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Sample records for semiconductors annual subcontract

  1. Annual Report: Photovoltaic Subcontract Program FY 1990

    Energy Technology Data Exchange (ETDEWEB)

    Summers, K. A. [Solar Energy Research Inst., Golden, CO (United States)

    1991-03-01

    This report summarizes the progress of the Photovoltaic (PV) Subcontract Program of the Solar Energy Research Institute (SERI) from October 1, 1989 through September 30, 1990. The PV Subcontract Program is responsible for managing the subcontracted portion of SERI's PV Advanced Research and Development Project. In fiscal year 1990, this included more than 54 subcontracts with a total annualized funding of approximately $11.9 million. Approximately two-thirds of the subcontracts were with universities at a total funding of nearly $3.3 million. The six technical sections of the report cover the main areas of the subcontract program: the Amorphous Silicon Research Project, Polycrystalline Thin Films, Crystalline Silicon Materials Research, High-Efficiency Concepts, the New Ideas Program, and the University Participation Program. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1990, and future research directions. Another section introduces the PVMaT project and reports on its progress.

  2. Photovoltaic Subcontract Program. Annual report, FY 1992

    Energy Technology Data Exchange (ETDEWEB)

    1993-03-01

    This report summarizes the fiscal year (FY) 1992 progress of the subcontracted photovoltaic (PV) research and development (R&D) performed under the Photovoltaic Advanced Research and Development Project at the National Renewable Energy Laboratory (NREL)-formerly the Solar Energy Research Institute (SERI). The mission of the national PV program is to develop PV technology for large-scale generation of economically competitive electric power in the United States. The technical sections of the report cover the main areas of the subcontract program: the Crystalline Materials and Advanced Concepts project, the Polycrystalline Thin Films project, Amorphous Silicon Research project, the Photovoltaic Manufacturing Technology (PVMaT) project, PV Module and System Performance and Engineering project, and the PV Analysis and Applications Development project. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1992, and future research directions.

  3. Annual Report: Photovoltaic Subcontract Program FY 1991

    Energy Technology Data Exchange (ETDEWEB)

    Summers, K. A. [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    1992-03-01

    This report summarizes the fiscal year (FY) 1991 (October 1, 1990, through September 30, 1991) progress of the subcontracted photovoltaic (PV) research and development (R&D) performed under the Photovoltaic Advanced Research and Development Project at the National Renewable Energy Laboratory (NREL)-formerly the Solar Energy Research Institute (SERI). The mission of the national PV program is to develop PV technology for large-scale generation of economically competitive electric power in the United States. The technical sections of the report cover the main areas of the subcontract program: the Amorphous Silicon Research Project, Polycrystalline Thin Films, Crystalline Silicon Materials Research, High Efficiency Concepts, the New Ideas Program, the University Participation Program, and the Photovoltaic Manufacturing Technology (PVMaT) project. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1991, and future research directions.

  4. Annual report 2014. Report on subcontracting within the AREVA group in France

    International Nuclear Information System (INIS)

    2015-07-01

    This report presents quantitative data and actions undertaken by the AREVA group regarding subcontracting in its nuclear activities in France in 2014. After a presentation of AREVA, it addresses innovative practices in the 'commissioner-supplier' relationship, describes how the subcontracting option corresponds to an industrial choice, describes how subcontracting is supervised through an operational acquisition process, how abilities and training of external interveners are controlled, how operations performed by external interveners are prepared and accompanied. It outlines how issues related to health, safety and security are addressed exactly the same way for all interveners, and finally comments how observations made by the different stakeholders are sources of progress

  5. Photovoltaic Subcontract Program, FY 1991. Annual report, [October 1, 1990--September 30, 1991

    Energy Technology Data Exchange (ETDEWEB)

    1992-03-01

    This report summarizes the fiscal year (FY) 1991 (October 1, 1990, through September 30, 1991) progress of the subcontracted photovoltaic (PV) research and development (R&D) performed under the Photovoltaic Advanced Research and Development Project at the National Renewable Energy Laboratory (NREL) -- formerly the Solar Energy Research Institute (SERI). The mission of the national PV program is to develop PV technology for large-scale generation of economically competitive electric power in the United States. The technical sections of the report cover the main areas of the subcontract program: the Amorphous Silicon Research Project, Polycrystalline Thin Films, Crystalline Silicon Materials Research, High-Efficiency Concepts, the New Ideas Program, the University Participation Program, and the Photovoltaic Manufacturing Technology (PVMaT) project. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1991, and future research directions.

  6. Photovoltaic manufacturing technology (PVMaT). Annual subcontract report, March 31, 1994--June 30, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Holley, W A [Springborn Labs., Inc., Enfield, CT (United States)

    1996-01-01

    This report describes work performed under a subcontract to the National Renewable Energy Laboratory under the Photovoltaic Manufacturing Technology Project. The objectives of this subcontract are to (1) define the problem of yellowing/browning of EVA-based encapsulants; (2) determine probable mechanisms and the role of various parameters such as heat, UV exposure, module construction, EVA interfaces, and EVA thickness, in the browning of EVA-based encapsulants; (3) develop stabilization strategies for various module constructions to protect the encapsulant from degradative failure; (4) conduct laboratory, accelerated outdoor, and field testing of encapsulant, laminated test coupons, and full modules to demonstrate the functional adequacy of the stabilization strategies; and (5) implement these strategies. This report summarizes the accomplishments related to the above goals for the reporting period.

  7. Photovoltaic Subcontract Program, FY 1990

    Energy Technology Data Exchange (ETDEWEB)

    Summers, K.A. (ed.)

    1991-03-01

    This report summarizes the progress of the subcontracted photovoltaic (PV) research and development (R D) performed under the Photovoltaics Program at the Solar Energy Research Institute (SERI). The SERI subcontracted PV research and development represents most of the subcontracted R D that is funded by the US Department of Energy (DOE) National Photovoltaics Program. This report covers fiscal year (FY) 1990: October 1, 1989 through September 30, 1990. During FY 1990, the SERI PV program started to implement a new DOE subcontract initiative, entitled the Photovoltaic Manufacturing Technology (PVMaT) Project.'' Excluding (PVMaT) because it was in a start-up phase, in FY 1990 there were 54 subcontracts with a total annualized funding of approximately $11.9 million. Approximately two-thirds of those subcontracts were with universities, at a total funding of over $3.3 million. Cost sharing by industry added another $4.3 million to that $11.9 million of SERI PV subcontracted R D. The six technical sections of this report cover the previously ongoing areas of the subcontracted program: the Amorphous Silicon Research Project, Polycrystalline Thin Films, Crystalline Silicon Materials Research, High-Efficiency Concepts, the New Ideas Program, and the University Participation Program. Technical summaries of each of the subcontracted programs discuss approaches, major accomplishments in FY 1990, and future research directions. Another section introduces the PVMaT project and reports the progress since its inception in FY 1990. Highlights of technology transfer activities are also reported.

  8. Defects and diffusion in semiconductors XIII an annual retrospective

    CERN Document Server

    Fisher, D J

    2011-01-01

    This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: ""Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide"" (D.Vaya, A.Jain, S.Lodha, V.K.Sharma, S.C.Ameta), ""Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles"" (M.Ragam, N.Sankar, K.Ramachandran), ""The Effect of a Light Impurity on the Elec

  9. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  10. 46 CFR Sec. 15 - Subcontracts.

    Science.gov (United States)

    2010-10-01

    ... REPAIRS UNDER NATIONAL SHIPPING AUTHORITY MASTER LUMP SUM REPAIR CONTRACT-NSA-LUMPSUMREP Sec. 15 Subcontracts. Under Article 29 of the NSA-LUMPSUMREP Contract, the Contractor is authorized to subcontract... 46 Shipping 8 2010-10-01 2010-10-01 false Subcontracts. Sec. 15 Section 15 Shipping MARITIME...

  11. Photovoltaic Subcontract Program

    Energy Technology Data Exchange (ETDEWEB)

    Surek, Thomas; Catalano, Anthony

    1993-03-01

    This report summarizes the fiscal year (FY) 1992 progress of the subcontracted photovoltaic (PV) research and development (R D) performed under the Photovoltaic Advanced Research and Development Project at the National Renewable Energy Laboratory (NREL)-formerly the Solar Energy Research Institute (SERI). The mission of the national PV program is to develop PV technology for large-scale generation of economically competitive electric power in the United States. The technical sections of the report cover the main areas of the subcontract program: the Crystalline Materials and Advanced Concepts project, the Polycrystalline Thin Films project, Amorphous Silicon Research project, the Photovoltaic Manufacturing Technology (PVMaT) project, PV Module and System Performance and Engineering project, and the PV Analysis and Applications Development project. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1992, and future research directions.

  12. Subcontracting Railway Maintenance

    DEFF Research Database (Denmark)

    Thommesen, Jacob

    2010-01-01

    railway infrastructure manager (InfraMan), whichis subcontracting maintenance tasks to other companies. InfraMan has implemented various central elements in managing their subcontractors. The latter are required to present a safety plan as part of their bid, they must be approved if they are to be awarded...

  13. Services Subcontract Technical Representative (STR) handbook

    International Nuclear Information System (INIS)

    Houston, D.H.

    1997-06-01

    The purpose of this handbook is to provide guidance to Bechtel Hanford, Inc. Subcontract Representatives in their assignments. It is the intention of this handbook to ensure that subcontract work is performed in accordance with the subcontract documents

  14. Development of an In-Line Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells: Annual Subcontract Report, June 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Sinton, R. A.

    2004-04-01

    Under the PV Manufacturing R&D subcontract''Development of an In-Line, Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells'', Sinton Consulting developed prototypes for several new instruments for use in the manufacture of silicon solar cells. These instruments are based on two families of R&D instruments that were previously available, an illumination vs. open-circuit-voltage technique and the quasi-steady state RF photoconductance technique for measuring minority-carrier lifetime. Compared to the previous instruments, the new prototypes are about 20 times faster per measurement, and have automated data analysis that does not require user intervention even when confronted by challenging cases. For example, un-passivated multi-crystalline wafers with large variations in lifetime and trapping behavior can be measured sequentially without error. Five instruments have been prototyped in this project to date, including a block tester for evaluating cast or HEM silicon blocks, a CZ ingot tester, an FZ boule tester for use with long-lifetime silicon, and an in-line sample head for measuring wafers. The CZ ingot tester and the FZ boule tester are already being used within industry and there is interest in the other prototypes. For each instrument, substantial R&D work was required in developing the device physics and analysis as well as for the hardware. This work has been documented in a series of application notes and conference publications, and will result in significant improvements for both the R&D and the industrial types of instruments.

  15. New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1990--31 July 1991

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O`Bradovich, G.J.; Young, M.P. [Purdue Univ., Lafayette, IN (United States)

    1993-01-01

    This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

  16. Specific PVMaT R and D in CdTe Product Manufacturing; Phase II Annual Subcontract Technical Report; May 1999--September 2000

    Energy Technology Data Exchange (ETDEWEB)

    McMaster, A. (First Solar, LLC)

    2001-01-22

    Just prior to the beginning of Phase II of the PVMaT project Solar Cells, Inc, (SCI) and True North Partners of Scottsdale, AZ, formed a joint venture partnership name First Solar, LLC. By the end of 1999, this event resulted in the construction of a new major manufacturing plant for photovoltaic modules, based on cadmium telluride, located in Perrysburg, a suburb of Toledo, Ohio. This plant was designed to be capable of producing PV modules at a rate of 100 MW per year within about three years. Significantly, a new semiconductor coating system, the heat of the production line, has already shown the capability of the 100 MW per year rate. These events have led to the expansion of the effort on the PVMaT project that included the former SCI team in Toledo, Ohio, a new team of engineering subcontractor, Product Search, Inc., and, later, a new laser team from First Solar, both from Scottsdale, Arizona. These three teams joined in a collaborative effort on Tasks 4: Manufacturing Line Improvements, on Task 5: Product Readiness, and on Task Environmental, Health, and Safety Issues. One Task 4 goal was to address the technical issues of the failed UL 1703 qualification testing in Phase I. Completing this goal, along with module lamination improvement done in Task 5, was instrumental in the design, fabrication, and installation of a high-throughput solar finishing line. The main components of this line, also a Task 4 project, were successfully tested in module finalization on the production line. Developing a novel, single-laser scribing system was another major accomplishment. In Task 5, the major activity was improved module lamination. Progress in Tasks 4 and 5 resulted in improved modules that were submitted for UL 1703 qualification testing. In March 2000, a new encapsulation process came under development, in which the back glass cover plate is substituted by a combination of a polymer layer as a dielectric and aluminum foil as a moisture barrier. The go al of the

  17. Photovoltaic Subcontract Program, FY 1991

    Energy Technology Data Exchange (ETDEWEB)

    1992-03-01

    This report summarizes the fiscal year (FY) 1991 (October 1, 1990, through September 30, 1991) progress of the subcontracted photovoltaic (PV) research and development (R D) performed under the Photovoltaic Advanced Research and Development Project at the National Renewable Energy Laboratory (NREL) -- formerly the Solar Energy Research Institute (SERI). The mission of the national PV program is to develop PV technology for large-scale generation of economically competitive electric power in the United States. The technical sections of the report cover the main areas of the subcontract program: the Amorphous Silicon Research Project, Polycrystalline Thin Films, Crystalline Silicon Materials Research, High-Efficiency Concepts, the New Ideas Program, the University Participation Program, and the Photovoltaic Manufacturing Technology (PVMaT) project. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1991, and future research directions.

  18. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 April 2002--30 September 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Shea, S. P.

    2004-04-01

    The goal of BP Solar's Crystalline PVMaT program is to improve the present polycrystalline silicon manufacturing facility to reduce cost, improve efficiency, and increase production capacity. Key components of the program are: increasing ingot size; improving ingot material quality; improving material handling; developing wire saws to slice 100 ..mu..m thick silicon wafers on 200 ..mu..m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100 ..mu..m thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50 MW (annual nominal capacity) green-field Mega plant factory model template based on this new thin polycrystalline silicon technology; and facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

  19. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 October 2003--30 September 2004

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Narayanan, M.

    2005-03-01

    The major objectives of this program are to continue the advancement of BP Solar polycrystalline silicon manufacturing technology. The program includes work in the following areas: Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations; developing wire saws to slice 100- m-thick silicon wafers on 290- m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100- m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology; facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

  20. A Model of Safe Subcontracting

    DEFF Research Database (Denmark)

    Thommesen, Jacob; Andersen, Henning Boje

    This report is an excerpt from Deliverable D1.4.1.3 of EU Project iNTeg-Risk. The model presented here is the result of Task 1.4.1 of the iNTeg-Risk project that addressed safety problems related to outsourcing and subcontracting of safety-critical tasks. Concerns have been raised over the effects...... of the fragmentation of work processes associated with subcontracting and outsourcing, where safety may be affected by heterogeneous safety cultures, distributed lines of responsibility, unclear ownership of safety responsibility, and sometimes lack of local knowledge or lack of core skills....

  1. 48 CFR 319.705-5 - Awards involving subcontracting plans.

    Science.gov (United States)

    2010-10-01

    ... SERVICES SOCIOECONOMIC PROGRAMS SMALL BUSINESS PROGRAMS Subcontracting With Small Business, Small Disadvantaged Business, and Women-Owned Small Business Concerns 319.705-5 Awards involving subcontracting plans...

  2. 48 CFR 2019.705-4 - Reviewing the subcontracting plan.

    Science.gov (United States)

    2010-10-01

    ... COMMISSION SOCIOECONOMIC PROGRAMS SMALL BUSINESS PROGRAMS Subcontracting With Small Business, Small Disadvantaged Business, and Women-Owned Small Business Concerns 2019.705-4 Reviewing the subcontracting plan...

  3. Subcontracting in nuclear industry - legal aspects

    International Nuclear Information System (INIS)

    Leger, M.

    2012-01-01

    This article describes the legal framework of subcontracting in France. Subcontracting is considered as a normal mode of functioning for an enterprise: an enterprise contracts another enterprise to do what it can not do itself or does not want to do. According to the 1975 law, cascade subcontracting is allowed but subcontractors have to be accepted by the payer. In some cases the payer can share responsibility when the subcontracting enterprises do not comply to obligations like the payment of some taxes. The main subcontractor who is the one who contracted with the payer is the only one responsible for the right execution of the whole contract. In nuclear industry there are 2 exceptions to the freedom of subcontracting. The first one concerns radiation protection: in a nuclear facility the person in charge of radioprotection must be chosen among the staff. The second concerns the operations and activities that are considered important for radiation protection, it is forbidden to subcontract them. In some cases like maintenance in nuclear sector the law imposes some qualification certification for subcontracting enterprises. The end of the article challenges the common belief about subcontracting in nuclear industry. (A.C.)

  4. 78 FR 59798 - Small Business Subcontracting: Correction

    Science.gov (United States)

    2013-09-30

    ... SMALL BUSINESS ADMINISTRATION 13 CFR Part 125 RIN 3245-AG22 Small Business Subcontracting: Correction AGENCY: U.S. Small Business Administration. ACTION: Correcting amendments. SUMMARY: This document... business subcontracting to implement provisions of the Small Business Jobs Act of 2010. This correction...

  5. 76 FR 61626 - Small Business Subcontracting

    Science.gov (United States)

    2011-10-05

    ... SMALL BUSINESS ADMINISTRATION 13 CFR Parts 121 and 125 RIN 3245-AG22 Small Business Subcontracting AGENCY: U.S. Small Business Administration. ACTION: Proposed rule. SUMMARY: The U.S. Small Business... Business Jobs Act of 2010, which pertain to small business subcontracting. SBA is proposing to amend its...

  6. SETEC/Semiconductor Manufacturing Technologies Program: 1999 Annual and Final Report

    Energy Technology Data Exchange (ETDEWEB)

    MCBRAYER,JOHN D.

    2000-12-01

    This report summarizes the results of work conducted by the Semiconductor Manufacturing Technologies Program at Sandia National Laboratories (Sandia) during 1999. This work was performed by one working group: the Semiconductor Equipment Technology Center (SETEC). The group's projects included Numerical/Experimental Characterization of the Growth of Single-Crystal Calcium Fluoride (CaF{sub 2}); The Use of High-Resolution Transmission Electron Microscopy (HRTEM) Imaging for Certifying Critical-Dimension Reference Materials Fabricated with Silicon Micromachining; Assembly Test Chip for Flip Chip on Board; Plasma Mechanism Validation: Modeling and Experimentation; and Model-Based Reduction of Contamination in Gate-Quality Nitride Reactor. During 1999, all projects focused on meeting customer needs in a timely manner and ensuring that projects were aligned with the goals of the National Technology Roadmap for Semiconductors sponsored by the Semiconductor Industry Association and with Sandia's defense mission. This report also provides a short history of the Sandia/SEMATECH relationship and a brief on all projects completed during the seven years of the program.

  7. Photooxidation of organic wastes using semiconductor nanoclusters. 1998 annual progress report

    International Nuclear Information System (INIS)

    Wilcoxon, J.P.

    1998-01-01

    'This report summarizes work after 1.5 years of a 3-year project. The authors efforts have focused on demonstration of photocatalysis of organic pollutants using nanosize MoS 2 . They investigated the effects of (1) bandgap, valence and conduction band energies; (2) surface modification of MoS 2 by deposition of metal and metal oxide islands to enhance electron transfer; and (3) use of semi-conductor semi-conductor composites to achieve improved charge separation and thus photooxidation of pollutants. They synthesized and studied nanosize MoS 2 of three different sizes and associated bandgaps and studied photoredox reactions of nanosize MoS 2 dispersed in solution and supported on a macroscopic powder. The latter would be the method of choice for use as a practical photocatalyst for water purification. As they emphasized in the original proposal, MoS 2 in nanosize form can be tuned to absorb various amounts of the solar spectrum. They discovered there is an optimal choice of absorbance characteristics and valence and conduction band levels which allow the rapid photo-oxidation of a chosen organic molecule. The advantages of having a photostable material with a tunable bandgap were demonstrated in an experiment where phenol destruction with visible (> 450 nm) light occurred at a dramatically faster rate with nanoscale MoS 2 catalysts compared to the best available previous material TiO 2 . This was the first demonstration of rapid photooxidation of an organic molecule using a completely photostable catalyst and only visible light. The possibility of transferring electrons or holes between nanoscale MoS 2 and other semiconductor materials in order to increase electron/hole lifetimes were explored. It was shown that small amounts ( 2 deposited on to TiO 2 can lead to significant (∼2) enhancements of phenol destruction rates. A number of different chemicals were photocatalyzed sucessfully to CO 2 , but most of the work centered on the destruction of phenol. This

  8. Small Business Subcontracting Report Validation Can Be Improved

    National Research Council Canada - National Science Library

    Bond, Christopher

    2001-01-01

    ..., and evaluating accounting systems as well as management support of the subcontracting program. These assessments have found that most contractors that were reviewed are making good faith efforts to comply with their subcontracting plans...

  9. 48 CFR 219.704 - Subcontracting plan requirements.

    Science.gov (United States)

    2010-10-01

    ... business firms specifically identified in the subcontracting plan. Notifications shall be in writing and... SYSTEM, DEPARTMENT OF DEFENSE SOCIOECONOMIC PROGRAMS SMALL BUSINESS PROGRAMS The Small Business... business concerns shall include subcontracts with historically black colleges and universities and minority...

