WorldWideScience

Sample records for semiconductor technology fabrication

  1. Fabrication of laser-target components by semiconductor technology

    International Nuclear Information System (INIS)

    Tindall, W.E.

    1979-01-01

    This paper describes the design and fabrication of a unique silicon substrate with which laser-target components can be mass produced. Different sizes and shapes of gold foils from 50 to 3000 microns in diameter and up to 25 microns thick have been produced with this process since 1976

  2. Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies

    Science.gov (United States)

    Jung, C.; Thomas, B.; Lee, C.; Peralta, A.; Chattopadhyay, G.; Gill, J.; Cooper, K.; Mehdi, I.

    2011-01-01

    Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.

  3. Microplasma fabrication: from semiconductor technology for 2D-chips and microfluidic channels to rapid prototyping and 3D-printing of microplasma devices

    Science.gov (United States)

    Shatford, R.; Karanassios, Vassili

    2014-05-01

    Microplasmas are receiving attention in recent conferences and current scientific literature. In our laboratory, microplasmas-on-chips proved to be particularly attractive. The 2D- and 3D-chips we developed became hybrid because they were fitted with a quartz plate (quartz was used due to its transparency to UV). Fabrication of 2D- and 3D-chips for microplasma research is described. The fabrication methods described ranged from semiconductor fabrication technology, to Computer Numerical Control (CNC) machining, to 3D-printing. These methods may prove to be useful for those contemplating in entering microplasma research but have no access to expensive semiconductor fabrication equipment.

  4. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  5. Simulation and Performance Test Technology Development for Semiconductor Radiation Detection Instrument Fabrication

    International Nuclear Information System (INIS)

    Kim, Jong Kyung; Lee, W. G.; Kim, S. Y.; Shin, C. H.; Kim, K. O.; Park, J. M.; Jang, D. Y.; Kang, J. S.

    2010-06-01

    - Analysis on the Absorbed Dose and Electron Generation by Using MCNPX Code - Analysis on the Change of Measured Energy Spectrum As a Function of Bias Voltage Applied in Semiconductor Detector - Comparison of Monte Carlo Simulation Considering the Charge Collection Efficiency and Experimental Result - Development of Semiconductor Sensor Design Code Based on the Graphic User Interface - Analysis on Depth Profile of Ion-implanted Semiconductor Wafer Surface and Naturally Generated SiO2 Insulation Layer Using Auger Electron Spectroscopy - Measurement of AFM Images and Roughness to Abalyze Surface of Semiconductor Wafer with respect to Annealing and Cleaning Process - Measurement of Physical Properties for Semiconductor Detector Surface after CZT Passivation Process - Evaluation of Crystal Structure and Specific Resistance of CZT - Measurement/Analysis on Band Structure of CZT Crystal - Evaluation of Neutron Convertor Layer with respect to Change in Temperature - Measurement/Evaluation of physical characteristics for lattice parameter, specific resistance, and band structure of CZT crystal - Measurement/Evaluation of lattice transition of SiC semiconductor detector after radiation irradiation - Measurement/Evaluation of performance of semiconductor detector with respect to exposure in high temperature environment

  6. Semiconductors detectors: basics principals, fabrication and repair

    International Nuclear Information System (INIS)

    Souza Coelho, L.F. de.

    1982-05-01

    The fabrication and repairing techniques of semiconductor detectors, are described. These methods are shown in the way they are applied by the semiconductor detector laboratory of the KFA-Julich, where they have been developed during the last 15 years. The history of the semiconductor detectors is presented here, being also described the detector fabrication experiences inside Brazil. The key problems of manufacturing are raised. In order to understand the fabrication and repairing techniques the working principles of these detectors, are described. The cases in which worked during the stay in the KFA-Julich, particularly the fabrication of a plane Ge (Li) detector, with side entry, and the repair of a coaxial Ge (Li) is described. The vanguard problems being researched in Julich are also described. Finally it is discussed a timetable for the semiconductor detector laboratory of the UFRJ, which laboratory is in the mounting stage now. (Author) [pt

  7. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  8. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian

    2013-04-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.

  9. Smart Fabrics Technology Development

    Science.gov (United States)

    Simon, Cory; Potter, Elliott; Potter, Elliott; McCabe, Mary; Baggerman, Clint

    2010-01-01

    Advances in Smart Fabrics technology are enabling an exciting array of new applications for NASA exploration missions, the biomedical community, and consumer electronics. This report summarizes the findings of a brief investigation into the state of the art and potential applications of smart fabrics to address challenges in human spaceflight.

  10. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  11. Fabrication of prototypes of Ge(li) semiconductor detector

    International Nuclear Information System (INIS)

    Santos, W.M.S.; Marti, G.V.; Rizzo, P.; Barros, S. de.

    1987-01-01

    The fabrication process of Ge(Li) semiconductor detector prototypes, from specific chemical treatments of doped monocrystal with receptor impurities (p + semicondutor) is presented. The detector characteristics, such as resulotion and operation tension are shown. (M.C.K.) [pt

  12. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  13. Fundamentals of semiconductor processing technology

    CERN Document Server

    El-Kareh, Badih

    1995-01-01

    The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac­ turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil­ ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech­ n...

  14. Fabrication and application of amorphous semiconductor devices

    International Nuclear Information System (INIS)

    Kumurdjian, Pierre.

    1976-01-01

    This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

  15. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  16. CMOS MEMS Fabrication Technologies and Devices

    Directory of Open Access Journals (Sweden)

    Hongwei Qu

    2016-01-01

    Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

  17. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian; Kosel, Jü rgen

    2013-01-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment

  18. Fabrication and utilization of semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Lemos Junior, Orlando Ferreira

    1969-01-01

    This paper describes the assembly of the equipment for the fabrication of Ge-Li drifted detectors and the technique used in the preparation of a Planar detector of 7 cm 2 x 0,5 cm for the Laboratory of the Linear Accelerator at the University of Sao Paulo, as well as the utilization of a 22 cm 3 coaxial detector for the analysis of fission product gamma rays at the Instituto de Engenharia Nuclear, Rio de Janeiro, R J, Brazil. (author)

  19. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

    2009-01-01

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

  20. All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

    2010-01-01

    Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

  1. Thermodynamic concepts in semiconductor quantum dot technology

    International Nuclear Information System (INIS)

    Shchukin, V.

    2001-01-01

    Major trends of the modern civilization are related to the changing of the industrial society into an information and knowledge-based society. This transformation is to a large extent based on the modern information and communication technology. The nobel prize-2000 in physics is a remarkable recognition of an extremely high significance of this kind of technology. The nobel prize has been awarded with one half jointly to Zhores I. Alferov and Herbert Kroemer for developing semiconductor heterostructures used in high-speed- and opto-electronics and one half to Jack St. Clair Kilby for this part in the invention of the integrated circuit. The development of the semiconductor heterostructures technology requires a profound understanding of the basic growth mechanisms involved in any technological process, including any type of epitaxy, either the liquid phase epitaxy (LPE), or the metalorganic vapor phase epitaxy (MOVPE), or the molecular beam epitaxy (MBE). Starting from this pioneering works on semiconductor heterostructures till present time, Professor Zh. Alferov has always paid much attention to complex and comprehensive study of the subject. This covers the growth - as well as the post-growth technology including the theoretical modeling of the technology, the characterization of the heterostructures, and the device design. Such complex approach has master mined the scientific and technological success of Abraham loffe Institute in the area of semiconductor heterostructures, and later, nano structures. (Orig../A.B.)

  2. Advanced fabrication technology

    International Nuclear Information System (INIS)

    Sheely, W.F.

    1986-01-01

    The Fuel Cycle Plant is a multipurpose nuclear facility located on the Hanford Nuclear Reservation in eastern Washington state. The facility is part of the Hanford Engineering Development Laboratory which is operated by Westinghouse Hanford Company for the Department of Energy. The Fuel Cycle Plant is currently being prepared to support the Liquid Metal Reactors Program with fuel fabrication services for the Fast Flux Test Facility and other LMR programs. This report describes the technical innovations to be utilized in the operation of this plant

  3. Zinc Alloys for the Fabrication of Semiconductor Devices

    Science.gov (United States)

    Ryu, Yungryel; Lee, Tae S.

    2009-01-01

    ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and

  4. Semiconductor light sources fabricated by vapor phase epitaxial regrowth

    International Nuclear Information System (INIS)

    Powazinik, W.; Olshansky, R.; Meland, E.; Lauer, R.B.

    1986-01-01

    An extremely versatile technique for the fabrication of semiconductor light sources is described. The technique which is based on the halide vapor phase regrowth (VPR) of InP on channeled and selectively etched InGaAsP/InP double heterostructure material, results in a buried heterostructure (BH) index-guided VPR-BH diode laser structure which can be optimized for a number of different types of semiconductor light sources. The conditions and parameters associated with the halide VPR process are given, and the properties of the regrown InP are reported. The processing and characterization of high-frequency lasers with 18-GHz bandwidths and high-power lasers with cw single-spatial-mode powers of 60 mW are described. Additionally, the fabrication and characterization of superluminescent LEDs based on the this basic VPR-BH structure are described. These LEDs are capable of coupling more than 80 μW of optical power into a single-mode fiber at 100 mA, and can couple as much as 8 μW of optical power into a single-mode fiber at drive currents as low as 20 mA

  5. Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication.

    Science.gov (United States)

    Wang, Huaping; Yu, Gui

    2016-07-01

    Graphene is the most broadly discussed and studied two-dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal-catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high-quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples - undesirable in graphene-based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non-metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer-free fabrication of electronic devices are reviewed. By employing these methods, various graphene-related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene-based materials fabrication. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Radiation effects in semiconductors: technologies for hardened integrated circuits

    International Nuclear Information System (INIS)

    Charlot, J.M.

    1984-01-01

    Various technologies are used to manufacture integrated circuits for electronic systems. But for specific applications, including those with radiation environment, it is necessary to choose an appropriate technology or to improve a specific one in order to reach a definite hardening level. The aim of this paper is to present the main effects induced by radiation (neutrons and gamma rays) into the basic semiconductor devices, to explain some physical degradation mechanisms and to propose solutions for hardened integrated circuit fabrication. The analysis involves essentially the monolithic structure of the integrated circuits and the isolation technology of active elements. In conclusion, the advantages of EPIC and SOS technologies are described and the potentialities of new technologies (GaAs and SOI) are presented. (author)

  7. Radiation effects in semiconductors: technologies for hardened integrated circuits

    International Nuclear Information System (INIS)

    Charlot, J.M.

    1983-09-01

    Various technologies are used to manufacture integrated circuits for electronic systems. But for specific applications, including those with radiation environment, it is necessary to choose an appropriate technologie or to improve a specific one in order to reach a definite hardening level. The aim of this paper is to present the main effects induced by radiation (neutrons and gamma rays) into the basic semiconductor devices, to explain some physical degradation mechanisms and to propose solutions for hardened integrated circuit fabrication. The analysis involves essentially the monolithic structure of the integrated circuits and the isolation technology of active elements. In conclusion, the advantages of EPIC and SOS technologies are described and the potentialities of new technologies (GaAs and SOI) are presented

  8. A modeling method of semiconductor fabrication flows with extended knowledge hybrid Petri nets

    Institute of Scientific and Technical Information of China (English)

    Zhou Binghai; Jiang Shuyu; Wang Shijin; Wu bin

    2008-01-01

    A modeling method of extended knowledge hybrid Petri nets (EKHPNs), incorporating object-oriented methods into hybrid Petri nets (HPNs), was presented and used for the representation and modeling of semiconductor wafer fabrication flows. To model the discrete and continuous parts of a complex semiconductor wafer fabrication flow, the HPNs were introduced into the EKHPNs. Object-oriented methods were combined into the EKHPNs for coping with the complexity of the fabrication flow. Knowledge annotations were introduced to solve input and output conflicts of the EKHPNs.Finally, to demonstrate the validity of the EKHPN method, a real semiconductor wafer fabrication case was used to illustrate the modeling procedure. The modeling results indicate that the proposed method can be used to model a complex semiconductor wafer fabrication flow expediently.

  9. Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells

    Directory of Open Access Journals (Sweden)

    Ryosuke Motoyoshi

    2010-01-01

    Full Text Available Copper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. Copper indium disulfide- (CIS- based solar cells with titanium dioxide (TiO2 were produced on F-doped SnO2 (FTO. A device based on an FTO/CIS/TiO2 structure provided better cell performance compared to that based on FTO/TiO2/CIS structure. Cupric oxide- (CuO- and cuprous oxide- (Cu2O- based solar cells with fullerene (C60 were also fabricated on FTO and indium tin oxide (ITO. The microstructure and cell performance of the CuO/C60 heterojunction and the Cu2O:C60 bulk heterojunction structure were investigated. The photovoltaic devices based on FTO/CuO/C60 and ITO/Cu2O:C60 structures provided short-circuit current density of 0.015 mAcm−2 and 0.11 mAcm−2, and open-circuit voltage of 0.045 V and 0.17 V under an Air Mass 1.5 illumination, respectively. The microstructures of the active layers were examined by X-ray diffraction and transmission electron microscopy.

  10. Advanced single-wafer sequential multiprocessing techniques for semiconductor device fabrication

    International Nuclear Information System (INIS)

    Moslehi, M.M.; Davis, C.

    1989-01-01

    Single-wafer integrated in-situ multiprocessing (SWIM) is recognized as the future trend for advanced microelectronics production in flexible fast turn- around computer-integrated semiconductor manufacturing environments. The SWIM equipment technology and processing methodology offer enhanced equipment utilization, improved process reproducibility and yield, and reduced chip manufacturing cost. They also provide significant capabilities for fabrication of new and improved device structures. This paper describes the SWIM techniques and presents a novel single-wafer advanced vacuum multiprocessing technology developed based on the use of multiple process energy/activation sources (lamp heating and remote microwave plasma) for multilayer epitaxial and polycrystalline semiconductor as well as dielectric film processing. Based on this technology, multilayer in-situ-doped homoepitaxial silicon and heteroepitaxial strained layer Si/Ge x Si 1 - x /Si structures have been grown and characterized. The process control and the ultimate interfacial abruptness of the layer-to-layer transition widths in the device structures prepared by this technology will challenge the MBE techniques in multilayer epitaxial growth applications

  11. Review of the Semiconductor Industry and Technology Roadmap.

    Science.gov (United States)

    Kumar, Sameer; Krenner, Nicole

    2002-01-01

    Points out that the semiconductor industry is extremely competitive and requires ongoing technological advances to improve performance while reducing costs to remain competitive and how essential it is to gain an understanding of important facets of the industry. Provides an overview of the initial and current semiconductor technology roadmap that…

  12. Review of wide band-gap semiconductors technology

    Directory of Open Access Journals (Sweden)

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  13. Advanced Processing and Characterization Technologies. Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10

    Science.gov (United States)

    1992-07-01

    ichi Gonda, Osaka University, Co-Chair Yasuhiko Arakawa, University of Tokyo Hiroyoshi Matsumura, Hitachi Alan Miller, University of Central Florida...M.H.Meynadier, et al. Phys. Rev. Lett. 29(12), (1984), 7042. 84 Mesoscopic Size Fabrication Technology Yasuhiko Arakawa Research Center for Advanced

  14. Fabrication technology for ODS Alloy MA957

    International Nuclear Information System (INIS)

    ML Hamilton; DS Gelles; RJ Lobsinger; MM Paxton; WF Brown

    2000-01-01

    A successful fabrication schedule has been developed at Carpenter Technology Corporation for the production of MA957 fuel and blanket cladding. Difficulties with gun drilling, plug drawing and recrystallization were overcome to produce a pilot lot of tubing. This report documents the fabrication efforts of two qualified vendors and the support studies performed at WHC to develop the fabrication-schedule

  15. Soft liquid phase adsorption for fabrication of organic semiconductor films on wettability patterned surfaces.

    Science.gov (United States)

    Watanabe, Satoshi; Akiyoshi, Yuri; Matsumoto, Mutsuyoshi

    2014-01-01

    We report a soft liquid-phase adsorption (SLPA) technique for the fabrication of organic semiconductor films on wettability-patterned substrates using toluene/water emulsions. Wettability-patterned substrates were obtained by the UV-ozone treatment of self-assembled monolayers of silane coupling agents on glass plates using a metal mask. Organic semiconductor polymer films were formed selectively on the hydrophobic part of the wettability-patterned substrates. The thickness of the films fabricated by the SLPA technique is significantly larger than that of the films fabricated by dip-coating and spin-coating techniques. The film thickness can be controlled by adjusting the volume ratio of toluene to water, immersion angle, immersion temperature, and immersion time. The SLPA technique allows for the direct production of organic semiconductor films on wettability-patterned substrates with minimized material consumption and reduced number of fabrication steps.

  16. New era of silicon technologies due to radical reaction based semiconductor manufacturing

    International Nuclear Information System (INIS)

    Ohmi, Tadahiro; Hirayama, Masaki; Teramoto, Akinobu

    2006-01-01

    Current semiconductor technology, the so-called the molecule reaction based semiconductor manufacturing, now faces a very severe standstill due to the drastic increase of gate leakage currents and drain leakage currents. Radical reaction based semiconductor manufacturing has been developed to completely overcome the current standstill by introducing microwave excited high density plasma with very low electron temperatures and without accompanying charge-up damage. The introduction of radical reaction based semiconductor manufacturing has made it possible to fabricate LSI devices on any crystal orientation Si substrate surface as well as (100) Si substrate surfaces, and to eliminate a very severe limitation to the antenna ratio in the circuit layout patterns, which is strictly limited to less than 100-200 in order to obtain a relatively high production yield. (topical review)

  17. Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

    Science.gov (United States)

    Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

    2017-02-01

    Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic

  18. Production planning and control for semiconductor wafer fabrication facilities modeling, analysis, and systems

    CERN Document Server

    Mönch, Lars; Mason, Scott J

    2012-01-01

    Over the last fifty-plus years, the increased complexity and speed of integrated circuits have radically changed our world. Today, semiconductor manufacturing is perhaps the most important segment of the global manufacturing sector. As the semiconductor industry has become more competitive, improving planning and control has become a key factor for business success. This book is devoted to production planning and control problems in semiconductor wafer fabrication facilities. It is the first book that takes a comprehensive look at the role of modeling, analysis, and related information systems

  19. Semiconductor terahertz technology devices and systems at room temperature operation

    CERN Document Server

    Carpintero, G; Hartnagel, H; Preu, S; Raisanen, A

    2015-01-01

    Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap".  This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Tempe

  20. Blasting detonators incorporating semiconductor bridge technology

    Energy Technology Data Exchange (ETDEWEB)

    Bickes, R.W. Jr.

    1994-05-01

    The enormity of the coal mine and extraction industries in Russia and the obvious need in both Russia and the US for cost savings and enhanced safety in those industries suggests that joint studies and research would be of mutual benefit. The author suggests that mine sites and well platforms in Russia offer an excellent opportunity for the testing of Sandia`s precise time-delay semiconductor bridge detonators, with the potential for commercialization of the detonators for Russian and other world markets by both US and Russian companies. Sandia`s semiconductor bridge is generating interest among the blasting, mining and perforation industries. The semiconductor bridge is approximately 100 microns long, 380 microns wide and 2 microns thick. The input energy required for semiconductor bridge ignition is one-tenth the energy required for conventional bridgewire devices. Because semiconductor bridge processing is compatible with other microcircuit processing, timing and logic circuits can be incorporated onto the chip with the bridge. These circuits can provide for the precise timing demanded for cast effecting blasting. Indeed tests by Martin Marietta and computer studies by Sandia have shown that such precise timing provides for more uniform rock fragmentation, less fly rock, reduce4d ground shock, fewer ground contaminants and less dust. Cost studies have revealed that the use of precisely timed semiconductor bridges can provide a savings of $200,000 per site per year. In addition to Russia`s vast mineral resources, the Russian Mining Institute outside Moscow has had significant programs in rock fragmentation for many years. He anticipated that collaborative studies by the Institute and Sandia`s modellers would be a valuable resource for field studies.

  1. Semiconductor laser technology for remote sensing experiments

    Science.gov (United States)

    Katz, Joseph

    1988-01-01

    Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

  2. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.; Kutbee, Arwa T.; Ghodsi Nasseri, Seyed Faizelldin; Bersuker, G.; Hussain, Muhammad Mustafa

    2014-01-01

    We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect

  3. Radiation effects in technologies of semiconductor materials and devises

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Bogatyrev, Yu.V.; Lastovskij, S.B.; Marchenko, I.G.; Zhdanovich, N.E.

    2003-01-01

    In the paper were considered the physical basics and practical results of using of penetrating radiations in technologies of nuclear transmutation of semiconductor materials (Si, GaAs) as well as in production of semiconductor devices including high-power silicon diodes, thyristors and transistors. It is shown the high efficiency of radiation technology for increasing of electronic device speed, exclusion of technological operations such as gold or platinum diffusions, increase of quality, decrease of prime cost and increase of good-to-bad device ratio yield

  4. Flexible MEMS: A novel technology to fabricate flexible sensors and electronics

    Science.gov (United States)

    Tu, Hongen

    This dissertation presents the design and fabrication techniques used to fabricate flexible MEMS (Micro Electro Mechanical Systems) devices. MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components to be fabricated on flexible substrates for a wide variety of applications. Due to the fact that flexible substrate is temperature sensitive, typically only low temperature materials, such as polymers, metals, and organic semiconductor materials, can be directly fabricated on flexible substrates. A novel technology based on XeF2(xenon difluoride) isotropic silicon etching and parylene conformal coating, which is able to monolithically incorporate high temperature materials and fluidic channels, was developed at Wayne State University. The technology was first implemented in the development of out-of-plane parylene microneedle arrays that can be individually addressed by integrated flexible micro-channels. These devices enable the delivery of chemicals with controlled temporal and spatial patterns and allow us to study neurotransmitter-based retinal prosthesis. The technology was further explored by adopting the conventional SOI-CMOS processes. High performance and high density CMOS circuits can be first fabricated on SOI wafers, and then be integrated into flexible substrates. Flexible p-channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) were successfully integrated and tested. Integration of pressure sensors and flow sensors based on single crystal silicon has also been demonstrated. A novel smart yarn technology that enables the invisible integration of sensors and electronics into fabrics has been developed. The most significant advantage of this technology is its post-MEMS and post-CMOS compatibility. Various high

  5. High-performance green semiconductor devices: materials, designs, and fabrication

    Science.gov (United States)

    Jung, Yei Hwan; Zhang, Huilong; Gong, Shaoqin; Ma, Zhenqiang

    2017-06-01

    From large industrial computers to non-portable home appliances and finally to light-weight portable gadgets, the rapid evolution of electronics has facilitated our daily pursuits and increased our life comforts. However, these rapid advances have led to a significant decrease in the lifetime of consumer electronics. The serious environmental threat that comes from electronic waste not only involves materials like plastics and heavy metals, but also includes toxic materials like mercury, cadmium, arsenic, and lead, which can leak into the ground and contaminate the water we drink, the food we eat, and the animals that live around us. Furthermore, most electronics are comprised of non-renewable, non-biodegradable, and potentially toxic materials. Difficulties in recycling the increasing amount of electronic waste could eventually lead to permanent environmental pollution. As such, discarded electronics that can naturally degrade over time would reduce recycling challenges and minimize their threat to the environment. This review provides a snapshot of the current developments and challenges of green electronics at the semiconductor device level. It looks at the developments that have been made in an effort to help reduce the accumulation of electronic waste by utilizing unconventional, biodegradable materials as components. While many semiconductors are classified as non-biodegradable, a few biodegradable semiconducting materials exist and are used as electrical components. This review begins with a discussion of biodegradable materials for electronics, followed by designs and processes for the manufacturing of green electronics using different techniques and designs. In the later sections of the review, various examples of biodegradable electrical components, such as sensors, circuits, and batteries, that together can form a functional electronic device, are discussed and new applications using green electronics are reviewed.

  6. Inspection logistics planning for multi-stage production systems with applications to semiconductor fabrication lines

    Science.gov (United States)

    Chen, Kyle Dakai

    Since the market for semiconductor products has become more lucrative and competitive, research into improving yields for semiconductor fabrication lines has lately received a tremendous amount of attention. One of the most critical tasks in achieving such yield improvements is to plan the in-line inspection sampling efficiently so that any potential yield problems can be detected early and eliminated quickly. We formulate a multi-stage inspection planning model based on configurations in actual semiconductor fabrication lines, specifically taking into account both the capacity constraint and the congestion effects at the inspection station. We propose a new mixed First-Come-First-Serve (FCFS) and Last-Come-First-Serve (LCFS) discipline for serving the inspection samples to expedite the detection of potential yield problems. Employing this mixed FCFS and LCFS discipline, we derive approximate expressions for the queueing delays in yield problem detection time and develop near-optimal algorithms to obtain the inspection logistics planning policies. We also investigate the queueing performance with this mixed type of service discipline under different assumptions and configurations. In addition, we conduct numerical tests and generate managerial insights based on input data from actual semiconductor fabrication lines. To the best of our knowledge, this research is novel in developing, for the first time in the literature, near-optimal results for inspection logistics planning in multi-stage production systems with congestion effects explicitly considered.

  7. Composite fabrication via resin transfer molding technology

    Energy Technology Data Exchange (ETDEWEB)

    Jamison, G.M.; Domeier, L.A.

    1996-04-01

    The IMPReS (Integrated Modeling and Processing of Resin-based Structures) Program was funded in FY95 to consolidate, evaluate and enhance Sandia`s capabilities in the design and fabrication of composite structures. A key driver of this and related programs was the need for more agile product development processes and for model based design and fabrication tools across all of Sandia`s material technologies. A team of polymer, composite and modeling personnel was assembled to benchmark Sandia`s existing expertise in this area relative to industrial and academic programs and to initiate the tasks required to meet Sandia`s future needs. RTM (Resin Transfer Molding) was selected as the focus composite fabrication technology due to its versatility and growing use in industry. Modeling efforts focused on the prediction of composite mechanical properties and failure/damage mechanisms and also on the uncured resin flow processes typical of RTM. Appropriate molds and test composites were fabricated and model validation studies begun. This report summarizes and archives the modeling and fabrication studies carried out under IMPReS and evaluates the status of composite technology within Sandia. It should provide a complete and convenient baseline for future composite technology efforts within Sandia.

  8. Semiconductor technology for reducing emissions and increasing efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Duffin, B.; Frank, R. [Motorola Semiconductor Products Sector, Phoenix, AZ (United States)

    1997-12-31

    The cooperation and support of all industries are required to significantly impact a worldwide reduction in gaseous emissions that may contribute to climate change. Each industry also is striving to more efficiently utilize the resources that it consumes since this is both conservation for good citizenship and an intelligent approach to business. The semiconductor industry is also extremely concerned with these issues. However, semiconductor manufacturer`s products provide solutions for reduced emissions and increased efficiency in their industry, other industries and areas that can realize significant improvements through control technology. This paper will focus on semiconductor technologies of digital control, power switching and sensing to improve efficiency and reduce emissions in automotive, industrial, and office/home applications. 10 refs., 13 figs.

  9. SETEC/Semiconductor Manufacturing Technologies Program: 1999 Annual and Final Report

    Energy Technology Data Exchange (ETDEWEB)

    MCBRAYER,JOHN D.

    2000-12-01

    This report summarizes the results of work conducted by the Semiconductor Manufacturing Technologies Program at Sandia National Laboratories (Sandia) during 1999. This work was performed by one working group: the Semiconductor Equipment Technology Center (SETEC). The group's projects included Numerical/Experimental Characterization of the Growth of Single-Crystal Calcium Fluoride (CaF{sub 2}); The Use of High-Resolution Transmission Electron Microscopy (HRTEM) Imaging for Certifying Critical-Dimension Reference Materials Fabricated with Silicon Micromachining; Assembly Test Chip for Flip Chip on Board; Plasma Mechanism Validation: Modeling and Experimentation; and Model-Based Reduction of Contamination in Gate-Quality Nitride Reactor. During 1999, all projects focused on meeting customer needs in a timely manner and ensuring that projects were aligned with the goals of the National Technology Roadmap for Semiconductors sponsored by the Semiconductor Industry Association and with Sandia's defense mission. This report also provides a short history of the Sandia/SEMATECH relationship and a brief on all projects completed during the seven years of the program.

  10. Development of Nuclear Fuel Remote Fabrication Technology

    International Nuclear Information System (INIS)

    Lee, Jung Won; Yang, M. S.; Kim, S. S. and others

    2005-04-01

    The aim of this study is to develop the essential technology of dry refabrication using spent fuel materials in a laboratory scale on the basis of proliferation resistance policy. The emphasis is placed on the assessment and the development of the essential technology of dry refabrication using spent fuel materials. In this study, the remote fuel fabrication technology to make a dry refabricated fuel with an enhanced quality was established. And the instrumented fuel pellets and mini-elements were manufactured for the irradiation testing in HANARO. The design and development technology of the remote fabrication equipment and the remote operating and maintenance technology of the equipment in hot cell were also achieved. These achievements will be used in and applied to the future back-end fuel cycle and GEN-IV fuel cycle and be a milestone for Korea to be an advanced nuclear country in the world

  11. Fabrication and performance of pressure-sensing device consisting of electret film and organic semiconductor

    Science.gov (United States)

    Kodzasa, Takehito; Nobeshima, Daiki; Kuribara, Kazunori; Uemura, Sei; Yoshida, Manabu

    2017-04-01

    We propose a new concept of a pressure-sensitive device that consists of an organic electret film and an organic semiconductor. This device exhibits high sensitivity and selectivity against various types of pressure. The sensing mechanism of this device originates from a modulation of the electric conductivity of the organic semiconductor film induced by the interaction between the semiconductor film and the charged electret film placed face to face. It is expected that a complicated sensor array will be fabricated by using a roll-to-roll manufacturing system, because this device can be prepared by an all-printing and simple lamination process without high-level positional adjustment for printing processes. This also shows that this device with a simple structure is suitable for application to a highly flexible device array sheet for an Internet of Things (IoT) or wearable sensing system.

  12. Fabrication of combinatorial nm-planar electrode array for high throughput evaluation of organic semiconductors

    International Nuclear Information System (INIS)

    Haemori, M.; Edura, T.; Tsutsui, K.; Itaka, K.; Wada, Y.; Koinuma, H.

    2006-01-01

    We have fabricated a combinatorial nm-planar electrode array by using photolithography and chemical mechanical polishing processes for high throughput electrical evaluation of organic devices. Sub-nm precision was achieved with respect to the average level difference between each pair of electrodes and a dielectric layer. The insulating property between the electrodes is high enough to measure I-V characteristics of organic semiconductors. Bottom-contact field-effect-transistors (FETs) of pentacene were fabricated on this electrode array by use of molecular beam epitaxy. It was demonstrated that the array could be used as a pre-patterned device substrate for high throughput screening of the electrical properties of organic semiconductors

  13. Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

    International Nuclear Information System (INIS)

    Appenzeller, J.; Martel, R.; Solomon, P.; Chan, K.; Avouris, Ph.; Knoch, J.; Benedict, J.; Tanner, M.; Thomas, S.; Wang, K. L.

    2000-01-01

    We present a scheme for the fabrication of ultrashort channel length metal-oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithography and molecular-beam epitaxy. The active channel is undoped and is defined by a combination of nanometer-scale patterning and anisotropic etching of an n ++ layer grown on a silicon on insulator wafer. The method is self-limiting and can produce MOSFET devices with channel lengths of less than 10 nm. Measurements on the first batch of n-MOSFET devices fabricated with this approach show very good output characteristics and good control of short-channel effects. (c) 2000 American Institute of Physics

  14. Scalable fabrication of strongly textured organic semiconductor micropatterns by capillary force lithography.

    Science.gov (United States)

    Jo, Pil Sung; Vailionis, Arturas; Park, Young Min; Salleo, Alberto

    2012-06-26

    Strongly textured organic semiconductor micropatterns made of the small molecule dioctylbenzothienobenzothiophene (C(8)-BTBT) are fabricated by using a method based on capillary force lithography (CFL). This technique provides the C(8)-BTBT solution with nucleation sites for directional growth, and can be used as a scalable way to produce high quality crystalline arrays in desired regions of a substrate for OFET applications. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-06-09

    We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.

  16. Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method

    International Nuclear Information System (INIS)

    Xu Xingsheng; Chen Hongda; Xiong Zhigang; Jin Aizi; Gu Changzhi; Cheng Bingying; Zhang Daozhong

    2007-01-01

    In this paper, we introduced the fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam machine, it shows that the method of focused-ion beam can fabricate two-dimensional photonic crystal and photonic crystal device efficiently, and the quality of the fabricated photonic crystal is high. Using the focused-ion beam method, we fabricate photonic crystal wavelength division multiplexer, and its characteristics are analyzed

  17. Humidity Sensors Principle, Mechanism, and Fabrication Technologies: A Comprehensive Review

    Science.gov (United States)

    Farahani, Hamid; Wagiran, Rahman; Hamidon, Mohd Nizar

    2014-01-01

    Humidity measurement is one of the most significant issues in various areas of applications such as instrumentation, automated systems, agriculture, climatology and GIS. Numerous sorts of humidity sensors fabricated and developed for industrial and laboratory applications are reviewed and presented in this article. The survey frequently concentrates on the RH sensors based upon their organic and inorganic functional materials, e.g., porous ceramics (semiconductors), polymers, ceramic/polymer and electrolytes, as well as conduction mechanism and fabrication technologies. A significant aim of this review is to provide a distinct categorization pursuant to state of the art humidity sensor types, principles of work, sensing substances, transduction mechanisms, and production technologies. Furthermore, performance characteristics of the different humidity sensors such as electrical and statistical data will be detailed and gives an added value to the report. By comparison of overall prospects of the sensors it was revealed that there are still drawbacks as to efficiency of sensing elements and conduction values. The flexibility offered by thick film and thin film processes either in the preparation of materials or in the choice of shape and size of the sensor structure provides advantages over other technologies. These ceramic sensors show faster response than other types. PMID:24784036

  18. Humidity Sensors Principle, Mechanism, and Fabrication Technologies: A Comprehensive Review

    Directory of Open Access Journals (Sweden)

    Hamid Farahani

    2014-04-01

    Full Text Available Humidity measurement is one of the most significant issues in various areas of applications such as instrumentation, automated systems, agriculture, climatology and GIS. Numerous sorts of humidity sensors fabricated and developed for industrial and laboratory applications are reviewed and presented in this article. The survey frequently concentrates on the RH sensors based upon their organic and inorganic functional materials, e.g., porous ceramics (semiconductors, polymers, ceramic/polymer and electrolytes, as well as conduction mechanism and fabrication technologies. A significant aim of this review is to provide a distinct categorization pursuant to state of the art humidity sensor types, principles of work, sensing substances, transduction mechanisms, and production technologies. Furthermore, performance characteristics of the different humidity sensors such as electrical and statistical data will be detailed and gives an added value to the report. By comparison of overall prospects of the sensors it was revealed that there are still drawbacks as to efficiency of sensing elements and conduction values. The flexibility offered by thick film and thin film processes either in the preparation of materials or in the choice of shape and size of the sensor structure provides advantages over other technologies. These ceramic sensors show faster response than other types.

  19. Applying Physics: Opportunities in Semiconductor Technology Companies

    Science.gov (United States)

    Redinbo, Greg

    2011-03-01

    While many physicists practice in university settings, physics skills can also be applied outside the traditional academic track. ~Identifying these opportunities requires a clear understanding of how your physics training can be used in an industrial setting, understanding what challenges technology companies face, and identifying how your problem solving skills can be broadly applied in technology companies. ~In this talk I will highlight the common features of such companies, discuss what specific skills are useful for an industrial physicist, and explain roles (possibly unfamiliar) that may be available to you.

  20. Incorporating DSA in multipatterning semiconductor manufacturing technologies

    Science.gov (United States)

    Badr, Yasmine; Torres, J. A.; Ma, Yuansheng; Mitra, Joydeep; Gupta, Puneet

    2015-03-01

    Multi-patterning (MP) is the process of record for many sub-10nm process technologies. The drive to higher densities has required the use of double and triple patterning for several layers; but this increases the cost of the new processes especially for low volume products in which the mask set is a large percentage of the total cost. For that reason there has been a strong incentive to develop technologies like Directed Self Assembly (DSA), EUV or E-beam direct write to reduce the total number of masks needed in a new technology node. Because of the nature of the technology, DSA cylinder graphoepitaxy only allows single-size holes in a single patterning approach. However, by integrating DSA and MP into a hybrid DSA-MP process, it is possible to come up with decomposition approaches that increase the design flexibility, allowing different size holes or bar structures by independently changing the process for every patterning step. A simple approach to integrate multi-patterning with DSA is to perform DSA grouping and MP decomposition in sequence whether it is: grouping-then-decomposition or decomposition-then-grouping; and each of the two sequences has its pros and cons. However, this paper describes why these intuitive approaches do not produce results of acceptable quality from the point of view of design compliance and we highlight the need for custom DSA-aware MP algorithms.

  1. CCST [Center for Compound Semiconductor Technology] research briefs

    International Nuclear Information System (INIS)

    Zipperian, T.E.; Voelker, E.R.

    1989-12-01

    This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

  2. Practical silicon Light emitting devices fabricated by standard IC technology

    International Nuclear Information System (INIS)

    Aharoni, H.; Monuko du Plessis; Snyman, L.W.

    2004-01-01

    Full Text:Research activities are described with regard to the development of a comprehensive approach for the practical realization of single crystal Silicon Light Emitting Devices (Si-LEDs). Several interesting suggestions for the fabrication of such devices were made in the literature but they were not adopted by the semiconductor industry because they involve non-standard fabrication schemes, requiring special production lines. Our work presents an alternative approach, proposed and realized in practice by us, permitting the fabrication of Si-LEDs using the standard conventional fully industrialized IC technology ''as is'' without any adaptation. It enables their fabrication in the same production lines of the presently existing IC industry. This means that Si-LEDs can now be fabricated simultaneously with other components, such as transistors, on the same silicon chip, using the same masks and processing procedures. The result is that the yield, reliability, and price of the above Si-LEDs are the same as the other Si devices integrated on the same chip. In this work some structural details of several practical Si-LED's designed by us, as well as experimental results describing their performance are presented. These Si-LED's were fabricated to our specifications utilizing standard CMOS/BiCMOS technology, a fact which comprises an achievement by itself. The structure of the Si-LED's, is designed according to specifications such as the required operating voltage, overall light output intensity, its dependence(linear, or non-linear) on the input signal (voltage or current), light generations location (bulk, or near-surface), the emission pattern and uniformity. Such structural design present a problem since the designer can not use any structural parameters (such as doping levels and junction depths for example) but only those which already exist in the production lines. Since the fabrication procedures in these lines are originally designed for processing of

  3. New technology for the control of narrow-gap semiconductors

    International Nuclear Information System (INIS)

    Antoniou, I.; Bozhevolnov, V.; Melnikov, Yu.; Yafyasov, A.

    2003-01-01

    We present the results of the year work in the frame of the EU ESPRIT Project 28890 NTCONGS 'New technology for the control of narrow-gap semiconductors'. This work has involved both theoretical and experimental study, as well as the development of new specific equipment, towards the creation of a new generation of nanoelectronic devices able to operate at 77 K and even at room temperature

  4. Semiconductor radiation detectors technology and applications

    CERN Document Server

    2018-01-01

    The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.

  5. Dissolvable microneedle fabrication using piezoelectric dispensing technology.

    Science.gov (United States)

    Allen, Evin A; O'Mahony, Conor; Cronin, Michael; O'Mahony, Thomas; Moore, Anne C; Crean, Abina M

    2016-03-16

    Dissolvable microneedle (DMN) patches are novel dosage forms for the percutaneous delivery of vaccines. DMN are routinely fabricated by dispensing liquid formulations into microneedle-shaped moulds. The liquid formulation within the mould is then dried to create dissolvable vaccine-loaded microneedles. The precision of the dispensing process is critical to the control of formulation volume loaded into each dissolvable microneedle structure. The dispensing process employed must maintain vaccine integrity. Wetting of mould surfaces by the dispensed formulation is also an important consideration for the fabrication of sharp-tipped DMN. Sharp-tipped DMN are essential for ease of percutaneous administration. In this paper, we demonstrate the ability of a piezoelectric dispensing system to dispense picolitre formulation volumes into PDMS moulds enabling the fabrication of bilayer DMN. The influence of formulation components (trehalose and polyvinyl alcohol (PVA) content) and piezoelectric actuation parameters (voltage, frequency and back pressure) on drop formation is described. The biological integrity of a seasonal influenza vaccine following dispensing was investigated and maintained voltage settings of 30 V but undermined at higher settings, 50 and 80 V. The results demonstrate the capability of piezoelectric dispensing technology to precisely fabricate bilayer DMN. They also highlight the importance of identifying formulation and actuation parameters to ensure controlled droplet formulation and vaccine stabilisation. Copyright © 2015 Elsevier B.V. All rights reserved.

  6. Thermal Management of Power Semiconductor Packages - Matching Cooling Technologies with Packaging Technologies (Presentation)

    Energy Technology Data Exchange (ETDEWEB)

    Bennion, K.; Moreno, G.

    2010-04-27

    Heat removal for power semiconductor devices is critical for robust operation. Because there are different packaging options, different thermal management technologies, and a range of applications, there is a need for a methodology to match cooling technologies and package configurations to target applications. To meet this need, a methodology was developed to compare the sensitivity of cooling technologies on the overall package thermal performance over a range of power semiconductor packaging configurations. The results provide insight into the trade-offs associated with cooling technologies and package configurations. The approach provides a method for comparing new developments in power semiconductor packages and identifying potential thermal control technologies for the package. The results can help users select the appropriate combination of packaging configuration and cooling technology for the desired application.

  7. Rare resource supply crisis and solution technology for semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Hu, Sophia; Yoo, Youngsun; Takahisa, Kenji; Enami, Tatsuo

    2016-03-01

    There are growing concerns over future environmental impact and earth resource shortage throughout the world and in many industries. Our semiconductor industry is not excluded. "Green" has become an important topic as production volume become larger and more powerful. Especially, the rare gases are widely used in semiconductor manufacturing because of its inertness and extreme chemical stability. One major component of an Excimer laser system is Neon. It is used as a buffer gas for Argon (Ar) and Krypton (Kr) gases used in deep ultraviolet (DUV) lithography laser systems. Since Neon gas accounting for more than 96% of the laser gas mixture, a fairly large amount of neon gas is consumed to run these DUV lasers. However, due to country's instability both in politics and economics in Ukraine, the main producer of neon gas today, supply reduction has become an issue and is causing increasing concern. This concern is not only based on price increases, but has escalated to the point of supply shortages in 2015. This poses a critical situation for the semiconductor industry, which represents the leading consumer of neon gas in the world. Helium is another noble gas used for Excimer laser operation. It is used as a purge gas for optical component modules to prevent from being damaged by active gases and impurities. Helium has been used in various industries, including for medical equipment, linear motor cars, and semiconductors, and is indispensable for modern life. But consumption of helium in manufacturing has been increased dramatically, and its unstable supply and price rise has been a serious issue today. In this article, recent global supply issue of rare resources, especially Neon gas and Helium gas, and its solution technology to support semiconductor industry will be discussed.

  8. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  9. Fabrication of integrated metallic MEMS devices

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

    2002-01-01

    A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characteri......A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

  10. Fabrication issues and technology development for HELEOS

    International Nuclear Information System (INIS)

    Susoeff, A.R.; Hawke, R.S.; Balk, J.K.; Hall, C.A.; McDonald, M.J.

    1989-01-01

    Starfire is a joint railgun of Lawrence Livermore National Laboratory and Sandia National Laboratory-Albuquerque. The goal of Starfire is to develop a Hypervelocity Electromagnetic Launcher for Equation of State (HELEOS) experiments. A two-stage light-gas gun is used as a pre-injector. Each round-bore HELEOS railgun module is 12.7 mm in diameter and 2.4 m long. The muzzle end of the railgun is connected to a vacuum tank. Common materials and fabrication technology are used in the manufacture of all components, and modular design allows for extending the length of the railgun as progress dictates. The launcher uses a ''vee block'' geometry, which is designed to: (1) provide compressive preload, (2) operate with a 300-MPa (3-kbar) internal bore pressure, and (3) easily accommodate interchangeable materials in the bore support structure and rail. The authors have performed full-scale material testing of the railgun and have developed a precision round-bore fabrication process. Air-gage inspection is used to determine bore diameter and straightness. They have also developed a surface mapping system to document the surface topography of the bore before and after an experiment. This paper presents fabrication details, results of tests conducted, and areas for potential improvement

  11. Fabrication of Semiconductor ZnO Nanostructures for Versatile SERS Application

    Directory of Open Access Journals (Sweden)

    Lili Yang

    2017-11-01

    Full Text Available Since the initial discovery of surface-enhanced Raman scattering (SERS in the 1970s, it has exhibited a huge potential application in many fields due to its outstanding advantages. Since the ultra-sensitive noble metallic nanostructures have increasingly exposed themselves as having some problems during application, semiconductors have been gradually exploited as one of the critical SERS substrate materials due to their distinctive advantages when compared with noble metals. ZnO is one of the most representative metallic oxide semiconductors with an abundant reserve, various and cost-effective fabrication techniques, as well as special physical and chemical properties. Thanks to the varied morphologies, size-dependent exciton, good chemical stability, a tunable band gap, carrier concentration, and stoichiometry, ZnO nanostructures have the potential to be exploited as SERS substrates. Moreover, other distinctive properties possessed by ZnO such as biocompatibility, photocatcalysis and self-cleaning, and gas- and chemo-sensitivity can be synergistically integrated and exerted with SERS activity to realize the multifunctional potential of ZnO substrates. In this review, we discuss the inevitable development trend of exploiting the potential semiconductor ZnO as a SERS substrate. After clarifying the root cause of the great disparity between the enhancement factor (EF of noble metals and that of ZnO nanostructures, two specific methods are put forward to improve the SERS activity of ZnO, namely: elemental doping and combination of ZnO with noble metals. Then, we introduce a distinctive advantage of ZnO as SERS substrate and illustrate the necessity of reporting a meaningful average EF. We also summarize some fabrication methods for ZnO nanostructures with varied dimensions (0–3 dimensions. Finally, we present an overview of ZnO nanostructures for the versatile SERS application.

  12. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  13. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  14. Status and progress in ion implantation technology for semiconductor device manufacturing

    International Nuclear Information System (INIS)

    Takahashi, Noriyuki

    1998-01-01

    Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

  15. Large area SiC coating technology of RBSC for semiconductor processing component

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described.

  16. High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

    Science.gov (United States)

    Yu, Lili; Zubair, Ahmad; Santos, Elton J G; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao; Palacios, Tomás

    2015-08-12

    Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.

  17. Large area SiC coating technology of RBSC for semiconductor processing component

    International Nuclear Information System (INIS)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described

  18. New semiconductor laser technology for gas sensing applications in the 1650nm range

    Science.gov (United States)

    Morrison, Gordon B.; Sherman, Jes; Estrella, Steven; Moreira, Renan L.; Leisher, Paul O.; Mashanovitch, Milan L.; Stephen, Mark; Numata, Kenji; Wu, Stewart; Riris, Haris

    2017-08-01

    Atmospheric methane (CH4) is the second most important anthropogenic greenhouse gas with approximately 25 times the radiative forcing of carbon dioxide (CO2) per molecule. CH4 also contributes to pollution in the lower atmosphere through chemical reactions leading to ozone production. Recent developments of LIDAR measurement technology for CH4 have been previously reported by Goddard Space Flight Center (GSFC). In this paper, we report on a novel, high-performance tunable semiconductor laser technology developed by Freedom Photonics for the 1650nm wavelength range operation, and for LIDAR detection of CH4. Devices described are monolithic, with simple control, and compatible with low-cost fabrication techniques. We present 3 different types of tunable lasers implemented for this application.

  19. The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.

    Science.gov (United States)

    Xiao, Z; Camino, F E

    2009-04-01

    Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

  20. Surface passivation technology for III-V semiconductor nanoelectronics

    International Nuclear Information System (INIS)

    Hasegawa, Hideki; Akazawa, Masamichi

    2008-01-01

    The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

  1. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer.

    Science.gov (United States)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao; Wienhold, Tobias; Vannahme, Christoph; Jakobs, Peter-Jürgen; Bacher, Andreas; Muslija, Alban; Mappes, Timo; Lemmer, Uli

    2013-11-18

    Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different excitation areas.

  2. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer

    DEFF Research Database (Denmark)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao

    2013-01-01

    material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled......Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain......-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different...

  3. Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

    Science.gov (United States)

    Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

    2015-09-01

    We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10-2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

  4. Fabrication of smooth patterned structures of refractory metals, semiconductors, and oxides via template stripping.

    Science.gov (United States)

    Park, Jong Hyuk; Nagpal, Prashant; McPeak, Kevin M; Lindquist, Nathan C; Oh, Sang-Hyun; Norris, David J

    2013-10-09

    The template-stripping method can yield smooth patterned films without surface contamination. However, the process is typically limited to coinage metals such as silver and gold because other materials cannot be readily stripped from silicon templates due to strong adhesion. Herein, we report a more general template-stripping method that is applicable to a larger variety of materials, including refractory metals, semiconductors, and oxides. To address the adhesion issue, we introduce a thin gold layer between the template and the deposited materials. After peeling off the combined film from the template, the gold layer can be selectively removed via wet etching to reveal a smooth patterned structure of the desired material. Further, we demonstrate template-stripped multilayer structures that have potential applications for photovoltaics and solar absorbers. An entire patterned device, which can include a transparent conductor, semiconductor absorber, and back contact, can be fabricated. Since our approach can also produce many copies of the patterned structure with high fidelity by reusing the template, a low-cost and high-throughput process in micro- and nanofabrication is provided that is useful for electronics, plasmonics, and nanophotonics.

  5. Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

    Science.gov (United States)

    Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

    2015-01-01

    We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10–2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost. PMID:26416434

  6. Innovative forming and fabrication technologies : new opportunities.

    Energy Technology Data Exchange (ETDEWEB)

    Davis, B.; Hryn, J.; Energy Systems; Kingston Process Metallurgy, Inc.

    2008-01-31

    The advent of light metal alloys and advanced materials (polymer, composites, etc.) have brought the possibility of achieving important energy reductions into the full life cycle of these materials, especially in transportation applications. 1 These materials have gained acceptance in the aerospace industry but use of light metal alloys needs to gain wider acceptance in other commercial transportation areas. Among the main reasons for the relatively low use of these materials are the lack of manufacturability, insufficient mechanical properties, and increased material costs due to processing inefficiencies. Considering the enormous potential energy savings associated with the use of light metal alloys and advanced materials in transportation, there is a need to identify R&D opportunities in the fields of materials fabrication and forming aimed at developing materials with high specific mechanical properties combined with energy efficient processes and good manufacturability. This report presents a literature review of the most recent developments in the areas of fabrication and metal forming focusing principally on aluminum alloys. In the first section of the document, the different sheet manufacturing technologies including direct chill (DC) casting and rolling, spray forming, spray rolling, thin slab, and strip casting are reviewed. The second section of the document presents recent research on advanced forming processes. The various forming processes reviewed are: superplastic forming, electromagnetic forming, age forming, warm forming, hydroforming, and incremental forming. Optimization of conventional forming processes is also discussed. Potentially interesting light metal alloys for high structural efficiency including aluminum-scandium, aluminum-lithium, magnesium, titanium, and amorphous metal alloys are also reviewed. This section concludes with a discussion on alloy development for manufacturability. The third section of the document reviews the latest

  7. Development of CANFLEX fuel fabrication technology

    Energy Technology Data Exchange (ETDEWEB)

    Kang, M. S.; Choi, C. B.; Park, C. H.; Kwon, W. J.; Kim, C. H.; Kim, B. J.; Koo, C. H.; Cho, D. S.; So, D. Y.; Suh, S. W.; Park, C. J.; Chang, D. H.; Yun, S. H. [KEPCO Nuclear Fuel Company, Taejeon (Korea)

    2000-04-01

    Wolsong Unit 1 as the first heavy water reactor in Korea has been in service for 17 years since 1983. It would be about the time to prepare a plan for the solution of problems due to aging of the reactor. The aging of CANDU reactor could lead especially to the steam generator cruding and pressure tube sagging and creep and then decreases the operation margin to make some problems on reactor operations and safety. The counterplan could be made in two ways. One is to repair or modify reactor itself. The other is to develop new advanced fuel to increase of CANDU operation margin effectively, so as to compensate the reduced operation margin. Therefore, the first objectives in the present R and D is to develop the CANFLEX-NU(CANDU Flexible fuelling-Natural Uranium) fuel as a CANDU advanced fuel. One of the improvements in CANDU fuel fabrication technology, and advanced method of Zr-Be brazing was developed. For the formation of Zr-Be alloy, preheating and main heating temperature in the furnace is 700 deg C, 1200 deg C respectively. In order to find an appropriate material for the brazing joints in the CANDU fuel, the composition of Zr based amorphous metals were designed. And, the effect of hydrogen on the mechanical properties of cladding sheath and feasibility of the eddy current test to evaluate quality of end cap weld were also studied for the fundamental research purpose. As a preliminary study to suggest optimal way for the mass production of CANFLEX-NU fuel at KNFC the existing CANDU fuel facilities and fabrication/inspection processes were reviewed. The best way is that the current CANDU facility shall be modified to produce small diametrial CANFLEX elements and a new facility shall be constructed to produce large diametrial CANFLEX fuel elements. 46 refs., 99 figs., 10 tabs. (Author)

  8. Characterization of semiconductor and frontier materials by nuclear microprobe technology

    International Nuclear Information System (INIS)

    Zhu Jieqing; Li Xiaolin; Yang Changyi; Lu Rongrong; Wang Jiqing; Guo Panlin

    2002-01-01

    The nuclear microprobe technology is used to characterize the properties of semiconductor and other frontier materials at the stages of their synthesis, modification, integration and application. On the basis of the beam current being used, the analytical nuclear microprobe techniques being used in this project can be divided into two categories: high beam current (PIXE, RBS, PEB) or low beam current (IBIC, STIM) techniques. The material properties measured are the thickness and composition of a composite surface on a SiC ceramic, the sputtering-induced surface segregation and depth profile change in a Ag-Cu binary alloy, the irradiation effects on the CCE of CVD diamond, the CCE profile at a polycrystalline CVD diamond film and a GaAs diode at different voltage biases and finally, the characterization of individual sample on an integrated material chip. (author)

  9. Fabrication and in-situ STM investigation of growth dynamics of semiconductor nanostructures grown by MBE

    International Nuclear Information System (INIS)

    Borisova, Svetlana

    2012-01-01

    Modern development of information technologies requires an introduction of new fundamental concepts, in order to create more efficient devices and to decrease their size. One of the most promising ways is to increase the functionality of silicon by integrating novel materials into Si-based production. This PhD thesis reports on the fabrication and investigation of the growth of semiconductor nanostructures on Si substrates by molecular beam epitaxy (MBE). In-situ scanning tunneling microscopy (STM) is a powerful technique in order to study morphological and electronic properties of the grown structures directly under ultra high vacuum (UHV) conditions. It is shown that the combination of MBE and in-situ STM enables the study of nucleation and growth dynamics at the atomic scale. It provides us with numerous information concerning the nucleation mechanism, the growth mode of the structures, adatom kinetics, influence of the lattice mismatch between the substrate and the grown structure as well as formation and morphology of crystal defects. The first part of the thesis focuses on the experimental realization based upon an existing setup. The construction of an in-situ UHV STM compatible with the MBE cluster and the technical improvement of the STM setup are described. Subsequently, test measurements are performed on the technologically most important surfaces, Ge (100) and Si (111). The second part of the thesis is dedicated to ordered small-period arrays of self-assembled Ge quantum dots (QDs) grown on pre-patterned Si (100) substrates. Small-period Ge QD crystals are highly interesting since band structure calculations indicate coupled electronic states of the QDs in the case of the small lateral period of approximately 30 nm. Small-period hole patterns with a period of 56 nm are fabricated by e-beam lithography on Si substrates. The evolution of the hole morphology during the in-situ pre-growth annealing and the Si buffer layer growth are studied. Deposition of 5

  10. Fabrication and in-situ STM investigation of growth dynamics of semiconductor nanostructures grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Borisova, Svetlana

    2012-05-23

    Modern development of information technologies requires an introduction of new fundamental concepts, in order to create more efficient devices and to decrease their size. One of the most promising ways is to increase the functionality of silicon by integrating novel materials into Si-based production. This PhD thesis reports on the fabrication and investigation of the growth of semiconductor nanostructures on Si substrates by molecular beam epitaxy (MBE). In-situ scanning tunneling microscopy (STM) is a powerful technique in order to study morphological and electronic properties of the grown structures directly under ultra high vacuum (UHV) conditions. It is shown that the combination of MBE and in-situ STM enables the study of nucleation and growth dynamics at the atomic scale. It provides us with numerous information concerning the nucleation mechanism, the growth mode of the structures, adatom kinetics, influence of the lattice mismatch between the substrate and the grown structure as well as formation and morphology of crystal defects. The first part of the thesis focuses on the experimental realization based upon an existing setup. The construction of an in-situ UHV STM compatible with the MBE cluster and the technical improvement of the STM setup are described. Subsequently, test measurements are performed on the technologically most important surfaces, Ge (100) and Si (111). The second part of the thesis is dedicated to ordered small-period arrays of self-assembled Ge quantum dots (QDs) grown on pre-patterned Si (100) substrates. Small-period Ge QD crystals are highly interesting since band structure calculations indicate coupled electronic states of the QDs in the case of the small lateral period of approximately 30 nm. Small-period hole patterns with a period of 56 nm are fabricated by e-beam lithography on Si substrates. The evolution of the hole morphology during the in-situ pre-growth annealing and the Si buffer layer growth are studied. Deposition of 5

  11. Technology of fabrication of silicon-lithium detector with superficial junction

    International Nuclear Information System (INIS)

    Cabal Rodriguez, A.E.; Diaz Garcia, A.; Noriega Scull, C.

    1997-01-01

    The Silicon nuclear radiation detectors transform the charge produced within the semiconductor crystal, product of the impinges of particles and X rays, in pulses of voltage at the output of the preamplifier. The planar Silicon-Lithium (Si(Li)) detector with superficial junction is basically a Pin structure diode. By mean of the diffusion and drift of Lithium in the Silicon a compensated or depletion region was created. There the incident radiation interacts with the Silicon, producing an electric signal proportional to the detector's energy deposited in the semiconductor. The technological process of fabrication this kind of detectors comprises several stages, some of them complex and of long duration. They also demand a systematic control. The technological process of Si(Li) detector's fabrication was carried out. The detector's fabrication electric characteristics were measured in some steps. An obtained device was mounted in the holder within a cryostat, in order to work to temperature of the liquid nitrogen. The energy resolution of the detector was measured and the value was 180 eV for the line of 5.9 KeV of an Fe-55 source. This value has allowed to work with the detector in energy disperse X-rays fluorescence. (author) [es

  12. NIOSH Field Studies Team Assessment: Worker Exposure to Aerosolized Metal Oxide Nanoparticles in a Semiconductor Fabrication Facility

    OpenAIRE

    Brenner, Sara A.; Neu-Baker, Nicole M.; Eastlake, Adrienne C.; Beaucham, Catherine C.; Geraci, Charles L.

    2016-01-01

    The ubiquitous use of engineered nanomaterials – particulate materials measuring approximately 1–100 nanometers (nm) on their smallest axis, intentionally engineered to express novel properties – in semiconductor fabrication poses unique issues for protecting worker health and safety. Use of new substances or substances in a new form may present hazards that have yet to be characterized for their acute or chronic health effects. Uncharacterized or emerging occupational health hazards may exis...

  13. Smart fabric sensors and e-textile technologies: a review

    International Nuclear Information System (INIS)

    Castano, Lina M; Flatau, Alison B

    2014-01-01

    This paper provides a review of recent developments in the rapidly changing and advancing field of smart fabric sensor and electronic textile technologies. It summarizes the basic principles and approaches employed when building fabric sensors as well as the most commonly used materials and techniques used in electronic textiles. This paper shows that sensing functionality can be created by intrinsic and extrinsic modifications to textile substrates depending on the level of integration into the fabric platform. The current work demonstrates that fabric sensors can be tailored to measure force, pressure, chemicals, humidity and temperature variations. Materials, connectors, fabric circuits, interconnects, encapsulation and fabrication methods associated with fabric technologies prove to be customizable and versatile but less robust than their conventional electronics counterparts. The findings of this survey suggest that a complete smart fabric system is possible through the integration of the different types of textile based functional elements. This work intends to be a starting point for standardization of smart fabric sensing techniques and e-textile fabrication methods. (topical review)

  14. DEEMO: a new technology for the fabrication of microstructures

    NARCIS (Netherlands)

    Elders, J.; Jansen, Henricus V.; Elwenspoek, Michael Curt; Ehrfeld, W.

    1995-01-01

    The recent innovations in dry etching make it a promising technology for the fabrications of micromoulds. The high aspect ratios, directional freedom, low roughness, high etch rates and high selectivity with respect to the mask material allow a versatile fabrication process of micromoulds for

  15. HIP technologies for fusion reactor blankets fabrication

    International Nuclear Information System (INIS)

    Le Marois, G.; Federzoni, L.; Bucci, P.; Revirand, P.

    2000-01-01

    The benefit of HIP techniques applied to the fabrication of fusion internal components for higher performances, reliability and cost savings are emphasized. To demonstrate the potential of the techniques, design of new blankets concepts and mock-ups fabrication are currently performed by CEA. A coiled tube concept that allows cooling arrangement flexibility, strong reduction of the machining and number of welds is proposed for ITER IAM. Medium size mock-ups according to the WCLL breeding blanket concept have been manufactured. The fabrication of a large size mock-up is under progress. These activities are supported by numerical calculations to predict the deformations of the parts during HIP'ing. Finally, several HIP techniques issues have been identified and are discussed

  16. Advanced excimer laser technologies enable green semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  17. Development of technology for fabrication of lithium CPS on basis of CNT-reinforced carboxylic fabric

    International Nuclear Information System (INIS)

    Tazhibayeva, Irina; Baklanov, Viktor; Ponkratov, Yuriy; Abdullin, Khabibulla; Kulsartov, Timur; Gordienko, Yuriy; Zaurbekova, Zhanna; Lyublinski, Igor; Vertkov, Alexey; Skakov, Mazhyn

    2017-01-01

    Highlights: • Preliminary study of carboxylic fabric wettability with liquid lithium is presented. • Preliminary studies of carboxylic fabric wettability with liquid lithium consist in carrying out of experiments at temperatures 673,773 and 873 К in vacuum during long time. • A scheme of experimental device for manufacturing of lithium CPS and matrix filling procedure with liquid lithium are presented. • The concept of lithium limiter with CPS on basis of CNT-reinforced carboxylic fabric is proposed. - Abstract: The paper describes the analysis of liquid lithium interaction with materials based on carbon, the manufacture technology of capillary-porous system (CPS) matrix on basis of CNT-reinforced carboxylic fabric. Preliminary study of carboxylic fabric wettability with liquid lithium is presented. The development of technology includes: microstructural studies of carboxylic fabric before its CNT-reinforcing; validation of CNT-reinforcing technology; mode validation of CVD-method for CNT synthesize; study of synthesized carbon structures. Preliminary studies of carboxylic fabric wettability with liquid lithium consist in carrying out of experiments at temperatures 673, 773 and 873 К in vacuum during long time. The scheme of experimental device for manufacturing of lithium CPS and matrix filling procedure with liquid lithium are presented. The concept of lithium limiter with CPS on basis of CNT-reinforced carboxylic fabric is proposed.

  18. Development of technology for fabrication of lithium CPS on basis of CNT-reinforced carboxylic fabric

    Energy Technology Data Exchange (ETDEWEB)

    Tazhibayeva, Irina, E-mail: tazhibayeva@ntsc.kz [Institute of Atomic Energy, National Nuclear Center of RK, Kurchatov (Kazakhstan); Baklanov, Viktor; Ponkratov, Yuriy [Institute of Atomic Energy, National Nuclear Center of RK, Kurchatov (Kazakhstan); Abdullin, Khabibulla [Institute of Experimental and Theoretical Physics of Kazakh National University, Almaty (Kazakhstan); Kulsartov, Timur; Gordienko, Yuriy; Zaurbekova, Zhanna [Institute of Atomic Energy, National Nuclear Center of RK, Kurchatov (Kazakhstan); Lyublinski, Igor [JSC «Red Star», Moscow (Russian Federation); NRNU «MEPhI», Moscow (Russian Federation); Vertkov, Alexey [JSC «Red Star», Moscow (Russian Federation); Skakov, Mazhyn [Institute of Atomic Energy, National Nuclear Center of RK, Kurchatov (Kazakhstan)

    2017-04-15

    Highlights: • Preliminary study of carboxylic fabric wettability with liquid lithium is presented. • Preliminary studies of carboxylic fabric wettability with liquid lithium consist in carrying out of experiments at temperatures 673,773 and 873 К in vacuum during long time. • A scheme of experimental device for manufacturing of lithium CPS and matrix filling procedure with liquid lithium are presented. • The concept of lithium limiter with CPS on basis of CNT-reinforced carboxylic fabric is proposed. - Abstract: The paper describes the analysis of liquid lithium interaction with materials based on carbon, the manufacture technology of capillary-porous system (CPS) matrix on basis of CNT-reinforced carboxylic fabric. Preliminary study of carboxylic fabric wettability with liquid lithium is presented. The development of technology includes: microstructural studies of carboxylic fabric before its CNT-reinforcing; validation of CNT-reinforcing technology; mode validation of CVD-method for CNT synthesize; study of synthesized carbon structures. Preliminary studies of carboxylic fabric wettability with liquid lithium consist in carrying out of experiments at temperatures 673, 773 and 873 К in vacuum during long time. The scheme of experimental device for manufacturing of lithium CPS and matrix filling procedure with liquid lithium are presented. The concept of lithium limiter with CPS on basis of CNT-reinforced carboxylic fabric is proposed.

  19. Development of fabrication technology for ceramic nuclear fuel

    International Nuclear Information System (INIS)

    Lee, Young Woo; Sohn, D. S.; Na, S. H.

    2003-05-01

    The purpose of the study is to develop the fabrication technology of MOX fuel. The researches carried out during the last stage(1997. 4.∼2003. 3.) mainly consisted of ; study of MOX pellet fabrication technology for application and development of characterization technology for the aim of confirming the development of powder treatment technology and sintering technology and of the optimization of the above technologies and fabrication of Pu-MOX pellet specimens through an international joint collaboration between KAERI and PSI based on the fundamental technologies developed in KAERI. Based on the studies carried out and the results obtained during the last stage, more extensive studies for the process technologies of the unit processes were performed, in this year, for the purpose of development of indigenous overall MOX pellet fabrication process technology, relating process parameters among the unit processes and integrating these unit process technologies. Furthermore, for the preparation of transfer of relevant technologies to the industries, a feasibility study was performed on the commercialization of the technology developed in KAERI with the relevant industry in close collaboration

  20. Micro/nano-fabrication technologies for cell biology.

    Science.gov (United States)

    Qian, Tongcheng; Wang, Yingxiao

    2010-10-01

    Micro/nano-fabrication techniques, such as soft lithography and electrospinning, have been well-developed and widely applied in many research fields in the past decade. Due to the low costs and simple procedures, these techniques have become important and popular for biological studies. In this review, we focus on the studies integrating micro/nano-fabrication work to elucidate the molecular mechanism of signaling transduction in cell biology. We first describe different micro/nano-fabrication technologies, including techniques generating three-dimensional scaffolds for tissue engineering. We then introduce the application of these technologies in manipulating the physical or chemical micro/nano-environment to regulate the cellular behavior and response, such as cell life and death, differentiation, proliferation, and cell migration. Recent advancement in integrating the micro/nano-technologies and live cell imaging are also discussed. Finally, potential schemes in cell biology involving micro/nano-fabrication technologies are proposed to provide perspectives on the future research activities.

  1. Controlled fabrication of semiconductor-metal hybrid nano-heterostructures via site-selective metal photodeposition

    Science.gov (United States)

    Vela Becerra, Javier; Ruberu, T. Purnima A.

    2017-12-05

    A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.

  2. Technological aspects of gaseous pixel detectors fabrication

    NARCIS (Netherlands)

    Blanco Carballo, V.M.; Salm, Cora; Smits, Sander M.; Schmitz, Jurriaan; Melai, J.; Chefdeville, M.A.; van der Graaf, H.

    2007-01-01

    Integrated gaseous pixel detectors consisting of a metal punctured foil suspended in the order of 50μm over a pixel readout chip by means by SU-8 insulating pillars have been fabricated. SU-8 is used as sacrificial layer but metallization over uncrosslinked SU-8 presents adhesion and stress

  3. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  4. Development of YBCO tape conductor fabrication technology

    Energy Technology Data Exchange (ETDEWEB)

    Hong, G W; Kim, C J; Lee, H G. and others

    2001-08-01

    Superconductor when fabricated into wire shape is applied for developing electric power transmission cable, transformer, generator and SMES. Such superconducting power devices are capable of maximizing the efficiency of electricity and are anticipated to contribute for solving the energy problem of humankind. Furthermore the high temperature oxide superconductor developed in late 1980s is superconducting above boiling temperature of liquid nitrogen temperature has strong potential to realize superconducting power device and a lot of researches are being done in this field. Superconducting wire is the most important core material for developing superconducting power device and thermo-mechanical powder in tube process was developed to fabricated Ag/Bi-2223 conductor in long length having high critical current carrying capacity. Several companies fabricate and sell Ag/Bi-2223 superconducting wire longer than km length and used for developed electrical power device. But because of its inherent property of sharp decrease in current carrying capacity when applying high magnetic field, the application of Bi-2223 sire is limited as low as 20 K when the power device is in operating under high magnetic field. The YBCO tape conductor has the advantages of maintaining high critical current applying high magnetic field and can be used to most of the power device without special limitation. The metal substrate having good crystallographic texture and deposition technique which can deposit the good quality superconducting thin film continuously in large area are need to fabricate coated conductor, and this technique can be applied to develop the superconducting current limiter or magnetic field shielding device. A superconducting wire for using in high magnetic field is play a critical role in developing maglev, MRI, SMES, transformer, generator and motor and the continuous film deposition technique can be applied in other industry very much.

  5. Light emitting fabric technologies for photodynamic therapy.

    Science.gov (United States)

    Mordon, Serge; Cochrane, Cédric; Tylcz, Jean Baptiste; Betrouni, Nacim; Mortier, Laurent; Koncar, Vladan

    2015-03-01

    Photodynamic therapy (PDT) is considered to be a promising method for treating various types of cancer. A homogeneous and reproducible illumination during clinical PDT plays a determinant role in preventing under- or over-treatment. The development of flexible light sources would considerably improve the homogeneity of light delivery. The integration of optical fiber into flexible structures could offer an interesting alternative. This paper aims to describe different methods proposed to develop Side Emitting Optical Fibers (SEOF), and how these SEOF can be integrated in a flexible structure to improve light illumination of the skin during PDT. Four main techniques can be described: (i) light blanket integrating side-glowing optical fibers, (ii) light emitting panel composed of SEOF obtained by micro-perforations of the cladding, (iii) embroidery-based light emitting fabric, and (iv) woven-based light emitting fabric. Woven-based light emitting fabrics give the best performances: higher fluence rate, best homogeneity of light delivery, good flexibility. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Technological and organizational diversity and technical advance in the early history of the American semiconductor industry

    Science.gov (United States)

    Cohen, W.; Holbrook, D.; Klepper, S.

    1994-06-01

    This study examines the early years of the semiconductor industry and focuses on the roles played by different size firms in technologically innovative processes. A large and diverse pool of firms participated in the growth of the industry. Three related technological areas were chosen for in-depth analysis: integrated circuits, materials technology, and device packaging. Large business producing vacuum tubes dominated the early production of semiconductor devices. As the market for new devices grew during the 1950's, new firms were founded and existing firms from other industries, e.g. aircraft builders and instrument makers, began to pursue semiconductor electronics. Small firms began to cater to the emerging industry by supplying materials and equipment. These firms contributed to the development of certain aspects of one thousand firms that were playing some part in the semiconductor industry.

  7. Development of fabrication technology for CANDU advanced fuel -Development of the advanced CANDU technology-

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Chang Beom; Kim, Hyeong Soo; Kim, Sang Won; Seok, Ho Cheon; Shim, Ki Seop; Byeon, Taek Sang; Jang, Ho Il; Kim, Sang Sik; Choi, Il Kwon; Cho, Dae Sik; Sheo, Seung Won; Lee, Soo Cheol; Kim, Yoon Hoi; Park, Choon Ho; Jeong, Seong Hoon; Kang, Myeong Soo; Park, Kwang Seok; Oh, Hee Kwan; Jang, Hong Seop; Kim, Yang Kon; Shin, Won Cheol; Lee, Do Yeon; Beon, Yeong Cheol; Lee, Sang Uh; Sho, Dal Yeong; Han, Eun Deok; Kim, Bong Soon; Park, Cheol Joo; Lee, Kyu Am; Yeon, Jin Yeong; Choi, Seok Mo; Shon, Jae Moon [Korea Atomic Energy Res. Inst., Taejon (Korea, Republic of)

    1994-07-01

    The present study is to develop the advanced CANDU fuel fabrication technologies by means of applying the R and D results and experiences gained from localization of mass production technologies of CANDU fuels. The annual portion of this year study includes following: 1. manufacturing of demo-fuel bundles for out-of-pile testing 2. development of technologies for the fabrication and inspection of advanced fuels 3. design and munufacturing of fuel fabrication facilities 4. performance of fundamental studies related to the development of advanced fuel fabrication technology.

  8. Recent Progress on the DUPIC Fuel Fabrication Technology at KAERI

    International Nuclear Information System (INIS)

    Jung-Won Lee; Ho-Jin Ryu; Geun-Il Park; Kee-Chan Song

    2008-01-01

    Since 1991, KAERI has been developing the DUPIC fuel cycle technology. The concept of a direct use of spent PWR fuel in Candu reactors (DUPIC) is based on a dry processing method to re-fabricate Candu fuel from spent PWR fuel without any intentional separation of the fissile materials and fission products. A DUPIC fuel pellet was successfully fabricated and the DUPIC fuel element fabrication processes were qualified on the basis of a Quality Assurance program. Consequently, the DUPIC fuel fabrication technology was verified and demonstrated on a laboratory-scale. Recently, the fuel discharge burn-up of PWRs has been extended to reduce the amount of spent fuel and the fuel cycle costs. Considering this trend of extending the fuel burn-up in PWRs, the DUPIC fuel fabrication technology should be improved to process high burn-up spent fuels. Particularly the release behavior of cesium from the pellet prepared with a high burn-up spent fuel was assessed. an improved DUPIC fuel fabrication technology was experimentally established with a fuel burn-up of 65,000 MWd/tU. (authors)

  9. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  10. Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

    International Nuclear Information System (INIS)

    Tsukamoto, Katsuhiro; Kuroi, Takashi; Kawasaki, Yoji

    2011-01-01

    Industrial aspects of the evolution of ion implantation technology will be reviewed, and their impact on the semiconductor industry will be discussed. The main topics will be the technology's application to the most advanced, ultra scaled CMOS, and to power devices, as well as productivity improvements in implantation technology. Technological insights into future developments in ion-related technologies for emerging industries will also be presented.

  11. Colloidal Sb2S3 Nanocrystals: Synthesis, Characterization and Fabrication of Solid-State Semiconductor Sensitized Solar Cell

    KAUST Repository

    Abulikemu, Mutalifu

    2015-12-26

    Inorganic nanocrystals composed of earth-abundant and non-toxic elements are crucial to fabricated sustainable photovoltaic devices in large scale. In this study, various-shaped and different phases of antimony sulfide nanocrystals, which is composed of non-scarce and non-toxic elements, are synthesized using hot-injection colloidal method. The effect of various synthetic parameters on the final morphology is explored. Also, foreign ion (Chlorine) effects on the morphology of Sb2S3 nanocrystals have been observed. Structural, optical and morphological properties of the nanocrystals were investigated, and Sb2S3 nanocrystal-based solid-state semiconductor-sensitized solar cells were fabricated using as-prepared nanocrystals. We achieved promising power conversion efficiencies of 1.48%.

  12. Colloidal Sb2S3 Nanocrystals: Synthesis, Characterization and Fabrication of Solid-State Semiconductor Sensitized Solar Cell

    KAUST Repository

    Abulikemu, Mutalifu; Del Gobbo, Silvano; Anjum, Dalaver H.; Malik, Mohammad A; Bakr, Osman

    2015-01-01

    Inorganic nanocrystals composed of earth-abundant and non-toxic elements are crucial to fabricated sustainable photovoltaic devices in large scale. In this study, various-shaped and different phases of antimony sulfide nanocrystals, which is composed of non-scarce and non-toxic elements, are synthesized using hot-injection colloidal method. The effect of various synthetic parameters on the final morphology is explored. Also, foreign ion (Chlorine) effects on the morphology of Sb2S3 nanocrystals have been observed. Structural, optical and morphological properties of the nanocrystals were investigated, and Sb2S3 nanocrystal-based solid-state semiconductor-sensitized solar cells were fabricated using as-prepared nanocrystals. We achieved promising power conversion efficiencies of 1.48%.

  13. Fabrication technology of spherical fuel element for HTR-10

    International Nuclear Information System (INIS)

    He Jun; Zou Yanwen; Liang Tongxiang; Qiu Xueliang

    2002-01-01

    R and D on the fabrication technology of the spherical fuel elements for the 10 MW HTR Test Module (HTR-10) began from 1986. Cold quasi-isostatic molding with a silicon rubber die is used for manufacturing the spherical fuel elements.The fabrication technology and the graphite matrix materials were investigated and optimized. Twenty five batches of fuel elements, about 11000 of the fuel elements, have been produced. The cold properties of the graphite matrix materials satisfied the design specifications. The mean free uranium fraction of 25 batches was 5 x 10 -5

  14. Radiation processing of polymers and semiconductors at the Institute of Nuclear Chemistry and Technology

    International Nuclear Information System (INIS)

    Zimek, Z.; Przybytniak, G.; Kaluska, I.

    2006-01-01

    R(and)D studies in the field of radiation technology in Poland are mostly concentrated at the Institute of Nuclear Chemistry and Technology (INCT). The results of the INCT works on polymer and semiconductor modification have been implemented in various branches of national economy, particularly in industry and medicine. Radiation technology for polymer modification was implemented in the middle of the 1970-ties. Among others, the processes of irradiation and heat shrinkable products expansion have been developed. The transfer of this technology to Polish industry was performed in the middle of the 1980-ties. The present study aims at the formulation of new PE composites better suited to new generation of heat shrinkable products, for example, a new generation of hot-melt adhesives has been developed to meet specific requirements of customers. Modified polypropylene was used for the production of medical devices sterilized by radiation, especially disposable syringes, to overcome the low radiation resistance of the basic material. Modified polypropylene (PP-M) has been formulated at the INCT to provide material suitable for medical application and radiation sterilization process. Modification of semiconductor devices by EB was applied on an industrial scale since 1978 when the INCT and the LAMINA semiconductor factory successfully adopted that technology to improve specific semiconductor devices. This activity is continued on commercial basis where the INCT facilities served to contract irradiation of certain semiconductor devices according to the manufacturing program of the Polish factory and customers from abroad. (author)

  15. High-performance semiconductors based on oligocarbazole–thiophene derivatives for solution-fabricated organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Gung-Pei; Hsieh, Kuo-Huang, E-mail: khhsieh@ntu.edu.tw

    2013-01-01

    A series of oligocarbazole–thiophenes based on a constant conjugate backbone (carbazole–bithiophene–carbazole) with various n-alkyl chain lengths was prepared for application to organic field-effect transistors (OFETs). The lengths of the n-alkyl substitutions attached on 9-position of carbazole moieties were methyl (CCzT2), hexyl (C6CzT2), dodecyl (C12CzT2), and octadecyl (C18CzT2), called CxCzT2. Variations of n-alkyl chain lengths are proposed to figure out the optimization of OFET performance via solution fabrication of the active layer. Before fabricating OFET devices, the thermal, optical, and electrochemical properties of CxCzT2 were fully characterized with thermogravimetric analysis, differential scanning calorimetry, ultraviolet–visible spectroscopy, and cyclic voltammetry to realize the relationships of the structure to the properties. After fabricating CxCzT2 on Si/SiO{sub 2} substrates via solution casting, the thin film morphologies were also studied with polarizing optical microscopy, atomic force microscopy, and X-ray diffraction to investigate the structural relationship to OFET performance. A higher hole mobility was observed with C12CzT2 (3.6 × 10{sup −2} cm{sup 2} V{sup −1} s{sup −1}) due to its liquid crystal properties, and the hole mobility could be further improved to 1.2 × 10{sup −1} cm{sup 2} V{sup −1} s{sup −1} by the introduction of a phenyl-self-assembled monolayer on the Si/SiO{sub 2} substrates. The excellent OFET performances of C12CzT2 by solution–fabrication could be considered as a promising candidate for high-end OFET application. - Highlights: ► These oligomeric semiconductors were synthesized rapidly. ► The thermal, optical, and electrochemical properties were fully investigated. ► The liquid crystal properties can be obtained via alkyl chain length adjustment. ► These oligomeric semiconductors can be solution-fabricated. ► One of these oligomeric semiconductors yields high field-effect hole

  16. Fabrication of solid-state secondary battery using semiconductors and evaluation of its charge/discharge characteristics

    Science.gov (United States)

    Sasaki, Atsuya; Sasaki, Akito; Hirabayashi, Hideaki; Saito, Shuichi; Aoki, Katsuaki; Kataoka, Yoshinori; Suzuki, Koji; Yabuhara, Hidehiko; Ito, Takahiro; Takagi, Shigeyuki

    2018-04-01

    Li-ion batteries have attracted interest for use as storage batteries. However, the risk of fire has not yet been resolved. Although solid Li-ion batteries are possible alternatives, their performance characteristics are unsatisfactory. Recently, research on utilizing the accumulation of carriers at the trap levels of semiconductors has been performed. However, the detailed charge/discharge characteristics and principles have not been reported. In this report, we attempted to form new n-type oxide semiconductor/insulator/p-type oxide semiconductor structures. The battery characteristics of these structures were evaluated by charge/discharge measurements. The obtained results clearly indicated the characteristics of rechargeable batteries. Furthermore, the fabricated structure accumulated an approximately 5000 times larger number of carriers than a parallel plate capacitor. Additionally, by constructing circuit models based on the experimental results, the charge/discharge mechanisms were considered. This is the first detailed experimental report on a rechargeable battery that operates without the double injection of ions and electrons.

  17. Radiation immune RAM semiconductor technology for the 80's. [Random Access Memory

    Science.gov (United States)

    Hanna, W. A.; Panagos, P.

    1983-01-01

    This paper presents current and short term future characteristics of RAM semiconductor technologies which were obtained by literature survey and discussions with cognizant Government and industry personnel. In particular, total ionizing dose tolerance and high energy particle susceptibility of the technologies are addressed. Technologies judged compatible with spacecraft applications are ranked to determine the best current and future technology for fast access (less than 60 ns), radiation tolerant RAM.

  18. Fabrication of metal/semiconductor nanocomposites by selective laser nano-welding.

    Science.gov (United States)

    Yu, Huiwu; Li, Xiangyou; Hao, Zhongqi; Xiong, Wei; Guo, Lianbo; Lu, Yongfeng; Yi, Rongxing; Li, Jiaming; Yang, Xinyan; Zeng, Xiaoyan

    2017-06-01

    A green and simple method to prepare metal/semiconductor nanocomposites by selective laser nano-welding metal and semiconductor nanoparticles was presented, in which the sizes, phases, and morphologies of the components can be maintained. Many types of nanocomposites (such as Ag/TiO 2 , Ag/SnO 2 , Ag/ZnO 2 , Pt/TiO 2 , Pt/SnO 2 , and Pt/ZnO) can be prepared by this method and their corresponding performances were enhanced.

  19. UV laser drilling of SiC for semiconductor device fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, Olaf; Schoene, Gerd; Wernicke, Tim; John, Wilfred; Wuerfl, Joachim; Traenkle, Guenther [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2007-04-15

    Pulsed UV laser processing is used to drill micro holes in silicon carbide (SiC) wafers supporting AlGaN/GaN transistor structures. Direct laser ablation using nanosecond pulses has been proven to provide an efficient way to create through and blind holes in 400 {mu}m thick SiC. When drilling through, openings in the front pads are formed, while blind holes stop {approx}40 {mu}m before the backside and were advanced to the electrical contact pad by subsequent plasma etching without an additional mask. Low induction connections (vias) between the transistor's source pads and the ground on the backside were formed by metallization of the holes. Micro vias having aspect ratios of 5-6 have been processed in 400 {mu}m SiC. The process flow from wafer layout to laser drilling is available including an automated beam alignment that allows a positioning accuracy of {+-}1 {mu}m with respect to existing patterns on the wafer. As proven by electrical dc and rf measurements the laser-assisted via technologies have successfully been implemented into fabrication of AlGaN/GaN high-power transistors.

  20. Microwaves integrated circuits: hybrids and monolithics - fabrication technology

    International Nuclear Information System (INIS)

    Cunha Pinto, J.K. da

    1983-01-01

    Several types of microwave integrated circuits are presented together with comments about technologies and fabrication processes; advantages and disadvantages in their utilization are analysed. Basic structures, propagation modes, materials used and major steps in the construction of hybrid thin film and monolithic microwave integrated circuits are described. Important technological applications are revised and main activities of the microelectronics lab. of the University of Sao Paulo (Brazil) in the field of hybrid and monolithic microwave integrated circuits are summarized. (C.L.B.) [pt

  1. Printing technologies in fabrication of drug delivery systems.

    Science.gov (United States)

    Kolakovic, Ruzica; Viitala, Tapani; Ihalainen, Petri; Genina, Natalja; Peltonen, Jouko; Sandler, Niklas

    2013-12-01

    There has been increased activity in the field recently regarding the development and research on various printing techniques in fabrication of dosage forms and drug delivery systems. These technologies may offer benefits and flexibility in manufacturing, potentially paving the way for personalized dosing and tailor-made dosage forms. In this review, the most recent observations and advancements in fabrication of drug delivery systems by utilizing printing technologies are summarized. A general overview of 2D printing techniques is presented including a review of the most recent literature where printing techniques are used in fabrication of drug delivery systems. The future perspectives and possible impacts on formulation strategies, flexible dosing and personalized medication of using printing techniques for fabrication of drug delivery systems are discussed. It is evident that there is an urgent need to meet the challenges of rapidly growing trend of personalization of medicines through development of flexible drug-manufacturing approaches. In this context, various printing technologies, such as inkjet and flexography, can play an important role. Challenges on different levels exist and include: i) technological development of printers and production lines; ii) printable formulations and carrier substrates; iii) quality control and characterization; and iv) regulatory perspectives.

  2. Printing technologies in fabrication of drug delivery systems

    DEFF Research Database (Denmark)

    Kolakovic, Ruzica; Viitala, Tapani; Ihalainen, Petri

    2013-01-01

    INTRODUCTION: There has been increased activity in the field recently regarding the development and research on various printing techniques in fabrication of dosage forms and drug delivery systems. These technologies may offer benefits and flexibility in manufacturing, potentially paving the way...... for personalized dosing and tailor-made dosage forms.\

  3. Semiconductor technology in protein kinase research and drug discovery: sensing a revolution.

    Science.gov (United States)

    Bhalla, Nikhil; Di Lorenzo, Mirella; Estrela, Pedro; Pula, Giordano

    2017-02-01

    Since the discovery of protein kinase activity in 1954, close to 600 kinases have been discovered that have crucial roles in cell physiology. In several pathological conditions, aberrant protein kinase activity leads to abnormal cell and tissue physiology. Therefore, protein kinase inhibitors are investigated as potential treatments for several diseases, including dementia, diabetes, cancer and autoimmune and cardiovascular disease. Modern semiconductor technology has recently been applied to accelerate the discovery of novel protein kinase inhibitors that could become the standard-of-care drugs of tomorrow. Here, we describe current techniques and novel applications of semiconductor technologies in protein kinase inhibitor drug discovery. Copyright © 2016 Elsevier Ltd. All rights reserved.

  4. Semiconductor measurement technology: reliability technology for cardiac pacemakers 2: a workshop report, 1976

    International Nuclear Information System (INIS)

    Schafft, H.A.

    1977-01-01

    Summaries are presented of 12 invited talks on the following topics: the procurement and assurance of high reliability electronic parts, leak rate and moisture measurements, pacemaker batteries, and pacemaker leads. The workshop, second in a series, was held in response to strong interest expressed by the pacemaker community to address technical questions relevant to the enhancement and assurance of cardiac pacemaker reliability. Discussed at the workshop were a process validation wafer concept for assuring process uniformity in device chips; screen tests for assuring reliable electronic parts; reliability prediction; reliability comparison of semiconductor technologies; mechanisms of short-circuiting dendritic growths; details of helium and radioisotope leak test methods; a study to correlate package leak rates, as measured with test gasses, and actual moisture infusion; battery life prediction; microcalorimetric measurements to nondestructively evaluate batteries for pacemakers; and an engineer's and a physician's view of the present status of pacemaker leads. References are included with most of the reports

  5. Ohmic metallization technology for wide band-gap semiconductors

    International Nuclear Information System (INIS)

    Iliadis, A.A.; Vispute, R.D.; Venkatesan, T.; Jones, K.A.

    2002-01-01

    Ohmic contact metallizations on p-type 6H-SiC and n-type ZnO using a novel approach of focused ion beam (FIB) surface-modification and direct-write metal deposition will be reviewed, and the properties of such focused ion beam assisted non-annealed contacts will be reported. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10 -4 Ω cm 2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10 -5 Ω cm 2 range for surface-modified and pulse laser deposited TiN contacts. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer

  6. Synthesis of a nano-silver metal ink for use in thick conductive film fabrication applied on a semiconductor package.

    Directory of Open Access Journals (Sweden)

    Lai Chin Yung

    Full Text Available The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency identification (RFID and light emitting diode (LED industries, with limited usage in semiconductor packaging. The use of printed ink in semiconductor IC packaging is limited by several factors such as poor electrical performance and mechanical strength. Poor adhesion of the printed metal track to the epoxy molding compound is another critical factor that has caused a decline in interest in the application of printing technology to the semiconductor industry. In this study, two different groups of adhesion promoters, based on metal and polymer groups, were used to promote adhesion between the printed ink and the epoxy molding substrate. The experimental data show that silver ink with a metal oxide adhesion promoter adheres better than silver ink with a polymer adhesion promoter. This result can be explained by the hydroxyl bonding between the metal oxide promoter and the silane grouping agent on the epoxy substrate, which contributes a greater adhesion strength compared to the polymer adhesion promoter. Hypotheses of the physical and chemical functions of both adhesion promoters are described in detail.

  7. Development of technology of high density LEU dispersion fuel fabrication

    International Nuclear Information System (INIS)

    Wiencek, T.; Totev, T.

    2007-01-01

    Advanced Materials Fabrication Facilities at Argonne National Laboratory have been involved in development of LEU dispersion fuel for research and test reactors from the beginning of RERTR program. This paper presents development of technology of high density LEU dispersion fuel fabrication for full size plate type fuel elements. A brief description of Advanced Materials Fabrication Facilities where development of the technology was carried out is given. A flow diagram of the manufacturing process is presented. U-Mo powder was manufactured by the rotating electrode process. The atomization produced a U-Mo alloy powder with a relatively uniform size distribution and a nearly spherical shape. Test plates were fabricated using tungsten and depleted U-7 wt.% Mo alloy, 4043 Al and Al-2 wt% Si matrices with Al 6061 aluminum alloy for the cladding. During the development of the technology of manufacturing of full size high density LEU dispersion fuel plates special attention was paid to meet the required homogeneity, bonding, dimensions, fuel out of zone and other mechanical characteristics of the plates.

  8. Abatement of waste gases and water during the processes of semiconductor fabrication.

    Science.gov (United States)

    Wen, Rui-mei; Liang, Jun-wu

    2002-10-01

    The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

  9. Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

    Energy Technology Data Exchange (ETDEWEB)

    Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Asakura, Yuji [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Yokoyama, Haruki [NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)

    2014-06-30

    We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

  10. Analysis of technology and development plan on Lithography process of display industry and semiconductor

    International Nuclear Information System (INIS)

    2005-02-01

    This reports the seminar on Lithography in 2005, which includes these contents; Introduction of Lithography, equipment in NNFC, Exposure technology with fabrication, basic and application optics, RET and Lens aberrations, Alignment and Overlay and Metrology, Resist process with prime, mechanism, issues, resist technology and track system, Mask and OPC such as mask, fabrication, mask technology, proximity effect and OPC, Next generation, Lithography with NGL, Immersion and imprint. In the last, there are questions and answers.

  11. Fabrication and operation methods of a one-time programmable (OTP) nonvolatile memory (NVM) based on a metal-oxide-semiconductor structure

    International Nuclear Information System (INIS)

    Cho, Seongjae; Lee, Junghoon; Jung, Sunghun; Park, Sehwan; Park, Byunggook

    2011-01-01

    In this paper, a novel one-time programmable (OTP) nonvolatile memory (NVM) device and its array based on a metal-insulator-semiconductor (MIS) structure is proposed. The Iindividual memory device has a vertical channel of a silicon diode. Historically, OTP memories were widely used for read-only-memories (ROMs), in which the most basic system architecture model was to store central processing unit (CPU) instructions. By grafting the nanoscale fabrication technology and novel structuring onto the concept of the OTP memory, innovative high-density NVM appliances for mobile storage media may be possible. The program operation is performed by breaking down the thin oxide layer between the pn diode structure and the wordline (WL). The programmed state can be identified by an operation that reads the leakage currents through the broken oxide. Since the proposed OTP NVM is based on neither a transistor structure nor a charge storing mechanism, it is highly reliable and functional for realizing the ultra-large scale integration. The operation physics and the fabrication processes are also explained in detail.

  12. Efficient thin-film stack characterization using parametric sensitivity analysis for spectroscopic ellipsometry in semiconductor device fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Likhachev, D.V., E-mail: dmitriy.likhachev@globalfoundries.com

    2015-08-31

    During semiconductor device fabrication, control of the layer thicknesses is an important task for in-line metrology since the correct thickness values are essential for proper device performance. At the present time, ellipsometry is widely used for routine process monitoring and process improvement as well as characterization of various materials in the modern nanoelectronic manufacturing. The wide recognition of this technique is based on its non-invasive, non-intrusive and non-destructive nature, high measurement precision, accuracy and speed, and versatility to characterize practically all types of materials used in modern semiconductor industry (dielectrics, semiconductors, metals, polymers, etc.). However, it requires the use of one of the multi-parameter non-linear optimization methods due to its indirect nature. This fact creates a big challenge for analysis of multilayered structures since the number of simultaneously determined model parameters, for instance, thin film thicknesses and model variables related to film optical properties, should be restricted due to parameter cross-correlations. In this paper, we use parametric sensitivity analysis to evaluate the importance of various model parameters and to suggest their optimal search ranges. In this work, the method is applied practically for analysis of a few structures with up to five-layered film stack. It demonstrates an evidence-based improvement in accuracy of multilayered thin-film thickness measurements which suggests that the proposed approach can be useful for industrial applications. - Highlights: • An improved method for multilayered thin-film stack characterization is proposed. • The screening-type technique based on so-called “elementary effects” was employed. • The model parameters were ranked according to relative importance for model output. • The method is tested using two examples of complex thin-film stack characterization. • The approach can be useful in many practical

  13. Efficient thin-film stack characterization using parametric sensitivity analysis for spectroscopic ellipsometry in semiconductor device fabrication

    International Nuclear Information System (INIS)

    Likhachev, D.V.

    2015-01-01

    During semiconductor device fabrication, control of the layer thicknesses is an important task for in-line metrology since the correct thickness values are essential for proper device performance. At the present time, ellipsometry is widely used for routine process monitoring and process improvement as well as characterization of various materials in the modern nanoelectronic manufacturing. The wide recognition of this technique is based on its non-invasive, non-intrusive and non-destructive nature, high measurement precision, accuracy and speed, and versatility to characterize practically all types of materials used in modern semiconductor industry (dielectrics, semiconductors, metals, polymers, etc.). However, it requires the use of one of the multi-parameter non-linear optimization methods due to its indirect nature. This fact creates a big challenge for analysis of multilayered structures since the number of simultaneously determined model parameters, for instance, thin film thicknesses and model variables related to film optical properties, should be restricted due to parameter cross-correlations. In this paper, we use parametric sensitivity analysis to evaluate the importance of various model parameters and to suggest their optimal search ranges. In this work, the method is applied practically for analysis of a few structures with up to five-layered film stack. It demonstrates an evidence-based improvement in accuracy of multilayered thin-film thickness measurements which suggests that the proposed approach can be useful for industrial applications. - Highlights: • An improved method for multilayered thin-film stack characterization is proposed. • The screening-type technique based on so-called “elementary effects” was employed. • The model parameters were ranked according to relative importance for model output. • The method is tested using two examples of complex thin-film stack characterization. • The approach can be useful in many practical

  14. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

    Science.gov (United States)

    Moustakas, Theodore D.; Paiella, Roberto

    2017-10-01

    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  15. High Efficient THz Emission From Unbiased and Biased Semiconductor Nanowires Fabricated Using Electron Beam Lithography

    Energy Technology Data Exchange (ETDEWEB)

    Balci, Soner; Czaplewski, David A.; Jung, Il Woong; Kim, Ju-Hyung; Hatami, Fariba; Kung, Patrick; Kim, Seongsin Margaret

    2017-07-01

    Besides having perfect control on structural features, such as vertical alignment and uniform distribution by fabricating the wires via e-beam lithography and etching process, we also investigated the THz emission from these fabricated nanowires when they are applied DC bias voltage. To be able to apply a voltage bias, an interdigitated gold (Au) electrode was patterned on the high-quality InGaAs epilayer grown on InP substrate bymolecular beam epitaxy. Afterwards, perfect vertically aligned and uniformly distributed nanowires were fabricated in between the electrodes of this interdigitated pattern so that we could apply voltage bias to improve the THz emission. As a result, we achieved enhancement in the emitted THz radiation by ~four times, about 12 dB increase in power ratio at 0.25 THz with a DC biased electric field compared with unbiased NWs.

  16. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  17. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  18. Fabrication and characterization of semiconductor lasers of Pb1-x Snx Te

    International Nuclear Information System (INIS)

    Abramof, E.; Ferreira, S.O.; Bandeira, I.N.

    1987-07-01

    The fabrication and characterization of PbTe homostructure diode-lasers are described. The threshold current density is in the range between 2.5 and 10 KA/cm 2 and the factors that lead to the device degradation are discussed. (author) [pt

  19. NASA funding opportunities for optical fabrication and testing technology development

    Science.gov (United States)

    Stahl, H. Philip

    2013-09-01

    NASA requires technologies to fabricate and test optical components to accomplish its highest priority science missions. The NRC ASTRO2010 Decadal Survey states that an advanced large-aperture UVOIR telescope is required to enable the next generation of compelling astrophysics and exo-planet science; and, that present technology is not mature enough to affordably build and launch any potential UVOIR mission concept. The NRC 2012 NASA Space Technology Roadmaps and Priorities Report states that the highest priority technology in which NASA should invest to `Expand our understanding of Earth and the universe' is next generation X-ray and UVOIR telescopes. Each of the Astrophysics division Program Office Annual Technology Reports (PATR) identifies specific technology needs. NASA has a variety of programs to fund enabling technology development: SBIR (Small Business Innovative Research); the ROSES APRA and SAT programs (Research Opportunities in Space and Earth Science; Astrophysics Research and Analysis program; Strategic Astrophysics Technology program); and several Office of the Chief Technologist (OCT) programs.

  20. Fabrication of Circuit QED Quantum Processors, Part 2: Advanced Semiconductor Manufacturing Perspectives

    Science.gov (United States)

    Michalak, D. J.; Bruno, A.; Caudillo, R.; Elsherbini, A. A.; Falcon, J. A.; Nam, Y. S.; Poletto, S.; Roberts, J.; Thomas, N. K.; Yoscovits, Z. R.; Dicarlo, L.; Clarke, J. S.

    Experimental quantum computing is rapidly approaching the integration of sufficient numbers of quantum bits for interesting applications, but many challenges still remain. These challenges include: realization of an extensible design for large array scale up, sufficient material process control, and discovery of integration schemes compatible with industrial 300 mm fabrication. We present recent developments in extensible circuits with vertical delivery. Toward the goal of developing a high-volume manufacturing process, we will present recent results on a new Josephson junction process that is compatible with current tooling. We will then present the improvements in NbTiN material uniformity that typical 300 mm fabrication tooling can provide. While initial results on few-qubit systems are encouraging, advanced processing control is expected to deliver the improvements in qubit uniformity, coherence time, and control required for larger systems. Research funded by Intel Corporation.

  1. Proceedings of defect engineering in semiconductor growth, processing and device technology

    International Nuclear Information System (INIS)

    Ashok, S.; Chevallier, J.; Sumino, K.; Weber, E.

    1992-01-01

    This volume results from a symposium that was part of the 1992 Spring Meeting of the Materials Research Society, held in San Francisco from April 26 to May 1, 1992. The symposium, entitled Defect Engineering in Semiconductor Growth, Processing and Device Technology, was the first of its kind at MRS and brought together academic and industrial researchers with varying perspectives on defects in semiconductors. Its aim was to go beyond defect control, and focus instead on deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. While the concept of defect engineering has at least a vague perception in techniques such as impurity/defect gettering and the use of the EL2 level in GaAs, more extensive as well as subtle uses of defects are emerging to augment the field. This symposium was intended principally to encourage creative new applications of defects in all aspects of semiconductor technology. The organization of this proceedings volume closely follows the topics around which the sessions were built. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects, their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. The issues addressed by the papers on defects in thin films include impurity and stoichiometry control, defects created by plasmas and the use of electron/ion irradiation for doping control

  2. Plastic use in technology of scintillation detector fabrication

    International Nuclear Information System (INIS)

    Mlika, V.

    1977-01-01

    The technique of plastic mandrel fabrication for scintillation detectors is developed. ''Forsan 548'' (thermopolimer of ABS type) and ''Krasten 127'' (polystyrene) are used. The mandrel is fabricated by the casting method under pressure with a subsequent parts adhesion. An adhesive substance is applied on the basis of polymerizing monomer of acrylate rotors and organic polysis cyanates. The developed construction consists totally of 5 components, only one of them being machined (lightquide). Testing under trying conditions (during 300 hours at the temperature from -30 deg to +50 deg C under the silicon oil layer or at the humidity up to 95% have shown high reliability of the construction. It is supposed, that the suggested technology will economize 3, 4 hours of turning lathe work for one mandrel and will reduce for 1-3 hours the scintillation mandrel frlming process

  3. Application of plasma deposition technology for nuclear fuel fabrication

    International Nuclear Information System (INIS)

    Jung, I. H.; Moon, J. S.; Park, H. S.; Song, K. C.; Lee, C. Y.; Kang, K. H.; Ryu, H. J.; Kim, H. S.; Yang, M. S.

    2001-01-01

    Yttria-stabilized-zirconia (m.p. 2670.deg. C), was deposited by induction plasma spraying system with a view to develop a new nuclear fuel fabrication technology. To fabricate the dense pellets, the spraying condition was optimized through the process parameters such as, chamber pressure, plasma plate power, powder spraying distance, sheath gas composition, probe position particle size and its morphology. The results with a 5mm thick deposit on rectangular planar graphite substrates showed 97.11% theoretical density, when the sheath gas flow rate was Ar/H 2 120/20 L/min, probe position 8cm, particle size-75 μm and spraying distance 22cm. The microstructure of YSZ deposit by ICP was lamellae and columnar perpendicular to the spraying direction. In the bottom part near the substrate, small equiaxed grains bounded in a layer. In the middle part, relatively regular size of columnar grains with excellent bonding each other were distinctive

  4. Hollow Nanospheres Array Fabrication via Nano-Conglutination Technology.

    Science.gov (United States)

    Zhang, Man; Deng, Qiling; Xia, Liangping; Shi, Lifang; Cao, Axiu; Pang, Hui; Hu, Song

    2015-09-01

    Hollow nanospheres array is a special nanostructure with great applications in photonics, electronics and biochemistry. The nanofabrication technique with high resolution is crucial to nanosciences and nano-technology. This paper presents a novel nonconventional nano-conglutination technology combining polystyrenes spheres (PSs) self-assembly, conglutination and a lift-off process to fabricate the hollow nanospheres array with nanoholes. A self-assembly monolayer of PSs was stuck off from the quartz wafer by the thiol-ene adhesive material, and then the PSs was removed via a lift-off process and the hollow nanospheres embedded into the thiol-ene substrate was obtained. Thiolene polymer is a UV-curable material via "click chemistry" reaction at ambient conditions without the oxygen inhibition, which has excellent chemical and physical properties to be attractive as the adhesive material in nano-conglutination technology. Using the technique, a hollow nanospheres array with the nanoholes at the diameter of 200 nm embedded into the rigid thiol-ene substrate was fabricated, which has great potential to serve as a reaction container, catalyst and surface enhanced Raman scattering substrate.

  5. Fabrication of highly nonlinear germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots using atomization doping process and its optical nonlinearity.

    Science.gov (United States)

    Ju, Seongmin; Watekar, Pramod R; Han, Won-Taek

    2011-01-31

    Germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots (SQDs) in the core was fabricated by using the atomization process in modified chemical vapor deposition (MCVD) process. The absorption bands attributed to PbTe semiconductor quantum dots in the fiber core were found to appear at around 687 nm and 1055 nm. The nonlinear refractive index measured by the long-period fiber grating (LPG) pair method upon pumping with laser diode at 976.4 nm was estimated to be ~1.5 × 10(-16) m2/W.

  6. [Application of next-generation semiconductor sequencing technologies in genetic diagnosis of inherited cardiomyopathies].

    Science.gov (United States)

    Zhao, Yue; Zhang, Hong; Xia, Xue-shan

    2015-07-01

    Inherited cardiomyopathy is the most common hereditary cardiac disease. It also causes a significant proportion of sudden cardiac deaths in young adults and athletes. So far, approximately one hundred genes have been reported to be involved in cardiomyopathies through different mechanisms. Therefore, the identification of the genetic basis and disease mechanisms of cardiomyopathies are important for establishing a clinical diagnosis and genetic testing. Next-generation semiconductor sequencing (NGSS) technology platform is a high-throughput sequencer capable of analyzing clinically derived genomes with high productivity, sensitivity and specificity. It was launched in 2010 by Life Technologies of USA, and it is based on a high density semiconductor chip, which was covered with tens of thousands of wells. NGSS has been successfully used in candidate gene mutation screening to identify hereditary disease. In this review, we summarize these genetic variations, challenge and application of NGSS in inherited cardiomyopathy, and its value in disease diagnosis, prevention and treatment.

  7. Development of parametric material, energy, and emission inventories for wafer fabrication in the semiconductor industry.

    Science.gov (United States)

    Murphy, Cynthia F; Kenig, George A; Allen, David T; Laurent, Jean-Philippe; Dyer, David E

    2003-12-01

    Currently available data suggest that most of the energy and material consumption related to the production of an integrated circuit is due to the wafer fabrication process. The complexity of wafer manufacturing, requiring hundreds of steps that vary from product to product and from facility to facility and which change every few years, has discouraged the development of material, energy, and emission inventory modules for the purpose of insertion into life cycle assessments. To address this difficulty, a flexible, process-based system for estimating material requirements, energy requirements, and emissions in wafer fabrication has been developed. The method accounts for mass and energy use atthe unit operation level. Parametric unit operation modules have been developed that can be used to predict changes in inventory as the result of changes in product design, equipment selection, or process flow. A case study of the application of the modules is given for energy consumption, but a similar methodology can be used for materials, individually or aggregated.

  8. A study on fabrication technology of ceramic overpack

    International Nuclear Information System (INIS)

    Teshima, T.; Ishikawa, H.; Sasaki, N.; Karita, Y.; Katsumoto, K.

    1990-03-01

    The conceptual design and fabrication test of a full-scale ceramic overpack were performed from the viewpoint of structural barriers as a part of program to evaluate their potential use as overpack under conditions of deep geological disposal. Materials investigated were porcelain (used for insulators) and Al 2 O 3 with high purity of 99.7 %. The selected design consisted of a cylindrical body with hemispherical heads at each end. The design thickness of overpack is the sum of the structural thickness and corrosion allowance. The thickness required to resist the lithostatic pressure was estimated by the basic cylinder buckling formulas and finite element stress analyses in both case of uniform and non-uniform external pressure conditions. These analyses showed that structural thickness of 119 mm was necessary for overpack of porcelain and 40 mm for Al 2 O 3 under the predicted maximum uniform pressure. In addition, fracture probability of delayed failure, one of significant degradation mode, was estimated for overpack of porcelain. A full-scale overpack of porcelain, of dimensions 800 mm outer diameter x 2200 mm length x 150 mm wall thickness, was fabricated under the ordinary level of fabrication technology. (author)

  9. Developments in MOX fuel pellet fabrication technology: Indian experience

    International Nuclear Information System (INIS)

    Kamath, H.S.; Majumdar, S.; Purusthotham, D.S.C.

    1998-01-01

    India is interested in mixed oxide (MOX) fuel technology for better utilisation of its nuclear fuel resources. In view of this, a programme involving MOX fuel design, fabrication and irradiation in research and power reactors has been taken up. A number of experimental irradiations in research reactors have been carried out and a few MOX assemblies of ''All Pu'' type have been loaded in our commercial BWRs at Tarapur. An island type of MOX fuel design is under study for use in PHWRs which can increase the burn-up of the fuel by more than 30% compared to natural UO 2 fuel. The MOX fuel pellet fabrication technology for the above purpose and R and D efforts in progress for achieving better fuel performance are described in the paper. The standard MOX fuel fabrication route involves mechanical mixing and milling of UO 2 and PuO 2 powders. After detailed investigations with several types of mixing and milling equipments, dry attritor milling has been found to be the most suitable for this operation. Neutron Coincident Counting (NCC) technique was found to be the most convenient and appropriate technique for quick analysis of Pu content in milled MOX powder and to know Pu mixing is homogenous or not. Both mechanical and hydraulic presses have been used for powder compaction for green pellet production although the latter has been preferred for better reproducibility. Low residue admixed lubricants have been used to facilitate easy compaction. The normal sintering temperature used in Nitrogen-Hydrogen atmosphere is between 1600 deg. C to 1700 deg. C. Low temperature sintering (LTS) using oxidative atmospheres such as carbon dioxide, Nitrogen and coarse vacuum have also been investigated on UO 2 and MOX on experimental scale and irradiation behaviour of such MOX pellets is under study. Ceramic fibre lined batch furnaces have been found to be the most suitable for MOX pellet production as they offer very good flexibility in sintering cycle, and ease of maintainability

  10. Identifying the hazard characteristics of powder byproducts generated from semiconductor fabrication processes.

    Science.gov (United States)

    Choi, Kwang-Min; An, Hee-Chul; Kim, Kwan-Sick

    2015-01-01

    Semiconductor manufacturing processes generate powder particles as byproducts which potentially could affect workers' health. The chemical composition, size, shape, and crystal structure of these powder particles were investigated by scanning electron microscopy equipped with an energy dispersive spectrometer, Fourier transform infrared spectrometry, and X-ray diffractometry. The powders generated in diffusion and chemical mechanical polishing processes were amorphous silica. The particles in the chemical vapor deposition (CVD) and etch processes were TiO(2) and Al(2)O(3), and Al(2)O(3) particles, respectively. As for metallization, WO(3), TiO(2), and Al(2)O(3) particles were generated from equipment used for tungsten and barrier metal (TiN) operations. In photolithography, the size and shape of the powder particles showed 1-10 μm and were of spherical shape. In addition, the powders generated from high-current and medium-current processes for ion implantation included arsenic (As), whereas the high-energy process did not include As. For all samples collected using a personal air sampler during preventive maintenance of process equipment, the mass concentrations of total airborne particles were particles less than 10 μm in diameter) using direct-reading aerosol monitor by area sampling were between 0.00 and 0.02 μg/m(3). Although the exposure concentration of airborne particles during preventive maintenance is extremely low, it is necessary to make continuous improvements to the process and work environment, because the influence of chronic low-level exposure cannot be excluded.

  11. Technology of combined chemical-mechanical fabrication of durable coatings

    Science.gov (United States)

    Smolentsev, V. P.; Ivanov, V. V.; Portnykh, A. I.

    2018-03-01

    The article presents the scientific fundamentals of methodology for calculating the modes and structuring the technological processes of combined chemical-mechanical fabrication of durable coatings. It is shown that they are based on classical patterns, describing the processes of simultaneous chemical and mechanical impact. The paper demonstrates the possibility of structuring a technological process, taking into account the systematic approach to impact management and strengthening the reciprocal positive influence of each impact upon the combined process. The combined processes have been planned for fabricating the model types of chemical-mechanical coatings of durable products in machine construction. The planning methodology is underpinned by a scientific hypothesis of a single source of impact management through energy potential of process components themselves, or by means of external energy supply through mechanical impact. The control of it is fairly thoroughly studied in the case of pulsed external strikes of hard pellets, similar to processes of vibroimpact hardening, thoroughly studied and mastered in many scientific schools of Russia.

  12. Development of semiconductor ΔE-E detector chip using standard bipolar IC technology

    International Nuclear Information System (INIS)

    Mishra, Vijay; Kataria, S.K.

    2005-01-01

    A proposal has been made for developing silicon based AE-E detector chip which can be used as particle identifiers in nuclear physics experiments and also in several applications in nuclear industry scenario. The proposed development work employs standard bipolar IC fabrication technology of Bharat Electronics Ltd. and the deliverable products that emerge out will be very cost effective. The present paper discusses the concept, feasibility studies and systematic plan for fabrication, characterization and packaging of the proposed detectors. (author)

  13. Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes.

    Science.gov (United States)

    Wang, Chuan; Ryu, Koungmin; Badmaev, Alexander; Zhang, Jialu; Zhou, Chongwu

    2011-02-22

    Complementary metal-oxide semiconductor (CMOS) operation is very desirable for logic circuit applications as it offers rail-to-rail swing, larger noise margin, and small static power consumption. However, it remains to be a challenging task for nanotube-based devices. Here in this paper, we report our progress on metal contact engineering for n-type nanotube transistors and CMOS integrated circuits using aligned carbon nanotubes. By using Pd as source/drain contacts for p-type transistors, small work function metal Gd as source/drain contacts for n-type transistors, and evaporated SiO(2) as a passivation layer, we have achieved n-type transistor, PN diode, and integrated CMOS inverter with an air-stable operation. Compared with other nanotube n-doping techniques, such as potassium doping, PEI doping, hydrazine doping, etc., using low work function metal contacts for n-type nanotube devices is not only air stable but also integrated circuit fabrication compatible. Moreover, our aligned nanotube platform for CMOS integrated circuits shows significant advantage over the previously reported individual nanotube platforms with respect to scalability and reproducibility and suggests a practical and realistic approach for nanotube-based CMOS integrated circuit applications.

  14. Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

    International Nuclear Information System (INIS)

    Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo

    2006-01-01

    Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

  15. Inertial Confinement Fusion Target Component Fabrication and Technology Development report

    International Nuclear Information System (INIS)

    Steinman, D.

    1994-03-01

    On December 30, 1990, the US Department of Energy entered into a contract with General Atomics (GA) to be the Inertial Confinement Fusion Target Component Fabrication and Technology Development Support contractor. This report documents the technical activities which took place under this contract during the period of October 1, 1992 through September 30, 1993. During this period, GA was assigned 18 tasks in support of the Inertial Confinement Fusion program and its laboratories. These tasks included ''Capabilities Activation'' and ''Capabilities Demonstration'' to enable us to begin production of glass and composite polymer capsules. Capsule delivery tasks included ''Small Glass Shell Deliveries'' and ''Composite Polymer Capsules'' for Lawrence Livermore National Laboratory (LLNL) and Los Alamos National Laboratory (LANL). We also were asked to provide direct ''Onsite Support'' at LLNL and LANL. We continued planning for the transfer of ''Micromachining Equipment from Rocky Flats'' and established ''Target Component Micromachining and Electroplating Facilities'' at GA. We fabricated over 1100 films and filters of 11 types for Sandia National Laboratory and provided full-time onsite engineering support for target fabrication and characterization. We initiated development of methods to make targets for the Naval Research Laboratory. We investigated spherical interferometry, built an automated capsule sorter, and developed an apparatus for calorimetric measurement of fuel fill for LLNL. We assisted LANL in the ''Characterization of Opaque b-Layered Targets.'' We developed deuterated and UV-opaque polymers for use by the University of Rochester's Laboratory for Laser Energetics (UR/LLE) and devised a triple-orifice droplet generator to demonstrate the controlled-mass nature of the microencapsulation process

  16. A Stretchable Electromagnetic Absorber Fabricated Using Screen Printing Technology.

    Science.gov (United States)

    Jeong, Heijun; Lim, Sungjoon

    2017-05-21

    A stretchable electromagnetic absorber fabricated using screen printing technology is proposed in this paper. We used a polydimethylsiloxane (PDMS) substrate to fabricate the stretchable absorber since PDMS exhibits good dielectric properties, flexibility, and restoring capabilities. DuPont PE872 (DuPont, Wilmington, CT, USA), a stretchable silver conductive ink, was used for the screen printing technique. The reflection coefficient of the absorber was measured using a vector network analyzer and a waveguide. The proposed absorber was designed as a rectangular patch unit cell, wherein the top of the unit cell acted as the patch and the bottom formed the ground. The size of the patch was 8 mm × 7 mm. The prototype of the absorber consisted of two unit cells such that it fits into the WR-90 waveguide (dimensions: 22.86 mm × 10.16 mm) for experimental measurement. Before stretching the absorber, the resonant frequency was 11 GHz. When stretched along the x -direction, the resonant frequency shifted by 0.1 GHz, from 11 to 10.9 GHz, demonstrating 99% absorption. Furthermore, when stretched along the y -direction, the resonant frequency shifted by 0.6 GHz, from 11 to 10.4 GHz, demonstrating 99% absorption.

  17. Fabricating binary optics: An overview of binary optics process technology

    Science.gov (United States)

    Stern, Margaret B.

    1993-01-01

    A review of binary optics processing technology is presented. Pattern replication techniques have been optimized to generate high-quality efficient microoptics in visible and infrared materials. High resolution optical photolithography and precision alignment is used to fabricate maximally efficient fused silica diffractive microlenses at lambda = 633 nm. The degradation in optical efficiency of four-phase-level fused silica microlenses resulting from an intentional 0.35 micron translational error has been systematically measured as a function of lens speed (F/2 - F/60). Novel processes necessary for high sag refractive IR microoptics arrays, including deep anisotropic Si-etching, planarization of deep topography and multilayer resist techniques, are described. Initial results are presented for monolithic integration of photonic and microoptic systems.

  18. Device fabrication, characterization, and thermal neutron detection response of LiZnP and LiZnAs semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Montag, Benjamin W., E-mail: bmontag@ksu.edu; Ugorowski, Philip B.; Nelson, Kyle A.; Edwards, Nathaniel S.; McGregor, Douglas S.

    2016-11-11

    Nowotny-Juza compounds continue to be explored as candidates for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled {sup 3}He and {sup 10}BF{sub 3} detectors. The {sup 6}Li(n,t){sup 4}He reaction yields a total Q-value of 4.78 MeV, larger than {sup 10}B, an energy easily identified above background radiations. Hence, devices fabricated from semiconductor compounds having either natural Li (nominally 7.5% {sup 6}Li) or enriched {sup 6}Li (usually 95% {sup 6}Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. Starting material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10{sup −6} Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace [1]. The raw synthesized material indicated the presence high impurity levels (material and electrical property characterizations). A static vacuum sublimation in quartz was performed to help purify the synthesized material [2,3]. Bulk crystalline samples were grown from the purified material [4,5]. Samples were cut using a diamond wire saw, and processed into devices. Bulk resistivity was determined from I–V curve measurements, ranging from 10{sup 6}–10{sup 11} Ω cm. Devices were characterized for sensitivity to 5.48 MeV alpha particles, 337 nm laser light, and neutron sensitivity in a thermal neutron diffracted beam at the Kansas State University TRIGA Mark II nuclear reactor. Thermal neutron reaction product charge induction was measured with a LiZnP device, and the reaction product spectral response was observed. - Highlights: • Devices were fabricated from in-house synthesized and purified LiZnAs and LiZnP. • Devices ranged in bulk resistivity from 10{sup 6}–10{sup 11} Ω cm. • Devices showed sensitivity to 5.48 MeV alpha particles. • Devices were characterized with a 337 nm laser light. • Devices were evaluated

  19. Device fabrication, characterization, and thermal neutron detection response of LiZnP and LiZnAs semiconductor devices

    Science.gov (United States)

    Montag, Benjamin W.; Ugorowski, Philip B.; Nelson, Kyle A.; Edwards, Nathaniel S.; McGregor, Douglas S.

    2016-11-01

    Nowotny-Juza compounds continue to be explored as candidates for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q-value of 4.78 MeV, larger than 10B, an energy easily identified above background radiations. Hence, devices fabricated from semiconductor compounds having either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. Starting material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace [1]. The raw synthesized material indicated the presence high impurity levels (material and electrical property characterizations). A static vacuum sublimation in quartz was performed to help purify the synthesized material [2,3]. Bulk crystalline samples were grown from the purified material [4,5]. Samples were cut using a diamond wire saw, and processed into devices. Bulk resistivity was determined from I-V curve measurements, ranging from 106-1011 Ω cm. Devices were characterized for sensitivity to 5.48 MeV alpha particles, 337 nm laser light, and neutron sensitivity in a thermal neutron diffracted beam at the Kansas State University TRIGA Mark II nuclear reactor. Thermal neutron reaction product charge induction was measured with a LiZnP device, and the reaction product spectral response was observed.

  20. Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

    Directory of Open Access Journals (Sweden)

    Cheng-Yang Lin

    2015-11-01

    Full Text Available The study investigates the design and fabrication of a micromachined radio frequency (RF capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

  1. Advanced high throughput MOX fuel fabrication technology and sustainable development

    International Nuclear Information System (INIS)

    Krellmann, Juergen

    2005-01-01

    The MELOX plant in the south of France together with the La Hague reprocessing plant, are part of the two industrial facilities in charge of closing the nuclear fuel cycle in France. Started up in 1995, MELOX has since accumulated a solid know-how in recycling plutonium recovered from spent uranium fuel into MOX: a fuel blend comprised of both uranium and plutonium oxides. Converting recovered Pu into a proliferation-resistant material that can readily be used to power a civil nuclear reactor, MOX fabrication offers a sustainable solution to safely take advantage of the plutonium's high energy content. Being the first large-capacity industrial facility dedicated to MOX fuel fabrication, MELOX distinguishes itself from the first generation MOX plants with high capacity (around 200 tHM versus around 40 tHM) and several unique operational features designed to improve productivity, reliability and flexibility while maintaining high safety standards. Providing an exemplary reference for high throughput MOX fabrication with 1,000 tHM produced since start-up, the unique process and technologies implemented at MELOX are currently inspiring other MOX plant construction projects (in Japan with the J-MOX plant, in the US and in Russia as part of the weapon-grade plutonium inventory reduction). Spurred by the growing international demand, MELOX has embarked upon an ambitious production development and diversification plan. Starting from an annual level of 100 tons of heavy metal (tHM), MELOX demonstrated production capacity is continuously increasing: MELOX is now aiming for a minimum of 140 tHM by the end of 2005, with the ultimate ambition of reaching the full capacity of the plant (around 200 tHM) in the near future. With regards to its activity, MELOX also remains deeply committed to sustainable development in a consolidated involvement within AREVA group. The French minister of Industry, on August 26th 2005, acknowledged the benefits of MOX fuel production at MELOX: 'In

  2. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  3. Developing Fabrication Technologies to Provide On Demand Manufacturing for Exploration of the Moon and Mars

    Science.gov (United States)

    Hammond, Monica S.; Good, James E.; Gilley, Scott D.; Howard, Richard W.

    2006-01-01

    NASA's human exploration initiative poses great opportunity and risk for manned and robotic missions to the Moon, Mars, and beyond. Engineers and scientists at the Marshall Space Flight Center (MSFC) are developing technologies for in situ fabrication capabilities during lunar and Martian surface operations utilizing provisioned and locally refined materials. Current fabrication technologies must be advanced to support the special demands and applications of the space exploration initiative such as power, weight and volume constraints. In Situ Fabrication and Repair (ISFR) will advance state-of-the-art technologies in support of habitat structure development, tools, and mechanical part fabrication. The repair and replacement of space mission components, such as life support items or crew exercise equipment, fall within the ISFR scope. This paper will address current fabrication technologies relative to meeting ISFR targeted capabilities, near-term advancement goals, and systematic evaluation of various fabrication methods.

  4. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for thin substrate polycrystalline solar cells (compound semiconductors and their fabrication technologies); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Usumaku taiyo denchi jitsuyoka no tame no kaiseki hyoka (kagobutsu taiyo denchi zairyo oyobi seisaku gijutsu no kaiseki hyoka)

    Energy Technology Data Exchange (ETDEWEB)

    Oyagi, H; Okada, Y; Yamaguchi, H; Shiota, T; Kuroda, S; Igarashi, O; Tanino, H; Makita, Y; Yamada, A; Kimura, S; Ohara, A; Niki, S; Shibata, H; Fons, P [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for analysis and evaluation for thin-film compound semiconductor solar cells. The study on epitaxial growth and optical properties of the thin films of CuInSe2 and CuGaSe2 evaluates the thin epitaxial films grown under various conditions, showing morphology of the defects at the interface of heteroepitaxial growth. These results are used to set the growth conditions under which a thin film of high luminescence by exciter recombination is produced. The study also gives information of luminescence transition in the vicinity of the band ends and of energy level between the bands. The study on structural analysis of the epitaxially grown thin films of CuInSe2 investigates dependence of lattice constants of the MBE-grown CIS layer on film thickness by the X-ray diffractometry based on the bond method. The study on epitaxial growth by the Se(CH3)2-halogen transfer method tests epitaxial growth of the single-crystalline Mo on a substrate of single-crystalline sapphire. 5 figs.

  5. Study on Bleaching Technology of Cotton Fabric with Sodium Percarbonate

    OpenAIRE

    Li Zhi; Wang Yanling; Wang Zhichao

    2016-01-01

    Bleach cotton fabric with sodium percarbonate solution. Analyse of the effect of the concentration of sodium percarbonate solution, bleaching time, bleaching temperature and the light radiation on the bleaching effect of fabric.The result shows that increasing concentrations of percarbonate,increasing the bleaching time , raising the bleaching temperature and the UV irradiation may whiten the cotton fabric.The most suitable conditions for the bleaching process is concentration of sodium perca...

  6. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James

    2017-01-02

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  7. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James; Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G.; McLachlan, Martyn A.; Anthopoulos, Thomas D.

    2017-01-01

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  8. 2nd International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects

    CERN Document Server

    Graul, Jürgen

    1971-01-01

    In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos­ sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power­ ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori­ ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume c...

  9. A Novel Semiconductor CIGS Photovoltaic Material and Thin-Film ED Technology

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In order to achieve low-cost high-efficiency thin-film solar cells, a novel Semiconductor Photovoltaic (PV) active material CuIn1-xGaxSe2 (CIGS) and thin-film Electro-Deposition (ED) technology is explored. Firstly,the PV materials and technologies is investigated, then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported. These results shows that high quality CIGS polycrystalline thin-films can be obtained by the ED method, in which the polycrystalline CIGS is definitely identified by the (112), (204, 220) characteristic peaks of the tetragonal structure, the continuous CIGS thin-film layers with particle average size of about 2μm of length and around 1.6μm of thickness. The thickness and solargrade quality of CIGS thin-films can be produced with good repeatability. Discussion and analysis on the ED technique, CIGS energy band and sodium (Na) impurity properties, were also performed. The alloy CIGS exhibits not only increasing band-gap with increasing x, but also a change in material properties that is relevant to the device operation. The beneficial impurity Na originating from the low-cost soda-lime glass substrate becomes one prerequisite for high quality CIGS films. These novel material and technology are very useful for low-cost high-efficiency thin-film solar cells and other devices.

  10. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  11. Laser printed organic semiconductor PQT-12 for bottom-gate organic thin-film transistors: Fabrication and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Makrygianni, M. [National Technical University of Athens, Physics Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); National Technical University of Athens, Electrical and Computer Engineering Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); Ainsebaa, A. [Ecole Nationale Supérieure des Mines de Saint-Etienne, Department of Flexible Electronics, CMP-EMSE, MOC, 13541 Gardanne (France); Nagel, M. [EMPA Swiss Federal Lab. for Materials Science and Technology, Laboratory for Functional Polymers, Überlandstrasse 129, 8600 Dubendorf (Switzerland); Sanaur, S. [Ecole Nationale Supérieure des Mines de Saint-Etienne, Department of Flexible Electronics, CMP-EMSE, MOC, 13541 Gardanne (France); Raptis, Y.S. [National Technical University of Athens, Physics Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); Zergioti, I., E-mail: zergioti@central.ntua.gr [National Technical University of Athens, Physics Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); Tsamakis, D. [National Technical University of Athens, Electrical and Computer Engineering Department, Iroon Polytehneiou 9, 15780 Zografou (Greece)

    2016-12-30

    Highlights: • Smooth printing of semiconducting π-conjugated polymer patterns for BG-BC OTFTs. • Well-ordering of PQT-12 when diluted in a high-boiling-point solvent yielding good interface properties. • No significant change in polymer chain orientation observed between LIFT printed patterns. • Reliable solid phase printing technique for thin, organic large area electronics applications, in a well-defined manner. - Abstract: In this work, we report on the effect of laser printed Poly (3,3‴-didodecyl quarter thiophene) on its optical, structural and electrical properties for bottom-gate/bottom-contact organic thin-film transistors applications. This semiconducting π-conjugated polymer was solution-deposited (spin-coated) on a donor substrate and transferred by means of solid phase laser-induced forward transfer (LIFT) technique on SiO{sub 2}/Si receiver substrates to form the active material. This article presents a detailed study of the electrical properties of the fabricated transistors by measuring the parasitic resistances for gold (Au) and platinum (Pt) as source-drain electrodes, for optimizing OTFTs in terms of contacts. In addition, X-ray diffraction patterns revealed that it is possible to control the polymer microstructure through the choice of solvent. Also, no significant change in polymer chain orientation was observed between two printed patterns at 90 and 130 mJ/cm{sup 2} as confirmed by Raman spectra. The results demonstrate hole mobility values of (2.6 ± 1.3) × 10{sup −2} cm{sup 2}/Vs, and lower parasitic resistance for dielectric surface roughness around 1.2 nm and Pt electrodes. Higher performances are correlated to i) the well-ordering of PQT-12 surface when a high-boiling-point solvent is used and ii) the less limitating Pt source/drain electrodes. This analytical study proves that solid phase LIFT printing is a reliable technology for the fabrication of thin, organic large area electronics in a well-defined manner.

  12. Laser printed organic semiconductor PQT-12 for bottom-gate organic thin-film transistors: Fabrication and characterization

    International Nuclear Information System (INIS)

    Makrygianni, M.; Ainsebaa, A.; Nagel, M.; Sanaur, S.; Raptis, Y.S.; Zergioti, I.; Tsamakis, D.

    2016-01-01

    Highlights: • Smooth printing of semiconducting π-conjugated polymer patterns for BG-BC OTFTs. • Well-ordering of PQT-12 when diluted in a high-boiling-point solvent yielding good interface properties. • No significant change in polymer chain orientation observed between LIFT printed patterns. • Reliable solid phase printing technique for thin, organic large area electronics applications, in a well-defined manner. - Abstract: In this work, we report on the effect of laser printed Poly (3,3‴-didodecyl quarter thiophene) on its optical, structural and electrical properties for bottom-gate/bottom-contact organic thin-film transistors applications. This semiconducting π-conjugated polymer was solution-deposited (spin-coated) on a donor substrate and transferred by means of solid phase laser-induced forward transfer (LIFT) technique on SiO_2/Si receiver substrates to form the active material. This article presents a detailed study of the electrical properties of the fabricated transistors by measuring the parasitic resistances for gold (Au) and platinum (Pt) as source-drain electrodes, for optimizing OTFTs in terms of contacts. In addition, X-ray diffraction patterns revealed that it is possible to control the polymer microstructure through the choice of solvent. Also, no significant change in polymer chain orientation was observed between two printed patterns at 90 and 130 mJ/cm"2 as confirmed by Raman spectra. The results demonstrate hole mobility values of (2.6 ± 1.3) × 10"−"2 cm"2/Vs, and lower parasitic resistance for dielectric surface roughness around 1.2 nm and Pt electrodes. Higher performances are correlated to i) the well-ordering of PQT-12 surface when a high-boiling-point solvent is used and ii) the less limitating Pt source/drain electrodes. This analytical study proves that solid phase LIFT printing is a reliable technology for the fabrication of thin, organic large area electronics in a well-defined manner.

  13. Technology development of fabrication NbTi and Nb3 Sn superconducting wires

    International Nuclear Information System (INIS)

    Rodrigues Junior, D.; Bormio, C.; Baldan, C.A.; Ramos, M.J.; Pinatti, D.G.

    1988-01-01

    The technology development of NbTi and Nb 3 Sn superconducting wires are studied, mentioning the use of fluxes capture theory in the sizing of wires fabrication. The fabrication process, the thermal treatment and the experimental datas of critical temperature and current of Nb 3 Sn wires are described. (C.G.C.) [pt

  14. Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

    Directory of Open Access Journals (Sweden)

    Seniutinas Gediminas

    2017-06-01

    Full Text Available The evolution of optical microscopy from an imaging technique into a tool for materials modification and fabrication is now being repeated with other characterization techniques, including scanning electron microscopy (SEM, focused ion beam (FIB milling/imaging, and atomic force microscopy (AFM. Fabrication and in situ imaging of materials undergoing a three-dimensional (3D nano-structuring within a 1−100 nm resolution window is required for future manufacturing of devices. This level of precision is critically in enabling the cross-over between different device platforms (e.g. from electronics to micro-/nano-fluidics and/or photonics within future devices that will be interfacing with biological and molecular systems in a 3D fashion. Prospective trends in electron, ion, and nano-tip based fabrication techniques are presented.

  15. Development of the fabrication technology of the simulated DUPIC fuel

    International Nuclear Information System (INIS)

    Kang, Kweon Ho; Yang, M. S.; Bae, K. K. and others

    2000-06-01

    It is important to get basic data to analysis physical properties, behavior in reactor and performance of the DUPIC fuel because physical properties of the DUPIC fuel is different from the commercial UO 2 fuel. But what directly measures physical properties et al. of DUPIC fuel being resinterred simulated spent fuel through OREOX process is very difficult in laboratory owing to its high level radiation. Then fabrication of simulated DUPIC fuel is needed to measure its properties. In this study, processes on powder treatment, OREOX, compaction and sintering to fabricate simulated DUPIC fuel using simulated spent fuel are discribed. To fabricate simulated DUPIC fuel, the powder from 3 times OREOX and 5 times attrition milling simulated spent fuel is compacted with 1.3 ton/cm 2 . Pellets are sintered in 100% H 2 atmosphere over 10 h at 1800 deg C. Sintered densities of pellets are 10.2-10.5 g/cm 3

  16. Coated fuel particles: requirements and status of fabrication technology

    International Nuclear Information System (INIS)

    Huschka, H.; Vygen, P.

    1977-01-01

    Fuel cycle, design, and irradiation performance requirements impose restraints on the fabrication processes. Both kernel and coating fabrication processes are flexible enough to adapt to the needs of the various existing and proposed high-temperature gas-cooled reactors. Extensive experience has demonstrated that fuel kernels with excellent sphericity and uniformity can be produced by wet chemical processes. Similarly experience has shown that the various multilayer coatings can be produced to fully meet design and specification requirements. Quality reliability of coated fuel particles is ensured by quality control and quality assurance programs operated by an aduiting system that includes licensing officials and the customer

  17. MOX fuel fabrication technology in J-MOX

    International Nuclear Information System (INIS)

    Osaka, Shuichi; Yoshida, Ryouichi; Yamazaki, Yukiko; Ikeda, Hiroyuki

    2014-01-01

    Japan Nuclear Fuel Ltd. (JNFL) has constructed JNFL MOX Fuel Fabrication Plant (J-MOX) since 2010. The MIMAS process has been introduced in the powder mixing process from AREVA NC considering a lot of MOX fuel fabrication experiences at MELOX plant in France. The feed material of Pu for J-MOX is MH-MOX powder from Rokkasho Reprocessing Plant (RRP) in Japan. The compatibility of the MH-MOX powder with the MIMAS process was positively evaluated and confirmed in our previous study. This paper describes the influences of the UO2 powder and the recycled scrap powder on the MOX pellet density. (author)

  18. Extremely Lightweight Segmented Membrane Optical Shell Fabrication Technology for Future IR to Optical Telescope, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose that the Membrane Optical Shell Technology (MOST) substrate fabrication approach be extended with a specific focus on advanced off-axis very light weight,...

  19. On-chip multi-wavelength laser sources fabricated using generic photonic integration technology

    NARCIS (Netherlands)

    Latkowski, S.; Williams, K.A.; Bente, E.A.J.M.

    Generic photonic integration technology platforms allow for design and fabrication of large complexity application specific photonic integrated circuits. Monolithic active-passive integration on indium phosphide substrate naturally enables a reliable co-integration of optical gain elements and

  20. Fabrication of silicon condenser microphones using single wafer technology

    NARCIS (Netherlands)

    Scheeper, P.R.; van der Donk, A.G.H.; Olthuis, Wouter; Bergveld, Piet

    1992-01-01

    A condenser microphone design that can be fabricated using the sacrificial layer technique is proposed and tested. The microphone backplate is a 1-¿m plasma-enhanced chemical-vapor-deposited (PECVD) silicon nitride film with a high density of acoustic holes (120-525 holes/mm2), covered with a thin

  1. The way to zeros: The future of semiconductor device and chemical mechanical polishing technologies

    Science.gov (United States)

    Tsujimura, Manabu

    2016-06-01

    For the last 60 years, the development of cutting-edge semiconductor devices has strongly emphasized scaling; the effort to scale down current CMOS devices may well achieve the target of 5 nm nodes by 2020. Planarization by chemical mechanical polishing (CMP), is one technology essential for supporting scaling. This paper summarizes the history of CMP transitions in the planarization process as well as the changing degree of planarity required, and, finally, introduces innovative technologies to meet the requirements. The use of CMP was triggered by the replacement of local oxidation of silicon (LOCOS) as the element isolation technology by shallow trench isolation (STI) in the 1980s. Then, CMP’s use expanded to improving embedability of aluminum wiring, tungsten (W) contacts, Cu wiring, and, more recently, to its adoption in high-k metal gate (HKMG) and FinFET (FF) processes. Initially, the required degree of planarity was 50 nm, but now 0 nm is required. Further, zero defects on a post-CMP wafer is now the goal, and it is possible that zero psi CMP loading pressure will be required going forward. Soon, it seems, everything will have to be “zero” and perfect. Although the process is also chemical in nature, the CMP process is actually mechanical with a load added using slurry particles several tens of nm in diameter. Zero load in the loading process, zero nm planarity with no trace of processing, and zero residual foreign material, including the very slurry particles used in the process, are all required. This article will provide an overview of how to achieve these new requirements and what technologies should be employed.

  2. Bioactive treatment promotes osteoblast differentiation on titanium materials fabricated by selective laser melting technology.

    Science.gov (United States)

    Tsukanaka, Masako; Fujibayashi, Shunsuke; Takemoto, Mitsuru; Matsushita, Tomiharu; Kokubo, Tadashi; Nakamura, Takashi; Sasaki, Kiyoyuki; Matsuda, Shuichi

    2016-01-01

    Selective laser melting (SLM) technology is useful for the fabrication of porous titanium implants with complex shapes and structures. The materials fabricated by SLM characteristically have a very rough surface (average surface roughness, Ra=24.58 µm). In this study, we evaluated morphologically and biochemically the specific effects of this very rough surface and the additional effects of a bioactive treatment on osteoblast proliferation and differentiation. Flat-rolled titanium materials (Ra=1.02 µm) were used as the controls. On the treated materials fabricated by SLM, we observed enhanced osteoblast differentiation compared with the flat-rolled materials and the untreated materials fabricated by SLM. No significant differences were observed between the flat-rolled materials and the untreated materials fabricated by SLM in their effects on osteoblast differentiation. We concluded that the very rough surface fabricated by SLM had to undergo a bioactive treatment to obtain a positive effect on osteoblast differentiation.

  3. Complete Dentures Fabricated with CAD/CAM Technology and a Traditional Clinical Recording Method.

    Science.gov (United States)

    Janeva, Nadica; Kovacevska, Gordana; Janev, Edvard

    2017-10-15

    The introduction of computer-aided design/computer-aided manufacturing (CAD/CAM) technology into complete denture (CD) fabrication ushered in a new era in removable prosthodontics. Commercially available CAD/CAM denture systems are expected to improve upon the disadvantages associated with conventional fabrication. The purpose of this report is to present the workflow involved in fabricating a CD with a traditional clinical recording method and CAD/CAM technology and to summarize the advantages to the dental practitioner and the patient.

  4. Fabrication of a First Article Lightweight Composite Technology Demonstrator - Exospine

    Science.gov (United States)

    2014-01-01

    core, (b) 0/90, and (c) ± 45 ply cuts of ACG-MTM 45-1/CF0526 prepreg fabric...Materials, University of Delaware (UD-CCM, Newark, DE) for providing the laminate design and materials used in this work. The authors would also like...onboard diagnostics. 2. Experimental 2.1 Materials Plain woven carbon fiber/epoxy prepreg and a low-density foam core were provided to ARL for the

  5. Fabricating Complete Dentures with CAD/CAM and RP Technologies.

    Science.gov (United States)

    Bilgin, Mehmet Selim; Erdem, Ali; Aglarci, Osman Sami; Dilber, Erhan

    2015-06-01

    Two techological approaches for fabricating dentures; computer-aided design and computer-aided manufacturing (CAD/CAM) and rapid prototyping (RP), are combined with the conventional techniques of impression and jaw relation recording to determine their feasibility and applicability. Maxillary and mandibular edentulous jaw models were produced using silicone molds. After obtaining a gypsum working model, acrylic bases were crafted, and occlusal rims for each model were fabricated with previously determined standard vertical and centric relationships. The maxillary and mandibular relationships were recorded with guides. The occlusal rims were then scanned with a digital scanner. The alignment of the maxillary and mandibular teeth was verified. The teeth in each arch were fabricated in one piece, or set, either by CAM or RP. Conventional waxing and flasking was then performed for both methods. These techniques obviate a practitioner's need for technicians during design and provide the patient with an opportunity to participate in esthetic design with the dentist. In addition, CAD/CAM and RP reduce chair time; however, the materials and techniques need further improvements. Both CAD/CAM and RP techniques seem promising for reducing chair time and allowing the patient to participate in esthetics design. Furthermore, the one-set aligned artificial tooth design may increase the acrylic's durability. © 2015 by the American College of Prosthodontists.

  6. Impact of fuel fabrication and fuel management technologies on uranium management

    International Nuclear Information System (INIS)

    Arnsberger, P.L.; Stucker, D.L.

    1994-01-01

    Uranium utilization in commercial pressurized water reactors is a complex function of original NSSS design, utility energy requirements, fuel assembly design, fuel fabrication materials and fuel fabrication materials and fuel management optimization. Fuel design and fabrication technologies have reacted to the resulting market forcing functions with a combination of design and material changes. The technologies employed have included ever-increasing fuel discharge burnup, non-parasitic structural materials, burnable absorbers, and fissile material core zoning schemes (both in the axial and radial direction). The result of these technological advances has improved uranium utilization by roughly sixty percent from the infancy days of nuclear power to present fuel management. Fuel management optimization technologies have also been developed in recent years which provide fuel utilization improvements due to core loading pattern optimization. This paper describes the development and impact of technology advances upon uranium utilization in modern pressurized water reactors. 10 refs., 3 tabs., 10 figs

  7. Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions

    International Nuclear Information System (INIS)

    McWilliams, B.M.; Herman, I.P.; Mitlitsky, F.; Hyde, R.A.; Wood, L.L.

    1983-01-01

    A complete set of processes sufficient for manufacture of n-metal-oxide-semiconductor (n-MOS) transistors by a laser-induced direct-write process has been demonstrated separately, and integrated to yield functional transistors. Gates and interconnects were fabricated of various combinations of n-doped and intrinsic polysilicon, tungsten, and tungsten silicide compounds. Both 0.1-μm and 1-μm-thick gate oxides were micromachined with and without etchant gas, and the exposed p-Si [100] substrate was cleaned and, at times, etched. Diffusion regions were doped by laser-induced pyrolytic decomposition of phosphine followed by laser annealing. Along with the successful manufacture of working n-MOS transistors and a set of elementary digital logic gates, this letter reports the successful use of several laser-induced surface reactions that have not been reported previously

  8. Improvement in semiconductor laser printing using a sacrificial protecting layer for organic thin-film transistors fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Rapp, Ludovic, E-mail: rapp@lp3.univ-mrs.fr [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Cibert, Christophe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nenon, Sebastien [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Alloncle, Anne Patricia [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nagel, Matthias [Empa, Swiss Federal Laboratories for Materials Testing and Reasearch, Laboratory for Functional Polymers, Uberlandstrasse 129, 8600 Duebendorf (Switzerland); Lippert, Thomas [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Videlot-Ackermann, Christine; Fages, Frederic [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Delaporte, Philippe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France)

    2011-04-01

    Laser-induced forward transfer (LIFT) has been used to deposit pixels of an organic semiconductor, distyryl-quaterthiophenes (DS4T). The dynamics of the process have been investigated by shadowgraphic imaging for the nanosecond (ns) and picosecond (ps) regime on a time-scale from the laser iradiation to 1.5 {mu}s. The morphology of the deposit has been studied for different conditions. Intermediate sacrificial layer of gold or triazene polymer has been used to trap the incident radiation. Its role is to protect the layer to be transferred from direct irradiation and to provide a mechanical impulse strong enough to eject the material.

  9. SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2009-12-01

    Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

  10. Nano-slit electrospray emitters fabricated by a micro- to nanofluidic via technology

    NARCIS (Netherlands)

    Dijkstra, Marcel; Berenschot, Johan W.; de Boer, Meint J.; van der Linden, H.J.; Hankemeier, T.; Lammerink, Theodorus S.J.; Wiegerink, Remco J.; Elwenspoek, Michael Curt; Tas, Niels Roelof

    2012-01-01

    This article presents nano-slit electrospray emitters fabricated by a micro- to nanofluidic via technology. The main advantage of the technology is the ability to position freely suspended nanochannels anywhere on a microfluidic chip, where leak-tight delivery of fluid from a fluid reservoir can be

  11. Development of technology on natural flaw fabrication and precise diagnosis for the major components in NPPs

    International Nuclear Information System (INIS)

    Han, Jung Ho; Choi, Myung Sik; Lee, Doek Hyun; Hur, Do Haeng

    2002-01-01

    The objective of this research is to develop a fabrication technology of natural flaw specimen of major components in NPPs and a technology of precise diagnosis for failure and degradation of components using natural flaw specimen. 1) Successful development of the natural flaw fabrication technology of SG tube 2) Evaluation of ECT signal and development of precise diagnosis using natural flaws. - Determination of length, depth, width, and multiplicity of fabricated natural flaws. - Informations about detectability and accuracy of ECT evaluation on various kinds of defects are collected when the combination of probe and frequency is changed. - An advanced technology for precise ECT evaluation is established. 3) Application of precise ECT diagnosis to failure analysis of SG tube in operation. - Fretting wear of KSNP SG. - ODSCC at tube expanded region of KSNP SG. - Determination of through/non-through wall of axial crack

  12. The European ITER Test Blanket Modules: Current status of fabrication technologies development and a way forward

    Energy Technology Data Exchange (ETDEWEB)

    Zmitko, Milan, E-mail: milan.zmitko@f4e.europa.eu [Fusion for Energy (F4E), Josep Pla 2, Barcelona (Spain); Galabert, Jose [Fusion for Energy (F4E), Josep Pla 2, Barcelona (Spain); Thomas, Noël [ATMOSTAT, F-94815 Villejuif (France); Forest, Laurent [CEA-Saclay, DEN, DM2S, SEMT, F-91191 Gif-sur-Yvette (France); Bucci, Philippe; Cogneau, Laurence [CEA-DRT, 38000 Grenoble (France); Rey, Jörg; Neuberger, Heiko [Karlsruhe Institute of Technology (KIT), Postfach 3640, Karlsruhe (Germany); Poitevin, Yves [Fusion for Energy (F4E), Josep Pla 2, Barcelona (Spain)

    2015-10-15

    Highlights: • Significant progress on development of welding procedures for European TBM achieved. • Fabrication processes feasibility based on diffusion and fusion welding demonstrated. • TBM box assembly welding scenarios investigated and welding scenarios identified. • Future qualification of pF/WPS proposed through realization of a number of QMUs. - Abstract: The paper reviews fabrication technologies and procedures applied for manufacturing of the TBM sub-components, like, HCLL and HCPB cooling plates, HCLL/HCPB stiffening plates, and HCLL/HCPB first wall and side caps. The used technologies are based on fusion and diffusion welding techniques taking into account specificities of the EUROFER-97 steel. Development of a standardized procedure complying with professional codes and standards (RCC-MRx), a preliminary fabrication/welding procedure specification (pF/WPS), is described as well as a fabrication and characterization of feasibility mock-ups (FMU) aimed at assessing the suitability of a fabrication process for fulfilling the design and fabrication specifications. Also, fabrication procedures for the TBM box assembly are presently under development through collaboration between European Fusion Laboratories and Industry for the establishment of an optimized assembly sequence/scenario and development of standardized welding procedure specifications. Selection of optimized assembly scenario takes into accounts not only the design requirements and fabrication possibilities/constraints but also maximum accessibility to the welds for sound non-destructive examination in compliance with welds classification. A future approach towards qualification of the developed fabrication technologies and procedures, through a number of medium to full-size qualification mock-ups according to European standards, is outlined before construction of the first TBMs.

  13. Investigation of SFQ integrated circuits using Nb fabrication technology

    International Nuclear Information System (INIS)

    Numata, H.; Tanaka, M.; Kitagawa, Y.; Tahara, S.

    1999-01-01

    In NEC's standard process, the minimum junction size is 2 μm and the critical current density (J C ) is 2.5 kA cm -2 . In the process, i-line stepper lithography and reactive ion etching with SF 6 gas are used and the standard deviation (σ) of the critical current (I C ) was 0.9% for the 2 μm junctions. This junction uniformity enables integration of more than 10M junctions if an I C variation of ±10% permits correct circuit operation. A 512-bit shift register was designed and fabricated by our standard process. Correct 512-bit delay operation was obtained. These results are promising for the large-scale integration of single flux quantum circuits. (author)

  14. Development of fabrication technology for low activation vanadium alloys as fusion blanket structural materials

    International Nuclear Information System (INIS)

    Nagasaka, T.; Muroga, T.; Fukumoto, K.; Watanabe, H.; Grossbeck, M.L.; Chen, J.M.

    2005-01-01

    High purity vanadium alloy products, such as plates, wires and tubes, were fabricated from reference high-purity V-4Cr-4Ti ingots designated as NIFS-HEAT, by using technologies applicable to industrial scale fabrication. Impurity behavior during breakdown, and its effect on mechanical properties were investigated. It was revealed that mechanical properties of the products were significantly improved by the control of Ti-C, N, O precipitation induced during the processes. (author)

  15. Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

    International Nuclear Information System (INIS)

    Takano, H.; Hosogi, K.; Kato, T.

    1995-01-01

    A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier with an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs

  16. Fabrication and characterization of 6,13-bis(triisopropylsilylethynyl)-pentacene active semiconductor thin films prepared by flow-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Mohamad, Khairul Anuar; Rusnan, Fara Naila; Seria, Dzulfahmi Mohd Husin; Saad, Ismail; Alias, Afishah [Nano Engineering & Materials (NEMs) Research Group, Faculty of Engineering Universiti Malaysia Sabah, Kota Kinabalu 88400 Sabah (Malaysia); Katsuhiro, Uesugi; Hisashi, Fukuda [Division of Engineering for Composite Functions, Muroran Institute of Technology 27-1 Mizumoto, Muroran 050-8585 Hokkaido (Japan)

    2015-08-28

    Investigation on the physical characterization and comparison of organic thin film based on a soluble 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene is reported. Oriented thin-films of pentacene have been successfully deposited by flow-coating method, in which the chloroform solution is sandwiched between a transparent substrate and a slide glass, followed by slow-drawing of the substrate with respect to the slide glass. Molecular orientation of flow-coated TIPS-pentacene is comparable to that of the thermal-evaporated pentacene thin film by the X-ray diffraction (XRD) results. XRD results showed that the morphology of flow-coated soluble pentacene is similar to that of the thermal-evaporated pentacene thin films in series of (00l) diffraction peaks where the (001) diffraction peaks are strongest in the nominally out-of-plane intensity and interplanar spacing located at approximately 2θ = 5.33° (d-spacing, d{sub 001} = 16 Å). Following that, ITO/p-TIPS-pentacene/n-ZnO/Au vertical diode was fabricated. The diode exhibited almost linear characteristics at low voltage with nonlinear characteristics at higher voltage which similar to a pn junction behavior. The results indicated that the TIPS-pentacene semiconductor active thin films can be used as a hole injection layer for fabrication of a vertical organic transistor.

  17. Fabrication of multianalyte CeO2 nanograin electrolyte–insulator–semiconductor biosensors by using CF4 plasma treatment

    Directory of Open Access Journals (Sweden)

    Chyuan Haur Kao

    2015-09-01

    Full Text Available Multianalyte CeO2 biosensors have been demonstrated to detect pH, glucose, and urine concentrations. To enhance the multianalyte sensing capability of these biosensors, CF4 plasma treatment was applied to create nanograin structures on the CeO2 membrane surface and thereby increase the contact surface area. Multiple material analyses indicated that crystallization or grainization caused by the incorporation of flourine atoms during plasma treatment might be related to the formation of the nanograins. Because of the changes in surface morphology and crystalline structures, the multianalyte sensing performance was considerably enhanced. Multianalyte CeO2 nanograin electrolyte–insulator–semiconductor biosensors exhibit potential for use in future biomedical sensing device applications. Keywords: Multianalyte biosensor, CeO2 nanograin, EIS, CF4 plasma treatment, Membrane surface

  18. An Overview of Current and Past W-UO[2] CERMET Fuel Fabrication Technology

    International Nuclear Information System (INIS)

    Douglas E. Burkes; Daniel M. Wachs; James E. Werner; Steven D. Howe

    2007-01-01

    Studies dating back to the late 1940s performed by a number of different organizations and laboratories have established the major advantages of Nuclear Thermal Propulsion (NTP) systems, particularly for manned missions. A number of NTP projects have been initiated since this time; none have had any sustained fuel development work that appreciably contributed to fuel fabrication or performance data from this era. As interest in these missions returns and previous space nuclear power researchers begin to retire, fuel fabrication technologies must be revisited, so that established technologies can be transferred to young researchers seamlessly and updated, more advanced processes can be employed to develop successful NTP fuels. CERMET fuels, specifically W-UO2, are of particular interest to the next generation NTP plans since these fuels have shown significant advantages over other fuel types, such as relatively high burnup, no significant failures under severe transient conditions, capability of accommodating a large fission product inventory during irradiation and compatibility with flowing hot hydrogen. Examples of previous fabrication routes involved with CERMET fuels include hot isostatic pressing (HIPing) and press and sinter, whereas newer technologies, such as spark plasma sintering, combustion synthesis and microsphere fabrication might be well suited to produce high quality, effective fuel elements. These advanced technologies may address common issues with CERMET fuels, such as grain growth, ductile to brittle transition temperature and UO2 stoichiometry, more effectively than the commonly accepted 'traditional' fabrication routes. Bonding of fuel elements, especially if the fabrication process demands production of smaller element segments, must be investigated. Advanced brazing techniques and compounds are now available that could produce a higher quality bond segment with increased ease in joining. This paper will briefly address the history of CERMET

  19. Junction and circuit fabrication

    International Nuclear Information System (INIS)

    Jackel, L.D.

    1980-01-01

    Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

  20. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  1. Development of CANDU high-burnup fuel fabrication technology

    International Nuclear Information System (INIS)

    Sim, Ki Seob; Suk, H. C.; Kwon, H. I.; Ji, C. G.; Cho, M. S.; Chang, H. I.

    1997-07-01

    This study is focused on the achievement of the fabrication process improvement of CANFLEX-NU and for this purpose, following two areas of basic research were executed this year. 1) development of amorphous alloy for use in brazing of nuclear materials. 2) development of ECT techniques for the end-cap weld inspection. Also, preliminary feasibility analyses on the characteristics and handling techniques of CANFLEX-RU fuel were executed this year. - Selection of optimum conversion process of RU power -Characterization of the composition of RU power - Radiological characterization of RU power and sintered pellets - Compaction and sintering characteristics of RU power - Required special process for the production of CANFLEX-RU fuel - Development of technical specification for RU powder and pellets. In addition, technical support activities were performed for in-pile and out-pile fuel performance tests such as precision measurement of out-pile test fuel dimensions, establishment of quality control technique on fuel bundle by providing bundle kits to AECL for use in-pile irradiation tests in the NRU research reactor. (author). 57 refs., 16 tabs.,40 figs

  2. Induction plasma deposition technology for nuclear fuel fabrication

    International Nuclear Information System (INIS)

    Jung, I. H.; Bae, K. K.; Lee, J. W.; Kim, T. K.; Yang, M. S.

    1998-01-01

    A study on induction plasma deposition with ceramic materials, yttria-stabilized-zirconia ZrO 2 -Y 2 O 3 (m.p. 2640 degree C), was conducted with a view of developing a new method for nuclear fuel fabrication. Before making dense pellets of more than 96%T.D., the spraying condition was optimized through the process parameters, such as chamber pressure, plasma plate power, powder spraying distance, sheath gas composition, probe position, particle size and powders of different morphology. The results with a 5mm thick deposit on rectangular planar graphite substrates showed a 97.11% theoretical density when the sheath gas flow rate was Ar/H 2 120/20 l/min, probe position 8cm, particle size -75 μm and spraying distance 22cm by AMDRY146 powder. The degree of influence of the main effects on density were powder morphology, particle size, sheath gas composition, plate power and spraying distance, in that order. Among the two parameter interactions, the sheath gas composition and chamber pressure affects density greatly. By using the multi-pellets mold of wheel type, the pellet density did not exceed 94%T.D., owing to the spraying angle

  3. Frontiers in Planar Lightwave Circuit Technology Design, Simulation, and Fabrication

    CERN Document Server

    Janz, Siegfried; Tanev, Stoyan

    2005-01-01

    This book is the result of the NATO Advanced Research Workshop on Frontiers in Planar Lightwave Circuit Technology, which took place in Ottawa, Canada from September 21-25, 2004. Many of the world’s leading experts in integrated photonic design, theory and experiment were invited to give lectures in their fields of expertise, and participate in discussions on current research and applications, as well as the new directions planar lightwave circuit technology is evolving towards. The sum of their contributions to this book constitutes an excellent record of many key issues and scientific problems in planar lightwave circuit research at the time of writing. In this volume the reader will find detailed overviews of experimental and theoretical work in high index contrast waveguide systems, micro-optical resonators, nonlinear optics, and advanced optical simulation methods, as well as articles describing emerging applications of integrated optics for medical and biological applications.

  4. Environmental safety issues for semiconductors (research on scarce materials recycling)

    International Nuclear Information System (INIS)

    Izumi, Shigekazu

    2004-01-01

    In the 21st century, in the fabrication of various industrial parts, particularly, current and future electronics devices in the semiconductor industry, environmental safety issues should be carefully considered. We coined a new term, environmental safety issues for semiconductors, considering our semiconductor research and technology which include environmental and ecological factors. The main object of this analysis is to address the present situation of environmental safety problems in the semiconductor industry; some of which are: (1) the generation and use of hazardous toxic gases in the crystal growth procedure such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), (2) the generation of industrial toxic wastes in the semiconductor process and (3) scarce materials recycling from wastes in the MBE and MOCVD growth procedure

  5. The design, fabrication, and photocatalytic utility of nanostructured semiconductors: focus on TiO2-based nanostructures

    Science.gov (United States)

    Banerjee, Arghya Narayan

    2011-01-01

    Recent advances in basic fabrication techniques of TiO2-based nanomaterials such as nanoparticles, nanowires, nanoplatelets, and both physical- and solution-based techniques have been adopted by various research groups around the world. Our research focus has been mainly on various deposition parameters used for fabricating nanostructured materials, including TiO2-organic/inorganic nanocomposite materials. Technically, TiO2 shows relatively high reactivity under ultraviolet light, the energy of which exceeds the band gap of TiO2. The development of photocatalysts exhibiting high reactivity under visible light allows the main part of the solar spectrum to be used. Visible light-activated TiO2 could be prepared by doping or sensitizing. As far as doping of TiO2 is concerned, in obtaining tailored material with improved properties, metal and nonmetal doping has been performed in the context of improved photoactivity. Nonmetal doping seems to be more promising than metal doping. TiO2 represents an effective photocatalyst for water and air purification and for self-cleaning surfaces. Additionally, it can be used as an antibacterial agent because of its strong oxidation activity and superhydrophilicity. Therefore, applications of TiO2 in terms of photocatalytic activities are discussed here. The basic mechanisms of the photoactivities of TiO2 and nanostructures are considered alongside band structure engineering and surface modification in nanostructured TiO2 in the context of doping. The article reviews the basic structural, optical, and electrical properties of TiO2, followed by detailed fabrication techniques of 0-, 1-, and quasi-2-dimensional TiO2 nanomaterials. Applications and future directions of nanostructured TiO2 are considered in the context of various photoinduced phenomena such as hydrogen production, electricity generation via dye-sensitized solar cells, photokilling and self-cleaning effect, photo-oxidation of organic pollutant, wastewater management, and

  6. The design, fabrication, and photocatalytic utility of nanostructured semiconductors: focus on TiO2-based nanostructures

    Directory of Open Access Journals (Sweden)

    Arghya Narayan Banerjee

    2011-02-01

    Full Text Available Arghya Narayan BanerjeeSchool of Mechanical Engineering, Yeungnam University, Gyeongsan, South KoreaAbstract: Recent advances in basic fabrication techniques of TiO2-based nanomaterials such as nanoparticles, nanowires, nanoplatelets, and both physical- and solution-based techniques have been adopted by various research groups around the world. Our research focus has been mainly on various deposition parameters used for fabricating nanostructured materials, including TiO2-organic/inorganic nanocomposite materials. Technically, TiO2 shows relatively high reactivity under ultraviolet light, the energy of which exceeds the band gap of TiO2. The development of photocatalysts exhibiting high reactivity under visible light allows the main part of the solar spectrum to be used. Visible light-activated TiO2 could be prepared by doping or sensitizing. As far as doping of TiO2 is concerned, in obtaining tailored material with improved properties, metal and nonmetal doping has been performed in the context of improved photoactivity. Nonmetal doping seems to be more promising than metal doping. TiO2 represents an effective photocatalyst for water and air purification and for self-cleaning surfaces. Additionally, it can be used as an antibacterial agent because of its strong oxidation activity and superhydrophilicity. Therefore, applications of TiO2 in terms of photocatalytic activities are discussed here. The basic mechanisms of the photoactivities of TiO2 and nanostructures are considered alongside band structure engineering and surface modification in nanostructured TiO2 in the context of doping. The article reviews the basic structural, optical, and electrical properties of TiO2, followed by detailed fabrication techniques of 0-, 1-, and quasi-2-dimensional TiO2 nanomaterials. Applications and future directions of nanostructured TiO2 are considered in the context of various photoinduced phenomena such as hydrogen production, electricity generation via

  7. Micro-fabricated packed gas chromatography column based on laser etching technology.

    Science.gov (United States)

    Sun, J H; Guan, F Y; Zhu, X F; Ning, Z W; Ma, T J; Liu, J H; Deng, T

    2016-01-15

    In this work, a micro packed gas chromatograph column integrated with a micro heater was fabricated by using laser etching technology (LET) for analyzing environmental gases. LET is a powerful tool to etch deep well-shaped channels on the glass wafer, and it is the most effective way to increase depth of channels. The fabricated packed GC column with a length of over 1.6m, to our best knowledge, which is the longest so far. In addition, the fabricated column with a rectangular cross section of 1.2mm (depth) × 0.6mm (width) has a large aspect ratio of 2:1. The results show that the fabricated packed column had a large sample capacity, achieved a separation efficiency of about 5800 plates/m and eluted highly symmetrical Gaussian peaks. Copyright © 2015 Elsevier B.V. All rights reserved.

  8. Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

    Science.gov (United States)

    Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

    2016-05-01

    Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

  9. Density functional theory and beyond-opportunities for quantum methods in materials modeling semiconductor technology

    International Nuclear Information System (INIS)

    Shankar, Sadasivan; Simka, Harsono; Haverty, Michael

    2008-01-01

    In the semiconductor industry, the use of new materials has been increasing with the advent of nanotechnology. As critical dimensions decrease, and the number of materials increases, the interactions between heterogeneous materials themselves and processing increase in complexity. Traditionally, applications of ab initio techniques are confined to electronic structure and band gap calculations of bulk materials, which are then used in coarse-grained models such as mesoscopic and continuum models. Density functional theory is the most widely used ab initio technique that was successfully extended to several applications. This paper illustrates applications of density functional theory to semiconductor processes and proposes further opportunities for use of such techniques in process development

  10. Application of vacuum technology during nuclear fuel fabrication, inspection and characterization

    International Nuclear Information System (INIS)

    Majumdar, S.

    2003-01-01

    Full text: Vacuum technology plays very important role during various stages of fabrication, inspection and characterization of U, Pu based nuclear fuels. Controlled vacuum is needed for melting and casting of U, Pu based alloys, picture framing of the fuel meat for plate type fuel fabrication, carbothermic reduction for synthesis of (U-Pu) mixed carbide powder, dewaxing of green ceramic fuel pellets, degassing of sintered pellets and encapsulation of fuel pellets inside clad tube. Application of vacuum technology is also important during inspection and characterization of fuel materials and fuel pins by way of XRF and XRD analysis, Mass spectrometer Helium leak detection etc. A novel method of low temperature sintering of UO 2 developed at BARC using controlled vacuum as sintering atmosphere has undergone successful irradiation testing in Cirus. The paper will describe various fuel fabrication flow sheets highlighting the stages where vacuum applications are needed

  11. Fabrication of Ni-doped BiVO_4 semiconductors with enhanced visible-light photocatalytic performances for wastewater treatment

    International Nuclear Information System (INIS)

    Regmi, Chhabilal; Kshetri, Yuwaraj K.; Kim, Tae-Ho; Pandey, Ramesh Prasad; Ray, Schindra Kumar; Lee, Soo Wohn

    2017-01-01

    Highlights: • Synthesis of a Ni-doped BiVO_4 semiconductor photocatalyst with reduced band gap energy. • Ni-doped BiVO_4 provided efficient photocatalytic activity for ibuprofen degradation and E. coli and green tide deactivation. • DFT calculation and thermodynamic modeling to understand the underlying mechanism. - Abstract: A visible-light-driven Ni-doped BiVO_4 photocatalyst was synthesized using a microwave hydrothermal method. The nominal Ni doping amount of 1 wt% provided excellent photoactivity for a variety of water pollutants, such as ibuprofen (pharmaceutical), Escherichia coli (bacteria), and green tides (phytoplankton). Each Ni-doped BiVO_4 sample exhibits better performance than pure BiVO_4. The degradation of ibuprofen reaches 80% within 90 min, the deactivation of Escherichia coli reaches around 92% within 5 h, and the inactivation of green tide (Chlamydomonas pulsatilla) reaches 70% upon 60 min of the visible light irradiation. The first principle calculation and thermodynamic modeling revealed that Ni doping in the vanadium site gives the most stable configuration of the synthesized samples with the formation of an in-gap energy state and oxygen vacancies. The in-gap energy state and the oxygen vacancies serve as an electron-trapping center that decreases the migration time of the photogenerated carrier and increases the separation efficiency of electron-hole pairs, which are responsible for the observed efficient photocatalytic, anti-bacterial and anti-algal activity of the samples. These properties thus suggest potential applications of Ni-doped BiVO_4 as a multifunctional material in the field of wastewater treatment.

  12. Status of Research on Pebble Bed HTR Fuel Fabrication Technology in Indonesia

    International Nuclear Information System (INIS)

    Rachmawati, M.; Sarjono; Ridwan; Langenati, R.

    2014-01-01

    Research on pebble bed HTR fuel fabrication is conducted in Indonesia. One of the aims is to build a knowledge base on pebble bed HTR fuel element fabrication technology for fuel procurement. The steps of research strategies are firstly to understand the basic design research of TRISO fuel, properties, and requirements, and secondly to understand the TRISO fuel manufacturing technology, which comprises fabrication and quality control, including its facility. Both steps are adopted from research and experiences of the countries with HTR fuel element fabrication technology. From the knowledge gained in the research, an experimental design of the process and a set of prototype process equipment for fabrication are developed, namely kernels production using external gelation process, TRISO coating of the kernel, and pebble compacting. Experiments using the prototypes have been conducted. Characterization of the kernel product, i.e. diameter, sphericity, density and O/U ratio, shows that the kernel product is still not in compliance with the specification requirements. These are deemed to be caused mainly by the selected vibrating system and the viscosity adjustment. Another major cause is the selected NH3 and air feeding method for both NH3 and air layer in the preparation for spherical droplets of liquid. The FB-CVD TRISO coating of the kernel has been experimented but unsuccessful by using an FB-CVD once‐through continuous coating process. For the pebble compacting, the process is still in the early stage of setting-up compaction equipment. This paper summarizes the current status of research on HTR fuel fabrication technology in Indonesia, the proposed process and its equipment setting-up for improvement of the kernel production. The knowledge and lessons learned gained from the research is useful and can be an assistance in planning for fuel development laboratory facilities procurement, formulating User Requirement Document and Bid Invitation Specification for

  13. Development of hi-tech ceramics fabrication technology

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Suk; Park, Ji Yeon; Kim, Sun Jai; Hwan, Jung Choong; Oh, Seok Jin

    1997-07-01

    There are some ceramic materials being used in the nuclear energy such as nuclear fuel, coolant pump seals, tritium breeder materials, a high temperature absorber, and the solid electrolyte for recovering tritium. In addition, lots of researches recently have been conducted on the development of highly functional ceramics such as highly efficient shielding materials, functional graded materials and radioactive isotopes-separating materials. Therefore, one of the objectives of this project is to develop ultra-fine and pure powder manufacturing technology. Tritium breeder materials, LiAlO{sub 2}, Li{sub 2}ZrO{sub 3} and Li{sub 2}TiO{sub 3} were made with a combustion process of mixed fuels that is developed indigenously in this project. Additionally, this study also focused on the development of promising low temperature electrolytes of ceria. By using the ceria powder made by the combustion process of GNP was investigated their sinterability and the electrolytic characteristics. (author). 167 refs., 74 tabs., 91 figs

  14. Benefits of on-wafer calibration standards fabricated in membrane technology

    Science.gov (United States)

    Rohland, M.; Arz, U.; Büttgenbach, S.

    2011-07-01

    In this work we compare on-wafer calibration standards fabricated in membrane technology with standards built in conventional thin-film technology. We perform this comparison by investigating the propagation of uncertainties in the geometry and material properties to the broadband electrical properties of the standards. For coplanar waveguides used as line standards the analysis based on Monte Carlo simulations demonstrates an up to tenfold reduction in uncertainty depending on the electromagnetic waveguide property we look at.

  15. Fabrication technology and characteristics of AmO2-MgO cercer materials for transmutation

    International Nuclear Information System (INIS)

    Croixmarie, Y.; Mocellin, A.; Warin, D.

    2000-01-01

    This paper deals with the fabrication technology and the physico-chemical properties of target materials prepared for the ECRIX experiment in the French PHENIX reactor. The ECRIX target materials consist of pellets made of a ceramic-ceramic type composite in which particles of americium oxide are microdispersed in an inert matrix of magnesium oxide

  16. Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

    International Nuclear Information System (INIS)

    Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Rachevskaia, I.; Zen, M.; Zorzi, N.

    2001-01-01

    We report on the development of a fabrication technology for double-sided, AC-coupled silicon microstrip detectors for tracking applications. Two batches of detectors with good electrical figures and a low defect rate were successfully manufactured at IRST Laboratory. The processing techniques and the experimental results obtained from these detector prototypes are presented and discussed

  17. Integrated optical serializer designed and fabricated in a generic InP based technology

    NARCIS (Netherlands)

    Stopinski, S.T.; Malinowski, M.; Piramidowicz, R.; Smit, M.K.; Leijtens, X.J.M.

    2012-01-01

    This work presents design and characterization results of an optical pulse serializer, realized as an Application Specific Photonic Integrated Circuit (ASPIC) in a novel, generic InPbased technology and fabricated in a multi-project wafer run. The measurement results show high-speed (32 Gbit/s)

  18. High energy density capacitors fabricated by thin film technology

    International Nuclear Information System (INIS)

    Barbee, T W; Johnson, G W; Wagner, A V.

    1999-01-01

    Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

  19. The Semiconductor Industry and Emerging Technologies: A Study Using a Modified Delphi Method

    Science.gov (United States)

    Jordan, Edgar A.

    2010-01-01

    The purpose of this qualitative descriptive study was to determine what leaders in the semiconductor industry thought the future of computing would look like and what emerging materials showed the most promise to overcome the current theoretical limit of 10 nanometers for silicon dioxide. The researcher used a modified Delphi technique in two…

  20. Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Qing-Wen, Song; Xiao-Yan, Tang; Yan-Jing, He; Guan-Nan, Tang; Yue-Hu, Wang; Yi-Meng, Zhang; Hui, Guo; Ren-Xu, Jia; Hong-Liang, Lv; Yi-Men, Zhang; Yu-Ming, Zhang

    2016-03-01

    In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich- (nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO2 were examined by the measurement of HF I-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2 × 1011 eV-1·cm-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm2·V-1·s-1, and the maximum peak field-effect mobility of 38 cm2·V-1·s-1 was achieved in fabricated lateral 4H-SiC MOSFFETs. Projcet supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

  1. Proceedings of the Malaysian Science and Technology Congress `94: Vol. II - new products and processes

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-12-31

    New processes and products in the field of the Malaysian technology research were presented at the Science and Technology congress `94. Composite materials, semiconductors fabrication, optical fibers, zeolite properties etc. were discussed in 35 contributions.

  2. Proceedings of the Malaysian Science and Technology Congress '94: Vol. II - new products and processes

    International Nuclear Information System (INIS)

    1994-01-01

    New processes and products in the field of the Malaysian technology research were presented at the Science and Technology congress '94. Composite materials, semiconductors fabrication, optical fibers, zeolite properties etc. were discussed in 35 contributions

  3. The European ITER test blanket modules: Progress in development of fabrication technologies towards standardization

    Energy Technology Data Exchange (ETDEWEB)

    Zmitko, Milan, E-mail: milan.zmitko@f4e.europa.eu [Fusion for Energy (F4E), Josep Pla 2, Barcelona (Spain); Thomas, Noël [ATMOSTAT, F-94815 Villejuif (France); LiPuma, Antonella; Forest, Laurent [CEA-Saclay, DEN, DM2S, SEMT, F-91191 Gif-sur-Yvette (France); Cogneau, Laurence [CEA-DRT, 38000 Grenoble (France); Rey, Jörg; Neuberger, Heiko [Karlsruhe Institute of Technology (KIT), Postfach 3640, Karlsruhe (Germany); Poitevin, Yves [Fusion for Energy (F4E), Josep Pla 2, Barcelona (Spain)

    2016-11-01

    Highlights: • Significant progress on the development of welding procedures for European TBM achieved. • Fabrication processes feasibility based on diffusion and fusion welding demonstrated. • An optimized welding scenario/sequence for TBM box assembly identified. • Future qualification of pF/WPS proposed through realization of a number of QMUs. - Abstract: The paper reviews progress achieved in development of fabrication technologies and procedures applied for manufacturing of the TBM sub-components, like, HCLL and HCPB cooling plates, HCLL/HCPB stiffening plates, and HCLL/HCPB first wall and side caps. The used technologies are based on fusion and diffusion welding techniques taking into account specificities of the EUROFER97 steel. Development of a standardized procedure complying with professional codes and standards (RCC-MRx), a preliminary fabrication/welding procedure specification (pF/WPS), is described based on fabrication and non-destructive and destructive characterization of feasibility mock-ups (FMU) aimed at assessing the suitability of a fabrication process for fulfilling the design and fabrication specifications. The main FMUs characterization results are reported (e.g. pressure resistance and helium leak tightness tests, mechanical properties and microstructure at the weld joints, geometrical characteristics of the sub-components and internal cooling channels) and the key pF/WPS steps and parameters are outlined. Also, fabrication procedures for the TBM box assembly are presently under development for the establishment of an optimized assembly sequence/scenario and development of standardized welding procedure specifications. In conclusions, further steps towards the pF/WPS qualification are briefly discussed.

  4. Current developments of fuel fabrication technologies at the plutonium fuel production facility, PFPF

    International Nuclear Information System (INIS)

    Asakura, K.; Aono, S.; Yamaguchi, T.; Deguchi, M.

    2000-01-01

    The Japan Nuclear Cycle Development Institute, JNC, designed, constructed and has operated the Plutonium Fuel Production Facility, PFPF, at the JNC Tokai Works to supply MOX fuels to the proto-type Fast Breeder Reactor, FBR, 'MONJU' and the experimental FBR 'JOYO' with 5 tonMOX/year of fabrication capability. Reduction of personal radiation exposure to a large amount of plutonium is one of the most important subjects in the development of MOX fabrication facility on a large scale. As the solution of this issue, the PFPF has introduced automated and/or remote controlled equipment in conjunction with computer controlled operation scheme. The PFPF started its operation in 1988 with JOYO reload fuel fabrication and has demonstrated MOX fuel fabrication on a large scale through JOYO and MONJU fuel fabrication for this decade. Through these operations, it has become obvious that several numbers of equipment initially installed in the PFPF need improvements in their performance and maintenance for commercial utilization of plutonium in the future. Furthermore, fuel fabrication of low density MOX pellets adopted in the MONJU fuel required a complete inspection because of difficulties in pellet fabrication compared with high density pellet for JOYO. This paper describes new pressing equipment with a powder recovery system, and pellet finishing and inspection equipment which has multiple functions, such as grinding measurements of outer diameter and density, and inspection of appearance to improve efficiency in the pellet finishing and inspection steps. Another development of technology concerning an annular pellet and an innovative process for MOX fuel fabrication are also described in this paper. (author)

  5. Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer.

    Science.gov (United States)

    Jung, Soon-Won; Choi, Jeong-Seon; Park, Jung Ho; Koo, Jae Bon; Park, Chan Woo; Na, Bock Soon; Oh, Ji-Young; Lim, Sang Chul; Lee, Sang Seok; Chu, Hye Yong

    2016-03-01

    We demonstrate flexible organic/inorganic hybrid thin-film transistors (TFTs) on a polydimethysilox- ane (PDMS) elastomer substrate. The active channel and gate insulator of the hybrid TFT are composed of In-Ga-Zn-O (IGZO) and blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF- TrFE)] with poly(methyl methacrylate) (PMMA), respectively. It has been confirmed that the fabri- cated TFT display excellent characteristics: the recorded field-effect mobility, sub-threshold voltage swing, and I(on)/I(off) ratio were approximately 0.35 cm2 V(-1) s(-1), 1.5 V/decade, and 10(4), respectively. These characteristics did not experience any degradation at a bending radius of 15 mm. These results correspond to the first demonstration of a hybrid-type TFT using an organic gate insulator/oxide semiconducting active channel structure fabricated on PDMS elastomer, and demonstrate the feasibility of a promising device in a flexible electronic system.

  6. Inkjet printing for biosensor fabrication: combining chemistry and technology for advanced manufacturing.

    Science.gov (United States)

    Li, Jia; Rossignol, Fabrice; Macdonald, Joanne

    2015-06-21

    Inkjet printing is emerging at the forefront of biosensor fabrication technologies. Parallel advances in both ink chemistry and printers have led to a biosensor manufacturing approach that is simple, rapid, flexible, high resolution, low cost, efficient for mass production, and extends the capabilities of devices beyond other manufacturing technologies. Here we review for the first time the factors behind successful inkjet biosensor fabrication, including printers, inks, patterning methods, and matrix types. We discuss technical considerations that are important when moving beyond theoretical knowledge to practical implementation. We also highlight significant advances in biosensor functionality that have been realised through inkjet printing. Finally, we consider future possibilities for biosensors enabled by this novel combination of chemistry and technology.

  7. Large core plastic planar optical splitter fabricated by 3D printing technology

    Science.gov (United States)

    Prajzler, Václav; Kulha, Pavel; Knietel, Marian; Enser, Herbert

    2017-10-01

    We report on the design, fabrication and optical properties of large core multimode optical polymer splitter fabricated using fill up core polymer in substrate that was made by 3D printing technology. The splitter was designed by the beam propagation method intended for assembling large core waveguide fibers with 735 μm diameter. Waveguide core layers were made of optically clear liquid adhesive, and Veroclear polymer was used as substrate and cover layers. Measurement of optical losses proved that the insertion optical loss was lower than 6.8 dB in the visible spectrum.

  8. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  9. A review on the development of the advanced fuel fabrication technology

    International Nuclear Information System (INIS)

    Lee, Jung Won; Lee, Yung Woo; Sohn, Dong Sung; Yang, Myung Seung; Bae, Kee Kwang; Nah, Sang Hoh; Kim, Han Soo; Kim, Bong Koo; Song, Keun Woo; Kim, See Hyung

    1995-07-01

    In this state-of art report, the development status of the advanced nuclear fuel was investigated. The current fabrication technology for coated particle fuel and non-oxide fuel such as sol-gel technology, coating technology, and carbothermic reduction reaction has also been examined. In the view point of inherent safety and efficiency in the operation of power plant, the coated particle fuel will keep going on its reputation as nuclear fuel for a high temperature gas cooled reactor, and the nitride fuel is very prospective for the next liquid metal fast breeder reactor. 43 figs., 17 tabs., 96 refs. (Author)

  10. A review on the development of the advanced fuel fabrication technology

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jung Won; Lee, Yung Woo; Sohn, Dong Sung; Yang, Myung Seung; Bae, Kee Kwang; Nah, Sang Hoh; Kim, Han Soo; Kim, Bong Koo; Song, Keun Woo; Kim, See Hyung [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1995-07-01

    In this state-of art report, the development status of the advanced nuclear fuel was investigated. The current fabrication technology for coated particle fuel and non-oxide fuel such as sol-gel technology, coating technology, and carbothermic reduction reaction has also been examined. In the view point of inherent safety and efficiency in the operation of power plant, the coated particle fuel will keep going on its reputation as nuclear fuel for a high temperature gas cooled reactor, and the nitride fuel is very prospective for the next liquid metal fast breeder reactor. 43 figs., 17 tabs., 96 refs. (Author).

  11. Development of challengeable reprocessing and fuel fabrication technologies for advanced fast reactor fuel cycle

    International Nuclear Information System (INIS)

    Nomura, S.; Aoshima, T.; Myochin, M.

    2001-01-01

    R and D in the next five years in Feasibility Study Phase-2 are focused on selected key technologies for the advanced fuel cycle. These are the reference technology of simplified aqueous extraction and fuel pellet short process based on the oxide fuel and the innovative technology of oxide-electrowinning and metal- electrorefining process and their direct particle/metal fuel fabrication methods in a hot cell. Automatic and remote handling system operation in both reprocessing and fuel manufacturing can handle MA and LLFP concurrently with Pu and U attaining the highest recovery and an accurate accountability of these materials. (author)

  12. Solar energy harvesting by magnetic-semiconductor nanoheterostructure in water treatment technology.

    Science.gov (United States)

    Mahmoodi, Vahid; Bastami, Tahereh Rohani; Ahmadpour, Ali

    2018-03-01

    Photocatalytic degradation of toxic organic pollutants in the wastewater using dispersed semiconductor nanophotocatalysts has a number of advantages such as high activity, cost effectiveness, and utilization of free solar energy. However, it is difficult to recover and recycle nanophotocatalysts since the fine dispersed nanoparticles are easily suspended in waters. Furthermore, a large amount of photocatalysts will lead to color contamination. Thus, it is necessary to prepare photocatalysts with easy separation for the reusable application. To take advantage of high photocatalysis activity and reusability, magnetic photocatalysts with separation function were utilized. In this review, the photocatalytic principle, structure, and application of the magnetic-semiconductor nanoheterostructure photocatalysts under solar light are evaluated. Graphical abstract ᅟ.

  13. Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors.

    Science.gov (United States)

    Lee, Su Jin; Kim, Yong-Jae; Yeo, So Young; Lee, Eunji; Lim, Ho Sun; Kim, Min; Song, Yong-Won; Cho, Jinhan; Lim, Jung Ah

    2015-09-11

    Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step.

  14. Development of Hi-Tech ceramics fabrication technologies - Development of advanced nuclear materials

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Thae Kap; Park, Ji Youn; Kim, Sun Jae; Kim, Kyong Ho; Jung, Choong Hwan; Oh, Seok Jin [Korea Atomic Energy Res. Inst., Taejon (Korea, Republic of)

    1994-07-15

    The objective of the present work is to prepare the foundation of hi-tech ceramics fabrication technologies through developing important processes i.e., tape casting, sol-gel, single crystal growing, compacting and sintering, and grinding and machining processes. Tape casting process is essential to manufacture hard and functional thin plates and structural elements for some composite materials. For the fabrication of spherical mono-sized micropowders of oxides, sol-gel process has widely been used. Piezoelectric elements that are the core parts of the sensors of LPMS (loose part monitoring system) and ALMS (acoustic leakage monitoring system) are used in single crystal forms. Compacting and sintering processes are general methods for fabricating structural parts using powders. Grinding and machining processes are important to achieve the final dimensions and surface properties of the parts. (Author).

  15. From Lunar Regolith to Fabricated Parts: Technology Developments and the Utilization of Moon Dirt

    Science.gov (United States)

    McLemore, C. A.; Fikes, J. C.; McCarley, K. S.; Good, J. E.; Gilley, S. D.; Kennedy, J. P.

    2008-01-01

    The U.S. Space Exploration Policy has as a cornerstone the establishment of an outpost on the moon. This lunar outpost wil1 eventually provide the necessary planning, technology development, testbed, and training for manned missions in the future beyond the Moon. As part of the overall activity, the National Aeronautics and Space Administration (NASA) is investigating how the in situ resources can be utilized to improve mission success by reducing up-mass, improving safety, reducing risk, and bringing down costs for the overall mission. Marshall Space Flight Center (MSFC), along with other NASA centers, is supporting this endeavor by exploring how lunar regolith can be mined for uses such as construction, life support, propulsion, power, and fabrication. An infrastructure capable of fabrication and nondestructive evaluation will be needed to support habitat structure development and maintenance, tools and mechanical parts fabrication, as well as repair and replacement of space-mission hardware such as life-support items, vehicle components, and crew systems, This infrastructure will utilize the technologies being developed under the In Situ Fabrication and Repair (ISFR) element, which is working in conjunction with the technologies being developed under the In Situ Resources Utilization (ISRU) element, to live off the land. The ISFR Element supports the Space Exploration Initiative by reducing downtime due to failed components; decreasing risk to crew by recovering quickly from degraded operation of equipment; improving system functionality with advanced geometry capabilities; and enhancing mission safety by reducing assembly part counts of original designs where possible. This paper addresses the need and plan for understanding the properties of the lunar regolith to determine the applicability of using this material in a fabrication process. This effort includes the development of high fidelity simulants that will be used in fabrication processes on the ground to

  16. Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

    Science.gov (United States)

    Chen, Tai-Chou Papo

    The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

  17. Fabrication Technologies of the High Gradient Accelerator Structures at 100MV/m Range

    CERN Document Server

    Wang, Juwen; Van Pelt, John; Yoneda, Charles; Gudkov, D; Riddone, Germana; Higo, Toshiyasu; Takatomi, Toshikazu

    2010-01-01

    A CERN-SLAC-KEK collaboration on high gradient X-band structure research has been established in order to demonstrate the feasibility of the CLIC baseline design for the main linac stably operating at more than 100 MV/m loaded accelerating gradient. Several prototype CLIC structures were successfully fabricated and high power tested. They operated at 105 MV/m with a breakdown rate that meets the CLIC linear collider specifications of <5×10-7/pulse/m. This paper summarizes the fabrication technologies including the mechanical design, precision machining, chemical cleaning, diffusion bonding as well as vacuum baking and all related assembly technologies. Also, the tolerances control, tuning and RF characterization will be discussed

  18. Design consideration for dc SQUIDs fabricated in deep sub-micron technology

    International Nuclear Information System (INIS)

    Ketchen, M.B.

    1991-01-01

    Design rules for scaling dc SQUID junctions to optimize SQUID performance have been well known for over a decade, and verified down to the sub-micron regime. Practical SQUIDs having well coupled input coils of usable inductance have generally been fabricated at the 2-5 μm level of lithography. Other technologies, silicon in particular, are now routinely practiced at the 0.5 μm level of lithography with impressive demonstrations at the 0.1-0.25 μm level not uncommon. In this paper the implications of applying such fabrication capability to advance dc SQUID technology are explored. In particular the issues of scaling practical dc SQUIDs down to the 0.1-0.25 μm regime are examined, using as a prototype design the basic washer SQUID with a spiral input coil

  19. Report on surveys in fiscal 2000 on the workshop on semiconductor technology for 21st century; 2000 nendo 21 seiki wo hiraku handotai gijutsu workshop chosa hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-08-01

    A workshop was held in order to realize the high-level information society, and bring about the common recognition on the assignments in the directionality to go in the next five years and on the problems to be worked on with emphasis in semiconductor technologies to form the foundation thereof, standing on the viewpoint of about ten years ahead. The matters discussed in the major semiconductor technology field included promotion of development of functions and technologies sought in the next generation system LSI, CAD system technologies, assurance of design engineers, development of new devices corresponding to electric power saving requirement, promotion of high integration elementary technologies, innovation in memory elementary technologies and structuring of new devices, new materials and processes for SoC, establishment of the membrane technology to insulate low-k layers, necessity of coordination from the basics to the applied fields, development of lithography and measuring technologies of sub-100 nm, and post photo-lithography technologies, promotion of micro measurement and macro measurement technologies, requirements in high-profit type semiconductor production technologies, and structuring of production factories with high QTAT and flexibility. (NEDO)

  20. Hydrophobic and superhydrophobic surfaces fabricated using atmospheric pressure cold plasma technology: A review.

    Science.gov (United States)

    Dimitrakellis, Panagiotis; Gogolides, Evangelos

    2018-04-01

    Hydrophobic surfaces are often used to reduce wetting of surfaces by water. In particular, superhydrophobic surfaces are highly desired for several applications due to their exceptional properties such as self-cleaning, anti-icing, anti-friction and others. Such surfaces can be prepared via numerous methods including plasma technology, a dry technique with low environmental impact. Atmospheric pressure plasma (APP) has recently attracted significant attention as lower-cost alternative to low-pressure plasmas, and as a candidate for continuous rather than batch processing. Although there are many reviews on water-repellent surfaces, and a few reviews on APP technology, there are hardly any review works on APP processing for hydrophobic and superhydrohobic surface fabrication, a topic of high importance in nanotechnology and interface science. Herein, we critically review the advances on hydrophobic and superhydrophobic surface fabrication using APP technology, trying also to give some perspectives in the field. After a short introduction to superhydrophobicity of nanostructured surfaces and to APPs we focus this review on three different aspects: (1) The atmospheric plasma reactor technology used for fabrication of (super)hydrophobic surfaces. (2) The APP process for hydrophobic surface preparation. The hydrophobic surface preparation processes are categorized methodologically as: a) activation, b) grafting, c) polymerization, d) roughening and hydrophobization. Each category includes subcategories related to different precursors used. (3) One of the most important sections of this review concerns superhydrophobic surfaces fabricated using APP. These are methodologically characterized as follows: a) single step processes where micro-nano textured topography and low surface energy coating are created at the same time, or b) multiple step processes, where these steps occur sequentially in or out of the plasma. We end the review with some perspectives in the field. We

  1. Continuous process of powder production for MOX fuel fabrication according to ''granat'' technology

    International Nuclear Information System (INIS)

    Morkovnikov, V.E.; Raginskiy, L.S.; Pavlinov, A.P.; Chernov, V.A.; Revyakin, V.V.; Varykhanov, V.S.; Revnov, V.N.

    2000-01-01

    During last years the problem of commercial MOX fuel fabrication for nuclear reactors in Russia was solved in a number of directions. The paper deals with the solution of the problem of creating a continuous pilot plant for the production of MOX fuel powders on the basis of the home technology 'Granat', that was tested before on a small-scale pilot-commercial batch-operated plant of the same name and confirmed good results. (authors)

  2. Fabrication technology of CNT-Nickel Oxide based planar pseudocapacitor for MEMS and NEMS

    Science.gov (United States)

    Lebedev, E. A.; Kitsyuk, E. P.; Gavrilin, I. M.; Gromov, D. G.; Gruzdev, N. E.; Gavrilov, S. A.; Dronov, A. A.; Pavlov, A. A.

    2015-11-01

    Fabrication technology of planar pseudocapacitor (PsC) based on carbon nanotube (CNT) forest, synthesized using plasma enhanced chemical vapor deposition (PECVD) method, covered with thin nickel oxide layer deposited by successive ionic layer adsorption and reaction (SILAR) method, is demonstrated. Dependences of deposited oxide layers thickness on device specific capacities is studied. It is shown that pseudocapacity of nickel oxide thin layer increases specific capacity of the CNT's based device up to 2.5 times.

  3. Gel-sphere-pac fuel for thermal reactors: assessment of fabrication technology and irradiation performance

    Energy Technology Data Exchange (ETDEWEB)

    Beatty, R.L. Norman, R.E.; Notz, K.J. (comps.)

    1979-11-01

    Recent interest in proliferation-resistant fuel cycles for light-water reactors has focused attention on spiked plutonium and /sup 233/U-Th fuels, requiring remote refabrication. The gel-sphere-pac process for fabricating metal-clad fuel elements has drawn special attention because it involves fewer steps. Gel-sphere-pac fabrication technology involves two major areas: the preparation of fuel spheres of high density and loading these spheres into rods in an efficiently packed geometry. Gel sphere preparation involves three major steps: preparation of a sol or of a special solution (broth), gelation of droplets of sol or broth to give semirigid spheres of controlled size, and drying and sintering these spheres to a high density. Gelation may be accomplished by water extraction (suitable only for sols) or ammonia gelation (suitable for both sols and broths but used almost exclusively with broths). Ammonia gelation can be accomplished either externally, via ammonia gas and ammonium hydroxide, or internally via an added ammonia generator such as hexamethylenetetramine. Sphere-pac fuel rod fabrication involves controlled blending and metering of three sizes of spheres into the rod and packing by low- to medium-energy vibration to achieve about 88% smear density; these sizes have diametral ratios of about 40:10:1 and are blended in size fraction amounts of about 60% coarse, 18% medium, and 22% fine. Irradiation test results indicate that sphere-pac fuel performs at least as well as pellet fuel, and may in fact offer an advantage in significantly reducing mechanical and chemical interaction between the fuel and cladding. The normal feed for gel sphere preparation, heavy metal nitrate solution, is the usual product of fuel reprocessing, so that fabrication of gel spheres performs all the functions performed by both conversion and pellet fabrication in the case of pellet technology.

  4. Gel-sphere-pac fuel for thermal reactors: assessment of fabrication technology and irradiation performance

    International Nuclear Information System (INIS)

    Beatty, R.L.; Norman, R.E.; Notz, K.J.

    1979-11-01

    Recent interest in proliferation-resistant fuel cycles for light-water reactors has focused attention on spiked plutonium and 233 U-Th fuels, requiring remote refabrication. The gel-sphere-pac process for fabricating metal-clad fuel elements has drawn special attention because it involves fewer steps. Gel-sphere-pac fabrication technology involves two major areas: the preparation of fuel spheres of high density and loading these spheres into rods in an efficiently packed geometry. Gel sphere preparation involves three major steps: preparation of a sol or of a special solution (broth), gelation of droplets of sol or broth to give semirigid spheres of controlled size, and drying and sintering these spheres to a high density. Gelation may be accomplished by water extraction (suitable only for sols) or ammonia gelation (suitable for both sols and broths but used almost exclusively with broths). Ammonia gelation can be accomplished either externally, via ammonia gas and ammonium hydroxide, or internally via an added ammonia generator such as hexamethylenetetramine. Sphere-pac fuel rod fabrication involves controlled blending and metering of three sizes of spheres into the rod and packing by low- to medium-energy vibration to achieve about 88% smear density; these sizes have diametral ratios of about 40:10:1 and are blended in size fraction amounts of about 60% coarse, 18% medium, and 22% fine. Irradiation test results indicate that sphere-pac fuel performs at least as well as pellet fuel, and may in fact offer an advantage in significantly reducing mechanical and chemical interaction between the fuel and cladding. The normal feed for gel sphere preparation, heavy metal nitrate solution, is the usual product of fuel reprocessing, so that fabrication of gel spheres performs all the functions performed by both conversion and pellet fabrication in the case of pellet technology

  5. Development of the advanced CANDU technology -Development of CANDU advanced fuel fabrication technology-

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Chang Bum; Park, Choon Hoh; Park, Chul Joo; Kwon, Woo Joo [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1995-07-01

    This project is carrying out jointly with AECL to develop CANFLEX fuel which can enhance reactor safety, fuel economy and can be used with various fuel cycles (natural U, slightly enriched U, other advanced fuel). The final goal of this research is to load the CANFLEX fuel in commercial CANDU reactor for demonstration irradiation. The annual portion of research activities performed during this year are followings ; The detail design of CANFLEX-NU fuel was determined. Based on this design, various fabrication drawings and process specifications were revised. The seventeen CANFLEX-NU fuel bundles for reactivity test in ZED-2 and out-pile test, two CANFLEX-SEU fuel bundles for demo-irradiation in NRU were fabricated. Advanced tack welding machine was designed and sequence control software of automatic assembly welder was developed. The basic researches related to fabrication processes, such as weld evaluation by ECT, effect of additives in UO{sub 2}, thermal stabilities of Zr based metallic glasses, were curried out. 51 figs, 22 tabs, 42 refs. (Author).

  6. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  7. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  8. Design and Characterization of a Fully Differential MEMS Accelerometer Fabricated Using MetalMUMPs Technology

    Directory of Open Access Journals (Sweden)

    Hongwei Qu

    2013-05-01

    Full Text Available This paper presents a fully differential single-axis accelerometer fabricated using the MetalMUMPs process. The unique structural configuration and common-centriod wiring of the metal electrodes enables a fully differential sensing scheme with robust metal sensing structures. CoventorWare is used in structural and electrical design and simulation of the fully differential accelerometer. The MUMPs foundry fabrication process of the sensor allows for high yield, good process consistency and provides 20 μm structural thickness of the sensing element, which makes the capacitive sensing eligible. In device characterization, surface profile of the fabricated device is measured using a Veeco surface profilometer; and mean and gradient residual stress in the nickel structure are calculated as approximately 94.7 MPa and −5.27 MPa/μm, respectively. Dynamic characterization of the sensor is performed using a vibration shaker with a high-end commercial calibrating accelerometer as reference. The sensitivity of the sensor is measured as 0.52 mV/g prior to off-chip amplification. Temperature dependence of the sensing capacitance is also characterized. A −0.021fF/°C is observed. The findings in the presented work will provide useful information for design of sensors and actuators such as accelerometers, gyroscopes and electrothermal actuators that are to be fabricated using MetalMUMPs technology.

  9. Design and characterization of a fully differential MEMS accelerometer fabricated using MetalMUMPs technology.

    Science.gov (United States)

    Qu, Peng; Qu, Hongwei

    2013-05-02

    This paper presents a fully differential single-axis accelerometer fabricated using the MetalMUMPs process. The unique structural configuration and common-centriod wiring of the metal electrodes enables a fully differential sensing scheme with robust metal sensing structures. CoventorWare is used in structural and electrical design and simulation of the fully differential accelerometer. The MUMPs foundry fabrication process of the sensor allows for high yield, good process consistency and provides 20 μm structural thickness of the sensing element, which makes the capacitive sensing eligible. In device characterization, surface profile of the fabricated device is measured using a Veeco surface profilometer; and mean and gradient residual stress in the nickel structure are calculated as approximately 94.7 MPa and -5.27 MPa/μm, respectively. Dynamic characterization of the sensor is performed using a vibration shaker with a high-end commercial calibrating accelerometer as reference. The sensitivity of the sensor is measured as 0.52 mV/g prior to off-chip amplification. Temperature dependence of the sensing capacitance is also characterized. A -0.021fF/°C is observed. The findings in the presented work will provide useful information for design of sensors and actuators such as accelerometers, gyroscopes and electrothermal actuators that are to be fabricated using MetalMUMPs technology.

  10. Design and Fabrication of a Miniaturized GMI Magnetic Sensor Based on Amorphous Wire by MEMS Technology

    Directory of Open Access Journals (Sweden)

    Jiawen Chen

    2018-03-01

    Full Text Available A miniaturized Co-based amorphous wire GMI (Giant magneto-impedance magnetic sensor was designed and fabricated in this paper. The Co-based amorphous wire was used as the sense element due to its high sensitivity to the magnetic field. A three-dimensional micro coil surrounding the Co-based amorphous wire was fabricated by MEMS (Micro-Electro-Mechanical System technology, which was used to extract the electrical signal. The three-dimensional micro pick-up coil was designed and simulated with HFSS (High Frequency Structure Simulator software to determine the key parameters. Surface micro machining MEMS (Micro-Electro-Mechanical System technology was employed to fabricate the three-dimensional coil. The size of the developed amorphous wire magnetic sensor is 5.6 × 1.5 × 1.1 mm3. Helmholtz coil was used to characterize the performance of the device. The test results of the sensor sample show that the voltage change is 130 mV/Oe and the linearity error is 4.83% in the range of 0~45,000 nT. The results indicate that the developed miniaturized magnetic sensor has high sensitivity. By testing the electrical resistance of the samples, the results also showed high uniformity of each device.

  11. Design and fabrication of a micro parallel mechanism system using MEMS technologies

    Science.gov (United States)

    Chin, Chi-Te

    A parallel mechanism is seen as an attractive method of fabricating a multi-degree of freedom micro-stage on a chip. The research team at Arizona State University has experience with several potential parallel mechanisms that would be scaled down to micron dimensions and fabricated by using the silicon process. The researcher developed a micro parallel mechanism that allows for planar motion having two translational motions and one rotational motion (e.g., x, y, theta). The mask design shown in Appendix B is an example of a planar parallel mechanism, however, this design would only have a few discrete positions given the nature of the fully extended or fully retracted electrostatic motor. The researcher proposes using a rotary motor (comb-drive actuator with gear chain system) coupled to a rack and pinion for finer increments of linear motion. The rotary motor can behave as a stepper motor by counting drive pulses, which is the basis for a simple open loop control system. This system was manufactured at the Central Regional MEMS Research Center (CMEMS), National Tsing-Hua University, and supported by the National Science Council, Taiwan. After the microstructures had been generated, the proceeding devices were released and an experiment study was performed to demonstrate the feasibility of the proposed micro-stage devices. In this dissertation, the micro electromechanical system (MEMS) fabrication technologies were introduced. The development of this parallel mechanism system will initially focus on development of a planar micro-stage. The design of the micro-stage will build on the parallel mechanism technology, which has been developed for manufacturing, assembly, and flight simulator applications. Parallel mechanism will give the maximum operating envelope with a minimum number of silicon levels. The ideally proposed mechanism should comprise of a user interface, a micro-stage and a non-silicon tool, which is difficult to accomplish by current MEMS technology

  12. Transition strategies for managing technological discontinuities: lessons from the history of the semiconductor industry

    NARCIS (Netherlands)

    Stoelhorst, J.W.

    2002-01-01

    This paper explores the nature of competition under conditions of technological change and asks how firms can manage technological discontinuities. By drawing on the literatures on strategic management and technology dynamics, it is proposed that firms should change the nature of their strategy as a

  13. Assessment of Anisotropic Semiconductor Nanorod and Nanoplatelet Heterostructures with Polarized Emission for Liquid Crystal Display Technology.

    Science.gov (United States)

    Cunningham, Patrick D; Souza, João B; Fedin, Igor; She, Chunxing; Lee, Byeongdu; Talapin, Dmitri V

    2016-06-28

    Semiconductor nanorods can emit linear-polarized light at efficiencies over 80%. Polarization of light in these systems, confirmed through single-rod spectroscopy, can be explained on the basis of the anisotropy of the transition dipole moment and dielectric confinement effects. Here we report emission polarization in macroscopic semiconductor-polymer composite films containing CdSe/CdS nanorods and colloidal CdSe nanoplatelets. Anisotropic nanocrystals dispersed in polymer films of poly butyl-co-isobutyl methacrylate (PBiBMA) can be stretched mechanically in order to obtain unidirectionally aligned arrays. A high degree of alignment, corresponding to an orientation factor of 0.87, was achieved and large areas demonstrated polarized emission, with the contrast ratio I∥/I⊥ = 5.6, making these films viable candidates for use in liquid crystal display (LCD) devices. To some surprise, we observed significant optical anisotropy and emission polarization for 2D CdSe nanoplatelets with the electronic structure of quantum wells. The aligned nanorod arrays serve as optical funnels, absorbing unpolarized light and re-emitting light from deep-green to red with quantum efficiencies over 90% and high degree of linear polarization. Our results conclusively demonstrate the benefits of anisotropic nanostructures for LCD backlighting. The polymer films with aligned CdSe/CdS dot-in-rod and rod-in-rod nanostructures show more than 2-fold enhancement of brightness compared to the emitter layers with randomly oriented nanostructures. This effect can be explained as the combination of linearly polarized luminescence and directional emission from individual nanostructures.

  14. Fabrication of a miniaturized cell using microsystem technologies for electrochemical applications

    International Nuclear Information System (INIS)

    Lakard, Boris; Jeannot, Jean-Claude; Spajer, Michel; Herlem, Guillaume; Labachelerie, Michel de; Blind, Pascal; Fahys, Bernard

    2005-01-01

    A new type of electrochemical cell has been developed for use in electrochemical, chemical and biological applications. Using a platinum microelectrode as working electrode, this cell incorporates a silver microelectrode as reference electrode. These microelectrodes, whose area is equal to 1 μm 2 , were fabricated using photolithography, sputtering, and focused ion beam (FIB) technologies since these micro-fabrication techniques allow us to develop miniaturized electrochemical cells useful either for nanoelectrochemistry or biosensors applications. In this study, we show it is possible to coat a surface by chemical or biological compounds by immersing the microelectrodes in a solution, then setting a difference of potential between the two microelectrodes of the cell. For example, we used this miniaturized cell to realize the electrochemical polymerization of aniline into polyaniline to show that this electrochemical cell is efficient to coat a surface with a thin film of polymer

  15. A Fully Integrated Humidity Sensor System-on-Chip Fabricated by Micro-Stamping Technology

    Science.gov (United States)

    Huang, Che-Wei; Huang, Yu-Jie; Lu, Shey-Shi; Lin, Chih-Ting

    2012-01-01

    A fully integrated humidity sensor chip was designed, implemented, and tested. Utilizing the micro-stamping technology, the pseudo-3D sensor system-on-chip (SSoC) architecture can be implemented by stacking sensing materials directly on the top of a CMOS-fabricated chip. The fabricated sensor system-on-chip (2.28 mm × 2.48 mm) integrated a humidity sensor, an interface circuit, a digital controller, and an On-Off Keying (OOK) wireless transceiver. With low power consumption, i.e., 750 μW without RF operation, the sensitivity of developed sensor chip was experimentally verified in the relative humidity (RH) range from 32% to 60%. The response time of the chip was also experimentally verified to be within 5 seconds from RH 36% to RH 64%. As a consequence, the implemented humidity SSoC paves the way toward the an ultra-small sensor system for various applications.

  16. Epitaxy - a new technology for fabrication of advanced silicon radiation detectors

    International Nuclear Information System (INIS)

    Kemmer, J.; Wiest, F.; Pahlke, A.; Boslau, O.; Goldstrass, P.; Eggert, T.; Schindler, M.; Eisele, I.

    2005-01-01

    Twenty five years after the introduction of the planar process to the fabrication of silicon radiation detectors a new technology, which replaces the ion implantation doping by silicon epitaxy is presented. The power of this new technique is demonstrated by fabrication of silicon drift detectors (SDDs), whereby both the n-type and p-type implants are replaced by n-type and p-type epi-layers. The very first SDDs ever produced with this technique show energy resolutions of 150 eV for 55 Fe at -35 deg C. The area of the detectors is 10 mm 2 and the thickness 300 μm. The high potential of epitaxy for future detectors with integrated complex electronics is described

  17. A review on the development of the MOX fuel fabrication technology

    Energy Technology Data Exchange (ETDEWEB)

    Kim, See Hyung; Lee, Yung Woo; Sohn, Dong Sung; Yang, Myung Seung; Bae, Kee Kwang; Nah, Sang Hoh; Kim, Han Soo; Lee, Jung Won; Kim, Bong Koo; Song, Keun Woo [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1995-07-01

    Development of the Mixed Oxide(MOX) fuel fabrication technology was reviewed in this study. Firstly, the feasibility of Pu utilization for nuclear fuel was analyzed by comparison of nuclear characteristics between U and Pu. Secondly, the feature and problem of processes developed so far was revealed and analyzed by reviewing each process in terms of technical difficulties and in connection with the pellet characteristics. Also, fabrication facilities currently existing were analyzed to understand particularities and circumstances in view of Pu handling, and finally, in-reactor behaviors of MOX fuel was compared with those of U fuel to understand how the Pu has an effect on fuel was compared with those of U fuel to understand how the Pu has an effect on fuel pellet structure and fuel rod. 73 figs., 15 tabs., 58 refs. (Author).

  18. Technical issues of fabrication technologies of reduced activation ferritic/martensitic steels

    International Nuclear Information System (INIS)

    Tanigawa, Hiroyasu; Sakasegawa, Hideo; Hirose, Takanori

    2013-01-01

    Highlights: • The key technical issues of RAFM steel fabrication are the control of Ta, and deoxidation of the steel with a limited amount of Al addition. • Addition of Ta with poor deoxidation might results in the agglomeration of inclusions at 1/2t position. • ESR was proved to be effective removing Ta oxide inclusions and avoiding agglomeration of inclusions at 1/2t position, and achieving low oxygen concentration. -- Abstract: The key issue for DEMO application is that Reduced activation ferritic/martensitic (RAFM) steels fabrication technologies has to be highly assured, especially with respect to high availability, reliability and reduced activation capability on the DEMO level fabrication, which requires not a few tons but thousand tons RAFM fabrication. One of the key technical issues of RAFM fabrication is the control of Ta, and deoxidation of the steel with a limited amount of Al addition. The series of F82H (Fe–8Cr–2W–V, Ta) melting revealed that Ta have tendency to form oxide on melting process, and this will have large impact on reliability of the steels. Al is also the key elements, as it is commonly used for deoxidation of steels, and achieving lower oxygen level is essential to obtain good mechanical properties, but the maximum concentration of Al is limited in view of reduced activation capability. These tendency and limitation resulted in the Ta oxide agglomeration in the middle of plate, but the remelting process, ESR (electro slag remelting), was found to be successful on removing those Ta oxides

  19. Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

    Science.gov (United States)

    Beheim, Glenn M.

    2003-01-01

    The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were

  20. Architectures for Improved Organic Semiconductor Devices

    Science.gov (United States)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

  1. Marginal adaptation and CAD-CAM technology: A systematic review of restorative material and fabrication techniques.

    Science.gov (United States)

    Papadiochou, Sofia; Pissiotis, Argirios L

    2018-04-01

    The comparative assessment of computer-aided design and computer-aided manufacturing (CAD-CAM) technology and other fabrication techniques pertaining to marginal adaptation should be documented. Limited evidence exists on the effect of restorative material on the performance of a CAD-CAM system relative to marginal adaptation. The purpose of this systematic review was to investigate whether the marginal adaptation of CAD-CAM single crowns, fixed dental prostheses, and implant-retained fixed dental prostheses or their infrastructures differs from that obtained by other fabrication techniques using a similar restorative material and whether it depends on the type of restorative material. An electronic search of English-language literature published between January 1, 2000, and June 30, 2016, was conducted of the Medline/PubMed database. Of the 55 included comparative studies, 28 compared CAD-CAM technology with conventional fabrication techniques, 12 contrasted CAD-CAM technology and copy milling, 4 compared CAD-CAM milling with direct metal laser sintering (DMLS), and 22 investigated the performance of a CAD-CAM system regarding marginal adaptation in restorations/infrastructures produced with different restorative materials. Most of the CAD-CAM restorations/infrastructures were within the clinically acceptable marginal discrepancy (MD) range. The performance of a CAD-CAM system relative to marginal adaptation is influenced by the restorative material. Compared with CAD-CAM, most of the heat-pressed lithium disilicate crowns displayed equal or smaller MD values. Slip-casting crowns exhibited similar or better marginal accuracy than those fabricated with CAD-CAM. Cobalt-chromium and titanium implant infrastructures produced using a CAD-CAM system elicited smaller MD values than zirconia. The majority of cobalt-chromium restorations/infrastructures produced by DMLS displayed better marginal accuracy than those fabricated with the casting technique. Compared with copy

  2. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  3. An Overview of Scaffold Design and Fabrication Technology for Engineered Knee Meniscus

    Directory of Open Access Journals (Sweden)

    Jie Sun

    2017-01-01

    Full Text Available Current surgical treatments for meniscal tears suffer from subsequent degeneration of knee joints, limited donor organs and inconsistent post-treatment results. Three clinical scaffolds (Menaflex CMI, Actifit® scaffold and NUsurface® Meniscus Implant are available on the market, but additional data are needed to properly evaluate their safety and effectiveness. Thus, many scaffold-based research activities have been done to develop new materials, structures and fabrication technologies to mimic native meniscus for cell attachment and subsequent tissue development, and restore functionalities of injured meniscus for long-term effects. This study begins with a synopsis of relevant structural features of meniscus and goes on to describe the critical considerations. Promising advances made in the field of meniscal scaffolding technology, in terms of biocompatible materials, fabrication methods, structure design and their impact on mechanical and biological properties are discussed in detail. Among all the scaffolding technologies, additive manufacturing (AM is very promising because of its ability to precisely control fiber diameter, orientation, and pore network micro-architecture to mimic the native meniscus microenvironment.

  4. [Design and fabrication of the custom-made titanium condyle by selective laser melting technology].

    Science.gov (United States)

    Chen, Jianyu; Luo, Chongdai; Zhang, Chunyu; Zhang, Gong; Qiu, Weiqian; Zhang, Zhiguang

    2014-10-01

    To design and fabricate the custom-made titanium mandibular condyle by the reverse engineering technology combined with selective laser melting (SLM) technology and to explore the mechanical properties of the SLM-processed samples and the application of the custom-made condyle in the temporomandibular joint (TMJ) reconstruction. The three-dimensional model of the mandibular condyle was obtained from a series of CT databases. The custom-made condyle model was designed by the reverse engineering software. The mandibular condyle was made of titanium powder with a particle size of 20-65 µm as the basic material and the processing was carried out in an argon atmosphere by the SLM machine. The yield strength, ultimate strength, bending strength, hardness, surface morphology and roughness were tested and analyzed. The finite element analysis (FEA) was used to analyze the stress distribution. The complex geometry and the surface of the custom-made condyle can be reproduced precisely by the SLM. The mechanical results showed that the yield strength, ultimate strength, bending strength and hardness were (559±14) MPa, (659±32) MPa, (1 067±42) MPa, and (212±4)HV, respectively. The surface roughness was reduced by sandblast treatment. The custom-made titanium condyle can be fabricated by SLM technology which is time-saving and highly digitized. The mechanical properties of the SLM sample can meet the requirements of surgical implant material in the clinic. The possibility of fabricating custom-made titanium mandibular condyle combined with the FEA opens new interesting perspectives for TMJ reconstruction.

  5. Circuit design techniques for non-crystalline semiconductors

    CERN Document Server

    Sambandan, Sanjiv

    2012-01-01

    Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Crystalline Semiconductors outlines a systematic design approach, including circuit theory, enabling users to synthesize circuits without worrying about the details of device physics. This book: Offers examples of how self-assembly can be used as a powerf

  6. Full size U-10Mo monolithic fuel foil and fuel plate fabrication-technology development

    International Nuclear Information System (INIS)

    Moore, G.A.; Jue, J-F.; Rabin, B.H.; Nilles, M.J.

    2010-01-01

    Full-size U-10Mo foils are being developed for use in high density LEU monolithic fuel plates. The application of a zirconium barrier layer to the foil is performed using a hot co-rolling process. Aluminium clad fuel plates are fabricated using Hot Isostatic Pressing (HIP) or a Friction Bonding (FB) process. An overview is provided of ongoing technology development activities, including: the co-rolling process, foil shearing/slitting and polishing, cladding bonding processes, plate forming, plate-assembly swaging, and fuel plate characterization. Characterization techniques being employed include, Ultrasonic Testing (UT), radiography, and microscopy. (author)

  7. Technological innovations for a sustainable business model in the semiconductor industry

    Science.gov (United States)

    Levinson, Harry J.

    2014-09-01

    Increasing costs of wafer processing, particularly for lithographic processes, have made it increasingly difficult to achieve simultaneous reductions in cost-per-function and area per device. Multiple patterning techniques have made possible the fabrication of circuit layouts below the resolution limit of single optical exposures but have led to significant increases in the costs of patterning. Innovative techniques, such as self-aligned double patterning (SADP) have enabled good device performance when using less expensive patterning equipment. Other innovations have directly reduced the cost of manufacturing. A number of technical challenges must be overcome to enable a return to single-exposure patterning using short wavelength optical techniques, such as EUV patterning.

  8. Semiconductor detectors with proximity signal readout

    International Nuclear Information System (INIS)

    Asztalos, Stephen J.

    2012-01-01

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need

  9. Based on Weibull Information Fusion Analysis Semiconductors Quality the Key Technology of Manufacturing Execution Systems Reliability

    Science.gov (United States)

    Huang, Zhi-Hui; Tang, Ying-Chun; Dai, Kai

    2016-05-01

    Semiconductor materials and Product qualified rate are directly related to the manufacturing costs and survival of the enterprise. Application a dynamic reliability growth analysis method studies manufacturing execution system reliability growth to improve product quality. Refer to classical Duane model assumptions and tracking growth forecasts the TGP programming model, through the failure data, established the Weibull distribution model. Combining with the median rank of average rank method, through linear regression and least squares estimation method, match respectively weibull information fusion reliability growth curve. This assumption model overcome Duane model a weakness which is MTBF point estimation accuracy is not high, through the analysis of the failure data show that the method is an instance of the test and evaluation modeling process are basically identical. Median rank in the statistics is used to determine the method of random variable distribution function, which is a good way to solve the problem of complex systems such as the limited sample size. Therefore this method has great engineering application value.

  10. Fabrication of interdigitated electrodes by inkjet printing technology for apllication in ammonia sensing

    International Nuclear Information System (INIS)

    Le, Duy Dam; Nguyen, Thi Ngoc Nhien; Doan, Duc Chanh Tin; Dang, Thi My Dung; Dang, Mau Chien

    2016-01-01

    In this paper interdigitated electrodes for gas sensors were fabricated by inkjet printing technology. Silver electrodes were inkjet printed on Si/SiO 2 substrates instead of traditional photolithography method. The inkjet printing parameters to obtain desired dimensions, thickness of the electrodes and distance between the interdigitated electrodes were optimized in this study. The fabricated interdigitated silver electrodes were tested for application in ammonia gas sensors. Conductive polyaniline (PANI) layer was coated on the silver interdigitated electrodes by drop-coating. Ammonia detection of the PANI-coated chips was characterized with a gas measurement system in which humidity and ammonia concentrations were well-controlled. The electrical conductivity of the PANI films coated on the electrodes was measured when the PANI films were exposed to nitrogen and ammonia. The conductivity of the PANI films decreased significantly due to the deprotonation process of PANI upon ammonia expodure. The recovery time was about 15 min by heating up the polymer chip at 60 °C. The results showed that the silver electrodes fabricated by inkjet printing technique could be used as a sensor platform for ammonia detection. (paper)

  11. Marginal Accuracy and Internal Fit of Dental Copings Fabricated by Modern Additive and Subtractive Digital Technologies.

    Science.gov (United States)

    Nelson, Neha; K S, Jyothi; Sunny, Kiran

    2017-03-01

    The margins of copings for crowns and retainers of fixed partial dentures affect the progress of microleakage and dental caries. Failures occur due to altered fit which is also influenced by the method of fabrication. An in-vitro study was conducted to determine among the cast base metal, copy milled zirconia, computer aided designing computer aided machining/manufacturing zirconia and direct metal laser sintered copings which showed best marginal accuracy and internal fit. Forty extracted maxillary premolars were mounted on an acrylic model and reduced occlusally using a milling machine up to a final tooth height of 4 mm from the cementoenamel junction. Axial reduction was accomplished on a surveyor and a chamfer finish line was given. The impressions and dies were made for fabrication of copings which were luted on the prepared teeth under standardized loading, embedded in self-cure acrylic resin, sectioned and observed using scanning electron microscope for internal gap and marginal accuracy. The copings fabricated using direct metal laser sintering technique exhibited best marginal accuracy and internal fit. Comparison of mean between the four groups by ANOVA and post-hoc Tukey HSD tests showed a statistically significant difference between all the groups (p⟨0.05). It was concluded that the copings fabricated using direct metal laser sintering technique exhibited best marginal accuracy and internal fit. Additive digital technologies such as direct metal laser sintering could be cost-effective for the clinician, minimize failures related to fit and increase longevity of teeth and prostheses. Copyright© 2017 Dennis Barber Ltd.

  12. Miniaturized, Planar Ion-selective Electrodes Fabricated by Means of Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Robert Koncki

    2006-04-01

    Full Text Available Various planar technologies are employed for developing solid-state sensorshaving low cost, small size and high reproducibility; thin- and thick-film technologies aremost suitable for such productions. Screen-printing is especially suitable due to itssimplicity, low-cost, high reproducibility and efficiency in large-scale production. Thistechnology enables the deposition of a thick layer and allows precise pattern control.Moreover, this is a highly economic technology, saving large amounts of the used inks. Inthe course of repetitions of the film-deposition procedure there is no waste of material dueto additivity of this thick-film technology. Finally, the thick films can be easily and quicklydeposited on inexpensive substrates. In this contribution, thick-film ion-selective electrodesbased on ionophores as well as crystalline ion-selective materials dedicated forpotentiometric measurements are demonstrated. Analytical parameters of these sensors arecomparable with those reported for conventional potentiometric electrodes. All mentionedthick-film strip electrodes have been totally fabricated in only one, fully automated thick-film technology, without any additional manual, chemical or electrochemical steps. In allcases simple, inexpensive, commercially available materials, i.e. flexible, plastic substratesand easily cured polymer-based pastes were used.

  13. Metal forming technology for the fabrication of seamless Superconducting radiofrequency cavities for particle accelerators

    Directory of Open Access Journals (Sweden)

    Palmieri Vincenzo

    2015-01-01

    Full Text Available The world of Particle accelerators is rather unique, since in a few high-energy Physics great laboratories, such at CERN for example, there have been built the largest technological installations ever conceived by humankind. The Radiofrequency resonant cavities are the pulsing heart of an accelerator. In case of superconducting accelerators, bulk niobium cavities, able to perform accelerating gradients up to 40 MeV/m, are just a jewel of modern technology. The standard fabrication technology foresees the cutting of circular blanks, their deep-drawing into half-cells, and its further joining by electron beam welding under ultra high vacuum environment that takes several hours. However, proposals such as the International Linear Collider, to which more than 900 scientists from all over the world participate, foresee the installation of 20.000 cavities. In numbers, it means the electron beam weld one by one under Ultra High Vacuum of 360,000 hemi-cells. At a cost of 500 €/Kg of high purity Niobium, this will mean a couple of hundreds of millions of Euros only for the bare material. In this panorama it is evident that a cost reducing approach must be considered. In alternative the author has proposed a seamless and low cost fabrication method based on spinning of fully resonators. Preliminary RF tests at low temperatures have proved that high accelerating gradients are achievable and that they are not worse than those obtainable with the standard technology. Nevertheless up to when the next accelerator will be decided to be built there is still room for improvement.

  14. Cartilage Tissue Engineering with Silk Fibroin Scaffolds Fabricated by Indirect Additive Manufacturing Technology.

    Science.gov (United States)

    Chen, Chih-Hao; Liu, Jolene Mei-Jun; Chua, Chee-Kai; Chou, Siaw-Meng; Shyu, Victor Bong-Hang; Chen, Jyh-Ping

    2014-03-13

    Advanced tissue engineering (TE) technology based on additive manufacturing (AM) can fabricate scaffolds with a three-dimensional (3D) environment suitable for cartilage regeneration. Specifically, AM technology may allow the incorporation of complex architectural features. The present study involves the fabrication of 3D TE scaffolds by an indirect AM approach using silk fibroin (SF). From scanning electron microscopic observations, the presence of micro-pores and interconnected channels within the scaffold could be verified, resulting in a TE scaffold with both micro- and macro-structural features. The intrinsic properties, such as the chemical structure and thermal characteristics of SF, were preserved after the indirect AM manufacturing process. In vitro cell culture within the SF scaffold using porcine articular chondrocytes showed a steady increase in cell numbers up to Day 14. The specific production (per cell basis) of the cartilage-specific extracellular matrix component (collagen Type II) was enhanced with culture time up to 12 weeks, indicating the re-differentiation of chondrocytes within the scaffold. Subcutaneous implantation of the scaffold-chondrocyte constructs in nude mice also confirmed the formation of ectopic cartilage by histological examination and immunostaining.

  15. Cartilage Tissue Engineering with Silk Fibroin Scaffolds Fabricated by Indirect Additive Manufacturing Technology

    Directory of Open Access Journals (Sweden)

    Chih-Hao Chen

    2014-03-01

    Full Text Available Advanced tissue engineering (TE technology based on additive manufacturing (AM can fabricate scaffolds with a three-dimensional (3D environment suitable for cartilage regeneration. Specifically, AM technology may allow the incorporation of complex architectural features. The present study involves the fabrication of 3D TE scaffolds by an indirect AM approach using silk fibroin (SF. From scanning electron microscopic observations, the presence of micro-pores and interconnected channels within the scaffold could be verified, resulting in a TE scaffold with both micro- and macro-structural features. The intrinsic properties, such as the chemical structure and thermal characteristics of SF, were preserved after the indirect AM manufacturing process. In vitro cell culture within the SF scaffold using porcine articular chondrocytes showed a steady increase in cell numbers up to Day 14. The specific production (per cell basis of the cartilage-specific extracellular matrix component (collagen Type II was enhanced with culture time up to 12 weeks, indicating the re-differentiation of chondrocytes within the scaffold. Subcutaneous implantation of the scaffold-chondrocyte constructs in nude mice also confirmed the formation of ectopic cartilage by histological examination and immunostaining.

  16. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  17. Research on fabrication of aspheres at the Center of Optics Technology (University of Applied Science in Aalen); Techical Digest

    Science.gov (United States)

    Boerret, Rainer; Burger, Jochen; Bich, Andreas; Gall, Christoph; Hellmuth, Thomas

    2005-05-01

    The Center of Optics Technology at the University of Applied Science, founded in 2003, is part of the School of Optics and Mechatronics. It completes the existing optical engineering department with a full optical fabrication and metrology chain and serves in parallel as a technology transfer center, to provide area industries with the most up-to-date technology in optical fabrication and engineering. Two examples of research work will be presented. The first example is the optimizing of the grinding process for high precision aspheres, the other is generating and polishing of a freeform optical element which is used as a phase plate.

  18. Comparison of Fit of Dentures Fabricated by Traditional Techniques Versus CAD/CAM Technology.

    Science.gov (United States)

    McLaughlin, J Bryan; Ramos, Van; Dickinson, Douglas P

    2017-11-14

    To compare the shrinkage of denture bases fabricated by three methods: CAD/CAM, compression molding, and injection molding. The effect of arch form and palate depth was also tested. Nine titanium casts, representing combinations of tapered, ovoid, and square arch forms and shallow, medium, and deep palate depths, were fabricated using electron beam melting (EBM) technology. For each base fabrication method, three poly(vinyl siloxane) impressions were made from each cast, 27 dentures for each method. Compression-molded dentures were fabricated using Lucitone 199 poly methyl methacrylate (PMMA), and injection molded dentures with Ivobase's Hybrid Pink PMMA. For CAD/CAM, denture bases were designed and milled by Avadent using their Light PMMA. To quantify the space between the denture and the master cast, silicone duplicating material was placed in the intaglio of the dentures, the titanium master cast was seated under pressure, and the silicone was then trimmed and recovered. Three silicone measurements per denture were recorded, for a total of 243 measurements. Each silicone measurement was weighed and adjusted to the surface area of the respective arch, giving an average and standard deviation for each denture. Comparison of manufacturing methods showed a statistically significant difference (p = 0.0001). Using a ratio of the means, compression molding had on average 41% to 47% more space than injection molding and CAD/CAM. Comparison of arch/palate forms showed a statistically significant difference (p = 0.023), with shallow palate forms having more space with compression molding. The ovoid shallow form showed CAD/CAM and compression molding had more space than injection molding. Overall, injection molding and CAD/CAM fabrication methods produced equally well-fitting dentures, with both having a better fit than compression molding. Shallow palates appear to be more affected by shrinkage than medium or deep palates. Shallow ovoid arch forms appear to benefit from

  19. Technology life cycle and specialization patterns of latecomer countries: The case of the semiconductor industry

    NARCIS (Netherlands)

    Triulzi, G.

    2014-01-01

    Catching-up, leapfrogging and falling behind in terms of output and productivity in high-tech industries crucially depends on firms' ability to keep pace with technological change. In fast changing industries today's specialization does not guarantee tomorrow's success as changes in the

  20. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  1. Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

    Science.gov (United States)

    Liu, Yongxun; Tanaka, Hiroyuki; Umeyama, Norio; Koga, Kazuhiro; Khumpuang, Sommawan; Nagao, Masayoshi; Matsukawa, Takashi; Hara, Shiro

    2018-06-01

    P-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) with the 〈110〉 or 〈100〉 channel direction have been successfully fabricated on circular silicon-on-insulator (SOI) diaphragms using a cost-effective minimal-fab process, and their electrical characteristics have been systematically investigated before and after the SOI diaphragm formation. It was found that almost the same subthreshold slope (S-slope) and threshold voltage (V t) are observed in the fabricated PMOSFETs before and after the SOI diaphragm formation, and they are independent of the channel direction. On the other hand, significant variations in drain current were observed in the fabricated PMOSFETs with the 〈110〉 channel direction after the SOI diaphragm formation owing to the residual mechanical stress-induced piezoresistive effect. It was also confirmed that electrical characteristics of the fabricated PMOSFETs with the 〈100〉 channel direction are almost the same before and after the SOI diaphragm formation, i.e., not sensitive to the mechanical stress. Moreover, the drain current variations at different directions of mechanical stress and current flow were systematically investigated and discussed.

  2. Fundamentals of semiconductor manufacturing and process control

    CERN Document Server

    May, Gary S

    2006-01-01

    A practical guide to semiconductor manufacturing from process control to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Control covers all issues involved in manufacturing microelectronic devices and circuits, including fabrication sequences, process control, experimental design, process modeling, yield modeling, and CIM/CAM systems. Readers are introduced to both the theory and practice of all basic manufacturing concepts. Following an overview of manufacturing and technology, the text explores process monitoring methods, including those that focus on product wafers and those that focus on the equipment used to produce wafers. Next, the text sets forth some fundamentals of statistics and yield modeling, which set the foundation for a detailed discussion of how statistical process control is used to analyze quality and improve yields. The discussion of statistical experimental design offers readers a powerful approach for systematically varying controllable p...

  3. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  4. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  5. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  6. Ag-based semiconductor photocatalysts in environmental purification

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jiade; Fang, Wen [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Yu, Changlin, E-mail: yuchanglinjx@163.com [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); School of Environment Engineering and biology Engineering, Guangdong University of Petrochemical Technology, Maoming, 525000 Guangdong Province (China); Zhou, Wanqin [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, 350002 (China); Zhu, Lihua [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Xie, Yu, E-mail: xieyu_121@163.com [College of Environment and Chemical Engineering, Nanchang Hangkong University, Nanchang 330063, Jiangxi (China)

    2015-12-15

    Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO{sub 2}, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

  7. Ag-based semiconductor photocatalysts in environmental purification

    International Nuclear Information System (INIS)

    Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; Zhu, Lihua; Xie, Yu

    2015-01-01

    Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO 2 , ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

  8. Development of IN-RAFM steel and fabrication technologies for Indian TBM

    Energy Technology Data Exchange (ETDEWEB)

    Albert, S.K., E-mail: shaju@igcar.gov.in [Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603 102 (India); Laha, K.; Bhaduri, A.K.; Jayakumar, T. [Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603 102 (India); Rajendrakumar, E. [TBM Division, Institute of Plasma Research, Bhat, Gandhinagar 382428 (India)

    2016-11-01

    that processing parameters have a major role in ensuring consistency in the property of the steel. Accordingly, processing map for this steel has been generated from compression tests conducted at various strain rates and temperature. Safe processing zone of temperature and strain rate has been identified from this map. During technology development for electron beam (EB) welding of IN-RAFM steel, it is found that ductile brittle transformation temperature (DBTT) for the weld metal is higher than that of the base metal and this is attributed to high W content in the steel and consequent formation of delta-ferrite in the weld metal. A welding procedure that produces weld metal with DBTT comparable to that of the base metal has been developed. IN-RAFM filler wires with matching composition to that of the base metal have been produced for TIG and NG-TIG (narrow gap-TIG) welds and the qualification of this consumable is in progress. For fabrication of TBM first wall, which is ‘C’ shaped plate with internal channels, hot isostatic pressing (HIP) of grooved plates which are pre-bent and assembled with ceramic core to produce channel is being adopted. Curved ceramic core and procedure to join this with straight core have already been developed and production of channel plate is in progress. Further, fabrication of three mock up ceramic breeder cassettes each using EB, laser and TIG welding techniques respectively has also been initiated. Fabrication of these mock ups is expected to help in finalizing the fabrication procedures for the actual breeder cassettes to be used in Indian TBM. Details of these developments in material, data generation and fabrication of mock ups of different components of TBM towards realization of the Indian TBM are being presented in this paper.

  9. Fiscal 1998 research achievement report. Development of key technology for high-efficiency semiconductor manufacturing process; 1998 nendo kokoritsu handotai seizo process kiban gijutsu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-05-01

    In the development of large-aperture/high-density plasma technology, research and development was carried out for balanced electron drift plasma technologies for uniform control of plasma density and the like, such as an excited plasma source and plasma drift to enable wide-range plasma generation in a chamber. In the development of high-efficiency exposure technology, studies were made for stable generation and control of short wavelength excimer laser and for higher-speed large-aperture mask writing by use of an electron beam. In the development of higher-speed processing and energy-efficient technologies, research and development was conducted involving probe card technology for increasing the speed of semiconductor inspection, software-aided virtual tester technology, local energy-efficient cleaning technology in wafer processing and transportation, sheet-type flexible manufacturing system, and the like. (NEDO)

  10. Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies

    Science.gov (United States)

    Seo, Hosung; Ma, He; Govoni, Marco; Galli, Giulia

    2017-12-01

    The development of novel quantum bits is key to extending the scope of solid-state quantum-information science and technology. Using first-principles calculations, we propose that large metal ion-vacancy pairs are promising qubit candidates in two binary crystals: 4 H -SiC and w -AlN. In particular, we found that the formation of neutral Hf- and Zr-vacancy pairs is energetically favorable in both solids; these defects have spin-triplet ground states, with electronic structures similar to those of the diamond nitrogen-vacancy center and the SiC divacancy. Interestingly, they exhibit different spin-strain coupling characteristics, and the nature of heavy metal ions may allow for easy defect implantation in desired lattice locations and ensure stability against defect diffusion. To support future experimental identification of the proposed defects, we report predictions of their optical zero-phonon line, zero-field splitting, and hyperfine parameters. The defect design concept identified here may be generalized to other binary semiconductors to facilitate the exploration of new solid-state qubits.

  11. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  12. A Fully Integrated Humidity Sensor System-on-Chip Fabricated by Micro-Stamping Technology

    Directory of Open Access Journals (Sweden)

    Chih-Ting Lin

    2012-08-01

    Full Text Available A fully integrated humidity sensor chip was designed, implemented, and tested. Utilizing the micro-stamping technology, the pseudo-3D sensor system-on-chip (SSoC architecture can be implemented by stacking sensing materials directly on the top of a CMOS-fabricated chip. The fabricated sensor system-on-chip (2.28 mm × 2.48 mm integrated a humidity sensor, an interface circuit, a digital controller, and an On-Off Keying (OOK wireless transceiver. With low power consumption, i.e., 750 μW without RF operation, the sensitivity of developed sensor chip was experimentally verified in the relative humidity (RH range from 32% to 60%. The response time of the chip was also experimentally verified to be within 5 seconds from RH 36% to RH 64%. As a consequence, the implemented humidity SSoC paves the way toward the an ultra-small sensor system for various applications.

  13. Current status of technology development for fabrication of Indian Test Blanket Module (TBM) of ITER

    Energy Technology Data Exchange (ETDEWEB)

    Jayakumar, T., E-mail: tjk@igcar.gov.in [Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102 (India); Rajendra Kumar, E. [TBM Division, Institute for Plasma Research (IPR), Bhat, Gandhinagar 382428 (India)

    2014-10-15

    Highlights: • Status of technology developments for Indian TBM to be installed in ITER is presented. • Procedure development for EB, laser and laser-hybrid welding of RAFM steel presented. • Filler wires for RAFM steel for TIG, NG-TIG and laser-hybrid welding have been developed. • Feasibility of production of channel plate by HIP technology has been demonstrated. - Abstract: Ever since India decided to install its Lead-Lithium Ceramic Breeder (LLCB) TBM in ITER, various technologies for fabrication of Indian TBM are being pursued by IPR and IGCAR, in collaboration with various research laboratories in India. Welding consumables for joining India specific RAFM steels (IN-RAFMS), procedures for hot isostatic pressing, electron beam welding, laser and laser-hybrid welding have been developed. Considering the complex nature and limited access available for inspection, innovative inspection procedures that involved use of phased array ultrasonic and C-scan imaging are also being pursued. This paper presents the current status of these developments and provides a roadmap for the future activities planned in realizing Indian TBM for testing in ITER.

  14. Low-temperature deposition manufacturing: A novel and promising rapid prototyping technology for the fabrication of tissue-engineered scaffold.

    Science.gov (United States)

    Liu, Wei; Wang, Daming; Huang, Jianghong; Wei, You; Xiong, Jianyi; Zhu, Weimin; Duan, Li; Chen, Jielin; Sun, Rong; Wang, Daping

    2017-01-01

    Developed in recent years, low-temperature deposition manufacturing (LDM) represents one of the most promising rapid prototyping technologies. It is not only based on rapid deposition manufacturing process but also combined with phase separation process. Besides the controlled macropore size, tissue-engineered scaffold fabricated by LDM has inter-connected micropores in the deposited lines. More importantly, it is a green manufacturing process that involves non-heating liquefying of materials. It has been employed to fabricate tissue-engineered scaffolds for bone, cartilage, blood vessel and nerve tissue regenerations. It is a promising technology in the fabrication of tissue-engineered scaffold similar to ideal scaffold and the design of complex organs. In the current paper, this novel LDM technology is introduced, and its control parameters, biomedical applications and challenges are included and discussed as well. Copyright © 2016 Elsevier B.V. All rights reserved.

  15. Fabrication of 32Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology

    International Nuclear Information System (INIS)

    Zhou Dai-Bing; Wang Hui-Tao; Zhang Rui-Kang; Wang Bao-Jun; Bian Jing; An Xin; Lu Dan; Zhao Ling-Juan; Zhu Hong-Liang; Ji Chen; Wang Wei

    2015-01-01

    A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13 mA. The output power exceeds 10 mW at 0 V bias when the injection current of the distributed feedback laser is 100 mA at 25°C. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.5V pp nonreturn-to-zero pseudorandom modulation signal at −2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained. (paper)

  16. Fabrications and Performance of Wireless LC Pressure Sensors through LTCC Technology.

    Science.gov (United States)

    Lin, Lin; Ma, Mingsheng; Zhang, Faqiang; Liu, Feng; Liu, Zhifu; Li, Yongxiang

    2018-01-25

    This paper presents a kind of passive wireless pressure sensor comprised of a planar spiral inductor and a cavity parallel plate capacitor fabricated through low-temperature co-fired ceramic (LTCC) technology. The LTCC material with a low Young's modulus of ~65 GPa prepared by our laboratory was used to obtain high sensitivity. A three-step lamination process was applied to construct a high quality cavity structure without using any sacrificial materials. The effects of the thickness of the sensing membranes on the sensitivity and detection range of the pressure sensors were investigated. The sensor with a 148 μm sensing membrane showed the highest sensitivity of 3.76 kHz/kPa, and the sensor with a 432 μm sensing membrane presented a high detection limit of 2660 kPa. The tunable sensitivity and detection limit of the wireless pressure sensors can meet the requirements of different scenes.

  17. Novel MEMS-based fabrication technology of micro solenoid-type inductor

    International Nuclear Information System (INIS)

    Uchiyama, S; Yang, Z Q; Takagi, H; Itoh, T; Maeda, R; Zhang, Y; Toda, A; Hayase, M

    2013-01-01

    Solenoid configuration of micro inductor, which has advantages of high quality factor and low loss, is needed in micro energy and power electronics applications but it is difficult to prepare using conventional microfabrication processes. In this work, we present a new microelectromechanical systems-based technology of micro solenoid-type inductor by a newly developed cylindrical projection photolithography method. Direct electroplating process of copper film on coil patterns was also successfully developed for achieving thick windings so that thick photoresist-based electroplating molds are not needed. Micro solenoid-type inductor prototypes of the winding pitch of about 40 µm, the winding number of 20 and 50, and the winding thickness of about 14 µm, were successfully fabricated on a 1 mm diameter glass capillary. The prepared 20-turn and 50-turn micro inductors were of inductance of 69 and 205 nH at 30 MHz, respectively. (paper)

  18. Control technology for integrated circuit fabrication at Micro-Circuit Engineering, Incorporated, West Palm Beach, Florida

    Science.gov (United States)

    Mihlan, G. I.; Mitchell, R. I.; Smith, R. K.

    1984-07-01

    A survey to assess control technology for integrated circuit fabrication was conducted. Engineering controls included local and general exhaust ventilation, shielding, and personal protective equipment. Devices or work stations that contained toxic materials that were potentially dangerous were controlled by local exhaust ventilation. Less hazardous areas were controlled by general exhaust ventilation. Process isolation was used in the plasma etching, low pressure chemical vapor deposition, and metallization operations. Shielding was used in ion implantation units to control X-ray emissions, in contact mask alignes to limit ultraviolet (UV) emissions, and in plasma etching units to control radiofrequency and UV emissions. Most operations were automated. Use of personal protective equipment varied by job function.

  19. The FinFET Breakthrough and Networks of Innovation in the Semiconductor Industry, 1980-2005: Applying Digital Tools to the History of Technology.

    Science.gov (United States)

    O'Reagan, Douglas; Fleming, Lee

    2018-01-01

    The "FinFET" design for transistors, developed at the University of California, Berkeley, in the 1990s, represented a major leap forward in the semiconductor industry. Understanding its origins and importance requires deep knowledge of local factors, such as the relationships among the lab's principal investigators, students, staff, and the institution. It also requires understanding this lab within the broader network of relationships that comprise the semiconductor industry-a much more difficult task using traditional historical methods, due to the paucity of sources on industrial research. This article is simultaneously 1) a history of an impactful technology and its social context, 2) an experiment in using data tools and visualizations as a complement to archival and oral history sources, to clarify and explore these "big picture" dimensions, and 3) an introduction to specific data visualization tools that we hope will be useful to historians of technology more generally.

  20. Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

    International Nuclear Information System (INIS)

    Weng, W.T.; Lin, H.C.; Huang, T.Y.; Lee, Y.J.; Lin, H.C.

    2009-01-01

    This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO 2 /poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

  1. Fabrication technology for lead-alloy Josephson devices for high-density integrated circuits

    International Nuclear Information System (INIS)

    Imamura, T.; Hoko, H.; Tamura, H.; Yoshida, A.; Suzuki, H.; Morohashi, S.; Ohara, S.; Hasuo, S.; Yamaoka, T.

    1986-01-01

    Fabrication technology for lead-alloy Josephson devices was evaluated from the viewpoint of application to large-scale integrated circuits. Metal and insulating layers used in the circuits were evaluated, and optimization of techniques for deposition or formation of these layers was investigated. Metallization of the Pb-In-Au base electrode and the Pb-Bi counterelectrode was studied in terms of optimizing the deposited films, to improve the reliability of junction electrodes. The formation of the oxide barrier was studied by in situ ellipsometry. SiO/sub x/ deposited in oxygen was developed as the insulation layer with less defect density than conventional SiO. A liftoff technique using toluene soaking was developed, and patterns with a minimum line width of 2 μm were consistently reproduced. The characteristics of each element in the circuits were evaluated for test vehicles. For the junction, the following items were evaluated: controllability of the critical current I/sub c/, junction quality, I/sub c/ uniformity, junction yield, and thermal cycling and storage stability. For the peripheral elements, integrity of lines and contacts, and characteristics of resistors were evaluated. 8-kbit memory cell arrays with a full vertical structure were fabricated to evaluate these technologies in combination. The continuity of each metal layer and insulation between metal layers were evaluated with an autoprober at room temperature. For selected chips, cell characteristics have been measured, and their I/sub c/ uniformity and production yields for cells are discussed. Normal operation of the memory cells was confirmed for all of the 24 accessible cells on a chip

  2. Development of a technology for fabricating low-cost parallel optical interconnects

    Science.gov (United States)

    Van Steenberge, Geert; Hendrickx, Nina; Geerinck, Peter; Bosman, Erwin; Van Put, Steven; Van Daele, Peter

    2006-04-01

    We present a fabrication technology for integrating polymer waveguides and 45° micromirror couplers into standard electrical printed circuit boards (PCBs). The most critical point that is being addressed is the low-cost manufacturing and the compatibility with current PCB production. The latter refers to the processes as well as material compatibility. In the fist part the waveguide fabrication technology is discussed, both photo lithography and laser ablation are proposed. It is shown that a frequency tripled Nd-YAG laser (355 nm) offers a lot of potential for defining single mode interconnections. Emphasis is on multimode waveguides, defined by KrF excimer laser (248 nm) ablation using acrylate polymers. The first conclusion out of loss spectrum measurements is a 'yellowing effect' of laser ablated waveguides, leading to an increased loss at shorter wavelengths. The second important conclusion is a potential low loss at a wavelength of 850 nm, 980 nm and 1310 nm. This is verified at 850 nm by cut-back measurements on 10-cm-long waveguides showing an average propagation loss of 0.13 dB/cm. Photo lithographically defined waveguides using inorganic-organic hybrid polymers show an attenuation loss of 0.15 dB/cm at 850 nm. The generation of debris and the presence of microstructures are two main concerns for KrF excimer laser ablation of hybrid polymers. In the second part a process for embedding metal coated 45° micromirrors in optical waveguiding layers is described. Mirrors are selectively metallized using a lift-off process. Filling up the angled via without the presence of air bubbles and providing a flat surface above the mirror is only possible by enhancing the cladding deposition process with ultrasound agitation. Initial loss measurements indicate an excess mirror loss of 1.5 dB.

  3. Synchrotron radiation studies of inorganic-organic semiconductor interfaces

    International Nuclear Information System (INIS)

    Evans, D.A.; Steiner, H.J.; Vearey-Roberts, A.R.; Bushell, A.; Cabailh, G.; O'Brien, S.; Wells, J.W.; McGovern, I.T.; Dhanak, V.R.; Kampen, T.U.; Zahn, D.R.T.; Batchelor, D.

    2003-01-01

    Organic semiconductors (polymers and small molecules) are widely used in electronic and optoelectronic technologies. Many devices are based on multilayer structures where interfaces play a central role in device performance and where inorganic semiconductor models are inadequate. Synchrotron radiation techniques such as photoelectron spectroscopy (PES), near-edge X-ray absorption fine structure (NEXAFS) and X-ray standing wave spectroscopy (XSW) provide a powerful means of probing the structural, electronic and chemical properties of these interfaces. The surface-specificity of these techniques allows key properties to be monitored as the heterostructure is fabricated. This methodology has been directed at the growth of hybrid organic-inorganic semiconductor interfaces involving copper phthalocyanine as the model organic material and InSb and GaAs as the model inorganic semiconductor substrates. Core level PES has revealed that these interfaces are abrupt and chemically inert due to the weak bonding between the molecules and the inorganic semiconductor. NEXAFS studies have shown that there is a preferred orientation of the molecules within the organic semiconductor layers. The valence band offsets for the heterojunctions have been directly measured using valence level PES and were found to be very different for copper phthalocyanine on InSb and GaAs (0.7 and -0.3 eV respectively) although an interface dipole is present in both cases

  4. Progress in semiconductor laser diodes: SPIE volume 723

    International Nuclear Information System (INIS)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  5. Growth Of Organic Semiconductor Thin Films with Multi-Micron Domain Size and Fabrication of Organic Transistors Using a Stencil Nanosieve.

    Science.gov (United States)

    Fesenko, Pavlo; Flauraud, Valentin; Xie, Shenqi; Kang, Enpu; Uemura, Takafumi; Brugger, Jürgen; Genoe, Jan; Heremans, Paul; Rolin, Cédric

    2017-07-19

    To grow small molecule semiconductor thin films with domain size larger than modern-day device sizes, we evaporate the material through a dense array of small apertures, called a stencil nanosieve. The aperture size of 0.5 μm results in low nucleation density, whereas the aperture-to-aperture distance of 0.5 μm provides sufficient crosstalk between neighboring apertures through the diffusion of adsorbed molecules. By integrating the nanosieve in the channel area of a thin-film transistor mask, we show a route for patterning both the organic semiconductor and the metal contacts of thin-film transistors using one mask only and without mask realignment.

  6. Fabrication of polymer micro-lens array with pneumatically diaphragm-driven drop-on-demand inkjet technology.

    Science.gov (United States)

    Xie, Dan; Zhang, Honghai; Shu, Xiayun; Xiao, Junfeng

    2012-07-02

    The paper reports an effective method to fabricate micro-lens arrays with the ultraviolet-curable polymer, using an original pneumatically diaphragm-driven drop-on-demand inkjet system. An array of plano convex micro-lenses can be formed on the glass substrate due to surface tension and hydrophobic effect. The micro-lens arrays have uniform focusing function, smooth and real planar surface. The fabrication process showed good repeatability as well, fifty micro-lenses randomly selected form 9 × 9 miro-lens array with an average diameter of 333.28μm showed 1.1% variations. Also, the focal length, the surface roughness and optical property of the fabricated micro-lenses are measured, analyzed and proved satisfactory. The technique shows great potential for fabricating polymer micro-lens arrays with high flexibility, simple technological process and low production cost.

  7. Development of a hybrid scaffold with synthetic biomaterials and hydrogel using solid freeform fabrication technology

    International Nuclear Information System (INIS)

    Shim, Jin-Hyung; Park, Min; Park, Jaesung; Cho, Dong-Woo; Kim, Jong Young

    2011-01-01

    Natural biomaterials such as hyaluronic acid, gelatin and collagen provide excellent environments for tissue regeneration. Furthermore, gel-state natural biomaterials are advantageous for encapsulating cells and growth factors. In cell printing technology, hydrogel which contains cells was printed directly to form three-dimensional (3D) structures for tissue or organ regeneration using various types of printers. However, maintaining the 3D shape of the printed structure, which is made only of the hydrogel, is very difficult due to its weak mechanical properties. In this study, we developed a hybrid scaffold consisting of synthetic biomaterials and natural hydrogel using a multi-head deposition system, which is useful in solid freeform fabrication technology. The hydrogel was intentionally infused into the space between the lines of a synthetic biomaterial-based scaffold. The cellular efficacy of the hybrid scaffold was validated using rat primary hepatocytes and a mouse pre-osteoblast MC3T3-E1 cell line. In addition, the collagen hydrogel, which encapsulates cells, was dispensed and the viability of the cells observed. We demonstrated superior effects of the hybrid scaffold on cell adhesion and proliferation and showed the high viability of dispensed cells.

  8. Fabrication of Metallic Hollow Nanoparticles

    Science.gov (United States)

    Kim, Jae-Woo (Inventor); Choi, Sr., Sang H. (Inventor); Lillehei, Peter T. (Inventor); Chu, Sang-Hyon (Inventor); Park, Yeonjoon (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2016-01-01

    Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH.sub.4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.

  9. MicroElectroMechanical devices and fabrication technologies for radio-frequency analog signal processing

    Science.gov (United States)

    Young, Darrin Jun

    The proliferation of wireless services creates a pressing need for compact and low cost RF transceivers. Modern sub-micron technologies provide the active components needed for miniaturization but fail to deliver high quality passives needed in oscillators and filters. This dissertation demonstrates procedures for adding high quality inductors and tunable capacitors to a standard silicon integrated circuits. Several voltage-controlled oscillators operating in the low Giga-Hertz range demonstrate the suitability of these components for high performance RF building blocks. Two low-temperature processes are described to add inductors and capacitors to silicon ICs. A 3-D coil geometry is used for the inductors rather than the conventional planar spiral to substantially reduce substrate loss and hence improve the quality factor and self-resonant frequency. Measured Q-factors at 1 GHz are 30 for a 4.8 nH device, 16 for 8.2 nH and 13.8 nH inductors. Several enhancements are proposed that are expected to result in a further improvement of the achievable Q-factor. This research investigates the design and fabrication of silicon-based IC-compatible high-Q tunable capacitors and inductors. The goal of this investigation is to develop a monolithic low phase noise radio-frequency voltage-controlled oscillator using these high-performance passive components for wireless communication applications. Monolithic VCOs will help the miniaturization of current radio transceivers, which offers a potential solution to achieve a single hand-held wireless phone with multistandard capabilities. IC-compatible micromachining fabrication technologies have been developed to realize on-chip high-Q RF tunable capacitors and 3-D coil inductors. The capacitors achieve a nominal capacitance value of 2 pF and can be tuned over 15% with 3 V. A quality factor over 60 has been measured at 1 GHz. 3-D coil inductors obtain values of 4.8 nH, 8.2 nH and 13.8 nH. At 1 GHz a Q factor of 30 has been achieved

  10. Continuously graded extruded polymer composites for energetic applications fabricated using twin-screw extrusion processing technology

    Science.gov (United States)

    Gallant, Frederick M.

    A novel method of fabricating functionally graded extruded composite materials is proposed for propellant applications using the technology of continuous processing with a Twin-Screw Extruder. The method is applied to the manufacturing of grains for solid rocket motors in an end-burning configuration with an axial gradient in ammonium perchlorate volume fraction and relative coarse/fine particle size distributions. The fabrication of functionally graded extruded polymer composites with either inert or energetic ingredients has yet to be investigated. The lack of knowledge concerning the processing of these novel materials has necessitated that a number of research issues be addressed. Of primary concern is characterizing and modeling the relationship between the extruder screw geometry, transient processing conditions, and the gradient architecture that evolves in the extruder. Recent interpretations of the Residence Time Distributions (RTDs) and Residence Volume Distributions (RVDs) for polymer composites in the TSE are used to develop new process models for predicting gradient architectures in the direction of extrusion. An approach is developed for characterizing the sections of the extrudate using optical, mechanical, and compositional analysis to determine the gradient architectures. The effects of processing on the burning rate properties of extruded energetic polymer composites are characterized for homogeneous formulations over a range of compositions to determine realistic gradient architectures for solid rocket motor applications. The new process models and burning rate properties that have been characterized in this research effort will be the basis for an inverse design procedure that is capable of determining gradient architectures for grains in solid rocket motors that possess tailored burning rate distributions that conform to user-defined performance specifications.

  11. Fabrication of Nanostructured Poly-ε-caprolactone 3D Scaffolds for 3D Cell Culture Technology

    KAUST Repository

    Schipani, Rossana

    2015-04-21

    Tissue engineering is receiving tremendous attention due to the necessity to overcome the limitations related to injured or diseased tissues or organs. It is the perfect combination of cells and biomimetic-engineered materials. With the appropriate biochemical factors, it is possible to develop new effective bio-devices that are capable to improve or replace biological functions. Latest developments in microfabrication methods, employing mostly synthetic biomaterials, allow the production of three-dimensional (3D) scaffolds that are able to direct cell-to-cell interactions and specific cellular functions in order to drive tissue regeneration or cell transplantation. The presented work offers a rapid and efficient method of 3D scaffolds fabrication by using optical lithography and micro-molding techniques. Bioresorbable polymer poly-ε-caprolactone (PCL) was the material used thanks to its high biocompatibility and ability to naturally degrade in tissues. 3D PCL substrates show a particular combination in the designed length scale: cylindrical shaped pillars with 10μm diameter, 10μm height, arranged in a hexagonal lattice with spacing of 20μm were obtained. The sidewalls of the pillars were nanostructured by attributing a 3D architecture to the scaffold. The suitability of these devices as cell culture technology supports was evaluated by plating NIH/3T3 mouse embryonic fibroblasts and human Neural Stem Cells (hNSC) on them. Scanning Electron Microscopy (SEM) analysis was carried out in order to examine the micro- and nano-patterns on the surface of the supports. In addition, after seeding of cells, SEM and immunofluorescence characterization of the fabricated systems were performed to check adhesion, growth and proliferation. It was observed that cells grow and develop healthy on the bio-polymeric devices by giving rise to well-interconnected networks. 3D PCL nano-patterned pillared scaffold therefore may have considerable potential as effective tool for

  12. Remote mixed oxide fabrication facility development. Volume 2. State-of-the-art review of remote maintenance system technology

    International Nuclear Information System (INIS)

    Horgos, R.M.; Masch, M.L.

    1979-06-01

    This report provides a state-of-the-art review of remote systems technology, which includes manipulators, process connectors, vision systems and specialized process systems. A proposed mixed oxide fuel fabrication facility was reviewed and evaluated for identification of major remote maintenance and repair tasks. The technological areas were evaluated on the basis of their suitability or applicability for remote maintenance and repair of a proposed fully remote operating mixed oxide fuel fabrication facility. A technological base exists from which the design criteria for a reliable, remote operating facility can be established. Commercially available systems and components, along with those remote technologies now in development, will require modifications to adapt them to specific plant designs and requirements

  13. Technology, safety and costs of decommissioning a reference small mixed oxide fuel fabrication plant. Volume 1. Main report

    Energy Technology Data Exchange (ETDEWEB)

    Jenkins, C. E.; Murphy, E. S.; Schneider, K J

    1979-01-01

    Detailed technology, safety and cost information are presented for the conceptual decommissioning of a reference small mixed oxide fuel fabrication plant. Alternate methods of decommissioning are described including immediate dismantlement, safe storage for a period of time followed by dismantlement and entombment. Safety analyses, both occupational and public, and cost evaluations were conducted for each mode.

  14. A biomimetic multilayer nanofiber fabric fabricated by electrospinning and textile technology from polylactic acid and Tussah silk fibroin as a scaffold for bone tissue engineering

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Weili [Key Laboratory of Advanced Textile Composites, Ministry of Education, Institute of Textile Composites, Tianjin Polytechnic University, Tianjin 300387 (China); Henan provincial key laboratory of functional textile materials, Zhongyuan University of Technology, Zhengzhou 450007 (China); Collaborative Innovation Center of Textile and Garment Industry, Henan Province, Zhengzhou 450007 (China); He, Jianxin, E-mail: hejianxin771117@163.com [Henan provincial key laboratory of functional textile materials, Zhongyuan University of Technology, Zhengzhou 450007 (China); Collaborative Innovation Center of Textile and Garment Industry, Henan Province, Zhengzhou 450007 (China); Han, Qiming [Henan provincial key laboratory of functional textile materials, Zhongyuan University of Technology, Zhengzhou 450007 (China); Collaborative Innovation Center of Textile and Garment Industry, Henan Province, Zhengzhou 450007 (China); Sang, Feng [Department of Acquired Immune Deficiency Syndrome Treatment and Research Center, The First Affiliated Hospital of Henan University of Traditional Chinese Medicine, Zhengzhou 450000 (China); Wang, Qian [Henan provincial key laboratory of functional textile materials, Zhongyuan University of Technology, Zhengzhou 450007 (China); Collaborative Innovation Center of Textile and Garment Industry, Henan Province, Zhengzhou 450007 (China); Chen, Li [Key Laboratory of Advanced Textile Composites, Ministry of Education, Institute of Textile Composites, Tianjin Polytechnic University, Tianjin 300387 (China); Cui, Shizhong [Key Laboratory of Advanced Textile Composites, Ministry of Education, Institute of Textile Composites, Tianjin Polytechnic University, Tianjin 300387 (China); Henan provincial key laboratory of functional textile materials, Zhongyuan University of Technology, Zhengzhou 450007 (China); Collaborative Innovation Center of Textile and Garment Industry, Henan Province, Zhengzhou 450007 (China); and others

    2016-10-01

    To engineer bone tissue, a scaffold with good biological properties should be provided to approximate the hierarchical structure of collagen fibrils in natural bone. In this study, we fabricated a novel scaffold consisting of multilayer nanofiber fabrics (MLNFFs) by weaving nanofiber yarns of polylactic acid (PLA) and Tussah silk fibroin (TSF). The yarns were fabricated by electrospinning, and we found that spinnability, as well as the mechanical properties of the resulting scaffold, was determined by the ratio between polylactic acid and Tussah silk fibroin. In particular, a 9:1 mixture can be spun continuously into nanofiber yarns with narrow diameter distribution and good mechanical properties. Accordingly, woven scaffolds based on this mixture had excellent mechanical properties, with Young's modulus 417.65 MPa and tensile strength 180.36 MPa. For nonwoven scaffolds fabricated from the same materials, the Young's modulus and tensile strength were 2- and 4-fold lower, respectively. Woven scaffolds also supported adhesion and proliferation of mouse mesenchymal stem cells, and promoted biomineralization via alkaline phosphatase and mineral deposition. Finally, the scaffolds significantly enhanced the formation of new bone in damaged femoral condyle in rabbits. Thus, the scaffolds are potentially suitable for bone tissue engineering because of biomimetic architecture, excellent mechanical properties, and good biocompatibility. - Highlights: • A novel strategy to mimic the hierarchical collagen fibril in bone is proposed by electrospinning and conventional textile technology. • The tensile strength of the woven scaffold was nearly 4-fold larger than that of nonwoven mats. • The nanofiber woven scaffolds show excellent cytocompatibility and accelerate osteoblast differentiation. • The composite scaffold significantly enhanced formation of new bone in damaged condyles in rabbit femur.

  15. A biomimetic multilayer nanofiber fabric fabricated by electrospinning and textile technology from polylactic acid and Tussah silk fibroin as a scaffold for bone tissue engineering

    International Nuclear Information System (INIS)

    Shao, Weili; He, Jianxin; Han, Qiming; Sang, Feng; Wang, Qian; Chen, Li; Cui, Shizhong

    2016-01-01

    To engineer bone tissue, a scaffold with good biological properties should be provided to approximate the hierarchical structure of collagen fibrils in natural bone. In this study, we fabricated a novel scaffold consisting of multilayer nanofiber fabrics (MLNFFs) by weaving nanofiber yarns of polylactic acid (PLA) and Tussah silk fibroin (TSF). The yarns were fabricated by electrospinning, and we found that spinnability, as well as the mechanical properties of the resulting scaffold, was determined by the ratio between polylactic acid and Tussah silk fibroin. In particular, a 9:1 mixture can be spun continuously into nanofiber yarns with narrow diameter distribution and good mechanical properties. Accordingly, woven scaffolds based on this mixture had excellent mechanical properties, with Young's modulus 417.65 MPa and tensile strength 180.36 MPa. For nonwoven scaffolds fabricated from the same materials, the Young's modulus and tensile strength were 2- and 4-fold lower, respectively. Woven scaffolds also supported adhesion and proliferation of mouse mesenchymal stem cells, and promoted biomineralization via alkaline phosphatase and mineral deposition. Finally, the scaffolds significantly enhanced the formation of new bone in damaged femoral condyle in rabbits. Thus, the scaffolds are potentially suitable for bone tissue engineering because of biomimetic architecture, excellent mechanical properties, and good biocompatibility. - Highlights: • A novel strategy to mimic the hierarchical collagen fibril in bone is proposed by electrospinning and conventional textile technology. • The tensile strength of the woven scaffold was nearly 4-fold larger than that of nonwoven mats. • The nanofiber woven scaffolds show excellent cytocompatibility and accelerate osteoblast differentiation. • The composite scaffold significantly enhanced formation of new bone in damaged condyles in rabbit femur.

  16. Fabrication of Semiconducting Methylammonium Lead Halide Perovskite Particles by Spray Technology

    Science.gov (United States)

    Ahmadian-Yazdi, Mohammad-Reza; Eslamian, Morteza

    2018-01-01

    In this "nano idea" paper, three concepts for the preparation of methylammonium lead halide perovskite particles are proposed, discussed, and tested. The first idea is based on the wet chemistry preparation of the perovskite particles, through the addition of the perovskite precursor solution to an anti-solvent to facilitate the precipitation of the perovskite particles in the solution. The second idea is based on the milling of a blend of the perovskite precursors in the dry form, in order to allow for the conversion of the precursors to the perovskite particles. The third idea is based on the atomization of the perovskite solution by a spray nozzle, introducing the spray droplets into a hot wall reactor, so as to prepare perovskite particles, using the droplet-to-particle spray approach (spray pyrolysis). Preliminary results show that the spray technology is the most successful method for the preparation of impurity-free perovskite particles and perovskite paste to deposit perovskite thin films. As a proof of concept, a perovskite solar cell with the paste prepared by the sprayed perovskite powder was successfully fabricated.

  17. Fabrication of Semiconducting Methylammonium Lead Halide Perovskite Particles by Spray Technology.

    Science.gov (United States)

    Ahmadian-Yazdi, Mohammad-Reza; Eslamian, Morteza

    2018-01-10

    In this "nano idea" paper, three concepts for the preparation of methylammonium lead halide perovskite particles are proposed, discussed, and tested. The first idea is based on the wet chemistry preparation of the perovskite particles, through the addition of the perovskite precursor solution to an anti-solvent to facilitate the precipitation of the perovskite particles in the solution. The second idea is based on the milling of a blend of the perovskite precursors in the dry form, in order to allow for the conversion of the precursors to the perovskite particles. The third idea is based on the atomization of the perovskite solution by a spray nozzle, introducing the spray droplets into a hot wall reactor, so as to prepare perovskite particles, using the droplet-to-particle spray approach (spray pyrolysis). Preliminary results show that the spray technology is the most successful method for the preparation of impurity-free perovskite particles and perovskite paste to deposit perovskite thin films. As a proof of concept, a perovskite solar cell with the paste prepared by the sprayed perovskite powder was successfully fabricated.

  18. U.S. technology for mechanized/automated fabrication of fast reactor fuel

    International Nuclear Information System (INIS)

    Nyman, D.H.; Bennett, D.W.; Claudson, T.T.; Dahl, R.E.; Graham, R.A.; Keating, J.J.; Yatabe, J.M.

    1978-01-01

    The status of the U.S. fast reactor Fuel Fabrication Development Program is discussed. The objectives of the program are to develop and evaluate a high throughput pilot fuel fabrication line including close-coupled chemistry and wet scrap recycle operations. The goals of the program are to demonstrate by mechanized/automated and remote processes: reduced personnel exposure, enhanced safegurads/accountability, improved fuel performance, representative fabrication rates and reduced fuel costs

  19. Industrial science and technology research and development project of university cooperative type in fiscal 2000. Report on achievements in semiconductor device manufacturing processes using Cat-CVD method (Development of technology to rationalize energy usage); 2000 nendo daigaku renkeigata sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The catalytic chemical vapor deposition (Cat-CVD) method is a low-temperature thin film depositing technology that can achieve improvement in quality of semiconductor thin films and can perform inexpensive film deposition in a large area. This paper summarizes the achievements in fiscal 2000 in the demonstrative research and development theme of the present project, centering on the following five areas: 1) discussions on application of the Cat-CVD method to the mass production process for gallium arsenide integrated circuits, 2) studies on the possibility to apply the Cat-CVD method to the process to fabricate nitrided silicon protective film for ferroelectric memory devices, 3) formation of nitrided silicon films for silicon integrated circuits by means of the Cat-CVD method, and development of a chamber cleaning technology, 4) fabrication of high-mobility poly-crystalline silicon thin film transistors formed by using the Cat-CVD method and large particle size poly-crystalline silicon films by using the catalytic chemical sputtering process, and 5) discussions on properties of amorphous silicon thin film transistors formed by using the Cat-CVD method and formation of large area films by using a catalyst integrated shower head. (NEDO)

  20. Photolithography and Micro-Fabrication/ Packaging Laboratories

    Data.gov (United States)

    Federal Laboratory Consortium — The Photolithography and Micro-Fabrication/Packaging laboratories provide research level semiconductor processing equipment and facilities that do not require a full...

  1. Real-time two-dimensional imaging of potassium ion distribution using an ion semiconductor sensor with charged coupled device technology.

    Science.gov (United States)

    Hattori, Toshiaki; Masaki, Yoshitomo; Atsumi, Kazuya; Kato, Ryo; Sawada, Kazuaki

    2010-01-01

    Two-dimensional real-time observation of potassium ion distributions was achieved using an ion imaging device based on charge-coupled device (CCD) and metal-oxide semiconductor technologies, and an ion selective membrane. The CCD potassium ion image sensor was equipped with an array of 32 × 32 pixels (1024 pixels). It could record five frames per second with an area of 4.16 × 4.16 mm(2). Potassium ion images were produced instantly. The leaching of potassium ion from a 3.3 M KCl Ag/AgCl reference electrode was dynamically monitored in aqueous solution. The potassium ion selective membrane on the semiconductor consisted of plasticized poly(vinyl chloride) (PVC) with bis(benzo-15-crown-5). The addition of a polyhedral oligomeric silsesquioxane to the plasticized PVC membrane greatly improved adhesion of the membrane onto Si(3)N(4) of the semiconductor surface, and the potential response was stabilized. The potential response was linear from 10(-2) to 10(-5) M logarithmic concentration of potassium ion. The selectivity coefficients were K(K(+),Li(+))(pot) = 10(-2.85), K(K(+),Na(+))(pot) = 10(-2.30), K(K(+),Rb(+))(pot) =10(-1.16), and K(K(+),Cs(+))(pot) = 10(-2.05).

  2. Establishment of design and fabrication technology and domestic qualification for ITER blanket system

    International Nuclear Information System (INIS)

    Hong, Bong Guen; In, S. R.; Bae, Y. D.

    2006-02-01

    To obtain and analyze the detailed design and manufacturing technology of the blanket system for each components, the related data are collected through the various sources. And also, design processes and results of the FWs, shield blocks, and TBMs are investigated. From these analysis of the blanket R and D status of each party, we develop the KO R and D plan and it is used in the selection of manufacturing method and the materials. For the ITA16-10 subtask1, we had the official agreement with ITER IT in December 2004 for the qualification of the FW panel fabrication methods and to establish the NDT methods for the FW panel. From the technical reports we published, we compare the manufacturing methods and the proposed material for each component according to the parties. Be is proposed as a plasma facing material and most parties have interest in S-65C. Cu alloy is proposed as a heat sink material and DSCu or CuCrZr are investigated now. For the structural material, stainless steel such as SS316L(N) is investigated internationally. HIP and brazing are proposed as the manufacturing methods. In order to establish the blanket system technology, design contents of shield block by ITER IT and other parties were investigated through participating the international workshop and meeting, dispatching the researcher to the ITER IT or other parties to collect the drafting and 3D modeling files. The modification items of blanket design were investigated and a researcher was dispatched in the ITER IT and participated in the analysis on cooling problem in shield block such as front header and drilled manifold. To investigate the development status of TBM, we participated the 14th TBWG meeting and proposed the KO HCSB and HCML as candidates. And also, we obtain the R and D results of other parties and make document about the R and D status of other parties for the TBM. Finally, we establish the KO TBM R and D plan and proposed it to ITER IT and other parties. In which, the

  3. Establishment of design and fabrication technology and domestic qualification for ITER blanket system

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Bong Guen; In, S. R.; Bae, Y. D. (and others)

    2006-02-15

    To obtain and analyze the detailed design and manufacturing technology of the blanket system for each components, the related data are collected through the various sources. And also, design processes and results of the FWs, shield blocks, and TBMs are investigated. From these analysis of the blanket R and D status of each party, we develop the KO R and D plan and it is used in the selection of manufacturing method and the materials. For the ITA16-10 subtask1, we had the official agreement with ITER IT in December 2004 for the qualification of the FW panel fabrication methods and to establish the NDT methods for the FW panel. From the technical reports we published, we compare the manufacturing methods and the proposed material for each component according to the parties. Be is proposed as a plasma facing material and most parties have interest in S-65C. Cu alloy is proposed as a heat sink material and DSCu or CuCrZr are investigated now. For the structural material, stainless steel such as SS316L(N) is investigated internationally. HIP and brazing are proposed as the manufacturing methods. In order to establish the blanket system technology, design contents of shield block by ITER IT and other parties were investigated through participating the international workshop and meeting, dispatching the researcher to the ITER IT or other parties to collect the drafting and 3D modeling files. The modification items of blanket design were investigated and a researcher was dispatched in the ITER IT and participated in the analysis on cooling problem in shield block such as front header and drilled manifold. To investigate the development status of TBM, we participated the 14th TBWG meeting and proposed the KO HCSB and HCML as candidates. And also, we obtain the R and D results of other parties and make document about the R and D status of other parties for the TBM. Finally, we establish the KO TBM R and D plan and proposed it to ITER IT and other parties. In which, the

  4. Development of advanced fabrication technology for high-temperature gas-cooled reactor fuel. Reduction of coating failure fraction

    International Nuclear Information System (INIS)

    Minato, Kazuo; Kikuchi, Hironobu; Fukuda, Kousaku; Tobita, Tsutomu; Yoshimuta, Sigeharu; Suzuki, Nobuyuki; Tomimoto, Hiroshi; Nishimura, Kazuhisa; Oda, Takafumi

    1998-11-01

    The advanced fabrication technology for high-temperature gas-cooled reactor fuel has been developed to reduce the coating failure fraction of the fuel particles, which leads to an improvement of the reactor safety. The present report reviews the results of the relevant work. The mechanisms of the coating failure of the fuel particles during coating and compaction processes of the fuel fabrication were studied to determine a way to reduce the coating failure fraction of the fuel. The coating process was improved by optimizing the mode of the particle fluidization and by developing the process without unloading and loading of the particles at intermediate coating process. The compaction process was improved by optimizing the combination of the pressing temperature and the pressing speed of the overcoated particles. Through these modifications of the fabrication process, the quality of the fuel was improved outstandingly. (author)

  5. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  6. Residual Strength Characterization of Unitized Structures Fabricated Using Different Manufacturing Technologies

    Science.gov (United States)

    Seshadri, B. R.; Smith, S. W.; Johnston, W. M.

    2008-01-01

    This viewgraph presentation describes residual strength analysis of integral structures fabricated using different manufacturing procedures. The topics include: 1) Built-up and Integral Structures; 2) Development of Prediction Methodology for Integral Structures Fabricated using different Manufacturing Procedures; 3) Testing Facility; 4) Fracture Parameters Definition; 5) Crack Branching in Integral Structures; 6) Results and Discussion; and 7) Concluding Remarks.

  7. Automation and Integration in Semiconductor Manufacturing

    OpenAIRE

    Liao, Da-Yin

    2010-01-01

    Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

  8. Microcavity Plasma Devices and Arrays Fabricated in Semiconductor, Ceramic, or Metal/polymer Structures: A New Realm of Plasma Physics and Photonics Applications

    International Nuclear Information System (INIS)

    Eden, J. G.

    2005-01-01

    Micro discharge, or microcavity plasma, is the broad term that has come to be associated with an emerging class of glow discharge devices in which the characteristic spatial dimension of the plasma is nominally ) dia. Si wafers and operated in the rare gases and Ar/N2 gas mixtures. Also, photodetection in the ultraviolet, visible and near-infrared with microplasma devices has been observed by interfacing a low temperature plasma with a semiconductor. Carbon nanotubes grown directly within the microcavity of microplasma devices improve all key performance parameters of the device, and nanoporous Al2O3 grown onto Al by wet chemical processing yields microplasma devices of exceptional stability and lifetime. The opportunities such structures offer for accessing new avenues in plasma physics and photonics will be discussed. (Author)

  9. Improved microwave shielding behavior of carbon nanotube-coated PET fabric using plasma technology

    Energy Technology Data Exchange (ETDEWEB)

    Haji, Aminoddin, E-mail: Ahaji@iaubir.ac.ir [Department of Textile Engineering, Birjand Branch, Islamic Azad University, Birjand (Iran, Islamic Republic of); Semnani Rahbar, Ruhollah [Department of Textile and Leather, Faculty of Chemistry and Petrochemical Engineering, Standard Research Institute, Karaj (Iran, Islamic Republic of); Mousavi Shoushtari, Ahmad [Textile Engineering Department, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of)

    2014-08-30

    Four different procedures were conducted to load amine functionalized multiwall carbon nanotube (NH{sub 2}-MWCNT) onto poly (ethylene terephthalate) (PET) fabric surface to obtain a microwave shielding sample. Plasma treated fabric which was subsequently coated with NH{sub 2}-MWCNT in the presence of acrylic acid was chosen as the best sample. Surface changes in the PET fabrics were investigated by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Wide-angle X-ray diffraction was used to study the crystalline structure of the PET fabric. The microwave shielding performance of the PET fabrics in term of reflection loss was determined using a network analyzer at X-band (8.2–12.4 GHz). The XPS results revealed that the carbon atomic percentage decreased while the oxygen atomic percentage increased when the fabric was plasma treated and coated with NH{sub 2}-MWCNT. The SEM images showed that the NH{sub 2}-MWCNTs were homogenously dispersed and individually separated in the surface of fabric. Moreover, the structural studies showed that the crystalline region of the fabrics was not affected by NH{sub 2}-MWCNT and plasma treatment. The best microwave absorbing properties were obtained from the plasma treated fabric which was then coated with 10% NH{sub 2}-MWCNT in the presence of acrylic acid. It showed a minimum reflection loss of ∼−18.2 dB about 11 GHz. Proper attachments of NH{sub 2}-MWCNT on the PET fabric surface was explained in the suggested mechanism in which hydrogen bonding and amide linkage are responsible for the achievement of microwave shielding properties with high durability.

  10. Improved microwave shielding behavior of carbon nanotube-coated PET fabric using plasma technology

    International Nuclear Information System (INIS)

    Haji, Aminoddin; Semnani Rahbar, Ruhollah; Mousavi Shoushtari, Ahmad

    2014-01-01

    Four different procedures were conducted to load amine functionalized multiwall carbon nanotube (NH 2 -MWCNT) onto poly (ethylene terephthalate) (PET) fabric surface to obtain a microwave shielding sample. Plasma treated fabric which was subsequently coated with NH 2 -MWCNT in the presence of acrylic acid was chosen as the best sample. Surface changes in the PET fabrics were investigated by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Wide-angle X-ray diffraction was used to study the crystalline structure of the PET fabric. The microwave shielding performance of the PET fabrics in term of reflection loss was determined using a network analyzer at X-band (8.2–12.4 GHz). The XPS results revealed that the carbon atomic percentage decreased while the oxygen atomic percentage increased when the fabric was plasma treated and coated with NH 2 -MWCNT. The SEM images showed that the NH 2 -MWCNTs were homogenously dispersed and individually separated in the surface of fabric. Moreover, the structural studies showed that the crystalline region of the fabrics was not affected by NH 2 -MWCNT and plasma treatment. The best microwave absorbing properties were obtained from the plasma treated fabric which was then coated with 10% NH 2 -MWCNT in the presence of acrylic acid. It showed a minimum reflection loss of ∼−18.2 dB about 11 GHz. Proper attachments of NH 2 -MWCNT on the PET fabric surface was explained in the suggested mechanism in which hydrogen bonding and amide linkage are responsible for the achievement of microwave shielding properties with high durability

  11. Digital fabrication as an instructional technology for supporting upper elementary and middle school science and mathematics education

    Science.gov (United States)

    Tillman, Daniel

    The purpose of this three-paper manuscript dissertation was to study digital fabrication as an instructional technology for supporting elementary and middle school science and mathematics education. Article one analyzed the effects of digital fabrication activities that were designed to contextualize mathematics education at a summer mathematics enrichment program for upper elementary and middle school students. The primary dependent variables studied were the participants' knowledge of mathematics and science content, attitudes towards STEM (science, technology, engineering, and mathematics) and STEM-related careers. Based upon the data collected, three results were presented as having justifiable supporting empirical evidence: (1) The digital fabrication activities, combined with the other mathematics activities at the enrichment program, resulted in non-significant overall gains in students' mathematics test scores and attitudes towards STEM. (2) The digital fabrication activities, combined with the other mathematics activities at the enrichment program, resulted in noteworthy gains on the "Probability & Statistics" questions. (3) Some students who did poorly on the scored paper test on mathematics and science content were nonetheless nominated by their teachers as demonstrating meritorious distinction during the digital fabrication activities (termed "Great Thinkers" by the 5th-grade teachers). Article two focused on how an instructional technology course featuring digital fabrication activities impacted (1) preservice elementary teachers' efficacy beliefs about teaching science, and (2) their attitudes and understanding of how to include instructional technology and digital fabrication activities into teaching science. The research design compared two sections of a teaching with technology course featuring digital fabrication activities to another section of the same course that utilized a media cycle framework (Bull & Bell, 2005) that did not feature digital

  12. Technology of substrates for molecular beam homo epitaxy of wide - gap AII-BVI semiconductors and construction of a simplified setup for this process

    International Nuclear Information System (INIS)

    Mycielski, A.; Szadkowski, A.; Kaliszek, W.

    2000-01-01

    The technology of 'epi-ready' substrate plates (for MBE) of the wide gap AII-BVI semiconductor compounds, i. e. - preparation of the ultra pure elements, synthesis of the source material, crystallization by the physical vapour transport technique, cutting of the oriented plates, mechano-chemical polishing and preparation of the 'epi-ready' surface - is described, as well as the construction of a simplified version of the MBE setup for covering the substrate plates with the homoepitaxial layer. The results of the characterization of the substrate crystals and plates are presented. (author)

  13. Establishment of technological basis for fabrication of U-Pu-Zr ternary alloy fuel pins for irradiation tests in Japan

    International Nuclear Information System (INIS)

    Kikuchi, Hironobu; Iwai, Takashi; Nakajima, Kunihisa; Arai, Yasuo; Nakamura, Kinya; Ogata, Takanari

    2011-01-01

    A high-purity Ar gas atmosphere glove box accommodating injection casting and sodium-bonding apparatuses was newly installed in the Plutonium Fuel Research Facility of Oarai Research and Development Center, Japan Atomic Energy Agency, in which several nitride and carbide fuel pins were fabricated for irradiation tests. The experiences led to the establishment of the technological basis of the fabrication of U-Pu-Zr alloy fuel pins for the first time in Japan. After the injection casting of the U-Pu-Zr alloy, the metallic fuel pins were fabricated by welding upper and lower end plugs with cladding tubes of ferritic-martensitic steel. Subsequent to the sodium bonding for filling the annular gap region between the U-Pu-Zr alloy and the cladding tube with the melted sodium, the fuel pins for irradiation tests are inspected. This paper shows the apparatuses and the technological basis for the fabrication of U-Pu-Zr alloy fuel pins for the irradiation test planned at the experimental fast test reactor Joyo. (author)

  14. Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

    International Nuclear Information System (INIS)

    Barillaro, G.; Diligenti, A.; Pieri, F.; Fuso, F.; Allegrini, M.

    2001-01-01

    A fabrication process, compatible with an industrial bipolar+complementary metal - oxide - semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n + /p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. [copyright] 2001 American Institute of Physics

  15. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  16. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  17. Application of new technology to the fabrication and installation of stainless steel pipework

    International Nuclear Information System (INIS)

    Halford, P.; Carrick, L.

    1989-01-01

    BNFL has been constructing new reprocessing plant on a continuous basis since the late seventies. Initially the productivity achieved when fabricating and welding stainless steel to nuclear standards was poor. In order to complete projects to programme and cost BNFL developed a Total Fabrication System that is now applied to all of their construction projects and has resulted in overall productivity increases by a factor of 2.4 with major quality and cost benefits. The development of the Total Fabrication System is described

  18. Fabrication of miniaturized electrostatic deflectors using LIGA

    International Nuclear Information System (INIS)

    Jackson, K.H.; Khan-Malek, C.; Muray, L.P.

    1997-01-01

    Miniaturized electron beam columns (open-quotes microcolumnsclose quotes) have been demonstrated to be suitable candidates for scanning electron microscopy (SEM), e-beam lithography and other high resolution, low voltage applications. In the present technology, microcolumns consist of open-quotes selectively scaledclose quotes micro-sized lenses and apertures, fabricated from silicon membranes with e-beam lithography, reactive ion beam etching and other semiconductor thin-film techniques. These miniaturized electron-optical elements provide significant advantages over conventional optics in performance and ease of fabrication. Since lens aberrations scale roughly with size, it is possible to fabricate simple microcolumns with extremely high brightness sources and electrostatic objective lenses, with resolution and beam current comparable to conventional e-beam columns. Moreover since microcolumns typically operate at low voltages (1 KeV), the proximity effects encountered in e-beam lithography become negligible. For high throughput applications, batch fabrication methods may be used to build large parallel arrays of microcolumns. To date, the best reported performance with a 1 keV cold field emission cathode, is 30 nm resolution at a working distance of 2mm in a 3.5mm column. Fabrication of the microcolumn deflector and stigmator, however, have remained beyond the capabilities of conventional machining operations and semiconductor processing technology. This work examines the LIGA process as a superior alternative to fabrication of the deflectors, especially in terms of degree of miniaturization, dimensional control, placement accuracy, run-out, facet smoothness and choice of suitable materials. LIGA is a combination of deep X-ray lithography, electroplating, and injection molding processes which allow the fabrication of microstructures

  19. Development of fabrication technology for copper canisters with cast inserts. Status report in August 2001

    International Nuclear Information System (INIS)

    Andersson, Claes-Goeran

    2002-04-01

    This report contains an account of the results of trial fabrication of copper canisters with cast inserts carried out during the period 1998 - 2001. The work of testing of fabrication methods is being focused on a copper thickness of 50 mm. Occasional canisters with 30 mm copper thickness are being fabricated for the purpose of gaining experience and evaluating fabrication and inspection methods for such canisters. For the fabrication of copper tubes, SKB has concentrated its efforts on seamless tubes made by extrusion and pierce and draw processing. Five tubes have been extruded and two have been pierced and drawn during the period. Materials testing has shown that the resultant structure and mechanical properties of these tubes are good. Despite certain problems with dimensional accuracy, it can be concluded that both of these methods can be developed for use in the serial production of SKB' copper tubes. No new trial fabrication with roll forming of copper plate and longitudinal welding has been done. This method is nevertheless regarded as a potential alternative. Copper lids and bottoms are made by forging of continuous-cast bars. The forged blanks are machined to the desired dimensions. Due to the Canister Laboratory's need for lids to develop the technique for sealing welding, a relatively large number of forged blanks have been fabricated. It is noted in the report that the grain size obtained in lids and bottoms is much coarser than in fabricated copper tubes. Development work has been commenced for the purpose of optimizing the forging process. Nine cast inserts have been cast during the three-year period. The results of completed material testing of test pieces taken at different places along the length of the inserts have in several cases shown an unacceptable range of variation in strength properties and structure. In the continued work, insert fabrication will be developed in terms of both casting technique and iron composition. Development work on

  20. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  1. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    International Nuclear Information System (INIS)

    Dehzangi, Arash; Larki, Farhad; Naseri, Mahmud G.; Navasery, Manizheh; Majlis, Burhanuddin Y.; Razip Wee, Mohd F.; Halimah, M.K.; Islam, Md. Shabiul; Md Ali, Sawal H.; Saion, Elias

    2015-01-01

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated

  2. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    Energy Technology Data Exchange (ETDEWEB)

    Dehzangi, Arash, E-mail: arashd53@hotmail.com [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Larki, Farhad [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Naseri, Mahmud G. [Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan (Iran, Islamic Republic of); Navasery, Manizheh [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Majlis, Burhanuddin Y.; Razip Wee, Mohd F. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Halimah, M.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Islam, Md. Shabiul; Md Ali, Sawal H. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Saion, Elias [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2015-04-15

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

  3. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  4. Clinical marginal and internal fit of metal ceramic crowns fabricated with a selective laser melting technology.

    Science.gov (United States)

    Huang, Zhuoli; Zhang, Lu; Zhu, Jingwei; Zhang, Xiuyin

    2015-06-01

    Selective laser melting (SLM) technology has been introduced to fabricate dental restorations. However, the fit of these restorations still needs further study. The purpose of this in vivo investigation was to compare the marginal and internal fit of SLM metal ceramic crowns with 2 lost-wax cast metal ceramic crowns and to evaluate the influence of tooth type on the marginal and internal fit of these crowns. A total of 330 metal ceramic crowns were evaluated. The metal copings were fabricated with SLM Co-Cr, cast Au-Pt, and cast Co-Cr alloy (n=110). The marginal and internal gaps of crowns were recorded by using a replica technique. The anterior and premolar replicas were sectioned 2 times, and molar replicas were sectioned 4 times. The marginal and internal gap width of each cross section was examined by stereomicroscope at ×30 magnification. Two-way analysis of variance was performed to identify the statistical difference among the groups. The marginal fit of the SLM Co-Cr group (75.6 ±32.6 μm) was not different from the cast Au-Pt group (76.8 ±32.1 μm) (P>.05) but was better than the cast Co-Cr group (91.0 ±36.3 μm) (P.05). The mean occlusal gap width of the SLM Co-Cr group (309.8 ±106.6 μm) was significantly higher than that of the cast Au-Pt group (254.6 ±109.6 μm) and the cast Co-Cr group (249.6 ±110.4 μm) (P.05). Also, no significant difference was found in the axial fit among the anterior group (138.3 ±52.5 μm), the premolar group (132.9 ±50.4 μm), and the molar group (134.4 ±52.5 μm) (P>.05). The anterior group (267.6 ±110.2 μm) did not differ from the premolar group (270.2 ±112.8 μm) and the molar group (268.6 ±110.5 μm) in occlusal fit (P>.05). The marginal fit of SLM Co-Cr metal ceramic crowns was similar to that of the cast Au-Pt metal ceramic crowns and was better than that of the cast Co-Cr metal ceramic crowns. The SLM Co-Cr metal ceramic crowns were not significantly different from the 2 cast metal ceramic crowns in axial

  5. p - n junction diodes fabricated from isolated electrospun fibers of (P(NDI2ODT2)) and an inorganic p-doped semiconductor

    Science.gov (United States)

    Rosado, Alexander; Pinto, Nicholas

    2013-03-01

    A simple method to fabricate, under ambient conditions and within seconds, p - n diodes using an individual electrospun poly{[N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}-(P(NDI2ODT2)) fiber and a commercially available p-doped Si/SiO2 substrate is presented. Band bending at the fiber/Si+ interface leads to asymmetric I-V characteristic curves resembling that of a diode. The diode turn-on voltage was in the range 1V and was unaffected via UV light irradiation. The rectification ratio however could be tuned reversibly thereby making this device multifunctional. In addition to being a rectifier, the advantage of our design is the complete exposure of the rectifying junction to the surrounding environment. This has the advantage of making them attractive candidates in the potential fabrication of low power, sensitive and rapid response photo-sensors. NSF

  6. Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

    Science.gov (United States)

    Matsuda, Toshihiro; Hattori, Fumihiro; Iwata, Hideyuki; Ohzone, Takashi

    2018-04-01

    Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n+-Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb3+/Eu3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb4O7 + Eu2O3), [Tb4O7 + Eu2O3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb3+ and Eu3+ ions in the Tb4O7/Eu2O3 layers resulting in EL emission from Tb3+ and Eu3+ intrashell transitions.

  7. Fabrication of Ni-doped BiVO{sub 4} semiconductors with enhanced visible-light photocatalytic performances for wastewater treatment

    Energy Technology Data Exchange (ETDEWEB)

    Regmi, Chhabilal [Department of Environmental and Biochemical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Kshetri, Yuwaraj K. [Department of Advanced Materials Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Kim, Tae-Ho [Division of Mechanics and ICT Convergence Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Pandey, Ramesh Prasad [Institute of Biomolecule Reconstruction, Department of BT-Convergent Pharmaceutical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Ray, Schindra Kumar [Department of Environmental and Biochemical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Lee, Soo Wohn, E-mail: swlee@sunmoon.ac.kr [Department of Environmental and Biochemical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of)

    2017-08-15

    Highlights: • Synthesis of a Ni-doped BiVO{sub 4} semiconductor photocatalyst with reduced band gap energy. • Ni-doped BiVO{sub 4} provided efficient photocatalytic activity for ibuprofen degradation and E. coli and green tide deactivation. • DFT calculation and thermodynamic modeling to understand the underlying mechanism. - Abstract: A visible-light-driven Ni-doped BiVO{sub 4} photocatalyst was synthesized using a microwave hydrothermal method. The nominal Ni doping amount of 1 wt% provided excellent photoactivity for a variety of water pollutants, such as ibuprofen (pharmaceutical), Escherichia coli (bacteria), and green tides (phytoplankton). Each Ni-doped BiVO{sub 4} sample exhibits better performance than pure BiVO{sub 4}. The degradation of ibuprofen reaches 80% within 90 min, the deactivation of Escherichia coli reaches around 92% within 5 h, and the inactivation of green tide (Chlamydomonas pulsatilla) reaches 70% upon 60 min of the visible light irradiation. The first principle calculation and thermodynamic modeling revealed that Ni doping in the vanadium site gives the most stable configuration of the synthesized samples with the formation of an in-gap energy state and oxygen vacancies. The in-gap energy state and the oxygen vacancies serve as an electron-trapping center that decreases the migration time of the photogenerated carrier and increases the separation efficiency of electron-hole pairs, which are responsible for the observed efficient photocatalytic, anti-bacterial and anti-algal activity of the samples. These properties thus suggest potential applications of Ni-doped BiVO{sub 4} as a multifunctional material in the field of wastewater treatment.

  8. Additive manufacturing technology (direct metal laser sintering) as a novel approach to fabricate functionally graded titanium implants: preliminary investigation of fabrication parameters.

    Science.gov (United States)

    Lin, Wei-Shao; Starr, Thomas L; Harris, Bryan T; Zandinejad, Amirali; Morton, Dean

    2013-01-01

    This article describes the preliminary findings of the mechanical properties of functionally graded titanium with controlled distribution of porosity and a reduced Young's modulus on the basis of a computeraided design (CAD) file, using the rapid-prototyping, direct metal laser sintering (DMLS) technique. Sixty specimens of Ti-6Al-4V were created using a DMLS machine (M270) following the standard for tensile testing of metals. One group was fabricated with only 170 W of laser energy to create fully dense specimens (control group). The remaining specimens all featured an outer fully dense "skin" layer and a partially sintered porous inner "core" region. The outer "skin" of each specimen was scanned at 170 W and set at a thickness of 0.35, 1.00, or 1.50 mm for different specimen groups. The inner "core" of each specimen was scanned at a lower laser power (43 or 85 W). The partially sintered core was clearly visible in all specimens, with somewhat greater porosity with the lower laser power. However, the amount of porosity in the core region was not related to the laser power alone; thinner skin layers resulted in higher porosity for the same power values in the core structure. The lowest Young's modulus achieved, 35 GPa, is close to that of bone and was achieved with a laser power of 43 W and a skin thickness of 0.35 mm, producing a core that comprised 74% of the total volume. Additive manufacturing technology may provide an efficient alternative way to fabricate customized dental implants based on a CAD file with a functionally graded structure that may minimize stress shielding and improve the long-term performance of dental implants.

  9. [Effect of fluoride concentration on the corrosion behavior of cobalt-chromium alloy fabricated by two different technology processes].

    Science.gov (United States)

    Qiuxia, Yang; Ying, Yang; Han, Xu; Di, Wu; Ke, Guo

    2016-02-01

    This study aims to determine the effect of fluoride concentration on the corrosion behavior of cobalt-chromium alloy fabricated by two different technology processes in a simulated oral environment. A total of 15 specimens were employed with selective laser melting (SLM) and another 15 for traditional casting (Cast) in cobalt-chromium alloy powders and blocks with the same material composition. The corrosion behavior of the specimens was studied by potentiodynamic polarization test under different oral environments with varying solubilities of fluorine (0, 0.05%, and 0.20% for each) in acid artificial saliva (pH = 5.0). The specimens were soaked in fluorine for 24 h, and the surface microstructure was observed under a field emission scanning electron microscope after immersing the specimens in the test solution at constant temperature. The corrosion potential (Ecorr) value of the cobalt-chromium alloy cast decreased with increasing fluoride concentration in acidic artificial saliva. The Ecorr, Icorr, and Rp values of the cobalt-chromium alloy fabricated by two different technology processes changed significantly when the fluoride concentration was 0.20% (P technology processes exhibited a statistically significant difference. The Icorr value of the cobalt-chromium alloy cast was higher than that in the SLM group cobalt-chromium alloy when the fluoride concentration was 0.20% (P technology processes. The corrosion resistance of the cobalt-chromium alloy cast was worse than that of the SLM group cobalt-chromium alloy when the fluoride concentration was 0.20%.

  10. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  11. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  12. Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field

    International Nuclear Information System (INIS)

    Molina, J.; De La Hidalga, J.; Gutierrez, E.

    2014-01-01

    After fabrication of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices on high-index silicon (114) surfaces, their threshold voltage (Vth) and interface-states density (Dit) characteristics were measured under the influence of an externally applied magnetic field of B = 6 μT at room temperature. The electron flow of the MOSFET's channel presents high anisotropy on Si (114), and this effect is enhanced by using an external magnetic field B, applied parallel to the Si (114) surface but perpendicular to the electron flow direction. This special configuration results in the channel electrons experiencing a Lorentzian force which pushes the electrons closer to the Si (114)-SiO 2 interface and therefore to the special morphology of the Si (114) surface. Interestingly, Dit evaluation of n-type MOSFETs fabricated on Si (114) surfaces shows that the Si (114)-SiO 2 interface is of high quality so that Dit as low as ∼10 10  cm −2 ·eV −1 are obtained for MOSFETs with channels aligned at specific orientations. Additionally, using both a small positive Vds ≤ 100 mV and B = 6 μT, the former Dit is reduced by 35% in MOSFETs whose channels are aligned parallel to row-like nanostructures formed atop Si (114) surfaces (channels having a 90° rotation), whereas Dit is increased by 25% in MOSFETs whose channels are aligned perpendicular to these nanostructures (channels having a 0° rotation). From these results, the special morphology of a high-index Si (114) plane having nanochannels on its surface opens the possibility to reduce the electron-trapping characteristics of MOSFET devices having deep-submicron features and operating at very high frequencies

  13. Evolution of Emergent Technologies for Producing Nonwoven Fabrics for Air Filtration

    Science.gov (United States)

    Ou, Yingjie

    2016-01-01

    Nonwovens is a fast growing industry driven by technological research and development (R&D), and one of the major application areas for nonwovens is air filtration. Research on nonwovens technologies has mainly focused on the science and technology areas, but there is very little published research on technology management issues within the…

  14. Fabrication of flexible thermoelectric microcoolers using planar thin-film technologies

    OpenAIRE

    Gonçalves, L. M.; Rocha, J. G.; Couto, Carlos; Alpuim, P.; Min, Gao; Rowe, D. M.; Correia, J. H.

    2007-01-01

    The present work reports on the fabrication and characterization of a planar Peltier cooler on a flexible substrate. The device was fabricated on a 12 νm thick Kapton(c) polyimide substrate using Bi2Te3 and Sb2Te3 thermoelectric elements deposited by thermal co-evaporation. The cold area of the device is cooled with four thermoelectric junctions, connected in series using metal contacts. Plastic substrates add uncommon mechanical properties to the composite film-substrate and enable integrati...

  15. Fabrication of Nickel Nanotube Using Anodic Oxidation and Electrochemical Deposition Technologies and Its Hydrogen Storage Property

    Directory of Open Access Journals (Sweden)

    Yan Lv

    2016-01-01

    Full Text Available Electrochemical deposition technique was utilized to fabricate nickel nanotubes with the assistance of AAO templates. The topography and element component of the nickel nanotubes were characterized by TEM and EDS. Furthermore, the nickel nanotube was made into microelectrode and its electrochemical hydrogen storage property was studied using cyclic voltammetry. The results showed that the diameter of nickel nanotubes fabricated was around 20–100 mm, and the length of the nanotube could reach micron grade. The nickel nanotubes had hydrogen storage property, and the hydrogen storage performance was higher than that of nickel powder.

  16. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    Science.gov (United States)

    Calvez, S.; Adams, M. J.

    2012-09-01

    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  17. Development of fabrication technology for copper canisters with cast inserts. Status report in August 2001

    Energy Technology Data Exchange (ETDEWEB)

    Andersson, Claes-Goeran

    2002-04-01

    This report contains an account of the results of trial fabrication of copper canisters with cast inserts carried out during the period 1998 - 2001. The work of testing of fabrication methods is being focused on a copper thickness of 50 mm. Occasional canisters with 30 mm copper thickness are being fabricated for the purpose of gaining experience and evaluating fabrication and inspection methods for such canisters. For the fabrication of copper tubes, SKB has concentrated its efforts on seamless tubes made by extrusion and pierce and draw processing. Five tubes have been extruded and two have been pierced and drawn during the period. Materials testing has shown that the resultant structure and mechanical properties of these tubes are good. Despite certain problems with dimensional accuracy, it can be concluded that both of these methods can be developed for use in the serial production of SKB' copper tubes. No new trial fabrication with roll forming of copper plate and longitudinal welding has been done. This method is nevertheless regarded as a potential alternative. Copper lids and bottoms are made by forging of continuous-cast bars. The forged blanks are machined to the desired dimensions. Due to the Canister Laboratory's need for lids to develop the technique for sealing welding, a relatively large number of forged blanks have been fabricated. It is noted in the report that the grain size obtained in lids and bottoms is much coarser than in fabricated copper tubes. Development work has been commenced for the purpose of optimizing the forging process. Nine cast inserts have been cast during the three-year period. The results of completed material testing of test pieces taken at different places along the length of the inserts have in several cases shown an unacceptable range of variation in strength properties and structure. In the continued work, insert fabrication will be developed in terms of both casting technique and iron composition. Development

  18. Fabricating Optical Fiber Imaging Sensors Using Inkjet Printing Technology: a pH Sensor Proof-of-Concept

    Energy Technology Data Exchange (ETDEWEB)

    Carter, J C; Alvis, R M; Brown, S B; Langry, K C; Wilson, T S; McBride, M T; Myrick, M L; Cox, W R; Grove, M E; Colston, B W

    2005-03-01

    We demonstrate the feasibility of using Drop-on-Demand microjet printing technology for fabricating imaging sensors by reproducibly printing an array of photopolymerizable sensing elements, containing a pH sensitive indicator, on the surface of an optical fiber image guide. The reproducibility of the microjet printing process is excellent for microdot (i.e. micron-sized polymer) sensor diameter (92.2 {+-} 2.2 microns), height (35.0 {+-} 1.0 microns), and roundness (0.00072 {+-} 0.00023). pH sensors were evaluated in terms of pH sensing ability ({le}2% sensor variation), response time, and hysteresis using a custom fluorescence imaging system. In addition, the microjet technique has distinct advantages over other fabrication methods, which are discussed in detail.

  19. A laser-based technology for fabricating a soda-lime glass based microfluidic device for circulating tumour cell capture.

    Science.gov (United States)

    Nieto, Daniel; Couceiro, Ramiro; Aymerich, Maria; Lopez-Lopez, Rafael; Abal, Miguel; Flores-Arias, María Teresa

    2015-10-01

    We developed a laser-based technique for fabricating microfluidic microchips on soda-lime glass substrates. The proposed methodology combines a laser direct writing, as a manufacturing tool for the fabrication of the microfluidics structures, followed by a post-thermal treatment with a CO2 laser. This treatment will allow reshaping and improving the morphological (roughness) and optical qualities (transparency) of the generated microfluidics structures. The use of lasers commonly implemented for material processing makes this technique highly competitive when compared with other glass microstructuring approaches. The manufactured chips were tested with tumour cells (Hec 1A) after being functionalized with an epithelial cell adhesion molecule (EpCAM) antibody coating. Cells were successfully arrested on the pillars after being flown through the device giving our technology a translational application in the field of cancer research. Copyright © 2015 Elsevier B.V. All rights reserved.

  20. Are we There Yet? ... Developing In-Situ Fabrication and Repair (ISFR) Technologies to Explore and Live on the Moon and Mars

    Science.gov (United States)

    Bassler, Julie A.; Bodiford, Melanie P.; Fiske, Michael R.; Strong, Janet D.

    2005-01-01

    NASA's human exploration initiative poses great opportunity and great risk for manned missions to the Moon and Mars. Engineers and Scientists at the Marshall Space Flight Center are evaluating current technologies for in situ exploration habitat and fabrication and repair applications. Several technologies to be addressed in this paper have technology readiness levels (TRLs) that are currently mature enough to pursue for exploration purposes. However, many technologies offer promising applications but these must be pulled along by the demands and applications of this great initiative. The In Situ Fabrication and Repair (ISFR) program will supply and push state of the art technologies for applications such as habitat structure development, in situ resource utilization for tool and part fabrication, and repair and replacement of common life support elements. This paper will look at the current and future habitat technology applications such as the implementation of in situ environmental elements such as caves, rilles and lavatubes, the development of lunar regolith concrete and structure design and development, thin film and inflatable technologies. We will address current rapid prototyping technologies, their ISFR applications and near term advancements. We will discuss the anticipated need to utilize in situ resources to produce replacement parts and fabricate repairs to vehicles, habitats, life support and quality of life elements. All ISFR technology developments will incorporate automated deployment and robotic construction and fabrication techniques. The current state of the art for these applications is fascinating, but the future is out of this world.

  1. Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu{sub x}O and HfO{sub 2}/SiO{sub 2} high-{kappa} stack gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Zou Xiao [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Department of Electromachine Engineering, Jianghan University, Wuhan, 430056 (China); Fang Guojia, E-mail: gjfang@whu.edu.c [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Yuan Longyan; Liu Nishuang; Long Hao; Zhao Xingzhong [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China)

    2010-05-31

    Polycrystalline p-type Cu{sub x}O films were deposited after the growth of HfO{sub 2} dielectric on Si substrate by pulsed laser deposition, and Cu{sub x}O metal-oxide-semiconductor (MOS) capacitors with HfO{sub 2}/SiO{sub 2} stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline structure and Cu{sup +}/Cu{sup 2+} ratios of Cu{sub x}O films respectively. SiO{sub 2} interlayer formed between the high-{kappa} dielectric and substrate was estimated by the transmission electron microscope. Results of electrical characteristic measurement indicate that the permittivity of HfO{sub 2} is about 22, and the gate leakage current density of MOS capacitor with 11.3 nm HfO{sub 2}/SiO{sub 2} stack dielectrics is {approx} 10{sup -4} A/cm{sup 2}. Results also show that the annealing in N{sub 2} can improve the quality of Cu{sub x}O/HfO{sub 2} interface and thus reduce the gate leakage density.

  2. Fabrication and characterization of metal-ferroelectric (PbZr0.6Ti0.4O3)-insulator (La2O3)-semiconductor capacitors for nonvolatile memory applications

    Science.gov (United States)

    Juan, Trevor Pi-Chun; Lin, Cheng-Li; Shih, Wen-Chieh; Yang, Chin-Chieh; Lee, Joseph Ya-Min; Shye, Der-Chi; Lu, Jong-Hong

    2009-03-01

    Metal-ferroelectric-insulator-semiconductor thin-film capacitors with Pb(Zr0.6,Ti0.4)O3 (PZT) ferroelectric layer and high-k lanthanum oxide (La2O3) insulator layer were fabricated. The outdiffusion of atoms between La2O3 and silicon was examined by the secondary-ion-mass spectroscopy. The size of memory window as a function of PZT annealing temperature was discussed. The maximum memory window saturated to 0.7 V, which is close to the theoretical memory window ΔW ≈2dfEc≈0.8 V with higher annealing temperatures above 700 °C. The memory window starts to decrease due to charge injection when the sweep voltage is higher than 5 V at 600 °C-annealed samples. The C-V flatband voltage shift (ΔVFB) as a function of charge injection was characterized in this work. An energy band diagram of the Al/PZT//La2O3/p-Si system was proposed to explain the memory window and the flatband voltage shift.

  3. Inertial confinement fusion target component fabrication and technology development support: Annual report, October 1, 1995--September 30, 1996

    International Nuclear Information System (INIS)

    Hoppe, M.

    1997-02-01

    On December 30, 1990, the U.S. Department of Energy entered into a contract with General Atomics (GA) to be the Inertial Confinement Fusion (ICF) Target Component Fabrication and Technology Development Support contractor. In September 1995 this contract ended and a second contract was issued for us to continue this ICF target support work. This report documents the technical activities of the period October 1, 1995 through September 30, 1996. During this period, GA and our partners WJ Schafer Associates (WJSA) and Soane Technologies, Inc. (STI) were assigned 14 formal tasks in support of the Inertial Confinement Fusion program and its five laboratories. A portion of the effort on these tasks included providing direct open-quotes Onsite Supportclose quotes at Lawrence Livermore National Laboratory (LLNL), Los Alamos National Laboratory (LANL), and Sandia National Laboratory Albuquerque (SNLA). We fabricated and delivered over 800 gold-plated hohlraum mandrels to LLNL, LANL and SNLA. We produced nearly 1,200 glass and plastic target capsules for LLNL, LANL, SNLA and University of Rochester/Laboratory for Laser Energetics (UR/LLE). We also delivered over 100 flat foil targets for Naval Research Lab (NRL) and SNLA in FY96. This report describes these target fabrication activities and the target fabrication and characterization development activities that made the deliveries possible. The ICF program is anticipating experiments at the OMEGA laser and the National Ignition Facility (NIF) which will require capsules containing cryogenic layered D 2 or deuterium-tritium (DT) fuel. We are part of the National Cryogenic Target Program to create and demonstrate viable ways to generate and characterize cryogenic layers. Substantial progress has been made on ways to both create and characterize viable layers. During FY96, significant progress was made in the design of the OMEGA Cryogenic Target System that will field cryogenic targets on OMEGA

  4. Recent developments in bio-inspired sensors fabricated by additive manufacturing technologies

    NARCIS (Netherlands)

    Krijnen, Gijsbertus J.M.; Sanders, Remco G.P.

    2017-01-01

    In our work on micro-fabricated hair-sensors, inspired by the flow-sensitive sensors found on crickets, we have made great progress. Initially delivering mediocre performance compared to their natural counter parts they have evolved into capable sensors with thresholds roughly a factor of 30 larger

  5. High performance bidirectional electrostatic inchworm motor fabricated by trench isolation technology

    NARCIS (Netherlands)

    Sarajlic, Edin; Berenschot, Johan W.; Tas, Niels Roelof; Fujita, H.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

    We report on an electrostatic linear micromotor, which employs built-in mechanical leverage to convert normal deflection of a flexible plate into a small in-plane step and two clamps to enable bidirectional inchworm motion. The motor, measuring 412 /spl mu/m /spl times/ 286 /spl mu/m, is fabricated

  6. Fabrication Technological Development of the Oxide Dispersion Strengthened Alloy MA957 for Fast Reactor Applications

    Energy Technology Data Exchange (ETDEWEB)

    Hamilton, Margaret L.; Gelles, David S.; Lobsinger, Ralph J.; Johnson, Gerald D.; Brown, W. F.; Paxton, Michael M.; Puigh, Raymond J.; Eiholzer, Cheryl R.; Martinez, C.; Blotter, M. A.

    2000-02-28

    A significant amount of effort has been devoted to determining the properties and understanding the behavior of the alloy MA957 to define its potential usefulness as a cladding material in the fast breeder reactor program. The numerous characterization and fabrication studies that were conducted are documented in this report.

  7. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  8. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  9. Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

    Directory of Open Access Journals (Sweden)

    Alex Hayat

    2012-12-01

    Full Text Available We report the demonstration of hybrid high-T_{c}-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_{c}-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with graphite or Bi_{2}Te_{3}. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

  10. Emergence of Quantum Phase-Slip Behaviour in Superconducting NbN Nanowires: DC Electrical Transport and Fabrication Technologies

    Directory of Open Access Journals (Sweden)

    Nicolas G. N. Constantino

    2018-06-01

    Full Text Available Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such technologies is to understand the requirements for, and control the production of, superconducting nanowires that undergo coherent quantum phase-slips. We present three fabrication technologies, based on using electron-beam lithography or neon focussed ion-beam lithography, for defining narrow superconducting nanowires, and have used these to create nanowires in niobium nitride with widths in the range of 20–250 nm. We present characterisation of the nanowires using DC electrical transport at temperatures down to 300 mK. We demonstrate that a range of different behaviours may be obtained in different nanowires, including bulk-like superconducting properties with critical-current features, the observation of phase-slip centres and the observation of zero conductance below a critical voltage, characteristic of coherent quantum phase-slips. We observe critical voltages up to 5 mV, an order of magnitude larger than other reports to date. The different prominence of quantum phase-slip effects in the various nanowires may be understood as arising from the differing importance of quantum fluctuations. Control of the nanowire properties will pave the way for routine fabrication of coherent quantum phase-slip nanowire devices for technology applications.

  11. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  12. Optically pumped semiconductor lasers for atomic and molecular physics

    Science.gov (United States)

    Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

    2015-03-01

    Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

  13. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  14. Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

    International Nuclear Information System (INIS)

    Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

    1993-01-01

    Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

  15. Fabrication technology for a series of cylindrical thin-wall cavity targets

    CERN Document Server

    Zheng Yong; Sun Zu Oke; Wang Ming Da; Zhou La; Zhou Zhi Yun

    2002-01-01

    Cylindrical thin-wall cavity targets have been fabricated to study the behavior of superthermal electrons and their effects on inertial confinement fusion (ICF). Self-supporting cavity targets having adjustable, uniform wall thickness, and low surface roughness were required. This required production of high-quality mandrels, coating them by sputtering or electroplating, developing techniques for measurement of wall thickness and other cavity parameters, improving the uniformity of rotation of the mandrels, and preventing damage to the targets during removal from the mandrels. Details of the fabrication process are presented. Experimental results from the use of these targets are presented. These results, in good agreement with simulations, indicate that the use of thin-wall cavity targets is an effective method for studying superthermal electrons in ICF.

  16. Fabrication of three-dimensional freestanding metal micropipes for microfluidics and microreaction technology

    International Nuclear Information System (INIS)

    Lang, P; Neiß, S; Woias, P

    2011-01-01

    In this paper, we describe a simple and novel fabrication process to produce three-dimensional freestanding metal micropipes. This process is based on conventional micromachining and electroless nickel plating inside a microfluidic channel of structured and stacked silicon substrates. The nickel micropipe resists an etching with KOH, which facilitates to fabricate freestanding, functional micropipes. The in-channel electroless plating achieves a continuous and homogeneous deposition of nickel and shows an accurate coating of small microstructures down to 20 µm. Furthermore, the deposited nickel layers possess a high tensile strength for bonding (>200–300 N mm −2 ), are chemically inert against fluorine gas and withstand pressures up to 6 bar. Thermal measurements have shown that released micropipes show better heat flux densities than embedded micropipes with 86% at a cooling flow rate of 16 ml h −1 . Hence, released micropipes feature accurate control of the temperature in the micropipe via a variance of the cooling fluid flow rate.

  17. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  18. Addressing key science and technology issues for IFE chambers, target fabrication and target injection

    International Nuclear Information System (INIS)

    Meier, W.R.; Goodin, D.T.; Nobile, A.

    2003-01-01

    Significant progress has been made in the development of high repetition rate chambers, target fabrication and injection for inertial fusion energy (IFE) for both heavy ion and laser drivers. Research is being conducted in a coordinated manner by national laboratories, universities and industry. This paper provides an overview of U.S. research activities and discusses how interface considerations (such as beam propagation and target survival during injection) impact design choices. (author)

  19. Magnetic resonance imaging-three-dimensional printing technology fabricates customized scaffolds for brain tissue engineering

    Institute of Scientific and Technical Information of China (English)

    Feng Fu; Chong Chen; Sai Zhang; Ming-liang Zhao; Xiao-hong Li; Zhe Qin; Chao Xu; Xu-yi Chen; Rui-xin Li; Li-na Wang; Ding-wei Peng; Hong-tao Sun; Yue Tu

    2017-01-01

    Conventional fabrication methods lack the ability to control both macro- and micro-structures of generated scaffolds. Three-dimensional printing is a solid free-form fabrication method that provides novel ways to create customized scaffolds with high precision and accuracy. In this study, an electrically controlled cortical impactor was used to induce randomized brain tissue defects. The overall shape of scaffolds was designed using rat-specific anatomical data obtained from magnetic resonance imaging, and the internal structure was created by computer- aided design. As the result of limitations arising from insufficient resolution of the manufacturing process, we magnified the size of the cavity model prototype five-fold to successfully fabricate customized collagen-chitosan scaffolds using three-dimensional printing. Results demonstrated that scaffolds have three-dimensional porous structures, high porosity, highly specific surface areas, pore connectivity and good internal characteristics. Neural stem cells co-cultured with scaffolds showed good viability, indicating good biocompatibility and biodegradability. This technique may be a promising new strategy for regenerating complex damaged brain tissues, and helps pave the way toward personalized medicine.

  20. Key Processes of Silicon-On-Glass MEMS Fabrication Technology for Gyroscope Application.

    Science.gov (United States)

    Ma, Zhibo; Wang, Yinan; Shen, Qiang; Zhang, Han; Guo, Xuetao

    2018-04-17

    MEMS fabrication that is based on the silicon-on-glass (SOG) process requires many steps, including patterning, anodic bonding, deep reactive ion etching (DRIE), and chemical mechanical polishing (CMP). The effects of the process parameters of CMP and DRIE are investigated in this study. The process parameters of CMP, such as abrasive size, load pressure, and pH value of SF1 solution are examined to optimize the total thickness variation in the structure and the surface quality. The ratio of etching and passivation cycle time and the process pressure are also adjusted to achieve satisfactory performance during DRIE. The process is optimized to avoid neither the notching nor lag effects on the fabricated silicon structures. For demonstrating the capability of the modified CMP and DRIE processes, a z-axis micro gyroscope is fabricated that is based on the SOG process. Initial test results show that the average surface roughness of silicon is below 1.13 nm and the thickness of the silicon is measured to be 50 μm. All of the structures are well defined without the footing effect by the use of the modified DRIE process. The initial performance test results of the resonant frequency for the drive and sense modes are 4.048 and 4.076 kHz, respectively. The demands for this kind of SOG MEMS device can be fulfilled using the optimized process.

  1. Overview on the welding technologies of CLAM steel and the DFLL TBM fabrication

    Directory of Open Access Journals (Sweden)

    Junyu Zhang

    2016-12-01

    Full Text Available Dual Functional Lithium Lead (DFLL blanket was proposed for its advantages of high energy exchange efficiency and on-line tritium extraction, and it was selected as the candidate test blanket module (TBM for China Fusion Engineering Test Reactor (CFETR and the blanket for Fusion Design Study (FDS series fusion reactors. Considering the influence of high energy fusion neutron irradiation and high heat flux thermal load on the blanket, China Low Activation Martensitic (CLAM steel was selected as the structural material for DFLL blanket. The structure of the blanket and the cooling internal components were pretty complicated. Meanwhile, high precision and reliability were required in the blanket fabrication. Therefore, several welding techniques, such as hot isostatic pressing diffusion bonding, tungsten inner gas welding, electron beam welding and laser beam welding were developed for the fabrication of cooling internals and the assembly of the blanket. In this work, the weldability on CLAM steel by different welding methods and the properties of as-welded and post-weld heat-treated joints were investigated. Meanwhile, the welding schemes and the assembly strategy for TBM fabrication were raised. Many tests and research efforts on scheme feasibility, process standardization, component qualification and blanket assembly were reviewed.

  2. A Brief Description of High Temperature Solid Oxide Fuel Cell’s Operation, Materials, Design, Fabrication Technologies and Performance

    Directory of Open Access Journals (Sweden)

    Muneeb Irshad

    2016-03-01

    Full Text Available Today’s world needs highly efficient systems that can fulfill the growing demand for energy. One of the promising solutions is the fuel cell. Solid oxide fuel cell (SOFC is considered by many developed countries as an alternative solution of energy in near future. A lot of efforts have been made during last decade to make it commercial by reducing its cost and increasing its durability. Different materials, designs and fabrication technologies have been developed and tested to make it more cost effective and stable. This article is focused on the advancements made in the field of high temperature SOFC. High temperature SOFC does not need any precious catalyst for its operation, unlike in other types of fuel cell. Different conventional and innovative materials have been discussed along with properties and effects on the performance of SOFC’s components (electrolyte anode, cathode, interconnect and sealing materials. Advancements made in the field of cell and stack design are also explored along with hurdles coming in their fabrication and performance. This article also gives an overview of methods required for the fabrication of different components of SOFC. The flexibility of SOFC in terms fuel has also been discussed. Performance of the SOFC with varying combination of electrolyte, anode, cathode and fuel is also described in this article.

  3. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  4. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  5. OPENING ADDRESS: Heterostructures in Semiconductors

    Science.gov (United States)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  6. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  7. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  8. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (development of fabrication technology of thin film polycrystalline Si solar cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (usumaku takessho silicon kei taiyo denchi seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of thin film polycrystalline Si solar cells in fiscal 1994. (1) On the fabrication technology of high-quality Si thin films, the new equipment was studied which allows uniform stable melting recrystallization over a large area. The new equipment adopted a heating method based on RTP system, and is now under adjustment. (2) On the fabrication technology of light/carrier confinement structure, degradation of hydrogen-treated thin film Si solar cells by light irradiation was examined. As a result, since any characteristic degradation was not found even by long time light irradiation, the high quality of the cells was confirmed regardless of hydrogen-treatment. Fabrication of stable reproducible fine texture structure became possible by using fabrication technology of light confinement structure by texture treatment of cell surfaces. (3) On low-cost process technology, design by VEST process, estimation of cell characteristics by simulation, and characteristics of prototype cells were reported. 33 figs., 1 tab.

  9. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  10. Metallurgy and purification of semiconductor materials

    International Nuclear Information System (INIS)

    Mughal, G.R.; Ali, M.M.; Ali, I.

    1996-01-01

    In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

  11. Fabrication of corner cube array retro-reflective structure with DLP-based 3D printing technology

    Science.gov (United States)

    Riahi, Mohammadreza

    2016-06-01

    In this article, the fabrication of a corner cube array retro-reflective structure is presented by using DLP-based 3D printing technology. In this additive manufacturing technology a pattern of a cube corner array is designed in a computer and sliced with specific software. The image of each slice is then projected from the bottom side of a reservoir, containing UV cure resin, utilizing a DLP video projector. The projected area is cured and attached to a base plate. This process is repeated until the entire part is made. The best orientation of the printing process and the effect of layer thicknesses on the surface finish of the cube has been investigated. The thermal reflow surface finishing and replication with soft molding has also been presented in this article.

  12. Micromechanical Structures Fabrication; FINAL

    International Nuclear Information System (INIS)

    Rajic, S

    2001-01-01

    Work in materials other than silicon for MEMS applications has typically been restricted to metals and metal oxides instead of more ''exotic'' semiconductors. However, group III-V and II-VI semiconductors form a very important and versatile collection of material and electronic parameters available to the MEMS and MOEMS designer. With these materials, not only are the traditional mechanical material variables (thermal conductivity, thermal expansion, Young's modulus, etc.) available, but also chemical constituents can be varied in ternary and quaternary materials. This flexibility can be extremely important for both friction and chemical compatibility issues for MEMS. In addition, the ability to continually vary the bandgap energy can be particularly useful for many electronics and infrared detection applications. However, there are two major obstacles associated with alternate semiconductor material MEMS. The first issue is the actual fabrication of non-silicon micro-devices and the second impediment is communicating with these novel devices. We have implemented an essentially material independent fabrication method that is amenable to most group III-V and II-VI semiconductors. This technique uses a combination of non-traditional direct write precision fabrication processes such as diamond turning, ion milling, laser ablation, etc. This type of deterministic fabrication approach lends itself to an almost trivial assembly process. We also implemented a mechanical, electrical, and optical self-aligning hybridization technique for these alternate-material MEMS substrates

  13. A programmed release multi-drug implant fabricated by three-dimensional printing technology for bone tuberculosis therapy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Weigang; Zheng Qixin; Guo Xiaodong; Sun Jianhua; Liu Yudong, E-mail: Zheng-qx@163.co [Department of Orthopaedics, Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430022 (China)

    2009-12-15

    In the world, bone tuberculosis is still very difficult to treat and presents a challenge to clinicians. In this study, we utilized 3D printing technology to fabricate a programmed release multi-drug implant for bone tuberculosis therapy. The construction of the drug implant was a multi-layered concentric cylinder divided into four layers from the center to the periphery. Isoniazid and rifampicin were distributed individually into the different layers in a specific sequence of isoniazid-rifampicin-isoniazid-rifampicin. The drug release assays in vitro and in vivo showed that isoniazid and rifampicin were released orderly from the outside to the center to form the multi-drug therapeutic alliance, and the peak concentrations of drugs were detected in sequence at 8 to 12 day intervals. In addition, no negative effect on the proliferation of rabbit bone marrow mesenchymal stem cells was detected during the cytocompatibility assay. Due to its ideal pharmacologic action and cytocompatibility, the programmed release multi-drug implant with a complex construction fabricated by 3D printing technology could be of interest in prevention and treatment of bone tuberculosis.

  14. Assessment of the fit of removable partial denture fabricated by computer-aided designing/computer aided manufacturing technology.

    Science.gov (United States)

    Arafa, Khalid A O

    2018-01-01

    To assess the level of evidence that supports the quality of fit for removable partial denture (RPD) fabricated by computer-aided designing/computer aided manufacturing (CAD/CAM) and rapid prototyping (RP) technology. Methods: An electronic search was performed in Google Scholar, PubMed, and Cochrane library search engines, using Boolean operators. All articles published in English and published in the period from 1950 until April 2017 were eligible to be included in this review. The total number of articles contained the search terms in any part of the article (including titles, abstracts, or article texts) were screened, which resulted in 214 articles. After exclusion of irrelevant and duplicated articles, 12 papers were included in this systematic review.  Results: All the included studies were case reports, except one study, which was a case series that recruited 10 study participants. The visual and tactile examination in the cast or clinically in the patient's mouth was the most-used method for assessment of the fit of RPDs. From all included studies, only one has assessed the internal fit between RPDs and oral tissues using silicone registration material. The vast majority of included studies found that the fit of RPDs ranged from satisfactory to excellent fit. Conclusion: Despite the lack of clinical trials that provide strong evidence, the available evidence supported the claim of good fit of RPDs fabricated by new technologies using CAD/CAM.

  15. A programmed release multi-drug implant fabricated by three-dimensional printing technology for bone tuberculosis therapy

    International Nuclear Information System (INIS)

    Wu Weigang; Zheng Qixin; Guo Xiaodong; Sun Jianhua; Liu Yudong

    2009-01-01

    In the world, bone tuberculosis is still very difficult to treat and presents a challenge to clinicians. In this study, we utilized 3D printing technology to fabricate a programmed release multi-drug implant for bone tuberculosis therapy. The construction of the drug implant was a multi-layered concentric cylinder divided into four layers from the center to the periphery. Isoniazid and rifampicin were distributed individually into the different layers in a specific sequence of isoniazid-rifampicin-isoniazid-rifampicin. The drug release assays in vitro and in vivo showed that isoniazid and rifampicin were released orderly from the outside to the center to form the multi-drug therapeutic alliance, and the peak concentrations of drugs were detected in sequence at 8 to 12 day intervals. In addition, no negative effect on the proliferation of rabbit bone marrow mesenchymal stem cells was detected during the cytocompatibility assay. Due to its ideal pharmacologic action and cytocompatibility, the programmed release multi-drug implant with a complex construction fabricated by 3D printing technology could be of interest in prevention and treatment of bone tuberculosis.

  16. Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

    International Nuclear Information System (INIS)

    Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

    2008-01-01

    Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

  17. Fabrication technological development of the oxide dispersion strengthened alloy MA957 for fast reactor applications

    International Nuclear Information System (INIS)

    ML Hamilton; DS Gelles; RJ Lobsinger; GD Johnson; WF Brown; MM Paxton; RJ Puigh; CR Eiholzer; C Martinez; MA Blotter

    2000-01-01

    A significant amount of effort has been devoted to determining the properties and understanding the behavior of the alloy MA957 to define its potential usefulness as a cladding material, in the fast breeder reactor program. The numerous characterization and fabrication studies that were conducted are documented in this report. The alloy is a ferritic stainless steel developed by International Nickel Company specifically for structural reactor applications. It is strengthened by a very fine, uniformly distributed yttria dispersoid. Its fabrication involves a mechanical alloying process and subsequent extrusion, which ultimately results in a highly elongated grain structure. While the presence of the dispersoid produces a material with excellent strength, the body centered cubic structure inherent to the material coupled with the high aspect ratio that results from processing operations produces some difficulties with ductility. The alloy is very sensitive to variations in a number of processing parameters, and if the high strength is once lost during fabrication, it cannot be recovered. The microstructural evolution of the alloy under irradiation falls into two regimes. Below about 550 C, dislocation development, αprime precipitation and void evolution in the matrix are observed, while above about 550 C damage appears to be restricted to cavity formation within oxide particles. The thermal expansion of the alloy is very similar to that of HT9 up to the temperature where HT9 undergoes a phase transition to austenitic. Pulse magnetic welding of end caps onto MA957 tubing can be accomplished in a manner similar to that in which it is performed on HT9, although the welding parameters appear to be very sensitive to variations in the tubing that result from small changes in fabrication conditions. The tensile and stress rupture behavior of the alloy are acceptable in the unirradiated condition, being comparable to HT9 below about 700 C and exceeding those of HT9 at

  18. Fabrication technological development of the oxide dispersion strengthened alloy MA957 for fast reactor applications

    Energy Technology Data Exchange (ETDEWEB)

    ML Hamilton; DS Gelles; RJ Lobsinger; GD Johnson; WF Brown; MM Paxton; RJ Puigh; CR Eiholzer; C Martinez; MA Blotter

    2000-03-27

    A significant amount of effort has been devoted to determining the properties and understanding the behavior of the alloy MA957 to define its potential usefulness as a cladding material, in the fast breeder reactor program. The numerous characterization and fabrication studies that were conducted are documented in this report. The alloy is a ferritic stainless steel developed by International Nickel Company specifically for structural reactor applications. It is strengthened by a very fine, uniformly distributed yttria dispersoid. Its fabrication involves a mechanical alloying process and subsequent extrusion, which ultimately results in a highly elongated grain structure. While the presence of the dispersoid produces a material with excellent strength, the body centered cubic structure inherent to the material coupled with the high aspect ratio that results from processing operations produces some difficulties with ductility. The alloy is very sensitive to variations in a number of processing parameters, and if the high strength is once lost during fabrication, it cannot be recovered. The microstructural evolution of the alloy under irradiation falls into two regimes. Below about 550 C, dislocation development, {alpha}{prime} precipitation and void evolution in the matrix are observed, while above about 550 C damage appears to be restricted to cavity formation within oxide particles. The thermal expansion of the alloy is very similar to that of HT9 up to the temperature where HT9 undergoes a phase transition to austenitic. Pulse magnetic welding of end caps onto MA957 tubing can be accomplished in a manner similar to that in which it is performed on HT9, although the welding parameters appear to be very sensitive to variations in the tubing that result from small changes in fabrication conditions. The tensile and stress rupture behavior of the alloy are acceptable in the unirradiated condition, being comparable to HT9 below about 700 C and exceeding those of HT9

  19. Oxide fuel fabrication technology development of the FaCT project (1). Overall review of fuel technology development of the FaCT project

    International Nuclear Information System (INIS)

    Abe, Tomoyuki; Namekawa, Takashi; Tanaka, Kenya

    2011-01-01

    The FaCT project is in progress in Japan for the commercialization of fast reactor cycle system. The development goal of the fuel in the FaCT project is a low-decontaminated TRU homo-recycling in a closed cycle and extension in average discharge burn-up to 150 GWd/t. Research and development on innovative technologies concerning the short process, remote maintenance and cooling system of automatic fuel production equipments, long life cladding material and control of oxygen potential have been conducted in phase I of the FaCT project. As the result of various test including 600 g batch MOX tests, it is concluded that the short process is available to fuel pellet fabrication of the FaCT project. Although cold mock-up tests on test model of some typical process equipments suggest possibilities of remote maintenance of automatic fuel fabrication equipment, it is concluded that it still needs further efforts to judge the operability of the completely remote fabrication for low-decontaminated TRU fuel. A cold mock-up test on fuel pin assembling equipment show that influence of decay heat of MA can be managed by cooling system. Irradiation tests in BOR-60 indicate that 9Cr-ODS possess the satisfactory in-reactor performance as the long life cladding material if homogeneity of alloy element is adequately controlled. Modification of cladding tube fabrication process to ensure homogeneity and further development of measures to control oxygen potential inside the fuel pin are necessary to reach the burn-up target of the FaCT project. (author)

  20. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    Directory of Open Access Journals (Sweden)

    Takeshi Aoki

    2015-08-01

    Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  1. Advanced Fabrication of Single-Crystal Diamond Membranes for Quantum Technologies

    Directory of Open Access Journals (Sweden)

    Michel Challier

    2018-03-01

    Full Text Available Many promising applications of single crystal diamond and its color centers as sensor platform and in photonics require free-standing membranes with a thickness ranging from several micrometers to the few 100 nm range. In this work, we present an approach to conveniently fabricate such thin membranes with up to about one millimeter in size. We use commercially available diamond plates (thickness 50 μ m in an inductively coupled reactive ion etching process which is based on argon, oxygen and SF 6 . We thus avoid using toxic, corrosive feed gases and add an alternative to previously presented recipes involving chlorine-based etching steps. Our membranes are smooth (RMS roughness <1 nm and show moderate thickness variation (central part: <1 μ m over ≈200 × 200 μ m 2 . Due to an improved etch mask geometry, our membranes stay reliably attached to the diamond plate in our chlorine-based as well as SF 6 -based processes. Our results thus open the route towards higher reliability in diamond device fabrication and up-scaling.

  2. Cost update: Technology, safety, and costs of decommissioning a reference uranium fuel fabrication plant

    International Nuclear Information System (INIS)

    Miles, T.L.; Liu, Y.

    1994-06-01

    The cost estimates originally developed in NUREG/CR-1266 for commissioning a reference low-enrichment uranium fuel fabrication plant are updated from 1978 to early 1993 dollars. During this time, the costs for labor and materials increased approximately at the rate of inflation, the cost of energy increased more slowly than the rate of inflation, and the cost of low-level radioactive waste disposal increased much more rapidly than the rate of inflation. The results of the analysis indicate that the estimated costs for the immediate dismantlement and decontamination for unrestricted facility release (DECON) of the reference plant have increased from the mid-1978 value of $3.57 million to $8.08 million in 1993 with in-compact low-level radioactive waste disposal at the US Ecoloay facility near Richland, Washington. The cost estimate rises to $19.62 million with out-of-compact radioactive waste disposal at the Chem-Nuclear facility near Barnwell, South Carolina. A methodology and a formula are presented for estimating the cost of decommissioning the reference uranium fuel fabrication plant at some future time, based on these early 1993 cost estimates. The formula contains essentially the same elements as the formula given in 10 CFR 50.75 for escalating the decommissioning costs for nuclear power reactors to some future time

  3. 2,6-Bis(benzo[b]thiophen-2-yl-3,7-dipentadecyltetrathienoacene (DBT-TTAR2 as an Alternative of Highly Soluble p-type Organic Semiconductor for Organic Thin Film Transistor (OTFT Application

    Directory of Open Access Journals (Sweden)

    Mery B. Supriadi

    2013-03-01

    Full Text Available A new compound of organic semiconductor based on tetrathienoacene (TTA derivatives, DBT-TTAR2 was synthesized and characterized. The corporation of dibenzo[b,d]thiophene (DBT group and alkyl substituent in both ends of TTA core have a significant effect on their π-π molecular conjugation length, energy gaps value and solubility properties. DBT-TTAR2 is fabricated as p-type organic semiconductor of organic thin film transistor (OTFT by solution process at Industrial Technology Research Institute, Taiwan. A good optical, electrochemical, and thermal properties of DBT-TTAR2 showed that its exhibits a better performance as highly soluble p-type organic semiconductor.

  4. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  5. Low-cost fabrication technologies for nanostructures: state-of-the-art and potential

    International Nuclear Information System (INIS)

    Santos, A; Deen, M J; Marsal, L F

    2015-01-01

    In the last decade, some low-cost nanofabrication technologies used in several disciplines of nanotechnology have demonstrated promising results in terms of versatility and scalability for producing innovative nanostructures. While conventional nanofabrication technologies such as photolithography are and will be an important part of nanofabrication, some low-cost nanofabrication technologies have demonstrated outstanding capabilities for large-scale production, providing high throughputs with acceptable resolution and broad versatility. Some of these nanotechnological approaches are reviewed in this article, providing information about the fundamentals, limitations and potential future developments towards nanofabrication processes capable of producing a broad range of nanostructures. Furthermore, in many cases, these low-cost nanofabrication approaches can be combined with traditional nanofabrication technologies. This combination is considered a promising way of generating innovative nanostructures suitable for a broad range of applications such as in opto-electronics, nano-electronics, photonics, sensing, biotechnology or medicine. (topical review)

  6. Fabrication Technology for X-Ray Optics and Mandrels, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — NASA has a cross-project need for large format aspheric x-ray optics, which, demonstrate exceptionally low periodic surface errors. Available technologies to both...

  7. Low-cost fabrication technologies for nanostructures: state-of-the-art and potential

    Science.gov (United States)

    Santos, A.; Deen, M. J.; Marsal, L. F.

    2015-01-01

    In the last decade, some low-cost nanofabrication technologies used in several disciplines of nanotechnology have demonstrated promising results in terms of versatility and scalability for producing innovative nanostructures. While conventional nanofabrication technologies such as photolithography are and will be an important part of nanofabrication, some low-cost nanofabrication technologies have demonstrated outstanding capabilities for large-scale production, providing high throughputs with acceptable resolution and broad versatility. Some of these nanotechnological approaches are reviewed in this article, providing information about the fundamentals, limitations and potential future developments towards nanofabrication processes capable of producing a broad range of nanostructures. Furthermore, in many cases, these low-cost nanofabrication approaches can be combined with traditional nanofabrication technologies. This combination is considered a promising way of generating innovative nanostructures suitable for a broad range of applications such as in opto-electronics, nano-electronics, photonics, sensing, biotechnology or medicine.

  8. The improvement of all-solid-state electrochromic devices fabricated with the reactive sputter and cathodic arc technology

    Directory of Open Access Journals (Sweden)

    Min-Chuan Wang

    2016-11-01

    Full Text Available The all-solid-state electrochromic device (ECD with the one substrate structure fabricated by the reactive dc magnetron sputtering (DCMS and cathodic vacuum arc plasma (CVAP technology has been developed for smart electrochromic (EC glass application. The EC layer and ion conductor layer were deposited by reactive DCMS and CVAP technology, respectively. The ion conductor layer Ta2O5 deposited by the CVAP technology has provided the better porous material structure for ion transportation and showed 1.76 times ion conductivity than devices with all sputtering process. At the same time, the EC layer WO3 and NiO deposited by the reactive DCMS have also provided the high quality and uniform characteristic to overcome the surface roughness effect of the CVAP ion conductor layer in multilayer device structure. The all-solid-state ECD with the CVAP ion conductor layer has demonstrated a maximum transmittance variation (ΔT of 55% at 550nm and a faster-switching speed. Furthermore, the lower equipment cost and higher deposition rate could be achieved by the application of CVAP technology.

  9. Micro-fabrication technology for piezoelectric film formation and its application to MEMS

    OpenAIRE

    一木, 正聡; 曹, 俊杰; 張, 麓〓; 王, 占杰; 前田, 龍太郎; Masaaki, ICHIKI; Jiunn Jye, TSAUR; Lulu, ZHANG; Zhang Jie, WANG; Ryutaro, MAEDA; 産業技術総合研究所; 産業技術総合研究所; 産業技術総合研究所; 東北大学; 産業技術総合研究所

    2005-01-01

    Technological problems for realization of Micro Electro-mechanical System (MEMS) are discussed and an introduction of smart materials (PZT) is encouraged. The film formation and micromaching technology are discussed in integration of PZT thin films into MEMS. Further developments are proposed on PZT micro sensors and actuators with special emphasis laid on exploration of new application fields of MEMS, such as scanning mirror. Internal stress is estimated and analyzed for the improvement of d...

  10. Fiscal 1999 research report on long-term energy technology strategy. Basic research on industrial technology strategy (Individual technology strategy). Machine industry technology field (Semiconductor equipment); 1999 nendo choki energy gijutsu senryaku nado ni kansuru chosa hokokusho. Sangyo gijutsu senryaku sakutei kiban chosa (bun'yabetsu gijutsu senryaku) kikai sangyo gijutsu bun'ya (handotai seizo sochi bun'ya)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    This report summarizes the fiscal 1999 basic research result on industrial technology strategy of a semiconductor equipment field, viewing until 5-10 years after. For the future semiconductor industry, the favorable cycling of creation of new demands through performance improvement, and further technology innovation through market expansion is essential absolutely. Since technology development is followed by investment, not only the performance of each equipment but also the higher productivity and cost balance of the whole factory are essential. Self-intelligent function and networking are thus necessary for the equipment. As measures for environment preservation and energy saving, such innovative technologies are required as recycling, reuse, reaction process improvement and alternative technology. Because of diverse final products and a short life time of products, a large-scale collective investment is becoming difficult. A mini-line sequential investment production system according to demand scales is under investigation. Some issues such as micro-technology, realization of 300mm wafer, modularization, CIM, reliability and standardization are also described. (NEDO)

  11. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  12. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  13. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  14. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  15. The development of SiC whisker fabrication technology for nuclear applications

    International Nuclear Information System (INIS)

    Kang, Thae Khapp; Kuk, Il Hiun; Kim, Chang Kyu; Lee, Jae Chun; Lee, Ho Jin; Park, Soon Dong; Im, Gyeong Soo

    1991-02-01

    Some important experiments for whisker growth reactions, fabrication processes, and experiments for fabricarion of whisker reinforced composites have been performed. In order to investigate growth reaction of SiC whiskers, a conventional carbothermic reaction was tested. Based on the results of carbothermic process, a new process called silicothermic reaction was planned and some basic experiments were performed. Reaction characteristics of silicon monoxide, core material for SiC whisker growth in both of the reactions were investigated for basic data. Additionally, a hydrofluoric acid leaching process was tested for developing SiC whisker recovery process, and powder metallurgy process and melt sqeeze process were tried to develop aluminum-SiC whisker composites. (Author)

  16. Evaluation of environmental control technologies for commercial uranium nuclear fuel fabrication facilities

    International Nuclear Information System (INIS)

    Perkins, B.L.

    1983-01-01

    At present in the United States, there are seven commercial light-water reactor uranium fuel fabrication facilities. Effluent wastes from these facilities include uranium, nitrogen, fluorine, and organic-containing compounds. These effluents may be either discharged to the ambient environment, treated and recycled internally, stored or disposed of on-site, sent off-site for treatment and/or recovery, or sent off-site for disposal (including disposal in low-level waste burial sites). Quantities of waste generated and treatment techniques vary greatly depending on the facility and circuits used internally at the facility, though in general all the fluorine entering the facility as UF 6 is discharged as waste. Further studies to determine techniques and procedures that might minimize dose (ALARA) and to give data on possible long-term effects of effluent discharge and waste disposal are needed

  17. Novel materials for electronic device fabrication using ink-jet printing technology

    International Nuclear Information System (INIS)

    Kumashiro, Yasushi; Nakako, Hideo; Inada, Maki; Yamamoto, Kazunori; Izumi, Akira; Ishihara, Masamichi

    2009-01-01

    Novel materials and a metallization technique for the printed electronics were studied. Insulator inks and conductive inks were investigated. For the conductive ink, the nano-sized copper particles were used as metallic sources. These particles were prepared from a copper complex by a laser irradiation process in the liquid phase. Nano-sized copper particles were consisted of a thin copper oxide layer and a metal copper core wrapped by the layer. The conductive ink showed good ink-jettability. In order to metallize the printed trace of the conductive ink on a substrate, the atomic hydrogen treatment was carried out. Atomic hydrogen was generated on a heated tungsten wire and carried on the substrate. The temperature of the substrate was up to 60 deg. C during the treatment. After the treatment, the conductivity of a copper trace was 3 μΩ cm. It was considered that printed wiring boards can be easily fabricated by employing the above materials.

  18. Microactuator production via high aspect ratio, high edge acuity metal fabrication technology

    Science.gov (United States)

    Guckel, H.; Christenson, T. R.

    1993-01-01

    LIGA is a procession sequence which uses x-ray lithography on photoresist layers of several hundred micrometers to produce very high edge acuity photopolymer molds. These plastic molds can be converted to metal molds via electroplating of many different metals and alloys. The end results are high edge acuity metal parts with large structural heights. The LIGA process as originally described by W. Ehrfeld can be extended by adding a surface micromachining phase to produce precision metal parts which can be assembled to form three-dimensional micromechanisms. This process, SLIGA, has been used to fabricate a dynamometer on a chip. The instrument has been fully implemented and will be applied to tribology issues, speed-torque characterization of planar magnetic micromotors and a new family of sensors.

  19. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  20. Some problems on domestic technology development from a point of fabricator of nuclear power plant. [Japan

    Energy Technology Data Exchange (ETDEWEB)

    Watamori, T [Hitachi Ltd., Tokyo (Japan)

    1976-06-01

    During past 20 years, the nuclear power industry in Japan has introduced foreign technology, digested it in a short period, and continued to research and develop domestic technology. Now, 95% of the machinery and equipments for nuclear power generation with light water reactors can be produced domestically, and some technologies are going to be exported. However, the nuclear power industry is still in a severe environment. The progress of the development of nuclear power plants passed the periods of organizational preparation, the construction of research reactors, the import of foreign technologies and reactors for practical use, and the construction of domestically produced reactors for practical use. The supplying capacity of the nuclear power industry in Japan reached 6 units of 1,000 MW yearly, but in order to meet the long term plan of nuclear power generation, this capacity must be further enhanced. The problems in the promotion of domestic production are the establishment of independent technologies, the promotion of standardization, the strengthening of business basis, the upbringing of relating enterprises, and the acceleration of national projects. Since the energy crisis, the trend of filling up energy demand with nuclear power generation became conspicuous, but for the expansion of export, the problems of safety guarantee, nuclear fuel cycle, and financial measures must be solved with government aid.

  1. Some problems on domestic technology development from a point of fabricator of nuclear power plant

    International Nuclear Information System (INIS)

    Watamori, Tsutomu

    1976-01-01

    During past 20 years, the nuclear power industry in Japan has introduced foreign technology, digested them in short period, and continued to research and develop domestic technology. Now, 95% of the machinery and equipments for nuclear power generation with light water reactors can be produced domestically, and some technologies are going to be exported. However, the nuclear power industry is still in severe environment. The progress of the development of nuclear power plants passed the periods of organizational preparation, the construction of research reactors, the import of foreign technologies and reactors for practical use, and the construction of domestically produced reactors for practical use. The supplying capacity of the nuclear power industry in Japan reached 6 units of 1,000 MW yearly, but in order to meet the long term plan of nuclear power generation, this capacity must be further enhanced. The problems in the promotion of domestic production are the establishment of independent technologies, the promotion of standardization, the strengthening of business basis, the upbringing of relating enterprises, and the acceleration of national projects. Since the energy crisis, the trend of filling up energy demand with nuclear power generation became conspicuous, but for the expansion of export, the problems of safety guarantee, nuclear fuel cycle, and financial measures must be solved with government aid. (Kako, I.)

  2. Three-dimensional simulations in optimal performance trial between two types of Hall sensors fabrication technologies

    Energy Technology Data Exchange (ETDEWEB)

    Paun, Maria-Alexandra, E-mail: map65@cam.ac.uk

    2015-10-01

    The main objective of the present work is to make a comparison between Hall devices integrated in regular bulk and Silicon-on-Insulator (SOI) CMOS technology. A three-dimensional model based on numerical estimation is provided for a particular XL Hall structure in two different technologies (the first one is XFAB XH 0.35 µm regular bulk CMOS and the second one is XFAB SOI XI10 1 µm non-fully depleted). In assessing the performance of the Hall Effect sensors included in the comparison, both three-dimensional physical simulations and measurements results will be used. In order to discriminate which category of sensors has the highest performance, their main characteristic parameters, including input resistance, Hall voltage, absolute sensitivity and their temperature drift, will be extracted and compared. Electrostatic potential and current density distribution are important aspects that are also investigated. The particular technology offering the highest sensor performance is identified. - Highlights: • A comparison between Hall devices integrated in regular bulk and SOI CMOS technologies is made. • A three-dimensional model for the XL Hall structure, in the two technologies, is provided. • The main characteristic parameters and the temperature drift are investigated. • The sensors performance is evaluated using 3D physical simulations and measurements data.

  3. Electronic technology

    International Nuclear Information System (INIS)

    Kim, Jin Su

    2010-07-01

    This book is composed of five chapters, which introduces electronic technology about understanding of electronic, electronic component, radio, electronic application, communication technology, semiconductor on its basic, free electron and hole, intrinsic semiconductor and semiconductor element, Diode such as PN junction diode, characteristic of junction diode, rectifier circuit and smoothing circuit, transistor on structure of transistor, characteristic of transistor and common emitter circuit, electronic application about electronic equipment, communication technology and education, robot technology and high electronic technology.

  4. AIM Photonics: Tomorrow’s Technology at the Speed of Light

    Science.gov (United States)

    2016-09-01

    information ) for automotive, body sensing and holographic user interfaces are all disruptive photonic technologies that should change how people com...manufacturing technologies . The semiconductor industry has enjoyed decades of constantly increasing integration and miniaturization, often referred...contribute to productivity. These include the formation of “fabless” ( outsourced fabrication) companies, dedicated foundries, independent electronic

  5. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  6. Cost-Benefit Analysis for the Advanced Near Net Shape Technology (ANNST) Method for Fabricating Stiffened Cylinders

    Science.gov (United States)

    Ivanco, Marie L.; Domack, Marcia S.; Stoner, Mary Cecilia; Hehir, Austin R.

    2016-01-01

    Low Technology Readiness Levels (TRLs) and high levels of uncertainty make it challenging to develop cost estimates of new technologies in the R&D phase. It is however essential for NASA to understand the costs and benefits associated with novel concepts, in order to prioritize research investments and evaluate the potential for technology transfer and commercialization. This paper proposes a framework to perform a cost-benefit analysis of a technology in the R&D phase. This framework was developed and used to assess the Advanced Near Net Shape Technology (ANNST) manufacturing process for fabricating integrally stiffened cylinders. The ANNST method was compared with the conventional multi-piece metallic construction and composite processes for fabricating integrally stiffened cylinders. Following the definition of a case study for a cryogenic tank cylinder of specified geometry, data was gathered through interviews with Subject Matter Experts (SMEs), with particular focus placed on production costs and process complexity. This data served as the basis to produce process flowcharts and timelines, mass estimates, and rough order-of-magnitude cost and schedule estimates. The scalability of the results was subsequently investigated to understand the variability of the results based on tank size. Lastly, once costs and benefits were identified, the Analytic Hierarchy Process (AHP) was used to assess the relative value of these achieved benefits for potential stakeholders. These preliminary, rough order-of-magnitude results predict a 46 to 58 percent reduction in production costs and a 7-percent reduction in weight over the conventional metallic manufacturing technique used in this study for comparison. Compared to the composite manufacturing technique, these results predict cost savings of 35 to 58 percent; however, the ANNST concept was heavier. In this study, the predicted return on investment of equipment required for the ANNST method was ten cryogenic tank barrels

  7. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  8. Development of Advanced Technologies to Reduce Design, Fabrication and Construction Costs for Future Nuclear Power Plants

    International Nuclear Information System (INIS)

    DiNunzio, Camillo A.; Gupta, Abhinav; Golay, Michael; Luk, Vincent; Turk, Rich; Morrow, Charles; Geum-Taek Jin

    2002-01-01

    OAK-B135 This report presents a summation of the third and final year of a three-year investigation into methods and technologies for substantially reducing the capital costs and total schedule for future nuclear plants. In addition, this is the final technical report for the three-year period of studies

  9. Fabrication of nano structures in thin membranes with focused ion beam technology

    NARCIS (Netherlands)

    Gadgil, V.J.; Tong, D.H.; Cesa, Y.; Bennink, Martin L.

    2009-01-01

    In recent years, Focused Ion Beam (FIB) technology has emerged as an important tool for nanotechnology [V.J. Gadgil, F. Morrissey, Encyclopaedia of Nanoscience and Nanotechnology, vol. 1, American Science Publishers, ISBN: 1-58883-057-8, 2004, p101.]. In this paper, applications of focused ion beam

  10. Development of Advanced Technologies to Reduce Design, Fabrication and Construction Costs for Future Nuclear Power Plants

    Energy Technology Data Exchange (ETDEWEB)

    DiNunzio, Camillo A. [Framatome ANP DE& S, Marlborough, MA (United States); Gupta, Abhinav [Univ. of North Carolina, Raleigh, NC (United States); Golay, Michael [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Luk, Vincent [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Turk, Rich [Westinghouse Electric Company Nuclear Systems, Windsor, CT (United States); Morrow, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Jin, Geum-Taek [Korea Power Engineering Company Inc., Yongin-si, Gyeonggi-do (Korea, Republic of)

    2002-11-30

    This report presents a summation of the third and final year of a three-year investigation into methods and technologies for substantially reducing the capital costs and total schedule for future nuclear plants. In addition, this is the final technical report for the three-year period of studies.

  11. Fabrication of Nanostructured Poly-ε-caprolactone 3D Scaffolds for 3D Cell Culture Technology

    KAUST Repository

    Schipani, Rossana

    2015-01-01

    . The suitability of these devices as cell culture technology supports was evaluated by plating NIH/3T3 mouse embryonic fibroblasts and human Neural Stem Cells (hNSC) on them. Scanning Electron Microscopy (SEM) analysis was carried out in order to examine the micro

  12. Smart DNA Fabrication Using Sound Waves: Applying Acoustic Dispensing Technologies to Synthetic Biology.

    Science.gov (United States)

    Kanigowska, Paulina; Shen, Yue; Zheng, Yijing; Rosser, Susan; Cai, Yizhi

    2016-02-01

    Acoustic droplet ejection (ADE) technology uses focused acoustic energy to transfer nanoliter-scale liquid droplets with high precision and accuracy. This noncontact, tipless, low-volume dispensing technology minimizes the possibility of cross-contamination and potentially reduces the costs of reagents and consumables. To date, acoustic dispensers have mainly been used in screening libraries of compounds. In this paper, we describe the first application of this powerful technology to the rapidly developing field of synthetic biology, for DNA synthesis and assembly at the nanoliter scale using a Labcyte Echo 550 acoustic dispenser. We were able to successfully downscale PCRs and the popular one-pot DNA assembly methods, Golden Gate and Gibson assemblies, from the microliter to the nanoliter scale with high assembly efficiency, which effectively cut the reagent cost by 20- to 100-fold. We envision that acoustic dispensing will become an instrumental technology in synthetic biology, in particular in the era of DNA foundries. © 2015 Society for Laboratory Automation and Screening.

  13. Direct fabrication through electron beam melting technology of custom cranial implants designed in a PHANToM-based haptic environment

    International Nuclear Information System (INIS)

    Mazzoli, Alida; Germani, Michele; Raffaeli, Roberto

    2009-01-01

    Repairing critical human skull injuries requires the production and use of customized cranial implants and involves the integration of computer aided design and manufacturing (CAD and CAM). The main causes for large cranial defects are trauma, cranial tumors, infected craniotomy bone flaps and external neurosurgical decompression. The success of reconstructive cranial surgery depends upon: the preoperative evaluation of the defect, the design and manufacturing of the implant, and the skill of the operating surgeon. Cranial implant design is usually carried out manually using CAD although this process is very time-consuming and the quality of the end product depends wholly upon the skill of the operator. This paper presents an alternative automated method for the design of custom-made cranial plates in a PHANToM ® -based haptic environment, and their direct fabrication in biocompatible metal using electron beam melting (EBM) technology.

  14. Fabrication of a high-density MCM-D for a pixel detector system using a BCB/Cu technology

    CERN Document Server

    Topper, M; Engelmann, G; Fehlberg, S; Gerlach, P; Wolf, J; Ehrmann, O; Becks, K H; Reichl, H

    1999-01-01

    The MCM-D which is described here is a prototype for a pixel detector system for the planned Large Hadron Collider (LHC) at CERN, Geneva. The project is within the ATLAS experiment. The module consists of a sensor tile with an active area of 16.4 mm*60.4 mm, 16 readout chips, each serving 24*160 pixel unit cells, a module controller chip, an optical transceiver and the local signal interconnection and power distribution buses. The extremely high wiring density which is necessary to interconnect the readout chips was achieved using a thin film copper/photo-BCB process above the pixel array. The bumping of the readout chips was done by PbSn electroplating. All dice are then attached by flip-chip assembly to the sensor diodes and the local buses. The focus of this paper is a detailed description of the technologies for the fabrication of this advanced MCM-D. (10 refs).

  15. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  16. Tensile strength changeability of multilayered composites, fabricated through optimized VARTM Technology, an experimental

    International Nuclear Information System (INIS)

    Nasir, M.A.; Khan, Z.M.

    2016-01-01

    Life span estimation up to tensile fracture of different fiber reinforced composites, Kevlar Fiber Reinforced Polymer (KFRP) and Glass Fiber Reinforced Polymer (GFRP) along with the strain rate effects on dynamic properties is mainly viewed on experimental basis in this paper. Lab-scale Vacuum Assisted Resin Transfer Molding (VARTM) technique is used to fabricate flawless dog bone specimens considering ASTM standard D638-03 and by using LY5052 resin and HY 5052 hardener. In this research, it is tried to maintain 65% of fiber participation in whole specimen composition matrix. Detail design description of VARTM is also discussed and optimized up to maximum scale to acquire compact, uniformly strengthen and porosity banned standard specimens. A conventional stress-strain curve is established to compare the tensile validity of above mentioned competitive composites. Crack Opening Displacement (COD) of research materials after equal intervals of time is observed; results depict the shear stability and reinforcement perfection of these materials. The crack penetration behavior is examined transversely and longitudinally in this research. (author)

  17. Fabrication of Li{sub 4}SiO{sub 4} pebbles by gel-precipitation technology

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Z.; Wu, X.; Gu, Z. [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai (China)

    2007-07-01

    Full text of publication follows: Lithium orthosilicate (Li{sub 4}SiO{sub 4}) is considered as a promising candidate as breeder material for fusion reactors due to its high lithium content, high stability and favorable tritium release behavior. The shape the breeder materials adopted was determined by many factors, such as the tritium breeding ratio, the ease of diffusion of tritium, the release of thermal stress and irradiation cracking etc. At present pebble configuration has been recognized as the preferred option in most blanket designs for tritium breeders. In the fabrication of spheres of a ceramic material, there are several methods available: the agglomeration of powders, melt-spraying method, sol-gel process and gel-precipitation process. Li{sub 4}SiO{sub 4} pebbles with satisfying quality have been fabricated by melt-spraying method. But expensive experimental equipment and high temperature restrict the extensive application of the method. Gel-precipitation can be operated at room temperature and no special equipment is needed. The technique has been successfully used to produce lithium aluminate ceramic spheres. In this work, fabrication of Li{sub 4}SiO{sub 4} pebbles by gel-precipitation technology was first time investigated systematically. LiOH, citric acid and SiO{sub 2} (aerosil) were used as raw materials. SiO{sub 2} (aerosil) was dispersed in the gel formed by LiOH and citric acid, milky suspension was then obtained and Li{sub 4}SiO{sub 4} pebbles were produced from the milky suspension. The pebbles obtained displayed pure Li{sub 4}SiO{sub 4} phase, exhibited high sphericity, uniform distribution in size, small amount of pores and cracks. Phase transformation with the molar ratio of SiO{sub 2}/LiOH was investigated. The effect of sintering temperature on microstructure was discussed. The water-based gel-precipitation method for fabrication of Li{sub 4}SiO{sub 4} spheres was simple and convenient to realize mass production. (authors)

  18. A capacitive power sensor based on the MEMS cantilever beam fabricated by GaAs MMIC technology

    Science.gov (United States)

    Yi, Zhenxiang; Liao, Xiaoping

    2013-03-01

    In this paper, a novel capacitive power sensor based on the microelectromechanical systems (MEMS) cantilever beam at 8-12 GHz is proposed, fabricated and tested. The presented design can not only realize a cantilever beam instead of the conventional fixed-fixed beam, but also provide fine compatibility with the GaAs monolithic microwave integrated circuit (MMIC) process. When the displacement of the cantilever beam is very small compared with the initial height of the air gap, the capacitance change between the measuring electrode and the cantilever beam has an approximately linear dependence on the incident radio frequency (RF) power. Impedance compensating technology, by modifying the slot width of the coplanar waveguide transmission line, is adopted to minimize the effect of the cantilever beam on the power sensor; its validity is verified by the simulation of high frequency structure simulator software. The power sensor has been fabricated successfully by Au surface micromachining using polyimide as the sacrificial layer on the GaAs substrate. Optimization of the design with impedance compensating technology has resulted in a measured return loss of less than -25 dB and an insertion loss of around 0.1 dB at 8-12 GHz, which shows the slight effect of the cantilever beam on the microwave performance of this power sensor. The measured capacitance change starts from 0.7 fF to 1.3 fF when the incident RF power increases from 100 to 200 mW and an approximate linear dependence has been obtained. The measured sensitivities of the sensor are about 6.16, 6.27 and 6.03 aF mW-1 at 8, 10 and 12 GHz, respectively.

  19. A capacitive power sensor based on the MEMS cantilever beam fabricated by GaAs MMIC technology

    International Nuclear Information System (INIS)

    Yi, Zhenxiang; Liao, Xiaoping

    2013-01-01

    In this paper, a novel capacitive power sensor based on the microelectromechanical systems (MEMS) cantilever beam at 8–12 GHz is proposed, fabricated and tested. The presented design can not only realize a cantilever beam instead of the conventional fixed–fixed beam, but also provide fine compatibility with the GaAs monolithic microwave integrated circuit (MMIC) process. When the displacement of the cantilever beam is very small compared with the initial height of the air gap, the capacitance change between the measuring electrode and the cantilever beam has an approximately linear dependence on the incident radio frequency (RF) power. Impedance compensating technology, by modifying the slot width of the coplanar waveguide transmission line, is adopted to minimize the effect of the cantilever beam on the power sensor; its validity is verified by the simulation of high frequency structure simulator software. The power sensor has been fabricated successfully by Au surface micromachining using polyimide as the sacrificial layer on the GaAs substrate. Optimization of the design with impedance compensating technology has resulted in a measured return loss of less than −25 dB and an insertion loss of around 0.1 dB at 8–12 GHz, which shows the slight effect of the cantilever beam on the microwave performance of this power sensor. The measured capacitance change starts from 0.7 fF to 1.3 fF when the incident RF power increases from 100 to 200 mW and an approximate linear dependence has been obtained. The measured sensitivities of the sensor are about 6.16, 6.27 and 6.03 aF mW −1 at 8, 10 and 12 GHz, respectively. (paper)

  20. Fabrication and Characterisation of Optical Semiconductor Components

    DEFF Research Database (Denmark)

    Christiansen, Lotte Jin

    2006-01-01

    Formålet med projektet har været at fremstille en ny og simpel halvleder komponent til regenerering af optiske telekommunikations signaler. Mange af de hidtil mest brugte komponenter til dette formål er såkaldte interferometre, som kan være meget svære at fremstille rent procesteknisk, samtidig m...

  1. Wafer-scale micro-optics fabrication

    Science.gov (United States)

    Voelkel, Reinhard

    2012-07-01

    Micro-optics is an indispensable key enabling technology for many products and applications today. Probably the most prestigious examples are the diffractive light shaping elements used in high-end DUV lithography steppers. Highly-efficient refractive and diffractive micro-optical elements are used for precise beam and pupil shaping. Micro-optics had a major impact on the reduction of aberrations and diffraction effects in projection lithography, allowing a resolution enhancement from 250 nm to 45 nm within the past decade. Micro-optics also plays a decisive role in medical devices (endoscopes, ophthalmology), in all laser-based devices and fiber communication networks, bringing high-speed internet to our homes. Even our modern smart phones contain a variety of micro-optical elements. For example, LED flash light shaping elements, the secondary camera, ambient light and proximity sensors. Wherever light is involved, micro-optics offers the chance to further miniaturize a device, to improve its performance, or to reduce manufacturing and packaging costs. Wafer-scale micro-optics fabrication is based on technology established by the semiconductor industry. Thousands of components are fabricated in parallel on a wafer. This review paper recapitulates major steps and inventions in wafer-scale micro-optics technology. The state-of-the-art of fabrication, testing and packaging technology is summarized.

  2. An electrostatic 3-phase linear stepper motor fabricated by vertical trench isolation technology

    International Nuclear Information System (INIS)

    Sarajlic, Edin; Yamahata, Christophe; Cordero, Mauricio; Fujita, Hiroyuki

    2009-01-01

    We present the design, microfabrication and characterization of an electrostatic 3-phase linear stepper micromotor constructed with vertical trench isolation technology. This suitable technology was used to create a monolithic stepper motor with high-aspect-ratio poles and an integrated 3-phase electrical network in the bulk of a standard single-crystal silicon wafer. The shuttle of the stepper motor is suspended by a flexure to avoid any mechanical contact during operation, enhancing the precision, repeatability and reliability of the stepping motion. The prototype is capable of a maximum travel of +/−26 µm (52 µm) at an actuation voltage of 30 V and a step size of 1.4 µm during a half-stepping sequence

  3. An electrostatic 3-phase linear stepper motor fabricated by vertical trench isolation technology

    Science.gov (United States)

    Sarajlic, Edin; Yamahata, Christophe; Cordero, Mauricio; Fujita, Hiroyuki

    2009-07-01

    We present the design, microfabrication and characterization of an electrostatic 3-phase linear stepper micromotor constructed with vertical trench isolation technology. This suitable technology was used to create a monolithic stepper motor with high-aspect-ratio poles and an integrated 3-phase electrical network in the bulk of a standard single-crystal silicon wafer. The shuttle of the stepper motor is suspended by a flexure to avoid any mechanical contact during operation, enhancing the precision, repeatability and reliability of the stepping motion. The prototype is capable of a maximum travel of +/-26 µm (52 µm) at an actuation voltage of 30 V and a step size of 1.4 µm during a half-stepping sequence. This work was presented in part at the 19th MicroMechanics Europe Workshop (MME), 28-30 September 2008, Aachen, Germany.

  4. Fabrication of advanced targets for laser driven nuclear fusion reactions through standard microelectronics technology approaches.

    Czech Academy of Sciences Publication Activity Database

    Picciotto, A.; Crivellari, M.; Bellutti, P.; Barozzi, M.; Kucharik, M.; Krása, Josef; Swidlovsky, A.; Malinowska, A.; Velyhan, Andriy; Ullschmied, Jiří; Margarone, Daniele

    2017-01-01

    Roč. 12, October (2017), č. článku P10001. ISSN 1748-0221 Grant - others:OP VK 2 LaserGen(XE) CZ.1.07/2.3.00/20.0087; LaserZdroj (OP VK 3)(XE) CZ.1.07/2.3.00/20.0279 Institutional support: RVO:61389021 ; RVO:68378271 Keywords : Nuclear instruments and methods for hot plasma diagnostics * Plasma generation (laserproduced, RF, x ray-produced) * Plasma diagnostics - charged-particle spectroscopy Subject RIV: BL - Plasma and Gas Discharge Physics; BL - Plasma and Gas Discharge Physics (FZU-D) OBOR OECD: 2.11 Other engineering and technologies; 2.11 Other engineering and technologies (FZU-D) Impact factor: 1.220, year: 2016 http://iopscience.iop.org/article/10.1088/1748-0221/12/10/P10001/meta

  5. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    Science.gov (United States)

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  6. Technological features of Lima fabrics associated with funerary contexts in Huaca Pucllana

    OpenAIRE

    Chuchón Ayala, Hilda

    2017-01-01

    A detailed description of the technological features of the textiles found in funerary contexts and architectural hills of the latest occupational phases of the Lima Culture is presented. These materials were found as part of the Huaca Pucllana research project established by the Municipality of Miraflores and the Ministry of Culture. Preliminary results indicate that in funerary contexts one or two simple plain weave cotton textiles were used to bundle the bodies. In some cases complete fabr...

  7. An Effort to Improve U Foil Fabrication Technology of Roll-casting for Fission Mo Target

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang Kyu; Woo, Yun Myeong; Kim, Ki Hwan; Oh, Jong Myeong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Sim, Moon Soo [Chungnam University, Green Energy Technology, Daejeon (Korea, Republic of)

    2010-10-15

    Mo-99 isotope has been produced mainly by extracting fission products of {sup 235}U. The targets for irradiating in reactor have used as stainless tube coated with highly enriched UO{sub 2} at the inside surface and highly enriched UAlx plate cladded with aluminum. In connection with non-proliferation policy the RERTR program developed a new process of Mo-99 using low enriched uranium (LEU) instead of highly enriched uranium (HEU). LEU should be put about five times more quantity than HEU because the {sup 235}U contents of LEU and HEU are 20% and higher than 90%, respectively. Accordingly pure uranium metal foil target was adopted as a promising target material due to high uranium density. ANL and BATAN developed a Cintichem process using uranium metal foil target of 130 {mu}m in thickness jointly and the RERTR program is trying to disseminate the new process world-widely. However, uranium foil is made by lots of times rolling work on uranium plate, which is laborious and tedious. In order to avoid this difficulty KAERI developed a new process of making foil directly from uranium melt by roll casting. This process is very much simple, productive, and cost-effective. But the outside surface of foil is generally very rough. A typical transverse cross section had a minimum thickness of 65 {mu}m and a maximum thickness of 205 {mu}m. This roughness could affect (1) target fabrication, where the U foil, or the Ni foil might be damaged during drawing, and (2) irradiation behavior, where gaps between the target walls and the U metal might affect cooling of the target

  8. Genetic engineered color silk: fabrication of a photonics material through a bioassisted technology.

    Science.gov (United States)

    Shimizu, Katsuhiko

    2018-05-15

    Silk produced by the silkworm Bombyx mori is an attractive material because of its luster, smooth and soft texture, conspicuous mechanical strength, good biocompatibility, slow biodegradation, and carbon neutral synthesis. Silkworms have been domesticated and bred for production of better quality and quantity of silk, resulting in the development of sericulture and the textile industry. Silk is generally white, so dyeing is required to obtain colored fiber. However, the dyeing process involves harsh conditions and generates a large volume of waste water, which have environmentally and economically negative impacts. Although some strains produce cocoons that contain pigments derived from the mulberry leaves that they eat, the pigments are distributed in the sericin layer and are lost during gumming. In trials for production of colored silk by feeding silkworms on diets containing dyes, only limited species of dye molecules were incorporated into the silk threads. A method for the generation of transgenic silkworm was established in conjunction with the discovery of green fluorescent protein (GFP), and silkworms carrying the GFP gene spun silk threads that formed cocoons that glowed bright green and still retained the original properties of silk. A wide range of color variation of silk threads has been obtained by replacing the GFP gene with the genes of other fluorescent proteins chosen from the fluorescent protein palette. The genetically modified silk with photonic properties can be processed to form various products including linear threads, 2D fabrics, and 3D materials. The transgenic colored silk could be economically advantageous due to addition of a new value to silk and reduction of cost for water waste, and environmentally preferable for saving water. Here, I review the literature regarding the production methods of fluorescent silk from transgenic silkworms and present examples of genetically modified color silk.

  9. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  12. Polymer X-ray refractive nano-lenses fabricated by additive technology.

    Science.gov (United States)

    Petrov, A K; Bessonov, V O; Abrashitova, K A; Kokareva, N G; Safronov, K R; Barannikov, A A; Ershov, P A; Klimova, N B; Lyatun, I I; Yunkin, V A; Polikarpov, M; Snigireva, I; Fedyanin, A A; Snigirev, A

    2017-06-26

    The present work demonstrates the potential applicability of additive manufacturing to X-Ray refractive nano-lenses. A compound refractive lens with a radius of 5 µm was produced by the two-photon polymerization induced lithography. It was successfully tested at the X-ray microfocus laboratory source and a focal spot of 5 μm was measured. An amorphous nature of polymer material combined with the potential of additive technologies may result in a significantly enhanced focusing performance compared to the best examples of modern X-ray compound refractive lenses.

  13. Ultrafast Fabrication of Flexible Dye-Sensitized Solar Cells by Ultrasonic Spray-Coating Technology

    Science.gov (United States)

    Han, Hyun-Gyu; Weerasinghe, Hashitha C.; Min Kim, Kwang; Soo Kim, Jeong; Cheng, Yi-Bing; Jones, David J.; Holmes, Andrew B.; Kwon, Tae-Hyuk

    2015-09-01

    This study investigates novel deposition techniques for the preparation of TiO2 electrodes for use in flexible dye-sensitized solar cells. These proposed new methods, namely pre-dye-coating and codeposition ultrasonic spraying, eliminate the conventional need for time-consuming processes such as dye soaking and high-temperature sintering. Power conversion efficiencies of over 4.0% were achieved with electrodes prepared on flexible polymer substrates using this new deposition technology and N719 dye as a sensitizer.

  14. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  15. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

    Science.gov (United States)

    Hong, Augustin Jinwoo

    Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

  16. Knitting Technologies And Tensile Properties Of A Novel Curved Flat-Knitted Three-Dimensional Spacer Fabrics

    Directory of Open Access Journals (Sweden)

    Li Xiaoying

    2015-09-01

    Full Text Available This paper introduces a knitting technique for making innovative curved three-dimensional (3D spacer fabrics by the computer flat-knitting machine. During manufacturing, a number of reinforcement yarns made of aramid fibres are inserted into 3D spacer fabrics along the weft direction to enhance the fabric tensile properties. Curved, flat-knitted 3D spacer fabrics with different angles (in the warp direction were also developed. Tensile tests were carried out in the weft and warp directions for the two spacer fabrics (with and without reinforcement yarns, and their stress–strain curves were compared. The results showed that the reinforcement yarns can reduce the fabric deformation and improve tensile stress and dimensional stability of 3D spacer fabrics. This research can help the further study of 3D spacer fabric when applied to composites.

  17. Development of advanced pump impeller fabrication technology using direct nano- ceramic dispersion casting for long time erosion durability

    International Nuclear Information System (INIS)

    Rhee, Chang Kyu; Lee, Min Ku; Park, Jin Ju

    2008-09-01

    Many components of pump impeller of nuclear power plants is generally made of stainless steel and Al-bronze with superior corrosion resistance to sea water. However, they should be replaced by one- to five-year period because of material damage by a very big cavitation impact load, even though their designed durability is twenty years. Especially, in case of Young-Gwang nuclear power plant located at the west sea, damage of components of pump impeller is so critical due to the additional damage by solid particle erosion and hence their replacement period is very short as several months compared to other nuclear power plants. In addition, it is very difficult to maintain and repair the components of pump impeller since there is no database on the exact durability and damage mechanism. Therefore, in this study, fabrication technology of new advanced materials modified by dispersion of nano-carbide and -oxide ceramics into the matrix is developed first. Secondly, technology to estimate the dynamic damage by solid particle erosion is established and hence applied to the prediction of the service life of the components of pump impeller

  18. Semiconductors: A 21st Century Social Studies Topic.

    Science.gov (United States)

    Sunal, Cynthia

    2000-01-01

    Addresses the reasons for exploring semiconductor technology and organic semiconductors in schools for either middle school or secondary students in an interdisciplinary social studies and science environment. Provides background information on transistors and semiconductors. Offers three social studies lessons and related science lessons if an…

  19. Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

    Science.gov (United States)

    Fiegl, G. F.; Bonora, A. C.

    1980-01-01

    The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

  20. Point-of-care solution for osteoporosis management design, fabrication, and validation of new technology

    CERN Document Server

    Khashayar, Patricia

    2017-01-01

    This book addresses the important clinical problem of accurately diagnosing osteoporosis, and analyzes how Bone Turnover Markers (BTMs) can improve osteoporosis detection. In her research, the author integrated microfluidic technology with electrochemical sensing to embody a reaction/detection chamber to measure serum levels of different biomarkers, creating a microfluidic proteomic platform that can easily be translated into a biomarker diagnostic. The Osteokit System, a result of the integration of electrochemical system and microfluidic chips, is a unique design that offers the potential for greater sensitivity. The implementation, feasibility, and specificity of the Osteokit platform is demonstrated in this book, which is appropriate for researchers working on bone biology and mechanics, as well as clinicians.

  1. Untrimmed Low-Power Thermal Sensor for SoC in 22 nm Digital Fabrication Technology

    Directory of Open Access Journals (Sweden)

    Ro'ee Eitan

    2014-12-01

    Full Text Available Thermal sensors (TS are essential for achieving optimized performance and reliability in the era of nanoscale microprocessor and system on chip (SoC. Compiling with the low-power and small die area of the mobile computing, the presented TS supports a wide range of sampling frequencies with an optimized power envelope. The TS supports up to 45 K samples/s, low average power consumption, as low as 20 μW, and small core Si area of 0.013 mm2. Advanced circuit techniques are used in order to overcome process variability, ensuring inaccuracy lower than ±2 °C without any calibration. All this makes the presented thermal sensor a cost-effective, low-power solution for 22 nm nanoscale digital process technology.

  2. Development of manufacturing technology and fabrication of prototype for main coolant pump

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Koon Seok; Han, C.K.; Chei, J.M.; Chung, K.S.; Youn, M.H.; Shin, S.A.; Choi, D.J.; Kim, H.C. [HALLA Industrial Co., Ltd., Pusan (Korea)

    1999-03-01

    This study presents the development of the manufacturing technology for the Main Coolant Pump of the SMART. This report contains the followings; (1) Select axial type pump for the MCP (2) MCP is drived by squirrel-cage induction motor that consisted canned motor type. (3) MCP shaft has three horizontal and one vertical support bearings. (4) Design of several part of the MCP (5) Manufacturing of the performance test motor (6) Design and manufacturing of the speed sensor (7) Procedures for three-axial and five-axial M.C.T., Tig welding and Electron Beam Welding were developed. (8) Conceptional design of the MCP test facility for the performance test under operating conditions. (9) Results of standard weld test specimens according to the ASME section IX. (author). 21 refs., 35 figs., 10 tabs.

  3. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  4. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  5. Inertial confinement fusion target component fabrication and technology development support: Annual report, October 1, 1993--September 30, 1994

    Energy Technology Data Exchange (ETDEWEB)

    Hoppe, M. [ed.

    1995-04-01

    On December 30, 1990, the US Department of Energy entered into a contract with General Atomics (GA) to be the Inertial Confinement Fusion (ICF) Target Component Fabrication and Technology Development Support contractor. During the period, GA was assigned 17 tasks in support of the Inertial Confinement Fusion program and its laboratories. This year they achieved full production capabilities for the micromachining, dimensional characterization and gold plating of hohlraums. They fabricated and delivered 726 gold-plated mandrels of 27 different types to LLNL and 48 gold-plated mandrels of two different types to LANL. They achieved full production capabilities in composite capsule production ad delivered in excess of 240 composite capsules. They continuously work to improve performance and capabilities. They were also directed to dismantle, remove, and disposition all equipment at the previous contractor (KMSF) that had radioactive contamination levels low enough that they could be exposed to the general public without radiological constraints. GA was also directed to receive and store the tritium fill equipment. They assisted LANL in the development of techniques for characterization of opaque targets. They developed deuterated and UV-opaque polymers for use by the University of Rochester`s Laboratory for Laser Energetics (UR/LLE) and devised a triple-orifice droplet generator to demonstrate the controlled-mass nature of the microencapsulation process. The ICF program is anticipating experiments at NIF and the Omega Upgrade. Both facilities will require capsules containing layered D{sub 2} or D-T fuel. They continued engineering and assembly of equipment for a cryogenic target handling system for UR/LLE that will fill, transport, layer, and characterize targets filled with cryogenic deuterium or deuterium-tritium fuel, and insert these cryogenic targets into the OMEGA Upgrade target chamber for laser implosion experiments.

  6. Inertial confinement fusion target component fabrication and technology development support: Annual report, October 1, 1993--September 30, 1994

    International Nuclear Information System (INIS)

    Hoppe, M.

    1995-04-01

    On December 30, 1990, the US Department of Energy entered into a contract with General Atomics (GA) to be the Inertial Confinement Fusion (ICF) Target Component Fabrication and Technology Development Support contractor. During the period, GA was assigned 17 tasks in support of the Inertial Confinement Fusion program and its laboratories. This year they achieved full production capabilities for the micromachining, dimensional characterization and gold plating of hohlraums. They fabricated and delivered 726 gold-plated mandrels of 27 different types to LLNL and 48 gold-plated mandrels of two different types to LANL. They achieved full production capabilities in composite capsule production ad delivered in excess of 240 composite capsules. They continuously work to improve performance and capabilities. They were also directed to dismantle, remove, and disposition all equipment at the previous contractor (KMSF) that had radioactive contamination levels low enough that they could be exposed to the general public without radiological constraints. GA was also directed to receive and store the tritium fill equipment. They assisted LANL in the development of techniques for characterization of opaque targets. They developed deuterated and UV-opaque polymers for use by the University of Rochester's Laboratory for Laser Energetics (UR/LLE) and devised a triple-orifice droplet generator to demonstrate the controlled-mass nature of the microencapsulation process. The ICF program is anticipating experiments at NIF and the Omega Upgrade. Both facilities will require capsules containing layered D 2 or D-T fuel. They continued engineering and assembly of equipment for a cryogenic target handling system for UR/LLE that will fill, transport, layer, and characterize targets filled with cryogenic deuterium or deuterium-tritium fuel, and insert these cryogenic targets into the OMEGA Upgrade target chamber for laser implosion experiments

  7. Study of neural cells on organic semiconductor ultra thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bystrenova, Eva; Tonazzini, Ilaria; Stoliar, Pablo; Greco, Pierpaolo; Lazar, Adina; Dutta, Soumya; Dionigi, Chiara; Cacace, Marcello; Biscarini, Fabio [ISMN-CNR, Bologna (Italy); Jelitai, Marta; Madarasz, Emilia [IEM- HAS, Budapest (Hungary); Huth, Martin; Nickel, Bert [LMU, Munich (Germany); Martini, Claudia [Dept. PNPB, Univ. of Pisa (Italy)

    2008-07-01

    Many technological advances are currently being developed for nano-fabrication, offering the ability to create and control patterns of soft materials. We report the deposition of cells on organic semiconductor ultra-thin films. This is a first step towards the development of active bio/non bio systems for electrical transduction. Thin films of pentacene, whose thickness was systematically varied, were grown by high vacuum sublimation. We report adhesion, growth, and differentiation of human astroglial cells and mouse neural stem cells on an organic semiconductor. Viability of astroglial cells in time was measured as a function of the roughness and the characteristic morphology of ultra thin organic film, as well as the features of the patterned molecules. Optical fluorescence microscope coupled to atomic force microscope was used to monitor the presence, density and shape of deposited cells. Neural stem cells remain viable, differentiate by retinoic acid and form dense neuronal networks. We have shown the possibility to integrate living neural cells on organic semiconductor thin films.

  8. Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

    Science.gov (United States)

    Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

    2018-04-01

    Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

  9. Mineralogical and technology characterization of raw materials of clay used for ceramic blocks fabrication

    International Nuclear Information System (INIS)

    Campos, N.Q.; Tapajos, N.S.

    2012-01-01

    In the state of Para, the red ceramic industry has several segments highly generators of jobs and a strong social appeal. With so many companies focused on this productive sector emerge, but many without any administration quality. Therefore, this study focused the technological and mineralogical characterization of the raw material used in the manufacture of ceramic blocks, by Ceramica Vermelha Company, located in the district of Inhangapi-PA. The raw material was obtained by the techniques of X-ray diffraction (XRD) to determine the present crystalline phases through an accurate and efficient procedure, where it was possible to identify the peaks relating to montmorillonite, illite and kaolinite clay in the sample, and kaolinite and quartz in the sample laterite. Another important result was the absorption of water, with average satisfactory according to the standards. According to a sieve analysis, the laterite the sand fraction showed a greater extent compared to the other, while the clay silt exceeding 80% was found to be too plastic material. The resistance to compression, the results were below the required by the standard, suggesting more accurate test methods. (author)

  10. Fabrication of TBMs cooling structures demonstrators using additive manufacturing (AM) technology and HIP

    Energy Technology Data Exchange (ETDEWEB)

    Ordás, Nerea, E-mail: nordas@ceit.es [CEIT-IK4 and Tecnun (University of Navarra), Donostia-San Sebastián (Spain); Ardila, Luis Carlos [IK4-LORTEK Joining Research Institute, Ordizia (Spain); Iturriza, Iñigo [CEIT-IK4 and Tecnun (University of Navarra), Donostia-San Sebastián (Spain); Garcianda, Fermín; Álvarez, Pedro [IK4-LORTEK Joining Research Institute, Ordizia (Spain); García-Rosales, Carmen [CEIT-IK4 and Tecnun (University of Navarra), Donostia-San Sebastián (Spain)

    2015-10-15

    Highlights: • TBM geometrically relevant component components were obtained by addtive manufacturing. • P91, a ferritic–martensitic steel metallurgically similar to EUROFER was used. • Dense core walls were obtained by SLM, though contour of cooling channel walls are slightly porous. • HIP after SLM is effective in removing the porosity and homogenizing the microstructure. • After HIP + normalizing + tempering mechanical behavior is similar to P91 as received. - Abstract: Several mock-ups, each of them consisting of six rectangular channels with dimensions according to the EU Test Blanket Modules (TBMs) specifications, were manufactured by selective laser melting (SLM) technology using P91, a ferritic–martensitic 9%Cr–1%Mo–V steel with a metallurgical behavior similar to EUROFER, the reference structural material for DEMO blanket concepts. SLM parameters led to an as-built density of 99.35% Theoretical Density (TD) that increased up to 99.74% after hot isostatic pressing (HIP). Dimensional control showed that the differences between the original design and the component are below 100 μm. By the appropriate selection of normalization and tempering parameters it was possible to obtain a material fulfilling P91 specification. The microstructure was investigated after SLM, HIP and normalizing and tempering treatments. In all cases, it consisted of thin martensitic laths. Subsize tensile samples were extracted from the mock-ups to measure the mechanical tensile properties after each step of the manufacturing process. The effect of thermal treatments on hardness was also evaluated.

  11. Development of the continuous casting technology for fabrication of the tubular fuels

    International Nuclear Information System (INIS)

    Kim, H. S.; Lee, Y. S.; Kim, C. K.; Lee, D. B.; Oh, S. J.

    2003-01-01

    In the irradiation test of the U-Mo dispersed nuclear fuel that is used as nuclear fuels for research reactors, it was recognized that the swelling due to reaction between U-Mo particle and Al matrix caused some failures of the fuel claddings. The development of new style nuclear fuel that could minimize the reaction between U-Mo particles and Al matrix was needed. Tube style nuclear fuel was judged to be suitable as new style nuclear fuel. We targeted to make U-Mo tube of diameter 10mm, thinner than 1mm thick, because temperature distribution of tube style nuclear fuel will be expected to have a good performance. We used continuous casting technology to make tube style nuclear fuel. In this research, we have tried to make tube using copper before we make U-Mo tube style nuclear fuel by continuous casting method. As a result of the experiment, we succeeded to make copper tube of diameter 10mm, thickness 1mm

  12. Semiconductor applications of plasma immersion ion implantation ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 25; Issue 6. Semiconductor applications of plasma immersion ion implantation technology ... Department of Electronic Science, Kurukshetra University, Kurukshetra 136 119, India ...

  13. Fiscal 1998 joint R and D project on industrial science and technology with university. Research report on the production process of semiconductor devices by Cat-CVD (Development of practical technology for rational use of energy); 1998 nendo daigaku renkei sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika kankei gijutsu jitsuyoka kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-03-01

    The Cat-CVD method is in verification test to establish it as production process of various semiconductor devices such as Ga-As IC, ferroelectric IC, Si IC, and TFT. This paper outlines the research results in fiscal 1998. Study was made on concept design of the Cat-CVD equipment for formation of Ga-As protective film, and basic technology for formation of SiN{sub x} film. Although reducing gas is used for deposition of SiN{sub x} film, anxious modification of oxide ferroelectric materials was avoided by substrate temperature control. Design and fabrication of the CVD equipment for Si ICs were also studied. The equipment was made of Al to control degassing as low as possible. As for production of TFT for LCD, formation technology of high-quality insulating thin film for low-temperature poly-Si TFT by CVD method, and formation of advanced insulating thin film and advanced poly- Si thin film were studied. A large-size deposition method of TFT insulating film, and low-temperature formation technology of poly-Si were also studied. (NEDO)

  14. The Fabrication Technology Development of Uniform U and U-Mo Foil by Twin Roll Casting

    International Nuclear Information System (INIS)

    Kim, C. K.; Kim, K. H.; Lee, Y. S.; Woo, Y. M.; Kim, J. D.; Oh, J. M.; Sim, M. S.

    2012-01-01

    Uranium foil samples, of which the technology was developed by KAERI around 2000, were distributed to 6 countries including USA in connection with CRP of IAEA. A problem of thickness irregularity was issued so that cold work was done on it. Due to the pin hole and preferred orientation occurrence an additional development project was raised. It was presumed that the irregularity would be influenced by the eddy flow of the melt. So the melt feeding system was changed from pressurized melt flow to gravity-forced flow for more stable melt flow. And then It was tried that the bulgies on the foil surface were eliminated by deforming with a pressing roll. To save the production cost the expensive quartz crucible was replaced with a common graphite plugging crucible system with repeatable use. The loss of very expensive LEU material from melt leak of open nozzle in quartz crucible could be excluded. A new foil collection winding system was adopted so that the quickly coming-out foil could be taken without rumpling. The equipment was test-run with Cu as surrogate. Some drawbacks found during test-running were solved by modifying several parts. Cu foils could be produced with optimized conditions successfully. DU metal was also used for test-running the modified equipment and then some related modifications were done. Finally DU foils meeting the requesting specification could be produced. The length was longer than 10 m. The foil thickness ranged from 140 μm to 300 μm. On observation and measurement the thickness homogeneity was evaluated to be improved a little

  15. Design of 5.8 GHz Integrated Antenna on 180nm Complementary Metal Oxide Semiconductor (CMOS) Technology

    Science.gov (United States)

    Razak, A. H. A.; Shamsuddin, M. I. A.; Idros, M. F. M.; Halim, A. K.; Ahmad, A.; Junid, S. A. M. Al

    2018-03-01

    This project discusses the design and simulation performances of integrated loop antenna. Antenna is one of the main parts in any wireless radio frequency integrated circuit (RFIC). Naturally, antenna is the bulk in any RFIC design. Thus, this project aims to implement an integrated antenna on a single chip making the end product more compact. This project targets 5.8 GHz as the operating frequency of the integrated antenna for a transceiver module based on Silterra CMOS 180nm technology. The simulation of the antenna was done by using High Frequency Structure Simulator (HFSS). This software is industrial standard software that been used to simulate all electromagnetic effect including antenna simulation. This software has ability to simulate frequency at range of 100 MHz to 4 THz. The simulation set up in 3 dimension structure with driven terminal. The designed antenna has 1400um of diameter and placed on top metal layer. Loop configuration of the antenna has been chosen as the antenna design. From the configuration, it is able to make the chip more compact. The simulation shows that the antenna has single frequency band at center frequency 5.8 GHz with -48.93dB. The antenna radiation patterns shows, the antenna radiate at omnidirectional. From the simulation result, it could be concluded that the antenna have a good radiation pattern and propagation for wireless communication.

  16. Semiconductor laser using multimode interference principle

    Science.gov (United States)

    Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

    2018-01-01

    Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

  17. Metal/Semiconductor and Transparent Conductor/Semiconductor Heterojunctions in High Efficient Photoelectric Devices: Progress and Features

    Directory of Open Access Journals (Sweden)

    M. Melvin David Kumar

    2014-01-01

    Full Text Available Metal/semiconductor and transparent conductive oxide (TCO/semiconductor heterojunctions have emerged as an effective modality in the fabrication of photoelectric devices. This review is following a recent shift toward the engineering of TCO layers and structured Si substrates, incorporating metal nanoparticles for the development of next-generation photoelectric devices. Beneficial progress which helps to increase the efficiency and reduce the cost, has been sequenced based on efficient technologies involved in making novel substrates, TCO layers, and electrodes. The electrical and optical properties of indium tin oxide (ITO and aluminum doped zinc oxide (AZO thin films can be enhanced by structuring the surface of TCO layers. The TCO layers embedded with Ag nanoparticles are used to enhance the plasmonic light trapping effect in order to increase the energy harvesting nature of photoelectric devices. Si nanopillar structures which are fabricated by photolithography-free technique are used to increase light-active surface region. The importance of the structure and area of front electrodes and the effect of temperature at the junction are the value added discussions in this review.

  18. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  19. Fabrication of artificial arteriovenous fistula and analysis of flow field and shear stress by using μ-PIV technology

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sun Cheol; Kim, Hyun Kyu [Div. of Vascular Surgery, Dept. of Surgery, College of Medicine, The Catholic University of Korea, Seoul (Korea, Republic of); Song, Ryun Geun; Kim, Sun Ho; Lee, Jin Kee [School of Mechanical Engineering, Sungkyunkwan University, Suwon (Korea, Republic of); Kim, Seung Hyun [School of Engineering, Brown University, Providence (United States)

    2016-12-15

    Radio-cephalic arteriovenous fistula (RC-AVF) is an operation performed to achieve vascular access for hemodialysis. Although RC-AVF is a reliable and well-known method, this technique presents high rates of early failure depending on the vessel condition. These failures are due to blood shear stress around the anastomosis site and the vascular access failure caused by thrombosis secondary to stenosis formation, as well as vascular access reocclusion after percutaneous interventions. In this work, we fabricate in vitro 3D RC-AVF by using polydimethylsiloxane and 3D printing technology to understand the underlying mechanism and predict AVF failure. Micro- Particle image velocimetry (μ-PIV) focusing on the cardiac pulse cycle is used to measure the velocity field within the artificial blood vessel. Results are confirmed by numerical simulation. Accordingly, the in vitro AVF model agrees well with the simulations. Overall, this research would provide the future possibility of using the proposed method to reduce in vivo AVF failure for various conditions.

  20. Inertial confinement fusion target component fabrication and technology development support. Annual report, October 1, 1994--September 30, 1995

    International Nuclear Information System (INIS)

    Hoppe, M.

    1996-05-01

    On December 30, 1990, the US Department of Energy entered into a contract with General Atomics (GA) to be the Inertial Confinement Fusion (ICF) Target Component Fabrication and Technology Development Support contractor. This report documents the technical activities of the period October 1, 1994 through September 30, 1995. During this period, GA was assigned 15 tasks in support of the Inertial Confinement Fusion program and its laboratories. A portion of the effort on these tasks included providing direct ''Onsite Support'' at Lawrence Livermore National Laboratory (LLNL), Los Alamos National Laboratory (LANL), and Sandia National Laboratory Albuquerque (SNLA). The ICF program is anticipating experiments at the National Ignition Facility (NIF) and the OMEGA Upgrade. Both facilities will require capsules containing layered D 2 or deuterium-tritium (D-T) fuel. The authors are part of the National Cryogenic Target Program to create and demonstrate viable ways to generate and characterize cryogenic layers. Progress has been made on ways to both create viable layers and to characterize them. They continued engineering, assembly and testing of equipment for a cryogenic target handling system for University of Rochester's Laboratory for Laser Energetics (UR/LLE) that will fill, transport, layer, and characterize targets filled with cryogenic fuel, and insert these cryogenic targets into the OMEGA Upgrade target chamber for laser implosion experiments. This report summarizes and documents the technical progress made on these tasks

  1. Novel strategy for immunomodulation: Dissolving microneedle array encapsulating thymopentin fabricated by modified two-step molding technology.

    Science.gov (United States)

    Lin, Shiqi; Cai, Bingzhen; Quan, Guilan; Peng, Tingting; Yao, Gangtao; Zhu, Chune; Wu, Qiaoli; Ran, Hao; Pan, Xin; Wu, Chuanbin

    2018-01-01

    Thymopentin (TP5) is commonly used in the treatment for autoimmune diseases, with a short plasma half-life (30s) and a long treatment period (7 days to 6 months). It is usually administrated by syringe injection, resulting in compromised patient compliance. Dissolving microneedle array (DMNA) offers a superior approach for transdermal delivery of biological macromolecules, as it allows painless penetration through the stratum corneum and generates minimal biohazardous waste after dissolving in the skin. Despite recent advances in DMNA as a novel approach for transdermal drug delivery, problem of insufficient mechanical strength remains to be solved. In this study, TP5-loaded DMNA (TP5-DMNA) was uniquely developed using a modified two-step molding technology. The higher mechanical strength was furnished by employing bovine serum albumin (BSA) as a co-material to fabricate the needles. The obtained TP5-DMNA containing BSA displayed better skin penetration and higher drug loading efficiency than that without BSA. The in vivo pharmacodynamics study demonstrated that TP5-DMNA had comparative effect on immunomodulation to intravenous injection of TP5, in terms of ameliorating the CD4+/CD8+ ratio, SOD activity and MDA value to the basal level. Only mild irritation was observed at the site of administration. These results suggest that the novel TP5-DMNA utilizing BSA provides an alternative approach for convenient and safe transdermal delivery of TP5, which is a promising administration strategy for future clinical application. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. Cellular Energy Absorbing TRIP-Steel/Mg-PSZ Composite: Honeycomb Structures Fabricated by a New Extrusion Powder Technology

    Directory of Open Access Journals (Sweden)

    Ulrich Martin

    2010-01-01

    Full Text Available Lightweight linear cellular composite materials on basis of austenite stainless TRIP- (TRansformation Induced Plasticity- steel as matrix with reinforcements of MgO partially stabilized zirconia (Mg-PSZ are described. Two-dimensional cellular materials for structural applications are conventionally produced by sheet expansion or corrugation processes. The presented composites are fabricated by a modified ceramic extrusion powder technology. Characterization of the microstructure in as-received and deformed conditions was carried out by optical and scanning electron microscopy. Magnetic balance measurements and electron backscatter diffraction (EBSD were used to identify the deformation-induced martensite evolution in the cell wall material. The honeycomb composite samples exhibit an increased strain hardening up to a certain engineering compressive strain and an extraordinary high specific energy absorption per unit mass and unit volume, respectively. Based on improved property-to-weight ratio such linear cellular structures will be of interest as crash absorbers or stiffened core materials for aerospace, railway, or automotive applications.

  3. Microcontact printing technology as a method of fabrication of patterned self-assembled monolayers for application in nanometrology

    Science.gov (United States)

    Pałetko, Piotr; Moczała, Magdalena; Janus, Paweł; Grabiec, Piotr; Gotszalk, Teodor

    2013-07-01

    This paper is focused on manufacture technology of molecular self-assembled monolayers (SAM) using microcontact printing (μCP) techniqe. This technique, due to its low-cost and simplicity, is a very attractive one for further development of molecular electronics and nanotechnology. The SAM can be produced on gold or silicon oxide using thiol and silane based chemistry respectively[1]. The μCP techniques allow the imposition of molecular structures in specific areas. The chemical properties of the fabricated layers depend on the functional groups of tail molecules. Such structures can be used as chemical receptors or as interface between the substrate and the biosensor receptors [2]. Architecture of the tail molecule determines the chemical reactivity and hydrophilic or hydrophobic properties. In addition it modifies the tribological properties [4] and electrical structure parameters, such as contact potential diference (CPD) [5]. The height of the SAM structure containing carbon chain is highly dependent on the length and type of binding molecules to the substrate, which enables application of the μCP SAM structures in height metrology. The results of these studies will be presented in the work.

  4. Inertial confinement fusion target component fabrication and technology development support. Annual report, October 1, 1994--September 30, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Hoppe, M. [ed.

    1996-05-01

    On December 30, 1990, the US Department of Energy entered into a contract with General Atomics (GA) to be the Inertial Confinement Fusion (ICF) Target Component Fabrication and Technology Development Support contractor. This report documents the technical activities of the period October 1, 1994 through September 30, 1995. During this period, GA was assigned 15 tasks in support of the Inertial Confinement Fusion program and its laboratories. A portion of the effort on these tasks included providing direct ``Onsite Support`` at Lawrence Livermore National Laboratory (LLNL), Los Alamos National Laboratory (LANL), and Sandia National Laboratory Albuquerque (SNLA). The ICF program is anticipating experiments at the National Ignition Facility (NIF) and the OMEGA Upgrade. Both facilities will require capsules containing layered D{sub 2} or deuterium-tritium (D-T) fuel. The authors are part of the National Cryogenic Target Program to create and demonstrate viable ways to generate and characterize cryogenic layers. Progress has been made on ways to both create viable layers and to characterize them. They continued engineering, assembly and testing of equipment for a cryogenic target handling system for University of Rochester`s Laboratory for Laser Energetics (UR/LLE) that will fill, transport, layer, and characterize targets filled with cryogenic fuel, and insert these cryogenic targets into the OMEGA Upgrade target chamber for laser implosion experiments. This report summarizes and documents the technical progress made on these tasks.

  5. A comparative study of the mechanical properties and the behavior of carbon and boron in stainless steel cladding tubes fabricated by PM HIP and traditional technologies

    Energy Technology Data Exchange (ETDEWEB)

    Shulga, A.V., E-mail: avshulga@mephi.ru [Moscow Engineering Physics Institute, State University, 31 Kashirskoe Sh., Moscow 115409 (Russian Federation)

    2013-03-15

    Highlights: ► The ring tensile test method was optimized and successfully used. ► The cladding tubes fabricated by PM HIP and traditional technologies were tested. ► Improvement of the cladding tubes properties fabricated by PM HIP was found. ► Correlation of the homogeneity of carbon, boron with the properties was revealed. -- Abstract: The ring tensile test method was optimized and successfully used to obtain precise data for specimens of the cladding tubes of AISI type 316 austenitic stainless steels and ferritic–martensitic stainless steel. The positive modifications in the tensile properties of the stainless steel cladding tubes fabricated by powder metallurgy and hot isostatic pressing of melt atomized powders (PM HIP) when compared with the cladding tubes produced by traditional technology were found. Presently, PM HIP is also used in the fabrication of oxide dispersion strengthened (ODS) ferritic–martensitic steels. The high degree of homogeneity of the distribution of carbon and boron as well the high dispersivity of the phase-structure elements in the specimens manufactured via PM HIP were determined by direct autoradiography methods. These results correlate well with the increase of the tensile properties of the specimens produced by PM HIP technology.

  6. Effective dose estimation for pediatric upper gastrointestinal examinations using an anthropomorphic phantom set and metal oxide semiconductor field-effect transistor (MOSFET) technology.

    Science.gov (United States)

    Emigh, Brent; Gordon, Christopher L; Connolly, Bairbre L; Falkiner, Michelle; Thomas, Karen E

    2013-09-01

    There is a need for updated radiation dose estimates in pediatric fluoroscopy given the routine use of new dose-saving technologies and increased radiation safety awareness in pediatric imaging. To estimate effective doses for standardized pediatric upper gastrointestinal (UGI) examinations at our institute using direct dose measurement, as well as provide dose-area product (DAP) to effective dose conversion factors to be used for the estimation of UGI effective doses for boys and girls up to 10 years of age at other centers. Metal oxide semiconductor field-effect transistor (MOSFET) dosimeters were placed within four anthropomorphic phantoms representing children ≤10 years of age and exposed to mock UGI examinations using exposures much greater than used clinically to minimize measurement error. Measured effective dose was calculated using ICRP 103 weights and scaled to our institution's standardized clinical UGI (3.6-min fluoroscopy, four spot exposures and four examination beam projections) as determined from patient logs. Results were compared to Monte Carlo simulations and related to fluoroscope-displayed DAP. Measured effective doses for standardized pediatric UGI examinations in our institute ranged from 0.35 to 0.79 mSv in girls and were 3-8% lower for boys. Simulation-derived and measured effective doses were in agreement (percentage differences  0.18). DAP-to-effective dose conversion factors ranged from 6.5 ×10(-4) mSv per Gy-cm(2) to 4.3 × 10(-3) mSv per Gy-cm(2) for girls and were similarly lower for boys. Using modern fluoroscopy equipment, the effective dose associated with the UGI examination in children ≤10 years at our institute is MOSFETs, which were shown to agree with Monte Carlo simulated doses.

  7. Use of radioactive tracers in the semiconductor industry

    International Nuclear Information System (INIS)

    Akerman, Karol

    1975-01-01

    Manufacture of the semiconductor materials comprises production and purification of the raw materials (GeC14 or SiHC13), purification of the elemental semiconductors by metallurgical methods (including zone melting), production and doping of single crystals, dividing the crystals into slices of suitable size, formation of p-n junctions and fabrication of the finished semiconductor devices. In the sequence of operations, the behavior of very small quantities of an element must be monitored, and radioactive tracers are often used to solve these problems. Examples are given of the use of radioactive tracers in the semiconductor industry

  8. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  9. FY 2000 report on the development of ultra low loss power element technology. Commercialization of next generation power semiconductor device; 2000 nendo choteisonshitsu denryoku soshi gijutsu kaihatsu seika hokokusho. Jisedai power handotai device jitsuyoka chosa

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    For the purpose of contributing to the promotion of development of ultra low loss power element technology, survey was conducted on the present situation, future, etc. of various technologies/systems related to power semiconductor devices. In the industrial equipment field, it is predicted that power semiconductor devices will be increased in the field of application by enlargement of the defense field of IGBT, new MOS structure elements, etc. In the field of home appliances, possibilities are expected of switching loss reduction and electric noise reduction by making SiC high speed diode. As to the space photovoltaic power generation, SiC is expected for various semiconductors such as solar cells, FET for transmitter/amplifier of radio power electric transmission use micro waves, etc. Concerning the radio communication system plan using stratosphere platform, there are technical problems on communication equipment such as antenna and RF circuit, and the role of SiC device is expected to be large. The society where the electrification rate is 80% and fuel cell vehicles are used is a new paradigm, and it is necessary and indispensable to commercialize ultra low loss power elements using SiC. (NEDO)

  10. Controlling Molecular Doping in Organic Semiconductors.

    Science.gov (United States)

    Jacobs, Ian E; Moulé, Adam J

    2017-11-01

    The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Mass production compatible fabrication techniques of single-crystalline silver metamaterials and plasmonics devices

    Science.gov (United States)

    Rodionov, Ilya A.; Baburin, Alexander S.; Zverev, Alexander V.; Philippov, Ivan A.; Gabidulin, Aidar R.; Dobronosova, Alina A.; Ryzhova, Elena V.; Vinogradov, Alexey P.; Ivanov, Anton I.; Maklakov, Sergey S.; Baryshev, Alexander V.; Trofimov, Igor V.; Merzlikin, Alexander M.; Orlikovsky, Nikolay A.; Rizhikov, Ilya A.

    2017-08-01

    During last 20 years, great results in metamaterials and plasmonic nanostructures fabrication were obtained. However, large ohmic losses in metals and mass production compatibility still represent the most serious challenge that obstruct progress in the fields of metamaterials and plasmonics. Many recent research are primarily focused on developing low-loss alternative materials, such as nitrides, II-VI semiconductor oxides, high-doped semiconductors, or two-dimensional materials. In this work, we demonstrate that our perfectly fabricated silver films can be an effective low-loss material system, as theoretically well-known. We present a fabrication technology of plasmonic and metamaterial nanodevices on transparent (quartz, mica) and non-transparent (silicon) substrates by means of e-beam lithography and ICP dry etch instead of a commonly-used focused ion beam (FIB) technology. We eliminate negative influence of litho-etch steps on silver films quality and fabricate square millimeter area devices with different topologies and perfect sub-100 nm dimensions reproducibility. Our silver non-damage fabrication scheme is tested on trial manufacture of spasers, plasmonic sensors and waveguides, metasurfaces, etc. These results can be used as a flexible device manufacture platform for a broad range of practical applications in optoelectronics, communications, photovoltaics and biotechnology.

  12. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  13. Will Future Measurement Needs of the Semiconductor Industry Be Met?

    Science.gov (United States)

    Bennett, Herbert S

    2007-01-01

    We discuss the ability of the nation's measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry's powerful impact in the world's macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry.

  14. A comparative study of the mechanical properties and the behavior of carbon and boron in stainless steel cladding tubes fabricated by PM HIP and traditional technologies

    Science.gov (United States)

    Shulga, A. V.

    2013-03-01

    The ring tensile test method was optimized and successfully used to obtain precise data for specimens of the cladding tubes of AISI type 316 austenitic stainless steels and ferritic-martensitic stainless steel. The positive modifications in the tensile properties of the stainless steel cladding tubes fabricated by powder metallurgy and hot isostatic pressing of melt atomized powders (PM HIP) when compared with the cladding tubes produced by traditional technology were found. Presently, PM HIP is also used in the fabrication of oxide dispersion strengthened (ODS) ferritic-martensitic steels. The high degree of homogeneity of the distribution of carbon and boron as well the high dispersivity of the phase-structure elements in the specimens manufactured via PM HIP were determined by direct autoradiography methods. These results correlate well with the increase of the tensile properties of the specimens produced by PM HIP technology.

  15. Frontier of nanometer devices. Part 2. Trends in nanostructure fabrication technology. Nanometa debaisu kenkyu saizensen. 2. Nanometa bisai kako gijutsu no genjo to tenbo

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, S [NEC Corp., Tokyo (Japan)

    1994-06-20

    Nanometer fabrication technology shows a remarkable progress. Conventional electric beam enables 10 nm lithography and the scanning transmission electron microscopy (STEM) and the scanning tunneling microscopy (STM) enable fabrication below 10 nm even to the level of atom and molecule manipulation. This paper describes the recent trends in nanotechnology (nanolithography and nano dry etching) by the use of electron and ion beams. In the atom technology by the use of STM, studies are in progress on processing with atomic force, electric field evaporation and chemical reaction. Moreover, this paper describes recent development in nano natural lithography, self-formation lithography, atomic layer lithography and nanolithography using electron beam holography. The present state and future prospects are discussed. 31 refs., 10 figs., 1 tab.

  16. Elaboration of fabrication technology of ITO/CdS/CdTe solar cells on flexible polymer substrates

    International Nuclear Information System (INIS)

    Potlog, T.; Spalatu, N.; Capros, N.

    2007-01-01

    The development of high efficiency, stable, lightweight and flexible solar cell is important for terrestrial and space applications. We have developed a novel process to make solar cells on flexible polymer sheets. A thin layer of CdTe compound semiconductor is used for the absorption of solar light and generation of electrical current. In this work the solar electricity conversion efficiency of 4,66% is the highest efficiency reported for a solar cell grown on a polymer sheet. (authors)

  17. Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.

    Science.gov (United States)

    Sun, Min-Chul; Kim, Garam; Kim, Sang Wan; Kim, Hyun Woo; Kim, Hyungjin; Lee, Jong-Ho; Shin, Hyungcheol; Park, Byung-Gook

    2012-07-01

    In order to extend the conventional low power Si CMOS technology beyond the 20-nm node without SOI substrates, we propose a novel co-integration scheme to build horizontal- and vertical-channel MOSFETs together and verify the idea using TCAD simulations. From the fabrication viewpoint, it is highlighted that this scheme provides additional vertical devices with good scalability by adding a few steps to the conventional CMOS process flow for fin formation. In addition, the benefits of the co-integrated vertical devices are investigated using a TCAD device simulation. From this study, it is confirmed that the vertical device shows improved off-current control and a larger drive current when the body dimension is less than 20 nm, due to the electric field coupling effect at the double-gated channel. Finally, the benefits from the circuit design viewpoint, such as the larger midpoint gain and beta and lower power consumption, are confirmed by the mixed-mode circuit simulation study.

  18. Rapid Three-Dimensional Printing in Water Using Semiconductor-Metal Hybrid Nanoparticles as Photoinitiators.

    Science.gov (United States)

    Pawar, Amol Ashok; Halivni, Shira; Waiskopf, Nir; Ben-Shahar, Yuval; Soreni-Harari, Michal; Bergbreiter, Sarah; Banin, Uri; Magdassi, Shlomo

    2017-07-12

    Additive manufacturing processes enable fabrication of complex and functional three-dimensional (3D) objects ranging from engine parts to artificial organs. Photopolymerization, which is the most versatile technology enabling such processes through 3D printing, utilizes photoinitiators that break into radicals upon light absorption. We report on a new family of photoinitiators for 3D printing based on hybrid semiconductor-metal nanoparticles. Unlike conventional photoinitiators that are consumed upon irradiation, these particles form radicals through a photocatalytic process. Light absorption by the semiconductor nanorod is followed by charge separation and electron transfer to the metal tip, enabling redox reactions to form radicals in aerobic conditions. In particular, we demonstrate their use in 3D printing in water, where they simultaneously form hydroxyl radicals for the polymerization and consume dissolved oxygen that is a known inhibitor. We also demonstrate their potential for two-photon polymerization due to their giant two-photon absorption cross section.

  19. Effective dose estimation for pediatric upper gastrointestinal examinations using an anthropomorphic phantom set and metal oxide semiconductor field-effect transistor (MOSFET) technology

    International Nuclear Information System (INIS)

    Emigh, Brent; Gordon, Christopher L.; Falkiner, Michelle; Thomas, Karen E.; Connolly, Bairbre L.

    2013-01-01

    There is a need for updated radiation dose estimates in pediatric fluoroscopy given the routine use of new dose-saving technologies and increased radiation safety awareness in pediatric imaging. To estimate effective doses for standardized pediatric upper gastrointestinal (UGI) examinations at our institute using direct dose measurement, as well as provide dose-area product (DAP) to effective dose conversion factors to be used for the estimation of UGI effective doses for boys and girls up to 10 years of age at other centers. Metal oxide semiconductor field-effect transistor (MOSFET) dosimeters were placed within four anthropomorphic phantoms representing children ≤10 years of age and exposed to mock UGI examinations using exposures much greater than used clinically to minimize measurement error. Measured effective dose was calculated using ICRP 103 weights and scaled to our institution's standardized clinical UGI (3.6-min fluoroscopy, four spot exposures and four examination beam projections) as determined from patient logs. Results were compared to Monte Carlo simulations and related to fluoroscope-displayed DAP. Measured effective doses for standardized pediatric UGI examinations in our institute ranged from 0.35 to 0.79 mSv in girls and were 3-8% lower for boys. Simulation-derived and measured effective doses were in agreement (percentage differences 0.18). DAP-to-effective dose conversion factors ranged from 6.5 x 10 -4 mSv per Gy-cm 2 to 4.3 x 10 -3 mSv per Gy-cm 2 for girls and were similarly lower for boys. Using modern fluoroscopy equipment, the effective dose associated with the UGI examination in children ≤10 years at our institute is < 1 mSv. Estimations of effective dose associated with pediatric UGI examinations can be made for children up to the age of 10 using the DAP-normalized conversion factors provided in this study. These estimates can be further refined to reflect individual hospital examination protocols through the use of direct organ

  20. Laser Cooling of 2-6 Semiconductors

    Science.gov (United States)

    2016-08-12

    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards