WorldWideScience

Sample records for semiconductor surface preparation

  1. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    Paul C. McIntyre

    2012-07-01

    Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  2. Influence of semiconductor surface preparation on photoelectric properties of Al-Zn{sub 3}P{sub 2} contacts

    Energy Technology Data Exchange (ETDEWEB)

    Mirowska, Nella [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)]. E-mail: nella.mirowska@pwr.wroc.pl; Misiewicz, Jan [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2006-06-15

    The Schottky barriers formed by Al on Zn{sub 3}P{sub 2} p-type crystals have been studied. Three types of crystals (monocrystal, large-grain crystal and polycrystal) were used for device fabrication. The samples were separated in two groups according to the type of structure and the methods of surface preparation. The samples from the first group were different in structure (monocrystal, large-grain crystal and polycrystals) but prepared in the same way. Three polycrystals with differently prepared surfaces were collected in the second group. Two samples from this group were also annealed in open air at 523 K for 24 h. Measurements of photovoltaic effect at room temperature were carried out to test the impact of surface preparation on photoelectric properties of Al-Zn{sub 3}P{sub 2} contacts. Substantial differences in shape and intensity of PV signal were observed depending on whether the surface of semiconductor was mechanically polished, chemically etched or/and heat treated. The height of potential barrier, {phi} {sub B}, and optical transitions in semiconductor were determined. The value of {phi} {sub B} changed from 0.747 to 0.767 eV for unheated samples and from 0.724 to 0.755 eV for the heated ones. The quality of semiconductor surface seems to have an essential influence on spectral characteristics of Al-Zn{sub 3}P{sub 2} junctions, especially in the case of polycrystals. It appeared that thorough preliminary mechanical polishing of crystals surface provides quite good photoelectric properties of Al-Zn{sub 3}P{sub 2} junctions.

  3. III-V semiconductors for photoelectrochemical applications: surface preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Fertig, Dominic; Schaechner, Birgit; Calvet, Wofram; Kaiser, Bernhard; Jaegermann, Wolfram [TU Darmstadt, Fachbereich Materialwissenschaft, Fachgebiet Oberflaechenforschung (Germany)

    2011-07-01

    III-V semiconductors are promising reference systems for photoelectrochemical energy conversion. Therefore we have studied the influence of different acids and acidic solutions on the etching of p-doped gallium-arsenide and gallium-phosphide single crystal surfaces. From our experiments we conclude, that etching with HCl and subsequent annealing up to 450 C gives the best results for the removal of the carbonates and the oxides without affecting the quality of the sample. By treating the surfaces with ''piranha''-solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O/7:2:1), the creation of an oxide layer with well defined thickness can be achieved. For the creation of an efficient photoelectrochemical cell, Pt nanoparticles have been deposited from solution. These surfaces are then characterized by photoelectron spectroscopy and AFM. Further electrochemical measurements try to correlate the effect of the surface cleaning and the Pt deposition on the photoactivity of the GaAs- and GaP-semiconductors.

  4. A comparative study on surface morphology from the HgI2 semiconductors prepared by different techniques

    International Nuclear Information System (INIS)

    Martins, Joao F.T.; Ferraz, Caue de M.; Santos, Robinson A. dos; Mesquita, Carlos H. de; Hamada, Margarida M.

    2013-01-01

    The impurity effect in the surface morphology quality of HgI 2 crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detector. The crystals were purified and grown by two techniques: (1) physical vapor transport (PVT) and (2) saturated solution from dimethylsulfoxide (DMSO) complexes. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. The best quality of surface morphology was found for the crystals purified and grown by the PVT technique. Significant decrease in the impurity concentration was found, purifying the crystal by means of two successive growths by the PVT technique, while a Si contamination in the HgI 2 crystal was observed, during its growth by the DMSO method. Thus, for DMSO technique was not possible to identify the peaks of the other trace elements present as impurities in the PVT crystal, due to the high intensity of the Si peak in the DMSO crystal. It was demonstrated the impurities affect significantly the surface morphology quality from the HgI 2 crystal. Key Words: Semiconductor crystal, Radiation detector, Mercury Iodide crystal, surface morphology. (author)

  5. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  6. Surface passivation process of compound semiconductor material using UV photosulfidation

    Science.gov (United States)

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  7. Surface preparation of niobium

    International Nuclear Information System (INIS)

    Kneisel, P.

    1980-01-01

    Any discussion of surface preparation for superconducting rf-surfaces is certainly connected with the question what is the best recipe for achieving high Q-values and high break-down fields. Since the break-down in a cavity is not understood so far and because several mechanisms play a role, it also is not possible to give one recipe which always works. Nevertheless in the past certain preparation techniques for niobium surfaces have been developed and certain rules for preparation can be applied. In the following the to-days state of the art will be described and it is attempted to give a short description of the surface in conjunction with the methods of surface treatments, which generally can be applied to niobium cavities. (orig./WTR)

  8. Effects of ion sputtering on semiconductor surfaces

    International Nuclear Information System (INIS)

    McGuire, G.E.

    1978-01-01

    Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

  9. KMC Simulation of Surface Growth of Semiconductors

    International Nuclear Information System (INIS)

    Esen, M.

    2004-01-01

    In this work we have studied the growth and equilibration of semiconductor surfaces consisting of monoatomic steps separated by flat terraces using kinetic Monte Carlo method. Atomistic processes such as diffusion on terraces, attachment/detachment particles to/from step edges, attachment of particles from an upper terrace to a bounding step, diffusion of particles along step edges are considered. A rate equation for each, these processes is written and the overall transition probabilities are calculated where processes are ordered to make the distinction between slow and fast processes Iractal The interaction of steps is also included in the calculation of rate equations. The growth of such a surface is simulated when there is a particle flux to the surface. The rough of the surface and its dependence on both temperature and kinetic parameters such edge diffusion barrier are investigated. The formation of islands on terraces is prohibited and the distribution of their number and sizes are investigated as a function of temperature and appropriate kinetic parameters. In the absence of a flux to the surface, the equilibration of the surface is investigated paying particular attention to the top of the profile when the initial surface is a periodic profile where parallel monoatomic steps separated by terraces. It is observed that during equilibration of the profile, the topmost step disintegrates quickly and leads to many islands on the top of the profile due to. collision and annihilation of step edges of opposite sign. The islands then quickly disintegrate due to the line tension effect and this scenario repeats itself until the surface completely flattens

  10. Theory of quasiparticle surface states in semiconductor surfaces

    International Nuclear Information System (INIS)

    Hybertsen, M.S.; Louie, S.G.

    1988-01-01

    A first-principles theory of the quasiparticle surface-state energies on semiconductor surfaces is developed. The surface properties are calculated using a repeated-slab geometry. Many-body effects due to the electron-electron interaction are represented by the electron self-energy operator including the full surface Green's function and local fields and dynamical screening effects in the Coulomb interaction. Calculated surface-state energies for the prototypical Si(111):As and Ge(111):As surfaces are presented. The calculated energies and dispersions for the occupied surface states (resonances) are in excellent agreement with recent angle-resolved photoemission data. Predictions are made for the position of empty surface states on both surfaces which may be experimentally accessible. The resulting surface state gap at Gamma-bar for Si(111):As agrees with recent scanning-tunneling-spectroscopy measurements. Comparison of the present results to eigenvalues from the local-density-functional calculation reveals substantial corrections for the gaps between empty and occupied surface states. This correction is found to depend on the character of the surface states involved

  11. Terahertz plasmonics with semiconductor surfaces and antennas

    NARCIS (Netherlands)

    Gómez Rivas, J.; Berrier, A.

    2009-01-01

    Semiconductors have a Drude-like behavior at terahertz (THz) frequencies similar to metals at optical frequencies. Narrow band gap semiconductors have a dielectric constant with a negative real component and a relatively small imaginary component. This permittivity is characteristic of noble metals

  12. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93

  13. Tunneling spectroscopy on semiconductors with a low surface state density

    OpenAIRE

    Sommerhalter, Christof; Matthes, Thomas W.; Boneberg, Johannes; Leiderer, Paul; Lux-Steiner, Martha Christina

    1997-01-01

    A detailed study of tunneling spectroscopy concerning semiconductors with a low surface state density is presented. For this purpose, I V curves under dark conditions and under illumination were measured on the (0001) van der Waals surface of a p-type WS2 single crystal, which is known to be free of intrinsic surface states. The measurements are interpreted by an analytical one-dimensional metal-insulator-semiconductor model, which shows that the presence of the finite tunneling current has ...

  14. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    International Nuclear Information System (INIS)

    Zhou, Shengqiang

    2015-01-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III–V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III–V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III–V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III–V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components. (topical review)

  15. Low-frequency active surface plasmon optics on semiconductors

    NARCIS (Netherlands)

    Gómez Rivas, J.; Kuttge, M.; Kurz, H.; Haring Bolivar, P.; Sánchez-Gil, J.A.

    2006-01-01

    A major challenge in the development of surface plasmon optics or plasmonics is the active control of the propagation of surface plasmon polaritons (SPPs). Here, we demonstrate the feasibility of low-frequency active plasmonics using semiconductors. We show experimentally that the Bragg scattering

  16. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  17. Subsurface dimerization in III-V semiconductor (001) surfaces

    DEFF Research Database (Denmark)

    Kumpf, C.; Marks, L.D.; Ellis, D.

    2001-01-01

    We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms ...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

  18. Growth of crystalline semiconductor materials on crystal surfaces

    CERN Document Server

    Aleksandrov, L

    2013-01-01

    Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physical characteristics of the processes occurring during the deposition and growth of films, the principal methods of obtaining semiconductor films and of reparing substrate surfaces on which crystalline films are grown, and the main applications of films. The second part contains data on epitaxial i

  19. Surface planarization effect of siloxane derivatives in organic semiconductor layers

    Energy Technology Data Exchange (ETDEWEB)

    Sakanoue, Kei [Center for Organic Photonics and Electronics Research, Kyushu University, Nishi-ku, Fukuoka 819-0395 (Japan); Harada, Hironobu; Ando, Kento [Department of Chemical Engineering, Graduate School of Engineering, Kyushu University, Nishi-ku, Fukuoka 819-0395 (Japan); Yahiro, Masayuki [Institute of Systems, Information Technologies and Nanotechnologies, 2-1-22, Sawara-ku, Fukuoka 814-0001 (Japan); Fukai, Jun, E-mail: jfukai@chem-eng.kyushu-u.ac.jp [Department of Chemical Engineering, Graduate School of Engineering, Kyushu University, Nishi-ku, Fukuoka 819-0395 (Japan)

    2015-12-31

    The ability of siloxane surface control additives (SCAs) to planarize organic semiconductor films with a thickness of tens of nanometers printed on indium tin oxide (ITO) surfaces with stripe-patterned bank structures using a liquid-phase method is demonstrated. Three types of SCAs with different molecular structures are examined in organic solutions of toluene, anisole and tetralin containing N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)-benzidine as a solute and typical organic semiconductor. While there is an optimum SCA and concentration for each solution, one type of SCA is comprehensively effective for all solutions. This SCA increased contact angle, which is contrary to the typical behavior of SCAs. Scanning electron microscope images of the thin films near the banks reveal that this SCA did not change the contact area between the film and substrate surface, which is related to the effectiveness of the SCA. SCAs did not affect the current–voltage characteristics of green organic light-emitting diodes, but did increase external quantum efficiencies, suggesting that SCAs can be used to improve the quality of solution-deposited films for use in optical devices. - Highlights: • Surface control additives planarize organic semiconductor films coated on surfaces. • The most effective additive increases the contact angle of solutions during drying. • The effect of additives is deduced from solutal Marangoni forces. • Additives have little effect on organic light-emitting diode performance.

  20. Surface planarization effect of siloxane derivatives in organic semiconductor layers

    International Nuclear Information System (INIS)

    Sakanoue, Kei; Harada, Hironobu; Ando, Kento; Yahiro, Masayuki; Fukai, Jun

    2015-01-01

    The ability of siloxane surface control additives (SCAs) to planarize organic semiconductor films with a thickness of tens of nanometers printed on indium tin oxide (ITO) surfaces with stripe-patterned bank structures using a liquid-phase method is demonstrated. Three types of SCAs with different molecular structures are examined in organic solutions of toluene, anisole and tetralin containing N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)-benzidine as a solute and typical organic semiconductor. While there is an optimum SCA and concentration for each solution, one type of SCA is comprehensively effective for all solutions. This SCA increased contact angle, which is contrary to the typical behavior of SCAs. Scanning electron microscope images of the thin films near the banks reveal that this SCA did not change the contact area between the film and substrate surface, which is related to the effectiveness of the SCA. SCAs did not affect the current–voltage characteristics of green organic light-emitting diodes, but did increase external quantum efficiencies, suggesting that SCAs can be used to improve the quality of solution-deposited films for use in optical devices. - Highlights: • Surface control additives planarize organic semiconductor films coated on surfaces. • The most effective additive increases the contact angle of solutions during drying. • The effect of additives is deduced from solutal Marangoni forces. • Additives have little effect on organic light-emitting diode performance.

  1. Electroless silver plating of the surface of organic semiconductors.

    Science.gov (United States)

    Campione, Marcello; Parravicini, Matteo; Moret, Massimo; Papagni, Antonio; Schröter, Bernd; Fritz, Torsten

    2011-10-04

    The integration of nanoscale processes and devices demands fabrication routes involving rapid, cost-effective steps, preferably carried out under ambient conditions. The realization of the metal/organic semiconductor interface is one of the most demanding steps of device fabrication, since it requires mechanical and/or thermal treatments which increment costs and are often harmful in respect to the active layer. Here, we provide a microscopic analysis of a room temperature, electroless process aimed at the deposition of a nanostructured metallic silver layer with controlled coverage atop the surface of single crystals and thin films of organic semiconductors. This process relies on the reaction of aqueous AgF solutions with the nonwettable crystalline surface of donor-type organic semiconductors. It is observed that the formation of a uniform layer of silver nanoparticles can be accomplished within 20 min contact time. The electrical characterization of two-terminal devices performed before and after the aforementioned treatment shows that the metal deposition process is associated with a redox reaction causing the p-doping of the semiconductor. © 2011 American Chemical Society

  2. Surface and Interface Engineering of Organometallic and Two Dimensional Semiconductor

    Science.gov (United States)

    Park, Jun Hong

    For over half a century, inorganic Si and III-V materials have led the modern semiconductor industry, expanding to logic transistor and optoelectronic applications. However, these inorganic materials have faced two different fundamental limitations, flexibility for wearable applications and scaling limitation as logic transistors. As a result, the organic and two dimensional have been studied intentionally for various fields. In the present dissertation, three different studies will be presented with followed order; (1) the chemical response of organic semiconductor in NO2 exposure. (2) The surface and stability of WSe2 in ambient air. (3) Deposition of dielectric on two dimensional materials using organometallic seeding layer. The organic molecules rely on the van der Waals interaction during growth of thin films, contrast to covalent bond inorganic semiconductors. Therefore, the morphology and electronic property at surface of organic semiconductor in micro scale is more sensitive to change in gaseous conditions. In addition, metal phthalocyanine, which is one of organic semiconductor materials, change their electronic property as reaction with gaseous analytes, suggesting as potential chemical sensing platforms. In the present part, the growth behavior of metal phthalocyanine and surface response to gaseous condition will be elucidated using scanning tunneling microscopy (STM). In second part, the surface of layered transition metal dichalcogenides and their chemical response to exposure ambient air will be investigated, using STM. Layered transition metal dichalcogenides (TMDs) have attracted widespread attention in the scientific community for electronic device applications because improved electrostatic gate control and suppression of short channel leakage resulted from their atomic thin body. To fabricate the transistor based on TMDs, TMDs should be exposed to ambient conditions, while the effect of air exposure has not been understood fully. In this part

  3. Voltammetric determination of metal impurities on semiconductor surface

    International Nuclear Information System (INIS)

    Knyazeva, E.P.; Mokrousov, G.M.; Volkova, V.N.

    1995-01-01

    A modification of voltamperometric method used for analysis of semiconductor surfaces which make it possible to exclude a contact between surface and background solution. This technique is based on solubility of elemental metal forms in low melting electroconductor systems (e.g., in mercury. The voltampere characteristics of amalgams formed are then studied. The suggested method is simple, rapid, and makes it possible to perform a nondestructive qualitative analysis of the sample surface area measuring about 10 -3 cm -2 and more. 4 refs.; 2 figs

  4. Electronic collective modes and instabilities on semiconductor surfaces. I

    International Nuclear Information System (INIS)

    Muramatsu, A.; Hanke, W.

    1984-01-01

    A Green's-function theory of electronic collective modes is presented which leads to a practical scheme for a microscopic determination of surface elementary excitations in conducting as well as nonconducting solids. Particular emphasis is placed on semiconductor surfaces where the jellium approximation is not valid, due to the importance of density fluctuations on a microscopic scale (reflected in the local-field effects). Starting from the Bethe-Salpeter equation for the two-particle Green's function of the surface system, an equation of motion for the electron-hole pair is obtained. Its solutions determine the energy spectra, lifetimes, and amplitudes of the surface elementary excitations, i.e., surface plasmons, excitons, polaritons, and magnons. Exchange and correlation effects are taken into account through the random-phase and time-dependent Hartree-Fock (screened electron-hole attraction) approximations. The formalism is applied to the study of electronic (charge- and spin-density) instabilities at covalent semiconductor surfaces. Quantitative calculations for an eight-layer Si(111) slab display an instability of the ideal paramagnetic surface with respect to spin-density waves with wavelength nearly corresponding to (2 x 1) and (7 x 7) superstructures

  5. Surface phonon polaritons in semi-infinite semiconductor superlattices

    International Nuclear Information System (INIS)

    Nkoma, J.S.

    1986-07-01

    Surface phonon polaritons in a semi-infinite semiconductor superlattice bounded by vacuum are studied. The modes associated with the polaritons are obtained and used to obtain the dispersion relation. Numerical results show that polariton bands exist between the TO and LO phonon frequencies, and are found to approach two surface mode frequencies in the limit of large tangential wave vector. Dependency of frequencies on the ratio of layer thicknesses is shown. Results are illustrated by a GaAs-GaP superlattice bounded by vacuum. (author)

  6. Reactivity of group IV (100) semiconductor surfaces towards organic compounds

    Science.gov (United States)

    Wang, George T.

    The reactions of simple and multifunctional organic compounds with the clean silicon, germanium, and diamond (100)-2 x 1 semiconductor surfaces have been investigated using a combination of multiple internal reflection infrared spectroscopy and quantum chemistry density functional theory calculations. From these studies, an improved understanding of the atomic level reactivity of these semiconductor surfaces has been obtained, along with insights into how to achieve their selective coupling with organics of desired and varied functionality. In addition to the Si(100) and Ge(100) surfaces, our results show that cycloaddition chemistry can also be extended to the diamond (100) surface. At room temperature, 1,3-butadiene was found to form a Diels-Alder product with the diamond (100) surface, as evidenced by isotopic substitution experiments and comparison of the surface adduct with its direct molecular analogue, cyclohexene. The reactions of other classes of molecules in addition to alkenes on the Si(100) and Ge(100) surfaces, including a series of five-membered cyclic amines, were also examined. For tertiary aliphatic amines on Si(100) and both secondary and tertiary aliphatic amines on Ge(100), a majority of the molecules were observed to become stably trapped in dative-bonded precursor states rather than form energetically favorable dissociation products. For pyrrole, aromaticity was found to play a defining role in its reactivity, and a comparison of its molecular and surface reactivity reveals interesting similarities. To probe the factors controlling the selectivity of organic reactions on clean semiconductor surfaces, the adsorption of acetone and a series of unsaturated ketones was also investigated. The reaction of acetone on Ge(100) was found to be under thermodynamic control at room temperature, resulting in the formation of an "ene" product rather than the kinetically favored [2+2] C=O cycloaddition product previously observed on the Si(100) surface. In

  7. Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.; Chisholm, Matthew F.

    2000-01-01

    A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

  8. Surface plasmon polariton amplification in semiconductor-graphene-dielectric structure

    Energy Technology Data Exchange (ETDEWEB)

    Dadoenkova, Yuliya S. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Novgorod State University, Veliky Novgorod (Russian Federation); Donetsk Institute for Physics and Technology, Donetsk (Ukraine); Moiseev, Sergey G. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Ulyanovsk (Russian Federation); Abramov, Aleksei S. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Kadochkin, Aleksei S.; Zolotovskii, Igor O. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Institute of Nanotechnologies of Microelectronics of the Russian Academy of Sciences, 32A Leninskiy Prosp., 119991, Moscow (Russian Federation); Fotiadi, Andrei A. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Universite de Mons (Belgium)

    2017-05-15

    A mechanism of amplification of surface plasmon polaritons due to the transfer of electromagnetic energy from a drift current wave into a far-infrared surface wave propagating along a semiconductor-dielectric boundary in waveguide geometry is proposed. A necessary condition of the interaction of these waves is phase matching condition, i. e., when the phase velocity of the surface wave approaches the drift velocity of charge carriers. It is shown that in the spectral region of the surface plasmon polariton slowing-down its amplification coefficient can reach values substantially exceeding the ohmic loss coefficient of the surface wave in the structure. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. A Initio Theoretical Studies of Surfaces of Semiconductors

    Science.gov (United States)

    Wang, Jing

    1993-01-01

    The first semiconductor which we study with these techniques is the archetypal elemental semiconductor, silicon. We present the first extensive study of point defects on Si(100). We identify the principal defects and two primary mechanisms responsible for their dominance: the need to eliminate dangling bonds on the surface and the need to compensate the strain induced by topological effects. Furthermore, we present evidence that the presence of point defects on the Si(100) surface is not intrinsic to the ground state of the surface as a stress relieving mechanism but rather is due merely to thermal fluctuations. We address materials issues associated with the identification of the lowest energy surfaces of GaAs and the determination of the geometric structure of a GaAs crystallite growing freely in three dimensions. The fracture energies associated with (110), (100) and (111) interface planes are calculated and a Wulff construction indicates that an ideal stoichiometric GaAs crystal should be terminated with (110) surfaces. We investigate the more complex issues that arise on surfaces when aspects of these two semiconductors are mixed. We investigate the problem of growing GaAs on the Si(100) surface and demonstrate how and why the most fundamental properties of the resulting bulk GaAs material, such as its crystalline orientation, may depend sensitively on the interplay between growth conditions such as temperature and the properties of the Si surface. For stepped Si(100) -As, we show that the growth of As directly on top of the Si surface produces a metastable state, while the replacement of the original top Si layer leads to a lower energy configuration, with the rearrangement of the surface driven by the relaxation of stress by surface steps. Finally, we study delta -doping, where one attempts to grow a single layer of Si on a GaAs surface before continuing with the growth of bulk GaAs. We shall employ a slightly different modality of the ab initio approach. We

  10. Micropores preparation in A3B5 semiconductors

    Czech Academy of Sciences Publication Activity Database

    Nohavica, Dušan; Gladkov, Petar; Zelinka, Jiří; Jarchovský, Zdeněk

    -, mim. číslo (2007), s. 1-16 ISSN 1335-9053. [Development of Materials Science in Research and Education . Tatranská Štrba, 10.09.2007-14.09.2007] R&D Projects: GA ČR GA202/06/1315; GA MŠk ME 834 Institutional research plan: CEZ:AV0Z20670512 Keywords : porous semiconductors * III-V semiconductors * nanoelectronics Subject RIV: BM - Solid Matter Physics ; Magnetism http://www.mtf.stuba.sk/docs//internetovy_casopis/2007/mimorcis/nohavica.pdf

  11. Self-organised wires and antiwires on semiconductor surfaces

    International Nuclear Information System (INIS)

    Srivastava, G.P.; Miwa, R.H.

    2004-01-01

    We present an overview of self-organised formation of lines of (semi)metal elements on semiconductor surfaces, together with an ab initio theoretical modelling of such quasi-one-dimensional systems. Results of calculations are presented for the atomic geometry, electronic states, and dispersion of the most tightly bound image state (IS) for a self-organised thin indium chain on the silicon surface forming the Si(1 1 1)-In(4 x 1) nanowire system. It is pointed out that strong anisotropic behaviour of the image state observed in inverse photoemission measurements originates from the anisotropy in the surface corrugation potential. Results are also presented for theoretically simulated STM images of self-organised Bi-lines on the Si(0 0 1) surface, which suggest a low density of states close to the valence band maximum localized on the Bi-lines, supporting a proposed model of a quantum antiwire system

  12. Study of surface modifications for improved selected metal (II-VI) semiconductor based devices

    Science.gov (United States)

    Blomfield, Christopher James

    Metal-semiconductor contacts are of fundamental importance to the operation of all semiconductor devices. There are many competing theories of Schottky barrier formation but as yet no quantitative predictive model exists to adequately explain metal-semiconductor interfaces. The II-VI compound semiconductors CdTe, CdS and ZnSe have recently come to the fore with the advent of high efficiency photovoltaic cells and short wavelength light emitters. Major problems still exist however in forming metal contacts to these materials with the desired properties. This work presents results which make a significant contribution to the theory of metal/II-VI interface behaviour in terms of Schottky barriers to n-type CdTe, CdS and ZnSe.Predominantly aqueous based wet chemical etchants were applied to the surfaces of CdTe, CdS and ZnSe which were subsequently characterised by X-ray photoelectron spectroscopy. The ionic nature of these II-VI compounds meant that they behaved as insoluble salts of strong bases and weak acids. Acid etchants induced a stoichiometric excess of semiconductor anion at the surface which appeared to be predominantly in the elemental or hydrogenated state. Alkaline etchants conversely induced a stoichiometric excess of semiconductor cation at the surface which appeared to be in an oxidised state.Metal contacts were vacuum-evaporated onto these etched surfaces and characterised by current-voltage and capacitance-voltage techniques. The surface preparation was found to have a clear influence upon the electrical properties of Schottky barriers formed to etched surfaces. Reducing the native surface oxide produced near ideal Schottky diodes. An extended study of Au, Ag and Sb contacts to [mathematical formula] substrates again revealed the formation of several discrete Schottky barriers largely independent of the metal used; for [mathematical formula]. Deep levels measured within this study and those reported in the literature led to the conclusion that Fermi

  13. Preparations and Characterizations of Luminescent Two Dimensional Organic-inorganic Perovskite Semiconductors

    Directory of Open Access Journals (Sweden)

    Sanjun Zhang

    2010-05-01

    Full Text Available This article reviews the synthesis, structural and optical characterizations of some novel luminescent two dimensional organic-inorganic perovskite (2DOIP semiconductors. These 2DOIP semiconductors show a self-assembled nano-layered structure, having the electronic structure of multi-quantum wells. 2DOIP thin layers and nanoparticles have been prepared through different methods. The structures of the 2DOIP semiconductors are characterized by atomic force microscopy and X-ray diffraction. The optical properties of theb DOIP semiconductors are characterized from absorption and photoluminescence spectra measured at room and low temperatures. Influences of different components, in particular the organic parts, on the structural and optical properties of the 2DOIP semiconductors are discussed.

  14. Surface passivation technology for III-V semiconductor nanoelectronics

    International Nuclear Information System (INIS)

    Hasegawa, Hideki; Akazawa, Masamichi

    2008-01-01

    The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

  15. Quasi-one-dimensional metals on semiconductor surfaces with defects

    International Nuclear Information System (INIS)

    Hasegawa, Shuji

    2010-01-01

    Several examples are known in which massive arrays of metal atomic chains are formed on semiconductor surfaces that show quasi-one-dimensional metallic electronic structures. In this review, Au chains on Si(557) and Si(553) surfaces, and In chains on Si(111) surfaces, are introduced and discussed with regard to the physical properties determined by experimental data from scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES) and electrical conductivity measurements. They show quasi-one-dimensional Fermi surfaces and parabolic band dispersion along the chains. All of them are known from STM and ARPES to exhibit metal-insulator transitions by cooling and charge-density-wave formation due to Peierls instability of the metallic chains. The electrical conductivity, however, reveals the metal-insulator transition only on the less-defective surfaces (Si(553)-Au and Si(111)-In), but not on a more-defective surface (Si(557)-Au). The latter shows an insulating character over the whole temperature range. Compared with the electronic structure (Fermi surfaces and band dispersions), the transport property is more sensitive to the defects. With an increase in defect density, the conductivity only along the metal atomic chains was significantly reduced, showing that atomic-scale point defects decisively interrupt the electrical transport along the atomic chains and hide the intrinsic property of transport in quasi-one-dimensional systems.

  16. Application of Surface Plasmonics for Semiconductor Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed

    This thesis addresses the lack of an efficient semiconductor light source at green emission colours. Considering InGaN based quantum-well (QW) light-emitters and light-emitting diodes (LEDs), various ways of applying surface plasmonics and nano-patterning to improve the efficiency, are investigated....... By placing metallic thin films or nanoparticles (NPs) in the near-field of QW light-emitters, it is possible to improve their internal quantum efficiency (IQE) through the Purcell enhancement effect. It has been a general understanding that in order to achieve surface plasmon (SP) coupling with QWs......-QW coupling does not necessarily lead to emission enhancement. The findings of this work show that the scattering and absorption properties of NPs play a crucial role in determining whether the implementation will improve or degrade the optical performance. By applying these principles, a novel design...

  17. Surface properties and photocatalytic activity of KTaO3, CdS, MoS2 semiconductors and their binary and ternary semiconductor composites.

    Science.gov (United States)

    Bajorowicz, Beata; Cybula, Anna; Winiarski, Michał J; Klimczuk, Tomasz; Zaleska, Adriana

    2014-09-24

    Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD), UV-Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), Brunauer-Emmett-Teller (BET) specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

  18. Preparative semiconductor photoredox catalysis: An emerging theme in organic synthesis

    Directory of Open Access Journals (Sweden)

    David W. Manley

    2015-09-01

    Full Text Available Heterogeneous semiconductor photoredox catalysis (SCPC, particularly with TiO2, is evolving to provide radically new synthetic applications. In this review we describe how photoactivated SCPCs can either (i interact with a precursor that donates an electron to the semiconductor thus generating a radical cation; or (ii interact with an acceptor precursor that picks up an electron with production of a radical anion. The radical cations of appropriate donors convert to neutral radicals usually by loss of a proton. The most efficient donors for synthetic purposes contain adjacent functional groups such that the neutral radicals are resonance stabilized. Thus, ET from allylic alkenes and enol ethers generated allyl type radicals that reacted with 1,2-diazine or imine co-reactants to yield functionalized hydrazones or benzylanilines. SCPC with tertiary amines enabled electron-deficient alkenes to be alkylated and furoquinolinones to be accessed. Primary amines on their own led to self-reactions involving C–N coupling and, with terminal diamines, cyclic amines were produced. Carboxylic acids were particularly fruitful affording C-centered radicals that alkylated alkenes and took part in tandem addition cyclizations producing chromenopyrroles; decarboxylative homo-dimerizations were also observed. Acceptors initially yielding radical anions included nitroaromatics and aromatic iodides. The latter led to hydrodehalogenations and cyclizations with suitable precursors. Reductive SCPC also enabled electron-deficient alkenes and aromatic aldehydes to be hydrogenated without the need for hydrogen gas.

  19. Surface electron structure of short-period semiconductor superlattice

    International Nuclear Information System (INIS)

    Bartos, I.; Czech Academy Science, Prague,; Strasser, T.; Schattke, W.

    2004-01-01

    Full text: Semiconductor superlattices represent man-made crystals with unique physical properties. By means of the directed layer-by-layer molecular epitaxy growth their electric properties can be tailored (band structure engineering). Longer translational periodicity in the growth direction is responsible for opening of new electron energy gaps (minigaps) with surface states and resonances localized at superlattice surfaces. Similarly as for the electron structure of the bulk, a procedure enabling to modify the surface electron structure of superlattices is desirable. Short-period superlattice (GaAs) 2 (AlAs) 2 with unreconstructed (100) surface is investigated in detail. Theoretical description in terms of full eigenfunctions of individual components has to be used. The changes of electron surface state energies governed by the termination of a periodic crystalline potential, predicted on simple models, are confirmed for this system. Large surface state shifts are found in the lowest minigap of the superlattice when this is terminated in four different topmost layer configurations. The changes should be observable in angle resolved photoelectron spectroscopy as demonstrated in calculations based on the one step model of photoemission. Surface state in the center of the two dimensional Brillouin zone moves from the bottom of the minigap (for the superlattice terminated by two bilayers of GaAs) to its top (for the superlattice terminated by two bilayers of AlAs) where it becomes a resonance. No surface state/resonance is found for a termination with one bilayer of AlAs. The surface state bands behave similarly in the corresponding gaps of the k-resolved section of the electron band structure. The molecular beam epitaxy, which enables to terminate the superlattice growth with atomic layer precision, provides a way of tuning the superlattice surface electron structure by purely geometrical means. The work was supported by the Grant Agency of the Academy of Sciences

  20. Preparation and characterisation of light emitting porous semiconductors

    International Nuclear Information System (INIS)

    Harris, P.J.

    1996-01-01

    Semiconducting materials exhibit electrical conductivity in the region between that of metals and insulators. The electronic properties depend upon the particular element and the level of impurities contained within it. These materials are the basis of today's electronics industry with silicon being the most important element. It was believed until recently that efficient photoluminescence in the visible region was not possible from silicon due to its relatively small, indirect band-gap (1.12 eV). For this reason semiconductors with a larger, direct band-gap such as gallium arsenide have been used for optical devices. Photoluminescence from silicon has been observed in the infrared region but this was of little use to the opto-electronics industry. However, when silicon is in the form of small nano-structures, photoluminescence can be observed in the visible region from red to blue. This photoluminescence corresponds to a shift in the band gap to between 1.5 eV and 4.5 eV. This is in accordance with the predictions of quantum mechanics for structures of this scale. Nano-structures of silicon and of other semiconductors are relatively easy to produce. Electro-chemical etching is by far the most reliable method, resulting in uniform and reproducible structures. Anodic etching in a hydrofluoric acid based etch solution results in the silicon becoming porous to a depth of the order of microns. The lateral dimensions of these porous structures are in the range of a few nanometres resulting in an aspect ratio of the order of 1000:1. These materials studied in this work have been studied with the aid of EXAFS, scanning probe microscopy and Muon spectroscopy in order to determine the local structures. Measurements of the photoluminescence intensity have been taken at the synchrotron radiation facility, (Daresbury Laboratory). These results show that the observed photoluminescence is temperature dependent. The porous silicon samples studied for this work showed

  1. TEM specimen preparation of semiconductor-PMMA-metal interfaces

    International Nuclear Information System (INIS)

    Thangadurai, P.; Lumelsky, Yulia; Silverstein, Michael S.; Kaplan, Wayne D.

    2008-01-01

    Transmission electron microscopy (TEM) cross-section specimens of PMMA in contact with gold and Si were prepared by focused ion beam (FIB) and compared with plan-view PMMA specimens prepared by a dip-coating technique. The specimens were characterized by TEM and electron energy loss spectroscopy (EELS). In the cross-section specimens, the thin films of PMMA were located in a Si-PMMA-Au multilayer. Different thicknesses of PMMA films were spin-coated on the Si substrates. The thickness of the TEM specimens prepared by FIB was estimated using EELS to be 0.65 of the plasmon mean-free-path. Along the PMMA-Au interface, Au particle diffusion into the PMMA was observed, and the size of the Au particles was in the range of 2-4 nm. Dip-coating of PMMA directly on Cu TEM grids resulted in thin specimens with a granular morphology, with a thickness of 0.58 of the plasmon mean-free-path. The dip-coated specimens were free from ion milling induced artifacts, and thus serve as control specimens for comparison with the cross-sectioned specimens prepared by FIB

  2. Preparation and characterization of Bi2S3 compound semiconductor

    Indian Academy of Sciences (India)

    microscopy (SEM) pictures indicate the presence of layer lines on the surface of crystals thereby proving that these crystals are ... Hall effect, resistivity, ther- ... 3.1 Elemental and structural characterization ... temperature range 306–403 K using dc four-probe method. ... tice vibrations is dominant scattering mechanism in this.

  3. Surface-enhanced Raman effect in hybrid metal–semiconductor nanoparticle assemblies

    International Nuclear Information System (INIS)

    Lughi, Vanni; Bonifacio, Alois; Barbone, Matteo; Marsich, Lucia; Sergo, Valter

    2013-01-01

    Hybrid metal–semiconductor nanoparticles consisting of silver nanoparticle cores (AgNPs) coated with a layer of CdSe quantum dots (QDs) have been studied by Raman spectroscopy. The hybrid nanoparticles were prepared via electrostatic interaction by mixing aqueous suspensions of QDs and AgNPs, where opposite charges on the AgNPs and QDs surfaces were induced by opportunely selected capping agents. Assemblies of such hybrid nanoparticles show an increased intensity of the Raman spectrum of up to 500 times, when compared to that of the sole QDs. This enhancement is attributed to the SERS effect (Surface-enhanced Raman scattering). Such enhancement of the Raman modes suggests several opportunities for further research, both in imaging and sensing applications.

  4. Surface-segregated monolayers: a new type of ordered monolayer for surface modification of organic semiconductors.

    Science.gov (United States)

    Wei, Qingshuo; Tajima, Keisuke; Tong, Yujin; Ye, Shen; Hashimoto, Kazuhito

    2009-12-09

    We report a new type of ordered monolayer for the surface modification of organic semiconductors. Fullerene derivatives with fluorocarbon chains ([6,6]-phenyl-C(61)-buryric acid 1H,1H-perfluoro-1-alkyl ester or FC(n)) spontaneously segregated as a monolayer on the surface of a [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) film during a spin-coating process from the mixture solutions, as confirmed by X-ray photoelectron spectroscopy (XPS). Ultraviolet photoelectron spectroscopy (UPS) showed the shift of ionization potentials (IPs) depending on the fluorocarbon chain length, indicating the formation of surface dipole moments. Surface-sensitive vibrational spectroscopy, sum frequency generation (SFG) revealed the ordered molecular orientations of the C(60) moiety in the surface FC(n) layers. The intensity of the SFG signals from FC(n) on the surface showed a clear odd-even effect when the length of the fluorocarbon chain was changed. This new concept of the surface-segregated monolayer provides a facile and versatile approach to modifying the surface of organic semiconductors and is applicable to various organic optoelectronic devices.

  5. Advancing semiconductor-electrocatalyst systems: application of surface transformation films and nanosphere lithography.

    Science.gov (United States)

    Brinkert, Katharina; Richter, Matthias H; Akay, Ömer; Giersig, Michael; Fountaine, Katherine T; Lewerenz, Hans-Joachim

    2018-05-24

    Photoelectrochemical (PEC) cells offer the possibility of carbon-neutral solar fuel production through artificial photosynthesis. The pursued design involves technologically advanced III-V semiconductor absorbers coupled via an interfacial film to an electrocatalyst layer. These systems have been prepared by in situ surface transformations in electrochemical environments. High activity nanostructured electrocatalysts are required for an efficiently operating cell, optimized in their optical and electrical properties. We demonstrate that shadow nanosphere lithography (SNL) is an auspicious tool to systematically create three-dimensional electrocatalyst nanostructures on the semiconductor photoelectrode through controlling their morphology and optical properties. First results are demonstrated by means of the photoelectrochemical production of hydrogen on p-type InP photocathodes where hitherto applied photoelectrodeposition and SNL-deposited Rh electrocatalysts are compared based on their J-V and spectroscopic behavior. We show that smaller polystyrene particle masks achieve higher defect nanostructures of rhodium on the photoelectrode which leads to a higher catalytic activity and larger short circuit currents. Structural analyses including HRSEM and the analysis of the photoelectrode surface composition by using photoelectron spectroscopy support and complement the photoelectrochemical observations. The optical performance is further compared to theoretical models of the nanostructured photoelectrodes on light scattering and propagation.

  6. On the Origin of Surface Traps in Colloidal II–VI Semiconductor Nanocrystals

    NARCIS (Netherlands)

    Houtepen, Arjan J.; Hens, Zeger; Owen, Jonathan S.; Infante, Ivan

    2017-01-01

    One of the greatest challenges in the field of semiconductor nanomaterials is to make trap-free nanocrystalline structures to attain a remarkable improvement of their optoelectronic performances. In semiconductor nanomaterials, a very high number of atoms is located on the surface and these atoms

  7. Surface Properties and Photocatalytic Activity of KTaO3, CdS, MoS2 Semiconductors and Their Binary and Ternary Semiconductor Composites

    Directory of Open Access Journals (Sweden)

    Beata Bajorowicz

    2014-09-01

    Full Text Available Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD, UV-Vis diffuse reflectance spectroscopy (DRS, scanning electron microscopy (SEM, Brunauer–Emmett–Teller (BET specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

  8. Preparation of ZnS semiconductor nanocrystals using pulsed laser ablation in aqueous surfactant solutions

    International Nuclear Information System (INIS)

    Choi, S-H; Sasaki, T; Shimizu, Y; Yoon, J-W; Nichols, W T; Sung, Y-E; Koshizaki, N

    2007-01-01

    Cubic ZnS semiconductor nanocrystals with the size of 2 to 5 nm were prepared by pulsed laser ablation in aqueous surfactant solutions of sodium dodecyl sulfate and cetyltrimethylammonium bromide without any further treatments. The obtained suspensions of the nanocrystals have broad photoluminescence emission from 375 to 600 nm. The abundance and emission intensity of the nanocrystals depend on the concentration of the surfactant in solution

  9. Electronic Properties of Metallic Nanoclusters on Semiconductor Surfaces: Implications for Nanoelectronic Device Applications

    International Nuclear Information System (INIS)

    Lee, Takhee; Liu Jia; Chen, N.-P.; Andres, R.P.; Janes, D.B.; Reifenberger, R.

    2000-01-01

    We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both the realization of well-controlled interfaces at the nanoscale and the ability to adequately characterize their electrical properties. Imaging by scanning tunneling microscopy as well as electrical characterization by current-voltage spectroscopy enable the study of the electrical properties of nanoclusters/semiconductor systems at the nanoscale. As an example of the low-resistance interfaces that can be realized, low-resistance nanocontacts consisting of metal nanoclusters deposited on specially designed ohmic contact structures are described. To illustrate a possible path to employing metal/semiconductor nanostructures in nanoelectronic applications, we also describe the fabrication and performance of uniform 2-D arrays of such metallic clusters on semiconductor substrates. Using self-assembly techniques involving conjugated organic tether molecules, arrays of nanoclusters have been formed in both unpatterned and patterned regions on semiconductor surfaces. Imaging and electrical characterization via scanning tunneling microscopy/spectroscopy indicate that high quality local ordering has been achieved within the arrays and that the clusters are electronically coupled to the semiconductor substrate via the low-resistance metal/semiconductor interface

  10. Surface capped fluorescent semiconductor nanoparticles: radiolytic synthesis and some of its biological applications

    International Nuclear Information System (INIS)

    Saha, A.

    2006-01-01

    Semiconductor nanocrystals or colloidal quantum dots (QD's) have generated great research interest because of their unusual properties arising out of quantum confinement effects. Many researchers in the field of nanotechnology focus on the 'high quality' semiconductor quantum dots. A good synthetic route should yield nanoparticles with narrow size distribution, good crystallinity, high photostability, desired surface properties and high photoluminescence quantum efficiency. In the domain of colloidal chemistry, reverse micellar synthesis, high temperature thermolysis using organometallic precursors and synthesis in aqueous media using polyphosphates or thiols as stabilizers are the most prominent ones. In contrast, γ-radiation assisted synthesis can offer a simplified approach to prepare size-controlled nanoparticles at room temperature. Syntheses of thiol-capped II-VI nanoparticles by radiolytic method, its characterization and some of its luminescence-based applications of biological relevance will be presented. The versatility of thiols (RSH) can be emphasized here as changing the R-group imparts different functionality to the particles and thus chemical behavior of the particles can be manipulated according to the application intended for. (authors)

  11. Structure of metal-rich (001) surfaces of III-V compound semiconductors

    DEFF Research Database (Denmark)

    Kumpf, C.; Smilgies, D.; Landemark, E.

    2001-01-01

    The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks....

  12. Chemical Modification of Semiconductor Surfaces for Molecular Electronics.

    Science.gov (United States)

    Vilan, Ayelet; Cahen, David

    2017-03-08

    Inserting molecular monolayers within metal/semiconductor interfaces provides one of the most powerful expressions of how minute chemical modifications can affect electronic devices. This topic also has direct importance for technology as it can help improve the efficiency of a variety of electronic devices such as solar cells, LEDs, sensors, and possible future bioelectronic ones. The review covers the main aspects of using chemistry to control the various aspects of interface electrostatics, such as passivation of interface states and alignment of energy levels by intrinsic molecular polarization, as well as charge rearrangement with the adjacent metal and semiconducting contacts. One of the greatest merits of molecular monolayers is their capability to form excellent thin dielectrics, yielding rich and unique current-voltage characteristics for transport across metal/molecular monolayer/semiconductor interfaces. We explain the interplay between the monolayer as tunneling barrier on the one hand, and the electrostatic barrier within the semiconductor, due to its space-charge region, on the other hand, as well as how different monolayer chemistries control each of these barriers. Practical tools to experimentally identify these two barriers and distinguish between them are given, followed by a short look to the future. This review is accompanied by another one, concerning the formation of large-area molecular junctions and charge transport that is dominated solely by molecules.

  13. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P. [Belarusian State University of Information and RadioElectronics (Belarus)

    2016-03-15

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  14. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    International Nuclear Information System (INIS)

    Chubenko, E. B.; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P.

    2016-01-01

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  15. Study of Surface States at the Semiconductor/electrolyte Interface of Liquid-Junction Solar Cells.

    Science.gov (United States)

    Siripala, Withana P.

    The existence of surface states at the semiconductor electrolyte interface of photoelectrochemical (PEC) cells plays a major role in determining the performance of the device in regard to the potential distribution and transport mechanisms of photogenerated carriers at the interface. We have investigated the n-TiO(,2)/electrolyte interface using three experimental techniques: relaxation spectrum analysis, photocurrent spectroscopy, and electrolyte electroreflectance (EER) spectroscopy. The effect of Fermi level pinning at the CdIn(,2)SE(,4)/aqueous-polysulfide interface was also studied using EER. Three distinct surface states were observed at the n-TiO(,2)/aqueous-electrolyte interface. The dominant state, which tails from the conduction band edge, is primarily responsible for the surface recombination of photocarriers at the interface. The second surface state, observed at 0.8 eV below the conduction band of TiO(,2), originates in the dark charge transfer intermediates (TiO(,2)-H). It is proposed that the sub-bandgap (SBG) photocurrent-potential behavior is a result of the mechanism of dynamic formation and annihilation of these surface states. The third surface state was at 1.3 eV below the conduction band of TiO(,2), and the SBG EER measurements show this state is "intrinsic" to the surface. These states were detected with SBG EER and impedance measurements in the presence of electrolytes that can adsorb on the surface of TiO(,2). Surface concentration of these states was evaluated with impedance measurements. EER measurements on a CdIn(,2)Se(,4)/polysulfide system have shown that the EER spectrum is sensitive to the surface preparation of the sample. The EER signal was quenched as the surface was driven to strong depletion, owing to Fermi level pinning at the interface in the presence of a high density of surface states. The full analysis of this effect enables us to measure the change in the flatband potential, as a function of the electrode potential, and

  16. Amplification of surface acoustic waves by transverse electric current in piezoelectric semiconductors

    DEFF Research Database (Denmark)

    Gulyaev, Yuri V.

    1974-01-01

    acoustoelectric effect but also lead to amplification of surface acoustic waves by electron drift perpendicular to the surface. For Love waves in a piezoelectric semiconductor film on a highly conducting substrate, the amplification coefficient is found and the conditions necessary for amplification...

  17. Preparation of ceramic materials for surface characterization

    International Nuclear Information System (INIS)

    Zipperian, D.C.

    1989-01-01

    This paper discusses how microstructural preparation permits a microscopic analysis of a material's internal structure, which is related to the physical properties of the material. Today, numerous microstructural quantitative and qualitative measurements are commonly utilized. Several of these include phase determination, phase hardness, phase distribution, grain size and shape, and porosity and size distribution. The most widely used surface characterization techniques are optical microscopy, electron microscopy, and x-ray microscopy. Optical microscopy includes both transmitted-and reflected-light techniques and requires a surface preparation prior to analysis. Transmitted-light microscopy samples require thinning and polishing of both sides of the sample, whereas reflected light techniques require polishing of only one side of the sample

  18. Preparation of antimony sulfide semiconductor nanoparticles by pulsed laser ablation in liquid

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Ren-De, E-mail: son003@sekisui.com [Research & Development Institute, High Performance Plastics Company, Sekisui Chemical Co., Ltd. 2-1 Hyakuyama, Shimamoto-Cho, Mishima-Gun, Osaka, 618-0021 (Japan); Tsuji, Takeshi [Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu-Cho, Matsue, 690-8504 (Japan)

    2015-09-01

    Highlights: • Pulsed laser ablation in liquid (LAL) was applied to prepare antimony sulfide nanoparticles (Sb{sub 2}S{sub 3} NPs). • Sb{sub 2}S{sub 3} NPs with a stoichiometric composition were successfully prepared by LAL in water without using any surfactants or capping agents. • Thus-prepared Sb{sub 2}S{sub 3} NPs showed low-temperature crystallization and melting at a temperature low as 200 °C. • The NPs-coated Sb{sub 2}S{sub 3} thin film showed comparable semiconductor properties (carrier mobility and carrier density) to the vacuum deposited one. • Byproducts such as CS{sub 2}, CH{sub 4} and CO were detected by GC-MS analysis when LAL was performed in organic solvent. • The LAL-induced decomposition mechanism of Sb{sub 2}S{sub 3} and organic solvents was discussed based on the GC-MS results. - Abstract: In this paper, we report on the synthesis of antimony sulfide (Sb{sub 2}S{sub 3}) semiconductor nanoparticles by pulsed laser ablation in liquid without using any surfactants or capping agents. Different results were obtained in water and organic solvents. In the case of water, Sb{sub 2}S{sub 3} nanoparticles with chemical compositions of stoichiometry were successfully prepared when laser irradiation was performed under the condition with the dissolved oxygen removed by argon gas bubbling. It was shown that thus-obtained Sb{sub 2}S{sub 3} nanoparticles exhibit features of not only low-temperature crystallization but also low-temperature melting at a temperature as low as 200 °C. Nanoparticle-coated Sb{sub 2}S{sub 3} thin films were found to show good visible light absorption and satisfying semiconductor properties (i.e., carrier mobility and density), which are essential for photovoltaic application. On the other hand, in the case of organic solvents (e.g., acetone, ethanol), such unexpected byproducts as CS{sub 2}, CO and CH{sub 4} were detected from the reaction system by GC-MS analysis, which suggests that both Sb{sub 2}S{sub 3} and organic

  19. Filamentation of a surface plasma wave over a semiconductor-free space interface

    Science.gov (United States)

    Kumar, Gagan; Tripathi, V. K.

    2007-12-01

    A large amplitude surface plasma wave (SPW), propagating over a semiconductor-free space interface, is susceptible to filamentation instability. A small perturbation in the amplitude of the SPW across the direction of propagation exerts a ponderomotive force on free electrons and holes, causing spatial modulation in free carrier density and hence the effective permittivity ɛeff of the semiconductor. The regions with higher ɛeff attract more power from the nieghborhood, leading to the growth of the perturbation. The growth rate increases with the intensity of the surface wave. It decreases with the frequency of the SPW.

  20. Resin bleed improvement on surface mount semiconductor device

    Science.gov (United States)

    Rajoo, Indra Kumar; Tahir, Suraya Mohd; Aziz, Faieza Abdul; Shamsul Anuar, Mohd

    2018-04-01

    Resin bleed is a transparent layer of epoxy compound which occurs during molding process but is difficult to be detected after the molding process. Resin bleed on the lead on the unit from the focused package, SOD123, can cause solderability failure at end customer. This failed unit from the customer will be considered as a customer complaint. Generally, the semiconductor company has to perform visual inspection after the plating process to detect resin bleed. Mold chase with excess hole, split cavity & stepped design ejector pin hole have been found to be the major root cause of resin bleed in this company. The modifications of the mold chase, changing of split cavity to solid cavity and re-design of the ejector pin proposed were derived after a detailed study & analysis conducted to arrive at these solutions. The solutions proposed have yield good results during the pilot run with zero (0) occurrence of resin bleed for 3 consecutive months.

  1. Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

    Science.gov (United States)

    He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

    2018-05-30

    Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

  2. Electronic transport at semiconductor surfaces - from point-contact transistor to micro-four-point probes

    DEFF Research Database (Denmark)

    Hasegawa, S.; Grey, Francois

    2002-01-01

    show that this type of conduction is measurable using new types of experimental probes, such as the multi-tip scanning tunnelling microscope and the micro-four-point probe. The resulting electronic transport properties are intriguing, and suggest that semiconductor surfaces should be considered...

  3. Semiconductor surface diffusion: Nonthermal effects of photon illumination

    International Nuclear Information System (INIS)

    Ditchfield, R.; Llera-Rodriguez, D.; Seebauer, E. G.

    2000-01-01

    Nonthermal influences of photon illumination on surface diffusion at high temperatures have been measured experimentally. Activation energies and pre-exponential factors for diffusion of germanium, indium, and antimony on silicon change by up to 0.3 eV and two orders of magnitude, respectively, in response to illumination by photons having energies greater than the substrate band gap. The parameters decrease for n-type material and increase for p-type material. Aided by results from photoreflectance spectroscopy, we suggest that motion of the surface quasi-Fermi-level for minority carriers accounts for much of the effect by changing the charge states of surface vacancies. An additional adatom-vacancy complexation mechanism appears to operate on p-type substrates. The results have significant implications for aspects of microelectronics fabrication by rapid thermal processing that are governed by surface mobility. (c) 2000 The American Physical Society

  4. Tunneling microscopy of 2H-MoS2: A compound semiconductor surface

    OpenAIRE

    Weimer, M.; Kramar, J.; Bai, C.; Baldeschwieler, J. D.

    1988-01-01

    Molybdenum disulfide, a layered semiconductor, is an interesting material to study with the tunneling microscope because two structurally and electronically different atomic species may be probed at its surface. We report on a vacuum scanning tunneling microscopy study of 2H-MoS2. Atomic resolution topographs and current images show the symmetry of the surface unit cell and clearly reveal two distinct atomic sites in agreement with the well-known x-ray crystal structure.

  5. Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

    Science.gov (United States)

    Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

    1994-01-01

    Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

  6. Photochemistry Aspects of the Laser Pyrolysis Addressing the Preparation of Oxide Semiconductor Photocatalysts

    Directory of Open Access Journals (Sweden)

    R. Alexandrescu

    2008-01-01

    Full Text Available The laser pyrolysis is a powerful and a versatile tool for the gas-phase synthesis of nanoparticles. In this paper, some fundamental and applicative characteristics of this technique are outlined and recent results obtained in the preparation of gamma iron oxide (γ-Fe2O3 and titania (TiO2 semiconductor nanostructures are illustrated. Nanosized iron oxide particles (4 to 9 nm diameter values have been directly synthesized by the laser-induced pyrolysis of a mixture containing iron pentacarbonyl/air (as oxidizer/ethylene (as sensitizer. Temperature-dependent Mossbauer spectroscopy shows that mainly maghemite is present in the sample obtained at higher laser power. The use of selected Fe2O3 samples for the preparation of water-dispersed magnetic nanofluids is also discussed. TiO2 nanoparticles comprising a mixture of anatase and rutile phases were synthesized via the laser pyrolysis of TiCl4- (vapors based gas-phase mixtures. High precursor concentration of the oxidizer was found to favor the prevalent anatase phase (about 90% in the titania nanopowders.

  7. Vapor-Liquid-Solid Etch of Semiconductor Surface Channels by Running Gold Nanodroplets.

    Science.gov (United States)

    Nikoobakht, Babak; Herzing, Andrew; Muramoto, Shin; Tersoff, Jerry

    2015-12-09

    We show that Au nanoparticles spontaneously move across the (001) surface of InP, InAs, and GaP when heated in the presence of water vapor. As they move, the particles etch crystallographically aligned grooves into the surface. We show that this process is a negative analogue of the vapor-liquid-solid (VLS) growth of semiconductor nanowires: the semiconductor dissolves into the catalyst and reacts with water vapor at the catalyst surface to create volatile oxides, depleting the dissolved cations and anions and thus sustaining the dissolution process. This VLS etching process provides a new tool for directed assembly of structures with sublithographic dimensions, as small as a few nanometers in diameter. Au particles above 100 nm in size do not exhibit this process but remain stationary, with oxide accumulating around the particles.

  8. Improving the Performance of Semiconductor Sensor Devices Using Surface Functionalization

    Science.gov (United States)

    Rohrbaugh, Nathaniel W.

    As production and understanding of III-nitride growth has progressed, this class of material has been used for its semiconducting properties in the fields of computer processing, microelectronics, and LEDs. As understanding of materials properties has advanced, devices were fabricated to be sensitive to environmental surroundings such as pH, gas, or ionic concentration. Simultaneously the world of pharmaceuticals and environmental science has come to the age where the use of wearable devices and active environmental sensing can not only help us learn more about our surroundings, but help save lives. At the crossroads of these two fields work has been done in marrying the high stability and electrical properties of the III-nitrides with the needs of a growing sensor field for various environments and stimuli. Device architecture can only get one so far, and thus the need for well understood surface functionalization techniques has arisen in the field of III-nitride environmental sensing. Many existing schemes for functionalization involve chemistries that may be unfriendly to a biological environment, unstable in solution, or expensive to produce. One possible solution to these issues is the work presented here, which highlights a surface modification scheme utilizing phosphonic acid based chemistry and biomolecular attachment. This dissertation presents a set of studies and experiments quantifying and analyzing the response behaviors of AlGaN/GaN field effect transistor (FET) devices via their interfacial electronic properties. Additional investigation was done on the modification of these surfaces, effects of stressful environmental conditions, and the utility of the phosphonic acid surface treatments. Signals of AlGaN/GaN FETs were measured as IDrain values and in the earliest study an average signal increase of 96.43% was observed when surfaces were incubated in a solution of a known recognition peptide sequence (SVSVGMKPSPRP). This work showed that even without

  9. Quantitative nanoscale surface voltage measurement on organic semiconductor blends

    International Nuclear Information System (INIS)

    Cuenat, Alexandre; Muñiz-Piniella, Andrés; Muñoz-Rojo, Miguel; Murphy, Craig E; Tsoi, Wing C

    2012-01-01

    We report on the validation of a method based on Kelvin probe force microscopy (KPFM) able to measure the different phases and the relative work function of polymer blend heterojunctions at the nanoscale. The method does not necessitate complex ultra-high vacuum setup. The quantitative information that can be extracted from the topography and the Kelvin probe measurements is critically analysed. Surface voltage difference can be observed at the nanoscale on poly(3-hexyl-thiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) blends and dependence on the annealing condition and the regio-regularity of P3HT is observed. (paper)

  10. Electronic-state control of amino acids on semiconductor surfaces

    International Nuclear Information System (INIS)

    Oda, Masato; Nakayama, Takashi

    2005-01-01

    Electronic structures of amino acids on the Si(1 1 1) surfaces are investigated by using ab initio Hartree-Fock calculations. It is shown that among various polar amino acids, a histidine is the only one that can be positively ionized when hole carriers are supplied in the Si substrate, by transferring the hole charge from Si substrate to an amino acid. This result indicates that the ionization of a histidine, which will activate the protein functions, can be controlled electrically by producing amino acid/Si junctions

  11. Preparation and handling of surfaces for superconducting radio frequency cavities

    International Nuclear Information System (INIS)

    Bloess, D.

    1988-01-01

    Fortunately, surface treatment for s.c. cavities knows only one simple rule. If one observes this rule strictly one will be successful, if not, one will fail! The rule is CLEANLINESS. This means: clean material (high purity niobium without inclusions), clean (analytical grade) polishing chemicals and solvents, ultraclean (semiconductor grade) rinsing water, ultraclean (class 100) assembly environment. In general, if one applies the same working practice as the semiconductor industry, one will produce surfaces that are less clean than silicon wafers, due to the shape of the cavity (an inner surface is much more difficult to clean than a flat wafer); due to its size and due to the material (niobium is hydrophilic which makes the water with all the dirt in it stick to the surface). 9 references

  12. Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface

    Directory of Open Access Journals (Sweden)

    Nataliya V. Finogenova

    2003-12-01

    Full Text Available In our paper we present the results of our research, which was carried out by means of semiconductor sensor techniques (SCS, which allowed evaluating heterogeneous death-rate of ozone (γ Teflon surface. When ozone concentration is near to Ambient Air Standard value, γ is assessed to be equal to 6,57*10-7. High technique response provide possibility to determine ozone contents in the air media and the percentage of ozone, decomposed on the communication surfaces and on the surfaces of installation in the low concentration range (1–100 ppb.