  10. FIDIC Conditions of Subcontract as a Model for General Conditions of Subcontract in Pakistan

    Directory of Open Access Journals (Sweden)

    Muhammad Umer Zubair

    2016-12-01

    Full Text Available Fair allocation of risks in conditions of contract is pivotal for coordination, unhindered execution, dispute resolution and maintenance of positive relationship among the parties executing the contract. Pakistani construction industry despite subcontracting a large percentage of construction projects lacks standard conditions of subcontract and they are primarily based on the will of the prime contractor that is onerous for the subcontractor. Therefore in order to develop a model for the general conditions of subcontract in Pakistan the conditions proposed by Associated General Contractors of California, FIDIC in 1994 and 2011, Construction Industry Development Board Malaysia, American Institute of Architects and by the Government of Hong Kong were compared to determine the similarities and differences among them. Afterwards a questionnaire based on the significant provisions of these subcontracts was conducted in the construction industry of Pakistan to determine the appropriate conditions for model subcontract. The results of the survey were further subjected to discussions with the legal experts. Out of 35 suggestions made for the general conditions of subcontract 23 originated from FIDIC in which 20 are recommended by its 2011’s version. It can therefore be implemented in Pakistan with certain amendments and additions as proposed in light of conditions of other subcontracts and the results of the survey and discussions with legal experts.

  11. 48 CFR 1052.219-71 - Subcontracting Plan.

    Science.gov (United States)

    2010-10-01

    ... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Subcontracting Plan. 1052... Subcontracting Plan. As prescribed in DTAR 1019.708-70(b), insert the following provision: Subcontracting Plan (MAR 2002) As part of its initial proposal, each large business offeror must submit a contracting plan...

  12. 48 CFR 1852.219-73 - Small business subcontracting plan.

    Science.gov (United States)

    2010-10-01

    ... Provisions and Clauses 1852.219-73 Small business subcontracting plan. As prescribed in 1819.708-70(a), insert the following provision: Small Business Subcontracting Plan (MAY 1999) (a) This provision is not... contain FAR clause 52.219-9, “Small Business Subcontracting Plan.” The apparent low bidder must submit the...

  13. 29 CFR 4.114 - Subcontracts.

    Science.gov (United States)

    2010-07-01

    ... Secretary of Labor LABOR STANDARDS FOR FEDERAL SERVICE CONTRACTS Application of the McNamara-O'Hara Service Contract Act Covered Contracts Generally § 4.114 Subcontracts. (a) “Contractor” as including “subcontractor... contractor undertakes a contract subject to the Act, the contractor agrees to assume the obligation that the...

  14. Final Report for Subcontract B539681

    International Nuclear Information System (INIS)

    McLean, H.

    2009-01-01

    This report summarizes the work performed under subcontract B539681. The scope of work described in the subcontract encompasses studies of fundamental research for fast ignition. The work statement from the from the original subcontract and the subsequent extension can be summarized in three major components: modeling of electron transport in experimental targets, development of diagnostics, and experimental implementation and analysis. All three of these areas have been addressed during the subcontract period, although the tasks detailed in the original subcontract were adapted to research conditions with guidance from the technical contact. The work performed in each of these areas is described. (1) Modeling of electron transport in experimental targets - Electron transport and x-ray generation in experimental targets were modeled with the Monte Carlo code Integrated Tiger Series 3.0 (ITS 3.0). This code package was also used to model the response of Bremsstrahlung spectrometer described in the paper. The modeling helped with target and spectrometer designs and was also used to interpret the measured data from the experiments. this work is coupled to the diagnostic development and experimental analysis and is described in the deliverable of the report. (2) Diagnostic Development - During the subcontract period a filter-stack Bremsstrahlung spectrometer using image plate dosimeters was developed, tested, and calibrated. The spectrometer design and sample data taken with the spectrometer was presented at the High Temperature Plasma Diagnostics conference (Albuquerque, NM 2008). The information was also subsequently published in the peer-reviewed conference proceedings (rev. Sci. Instrum. 79:10E305 (2008)). The diagnostic was fielded on over 10 experiments at the Jupiter Laser Facility at Lawrence Livermore and was also adapted for use on OMEGA EP, was discussed in the subcontract extension. A composition study of the image plate dosimeters was also disseminated as

  15. Photovoltaic Program Branch annual report, FY 1989

    Energy Technology Data Exchange (ETDEWEB)

    Summers, K A [ed.

    1990-03-01

    This report summarizes the progress of the Photovoltaic (PV) Program Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30, 1989. The branch is responsible for managing the subcontracted portion of SERI's PV Advanced Research and Development Project. In fiscal year (FY) 1989, this included nearly 50 subcontracts, with a total annualized funding of approximately $13.1 million. Approximately two-thirds of the subcontracts were with universities, at a total funding of nearly $4 million. The six technical sections of the report cover the main areas of the subcontracted program: Amorphous Silicon Research, Polycrystalline Thin Films, Crystalline Silicon Materials Research, High-Efficiency Concepts, New Ideas, and University Participation. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1989, and future research directions. Each report will be cataloged individually.

  16. 48 CFR 49.606 - Granting subcontract settlement authorization.

    Science.gov (United States)

    2010-10-01

    ...-furnished material or articles completed but undelivered under the subcontract or purchase order, as these... articles may be disposed of without Government approval or screening if the total amount (at subcontract... retention or other disposal of termination inventory allocated to the settlement proposal. (ii) Deduct...

  17. Sub-Contracting in Rural Areas of Thailand

    OpenAIRE

    Mead, Donald C.

    1982-01-01

    This paper describes an arrangement where a producer undertakes certain steps in the production process done by individuals working in their own homes in Thailand. The paper also provides a description of how this system operates in four different industries, presents survey data on people engaged in subcontracting work, evaluates the subcontracting system, and determines the advantages and disadvantages of its operation.

  18. 48 CFR 35.009 - Subcontracting research and development effort.

    Science.gov (United States)

    2010-10-01

    ... ACQUISITION REGULATION SPECIAL CATEGORIES OF CONTRACTING RESEARCH AND DEVELOPMENT CONTRACTING 35.009 Subcontracting research and development effort. Since the selection of R&D contractors is substantially based on... 48 Federal Acquisition Regulations System 1 2010-10-01 2010-10-01 false Subcontracting research...

  19. 48 CFR 15.404-3 - Subcontract pricing considerations.

    Science.gov (United States)

    2010-10-01

    ... CONTRACTING METHODS AND CONTRACT TYPES CONTRACTING BY NEGOTIATION Contract Pricing 15.404-3 Subcontract pricing considerations. (a) The contracting officer is responsible for the determination of a fair and... 48 Federal Acquisition Regulations System 1 2010-10-01 2010-10-01 false Subcontract pricing...

  20. 48 CFR 52.219-9 - Small business subcontracting plan.

    Science.gov (United States)

    2010-10-01

    ... Clauses 52.219-9 Small business subcontracting plan. As prescribed in 19.708(b), insert the following clause: Small Business Subcontracting Plan (OCT 2010) (a) This clause does not apply to small business... business, and women-owned small business concerns. If the offeror is submitting an individual contract plan...

  1. The nexus between OSH and subcontracting.

    Science.gov (United States)

    Nunes, Isabel L

    2012-01-01

    Subcontracting of specialized functions to external companies (e.g. cleaning or maintenance) is actually very common within several industries. These external companies' are called contractors and their contracting is often designated as outsourcing. Frequently contractors involve other companies (the sub-contractors) to assist them in fulfilling the contract, resulting in a complex chain of organizations focused on interchange of work - the contracting chain. Therefore in the same work site can coexist workers form the client-company and workers from the contractors and/or subcontractors. Since contractors perform their job in client's facilities, they can be exposed to hazards that are unknown to them. On other hand, workers of the client company can also be exposed to hazardous situations derived from the work performed by the contractors. The paper discusses how adequate occupational safety and health conditions can be assured when dealing with this kind of dynamic labor networks. Two case-studies and several examples coming from international literature will be presented.

  2. Companies Participating in the Department of Defense Subcontracting Program: First Half Fiscal Year 1997

    National Research Council Canada - National Science Library

    1997-01-01

    ...). Public Law (P.L.) 95-507, as amended requires that these contractors establish a small business subcontracting program and report to DoD semiannually, using standard 295, on subcontract awards. As required by P.I...

  3. 42 CFR 434.6 - General requirements for all contracts and subcontracts.

    Science.gov (United States)

    2010-10-01

    ... appropriate to the service or activity delegated under the subcontract. (c) Continued responsibility of contractor. No subcontract terminates the legal responsibility of the contractor to the agency to assure that...

  4. 25 CFR 900.49 - What procurement standards apply to subcontracts?

    Science.gov (United States)

    2010-04-01

    ... ASSISTANCE ACT Standards for Tribal or Tribal Organization Management Systems Procurement Management System Standards § 900.49 What procurement standards apply to subcontracts? Each subcontract entered into under the... 25 Indians 2 2010-04-01 2010-04-01 false What procurement standards apply to subcontracts? 900.49...

  5. 48 CFR 552.219-72 - Preparation, Submission, and Negotiation of Subcontracting Plans.

    Science.gov (United States)

    2010-10-01

    ..., and Negotiation of Subcontracting Plans. 552.219-72 Section 552.219-72 Federal Acquisition Regulations... Text of Provisions and Clauses 552.219-72 Preparation, Submission, and Negotiation of Subcontracting... Negotiation of Subcontracting Plans (JUN 2005) (a) An offeror, other than a small business concern, submitting...

  6. 48 CFR 2452.219-70 - Small business subcontracting plan compliance.

    Science.gov (United States)

    2010-10-01

    ... of Provisions and Clauses 2452.219-70 Small business subcontracting plan compliance. As prescribed in 2419.708(d), insert the following provision: Small Business Subcontracting Plan Compliance (FEB 2006... the clause at FAR 52.219-9, Small Business Subcontracting Plan. (c) The government will consider...

  7. Forecast of contracting and subcontracting opportunities: Fiscal year 1998

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-01-01

    This report describes procurement procedures and opportunities for small businesses with the Department of Energy (DOE). It describes both prime and subcontracting opportunities of $100,000 and above which are being set aside for 8(a) and other small business concerns. The report contains sections on: SIC codes; procurement opportunities with headquarters offices; procurement opportunities with field offices; subcontracting opportunities with major contractors; 8(a) contracts expiring in FY 1998; other opportunities to do business with DOE; management and operating contractors--expiration dates; Office of Small and Disadvantaged Business Utilization (OSDBU) staff directory; and small business survey. This document will be updated quarterly on the home page.

  8. 48 CFR 52.222-11 - Subcontracts (Labor Standards).

    Science.gov (United States)

    2010-10-01

    ...: Subcontracts (Labor Standards) (JUL 2005) (a) Definition. Construction, alteration or repair, as used in this... dedicated to the construction of the building or work and is deemed part of the site of the work within the meaning of paragraph (2) of the “site of work” definition; and (5) Transportation of portions of the...

  9. 48 CFR 52.244-6 - Subcontracts for Commercial Items.

    Science.gov (United States)

    2010-10-01

    ... clauses in subcontracts for commercial items: (i) 52.203-13, Contractor Code of Business Ethics and.... (e) To the maximum extent practicable, when the Contractor acts as a purchasing agent for the Government with respect to a purchase that exceeds the simplified acquisition threshold, the Contractor shall...

  10. 77 FR 29983 - Federal Acquisition Regulation; Information Collection; Subcontract Consent

    Science.gov (United States)

    2012-05-21

    ... performance of functions of the Federal Acquisition Regulation (FAR), and whether it will have practical... The objective of consent to subcontract, as discussed in FAR Part 44, is to evaluate the efficiency and effectiveness with which the contractor spends Government funds, and complies with Government...

  11. 48 CFR 5.206 - Notices of subcontracting opportunities.

    Science.gov (United States)

    2010-10-01

    ... subcontracts, to increase participation by qualified HUBZone small business, small, small disadvantaged, women-owned small business, veteran-owned small business and service-disabled veteran-owned small business.... (b) The notices must describe— (1) The business opportunity; (2) Any prequalification requirements...

  12. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  13. The NASA Plan: To award eight percent of prime and subcontracts to socially and economically disadvantaged businesses

    Science.gov (United States)

    1990-01-01

    It is NASA's intent to provide small disadvantaged businesses, including women-owned, historically black colleges and universities and minority education institutions the maximum practicable opportunity to receive a fair proportion of NASA prime and subcontracted awards. Annually, NASA will establish socioeconomic procurement goals including small disadvantaged business goals, with a target of reaching the eight percent level by the end of FY 1994. The NASA Associate Administrators, who are responsible for the programs at the various NASA Centers, will be held accountable for full implementation of the socioeconomic procurement plans. Various aspects of this plan, including its history, are discussed.

  14. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  15. Transferring the Cost of Wage Rigidity to Subcontracting Firms: The Case of Korea

    Directory of Open Access Journals (Sweden)

    Kwangho Woo

    2016-08-01

    Full Text Available We select a Korean case with ample subcontracting practices and a rigid wage system. Workplaces with subcontract transactions would have reason to impute the additional wage incremental costs associated with the seniority-based wage system (Hobong in Korea to subcontractors. Our empirical results identify the cost-transferring mechanism under which the cost of wage rigidity for contractors is transferred to subcontracting firms and aggravates the wage inequality among workers in contracting and subcontracting firms. We analyze the industrial difference in the intensity of this transferring mechanism and probe policy directions considering the improvement of both the subcontracting structure and pay system simultaneously. For the sustainability of firms, they need to reform a seniority-based wage system, an incentive-based wage system or a job-based wage system and the exploited subcontracting structure for creating share value.

  16. 48 CFR 225.872-8 - Subcontracting with qualifying country sources.

    Science.gov (United States)

    2010-10-01

    ... security interest reasons, mobilization base considerations, or applicable U.S. laws or regulations (see... contractor subcontracting procedures, the contracting officer shall ensure that the contract does not...

  17. 48 CFR 2019.705 - Responsibilities of the contracting officer under the subcontracting assistance program.

    Science.gov (United States)

    2010-10-01

    ... Regulations System NUCLEAR REGULATORY COMMISSION SOCIOECONOMIC PROGRAMS SMALL BUSINESS PROGRAMS Subcontracting With Small Business, Small Disadvantaged Business, and Women-Owned Small Business Concerns 2019.705...

  18. 48 CFR 319.705 - Responsibilities of the Contracting Officer under the subcontracting assistance program.

    Science.gov (United States)

    2010-10-01

    ... Regulations System HEALTH AND HUMAN SERVICES SOCIOECONOMIC PROGRAMS SMALL BUSINESS PROGRAMS Subcontracting With Small Business, Small Disadvantaged Business, and Women-Owned Small Business Concerns 319.705...

  19. 48 CFR 3019.705 - Responsibilities for the contracting officer under the subcontracting program.

    Science.gov (United States)

    2010-10-01

    ... Regulations System DEPARTMENT OF HOMELAND SECURITY, HOMELAND SECURITY ACQUISITION REGULATION (HSAR) SOCIOECONOMIC PROGRAMS SMALL BUSINESS PROGRAMS The Small Business Subcontracting Program 3019.705...

  20. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  1. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  2. 48 CFR 852.219-9 - VA Small business subcontracting plan minimum requirements.

    Science.gov (United States)

    2010-10-01

    ... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false VA Small business... Provisions and Clauses 852.219-9 VA Small business subcontracting plan minimum requirements. As prescribed in subpart 819.709, insert the following clause: VA Small Business Subcontracting Plan Minimum Requirements...

  3. 13 CFR 126.701 - Can these subcontracting percentages requirements change?

    Science.gov (United States)

    2010-01-01

    ... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Can these subcontracting percentages requirements change? 126.701 Section 126.701 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION HUBZONE PROGRAM Contract Performance Requirements § 126.701 Can these subcontracting percentages...

  4. Tri-State Synfuels Project Review: Volume 9A. Subcontract information. [Proposed Henderson, Kentucky coal to gasoline plant; water supply and civil engineering subcontracts

    Energy Technology Data Exchange (ETDEWEB)

    1982-06-01

    Volume 9A considers subcontract work done at the site involving hydrogeological studies with respect to water supply and geotechnical work with respect to the building foundations necessary based on boreholes drilled and the lithology of the area. (LTN)

  5. Construction Tender Subcontract Selection using Case-based Reasoning

    Directory of Open Access Journals (Sweden)

    Due Luu

    2012-11-01

    Full Text Available Obtaining competitive quotations from suitably qualified subcontractors at tender tim n significantly increase the chance of w1nmng a construction project. Amidst an increasingly growing trend to subcontracting in Australia, selecting appropriate subcontractors for a construction project can be a daunting task requiring the analysis of complex and dynamic criteria such as past performance, suitable experience, track record of competitive pricing, financial stability and so on. Subcontractor selection is plagued with uncertainty and vagueness and these conditions are difficul_t o represent in generalised sets of rules. DeciSIOns pertaining to the selection of subcontr:act?s tender time are usually based on the mtu1t1onand past experience of construction estimators. Case-based reasoning (CBR may be an appropriate method of addressing the chal_lenges of selecting subcontractors because CBR 1s able to harness the experiential knowledge of practitioners. This paper reviews the practicality and suitability of a CBR approach for subcontractor tender selection through the development of a prototype CBR procurement advisory system. In this system, subcontractor selection cases are represented by a set of attributes elicited from experienced construction estimators. The results indicate that CBR can enhance the appropriateness of the selection of subcontractors for construction projects.

  6. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  7. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  8. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  9. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  10. 105-N Basin sediment removal subcontract acquisition strategy plan

    International Nuclear Information System (INIS)

    Wilsey, D.J.

    1997-01-01

    The 105-N Basin Sediment Removal Subcontract Acquisition Strategy Plan provides a detailed set of actions to specify and procure services and equipment for removal of approximately 400 ft 3 (wet) of radioactive sediment. The plan outlines a cost-effective approach to remove this sediment safely and within an aggressive schedule. This 105-N Basin Sediment Removal Strategy Plan includes the following key elements: a current vendor survey of capabilities and interest in this type of work, confirming that qualified, competitive sources are available, and in the time frame required; a systematic review of the various options for sediment disposal in enough detail to exhaustively uncover pros and cons of each approach; use of a workshop approach to assess different ways to accomplish the work and ensure the disposal options considered are cost and schedule effective; integration of the complicated sampling and characterization process, which is essential to successful execution of the procurement scheme; review of the various subcontracting options to maximize the use of existing technology, existing equipment, and specialized expertise; detailed early planning and strategizing for early identification of problems that can be solved early before they become restraints or potential added costs; tailored design schedule to cover three alternate approaches so that sample characterization will not delay engineering preparation for disposal; support required from various organizations onsite as well as subcontractors, well in advance of the need for that support, improving availability of the proper personnel to support schedule and cost objectives; and provides the possible opportunity to process the sediment in the valve pit and pump pit through this same subcontractor's process

  11. 48 CFR 1419.705-2 - Determining the need for a subcontracting plan.

    Science.gov (United States)

    2010-10-01

    ... INTERIOR SOCIOECONOMIC PROGRAMS SMALL BUSINESS PROGRAMS The Small Business Subcontracting Program 1419.705... possibilities exist for a proposed contractual action shall be reviewed by the BUDS prior to the approval by a...

  12. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  13. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  14. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  15. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  16. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  17. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  18. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  19. 48 CFR 212.504 - Applicability of certain laws to subcontracts for the acquisition of commercial items.

    Science.gov (United States)

    2010-10-01

    ... laws to subcontracts for the acquisition of commercial items. 212.504 Section 212.504 Federal... PLANNING ACQUISITION OF COMMERCIAL ITEMS Applicability of Certain Laws to the Acquisition of Commercial Items 212.504 Applicability of certain laws to subcontracts for the acquisition of commercial items. (a...

  20. 48 CFR 12.504 - Applicability of certain laws to subcontracts for the acquisition of commercial items.

    Science.gov (United States)

    2010-10-01

    ... laws to subcontracts for the acquisition of commercial items. 12.504 Section 12.504 Federal Acquisition... Applicability of Certain Laws to the Acquisition of Commercial Items and Commercially Available Off-The-Shelf Items 12.504 Applicability of certain laws to subcontracts for the acquisition of commercial items. (a...

  1. 75 FR 34260 - Federal Acquisition Regulation; FAR Case 2005-040, Electronic Subcontracting Reporting System (eSRS)

    Science.gov (United States)

    2010-06-16

    ... plan. Failure to submit or late submission of reports shall be a breach of contract and will be...)(2) of FAR clause 52.219-9 already addresses the breach of contract issue when the contractor or... Form 294 - Subcontract Report for Individual Contracts and Standard Form 295 - Summary Subcontract...

  2. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  3. Two cases of methyl alcohol intoxication by sub-chronic inhalation and dermal exposure during aluminum CNC cutting in a small-sized subcontracted factory.

    Science.gov (United States)

    Ryu, Jia; Lim, Key Hwan; Ryu, Dong-Ryeol; Lee, Hyang Woon; Yun, Ji Young; Kim, Seoung-Wook; Kim, Ji-Hoon; Jung-Choi, Kyunghee; Kim, Hyunjoo

    2016-01-01

    Methyl alcohol poisoning has been mainly reported in community. Two cases of methyl alcohol poisoning occurred in a small-sized subcontracted factory which manufactured smartphone parts in Korea. One young female patient presented with dyspnea and visual disturbance. Another young male patient presented with visual disturbance and myalgia. They treated with sodium bicarbonate infusion and hemodialysis for metabolic acidosis. In addition, he received ethyl alcohol per oral treatment. Her and his urinary methyl alcohol concentration was detected as 7.632 mg/L, 46.8 mg/L, respectively, although they were treated hemodialysis. Results of the working environment measurement showed that the concentration of methyl alcohol (1030.1-2220.5 ppm) in the air exceeded the time weighted average (200 ppm). They were diagnosed with optic neuropathy due to methyl alcohol poisoning and still have visual impairment. Workers who hired as dispatched employees in a small-sized subcontracted factory were exposed to high concentrations of methyl alcohol. The workplace had poor ventilation system. In addition, workers did not wear proper personal protect equipment. Working environment measurement and annual chekups for workers were not performed. They were in a blind spot to occupational safety and health. More attention is needed to protect vulnerable workers' health.

  4. R&D cooperation versus R&D subcontracting: empirical evidence from French survey data.

    OpenAIRE

    Estelle Dhont-Peltrault; Etienne Pfister

    2007-01-01

    This paper uses a survey of French firms active in R&D to identify the determinants of R&D outsourcing and of the ensuing trade-off between R&D subcontracting and R&D cooperation. Internal R&D expenditures increase both the probability of outsourcing and the number of R&D partners. Investment in fundamental R&D, group belonging, and the sector’s high R&D intensity positively influences the probability of R&D outsourcing but have less impact on the number of partners. R&D subcontracting is mor...

  5. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  6. 48 CFR 52.219-16 - Liquidated Damages-Subcontracting Plan.

    Science.gov (United States)

    2010-10-01

    ... following clause: Liquidated Damages—Subcontracting Plan (JAN 1999) (a) Failure to make a good faith effort... has failed to make such good faith effort, the Contracting Officer shall give the Contractor written notice specifying the failure and permitting the Contractor to demonstrate what good faith efforts have...

  7. 48 CFR 252.219-7004 - Small business subcontracting plan (test program).

    Science.gov (United States)

    2010-10-01

    ... 48 Federal Acquisition Regulations System 3 2010-10-01 2010-10-01 false Small business... AND CONTRACT CLAUSES Text of Provisions And Clauses 252.219-7004 Small business subcontracting plan (test program). As prescribed in 219.708(b)(1)(B), use the following clause: Small Business...

  8. 48 CFR 252.219-7003 - Small business subcontracting plan (DoD contracts).

    Science.gov (United States)

    2010-10-01

    ... 48 Federal Acquisition Regulations System 3 2010-10-01 2010-10-01 false Small business... AND CONTRACT CLAUSES Text of Provisions And Clauses 252.219-7003 Small business subcontracting plan (DoD contracts). As prescribed in 219.708(b)(1)(A), use the following clause: Small Business...

  9. 75 FR 65439 - Defense Federal Acquisition Regulation Supplement; Electronic Subcontracting Reporting System

    Science.gov (United States)

    2010-10-25

    ... Accounting Service or Missile Defense Agency. (2) For DoD, the authority to acknowledge receipt or reject... DEPARTMENT OF DEFENSE Defense Acquisition Regulations System 48 CFR Parts 219 and 252 [DFARS Case 2009-D002] Defense Federal Acquisition Regulation Supplement; Electronic Subcontracting Reporting...

  10. The Creation of a Permanent Establishment Through the Use of Subcontracting

    DEFF Research Database (Denmark)

    Schmidt, Peter Koerver

    2018-01-01

    In a recent Danish decision, the National Tax Board found that a foreign company should be considered to have a permanent establishment in Denmark, despite the fact that the foreign company had subcontracted all its activities in Denmark to an independent third party. This contribution critically...

  11. 48 CFR 226.370-8 - Goals and incentives for subcontracting with HBCU/MIs.

    Science.gov (United States)

    2010-10-01

    ... 48 Federal Acquisition Regulations System 3 2010-10-01 2010-10-01 false Goals and incentives for subcontracting with HBCU/MIs. 226.370-8 Section 226.370-8 Federal Acquisition Regulations System DEFENSE ACQUISITION REGULATIONS SYSTEM, DEPARTMENT OF DEFENSE SOCIOECONOMIC PROGRAMS OTHER SOCIOECONOMIC PROGRAMS Historically Black Colleges and...

  12. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  13. A case study of cost-efficient staffing under annualized hours.

    Science.gov (United States)

    van der Veen, Egbert; Hans, Erwin W; Veltman, Bart; Berrevoets, Leo M; Berden, Hubert J J M

    2015-09-01

    We propose a mathematical programming formulation that incorporates annualized hours and shows to be very flexible with regard to modeling various contract types. The objective of our model is to minimize salary cost, thereby covering workforce demand, and using annualized hours. Our model is able to address various business questions regarding tactical workforce planning problems, e.g., with regard to annualized hours, subcontracting, and vacation planning. In a case study for a Dutch hospital two of these business questions are addressed, and we demonstrate that applying annualized hours potentially saves up to 5.2% in personnel wages annually.

  14. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  15. Uranium Mill Tailings Remedial Action Project (UMTRAP), Slick Rock, Colorado, Revision 1. Bid schedule, special conditions, specifications, and subcontract drawings

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-10-01

    This volume contains: bidding requirements; terms and conditions; specifications for Division 1 -- general requirements; specifications for Division 2 -- sitework; specifications for Divisions 5 -- metals; subcontract drawings, (general, Union Carbide processing site, North Continent processing site, and Burro Canyon disposal site).

  16. 13 CFR 121.410 - What are the size standards for SBA's Section 8(d) Subcontracting Program?

    Science.gov (United States)

    2010-01-01

    ... Size Eligibility Requirements for Government Procurement § 121.410 What are the size standards for SBA... Small Business Act, a concern is small for subcontracts which relate to Government procurements if it...

  17. Uranium Mill Tailings Remedial Action Project (UMTRAP), Slick Rock, Colorado, Revision 1. Bid schedule, special conditions, specifications, and subcontract drawings

    International Nuclear Information System (INIS)

    1995-01-01

    This volume contains: bidding requirements; terms and conditions; specifications for Division 1 -- general requirements; specifications for Division 2 -- sitework; specifications for Divisions 5 -- metals; subcontract drawings, (general, Union Carbide processing site, North Continent processing site, and Burro Canyon disposal site)

  18. Poor Government Oversight of Anham and Its Subcontracting Procedures Allowed Questionable Costs To Go Undetected

    Science.gov (United States)

    2011-07-30

    contractor purchasing system review of Anham. Management Comments and Audit Response The Defense Contract Mangement Agency and the U.S. Central... Introduction 1  Background 1  Government Agency Roles and Oversight Responsibilities 4  Objectives 7  Weak Government Oversight Resulted in Significant...Subcontracting Procedures Allowed Questionable Costs To Go Undetected SIGIR 11-022 July 30, 2011 Introduction Since 2003, the United States Government

  19. A solar regenerative thermoelectrochemical converter (RTEC). Executive summary of final subcontract report

    Energy Technology Data Exchange (ETDEWEB)

    Townsend, C.W.; McHardy, J. [Hughes Aircraft Co., El Segundo, CA (United States)

    1992-02-01

    This is an executive summary of a final subcontract report that describes the successful completion of a closed-loop demonstration of a regenerative thermoelectromechanical device using solar heat input for the production of electricity. The full report, which contains a detailed description of the two-year effort, is currently subject to a government secrecy order which precludes public release of the information. Copies of the full report will be made available for general release whenever the secrecy order is lifted.

  20. Security of payment in Malaysian construction industry: issues on sub-contract's direct payment

    OpenAIRE

    Supardi, Azizan; Adnan, Hamimah

    2011-01-01

    In Malaysia, sub-contractors have to bear with the current structure of payment mechanisms in the standard forms of contract, which are payment upon certification, direct payment from the employer, and contingent or conditional payment. However, „direct payment‟ provision is applied for in most of the nominated sub-contracts and not to the domestic sub-contractors; thus the Construction Industry Payment and Adjudication (CIPA) Act is proposed. This paper, though, is to disclose the findings o...

  1. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  2. Final Report on the Audit of Subcontract Prices on Firm-Fixed-Price Contracts Awarded to McDonnell Aircraft Company

    Science.gov (United States)

    1990-12-03

    This is our final report on the audit of Subcontract Prices on Firm-Fixed-Price Contracts Awarded to McDonnell Aircraft Company (MCAIR). The Contract Management Directorate made the audit from October 1989 through June 1990. The objective of the audit was to compare proposed and negotiated subcontract prices and determine reasons for significant variances. We also evaluated applicable internal control procedures. For a 6-month period ending December 1989, MCAIR issued 517 subcontracts valued at $679 million.

  3. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  4. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  5. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  6. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  7. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  8. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  9. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  10. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  11. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  12. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  13. 2 CFR 801.220 - What contracts and subcontracts, in addition to those listed in 2 CFR 180.220, are covered...

    Science.gov (United States)

    2010-01-01

    ... 2 Grants and Agreements 1 2010-01-01 2010-01-01 false What contracts and subcontracts, in addition to those listed in 2 CFR 180.220, are covered transactions? 801.220 Section 801.220 Grants and... DEBARMENT AND SUSPENSION Covered Transactions § 801.220 What contracts and subcontracts, in addition to...

  14. Subcontract 8699K0013-9Q. Final progress report, July 19, 1993--July 18, 1996

    International Nuclear Information System (INIS)

    Humphries, S. Jr.

    1996-01-01

    A major activity in the subcontract was to provide theoretical and analytical support for experimental activities at Los Alamos National Laboratory. Reflecting changes in the laboratory organization, work was performed initially for Group P-14 and latter for the Agex Program Office. A second task was to develop, to supply and to support software in the areas of hydrodynamics, magnetohydrodynamics and electromagnetics. The programs are compatible with personal computers and allow simulations of experiments by laboratory personnel both on-site and in the field

  15. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  16. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  17. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  18. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  19. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  20. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  1. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  2. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  3. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  4. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  5. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  6. Subcontracted Forms and “Intermediary” Agents of Employment Relationships: Foremen in the Construction Sector

    Directory of Open Access Journals (Sweden)

    Elife Kart

    2016-12-01

    Full Text Available Integration of flexible and precarious structure of employment conditions and relations with subcontracting strategies enables companies to conserve their competitive power in one sense; it also introduces the conditions, which are increasingly irregulated, temporal and destabilized, with regards to the labour power. On the other hand subcontracting, as a strategy of fragmenting, individualizing and isolating labour power in itself means that working conditions have been becoming more manageable in terms of capital. In this study, focusing on the positions of intermediary persons, defined as foremen in the labour market, especially in the construction sector, the strategies with which employment relationships become increasingly unsteady, indefinite and temporal are discussed. On the one hand, depending on the efforts of capital to reproduce itself on a global scale, the effects of capital on labour power are considered on the other, how these efforts produce the intermediary agents and through them how the labour power is instrumentilized as a tool of profit and productivity are analyzed. And the fabrication of the intermediary agents, which make the new forms of domination in employment relationships visible, is studied. The study is discussed through data gathered from in-depth interviews with subcontractors

  7. 48 CFR 212.570 - Applicability of certain laws to contracts and subcontracts for the acquisition of commercially...

    Science.gov (United States)

    2010-10-01

    ..., DEPARTMENT OF DEFENSE ACQUISITION PLANNING ACQUISITION OF COMMERCIAL ITEMS Applicability of Certain Laws to the Acquisition of Commercial Items 212.570 Applicability of certain laws to contracts and... laws to contracts and subcontracts for the acquisition of commercially available off-the-shelf items...

  8. 48 CFR 970.1907 - Subcontracting with Small Business, Small Disadvantaged Business and Woman-Owned Small Business...

    Science.gov (United States)

    2010-10-01

    ... MANAGEMENT AND OPERATING CONTRACTS Small, Small Disadvantaged and Women-Owned Small Business Concerns 970.1907 Subcontracting with Small Business, Small Disadvantaged Business and Woman-Owned Small Business... Business, Small Disadvantaged Business and Woman-Owned Small Business Concerns. 970.1907 Section 970.1907...

  9. Subcontracting relations and their effects on safety and security in two firms: SNCF and GrDF

    International Nuclear Information System (INIS)

    Ponnet, Marie

    2011-01-01

    Because of economical processes that tend to move the frontiers of firms salaried relations of uncertain status are found coexisting inside the very same working world. From a qualitative investigation mixing employees' interviews and observations made on SNCF and GrDF working sites our research offers to think about the relations linking subcontracting, maintenance, safety and security. Considering subcontracting as a particular way for professional bodies to be associated allows us to wonder about its effects within a same firm (the 'integrated' subcontracting) as much as between a principal and a provider. Our thesis shows that when change occurs inside the organization - like the creation of new committees of experts or the reorganizing of an old service - security and safety can be impacted because thus professional bodies tend to be reconfigured while modifications affect practices, professional identities and work division. The relations between subcontractors and principal are complicated and their consequences depend from the context they are placed in, determined by a combination of various characteristics such as the confidence level, the available time, the reputation, the position occupied by the subcontractor. Our investigation makes clear that there is no direct link between subcontracting, security and safety. Their effects, in spite of their reality, are submitted to the altering mediation of legal factors (related to economic national and European issues) and concern the working organization as well as the professional identities. (author)

  10. Small Business: Action Needed to Determine Whether DOD’s Comprehensive Subcontracting Plan Test Program Should Be Made Permanent

    Science.gov (United States)

    2015-11-01

    plan to mean “willful or intentional failure to perform in accordance with the requirements of the subcontracting plan, or willful or intentional ...Shaheen Ranking Member Committee on Small Business and Entrepreneurship United States Senate The Honorable Mac Thornberry Chairman The Honorable

  11. Use of time and materials and cost reimbursement subcontracts for remedial actions under the alternative remedial contracting strategy contracts. Directive

    International Nuclear Information System (INIS)

    1992-01-01

    The directive is intended to establish agency guidance on the use of time and materials and cost reimbursement contracts for remedial actions in general and to provide specific instruction regarding the use of these approaches in subcontracting under the Alternative Remedial Contracting Strategy (ARCS) contracts

  12. 48 CFR 252.244-7000 - Subcontracts for Commercial Items and Commercial Components (DoD Contracts).

    Science.gov (United States)

    2010-10-01

    ... under this contract: (a) 252.225-7009 Restriction on Acquisition of Certain Articles Containing... 48 Federal Acquisition Regulations System 3 2010-10-01 2010-10-01 false Subcontracts for Commercial Items and Commercial Components (DoD Contracts). 252.244-7000 Section 252.244-7000 Federal...

  13. Lessons learned from the EG ampersand G consolidated hazardous waste subcontract and ESH ampersand Q liability assessment process

    International Nuclear Information System (INIS)

    Fix, N.J.

    1995-03-01

    Hazardous waste transportation, treatment, recycling, and disposal contracts were first consolidated at the Idaho National Engineering Laboratory in 1992 by EG and G Idaho, Inc. At that time, disposition of Resource, Conservation and Recovery Act hazardous waste, Toxic Substance Control Act waste, Comprehensive Environmental Response, Compensation, and Liability Act hazardous substances and contaminated media, and recyclable hazardous materials was consolidated under five subcontracts. The wastes were generated by five different INEL M and O contractors, under the direction of three different Department of Energy field offices. The consolidated contract reduced the number of facilities handling INEL waste from 27 to 8 qualified treatment, storage, and disposal facilities, with brokers specifically prohibited. This reduced associated transportation costs, amount and cost of contractual paperwork, and environmental liability exposure. EG and G reviewed this approach and proposed a consolidated hazardous waste subcontract be formed for the major EG and G managed DOE sites: INEL, Mound, Rocky Flats, Nevada Test Site, and 10 satellite facilities. After obtaining concurrence from DOE Headquarters, this effort began in March 1992 and was completed with the award of two master task subcontracts in October and November 1993. In addition, the effort included a team to evaluate the apparent awardee's facilities for environment, safety, health, and quality (ESH and Q) and financial liability status. This report documents the evaluation of the process used to prepare, bid, and award the EG and G consolidated hazardous waste transportation, treatment, recycling, and/or disposal subcontracts and associated ESH and Q and financial liability assessments; document the strengths and weaknesses of the process; and propose improvements that would expedite and enhance the process for other DOE installations that used the process and for the re-bid of the consolidated subcontract

  14. Lessons learned from the EG&G consolidated hazardous waste subcontract and ESH&Q liability assessment process

    Energy Technology Data Exchange (ETDEWEB)

    Fix, N.J.

    1995-03-01

    Hazardous waste transportation, treatment, recycling, and disposal contracts were first consolidated at the Idaho National Engineering Laboratory in 1992 by EG&G Idaho, Inc. At that time, disposition of Resource, Conservation and Recovery Act hazardous waste, Toxic Substance Control Act waste, Comprehensive Environmental Response, Compensation, and Liability Act hazardous substances and contaminated media, and recyclable hazardous materials was consolidated under five subcontracts. The wastes were generated by five different INEL M&O contractors, under the direction of three different Department of Energy field offices. The consolidated contract reduced the number of facilities handling INEL waste from 27 to 8 qualified treatment, storage, and disposal facilities, with brokers specifically prohibited. This reduced associated transportation costs, amount and cost of contractual paperwork, and environmental liability exposure. EG&G reviewed this approach and proposed a consolidated hazardous waste subcontract be formed for the major EG&G managed DOE sites: INEL, Mound, Rocky Flats, Nevada Test Site, and 10 satellite facilities. After obtaining concurrence from DOE Headquarters, this effort began in March 1992 and was completed with the award of two master task subcontracts in October and November 1993. In addition, the effort included a team to evaluate the apparent awardee`s facilities for environment, safety, health, and quality (ESH&Q) and financial liability status. This report documents the evaluation of the process used to prepare, bid, and award the EG&G consolidated hazardous waste transportation, treatment, recycling, and/or disposal subcontracts and associated ESH&Q and financial liability assessments; document the strengths and weaknesses of the process; and propose improvements that would expedite and enhance the process for other DOE installations that used the process and for the re-bid of the consolidated subcontract, scheduled for 1997.

  15. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  16. Wetland Biomass Production: emergent aquatic management options and evaluations. A final subcontract report. [Includes a bibliography containing 686 references on Typha from biological abstracts

    Energy Technology Data Exchange (ETDEWEB)

    Pratt, D.C.; Dubbe, D.R.; Garver, E.G.; Linton, P.J.

    1984-07-01

    The high yield potential and attractive chemical composition of Typha make it a particularly viable energy crop. The Minnesota research effort has demonstrated that total annual biomass yields equivalent to 30 dry tonnes/ha (13 tons/acre) are possible in planted stands. This compares with yields of total plant material between 9 and 16 dry tonnes/ha (4 to 7 tons/acre) in a typical Minnesota corn field. At least 50% of the Typha plant is comprised of a belowground rhizome system containing 40% starch and sugar. This high level of easily fermentable carbohydrate makes rhizomes an attractive feedstock for alcohol production. The aboveground portion of the plant is largely cellulose, and although it is not easily fermentable, it can be gasified or burned. This report is organized in a manner that focuses on the evaluation of the management options task. Results from stand management research performed at the University of Minnesota during 1982 and 1983 are integrated with findings from an extensive survey of relevant emergent aquatic plant research and utilization. These results and findings are then arranged in sections dealing with key steps and issues that need to be dealt with in the development of a managed emergent aquatic bio-energy system. A brief section evaluating the current status of rhizome harvesting is also included along with an indexed bibliography of the biology, ecology, and utilization of Typha which was completed with support from this SERI subcontract. 686 references, 11 figures, 17 tables.

  17. Subcontract Competition.

    Science.gov (United States)

    1982-11-01

    McAreavy Advanced Attack Helicopter, ATTN;. DRCPM-AAH Target Acquisition Designation System/Pilot Night Vision System, ATTN; nRCPM-AAH-TP USA Aviation...Arabian National Guard Modernization Program, ATTN: DRCPM-NG USA Communications-Electronics Command, ATTN: DRCPM-GARS SMOKE/OBSCURANTS, ATTN; DRCPM...LI~ C.’ t4 oo C) ON )~ al C a;- n en𔃾D 9- C% L In C) c! o c5 4o Lo’ w - 0) ’. co L t~0 0l C)O~L 1,.- ool *.- # 0 t; -, j CC -J tmj Li -00 0 0 C 0*J

  18. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  19. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  20. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  1. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  2. Continuous roll-to-roll a-Si photovoltaic manufacturing technology. Final subcontract report, 1 April 1992--30 September 1995

    Energy Technology Data Exchange (ETDEWEB)

    Izu, M. [Energy Conversion Devices, Inc., Troy, MI (US)

    1996-02-01

    ECD has made important progress in the development of materials, device designs, and manufacturing processes required for the continued advancement of practical photovoltaic technology{sub 1-23}. ECD has pioneered and continues further development of two key proprietary technologies, with significant potential for achieving the cost goals necessary for widespread growth of the photovoltaic market: (1) a low cost, roll-to- roll continuous substrate thin-film solar cell manufacturing process; (2) a high efficiency, monolithic, multiple-junction, spectrum- splitting thin-film amorphous silicon alloy device structure. Commercial production of multiple-junction a-Si alloy modules has been underway at ECD and its joint venture company for a number of years using ECD's proprietary roll-to-roll process and numerous advantages of this technology have been demonstrated. These include relatively low semiconductor material cost, relatively low process cost, a light-weight, rugged and flexible substrate that results in lowered installed costs of PV systems, and environmentally safe materials. Nevertheless, the manufacturing cost per watt of PV modules from our current plant remains high. In order to achieve high stable efficiency and low manufacturing cost, ECD has, at ECD's expense, engineered and constructed a 2 MW production line and a 200 kW pilot line, incorporating earlier ECD research advances in device efficiency through the use of multi-junction spectrum-splitting and high performance back-reflector cell design. Under this subcontract six tasks were directed towards achieving this goal. They are: Task I: Optimization of back-reflector system; Task II: Optimization of the Si-Ge narrow bandgap solar cells; Task III: Optimization of the stable efficiency of photovoltaic modules; Task IV: Demonstration of serpentine web continuous roll-to-roll deposition technology; Task V: Material cost reductions; and Task VI: Improving the module assembly process.

  3. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  4. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  5. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  6. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  7. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  8. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  9. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  10. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  11. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  12. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  13. Defects and diffusion in semiconductors XII

    CERN Document Server

    Fisher, David J

    2010-01-01

    This twelfth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XI (Volume 282). As well as the 565 semiconductor-related abstracts, the issue includes - in line with the policy of including original papers on all of the major material groups: ""Study of Conduction Mechanism in Amorphous Se85-xTe15Bix Thin Films"" (A.Sharma and P.B.Barman), ""Structure and Optical Properties of Magnetron-Sputtered SiOx Layers with Silicon Nanoparticles"" (L.Khomenkova, N.Korsunska, T.Stara, Y.Goldstein, J.

  14. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  15. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  16. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  17. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  18. Research on stable, high-efficiency, amorphous silicon multijunction modules. Annual subcontract report, 1 May 1991--30 April 1992

    Energy Technology Data Exchange (ETDEWEB)

    Catalano, A.; Bennett, M.; Chen, L.; D`Aiello, R.; Fieselmann, B.; Li, Y.; Newton, J.; Podlesny, R.; Yang, L. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

    1992-08-01

    This report describes work to demonstrate a multijunction module with a ``stabilized`` efficiency (600 h, 50{degrees}C, AM1.5) of 10.5%. Triple-junction devices and modules using a-Si:H alloys with carbon and germanium were developed to meet program goals. ZnO was used to provide a high optical transmission front contact. Proof of concept was obtained for several important advances deemed to be important for obtaining high (12.5%) stabilized efficiency. They were (1) stable, high-quality a-SiC:H devices and (2) high-transmission, textured ZnO. Although these developments were not scaled up and included in modules, triple-junction module efficiencies as high as 10.85% were demonstrated. NREL measured 9.62% and 9.00% indoors and outdoors, respectively. The modules are expected to lose no more than 20% of their initial performance. 28 refs.

  19. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Annual subcontract report, 1 January 1996--31 December 1996

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J. [Solarex Corp., Frederick, MD (United States)

    1997-10-01

    This report describes Solarex`s accomplishments during this phase of the Photovoltaic Manufacturing Technology (PVMaT) program. During this reporting period, Solarex researchers converted 79% of production casting stations to increase ingot size and operated them at equivalent yields and cell efficiencies; doubled the casting capacity at 20% the cost of buying new equipment to achieve the same capacity increase; operated the wire saws in a production mode with higher yields and lower costs than achieved on the ID saws; purchased additional wire saws; developed and qualified a new wire-guide coating material that doubles the wire-guide lifetime and produces significantly less scatter in wafer thickness; ran an Al paste back-surface-field process on 25% of all cells in manufacturing; completed environmental qualification of modules using cells produced by an all-print metallization process; qualified a vendor-supplied Tedlar/ethylene vinyl acetate (EVA) laminate to replace the combination of separate sheets of EVA and Tedlar backsheet; substituted RTV adhesive for the 3M Very High Bond tape after several field problems with the tape; demonstrated the operation of a prototype unit to trim/lead attach/test modules; demonstrated the use of light soldering for solar cells; demonstrated the operation of a wafer pull-down system for cassetting wet wafers; and presented three PVMaT-related papers at the 25th IEEE Photovoltaic Specialists Conference.

  20. Synthesis of the IRSN report on the management activities subcontracted by EDF in currently exploited pressurized water reactors. Opinion related to the management of activities subcontracted by EDF in currently exploited PWRs

    International Nuclear Information System (INIS)

    2015-01-01

    A first document proposes a synthesis of an assessment performed by the IRSN which more particularly addressed how the client (EDF) takes up nuclear safety challenges, and its ability to transmit them to the subcontractor and assess the way he takes them up, how the subcontractor adopts these safety issues and translate them into an adapted technical action, the efficiency of information transmission from the subcontractor to the operator, and the way EDF takes the evolution and increase of activities into account in its subcontracting management strategy on the medium and long terms in relationship with modifications generated by recent measures (additional safety assessments, project of lifetime extension). Another document states the opinion of the permanent group of experts for nuclear reactors on these issues, and outlines some specific aspects (unit outage and maintenance planning, risk analysis, intervention preparation and monitoring, return on experience and improvement of the management of subcontracted activities, evolution and increase of activities). Some recommendations are also stated. A third document is a letter sent by the ASN on the same issues which discusses problems and issues related to subcontracting and has been the basis of the IRSN assessment

  1. Implemented organisation for subcontracting companies involved in the maintenance of the French nuclear stock - Sheet nr 39

    International Nuclear Information System (INIS)

    2011-01-01

    Every year, some 20,000 subcontracted salaried employees are mobilised for maintenance operations in the French nuclear reactors. Subcontracting is an answer to different needs: specific abilities, the short delay for maintenance during which a reactor is stopped, and which requires a very important contribution of labour, and specialised labour for some interventions. The document evokes a rigorous selection and certification process, and indicates the different specific training which are organised for anyone intervening in a nuclear power plant. It outlines that radiation protection and safety arrangements are the same for all (dosimetry), and that some measurements are performed on some temporary workers. Some data shows that these controls are efficient and that safety is improving

  2. Specific PVMaT R&D in CdTe Product Manufacturing: Final Subcontract Report, March 2003

    Energy Technology Data Exchange (ETDEWEB)

    Bohland, J.; McMaster, A.; Henson, S.; Hanak, J.

    2004-01-01

    Results of a 3+ year subcontract are presented. The research was conducted under Phase 5A2 of the subcontract. The three areas of effort in the subcontract were (1) manufacturing line improvements, (2) product readiness, and (3) environmental, safety, and health programs. The subcontract consisted of three phases, approximately 1 year each. Phase I included the development, design, and implementation of a high-throughput, low-cost lamination process. This goal was achieved using the support of key experts such as Automation and Robotics Research Institute (ARRI) to identify appropriate lamination equipment vendors, and material handling. Product designs were reviewed by Arizona State University Photovoltaic Testing Laboratory and Underwriters Laboratories. Modifications to the module designs were implemented to meet future testing requirements. A complete review of the Environmental, Health, and Safety programs was conducted, along with training by the Environmental Protection Agency (EP A) and Occupational Safety and Health Administration (OSHA). Work conducted during Phase II included the implementation of an improved potting procedure for the wiring junction. The design of the equipment focused on high-throughput, low-cost operations. During Phase III , First Solar made significant progress in three areas: Manufacturing Readiness; Product Performance; and Environmental, Health, and Safety (EH&S). First Solar's accomplishments in laser scribing significantly exceeded the stated goals. Innovations implemented during Phase III were made possible by adopting a new type of high-frequency, low-pulse-width laser, galvanometer-driven laser-beam system, and numerous advanced, automated, equipment features. Because of the greater than one order of magnitude increase in the throughput and laser life, a factor of two decrease in equipment cost, and complete automation, a major impact on lowering the cost of the PV product is anticipated.

  3. The Organizing and Market Development of a Subcontracting Project to Vietnam : a Developing Export Market for Finland

    OpenAIRE

    Le, Thien

    2010-01-01

    Vietnam is one of the fastest developing countries in the world. Finland and Finnish companies have been doing more and more business in Vietnam in recent years. Understanding the environment and the business culture of the country of the utmost importance before entering the market. The goal of this project was to find a suitable subcontracting partner for the client company and thus to find information about the Vietnamese business culture. This project was carried out for Finpro which ...

  4. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  5. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  6. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  7. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  8. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  9. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  10. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  12. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  13. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  14. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  16. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  17. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  18. Mesoscale Modeling of Kinetic Phase Behaviors in Mg-B-H (Subcontract Report)

    Energy Technology Data Exchange (ETDEWEB)

    Yu, H. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Thornton, K. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Wood, B. C. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-10-13

    Storage of hydrogen on board vehicles is one of the critical enabling technologies for creating hydrogenfueled transportation systems that can reduce oil dependency and mitigate the long-term effects of fossil fuels on climate change. Stakeholders in developing hydrogen infrastructure are currently focused on highpressure storage at 350 bar and 700 bar, in part because no viable solid-phase storage material has emerged. Nevertheless, solid-state materials, including high-density hydrides, remain of interest because of their unique potential to meet all DOE targets and deliver hydrogen at lower pressures and higher on-board densities. A successful solution would significantly reduce costs and ensure the economic viability of a U.S. hydrogen infrastructure. The Mg(BH4)2-MgB2 system represents a highly promising solution because of its reasonable reaction enthalpy, high intrinsic capacity, and demonstrated reversibility, yet suffers from poor reaction kinetics. This subcontract aims to deliver a phase-field model for the kinetics of the evolution of the relevant phases within the Mg-B-H system during hydrogenation and dehydrogenation. This model will be used within a broader theory, synthesis, and characterization framework to study the properties of geometry-selected nanoparticles of pristine and doped MgB2/Mg(BH4)2 with two aims: (1) understand the intrinsic limitations in (de)hydrogenation; (2) devise strategies for improving thermodynamics and kinetics through nanostructuring.

  19. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  20. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  1. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  2. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  3. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  4. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  5. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  6. RTE - annual report 2006

    International Nuclear Information System (INIS)

    2006-01-01

    Expenditure), Employment Information (Statistics, Organisation and Working Hours, Remuneration, Working Relations and Collective Agreements, Health and Safety, Training, Employment and Integration of Disabled Employees, Social Activities, The Importance of Sub-Contracting); 6 - Annual Financial Statements: Balance Sheet (Balance Sheet Assets, Balance Sheet Equity and Liabilities), Income Statement, notes (Fiscal 2006 - Highlights, Accounting Principles, Rules and Methods (Information on the Balance Sheet and Income Statement, Financial Commitments and Further Information, Report of the Statutory Auditors); 7 - Report of the Chairman of the Supervisory Board: Corporate Governance (Supervisory Board Membership, Supervisory Board Operation, Supervisory Board Work, Economic Supervisory and Audit Committee), RTE Internal Control (Internal Control Policy, Resources Implemented, Targeted Controls in 2006, Control Procedures on the Reliability of Financial Information, Prospects for 2007)

  7. Annual report 1998

    International Nuclear Information System (INIS)

    1998-01-01

    Associated to the CEA, the CEA-Industry subsidiaries and the whole Group submit a very satisfying financial, economic and technological accounting which able to play a major role in international cooperations and to satisfy the shareholders. To illustrate these results, this annual report presents the activities of the CEA-Industry group during the year 1998. It is divided in eight chapters. The first six chapters gives general information and main financial data on respectively the CEA-Industry Group profile, economics, the fuel cycle, the nuclear power plants, the nuclear medicine and the semiconductors. The chapter 7 deals with the financial results of the fiscal year 1998 and the last chapter is devoted to the management report of the administration council. (A.L.B.)

  8. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  9. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  10. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  11. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  12. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  13. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  14. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  15. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  16. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  17. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  18. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  19. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  20. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  1. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  2. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  3. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  4. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  5. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  6. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  7. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  8. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  9. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  10. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  11. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  12. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  13. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  14. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  15. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  16. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  17. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  18. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  19. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  20. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  1. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  2. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  3. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  4. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  5. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  6. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  7. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  8. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  9. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  10. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  11. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  12. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  13. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  14. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  15. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  16. Final Report for Subcontract B541028,Pore-Scale Modeling to Support 'Pore Connectivity' Research Work

    International Nuclear Information System (INIS)

    Ewing, R.P.

    2008-01-01

    the proposal, the then-current long-term simulations used estimated diffusivity values for the rock surrounding the repository. But other gaps, both data and conceptual, also informed our investigation: (1) What is the relationship between the diffusion coefficient measured at one scale, to that measured or observed at a different scale? In classical materials this relationship is trivial; in low-connectivity materials it is not. (2) Is the measured diffusivity insensitive to the shape of the sample? Again, in classical materials there should be no sample shape effect. (3) Does sorption affect diffusive exchange in low-connectivity media differently than in classical media? (4) What is the effect of matrix saturation on the effective diffusivity? Is it different for low-connectivity media than for classical media? What levels of matrix saturation are actually encountered at Yucca Mountain? (5) In addition to changing the matrix saturation (and thereby the diffusion coefficient), the wetting/drying cycles drive water into, then out of the matrix. How do these mass flow cycles affect the long-term exchange of solutes between the fracture and the matrix? Can it be treated as a simple increase in effective diffusivity? Is it a local or a global effect? Is the effect different in low-connectivity media? The modeling portion of this project--this subcontract--primarily focused on how diffusion varies with pore connectivity. In broad terms, the experimental work connected the work to specifics of the YMP, while the modeling work connected the experimental work to theory

  17. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  18. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  19. High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003

    Energy Technology Data Exchange (ETDEWEB)

    Rand, J. A.; Culik, J. S.

    2005-10-01

    The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

  20. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  1. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  2. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  3. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  4. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  5. Subcontracting strategy for the decontamination and decommissioning of Savannah River Site's First Tritium Extraction Facility, 232-F

    International Nuclear Information System (INIS)

    Smith, C.W. Jr.; Dowd, A.S. Jr.; Hinds, S.S.; Johnson, S.V.

    1994-01-01

    The Savannah River Site (SRS) has been actively proceeding with the decontamination and decommissioning (D and D) of various facilities and structures which were instrumental in the success of past missions at the site. The most ambitious of these efforts involves the subcontracting of the complete D and D of the first SRS Tritium Extraction Facility, identified as building 232-F. This facility operated in the mid 1950's and discontinued operations permanently in 1958. The approach utilized for this effort attempts to invoke the novel principle of open-quotes As Commercial As Reasonably Achievableclose quotes or open-quotes ACARAclose quotes. This concept of ACARA applies only the minimum essential requirements necessary to successfully perform the D and D task. Integral to this approach is the subcontractor provision for maximum flexibility in the identification of and adherence to the requirements of applicable DOE Orders, federal, state and local laws and regulations, as well as site specific procedures without violating the site contractual requirements. The technical specification prepared for this effort provides the basis for a competitively bid contract to perform the entire D and D evolution, including initial facility characterization, waste stream characterization and certification, D and D and waste disposal. Preparation and development of this specification and the subsequent Request For Proposal (RFP) was a successful team oriented endeavor. The schedule for this fast-track undertaking took three months to complete. Successful initiation of this task will be the first D and D of a facility containing both radioactive and hazardous material at an operating site within the DOE Weapons Complex. The strategy for preparing the D and D subcontract for the 232-F structure was facilitated by applying the ACARA principle. This approach resulted in the accelerated development of the specification and RFP documents, as well as minimized the complexities of

  6. Research Leading to High Throughput Processing of Thin-Film CdTe PV Module: Phase I Annual Report, October 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R. C.; Meyers, P. V.

    2004-02-01

    Work under this subcontract contributes to the overall manufacturing operation. During Phase I, average module efficiency on the line was improved from 7.1% to 7.9%, due primarily to increased photocurrent resulting from a decrease in CdS thickness. At the same time, production volume for commercial sale increased from 1.5 to 2.5 MW/yr. First Solar is committed to commercializing CdTe-based thin-film photovoltaics. This commercialization effort includes a major addition of floor space and equipment, as well as process improvements to achieve higher efficiency and greater durability. This report presents the results of Phase I of the subcontract entitled''Research Leading to High Throughput Processing of Thin-Film CdTe PV Modules.'' The subcontract supports several important aspects needed to begin high-volume manufacturing, including further development of the semiconductor deposition reactor, advancement of accelerated life testing methods and understanding, and improvements to th e environmental, health, and safety programs. Progress in the development of the semiconductor deposition reactor was made in several areas. First, a new style of vapor transport deposition distributor with simpler operational behavior and the potential for improved cross-web uniformity was demonstrated. Second, an improved CdS feed system that will improve down-web uniformity was developed. Third, the core of a numerical model of fluid and heat flow within the distributor was developed, including flow in a 3-component gas system at high temperature and low pressure and particle sublimation.

  7. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  8. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  9. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  10. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  11. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  12. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  13. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  14. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  15. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  16. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  17. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  18. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  19. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  20. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  1. NREL Photovoltaic Program FY 1995 annual report

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-06-01

    This report summarizes the in-house and subcontracted R&D activities from Oct. 1994 through Sept. 1995; their objectives are to conduct basic, applied, and engineering research, manage subcontracted R&D projects, perform research complementary to subcontracted work, develop and maintain state-of-the-art measurement and device capabilities, develop PV manufacturing technology and modules, transfer results to industry, and evolve viable partnerships for PV systems and market development. The research activities are grouped into 5 sections: crystalline Si and advanced devices, thin-film PV, PV manufacturing, PV module and system performance and engineering, and PV applications and market development.

  2. Annual report '80

    International Nuclear Information System (INIS)

    1981-01-01

    This document is an annual report from the Foundation for Fundamental Research on Matter (FOM) and the Foundation Institute for Nuclear Physics Research (IKO). The FOM stimulates research in new fields of physics, by the co-ordination of existing research projects and by calling in the help of its institutes and working groups. Furthermore it supports the IKO which has as its task the promotion of fundamental and applied scientific research in the field of nuclear physics and related fields in the Netherlands. The report contains organisational and financial reports and information concerning the personnel. The following FOM institutes/working-communities have submitted separate reports: Nuclear physics, Institute for atomic and molecular physics, Atomic physics, Metals FOM-TNO, Molecular physics, Solid State, Thermonuclear Research and Plasma Physics and High energy physics. Reports are also included from the Special Committee for Theoretical physics, The Special Committee for Technical physics and the Contact Group for technical semi-conductor physics and electronics. Four ''trend articles'' are also included with the following titles: 'Atomic hydrogen as a gas at low temperatures', 'Negative ion beams', 'Turbulence in plasmas' and 'Nuclear structure described by interacting bosons'. (C.F.)

  3. Nuclear radiation detection by a variband semiconductor

    International Nuclear Information System (INIS)

    Volkov, A.S.

    1981-01-01

    Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

  4. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  5. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  6. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  7. Freescale Semiconductor Successfully Implements an Energy Management System

    Energy Technology Data Exchange (ETDEWEB)

    None

    2011-06-30

    Through the Superior Energy Performance (SEP) plant certification program, Freescale Semiconductor implemented projects at the company's Oak Hill Fab plant that reduced annual energy consumption by 28 million kilowatt hours (kWh) of electricity and 26,000 million British thermal units (Btu) of natural gas between 2006 and 2009, saving more than $2 million each year. The plant is now certified at the SEP silver level, and has a management system in place to proactively manage the facility's energy resources in the future.

  8. Automation and Integration in Semiconductor Manufacturing

    OpenAIRE

    Liao, Da-Yin

    2010-01-01

    Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

  9. NERSC 2001 Annual Report; ANNUAL

    International Nuclear Information System (INIS)

    Hules, John

    2001-01-01

    The National Energy Research Scientific Computing Center (NERSC) is the primary computational resource for scientific research funded by the DOE Office of Science. The Annual Report for FY2001 includes a summary of recent computational science conducted on NERSC systems (with abstracts of significant and representative projects); information about NERSC's current systems and services; descriptions of Berkeley Lab's current research and development projects in applied mathematics, computer science, and computational science; and a brief summary of NERSC's Strategic Plan for 2002-2005

  10. Semiconductor nanostructures for infrared applications

    NARCIS (Netherlands)

    Zurauskiene, N.; Asmontas, S.; Dargys, A.; Kundrotas, J.; Janssen, G.; Goovaerts, E.; Marcinkevicius, S.; Koenraad, P.M.; Wolter, J.H.; Leon, R.

    2004-01-01

    We present the results of time-resolved photoluminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy investigations of semiconductor quantum dots and quantum wells. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission

  11. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  12. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  13. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  14. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  15. Radiation damage in semiconductor detectors

    International Nuclear Information System (INIS)

    Kraner, H.W.

    1981-12-01

    A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced

  16. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  17. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  18. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1992-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

  19. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1995-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

  20. Evaluation of the Potential for the Production of Lignocellulosic Based Ethanol at Existing Corn Ethanol Facilities: Final Subcontract Report, 2 March 2000 - 30 March 2002

    Energy Technology Data Exchange (ETDEWEB)

    2002-07-01

    Subcontract report on opportunities to explore the business potential provided by converting biomass to products such as ethanol. The goals of this study were: (1) To provide the opportunity to explore the business potential provided by converting biomass to products such as ethanol. (2) To take advantage of the grain-processing infrastructure by investigating the co-location of additional biomass conversion facilities at an existing plant site.

  1. Annual report

    International Nuclear Information System (INIS)

    1986-01-01

    This is the thirty-ninth annual report of the Atomic Energy Control Board. The period covered by this report is the year ending March 31, 1986. The Atomic Energy Control Board (AECB) was established in 1946, by the Atomic Energy Control Act (AEC Act), (Revised Statues of Canada (R.S.C.) 1970 cA19). It is a departmental corporation (Schedule B) within the meaning and purpose of the Financial Administration Act. The AECB controls the development, application and use of atomic energy in Canada, and participates on behalf of Canada in international measures of control. The AECB is also repsonsible for the administration of the Nuclear Liability Act, (R.S.C. 1970 c29 1st Supp) as amended, including the designation of nuclear installations and the prescription of basic insurance to be carried by the operators of such nuclear installations. The AECB reports to Parliament through a designated Minister, currently the Minister of Energy, Mines and Resources

  2. Transversal light forces in semiconductors

    CERN Document Server

    Lindberg, M

    2003-01-01

    The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

  3. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  4. Hypersonic modes in nanophononic semiconductors.

    Science.gov (United States)

    Hepplestone, S P; Srivastava, G P

    2008-09-05

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  5. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  6. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  7. Efficient Spin Injection into Semiconductor

    International Nuclear Information System (INIS)

    Nahid, M.A.I.

    2010-06-01

    Spintronic research has made tremendous progress nowadays for making future devices obtain extra advantages of low power, and faster and higher scalability compared to present electronic devices. A spintronic device is based on the transport of an electron's spin instead of charge. Efficient spin injection is one of the very important requirements for future spintronic devices. However, the effective spin injection is an exceedingly difficult task. In this paper, the importance of spin injection, basics of spin current and the essential requirements of spin injection are illustrated. The experimental technique of electrical spin injection into semiconductor is also discussed based on the experimental experience. The electrical spin injection can easily be implemented for spin injection into any semiconductor. (author)

  8. Compound semiconductor optical waveguide switch

    Science.gov (United States)

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  9. Semiconductors put spin in spintronics

    International Nuclear Information System (INIS)

    Weiss, Dieter

    2000-01-01

    Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

  10. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  11. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  12. Radiation tolerance of amorphous semiconductors

    International Nuclear Information System (INIS)

    Nicolaides, R.V.; DeFeo, S.; Doremus, L.W.

    1976-01-01

    In an attempt to determine the threshold radiation damage in amorphous semiconductors, radiation tests were performed on amorphous semiconductor thin film materials and on threshold and memory devices. The influence of flash x-rays and neutron radiation upon the switching voltages, on- and off-state characteristics, dielectric response, optical transmission, absorption band edge and photoconductivity were measured prior to, during and following irradiation. These extensive tests showed the high radiation tolerance of amorphous semiconductor materials. Electrical and optical properties, other than photoconductivity, have a neutron radiation tolerance threshold above 10 17 nvt in the steady state and 10 14 nvt in short (50 μsec to 16 msec) pulses. Photoconductivity increases by 1 1 / 2 orders of magnitude at the level of 10 14 nvt (short pulses of 50 μsec). Super flash x-rays up to 5000 rads (Si), 20 nsec, do not initiate switching in off-state samples which are voltage biased up to 90 percent of the threshold voltage. Both memory and threshold amorphous devices are capable of switching on and off during nuclear radiation transients at least as high as 2 x 10 14 nvt in 50 μsec pulses

  13. Thienoacene-based organic semiconductors.

    Science.gov (United States)

    Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

    2011-10-11

    Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Identification of defects in semiconductors

    CERN Document Server

    Stavola, Michael; Weber, Eicke R; Stavola, Michael

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this traditi...

  15. The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

    International Nuclear Information System (INIS)

    Aydin, M. E.

    2008-01-01

    n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

  16. An Industrial-Based Consortium to Develop Premium Carbon Products from Coal, Annual Progress Report, October 1, 2005 through September 30, 2006

    Energy Technology Data Exchange (ETDEWEB)

    Miller, Bruce G

    2006-09-29

    Since 1998, The Pennsylvania State University has been successfully managing the Consortium for Premium Carbon Products from Coal (CPCPC), which is a vehicle for industry-driven research on the promotion, development, and transfer of innovative technology on premium carbon produces from coal to the U.S. industry. The CPCPC is an initiative being led by Penn State, its co-charter member West Virginia University (WVU), and the U.S. Department of Energy's (DOE) National Energy Technology Laboratory (NETL), who also provides the base funding for the program, with Penn State responsible for consortium management. CPCPC began in 1998 under DOE Cooperative Agreement No. DE-FC26-98FT40350. This agreement ended November 2004 but the CPCPC activity has continued under the present cooperative agreement, No. DE-FC26-03NT41874, which started October 1, 2003. The objective of the second agreement is to continue the successful operation of the CPCPC. The CPCPC has enjoyed tremendous success with its organizational structure, that includes Penn State and WVU as charter members, numerous industrial affiliate members, and strategic university affiliate members together with NETL, forming a vibrant and creative team for innovative research in the area of transforming coal to carbon products. The key aspect of CPCPC is its industry-led council that selects proposals submitted by CPCPC members to ensure CPCPC target areas have strong industrial support. Base funding for the selected projects is provided by NETL with matching funds from industry. At the annual funding meeting held in October 2003, ten projects were selected for funding. Subcontracts were let from Penn State to the subcontractors on March 1, 2004. Nine of the ten 2004 projects were completed during the previous annual reporting period and their final reports were submitted with the previous annual report (i.e., 10/01/04-09/30/05). The final report for the remaining project, which was submitted during this reporting

  17. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  18. Conductivity in transparent oxide semiconductors.

    Science.gov (United States)

    King, P D C; Veal, T D

    2011-08-24

    Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

  19. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  20. Quarterly, Bi-annual and Annual Reports

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The Quarterly, Bi-annual and Annual Reports are periodic reports issued for public release. For the deep set fishery these reports are issued quarterly and anually....

  1. Roadmap on semiconductor-cell biointerfaces

    Science.gov (United States)

    Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

    2018-05-01

    This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

  2. Scanning electron microscopy of semiconductor materials

    International Nuclear Information System (INIS)

    Bresse, J.F.; Dupuy, M.

    1978-01-01

    The use of scanning electron microscopy in semiconductors opens up a large field of use. The operating modes lending themselves to the study of semiconductors are the induced current, cathodoluminescence and the use of the potential contrast which can also be applied very effectively to the study of the devices (planar in particular). However, a thorough knowledge of the mechanisms of the penetration of electrons, generation and recombination of generated carriers in a semiconductor is necessary in order to attain a better understanding of the operating modes peculiar to semiconductors [fr

  3. Reflection technique for thermal mapping of semiconductors

    Science.gov (United States)

    Walter, Martin J.

    1989-06-20

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  4. Porous and Nanoporous Semiconductors and Emerging Applications

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2006-01-01

    Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

  5. Metallurgy and purification of semiconductor materials

    International Nuclear Information System (INIS)

    Mughal, G.R.; Ali, M.M.; Ali, I.

    1996-01-01

    In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

  6. Emission and Absorption Entropy Generation in Semiconductors

    DEFF Research Database (Denmark)

    Reck, Kasper; Varpula, Aapo; Prunnila, Mika

    2013-01-01

    While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

  7. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  8. FY 1977 Annual report on Sunshine Project results. Research and development of photovoltaic power generation systems. (Research and development of solar cells of II-VI group compound semiconductor); 1977 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. II-VI zoku kagobutsu handotai taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1978-03-31

    This project is aimed at establishment of techniques for pollution-free production of II-VI group compound semiconductor type solar cells. The research items are (1) measures against aging, (2) methods for production of II-VI group compound semiconductors and for forming their joints, and (3) method for assembling solar cell devices.For the item (1), the aging tests are conducted for sintered film type CdS/CdTe solar cells. The C electrode is found to be less aged than the others. The aging tests for the CdS/Cu{sub 2}S cells indicate that it takes 10 years or longer for the performance to be halved under commercial conditions. For the item (2), the sintered film type CdS/CdTe solar cells can be produced by a mass-producible process of screen printing and belt furnace. This production method is promising for producing the solar cells at low cost. For the item (3), it is found that series resistance of the solar cell devices increases as the assembly area increases, resulting in decreased conversion efficiency. The divided structure of the CdTe layer is desired to avoid the above problem. Dividing each unit device increases intrinsic conversion efficiency, but decreases effective power generation area ratio. It is therefore necessary to improve printing precision. (NEDO)

  9. Method of manufacturing a semiconductor sensor device and semiconductor sensor device

    NARCIS (Netherlands)

    2009-01-01

    The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

  10. Ultrafast laser-semiconductor interactions

    International Nuclear Information System (INIS)

    Schile, L.A.

    1996-01-01

    Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

  11. Ion implantation in semiconductor bodies

    International Nuclear Information System (INIS)

    Badawi, M.H.

    1984-01-01

    Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

  12. Method of manufacturing semiconductor devices

    International Nuclear Information System (INIS)

    Sun, Y.S.E.

    1980-01-01

    A method of improving the electrical characteristics of semiconductor devices such as SCR's, rectifiers and triacs during their manufacture is described. The system consists of electron irradiation at an energy in excess of 250 KeV and most preferably between 1.5 and 12 MeV, producing an irradiation dose of between 5.10 12 and 5.10 15 electrons per sq. cm., and at a temperature in excess of 100 0 C preferably between 150 and 375 0 C. (U.K.)

  13. Physics with isotopically controlled semiconductors

    International Nuclear Information System (INIS)

    Haller, E.E.

    1994-08-01

    Control of the isotopic composition of semiconductors offers a wide range of new scientific opportunities. In this paper a number of recent results obtained with isotopically pure as well as deliberately mixed diamond and Ge bulk single crystals and Ge isotope superlattices will be reviewed. Isotopic composition affects several properties such as phonon energies, bandstructure and lattice constant in subtle but theoretically well understood ways. Large effects are observed for thermal conductivity, local vibrational modes of impurities and after neutron transmutation doping (NTD). Several experiments which could profit greatly from isotope control are proposed

  14. Theory of semiconductor laser cooling

    Science.gov (United States)

    Rupper, Greg

    Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

  15. Chaotic bursting in semiconductor lasers

    Science.gov (United States)

    Ruschel, Stefan; Yanchuk, Serhiy

    2017-11-01

    We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

  16. Processing of insulators and semiconductors

    Science.gov (United States)

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  17. Bistable amphoteric centers in semiconductors

    International Nuclear Information System (INIS)

    Nikitina, A. G.; Zuev, V. V.

    2008-01-01

    It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U - centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach

  18. Electron beam writing on semiconductors

    International Nuclear Information System (INIS)

    Bierhenke, H.; Kutzer, E.; Pascher, A.; Plitzner, H.; Rummel, P.; Siemens A.G., Muenchen; Siemens A.G., Muenchen

    1979-08-01

    Reported are the results of the 3 1/2 year research project 'Electron beam Writing on Semiconductors'. Work has been done in the field of direct wafer exposure techniques, and of mask making. Described are resist technology, setting up of a research device, exploration of alignment procedures, manufacturing of devices and their radiation influence. Furthermore, investigations and measurements of an electron beam machine bought for mask making purposes, the development of LSI-circuits with this machine, the software necessary and important developments of digital subsystems are reported. (orig.) [de

  19. Trace analysis of semiconductor materials

    CERN Document Server

    Cali, J Paul; Gordon, L

    1964-01-01

    Trace Analysis of Semiconductor Materials is a guidebook concerned with procedures of ultra-trace analysis. This book discusses six distinct techniques of trace analysis. These techniques are the most common and can be applied to various problems compared to other methods. Each of the four chapters basically includes an introduction to the principles and general statements. The theoretical basis for the technique involved is then briefly discussed. Practical applications of the techniques and the different instrumentations are explained. Then, the applications to trace analysis as pertaining

  20. Continuous, automated manufacturing of string ribbon Si PV modules. PVMaT Phase 5A2 Subcontract: First Annual Report, 21 May 1998--20 May 1999

    Energy Technology Data Exchange (ETDEWEB)

    Hanoka, J.I.

    1999-11-03

    This report describes the first year of a 3-year PVMaT Phase 5A2 program. Evergreen Solar will soon be expanding into a multi-megawatt facility and the PVMaT work will be used to further the objective of a high-throughput automated production line in every aspect of PV module making from producing silicon ribbon to making a finished module. The project has four task areas for this first year: crystal growth; cell manufacturing; modules; and factory layout and automation. The vast majority of the work this first year has been in the crystal growth and cell manufacturing areas. Evergreen Solar has its own unique technology in each of these areas. In crystal growth, a key goal of this PVMaT project has been developing and deploying an improved string material. The high-temperature string materials are used to stabilize the edges of the growing silicon ribbon in the String Ribbon silicon sheet growth. The result has been one of the major successes of this first year. Significant cost reductions and yield improvements have emerged from this improved string material. In addition, some of the groundwork for automation of the String Ribbon crystal growth process has been laid and shows much promise. A method for controlling the edge meniscus height was developed, and a patent has been filed based on this discovery. In the cell manufacturing area, the focus has been on reducing the number of processing steps and on design and construction of high-speed processing equipment. The possibility of eliminating all pre-diffusion etching and going directly from growth to diffusion has been demonstrated on an R and D scale. Unique designs for high-speed drying equipment and for a high-speed contact and AR-coating application machine have been developed. In the latter case, the basic concepts underlying various aspects of the machine design have been successfully tested for viability. The integration of the different components of this machine into a smoothly working whole is now well under way. In addition, nonvacuum methods of hydrogen passivation have been investigated, but no production-viable process has emerged from this work. In the module area, initial work has shown that the unique properties of the backskin developed under Evergreen's earlier PVMaT Phase 4A1 contract can be expected to make the lay-up process simpler and involve less labor. For factory layout and automation, the authors have enlisted the Fraunhofer Manufacturing Institute at Boston University to aid them with the layout and process flow of their new factory. In general, the project is on schedule, with no significant technical barriers to reach their ultimate objectives.

  1. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, 1 May 1991--30 April 1992

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, R.G. [Harvard Univ., Cambridge, MA (United States). Dept. of Chemistry

    1993-04-01

    This report describes work to improve the performance of solar cells by improving the electrical and optical properties of their transparent conducting oxides (TCO) layers. Boron-doped zinc-oxide films were deposited by atmospheric pressure chemical vapor deposition in a laminar-flow reactor from diethyl zinc, tert-butanol, and diborane in the temperature range between 300{degrees}C and 420{degrees}C. When the deposition temperature was above 320{degrees}C, both doped and undoped films have highly oriented crystallites with their c-axes perpendicular to the substrate plane. Films deposited from 0.07% diethyl zinc and 2.4% tert-butanol have electron densities between 3.5 {times} 10{sup 20} cm{sup {minus}3} and 5.5 {times} 10{sup 20} cm{sup {minus}3}, conductivities between 250 {Omega}{sup {minus}1} and 2500 {Omega}{sup {minus}1} and mobilities between 2.5 cm{sup 2}/V-s and 35.0 cm{sup 2}/V-s, depending on dopant concentration, film thickness, and deposition temperature. Optical measurements show that the maximum infrared reflectance of the doped films is close to 90%, compared to about 20% for undoped films. Film visible absorption and film conductivity were found to increase with film thickness. The ratio of conductivity to visible absorption coefficient for doped films was between 0.1 {Omega} and 1.1 {Omega}{sup {minus}1}. The band gap of the film changes from 3.3 eV to 3.7 eV when the film is doped with 0.012% diborane.

  2. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

    2009-01-01

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

  3. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  4. Semiconductor nanostructures for artificial photosynthesis

    Science.gov (United States)

    Yang, Peidong

    2012-02-01

    Nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have already been demonstrated as important materials for different energy conversion. One emerging and exciting direction is their application for solar to fuel conversion. The generation of fuels by the direct conversion of solar energy in a fully integrated system is an attractive goal, but no such system has been demonstrated that shows the required efficiency, is sufficiently durable, or can be manufactured at reasonable cost. One of the most critical issues in solar water splitting is the development of a suitable photoanode with high efficiency and long-term durability in an aqueous environment. Semiconductor nanowires represent an important class of nanostructure building block for direct solar-to-fuel application because of their high surface area, tunable bandgap and efficient charge transport and collection. Nanowires can be readily designed and synthesized to deterministically incorporate heterojunctions with improved light absorption, charge separation and vectorial transport. Meanwhile, it is also possible to selectively decorate different oxidation or reduction catalysts onto specific segments of the nanowires to mimic the compartmentalized reactions in natural photosynthesis. In this talk, I will highlight several recent examples in this lab using semiconductor nanowires and their heterostructures for the purpose of direct solar water splitting.

  5. Dopants and defects in semiconductors

    CERN Document Server

    McCluskey, Matthew D

    2012-01-01

    "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … The book will be most useful for beginning graduate students in materials science. … an easy reading, broad introductory overview of the field …"-Materials Today, July-August 2012"… well written, with clear, lucid explanations …"-Chemistry World"The scientific development towards the method of controllable doping transformed the erratic and not reproducible family of semiconductor materials into the truly wonderful basis of modern microelectronics. This book tells the remarkable success story and I recommend it!"-Hans J. Queisser, Max-Planck-Institute, Stuttgart, Germany"McCluskey and Haller have written an outstanding modern guide to this field that will be useful to newcomers, and also to active researchers who want to broaden their horizons, as a means to learn the capabilities and limitations of the many techniques that are used in semiconductor-defect science."-Professor Michael J....

  6. The ATLAS semiconductor tracker (SCT)

    International Nuclear Information System (INIS)

    Jackson, J.N.

    2005-01-01

    The ATLAS detector (CERN,LHCC,94-43 (1994)) is designed to study a wide range of physics at the CERN Large Hadron Collider (LHC) at luminosities up to 10 34 cm -2 s -1 with a bunch-crossing rate of 40 MHz. The Semiconductor Tracker (SCT) forms a key component of the Inner Detector (vol. 1, ATLAS TDR 4, CERN,LHCC 97-16 (1997); vol. 2, ATLAS TDR 5, CERN,LHCC 97-17 (1997)) which is situated inside a 2 T solenoid field. The ATLAS Semiconductor Tracker (SCT) utilises 4088 silicon modules with binary readout mounted on carbon fibre composite structures arranged in the forms of barrels in the central region and discs in the forward region. The construction of the SCT is now well advanced. The design of the SCT modules, services and support structures will be briefly outlined. A description of the various stages in the construction process will be presented with examples of the performance achieved and the main difficulties encountered. Finally, the current status of the construction is reviewed

  7. Charge transport in organic semiconductors.

    Science.gov (United States)

    Bässler, Heinz; Köhler, Anna

    2012-01-01

    Modern optoelectronic devices, such as light-emitting diodes, field-effect transistors and organic solar cells require well controlled motion of charges for their efficient operation. The understanding of the processes that determine charge transport is therefore of paramount importance for designing materials with improved structure-property relationships. Before discussing different regimes of charge transport in organic semiconductors, we present a brief introduction into the conceptual framework in which we interpret the relevant photophysical processes. That is, we compare a molecular picture of electronic excitations against the Su-Schrieffer-Heeger semiconductor band model. After a brief description of experimental techniques needed to measure charge mobilities, we then elaborate on the parameters controlling charge transport in technologically relevant materials. Thus, we consider the influences of electronic coupling between molecular units, disorder, polaronic effects and space charge. A particular focus is given to the recent progress made in understanding charge transport on short time scales and short length scales. The mechanism for charge injection is briefly addressed towards the end of this chapter.

  8. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    International Nuclear Information System (INIS)

    Birner, Stefan

    2011-01-01

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano 3 software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano 3 software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model to recently

  9. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Birner, Stefan

    2011-11-15

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model

  10. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  11. Hybrid anode for semiconductor radiation detectors

    Science.gov (United States)

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  12. Terahertz plasmonics with semiconductor surfaces and antennas

    NARCIS (Netherlands)

    Gómez Rivas, J.; Berrier, A.

    2009-01-01

    Semiconductors have a Drude-like behavior at terahertz (THz) frequencies similar to metals at optical frequencies. Narrow band gap semiconductors have a dielectric constant with a negative real component and a relatively small imaginary component. This permittivity is characteristic of noble metals

  13. Redox properties of small semiconductor particles

    International Nuclear Information System (INIS)

    Liver, N.; Nitzan, A.

    1992-01-01

    The size dependence of electrical and thermodynamic quantities of intermediate-sized semiconductor particles in an electrolyte solution with a given redox pair are studied. The equilibrium constant for this system is then derived based on the relationship of the electrolytic redox components to the size, charges, and concentration of the semiconductor particles. 25 refs., 9 figs., 1 tab

  14. neutron-Induced Failures in semiconductor Devices

    Energy Technology Data Exchange (ETDEWEB)

    Wender, Stephen Arthur [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-13

    Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

  15. Semiconductor composition containing iron, dysprosium, and terbium

    Science.gov (United States)

    Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.; Malasi, Abhinav; Taz, Humaira; Farah, Annettee E.; Kalyanaraman, Ramakrishnan; Duscher, Gerd Josef Mansfred; Patel, Maulik K.

    2017-09-26

    An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

  16. Epitaxy of semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Krogstrup, P.; Ziino, N.L.B.; Chang, W.

    2015-01-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...

  17. Power semiconductor device adaptive cooling assembly

    NARCIS (Netherlands)

    2011-01-01

    The invention relates to a power semiconductor device (100) cooling assembly for cooling a power semiconductor device (100), wherein the assembly comprises an actively cooled heat sink (102) and a controller (208; 300), wherein the controller (208; 300) is adapted for adjusting the cooling

  18. Two-fluid hydrodynamic model for semiconductors

    DEFF Research Database (Denmark)

    Maack, Johan Rosenkrantz; Mortensen, N. Asger; Wubs, Martijn

    2018-01-01

    The hydrodynamic Drude model (HDM) has been successful in describing the optical properties of metallic nanostructures, but for semiconductors where several different kinds of charge carriers are present an extended theory is required. We present a two-fluid hydrodynamic model for semiconductors...

  19. Miniature semiconductor detectors for in vivo dosimetry

    International Nuclear Information System (INIS)

    Rosenfeld, A. B.; Cutajar, D.; Lerch, M. L. F.; Takacs, G.; Cornelius, I. M.; Yudelev, M.; Zaider, M.

    2006-01-01

    Silicon mini-semiconductor detectors are found in wide applications for in vivo personal dosimetry and dosimetry and Micro-dosimetry of different radiation oncology modalities. These applications are based on integral and spectroscopy modes of metal oxide semiconductor field effect transistor and silicon p-n junction detectors. The advantages and limitations of each are discussed. (authors)

  20. Dispersion-induced nonlinearities in semiconductors

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, A.

    2002-01-01

    A dispersive and saturable medium is shown, under very general conditions, to possess ultrafast dynamic behaviour due to non-adiabatic polarisation dynamics. Simple analytical expressions relating the effect to the refractive index dispersion of a semiconductor ire derived and the magnitude...... of the equivalent Kerr coefficient is shown to be in qualitative agreement with measurements on active semiconductor waveguides....

  1. Electronic structure of filled tetrahedral semiconductors

    NARCIS (Netherlands)

    Wood, D.M.; Zunger, Alex; Groot, R. de

    1985-01-01

    We discuss the susceptibility of zinc-blende semiconductors to band-structure modification by insertion of small atoms at their tetrahedral interstitial states. GaP is found to become a direct-gap semiconductor with two He atoms present at its interstitial sites; Si does not. Analysis of the factors

  2. Apparatus for testing semiconductor devices and capacitors

    International Nuclear Information System (INIS)

    York, R.A.

    1984-01-01

    An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

  3. High Throughput Manufacturing of Thin-Film CdTe Photovoltaic Materials; Final Subcontract Report, 16 November 1993-31 December 1998

    International Nuclear Information System (INIS)

    Sandwisch, D.W.

    1999-01-01

    This report describes work performed by Solar Cells, Inc. (SCI), during this Photovoltaic Manufacturing Technology (PVMaT) subcontract. Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. SCI has developed this technology and is preparing to scale its pilot production capabilities to a multi-megawatt level. This four-phase PVMaT subcontract supports these efforts. The work was related to product definition, process definition, equipment engineering, and support programs development. In the area of product definition and demonstration, two products were specified and demonstrated-a grid-connected, frameless, high-voltage product that incorporates a pigtail potting design and a remote low-voltage product that may be framed and may incorporate a junction box. SCI produced a 60.3-W thin-film CdTe module with total-area efficiency of 8.4%; SCI also improved module pass rate on the interim qualification test protocol from less than 20% to 100% as a result of work related to the subcontract. In the manufacturing process definition area, the multi-megawatt manufacturing process was defined, several of the key processes were demonstrated, and the process was refined and proven on a 100-kW pilot line that now operates as a 250-kW line. In the area of multi-megawatt manufacturing-line conceptual design review, SCI completed a conceptual layout of the multi-megawatt lines. The layout models the manufacturing line and predicts manufacturing costs. SCI projected an optimized capacity, two-shift/day operation of greater than 25 MW at a manufacturing cost of below$1.00/W

  4. High Throughput Manufacturing of Thin-Film CdTe Photovoltaic Materials; Final Subcontract Report, 16 November 1993-31 December 1998

    Energy Technology Data Exchange (ETDEWEB)

    Sandwisch, D. W. (Solar Cells, Inc.)

    1999-09-02

    This report describes work performed by Solar Cells, Inc. (SCI), during this Photovoltaic Manufacturing Technology (PVMaT) subcontract. Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. SCI has developed this technology and is preparing to scale its pilot production capabilities to a multi-megawatt level. This four-phase PVMaT subcontract supports these efforts. The work was related to product definition, process definition, equipment engineering, and support programs development. In the area of product definition and demonstration, two products were specified and demonstrated-a grid-connected, frameless, high-voltage product that incorporates a pigtail potting design and a remote low-voltage product that may be framed and may incorporate a junction box. SCI produced a 60.3-W thin-film CdTe module with total-area efficiency of 8.4%; SCI also improved module pass rate on the interim qualification test protocol from less than 20% to 100% as a result of work related to the subcontract. In the manufacturing process definition area, the multi-megawatt manufacturing process was defined, several of the key processes were demonstrated, and the process was refined and proven on a 100-kW pilot line that now operates as a 250-kW line. In the area of multi-megawatt manufacturing-line conceptual design review, SCI completed a conceptual layout of the multi-megawatt lines. The layout models the manufacturing line and predicts manufacturing costs. SCI projected an optimized capacity, two-shift/day operation of greater than 25 MW at a manufacturing cost of below $1.00/W.

  5. Manipulating semiconductor colloidal stability through doping.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  6. Device Physics of Narrow Gap Semiconductors

    CERN Document Server

    Chu, Junhao

    2010-01-01

    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  7. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  8. Molecular semiconductors photoelectrical properties and solar cells

    CERN Document Server

    Rees, Ch

    1985-01-01

    During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator « 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds,...

  9. The motivation of subcontracted workers: a never-ending paradox La motivación de los trabajadores subcontratados. Una paradoja incesante

    Directory of Open Access Journals (Sweden)

    Alina Marcela Bustamente Salazar

    2010-12-01

    Full Text Available Certain considerations come about the subcontracted workers motivation when the Strategic Human Resource Management is used as a point of reference for diverse analysis. This article shows two faces of Human Resource Management. On one hand, the article indicates how important worker motivation has been for Human Resource Management and its direct association with worker productivity and efficacy. On the other hand, it points out the increasing importance that subcontracting has had as an alternative that allows companies the flexibilization and minimization of labor costs. Even though a structural contradiction comes up in this context, subcontracting seems to strive for feelings of affiliation and pride of belonging which are key elements to motivate the personnel. Apart from the literature review, the study was based on an ethnographic methodology of executives, contractors and subcontracted workers; and the results aim to contribute to streams of Organizational Theory and Human Resource Management.En el artículo se presentan consideraciones acerca de la motivación de los trabajadores subcontratados, en el marco de referencia de la “Gestión Humana Estratégica”. Se exponendos facetas de la administración de personal: por un lado, lo importante que ha sido lamotivación de los trabajadores para la Gestión Humana, como también la asociacióndirecta de esta con la productividad y la eficacia. Por otra parte, el auge creciente que hatenido la subcontratación como alternativa que permite a las empresas la flexibilizacióny minimización de sus costos laborales. Sin embargo, en este contexto, aparece unacontradicción estructural: la subcontratación parece atentar contra los sentimientos deafiliación y pertenencia organizacional, elementos claves para la motivación del personal.Además de la revisión documental, se llevó a cabo un trabajo etnometodológico conejecutivos, contratistas y empleados subcontratados. Los

  10. TSOM method for semiconductor metrology

    Science.gov (United States)

    Attota, Ravikiran; Dixson, Ronald G.; Kramar, John A.; Potzick, James E.; Vladár, András E.; Bunday, Benjamin; Novak, Erik; Rudack, Andrew

    2011-03-01

    Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement sensitivity using conventional optical microscopes; measurement sensitivities are comparable to what is typical when using scatterometry, scanning electron microscopy (SEM), and atomic force microscopy (AFM). TSOM can be used in both reflection and transmission modes and is applicable to a variety of target materials and shapes. Nanometrology applications that have been demonstrated by experiments or simulations include defect analysis, inspection and process control; critical dimension, photomask, overlay, nanoparticle, thin film, and 3D interconnect metrologies; line-edge roughness measurements; and nanoscale movements of parts in MEMS/NEMS. Industries that could benefit include semiconductor, data storage, photonics, biotechnology, and nanomanufacturing. TSOM is relatively simple and inexpensive, has a high throughput, and provides nanoscale sensitivity for 3D measurements with potentially significant savings and yield improvements in manufacturing.

  11. Semirelativity in semiconductors: a review.

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-20

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures [Formula: see text] are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band [Formula: see text] description for NGS. The maximum electron velocity in NGS is [Formula: see text], which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In [Formula: see text] alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength [Formula: see text] is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that [Formula: see text] is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing energy. This conclusion is confirmed experimentally for NGS. Electrons

  12. Reconfigurable engineered motile semiconductor microparticles.

    Science.gov (United States)

    Ohiri, Ugonna; Shields, C Wyatt; Han, Koohee; Tyler, Talmage; Velev, Orlin D; Jokerst, Nan

    2018-05-03

    Locally energized particles form the basis for emerging classes of active matter. The design of active particles has led to their controlled locomotion and assembly. The next generation of particles should demonstrate robust control over their active assembly, disassembly, and reconfiguration. Here we introduce a class of semiconductor microparticles that can be comprehensively designed (in size, shape, electric polarizability, and patterned coatings) using standard microfabrication tools. These custom silicon particles draw energy from external electric fields to actively propel, while interacting hydrodynamically, and sequentially assemble and disassemble on demand. We show that a number of electrokinetic effects, such as dielectrophoresis, induced charge electrophoresis, and diode propulsion, can selectively power the microparticle motions and interactions. The ability to achieve on-demand locomotion, tractable fluid flows, synchronized motility, and reversible assembly using engineered silicon microparticles may enable advanced applications that include remotely powered microsensors, artificial muscles, reconfigurable neural networks and computational systems.

  13. High throughput semiconductor deposition system

    Science.gov (United States)

    Young, David L.; Ptak, Aaron Joseph; Kuech, Thomas F.; Schulte, Kevin; Simon, John D.

    2017-11-21

    A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

  14. Magnetic susceptibility of semiconductor melts

    International Nuclear Information System (INIS)

    Kutvitskij, V.A.; Shurygin, P.M.

    1975-01-01

    The temperature dependences chi of various alloys confirm the existence of cluster formations in molten semiconductors, the stability of these formations in melts being considerably affected by the anion nature. The concentrational dependences of the magnetic susceptibility for all the investigated systems exhibit the diamagnetism maxima corresponding to the compound compositions. Heating the melt causes ''smearing'' the maxima, which is related with the cluster structure dissociation. The existence of the maxima concentrational dependence chi corresponding to BiTe and BiSe is found in the isotherms. The non-linear dependence of chi on the composition shows the absence of a single-valued relation between the phase diagram and the chi-diagram for melts

  15. Volatile organometallic and semiconductor materials

    International Nuclear Information System (INIS)

    Dickson, R.S.

    1991-01-01

    This article reports on a project concerned with the metal organic chemical vapour deposition (MOCVD) of mercury-cadmium telluride (MCT) undertaken by a research consortium based in the Clayton area involving Monash University Chemistry Department, Telecom Research Laboratories, and CSIRO Division of Material Sciences and Technology. An M.R. Semicon 226 MOCVD reactor, operating near atmospheric presure with hydrogen carrier gas has been used. Most applications of MCT are direct consequence of its responsiveness to radiation in infrared region spectrum. The main aims of the project were to prepare and assess a range of volatile organometallics that might find use as a dopant sources for MCT, to prepare and study the properties of a range of different lanthanide complexes for MOCVD applications and to fully characterize the semiconductor wafers after growth. 19 refs., 3 figs

  16. Theory of Defects in Semiconductors

    CERN Document Server

    Drabold, David A

    2007-01-01

    Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

  17. Semirelativity in semiconductors: a review

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-01

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures \\varepsilon ≤ft(\\mathbf{k}\\right) are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band \\mathbf{k}\\centerdot \\mathbf{p} description for NGS. The maximum electron velocity in NGS is u≃ 1× {{10}8}~\\text{cm}~{{\\text{s}}-1} , which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In \\text{H}{{\\text{g}}1-x}\\text{C}{{\\text{d}}x}\\text{Te} alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength {λz} is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that {λz} is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing

  18. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  19. Photodiodes based on fullerene semiconductor

    International Nuclear Information System (INIS)

    Voz, C.; Puigdollers, J.; Cheylan, S.; Fonrodona, M.; Stella, M.; Andreu, J.; Alcubilla, R.

    2007-01-01

    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum

  20. Fundamentals of semiconductor processing technology

    CERN Document Server

    El-Kareh, Badih

    1995-01-01

    The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac­ turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil­ ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech­ n...

  1. Solid-state NMR of inorganic semiconductors.

    Science.gov (United States)

    Yesinowski, James P

    2012-01-01

    Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

  2. Foreword: Focus on Superconductivity in Semiconductors

    Directory of Open Access Journals (Sweden)

    Yoshihiko Takano

    2008-01-01

    Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

  3. Frequency modulation of semiconductor disk laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Zolotovskii, I O; Korobko, D A; Okhotnikov, O G [Ulyanovsk State University, Ulyanovsk (Russian Federation)

    2015-07-31

    A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

  4. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  5. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  6. Laser Cooling of 2-6 Semiconductors

    Science.gov (United States)

    2016-08-12

    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

  7. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  8. Improvements in or relating to semiconductor devices

    International Nuclear Information System (INIS)

    Cooper, K.; Groves, I.S.; Leigh, P.A.; McIntyre, N.; O'Hara, S.; Speight, J.D.

    1980-01-01

    A method of producing semiconductor devices is described consisting of a series of physical and chemical techniques which results in the production of semiconductor devices such as IMPATT diodes of DC-RF efficiency and high reliability (lifetime). The diodes can be mass produced without significant variation of the technology. One of the techniques used is the high energy proton bombardment of the semiconductor material in depth to passivate specific zones. The energy of the protons is increased in stages at intervals of less than 0.11 MeV up to a predetermined maximum energy. (UK)

  9. NREL photovoltaic program FY 1997 annual report

    Energy Technology Data Exchange (ETDEWEB)

    McConnell, R.D.; Hansen, A.; Smoller, S.

    1998-06-01

    This report summarizes the in-house and subcontracted research and development (R and D) activities under the NREL PV Program from October 1, 1996, through September 30, 1997 (FY 1997). The NREL PV Program is part of the US Department of Energy`s (DOE`s) National Photovoltaics Program, as described in the DOE National Photovoltaics Program Plan for 1996--2000. The FY 1997 budget authority for carrying out the NREL PV Program was $39.3 million in operating funds and $0.4 million in capital equipment funds. Subcontract activities represent a major part of the NREL PV Program, with $21.8 million (55% of PV funds) going to some 84 subcontractors. Cost sharing by industry added almost $8.8 million to the subcontract R and D activities with industry.

  10. OPENING ADDRESS: Heterostructures in Semiconductors

    Science.gov (United States)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  11. Life-cycle assessment of semiconductors

    CERN Document Server

    Boyd, Sarah B

    2012-01-01

    Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

  12. Semiconductor applications of plasma immersion ion implantation ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 25; Issue 6. Semiconductor applications of plasma immersion ion implantation technology ... Department of Electronic Science, Kurukshetra University, Kurukshetra 136 119, India ...

  13. Second harmonic spectroscopy of semiconductor nanostructures

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Yu, Ping; Bozhevolnyi, Sergey I.

    1999-01-01

    Semiconductor nanostructures and their application to optoelectronic devices have attracted much attention recently. Lower-dimensional structures, and in particular quantum dots, are highly anisotropic resulting in broken symmetry as compared to their bulk counterparts. This is not only reflected...

  14. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  15. Semiconductors detectors: basics principals, fabrication and repair

    International Nuclear Information System (INIS)

    Souza Coelho, L.F. de.

    1982-05-01

    The fabrication and repairing techniques of semiconductor detectors, are described. These methods are shown in the way they are applied by the semiconductor detector laboratory of the KFA-Julich, where they have been developed during the last 15 years. The history of the semiconductor detectors is presented here, being also described the detector fabrication experiences inside Brazil. The key problems of manufacturing are raised. In order to understand the fabrication and repairing techniques the working principles of these detectors, are described. The cases in which worked during the stay in the KFA-Julich, particularly the fabrication of a plane Ge (Li) detector, with side entry, and the repair of a coaxial Ge (Li) is described. The vanguard problems being researched in Julich are also described. Finally it is discussed a timetable for the semiconductor detector laboratory of the UFRJ, which laboratory is in the mounting stage now. (Author) [pt

  16. Photocatalytic semiconductors synthesis, characterization, and environmental applications

    CERN Document Server

    Hernández-Ramírez, Aracely

    2014-01-01

    This critical volume examines the different methods used for the synthesis of a great number of photocatalysts, including TiO2, ZnO and other modified semiconductors, as well as characterization techniques used for determining the optical, structural and morphological properties of the semiconducting materials. Additionally, the authors discuss photoelectrochemical methods for determining the light activity of the photocatalytic semiconductors by means of measurement of properties such as band gap energy, flat band potential and kinetics of hole and electron transfer. Photocatalytic Semiconductors: Synthesis, Characterization and Environmental Applications provide an overview of the semiconductor materials from first- to third-generation photocatalysts and their applications in wastewater treatment and water disinfection. The book further presents economic and toxicological aspects in the production and application of photocatalytic materials.

  17. Analysis and simulation of semiconductor devices

    CERN Document Server

    Selberherr, Siegfried

    1984-01-01

    The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the s...

  18. Semiconductor-nanocrystal/conjugated polymer thin films

    Science.gov (United States)

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  19. Advances in semiconductor photodetectors for scintillators

    International Nuclear Information System (INIS)

    Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

    1997-01-01

    Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

  20. Semiconductor Photonic Components for RF Applications

    National Research Council Canada - National Science Library

    Yu, Paul

    2002-01-01

    ... time delay beam formation and beam steering subsystem in phased array antennas. Device and material approaches were investigated to improve the modulator based on semiconductor structures for achieving high spur free dynamic range (SFDR...

  1. Semiconductor Photonic Components for RF Applications

    National Research Council Canada - National Science Library

    Yu, Paul

    2001-01-01

    ... delay beam formation and beam steering subsystems in phased array antennas. Device and material approaches were investigated to improve the modulator based on semiconductor structures for achieving high spur free dynamic range (SFDR...

  2. Room-temperature ductile inorganic semiconductor

    Science.gov (United States)

    Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

    2018-05-01

    Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

  3. X-ray absorption spectroscopy of semiconductors

    CERN Document Server

    Ridgway, Mark

    2015-01-01

    X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

  4. Revenue sharing in semiconductor industry supply chain ...

    Indian Academy of Sciences (India)

    to reduce demand opportunities, inventory needs and production efficiencies, in addition to reducing .... design based on coalition structures in semiconductor supply chain. ..... supplier/contract manufacturer for a product/component category.

  5. Small-signal analysis of granular semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey, E-mail: aapo.varpula@tkk.f [Department of Micro and Nanosciences, Aalto University, PO Box 13500, FI-00076 Aalto, Espoo (Finland)

    2010-11-01

    The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

  6. Small-signal analysis of granular semiconductors

    International Nuclear Information System (INIS)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey

    2010-01-01

    The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

  7. Nitride semiconductor devices fundamentals and applications

    CERN Document Server

    Morkoç, Hadis

    2013-01-01

    This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

  8. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

  9. Semiconductor saturable absorbers for ultrafast THz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths.......We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths....

  10. Work on the ATLAS semiconductor tracker barrel

    CERN Multimedia

    Maximilien Brice

    2005-01-01

    Precision work is performed on the semiconductor tracker barrel of the ATLAS experiment. All work on these delicate components must be performed in a clean room so that impurities in the air, such as dust, do not contaminate the detector. The semiconductor tracker will be mounted in the barrel close to the heart of the ATLAS experiment to detect the path of particles produced in proton-proton collisions.

  11. Diffusion in semiconductors, other than silicon compilation

    CERN Document Server

    Fisher, David J

    2011-01-01

    Review from Book News Inc.: Summary reports of 337 experiments provide information on the diffusion of matter and heat in 31 materials used in semiconductors. Most of the compounds are based on cadmium, gallium, indium, lead, and zinc. Mercury telluride is included however, as is silicon carbide for some reason. Each article is thoroughly referenced to the authors and publication number, date, and page. The arrangement is alphabetical by semiconductor material. Indexes cover authors, hosts, and diffusants.

  12. Subcontracting relations and their effects on safety and security in two firms: SNCF and GrDF; Les relations de sous-traitance et leurs effets sur la surete et la securite dans deux entreprises: SNCF et GrDF

    Energy Technology Data Exchange (ETDEWEB)

    Ponnet, Marie

    2011-07-04

    Because of economical processes that tend to move the frontiers of firms salaried relations of uncertain status are found coexisting inside the very same working world. From a qualitative investigation mixing employees' interviews and observations made on SNCF and GrDF working sites our research offers to think about the relations linking subcontracting, maintenance, safety and security. Considering subcontracting as a particular way for professional bodies to be associated allows us to wonder about its effects within a same firm (the 'integrated' subcontracting) as much as between a principal and a provider. Our thesis shows that when change occurs inside the organization - like the creation of new committees of experts or the reorganizing of an old service - security and safety can be impacted because thus professional bodies tend to be reconfigured while modifications affect practices, professional identities and work division. The relations between subcontractors and principal are complicated and their consequences depend from the context they are placed in, determined by a combination of various characteristics such as the confidence level, the available time, the reputation, the position occupied by the subcontractor. Our investigation makes clear that there is no direct link between subcontracting, security and safety. Their effects, in spite of their reality, are submitted to the altering mediation of legal factors (related to economic national and European issues) and concern the working organization as well as the professional identities. (author)

  13. Semiconductor high-energy radiation scintillation detector

    International Nuclear Information System (INIS)

    Kastalsky, A.; Luryi, S.; Spivak, B.

    2006-01-01

    We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

  14. Charge regulation at semiconductor-electrolyte interfaces.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2015-07-01

    The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

  15. Novel routes to nanodispersed semiconductors

    International Nuclear Information System (INIS)

    Green, M.A.

    1999-01-01

    Novel synthetic routes to nanodispersed compound semiconductors using organometallic precursors have been developed. The quantum dots have been studied by optical absorption spectroscopy, photoluminescence spectroscopy, transmission electron microscopy, high resolution transmission electron microscopy, infra red spectroscopy and nuclear magnetic resonance. Polar Lewis base solvents such as tri-n-octylphosphine oxide and 4-ethylpyridine were utilized as both passivating agent and dispersing medium. In the the search for new solvent systems and passivating agents, and investigation was also made into the use of dimethyl sulfoxide as a reaction solvent and capping agent in the preparation of nanocrystalline CdS. Existing routes using metal alkyls and silylated precursors in hot TOPO were improved by substituting the metal alkyl with an metal alkyl adduct. Cadmium monothiocarbamate and a related precursor, cadmium thioacetate were investigated as possible single source precursors to nanometer sized CdS. The thermolysis of diorganophosphides in the Lewis bases coordinating solvent (4-ethylpridine) has been investigated, including studies of decompositon mechanisms, and quantum dots of Cd 3 P 2 , Zn 3 P 2 , Inp and GaP have been prepared. The synthesis of InAs using the metal chloride and an aminoarsenide precursor in 4-ethylpridine has also been developed. A simple method for the organization of III-V materials into glass like aggregates has been described. (author)

  16. Quantum transport in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kubis, Tillmann Christoph

    2009-11-15

    The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function method (NEGF) is a very general and all-inclusive scheme for the description of exactly this kind of transport problem. Although the NEGF formalism has been derived in the 1960's, textbooks about this formalism are still rare to find. Therefore, we introduce the NEGF formalism, its fundamental equations and approximations in the first part of this thesis. Thereby, we extract ideas of several seminal contributions on NEGF in literature and augment this by some minor derivations that are hard to find. Although the NEGF method has often been numerically implemented on transport problems, all current work in literature is based on a significant number of approximations with often unknown influence on the results and unknown validity limits. Therefore, we avoid most of the common approximations and implement in the second part of this thesis the NEGF formalism as exact as numerically feasible. For this purpose, we derive several new scattering self-energies and introduce new self-adaptive discretizations for the Green's functions and self-energies. The most important improvements of our NEGF implementation, however, affect the momentum and energy conservation during incoherent scattering, the Pauli blocking, the current conservation within and beyond the device and the reflectionless propagation through open device boundaries. Our uncommonly accurate implementation of the NEGF method allows us to analyze and assess most of the common approximations and to unveil numerical artifacts that have plagued previous approximate implementations in literature. Furthermore, we apply our numerical implementation of the NEGF method on the stationary electron transport in THz quantum cascade lasers (QCLs) and answer

  17. Self Organization in Compensated Semiconductors

    Science.gov (United States)

    Berezin, Alexander A.

    2004-03-01

    In partially compensated semiconductor (PCS) Fermi level is pinned to donor sub-band. Due to positional randomness and almost isoenergetic hoppings, donor-spanned electronic subsystem in PCS forms fluid-like highly mobile collective state. This makes PCS playground for pattern formation, self-organization, complexity emergence, electronic neural networks, and perhaps even for origins of life, bioevolution and consciousness. Through effects of impact and/or Auger ionization of donor sites, whole PCS may collapse (spinodal decomposition) into microblocks potentially capable of replication and protobiological activity (DNA analogue). Electronic screening effects may act in RNA fashion by introducing additional length scale(s) to system. Spontaneous quantum computing on charged/neutral sites becomes potential generator of informationally loaded microstructures akin to "Carl Sagan Effect" (hidden messages in Pi in his "Contact") or informational self-organization of "Library of Babel" of J.L. Borges. Even general relativity effects at Planck scale (R.Penrose) may affect the dynamics through (e.g.) isotopic variations of atomic mass and local density (A.A.Berezin, 1992). Thus, PCS can serve as toy model (experimental and computational) at interface of physics and life sciences.

  18. Photoemission studies of semiconductor nanocrystals

    International Nuclear Information System (INIS)

    Hamad, K.S.; Roth, R.; Alivisatos, A.P.

    1997-01-01

    Semiconductor nanocrystals have been the focus of much attention in the last ten years due predominantly to their size dependent optical properties. Namely, the band gap of nanocrystals exhibits a shift to higher energy with decreasing size due to quantum confinement effects. Research in this field has employed primarily optical techniques to study nanocrystals, and in this respect this system has been investigated extensively. In addition, one is able to synthesize monodisperse, crystalline particles of CdS, CdSe, Si, InP, InAs, as well as CdS/HgS/CdS and CdSe/CdS composites. However, optical spectroscopies have proven ambiguous in determining the degree to which electronic excitations are interior or surface admixtures or giving a complete picture of the density of states. Photoemission is a useful technique for understanding the electronic structure of nanocrystals and the effects of quantum confinement, chemical environments of the nanocrystals, and surface coverages. Of particular interest to the authors is the surface composition and structure of these particles, for they have found that much of the behavior of nanocrystals is governed by their surface. Previously, the authors had performed x-ray photoelectron spectroscopy (XPS) on CdSe nanocrystals. XPS has proven to be a powerful tool in that it allows one to determine the composition of the nanocrystal surface

  19. Spin Transport in Semiconductor heterostructures

    International Nuclear Information System (INIS)

    Marinescu, Domnita Catalina

    2011-01-01

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  20. Faraday effect in semimagnetic semiconductors

    International Nuclear Information System (INIS)

    Nikitin, P.I.; Savchuk, A.I.

    1990-01-01

    Experimental and theoretical studies of the Faraday effect in a new class of materials -semimagnetic semiconductors (SS) have been received. Mechanisms of the giant Faraday effect in SS based on s, p-d exchange interaction of excitons, electrons and holes with magnetic ions have been discussed. Faraday rotation as a function of a radiation wavelength, magnetic component concentration, temperature, magnetic field intensity for crystals A 2 B 6 (Mn)A 2 x -1Mn xB 6 : and other SS (GaAs(Mn), CdP 2 (Mn),Pb 1-X2 )Mn x J 2 have been considered. We have attended to use FR for the study of a paramagnetic-spin glass transmission for determining the role of the relaxation effects with a participation of magnetic Mn 2+ ions, exitons, polarons in the direct and inverse Faraday effects. In addition the features of FR in thin films of SS and in spin superlattices have been discussed. Finally, we have analysed possibilities of applying the SS Faraday effect for developing magnetooptic devices (optical isolators and fibre optic sensors of magnetic fields)

  1. Paul Scherrer Institut annual report 1996. Annex IIIB: applied solid state physics

    Energy Technology Data Exchange (ETDEWEB)

    Kuse, D. [ed.] [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    The annual report presents F3B highlights and reports on progress achieved during 1966 in the field of nanotechnology, semiconductor quantum structure, optoelectronic devices, micro- and integrated optics, optical metrology, new installations. A list of publications is also presented. figs., tabs., refs.

  2. Paul Scherrer Institut annual report 1996. Annex IIIB: applied solid state physics

    International Nuclear Information System (INIS)

    Kuse, D.

    1997-01-01

    The annual report presents F3B highlights and reports on progress achieved during 1966 in the field of nanotechnology, semiconductor quantum structure, optoelectronic devices, micro- and integrated optics, optical metrology, new installations. A list of publications is also presented. figs., tabs., refs

  3. Disorder phenomena in covalent semiconductors

    International Nuclear Information System (INIS)

    Popescu, M.A.

    1975-01-01

    The structure of the amorphous semiconductors has been investigated by means of X-ray diffraction and by computer simulation of random network models. Amorphous germanium contains mainly five and six-membered rings of atoms. In glassy state, the ternary compounds A 2 B 4 C 2 5 , such as CdGeAs 2 contain only even rings of atoms (six-membered and eight-membered rings). In the memory glasses of the type A 2 B 4 C 2 5 , such as GeAs 2 Te 7 , the valency state of every element is that from the crystal and important van der Waals forces are effective in the network. No Ge-Ge, Ge-As and As-As bonds are formed. The high pressure forms of the germanium have been simulated by computer. The force constants of the covalent bonds in Ge III and Ge IV differ from those in Ge I. The bond bending force constant decreases rapidly when the density of the crystal increases, a fact which has been imparted to a reduction of the sp 3 hybridization. The compressibility curve of the Ge I has been explained. The effect of the radial and uniaxial deformation on the non-crystalline networks has been studied. The compressibility of the amorphous germanium is by 1.5 per cent greater than that of crystalline germanium. The Poisson coefficient for a-Ge network is 0.233. The structure of the As 2 S 3 glass doped with different amounts of germanium (up to 40 at. per cent) and silver (up to 12 at. per cent) has been investigated. The As 2 S 3 Gesub(x) compositions are constituted from a disordered packing of structural units whose chemical composition and relative proportion in the glass essentially depends on the germanium content. (author)

  4. Extracting hot carriers from photoexcited semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  5. Controlling Molecular Doping in Organic Semiconductors.

    Science.gov (United States)

    Jacobs, Ian E; Moulé, Adam J

    2017-11-01

    The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Annual report 1973

    International Nuclear Information System (INIS)

    1973-01-01

    The GKSS scientific annual report summarizes the problems and results of the research and development projects of 1973. In contrast to earlier annual reports, a comprehensive description of the research facilities is not included. The annual report was extended by the paragraph 'Financial Report 1973' in the chapter 'Development of Geesthacht Research Centre'. The financial report gives a survey of the financial transactions and the major operations of the year under review. (orig./AK) [de

  7. Selective photochemical dry etching of compound semiconductors

    International Nuclear Information System (INIS)

    Ashby, C.I.H.

    1988-01-01

    When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

  8. Positron annihilation and Wheeler complexes in semiconductors

    International Nuclear Information System (INIS)

    Prokop'ev, E.P.

    1995-01-01

    Properties of Ps-Ex (positron-exciton) complex nature Wheeler complexes that may be formed at irradiation of semiconductors and ion crystals by positrons at low temperature under conditions of optical excitation by excitons are studied. Binding energy of similar and more complex systems regarding decomposition in Ps and Ex and/or Ex ± exceeds, at least, 0.1 eV, while lifetime regarding biquantum-self-annihilation constitutes τ 2γ ∼5.02x10 - 10 κ c 3 c (κ c -phenomenological parameter of the effective mass method). The lifetime estimations enabled to conclude that Ps-Ex complexes may be detected in some oxide semiconductors, in zinc sulfide, as well as, in alkaline-haloid crystals. At the same time, in silicon, gallium arsenide and in other semiconductors of A 3 B 5 and A 2 B 6 it is highly improbable to observe these complexes. 27 refs

  9. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  10. Fabrication and application of amorphous semiconductor devices

    International Nuclear Information System (INIS)

    Kumurdjian, Pierre.

    1976-01-01

    This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

  11. Long wave polar modes in semiconductor heterostructures

    CERN Document Server

    Trallero-Giner, C; García-Moliner, F; Garc A-Moliner, F; Perez-Alvarez, R; Garcia-Moliner, F

    1998-01-01

    Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor heterostructures from a phenomenological approach and aims to simplify the model of lattice dynamics calculations. The book provides useful tools for performing calculations relevant to anyone who might be interested in practical applications. The main focus of Long Wave Polar Modes in Semiconductor Heterostructures is planar heterostructures (quantum wells or barriers, superlattices, double barrier structures etc) but there is also discussion on the growing field of quantum wires and dots. Also to allow anyone reading the book to apply the techniques discussed for planar heterostructures, the scope has been widened to include cylindrical and spherical geometries. The book is intended as an introductory text which guides the reader through basic questions and expands to cover state-of-the-art professional topics. The book is relevant to experimentalists wanting an instructive presentatio...

  12. Slow and fast light in semiconductor waveguides

    DEFF Research Database (Denmark)

    Mørk, Jesper; Hansen, Per Lunnemann; Xue, Weiqi

    2010-01-01

    Investigations of slow and fast light effects in semiconductor waveguides entail interesting physics and point to a number of promising applications. In this review we give an overview of recent progress in the field, in particular focusing on the physical mechanisms of electromagnetically induced...... transparency and coherent population oscillations. While electromagnetically induced transparency has been the most important effect in realizing slowdown effects in atomic gasses, progress has been comparatively slow in semiconductors due to inherent problems of fast dephasing times and inhomogeneous...... broadening in quantum dots. The physics of electromagnetically induced transparency in semiconductors is discussed, emphasizing these limitations and recent suggestions for overcoming them. On the other hand, the mechanism of coherent population oscillations relies on wave mixing effects and is well suited...

  13. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2010-01-01

    This fourth edition of the well-established Fundamentals of Semiconductors serves to fill the gap between a general solid-state physics textbook and research articles by providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. The approach is physical and intuitive rather than formal and pedantic. Theories are presented to explain experimental results. This textbook has been written with both students and researchers in mind. Its emphasis is on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. The explanations are based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures, and problems. Many of these problems "lead the student by the hand" to arrive at the results. The major changes made in the fourth edition include: an extensive appendix about the important and by now well-established deep center known as the DX center, additional problems...

  14. Semiconductor materials for solar photovoltaic cells

    CERN Document Server

    Wong-Ng, Winnie; Bhattacharya, Raghu

    2016-01-01

    This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing.  Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost.  Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce ...

  15. Hybrid system of semiconductor and photosynthetic protein

    International Nuclear Information System (INIS)

    Kim, Younghye; Shin, Seon Ae; Lee, Jaehun; Yang, Ki Dong; Nam, Ki Tae

    2014-01-01

    Photosynthetic protein has the potential to be a new attractive material for solar energy absorption and conversion. The development of semiconductor/photosynthetic protein hybrids is an example of recent progress toward efficient, clean and nanostructured photoelectric systems. In the review, two biohybrid systems interacting through different communicating methods are addressed: (1) a photosynthetic protein immobilized semiconductor electrode operating via electron transfer and (2) a hybrid of semiconductor quantum dots and photosynthetic protein operating via energy transfer. The proper selection of materials and functional and structural modification of the components and optimal conjugation between them are the main issues discussed in the review. In conclusion, we propose the direction of future biohybrid systems for solar energy conversion systems, optical biosensors and photoelectric devices. (topical reviews)

  16. Semiconductor laser using multimode interference principle

    Science.gov (United States)

    Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

    2018-01-01

    Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

  17. Developing New Nanoprobes from Semiconductor Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua [Univ. of California, Berkeley, CA (United States)

    2006-01-01

    In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.

  18. Optical Biosensors Based on Semiconductor Nanostructures

    Directory of Open Access Journals (Sweden)

    Raúl J. Martín-Palma

    2009-06-01

    Full Text Available The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented.

  19. Reliability and radiation effects in compound semiconductors

    CERN Document Server

    Johnston, Allan

    2010-01-01

    This book discusses reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. Johnston's perspective in the book focuses on high-reliability applications in space, but his discussion of reliability is applicable to high reliability terrestrial applications as well. The book is important because there are new reliability mechanisms present in compound semiconductors that have produced a great deal of confusion. They are complex, and appear to be major stumbling blocks in the application of these types of devices. Many of the reliability problems that were prominent research topics five to ten years ago have been solved, and the reliability of many of these devices has been improved to the level where they can be used for ten years or more with low failure rates. There is also considerable confusion about the way that space radiation affects compound semiconductors. Some optoelectronic devices are so sensitive to damage in space that they are very difficu...

  20. NUKEM annual report 1981

    International Nuclear Information System (INIS)

    The annual report of this important undertaking in the German nuclear industry informs about its structure, holdings and activities in 1981. The report of the management is followed by remarks on the annual statement of accounts (annual balance, profit-loss accounting) and the report of the Supervisory Board. In the annex the annual balance of NUKEM GmbH/HOBEG mbH as per December 31, 1981, and the profit-loss accounting of NUKEM GmbH/HOBEG mbH for the business year 1981 are presented. (UA) [de

  1. Annual Statistical Supplement, 2002

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2002 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  2. Annual Statistical Supplement, 2010

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2010 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  3. Annual Statistical Supplement, 2007

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2007 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  4. Annual Statistical Supplement, 2001

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2001 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  5. Annual Statistical Supplement, 2016

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2016 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  6. Annual Statistical Supplement, 2011

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2011 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  7. Annual Statistical Supplement, 2005

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2005 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  8. Annual Statistical Supplement, 2015

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2015 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  9. Annual Statistical Supplement, 2003

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2003 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  10. Annual Statistical Supplement, 2017

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2017 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  11. Annual Statistical Supplement, 2008

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2008 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  12. Annual Statistical Supplement, 2014

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2014 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  13. Annual Statistical Supplement, 2004

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2004 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  14. Annual Statistical Supplement, 2000

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2000 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  15. Annual Statistical Supplement, 2009

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2009 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  16. Annual Statistical Supplement, 2006

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2006 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  17. Temperature dependent electronic conduction in semiconductors

    International Nuclear Information System (INIS)

    Roberts, G.G.; Munn, R.W.

    1980-01-01

    This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

  18. Blasting detonators incorporating semiconductor bridge technology

    Energy Technology Data Exchange (ETDEWEB)

    Bickes, R.W. Jr.

    1994-05-01

    The enormity of the coal mine and extraction industries in Russia and the obvious need in both Russia and the US for cost savings and enhanced safety in those industries suggests that joint studies and research would be of mutual benefit. The author suggests that mine sites and well platforms in Russia offer an excellent opportunity for the testing of Sandia`s precise time-delay semiconductor bridge detonators, with the potential for commercialization of the detonators for Russian and other world markets by both US and Russian companies. Sandia`s semiconductor bridge is generating interest among the blasting, mining and perforation industries. The semiconductor bridge is approximately 100 microns long, 380 microns wide and 2 microns thick. The input energy required for semiconductor bridge ignition is one-tenth the energy required for conventional bridgewire devices. Because semiconductor bridge processing is compatible with other microcircuit processing, timing and logic circuits can be incorporated onto the chip with the bridge. These circuits can provide for the precise timing demanded for cast effecting blasting. Indeed tests by Martin Marietta and computer studies by Sandia have shown that such precise timing provides for more uniform rock fragmentation, less fly rock, reduce4d ground shock, fewer ground contaminants and less dust. Cost studies have revealed that the use of precisely timed semiconductor bridges can provide a savings of $200,000 per site per year. In addition to Russia`s vast mineral resources, the Russian Mining Institute outside Moscow has had significant programs in rock fragmentation for many years. He anticipated that collaborative studies by the Institute and Sandia`s modellers would be a valuable resource for field studies.

  19. Semiconductor saturable absorbers for ultrafast terahertz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2010-01-01

    states, due to conduction band onparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and nonsaturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse......We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum...

  20. α-particle shielding of semiconductor device

    International Nuclear Information System (INIS)

    McKeown, P.J.A.; Perry, J.P.; Waddell, J.M.; Barker, K.D.

    1981-01-01

    Soft errors in semiconductor devices, e.g. random access memories, arising from the bombardment of the device by alpha particles produced by the disintegration of minute traces of uranium or thorium in the packaging materials are prevented by coating the active surface of the semiconductor chip with a thin layer, e.g. 20 to 100 microns of an organic polymeric material, this layer being of sufficient thickness to absorb the particles. Typically, the polymer is a poly-imide formed by u.v. electron-beam or thermal curing of liquid monomer applied to the chip surface. (author)

  1. Optically induced Hall effect in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Idrish Miah, M; Gray, E Mac A, E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

    2009-03-01

    We describe an experiment which investigates the effect of a longitudinal electric field on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a Hall voltage resulting from nonequilibrium magnetization induced by the spin-carrier electrons accumulating at the transverse boundaries of the sample as a result of asymmetries in scattering for spin-up and spin-down electrons in the presence of spin-orbit interaction. It is found that the effect depends on the longitudinal electric field and doping density as well as on temperature. The results are presented by discussing the dominant spin relaxation mechanisms in semiconductors.

  2. Ion implantation in semiconductors and other materials

    International Nuclear Information System (INIS)

    Guernet, G.; Bruel, M.; Gailliard, J.P.; Garcia, M.; Robic, J.Y.

    1977-01-01

    The evolution of ion implantation techniques in the field of semiconductors and its extension to various fields such as metallurgy, mechanics, superconductivity and opto-electronics are considered. As for semiconductors ion implantation is evoked as: a means of predeposition of impurities at low doping level (10 11 to 10 14 cm -2 ); a means for obtaining profiles of controlled concentration; a means of reaching high doping levels with using 'strong current' implantation machines of the second generation. Some results obtained are presented [fr

  3. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

    1988-01-01

    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

  4. Optical Regeneration and Noise in Semiconductor Devices

    DEFF Research Database (Denmark)

    Öhman, Filip

    2005-01-01

    In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R-regenerator......In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R...

  5. Reduced filamentation in high power semiconductor lasers

    DEFF Research Database (Denmark)

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

    1999-01-01

    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

  6. Offshoring in the Semiconductor Industry: Historical Perspectives

    OpenAIRE

    Brown, Clair; Linden, Greg

    2005-01-01

    Semiconductor design is a frequently-cited example of the new wave of offshoring and foreign-outsourcing of service sector jobs. It is certainly a concern to U.S. design engineers themselves. In addition to the current wave of white-collar outsourcing, the industry also has a rich experience with offshoring of manufacturing activity. Semiconductor companies were among the first to invest in offshore facilities to manufacture goods for imports back to the U.S. A brief review of these earlie...

  7. Cryogenic semiconductor high-intensity radiation monitors

    International Nuclear Information System (INIS)

    Palmieri, V.G.; Bell, W.H.; Borer, K.; Casagrande, L.; Da Via, C.; Devine, S.R.H.; Dezillie, B.; Esposito, A.; Granata, V.; Hauler, F.; Jungermann, L.; Li, Z.; Lourenco, C.; Niinikoski, T.O.; Shea, V. O'; Ruggiero, G.; Sonderegger, P.

    2003-01-01

    This paper describes a novel technique to monitor high-intensity particle beams by means of a semiconductor detector. It consists of cooling a semiconductor detector down to cryogenic temperature to suppress the thermally generated leakage current and to precisely measure the integrated ionization signal. It will be shown that such a device provides very good linearity and a dynamic range wider than is possible with existing techniques. Moreover, thanks to the Lazarus effect, extreme radiation hardness can be achieved providing in turn absolute intensity measurements against precise calibration of the device at low beam flux

  8. Solid state semiconductor detectorized survey meter

    International Nuclear Information System (INIS)

    Okamoto, Eisuke; Nagase, Yoshiyuki; Furuhashi, Masato

    1987-01-01

    Survey meters are used for measurement of gamma ray dose rate of the space and the surface contamination dencity that the atomic energy plant and the radiation facility etc. We have recently developed semiconductor type survey meter (Commercial name: Compact Survey Meter). This survey meter is a small-sized dose rate meter with excellent function. The special features are using semiconductor type detector which we have developed by our own technique, stablar wide range than the old type, long life, and easy to carry. Now we introduce the efficiency and the function of the survey meter. (author)

  9. Laser vapor phase deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

    1987-06-01

    The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

  10. III-V semiconductor materials and devices

    CERN Document Server

    Malik, R J

    1989-01-01

    The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

  11. Ion implantation methods for semiconductor substrates

    International Nuclear Information System (INIS)

    Matsushita, T.; Mamine, T.; Hayashi, H.; Nishiyama, K.

    1980-01-01

    A method of ion implantation for controlling the life time of minority carriers in a semiconductor substrate and hence to reduce the temperature dependency of the life time, comprises implanting iron ions into an N type semiconductor substrate with a dosage of 10 10 to 10 15 ions cm -2 , and then heat-treating the implanted substrate at 850 0 to 1250 0 C. The method is applicable to the production of diodes, transistors, Si controlled rectifiers and gate controlled switching devices. (author)

  12. Electroplated Ni on the PN Junction Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-05-15

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm{sup 2}. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased.

  13. Electroplated Ni on the PN Junction Semiconductor

    International Nuclear Information System (INIS)

    Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae

    2015-01-01

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm 2 . The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased

  14. Some aspects of ion implantation in semiconductors

    International Nuclear Information System (INIS)

    Klose, H.

    1982-01-01

    The advantages and disadvantages of ion implantation in the application of semiconductor technology are reviewed in short. This article describes some aspects of the state of the art and current developments of nonconventional annealing procedures, ion beam gettering of deep impurities, special applications of ion implantation using low or high energy ions and GaAs-electronics, respectively. Radiation defects in Si and the nonexponential emission and capture processes in GaAsP are discussed. Final future trends of ion beam methods in semiconductor production technology are summarized. (author)

  15. Carrier scattering in metals and semiconductors

    CERN Document Server

    Gantmakher, VF

    1987-01-01

    The transport properties of solids, as well as the many optical phenomena in them are determined by the scattering of current carriers. ``Carrier Scattering in Metals and Semiconductors'' elucidates the state of the art in the research on the scattering mechanisms for current carriers in metals and semiconductors and describes experiments in which these mechanisms are most dramatically manifested.The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental

  16. Research and Development Annual Report, 1992

    Science.gov (United States)

    1993-01-01

    Issued as a companion to Johnson Space Center's Research and Technology Annual Report, which reports JSC accomplishments under NASA Research and Technology Operating Plan (RTOP) funding, this report describes 42 additional JSC projects that are funded through sources other than the RTOP. Emerging technologies in four major disciplines are summarized: space systems technology, medical and life sciences, mission operations, and computer systems. Although these projects focus on support of human spacecraft design, development, and safety, most have wide civil and commercial applications in areas such as advanced materials, superconductors, advanced semiconductors, digital imaging, high density data storage, high performance computers, optoelectronics, artificial intelligence, robotics and automation, sensors, biotechnology, medical devices and diagnosis, and human factors engineering.

  17. Department of Thermonuclear Research annual report 1991

    Energy Technology Data Exchange (ETDEWEB)

    Sadowski, M; Pawlowicz, W [eds.

    1992-02-01

    Department of Thermonuclear Research Annual Report 1991 presents a short review of theoretical, experimental, and technological studies carried out within the framework of two research programs: Plasma Physics and Development of Diagnostics Data Acquisition. Theoretical studies of a tokamak edge plasma, validity of inverse Abel transformation for strongly refracting objects, simulation of the pulse generators operation, and a numerical analysis of electron capture in p + H{sup +} collisions, are described. Experimental studies of corpuscular beams and X-rays from different plasma facilities, development of diagnostic techniques and of data acquisition systems, as well as experiments with the generation of cryogenic pellets for plasma research, are shortly summarized. Also presented are technological studies concerning the modernization of the PF- and RPI-type facilities and the application of the IONOTRON-type devices for the modification of semiconductor and metal surfaces. (author). 27 refs, 24 figs.

  18. Annual report 1998; Rapport annuel 1998

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-07-01

    Associated to the CEA, the CEA-Industry subsidiaries and the whole Group submit a very satisfying financial, economic and technological accounting which able to play a major role in international cooperations and to satisfy the shareholders. To illustrate these results, this annual report presents the activities of the CEA-Industry group during the year 1998. It is divided in eight chapters. The first six chapters gives general information and main financial data on respectively the CEA-Industry Group profile, economics, the fuel cycle, the nuclear power plants, the nuclear medicine and the semiconductors. The chapter 7 deals with the financial results of the fiscal year 1998 and the last chapter is devoted to the management report of the administration council. (A.L.B.)

  19. Department of Thermonuclear Research annual report 1991

    International Nuclear Information System (INIS)

    Sadowski, M.; Pawlowicz, W.

    1992-02-01

    Department of Thermonuclear Research Annual Report 1991 presents a short review of theoretical, experimental, and technological studies carried out within the framework of two research programs: Plasma Physics and Development of Diagnostics Data Acquisition. Theoretical studies of a tokamak edge plasma, validity of inverse Abel transformation for strongly refracting objects, simulation of the pulse generators operation, and a numerical analysis of electron capture in p + H + collisions, are described. Experimental studies of corpuscular beams and X-rays from different plasma facilities, development of diagnostic techniques and of data acquisition systems, as well as experiments with the generation of cryogenic pellets for plasma research, are shortly summarized. Also presented are technological studies concerning the modernization of the PF- and RPI-type facilities and the application of the IONOTRON-type devices for the modification of semiconductor and metal surfaces. (author). 27 refs, 24 figs

  20. Surface passivation process of compound semiconductor material using UV photosulfidation

    Science.gov (United States)

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  1. Modeling High Frequency Semiconductor Devices Using Maxwell's Equations

    National Research Council Canada - National Science Library

    El-Ghazaly, Samier

    1999-01-01

    .... In this research, we first replaced the conventional semiconductor device models, which are based on Poisson's Equation as a semiconductor model, with a new one that uses the full-wave electro...

  2. Semiconductor plasmonic crystals : active control of THz extinction

    NARCIS (Netherlands)

    Schaafsma, M.C.; Gomez Rivas, J.

    2013-01-01

    We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are

  3. Structures and electronics of buried and unburied semiconductor interfaces

    International Nuclear Information System (INIS)

    Kamiya, Itaru

    2011-01-01

    The structure of interfaces plays an important role in determining the electronic properties of semiconductor nanostructures. Here, such examples are shown and discussed using semiconductor nanostructures prepared by molecular beam epitaxy and colloidal synthesis.

  4. Near-infrared light emitting device using semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon; Correa, Raoul Emile; Shirasaki, Yasuhiro; Bawendi, Moungi G.; Bulovic, Vladimir; Scherer, Jennifer

    2018-04-03

    A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

  5. Elementary steps in electrical doping of organic semiconductors

    KAUST Repository

    Tietze, Max Lutz; Benduhn, Johannes; Pahner, Paul; Nell, Bernhard; Schwarze, Martin; Kleemann, Hans; Krammer, Markus; Zojer, Karin; Vandewal, Koen; Leo, Karl

    2018-01-01

    Fermi level control by doping is established since decades in inorganic semiconductors and has been successfully introduced in organic semiconductors. Despite its commercial success in the multi-billion OLED display business, molecular doping

  6. Progress in semiconductor laser diodes: SPIE volume 723

    International Nuclear Information System (INIS)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  7. Is There a Better Semiconductor Firm in Taiwan?

    Directory of Open Access Journals (Sweden)

    Cheng-Wen LEE

    2017-06-01

    Full Text Available The authors investigate the firm value of semiconductor industry in Taiwan in order to differentiate between outstanding semiconductor company and weak semiconductor company. The authors use GAP which is analytical tool to perform four steps: the original maps, sorting maps with clustering trees, summary sufficient maps, and sediment maps. The findings offer a good instruction for policymakers to make related policies in semiconductor firms. Additionally, the paper helps to find firms needed to be reformed through classification by GAP.

  8. Injection of spin-polarized current into semiconductor

    International Nuclear Information System (INIS)

    Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

    2003-01-01

    A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

  9. CSIR Annual report 1965

    CSIR Research Space (South Africa)

    CSIR

    1965-01-01

    Full Text Available stream_source_info Annual Report_ 1965.pdf.txt stream_content_type text/plain stream_size 48 Content-Encoding ISO-8859-1 stream_name Annual Report_ 1965.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  10. CSIR Annual report 1992

    CSIR Research Space (South Africa)

    CSIR

    1992-01-01

    Full Text Available stream_source_info Annual Report_ 1992.pdf.txt stream_content_type text/plain stream_size 39 Content-Encoding ISO-8859-1 stream_name Annual Report_ 1992.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  11. CSIR Annual report 1979

    CSIR Research Space (South Africa)

    CSIR

    1979-01-01

    Full Text Available stream_source_info CSIR Annual report_1979.pdf.txt stream_content_type text/plain stream_size 86 Content-Encoding ISO-8859-1 stream_name CSIR Annual report_1979.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  12. CSIR Annual report 1976

    CSIR Research Space (South Africa)

    CSIR

    1976-01-01

    Full Text Available stream_source_info Annual Report_1976.pdf.txt stream_content_type text/plain stream_size 75 Content-Encoding ISO-8859-1 stream_name Annual Report_1976.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  13. CSIR Annual report 1978

    CSIR Research Space (South Africa)

    CSIR

    1978-01-01

    Full Text Available stream_source_info Annual Report_1978.pdf.txt stream_content_type text/plain stream_size 78 Content-Encoding ISO-8859-1 stream_name Annual Report_1978.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  14. CSIR Annual report 1991

    CSIR Research Space (South Africa)

    CSIR

    1991-01-01

    Full Text Available stream_source_info Annual Report_ 1991.pdf.txt stream_content_type text/plain stream_size 40 Content-Encoding ISO-8859-1 stream_name Annual Report_ 1991.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  15. Annual Partnership Report, 2016

    Science.gov (United States)

    Wyoming Community College Commission, 2016

    2016-01-01

    The "Annual Partnership Report" catalogs partnerships that Wyoming community colleges established and maintained for each fiscal year. This partnership report fulfills statutory reporting requirement W.S. 21-18-202(e)(iv) which mandates the development of annual reports to the legislature on the outcomes of partnerships between colleges…

  16. Annual Report 1997

    Energy Technology Data Exchange (ETDEWEB)

    Golnik, N.; Mika, J.R.; Wieteska, K. [eds.

    1998-12-31

    This Annual Report of the Institute of Atomic Energy describes the results of the research works carried out at the Institute at 1997. As in the preceding years the authors of the individual scientific reports published in this Annual Report are fully responsible for their content and layout. The Report contains the information on other activities of the Institute as well. (author)

  17. Annual Energy Review, 2008

    Energy Technology Data Exchange (ETDEWEB)

    None

    2009-06-01

    The Annual Energy Review (AER) is the Energy Information Administration's (EIA) primary report of annual historical energy statistics. For many series, data begin with the year 1949. Included are statistics on total energy production, consumption, trade, and energy prices; overviews of petroleum, natural gas, coal, electricity, nuclear energy, renewable energy, and international energy; financial and environment indicators; and data unit conversions.

  18. Natural gas annual 1991

    International Nuclear Information System (INIS)

    1993-01-01

    The Natural Gas Annual 1991 provides information on the supply and disposition of natural gas to a wide audience including industry, consumers Federal and State agencies, and education institutions. This report, the Natural Gas Annual 1991 Supplement: Company Profiles, presents a detailed profile of selected companies

  19. Annual Report 2001

    International Nuclear Information System (INIS)

    Swiboda, G.

    2002-01-01

    This Annual Report of the Institute of Atomic Energy describes the results of the research works carried out at the Institute at 2001. As in the preceding years the authors of the individual scientific reports published in this Annual Report are fully responsible for their content and layout. The Report contains the information on other activities of the Institute as well. (author)

  20. Annual report to Congress

    International Nuclear Information System (INIS)

    1987-01-01

    This is the ninth Annual Report to Congress of the United States Department of Energy. It covers the activities of all elements of the Department except the independent Federal Regulatory Commission, which issues its own annual report. 88 refs., 43 tabs

  1. Annual Report 1997

    International Nuclear Information System (INIS)

    Golnik, N.; Mika, J.R.; Wieteska, K.

    1998-01-01

    This Annual Report of the Institute of Atomic Energy describes the results of the research works carried out at the Institute at 1997. As in the preceding years the authors of the individual scientific reports published in this Annual Report are fully responsible for their content and layout. The Report contains the information on other activities of the Institute as well. (author)

  2. Annual Report 1997

    Energy Technology Data Exchange (ETDEWEB)

    Golnik, N; Mika, J R; Wieteska, K [eds.

    1999-12-31

    This Annual Report of the Institute of Atomic Energy describes the results of the research works carried out at the Institute at 1997. As in the preceding years the authors of the individual scientific reports published in this Annual Report are fully responsible for their content and layout. The Report contains the information on other activities of the Institute as well. (author)

  3. Semiconductors: A 21st Century Social Studies Topic.

    Science.gov (United States)

    Sunal, Cynthia

    2000-01-01

    Addresses the reasons for exploring semiconductor technology and organic semiconductors in schools for either middle school or secondary students in an interdisciplinary social studies and science environment. Provides background information on transistors and semiconductors. Offers three social studies lessons and related science lessons if an…

  4. 46 CFR 183.360 - Semiconductor rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

  5. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

  6. 46 CFR 120.360 - Semiconductor rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

  7. The Dynamics of Semiconductor Optical Amplifiers – Modeling and Applications

    DEFF Research Database (Denmark)

    Mørk, Jesper; Nielsen, Mads Lønstrup; Berg, Tommy Winther

    2003-01-01

    The importance of semiconductor optical amplifiers is discussed. A semiconductor optical amplifier (SOA) is a semiconductor laser with anti-reflection coated facets that amplifies an injected light signal by means of stimulated emission. SOAs have a number of unique properties that open up...

  8. Magnetic field effects in organic semiconductors : theory and simulations

    NARCIS (Netherlands)

    Kersten, S.P.

    2013-01-01

    Organic semiconductors are a promising class of materials, offering several advantages over inorganic semiconductors. They are light, flexible, easy and cheap to produce, and easily chemically tunable. Organic semiconductors are currently used for lighting applications and in the displays of some

  9. Opportunities and Risks in Semiconductor Metrology

    Science.gov (United States)

    Borden, Peter

    2005-09-01

    New metrology opportunities are constantly emerging as the semiconductor industry attempts to meet scaling requirements. The paper summarizes some of the key FEOL and BEOL needs. These must be weighed against a number of considerations to ensure that they are good opportunities for the metrology equipment supplier. The paper discusses some of these considerations.

  10. Metal–semiconductor nanojunctions and their rectification ...

    Indian Academy of Sciences (India)

    Using the standard equation the difference between the work functions of the metal and the semiconductor was calculated. This showed a variation with the temperature of measurement. This is explained as arising due to the effect of pressure generated as a result of thermal expansion of the metallic phases concerned ...

  11. Tunneling of electrons through semiconductor superlattices

    Indian Academy of Sciences (India)

    Unknown

    Tunneling of electrons through semiconductor superlattices. C L ROY. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India. Abstract. The purpose of the present paper is to report a study of tunneling of electrons through semicon- ductor superlattices (SSL); specially, we have ...

  12. Onset of itinerant ferromagnetism associated with semiconductor ...

    Indian Academy of Sciences (India)

    In this paper, the magnetic and transport properties of the TiNb1−CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to ...

  13. ON THE ARTIFICIAL SEMICONDUCTOR MATERIALS | Adelabu ...

    African Journals Online (AJOL)

    For about the last three decades, semiconductor technology began to make its most apparent impact in Solid State Electronics. The field of photonics, which combines laser physics, electro-optics and nonlinear optics has expanded tremendously. Notably, modern light wave communications exemplify photonic systems.

  14. Vibrational spectra for hydrogenated amorphous semiconductors

    International Nuclear Information System (INIS)

    Kamitakahara, W.A.; Bouchard, A.M.; Biswas, R.; Gompf, F.; Suck, J.B.

    1990-01-01

    Hydrogen vibration spectra have been measured by neutron scattering for several amorphous semiconductor materials, including a-Ge:H and a-SiC:H samples containing about 10 at. % H. The data for a-Ge:H are compared in detail with the results of realistic computer simulations

  15. Impact of nano particles on semiconductor manufacturing

    NARCIS (Netherlands)

    Wali, F.; Knotter, D.M.; Kuper, F.G.

    2008-01-01

    Semiconductor industry faces a continuous challenge to decrease the transistor size as well as to increase the yield by eliminating defect sources. One of the sources of particle defects is ultra pure water used in different production tools at different stages of processing. In this paper, particle

  16. Electrodynamics of the semiconductor band edge

    International Nuclear Information System (INIS)

    Stahl, A.; Balslev, I.

    1987-01-01

    The book is a presentation of an approach to electrodynamics in semiconductors. It describes in detail the coherence phenomena appearing when the electromagnetic wavelength, the electron-hole coherence length and the single-particle wavelength are of the same order of magnitude

  17. Hyperentangled photon sources in semiconductor waveguides

    DEFF Research Database (Denmark)

    Kang, Dongpeng; Helt, L. G.; Zhukovsky, Sergei

    2014-01-01

    We propose and analyze the performance of a technique to generate mode and polarization hyperentangled photons in monolithic semiconductor waveguides using two concurrent type-II spontaneous parametric down-conversion (SPDC) processes. These two SPDC processes are achieved by waveguide engineering...

  18. Semiconductor detectors with proximity signal readout

    International Nuclear Information System (INIS)

    Asztalos, Stephen J.

    2012-01-01

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need

  19. Photoexcitation-induced processes in amorphous semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [School of Engineering and Logistics, Charles Darwin University, Darwin, NT 0909 (Australia)]. E-mail: jai.singh@cdu.edu.au

    2005-07-30

    Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories.

  20. Radiative recombination of excitons in amorphous semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [School of Engineering and Logistics, Faculty Technology, B-41, Charles Darwin University, Darwin, NT 0909 (Australia)]. E-mail: jai.singh@cdu.edu.au

    2005-04-15

    A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments.