Purcell effect in an organic-inorganic halide perovskite semiconductor microcavity system

International Nuclear Information System (INIS)

Wang, Jun; Wang, Yafeng; Hu, Tao; Wu, Lin; Shen, Xuechu; Chen, Zhanghai; Cao, Runan; Xu, Fei; Da, Peimei; Zheng, Gengfeng; Lu, Jian

2016-01-01

Organic-inorganic halide perovskite semiconductors with the attractive physics properties, including strong photoluminescence (PL), huge oscillator strengths, and low nonradiative recombination losses, are ideal candidates for studying the light-matter interaction in nanostructures. Here, we demonstrate the coupling of the exciton state and the cavity mode in the lead halide perovskite microcavity system at room temperature. The Purcell effect in the coupling system is clearly observed by using angle-resolved photoluminescence spectra. Kinetic analysis based on time-resolved PL reveals that the spontaneous emission rate of the halide perovskite semiconductor is significantly enhanced at resonance of the exciton energy and the cavity mode. Our results provide the way for developing electrically driven organic polariton lasers, optical devices, and on-chip coherent quantum light sources

Polariton solitons and nonlinear localized states in a one-dimensional semiconductor microcavity

Science.gov (United States)

Chen, Ting-Wei; Cheng, Szu-Cheng

2018-01-01

This paper presents numerical studies of cavity polariton solitons (CPSs) in a resonantly pumped semiconductor microcavity with an imbedded spatial defect. In the bistable regime of the well-known homogeneous polariton condensate, with proper incident wave vector and pump strength, bright and/or dark cavity solitons can be found in the presence of a spatially confined potential. The minimum pump strength required to observe the CPSs or nonlinear localized states in this parametric pump scheme is therefore reported.

Polarization-dependent solitons in the strong coupling regime of semiconductor microcavities

International Nuclear Information System (INIS)

Fu, Y.; Zhang, W.L.; Wu, X.M.

2015-01-01

This paper studies the influence of polarization on formation of vectorial polariton soliton in semiconductor microcavities through numerical simulations. It is found that the polariton solution greatly depends on the polarization of both the pump and exciting fields. By properly choosing the pump and exciting field polarization, bright–bright or bright–dark vectorial polariton solitons can be formed. Especially, when the input conditions of pump or exciting field of the two opposite polarizations are slightly asymmetric, an interesting phenomenon that the dark solitons transform into bright solitons occurs in the branch of soliton solutions.

Magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity

International Nuclear Information System (INIS)

Zhang, Chuanyi; Zhang, Weifeng

2015-01-01

We theoretically study the magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity. A critical magnetic field is obtained, and the bistability appears if a magnetic field is greater than the critical value. For a positive energy detuning of the pump from the bare exciton polaritons, one bistability loop first emerges, then it divides into two loops, and finally one of them vanishes with the increasing magnetic field. This phenomenon originates from the magnetic-field modulated interactions for opposite spins. In the variational process, there are two important effects: one is a logic gate with a small variation of the excitation laser, and the other is a spin texture like skyrmion and this texture is periodic if the energy detuning varies periodically in real space, which is useful for designing the spin-dependent optoelectronic devices. - Highlights: • We study the bistability induced by a magnetic field in a microcavity. • One bistability loop can divide into two, and then the two loops return to one. • A spin texture like skyrmion and logic gate arise in the variation of bistability loop

Dynamical Fano-Like Interference between Rabi Oscillations and Coherent Phonons in a Semiconductor Microcavity System.

Science.gov (United States)

Yoshino, S; Oohata, G; Mizoguchi, K

2015-10-09

We report on dynamical interference between short-lived Rabi oscillations and long-lived coherent phonons in CuCl semiconductor microcavities resulting from the coupling between the two oscillations. The Fourier-transformed spectra of the time-domain signals obtained from semiconductor microcavities by using a pump-probe technique show that the intensity of the coherent longitudinal optical phonon of CuCl is enhanced by increasing that of the Rabi oscillation, which indicates that the coherent phonon is driven by the Rabi oscillation through the Fröhlich interaction. Moreover, as the Rabi oscillation frequency decreases upon crossing the phonon frequency, the spectral profile of the coherent phonon changes from a peak to a dip with an asymmetric structure. The continuous wavelet transformation reveals that these peak and dip structures originate from constructive and destructive interference between Rabi oscillations and coherent phonons, respectively. We demonstrate that the asymmetric spectral structures in relation to the frequency detuning are well reproduced by using a classical coupled oscillator model on the basis of dynamical Fano-like interference.

Biexcitons in semiconductor microcavities

DEFF Research Database (Denmark)

Borri, P.; Langbein, W.; Woggon, U.

2003-01-01

in the microcavity, even if the vacuum Rabi splitting exceeds the biexciton binding energy. However, the presence of a longitudinal built-in electric field that results in a Stark effect slightly reducing the binding energy compared to the value measured on a reference bare quantum well is experimentally pointed out...

Tunable radiation emitting semiconductor device

NARCIS (Netherlands)

2009-01-01

A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

Coherent response of a semiconductor microcavity in the strong coupling regime

Science.gov (United States)

Cassabois, G.; Triques, A. L. C.; Ferreira, R.; Delalande, C.; Roussignol, Ph; Bogani, F.

2000-05-01

We have studied the coherent dynamics of a semiconductor microcavity by means of interferometric correlation measurements with subpicosecond time resolution in a backscattering geometry. Evidence is brought of the resolution of a homogeneous polariton line in an inhomogeneously broadened exciton system. Surprisingly, photon-like polaritons exhibit an inhomogeneous dephasing. Moreover, we observe an unexpected stationary coherence up to 8 ps for the lower polariton branch close to resonance. All these experimental results are well reproduced within the framework of a linear dispersion theory assuming a coherent superposition of the reflectivity and resonant Rayleigh scattering signals with a well-defined relative phase.

Influence of multi-exciton correlations on nonlinear polariton dynamics in semiconductor microcavities

International Nuclear Information System (INIS)

Wen, P; Nelson, Keith A; Christmann, G; Baumberg, J J

2013-01-01

Using two-dimensional spectroscopy, we resolve multi-polariton coherences in quantum wells embedded inside a semiconductor microcavity and elucidate how multi-exciton correlations mediate polariton nonlinear dynamics. We find that polariton correlation strengths depend on spectral overlap with the biexciton resonance and that up to at least four polaritons can be correlated, a higher-order correlation than observed to date among excitons in bare quantum wells. The high-order correlations can be attributed to coupling through the cavity mode, although the role of high-order Coulomb correlations cannot be excluded. (paper)

Dynamics of polaritons in semiconductor microcavities near instability thresholds

International Nuclear Information System (INIS)

He, Peng-Bin

2012-01-01

A theoretical study is presented on the dynamics of polaritons in semiconductor microcavities near parametric instability thresholds. With upward or downward ramp of optical pump, different instability modes emerge in parameter space defined by damping and detuning. According to these modes, stationary short-wave, stationary periodic, oscillatory periodic, and oscillatory uniform parametric instabilities are distinguished. By multiple scale expansion, the dynamics near threshold can be described by a critical mode with a slowly varying amplitude for the last three instabilities. Furthermore, it is found that the evolutions of their amplitudes are governed by real or complex Ginzburg–Landau equations. -- Highlights: ► Phase diagrams for different instability in extended parameter space. ► Different instability modes near thresholds. ► Different envelop equations near thresholds obtained by multi-scale expansion.

Simulations of emission from microcavity tandem organic light-emitting diodes

International Nuclear Information System (INIS)

Biswas, Rana; Xu, Chun; Zhao, Weijun; Liu, Rui; Shinar, Ruth; Shinar, Joseph

2011-01-01

Microcavity tandem organic light-emitting diodes (OLEDs) are simulated and compared to experimental results. The simulations are based on two complementary techniques: rigorous finite element solutions of Maxwell's equations and Fourier space scattering matrix solutions. A narrowing and blue shift of the emission spectrum relative to the noncavity single unit OLED is obtained both theoretically and experimentally. In the simulations, a distribution of emitting sources is placed near the interface of the electron transport layer tris(8-hydroxyquinoline) Al (Alq 3 ) and the hole transport layer (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine) (α-NPB). Far-field electric field intensities are simulated. The simulated widths of the emission peaks also agree with the experimental results. The simulations of the 2-unit tandem OLEDs shifted the emission to shorter wavelength, in agreement with experimental measurements. The emission spectra's dependence on individual layer thicknesses also agreed well with measurements. Approaches to simulate and improve the light emission intensity from these OLEDs, in particular for white OLEDs, are discussed.

Weak Localization of Light in a Disordered Microcavity

Science.gov (United States)

Gurioli, M.; Bogani, F.; Cavigli, L.; Gibbs, H.; Khitrova, G.; Wiersma, D. S.

2005-05-01

We report the observation of weak localization of light in a semiconductor microcavity. The intrinsic disorder in a microcavity leads to multiple scattering and hence to static speckle. We show that averaging over realizations of the disorder reveals a coherent backscattering cone that has a coherent enhancement factor ≥2, as required by reciprocity. The coherent backscattering cone is observed along a ring-shaped pattern due to confinement by the microcavity.

Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

International Nuclear Information System (INIS)

Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

1999-01-01

Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

Biexcitons or bipolaritons in a semiconductor microcavity

DEFF Research Database (Denmark)

Borri, Paola; Langbein, Wolfgang Werner; Woggon, U

2000-01-01

A well-resolved nonlinear optical transition associated with biexcitons is observed in a high-quality microcavity with a Rabi splitting exceeding the binding energy of biexcitons in the embedded quantum well. This transition is identified as an induced absorption from the lower polariton to the b......A well-resolved nonlinear optical transition associated with biexcitons is observed in a high-quality microcavity with a Rabi splitting exceeding the binding energy of biexcitons in the embedded quantum well. This transition is identified as an induced absorption from the lower polariton...

Optical properties of semiconductors quantum microcavity structures

International Nuclear Information System (INIS)

Afshar, A.M.

1996-12-01

The principal phenomenon investigated in this thesis is vacuum Rabi coupling in semiconductor microcavity structures. In these structures quantum well excitons are embedded in a Fabry - Perot like cavity, defined by two semiconductor dielectric mirrors. In such a system the coupled exciton and cavity photon mode form a mixed - mode polariton, where on - resonance there are two branches, each having 50% exciton and 50% photon character. The separation between the upper and lower branches is a measure of the coupling strength where the strength is dependent on the exciton oscillator strength. This interaction is known as vacuum Rabi coupling, and clear anticrossing is seen when the exciton is tuned through the cavity. In our reflectivity experiments we demonstrate control of the coupling between the cavity mode and the exciton by varying temperature, applied electric or magnetic field. Modelling of the reflectivity spectra and the tuning was done using a Transfer Matrix Reflectivity (TMR) model or a linear dispersion model, where in both cases the excitons are treated as Lorentz oscillators. Temperature tuning is achieved because exciton energy decreases with temperature at a much faster rate than the cavity mode. We have demonstrated vacuum Rabi coupling of the cavity mode with both the heavy - hole and light - hole excitons. Electric field tuning is achieved via the quantum confined Stark effect which decreases the exciton energy with increasing field, whilst at the same time the cavity mode energy remains constant. A study of how the electric field reduction of exciton oscillator strength reduces the vacuum Rabi coupling strength is performed. We report the first observation in a semiconductor structure of motional narrowing, seen in both electric field and in temperature tuning experiments at high magnetic field. In magnetic field studies we show how magnetic field induced increase in exciton oscillator strength affects the vacuum Rabi coupling. We also show by

Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation

Energy Technology Data Exchange (ETDEWEB)

Goto, Kaname [Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan); Yamashita, Kenichi, E-mail: yamasita@kit.ac.jp [Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan); Yanagi, Hisao [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan); Yamao, Takeshi; Hotta, Shu [Faculty of Materials Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan)

2016-08-08

Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ∼100 meV even in the “half-vertical cavity surface emitting lasing” microcavity structure.

Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation

Science.gov (United States)

Goto, Kaname; Yamashita, Kenichi; Yanagi, Hisao; Yamao, Takeshi; Hotta, Shu

2016-08-01

Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ˜100 meV even in the "half-vertical cavity surface emitting lasing" microcavity structure.

Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation

International Nuclear Information System (INIS)

Goto, Kaname; Yamashita, Kenichi; Yanagi, Hisao; Yamao, Takeshi; Hotta, Shu

2016-01-01

Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ∼100 meV even in the “half-vertical cavity surface emitting lasing” microcavity structure.

Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d' Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

2014-06-09

The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

Microcavity-Free Broadband Light Outcoupling Enhancement in Flexible Organic Light-Emitting Diodes with Nanostructured Transparent Metal-Dielectric Composite Electrodes.

Science.gov (United States)

Xu, Lu-Hai; Ou, Qing-Dong; Li, Yan-Qing; Zhang, Yi-Bo; Zhao, Xin-Dong; Xiang, Heng-Yang; Chen, Jing-De; Zhou, Lei; Lee, Shuit-Tong; Tang, Jian-Xin

2016-01-26

Flexible organic light-emitting diodes (OLEDs) hold great promise for future bendable display and curved lighting applications. One key challenge of high-performance flexible OLEDs is to develop new flexible transparent conductive electrodes with superior mechanical, electrical, and optical properties. Herein, an effective nanostructured metal/dielectric composite electrode on a plastic substrate is reported by combining a quasi-random outcoupling structure for broadband and angle-independent light outcoupling of white emission with an ultrathin metal alloy film for optimum optical transparency, electrical conduction, and mechanical flexibility. The microcavity effect and surface plasmonic loss can be remarkably reduced in white flexible OLEDs, resulting in a substantial increase in the external quantum efficiency and power efficiency to 47.2% and 112.4 lm W(-1).

Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

DEFF Research Database (Denmark)

Xiao, Sanshui; Qiu, M.

2007-01-01

Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor is gr...... is gradually enhanced and the resonant frequency converges to that of the corresponding surface mode in the photonic crystals. These structures have potential applications such as sensing.......Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor...

Anisotropic exchange interaction induced by a single photon in semiconductor microcavities

Science.gov (United States)

Chiappe, G.; Fernández-Rossier, J.; Louis, E.; Anda, E. V.

2005-12-01

We investigate coupling of localized spins in a semiconductor quantum dot embedded in a microcavity. The lowest cavity mode and the quantum dot exciton are coupled and close in energy, forming a polariton. The fermions forming the exciton interact with localized spins via exchange. Exact diagonalization of a Hamiltonian in which photons, spins, and excitons are treated quantum mechanically shows that a single polariton induces a sizable indirect anisotropic exchange interaction between spins. At sufficiently low temperatures strong ferromagnetic correlations show up without an appreciable increase in exciton population. In the case of a (Cd,Mn)Te quantum dot, Mn-Mn ferromagnetic coupling is still significant at 1 K : spin-spin correlation around 3 for exciton occupation smaller than 0.3. We find that the interaction mediated by photon-polaritons is 10 times stronger than the one induced by a classical field for equal Rabi splitting.

White emission from nano-structured top-emitting organic light-emitting diodes based on a blue emitting layer

International Nuclear Information System (INIS)

Hyun, Woo Jin; Park, Jung Jin; Park, O Ok; Im, Sang Hyuk; Chin, Byung Doo

2013-01-01

We demonstrated that white emission can be obtained from nano-structured top-emitting organic light-emitting diodes (TEOLEDs) based on a blue emitting layer (EML). The nano-structured TEOLEDs were fabricated on nano-patterned substrates, in which both optical micro-cavity and scattering effects occur simultaneously. Due to the combination of these two effects, the electroluminescence spectra of the nano-structured device with a blue EML exhibited not only blue but also yellow colours, which corresponded to the intrinsic emission of the EML and the resonant emission of the micro-cavity effect. Consequently, it was possible to produce white emission from nano-structured TEOLEDs without employing a multimode micro-cavity. The intrinsic emission wavelength can be varied by altering the dopant used for the EML. Furthermore, the emissive characteristics turned out to be strongly dependent on the nano-pattern sizes of the nano-structured devices. (paper)

Modal analysis of spontaneous emission in a planar microcavity

International Nuclear Information System (INIS)

Rigneault, H.; Monneret, S.

1996-01-01

A complete set of cavity modes in planar dielectric microcavities is presented which naturally includes guided modes. We show that most of these orthonormal fields can be derived from a coherent superposition of plane waves incoming on the stack from the air and from the substrate. Spontaneous emission of a dipole located inside the microcavity is analyzed, in terms of cavity modes. Derivation of the radiation pattern in the air and in the substrate is presented. The power emitted into the guided modes is also determined. Finally, a numerical analysis of the radiative properties of an erbium atom located in a Fabry-Pacute erot multilayer dielectric microcavity is investigated. We show that a large amount of light is emitted into the guided modes of the structure, in spite of the Fabry-Pacute erot resonance, which increases the spontaneous emission rate in a normal direction. copyright 1996 The American Physical Society

Directional Secondary Emission of a Semiconductor Microcavity

DEFF Research Database (Denmark)

Langbein, Wolfgang; Jensen, Jacob Riis; Hvam, Jørn Märcher

2000-01-01

We investigate the time-resolved secondary emission of a homogeneously broadened microcavity after resonant excitation. The sample consists of a 25nm GaAs single quantum well (QW) in the center of a wedged ¥ë cavity with AlAs/AlGaAs Bragg reflectors, grown by molecular beam epitaxy. At zero detun...

Spin-controlled ultrafast vertical-cavity surface-emitting lasers

Science.gov (United States)

Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

2014-05-01

Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

Top-emitting organic light-emitting diodes.

Science.gov (United States)

Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

2011-11-07

We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

Microcavity Plasma Devices and Arrays Fabricated in Semiconductor, Ceramic, or Metal/polymer Structures: A New Realm of Plasma Physics and Photonics Applications

International Nuclear Information System (INIS)

Eden, J. G.

2005-01-01

Micro discharge, or microcavity plasma, is the broad term that has come to be associated with an emerging class of glow discharge devices in which the characteristic spatial dimension of the plasma is nominally ) dia. Si wafers and operated in the rare gases and Ar/N2 gas mixtures. Also, photodetection in the ultraviolet, visible and near-infrared with microplasma devices has been observed by interfacing a low temperature plasma with a semiconductor. Carbon nanotubes grown directly within the microcavity of microplasma devices improve all key performance parameters of the device, and nanoporous Al2O3 grown onto Al by wet chemical processing yields microplasma devices of exceptional stability and lifetime. The opportunities such structures offer for accessing new avenues in plasma physics and photonics will be discussed. (Author)

Rayleigh scattering in coupled microcavities: theory.

Science.gov (United States)

Vörös, Zoltán; Weihs, Gregor

2014-12-03

In this paper we theoretically study how structural disorder in coupled semiconductor heterostructures influences single-particle scattering events that would otherwise be forbidden by symmetry. We extend the model of Savona (2007 J. Phys.: Condens. Matter 19 295208) to describe Rayleigh scattering in coupled planar microcavity structures, and find that effective filter theories can be ruled out.

Blue emitting organic semiconductors under high pressure

DEFF Research Database (Denmark)

Knaapila, Matti; Guha, Suchismita

2016-01-01

This review describes essential optical and emerging structural experiments that use high GPa range hydrostatic pressure to probe physical phenomena in blue-emitting organic semiconductors including π-conjugated polyfluorene and related compounds. The work emphasizes molecular structure and inter......This review describes essential optical and emerging structural experiments that use high GPa range hydrostatic pressure to probe physical phenomena in blue-emitting organic semiconductors including π-conjugated polyfluorene and related compounds. The work emphasizes molecular structure...... and intermolecular self-organization that typically determine transport and optical emission in π-conjugated oligomers and polymers. In this context, hydrostatic pressure through diamond anvil cells has proven to be an elegant tool to control structure and interactions without chemical intervention. This has been...... and intermolecular interactions on optical excitations, electron–phonon interaction, and changes in backbone conformations. This picture is connected to the optical high pressure studies of other π-conjugated systems and emerging x-ray scattering experiments from polyfluorenes which provides a structure-property map...

Highly efficient phosphor-converted white organic light-emitting diodes with moderate microcavity and light-recycling filters.

Science.gov (United States)

Cho, Sang-Hwan; Oh, Jeong Rok; Park, Hoo Keun; Kim, Hyoung Kun; Lee, Yong-Hee; Lee, Jae-Gab; Do, Young Rag

2010-01-18

We demonstrate the combined effects of a microcavity structure and light-recycling filters (LRFs) on the forward electrical efficiency of phosphor-converted white organic light-emitting diodes (pc-WOLEDs). The introduction of a single pair of low- and high-index layers (SiO(2)/TiO(2)) improves the blue emission from blue OLED and the insertion of blue-passing and yellow-reflecting LRFs enhances the forward yellow emission from the YAG:Ce(3+) phosphors layers. The enhancement of the luminous efficacy of the forward white emission is 1.92 times that of a conventional pc-WOLED with color coordinates of (0.34, 0.34) and a correlated color temperature of about 4800 K.

Ultrafast dynamics and laser action of organic semiconductors

CERN Document Server

Vardeny, Zeev Valy

2009-01-01

Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

International Nuclear Information System (INIS)

Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

1993-01-01

Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

Study on the GaAs(110) surface using emitted atom spectrometry

International Nuclear Information System (INIS)

Gayone, J.E.; Sanchez, E.A.; Grizzi, O.; Universidad Nacional de Cuyo, Mendoza

1998-01-01

The facilities implemented at Bariloche for the ion scattering spectrometry is described, and recent examples of the technique application to determine the atomic structure and the composition of metallic and semiconductor surfaces, pure and with different adsorbates. The surface analysis technique using emitted atom spectrometry is discussed. The sensitivity to the GaAs(110) surface atomic relaxation is presented, and the kinetic of hydrogen adsorption by the mentioned surface is studied

Lambertian white top-emitting organic light emitting device with carbon nanotube cathode

Science.gov (United States)

Freitag, P.; Zakhidov, Al. A.; Luessem, B.; Zakhidov, A. A.; Leo, K.

2012-12-01

We demonstrate that white organic light emitting devices (OLEDs) with top carbon nanotube (CNT) electrodes show almost no microcavity effect and exhibit essentially Lambertian emission. CNT top electrodes were applied by direct lamination of multiwall CNT sheets onto white small molecule OLED stack. The devices show an external quantum efficiency of 1.5% and high color rendering index of 70. Due to elimination of the cavity effect, the devices show good color stability for different viewing angles. Thus, CNT electrodes are a viable alternative to thin semitransparent metallic films, where the strong cavity effect causes spectral shift and non-Lambertian angular dependence. Our method of the device fabrication is simple yet effective and compatible with virtually any small molecule organic semiconductor stack. It is also compatible with flexible substrates and roll-to-roll fabrication.

Emerging applications for vertical cavity surface emitting lasers

International Nuclear Information System (INIS)

Harris, J S; O'sullivan, T; Sarmiento, T; Lee, M M; Vo, S

2011-01-01

Vertical cavity surface emitting lasers (VCSELs) emitting at 850 nm have experienced explosive growth in the past decade because of their many attractive optical features and incredibly low-cost manufacturability. This review reviews the foundations for GaAs-based VCSEL technology as well as the materials and device challenges to extend the operating wavelength to both shorter and longer wavelengths. We discuss some of the applications that are enabled by the integration of VCSELs with both active and passive semiconductor elements for telecommunications, both in vivo and in vitro biosensing, high-density optical storage and imaging at wavelengths much less than the diffraction limit of light

Surface planarization effect of siloxane derivatives in organic semiconductor layers

Energy Technology Data Exchange (ETDEWEB)

Sakanoue, Kei [Center for Organic Photonics and Electronics Research, Kyushu University, Nishi-ku, Fukuoka 819-0395 (Japan); Harada, Hironobu; Ando, Kento [Department of Chemical Engineering, Graduate School of Engineering, Kyushu University, Nishi-ku, Fukuoka 819-0395 (Japan); Yahiro, Masayuki [Institute of Systems, Information Technologies and Nanotechnologies, 2-1-22, Sawara-ku, Fukuoka 814-0001 (Japan); Fukai, Jun, E-mail: jfukai@chem-eng.kyushu-u.ac.jp [Department of Chemical Engineering, Graduate School of Engineering, Kyushu University, Nishi-ku, Fukuoka 819-0395 (Japan)

2015-12-31

The ability of siloxane surface control additives (SCAs) to planarize organic semiconductor films with a thickness of tens of nanometers printed on indium tin oxide (ITO) surfaces with stripe-patterned bank structures using a liquid-phase method is demonstrated. Three types of SCAs with different molecular structures are examined in organic solutions of toluene, anisole and tetralin containing N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)-benzidine as a solute and typical organic semiconductor. While there is an optimum SCA and concentration for each solution, one type of SCA is comprehensively effective for all solutions. This SCA increased contact angle, which is contrary to the typical behavior of SCAs. Scanning electron microscope images of the thin films near the banks reveal that this SCA did not change the contact area between the film and substrate surface, which is related to the effectiveness of the SCA. SCAs did not affect the current–voltage characteristics of green organic light-emitting diodes, but did increase external quantum efficiencies, suggesting that SCAs can be used to improve the quality of solution-deposited films for use in optical devices. - Highlights: • Surface control additives planarize organic semiconductor films coated on surfaces. • The most effective additive increases the contact angle of solutions during drying. • The effect of additives is deduced from solutal Marangoni forces. • Additives have little effect on organic light-emitting diode performance.

Surface planarization effect of siloxane derivatives in organic semiconductor layers

International Nuclear Information System (INIS)

Sakanoue, Kei; Harada, Hironobu; Ando, Kento; Yahiro, Masayuki; Fukai, Jun

2015-01-01

The ability of siloxane surface control additives (SCAs) to planarize organic semiconductor films with a thickness of tens of nanometers printed on indium tin oxide (ITO) surfaces with stripe-patterned bank structures using a liquid-phase method is demonstrated. Three types of SCAs with different molecular structures are examined in organic solutions of toluene, anisole and tetralin containing N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)-benzidine as a solute and typical organic semiconductor. While there is an optimum SCA and concentration for each solution, one type of SCA is comprehensively effective for all solutions. This SCA increased contact angle, which is contrary to the typical behavior of SCAs. Scanning electron microscope images of the thin films near the banks reveal that this SCA did not change the contact area between the film and substrate surface, which is related to the effectiveness of the SCA. SCAs did not affect the current–voltage characteristics of green organic light-emitting diodes, but did increase external quantum efficiencies, suggesting that SCAs can be used to improve the quality of solution-deposited films for use in optical devices. - Highlights: • Surface control additives planarize organic semiconductor films coated on surfaces. • The most effective additive increases the contact angle of solutions during drying. • The effect of additives is deduced from solutal Marangoni forces. • Additives have little effect on organic light-emitting diode performance.

2 W high efficiency PbS mid-infrared surface emitting laser

Science.gov (United States)

Ishida, A.; Sugiyama, Y.; Isaji, Y.; Kodama, K.; Takano, Y.; Sakata, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Zogg, H.

2011-09-01

High efficiency laser operation with output power exceeding 2 W was obtained for vertical external-cavity PbS based IV-VI compound surface emitting quantum-well structures. The laser showed external quantum efficiency as high as 16%. Generally, mid-infrared III-V or II-VI semiconductor laser operation utilizing interband electron transitions are restricted by Auger recombination and free carrier absorption. Auger recombination is much lower in the IV-VI semiconductors, and the free-carrier absorption is significantly reduced by an optically pumped laser structure including multi-step optical excitation layers.

MBE-grown semiconductor nanostructures with electronic and photonic confinement

DEFF Research Database (Denmark)

Jensen, Jacob Riis

In this thesis the realization of semiconductor nanostructures in the InAlGaAs material system with molecular beam epitaxy (MBE) is described, as well as the characterization of their optical properties. First, the growth conditions used for different materials and surfaces are given, and the gen...... a microcavity is measured and analysed, where a good qualitative agreement with theories for Rayleigh scattering is found, ant he so-called polariton bottleneck is observed....... well is also taken into account, which is demonstrated in a microcavity with a reduced light-matter interaction. For the polariton with the lowest eigenenergy, it is shown that the probability for scattering on lattice vibrations or free carriers is reduced. Finally, the secondary emission from...

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Multi-Valued Spin Switch in a Semiconductor Microcavity

Science.gov (United States)

Paraïso, T. K.; Wouters, M.; Léger, Y.; Morier-Genoud, F.; Deveaudhyphen; Plédran, B.

2011-12-01

In this work, we report on the first realization of multi-valued spin switching in the solid-state. We investigate the physics of spinor bistability with microcavity polaritons in a trap. Spinor interactions lead to special bistability regimes with decoupled thresholds for spin-up and spin-down polaritons. This allows us to establish state-of-the-art spin switching operations. We evidence polarization hysteresis and determine appropriate conditions to achieve spin multistability. For a given excitation condition, three stable spin states coexist for the system. These results open new pathways for the development of innovative spin-based logic gates and memory devices.

POWER, METALLURGICAL AND CHEMICAL MECHANICAL ENGINEERING THERMOELECTRIC EVENTS IN LIGHT-EMITTING BIPOLAR SEMICONDUCTOR STRUCTURES

Directory of Open Access Journals (Sweden)

P. A. Magomedova

2017-01-01

Full Text Available Objective. The development of light-emitting bipolar semiconductor structures having a low level of parasitic heat release.Methods. A method for converting thermoelectric heat in bipolar semiconductor structures into optical radiation to divert the excess energy into the environment was developed. At the same time, the cooling effect on thermoelectric junctions remains. Instead of an inertial process of conductive or convective heat transfer, practically instantaneous heat removal from electronic components to the environment takes place.Results. As a result, light-emitting bipolar semiconductor structures will allow more powerful devices with greater speed and degree of integration to be created. It is possible to produce transparent LED matrices with a two-way arrangement of transparent solar cells and mirror metal electrodes along the perimeter. When current is applied, the LED matrix on one of the transitions will absorb thermal energy; on other electrodes, it will emit radiation that is completely recovered into electricity by means of transparent solar cells following repeated reflection between the mirror electrodes. The low efficiency of solar cells will be completely compensated for with the multiple passages of photons through these batteries.Conclusion. Light-emitting bipolar semiconductor structures will not only improve the reliability of electronic components in a wide range of performance characteristics, but also improve energy efficiency through the use of optical radiation recovery. Semiconductor thermoelectric devices using optical phenomena in conjunction with the Peltier effect allow a wide range of energy-efficient components of radio electronic equipment to be realised, both for discrete electronics and for microsystem techniques. Systems for obtaining ultra-low temperatures in order to achieve superconductivity are of particular value. 

Organic semiconductor heterojunctions and its application in organic light-emitting diodes

CERN Document Server

Ma, Dongge

2017-01-01

This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

Rabi-like splitting from large area plasmonic microcavity

Directory of Open Access Journals (Sweden)

Fatemeh Hosseini Alast

2017-08-01

Full Text Available Rabi-like splitting was observed from a hybrid plasmonic microcavity. The splitting comes from the coupling of cavity mode with the surface plasmon polariton mode; anti-crossing was observed alongside the modal conversional channel on the reflection light measurement. The hybrid device consists of a 10x10 mm2 ruled metal grating integrated onto the Fabry-Perot microcavity. The 10x10 mm2 ruled metal grating fabricated from laser interference and the area is sufficiently large to be used in the practical optical device. The larger area hybrid plasmonic microcavity can be employed in polariton lasers and biosensors.

Voltage-controlled colour-tunable microcavity OLEDs with enhanced colour purity

International Nuclear Information System (INIS)

Choy, Wallace C H; Niu, J H; Li, W L; Chui, P C

2008-01-01

The emission spectrum of single-unit voltage-controlled colour-tunable organic light emitting devices (OLEDs) has been theoretically and experimentally studied. Our results show that by introducing the microcavity structure, the colour purity of not only the destination colour but also the colour-tunable route can be enhanced, while colour purity is still an issue in typical single-unit voltage-controlled colour-tunable OLEDs. With the consideration of the periodical cycling of resonant wavelength and absorption loss of the metal electrodes, the appropriate change in the thickness of the microcavity structure has been utilized to achieve voltage-controlled red-to-green and red-to-blue colour-tunable OLEDs without adding dyes or other organic materials to the OLEDs

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn; Liu, Bin; Wang, Lianhui [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Shi, Hongying [Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China); Huang, Wei, E-mail: iamdirector@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

2015-02-28

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

Optical Microcavity: Sensing down to Single Molecules and Atoms

Directory of Open Access Journals (Sweden)

Shu-Yu Su

2011-02-01

Full Text Available This review article discusses fundamentals of dielectric, low-loss, optical micro-resonator sensing, including figures of merit and a variety of microcavity designs, and future perspectives in microcavity-based optical sensing. Resonance frequency and quality (Q factor are altered as a means of detecting a small system perturbation, resulting in realization of optical sensing of a small amount of sample materials, down to even single molecules. Sensitivity, Q factor, minimum detectable index change, noises (in sensor system components and microcavity system including environments, microcavity size, and mode volume are essential parameters to be considered for optical sensing applications. Whispering gallery mode, photonic crystal, and slot-type microcavities typically provide compact, high-quality optical resonance modes for optical sensing applications. Surface Bloch modes induced on photonic crystals are shown to be a promising candidate thanks to large field overlap with a sample and ultra-high-Q resonances. Quantum optics effects based on microcavity quantum electrodynamics (QED would provide novel single-photo-level detection of even single atoms and molecules via detection of doublet vacuum Rabi splitting peaks in strong coupling.

Novel emission phenomena in organic microcavities (Conference Presentation)

Science.gov (United States)

Leo, Karl

2016-09-01

Organic light emitting diodes (OLED) are today a mature techology and have reached high efficiency both in monochrome and white devices. One of the main research areas for further improvement is still the optical design which enables many new approaches to enhance efficiency and realize special emission properties. In this talk, I will review our recent work on OLED outcoupling, in particular for devices encapsulated in microcavities and patterned structures.

Effect of interface disorder on quantum well excitons and microcavity polaritons

International Nuclear Information System (INIS)

Savona, Vincenzo

2007-01-01

The theory of the linear optical response of excitons in quantum wells and polaritons in planar semiconductor microcavities is reviewed, in the light of the existing experiments. For quantum well excitons, it is shown that disorder mainly affects the exciton centre-of-mass motion and is modelled by an effective Schroedinger equation in two dimensions. For polaritons, a unified model accounting for quantum well roughness and fluctuations of the microcavity thickness is developed. Numerical results confirm that polaritons are mostly affected by disorder acting on the photon component, thus confirming existing studies on the influence of exciton disorder. The polariton localization length is estimated to be in the few-micrometres range, depending on the amplitude of disorder, in agreement with recent experimental findings

Transition between bulk and surface refractive index sensitivity of micro-cavity in-line Mach-Zehnder interferometer induced by thin film deposition.

Science.gov (United States)

Śmietana, Mateusz; Janik, Monika; Koba, Marcin; Bock, Wojtek J

2017-10-16

In this work we discuss the refractive index (RI) sensitivity of a micro-cavity in-line Mach-Zehnder interferometer in the form of a cylindrical hole (40-50 μm in diameter) fabricated in a standard single-mode optical fiber using a femtosecond laser. The surface of the micro-cavity was coated with up to 400 nm aluminum oxide thin film using the atomic layer deposition method. Next, the film was progressively chemically etched and the influence on changes in the RI of liquid in the micro-cavity was determined at different stages of the experiment, i.e., at different thicknesses of the film. An effect of transition between sensitivity to the film thickness (surface) and the RI of liquid in the cavity (bulk) is demonstrated for the first time. We have found that depending on the interferometer working conditions determined by thin film properties, the device can be used for investigation of phenomena taking place at the surface, such as in case of specific label-free biosensing applications, or for small-volume RI analysis as required in analytical chemistry.

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

Science.gov (United States)

McInerney, John G.

2016-03-01

Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

Finite-momentum condensation in a pumped microcavity

International Nuclear Information System (INIS)

Brierley, R. T.; Eastham, P. R.

2010-01-01

We calculate the absorption spectra of a semiconductor microcavity into which a nonequilibrium exciton population has been pumped. We predict strong peaks in the spectrum corresponding to collective modes analogous to the Cooper modes in superconductors and fermionic atomic gases. These modes can become unstable, leading to the formation of off-equilibrium quantum condensates. We calculate a phase diagram for condensation and show that the dominant instabilities can be at a finite momentum. Thus we predict the formation of inhomogeneous condensates, similar to Fulde-Ferrel-Larkin-Ovchinnikov states.

Ultra-fast polariton dynamics in an organic microcavity

Directory of Open Access Journals (Sweden)

Polli D.

2013-03-01

Full Text Available We study an organic semiconductor microcavity operating in the strong-coupling regime using femtosecond pump-probe spectroscopy. By probing the photo-induced absorption bands, we characterize the time-dependent population densities of states in the two polariton branches. We found evidence of a scattering process from the upper-branch cavity polaritons to the exciton reservoir having a rate of (150 fs-1. A slower process similarly populates lower-branch polaritons with a rate of around (3ps-1

Quantum condensation from a tailored exciton population in a microcavity

International Nuclear Information System (INIS)

Eastham, P. R.; Phillips, R. T.

2009-01-01

An experiment is proposed on the coherent quantum dynamics of a semiconductor microcavity containing quantum dots. Modeling the experiment using a generalized Dicke model, we show that a tailored excitation pulse can create an energy-dependent population of excitons, which subsequently evolves to a quantum condensate of excitons and photons. The population is created by a generalization of adiabatic rapid passage and then condenses due to a dynamical analog of the BCS instability.

Photoluminescence eigenmodes in the ZnO semiconductor microcavity on the Ag/Si substrate

Czech Academy of Sciences Publication Activity Database

Luo, X.; Wang, J.; Mao, H.; Remeš, Zdeněk; Král, Karel

2013-01-01

Roč. 112, č. 4 (2013), s. 821-825 ISSN 0947-8396 R&D Projects: GA MŠk LH12186 Institutional support: RVO:68378271 Keywords : ZnO * photoluminescence * microcavity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.694, year: 2013

III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

International Nuclear Information System (INIS)

Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

1984-01-01

Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

White organic light-emitting devices incorporating nanoparticles of II-VI semiconductors

International Nuclear Information System (INIS)

Ahn, Jin H; Bertoni, Cristina; Dunn, Steve; Wang, Changsheng; Talapin, Dmitri V; Gaponik, Nikolai; Eychmueller, Alexander; Hua Yulin; Bryce, Martin R; Petty, Michael C

2007-01-01

A blue-green fluorescent organic dye and red-emitting nanoparticles, based on II-VI semiconductors, have been used together in the fabrication of white organic light-emitting devices. In this work, the materials were combined in two different ways: in the form of a blend, and as separate layers deposited on the opposite sides of the substrate. The blended-layer structure provided purer white emission. However, this device also exhibited a number of disadvantages, namely a high drive voltage, a low efficiency and some colour instability. These problems could be avoided by using a device structure that was fabricated using separate dye and nanoparticle layers

Photoluminescence from a Tb-doped photonic crystal microcavity for white light generation

International Nuclear Information System (INIS)

Li Yigang; Almeida, Rui M

2010-01-01

Terbium-doped one-dimensional triple microcavities have been prepared by sol-gel processing. The photoluminescence (PL) of Tb 3+ ions outside a microcavity structure, when excited by blue laser light at 488 nm, consisted of three distinct peaks at 542, 587 and 619 nm. When embedded in the microcavities, the three Tb 3+ PL peaks were enhanced, balanced and broadened by the photonic crystal structure and combined into a continuous broad band. An analysis in the CIE colour space showed that white light can be obtained by mixing the modified Tb 3+ PL with the blue exciting light, while this is impossible with the original PL profile. This novel technique may improve white light generation by enhancing and modifying the spontaneous emission of current phosphors. It may also lead to the development of new rare-earth phosphor materials based on 4f-4f transitions, able to generate white light more efficiently, via simpler and cheaper alternatives to the current phosphor compositions. A novel configuration to combine this kind of structure with a white light-emitting-diode (LED) is also proposed.