  13. On the problem of propagation of magnetoplasma surface waves in semiconductors

    International Nuclear Information System (INIS)

    Davydov, A.B.; Zakharov, V.A.

    1975-01-01

    A calculation is made of the spectrum of surface waves traveling along a boundary separating a dielectric from a magnetized semiconductor plasma parallel or at right angles to a magnetic field B. Dispersion relationships are obtained for the k is parallel to B case and these relationships explain the origin of the investigated surface waves on the boundary of a two-component (electron-hole) plasma in InSb. An analysis is made of the dispersion of the surface waves in the k is perpendicular to B case, which leads to a nonreciprocal propagation. (author)

  14. Theoretical modelling of semiconductor surfaces microscopic studies of electrons and photons

    CERN Document Server

    Srivastava, G P

    1999-01-01

    The state-of-the-art theoretical studies of ground state properties, electronic states and atomic vibrations for bulk semiconductors and their surfaces by the application of the pseudopotential method are discussed. Studies of bulk and surface phonon modes have been extended by the application of the phenomenological bond charge model. The coverage of the material, especially of the rapidly growing and technologically important topics of surface reconstruction and chemisorption, is up-to-date and beyond what is currently available in book form. Although theoretical in nature, the book provides

  15. Preparation and characterization of ZnO transparent semiconductor thin films by sol-gel method

    International Nuclear Information System (INIS)

    Tsay, Chien-Yie; Fan, Kai-Shiung; Chen, Sih-Han; Tsai, Chia-Hao

    2010-01-01

    Transparent semiconductor thin films of zinc oxide (ZnO) were deposited onto alkali-free glass substrates by the sol-gel method and spin-coating technique. In this study, authors investigate the influence of the heating rate of the preheating process (4 or 10 o C/min) on the crystallization, surface morphology, and optical properties of sol-gel derived ZnO thin films. The ZnO sol was synthesized by dissolving zinc acetate dehydrate in ethanol, and then adding monoethanolamine. The as-coated films were preheated at 300 o C for 10 min and annealed at 500 o C for 1 h in air ambiance. Experimental results indicate that the heating rate of the preheating process strongly affected the surface morphology and transparency of ZnO thin film. Specifically, a heating rate of 10 o C/min for the preheating process produces a preferred orientation along the (0 0 2) plane and a high transmittance of 92% at a wavelength of 550 nm. Furthermore, this study reports the fabrication of thin-film transistors (TFTs) with a transparent ZnO active channel layer and evaluates their electrical performance.

  16. Preparation of n-type semiconductor SnO2 thin films

    International Nuclear Information System (INIS)

    Rahal, Achour; Benramache, Said; Benhaoua, Boubaker

    2013-01-01

    We studied fluorine-doped tin oxide on a glass substrate at 350°C using an ultrasonic spray technique. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and NaOH were used as the starting material, dopant source, solvent and stabilizer, respectively. The SnO 2 : F thin films were deposited at 350°C and a pending time of 60 and 90 s. The as-grown films exhibit a hexagonal wurtzite structure and have (101) orientation. The G = 31.82 nm value of the grain size is attained from SnO 2 : F film grown at 90 s, and the transmittance is greater than 80% in the visible region. The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58 (Ω·cm) −1 , with the maximum activation energy value of the films being found to measure 22.85 meV, indicating that the films exhibit an n-type semiconducting nature. (semiconductor materials)

  17. Influence of impurities on the surface morphology of the TIBr crystal semiconductor

    International Nuclear Information System (INIS)

    Santos, Robinson A. dos; Silva, Julio B. Rodrigues da; Martins, Joao F.T.; Ferraz, Caue de M.; Costa, Fabio E. da; Mesquita, Carlos H. de; Hamada, Margarida M.; Gennari, Roseli F.

    2013-01-01

    The impurity effect in the surface morphology quality of TlBr crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detectors. The crystals were purified and grown by the Repeated Bridgman technique. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. A significant difference in the crystals impurity concentration was observed for almost all impurities, compared to those found in the raw material. The crystals wafer grown twice showed a surface roughness and grains which may be due to the presence of impurities on the surface, while those obtained with crystals grown three times presented a more uniform surface: even though, a smaller roughness was still observed. It was demonstrated that the impurities affect strongly the surface morphology quality of crystals. (author)

  18. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    Science.gov (United States)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-07-01

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  19. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    International Nuclear Information System (INIS)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-01-01

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO 2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  20. Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

    International Nuclear Information System (INIS)

    Jana, Dipankar; Porwal, S.; Sharma, T. K.; Oak, S. M.; Kumar, Shailendra

    2014-01-01

    Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates

  1. Contributions of electron microscopy to the understanding of reactions on compound semiconductor surfaces

    International Nuclear Information System (INIS)

    Sands, T.

    1986-01-01

    Reacted films on compound semiconductor substrates present challenging materials characterization problems which often require the application of transmission electron microscopy (TEM) techniques. In this paper, both the problem - solving potential of the TEM techniques and the limits imposed by preparation of thin film/compound semiconductor TEM specimens are discussed. Studies of the Ni/GaAs, CuCl/aq)/CdS and Pd/GaAs reactions exemplify the role of TEM in identifying and determining the spatial distribution of interface - stabilized polymorphs and new ternary phases (e.g. tetragonal Cu/sub 2/S, Ni/sub 3/GaAs and Pd/sub x/GaAs). These examples also serve to clarify the relationship between TEM and complementary analysis techniques such as Rutherford backscattering spectrometry, Auger electron spectroscopy and glancing-angle x-ray diffraction. In particular, it is argued that a combination of (1) high-spatial-resolution information obtained by TEM and (2) an indication of the ''average'' behavior provided by data from a complementary characterization technique provide the minimum quality and quantity of data necessary to understand most reactions on compound semiconductor substrates

  2. Some specific features of a surface-screw plasma instability in semiconductors

    International Nuclear Information System (INIS)

    Karavaev, G.F.; Tsipivka, Yu.I.

    1976-01-01

    A numerical analysis of the dispersion relation has been carried out, which enables to discover some new peculiarities in the behaviour of the surface helical instability (SHI) of a semiconductor plasma. To simplify the dispersion relation a semiconductor with nearly equal electron and hole mobilities has been considered. The dependences of threshold characteristics of SHI on a magnetic field H for different angular harmonics are represented graphically. A comparison of the formulas obtained shows that the approximation of truncated series yields an incorrect qualitative dependence of the wavelength on H, whereas asymptotic formulas in the range of strong magnetic fields yield not only a correct qualitative dependence of the threshold characteristics on H, but also a good quantitative agreement

  3. Analysis of defects near the surface and the interface of semiconductors by monoenergetic positron beam

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro

    1989-01-01

    A monoenergetic low-speed positron beam line is constructed and a study is made on defects near the surface and the interface of semiconductors by using the beam line. Sodium-22 is used as beam source. Ion implantation, though being an essential technique for semiconductor integrated circuit production, can introduce lattice defects, affecting the yield and reliability of the resultant semiconductor devices. Some observations are made on the dependence of the Doppler broadening on the depth, and the ΔS-E relationship in P + -ion implanted SiO 2 (43nm)-Si. These observations demonstrate that monoenergetic positron beam is useful to detect hole-type defects resulting from ion implantation over a very wide range of defect density. Another study is made for the detection of defects near an interface. Positrons are expected to drift when left in an electric field with a gradient. Observations made here show that positrons can be concentrated at any desired interface by introducing an electric field intensity gradient in the oxide. This process also serves for accurate measurement of the electronic structure at the interface, and the effect of ion implantation and radiations on the interface. (N.K.)

  4. Platinum nanoparticles on gallium nitride surfaces: effect of semiconductor doping on nanoparticle reactivity.

    Science.gov (United States)

    Schäfer, Susanne; Wyrzgol, Sonja A; Caterino, Roberta; Jentys, Andreas; Schoell, Sebastian J; Hävecker, Michael; Knop-Gericke, Axel; Lercher, Johannes A; Sharp, Ian D; Stutzmann, Martin

    2012-08-01

    Platinum nanoparticles supported on n- and p-type gallium nitride (GaN) are investigated as novel hybrid systems for the electronic control of catalytic activity via electronic interactions with the semiconductor support. In situ oxidation and reduction were studied with high pressure photoemission spectroscopy. The experiments revealed that the underlying wide-band-gap semiconductor has a large influence on the chemical composition and oxygen affinity of supported nanoparticles under X-ray irradiation. For as-deposited Pt cuboctahedra supported on n-type GaN, a higher fraction of oxidized surface atoms was observed compared to cuboctahedral particles supported on p-type GaN. Under an oxygen atmosphere, immediate oxidation was recorded for nanoparticles on n-type GaN, whereas little oxidation was observed for nanoparticles on p-type GaN. Together, these results indicate that changes in the Pt chemical state under X-ray irradiation depend on the type of GaN doping. The strong interaction between the nanoparticles and the support is consistent with charge transfer of X-ray photogenerated free carriers at the semiconductor-nanoparticle interface and suggests that GaN is a promising wide-band-gap support material for photocatalysis and electronic control of catalysis.

  5. Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

    Science.gov (United States)

    Tisdale, William A., III

    Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots

  6. Rational design of organic semiconductors for texture control and self-patterning on halogenated surfaces

    KAUST Repository

    Ward, Jeremy W.

    2014-05-15

    Understanding the interactions at interfaces between the materials constituting consecutive layers within organic thin-film transistors (OTFTs) is vital for optimizing charge injection and transport, tuning thin-film microstructure, and designing new materials. Here, the influence of the interactions at the interface between a halogenated organic semiconductor (OSC) thin film and a halogenated self-assembled monolayer on the formation of the crystalline texture directly affecting the performance of OTFTs is explored. By correlating the results from microbeam grazing incidence wide angle X-ray scattering (μGIWAXS) measurements of structure and texture with OTFT characteristics, two or more interaction paths between the terminating atoms of the semiconductor and the halogenated surface are found to be vital to templating a highly ordered morphology in the first layer. These interactions are effective when the separating distance is lower than 2.5 dw, where dw represents the van der Waals distance. The ability to modulate charge carrier transport by several orders of magnitude by promoting "edge-on" versus "face-on" molecular orientation and crystallographic textures in OSCs is demonstrated. It is found that the "edge-on" self-assembly of molecules forms uniform, (001) lamellar-textured crystallites which promote high charge carrier mobility, and that charge transport suffers as the fraction of the "face-on" oriented crystallites increases. The role of interfacial halogenation in mediating texture formation and the self-patterning of organic semiconductor films, as well as the resulting effects on charge transport in organic thin-film transistors, are explored. The presence of two or more anchoring sites between a halogenated semiconductor and a halogenated self-assembled monolayer, closer than about twice the corresponding van der Waals distance, alter the microstructure and improve electrical properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Glial cell adhesion and protein adsorption on SAM coated semiconductor and glass surfaces of a microfluidic structure

    Science.gov (United States)

    Sasaki, Darryl Y.; Cox, Jimmy D.; Follstaedt, Susan C.; Curry, Mark S.; Skirboll, Steven K.; Gourley, Paul L.

    2001-05-01

    The development of microsystems that merge biological materials with microfabricated structures is highly dependent on the successful interfacial interactions between these innately incompatible materials. Surface passivation of semiconductor and glass surfaces with thin organic films can attenuate the adhesion of proteins and cells that lead to biofilm formation and biofouling of fluidic structures. We have examined the adhesion of glial cells and serum albumin proteins to microfabricated glass and semiconductor surfaces coated with self-assembled monolayers of octadecyltrimethoxysilane and N-(triethoxysilylpropyl)-O- polyethylene oxide urethane, to evaluate the biocompatibility and surface passivation those coatings provide.

  8. Superamphiphobic Surfaces Prepared by Coating Multifunctional Nanofluids.

    Science.gov (United States)

    Esmaeilzadeh, Pouriya; Sadeghi, Mohammad Taghi; Bahramian, Alireza; Fakhroueian, Zahra; Zarbakhsh, Ali

    2016-11-23

    Construction of surfaces with the capability of repelling both water and oil is a challenging issue. We report the superamphiphobic properties of mineral surfaces coated with nanofluids based on synthesized Co-doped and Ce-doped Barium Strontium Titanate (CoBST and CeBST) nanoparticles and fluorochemicals of trichloro(1H,1H,2H,2H-perfluorooctyl)silane (PFOS) and polytetrafluoroethylene (PTFE). Coating surfaces with these nanofluids provides both oil (with surface tensions as low as 23 mN/m) and water repellency. Liquids with high surface tension (such as water and ethylene glycol) roll off the coated surface without tilting. A water drop released from 8 mm above the coated surface undergoes first a lateral displacement from its trajectory and shape deformation, striking the surface after 23 ms, bouncing and rolling off freely. These multifunctional coating nanofluids impart properties of self-cleaning. Applications include coating surfaces where cleanliness is paramount such as in hospitals and domestic environments as well as the maintenance of building facades and protection of public monuments from weathering. These superamphiphobic-doped nanofluids have thermal stability up to 180 °C; novel industrial applications include within fracking and the elimination of condensate blockage in gas reservoirs.

  9. Characterizing Surfaces of the Wide Bandgap Semiconductor Ilmenite with Scanning Probe Microcopies

    Science.gov (United States)

    Wilkins, R.; Powell, Kirk St. A.

    1997-01-01

    Ilmenite (FeTiO3) is a wide bandgap semiconductor with an energy gap of about 2.5eV. Initial radiation studies indicate that ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Two scanning probe microscopy methods have been used to characterize the surface of samples taken from Czochralski grown single crystals. The two methods, atomic force microscopy (AFM) and scanning tunneling microscopy (STM), are based on different physical principles and therefore provide different information about the samples. AFM provides a direct, three-dimensional image of the surface of the samples, while STM give a convolution of topographic and electronic properties of the surface. We will discuss the differences between the methods and present preliminary data of each method for ilmenite samples.

  10. The Effects of Surface Reconstruction and Electron-Positron Correlation on the Annihilation Characteristics of Positrons Trapped at Semiconductor Surfaces

    International Nuclear Information System (INIS)

    Fazleev, N. G.; Jung, E.; Weiss, A. H.

    2009-01-01

    Experimental positron annihilation induced Auger electron spectroscopy (PAES) data from Ge(100) and Ge(111) surfaces display several strong Auger peaks corresponding to M 4,5 N 1 N 2,3 , M 2,3 M 4,5 M 4,5 , M 2,3 M 4,5 V, and M 1 M 4,5 M 4,5 Auger transitions. The integrated peak intensities of Auger transitions have been used to obtain experimental annihilation probabilities for the Ge 3d and 3p core electrons. The experimental data were analyzed by performing theoretical studies of the effects of surface reconstructions and electron-positron correlations on image potential induced surface states and annihilation characteristics of positrons trapped at the reconstructed Ge(100) and Ge(111) surfaces. Calculations of positron surface states and annihilation characteristics have been performed for Ge(100) surface with (2x1), (2x2), and (4x2) reconstructions, and for Ge(111) surface with c(2x8) reconstruction. Estimates of the positron binding energy and annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of the semiconductor and to the approximations used to describe electron-positron correlations. The results of these theoretical studies are compared with the ones obtained for the reconstructed Si(100)-(2x1) and Si(111)-(7x7) surfaces.

  11. Electrostatic mechanism of shaping the wave micro-relief on the surface of a semiconductor, sputtered by an ion beam

    International Nuclear Information System (INIS)

    Grigor'ev, A.I.

    2000-01-01

    The effect of the electric field formed due to the surface charging, is not accounted for in the weakly-developed theoretical models for the ordered micro-relief formation on the surface of a semiconductor under the impact of an ion beam. It is shown, that the problem on modeling the physical mechanism of forming the ordered wave micro-relief on the semiconductor surface under the impact of a high-energy ion beam may be interpreted as an electrostatic one [ru

  12. Thermally controlled growth of surface nanostructures on ion-modified AIII-BV semiconductor crystals

    Science.gov (United States)

    Trynkiewicz, Elzbieta; Jany, Benedykt R.; Wrana, Dominik; Krok, Franciszek

    2018-01-01

    The primary motivation for our systematic study is to provide a comprehensive overview of the role of sample temperature on the pattern evolution of several AIII-BV semiconductor crystal (001) surfaces (i.e., InSb, InP, InAs, GaSb) in terms of their response to low-energy Ar+ ion irradiation conditions. The surface morphology and the chemical diversity of such ion-modified binary materials has been characterized by means of scanning electron microscopy (SEM). In general, all surface textures following ion irradiation exhibit transitional behavior from small islands, via vertically oriented 3D nanostructures, to smoothened surface when the sample temperature is increased. This result reinforces our conviction that the mass redistribution of adatoms along the surface plays a vital role during the formation and growth process of surface nanostructures. We would like to emphasize that this paper addresses in detail for the first time the topic of the growth kinetics of the nanostructures with regard to thermal surface diffusion, while simultaneously offering some possible approaches to supplementing previous studies and therein gaining a new insight into this complex issue. The experimental results are discussed with reference to models of the pillars growth, abutting on preferential sputtering, the self-sustained etch masking effect and the redeposition process recently proposed to elucidate the observed nanostructuring mechanism.

  13. Preparation and dielectric investigation of organic metal insulator semiconductor (MIS) structures with a ferroelectric polymer

    Energy Technology Data Exchange (ETDEWEB)

    Kalbitz, Rene; Fruebing, Peter; Gerhard, Reimund [Department of Physics and Astronomy, University of Potsdam (Germany); Taylor, Martin [School of Electronic Engineering, Bangor University (United Kingdom)

    2010-07-01

    Ferroelectric field effect transistors (FeFETs) offer the prospect of an organic-based memory device. Since the charge transport in the semiconductor is confined to the interface region between the insulator and the semiconductor, the focus of the present study was on the investigation of this region in metal-insulator-semiconductor (MIS) capacitors using dielectric spectroscopy. Capacitance-Voltage (C-V) measurements at different frequencies as well as capacitance-frequency (C-f) measurements after applying different poling voltages were carried out. The C-V measurements yielded information about the frequency dependence of the depletion layer width as well as the number of charges stored at the semiconductor/ insulator interface. The results are compared to numerical calculations based on a model introduced by S. L. Miller (JAP, 72(12), 1992). The C-f measurements revealed three main relaxation processes. An equivalent circuit has been developed to model the frequency response of the MIS capacitor. With this model the origin of the three relaxations may be deduced.

  14. Metallurgy and purification of semiconductor materials

    International Nuclear Information System (INIS)

    Mughal, G.R.; Ali, M.M.; Ali, I.

    1996-01-01

    In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

  15. Transient measurements with an ultrafast scanning tunneling microscope on semiconductor surfaces

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1998-01-01

    We demonstrate: the use of an ultrafast scanning tunneling microscope on a semiconductor surface. Laser-induced transient signals with 1.8 ps rise time are detected, The investigated sample is a low-temperature grown GaAs layer plated on a sapphire substrate with a thin gold layer that serves as st...... bias contact, For comparison, the measurements are performed with the tip in contact to the sample as well as in tunneling above the surface, In contact and under bias, the transient signals are identified as a transient photocurrent, An additional signal is generated by a transient voltage induced...... by the nonuniform carrier density created by the absorption of the light (photo Dember effect). The transient depends in sign and in shape on the direction of optical excitation. This signal is the dominating transient in tunneling mode. The signals are explained by a capacitive coupling across the tunneling gap...

  16. One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

    Science.gov (United States)

    Dudy, L.; Aulbach, J.; Wagner, T.; Schäfer, J.; Claessen, R.

    2017-11-01

    Interacting electrons confined to only one spatial dimension display a wide range of unusual many-body quantum phenomena, ranging from Peierls instabilities to the breakdown of the canonical Fermi liquid paradigm to even unusual spin phenomena. The underlying physics is not only of tremendous fundamental interest, but may also have bearing on device functionality in future micro- and nanoelectronics with lateral extensions reaching the atomic limit. Metallic adatoms deposited on semiconductor surfaces may form self-assembled atomic nanowires, thus representing highly interesting and well-controlled solid-state realizations of such 1D quantum systems. Here we review experimental and theoretical investigations on a few selected prototypical nanowire surface systems, specifically Ge(0 0 1)-Au and Si(hhk)-Au, and the search for 1D quantum states in them. We summarize the current state of research and identify open questions and issues.

  17. Molecular-scale shear response of the organic semiconductor β -DBDCS (100) surface

    Science.gov (United States)

    Álvarez-Asencio, Rubén; Moreno-Ramírez, Jorge S.; Pimentel, Carlos; Casado, Santiago; Matta, Micaela; Gierschner, Johannes; Muccioli, Luca; Yoon, Seong-Jun; Varghese, Shinto; Park, Soo Young; Gnecco, Enrico; Pina, Carlos M.

    2017-09-01

    In this work we present friction-force microscopy (FFM) lattice-resolved images acquired on the (100) facet of the semiconductor organic oligomer (2 Z ,2'Z )-3 , 3' -(1,4-phenylene)bis(2-(4-butoxyphenyl)acrylonitrile) (β -DBDCS) crystal in water at room temperature. Stick-slip contrast, lateral contact stiffness, and friction forces are found to depend strongly on the sliding direction due to the anisotropic packing of the molecular chains forming the crystal surface along the [010] and [001] directions. The anisotropy also causes the maximum value of the normal force applicable before wearing to increase by a factor of 3 when the scan is performed along the [001] direction on the (100) face. Altogether, our results contribute to achieving a better understanding of the molecular origin of friction anisotropy on soft crystalline surfaces, which has been often hypothesized but rarely investigated in the literature.

  18. Surface Tension Directed Fluidic Self-Assembly of Semiconductor Chips across Length Scales and Material Boundaries

    Directory of Open Access Journals (Sweden)

    Shantonu Biswas

    2016-03-01

    Full Text Available This publication provides an overview and discusses some challenges of surface tension directed fluidic self-assembly of semiconductor chips which are transported in a liquid medium. The discussion is limited to surface tension directed self-assembly where the capture, alignment, and electrical connection process is driven by the surface free energy of molten solder bumps where the authors have made a contribution. The general context is to develop a massively parallel and scalable assembly process to overcome some of the limitations of current robotic pick and place and serial wire bonding concepts. The following parts will be discussed: (2 Single-step assembly of LED arrays containing a repetition of a single component type; (3 Multi-step assembly of more than one component type adding a sequence and geometrical shape confinement to the basic concept to build more complex structures; demonstrators contain (3.1 self-packaging surface mount devices, and (3.2 multi-chip assemblies with unique angular orientation. Subsequently, measures are discussed (4 to enable the assembly of microscopic chips (10 μm–1 mm; a different transport method is introduced; demonstrators include the assembly of photovoltaic modules containing microscopic silicon tiles. Finally, (5 the extension to enable large area assembly is presented; a first reel-to-reel assembly machine is realized; the machine is applied to the field of solid state lighting and the emerging field of stretchable electronics which requires the assembly and electrical connection of semiconductor devices over exceedingly large area substrates.

  19. Preparation and surface labeling of murine eosinophils

    International Nuclear Information System (INIS)

    Burgess, A.W.; Cruise, K.M.; Mitchell, G.F.; Watt, S.M.

    1980-01-01

    Eosinophilic polymorphonuclear leukocytes were isolated from the peritoneal cavity of BALB/c mice infected with the parasite Mesocestoides corti. Approximately 4 x 10 7 eosinophils (purity, 50%) could be harvested from each mouse. A high yield and purity of eosinophils was obtained from the peritoneal cells of infected male BALB/c mice using density centrifugation on a gradient of slightly hypotonic colloidal silica sol (Percoll). After initial irradiation of the mice to lower the lymphocyte contamination, subsequent density gradient (and where nescessary sedimentation velocity) centrifugation yielded 10 8 eosinophils (purity >95%) from six to eight mice. It was also possible to isolate small numbers of eosinophils (2 x 10 4 cells/minute, purity >99%) without irradiating the mice. This could be achieved by separating the density gradient purified peritoneal cells by light-scatter on a Becton-Dickinson cell sorter (FACS II). Analysis of proteins extracted from eosinophils using polyacrylamide gel electrophoresis in the presence of sodium dodecyl sulfate revealed a group of high molecular weight proteins (between 250K and 160K) which were not as distinctive in the neutrophil profile. Surface labeling was performed, before the cell separation, by using 125 I and 1,3,4,6-tetrachloro-3α,6α-diphenylglycoluril. Only five 125 I-labeled proteins were detected initially (all with apparent molecular weights >50,000). No 125 I appeared to be associated with actin under the conditions used for surface labeling. Four of the eosinophil surface labeled proteins corresponded to surface labeled proteins on neutrophils, but the major surface component of the eosinophils (MW 79,000) appeared to be smaller than the major neutrophil protein (MW 90,000). (author)

  20. The Role of Electronic Excitations on Chemical Reaction Dynamics at Metal, Semiconductor and Nanoparticle Surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tully, John C. [Yale Univ., New Haven, CT (United States)

    2017-06-10

    Chemical reactions are often facilitated and steered when carried out on solid surfaces, essential for applications such as heterogeneous catalysis, solar energy conversion, corrosion, materials processing, and many others. A critical factor that can determine the rates and pathways of chemical reactions at surfaces is the efficiency and specificity of energy transfer; how fast does energy move around and where does it go? For reactions on insulator surfaces energy transfer generally moves in and out of vibrations of the adsorbed molecule and the underlying substrate. By contrast, on metal surfaces, metallic nanoparticles and semiconductors, another pathway for energy flow opens up, excitation and de-excitation of electrons. This so-called “nonadiabatic” mechanism often dominates the transfer of energy and can directly impact the course of a chemical reaction. Conventional computational methods such as molecular dynamics simulation do not account for this nonadiabatic behavior. The current DOE-BES funded project has focused on developing the underlying theoretical foundation and the computational methodology for the prediction of nonadiabatic chemical reaction dynamics at surfaces. The research has successfully opened up new methodology and new applications for molecular simulation. In particular, over the last three years, the “Electronic Friction” theory, pioneered by the PI, has now been developed into a stable and accurate computational method that is sufficiently practical to allow first principles “on-the-fly” simulation of chemical reaction dynamics at metal surfaces.

  1. Recent advances in photoelectrochemistry. Part 1. Preparation and photocatalytic activities of semiconductor microcrystals; Saikin no hikari denki kagaku. 1. Handotai chobiryushi no chosei to hikari shokubai kassei

    Energy Technology Data Exchange (ETDEWEB)

    Yoneyama, H; Torimoto, T [Osaka Univ., Osaka (Japan). Faculty of Engineering

    1995-01-05

    The energy structure of semiconductor microcrystals with less than 10nm particle size is different from that of bulk semiconductor, and the reducing force of electrons and the oxidizing force of holes produced by light in microcrystals are larger than those of bulk semiconductor. Focusing on the application of semiconductor microcrystals to photocatalysis, the effects of the particle size and surface conditions of particles on photocatalytic activity are discussed. It has been shown that the change in the characteristics of semiconductor microcrystals depends on particle size, and microcrystals with narrow distribution of particle sized is necessary for the study of the characteristics of semiconductor microcrystals. An example of high efficient progress of CO2 direct reduction by the use of semiconductor microcrystals is introduced. It has been made clear that the photocatalytic activity of semiconductor is improved when a small amount of electrode catalyst is supported in it. A unique photocatalytic reaction which can not be observed with bulk particles can be progressed by the use of high oxidation and reduction ability caused by quantum size effect of semiconductor microcrystals. 26 refs., 2 figs., 1 tab.

  2. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Passmann, Regina

    2008-08-15

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  3. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    International Nuclear Information System (INIS)

    Passmann, Regina

    2008-01-01

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  4. Physics and Chemistry on Well-Defined Semiconductor and Oxide Surfaces

    Science.gov (United States)

    Chen, Peijun

    High resolution electron energy loss spectroscopy (HREELS) and other surface spectroscopic techniques have been employed to investigate the following two classes of surface/interface phenomena on well-defined semiconductor and oxide surfaces: (i) the fundamental physical and chemical processes involved in gas-solid interaction on silicon single crystal surfaces, and (ii) the physical and chemical properties of metal-oxide interfaces. The particular systems reported in this dissertation are: NH_3, PH_3 and B_ {10}H_{14} on Si(111)-(7 x 7); NH_3 on Si(100) -(2 x 1); atomic H on Si(111)-(7 x 7) and boron-modified Si(111); Al on Al_2O_3 and Sn on SiO_2.. On silicon surfaces, the surface dangling bonds function as the primary adsorption sites where surface chemical processes take place. The unambiguous identification of surface species by vibrational spectroscopy allows the elementary steps involved in these surface chemical processes to be followed on a molecular level. For adsorbate molecules such as NH_3 and PH_3, the nature of the initial low temperature (100 -300 K) adsorption is found to be dissociative, while that for B_{10}H_ {14} is non-dissociative. This has been deduced based upon the presence (or absence) of specific characteristic vibrational mode(s) on surface. By following the evolution of surface species as a function of temperature, the elementary steps leading to silicon nitride thin film growth and doping of silicon are elucidated. In the case of NH_3 on Si(111)-(7 x 7) and Si(100)-(2 x 1), a detailed understanding on the role of substrate surface structure in controlling the surface reactivity has been gained on the basis of a Si adatom backbond-strain relief mechanism on the Si(111) -(7 x 7). The electronic modification to Si(111) surface by subsurface boron doping has been shown to quench its surface chemistry, even for the most aggressive atomic H. This discovery is potentially meaningful to the technology of gas-phase silicon etching. The

  5. Surface Preparation for Microdebonding Analysis of Composites

    International Nuclear Information System (INIS)

    Kahraman, Ramazan; Mandell, J. F.

    1999-01-01

    The bond strength between fibers and matrix is an essential property of all composite materials and it must be measured accurately to be able to correlate it with the composite behavior. There are several factors affecting its measurement. This paper discusses the polishing and load application aspects of the indentation test technique for fibre-matrix bond strength determination in polymer and ceramic matrix composites. Different polishing procedures are suggested for polymer and ceramic surfaces for obtaining a smooth surface which is a must for the test results to be reliable. The geometry of the fibers tested was also found to affect the analysis results. For best results, fibers with similar size and which are similarly surrounded by other fibers should be tested. Care should be taken during load application on a fiber for the loading probe not to approach the fiber circumference. The force should be applied in a small increments as possible, however starting from a high enough level to prevent fiber breakage due to surface damage from several loading steps. (Author)

  6. n/p-Type changeable semiconductor TiO{sub 2} prepared from NTA

    Energy Technology Data Exchange (ETDEWEB)

    Li Qiuye; Wang Xiaodong; Jin Zhensheng, E-mail: zhenshengjin@henu.edu.cn; Yang Dagang; Zhang Shunli; Guo Xinyong; Yang Jianjun; Zhang Zhijun [Henan University, Key Laboratory of Special Functional Materials (China)

    2007-10-15

    A novel kind of nano-sized TiO{sub 2} (anatase) was obtained by high-temperature (400-700 deg. C) dehydration of nanotube titanic acid (H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2}, NTA). The high-temperature (400-700 deg. C) dehydrated nanotube titanic acids (HD-NTAs) with a unique defect structure exhibited a p-type semiconductor behavior under visible-light irradiation ({lambda}{>=} 420nm, E{sub photon}=2.95 eV), whereas exhibited an n-type semiconductor behavior irradiated with UV light ({lambda}{>=} 365nm, E{sub photon}=3.40 eV)

  7. Facile preparation of superhydrophobic surface with high adhesive ...

    Indian Academy of Sciences (India)

    Glass substrates modified by carbon/silica composites are fabricated through a two-step process for the preparation of a superhydrophobic surface (water contact angle ≥ 150°). Carbon nanoparticles were first prepared through a deposition process on glass using a hydrothermal synthesis route, then the glass was ...

  8. Preparation of surface enhanced Raman substrate and its characterization

    Science.gov (United States)

    Liu, Y.; Wang, J. Y.; Wang, J. Q.

    2017-10-01

    Surface enhanced Raman spectroscopy (SERS) is a fast, convenient and highly sensitive detection technique, and preparing the good effect and repeatable substrate is the key to realize the trace amount and quantitative detection in the field of food safety detection. In this paper, a surface enhanced Raman substrate based on submicrometer silver particles structure was prepared by chemical deposition method, and characterized its structure and optical properties.

  9. Surface Plasmon Polariton-Assisted Long-Range Exciton Transport in Monolayer Semiconductor Lateral Heterostructure

    Science.gov (United States)

    Shi, Jinwei; Lin, Meng-Hsien; Chen, Yi-Tong; Estakhri, Nasim Mohammadi; Tseng, Guo-Wei; Wang, Yanrong; Chen, Hung-Ying; Chen, Chun-An; Shih, Chih-Kang; Alã¹, Andrea; Li, Xiaoqin; Lee, Yi-Hsien; Gwo, Shangjr

    Recently, two-dimensional (2D) semiconductor heterostructures, i.e., atomically thin lateral heterostructures (LHSs) based on transition metal dichalcogenides (TMDs) have been demonstrated. In an optically excited LHS, exciton transport is typically limited to a rather short spatial range ( 1 micron). Furthermore, additional losses may occur at the lateral interfacial regions. Here, to overcome these challenges, we experimentally implement a planar metal-oxide-semiconductor (MOS) structure by placing a monolayer of WS2/MoS2 LHS on top of an Al2O3 capped Ag single-crystalline plate. We found that the exciton transport range can be extended to tens of microns. The process of long-range exciton transport in the MOS structure is confirmed to be mediated by an exciton-surface plasmon polariton-exciton conversion mechanism, which allows a cascaded energy transfer process. Thus, the planar MOS structure provides a platform seamlessly combining 2D light-emitting materials with plasmonic planar waveguides, offering great potential for developing integrated photonic/plasmonic functionalities.

  10. Theory of Covalent Adsorbate Frontier Orbital Energies on Functionalized Light-Absorbing Semiconductor Surfaces.

    Science.gov (United States)

    Yu, Min; Doak, Peter; Tamblyn, Isaac; Neaton, Jeffrey B

    2013-05-16

    Functional hybrid interfaces between organic molecules and semiconductors are central to many emerging information and solar energy conversion technologies. Here we demonstrate a general, empirical parameter-free approach for computing and understanding frontier orbital energies - or redox levels - of a broad class of covalently bonded organic-semiconductor surfaces. We develop this framework in the context of specific density functional theory (DFT) and many-body perturbation theory calculations, within the GW approximation, of an exemplar interface, thiophene-functionalized silicon (111). Through detailed calculations taking into account structural and binding energetics of mixed-monolayers consisting of both covalently attached thiophene and hydrogen, chlorine, methyl, and other passivating groups, we quantify the impact of coverage, nonlocal polarization, and interface dipole effects on the alignment of the thiophene frontier orbital energies with the silicon band edges. For thiophene adsorbate frontier orbital energies, we observe significant corrections to standard DFT (∼1 eV), including large nonlocal electrostatic polarization effects (∼1.6 eV). Importantly, both results can be rationalized from knowledge of the electronic structure of the isolated thiophene molecule and silicon substrate systems. Silicon band edge energies are predicted to vary by more than 2.5 eV, while molecular orbital energies stay similar, with the different functional groups studied, suggesting the prospect of tuning energy alignment over a wide range for photoelectrochemistry and other applications.

  11. Surface modification-a novel way of attaching cocatalysts on CdS semiconductors for photocatalytic hydrogen evolution

    KAUST Repository

    Yu, Weili

    2014-08-22

    Noble metals as cocatalysts for hydrogen evolution are widely investigated for semiconductor photocatalytic water splitting. In this paper, we present a novel way to attach not only noble metals, but also transitional metals onto CdS nanocrystals as cocatalysts for hydrogen evolution. The hydrogen evolution performances for each metal were compared and result shows that Pd attached CdS gives the highest hydrogen evolution rate of 250 μmol/h. The amounts of metal ions attached on the surface were measured by inductively coupled plasma optical emission spectrometry (ICP-OES). This work confirms that surface modification is a promising way of attaching cocatalysts onto semiconductor photocatalysts.

  12. Surface modification-a novel way of attaching cocatalysts on CdS semiconductors for photocatalytic hydrogen evolution

    KAUST Repository

    Yu, Weili; Isimjan, Tayirjan; Lin, Bin; Takanabe, Kazuhiro

    2014-01-01

    Noble metals as cocatalysts for hydrogen evolution are widely investigated for semiconductor photocatalytic water splitting. In this paper, we present a novel way to attach not only noble metals, but also transitional metals onto CdS nanocrystals as cocatalysts for hydrogen evolution. The hydrogen evolution performances for each metal were compared and result shows that Pd attached CdS gives the highest hydrogen evolution rate of 250 μmol/h. The amounts of metal ions attached on the surface were measured by inductively coupled plasma optical emission spectrometry (ICP-OES). This work confirms that surface modification is a promising way of attaching cocatalysts onto semiconductor photocatalysts.

  13. In situ preparation, electrical and surface analytical characterization of pentacene thin film transistors

    Science.gov (United States)

    Lassnig, R.; Striedinger, B.; Hollerer, M.; Fian, A.; Stadlober, B.; Winkler, A.

    2015-01-01

    The fabrication of organic thin film transistors with highly reproducible characteristics presents a very challenging task. We have prepared and analyzed model pentacene thin film transistors under ultra-high vacuum conditions, employing surface analytical tools and methods. Intentionally contaminating the gold contacts and SiO2 channel area with carbon through repeated adsorption, dissociation, and desorption of pentacene proved to be very advantageous in the creation of devices with stable and reproducible parameters. We mainly focused on the device properties, such as mobility and threshold voltage, as a function of film morphology and preparation temperature. At 300 K, pentacene displays Stranski-Krastanov growth, whereas at 200 K fine-grained, layer-like film growth takes place, which predominantly influences the threshold voltage. Temperature dependent mobility measurements demonstrate good agreement with the established multiple trapping and release model, which in turn indicates a predominant concentration of shallow traps in the crystal grains and at the oxide-semiconductor interface. Mobility and threshold voltage measurements as a function of coverage reveal that up to four full monolayers contribute to the overall charge transport. A significant influence on the effective mobility also stems from the access resistance at the gold contact-semiconductor interface, which is again strongly influenced by the temperature dependent, characteristic film growth mode. PMID:25814770

  14. Theoretical studies of structural and electronic properties of overlayers on semiconductor surfaces

    International Nuclear Information System (INIS)

    Cakmak, M.

    1999-06-01

    In this thesis we report the results of ab initio density functional calculations of equilibrium atomic geometry, electronic states and chemical bonding for the adsorption of elemental S and H 2 S on chosen semiconductor surfaces. The results are in good agreement with the available experimental results and indicate the need for further experimental work. In Chapter 2 of this thesis, I describe the formalism of the ab initio pseudopotential theory and the computational procedures which are used in this thesis. In the following chapter, a few experimental techniques are discussed, which we subsequently use their results to compare with our theoretical calculated results. In Chapter 4 the passivation of S on InP(110) is investigated. Two sets of geometries are used; non-reacted geometries and reacted geometries. For non-reacted full-monolayer coverage, the epitaxially continued layer structure is found to be the most energetically favourable and it exhibits a good semiconducting nature. For an ordered reacted model with the adsorbate S atoms exchanged with their neighbouring P atoms, the average vertical distance between the top two layers is in agreement with x-ray standing wave analysis, but is characterized by a small band gap. In Chapter 5 adsorption of the H 2 S molecule on the InP(110), GaAs(110) and GaP(110) surfaces is investigated within a dissociative adsorption model. In general the adsorption of H 2 S on the three semiconductors shows similar behaviour. In Chapter 6 the adsorption of elemental S on Si(001) is investigated using three adsorption models; hemisulfide-(2 x 1) structure, monosulfide-(1 x 1) structure, and disulfide-(1 x 1) structure. An analysis of the surface free energy suggests that the monosulfide structure is more stable than the hemisulfide and disulfide structures. This result is also used to investigate the adsorption of elemental S on the Ge(001) surface. In Chapter 7, the adsorption of the H 2 S molecule on the Si(001) and Ge(001

  15. Changes in the surface electronic states of semiconductor fine particles induced by high energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yamaki, Tetsuya; Asai, Keisuke; Ishigure, Kenkichi [Tokyo Univ. (Japan); Shibata, Hiromi

    1997-03-01

    The changes in the surface electronic states of Q-sized semiconductor particles in Langmuir-Blodgett (LB) films, induced by high energy ion irradiation, were examined by observation of ion induced emission and photoluminescence (PL). Various emission bands attributed to different defect sites in the band gap were observed at the initial irradiation stage. As the dose increased, the emissions via the trapping sites decreased in intensity while the band-edge emission developed. This suggests that the ion irradiation would remove almost all the trapping sites in the band gap. The low energy emissions, which show a multiexponential decay, were due to a donor-acceptor recombination between the deeply trapped carriers. It was found that the processes of formation, reaction, and stabilization of the trapping sites would predominantly occur under the photooxidizing conditions. (author)

  16. Quantitative depth profiling of near surface semiconductor structures using ultra low energy SIMS analysis

    International Nuclear Information System (INIS)

    Elliner, D.I.

    1999-09-01

    The continual reduction in size of semiconductor structures and depths of junctions is putting a greater strain on characterization techniques. Accurate device and process modelling requires quantified electrical and dopant profiles from the topmost few nanometres. Secondary ion mass spectrometry (SIMS) is an analytical technique commonly used in the semiconductor industry to measure concentration depth profiles. To allow the quantification of the features that are closer to the surface, lower energy ions are employed, which also improves the available depth resolution. The development of the floating ion gun (FLIG) has made it possible to use sub keV beam energies on a routine basis, allowing quantified dopant profiles to be obtained within the first few nanometres of the surface. This thesis demonstrates that, when profiling with oxygen ion beams, greatest certainty in the retained dose is achieved at normal incidence, and when analysing boron accurate profile shapes are only obtained when the primary beam energy is less than half that of the implant. It was shown that it is now possible to profile, though with slower erosion rates and a limited dynamic range, with 100 eV oxygen (0 2 + ) ion beams. Profile features that had developed during rapid thermal annealing, that could only be observed when ultra low energy ion beams were used, were investigated using various analytical techniques. Explanations of the apparently inactive dopant were proposed, and included suggestions for cluster molecules. The oxide thickness of fully formed altered layers has also been investigated. The results indicate that a fundamental change in the mechanism of oxide formation occurs, and interfaces that are sharper than those grown by thermal oxidation can be produced using sub-keV ion beams. (author)

  17. Assembly, Structure, and Functionality of Metal-Organic Networks and Organic Semiconductor Layers at Surfaces

    Science.gov (United States)

    Tempas, Christopher D.

    Self-assembled nanostructures at surfaces show promise for the development of next generation technologies including organic electronic devices and heterogeneous catalysis. In many cases, the functionality of these nanostructures is not well understood. This thesis presents strategies for the structural design of new on-surface metal-organic networks and probes their chemical reactivity. It is shown that creating uniform metal sites greatly increases selectivity when compared to ligand-free metal islands. When O2 reacts with single-site vanadium centers, in redox-active self-assembled coordination networks on the Au(100) surface, it forms one product. When O2 reacts with vanadium metal islands on the same surface, multiple products are formed. Other metal-organic networks described in this thesis include a mixed valence network containing Pt0 and PtII and a network where two Fe centers reside in close proximity. This structure is stable to temperatures >450 °C. These new on-surface assemblies may offer the ability to perform reactions of increasing complexity as future heterogeneous catalysts. The functionalization of organic semiconductor molecules is also shown. When a few molecular layers are grown on the surface, it is seen that the addition of functional groups changes both the film's structure and charge transport properties. This is due to changes in both first layer packing structure and the pi-electron distribution in the functionalized molecules compared to the original molecule. The systems described in this thesis were studied using high-resolution scanning tunneling microscopy, non-contact atomic force microscopy, and X-ray photoelectron spectroscopy. Overall, this work provides strategies for the creation of new, well-defined on-surface nanostructures and adds additional chemical insight into their properties.

  18. Surface preparation for the heteroepitactic growth of ceramic thin films

    International Nuclear Information System (INIS)

    Norton, M.G.; Summerfelt, S.R.; Carter, C.B.

    1990-01-01

    The morphology, composition, and crystallographic orientation of the substrate influence the nucleation and growth of deposited thin films. A method for the preparation of controlled, characteristic surfaces is reported. The surfaces are suitable for the heteroepitactic growth of thin films. When used in the formation of electron-transparent thin foils, the substrates can be used to investigate the very early stages of film growth using transmission electron microscopy. The substrate preparation involves the cleaning and subsequent annealing to generate a surface consisting of a series of steps. The step terraces are formed on the energetically stable surface, and controlled nucleation and growth of films at step edges is found. The substrate materials prepared using this technique include (001) MgO, (001) SrTiO 3 , and (001) LaAlO 3

  19. Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Talkenberg, Florian, E-mail: florian.talkenberg@ipht-jena.de; Illhardt, Stefan; Schmidl, Gabriele; Schleusener, Alexander; Sivakov, Vladimir [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, D-07745 Jena (Germany); Radnóczi, György Zoltán; Pécz, Béla [Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege Miklós u. 29-33, H-1121 Budapest (Hungary); Dikhanbayev, Kadyrjan; Mussabek, Gauhar [Department of Physics and Engineering, al-Farabi Kazakh National University, 71 al-Farabi Ave., 050040 Almaty (Kazakhstan); Gudovskikh, Alexander [Nanotechnology Research and Education Centre, St. Petersburg Academic University, Russian Academy of Sciences, Hlopina Str. 8/3, 194021 St. Petersburg (Russian Federation)

    2015-07-15

    Semiconductor–insulator–semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al{sub 2}O{sub 3} on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiO{sub x}) layer was detected at the Si/Al{sub 2}O{sub 3} interface. The SiO{sub x} formation depends on the initial growth behavior of Al{sub 2}O{sub 3} and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al{sub 2}O{sub 3} and avoid the SiO{sub x} generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al{sub 2}O{sub 3} interface states.

  20. Ion-induced nanopatterns on semiconductor surfaces investigated by grazing incidence x-ray scattering techniques

    Energy Technology Data Exchange (ETDEWEB)

    Carbone, D; Metzger, T H [ID01, ESRF, 6 rue Jules Horowitz, F-38043 Grenoble Cedex (France); Biermanns, A; Pietsch, U [Festkoerperphysik, Universitaet Siegen, D-57068 Siegen (Germany); Ziberi, B; Frost, F [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., D-04318 Leipzig (Germany); Plantevin, O [Universite Paris-Sud, Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR 8609, F-91405 Orsay (France)], E-mail: gcarbone@esrf.fr

    2009-06-03

    In this review we cover and describe the application of grazing incidence x-ray scattering techniques to study and characterize nanopattern formation on semiconductor surfaces by ion beam erosion under various conditions. It is demonstrated that x-rays under grazing incidence are especially well suited to characterize (sub)surface structures on the nanoscale with high spatial and statistical accuracy. The corresponding theory and data evaluation is described in the distorted wave Born approximation. Both ex situ and in situ studies are presented, performed with the use of a specially designed sputtering chamber which allows us to follow the temporal evolution of the nanostructure formation. Corresponding results show a general stabilization of the ordering wavelength and the extension of the ordering as a function of the ion energy and fluence as predicted by theory. The in situ measurements are especially suited to study the early stages of pattern formation, which in some cases reveal a transition from dot to ripple formation. For the case of medium energy ions crystalline ripples are formed buried under a semi-amorphous thick layer with a ripple structure at the surface being conformal with the crystalline/amorphous interface. Here, the x-ray techniques are especially advantageous since they are non-destructive and bulk-sensitive by their very nature. In addition, the GI x-ray techniques described in this review are a unique tool to study the evolving strain, a topic which remains to be explored both experimentally and theoretically.

  1. Effect of preparation conditions on physicochemical, surface and catalytic properties of cobalt ferrite prepared by coprecipitation

    Energy Technology Data Exchange (ETDEWEB)

    El-Shobaky, G.A., E-mail: elshobaky@yahoo.co [Physical Chemistry Department, National Research Center, Dokki, Cairo (Egypt); Turky, A.M.; Mostafa, N.Y.; Mohamed, S.K. [Chemistry Department, Faculty of Science, Suez Canal University, Ismailia 41522 (Egypt)

    2010-03-18

    Cobalt ferrite nanoparticles were prepared via thermal treatment of cobalt-iron mixed hydroxides at 400-600 {sup o}C. The mixed hydroxides were coprecipitated from their nitrates solutions using NaOH as precipitating agent. The effects of pH and temperature of coprecipitation and calcination temperature on the physicochemical, surface and catalytic properties of the prepared ferrites were studied. The prepared systems were characterized using TG, DTG, DTA, chemical analysis, atomic absorption spectroscopy (AAS), X-ray diffraction (XRD), energy dispersive X-ray (EDX) as well as surface and texture properties based on nitrogen adsorption-desorption isotherms. The prepared cobalt ferrites were found to be mesoporous materials that have crystallite size ranges between 8 and 45 nm. The surface and catalytic properties of the produced ferrite phase were strongly dependent on coprecipitation conditions of the mixed hydroxides and on their calcination temperature.

  2. "Liquid-liquid-solid"-type superoleophobic surfaces to pattern polymeric semiconductors towards high-quality organic field-effect transistors.

    Science.gov (United States)

    Wu, Yuchen; Su, Bin; Jiang, Lei; Heeger, Alan J

    2013-12-03

    Precisely aligned organic-liquid-soluble semiconductor microwire arrays have been fabricated by "liquid-liquid-solid" type superoleophobic surfaces directed fluid drying. Aligned organic 1D micro-architectures can be built as high-quality organic field-effect transistors with high mobilities of >10 cm(2) ·V(-1) ·s(-1) and current on/off ratio of more than 10(6) . All these studies will boost the development of 1D microstructures of organic semiconductor materials for potential application in organic electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

    International Nuclear Information System (INIS)

    Li Yali; Li Chunyang; He Deyan; Li Junshuai

    2009-01-01

    We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ∼4.6 x 10 -4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ∼1.21 x 10 21 cm -3 and a lower mobility of ∼11.4 cm 2 V -1 s -1 . More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.

  4. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  5. Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

    International Nuclear Information System (INIS)

    Chao, K.; Zhang, Z.; Ebert, P.; Shih, C.K.

    1999-01-01

    Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism. copyright 1999 The American Physical Society

  6. Anisotropic surface hole-transport property of triphenylamine-derivative single crystal prepared by solution method

    Energy Technology Data Exchange (ETDEWEB)

    Umeda, Minoru, E-mail: mumeda@vos.nagaokaut.ac.jp [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Katagiri, Mitsuhiko; Shironita, Sayoko [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Nagayama, Norio [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Ricoh Company, Ltd., Nishisawada, Numazu, Shizuoka 410-0007 (Japan)

    2016-12-01

    Highlights: • A hole transport molecule was investigated based on its electrochemical redox characteristics. • The solubility and supersolubility curves of the molecule were measured in order to prepare a large crystal. • The polarization micrograph and XRD results revealed that a single crystal was obtained. • An anisotropic surface conduction, in which the long-axis direction exceeds that of the amorphous layer, was observed. • The anisotropic surface conduction was well explained by the molecular stacked structure. - Abstract: This paper reports the anisotropic hole transport at the triphenylamine-derivative single crystal surface prepared by a solution method. Triphenylamine derivatives are commonly used in a hole-transport material for organic photoconductors of laser-beam printers, in which the materials are used as an amorphous form. For developing organic photovoltaics using the photoconductor’s technology, preparation of a single crystal seems to be a specific way by realizing the high mobility of an organic semiconductor. In this study, a single crystal of 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine (TPA) was prepared and its anisotropic hole-transport property measured. First, the hole-transport property of the TPA was investigated based on its chemical structure and electrochemical redox characteristics. Next, a large-scale single crystal formation at a high rate was developed by employing a solution method based on its solubility and supersolubility curves. The grown TPA was found to be a single crystal based on the polarization micrograph observation and crystallographic analysis. For the TPA single crystal, an anisotropic surface conduction was found, which was well explained by its molecular stack structure. The measured current in the long-axis direction is one order of magnitude greater than that of amorphous TPA.

  7. Crystal Structure, Optical, and Electrical Properties of SnSe and SnS Semiconductor Thin Films Prepared by Vacuum Evaporation Techniques for Solar Cell Applications

    Science.gov (United States)

    Ariswan; Sutrisno, H.; Prasetyawati, R.

    2017-05-01

    Thin films of SnSe and SnS semiconductors had been prepared by vacuum evaporation techniques. All prepared samples were characterized on their structure, optical, and electrical properties in order to know their application in technology. The crystal structure of SnSe and SnS was determined by X-Ray Diffraction (XRD) instrument. The morphology and chemical composition were obtained by Scanning Electron Microscopy (SEM) coupled with Energy Dispersive of X-Ray Analysis (EDAX). The optical property such as band gap was determined by DR-UV-Vis (Diffuse Reflectance-Ultra Violet-Visible) spectroscopy, while the electrical properties were determined by measuring the conductivity by four probes method. The characterization results indicated that both SnSe and SnS thin films were polycrystalline. SnSe crystallized in an orthorhombic crystal system with the lattice parameters of a = 11.47 Å, b = 4.152 Å and c = 4.439 Å, while SnS had an orthorhombic crystal system with lattice parameters of a = 4.317 Å, b = 11.647 Å and c = 3.981 Å. Band gaps (Eg) of SnSe and SnS were 1.63 eV and 1.35 eV, respectively. Chemical compositions of both thin films were non-stoichiometric. Molar ratio of Sn : S was close to ideal which was 1 : 0.96, while molar ratio of Sn : S was 1 : 0.84. The surface morphology described the arrangement of the grains on the surface of the thin film with sizes ranging from 0.2 to 0.5 microns. Color similarity on the surface of the SEM images proved a homogenous thin layer.

  8. Optical properties of single semiconductor nanowires and nanowire ensembles. Probing surface physics by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pfueller, Carsten

    2011-06-27

    This thesis presents a detailed investigation of the optical properties of semiconductor nanowires (NWs) in general and single GaN NWs and GaN NW ensembles in particular by photoluminescence (PL) spectroscopy. NWs are often considered as potential building blocks for future nanometer-scaled devices. This vision is based on several attractive features that are generally ascribed to NWs. For instance, they are expected to grow virtually free of strain and defects even on substrates with a large structural mismatch. In the first part of the thesis, some of these expectations are examined using semiconductor NWs of different materials. On the basis of the temperature-dependent PL of Au- and selfassisted GaAs/(Al,Ga)As core-shell NWs, the influence of foreign catalyst particles on the optical properties of NWs is investigated. For the Au-assisted NWs, we find a thermally activated, nonradiative recombination channel, possibly related to Auatoms incorporated from the catalyst. These results indicate the limited suitability of catalyst-assisted NWs for optoelectronic applications. The effect of the substrate choice is studied by comparing the PL of ZnO NWs grown on Si, Al{sub 2}O{sub 3}, and ZnO substrates. Their virtually identical optical characteristics indicate that the synthesis of NWs may indeed overcome the constraints that limit the heteroepitaxial deposition of thin films. The major part of this thesis discusses the optical properties of GaN NWs grown on Si substrates. The investigation of the PL of single GaN NWs and GaN NW ensembles reveals the significance of their large surface-to-volume ratio. Differences in the recombination behavior of GaNNW ensembles and GaN layers are observed. First, the large surface-to-volume ratio is discussed to be responsible for the different recombination mechanisms apparent in NWs. Second, certain optical features are only found in the PL of GaN NWs, but not in that of GaN layers. An unexpected broadening of the donor

  9. HIGH VELOCITY THERMAL GUN FOR SURFACE PREPARATION AND TREATMENT

    Directory of Open Access Journals (Sweden)

    I.A. Gorlach

    2012-01-01

    Full Text Available Many surface preparation and treatment processes utilise compressed air to propel particles against surfaces in order to clean and treat them. The effectiveness of the processes depends on the velocity of the particles, which in turn depends on the pressure of the compressed air. This paper describes a thermal gun built on the principles of High Velocity Air Fuel (HVAF and High Velocity Oxy Fuel (HVOF processes. The designed apparatus can be used for abrasive blasting, coating of surfaces, cutting of rocks, removing rubber from mining equipment, cleaning of contaminations etc.

  10. Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

    1999-01-01

    Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

  11. Preparation and characterisation of glass surfaces for experimental purposes

    International Nuclear Information System (INIS)

    Serruys, Y.

    1986-01-01

    Experimental investigation of glasses, applied especially to the prevision of the behaviour of vitrified nuclear wastes, requires the preparation of well-defined and reproducibles surfaces, in order to separate the investigated phenomena from artifacts due to surface anomalies and to allow a valuable comparison between results obtained in different laboratories. The aim of the present report is to determine which characters, both physical and chemical, of glass surfaces, have to be controlled, because of their influence upon the investigated phenomena or the experimental processes employed in the investigation. A method is then presented for a surface preparation giving good guaranties of quality and reproducibility. The physical and chemical aspects of surface characterisation are successively considered. The relevant characters and their importance are described, then the corresponding techniques of characterisation are reviewed and it has been attempted to propose a set of techniques allowing a characterisation as complete as possible for laboratory purposes. A preparation method for experimental sample, aiming to satisfy all the previously defined criteria, is then proposed, and present results obtained with this method are described [fr

  12. The influence of adherent surface preparation on bond durability

    International Nuclear Information System (INIS)

    Rider, A.N.; Arnott, D.R.; Olsson-Jacques, C.L.

    1999-01-01

    Full text: One of the major factors limiting the use of adhesive bonding is the problem associated with the production of adhesive joints that can maintain their initial strength over long periods of time in hostile environments. It is well known that the adherent surface preparation method is critical to the formation of a durable adhesive bond. Work presented in this paper focuses on the critical aspects of the surface preparation of aluminium employed for the manufacture of aluminium-epoxy joints. The surface preparation procedure examined is currently employed by the RAAF for repairs requiring metal to adhesive bonding. The influence of each step in the surface preparation on the ultimate bond durability performance of the adhesive joint is examined by a combination of methods. Double cantilever wedge style adhesive joints are loaded in mode 1 opening and then exposed to a humid environment. X-ray photoelectron spectroscopy (XPS) and contact angle measurements of the aluminium adherent before bonding provides information about the adherent surface chemistry. XPS is also employed to analyse the surfaces of the bonded specimens post failure to establish the locus of fracture. This approach provides important information regarding the properties influencing bond durability as well as the bond failure mechanisms. A two step bond degradation model was developed to qualitatively describe the observed bond durability performance and fracture data. The first step involves controlled moisture ingress by stress induced microporosity of the adhesive in the interfacial region. The second step determines the locus of fracture through the relative dominance of one of three competitive processes, viz: oxide degradation, polymer desorption, or polymer degradation. A key element of the model is the control exercised over the interfacial microporosity by the combined interaction of stress and the relative densities of strong and weak linkages at the metal to adhesive interface

  13. The optical constants of the organic thin films in the case of xanthats adsorption at the surface of semiconductors minerals

    International Nuclear Information System (INIS)

    Todoran, Radu; Todoran, Daniela

    2008-01-01

    The paper present the determinations of some kinetic parameters that characterize the kinetics of the adsorption phenomenon of some organic xanthate molecule on the surface of some natural semiconductor mineral (galena, sphalerite) in order to understand the inward mechanism of this phenomenon. Among the methods of inquiry that allow kinetics determination in situ the optical ones were chosen relying on the change of the liquid-mineral semiconductor interface, and permitting continuous inquires without disturbing the inward development of the processes. Into the computation, we took into the consideration the physical values which feature the roughness of the solid surface, the diffusion into liquid media and the energetic non-homogeneities of the surface. The R s /R p =f(θ) characteristic helps us to establish the thickness of the adsorbed layer, as well as to determine the optical parameters of the thin film. the experimental results allow us to get some information on the mineral and mineral-solution of xanthate, as well allow us to get some information on the parameters which, in correlation with other proportions experimentally determined - could had as to estimations of the dynamic of the surface of a semiconductor solid body. (Author)

  14. Extending the detection limit of dopants for focused ion beam prepared semiconductor specimens examined by off-axis electron holography

    DEFF Research Database (Denmark)

    Cooper, David; Rivallin, Pierrette; Hartmann, Jean-Michel

    2009-01-01

    Silicon specimens containing p-n junctions have been prepared for examination by off-axis electron holography using focused ion beam (FIB) milling. FIB milling modifies the surfaces of the specimens due to gallium implantation and the creation of defects which has the effect of reducing the active...

  15. Device Physics of Narrow Gap Semiconductors

    CERN Document Server

    Chu, Junhao

    2010-01-01

    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  16. Rational design of organic semiconductors for texture control and self-patterning on halogenated surfaces

    KAUST Repository

    Ward, Jeremy W.; Li, Ruipeng; Obaid, Abdulmalik; Payne, Marcia M.; Smilgies, Detlef Matthias; Anthony, John Edward; Amassian, Aram; Jurchescu, Oana D.

    2014-01-01

    new materials. Here, the influence of the interactions at the interface between a halogenated organic semiconductor (OSC) thin film and a halogenated self-assembled monolayer on the formation of the crystalline texture directly affecting

  17. Disturbance induced by surface preparation on instrumented indentation test

    International Nuclear Information System (INIS)

    Li, Yugang; Kanouté, Pascale; François, Manuel

    2015-01-01

    Surface preparation, which may induce considerable sample disturbance, plays an important role in instrumented indentation test (IIT). In this study, the sample disturbance (mainly divided into residual stresses and plastic strain) induced by the surface preparation process of instrumented indentation test specimens were investigated with both experimental tests and numerical simulations. Grazing incidence X-ray diffractions (GIXRD) and uniaxial tensile tests were conducted for characterizing the residual stresses and high plastic strain in the top surface layers of a carefully mechanically polished indentation sample, which, in the present work, is made of commercially pure titanium. Instrumented indentation tests and the corresponding finite element simulations were performed as well. For comparison, a reference sample (carefully mechanically polished & electrolytically polished) which represents the raw material was prepared and tested. Results showed that a careful mechanical polishing procedure can effectively reduce the level of residual stresses induced by this process. However, the high plastic strain in the surface region imposed by the polishing process is significant. The induced plastic strain can affect a depth up to 5 µm, which is deeper than the maximum penetration depth h max (3 µm) used for the instrumented indentation tests. In the near surface layer (in the range of depth about 350 nm), the plastic strain levels are fairly high. In the very top layer, the plastic strain was even estimated to reach more than 60%. The simultaneous use of indentation tests and numerical simulations showed that the existence of high plastic strain in the surface region will make the load vs depth (P–h) curve shift upwards, the contact hardness (H) increase and the contact stiffness (S) decrease

  18. Disturbance induced by surface preparation on instrumented indentation test

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yugang, E-mail: yugang.li@utt.fr [Université de Technologie de Troyes (UTT), ICD-LASMIS, UMR CNRS 6281, 12, rue Marie Curie-CS 42060, 10010 Troyes Cedex (France); Kanouté, Pascale, E-mail: pascale.kanoute@onera.fr [Université de Technologie de Troyes (UTT), ICD-LASMIS, UMR CNRS 6281, 12, rue Marie Curie-CS 42060, 10010 Troyes Cedex (France); The French Aerospace Lab (ONERA), DMSM/MCE, 29 avenue de la Division Leclerc-BP 72, F-92322 Chatillon Cedex (France); François, Manuel, E-mail: manuel.francois@utt.fr [Université de Technologie de Troyes (UTT), ICD-LASMIS, UMR CNRS 6281, 12, rue Marie Curie-CS 42060, 10010 Troyes Cedex (France)

    2015-08-26

    Surface preparation, which may induce considerable sample disturbance, plays an important role in instrumented indentation test (IIT). In this study, the sample disturbance (mainly divided into residual stresses and plastic strain) induced by the surface preparation process of instrumented indentation test specimens were investigated with both experimental tests and numerical simulations. Grazing incidence X-ray diffractions (GIXRD) and uniaxial tensile tests were conducted for characterizing the residual stresses and high plastic strain in the top surface layers of a carefully mechanically polished indentation sample, which, in the present work, is made of commercially pure titanium. Instrumented indentation tests and the corresponding finite element simulations were performed as well. For comparison, a reference sample (carefully mechanically polished & electrolytically polished) which represents the raw material was prepared and tested. Results showed that a careful mechanical polishing procedure can effectively reduce the level of residual stresses induced by this process. However, the high plastic strain in the surface region imposed by the polishing process is significant. The induced plastic strain can affect a depth up to 5 µm, which is deeper than the maximum penetration depth h{sub max} (3 µm) used for the instrumented indentation tests. In the near surface layer (in the range of depth about 350 nm), the plastic strain levels are fairly high. In the very top layer, the plastic strain was even estimated to reach more than 60%. The simultaneous use of indentation tests and numerical simulations showed that the existence of high plastic strain in the surface region will make the load vs depth (P–h) curve shift upwards, the contact hardness (H) increase and the contact stiffness (S) decrease.

  19. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  20. Facile preparation of superhydrophobic surfaces based on metal oxide nanoparticles

    Science.gov (United States)

    Bao, Xue-Mei; Cui, Jin-Feng; Sun, Han-Xue; Liang, Wei-Dong; Zhu, Zhao-Qi; An, Jin; Yang, Bao-Ping; La, Pei-Qing; Li, An

    2014-06-01

    A novel method for fabrication of superhydrophobic surfaces was developed by facile coating various metal oxide nanoparticles, including ZnO, Al2O3 and Fe3O4, on various substrates followed by treatment with polydimethylsiloxane (PDMS) via chemical vapor deposition (CVD) method. Using ZnO nanoparticles as a model, the changes in the surface chemical composition and crystalline structures of the metal oxide nanoparticles by PDMS treatment were investigated by X-ray photoelectron spectroscopy (XPS), X-ray powder diffraction (XRD) and Fourier transform infrared (FTIR) analysis. The results show that the combination of the improved surface roughness generated from of the nanoparticles aggregation with the low surface-energy of silicon-coating originated from the thermal pyrolysis of PDMS would be responsible for the surface superhydrophobicity. By a simple dip-coating method, we show that the metal oxide nanoparticles can be easily coated onto the surfaces of various textural and dimensional substrates, including glass slide, paper, fabric or sponge, for preparation of superhydrophobic surfaces for different purpose. The present strategy may provide an inexpensive and new route to surperhydrophobic surfaces, which would be of technological significance for various practical applications especially for separation of oils or organic contaminates from water.

  1. Facile preparation of superhydrophobic surfaces based on metal oxide nanoparticles

    International Nuclear Information System (INIS)

    Bao, Xue-Mei; Cui, Jin-Feng; Sun, Han-Xue; Liang, Wei-Dong; Zhu, Zhao-Qi; An, Jin; Yang, Bao-Ping; La, Pei-Qing; Li, An

    2014-01-01

    A novel method for fabrication of superhydrophobic surfaces was developed by facile coating various metal oxide nanoparticles, including ZnO, Al 2 O 3 and Fe 3 O 4 , on various substrates followed by treatment with polydimethylsiloxane (PDMS) via chemical vapor deposition (CVD) method. Using ZnO nanoparticles as a model, the changes in the surface chemical composition and crystalline structures of the metal oxide nanoparticles by PDMS treatment were investigated by X-ray photoelectron spectroscopy (XPS), X-ray powder diffraction (XRD) and Fourier transform infrared (FTIR) analysis. The results show that the combination of the improved surface roughness generated from of the nanoparticles aggregation with the low surface-energy of silicon-coating originated from the thermal pyrolysis of PDMS would be responsible for the surface superhydrophobicity. By a simple dip-coating method, we show that the metal oxide nanoparticles can be easily coated onto the surfaces of various textural and dimensional substrates, including glass slide, paper, fabric or sponge, for preparation of superhydrophobic surfaces for different purpose. The present strategy may provide an inexpensive and new route to surperhydrophobic surfaces, which would be of technological significance for various practical applications especially for separation of oils or organic contaminates from water.

  2. Facile preparation of superhydrophobic surfaces based on metal oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Xue-Mei; Cui, Jin-Feng; Sun, Han-Xue; Liang, Wei-Dong; Zhu, Zhao-Qi; An, Jin; Yang, Bao-Ping; La, Pei-Qing; Li, An, E-mail: lian2010@lut.cn

    2014-06-01

    A novel method for fabrication of superhydrophobic surfaces was developed by facile coating various metal oxide nanoparticles, including ZnO, Al{sub 2}O{sub 3} and Fe{sub 3}O{sub 4}, on various substrates followed by treatment with polydimethylsiloxane (PDMS) via chemical vapor deposition (CVD) method. Using ZnO nanoparticles as a model, the changes in the surface chemical composition and crystalline structures of the metal oxide nanoparticles by PDMS treatment were investigated by X-ray photoelectron spectroscopy (XPS), X-ray powder diffraction (XRD) and Fourier transform infrared (FTIR) analysis. The results show that the combination of the improved surface roughness generated from of the nanoparticles aggregation with the low surface-energy of silicon-coating originated from the thermal pyrolysis of PDMS would be responsible for the surface superhydrophobicity. By a simple dip-coating method, we show that the metal oxide nanoparticles can be easily coated onto the surfaces of various textural and dimensional substrates, including glass slide, paper, fabric or sponge, for preparation of superhydrophobic surfaces for different purpose. The present strategy may provide an inexpensive and new route to surperhydrophobic surfaces, which would be of technological significance for various practical applications especially for separation of oils or organic contaminates from water.

  3. Surface Preparation of InAs (110 Using Atomic Hydrogen

    Directory of Open Access Journals (Sweden)

    T.D. Veal

    2002-06-01

    Full Text Available Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(110 surfaces.  X-ray photoelectron spectroscopy (XPS was used to obtain chemical composition and chemical state information about the surface, before and after the removal of the atmospheric contamination. Low energy electron diffraction (LEED and high-resolution electron-energy-loss spectroscopy (HREELS were also used, respectively, to determine the surface reconstruction and degree of surface ordering, and to probe the adsorbed contaminant vibrational modes and the collective excitations of the clean surface. Clean, ordered and stoichiometric  InAs(110-(1×1 surfaces were obtained by exposure to thermally generated atomic hydrogen at a substrate temperature as low as 400ºC.  Semi-classical dielectric theory analysis of HREEL spectra of the phonon and plasmon excitations of the clean surface indicate that no electronic damage or dopant passivation were induced by the surface preparation method.

  4. The Surface Imprinted Polystyrene Beads Prepared via Emulsion Templates

    Institute of Scientific and Technical Information of China (English)

    Guo Xiang CHENG; Guang Ling PEI; Ling Gang ZENG; Li Yong ZHANG; Chao LIU

    2004-01-01

    In this paper, the surface imprinted cross-linked polystyrene beads were prepared via suspension polymerization with styrene (St), divinylbezene (DVB), polyvinyl alcohol (PVA1788), the mixture of Span 85 and xylene or the mixture of Span 85 and paraffin as monomer, cross-linking agent, dispersion stabilizer and templates, respectively. The results indicate that there are dense cavities on the surface of beads, and the diameter and density of cavity are related with the composition and amount of emulsion template. The forming mechanism of cavity from thermodynamics and dynamics was proposed.

  5. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  6. Theory of tamm surface states on the boundary between Hgsub(1-x)Cdsub(x)Te type semimetal and narrow-gap semiconductor

    International Nuclear Information System (INIS)

    Mekhtiyev, M.A.; Kalina, V.A.

    1980-01-01

    The conditions of appearance of tamm surface states and their energy spectrum on the boundary of semimetals and narrow-gap semiconductors are considered. By the Green function method the equation for surface state energy is obtained. The solution of the latter is analyzed in particular cases when energy of heavy hole zones of the semimetal and semiconductor is the same and when the heavy hole gap of the semiconductor is shifted down relatively to the semimetal of the same name gap as well as accurate computer calculation. It is shown that neither in parabolic limits, nor in cases of a strongly unparabolic semiconductor (semimetal) and a parabolic semimetal (semiconductor) the equation obtained has no solutions at small quasipulse values i.e. there are no surface states. In the case when the heavy hole zone of a semiconductor is shifted down for the value of the order of narrow-gap semiconductor the effective mass of surface states turns to be twice heavier than that of the semimetal volumetrical electrons [ru

  7. Spatial separation of electrons and holes for enhancing the gas-sensing property of a semiconductor: ZnO/ZnSnO3 nanorod arrays prepared by a hetero-epitaxial growth

    Science.gov (United States)

    Wang, Ying; Gao, Peng; Sha, Linna; Chi, Qianqian; Yang, Lei; Zhang, Jianjiao; Chen, Yujin; Zhang, Milin

    2018-04-01

    The construction of semiconductor composites is known as a powerful method used to realize the spatial separation of electrons and the holes in them, which can result in more electrons or holes and increase the dispersion of oxygen ions ({{{{O}}}2}- and O - ) (one of the most critical factors for their gas-sensing properties) on the surface of the semiconductor gas sensor. In this work, using 1D ZnO/ZnSnO3 nanoarrays as an example, which are prepared through a hetero-epitaxial growing process to construct a chemically bonded interface, the above strategy to attain a better semiconductor gas-sensing property has been realized. Compared with single ZnSnO3 nanotubes and no-matching ZnO/ZnSnO3 nanoarrays gas sensors, it has been proven by x-ray photoelectron spectroscopy and photoluminescence spectrum examination that the as-obtained ZnO/ZnSnO3 sensor showed a greatly increased quantity of active surface electrons with exceptional responses to trace target gases and much lower optimum working temperatures (less than about 170 °C). For example, the as-obtained ZnO/ZnSnO3 sensor exhibited an obvious response and short response/recovery time (less than 10 s) towards trace H2S gas (a detection limit down to 700 ppb). The high responses and dynamic repeatability observed in these sensors reveal that the strategy based on the as-presented electron and hole separation is reliable for improving the gas-sensing properties of semiconductors.

  8. Preparation of XH-3001 floodgate type of calibration surface sources

    International Nuclear Information System (INIS)

    Lin Hui; Zhang Fenglan

    2005-10-01

    The preparation of a large sized (active area: 100 mm x 150 mm) calibration sources by oxide film filling of aluminum is introduced. The influence of current densities, oxidation time, filling time, the pH, the concentration and the consumption of filling solution on surface emission rate of the source is studied. The surface emission rate, adhensiveness and uniformity of the source are also tested. The testing results indicate that the surface emission rate of source is 1500-3500 (2π·s) -1 , the uniformity of the source is better than ±10%, the activity of the source removed with wipe test is less than 200 Bq. The large sized source have been used for calibrating the apparatus in Qinshan Nuclear Power Station. (authors)

  9. Photocatalysis of irradiated semiconductor surfaces: Its application to water splitting and some organic reactions

    Energy Technology Data Exchange (ETDEWEB)

    Sakata, T

    1985-05-01

    Hydrogen production from organic compounds and water was investigated using powdered semiconductor photocatalysts. The complete decomposition observed for several organic compounds demonstrated that water is involved in the reactions as an oxidizing agent. Photocatalyses of dyes and semiconductors were found to be applicable to amino acid synthesis. The quantum yields of photocatalytic amino acid synthesis using visible light are about 20%-40% in the absence of a metal catalyst such as platinum. Moreover the reactions are highly selective and depend strongly on the type of semiconductor. This method was applied to the asymmetric synthesis of amino acids using asymmetric catalysts. Rather high optical yields of 50% were achieved for the synthesis of L-phenylalanine.

  10. Soft liquid phase adsorption for fabrication of organic semiconductor films on wettability patterned surfaces.

    Science.gov (United States)

    Watanabe, Satoshi; Akiyoshi, Yuri; Matsumoto, Mutsuyoshi

    2014-01-01

    We report a soft liquid-phase adsorption (SLPA) technique for the fabrication of organic semiconductor films on wettability-patterned substrates using toluene/water emulsions. Wettability-patterned substrates were obtained by the UV-ozone treatment of self-assembled monolayers of silane coupling agents on glass plates using a metal mask. Organic semiconductor polymer films were formed selectively on the hydrophobic part of the wettability-patterned substrates. The thickness of the films fabricated by the SLPA technique is significantly larger than that of the films fabricated by dip-coating and spin-coating techniques. The film thickness can be controlled by adjusting the volume ratio of toluene to water, immersion angle, immersion temperature, and immersion time. The SLPA technique allows for the direct production of organic semiconductor films on wettability-patterned substrates with minimized material consumption and reduced number of fabrication steps.

  11. Surface preparation and coupling in plastic scintillator dosimetry

    International Nuclear Information System (INIS)

    Ayotte, Guylaine; Archambault, Louis; Gingras, Luc; Lacroix, Frederic; Beddar, A. Sam; Beaulieu, Luc

    2006-01-01

    One way to improve the performance of scintillation dosimeters is to increase the light-collection efficiency at the coupling interfaces of the detector system. We performed a detailed study of surface preparation of scintillating fibers and their coupling with clear optical fibers to minimize light loss and increase the amount of light collected. We analyzed fiber-surface polishing with aluminum oxide sheets, coating fibers with magnesium oxide, and the use of eight different coupling agents (air, three optical gels, an optical curing agent, ultraviolet light, cyanoacrylate glue, and acetone). We prepared 10 scintillating fiber and clear optical fiber light guide samples to test different coupling methods. To test the coupling, we first cut both the scintillating fiber and the clear optical fiber. Then, we cleaned and polished both ends of both fibers. Finally, we coupled the scintillating fiber with the clear optical fiber in either a polyethylene jacket or a V-grooved support depending on the coupling agent used. To produce more light, we used an ultraviolet lamp to stimulate scintillation. A typical series of similar couplings showed a standard deviation in light-collection efficiency of 10%. This can be explained by differences in the surface preparation quality and alignment of the scintillating fiber with the clear optical fiber. Absence of surface polishing reduced the light collection by approximately 40%, and application of magnesium oxide on the proximal end of the scintillating fiber increased the amount of light collected from the optical fiber by approximately 39%. Of the coupling agents, we obtained the best results using one of the optical gels. Because a large amount of the light produced inside a scintillator is usually lost, better light-collection efficiency will result in improved sensitivity

  12. Reverse Non-Equilibrium Molecular Dynamics Demonstrate That Surface Passivation Controls Thermal Transport at Semiconductor-Solvent Interfaces.

    Science.gov (United States)

    Hannah, Daniel C; Gezelter, J Daniel; Schaller, Richard D; Schatz, George C

    2015-06-23

    We examine the role played by surface structure and passivation in thermal transport at semiconductor/organic interfaces. Such interfaces dominate thermal transport in semiconductor nanomaterials owing to material dimensions much smaller than the bulk phonon mean free path. Utilizing reverse nonequilibrium molecular dynamics simulations, we calculate the interfacial thermal conductance (G) between a hexane solvent and chemically passivated wurtzite CdSe surfaces. In particular, we examine the dependence of G on the CdSe slab thickness, the particular exposed crystal facet, and the extent of surface passivation. Our results indicate a nonmonotonic dependence of G on ligand-grafting density, with interfaces generally exhibiting higher thermal conductance for increasing surface coverage up to ∼0.08 ligands/Å(2) (75-100% of a monolayer, depending on the particular exposed facet) and decreasing for still higher coverages. By analyzing orientational ordering and solvent penetration into the ligand layer, we show that a balance of competing effects is responsible for this nonmonotonic dependence. Although the various unpassivated CdSe surfaces exhibit similar G values, the crystal structure of an exposed facet nevertheless plays an important role in determining the interfacial thermal conductance of passivated surfaces, as the density of binding sites on a surface determines the ligand-grafting densities that may ultimately be achieved. We demonstrate that surface passivation can increase G relative to a bare surface by roughly 1 order of magnitude and that, for a given extent of passivation, thermal conductance can vary by up to a factor of ∼2 between different surfaces, suggesting that appropriately tailored nanostructures may direct heat flow in an anisotropic fashion for interface-limited thermal transport.

  13. Preparation of Bioactive Titanium Surfaces via Fluoride and Fibronectin Retention

    Directory of Open Access Journals (Sweden)

    Carlos Nelson Elias

    2012-01-01

    Full Text Available Statement of Problem. The chemical or topographic modification of the dental implant surface can affect bone healing, promote accelerated osteogenesis, and increase bone-implant contact and bonding strength. Objective. In this work, the effects of dental implant surface treatment and fibronectin adsorption on the adhesion of osteoblasts were analyzed. Materials and Methods. Two titanium dental implants (Porous-acid etching and PorousNano-acid etching followed by fluoride ion modification were characterized by high-resolution scanning electron microscopy, atomic force microscopy, and X-ray diffraction before and after the incorporation of human plasma fibronectin (FN. The objective was to investigate the biofunctionalization of these surfaces and examine their effects on the interaction with osteoblastic cells. Results. The evaluation techniques used showed that the Porous and PorousNano implants have similar microstructural characteristics. Spectrophotometry demonstrated similar levels of fibronectin adsorption on both surfaces (80%. The association indexes of osteoblastic cells in FN-treated samples were significantly higher than those in samples without FN. The radioactivity values associated with the same samples, expressed as counts per minute (cpm, suggested that FN incorporation is an important determinant of the in vitro cytocompatibility of the surfaces. Conclusion. The preparation of bioactive titanium surfaces via fluoride and FN retention proved to be a useful treatment to optimize and to accelerate the osseointegration process for dental implants.

  14. Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

    Energy Technology Data Exchange (ETDEWEB)

    Gregušová, D., E-mail: Dagmar.Gregusova@savba.sk [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Gucmann, F.; Kúdela, R. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Mičušík, M. [Polymer Institute of Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84541 (Slovakia); Stoklas, R.; Válik, L. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Greguš, J. [Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynská dolina, Bratislava SK-84248 (Slovakia); Blaho, M. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Kordoš, P. [Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology STU, Ilkovičova 3, Bratislava SK-81219 (Slovakia)

    2017-02-15

    Highlights: • AlGaAs/InGaAs/GaAs-based metal oxide semiconductor transistors-MOSHFET. • Thin Al-layer deposited in-situ and oxidize in air – gate insulator. • MOSHFET vs HFET transistor properties, density of traps evaluated. - Abstract: GaAs-based heterostructures exhibit excellent carrier transport properties, mainly the high carrier velocity. An AlGaAs-GaAs heterostructure field-effect transistor (HFET) with an InGaAs channel was prepared using metal-organic chemical vapor deposition (MOVPE). An AlOx layer was formed on the AlGaAs barrier layer by the air-assisted oxidation of a thin Al layer deposited in-situ in an MOVPE reactor immediately after AlGaAs/InGaAs growth. The HFETs and MOSHFETs exhibited a very low trap state density in the order of 10{sup 11} cm{sup −2} eV{sup −1}. Capacitance measurement yielded no significant difference between the HFET and MOSHFET structures. The formation of an AlOx layer modified the surface by partially eliminating surface states that arise from Ga-and As-based native oxides. The presence of an AlOx layer reflected in a reduced gate leakage current, which was evidenced by the two-terminal transistor measurement. Presented preparation procedure and device properties show great potential of AlGaAs/InGaAs-based MOSHFETs.

  15. Preparation and Wetting Behavior of Lyophobic Surface on Zinc Substrate

    Directory of Open Access Journals (Sweden)

    HAN Xiang-xiang

    2018-03-01

    Full Text Available Micro-nano structure on zinc substrate was fabricated through the combination of chemical etching with hydrochloric acid aqueous solution and hydrothermal reaction. After modification with perfluorooctanoic solution, the lyophobic surface was prepared. The phase composition, microstructure, chemical composition, and wettability of the as-obtained surface were investigated by X-ray diffractometer, scanning electron microscope, Fourier transform infrared spectrometer, and contact angle tester. The results show that a layer of ZnO nano-rods grows on the surface of the submicrometer structure, and exhibits good resistance to water impact and stability under the combined action of low surface energy material. When hydrochloric acid concentration is 1.0mol/L and hydrothermal reaction temperature is 95℃, the lyophobic surface possesses the best morphology of ZnO nano-rods. The maximum contact angles of distilled water and peanut oil are 154.65° and 144.65°, respectively, and the sliding angle is less than 10°.

  16. Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures.

    Science.gov (United States)

    Ng, Wing H; Lu, Yao; Liu, Huiyun; Carmalt, Claire J; Parkin, Ivan P; Kenyon, Anthony J

    2018-02-23

    Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.

  17. Elucidating the role of surface passivating ligand structural parameters in hole wave function delocalization in semiconductor cluster molecules.

    Science.gov (United States)

    Teunis, Meghan B; Nagaraju, Mulpuri; Dutta, Poulami; Pu, Jingzhi; Muhoberac, Barry B; Sardar, Rajesh; Agarwal, Mangilal

    2017-09-28

    This article describes the mechanisms underlying electronic interactions between surface passivating ligands and (CdSe) 34 semiconductor cluster molecules (SCMs) that facilitate band-gap engineering through the delocalization of hole wave functions without altering their inorganic core. We show here both experimentally and through density functional theory calculations that the expansion of the hole wave function beyond the SCM boundary into the ligand monolayer depends not only on the pre-binding energetic alignment of interfacial orbitals between the SCM and surface passivating ligands but is also strongly influenced by definable ligand structural parameters such as the extent of their π-conjugation [π-delocalization energy; pyrene (Py), anthracene (Anth), naphthalene (Naph), and phenyl (Ph)], binding mode [dithiocarbamate (DTC, -NH-CS 2 - ), carboxylate (-COO - ), and amine (-NH 2 )], and binding head group [-SH, -SeH, and -TeH]. We observe an unprecedentedly large ∼650 meV red-shift in the lowest energy optical absorption band of (CdSe) 34 SCMs upon passivating their surface with Py-DTC ligands and the trend is found to be Ph- wave function delocalization rather than carrier trapping and/or phonon-mediated relaxation. Taken together, knowledge of how ligands electronically interact with the SCM surface is crucial to semiconductor nanomaterial research in general because it allows the tuning of electronic properties of nanomaterials for better charge separation and enhanced charge transfer, which in turn will increase optoelectronic device and photocatalytic efficiencies.

  18. Nanoimprint Lithography on curved surfaces prepared by fused deposition modelling

    International Nuclear Information System (INIS)

    Köpplmayr, Thomas; Häusler, Lukas; Bergmair, Iris; Mühlberger, Michael

    2015-01-01

    Fused deposition modelling (FDM) is an additive manufacturing technology commonly used for modelling, prototyping and production applications. The achievable surface roughness is one of its most limiting aspects. It is however of great interest to create well-defined (nanosized) patterns on the surface for functional applications such as optical effects, electronics or bio-medical devices. We used UV-curable polymers of different viscosities and flexible stamps made of poly(dimethylsiloxane) (PDMS) to perform Nanoimprint Lithography (NIL) on FDM-printed curved parts. Substrates with different roughness and curvature were prepared using a commercially available 3D printer. The nanoimprint results were characterized by optical light microscopy, profilometry and atomic force microscopy (AFM). Our experiments show promising results in creating well-defined microstructures on the 3D-printed parts. (paper)

  19. Luminescence in colloidal Mn2+-doped semiconductor nanocrystals

    International Nuclear Information System (INIS)

    Beaulac, Remi; Archer, Paul I.; Gamelin, Daniel R.

    2008-01-01

    Recent advances in nanocrystal doping chemistries have substantially broadened the variety of photophysical properties that can be observed in colloidal Mn 2+ -doped semiconductor nanocrystals. A brief overview is provided, focusing on Mn 2+ -doped II-VI semiconductor nanocrystals prepared by direct chemical synthesis and capped with coordinating surface ligands. These Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation. A brief outlook on future research directions is provided. - Graphical abstract: Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation

  20. Preparation and characterization of semiconductor thin film cells of n-CdSe and CdSel-x Tex. Application in solar cells of liquid union

    International Nuclear Information System (INIS)

    Gutierrez, M.A.

    1987-01-01

    The development of the new energy sources, constitutes one of the most active and changing investigation areas of nowday. Within this frame, the conservation of photovoltaic solar energy, has taken a particular importance, as these systems become directly the photovoltaic solar energy, which incises on a semiconductor, in electric energy. In spite of this advantage, the use of photovoltaic systems is limited, being the main reason for this, the still high cost of the devices. One of the objectives of this Memory is to contribute to the reduction of these photovoltaic devices by using available methods for the preparation of photosensitive material, and for the union formation. The chosen preparation method is the electrochemical one and the electric field is made up in the interphase semiconductor/electrolyte, dipping the semiconductor in a convenient electrolyte. Summarizing, it can be said that the Memory's objetive presented is to discover the experiences realized in the electrochemical preparation of the n-CdSel-x Tex and its characterization by chemical analysis, X-rays difraction, electronic microscope of swept, optical techniques and photoelectrochemical methods. From the data obtained with these techniques, a study of the physical parameters evolution which determine the photovoltaic properties of the semiconductor, is made, as: the concentration of minoritary carriers, ND, and the diffusion length of these carriers, LP. Finally, taking into account the results obtained by the characterization of n-CdSe and CdSel-x Tex, is made from the construction of the photoelectrochemical cell, using two kinds of electrolyte: sulfide- polysulfide ands ferro-ferricyanide. (Author)

  1. Allowing for surface preparation in stress corrosion cracking modelling

    International Nuclear Information System (INIS)

    Berge, P.; Buisine, D.; Gelpi, A.

    1997-01-01

    When a 600 alloy component is significantly deformed during installation, by welding, rolling, bending, its stress corrosion cracking in Pressurized Water Nuclear Reactor's primary coolant, is significantly changed by the initial surface treatment. Therefore, the crack initiated time may be reduced by several orders of magnitude for certain surfaces preparations. Allowing for cold working of the surface, for which modelling is proposed, depends less on the degree of cold work then on the depths of the hardened layers. Honing hardens the metal over depths of about one micron for vessel head penetrations, for example, and has little influence on subsequent behaviour after the part deforms. On the other hand, coarser turning treatment produces cold worked layers which can reach several tens of microns and can very significantly reduce the initiation time compared to fine honing. So evaluation after depths of hardening is vital on test pieces for interpreting laboratory results as well as on service components for estimating their service life. Suppression by mechanical or chemical treatment of these layers, after deformation, seems to be the most appropriate solution for reducing over-stressing connected with surface treatment carried out before deformation. (author)

  2. ARTICLES: Nonlinear interaction of infrared waves on a VO2 surface at a semiconductor-metal phase transition

    Science.gov (United States)

    Berger, N. K.; Zhukov, E. A.; Novokhatskiĭ, V. V.

    1984-04-01

    The use of a semiconductor-metal phase transition for wavefront reversal of laser radiation was proposed. An investigation was made of nonlinear reflection of CO2 laser radiation at a phase transition in VO2. A three-wave interaction on a VO2 surface was achieved using low-power cw and pulsed CO2 lasers. In the first case, the intensity reflection coefficient was 0.5% for a reference wave intensity of 0.9 W/cm2 and in the second case, it was 42% for a threshold reference wave energy density of 0.6-0.8 mJ/cm2.

  3. Control of magnetism in dilute magnetic semiconductor (Ga,Mn)As films by surface decoration of molecules

    Science.gov (United States)

    Wang, Hailong; Wang, Xiaolei; Xiong, Peng; Zhao, Jianhua

    2016-03-01

    The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,Mn)As thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,Mn)As thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,Mn)As and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

  4. Control of magnetism in dilute magnetic semiconductor (Ga,MnAs films by surface decoration of molecules

    Directory of Open Access Journals (Sweden)

    Hailong eWang

    2016-03-01

    Full Text Available The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,MnAs thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,MnAs thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,MnAs and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

  5. Effect of surface states on electrical characteristic of metal - insulator - semiconductor (MIS) diodes

    International Nuclear Information System (INIS)

    Altindal, S.; Doekme, I.; Tataroglu, A.; Sahingoez, R.

    2002-01-01

    The current-voltage (I-V) characteristics of Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes which is consider distribution of interface states in equilibrium with semiconductor were determined at two (low and high) temperature. The interface states were responsible for non-ideal behavior of the forward I-V characteristic of diodes. Both diodes (n and p type Si) showed non-ideal behavior with an ideality factor 1.6 and 1.85 respectively at room temperature. The higher values of n-type Si were attributed to an order of magnitude higher density of interface states in the both diodes. The effect of an interfacial insulator layer between the metal and semiconductor are also studied. The high density of interface states also caused a reduction in the barrier height of the MIS diode. It is shown that by using Norde function at low and high temperature, barrier height □ b , series resistance R s and ideality factor n can be determined even in the case 1 s obtained from Norde function strongly depend on temperature, and decrease with increasing temperature. In addition, the potential barrier height increases with increasing temperature. The mean density of interface states N ss decreases with increasing temperature. Particularly at low temperature the I-V characteristics are controlled by interface states density

  6. Tuning optoelectronic properties of small semiconductor nanocrystals through surface ligand chemistry

    Science.gov (United States)

    Lawrence, Katie N.

    Semiconductor nanocrystals (SNCs) are a class of material with one dimension wave function 1) into the ligand monolayer using metal carboxylates and 2) beyond the ligand monolayer to provide strong inter-SNC electronic coupling using poly(ethylene) glycol (PEG)-thiolate was explored. Passivation of the Se sites of metal chalcogenide SNCs by metal carboxylates provided a two-fold outcome: (1) facilitating the delocalization of exciton wave functions into ligand monolayers (through appropriate symmetry matching and energy alignment) and (2) increasing fluorescence quantum yield (through passivation of midgap trap states). An ˜240 meV red-shift in absorbance was observed upon addition of Cd(O2CPh)2, as well as a ˜260 meV shift in emission with an increase in PL-QY to 73%. Through a series of control experiments, as well as full reversibility of our system, we were able to conclude that the observed bathochromic shifts were the sole consequence of delocalization, not a change in size or relaxation of the inorganic core, as previously reported. Furthermore, the outstanding increase in PL-QY was found to be a product of both passivation and delocalization effects. Next we used poly(ethylene) glycol (PEG)-thiolate ligands to passivate the SNC and provide unique solubility properties in both aqueous and organic solvents as well as utilized their highly conductive nature to explore inter-SNC electronic coupling. The electronic coupling was studied: 1) as a function of SNC size where the smallest SNC exhibited the largest coupling energy (170 meV) and 2) as a function of annealing temperature, where an exceptionally large (˜400 meV) coupling energy was observed. This strong electronic coupling in self-organized films could facilitate the large-scale production of highly efficient electronic materials for advanced optoelectronic device applications. Strong inter-SNC electronic coupling together with high solubility, such as that provided by PEG-thiolate-coated CdSe SNCs

  7. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

    Directory of Open Access Journals (Sweden)

    Konrad Maier

    2015-09-01

    Full Text Available In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

  8. Impact of Molecular Orientation and Packing Density on Electronic Polarization in the Bulk and at Surfaces of Organic Semiconductors

    KAUST Repository

    Ryno, Sean

    2016-05-16

    The polarizable environment surrounding charge carriers in organic semiconductors impacts the efficiency of the charge transport process. Here, we consider two representative organic semiconductors, tetracene and rubrene, and evaluate their polarization energies in the bulk and at the organic-vacuum interface using a polarizable force field that accounts for induced-dipole and quadrupole interactions. Though both oligoacenes pack in a herringbone motif, the tetraphenyl substituents on the tetracene backbone of rubrene alter greatly the nature of the packing. The resulting change in relative orientations of neighboring molecules is found to reduce the bulk polarization energy of holes in rubrene by some 0.3 eV when compared to tetracene. The consideration of model organic-vacuum interfaces highlights the significant variation in the electrostatic environment for a charge carrier at a surface although the net change in polarization energy is small; interestingly, the environment of a charge even just one layer removed from the surface can be viewed already as representative of the bulk. Overall, it is found that in these herringbone-type layered crystals the polarization energy has a much stronger dependence on the intralayer packing density than interlayer packing density.

  9. The theory of surface-enhanced Raman scattering on semiconductor nanoparticles; toward the optimization of SERS sensors.

    Science.gov (United States)

    Lombardi, John R

    2017-12-04

    We present an expression for the lowest order nonzero contribution to the surface-enhanced Raman spectrum obtained from a system of a molecule adsorbed on a semiconductor nanoparticle. Herzberg-Teller vibronic coupling of the zero-order Born-Oppenheimer states results in an expression which may be regarded as an extension of the Albrecht A-, B-, and C-terms to SERS substrates. We show that the SERS enhancement is caused by combinations of several types of resonances in the combined system, namely, surface, exciton, charge-transfer, and molecular resonances. These resonances are coupled by terms in the numerator, which provide selection rules that enable various tests of the theory and predict the relative intensities of the Raman lines. Furthermore, by considering interactions of the various contributions to the SERS enhancement, we are able to develop ways to optimize the enhancement factor by tailoring the semiconductor nanostructure, thereby adjusting the locations of the various contributing resonances. This provides a procedure by which molecular sensors can be constructed and optimized. We provide several experimental examples on substrates such as monolayer MoS 2 and GaN nanorods.

  10. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  11. Impact of Molecular Orientation and Packing Density on Electronic Polarization in the Bulk and at Surfaces of Organic Semiconductors

    KAUST Repository

    Ryno, Sean; Risko, Chad; Bredas, Jean-Luc

    2016-01-01

    The polarizable environment surrounding charge carriers in organic semiconductors impacts the efficiency of the charge transport process. Here, we consider two representative organic semiconductors, tetracene and rubrene, and evaluate

  12. Theoretical aspects of studies of oxide and semiconductor surfaces using low energy positrons

    Science.gov (United States)

    Fazleev, N. G.; Maddox, W. B.; Weiss, A. H.

    2011-01-01

    This paper presents the results of a theoretical study of positron surface and bulk states and annihilation characteristics of surface trapped positrons at the oxidized Cu(100) single crystal and at both As- and Ga-rich reconstructed GaAs(100) surfaces. The variations in atomic structure and chemical composition of the topmost layers of the surfaces associated with oxidation and reconstructions and the charge redistribution at the surfaces are found to affect localization and spatial extent of the positron surface-state wave functions. The computed positron binding energy, work function, and annihilation characteristics reveal their sensitivity to charge transfer effects, atomic structure and chemical composition of the topmost layers of the surfaces. Theoretical positron annihilation probabilities with relevant core electrons computed for the oxidized Cu(100) surface and the As- and Ga-rich reconstructed GaAs(100) surfaces are compared with experimental ones estimated from the positron annihilation induced Auger peak intensities measured from these surfaces.

  13. Study on deep levels in near-surface region of Hgsub(1-x)Cdsub(x)Te semiconductor

    International Nuclear Information System (INIS)

    Antonov, V.V.; Vojtsekhovskij, A.V.; Kazak, E.P.; Lanskaya, O.G.; Pakhorukov, V.A.

    1983-01-01

    Experimental investigation into MOS-structures on the basis of narrow-band n-Hgsub(1-x)Cdsub(X)Te semiconductor was conducted. Anode-oxide film, grown in 0.1N KOH solution in ethylenglycol was used as dielectric laer, olt-farad characteristics of the MOS- structures, measured, at different frequencies of test voltage, testify to the presence of deep monoenergetic levels (Esub(t)) in near surface region of semicondUctor located within the limits of the energy gap of Hgsub(1-x)Cdsub(x)Te. Two types of levels are observed in the n-Hgsub(1-x)Cdsub(x)Te-base MOS-structures at x approximately equal to 0.21: Isub(t)=0.105-0.096 eV and Esub(t)=0.045-0.042 eV (with respect to the valent zone ceiling). The frequency dependence of the equivalent parallel conductivity of the Hgsub(1-x)Cdsub(x)Te-base MOS-structure different voltages on a field electrode was used to show, that the observed deep level has the bulk nature. Results of numeral estimations of the state densities on the impurity center and of capture cross-section of a positive charge (deltasub(p)=6.7x10 -17 -1.4x10 -16 )sm 2 ) are given

  14. Electronic properties of adsorbates and clean surfaces of metals and semiconductors

    International Nuclear Information System (INIS)

    Lecante, J.

    1980-01-01

    This paper surveys recent progress in experimental studies on electronic properties of adsorbates and clean metal surfaces. Electron spectroscopy and particularly angle resolved photoelectron spectroscopy appears to be a very powerful tool to get informations on electronic levels of adsorbates or clean surfaces. Moreover this technique may also give informations about the atomic geometry of the surface. Experimental investigation about surface plasmons, surface states, core level shifts are presented for clean surfaces. As examples of adsorbate covered surfaces two typical cases are chosen: two dimensional band structure and oriented molecules. Finally the photoelectron diffraction may be used for surface structure determination either in the case of an adsorbate or a clean metal surface [fr

  15. Optical excitation and electron relaxation dynamics at semiconductor surfaces: a combined approach of density functional and density matrix theory applied to the silicon (001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Buecking, N

    2007-11-05

    In this work a new theoretical formalism is introduced in order to simulate the phononinduced relaxation of a non-equilibrium distribution to equilibrium at a semiconductor surface numerically. The non-equilibrium distribution is effected by an optical excitation. The approach in this thesis is to link two conventional, but approved methods to a new, more global description: while semiconductor surfaces can be investigated accurately by density-functional theory, the dynamical processes in semiconductor heterostructures are successfully described by density matrix theory. In this work, the parameters for density-matrix theory are determined from the results of density-functional calculations. This work is organized in two parts. In Part I, the general fundamentals of the theory are elaborated, covering the fundamentals of canonical quantizations as well as the theory of density-functional and density-matrix theory in 2{sup nd} order Born approximation. While the formalism of density functional theory for structure investigation has been established for a long time and many different codes exist, the requirements for density matrix formalism concerning the geometry and the number of implemented bands exceed the usual possibilities of the existing code in this field. A special attention is therefore attributed to the development of extensions to existing formulations of this theory, where geometrical and fundamental symmetries of the structure and the equations are used. In Part II, the newly developed formalism is applied to a silicon (001)surface in a 2 x 1 reconstruction. As first step, density-functional calculations using the LDA functional are completed, from which the Kohn-Sham-wave functions and eigenvalues are used to calculate interaction matrix elements for the electron-phonon-coupling an the optical excitation. These matrix elements are determined for the optical transitions from valence to conduction bands and for electron-phonon processes inside the

  16. Bioactive carbon-PEEK composites prepared by chemical surface treatment.

    Science.gov (United States)

    Miyazaki, Toshiki; Matsunami, Chisato; Shirosaki, Yuki

    2017-01-01

    Polyetheretherketone (PEEK) has attracted much attention as an artificial intervertebral spacer for spinal reconstruction. Furthermore, PEEK plastic reinforced with carbon fiber has twice the bending strength of pure PEEK. However, the PEEK-based materials do not show ability for direct bone bonding, i.e., bioactivity. Although several trials have been conducted for enabling PEEK with bioactivity, few studies have reported on bioactive surface modification of carbon-PEEK composites. In the present study, we attempted the preparation of bioactive carbon-PEEK composites by chemical treatments with H 2 SO 4 and CaCl 2 . Bioactivity was evaluated by in vitro apatite formation in simulated body fluid (SBF). The apatite formation on the carbon-PEEK composite was compared with that of pure PEEK. Both pure PEEK and carbon-PEEK composite formed the apatite in SBF when they were treated with H 2 SO 4 and CaCl 2 ; the latter showed higher apatite-forming ability than the former. It is conjectured that many functional groups able to induce the apatite nucleation, such as sulfo and carboxyl groups, are incorporated into the dispersed carbon phase in the carbon-PEEK composites. Copyright © 2016 Elsevier B.V. All rights reserved.

  17. SURFACE MODIFICATION OF SEMICONDUCTOR THIN FILM OF TiO2 ON GRAPHITE SUBSTRATE BY Cu-ELECTRODEPOSITION

    Directory of Open Access Journals (Sweden)

    Fitria Rahmawati

    2010-06-01

    Full Text Available Surface modification of graphite/TiO2 has been done by mean of Cu electrodeposition. This research aims to study the effect of Cu electrodeposition on photocatalytic enhancing of TiO2. Electrodeposition has been done using CuSO4 0,4 M as the electrolyte at controlled current. The XRD pattern of modified TiO2 thin film on graphite substrate exhibited new peaks at 2θ= 43-44o and 2θ= 50-51o that have been identified as Cu with crystal cubic system, face-centered crystal lattice and crystallite size of 26-30 nm. CTABr still remains in the material as impurities. Meanwhile, based on morphological analysis, Cu particles are dissipated in the pore of thin film. Graphite/TiO2/Cu has higher photoconversion efficiency than graphite/TiO2.   Keywords: semiconductor, graphite/TiO2, Cu electrodeposition

  18. FY1995 studies on surface structures and mechanism of photocatalytic action of semiconductor oxides; 1995 nendo handotai hikari shokubai no hyomen kozo seigyo to sayo kiko kaimei ni kansuru kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    Development of the semiconductor photocatalyst such as titanium dioxide is important for photo-energy conversion and purification of the environment. We make clear that the mechanism of the photocatalysis using a spectroscopic or physico-chemical methods, and we developed the new photocatalyst with the control of the surface area, porosity, infinitesimal content, and surface modification of the catalyst surface. Titanium dioxide thin film photocatalysts were prepared by the dip coating method. Surface structure of the thin film was formed by the aggregated TiO{sub 2} anatase particle, its size was around 5 nm. This thin films effectively oxidazed NO, its photocatalytic activity is higher than that of commercial photocatalyst. Metal oxide anchored TiO{sub 2} photocatalysts (RuO{sub 2}/TiO{sub 2}) were prepared by the co-precipitation method. Effective charge separation of the RuO{sub 2}/TiO{sub 2} were confirmed by the measurement of ESR. The RuO{sub 2}/TiO{sub 2} photocatalyst successfully reduced CO{sub 2} and preserved its activity for much longer period than metal loaded catalyst. Hybrid photofunctionalized material was prepared by anchoring porphyrin moieties on the titanium dioxide surface. The relative quantum yield of electron transfer from porphyrin to the titanium dioxide conduction band has been markedly increased by water treatment of quanternized porphyrin-titanium dioxide covalently linked systems owing to removal of adsorbed porphyrin domains. (NEDO)

  19. Charge transfer rates for xenon Rydberg atoms at metal and semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Dunning, F.B. [Department of Physics and Astronomy, Rice University, MS 61, 6100 Main Street, Houston, TX 77005-1892 (United States)]. E-mail: fbd@rice.edu; Wethekam, S. [Institut fuer Physik der Humboldt-Universitaet zu Berlin, Newtonstr. 15, D-12489 Berlin (Germany); Dunham, H.R. [Department of Physics and Astronomy, Rice University, MS 61, 6100 Main Street, Houston, TX 77005-1892 (United States); Lancaster, J.C. [Department of Physics and Astronomy, Rice University, MS 61, 6100 Main Street, Houston, TX 77005-1892 (United States)

    2007-05-15

    Recent progress in the study of charge exchange between xenon Rydberg atoms and surfaces is reviewed. Experiments using Au(1 1 1) surfaces show that under appropriate conditions each incident atom can be detected as an ion. The ionization dynamics, however, are strongly influenced by the perturbations in the energies and structure of the atomic states that occur as the ion collection field is applied and as the atom approaches the surface. These lead to avoided crossings between different atomic levels causing the atom to successively assume the character of a number of different states and lose much of its initial identity. The effects of this mixing are discussed. Efficient surface ionization is also observed at Si(1 0 0) surfaces although the ion signal is influenced by stray fields present at the surface.

  20. Characterization of semiconductor surfaces and interfaces by high energy ion scattering

    International Nuclear Information System (INIS)

    Narusawa, Tadashi; Kobayashi, K.L.I.; Nakashima, Hisao

    1984-01-01

    The use of surface peak, which appears in MeV ion channeling experiments, is demonstrated as a local probe for direct and quantitative measurements of atomic displacements smaller than --0.1A. The atomic structures of GaAs(001)-c(4x4) clean surface and hydrogen-absorbed (1x1) surface are analyzed by this technique as well as the interface atomic structures of GaAs(001)-SiOsub(x) and Si(111)-Pd systems. (author)

  1. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    Science.gov (United States)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  2. Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

    International Nuclear Information System (INIS)

    Moreschini, L.; Autès, G.; Crepaldi, A.; Moser, S.; Johannsen, J.C.; Kim, K.S.; Berger, H.; Bugnon, Ph.; Magrez, A.; Denlinger, J.; Rotenberg, E.; Bostwick, A.; Yazyev, O.V.

    2015-01-01

    Highlights: • We provide an ARPES comparison between the three tellurohalides BiTeX (X = I, Br, Cl). • They present a similar band structure with namely spin-split bulk and surface states. • They offer, except for BiTeCl, the possibility of ambipolar conduction. • They can be easily doped. • From the data appeared so far, BiTeBr may be the most appealing for applications. - Abstract: We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work

  3. Plenary lectures of the divisions semiconductor physics, thin films, dynamics and statistical physics, magnetism, metal physics, surface physics, low temperature physics

    International Nuclear Information System (INIS)

    Roessler, U.

    1992-01-01

    This volume contains a selection of plenary and invited lectures of the Solid State Division spring meeting of the DPG (Deutsche Physikalische Gesellschaft) 1992 in Regensburg. The constribution come mainly from five fields of the physics of condensed matter: doped fullerenes and high Tc superconductors, surfaces, time-resolved on nonlinear optics, polymer melts, and low-dimensional semiconductor systems. (orig.)

  4. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  5. Manifestation of surface phonons in far infrared reflectivity of diamond-type semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Sanchez, F.L.; Perez-Rodriguez, F. [Instituto de Fisica, Universidad Autonoma de Puebla, Apdo. Post. J-48, Puebla, Pue. 72570 (Mexico)

    2004-11-01

    The coupling of surface phonons with light at (001) surfaces of diamond-structure crystals and its manifestation in far-infrared anisotropy spectra are theoretically studied. We apply the adiabatic bond charge model to describe short-range mechanical interactions together with long-range Coulomb forces and radiation fields, and we solve the corresponding system of coupled equations for the electromagnetic field and the lattice vibrations. We calculate far-infrared normal reflectance spectra of (001) surfaces of semi-infinite diamond-type crystals. In particular, we analyse reflectance spectra for the Si(001) (2 x 1) surface, which exhibit a resonance structure associated with the excitation of surface phonon modes. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Preparation of InAs(0 0 1) surface for spin injection via a chemical route

    International Nuclear Information System (INIS)

    Singh, L J; Oliver, R A; Barber, Z H; Eustace, D A; McComb, D W; Clowes, S K; Gilbertson, A M; Magnus, F; Branford, W R; Cohen, L F; Buckle, L; Buckle, P D; Ashley, T

    2007-01-01

    A wet chemical surface treatment for InAs epilayers is investigated to remove the native semiconductor oxide prior to growth of a MgO tunnel barrier and Co ferromagnetic electrode by dc magnetron sputtering. Use of a HCl etch followed by (NH 4 ) 2 S as the pre-growth surface treatment resulted in pinhole-like features in the tunnel barrier, as observed by conducting atomic force microscopy, but this detrimental effect is avoided if the etch procedure is repeated twice. High resolution transmission electron microscopy revealed that the etched samples had uniform tunnel barriers and reducing the growth temperature of the barrier from 200 to 100 0 C significantly improved the abruptness of the semiconductor/barrier interface. Electrical characterization of barrier properties illustrated that all the etched samples showed parabolic differential conductance curves indicative of tunnelling behaviour at 300 K

  7. Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe

    Energy Technology Data Exchange (ETDEWEB)

    Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru; Sheglov, D. V.; Latyshev, A. V. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2017-04-15

    A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.

  8. Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors.

    Science.gov (United States)

    Bain, Lauren E; Collazo, Ramon; Hsu, Shu-Han; Latham, Nicole Pfiester; Manfra, Michael J; Ivanisevic, Albena

    2014-06-01

    The chemical stability and electrical properties of gallium nitride make it a promising material for the development of biocompatible electronics, a range of devices including biosensors as well as interfaces for probing and controlling cellular growth and signaling. To improve the interface formed between the probe material and the cell or biosystem, surface topography and chemistry can be applied to modify the ways in which the device interacts with its environment. PC12 cells are cultured on as-grown planar, unidirectionally polished, etched nanoporous and nanowire GaN surfaces with and without a physisorbed peptide sequence that promotes cell adhesion. While cells demonstrate preferential adhesion to roughened surfaces over as-grown flat surfaces, the topography of that roughness also influences the morphology of cellular adhesion and differentiation in neurotypic cells. Addition of the peptide sequence generally contributes further to cellular adhesion and promotes development of stereotypic long, thin neurite outgrowths over alternate morphologies. The dependence of cell behavior on both the topographic morphology and surface chemistry is thus demonstrated, providing further evidence for the importance of surface modification for modulating bio-inorganic interfaces. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  9. Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

    Science.gov (United States)

    Barho, Franziska B.; Gonzalez-Posada, Fernando; Milla, Maria-Jose; Bomers, Mario; Cerutti, Laurent; Tournié, Eric; Taliercio, Thierry

    2017-11-01

    Tailored plasmonic nanoantennas are needed for diverse applications, among those sensing. Surface-enhanced infrared absorption (SEIRA) spectroscopy using adapted nanoantenna substrates is an efficient technique for the selective detection of molecules by their vibrational spectra, even in small quantity. Highly doped semiconductors have been proposed as innovative materials for plasmonics, especially for more flexibility concerning the targeted spectral range. Here, we report on rectangular-shaped, highly Si-doped InAsSb nanoantennas sustaining polarization switchable longitudinal and transverse plasmonic resonances in the mid-infrared. For small array periodicities, the highest reflectance intensity is obtained. Large periodicities can be used to combine localized surface plasmon resonances (SPR) with array resonances, as shown in electromagnetic calculations. The nanoantenna arrays can be efficiently used for broadband SEIRA spectroscopy, exploiting the spectral overlap between the large longitudinal or transverse plasmonic resonances and narrow infrared active absorption features of an analyte molecule. We demonstrate an increase of the vibrational line intensity up to a factor of 5.7 of infrared-active absorption features of vanillin in the fingerprint spectral region, yielding enhancement factors of three to four orders of magnitude. Moreover, an optimized readout for SPR sensing is proposed based on slightly overlapping longitudinal and transverse localized SPR.

  10. Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

    Directory of Open Access Journals (Sweden)

    Barho Franziska B.

    2017-11-01

    Full Text Available Tailored plasmonic nanoantennas are needed for diverse applications, among those sensing. Surface-enhanced infrared absorption (SEIRA spectroscopy using adapted nanoantenna substrates is an efficient technique for the selective detection of molecules by their vibrational spectra, even in small quantity. Highly doped semiconductors have been proposed as innovative materials for plasmonics, especially for more flexibility concerning the targeted spectral range. Here, we report on rectangular-shaped, highly Si-doped InAsSb nanoantennas sustaining polarization switchable longitudinal and transverse plasmonic resonances in the mid-infrared. For small array periodicities, the highest reflectance intensity is obtained. Large periodicities can be used to combine localized surface plasmon resonances (SPR with array resonances, as shown in electromagnetic calculations. The nanoantenna arrays can be efficiently used for broadband SEIRA spectroscopy, exploiting the spectral overlap between the large longitudinal or transverse plasmonic resonances and narrow infrared active absorption features of an analyte molecule. We demonstrate an increase of the vibrational line intensity up to a factor of 5.7 of infrared-active absorption features of vanillin in the fingerprint spectral region, yielding enhancement factors of three to four orders of magnitude. Moreover, an optimized readout for SPR sensing is proposed based on slightly overlapping longitudinal and transverse localized SPR.

  11. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

    Science.gov (United States)

    Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

    2018-01-01

    The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

  12. Preparation of polymeric superhydrophobic surfaces and analysis of their wettability

    Science.gov (United States)

    Zhuang, Jian; Huang, Manling; Zhang, Yajun; Wu, Daming; Kuang, Tairong; Xu, Hong; Zhang, Xiaoxu

    2015-10-01

    In this paper, we presented three simple, facile and low-cost manufacturing methods—template method, nanoparticle filling method and extrusion stamping forming method—to fabricate the polymeric superhydrophobic surfaces. The stainless steel wire mesh as the template and glass beads was investigated in this study for the first time and low-cost hollow glass beads were rarely used as particles for fabricating the superhydrophobic surface. The water contact angle measurement of polymeric surfaces was used to investigate the effect of mesh count, glass beads and PTFE on fabricating polymeric superhydrophobic surface. It was found that the mesh count significantly affected the hydrophobicity of polymer surface in template method. The addition of glass beads improved the hydrophobicity by nanoparticle filling method. The addition of PTFE was of importance to fabricate the superhydrophobic surface by extrusion stamping forming method. The surface microstructure was also observed by scanning electron microscope.

  13. On the surface recombination current of metal-insulator semiconductor inversion layer solar cells

    DEFF Research Database (Denmark)

    Nielsen, Otto M.

    1981-01-01

    voltages Voc were found to be lower than for ~ cells. The measured differences in Voc were higher than expected from the dark characteristics which is explained as a difference in the surface recombination current due to a higher interface state density Nss of ~ cells. Journal of Applied Physics...

  14. Miniaturized Quantum Semiconductor Surface Plasmon Resonance Platform for Detection of Biological Molecules

    Directory of Open Access Journals (Sweden)

    Jan J. Dubowski

    2013-06-01

    Full Text Available The concept of a portable, inexpensive and semi-automated biosensing platform, or lab-on-a-chip, is a vision shared by many researchers and venture industries. Under this scope, we have investigated the application of optical emission from quantum well (QW microstructures for monitoring surface phenomena on gold layers remaining in proximity (<300 nm with QW microstructures. The uncollimated QW radiation excites surface plasmons (SP and through the surface plasmon resonance (SPR effect allows for detection of small perturbation in the density surface adsorbates. The SPR technology is already commonly used for biochemical characterization in pharmaceutical industries, but the reduction of the distance between the SP exciting source and the biosensing platform to a few hundreds of nanometers is an innovative approach enabling us to achieve an ultimate miniaturization of the device. We evaluate the signal quality of this nanophotonic QW-SPR device using hyperspectral-imaging technology, and we compare its performance with that of a standard prism-based commercial system. Two standard biochemical agents are employed for this characterization study: bovine serum albumin and inactivated influenza A virus. With an innovative conical method of SPR data collection, we demonstrate that individually collected SPR scan, each in less than 2.2 s, yield a resolution of the detection at 1.5 × 10−6 RIU.

  15. Cardiomyocyte differentiation of embryonic stem cells on the surface of organic semiconductors.

    Science.gov (United States)

    Caserta, Sergio; Barra, Mario; Manganelli, Genesia; Tomaiuolo, Giovanna; Filosa, Stefania; Cassinese, Antonio; Guido, Stefano

    2013-06-25

    Electrically active supports provide new horizons for bio-sensing and artificial organ design. Cell-based electrochemical biosensors can be used as bio-microactuators, applied to the biorobotics. Microchip-based bioassay systems can provide real-time cell analysis for preclinical drug design or for intelligent drug delivery devices. In regenerative medicine, electrically active supports can be used as bio-reactors to monitor cell activity, optimize the stem cell differentiation and control cell and tissue morphology. Biocompatibility and direct interaction of the electrically active surface with the cell surface is a critical aspect of this technology.
 In this work embryonic stem cells (AK7 ES) have been cultivated on the surface of thin films achieved through the evaporation of two aromatic compounds (T6 and PDI-8CN2 ) of particular interest for the fabrication of organic field-effect transistors (OFET). One of the potential advantages offered by the application of OFETs as bio-electronic supports is that they represent a powerful tool for the detection of bio-signals because their electrically active surface is an organic film.
 The cell morphology on T6 and PDI-8CN2 surface shows to be similar to the usual cell appearance, as obtained when standard culture support (petri dish) are employed. Moreover, our experimental results demonstrate that stem cells can be lead to differentiation up to "beating" cardiomyocytes even on these electrically-active organic films.
 This investigation encourages the perspective to develop OFET-based biosensors in order to accurately characterize stem cells during the cardiac differentiation process and eventually increase their differentiation efficiency.

  16. Theoretical study of the noble metals on semiconductor surfaces and Ti-base shape memory alloys

    International Nuclear Information System (INIS)

    Ding, Yungui.

    1994-01-01

    The electronic and structural properties of the (√3 x √3) R30 degrees Ag/Si(111) and (√3 x √3) R30 degrees Au/Si(111) surfaces are investigated using first principles total energy calculations. We have tested almost all experimentally proposed structural models for both surfaces and found the energetically most favorable model for each of them. The lowest energy model structure of the (√3 x √3) R30 degrees Ag/Si(111) surface consists of a top layer of Ag atoms arranged as ''honeycomb-chained-trimers'' lying above a distorted ''missing top layer'' Si(111) substrate. The coverage of Ag is 1 monolayer (ML). We find that the honeycomb structure observed in STM images arise from the electronic charge densities of an empty surface band near the Fermi level. The electronic density of states of this model gives a ''pseudo-gap'' around the Fermi level, which is consistent with experimental results. The lowest energy model for the (√3 x √3) R30 degrees Au/Si(111) surface is a conjugate honeycomb-chained-trimer (CHCT-1) configuration which consists of a top layer of trimers formed by 1 ML Au atoms lying above a ''missing top layer'' Si(111) substrate with a honeycomb-chained-trimer structure for its first layer. The structures of Au and Ag are in fact quite similar and belong to the same class of structural models. However, small variation in the structural details gives rise to quite different observed STM images, as revealed in the theoretical calculations. The electronic charge density from bands around the Fermi level for the (√3 x √3) R30 degrees, Au/Si(111) surface also gives a good description of the images observed in STM experiments. First principles calculations are performed to study the electronic and structural properties of a series of Ti-base binary alloys TiFe, TiNi, TiPd, TiMo, and TiAu in the B2 structure

  17. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yan [Jilin Province Research Center for Engineering and Technology of Spectral Analytical Instruments, Jilin University, Changchun 130023 (China); Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yu Dongdong [1st Hopstail affiliated to Jilin University, Jilin University, Changchun 130023 (China); Zhou Jianguang [Research Center for Analytical Instrumentation, Zhejiang University, Hangzhou 310058 (China)], E-mail: liuxy@jlu.edu.cn, E-mail: jgzhou70@126.com

    2008-06-18

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  18. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    International Nuclear Information System (INIS)

    Liu Yan; Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang; Yu Dongdong; Zhou Jianguang

    2008-01-01

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals

  19. Modulating emission polarization of semiconductor quantum dots through surface plasmon of metal nanorod

    Science.gov (United States)

    Cheng, Mu-Tian; Liu, Shao-Ding; Wang, Qu-Quan

    2008-04-01

    We theoretically investigated the dynamics of exciton populations [ρyy(t ) and ρxx(t )] on two orthogonal polarization eigenstates (∣x⟩ and ∣y⟩) and the polarization ratio P(t )=[ρyy(t )-ρxx(t )]/[ρyy(t )+ρxx(t )] of an anisotropic InGaAs quantum dot modulated by the surface plasmon of an Au nanorod (NR). In the resonance of longitudinal surface plasmon of AuNR, the polarization ratio P(t ) increases from 0.22 to 0.99 during the excitation due to the efficient enhancement of Rabi frequency of the transition between the ∣y⟩ and vacuum states, and decreases from 0.02 to -0.92 after the excitation pulse due to the enhancement of decay rate of the ∣y⟩ state. This offers an approach to modulate the dynamic polarization ratio of radiative emissions.

  20. Biexciton relaxation associated with dissociation into a surface polariton pair in semiconductor films

    Science.gov (United States)

    Mitsumori, Yasuyoshi; Matsuura, Shimpei; Uchiyama, Shoichi; Saito, Kentarao; Edamatsu, Keiichi; Nakayama, Masaaki; Ajiki, Hiroshi

    2018-04-01

    We study the biexciton relaxation process in CuCl films ranging from 6 to 200 nm. The relaxation time is measured as the dephasing time and the lifetime. We observe a unique thickness dependence of the biexciton relaxation time and also obtain an ultrafast relaxation time with a timescale as short as 100 fs, while the exciton lifetime monotonically decreases with increasing thickness. By analyzing the exciton-photon coupling energy for a surface polariton, we theoretically calculate the biexciton relaxation time as a function of the thickness. The calculated dependence qualitatively reproduces the observed relaxation time, indicating that the biexciton dissociation into a surface polariton pair is one of the major biexciton relaxation processes.

  1. Plasmonic reflectance anisotropy spectroscopy of metal nanoparticles on a semiconductor surface

    Science.gov (United States)

    Kosobukin, V. A.; Korotchenkov, A. V.

    2016-12-01

    A theory of plasmonic differential anisotropic reflection of light from nanoparticles located near the interface between media is developed. The model of a monolayer consisting of identical ellipsoidal metal particles occupying sites of a rectangular lattice is investigated. Effective plasmonic polarizabilities of nanoparticles in the layer are calculated self-consistently using the Green's function technique in the quasipoint dipole approximation. The local-field effect caused by anisotropic dipole plasmons of particles in the layer and their image dipoles is taken into account. The lately observed resonant reflectance anisotropy spectra of indium nanoclusters on InAs surface are explained by the difference between frequencies of plasmons with the orthogonal polarizations in the surface plane. The difference between the plasmon frequencies is attributed to anisotropy of the particles shape or/and the layer structure; the signs of frequency difference for the two types of anisotropy being different.

  2. Local emission spectroscopy of surface micrograins in A{sup III}B{sup V} semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, N. D., E-mail: ndzhukov@rambler.ru; Gluhovskoy, E. G.; Mosiyash, D. S. [Saratov State University (Russian Federation)

    2016-07-15

    The density-of-states spectra and the parameters of levels of electron states in locally chosen surface micrograins of indium antimonide and arsenide and gallium arsenide are studied with a tunneling electron microscope in the field-emission mode of measurements. By correlating the current–voltage characteristics with the formula for the probability of emission via levels, the activation energies of the levels (ψ) and the lifetimes of electrons at the levels (τ) are determined. Two types of levels for electron localization are identified. These are levels in the micrograin bulk (ψ ≈ 0.75, 1.15, and 1.59 eV for n-InSb, n-InAs, and n-GaAs, respectively; τ ~ 10{sup –8}–10{sup –7} s) and in the surface region of an i-InSb micrograin (ψ ~ 0.73, 1.33, 1.85, 2.15, 5.1 eV; τ ≈ 5 × 10{sup –8}–3 × 10{sup –7} s). A physical model involving the Coulomb-interaction-induced localization of light electrons and their size quantization determined by the electron effective mass, energy, and concentration and by the surface curvature of the micrograin is proposed.

  3. Apparatus for plasma surface treating and preparation of membrane layers

    NARCIS (Netherlands)

    1990-01-01

    An apparatus suitable for plasma surface treating (e.g., forming a membrane layer on a substrate surface) comprises a plasma generation section which is operable at least at substantially atmospheric pressure and is in communication via at least one plasma inlet (e.g., a nozzle) with an enclosed

  4. Surface modification by preparation of buffer zone in glow-discharge plasma

    International Nuclear Information System (INIS)

    Cho, D.L.

    1986-01-01

    Reactive species, energetic particles, and uv radiation in the plasma created by a glow discharge strongly interact with solid surfaces under the influence of the plasma. As a result of the strong interaction, various physical and chemical reactions, unique and advantageous for the surface modification of solid materials, occur on the solid surfaces. The surface modification is carried out through formation of a thin buffering layer on the solid surface. The preparation of a buffer zone on solid surfaces for surface modification is described. Two kinds of a buffer zone are prepared by plasma polymerization, or simultaneous sputter deposition of electrode material with plasma polymerization: a transitional buffer zone and a graded buffer zone. Important factors for preparation of the buffer zone (pre-conditioning of a substrate surface, thin-film deposition, post-treatment of the film, magnetron discharge, energy input, geometry of a substrate and a plasma) are discussed

  5. Elucidation and control of electronic properties related to organic semiconductors

    International Nuclear Information System (INIS)

    Yamane, Hiroyuki; Ueno, Nobuo; Seki, Kazuhiko

    2009-01-01

    The electronic structure of organic solids and interfaces plays a crucial role in the performance of optoelectronic devices using organic semiconductors such as light-emitting diodes, field-effect transistors, and photovoltaic cells. The functionality of these organic devices is seriously dominated by the geometric structure, which varies depending on the molecular structure and the sample preparation condition. Due to the rapid progress in sample preparation methods and surface science techniques, we can now discuss in detail the correlation of the electronic structure with the geometric structure of organic solids, films, and interfaces. This paper reviews the recent progress of studies in the geometric and electronic structures related to organic semiconductors. (author)

  6. Surface of Ti-Ni alloys after their preparation

    International Nuclear Information System (INIS)

    Saldan, I.; Frenzel, J.; Shekhah, O.; Chelmowski, R.; Birkner, A.; Woell, Ch.

    2009-01-01

    The Ti 3.87 Ni 1.73 Fe 0.7 O 0.3, Ti 3.87 Ni 1.73 Fe 0.4 N 0.3 and Ti 3.87 Ni 1.73 Fe 0.4 C 0.3 alloys were investigated regarding their surface characteristics. The scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectroscopy (EDS) was used for phase characterization. The X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical composition of alloy surface. The atomic force microscopy (AFM) to observe alloy surface topography after cutting and electrochemical polishing separately has been done. The transmission electron microscopy (TEM) with X-ray diffraction was carried out to get a high contrast images and the diffraction pattern from alloy surface. The results clearly shown, that all alloys were multiphase, and their surface was totally oxidized with no pure metals

  7. Etching of semiconductor cubic crystals: Determination of the dissolution slowness surfaces

    Science.gov (United States)

    Tellier, C. R.

    1990-03-01

    Equations of the representative surface of dissolution slowness for cubic crystals are determined in the framework of a tensorial approach of the orientation-dependent etching process. The independent dissolution constants are deduced from symmetry considerations. Using previous data on the chemical etching of germanium and gallium arsenide crystals, some possible polar diagrams of the dissolution slowness are proposed. A numerical and graphical simulation method is used to obtain the derived dissolution shapes. The influence of extrema in the dissolution slowness on the successive dissolution shapes is also examined. A graphical construction of limiting shapes of etched crystals appears possible using the tensorial representation of the dissolution slowness.

  8. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  9. Intersubband surface plasmon polaritons in all-semiconductor planar plasmonic resonators

    Science.gov (United States)

    ZałuŻny, M.

    2018-01-01

    We theoretically discuss properties of intersubband surface plasmon polaritons (ISPPs) supported by the system consisting of a multiple quantum well (MQW) slab embedded into planar resonator with highly doped semiconducting claddings playing the role of cavity mirrors. Symmetric structures, where the MQW slab occupies the whole space between the claddings and asymmetric structures, where the MQW occupy only half of the space between mirrors, are considered. We focus mainly on the nearly degenerate structures where intersubband frequency is close to frequency of the surface plasmon of the mirrors. The ISPP characteristics are calculated numerically using a semiclassical approach based on the transfer matrix formalism and the effective-medium approximation. The claddings are described by the lossless Drude model. The possibility of engineering the dispersion of the ISPP branches is demonstrated. In particular, for certain parameters of the asymmetric structures we observe the formation of the multimode ISPP branches with two zero group velocity points. We show that the properties of the ISPP branches are reasonably well interpreted employing quasiparticle picture provided that the concept of the mode overlap factor is generalized, taking into account the dispersive character of the mirrors. In addition to this, we demonstrate that the lossless dispersion characteristics of the ISPP branches obtained in the paper are consistent with the angle-resolved reflection-absorption spectra of the GaAlAs-based realistic plasmonic resonators.

  10. Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth

    Science.gov (United States)

    Ito, Tomonori; Akiyama, Toru; Nakamura, Kohji

    2009-01-01

    Phase diagrams of GaAs and GaN surfaces are systematically investigated by using our ab initio-based approach in conjunction with molecular beam epitaxy (MBE). The phase diagrams are obtained as a function of growth parameters such as temperature and beam equivalent pressure (BEP). The versatility of our approach is exemplified by the phase diagram calculations for GaAs(0 0 1) surfaces, where the stable phases and those phase boundaries are successfully determined as functions of temperature and As 2 and As 4 BEPs. The initial growth processes are clarified by the phase diagram calculations for GaAs(1 1 1)B-(2×2). The calculated results demonstrate that the As-trimer desorption on the GaAs(1 1 1)B-(2×2) with Ga adatoms occurs beyond 500-700 K while the desorption without Ga adatoms does beyond 800-1000 K. This self-surfactant effect induced by Ga adsorption crucially affects the initial growth of GaAs on the GaAs(1 1 1)B-(2×2). Furthermore, the phase diagram calculations for GaN(0 0 0 1) suggests that Ga adsorption or desorption during GaN MBE growth can easily change the pseudo-(1×1) to the (2×2)-Ga via newly found (1×1) and vice versa. On the basis of this finding, the possibility of ghost island formation during MBE growth is discussed.

  11. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  12. Development of scanning electrochemical microscopy for the investigation of photocatalysis at semiconductor surfaces

    International Nuclear Information System (INIS)

    Fonseca, Sofia Margarida Martins Costa da

    2002-01-01

    This thesis is concerned with the development and application of scanning electrochemical microscopy (SECM) to investigate interfacial photoelectrochemical processes occurring at supported TiO 2 surfaces. The new SECM approach, involving both amperometric and potentiometric electrodes, was used to monitor interfacial photoprocesses with high spatial resolution. A new in situ photoelectrochemical approach to chemical actinometry has been developed and used to determine the light flux through a quartz fibre employed in the SECM system. In this system an ultramicroelectrode (UME) probe is positioned with high precision at a known distance close to a TiO 2 -coated fibre and used to detect reactants or products of the ongoing photodegradation process. The microelectrochemical actinometry approach was developed using the well-known liquid phase potassium ferrioxalate actinometer. The approach involved recording the steady-state current for Fe(lll) reduction at an SECM tip positioned close to the fibre. A step function in the light flux (off-on) was then applied and the resulting chronoamperometric behaviour due to the reduction of Fe(lll) at the UME was recorded as a function of tip-fibre separation distance. A theoretical model has been developed to simulate experimental current-time profiles, which allowed the light flux through the quartz fibre to be quantified. An experimental approach to investigating the photoelectrochemical reduction of oxygen at UV-illuminated TiO 2 surfaces, in aqueous aerated and oxygenated electrolyte solutions, in the absence and presence of hole scavengers, has been developed. In this new approach the chronoamperometric behaviour for oxygen reduction was recorded at an UME tip after stepping the light flux at a back-illuminated TiO 2 film on and off. The kinetics of the reduction process were interpreted through various theoretical models proposed in the literature. This experimental approach demonstrated a significant depletion of the

  13. Preparation of transparent BN films with superhydrophobic surface

    International Nuclear Information System (INIS)

    Li Guoxing; Liu Yi; Wang Bo; Song Xuemei; Li Er; Yan Hui

    2008-01-01

    A novel approach was investigated to obtain the superhydrophobicity on surfaces of boron nitride films. In this method boron nitride films were deposited firstly on Si(1 0 0) and quartz substrate using a radio frequency (RF) magnetron sputtering system, and then using CF 4 plasma treatment, the topmost surface area can be modified systematically. The results have shown that the water contact angle on such surfaces can be tuned from 67 deg. to 159 deg. The films were observed to be uniform. The surfaces of films consist of micro-features, which were confirmed by Atomic Force Micrograph. The chemical bond states of the films were determined by Fourier Transform Infrared (FTIR) Spectroscopy, which indicate the dominance of B-N binding. According to the X-ray Photoelectron Spectroscopy analysis, the surface of film is mainly in BN phase. The micro-feature induced surface roughness is responsible for the observed superhydrophobic nature. The water contact angles measured on these surfaces can be modeled by the Cassie's formulation

  14. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  15. Gas-surface dynamics and charging effects during plasma processing of semiconductors

    Science.gov (United States)

    Hwang, Gyeong Soon

    This thesis work attempts to elucidate the fundamentals of gas-surface interactions that occur during plasma etching. Controlled experiments using hyperthermal fluorine beams have enabled us to uncover the scattering dynamics at complex surfaces similar to those encountered in etching. By analyzing energy and angular distributions of inelastically scattered F atoms, we were able to distinguish single- and multiple-bounce scattering and to develop models to describe these exit channels. Furthermore, we found that hard-sphere collision kinematics can capture well the energy transfer of the hyperthermal F atoms onto fluorinated silicon surfaces. Based on the fundamental scattering information, we have developed a kinetic model that is described by two parameters: (1) direct inelastic scattering probability and (2) sticking (reaction) probability. These parameters are formulated as a function of the incident energy and angle of F atoms. By incorporating the empirical kinetic model into Monte Carlo based profile evolution simulations, we have unraveled the origin of many etch profile peculiarities which appear during hyperthermal F-beam etching, such as microtrenching, inverse microloading, and undercutting. The kinetic model has been used to describe successfully etching in Cl2-plasmas. For the study of pattern-dependent charging, we have developed a numerical model that combines plasma, sheath, and charging dynamics. The charging simulations illustrate that the directionality difference between ions and electrons arriving at the wafer, brought about by the sheath, causes differential charging on patterned areas even when the plasma is uniform. Using the newly developed charging model, we have investigated gate oxide damage. The results show that a potential drop across the thin gate oxide caused by differential microstructure charging is primarily responsible for gate oxide degradation by driving Fowler-Nordheim stress currents. In general, increasing the flux of low

  16. Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals

    International Nuclear Information System (INIS)

    Galiy, P.V.; Musyanovych, A.V.; Nenchuk, T.M.

    2005-01-01

    The results of the quantitative X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In 4 Se 3 crystals are presented. The carbon coating formation occurs as the result of interaction of the air and residual gases atmosphere in ultra high vacuum (UHV) Auger spectrometer chamber with atomic clean interlayer cleavage surfaces of the crystals. The kinetics and peculiarities of interfacial carbon layer formation on the cleavage surfaces of the crystals, elemental and phase composition of the interface have been studied by quantitative XPS, AES and mass-spectroscopy

  17. Engineering interfacial properties of organic semiconductors through soft-contact lamination and surface functionalization

    Science.gov (United States)

    Shu, Andrew Leo

    Organic electronics is a topic of interest due to its potential for low temperature and solution processing for large area and flexible applications. Examples of organic electronic devices are already available on the market; however these are, in general, still rather expensive. In order to fully realize inexpensive and efficient organic electronics, the properties of organic films need to be understood and strategies developed to take advantage of these properties to improve device performance. This work focuses on two strategies that can be used to control charge transport at interfaces with active organic semiconducting thin films. These strategies are studied and verified with a range of photoemission spectroscopy, surface probe microscopy, and electrical measurements. Vacuum evaporated molecular organic devices have long used layer stacking of different materials as a method of dividing roles in a device and modifying energy level alignment to improve device performance and efficiency. Applying this type of architecture for solution-processed devices, on the other hand, is nontrivial, as an issue of removal of or mixing with underlying layers arises. We present and examine here soft-contact lamination as a viable technique for depositing solution-processed multilayer structures. The energetics at homojunctions of a couple of air-stable polymers is investigated. Charge transport is then compared between a two-layer film and a single-layer film of equivalent thicknesses. The interface formed by soft-contact lamination is found to be transparent with respect to electronic charge carriers. We also propose a technique for modifying electronic level alignment at active organic-organic heterojunctions using dipolar self-assembled monolayers (SAM). An ultra-thin metal oxide is first deposited via a gentle low temperature chemical vapor deposition as an adhesion layer for the SAM. The deposition is shown to be successful for a variety of organic films. A series of

  18. Nanomorphology Effects in Semiconductors with Native Ferromagnetism: Hierarchical Europium (II) Oxide Tubes Prepared via a Topotactic Nanostructure Transition.

    Science.gov (United States)

    Trepka, Bastian; Erler, Philipp; Selzer, Severin; Kollek, Tom; Boldt, Klaus; Fonin, Mikhail; Nowak, Ulrich; Wolf, Daniel; Lubk, Axel; Polarz, Sebastian

    2018-01-01

    Semiconductors with native ferromagnetism barely exist and defined nanostructures are almost unknown. This lack impedes the exploration of a new class of materials characterized by a direct combination of effects on the electronic system caused by quantum confinement effects with magnetism. A good example is EuO for which currently no reliable routes for nanoparticle synthesis can be established. Bottom-up approaches applicable to other oxides fail because of the labile oxidation state +II. Instead of targeting a direct synthesis, the two steps-"structure control" and "chemical transformation"-are separated. The generation of a transitional, hybrid nanophase is followed by its conversion into EuO under full conservation of all morphological features. Hierarchical EuO materials are now accessible in the shape of oriented nanodisks stacked to tubular particles. Magnetically, the coupling of either vortex or onion states has been found. An unexpected temperature dependence is governed by thermally activated transitions between these states. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Evaluation of Alternative Peel Ply Surface Preparation Methods of SC-15 Epoxy / Fiberglass Composite Surfaces for Secondary Bonding

    Science.gov (United States)

    2014-01-01

    prepared composite surfaces. Examination of the surface compositions will show differences in makeup and identify any transfer of contaminants...by carefully brushing the specimen with a lint-free cloth followed by a high-pressure nitrogen gas stream. 3.2 X-ray Photospectroscopy (XPS

  20. Facile preparation of superhydrophobic surface with high adhesive ...

    Indian Academy of Sciences (India)

    in daily life (Yang et al 2007; Zhang et al 2011; Ogihara et al. 2012) ... models to explain the wetting phenomena on rough surfaces that leads to ... then tetraethylorthosilicate (TEOS) dissolved in isopropanol ... All scale bars are of 2 μm. ... rated by the air trapped in a closed 'liquid–solid' system ... This feature can be used in ...

  1. Method for plasma surface treating and preparation of membrane layers

    NARCIS (Netherlands)

    1992-01-01

    The invention relates to an apparatus suitable for plasma surface treating (e.g. forming a membrane layer on a substrate) which comprises a plasma generation section (2) which is in communication via at least one plasma inlet means (4) (e.g. a nozzle) with an enclosed plasma treating section (3)

  2. Preparation and High-temperature Anti-adhesion Behavior of a Slippery Surface on Stainless Steel.

    Science.gov (United States)

    Zhang, Pengfei; Huawei, Chen; Liu, Guang; Zhang, Liwen; Zhang, Deyuan

    2018-03-29

    Anti-adhesion surfaces with high-temperature resistance have a wide application potential in electrosurgical instruments, engines, and pipelines. A typical anti-wetting superhydrophobic surface easily fails when exposed to a high-temperature liquid. Recently, Nepenthes-inspired slippery surfaces demonstrated a new way to solve the adhesion problem. A lubricant layer on the slippery surface can act as a barrier between the repelled materials and the surface structure. However, the slippery surfaces in previous studies rarely showed high-temperature resistance. Here, we describe a protocol for the preparation of slippery surfaces with high-temperature resistance. A photolithography-assisted method was used to fabricate pillar structures on stainless steel. By functionalizing the surface with saline, a slippery surface was prepared by adding silicone oil. The prepared slippery surface maintained the anti-wetting property for water, even when the surface was heated to 300 °C. Also, the slippery surface exhibited great anti-adhesion effects on soft tissues at high temperatures. This type of slippery surface on stainless steel has applications in medical devices, mechanical equipment, etc.

  3. Preparation of poly(2-chloroaniline) membrane and plasma surface modification

    International Nuclear Information System (INIS)

    Kir, E.; Oksuz, L.; Helhel, S.

    2006-01-01

    P2ClAn membranes were obtained from chemically synthesized poly(2-chloroaniline) (P2ClAn) by casting method. These membranes were cast from dimethyl formamide (DMF) and were in the undoped state. P2ClAn membranes were characterized by Fourier infrared spectroscopy and scanning electron microscopy. Measurements of water content capacity, membrane thickness and ion-exchange capacity of the cast membranes were carried out. P2ClAn membranes were treated by electron cylotron resonance (ECR) plasma for surface modification. Plasma treatment has been successfully utilized for improving the surface properties of P2ClAn membranes such as increasing pore diameters and number of pores for better anion or molecule transportation

  4. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  5. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

    Science.gov (United States)

    Zaidi, Z. H.; Lee, K. B.; Roberts, J. W.; Guiney, I.; Qian, H.; Jiang, S.; Cheong, J. S.; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, P. R.; Houston, P. A.

    2018-05-01

    In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

  6. Nanodiamond preparation and surface characterization for biological applications

    Science.gov (United States)

    Woodhams, Ben J.; Knowles, Helena S.; Kara, Dhiren M.; Atatüre, Mete; Bohndiek, Sarah E.

    2017-02-01

    Nanodiamonds contain stable fluorescent emitters and hence can be used for molecular fluorescence imaging and precision sensing of electromagnetic fields. The physical properties of these emitters together with their low reported cytotoxicity make them attractive for biological imaging applications. The controlled application of nanodiamonds for cellular imaging requires detailed understanding of surface chemistry, size ranges and aggregation, as these can all influence cellular interactions. We compared these characteristics for graphitic and oxidized nanodiamonds. Oxidation is generally used for surface functionalization, and was optimized by Thermogravimetric Analysis, achieved by 445+/-5°C heating in air for 5 hours, then confirmed via Raman and Infrared spectroscopies. Size ranges and aggregation were assessed using Atomic Force Microscopy and Dynamic Light Scattering. Biocompatibility in breast cancer cell lines was measured using a proliferation assay. Heating at 445+/-5°C reduced the Raman signal of graphitic carbon (1575 cm-1) as compared to that of diamond (1332 cm-1) from 0.31+/-0.07 Raman intensity units to 0.07+/-0.04. This temperature was substantially below the onset of major mass loss (observed at 535+/-1°C) and therefore achieved cost efficiency, convenience and high yield. Graphitic and oxidized nanodiamonds formed aggregates in water, with a mean particle size of 192+/-4nm and 166+/-2nm at a concentration of 66μg/mL. We then applied the graphitic and oxidized nanodiamonds to cells in culture at 1μg/mL and found no significant change in the proliferation rate (-5+/-2% and -1+/-3% respectively). Nanodiamonds may therefore be suitable for development as a novel transformative tool in the life sciences.

  7. Electrical and optical study of transparent V-based oxide semiconductors prepared by magnetron sputtering under different conditions

    Directory of Open Access Journals (Sweden)

    E. Prociow

    2011-04-01

    Full Text Available This work is focused on structural, optical and electrical behaviors of vanadium-based oxide thin films prepared by magnetron sputtering under different conditions. Thin films have been deposited on glass substrates from metallic vanadium target at low sputtering pressure. Different working gases: argon/oxygen mixture, and especially pure oxygen gas, have been applied. Results of X-ray diffraction together with optical transmission and temperature- dependent electrical resistivity measurements have been presented. Transmission coefficient, cut-off wavelength and the width of the optical band gap have been calculated from optical measurements. The d.c. resistivity values at room temperature and thermal activation energy have been obtained from electrical investigations. The influence of sputtering process conditions on optical and electrical properties has been discussed.

  8. Thermal-driven attachment of gold nanoparticles prepared with ascorbic acid onto indium tin oxide surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Aziz, Md. Abdul; Oyama, Munetaka, E-mail: oyama.munetaka.4m@kyoto-u.ac.jp [Kyoto University, Department of Material Chemistry, Graduate School of Engineering (Japan)

    2013-05-15

    Thermal-driven attachment of gold nanoparticles (AuNPs), of which size was less than 50 nm, onto the surfaces of indium tin oxide (ITO) is reported as a new phenomenon. This was permitted by preparing AuNPs via the reduction of hydrogen tetrachloroaurate (HAuCl{sub 4}) with ascorbic acid (AA). While the AuNPs prepared via the AA reduction sparsely attached on the surface of ITO even at room temperature, a heat-up treatment at ca. 75 Degree-Sign C caused denser attachment of AuNPs on ITO surfaces. The attached density and the homogeneity after the thermal treatment were better than those of AuNP/ITO prepared using 3-aminopropyl-trimethoxysilane linker molecules. The denser attachment was observed similarly both by the immersion of ITO samples after the preparations of AuNPs by AA and by the in situ preparation of AuNPs with AA together with ITO samples. Thus, it is considered that the thermal-driven attachment of AuNPs would occur after the formation of AuNPs in the aqueous solutions, not via the growth of AuNPs on ITO surfaces. The preparation of AuNPs with AA would be a key for the thermal-driven attachment because the same attachments were not observed for AuNPs prepared with citrate ions or commercially available tannic acid-capped AuNPs.

  9. Shear-bond-strength of orthodontic brackets to aged nano-hybrid composite-resin surfaces using different surface preparation.

    Science.gov (United States)

    Demirtas, Hatice Kubra; Akin, Mehmet; Ileri, Zehra; Basciftci, Faruk Ayhan

    2015-01-01

    The aim of this study was to evaluate the effects of different surface preparation methods on the shear bond strength (SBS) of orthodontic metal brackets to aged nano-hybrid resin composite surfaces in vitro. A total of 100 restorative composite resin discs, 6 mm in diameter and 3 mm thick, were obtained and treated with an ageing procedure. After ageing, the samples were randomly divided as follows according to surface preparation methods: (1)Control, (2)37% phosphoric acid gel, (3)Sandblasting, (4)Diamond bur, (5)Air-flow and 20 central incisor teeth were used for the control etched group. SBS test were applied on bonded metal brackets to all samples. SBS values and residual adhesives were evaluated. Analysis of variance showed a significant difference (porthodontic metal brackets to nano-hybrid composite resin surfaces.

  10. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  11. Cold pressure welding of aluminium-steel blanks: Manufacturing process and electrochemical surface preparation

    Science.gov (United States)

    Schmidt, Hans Christian; Homberg, Werner; Orive, Alejandro Gonzalez; Grundmeier, Guido; Hordych, Illia; Maier, Hans Jürgen

    2018-05-01

    In this study the manufacture of aluminium-steel blanks by cold pressure welding and their preparation for a welding process through electrochemical surface treatment are investigated and discussed. The cold pressure welding process was done with an incremental rolling tool that allows for the partial pressure welding of two blanks along a prepared path. The influence of the surface preparation by electrochemical deposition of bond promoting organosilane-based agents and roughening on a nano-scale is investigated and compared to conventional surface treatments. Coating the surfaces with a thin organosilane-based film incorporating specific functional groups should promote additional bonding between the mating oxide layers; its influence on the total weld strength is studied. Pressure welding requires suitable process strategies, and the current advances in the proposed incremental rolling process for the combination of mild steel and aluminium are presented.

  12. Facile preparation of self-healing superhydrophobic CeO2 surface by electrochemical processes

    Science.gov (United States)

    Nakayama, Katsutoshi; Hiraga, Takuya; Zhu, Chunyu; Tsuji, Etsushi; Aoki, Yoshitaka; Habazaki, Hiroki

    2017-11-01

    Herein we report simple electrochemical processes to fabricate a self-healing superhydrophobic CeO2 coating on Type 304 stainless steel. The CeO2 surface anodically deposited on flat stainless steel surface is hydrophilic, although high temperature-sintered and sputter-deposited CeO2 surface was reported to be hydrophobic. The anodically deposited hydrophilic CeO2 surface is transformed to hydrophobic during air exposure. Specific accumulation of contaminant hydrocarbon on the CeO2 surface is responsible for the transformation to hydrophobic state. The deposition of CeO2 on hierarchically rough stainless steel surface produces superhydrophobic CeO2 surface, which also shows self-healing ability; the surface changes to superhydrophilic after oxygen plasma treatment but superhydrophobic state is recovered repeatedly by air exposure. This work provides a facile method for preparing a self-healing superhydrophobic surface using practical electrochemical processes.

  13. Epitaxial Growth, Surface, and Electronic Properties of Unconventional Semiconductors: RE-V/III-V Nanocomposites and Semiconducting Half Heusler Alloys

    Science.gov (United States)

    2014-09-01

    10.1103/PhysRevLett.45.494. [2] D.C. Tsui, H.L. Stormer , and A.C. Gossard. Two-dimensional magnetotransport in the extreme quantum limit. Phys. Rev. Lett...5] R. Dingle, H. L. Stormer , A. C. Gossard, and W. Wiegmann. Electron mobil- ities in modulation-doped semiconductor heterojunction superlattices

  14. Preparation of surface conductive and highly reflective silvered polyimide films by surface modification and in situ self-metallization technique

    International Nuclear Information System (INIS)

    Wu Zhanpeng; Wu Dezhen; Qi Shengli; Zhang Teng; Jin Riguang

    2005-01-01

    Double surface conductive and reflective flexible silvered polyimide films have been prepared by alkali hydroxylation of polyimide film surface and incorporation of silver ions through subsequent ion exchange. Thermal curing of silver(I) polyamate precursor leads to re-cycloimidization of modified surface with concomitant silver reduction, yielding a reflective and conductive silver surface approaching that of native metal. The reflective and conductive surface evolves only when the cure temperature rises to 300 deg. C. The metallized films usually retain the essential mechanical properties of the parent films. Films were characterized by transmission electron microscopy (TEM), scanning electron microscopy and tapping mode atomic force microscopy (AFM). AFM demonstrates that the diameter of close-packed silver particles of the silver layers was about 50-150 nm. TEM shows that thickness of silver layer on the polyimide film surface is about 400-600 nm

  15. Edges in CNC polishing: from mirror-segments towards semiconductors, paper 1: edges on processing the global surface.

    Science.gov (United States)

    Walker, David; Yu, Guoyu; Li, Hongyu; Messelink, Wilhelmus; Evans, Rob; Beaucamp, Anthony

    2012-08-27

    Segment-edges for extremely large telescopes are critical for observations requiring high contrast and SNR, e.g. detecting exo-planets. In parallel, industrial requirements for edge-control are emerging in several applications. This paper reports on a new approach, where edges are controlled throughout polishing of the entire surface of a part, which has been pre-machined to its final external dimensions. The method deploys compliant bonnets delivering influence functions of variable diameter, complemented by small pitch tools sized to accommodate aspheric mis-fit. We describe results on witness hexagons in preparation for full size prototype segments for the European Extremely Large Telescope, and comment on wider applications of the technology.

  16. Preparation of electrodes on cfrp composites with low contact resistance comprising laser-based surface pre-treatment

    KAUST Repository

    Almuhammadi, Khaled Hamdan

    2016-12-29

    Various examples are provided related to the preparation of electrodes on carbon fiber reinforced polymer (CFRP) composites with low contact resistance. Laser-based surface preparation can be used for bonding to CFRP composites. In one example, a method includes preparing a pretreated target area on a CFRP composite surface using laser pulsed irradiation and bonding an electrode to exposed fibers in the pretreated target area. The surface preparation can allow the electrode to have a low contact resistance with the CFRP composite.

  17. Inter-subband optical absorption in an inversion layer on a semiconductor surface in tilted magnetic fields. Progress report, July 1, 1980-June 30, 1981

    International Nuclear Information System (INIS)

    O'Connell, R.F.

    1981-01-01

    Cyclotron-resonance experiments on inversion layer electrons in Si (001) metal-oxide-semiconductor field-effect transistors (MOSFET's) have produced many surprising and unexplained results. This has motivated the investigation of the use of other magneto-optical phenomena in MOS systems. Emphasis has been on the Faraday rotation effect. The conditions necessary for achieving a null Faraday rotation, as well as a null ellipticity have been examined. The calculation of theta for the Appel-Overhauser model for the surface space-charge layer in Si has also been studied

  18. Studies on surface structures and mechanism of photocatalytic action of semiconductor oxides; Handotai hikari shokubai no hyomen kozo seigyo to sayo kiko kaimei ni kansuru kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Takeuchi, H; Sona, S; Koike, H; Hori, H; Negishi, N; Kohara, H; Ibusuki, A [National Institute for Resources and Environment, Tsukuba (Japan); Vakhtin, A; Borovkov, V [New Energy and Industrial Technology Development Organization, Tokyo, (Japan)

    1997-02-01

    Studies are made to define the working mechanism of semiconductor photocatalysts such as TiO2 and to establish designing guidelines for improving on their activity and functions. TiO2 in the air actively produces oxygen seeds for the oxidation and removal of NOx, etc. It is desired that a catalyst have a specific surface area large enough to retain the product of its action. To meet the need, a thin-film photocatalyst which is an aggregate of TiO2 crystals is produced by burning a film of a sol/gel system of reaction doped with macromolecules. This product has a larger specific surface area and is higher in pollutant-removing performance, and may be put into practical use. In another experiment, metal-carrying particles TiO2 suspended in water are employed for the reduction of CO2. Though the main product of catalysts carrying Pt or Pd is methane, a photocatalyst carrying RuO2 produces acetic acid mainly and loses less activity with the passage of time. A hybrid photocatalyst is composed of an organic pigment and inorganic semiconductor, synthesized through a covalent bond between a sililated-surface thin TiO2 film and porphyrin. It is confirmed that the newly developed process brings about an increase in electron migration efficiency. 3 figs.

  19. Polysulfobetaine films prepared by electrografting technique for reduction of biofouling on electroconductive surfaces

    International Nuclear Information System (INIS)

    Stach, Marek; Kronekova, Zuzana; Kasak, Peter; Kollar, Jozef; Pentrak, Martin; Micusik, Matej; Chorvat, Dusan; Nunney, Tim S.; Lacik, Igor

    2011-01-01

    The sulfobetaine films were prepared on stainless steel and golden surfaces. In the first step, the poly(2-(dimethylamino)ethyl methacrylate) film was created by employing the electrografting polymerization technique. In the second step, this film was modified to polysulfobetaine, i.e. the polymer film bearing the zwitterionic groups. The presence of the electrografted film and its modification were determined by contact angle measurements, infrared spectroscopy in reflectance mode and X-ray photoelectron spectroscopy. The prepared films were homogeneous with the thickness from about 5 to 26 nm as determined by X-ray photoelectron spectroscopy. The atomic force microscopy measurements showed the increase of surface roughness upon the surface coating. In vitro tests using adherent RAT-2 fibroblast cells and fluorescently labelled bovine serum albumin proteins showed that prepared polysulfobetaine films can be used in applications requiring the resistance against cell attachment and biofouling.

  20. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  1. On one peculiarity of the model describing the interaction of the electron beam with the semiconductor surface

    Science.gov (United States)

    Stepovich, M. A.; Amrastanov, A. N.; Seregina, E. V.; Filippov, M. N.

    2018-01-01

    The problem of heat distribution in semiconductor materials irradiated with sharply focused electron beams in the absence of heat exchange between the target and the external medium is considered by mathematical modeling methods. For a quantitative description of energy losses by probe electrons a model based on a separate description of the contributions of absorbed in the target and backscattered electrons and applicable to a wide class of solids and a range of primary electron energies is used. Using the features of this approach, the nonmonotonic dependence of the temperature of the maximum heating in the target on the energy of the primary electrons is explained. Some modeling results are illustrated for semiconductor materials of electronic engineering.

  2. Experimental investigation of energy resolution in a semiconductor detector (surface barrier and Si (Li) detector) in the detection of protons

    International Nuclear Information System (INIS)

    Nordborg, C.

    1974-05-01

    The action of electronic effects on the energy resolution of the detector is investigated. The results are applicable not only to protons but also to heavier charged particles. It should be possible to reach a resolution of about 6 to 7 keV for 10 MeV protons with electronic detectors. Magnetic spectrometers could achieve a resolution of 2 to 3 keV. It is convenient to use Peltier elements for cooling semiconductor spectrometers. (Auth.)

  3. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  4. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  5. Concatenation of electrochemical grafting with chemical or electrochemical modification for preparing electrodes with specific surface functionality

    International Nuclear Information System (INIS)

    Verma, Pallavi; Maire, Pascal; Novak, Petr

    2011-01-01

    Surface modified electrodes are used in electro-analysis, electro-catalysis, sensors, biomedical applications, etc. and could also be used in batteries. The properties of modified electrodes are determined by the surface functionality. Therefore, the steps involved in the surface modification of the electrodes to obtain specific functionality are of prime importance. We illustrate here bridging of two routes of surface modifications namely electrochemical grafting, and chemical or electrochemical reduction. First, by electrochemical grafting an organic moiety is covalently immobilized on the surface. Then, either by chemical or by electrochemical route the terminal functional group of the grafted moiety is transformed. Using the former route we prepared lithium alkyl carbonate (-O(CH 2 ) 3 OCO 2 Li) modified carbon with potential applications in batteries, and employing the latter we prepared phenyl hydroxyl amine (-C 6 H 4 NHOH) modified carbon which may find application in biosensors. Benzyl alcohol (-C 6 H 4 CH 2 OH) modified carbon was prepared by both chemical as well as electrochemical route. We report combinations of conjugating the two steps of surface modifications and show how the optimal route of terminal functional group modification depends on the chemical nature of the moiety attached to the surface in the electrochemical grafting step.

  6. Concatenation of electrochemical grafting with chemical or electrochemical modification for preparing electrodes with specific surface functionality

    Energy Technology Data Exchange (ETDEWEB)

    Verma, Pallavi; Maire, Pascal [Paul Scherrer Institut, Electrochemistry Laboratory, Section Electrochemical Energy Storage, CH-5232 Villigen PSI (Switzerland); Novak, Petr, E-mail: petr.novak@psi.c [Paul Scherrer Institut, Electrochemistry Laboratory, Section Electrochemical Energy Storage, CH-5232 Villigen PSI (Switzerland)

    2011-04-01

    Surface modified electrodes are used in electro-analysis, electro-catalysis, sensors, biomedical applications, etc. and could also be used in batteries. The properties of modified electrodes are determined by the surface functionality. Therefore, the steps involved in the surface modification of the electrodes to obtain specific functionality are of prime importance. We illustrate here bridging of two routes of surface modifications namely electrochemical grafting, and chemical or electrochemical reduction. First, by electrochemical grafting an organic moiety is covalently immobilized on the surface. Then, either by chemical or by electrochemical route the terminal functional group of the grafted moiety is transformed. Using the former route we prepared lithium alkyl carbonate (-O(CH{sub 2}){sub 3}OCO{sub 2}Li) modified carbon with potential applications in batteries, and employing the latter we prepared phenyl hydroxyl amine (-C{sub 6}H{sub 4}NHOH) modified carbon which may find application in biosensors. Benzyl alcohol (-C{sub 6}H{sub 4}CH{sub 2}OH) modified carbon was prepared by both chemical as well as electrochemical route. We report combinations of conjugating the two steps of surface modifications and show how the optimal route of terminal functional group modification depends on the chemical nature of the moiety attached to the surface in the electrochemical grafting step.

  7. Implant surface preparation in the surgical treatment of experimental peri-implantitis with autogenous bone graft and ePTFE membrane in cynomolgus monkeys

    DEFF Research Database (Denmark)

    Schou, Søren; Holmstrup, Palle; Jørgensen, Torben

    2003-01-01

    peri-implantitis; treatment; implant surface preparation; nonhuman primates; histology; stereology......peri-implantitis; treatment; implant surface preparation; nonhuman primates; histology; stereology...

  8. Quantitative morphological and compositional evaluation of laboratory prepared aluminoborosilicate glass surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Yuxuan, E-mail: yg4@alfred.edu; Wren, Anthony W.; Mellott, Nathan P.

    2015-01-01

    Graphical abstract: - Highlights: • Aluminoborosilicate glass surfaces were prepared through both melting and polishing/etching and the surface composition and morphology were quantified as a function of processing method. • Glass surface morphology was quantified using PSD analysis, followed by both fractal and ABC model fitting, resulting in a comprehensive description of the spatial distribution of roughness. • All melt surfaces showed a depletion in Na, Ca, and B with respect to the bulk composition. Polished/etched surfaces showed a depletion in Na, B, and Al with respect to the bulk composition. • It was found that increasing heat treatment temperature of melt surfaces lead to a decrease in equivalent roughness and an increased spatial homogeneity of roughness while etching of polished ISG glass surfaces decreases the roughness and spatial distribution homogeneity of roughness. - Abstract: Surface finishing techniques including polishing, etching and heat treatment can modify the topography and the surface chemical composition of glasses. It is widely acknowledged that atomic force microscopy (AFM) can be used to quantify the morphology of surfaces, providing various parameters including average, peak-to-valley, and apparent root-mean-square roughness. Furthermore advanced power spectral density (PSD) analysis of AFM-derived surface profiles offers quantification of the spatial homogeneity of roughness values along different wavelengths, resulting in parameters including equivalent RMS, Hurst exponent, and fractal dimension. Outermost surface (∼8 nm) chemical composition can be quantitatively measured by X-ray photoelectron spectroscopy. In this paper, we first developed a series of surface finishing methods for an aluminoborosilicate glass system by polishing, etching or heat treatment. The chemical composition and environment of prepared glass surfaces were quantified by XPS and topographical analysis was carried out by fractal and k

  9. Organic surfaces exposed by self-assembled organothiol monolayers: Preparation, characterization, and application

    Science.gov (United States)

    Kind, Martin; Wöll, Christof

    2009-07-01

    Organic surfaces play a major role in materials science. Most surfaces that we touch in our daily lives are made from organic materials, e.g., vegetables, fruit, skin, wood, and textiles made from natural fibers. In the context of biology, organic surfaces play a prominent role too, proteins docking onto cell surfaces are a good example. To better understand the characteristics of organic surfaces, including physico-chemical properties like wettability or chemical reactivities and physical properties like friction and lubrication, a structurally well-defined model system that can be investigated with numerous analytical techniques is desirable. In the last two decades, one particular system, self-assembled monolayers or SAMs, have demonstrated their suitability for this purpose. In particular, organothiols consisting of an organic molecule with an attached SH-group are well suited to fabricating structurally well-defined adlayers of monolayer thickness on gold substrates using a simple preparation procedure. These ultrathin monolayers expose an organic surface with properties that can be tailored by varying the type of organothiol employed. After a short introduction into the preparation of SAMs, this article provides an overview of the possibilities and limitations of organic surfaces exposed by Au-thiolate SAMs. Applications are as diverse as the metallization of organic surfaces, a fundamental problem in materials science, and the fabrication of surfaces that resist the adsorption of proteins. In addition to a number of different case studies, we will also discuss the most powerful analytical techniques needed to characterize these important model systems.

  10. Preparing Al-Mg Substrate for Thermal Spraying: Evaluation of Surface State After Different Pretreatments

    Science.gov (United States)

    Lukauskaitė, R.; Valiulis, A. V.; Černašėjus, O.; Škamat, J.; Rębiś, J. A.

    2016-08-01

    The article deals with the pretreatment technique for preparing the surface of aluminum alloy EN AW 5754 before thermal spray. The surface after different pretreatments, including degreasing with acetone, chemical etching with acidic and alkali solutions, grit-blasting, cathodic cleaning, and some combinations of these techniques, has been studied. The investigation of pre-treated surfaces covered the topographical study (using scanning electron microscopy, atomic force microscopy, and 3D profilometry), the chemical analysis by x-ray photoelectron spectroscopy, the evaluation of surface wettability (sessile drop method), and the assessment of surface free energy. Compared with all the techniques used in present work, the cathodic cleaning and its combination with grit-blasting provide the most preferable chemistry of the surface. Due to the absence of hydroxides at the surface and, possible, due to the diffusion of magnesium to the surface of substrate, the surface wettability and the surface free energy have been significantly improved. No direct correlation between the surface topography and the surface wettability has been established.

  11. Preparation of electrodes on cfrp composites with low contact resistance comprising laser-based surface pre-treatment

    KAUST Repository

    Almuhammadi, Khaled Hamdan; Lubineau, Gilles; Alfano, Marco Francesco; Buttner, Ulrich

    2016-01-01

    Various examples are provided related to the preparation of electrodes on carbon fiber reinforced polymer (CFRP) composites with low contact resistance. Laser-based surface preparation can be used for bonding to CFRP composites. In one example, a

  12. Structural and optical properties of surface-hydrogenated silicon nanocrystallites prepared by reactive pulsed laser ablation

    International Nuclear Information System (INIS)

    Makino, Toshiharu; Inada, Mitsuru; Umezu, Ikurou; Sugimura, Akira

    2005-01-01

    Pulsed laser ablation (PLA) in an inert background gas is a promising technique for preparing Si nanoparticles. Although an inert gas is appropriate for preparing pure material, a reactive background gas can be used to prepare compound nanoparticles. We performed PLA in hydrogen gas to prepare hydrogenated silicon nanoparticles. The mean diameter of the primary particles measured using transmission electron microscopy was approximately 5 nm. The hydrogen content in the deposits was very high and estimated to be about 20%. The infrared absorption corresponding to Si-H n (n = 1, 2, 3) bonds on the surface were observed at around 2100 cm -1 . The Raman scattering peak corresponding to crystalline Si was observed, and that corresponding to amorphous Si was negligibly small. These results indicate that the Si nanoparticles were not an alloy of Si and hydrogen but Si nanocrystallite (nc-Si) covered by hydrogen or hydrogenated amorphous silicon. This means that PLA in reactive H 2 gas is a promising technique for preparing surface passivated nc-Si. The deposition mechanism and optical properties of the surface passivated silicon nanocrystallites are discussed

  13. Heat Generation on Implant Surface During Abutment Preparation at Different Elapsed Time Intervals.

    Science.gov (United States)

    Al-Keraidis, Abdullah; Aleisa, Khalil; Al-Dwairi, Ziad Nawaf; Al-Tahawi, Hamdi; Hsu, Ming-Lun; Lynch, Edward; Özcan, Mutlu

    2017-10-01

    The purpose of this study was to evaluate heat generation at the implant surface caused by abutment preparation using a diamond bur in a high-speed dental turbine in vitro at 2 different water-coolant temperatures. Thirty-two titanium-alloy abutments were connected to a titanium-alloy implant embedded in an acrylic resin placed within a water bath at a controlled temperature of 37°C. The specimens were equally distributed into 2 groups (16 each). Group 1: the temperature was maintained at 20 ± 1°C; and group 2: the temperature was maintained at 32 ± 1°C. Each abutment was prepared in the axial plane for 1 minute and in the occlusal plane for 1 minute. The temperature of the heat generated from abutment preparation was recorded and measured at 3 distinct time intervals. Water-coolant temperature (20°C vs 32°C) had a statistically significant effect on the implant's temperature change during preparation of the abutment (P water-coolant temperature of 20 ± 1°C during preparation of the implant abutment decreased the temperature recorded at the implant surface to 34.46°C, whereas the coolant temperature of 32 ± 1°C increased the implant surface temperature to 40.94°C.

  14. Preparation of antinutrients-reduced dhokla using response surface process optimisation

    NARCIS (Netherlands)

    Sharma, Anand; Kumari, Sarita; Nout, Martinus J.R.; Sarkar, Prabir K.

    2018-01-01

    Dhokla, a popular indigenous savoury dish of India, is prepared by soaking bengalgram dal and rice, grinding separately, mixing the batters, and spontaneously fermenting and steaming of mixed batter. Central composite rotatable response surface designs for soaking, fermentation and steaming at

  15. Aan der Waals terminated silicon(111) surfaces and interfaces. Preparation, morphology, and electronic properties

    International Nuclear Information System (INIS)

    Fritsche, R.

    2004-01-01

    The aim of this thesis is the implementation of the concept of the quasi-van der Waals epitaxy as a new perspective for the integration of reactive and lattice-defect fitted materials into the silicon technology. The experimental characterization of this approach pursues in two subsequent sections. First the chemical and electronic passivation of a three-dimensional substrate (silicon) is studied by means of an ultrathin buffer layer from the material class of the layered-lattice chalcogenides (GaSe). The substrate surface (Si(111):GaSe) modified in this way possesses an inert van der Waals surface and serves in the following as base for the deposition of the against the non-passivated substrate really reactive and lattice-defect fitted materials (II-VI-compound semiconductors and metals) The characterization of the electronic and chemical properties of the surfaces and interfaces pursues with highly resolved photoelectron spectroscopy (SXPS). The results are supplemented by the characterization of the morphology by the diffraction of low-energy electrons (LEED) and the scanning tunnel microscopy (STM)

  16. Preparation of high surface area and high conductivity polyaniline nanoparticles using chemical oxidation polymerization technique

    Science.gov (United States)

    Budi, S.; Yusmaniar; Juliana, A.; Cahyana, U.; Purwanto, A.; Imaduddin, A.; Handoko, E.

    2018-03-01

    In this work, polyaniline nanoparticles were synthesized using a chemical oxidation polymerization technique. The ammonium peroxydisulfate (APS)/aniline ratio, APS dropping time, and polymerization temperature were optimized to increase the surface area and conductivity of the polyaniline.The Fourier-transform infrared (FTIR) spectrum confirmed the formation of emeraldine salt polyaniline. X-ray diffraction (XRD) patterns indicated that amorphous and crystalline phases of the polyaniline were formed with crystallinity less than 40%. Scanning electron microscope (SEM) micrographs showed that the finest nanoparticles with uniform size distribution were obtained at the polymerization temperature of 0°C. A surface area analyzer (SAA) showed that the highest Brunauer-Emmett-Teller surface area (SBET ) of 42.14 m2/gwas obtained from an APS/aniline ratio of 0.75 with a dropping time of 0 s at a polymerization temperature of 0°C. A four-point probe measurement conducted at 75–300K indicated relatively high conductivity of the semiconductor characteristic of the polyaniline.

  17. The study of sub-surface and interface characteristics of semiconductor heterostructures by slow positron implantation spectroscopy

    International Nuclear Information System (INIS)

    Baker, J.A.; Coleman, P.G.

    1989-01-01

    Experiments are described in which the controlled implantation of mono-energetic positrons is used to gain information non-destructively on epilayer and interface defects in semiconductor heterostructures. The implantation, and hence annihilation, profile is changed by varying the incident positron energy from 1 to 35 keV. Characteristics of the positron state at the annihilation site are reflected in the width of the measure Doppler-broadened annihilation line. The fractions of positrons annihilating from each state are deduced by solving the steady-state diffusion equation. The application of the technique is illustrated by application to a series of SiO 2 -Si samples. (author)

  18. Nonlinear interaction of infrared waves on a VO2 surface at a semiconductor-metal phase transition

    Science.gov (United States)

    Berger, N. K.; Zhukov, E. A.; Novokhatskii, V. V.

    1984-04-01

    Nonlinear interactions (including wavefront reversal) of light from CW or pulsed 10.6-micron CO2 lasers at the semiconductor-metal phase transition in a VO2 film are investigated experimentally. The results are presented in graphs and characterized in detail. The intensity reflection coefficients of the three-wave interactions are found to be 0.5 percent for a CW reference wave of intensity 900 mW/sq cm and 42 percent for a pulsed reference wave of threshold density 600-800 microjoule/sq cm.

  19. All-(111) surface silicon nanowire field effect transistor devices: Effects of surface preparations

    NARCIS (Netherlands)

    Masood, M.N.; Carlen, Edwin; van den Berg, Albert

    2014-01-01

    Etching/hydrogen termination of All-(111) surface silicon nanowire field effect (SiNW-FET) devices developed by conventional photolithography and plane dependent wet etchings is studied with X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and

  20. Double resonance capacitance spectroscopy (DORCAS): A new experimental technique for assignment of X-ray absorption peaks to surface sites of semiconductor

    CERN Document Server

    Ishii, M

    2003-01-01

    As a new microspectroscopy for semiconductor surface analysis using an X-ray beam, double resonance capacitance spectroscopy (DORCAS) is proposed. For a microscopic X-ray absorption measurement, a local capacitance change owing to X-ray induced emission of localized electrons is detected by a microprobe. The applied bias voltage V sub b dependence of the capacitance also provides information on the surface density of state. The resonance of the Fermi energy with a surface level by V sub b control makes possible the selection of the observable surface site in the X-ray absorption measurements, i.e. site-specific spectroscopy. The double resonance of the surface site selection (V sub b resonance) and the resonant X-ray absorption of the selected site (photon energy h nu resonance) enhances the capacitance signal. The DORCAS measurement of the GaAs surface shows correlation peaks at h nu=10.402 keV and V sub b =-0.4 V and h nu=10.429 keV and V sub b =+0.1 V, indicating that these resonant X-ray absorption peaks ...

  1. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  2. Preparation, Surface and Pore Structure of High Surface Area Activated Carbon Fibers from Bamboo by Steam Activation

    Directory of Open Access Journals (Sweden)

    Xiaojun Ma

    2014-06-01

    Full Text Available High surface area activated carbon fibers (ACF have been prepared from bamboo by steam activation after liquefaction and curing. The influences of activation temperature on the microstructure, surface area and porosity were investigated. The results showed that ACF from bamboo at 850 °C have the maximum iodine and methylene blue adsorption values. Aside from the graphitic carbon, phenolic and carbonyl groups were the predominant functions on the surface of activated carbon fiber from bamboo. The prepared ACF from bamboo were found to be mainly type I of isotherm, but the mesoporosity presented an increasing trend after 700 °C. The surface area and micropore volume of samples, which were determined by application of the Brunauer-Emmett-Teller (BET and t-plot methods, were as high as 2024 m2/g and 0.569 cm3/g, respectively. It was also found that the higher activation temperature produced the more ordered microcrystalline structure of ACF from bamboo.

  3. Preparation and Biocompatible Surface Modification of Redox Altered Cerium Oxide Nanoparticle Promising for Nanobiology and Medicine

    KAUST Repository

    Nanda, Himansu Sekhar

    2016-11-03

    The biocompatible surface modification of metal oxide nanoparticles via surface functionalization technique has been used as an important tool in nanotechnology and medicine. In this report, we have prepared aqueous dispersible, trivalent metal ion (samarium)-doped cerium oxide nanoparticles (SmCNPs) as model redox altered CNPs of biological relevance. SmCNP surface modified with hydrophilic biocompatible (6-{2-[2-(2-methoxy-ethoxy)-ethoxy]-ethoxy}-hexyl) triethoxysilane (MEEETES) were prepared using ammonia-induced ethylene glycol-assisted precipitation method and were characterized using a variety of complementary characterization techniques. The chemical interaction of functional moieties with the surface of doped nanoparticle was studied using powerful 13C cross polarization magic angle sample spinning nuclear magnetic resonance spectroscopy. The results demonstrated the production of the extremely small size MEEETES surface modified doped nanoparticles with significant reduction in aggregation compared to their unmodified state. Moreover, the functional moieties had strong chemical interaction with the surface of the doped nanoparticles. The biocompatible surface modification using MEEETES should also be extended to several other transition metal ion doped and co-doped CNPs for the production of aqueous dispersible redox altered CNPs that are promising for nanobiology and medicine.

  4. Preparation and Biocompatible Surface Modification of Redox Altered Cerium Oxide Nanoparticle Promising for Nanobiology and Medicine

    KAUST Repository

    Nanda, Himansu Sekhar

    2016-01-01

    The biocompatible surface modification of metal oxide nanoparticles via surface functionalization technique has been used as an important tool in nanotechnology and medicine. In this report, we have prepared aqueous dispersible, trivalent metal ion (samarium)-doped cerium oxide nanoparticles (SmCNPs) as model redox altered CNPs of biological relevance. SmCNP surface modified with hydrophilic biocompatible (6-{2-[2-(2-methoxy-ethoxy)-ethoxy]-ethoxy}-hexyl) triethoxysilane (MEEETES) were prepared using ammonia-induced ethylene glycol-assisted precipitation method and were characterized using a variety of complementary characterization techniques. The chemical interaction of functional moieties with the surface of doped nanoparticle was studied using powerful 13C cross polarization magic angle sample spinning nuclear magnetic resonance spectroscopy. The results demonstrated the production of the extremely small size MEEETES surface modified doped nanoparticles with significant reduction in aggregation compared to their unmodified state. Moreover, the functional moieties had strong chemical interaction with the surface of the doped nanoparticles. The biocompatible surface modification using MEEETES should also be extended to several other transition metal ion doped and co-doped CNPs for the production of aqueous dispersible redox altered CNPs that are promising for nanobiology and medicine.

  5. Preparation and Biocompatible Surface Modification of Redox Altered Cerium Oxide Nanoparticle Promising for Nanobiology and Medicine

    Directory of Open Access Journals (Sweden)

    Himansu Sekhar Nanda

    2016-11-01

    Full Text Available The biocompatible surface modification of metal oxide nanoparticles via surface functionalization technique has been used as an important tool in nanotechnology and medicine. In this report, we have prepared aqueous dispersible, trivalent metal ion (samarium-doped cerium oxide nanoparticles (SmCNPs as model redox altered CNPs of biological relevance. SmCNP surface modified with hydrophilic biocompatible (6-{2-[2-(2-methoxy-ethoxy-ethoxy]-ethoxy}-hexyl triethoxysilane (MEEETES were prepared using ammonia-induced ethylene glycol-assisted precipitation method and were characterized using a variety of complementary characterization techniques. The chemical interaction of functional moieties with the surface of doped nanoparticle was studied using powerful 13C cross polarization magic angle sample spinning nuclear magnetic resonance spectroscopy. The results demonstrated the production of the extremely small size MEEETES surface modified doped nanoparticles with significant reduction in aggregation compared to their unmodified state. Moreover, the functional moieties had strong chemical interaction with the surface of the doped nanoparticles. The biocompatible surface modification using MEEETES should also be extended to several other transition metal ion doped and co-doped CNPs for the production of aqueous dispersible redox altered CNPs that are promising for nanobiology and medicine.

  6. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  7. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  8. Insights into the superhydrophobicity of metallic surfaces prepared by electrodeposition involving spontaneous adsorption of airborne hydrocarbons

    International Nuclear Information System (INIS)

    Liu, Peng; Cao, Ling; Zhao, Wei; Xia, Yue; Huang, Wei; Li, Zelin

    2015-01-01

    Graphical abstract: - Highlights: • Several superhydrophobic metallic surfaces were fabricated by fast electrodeposition. • Both micro/nanostructures and adsorption of airborne hydrocarbons make contributions. • XPS analyses confirm presence of airborne hydrocarbons on these metallic surfaces. • The adsorption of airborne hydrocarbons on the clean metal Au surface was very quick. • UV-O 3 treatment oxidized the hydrocarbons to hydrophilic oxygen-containing organics. - Abstract: Electrochemical fabrication of micro/nanostructured metallic surfaces with superhydrophobicity has recently aroused great attention. However, the origin still remains unclear why smooth hydrophilic metal surfaces become superhydrophobic by making micro/nanostructures without additional surface modifications. In this work, several superhydrophobic micro/nanostructured metal surfaces were prepared by a facile one-step electrodeposition process, including non-noble and noble metals such as copper, nickel, cadmium, zinc, gold, and palladium with (e.g. Cu) or without (e.g. Au) surface oxide films. We demonstrated by SEM and XPS that both hierarchical micro/nanostructures and spontaneous adsorption of airborne hydrocarbons endowed these surfaces with excellent superhydrophobicity. We revealed by XPS that the adsorption of airborne hydrocarbons at the Ar + -etched clean Au surface was rather quick, such that organic contamination can hardly be prevented in practical operation of surface wetting investigation. We also confirmed by XPS that ultraviolet-O 3 treatment of the superhydrophobic metal surfaces did not remove the adsorbed hydrocarbons completely, but mainly oxidized them into hydrophilic oxygen-containing organic substances. We hope our findings here shed new light on deeper understanding of superhydrophobicity for micro/nanostructured metal surfaces with and without surface oxide films

  9. Semiconductor plasmonic crystals : active control of THz extinction

    NARCIS (Netherlands)

    Schaafsma, M.C.; Gomez Rivas, J.

    2013-01-01

    We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are

  10. Preparation of triangular and hexagonal silver nanoplates on the surface of quartz substrate

    International Nuclear Information System (INIS)

    Jia Huiying; Zeng Jianbo; An Jing; Song Wei; Xu Weiqing; Zhao Bing

    2008-01-01

    In this paper, triangular and hexagonal silver nanoplates were prepared on the surface of quartz substrate using photoreduction of silver ions in the presence of silver seeds. The obtained silver nanoplates were characterized by atomic force microscopy and UV-vis spectroscopy. It was found that the silver seeds played an important role in the formation of triangular and hexagonal silver nanoplates. By varying the irradiation time, nanoplates with different sizes and shapes could be obtained. The growth mechanism for triangular and hexagonal nanoplates prepared on quartz substrate was discussed

  11. Surface preparation for high purity alumina ceramics enabling direct brazing in hydrogen atmospheres

    Science.gov (United States)

    Cadden, Charles H.; Yang, Nancy Yuan Chi; Hosking, Floyd M.

    2001-01-01

    The present invention relates to a method for preparing the surface of a high purity alumina ceramic or sapphire specimen that enables direct brazing in a hydrogen atmosphere using an active braze alloy. The present invention also relates to a method for directly brazing a high purity alumina ceramic or sapphire specimen to a ceramic or metal member using this method of surface preparation, and to articles produced by this brazing method. The presence of silicon, in the form of a SiO.sub.2 -containing surface layer, can more than double the tensile bond strength in alumina ceramic joints brazed in a hydrogen atmosphere using an active Au-16Ni-0.75 Mo-1.75V filler metal. A thin silicon coating applied by PVD processing can, after air firing, produce a semi-continuous coverage of the alumina surface with a SiO.sub.2 film. Room temperature tensile strength was found to be proportional to the fraction of air fired surface covered by silicon-containing films. Similarly, the ratio of substrate fracture versus interface separation was also related to the amount of surface silicon present prior to brazing. This process can replace the need to perform a "moly-manganese" metallization step.

  12. [Study on preparation and physicochemical properties of surface modified sintered bone].

    Science.gov (United States)

    Li, Jingfeng; Zheng, Qixin; Guo, Xiaodong

    2012-06-01

    The aim of this study is to investigate a new method for preparing a biomimetic bone material-surface modified sintered bovine cancellous bone, and to improve its bioactivity as a tissue engineering bone. The prepared sintered bovine cancellous bones with the same size were randomly divided into two groups, immersing in 1 and 1. 5 times simulated body fluid (SBF), respectively. The three time periods of soak time were 7, 14, and 21 days. After sintered bone was dried, the surface morphology of sintered bone and surface mineralization composition were observed under scanning electron microscopy (SEM). By comparing the effect of surface modification of sintered bone materials, we chose the most ideal material and studied its pore size, the rate of the porosity, the compress and bend intensity. And then the material and the sintered bone material without surface modification were compared. The study indicated that sintered bone material immersed in SBF (1.5 times) for 14 days showed the best effect of surface modification, retaining the original physico-chemical properties of sintered bone.

  13. Structures and electronics of buried and unburied semiconductor interfaces

    International Nuclear Information System (INIS)

    Kamiya, Itaru

    2011-01-01

    The structure of interfaces plays an important role in determining the electronic properties of semiconductor nanostructures. Here, such examples are shown and discussed using semiconductor nanostructures prepared by molecular beam epitaxy and colloidal synthesis.

  14. An investigation of the mass spectra of secondary ions ejected from the single crystal surface of semiconductors

    International Nuclear Information System (INIS)

    Koval', A.G.; Mel'nikov, V.N.; Enukov, Yu.V.

    1976-01-01

    The mass spectra of secondary positive and negative ions, ejected by an Ar + ion beam from the (100) face of an epitaxial film of the semiconductor Alsub(x)Gasub(1-x)As were investigated. There are many various secondary ions in the mass spectrum under investigation. They may be divided into four groups according to their origins. Mass spectra of secondary positive and negative secondary ions differ much, either in their composition or the intensities of homogeneous ions. The I(T) dependences (I=the current of corresponding secondary ions, T=target temperature) were obtained for secondary and negative ions taken from groups differing by their origin. The I(T) dependences were obtained at several oxygen pressures in a chamber. For the ions with 'superficial' origin a strong dependence of their current on target temperature is observed. Oxygen pressure increase leads to substantial change of the I(T)curves. (Auth.)

  15. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  16. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  17. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  18. Polystyrene/magnesium hydroxide nanocomposite particles prepared by surface-initiated in-situ polymerization

    International Nuclear Information System (INIS)

    Liu Hui; Yi Jianhong

    2009-01-01

    In order to avoid their agglomeration and incompatibility with hydrophobic polystyrene substrate, magnesium hydroxide nanoparticles were encapsulated by surface-initiated in-situ polymerization of styrene. The process contained two steps: electrostatic adsorption of initiator and polymerization of monomer on the surface of magnesium hydroxide. It was found that high adsorption ratio in the electrostatic adsorption of initiator could be attained only in acidic region, and the adsorption belonged to typical physical process. Compared to traditional in-situ polymerization, higher grafting ratio was obtained in surface-initiated in-situ polymerization, which can be attributed to weaker steric hindrance. Both Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM) indicated that polystyrene/magnesium hydroxide nanocomposite particles had been successfully prepared by surface-initiated in-situ polymerization. The resulting samples were also analyzed and characterized by means of contact angle testing, dispersibility evaluation and thermogravimetric analysis

  19. Investigation of Plasma Etching for Superconducting RF Cavities Surface Preparation. Final Report

    International Nuclear Information System (INIS)

    Vuskovic, Leposava

    2009-01-01

    Our results show that plasma-treated samples are comparable or superior to a BCP sample, both in the size of features and sharpness of the boundaries between individual features at the surface. Plasma treatment of bulk Nb cavities is a promising technique for microwave cavities preparation used in particle acceleration application. Etching rates are sufficiently high to enable efficient removal of mechanically damaged surface layer with high reproducibility. No impurities are deposited on the bulk Nb surface during plasma treatment. Surface topology characteristic are promising for complex cavity geometry, since discharge conforms the profile of the reaction chamber. In view of these experimental results, we propose plasma treatment for producing microwave cavities with high Q factor instead of using bulk Nb treated with wet etching process.

  20. Gold Nanostructures for Surface-Enhanced Raman Spectroscopy, Prepared by Electrodeposition in Porous Silicon

    Directory of Open Access Journals (Sweden)

    Yukio H. Ogata

    2011-04-01

    Full Text Available Electrodeposition of gold into porous silicon was investigated. In the present study, porous silicon with ~100 nm in pore diameter, so-called medium-sized pores, was used as template electrode for gold electrodeposition. The growth behavior of gold deposits was studied by scanning electron microscope observation of the gold deposited porous silicon. Gold nanorod arrays with different rod lengths were prepared, and their surface-enhanced Raman scattering properties were investigated. We found that the absorption peak due to the surface plasmon resonance can be tuned by changing the length of the nanorods. The optimum length of the gold nanorods was ~600 nm for surface-enhanced Raman spectroscopy using a He-Ne laser. The reason why the optimum length of the gold nanorods was 600 nm was discussed by considering the relationship between the absorption peak of surface plasmon resonance and the wavelength of the incident laser for Raman scattering.

  1. Use of computational modeling in preparation and evaluation of surface imprinted xerogels for binding tetracycline

    International Nuclear Information System (INIS)

    Pace, Samantha J.; Nguyen, Eric; Baria, Maximillian P.; Mojica, Elmer-Rico E.

    2015-01-01

    Linear alkyl alkoxysilanes (methoxy and ethoxy-based) of varying length were used in preparing tetracycline surface imprinted silica xerogels by the sol–gel process. The resulting xerogels were characterized in terms of binding tetracycline (TC) by using tritium-labeled TC. Results showed preferential binding in the ethoxysilane based xerogels in comparison to methoxysilane based xerogels. A computational approach using the interaction energy (IE) between TC and each alkyl alkoxysilane was deduced as a rational way of predicting the formulation that would provide the best analytical performance for a given molecularly imprinted xerogel (MIX). Hartree-Fock calculations revealed an increase in IE as the length of the carbon chain increases until an optimum value at C6 in both alkoxysilanes. This is consistent with the experimental results wherein the C6 xerogel formulation has the highest imprinting factor. These results show the potential of using computational modeling as a rational way of preparing surface imprinted materials. (author)

  2. Influence of the mode of preparation of the UO3 trioxide on its specific surface

    International Nuclear Information System (INIS)

    Sauteron, J.

    1960-01-01

    As the specific surface of uranium trioxide UO 3 closely depends on the preparation mode and conditions, the authors report and discuss several results obtained on uranium trioxides produced either by precipitation of uranyl nitrate (with oxygenated water, liquid or gaseous ammoniac, and ammonium carbonate), then by calcination at 350 C, or by thermal decomposition of the uranyl nitrate. The authors also studied the influence of calcination temperature of ammonium uranate on the specific surface of the obtained oxide (between 200 and 900 deg.) [fr

  3. Processing surface sizing starch using oxidation, enzymatic hydrolysis and ultrasonic treatment methods--Preparation and application.

    Science.gov (United States)

    Brenner, Tobias; Kiessler, Birgit; Radosta, Sylvia; Arndt, Tiemo

    2016-03-15

    The surface application of starch is a well-established method for increasing paper strength. In surface sizing, a solution of degraded starch is applied to the paper. Two procedures have proved valuable for starch degradation in the paper mill: enzymatic and thermo-oxidative degradation. The objective of this study was to determine achievable efficiencies of cavitation in preparing degraded starch for surface application on paper. It was found that ultrasonic-assisted starch degradation can provide a starch solution that is suitable for surface sizing. The molecular composition of starch solutions prepared by ultrasonic treatment differed from that of starch solutions degraded by enzymes or by thermo-oxidation. Compared to commercial degradation processes, this resulted in intensified film formation and in greater penetration during surface sizing and ultimately in a higher starch content of the paper. Paper sized with ultrasonically treated starch solutions show the same strength properties compared to commercially sized paper. Copyright © 2015 Elsevier Ltd. All rights reserved.

  4. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  5. Method of manufacturing a semiconductor sensor device and semiconductor sensor device

    NARCIS (Netherlands)

    2009-01-01

    The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

  6. The effect of surface preparation on the behaviour of double strap adhesive joints with thick steel adherents

    DEFF Research Database (Denmark)

    Anyfantis, K.N.; Tsouvalis, N.G.

    2009-01-01

    for preparing the bonding surfaces are investigated, namely grit blasting (GB) and simple sandpaper (SP). The behaviour of the joints, in terms of the force-displacement and strains-displacement responses was monitored and compared for both cases. The joints with SP surface preparation exhibited slightly lower...... stiffness and lower strength than the joints with GB surface preparation, while the latter failed at a lower displacement. In both cases, failure initiated at the free edges of the joints and the dominating failure mode was interfacial. In addition to the above experimental measurements, results are also......One of the major factors determining the integrity of an adhesive bond is the preparation of the bonding surfaces. The present study is an experimental investigation of the effect of the surface preparation procedure on the response of a steel-to-steel double strap adhesive joint. Two procedures...

  7. Direct investigation of (sub-) surface preparation artifacts in GaAs based materials by FIB sectioning

    Energy Technology Data Exchange (ETDEWEB)

    Belz, Jürgen; Beyer, Andreas; Torunski, Torsten; Stolz, Wolfgang; Volz, Kerstin

    2016-04-15

    The introduction of preparation artifacts is almost inevitable when producing samples for (scanning) transmission electron microscopy ((S)TEM). These artifacts can be divided in extrinsic artifacts like damage processes and intrinsic artifacts caused by the deviations from the volume strain state in thin elastically strained material systems. The reduction and estimation of those effects is of great importance for the quantitative analysis of (S)TEM images. Thus, optimized ion beam preparation conditions are investigated for high quality samples. Therefore, the surface topology is investigated directly with atomic force microscopy (AFM) on the actual TEM samples. Additionally, the sectioning of those samples by a focused ion beam (FIB) is used to investigate the damage depth profile directly in the TEM. The AFM measurements show good quantitative agreement of sample height modulation due to strain relaxation to finite elements simulations. Strong indications of (sub-) surface damage by ion beams are observed. Their influence on high angle annular dark field (HAADF) imaging is estimated with focus on thickness determination by absolute intensity methods. Data consolidation of AFM and TEM measurements reveals a 3.5 nm surface amorphization, negligible surface roughness on the scale of angstroms and a sub-surface damage profile in the range of up to 8.0 nm in crystalline gallium arsenide (GaAs) and GaAs-based ternary alloys. A correction scheme for thickness evaluation of absolute HAADF intensities is proposed and applied for GaAs based materials. - Highlights: • The damage by Ar-ion milling during TEM sample preparation is investigated directly. • After FIB sectioning damage and deep disorder of c-GaAs is seen in cross-section. • The influence of such disorder on conventional ADF measurements is estimated. • A correction for HAADF measurements is proposed with focus on thickness estimations.

  8. Low thermal budget surface preparation of Si and SiGe

    International Nuclear Information System (INIS)

    Abbadie, A.; Hartmann, J.M.; Holliger, P.; Semeria, M.N.; Besson, P.; Gentile, P.

    2004-01-01

    Using a two-step cleaning, we have investigated the low thermal budget surface preparation of Si and Si 1-x Ge x (x=0.2-0.33). It consists of an ex situ 'HF-last' wet-cleaning and an in situ low thermal budget H 2 bake in a reduced pressure-chemical vapor deposition reactor. Using secondary ion mass spectrometry, we have evaluated the effects of different H 2 bake temperatures (in between 750 and 850 deg. C for 2 min) on the removal efficiency of C, O and F atoms still present on the surface of Si and SiGe virtual substrates after the 'HF-last' wet-cleaning. We have then examined the impact of the (wet-cleaning+H 2 bake) combination on the surface cross-hatch of SiGe as-grown virtual substrates, focusing on the analysis, notably by atomic force microscopy, of the surface topography before and after the miscellaneous thermal treatments. In situ hydrogen baking steps in between 775 and 850 deg. C do not modify the surface morphology and roughness. An easy and rapid optical characterization method, i.e. the optical interferometry, is presented as well to monitor in line the morphological changes induced by such processing steps as chemical mechanical polishing, wet-cleaning, H 2 bake, etc. Despite the lower resolution of the optical profilometer, the surface roughness values coming from it have been correctly correlated with those obtained from AFM. An optimized 'HF-last' wet-cleaning using a diluted chemistry in conjunction with a H 2 bake at 800 deg. C for 2 min (775 deg. C, 2') is a good compromise for SiGe (Si) surface preparation

  9. Optimized preparation for large surface area activated carbon from date (Phoenix dactylifera L.) stone biomass

    International Nuclear Information System (INIS)

    Danish, Mohammed; Hashim, Rokiah; Ibrahim, M.N. Mohamad; Sulaiman, Othman

    2014-01-01

    The preparation of activated carbon from date stone treated with phosphoric acid was optimized using rotatable central composite design of response surface methodology (RSM). The chemical activating agent concentration and temperature of activation plays a crucial role in preparation of large surface area activated carbons. The optimized activated carbon was characterized using thermogravimetric analysis, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, powder X-ray diffraction, and Fourier transform infrared spectroscopy. The results showed that the larger surface area of activated carbon from date stone can be achieved under optimum activating agent (phosphoric acid) concentration, 50.0% (8.674 mol L −1 ) and activation temperature, 900 °C. The Brunauer–Emmett–Teller (BET) surface area of optimized activated carbon was found to be 1225 m 2  g −1 , and thermogravimetric analysis revealed that 55.2% mass of optimized activated carbon was found thermally stable till 900 °C. The leading chemical functional groups found in the date stone activated carbon were aliphatic carboxylic acid salt ν(C=O) 1561.22 cm −1 and 1384.52 cm −1 , aliphatic hydrocarbons ν(C–H) 2922.99 cm −1 (C–H sym./asym. stretch frequency), aliphatic phosphates ν(P–O–C) 1054.09 cm −1 , and secondary aliphatic alcohols ν(O–H) 3419.81 cm −1 and 1159.83 cm −1 . - Highlights: • RSM optimization was done for the production of large surface area activated carbon. • Two independent variables with two responses were selected for optimization. • Characterization was done for surface area, morphology and chemical constituents. • Optimized date stone activated carbon achieved surface area 1225 m 2  g −1

  10. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  11. Lowering the environmental impact of high-kappa/ metal gate stack surface preparation processes

    Science.gov (United States)

    Zamani, Davoud

    ABSTRACT Hafnium based oxides and silicates are promising high-κ dielectrics to replace SiO2 as gate material for state-of-the-art semiconductor devices. However, integrating these new high-κ materials into the existing complementary metal-oxide semiconductor (CMOS) process remains a challenge. One particular area of concern is the use of large amounts of HF during wet etching of hafnium based oxides and silicates. The patterning of thin films of these materials is accomplished by wet etching in HF solutions. The use of HF allows dissolution of hafnium as an anionic fluoride complex. Etch selectivity with respect to SiO2 is achieved by appropriately diluting the solutions and using slightly elevated temperatures. From an ESH point of view, it would be beneficial to develop methods which would lower the use of HF. The first objective of this study is to find new chemistries and developments of new wet etch methods to reduce fluoride consumption during wet etching of hafnium based high-κ materials. Another related issue with major environmental impact is the usage of large amounts of rinsing water for removal of HF in post-etch cleaning step. Both of these require a better understanding of the HF interaction with the high-κ surface during the etching, cleaning, and rinsing processes. During the rinse, the cleaning chemical is removed from the wafers. Ensuring optimal resource usage and cycle time during the rinse requires a sound understanding and quantitative description of the transport effects that dominate the removal rate of the cleaning chemicals from the surfaces. Multiple processes, such as desorption and re-adsorption, diffusion, migration and convection, all factor into the removal rate of the cleaning chemical during the rinse. Any of these processes can be the removal rate limiting process, the bottleneck of the rinse. In fact, the process limiting the removal rate generally changes as the rinse progresses, offering the opportunity to save resources

  12. Preparation of Trivalent Chromium and Rare Earth Composite Conversion Coating on Aluminum Alloy Surface

    Science.gov (United States)

    Huang, Jianzhen

    2018-01-01

    In this paper, the surface conversion film on 6063 aluminum alloy was prepared by chemical plating process with chromium sulfate, lanthanum sulfate and sodium phosphate as film forming agent. The corrosion resistance and surface morphology of the conversion film were analyzed by pitting corrosion test of copper sulfate and SEM. The results show that when Cr2(SO4)3 is 10 g/L, La2(SO4)3 is 2 g/L, Na3PO4 is 8 g/L, pH value is 3, temperature is 40 °C, reaction time is 10 min, the corrosion resistance of the surface conversion film is the best. The conversion coating is light green, composed of Cr, La, P, Al, O and other elements.

  13. Laser-based surface preparation of composite laminates leads to improved electrodes for electrical measurements

    KAUST Repository

    Almuhammadi, Khaled; Selvakumaran, Lakshmi; Alfano, Marco; Yang, Yang; Bera, Tushar Kanti; Lubineau, Gilles

    2015-01-01

    Electrical impedance tomography (EIT) is a low-cost, fast and effective structural health monitoring technique that can be used on carbon fiber reinforced polymers (CFRP). Electrodes are a key component of any EIT system and as such they should feature low resistivity as well as high robustness and reproducibility. Surface preparation is required prior to bonding of electrodes. Currently this task is mostly carried out by traditional sanding. However this is a time consuming procedure which can also induce damage to surface fibers and lead to spurious electrode properties. Here we propose an alternative processing technique based on the use of pulsed laser irradiation. The processing parameters that result in selective removal of the electrically insulating resin with minimum surface fiber damage are identified. A quantitative analysis of the electrical contact resistance is presented and the results are compared with those obtained using sanding.

  14. Preparation of self-cleaning surfaces with a dual functionality of superhydrophobicity and photocatalytic activity

    Science.gov (United States)

    Park, Eun Ji; Yoon, Hye Soo; Kim, Dae Han; Kim, Yong Ho; Kim, Young Dok

    2014-11-01

    Thin film of polydimethylsiloxane (PDMS) was deposited on SiO2 nanoparticles by chemical vapor deposition, and SiO2 became completely hydrophobic after PDMS coating. Mixtures of TiO2 and PDMS-coated SiO2 nanoparticles with various relative ratios were prepared, and distributed on glass surfaces, and water contact angles and photocatalytic activities of these surfaces were studied. Samples consisting of TiO2 and PDMS-coated SiO2 with a ratio of 7:3 showed a highly stable superhydrophobicity under UV irradiation with a water contact angle of 165° and UV-driven photocatalytic activity for decomposition of methylene blue and phenol in aqueous solution. Our process can be exploited for fabricating self-cleaning surfaces with dual functionality of superhydrophobicity and photocatalytic activity at the same time.

  15. Laser-based surface preparation of composite laminates leads to improved electrodes for electrical measurements

    KAUST Repository

    Almuhammadi, Khaled

    2015-10-19

    Electrical impedance tomography (EIT) is a low-cost, fast and effective structural health monitoring technique that can be used on carbon fiber reinforced polymers (CFRP). Electrodes are a key component of any EIT system and as such they should feature low resistivity as well as high robustness and reproducibility. Surface preparation is required prior to bonding of electrodes. Currently this task is mostly carried out by traditional sanding. However this is a time consuming procedure which can also induce damage to surface fibers and lead to spurious electrode properties. Here we propose an alternative processing technique based on the use of pulsed laser irradiation. The processing parameters that result in selective removal of the electrically insulating resin with minimum surface fiber damage are identified. A quantitative analysis of the electrical contact resistance is presented and the results are compared with those obtained using sanding.

  16. Surface and Adsorption Properties of Activated Carbon Fabric Prepared from Cellulosic Polymer: Mixed Activation Method

    Energy Technology Data Exchange (ETDEWEB)

    Bhati, Surendra; Mahur, J. S.; Choubey, O. N. [Barkatullah Univ., Bhopal (India); Dixit, Mahur Savita [Maulana Azad National Institute of Technology, Bhopla (India)

    2013-02-15

    In this study, activated carbon fabric was prepared from a cellulose-based polymer (viscose rayon) via a combination of physical and chemical activation (mixed activation) processes by means of CO{sub 2} as a gasifying agent and surface and adsorption properties were evaluated. Experiments were performed to investigate the consequence of activation temperature (750, 800, 850 and 925 .deg. C), activation time (15, 30, 45 and 60 minutes) and CO{sub 2} flow rate (100, 200, 300 and 400 mL/min) on the surface and adsorption properties of ACF. The nitrogen adsorption isotherm at 77 K was measured and used for the determination of surface area, total pore volume, micropore volume, mesopore volume and pore size distribution using BET, t-plot, DR, BJH and DFT methods, respectively. It was observed that BET surface area and TPV increase with rising activation temperature and time due to the formation of new pores and the alteration of micropores into mesopores. It was also found that activation temperature dominantly affects the surface properties of ACF. The adsorption of iodine and CCl{sub 4} onto ACF was investigated and both were found to correlate with surface area.

  17. Surface and Adsorption Properties of Activated Carbon Fabric Prepared from Cellulosic Polymer: Mixed Activation Method

    International Nuclear Information System (INIS)

    Bhati, Surendra; Mahur, J. S.; Choubey, O. N.; Dixit, Mahur Savita

    2013-01-01

    In this study, activated carbon fabric was prepared from a cellulose-based polymer (viscose rayon) via a combination of physical and chemical activation (mixed activation) processes by means of CO 2 as a gasifying agent and surface and adsorption properties were evaluated. Experiments were performed to investigate the consequence of activation temperature (750, 800, 850 and 925 .deg. C), activation time (15, 30, 45 and 60 minutes) and CO 2 flow rate (100, 200, 300 and 400 mL/min) on the surface and adsorption properties of ACF. The nitrogen adsorption isotherm at 77 K was measured and used for the determination of surface area, total pore volume, micropore volume, mesopore volume and pore size distribution using BET, t-plot, DR, BJH and DFT methods, respectively. It was observed that BET surface area and TPV increase with rising activation temperature and time due to the formation of new pores and the alteration of micropores into mesopores. It was also found that activation temperature dominantly affects the surface properties of ACF. The adsorption of iodine and CCl 4 onto ACF was investigated and both were found to correlate with surface area

  18. Hybrid anode for semiconductor radiation detectors

    Science.gov (United States)

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  19. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  20. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  1. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  2. Electronic energy transfer from molecules to metal and semiconductor surfaces, and chemisorption-induced changes in optical response of the nickel (111) surface

    International Nuclear Information System (INIS)

    Whitmore, P.M.

    1982-10-01

    The evolution of molecular excited states near solid surfaces is investigated. The mechanisms through which energy is transferred to the surface are described within a classical image dipole picture of the interaction. More sophisticated models for the dielectric response of the solid surface add important new decay channels for the energy dissipation. The predictions and applicability of three of these refined theories are discussed

  3. Preparation of Nano Activated γ-Alumina ( with Surfactant and Surface Characterization

    Directory of Open Access Journals (Sweden)

    Enas Sameer AL-Khawaja

    2016-09-01

    Full Text Available This paper deals with the preparation of Alumina by sol-gel technique through the hydrolysis of aluminum ion mixed with the glucose as a surfactant and converting it to gel by ammonium hydroxide in aqueous media. The resulting sol composed of particle is draying to become a transparent gel. The freshly prepared gel is heated at 700°C for 2hrs to obtain alumina ( particles. The obtained particles are found to be γ-alumina particles with high porosity, Their characteristics are determined by LPSA, XRD, SEM, TEM and BET techniques. The results show that the particles are pure alumina, nano-sized=20nm, spherical shape, high surface area=210 /gm.

  4. Preparation and surface encapsulation of hollow TiO nanoparticles for electrophoretic displays

    International Nuclear Information System (INIS)

    Zhao Qian; Tan Tingfeng; Qi Peng; Wang Shirong; Bian Shuguang; Li Xianggao; An Yong; Liu Zhaojun

    2011-01-01

    Hollow black TiO nanosparticles were obtained via deposition of inorganic coating on the surface of hollow core-shell polymer latex with Ti(OBu) 4 as precursor and subsequent calcination in ammonia gas. Hollow TiO particles were characterized by scanning electron microscope, transmission electronic microscopy, X-ray diffraction, and thermogravimetric analysis. Encapsulation of TiO via dispersion polymerization was promoved by pretreating the pigments with 3-(trimethoxysilyl) propyl methacrylate, making it possible to prepare hollow TiO-polymer particles. When St and DVB were used as polymerization monomer, hollow TiO-polymer core-shell particles came into being via dispersion polymerization, and the lipophilic degree is 28.57%. Glutin-arabic gum microcapsules containing TiO-polymer particles electrophoretic liquid were prepared using via complex coacervation. It was founded that hollow TiO-polymer particles had enough electrophoretic mobility after coating with polymer.

  5. Preparation of miniantibodies to Azospirillum brasilense Sp245 surface antigens and their use for bacterial detection.

    Science.gov (United States)

    Dykman, Lev A; Staroverov, Sergei A; Guliy, Olga I; Ignatov, Oleg V; Fomin, Alexander S; Vidyasheva, Irina V; Karavaeva, Olga A; Bunin, Viktor D; Burygin, Gennady L

    2012-01-01

    This article reports the first preparation of miniantibodies to Azospirillum brasilense Sp245 surface antigens by using a combinatorial phage library of sheep antibodies. The prepared phage antibodies were used for the first time for lipopolysaccharide and flagellin detection by dot assay, electro-optical analysis of cell suspensions, and transmission electron microscopy. Interaction of A. brasilense Sp245 with antilipopolysaccharide and antiflagellin phage-displayed miniantibodies caused the magnitude of the electro-optical signal to change considerably. The electro-optical results were in good agreement with the electron microscopic data. This is the first reported possibility of employing phage-displayed miniantibodies in bacterial detection aided by electro-optical analysis of cell suspensions.

  6. Efficient Preparation of Super Antifouling PVDF Ultrafiltration Membrane with One Step Fabricated Zwitterionic Surface.

    Science.gov (United States)

    Zhao, Xinzhen; He, Chunju

    2015-08-19

    On the basis of the excellent fouling resistance of zwitterionic materials, the super antifouling polyvinylidene fluoride (PVDF) membrane was efficiently prepared though one-step sulfonation of PVDF and polyaniline blend membrane in situ. The self-doped sulfonated polyaniline (SPANI) was generated as a novel zwitterionic polymer to improve the antifouling property of PVDF ultrafiltration membrane used in sewage treatment. Surface attenuated total reflection Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, surface zeta potential, and water contact angle demonstrated the successful fabrication of zwitterionic interface by convenient sulfonation modification. The static adsorption fouling test showed the quantified adsorption mass of bovine serum albumin (BSA) pollutant on the PVDF/SPANI membrane surface decreases to 3(±2) μg/cm(2), and the water flux recovery ratio (FRR) values were no less than 95% for the three model pollutants of BSA, sodium alginate (SA), and humic acid (HA), which were corresponding hydrophobic, hydrophilic, and natural pollutants in sewage, respectively. This Research Article demonstrated the antifouling advantages of zwitterionic SPANI and aimed to provide a simple method for the large scale preparation of zwitterionic antifouling ultrafiltration membranes.

  7. Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

    Science.gov (United States)

    Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

    2017-12-01

    III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

  8. Effect of thermal treatment on the density of radiation-induced defects in dielectrics and on the semiconductor surface of silicon MDS structures

    International Nuclear Information System (INIS)

    Daliev, Kh.S.; Lebedev, A.A.; Ehkke, V.; 3425000DD)

    1987-01-01

    Isochronous annealing of radiation defects formed under MIS structure irradiation by γ-quanta at the presence of shift stress on a metal electrode is studied. Complex measurements of non-stationary capacitance spectroscopy and volt-farad characteristics (VFC) have shown that a built-in charge and volumetric states (VS) of the dielectric are annealed at 250 deg C, fast surface states (SS) - at 350 deg C, and the characteristic radiation defect in the Si-SiO 2 transition layer is completely annealed only at 400 deg C. Additional VS and SS occurring in the structures at positive shift on the metal electrode under radiation are annealed at 120 deg C, the kinetics of defect annealing at higher temperatures is independent from shift polarity. SS density calculated by VFC is determined in reality by recharging not only SS but some VS of the dielectric in the range of width of the order of 3.5 nm from the surface of the semiconductor

  9. Rupture preparation process controlled by surface roughness on meter-scale laboratory fault

    Science.gov (United States)

    Yamashita, Futoshi; Fukuyama, Eiichi; Xu, Shiqing; Mizoguchi, Kazuo; Kawakata, Hironori; Takizawa, Shigeru

    2018-05-01

    We investigate the effect of fault surface roughness on rupture preparation characteristics using meter-scale metagabbro specimens. We repeatedly conducted the experiments with the same pair of rock specimens to make the fault surface rough. We obtained three experimental results under the same experimental conditions (6.7 MPa of normal stress and 0.01 mm/s of loading rate) but at different roughness conditions (smooth, moderately roughened, and heavily roughened). During each experiment, we observed many stick-slip events preceded by precursory slow slip. We investigated when and where slow slip initiated by using the strain gauge data processed by the Kalman filter algorithm. The observed rupture preparation processes on the smooth fault (i.e. the first experiment among the three) showed high repeatability of the spatiotemporal distributions of slow slip initiation. Local stress measurements revealed that slow slip initiated around the region where the ratio of shear to normal stress (τ/σ) was the highest as expected from finite element method (FEM) modeling. However, the exact location of slow slip initiation was where τ/σ became locally minimum, probably due to the frictional heterogeneity. In the experiment on the moderately roughened fault, some irregular events were observed, though the basic characteristics of other regular events were similar to those on the smooth fault. Local stress data revealed that the spatiotemporal characteristics of slow slip initiation and the resulting τ/σ drop for irregular events were different from those for regular ones even under similar stress conditions. On the heavily roughened fault, the location of slow slip initiation was not consistent with τ/σ anymore because of the highly heterogeneous static friction on the fault, which also decreased the repeatability of spatiotemporal distributions of slow slip initiation. These results suggest that fault surface roughness strongly controls the rupture preparation process

  10. ATP bioluminescence: Surface hygiene monitoring in milk preparation room of neonatal intensive care unit

    Science.gov (United States)

    Mohamad, Mahirah; Ishak, Shareena; Jaafar, Rohana; Sani, Norrakiah Abdullah

    2018-04-01

    ATP Bioluminescence application and standard microbiological analyses were used to evaluate the cleanliness of milk contact surfaces and non-milk contact surfaces in milk preparation room of neonatal intensive care unit (NICU) of Universiti Kebangsaan Malaysia Medical Centre (UKMMC). A total of 44 samples including the breast pump, milk bottle, milk bottle screw top and screw ring, teats, measuring cups, waterless warmer, refrigerator, dishwasher and pasteurizer inner wall were tested on May 2017. 3M Clean and Trace Hygiene Monitoring (UXL100 ATP Test swabs) and the bioluminescence reader Clean-Trace NG Luminometer (3M) were used to measure the Relative Light Unit (RLU) and microbiological analysis using 3M Quick Swab and 3MTM PetrifilmTM for enumeration of aerobic count, Staphylococcus aureus, Enterobacteriaceae, coliform and detection of Escherichia coli (CFU /100cm2 or utensil/item). The RLU values were from 11 to 194 and passed the ATP benchmark for intensive care unit (ICU), < 250 RLU as recommended. Aerobic colony count was only found in waterless warmer (0.05±0.01 mean log CFU/warmer). None of S. aureus, Enterobacteriaceae, E. coli and coliform was detected in all samples. A weak correlation was found between bioluminescence measurements RLU and the microbiological analysis (CFU). However, the use of ATP bioluminescence in monitoring milk preparation room cleanliness can be a useful method for assessing rapidly the surface hygiene as well as to verify the Sanitation Standard Operating Procedure (SSOP) prior to implementation of Hazard Analysis and Critical Control Points (HACCP) in milk preparation room.

  11. Microleakage in conservative cavities varying the preparation method and surface treatment

    Directory of Open Access Journals (Sweden)

    Juliana Abdallah Atoui

    2010-08-01

    Full Text Available OBJECTIVE: To assess microleakage in conservative class V cavities prepared with aluminum-oxide air abrasion or turbine and restored with self-etching or etch-and-rinse adhesive systems. Materials and Methods: Forty premolars were randomly assigned to 4 groups (I and II: air abrasion; III and IV: turbine and class V cavities were prepared on the buccal surfaces. Conditioning approaches were: groups I/III - 37% phosphoric acid; groups II/IV - self-priming etchant (Tyrian-SPE. Cavities were restored with One Step Plus/Filtek Z250. After finishing, specimens were thermocycled, immersed in 50% silver nitrate, and serially sectioned. Microleakage at the occlusal and cervical interfaces was measured in mm and calculated by a software. Data were subjected to ANOVA and Tukey's test (α=0.05. RESULTS: Marginal seal provided by air abrasion was similar to high-speed handpiece, except for group I. There was SIGNIFICANT difference between enamel and dentin/cementum margins for to group I and II: air abrasion. The etch-and-rinse adhesive system promoted a better marginal seal. At enamel and dentin/cementum margins, the highest microleakage values were found in cavities treated with the self-etching adhesive system. At dentin/cementum margins, high-speed handpiece preparations associated with etch-and-rinse system provided the least dye penetration. CONCLUSION: Marginal seal of cavities prepared with aluminum-oxide air abrasion was different from that of conventionally prepared cavities, and the etch-and-rinse system promoted higher marginal seal at both enamel and dentin margins.

  12. Search for a metallic dangling-bond wire on n-doped H-passivated semiconductor surfaces

    DEFF Research Database (Denmark)

    Engelund, Mads; Papior, Nick Rübner; Brandimarte, Pedro

    2016-01-01

    We have theoretically investigated the electronic properties of neutral and n-doped dangling bond (DB) quasi-one-dimensional structures (lines) in the Si(001):H and Ge(001):H substrates with the aim of identifying atomic-scale interconnects exhibiting metallic conduction for use in on-surface cir...

  13. Near-infrared light emitting device using semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon; Correa, Raoul Emile; Shirasaki, Yasuhiro; Bawendi, Moungi G.; Bulovic, Vladimir; Scherer, Jennifer

    2018-04-03

    A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

  14. Textured surface structures formed using new techniques on transparent conducting Al-doped zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Miyata, Toshihiro; Uozaki, Ryousuke; Sai, Hitoshi; Koida, Takashi

    2016-01-01

    Surface-textured Al-doped ZnO (AZO) films formed using two new techniques based on magnetron sputtering deposition were developed by optimizing the light scattering properties to be suitable for transparent electrode applications in thin-film silicon solar cells. Scrambled egg-like surface-textured AZO films were prepared using a new texture formation technique that post-etched pyramidal surface-textured AZO films prepared under deposition conditions suppressing c-axis orientation. In addition, double surface-textured AZO films were prepared using another new texture formation technique that completely removed, by post-etching, the pyramidal surface-textured AZO films previously prepared onto the initially deposited low resistivity AZO films; simultaneously, the surface of the low resistivity films was slightly etched. However, the obtained very high haze value in the range from the near ultraviolet to visible light in the scrambled egg-like surface-textured AZO films did not contribute significantly to the obtainable photovoltaic properties in the solar cells fabricated using the films. Significant light scattering properties as well as a low sheet resistance could be achieved in the double surface-textured AZO films. In addition, a significant improvement of external quantum efficiency in the range from the near ultraviolet to visible light was achieved in superstrate-type n-i-p μc-Si:H solar cells fabricated using a double surface-textured AZO film prepared under optimized conditions as the transparent electrode. - Highlights: • Double surface-textured AZO films prepared using a new texture formation technique • Extensive light scattering properties with low sheet resistance achieved in the double surface-textured AZO films • Improved external quantum efficiency of μc-Si:H solar cells using a double surface-textured AZO film

  15. Textured surface structures formed using new techniques on transparent conducting Al-doped zinc oxide films prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Miyata, Toshihiro, E-mail: tmiyata@neptune.kanazawa-it.ac.jp [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Uozaki, Ryousuke [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Sai, Hitoshi; Koida, Takashi [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

    2016-09-01

    Surface-textured Al-doped ZnO (AZO) films formed using two new techniques based on magnetron sputtering deposition were developed by optimizing the light scattering properties to be suitable for transparent electrode applications in thin-film silicon solar cells. Scrambled egg-like surface-textured AZO films were prepared using a new texture formation technique that post-etched pyramidal surface-textured AZO films prepared under deposition conditions suppressing c-axis orientation. In addition, double surface-textured AZO films were prepared using another new texture formation technique that completely removed, by post-etching, the pyramidal surface-textured AZO films previously prepared onto the initially deposited low resistivity AZO films; simultaneously, the surface of the low resistivity films was slightly etched. However, the obtained very high haze value in the range from the near ultraviolet to visible light in the scrambled egg-like surface-textured AZO films did not contribute significantly to the obtainable photovoltaic properties in the solar cells fabricated using the films. Significant light scattering properties as well as a low sheet resistance could be achieved in the double surface-textured AZO films. In addition, a significant improvement of external quantum efficiency in the range from the near ultraviolet to visible light was achieved in superstrate-type n-i-p μc-Si:H solar cells fabricated using a double surface-textured AZO film prepared under optimized conditions as the transparent electrode. - Highlights: • Double surface-textured AZO films prepared using a new texture formation technique • Extensive light scattering properties with low sheet resistance achieved in the double surface-textured AZO films • Improved external quantum efficiency of μc-Si:H solar cells using a double surface-textured AZO film.

  16. The Effect of Nylon and Polyester Peel Ply Surface Preparation on the Bond Quality of Composite Laminates

    Science.gov (United States)

    Moench, Molly K.

    The preparation of the surfaces to be bonded is critical to the success of composite bonds. Peel ply surface preparation is attractive from a manufacturing and quality assurance standpoint, but is a well known example of the extremely system-specific nature of composite bonds. This study examined the role of the surface energy, morphology, and chemistry left by peel ply removal in resulting bond quality. It also evaluated the use of contact angle surface energy measurement techniques for predicting the resulting bond quality of a prepared surface. The surfaces created by preparing three aerospace fiber-reinforced composite prepregs were compared when prepared with a nylon vs a polyester peel ply. The prepared surfaces were characterized with contact angle measurements with multiple fluids, scanning electron microscopy (SEM), and x-ray electron spectroscopy. The laminates were bonded with aerospace grade film adhesives. Bond quality was assessed via double cantilever beam testing followed by optical and scanning electron microscopy of the fracture surfaces.The division was clear between strong bonds (GIC of 600- 1000J/m2 and failure in cohesion) and weak bonds (GIC of 80-400J/m2 and failure in adhesion). All prepared laminates showed the imprint of the peel ply texture and evidence of peel ply remnants after fabric removal, either through SEM or XPS. Within an adhesive system, large amounts of SEM-visible peel ply material transfer correlated with poor bond quality and cleaner surfaces with higher bond quality. The both sides of failed weak bonds showed evidence of peel ply remnants under XPS, showing that at least some failure is occurring through the remnants. The choice of adhesive was found to be significant. AF 555 adhesive was more tolerant of peel ply contamination than MB 1515-3. Although the bond quality results varied substantially between tested combinations, the total surface energies of all prepared surfaces were very similar. Single fluid contact angle

  17. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  18. Surface resistances of 5-cm-diameter YBCO films prepared by MOD for microwave applications

    International Nuclear Information System (INIS)

    Manabe, T.; Sohma, M.; Yamaguchi, I.; Tsukada, K.; Kondo, W.; Kamiya, K.; Tsuchiya, T.; Mizuta, S.; Kumagai, T.

    2006-01-01

    Large-area high-T c superconducting films with low surface resistances R s are required for use in microwave applications such as band pass filters. In this paper, preparation of 5-cm-diameter YBCO films on LaAlO 3 (LAO) and CeO 2 -buffered sapphire (CbS) substrates by metalorganic deposition (MOD) using a fluorine-free coating solution and their superconducting properties are described. The optimum firing conditions for YBCO films greatly depend on the substrate materials; a heating rate at ramp as high as 200 deg. C /min is necessary for films on LAO whereas a lower heating rate, e.g., 20 deg. C /min, is required for films on CbS. Accordingly, the suitable furnace systems for these substrates have been varied. As a result, a YBCO film with high J c (77 K) of 2.7 MA/cm 2 and a low R s (12 GHz, 77 K) of 0.54 mΩ was prepared on LAO by using an infrared image furnace. On the other hand, a YBCO film with a higher J c (77 K) of 4.0 MA/cm 2 and the same R s (12 GHz, 77 K) of 0.54 mΩ was prepared on CbS by using a tube furnace

  19. The preparation of polypyrrole surfaces in the presence of mesoporous silica nanoparticles and their biomedical applications

    Science.gov (United States)

    Cho, Youngnam; Ben Borgens, Richard

    2010-05-01

    The deposition of carboxylic acid-terminated conducting polymer into two- or three-dimensional structures made up of colloidal particles has been successfully completed. This was accomplished using electrochemical deposition of ordered arrays of mesoporous silica nanoparticles (MSNs) as a template. Subsequent removal of the template yielded a porous polypyrrole surface. The co-polymerization of pyrrole with carboxylic acid-terminated pyrrole derivatives overcame the limitations of a lack of reactive functional groups—by facilitating the direct coupling of the film with biomolecules or drugs on the surface. Such Ppy films were characterized by several techniques: (1) scanning electron microscope (SEM) to evaluate surface topography, (2) x-ray photoelectron spectroscopy (XPS) to assess the chemical composition of the films, (3) four-point probe to measure the conductivity, and cyclic voltammogram to observe surface electroactivity. To assay the biological effectiveness of this preparation, we used phase-contrast light microscopy to compare neurite outgrowth from PC 12 cells grown on Ppy films in the presence and absence of electrical stimulation. These electrically functional, biocompatible composites show promise as novel neural implants that would deliver specific biologically active molecules in a highly localized manner to damaged or otherwise vulnerable cells such as found in the nervous system.

  20. Preparation and recognition of surface molecularly imprinted core-shell microbeads for protein in aqueous solutions

    International Nuclear Information System (INIS)

    Lu Yan; Yan Changling; Gao Shuyan

    2009-01-01

    In this paper, a surface molecular imprinting technique was reported for preparing core-shell microbeads of protein imprinting, and bovine hemoglobin or bovine serum albumin were used as model proteins for studying the imprinted core-shell microbeads. 3-Aminophenylboronic acid (APBA) was polymerized onto the surface of polystyrene microbead in the presence of the protein templates to create protein-imprinted core-shell microbeads. The various samples were characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Brunauer-Emmett-Teller (BET) methods. The effect of pH on rebinding of the template hemoglobin, the specific binding and selective recognition were studied for the imprinted microbeads. The results show that the bovine hemoglobin-imprinted core-shell microbeads were successfully created. The shell was a sort of imprinted thin films with porous structure and larger surface areas. The imprinted microbeads have good selectivity for templates and high stability. Due to the recognition sites locating at or closing to the surface, these imprinted microbeads have good property of mass-transport. Unfortunately, the imprint technology was not successfully applied to imprinting bovine serum albumin (BSA).

  1. Structure and composition of chemically prepared and vacuum annealed InSb(0 0 1) surfaces

    International Nuclear Information System (INIS)

    Tereshchenko, O.E.

    2006-01-01

    The InSb(0 0 1) surfaces chemically treated in HCl-isopropanol solution and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and electron energy-loss spectroscopy (EELS). The HCl-isopropanol treatment removes indium and antimony oxides and leaves on the surface about 3 ML of physisorbed overlayer, containing indium chlorides and small amounts of antimony, which can be thermally desorbed at 230 deg. C. The residual carbon contaminations were around 0.2-0.4 ML and consisted of the hydrocarbon molecules. These hydrocarbon contaminations were removed from the surface together with the indium chlorides and antimony overlayer. With increased annealing temperature, a sequence of reconstructions were identified by LEED: (1 x 1), (1 x 3), (4 x 3), and (4 x 1)/c(8 x 2), in the order of decreasing Sb/In ratio. The structural properties of chemically prepared InSb(0 0 1) surface were found to be similar to those obtained by decapping of Sb-capped epitaxial layers

  2. The preparation of polypyrrole surfaces in the presence of mesoporous silica nanoparticles and their biomedical applications

    International Nuclear Information System (INIS)

    Cho, Youngnam; Borgens, Richard Ben

    2010-01-01

    The deposition of carboxylic acid-terminated conducting polymer into two- or three-dimensional structures made up of colloidal particles has been successfully completed. This was accomplished using electrochemical deposition of ordered arrays of mesoporous silica nanoparticles (MSNs) as a template. Subsequent removal of the template yielded a porous polypyrrole surface. The co-polymerization of pyrrole with carboxylic acid-terminated pyrrole derivatives overcame the limitations of a lack of reactive functional groups-by facilitating the direct coupling of the film with biomolecules or drugs on the surface. Such Ppy films were characterized by several techniques: (1) scanning electron microscope (SEM) to evaluate surface topography, (2) x-ray photoelectron spectroscopy (XPS) to assess the chemical composition of the films, (3) four-point probe to measure the conductivity, and cyclic voltammogram to observe surface electroactivity. To assay the biological effectiveness of this preparation, we used phase-contrast light microscopy to compare neurite outgrowth from PC 12 cells grown on Ppy films in the presence and absence of electrical stimulation. These electrically functional, biocompatible composites show promise as novel neural implants that would deliver specific biologically active molecules in a highly localized manner to damaged or otherwise vulnerable cells such as found in the nervous system.

  3. Preparation and surface characteristics of Re3W matrix scandate cathode: An experimental and theoretical study

    Science.gov (United States)

    Lai, Chen; Wang, Jinshu; Zhou, Fan; Liu, Wei; Hu, Peng; Wang, Changhao; Wang, Ruzhi; Miao, Naihua

    2018-05-01

    The Scandia doped thermionic cathodes have received great attention owing to their high electron emission density in past two decades. Here, Scandia doped Re3W matrix scandate (RS) cathodes are fabricated by using Sc2O3 doped Re3W powders that prepared by spray drying method. The micromorphology, surface composition and chemical states of RS cathode are investigated with various modern technologies. It reveals that the reduction temperature of RS powders is dramatically increased by Sc2O3. On the surface of RS cathode, a certain amount of Sc2O3 nanoparticles and barium salt submicron particles are observed. According to the in situ Auger electron spectroscopy analysis, the concentration ratio of Ba:Sc:O is determined to be 2.9:1.1:2.7. The X-ray photoelectron spectroscopy data indicates that low oxidation state of Sc is clearly observed in scandate cathodes. The high atomic ratio of Ba on RS cathode surface is suggested due to the high adsorption of Re3W to Ba. Moreover, RS cathode shows better adsorption to Sc by comparison with conventional tungsten matrix scandate cathode. For RS cathode, the main depletion of Sc is suggested to -OSc desorbing from RS cathode surface. RS cathode is expected to be an impressive thermionic cathode with good emission properties and ion anti-bombarding insensitivity.

  4. Preparation and recognition of surface molecularly imprinted core-shell microbeads for protein in aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Lu Yan, E-mail: yanlu2001@sohu.com [College of Chemistry and Environmental Science, Henan Normal University, 46 Jlanshe Road, Xinxiang 453007 (China); Yan Changling; Gao Shuyan [College of Chemistry and Environmental Science, Henan Normal University, 46 Jlanshe Road, Xinxiang 453007 (China)

    2009-04-01

    In this paper, a surface molecular imprinting technique was reported for preparing core-shell microbeads of protein imprinting, and bovine hemoglobin or bovine serum albumin were used as model proteins for studying the imprinted core-shell microbeads. 3-Aminophenylboronic acid (APBA) was polymerized onto the surface of polystyrene microbead in the presence of the protein templates to create protein-imprinted core-shell microbeads. The various samples were characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Brunauer-Emmett-Teller (BET) methods. The effect of pH on rebinding of the template hemoglobin, the specific binding and selective recognition were studied for the imprinted microbeads. The results show that the bovine hemoglobin-imprinted core-shell microbeads were successfully created. The shell was a sort of imprinted thin films with porous structure and larger surface areas. The imprinted microbeads have good selectivity for templates and high stability. Due to the recognition sites locating at or closing to the surface, these imprinted microbeads have good property of mass-transport. Unfortunately, the imprint technology was not successfully applied to imprinting bovine serum albumin (BSA).

  5. Preparation, Study and Modification of Nanometer-Scale Flat TiO2 Surfaces by Electrochemistry and AFM Techniques

    DEFF Research Database (Denmark)

    Dihn Thi, M. T.; Cleemann, Lars Nilausen; Welinder, Anne Christina

    In order to study local properties of surfaces, it is necessary to control their preparation mode to get reproducible and well characterized samples. The first part of this work concerns the preparation of TiO2 films on Ti substrates that fulfil these criteria. The TiO2 formed by anodisation of t...

  6. The effect of dentine surface preparation and reduced application time of adhesive on bonding strength.

    Science.gov (United States)

    Saikaew, Pipop; Chowdhury, A F M Almas; Fukuyama, Mai; Kakuda, Shinichi; Carvalho, Ricardo M; Sano, Hidehiko

    2016-04-01

    This study evaluated the effects of surface preparation and the application time of adhesives on the resin-dentine bond strengths with universal adhesives. Sixty molars were cut to exposed mid-coronal dentine and divided into 12 groups (n=5) based on three factors; (1) adhesive: G-Premio Bond (GP, GC Corp., Tokyo, Japan), Clearfil Universal Bond (CU, Kuraray Noritake Dental Inc., Okayama, Japan) and Scotchbond Universal Adhesive (SB, 3M ESPE, St. Paul, MN, USA); (2) smear layer preparation: SiC paper ground dentine or bur-cut dentine; (3) application time: shortened time or as manufacturer's instruction. Fifteen resin-dentine sticks per group were processed for microtensile bond strength test (μTBS) according to non-trimming technique (1mm(2)) after storage in distilled water (37 °C) for 24h. Data were analyzed by three-way ANOVA and Dunnett T3 tests (α=0.05). Fractured surfaces were observed under scanning electron microscope (SEM). Another 12 teeth were prepared and cut into slices for SEM examination of bonded interfaces. μTBS were higher when bonded to SiC-ground dentine according to manufacturer's instruction. Bonding to bur-cut dentine resulted in significantly lower μTBS (padhesive resin interface. This was more pronounced when adhesives were bonded with a reduced application time and on bur cut dentine. The performance of universal adhesives can be compromised on bur cut dentine and when applied with a reduced application time. Copyright © 2016 Elsevier Ltd. All rights reserved.

  7. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  8. Green synthesis of water soluble semiconductor nanocrystals and their applications

    Science.gov (United States)

    Wang, Ying

    II-VI semiconductor nanomaterials, e.g. CdSe and CdTe, have attracted great attention over the past decades due to their fascinating optical and electrical properties. The research presented here focuses on aqueous semiconductor nanomaterials. The work can be generally divided into three parts: synthesis, property study and application. The synthetic work is devoted to develop new methods to prepare shape- and structure-controlled II-VI semiconductor nanocrystals including nanoparticles and nanowires. CdSe and CdSe CdS semiconductor nanocrystals have been synthesized using sodium citrate as a stabilizer. Upon prolonged illumination with visible light, photoluminescence quantum yield of those quantum dots can be enhanced up to 5000%. The primary reason for luminescence enhancement is considered to be the removing of specific surface states (photocorrosion) and the smoothing of the CdSe core surface (photoannealing). CdTe nanowires are prepared through self-organization of stabilizer-depleted CdTe nanoparticles. The dipolar-dipolar attraction is believed to be the driving force of nanowire formation. The rich surface chemistry of CdTe nanowire is reflected by the formation of silica shell with different morphologies when nanowires with different capping ligands are used. Te and Se nanowires are prepared by chemical decomposition of CdTe and CdSe nanoparticles in presence of an external chemical stimulus, EDTA. These results not only provide a new example of NP→NW transformation, but also lead to a better understanding of the molecular process occurring in the stabilizer-depleted nanoparticles. The applications of those semiconductor materials are primarily based on the construction of nano-structured ultrathin films with desirable functions by using layer-by-layer technique (LBL). We demonstrate that light-induced micro-scale multicolor luminescent patterns can be obtained on photoactivable CdSe/CdS nanoparticles thin films by combining the advantages of LBL as

  9. Mechanistic Characteristics of Surface Modified Organic Semiconductor g-C3N4 Nanotubes Alloyed with Titania

    Directory of Open Access Journals (Sweden)

    Lan Ching Sim

    2017-01-01

    Full Text Available The visible-light-driven photocatalytic degradation of Bisphenol A (BPA was investigated using the binary composite of alkaline treated g-C3N4 (HT-g-C3N4 deposited over commercial TiO2 (Evonik Degussa GmbH, Essen, Germany. The existence and contribution of both TiO2 and g-C3N4/HT-g-C3N4 in the composite was confirmed through various analytical techniques including powder X-ray diffraction (XRD, high-resolution transmission electron microscopy (HRTEM, field emission scanning electron microscopy (FESEM, Fourier transform infrared spectroscopy (FTIR, X-ray photoelectron spectroscopy (XPS, ultraviolet-visible diffuse reflectance spectra (UV-vis-DRS, and photoluminescence (PL analysis. The results showed that the titania in the binary composite exhibited both pure rutile and anatase phases. The morphological analysis indicated that the spongy “morel-like” structure of g-C3N4 turned to nanotube form after alkaline hydrothermal treatment and thereby decreased the specific surface area of HT-g-C3N4. The low surface area of HT-g-C3N4 dominates its promising optical property and effective charge transfer, resulting in a deprived degradation efficiency of BPA two times lower than pure g-C3N4. The binary composite of HT-g-C3N4/TiO2 exhibited excellent degradation efficiency of BPA with 2.16 times higher than the pure HT-g-C3N4. The enhanced photocatalytic activity was mainly due to the promising optical band gap structure with heterojunction interface, favorable specific surface area, and good charge separation.

  10. Mechanistic Characteristics of Surface Modified Organic Semiconductor g-C3N4 Nanotubes Alloyed with Titania

    Science.gov (United States)

    Sim, Lan Ching; Tan, Wei Han; Leong, Kah Hon; Bashir, Mohammed J. K.; Saravanan, Pichiah; Surib, Nur Atiqah

    2017-01-01

    The visible-light-driven photocatalytic degradation of Bisphenol A (BPA) was investigated using the binary composite of alkaline treated g-C3N4 (HT-g-C3N4) deposited over commercial TiO2 (Evonik Degussa GmbH, Essen, Germany). The existence and contribution of both TiO2 and g-C3N4/HT-g-C3N4 in the composite was confirmed through various analytical techniques including powder X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible diffuse reflectance spectra (UV-vis-DRS), and photoluminescence (PL) analysis. The results showed that the titania in the binary composite exhibited both pure rutile and anatase phases. The morphological analysis indicated that the spongy “morel-like” structure of g-C3N4 turned to nanotube form after alkaline hydrothermal treatment and thereby decreased the specific surface area of HT-g-C3N4. The low surface area of HT-g-C3N4 dominates its promising optical property and effective charge transfer, resulting in a deprived degradation efficiency of BPA two times lower than pure g-C3N4. The binary composite of HT-g-C3N4/TiO2 exhibited excellent degradation efficiency of BPA with 2.16 times higher than the pure HT-g-C3N4. The enhanced photocatalytic activity was mainly due to the promising optical band gap structure with heterojunction interface, favorable specific surface area, and good charge separation. PMID:28772387

  11. A facile dip-coating process for preparing highly durable superhydrophobic surface with multi-scale structures on paint films.

    Science.gov (United States)

    Cui, Zhe; Yin, Long; Wang, Qingjun; Ding, Jianfu; Chen, Qingmin

    2009-09-15

    Superhydrophobic surfaces with multi-scale nano/microstructures have been prepared on epoxy paint surfaces using a feasible dip-coating process. The microstructures with 5-10 microm protuberances were first prepared on epoxy paint surface by sandblast. Then the nanostructures were introduced on the microstructure surface by anchoring 50-100 nm SiO(2) particles (nano-SiO(2)) onto the sandblasted paint surface, which was completed by dip-coating with a nano-SiO(2)/epoxy adhesive solution (M1). At last the surface was further modified for enhancing hydrophobicity by another dip-coating with a solution of a low surface energy polymer, aminopropyl terminated polydimethylsiloxane (ATPS) modified epoxy adhesive (M2). The water contact angle of the as-prepared samples reached as high as 167.8 degrees and the sliding angle was 7 degrees. The prepared superhydrophobic surface exhibited excellent durability to the high speed scouring test and high stability in neutral and basic aqueous solutions and some common organic solvents. In addition, this method can be adopted to fabricate large scale samples with a good homogeneity of the whole surface at very low cost.

  12. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  13. Preparation of Robust Superhydrophobic Halloysite Clay Nanotubes via Mussel-Inspired Surface Modification

    Directory of Open Access Journals (Sweden)

    Yang Meng

    2017-11-01

    Full Text Available In this study, a novel and convenient bio-inspired modification strategy was used to create stable superhydrophobic structures on halloysite clay nanotubes (HNTs surfaces. The polydopamine (PDA nanoparticles can firmly adhere on HNTs surfaces in a mail environment of pH 8.5 via the oxidative self-polymerization of dopamine and synthesize a rough nano-layer assisted with vitamin M, which provides a catechol functional platform for the secondary reaction to graft hydrophobic long-chain alkylamine for preparation of hierarchical micro/nano structures with superhydrophobic properties. The micromorphology, crystal structure, and surface chemical composition of the resultant superhydrophobic HNTs were characterized by field emission scanning electron (FE-SEM, transmission electron microscopy (TEM, X-ray diffraction (XRD, Fourier transform infrared spectroscopy (FTIR, and X-ray photoelectron spectroscopy (XPS. The as-formed surfaces exhibited outstanding superhydrophobicity with a water contact angle (CA of 156.3 ± 2.3°, while having little effect on the crystal structures of HNTs. Meanwhile, the resultant HNTs also showed robust stability that can conquer various harsh conditions including strong acidic/alkaline solutions, organic solvents, water boiling, ultrasonic cleaning, and outdoor solar radiation. In addition, the novel HNTs exhibited excellent packaged capabilities of phase change materials (PCMs for practical application in thermal energy storage, which improved the mass fractions by 22.94% for stearic acid and showed good recyclability. These HNTs also exhibited good oil/water separation ability. Consequently, due to the superior merits of high efficiency, easy operation, and non-toxicity, this bionic surface modification approach may make HNTs have great potentials for extensive applications.

  14. Further Investigation Into the Use of Laser Surface Preparation of Ti-6Al-4V Alloy for Adhesive Bonding

    Science.gov (United States)

    Palmieri, Frank L.; Crow, Allison; Zetterberg, Anna; Hopkins, John; Wohl, Christopher J.; Connell, John W.; Belcher, Tony; Blohowiak, Kay Y.

    2014-01-01

    Adhesive bonding offers many advantages over mechanical fastening, but requires robust materials and processing methodologies before it can be incorporated in primary structures for aerospace applications. Surface preparation is widely recognized as one of the key steps to producing robust and predictable bonds. This report documents an ongoing investigation of a surface preparation technique based on Nd:YAG laser ablation as a replacement for the chemical etch and/or abrasive processes currently applied to Ti-6Al-4V alloys. Laser ablation imparts both topographical and chemical changes to a surface that can lead to increased bond durability. A laser based process provides an alternative to chemical-immersion, manual abrasion, and grit blast process steps which are expensive, hazardous, environmentally unfriendly, and less precise. In addition, laser ablation is amenable to process automation, which can improve reproducibility to meet quality standards for surface preparation. An update on work involving adhesive property testing, surface characterization, surface stability, and the effect of laser surface treatment on fatigue behavior is presented. Based on the tests conducted, laser surface treatment is a viable replacement for the immersion chemical surface treatment processes. Testing also showed that the fatigue behavior of the Ti-6Al-4V alloy is comparable for surfaces treated with either laser ablation or chemical surface treatment.

  15. Interface doping of conjugated organic films by means of diffusion of atomic components from the surfaces of semiconductors and of metal oxides.

    Science.gov (United States)

    Komolov, A S; Akhremtchik, S N; Lazneva, E F

    2011-08-15

    The paper reports the results on the interface formation of 5-10 nm thick conjugated layers of Cu-phthalocyanine (CuPc) with a number of solid surfaces: polycrystalline Au, (SiO(2))n-Si, ZnO(0 0 0 1), Si(1 0 0), Ge(1 1 1), CdS(0 0 0 1) and GaAs(1 0 0). The results were obtained using Auger electron spectroscopy (AES) and low-energy target current electron spectroscopy (TCS). The organic overlayers were thermally deposited in situ in UHV onto substrate surfaces. The island-like organic deposits were excluded from the analysis so that only uniform organic deposits were considered. In the cases of polycrystalline Au, Si(1 0 0) and Ge(1 1 1) substrates the AES peaks of the substrate material attenuated down to the zero noise level upon the increase of the CuPc film thickness of 8-10 nm. The peaks corresponding to oxygen atoms in the case of SiO(2) substrate, and to atoms from the ZnO, GaAs and CdS substrates were clearly registered in the AES spectra of the 8-10 nm thick CuPc deposits. The relative concentration of the substrate atomic components diffused into the film was different from their relative concentration at the pure substrate surface. The concentration of the substrate dopant atoms in the CuPc film was estimated as one atom per one CuPc molecule. Using the target current electron spectroscopy, it was shown that the substrate atoms admixed in the CuPc film account for the appearance of a new peak in the density of unoccupied electronic states. Formation of intermediate TCS spectra until the CuPc deposit reaches 2-3 nm was observed in the cases of GaAs(1 0 0), ZnO(0 0 0 1), Ge(1 1 1) surfaces. The intermediate spectra show a less pronounced peak structure different from the one typical for the CuPc films. It was suggested that the intermediate layer was formed by the CuPc molecules fully or partially decomposed due to the interaction with the relatively reactive semiconductor surfaces. Copyright © 2010 Elsevier B.V. All rights reserved.

  16. Preparation of porous polymer monoliths featuring enhanced surface coverage with gold nanoparticles

    KAUST Repository

    Lv, Yongqin

    2012-10-01

    A new approach to the preparation of porous polymer monoliths with enhanced coverage of pore surface with gold nanoparticles has been developed. First, a generic poly(glycidyl methacrylate-co-ethylene dimethacrylate) monolith was reacted with cystamine followed by the cleavage of its disulfide bonds with tris(2-carboxylethyl)phosphine, which liberated the desired thiol groups. Dispersions of gold nanoparticles with sizes varying from 5 to 40. nm were then pumped through the functionalized monoliths. The materials were then analyzed using both energy dispersive X-ray spectroscopy and thermogravimetric analysis. We found that the quantity of attached gold was dependent on the size of nanoparticles, with the maximum attachment of more than 60. wt% being achieved with 40. nm nanoparticles. Scanning electron micrographs of the cross sections of all the monoliths revealed the formation of a non-aggregated, homogenous monolayer of nanoparticles. The surface of the bound gold was functionalized with 1-octanethiol and 1-octadecanethiol, and these monolithic columns were used successfully for the separations of proteins in reversed phase mode. The best separations were obtained using monoliths modified with 15, 20, and 30. nm nanoparticles since these sizes produced the most dense coverage of pore surface with gold. © 2012 Elsevier B.V.

  17. [Preparation and catalytic activity of surface-modification CNTs/TiO2 composite photocatalysts].

    Science.gov (United States)

    Wang, Huan-Ying; Li, Wen-Jun; Chang, Zhi-Dong; Zhou, Hua-Lei; Guo, Hui-Chao

    2011-09-01

    A novel kind of carbon nanotubes/titanium dioxide (CNTs/TiO2) composite photocatalyst was prepared by a modified sol-gel method in which the nanoscaled TiO2 particles were uniformly deposited on the CNTs modified with poly(vinyl pyrrolidone) (PVP). The composites were characterized by a range of analytical techniques including high resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The results show the successful covering of the CNTs with PVP, forming core-shell structure. The nanoscaled TiO2 particles were uniformly deposited on the surface of CNTs reducing the bare CNTs which avoid losing the absorption and scattering of photons. The combination of CNTs and TiO2 particles imply the enhanced interactions between the CNTs and TiO2 interface which possibly becomes heterojunction. The composites become mesoporous crystalline TiO2 (anatase) clusters after annealing at 500 degrees C, and the surface area increases obviously. The photocatalytic activities of surface modification CNTs/TiO2 (smCNTs/TiO2) composites are extremely enhanced from the results of the photodegradation of methylene blue (MB).

  18. Influence of surface treatment on preparing nanosized TiO2 supported on carbon nanotubes

    International Nuclear Information System (INIS)

    Wang Shuo; Ji Lijun; Wu Bin; Gong Qianming; Zhu Yuefeng; Liang Ji

    2008-01-01

    In this paper, nanosize titanium dioxide (TiO 2 ) deposited on pristine and acid treated carbon nanotubes (CNTs) were prepared by a modified sol-gel method. The nanoscale materials were extensively characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectrometer (FTIR) and Raman spectra. The results indicated that about 6.8 nm TiO 2 nanoparticles were successfully deposited on acid-treated CNTs surface homogeneously and densely, which was smaller than TiO 2 coated on pristine CNTs. The surface state of CNTs was a critical factor in obtaining a homogeneous distribution of nanoscale TiO 2 particles. Acid oxidization could etch the surface of CNTs and introduce functional groups, which were beneficial to controllable homogeneous deposition. The TiO 2 coated on acid-treated CNTs was used as photocatalyst for Reactive Brilliant Red X-3B dye degradation under UV irradiation, which showed higher efficiency than that of TiO 2 coated on pristine CNTs and commercial photocatalyst P25.

  19. Thin film transistor performance of amorphous indium–zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol–gel processing

    Science.gov (United States)

    Kodzasa, Takehito; Nobeshima, Taiki; Kuribara, Kazunori; Yoshida, Manabu

    2018-05-01

    We have fabricated an amorphous indium–zinc oxide (IZO, In/Zn = 3/1) semiconductor thin-film transistor (AOS-TFT) by the sol–gel technique using ultraviolet (UV) photoirradiation and post-treatment in high-pressure O2 at 200 °C. The obtained TFT showed a hole carrier mobility of 0.02 cm2 V‑1 s‑1 and an on/off current ratio of 106. UV photoirradiation leads to the decomposition of the organic agents and hydroxide group in the IZO gel film. Furthermore, the post-treatment annealing at a high O2 pressure of more than 0.6 MPa leads to the filling of the oxygen vacancies in a poor metal–oxygen network in the IZO film.

  20. Differences in the composition of organic impurities in ground and surface waters. Consequences for the preparation of boiler feed water

    International Nuclear Information System (INIS)

    Huber, S.A.

    2002-01-01

    It is generally accepted that current limits for total organic carbon (TOC) in the pharmaceutical industry (500 ppb) and semiconductor industry (10-25 ppb) should be regarded as precautionary measures and do not necessarily reflect true scientific evidence. For the power industry the situation is different. Here, recommended TOC-limits for boiler feed waters (in 1999: VGB: 200 ppb; EPRI: 100 ppb) are based on scientific and empirical data. The oxidation of, say, 50 ppb TOC to carbon dioxide in the water/steam cycle will increase steam condensate conductivity by 0.48 μ S /cm (values may depend on literature source, here [1]), a value which is not acceptable as it desensitizes the detection of leaks in cooling water heat exchangers. Apart from this indirect effect of TOC there is also evidence for direct negative effects of TOC on steel materials. Even small amounts of organic acids, which are produced as intermediates in the TOC oxidation process, may locally lower the pH down to levels [2] where erosion corrosion of boiler tubes can take place. It was also found that carbon is enriched in stress corrosion cracks of turbine materials [3]. The present paper will discuss the ''TOC-issue'' in boiler feed water preparation. Most of the results can be applied also to other industries, e.g. semiconductor, chemical or pharmaceutical. (authors)

  1. Highly reproducible surface-enhanced Raman scattering-active Au nanostructures prepared by simple electrodeposition: origin of surface-enhanced Raman scattering activity and applications as electrochemical substrates.

    Science.gov (United States)

    Choi, Suhee; Ahn, Miri; Kim, Jongwon

    2013-05-24

    The fabrication of effective surface-enhanced Raman scattering (SERS) substrates has been the subject of intensive research because of their useful applications. In this paper, dendritic gold (Au) rod (DAR) structures prepared by simple one-step electrodeposition in a short time were examined as an effective SERS-active substrate. The SERS activity of the DAR surfaces was compared to that of other nanostructured Au surfaces with different morphologies, and its dependence on the structural variation of DAR structures was examined. These comparisonal investigations revealed that highly faceted sharp edge sites present on the DAR surfaces play a critical role in inducing a high SERS activity. The SERS enhancement factor was estimated to be greater than 10(5), and the detection limit of rhodamine 6G at DAR surfaces was 10(-8)M. The DAR surfaces exhibit excellent spot-to-spot and substrate-to-substrate SERS enhancement reproducibility, and their long-term stability is very good. It was also demonstrated that the DAR surfaces can be effectively utilized in electrochemical SERS systems, wherein a reversible SERS behavior was obtained during the cycling to cathodic potential regions. Considering the straightforward preparation of DAR substrates and the clean nature of SERS-active Au surfaces prepared in the absence of additives, we expect that DAR surfaces can be used as cost-effective SERS substrates in analytical and electrochemical applications. Copyright © 2013 Elsevier B.V. All rights reserved.

  2. Preparation and Characterization of Highly Spherical Silica-titania Aerogel Beads with High Surface Area

    Directory of Open Access Journals (Sweden)

    YU Yu-xi

    2017-02-01

    Full Text Available The silica-titania aerogel beads were synthesized through sol-gel reaction followed by supercritical drying, in which TEOS and TBT as co-precursors, EtOH as solvents, HAC and NH3·H2O as catalysts. The as-prepared aerogel beads were characterized by SEM,TEM,XRD,FT-IR,TG-DTA and nitrogen adsorption-desorption. The results indicate that the diameter distribution of beads are between 1-8mm, the average diameter of beads is 3.5mm. The aerogel beads have nanoporous network structure with high specific surface area of 914.5m2/g, and the TiO2 particles are distributed in the aerogel uniformly, which keep the anatase crystal under high temperature.

  3. Optimization of Preparation of Antioxidative Peptides from Pumpkin Seeds Using Response Surface Method

    Science.gov (United States)

    Fan, Sanhong; Hu, Yanan; Li, Chen; Liu, Yanrong

    2014-01-01

    Protein isolates of pumpkin (Cucurbita pepo L) seeds were hydrolyzed by acid protease to prepare antioxidative peptides. The hydrolysis conditions were optimized through Box-Behnken experimental design combined with response surface method (RSM). The second-order model, developed for the DPPH radical scavenging activity of pumpkin seed hydrolysates, showed good fit with the experiment data with a high value of coefficient of determination (0.9918). The optimal hydrolysis conditions were determined as follows: hydrolyzing temperature 50°C, pH 2.5, enzyme amount 6000 U/g, substrate concentration 0.05 g/ml and hydrolyzing time 5 h. Under the above conditions, the scavenging activity of DPPH radical was as high as 92.82%. PMID:24637721

  4. n-Alkylamine-assisted preparation of a high surface area vanadyl phosphate/tetraethylorthosilicate nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, João Paulo L., E-mail: billbrujah@yahoo.com.br [Departamento de Química, Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, Av. Bandeirantes 3900, Ribeirão Preto, SP 14040-901 (Brazil); Zampronio, Elaine C.; Oliveira, Herenilton P. [Departamento de Química, Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, Av. Bandeirantes 3900, Ribeirão Preto, SP 14040-901 (Brazil)

    2013-02-15

    Graphical abstract: CuK{sub α} X-ray diffraction patterns of the VP, VPOc, VPOcT, VPOcT200 and VPOcT500. Highlights: ► TEOS and octylamine incorporation into the VP was achieved by expanding the lamellar. ► The specific surface area increased from 15 m{sup 2} g{sup −1} in VP to 237 m{sup 2} g{sup −1} in VPOcT. ► The VPOcT exhibited thermal resistance up to 200 °C in air. ► Upon thermal treatment up to 500 °C, the surface area increased to 838 m{sup 2} g{sup −1}. -- Abstract: We have developed a vanadyl phosphate/tetraethylorthosilicate (VPO/TEOS) nanocomposite comprised of silicate chains interleaved with VPO layers, prepared by using an n-alkylamines such as octylamine as the structure directing agent. The nanocomposites were synthesized by reacting amine-intercalated vanadyl phosphate with tetraethylorthosilicate via the soft chemistry approach. The synthetic procedure encompassed the exfoliation of the layered vanadyl phosphate as well as the reorganization of this exfoliated solid into a mesostructured lamellar phase with the same V–P–O connectivity as in the original matrix. TEOS incorporation into the vanadyl phosphate was achieved by expanding the lamellar structure with n-alkylamine (Δd = 13 Å with n-octylamine). The specific surface area increased from 15 m{sup 2} g{sup −1} in the vanadyl phosphate matrix to 237 m{sup 2} g{sup −1} in VPOcT, and the isotherm curves revealed the characteristic hysteresis of mesoporous materials. Upon thermal treatment up to 500 °C, the surface area increased to 837 m{sup 2} g{sup −1}, which is suitable for catalytic purposes.

  5. High surface area microporous activated carbons prepared from Fox nut (Euryale ferox) shell by zinc chloride activation

    International Nuclear Information System (INIS)

    Kumar, Arvind; Mohan Jena, Hara

    2015-01-01

    Graphical abstract: - Highlights: • Activated carbons have been prepared from Fox nutshell with chemical activation using ZnCl 2 . • The thermal behavior of the raw material and impregnated raw material has been carried out by thermogravimetric analysis. • The characterizations of the prepared activated carbons have been determined by nitrogen adsorption–desorption isotherms, FTIR, XRD, and FESEM. • The BET surface area and total pore volume of prepared activated carbon has been obtained as 2869 m 2 /g, 2124 m 2 /g, and 1.96 cm 3 /g, respectively. • The microporous surface area, micropore volume, and microporosity percentage of prepared activated carbon has been obtained as 2124 m 2 /g, 1.68 cm 3 /g, and 85.71%, respectively. - Abstract: High surface area microporous activated carbon has been prepared from Fox nutshell (Euryale ferox) by chemical activation with ZnCl 2 as an activator. The process has been conducted at different impregnation (ZnCl 2 /Fox nutshell) ratios (1–2.5) and carbonization temperatures (500–700 °C). The thermal decomposition behavior of Fox nutshell and impregnated Fox nutshell has been carried out by thermogravimetric analysis. The pore properties including the BET surface area, micropore surface area, micropore volume, and pore size distribution of the activated carbons have been determined by nitrogen adsorption–desorption isotherms at −196 °C using the BET, t-plot method, DR, and BJH methods. The BET surface area, the microporous surface area, total pore volume, and micropore volume have been obtained as 2869 m 2 /g, 2124 m 2 /g, 1.96 cm 3 /g, and 1.68 cm 3 /g, respectively, and the microporosity percentage of the prepared activated carbon is 85.71%. The prepared activated carbons have been also characterized with instrumental methods such as Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and field emission scanning electron microscopy (FESEM).

  6. New highly fluorinated styrene-based materials with low surface energy prepared by ATRP

    DEFF Research Database (Denmark)

    Borkar, Sachin; Jankova Atanasova, Katja; Siesler, Heinz W

    2004-01-01

    2,3,5,6-Tetrafluoro-4-(2,2,3,3,3-pentafluoropropoxy)styrene (TF(F-5)S) and 2,3,5,6-tetrafluoro-4-(2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctaoxy)styrene (TF(F,5)S) are prepared by nucleophilic substitution of 2,3,4,5,6-pentafluorostyrene. The neat monomers are subjected to atom transfer...... radical polymerization (ATRP) at 110 degreesC to high conversions in relatively short times, 10-120 min; TF(F-5)S is additionally polymerized at 70 and 90 degreesC. Block copolymers with styrene are prepared by the macroinitiator approach. All polymers, in the number-average molecular weight range from...... than 10 mol %. The fluorinated side chains of P(TF(F-5)S) and P(TF(F-15)S) enrich the surface of thin films, which results in an advancing water contact angle of 117degrees and 122degrees, respectively. Both XPS analyses and contact angle measurements strongly imply that the fluorinated parts...

  7. Application of Response Surface Methodology in Development of Sirolimus Liposomes Prepared by Thin Film Hydration Technique

    Directory of Open Access Journals (Sweden)

    Saeed Ghanbarzadeh

    2013-04-01

    Full Text Available Introduction: The present investigation was aimed to optimize the formulating process of sirolimus liposomes by thin film hydration method. Methods: In this study, a 32 factorial design method was used to investigate the influence of two independent variables in the preparation of sirolimus liposomes. The dipalmitoylphosphatidylcholine (DPPC /Cholesterol (Chol and dioleoyl phosphoethanolamine(DOPE /DPPC molar ratios were selected as the independent variables. Particle size (PS and Encapsulation Efficiency (EE % were selected as the dependent variables. To separate the un-encapsulated drug, dialysis method was used. Drug analysis was performed with a validated RP-HPLC method. Results: Using response surface methodology and based on the coefficient values obtained for independent variables in the regression equations, it was clear that the DPPC/Chol molar ratio was the major contributing variable in particle size and EE %. The use of a statistical approach allowed us to see individual and/or interaction effects of influencing parameters in order to obtain liposomes with desired properties and to determine the optimum experimental conditions that lead to the enhancement of characteristics. In the prediction of PS and EE % values, the average percent errors are found to be as 3.59 and 4.09%. This value is sufficiently low to confirm the high predictive power of model. Conclusion: Experimental results show that the observed responses were in close agreement with the predicted values and this demonstrates the reliability of the optimization procedure in prediction of PS and EE % in sirolimus liposomes preparation.

  8. Concentration-elastic-stress instabilities in the distribution of ions and neutral particles in the insulator layer at the semiconductor surface

    International Nuclear Information System (INIS)

    Gol'dman, E. I.

    2006-01-01

    Mobile impurities in the form of ions and neutral associations are present in the insulator films that isolate the semiconductor from the metal electrode. If temperatures and the polarizing electric field are sufficiently high, impurities concentrate at the insulator-semiconductor interface where they exchange electrons with the semiconductor. It is shown that the pairwise interaction of particles via the field of elastic stresses caused by the concentration-related expansion of the insulator can give rise to an instability in the impurity distribution that is uniform over the contact. The stationary small-scale ordering of the particles over the contact of the insulator with the semiconductor arises in the solution of point defects, which is accompanied by annular flows of the particles

  9. Shear bond strength of two bonding systems on dentin surfaces prepared with Er:YAG laser

    International Nuclear Information System (INIS)

    Dall'Magro, Eduardo

    2001-01-01

    The purpose of this study was to examine the shear bond strength of two bonding dentin systems, one 'one step' (Single Bond - 3M) and one 'self-etching' (Prompt-L-ESPE), when applied on dentin surfaces prepared with Er:YAG laser (2,94μm) that underwent ar not, acid etched. Forty one human molars just extracted were selected and after the cut with diamond disc and included in acrylic resin, resulting in 81 specimens (hemi crowns). After, the specimens were divided in one group treated with sand paper and another two groups treated with Er:YAG laser with 200 mJ and 250 mJ of energy and 2 Hz of frequency. Next, the prepared surfaces received three treatments with following application: 1) acid + Single Bond + Z 250 resin, 2) prompt-L-Pop + Z 250 resin, and 3) acid without, Single Bond + Z 250 resin. The Z 250 resin was applied and photopolymerized in increments on a Teflon matrix that belonged to an apparatus called 'Assembly Apparatus' machine producing cylinders of 3,5 mm of diameter and 5 mm of height. After these specimens were submitted to thermo cycling during 1 minute the 55 deg C and during 1 minute with 5 deg C with a total of 500 cycles for specimen, and the measures of shear bond strength were abstained using EMIC model DL 2000 rehearsed machine, with speed of 0,5 mm/min, measuring the final rupture tension (Mpa). The results showed an statistic superiority of 5% of probability level in dentin flattened with sandpaper and with laser using 200 mJ of energy with aspect to the ones flattened with laser using 250 mJ of energy. It was observed that using 'Single Bond' bonding dentin system the marks were statistically superior at 5% of probability with reference to the use of the Prompt-L-Pop adhesive system. So, it was concluded that Er:YAG Laser with 200 mJ of energy produced similar dentin cavity prepare than sandpaper and Single Bond seemed the best bonding agent system between restorative material and dentin. (author)

  10. Synthesis and Characterization of a Novel Polyacetal & Design and Preparation of Superhydrophobic Photocatalytic Surfaces

    Science.gov (United States)

    Zhao, Yuanyuan

    controlled and thus the rate of photocatalytic reactions can be increased. In addition, the fraction of TiO2 particles that become fully embedded in the polymer surface, and so inaccessible to photocatalysis reactions, can be reduced through lamination process control, thereby reducing costs. In Chapter 4 and Chapter 5, a general approach is presented to incorporating particles into a superhydrophobic surface that catalyze the formation of reactive oxygen species. Superhydrophobic photocatalytic surfaces are prepared using hydrophilic TiO2 nanoparticles and hydrophobic Silicon-Phthalocyanine photosensitizer particles. A stable Cassie state was maintained, even on surfaces fabricated with hydrophilic TiO2 particles, due to significant hierarchical roughness. A triple phase photogenerator is designed and fabricated. By printing the surface on a porous support, oxygen could be flowed through the plastron resulting in significantly higher photooxidation rates relative to a static ambient. Photooxidation of Rhodamine B and BSA were studied on TiO2-containing surfaces and singlet oxygen was trapped on surfaces incorporating Silicon-Phthalocyanine photosensitizer particles. Catalyst particles could be isolated in the plastron to avoid contamination by the solution. This approach may prove useful for water purification and medical devices where isolation of the catalyst particle from the solution is necessary and so Cassie stability is required. (Abstract shortened by UMI.).

  11. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  12. Preparation and Surface Sizing Application of Sizing Agent Based on Collagen from Leather Waste

    Directory of Open Access Journals (Sweden)

    Xuechuan Wang

    2015-09-01

    Full Text Available Collagen extracted from leather waste was modified with maleic anhydride. Then, using ammonium persulfate as an initiator, by pre-modifying collagen reacted with styrene and ethyl acrylate monomers, a vinyl-grafted collagen sizing agent (VGCSA for paper was prepared. Before the experiment, the performance of VGCSA was tested and VGCSA emulsion was applied to the surface sizing of the corrugated paper. Effects of the amount of VGCSA, the compound proportion of VGCSA, and starch and styrene-acrylic emulsion were studied relative to paper properties. The morphological changes of the paper before and after sizing were characterized by SEM. It was found that the collagen reacted with styrene and ethyl acrylate monomers. Through the grafting of vinyl and collagen, the crystallinity and thermal stability of VGCSA increased. The structure of VGCSA was spherical with a uniform size, and the average particle size was approximately 350 to 400 nm. After being sized, the surface fibers of paper became smooth and orderly. The optimal sizing of VGCSA was 8 g/m2. The optimal proportion of VGCSA with starch was 4:6, and the optimal proportion of VGCSA with SAE was 2:8. The research indicates that collagen extracted from leather waste could be used as a biomaterial, and environmental and economic benefits could be created as well.

  13. New pathway to prepare gold nanoparticles and their applications in catalysis and surface-enhanced Raman scattering.

    Science.gov (United States)

    Chang, Chun-Chao; Yang, Kuang-Hsuan; Liu, Yu-Chuan; Hsu, Ting-Chu

    2012-05-01

    As shown in the literature, additional energies are necessary for the reduction of positively charged noble metal ions to prepare metal nanoparticles (NPs). In this work, we report a new green pathway to prepare Au NPs in neutral 0.1M NaCl aqueous solutions from bulk Au substrates without addition of any stabilizer and reductant just via aid of natural chitosan (Ch) at room temperature. Au- and Ch-containing complexes in aqueous solution were electrochemically prepared. The role of Ch is just an intermediate to perform electron transfer with Au NPs. The stability of these prepared Au NPs is well maintained by Au NPs themselves with slightly positively charged Au remained on the surface of Au NPs. The particle size of prepared spherical Au (111) NPs is ca. 15 nm in diameter. Moreover, increasing the pH of preparation solutions can be contributive to preparing concentrated Au NPs in solutions. The prepared Au NPs are surface-enhanced Raman scattering (SERS)-active for probe molecules of Rhodamine 6G. They also demonstrate significantly catalytic activity for decomposition of acetaldehyde in rice wine. Copyright © 2012 Elsevier B.V. All rights reserved.

  14. Laser activation-modification of semiconductor surfaces (LAMSS) of 1-alkenes on silicon: A ToF-SIMS, chemometrics, and AFM analysis

    International Nuclear Information System (INIS)

    Pei Lei; Jiang Guilin; Davis, Robert C.; Shaver, Jeremy M.; Smentkowski, Vincent S.; Asplund, Matthew C.; Linford, Matthew R.

    2007-01-01

    Laser-activation-modification of semiconductor surfaces (LAMSS) was carried out on silicon with a series of 1-alkenes. These laser spots were studied by time of flight secondary ion mass spectrometry (ToF-SIMS). The resulting spectra were analyzed using the multivariate curve resolution (MCR) method within the Automated eXpert Spectral Image Analysis (AXSIA) toolkit, and also by MCR and cluster analysis using commercially available toolboxes for Matlab: the PLS T oolbox and the MIA T oolbox, respectively. AXSIA based MCR generally finds three components for the spectral images: one for the background and two for the laser-activated spots, for both the positive and negative ion images. The negative ion component spectra from the spots show increased carbon and hydrogen signals compared to oxygen. They also show reduced chlorine and fluorine (contamination) peaks. In order to compare AXSIA-MCR results from different images, the AXSIA component spectra of different spots were further analyzed by principal components analysis (PCA). PCA of all of the negative ion components shows that component 1 is chemically distinct from components 2 and 3. PCA of all of the positive ion components yields the same result. The loadings plots of this PCA analysis confirm that component 1 generally contains fragments expected from the substrate, while components 2 and 3 contain fragments expected from an overlayer composed of alkyl chains in the spots. A comparison of the two MCR analyses suggests that roughly the same information can be obtained from AXSIA, which is not commercially available, and the PLS T oolbox. Cluster analysis of the data also clearly separates the spots from the backgrounds. A key finding from these analyses is that the degree of surface functionalization in a LAMSS spot appears to decrease radially from the center of the spot. Finally, a comparison of atomic force microscopy (AFM) of the spots versus the AXSIA analysis of the ToF-SIMS data produced another

  15. Laser activation-modification of semiconductor surfaces (LAMSS) of 1-alkenes on silicon: A ToF-SIMS, chemometrics, and AFM analysis

    Energy Technology Data Exchange (ETDEWEB)

    Pei Lei [Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602 (United States); Jiang Guilin [Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602 (United States); Department of Bioengineering, University of Washington, Seattle, WA (United States); Davis, Robert C. [Department of Physics and Astronomy, Brigham Young University, Provo, UT 84602 (United States); Shaver, Jeremy M. [Eigenvector Research Inc., Wenatchee, WA 98801 (United States); Smentkowski, Vincent S. [GE Global Research, 1 Research Circle, Niskayuna, NY (United States); Asplund, Matthew C. [Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602 (United States); Linford, Matthew R. [Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602 (United States)]. E-mail: mrlinford@chem.byu.edu

    2007-04-15

    Laser-activation-modification of semiconductor surfaces (LAMSS) was carried out on silicon with a series of 1-alkenes. These laser spots were studied by time of flight secondary ion mass spectrometry (ToF-SIMS). The resulting spectra were analyzed using the multivariate curve resolution (MCR) method within the Automated eXpert Spectral Image Analysis (AXSIA) toolkit, and also by MCR and cluster analysis using commercially available toolboxes for Matlab: the PLS{sub T}oolbox and the MIA{sub T}oolbox, respectively. AXSIA based MCR generally finds three components for the spectral images: one for the background and two for the laser-activated spots, for both the positive and negative ion images. The negative ion component spectra from the spots show increased carbon and hydrogen signals compared to oxygen. They also show reduced chlorine and fluorine (contamination) peaks. In order to compare AXSIA-MCR results from different images, the AXSIA component spectra of different spots were further analyzed by principal components analysis (PCA). PCA of all of the negative ion components shows that component 1 is chemically distinct from components 2 and 3. PCA of all of the positive ion components yields the same result. The loadings plots of this PCA analysis confirm that component 1 generally contains fragments expected from the substrate, while components 2 and 3 contain fragments expected from an overlayer composed of alkyl chains in the spots. A comparison of the two MCR analyses suggests that roughly the same information can be obtained from AXSIA, which is not commercially available, and the PLS{sub T}oolbox. Cluster analysis of the data also clearly separates the spots from the backgrounds. A key finding from these analyses is that the degree of surface functionalization in a LAMSS spot appears to decrease radially from the center of the spot. Finally, a comparison of atomic force microscopy (AFM) of the spots versus the AXSIA analysis of the ToF-SIMS data produced

  16. Insulated InP (100) semiconductor by nano nucleus generation in pure water

    Science.gov (United States)

    Ghorab, Farzaneh; Es'haghi, Zarrin

    2018-01-01

    Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

  17. Fabrication and characterization of 6,13-bis(triisopropylsilylethynyl)-pentacene active semiconductor thin films prepared by flow-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Mohamad, Khairul Anuar; Rusnan, Fara Naila; Seria, Dzulfahmi Mohd Husin; Saad, Ismail; Alias, Afishah [Nano Engineering & Materials (NEMs) Research Group, Faculty of Engineering Universiti Malaysia Sabah, Kota Kinabalu 88400 Sabah (Malaysia); Katsuhiro, Uesugi; Hisashi, Fukuda [Division of Engineering for Composite Functions, Muroran Institute of Technology 27-1 Mizumoto, Muroran 050-8585 Hokkaido (Japan)

    2015-08-28

    Investigation on the physical characterization and comparison of organic thin film based on a soluble 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene is reported. Oriented thin-films of pentacene have been successfully deposited by flow-coating method, in which the chloroform solution is sandwiched between a transparent substrate and a slide glass, followed by slow-drawing of the substrate with respect to the slide glass. Molecular orientation of flow-coated TIPS-pentacene is comparable to that of the thermal-evaporated pentacene thin film by the X-ray diffraction (XRD) results. XRD results showed that the morphology of flow-coated soluble pentacene is similar to that of the thermal-evaporated pentacene thin films in series of (00l) diffraction peaks where the (001) diffraction peaks are strongest in the nominally out-of-plane intensity and interplanar spacing located at approximately 2θ = 5.33° (d-spacing, d{sub 001} = 16 Å). Following that, ITO/p-TIPS-pentacene/n-ZnO/Au vertical diode was fabricated. The diode exhibited almost linear characteristics at low voltage with nonlinear characteristics at higher voltage which similar to a pn junction behavior. The results indicated that the TIPS-pentacene semiconductor active thin films can be used as a hole injection layer for fabrication of a vertical organic transistor.

  18. Uniform-sized silicone oil microemulsions: preparation, investigation of stability and deposition on hair surface.

    Science.gov (United States)

    Nazir, Habiba; Lv, Piping; Wang, Lianyan; Lian, Guoping; Zhu, Shiping; Ma, Guanghui

    2011-12-01

    Emulsions are commonly used in foods, pharmaceuticals and home-personal-care products. For emulsion based products, it is highly desirable to control the droplet size distribution to improve storage stability, appearance and in-use property. We report preparation of uniform-sized silicone oil microemulsions with different droplets diameters (1.4-40.0 μm) using SPG membrane emulsification technique. These microemulsions were then added into model shampoos and conditioners to investigate the effects of size, uniformity, and storage stability on silicone oil deposition on hair surface. We observed much improved storage stability of uniform-sized microemulsions when the droplets diameter was ≤22.7 μm. The uniform-sized microemulsion of 40.0 μm was less stable but still more stable than non-uniform sized microemulsions prepared by conventional homogenizer. The results clearly indicated that uniform-sized droplets enhanced the deposition of silicone oil on hair and deposition increased with decreasing droplet size. Hair switches washed with small uniform-sized droplets had lower values of coefficient of friction compared with those washed with larger uniform and non-uniform droplets. Moreover the addition of alginate thickener in the shampoos and conditioners further enhanced the deposition of silicone oil on hair. The good correlation between silicone oil droplets stability, deposition on hair and resultant friction of hair support that droplet size and uniformity are important factors for controlling the stability and deposition property of emulsion based products such as shampoo and conditioner. Copyright © 2011 Elsevier Inc. All rights reserved.

  19. Simulation and preparation of surface EVA in reduced gravity at the Marseilles Bay subsea analogue sites

    Science.gov (United States)

    Weiss, P.; Gardette, B.; Chirié, B.; Collina-Girard, J.; Delauze, H. G.

    2012-12-01

    Extravehicular activity (EVA) of astronauts during space missions is simulated nowadays underwater in neutral buoyancy facilities. Certain aspects of weightlessness can be reproduced underwater by adding buoyancy to a diver-astronaut, therefore exposing the subject to the difficulties of working without gravity. Such tests were done at the COMEX' test pool in Marseilles in the 1980s to train for a French-Russian mission to the MIR station, for the development of the European HERMES shuttle and the COLUMBUS laboratory. However, space agencies are currently studying missions to other destinations than the International Space Station in orbit, such as the return to the Moon, NEO (near-Earth objects) or Mars. All these objects expose different gravities: Moon has one sixth of Earth's gravity, Mars has a third of Earth's gravity and asteroids have virtually no surface gravity; the astronaut "floats" above the ground. The preparation of such missions calls for a new concept in neutral buoyancy training, not on man-made structures, but on natural terrain, underwater, to simulate EVA operations such as sampling, locomotion or even anchoring in low gravity. Underwater sites can be used not only to simulate the reduced gravity that astronauts will experience during their field trips, also human factors like stress are more realistically reproduced in such environment. The Bay of Marseille hosts several underwater sites that can be used to simulate various geologic morphologies, such as sink-holes which can be used to simulate astronaut descends into craters, caves where explorations of lava tubes can be trained or monolithic rock structures that can be used to test anchoring devices (e.g., near Earth objects). Marseilles with its aerospace and maritime/offshore heritage hosts the necessary logistics and expertise that is needed to perform such simulations underwater in a safe manner (training of astronaut-divers in local test pools, research vessels, subsea robots and

  20. Comparative evaluation of surface topography of tooth prepared using erbium, chromium: Yttrium, scandium, gallium, garnet laser and bur and its clinical implications.

    Science.gov (United States)

    Verma, Mahesh; Kumari, Pooja; Gupta, Rekha; Gill, Shubhra; Gupta, Ankur

    2015-01-01

    Erbium, chromium: Yttrium, scandium, gallium, garnet (Er, Cr: YSGG) laser has been successfully used in the ablation of dental hard and soft tissues. It has been reported that this system is also useful for preparing tooth surfaces and etching, but no consensus exist in the literature regarding the advantage of lasers over conventional tooth preparation technique. Labial surfaces of 25 extracted human maxillary central incisors were divided into two halves. Right half was prepared with diamond bur and left half with Er, Cr; YSGG laser and a reduction of 0.3-0.5 mm was carried out. Topography of prepared surfaces of five teeth were examined under scanning electron microscope (SEM). The remaining samples were divided into 4 groups of 10 specimens each based on the surface treatment received: One group was acid etched and other was nonetched. Composite resin cylinders were bonded on prepared surfaces and shear bond strength was assessed using a universal testing machine. The SEM observation revealed that the laser prepared surfaces were clean, highly irregular and devoid of a smear layer. Bur prepared surfaces were relatively smooth but covered with smear layer. Highest bond strength was shown by laser prepared acid etched group, followed by bur prepared the acid etched group. The bur prepared nonacid etched group showed least bond strength. Er, Cr: YSGG laser can be used for preparing tooth and bond strength value achieved by laser preparation alone without surface treatment procedure lies in the range of clinical acceptability.

  1. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  2. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  3. [Response surface method optimize of nano-silica solid dispersion technology assistant enzymatic hydrolysis preparation genistein].

    Science.gov (United States)

    Jin, Xin; Zhang, Zhen-Hai; Zhu, Jing; Sun, E; Yu, Dan-Hong; Chen, Xiao-Yun; Liu, Qi-Yuan; Ning, Qing; Jia, Xiao-Bin

    2012-04-01

    This article reports that nano-silica solid dispersion technology was used to raise genistein efficiency through increasing the enzymatic hydrolysis rate. Firstly, genistin-nano-silica solid dispersion was prepared by solvent method. And differential scanning calorimetry (DSC) and transmission electron microscopy (TEM) were used to verify the formation of solid dispersion, then enzymatic hydrolysis of solid dispersion was done by snailase to get genistein. With the conversion of genistein as criteria, single factor experiments were used to study the different factors affecting enzymatic hydrolysis of genistin and its solid dispersion. And then, response surface method was used to optimize of nano-silica solid dispersion technology assistant enzymatic hydrolysis. The optimum condition to get genistein through enzymatic hydrolysis of genistin-nano-silica solid dispersion was pH 7.1, temperature 52.2 degrees C, enzyme concentration 5.0 mg x mL(-1) and reaction time 7 h. Under this condition, the conversion of genistein was (93.47 +/- 2.40)%. Comparing with that without forming the genistin-nano-silica solid dispersion, the conversion increased 2.62 fold. At the same time, the product of hydrolysis was purified to get pure genistein. The method of enzymatic hydrolysis of genistin-nano-silica solid dispersion by snailase to obtain genistein is simple, efficiency and suitable for the modern scale production.

  4. Mechanical, Microstructure and Surface Characterizations of Carbon Fibers Prepared from Cellulose after Liquefying and Curing

    Directory of Open Access Journals (Sweden)

    Xiaojun Ma

    2013-12-01

    Full Text Available In this study, Cellulose-based carbon fibers (CBCFs were prepared from cellulose after phenol liquefaction and curing. The characteristics and properties of CBCFs were examined by scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, X-ray diffraction (XRD, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS. The results showed that, with increasing carbonization temperature, the La, Lc, and Lc/d(002 of CBCFs increased gradually, whereas the degree of disorder R decreased. The –OH, –CH2–, –O–C– and phenyl group characteristic absorption peaks of CBCFs reduced gradually. The cross-linked structure of CBCFs was converted into a graphite structure with a six-ring carbon network during carbonization. The surface of CBCFs were mainly comprised of C–C, C–O, and C=O. The tensile strength, carbonization yield and carbon content of CBCFs obtained at 1000 °C were 1015 MPa, 52%, and 95.04%, respectively.

  5. Standard Methods of Analysis of Sulfochromate Etch Solution Used in Surface Preparation of Aluminum

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2012-01-01

    1.1 These methods offer a means for controlling the effectiveness of the etchant which is normally used for preparing the surface of aluminum alloys for subsequent adhesive bonding. As the etchant reacts with the aluminum, hexavalent chromium is converted to trivalent chromium; a measure of the two and the difference can be used to determine the amount of dichromate used. 1.2 The sulfochromate solution can be replenished by restoring the sodium dichromate and the sulfuric acid to the original formulation levels. The lower limit of usefulness will vary depending upon solution storage, adhesives used, critical nature of bond capability, variety of metals processed, etc. and should be determined. Replenishment will be limited to the number of times the chemical ingredients can be restored and maintained to the required levels and should be determined by the user. Sludge collecting in the bottom of a tank should be minimized by periodic removal of sludge. For some applications, the hexavalent chromium should not ...

  6. Colloidally stable surface-modified iron oxide nanoparticles: Preparation, characterization and anti-tumor activity

    Energy Technology Data Exchange (ETDEWEB)

    Macková, Hana [Institute of Macromolecular Chemistry, AS CR, Heyrovsky Sq. 2, 162 06 Prague 6 (Czech Republic); Horák, Daniel, E-mail: horak@imc.cas.cz [Institute of Macromolecular Chemistry, AS CR, Heyrovsky Sq. 2, 162 06 Prague 6 (Czech Republic); Donchenko, Georgiy Viktorovich; Andriyaka, Vadim Ivanovich; Palyvoda, Olga Mikhailovna; Chernishov, Vladimir Ivanovich [Palladin Institute of Biochemistry, NASU, 9 Leontovich St., 01601 Kiev (Ukraine); Chekhun, Vasyl Fedorovich; Todor, Igor Nikolaevich [R. E. Kavetsky Institute of Experimental Pathology, Oncology and Radiobiology, NASU, 45 Vasylkivska St., 03022 Kiev (Ukraine); Kuzmenko, Oleksandr Ivanovich [Palladin Institute of Biochemistry, NASU, 9 Leontovich St., 01601 Kiev (Ukraine)

    2015-04-15

    Maghemite (γ-Fe{sub 2}O{sub 3}) nanoparticles were obtained by co-precipitation of Fe(II) and Fe(III) chlorides and subsequent oxidation with sodium hypochlorite and coated with poly(N,N-dimethylacrylamide-co-acrylic acid) [P(DMAAm-AA)]. They were characterized by a range of methods including transmission electron microscopy (TEM), elemental analysis, dynamic light scattering (DLS) and zeta potential measurements. The effect of superparamagnetic P(DMAAm-AA)-γ-Fe{sub 2}O{sub 3} nanoparticles on oxidation of blood lipids, glutathione and proteins in blood serum was detected using 2-thiobarbituric acid and the ThioGlo fluorophore. Finally, mice received magnetic nanoparticles administered per os and the antitumor activity of the particles was tested on Lewis lung carcinoma (LLC) in male mice line C57BL/6 as an experimental in vivo metastatic tumor model; the tumor size was measured and the number of metastases in lungs was determined. Surface-modified γ-Fe{sub 2}O{sub 3} nanoparticles showed higher antitumor and antimetastatic activities than commercial CuFe{sub 2}O{sub 4} particles and the conventional antitumor agent cisplatin. - Highlights: • Maghemite nanoparticles were prepared and characterized. • Poly(N,N-dimethylacrylamide-co-acrylic acid) coating was synthetized. • Blood lipid, glutathione and protein peroxidation/oxidation was determined. • Antitumor effect of coated particles on Lewis lung carcinoma in mice was observed.

  7. The nonlinear carrier transport in a bipolar semiconductor sample

    International Nuclear Information System (INIS)

    Konin, A

    2008-01-01

    A theory of formation of the voltage across a bipolar semiconductor sample due to the current flow accounting for the energy band bending near the semiconductor surfaces is presented. The non-equilibrium space charge layers near the sample surfaces and the boundary conditions in the real metal-semiconductor junction have been taken into account. It is shown that the voltage-current relation of a thin sample at weak injection differs essentially from the classical Ohm's law and becomes nonlinear for certain semiconductor surface parameters. Complex voltage-current relations and the photo-induced electromotive force measurements allow determining the surface recombination rate in the real metal-semiconductor junction and the semiconductor surface potential

  8. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  9. Comparative evaluation of surface topography of tooth prepared using erbium, chromium: Yttrium, scandium, gallium, garnet laser and bur and its clinical implications

    Directory of Open Access Journals (Sweden)

    Mahesh Verma

    2015-01-01

    Conclusions: Er, Cr: YSGG laser can be used for preparing tooth and bond strength value achieved by laser preparation alone without surface treatment procedure lies in the range of clinical acceptability.

  10. Optimization on Preparation Condition of Propolis Flavonoids Liposome by Response Surface Methodology and Research of Its Immunoenhancement Activity

    Directory of Open Access Journals (Sweden)

    Ju Yuan

    2013-01-01

    Full Text Available The aim of this study is to prepare propolis flavonoids liposome (PFL and optimize the preparation condition and to investigate further whether liposome could promote the immunoenhancement activity of propolis flavonoids (PF. PFL was prepared with ethanol injection method, and the preparation conditions of PFL were optimized with response surface methodology (RSM. Moreover, the immunoenhancement activity of PFL and PF in vitro was determined. The result showed that the optimal preparation conditions for PFL by response surface methodology were as follows: ratio of lipid to drug (w/w 9.6 : 1, ratio of soybean phospholipid to cholesterol (w/w 8.5 : 1, and speed of injection 0.8 mL·min−1. Under these conditions, the experimental encapsulation efficiency of PFL was 91.67 ± 0.21%, which was close to the predicted value. Therefore, the optimized preparation condition is very reliable. Moreover, the results indicated that PFL could not only significantly promote lymphocytes proliferation singly or synergistically with PHA, but also increase expression level of IL-2 and IFN-γ mRNA. These indicated that liposome could significantly improve the immunoenhancement activity of PF. PFL demonstrates the significant immunoenhancement activity, which provides the theoretical basis for the further experiment in vivo.

  11. A new recipe for preparing oxidized TiO2(1 1 0) surfaces: An STM study

    Science.gov (United States)

    Hansen, Jonas Ø.; Matthiesen, Jesper; Lira, Estephania; Lammich, Lutz; Wendt, Stefan

    2017-12-01

    Using high-resolution scanning tunneling microscopy (STM), we have studied the oxidation of rutile TiO2(1 1 0)-(1 × 1) surfaces with Had species at room temperature. We followed the evolution of various stable species as function of the O2 exposure, and the nature of the ultimately dominating species in the Ti troughs is described. When O2 saturation was accomplished using a glass-capillary array doser, we found that on-top O (Oot) adatoms are the predominant surface species. In contrast, when O2 was supplied via backfilling of the chamber the predominant surface species are tentatively assigned to terminal OH groups. We argue that unintended reactions with the chamber walls have a strong influence on the formed surface species, explaining scattered results in the literature. On the basis of our STM data we propose an alternative, easy way of preparing oxidized TiO2(1 1 0) surfaces with Oot adatoms (o-TiO2). It is certain that o-TiO2(1 1 0) surfaces prepared according to this recipe do not have any residual surface O vacancies. This contradicts the situation when oxidizing reduced TiO2(1 1 0) surfaces with O vacancies, where some O vacancies persist.

  12. Guided access cavity preparation using cone-beam computed tomography and optical surface scans - an ex vivo study

    DEFF Research Database (Denmark)

    Buchgreitz, J; Buchgreitz, M; Mortensen, D

    2016-01-01

    AIM: To evaluate ex vivo, the accuracy of a preparation procedure planned for teeth with pulp canal obliteration (PCO) using a guide rail concept based on a cone-beam computed tomography (CBCT) scan merged with an optical surface scan. METHODOLOGY: A total of 48 teeth were mounted in acrylic bloc...

  13. Morphological Study Of Border Area Of Pulp-Capping Materials And Er:YAG Laser Prepared Hard Dental Surface

    Directory of Open Access Journals (Sweden)

    Stefanova Vessela P.

    2015-03-01

    Full Text Available Introduction: Vital pulp therapy involves biologically based therapeutic activities aimed at restoring health and preserving the vitality of cariously or traumatically damaged pulp. Adaptation of pulp-capping materials to the prepared tooth surface may be the key to the success of biological tooth treatment.

  14. High surface area microporous activated carbons prepared from Fox nut (Euryale ferox) shell by zinc chloride activation

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Arvind; Mohan Jena, Hara, E-mail: hmjena@nitrkl.ac.in

    2015-11-30

    Graphical abstract: - Highlights: • Activated carbons have been prepared from Fox nutshell with chemical activation using ZnCl{sub 2}. • The thermal behavior of the raw material and impregnated raw material has been carried out by thermogravimetric analysis. • The characterizations of the prepared activated carbons have been determined by nitrogen adsorption–desorption isotherms, FTIR, XRD, and FESEM. • The BET surface area and total pore volume of prepared activated carbon has been obtained as 2869 m{sup 2}/g, 2124 m{sup 2}/g, and 1.96 cm{sup 3}/g, respectively. • The microporous surface area, micropore volume, and microporosity percentage of prepared activated carbon has been obtained as 2124 m{sup 2}/g, 1.68 cm{sup 3}/g, and 85.71%, respectively. - Abstract: High surface area microporous activated carbon has been prepared from Fox nutshell (Euryale ferox) by chemical activation with ZnCl{sub 2} as an activator. The process has been conducted at different impregnation (ZnCl{sub 2}/Fox nutshell) ratios (1–2.5) and carbonization temperatures (500–700 °C). The thermal decomposition behavior of Fox nutshell and impregnated Fox nutshell has been carried out by thermogravimetric analysis. The pore properties including the BET surface area, micropore surface area, micropore volume, and pore size distribution of the activated carbons have been determined by nitrogen adsorption–desorption isotherms at −196 °C using the BET, t-plot method, DR, and BJH methods. The BET surface area, the microporous surface area, total pore volume, and micropore volume have been obtained as 2869 m{sup 2}/g, 2124 m{sup 2}/g, 1.96 cm{sup 3}/g, and 1.68 cm{sup 3}/g, respectively, and the microporosity percentage of the prepared activated carbon is 85.71%. The prepared activated carbons have been also characterized with instrumental methods such as Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and field emission scanning electron microscopy (FESEM).

  15. Photoelectrolytic hydrogen production using Bi{sub 2}MNbO{sub 7} (M = Al, Ga) semiconductor film electrodes prepared by dip-coating

    Energy Technology Data Exchange (ETDEWEB)

    Rosas-Barrera, K.L. [Grupo de Investigaciones en Minerales, Biohidrometalurgia y Ambiente - GIMBA, Universidad Industrial de Santander - UIS, Sede Guatiguara, Km. 2 via El Refugio, C.P. 681011, Piedecusta, Santander (Colombia); Pedraza-Avella, J.A. [Centro de Investigaciones en Catalisis - CICAT, Universidad Industrial de Santander - UIS, Sede Guatiguara, Km. 2 via El Refugio, C.P. 681011, Piedecuesta, Santander (Colombia); Ballen-Gaitan, B.P.; Cortes-Pena, J.; Pedraza-Rosas, J.E. [Grupo de Investigaciones en Minerales, Biohidrometalurgia y Ambiente - GIMBA, Universidad Industrial de Santander - UIS, Sede Guatiguara, Km. 2 via El Refugio, C.P. 681011, Piedecusta (Santander) (Colombia); Laverde-Catano, D.A., E-mail: dlaverde@uis.edu.co [Grupo de Investigaciones en Minerales, Biohidrometalurgia y Ambiente - GIMBA, Universidad Industrial de Santander - UIS, Sede Guatiguara, Km. 2 via El Refugio, C.P. 681011, Piedecusta, Santander (Colombia)

    2011-10-25

    The performance of Bi{sub 2}MNbO{sub 7} (M = Al, Ga) films on AISI/SAE 304 stainless steel was evaluated in the photoelectrochemical hydrogen production as a function of the annealing temperature of the films (400, 500 and 600 deg. C) and the composition of the electrolyte solution (containing KOH, KCN and KCl). The films were prepared by sol-gel dip-coating on AISI/SAE 304 stainless steel followed by a thermal annealing. The photoelectrochemical evaluation (UV-Vis, 2.5 V) was carried out in a conventional two-compartment electrochemical cell by using the prepared films as photoanode and a silver plate as cathode. During the process, circulating current was recorded and hydrogen production and cyanide degradation were measured. In both cases, it was found that the higher activity was obtained with the films annealed at 500 deg. C and using an electrolyte solution 0.3 M of KOH and 120 ppm of CN{sup -}. Further works on the subject should involve a cathode evaluation to avoid the electrode polarization in presence of KCl and an experimental design to optimize the evaluated variables.

  16. Manipulating semiconductor colloidal stability through doping.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  17. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  18. Influence of substrate preparation on the shaping of the topography of the surface of nanoceramic oxide layers

    Science.gov (United States)

    Bara, Marek; Kubica, Marek

    2014-02-01

    The paper discusses the shaping mechanism and changes occurring in the structure and topography of the surface of nanoceramic oxide layers during their formation. The paper presents the influence of substrate preparation on the surface topography of oxide layers. The layers were produced via hard anodizing on the EN AW-5251 aluminum alloy. The layers obtained were subjected to microscope examinations, image and chemical composition analyses, and stereometric examinations. Heredity of substrate properties in the topography of the surface of nanoceramic oxide layers formed as a result of electrochemical oxidation has been shown.

  19. Diamond like carbon Ag nanocomposites as a control measure against Campylobacter jejuni and Listeria monocytogenes on food preparation surfaces

    DEFF Research Database (Denmark)

    Tamulevičius, Sigitas; Zakarienė, Gintarė; Novoslavskij, Aleksandr

    2018-01-01

    on selective agars and quantitative real-time PCR (qPCR) including staining with propidium monoazide (PMA). It was determined, that DLC:Ag film was the most efficient coating in the reduction of C. jejuni and L. monocytogenes numbers. Culture-based enumeration revealed that C. jejuni numbers were reduced......:Ag antimicrobial surface showed a reduced ability to grow on culture media, but maintained viability during the whole experiment. Nonetheless, DLC:Ag antimicrobial surface could be further considered for the reduction of cross-contamination risk from food preparation surfaces due to their contamination with C....... jejuni and L. monocytogenes in domestic and commercial kitchens or food establishments....

  20. The strain effect in the surface barrier structures prepared on the basis of n-Si and p-Si

    International Nuclear Information System (INIS)

    Mamatkarimov, O.O.; Tuychiev, U.A.

    2004-01-01

    Full text: One of the ways of creation of large deformations in small volume of the semiconductor is the deformation created by a needle. At insignificant change of external influence the large deformation under a needle in small volume of the semiconductor the significant change of electrophysical parameters of the semiconductor in small volume is created. Therefore, in the present work the results of researches of local pressure influence on physical properties of surface barrier structures has been performed on the basis of silicon with Ni and Mn impurity. The relative changes of a direct current made on the basis n-Si and p-Si from a different degree of compensation are given depending on size of local pressure are shown. Change of current in structures Au-Si -Sb with specific resistance of base ρ=80 Ω·cm and ρ=200 Ω·cm are I p /I 0 =3-3.5 times and I P /I ) =2-2.5 times at pressure P=1.6·10 8 Pa respectively. These data show, that in structures received on the basis of initial silicon, change of a direct current with pressure is in inverse proportion to size of resistance of base of the diode. And in structures Au-Si -Sb with specific resistance of base ρ=5·10 2 Ω·cm and ρ=3·10 3 Ω·cm these changes accordingly are I P /I 0 =7 and I P /I 0 =14. Changes of direct current relative to initial value for structures on the basis p-Si with specific resistance ρ=7·10 2 Ω·cm and ρ=4·10 3 Ω·cm) are I P /I 0 =9 and I P /I 0 =16 respectively. The same changes of direct current of structures on the basis P-Si at local pressure are I P /I 0 =2-2.5. The given values I P /I 0 testify that as in structures Au-Si -Sb, and structures Sb-p-Si -Au, unlike structures on the basis of initial silicon, the values I P /I 0 are increased with increase of specific resistance of base of structures

  1. Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

    International Nuclear Information System (INIS)

    Zhao, W.; Steidl, M.; Paszuk, A.; Brückner, S.; Dobrich, A.; Supplie, O.; Kleinschmidt, P.; Hannappel, T.

    2017-01-01

    Highlights: • We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H_2. • UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied. • After processing the Si(111) surface is free of contamination and atomically flat. • The surface exhibits a (1 × 1) reconstruction and monohydride termination. • Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. - Abstract: For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H_2-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H_2 ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

  2. Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, W.; Steidl, M.; Paszuk, A. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Brückner, S. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany); Dobrich, A. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Supplie, O. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany); Kleinschmidt, P. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Hannappel, T., E-mail: thomas.hannappel@tu-ilmenau.de [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany)

    2017-01-15

    Highlights: • We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H{sub 2}. • UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied. • After processing the Si(111) surface is free of contamination and atomically flat. • The surface exhibits a (1 × 1) reconstruction and monohydride termination. • Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. - Abstract: For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H{sub 2}-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H{sub 2} ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

  3. Surface nucleation and independent growth of Ce(OH)4 within confinement space on modified carbon black surface to prepare nano-CeO2 without agglomeration

    Science.gov (United States)

    Zhang, Xinyue; Xia, Chunhui; Li, Kaitao; Lin, Yanjun

    2018-04-01

    Highly dispersed negative carboxyl groups can be formed on carbon black (CB) surface modified with strong nitric acid. Therefore positive cations can be uniformly absorbed by carboxyl groups and precipitated within a confinement space on modified CB surface to prepare highly dispersed nanomaterials. In this paper, the formation and dispersion status of surface negative carboxyl groups, adsorption status of Ce3+, surface confinement nucleation, crystallization and calcination process were studied by EDS, SEM, and laser particle size analysis. The results show that the carboxyl groups formed on modified CB surface are highly dispersed, and Ce3+ cations can be uniformly anchored by carboxyl groups. Therefore, highly dispersed Ce3+ can react with OH- within a confinement surface region to form positive nano-Ce(OH)4 nuclei which also can be adsorbed by electrostatic attraction. After independent growth of Ce(OH)4 without agglomeration, highly dispersed CeO2 nanoparticles without agglomeration can be prepared together with the help of effectively isolates by CO2 released in the combustion of CB.

  4. Facile and scalable preparation of highly wear-resistance superhydrophobic surface on wood substrates using silica nanoparticles modified by VTES

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Shanshan; Liu, Ming [College of Materials Science and Engineering, Central South University of Forestry and Technology, Changsha 410004 (China); Wu, Yiqiang, E-mail: wuyq0506@126.com [College of Materials Science and Engineering, Central South University of Forestry and Technology, Changsha 410004 (China); Hunan Provincial Collaborative Innovation Center for High-efficiency Utilization of Wood and Bamboo Resources, Central South University of Forestry and Technology, Changsha 410004 (China); Luo, Sha [College of Materials Science and Engineering, Central South University of Forestry and Technology, Changsha 410004 (China); Qing, Yan, E-mail: qingyan0429@163.com [College of Materials Science and Engineering, Central South University of Forestry and Technology, Changsha 410004 (China); Hunan Provincial Collaborative Innovation Center for High-efficiency Utilization of Wood and Bamboo Resources, Central South University of Forestry and Technology, Changsha 410004 (China); Chen, Haibo [College of Materials Science and Engineering, Central South University of Forestry and Technology, Changsha 410004 (China)

    2016-11-15

    Graphical abstract: Highly wear-resistance superhydrophobic surface on wood substrates was fabricated using silica nanoparticles modified by VTES. Display Omitted - Highlights: • Superhydrophobic surface on wood substrates was efficiently fabricated using nanoparticles modified by VTES. • The superhydrophobic surface exhibited a CA of 154° and a SAclose to 0°. • The superhydrophobic surface showed a durable and robust wear-resistance performance. - Abstract: In this study, an efficient, facile method has been developed for fabricating superhydrophobic surfaces on wood substrates using silica nanoparticles modified by VTES. The as-prepared superhydrophobic wood surface had a water contact angle of 154° and water slide angle close to 0°. Simultaneously, this superhydrophobic wood showed highly durable and robust wear resistance when having undergone a long period of sandpaper abrasion or being scratched by a knife. Even under extreme conditions of boiling water, the superhydrophobicity of the as-prepared wood composite was preserved. Characterizations by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and Fourier transform infrared spectroscopy showed that a typical and tough hierarchical micro/nanostructure was created on the wood substrate and vinyltriethoxysilane contributed to preventing the agglomeration of silica nanoparticles and serving as low-surface-free-energy substances. This superhydrophobic wood was easy to fabricate, mechanically resistant and exhibited long-term stability. Therefore, it is considered to be of significant importance in the industrial production of functional wood, especially for outdoor applications.

  5. The Effect of Surface Preparation on the Precipitation of Sigma During High Temperature Exposure of S32205 Duplex Stainless Steel

    Science.gov (United States)

    Jepson, Mark A. E.; Rowlett, Matthew; Higginson, Rebecca L.

    2017-03-01

    Although the formation of sigma phase in duplex stainless steels is reasonably well documented, the effect of surface finish on its formation rate in surface regions has not been previously noted. The growth of the sigma phase precipitated in the subsurface region (to a maximum depth of 120 μm) has been quantified after heat treatment of S32205 duplex stainless steel at 1073 K (800 °C) and 1173 K (900 °C) after preparation to two surface finishes. Here, results are presented that show that there is a change in the rate of sigma phase formation in the surface region of the material, with a coarser surface finish leading to a greater depth of precipitation at a given time and temperature of heat treatment. The growth rate and morphology of the precipitated sigma has been examined and explored in conjunction with thermodynamic equilibrium phase calculations.

  6. Superhydrophobic Surfaces with Very Low Hysteresis Prepared by Aggregation of Silica Nanoparticles During In Situ Urea-Formaldehyde Polymerization.

    Science.gov (United States)

    Diwan, Anubhav; Jensen, David S; Gupta, Vipul; Johnson, Brian I; Evans, Delwyn; Telford, Clive; Linford, Matthew R

    2015-12-01

    We present a new method for the preparation of superhydrophobic materials by in situ aggregation of silica nanoparticles on a surface during a urea-formaldehyde (UF) polymerization. This is a one-step process in which a two-tier topography is obtained. The polymerization is carried out for 30, 60, 120, 180, and 240 min on silicon shards. Silicon surfaces are sintered to remove the polymer. SEM and AFM show both an increase in the area covered by the nanoparticles and their aggregation with increasing polymerization time. Chemical vapor deposition of a fluorinated silane in the presence of a basic catalyst gives these surfaces hydrophobicity. Deposition of this low surface energy silane is confirmed by the F 1s signal in XPS. The surfaces show advancing water contact angles in excess of 160 degrees with very low hysteresis (polymerization times for 7 nm and 14 nm silica, respectively. Depositions are successfully demonstrated on glass substrates after they are primed with a UF polymer layer. Superhydrophobic surfaces can also be prepared on unsintered substrates.

  7. In Situ SIMS and IR Spectroscopy of Well-Defined Surfaces Prepared by Soft Landing of Mass-Selected Ions

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Grant E.; Gunaratne, Kalupathirannehelage Don D.; Laskin, Julia

    2014-06-16

    Soft landing of mass-selected ions onto surfaces is a powerful approach for the highly-controlled preparation of materials that are inaccessible using conventional synthesis techniques. Coupling soft landing with in situ characterization using secondary ion mass spectrometry (SIMS) and infrared reflection absorption spectroscopy (IRRAS) enables analysis of well-defined surfaces under clean vacuum conditions. The capabilities of three soft-landing instruments constructed in our laboratory are illustrated for the representative system of surface-bound organometallics prepared by soft landing of mass-selected ruthenium tris(bipyridine) dications, [Ru(bpy)3]2+, onto carboxylic acid terminated self-assembled monolayer surfaces on gold (COOH-SAMs). In situ time-of-flight (TOF)-SIMS provides insight into the reactivity of the soft-landed ions. In addition, the kinetics of charge reduction, neutralization and desorption occurring on the COOH-SAM both during and after ion soft landing are studied using in situ Fourier transform ion cyclotron resonance (FT-ICR)-SIMS measurements. In situ IRRAS experiments provide insight into how the structure of organic ligands surrounding metal centers is perturbed through immobilization of organometallic ions on COOH-SAM surfaces by soft landing. Collectively, the three instruments provide complementary information about the chemical composition, reactivity and structure of well-defined species supported on surfaces.

  8. Utilization of surface active sites on gold in preparation of highly reactive interfaces for alcohols electrooxidation in alkaline media

    International Nuclear Information System (INIS)

    Cherevko, Serhiy; Kulyk, Nadiia; Chung, Chan-Hwa

    2012-01-01

    Graphical abstract: - Abstract: Pt/Au and Pd/Au surface interfaces show very high activity in electrocatalytic oxidation of alcohols in alkaline media. In this work, we present a method for preparation of such structures, which is based on galvanic displacement of the more noble gold with the less noble elements, and investigate their electrocatalytic properties. We propose that active states atoms on the surface of gold may be replaced with Pt and Pd. The generation of active sites on gold is achieved by cathodization in acidic solution. We show that depending on the cathodization time (active sites amount) gold surface electrochemistry changes from that resembling Au to the one typical for pure Pt. The Pt/Au structures prepared with a trace amount of platinum show extremely high electrocatalytic activity. The peak current of methanol oxidation on the Pt/Au electrode is more than an order of magnitude higher than that of the platinum film electrode and more than two orders of magnitude higher than that on the gold unactivated electrode. The difference in the peak current of ethanol oxidation between the Pt/Au and Pt electrodes is ca. 25 times. Moreover, similar deposition of Pt and Pd on active sites on high surface area gold prepared by hydrogen evolution assisted deposition and improved electrocatalytic properties of such structures toward alcohols oxidation is shown.

  9. Preparation and analysis of amorphous carbon films deposited from (C{sub 6}H{sub 12})/Ar/He chemistry for application as the dry etch hard mask in the semiconductor manufacturing process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seungmoo [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Won, Jaihyung; Choi, Jongsik [TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Jang, Samseok [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); Jee, Yeonhong; Lee, Hyeondeok [TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Byun, Dongjin, E-mail: dbyun@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of)

    2011-08-01

    Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C{sub 6}H{sub 12}) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The deposition characteristics and film properties were investigated by means of ellipsometry, Raman spectroscopy, X-ray photo electron spectroscopy (XPS) and stress analysis. Hardness, Young's modulus, and surface roughness of ACL deposited at 550 deg. C were investigated by using nano-indentation and AFM. The deposition rate was decreased from 5050 A/min to 2160 A/min, and dry etch rate was decreased from 2090 A/min to 1770 A/min, and extinction coefficient was increased from 0.1 to 0.5. Raman analysis revealed a higher shift of the G-peak and a lower shift of the D-peak and the increase of I(D)/I(G) ratio as the deposition temperature was increased from 350 deg. C to 550 deg. C. XPS results of ACL deposited at 550 deg. C revealed a carbon 1s binding energy of 284.4 eV. The compressive film stress was decreased from 2.95 GPa to 1.28 GPa with increasing deposition temperature. The hardness and Young's modulus of ACL deposited at 550 deg. C were 5.8 GPa and 48.7 GPa respectively. The surface roughness RMS of ACL deposited at 550 deg. C was 2.24 A, and that after cleaning in diluted HF solution (H{sub 2}O:HF = 200:1), SC1 (NH{sub 4}OH:H{sub 2}O{sub 2}:H{sub 2}O = 1:4:20) solution, and sulfuric acid solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2} = 6:1) was 2.28 A, 2.30 A and 7.34 A, respectively. The removal amount of ACL deposited at 550 deg. C in diluted HF solution, SC1 solution and sulfuric acid solution was 6 A, 36 A and 110 A, respectively. These results demonstrated the viability of ACL deposited by PECVD from C{sub 6}H{sub 12} at 550 deg. C for application as the dry etch hard mask in fabrication of semiconductor devices.

  10. Tensile-Creep Test Specimen Preparation Practices of Surface Support Liners

    Science.gov (United States)

    Guner, Dogukan; Ozturk, Hasan

    2017-12-01

    Ground support has always been considered as a challenging issue in all underground operations. Many forms of support systems and supporting techniques are available in the mining/tunnelling industry. In the last two decades, a new polymer based material, Thin Spray-on Liner (TSL), has attained a place in the market as an alternative to the current areal ground support systems. Although TSL provides numerous merits and has different application purposes, the knowledge on mechanical properties and performance of this material is still limited. In laboratory studies, since tensile rupture is the most commonly observed failure mechanism in field applications, researchers have generally studied the tensile testing of TSLs with modification of American Society for Testing and Materials (ASTM) D-638 standards. For tensile creep testing, specimen preparation process also follows the ASTM standards. Two different specimen dimension types (Type I, Type IV) are widely preferred in TSL tensile testing that conform to the related standards. Moreover, molding and die cutting are commonly used specimen preparation techniques. In literature, there is a great variability of test results due to the difference in specimen preparation techniques and practices. In this study, a ductile TSL product was tested in order to investigate the effect of both specimen preparation techniques and specimen dimensions under 7-day curing time. As a result, ultimate tensile strength, tensile yield strength, tensile modulus, and elongation at break values were obtained for 4 different test series. It is concluded that Type IV specimens have higher strength values compared to Type I specimens and moulded specimens have lower results than that of prepared by using die cutter. Moreover, specimens prepared by molding techniques have scattered test results. Type IV specimens prepared by die cutter technique are suggested for preparation of tensile test and Type I specimens prepared by die cutter technique

  11. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  12. Preparation of surface modified zinc oxide nanoparticle with high capacity dye removal ability

    International Nuclear Information System (INIS)

    Mahmoodi, Niyaz Mohammad; Najafi, Farhood

    2012-01-01

    Highlights: ► Amine-functionalized zinc oxide nanoparticle (AFZON) was synthesized. ► Isotherm and kinetics data followed Langmuir isotherm and pseudo-second order kinetic model, respectively. ► Q 0 of ZON for AB25, DR23 and DR31 was 20, 12 and 15 mg/g, respectively. ► Q 0 of AFZON for AB25, DR23 and DR31 was 1250, 1000 and 1429 mg/g, respectively. ► AFZON was regenerated at pH 12. -- Abstract: In this paper, the surface modification of zinc oxide nanoparticle (ZON) by amine functionalization was studied to prepare high capacity adsorbent. Dye removal ability of amine-functionalized zinc oxide nanoparticle (AFZON) and zinc oxide nanoparticle (ZON) was also investigated. The physical characteristics of AFZON were studied using Fourier transform infrared (FTIR), scanning electron microscopy (SEM) and X-ray diffraction (XRD). Acid Blue 25 (AB25), Direct Red 23 (DR23) and Direct Red 31 (DR31) were used as model compounds. The effect of operational parameters such as dye concentration, adsorbent dosage, pH and salt on dye removal was evaluated. The isotherm and kinetic of dye adsorption were studied. The maximum dye adsorption capacity (Q 0 ) was 20 mg/g AB25, 12 mg/g DR23 and 15 mg/g DR31 for ZON and 1250 mg/g AB25, 1000 mg/g DR23 and 1429 mg/g DR31 for AFZON. It was found that dye adsorption followed Langmuir isotherm. Adsorption kinetic of dyes was found to conform to pseudo-second order kinetics. Dye desorption tests (adsorbent regeneration) showed that the maximum dye release of 90% AB25, 86% for DR23 and 90% for DR31 were achieved in aqueous solution at pH 12. Based on the data of the present investigation, it can be concluded that the AFZON being an adsorbent with high dye adsorption capacity might be a suitable alternative to remove dyes from colored aqueous solutions.

  13. Ion implantation in semiconductor bodies

    International Nuclear Information System (INIS)

    Badawi, M.H.

    1984-01-01

    Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

  14. Surface treatment of glass substrates for the preparation of long-lived carbon stripper foils

    International Nuclear Information System (INIS)

    Takeuchi, Suehiro; Takekoshi, Eiko

    1981-02-01

    Glass substrates having uniformly distributed microscopic grains on the surfaces are useful to make long-lived carbon stripper foils for heavy ions. A method of surface treatment of glass substrates to form the surface structure is described. This method consists of precipitation of glass components, such as soda, onto the surfaces in a hot and humid atmosphere and a fogging treatment of forming microscopic grains of the precipitated substances. Some results of studies on the treatment conditions are also presented. (author)

  15. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  16. X-ray in-situ study of copper electrodeposition on UHV prepared GaAs(001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gruender, Yvonne

    2008-06-02

    For this work a unique setup for in-situ electrochemical studies was employed and improved. This setup permits UHV preparation of the GaAs(001) surface with a defined surface termination (arsenic-rich or gallium-rich) and its characterization by SXRD in UHV, under ambient pressure in inert gas and in electrolyte under potential control without passing through air. The GaAs(001) surfaces were capped by amorphous arsenic. This permitted to ship them through ambient air. Afterwards smooth well defined GaAs(001) surfaces could be recovered by thermal annealing in UHV. A first investigation of the arsenic capped sample was done by atomic force microscopy (AFM) and Surface X-Ray Diffraction (SXRD). The non bulk like termination of the arsenic buried GaAs(001) surface was revealed. For the electrochemical metal deposition, arsenic terminated (2 x 4) reconstructed and gallium terminated (4 x 2) reconstructed GaAs(001) surfaces were employed. These surfaces were characterized by STM, LEED and a first time by SXRD. The surfaces are smooth, however, a higher degree of disorder than for MBE prepared reconstructed GaAs(001) is found. After exposure of the sample to nitrogen, the surfaces were then again studied by SXRD. These two steps characterizing the bare GaAs(001) surfaces permitted us to get a better knowledge of the starting surface and its influence on the later electrodeposited copper. At ambient pressure both reconstructions are lifted, but the surface is not bulk-like terminated as can be deduced from the crystal truncation rods. Epitaxial copper clusters grow upon electrodeposition on the UHV prepared GaAs(001) surface. The copper lattice is rotated and inclined with respect to the GaAs substrate lattice, leading to eight symmetry equivalent domains. The influence of the surface termination as well as the nucleation potential on the structure of the electrodeposited copper were investigated. The tilt and rotation angles do not depend on the deposition potential but

  17. Preparation of ordered silver angular nanoparticles array in block copolymer film for surface-enhanced Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Svanda, J. [University of Chemistry and Technology, Department of Solid State Engineering (Czech Republic); Gromov, M. V. [University of Minnesota Duluth, Department of Chemistry and Biochemistry (United States); Kalachyova, Y. [University of Chemistry and Technology, Department of Solid State Engineering (Czech Republic); Postnikov, P. S. [Tomsk Polytechnic University, Department of Technology of Organic Substances and Polymer Materials (Russian Federation); Svorcik, V.; Lyutakov, O., E-mail: lyutakoo@vscht.cz [University of Chemistry and Technology, Department of Solid State Engineering (Czech Republic)

    2016-10-15

    We report a single-step method of preparation of ordered silver nanoparticles array through template-assisted nanoparticles synthesis in the semidried block copolymer film. Ordered nanoparticles were prepared on different substrates by the proper choice of solvents combination and preparation procedure. In particular, block copolymer and silver nitrate were dissolved in the mix of tetrahydrofuran, toluene, and n-methylpyrolidone. During short spin-coating procedure ordering of block copolymer, evaporation of toluene and preferential silver redistribution into poly(4-vinylpyridine) block occurred. Rapid heating of semidry film initiated silver reduction, removing of residual solvent and creation of ordered silver array. After polymer removing silver nanoparticles array was tested as a suitable candidate for subdiffraction plasmonic application–surface-enhanced Raman scattering. Enhancement factor was calculated and compared with the literature data.

  18. Preparation of Two-Layer Anion-Exchange Poly(ethersulfone Based Membrane: Effect of Surface Modification

    Directory of Open Access Journals (Sweden)

    Lucie Zarybnicka

    2016-01-01

    Full Text Available The present work deals with the surface modification of a commercial microfiltration poly(ethersulfone membrane by graft polymerization technique. Poly(styrene-co-divinylbenzene-co-4-vinylbenzylchloride surface layer was covalently attached onto the poly(ethersulfone support layer to improve the membrane electrochemical properties. Followed by amination, a two-layer anion-exchange membrane was prepared. The effect of surface layer treatment using the extraction in various solvents on membrane morphological and electrochemical characteristics was studied. The membranes were tested from the point of view of water content, ion-exchange capacity, specific resistance, permselectivity, FT-IR spectroscopy, and SEM analysis. It was found that the two-layer anion-exchange membranes after the extraction using tetrahydrofuran or toluene exhibited smooth and porous surface layer, which resulted in improved ion-exchange capacity, electrical resistance, and permselectivity of the membranes.

  19. Space-confined preparation of high surface area tungsten oxide and tungsten nitride inside the pores of mesoporous silica SBA-15

    DEFF Research Database (Denmark)

    Meyer, Simon; Beyer, Hans; Köhler, Klaus

    2015-01-01

    For the direct preparation of high surface area nitride materials, a lack of suitable precursors exists. Indirect preparation by gas phase nitridation (e.g. by ammonia) requires high temperatures and often results in sintering. The present work demonstrates that the space-confined preparation of ...

  20. Semiconductor particle mediated photoelectron transfers in bilayer lipid membranes

    International Nuclear Information System (INIS)

    Fendler, J.H.; Baral, S.

    1989-01-01

    This paper discusses semiconductor particles in situ generated on the cis surface of glyceryl monooleate (GMO) bilayer lipid membranes (BLMs), that have been used to mediate photoelectric effects. The presence of semiconductors on the BLM surface is addressed. The observed photoelectric effects are rationalized and presented

  1. Simple and convenient preparation of Au-Pt core-shell nanoparticles on surface via a seed growth method

    International Nuclear Information System (INIS)

    Qian Lei; Sha Yufang; Yang Xiurong

    2006-01-01

    Au-Pt core-shell nanoparticles were prepared on glass surface by a seed growth method. Gold nanoparticles were used as seeds and ascorbic acid-H 2 PtCl 6 solutions as growth solutions to deposit Pt shell on the surface of gold nanoparticles. These core-shell nanoparticles and their growth process were examined by UV-Vis spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy and field-emission environmental scanning electron microscopy and the results indicated that the deposition speed was fast and nanoparticles with obvious core-shell structure could be obtained after 2 min. Moreover, this seed growth method for preparation of the core-shell nanoparticles is simple and convenient compared with other seed growth methods with NH 4 OH as a mild reductant. In addition, electrochemical experiments indicated that these Au-Pt core-shell nanoparticles had similar electrochemical properties to those of the bulk Pt electrode

  2. On the structure and surface chemical composition of indium-tin oxide films prepared by long-throw magnetron sputtering

    International Nuclear Information System (INIS)

    Chuang, M.J.; Huang, H.F.; Wen, C.H.; Chu, A.K.

    2010-01-01

    Structures and surface chemical composition of indium tin oxide (ITO) thin films prepared by long-throw radio-frequency magnetron sputtering technique have been investigated. The ITO films were deposited on glass substrates using a 20 cm target-to-substrate distance in a pure argon sputtering environment. X-ray diffraction results showed that an increase in substrate temperature resulted in ITO structure evolution from amorphous to polycrystalline. Field-emission scanning electron microscopy micrographs suggested that the ITO films were free of bombardment of energetic particles since the microstructures of the films exhibited a smaller grain size and no sub-grain boundary could be observed. The surface composition of the ITO films was characterized by X-ray photoelectron spectroscopy (XPS). Oxygen atoms in both amorphous and crystalline ITO structures were observed from O 1 s XPS spectra. However, the peak of the oxygen atoms in amorphous ITO phase could only be found in samples prepared at low substrate temperatures. Its relative peak area decreased drastically when substrate temperatures were larger than 200 o C. In addition, a composition analysis from the XPS results revealed that the films deposited at low substrate temperatures contained high concentration of oxygen at the film surfaces. The oxygen-rich surfaces can be attributed to hydrolysis reactions of indium oxides, especially when large amount of the amorphous ITO were developed near the film surfaces.

  3. Preparation of poly(vinyl alcohol)/chitosan/starch blends and studies on thermal and surface properties

    Science.gov (United States)

    Nasalapure, Anand V.; Chalannavar, Raju K.; Malabadi, Ravindra B.

    2018-05-01

    Biopolymers are abundantly available from its natural sources of extraction. Chitosan(CH) is one of the widely used natural polymer which is perspective natural polysaccharide. Natural polymer blend with synthetic polymer enhances property of the material such as polyvinyl alcohol (PVA). PVA is nontoxic degradable synthetic polymer and very good film forming polymer. In this study prepared hybrid based film by adding starch into Chitosan/PVA which slighlty increased the surface and thermal property of ternary blend film.

  4. Synthesis, surface properties and photocatalytic abilities of semiconductor In{sub 2}Cu{sub 2}O{sub 5} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jian; Wan, Yingpeng; Huang, Yanlin [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Wang, Yaorong, E-mail: yrwang@suda.edu.cn [State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Qin, Lin [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of); Seo, Hyo Jin, E-mail: hjseo@pknu.ac.kr [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of)

    2016-12-15

    Highlights: • In{sub 2}Cu{sub 2}O{sub 5} has high absorption in the UV-green and red wavelength region. • The nanoparticles present efficient photocatalytsis under visible light. • The photochemical properties were elucidated on its structure properties. - Abstract: In{sub 2}Cu{sub 2}O{sub 5} photocatalyst was prepared by the sol-gel method which produced worm-like nanoparticles. The X-ray powder diffraction (XRD) measurement and Rietveld structural refinement were applied to elucidate the phase formation and structural properties. The morphological properties of the surfaces were measured by scanning electron microscope (SEM), energy dispersive spectrum (EDS), and transmission electron microscopy (TEM). The nanoparticles present optical absorption from both the host lattices and the d–d transitions of distorted Cu{sup 2+} octahedra in UV–vis light wavelength region. The band-gap of In{sub 2}Cu{sub 2}O{sub 5} photocatalyst is about 2.31 eV. The photocatalytic abilities of In{sub 2}Cu{sub 2}O{sub 5} nanoparticles were verified by photo-degradation of methylene blue (MB) solutions irradiated by visible light. The energy potential and bad structure were discussed. In{sub 2}Cu{sub 2}O{sub 5} nanoparticles have the potential application for the efficient photocatalysis on MB dye solutions.

  5. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  6. Damage free Ar ion plasma surface treatment on In{sub 0.53}Ga{sub 0.47}As-on-silicon metal-oxide-semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Koh, Donghyi; Shin, Seung Heon; Ahn, Jaehyun; Sonde, Sushant; Banerjee, Sanjay K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas 78758 (United States); Kwon, Hyuk-Min [SK Hynix, Icheon, 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do 136-1 (Korea, Republic of); Orzali, Tommaso; Kim, Tae-Woo, E-mail: twkim78@gmail.com [SEMATECH Inc., 257 Fuller Rd #2200, Albany, New York 12203 (United States); Kim, Dae-Hyun [Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu 702-701 (Korea, Republic of)

    2015-11-02

    In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In{sub 0.53}Ga{sub 0.47}As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In{sub 0.53}Ga{sub 0.47}As. The XPS spectra of Ar treated In{sub 0.53}Ga{sub 0.47}As show a decrease in the AsO{sub x} and GaO{sub x} signal intensities, and the MOSCAPs show higher accumulation capacitance (C{sub acc}), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (D{sub it}), which thereby led to a reduction in the threshold voltage (V{sub th}) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.

  7. On the use of the plasma in III-V semiconductor processing

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, G.; Capezzuto, P.; Losurdo, M. [C.N.R.-Centro di Studio per la Chimica dei Plasmi Dipartimento di Chimica-Universita di Bari via Orabona, 4-70126 Bari (Italy)

    1996-03-01

    The manufacture of usable devices based on III-V semiconductor materials is a complex process requiring epilayer growth, anisotropic etching, defect passivation, surface oxidation and substrate preparation processes. The combination of plasma based methods with metalorganic chemical vapor deposition (MOCVD) offers some real advantages: {ital in} {ital situ} production and preactivation of PH{sub 3} and sample preparation using H-atom. The detailed understanding and use of the plasma (using mass spectrometry, optical emission spectroscopy, laser reflectance interferometry and spectroscopic ellipsometry) as applied to InP material is discussed. {copyright} {ital 1996 American Institute of Physics.}

  8. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  9. In situ preparation of biomimetic thin films and their surface-shielding effect for organisms in high vacuum.

    Directory of Open Access Journals (Sweden)

    Hiroshi Suzuki

    Full Text Available Self-standing biocompatible films have yet to be prepared by physical or chemical vapor deposition assisted by plasma polymerization because gaseous monomers have thus far been used to create only polymer membranes. Using a nongaseous monomer, we previously found a simple fabrication method for a free-standing thin film prepared from solution by plasma polymerization, and a nano-suit made by polyoxyethylene (20 sorbitan monolaurate can render multicellular organisms highly tolerant to high vacuum. Here we report thin films prepared by plasma polymerization from various monomer solutions. The films had a flat surface at the irradiated site and were similar to films produced by vapor deposition of gaseous monomers. However, they also exhibited unique characteristics, such as a pinhole-free surface, transparency, solvent stability, flexibility, and a unique out-of-plane molecular density gradient from the irradiated to the unirradiated surface of the film. Additionally, covering mosquito larvae with the films protected the shape of the organism and kept them alive under the high vacuum conditions in a field emission-scanning electron microscope. Our method will be useful for numerous applications, particularly in the biological sciences.

  10. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  11. Surface Reconstruction for Preparation of Plasmonic Au/TiO₂ Nanoparticle with Perfect Hetero Interface and Improved Photocatalytic Capacity.

    Science.gov (United States)

    Yuan, Guoqiu; Ping, Chen; Zhao, Qin; Cao, Min; Jin, Yonglong; Ge, Cunwang

    2018-07-01

    The photocatalytic activity of plasmonic Au/TiO2 nanoparticles (NPs) is dependent on distances between Au and TiO2. The preparation of plasmonic NPs is still a challenge because of an inherent lattice mismatch on heterogeneous interfaces. The combination between Au and TiO2 NPs often exhibits physical adsorption, which affect block the electron transferring process by photo-induction from TiO2 to Au NPs and weaken the photocatalytic activity. In this work an approach for preparing plasmonic Au/TiO2 NPs with perfect hetero-interface was proposed based on reconstruction of anatase TiO2 with (101) surface and in-situ reduction of Au NPs. Under UV-irradiation, anatase TiO2 NPs with a high percentage of (001) facets in formaldehyde solution undergo photochemical reactions to reconstruct the (101) surface of TiO2 and simultaneously allow polyformaldehyde to absorb on the same surface. Thus, Au(OH)-4 ions could be adsorbed on the (101) surfaces of TiO2 through electrostatic adsorption and reduced to form nano-Au in situ after recrystallization at 180 °C. The high-resolution transmission electron microscopy (HRTEM) images showed clear nanoscale lattice transition on heterogeneous interfaces of Au/TiO2 NPs. The surface structure of TiO2 NPs and the growth mechanism of Au/TiO2 NPs were evaluated with HRTEM, X-ray photoelectron spectra (XPS) and Fourier transform infrared spectroscopy (FTIR). It was demonstrated that the as-prepared plasmonic Au/TiO2 NPs had higher photocatalytic activity and corrosion resistance in comparison with primary TiO2 NPs by photo-electrochemical measurements. The reinforcing mechanism could be interpreted with Mott-Schottky analysis in terms of quantum mechanics. Our study implied that the reconstruction based synthesis may open up more opportunities to obtain lattice-mismatch nanomaterials for photocatalysis.

  12. Preparation of protein- and cell-resistant surfaces by hyperthermal hydrogen induced cross-linking of poly(ethylene oxide).

    Science.gov (United States)

    Bonduelle, Colin V; Lau, Woon M; Gillies, Elizabeth R

    2011-05-01

    The functionalization of surfaces with poly(ethylene oxide) (PEO) is an effective means of imparting resistance to the adsorption of proteins and the attachment and growth of cells, properties that are critical for many biomedical applications. In this work, a new hyperthermal hydrogen induced cross-linking (HHIC) method was explored as a simple one-step approach for attaching PEO to surfaces through the selective cleavage of C-H bonds and subsequent cross-linking of the resulting carbon radicals. In order to study the effects of the process on the polymer, PEO-coated silicon wafers were prepared and the effects of different treatment times were investigated. Subsequently, using an optimized treatment time and a modified butyl polymer with increased affinity for PEO, the technique was applied to butyl rubber surfaces. All of the treated surfaces exhibited significantly reduced protein adsorption and cell growth relative to control surfaces and compared favorably with surfaces that were functionalized with PEO using conventional chemical methods. Thus HHIC is a simple and effective means of attaching PEO to non-functional polymer surfaces.

  13. Effects of acid and alkaline based surface preparations on spray deposited cerium based conversion coatings on Al 2024-T3

    Energy Technology Data Exchange (ETDEWEB)

    Pinc, W. [Department of Materials Science Engineering, Materials Research Center, Missouri University of Science and Technology, Rolla, MO 65409 (United States)], E-mail: wrphw5@mst.edu; Geng, S.; O' Keefe, M.; Fahrenholtz, W.; O' Keefe, T. [Department of Materials Science Engineering, Materials Research Center, Missouri University of Science and Technology, Rolla, MO 65409 (United States)

    2009-01-15

    Cerium based conversion coatings were spray deposited on Al 2024-T3 and characterized to determine the effect of surface preparation on the deposition rate and surface morphology. It was found that activation of the panel using a 1-wt.% sulfuric acid solution increased the coating deposition rate compared to alkaline cleaning alone. Analysis of the surface morphology of the coatings showed that the coatings deposited on the acid treated panels exhibited fewer visible cracks compared to coatings on alkaline cleaned panels. Auger electron spectroscopy depth profiling showed that the acid activation decreased the thickness of the aluminum oxide layer and the concentration of magnesium on the surface of the panels compared to the alkaline treatment. Additionally, acid activation increased the copper concentration at the surface of the aluminum substrate. Based on the results, the acid based surface treatment appeared to expose copper rich intermetallics, thus increasing the number of cathodic sites on the surface, which led to an overall increase in the deposition rate.

  14. Semiconductor plasmonic crystals: active control of THz extinction

    International Nuclear Information System (INIS)

    Schaafsma, M C; Rivas, J Gómez

    2013-01-01

    We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers. (invited article)

  15. Skin and surface lead contamination, hygiene programs, and work practices of bridge surface preparation and painting contractors.

    Science.gov (United States)

    Virji, M Abbas; Woskie, Susan R; Pepper, Lewis D

    2009-02-01

    A 2005 regulatory review of the lead in construction standard by the Occupational Safety and Health Administration (OSHA) noted that alternative pathways of exposure can be as significant as inhalation exposure and that noncompliance with the standard pertaining to hygiene facilities and practices was the second most commonly violated section of the standard. Noncompliance with provisions of the standard and unhealthy work and hygiene practices likely increase the likelihood of take-home lead via contaminated clothing, automobiles, and skin, thus contributing to elevated blood lead levels (BLL) among construction workers and their family members. We performed a cross-sectional study of bridge painters working for small contractors in Massachusetts to investigate causes of persistent elevated BLLs and to assess lead exposures. Thirteen work sites were evaluated for a 2-week period during which surface and skin wipe samples were collected and qualitative information was obtained on personal hygiene practices, decontamination and hand wash facilities, and respiratory protection programs. Results showed lead contamination on workers' skin, respirators, personal automobiles, and the decontamination unit, indicating a significant potential for take-home lead exposure. Overall, the geometric mean (GM) skin lead levels ranged from 373 microg on workers' faces at end of shift to 814 microg on hands at break time. The overall GM lead level inside respirators was 143 microg before work and 286 microg after work. Lead contamination was also present inside workers' personal vehicles as well as on surfaces inside the clean side of the decontamination unit. Review of the respiratory protection programs, work site decontamination and hand wash facilities, and personal hygiene practices indicated that these factors had significant impact on skin and surface contamination levels and identified significant opportunities for improving work site facilities and personal practices

  16. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  17. Surface preparation effects on efficient indium-tin-oxide-CdTe and CdS-CdTe heterojunction solar cells

    Science.gov (United States)

    Werthen, J. G.; Fahrenbruch, A. L.; Bube, R. H.; Zesch, J. C.

    1983-05-01

    The effects of CdTe surface preparation and subsequent junction formation have been investigated through characterization of ITO/CdTe and CdS/CdTe heterojunction solar cells formed by electron beam evaporation of indium-tin-oxide (ITO) and CdS onto single crystal p-type CdTe. Surfaces investigated include air-cleaved (110) surfaces, bromine-in-methanol etched (110) and (111) surfaces, and teh latter surfaces subjected to a hydrogen heat treatment. Both air-cleaved and hydrogen heat treated surfaces have a stoichiometric Cd to Te ratio. The ITO/CdTe junction formation process involves an air heat treatment, which ahs serious effects on the behavior of junctions formed on these surfaces. Etched surfaces which have a large excesss of Te, are less affected by the junction formation process and result in ITO/CdTe heterojunctions with solar efficiencies of 9% (Vsc =20 mA/cm2). Use of low-doped CdTe results in junctions characterized by considerably larger open-circuit votages (Voc =0.81 V) which are attributable to increasing diode factors caused by a shift from interfacial recombination to recombination in the depletion region. Resulting solar efficiencies reach 10.5% which is the highest value reported to date for a genuine CdTe heterojunction, CdS/CdTe heterojunctions show a strong dependence on CdTe surface condition, but less influence on the junction formation process. Solar efficiencies of 7.5% on an etched and heat treated surface are observed. All of these ITO/CdTe and CdS/CdTe heterojunctions have been stable for at least 10 months.

  18. A novel method to prepare superhydrophobic, UV resistance and anti-corrosion steel surface

    KAUST Repository

    Isimjan, Tayirjan T.; Wang, Taoye; Rohani, Sohrab M F

    2012-01-01

    . The resulting surfaces were modified by the low free energy chemical PTES (1H,1H,2H,2H-Perfluorodecyltriethoxysilane). The experimental results of wettability exhibit that such modified surfaces have a strong repulsive force to water droplets, their static

  19. Facile method for preparing superoleophobic surfaces with hierarchical microcubic/nanowire structures

    Science.gov (United States)

    Kwak, Wonshik; Hwang, Woonbong

    2016-02-01

    To facilitate the fabrication of superoleophobic surfaces having hierarchical microcubic/nanowire structures (HMNS), even for low surface tension liquids including octane (surface tension = 21.1 mN m-1), and to understand the influences of surface structures on the oleophobicity, we developed a convenient method to achieve superoleophobic surfaces on aluminum substrates using chemical acid etching, anodization and fluorination treatment. The liquid repellency of the structured surface was validated through observable experimental results the contact and sliding angle measurements. The etching condition required to ensure high surface roughness was established, and an optimal anodizing condition was determined, as a critical parameter in building the superoleophobicity. The microcubic structures formed by acid etching are essential for achieving the formation of the hierarchical structure, and therefore, the nanowire structures formed by anodization lead to an enhancement of the superoleophobicity for low surface tension liquids. Under optimized morphology by microcubic/nanowire structures with fluorination treatment, the contact angle over 150° and the sliding angle less than 10° are achieved even for octane.

  20. A novel method to prepare superhydrophobic, UV resistance and anti-corrosion steel surface

    KAUST Repository

    Isimjan, Tayirjan T.

    2012-11-01

    Both TiO 2 and SiO 2 coated steel surfaces containing micro- and nanoscale binary structures with different surface roughness were successfully fabricated by means of a facile layer by layer deposition process followed by heat treatment. The resulting surfaces were modified by the low free energy chemical PTES (1H,1H,2H,2H-Perfluorodecyltriethoxysilane). The experimental results of wettability exhibit that such modified surfaces have a strong repulsive force to water droplets, their static contact angles exceed 165°, receding angle>160°, advanced angles>170° and slide angle<1°. The resulting surfaces not only exhibit superhydrophobic properties but also show strong UV resistance (after coating SiO 2 on top of TiO 2) and strong stability to various solvents including 0.01% HCl solution. © 2012 Elsevier B.V.

  1. Preparation of self-organized porous anodic niobium oxide microcones and their surface wettability

    International Nuclear Information System (INIS)

    Oikawa, Y.; Minami, T.; Mayama, H.; Tsujii, K.; Fushimi, K.; Aoki, Y.; Skeldon, P.; Thompson, G.E.; Habazaki, H.

    2009-01-01

    Porous anodic niobium oxide with a pore size of ∼10 nm was formed at 10 V in glycerol electrolyte containing 0.6 mol dm -3 K 2 HPO 4 and 0.2 mol dm -3 K 3 PO 4 at 433 K. After prolonged anodizing for 5.4 ks, niobium oxide microcones develop on the surface. X-ray diffraction patterns of the anodized specimens revealed that the initially formed anodic oxide is amorphous, but an amorphous-to-crystalline transition occurs during anodizing. As a consequence of the preferential chemical dissolution of the initially formed amorphous oxide, due to different solubility of the amorphous and crystalline oxides, crystalline oxide microcones appear on the film surface after prolonged anodizing. The surface is superhydrophilic. After coating with fluorinated alkylsilane, the surface becomes superhydrophobic with a contact angle of 158 o for water. The surface is also oil repellent, with a contact angle as high as 140 o for salad oil.

  2. Method for depositing high-quality microcrystalline semiconductor materials

    Science.gov (United States)

    Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  3. Preparation of High Surface Area Activated Carbon from Spent Phenolic Resin by Microwave Heating and KOH Activation

    Science.gov (United States)

    Cheng, Song; Zhang, Libo; Zhang, Shengzhou; Xia, Hongying; Peng, Jinhui

    2018-01-01

    The spent phenolic resin is as raw material for preparing high surface area activated carbon (HSAAC) by microwave-assisted KOH activation. The effects of microwave power, activation duration and impregnation ratio (IR) on the iodine adsorption capability and yield of HSAAC were investigated. The surface characteristics of HSAAC were characterized by nitrogen adsorption isotherms, FTIR, SEM and TEM. The operating variables were optimized utilizing the response surface methodology (RSM) and were identified to be microwave power of 700 W, activation duration of 15 min and IR of 4, corresponding to a yield of 51.25 % and an iodine number of 2,384 mg/g. The pore structure parameters of the HSAAC, i. e., Brunauer-Emmett-Teller (BET) surface area, total pore volume, and average pore diameter were estimated to be 4,269 m2/g, 2.396 ml/g and 2.25 nm, respectively, under optimum conditions. The findings strongly support the feasibility of microwave-assisted KOH activation for preparation of HSAAC from spent phenolic resin.

  4. Cobalt(II phthalocyanine bonded to 3-n-propylimidazole immobilized on silica gel surface: preparation and electrochemical properties

    Directory of Open Access Journals (Sweden)

    Fujiwara Sergio T.

    1999-01-01

    Full Text Available Co-Phthalocyanine complex was immobilized on 3-n-propylimidazole groups grafted on a porous SiO2 surface (specific surface area S BET = 500 m² g-1 and efficiently electrocatalyzed the oxalic acid oxidation on a carbon paste electrode surface made of this material. Intermolecular interactions of the complex species which can normally interfere in the redox process practically are not observed in the present case because of a low average surface density, delta = 4.7 x 10-13 mol cm-2 (delta = Nf/S BET, where Nf is the amount of adsorbed Co-phtalocyanine per gram of modified silica gel of the complex species material prepared. The linear response of the electrode to oxalic acid concentration, between 6.5 x 10-4 and 3.2 x 10-3 mol L-1, associated with its high chemical stability makes the covalently immobilized Co-phtalocyanine complex material very attractive in preparing a new class of chemical sensors.

  5. Preparation and controlled drug delivery applications of mesoporous silica polymer nanocomposites through the visible light induced surface-initiated ATRP

    Science.gov (United States)

    Huang, Long; Liu, Meiying; Mao, Liucheng; Xu, Dazhuang; Wan, Qing; Zeng, Guangjian; Shi, Yingge; Wen, Yuanqing; Zhang, Xiaoyong; Wei, Yen

    2017-08-01

    The mesoporous materials with large pore size, high specific surface area and high thermal stability have been widely utilized in a variety of fields ranging from environmental remediation to separation and biomedicine. However, surface modification of these silica nanomaterials is required to endow novel properties and achieve better performance for most of these applications. In this work, a new method has been established for surface modification of mesoporous silica nanoparticles (MSNs) that relied on the visible light induced atom transfer radical polymerization (ATRP). In the procedure, the copolymers composited with itaconic acid (IA) and poly(ethylene glycol)methyl acrylate (PEGMA) were grafted from MSNs using IA and PEGMA as the monomers and 10-Phenylphenothiazine(PTH) as the organic catalyst. The successful preparation of final polymer nanocomposites (named as MSNs-NH2-poly(IA-co-PEGMA)) were evidenced by a series of characterization techniques. More importantly, the anticancer agent cisplatin can be effectively loaded on MSNs-NH2-poly(IA-co-PEGMA) and controlled release it from the drug-loading composites with pH responsive behavior. As compared with conventional ATRP, the light induced surface-initiated ATRP could also be utilized for preparation of various silica polymer nanocomposites under rather benign conditions (e.g. absent of transition metal ions, low polymerization temperature and short polymerization time). Taken together, we have developed a rather promising strategy method for fabrication of multifunctional MSNs-NH2-poly(IA-co-PEGMA) with great potential for biomedical applications.

  6. Fabrication and characterisation of selective solar absorber surfaces prepared by sol-gel technique

    CSIR Research Space (South Africa)

    Katumba, G

    2006-07-01

    Full Text Available characterization: The near normal spectral hemispherical reflect- ance, R, of the prepared samples was measured in the wavelength interval 0.3 to 20.0 μm1 using a Lambda 900 spec- trophotometer and a Bomem-Michel- son 110 FTIR spectrometer. Solar ab...

  7. Surface preparation of TiO2 anatase (101): Pitfalls and how to avoid them

    Czech Academy of Sciences Publication Activity Database

    Setvín, M.; Daniel, B.; Mansfeldová, Věra; Kavan, Ladislav; Scheiber, P.; Fidler, M.; Schmid, M.; Diebold, U.

    2014-01-01

    Roč. 626, AUG 2014 (2014), s. 61-67 ISSN 0039-6028 R&D Projects: GA ČR GA13-07724S Grant - others: COST (XE) CM1104 Institutional support: RVO:61388955 Keywords : TiO2 * anatase * sample preparation Subject RIV: CG - Electrochemistry Impact factor: 1.925, year: 2014

  8. Verification of the effect of surface preparation on Hot Isostatic Pressing diffusion bonding joints of CLAM steel

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yanyun [University of Science and Technology of China, Hefei, Anhui 230027 (China); Institute of Nuclear Energy Safety Technology, Chinese Academy of Sciences, Hefei, Anhui 230031 (China); Li, Chunjing, E-mail: chunjing.li@fds.org.cn [Institute of Nuclear Energy Safety Technology, Chinese Academy of Sciences, Hefei, Anhui 230031 (China); Huang, Bo; Liu, Shaojun [Institute of Nuclear Energy Safety Technology, Chinese Academy of Sciences, Hefei, Anhui 230031 (China); Huang, Qunying [University of Science and Technology of China, Hefei, Anhui 230027 (China); Institute of Nuclear Energy Safety Technology, Chinese Academy of Sciences, Hefei, Anhui 230031 (China)

    2014-12-15

    Hot Isostatic Pressing (HIP) diffusion bonding with CLAM steel is the primary candidate fabrication technique for the first wall (FW) of DFLL-TBM. Surface state is one of the key factors for the joints quality. The effect of surface state prepared with grinder and miller on HIP diffusion bonding joints of CLAM steel was investigated. HIP diffusion bonding was performed at 140 MPa and 1373 K within 3 h. The mechanical properties of the joints were investigated with instrumented Charpy V-notch impact tests and the microstructures of the joints were analyzed with scanning electron microscopy (SEM). The results showed that the milled samples with fine surface roughness were more suitable for CLAM steel HIP diffusion bonding.

  9. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  10. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  11. Modification of the surface energy in isovalent nano-oxides prepared by chemical synthesis

    International Nuclear Information System (INIS)

    Miagava, J.; Gouvea, D.

    2011-01-01

    The phase stability of the nano-oxides depends on the bulk energy but it also depends on the surface energy. The difference of surface energy of the rutile and anatase phases result in a change of phase stability: TiO_2 without additives is stable as anatase when particles have nanometric size and a high specific surface area whereas rutile is stable when particles are larger. But this stability can be modified through the use of additives. Different studies demonstrate that additives segregate on the particle surface modifying the surface energy. In this work (1-X)TiO_2-XSnO_2 powders were synthesized by the polymeric precursor method with concentrations of 0 ≤ X ≤ 1. The specific surface area measurements demonstrate that the modification of the composition change the specific surface areas and it reaches a maximum at X = 0.005. The Raman spectroscopy demonstrates that a modification on the stability of the TiO_2 polymorphs occurs and the phase rutile is stabilized when SnO_2 is added to the nano powders.(author)

  12. One-pot reaction for the preparation of biofunctionalized self-assembled monolayers on gold surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Raigoza, Annette F.; Fies, Whitney; Lim, Amber; Onyirioha, Kristeen; Webb, Lauren J., E-mail: lwebb@cm.utexas.edu

    2017-02-01

    Highlights: • One-pot synthesis of α-helical-terminated self-assembled monolayers on Au(111). • Synthesis of high density, structured, and covalently bound α-helices on Au(111). • Characterization by surface-averaged and single molecule techniques. • Peptide-terminated surfaces for fabrication of biomaterials and sensors. - Abstract: The Huisgen cycloaddition reaction (“click” chemistry) has been used extensively to functionalize surfaces with macromolecules in a straightforward manner. We have previously developed a procedure using the copper(I)-catalyzed click reaction to tether synthetic α-helical peptides carrying two alkyne groups to a well-ordered azide-terminated alkanethiol self-assembled monolayer (SAM) on a Au(111) surface. While convenient, click-based strategies potentially pose significant problems from reagents, solvents, and reaction temperatures that may irreversibly damage some molecules or substrates. Tuning click chemistry conditions would allow individual optimization of reaction conditions for a wide variety of biomolecules and substrate materials. Here, we explore the utility of simultaneous SAM formation and peptide-attachment chemistry in a one-pot reaction. We demonstrate that a formerly multistep reaction can be successfully carried out concurrently by mixing azide-terminated alkanethiols, CuCl, and a propargylglycine-containing peptide over a bare gold surface in ethanol and reacting at 70 °C. X-ray photoelectron spectroscopy (XPS), surface infrared spectroscopy, surface circular dichroic (CD) spectroscopy, and scanning tunneling microscopy (STM) were used to determine that this one-pot reaction strategy resulted in a high density of surface-bound α-helices without aggregation. This work demonstrates the simplicity and versatility of a SAM-plus-click chemistry strategy for functionalizing Au surfaces with structured biomolecules.

  13. Preparation and Evaluation of Some Surface Active Sequestering Agents for Some Heavy Metals

    International Nuclear Information System (INIS)

    Badawi, A.M.; Mohamed, M.Z.; Mohamed, A.S.; Khowdry, M.M.; Bastway, A.F.

    2004-01-01

    A novel series of chelating agents has been synthesized by the reaction of ethylenediaminetetraacetic acid, citric acid and polyethylene glycol with different molecular weights and different number of moles. The unique structural features of these surfactants have been confirmed by FTIR spectra, elemental analysis and H 1 NMR spectrum. These surfactants exhibit excellent properties in sequestering heavy metal such as copper, lead and mercury. They show good surfactant properties, including surface tension, effectiveness, efficiency and emulsifying power. Critical micelle concentration, maximum surface excess and minimum surface area have been studied. Free energy of micellization and adsorption have been calculated

  14. Acid/base bifunctional carbonaceous nanomaterial with large surface area: Preparation, characterization, and adsorption properties for cationic and anionic compounds

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kai; Ma, Chun–Fang; Ling, Yuan; Li, Meng [Department of Chemistry, Faculty of Material Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Gao, Qiang, E-mail: gaoqiang@cug.edu.cn [Department of Chemistry, Faculty of Material Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geo Materials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Luo, Wen–Jun, E-mail: heartnohome@yahoo.com.cn [Department of Chemistry, Faculty of Material Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

    2015-07-15

    Nanostructured carbonaceous materials are extremely important in the nano field, yet developing simple, mild, and “green” methods that can make such materials possess large surface area and rich functional groups on their surfaces still remains a considerable challenge. Herein, a one-pot and environment-friendly method, i.e., thermal treatment (180 °C; 18 h) of water mixed with glucose and chitosan (CTS), has been proposed. The resultant carbonaceous nanomaterials were characterized by field emitting scanning electron microscope, N{sub 2} adsorption/desorption, Fourier transform infrared spectroscope, X-ray photoelectron spectroscopy, and zeta-potential analysis. It was found that, in contrast to the conventional hydrothermally carbonized product from pure glucose, with low surface area (9.3 m{sup 2} g{sup −1}) and pore volume (0.016 cm{sup 3} g{sup −1}), the CTS-added carbonaceous products showed satisfactory textural parameters (surface area and pore volume up to 254 m{sup 2} g{sup −1} and 0.701 cm{sup 3} g{sup −1}, respectively). Moreover, it was also interestingly found that these CTS-added carbonaceous products possessed both acidic (–COOH) and basic (–NH{sub 2}) groups on their surfaces. Taking the advantages of large surface area and –COOH/–NH{sub 2} bifunctional surface, the carbonaceous nanomaterials exhibited excellent performance for adsorptions of cationic compound (i.e., methylene blue) at pH 10 and anionic compound (i.e., acid red 18) at pH 2, respectively. This work not only provides a simple and green route to prepare acid/base bifunctional carbonaceous nanomaterials with large surface area but also well demonstrates their potential for application in adsorption. - Highlights: • A simple and green method was proposed to prepare carbon nanomaterials. • The carbon product showed acid/base bifunctional surface with large surface area. • The carbon material could efficiently adsorb both cationic and anionic compounds.

  15. Do European Standard Disinfectant tests truly simulate in-use microbial and organic soiling conditions on food preparation surfaces?

    Science.gov (United States)

    Meyer, B; Morin, V N; Rödger, H-J; Holah, J; Bird, C

    2010-04-01

    The results from European standard disinfectant tests are used as one basis to approve the use of disinfectants in Europe. The design of these laboratory-based tests should thus simulate as closely as possible the practical conditions and challenges that the disinfectants would encounter in use. No evidence is available that the organic and microbial loading in these tests simulates actual levels in the food service sector. Total organic carbon (TOC) and total viable count (TVC) were determined on 17 visibly clean and 45 visibly dirty surfaces in two restaurants and the food preparation surfaces of a large retail store. These values were compared to reference values recovered from surfaces soiled with the organic and microbial loading, following the standard conditions of the European Surface Test for bactericidal efficacy, EN 13697. The TOC reference values for clean and dirty conditions were higher than the data from practice, but cannot be regarded as statistical outliers. This was considered as a conservative assessment; however, as additional nine TOC samples from visibly dirty surfaces were discarded from the analysis, as their loading made them impossible to process. Similarly, the recovery of test organisms from surfaces contaminated according to EN 13697 was higher than the TVC from visibly dirty surfaces in practice; though they could not be regarded as statistical outliers of the whole data field. No correlation was found between TVC and TOC in the sampled data, which re-emphasizes the potential presence of micro-organisms on visibly clean surfaces and thus the need for the same degree of disinfection as visibly dirty surfaces. The organic soil and the microbial burden used in EN disinfectant standards represent a realistic worst-case scenario for disinfectants used in the food service and food-processing areas.

  16. Preparation of enhanced hydrophobic poly(L-lactide-co-ε-caprolactone) films surface and its blood compatibility

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seung Il; Lim, Jin Ik; Jung, Youngmee; Mun, Cho Hay [Division of Life and Health Science, Biomaterials Research Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Kim, Ji Heung, E-mail: kimjh@skku.edu [Department of Chemical Engineering, Polymer Technology Institute, Sungkyunkwan University, Suwon, Kyunggi (Korea, Republic of); Kim, Soo Hyun, E-mail: soohkim@kist.re.kr [Division of Life and Health Science, Biomaterials Research Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul (Korea, Republic of)

    2013-07-01

    Hydrophobicity-enhanced poly(L-lactide-co-ε-caprolactone) (PLCL) (50:50) films were cast by using the solvent–nonsolvent casting method. PLCL (50:50) was synthesized by the well-known random copolymerization process and confirmed by {sup 1}H NMR analysis. The molecular weight of the synthesized PLCL was measured by gel permeation chromatography (GPC). Number-average (Mn), weight-average (Mw) molecular weights and polydispersity (Mw/Mn) were 7 × 10{sup 4}, 1.2 × 10{sup 5}, and 1.7, respectively. PLCL films were cast in vacuum condition with various nonsolvents and nonsolvent ratios. Tetrahydrofuran (THF) was used as the solvent and three different alcohols were used as the nonsolvent: methanol, ethanol, and isopropyl alcohol (IPA). Surface hydrophobicity was confirmed by water contact angle. The water contact angle was increased from 81° ± 2° to 107° ± 2°. Water contact angle was influenced by surface porosity and topography. The prepared film surfaces were characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The change of crystalline property was characterized by X-ray diffraction (XRD). Platelet adhesion tests on the modified PLCL film surfaces were evaluated by platelet-rich plasma (PRP). The modified film surface exhibited enhanced hydrophobicity and reduced platelet adhesion ratio depending on the surface topography. One of the candidate products proposed as a potential blood compatible material showed a markedly reduced platelet adhesion property.

  17. Gold cleaning methods for preparation of cell culture surfaces for self-assembled monolayers of zwitterionic oligopeptides.

    Science.gov (United States)

    Enomoto, Junko; Kageyama, Tatsuto; Myasnikova, Dina; Onishi, Kisaki; Kobayashi, Yuka; Taruno, Yoko; Kanai, Takahiro; Fukuda, Junji

    2018-05-01

    Self-assembled monolayers (SAMs) have been used to elucidate interactions between cells and material surface chemistry. Gold surfaces modified with oligopeptide SAMs exhibit several unique characteristics, such as cell-repulsive surfaces, micropatterns of cell adhesion and non-adhesion regions for control over cell microenvironments, and dynamic release of cells upon external stimuli under culture conditions. However, basic procedures for the preparation of oligopeptide SAMs, including appropriate cleaning methods of the gold surface before modification, have not been fully established. Because gold surfaces are readily contaminated with organic compounds in the air, cleaning methods may be critical for SAM formation. In this study, we examined the effects of four gold cleaning methods: dilute aqua regia, an ozone water, atmospheric plasma, and UV irradiation. Among the methods, UV irradiation most significantly improved the formation of oligopeptide SAMs in terms of repulsion of cells on the surfaces. We fabricated an apparatus with a UV light source, a rotation table, and HEPA filter, to treat a number of gold substrates simultaneously. Furthermore, UV-cleaned gold substrates were capable of detaching cell sheets without serious cell injury. This may potentially provide a stable and robust approach to oligopeptide SAM-based experiments for biomedical studies. Copyright © 2017 The Society for Biotechnology, Japan. Published by Elsevier B.V. All rights reserved.

  18. Examining factors that influence the effectiveness of cleaning antineoplastic drugs from drug preparation surfaces: a pilot study.

    Science.gov (United States)

    Hon, Chun-Yip; Chua, Prescillia Ps; Danyluk, Quinn; Astrakianakis, George

    2014-06-01

    Occupational exposure to antineoplastic drugs has been documented to result in various adverse health effects. Despite the implementation of control measures to minimize exposure, detectable levels of drug residual are still found on hospital work surfaces. Cleaning these surfaces is considered as one means to minimize the exposure potential. However, there are no consistent guiding principles related to cleaning of contaminated surfaces resulting in hospitals to adopt varying practices. As such, this pilot study sought to evaluate current cleaning protocols and identify those factors that were most effective in reducing contamination on drug preparation surfaces. Three cleaning variables were examined: (1) type of cleaning agent (CaviCide®, Phenokil II™, bleach and chlorhexidine), (2) application method of cleaning agent (directly onto surface or indirectly onto a wipe) and (3) use of isopropyl alcohol after cleaning agent application. Known concentrations of antineoplastic drugs (either methotrexate or cyclophosphamide) were placed on a stainless steel swatch and then, systematically, each of the three cleaning variables was tested. Surface wipes were collected and quantified using high-performance liquid chromatography-tandem mass spectrometry to determine the percent residual of drug remaining (with 100% being complete elimination of the drug). No one single cleaning agent proved to be effective in completely eliminating all drug contamination. The method of application had minimal effect on the amount of drug residual. In general, application of isopropyl alcohol after the use of cleaning agent further reduced the level of drug contamination although measureable levels of drug were still found in some cases.

  19. The preparation, surface structure, zeta potential, surface charge density and photocatalytic activity of TiO2 nanostructures of different shapes

    International Nuclear Information System (INIS)

    Grover, Inderpreet Singh; Singh, Satnam; Pal, Bonamali

    2013-01-01

    Titania based nanocatalysts such as sodium titanates of different morphology having superior surface properties are getting wide importance in photocatalysis research. Despite having sodium (Na) contents and its high temperature synthesis (that generally deteriorate the photoreactivity), these Na-titanates often exhibit better photoactivity than P25-TiO 2 catalyst. Hence, this work demonstrated the influence of crystal structure, BET surface area, surface charge, zeta potential (ζ) and metal loading on the photocatalytic activity of as-prepared sodium titanate nanotube (TNT) and titania nanorod (TNR). Straw like hollow orthorhombic-TNT (Na 2 Ti 2 O 5 ·H 2 O) particles (W = 9–12 nm and L = 82–115 nm) and rice like pure anatase-TNR particles (W = 8–13 nm and L = 81–134 nm) are obtained by the hydrothermal treatment of P25-TiO 2 with NaOH, which in fact, altered the net surface charge of TNT and TNR particles. The observed ζ = −2.82 (P25-TiO 2 ), −13.5 (TNT) and −22.5 mV (TNR) are significantly altered by the Ag and Cu deposition. It has been found here that TNT displayed best photocatalytic activity for the imidacloprid insecticide (C 9 H 10 ClN 5 O 2 ) degradation to CO 2 formation under UV irradiation because of its largest surface area 176 m 2 g −1 among the catalysts studied.

  20. The preparation, surface structure, zeta potential, surface charge density and photocatalytic activity of TiO2 nanostructures of different shapes

    Science.gov (United States)

    Grover, Inderpreet Singh; Singh, Satnam; Pal, Bonamali

    2013-09-01

    Titania based nanocatalysts such as sodium titanates of different morphology having superior surface properties are getting wide importance in photocatalysis research. Despite having sodium (Na) contents and its high temperature synthesis (that generally deteriorate the photoreactivity), these Na-titanates often exhibit better photoactivity than P25-TiO2 catalyst. Hence, this work demonstrated the influence of crystal structure, BET surface area, surface charge, zeta potential (ζ) and metal loading on the photocatalytic activity of as-prepared sodium titanate nanotube (TNT) and titania nanorod (TNR). Straw like hollow orthorhombic-TNT (Na2Ti2O5·H2O) particles (W = 9-12 nm and L = 82-115 nm) and rice like pure anatase-TNR particles (W = 8-13 nm and L = 81-134 nm) are obtained by the hydrothermal treatment of P25-TiO2 with NaOH, which in fact, altered the net surface charge of TNT and TNR particles. The observed ζ = -2.82 (P25-TiO2), -13.5 (TNT) and -22.5 mV (TNR) are significantly altered by the Ag and Cu deposition. It has been found here that TNT displayed best photocatalytic activity for the imidacloprid insecticide (C9H10ClN5O2) degradation to CO2 formation under UV irradiation because of its largest surface area 176 m2 g-1 among the catalysts studied.

  1. Charge regulation at semiconductor-electrolyte interfaces.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2015-07-01

    The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

  2. Superhydrophobic and icephobic surfaces prepared by RF-sputtered polytetrafluoroethylene coatings

    Energy Technology Data Exchange (ETDEWEB)

    Jafari, R., E-mail: rjafari@uqac.ca [NSERC / Hydro-Quebec / UQAC Industrial Chair on Atmospheric Icing of Power Network Equipment (CIGELE) and Canada Research Chair on Engineering of Power Network Atmospheric Icing (INGIVRE), Universite du Quebec a Chicoutimi, Chicoutimi, QC (Canada); Menini, R.; Farzaneh, M. [NSERC / Hydro-Quebec / UQAC Industrial Chair on Atmospheric Icing of Power Network Equipment (CIGELE) and Canada Research Chair on Engineering of Power Network Atmospheric Icing (INGIVRE), Universite du Quebec a Chicoutimi, Chicoutimi, QC (Canada)

    2010-12-15

    A superhydrophobic and icephobic surface were investigated on aluminum alloy substrate. Anodizing was used first to create a micro-nanostructured aluminum oxide underlayer on the alloy substrate. In a second step, the rough surface was coated with RF-sputtered polytetrafluoroethylene (PTFE or Teflon). Scanning electron microscopy images showed a 'bird's nest'-like structure on the anodized surface. The RF-sputtered PTFE coating exhibited a high static contact angle of {approx}165 deg. with a very low contact angle hysteresis of {approx}3 deg. X-ray photoelectron spectroscopy (XPS) results showed high quantities of CF{sub 3} and CF{sub 2} groups, which are responsible for the hydrophobic behavior of the coatings. The performance of this superhydrophobic film was studied under atmospheric icing conditions. These results showed that on superhydrophobic surfaces ice-adhesion strength was 3.5 times lower than on the polished aluminum substrate.

  3. Superhydrophobic and icephobic surfaces prepared by RF-sputtered polytetrafluoroethylene coatings

    International Nuclear Information System (INIS)

    Jafari, R.; Menini, R.; Farzaneh, M.

    2010-01-01

    A superhydrophobic and icephobic surface were investigated on aluminum alloy substrate. Anodizing was used first to create a micro-nanostructured aluminum oxide underlayer on the alloy substrate. In a second step, the rough surface was coated with RF-sputtered polytetrafluoroethylene (PTFE or Teflon). Scanning electron microscopy images showed a 'bird's nest'-like structure on the anodized surface. The RF-sputtered PTFE coating exhibited a high static contact angle of ∼165 deg. with a very low contact angle hysteresis of ∼3 deg. X-ray photoelectron spectroscopy (XPS) results showed high quantities of CF 3 and CF 2 groups, which are responsible for the hydrophobic behavior of the coatings. The performance of this superhydrophobic film was studied under atmospheric icing conditions. These results showed that on superhydrophobic surfaces ice-adhesion strength was 3.5 times lower than on the polished aluminum substrate.

  4. Superhydrophobic and icephobic surfaces prepared by RF-sputtered polytetrafluoroethylene coatings

    Science.gov (United States)

    Jafari, R.; Menini, R.; Farzaneh, M.

    2010-12-01

    A superhydrophobic and icephobic surface were investigated on aluminum alloy substrate. Anodizing was used first to create a micro-nanostructured aluminum oxide underlayer on the alloy substrate. In a second step, the rough surface was coated with RF-sputtered polytetrafluoroethylene (PTFE or Teflon ®). Scanning electron microscopy images showed a " bird's nest"-like structure on the anodized surface. The RF-sputtered PTFE coating exhibited a high static contact angle of ˜165° with a very low contact angle hysteresis of ˜3°. X-ray photoelectron spectroscopy (XPS) results showed high quantities of CF 3 and CF 2 groups, which are responsible for the hydrophobic behavior of the coatings. The performance of this superhydrophobic film was studied under atmospheric icing conditions. These results showed that on superhydrophobic surfaces ice-adhesion strength was 3.5 times lower than on the polished aluminum substrate.

  5. Enhancement of perchlorate removal from groundwater by cationic granular activated carbon: Effect of preparation protocol and surface properties.

    Science.gov (United States)

    Hou, Pin; Yan, Zhe; Cannon, Fred S; Yue, Ye; Byrne, Timothy; Nieto-Delgado, Cesar

    2018-06-01

    In order to obtain a high adsorption capacity for perchlorate, the epoxide-forming quaternary ammonium (EQA) compounds were chemically bonded onto granular activated carbon (GAC) surface by cationic reaction. The optimum preparation condition of the cationic GAC was achieved while applying softwood-based Gran C as the parent GAC, dosing EQA first at a pH of 12, preparation time of 48 h, preparation temperature of 50 °C, and mole ratio of EQA/oxygen groups of 2.5. The most favorable cationic GAC that had the QUAB360 pre-anchored exhibited the highest perchlorate adsorption capacity of 24.7 mg/g, and presented the longest bed volumes (3000 BV) to 2 ppb breakthrough during rapid small scale column tests (RSSCTs), which was 150 times higher than that for the pristine Gran C. This was attributed to its higher nitrogen amount (1.53 At%) and higher positive surface charge (0.036 mmol/g) at pH 7.5. Also, there was no leaching of the quaternary ammonium detected in the effluent of the RSSCTs, indicating there was no secondary pollution occurring during the perchlorate removal process. Overall, this study provides an effective and environmental-friendly technology for improving GAC perchlorate adsorption capacity for groundwater treatment. Copyright © 2018 Elsevier Ltd. All rights reserved.

  6. Surface Properties of a Novel Poly(vinyl alcohol Film Prepared by Heterogeneous Saponification of Poly(vinyl acetate Film

    Directory of Open Access Journals (Sweden)

    Seong Baek Yang

    2017-10-01

    Full Text Available Almost general poly(vinyl alcohol (PVA films were prepared by the processing of a PVA solution. For the first time, a novel poly(vinyl alcohol (PVA film was prepared by the saponification of a poly(vinyl acetate (PVAc film in a heterogenous medium. Under the same saponification conditions, the influence of saponification time on the degree of saponification (DS was studied for the preparation of the saponified PVA film, and it was found that the DS varied with time. Optical microscopy was used to confirm the characteristics and surface morphology of the saponified PVA film, revealing unusual black globules in the film structure. The contact angle of the films was measured to study the surface properties, and the results showed that the saponified PVA film had a higher contact angle than the general PVA film. To confirm the transformation of the PVAc film to the PVA film, 1H nuclear magnetic resonance spectroscopy, X-ray diffraction measurements, differential scanning calorimetry, and Fourier-transform infrared spectroscopy were employed.

  7. Preparation of MgO with High Surface Area, and Modification of Its Pore Characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Moon Hee; Park, Dong Gon [Sookmyung Women' s University, Seoul (Korea, Republic of)

    2003-10-15

    Thermal decomposition of hydrated surface layer of Mg(OH){sub 2} at 500 .deg. C in vacuum turned non-porous MgO into porous one with high surface area of around 270 m{sup 2}/g. Most of its surface area, 74 %, was from micropores, and rest of it was from mesopores in wedge-shaped slits, exhibiting bimodal size distribution centered around 30 and 90 A. Rehydration followed by subsequent dehydration at 300 .deg. C in dynamic vacuum further raised the surface area to 340 m{sup 2}/g. Fraction of microporous surface area was increased to 93%, and the shape of the mesopores was modified into parallel slits with a specific dimension of 32 A. Application of Fe{sub 2}O{sub 3} over MgO via iron complex formation did not alter the pore characteristics of MgO core, except slightly increased pore dimension. Over the course of the modification, Fe{sub 2}O{sub 3} stayed on the surface possibly via spill-over reaction.

  8. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

    Science.gov (United States)

    2015-08-27

    copyright information. 13. SUPPLEMENTARY NOTES. Enter information not included elsewhere such as: prepared in cooperation with; translation of; report...II-VI heterojunctions such as multi-color photodetectors and solar cells [2]. Mixing lattice-matched II-VI and III-V semiconductors could be an...at 77 K, further silicon oxide surface passivation can be done to suppress the surface leakage [10] in the future work. Figure 10 The dark I-V

  9. Preparation of MIP grafts for quercetin by tandem aryl diazonium surface chemistry and photopolymerization

    International Nuclear Information System (INIS)

    Salmi, Zakaria; Benmehdi, Houcine; Lamouri, Aazdine; Decorse, Philippe; Jouini, Mohamed; Chehimi, Mohamed M.; Yagci, Yusuf

    2013-01-01

    The food antioxidant quercetin was used as a template in an ultrathin molecularly imprinted polymer (MIP) film prepared by photopolymerization. Indium tin oxide (ITO) plates were electrografted with aryl layers via a diazonium salt precursor bearing two terminal hydroxyethyl groups. The latter act as hydrogen donors for the photosensitizer isopropylthioxanthone and enabled the preparation of MIP grafts through radical photopolymerization of methacrylic acid (the functional monomer) and ethylene glycol dimethacrylate (the crosslinker) in the presence of quercetin (the template) on the ITO. The template was extracted, and the remaining ITO electrode used for the amperometric determination of quercetin at a working potential of 0.26 V (vs. SCE). The analytical range is from 5.10 −8 to 10 −4 mol L −1 , and the detection limit is 5.10 −8 mol L −1 . (author)

  10. Study of preparation and surface morphology of self-ordered nanoporous alumina

    International Nuclear Information System (INIS)

    Rodrigues, Elisa Marchezini; Martins, Maximiliano Delany; Silva, Ronald Arreguy

    2013-01-01

    Nanoporous alumina is a typical material that exhibits self-ordered nanochannels spontaneously organized in hexagonal shape. Produced by anodizing of metallic aluminum, it has been used as a template for production of materials at the nanoscale. This work aimed to study the preparation of nanoporous alumina by anodic anodizing of metallic aluminum substrates. The nanoporous alumina was prepared following the methodology proposed by Masuda and Fukuda (1995), a two-step method consisting of anodizing the aluminum sample in the potentiostatic mode, removing the layer of aluminum oxide (alumina) formed and then repeat the anodization process under the same conditions as the first anodization. This method produces nanoporous alumina with narrow pore diameter distribution and well-ordered structure. (author)

  11. Design, preparation, surface recognition properties, and characteristics of icariin molecularly imprinted polymers

    Directory of Open Access Journals (Sweden)

    Xiaohe Jia

    2015-12-01

    Full Text Available Icariin molecularly imprinted polymers (MIPs were prepared by precipitation polymerization. Prior to the polymerization, computer simulation was performed to sketchily choose the suitable functional monomer and the corresponding polymerization solvent. The optimized synthesis parameters, including the functional monomer acrylamide, the mixture of methanol and acetonitrile (V:V = 3:1 as the polymerization solvent, and the reaction molar ratio (1:6:80 of template molecule, functional monomer and cross-linker, were respectively obtained by single factor analysis and orthogonal design methods. The results of the adsorption experiments showed that the resultant MIPs exhibited good adsorption and recognition abilities to icariin. Scatchard analysis illustrated that the homogeneous binding sites only for icariin molecules were formed in the prepared MIPs.

  12. Rational preparation of dibenzothiophene-imprinted polymers by surface imprinting technique combined with atom transfer radical polymerization

    International Nuclear Information System (INIS)

    Yang, Wenming; Liu, Lukuan; Zhou, Zhiping; Liu, Hong; Xie, Binze; Xu, Wanzhen

    2013-01-01

    A computational simulation method is introduced to simulate the dibenzothiophene-monomer pre-assembly system of molecular imprinted polymers. The interaction type and intensity between dibenzothiophene and monomer are discussed from the binding energy and spatial position distribution. The simulation and analysis results indicate that the amount of the function monomer is not the more the better in preparing molecular imprinted polymers. Based on the above results, a novel dibenzothiophene-imprinted polymers with the favorable specific adsorption effect was prepared by surface imprinting technique combined with atom transfer radical polymerization. This combined technologies are used for preparing a desulfurization adsorbent for the first time. Various measures were selected to characterize the structure and morphology of the prepared adsorbent. The characterization results show that the adsorbent has suitable features for further adsorption process. A series of static adsorption experiments were conducted to analyze its adsorption performance. The adsorption process follows Elovich model by the kinetic analysis and Sips equation by the isothermal analysis. The approach we described will provide another opportunity in the deep desulfurization field.

  13. Optimization Of Activated Carbon Preparation From Spent Mushroom Farming Waste (SMFW) Via Box- Behnken Design Of Response Surface Methodology

    International Nuclear Information System (INIS)

    Nurul Shuhada Md Desa; Zaidi Ab Ghani; Suhaimi Abdul-Talib; Chia-Chay, T.

    2016-01-01

    This study focuses on activated carbon preparation from spent mushroom farming waste (SMFW) via chemical activation using Box-Behnken design (BBD) of Response Surface Methodology (RSM). Potassium hydroxide (KOH) functions as activating reagent and it play an important role in enhancing the activated carbon porosity. Three input parameters and two responses were evaluated via this software generated experimental design. The effects of three preparation parameters of impregnation ratio, activation time and activation temperature as well as two responses of carbon yield and iodine number were investigated. The optimum conditions for preparing activated carbon from SMFW was found at SMFW: KOH impregnation ratio of 0.25, activation time of 30 min and activation temperature of 400 degree Celsius which resulted in 28.23 % of carbon yield and 314.14 mg/ g of iodine number with desirability of 0.994. The predicted results were well corresponded with experimental results. This study is important in economical large scale SMFW activated carbon preparation for application study of adsorption process for metal treatment in wastewater with minimum chemical and energy input. (author)

  14. Selective photochemical dry etching of compound semiconductors

    International Nuclear Information System (INIS)

    Ashby, C.I.H.

    1988-01-01

    When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

  15. Preparation of poly(methyl methacrylate) microcapsules by in situ polymerization on the surface of calcium carbonate particles.

    Science.gov (United States)

    Sato, Katsuhiko; Nakajima, Tatsuya; Anzai, Jun-ichi

    2012-12-01

    Poly(methyl methacrylate) (PMMA) microcapsules were prepared by the in situ polymerization of methyl methacrylate (MMA) and N,N'-methylenebisacrylamide on the surface of calcium carbonate (CaCO(3)) particles, followed by the dissolution of the CaCO(3) core in ethylenediaminetetraacetic acid solution. The microcapsules were characterized using fluorescence microscopy, atomic force microscopy, scanning electron microscopy, and Fourier transform infrared spectroscopy. The average sizes of the CaCO(3) particles and PMMA capsules were 3.8±0.6 and 4.0±0.6 μm, respectively. A copolymer consisting of MMA and rhodamine B-bearing MMA was also used to prepare microcapsules for fluorescent microscopy observations. Fluorescein isothiocyanate-labeled bovine serum albumin was enclosed in the PMMA microcapsules and its release properties were studied. Copyright © 2012 Elsevier Inc. All rights reserved.

  16. Preparation of Magnetic Sorbent with Surface Modified by C18for Removal of Selected Organic Pollutants from Aqueous Samples

    Science.gov (United States)

    Kuráň, Pavel; Pilnaj, Dominik; Ciencialová, Lucie; Pšenička, Martin

    2017-12-01

    Magnetic sorbents have great potential in environmental applications due to their simple synthesis and separation in magnetic field, usability in heterogeneous systems and low toxicity. Possible syntheses, surface modifications and characteristics were described by Li et al 2013. This type of solid-phase extraction is being successfully used in various fields as health care, microbiology, biotechnologies or sample preconcentration in analytical chemistry. In this preliminary study we report on the preparation and application of magnetically separable sorbent with surface modified by C18 alkyl chain for purification of water contaminated by environmentally hazardous organic compounds. Magnetic cores were co-precipitated from Fe2+ and Fe3+ chlorides in alkalic aqueous solution. Surface of synthetized Fe3O4 was modified with SiO2 by tetraethylorthosilicate to assure physico-chemical stability. Furthermore, Fe3O4/SiO2 complex has been treated by C18 functional group, which provides good affinity towards hydrophobic substances in water. Efficiency of sorption under various conditions has been examined on benzene, toluene, ethylbenzene and xylenes (BTEX), compounds found in petroleum products which contaminate air, soil and groundwater near of store tanks. Sorption kinetics was followed by gas chromatography with mass spectrometry. The preliminary sorption kinetics data and efficiency of BTEX removal point at the possible application of prepared magnetic sorbent for BTEX removal, especially for ethylbenzene and xylenes.

  17. Preparation of Artificial Skin that Mimics Human Skin Surface and Mechanical Properties.

    Science.gov (United States)

    Shimizu, Rana; Nonomura, Yoshimune

    2018-01-01

    We have developed an artificial skin that mimics the morphological and mechanical properties of human skin. The artificial skin comprises a polyurethane block possessing a microscopically rough surface. We evaluated the tactile sensations when skin-care cream was applied to the artificial skin. Many subjects perceived smooth, moist, and soft feels during the application process. Cluster analysis showed that these characteristic tactile feels are similar to those when skin-care cream is applied to real human skin. Contact angle analysis showed that an oil droplet spread smoothly on the artificial skin surface, which occurred because there were many grooves several hundred micrometers in width on the skin surface. In addition, when the skin-care cream was applied, the change in frictional force during the dynamic friction process increased. These wetting and frictional properties are important factors controlling the similarity of artificial skin to real human skin.

  18. Method for preparing microstructure arrays on the surface of thin film material

    KAUST Repository

    Wang, Peng; Tang, Bo; Zhang, Lianbin

    2017-01-01

    Methods are provided for growing a thin film of a nanoscale material. Thin films of nanoscale materials are also provided. The films can be grown with microscale patterning. The method can include vacuum filtration of a solution containing the nanostructured material through a porous substrate. The porous substrate can have a pore size that is comparable to the size of the nanoscale material. By patterning the pores on the surface of the substrate, a film can be grown having the pattern on a surface of the thin film, including on the top surface opposite the substrate. The nanoscale material can be graphene, graphene oxide, reduced graphene oxide, molybdenum disulfide, hexagonal boron nitride, tungsten diselenide, molybdenum trioxide, or clays such as montmorillonite or lapnotie. The porous substrate can be a porous organic or inorganic membrane, a silicon stencil membrane, or similar membrane having pore sizes on the order of microns.

  19. Method for preparing microstructure arrays on the surface of thin film material

    KAUST Repository

    Wang, Peng

    2017-02-09

    Methods are provided for growing a thin film of a nanoscale material. Thin films of nanoscale materials are also provided. The films can be grown with microscale patterning. The method can include vacuum filtration of a solution containing the nanostructured material through a porous substrate. The porous substrate can have a pore size that is comparable to the size of the nanoscale material. By patterning the pores on the surface of the substrate, a film can be grown having the pattern on a surface of the thin film, including on the top surface opposite the substrate. The nanoscale material can be graphene, graphene oxide, reduced graphene oxide, molybdenum disulfide, hexagonal boron nitride, tungsten diselenide, molybdenum trioxide, or clays such as montmorillonite or lapnotie. The porous substrate can be a porous organic or inorganic membrane, a silicon stencil membrane, or similar membrane having pore sizes on the order of microns.

  20. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  1. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  2. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  3. Impact of pulsed xenon ultraviolet disinfection on surface contamination in a hospital facility's expressed human milk feed preparation area.

    Science.gov (United States)

    Dippenaar, Ricky; Smith, Johan

    2018-02-23

    Expressed human milk (EHM) feed preparation areas represent a potential source of unintentional nosocomial infection. Daily disinfection of environmental surfaces remains an essential intervention to mitigate nosocomial infections. The inefficiency of conventional cleaning and disinfection contributes to an increased risk for the acquisition of multi-drug resistant pathogens. "Non touch" technologies such as the pulsed xenon ultraviolet (PX-UVD) light device have documented sustained reduction in surface bacterial colonization and reduced cross contamination. The impact of a PX-UVD on surface colony forming units per square centimeter (cfu/cm 2 ) in feed preparation areas was evaluated following its implementation as standard care. A quasi-experimental study was performed documenting bacterial colonization from 6 high risk feed preparation areas in a community care hospital in South Africa. Pre and post conventional cleaning neutralizing rinse swabs were collected fortnightly over a 16 week control period prior to the introduction of the PX-UVD and compared to a matching set of samples for the PX-UVD period. A 90% reduction in total surface bioburden was noted from the control period (544 cfu/cm 2 ) compared to the corresponding PX-UVD period (50 cfu/cm 2 ). Sub -analysis of both the Pre-clean Control: Pre-clean PX-UVD counts as well as the Post-clean Control: Post-clean PX-UVD counts noted significant improvements (p cleaning total surface bioburden following exposure to the PX-UVD (p = 0.0004). The introduction of the PX-UVD was associated with a sustained reduction in the pre clean bioburden counts with a risk trend (per week) 0.19, (95% CI [0.056, 0.67], p = 0.01). The use of a PX-UVD as adjunct to standard cleaning protocols was associated with a significant decrease in surface bioburden. The study demonstrated the inefficiency of conventional cleaning. Persistence of potentially pathological species in both periods highlights current health

  4. Nanocrystalline-grained tungsten prepared by surface mechanical attrition treatment: Microstructure and mechanical properties

    International Nuclear Information System (INIS)

    Guo, Hong-Yan; Xia, Min; Wu, Zheng-Tao; Chan, Lap-Chung; Dai, Yong; Wang, Kun; Yan, Qing-Zhi; He, Man-Chao; Ge, Chang-Chun; Lu, Jian

    2016-01-01

    A nanostructured surface layer was fabricated on commercial pure tungsten using the method of surface mechanical attrition treatment (SMAT). The microstructure evolution of the surface layer was characterized by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) and its formation mechanism was discussed as well. Both refinement and elongation of the brittle W grains were confirmed. The elongated SMATed W was heavily strained, the maximum value of the strain at the grain boundaries reaches as high as 3–5%. Dislocation density in the SMATed W nanograins was found to be 5 × 10 12  cm −2 . The formation of the nanograins in the top surface layer of the W was ascribed to the extremely high strain and strain rate, as well as the multidirectional repetitive loading. Bending strength of commercial W could be improved from 825 MPa to 1850 MPa by SMAT process. Microhardness results indicated the strain range in SMATed W can reach up to 220 μm beneath the top surface. The notched Charpy testing results demonstrated that SMATed W possess higher ductility than that of commercial W. The top surface of the W plates with and without SMATe processing possesses residual compressive stress of about −881 MPa and −234 MPa in y direction, and −872 MPa and −879 MPa in x direction respectively. The improvement of toughness (DBTT shift) of SMATed W may be the synergistic effect of residual compressive stress, dislocation density improvement and microstructure refinement induced by SMAT processing. SMAT processing could be a complementary method to further decrease the DBTT value of tungsten based materials.

  5. Preparation and surface characterization of plasma-treated and biomolecular-micropatterned polymer substrates

    Science.gov (United States)

    Langowski, Bryan Alfred

    A micropatterning process creates distinct microscale domains on substrate surfaces that differ from the surfaces' original chemical/physical properties. Numerous micropatterning methods exist, each having relative advantages and disadvantages in terms of cost, ease, reproducibility, and versatility. Polymeric surfaces micropatterned with biomolecules have many applications, but are specifically utilized in tissue engineering as cell scaffolds that attempt to controlled tissue generation in vivo and ex vivo. As the physical and chemical cues presented by micropatterned substrates control resulting cellular behavior, characterization of these cues via surface-sensitive analytical techniques is essential in developing cell scaffolds that mimic complex in vivo physicochemical environments. The initial focus of this thesis is the chemical and physical characterization of plasma-treated, microcontact-printed (muCP) polymeric substrates used to direct nerve cell behavior. Unmodified and oxygen plasma-treated poly(methyl methacrylate) (PMMA) substrates were analyzed by surface sensitive techniques to monitor plasma-induced chemical and physical modifications. Additionally, protein-micropattern homogeneity and size were microscopically evaluated. Lastly, poly(dimethylsiloxane) (PDMS) stamps and contaminated PMMA substrates were characterized by spectroscopic and microscopic methods to identify a contamination source during microcontact printing. The final focus of this thesis is the development of microscale plasma-initiated patterning (muPIP) as a versatile, reproducible micropatterning method. Using muPIP, polymeric substrates were micropatterned with several biologically relevant inks. Polymeric substrates were characterized following muPIP by surface-sensitive techniques to identify the technique's underlying physical and chemical bases. In addition, neural stem cell response to muPIP-generated laminin micropatterns was microscopically and biologically evaluated

  6. Nanocrystalline-grained tungsten prepared by surface mechanical attrition treatment: Microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Hong-Yan [State Key Laboratory for GeoMechanics and Deep Underground Engineering, China University of Mining and Technology, Beijing 100083 (China); Institute of Nuclear Materials, University of Science & Technology Beijing, Beijing 100083 (China); Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Tae Chee Avenue Kowloon, Hong Kong 999077 (China); Xia, Min, E-mail: xmdsg@ustb.edu.cn [Institute of Nuclear Materials, University of Science & Technology Beijing, Beijing 100083 (China); Wu, Zheng-Tao [College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005 (China); Chan, Lap-Chung [Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Tae Chee Avenue Kowloon, Hong Kong 999077 (China); Dai, Yong; Wang, Kun [Laboratory for Nuclear Materials, Paul Scherrer Institut, 5323 Villigen PSI (Switzerland); Yan, Qing-Zhi [Institute of Nuclear Materials, University of Science & Technology Beijing, Beijing 100083 (China); He, Man-Chao [State Key Laboratory for GeoMechanics and Deep Underground Engineering, China University of Mining and Technology, Beijing 100083 (China); Ge, Chang-Chun, E-mail: ccge@mater.ustb.edu.cn [Institute of Nuclear Materials, University of Science & Technology Beijing, Beijing 100083 (China); Lu, Jian, E-mail: jianlu@cityu.edu.hk [Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Tae Chee Avenue Kowloon, Hong Kong 999077 (China)

    2016-11-15

    A nanostructured surface layer was fabricated on commercial pure tungsten using the method of surface mechanical attrition treatment (SMAT). The microstructure evolution of the surface layer was characterized by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) and its formation mechanism was discussed as well. Both refinement and elongation of the brittle W grains were confirmed. The elongated SMATed W was heavily strained, the maximum value of the strain at the grain boundaries reaches as high as 3–5%. Dislocation density in the SMATed W nanograins was found to be 5 × 10{sup 12} cm{sup −2}. The formation of the nanograins in the top surface layer of the W was ascribed to the extremely high strain and strain rate, as well as the multidirectional repetitive loading. Bending strength of commercial W could be improved from 825 MPa to 1850 MPa by SMAT process. Microhardness results indicated the strain range in SMATed W can reach up to 220 μm beneath the top surface. The notched Charpy testing results demonstrated that SMATed W possess higher ductility than that of commercial W. The top surface of the W plates with and without SMATe processing possesses residual compressive stress of about −881 MPa and −234 MPa in y direction, and −872 MPa and −879 MPa in x direction respectively. The improvement of toughness (DBTT shift) of SMATed W may be the synergistic effect of residual compressive stress, dislocation density improvement and microstructure refinement induced by SMAT processing. SMAT processing could be a complementary method to further decrease the DBTT value of tungsten based materials.

  7. Preparation of theoretical scanning tunneling microscope images of adsorbed molecules: a theoretical study of benzene on the Cu(110) surface

    International Nuclear Information System (INIS)

    Shapter, J.G.; Rogers, B.L.; Ford, M.J.

    2003-01-01

    Full text: Since its development in 1982, the Scanning Tunneling Microscope (STM) has developed into a powerful tool for the study of surfaces and adsorbates. However, the utility of the technique can be further enhanced through the development of techniques for generating theoretical STM images. This is particularly true when studying molecules adsorbed on a substrate, as the results are often interpreted superficially due to an inadequate understanding of the orbital overlap probed in the experiment. A method of preparing theoretical scanning tunneling microscope (STM) images using comparatively inexpensive desktop computers and the commercially available CRYSTAL98 package is presented through a study of benzene adsorbed on the Cu(110) surface. Density Functional Theory (DFT) and Hartree-Fock (HF) methods are used to model clean Cu(110) slabs of various thicknesses and to simulate the adsorption of benzene onto these slabs. Eight possible orientations of benzene on the Cu(110) surface are proposed, and the optimum orientation according to the calculations is presented. Theoretical STM images of the Cu(110) surface and benzene adsorbed on the Cu(110) surface are compared with experimental STM images of the system from a published study. Significant differences are observed and are examined in detail

  8. Pore Structure and Fluoride Ion Adsorption Characteristics of Zr (IV) Surface-Immobilized Resin Prepared Using Polystyrene as a Porogen

    Science.gov (United States)

    Mizuki, Hidenobu; Ito, Yudai; Harada, Hisashi; Uezu, Kazuya

    Zr(IV) surface-immobilized resins for removal of fluoride ion were prepared by surface template polymerization using polystyrene as a porogen. At polymerization, polystyrene was added in order to increase mesopores (2-50 nm) and macropore (>50 nm) with large macropores (around 300 nm) formed with internal aqueous phase of W⁄O emulsion. The pore structure of Zr(IV) surface-immobilized resins was evaluated by measuring specific surface area, pore volume, and pore size distribution with volumetric adsorption measurement instrument and mercury porosimeter. The adsorption isotherms were well fitted by Langmuir equation. The removal of fluoride was also carried out with column method. Zr(IV) surface-immobilized resins, using 10 g⁄L polystyrene in toluene at polymerization, possessed higher volume of not only mesopores and macropores but also large macropores. Furethermore, by adding the polystyrene with smaller molecular size, the pore volume of mesopores, macropores and large macropores was significantly increased, and the fluoride ion adsorption capacity and the column utilization also increased.

  9. Plasma-polymerized SiOx deposition on polymer film surfaces for preparation of oxygen gas barrier polymeric films

    International Nuclear Information System (INIS)

    Inagaki, N.

    2003-01-01

    SiOx films were deposited on surfaces of three polymeric films, PET, PP, and Nylon; and their oxygen gas barrier properties were evaluated. To mitigate discrepancies between the deposited SiOx and polymer film, surface modification of polymer films was done, and how the surface modification could contribute to was discussed from the viewpoint of apparent activation energy for the permeation process. The SiOx deposition on the polymer film surfaces led to a large decrease in the oxygen permeation rate. Modification of polymer film surfaces by mans of the TMOS or Si-COOH coupling treatment in prior to the SiOx deposition was effective in decreasing the oxygen permeation rate. The cavity model is proposed as an oxygen permeation process through the SiOx-deposited Nylon film. From the proposed model, controlling the interface between the deposited SiOx film and the polymer film is emphasized to be a key factor to prepare SiOx-deposited polymer films with good oxygen gas barrier properties. (author)

  10. Protein Compatible Polymer Brushes on Polymeric Substrates Prepared by Surface-Initiated Transfer Radica Polymerization

    DEFF Research Database (Denmark)

    Fristrup, Charlotte Juel; Eskimergen, Rüya; Burkrinsky, J.T.

    2008-01-01

    have been made with model systems of poly(ether ether ketone) (PEEK) films as they can easily be functionalized [1]. Moreover, the inert material polypropylene has successfully beel! activated using a photochemical method [2]. Different polymers including PEG-like matenals have been investigated...... as coating materials. ATR FTIR, water contact angle measurements, Thermal Gravimetric Analysis (TGA), and X-ray Photoelectron Spectroscopy (XPS) confirmed that hydrophilic polymers have been grafted from the surface. The surface topography which was evaluated by Atomic Force Microscopy (AFM) did not change...

  11. Preparation, Surface Properties, and Therapeutic Applications of Gold Nanoparticles in Biomedicine.

    Science.gov (United States)

    Panahi, Yunes; Mohammadhosseini, Majid; Nejati-Koshki, Kazem; Abadi, Azam Jafari Najaf; Moafi, Hadi Fallah; Akbarzadeh, Abolfazl; Farshbaf, Masoud

    2017-02-01

    Gold nanoparticles (AuNPs) due to their unique properties and manifold surface functionalities have been applied in bio-nanotechnology. The application of GNPs in recent medical and biological research is very extensive. Especially it involves applications such as detection and photothermalysis of microorganisms and cancer stem cells, biosensors; optical bio-imaging and observing of cells and these nanostructures also serve as practical platforms for therapeutic agents. In this review we studied all therapeutic applications of gold nanoparticles in biomedicine, synthesis methods, and surface properties. © Georg Thieme Verlag KG Stuttgart · New York.

  12. Preparation and controlled drug delivery applications of mesoporous silica polymer nanocomposites through the visible light induced surface-initiated ATRP

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Long; Liu, Meiying; Mao, Liucheng; Xu, Dazhuang; Wan, Qing; Zeng, Guangjian; Shi, Yingge [Department of Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Wen, Yuanqing, E-mail: m18600788382@163.com [Department of Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Zhang, Xiaoyong, E-mail: xiaoyongzhang1980@gmail.com [Department of Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Wei, Yen, E-mail: weiyen@tsinghua.edu.cn [Department of Chemistry and The Tsinghua Center for Frontier Polymer Research, Tsinghua University, Beijing, 100084 (China)

    2017-08-01

    Graphical abstract: A novel strategy for surface PEGylation of mesoporous silica nanoparticles was developed based on the light induced surface-initiated atom transfer radical polymerization. - Highlights: • Surface modification of silica nanoparticles through light induced surface-initiated ATRP. • MSNs-NH{sub 2}-poly(IA-co-PEGMA) nanocomposites show high water dispersity. • MSNs-NH{sub 2}-poly(IA-co-PEGMA) nanocomposites are promising for biomedical applications. • The light induced ATRP possesses many advantages as compared with traditional ATRP. - Abstract: The mesoporous materials with large pore size, high specific surface area and high thermal stability have been widely utilized in a variety of fields ranging from environmental remediation to separation and biomedicine. However, surface modification of these silica nanomaterials is required to endow novel properties and achieve better performance for most of these applications. In this work, a new method has been established for surface modification of mesoporous silica nanoparticles (MSNs) that relied on the visible light induced atom transfer radical polymerization (ATRP). In the procedure, the copolymers composited with itaconic acid (IA) and poly(ethylene glycol)methyl acrylate (PEGMA) were grafted from MSNs using IA and PEGMA as the monomers and 10-Phenylphenothiazine(PTH) as the organic catalyst. The successful preparation of final polymer nanocomposites (named as MSNs-NH{sub 2}-poly(IA-co-PEGMA)) were evidenced by a series of characterization techniques. More importantly, the anticancer agent cisplatin can be effectively loaded on MSNs-NH{sub 2}-poly(IA-co-PEGMA) and controlled release it from the drug-loading composites with pH responsive behavior. As compared with conventional ATRP, the light induced surface-initiated ATRP could also be utilized for preparation of various silica polymer nanocomposites under rather benign conditions (e.g. absent of transition metal ions, low polymerization

  13. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  14. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  15. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  16. In situ Silver Spot Preparation and on-Plate Surface-Enhanced Raman Scattering Detection in Thin Layer Chromatography Separation

    Science.gov (United States)

    Herman, K.; Mircescu, N. E.; Szabo, L.; Leopold, L. F.; Chiş, V.; Leopold, N.

    2013-05-01

    An improved approach for surface-enhanced Raman scattering (SERS) detection of mixture constituents after thin layer chromatography (TLC) separation is presented. A SERS active silver substrate was prepared under open air conditions, directly on the thin silica film by photo-reduction of silver nitrate, allowing the detection of binary mixtures of cresyl violet, bixine, crystal violet, and Cu(II) complex of 4-(2-pyridylazo)resorcinol. The recorded SERS spectrum provides a unique spectral fingerprint for each molecule; therefore the use of analyte standards is avoided, thus rendering the presented procedure advantageous compared to the conventional detection methodology in TLC.

  17. A simple method for the preparation of difficult 99mTc complexes using surface adsorbed stannous ions

    International Nuclear Information System (INIS)

    Maddalena, D.J.; Snowdon, G.M.; Pojer, P.M.

    1987-01-01

    A simple new technique where stannous tin is adsorbed on the inner surface of plastic tubing and used to reduce ( 99m Tc) pertechnetate prior to labelling radiopharmaceuticals, has been evaluated, using some lipophillic and metal containing ligands. Complexes formed using the technique had good labelling efficiency and behaved the same in rat biodistribution studies as those prepared using conventional labelling methods. The labelling efficiency of the ligands was not related to their lipophillicity suggesting that this technique may be useful for labelling lipophillic and other difficult ligands such as those containing metals, which are incompatible with free stannous ions in solution. (M.E.L.) [es

  18. Conductivity in transparent oxide semiconductors.

    Science.gov (United States)

    King, P D C; Veal, T D

    2011-08-24

    Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

  19. Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

    DEFF Research Database (Denmark)

    Hermansson, Karin; Grey, Francois; Bengtsson, Stefan

    1998-01-01

    Silicon surfaces have been cleaned and bonded in ultrahigh vacuum, at a pressure in the 10(-10) Torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface by spreading...

  20. Preparation of MgO Catalytic Support in Shaped Mesoporous High Surface Area Form

    Czech Academy of Sciences Publication Activity Database

    Gulková, Daniela; Šolcová, Olga; Zdražil, Miroslav

    2004-01-01

    Roč. 76, 1-3 (2004), s. 137-149 ISSN 1387-1811 R&D Projects: GA AV ČR IAA4072306 Institutional research plan: CEZ:AV0Z4072921 Keywords : MgO support * sigh Surface area * texture Subject RIV: CC - Organic Chemistry Impact factor: 2.093, year: 2004

  1. Surface preparation process of a uranium titanium alloy, in particular for chemical nickel plating

    International Nuclear Information System (INIS)

    Henri, A.; Lefevre, D.; Massicot, P.

    1987-01-01

    In this process the uranium alloy surface is attacked with a solution of lithium chloride and hydrochloric acid. Dissolved uranium can be recovered from the solution by an ion exchange resin. Treated alloy can be nickel plated by a chemical process [fr

  2. Surface topography and bond strengths of feldspathic porcelain prepared using various sandblasting pressures.

    Science.gov (United States)

    Moravej-Salehi, Elham; Moravej-Salehi, Elahe; Valian, Azam

    2016-11-01

    The purpose of this study was to determine the bond strength of composite resin to feldspathic porcelain and its surface topography after sandblasting at different pressures. In this in vitro study, 68 porcelain disks were fabricated and randomly divided into four groups of 17. The porcelain surface in group 1 was etched with hydrofluoric acid. Groups 2, 3, and 4 were sandblasted at 2, 3 and 4 bars pressure, respectively. Surface topography of seven samples in each of the four groups was examined by a scanning electron microscope (SEM). The remaining 40 samples received the same silane agent, bonding agent, and composite resin and they were then subjected to 5000 thermal cycles and evaluated for shear bond strength. Data were analyzed using one-way anova. The mode of failure was determined using stereomicroscope and SEM. The highest shear bond strength was seen in group 4. however, statistically significant differences were not seen between the groups (P = 0.780). The most common mode of failure was cohesive in porcelain. The SEM showed different patterns of hydrofluoric acid etching and sandblasting. Increasing the sandblasting pressure increased the surface roughness of feldspathic porcelain but no difference in bond strength occurred. © 2015 Wiley Publishing Asia Pty Ltd.

  3. Apparatus suitable for plasma surface treating and process for preparing membrane layers

    NARCIS (Netherlands)

    1988-01-01

    The invention relates to an apparatus suitable for plasma surface treating (e.g. forming a membrane layer on a substrate) which comprises a plasma generation section (2) which is in communication via at least one plasma inlet means (4) (e.g. a nozzle) with an enclosed plasma treating section (3)

  4. α-particle shielding of semiconductor device

    International Nuclear Information System (INIS)

    McKeown, P.J.A.; Perry, J.P.; Waddell, J.M.; Barker, K.D.

    1981-01-01

    Soft errors in semiconductor devices, e.g. random access memories, arising from the bombardment of the device by alpha particles produced by the disintegration of minute traces of uranium or thorium in the packaging materials are prevented by coating the active surface of the semiconductor chip with a thin layer, e.g. 20 to 100 microns of an organic polymeric material, this layer being of sufficient thickness to absorb the particles. Typically, the polymer is a poly-imide formed by u.v. electron-beam or thermal curing of liquid monomer applied to the chip surface. (author)

  5. Characterization and methanol electrooxidation studies of Pt(111)/Os surfaces prepared by spontaneous deposition.

    Science.gov (United States)

    Johnston, Christina M; Strbac, Svetlana; Lewera, Adam; Sibert, Eric; Wieckowski, Andrzej

    2006-09-12

    Catalytic activity of the Pt(111)/Os surface toward methanol electrooxidation was optimized by exploring a wide range of Os coverage. Various methods of surface analyses were used, including electroanalytical, STM, and XPS methods. The Pt(111) surface was decorated with nanosized Os islands by spontaneous deposition, and the Os coverage was controlled by changing the exposure time to the Os-containing electrolyte. The structure of Os deposits on Pt(111) was characterized and quantified by in situ STM and stripping voltammetry. We found that the optimal Os surface coverage of Pt(111) for methanol electrooxidation was 0.7 +/- 0.1 ML, close to 1.0 +/- 0.1 Os packing density. Apparently, the high osmium coverage Pt(111)/Os surface provides more of the necessary oxygen-containing species (e.g., Os-OH) for effective methanol electrooxidation than the Pt(111)/Os surfaces with lower Os coverage (vs e.g., Ru-OH). Supporting evidence for this conjecture comes from the CO electrooxidation data, which show that the onset potential for CO stripping is lowered from 0.53 to 0.45 V when the Os coverage is increased from 0.2 to 0.7 ML. However, the activity of Pt(111)/Os for methanol electrooxidation decreases when the Os coverage is higher than 0.7 +/- 0.1 ML, indicating that Pt sites uncovered by Os are necessary for sustaining significant methanol oxidation rates. Furthermore, osmium is inactive for methanol electrooxidation when the platinum substrate is absent: Os deposits on Au(111), a bulk Os ingot, and thick films of electrodeposited Os on Pt(111), all compare poorly to Pt(111)/Os. We conclude that a bifunctional mechanism applies to the methanol electrooxidation similarly to Pt(111)/Ru, although with fewer available Pt sites. Finally, the potential window for methanol electrooxidation on Pt(111)/Os was observed to shift positively versus Pt(111)/Ru. Because of the difference in the Os and Ru oxophilicity under electrochemical conditions, the Os deposit provides fewer

  6. Preparation, quantitative surface analysis, intercalation characteristics and industrial implications of low temperature expandable graphite

    Science.gov (United States)

    Peng, Tiefeng; Liu, Bin; Gao, Xuechao; Luo, Liqun; Sun, Hongjuan

    2018-06-01

    Expandable graphite is widely used as a new functional carbon material, especially as fire-retardant; however, its practical application is limited due to the high expansion temperature. In this work, preparation process of low temperature and highly expandable graphite was studied, using natural flake graphite as raw material and KMnO4/HClO4/NH4NO3 as oxidative intercalations. The structure, morphology, functional groups and thermal properties were characterized during expanding process by Fourier transform infrared spectroscopy (FTIR), Raman spectra, thermo-gravimetry differential scanning calorimetry (TG-DSC), X-ray diffraction (XRD), and scanning electron microscope (SEM). The analysis showed that by oxidation intercalation, some oxygen-containing groups were grafted on the edge and within the graphite layer. The intercalation reagent entered the graphite layer to increase the interlayer spacing. After expansion, the original flaky expandable graphite was completely transformed into worm-like expanded graphite. The order of graphite intercalation compounds (GICs) was proposed and determined to be 3 for the prepared expandable graphite, based on quantitative XRD peak analysis. Meanwhile, the detailed intercalation mechanisms were also proposed. The comprehensive investigation paved a benchmark for the industrial application of such sulfur-free expanded graphite.

  7. Physicochemical properties and in vitro cytocompatibility of modified titanium surfaces prepared via micro-arc oxidation with different calcium concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Sui-Dan; Zhang, Hui [Guanghua School of Stomatology, Hospital of Stomatology, Guangdong Key Laboratory of Stomatology, Sun Yat-sen University, Guangzhou 510055 (China); Dong, Xu-Dong [Faculty of Pharmaceutical Sciences, University of British Columbia, Vancouver, BC V6T 1Z3 (Canada); Ning, Cheng-Yun [College of Material Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Fok, Alex S.L. [Minnesota Dental Research Center of Biomaterials and Biomechanics, School of Dentistry, University of Minnesota, Minneapolis, MN 55414 (United States); Wang, Yan, E-mail: wyan65@163.com [Guanghua School of Stomatology, Hospital of Stomatology, Guangdong Key Laboratory of Stomatology, Sun Yat-sen University, Guangzhou 510055 (China)

    2015-02-28

    Highlights: • MAO coating improves the surface characteristics and cytocompatibility of titanium. • Composition of MAO coating varies with the electrolyte concentration. • MAO coating properties can be optimized by adjusting the electrolyte concentration. • Higher CA concentration contributes to more favorable MAO coating cytocompatibility. - Abstract: Objective: To explore the effect of calcium concentration in the electrolyte solution on the physicochemical properties and biocompatibility of coatings formed by micro-arc oxidation (MAO) on titanium surfaces. Methods: The surfaces of pure titanium plates were modified by MAO in an electrolytic solution containing calcium acetate (CA; C{sub 4}H{sub 6}CaO{sub 4}) at concentrations of 0.05, 0.1, 0.2, or 0.3 M and β-glycerophosphate disodium salt pentahydrate (β-GP; C{sub 3}H{sub 7}Na{sub 2}O{sub 6}P·5H{sub 2}O) at a fixed concentration of 0.02 M. Surface topography, elemental characteristics, phase composition, and roughness were investigated by scanning electron microscopy, energy-dispersive X-ray analysis, X-ray diffraction, and a surface roughness tester, respectively. To assess the cytocompatibility and osteoinductivity of the surfaces, MC3T3-E1 preosteoblasts were cultured on the surfaces in vitro, and cell morphology, adhesion, proliferation, and differentiation were observed. Results: The porous MAO coating was composed primarily of TiO{sub 2} rutile and anatase. The amount of TiO{sub 2} rutile, the Ca/P ratio, and the surface roughness of the MAO coating increased with increasing CA concentration in the electrolyte solution. Ca{sub 3}(PO{sub 4}){sub 2}, CaCO{sub 3}, and CaTiO{sub 3} were formed on MAO-treated surfaces prepared with CA concentrations of 0.2 and 0.3 M. Cell proliferation and differentiation increased with increasing CA concentration, with MC3T3-E1 cells exhibiting favorable morphologies for bone–implant integration. Conclusions: MAO coating improves the surface characteristics and

  8. Physicochemical properties and in vitro cytocompatibility of modified titanium surfaces prepared via micro-arc oxidation with different calcium concentrations

    International Nuclear Information System (INIS)

    Wu, Sui-Dan; Zhang, Hui; Dong, Xu-Dong; Ning, Cheng-Yun; Fok, Alex S.L.; Wang, Yan

    2015-01-01

    Highlights: • MAO coating improves the surface characteristics and cytocompatibility of titanium. • Composition of MAO coating varies with the electrolyte concentration. • MAO coating properties can be optimized by adjusting the electrolyte concentration. • Higher CA concentration contributes to more favorable MAO coating cytocompatibility. - Abstract: Objective: To explore the effect of calcium concentration in the electrolyte solution on the physicochemical properties and biocompatibility of coatings formed by micro-arc oxidation (MAO) on titanium surfaces. Methods: The surfaces of pure titanium plates were modified by MAO in an electrolytic solution containing calcium acetate (CA; C 4 H 6 CaO 4 ) at concentrations of 0.05, 0.1, 0.2, or 0.3 M and β-glycerophosphate disodium salt pentahydrate (β-GP; C 3 H 7 Na 2 O 6 P·5H 2 O) at a fixed concentration of 0.02 M. Surface topography, elemental characteristics, phase composition, and roughness were investigated by scanning electron microscopy, energy-dispersive X-ray analysis, X-ray diffraction, and a surface roughness tester, respectively. To assess the cytocompatibility and osteoinductivity of the surfaces, MC3T3-E1 preosteoblasts were cultured on the surfaces in vitro, and cell morphology, adhesion, proliferation, and differentiation were observed. Results: The porous MAO coating was composed primarily of TiO 2 rutile and anatase. The amount of TiO 2 rutile, the Ca/P ratio, and the surface roughness of the MAO coating increased with increasing CA concentration in the electrolyte solution. Ca 3 (PO 4 ) 2 , CaCO 3 , and CaTiO 3 were formed on MAO-treated surfaces prepared with CA concentrations of 0.2 and 0.3 M. Cell proliferation and differentiation increased with increasing CA concentration, with MC3T3-E1 cells exhibiting favorable morphologies for bone–implant integration. Conclusions: MAO coating improves the surface characteristics and cytocompatibility of titanium for osseointegration. Higher CA

  9. Surface-potential undulation of Alq3 thin films prepared on ITO, Au, and n-Si.

    Science.gov (United States)

    Ozasa, Kazunari; Ito, Hiromi; Maeda, Mizuo; Hara, Masahiko

    2012-01-01

    The surface potential (SP) morphology on thin films of tris(8-hydroxyquinolinato) aluminum (Alq3) was investigated with Kelvin probe force microscopy. Thin Alq3 films of 100 nm were prepared on ITO/glass substrates, Au/mica substrates, and n-Si substrates. Cloud-like morphologies of the SP undulation with 200-400 nm in lateral size were observed for all three types of the substrates. New larger peaks were observed in the cloud-like morphologies when the surfaces were exposed shortly to a light, while the SP average was reduced monotonically. The nonuniform distribution of charged traps and mobility was deduced from the SP undulation morphology and its photoexposure dependences.

  10. Surface anisotropy of Cr xN1-x films prepared on an inner wall by magnetic sputtering

    International Nuclear Information System (INIS)

    Zeng, F.; Liang, R.; Li, X.W.; Wen, S.P.; Gao, Y.; Gu, Y.L.; Pan, F.

    2007-01-01

    The Cr x N 1-x films were prepared by magnetic sputtering on an inner wall of a column. Their surface morphologies were studied by atomic force microscopy (AFM) and found to be anisotropic. The 3-D AFM images indicate the grains grow upward along the rotational axis of the system. The AFM top views show a mosaic-like pattern for all samples. Analysis of the height-height correlation function demonstrates that correlation length along the rotational axis of the system is longer than that vertical to the axis. The correlation length and RMS roughness increase with the flow rate of N 2 . A deposition model proposed that the shadowing effect of the reactive gas N 2 is the dominant factor for surface anisotropy. The bias added on the substrate is regarded to modulate the grain direction to the rotation axis and enhance roughness and defects

  11. Carrier scattering in metals and semiconductors

    CERN Document Server

    Gantmakher, VF

    1987-01-01

    The transport properties of solids, as well as the many optical phenomena in them are determined by the scattering of current carriers. ``Carrier Scattering in Metals and Semiconductors'' elucidates the state of the art in the research on the scattering mechanisms for current carriers in metals and semiconductors and describes experiments in which these mechanisms are most dramatically manifested.The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental

  12. Preparation of Stable Superhydrophobic Coatings on Wood Substrate Surfaces via Mussel-Inspired Polydopamine and Electroless Deposition Methods

    Directory of Open Access Journals (Sweden)

    Kaili Wang

    2017-06-01

    Full Text Available Mussel-inspired polydopamine (PDA chemistry and electroless deposition approaches were used to prepare stable superhydrophobic coatings on wood surfaces. The as-formed PDA coating on a wood surface exhibited a hierarchical micro/nano roughness structure, and functioned as an “adhesive layer” between the substrate and a metallic film by the metal chelating ability of the catechol moieties on PDA, allowing for the formation of a well-developed micro/nanostructure hierarchical roughness. Additionally, the coating acted as a stable bridge between the substrate and hydrophobic groups. The morphology and chemical components of the prepared superhydrophobic wood surfaces were characterized by scanning electron microscopy (SEM, Fourier transform infrared (FT-IR spectroscopy, and X-ray photoelectron spectroscopy (XPS. The PDA and octadecylamine (OA modified surface showed excellent superhydrophobicity with a water contact angle (CA of about 153° and a rolling angle (RA of about 9°. The CA further increased to about 157° and RA reduced to about 5° with the Cu metallization. The superhydrophobic material exhibited outstanding stability in harsh conditions including ultraviolet aging, ultrasonic washing, strong acid-base and organic solvent immersion, and high-temperature water boiling. The results suggested that the PDA/OA layers were good enough to confer robust, degradation-resistant superhydrophobicity on wood substrates. The Cu metallization was likely unnecessary to provide significant improvements in superhydrophobic property. However, due to the amazing adhesive capacity of PDA, the electroless deposition technique may allow for a wide range of potential applications in biomimetic materials.

  13. Preparation and Evaluation of Surface Modified Lactose Particles for Improved Performance of Fluticasone Propionate Dry Powder Inhaler.

    Science.gov (United States)

    Singh, Deepak J; Jain, Rajesh R; Soni, P S; Abdul, Samad; Darshana, Hegde; Gaikwad, Rajiv V; Menon, Mala D

    2015-08-01

    Dry powder inhalers (DPI) are generally formulated by mixing micronized drug particles with coarse lactose carrier particles to assist powder handling during the manufacturing and powder aerosol delivery during patient use. In the present study, surface modified lactose (SML) particles were produced using force control agents, and their in vitro performance on dry powder inhaler (DPI) formulation of Fluticasone propionate was studied. With a view to reduce surface passivation of high surface free energy sites on the most commonly used DPI carrier, α- lactose monohydrate, effects of various force control agents such as Pluronic F-68, Cremophor RH 40, glyceryl monostearate, polyethylene glycol 6000, magnesium stearate, and soya lecithin were studied. DPI formulations prepared with SML showed improved flow properties, and atomic force microscopy (AFM) studies revealed decrease in surface roughness. The DSC and X-ray diffraction patterns of SML showed no change in the crystal structure and thermal behavior under the experimental conditions. The fine particle fraction (FPF) values of lactose modified with Pluronic F-68, Cremophor RH 40, glyceryl monostearate were improved, with increase in concentration up to 0.5%. Soya lecithin and PEG 6000 modified lactose showed decrease in FPF value with increase in concentration. Increase in FPF value was observed with increasing concentration of magnesium stearate. Two different DPI devices, Rotahaler(®) and Diskhaler(®), were compared to evaluate the performance of SML formulations. FPF value of all SML formulations were higher using both devices as compared to the same formulations prepared using untreated lactose. One month stability of SML formulations at 40°C/75% RH, in permeable polystyrene tubes did not reveal any significant changes in FPF values. SML particles can help in reducing product development hindrances and improve inhalational properties of DPI.

  14. Barium fluoride surface preparation, analysis and UV reflective coatings at Lawrence Livermore National Laboratory

    International Nuclear Information System (INIS)

    Wuest, C.R.

    1992-01-01

    Lawrence Livermore National Laboratory (LLNL) has begun a program of study on barium fluoride scintillating crystals for the Barium Fluoride Electromagnetic Calorimeter Collaboration. This program has resulted in a number of significant improvements in the mechanical processing, polishing and coating of barium fluoride crystals. Techniques have been developed using diamond-loaded pitch lapping that can produce 15 angstrom RMS surface finishes over large areas. These lapped surfaces have been shown to be crystalline using Rutherford Back-scattering (RBS). Also, special polishing fixtures have been designed based on mounting technology developed for the 1.1 m diameter optics used in LLNL's Nova Laser. These fixtures allow as many as five 25--50 cm long barium fluoride crystals to be polished and lapped at a time with the necessary tolerances for the 16,000 crystal Barium Fluoride Calorimeter. In addition, results will be presented on coating barium fluoride with UV reflective layers of magnesium fluoride and aluminum

  15. Preparation and Characterization of Surface Photocatalytic Activity with NiO/TiO2 Nanocomposite Structure

    Directory of Open Access Journals (Sweden)

    Jian-Zhi Chen

    2015-07-01

    Full Text Available This study achieved a nanocomposite structure of nickel oxide (NiO/titanium dioxide (TiO2 heterojunction on a TiO2 film surface. The photocatalytic activity of this structure evaluated by decomposing methylene blue (MB solution was strongly correlated to the conductive behavior of the NiO film. A p-type NiO film of high concentration in contact with the native n-type TiO2 film, which resulted in a strong inner electrical field to effectively separate the photogenerated electron-hole pairs, exhibited a much better photocatalytic activity than the controlled TiO2 film. In addition, the photocatalytic activity of the NiO/TiO2 nanocomposite structure was enhanced as the thickness of the p-NiO film decreased, which was beneficial for the migration of the photogenerated carriers to the structural surface.

  16. Preparation and Characterization of Surface Photocatalytic Activity with NiO/TiO₂ Nanocomposite Structure.

    Science.gov (United States)

    Chen, Jian-Zhi; Chen, Tai-Hong; Lai, Li-Wen; Li, Pei-Yu; Liu, Hua-Wen; Hong, Yi-You; Liu, Day-Shan

    2015-07-13

    This study achieved a nanocomposite structure of nickel oxide (NiO)/titanium dioxide (TiO₂) heterojunction on a TiO₂ film surface. The photocatalytic activity of this structure evaluated by decomposing methylene blue (MB) solution was strongly correlated to the conductive behavior of the NiO film. A p -type NiO film of high concentration in contact with the native n -type TiO₂ film, which resulted in a strong inner electrical field to effectively separate the photogenerated electron-hole pairs, exhibited a much better photocatalytic activity than the controlled TiO₂ film. In addition, the photocatalytic activity of the NiO/TiO₂ nanocomposite structure was enhanced as the thickness of the p -NiO film decreased, which was beneficial for the migration of the photogenerated carriers to the structural surface.

  17. PEO-like Plasma Polymers Prepared by Atmospheric Pressure Surface Dielectric Barrier Discharge

    Czech Academy of Sciences Publication Activity Database

    Gordeev, I.; Choukourov, A.; Šimek, Milan; Prukner, Václav; Biederman, H.

    2012-01-01

    Roč. 9, č. 8 (2012), s. 782-791 ISSN 1612-8850 R&D Projects: GA ČR(CZ) GD104/09/H080 Institutional research plan: CEZ:AV0Z20430508 Keywords : fibrinogen * non-fouling properties * PEO * plasma polymerization * surface dielectric barrier discharge Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 3.730, year: 2012

  18. Preparation and surface functionalisation of poly(styrene maleimide) nanoparticles for bacterial detection

    CSIR Research Space (South Africa)

    Barnard, A

    2012-10-01

    Full Text Available .kashan.co.za] INTRODUCTION The detection of bacteria in water is essential for the prevention of water-borne disease outbreaks. Conventionally, culturing methods are used to detect bacteria in water, whereby the number of bacteria present in a sample is multiplied to a... to the particle surfaces for attachment of fluorescent markers and antibodies. Figure 1: Process diagram of proposed development method of nanoparticles for bacteria detection Particle characterisation was performed with transmission electron microscopy (TEM...

  19. Fabrication and hydrophobic characteristics of micro / nanostructures on polydimethylsiloxane surface prepared by picosecond laser

    Science.gov (United States)

    Bin, Wang; Dong, Shiyun; Yan, Shixing; Gang, Xiao; Xie, Zhiwei

    2018-03-01

    Picosecond laser has ultrashort pulse width and ultrastrong peak power, which makes it widely used in the field of micro-nanoscale fabrication. polydimethylsiloxane (PDMS) is a typical silicone elastomer with good hydrophobicity. In order to further improve the hydrophobicity of PDMS, the picosecond laser was used to fabricate a grid-like microstructure on the surface of PDMS, and the relationship between hydrophobicity of PDMS with surface microstructure and laser processing parameters, such as processing times and cell spacing was studied. The results show that: compared with the unprocessed PDMS, the presence of surface microstructure significantly improved the hydrophobicity of PDMS. When the number of processing is constant, the hydrophobicity of PDMS decreases with the increase of cell spacing. However, when the cell spacing is fixed, the hydrophobicity of PDMS first increases and then decreases with the increase of processing times. In particular, when the times of laser processing is 6 and the cell spacing is 50μm, the contact angle of PDMS increased from 113° to 154°, which reached the level of superhydrophobic.

  20. Non-Equilibrium Plasma Processing for the Preparation of Antibacterial Surfaces

    Directory of Open Access Journals (Sweden)

    Eloisa Sardella

    2016-06-01

    Full Text Available Non-equilibrium plasmas offer several strategies for developing antibacterial surfaces that are able to repel and/or to kill bacteria. Due to the variety of devices, implants, and materials in general, as well as of bacteria and applications, plasma assisted antibacterial strategies need to be tailored to each specific surface. Nano-composite coatings containing inorganic (metals and metal oxides or organic (drugs and biomolecules compounds can be deposited in one step, and used as drug delivery systems. On the other hand, functional coatings can be plasma-deposited and used to bind antibacterial molecules, for synthesizing surfaces with long lasting antibacterial activity. In addition, non-fouling coatings can be produced to inhibit the adhesion of bacteria and reduce the formation of biofilm. This paper reviews plasma-based strategies aimed to reduce bacterial attachment and proliferation on biomedical materials and devices, but also onto materials used in other fields. Most of the activities described have been developed in the lab of the authors.