Raman scattering enhancement in photon-plasmon resonance mediated metal-dielectric microcavity

International Nuclear Information System (INIS)

Guddala, Sriram; Narayana Rao, D.; Dwivedi, Vindesh K.; Vijaya Prakash, G.

2013-01-01

Here, we report the photon-plasmon interaction scheme and enhanced field strengths resulted into the amplification of phonon in a novel microcavity. A metal-dielectric microcavity, with unified cavity photonic mode and localized surface plasmon resonances, is visualized by impregnating the gold nanoparticles into the deep see-through nano-sized pores of porous silicon microcavity. The intense optical field strengths resulting from the photon-plasmon interactions are probed by both resonant and non-resonant Raman scattering experiments. Due to photon-plasmon-phonon interaction mechanism, several orders of enhancement in the intensity of scattered Raman Stokes photon (at 500 cm −1 ) are observed. Our metal nanoparticle-microcavity hybrid system shows the potential to improve the sensing figure of merit as well as the applications of plasmonics for optoelectronics, photovoltaics, and related technologies

Ultraviolet lasing behavior in ZnO optical microcavities

Directory of Open Access Journals (Sweden)

Hongxing Dong

2017-12-01

Full Text Available Zinc oxide (ZnO optical microcavity modulated UV lasers have been attracting a wide range of research interests. As one of the most important materials in developing high quality microcavity and efficient UV–visible optoelectronic devices due to its wide band gap (3.37 eV and large exciton binding energy (∼60 meV. In this review, we summarized the latest development of ZnO optical cavity based microlasers, mainly including Fabry-Perot mode lasers and whispering gallery mode lasers. The synthesis and optical studies of ZnO optical microcavities with different morphologies were discussed in detail. Finally, we also consider that the research focus in the near future would include new nanotechnology and physical effects, such as nano/micro fabrication, surface plasmon enhancement, and quantum dot coupling, which may result in new and interesting physical phenomena.

Solid state microcavity dye lasers fabricated by nanoimprint lithography

DEFF Research Database (Denmark)

Nilsson, Daniel; Nielsen, Theodor; Kristensen, Anders

2004-01-01

propagating TE–TM modes. The laser cavity has the lateral shape of a trapezoid, supporting lasing modes by reflection on the vertical cavity walls. The solid polymer dye lasers emit laterally through one of the vertical cavity walls, when pumped optically through the top surface by means of a frequency...... doubled, pulsed Nd:YAG laser. Lasing in the wavelength region from 560 to 570 nm is observed from a laser with a side-length of 50 µm. In this proof of concept, the lasers are multimode with a mode wavelength separation of approximately 1.6 nm, as determined by the waveguide propagation constant......We present a solid state polymer microcavity dye laser, fabricated by thermal nanoimprint lithography (NIL) in a dye-doped thermoplast. The thermoplast poly-methylmethacrylate (PMMA) is used due to its high transparency in the visible range and its robustness to laser radiation. The laser dye...

Multiwall carbon nanotube microcavity arrays

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Rajib; Butt, Haider, E-mail: h.butt@bham.ac.uk [Nanotechnology Laboratory, School of Mechanical Engineering, University of Birmingham, Birmingham B15 2TT (United Kingdom); Rifat, Ahmmed A. [Integrated Lightwave Research Group, Department of Electrical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603 (Malaysia); Yetisen, Ali K.; Yun, Seok Hyun [Harvard Medical School and Wellman Center for Photomedicine, Massachusetts General Hospital, 65 Landsdowne Street, Cambridge, Massachusetts 02139 (United States); Harvard-MIT Division of Health Sciences and Technology, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Dai, Qing [National Center for Nanoscience and Technology, Beijing 100190 (China)

2016-03-21

Periodic highly dense multi-wall carbon nanotube (MWCNT) arrays can act as photonic materials exhibiting band gaps in the visible regime and beyond terahertz range. MWCNT arrays in square arrangement for nanoscale lattice constants can be configured as a microcavity with predictable resonance frequencies. Here, computational analyses of compact square microcavities (≈0.8 × 0.8 μm{sup 2}) in MWCNT arrays were demonstrated to obtain enhanced quality factors (≈170–180) and narrow-band resonance peaks. Cavity resonances were rationally designed and optimized (nanotube geometry and cavity size) with finite element method. Series (1 × 2 and 1 × 3) and parallel (2 × 1 and 3 × 1) combinations of microcavities were modeled and resonance modes were analyzed. Higher order MWCNT microcavities showed enhanced resonance modes, which were red shifted with increasing Q-factors. Parallel microcavity geometries were also optimized to obtain narrow-band tunable filtering in low-loss communication windows (810, 1336, and 1558 nm). Compact series and parallel MWCNT microcavity arrays may have applications in optical filters and miniaturized optical communication devices.

Development of L-lactate dehydrogenase biosensor based on porous silicon resonant microcavities as fluorescence enhancers.

Science.gov (United States)

Jenie, S N Aisyiyah; Prieto-Simon, Beatriz; Voelcker, Nicolas H

2015-12-15

The up-regulation of L-lactate dehydrogenase (LDH), an intracellular enzyme present in most of all body tissues, is indicative of several pathological conditions and cellular death. Herein, we demonstrate LDH detection using porous silicon (pSi) microcavities as a luminescence-enhancing optical biosensing platform. Non-fluorescent resazurin was covalently attached onto the pSi surface via thermal hydrocarbonisation, thermal hydrosylilation and acylation. Each surface modification step was confirmed by means of FTIR and the optical shifts of the resonance wavelength of the microcavity. Thermal hydrocarbonisation also afforded excellent surface stability, ensuring that the resazurin was not reduced on the pSi surface. Using a pSi microcavity biosensor, the fluorescence signal upon detection of LDH was amplified by 10 and 5-fold compared to that of a single layer and a detuned microcavity, respectively, giving a limit of detection of 0.08 U/ml. The biosensor showed a linear response between 0.16 and 6.5 U/ml, covering the concentration range of LDH in normal as well as damaged tissues. The biosensor was selective for LDH and did not produce a signal upon incubation with another NAD-dependant enzyme L-glutamic dehydrogenase. The use of the pSi microcavity as a sensing platform reduced reagent usage by 30% and analysis time threefold compared to the standard LDH assay in solution. Copyright © 2015 Elsevier B.V. All rights reserved.

Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity

Directory of Open Access Journals (Sweden)

Tomohiro Inaba

2016-04-01

Full Text Available We investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a 21-fold increase at room temperature. We systematically investigate the origin of this enhancement, and we conclude that it is due to the combination of several effects including, the lifetime shortening of the Eu emission, the strain-induced piezoelectric effect, and the increased extraction and excitation field efficiencies. This study paves the way for an alternative method to enhance the photoluminescence intensity in rare-earth doped semiconductor structures.

Operation of a novel hot-electron vertical-cavity surface-emitting laser

Science.gov (United States)

Balkan, Naci; O'Brien-Davies, Angela; Thoms, A. B.; Potter, Richard J.; Poolton, Nigel; Adams, Michael J.; Masum, J.; Bek, Alpan; Serpenguzel, Ali; Aydinli, Atilla; Roberts, John S.

1998-07-01

The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors

OpenAIRE

Linnik, M.; Christou, A.

2001-01-01

The design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 µm is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been ...

Modulation of photonic structures by surface acoustic waves

International Nuclear Information System (INIS)

Mauricio M de Lima Jr; Santos, Paulo V

2005-01-01

This paper reviews the interaction between coherently stimulated acoustic phonons in the form of surface acoustic waves with light beams in semiconductor based photonic structures. We address the generation of surface acoustic wave modes in these structures as well as the technological aspects related to control of the propagation and spatial distribution of the acoustic fields. The microscopic mechanisms responsible for the interaction between light and surface acoustic modes in different structures are then reviewed. Particular emphasis is given to the acousto-optical interaction in semiconductor microcavities and its application in photon control. These structures exhibit high optical modulation levels under acoustic excitation and are compatible with integrated light sources and detectors

All silicon waveguide spherical microcavity coupler device.

Science.gov (United States)

Xifré-Pérez, E; Domenech, J D; Fenollosa, R; Muñoz, P; Capmany, J; Meseguer, F

2011-02-14

A coupler based on silicon spherical microcavities coupled to silicon waveguides for telecom wavelengths is presented. The light scattered by the microcavity is detected and analyzed as a function of the wavelength. The transmittance signal through the waveguide is strongly attenuated (up to 25 dB) at wavelengths corresponding to the Mie resonances of the microcavity. The coupling between the microcavity and the waveguide is experimentally demonstrated and theoretically modeled with the help of FDTD calculations.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Science.gov (United States)

Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

2013-11-01

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Energy Technology Data Exchange (ETDEWEB)

Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

2013-11-11

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Wavelength tuning of porous silicon microcavities

International Nuclear Information System (INIS)

Mulders, J.; Reece, P.; Zheng, W.H.; Lerondel, G.; Sun, B.; Gal, M.

2002-01-01

Full text: In the last decade much attention has been given to porous silicon (PS) for optoelectronic applications, which include efficient room temperature light emission as well as microcavity formation. Due to the large specific surface area, the use of porous silicon microcavities (PSMs) has been proposed for chemical sensing. Large wavelength shifts have indicated that the optical properties of PSMs are indeed strongly dependent on the environment. In this paper, we report the shifting of the resonance frequency of high quality PSMs, with the aim of tuning a future PS device to a certain required wavelength. The PSM samples were prepared by anodically etching p + -doped (5mΩcm) bulk silicon wafer in a solution (25%) of aqueous HF and ethanol. The device structure consisted of a PS layer sandwiched between 2 stacks of thin PS layers with alternating high and low effective refractive indices (RI), i.e. distributed Bragg mirrors (DBM). The layer thickness depends on the etch time while the porosity and hence refractive index is determined by the current density as the Si is etched. The position and the width of the stop-band can be fully controlled by the design of the DBMs, with the microcavity resonance mode sitting within the stop-band. We achieved tuning of the microcavity resonance by a number of methods, including temperature dependent tuning. The temperature induced wavelength shift was found to be of the order of 10 -15 nm. Computer modeling of these changes in the reflectivity spectra allowed us to quantify the changes of the effective refractive index and the respective layer thicknesses

Single photon sources with single semiconductor quantum dots

Science.gov (United States)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm

Energy Technology Data Exchange (ETDEWEB)

Pashkeev, D. A., E-mail: d.pashkeev@gmail.com; Selivanov, Yu. G.; Chizhevskii, E. G.; Zasavitskiy, I. I. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

2016-02-15

The optical properties of epitaxial layers and heterostructures based on Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) are analyzed in the context of designing Bragg mirrors and vertical-cavity surface-emitting lasers for the midinfrared spectral range. It is shown that the optimal heteropair for laser microcavities is Pb{sub 1–x}Eu{sub x}Te(x ≈ 0.06)/EuTe. On the basis of this heteropair, highly reflective Bragg mirrors consisting of just three periods and featuring a reflectance of R ⩾ 99.8% at the center of the stop band are grown by molecular-beam epitaxy on BaF{sub 2} (111) substrates. Single-mode optically pumped vertical-cavity surface-emitting lasers for the 4–5 μm spectral range operating at liquid-nitrogen temperatures are demonstrated.

High-fidelity quantum gates on quantum-dot-confined electron spins in low-Q optical microcavities

Science.gov (United States)

Li, Tao; Gao, Jian-Cun; Deng, Fu-Guo; Long, Gui-Lu

2018-04-01

We propose some high-fidelity quantum circuits for quantum computing on electron spins of quantum dots (QD) embedded in low-Q optical microcavities, including the two-qubit controlled-NOT gate and the multiple-target-qubit controlled-NOT gate. The fidelities of both quantum gates can, in principle, be robust to imperfections involved in a practical input-output process of a single photon by converting the infidelity into a heralded error. Furthermore, the influence of two different decay channels is detailed. By decreasing the quality factor of the present microcavity, we can largely increase the efficiencies of these quantum gates while their high fidelities remain unaffected. This proposal also has another advantage regarding its experimental feasibility, in that both quantum gates can work faithfully even when the QD-cavity systems are non-identical, which is of particular importance in current semiconductor QD technology.

The role of phonon scattering in the indistinguishability of photons emitted from semiconductor cavity QED systems

DEFF Research Database (Denmark)

Nielsen, Per Kær; Gregersen, Niels; Mørk, Jesper

2013-01-01

A solid-state single-photon source emitting indistinguishable photons on-demand is an essential component of linear optics quantum computing schemes. However, the emitter will inevitably interact with the solid-state environment causing decoherence and loss of indistinguishability. In this paper......, we present a comprehensive theoretical treatment of the influence of phonon scattering on the coherence properties of single photons emitted from semiconductor quantum dots. We model decoherence using a full microscopic theory and compare with standard Markovian approximations employing Lindblad...

Detection of the scintillation light emitted from direct-bandgap compound semiconductors by a Si avalanche photodiode at 150 mK

International Nuclear Information System (INIS)

Yasumune, Takashi; Takayama, Nobuyasu; Maehata, Keisuke; Ishibashi, Kenji; Umeno, Takahiro

2008-01-01

In this work, the direct-bandgap compound semiconductor materials are irradiated by α particles emitted from 241 Am for the detection of scintillation light at the temperature of 150 mK. For the irradiation experiment, two disk shaped samples were fabricated from an epoxy resin mixed with the powder of PbI 2 and CuI, respectively. Each disk-samples was cooled down to 150 mK by a compact liquid helium-free dilution refrigerator. A Si avalanche photodiode (APD) was employed for detecting the scintillation light emitted from the disk-sample inside the refrigerator. The detection signal current of Si APD was converted into the voltage pulses by a charge sensitive preamplifier. The voltage pulses of the scintillation light emitted from the direct-bandgap semiconductors were observed at the temperature of 150 mK. (author)

On-demand semiconductor single-photon source with near-unity indistinguishability.

Science.gov (United States)

He, Yu-Ming; He, Yu; Wei, Yu-Jia; Wu, Dian; Atatüre, Mete; Schneider, Christian; Höfling, Sven; Kamp, Martin; Lu, Chao-Yang; Pan, Jian-Wei

2013-03-01

Single-photon sources based on semiconductor quantum dots offer distinct advantages for quantum information, including a scalable solid-state platform, ultrabrightness and interconnectivity with matter qubits. A key prerequisite for their use in optical quantum computing and solid-state networks is a high level of efficiency and indistinguishability. Pulsed resonance fluorescence has been anticipated as the optimum condition for the deterministic generation of high-quality photons with vanishing effects of dephasing. Here, we generate pulsed single photons on demand from a single, microcavity-embedded quantum dot under s-shell excitation with 3 ps laser pulses. The π pulse-excited resonance-fluorescence photons have less than 0.3% background contribution and a vanishing two-photon emission probability. Non-postselective Hong-Ou-Mandel interference between two successively emitted photons is observed with a visibility of 0.97(2), comparable to trapped atoms and ions. Two single photons are further used to implement a high-fidelity quantum controlled-NOT gate.

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

Pump-Power-Driven Mode Switching in a Microcavity Device and Its Relation to Bose-Einstein Condensation

Directory of Open Access Journals (Sweden)

H. A. M. Leymann

2017-06-01

Full Text Available We investigate the switching of the coherent emission mode of a bimodal microcavity device, occurring when the pump power is varied. We compare experimental data to theoretical results and identify the underlying mechanism based on the competition between the effective gain, on the one hand, and the intermode kinetics, on the other. When the pumping is ramped up, above a threshold, the mode with the largest effective gain starts to emit coherent light, corresponding to lasing. In contrast, in the limit of strong pumping, it is the intermode kinetics that determines which mode acquires a large occupation and shows coherent emission. We point out that this latter mechanism is akin to the equilibrium Bose-Einstein condensation of massive bosons. Thus, the mode switching in our microcavity device can be viewed as a minimal instance of Bose-Einstein condensation of photons. Moreover, we show that the switching from one cavity mode to the other always occurs via an intermediate phase where both modes are emitting coherent light and that it is associated with both superthermal intensity fluctuations and strong anticorrelations between both modes.

Realization and optical characterisation of micro-cavities in strong coupling regime using self-assembled multi-quantum wells structure of 2D perovskites

International Nuclear Information System (INIS)

Lanty, Gaetan

2011-01-01

The research work which is reported in this manuscript focuses on 2D perovskites and their use to obtain micro-cavities working in the strong coupling regime. Perovskite structure forms a multi-quantum wells in which the excitonic states have a high oscillator strength and a large binding energy (a few 100 MeV) due to quantum and dielectric confinement effects. A first axis of this work was to collect information on the excitonic properties of these materials. On a particular perovskite (PEPI), we performed photoluminescence and pump-probe measurements, which seem to suggest the existence, under high excitation density, a process of Auger recombination of excitons. A second research axis was to put in cavity thin layers of some perovskites. With PEPI and PEPC perovskites, we have shown that the realization of micro-cavities with a quality factor of the order of ten is sufficient to obtain at room temperature, the strong coupling regime in absorption and emission with Rabi splitting up to 220 MeV. A bottleneck effect has been clearly demonstrated for the PEPI microcavity. We have also shown that perovskites could be associated with inorganic semiconductors in 'hybrid' micro-cavities. According Agranovich et al., these micro-cavities could present polariton lasing with lower quality factors. To this end, the ZnO/MFMPB association seems particularly promising. (author)

Single Nanoparticle Detection Using Optical Microcavities.

Science.gov (United States)

Zhi, Yanyan; Yu, Xiao-Chong; Gong, Qihuang; Yang, Lan; Xiao, Yun-Feng

2017-03-01

Detection of nanoscale objects is highly desirable in various fields such as early-stage disease diagnosis, environmental monitoring and homeland security. Optical microcavity sensors are renowned for ultrahigh sensitivities due to strongly enhanced light-matter interaction. This review focuses on single nanoparticle detection using optical whispering gallery microcavities and photonic crystal microcavities, both of which have been developing rapidly over the past few years. The reactive and dissipative sensing methods, characterized by light-analyte interactions, are explained explicitly. The sensitivity and the detection limit are essentially determined by the cavity properties, and are limited by the various noise sources in the measurements. On the one hand, recent advances include significant sensitivity enhancement using techniques to construct novel microcavity structures with reduced mode volumes, to localize the mode field, or to introduce optical gain. On the other hand, researchers attempt to lower the detection limit by improving the spectral resolution, which can be implemented by suppressing the experimental noises. We also review the methods of achieving a better temporal resolution by employing mode locking techniques or cavity ring up spectroscopy. In conclusion, outlooks on the possible ways to implement microcavity-based sensing devices and potential applications are provided. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Top emitting white OLEDs

Energy Technology Data Exchange (ETDEWEB)

Freitag, Patricia; Luessem, Bjoern; Leo, Karl [Technische Universitaet Dresden, Institut fuer Angewandte Photophysik, George-Baehr-Strasse 1, 01069 Dresden (Germany)

2009-07-01

Top emitting organic light emitting diodes (TOLEDs) provide a number of interesting opportunities for new applications, such as the opportunity to fabricate ITO-free devices by using opaque substrates. This makes it possible to manufacture low cost OLEDs for signage and lighting applications. A general top emitting device consists of highly reflecting metal contacts as anode and semitransparent cathode, the latter one for better outcouling reasons. In between several organic materials are deposited as charge transporting, blocking, and emission layers. Here, we show a top emitting white organic light emitting diode with silver electrodes arranged in a p-i-n structure with p- and n-doped charge transport layers. The centrical emission layer consists of two phosphorescent (red and green) and one fluorescent (blue) emitter systems separated by an ambipolar interlayer to avoid mutual exciton quenching. By adding an additional dielectric capping layer on top of the device stack, we achieve a reduction of the strong microcavity effects which appear due to the high reflection of both metal electrodes. Therefore, the outcoupled light shows broad and nearly angle-independent emission spectra, which is essential for white light emitting diodes.

Spatially selective hydrogen irradiation of dilute nitride semiconductors: a brief review

Science.gov (United States)

Felici, Marco; Pettinari, Giorgio; Biccari, Francesco; Capizzi, Mario; Polimeni, Antonio

2018-05-01

We provide a brief survey of the most recent results obtained by performing spatially selective hydrogen irradiation of dilute nitride semiconductors. The striking effects of the formation of stable N–H complexes in these compounds—coupled to the ultrasharp diffusion profile of H therein—can be exploited to tailor the structural (lattice constant) and optoelectronic (energy gap, refractive index, electron effective mass) properties of the material in the growth plane, with a spatial resolution of a few nm. This can be applied to the fabrication of site-controlled quantum dots (QDs) and wires, but also to the realization of the optical elements required for the on-chip manipulation and routing of qubits in fully integrated photonic circuits. The fabricated QDs—which have shown the ability to emit single photons—can also be deterministically coupled with photonic crystal microcavities, proving their inherent suitability to act as integrated light sources in complex nanophotonic devices.

Organic light emitting diode with surface modification layer

Science.gov (United States)

Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

2017-09-12

An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

Exceptional points enhance sensing in an optical microcavity

Science.gov (United States)

Chen, Weijian; Kaya Özdemir, Şahin; Zhao, Guangming; Wiersig, Jan; Yang, Lan

2017-08-01

Sensors play an important part in many aspects of daily life such as infrared sensors in home security systems, particle sensors for environmental monitoring and motion sensors in mobile phones. High-quality optical microcavities are prime candidates for sensing applications because of their ability to enhance light-matter interactions in a very confined volume. Examples of such devices include mechanical transducers, magnetometers, single-particle absorption spectrometers, and microcavity sensors for sizing single particles and detecting nanometre-scale objects such as single nanoparticles and atomic ions. Traditionally, a very small perturbation near an optical microcavity introduces either a change in the linewidth or a frequency shift or splitting of a resonance that is proportional to the strength of the perturbation. Here we demonstrate an alternative sensing scheme, by which the sensitivity of microcavities can be enhanced when operated at non-Hermitian spectral degeneracies known as exceptional points. In our experiments, we use two nanoscale scatterers to tune a whispering-gallery-mode micro-toroid cavity, in which light propagates along a concave surface by continuous total internal reflection, in a precise and controlled manner to exceptional points. A target nanoscale object that subsequently enters the evanescent field of the cavity perturbs the system from its exceptional point, leading to frequency splitting. Owing to the complex-square-root topology near an exceptional point, this frequency splitting scales as the square root of the perturbation strength and is therefore larger (for sufficiently small perturbations) than the splitting observed in traditional non-exceptional-point sensing schemes. Our demonstration of exceptional-point-enhanced sensitivity paves the way for sensors with unprecedented sensitivity.

Cost-effective optical fiber pressure sensor based on intrinsic Fabry-Perot interferometric micro-cavities

Science.gov (United States)

Domingues, M. Fátima; Rodriguez, Camilo A.; Martins, Joana; Tavares, Cátia; Marques, Carlos; Alberto, Nélia; André, Paulo; Antunes, Paulo

2018-05-01

In this work, a cost-effective procedure to manufacture optical fiber pressure sensors is presented. This has a high relevance for integration in robotic exoskeletons or for gait plantar pressure monitoring within the physical rehabilitation scenarios, among other applications. The sensing elements are based on Fabry-Perot interferometric (FPI) micro-cavities, created from the recycling of optical fibers previously destroyed by the catastrophic fuse effect. To produce the pressure sensors, the fiber containing the FPI micro-cavities was embedded in an epoxy resin cylinder used as pressure transducer and responsible to transfer the pressure applied on its surface to the optical fiber containing the FPI micro-cavity. Before the embedding process, some FPI sensors were also characterized to strain variations. After that, the effect of the encapsulation of the FPI structure into the resin was assessed, from which a slight decrease on the FPI interferogram fringes visibility was verified, indicating a small increase in the micro-cavity length. Up on the sensors characterization, a linear dependence of the wavelength shift with the induced pressure was obtained, which leads to a maximum sensitivity of 59.39 ± 1.7 pm/kPa. Moreover, direct dependence of the pressure sensitivity with the micro-cavity volume and length was found.

Surface Plasmon Polariton-Assisted Long-Range Exciton Transport in Monolayer Semiconductor Lateral Heterostructure

Science.gov (United States)

Shi, Jinwei; Lin, Meng-Hsien; Chen, Yi-Tong; Estakhri, Nasim Mohammadi; Tseng, Guo-Wei; Wang, Yanrong; Chen, Hung-Ying; Chen, Chun-An; Shih, Chih-Kang; Alã¹, Andrea; Li, Xiaoqin; Lee, Yi-Hsien; Gwo, Shangjr

Recently, two-dimensional (2D) semiconductor heterostructures, i.e., atomically thin lateral heterostructures (LHSs) based on transition metal dichalcogenides (TMDs) have been demonstrated. In an optically excited LHS, exciton transport is typically limited to a rather short spatial range ( 1 micron). Furthermore, additional losses may occur at the lateral interfacial regions. Here, to overcome these challenges, we experimentally implement a planar metal-oxide-semiconductor (MOS) structure by placing a monolayer of WS2/MoS2 LHS on top of an Al2O3 capped Ag single-crystalline plate. We found that the exciton transport range can be extended to tens of microns. The process of long-range exciton transport in the MOS structure is confirmed to be mediated by an exciton-surface plasmon polariton-exciton conversion mechanism, which allows a cascaded energy transfer process. Thus, the planar MOS structure provides a platform seamlessly combining 2D light-emitting materials with plasmonic planar waveguides, offering great potential for developing integrated photonic/plasmonic functionalities.

Organic semiconductors in a spin

CERN Document Server

Samuel, I

2002-01-01

A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Tallarida, M.

2005-05-15

This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

Surface passivation process of compound semiconductor material using UV photosulfidation

Science.gov (United States)

Ashby, Carol I. H.

1995-01-01

A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

Electrically driven surface plasmon light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

OpenAIRE

Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

2000-01-01

We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

A new microcavity design for single molecule detection

International Nuclear Information System (INIS)

Steiner, M.; Schleifenbaum, F.; Stupperich, C.; Failla, A.V.; Hartschuh, A.; Meixner, A.J.

2006-01-01

We present a new microcavity design which allows for efficient detection of single molecules by measuring the molecular fluorescence emission coupled into a resonant cavity mode. The Fabry-Perot-type microresonator consists of two silver mirrors separated by a thin polymer film doped with dye molecules in ultralow concenctration. By slightly tilting one of the mirrors different cavity lengths can be selected within the same sample. Locally, on a μm scale, the microcavity still acts as a planar Fabry-Perot resonator. Using scanning confocal fluorescence microscopy, single emitters on resonance with a single mode of the microresonator can be spatially addressed. Our microcavity is demonstrated to be well-suited for investigating the coupling mechanism between single quantum emitters and single modes of the electromagnetic field. The microcavity layout could be integrated in a lab-on-a-microchip design for ultrasensitive microfluidic analytics and can be considered as an important improvement for single photon sources based on single molecules operating at room temperature

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2013-01-01

This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

Semiconductor crystal high resolution imager

Science.gov (United States)

Levin, Craig S. (Inventor); Matteson, James (Inventor)

2011-01-01

A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

Synthetic holography based on scanning microcavity

Directory of Open Access Journals (Sweden)

A. Di Donato

2015-11-01

Full Text Available Synthetic optical holography (SOH is an imaging technique, introduced in scanning microscopy to record amplitude and phase of a scattered field from a sample. In this paper, it is described a novel implementation of SOH through a lens-free low-coherence system, based on a scanning optical microcavity. This technique combines the low-coherence properties of the source with the mutual interference of scattered waves and the resonant behavior of a micro-cavity, in order to realize a high sensitive imaging system. Micro-cavity is compact and realized by approaching a cleaved optical fiber to the sample. The scanning system works in an open-loop configuration without the need for a reference wave, usually required in interferometric systems. Measurements were performed over calibration samples and a lateral resolution of about 1 μm is achieved by means of an optical fiber with a Numerical Aperture (NA equal to 0.1 and a Mode Field Diameter (MDF of 5.6 μm.

Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

KAUST Repository

Sun, Haiding

2017-12-19

Spontaneously-grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still suffer from low efficiency partially because of the strong surface recombination caused by surface states, i.e., oxidized surface and high density surface states. Several surface passivation methods have been introduced to reduce surface non-radiative recombination by using complex and toxic chemicals. Here, we present an effective method to suppress such undesirable surface recombination of the AlGaN nanowires via diluted potassium hydroxide (KOH) solution; a commonly used chemical process in semiconductor fabrication which is barely used as surface passivation solution in self-assembled nitride-based nanowires. The transmission electron microscopy investigation on the samples reveals almost intact nanowire structures after the passivation process. We demonstrated an approximately 49.7% enhancement in the ultraviolet light output power after 30-s KOH treatment on AlGaN nanowires grown on titanium-coated silicon substrates. We attribute such a remarkable enhancement to the removal of the surface dangling bonds and oxidized nitrides (Ga-O or Al-O bonds) at the surface as we observe the change of the carrier lifetime before and after the passivation. Thus, our results highlight the possibility of employing this process for the realization of high performance nanowire UV emitters.

Metal Nanoparticles/Porous Silicon Microcavity Enhanced Surface Plasmon Resonance Fluorescence for the Detection of DNA

Directory of Open Access Journals (Sweden)

Jiajia Wang

2018-02-01

Full Text Available A porous silicon microcavity (PSiMC with resonant peak wavelength of 635 nm was fabricated by electrochemical etching. Metal nanoparticles (NPs/PSiMC enhanced fluorescence substrates were prepared by the electrostatic adherence of Au NPs that were distributed in PSiMC. The Au NPs/PSiMC device was used to characterize the target DNA immobilization and hybridization with its complementary DNA sequences marked with Rhodamine red (RRA. Fluorescence enhancement was observed on the Au NPs/PSiMC device substrate; and the minimum detection concentration of DNA ran up to 10 pM. The surface plasmon resonance (SPR of the MC substrate; which is so well-positioned to improve fluorescence enhancement rather the fluorescence enhancement of the high reflection band of the Bragg reflector; would welcome such a highly sensitive in biosensor.

Metal Nanoparticles/Porous Silicon Microcavity Enhanced Surface Plasmon Resonance Fluorescence for the Detection of DNA.

Science.gov (United States)

Wang, Jiajia; Jia, Zhenhong

2018-02-23

A porous silicon microcavity (PSiMC) with resonant peak wavelength of 635 nm was fabricated by electrochemical etching. Metal nanoparticles (NPs)/PSiMC enhanced fluorescence substrates were prepared by the electrostatic adherence of Au NPs that were distributed in PSiMC. The Au NPs/PSiMC device was used to characterize the target DNA immobilization and hybridization with its complementary DNA sequences marked with Rhodamine red (RRA). Fluorescence enhancement was observed on the Au NPs/PSiMC device substrate; and the minimum detection concentration of DNA ran up to 10 pM. The surface plasmon resonance (SPR) of the MC substrate; which is so well-positioned to improve fluorescence enhancement rather the fluorescence enhancement of the high reflection band of the Bragg reflector; would welcome such a highly sensitive in biosensor.

Characterization of metal-functionalized flax orbitide as a new candidate for light-emitting semiconductor

International Nuclear Information System (INIS)

Bauer, Robert; Bazylewski, Paul; Chang, Gap Soo; Jadhav, Pramodkumar; Shen, Jianheng; Okinyo-Owiti, Denis Paskal; Reaney, Martin; Yang, Jian; Sammynaiken, Ramaswami

2015-01-01

Organic materials display promise in numerous electronic applications, complimentary to traditional semi-conducting materials. Cyclolinopeptides show promise in light-emitting applications as an organic semiconductor. Photoluminescence measurements indicate charge transfer between the peptide and the metal, resulting in an increase in intensity of the emission from around the metal in the Cyclolinopeptide complex. Complementary X-ray absorption near-edge spectroscopy (XANES) shows a change in occupation of energy states in the peptide when complexed with the metal, indicating charge transfer, but peak positions show the peptide is not chemically changed by the metal. Combining X-ray emission and XANES provides element specific partial density of states, to estimate the element specific energy gap which is the proposed emission range for the peptide material. Organic light emitting diode devices have been fabricated, although no measurable emission has been seen as of yet. The devices have diode like current-voltage characteristics showing the peptide is semi-conducting with a threshold voltage of approximately 2.5 V. (paper)

SERS-active ZnO/Ag hybrid WGM microcavity for ultrasensitive dopamine detection

Science.gov (United States)

Lu, Junfeng; Xu, Chunxiang; Nan, Haiyan; Zhu, Qiuxiang; Qin, Feifei; Manohari, A. Gowri; Wei, Ming; Zhu, Zhu; Shi, Zengliang; Ni, Zhenhua

2016-08-01

Dopamine (DA) is a potential neuro modulator in the brain which influences a variety of motivated behaviors and plays a key role in life science. A hybrid ZnO/Ag microcavity based on Whispering Gallery Mode (WGM) effect has been developed for ultrasensitive detection of dopamine. Utilizing this effect of structural cavity mode, a Raman signal of R6G (5 × 10-3 M) detected by this designed surface-enhanced Raman spectroscopy (SERS)-active substrate was enhanced more than 10-fold compared with that of ZnO film/Ag substrate. Also, this hybrid microcavity substrate manifests high SERS sensitivity to rhodamine 6 G and detection limit as low as 10-12 M to DA. The Localized Surface Plasmons of Ag nanoparticles and WGM-enhanced light-matter interaction mainly contribute to the high SERS sensitivity and help to achieve a lower detection limit. This designed SERS-active substrate based on the WGM effect has the potential for detecting neurotransmitters in life science.

Large-area and bright pulsed electroluminescence in monolayer semiconductors

KAUST Repository

Lien, Der-Hsien; Amani, Matin; Desai, Sujay B.; Ahn, Geun Ho; Han, Kevin; He, Jr-Hau; Ager, Joel W.; Wu, Ming C.; Javey, Ali

2018-01-01

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Large-area and bright pulsed electroluminescence in monolayer semiconductors

KAUST Repository

Lien, Der-Hsien

2018-04-04

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Engineering of Semiconductor Nanocrystals for Light Emitting Applications

Directory of Open Access Journals (Sweden)

Francesco Todescato

2016-08-01

Full Text Available Semiconductor nanocrystals are rapidly spreading into the display and lighting markets. Compared with liquid crystal and organic LED displays, nanocrystalline quantum dots (QDs provide highly saturated colors, wide color gamut, resolution, rapid response time, optical efficiency, durability and low cost. This remarkable progress has been made possible by the rapid advances in the synthesis of colloidal QDs and by the progress in understanding the intriguing new physics exhibited by these nanoparticles. In this review, we provide support to the idea that suitably engineered core/graded-shell QDs exhibit exceptionally favorable optical properties, photoluminescence and optical gain, while keeping the synthesis facile and producing QDs well suited for light emitting applications. Solid-state laser emitters can greatly profit from QDs as efficient gain materials. Progress towards fabricating low threshold, solution processed DFB lasers that are optically pumped using one- and two-photon absorption is reviewed. In the field of display technologies, the exploitation of the exceptional photoluminescence properties of QDs for LCD backlighting has already advanced to commercial levels. The next big challenge is to develop the electroluminescence properties of QD to a similar state. We present an overview of QLED devices and of the great perspectives for next generation display and lighting technologies.

[Influence of MnO3 on Photoelectric Performance in Organic Light Emitting Diodes].

Science.gov (United States)

Guan, Yun-xia; Chen, Li-jia; Chen, Ping; Fu, Xiao-qiang; Niu, Lian-bin

2016-03-01

Organic Light Emitting Diodes (OLEDs) has been a promising new research point that has received much attention recently. Emission in a conventional OLED originates from the recombination of carriers (electrons and holes) that are injected from external electrodes. In the device, Electrons, on the other hand, are injected from the Al cathode to an electron-transporting layer and travel to the same emissive zone. Holes are injected from the transparent ITO anode to a hole-transporting layer and holes reach an emitting zone through the holetransporting layer. Electrons and holes recombine at the emissive film to formsinglet excited states, followed by emissive light. It is because OLED is basically an optical device and its structure consists of organic or inorganic layers of sub-wavelength thickness with different refractive indices. When the electron and holes are injected through the electrodes, they combine in the emission zone emitting the photons. These photons will have the reflection and transmission at each interface and the interference will determine the intensity profile. The emissive light reflected at the interfaces or the metallic electrode returns to the emissive layer and affects the radiation current efficiency. Microcavity OLED can produce saturated colors and narrow the emission spetrum as a new kind of technique. In the paper, we fabricate microcavity OLED using glass substrate. Ag film acts as the anode reflector mirror; NPB serves as the hole-transporting material; Alq3 is electron-transporting material and organic emissive material; Ag film acts as cathode reflector mirror. The microcavity OLED structures named as A, B, C and D are glass/Ag(15 nm)/MoO3 (x nm)/NPB(50 nm)/Alq3 (60 nm)/A1(100 nm). Here, A, x = 4 nm; B, x = 7 nm; C, x = 10 nm; D, x = 13 nm. The characteristic voltage, brightness and current of these devices are investigated in the electric field. The luminance from the Devices A, B, C and D reaches the luminance of 928, 1 369, 2

A parametric study on the PD pulses activity within micro-cavities

Science.gov (United States)

Ganjovi, Alireza A.

2016-03-01

A two-dimensional kinetic model has been used to parametric investigation of the spark-type partial discharge pulses inside the micro-cavities. The model is based on particle-in-cell methods with Monte Carlo Collision techniques for modeling of collisions. Secondary processes like photo-emission and cathode-emission are considered. The micro-cavity may be sandwiched between two metallic conductors or two dielectrics. The discharge within the micro-cavity is studied in conjunction with the external circuit. The model is used to successfully simulate the evolution of the discharge and yield useful information about the build-up of space charge within the micro-cavity and the consequent modification of the applied electric field. The phase-space scatter plots for electrons, positive, and negative ions are obtained in order to understand the manner in which discharge progresses over time. The rise-time and the magnitude of the discharge current pulse are obtained and are seen to be affected by micro-cavity dimensions, gas pressure within the micro-cavity, and the permittivity of surrounding dielectrics. The results have been compared with existing experimental, theoretical, and computational results, wherever possible. An attempt has been made to understand the nature of the variations in terms of the physical processes involved.

Solid-state cavity quantum electrodynamics using quantum dots

International Nuclear Information System (INIS)

Gerard, J.M.; Gayral, B.; Moreau, E.; Robert, I.; Abram, I.

2001-01-01

We review the recent development of solid-state cavity quantum electrodynamics using single self-assembled InAs quantum dots and three-dimensional semiconductor microcavities. We discuss first prospects for observing a strong coupling regime for single quantum dots. We then demonstrate that the strong Purcell effect observed for single quantum dots in the weak coupling regime allows us to prepare emitted photons in a given state (the same spatial mode, the same polarization). We present finally the first single-mode solid-state source of single photons, based on an isolated quantum dot in a pillar microcavity. This optoelectronic device, the first ever to rely on a cavity quantum electrodynamics effect, exploits both Coulomb interaction between trapped carriers in a single quantum dot and single mode photon tunneling in the microcavity. (author)

Tunneling spectroscopy on semiconductors with a low surface state density

OpenAIRE

Sommerhalter, Christof; Matthes, Thomas W.; Boneberg, Johannes; Leiderer, Paul; Lux-Steiner, Martha Christina

1997-01-01

A detailed study of tunneling spectroscopy concerning semiconductors with a low surface state density is presented. For this purpose, I V curves under dark conditions and under illumination were measured on the (0001) van der Waals surface of a p-type WS2 single crystal, which is known to be free of intrinsic surface states. The measurements are interpreted by an analytical one-dimensional metal-insulator-semiconductor model, which shows that the presence of the finite tunneling current has ...

Seeding of Polariton Stimulation in a Homogeneously Broadened Microcavity

DEFF Research Database (Denmark)

Østergaard, John Erland; Langbein, Wolfgang Werner; Jensen, Jacob Riis

2000-01-01

In time-resolved light emission from a high-quality semiconductor microcavity after pulsed excitation suitable for angle-resonant polariton-polariton scattering on the lower-polariton branch, we find strong evidence for final-state stimulation of this process. The self-stimulated emission...... and the intensity of this emission can be controlled. The time-resolved data and the density dependences are in agreement with a rate equation model neglecting polarization mixing effects. This model gives a coupling coefficient of b(LP,k)=0 = 2.4 x 10(-9) cm(4) s(-1) for the stimulated angle-resonant polariton......, following single-pulse excitation, appears on a fast time scale of only a few lens of ps with a maximum at 15 ps. This is in striking contrast to the photoluminescence decay time of 110 ps observed in the low-density limit. By injection of polaritons into the final state by a seeding pulse, the dynamics...

White top emitting OLED with angle independent emission characteristic

Energy Technology Data Exchange (ETDEWEB)

Thomschke, Michael; Freitag, Patricia; Schwartz, Gregor; Nitsche, Robert; Walzer, Karsten; Leo, Karl [Technische Universitaet Dresden, Institut fuer Angewandte Photophysik, Georg-Baehr-Strasse 1, 01062 Dresden (Germany)

2008-07-01

The general device structure of a top emitting organic light emitting diode (OLED) consists of several organic layers sandwiched in between two metal contacts, with the top one being semitransparent for light outcoupling reasons. Due to the high reflectivity of the electrodes, strong microcavity effects occur which lead to a preferred emission of light of a certain wavelength with main outcoupling in forward direction. This creates rather narrow emission bands, accompanied by strong spectral shifts upon viewing angle variation. By using an organic capping layer on top of the semitransparent metal contact, this unwanted effect can be reduced. This is important especially for white light emission for the use of OLEDs in future lighting applications. Our optical simulations show that the strong angular dependence of the emission color almost vanishes. To verify the simulations we study white top emitting OLEDs based on an approach which are adapted to the top emitting case.

Transverse-mode-selectable microlens vertical-cavity surface-emitting laser

DEFF Research Database (Denmark)

Chung, Il-Sug; Debernardi, Pierluigi; Lee, Yong Tak

2010-01-01

A new vertical-cavity surface-emitting laser structure employing a thin microlens is suggested and numerically investigated. The laser can be made to emit in either a high-power Gaussian-shaped single-fundamental mode or a high-power doughnut-shaped higher-order mode. The physical origin...

Acoustic trapping in bubble-bounded micro-cavities

Science.gov (United States)

O'Mahoney, P.; McDougall, C.; Glynne-Jones, P.; MacDonald, M. P.

2016-12-01

We present a method for controllably producing longitudinal acoustic trapping sites inside microfluidic channels. Air bubbles are injected into a micro-capillary to create bubble-bounded `micro-cavities'. A cavity mode is formed that shows controlled longitudinal acoustic trapping between the two air/water interfaces along with the levitation to the centre of the channel that one would expect from a lower order lateral mode. 7 μm and 10 μm microspheres are trapped at the discrete acoustic trapping sites in these micro-cavities.We show this for several lengths of micro-cavity.

Low-frequency active surface plasmon optics on semiconductors

NARCIS (Netherlands)

Gómez Rivas, J.; Kuttge, M.; Kurz, H.; Haring Bolivar, P.; Sánchez-Gil, J.A.

2006-01-01

A major challenge in the development of surface plasmon optics or plasmonics is the active control of the propagation of surface plasmon polaritons (SPPs). Here, we demonstrate the feasibility of low-frequency active plasmonics using semiconductors. We show experimentally that the Bragg scattering

Contacts to semiconductors

International Nuclear Information System (INIS)

Tove, P.A.

1975-08-01

Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

Science.gov (United States)

Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

Theory of quasiparticle surface states in semiconductor surfaces

International Nuclear Information System (INIS)

Hybertsen, M.S.; Louie, S.G.

1988-01-01

A first-principles theory of the quasiparticle surface-state energies on semiconductor surfaces is developed. The surface properties are calculated using a repeated-slab geometry. Many-body effects due to the electron-electron interaction are represented by the electron self-energy operator including the full surface Green's function and local fields and dynamical screening effects in the Coulomb interaction. Calculated surface-state energies for the prototypical Si(111):As and Ge(111):As surfaces are presented. The calculated energies and dispersions for the occupied surface states (resonances) are in excellent agreement with recent angle-resolved photoemission data. Predictions are made for the position of empty surface states on both surfaces which may be experimentally accessible. The resulting surface state gap at Gamma-bar for Si(111):As agrees with recent scanning-tunneling-spectroscopy measurements. Comparison of the present results to eigenvalues from the local-density-functional calculation reveals substantial corrections for the gaps between empty and occupied surface states. This correction is found to depend on the character of the surface states involved

Electroless silver plating of the surface of organic semiconductors.

Science.gov (United States)

Campione, Marcello; Parravicini, Matteo; Moret, Massimo; Papagni, Antonio; Schröter, Bernd; Fritz, Torsten

2011-10-04

The integration of nanoscale processes and devices demands fabrication routes involving rapid, cost-effective steps, preferably carried out under ambient conditions. The realization of the metal/organic semiconductor interface is one of the most demanding steps of device fabrication, since it requires mechanical and/or thermal treatments which increment costs and are often harmful in respect to the active layer. Here, we provide a microscopic analysis of a room temperature, electroless process aimed at the deposition of a nanostructured metallic silver layer with controlled coverage atop the surface of single crystals and thin films of organic semiconductors. This process relies on the reaction of aqueous AgF solutions with the nonwettable crystalline surface of donor-type organic semiconductors. It is observed that the formation of a uniform layer of silver nanoparticles can be accomplished within 20 min contact time. The electrical characterization of two-terminal devices performed before and after the aforementioned treatment shows that the metal deposition process is associated with a redox reaction causing the p-doping of the semiconductor. © 2011 American Chemical Society

Pure white-light emitting ultrasmall organic-inorganic hybrid perovskite nanoclusters.

Science.gov (United States)

Teunis, Meghan B; Lawrence, Katie N; Dutta, Poulami; Siegel, Amanda P; Sardar, Rajesh

2016-10-14

Organic-inorganic hybrid perovskites, direct band-gap semiconductors, have shown tremendous promise for optoelectronic device fabrication. We report the first colloidal synthetic approach to prepare ultrasmall (∼1.5 nm diameter), white-light emitting, organic-inorganic hybrid perovskite nanoclusters. The nearly pure white-light emitting ultrasmall nanoclusters were obtained by selectively manipulating the surface chemistry (passivating ligands and surface trap-states) and controlled substitution of halide ions. The nanoclusters displayed a combination of band-edge and broadband photoluminescence properties, covering a major part of the visible region of the solar spectrum with unprecedentedly large quantum yields of ∼12% and photoluminescence lifetime of ∼20 ns. The intrinsic white-light emission of perovskite nanoclusters makes them ideal and low cost hybrid nanomaterials for solid-state lighting applications.

Additional compound semiconductor nanowires for photonics

Science.gov (United States)

Ishikawa, F.

2016-02-01

GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

Spin noise amplification and giant noise in optical microcavity

Energy Technology Data Exchange (ETDEWEB)

Ryzhov, I. I.; Poltavtsev, S. V.; Kozlov, G. G.; Zapasskii, V. S. [Spin-Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg (Russian Federation); Kavokin, A. V. [Department of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ (United Kingdom); Spin-Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg (Russian Federation); Lagoudakis, P. V. [Department of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ (United Kingdom)

2015-06-14

When studying the spin-noise-induced fluctuations of Kerr rotation in a quantum-well microcavity, we have found a dramatic increase of the noise signal (by more than two orders of magnitude) in the vicinity of anti-crossing of the polariton branches. The effect is explained by nonlinear optical instability of the microcavity giving rise to the light-power-controlled amplification of the polarization noise signal. In the framework of the developed model of built-in amplifier, we also interpret the nontrivial spectral and intensity-related properties of the observed noise signal below the region of anti-crossing of polariton branches. The discovered effect of optically controllable amplification of broadband polarization signals in microcavities in the regime of optical instability may be of interest for detecting weak oscillations of optical anisotropy in fundamental research and for other applications in optical information processing.

Surface emitting ring quantum cascade lasers for chemical sensing

Science.gov (United States)

Szedlak, Rolf; Hayden, Jakob; Martín-Mateos, Pedro; Holzbauer, Martin; Harrer, Andreas; Schwarz, Benedikt; Hinkov, Borislav; MacFarland, Donald; Zederbauer, Tobias; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Acedo, Pablo; Lendl, Bernhard; Strasser, Gottfried

2018-01-01

We review recent advances in chemical sensing applications based on surface emitting ring quantum cascade lasers (QCLs). Such lasers can be implemented in monolithically integrated on-chip laser/detector devices forming compact gas sensors, which are based on direct absorption spectroscopy according to the Beer-Lambert law. Furthermore, we present experimental results on radio frequency modulation up to 150 MHz of surface emitting ring QCLs. This technique provides detailed insight into the modulation characteristics of such lasers. The gained knowledge facilitates the utilization of ring QCLs in combination with spectroscopic techniques, such as heterodyne phase-sensitive dispersion spectroscopy for gas detection and analysis.

Structure of metal-rich (001) surfaces of III-V compound semiconductors

DEFF Research Database (Denmark)

Kumpf, C.; Smilgies, D.; Landemark, E.

2001-01-01

The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks....

Growth of crystalline semiconductor materials on crystal surfaces

CERN Document Server

Aleksandrov, L

2013-01-01

Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physical characteristics of the processes occurring during the deposition and growth of films, the principal methods of obtaining semiconductor films and of reparing substrate surfaces on which crystalline films are grown, and the main applications of films. The second part contains data on epitaxial i

Lighting emitting microstructures in porous silicon

International Nuclear Information System (INIS)

Squire, E.

1999-01-01

Experimental and theoretical techniques are used to examine microstructuring effects on the optical properties of single layer, multilayer, single and multiple microcavity structures fabricated from porous silicon. Two important issues regarding the effects of the periodic structuring of this material are discussed. Firstly, the precise role played by this microstructuring, given that the luminescence is distributed throughout the entire structure and the low porosity layers are highly absorbing at short wavelengths. The second issue examined concerns the observed effects on the optical spectra of the samples owing to the emission bandwidth of the material being greater than the optical stopband of the structure. Measurements of the reflectivity and photoluminescence spectra of different porous silicon microstructures are presented and discussed. The results are modelled using a transfer matrix technique. The matrix method has been modified to calculate the optical spectra of porous silicon specifically by accounting for the effects of dispersion, absorption and emission within the material. Layer thickness and porosity gradients have also been included in the model. The dielectric function of the two component layers (i.e. silicon and air) is calculated using the Looyenga formula. This approach can be adapted to suit other porous semiconductors if required. Examination of the experimental results have shown that the emitted light is strongly controlled by the optical modes of the structures. Furthermore, the data display an interplay of a wide variety of effects dependent upon the structural composition. Comparisons made between the experimental and calculated reflectivity and photoluminescence spectra of many different porous silicon microstructures show very good agreement. (author)

Microcavity single virus detection and sizing with molecular sensitivity

Science.gov (United States)

Dantham, V. R.; Holler, S.; Kolchenko, V.; Wan, Z.; Arnold, S.

2013-02-01

We report the label-free detection and sizing of the smallest individual RNA virus, MS2 by a spherical microcavity. Mass of this virus is ~6 ag and produces a theoretical resonance shift ~0.25 fm upon adsorbing an individual virus at the equator of the bare microcavity, which is well below the r.m.s background noise of 2 fm. However, detection was accomplished with ease (S/N = 8, Q = 4x105) using a single dipole stimulated plasmonic-nanoshell as a microcavity wavelength shift enhancer. Analytical expressions based on the "reactive sensing principle" are developed to extract the radius of the virus from the measured signals. Estimated limit of detection for these experiments was ~0.4 ag or 240 kDa below the size of all known viruses, largest globular and elongated proteins [Phosphofructokinase (345 kDa) and Fibrinogen (390 kDa), respectively].

Computational Modeling of Photonic Crystal Microcavity Single-Photon Emitters

Science.gov (United States)

Saulnier, Nicole A.

Conventional cryptography is based on algorithms that are mathematically complex and difficult to solve, such as factoring large numbers. The advent of a quantum computer would render these schemes useless. As scientists work to develop a quantum computer, cryptographers are developing new schemes for unconditionally secure cryptography. Quantum key distribution has emerged as one of the potential replacements of classical cryptography. It relics on the fact that measurement of a quantum bit changes the state of the bit and undetected eavesdropping is impossible. Single polarized photons can be used as the quantum bits, such that a quantum system would in some ways mirror the classical communication scheme. The quantum key distribution system would include components that create, transmit and detect single polarized photons. The focus of this work is on the development of an efficient single-photon source. This source is comprised of a single quantum dot inside of a photonic crystal microcavity. To better understand the physics behind the device, a computational model is developed. The model uses Finite-Difference Time-Domain methods to analyze the electromagnetic field distribution in photonic crystal microcavities. It uses an 8-band k · p perturbation theory to compute the energy band structure of the epitaxially grown quantum dots. We discuss a method that combines the results of these two calculations for determining the spontaneous emission lifetime of a quantum dot in bulk material or in a microcavity. The computational models developed in this thesis are used to identify and characterize microcavities for potential use in a single-photon source. The computational tools developed are also used to investigate novel photonic crystal microcavities that incorporate 1D distributed Bragg reflectors for vertical confinement. It is found that the spontaneous emission enhancement in the quasi-3D cavities can be significantly greater than in traditional suspended slab

Optical micro-cavities on silicon

Science.gov (United States)

Dai, Daoxin; Liu, Erhu; Tan, Ying

2018-01-01

Silicon-based optical microcavities are very popular for many applications because of the ultra-compact footprint, easy scalability, and functional versatility. In this paper we give a discussion about the challenges of the optical microcavities on silicon and also give a review of our recent work, including the following parts. First, a near-"perfect" high-order MRR optical filter with a box-like filtering response is realized by introducing bent directional couplers to have sufficient coupling between the access waveguide and the microrings. Second, an efficient thermally-tunable MRR-based optical filter with graphene transparent nano-heater is realized by introducing transparent graphene nanoheaters. Thirdly, a polarization-selective microring-based optical filter is realized to work with resonances for only one of TE and TM polarizations for the first time. Finally, a on-chip reconfigurable optical add-drop multiplexer for hybrid mode- /wavelength-division-multiplexing systems is realized for the first time by monolithically integrating a mode demultiplexer, four MRR optical switches, and a mode multiplexer.

Detection and light enhancement of glucose oxidase adsorbed on porous silicon microcavities

Energy Technology Data Exchange (ETDEWEB)

Palestino, Gabriela [GES-UMR 5650, CNRS-Universite Montpellier II, Montpellier (France); Facultad de Ciencias Quimicas, Universidad Autonoma de San Luis Potosi, San Luis Potosi (Mexico); Martin, Marta; Legros, Rene; Cloitre, Thierry; Gergely, Csilla [GES-UMR 5650, CNRS-Universite Montpellier II, Montpellier (France); Agarwal, Vivechana [CIICAP, Universidad Autonoma del Estado de Morelos, Cuernavaca (Mexico); Zimanyi, Laszlo [EA4203, Faculte d' Odontologie, Universite Montpellier I, Montpellier (France); Institute of Biophysics, Biological Research Center, Hungarian Academy of Sciences, Szeged (Hungary)

2009-07-15

Porous silicon (PSi) structure is used as support material to detect protein infiltration and to induce fluorescence and second harmonic light enhancement from glucose oxidase (GOX). Functionalization and protein infiltration is monitored by specular reflectometry. Optical response enhancement of PSi microcavity structures compared to PSi single layers or Bragg mirrors is observed, when GOX is impregnated. Penetration of organic molecules along the PSi microcavity structure is demonstrated by energy dispersive X-ray profile. Enhanced fluorescence emission of GOX when adsorbed on PSi microcavity is evidenced by multi-photon microscopy (MPM). Second harmonic light generation is observed at some particular pores of PSi and subsequent resonance enhancement of the signal arising from the GOX adsorbed within the pores is detected. Our work evidences an improved device functionality of GOX-PSi microcavities due to strongly confined and localized light emission within these structures. This opens the way towards the application of PSi microcavity structures as amended biosensors based on their locally enhanced optical response. The second main achievement lies in the novelty of the used techniques. In contrast to the specular reflectometry used to monitor the macroscopic optical response of PSi structures, MPM presents a valuable alternative microscopic technique probing individual pores. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electronic collective modes and instabilities on semiconductor surfaces. I

International Nuclear Information System (INIS)

Muramatsu, A.; Hanke, W.

1984-01-01

A Green's-function theory of electronic collective modes is presented which leads to a practical scheme for a microscopic determination of surface elementary excitations in conducting as well as nonconducting solids. Particular emphasis is placed on semiconductor surfaces where the jellium approximation is not valid, due to the importance of density fluctuations on a microscopic scale (reflected in the local-field effects). Starting from the Bethe-Salpeter equation for the two-particle Green's function of the surface system, an equation of motion for the electron-hole pair is obtained. Its solutions determine the energy spectra, lifetimes, and amplitudes of the surface elementary excitations, i.e., surface plasmons, excitons, polaritons, and magnons. Exchange and correlation effects are taken into account through the random-phase and time-dependent Hartree-Fock (screened electron-hole attraction) approximations. The formalism is applied to the study of electronic (charge- and spin-density) instabilities at covalent semiconductor surfaces. Quantitative calculations for an eight-layer Si(111) slab display an instability of the ideal paramagnetic surface with respect to spin-density waves with wavelength nearly corresponding to (2 x 1) and (7 x 7) superstructures

Optical trapping of metal-dielectric nanoparticle clusters near photonic crystal microcavities.

Science.gov (United States)

Mejia, Camilo A; Huang, Ningfeng; Povinelli, Michelle L

2012-09-01

We predict the formation of optically trapped, metal-dielectric nanoparticle clusters above photonic crystal microcavities. We determine the conditions on particle size and position for a gold particle to be trapped above the microcavity. We then show that strong field redistribution and enhancement near the trapped gold nanoparticle results in secondary trapping sites for a pair of dielectric nanoparticles.

Surface and Interface Engineering of Organometallic and Two Dimensional Semiconductor

Science.gov (United States)

Park, Jun Hong

For over half a century, inorganic Si and III-V materials have led the modern semiconductor industry, expanding to logic transistor and optoelectronic applications. However, these inorganic materials have faced two different fundamental limitations, flexibility for wearable applications and scaling limitation as logic transistors. As a result, the organic and two dimensional have been studied intentionally for various fields. In the present dissertation, three different studies will be presented with followed order; (1) the chemical response of organic semiconductor in NO2 exposure. (2) The surface and stability of WSe2 in ambient air. (3) Deposition of dielectric on two dimensional materials using organometallic seeding layer. The organic molecules rely on the van der Waals interaction during growth of thin films, contrast to covalent bond inorganic semiconductors. Therefore, the morphology and electronic property at surface of organic semiconductor in micro scale is more sensitive to change in gaseous conditions. In addition, metal phthalocyanine, which is one of organic semiconductor materials, change their electronic property as reaction with gaseous analytes, suggesting as potential chemical sensing platforms. In the present part, the growth behavior of metal phthalocyanine and surface response to gaseous condition will be elucidated using scanning tunneling microscopy (STM). In second part, the surface of layered transition metal dichalcogenides and their chemical response to exposure ambient air will be investigated, using STM. Layered transition metal dichalcogenides (TMDs) have attracted widespread attention in the scientific community for electronic device applications because improved electrostatic gate control and suppression of short channel leakage resulted from their atomic thin body. To fabricate the transistor based on TMDs, TMDs should be exposed to ambient conditions, while the effect of air exposure has not been understood fully. In this part

Hybrid perovskites: Approaches towards light-emitting devices

KAUST Repository

Alias, Mohd Sharizal

2016-10-06

The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

Hybrid perovskites: Approaches towards light-emitting devices

KAUST Repository

Alias, Mohd Sharizal; Dursun, Ibrahim; Priante, Davide; Saidaminov, Makhsud I.; Ng, Tien Khee; Bakr, Osman; Ooi, Boon S.

2016-01-01

The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

Efficient and color-saturated inverted bottom-emitting organic light-emitting devices with a semi-transparent metal-assisted electron injection layer

Energy Technology Data Exchange (ETDEWEB)

Ho, Meng-Huan, E-mail: kinneas.ac94g@nctu.edu.t [Department of Applied Chemistry, National Chiao Tung University, 210 R, CPT Building, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan (China); Wu, Chang-Yen [Department of Photonics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chen, Teng-Ming [Department of Applied Chemistry, National Chiao Tung University, 210 R, CPT Building, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan (China); Chen, Chin H. [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2011-01-15

We report the development of highly efficient and color-saturated green fluorescent 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H, 11H-benzo[l]pyrano-[6,7,8-ij]quinolizin-11-one dye-doped inverted bottom-emitting organic light-emitting diode (IBOLED). This was enabled by the insertion of a silver (Ag) based semi-transparent metal-assisted electron injection layer between the ITO cathode and n-doped electron transporting layer. This IBOLED with ITO/Ag bilayer cathode with its synergistic microcavity effect achieved luminous efficiencies of 20.7 cd/A and 12.4 lm/W and a saturated CIE{sub x,y} of (0.22, 0.72) at 20 mA/cm{sup 2}, which are twice better than those of the conventional OLED and have over 60% improvement on IBOLED without ITO/Ag bilayer cathode.

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

Science.gov (United States)

He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

2018-05-30

Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

Photon extraction from nitride ultraviolet light-emitting devices

Science.gov (United States)

Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

2015-02-24

In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Whispering gallery mode emission from a composite system of J-aggregates and photonic microcavity

Energy Technology Data Exchange (ETDEWEB)

Melnikau, Dzmitry; Savateeva, Diana [Centro de Física de Materiales (MPC, CSIC-UPV/EHU) and Donostia International Physics Center (DIPC), Po Manuel de Lardizabal 5, Donostia, San Sebastian 20018 (Spain); Rusakov, Konstantin I. [Department of Physics, Brest State Technical University, Brest 224017 (Belarus); Rakovich, Yury P., E-mail: Yury.Rakovich@ehu.es [Centro de Física de Materiales (MPC, CSIC-UPV/EHU) and Donostia International Physics Center (DIPC), Po Manuel de Lardizabal 5, Donostia, San Sebastian 20018 (Spain); IKERBASQUE, Basque Foundation for Science, Bilbao (Spain)

2014-01-15

We report on development and characterization of Whispering Gallery Modes spherical microcavities integrated with organic dye molecules in a J-aggregate state. The microcavities are studied using micro-photoluminescence spectroscopy, and fluorescence lifetime imaging confocal microscopy. Directional emission of light from the microcavity is also experimentally demonstrated and attributed to the photonic jets generated in the microsphere. -- Highlights: • Report on the development and characterization of hybrid system consisting of thin shell of J-aggregates and spherical Whispering Gallery Mode microcavity. • An investigation of spontaneous emission rate in the shell of J-aggregates integrated with a Whispering Gallery Mode cavity. • Demonstration of directional emission from Whispering Gallery Mode cavity with J-aggregates which is highly desirable functionality for both micro- and nano-scale cavities.

Subsurface dimerization in III-V semiconductor (001) surfaces

DEFF Research Database (Denmark)

Kumpf, C.; Marks, L.D.; Ellis, D.

2001-01-01

We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms ...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

High mobility emissive organic semiconductor

Science.gov (United States)

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Surface-segregated monolayers: a new type of ordered monolayer for surface modification of organic semiconductors.

Science.gov (United States)

Wei, Qingshuo; Tajima, Keisuke; Tong, Yujin; Ye, Shen; Hashimoto, Kazuhito

2009-12-09

We report a new type of ordered monolayer for the surface modification of organic semiconductors. Fullerene derivatives with fluorocarbon chains ([6,6]-phenyl-C(61)-buryric acid 1H,1H-perfluoro-1-alkyl ester or FC(n)) spontaneously segregated as a monolayer on the surface of a [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) film during a spin-coating process from the mixture solutions, as confirmed by X-ray photoelectron spectroscopy (XPS). Ultraviolet photoelectron spectroscopy (UPS) showed the shift of ionization potentials (IPs) depending on the fluorocarbon chain length, indicating the formation of surface dipole moments. Surface-sensitive vibrational spectroscopy, sum frequency generation (SFG) revealed the ordered molecular orientations of the C(60) moiety in the surface FC(n) layers. The intensity of the SFG signals from FC(n) on the surface showed a clear odd-even effect when the length of the fluorocarbon chain was changed. This new concept of the surface-segregated monolayer provides a facile and versatile approach to modifying the surface of organic semiconductors and is applicable to various organic optoelectronic devices.

Near-infrared exciton-polaritons in strongly coupled single-walled carbon nanotube microcavities

Science.gov (United States)

Graf, Arko; Tropf, Laura; Zakharko, Yuriy; Zaumseil, Jana; Gather, Malte C.

2016-10-01

Exciton-polaritons form upon strong coupling between electronic excitations of a material and photonic states of a surrounding microcavity. In organic semiconductors the special nature of excited states leads to particularly strong coupling and facilitates condensation of exciton-polaritons at room temperature, which may lead to electrically pumped organic polariton lasers. However, charge carrier mobility and photo-stability in currently used materials is limited and exciton-polariton emission so far has been restricted to visible wavelengths. Here, we demonstrate strong light-matter coupling in the near infrared using single-walled carbon nanotubes (SWCNTs) in a polymer matrix and a planar metal-clad cavity. By exploiting the exceptional oscillator strength and sharp excitonic transition of (6,5) SWCNTs, we achieve large Rabi splitting (>110 meV), efficient polariton relaxation and narrow band emission (<15 meV). Given their high charge carrier mobility and excellent photostability, SWCNTs represent a promising new avenue towards practical exciton-polariton devices operating at telecommunication wavelengths.

High quality factor GaAs microcavity with buried bullseye defects

Science.gov (United States)

Winkler, K.; Gregersen, N.; Häyrynen, T.; Bradel, B.; Schade, A.; Emmerling, M.; Kamp, M.; Höfling, S.; Schneider, C.

2018-05-01

The development of high quality factor solid-state microcavities with low mode volumes has paved the way towards on-chip cavity quantum electrodynamics experiments and the development of high-performance nanophotonic devices. Here, we report on the implementation of a new kind of solid-state vertical microcavity, which allows for confinement of the electromagnetic field in the lateral direction without deep etching. The confinement originates from a local elongation of the cavity layer imprinted in a shallow etch and epitaxial overgrowth technique. We show that it is possible to improve the quality factor of such microcavities by a specific in-plane bullseye geometry consisting of a set of concentric rings with subwavelength dimensions. This design results in a smooth effective lateral photonic potential and therefore in a reduction of lateral scattering losses, which makes it highly appealing for experiments in the framework of exciton-polariton physics demanding tight spatial confinement.

Study of surface modifications for improved selected metal (II-VI) semiconductor based devices

Science.gov (United States)

Blomfield, Christopher James

Metal-semiconductor contacts are of fundamental importance to the operation of all semiconductor devices. There are many competing theories of Schottky barrier formation but as yet no quantitative predictive model exists to adequately explain metal-semiconductor interfaces. The II-VI compound semiconductors CdTe, CdS and ZnSe have recently come to the fore with the advent of high efficiency photovoltaic cells and short wavelength light emitters. Major problems still exist however in forming metal contacts to these materials with the desired properties. This work presents results which make a significant contribution to the theory of metal/II-VI interface behaviour in terms of Schottky barriers to n-type CdTe, CdS and ZnSe.Predominantly aqueous based wet chemical etchants were applied to the surfaces of CdTe, CdS and ZnSe which were subsequently characterised by X-ray photoelectron spectroscopy. The ionic nature of these II-VI compounds meant that they behaved as insoluble salts of strong bases and weak acids. Acid etchants induced a stoichiometric excess of semiconductor anion at the surface which appeared to be predominantly in the elemental or hydrogenated state. Alkaline etchants conversely induced a stoichiometric excess of semiconductor cation at the surface which appeared to be in an oxidised state.Metal contacts were vacuum-evaporated onto these etched surfaces and characterised by current-voltage and capacitance-voltage techniques. The surface preparation was found to have a clear influence upon the electrical properties of Schottky barriers formed to etched surfaces. Reducing the native surface oxide produced near ideal Schottky diodes. An extended study of Au, Ag and Sb contacts to [mathematical formula] substrates again revealed the formation of several discrete Schottky barriers largely independent of the metal used; for [mathematical formula]. Deep levels measured within this study and those reported in the literature led to the conclusion that Fermi

Elucidation and control of electronic properties related to organic semiconductors

International Nuclear Information System (INIS)

Yamane, Hiroyuki; Ueno, Nobuo; Seki, Kazuhiko

2009-01-01

The electronic structure of organic solids and interfaces plays a crucial role in the performance of optoelectronic devices using organic semiconductors such as light-emitting diodes, field-effect transistors, and photovoltaic cells. The functionality of these organic devices is seriously dominated by the geometric structure, which varies depending on the molecular structure and the sample preparation condition. Due to the rapid progress in sample preparation methods and surface science techniques, we can now discuss in detail the correlation of the electronic structure with the geometric structure of organic solids, films, and interfaces. This paper reviews the recent progress of studies in the geometric and electronic structures related to organic semiconductors. (author)

Voltammetric determination of metal impurities on semiconductor surface

International Nuclear Information System (INIS)

Knyazeva, E.P.; Mokrousov, G.M.; Volkova, V.N.

1995-01-01

A modification of voltamperometric method used for analysis of semiconductor surfaces which make it possible to exclude a contact between surface and background solution. This technique is based on solubility of elemental metal forms in low melting electroconductor systems (e.g., in mercury. The voltampere characteristics of amalgams formed are then studied. The suggested method is simple, rapid, and makes it possible to perform a nondestructive qualitative analysis of the sample surface area measuring about 10 -3 cm -2 and more. 4 refs.; 2 figs

A porous silicon optical microcavity for sensitive bacteria detection

International Nuclear Information System (INIS)

Li Sha; Huang Jianfeng; Cai Lintao

2011-01-01

A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak (∼10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml -1 at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml -1 . The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

A porous silicon optical microcavity for sensitive bacteria detection

Science.gov (United States)

Li, Sha; Huang, Jianfeng; Cai, Lintao

2011-10-01

A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak (~10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml - 1 at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml - 1. The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

A porous silicon optical microcavity for sensitive bacteria detection

Energy Technology Data Exchange (ETDEWEB)

Li Sha; Huang Jianfeng; Cai Lintao, E-mail: lt.cai@siat.ac.cn [CAS Key Lab of Health Informatics, Shenzhen Key Laboratory of Cancer Nanotechnology, Institute of Biomedical and Health Engineering, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055 (China)

2011-10-21

A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak ({approx}10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml{sup -1} at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml{sup -1}. The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

Composite modulation of Fano resonance in plasmonic microstructures by electric-field and microcavity

International Nuclear Information System (INIS)

Zhang, Fan; Wu, Chenyun; Yang, Hong; Hu, Xiaoyong; Gong, Qihuang

2014-01-01

Composite modulation of Fano resonance by using electric-field and microcavity simultaneously is realized in a plasmonic microstructure, which consists of a gold nanowire grating inserted into a Fabry-Perot microcavity composited of a liquid crystal layer sandwiched between two indium tin oxide layers. The Fano resonance wavelength varies with the applied voltage and the microcavity resonance. A large shift of 48 nm in the Fano resonance wavelength is achieved when the applied voltage is 20 V. This may provide a new way for the study of multi-functional integrated photonic circuits and chips based on plasmonic microstructures

Composite modulation of Fano resonance in plasmonic microstructures by electric-field and microcavity

Energy Technology Data Exchange (ETDEWEB)

Zhang, Fan; Wu, Chenyun; Yang, Hong [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Hu, Xiaoyong, E-mail: xiaoyonghu@pku.edu.cn; Gong, Qihuang [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China)

2014-11-03

Composite modulation of Fano resonance by using electric-field and microcavity simultaneously is realized in a plasmonic microstructure, which consists of a gold nanowire grating inserted into a Fabry-Perot microcavity composited of a liquid crystal layer sandwiched between two indium tin oxide layers. The Fano resonance wavelength varies with the applied voltage and the microcavity resonance. A large shift of 48 nm in the Fano resonance wavelength is achieved when the applied voltage is 20 V. This may provide a new way for the study of multi-functional integrated photonic circuits and chips based on plasmonic microstructures.

On the Origin of Surface Traps in Colloidal II–VI Semiconductor Nanocrystals

NARCIS (Netherlands)

Houtepen, Arjan J.; Hens, Zeger; Owen, Jonathan S.; Infante, Ivan

2017-01-01

One of the greatest challenges in the field of semiconductor nanomaterials is to make trap-free nanocrystalline structures to attain a remarkable improvement of their optoelectronic performances. In semiconductor nanomaterials, a very high number of atoms is located on the surface and these atoms

A Initio Theoretical Studies of Surfaces of Semiconductors

Science.gov (United States)

Wang, Jing

1993-01-01

The first semiconductor which we study with these techniques is the archetypal elemental semiconductor, silicon. We present the first extensive study of point defects on Si(100). We identify the principal defects and two primary mechanisms responsible for their dominance: the need to eliminate dangling bonds on the surface and the need to compensate the strain induced by topological effects. Furthermore, we present evidence that the presence of point defects on the Si(100) surface is not intrinsic to the ground state of the surface as a stress relieving mechanism but rather is due merely to thermal fluctuations. We address materials issues associated with the identification of the lowest energy surfaces of GaAs and the determination of the geometric structure of a GaAs crystallite growing freely in three dimensions. The fracture energies associated with (110), (100) and (111) interface planes are calculated and a Wulff construction indicates that an ideal stoichiometric GaAs crystal should be terminated with (110) surfaces. We investigate the more complex issues that arise on surfaces when aspects of these two semiconductors are mixed. We investigate the problem of growing GaAs on the Si(100) surface and demonstrate how and why the most fundamental properties of the resulting bulk GaAs material, such as its crystalline orientation, may depend sensitively on the interplay between growth conditions such as temperature and the properties of the Si surface. For stepped Si(100) -As, we show that the growth of As directly on top of the Si surface produces a metastable state, while the replacement of the original top Si layer leads to a lower energy configuration, with the rearrangement of the surface driven by the relaxation of stress by surface steps. Finally, we study delta -doping, where one attempts to grow a single layer of Si on a GaAs surface before continuing with the growth of bulk GaAs. We shall employ a slightly different modality of the ab initio approach. We

Vertical-cavity surface-emitting lasers for medical diagnosis

DEFF Research Database (Denmark)

Ansbæk, Thor

This thesis deals with the design and fabrication of tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs). The focus has been the application of tunable VCSELs in medical diagnostics, specifically OCT. VCSELs are candidates as light sources for swept-source OCT where their high sweep rate, wide...

Optimisation of spontaneous four-wave mixing in a ring microcavity

Science.gov (United States)

Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N.

2017-11-01

A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the dispersion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numerical calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: completely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable. Presented at the Russian - British Symposium on Quantum Technologies (Moscow, 20 - 23 March 2017)

Black phosphorus-based one-dimensional photonic crystals and microcavities.

Science.gov (United States)

Kriegel, Ilka; Toffanin, Stefano; Scotognella, Francesco

2016-11-10

The latest achievements in the fabrication of thin layers of black phosphorus (BP), toward the technological breakthrough of a phosphorene atomically thin layer, are paving the way for their use in electronics, optics, and optoelectronics. In this work, we have simulated the optical properties of one-dimensional photonic structures, i.e., photonic crystals and microcavities, in which few-layer BP is one of the components. The insertion of the 5-nm black phosphorous layers leads to a photonic band gap in the photonic crystals and a cavity mode in the microcavity that is interesting for light manipulation and emission enhancement.

Toward continuous-wave operation of organic semiconductor lasers

Science.gov (United States)

Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-01-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

CCST [Center for Compound Semiconductor Technology] research briefs

International Nuclear Information System (INIS)

Zipperian, T.E.; Voelker, E.R.

1989-12-01

This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

Research on the Band Gap Characteristics of Two-Dimensional Phononic Crystals Microcavity with Local Resonant Structure

Directory of Open Access Journals (Sweden)

Mao Liu

2015-01-01

Full Text Available A new two-dimensional locally resonant phononic crystal with microcavity structure is proposed. The acoustic wave band gap characteristics of this new structure are studied using finite element method. At the same time, the corresponding displacement eigenmodes of the band edges of the lowest band gap and the transmission spectrum are calculated. The results proved that phononic crystals with microcavity structure exhibited complete band gaps in low-frequency range. The eigenfrequency of the lower edge of the first gap is lower than no microcavity structure. However, for no microcavity structure type of quadrilateral phononic crystal plate, the second band gap disappeared and the frequency range of the first band gap is relatively narrow. The main reason for appearing low-frequency band gaps is that the proposed phononic crystal introduced the local resonant microcavity structure. This study provides a good support for engineering application such as low-frequency vibration attenuation and noise control.

A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

International Nuclear Information System (INIS)

Pailharey, Eric

2000-01-01

The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

Science.gov (United States)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

Effects of ion sputtering on semiconductor surfaces

International Nuclear Information System (INIS)

McGuire, G.E.

1978-01-01

Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

Organic semiconductor crystals.

Science.gov (United States)

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Light emitting diodes as a plant lighting source

Energy Technology Data Exchange (ETDEWEB)

Bula, R.J.; Tennessen, D.J.; Morrow, R.C. [Wisconsin Center for Space Automation and Robotics, Madison, WI (United States); Tibbitts, T.W. [Univ. of Wisconsin, Madison, WI (United States)

1994-12-31

Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used in a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.

Reactivity of group IV (100) semiconductor surfaces towards organic compounds

Science.gov (United States)

Wang, George T.

The reactions of simple and multifunctional organic compounds with the clean silicon, germanium, and diamond (100)-2 x 1 semiconductor surfaces have been investigated using a combination of multiple internal reflection infrared spectroscopy and quantum chemistry density functional theory calculations. From these studies, an improved understanding of the atomic level reactivity of these semiconductor surfaces has been obtained, along with insights into how to achieve their selective coupling with organics of desired and varied functionality. In addition to the Si(100) and Ge(100) surfaces, our results show that cycloaddition chemistry can also be extended to the diamond (100) surface. At room temperature, 1,3-butadiene was found to form a Diels-Alder product with the diamond (100) surface, as evidenced by isotopic substitution experiments and comparison of the surface adduct with its direct molecular analogue, cyclohexene. The reactions of other classes of molecules in addition to alkenes on the Si(100) and Ge(100) surfaces, including a series of five-membered cyclic amines, were also examined. For tertiary aliphatic amines on Si(100) and both secondary and tertiary aliphatic amines on Ge(100), a majority of the molecules were observed to become stably trapped in dative-bonded precursor states rather than form energetically favorable dissociation products. For pyrrole, aromaticity was found to play a defining role in its reactivity, and a comparison of its molecular and surface reactivity reveals interesting similarities. To probe the factors controlling the selectivity of organic reactions on clean semiconductor surfaces, the adsorption of acetone and a series of unsaturated ketones was also investigated. The reaction of acetone on Ge(100) was found to be under thermodynamic control at room temperature, resulting in the formation of an "ene" product rather than the kinetically favored [2+2] C=O cycloaddition product previously observed on the Si(100) surface. In

Self-Cleaning Microcavity Array for Photovoltaic Modules.

Science.gov (United States)

Vüllers, Felix; Fritz, Benjamin; Roslizar, Aiman; Striegel, Andreas; Guttmann, Markus; Richards, Bryce S; Hölscher, Hendrik; Gomard, Guillaume; Klampaftis, Efthymios; Kavalenka, Maryna N

2018-01-24

Development of self-cleaning coatings is of great interest for the photovoltaic (PV) industry, as soiling of the modules can significantly reduce their electrical output and increase operational costs. We fabricated flexible polymeric films with novel disordered microcavity array (MCA) topography from fluorinated ethylene propylene (FEP) by hot embossing. Because of their superhydrophobicity with water contact angles above 150° and roll-off angles below 5°, the films possess self-cleaning properties over a wide range of tilt angles, starting at 10°, and contaminant sizes (30-900 μm). Droplets that impact the FEP MCA surface with velocities of the same order of magnitude as that of rain bounce off the surface without impairing its wetting properties. Additionally, the disordered MCA topography of the films enhances the performance of PV devices by improving light incoupling. Optical coupling of the FEP MCA films to a glass-encapsulated multicrystalline silicon solar cell results in 4.6% enhancement of the electrical output compared to that of an uncoated device.

Multimode laser emission from free-standing cylindrical microcavities

Energy Technology Data Exchange (ETDEWEB)

Peter, Jaison, E-mail: jaisonpeter@cusat.ac.in; Radhakrishnan, P.; Nampoori, V.P.N.; Kailasnath, M.

2014-05-01

We report a well resolved whispering gallery mode (WGM) laser emission from a free-standing microring cavity based on a dye doped hollow polymer optical fiber (DDHPOF), which is transversely pumped by a pulsed Nd:YAG laser. The microring laser is characterized by a well-defined, low threshold pump power at which the emission spectral intensity dramatically increases and collapses into several dominant microcavity laser modes with reduced mode spacing and high Q-value. Resonant modes are excited inside the gain medium which is strongly confined along the radial direction so that the spacing of lasing modes is controlled by the diameter of the cylindrical microcavity. A variation in the free spectral range of WGM spectra from 0.23 to 0.09 nm coupled with a red-shift is observed with an increase in the diameter of DDHPOFs. - Highlights: • Different diameter free-standing cylindrical microcavity lasers have been fabricated and their performances have been evaluated. • The microring laser is characterized by a well-defined, low threshold pump power, with reduced mode spacing and high Q-value. • When the diameter of DDHPOF increases, the number of lasing peaks increases along with the decrease of the FSR as observed from our studies. • It is also found that whispering gallery lasing envelope is shifted from 559 to 571 nm (Stokes shift) with the diameter.

Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

Science.gov (United States)

Ahn, Doyeol; Park, Seoung-Hwan

2016-01-01

In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding energy, and high-density misfit dislocations due to lattice-mismatched substrates. Cuprous halides I-VII semiconductors, on the other hand, have negligible built-in field, large exciton binding energies and close lattice matched to silicon substrates. Recent experimental studies have shown that the luminescence of I-VII CuCl grown on Si is three orders larger than that of GaN at room temperature. Here we report yet unexplored potential of cuprous halides systems by investigating the optical gain of CuCl/CuI quantum wells. It is found that the optical gain and the luminescence are much larger than that of group III-nitrides due to large exciton binding energy and vanishing electrostatic fields. We expect that these findings will open up the way toward highly efficient cuprous halides based LEDs compatible to Si technology. PMID:26880097

Numerical modeling of exciton-polariton Bose-Einstein condensate in a microcavity

Science.gov (United States)

Voronych, Oksana; Buraczewski, Adam; Matuszewski, Michał; Stobińska, Magdalena

2017-06-01

A novel, optimized numerical method of modeling of an exciton-polariton superfluid in a semiconductor microcavity was proposed. Exciton-polaritons are spin-carrying quasiparticles formed from photons strongly coupled to excitons. They possess unique properties, interesting from the point of view of fundamental research as well as numerous potential applications. However, their numerical modeling is challenging due to the structure of nonlinear differential equations describing their evolution. In this paper, we propose to solve the equations with a modified Runge-Kutta method of 4th order, further optimized for efficient computations. The algorithms were implemented in form of C++ programs fitted for parallel environments and utilizing vector instructions. The programs form the EPCGP suite which has been used for theoretical investigation of exciton-polaritons. Catalogue identifier: AFBQ_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AFBQ_v1_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: BSD-3 No. of lines in distributed program, including test data, etc.: 2157 No. of bytes in distributed program, including test data, etc.: 498994 Distribution format: tar.gz Programming language: C++ with OpenMP extensions (main numerical program), Python (helper scripts). Computer: Modern PC (tested on AMD and Intel processors), HP BL2x220. Operating system: Unix/Linux and Windows. Has the code been vectorized or parallelized?: Yes (OpenMP) RAM: 200 MB for single run Classification: 7, 7.7. Nature of problem: An exciton-polariton superfluid is a novel, interesting physical system allowing investigation of high temperature Bose-Einstein condensation of exciton-polaritons-quasiparticles carrying spin. They have brought a lot of attention due to their unique properties and potential applications in polariton-based optoelectronic integrated circuits. This is an out-of-equilibrium quantum system confined

III-V semiconductors for photoelectrochemical applications: surface preparation and characterization

Energy Technology Data Exchange (ETDEWEB)

Fertig, Dominic; Schaechner, Birgit; Calvet, Wofram; Kaiser, Bernhard; Jaegermann, Wolfram [TU Darmstadt, Fachbereich Materialwissenschaft, Fachgebiet Oberflaechenforschung (Germany)

2011-07-01

III-V semiconductors are promising reference systems for photoelectrochemical energy conversion. Therefore we have studied the influence of different acids and acidic solutions on the etching of p-doped gallium-arsenide and gallium-phosphide single crystal surfaces. From our experiments we conclude, that etching with HCl and subsequent annealing up to 450 C gives the best results for the removal of the carbonates and the oxides without affecting the quality of the sample. By treating the surfaces with ''piranha''-solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O/7:2:1), the creation of an oxide layer with well defined thickness can be achieved. For the creation of an efficient photoelectrochemical cell, Pt nanoparticles have been deposited from solution. These surfaces are then characterized by photoelectron spectroscopy and AFM. Further electrochemical measurements try to correlate the effect of the surface cleaning and the Pt deposition on the photoactivity of the GaAs- and GaP-semiconductors.

Surface phonon polaritons in semi-infinite semiconductor superlattices

International Nuclear Information System (INIS)

Nkoma, J.S.

1986-07-01

Surface phonon polaritons in a semi-infinite semiconductor superlattice bounded by vacuum are studied. The modes associated with the polaritons are obtained and used to obtain the dispersion relation. Numerical results show that polariton bands exist between the TO and LO phonon frequencies, and are found to approach two surface mode frequencies in the limit of large tangential wave vector. Dependency of frequencies on the ratio of layer thicknesses is shown. Results are illustrated by a GaAs-GaP superlattice bounded by vacuum. (author)

Cavity QED with a single QD inside an optical microcavity

International Nuclear Information System (INIS)

Peter, E.; Bloch, J.; Lemaitre, A.; Hours, J.; Patriarche, G.; Cavanna, A.; Laurent, S.; Robert-Philip, I.; Senellart, P.; Martrou, D.; Gerard, J.M.

2006-01-01

To demonstrate strong coupling regime for a single quantum dot inside an optical microcavity, large oscillator strength quantum dots are needed. We show that quantum dots formed by the interface fluctuations of a thin GaAs quantum well are ideal systems for this purpose since they can present an oscillator strength larger than 100. By inserting a GaAs QD inside a state of the art microdisk microcavity, we demonstrate the strong coupling regime with a Rabi splitting of 400 μeV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

OpenAIRE

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incand...

The role of group index engineering in series-connected photonic crystal microcavities for high density sensor microarrays

International Nuclear Information System (INIS)

Zou, Yi; Zhu, Liang; Chen, Ray T.; Chakravarty, Swapnajit

2014-01-01

We experimentally demonstrate an efficient and robust method for series connection of photonic crystal microcavities that are coupled to photonic crystal waveguides in the slow light transmission regime. We demonstrate that group index taper engineering provides excellent optical impedance matching between the input and output strip waveguides and the photonic crystal waveguide, a nearly flat transmission over the entire guided mode spectrum and clear multi-resonance peaks corresponding to individual microcavities that are connected in series. Series connected photonic crystal microcavities are further multiplexed in parallel using cascaded multimode interference power splitters to generate a high density silicon nanophotonic microarray comprising 64 photonic crystal microcavity sensors, all of which are interrogated simultaneously at the same instant of time

The role of group index engineering in series-connected photonic crystal microcavities for high density sensor microarrays

Energy Technology Data Exchange (ETDEWEB)

Zou, Yi, E-mail: yzou@utexas.edu; Zhu, Liang; Chen, Ray T., E-mail: raychen@uts.cc.utexas.edu [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Chakravarty, Swapnajit, E-mail: swapnajit.chakravarty@omegaoptics.com [Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States)

2014-04-07

We experimentally demonstrate an efficient and robust method for series connection of photonic crystal microcavities that are coupled to photonic crystal waveguides in the slow light transmission regime. We demonstrate that group index taper engineering provides excellent optical impedance matching between the input and output strip waveguides and the photonic crystal waveguide, a nearly flat transmission over the entire guided mode spectrum and clear multi-resonance peaks corresponding to individual microcavities that are connected in series. Series connected photonic crystal microcavities are further multiplexed in parallel using cascaded multimode interference power splitters to generate a high density silicon nanophotonic microarray comprising 64 photonic crystal microcavity sensors, all of which are interrogated simultaneously at the same instant of time.

AC low-pressure plasmas generated by using annular-shaped electrodes for abatement of pollutants emitted during semiconductor manufacturing processes

International Nuclear Information System (INIS)

Hur, Min; Lee, Jae Ok; Song, Young Hoon

2011-01-01

A plasma abatement system operating at low pressures is set up with the aim of treating pollutants emitted by the semiconductor industry. The abatement device is characterized by using a tube-shaped reactor design and a bipolar alternating current, which allows an easy connection to pre-existing pipelines in the semiconductor industry and low installation cost, respectively. By using optical emission spectroscopy (OES) and Fourier transform infrared spectroscopy (FTIR), we analyzed the discharge characteristics and abatement efficiency with emphasis on the working pressure effect. In the case of CF 4 , the destruction and removal efficiency (DRE) is greatly reduced with increasing pressure. However, the pressure has a relatively small influence on the DRE for tetrakis(ethylmethylamino)zirconium (TEMAZ), which is significantly destroyed only with several hundred watts and without any liquefied byproducts. This difference is closely related to the spatial distribution of reactive species and to the chemical bond strengths of the pollutant's components. Finally, the applicability of the abatement device is discussed based on the experimental results.

Filamentation of a surface plasma wave over a semiconductor-free space interface

Science.gov (United States)

Kumar, Gagan; Tripathi, V. K.

2007-12-01

A large amplitude surface plasma wave (SPW), propagating over a semiconductor-free space interface, is susceptible to filamentation instability. A small perturbation in the amplitude of the SPW across the direction of propagation exerts a ponderomotive force on free electrons and holes, causing spatial modulation in free carrier density and hence the effective permittivity ɛeff of the semiconductor. The regions with higher ɛeff attract more power from the nieghborhood, leading to the growth of the perturbation. The growth rate increases with the intensity of the surface wave. It decreases with the frequency of the SPW.

Manipulating the optical properties of CdSe/ZnSSe quantum dot based monolithic pillar microcavities

Energy Technology Data Exchange (ETDEWEB)

Seyfried, Moritz; Kalden, Joachim; Lohmeyer, Henning; Sebald, Kathrin; Gutowski, Juergen [Semiconductor Optics, Institute of Solid state Physics, University of Bremen (Germany); Kruse, Carsten; Hommel, Detlef, E-mail: Seyfried@ifp.uni-bremen.d [Semiconductor Epitaxy, Institute of Solid state Physics, University of Bremen (Germany)

2010-02-01

A customization of the optical properties of pillar microcavities on the desired applications is essential for their future use as quantum-optical devices. Therefore, all-epitaxial cavities with CdSe quantum dot embedded in pillar structures with different geometries have been realized by focused-ion-beam etching. The quality factors of circularly shaped pillar microcavities have been measured and their dependence on the excitation power is discussed. As a possibility to achieve polarized light emission, asymmetrically shaped microcavities are presented. Examples of an elliptically shaped pillar as well as of photonic molecules are investigated with respect to their photoluminescence characteristics and polarization.

Proposal for efficient mode converter based on cavity quantum electrodynamics dark mode in a semiconductor quantum dot coupled to a bimodal microcavity

Energy Technology Data Exchange (ETDEWEB)

Li, Jiahua [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Fundamental Physical Quantities Measurement of Ministry of Education, Wuhan 430074 (China); Yu, Rong, E-mail: yurong321@126.com [School of Science, Hubei Province Key Laboratory of Intelligent Robot, Wuhan Institute of Technology, Wuhan 430073 (China); Ma, Jinyong; Wu, Ying, E-mail: yingwu2@163.com [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2014-10-28

The ability to engineer and convert photons between different modes in a solid-state approach has extensive technological implications not only for classical communication systems but also for future quantum networks. In this paper, we put forward a scheme for coherent mode conversion of optical photons by utilizing the intermediate coupling between a single quantum dot and a bimodal photonic crystal microcavity via a waveguide. Here, one mode of the photonic crystal microcavity is coherently driven by an external single-frequency continuous-wave laser field and the two cavity modes are not coupled to each other due to their orthogonal polarizations. The undriven cavity mode is thus not directly coupled to the input driving laser and the only way it can get light is via the quantum dot. The influences of the system parameters on the photon-conversion efficiency are analyzed in detail in the limit of weak probe field and it is found that high photon-conversion efficiency can be achieved under appropriate conditions. It is shown that the cavity dark mode, which is a superposition of the two optical modes and is decoupled from the quantum dot, can appear in such a hybrid optical system. We discuss the properties of the dark mode and indicate that the formation of the dark mode enables the efficient transfer of optical fields between the two cavity modes.

Recent Advances in Conjugated Polymers for Light Emitting Devices

Science.gov (United States)

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

NARCIS (Netherlands)

2010-01-01

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

Surface plasmon polariton amplification in semiconductor-graphene-dielectric structure

Energy Technology Data Exchange (ETDEWEB)

Dadoenkova, Yuliya S. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Novgorod State University, Veliky Novgorod (Russian Federation); Donetsk Institute for Physics and Technology, Donetsk (Ukraine); Moiseev, Sergey G. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Ulyanovsk (Russian Federation); Abramov, Aleksei S. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Kadochkin, Aleksei S.; Zolotovskii, Igor O. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Institute of Nanotechnologies of Microelectronics of the Russian Academy of Sciences, 32A Leninskiy Prosp., 119991, Moscow (Russian Federation); Fotiadi, Andrei A. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Universite de Mons (Belgium)

2017-05-15

A mechanism of amplification of surface plasmon polaritons due to the transfer of electromagnetic energy from a drift current wave into a far-infrared surface wave propagating along a semiconductor-dielectric boundary in waveguide geometry is proposed. A necessary condition of the interaction of these waves is phase matching condition, i. e., when the phase velocity of the surface wave approaches the drift velocity of charge carriers. It is shown that in the spectral region of the surface plasmon polariton slowing-down its amplification coefficient can reach values substantially exceeding the ohmic loss coefficient of the surface wave in the structure. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.

Science.gov (United States)

Jeong, Seonghoon; Oh, Seung Kyu; Ryou, Jae-Hyun; Ahn, Kwang-Soon; Song, Keun Man; Kim, Hyunsoo

2018-01-31

Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level without the wavelength conversion through packaged phosphors or chip integration for photon recycling are of particular importance to produce compact, cost-competitive, and smart lighting sources. In this study, monolithic white LEDs were developed based on ZnO/GaN semiconductor heterojunctions. The electroluminescence (EL) wavelength of the ZnO/GaN heterojunction could be tuned by a post-thermal annealing process, causing the generation of an interfacial Ga 2 O 3 layer. Ultraviolet, violet-bluish, and greenish-yellow broad bands were observed from n-ZnO/p-GaN without an interfacial layer, whereas a strong greenish-yellow band emission was the only one observed from that with an interfacial layer. By controlled integration of ZnO/GaN heterojunctions with different postannealing conditions, monolithic white LED was demonstrated with color coordinates in the range (0.3534, 0.3710)-(0.4197, 0.4080) and color temperatures of 4778-3349 K in the Commission Internationale de l'Eclairage 1931 chromaticity diagram. Furthermore, the monolithic white LED produced approximately 2.1 times higher optical output power than a conventional ZnO/GaN heterojunction due to the carrier confinement effect at the Ga 2 O 3 /n-ZnO interface.

Basic and applied research at NTT and postgraduate education

International Nuclear Information System (INIS)

Kimura, Tatsuya

1995-01-01

Several current research topics, which are studied at NTT Basic Research Laboratories, are reviewed in the fields of semiconductor physics, quantum optics and biophysics. These topics include the surface structure transition of GaAs, InAs and Si, electron transport in low-dimensional structure, microcavity quantum-wire semiconductor lasers, quantum nondemolition measurement of fibre solitons, and artificial network development of cultivated neural cells. 32 refs., 33 fig

Thiophene-Based Organic Semiconductors.

Science.gov (United States)

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

International Nuclear Information System (INIS)

Jana, Dipankar; Porwal, S.; Sharma, T. K.; Oak, S. M.; Kumar, Shailendra

2014-01-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates

Layer-by-layer assembly of multicolored semiconductor quantum dots towards efficient blue, green, red and full color optical films

International Nuclear Information System (INIS)

Zhang Jun; Li Qian; Di Xiaowei; Liu Zhiliang; Xu Gang

2008-01-01

Multicolored semiconductor quantum dots have shown great promise for construction of miniaturized light-emitting diodes with compact size, low weight and cost, and high luminescent efficiency. The unique size-dependent luminescent property of quantum dots offers the feasibility of constructing single-color or full-color output light-emitting diodes with one type of material. In this paper, we have demonstrated the facile fabrication of blue-, green-, red- and full-color-emitting semiconductor quantum dot optical films via a layer-by-layer assembly technique. The optical films were constructed by alternative deposition of different colored quantum dots with a series of oppositely charged species, in particular, the new use of cationic starch on glass substrates. Semiconductor ZnSe quantum dots exhibiting blue emission were deposited for fabrication of blue-emitting optical films, while semiconductor CdTe quantum dots with green and red emission were utilized for construction of green- and red-emitting optical films. The assembly of integrated blue, green and red semiconductor quantum dots resulted in full-color-emitting optical films. The luminescent optical films showed very bright emitting colors under UV irradiation, and displayed dense, smooth and efficient luminous features, showing brighter luminescence in comparison with their corresponding quantum dot aqueous colloid solutions. The assembled optical films provide the prospect of miniaturized light-emitting-diode applications.

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

Directory of Open Access Journals (Sweden)

Paul C. McIntyre

2012-07-01

Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

Amplification of surface acoustic waves by transverse electric current in piezoelectric semiconductors

DEFF Research Database (Denmark)

Gulyaev, Yuri V.

1974-01-01

acoustoelectric effect but also lead to amplification of surface acoustic waves by electron drift perpendicular to the surface. For Love waves in a piezoelectric semiconductor film on a highly conducting substrate, the amplification coefficient is found and the conditions necessary for amplification...

Vapor-Liquid-Solid Etch of Semiconductor Surface Channels by Running Gold Nanodroplets.

Science.gov (United States)

Nikoobakht, Babak; Herzing, Andrew; Muramoto, Shin; Tersoff, Jerry

2015-12-09

We show that Au nanoparticles spontaneously move across the (001) surface of InP, InAs, and GaP when heated in the presence of water vapor. As they move, the particles etch crystallographically aligned grooves into the surface. We show that this process is a negative analogue of the vapor-liquid-solid (VLS) growth of semiconductor nanowires: the semiconductor dissolves into the catalyst and reacts with water vapor at the catalyst surface to create volatile oxides, depleting the dissolved cations and anions and thus sustaining the dissolution process. This VLS etching process provides a new tool for directed assembly of structures with sublithographic dimensions, as small as a few nanometers in diameter. Au particles above 100 nm in size do not exhibit this process but remain stationary, with oxide accumulating around the particles.

The combination of high Q factor and chirality in twin cavities and microcavity chain

Science.gov (United States)

Song, Qinghai; Zhang, Nan; Zhai, Huilin; Liu, Shuai; Gu, Zhiyuan; Wang, Kaiyang; Sun, Shang; Chen, Zhiwei; Li, Meng; Xiao, Shumin

2014-01-01

Chirality in microcavities has recently shown its bright future in optical sensing and microsized coherent light sources. The key parameters for such applications are the high quality (Q) factor and large chirality. However, the previous reported chiral resonances are either low Q modes or require very special cavity designs. Here we demonstrate a novel, robust, and general mechanism to obtain the chirality in circular cavity. By placing a circular cavity and a spiral cavity in proximity, we show that ultra-high Q factor, large chirality, and unidirectional output can be obtained simultaneously. The highest Q factors of the non-orthogonal mode pairs are almost the same as the ones in circular cavity. And the co-propagating directions of the non-orthogonal mode pairs can be reversed by tuning the mode coupling. This new mechanism for the combination of high Q factor and large chirality is found to be very robust to cavity size, refractive index, and the shape deformation, showing very nice fabrication tolerance. And it can be further extended to microcavity chain and microcavity plane. We believe that our research will shed light on the practical applications of chirality and microcavities. PMID:25262881

Multi-state lasing in self-assembled ring-shaped green fluorescent protein microcavities

Energy Technology Data Exchange (ETDEWEB)

Dietrich, Christof P., E-mail: cpd3@st-andrews.ac.uk; Höfling, Sven; Gather, Malte C., E-mail: mcg6@st-andrews.ac.uk [SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS (United Kingdom)

2014-12-08

We demonstrate highly efficient lasing from multiple photonic states in microcavities filled with self-assembled rings of recombinant enhanced green fluorescent protein (eGFP) in its solid state form. The lasing regime is achieved at very low excitation energies of 13 nJ and occurs from cavity modes dispersed in both energy and momentum. We attribute the momentum distribution to very efficient scattering of incident light at the surface of the eGFP rings. The distribution of lasing states in energy is induced by the large spectral width of the gain spectrum of recombinant eGFP (FWHM ≅ 25 nm)

Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity

NARCIS (Netherlands)

Inaba, T.; Lee, D.-G.; Wakamatsu, R.; Kojima, T.; Mitchell, B.; Capretti, A.; Gregorkiewicz, T.; Koizumi, A.; Fujiwara, Y.

2016-01-01

We investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a

A study of the cavity polariton under strong excitation:dynamics and nonlinearities in II-VI micro-cavities

International Nuclear Information System (INIS)

Muller, Markus

2000-01-01

This work contains an experimental study of the photoluminescence dynamics of cavity polaritons in strong coupling micro-cavities based on II-VI semiconductor compounds. The small exciton size and the strong exciton binding energy in these materials allowed us to study the strong coupling regime between photon and exciton up to high excitation densities, exploring the linear and non-linear emission regimes. Our main experimental techniques are picosecond time-resolved and angular photoluminescence spectroscopy. In the linear regime and for a negative photon-exciton detuning, we observe a suppression of the polariton relaxation by the emission of acoustic phonons leading to a non-equilibrium polariton distribution on the lower branch. This 'bottleneck' effect, which has already been described for polaritons in bulk semiconductors, results from the pronounced photon like character of the polaritons near k(parallel) = 0 in this configuration. At high excitation densities, non-linear relaxation processes, namely final state stimulation of the relaxation and polariton-polariton scattering, bypass this bottleneck giving rise to a very rapid relaxation down to the bottom of the band. We show that this dramatic change in the relaxation dynamics is finally responsible of the super-linear increase of the polariton emission from these states. (author) [fr

Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

Science.gov (United States)

Tisdale, William A., III

Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots

Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

DEFF Research Database (Denmark)

Kopylov, Oleksii

This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non-radiative e......This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non...... of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time......-resolved PL and electroluminescence (EL) together with current-voltage characteristics are presented to evaluate the device performance. A clear evidence of non-radiative energy transfer was seen in the carrier dynamics of both the LED and the nanocrystals when the quantum well – nanocrystals separation...

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

Science.gov (United States)

Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

2012-03-12

The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

Simultaneous near field imaging of electric and magnetic field in photonic crystal nanocavities

NARCIS (Netherlands)

Vignolini, S.; Intonti, F.; Riboli, F.; Wiersma, D.S.; Balet, L.P.; Li, L.H.; Francardi, M.; Gerardino, A.; Fiore, A.; Gurioli, M.

2012-01-01

The insertion of a metal-coated tip on the surface of a photonic crystal microcavity is used for simultaneous near field imaging of electric and magnetic fields in photonic crystal nanocavities, via the radiative emission of embedded semiconductor quantum dots (QD). The photoluminescence intensity

Electronic Properties of Metallic Nanoclusters on Semiconductor Surfaces: Implications for Nanoelectronic Device Applications

International Nuclear Information System (INIS)

Lee, Takhee; Liu Jia; Chen, N.-P.; Andres, R.P.; Janes, D.B.; Reifenberger, R.

2000-01-01

We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both the realization of well-controlled interfaces at the nanoscale and the ability to adequately characterize their electrical properties. Imaging by scanning tunneling microscopy as well as electrical characterization by current-voltage spectroscopy enable the study of the electrical properties of nanoclusters/semiconductor systems at the nanoscale. As an example of the low-resistance interfaces that can be realized, low-resistance nanocontacts consisting of metal nanoclusters deposited on specially designed ohmic contact structures are described. To illustrate a possible path to employing metal/semiconductor nanostructures in nanoelectronic applications, we also describe the fabrication and performance of uniform 2-D arrays of such metallic clusters on semiconductor substrates. Using self-assembly techniques involving conjugated organic tether molecules, arrays of nanoclusters have been formed in both unpatterned and patterned regions on semiconductor surfaces. Imaging and electrical characterization via scanning tunneling microscopy/spectroscopy indicate that high quality local ordering has been achieved within the arrays and that the clusters are electronically coupled to the semiconductor substrate via the low-resistance metal/semiconductor interface

Micro-Cavity Fluidic Dye Laser

DEFF Research Database (Denmark)

Helbo, Bjarne; Kristensen, Anders; Menon, Aric Kumaran

2003-01-01

We have successfully designed, fabricated and characterized a micro-cavity fluidic dye laser with metallic mirrors, which can be integrated with polymer based lab-on-a-chip microsystems without further processing steps. A simple rate-equation model is used to predict the average pumping power...... threshold for lasing as function of cavity-mirror reflectance, laser dye concentration and cavity length. The laser device is characterized using the laser dye Rhodamine 6G dissolved in ethanol. Lasing is observed, and the influence of dye concentration is investigated....

Efficient analysis of mode profiles in elliptical microcavity using dynamic-thermal electron-quantum medium FDTD method.

Science.gov (United States)

Khoo, E H; Ahmed, I; Goh, R S M; Lee, K H; Hung, T G G; Li, E P

2013-03-11

The dynamic-thermal electron-quantum medium finite-difference time-domain (DTEQM-FDTD) method is used for efficient analysis of mode profile in elliptical microcavity. The resonance peak of the elliptical microcavity is studied by varying the length ratio. It is observed that at some length ratios, cavity mode is excited instead of whispering gallery mode. This depicts that mode profiles are length ratio dependent. Through the implementation of the DTEQM-FDTD on graphic processing unit (GPU), the simulation time is reduced by 300 times as compared to the CPU. This leads to an efficient optimization approach to design microcavity lasers for wide range of applications in photonic integrated circuits.

Polymer-coated vertical-cavity surface-emitting laser diode vapor sensor

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

2010-01-01

We report a new method for monitoring vapor concentration of volatile organic compounds using a vertical-cavity surface-emitting laser (VCSEL). The VCSEL is coated with a polymer thin film on the top distributed Bragg reflector (DBR). The analyte absorption is transduced to the electrical domain ...

Theory and simulation of charge transport in disordered organic semiconductors

NARCIS (Netherlands)

Bobbert, P.A.; Kondov, I.; Sutman, G.

2013-01-01

Charge transport in polymeric or small-molecule organic semiconductors used in organic light-emitting diodes (OLEDs) occurs by hopping of charges between sites at which the charges are localized. The energetic disorder in these semiconductors has a profound influence on the charge transport: charges

Where science fiction meets reality? With oxide semiconductors.

Energy Technology Data Exchange (ETDEWEB)

Fortunato, E.; Martins, R. [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, CEMOP-UNINOVA, 2829-516 Caparica (Portugal)

2011-09-15

Transparent electronics is today one of the most advanced topics for a wide range of device applications, where the key components are wide band gap semiconductors, where oxides of different origin play an important role, not only as passive components but also as active components similar to what we observe in conventional semiconductors. As passive components they include the use of these materials as dielectrics for a wide range of electronic devices and also as transparent electrical conductors for use in several optoelectronic applications, such as liquid crystal displays, organic light emitting diodes, solar cells, optical sensors etc. As active materials, they exploit the use of truly electronic semiconductors where the main emphasis is being put on transparent thin film transistors, light emitting diodes, lasers, ultraviolet sensors and integrated circuits among others. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Insulated InP (100) semiconductor by nano nucleus generation in pure water

Science.gov (United States)

Ghorab, Farzaneh; Es'haghi, Zarrin

2018-01-01

Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

Surface passivation technology for III-V semiconductor nanoelectronics

International Nuclear Information System (INIS)

Hasegawa, Hideki; Akazawa, Masamichi

2008-01-01

The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Self-organised wires and antiwires on semiconductor surfaces

International Nuclear Information System (INIS)

Srivastava, G.P.; Miwa, R.H.

2004-01-01

We present an overview of self-organised formation of lines of (semi)metal elements on semiconductor surfaces, together with an ab initio theoretical modelling of such quasi-one-dimensional systems. Results of calculations are presented for the atomic geometry, electronic states, and dispersion of the most tightly bound image state (IS) for a self-organised thin indium chain on the silicon surface forming the Si(1 1 1)-In(4 x 1) nanowire system. It is pointed out that strong anisotropic behaviour of the image state observed in inverse photoemission measurements originates from the anisotropy in the surface corrugation potential. Results are also presented for theoretically simulated STM images of self-organised Bi-lines on the Si(0 0 1) surface, which suggest a low density of states close to the valence band maximum localized on the Bi-lines, supporting a proposed model of a quantum antiwire system

Surface plasmon enhanced organic light emitting diodes by gold nanoparticles with different sizes

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-11-30

Highlights: • Different varieties, sizes, and shapes for nanoparticles will generate different surface plasmon resonance effects in the devices. • The red-shift phenomenon for absorption peaks is because of an increasing contribution of higher-order plasmon modes for the larger gold nanoparticles. • The mobility of electrons in the electron-transport layer of organic light-emitting diodes is a few orders of magnitude lower than that of holes in the hole-transport layer of organic light-emitting diodes. - Abstract: The influence of gold nanoparticles (GNPs) with different sizes doped into (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) (PEDOT:PSS) on the performance of organic light-emitting diodes is investigated in this study. The current efficiency of the device, at a current density of 145 mA/cm, with PEDOT:PSS doped with GNPs of 8 nm is about 1.57 times higher than that of the device with prime PEDOT:PSS because the absorption peak of GNPs is closest to the photoluminescence peak of the emission layer, resulting in maximum surface plasmon resonance effect in the device. In addition, the surface-enhanced Raman scattering spectroscopy also reveals the maximum surface plasmon resonance effect in the device when the mean particle size of GNPs is 8 nm.

Surface displacement imaging by interferometry with a light emitting diode

International Nuclear Information System (INIS)

Dilhaire, Stefan; Grauby, Stephane; Jorez, Sebastien; Lopez, Luis David Patino; Rampnoux, Jean-Michel; Claeys, Wilfrid

2002-01-01

We present an imaging technique to measure static surface displacements of electronic components. A device is supplied by a transient current that creates a variation of temperature, thus a surface displacement. To measure the latter, a setup that is based on a Michelson interferometer is used. To avoid the phenomenon of speckle and the drawbacks inherent to it, we use a light emitting diode as the light source for the interferometer. The detector is a visible CCD camera that analyzes the optical signal containing the information of surface displacement of the device. Combining images, we extract the amplitude of the surface displacement. Out-of-plane surface-displacement images of a thermoelectric device are presented

Theory of tamm surface states on the boundary between Hgsub(1-x)Cdsub(x)Te type semimetal and narrow-gap semiconductor

International Nuclear Information System (INIS)

Mekhtiyev, M.A.; Kalina, V.A.

1980-01-01

The conditions of appearance of tamm surface states and their energy spectrum on the boundary of semimetals and narrow-gap semiconductors are considered. By the Green function method the equation for surface state energy is obtained. The solution of the latter is analyzed in particular cases when energy of heavy hole zones of the semimetal and semiconductor is the same and when the heavy hole gap of the semiconductor is shifted down relatively to the semimetal of the same name gap as well as accurate computer calculation. It is shown that neither in parabolic limits, nor in cases of a strongly unparabolic semiconductor (semimetal) and a parabolic semimetal (semiconductor) the equation obtained has no solutions at small quasipulse values i.e. there are no surface states. In the case when the heavy hole zone of a semiconductor is shifted down for the value of the order of narrow-gap semiconductor the effective mass of surface states turns to be twice heavier than that of the semimetal volumetrical electrons [ru

Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

Directory of Open Access Journals (Sweden)

Zakharov ND

2007-01-01

Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

Quantum Logic Using Excitonic Quantum Dots in External Optical Microcavities

National Research Council Canada - National Science Library

Raymer, Michael

2003-01-01

An experimental project was undertaken to develop means to achieve quantum optical strong coupling between a single GaAs quantum dot and the optical mode of a microcavity for the purpose of quantum...

Testing of defects in Si semiconductor apparatus by using single-photon detection

International Nuclear Information System (INIS)

Zhongliang, Pan; Ling, Chen; Guangju, Chen

2013-01-01

The failure analysis of semiconductor apparatus is very needed for ensuring product quality, which can find several types of defects in the semiconductor apparatus. A new testing method for the defects in Si semiconductor apparatus is presented in this paper, the method makes use of photon emissions to find out the failure positions or failure components by taking advantage of the infrared photo emission characteristics of semiconductor apparatus. These emitted photons carry the information of the apparatus structure. If there are defects in the apparatus, these photons can help in understanding the apparatus properties and detecting the defects. An algorithm for the generation of circuit input vectors are presented in this paper to enhance the strength of the emitted photons for the given components in the semiconductor apparatus. The multiple-valued logic, the static timing analysis and path sensitizations, are used in the algorithm. A lot of experimental results for the Si semiconductor apparatus show that many types of defects such as contact spiking and latchup failure etc., can be detected accurately by the method proposed in this paper

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

International Nuclear Information System (INIS)

Yan, Hai; Zou, Yi; Yang, Chun-Ju; Chakravarty, Swapnajit; Wang, Zheng; Tang, Naimei; Chen, Ray T.; Fan, Donglei

2015-01-01

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

Energy Technology Data Exchange (ETDEWEB)

Yan, Hai, E-mail: hai.yan@utexas.edu; Zou, Yi; Yang, Chun-Ju [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Chakravarty, Swapnajit, E-mail: swapnajit.chakravarty@omegaoptics.com [Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Wang, Zheng [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Tang, Naimei; Chen, Ray T., E-mail: raychen@uts.cc.utexas.edu [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Fan, Donglei [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

2015-03-23

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.

Ultrasensitive detection of cell lysing in an microfabricated semiconductor laser cavity

Energy Technology Data Exchange (ETDEWEB)

Gourley, P.L.; French, T.; McDonald, A.E.; Shields, E.A. [Sandia National Labs., Albuquerque, NM (United States); Gourley, M.F. [Washington Hospital Center, Washington, DC (United States)

1998-01-01

In this paper the authors report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, they are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. The authors find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.

Glial cell adhesion and protein adsorption on SAM coated semiconductor and glass surfaces of a microfluidic structure

Science.gov (United States)

Sasaki, Darryl Y.; Cox, Jimmy D.; Follstaedt, Susan C.; Curry, Mark S.; Skirboll, Steven K.; Gourley, Paul L.

2001-05-01

The development of microsystems that merge biological materials with microfabricated structures is highly dependent on the successful interfacial interactions between these innately incompatible materials. Surface passivation of semiconductor and glass surfaces with thin organic films can attenuate the adhesion of proteins and cells that lead to biofilm formation and biofouling of fluidic structures. We have examined the adhesion of glial cells and serum albumin proteins to microfabricated glass and semiconductor surfaces coated with self-assembled monolayers of octadecyltrimethoxysilane and N-(triethoxysilylpropyl)-O- polyethylene oxide urethane, to evaluate the biocompatibility and surface passivation those coatings provide.

Femtosecond coherent emission from GaAs bulk microcavities

Science.gov (United States)

Gurioli, Massimo; Bogani, Franco; Ceccherini, Simone; Colocci, Marcello; Beltram, Fabio; Sorba, Lucia

1999-02-01

The emission from a λ/2 GaAs bulk microcavity resonantly excited by femtosecond pulses has been characterized by using an interferometric correlation technique. It is found that the emission is dominated by the coherent signal due to light elastically scattered by disorder, and that scattering is predominantly originated from the lower polariton branch.

Sub-monolayer dot vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

2006-01-01

Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

Resonant cavity light-emitting diodes based on dielectric passive cavity structures

Science.gov (United States)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

2017-02-01

A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5�

Hybrid organic-inorganic porous semiconductor transducer for multi-parameters sensing.

Science.gov (United States)

Caliò, Alessandro; Cassinese, Antonio; Casalino, Maurizio; Rea, Ilaria; Barra, Mario; Chiarella, Fabio; De Stefano, Luca

2015-07-06

Porous silicon (PSi) non-symmetric multi-layers are modified by organic molecular beam deposition of an organic semiconductor, namely the N,N'-1H,1H-perfluorobutyldicyanoperylene-carboxydi-imide (PDIF-CN2). Joule evaporation of PDIF-CN2 into the PSi sponge-like matrix not only improves but also adds transducing skills, making this solid-state device a dual signal sensor for chemical monitoring. PDIF-CN2 modified PSi optical microcavities show an increase of about five orders of magnitude in electric current with respect to the same bare device. This feature can be used to sense volatile substances. PDIF-CN2 also improves chemical resistance of PSi against alkaline and acid corrosion. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

International Nuclear Information System (INIS)

Zhang, Xingyu; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chakravarty, Swapnajit; Chen, Ray T.

2015-01-01

We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB

Density matrix of strongly coupled quantum dot - microcavity system

International Nuclear Information System (INIS)

Nguyen Van Hop

2009-01-01

Any two-level quantum system can be used as a quantum bit (qubit) - the basic element of all devices and systems for quantum information and quantum computation. Recently it was proposed to study the strongly coupled system consisting of a two-level quantum dot and a monoenergetic photon gas in a microcavity-the strongly coupled quantum dot-microcavity (QD-MC) system for short, with the Jaynes-Cumming total Hamiltonian, for the application in the quantum information processing. Different approximations were applied in the theoretical study of this system. In this work, on the basis of the exact solution of the Schrodinger equation for this system without dissipation we derive the exact formulae for its density matrix. The realization of a qubit in this system is discussed. The solution of the system of rate equation for the strongly coupled QD-MC system in the presence of the interaction with the environment was also established in the first order approximation with respect to this interaction.

Depletion field focusing in semiconductors

NARCIS (Netherlands)

Prins, M.W.J.; Gelder, Van A.P.

1996-01-01

We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

On the problem of propagation of magnetoplasma surface waves in semiconductors

International Nuclear Information System (INIS)

Davydov, A.B.; Zakharov, V.A.

1975-01-01

A calculation is made of the spectrum of surface waves traveling along a boundary separating a dielectric from a magnetized semiconductor plasma parallel or at right angles to a magnetic field B. Dispersion relationships are obtained for the k is parallel to B case and these relationships explain the origin of the investigated surface waves on the boundary of a two-component (electron-hole) plasma in InSb. An analysis is made of the dispersion of the surface waves in the k is perpendicular to B case, which leads to a nonreciprocal propagation. (author)

Theoretical modelling of semiconductor surfaces microscopic studies of electrons and photons

CERN Document Server

Srivastava, G P

1999-01-01

The state-of-the-art theoretical studies of ground state properties, electronic states and atomic vibrations for bulk semiconductors and their surfaces by the application of the pseudopotential method are discussed. Studies of bulk and surface phonon modes have been extended by the application of the phenomenological bond charge model. The coverage of the material, especially of the rapidly growing and technologically important topics of surface reconstruction and chemisorption, is up-to-date and beyond what is currently available in book form. Although theoretical in nature, the book provides

Real-time and online screening method for materials emitting volatile organic compounds

Energy Technology Data Exchange (ETDEWEB)

Kim, Changhyuk [University of Minnesota, Department of Mechanical Engineering (United States); Sul, Yong Tae [Hoseo University (Korea, Republic of); Pui, David Y. H., E-mail: dyhpui@umn.edu [University of Minnesota, Department of Mechanical Engineering (United States)

2016-09-15

In the semiconductor industry, volatile organic compounds (VOCs) in the cleanroom air work as airborne molecular contamination, which reduce the production yield of semiconductor chips by forming nanoparticles and haze on silicon wafers and photomasks under ultraviolet irradiation during photolithography processes. Even though VOCs in outdoor air are removed by gas filters, VOCs can be emitted from many kinds of materials used in cleanrooms, such as organic solvents and construction materials (e.g., adhesives, flame retardants and sealants), threatening the production of semiconductors. Therefore, finding new replacements that emit lower VOCs is now essential in the semiconductor industry. In this study, we developed a real-time and online method to screen materials for developing the replacements by converting VOCs into nanoparticles under soft X-ray irradiation. This screening method was applied to measure VOCs emitted from different kinds of organic solvents and adhesives. Our results showed good repeatability and high sensitivity for VOCs, which come from aromatic compounds, some alcohols and all tested adhesives (Super glue and cleanroom-use adhesives). In addition, the overall trend of measured VOCs from cleanroom-use adhesives was well matched with those measured by a commercial thermal desorption–gas chromatography–mass spectrometry, which is a widely used off-line method for analyzing VOCs. Based on the results, this screening method can help accelerate the developing process for reducing VOCs in cleanrooms.

Extended Macroscopic Study of Dilute Gas Flow within a Microcavity

Directory of Open Access Journals (Sweden)

Mohamed Hssikou

2016-01-01

Full Text Available The behaviour of monatomic and dilute gas is studied in the slip and early transition regimes using the extended macroscopic theory. The gas is confined within a two-dimensional microcavity where the longitudinal sides are in the opposite motion with constant velocity ±Uw. The microcavity walls are kept at the uniform and reference temperature T0. Thus, the gas flow is transported only by the shear stress induced by the motion of upper and lower walls. From the macroscopic point of view, the regularized 13-moment equations of Grad, R13, are solved numerically. The macroscopic gas proprieties are studied for different values of the so-called Knudsen number (Kn, which gives the gas-rarefaction degree. The results are compared with those obtained using the classical continuum theory of Navier-Stokes and Fourier (NSF.

Solid spectroscopy: semiconductors

International Nuclear Information System (INIS)

Silva, C.E.T.G. da

1983-01-01

Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

Organic semiconductors in sensor applications

CERN Document Server

Malliaras, George; Owens, Róisín

2008-01-01

Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

Some specific features of a surface-screw plasma instability in semiconductors

International Nuclear Information System (INIS)

Karavaev, G.F.; Tsipivka, Yu.I.

1976-01-01

A numerical analysis of the dispersion relation has been carried out, which enables to discover some new peculiarities in the behaviour of the surface helical instability (SHI) of a semiconductor plasma. To simplify the dispersion relation a semiconductor with nearly equal electron and hole mobilities has been considered. The dependences of threshold characteristics of SHI on a magnetic field H for different angular harmonics are represented graphically. A comparison of the formulas obtained shows that the approximation of truncated series yields an incorrect qualitative dependence of the wavelength on H, whereas asymptotic formulas in the range of strong magnetic fields yield not only a correct qualitative dependence of the threshold characteristics on H, but also a good quantitative agreement

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

NARCIS (Netherlands)

2008-01-01

The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

Optical responses in single-crystalline organic microcavities

International Nuclear Information System (INIS)

Kondo, H.; Yamamoto, Y.; Takeda, A.; Yamamoto, S.; Kurisu, H.

2008-01-01

The anisotropic response of cavity polaritons is investigated in an organic microcavity composed of a single-crystalline anthracene film sandwiched between two distributed Bragg reflectors. Upper and lower cavity polariton modes are observed as sharp spectral peaks in the transmission spectra. Dispersion relation for cavity polaritons is obtained as a function of thickness of the thin film. Using this relation, the vacuum Rabi splitting energy for this system is estimated to be 340 meV

Optical responses in single-crystalline organic microcavities

Energy Technology Data Exchange (ETDEWEB)

Kondo, H. [Department of Physics, Ehime University, Matsuyama, 2-5 Bunkyo-cho, Matsuyama 790-8577 (Japan)], E-mail: kondo@phys.sci.ehime-u.ac.jp; Yamamoto, Y.; Takeda, A. [Department of Physics, Ehime University, Matsuyama, 2-5 Bunkyo-cho, Matsuyama 790-8577 (Japan); Yamamoto, S.; Kurisu, H. [Department of Advanced Materials Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611 (Japan)

2008-05-15

The anisotropic response of cavity polaritons is investigated in an organic microcavity composed of a single-crystalline anthracene film sandwiched between two distributed Bragg reflectors. Upper and lower cavity polariton modes are observed as sharp spectral peaks in the transmission spectra. Dispersion relation for cavity polaritons is obtained as a function of thickness of the thin film. Using this relation, the vacuum Rabi splitting energy for this system is estimated to be 340 meV.

High figure of merit ultra-compact 3-channel parallel-connected photonic crystal mini-hexagonal-H1 defect microcavity sensor array

Science.gov (United States)

Wang, Chunhong; Sun, Fujun; Fu, Zhongyuan; Ding, Zhaoxiang; Wang, Chao; Zhou, Jian; Wang, Jiawen; Tian, Huiping

2017-08-01

In this paper, a photonic crystal (PhC) butt-coupled mini-hexagonal-H1 defect (MHHD) microcavity sensor is proposed. The MHHD microcavity is designed by introducing six mini-holes into the initial H1 defect region. Further, based on a well-designed 1 ×3 PhC Beam Splitter and three optimal MHHD microcavity sensors with different lattice constants (a), a 3-channel parallel-connected PhC sensor array on monolithic silicon on insulator (SOI) is proposed. Finite-difference time-domain (FDTD) simulations method is performed to demonstrate the high performance of our structures. As statistics show, the quality factor (Q) of our optimal MHHD microcavity attains higher than 7×104, while the sensitivity (S) reaches up to 233 nm/RIU(RIU = refractive index unit). Thus, the figure of merit (FOM) >104 of the sensor is obtained, which is enhanced by two orders of magnitude compared to the previous butt-coupled sensors [1-4]. As for the 3-channel parallel-connected PhC MHHD microcavity sensor array, the FOMs of three independent MHHD microcavity sensors are 8071, 8250 and 8250, respectively. In addition, the total footprint of the proposed 3-channel parallel-connected PhC sensor array is ultra-compactness of 12.5 μm ×31 μm (width × length). Therefore, the proposed high FOM sensor array is an ideal platform for realizing ultra-compact highly parallel refractive index (RI) sensing.

KMC Simulation of Surface Growth of Semiconductors

International Nuclear Information System (INIS)

Esen, M.

2004-01-01

In this work we have studied the growth and equilibration of semiconductor surfaces consisting of monoatomic steps separated by flat terraces using kinetic Monte Carlo method. Atomistic processes such as diffusion on terraces, attachment/detachment particles to/from step edges, attachment of particles from an upper terrace to a bounding step, diffusion of particles along step edges are considered. A rate equation for each, these processes is written and the overall transition probabilities are calculated where processes are ordered to make the distinction between slow and fast processes Iractal The interaction of steps is also included in the calculation of rate equations. The growth of such a surface is simulated when there is a particle flux to the surface. The rough of the surface and its dependence on both temperature and kinetic parameters such edge diffusion barrier are investigated. The formation of islands on terraces is prohibited and the distribution of their number and sizes are investigated as a function of temperature and appropriate kinetic parameters. In the absence of a flux to the surface, the equilibration of the surface is investigated paying particular attention to the top of the profile when the initial surface is a periodic profile where parallel monoatomic steps separated by terraces. It is observed that during equilibration of the profile, the topmost step disintegrates quickly and leads to many islands on the top of the profile due to. collision and annihilation of step edges of opposite sign. The islands then quickly disintegrate due to the line tension effect and this scenario repeats itself until the surface completely flattens

Surface properties and photocatalytic activity of KTaO3, CdS, MoS2 semiconductors and their binary and ternary semiconductor composites.

Science.gov (United States)

Bajorowicz, Beata; Cybula, Anna; Winiarski, Michał J; Klimczuk, Tomasz; Zaleska, Adriana

2014-09-24

Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD), UV-Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), Brunauer-Emmett-Teller (BET) specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

Surface Properties and Photocatalytic Activity of KTaO3, CdS, MoS2 Semiconductors and Their Binary and Ternary Semiconductor Composites

Directory of Open Access Journals (Sweden)

Beata Bajorowicz

2014-09-01

Full Text Available Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD, UV-Vis diffuse reflectance spectroscopy (DRS, scanning electron microscopy (SEM, Brunauer–Emmett–Teller (BET specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

Science.gov (United States)

Zhong, Z Y; Jiang, Y D

2006-10-15

In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

Enhancing the Robustness of the Microcavity Coupling System

International Nuclear Information System (INIS)

Yan Ying-Zhan; Zhang Wen-Dong; Xiong Ji-Jun; Ji Zhe; Yan Shu-Bin; Liu Jun; Xue Chen-Yang

2011-01-01

A novel method to enhance the robustness of the microcavity coupling system (MCS) is presented by encapsulating and solidifying the MCS with a low refractive index (RI) curable UV polymer. The encapsulating process is illustrated in detail for a typical microsphere with a radius of R about 240μm. Three differences of the resonant characteristics before and after the package are observed and analyzed. The first two differences refer to the enhancement of the coupling strength and the shift of the resonant spectrum to the longer wavelength, which are both mainly because of the microsphere surrounding RI variation. Another difference is the quality factor (Q-factor) which decreases from 7.8×10 7 to 8.7×10 6 after the package due to the polymer absorption. Moreover, rotation testing experiments have been carried out to verify the robustness of the package MCS. Experimental results demonstrate that the packaged MCR has much better robust performance than the un-package sample. The enhancement of the robustness greatly promotes the microcavity research from fundamental investigations to application fields. (fundamental areas of phenomenology(including applications))

Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO

Science.gov (United States)

Jamadi, O.; Réveret, F.; Mallet, E.; Disseix, P.; Médard, F.; Mihailovic, M.; Solnyshkov, D.; Malpuech, G.; Leymarie, J.; Lafosse, X.; Bouchoule, S.; Li, F.; Leroux, M.; Semond, F.; Zuniga-Perez, J.

2016-03-01

The polariton condensation phase diagram is compared in GaN and ZnO microcavities grown on mesa-patterned silicon substrate. Owing to a common platform, these microcavities share similar photonic properties with large quality factors and low photonic disorder, which makes it possible to determine the optimal spot diameter and to realize a thorough phase diagram study. Both systems have been investigated under the same experimental conditions. The experimental results and the subsequent analysis reveal clearly that longitudinal optical phonons have no influence in the thermodynamic region of the condensation phase diagram, while they allow a strong (slight) decrease of the polariton lasing threshold in the trade-off zone (kinetic region). Phase diagrams are compared with numerical simulations using Boltzmann equations, and are in satisfactory agreement. A lower polariton lasing threshold has been measured at low temperature in the ZnO microcavity, as is expected due to a larger Rabi splitting. This study highlights polariton relaxation mechanisms and their importance in polariton lasing.

Method of manufacturing a semiconductor sensor device and semiconductor sensor device

NARCIS (Netherlands)

2009-01-01

The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

High quality factor GaAs microcavity with buried bullseye defects

DEFF Research Database (Denmark)

Winkler, K.; Gregersen, Niels; Hayrynen, T.

2018-01-01

The development of high quality factor solid-state microcavities with low mode volumes has paved the way towards on-chip cavity quantum electrodynamics experiments and the development of high-performance nanophotonic devices. Here, we report on the implementation of a new kind of solid...

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

International Nuclear Information System (INIS)

Wen Feng; Liu Deming; Huang Lirong

2010-01-01

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Wen Feng; Liu Deming; Huang Lirong, E-mail: hlr5649@163.co [Wuhan National Laboratory for Optoelectronics, College of Opto-Electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2010-10-15

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Phosphorescent Organic Light Emitting Diodes Implementing Platinum Complexes

Science.gov (United States)

Ecton, Jeremy Exton

microcavity organic light emitting diode (MOLED), significant enhancement in the external quantum efficiency was achieved. The optimized MOLED structure achieved a light out-coupling enhancement of 1.35 compared to the non-cavity structure with a peak EQE of 34.2%. In addition to demonstrating a high light out-coupling enhancement, the microcavity effect of a narrow band emitter in a MOLED was elucidated.

Few-mode vertical-cavity surface-emitting laser: Optional emission of transverse modes with different polarizations

Science.gov (United States)

Zhong, Chuyu; Zhang, Xing; Hofmann, Werner; Yu, Lijuan; Liu, Jianguo; Ning, Yongqiang; Wang, Lijun

2018-05-01

Few-mode vertical-cavity surface-emitting lasers that can be controlled to emit certain modes and polarization states simply by changing the biased contacts are proposed and fabricated. By directly etching trenches in the p-doped distributed Bragg reflector, the upper mesa is separated into several submesas above the oxide layer. Individual contacts are then deposited. Each contact is used to control certain transverse modes with different polarization directions emitted from the corresponding submesa. These new devices can be seen as a prototype of compact laser sources in mode division multiplexing communications systems.

Terahertz plasmonics with semiconductor surfaces and antennas

NARCIS (Netherlands)

Gómez Rivas, J.; Berrier, A.

2009-01-01

Semiconductors have a Drude-like behavior at terahertz (THz) frequencies similar to metals at optical frequencies. Narrow band gap semiconductors have a dielectric constant with a negative real component and a relatively small imaginary component. This permittivity is characteristic of noble metals

Thiazole-based organic semiconductors for organic electronics.

Science.gov (United States)

Lin, Yuze; Fan, Haijun; Li, Yongfang; Zhan, Xiaowei

2012-06-19

Over the past two decades, organic semiconductors have been the subject of intensive academic and commercial interests. Thiazole is a common electron-accepting heterocycle due to electron-withdrawing nitrogen of imine (C=N), several moieties based on thiazole have been widely introduced into organic semiconductors, and yielded high performance in organic electronic devices. This article reviews recent developments in the area of thiazole-based organic semiconductors, particularly thiazole, bithiazole, thiazolothiazole and benzobisthiazole-based small molecules and polymers, for applications in organic field-effect transistors, solar cells and light-emitting diodes. The remaining problems and challenges, and the key research direction in near future are discussed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tunneling microscopy of 2H-MoS2: A compound semiconductor surface

OpenAIRE

Weimer, M.; Kramar, J.; Bai, C.; Baldeschwieler, J. D.

1988-01-01

Molybdenum disulfide, a layered semiconductor, is an interesting material to study with the tunneling microscope because two structurally and electronically different atomic species may be probed at its surface. We report on a vacuum scanning tunneling microscopy study of 2H-MoS2. Atomic resolution topographs and current images show the symmetry of the surface unit cell and clearly reveal two distinct atomic sites in agreement with the well-known x-ray crystal structure.

High-energy terahertz wave parametric oscillator with a surface-emitted ring-cavity configuration.

Science.gov (United States)

Yang, Zhen; Wang, Yuye; Xu, Degang; Xu, Wentao; Duan, Pan; Yan, Chao; Tang, Longhuang; Yao, Jianquan

2016-05-15

A surface-emitted ring-cavity terahertz (THz) wave parametric oscillator has been demonstrated for high-energy THz output and fast frequency tuning in a wide frequency range. Through the special optical design with a galvano-optical scanner and four-mirror ring-cavity structure, the maximum THz wave output energy of 12.9 μJ/pulse is achieved at 1.359 THz under the pump energy of 172.8 mJ. The fast THz frequency tuning in the range of 0.7-2.8 THz can be accessed with the step response of 600 μs. Moreover, the maximum THz wave output energy from this configuration is 3.29 times as large as that obtained from the conventional surface-emitted THz wave parametric oscillator with the same experimental conditions.

Dye Giant Absorption and Light Confinement Effects in Porous Bragg Microcavities

DEFF Research Database (Denmark)

Oliva-Ramírez, Manuel; Gil-Rostra, Jorge; Simonsen, Adam C.

2018-01-01

This work presents a simple experimental procedure to probe light confinement effects in photonic structures. Two types of porous 1D Bragg microcavities with two resonant peaks in the reflection gap were prepared by physical vapor deposition at oblique angle configurations and then infiltrated...... with dye solutions of increasing concentrations. The unusual position shift and intensity drop of the transmitted resonant peak observed when it was scanned through the dye absorption band have been accounted for by the effect of the light trapped at their optical defect layer. An experimentally observed...... giant absorption of the dye molecules and a strong anomalous dispersion in the refractive index of the solution are claimed as the reasons for the observed variations in the Bragg microcavity resonant feature. Determining the giant absorption of infiltrated dye solutions is proposed as a general...

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

Energy Technology Data Exchange (ETDEWEB)

Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P. [Belarusian State University of Information and RadioElectronics (Belarus)

2016-03-15

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

International Nuclear Information System (INIS)

Chubenko, E. B.; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P.

2016-01-01

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

Room temperature strong coupling effects from single ZnO nanowire microcavity

KAUST Repository

Das, Ayan; Heo, Junseok; Bayraktaroglu, Adrian; Guo, Wei; Ng, Tien Khee; Phillips, Jamie; Ooi, Boon S.; Bhattacharya, Pallab

2012-01-01

Strong coupling effects in a dielectric microcavity with a single ZnO nanowire embedded in it have been investigated at room temperature. A large Rabi splitting of ?100 meV is obtained from the polariton dispersion and a non

Magnetic excitations in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

2009-01-01

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

Electrodes for Semiconductor Gas Sensors

Science.gov (United States)

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

Progress of pyrene-based organic semiconductor in organic field effect transistors

Institute of Scientific and Technical Information of China (English)

Yanbin; Gong; Xuejun; Zhan; Qianqian; Li; Zhen; Li

2016-01-01

Thanks to the pure blue emitting, high planarity, electron rich and ease of chemical modification, pyrene has been thoroughly investigated for applications in organic electronics such as organic light emitting diodes(OLEDs), organic field effect transistors(OFETs), and organic solar cells(OSCs). Especially, great progresses have been made of pyrene-based organic semiconductors for OFETs in past decades. Due to the difference of molecular structure, pyrene-based organic semiconductors are divided into three categories, pyrene as terminal group, pyrene as center core and fused pyrene derivatives. This minireview gives a brief introduction of the structure-property relationship and application in OFETs about most of pyrene-based semiconducting materials since 2006,illustrating that pyrene is a good building block to construct semiconductors with superior transport property for OFETs. Finally, we provide a summary concerning the methodology to improve the transport property of the pyrene-based semiconducting materials as well as an outlook.

VCSELs Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers

CERN Document Server

2013-01-01

The huge progress which has been achieved in the field is covered here, in the first comprehensive monograph on vertical-cavity surface-emitting lasers (VCSELs) since eight years. Apart from chapters reviewing the research field and the laser fundamentals, there are comprehensive updates on red and blue emitting VCSELs, telecommunication VCSELs, optical transceivers, and parallel-optical links for computer interconnects. Entirely new contributions are made to the fields of vectorial three-dimensional optical modeling, single-mode VCSELs, polarization control, polarization dynamics, very-high-speed design, high-power emission, use of high-contrast gratings, GaInNAsSb long-wavelength VCSELs, optical video links, VCSELs for optical mice and sensing, as well as VCSEL-based laser printing. The book appeals to researchers, optical engineers and graduate students.

Spectral-Modulation Characteristics of Vertical-Cavity Surface-Emitting Lasers

Science.gov (United States)

Vas'kovskaya, M. I.; Vasil'ev, V. V.; Zibrov, S. A.; Yakovlev, V. P.; Velichanskii, V. L.

2018-01-01

The requirements imposed on vertical-cavity surface-emitting lasers in a number of metrological problems in which optical pumping of alkali atoms is used are considered. For lasers produced by different manufacturers, these requirements are compared with the experimentally observed spectral characteristics at a constant pump current and in the microwave modulation mode. It is shown that a comparatively small number of lasers in the microwave modulation mode make it possible to obtain the spectrum required for atomic clocks based on the coherent population-trapping effect.

ZnSe Light Emitting Diode Quantum Efficiency and Emission Characterization

Directory of Open Access Journals (Sweden)

Sahbudin U.K.

2016-01-01

Full Text Available ZnSe has demonstrated as a potential candidate in realizing advance LED in some appications for current and future works that utilize a cheaper preparation technique. Blue and white LEDs have been shown to spread across compound semiconductors. This II-VI compound semiconductor with a direct and wide band gap is used in the study which focused on a preparation and its characterization. The device is developed using a circular chip of ZnSe but only part of the active region is designed to allow shorter computation time. Analyses of the proposed LED are performed in an environment that allows optical transition and nonradiative recombination mechanisms. Voltage variation from 0 V to 1.5 V is maintained throughout the observation. The curent-voltage plot shows the p-n junction or diode behavior with central emissive layer. The two dimensions surface emission rate obtained indicates that voltage increment causes the emission concentration to become higher near the central pcontact. The LED efficiency is assessed in terms of internal quantum efficiency and emitting rate.

Vertical-cavity surface-emitting laser vapor sensor using swelling polymer reflection modulation

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgård; Dohn, Søren

2012-01-01

Vapor detection using a low-refractive index polymer for reflection modulation of the top mirror in a vertical-cavity surface-emitting laser (VCSEL) is demonstrated. The VCSEL sensor concept presents a simple method to detect the response of a sensor polymer in the presence of volatile organic...

A versatile tunable microcavity for investigation of light-matter interaction

Science.gov (United States)

Mochalov, Konstantin E.; Vaskan, Ivan S.; Dovzhenko, Dmitriy S.; Rakovich, Yury P.; Nabiev, Igor

2018-05-01

Light-matter interaction between a molecular ensemble and a confined electromagnetic field is a promising area of research, as it allows light-control of the properties of coupled matter. The common way to achieve coupling is to place an ensemble of molecules or quantum emitters into a cavity. In this approach, light-matter coupling is evidenced by modification of the spectral response of the emitter, which depends on the strength of interaction between emitter and cavity modes. However, there is not yet a user-friendly approach that allows the study of a large number of different and replaceable samples in a wide optical range using the same resonator. Here, we present the design of such a device that can speed up and facilitate investigation of light-matter interaction ranging from weak to strong coupling regimes in ultraviolet-visible and infrared (IR) spectral regions. The device is based on a tunable unstable λ/2 Fabry-Pérot microcavity consisting of plane and convex mirrors that satisfy the plane-parallelism condition at least at one point of the curved mirror and minimize the mode volume. Fine tuning of the microcavity length is provided by a Z-piezopositioner in a range up to 10 μm with a step of several nm. This design makes a device a versatile instrument that ensures easy finding of optimal conditions for light-matter interaction for almost any sample in both visible and IR areas, enabling observation of both electronic and vibrational couplings with microcavity modes thus paving the way to investigation of various coupling effects including Raman scattering enhancement, modification of chemical reactivity rate, lasing, and long-distance nonradiative energy transfer.

Performance of injection-limited polymer light-emitting diodes

NARCIS (Netherlands)

Blom, P.W.M.; Woudenberg, T.V.; Huiberts, H.; Jabbour, GE; Carter, SA; Kido, J; Lee, ST; Sariciftci, NS

2002-01-01

The electro-optical characteristics of a polymer light emitting diode (PLED) with a strongly reduced hole injection have been investigated. The device consists of a poly-p-phenylene vinylene semiconductor with a Ag hole injecting contact, which has an injection barrier of about 1 eV. It is observed

Degradation of light emitting diodes: a proposed methodology

International Nuclear Information System (INIS)

Koh, Sau; Vam Driel, Willem; Zhang, G.Q.

2011-01-01

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)

GaN light-emitting device based on ionic liquid electrolyte

Science.gov (United States)

Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi

2018-06-01

Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.

Local Intensity Enhancements in Spherical Microcavities: Implications for Photonic Chemical and Biological Sensors

Science.gov (United States)

Fuller, Kirk A.

2005-01-01

In this report, we summarize recent findings regarding the use spherical microcavities in the amplification of light that is inelastically scattered by either fluorescent or Raman-active molecules. This discussion will focus on Raman scattering, with the understanding that analogous processes apply to fluorescence. Raman spectra can be generated through the use of a very strong light source that stimulates inelastic light scattering by molecules, with the scattering occurring at wavelengths shifted from that of the source and being most prominent at shifts associated with the molecules natural vibrational frequencies. The Raman signal can be greatly enhanced by exposing a molecule to the intense electric fields that arise near surfaces (typically of gold or silver) exhibiting nanoscale roughness. This is known as surface-enhanced Raman scattering (SERS). SERS typically produces gain factors of 103 - 106, but under special conditions, factors of 1010 - 1014 have been achieved.

Electrostatic mechanism of shaping the wave micro-relief on the surface of a semiconductor, sputtered by an ion beam

International Nuclear Information System (INIS)

Grigor'ev, A.I.

2000-01-01

The effect of the electric field formed due to the surface charging, is not accounted for in the weakly-developed theoretical models for the ordered micro-relief formation on the surface of a semiconductor under the impact of an ion beam. It is shown, that the problem on modeling the physical mechanism of forming the ordered wave micro-relief on the semiconductor surface under the impact of a high-energy ion beam may be interpreted as an electrostatic one [ru

Fundamentals of semiconductor devices

CERN Document Server

Lindmayer, Joseph

1965-01-01

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

Top-Emitting White Organic Light-Emitting Diodes Based on Cu as Both Anode and Cathode

International Nuclear Information System (INIS)

Mu Ye; Zhang Zhen-Song; Wang Hong-Bo; Qu Da-Long; Wu Yu-Kun; Yan Ping-Rui; Li Chuan-Nan; Zhao Yi

2015-01-01

It is still challenging to obtain broadband emission covering visible light spectrum as much as possible with negligible angular dependence. In this work, we demonstrate a low driving voltage top-emitting white organic light-emitting diode (TEWOLED) based on complementary blue and yellow phosphor emitters with negligible angular dependence. The bottom copper anode with medium reflectance, which is compatible with the standard complementary metal oxide semiconductor (CMOS) technology below 0.13 μm, and the semitransparent multilayer Cs2CO3/Al/Cu cathode as a top electrode, are introduced to realize high-performance TEWOLED. Our TEWOLED achieves high efficiencies of 15.4 cd/A and 12.1 lm/W at a practical brightness of 1000 cd/m 2 at low voltage of 4 V. (paper)

Architectures for Improved Organic Semiconductor Devices

Science.gov (United States)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

Key techniques for space-based solar pumped semiconductor lasers

Science.gov (United States)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

System tests of radiation hard optical links for the ATLAS semiconductor tracker

International Nuclear Information System (INIS)

Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

2000-01-01

A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

The nonlinear carrier transport in a bipolar semiconductor sample

International Nuclear Information System (INIS)

Konin, A

2008-01-01

A theory of formation of the voltage across a bipolar semiconductor sample due to the current flow accounting for the energy band bending near the semiconductor surfaces is presented. The non-equilibrium space charge layers near the sample surfaces and the boundary conditions in the real metal-semiconductor junction have been taken into account. It is shown that the voltage-current relation of a thin sample at weak injection differs essentially from the classical Ohm's law and becomes nonlinear for certain semiconductor surface parameters. Complex voltage-current relations and the photo-induced electromotive force measurements allow determining the surface recombination rate in the real metal-semiconductor junction and the semiconductor surface potential

Strong coupling and polariton lasing in Te based microcavities embedding (Cd,Zn)Te quantum wells

Energy Technology Data Exchange (ETDEWEB)

Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Piętka, B.; Król, M.; Mirek, R.; Lekenta, K.; Szczytko, J.; Borysiuk, J.; Suffczyński, J.; Kazimierczuk, T.; Goryca, M.; Smoleński, T.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland)

2015-11-16

We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already for the structure containing a single quantum well. Embedding four unstrained quantum wells results in further enhancement of the exciton-photon coupling and the polariton lasing in the strong coupling regime.

A charge inverter for III-nitride light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Geng, Chong; Xu, Shu [Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401 (China); Demir, Hilmi Volkan, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey); Sun, Xiao Wei, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronic Engineering, College of Engineering, South University of Science and Technology, 1088 Xue-Yuan Road, Nanshan, Shenzhen, Guangdong 518055 (China)

2016-03-28

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO{sub 2} insulator layer on the p{sup +}-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p{sup +}-GaN and SiO{sub 2} insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO{sub 2} layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p{sup +}-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm{sup 2} LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.

A charge inverter for III-nitride light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Zhang, Yonghui; Bi, Wengang; Geng, Chong; Xu, Shu; Demir, Hilmi Volkan; Sun, Xiao Wei

2016-01-01

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO 2 insulator layer on the p + -GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p + -GaN and SiO 2 insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO 2 layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p + -GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm 2 LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.

Double surface plasmon enhanced organic light-emitting diodes by gold nanoparticles and silver nanoclusters

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-12-30

Graphical abstract: - Highlights: • The buffer layer is inserted between PEDOT: PSS and the emitting layer in order to avoid that the nonradiative decay process of exciton is generated. • The silver nanoclusters will generate surface plasmon resonance effect, resulting that the localized electric field around the silver nanoclusters is enhanced. • When the recombination region of the excitons is too close to the nanoparticles of the hole-transport layer, the nonradiative quenching of excitons is generated. - Abstract: The influence of gold nanoparticles (GNPs) and silver nanoclusters (SNCs) on the performance of organic light-emitting diodes is investigated in this study. The GNPs are doped into (poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate)) (PEDOT: PSS) and the SNCs are introduced between the electron-injection layer and cathode alumina. The power efficiency of the device, at the maximum luminance, with double surface plasmon resonance and buffer layer is about 2.15 times higher than that of the device without GNPs and SNCs because the absorption peaks of GNPs and SNCs are as good as the photoluminescence peak of the emission layer, resulting in strong surface plasmon resonance effect in the device. In addition, the buffer layer is inserted between PEDOT: PSS and the emitting layer in order to avoid that the nonradiative decay process of exciton is generated.

Enhanced photoresponse of monolayer molybdenum disulfide (MoS2) based on microcavity structure

Science.gov (United States)

Lu, Yanan; Yang, Guofeng; Wang, Fuxue; Lu, Naiyan

2018-05-01

There is an increasing interest in using monolayer molybdenum disulfide (MoS2) for optoelectronic devices because of its inherent direct band gap characteristics. However, the weak absorption of monolayer MoS2 restricts its applications, novel concepts need to be developed to address the weakness. In this work, monolayer MoS2 monolithically integrates with plane microcavity structure, which is formed by the top and bottom chirped distributed Bragg reflector (DBR), is demonstrated to improve the absorption of MoS2. The optical absorption is 17-fold enhanced, reaching values over 70% at work wavelength. Moreover, the monolayer MoS2-based photodetector device with microcavity presents a significantly increased photoresponse, demonstrating its promising prospects in MoS2-based optoelectronic devices.

Designing solution-processable air-stable liquid crystalline crosslinkable semiconductors

DEFF Research Database (Denmark)

McCulloch, I.; Bailey, C.; Genevicius, K.

2006-01-01

organic light emitting diode displays, low frequency radio frequency identification tag and other low performance electronics. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes...... the development of reactive mesogen semiconductors, which form large crosslinked LC domains on polymerization within mesophases. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed...

Surface modification-a novel way of attaching cocatalysts on CdS semiconductors for photocatalytic hydrogen evolution

KAUST Repository

Yu, Weili

2014-08-22

Noble metals as cocatalysts for hydrogen evolution are widely investigated for semiconductor photocatalytic water splitting. In this paper, we present a novel way to attach not only noble metals, but also transitional metals onto CdS nanocrystals as cocatalysts for hydrogen evolution. The hydrogen evolution performances for each metal were compared and result shows that Pd attached CdS gives the highest hydrogen evolution rate of 250 μmol/h. The amounts of metal ions attached on the surface were measured by inductively coupled plasma optical emission spectrometry (ICP-OES). This work confirms that surface modification is a promising way of attaching cocatalysts onto semiconductor photocatalysts.

Surface modification-a novel way of attaching cocatalysts on CdS semiconductors for photocatalytic hydrogen evolution

KAUST Repository

Yu, Weili; Isimjan, Tayirjan; Lin, Bin; Takanabe, Kazuhiro

2014-01-01

Noble metals as cocatalysts for hydrogen evolution are widely investigated for semiconductor photocatalytic water splitting. In this paper, we present a novel way to attach not only noble metals, but also transitional metals onto CdS nanocrystals as cocatalysts for hydrogen evolution. The hydrogen evolution performances for each metal were compared and result shows that Pd attached CdS gives the highest hydrogen evolution rate of 250 μmol/h. The amounts of metal ions attached on the surface were measured by inductively coupled plasma optical emission spectrometry (ICP-OES). This work confirms that surface modification is a promising way of attaching cocatalysts onto semiconductor photocatalysts.

Transmission formalism for supercurrent flow in multiprobe superconductor-semiconductor-superconductor devices

International Nuclear Information System (INIS)

van Wees, B.J.; Lenssen, K.H.; Harmans, C.J.P.M.

1991-01-01

A theoretical study is given of supercurrent flow in a one-dimensional semiconductor channel coupled to superconductors at both ends. In addition, the channel is coupled to a semiconductor reservoir by means of a junction with variable coupling strength var-epsilon. The supercurrent I(cphi) is calculated from the phase-coherent propagation of electronlike and holelike excitations emitted by the superconductor reservoirs, together with electron and hole excitations from the semiconductor reservoir. The effect of temperature and var-epsilon on I(cphi) is studied. It is shown that a voltage applied between the semiconductor reservoir and the superconductors modifies the I(cphi) relation, even in the limit var-epsilon →0

Surface-enhanced Raman effect in hybrid metal–semiconductor nanoparticle assemblies

International Nuclear Information System (INIS)

Lughi, Vanni; Bonifacio, Alois; Barbone, Matteo; Marsich, Lucia; Sergo, Valter

2013-01-01

Hybrid metal–semiconductor nanoparticles consisting of silver nanoparticle cores (AgNPs) coated with a layer of CdSe quantum dots (QDs) have been studied by Raman spectroscopy. The hybrid nanoparticles were prepared via electrostatic interaction by mixing aqueous suspensions of QDs and AgNPs, where opposite charges on the AgNPs and QDs surfaces were induced by opportunely selected capping agents. Assemblies of such hybrid nanoparticles show an increased intensity of the Raman spectrum of up to 500 times, when compared to that of the sole QDs. This enhancement is attributed to the SERS effect (Surface-enhanced Raman scattering). Such enhancement of the Raman modes suggests several opportunities for further research, both in imaging and sensing applications.

Advances in optoplasmonic sensors – combining optical nano/microcavities and photonic crystals with plasmonic nanostructures and nanoparticles

Directory of Open Access Journals (Sweden)

Xavier Jolly

2018-01-01

Full Text Available Nanophotonic device building blocks, such as optical nano/microcavities and plasmonic nanostructures, lie at the forefront of sensing and spectrometry of trace biological and chemical substances. A new class of nanophotonic architecture has emerged by combining optically resonant dielectric nano/microcavities with plasmonically resonant metal nanostructures to enable detection at the nanoscale with extraordinary sensitivity. Initial demonstrations include single-molecule detection and even single-ion sensing. The coupled photonic-plasmonic resonator system promises a leap forward in the nanoscale analysis of physical, chemical, and biological entities. These optoplasmonic sensor structures could be the centrepiece of miniaturised analytical laboratories, on a chip, with detection capabilities that are beyond the current state of the art. In this paper, we review this burgeoning field of optoplasmonic biosensors. We first focus on the state of the art in nanoplasmonic sensor structures, high quality factor optical microcavities, and photonic crystals separately before proceeding to an outline of the most recent advances in hybrid sensor systems. We discuss the physics of this modality in brief and each of its underlying parts, then the prospects as well as challenges when integrating dielectric nano/microcavities with metal nanostructures. In Section 5, we hint to possible future applications of optoplasmonic sensing platforms which offer many degrees of freedom towards biomedical diagnostics at the level of single molecules.

Ultrafast directional beam switching in coupled vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Ning, C. Z.; Goorjian, P.

2001-01-01

We propose a strategy to performing ultrafast directional beam switching using two coupled vertical-cavity surface-emitting lasers (VCSELs). The proposed strategy is demonstrated for two VCSELs of 5.6 μm in diameter placed about 1 μm apart from the edges, showing a switching speed of 42 GHz with a maximum far-field angle span of about 10 degree. [copyright] 2001 American Institute of Physics

Coupling of a single NV center to a fiber-based microcavity

International Nuclear Information System (INIS)

Christoph Becher

2014-01-01

The read-out of the spin state of a NV center in diamond or the transfer of quantum information between its spin and a photon would profit enormously from coupling the NV center's optical transitions to a microcavity with a highly directional output. We here report on such a coupling of a single NV center in a nanodiamond to a fiber-based, tunable microcavity at room temperature. Making use of the NV center's strongly broadened emission we operate in the regime of phonon-assisted cavity seeding and realize a widely tunable, narrow-band single photon source. A master equation model well reproduces our experimental results and predicts a transition into a Purcell-enhanced emission regime at low temperatures where up to 65% of the NV emission would be channeled into the cavity mode for our given experimental parameters. Further reducing scattering losses from the nanodiamonds could enable schemes for cavity-enhanced spin measurements or creation of entangled states. (author)

Microcavity polariton linewidths in the weak-disorder regime

DEFF Research Database (Denmark)

Borri, Paola; Langbein, Wolfgang Werner; Woggon, U.

2000-01-01

Polariton linewidths have been measured in a series of high-quality microcavities with different excitonic inhomogeneous broadening in the weak-disorder regime. We show experimentally that the influence of the disorder on the polariton linewidths is canceled when the polariton energies are far in...... in the tail of the excitonic absorption. The measured linewidths are quantitatively compared with an estimation using the measured excitonic absorption spectrum of the bare quantum wells, and good agreement is found....

Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

Science.gov (United States)

Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

1994-01-01

Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

Effective slip over partially filled microcavities and its possible failure

Science.gov (United States)

Ge, Zhouyang; Holmgren, Hanna; Kronbichler, Martin; Brandt, Luca; Kreiss, Gunilla

2018-05-01

Motivated by the emerging applications of liquid-infused surfaces (LIS), we study the drag reduction and robustness of transverse flows over two-dimensional microcavities partially filled with an oily lubricant. Using separate simulations at different scales, characteristic contact line velocities at the fluid-solid intersection are first extracted from nanoscale phase field simulations and then applied to micronscale two-phase flows, thus introducing a multiscale numerical framework to model the interface displacement and deformation within the cavities. As we explore the various effects of the lubricant-to-outer-fluid viscosity ratio μ˜2/μ˜1 , the capillary number Ca, the static contact angle θs, and the filling fraction of the cavity δ , we find that the effective slip is most sensitive to the parameter δ . The effects of μ˜2/μ˜1 and θs are generally intertwined but weakened if δ 1 ), however, are immune to such failure due to their generally larger contact line velocity.

Characterization of Strong Light-Matter Coupling in Semiconductor Quantum-Dot Microcavities via Photon-Statistics Spectroscopy

Science.gov (United States)

Schneebeli, L.; Kira, M.; Koch, S. W.

2008-08-01

It is shown that spectrally resolved photon-statistics measurements of the resonance fluorescence from realistic semiconductor quantum-dot systems allow for high contrast identification of the two-photon strong-coupling states. Using a microscopic theory, the second-rung resonance of Jaynes-Cummings ladder is analyzed and optimum excitation conditions are determined. The computed photon-statistics spectrum displays gigantic, experimentally robust resonances at the energetic positions of the second-rung emission.

Green synthesis of water soluble semiconductor nanocrystals and their applications

Science.gov (United States)

Wang, Ying

II-VI semiconductor nanomaterials, e.g. CdSe and CdTe, have attracted great attention over the past decades due to their fascinating optical and electrical properties. The research presented here focuses on aqueous semiconductor nanomaterials. The work can be generally divided into three parts: synthesis, property study and application. The synthetic work is devoted to develop new methods to prepare shape- and structure-controlled II-VI semiconductor nanocrystals including nanoparticles and nanowires. CdSe and CdSe CdS semiconductor nanocrystals have been synthesized using sodium citrate as a stabilizer. Upon prolonged illumination with visible light, photoluminescence quantum yield of those quantum dots can be enhanced up to 5000%. The primary reason for luminescence enhancement is considered to be the removing of specific surface states (photocorrosion) and the smoothing of the CdSe core surface (photoannealing). CdTe nanowires are prepared through self-organization of stabilizer-depleted CdTe nanoparticles. The dipolar-dipolar attraction is believed to be the driving force of nanowire formation. The rich surface chemistry of CdTe nanowire is reflected by the formation of silica shell with different morphologies when nanowires with different capping ligands are used. Te and Se nanowires are prepared by chemical decomposition of CdTe and CdSe nanoparticles in presence of an external chemical stimulus, EDTA. These results not only provide a new example of NP→NW transformation, but also lead to a better understanding of the molecular process occurring in the stabilizer-depleted nanoparticles. The applications of those semiconductor materials are primarily based on the construction of nano-structured ultrathin films with desirable functions by using layer-by-layer technique (LBL). We demonstrate that light-induced micro-scale multicolor luminescent patterns can be obtained on photoactivable CdSe/CdS nanoparticles thin films by combining the advantages of LBL as

Efficient Light Extraction from Organic Light-Emitting Diodes Using Plasmonic Scattering Layers

Energy Technology Data Exchange (ETDEWEB)

Rothberg, Lewis

2012-11-30

Our project addressed the DOE MYPP 2020 goal to improve light extraction from organic light-emitting diodes (OLEDs) to 75% (Core task 6.3). As noted in the 2010 MYPP, “the greatest opportunity for improvement is in the extraction of light from [OLED] panels”. There are many approaches to avoiding waveguiding limitations intrinsic to the planar OLED structure including use of textured substrates, microcavity designs and incorporating scattering layers into the device structure. We have chosen to pursue scattering layers since it addresses the largest source of loss which is waveguiding in the OLED itself. Scattering layers also have the potential to be relatively robust to color, polarization and angular distributions. We note that this can be combined with textured or microlens decorated substrates to achieve additional enhancement.

Semiconductor device comprising a pn-heterojunction

NARCIS (Netherlands)

2007-01-01

An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

Quasi-one-dimensional metals on semiconductor surfaces with defects

International Nuclear Information System (INIS)

Hasegawa, Shuji

2010-01-01

Several examples are known in which massive arrays of metal atomic chains are formed on semiconductor surfaces that show quasi-one-dimensional metallic electronic structures. In this review, Au chains on Si(557) and Si(553) surfaces, and In chains on Si(111) surfaces, are introduced and discussed with regard to the physical properties determined by experimental data from scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES) and electrical conductivity measurements. They show quasi-one-dimensional Fermi surfaces and parabolic band dispersion along the chains. All of them are known from STM and ARPES to exhibit metal-insulator transitions by cooling and charge-density-wave formation due to Peierls instability of the metallic chains. The electrical conductivity, however, reveals the metal-insulator transition only on the less-defective surfaces (Si(553)-Au and Si(111)-In), but not on a more-defective surface (Si(557)-Au). The latter shows an insulating character over the whole temperature range. Compared with the electronic structure (Fermi surfaces and band dispersions), the transport property is more sensitive to the defects. With an increase in defect density, the conductivity only along the metal atomic chains was significantly reduced, showing that atomic-scale point defects decisively interrupt the electrical transport along the atomic chains and hide the intrinsic property of transport in quasi-one-dimensional systems.

Microcavity-coupled fiber Bragg grating with tunable reflection spectra and speed of light.

Science.gov (United States)

Chen, Lei; Han, Ya; Liu, Qian; Liu, Yan-Ge; Zhang, Weigang; Chou, Keng C

2018-04-15

After a fiber Bragg grating (FBG) is fabricated, the reflection spectrum of the FBG is generally not tunable without mechanical deformation or temperature adjustment. Here we present a microcavity-coupled FBG with both a tunable reflection lineshape and dispersion using electromagnetically induced transparency. The Fano interference of light in the FBG and the microcavity allows for dramatic modification of the reflection spectrum. The phase of the reflected spectrum is continuously tunable between 0 and 2π to produce various Fano lineshapes. The dispersion of the output light is adjustable from normal dispersion to abnormal dispersion, consequently providing an adjustable speed of light. Additionally, it allows the FBG to switch from a notch filter to a bandpass filter at the resonant wavelength, which is not possible in a conventional uniform FBG.

Determination of an optimized Alq3 layer thickness in organic light-emitting diodes by using microcavity effects

International Nuclear Information System (INIS)

Jung, Boo-Young; Hwangbo, Chang-Kwon

2006-01-01

In this paper, an optical model of an organic light-emitting diode (OLED) based on the optical thin film theory is derived to calculate the output intensity of a small-molecule OLED. Two types of Alq 3 -based OLEDs are designed using the optical model and deposited to compare with the designed OLEDs. The optical model shows that the radiance of the OLED can be affected by the Fabry-Perot multiple beam interference effect, the two-beam interference effect, and the spontaneous emission spectrum of the emitting material. The measured spectral characteristics for the two types of OLEDs are found to be in good agreement with the simulation. The result suggests that the proposed optical model can be used for optimizing the architecture of small-molecule OLEDs.

Surface electron structure of short-period semiconductor superlattice

International Nuclear Information System (INIS)

Bartos, I.; Czech Academy Science, Prague,; Strasser, T.; Schattke, W.

2004-01-01

Full text: Semiconductor superlattices represent man-made crystals with unique physical properties. By means of the directed layer-by-layer molecular epitaxy growth their electric properties can be tailored (band structure engineering). Longer translational periodicity in the growth direction is responsible for opening of new electron energy gaps (minigaps) with surface states and resonances localized at superlattice surfaces. Similarly as for the electron structure of the bulk, a procedure enabling to modify the surface electron structure of superlattices is desirable. Short-period superlattice (GaAs) 2 (AlAs) 2 with unreconstructed (100) surface is investigated in detail. Theoretical description in terms of full eigenfunctions of individual components has to be used. The changes of electron surface state energies governed by the termination of a periodic crystalline potential, predicted on simple models, are confirmed for this system. Large surface state shifts are found in the lowest minigap of the superlattice when this is terminated in four different topmost layer configurations. The changes should be observable in angle resolved photoelectron spectroscopy as demonstrated in calculations based on the one step model of photoemission. Surface state in the center of the two dimensional Brillouin zone moves from the bottom of the minigap (for the superlattice terminated by two bilayers of GaAs) to its top (for the superlattice terminated by two bilayers of AlAs) where it becomes a resonance. No surface state/resonance is found for a termination with one bilayer of AlAs. The surface state bands behave similarly in the corresponding gaps of the k-resolved section of the electron band structure. The molecular beam epitaxy, which enables to terminate the superlattice growth with atomic layer precision, provides a way of tuning the superlattice surface electron structure by purely geometrical means. The work was supported by the Grant Agency of the Academy of Sciences

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Laser-Machined Microcavities for Simultaneous Measurement of High-Temperature and High-Pressure

Directory of Open Access Journals (Sweden)

Zengling Ran

2014-08-01

Full Text Available Laser-machined microcavities for simultaneous measurement of high-temperature and high-pressure are demonstrated. These two cascaded microcavities are an air cavity and a composite cavity including a section of fiber and an air cavity. They are both placed into a pressure chamber inside a furnace to perform simultaneous pressure and high-temperature tests. The thermal and pressure coefficients of the short air cavity are ~0.0779 nm/°C and ~1.14 nm/MPa, respectively. The thermal and pressure coefficients of the composite cavity are ~32.3 nm/°C and ~24.4 nm/MPa, respectively. The sensor could be used to separate temperature and pressure due to their different thermal and pressure coefficients. The excellent feature of such a sensor head is that it can withstand high temperatures of up to 400 °C and achieve precise measurement of high-pressure under high temperature conditions.

Laser-machined microcavities for simultaneous measurement of high-temperature and high-pressure.

Science.gov (United States)

Ran, Zengling; Liu, Shan; Liu, Qin; Huang, Ya; Bao, Haihong; Wang, Yanjun; Luo, Shucheng; Yang, Huiqin; Rao, Yunjiang

2014-08-07

Laser-machined microcavities for simultaneous measurement of high-temperature and high-pressure are demonstrated. These two cascaded microcavities are an air cavity and a composite cavity including a section of fiber and an air cavity. They are both placed into a pressure chamber inside a furnace to perform simultaneous pressure and high-temperature tests. The thermal and pressure coefficients of the short air cavity are ~0.0779 nm/°C and ~1.14 nm/MPa, respectively. The thermal and pressure coefficients of the composite cavity are ~32.3 nm/°C and ~24.4 nm/MPa, respectively. The sensor could be used to separate temperature and pressure due to their different thermal and pressure coefficients. The excellent feature of such a sensor head is that it can withstand high temperatures of up to 400 °C and achieve precise measurement of high-pressure under high temperature conditions.

Electronic transport at semiconductor surfaces - from point-contact transistor to micro-four-point probes

DEFF Research Database (Denmark)

Hasegawa, S.; Grey, Francois

2002-01-01

show that this type of conduction is measurable using new types of experimental probes, such as the multi-tip scanning tunnelling microscope and the micro-four-point probe. The resulting electronic transport properties are intriguing, and suggest that semiconductor surfaces should be considered...

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

2012-01-01

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

Science.gov (United States)

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Preface

Science.gov (United States)

2003-10-01

Light is absorbed by promoting electrons between quantum states. Our control of this key optoelectronic interaction has improved radically in recent years as we become smarter about finding ways to affect this fundamental process. For decades, researchers concentrated on improving optical properties through changing the properties of the electronic states, by choosing appropriate atoms, molecules or solids, and by growing crystals of a perfection not found in nature. Huge developments in material science saw the introduction of many optically special materials, such as compound semiconductors and their nanostructures. Recently we have found new ways to manipulate the light-matter interaction by modifying the photonic components, for instance by enhancing the optical field with feedback in cavities. This second `knob' on the light-matter interaction manipulates the optical density of states. Besides simply enhancing the interaction by locally amplifying the electromagnetic fields, the modified optical density of states produced by photonic structuring allows emission and absorption rates to be enhanced or suppressed, now known as the Purcell effect. Atom-filled optical cavities exhibit many of these interesting phenomena. But it was not until the advent of high-quality semiconductor epitaxy that transitions with sufficient oscillator strength and a narrow-enough linewidth could be produced to uncover a third approach to modifying the light-matter interaction. A simple offshoot of the technology development of vertical-cavity semiconductor lasers, the combination of high-reflectivity semiconductor mirrors and narrow strong absorption lines of semiconductor quantum wells, opens a new regime. This `strong-coupling' regime emerges when the time it takes a photon to be emitted and pass once around the cavity to be then reabsorbed (known as the inverse `Rabi' frequency) becomes less than the time for the photon to leak out of the cavity or for the electronic transition to

Influence of impurities on the surface morphology of the TIBr crystal semiconductor

International Nuclear Information System (INIS)

Santos, Robinson A. dos; Silva, Julio B. Rodrigues da; Martins, Joao F.T.; Ferraz, Caue de M.; Costa, Fabio E. da; Mesquita, Carlos H. de; Hamada, Margarida M.; Gennari, Roseli F.

2013-01-01

The impurity effect in the surface morphology quality of TlBr crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detectors. The crystals were purified and grown by the Repeated Bridgman technique. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. A significant difference in the crystals impurity concentration was observed for almost all impurities, compared to those found in the raw material. The crystals wafer grown twice showed a surface roughness and grains which may be due to the presence of impurities on the surface, while those obtained with crystals grown three times presented a more uniform surface: even though, a smaller roughness was still observed. It was demonstrated that the impurities affect strongly the surface morphology quality of crystals. (author)

Semiconductor relay and its manufacture method. Handotai relay oyobi sono seizo hoho

Energy Technology Data Exchange (ETDEWEB)

Nakamura, M

1993-06-01

The invention relates to a semiconductor relay in which a light emitting diode and a photovoltaic element are arranged in the opposite positions and connected with a light connection and aims to present a light transmission path to transmit input signals to the light emitting diode to the side of the photovoltaic element with a negligible light loss effectively. The invention presents a semiconductor relay, in which a light emitting diode loaded on the first lead frame and the light receiving part of the photovoltaic element to drive a MOSFET element loaded on the second lead frame and acting as a switch element are connected through an insulator tube with an opaque outer wall, and the interior of the insulator tube is filled with a transparent insulating filler, so that the invention affords a light transmission path without light leakage from the interior of the opaque insulator tube and with the stability in the form and no light loss. 3 figs.

Advancing semiconductor-electrocatalyst systems: application of surface transformation films and nanosphere lithography.

Science.gov (United States)

Brinkert, Katharina; Richter, Matthias H; Akay, Ömer; Giersig, Michael; Fountaine, Katherine T; Lewerenz, Hans-Joachim

2018-05-24

Photoelectrochemical (PEC) cells offer the possibility of carbon-neutral solar fuel production through artificial photosynthesis. The pursued design involves technologically advanced III-V semiconductor absorbers coupled via an interfacial film to an electrocatalyst layer. These systems have been prepared by in situ surface transformations in electrochemical environments. High activity nanostructured electrocatalysts are required for an efficiently operating cell, optimized in their optical and electrical properties. We demonstrate that shadow nanosphere lithography (SNL) is an auspicious tool to systematically create three-dimensional electrocatalyst nanostructures on the semiconductor photoelectrode through controlling their morphology and optical properties. First results are demonstrated by means of the photoelectrochemical production of hydrogen on p-type InP photocathodes where hitherto applied photoelectrodeposition and SNL-deposited Rh electrocatalysts are compared based on their J-V and spectroscopic behavior. We show that smaller polystyrene particle masks achieve higher defect nanostructures of rhodium on the photoelectrode which leads to a higher catalytic activity and larger short circuit currents. Structural analyses including HRSEM and the analysis of the photoelectrode surface composition by using photoelectron spectroscopy support and complement the photoelectrochemical observations. The optical performance is further compared to theoretical models of the nanostructured photoelectrodes on light scattering and propagation.

Electrically Injected Polariton Lasing from a GaAs-Based Microcavity under Magnetic Field

KAUST Repository

Bhattacharya, Pallab; Das, Ayan; Jankowski, Marc; Bhowmick, Sishir; Lee, Chi-Sen; Jahangir, Shafat

2012-01-01

Suppression of relaxation bottleneck and subsequent polariton lasing is observed in a GaAs-based microcavity under the application of a magnetic field. The threshold injection current density is 0.32 A/cm2 at 7 Tesla.

Atomic and electronic structures of novel silicon surface structures

Energy Technology Data Exchange (ETDEWEB)

Terry, J.H. Jr.

1997-03-01

The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will lead to useful electronic devices by pairing these modified surfaces with traditional silicon device technology. Therefore, silicon wafers with modified electronic structure (light-emitting porous silicon), passivated surfaces (H-Si(111), Cl-Si(111), Alkyl-Si(111)), and functionalized surfaces (Alkyl-Si(111)) have been studied in order to determine the fundamental properties of surface geometry and electronic structure using synchrotron radiation-based techniques.

Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

International Nuclear Information System (INIS)

Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

2007-01-01

We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity

Influence of semiconductor surface preparation on photoelectric properties of Al-Zn{sub 3}P{sub 2} contacts

Energy Technology Data Exchange (ETDEWEB)

Mirowska, Nella [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)]. E-mail: nella.mirowska@pwr.wroc.pl; Misiewicz, Jan [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

2006-06-15

The Schottky barriers formed by Al on Zn{sub 3}P{sub 2} p-type crystals have been studied. Three types of crystals (monocrystal, large-grain crystal and polycrystal) were used for device fabrication. The samples were separated in two groups according to the type of structure and the methods of surface preparation. The samples from the first group were different in structure (monocrystal, large-grain crystal and polycrystals) but prepared in the same way. Three polycrystals with differently prepared surfaces were collected in the second group. Two samples from this group were also annealed in open air at 523 K for 24 h. Measurements of photovoltaic effect at room temperature were carried out to test the impact of surface preparation on photoelectric properties of Al-Zn{sub 3}P{sub 2} contacts. Substantial differences in shape and intensity of PV signal were observed depending on whether the surface of semiconductor was mechanically polished, chemically etched or/and heat treated. The height of potential barrier, {phi} {sub B}, and optical transitions in semiconductor were determined. The value of {phi} {sub B} changed from 0.747 to 0.767 eV for unheated samples and from 0.724 to 0.755 eV for the heated ones. The quality of semiconductor surface seems to have an essential influence on spectral characteristics of Al-Zn{sub 3}P{sub 2} junctions, especially in the case of polycrystals. It appeared that thorough preliminary mechanical polishing of crystals surface provides quite good photoelectric properties of Al-Zn{sub 3}P{sub 2} junctions.

Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures.

Science.gov (United States)

Ng, Wing H; Lu, Yao; Liu, Huiyun; Carmalt, Claire J; Parkin, Ivan P; Kenyon, Anthony J

2018-02-23

Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.

Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

National Research Council Canada - National Science Library

Steckl, Andrew

2006-01-01

Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

Methods for polarized light emission from CdSe quantum dot based monolithic pillar microcavities

Energy Technology Data Exchange (ETDEWEB)

Seyfried, Moritz; Kalden, Joachim; Sebald, Kathrin; Gutowski, Juergen; Kruse, Carsten; Hommel, Detlef [Institute of Solid State Physics, University of Bremen (Germany)

2010-07-01

A lifting of the polarization degeneracy of the fundamental cavity mode in pillar microcavities (MCs) would allow for controlling the polarization state of the emitted photons. Therefore, monolithic VCSEL structures were grown by molecular beam epitaxy containing either one CdSe/ZnSSe quantum dot layer or three quantum well layers as active material. By using focused-ion-beam etching, MC pillars with different geometries were prepared out of the planar samples. Among these are circularly shaped pillar MCs with diameters in the range from 500 nm up to 4 {mu}m and quality factors of up to 7860, elliptically shaped MCs, and so-called photonic molecules consisting of circular pillar MCs which are connected by small bars. Polarization dependent photoluminescence investigations of the fundamental cavity mode reveal a lifting of the polarization degeneracy for all three types of MCs. The energy splitting of up to 0.42 meV in the circularly shaped pillar MCs is probably caused by anisotropic strain conditions within the sample and directly dependent on the pillar diameter, whereas the larger energy splitting of up to 0.72 meV for the photonic molecules or even 4.5 meV for the elliptically shaped MC is based on their asymmetric cross sections.

A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers

KAUST Repository

Pu, Jiang

2017-04-18

The light-emitting device is the primary device for current light sources. In principle, conventional light-emitting devices need heterostructures and/or intentional carrier doping to form a p-n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light-emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light-emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p-i-n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices.

Recent advances in light outcoupling from white organic light-emitting diodes

Science.gov (United States)

Gather, Malte C.; Reineke, Sebastian

2015-01-01

Organic light-emitting diodes (OLEDs) have been successfully introduced to the smartphone display market and have geared up to become contenders for applications in general illumination where they promise to combine efficient generation of white light with excellent color quality, glare-free illumination, and highly attractive designs. Device efficiency is the key requirement for such white OLEDs, not only from a sustainability perspective, but also because at the high brightness required for general illumination, losses lead to heating and may, thus, cause rapid device degradation. The efficiency of white OLEDs increased tremendously over the past two decades, and internal charge-to-photon conversion can now be achieved at ˜100% yield. However, the extraction of photons remains rather inefficient (typically physics of outcoupling in white OLEDs and review recent progress toward making light extraction more efficient. We describe how structures that scatter, refract, or diffract light can be attached to the outside of white OLEDs (external outcoupling) or can be integrated close to the active layers of the device (internal outcoupling). Moreover, the prospects of using top-emitting metal-metal microcavity designs for white OLEDs and of tuning the average orientation of the emissive molecules within the OLED are discussed.

Seeding Dynamics of Nonlinear Polariton Emission from a Microcavity

DEFF Research Database (Denmark)

Østergaard, John Erland; Langbein, Wolfgang Werner; Jensen, Jacob Riis

2000-01-01

Summary form only given. The dynamics of polaritons in microcavity samples is presently under intense debate, in particular whether or not the so-called Boser action is possible. In this work, we investigate a λ cavity with a homogeneously broadened 25 nm GaAs quantum well at the antinode...... at a temperature of 10 K. We can thus inject well-defined polariton populations in k-space revealing how different initial and final state populations may influence the dynamics....

Electronic displays using optically pumped luminescent semiconductor nanocrystals

Science.gov (United States)

Weiss, Shimon [Pinole, CA; Schlamp, Michael C [Plainsboro, NJ; Alivisatos, A Paul [Oakland, CA

2011-09-27

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Broad-spectrum enhanced absorption of graphene-molybdenum disulfide photovoltaic cells in metal-mirror microcavity

Science.gov (United States)

Jiang-Tao, Liu; Yun-Kai, Cao; Hong, Tong; Dai-Qiang, Wang; Zhen-Hua, Wu

2018-04-01

The optical absorption of graphene-molybdenum disulfide photovoltaic cells (GM-PVc) in wedge-shaped metal-mirror microcavities (w-MMCs) combined with a spectrum-splitting structure was studied. Results showed that the combination of spectrum-splitting structure and w-MMC can enable the light absorption of GM-PVcs to reach about 65% in the broad spectrum. The influence of processing errors on the absorption of GM-PVcs in w-MMCs was 3-14 times lower than that of GM-PVcs in wedge photonic crystal microcavities. The light absorption of GM-PVcs reached 60% in the broad spectrum, even with the processing errors. The proposed structure is easy to implement and may have potentially important applications in the development of ultra-thin and high-efficiency solar cells and optoelectronic devices.

Scalable photonic quantum computing assisted by quantum-dot spin in double-sided optical microcavity.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2013-07-29

We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes.

Large area UV light source with a semiconductor cathode

International Nuclear Information System (INIS)

Salamov, B. G.; Ciftci, Y. Oe.; Colakoglu, K.

2002-01-01

The light emission (LE) in the UV and visible (blue) range generated by a planar gas discharge system (PGDS) with a semiconductor cathode (SC) are studied. New light source offer high-intensity narrow-band emission at various UV and visible wavelengths (330 - 440 nm). Spectra in N 2 is presented, as well as intensity vs pressure curves for the main peaks of the spectrum. The use of source offers several advantages: PGDS can be extremely efficient energy converters transforming and amplifying a relatively low-powered photon flux incident on the receiving surface of the SC into a flux of high-energy particles over extended areas, i.e. electron, ions, photons. Thus, extremely bright UV and visible sources can be built. LE characteristics of the space in the PGDS are complex, depending on the emitting medium and species. By using the IR light to excite the SC of the system, we have shown that the discharge light emission (DLE) of the device with the N 2 in the gap can serve as an efficient source of the UV radiation if gas pressure and electric field are sufficiently high. This is realized due to the effect of the stabilisation of the spatially homogeneous mode of the discharge in a narrow gap with a large emitting area of SC. Special features of DLE render it highly promising for the development of sources with a large area of the emitting surface, high spatial uniformity of UV radiation, and fast dynamics of these devices. This low cost, high power light sources can provide an interesting alternative to conventional UV lamps

Dielectric structures with bound modes for microcavity lasers

NARCIS (Netherlands)

Visser, P.M.; Allaart, K.; Lenstra, D.

2002-01-01

Cavity modes of dielectric microsphcres and vertical cavity surface emitting lasers, in spite of their high Q, are never exactly bound, but have a finite width due to leakage at the borders. We propose types of microstructures that sustain three-dimensionally bound modes of the radiation field when

A comparative study on surface morphology from the HgI2 semiconductors prepared by different techniques

International Nuclear Information System (INIS)

Martins, Joao F.T.; Ferraz, Caue de M.; Santos, Robinson A. dos; Mesquita, Carlos H. de; Hamada, Margarida M.

2013-01-01

The impurity effect in the surface morphology quality of HgI 2 crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detector. The crystals were purified and grown by two techniques: (1) physical vapor transport (PVT) and (2) saturated solution from dimethylsulfoxide (DMSO) complexes. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. The best quality of surface morphology was found for the crystals purified and grown by the PVT technique. Significant decrease in the impurity concentration was found, purifying the crystal by means of two successive growths by the PVT technique, while a Si contamination in the HgI 2 crystal was observed, during its growth by the DMSO method. Thus, for DMSO technique was not possible to identify the peaks of the other trace elements present as impurities in the PVT crystal, due to the high intensity of the Si peak in the DMSO crystal. It was demonstrated the impurities affect significantly the surface morphology quality from the HgI 2 crystal. Key Words: Semiconductor crystal, Radiation detector, Mercury Iodide crystal, surface morphology. (author)

Decoherence in semiconductor cavity QED systems due to phonon couplings

DEFF Research Database (Denmark)

Nielsen, Per Kær; Mørk, Jesper

2014-01-01

We investigate the effect of electron-phonon interactions on the coherence properties of single photons emitted from a semiconductor cavity QED (quantum electrodynamics) system, i.e., a quantum dot embedded in an optical cavity. The degree of indistinguishability, governing the quantum mechanical...

Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

International Nuclear Information System (INIS)

Chao, K.; Zhang, Z.; Ebert, P.; Shih, C.K.

1999-01-01

Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism. copyright 1999 The American Physical Society

Optically coupled semiconductor device

Energy Technology Data Exchange (ETDEWEB)

Kumagaya, Naoki

1988-11-18

This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

Modeling of circular-grating surface-emitting lasers

Science.gov (United States)

Shams-Zadeh-Amiri, Ali M.

Grating-coupled surface-emitting lasers became an area of growing interest due to their salient features. Emission from a broad area normal to the wafer surface, makes them very well suited in high power applications and two- dimensional laser arrays. These new possibilities have caused an interest in different geometries to fully develop their potential. Among them, circular-grating lasers have the additional advantage of producing a narrow beam with a circular cross section. This special feature makes them ideal for coupling to optical fibers. All existing theoretical models dealing with circular- grating lasers only consider first-order gratings, or second-order gratings, neglecting surface emission. In this thesis, the emphasis is to develop accurate models describing the laser performance by considering the radiation field. Toward this aim, and due to the importance of the radiation modes in surface-emitting structures, a theoretical study of these modes in multilayer planar structures has been done in a rigorous and systematic fashion. Problems like orthogonality of the radiation modes have been treated very accurately. We have considered the inner product of radiation modes using the distribution theory. Orthogonality of degenerate radiation modes is an important issue. We have examined its validity using the transfer matrix method. It has been shown that orthogonality of degenerate radiation modes in a very special case leads to the Brewster theorem. In addition, simple analytical formulas for the normalization of radiation modes have been derived. We have shown that radiation modes can be handled in a much easier way than has been thought before. A closed-form spectral dyadic Green's function formulation of multilayer planar structures has been developed. In this formulation, both rectangular and cylindrical structures can be treated within the same mathematical framework. The Hankel transform of some auxiliary functions defined on a circular aperture has

Acetone vapor sensing using a vertical cavity surface emitting laser diode coated with polystyrene

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

2009-01-01

We report theoretical and experimental on a new vapor sensor, using a single-mode vertical-cavity surface-emitting laser (VCSEL) coated with a polymer sensor coating, which can detect acetone vapor at a volume fraction of 2.5%. The sensor provides the advantage of standard packaging, small form...

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

Science.gov (United States)

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Platinum nanoparticles on gallium nitride surfaces: effect of semiconductor doping on nanoparticle reactivity.

Science.gov (United States)

Schäfer, Susanne; Wyrzgol, Sonja A; Caterino, Roberta; Jentys, Andreas; Schoell, Sebastian J; Hävecker, Michael; Knop-Gericke, Axel; Lercher, Johannes A; Sharp, Ian D; Stutzmann, Martin

2012-08-01

Platinum nanoparticles supported on n- and p-type gallium nitride (GaN) are investigated as novel hybrid systems for the electronic control of catalytic activity via electronic interactions with the semiconductor support. In situ oxidation and reduction were studied with high pressure photoemission spectroscopy. The experiments revealed that the underlying wide-band-gap semiconductor has a large influence on the chemical composition and oxygen affinity of supported nanoparticles under X-ray irradiation. For as-deposited Pt cuboctahedra supported on n-type GaN, a higher fraction of oxidized surface atoms was observed compared to cuboctahedral particles supported on p-type GaN. Under an oxygen atmosphere, immediate oxidation was recorded for nanoparticles on n-type GaN, whereas little oxidation was observed for nanoparticles on p-type GaN. Together, these results indicate that changes in the Pt chemical state under X-ray irradiation depend on the type of GaN doping. The strong interaction between the nanoparticles and the support is consistent with charge transfer of X-ray photogenerated free carriers at the semiconductor-nanoparticle interface and suggests that GaN is a promising wide-band-gap support material for photocatalysis and electronic control of catalysis.

Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder

International Nuclear Information System (INIS)

Zuniga-Perez, J.; Kappei, L.; Deparis, C.; Chenot, S.; Leroux, M.; Reveret, F.; Jamadi, O.; Leymarie, J.; Grundmann, M.; Prado, E. de

2016-01-01

Nonpolar ZnO/ZnMgO-based optical microcavities have been grown on (10-10) m-plane ZnO substrates by plasma-assisted molecular beam epitaxy. Reflectivity measurements indicate an exponential increase of the cavity quality factor with the number of layers in the distributed Bragg reflectors. Most importantly, microreflectivity spectra recorded with a spot size in the order of 2 μm show a negligible photonic disorder (well below 1 meV), leading to local quality factors equivalent to those obtained by macroreflectivity. The anisotropic character of the nonpolar heterostructures manifests itself both in the surface features, elongated parallel to the in-plane c direction, and in the optical spectra, with two cavity modes being observed at different energies for orthogonal polarizations.

Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder

Energy Technology Data Exchange (ETDEWEB)

Zuniga-Perez, J., E-mail: jzp@crhea.cnrs.fr; Kappei, L.; Deparis, C.; Chenot, S.; Leroux, M. [CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne (France); Reveret, F.; Jamadi, O.; Leymarie, J. [Clermont Université, Institut Pascal (IP), BP 10448, F-63000 Clermont-Ferrand (France); CNRS, UMR 6602, IP, F-63171 Aubière (France); Grundmann, M. [CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne (France); Institut für Experimentelle Physik II, Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnestr. 5, 04103 Leipzig (Germany); Prado, E. de [CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne (France); Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, c/Dr Moliner 50, Burjassot, Valencia 46100 (Spain)

2016-06-20

Nonpolar ZnO/ZnMgO-based optical microcavities have been grown on (10-10) m-plane ZnO substrates by plasma-assisted molecular beam epitaxy. Reflectivity measurements indicate an exponential increase of the cavity quality factor with the number of layers in the distributed Bragg reflectors. Most importantly, microreflectivity spectra recorded with a spot size in the order of 2 μm show a negligible photonic disorder (well below 1 meV), leading to local quality factors equivalent to those obtained by macroreflectivity. The anisotropic character of the nonpolar heterostructures manifests itself both in the surface features, elongated parallel to the in-plane c direction, and in the optical spectra, with two cavity modes being observed at different energies for orthogonal polarizations.

Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

Science.gov (United States)

Gorai, Prashun; Seebauer, Edmund G.

2014-07-01

The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

International Nuclear Information System (INIS)

Gorai, Prashun; Seebauer, Edmund G.

2014-01-01

The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO 2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

International Nuclear Information System (INIS)

Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W.

2005-01-01

The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

Energy Technology Data Exchange (ETDEWEB)

Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W. (eds.)

2005-07-01

The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

Trap-assisted and Langevin-type recombination in organic light-emitting diodes

NARCIS (Netherlands)

Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

2011-01-01

Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the

Emission Characteristics of Organic Light-Emitting Diodes and Organic Thin-Films with Planar and Corrugated Structures

Directory of Open Access Journals (Sweden)

Mao-Kuo Wei

2010-04-01

Full Text Available In this paper, we review the emission characteristics from organic light-emitting diodes (OLEDs and organic molecular thin films with planar and corrugated structures. In a planar thin film structure, light emission from OLEDs was strongly influenced by the interference effect. With suitable design of microcavity structure and layer thicknesses adjustment, optical characteristics can be engineered to achieve high optical intensity, suitable emission wavelength, and broad viewing angles. To increase the extraction efficiency from OLEDs and organic thin-films, corrugated structure with micro- and nano-scale were applied. Microstructures can effectively redirects the waveguiding light in the substrate outside the device. For nanostructures, it is also possible to couple out the organic and plasmonic modes, not only the substrate mode.

Optimization of three-dimensional micropost microcavities for cavity quantum electrodynamics

International Nuclear Information System (INIS)

Vuckovic, Jelena; Pelton, Matthew; Scherer, Axel; Yamamoto, Yoshihisa

2002-01-01

This paper presents a detailed analysis, based on the first-principles finite-difference time-domain method, of the resonant frequency, quality factor (Q), mode volume (V), and radiation pattern of the fundamental (HE 11 ) mode in a three-dimensional distributed-Bragg-reflector (DBR) micropost microcavity. By treating this structure as a one-dimensional cylindrical photonic crystal containing a single defect, we are able to push the limits of Q/V beyond those achievable by standard micropost designs, based on the simple rules established for planar DBR microcavities. We show that some of the rules that work well for designing large-diameter microposts (e.g., high-refractive-index contrast) fail to provide high-quality cavities with small diameters. By tuning the thicknesses of mirror layers and the spacer, the number of mirror pairs, the refractive indices of high- and low-refractive index regions, and the cavity diameter, we are able to achieve Q as high as 10 4 , together with a mode volume of 1.6 cubic wavelengths of light in the high-refractive-index material. The combination of high Q and small V makes these structures promising candidates for the observation of such cavity-quantum-electrodynamics phenomena as strong coupling between a quantum dot and the cavity field, and single-quantum-dot lasing

Monitoring of benzene-induced hematotoxicity in mice by serial leukocyte counting using a microcavity array.

Science.gov (United States)

Hosokawa, Masahito; Asami, Marie; Yoshino, Tomoko; Tsujimura, Noriyuki; Takahashi, Masayuki; Nakasono, Satoshi; Tanaka, Tsuyoshi; Matsunaga, Tadashi

2013-02-15

Monitoring of hematotoxicity, which requires serial blood collection, is difficult to carry out in small animals due to a lack of non-invasive, individual animal-appropriate techniques that enable enumeration of leukocyte subsets from limited amounts of whole blood. In this study, a microfluidic device equipped with a microcavity array that enables highly efficient separation of leukocytes from submicroliters of whole blood was applied for hematotoxicity monitoring in mice. The microcavity array can specifically separate leukocytes from whole blood based on differences in the size and deformability between leukocytes and other blood cells. Mouse leukocytes recovered on aligned microcavities were continuously processed for image-based immunophenotypic analysis. Our device successfully recovered almost 100% of mouse leukocytes in 0.1 μL of whole blood without the effect of serial blood collection such as changes in body weight and total leukocyte count. We assessed benzene-associated hematotoxicity in mice using this system. Mice were administered with benzene once daily and the depression of leukocyte numbers induced in individual mice was successfully monitored from tail vein blood collected every other day for 2 weeks. Serial monitoring of the leukocyte number in individual mice will contribute to the understanding of hematotoxicity and reduction of the number of animal experiment trials. Copyright © 2012 Elsevier B.V. All rights reserved.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

Science.gov (United States)

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Bioengineered II-VI semiconductor quantum dot-carboxymethylcellulose nanoconjugates as multifunctional fluorescent nanoprobes for bioimaging live cells

Science.gov (United States)

Mansur, Alexandra A. P.; Mansur, Herman S.; Mansur, Rafael L.; de Carvalho, Fernanda G.; Carvalho, Sandhra M.

2018-01-01

Colloidal semiconductor quantum dots (QDs) are light-emitting ultra-small nanoparticles, which have emerged as a new class of nanoprobes with unique optical properties for bioimaging and biomedical diagnostic. However, to be used for most biomedical applications the biocompatibility and water-solubility are mandatory that can achieved through surface modification forming QD-nanoconjugates. In this study, semiconductor II-VI quantum dots of type MX (M = Cd, Pb, Zn, X = S) were directly synthesized in aqueous media and at room temperature using carboxymethylcellulose sodium salt (CMC) behaving simultaneously as stabilizing and surface biofunctional ligand. These nanoconjugates were extensively characterized using UV-visible spectroscopy, photoluminescence spectroscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, dynamic light scattering and zeta potential. The results demonstrated that the biopolymer was effective on nucleating and stabilizing the colloidal nanocrystals of CdS, ZnS, and PbS with the average diameter ranging from 2.0 to 5.0 nm depending on the composition of the semiconductor core, which showed quantum-size confinement effect. These QD/polysaccharide conjugates showed luminescent activity from UV-visible to near-infrared range of the spectra under violet laser excitation. Moreover, the bioassays performed proved that these novel nanoconjugates were biocompatible and behaved as composition-dependent fluorescent nanoprobes for in vitro live cell bioimaging with very promising perspectives to be used in numerous biomedical applications and nanomedicine.

Injection and detection of a spin-polarized current in a light-emitting diode

Science.gov (United States)

Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

1999-12-01

The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

Energy Technology Data Exchange (ETDEWEB)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Hurtado, A.; Al Seyab, R. K.; Henning, I. D.; Adams, M. J. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Korpijarvi, V.-M.; Guina, M. [Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

2014-11-03

We experimentally demonstrate the control of the light polarization emitted by a 1310 nm dilute nitride spin-Vertical Cavity Surface Emitting Laser (VCSEL) at room temperature. This is achieved by means of a combination of polarized optical pumping and polarized optical injection. Without external injection, the polarization of the optical pump controls that of the spin-VCSEL. However, the addition of the externally injected signal polarized with either left- (LCP) or right-circular polarization (RCP) is able to control the polarization of the spin-VCSEL switching it at will to left- or right-circular polarization. A numerical model has been developed showing a very high degree of agreement with the experimental findings.

Characterizing Surfaces of the Wide Bandgap Semiconductor Ilmenite with Scanning Probe Microcopies

Science.gov (United States)

Wilkins, R.; Powell, Kirk St. A.

1997-01-01

Ilmenite (FeTiO3) is a wide bandgap semiconductor with an energy gap of about 2.5eV. Initial radiation studies indicate that ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Two scanning probe microscopy methods have been used to characterize the surface of samples taken from Czochralski grown single crystals. The two methods, atomic force microscopy (AFM) and scanning tunneling microscopy (STM), are based on different physical principles and therefore provide different information about the samples. AFM provides a direct, three-dimensional image of the surface of the samples, while STM give a convolution of topographic and electronic properties of the surface. We will discuss the differences between the methods and present preliminary data of each method for ilmenite samples.

Driver circuit for pulse modulation of a semiconductor laser

International Nuclear Information System (INIS)

Ueki, A.

1975-01-01

A pulse modulation driver circuit for a semiconductor laser is disclosed which discriminates among input pulse signals composed of binary codes to detect the occurrence of a pulse having a code of ''I'' following a pulse having a code of ''0''. Detection of this pattern is used to control the driver to increase either or both the width or peak value of the pulse having a code of 1. The effect of this is to eliminate a pattern effect in the light emitted by the semiconductor laser caused by an attenuation of the population inversion in the laser. (U.S.)

All-optical temporal fractional order differentiator using an in-fiber ellipsoidal air-microcavity

Science.gov (United States)

Zhang, Lihong; Sun, Shuqian; Li, Ming; Zhu, Ninghua

2017-12-01

An all-optical temporal fractional order differentiator with ultrabroad bandwidth (~1.6 THz) and extremely simple fabrication is proposed and experimentally demonstrated based on an in-fiber ellipsoidal air-microcavity. The ellipsoidal air-microcavity is fabricated by splicing a single mode fiber (SMF) and a photonic crystal fiber (PCF) together using a simple arc-discharging technology. By changing the arc-discharging times, the propagation loss can be adjusted and then the differentiation order is tuned. A nearly Gaussian-like optical pulse with 3 dB bandwidth of 8 nm is launched into the differentiator and a 0.65 order differentiation of the input pulse is achieved with a processing error of 2.55%. Project supported by the the National Natural Science Foundation of China (Nos. 61522509, 61377002, 61535012), the National High-Tech Research & Development Program of China (No. SS2015AA011002), and the Beijing Natural Science Foundation (No. 4152052). Ming Li was supported in part by the Thousand Young Talent Program.

The optical constants of the organic thin films in the case of xanthats adsorption at the surface of semiconductors minerals

International Nuclear Information System (INIS)

Todoran, Radu; Todoran, Daniela

2008-01-01

The paper present the determinations of some kinetic parameters that characterize the kinetics of the adsorption phenomenon of some organic xanthate molecule on the surface of some natural semiconductor mineral (galena, sphalerite) in order to understand the inward mechanism of this phenomenon. Among the methods of inquiry that allow kinetics determination in situ the optical ones were chosen relying on the change of the liquid-mineral semiconductor interface, and permitting continuous inquires without disturbing the inward development of the processes. Into the computation, we took into the consideration the physical values which feature the roughness of the solid surface, the diffusion into liquid media and the energetic non-homogeneities of the surface. The R s /R p =f(θ) characteristic helps us to establish the thickness of the adsorbed layer, as well as to determine the optical parameters of the thin film. the experimental results allow us to get some information on the mineral and mineral-solution of xanthate, as well allow us to get some information on the parameters which, in correlation with other proportions experimentally determined - could had as to estimations of the dynamic of the surface of a semiconductor solid body. (Author)

Hybrid anode for semiconductor radiation detectors

Science.gov (United States)

Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

2013-11-19

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Light emitting device having peripheral emissive region

Science.gov (United States)

Forrest, Stephen R

2013-05-28

Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

Nanopatterned organic semiconductors for visible light communications

Science.gov (United States)

Yang, Xilu; Dong, Yurong; Zeng, Pan; Yu, Yan; Xie, Yujun; Gong, Junyi; Shi, Meng; Liang, Rongqing; Ou, Qiongrong; Chi, Nan; Zhang, Shuyu

2018-03-01

Visible light communication (VLC) is becoming an important and promising supplement to the existing Wi-Fi network for the coming 5G communications. Organic light-emitting semiconductors present much fast fluorescent decay rates compared to those of conventional colour-converting phosphors, therefore capable of achieving much higher bandwidths. Here we explore how nanopatterned organic semiconductors can further enhance the data rates of VLC links by improving bandwidths and signal-to-noise ratios (SNRs) and by supporting spatial multiplexing. We first demonstrate a colour-converting VLC system based on nanopatterned hyperbolic metamaterials (HMM), the bandwidth of which is enhanced by 50%. With regard to enhancing SNRs, we achieve a tripling of optical gain by integrating a nanopatterned luminescent concentrator to a signal receiver. In addition, we demonstrate highly directional fluorescent VLC antennas based on nanoimprinted polymer films, paving the way to achieving parallel VLC communications via spatialmultiplexing. These results indicate nanopatterned organic semiconductors provide a promising route to high speed VLC links.

One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

Science.gov (United States)

Dudy, L.; Aulbach, J.; Wagner, T.; Schäfer, J.; Claessen, R.

2017-11-01

Interacting electrons confined to only one spatial dimension display a wide range of unusual many-body quantum phenomena, ranging from Peierls instabilities to the breakdown of the canonical Fermi liquid paradigm to even unusual spin phenomena. The underlying physics is not only of tremendous fundamental interest, but may also have bearing on device functionality in future micro- and nanoelectronics with lateral extensions reaching the atomic limit. Metallic adatoms deposited on semiconductor surfaces may form self-assembled atomic nanowires, thus representing highly interesting and well-controlled solid-state realizations of such 1D quantum systems. Here we review experimental and theoretical investigations on a few selected prototypical nanowire surface systems, specifically Ge(0 0 1)-Au and Si(hhk)-Au, and the search for 1D quantum states in them. We summarize the current state of research and identify open questions and issues.

Fast pulsing dynamics of a vertical-cavity surface-emitting laser operating in the low-frequency fluctuation regime

International Nuclear Information System (INIS)

Sciamanna, M.; Rogister, F.; Megret, P.; Blondel, M.; Masoller, C.; Abraham, N. B.

2003-01-01

We analyze the dynamics of a vertical-cavity surface-emitting laser with optical feedback operating in the low-frequency fluctuation regime. By focusing on the fast pulsing dynamics, we show that the two linearly polarized modes of the laser exhibit two qualitatively different behaviors: they emit pulses in phase just after a power dropout and they emit pulses out of phase after the recovery process of the output power. As a consequence, two distinct statistical distributions of the fast pulsating total intensity are observed, either monotonically decaying from the noise level or peaked around the mean intensity value. We further show that gain self-saturation of the lasing transition strongly modifies the shape of the intensity distribution

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Directory of Open Access Journals (Sweden)

Bingqi Sun

2018-06-01

Full Text Available Two-dimensional (2D semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs, and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

Charge regulation at semiconductor-electrolyte interfaces.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2015-07-01

The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides

Science.gov (United States)

Kumar, Sushil; Williams, Benjamin S.; Qin, Qi; Lee, Alan W. M.; Hu, Qing; Reno, John L.

2007-01-01

Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers

Establishment of integrated information displays in aluminium surfaces using nanomanufacturing

DEFF Research Database (Denmark)

Prichystal, Jan; Hansen, Hans Nørgaard; Bladt, Henrik H.

2006-01-01

Bang & Olufsen has been working with a method for manufacturing ultra-thin structures in aluminium that can be penetrated by light. This work has resulted in a patent describing how to obtain this effect by material removal in local areas in a solid material. The idea behind an invisible display...... in aluminium concerns the processing of a metal workpiece in such a way that microcavities are formed from the backside of the workpiece. The microcavities must not penetrate the metal front side, but an ultra-thin layer of metal is left. It is possible to shine light through this layer. By ordering...... microcavities in a matrix, different symbols can be obtained by shining light from the backside of the workpiece. When there is no light from the backside, the front surface seems totally untouched. Three different manufacturing processes were investigated to achieve the desired functionality: laser...

Colour tuneable light-emitting transistor

Energy Technology Data Exchange (ETDEWEB)

Feldmeier, Eva J.; Melzer, Christian; Seggern, Heinz von [Electronic Materials Department, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

2010-07-01

In recent years the interest in ambipolar organic light-emitting field-effect transistors has increased steadily as the devices combine switching behaviour of transistors with light emission. Usually, small molecules and polymers with a band gap in the visible spectral range serve as semiconducting materials. Mandatory remain balanced injection and transport properties for both charge carrier types to provide full control of the spatial position of the recombination zone of electrons and holes in the transistor channel via the applied voltages. As will be presented here, the spatial control of the recombination zone opens new possibilities towards light-emitting devices with colour tuneable emission. In our contribution an organic light-emitting field-effect transistors is presented whose emission colour can be changed by the applied voltages. The organic top-contact field-effect transistor is based on a parallel layer stack of acenes serving as organic transport and emission layers. The transistor displays ambipolar characteristics with a narrow recombination zone within the transistor channel. During operation the recombination zone can be moved by a proper change in the drain and gate bias from one organic semiconductor layer to another one inducing a change in the emission colour. In the presented example the emission maxima can be switched from 530 nm to 580 nm.

Semiconductor plasmonic crystals : active control of THz extinction

NARCIS (Netherlands)

Schaafsma, M.C.; Gomez Rivas, J.

2013-01-01

We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are

Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation

International Nuclear Information System (INIS)

Piper, I M; Ediger, M; Wilson, A M; Wu, Y; Phillips, R T; Eastham, P R; Hugues, M; Hopkinson, M

2010-01-01

We review the practical conditions required to achieve a non-equilibrium BEC driven by quantum dynamics in a system comprising a microcavity field mode and a distribution of localised two-level systems driven to a step-like population inversion profile. A candidate system based on eight 3.8nm layers of In 0.23 Ga 0.77 As in GaAs shows promising characteristics with regard to the total dipole strength which can be coupled to the field mode.

Stable integrated hyper-parametric oscillator based on coupled optical microcavities.

Science.gov (United States)

Armaroli, Andrea; Feron, Patrice; Dumeige, Yannick

2015-12-01

We propose a flexible scheme based on three coupled optical microcavities that permits us to achieve stable oscillations in the microwave range, the frequency of which depends only on the cavity coupling rates. We find that the different dynamical regimes (soft and hard excitation) affect the oscillation intensity, but not their periods. This configuration may permit us to implement compact hyper-parametric sources on an integrated optical circuit with interesting applications in communications, sensing, and metrology.

Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface

Directory of Open Access Journals (Sweden)

Nataliya V. Finogenova

2003-12-01

Full Text Available In our paper we present the results of our research, which was carried out by means of semiconductor sensor techniques (SCS, which allowed evaluating heterogeneous death-rate of ozone (γ Teflon surface. When ozone concentration is near to Ambient Air Standard value, γ is assessed to be equal to 6,57*10-7. High technique response provide possibility to determine ozone contents in the air media and the percentage of ozone, decomposed on the communication surfaces and on the surfaces of installation in the low concentration range (1–100 ppb.

"Liquid-liquid-solid"-type superoleophobic surfaces to pattern polymeric semiconductors towards high-quality organic field-effect transistors.

Science.gov (United States)

Wu, Yuchen; Su, Bin; Jiang, Lei; Heeger, Alan J

2013-12-03

Precisely aligned organic-liquid-soluble semiconductor microwire arrays have been fabricated by "liquid-liquid-solid" type superoleophobic surfaces directed fluid drying. Aligned organic 1D micro-architectures can be built as high-quality organic field-effect transistors with high mobilities of >10 cm(2) ·V(-1) ·s(-1) and current on/off ratio of more than 10(6) . All these studies will boost the development of 1D microstructures of organic semiconductor materials for potential application in organic electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Abatement of waste gases and water during the processes of semiconductor fabrication.

Science.gov (United States)

Wen, Rui-mei; Liang, Jun-wu

2002-10-01

The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

Laser action on rare earth doped nitride semiconductor thin layers

International Nuclear Information System (INIS)

Oussif, A.; Diaf, M.

2010-01-01

Complete text of publication follows. The structure, chemical composition, properties, and their relationships in solids lay the foundation of materials science. Recently, great interest in rare-earth (RE)-doped wide-bandgap semiconductors, which combine the electronic properties of semiconductors with the unique luminescence features of RE ions, is from the fundamental standpoint of structure-composition-properties of solids. At first, a significant amount of work has been reported on the study of infrared emissions from Er 3+- doped semiconductors because Er 3+ exhibits luminescence at 1.54 μm, a wavelength used in optical communications. Since Steckl and Birkhahn first reported visible emission associated with Er from GaN:Er films, the RE-doped semiconductors have received considerable interest for possible application in light emitting devices. Molecular-beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) have been used mainly to grow GaN host films. The RE dopants were typically incorporated into the host films by in situ doping during the growth or by ion implantation after the growth. GaN doped with rare-earth elements (RE) hold significant potential for applications in optical devices, since they show sharp intense luminescence which is only minimally affected by temperature variations. Among the various RE dopants, Eu seems to be the most interesting, since it yields red luminescence 622 nm which has not been realized in commercially available light emitting devices (LEDs) that use InGaN active layers. We have earlier reported single crystalline growth of Eu-doped GaN and nearly temperature independent red luminescence at 622 nm originating from the intra-4f-4f transition of the Eu 3+ ion. The red luminescence was analyzed and determined to be generated through trap-level-mediated energy transfer from the semiconductor host.

Preparation and characterisation of light emitting porous semiconductors

International Nuclear Information System (INIS)

Harris, P.J.

1996-01-01

Semiconducting materials exhibit electrical conductivity in the region between that of metals and insulators. The electronic properties depend upon the particular element and the level of impurities contained within it. These materials are the basis of today's electronics industry with silicon being the most important element. It was believed until recently that efficient photoluminescence in the visible region was not possible from silicon due to its relatively small, indirect band-gap (1.12 eV). For this reason semiconductors with a larger, direct band-gap such as gallium arsenide have been used for optical devices. Photoluminescence from silicon has been observed in the infrared region but this was of little use to the opto-electronics industry. However, when silicon is in the form of small nano-structures, photoluminescence can be observed in the visible region from red to blue. This photoluminescence corresponds to a shift in the band gap to between 1.5 eV and 4.5 eV. This is in accordance with the predictions of quantum mechanics for structures of this scale. Nano-structures of silicon and of other semiconductors are relatively easy to produce. Electro-chemical etching is by far the most reliable method, resulting in uniform and reproducible structures. Anodic etching in a hydrofluoric acid based etch solution results in the silicon becoming porous to a depth of the order of microns. The lateral dimensions of these porous structures are in the range of a few nanometres resulting in an aspect ratio of the order of 1000:1. These materials studied in this work have been studied with the aid of EXAFS, scanning probe microscopy and Muon spectroscopy in order to determine the local structures. Measurements of the photoluminescence intensity have been taken at the synchrotron radiation facility, (Daresbury Laboratory). These results show that the observed photoluminescence is temperature dependent. The porous silicon samples studied for this work showed

Reciprocal-Space Engineering of Quasi-Bound States in the Continuum in Photonic Crystal Slabs for High-Q Microcavities

DEFF Research Database (Denmark)

Chung, Il-Sug; Taghizadeh, Alireza

2017-01-01

The bound states in the continuum (BICs) in photonic crystal (PhC) slabs presume infinite periodicity in the inplane direction. Thus, a large number of unit cells are typically required to implement the BICs with a high quality (Q) factor. Here, we report on a method to engineer the reciprocal......-space properties of BICs, which enables to keep the effect of the BIC phenomenon strong even for a microcavity of a few unit cells. For example, based on this method, a 3D microcavity of 4 unit cells can attain a Q factor of 18k. This allows for various BIC studies in a very compact platform, as well as novel...

Ultrastrong exciton-photon coupling in single and coupled organic microcavities

Science.gov (United States)

Liu, Bin; Bramante, Rosemary; Valle, Brent; Singer, Kenneth; Khattab, Tawfik; Williams, Jarrod; Twieg, Robert

2015-03-01

We have demonstrated ultrastrong light-matter coupling in organic planar microcavities composed of a neat glassy organic dye film between two metallic (aluminum) mirrors in a half-cavity configuration. Such cavities are characterized by Q factors around 10. Tuning the thickness of the organic layer enables the observation of the ultrastrong coupling regime. Via reflectivity measurements, we observe a very large Rabi splitting around 1.227 eV between upper and lower polariton branches at room temperature, and we detect polariton emission from the lower polariton branch via photoluminescence measurements. The large splitting is due to the large oscillator strength of the neat dye glass, and to the match of the low-Q cavity spectral width to the broad absorption width of the dye film material. We also study the interaction between excitonic states of neat glassy organic dye and cavity modes within coupled microcavity structures. The high-reflectivity mirrors are formed from distributed Bragg reflectors (DBR), which are multilayer films fabricated using the coextrusion process, containing alternating layers of high (SAN25, n =1.57) and low (Dyneon THV 220G, n =1.37) refractive index dielectric polymers. Nonlinear optical measurements will be discussed. This research was supported by the National Science Foundation Center for Layered Polymer Systems (CLiPS) under Grant Number DMR-0423914.

Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor.

Science.gov (United States)

Caroselli, Raffaele; Martín Sánchez, David; Ponce Alcántara, Salvador; Prats Quilez, Francisco; Torrijos Morán, Luis; García-Rupérez, Jaime

2017-12-05

Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU), which allowed us to directly detect refractive index variations in the 10 -7 RIU range.

Universal quantum gates on electron-spin qubits with quantum dots inside single-side optical microcavities.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2014-01-13

We present some compact quantum circuits for a deterministic quantum computing on electron-spin qubits assisted by quantum dots inside single-side optical microcavities, including the CNOT, Toffoli, and Fredkin gates. They are constructed by exploiting the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a single-side optical microcavity as a result of cavity quantum electrodynamics. Our universal quantum gates have some advantages. First, all the gates are accomplished with a success probability of 100% in principle. Second, our schemes require no additional electron-spin qubits and they are achieved by some input-output processes of a single photon. Third, our circuits for these gates are simple and economic. Moreover, our devices for these gates work in both the weak coupling and the strong coupling regimes, and they are feasible in experiment.

Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation

Energy Technology Data Exchange (ETDEWEB)

Piper, I M; Ediger, M; Wilson, A M; Wu, Y; Phillips, R T [Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Eastham, P R [School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Hugues, M; Hopkinson, M, E-mail: imp24@cam.ac.u [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom)

2010-09-01

We review the practical conditions required to achieve a non-equilibrium BEC driven by quantum dynamics in a system comprising a microcavity field mode and a distribution of localised two-level systems driven to a step-like population inversion profile. A candidate system based on eight 3.8nm layers of In{sub 0.23}Ga{sub 0.77}As in GaAs shows promising characteristics with regard to the total dipole strength which can be coupled to the field mode.

Reverse Non-Equilibrium Molecular Dynamics Demonstrate That Surface Passivation Controls Thermal Transport at Semiconductor-Solvent Interfaces.

Science.gov (United States)

Hannah, Daniel C; Gezelter, J Daniel; Schaller, Richard D; Schatz, George C

2015-06-23

We examine the role played by surface structure and passivation in thermal transport at semiconductor/organic interfaces. Such interfaces dominate thermal transport in semiconductor nanomaterials owing to material dimensions much smaller than the bulk phonon mean free path. Utilizing reverse nonequilibrium molecular dynamics simulations, we calculate the interfacial thermal conductance (G) between a hexane solvent and chemically passivated wurtzite CdSe surfaces. In particular, we examine the dependence of G on the CdSe slab thickness, the particular exposed crystal facet, and the extent of surface passivation. Our results indicate a nonmonotonic dependence of G on ligand-grafting density, with interfaces generally exhibiting higher thermal conductance for increasing surface coverage up to ∼0.08 ligands/Å(2) (75-100% of a monolayer, depending on the particular exposed facet) and decreasing for still higher coverages. By analyzing orientational ordering and solvent penetration into the ligand layer, we show that a balance of competing effects is responsible for this nonmonotonic dependence. Although the various unpassivated CdSe surfaces exhibit similar G values, the crystal structure of an exposed facet nevertheless plays an important role in determining the interfacial thermal conductance of passivated surfaces, as the density of binding sites on a surface determines the ligand-grafting densities that may ultimately be achieved. We demonstrate that surface passivation can increase G relative to a bare surface by roughly 1 order of magnitude and that, for a given extent of passivation, thermal conductance can vary by up to a factor of ∼2 between different surfaces, suggesting that appropriately tailored nanostructures may direct heat flow in an anisotropic fashion for interface-limited thermal transport.

Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

International Nuclear Information System (INIS)

Walukiewicz, W.

1988-02-01

The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

Electron emission from MOS electron emitters with clean and cesium covered gold surface

DEFF Research Database (Denmark)

Nielsen, Gunver; Thomsen, Lasse Bjørchmar; Johansson, Martin

2009-01-01

MOS (metal-oxide-semiconductor) electron emitters consisting of a Si substrate, a SiO2 tunnel barrier and a Ti (1 nm)/Au(7 nm) top-electrode, with an active area of 1 cm(2) have been produced and studied with surface science techniques under UHV (ultra high vacuum) conditions and their emission...... characteristics have been investigated. It is known, that deposition of an alkali metal on the emitting surface lowers the work function and increases the emission efficiency. For increasing Cs coverages the surface has been characterized by X-ray Photoelectron Spectroscopy (XPS), Ion Scattering Spectroscopy (ISS...

Fermi-edge exciton-polaritons in doped semiconductor microcavities with finite hole mass

Science.gov (United States)

Pimenov, Dimitri; von Delft, Jan; Glazman, Leonid; Goldstein, Moshe

2017-10-01

The coupling between a 2D semiconductor quantum well and an optical cavity gives rise to combined light-matter excitations, the exciton-polaritons. These were usually measured when the conduction band is empty, making the single polariton physics a simple single-body problem. The situation is dramatically different in the presence of a finite conduction-band population, where the creation or annihilation of a single exciton involves a many-body shakeup of the Fermi sea. Recent experiments in this regime revealed a strong modification of the exciton-polariton spectrum. Previous theoretical studies concerned with nonzero Fermi energy mostly relied on the approximation of an immobile valence-band hole with infinite mass, which is appropriate for low-mobility samples only; for high-mobility samples, one needs to consider a mobile hole with large but finite mass. To bridge this gap, we present an analytical diagrammatic approach and tackle a model with short-ranged (screened) electron-hole interaction, studying it in two complementary regimes. We find that the finite hole mass has opposite effects on the exciton-polariton spectra in the two regimes: in the first, where the Fermi energy is much smaller than the exciton binding energy, excitonic features are enhanced by the finite mass. In the second regime, where the Fermi energy is much larger than the exciton binding energy, finite mass effects cut off the excitonic features in the polariton spectra, in qualitative agreement with recent experiments.

Studies of solution-processed organic light-emitting diodes and their materials

Energy Technology Data Exchange (ETDEWEB)

Hellerich, Emily [Iowa State Univ., Ames, IA (United States)

2013-01-01

-coated mixed emitting layer (EML) is used, consisting of a polymer and a small molecule that both emit in the near UV and blue. The resulting combined spectra gives a wide band that can be used to create narrow microcavity emission peaks of 373 to 469 nm, depending on the device thickness (i.e. the cavity’s optical length). In the process of this effort, the mixed EML presented interesting complexities that we attempt to explain via simulation and morphology study.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Energy Technology Data Exchange (ETDEWEB)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

2015-08-24

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

Science.gov (United States)

Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

2018-04-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit [Knoxville, TN

2011-03-15

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Semiconductor plasmonic crystals: active control of THz extinction

International Nuclear Information System (INIS)

Schaafsma, M C; Rivas, J Gómez

2013-01-01

We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers. (invited article)

Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor

Directory of Open Access Journals (Sweden)

Raffaele Caroselli

2017-12-01

Full Text Available Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU, which allowed us to directly detect refractive index variations in the 10−7 RIU range.

Metallurgy and purification of semiconductor materials

International Nuclear Information System (INIS)

Mughal, G.R.; Ali, M.M.; Ali, I.

1996-01-01

In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

Exciton-polariton dynamics in a GaAs bulk microcavity

Science.gov (United States)

Ceccherini, S.; Gurioli, M.; Bogani, F.; Colocci, M.; Tredicucci, A.; Bassani, F.; Beltram, F.; Sorba, L.

1998-01-01

We present a full analysis of exciton dynamics in a GaAs λ/2 bulk microcavity following excitation by ultrafast laser pulses. Coherent dynamics was probed by means of an interferometric technique; beating and dephasing times were studied for various excitation intensities. At high incident power, population effects begin to show up reducing exciton oscillator strength and suppressing Rabi splitting. This feature produces marked non-linearities in the input-output characteristic of the optical functions, which were studied in view of reaching bistable operation. Theoretical calculations performed within the transfer-matrix framework show good agreement with experimental results.

High Sensitivity Detection of CdSe/ZnS Quantum Dot-Labeled DNA Based on N-type Porous Silicon Microcavities.

Science.gov (United States)

Lv, Changwu; Jia, Zhenhong; Lv, Jie; Zhang, Hongyan; Li, Yanyu

2017-01-01

N-type macroporous silicon microcavity structures were prepared using electrochemical etching in an HF solution in the absence of light and oxidants. The CdSe/ZnS water-soluble quantum dot-labeled DNA target molecules were detected by monitoring the microcavity reflectance spectrum, which was characterized by the reflectance spectrum defect state position shift resulting from changes to the structures' refractive index. Quantum dots with a high refractive index and DNA coupling can improve the detection sensitivity by amplifying the optical response signals of the target DNA. The experimental results show that DNA combined with a quantum dot can improve the sensitivity of DNA detection by more than five times.

Transient measurements with an ultrafast scanning tunneling microscope on semiconductor surfaces

DEFF Research Database (Denmark)

Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

1998-01-01

We demonstrate: the use of an ultrafast scanning tunneling microscope on a semiconductor surface. Laser-induced transient signals with 1.8 ps rise time are detected, The investigated sample is a low-temperature grown GaAs layer plated on a sapphire substrate with a thin gold layer that serves as st...... bias contact, For comparison, the measurements are performed with the tip in contact to the sample as well as in tunneling above the surface, In contact and under bias, the transient signals are identified as a transient photocurrent, An additional signal is generated by a transient voltage induced...... by the nonuniform carrier density created by the absorption of the light (photo Dember effect). The transient depends in sign and in shape on the direction of optical excitation. This signal is the dominating transient in tunneling mode. The signals are explained by a capacitive coupling across the tunneling gap...

Single filament semiconductor laser

International Nuclear Information System (INIS)

Botez, D.

1980-01-01

A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

KAUST Repository

Majid, Mohammed Abdul

2015-06-26

The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

Numerical study on discharge process of microcavity plasma

International Nuclear Information System (INIS)

Xia Guangqing; Xue Weihua; Wang Dongxue; Zhu Guoqiang; Zhu Yu

2012-01-01

The evolution of plasma parameters during high pressure discharge in the microcavity with a hollow anode was numerically studied, with a two-dimensional self-consistent fluid model. The simulations were performed with argon at 13.3 kPa. The numerical results show that during the discharge the electric field around the cathode transforms from an axial field to a radial field, the plasma density gets the maximum value on the central line of the cavity and the location of the maximum density moves from the region near anode at the initial stage to the cathode vicinity at the stable stage, and the maximum electron temperature occurs in the ring sheath of cathode. (authors)

Commercial mode-locked vertical external cavity surface emitting lasers

Science.gov (United States)

Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

2018-02-01

This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

Full quantum treatment of charge dynamics in amorphous molecular semiconductors

Science.gov (United States)

de Vries, Xander; Friederich, Pascal; Wenzel, Wolfgang; Coehoorn, Reinder; Bobbert, Peter A.

2018-02-01

We present a treatment of charge dynamics in amorphous molecular semiconductors that accounts for the coupling of charges to all intramolecular phonon modes in a fully quantum mechanical way. Based on ab initio calculations, we derive charge transfer rates that improve on the widely used semiclassical Marcus rate and obtain benchmark results for the mobility and energetic relaxation of electrons and holes in three semiconductors commonly applied in organic light-emitting diodes. Surprisingly, we find very similar results when using the simple Miller-Abrahams rate. We conclude that extracting the disorder strength from temperature-dependent charge transport studies is very possible but extracting the reorganization energy is not.

Microscopic theory of photon-correlation spectroscopy in strong-coupling semiconductors

Energy Technology Data Exchange (ETDEWEB)

Schneebeli, Lukas

2009-11-27

While many quantum-optical phenomena are already well established in the atomic systems, like the photon antibunching, squeezing, Bose-Einstein condensation, teleportation, the quantum-optical investigations in semiconductors are still at their beginning. The fascinating results observed in the atomic systems inspire physicists to demonstrate similar quantum-optical effects also in the semiconductor systems. In contrast to quantum optics with dilute atomic gases, the semiconductors exhibit a complicated many-body problem which is dominated by the Coulomb interaction between the electrons and holes and by coupling with the semiconductor environment. This makes the experimental observation of similar quantum-optical effects in semiconductors demanding. However, there are already experiments which have verified nonclassical effects in semiconductors. In particular, experiments have demonstrated that semiconductor quantum dots (QDs) can exhibit the single-photon emission and generation of polarization-entangled photon pairs. In fact, both atom and QD systems, embedded within a microcavity, have become versatile platforms where one can perform systematic quantum-optics investigations as well as development work toward quantum-information applications. Another interesting field is the strong-coupling regime in which the light-matter coupling exceeds both the decoherence rate of the atom or QD and the cavity resulting in a reversible dynamics between light and matter excitations. In the strong-coupling regime, the Jaynes-Cummings ladder is predicted and shows a photon-number dependent splitting of the new dressed strong-coupling states which are the polariton states of the coupled light-matter system. Although the semiclassical effect of the vacuum Rabi splitting has already been observed in QDs, the verification of the quantum-mechanical Jaynes-Cummings splitting is still missing mainly due to the dephasing. Clearly, the observation of the Jaynes-Cummings ladder in QDs

Analysis of defects near the surface and the interface of semiconductors by monoenergetic positron beam

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro

1989-01-01

A monoenergetic low-speed positron beam line is constructed and a study is made on defects near the surface and the interface of semiconductors by using the beam line. Sodium-22 is used as beam source. Ion implantation, though being an essential technique for semiconductor integrated circuit production, can introduce lattice defects, affecting the yield and reliability of the resultant semiconductor devices. Some observations are made on the dependence of the Doppler broadening on the depth, and the ΔS-E relationship in P + -ion implanted SiO 2 (43nm)-Si. These observations demonstrate that monoenergetic positron beam is useful to detect hole-type defects resulting from ion implantation over a very wide range of defect density. Another study is made for the detection of defects near an interface. Positrons are expected to drift when left in an electric field with a gradient. Observations made here show that positrons can be concentrated at any desired interface by introducing an electric field intensity gradient in the oxide. This process also serves for accurate measurement of the electronic structure at the interface, and the effect of ion implantation and radiations on the interface. (N.K.)

Two-photon interference from a quantum dot-microcavity: Persistent pure-dephasing and suppression of time-jitter

DEFF Research Database (Denmark)

Unsleber, Sebastian; McCutcheon, Dara; Dambach, Michael

2015-01-01

We demonstrate the emission of highly indistinguishable photons from a quasi-resonantly pumped coupledquantum dot–microcavity system operating in the regime of cavity quantum electrodynamics. Changing thesample temperature allows us to vary the quantum dot–cavity detuning and, on spectral resonance...

Two-photon interference from a quantum dot-microcavity: Persistent pure-dephasing and suppression of time-jitter

DEFF Research Database (Denmark)

Unsleber, S.; McCutcheon, Dara; Dambach, M.

We demonstrate the emission of highly indistinguishable photons from a quasiresonantly pumped coupled quantum dot–microcavity system operating in the regime of cavity quantum electrodynamics. Changing the sample temperature allows us to vary the quantum dot–cavity detuning, and on spectral...

Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light

Energy Technology Data Exchange (ETDEWEB)

Marchelek, M. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Grabowska, E., E-mail: ewelina.grabowska@ug.edu.pl [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Klimczuk, T. [Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdansk University of Technology, G. Narutowicza 11/12, 80-233 Gdansk (Poland); Lisowski, W. [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44-52, 01-224 Warsaw (Poland); Zaleska-Medynska, A. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland)

2017-01-30

Highlights: • Novel semiconductors decorated by CdTe QDs and/or Pt NPs were synthesized. • Photodeposition and radiolysis is an effective method to obtaining Pt NPs. • CdTe decorated samples were prepared by absorption of QDs on matrix surface. • KTaO{sub 3}/CdTe-Pt{sub (R)} showed highest photocatalytic performance. • The enhanced performance was associated with electron trap mechanism. - Abstract: A novel synthesis process was used to prepare TiO{sub 2} microspheres, TiO{sub 2} P-25, SrTiO{sub 3} and KTaO{sub 3} decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) with energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), photoluminescence spectrometry (PL), Fourier transform infrared (FT-IR) and Raman spectra, diffuse reflectance spectroscopy (DRS) and BET surface area analysis. The photocatalytic decomposition of toluene in gas phase, activated by light-emitting diodes (LEDs), with the CdTe/Pt nanoparticles-modified TiO{sub 2} microspheres, P25, SrTiO{sub 3} and KTaO{sub 3} semiconductors was investigated under UV–vis and visible irradiation.The results showed that the photoactivity depends on semiconductor matrix. The highest photoactivity under Vis light was observed for KTaO{sub 3}/CdTe-Pt{sub (R)} sample (56% of toluene was decompose after 30 min of irradiation). The efficiency of the most active sample was 3 times higher than result for P25 and two times higher than for unmodified KTaO{sub 3}.

EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

Science.gov (United States)

Han, Jung; Kneissl, Michael

2012-02-01

topics including growth and heteroepitaxy, bulk GaN substrates, theory and modelling, optical properties, laser diodes and LEDs as well as transport properties and electronics. Farrell et al review materials and growth issues for high-performance non- and semipolar light-emitting devices, and Scholz provides an overview of heteroepitaxial growth of semipolar GaN. Okada et al review growth mechanisms of non- and semipolar GaN layers on patterned sapphire substrates, and Vennéguès discusses defect reduction methods for heteroepitaxially grown non- and semipolar III-nitride films. Leung et al explain how kinetic Wulff plots can be used to design and control non-polar and semipolar GaN heteroepitaxy, and a contribution by Sawaki et al explores the impurity incorporation in (1-101) GaN grown on Si substrates. In the area of bulk crystal growth Kucharski et al review non- and semipolar GaN substrates by ammonothermal growth, and Chichibu et al discuss the challenges for epitaxial growth of InGaN on free-standing m-plane GaN substrates. Calculation of semipolar orientations for wurtzitic semiconductor heterostructures and their application to nitrides and oxides are reviewed by Bigenwald et al, and Ito et al present an ab initio approach to reconstruction, adsorption, and incorporation on GaN surfaces. Finally, the theoretical description of non-polar and semipolar nitride semiconductor quantum-well structures is presented by Ahn et al. In a discussion of the optical properties, Kisin et al discuss the effect of the quantum well population on the optical characteristics of polar, semipolar and non-polar III-nitride light emitters, and Jönen et al investigate the indium incorporation and optical properties of non- and semipolar GaInN QW structures. Wernicke et al explore the emission wavelength of polar, non-polar, and semipolar InGaN quantum wells and the incorporation of indium. In a contribution by Melo et al, the gain in polar and non-polar/semipolar gallium

Theoretical studies of structural and electronic properties of overlayers on semiconductor surfaces

International Nuclear Information System (INIS)

Cakmak, M.

1999-06-01

In this thesis we report the results of ab initio density functional calculations of equilibrium atomic geometry, electronic states and chemical bonding for the adsorption of elemental S and H 2 S on chosen semiconductor surfaces. The results are in good agreement with the available experimental results and indicate the need for further experimental work. In Chapter 2 of this thesis, I describe the formalism of the ab initio pseudopotential theory and the computational procedures which are used in this thesis. In the following chapter, a few experimental techniques are discussed, which we subsequently use their results to compare with our theoretical calculated results. In Chapter 4 the passivation of S on InP(110) is investigated. Two sets of geometries are used; non-reacted geometries and reacted geometries. For non-reacted full-monolayer coverage, the epitaxially continued layer structure is found to be the most energetically favourable and it exhibits a good semiconducting nature. For an ordered reacted model with the adsorbate S atoms exchanged with their neighbouring P atoms, the average vertical distance between the top two layers is in agreement with x-ray standing wave analysis, but is characterized by a small band gap. In Chapter 5 adsorption of the H 2 S molecule on the InP(110), GaAs(110) and GaP(110) surfaces is investigated within a dissociative adsorption model. In general the adsorption of H 2 S on the three semiconductors shows similar behaviour. In Chapter 6 the adsorption of elemental S on Si(001) is investigated using three adsorption models; hemisulfide-(2 x 1) structure, monosulfide-(1 x 1) structure, and disulfide-(1 x 1) structure. An analysis of the surface free energy suggests that the monosulfide structure is more stable than the hemisulfide and disulfide structures. This result is also used to investigate the adsorption of elemental S on the Ge(001) surface. In Chapter 7, the adsorption of the H 2 S molecule on the Si(001) and Ge(001

The Detection of Helicobacter hepaticus Using Whispering-Gallery Mode Microcavity Optical Sensors

Directory of Open Access Journals (Sweden)

Mark E. Anderson

2015-08-01

Full Text Available Current bacterial detection techniques are relatively slow, require bulky instrumentation, and usually require some form of specialized training. The gold standard for bacterial detection is culture testing, which can take several days to receive a viable result. Therefore, simpler detection techniques that are both fast and sensitive could greatly improve bacterial detection and identification. Here, we present a new method for the detection of the bacteria Helicobacter hepaticus using whispering-gallery mode (WGM optical microcavity-based sensors. Due to minimal reflection losses and low material adsorption, WGM-based sensors have ultra-high quality factors, resulting in high-sensitivity sensor devices. In this study, we have shown that bacteria can be non-specifically detected using WGM optical microcavity-based sensors. The minimum detection for the device was 1 × 104 cells/mL, and the minimum time of detection was found to be 750 s. Given that a cell density as low as 1 × 103 cells/mL for Helicobacter hepaticus can cause infection, the limit of detection shown here would be useful for most levels where Helicobacter hepaticus is biologically relevant. This study suggests a new approach for H. hepaticus detection using label-free optical sensors that is faster than, and potentially as sensitive as, standard techniques.

Modelling Laser Milling of Microcavities for the Manufacturing of DES with Ensembles

Directory of Open Access Journals (Sweden)

Pedro Santos

2014-01-01

Full Text Available A set of designed experiments, involving the use of a pulsed Nd:YAG laser system milling 316L Stainless Steel, serve to study the laser-milling process of microcavities in the manufacture of drug-eluting stents (DES. Diameter, depth, and volume error are considered to be optimized as functions of the process parameters, which include laser intensity, pulse frequency, and scanning speed. Two different DES shapes are studied that combine semispheres and cylinders. Process inputs and outputs are defined by considering the process parameters that can be changed under industrial conditions and the industrial requirements of this manufacturing process. In total, 162 different conditions are tested in a process that is modeled with the following state-of-the-art data-mining regression techniques: Support Vector Regression, Ensembles, Artificial Neural Networks, Linear Regression, and Nearest Neighbor Regression. Ensemble regression emerged as the most suitable technique for studying this industrial problem. Specifically, Iterated Bagging ensembles with unpruned model trees outperformed the other methods in the tests. This method can predict the geometrical dimensions of the machined microcavities with relative errors related to the main average value in the range of 3 to 23%, which are considered very accurate predictions, in view of the characteristics of this innovative industrial task.

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

Science.gov (United States)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

Plasmonic Perovskite Light-Emitting Diodes Based on the Ag-CsPbBr3 System.

Science.gov (United States)

Zhang, Xiaoli; Xu, Bing; Wang, Weigao; Liu, Sheng; Zheng, Yuanjin; Chen, Shuming; Wang, Kai; Sun, Xiao Wei

2017-02-08

The enhanced luminescence through semiconductor-metal interactions suggests the great potential of device performance improvement via properly tailored plasmonic nanostructures. Surface plasmon enhanced electroluminescence in an all-inorganic CsPbBr 3 perovskite light-emitting diode (LED) is fabricated by decorating the hole transport layer with the synthesized Ag nanorods. An increase of 42% and 43.3% in the luminance and efficiency is demonstrated for devices incorporated with Ag nanorods. The device with Ag introduction indicates identical optoelectronic properties to the controlled device without Ag nanostructures. The increased spontaneous emission rate caused by the Ag-induced plasmonic near-field effect is responsible for the performance enhancement. Therefore, the plasmonic Ag-CsPbBr 3 nanostructure studied here provides a novel strategy on the road to the future development of perovskite LEDs.

Semiconductor particle mediated photoelectron transfers in bilayer lipid membranes

International Nuclear Information System (INIS)

Fendler, J.H.; Baral, S.

1989-01-01

This paper discusses semiconductor particles in situ generated on the cis surface of glyceryl monooleate (GMO) bilayer lipid membranes (BLMs), that have been used to mediate photoelectric effects. The presence of semiconductors on the BLM surface is addressed. The observed photoelectric effects are rationalized and presented

Surface Tension Directed Fluidic Self-Assembly of Semiconductor Chips across Length Scales and Material Boundaries

Directory of Open Access Journals (Sweden)

Shantonu Biswas

2016-03-01

Full Text Available This publication provides an overview and discusses some challenges of surface tension directed fluidic self-assembly of semiconductor chips which are transported in a liquid medium. The discussion is limited to surface tension directed self-assembly where the capture, alignment, and electrical connection process is driven by the surface free energy of molten solder bumps where the authors have made a contribution. The general context is to develop a massively parallel and scalable assembly process to overcome some of the limitations of current robotic pick and place and serial wire bonding concepts. The following parts will be discussed: (2 Single-step assembly of LED arrays containing a repetition of a single component type; (3 Multi-step assembly of more than one component type adding a sequence and geometrical shape confinement to the basic concept to build more complex structures; demonstrators contain (3.1 self-packaging surface mount devices, and (3.2 multi-chip assemblies with unique angular orientation. Subsequently, measures are discussed (4 to enable the assembly of microscopic chips (10 μm–1 mm; a different transport method is introduced; demonstrators include the assembly of photovoltaic modules containing microscopic silicon tiles. Finally, (5 the extension to enable large area assembly is presented; a first reel-to-reel assembly machine is realized; the machine is applied to the field of solid state lighting and the emerging field of stretchable electronics which requires the assembly and electrical connection of semiconductor devices over exceedingly large area substrates.

Progress in Piezo-Phototronic-Effect-Enhanced Light-Emitting Diodes and Pressure Imaging.

Science.gov (United States)

Pan, Caofeng; Chen, Mengxiao; Yu, Ruomeng; Yang, Qing; Hu, Youfan; Zhang, Yan; Wang, Zhong Lin

2016-02-24

Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non-central symmetric crystal structures. The three-way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo-phototronics. This effect can efficiently manipulate the emission intensity of light-emitting diodes (LEDs) by utilizing the piezo-polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo-phototronic-effect-enhanced LEDs is reviewed; following their development from single-nanowire pressure-sensitive devices to high-resolution array matrices for pressure-distribution mapping applications. The piezo-phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface capped fluorescent semiconductor nanoparticles: radiolytic synthesis and some of its biological applications

International Nuclear Information System (INIS)

Saha, A.

2006-01-01

Semiconductor nanocrystals or colloidal quantum dots (QD's) have generated great research interest because of their unusual properties arising out of quantum confinement effects. Many researchers in the field of nanotechnology focus on the 'high quality' semiconductor quantum dots. A good synthetic route should yield nanoparticles with narrow size distribution, good crystallinity, high photostability, desired surface properties and high photoluminescence quantum efficiency. In the domain of colloidal chemistry, reverse micellar synthesis, high temperature thermolysis using organometallic precursors and synthesis in aqueous media using polyphosphates or thiols as stabilizers are the most prominent ones. In contrast, γ-radiation assisted synthesis can offer a simplified approach to prepare size-controlled nanoparticles at room temperature. Syntheses of thiol-capped II-VI nanoparticles by radiolytic method, its characterization and some of its luminescence-based applications of biological relevance will be presented. The versatility of thiols (RSH) can be emphasized here as changing the R-group imparts different functionality to the particles and thus chemical behavior of the particles can be manipulated according to the application intended for. (authors)

Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications

Science.gov (United States)

Wellmann, Peter; Syväjärvi, Mikael; Ou, Haiyan

2014-03-01

understanding the device performance. In relation to these, the surface pre-treatment and deposition technique can influence the reliability and electric field durability of the system, and relate to interface and near interface regions between the dielectric and semiconductor which can host electronic defects which change the surface potential, reduces mobility and enhance the recombination of charge carriers. At the end, materials for energy savings are critically needed. At the symposium ''Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications'', held at the E-MRS 2013 Spring meeting, 27-31 May, 2013 Strasbourg, France, a variety of concepts were presented. In this publication, a selection is presented that represents a range of issues from materials to reliability processing to system approaches. Acknowledgements: Technical support during preparation of the symposium program and proceedings by Saskia Schimmel is greatly acknowledged.

III-nitride based light emitting diodes and applications

CERN Document Server

Han, Jung; Amano, Hiroshi; Morkoç, Hadis

2017-01-01

The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performanc...

Advances of Optofluidic Microcavities for Microlasers and Biosensors

Directory of Open Access Journals (Sweden)

Zhiqing Feng

2018-03-01

Full Text Available Optofluidic microcavities with high Q factor have made rapid progress in recent years by using various micro-structures. On one hand, they are applied to microfluidic lasers with low excitation thresholds. On the other hand, they inspire the innovation of new biosensing devices with excellent performance. In this article, the recent advances in the microlaser research and the biochemical sensing field will be reviewed. The former will be categorized based on the structures of optical resonant cavities such as the Fabry–Pérot cavity and whispering gallery mode, and the latter will be classified based on the working principles into active sensors and passive sensors. Moreover, the difficulty of single-chip integration and recent endeavors will be briefly discussed.

5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications

Science.gov (United States)

Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.; Sigrist, M. W.

2010-08-01

Mid-IR tunable VECSELs (Vertical External-Cavity Surface-Emitting Lasers) emitting at 4-7 μm wavelengths and suitable for spectroscopic sensing applications are described. They are realized with lead-chalcogenide (IV-VI) narrow band gap materials. The active part, a single 0.6-2-μm thick PbTe or PbSe gain layer, is grown onto an epitaxial Bragg mirror consisting of two or three Pb1- y Eu y Te/BaF2 quarter-wavelength layer pairs. All layers are deposited by MBE in a single run employing a BaF2 or Si substrate, no further processing is needed. The cavity is completed with an external curved top mirror, which is again realized with an epitaxial Bragg structure. Pumping is performed optically with a 1.5-μm laser. Maximum output power for pulsed operation is currently up to >1 Wp at -173°C and >10 mW at 10°C. In continuous wave (CW) operation, 18 mW at 100 K are reached. Still higher operating temperatures and/or powers are expected with better heat-removal structures and better designs employing QW (Quantum-Wells). Advantages of mid-IR VECSELs compared to edge-emitting lasers are their very good beam quality (circular beam with 15 μm are accessible with Pb1- y X y Z (X=Sr, Eu, Sn, Z=Se, Te) and/or including QW.

Hybrid fluorescent layer emitting polarized light

Directory of Open Access Journals (Sweden)

Mohammad Mohammadimasoudi

2017-07-01

Full Text Available Semiconductor nanorods have anisotropic absorption and emission properties. In this work a hybrid luminescent layer is produced based on a mixture of CdSe/CdS nanorods dispersed in a liquid crystal that is aligned by an electric field and polymerized by UV illumination. The film emits light with polarization ratio 0.6 (polarization contrast 4:1. Clusters of nanorods in liquid crystal can be avoided by applying an AC electric field with sufficient amplitude. This method can be made compatible with large-scale processing on flexible transparent substrates. Thin polarized light emitters can be used in LCD backlights or solar concentrators to increase the efficiency.

Electrical investigations of hybrid OLED microcavity structures with novel encapsulation methods

Science.gov (United States)

Meister, Stefan; Brückner, Robert; Fröb, Hartmut; Leo, Karl

2016-04-01

An electrical driven organic solid state laser is a very challenging goal which is so far well beyond reach. As a step towards realization, we monolithically implemented an Organic Light Emitting Diode (OLED) into a dielectric, high quality microcavity (MC) consisting of two Distributed Bragg Reectors (DBR). In order to account for an optimal optical operation, the OLED structure has to be adapted. Furthermore, we aim to excite the device not only electrically but optically as well. Different OLED structures with an emission layer consisting of Alq3:DCM (2 wt%) were investigated. The External Quantum Efficiencies (EQE) of this hybrid structures are in the range of 1-2 %, as expected for this material combination. Including metal layers into a MC is complicated and has a huge impact on the device performance. Using Transfer-Matrix-Algorithm (TMA) simulations, the best positions for the metal electrodes are determined. First, the electroluminescence (EL) of the adjusted OLED structure on top of a DBR is measured under nitrogen atmosphere. The modes showed quality factors of Q = 60. After the deposition of the top DBR, the EL is measured again and the quality factors increased up to Q = 600. Considering the two 25-nm-thick-silver contacts a Q-factor of 600 is very high. The realization of a suitable encapsulation method is important. Two approaches were successfully tested. The first method is based on the substitution of a DBR layer with a layer produced via Atomic Layer Deposition (ALD). The second method uses a 0.15-mm-thick cover glass glued on top of the DBR with a 0.23-μm-thick single-component glue layer. Due to the working encapsulation, it is possible to investigate the sample under ambient conditions.

High modulation bandwidth of a light-emitting diode with surface plasmon coupling (Conference Presentation)

Science.gov (United States)

Lin, Chun-Han; Tu, Charng-Gan; Yao, Yu-Feng; Chen, Sheng-Hung; Su, Chia-Ying; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, Chih-Chung

2017-02-01

Besides lighting, LEDs can be used for indoor data transmission. Therefore, a large modulation bandwidth becomes an important target in the development of visible LED. In this regard, enhancing the radiative recombination rate of carriers in the quantum wells of an LED is a useful method since the modulation bandwidth of an LED is related to the carrier decay rate besides the device RC time constant To increase the carrier decay rate in an LED without sacrificing its output power, the technique of surface plasmon (SP) coupling in an LED is useful. In this paper, the increases of modulation bandwidth by reducing mesa size, decreasing active layer thickness, and inducing SP coupling in blue- and green-emitting LEDs are illustrated. The results are demonstrated by comparing three different LED surface structures, including bare p-type surface, GaZnO current spreading layer, and Ag nanoparticles (NPs) for inducing SP coupling. In a single-quantum-well, blue-emitting LED with a circular mesa of 10 microns in radius, SP coupling results in a modulation bandwidth of 528.8 MHz, which is believed to be the record-high level. A smaller RC time constant can lead to a higher modulation bandwidth. However, when the RC time constant is smaller than 0.2 ns, its effect on modulation bandwidth saturates. The dependencies of modulation bandwidth on injected current density and carrier decay time confirm that the modulation bandwidth is essentially inversely proportional to a time constant, which is inversely proportional to the square-root of carrier decay rate and injected current density.

Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

Energy Technology Data Exchange (ETDEWEB)

Passmann, Regina

2008-08-15

In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

International Nuclear Information System (INIS)

Passmann, Regina

2008-01-01

In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

Scarred resonances and steady probability distribution in a chaotic microcavity

International Nuclear Information System (INIS)

Lee, Soo-Young; Rim, Sunghwan; Kim, Chil-Min; Ryu, Jung-Wan; Kwon, Tae-Yoon

2005-01-01

We investigate scarred resonances of a stadium-shaped chaotic microcavity. It is shown that two components with different chirality of the scarring pattern are slightly rotated in opposite ways from the underlying unstable periodic orbit, when the incident angles of the scarring pattern are close to the critical angle for total internal reflection. In addition, the correspondence of emission pattern with the scarring pattern disappears when the incident angles are much larger than the critical angle. The steady probability distribution gives a consistent explanation about these interesting phenomena and makes it possible to expect the emission pattern in the latter case

Biomimetic hairy surfaces as superhydrophobic highly transmissive films for optical applications (Conference Presentation)

Science.gov (United States)

Vuellers, Felix; Gomard, Guillaume; Preinfalk, Jan B.; Klampaftis, Efthymios; Worgull, Matthias; Richards, Bryce S.; Hölscher, Hendrik; Kavalenka, Maryna N.

2017-02-01

Combining high optical transmission, water-repellency and self-cleaning is of great interest for optoelectronic devices operating in outdoor conditions, such as photovoltaics where shading can significantly reduce the power output. The surface of water plant Pistia stratiotes combines these functionalities through a dense layer of transparent microhairs. It renders the surface superhydrophobic without affecting absorption of sunlight necessary for photosynthesis. Inspired by this surface, we fabricated a superhydrophobic flexible thin nanofur film made from optical grade polycarbonate using a scalable combination of hot embossing and hot pulling techniques. During fabrication, heated sandblasted steel plates locally elongate softened polymer, thus covering its surface in microcavities surrounded by high aspect ratio micro- and nanohairs. The superhydrophobic nanofur exhibits contact angles of (166+/-6°), low sliding angles (drops below 4% when coated on a polymeric substrate, which can enhance light extraction in organic light emitting diodes (OLEDs). We report an increase of more than 10% in luminous efficacy for a nanofur coated OLED compared to a bare device. Finally, the nanofur film can be used for enhancing the incoupling of light to solar cells, while additionally providing self-cleaning properties. Optical coupling of the nanofur to a multi-crystalline silicon solar cell results in a 5.8% gain in photocurrent compared to a bare device under normal incidence.

Solid state radiative heat pump

Science.gov (United States)

Berdahl, P.H.

1984-09-28

A solid state radiative heat pump operable at room temperature (300 K) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of change carriers as compared equilibrium. In one form of the invention an infrared semiconductor photodiode is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention, a homogenous semiconductor is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation the active surface of the semiconductor are disclosed. In one method, an anti-refection layer is coated into the active surface of the semiconductor, the anti-reflection layer having an index of refraction equal to the square root of that of the semiconductor. In the second method, a passive layer is speaced trom the active surface of the semiconductor by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler with a paraboloid reflecting surface surface is in contact with the active surface of the semiconductor, the coupler having an index of refraction about the same as that of the semiconductor.

Charge transport in organic semiconductors.

Science.gov (United States)

Bässler, Heinz; Köhler, Anna

2012-01-01

Modern optoelectronic devices, such as light-emitting diodes, field-effect transistors and organic solar cells require well controlled motion of charges for their efficient operation. The understanding of the processes that determine charge transport is therefore of paramount importance for designing materials with improved structure-property relationships. Before discussing different regimes of charge transport in organic semiconductors, we present a brief introduction into the conceptual framework in which we interpret the relevant photophysical processes. That is, we compare a molecular picture of electronic excitations against the Su-Schrieffer-Heeger semiconductor band model. After a brief description of experimental techniques needed to measure charge mobilities, we then elaborate on the parameters controlling charge transport in technologically relevant materials. Thus, we consider the influences of electronic coupling between molecular units, disorder, polaronic effects and space charge. A particular focus is given to the recent progress made in understanding charge transport on short time scales and short length scales. The mechanism for charge injection is briefly addressed towards the end of this chapter.

Rational design of organic semiconductors for texture control and self-patterning on halogenated surfaces

KAUST Repository

Ward, Jeremy W.

2014-05-15

Understanding the interactions at interfaces between the materials constituting consecutive layers within organic thin-film transistors (OTFTs) is vital for optimizing charge injection and transport, tuning thin-film microstructure, and designing new materials. Here, the influence of the interactions at the interface between a halogenated organic semiconductor (OSC) thin film and a halogenated self-assembled monolayer on the formation of the crystalline texture directly affecting the performance of OTFTs is explored. By correlating the results from microbeam grazing incidence wide angle X-ray scattering (μGIWAXS) measurements of structure and texture with OTFT characteristics, two or more interaction paths between the terminating atoms of the semiconductor and the halogenated surface are found to be vital to templating a highly ordered morphology in the first layer. These interactions are effective when the separating distance is lower than 2.5 dw, where dw represents the van der Waals distance. The ability to modulate charge carrier transport by several orders of magnitude by promoting "edge-on" versus "face-on" molecular orientation and crystallographic textures in OSCs is demonstrated. It is found that the "edge-on" self-assembly of molecules forms uniform, (001) lamellar-textured crystallites which promote high charge carrier mobility, and that charge transport suffers as the fraction of the "face-on" oriented crystallites increases. The role of interfacial halogenation in mediating texture formation and the self-patterning of organic semiconductor films, as well as the resulting effects on charge transport in organic thin-film transistors, are explored. The presence of two or more anchoring sites between a halogenated semiconductor and a halogenated self-assembled monolayer, closer than about twice the corresponding van der Waals distance, alter the microstructure and improve electrical properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

DEFF Research Database (Denmark)

Larsson, David; Greve, Anders; Hvam, Jørn Märcher

2009-01-01

We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power...... and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was 60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed....

Molecular-scale shear response of the organic semiconductor β -DBDCS (100) surface

Science.gov (United States)

Álvarez-Asencio, Rubén; Moreno-Ramírez, Jorge S.; Pimentel, Carlos; Casado, Santiago; Matta, Micaela; Gierschner, Johannes; Muccioli, Luca; Yoon, Seong-Jun; Varghese, Shinto; Park, Soo Young; Gnecco, Enrico; Pina, Carlos M.

2017-09-01

In this work we present friction-force microscopy (FFM) lattice-resolved images acquired on the (100) facet of the semiconductor organic oligomer (2 Z ,2'Z )-3 , 3' -(1,4-phenylene)bis(2-(4-butoxyphenyl)acrylonitrile) (β -DBDCS) crystal in water at room temperature. Stick-slip contrast, lateral contact stiffness, and friction forces are found to depend strongly on the sliding direction due to the anisotropic packing of the molecular chains forming the crystal surface along the [010] and [001] directions. The anisotropy also causes the maximum value of the normal force applicable before wearing to increase by a factor of 3 when the scan is performed along the [001] direction on the (100) face. Altogether, our results contribute to achieving a better understanding of the molecular origin of friction anisotropy on soft crystalline surfaces, which has been often hypothesized but rarely investigated in the literature.

Influence of evaporation conditions of Alq3 on the performance of organic light emitting diodes

International Nuclear Information System (INIS)

Zhang Fujun; Xu Zheng; Zhao Dewei; Zhao Suling; Jiang Weiwei; Yuan Guangcai; Song Dandan; Wang Yongsheng; Xu Xurong

2007-01-01

The influence of evaporation conditions of organic semiconductor material tris(8-hydroxyquinoline)aluminium (Alq 3 ) on the performance of organic light emitting diodes (OLEDs) is reported. In the process of organic material thermal evaporation, the chamber was dark or had white light from a 100 W filament lamp. The devices prepared in the dark show higher emission intensity and efficiency compared with the ones prepared in white light under the same driving voltage. Atomic force microscopy measurements show that surface morphology and phase of Alq 3 thin films are quite different for the previous cases. The different evaporation conditions are found to have direct effects on the electrical and luminance performance. The Alq 3 thin films prepared in the dark as active emission layers of OLEDs show higher intensity and efficiency

Chemical Modification of Semiconductor Surfaces for Molecular Electronics.

Science.gov (United States)

Vilan, Ayelet; Cahen, David

2017-03-08

Inserting molecular monolayers within metal/semiconductor interfaces provides one of the most powerful expressions of how minute chemical modifications can affect electronic devices. This topic also has direct importance for technology as it can help improve the efficiency of a variety of electronic devices such as solar cells, LEDs, sensors, and possible future bioelectronic ones. The review covers the main aspects of using chemistry to control the various aspects of interface electrostatics, such as passivation of interface states and alignment of energy levels by intrinsic molecular polarization, as well as charge rearrangement with the adjacent metal and semiconducting contacts. One of the greatest merits of molecular monolayers is their capability to form excellent thin dielectrics, yielding rich and unique current-voltage characteristics for transport across metal/molecular monolayer/semiconductor interfaces. We explain the interplay between the monolayer as tunneling barrier on the one hand, and the electrostatic barrier within the semiconductor, due to its space-charge region, on the other hand, as well as how different monolayer chemistries control each of these barriers. Practical tools to experimentally identify these two barriers and distinguish between them are given, followed by a short look to the future. This review is accompanied by another one, concerning the formation of large-area molecular junctions and charge transport that is dominated solely by molecules.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

International Nuclear Information System (INIS)

Deri, R.J.

2011-01-01

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

Detection of protein kinases P38 based on reflectance spectroscopy with n-type porous silicon microcavities for diagnosing hydatidosis hydatid disease

Science.gov (United States)

Lv, Xiaoyi; Lv, Guodong; Jia, Zhenhong; Wang, Jiajia; Mo, Jiaqing

2014-11-01

Detection of protein kinases P38 of Echinococcus granulosus and its homologous antibody have great value for early diagnosis and treatment of hydatidosis hydatid disease. In this experiment, n-type mesoporous silicon microcavities have been successfully fabricated without KOH etching or oxidants treatment that reported in other literature. We observed the changes of the reflectivity spectrum before and after the antigen-antibody reaction by n-type mesoporous silicon microcavities. The binding of protein kinases P38 and its homologous antibody causes red shifts in the reflection spectrum of the sensor, and the red shift was proportional to the protein kinases P38 concentration with linear relationship.

Liquid Crystalline Semiconductors Materials, properties and applications

CERN Document Server

Kelly, Stephen; O'Neill, Mary

2013-01-01

This is an exciting stage in the development of organic electronics. It is no longer an area of purely academic interest as increasingly real applications are being developed, some of which are beginning to come on-stream. Areas that have already been commercially developed or which are under intensive development include organic light emitting diodes (for flat panel displays and solid state lighting), organic photovoltaic cells, organic thin film transistors (for smart tags and flat panel displays) and sensors. Within the family of organic electronic materials, liquid crystals are relative newcomers. The first electronically conducting liquid crystals were reported in 1988 but already a substantial literature has developed. The advantage of liquid crystalline semiconductors is that they have the easy processability of amorphous and polymeric semiconductors but they usually have higher charge carrier mobilities. Their mobilities do not reach the levels seen in crystalline organics but they circumvent all of t...

Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

Directory of Open Access Journals (Sweden)

Konrad Maier

2015-09-01

Full Text Available In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

Selective photochemical dry etching of compound semiconductors

International Nuclear Information System (INIS)

Ashby, C.I.H.

1988-01-01

When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

Quantum confined laser devices optical gain and recombination in semiconductors

CERN Document Server

Blood, Peter

2015-01-01

The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

III-nitride based light emitting diodes and applications

CERN Document Server

Han, Jung; Amano, Hiroshi; Morkoç, Hadis

2013-01-01

Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on th...

The theory of surface-enhanced Raman scattering on semiconductor nanoparticles; toward the optimization of SERS sensors.

Science.gov (United States)

Lombardi, John R

2017-12-04

We present an expression for the lowest order nonzero contribution to the surface-enhanced Raman spectrum obtained from a system of a molecule adsorbed on a semiconductor nanoparticle. Herzberg-Teller vibronic coupling of the zero-order Born-Oppenheimer states results in an expression which may be regarded as an extension of the Albrecht A-, B-, and C-terms to SERS substrates. We show that the SERS enhancement is caused by combinations of several types of resonances in the combined system, namely, surface, exciton, charge-transfer, and molecular resonances. These resonances are coupled by terms in the numerator, which provide selection rules that enable various tests of the theory and predict the relative intensities of the Raman lines. Furthermore, by considering interactions of the various contributions to the SERS enhancement, we are able to develop ways to optimize the enhancement factor by tailoring the semiconductor nanostructure, thereby adjusting the locations of the various contributing resonances. This provides a procedure by which molecular sensors can be constructed and optimized. We provide several experimental examples on substrates such as monolayer MoS 2 and GaN nanorods.

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

Science.gov (United States)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

Room temperature triplet state spectroscopy of organic semiconductors.

Science.gov (United States)

Reineke, Sebastian; Baldo, Marc A

2014-01-21

Organic light-emitting devices and solar cells are devices that create, manipulate, and convert excited states in organic semiconductors. It is crucial to characterize these excited states, or excitons, to optimize device performance in applications like displays and solar energy harvesting. This is complicated if the excited state is a triplet because the electronic transition is 'dark' with a vanishing oscillator strength. As a consequence, triplet state spectroscopy must usually be performed at cryogenic temperatures to reduce competition from non-radiative rates. Here, we control non-radiative rates by engineering a solid-state host matrix containing the target molecule, allowing the observation of phosphorescence at room temperature and alleviating constraints of cryogenic experiments. We test these techniques on a wide range of materials with functionalities spanning multi-exciton generation (singlet exciton fission), organic light emitting device host materials, and thermally activated delayed fluorescence type emitters. Control of non-radiative modes in the matrix surrounding a target molecule may also have broader applications in light-emitting and photovoltaic devices.

Device Physics of Narrow Gap Semiconductors

CERN Document Server

Chu, Junhao

2010-01-01

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

Manipulating semiconductor colloidal stability through doping.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

6th Trieste IUPAP-ICTP Semiconductor Symposium : Festschrift Harbeke (Günther)

CERN Document Server

Stutzmann, M

1991-01-01

Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces

Zinc Alloys for the Fabrication of Semiconductor Devices

Science.gov (United States)

Ryu, Yungryel; Lee, Tae S.

2009-01-01

ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and

Simulation and Performance Test Technology Development for Semiconductor Radiation Detection Instrument Fabrication

International Nuclear Information System (INIS)

Kim, Jong Kyung; Lee, W. G.; Kim, S. Y.; Shin, C. H.; Kim, K. O.; Park, J. M.; Jang, D. Y.; Kang, J. S.

2010-06-01

- Analysis on the Absorbed Dose and Electron Generation by Using MCNPX Code - Analysis on the Change of Measured Energy Spectrum As a Function of Bias Voltage Applied in Semiconductor Detector - Comparison of Monte Carlo Simulation Considering the Charge Collection Efficiency and Experimental Result - Development of Semiconductor Sensor Design Code Based on the Graphic User Interface - Analysis on Depth Profile of Ion-implanted Semiconductor Wafer Surface and Naturally Generated SiO2 Insulation Layer Using Auger Electron Spectroscopy - Measurement of AFM Images and Roughness to Abalyze Surface of Semiconductor Wafer with respect to Annealing and Cleaning Process - Measurement of Physical Properties for Semiconductor Detector Surface after CZT Passivation Process - Evaluation of Crystal Structure and Specific Resistance of CZT - Measurement/Analysis on Band Structure of CZT Crystal - Evaluation of Neutron Convertor Layer with respect to Change in Temperature - Measurement/Evaluation of physical characteristics for lattice parameter, specific resistance, and band structure of CZT crystal - Measurement/Evaluation of lattice transition of SiC semiconductor detector after radiation irradiation - Measurement/Evaluation of performance of semiconductor detector with respect to exposure in high temperature environment

Continuous-wave optically pumped green perovskite vertical-cavity surface-emitter

KAUST Repository

Alias, Mohd Sharizal; Liu, Zhixiong; Alatawi, Abdullah; Ng, Tien Khee; Wu, Tao; Ooi, Boon S.

2017-01-01

We report an optically pumped green perovskite vertical-cavity surface-emitter operating in continuous-wave (CW) with a power density threshold of ~89 kW/cm2. The device has an active region of CH3NH3PbBr3 embedded in a dielectric microcavity

Effects of emitted electron temperature on the plasma sheath

International Nuclear Information System (INIS)

Sheehan, J. P.; Kaganovich, I. D.; Wang, H.; Raitses, Y.; Sydorenko, D.; Hershkowitz, N.

2014-01-01

It has long been known that electron emission from a surface significantly affects the sheath surrounding that surface. Typical fluid theory of a planar sheath with emitted electrons assumes that the plasma electrons follow the Boltzmann relation and the emitted electrons are emitted with zero energy and predicts a potential drop of 1.03T e /e across the sheath in the floating condition. By considering the modified velocity distribution function caused by plasma electrons lost to the wall and the half-Maxwellian distribution of the emitted electrons, it is shown that ratio of plasma electron temperature to emitted electron temperature significantly affects the sheath potential when the plasma electron temperature is within an order of magnitude of the emitted electron temperature. When the plasma electron temperature equals the emitted electron temperature the emissive sheath potential goes to zero. One dimensional particle-in-cell simulations corroborate the predictions made by this theory. The effects of the addition of a monoenergetic electron beam to the Maxwellian plasma electrons were explored, showing that the emissive sheath potential is close to the beam energy only when the emitted electron flux is less than the beam flux

The Effects of Surface Reconstruction and Electron-Positron Correlation on the Annihilation Characteristics of Positrons Trapped at Semiconductor Surfaces

International Nuclear Information System (INIS)

Fazleev, N. G.; Jung, E.; Weiss, A. H.

2009-01-01

Experimental positron annihilation induced Auger electron spectroscopy (PAES) data from Ge(100) and Ge(111) surfaces display several strong Auger peaks corresponding to M 4,5 N 1 N 2,3 , M 2,3 M 4,5 M 4,5 , M 2,3 M 4,5 V, and M 1 M 4,5 M 4,5 Auger transitions. The integrated peak intensities of Auger transitions have been used to obtain experimental annihilation probabilities for the Ge 3d and 3p core electrons. The experimental data were analyzed by performing theoretical studies of the effects of surface reconstructions and electron-positron correlations on image potential induced surface states and annihilation characteristics of positrons trapped at the reconstructed Ge(100) and Ge(111) surfaces. Calculations of positron surface states and annihilation characteristics have been performed for Ge(100) surface with (2x1), (2x2), and (4x2) reconstructions, and for Ge(111) surface with c(2x8) reconstruction. Estimates of the positron binding energy and annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of the semiconductor and to the approximations used to describe electron-positron correlations. The results of these theoretical studies are compared with the ones obtained for the reconstructed Si(100)-(2x1) and Si(111)-(7x7) surfaces.

Dilute nitride vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Jouhti, T; Okhotnikov, O; Konttinen, J; Gomes, L A; Peng, C S; Karirinne, S; Pavelescu, E-M; Pessa, M

2003-01-01

A novel quaternary compound semiconductor material, Ga 1-x In x N y As 1-y (0 0.65 In 0.35 N 0.014 As 0.986 /GaAs quantum wells with special strain-mediating layers. The laser characterization was carried out by using a fibre pigtailed 980 nm pump laser diode, 980/1300 nm wavelength division multiplexer and an optical spectrum analyser. A high optical output power of 3.5 mW was coupled lenslessly into a standard single-mode fibre

The history of laser conditions in semiconductors

International Nuclear Information System (INIS)

Bernard, Maurice

2012-01-01

Fifty years ago, summer 1962: in three independent laboratories of the US East Coast, almost simultaneously, IR coherent light was for the first time emitted from semiconductor crystals. No theory was associated with these results. Two years before, Georges Duraffourg and Maurice Bernard had readily proved that for such phenomenon to occur requires that a relation is fulfilled between quasi-Fermi levels and photon energy: F n − F p > hν. This paper presents an overview of this important period of history and the events that occurred around that time. (paper)

New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

Directory of Open Access Journals (Sweden)

Andre F. S. Guedes

2014-06-01

Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

α-particle shielding of semiconductor device

International Nuclear Information System (INIS)

McKeown, P.J.A.; Perry, J.P.; Waddell, J.M.; Barker, K.D.

1981-01-01

Soft errors in semiconductor devices, e.g. random access memories, arising from the bombardment of the device by alpha particles produced by the disintegration of minute traces of uranium or thorium in the packaging materials are prevented by coating the active surface of the semiconductor chip with a thin layer, e.g. 20 to 100 microns of an organic polymeric material, this layer being of sufficient thickness to absorb the particles. Typically, the polymer is a poly-imide formed by u.v. electron-beam or thermal curing of liquid monomer applied to the chip surface. (author)

Continuous-wave optically pumped green perovskite vertical-cavity surface-emitter

KAUST Repository

Alias, Mohd Sharizal

2017-09-11

We report an optically pumped green perovskite vertical-cavity surface-emitter operating in continuous-wave (CW) with a power density threshold of ~89 kW/cm2. The device has an active region of CH3NH3PbBr3 embedded in a dielectric microcavity; this feat was achieved with a combination of optimal spectral alignment of the optical cavity modes with the perovskite optical gain, an adequate Q-factor of the microcavity, adequate thermal stability, and improved material quality with a smooth, passivated, and annealed thin active layer. Our results signify a way towards efficient CW perovskite emitter operation and electrical injection using low-cost fabrication methods for addressing monolithic optoelectronic integration and lasing in the green gap.

Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

Science.gov (United States)

Larsson, David; Greve, Anders; Hvam, Jørn M.; Boisen, Anja; Yvind, Kresten

2009-03-01

We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was ˜60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed.

Thermally controlled growth of surface nanostructures on ion-modified AIII-BV semiconductor crystals

Science.gov (United States)

Trynkiewicz, Elzbieta; Jany, Benedykt R.; Wrana, Dominik; Krok, Franciszek

2018-01-01

The primary motivation for our systematic study is to provide a comprehensive overview of the role of sample temperature on the pattern evolution of several AIII-BV semiconductor crystal (001) surfaces (i.e., InSb, InP, InAs, GaSb) in terms of their response to low-energy Ar+ ion irradiation conditions. The surface morphology and the chemical diversity of such ion-modified binary materials has been characterized by means of scanning electron microscopy (SEM). In general, all surface textures following ion irradiation exhibit transitional behavior from small islands, via vertically oriented 3D nanostructures, to smoothened surface when the sample temperature is increased. This result reinforces our conviction that the mass redistribution of adatoms along the surface plays a vital role during the formation and growth process of surface nanostructures. We would like to emphasize that this paper addresses in detail for the first time the topic of the growth kinetics of the nanostructures with regard to thermal surface diffusion, while simultaneously offering some possible approaches to supplementing previous studies and therein gaining a new insight into this complex issue. The experimental results are discussed with reference to models of the pillars growth, abutting on preferential sputtering, the self-sustained etch masking effect and the redeposition process recently proposed to elucidate the observed nanostructuring mechanism.

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications

International Nuclear Information System (INIS)

Wellman, P; Syväjärvi, M; Ou, H

2014-01-01

understanding the device performance. In relation to these, the surface pre-treatment and deposition technique can influence the reliability and electric field durability of the system, and relate to interface and near interface regions between the dielectric and semiconductor which can host electronic defects which change the surface potential, reduces mobility and enhance the recombination of charge carriers. At the end, materials for energy savings are critically needed. At the symposium ''Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications'', held at the E-MRS 2013 Spring meeting, 27–31 May, 2013 Strasbourg, France, a variety of concepts were presented. In this publication, a selection is presented that represents a range of issues from materials to reliability processing to system approaches. Acknowledgements: Technical support during preparation of the symposium program and proceedings by Saskia Schimmel is greatly acknowledged

fdtd Semiconductor Microlaser Simulator v. 2.0

Energy Technology Data Exchange (ETDEWEB)

2009-01-29

This software simulates the transient optical response of a system of in-plane semiconductor lasers/waveguides of almost arbitrary 2D complexity using the effective index approximation. Gain is calculated by solving a 3D transport equation from an arbitrary contact geometry and epi structure to get an input current density to the active region, followed by a diffusion equation for carriers in that layer. The gain is saturable and frequency dependent so that output powers and frequency spectrum/longitudinal modes are predicted. Solution is by the finite-difference time-domain method on a 2D triangular grid, so that propagation in any direction along the epi plan is allowed, and arbitrary laser/waveguide shapes can be modeled, including rings. Runtime considerations, however, limit the practical solution region to approximately 500 microns**2 so that the applicability of this code is primarily limited to micro-resinators. Modeling of standard-edge-emitting semiconductor lasers is better accomplished using algorithms based on bi-directional beam propagation.

Electrothermal Simulation of Large-Area Semiconductor Devices

Directory of Open Access Journals (Sweden)

C Kirsch

2017-06-01

Full Text Available The lateral charge transport in thin-film semiconductor devices is affected by the sheet resistance of the various layers. This may lead to a non-uniform current distribution across a large-area device resulting in inhomogeneous luminance, for example, as observed in organic light-emitting diodes (Neyts et al., 2006. The resistive loss in electrical energy is converted into thermal energy via Joule heating, which results in a temperature increase inside the device. On the other hand, the charge transport properties of the device materials are also temperature-dependent, such that we are facing a two-way coupled electrothermal problem. It has been demonstrated that adding thermal effects to an electrical model significantly changes the results (Slawinski et al., 2011. We present a mathematical model for the steady-state distribution of the electric potential and of the temperature across one electrode of a large-area semiconductor device, as well as numerical solutions obtained using the finite element method.

Physics and Chemistry on Well-Defined Semiconductor and Oxide Surfaces

Science.gov (United States)

Chen, Peijun

High resolution electron energy loss spectroscopy (HREELS) and other surface spectroscopic techniques have been employed to investigate the following two classes of surface/interface phenomena on well-defined semiconductor and oxide surfaces: (i) the fundamental physical and chemical processes involved in gas-solid interaction on silicon single crystal surfaces, and (ii) the physical and chemical properties of metal-oxide interfaces. The particular systems reported in this dissertation are: NH_3, PH_3 and B_ {10}H_{14} on Si(111)-(7 x 7); NH_3 on Si(100) -(2 x 1); atomic H on Si(111)-(7 x 7) and boron-modified Si(111); Al on Al_2O_3 and Sn on SiO_2.. On silicon surfaces, the surface dangling bonds function as the primary adsorption sites where surface chemical processes take place. The unambiguous identification of surface species by vibrational spectroscopy allows the elementary steps involved in these surface chemical processes to be followed on a molecular level. For adsorbate molecules such as NH_3 and PH_3, the nature of the initial low temperature (100 -300 K) adsorption is found to be dissociative, while that for B_{10}H_ {14} is non-dissociative. This has been deduced based upon the presence (or absence) of specific characteristic vibrational mode(s) on surface. By following the evolution of surface species as a function of temperature, the elementary steps leading to silicon nitride thin film growth and doping of silicon are elucidated. In the case of NH_3 on Si(111)-(7 x 7) and Si(100)-(2 x 1), a detailed understanding on the role of substrate surface structure in controlling the surface reactivity has been gained on the basis of a Si adatom backbond-strain relief mechanism on the Si(111) -(7 x 7). The electronic modification to Si(111) surface by subsurface boron doping has been shown to quench its surface chemistry, even for the most aggressive atomic H. This discovery is potentially meaningful to the technology of gas-phase silicon etching. The

All-inorganic white light emitting devices based on ZnO nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Nannen, Ekaterina

2012-09-21

Semiconductor nanaocrystals (NCs) are very promising candidates for lightweight large-area rollable displays and light emitting devices (LEDs). They are expected to combine the efficiency, robustness and color tunability of conventional semiconductor LEDs with the flexible fabrication techniques known from OLED technology, since the NCs are compatible with solution processing and therefore can be deposited on virtually any substrates including glass and plastic. Today, NC-LEDs consist of chemically synthesized QDs embedded in organic charge injection and transport layers. The organic layers limit the robustness of the NC-LEDs and result in significant constrictions within the device fabrication procedure, such as organic evaporation steps, inert (i.e. humidity and oxygen free) atmosphere and obligatory encapsulation. These limitations during the production process as well as complex chemical synthesis route of the implemented NCs and organic components lead to high fabrication costs and low turnover. So far, only prototype devices have been introduced by several research groups and industrial companies. Still, the main concern retarding NC-LEDs from market launch is the high content of toxic heavy metals like Cd in the active nanocrystalline light emitting material. Within this work, possible environmentally safe and ambient-air-compatible alternatives to conventional QDs and organics were explored, with the main focus on design and fabrication of completely inorganic white NC-LEDs with commercial ZnO nanoparticles as an active light emitting material. While the electrical transport properties through the NC-network of the commercially available VP AdNano {sup registered} ZnO2O particles were already to some extent explored, their optical properties and therefore suitability as an active light emitter in NC-LEDs were not studied so far. (orig.)

Luminescence and squeezing of a superconducting light-emitting diode

Science.gov (United States)

Hlobil, Patrik; Orth, Peter P.

2015-05-01

We investigate a semiconductor p -n junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a sharp frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence that results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. We show that the squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This reveals how the macroscopic coherence of a superconductor can be used to control the properties of light.

Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

Energy Technology Data Exchange (ETDEWEB)

Arto V. Nurmikko; Jung Han