Theory of coherent time-dependent transport in one-dimensional multiband semiconductor super-lattices

DEFF Research Database (Denmark)

Rotvig, J.; Smith, H.; Jauho, Antti-Pekka

1996-01-01

We present an analytical study of one-dimensional semiconductor superlattices in external electric fields, which may be time dependent. A number of general results for the (quasi)energies and eigenstates are derived. An equation of motion for the density matrix is obtained for a two-band model...

Transport in semiconductor nanowire superlattices described by coupled quantum mechanical and kinetic models.

Science.gov (United States)

Alvaro, M; Bonilla, L L; Carretero, M; Melnik, R V N; Prabhakar, S

2013-08-21

In this paper we develop a kinetic model for the analysis of semiconductor superlattices, accounting for quantum effects. The model consists of a Boltzmann-Poisson type system of equations with simplified Bhatnagar-Gross-Krook collisions, obtained from the general time-dependent Schrödinger-Poisson model using Wigner functions. This system for superlattice transport is supplemented by the quantum mechanical part of the model based on the Ben-Daniel-Duke form of the Schrödinger equation for a cylindrical superlattice of finite radius. The resulting energy spectrum is used to characterize the Fermi-Dirac distribution that appears in the Bhatnagar-Gross-Krook collision, thereby coupling the quantum mechanical and kinetic parts of the model. The kinetic model uses the dispersion relation obtained by the generalized Kronig-Penney method, and allows us to estimate radii of quantum wire superlattices that have the same miniband widths as in experiments. It also allows us to determine more accurately the time-dependent characteristics of superlattices, in particular their current density. Results, for several experimentally grown superlattices, are discussed in the context of self-sustained coherent oscillations of the current density which are important in an increasing range of current and potential applications.

Intraband dynamics and terahertz emission in biased semiconductor superlattices coupled to double far-infrared pulses

International Nuclear Information System (INIS)

Min, Li; Xian-Wu, Mi

2009-01-01

This paper studies both the intraband polarization and terahertz emission of a semiconductor superlattice in combined dc and ac electric fields by using the superposition of two identical time delayed and phase shifted optical pulses. By adjusting the delay between these two optical pulses, our results show that the intraband polarization is sensitive to the time delay. The peak values appear again for the terahertz emission intensity due to the superposition of two optical pulses. The emission lines of terahertz blueshift and redshift in different ac electric fields and dynamic localization appears. The emission lines of THz only appear to blueshift when the biased superlattice is driven by a single optical pulse. Due to excitonic dynamic localization, the terahertz emission intensity decays with time in different dc and ac electric fields. These are features of this superlattice which distinguish it from a superlattice generated by a single optical pulse to drive it. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Fine structure of the exciton electroabsorption in semiconductor superlattices

Energy Technology Data Exchange (ETDEWEB)

Monozon, B.S., E-mail: borismonozon@mail.ru [Physics Department, Marine Technical University, 3 Lotsmanskaya Str., 190008 St.Petersburg (Russian Federation); Schmelcher, P. [Zentrum für Optische Quantentechnologien, The Hamburg Centre for Ultrafast Imaging, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg (Germany)

2017-02-15

Wannier-Mott excitons in a semiconductor layered superlattice (SL) are investigated analytically for the case that the period of the superlattice is much smaller than the 2D exciton Bohr radius. Additionally we assume the presence of a longitudinal external static electric field directed parallel to the SL axis. The exciton states and the optical absorption coefficient are derived in the tight-binding and adiabatic approximations. Strong and weak electric fields providing spatially localized and extended electron and hole states, respectively, are studied. The dependencies of the exciton states and the exciton absorption spectrum on the SL parameters and the electric field strength are presented in an explicit form. We focus on the fine structure of the ground quasi-2D exciton level formed by the series of closely spaced energy levels adjacent from the high frequencies. These levels are related to the adiabatically slow relative exciton longitudinal motion governed by the potential formed by the in-plane exciton state. It is shown that the external electric fields compress the fine structure energy levels, decrease the intensities of the corresponding optical peaks and increase the exciton binding energy. A possible experimental study of the fine structure of the exciton electroabsorption is discussed.

Dresselhaus spin-orbit coupling induced spin-polarization and resonance-split in n-well semiconductor superlattices

International Nuclear Information System (INIS)

Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.

2009-01-01

Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure

Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice.

Science.gov (United States)

Bonilla, L L; Carretero, M; Segura, A

2017-12-01

When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice

Science.gov (United States)

Bonilla, L. L.; Carretero, M.; Segura, A.

2017-12-01

When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

Band structure of superlattice with δ-like potential

International Nuclear Information System (INIS)

Gashimzade, N.F.; Gashimzade, F.M.; Hajiev, A.T.

1993-08-01

Band structure of superlattice with δ-like potential has been calculated taking into account interaction of carriers of different kinds. Superlattices of semiconductors with degenerated valence band and zero-gap semiconductors have been considered. For the latter semimetal-semiconductor transition has been obtained. (author). 8 refs, 1 fig

Theory of the negative differential conductivity effect in semiconductor superlattices

International Nuclear Information System (INIS)

Vo Hong Anh; Nguyen Hong Shon; Le Vu Ky

1990-01-01

A new mechanism of the negative differential conductivity (NDC) effect in semiconductor superlattices (SL) is proposed and analysed that is due to the conduction electron trapping by donor centers. It is shown that the NDC effect occurs for sufficently high (but reasonable) impurity concentration and not too large value of the τ ε /τ c ratio (where τ ε is the electron energy relaxation time and τ c the electron life time in the conduction band) when the applied d.c. electric field reaches certain critical value defined by the physical parameters of the sample. (author). 8 refs, 2 figs

Maximum Entropy Closure of Balance Equations for Miniband Semiconductor Superlattices

Directory of Open Access Journals (Sweden)

Luis L. Bonilla

2016-07-01

Full Text Available Charge transport in nanosized electronic systems is described by semiclassical or quantum kinetic equations that are often costly to solve numerically and difficult to reduce systematically to macroscopic balance equations for densities, currents, temperatures and other moments of macroscopic variables. The maximum entropy principle can be used to close the system of equations for the moments but its accuracy or range of validity are not always clear. In this paper, we compare numerical solutions of balance equations for nonlinear electron transport in semiconductor superlattices. The equations have been obtained from Boltzmann–Poisson kinetic equations very far from equilibrium for strong fields, either by the maximum entropy principle or by a systematic Chapman–Enskog perturbation procedure. Both approaches produce the same current-voltage characteristic curve for uniform fields. When the superlattices are DC voltage biased in a region where there are stable time periodic solutions corresponding to recycling and motion of electric field pulses, the differences between the numerical solutions produced by numerically solving both types of balance equations are smaller than the expansion parameter used in the perturbation procedure. These results and possible new research venues are discussed.

Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

Energy Technology Data Exchange (ETDEWEB)

Kowarik, S.; Weber, C. [Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin (Germany); Hinderhofer, A.; Gerlach, A.; Schreiber, F. [Universität Tübingen, Institut für Angewandte Physik, Auf der Morgenstelle 10, 72076 Tübingen (Germany); Wang, C.; Hexemer, A. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Leone, S. R. [Departments of Chemistry and Physics, University of California, and Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

2015-11-15

Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs) of the organic semiconductors pentacene (PEN) and perfluoro-pentacene (PFP). Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.

Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

Directory of Open Access Journals (Sweden)

S. Kowarik

2015-11-01

Full Text Available Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs of the organic semiconductors pentacene (PEN and perfluoro-pentacene (PFP. Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.

Materials science and technology strained-layer superlattices materials science and technology

CERN Document Server

Pearsall, Thomas P; Willardson, R K; Pearsall, Thomas P

1990-01-01

The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting ...

Photostimulated attenuation of hypersound in superlattice

International Nuclear Information System (INIS)

Mensah, S.Y.; Allotey, F.K.; Adjepong, S.K.

1992-10-01

Photostimulated attenuation of hypersound in semiconductor superlattice has been investigated. It is shown that the attenuation coefficient depends on the phonon wave vector q in an oscillatory manner and that from this oscillation the band width Δ of superlattice can be found. (author). 14 refs, 1 fig

Thermal conductivity and heat transfer in superlattices

Energy Technology Data Exchange (ETDEWEB)

Chen, G; Neagu, M; Borca-Tasciuc, T

1997-07-01

Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and devices based on quantum structures. This work reports progress on the modeling of thermal conductivity of superlattice structures. Results from the models established based on the Boltzmann transport equation could explain existing experimental results on the thermal conductivity of semiconductor superlattices in both in plane and cross-plane directions. These results suggest the possibility of engineering the interfaces to further reduce thermal conductivity of superlattice structures.

Wave-function reconstruction in a graded semiconductor superlattice

DEFF Research Database (Denmark)

Lyssenko, V. G.; Hvam, Jørn Märcher; Meinhold, D.

2004-01-01

We reconstruct a test wave function in a strongly coupled, graded well-width superlattice by resolving the spatial extension of the interband polarisation and deducing the wave function employing non-linear optical spectroscopy. The graded gap superlattice allows us to precisely control the dista...

Electronic structure of superlattices of graphene and hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.

2011-11-14

We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

Electronic structure of superlattices of graphene and hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo

2011-01-01

We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

Bi-continuous Multi-component Nanocrystal Superlattices for Solar Energy Conversion

Energy Technology Data Exchange (ETDEWEB)

Kagan, Cherie [University of Pennsylvania; Murray, Christopher [University of Pennsylvania; Kikkawa, James [University of Pennsylvania; Engheta, Nader [University of Pennsylvania

2017-06-14

Our SISGR program studied an emerging class of nanomaterials wherein different combinations of semiconductor or semiconductor and plasmonic nanocrystals (NCs) are self-assembled into three-dimensional multi-component superlattices. The NC assemblies were designed to form bicontinuous semiconductor NC sublattices with type-II energy offsets to drive charge separation onto electron and hole transporting sublattices for collection and introduce plasmonic NCs to increase solar absorption and charge separation. Our group is expert in synthesizing and assembling an extraordinary variety of artificial systems by tailoring the NC building blocks and the superlattice unit cell geometry. Under this DOE BES Materials Chemistry program, we introduced chemical methods to control inter-particle distance and to dope NC assemblies, which enabled our demonstration of strong electronic communication between NCs and the use of NC thin films as electronic materials. We synthesized, assembled and structurally, spectroscopically, and electrically probed NC superlattices to understand and manipulate the flow of energy and charge toward discovering the design rules and optimizing these complex architectures to create materials that efficiently convert solar radiation into electricity.

Electronic structure of superlattices

International Nuclear Information System (INIS)

Altarelli, M.

1987-01-01

Calculations of electronic states in semiconductor superlattices are briefly reviewed, with emphasis on the envelope-function method and on comparison with experiments. The energy levels in presence of external magnetic fields are discussed and compared to magneto-optical experiments. (author) [pt

Transport and spin effects in homogeneous magnetic superlattice

International Nuclear Information System (INIS)

Cardoso, J.L.; Pereyra, P.; Anzaldo-Meneses, A.

2000-09-01

Homogeneous semiconductors under spacially periodic external magnetic fields exhibit spin-band splitting and displacements, more clearly defined than in diluted magnetic semiconductor superlattices. We study the influence of the geometrical parameters and the spin-field interaction on the electronic transport properties. We show that by varying the external magnetic field, one can easily block the transmission of either the spin-up or the spin-down electrons. (author)

Tunneling in quantum superlattices with variable lacunarity

Energy Technology Data Exchange (ETDEWEB)

Villatoro, Francisco R. [Departamento de Lenguajes y Ciencias de la Computacion, Universidad de Malaga, E-29071 Malaga (Spain); Monsoriu, Juan A. [Departamento de Fisica Aplicada, Universidad Politecnica de Valencia, E-46022 Valencia (Spain)], E-mail: jmonsori@fis.upv.es

2008-05-19

Fractal superlattices are composite, aperiodic structures comprised of alternating layers of two semiconductors following the rules of a fractal set. The scattering properties of polyadic Cantor fractal superlattices with variable lacunarity are determined. The reflection coefficient as a function of the particle energy and the lacunarity parameter present tunneling curves, which may be classified as vertical, arc, and striation nulls. Approximate analytical formulae for such curves are derived using the transfer matrix method. Comparison with numerical results shows good accuracy. The new results may be useful in the development of band-pass energy filters for electrons, semiconductor solar cells, and solid-state radiation sources up to THz frequencies.

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Phonon-induced optical superlattice.

Science.gov (United States)

de Lima, M M; Hey, R; Santos, P V; Cantarero, A

2005-04-01

We demonstrate the formation of a dynamic optical superlattice through the modulation of a semiconductor microcavity by stimulated acoustic phonons. The high coherent phonon population produces a folded optical dispersion relation with well-defined energy gaps and renormalized energy levels, which are accessed using reflection and diffraction experiments.

Collective excitations in semiconductor superlattices and plasma modes of a two-dimensional electron gas with spatially modulated charge density

International Nuclear Information System (INIS)

Eliasson, G.L.

1987-01-01

The theory of collective excitations in semiconductor superlattices is formulated by using linear response theory. Different kinds of collective excitations in type I (GaAs-GaAlAs) and type II (GaSb-InAs) superlattices are surveyed. Special attention is paid to the presence of surface and finite-size effects. In calculating the dielectric matrix, the effect of different approximations of the system is discussed. The theory for inelastic length scattering (Raman scattering), and for Electron Energy Loss (EEL) due to collective excitations, is formulated. Calculations for several model systems are presented and the main features of the spectra are discussed. In part II the theory of collective excitations of a two-dimensional electron gas with a spatially periodic equilibrium density is formulated. As a first example a periodic array of two-dimensional electron gas strips with constant equilibrium density is studied. The integral equation that describes the charge fluctuations on the strips is derived and solved numerically. The spatial dependence of the density fluctuation across a single strip can be in the form of either propagating or evanescent waves

Possible THz gain in superlattices at a stable operation point

DEFF Research Database (Denmark)

Wacker, Andreas; Allen, S. J.; Scott, J. S.

1997-01-01

We demonstrate that semiconductor superlattices may provide gain at THz frequencies at an operation point which is stable against fluctuations at lower frequency. While an explicit experimental demonstration for the sample considered could not be achieved, the underlying principle of quantum resp...... response is quite general and may prove successful for differently designed superlattices....

Magnetization study of interlayer exchange in semiconductor EuS-PbS ferromagnetic wedge multilayers

International Nuclear Information System (INIS)

Kowalczyk, L.; Osinniy, V.; Chernyshova, M.; Dziawa, P.; Boratynski, A.; Story, T.; Smits, C.J.P.; Swagten, H.J.M.; Sipatov, A.Yu.; Volobuev, V.V.

2006-01-01

Interlayer coupling was experimentally studied in semiconductor EuS-PbS ferromagnetic superlattice wedge structures grown on KCl (0 0 1) substrates with the wedges covering the semiconductor nonmagnetic PbS spacer layer thickness from 0.3 to 6 nm. Structural parameters of the wedges were examined by X-ray diffraction analysis of EuS-PbS superlattice period. Measurements of magnetic hysteresis loops of EuS-PbS structures were performed by both SQUID (for small terminal parts of the wedge) and MOKE (magneto-optical analysis along the wedge) magnetometry. A strong decrease of magnetic remanence and an increase of saturation field observed for EuS-PbS structures with the PbS spacer thickness decreasing below about 1.5 nm is discussed in terms of the influence of antiferromagnetic interlayer coupling

Electronic properties of superlattices on quantum rings.

Science.gov (United States)

da Costa, D R; Chaves, A; Ferreira, W P; Farias, G A; Ferreira, R

2017-04-26

We present a theoretical study of the one-electron states of a semiconductor-made quantum ring (QR) containing a series of piecewise-constant wells and barriers distributed along the ring circumference. The single quantum well and the superlattice cases are considered in detail. We also investigate how such confining potentials affect the Aharonov-Bohm like oscillations of the energy spectrum and current in the presence of a magnetic field. The model is simple enough so as to allow obtaining various analytical or quasi-analytical results. We show that the well-in-a-ring structure presents enhanced localization features, as well as specific geometrical resonances in its above-barrier spectrum. We stress that the superlattice-in-a-ring structure allows giving a physical meaning to the often used but usually artificial Born-von-Karman periodic conditions, and discuss in detail the formation of energy minibands and minigaps for the circumferential motion, as well as several properties of the superlattice eigenstates in the presence of the magnetic field. We obtain that the Aharonov-Bohm oscillations of below-barrier miniband states are reinforced, owing to the important tunnel coupling between neighbour wells of the superlattice, which permits the electron to move in the ring. Additionally, we analysis a superlattice-like structure made of a regular distribution of ionized impurities placed around the QR, a system that may implement the superlattice in a ring idea. Finally, we consider several random disorder models, in order to study roughness disorder and to tackle the robustness of some results against deviations from the ideally nanostructured ring system.

Wave refraction and backward magnon-plasmon polaritons in left-handed antiferromagnet/semiconductor superlattices

International Nuclear Information System (INIS)

Tarkhanyan, R.H.; Niarchos, D.G.

2007-01-01

Characteristics of the bulk electromagnetic waves in teraHertz frequency region are examined in a left-handed superlattice (SL) which consists of alternating layers of nonmagnetic semiconductor and nonconducting antiferromagnetic materials. General problem on the sign of the refractive index for anisotropic media is considered. It is shown that the phase refraction index is always positive while the group refractive index can be negative when some general conditions are fulfilled. Effective permittivity and permeability tensors of the SL are derived for perpendicular and parallel orientation of the magnetic anisotropy axis with respect to the plane of the layers. Problem of anomalous refraction for transverse electric and transverse magnetic-type polarized waves is examined in such media. Analytical expressions for both the phase and group refractive indices are obtained for various propagated modes. It is shown that, in general, three different types of the refracted waves with different relative orientation of the phase and group velocity vectors are possible in left-handed media. Unusual peculiarities of the backward modes corresponding to the coupled magnon-plasmon polaritons are considered. It is shown, in particular, that the number of the backward modes depends on the free charge carrier's density in semiconductor layers, variation of which allows to create different frequency regions for the wave propagation

II-VI semiconductor compounds

CERN Document Server

1993-01-01

For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

Organic p-n heterostructures and superlattices

Energy Technology Data Exchange (ETDEWEB)

Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

2009-07-01

For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

Science.gov (United States)

Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

1987-06-08

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.

Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors

International Nuclear Information System (INIS)

Blumers, Mathias

2012-01-01

The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S 2 .σ/k, where S is the Seebeck-coefficient, σ is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb 1-x Sr x Te and Bi 2 (Se x Te 1-x ) 3 , respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, σ and κ parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,σ,κ) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

Calculation of Energy Diagram of Asymmetric Graded-Band-Gap Semiconductor Superlattices.

Science.gov (United States)

Monastyrskii, Liubomyr S; Sokolovskii, Bogdan S; Alekseichyk, Mariya P

2017-12-01

The paper theoretically investigates the peculiarities of energy diagram of asymmetric graded-band-gap superlattices with linear coordinate dependences of band gap and electron affinity. For calculating the energy diagram of asymmetric graded-band-gap superlattices, linearized Poisson's equation has been solved for the two layers forming a period of the superlattice. The obtained coordinate dependences of edges of the conduction and valence bands demonstrate substantial transformation of the shape of the energy diagram at changing the period of the lattice and the ratio of width of the adjacent layers. The most marked changes in the energy diagram take place when the period of lattice is comparable with the Debye screening length. In the case when the lattice period is much smaller that the Debye screening length, the energy diagram has the shape of a sawtooth-like pattern.

Hot electrons in superlattices: quantum transport versus Boltzmann equation

DEFF Research Database (Denmark)

Wacker, Andreas; Jauho, Antti-Pekka; Rott, S.

1999-01-01

A self-consistent solution of the transport equation is presented for semiconductor superlattices within different approaches: (i) a full quantum transport model based on nonequilibrium Green functions, (ii) the semiclassical Boltzmann equation for electrons in a miniband, and (iii) Boltzmann...

Quantum Transport: The Link between Standard Approaches in Superlattices

DEFF Research Database (Denmark)

Wacker, Andreas; Jauho, Antti-Pekka

1998-01-01

Theories describing electrical transport in semiconductor superlattices can essentially be divided in three disjoint categories: (i) transport in a miniband; (ii) hopping between Wannier-Stark ladders; and (iii) sequential tunneling. We present a quantum transport model, based on nonequilibrium G...

) m /SrVO3 ( m = 5, 6) Superlattices

KAUST Repository

Dai, Qingqing; Lü ders, Ulrike; Fré sard, Raymond; Eckern, Ulrich; Schwingenschlö gl, Udo

2018-01-01

The (LaV3+O3)m/SrV4+O3 (m = 5, 6) superlattices are investigated by first principles calculations. While bulk LaVO3 is a C‐type antiferromagnetic semiconductor and bulk SrVO3 is a paramagnetic metal, semiconducting A‐type antiferromagnetic states

Superlattices: problems and new opportunities, nanosolids

Directory of Open Access Journals (Sweden)

Tsu Raphael

2011-01-01

Full Text Available Abstract Superlattices were introduced 40 years ago as man-made solids to enrich the class of materials for electronic and optoelectronic applications. The field metamorphosed to quantum wells and quantum dots, with ever decreasing dimensions dictated by the technological advancements in nanometer regime. In recent years, the field has gone beyond semiconductors to metals and organic solids. Superlattice is simply a way of forming a uniform continuum for whatever purpose at hand. There are problems with doping, defect-induced random switching, and I/O involving quantum dots. However, new opportunities in component-based nanostructures may lead the field of endeavor to new heights. The all important translational symmetry of solids is relaxed and local symmetry is needed in nanosolids.

Wave fronts, pulses and wave trains in photoexcited superlattices behaving as excitable or oscillatory media

International Nuclear Information System (INIS)

Arana, J I; Bonilla, L L; Grahn, H T

2011-01-01

Undoped and strongly photoexcited semiconductor superlattices with field-dependent recombination behave as excitable or oscillatory media with spatially discrete nonlinear convection and diffusion. Infinitely long, dc-current-biased superlattices behaving as excitable media exhibit wave fronts with increasing or decreasing profiles, whose velocities can be calculated by means of asymptotic methods. These superlattices can also support pulses of the electric field. Pulses moving downstream with the flux of electrons can be constructed from their component wave fronts, whereas pulses advancing upstream do so slowly and experience saltatory motion: they change slowly in long intervals of time separated by fast transitions during which the pulses jump to the previous superlattice period. Photoexcited superlattices can also behave as oscillatory media and exhibit wave trains. (paper)

Submillimetre wave spectroscopy of semiconductors in high magnetic fields

International Nuclear Information System (INIS)

Maan, J.C.

1979-01-01

Two types of cyclotron resonance studies with far infrared radiation and at high magnetic fields in semiconductors are discussed. Firstly, the phenomenon of the change in the static conductivity at cyclotron resonance conditions in pure semiconductors, in this case n-GaAs, is investigated. Secondly, the results of cyclotron resonance experiments in an n-InAs-GaSb superlattice are discussed. (Auth.)

Recent results on heterojunctions and superlattices: transport and optics

International Nuclear Information System (INIS)

Voos, M.

1983-01-01

Recent experimental results obtained on two-dimensional semiconductor structures, namely heterojunctions and superlattices are presented. This review, which includes both optical and transport experiments, is not exhaustive, but describes briefly some investigations which are thought to be important from the point of view of fundamental physics. (Author) [pt

Electronic states in tunneling semiconductor superlattices: Technical progress report for the period September 15, 1987-September 14, 1988

International Nuclear Information System (INIS)

Ulloa, S.E.

1988-01-01

This research project funded by DOE has concentrated in the systematic study of the effects of a gate voltage on the electronic structure of a tunneling superlattice system. The effects of strong magnetic fields and other various parameters on energy levels of tunneling superlattices have been investigated

Ballistic spin filtering across the ferromagnetic-semiconductor interface

Directory of Open Access Journals (Sweden)

Y.H. Li

2012-03-01

Full Text Available The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical model for the ballistic spin filtering across the interface between ferromagnetic metals and semiconductor superlattice is developed by exciting the spin polarized electrons into n-type AlAs/GaAs superlattice layer at a much higher energy level and then ballistically tunneling through the barrier into the ferromagnetic film. Since both the helicity-modulated and static photocurrent responses are experimentally measurable quantities, the physical quantity of interest, the relative asymmetry of spin-polarized tunneling conductance, could be extracted experimentally in a more straightforward way, as compared with previous models. The present physical model serves guidance for studying spin detection with advanced performance in the future.

Structure of highly perfect semiconductor strained-layer superlattices

International Nuclear Information System (INIS)

Vandenberg, J.M.

1989-01-01

High-resolution x-ray diffraction (HRXRD) measurements of strained-layer superlattices (SLS's) have been carried out using a four-crystal monochromator. A wide asymmetric range of sharp higher-order x-ray satellite peaks is observed indicating well-defined periodic structures. Using a kinematical diffraction step model very good agreement between measured and simulated x-ray satellite patterns could be achieved. These results show that this x- ray method is a powerful tool to evaluate the crystal quality of SLS's

Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

KAUST Repository

Sarath Kumar, S. R.; Hedhili, Mohamed N.; Cha, Dong Kyu; Tritt, Terry M.; Alshareef, Husam N.

2014-01-01

A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

KAUST Repository

Sarath Kumar, S. R.

2014-04-22

A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

Infrared studies of impurity states and ultrafast carrier dynamics in semiconductor quantum structures

Energy Technology Data Exchange (ETDEWEB)

Stehr, D.

2007-12-28

This thesis deals with infrared studies of impurity states, ultrafast carrier dynamics as well as coherent intersubband polarizations in semiconductor quantum structures such as quantum wells and superlattices, based on the GaAs/AlGaAs material system. In the first part it is shown that the 2p{sub z} confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. These results also require reinterpretation of previous experimental data. The relaxation dynamics of interminiband transitions in doped GaAs/AlGaAs superlattices in the mid-IR are studied. This involves single-color pump-probe measurements to explore the dynamics at different wavelengths, which is performed with the Rossendorf freeelectron laser (FEL), providing picosecond pulses in a range from 3-200 {mu}m and are used for the first time within this thesis. In these experiments, a fast bleaching of the interminiband transition is observed followed by thermalization and subsequent relaxation, whose time constants are determined to be 1-2 picoseconds. This is followed by an additional component due to carrier cooling in the lower miniband. In the second part, two-color pump-probe measurements are performed, involving the FEL as the pump source and a table-top broad-band tunable THz source for probing the transmission changes. In addition, the dynamics of excited electrons within the minibands is explored and their contribution quantitatively extracted from the measurements. Intersubband absorption experiments of photoexcited carriers in single quantum well structures, measured directly in the time-domain, i.e. probing coherently the polarization between the first and the second subband, are presented. By varying the carrier

Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

Energy Technology Data Exchange (ETDEWEB)

Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)

2013-12-21

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

International Nuclear Information System (INIS)

Ji, Pengfei; Zhang, Yuwen; Yang, Mo

2013-01-01

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective

Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

Science.gov (United States)

Ji, Pengfei; Zhang, Yuwen; Yang, Mo

2013-12-01

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

Capacitance-Voltage (CV) Measurement of Type-2 Superlattice Photodiodes

Science.gov (United States)

2016-01-05

Department of Defense position, policy, or decision. CQD Contents 1. Background and Motivation ...1. Background and Motivation 1.1. Development of Type-II superalttice Type-II InAs/GaSb superlattices (T2SLs) were first proposed by Sai-Halasz et...equals the ionized impurity concentration. In such case, the semiconductor is under extrinsic regime, and the dynamic of mobile carriers depends on

CCST [Center for Compound Semiconductor Technology] research briefs

International Nuclear Information System (INIS)

Zipperian, T.E.; Voelker, E.R.

1989-12-01

This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

Pulsed field studies of magnetotransport in semiconductor heterostructures

International Nuclear Information System (INIS)

Dalton, K.S.H.

1999-01-01

High field magnetotransport in two classes of semiconductor heterostructures has been studied: parallel transport in InAs/(Ga,In)Sb double heterojunctions and superlattices at low temperatures (300 mK-4.2 K), and vertical transport in GaAs/AlAs short-period superlattices at 150-300 K. The experiments mainly used the Oxford pulsed magnet (∼45 T, ∼15 ms pulses). The development of the data acquisition system and experimental techniques for magnetotransport are described, including corrections to the data, required because of the rapidly changing magnetic field. Previous studies of magnetotransport in InAs/GaSb double heterojunctions are reviewed: this electron-hole system shows compensated quantum Hall plateaux, with ρ xy dips accompanied by 'anomalous' peaks in σ xx . New data show a peak between ν=1 plateaux; this behaviour and the temperature dependence of the 'anomalous' σ xx peaks are explained by considering the movement of the Fermi level amongst anticrossing electron- and hole-like levels. InAs/(Ga,In)Sb superlattices with electron:hole density ratios close to 1 exhibit large oscillations in the resistivity (maxima typically ∼20-30 x higher than minima) and conductivity components. Deep minima in ρ xy alternate with low-integer plateaux. The magnetotransport in various ideal structures is considered, to explain the experimental results. The growth of a novel structure has allowed clearer observation of the behaviour of ρ xx (giant maxima) and ρ xy (zeroes or maxima) when the contributions from each well to σ xx and σ xy approach zero. Measurements of the high field magnetotransport peak positions show that the band overlap is increased by growing 'InSb' rather than 'GaAs' interfaces (∼20% increase), increasing the indium in the (Ga,In)Sb (∼30% increase per 10% In), or growing along [111] instead of [001] (∼30% increase). Magnetophonon resonance in short-period GaAs/AlAs superlattices causes strong, electric field-dependent vertical

) m /SrVO3 ( m = 5, 6) Superlattices

KAUST Repository

Dai, Qingqing

2018-05-04

The (LaV3+O3)m/SrV4+O3 (m = 5, 6) superlattices are investigated by first principles calculations. While bulk LaVO3 is a C‐type antiferromagnetic semiconductor and bulk SrVO3 is a paramagnetic metal, semiconducting A‐type antiferromagnetic states for both superlattices are found due to epitaxial strain. At the interfaces, however, the V spins couple antiferromagnetically for m = 5 and ferromagnetically for m = 6 (m‐dependence of the magnetization). Electronic reconstruction in form of charge ordering is predicted to occur with V3+ and V4+ states arranged in a checkerboard pattern on both sides of the SrO layer. As compared to bulk LaVO3, the presence of V4+ ions introduces in‐gap states that strongly reduce the bandgap and influence the orbital occupation and ordering.

Morphological Instability in InAs/GaSb Superlattices due to Interfacial Bonds

International Nuclear Information System (INIS)

Li, J.H.; Moss, S.C.; Stokes, D.W.; Caha, O.; Bassler, K.E.; Ammu, S.L.; Bai, J.

2005-01-01

Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds. It is found that the morphological instability that occurs in the nanowire array results from the large misfit strain that the InSb interfacial bonds have in the nanowire array. Based on this result, we propose that tailoring the type of interfacial bonds during the epitaxial growth of III-V semiconductor films provides a novel approach for producing the technologically important morphological instability in anomalously thin layers

Theoretical study of nitride short period superlattices

Science.gov (United States)

Gorczyca, I.; Suski, T.; Christensen, N. E.; Svane, A.

2018-02-01

Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and nonpolar) and different strain conditions (free-standing and pseudomorphic) all the factors influencing the band gap engineering are analyzed. Dependence on internal strain and lattice geometry is considered, but the main attention is devoted to the influence of the internal electric field and the hybridization of well and barrier wave functions. The contributions of these two important factors to band gap behavior are illustrated and estimated quantitatively. It appears that there are two interesting ranges of layer thicknesses; in one (few atomic monolayers in barriers and wells) the influence of the wave function hybridization is dominant, whereas in the other (layers thicker than roughly five to six monolayers) dependence of electric field on the band gaps is more important. The band gap behavior in superlattices is compared with the band gap dependence on composition in the corresponding ternary and quaternary alloys. It is shown that for superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary alloys. The calculated values of the band gaps are compared with the photoluminescence emission energies, when the corresponding data are available. Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.

Intraband absorption in GaAs-(Ga,Al)As variably spaced semiconductor superlattices under crossed electric and magnetic fields

Science.gov (United States)

Reyes-Gómez, E.; Raigoza, N.; Oliveira, L. E.

2013-11-01

A theoretical study of the intraband absorption properties of GaAs-Ga1-xAlxAs variably spaced semiconductor superlattices under crossed magnetic and electric fields is presented. Calculations are performed for the applied electric field along the growth-axis direction, whereas the magnetic field is considered parallel to the heterostructure layers. By defining a critical electric field so that the heterostructure energy levels are aligned in the absence of the applied magnetic fields, one finds that, in the weak magnetic-field regime, an abrupt red shift of the absorption coefficient maxima is obtained at fields equal to or larger than the critical electric field, a fact which may be explained from the localization properties of the electron wave functions. Results in the strong magnetic-field regime reveal a rich structure on the intraband absorption coefficient which may be explained from the strong dispersion exhibited by both the energy levels and transition strengths as functions of the generalized orbit-center position. Moreover, the possibility of occurrence of absorption in a wide frequency range is also demonstrated. Present calculated results may be of interest for future design and improvement of multilayered-based photovoltaic and solar-cell devices.

Monolayer atomic crystal molecular superlattices

Science.gov (United States)

Wang, Chen; He, Qiyuan; Halim, Udayabagya; Liu, Yuanyue; Zhu, Enbo; Lin, Zhaoyang; Xiao, Hai; Duan, Xidong; Feng, Ziying; Cheng, Rui; Weiss, Nathan O.; Ye, Guojun; Huang, Yun-Chiao; Wu, Hao; Cheng, Hung-Chieh; Shakir, Imran; Liao, Lei; Chen, Xianhui; Goddard, William A., III; Huang, Yu; Duan, Xiangfeng

2018-03-01

Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 107, along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

Transfer matrix theory of monolayer graphene/bilayer graphene heterostructure superlattice

International Nuclear Information System (INIS)

Wang, Yu

2014-01-01

We have formulated a transfer matrix method to investigate electronic properties of graphene heterostructure consisting of monolayer graphene and bilayer counterpart. By evaluating transmission, conductance, and band dispersion, we show that, irrespective of the different carrier chiralities in monolayer graphene and bilayer graphene, superlattice consisting of biased bilayer graphene barrier and monolayer graphene well can mimic the electronic properties of conventional semiconductor superlattice, displaying the extended subbands in the quantum tunneling regime and producing anisotropic minigaps for the classically allowed transport. Due to the lateral confinement, the lowest mode has shifted away from the charge neutral point of monolayer graphene component, opening a sizeable gap in concerned structure. Following the gate-field and geometry modulation, all electronic states and gaps between them can be externally engineered in an electric-controllable strategy.

Magneto-transport studies of InAs/GaSb short period superlattices

International Nuclear Information System (INIS)

Broadley, Victoria Jane

2002-01-01

This thesis studies the transport properties of short period semiconducting InAs/GaSb superlattices in the presence of strong electric and magnetic fields applied parallel to the growth axis. Electrical transport parallel to the growth axis occurs through the superlattice miniband, which have widths varying from three to 30meV. Resonant scattering between confined Landau levels and Stark levels is observed at low temperatures (4.2K). In addition LO-phonon assisted scattering between Landau levels is observed in both type-I GaAs/AIAs and type-ll inAs/GaSb superlattices, which are enhanced in the type-ll system due to the strong interband coupling. K·p band structure calculations show that the interband coupling causes the superlattice miniband energy dispersion to be strongly dependent on the in-plane wavevector and the applied magnetic field. For large applied electric fields, where the miniband is split into discrete Stark levels, strong stark-cyclotron resonance (SCR) features are observed, which occur when the Landau level separation equals to the stark level separation. These resonances are enhanced when compared to SCR in type-I superlattices due to the suppression of miniband conduction in higher lying Landau levels. At low electric fields electrical transport through the superlattice miniband yields characteristic miniband transport features, which are modelled using the Esaki-Tsu miniband transport model. Strong electron - LO-phonon scattering is also observed in InAs/GaSb superlattices, where we report the first observation of miniband transport assisted via the emission of LO-phonons between stark levels in adjacent wells. Below 50K thermally activated behaviour is reported and at high magnetic fields (in the quantum limit) complete localisation of carriers is observed. In this regime LO-phonon delocalised transport in also observed. (author)

Magnetism in lanthanide superlattices

DEFF Research Database (Denmark)

Goff, J.P.; Sarthour, R.S.; McMorrow, D.F.

2000-01-01

Neutron diffraction studies of heavy rare-earth superlattices have revealed the stabilization of novel magnetic phases chat are not present in bulk materials. The most striking result is the propagation of the magnetic ordering through nonmagnetic spacer materials. Here we describe some recent X......-ray magnetic resonant scattering studies of light rare-earth superlattices, which illuminate the mechanism of interlayer coupling, and provide access to different areas of Physics. such as the interplay between superconductivity and magnetism. Magnetic X-ray diffraction is found to be particularly well suited...... to the study of the modulated magnetic structures in superlattices, and provides unique information on the conduction-electron spin-density wave responsible for the propagation of magnetic order. (C) 2000 Elsevier Science B.V. All rights reserved....

Photoelectronic properties of semiconductors

CERN Document Server

Bube, Richard H

1992-01-01

The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

The 2-6 semiconductor superlattices

Science.gov (United States)

Gunshor, R. L.; Otsuka, N.

1992-12-01

The first operational semiconductor diode lasers were demonstrated in the summer of 1991 independently by two U.S. groups, one at 3M and the other a team effort shared by Purdue and Brown Universities. As a result of the close collaboration between MBE and TEM groups within the grant, the structures for lasing and LED (as well as display device) operation were realized with the lowest defect concentrations ever reported for 2-6 structures grown on GaAs by MBE. The reduction of the dislocation levels resulted from an iterative process where the growth could be modified in response to the TEM analysis. The AFOSR funded interface studies have led to our appreciation of the electrical and microstructural considerations obtaining at 2-6/3-5 heterovalent interfaces. As a result the Purdue/Brown group has had equal success in making laser diodes with substrates of both doping types. The Purdue/Brown collaboration has obtained CW operations at 77 K as well as pulsed operation at room temperature using a Zn(S,Se)-based device configuration emitting in the blue (490 nm at room temperature).

Semiconductor physics an introduction

CERN Document Server

Seeger, Karlheinz

1999-01-01

Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

Hypersonic modes in nanophononic semiconductors.

Science.gov (United States)

Hepplestone, S P; Srivastava, G P

2008-09-05

Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

Strain-tunable half-metallicity in hybrid graphene-hBN monolayer superlattices

International Nuclear Information System (INIS)

Meng, Fanchao; Zhang, Shiqi; Lee, In-Ho; Jun, Sukky; Ciobanu, Cristian V.

2016-01-01

Highlights: • Armchair superlattices have a bandgap modulated by the deformed domain widths. • Strain and domain width lead to novel spin-dependent behavior for zigzag boundaries. • Limits for spin-dependent bandgap and half-metallic behavior have been charted. - Abstract: As research in 2-D materials evolves toward combinations of different materials, interesting electronic and spintronic properties are revealed and may be exploited in future devices. A way to combine materials is the formation of spatially periodic domain boundaries in an atom-thick monolayer: as shown in recent reports, when these domains are made of graphene and hexagonal boron nitride, the resulting superlattice has half-metallic properties in which one spin component is (semi)metallic and the other is semiconductor. We explore here the range of spin-dependent electronic properties that such superlattices can develop for different type of domain boundaries, domain widths, and values of tensile strain applied to the monolayer. We show evidence of an interplay between strain and domain width in determining the electronic properties: while for armchair boundaries the bandgap is the same for both spin components, superlattices with zigzag boundaries exhibit rich spin-dependent behavior, including different bandgaps for each spin component, half-metallicity, and reversal of half-metallicity. These findings can lead to new ways of controlling the spintronic properties in hybrid-domain monolayers, which may be exploited in devices based on 2-D materials.

Long wave polar modes in semiconductor heterostructures

CERN Document Server

Trallero-Giner, C; García-Moliner, F; Garc A-Moliner, F; Perez-Alvarez, R; Garcia-Moliner, F

1998-01-01

Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor heterostructures from a phenomenological approach and aims to simplify the model of lattice dynamics calculations. The book provides useful tools for performing calculations relevant to anyone who might be interested in practical applications. The main focus of Long Wave Polar Modes in Semiconductor Heterostructures is planar heterostructures (quantum wells or barriers, superlattices, double barrier structures etc) but there is also discussion on the growing field of quantum wires and dots. Also to allow anyone reading the book to apply the techniques discussed for planar heterostructures, the scope has been widened to include cylindrical and spherical geometries. The book is intended as an introductory text which guides the reader through basic questions and expands to cover state-of-the-art professional topics. The book is relevant to experimentalists wanting an instructive presentatio...

Positron probing of electron momentum density in GaAs-AlAs superlattices and related materials

International Nuclear Information System (INIS)

Arutyunov, N.Y.; Sekkal, N.

2008-08-01

The band structure calculations based on the method proposed by Jaros et al. (Phys. Rev. B 31, 1205 (1985)) have been performed for the defect-free GaAs-AlAs superlattice and related AlAs and GaAs single crystals; the electron-positron momentum density distributions have been computed and analyzed. The results of calculations are in good agreement with the experimental data obtained ad hoc for GaAs and AlAs bulk materials by measuring the angular correlation of the annihilation radiation (ACAR). Small (but marked) features of the electron-positron momentum density of the valence band have been revealed both for constituent materials and GaAs-AlAs superlattice. The delocalization of positron in 'perfect' defect-'free' AlAs and GaAs single crystals to be observed experimentally is borne out by the results of pseudo-potential band calculations performed on the basis of method proposed by Sekkal et al. (Superlattices and Microstructures, 33, 63 (2003)). The prediction of the possibility of a certain confinement of positron in the interstitial area of GaAs- AlAs superlattice is confirmed by the agreement between the results of calculations and relevant experimental data obtained for GaAs and AlAs single crystals. No considerable effect of the enhancement of the annihilation rate (due to electron-positron interaction) upon the electron-positron momentum density distribution both in the superlattice and its constituent bulk materials has been found. The results of ACAR measurements and calculations performed suggest that a tangible improvement of the sensitivity of existing positron annihilation techniques is necessary for studying details of the electron-positron momentum density distributions in defect-'free' superlattices to be created on the basis of the diamond-like semiconductors possessing close values of the electron momentum densities. On the contrary, the positron-sensitive vacancy-type defects of various types in the superlattice may become a source of the

Reactive molecular beam epitaxial growth and in situ photoemission spectroscopy study of iridate superlattices

Directory of Open Access Journals (Sweden)

C. C. Fan

2017-08-01

Full Text Available High-quality (001-oriented perovskite [(SrIrO3m/(SrTiO3] superlattices (m=1/2, 1, 2, 3 and ∞ films have been grown on SrTiO3(001 epitaxially using reactive molecular beam epitaxy. Compared to previously reported superlattices synthesized by pulsed laser deposition, our superlattices exhibit superior crystalline, interface and surface structure, which have been confirmed by high-resolution X-ray diffraction, scanning transmission electron microscopy and atomic force microscopy, respectively. The transport measurements confirm a novel insulator-metal transition with the change of dimensionality in these superlattices, and our first systematic in situ photoemission spectroscopy study indicates that the increasing strength of effective correlations induced by reducing dimensionality would be the dominating origin of this transition.

Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

Energy Technology Data Exchange (ETDEWEB)

Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2016-03-01

Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

MBE growth and characterisation of light rare-earth superlattices

DEFF Research Database (Denmark)

Ward, R.C.C.; Wells, M.R.; Bryn-Jacobsen, C.

1996-01-01

The molecular beam epitaxy growth techniques which have already successfully produced a range of heavy rare-earth superlattices have now been extended to produce superlattices of two light rare-earth elements, Nd/Pr, as well as superlattices and alloy films of a heavy/light system, Ho/Pr. High......-resolution X-ray diffraction analysis shows the Nd/Pr superlattices to be of high structural quality, while the Ho/Pr superlattices are significantly less so. In the Ho/Pr superlattices, Pr is found to retain its bulk dhcp crystal structure even in thin layers (down to 6 atomic planes thick) sandwiched between...... thick layers of hcp Ho. In addition, neutron diffraction studies of the He/Pr superlattices have shown that the helical Ho magnetic order is not coherent through the dhcp Pr layers, in contrast to previous hcp/hcp superlattices Ho/Y, Ho/Lu and Ho/Er. The series of Ho:Pr alloy films has shown structural...

Ab initio study of thermoelectric properties of doped SnO_2 superlattices

International Nuclear Information System (INIS)

Borges, P.D.; Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J.; Scolfaro, L.

2015-01-01

Transparent conductive oxides, such as tin dioxide (SnO_2), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO_2, as well as of Sb and Zn planar (or delta)-doped layers in SnO_2 forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO_2 SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO_2-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO_2 superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

Electrochemical growth of highly oriented organic-inorganic superlattices using solid-supported multilamellar membranes as templates.

Science.gov (United States)

Xing, Li-Li; Li, Da-Peng; Hu, Shu-Xin; Jing, Huai-Yu; Fu, Honglan; Mai, Zhen-Hong; Li, Ming

2006-02-08

Controllable depositing of relatively thick inorganic sublayers into organic templates to fabricate organic-inorganic superlattices is of great importance. We report a novel approach to fabricating phospholipid/Ni(OH)(2) superlattices by electrochemical deposition of the inorganic component into solid-supported multilamellar templates. The well-ordered and highly oriented multilamellar templates are produced by spreading small drops of lipid solution on silicon surfaces and letting the solvent evaporate slowly. The templates which are used as working electrodes preserve the lamellar structure in the electrolyte solution. The resulting superlattices are highly oriented. The thickness of the nickel hydroxide is controlled by the concentration of nickel ions in the electrolyte bath. The electron density profiles derived from the X-ray diffraction data reveal that the thickness of the nickel hydroxide sublayers increases from 15 to 27 A as the concentration of nickel nitrate increases from 0.005 mol/L to 0.08 mol/L. We expect that the new method can be extended to depositing a variety of inorganic components including metals, oxides, and semiconductors.

Structural study of multilayered vanadium/nickel superlattices

International Nuclear Information System (INIS)

Homma, H.; Lepetre, Y.; Murduck, J.M.; Schuller, I.K.; Majkrzak, C.F.

1985-07-01

We have studied the microstructure of V/Ni metallic superlattice, using x-ray and neutron diffraction. We find a sharp and broad rocking curves around the first-order Bragg peak, and attribute them to a columnar structure which gives rise to two modulation structures; one the ordinary layered structure within the columns and the other the averaged modulation structure which produces the sharp rocking peak

Perovskite Superlattices as Tunable Microwave Devices

Science.gov (United States)

Christen, H. M.; Harshavardhan, K. S.

2003-01-01

Experiments have shown that superlattices that comprise alternating epitaxial layers of dissimilar paraelectric perovskites can exhibit large changes in permittivity with the application of electric fields. The superlattices are potentially useful as electrically tunable dielectric components of such microwave devices as filters and phase shifters. The present superlattice approach differs fundamentally from the prior use of homogeneous, isotropic mixtures of base materials and dopants. A superlattice can comprise layers of two or more perovskites in any suitable sequence (e.g., ABAB..., ABCDABCD..., ABACABACA...). Even though a single layer of one of the perovskites by itself is not tunable, the compositions and sequence of the layers can be chosen so that (1) the superlattice exhibits low microwave loss and (2) the interfacial interaction between at least two of the perovskites in the superlattice renders either the entire superlattice or else at least one of the perovskites tunable.

Curvature effects on the electronic and transport properties of semiconductor films

Science.gov (United States)

Batista, F. F.; Chaves, Andrey; da Costa, D. R.; Farias, G. A.

2018-05-01

Within the effective mass approximation, we study the curvature effects on the electronic and transport properties of semiconductor films. We investigate how the geometry-induced potential resulting exclusively from periodic ripples in the film induces electronic confinement and a superlattice band structure. For fixed curvature parameters, such a confinement can be easily tuned by an external electric field, hence features of the superlattice band structure such as its energy gaps and band curvature can be controlled by an external parameter. We also show that, for some values of curvature and electric field, it is possible to obtain massless Dirac bands for a smooth curved structure. Moreover, we use a wave packet propagation method to demonstrate that the ripples are responsible for a significant inter-sub-band transition, specially for moderate values of the ripple height.

New spintronic superlattices composed of half-metallic compounds with zinc-blende structure

International Nuclear Information System (INIS)

Fong, C Y; Qian, M C

2004-01-01

The successful growth of zinc-blende half-metallic compounds, namely CrAs and CrSb, in thin film forms offers a new direction to search for novel spintronic materials. By using a well documented first-principles algorithm, the VASP code, we predict the electronic and magnetic properties of superlattices made of these exciting half-metallic materials. Not only are the superlattices constructed with two of the half-metallic compounds (CrAs/MnAs) but also they are modelled to combine with both a III-V (GaAs-MnAs/CrAs/GaAs) and a IV-IV (MnC/SiC) semiconductor. We investigate variable thicknesses for the combinations. For every case, we find the equilibrium lattice constant as well as the lattice constant at which the superlattice exhibits the half-metallic properties. For CrAs/MnAs, the half-metallic properties are presented and the magnetic moments are shown to be the sum of the moments for MnAs and CrAs. The half-metallic properties of GaAs-MnAs/CrAs/GaAs are found to be crucially dependent on the completion of the d-p hybridization. The magnetic properties of MnC/SiC are discussed with respect to the properties of MnC

Wave mechanics applied to semiconductor heterostructures

International Nuclear Information System (INIS)

Bastard, G.

1990-01-01

This book examines the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-VI compounds. The book explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, the book discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light

Effect of high frequency field on the transport properties of superlattice

International Nuclear Information System (INIS)

Mensah, S.Y.

1992-10-01

Theoretical study of the transport properties of semiconductor superlattice (SL) in the presence of external electric field E(t) has been investigated with the help of Boltzmann's equation. The model adopted agrees fairly well with experimental work as well as Monte Carlo simulation. Among the phenomena observed are the induced self transparency, absolute negative conductivity and the negative differential conductivity. In the case of negative differential conductivity (NDC) it is observed that it does also occur under the a.c. and d.c electric field but appears only when ωτ 0 is equal to the amplitude of the a.c. field E 1 and the peak decreases with an increase in E 1 . (author). 20 refs, 1 fig

Magnetic structure of holmium-yttrium superlattices

DEFF Research Database (Denmark)

Jehan, D.A.; McMorrow, D.F.; Cowley, R.A.

1993-01-01

We present the results of a study of the chemical and magnetic structures of a series of holmium-yttrium superlattices and a 5000 angstrom film of holmium, all grown by molecular-beam epitaxy. By combining the results of high-resolution x-ray diffraction with detailed modeling, we show...... that the superlattices have high crystallographic integrity: the structural coherence length parallel to the growth direction is typically almost-equal-to 2000 angstrom, while the interfaces between the two elements are well defined and extend over approximately four lattice planes. The magnetic structures were...... determined using neutron-scattering techniques. The moments on the Ho3+ ions in the superlattices form a basal-plane helix. From an analysis of the superlattice structure factors of the primary magnetic satellites, we are able to determine separately the contributions made by the holmium and yttrium...

Thermal Conductivity of Graphene-hBN Superlattice Ribbons.

Science.gov (United States)

Felix, Isaac M; Pereira, Luiz Felipe C

2018-02-09

Superlattices are ideal model systems for the realization and understanding of coherent (wave-like) and incoherent (particle-like) phonon thermal transport. Single layer heterostructures of graphene and hexagonal boron nitride have been produced recently with sharp edges and controlled domain sizes. In this study we employ nonequilibrium molecular dynamics simulations to investigate the thermal conductivity of superlattice nanoribbons with equal-sized domains of graphene and hexagonal boron nitride. We analyze the dependence of the conductivity with the domain sizes, and with the total length of the ribbons. We determine that the thermal conductivity reaches a minimum value of 89 W m -1 K -1 for ribbons with a superlattice period of 3.43 nm. The effective phonon mean free path is also determined and shows a minimum value of 32 nm for the same superlattice period. Our results also reveal that a crossover from coherent to incoherent phonon transport is present at room temperature for BNC nanoribbons, as the superlattice period becomes comparable to the phonon coherence length. Analyzing phonon populations relative to the smallest superlattice period, we attribute the minimum thermal conductivity to a reduction in the population of flexural phonons when the superlattice period equals 3.43 nm. The ability to manipulate thermal conductivity using superlattice-based two-dimensional materials, such as graphene-hBN nanoribbons, opens up opportunities for application in future nanostructured thermoelectric devices.

Ab initio study of thermoelectric properties of doped SnO{sub 2} superlattices

Energy Technology Data Exchange (ETDEWEB)

Borges, P.D., E-mail: pdborges@gmail.com [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J. [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Scolfaro, L. [Department of Physics, Texas State University, 78666 San Marcos, TX (United States)

2015-11-15

Transparent conductive oxides, such as tin dioxide (SnO{sub 2}), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO{sub 2}, as well as of Sb and Zn planar (or delta)-doped layers in SnO{sub 2} forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO{sub 2} SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO{sub 2}-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO{sub 2} superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

Superlattices in thermoelectric applications

International Nuclear Information System (INIS)

Sofo, J.O.; Mahan, G.D.; Tennessee Univ., Knoxville, TN

1994-08-01

The electrical conductivity, thermopower and the electronic contribution to the thermal conductivity of a superlattice, are calculated with the electric field and the thermal gradient applied parallel to the interfaces. Tunneling between quantum wells is included. The broadening of the lowest subband when the period of the superlattice is decreased produces a reduction of the thermoelectric figure of merit. However, we found that a moderate increase of the figure of merit may be expected for intermediate values of the period, due to the enhancement of the density of states produced by the superlattice structure

Magnetic Rare-Earth Superlattices

DEFF Research Database (Denmark)

Majkrzak, C.F.; Gibbs, D.; Böni, P.

1988-01-01

The magnetic structures of several single‐crystal, magnetic rare‐earth superlattice systems grown by molecular‐beam epitaxy are reviewed. In particular, the results of recent neutron diffraction investigations of long‐range magnetic order in Gd‐Y, Dy‐Y, Gd‐Dy, and Ho‐Y periodic superlattices...... are presented. In the Gd‐Y system, an antiphase domain structure develops for certain Y layer spacings, whereas modified helical moment configurations are found to occur in the other systems, some of which are commensurate with the chemical superlattice wavelength. References are made to theoretical interaction...

Electrons and Phonons in Semiconductor Multilayers

Science.gov (United States)

Ridley, B. K.

1996-11-01

This book provides a detailed description of the quantum confinement of electrons and phonons in semiconductor wells, superlattices and quantum wires, and shows how this affects their mutual interactions. It discusses the transition from microscopic to continuum models, emphasizing the use of quasi-continuum theory to describe the confinement of optical phonons and electrons. The hybridization of optical phonons and their interactions with electrons are treated, as are other electron scattering mechanisms. The book concludes with an account of the electron distribution function in three-, two- and one-dimensional systems, in the presence of electrical or optical excitation. This text will be of great use to graduate students and researchers investigating low-dimensional semiconductor structures, as well as to those developing new devices based on these systems.

Ultrafast carrier dynamics in a GaN/Al 0.18Ga0.82N superlattice

Science.gov (United States)

Mahler, Felix; Tomm, Jens W.; Reimann, Klaus; Woerner, Michael; Elsaesser, Thomas; Flytzanis, Christos; Hoffmann, Veit; Weyers, Markus

2018-04-01

Relaxation processes of photoexcited carriers in a GaN /Al0.18Ga0.82N superlattice are studied in femtosecond spectrally resolved reflectivity measurements at ambient temperature. The transient reflectivity reveals electron trapping into defect states close to the conduction-band minimum with a 150-200 fs time constant, followed by few-picosecond carrier cooling. A second slower trapping process into a different manifold of defect states is observed on a time scale of approximately 10 ps. Our results establish the prominent role of structural defects and disorder for ultrafast carrier dynamics in nitride semiconductor structures.

Electric-field domain boundary instability in weakly coupled semiconductor superlattices

Energy Technology Data Exchange (ETDEWEB)

Rasulova, G. K., E-mail: rasulova@sci.lebedev.ru [P.N. Lebedev Physical Institute of Russian Academy of Sciences, 119991 Moscow (Russian Federation); Pentin, I. V. [Moscow State Pedagogical University, 119991 Moscow (Russian Federation); Brunkov, P. N. [A. F. Ioffe Physical and Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); National Research University of Information Technologies, Mechanics and Optics, 197101 St. Petersburg (Russian Federation); Egorov, A. Yu. [National Research University of Information Technologies, Mechanics and Optics, 197101 St. Petersburg (Russian Federation)

2016-05-28

Damped oscillations of the current were observed in the transient current pulse characteristics of a 30-period weakly coupled GaAs/AlGaAs superlattice (SL). The switching time of the current is exponentially decreased as the voltage is verged towards the current discontinuity region indicating that the space charge necessary for the domain boundary formation is gradually accumulated in a certain SL period in a timescale of several hundreds ns. The spectral features in the electroluminescence spectra of two connected in parallel SL mesas correspond to the energy of the intersubband transitions and the resonance detuning of subbands caused by charge trapping in the quantum wells (QWs) residing in a region of the expanded domain boundary. The obtained results support our understanding of the origin of self-oscillations as a cyclic dynamics of the subband structure in the QWs forming the expanded domain boundary.

Ground state energy of a polaron in a superlattice

International Nuclear Information System (INIS)

Mensah, S.Y.; Allotey, F.K.A.; Nkrumah, G.; Mensah, N.G.

2000-10-01

The ground state energy of a polaron in a superlattice was calculated using the double-time Green functions. The effective mass of the polaron along the planes perpendicular to the superlattice axis was also calculated. The dependence of the ground state energy and the effective mass along the planes perpendicular to the superlattice axis on the electron-phonon coupling constant α and on the superlattice parameters (i.e. the superlattice period d and the bandwidth Δ) were studied. It was observed that if an infinite square well potential is assumed, the ground state energy of the polaron decreases (i.e. becomes more negative) with increasing α and d, but increases with increasing Δ. For small values of α, the polaron ground state energy varies slowly with Δ, becoming approximately constant for large Δ. The effective mass along the planes perpendicular to the superlattice axis was found to be approximately equal to the mass of an electron for all typical values of α, d and Δ. (author)

Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors; Thermoelektrische Eigenschaften duenner Schichten und Uebergitterstrukturen von IV-VI- und V-VI-Verbundhalbleitern

Energy Technology Data Exchange (ETDEWEB)

Blumers, Mathias

2012-02-29

The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S{sup 2}.{sigma}/k, where S is the Seebeck-coefficient, {sigma} is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb{sub 1-x}Sr{sub x}Te and Bi{sub 2}(Se{sub x}Te{sub 1-x}){sub 3}, respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, {sigma} and {kappa} parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,{sigma},{kappa}) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

Physics with isotopically controlled semiconductors

International Nuclear Information System (INIS)

Haller, E.E.

1994-08-01

Control of the isotopic composition of semiconductors offers a wide range of new scientific opportunities. In this paper a number of recent results obtained with isotopically pure as well as deliberately mixed diamond and Ge bulk single crystals and Ge isotope superlattices will be reviewed. Isotopic composition affects several properties such as phonon energies, bandstructure and lattice constant in subtle but theoretically well understood ways. Large effects are observed for thermal conductivity, local vibrational modes of impurities and after neutron transmutation doping (NTD). Several experiments which could profit greatly from isotope control are proposed

Epitaxial rare-earth superlattices and films

International Nuclear Information System (INIS)

Salamon, M.B.; Beach, R.S.; Flynn, C.P.; Matheny, A.; Tsui, F.; Rhyne, J.J.

1992-01-01

This paper reports on epitaxial growth of rare-earth superlattices which is demonstrated to have opened important new areas of research on magnetic materials. The propagation magnetic order through non-magnetic elements, including its range and anisotropy, has been studied. The importance of magnetostriction in determining the phase diagram is demonstrated by the changes induced by epitaxial clamping. The cyrstallinity of epitaxial superlattices provides the opportunity to study interfacial magnetism by conventional x-ray and neutron scattering methods

Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode

International Nuclear Information System (INIS)

Jin, Xiuguang; Matsuba, Shunya; Honda, Yosuke; Miyajima, Tsukasa; Yamamoto, Masahiro; Utiyama, Takashi; Takeda, Yoshikazu

2013-01-01

GaAs/GaAsP strained superlattices are excellent candidates for use as spin-polarized electron sources. In the present study, picosecond electron bunches were successfully generated from such a superlattice photocathode. However, electron transport in the superlattice was much slower than in bulk GaAs. Transmission electron microscopy observations revealed that a small amount of variations in the uniformity of the layers was present in the superlattice. These variations lead to fluctuations in the superlattice mini-band structure and can affect electron transport. Thus, it is expected that if the periodicity of the superlattice can be improved, much faster electron bunches can be produced. - Highlights: • GaAs/GaAsP strained superlattices are excellent candidates for spin-polarized electron beam. • Pulse spin-polarized electron beam is required for investigating the magnetic domain change. • Picosecond electron bunches were achieved from GaAs/GaAsP superlattice photocathode. • TEM observation revealed a small disorder of superlattice layers. • Improvement of superlattice periodicity can achieve much faster electron bunches

Magnetic superlattices

International Nuclear Information System (INIS)

Kwo, J.; Hong, M.; McWhan, D.B.; Yafet, Y.; Fleming, R.M.; DiSalvo, F.J.; Waszczak, J.V.; Majkrzak, C.F.; Gibbs, D.; Goldmann, A.I.; Boni, P.; Bohr, J.; Grimm, H.; Bohr, J.; Chien, C.L.; Grimm, H.; Cable, J.W.

1988-01-01

Single crystal magnetic rare earth superlattices were synthesized by molecular beam epitaxy. The studies include four rare earth systems: Gd-Y, Dy-Y, Ho-Y, and Gd-Dy. The magnetic properties and the long-range spin order are reviewed in terms of the interfacial behavior, and the interlayer exchange coupling across Y medium

Study of the vertical transport in p-doped superlattices based on group III-V semiconductors

Directory of Open Access Journals (Sweden)

Sipahi Guilherme

2011-01-01

Full Text Available Abstract The electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.3Ga0.7N thin superlattices (SLs. The calculations are done within a self-consistent approach to the k → ⋅ p → theory by means of a full six-band Luttinger-Kohn Hamiltonian, together with the Poisson equation in a plane wave representation, including exchange correlation effects within the local density approximation. It was also assumed that transport in the SL occurs through extended minibands states for each carrier, and the conductivity is calculated at zero temperature and in low-field ohmic limits by the quasi-chemical Boltzmann kinetic equation. It was shown that the particular minibands structure of the p-doped SLs leads to a plateau-like behavior in the conductivity as a function of the donor concentration and/or the Fermi level energy. In addition, it is shown that the Coulomb and exchange-correlation effects play an important role in these systems, since they determine the bending potential.

Solvent-driven symmetry of self-assembled nanocrystal superlattices-A computational study

KAUST Repository

Kaushik, Ananth P.; Clancy, Paulette

2012-01-01

used solvents, toluene and hexane. System sizes in the 400,000-500,000-atom scale followed for nanoseconds are required for this computationally intensive study. The key questions addressed here concern the thermodynamic stability of the superlattice

Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

International Nuclear Information System (INIS)

Birner, Stefan

2011-01-01

The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano 3 software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano 3 software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model to recently

Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

Energy Technology Data Exchange (ETDEWEB)

Birner, Stefan

2011-11-15

The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model

Epitaxy, thin films and superlattices

International Nuclear Information System (INIS)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

Epitaxy, thin films and superlattices

Energy Technology Data Exchange (ETDEWEB)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

Magnetic modes in superlattices

International Nuclear Information System (INIS)

Oliveira, F.A.

1990-04-01

A first discussion of reciprocal propagation of magnetic modes in a superlattice is presented. In the absence of an applied external magnetic field a superllatice made of alternate layers of the type antiferromagnetic-non-magnetic materials presents effects similar to those of phonons in a dielectric superlattice. (A.C.A.S.) [pt

Exchange bias in Fe/Cr double superlattices

International Nuclear Information System (INIS)

Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C.; Bader, S. D.

1999-01-01

Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter-deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains

Exchange bias in Fe/Cr double superlattices

International Nuclear Information System (INIS)

Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C. S.; Bader, S. D.

2000-01-01

Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains. (c) 2000 American Vacuum Society

Electronic structure modeling of InAs/GaSb superlattices with hybrid density functional theory

Energy Technology Data Exchange (ETDEWEB)

Garwood, Tristan [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Modine, Normand A. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Krishna, S. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials

2016-12-18

The application of first-principles calculations holds promise for greatly improving our understanding of semiconductor superlattices. By developing a procedure to accurately predict band gaps using hybrid density functional theory, it lays the groundwork for future studies investigating more nuanced properties of these structures. Our approach allows a priori prediction of the properties of SLS structures using only the band gaps of the constituent materials. Furthermore, it should enable direct investigation of the effects of interface structure, e.g., intermixing or ordering at the interface, on SLS properties. In this paper, we present band gap data for various InAs/GaSb type-II superlattice structures calculated using the generalized Kohn-Sham formulation of density functional theory. A PBE0-type hybrid functional was used, and the portion of the exact exchange was tuned to fit the band gaps of the binary compounds InAs and GaSb with the best agreement to bulk experimental values obtained with 18% of the exact exchange. The heterostructures considered in this study are 6 monolayer (ML) InAs/6 ML GaSb, 8 ML InAs/8 ML GaSb and 10 ML InAs/10 ML GaSb with deviations from the experimental band gaps ranging from 3% to 11%.

X-ray diffraction study of epitaxial heterostructures of II-VI CdTe and ZnTe semiconductors; Etude par diffraction de rayons X d`heterostructures epitaxiees a base des semi-conducteurs II-VI CdTe et ZnTe

Energy Technology Data Exchange (ETDEWEB)

Bouchet-Boudet, N.

1996-10-07

This work deals with the structural study of II-VI semiconductor (CdTe and ZnTe) heterostructures by X-ray diffraction and reflectivity. These heterostructures have a high lattice parameter misfit and are grown by Molecular Beam Epitaxy. Two main subjects are developed: the characterization of ZnTe wires, grown by step propagation on a CdTe (001) vicinal surface, and the study of the vertical correlations in Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattices and superlattices made of ZnTe fractional layers spaced by CdTe. The growth of organised system is up to date; its aim is to realize quantum boxes (or wires) superlattices which are laterally and vertically ordered. The deformation along the growth axis induced by a ZnTe fractional layer inserted in a CdTe matrix is modelled, in the kinematical approximation, to reproduce the reflectivity measured around the substrate (004) Bragg peak. The lateral periodicity of the wires, deposited on a vicinal surface is a new and difficult subject. Some results are obtained on a vertical superlattice grown on a 1 deg. mis-cut surface. The in-plane and out-of-plane correlation lengths of a Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattice are deduced from the diffused scattered intensity measured at grazing incidence. The calculations are made within the `distorted Wave Born Approximation`. The vertical correlation in ZnTe boxes (or wines) superlattices can be measured around Bragg peaks. It is twice bigger in a superlattice grown on a 2 deg. mis-cut substrate than a nominal one. (author). 74 refs.

Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors

Science.gov (United States)

Schöll, Eckehard

2005-08-01

Nonlinear transport phenomena are an increasingly important aspect of modern semiconductor research. This volume deals with complex nonlinear dynamics, pattern formation, and chaotic behavior in such systems. It bridges the gap between two well-established fields: the theory of dynamic systems and nonlinear charge transport in semiconductors. This unified approach helps reveal important electronic transport instabilities. The initial chapters lay a general framework for the theoretical description of nonlinear self-organized spatio-temporal patterns, such as current filaments, field domains, fronts, and analysis of their stability. Later chapters consider important model systems in detail: impact ionization induced impurity breakdown, Hall instabilities, superlattices, and low-dimensional structures. State-of-the-art results include chaos control, spatio-temporal chaos, multistability, pattern selection, activator-inhibitor kinetics, and global coupling, linking fundamental issues to electronic device applications. This book will be of great value to semiconductor physicists and nonlinear scientists alike.

Characterization of the Nb-B superlattice system

Energy Technology Data Exchange (ETDEWEB)

Franco, D.G.; Sarmiento-Chavez, A.; Schenone, N.; Llacsahuanga Allcca, A.E.; Gómez Berisso, M.; Fasano, Y.; Guimpel, J., E-mail: jguimpel@cab.cnea.gov.ar

2016-12-15

Highlights: • In this manuscript we study the crystalline and superconducting properties of this system, as a possible material to be used in solid state neutron detector sensors. • The results show that this superlattice system can be grown even for very thin layers, in spite of the Nb-B binary system showing many possible compounds, which could enhance interdifussion at the interfaces. • Also, the superconducting properties are not degraded, and they are even enhanced with respect to those of single Nb films of the same thickness. • In conclusion, we find that this system is a good potential candidate for the design and construction of solid state neutron Transition Edge Sensors. - Abstract: We study the growth, stacking and superconducting properties of Nb and B thin films and superlattices. The interest in these resides in their possible use in transition edge neutron sensors. The samples were grown by magnetron sputtering over Si (1  0  0) substrates. The X-ray diffraction patterns for all Nb containing samples show a Nb (1  1  0) preferential orientation. From the low-angle X-ray reflectivity we obtain information on the superlattice structure. The superconducting transition temperatures of the superlattices, obtained from the temperature dependence of the magnetization, are higher than those of single Nb films of similar thickness. The temperature dependence of the perpendicular and parallel upper critical fields indicate that the superlattices behave as an array of decoupled superconducting Nb layers.

Characterization of the Nb-B superlattice system

International Nuclear Information System (INIS)

Franco, D.G.; Sarmiento-Chavez, A.; Schenone, N.; Llacsahuanga Allcca, A.E.; Gómez Berisso, M.; Fasano, Y.; Guimpel, J.

2016-01-01

Highlights: • In this manuscript we study the crystalline and superconducting properties of this system, as a possible material to be used in solid state neutron detector sensors. • The results show that this superlattice system can be grown even for very thin layers, in spite of the Nb-B binary system showing many possible compounds, which could enhance interdifussion at the interfaces. • Also, the superconducting properties are not degraded, and they are even enhanced with respect to those of single Nb films of the same thickness. • In conclusion, we find that this system is a good potential candidate for the design and construction of solid state neutron Transition Edge Sensors. - Abstract: We study the growth, stacking and superconducting properties of Nb and B thin films and superlattices. The interest in these resides in their possible use in transition edge neutron sensors. The samples were grown by magnetron sputtering over Si (1  0  0) substrates. The X-ray diffraction patterns for all Nb containing samples show a Nb (1  1  0) preferential orientation. From the low-angle X-ray reflectivity we obtain information on the superlattice structure. The superconducting transition temperatures of the superlattices, obtained from the temperature dependence of the magnetization, are higher than those of single Nb films of similar thickness. The temperature dependence of the perpendicular and parallel upper critical fields indicate that the superlattices behave as an array of decoupled superconducting Nb layers.

A CPA study of the phonon structure of disordered superlattices

International Nuclear Information System (INIS)

Shijie Xiong; Gendi Pang; Chienhua Tsai.

1985-08-01

The phonon structure of superlattices or modulated alloys with substitutional disorder is studied in the Coherent Phase Approximation (CPA). We consider first the case with diagonal disorder only, by adopting a virtual crystal approximation for the force constants. Then we treat the more complicated case with inclusion of off-diagonal disorder. Numerical examples are also studied in both cases. (author)

Rare earth superlattices

International Nuclear Information System (INIS)

McMorrow, D.F.

1997-01-01

A review is given of recent experiments on the magnetism of rare earth superlattices. Early experiments in this field were concerned mainly with systems formed by combining a magnetic and a non-magnetic element in a superlattice structure. From results gathered on a variety of systems it has been established that the propagation of magnetic order through the non-magnetic spacer can be understood mostly on the basis of an RKKY-like model, where the strength and range of the coupling depends on the details of the conduction electron susceptibility of the spacer. Recent experiments on more complex systems indicate that this model does not provide a complete description. Examples include superlattices where the constituents can either be both magnetic, adopt different crystal structures (Fermi surfaces), or where one of the constituents has a non-magnetic singlet ground state. The results from such systems are presented and discussed in the context of the currently accepted model. (au)

Theory of quantum diffusion in biased semiconductors

CERN Document Server

Bryksin, V V

2003-01-01

A general theory is developed to describe diffusion phenomena in biased semiconductors and semiconductor superlattices. It is shown that the Einstein relation is not applicable for all field strengths so that the calculation of the field-mediated diffusion coefficient represents a separate task. Two quite different diffusion contributions are identified. The first one disappears when the dipole operator commutes with the Hamiltonian. It plays an essential role in the theory of small polarons. The second contribution is obtained from a quantity that is the solution of a kinetic equation but that cannot be identified with the carrier distribution function. This is in contrast to the drift velocity, which is closely related to the distribution function. A general expression is derived for the quantum diffusion regime, which allows a clear physical interpretation within the hopping picture.

Ordering-induced changes in the optical spectra of semiconductor alloys

International Nuclear Information System (INIS)

Bernard, J.E.; Wei, S.; Wood, D.M.; Zunger, A.

1988-01-01

It is shown how the recently predicted and subsequently observed spontaneous long-range ordering of pseudobinary A/sub 0.5/B/sub 0.5/C isovalent semiconductor alloys into the (AC) 1 (BC) 1 superlattice structure (a CuAuI-type crystal) gives rise to characteristic changes in the optical and photoemission spectra. We predict new direct transitions and substantial splittings of transitions absent in the disordered alloy

Quantitative x-ray structure determination of superlattices and interfaces

International Nuclear Information System (INIS)

Schuller, I.K.; Fullerton, E.E.

1990-01-01

This paper presents a general procedure for quantitative structural refinement of superlattice structures. To analyze a wide range of superlattices, the authors have derived a general kinematical diffraction formula that includes random, continuous and discrete fluctuations from the average structure. By implementing a non-linear fitting algorithm to fit the entire x-ray diffraction profile, refined parameters that describe the average superlattice structure, and deviations from this average are obtained. The structural refinement procedure is applied to a crystalline/crystalline Mo/Ni superlattices and crystalline/amorphous Pb/Ge superlattices. Roughness introduced artificially during growth in Mo/Ni superlattices is shown to be accurately reproduced by the refinement

Solvent-driven symmetry of self-assembled nanocrystal superlattices-A computational study

KAUST Repository

Kaushik, Ananth P.

2012-10-29

The preference of experimentally realistic sized 4-nm facetted nanocrystals (NCs), emulating Pb chalcogenide quantum dots, to spontaneously choose a crystal habit for NC superlattices (Face Centered Cubic (FCC) vs. Body Centered Cubic (BCC)) is investigated using molecular simulation approaches. Molecular dynamics simulations, using united atom force fields, are conducted to simulate systems comprised of cube-octahedral-shaped NCs covered by alkyl ligands, in the absence and presence of experimentally used solvents, toluene and hexane. System sizes in the 400,000-500,000-atom scale followed for nanoseconds are required for this computationally intensive study. The key questions addressed here concern the thermodynamic stability of the superlattice and its preference of symmetry, as we vary the ligand length of the chains, from 9 to 24 CH2 groups, and the choice of solvent. We find that hexane and toluene are "good" solvents for the NCs, which penetrate the ligand corona all the way to the NC surfaces. We determine the free energy difference between FCC and BCC NC superlattice symmetries to determine the system\\'s preference for either geometry, as the ratio of the length of the ligand to the diameter of the NC is varied. We explain these preferences in terms of different mechanisms in play, whose relative strength determines the overall choice of geometry. © 2012 Wiley Periodicals, Inc.

Antiferromagnetic spinor condensates in a bichromatic superlattice

Science.gov (United States)

Tang, Tao; Zhao, Lichao; Chen, Zihe; Liu, Yingmei

2017-04-01

A spinor Bose-Einstein condensate in an optical supelattice has been considered as a good quantum simulator for understanding mesoscopic magnetism. We report an experimental study on an antiferromagnetic spinor condensate in a bichromatic superlattice constructed by a cubic red-detuned optical lattice and a one-dimensional blue-detuned optical lattice. Our data demonstrate a few advantages of this bichromatic superlattice over a monochromatic lattice. One distinct advantage is that the bichromatic superlattice enables realizing the first-order superfluid to Mott-insulator phase transitions within a much wider range of magnetic fields. In addition, we discuss an apparent discrepancy between our data and the mean-field theory. We thank the National Science Foundation and the Oklahoma Center for the Advancement of Science and Technology for financial support.

Binding of biexcitons in GaAs/AlxGa1-xAs superlattices

DEFF Research Database (Denmark)

Mizeikis, Vygantas; Birkedal, Dan; Langbein, Wolfgang Werner

1997-01-01

Properties of the heavy-hole excitons and biexcitons in GaAs/Al0.3Ga0.7As superlattices are studied using linear and nonlinear optical techniques. In superlattices with miniband halfwidths less than the exciton binding energy, the biexciton binding energy is found to be the same as in the noninte......Properties of the heavy-hole excitons and biexcitons in GaAs/Al0.3Ga0.7As superlattices are studied using linear and nonlinear optical techniques. In superlattices with miniband halfwidths less than the exciton binding energy, the biexciton binding energy is found to be the same...

Scaling properties of optical reflectance from quasi-periodic superlattices

International Nuclear Information System (INIS)

Wu Xiang; Yao Hesheng; Feng Weiguo

1991-08-01

The scaling properties of the optical reflectance from two types of quasi-periodic metal-insulator superlattices, one with the structure of Cantor bars and the other with the structure of Cantorian-Fibonaccian train, have been studied for the region of s-polarized soft x-rays and extreme ultraviolet. By using the hydrodynamic model of electron dynamics and transfer-matrix method, and be taking into account retardation effects, we have presented the formalism of the reflectivity for the superlattices. From our numerical results, we found that the reflection spectra of the quasi-superlattices have a rich structure of self-similarity. The interesting scaling indices, which are related to the fractal dimensions, of the spectra are also discussed for the two kinds of the quasi-superlattices. (author). 10 refs, 7 figs

Anisotropic behavior of quantum transport in graphene superlattices

DEFF Research Database (Denmark)

Pedersen, Jesper Goor; Cummings, Aron W.; Roche, Stephan

2014-01-01

We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength of multi......We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength...

Finite difference numerical method for the superlattice Boltzmann transport equation and case comparison of CPU(C) and GPU(CUDA) implementations

Energy Technology Data Exchange (ETDEWEB)

Priimak, Dmitri

2014-12-01

We present a finite difference numerical algorithm for solving two dimensional spatially homogeneous Boltzmann transport equation which describes electron transport in a semiconductor superlattice subject to crossed time dependent electric and constant magnetic fields. The algorithm is implemented both in C language targeted to CPU and in CUDA C language targeted to commodity NVidia GPU. We compare performances and merits of one implementation versus another and discuss various software optimisation techniques.

Finite difference numerical method for the superlattice Boltzmann transport equation and case comparison of CPU(C) and GPU(CUDA) implementations

International Nuclear Information System (INIS)

Priimak, Dmitri

2014-01-01

We present a finite difference numerical algorithm for solving two dimensional spatially homogeneous Boltzmann transport equation which describes electron transport in a semiconductor superlattice subject to crossed time dependent electric and constant magnetic fields. The algorithm is implemented both in C language targeted to CPU and in CUDA C language targeted to commodity NVidia GPU. We compare performances and merits of one implementation versus another and discuss various software optimisation techniques

Plasmon Modes of Vertically Aligned Superlattices

DEFF Research Database (Denmark)

Filonenko, Konstantin; Duggen, Lars; Willatzen, Morten

2017-01-01

By using the Finite Element Method we visualize the modes of vertically aligned superlattice composed of gold and dielectric nanocylinders and investigate the emitter-plasmon interaction in approximation of weak coupling. We find that truncated vertically aligned superlattice can function...

Chaotic dynamics dependence on doping density in weakly coupled GaAs/AlAs superlattices

International Nuclear Information System (INIS)

Yang Gui; Zhang Fengying; Li Yuanhong; Li Yuqi

2012-01-01

A discrete sequential tunneling model is used for studying the influence of the doping density on the dynamical behaviors in weakly coupled GaAs/AlAs superlattices. Driven by the DC bias, the system exhibits self-sustained current oscillations induced by the period motion of the unstable electric field domain, and an electrical hysteresis in the loop of current density voltage curve is deduced. It is found that the hysteresis range strongly depends on the doping density, and the width of the hysteresis loop increases with increasing the doping density. By adding an external driving ac voltage, more complicated nonlinear behaviors are observed including quasiperiodicity, period-3, and the route of an inverse period-doubling to chaos when the driving frequency changes. (semiconductor physics)

Quasi free-standing silicene in a superlattice with hexagonal boron nitride

KAUST Repository

Kaloni, T. P.

2013-11-12

We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved. Due to the wide band gap of hexagonal boron nitride, the superlattice realizes the characteristic physical phenomena of free-standing silicene. In particular, we address by model calculations the combined effect of the intrinsic spin-orbit coupling and an external electric field, which induces a transition from a semimetal to a topological insulator and further to a band insulator.

Novel electronic structures of superlattice composed of graphene and silicene

International Nuclear Information System (INIS)

Yu, S.; Li, X.D.; Wu, S.Q.; Wen, Y.H.; Zhou, S.; Zhu, Z.Z.

2014-01-01

Highlights: • Graphene/silicene superlattices exhibit metallic electronic properties. • Dirac point of graphene is folded to the Γ-point in the superlattice system. • Significant changes in the transport properties of the graphene layers are expected. • Small amount of charge transfer from the graphene to the silicene layers is found. - Abstract: Superlattice is a major force in providing man-made materials with unique properties. Here we report a study of the structural and electronic properties of a superlattice made with alternate stacking of graphene and hexagonal silicene. Three possible stacking models, i.e., the top-, bridge- and hollow-stacking, are considered. The top-stacking is found to be the most stable pattern. Although both the free-standing graphene and silicene are semi-metals, our results suggest that the graphene and silicene layers in the superlattice both exhibit metallic electronic properties due to a small amount of charge transfer from the graphene to the silicene layers. More importantly, the Dirac point of graphene is folded to the Γ-point of the superlattice, instead of the K-point in the isolated graphene. Such a change in the Dirac point of graphene could lead to significant change in the transportation property of the graphene layer. Moreover, the band structure and the charge transfer indicate that the interaction between the stacking sheets in the graphene/silicene superlattice is more than just the van der Waals interaction

Epitaxial superlattices with titanium nitride as a plasmonic component for optical hyperbolic metamaterials

DEFF Research Database (Denmark)

Naik, Gururaj V.; Saha, Bivas; Liu, Jing

2014-01-01

, we address these issues by realizing an epitaxial superlattice as an HMM. The superlattice consists of ultrasmooth layers as thin as 5 nm and exhibits sharp interfaces which are essential for high-quality HMM devices. Our study reveals that such a TiN-based superlattice HMM provides a higher PDOS...

Quasi free-standing silicene in a superlattice with hexagonal boron nitride

KAUST Repository

Kaloni, T. P.; Tahir, M.; Schwingenschlö gl, Udo

2013-01-01

We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized

Topotactic interconversion of nanoparticle superlattices.

Science.gov (United States)

Macfarlane, Robert J; Jones, Matthew R; Lee, Byeongdu; Auyeung, Evelyn; Mirkin, Chad A

2013-09-13

The directed assembly of nanoparticle building blocks is a promising method for generating sophisticated three-dimensional materials by design. In this work, we have used DNA linkers to synthesize nanoparticle superlattices that have greater complexity than simple binary systems using the process of topotactic intercalation-the insertion of a third nanoparticle component at predetermined sites within a preformed binary lattice. Five distinct crystals were synthesized with this methodology, three of which have no equivalent in atomic or molecular crystals, demonstrating a general approach for assembling highly ordered ternary nanoparticle superlattices whose structures can be predicted before their synthesis. Additionally, the intercalation process was demonstrated to be completely reversible; the inserted nanoparticles could be expelled into solution by raising the temperature, and the ternary superlattice could be recovered by cooling.

Deep levels in silicon–oxygen superlattices

International Nuclear Information System (INIS)

Simoen, E; Jayachandran, S; Delabie, A; Caymax, M; Heyns, M

2016-01-01

This work reports on the deep levels observed in Pt/Al 2 O 3 /p-type Si metal-oxide-semiconductor capacitors containing a silicon–oxygen superlattice (SL) by deep-level transient spectroscopy. It is shown that the presence of the SL gives rise to a broad band of hole traps occurring around the silicon mid gap, which is absent in reference samples with a silicon epitaxial layer. In addition, the density of states of the deep layers roughly scales with the number of SL periods for the as-deposited samples. Annealing in a forming gas atmosphere reduces the maximum concentration significantly, while the peak energy position shifts from close-to mid-gap towards the valence band edge. Based on the flat-band voltage shift of the Capacitance–Voltage characteristics it is inferred that positive charge is introduced by the oxygen atomic layers in the SL, indicating the donor nature of the underlying hole traps. In some cases, a minor peak associated with P b dangling bond centers at the Si/SiO 2 interface has been observed as well. (paper)

Control of the interparticle spacing in gold nanoparticle superlattices

Energy Technology Data Exchange (ETDEWEB)

MARTIN,JAMES E.; WILCOXON,JESS P.; ODINEK,JUDY G.; PROVENCIO,PAULA P.

2000-04-06

The authors have investigated the formation of 2-D and 3-D superlattices of Au nanoclusters synthesized in nonionic inverse micelles, and capped with alkyl thiol ligands, with alkane chains ranging from C{sub 6} to C1{sub 18}. The thiols are found to play a significant role in the ripening of these nanoclusters, and in the formation of superlattices. Image processing techniques were developed to reliably extract from transmission electron micrographs (TEMs) the particle size distribution, and information about the superlattice domains and their boundaries. The latter permits one to compute the intradomain vector pair correlation function, from which one can accurately determine the lattice spacing and the coherent domain size. From these data the gap between the particles in the coherent domains can be determined as a function of the thiol chain length. It is found that as the thiol chain length increases, the nanoclusters become more polydisperse and larger, and the gaps between particles within superlattice domains increases. Annealing studies at elevated temperatures confirm nanocluster ripening. Finally, the effect of the particle gaps on physical properties is illustrated by computing the effective dielectric constant, and it is shown that the gap size now accessible in superlattices is rather large for dielectric applications.

Investigation of switching region in superlattice phase change memories

Science.gov (United States)

Ohyanagi, T.; Takaura, N.

2016-10-01

We investigated superlattice phase change memories (PCMs) to clarify which regions were responsible for switching. We observed atomic structures in a superlattice PCM film with a stack of GeTe / Sb2Te3 layers using atomically resolved EDX maps, and we found an intermixed region with three atom species of the Ge, Sb and Te around the top GeTe layer under the top electrode. We also found that a device with a GeTe layer on an Sb2Te3 layer without superlattice structure had the same switching characteristics as a device with a superlattice PCM, that had the same top GeTe layer. We developed and fabricated a modified superlattice PCM that attained ultra low Reset / Set currents under 60 μ A .

Structural and magnetic properties of holmium-scandium alloys and superlattices

DEFF Research Database (Denmark)

Bryn-Jacobsen, C.; Cowley, R.A.; McMorrow, D.F.

1997-01-01

The properties of Ho-Sc alloys and superlattices grown by molecular-beam epitaxy have been investigated using x-ray and neutron-diffraction techniques. Structural studies reveal that the alloy samples have different a lattice parameters for the Sc-seed layer and the Ho:Sc alloy grown on top...... of the seed layer; while the superlattices have different a lattice parameters for the Sc seed, and for both the Ho and Sc in the superlattice layers. The structural characteristics are related to the large lattice mismatches (of the order 7%) between the constituent elements. The magnetic moments...

The solitary electromagnetic waves in the graphene superlattice

International Nuclear Information System (INIS)

Kryuchkov, Sergey V.; Kukhar', Egor I.

2013-01-01

d’Alembert equation written for the electromagnetic waves propagating in the graphene superlattice is analyzed. The possibility of the propagation of the solitary electromagnetic waves in the graphene superlattice is discussed. The amplitude and the width of the electromagnetic pulse are calculated. The drag current induced by such wave across the superlattice axis is investigated. The numerical estimate of the charge dragged by the solitary wave is made.

Microwave absorption in YBCO/PrBCO superlattices

International Nuclear Information System (INIS)

Carlos, W.E.; Kaplan, R.; Lowndes, D.H.; Norton, D.P.

1992-01-01

In this paper, non-resonant microwave absorption is employed to probe YBCO/PrBCO superlattices and compare the response to that of a YBCO film. Near the transition temperatures, the response of the superlattice samples and the YBCO film have similar amplitudes and orientation dependencies. At lower temperatures, the response of the superlattices is much stronger than that of the YBCO film and, while both responses are hysteretic at low temperatures, the widths of the hysteresis have opposite orientation dependencies, which the authors attribute to the role of the PrBCO layers

Minority Carrier Lifetime Studies of Narrow Bandgap Antimonide Superlattices

Science.gov (United States)

Hoglund, Linda; Ting, David Z.; Khoshakhlagh, Arezou; Soibel, Alexander; Hill, Cory J.; Fisher, Anita; Keo, Sam; Gunapala, Sarath D.

2014-01-01

In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.

Designing Optical Properties in DNA-Programmed Nanoparticle Superlattices

Science.gov (United States)

Ross, Michael Brendan

A grand challenge of modern science has been the ability to predict and design the properties of new materials. This approach to the a priori design of materials presents a number of challenges including: predictable properties of the material building blocks, a programmable means for arranging such building blocks into well understood architectures, and robust models that can predict the properties of these new materials. In this dissertation, we present a series of studies that describe how optical properties in DNA-programmed nanoparticle superlattices can be predicted prior to their synthesis. The first chapter provides a history and introduction to the study of metal nanoparticle arrays. Chapter 2 surveys and compares several geometric models and electrodynamics simulations with the measured optical properties of DNA-nanoparticle superlattices. Chapter 3 describes silver nanoparticle superlattices (rather than gold) and identifies their promise as plasmonic metamaterials. In chapter 4, the concept of plasmonic metallurgy is introduced, whereby it is demonstrated that concepts from materials science and metallurgy can be applied to the optical properties of mixed metallic plasmonic materials, unveiling rich and tunable optical properties such as color and asymmetric reflectivity. Chapter 5 presents a comprehensive theoretical exploration of anisotropy (non-spherical) in nanoparticle superlattice architectures. The role of anisotropy is discussed both on the nanoscale, where several desirable metamaterial properties can be tuned from the ultraviolet to near-infrared, and on the mesoscale, where the size and shape of a superlattice is demonstrated to have a pronounced effect on the observed far-field optical properties. Chapter 6 builds upon those theoretical data presented in chapter 5, including the experimental realization of size and shape dependent properties in DNA-programmed superlattices. Specifically, nanoparticle spacing is explored as a parameter that

Epitaxial Growth, Surface, and Electronic Properties of Unconventional Semiconductors: RE-V/III-V Nanocomposites and Semiconducting Half Heusler Alloys

Science.gov (United States)

2014-09-01

10.1103/PhysRevLett.45.494. [2] D.C. Tsui, H.L. Stormer , and A.C. Gossard. Two-dimensional magnetotransport in the extreme quantum limit. Phys. Rev. Lett...5] R. Dingle, H. L. Stormer , A. C. Gossard, and W. Wiegmann. Electron mobil- ities in modulation-doped semiconductor heterojunction superlattices

Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2

International Nuclear Information System (INIS)

Greene, J.E.

1984-01-01

The understanding of the physics of ion-surface interactions has progressed sufficiently to allow sputter depositinn to be used as a crystal growth technique for depositing a wide variety of single crystal elemental, compound, alloy, and superlattice semiconductors. In many cases, films with essentially bulk values of carrier concentrations and mobilities have been obtained. The controlled use of low energy particle bombardment of the growing film during sputter deposition has been shown to affect all stages of crystal growth ranging from adatom mobilities and nucleation kinetics to elemental incorporation probabilities. Such effects provide inherent advantages for sputter deposition over other vapor phase techniques for the low temperature growth of compound and alloy semiconductors and are essential in allowing the growth of new and unique single crystal metastable semiconductors. Part 1 of this review includes sections on experimental techniques, the physics of ion-surface interactions, and ion bombardment effects on film nucleation and growth, while Part 2 presents a discussion of recent results in the growth of elemental, III-V, II-VI, IV-VI, metastable, and other compound semiconductors

ZnSe/ZnSeTe Superlattice Nanotips

Directory of Open Access Journals (Sweden)

Young SJ

2010-01-01

Full Text Available Abstract The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100 substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.

Electronic structure of defects in semiconductor heterojunctions

International Nuclear Information System (INIS)

Haussy, Bernard; Ganghoffer, Jean Francois

2002-01-01

Full text.heterojunctions and semiconductors and superlattices are well known and well used by people interested in optoelectronics communications. Components based on the use of heterojunctions are interesting for confinement of light and increase of quantum efficiency. An heterojunction is the contact zone between two different semiconductors, for example GaAs and Ga 1-x Al x As. Superlattices are a succession of heterojunctions (up to 10 or 20). These systems have been the subjects of many experiments ao analyse the contact between semiconductors. They also have been theoretically studied by different types of approach. The main result of those studies is the prediciton of band discontinuities. Defects in heterojunctions are real traps for charge carriers; they can affect the efficiency of the component decreasing the currents and the fluxes in it. the knowledge of their electronic structure is important, a great density of defects deeply modifies the electronic structure of the whole material creating real new bands of energy in the band structure of the component. in the first part of this work, we will describe the heterostructure and the defect in terms of quantum wells and discrete levels. This approach allows us to show the role of the width of the quantum well describing the structure but induces specific behaviours due to the one dimensional modelling. Then a perturbative treatment is proposed using the Green's functions formalism. We build atomic chains with different types of atoms featuring the heterostructure and the defect. Densities of states of a structure with a defect and levels associated to the defect are obtained. Results are comparable with the free electrons work, but the modelling do not induce problems due to a one dimensional approach. To extend our modelling, a three dimensions approach, based on a cavity model, is investigated. The influence of the defect, - of hydrogenoid type - introduced in the structure, is described by a cavity

Interfacial effects in organic semiconductor heterojunctions

International Nuclear Information System (INIS)

Stadler, P.

2011-01-01

The field of organic electronics has systematically gained interest in recent years, technologically and scientifically advances have been made leading to practical applications such as organic light emitting diodes, organic field-effect transistors and organic photo-voltaic cells. In this thesis a fundamental study on organic molecules is presented targeting on interfacial effects at organic heterojunctions. Generally in organic electronic devices interfaces are considered as key parameters for achieving high performance applications. Therefore in this work the emphasis is to investigate layer-by-layer heterojunctions of organic molecules. Defined heterojunctions at inorganic III-V semiconductors form superlattices and quantum-wells, which lead to interfacial effects summarized as quantum confinement and two-dimensional electron gases. Although organic molecules differ in many aspects from their inorganic counterparts, similar effects can be theoretically expected at organic heterojunctions as well. Organic molecules form van-der-Waals type crystals and domains which are macroscopically anisotropic and polycrystalline or amorphous. Organic molecules are intrinsic semiconductors and at interfaces dipoles are formed, which control the energy level alignment. In order to characterize such structures and compare them to inorganic superlattices and quantum-wells it is necessary to induce charge carriers. In this work this is established either by interfacial doping using high-performance dielectrics in a field-effect transistor structure or by photo-doping by exciting a donor-acceptor bilayer. In both cases C 60 was chosen as organic semiconductor exhibiting good acceptor properties and an electron mobility in the range of 0.5 cm 2 V -1 s -1 . The fabrication of well-defined few-molecular layers allows probing directly at the interface. Spectroscopic methods and transport measurements are applied for characterization: Photoemission spectroscopy, absorption and photo

Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice

Science.gov (United States)

Yin, Zhizhen; Song, Helun; Zhang, Yaohui; Ruiz-García, Miguel; Carretero, Manuel; Bonilla, Luis L.; Biermann, Klaus; Grahn, Holger T.

2017-01-01

Noise-enhanced chaos in a doped, weakly coupled GaAs /Al0.45Ga0.55As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model. When external noise is added, both the measured and simulated current-versus-time traces contain irregularly spaced spikes for particular applied voltages, which separate a regime of periodic current oscillations from a region of no current oscillations at all. In the voltage region without current oscillations, the electric-field profile consist of a low-field domain near the emitter contact separated by a domain wall consisting of a charge accumulation layer from a high-field regime closer to the collector contact. With increasing noise amplitude, spontaneous chaotic current oscillations appear over a wider bias voltage range. For these bias voltages, the domain boundary between the two electric-field domains becomes unstable and very small current or voltage fluctuations can trigger the domain boundary to move toward the collector and induce chaotic current spikes. The experimentally observed features are qualitatively very well reproduced by the simulations. Increased noise can consequently enhance chaotic current oscillations in semiconductor superlattices.

GeTe sequences in superlattice phase change memories and their electrical characteristics

Energy Technology Data Exchange (ETDEWEB)

Ohyanagi, T., E-mail: ohyanagi@leap.or.jp; Kitamura, M.; Takaura, N. [Low-Power Electronics Association and Projects (LEAP), Onogawa 16-1, Tsukuba, Ibaraki 305-8569 (Japan); Araidai, M. [Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Kato, S. [Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan); Shiraishi, K. [Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)

2014-06-23

We studied GeTe structures in superlattice phase change memories (superlattice PCMs) with a [GeTe/Sb{sub 2}Te{sub 3}] stacked structure by X-ray diffraction (XRD) analysis. We examined the electrical characteristics of superlattice PCMs with films deposited at different temperatures. It was found that XRD spectra differed between the films deposited at 200 °C and 240 °C; the differences corresponded to the differences in the GeTe sequences in the films. We applied first-principles calculations to calculate the total energy of three different GeTe sequences. The results showed the Ge-Te-Ge-Te sequence had the lowest total energy of the three and it was found that with this sequence the superlattice PCMs did not run.

Superlattice design for optimal thermoelectric generator performance

Science.gov (United States)

Priyadarshi, Pankaj; Sharma, Abhishek; Mukherjee, Swarnadip; Muralidharan, Bhaskaran

2018-05-01

We consider the design of an optimal superlattice thermoelectric generator via the energy bandpass filter approach. Various configurations of superlattice structures are explored to obtain a bandpass transmission spectrum that approaches the ideal ‘boxcar’ form, which is now well known to manifest the largest efficiency at a given output power in the ballistic limit. Using the coherent non-equilibrium Green’s function formalism coupled self-consistently with the Poisson’s equation, we identify such an ideal structure and also demonstrate that it is almost immune to the deleterious effect of self-consistent charging and device variability. Analyzing various superlattice designs, we conclude that superlattice with a Gaussian distribution of the barrier thickness offers the best thermoelectric efficiency at maximum power. It is observed that the best operating regime of this device design provides a maximum power in the range of 0.32–0.46 MW/m 2 at efficiencies between 54%–43% of Carnot efficiency. We also analyze our device designs with the conventional figure of merit approach to counter support the results so obtained. We note a high zT el   =  6 value in the case of Gaussian distribution of the barrier thickness. With the existing advanced thin-film growth technology, the suggested superlattice structures can be achieved, and such optimized thermoelectric performances can be realized.

Superlattice photonic crystal as broadband solar absorber for high temperature operation.

Science.gov (United States)

Rinnerbauer, Veronika; Shen, Yichen; Joannopoulos, John D; Soljačić, Marin; Schäffler, Friedrich; Celanovic, Ivan

2014-12-15

A high performance solar absorber using a 2D tantalum superlattice photonic crystal (PhC) is proposed and its design is optimized for high-temperature energy conversion. In contrast to the simple lattice PhC, which is limited by diffraction in the short wavelength range, the superlattice PhC achieves solar absorption over broadband spectral range due to the contribution from two superposed lattices with different cavity radii. The superlattice PhC geometry is tailored to achieve maximum thermal transfer efficiency for a low concentration system of 250 suns at 1500 K reaching 85.0% solar absorptivity. In the high concentration case of 1000 suns, the superlattice PhC absorber achieves a solar absorptivity of 96.2% and a thermal transfer efficiency of 82.9% at 1500 K, amounting to an improvement of 10% and 5%, respectively, versus the simple square lattice PhC absorber. In addition, the performance of the superlattice PhC absorber is studied in a solar thermophotovoltaic system which is optimized to minimize absorber re-emission by reducing the absorber-to-emitter area ratio and using a highly reflective silver aperture.

Second harmonic generation in generalized Thue-Morse ferroelectric superlattices

International Nuclear Information System (INIS)

Wang Longxiang; Yang Xiangbo; Chen Tongsheng

2009-01-01

In this paper the second harmonic generation (SHG) in generalized Thue-Morse (GTM(m, n)) ferroelectric superlattices is studied. Under the small-signal approximation, the SHG spectra in both real and reciprocal spaces are investigated. It is found that: (1) only when the structure parameters l, l A , and l B are all chosen to be proper, can SHG in GTM(m, n) ferroelectric superlattices be generated; (2) for Family A of generalized Thue-Morse, GTM(m, 1) ferroelectric systems, with the increase of parameter m, the intense peaks of SHG concentrate on the long wavelength 1.4-1.5μm (the fundamental beam (FB) wavelength is within 0.8-1.5μm), but for Family B of generalized Thue-Morse, GTM(1, n) ferroelectric superlattices, with the increase of parameter n, the intense peaks of SHG concentrate on the middle wavelength 1.1-1.2μm; and (3) for GTM(m, 1) ferroelectric superlattices, the bigger the m, the stronger the relative integral intensity (RII) of SHG would be, but for GTM(1, n) ferroelectric systems, the bigger the n, the weaker the RII of SHG would be.

Passive high-frequency devices based on superlattice ferromagnetic nanowires

International Nuclear Information System (INIS)

Ye, B.; Li, F.; Cimpoesu, D.; Wiley, J.B.; Jung, J.-S.; Stancu, A.; Spinu, L.

2007-01-01

In this paper we propose to tailor the bandwidth of a microwave filter by exploitation of shape anisotropy of nanowires. In order to achieve this control of shape anisotropy, we considered superlattice wires containing varying-sized ferromagnetic regions separated by nonferromagnetic regions. Superlattice wires of Ni and Au with a nominal diameter of 200 nm were grown using standard electrodeposition techniques. The microwave properties were probed using X-band (9.8 GHz) ferromagnetic resonance (FMR) experiments performed at room temperature. In order to investigate the effectiveness of the shape anisotropy on the superlattice nanowire based filter the FMR spectrum of superlattice structure is compared to the FMR spectra of nanowires samples with constant length

Quasiperiodic AlGaAs superlattices for neuromorphic networks and nonlinear control systems

Energy Technology Data Exchange (ETDEWEB)

Malyshev, K. V., E-mail: malyshev@bmstu.ru [Electronics and Laser Technology Department, Bauman Moscow State Technical University, Moscow 105005 (Russian Federation)

2015-01-28

The application of quasiperiodic AlGaAs superlattices as a nonlinear element of the FitzHugh–Nagumo neuromorphic network is proposed and theoretically investigated on the example of Fibonacci and figurate superlattices. The sequences of symbols for the figurate superlattices were produced by decomposition of the Fibonacci superlattices' symbolic sequences. A length of each segment of the decomposition was equal to the corresponding figurate number. It is shown that a nonlinear network based upon Fibonacci and figurate superlattices provides better parallel filtration of a half-tone picture; then, a network based upon traditional diodes which have cubic voltage-current characteristics. It was found that the figurate superlattice F{sup 0}{sub 11}(1) as a nonlinear network's element provides the filtration error almost twice less than the conventional “cubic” diode. These advantages are explained by a wavelike shape of the decreasing part of the quasiperiodic superlattice's voltage-current characteristic, which leads to multistability of the network's cell. This multistability promises new interesting nonlinear dynamical phenomena. A variety of wavy forms of voltage-current characteristics opens up new interesting possibilities for quasiperiodic superlattices and especially for figurate superlattices in many areas—from nervous system modeling to nonlinear control systems development.

Sm cluster superlattice on graphene/Ir(111)

Science.gov (United States)

Mousadakos, Dimitris; Pivetta, Marina; Brune, Harald; Rusponi, Stefano

2017-12-01

We report on the first example of a self-assembled rare earth cluster superlattice. As a template, we use the moiré pattern formed by graphene on Ir(111); its lattice constant of 2.52 nm defines the interparticle distance. The samarium cluster superlattice forms for substrate temperatures during deposition ranging from 80 to 110 K, and it is stable upon annealing to 140 K. By varying the samarium coverage, the mean cluster size can be increased up to 50 atoms, without affecting the long-range order. The spatial order and the width of the cluster size distribution match the best examples of metal cluster superlattices grown by atomic beam epitaxy on template surfaces.

XYO{sub 3} (X = K, Na; Y = Nb, Ta) based superlattices for photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Wang, Guang-Zhao; Chen, Xiao-Rui; Yuan, Hong-Kuan; Kuang, An-Long [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Chen, Hong [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Key Laboratory of Luminescent and Real-Time Analytical Chemistry, Ministry of Education, College of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715 (China)

2017-05-15

The photocatalytic activities of XYO{sub 3} (X = K, Na; Y = Ta, Nb) and XYO{sub 3}/X1Y1O{sub 3} (X, X1 = K, Na; Y, Y1 = Ta, Nb) systems are investigated by using hybrid density functional. All the XYO{sub 3} and XYO{sub 3}/X1Y1O{sub 3} systems are indirect band gap semiconductors, and the band gap of KNbO{sub 3}/KTaO{sub 3} is smaller than those of KNbO{sub 3} and KTaO{sub 3}, while the band gaps of KNbO{sub 3}/NaNbO{sub 3}, KNbO{sub 3}/NaTaO{sub 3}, KTaO{sub 3}/NaNbO{sub 3}, KTaO{sub 3}/NaTaO{sub 3}, and NaNbO{sub 3}/NaTaO{sub 3} are respectively between the band gaps of these two crystals which make up these superlattices. The electronic structure of KNbO{sub 3}/NaTaO{sub 3} is the same as that of KTaO{sub 3}/NaNbO{sub 3} since both have the same component and similar crystal structure. The band edges of all the considered superlattices are thermodynamically allowed for the water reduction and oxidation processes, and therefore, they could be used for photocatalytic water splitting. Band structures for (i) KNbO{sub 3}/KTaO{sub 3}, (ii) KNbO{sub 3}/NaNbO{sub 3}, (iii) KNbO{sub 3}/NaTaO{sub 3}, (iv) KTaO{sub 3}/NaNbO{sub 3}, (v) KTaO{sub 3}/NaTaO{sub 3}, and (vi) NaNbO{sub 3}/NaTaO{sub 3} superlattices. The horizontal dashed lines represent the Fermi levels. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Tunable superlattice in graphene to control the number of Dirac points.

Science.gov (United States)

Dubey, Sudipta; Singh, Vibhor; Bhat, Ajay K; Parikh, Pritesh; Grover, Sameer; Sensarma, Rajdeep; Tripathi, Vikram; Sengupta, K; Deshmukh, Mandar M

2013-09-11

Superlattice in graphene generates extra Dirac points in the band structure and their number depends on the superlattice potential strength. Here, we have created a lateral superlattice in a graphene device with a tunable barrier height using a combination of two gates. In this Letter, we demonstrate the use of lateral superlattice to modify the band structure of graphene leading to the emergence of new Dirac cones. This controlled modification of the band structure persists up to 100 K.

Piezoelectricity in the dielectric component of nanoscale dielectric-ferroelectric superlattices.

Science.gov (United States)

Jo, Ji Young; Sichel, Rebecca J; Lee, Ho Nyung; Nakhmanson, Serge M; Dufresne, Eric M; Evans, Paul G

2010-05-21

The origin of the functional properties of complex oxide superlattices can be resolved using time-resolved synchrotron x-ray diffraction into contributions from the component layers making up the repeating unit. The CaTiO3 layers of a CaTiO3/BaTiO3 superlattice have a piezoelectric response to an applied electric field, consistent with a large continuous polarization throughout the superlattice. The overall piezoelectric coefficient at large strains, 54  pm/V, agrees with first-principles predictions in which a tetragonal symmetry is imposed on the superlattice by the SrTiO3 substrate.

Superlattice configurations in linear chain hydrocarbon binary mixtures

Indian Academy of Sciences (India)

Unknown

Long-chain alkanes; binary mixtures; superlattices; discrete orientational changes. 1. Introduction ... tem and a model of superlattice configuration was proposed4, in terms of .... C18 system,4 the angle with value = 3⋅3° was seen to play an ...

Electronic properties of a new structured Sin/O superlattice

Directory of Open Access Journals (Sweden)

S. Yu

2016-11-01

Full Text Available Silicon is a material which dominants the semiconductor industry and has a well-established processing technology based on it. However, silicon has an indirect-bandgap and is not efficient in light emitting. This limits its applications in optoelectronics. In this paper, we proposed a new structural model for the silicon-based superlattice, i.e., the Sin/O one. The model consists of alternating films of n-layers of Si and a monolayer of oxygen along z-direction, together with a surface cell of Si(001 (2×1 reconstruction in the x-y plane. The importance of employing such a Si(001 (2×1 reconstruction is that all the electrons at interface can be strongly bonded. Our results showed interesting electronic properties, e.g., the band folding and large band gap of bulk Si, when the thickness of the silicon layers was increased (but still thin. Our structure might also offer other interesting properties.

Magnetic profiles in ferromagnetic/superconducting superlattices.

Energy Technology Data Exchange (ETDEWEB)

te Velthuis, S. G. E.; Hoffmann, A.; Santamaria, J.; Materials Science Division; Univ. Complutense de Madrid

2007-02-28

The interplay between ferromagnetism and superconductivity has been of longstanding fundamental research interest to scientists, as the competition between these generally mutually exclusive types of long-range order gives rise to a rich variety of physical phenomena. A method of studying these exciting effects is by investigating artificially layered systems, i.e. alternating deposition of superconducting and ferromagnetic thin films on a substrate, which enables a straight-forward combination of the two types of long-range order and allows the study of how they compete at the interface over nanometer length scales. While originally studies focused on low temperature superconductors interchanged with metallic ferromagnets, in recent years the scope has broadened to include superlattices of high T{sub c} superconductors and colossal magnetoresistance oxides. Creating films where both the superconducting as well as the ferromagnetic layers are complex oxide materials with similar crystal structures (Figure 1), allows the creation of epitaxial superlattices, with potentially atomically flat and ordered interfaces.

Film thickness determining method of the silicon isotope superlattices by SIMS

International Nuclear Information System (INIS)

Takano, Akio; Shimizu, Yasuo; Itoh, Kohei M.

2008-01-01

It is becoming important to evaluate silicon self-diffusion with progress of a silicon semiconductor industry. In order to evaluate the self-diffusion of silicon, silicon isotope superlattices (SLs) is the only marker. For this reason, it is important to correctly evaluate a film thickness and a depth distribution of isotope SLs by secondary ion mass spectrometry (SIMS). As for film thickness, it is difficult to estimate the thicknesses correctly if the cycles of SLs are short. In this work, first, we report the determination of the film thickness for short-period SLs using mixing roughness-information (MRI) analysis to SIMS profile. Next, the uncertainty of the conventional method to determine the film thicknesses of SLs is determined. It was found that the conventional methods cannot correctly determine film thickness of short-period-isotope SLs where film thickness differs for every layer

Effect of layer composition on band spectrum of CdxHg1-xTe - CdyHg1-yTe-type superlattices

International Nuclear Information System (INIS)

Gerchikov, L.G.; Subashiev, A.V.; Salman Dalla

1993-01-01

Evolution of energy spectrum of Cd x Hg 1-x Te -Cd y Hg 1-y Te superlattices at variation of layer composition is considered. Transition from 3 type superlattice to 1 type superlattice occurring for y=0.16 is studied comprehensively. In this case, dependence of the width of superlattice forbidden zone on layer thickness is shown to become more smooth, than in CdTe - HgTe superlattice and it gives more possibilities to use such superlattices for making IR phototransistors. 10 refs., 4 figs

Superlattice to nanoelectronics

CERN Document Server

Tsu, Raphael

2005-01-01

Superlattice to Nanoelectronics provides a historical overview of the early work performed by Tsu and Esaki, to orient those who want to enter into this nanoscience. It describes the fundamental concepts and goes on to answer many questions about todays 'Nanoelectronics'. It covers the applications and types of devices which have been produced, many of which are still in use today. This historical perspective is important as a guide to what and how technology and new fundamental ideas are introduced and developed. The author communicates a basic understanding of the physics involved from first principles, whilst adding new depth, using simple mathematics and explanation of the background essentials. Topics covered include * Introductory materials * Superlattice, Bloch oscillations and transport * Tunneling in QWs to QDs * Optical properties: optical transitions, size dependent dielectric constant, capacitance and doping * Quantum devices: New approaches without doping and heterojunctions - quantum confinement...

Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

Energy Technology Data Exchange (ETDEWEB)

Tuz, Vladimir R., E-mail: tvr@rian.kharkov.ua

2016-12-01

In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

International Nuclear Information System (INIS)

Tuz, Vladimir R.

2016-01-01

In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

Faraday effect in semimagnetic semiconductors

International Nuclear Information System (INIS)

Nikitin, P.I.; Savchuk, A.I.

1990-01-01

Experimental and theoretical studies of the Faraday effect in a new class of materials -semimagnetic semiconductors (SS) have been received. Mechanisms of the giant Faraday effect in SS based on s, p-d exchange interaction of excitons, electrons and holes with magnetic ions have been discussed. Faraday rotation as a function of a radiation wavelength, magnetic component concentration, temperature, magnetic field intensity for crystals A 2 B 6 (Mn)A 2 x -1Mn xB 6 : and other SS (GaAs(Mn), CdP 2 (Mn),Pb 1-X2 )Mn x J 2 have been considered. We have attended to use FR for the study of a paramagnetic-spin glass transmission for determining the role of the relaxation effects with a participation of magnetic Mn 2+ ions, exitons, polarons in the direct and inverse Faraday effects. In addition the features of FR in thin films of SS and in spin superlattices have been discussed. Finally, we have analysed possibilities of applying the SS Faraday effect for developing magnetooptic devices (optical isolators and fibre optic sensors of magnetic fields)

Time-resolved optical studies of wide-gap II-VI semiconductor heterostructures

Science.gov (United States)

Wang, Hong

ZnSe and ZnSe-based quantum well and superlattice structures are potential candidates for light emitting devices and other optical devices such as switches and modulators working in the blue-green wavelength range. Carrier dynamics studies of these structures are important in evaluating device performance as well as understanding the underlying physical processes. In this thesis, a carrier dynamics investigation is conducted for temperature from 77K to 295K on CdZnSSe/ZnSSe single quantum well structure (SQW) and ZnSe/ZnSTe superlattice fabricated by molecular beam epitaxy (MBE). Two experimental techniques with femtosecond time resolution are used in this work: up-conversion technique for time- resolved photoluminescence (PL) and pump-probe technique for time-resolved differential absorption studies. For both heterostructures, the radiative recombination is dominated by exciton transition due to the large exciton binding energy as a result of quantum confinement effect. The measured decay time of free exciton PL in CdZnSSe/ZnSSe SQW increases linearly with increasing temperature which agrees with the theoretical prediction by considering the conservation of momentum requirement for radiative recombination. However, the recombination of free carriers is also observed in CdZnSSe/ZnSSe SQW for the whole temperature range studied. On the other hand, in ZnSe/ZnSTe superlattice structures, the non- radiative recombination processes are non-negligible even at 77K and become more important in higher temperature range. The relaxation processes such as spectral hole burning, carrier thermalization and hot-carrier cooling are observed in ZnSe/ZnSTe superlattices at room temperature (295K) by the femtosecond pump-probe measurements. A rapid cooling of the thermalized hot- carrier from 763K to 450K within 4ps is deduced. A large optical nonlinearity (i.e., the induced absorption change) around the heavy-hole exciton energy is also obtained.

Transport in a magnetic field modulated graphene superlattice.

Science.gov (United States)

Li, Yu-Xian

2010-01-13

Using the transfer matrix method, we study the transport properties through a magnetic field modulated graphene superlattice. It is found that the electrostatic barrier, the magnetic vector potential, and the number of wells in a superlattice modify the transmission remarkably. The angular dependent transmission is blocked by the magnetic vector potential because of the appearance of the evanescent states at certain incident angles, and the region of Klein tunneling shifts to the left. The angularly averaged conductivities exhibit oscillatory behavior. The magnitude and period of oscillation depend sensitively on the height of the electrostatic barrier, the number of wells, and the strength of the modulated magnetic field.

RAMAN SCATTERING BY ACOUSTIC PHONONS AND STRUCTURAL PROPERTIES OF FIBONACCI, THUE-MORSE AND RANDOM SUPERLATTICES

OpenAIRE

Merlin , R.; Bajema , K.; Nagle , J.; Ploog , K.

1987-01-01

We report structural studies of incommensurate and random GaAs-AlAs superlattices using Raman scattering by acoustic phonons. Properties of the structure factor of Fibonacci and Thue-Morse superlattices are discussed in some detail.

Scanning tunnel microscopy of semiconductor nanostructures

International Nuclear Information System (INIS)

Eder, C.

1997-09-01

In this work a scanning tunneling microscope (STM) is utilized as a surface sensitive tool for local characterization of internal potential profiles of GaAs/AlGaAs heterostructures. The STM is operated at variable temperatures under ambient conditions, i.e. either in air or in the variable temperature insert of a cryostat. Distinct local differences between current-voltage curves taken on inverted heterostructures, which were patterned by wet chemically etching, are found. The spectroscopic differences can be ascribed to the internal potential profile in the subsurface regions of the sample. Current imaging tunneling spectroscopy (CITS) is applied to study quantum wire regions. It is found that the magnitude of the CITS-current is an indirect measure of edge depletion zones, which are much larger at 4.2 K. Direct measurements of relevant energy levels in quantum structures were obtained by ballistic electron emission microscopy (BEEM). It is shown that this 3-terminal technique is an excellent tool for transport characterization of minibands formed in semiconductor superlattices. Furthermore, low dimensional electron gases are shown to act as very efficient collector electrodes at low temperatures. For the first time, BEEM experiments were performed at 4.2 K. The enhanced thermal resolution at 4.2 K allows an analysis of the relevant scattering processes. It is found that the collector current is strongly influenced by diffusive scattering at the metal/semiconductor interface. (author)

Spectral properties of waves in superlattices with 2D and 3D inhomogeneities

International Nuclear Information System (INIS)

Ignatchenko, V. A.; Tsikalov, D. S.

2011-01-01

We investigate the dynamic susceptibility and one-dimensional density of states in an initially sinusoidal superlattice containing simultaneously 2D phase inhomogeneities simulating correlated rough-nesses of superlattice interfaces and 3D amplitude inhomogeneities of the superlattice layer materials. The analytic expression for the averaged Green’s function of the sinusoidal superlattice with two phase inhomogeneities is derived in the Bourret approximation. It is shown that the effect of increasing asymmetry in the peak heights of dynamic susceptibility at the Brillouin zone boundary of the superlattice, which was discovered earlier [15] upon an increase in root-mean-square (rms) fluctuations, also takes place upon an increase in the correlation wavenumber of inhomogeneities. However, the peaks in this case also become closer, and the width and depth of the gap in the density of states decrease thereby. It is shown that the enhancement of rms fluctuations of 3D amplitude inhomogeneities in a superlattice containing 2D phase inhomogeneities suppresses the effect of dynamic susceptibility asymmetry and leads to a slight broadening of the gap in the density of states and a decrease in its depth. Targeted experiments aimed at detecting the effects studied here would facilitate the development of radio-spectroscopic and optical methods for identifying the presence of inhomogeneities of various dimensions in multilayer magnetic and optical structures.

Formation Energies of Native Point Defects in Strained-Layer Superlattices (Postprint)

Science.gov (United States)

2017-06-05

potential; bulk materials; total energy calculations; entropy; strained- layer superlattice (SLS) 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF...AFRL-RX-WP-JA-2017-0217 FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES (POSTPRINT) Zhi-Gang Yu...2016 Interim 11 September 2013 – 5 November 2016 4. TITLE AND SUBTITLE FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES

Alternating current-driven graphene superlattices: Kinks, dissipative solitons, dynamic chaotization

International Nuclear Information System (INIS)

Kryuchkov, S. V.; Kukhar', E. I.

2015-01-01

The possibility of the solitary electromagnetic wave formation in graphene superlattice subjected to the electromagnetic radiation is discussed. The chaotic behavior of the electron subsystem in graphene superlattice is studied by Melnikov method. Dynamic chaos of electrons is shown to appear for certain intervals of frequencies of incident electromagnetic radiation. The frequency dependence of the radiation critical amplitude which determines the bound of chaos appearance is investigated. The values of radiation frequency at which the critical amplitude increases indefinitely were found

Superlattice doped layers for amorphous silicon photovoltaic cells

Science.gov (United States)

Arya, Rajeewa R.

1988-01-12

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

Thermoelectric transport in superlattices

Energy Technology Data Exchange (ETDEWEB)

Reinecke, T L; Broido, D A

1997-07-01

The thermoelectric transport properties of superlattices have been studied using an exact solution of the Boltzmann equation. The role of heat transport along the barrier layers, of carrier tunneling through the barriers, of valley degeneracy and of the well width and energy dependences of the carrier-phonon scattering rates on the thermoelectric figure of merit are given. Calculations are given for Bi{sub 2}Te{sub 3} and for PbTe, and the results of recent experiments are discussed.

InN/GaN Superlattices: Band Structures and Their Pressure Dependence

DEFF Research Database (Denmark)

Gorczyca, Iza; Suski, Tadek; Staszczak, Grzegorz

2013-01-01

Creation of short-period InN/GaN superlattices is one of the possible ways of conducting band gap engineering in the green-blue range of the spectrum. The present paper reports results of photoluminescence experiments, including pressure effects, on a superlattice sample consisting of unit cells...... with one monolayer of InN and 40 monolayers of GaN. The results are compared with calculations performed for different types of superlattices: InN/GaN, InGaN/GaN, and InN/InGaN/GaN with single monolayers of InN and/or InGaN. The superlattices are simulated by band structure calculations based on the local...... density approximation (LDA) with a semi-empirical correction for the ‘‘LDA gap error’’. A similarity is observed between the results of calculations for an InGaN/GaN superlattice (with one monolayer of InGaN) and the experimental results. This indicates that the fabricated InN quantum wells may contain...

Stability and Dynamic of strain mediated Adatom Superlattices on Cu<111>

OpenAIRE

Kappus, Wolfgang

2012-01-01

Substrate strain mediated adatom density distributions have been calculated for Cu surfaces. Complemented by Monte Carlo calculations a hexagonal close packaged adatom superlattice in a coverage range up to 0.045 ML is derived. Conditions for the stability of the superlattice against nucleation and degradation are analyzed using simple neighborhood models. Such models are also used to investigate the dynamic of adatoms within their superlattice neighborhood. Collective modes of adatom diffusi...

Magnetism and superconductivity in neodymium/lanthanum superlattices

DEFF Research Database (Denmark)

Goff, J.P.; Sarthour, R.S.; McMorrow, Desmond Francis

1997-01-01

bilayers. Magnetization studies reveal the onset of superconductivity at a temperature comparable to bulk DHCP La, and the results suggest coupling across the antiferromagnetic Nd layers. The magnetic structures, investigated using neutron diffraction techniques, resemble those found in bulk Nd....... For the cubic sites of the DHCP structure the magnetic order is confined to individual Nd blocks. However, the magnetic order on the Nd hexagonal sites propagates coherently through the La, even when it becomes superconducting. (C) 1998 Elsevier Science B.V. All rights reserved.......A single-crystal Nd30La10 superlattice grown using molecular beam epitaxy is found to consist of alternating antiferromagnetic and superconducting layers at low temperature. The superlattice has the DHCP crystal structure, and the stacking sequence of close-packed planes is coherent over many...

Exploration of molecular interactions in cholesterol superlattices: effect of multibody interactions.

Science.gov (United States)

Huang, Juyang

2002-08-01

Experimental evidences have indicated that cholesterol may adapt highly regular lateral distributions (i.e., superlattices) in a phospholipid bilayer. We investigated the formations of superlattices at cholesterol mole fraction of 0.154, 0.25, 0.40, and 0.5 using Monte Carlo simulation. We found that in general, conventional pairwise-additive interactions cannot produce superlattices. Instead, a multibody (nonpairwise) interaction is required. Cholesterol superlattice formation reveals that although the overall interaction between cholesterol and phospholipids is favorable, it contains two large opposing components: an interaction favoring cholesterol-phospholipid mixing and an unfavorable acyl chain multibody interaction that increases nonlinearly with the number of cholesterol contacts. The magnitudes of interactions are in the order of kT. The physical origins of these interactions can be explained by our umbrella model. They most likely come from the requirement for polar phospholipid headgroups to cover the nonpolar cholesterol to avoid the exposure of cholesterol to water and from the sharp decreasing of acyl chain conformation entropy due to cholesterol contact. This study together with our previous work demonstrate that the driving force of cholesterol-phospholipid mixing is a hydrophobic interaction, and multibody interactions dominate others over a wide range of cholesterol concentration.

Participation of mechanical oscillations in thermodynamics of crystals with superlattice

International Nuclear Information System (INIS)

Jacjimovski K, S.; Mirjanicj Lj, D.; Shetrajchicj P, J.

2012-01-01

The superlattice, consisting of two periodically repeating films, is analyzed in proposal paper. Due to the structural deformations and small thickness, the acoustic phonons do not appear in these structures. The spontaneous appearance of phonons is possible in an ideal structure only. Therefore the thermodynamical analysis of phonon subsystems is the first step in investigations of superlattice properties. Internal energy as well as specific heat will be analyzed, too. Low-temperature behavior of these quantities will be compared to the corresponding quantities of bulk structures and of thin films. The general conclusion is that the main thermodynamic characteristics of superlattices are considerably lower than those of the bulk structure. Consequently, their superconductive characteristics are better than the superconductive characteristics of corresponding bulk structures. Generally considered, the application field of superlattices is wider than that of bulk structures and films. (Author)

Band structure and optical properties of sinusoidal superlattices: ZnSe1-xTex

International Nuclear Information System (INIS)

Yang, G.; Lee, S.; Furdyna, J. K.

2000-01-01

This paper examines the band structure and optical selection rules in superlattices with a sinusoidal potential profile. The analysis is motivated by the recent successful fabrication of high quality ZnSe 1-x Te x superlattices in which the composition x varies sinusoidally along the growth direction. Although the band alignment in the ZnSe 1-x Te x sinusoidal superlattices is staggered (type II), they exhibit unexpectedly strong photoluminescence, thus suggesting interesting optical behavior. The band structure of such sinusoidal superlattices is formulated in terms of the nearly-free-electron (NFE) approximation, in which the superlattice potential is treated as a perturbation. The resulting band structure is unique, characterized by a single minigap separating two wide, free-electron-like subbands for both electrons and holes. Interband selection rules are derived for optical transitions involving conduction and valence-band states at the superlattice Brillouin-zone center, and at the zone edge. A number of transitions are predicted due to wave-function mixing of different subband states. It should be noted that the zone-center and zone-edge transitions are especially easy to distinguish in these superlattices because of the large width of the respective subbands. The results of the NFE approximation are shown to hold surprisingly well over a wide range of parameters, particularly when the period of the superlattice is short. (c) 2000 The American Physical Society

Computer simulation of the anomalous elastic behavior of thin films and superlattices

International Nuclear Information System (INIS)

Wolf, D.

1992-10-01

Atomistic simulations are reviewed that elucidate the causes of the anomalous elastic behavior of thin films and superlattices (the so-called supermodulus effect). The investigation of free-standing thin films and of superlattices of grain boundaries shows that the supermodulus effect is not an electronic but a structural interface effect intricately connected with the local atomic disorder at the interfaces. The consequent predictions that (1) coherent strained-layer superlattices should show the smallest elastic anomalies and (2) the introduction of incoherency at the interfaces should enhance all anomalies are validated by simulations of dissimilar-material superlattices. 38 refs, 10 figs

Lateral structure of (TiSe2)n(NbSe2)m superlattices

International Nuclear Information System (INIS)

Noh, M.; Shin, H.; Jeong, K.; Spear, J.; Johnson, D.C.; Kevan, S.D.; Warwick, T.

1997-01-01

The structures of a series of (TiSe 2 ) n (NbSe 2 ) m superlattices grown through controlled crystallization of designed multilayer reactants have been studied. X-ray diffraction of the data of the superlattices after crystallization show considerable preferred orientation, with the basal plane of the dichalcogenide structure parallel to the substrate to within 0.1 degree. Lattice refinement using the observed (00scr(l)) diffraction maxima yields lattice parameters along the c axis that are consistent with those expected based on the target superlattices and lattice parameters of the binary constituents. These (00scr(l)) diffraction data, however, contain no information about the crystalline structure in the ab plane of the superlattice associated with the preferred c-axis orientation. Off-specular x-ray diffraction (XRD), scanning electron microscopy, and scanning transmission x-ray microscopy (STXM) were used to explore the structure and homogeneity of the superlattices in the ab plane. XRD results rule out preferred long-range orientational order of the ab plane. Between grains, both the backscattered electron images and STXM images show grain domain structure in the ab plane with a characteristic grain domain size of approximately 50 μm. X-ray absorption microscopy in the STXM mode obtained at the Ti L 2,3 edge shows that the titanium in the superlattices is present as both octahedral Ti consistent with the TiSe 2 structure and metallic Ti. A comparison of the data obtained from these techniques highlights chemical information, which can be deduced on a submicrometer range from the space resolved spectra obtained using STXM. copyright 1997 American Institute of Physics

Crossover from incoherent to coherent phonon scattering in epitaxial oxide superlattices.

Science.gov (United States)

Ravichandran, Jayakanth; Yadav, Ajay K; Cheaito, Ramez; Rossen, Pim B; Soukiassian, Arsen; Suresha, S J; Duda, John C; Foley, Brian M; Lee, Che-Hui; Zhu, Ye; Lichtenberger, Arthur W; Moore, Joel E; Muller, David A; Schlom, Darrell G; Hopkins, Patrick E; Majumdar, Arun; Ramesh, Ramamoorthy; Zurbuchen, Mark A

2014-02-01

Elementary particles such as electrons or photons are frequent subjects of wave-nature-driven investigations, unlike collective excitations such as phonons. The demonstration of wave-particle crossover, in terms of macroscopic properties, is crucial to the understanding and application of the wave behaviour of matter. We present an unambiguous demonstration of the theoretically predicted crossover from diffuse (particle-like) to specular (wave-like) phonon scattering in epitaxial oxide superlattices, manifested by a minimum in lattice thermal conductivity as a function of interface density. We do so by synthesizing superlattices of electrically insulating perovskite oxides and systematically varying the interface density, with unit-cell precision, using two different epitaxial-growth techniques. These observations open up opportunities for studies on the wave nature of phonons, particularly phonon interference effects, using oxide superlattices as model systems, with extensive applications in thermoelectrics and thermal management.

pi-phase magnetism in ferromagnetic-superconductor superlattices

CERN Document Server

Khusainov, M G; Proshin, Y N

2001-01-01

The Larkin-Ovchinnikov-Fylde-Ferrel new 0 pi- and pi pi-states are forecasted for the ferromagnetic metal/superconductor superlattices with antiferromagnetic magnetization orientation in the neighbouring layers. The above-mentioned states are characterized under certain conditions by higher critical temperature T sub c as compared to the earlier known LOFF 00- and pi 0-states with the FM-layers ferromagnetic ordering. It is shown that the nonmonotonous behavior of the T sub c of the FM/S superlattices by the thickness of the S-layers lower than the d sub s suppi value is connected with the cascades of the 0 pi-pi pi-0 pi phase transitions. The character of the T sub c oscillations by the d sub s > d sub s suppi is related to the 00-pi 0-00 transitions. The logical elements of the new type, combining the advantages of the superconducting and magnetic information recording in one sample are proposed on the basis of the FM/S superlattices

Electron Backscatter Diffraction Studies on the Formation of Superlattice Metal Hydride Alloys

Directory of Open Access Journals (Sweden)

Shuli Yan

2017-12-01

Full Text Available Microstructures of a series of La-Mg-Ni-based superlattice metal hydride alloys produced by a novel method of interaction of a LaNi5 alloy and Mg vapor were studied using a combination of X-ray energy dispersive spectroscopy and electron backscatter diffraction. The conversion rate of LaNi5 increased from 86.8% into 98.2%, and the A2B7 phase abundance increased from 42.5 to 45.8 wt % and reduced to 39.2 wt % with the increase in process time from four to 32 h. During the first stage of reaction, Mg formed discrete grains with the same orientation, which was closely related to the orientation of the host LaNi5 alloy. Mg then diffused through the ab-phase of LaNi5 and formed the AB2, AB3, and A2B7 phases. Diffusion of Mg stalled at the grain boundary of the host LaNi5 alloy. Good alignments in the c-axis between the newly formed superlattice phases and LaNi5 were observed. The density of high-angle grain boundary decreased with the increase in process time and was an indication of lattice cracking.

Density functional theory computational study of ferroelectricity and piezoelectricity in BaTiO3/PbTiO3 (0 1 1) superlattices

Science.gov (United States)

Lou, Yaoding; Deng, Junkai; Zhe Liu, Jefferson

2018-04-01

The structure, ferroelectricity (FE), and piezoelectricity of epitaxial BaTiO3/PbTiO3 (BTO/PTO) (0 1 1) superlattices are studied using density functional theory calculations. Our results show that compressive strain arising from the SrTiO3 (0 1 1) substrate stabilizes the (BTO) m /(PTO) n (0 1 1) superlattices in orthorhombic phase with the FE polarization along [0 1 1] direction. Tuning the BTO contents significantly changes the structural, ferroelectric and piezoelectric properties. The FE polarization of superlattices significantly drops with increasing BTO contents, which can be attributed to depolarization of the PTO layers. The averaged c/a ratio of the whole superlattices exhibits anomalous non-monotonic relation with respect to BTO contents. Interestingly, our results predict the (0 1 1) superlattices can enhance the piezoelectric coefficient e 33 with a maximum value at ~67% BTO concentration. This result suggests a potential avenue to design high performance piezoelectric materials with less Pb contents. In-depth analysis reveals the B-site Ti cation as the origin for the enhanced e 33 value, which implies the potential of B-site cation engineering in perovskite heterostructure designs.

Control of phonon transport by the formation of the Al2O3 interlayer in Al2O3-ZnO superlattice thin films and their in-plane thermoelectric energy generator performance.

Science.gov (United States)

Park, No-Won; Ahn, Jay-Young; Park, Tae-Hyun; Lee, Jung-Hun; Lee, Won-Yong; Cho, Kwanghee; Yoon, Young-Gui; Choi, Chel-Jong; Park, Jin-Seong; Lee, Sang-Kwon

2017-06-01

Recently, significant progress has been made in increasing the figure-of-merit (ZT) of various nanostructured materials, including thin-film and quantum dot superlattice structures. Studies have focused on the size reduction and control of the surface or interface of nanostructured materials since these approaches enhance the thermopower and phonon scattering in quantum and superlattice structures. Currently, bismuth-tellurium-based semiconductor materials are widely employed for thermoelectric (TE) devices such as TE energy generators and coolers, in addition to other sensors, for use at temperatures under 400 K. However, new and promising TE materials with enhanced TE performance, including doped zinc oxide (ZnO) multilayer or superlattice thin films, are also required for designing solid-state TE power generating devices with the maximum output power density and for investigating the physics of in-plane TE generators. Herein, we report the growth of Al 2 O 3 /ZnO (AO/ZnO) superlattice thin films, which were prepared by atomic layer deposition (ALD), and the evaluation of their electrical and TE properties. All the in-plane TE properties, including the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ), of the AO/ZnO superlattice (with a 0.82 nm-thick AO layer) and AO/ZnO films (with a 0.13 nm-thick AO layer) were evaluated in the temperature range 40-300 K, and the measured S, σ, and κ were -62.4 and -17.5 μV K -1 , 113 and 847 (Ω cm) -1 , and 0.96 and 1.04 W m -1 K -1 , respectively, at 300 K. Consequently, the in-plane TE ZT factor of AO/ZnO superlattice films was found to be ∼0.014, which is approximately two times more than that of AO/ZnO films (ZT of ∼0.007) at 300 K. Furthermore, the electrical power generation efficiency of the TE energy generator consisting of four couples of n-AO/ZnO superlattice films and p-Bi 0.5 Sb 1.5 Te 3 (p-BST) thin-film legs on the substrate was demonstrated. Surprisingly, the output

Lateral surface superlattices in strained InGaAs layers

International Nuclear Information System (INIS)

Milton, B.

2000-08-01

Lateral Surface Superlattices were fabricated by etching in strained InGaAs layers above a GaAs/AlGaAs 2DEG channel. These were etched both by dry plasma wet chemical etching to produce periods of 100nm, 200nm and 300nm. These superlattices were fabricated on Hall bars to allow four terminal measurement and a blanket gate was placed on top, to allow variations in the carrier concentration. The magnetoresistance effects of these superlattices were studied at varying values of gate voltage, which varies the carrier concentration and the electrostatic periodic potential and at temperatures down to 45mK in a dilution refrigerator. From the oscillations observed in the magnetoresistance trace's it is possible to calculate the magnitude of the periodic potential. This showed that the etched, strained InGaAs was producing an anisotropic piezoelectric potential, along with an isotropic electrostatic potential. The variation in period allowed a study of the change of this piezoelectric potential with the period as well as a study of the interactions between the electrostatic and piezoelectric potentials. Further, at the lowest temperatures a strong interaction was observed between the Commensurability Oscillations, caused by the periodic potential, and the Shubnikov-de Haas Oscillations due to the Landau. Levels. This interaction was studied as it varied with temperature and carrier concentration. (author)

Fabrication of C60/amorphous carbon superlattice structures

International Nuclear Information System (INIS)

Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2001-01-01

The nitrogen doping effects in C 60 films by RF plasma source was investigated, and it was found that the nitrogen ion bombardment broke up C 60 molecules and changed them into amorphous carbon. Based on these results, formation of C 60 /amorphous carbon superlattice structure was proposed. The periodic structure of the resulted films was confirmed by XRD measurements, as the preliminary results of fabrication of the superlattice structure

Dependence of Fe/Cr superlattice magnetoresistance on orientation of external magnetic field

International Nuclear Information System (INIS)

Ustinov, V.V.; Romashev, L.N.; Minin, V.I.; Semerikov, A.V.; Del', A.R.

1995-01-01

The paper presents the results of investigations into giant magnetoresistance of [Fe/Cr] 30 /MgO superlattices obtained using molecular-beam epitaxy under various orientations of magnetic field relatively to the layers of superlattice and to the direction of current flow. Theory of orientation dependence of superlattice magnetoresistance enabling to describe satisfactorily behaviour of magnetoresistance at arbitrary direction of magnetic field on the ground of results of magnetoresistance measurements in magnetic field parallel and perpendicular to plane of layers, is elaborated. It is pointed out that it is possible to obtain field dependence of superlattice magnetization on the ground of measurement results. 9 refs., 6 figs

Raman Scattering and Surface Photovoltage Spectroscopy Studies of InGaAs/GaAs Radial Superlattices

Science.gov (United States)

Angelova, T.; Cros, A.; Ivanov, Ts.; Donchev, V.; Cantarero, A.; Shtinkov, N.; Deneke, Ch.; Schmidt, O. G.

2011-12-01

In this work we get insight into the multilayer structure of rolled-up microtube radial superlattices (RSLs) by the study of the optical and folded acoustic phonon modes of individual microtubes. Raman results show shifts of the InGaAs and GaAs related longitudinal optical modes that can be related to the strain state of the tubes. The folding of the acoustic modes has been related with the periodicity of the artificial superlattice formed by the multiple turns of the heterostructures. Information on the electronic structure and optical transitions of RSLs has been obtained by surface photovoltage spectroscopy. Room temperature spectra reveal several electronic transitions with energies below 1.3 eV. These transitions have been identified as originating from defect levels at the interfaces, as well as from the RSLs and the In0.215Ga0.785As/GaAs quantum well in the unfolded regions of the sample.

Investigation of InAs/GaSb-based superlattices by diffraction methods

Energy Technology Data Exchange (ETDEWEB)

Ashuach, Y.; Kauffmann, Y.; Lakin, E. [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.i [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Grossman, S.; Klin, O.; Weiss, E. [SCD, SemiConductor Devices, P. O. Box 2250, Haifa 31021 (Israel)

2010-02-15

We use high-resolution X-ray diffraction and high-resolution transmission electron microscopy in order to study the strain state, atomic intermixing and layer thicknesses in the MBE-grown GaSb/InSb/InAs/InSb superlattices. Simple and fast metrology procedure is developed, which allows us to obtain the most important technological parameters, such as the thicknesses of the GaSb, InAs and ultra-thin InSb sub-layers, the superlattice period and the fraction of atomic substitutions in the InSb sub-layers.

Propagation and generation of Josephson radiation in superconductor/insulator superlattices

International Nuclear Information System (INIS)

Auvil, P.R.; Ketterson, J.B.

1987-01-01

The wave propagation and generation characteristics of a metal-insulator superlattice are calculated in a low-field Landau--Ginzburg model, including Josephson coupling through the insulating layers. It is shown that a significant increase in the phase velocity of the electromagnetic waves propagating in the superlattice occurs when the thickness of the superconducting layers becomes much less than the London penetration depth, suggesting that increased output of Josephson radiation may be achieved from such structures. Wave generation via the ac Josephson effect (in the presence of applied dc electric and magnetic fields) is studied for both parallel and series driven multilayer structures

Propagation of Nd magnetic phases in Nd/Sm(001) superlattices

International Nuclear Information System (INIS)

Soriano, S; Dufour, C; Dumesnil, K; Stunault, A

2006-01-01

The propagation of Nd long range magnetic order in the hexagonal and cubic sublattices has been investigated in double hexagonal compact Nd/Sm(001) superlattices by resonant x-ray magnetic scattering at the Nd L 2 absorption edge. For a superlattice with 3.7 nm thick Sm layers, the magnetic structure of the hexagonal sublattice propagates coherently through several bilayers, whereas the order in the cubic sublattice remains confined to single Nd blocks. For a superlattice with 1.4 nm thick Sm layers, the magnetic structures of both sublattices appear to propagate coherently through the superlattice. This is the first observation (i) of the long range coherent propagation of Nd order on the cubic sites between Nd blocks and (ii) of a different thickness dependence of the propagation of the Nd magnetic phases associated with the hexagonal and cubic sublattices. The propagation of the Nd magnetic order through Sm is interpreted in terms of generalized susceptibility of the Nd conduction electrons

Ordered quantum-ring chains grown on a quantum-dot superlattice template

International Nuclear Information System (INIS)

Wu Jiang; Wang, Zhiming M.; Holmes, Kyland; Marega, Euclydes; Mazur, Yuriy I.; Salamo, Gregory J.

2012-01-01

One-dimensional ordered quantum-ring chains are fabricated on a quantum-dot superlattice template by molecular beam epitaxy. The quantum-dot superlattice template is prepared by stacking multiple quantum-dot layers and quantum-ring chains are formed by partially capping quantum dots. Partially capping InAs quantum dots with a thin layer of GaAs introduces a morphological change from quantum dots to quantum rings. The lateral ordering is introduced by engineering the strain field of a multi-layer InGaAs quantum-dot superlattice.

Semiconductors: A 21st Century Social Studies Topic.

Science.gov (United States)

Sunal, Cynthia

2000-01-01

Addresses the reasons for exploring semiconductor technology and organic semiconductors in schools for either middle school or secondary students in an interdisciplinary social studies and science environment. Provides background information on transistors and semiconductors. Offers three social studies lessons and related science lessons if an…

InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure

Science.gov (United States)

Kanouni, F.; Brezini, A.; Djenane, M.; Zou, Q.

2018-03-01

We have theoretically investigated the electron energy spectra and surface states energy in the three dimensionally ordered quantum dot superlattices (QDSLs) made of InN and GaN semiconductors. The QDSL is assumed in this model to be a matrix of GaN containing cubic dots of InN of the same size and uniformly distributed. For the miniband’s structure calculation, the resolution of the effective mass Schrödinger equation is done by decoupling it in the three directions within the framework of Kronig-Penney model. We found that the electrons minibands in infinite ODSLs are clearly different from those in the conventional quantum-well superlattices. The electrons localization and charge-carrier states are very dependent on the quasicrystallographic directions, the size and the shape of the dots which play a role of the artificial atoms in such QD supracrystal. The energy spectrum of the electron states localized at the surface of InN/GaN QDSL is represented by Kronig-Penney like-model, calculated via direct matching procedure. The calculation results show that the substrate breaks symmetrical shape of QDSL on which some localized electronic surface states can be produced in minigap regions. Furthermore, we have noticed that the surface states degeneracy is achieved in like very thin bands located in the minigaps, identified by different quantum numbers nx, ny, nz. Moreover, the surface energy bands split due to the reduction of the symmetry of the QDSL in z-direction.

Magnetic rare earth superlattices

DEFF Research Database (Denmark)

Majkrzak, C.F.; Kwo, J.; Hong, M.

1991-01-01

Advances in molecular beam epitaxy deposition techniques have recently made it possible to grow, an atomic plane at a time, single crystalline superlattices composed of alternating layers of a magnetic rare earth, such as Gd, Dy, Ho, or Er, and metallic Y, which has an identical chemical structure...

Photoacoustic transformation of Bessel light beams in magnetoactive superlattices

Energy Technology Data Exchange (ETDEWEB)

Mityurich, G. S., E-mail: George-mityurich@mail.ru [Belarusian Trade and Economics University of Consumer Cooperatives (Belarus); Chernenok, E. V.; Sviridova, V. V.; Serdyukov, A. N. [Gomel State University (Belarus)

2015-03-15

Photoacoustic transformation of the TE mode of a Bessel light beam (BLB) has been studied for piezoelectric detection in short-period superlattices formed by magnetoactive crystals of bismuth germanate (Bi{sub 12}GeO{sub 20}) and bismuth silicate (Bi{sub 12}SiO{sub 20}) types. It is shown that the resulting signal amplitude can be controlled using optical schemes of BLB formation with a tunable cone angle. A resonant increase in the signal amplitude has been found in the megahertz range of modulation frequencies and its dependences on the BLB modulation frequency, geometric sizes of the two-layer structure and piezoelectric transducer, radial coordinate of the polarization BLB mode, and dissipative superlattice parameters are analyzed.

X-ray diffraction of multilayers and superlattices

International Nuclear Information System (INIS)

Bartels, W.J.; Hornstra, J.; Lobeek, D.J.W.

1986-01-01

Recursion formulae for calculating the reflected amplitude ratio of multilayers and superlattices have been derived from the Takagi-Taupin differential equations, which describe the dynamical diffraction of X-rays in deformed crystals. Calculated rocking curves of complicated layered structures, such as non-ideal superlattices on perfect crystals, are shown to be in good agreement with observed diffraction profiles. The kinematical theory can save computing time only in the case of an ideal superlattice, for which a geometric series can be used, but the reflections must be below 10% so that multiple reflections can be neglected. For a perfect crystal of arbitrary thickness the absorption at the center of the dynamical reflection is found to be proportional to the square root of the reflectivity. Sputter-deposited periodic multilayers of tungsten and carbon can be considered as an artificial crystal, for which dynamical X-ray diffraction calculations give results very similar to those of a macroscopic optical description in terms of the complex index of refraction and Fresnel reflection coefficients. (orig.)

Magnetic structures of holmium-lutetium alloys and superlattices

DEFF Research Database (Denmark)

Swaddling, P.P.; Cowley, R.A.; Ward, R.C.C.

1996-01-01

Alloys and superlattices of Ho and Lu have been grown using molecular beam epitaxy and their magnetic structures determined using neutron-scattering techniques. The 4f moments in the alloys form a helix at all compositions with the moments aligned in the basal plane perpendicular to the wave vector...... of the helix remaining coherent through the nonmagnetic Lu blocks. The neutron scattering from the superlattices is consistent with a model in which there are different phase advances of the helix turn angle through the Ho and Lu blocks, but with a localized moment on the Ho sites only. A comparison...... of Ho and Lu. At low temperatures, for superlattices with fewer than approximately twenty atomic planes of Ho, the Ho moments within a block undergo a phase transition from helical to ferromagnetic order, with the coupling between successive blocks dependent on the thickness of the Lu spacer....

COMPORTAMENTO A CORROSIONE E TRIBOCORROSIONE DI RIVESTIMENTI CERMET E CERMET/ SUPERLATTICE

OpenAIRE

Monticelli, C.; Zucchi, F.

2009-01-01

È stato studiato il comportamento a corrosione e tribocorrosione di riporti cermet e cermet/superlattice,applicati su campioni di acciaio. I riporti cermet consistono in riporti termici HVOF a spessore,di tipo WC-12Co o Cr3C2-37WC-18Me. I doppi riporti cermet/superlattice sono ottenuti sovrapponendoai depositi cermet citati un superlattice a base di nitruri, in cui si alternano strati di CrN e di NbN. Unasoluzione al 3.5 % di NaCl costituisce l’ambiente aggressivo. Le condizioni di tribocorro...

Transmission of electrons with flat passbands in finite superlattices

International Nuclear Information System (INIS)

Barajas-Aguilar, A H; Rodríguez-Magdaleno, K A; Martínez-Orozco, J C; Enciso-Muñoz, A; Contreras-Solorio, D A

2013-01-01

Using the transfer matrix method and the Ben Daniel-Duke equation for variable mass electrons propagation, we calculate the transmittance for symmetric finite superlattices where the width and the height of the potential barriers follow a linear dependence. The width and height of the barriers decreases from the center to the ends of the superlattice. The transmittance presents intervals of stopbands and quite flat passbands.

Tunable porous nanoallotropes prepared by post-assembly etching of binary nanoparticle superlattices

Science.gov (United States)

Udayabhaskararao, Thumu; Altantzis, Thomas; Houben, Lothar; Coronado-Puchau, Marc; Langer, Judith; Popovitz-Biro, Ronit; Liz-Marzán, Luis M.; Vuković, Lela; Král, Petr; Bals, Sara; Klajn, Rafal

2017-10-01

Self-assembly of inorganic nanoparticles has been used to prepare hundreds of different colloidal crystals, but almost invariably with the restriction that the particles must be densely packed. Here, we show that non-close-packed nanoparticle arrays can be fabricated through the selective removal of one of two components comprising binary nanoparticle superlattices. First, a variety of binary nanoparticle superlattices were prepared at the liquid-air interface, including several arrangements that were previously unknown. Molecular dynamics simulations revealed the particular role of the liquid in templating the formation of superlattices not achievable through self-assembly in bulk solution. Second, upon stabilization, all of these binary superlattices could be transformed into distinct “nanoallotropes”—nanoporous materials having the same chemical composition but differing in their nanoscale architectures.

Superlattices of platinum and palladium nanoparticles

Energy Technology Data Exchange (ETDEWEB)

MARTIN,JAMES E.; WILCOXON,JESS P.; ODINEK,JUDY G.; PROVENCIO,PAULA P.

2000-04-06

The authors have used a nonionic inverse micelle synthesis technique to form nanoclusters of platinum and palladium. These nanoclusters can be rendered hydrophobic or hydrophilic by the appropriate choice of capping ligand. Unlike Au nanoclusters, Pt nanoclusters show great stability with thiol ligands in aqueous media. Alkane thiols, with alkane chains ranging from C{sub 6} to C{sub 18} were used as hydrophobic ligands, and with some of these they were able to form 2-D and/or 3-D superlattices of Pt nanoclusters as small as 2.7 nm in diameter. Image processing techniques were developed to reliably extract from transmission electron micrographs (TEMs) the particle size distribution, and information about the superlattice domains and their boundaries. The latter permits one to compute the intradomain vector pair correlation function of the particle centers, from which they can accurately determine the lattice spacing and the coherent domain size. From these data the gap between the particles in the coherent domains can be determined as a function of the thiol chain length. It is found that as the thiol chain length increases, the gaps between particles within superlattice domains increases, but more slowly than one might expect, possibly indicating thiol chain interdigitation.

Dielectric enhancement of BaTiO3/SrTiO3 superlattices with embedded Ni nanocrystals

International Nuclear Information System (INIS)

Xiong Zhengwei; Sun Weiguo; Wang Xuemin; Jiang Fan; Wu Weidong

2012-01-01

Highlights: ► The BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs were successfully fabricated by L-MBE. ► The influence with the various concentrations of Ni nanocrystals embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. ► The BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss compared with the pure BaTiO 3 /SrTiO 3 superlattices. ► The dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory. - Abstract: The self-organized Ni nanocrystals (NCs) were embedded in BaTiO 3 /SrTiO 3 superlattices using laser molecular beam epitaxy (L-MBE). The stress of the composite films was increased with the increasing concentration of embedded Ni NCs, as investigation in stress calculation. The influence with the various concentrations of Ni NCs embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. The internal stress of the films was too strong to epitaxial growth of BaTiO 3 /SrTiO 3 superlattices. Compared with the pure BaTiO 3 /SrTiO 3 superlattices, the BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss. Furthermore, the dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory.

Theoretical Study of the Transverse Dielectric Constant of Superlattices and Their Alloys. Ph.D Thesis

Science.gov (United States)

Kahen, K. B.

1986-01-01

The optical properties of III to V binary and ternary compounds and GaAs-Al(x)Ga(1-x)As superlattices are determined by calculating the real and imaginary parts of the transverse dielectric constant. Emphasis is given to determining the influence of different material and superlattice parameters on the values of the index of refraction and absorption coefficient. In order to calculate the optical properties of a material, it is necessary to compute its electronic band structure. This was accomplished by introducing a partition band structure approach based on a combination of the vector k x vector p and nonlocal pseudopotential techniques. The advantages of this approach are that it is accurate, computationally fast, analytical, and flexible. These last two properties enable incorporation of additional effects into the model, such as disorder scattering, which occurs for alloy materials and excitons. Furthermore, the model is easily extended to more complex structures, for example multiple quantum wells and superlattices. The results for the transverse dielectric constant and absorption coefficient of bulk III to V compounds compare well with other one-electron band structure models and the calculations show that for small frequencies, the index of refraction is determined mainly by the contibution of the outer regions of the Brillouin zone.

Dynamical x-ray diffraction studies of interfacial strain in superlattices grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Vandenberg, J.M.; Chu, S.N.G.; Hamm, R.A.; Panish, M.B.; Ritter, D.; Mancrander, A.T.

1992-01-01

This paper reports on dynamical X-ray diffraction studies that have been carried out for lattice-matched InGaAs/InP superlattices grown by modified molecular beam epitaxy (MBE) techniques. The (400) X-ray satellite pattern, which is predominantly affected by the strain modulation, was analyzed. The strain and thickness of the actual layers including the presence of strained interfacial regions were determined

ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

International Nuclear Information System (INIS)

Tynell, Tommi; Karppinen, Maarit

2014-01-01

Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline

ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi

2014-01-31

Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline.

Effects of anharmonic strain on the phase stability of epitaxial films and superlattices: Applications to noble metals

International Nuclear Information System (INIS)

Ozolins, V.; Wolverton, C.; Zunger, A.

1998-01-01

Epitaxial strain energies of epitaxial films and bulk superlattices are studied via first-principles total-energy calculations using the local-density approximation. Anharmonic effects due to large lattice mismatch, beyond the reach of the harmonic elasticity theory, are found to be very important in Cu/Au (lattice mismatch 12%), Cu/Ag (12%), and Ni/Au (15%). We find that left-angle 001 right-angle is the elastically soft direction for biaxial expansion of Cu and Ni, but it is left-angle 201 right-angle for large biaxial compression of Cu, Ag, and Au. The stability of superlattices is discussed in terms of the coherency strain and interfacial energies. We find that in phase separating systems such as Cu-Ag the superlattice formation energies decrease with superlattice period, and the interfacial energy is positive. Superlattices are formed easiest on (001) and hardest on (111) substrates. For ordering systems, such as Cu-Au and Ag-Au, the formation energy of superlattices increases with period, and interfacial energies are negative. These superlattices are formed easiest on (001) or (110) and hardest on (111) substrates. For Ni-Au we find a hybrid behavior: superlattices along left-angle 111 right-angle and left-angle 001 right-angle behave like phase separating systems, while for left-angle 110 right-angle they behave like ordering systems. Finally, recent experimental results on epitaxial stabilization of disordered Ni-Au and Cu-Ag alloys, immiscible in the bulk form, are explained in terms of destabilization of the phase separated state due to lattice mismatch between the substrate and constituents. copyright 1998 The American Physical Society

Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

Energy Technology Data Exchange (ETDEWEB)

Li, Yuan, E-mail: liyuan12@semi.ac.cn; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai, E-mail: yhchen@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China); Niu, Zhichuan; Xiang, Wei; Hao, Hongyue [The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)

2015-05-11

In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed.

Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

International Nuclear Information System (INIS)

Li, Yuan; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai; Niu, Zhichuan; Xiang, Wei; Hao, Hongyue

2015-01-01

In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed

Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland)

2014-01-15

A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

Design of band pass filter in a modulated magnetic graphene superlattice

International Nuclear Information System (INIS)

Lu, Wei-Tao; Li, Wen

2015-01-01

Electronic transport of graphene through a modulated magnetic superlattice where the barrier heights present Gaussian profile is studied. It is found that the incident electron could be completely transmitted in the miniband regions and be completely reflected in the bandgap regions. The results suggest an application of the structure as an effectively band pass filter, which can be controlled by the structural parameters. It is concluded that the positions of miniband and bandgap are robust to the Gaussian variation of barrier heights. The effect of this modulated magnetic superlattice is also available for the conventional electrons described by Schrödinger equation

Development of high-capacity nickel-metal hydride batteries using superlattice hydrogen-absorbing alloys

International Nuclear Information System (INIS)

Yasuoka, Shigekazu; Magari, Yoshifumi; Murata, Tetsuyuki; Tanaka, Tadayoshi; Ishida, Jun; Nakamura, Hiroshi; Nohma, Toshiyuki; Kihara, Masaru; Baba, Yoshitaka; Teraoka, Hirohito

2006-01-01

New R-Mg-Ni (R: rare earths) superlattice alloys with higher-capacity and higher-durability than the conventional Mm-Ni alloys with CaCu 5 structure have been developed. The oxidation resistibility of the superlattice alloys has been improved by optimizing the alloy composition by such as substituting aluminum for nickel and optimizing the magnesium content in order to prolong the battery life. High-capacity nickel-metal hydride batteries for the retail market, the Ni-MH2500/900 series (AA size type 2500mAh, AAA size type 900mAh), have been developed and commercialized by using an improved superlattice alloy for negative electrode material. alized by using an improved superlattice alloy for negative electrode material. (author)

InGaNAs/GaAs multi-quantum wells and superlattices solar cells

International Nuclear Information System (INIS)

Courel Piedrahita, Maykel; Rimada Herrera, Julio Cesar; Hernandez Garcia, Luis

2011-01-01

A theoretical study of the GaAs/InGaNAs solar cells based on a multi-quantum wells (MQWSC) and superlattices (SLSC) configuration is presented for the first time. The conversion efficiency as a function of wells width and depth is modeled. The photon absorption increases with the well levels incorporation and therefore the photocurrent as well. It is shown that the MQWSC efficiency overcomes the solar cells without wells about 25%. A study of the SLSC viability is also presented. The conditions for resonant tunneling are established by the matrix transfer method for a superlattice with variable quantum wells width. The effective density of states and the absorption coefficients for SL structure are calculated in order to determinate the JV characteristic. The influence of the superlattice or cluster width in the cell efficiency is researched showing a better performance when width and the number of cluster are increased. The SLSC efficiency is compared with the optimum efficiency obtained for the MQWSC showing that it is reached an amazing increment of 27%. (author)

Analysis of polariton dispersion in metal nanocomposite based novel superlattice system

Science.gov (United States)

DoniPon, V.; Joseph Wilson, K. S.; Malarkodi, A.

2018-06-01

The influence of metal nanoparticles in tuning the polaritonic gap in a novel piezoelectric superlattice is studied. Dielectric function of the metal nanoparticles is analyzed using Kawabata-Kubo effect and Drude's theory. The effective dielectric function of the nanocomposite system is studied using Maxwell Garnett approximation. Nanocomposite based LiTaO3 novel superlattice is formed by arranging the nanocomposite systems in such a way that their orientations are in the opposite direction. Hence there are two additional modes of propagation. The top most modes reflect the metal behavior of the nanoparticles. It is found that these modes of propagation vary with the filling factor. These additional modes of propagations can be exploited in the field of communication.

Planar channeling in superlattices: Theory

International Nuclear Information System (INIS)

Ellison, J.A.; Picraux, S.T.; Allen, W.R.; Chu, W.K.

1988-01-01

The well-known continuum model theory for planar channeled energetic particles in perfect crystals is extended to layered crystalline structures and applied to superlattices. In a strained-layer structure, the planar channels with normals which are not perpendicular to the growth direction change their direction at each interface, and this dramatically influences the channeling behavior. The governing equation of motion for a planar channeled ion in a strained-layer superlattice with equal layer thicknesses is a one degree of freedom nonlinear oscillator which is periodically forced with a sequence of δ functions. These δ functions, which are of equal spacing and amplitude with alternating sign, represent the tilts at each of the interfaces. Thus upon matching an effective channeled particle wavelength, corresponding to a natural period of the nonlinear oscillator, to the period of the strained-layer superlattice, corresponding to the periodic forcing, strong resonance effects are expected. The condition of one effective wavelength per period corresponds to a rapid dechanneling at a well-defined depth (catastrophic dechanneling), whereas two wavelengths per period corresponds to no enhanced dechanneling after the first one or two layers (resonance channeling). A phase plane analysis is used to characterize the channeled particle motion. Detailed calculations using the Moliere continuum potential are compared with our previously described modified harmonic model, and new results are presented for the phase plane evolution, as well as the dechanneling as a function of depth, incident angle, energy, and layer thickness. General scaling laws are developed and nearly universal curves are obtained for the dechanneling versus depth under catastrophic dechanneling

Interface properties of superlattices with artificially broken symmetry

International Nuclear Information System (INIS)

Lottermoser, Th.; Yamada, H.; Matsuno, J.; Arima, T.; Kawasaki, M.; Tokura, Y.

2007-01-01

We have used superlattices made of thin layers of transition metal oxides to design the so-called multiferroics, i.e. materials possessing simultaneously an electric polarization and a magnetic ordering. The polarization originates from the asymmetric stacking order accompanied by charge transfer effects, while the latter one also influences the magnetic properties of the interfaces. Due to the breaking of space and time-reversal symmetry by multiple ordering mechanism magnetic second harmonic generation is proven to be an ideal method to investigate the electric and magnetic properties of the superlattices

Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain

Science.gov (United States)

Xie, Saien; Tu, Lijie; Han, Yimo; Huang, Lujie; Kang, Kibum; Lao, Ka Un; Poddar, Preeti; Park, Chibeom; Muller, David A.; DiStasio, Robert A.; Park, Jiwoong

2018-03-01

Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically thin superlattices in which different transition metal dichalcogenide monolayers—despite large lattice mismatches—are repeated and laterally integrated without dislocations within the monolayer plane. Grown by an omnidirectional epitaxy, these superlattices display fully matched lattice constants across heterointerfaces while maintaining an isotropic lattice structure and triangular symmetry. This strong epitaxial strain is precisely engineered via the nanoscale supercell dimensions, thereby enabling broad tuning of the optical properties and producing photoluminescence peak shifts as large as 250 millielectron volts. We present theoretical models to explain this coherent growth and the energetic interplay governing the ripple formation in these strained monolayers. Such coherent superlattices provide building blocks with targeted functionalities at the atomically thin limit.

Kinetic Monte Carlo simulation of phase-precipitation versus instability behavior in short period FeCr superlattices

Energy Technology Data Exchange (ETDEWEB)

Rodríguez-Martínez, F.J. [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Castejón-Mochón, J.F., E-mail: jfcastejon@ucam.edu [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Castrillo, P.; Berenguer-Vidal, R. [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Dopico, I.; Martin-Bragado, I. [IMDEA Materials Institute, Eric Kandel 2, 28906 Getafe (Madrid) (Spain)

2017-02-15

The structural evolution of FeCr superlattices has been studied using a quasi-atomistic Object Kinetic Monte Carlo model. Superlattices with different spatial periods have been simulated for anneal durations from few hours to several months at 500 °C. Relatively-long period superlattices stabilize into Fe-rich and Cr-rich layers with compositions close to those of bulk α and α′ phases. In contrast, superlattices with very short periods (4, 5, 6 nm) are observed to undergo instability and, for long annealing times, evolve into three-dimensionally decomposed regions, in qualitative agreement to recent experimental observations. The instability onset is delayed as the spatial period increases, and it occurs via interface roughness. This evolution can be explained as a minimization of the free-energy associated to the α/α′ interfaces. A comprehensive description of the evolution dynamics of FeCr-based structures is obtained with our model.

Inclined inheritance of interface roughness in semiconductor superlattices as characterized by x-ray reciprocal space mapping

International Nuclear Information System (INIS)

Schmidbauer, M.; Opitz, R.; Wiebach, Th.; Koehler, R.

2001-01-01

The inclined inheritance of interface roughness is investigated for an AlASGaAs superlattice grown by molecular beam epitaxy on a vicinal (001) GaAs substrate. As a consequence of vertical correlation of the roughness of subsequent interfaces the diffusely scattered x-ray intensity is bunched into resonant diffuse scattering (RDS) sheets in reciprocal space. Inclined inheritance leads to corresponding shearing of the RDS sheets. A simple model for the evaluation of inclined roughness inheritance in three dimensions is presented, where the sheared RDS sheets are modeled by anisotropic sheared ellipsoids. From measurements at different azimuthal sample orientations the two angles characterizing the inclined inheritance of interface roughness can be determined accurately. At the present sample the inheritance of interface roughness approximately follows the direction of step flow during growth. The results show that a three-dimensional analysis of diffuse scattering is necessary for a correct evaluation and interpretation

Interface-Induced Nucleation, Orientational Alignment and Symmetry Transformations in Nanocube Superlattices

KAUST Repository

Choi, Joshua J.

2012-09-12

The self-assembly of colloidal nanocrystals into ordered superstructures depends critically on the shape of the nanocrystal building blocks. We investigated the self-assembly of cubic PbSe nanocrystals from colloidal suspensions in real-time using in situ synchrotron-based X-ray scattering. We combined small-angle and wide-angle scattering to investigate the translational ordering of nanocrystals and their orientational ordering in the lattice sites, respectively. We found that cubic PbSe nanocrystals assembled into a face-up (i.e., 〈100〉 normal to the interface) configuration at the liquid/substrate interface whereas nanocubes at the liquid/air interface assume a corner-up (i.e., 〈111〉 normal to the interface) configuration. The latter nanocrystal superlattice displays polymorphism as a function inter-NC separation distance. We explain the observed superlattice structure polymorphs in terms of the interactions directing the self-assembly. Insights into the directed self-assembly of superlattices gained from this study have important implication on the future development of nanocrystals as building blocks in artificial solids. © 2012 American Chemical Society.

Manganites in Perovskite Superlattices: Structural and Electronic Properties

KAUST Repository

Jilili, Jiwuer

2016-07-13

Perovskite oxides have the general chemical formula ABO3, where A is a rare-earth or alkali-metal cation and B is a transition metal cation. Perovskite oxides can be formed with a variety of constituent elements and exhibit a wide range of properties ranging from insulators, metals to even superconductors. With the development of growth and characterization techniques, more information on their physical and chemical properties has been revealed, which diversified their technological applications. Perovskite manganites are widely investigated compounds due to the discovery of the colossal magnetoresistance effect in 1994. They have a broad range of structural, electronic, magnetic properties and potential device applications in sensors and spintronics. There is not only the technological importance but also the need to understand the fundamental mechanisms of the unusual magnetic and transport properties that drive enormous attention. Manganites combined with other perovskite oxides are gaining interest due to novel properties especially at the interface, such as interfacial ferromagnetism, exchange bias, interfacial conductivity. Doped manganites exhibit diverse electrical properties as compared to the parent compounds. For instance, hole doped La0.7Sr0.3MnO3 is a ferromagnetic metal, whereas LaMnO3 is an antiferromagnetic insulator. Since manganites are strongly correlated systems, heterojunctions composed of manganites and other perovskite oxides are sunject to complex coupling of the spin, orbit, charge, and lattice degrees of freedom and exhibit unique electronic, magnetic, and transport properties. Electronic reconstructions, O defects, doping, intersite disorder, magnetic proximity, magnetic exchange, and polar catastrophe are some effects to explain these interfacial phenomena. In our work we use first-principles calculations to study the structural, electronic, and magnetic properties of manganite based superlattices. Firstly, we investigate the electronic

Strain and Defect Engineering for Tailored Electrical Properties in Perovskite Oxide Thin Films and Superlattices

Science.gov (United States)

Hsing, Greg Hsiang-Chun

Functional complex-oxides display a wide spectrum of physical properties, including ferromagnetism, piezoelectricity, ferroelectricity, photocatalytic and metal-insulating transition (MIT) behavior. Within this family, oxides with a perovskite structure have been widely studied, especially in the form of thin films and superlattices (heterostructures), which are strategically and industrially important because they offer a wide range of opportunities for electronic, piezoelectric and sensor applications. The first part of my thesis focuses on understanding and tuning of the built-in electric field found in PbTiO3/SrTiO3 (PTO/STO) ferroelectric superlattices and other ferroelectric films. The artificial layering in ferroelectric superlattices is a potential source of polarization asymmetry, where one polarization state is preferred over another. One manifestation of this asymmetry is a built-in electric field associated with shifted polarization hysteresis. Using off-axis RF-magnetron sputtering, we prepared several compositions of PTO/STO superlattice thin films; and for comparison PbTiO3/SrRuO 3 (PTO/SRO) superlattices, which have an additional intrinsic compositional asymmetry at the interface. Both theoretical modeling and experiments indicate that the layer-by-layer superlattice structure aligns the Pb-O vacancy defect dipoles in the c direction which contributes significantly to the built-in electric field; however the preferred polarization direction is different between the PTO/STO and PTO/SRO interface. By designing a hybrid superlattice that combines PTO/STO and PTO/SRO superlattices, we show the built-in electric field can be tuned to zero by changing the composition of the combo-superlattice. The second part of my thesis focuses on the epitaxial growth of SrCrO 3 (SCO) films. The inconsistent reports regarding its electrical and magnetic properties through the years stem from the compositionally and structurally ill-defined polycrystalline samples, but

Experimental investigations of superconductivity in quasi-two-dimensional epitaxial copper oxide superlattices and trilayers

International Nuclear Information System (INIS)

Lowndes, D.H.; Norton, D.P.

1993-01-01

Epitaxial trilayer and superlattice structures grown by pulsed laser ablation have been used to study the superconducting-to-normal transition of ultrathin (one and two c-axis unit cells) YBa 2 Cu 3 O 7-x layers. The normalized flux-flow resistances for several epitaxial structures containing two-cell-thick YBa 2 Cu 3 O 7-x films collapse onto the ''universal'' curve of the Ginzburg-Landau Coulomb Gas (GLCG) model. Analysis of normalized resistance data for a series of superlattices containing one-cell-thick YBa 2 Cu 3 O 7-x layers also is consistent with the behavior expected for quasi-two-dimensional layers in a highly anisotropic, layered three-dimensional superconductor. Current-voltage measurements for one of the trilayer structures also are consistent with the normalized resistance data, and with the GLCG model. Scanning tunneling microscopy, transmission electron microscopy, and electrical transport studies show that growth-related steps in ultrathin YBa 2 Cu 3 O 7-x layers affect electrical continuity over macroscopic distances, acting as weak links. However , the perturbation of the superconducting order parameter can be minimized by utilizing hole-doped buffer and cap layers, on both sides of the YBa 2 Cu 3 O 7-x layer, in trilayers and superlattices. These results demonstrate the usefulness of epitaxial trilayer and superlattice structures as tools for systematic, fundamental studies of high-temperature superconductivity

Molecular dynamics simulation of thermal conductivities of superlattice nanowires

Institute of Scientific and Technical Information of China (English)

YANG; Juekuan(杨决宽); CHEN; Yunfei(陈云飞); YAN; Jingping(颜景平)

2003-01-01

Nonequilibrium molecular dynamics simulations were carried out to investigate heat transfer in superlattice nanowires. Results show that for fixed period length superlattice nanowires, the ratio of the total interfacial thermal resistance to the total thermal resistance and the effective thermal conductivities are invariant with the changes in interface numbers. Increasing the period length leads to an increase in the average interfacial thermal resistance, which indicates that the interfacial thermal resistance depends not only on the materials that constitute the alternating segments of superlattice nanowires, but also on the lattice strain throughout the segments. The modification of the lattice structure due to the lattice mismatch should be taken into account in the acoustic mismatch model. Simulation results also demonstrated the size confinement effect on the thermal conductivities for low dimensional structures, i.e. the thermal conductivities and the interfacial thermal resistance increase as the nanowire cross-sectional area increases.

Interface disorder and transport properties in HTC/CMR superlattices

International Nuclear Information System (INIS)

Haberkorn, N.; Guimpel, J.; Sirena, M.; Steren, L.B.; Campillo, G.; Saldarriaga, W.; Gomez, M.E.

2004-01-01

The physical properties of superlattices are affected by interface disorder, like roughness and interdiffusion. X-ray diffraction allows its measurement through modeling and structure refinement. The high-T c RBa 2 Cu 3 O 7 (RBCO) and colossal magnetoresistance La x A 1-x MnO 3 (LAMO) perovskites are interesting superlattice partners given their similar lattice parameters and because the combination of magnetic and superconducting properties is interesting for both basic and applied research. We have investigated the structural and transport properties of YBCO/La 2/3 Ca 1/3 MnO 3 and GdBCO/La 0.6 Sr 0.04 MnO 3 superlattices grown by sputtering on (1 0 0)MgO. We find a roughness of 1 RBCO unit cell and a 30% interdiffusion in the same length from the interfaces for all samples. The superconducting behavior is found strongly dependent on the LAMO layer thickness

Surface magnetic phase transitions in Dy/Lu superlattices

International Nuclear Information System (INIS)

Goff, J.P.; Sarthour, R.S.; Micheletti, C.; Langridge, S.; Wilkins, C.J.T.; Ward, R.C.C.; Wells, M.R.

1999-01-01

Dy/Lu superlattices comprising ferromagnetic Dy blocks coupled antiferromagnetically across the Lu blocks may be modelled as a chain of XY spins with antiferromagnetic exchange and six-fold anisotropy. We have calculated the stable magnetic phases for the cases of large anisotropy and a field applied along an easy direction. For an infinite chain an intermediate phase (1, 5,...) is predicted, where the notation gives the angle between the moment and the applied field in units of π/3. Furthermore, the effects of surface reconstruction are determined for finite chains. A [Dy 20 Lu 12 ] 20 superlattice has been studied using bulk magnetization and polarized neutron reflectivity. The (1, 5,...) phase has been identified and the results provide direct evidence in support of the theoretical predictions. Dipolar forces are shown to account for the magnitude of the observed exchange coupling. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

Micro-hardness of InxGa(1-x)As superlattices. 'The Frogley conjecture'

International Nuclear Information System (INIS)

Jayaweera, N.B.

2000-01-01

Coherently strained In x Ga (1-x) As superlattices with alternating layers of opposite strain have been grown on InP substrates using Molecular Beam Epitaxy. Control of the layer strains is achieved by varying the indium composition and the structures are characterized using high-resolution x-ray diffraction. An optimized mathematical treatment of high-resolution x-ray data is presented for the determination of strain, composition and tilt of epitaxial strained layers. This analysis also provides guidance as to the best sets of reflections to measure. The method is applied explicitly to reciprocal space mapping, where errors are normally different in different reciprocal space directions, and compare results from rocking curve and reciprocal space analysis. Results are reported on the onset of plasticity in semiconductor strained layer superlattices, using nanoindentation with spherical indenters to observe the full stress-strain curve. The yield pressure is reduced by as much as a factor of two by the presence of the coherency strain. Varying the thicknesses and strains of the layers enables us to show that both sets of layers, compressive and tensile, reduce the yield pressure. This requires that a yield criterion must be satisfied over a finite volume, large enough to include layers of both signs. It is shown that the relevant yield criterion for our experimental data is the rate of change of elastic strain energy with plastic relaxation, integrated over a volume of the order of a micron across. In these studies, we have observed a large and reproducible size effect in the yield pressure and we show how the requirement of meeting a yield criterion over a finite volume naturally leads to the size effect. A theoretical analysis is given and quantative agreement with experiment is obtained. This is a crucial result for the understanding of nanoindentation and other systems in which stresses are highly inhomogeneous on a small scale. The result also has implications

Effect of anisotropy on the magnon energy gap in a two-layer ferromagnetic superlattice

International Nuclear Information System (INIS)

Qiu Rongke; Liang Jing; Li Qingfeng; Zhang Zhidong; Song Panpan; Hong Xiaomin

2009-01-01

The magnon energy bands or spectra in a two-layer ferromagnetic superlattice are studied. It is found that a modulated energy gap exists in the magnon energy band along K x direction perpendicular to the superlattice plane, which is different from the optical magnon gap at K x =0. The anisotropy, the spin quantum numbers and the interlayer exchange couplings all affect the magnon energy gap. If the anisotropy exists, there will be no acoustic energy branch in the system. There is a competition effect of the anisotropy and the spin quantum number on the magnon energy gap. The competition achieves a balance at the zero energy gap, at which the symmetry of the system is higher. The two energy spectra of the two-layer ferromagnetic superlattice are lowered with increasing temperature.

Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

Science.gov (United States)

Lau, Wayne Heung

-QD (QW) coupled system is inhibited and polariton bound states are formed within the polaritonic energy gap. A theory is also developed to study the polariton eigenenergy spectrum, polariton effective mass, and polariton spectral density of N identical semiconductor QDs (QWs) or a superlattice (SL) placed inside a III--V semiconductor. A polariton-impurity band lying within the polaritonic energy gap of the III--V semiconductor is predicted when the resonance energies of the QDs (QWs) lie inside the polaritonic energy gap. Hole-like polariton effective mass of the polariton-impurity band is predicted. It is also predicted that the spectral density of the polariton has a Lorentzian shape if the resonance energies of the QDs (QWs) lie outside the polaritonic gap.

Feshbach shape resonance for high Tc pairing in superlattices of quantum stripes and quantum wells

Directory of Open Access Journals (Sweden)

A Bianconi

2006-09-01

Full Text Available   The Feshbach shape resonances in the interband pairing in superconducting superlattices of quantum wells or quantum stripes is shown to provide the mechanism for high Tc superconductivity. This mechanism provides the Tc amplification driven by the architecture of material: superlattices of quantum wells (intercalated graphite or diborides and superlattices of quantum stripes (doped high Tc cuprate perovskites where the chemical potential is tuned to a Van Hove-Lifshitz singularity (vHs in the electronic energy spectrum of the superlattice associated with the change of the Fermi surface dimensionality in one of the subbands.

Interface disorder and transport properties in HTC/CMR superlattices

Energy Technology Data Exchange (ETDEWEB)

Haberkorn, N.; Guimpel, J.; Sirena, M.; Steren, L.B.; Campillo, G.; Saldarriaga, W.; Gomez, M.E

2004-08-01

The physical properties of superlattices are affected by interface disorder, like roughness and interdiffusion. X-ray diffraction allows its measurement through modeling and structure refinement. The high-T{sub c} RBa{sub 2}Cu{sub 3}O{sub 7} (RBCO) and colossal magnetoresistance La{sub x}A{sub 1-x}MnO{sub 3} (LAMO) perovskites are interesting superlattice partners given their similar lattice parameters and because the combination of magnetic and superconducting properties is interesting for both basic and applied research. We have investigated the structural and transport properties of YBCO/La{sub 2/3}Ca{sub 1/3}MnO{sub 3} and GdBCO/La{sub 0.6}Sr{sub 0.04}MnO{sub 3} superlattices grown by sputtering on (1 0 0)MgO. We find a roughness of 1 RBCO unit cell and a 30% interdiffusion in the same length from the interfaces for all samples. The superconducting behavior is found strongly dependent on the LAMO layer thickness.

Superlattice electroabsorption radiation detector

International Nuclear Information System (INIS)

Cooke, B.J.

1993-06-01

This paper provides a preliminary investigation of a new class of superlattice electroabsorption radiation detectors that employ direct optical modulation for high-speed, two-dimensional (2-D), high-resolution imaging. Applications for the detector include nuclear radiation measurements, tactical guidance and detection (laser radar), inertial fusion plasma studies, and satellite-based sensors. Initial calculations discussed in this paper indicate that a 1.5-μm (GaAlAs) multi-quantum-well (MQW) Fabry-Perot detector can respond directly to radiation of energies 1 eV to 10 KeV, and indirectly (with scattering targets) up through gamma, with 2-D sample rates on the order of 20 ps

Epitaxial (100)-oriented Mo/V superlattice grown on MgO(100) by dcMS and HiPIMS

International Nuclear Information System (INIS)

Shayestehaminzadeh, S.; Magnusson, R.L.; Gislason, H.P.; Olafsson, S.

2013-01-01

Epitaxial (100)-oriented Mo/V superlattices have been grown by High Power Impulse Magnetron Sputtering (HiPIMS) and dc Magnetron Sputtering (dcMS) on single-crystalline MgO(100) substrates at growth temperatures ranging from 30 °C to 600 °C. Superlattice bilayer period of Mo/V around 12/12 monolayers and 15 repeat periods was studied. This study aims to investigate the effect of the HiPIMS process on reducing the growth temperature of Mo/V superlattices using the high energy ionized Mo, V species in the HiPIMS plasma. In one case, the Mo layer was only grown with the HiPIMS process and V layer grown using the dcMS process while in another both layers were grown with the HiPIMS process. The as-deposited films were characterized by X-ray reflection and diffraction techniques. The dcMS process was found to give superior superlattice growth at high growth temperatures while a mixed Mo HiPIMS and V dcMS process gives better result at lower growth temperatures (300 °C). Room temperature growth reveals that neither the mixed Mo HiPIMS and V dcMS process nor the pure HiPIMS for both materials can produce better result compared to the pure dcMS process, which gives a relatively better result. - Highlights: • Epitaxial (100)-oriented Mo/V superlattices have been grown by HiPIMS and dcMS on MgO(100) for various temperatures. • The study was aimed to investigate the effect of ionized HiPIMS process onlowering the growth temperature. • The dcMS process was found to give superior superlattice growth at high growth temperature. • The mixed Mo HiPIMS and V dcMS process gives best result at lower growth temperatures

Spontaneous Superlattice Formation in Nanorods through PartialCation Exchange

Energy Technology Data Exchange (ETDEWEB)

Robinson, Richard D.; Sadtler, Bryce; Demchenko, Denis O.; Erdonmez, Can K.; Wang, Lin-Wang; Alivisatos, A. Paul

2007-03-14

Lattice mismatch strains are widely known to controlnanoscale pattern formation in heteroepitaxy, but such effects have notbeen exploited in colloidal nanocrystal growth. We demonstrate acolloidal route to synthesizing CdS-Ag2S nanorod superlattices throughpartial cation exchange. Strain induces the spontaneous formation ofperiodic structures. Ab initio calculations of the interfacial energy andmodeling of strain energies show that these forces drive theself-organization. The nanorod superlattices exhibit high stabilityagainst ripening and phase mixing. These materials are tunablenear-infrared emitters with potential applications as nanometer-scaleoptoelectronic devices.

Localization in superlattices with randomness in layer thickness

International Nuclear Information System (INIS)

Yuan Jian; Tsai Chienhua.

1987-08-01

The localization length for electrons in superlattices with randomness in layer thickness is studied in both the commensurate and the incommensurate cases. It is demonstrated that disorder limits the electrons to see only structures within the extent of their wave functions and to be hardly effected by any long range correlation. (author). 4 refs, 6 figs

Theory of transmission through disordered superlattices

DEFF Research Database (Denmark)

Wacker, Andreas; Hu, Ben Yu-Kuang

1999-01-01

We derive a theory for transmission through disordered finite superlattices in which the interface roughness scattering is treated by disorder averaging. This procedure permits efficient calculation of the transmission through samples with large cross sections. These calculations can be performed...

Engineering the oxygen coordination in digital superlattices

Science.gov (United States)

Cook, Seyoung; Andersen, Tassie K.; Hong, Hawoong; Rosenberg, Richard A.; Marks, Laurence D.; Fong, Dillon D.

2017-12-01

The oxygen sublattice in complex oxides is typically composed of corner-shared polyhedra, with transition metals at their centers. The electronic and chemical properties of the oxide depend on the type and geometric arrangement of these polyhedra, which can be controlled through epitaxial synthesis. Here, we use oxide molecular beam epitaxy to create SrCoOx:SrTiO3 superlattices with tunable oxygen coordination environments and sublattice geometries. Using synchrotron X-ray scattering in combination with soft X-ray spectroscopy, we find that the chemical state of Co can be varied with the polyhedral arrangement, with higher Co oxidation states increasing the valence band maximum. This work demonstrates a new strategy for engineering unique electronic structures in the transition metal oxides using short-period superlattices.

Electron drag by solitons in superlattices in an external magnetic field

International Nuclear Information System (INIS)

Vyazovskii, M.V.; Syrodoev, G.A.

1996-01-01

The soliton-electric effect accompanying the propagation of an electromagnetic soliton along an axis of a superlattice in an external magnetic field directed along the magnetic field of the soliton is studied. It is assumed that the duration γ-1 of the soliton pulse is much shorter than the free flight time of an electron. It is shown that in the absence of a constant magnetic field the drag current varies as sin(αsech2γt) (α is a constant determined by the parameters of the superlattice). In the presence of a constant magnetic field of intensity H0>>Hs, where Hs is the amplitude of the soliton field, the drag current oscillates

Formation mechanism of dot-line square superlattice pattern in dielectric barrier discharge

Energy Technology Data Exchange (ETDEWEB)

Liu, Weibo; Dong, Lifang, E-mail: donglfhbu@163.com, E-mail: pyy1616@163.com; Wang, Yongjie; Zhang, Xinpu [College of Physics Science and Technology, Hebei University, Baoding 071002 (China); College of Quality and Technical Supervision, Hebei University, Baoding 071002 (China); Pan, Yuyang, E-mail: donglfhbu@163.com, E-mail: pyy1616@163.com [College of Quality and Technical Supervision, Hebei University, Baoding 071002 (China)

2014-11-15

We investigate the formation mechanism of the dot-line square superlattice pattern (DLSSP) in dielectric barrier discharge. The spatio-temporal structure studied by using the intensified-charge coupled device camera shows that the DLSSP is an interleaving of three different subpatterns in one half voltage cycle. The dot square lattice discharges first and, then, the two kinds of line square lattices, which form square grid structures discharge twice. When the gas pressure is varied, DLSSP can transform from square superlattice pattern (SSP). The spectral line profile method is used to compare the electron densities, which represent the amounts of surface charges qualitatively. It is found that the amount of surface charges accumulated by the first discharge of DLSSP is less than that of SSP, leading to a bigger discharge area of the following discharge (lines of DLSSP instead of halos of SSP). The spatial distribution of the electric field of the surface charges is simulated to explain the formation of DLSSP. This paper may provide a deeper understanding for the formation mechanism of complex superlattice patterns in DBD.

Magneto-optical and cyclotron resonance studies of semiconductors and their nanostructures in pulsed high magnetic fields

International Nuclear Information System (INIS)

Miura, N.

1999-01-01

Full text: We present a review on the recent advances in physics of magneto-optical spectroscopy in the visible range and of infrared cyclotron resonance in pulsed high magnetic fields, which are produced by electromagnetic flux compression up to 500T, by the single-turn coil technique up to 200T or by conventional non-destructive long pulse magnets up to 50T. We discuss the recent results on the spectroscopy of low dimensional excitons in quantum wells and short period superlattices. In very high fields up to 500T, we observed anomalous field dependence of the exciton absorption lines and the 2D - 3D cross-over effects in GaAs/AlAs quantum wells. In GaP/AlP short period superlattices, it was found that the exciton photoluminescence intensity shows a dramatic decrease and the diamagnetic shift was negative when high magnetic fields were applied parallel to the growth direction. We observed also remarkable effects of uniaxial stress, which are ascribed to the cross-over effect between the two inequivalent valleys at the X points. Cyclotron resonance was measured by using various molecular gas lasers as radiation sources in the range 5 - 119 m . We present the results of cyclotron resonance in GaAs/AlGaAs quantum wells with tilted magnetic fields from the growth direction. It was found that the resonant field and the peak intensity show many different features depending on the extent of the Landau level-subband coupling and on the relation between the photon energy and the barrier height. A large hysteresis was observed between the rising and the falling sweeps of the magnetic field, when the cyclotron resonance energy became comparable with the subband spacing. In a diluted magnetic semiconductor CdFeS, we observed anomalous temperature dependence of the effective mass, suggestive of the magnetic polaron effect

Tuning the electrical and optical anisotropy of a monolayer black phosphorus magnetic superlattice

Science.gov (United States)

Li, X. J.; Yu, J. H.; Luo, K.; Wu, Z. H.; Yang, W.

2018-04-01

We investigate theoretically the effects of modulated periodic perpendicular magnetic fields on the electronic states and optical absorption spectrum in monolayer black phosphorus (phosphorene). We demonstrate that different phosphorene magnetic superlattice (PMS) orientations can give rise to distinct energy spectra, i.e. tuning the intrinsic electronic anisotropy. Rashba spin-orbit coupling (RSOC) develops a spin-splitting energy dispersion in this phosphorene magnetic superlattice. Anisotropic momentum-dependent carrier distributions along/perpendicular to the magnetic strips are demonstrated. The manipulations of these exotic electronic properties by tuning superlattice geometry, magnetic field and the RSOC term are addressed systematically. Accordingly, we find bright-to-dark transitions in the ground-state electron-hole pair transition rate spectrum and the PMS orientation-dependent anisotropic optical absorption spectrum. This feature offers us a practical way of modulating the electronic anisotropy in phosphorene by magnetic superlattice configurations and detecting this modulation capability by using an optical technique.

Electronic structure of a graphene superlattice with massive Dirac fermions

International Nuclear Information System (INIS)

Lima, Jonas R. F.

2015-01-01

We study the electronic and transport properties of a graphene-based superlattice theoretically by using an effective Dirac equation. The superlattice consists of a periodic potential applied on a single-layer graphene deposited on a substrate that opens an energy gap of 2Δ in its electronic structure. We find that extra Dirac points appear in the electronic band structure under certain conditions, so it is possible to close the gap between the conduction and valence minibands. We show that the energy gap E g can be tuned in the range 0 ≤ E g  ≤ 2Δ by changing the periodic potential. We analyze the low energy electronic structure around the contact points and find that the effective Fermi velocity in very anisotropic and depends on the energy gap. We show that the extra Dirac points obtained here behave differently compared to previously studied systems

Stability and dynamic of strain mediated adatom superlattices on Cu

Science.gov (United States)

Kappus, Wolfgang

2013-03-01

Substrate strain mediated adatom equilibrium density distributions have been calculated for Cu surfaces using two complementing methods. A hexagonal adatom superlattice in a coverage range up to 0.045 ML is derived for repulsive short range interactions. For zero short range interactions a hexagonal superstructure of adatom clusters is derived in a coverage range about 0.08 ML. Conditions for the stability of the superlattice against formation of dimers or clusters and degradation are analyzed using simple neighborhood models. Such models are also used to investigate the dynamic of adatoms within their superlattice neighborhood. Collective modes of adatom diffusion are proposed from the analogy with bulk lattice dynamics and methods for measurement are suggested. The recently put forward explanation of surface state mediated interactions for superstructures found in scanning tunneling microscopy experiments is put in question and strain mediated interactions are proposed as an alternative.

Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures

Energy Technology Data Exchange (ETDEWEB)

Wallbank, John R.; Chen, Xi; Fal' ko, Vladimir I. [Department of Physics, Lancaster University, Lancaster (United Kingdom); Mucha-Kruczynski, Marcin [Department of Physics, University of Bath (United Kingdom)

2015-06-15

Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moire superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Direct observation of two-step crystallization in nanoparticle superlattice formation

Energy Technology Data Exchange (ETDEWEB)

Park, Jungwon; Zheng, Haimei; Lee, Won Chul; Geissler, Phillip L.; Rabani, Eran; Alivisatos, A. Paul

2011-10-06

Direct imaging of nanoparticle solutions by liquid phase transmission electron microscopy has enabled unique in-situ studies of nanoparticle motion and growth. In the present work, we report on real-time formation of two-dimensional nanoparticle arrays in the very low diffusive limit, where nanoparticles are mainly driven by capillary forces and solvent fluctuations. We find that superlattice formation appears to be segregated into multiple regimes. Initially, the solvent front drags the nanoparticles, condensing them into an amorphous agglomerate. Subsequently, the nanoparticle crystallization into an array is driven by local fluctuations. Following the crystallization event, superlattice growth can also occur via the addition of individual nanoparticles drawn from outlying regions by different solvent fronts. The dragging mechanism is consistent with simulations based on a coarse-grained lattice gas model at the same limit.

Excitation on breather (bion) in superlattice

International Nuclear Information System (INIS)

Mensah, S.Y.; Allotey, F.K.A.; Mensah, N.G.

1999-09-01

Soliton breather excitation in superlattice has been studied in this paper. It is observed that under certain conditions, the vector potential equation for the electromagnetic wave propagating through the superlattice assumes the sine-Gordon(sG) equation. The solution of which does not give only a soliton but also a soliton breather. The binding energy of the breather is calculated to be E b = 16γ(1 - sin ν), γ = (1 - u 2 /v 0 2 ) -1/2 where u is the velocity of the breather and v 0 is the velocity of the electromagnetic wave in the absence of electrons. As can be seen, when ν → π/2 the binding energy tends to zero, hence, the breather disintegrates into a soliton and antisoliton. It was further observed that the binding energy decreases with an increase in Δ (the half miniband width) for a given value of d (SL period). Similarly it also decreases with increase in d for a given value of Δ. Comparing the breather's rest energy E b to that of soliton E s i.e E b = 2E s sin ν. We noted that the breather's rest energy is less than that required to excite a soliton. (author)

Energy band and transport properties in magnetic aperiodic graphene superlattices of Thue-Morse sequence

Science.gov (United States)

Yin, Yiheng; Niu, Yanxiong; Zhang, Huiyun; Zhang, Yuping; Liu, Haiyue

2016-02-01

Utilizing the transfer matrix method, we develop the electronic band structure and transport properties in Thue-Morse aperiodic graphene superlattices with magnetic barriers. It is found that the normal transmission is blocked and the position of the Dirac point can be shifted along the wavevector axis by changing the height and width ratio of magnetic barriers, which is intrinsic different from electronic field modulated superlattices. In addition, the angular threshold property of the transmission spectra and the oscillatory property of the conductance have been studied.

Characterization of band structure for transverse acoustic phonons in Fibonacci superlattices by a bandedge formalism

International Nuclear Information System (INIS)

Hsueh, W J; Chen, R F; Tang, K Y

2008-01-01

We present a divergence-free method to determine the characteristics of band structures and projected band structures of transverse acoustic phonons in Fibonacci superlattices. A set of bandedge equations is formulated to solve the band structures for the phonon instead of using the traditional dispersion relation. Numerical calculations show band structures calculated by the present method for the Fibonacci superlattice without numerical instability, which may occur in traditional methods. Based on the present formalism, the band structure for the acoustic phonons has been characterized by closure points and the projected bandgaps of the forbidden bands. The projected bandgaps are determined by the projected band structure, which is characterized by the cross points of the projected bandedges. We observed that the band structure and projected band structure and their characteristics were quite different for different generation orders and the basic layers for the Fibonacci superlattice. In this study, concise rules to determine these characteristics of the band structure and the projected band structure, including the number and the location of closure points of forbidden bands and those of projected bandgaps, in Fibonacci superlattices with arbitrary generation order and basic layers are proposed.

Strain-Mediated Inverse Photoresistivity in SrRuO3/La0.7Sr0.3MnO3Superlattices

KAUST Repository

Liu, Heng-Jui

2015-12-09

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. In the pursuit of novel functionalities by utilizing the lattice degree of freedom in complex oxide heterostructure, the control mechanism through direct strain manipulation across the interfaces is still under development, especially with various stimuli, such as electric field, magnetic field, light, etc. In this study, the superlattices consisting of colossal-magnetoresistive manganites La0.7Sr0.3MnO3 (LSMO) and photostrictive SrRuO3 (SRO) have been designed to investigate the light-dependent controllability of lattice order in the corresponding functionalities and rich interface physics. Two substrates, SrTiO3 (STO) and LaAlO3 (LAO), have been employed to provide the different strain environments to the superlattice system, in which the LSMO sublayers exhibit different orbital occupations. Subsequently, by introducing light, we can modulate the strain state and orbital preference of LSMO sublayers through light-induced expansion of SRO sublayers, leading to surprisingly opposite changes in photoresistivity. The observed photoresistivity decreases in the superlattice grown on STO substrate while increases in the superlattice grown on LAO substrate under light illumination. This work has presented a model system that demonstrates the manipulation of orbital-lattice coupling and the resultant functionalities in artificial oxide superlattices via light stimulus. A fascinating model system of optic-driven functionalities has been achieved by artificial superlattices consisting of manganite La0.7Sr0.3MnO3 (LSMO) and photostrictive SrRuO3 (SRO). With design of different initial strain and orbital states in superlattices, we can even control the photoresistivity of the superlattices in an opposite trend that cannot be achieved in pure single film.

The effect of interfacial charge transfer on ferromagnetism in perovskite oxide superlattices

Energy Technology Data Exchange (ETDEWEB)

Yang, F. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science; Gu, M. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science; Arenholz, E. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Browning, N. D. [Univ. of California, Davis, CA (United States). Department of Molecular and Cellular Biology; Takamura, Y. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science

2012-01-05

We investigate the structural, magnetic, and electrical properties of superlattices composed of the ferromagnetic/metal La_0.7Sr_0.3MnO₃ and non-magnetic/metal La_0.5Sr_0.5TiO₃ grown on (001)-oriented SrTiO₃ substrates. Using a combination of bulk magnetometry, soft x-ray magnetic spectroscopy, and scanning transmission electron microscopy, we demonstrate that robust ferromagnetic properties can be maintained in this superlattice system where charge transfer at the interfaces is minimized. Thus, ferromagnetism can be controlled effectively through the chemical identity and the thickness of the individual superlattice layers.

Shape-Anisotropy Driven Symmetry Transformations in Nanocrystal Superlattice Polymorphs

KAUST Repository

Bian, Kaifu; Choi, Joshua J.; Kaushik, Ananth; Clancy, Paulette; Smilgies, Detlef-M.; Hanrath, Tobias

2011-01-01

Despite intense research efforts by research groups worldwide, the potential of self-assembled nanocrystal superlattices (NCSLs) has not been realized due to an incomplete understanding of the fundamental molecular interactions governing the self-assembly process. Because NCSLs reside naturally at length-scales between atomic crystals and colloidal assemblies, synthetic control over the properties of constituent nanocrystal (NC) building blocks and their coupling in ordered assemblies is expected to yield a new class of materials with remarkable optical, electronic, and vibrational characteristics. Progress toward the formation of suitable test structures and subsequent development of NCSL-based technologies has been held back by the limited control over superlattice spacing and symmetry. Here we show that NCSL symmetry can be controlled by manipulating molecular interactions between ligands bound to the NC surface and the surrounding solvent. Specifically, we demonstrate solvent vapor-mediated NCSL symmetry transformations that are driven by the orientational ordering of NCs within the lattice. The assembly of various superlattice polymorphs, including face-centered cubic (fcc), body-centered cubic (bcc), and body-centered tetragonal (bct) structures, is studied in real time using in situ grazing incidence small-angle X-ray scattering (GISAXS) under controlled solvent vapor exposure. This approach provides quantitative insights into the molecular level physics that controls solvent-ligand interactions and assembly of NCSLs. Computer simulations based on all-atom molecular dynamics techniques confirm several key insights gained from experiment. © 2011 American Chemical Society.

Shape-Anisotropy Driven Symmetry Transformations in Nanocrystal Superlattice Polymorphs

KAUST Repository

Bian, Kaifu

2011-04-26

Despite intense research efforts by research groups worldwide, the potential of self-assembled nanocrystal superlattices (NCSLs) has not been realized due to an incomplete understanding of the fundamental molecular interactions governing the self-assembly process. Because NCSLs reside naturally at length-scales between atomic crystals and colloidal assemblies, synthetic control over the properties of constituent nanocrystal (NC) building blocks and their coupling in ordered assemblies is expected to yield a new class of materials with remarkable optical, electronic, and vibrational characteristics. Progress toward the formation of suitable test structures and subsequent development of NCSL-based technologies has been held back by the limited control over superlattice spacing and symmetry. Here we show that NCSL symmetry can be controlled by manipulating molecular interactions between ligands bound to the NC surface and the surrounding solvent. Specifically, we demonstrate solvent vapor-mediated NCSL symmetry transformations that are driven by the orientational ordering of NCs within the lattice. The assembly of various superlattice polymorphs, including face-centered cubic (fcc), body-centered cubic (bcc), and body-centered tetragonal (bct) structures, is studied in real time using in situ grazing incidence small-angle X-ray scattering (GISAXS) under controlled solvent vapor exposure. This approach provides quantitative insights into the molecular level physics that controls solvent-ligand interactions and assembly of NCSLs. Computer simulations based on all-atom molecular dynamics techniques confirm several key insights gained from experiment. © 2011 American Chemical Society.

Spin wave relaxation and magnetic properties in [M/Cu] super-lattices; M=Fe, Co and Ni

International Nuclear Information System (INIS)

Fahmi, A.; Qachaou, A.

2009-01-01

In this work, we study the elementary excitations and magnetic properties of the [M/Cu] super-lattices with: M=Fe, Co and Ni, represented by a Heisenberg ferromagnetic system with N atomic planes. The nearest neighbour (NN), next nearest neighbour (NNN) exchange, dipolar interactions and surface anisotropy effects are taken into account and the Hamiltonian is studied in the framework of the linear spin wave theory. In the presence of the exchange alone, the excitation spectrum E(k) and the magnetization z >/S analytical expressions are obtained using the Green's function formalism. The obtained relaxation time of the magnon populations is nearly the same in the Fe and Co-based super-lattices, while these magnetic excitations would last much longer in the Ni-based super lattice. A numerical study of the surface anisotropy and long-ranged dipolar interaction combined effects are also reported. The exchange integral values deduced from a comparison with experience for the three super-lattices are coherent.

Controlling Nanocrystal Superlattice Symmetry and Shape-Anisotropic Interactions through Variable Ligand Surface Coverage

KAUST Repository

Choi, Joshua J.; Bealing, Clive R.; Bian, Kaifu; Hughes, Kevin J.; Zhang, Wenyu; Smilgies, Detlef-M.; Hennig, Richard G.; Engstrom, James R.; Hanrath, Tobias

2011-01-01

The assembly of colloidal nanocrystals (NCs) into superstructures with long-range translational and orientational order is sensitive to the molecular interactions between ligands bound to the NC surface. We illustrate how ligand coverage on colloidal PbS NCs can be exploited as a tunable parameter to direct the self-assembly of superlattices with predefined symmetry. We show that PbS NCs with dense ligand coverage assemble into face-centered cubic (fcc) superlattices whereas NCs with sparse ligand coverage assemble into body-centered cubic (bcc) superlattices which also exhibit orientational ordering of NCs in their lattice sites. Surface chemistry characterization combined with density functional theory calculations suggest that the loss of ligands occurs preferentially on {100} than on reconstructed {111} NC facets. The resulting anisotropic ligand distribution amplifies the role of NC shape in the assembly and leads to the formation of superlattices with translational and orientational order. © 2011 American Chemical Society.

Controlling Nanocrystal Superlattice Symmetry and Shape-Anisotropic Interactions through Variable Ligand Surface Coverage

KAUST Repository

Choi, Joshua J.

2011-03-09

The assembly of colloidal nanocrystals (NCs) into superstructures with long-range translational and orientational order is sensitive to the molecular interactions between ligands bound to the NC surface. We illustrate how ligand coverage on colloidal PbS NCs can be exploited as a tunable parameter to direct the self-assembly of superlattices with predefined symmetry. We show that PbS NCs with dense ligand coverage assemble into face-centered cubic (fcc) superlattices whereas NCs with sparse ligand coverage assemble into body-centered cubic (bcc) superlattices which also exhibit orientational ordering of NCs in their lattice sites. Surface chemistry characterization combined with density functional theory calculations suggest that the loss of ligands occurs preferentially on {100} than on reconstructed {111} NC facets. The resulting anisotropic ligand distribution amplifies the role of NC shape in the assembly and leads to the formation of superlattices with translational and orientational order. © 2011 American Chemical Society.

Superlattice Microstructured Optical Fiber

Science.gov (United States)

Tse, Ming-Leung Vincent; Liu, Zhengyong; Cho, Lok-Hin; Lu, Chao; Wai, Ping-Kong Alex; Tam, Hwa-Yaw

2014-01-01

A generic three-stage stack-and-draw method is demonstrated for the fabrication of complex-microstructured optical fibers. We report the fabrication and characterization of a silica superlattice microstructured fiber with more than 800 rhomboidally arranged air-holes. A polarization-maintaining fiber with a birefringence of 8.5 × 10−4 is demonstrated. The birefringent property of the fiber is found to be highly insensitive to external environmental effects, such as pressure. PMID:28788693

Nanoscale form dictates mesoscale function in plasmonic DNA–nanoparticle superlattices

Energy Technology Data Exchange (ETDEWEB)

Ross, Michael B.; Ku, Jessie C.; Vaccarezza, Victoria M.; Schatz, George C.; Mirkin , Chad A. (NWU)

2016-06-15

The nanoscale manipulation of matter allows properties to be created in a material that would be difficult or even impossible to achieve in the bulk state. Progress towards such functional nanoscale architectures requires the development of methods to precisely locate nanoscale objects in three dimensions and for the formation of rigorous structure–function relationships across multiple size regimes (beginning from the nanoscale). Here, we use DNA as a programmable ligand to show that two- and three-dimensional mesoscale superlattice crystals with precisely engineered optical properties can be assembled from the bottom up. The superlattices can transition from exhibiting the properties of the constituent plasmonic nanoparticles to adopting the photonic properties defined by the mesoscale crystal (here a rhombic dodecahedron) by controlling the spacing between the gold nanoparticle building blocks. Furthermore, we develop a generally applicable theoretical framework that illustrates how crystal habit can be a design consideration for controlling far-field extinction and light confinement in plasmonic metamaterial superlattices.

Single-crystal FCC and DHCP phases in Ce/Pr superlattices

International Nuclear Information System (INIS)

Lee, S.; Goff, J.P.; Ward, R.C.C.; Wells, M.R.; McIntyre, G.J.

2002-01-01

Cerium usually comprises a mixture of polycrystalline FCC and DHCP allotropes. Single-crystal Ce has been stabilised in Ce/Pr superlattices grown using molecular beam epitaxy. It is found that FCC or DHCP phases can be obtained depending on superlattice composition and growth conditions. Low-temperature neutron scattering was performed on Ce/Pr samples using the triple-axis spectrometer D10 at the ILL. Such measurements revealed one sample, [Ce 20 Pr 20 ] 60 , to be a single crystal with a DHCP unit cell; while another, [Ce 30 Pr 10 ] 56 , was a mixture of FCC and DHCP phases. Antiferromagnetic ordering of magnetic moments was observed in the DHCP sample (T N =11.1 K) with a magnetic structure similar to that found in bulk β-Ce. Surprisingly, the magnetic ordering was found to be confined to single Ce blocks. Furthermore, it was found that, at low temperatures, the lattice contraction observed for bulk FCC Ce was suppressed in Ce/Pr superlattices. (orig.)

Modulating nanoparticle superlattice structure using proteins with tunable bond distributions

International Nuclear Information System (INIS)

McMillan, Janet R.; Brodin, Jeffrey D.; Millan, Jaime A.; Lee, Byeongdu; Olvera de la Cruz, Monica; Mirkin, Chad A.

2017-01-01

Here, we investigate the use of proteins with tunable DNA modification distributions to modulate nanoparticle superlattice structure. Using Beta-galactosidase (βgal) as a model system, we have employed the orthogonal chemical reactivities of surface amines and thiols to synthesize protein-DNA conjugates with 36 evenly distributed or 8 specifically positioned oligonucleotides. When assembled into crystalline superlattices with AuNPs, we find that the distribution of DNA modifications modulates the favored structure: βgal with uniformly distributed DNA bonding elements results in body-centered cubic crystals, whereas DNA functionalization of cysteines results in AB 2 packing. We probe the role of protein oligonucleotide number and conjugate size on this observation, which revealed the importance of oligonucleotide distribution and number in this observed assembly behavior. These results indicate that proteins with defined DNA-modification patterns are powerful tools to control the nanoparticle superlattices architecture, and establish the importance of oligonucleotide distribution in the assembly behavior of protein-DNA conjugates.

Large negative differential resistance in graphene nanoribbon superlattices

Science.gov (United States)

Tseng, P.; Chen, C. H.; Hsu, S. A.; Hsueh, W. J.

2018-05-01

A graphene nanoribbon superlattice with a large negative differential resistance (NDR) is proposed. Our results show that the peak-to-valley ratio (PVR) of the graphene superlattices can reach 21 at room temperature with bias voltages between 90-220 mV, which is quite large compared with the one of traditional graphene-based devices. It is found that the NDR is strongly influenced by the thicknesses of the potential barrier. Therefore, the NDR effect can be optimized by designing a proper barrier thickness. The large NDR effect can be attributed to the splitting of the gap in transmission spectrum (segment of Wannier-Stark ladder) with larger thicknesses of barrier when the applied voltage increases.

A possible radiation-resistant solar cell geometry using superlattices

Science.gov (United States)

Goradia, C.; Clark, R.; Brinker, D.

1985-01-01

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Low Dimensional Semiconductor Structures Characterization, Modeling and Applications

CERN Document Server

Horing, Norman

2013-01-01

Starting with the first transistor in 1949, the world has experienced a technological revolution which has permeated most aspects of modern life, particularly over the last generation. Yet another such revolution looms up before us with the newly developed capability to control matter on the nanometer scale. A truly extraordinary research effort, by scientists, engineers, technologists of all disciplines, in nations large and small throughout the world, is directed and vigorously pressed to develop a full understanding of the properties of matter at the nanoscale and its possible applications, to bring to fruition the promise of nanostructures to introduce a new generation of electronic and optical devices. The physics of low dimensional semiconductor structures, including heterostructures, superlattices, quantum wells, wires and dots is reviewed and their modeling is discussed in detail. The truly exceptional material, Graphene, is reviewed; its functionalization and Van der Waals interactions are included h...

Development of high-capacity nickel-metal hydride batteries using superlattice hydrogen-absorbing alloys

Science.gov (United States)

Yasuoka, Shigekazu; Magari, Yoshifumi; Murata, Tetsuyuki; Tanaka, Tadayoshi; Ishida, Jun; Nakamura, Hiroshi; Nohma, Toshiyuki; Kihara, Masaru; Baba, Yoshitaka; Teraoka, Hirohito

New R-Mg-Ni (R: rare earths) superlattice alloys with higher-capacity and higher-durability than the conventional Mm-Ni alloys with CaCu 5 structure have been developed. The oxidation resistibility of the superlattice alloys has been improved by optimizing the alloy composition by such as substituting aluminum for nickel and optimizing the magnesium content in order to prolong the battery life. High-capacity nickel-metal hydride batteries for the retail market, the Ni-MH2500/900 series (AA size type 2500 mAh, AAA size type 900 mAh), have been developed and commercialized by using an improved superlattice alloy for negative electrode material.

Charge dynamics in graphene and graphene superlattices under a high-frequency electric field: a semiclassical approach

International Nuclear Information System (INIS)

Kryuchkov, S V; Kukhar’, E I; Zav’yalov, D V

2013-01-01

The semiclassical theory of the dynamics of the charge carriers in graphene and in graphene superlattices exposed to a high-frequency electric field is developed. The dispersion law of the solid averaged over the period of the high-frequency electric field is found with the Kapitza method. The band gap in graphene is shown to arise under a high-frequency electric field polarized circularly. The effective mass of charge carriers in the center of the Brillouin band of the graphene superlattice is found to change sign under certain values of the amplitude of the high-frequency field. These values are shown to determine the bounds of the regions of the electromagnetic 2π-pulse stability. The dynamics of the π-pulse in a graphene superlattice is studied. (paper)

Low temperature synthesis of Mo2C/W2C superlattices via ultra-thin modulated reactants

International Nuclear Information System (INIS)

Johnson, C.D.; Johnson, D.C.

1996-01-01

The authors report here a synthesis method of preparing carbide superlattices using ultra-thin modulated reactants. Initial investigations into the synthesis of the binary systems, Mo 2 C and W 2 C using ultra-thin modulated reactants revealed that both can be formed at relatively low temperatures (500 and 600 C respectively). DSC and XRD data suggested a two step reaction pathway involving interdiffusion of the initial modulated reactant followed by crystallization of the final product, if the modulation length is on the order of 10 angstrom. This information was used to form Mo 2 C/W 2 C superlattices using the structure of the ultra-thin modulated reactant to control the final superlattice period. Relatively large superlattice modulations were kinetically trapped by having several repeat units of each binary within the total repeat of the initial reactant. DSC and XRD data again are consistent with a two step reaction pathway leading to the formation of carbide superlattices

Generation of three-mode continuous-variable entanglement by cascaded nonlinear interactions in a quasiperiodic superlattice

International Nuclear Information System (INIS)

Yu, Y. B.; Xie, Z. D.; Yu, X. Q.; Li, H. X.; Xu, P.; Yao, H. M.; Zhu, S. N.

2006-01-01

The generation of three-mode continuous-variable entanglement in a quasiperiodically optical superlattice is studied theoretically in this paper. This work is based on the previous experiment result in which three-color light generated from a quasiperiodically optical superlattice through a stimulated parametric down-conversion cascaded with a sum-frequency process. The degree of quadrature phase amplitude correlations, a nonclassical characteristic, among the three mode was discussed by a sufficient inseparability criterion for continuous-variable entanglement, which was proposed by van Loock and Furusawa

Synchrotron spectroscopy of confined carriers in CdF{sub 2}-CaF{sub 2} superlattices

Energy Technology Data Exchange (ETDEWEB)

Ivanovskikh, K. V. [Department of Physics and Astronomy, University of Canterbury, PB 4800, Christchurch 8140 (New Zealand); Institute of Physics and Technology, Ural Federal University, Ekaterinburg 620002 (Russian Federation); Hughes-Currie, R. B. [Department of Physics and Astronomy, University of Canterbury, PB 4800, Christchurch 8140 (New Zealand); Reid, M. F.; Reeves, R. J. [MacDiarmid Institute for Advanced Materials and Nanotechnology, P.O. Box 600, Wellington 6140 (New Zealand); Dodd-Walls Centre for Photonic and Quantum Technologies and Department of Physics and Astronomy, University of Canterbury, PB4800, Christchurch 8140 (New Zealand); Wells, J.-P. R., E-mail: jon-paul.wells@canterbury.ac.nz [Dodd-Walls Centre for Photonic and Quantum Technologies and Department of Physics and Astronomy, University of Canterbury, PB4800, Christchurch 8140 (New Zealand); Sokolov, N. S. [Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

2016-03-14

Luminescence spectroscopic and temporal dynamic properties of high energy elementary excitations in CdF{sub 2}-CaF{sub 2} superlattices have been studied utilising excitation with vacuum ultraviolet and X-ray synchrotron radiation while comparing the results with those obtained for CdF{sub 2} and CaF{sub 2} bulk crystals. It is shown that the optical properties of the superlattice structures are determined by exciton emission in the CdF{sub 2} monolayers. The experimental manifestations of exciton confinement phenomena are discussed.

ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

Science.gov (United States)

Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

2018-05-01

In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

Space-time evolution of Gaussian wave packets through superlattices containing left-handed layers

Energy Technology Data Exchange (ETDEWEB)

Pereyra, P; Romero-Serrano, M [Departamento de Ciencias Basicas, Universidad Autonoma Metropolitana-Azcapotzalco, Mexico DF (Mexico); Robledo-Martinez, A, E-mail: ppereyra@correo.azc.uam.m, E-mail: a.robledo@mailaps.or [Departamento de EnergIa, Universidad Autonoma Metropolitana-Azcapotzalco, Mexico DF (Mexico)

2009-05-01

We study the space-time evolution of Gaussian electromagnetic wave packets moving through (L/R){sup n} superlattices, containing alternating layers of left and right-handed materials. We show that the time spent by the wave packet moving through arbitrary (L/R){sup n} superlattices are well described by the phase time. We show that in the particular case where the thicknesses d{sub L,R} and indices n{sub l,r} of the layers satisfy the condition d{sub L}|n{sub L}| = d{sub R}n{sub R}, the usual band structure becomes a sequence of isolated and equidistant peaks with negative phase times.

Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

DEFF Research Database (Denmark)

Gorczyca, I.; Suski, T.; Christensen, Niels Egede

2012-01-01

InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite InN/G...... wells and barriers one may tune band gaps over a wide spectral range, which provides flexibility in band gap engineering.......InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite In......N/GaN(0001) superlattices are investigated, and the variation of the band gap with the thicknesses of the well and the barrier is discussed. Superlattices of the form mInN/nGaN with n ≥ m are simulated using band structure calculations in the Local Density Approximation with a semiempirical correction...

RBS studies of the lattice damage caused by 1 MeV Si+ implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature

International Nuclear Information System (INIS)

Xu Tianbing; Zhu Peiran; Zhou Junsi; Li Daiqing; Gong Baoan; Wan Ya; Mu Shanming; Zhao Qingtai; Wang Zhonglie

1994-01-01

The lattice damage accumulation in GaAs and Al 0.3 Ga 0.7 As/GaAs superlattices by 1 MeV Si + irradiation at room temperature and 350 C has been studied. For irradiations at 350 C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10 15 Si/cm 2 for GaAs, and is 5 x 10 15 Si/cm 2 for Al 0.8 Ga 0.7 As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350 C. The damage accumulation rate for 1 MeV Si ion implantation in Al 0.3 Ga 0.7 As/GaAs superlattice is less than that in GaAs. (orig.)

Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

KAUST Repository

Cossu, Fabrizio; Tahini, Hassan Ali; Singh, Nirpendra; Schwingenschlö gl, Udo

2017-01-01

Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\text{LaMnO}_3)_{6-x}\\vert(\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

KAUST Repository

Cossu, Fabrizio

2017-08-01

Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\\\text{LaMnO}_3)_{6-x}\\\\vert(\\\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

Cross-plane Thermoelectric Transport in p-type La0.67Sr0.33MnO3/LaMnO3 Oxide Metal/Semiconductor Superlattices

Science.gov (United States)

2013-12-07

fre- quency of 5 Hz, and temperature maintained at 750 C measured using an infrared pyrometer (STO emissivity of 0.8). The target was mechanically...thermoelectric transport Thermal conductivity of LSMO/LMO superlattices was measured using a photo- acoustic (PA) technique.18,19 The high resistivity...multilayer material,” J. Appl. Phys. 86(7), 3953 (1999). 19X. W. Wang, H. P. Hu, and X. F. Xu, “Photo- acoustic measurement of thermal conductivity of

Hierarchical self-assembly of hexagonal single-crystal nanosheets into 3D layered superlattices with high conductivity

Science.gov (United States)

Tao, Yulun; Shen, Yuhua; Yang, Liangbao; Han, Bin; Huang, Fangzhi; Li, Shikuo; Chu, Zhuwang; Xie, Anjian

2012-05-01

While the number of man-made nano superstructures realized by self-assembly is growing in recent years, assemblies of conductive polymer nanocrystals, especially for superlattices, are still a significant challenge, not only because of the simplicity of the shape of the nanocrystal building blocks and their interactions, but also because of the poor control over these parameters in the fabrication of more elaborate nanocrystals. Here, we firstly report a facile and general route to a new generation of 3D layered superlattices of polyaniline doped with CSA (PANI-CSA) and show how PANI crystallize and self-assemble, in a suitable single solution environment. In cyclohexane, 1D amorphous nanofibers transformed to 1D nanorods as building blocks, and then to 2D single-crystal nanosheets with a hexagonal phase, and lastly to 3D ordered layered superlattices with the narrowest polydispersity value (Mw/Mn = 1.47). Remarkably, all the instructions for the hierarchical self-assembly are encoded in the layered shape in other non-polar solvents (hexane, octane) and their conductivity in the π-π stacking direction is improved to about 50 S cm-1, which is even higher than that of the highest previously reported value (16 S cm-1). The method used in this study is greatly expected to be readily scalable to produce superlattices of conductive polymers with high quality and low cost.While the number of man-made nano superstructures realized by self-assembly is growing in recent years, assemblies of conductive polymer nanocrystals, especially for superlattices, are still a significant challenge, not only because of the simplicity of the shape of the nanocrystal building blocks and their interactions, but also because of the poor control over these parameters in the fabrication of more elaborate nanocrystals. Here, we firstly report a facile and general route to a new generation of 3D layered superlattices of polyaniline doped with CSA (PANI-CSA) and show how PANI crystallize and

Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

Science.gov (United States)

Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

2017-06-01

Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

Free-Standing Metal Oxide Nanoparticle Superlattices Constructed with Engineered Protein Containers Show in Crystallo Catalytic Activity.

Science.gov (United States)

Lach, Marcel; Künzle, Matthias; Beck, Tobias

2017-12-11

The construction of defined nanostructured catalysts is challenging. In previous work, we established a strategy to assemble binary nanoparticle superlattices with oppositely charged protein containers as building blocks. Here, we show that these free-standing nanoparticle superlattices are catalytically active. The metal oxide nanoparticles inside the protein scaffold are accessible for a range of substrates and show oxidase-like and peroxidase-like activity. The stable superlattices can be reused for several reaction cycles. In contrast to bulk nanoparticle-based catalysts, which are prone to aggregation and difficult to characterize, nanoparticle superlattices based on engineered protein containers provide an innovative synthetic route to structurally defined heterogeneous catalysts with control over nanoparticle size and composition. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Waves in man-made materials: superlattice to metamaterials

Science.gov (United States)

Tsu, Raphael; Fiddy, Michael A.

2014-07-01

While artificial or man-made structures date back to Lord Rayleigh, the work started by Lewin in 1947, placing spheres onto cubic lattices, greatly enriched microwave materials and devices. It was very suggestive of both metamaterials and photonics crystals. Effective medium models were used to describe bulk properties with some success. The concept of metamaterials followed photonic crystals, and these both were introduced after the introduction of the man-made superlattices designed to enrich the class of materials for electronic devices. The work on serrated ridged waveguides by Kirschbaum and Tsu for the control of the refractive index of microwave lenses as well as microwave matching devices in 1959 used a combination of theory, such as Floquet's theory, Bloch theory in one dimension, as well as periodic lumped loading. There is much in common between metamaterials and superlattices, but in this paper, we discuss some practical limitations to both. It is pointed out that unlike superlattices where kl > 1 is the most important criterion, metamaterials try to avoid involve such restrictions. However, the natural random fluctuations that limit the properties of naturally occurring materials are shown to take a toll on the theoretical predictions of metamaterials. The question is how great that toll, i.e. how significant those fluctuations will be, in diminishing the unusual properties that metamaterials can exhibit.

Manganite/Cuprate Superlattice as Artificial Reentrant Spin Glass

KAUST Repository

Ding, Junfeng

2016-05-04

Emerging physical phenomena at the unit-cell-controlled interfaces of transition-metal oxides have attracted lots of interest because of the rich physics and application opportunities. This work reports a reentrant spin glass behavior with strong magnetic memory effect discovered in oxide heterostructures composed of ultrathin manganite La0.7Sr0.3MnO3 (LSMO) and cuprate La2CuO4 (LCO) layers. These heterostructures are featured with enhanced ferromagnetism before entering the spin glass state: a Curie temperature of 246 K is observed in the superlattice with six-unit-cell LSMO layers, while the reference LSMO film with the same thickness shows much weaker magnetism. Furthermore, an insulator-metal transition emerges at the Curie temperature, and below the freezing temperature the superlattices can be considered as a glassy ferromagnetic insulator. These experimental results are closely related to the interfacial spin reconstruction revealed by the first-principles calculations, and the dependence of the reentrant spin glass behavior on the LSMO layer thickness is in line with the general phase diagram of a spin system derived from the infinite-range SK model. The results of this work underscore the manganite/cuprate superlattices as a versatile platform of creating artificial materials with tailored interfacial spin coupling and physical properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Band structure of ABC-trilayer graphene superlattice

International Nuclear Information System (INIS)

Uddin, Salah; Chan, K. S.

2014-01-01

We investigate the effect of one-dimensional periodic potentials on the low energy band structure of ABC trilayer graphene first by assuming that all the three layers have the same potential. Extra Dirac points having the same electron hole crossing energy as that of the original Dirac point are generated by superlattice potentials with equal well and barrier widths. When the potential height is increased, the numbers of extra Dirac points are increased. The dispersions around the Dirac points are not isotropic. It is noted that the dispersion along the k y direction for k x  = 0 oscillates between a non-linear dispersion and a linear dispersion when the potential height is increased. When the well and barrier widths are not identical, the symmetry of the conduction and valence bands is broken. The extra Dirac points are shifted either upward or downward depending on the barrier and well widths from the zero energy, while the position of the central Dirac point oscillates with the superlattice potential height. By considering different potentials for different layers, extra Dirac points are generated not from the original Dirac points but from the valleys formed in the energy spectrum. Two extra Dirac points appear from each pair of touched valleys, so four Dirac points appeared in the spectrum at particular barrier height. By increasing the barrier height of superlattice potential two Dirac points merge into the original Dirac point. This emerging and merging of extra Dirac points is different from the equal potential case

Energy minibands degeneration induced by magnetic field effects in graphene superlattices

Science.gov (United States)

Reyes-Villagrana, R. A.; Carrera-Escobedo, V. H.; Suárez-López, J. R.; Madrigal-Melchor, J.; Rodríguez-Vargas, I.

2017-12-01

Energy minibands are a basic feature of practically any superlattice. In this regard graphene superlattices are not the exception and recently miniband transport has been reported through magneto-transport measurements. In this work, we compute the energy miniband and transport characteristics for graphene superlattices in which the energy barriers are generated by magnetic and electric fields. The transfer matrix approach and the Landauer-Büttiker formalism have been implemented to calculate the energy minibands and the linear-regime conductance. We find that energy minibands are very sensitive to the magnetic field and become degenerate by rising it. We were also able to correlate the evolution of the energy minibands as a function of the magnetic field with the transport characteristics, finding that miniband transport can be destroyed by magnetic field effects. Here, it is important to remark that although magnetic field effects have been a key element to unveil miniband transport, they can also destroy it.

The Luttinger liquid in superlattice structures: atomic gases, quantum dots and the classical Ising chain

International Nuclear Information System (INIS)

Bhattacherjee, Aranya B; Jha, Pradip; Kumar, Tarun; Mohan, Man

2011-01-01

We study the physical properties of a Luttinger liquid in a superlattice that is characterized by alternating two tunneling parameters. Using the bosonization approach, we describe the corresponding Hubbard model by the equivalent Tomonaga-Luttinger model. We analyze the spin-charge separation and transport properties of the superlattice system. We suggest that cold Fermi gases trapped in a bichromatic optical lattice and coupled quantum dots offer the opportunity to measure these effects in a convenient manner. We also study the classical Ising chain with two tunneling parameters. We find that the classical two-point correlator decreases as the difference between the two tunneling parameters increases.

Correlating interfacial octahedral rotations with magnetism in (LaMnO3+δ)N/(SrTiO3)N superlattices.

Science.gov (United States)

Zhai, Xiaofang; Cheng, Long; Liu, Yang; Schlepütz, Christian M; Dong, Shuai; Li, Hui; Zhang, Xiaoqiang; Chu, Shengqi; Zheng, Lirong; Zhang, Jing; Zhao, Aidi; Hong, Hawoong; Bhattacharya, Anand; Eckstein, James N; Zeng, Changgan

2014-07-09

Lattice distortion due to oxygen octahedral rotations have a significant role in mediating the magnetism in oxides, and recently attracts a lot of interests in the study of complex oxides interface. However, the direct experimental evidence for the interrelation between octahedral rotation and magnetism at interface is scarce. Here we demonstrate that interfacial octahedral rotation are closely linked to the strongly modified ferromagnetism in (LaMnO3+δ)N/(SrTiO3)N superlattices. The maximized ferromagnetic moment in the N=6 superlattice is accompanied by a metastable structure (space group Imcm) featuring minimal octahedral rotations (a(-)a(-)c(-), α~4.2°, γ~0.5°). Quenched ferromagnetism for Nmagnetism. Our study demonstrates that engineering superlattices with controllable interfacial structures can be a feasible new route in realizing functional magnetic materials.

THz laser based on quasi-periodic AlGaAs superlattices

Energy Technology Data Exchange (ETDEWEB)

Malyshev, K V [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation)

2013-06-30

The use of quasi-periodic AlGaAs superlattices as an active element of a quantum cascade laser of terahertz range is proposed and theoretically investigated. A multi-colour emission, having from three to six peaks of optical gain, is found in Fibonacci, Thue-Morse, and figurate superlattices in electric fields of intensity F = 11 - 13 kV cm{sup -1} in the frequency range f = 2 - 4 THz. The peaks depend linearly on the electric field, retain the height of 20 cm{sup -1}, and strongly depend on the thickness of the AlGaAs-layers. (lasers)

Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

Science.gov (United States)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1998-01-01

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

Touching points in the energy band structure of bilayer graphene superlattices

International Nuclear Information System (INIS)

Pham, C Huy; Nguyen, V Lien

2014-01-01

The energy band structure of the bilayer graphene superlattices with zero-averaged periodic δ-function potentials are studied within the four-band continuum model. Using the transfer matrix method, the study is mainly focused on examining the touching points between adjacent minibands. For the zero-energy touching points the dispersion relation derived shows a Dirac-like double-cone shape with the group velocity which is periodic in the potential strength P with the period of π and becomes anisotropic at relatively large P. From the finite-energy touching points we have identified those located at zero wave-number. It was shown that for these finite-energy touching points the dispersion is direction-dependent in the sense that it is linear or parabolic in the direction parallel or perpendicular to the superlattice direction, respectively. We have also calculated the density of states and the conductivity which demonstrates a manifestation of the touching points examined. (paper)

Anisotropic critical fields in superconducting superlattices

International Nuclear Information System (INIS)

Banerjee, I.; Yang, Q.S.; Falco, C.M.; Schuller, I.K.

1983-01-01

The temperature and angular dependence of critical fields (H/sub c/) have been studied as a function of layer thickness for superconducting Nb/Cu superlattices. For layer thicknesses between 100 and 300 A, dimensional crossover has been observed in the temperature dependence of H/sub c/. Associated with the crossover we find a change in the angular dependence of H/sub c/ to that given by the effective-mass theory. This is the first time that a relationship has been found between dimensional crossover observed in the temperature dependence and that in the angular dependence of critical fields

Enhancement of dielectric and ferroelectric properties of PbZrO3/PbTiO3 artificial superlattices

International Nuclear Information System (INIS)

Choi, Taekjib; Lee, Jaichan

2005-01-01

PbZrO 3 (PZO)/PbTiO 3 (PTO) artificial superlattices have been grown on La 0.5 Sr 0.5 CoO 3 (LSCO) (100)/MgO (100) substrate by pulsed laser deposition with various stacking periods from 1 to 100 unit cells. The PZO/PTO artificial lattice exhibited a diffraction pattern characteristic of a superlattice structure, i.e., a main diffraction peak with satellite peaks. The electrical properties of the superlattices were investigated as a function of the stacking period. The dielectric constant and remnant polarization improved on decreasing the stacking periodicity. The dielectric constant of the superlattice reached 800 at a stacking period of 1unit cell/1unit cell (PZO 1 /PTO 1 ), which is larger than that of the single PZT solid-solution film. Moreover, the remnant polarization reached a maximum, 2Pr = 38.7 μC/cm 2 , at a 2-unit-cell stacking period. Progressive enhancement of dielectric constant and remnant polarization in artificial PZO/PTO superlattice was accompanied by expansion of the (100)-plane spacing on decreasing the stacking periodicity. These results suggest that the lattice strain developed in the PZO/PTO superlattice may have influence on dielectric constant and ferroelectric behavior.

Tunneling time and Hartman effect in a ferromagnetic graphene superlattice

Directory of Open Access Journals (Sweden)

Farhad Sattari

2012-03-01

Full Text Available Using transfer-matrix and stationary phase methods, we study the tunneling time (group delay time in a ferromagnetic monolayer graphene superlattice. The system we peruse consists of a sequence of rectangular barriers and wells, which can be realized by putting a series of electronic gates on the top of ferromagnetic graphene. The magnetization in the two ferromagnetic layers is aligned parallel. We find out that the tunneling time for normal incident is independent of spin state of electron as well as the barrier height and electron Fermi energy while for the oblique incident angles the tunneling time depends on the spin state of electron and has an oscillatory behavior. Also the effect of barrier width on tunneling time is also investigated and shown that, for normal incident, the Hartman effect disappears in a ferromagnetic graphene superlattice but it appears for oblique incident angles when the x component of the electron wave vector in the barrier is imaginary.

InAs/GaSb type-II superlattice infrared detectors: three decades of development

Science.gov (United States)

Rogalski, A.; Kopytko, M.; Martyniuk, P.

2017-02-01

Recently, there has been considerable progress towards III-V antimonide-based low dimensional solids development and device design innovations. From a physics point of view, the type-II InAs/GaSb superlattice is an extremely attractive proposition. Their development results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe FPAs at reasonable cost and theoretical predictions of lower Auger recombination for type-II superlattice (T2SL) detectors compared to HgCdTe. Lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall lifetime are equal. Based on these promising results it is obvious now that the InAs/GaSb superlattice technology is competing with HgCdTe third generation detector technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing. Comments to the statement whether the superlattice IR photodetectors can outperform the "bulk" narrow gap HgCdTe detectors is one of the most important questions for the future of IR photodetectors presented by Rogalski at the April 2006 SPIE meeting in Orlando, Florida, are more credible today and are presented in this paper. It concerns the trade-offs between two most competing IR material technologies: InAs/GaSb type-II superlattices and HgCdTe ternary alloy system.

Tunable electronic and magnetism of SrTiO{sub 3}/BiFeO{sub 3} (001) superlattice: For electrochemical applications

Energy Technology Data Exchange (ETDEWEB)

Xu, Qiang; Sopiha, Kostiantyn; Sobhan, Mushtaq; Anariba, Franklin; Wu, Ping, E-mail: wuping@sutd.edu.sg [Entropic Interface Group (EIG), Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372 (Singapore); Ong, Khuong Phuong; Zheng, Jian Wei [Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research - A*Star, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore)

2016-01-04

Practical strategy in tuning the conductivity and magnetism of SrTiO{sub 3}/BiFeO{sub 3} (STO/BFO) (001) superlattice is investigated using the first-principles method based on density functional theory. Our calculated results show that both the conductivity and magnetism of this superlattice can be tuned via a control of its interface terminations. The STO layers maintain semiconducting, while the BFO layers demonstrate metallic character. Therefore, the conductivity of STO/BFO is controlled by the BFO layers. Furthermore, a magnetic STO/BFO (001) superlattice can be found in n-type TiO{sub 2}/BiO interface but with heavy electron carriers. The thickness of BFO does not change the electronic structure and character of STO/BFO (001) superlattice. This study provides a fundamental understanding of the chemically turned conductivity and magnetism of BFO thin films, which may further advance electrochemical applications like magnetic-field aided chemical gas sensing, solar cells, and photo-catalytic chemical reactions.

Synchrotron radiation studies of inorganic-organic semiconductor interfaces

International Nuclear Information System (INIS)

Evans, D.A.; Steiner, H.J.; Vearey-Roberts, A.R.; Bushell, A.; Cabailh, G.; O'Brien, S.; Wells, J.W.; McGovern, I.T.; Dhanak, V.R.; Kampen, T.U.; Zahn, D.R.T.; Batchelor, D.

2003-01-01

Organic semiconductors (polymers and small molecules) are widely used in electronic and optoelectronic technologies. Many devices are based on multilayer structures where interfaces play a central role in device performance and where inorganic semiconductor models are inadequate. Synchrotron radiation techniques such as photoelectron spectroscopy (PES), near-edge X-ray absorption fine structure (NEXAFS) and X-ray standing wave spectroscopy (XSW) provide a powerful means of probing the structural, electronic and chemical properties of these interfaces. The surface-specificity of these techniques allows key properties to be monitored as the heterostructure is fabricated. This methodology has been directed at the growth of hybrid organic-inorganic semiconductor interfaces involving copper phthalocyanine as the model organic material and InSb and GaAs as the model inorganic semiconductor substrates. Core level PES has revealed that these interfaces are abrupt and chemically inert due to the weak bonding between the molecules and the inorganic semiconductor. NEXAFS studies have shown that there is a preferred orientation of the molecules within the organic semiconductor layers. The valence band offsets for the heterojunctions have been directly measured using valence level PES and were found to be very different for copper phthalocyanine on InSb and GaAs (0.7 and -0.3 eV respectively) although an interface dipole is present in both cases

Ferromagnetic resonance study of structure and relaxation of magnetization in NiFe/Ru superlattices

Energy Technology Data Exchange (ETDEWEB)

Alayo, W., E-mail: willian.rodriguez@ufpel.edu.br [Depto. de Física, Univ. Federal de Pelotas, Campus Universitário, 96010-900, Pelotas, RS (Brazil); Landi Jr, S. [Instituto Federal Goiano, Rio Verde 75901-970 (Brazil); Pelegrini, F. [Instituto de Física, Universidade Federal de Goiás, Goiânia 74001-970 (Brazil); Baggio-Saitovitch, E. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180 (Brazil)

2014-01-15

The structural properties and relaxation processes of magnetization in [Ni{sub 81}Fe{sub 19}(t{sub 1})/Ru(t{sub 2})]{sub N} superlattices (N=number of bilayers) were analyzed by ferromagnetic resonance (FMR) with a fixed microwave frequency. One series of samples was deposited with constant NiFe layer thickness (t{sub 1}) and variable Ru layer thickness (t{sub 2}); the other series, with constant t{sub 2} and variable t{sub 1}. A single FMR mode was observed for t{sub 2}<15 Å and t{sub 1}>75 Å and it has been attributed to the resonance of the exchange-coupled NiFe layers across the Ru interlayers. For the other values of t{sub 1} and t{sub 2}, several FMR modes appeared and they were associated to non-coupled magnetic phases with different effective magnetization formed during the multilayer growth. The FMR linewidths were analyzed as a function of the magnetic layer thickness and a strong dependence on t{sub 1}{sup −2} was observed. It was attributed to the contribution of the two-magnon scattering mechanism for the linewidth. - Highlights: • We present a study of magnetic properties of NiFe/Ru superlattices by ferromagnetic resonance (FMR). • The FMR spectra show several modes for large Ru thicknesses and for low NiFe thicknesses. • The above behavior is correlated with the interlayer exchange coupling. • The two-magnon scattering mechanism is revealed by the dependence of the FMR linewidth on the NiFe thickness.

InGaAs/InAlAs superlattice detector for THz radiation

CERN Document Server

Schomburg, E; Kratschmer, M; Vollnhals, A; Scheuerer, R; Renk, K F; Ustinov, V; Zhukov, A; Kovsh, A

2002-01-01

We report the use of an InGaAs/InAlAs superlattice for detection of THz radiation pulses generated by a free-electron-laser (FELIX). The detector showed a response corresponding to a reduction of the direct current through the superlattice. The current reduction is attributed to the THz-field induced modulation of Bloch oscillations performed by miniband electrons. The detector response was measured in a frequency range between 4 and 12 THz and showed strong minima at the frequencies of infrared active transverse optic phonons. (10 refs).

Two-dimensional thermoelectric Seebeck coefficient of SrTiO3-based superlattices

International Nuclear Information System (INIS)

Ohta, Hiromichi

2008-01-01

This review provides the origin of the unusually large thermoelectric Seebeck coefficient vertical stroke S vertical stroke of a two-dimensional electron gas confined within a unit cell layer thickness (∝0.4 nm) of a SrTi 0.8 Nb 0.2 O 3 layer of artificial superlattices of SrTiO 3 /SrTi 0.8 Nb 0.2 O 3 [H. Ohta et al., Nature Mater. 6, 129 (2007)]. The vertical stroke S vertical stroke 2D values of the[(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) y ] 20 superlattice increase proportional to y -0.5 , and reach 290 μV K -1 (y=1) at room temperature, which is ∝5 times larger than that of the SrTi 0.8 Nb 0.2 O 3 bulk (vertical stroke S vertical stroke 3D =61 μVK -1 ), proving that the density of states in the ground state for SrTiO 3 increases in inverse proportion to y. The critical barrier thickness for quantum electron confinement is also clarified to be 6.25 nm (16 unit cells of SrTiO 3 ). Significant structural changes are not observed in the superlattice after annealing at 900 K in a vacuum. The value of vertical stroke S vertical stroke 2D of the superlattice gradually increases with temperature and reaches 450 μVK -1 at 900 K, which is ∝3 times larger than that of bulk SrTi 0.8 Nb 0.2 O 3 . These observations provide clear evidence that the [(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) 1 ] 20 superlattice is stable and exhibits a giant vertical stroke S vertical stroke even at high temperature. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

OpenAIRE

Ji, Pengfei; Zhang, Yuwen; Yang, Mo

2016-01-01

The structural, dynamic, and vibrational properties during the heat transfer process in Si/Ge superlattices, are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) ar...

FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

Development of Strained-Layer Superlattice (SLS) IR Detector Camera

Data.gov (United States)

National Aeronautics and Space Administration — Strained Layer Superlattice (SLS) detectors are a new class of detectors which may be the next generation of band-gap engineered, large format infrared detector...

Raman analysis of phonon modes in a short period AlN/GaN superlattice

Science.gov (United States)

Sarkar, Ketaki; Datta, Debopam; Gosztola, David J.; Shi, Fengyuan; Nicholls, Alan; Stroscio, Michael A.; Dutta, Mitra

2018-03-01

AlN/GaN-based optoelectronic devices have been the subject of intense research underlying the commercialization of efficient devices. Areas of considerable interest are the study of their lattice dynamics, phonon transport, and electron-phonon interactions specific to the interface of these heterostructures which results in additional optical phonon modes known as interface phonon modes. In this study, the framework of the dielectric continuum model (DCM) has been used to compare and analyze the optical phonon modes obtained from experimental Raman scattering measurements on AlN/GaN short-period superlattices. We have observed the localized E2(high), A1(LO) and the E1(TO) modes in superlattice measurements at frequencies shifted from their bulk values. To the best of our knowledge, the nanostructures used in these studies are among the smallest yielding useful Raman signatures for the interface modes. In addition, we have also identified an additional spread of interface phonon modes in the TO range resulting from the superlattice periodicity. The Raman signature contribution from the underlying AlxGa1-xN ternary has also been observed and analyzed. A temperature calibration was done based on Stokes/anti-Stokes ratio of A1(LO) using Raman spectroscopy in a broad operating temperature range. Good agreement between the experimental results and theoretically calculated calibration plot predicted using Bose-Einstein statistics was obtained.

Magnetoelectric control of valley and spin in a silicene nanoribbon modulated by the magnetic superlattices

Energy Technology Data Exchange (ETDEWEB)

An, Xing-Tao, E-mail: anxt@hku.hk

2015-03-20

The control of valley and spin degrees of freedom and the transport properties of electrons in a zigzag silicene nanoribbon modulated by the magnetic superlattices are investigated theoretically. Due to the valley–spin locking effect in silicene, the valley degree of freedom can be controlled by magnetic means. The valley or/and spin selection induced by the exchange field result in the perfect spin–valley filter and tunneling magnetoresistance effect in the double ferromagnetic barriers on the surface of the silicene nanoribbon. It is more interesting that there are valley-resolved minigaps and minibands in the zigzag silicene nanoribbon modulated by the magnetic superlattices which give rise to the periodically modulated spin (or/and valley) polarization and tunneling magnetoresistance. The results obtained may have certain practical significance in applications for future valleytronic and spintronic devices. - Highlights: • The valley can be controlled by a magnetic field in silicene. • The valley-resolved miniband transport is studied in the silicene superlattices. • There are the perfect spin–valley filter and tunneling magnetoresistance effect.

Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

Science.gov (United States)

Hoffman, Jason D.; Wu, Stephen M.; Kirby, Brian J.; Bhattacharya, Anand

2018-04-01

Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magnetization dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show that by relaxing the strict criterion on pure antiferromagnetism, we can engineer an alternative class of magnetic materials that overcome these limitations. This is accomplished by stabilizing a noncollinear magnetic phase in LaNiO3 /La2 /3Sr1 /3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying the superlattice spacing, strain, applied magnetic field, or temperature. By using this alternative "knob" to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagneticlike controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable properties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the noncollinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.

Effects of underlying InGaN/GaN superlattice structures on the structural and optical properties of InGaN LEDs

Energy Technology Data Exchange (ETDEWEB)

Tsai, Chia-Lung, E-mail: cltsai@mail.cgu.edu.tw

2016-06-15

This study proposes the use of InGaN/GaN superlattices grown beneath InGaN multiple quantum wells (MQWs) and designed with different well widths to act as an electron emitter layer (EEL). Cross-sectional transmission electron microscopy reveals strong indium segregation in the underlying superlattices with a 5-nm-thick In{sub 0.1}Ga{sub 0.9}N well, thus corrupting the crystalline perfection of the resulting LEDs, and also increasing their leakage current. It was also found that the depth of the localized states increases with the well width of the underlying superlattices. In the proposed LEDs, variation in the biaxial strains of the superlattice EELs with different well widths results in an increase in indium incorporation of InGaN MQWs, thus obtaining a redshifted photoluminescence emission with respect to that of normal LED. Furthermore, the presence of relatively strong carrier localization and the alleviation of electron leakage from the InGaN MQWs results in improved light output performance from the proposed LEDs grown with a narrow In{sub 0.1}Ga{sub 0.9}N well in the underlying superlattices. Although growth in a wide In{sub 0.1}Ga{sub 0.9}N well (~3.5 nm) containing underlying superlattices suffers from poor crystalline quality due to partial strain relaxation, it resulted in improved roll-off behavior in terms of light intensity. This may be due to the improved hot electron cooling capacity mitigating the extent of carrier leakage. - Highlights: • In{sub 0.1}Ga{sub 0.9}N/GaN superlattices are used as an electron emitter layer. • Improved LED performance can be achieved using a narrow In{sub 0.1}Ga{sub 0.9}N well. • A wider well can further reduce carrier leakage despite poor quality is presented.

Optical properties of graphene superlattices.

Science.gov (United States)

Le, H Anh; Ho, S Ta; Nguyen, D Chien; Do, V Nam

2014-10-08

In this work, the optical responses of graphene superlattices, i.e. graphene subjected to a periodic scalar potential, are theoretically reported. The optical properties were studied by investigating the optical conductivity, which was calculated using the Kubo formalism. It was found that the optical conductivity becomes dependent on the photon polarization and is suppressed in the photon energy range of (0, Ub), where Ub is the potential barrier height. In the higher photon energy range, i.e. Ω > Ub, the optical conductivity is, however, almost identical to that of pristine graphene. Such behaviors of the optical conductivity are explained microscopically through the analysis of the elements of optical matrices and effectively through a simple model, which is based on the Pauli blocking mechanism.

Nanoscopic diffusion studies on III-V compound semiconductor structures: Experiment and theory

Science.gov (United States)

Gonzalez Debs, Mariam

The electronic structure of multilayer semiconductor heterostructures is affected by the detailed compositional profiles throughout the structure and at critical interfaces. The extent of interdiffusion across these interfaces places limits on both the processing time and temperatures for many applications based on the resultant compositional profile and associated electronic structure. Atomic and phenomenological methods were used in this work through the combination of experiment and theory to understand the nanoscopic mechanisms in complex heterostructures. Two principal studies were conducted. Tin diffusion in GaAs was studied by fitting complex experimental diffusion profiles to a phenomenological model which involved the diffusion of substitutional and interstitial dopant atoms. A methodology was developed combining both the atomistic model and the use of key features within these experimentally-obtained diffusion profiles to determine meaningful values of the transport and defect reaction rate parameters. Interdiffusion across AlSb/GaSb multi-quantum well interfaces was also studied. The chemical diffusion coefficient characterizing the AlSb/GaSb diffusion couple was quantitatively determined by fitting the observed photoluminescence (PL) peak shifts to the solution of the Schrodinger equation using a potential derived from the solution of the diffusion equation to quantify the interband transition energy shifts. First-principles calculations implementing Density Functional Theory were performed to study the thermochemistry of point defects as a function of local environment, allowing a direct comparison of interfacial and bulk diffusion phenomena within these nanoscopic structures. Significant differences were observed in the Ga and Al vacancy formation energies at the AlSb/GaSb interface when compared to bulk AlSb and GaSb with the largest change found for Al vacancies. The AlSb/GaSb structures were further studied using positron annihilation spectroscopy

Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

Directory of Open Access Journals (Sweden)

Debashis De

2011-07-01

Full Text Available The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation. The effect of magnetic quantization on the photoemission from the aforementioned superlattices, together with quantum well superlattices under magnetic quantization, has also been investigated in this regard. It appears, taking HgTe/Hg1−xCdxTe and InxGa1−xAs/InP effective mass superlattices, that the photoemission from these quantized structures is enhanced with increasing photon energy in quantized steps and shows oscillatory dependences with the increasing carrier concentration. In addition, the photoemission decreases with increasing light intensity and wavelength as well as with increasing thickness exhibiting oscillatory spikes. The strong dependence of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six different applications in the fields of low dimensional systems in general.

Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

International Nuclear Information System (INIS)

Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

2013-01-01

P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel

Phase transitions of a spin-one Ising ferromagnetic superlattice

International Nuclear Information System (INIS)

Saber, A.

2001-09-01

Using the effective field theory with a probability distribution technique, the magnetic properties in an infinite superlattice consisting of two different ferromagnets are studied in a spin-one Ising model. The dependence of the Curie temperatures are calculated as a function of two slabs in one period and as a function of the intra- and interlayer exchange interactions. A critical value of the exchange reduced interaction above which the interface magnetism appears is found. (author)

Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

International Nuclear Information System (INIS)

Wang, L.M.; Guo, C.-C.

2005-01-01

The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayers

KAUST Repository

Zhang, Chendong

2017-01-07

By using direct growth, we create a rotationally aligned MoS2/WSe2 hetero-bilayer as a designer van der Waals heterostructure. With rotational alignment, the lattice mismatch leads to a periodic variation of atomic registry between individual van der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity. By combining scanning tunneling microscopy/spectroscopy, transmission electron microscopy, and first-principles calculations, we investigate interlayer coupling as a function of atomic registry. We quantitatively determine the influence of interlayer coupling on the electronic structure of the hetero-bilayer at different critical points. We show that the direct gap semiconductor concept is retained in the bilayer although the valence and conduction band edges are located at different layers. We further show that the local bandgap is periodically modulated in the X-Y direction with an amplitude of ~0.15 eV, leading to the formation of a two-dimensional electronic superlattice.

Broadband mid-infrared superlattice light-emitting diodes

Science.gov (United States)

Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

2017-05-01

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

Theory and simulation of photogeneration and transport in Si-SiOx superlattice absorbers

Directory of Open Access Journals (Sweden)

Aeberhard Urs

2011-01-01

Full Text Available Abstract Si-SiOx superlattices are among the candidates that have been proposed as high band gap absorber material in all-Si tandem solar cell devices. Owing to the large potential barriers for photoexited charge carriers, transport in these devices is restricted to quantum-confined superlattice states. As a consequence of the finite number of wells and large built-in fields, the electronic spectrum can deviate considerably from the minibands of a regular superlattice. In this article, a quantum-kinetic theory based on the non-equilibrium Green's function formalism for an effective mass Hamiltonian is used for investigating photogeneration and transport in such devices for arbitrary geometry and operating conditions. By including the coupling of electrons to both photons and phonons, the theory is able to provide a microscopic picture of indirect generation, carrier relaxation, and inter-well transport mechanisms beyond the ballistic regime.

Free-Standing Bilayered Nanoparticle Superlattice Nanosheets with Asymmetric Ionic Transport Behaviors.

Science.gov (United States)

Rao, Siyuan; Si, Kae Jye; Yap, Lim Wei; Xiang, Yan; Cheng, Wenlong

2015-11-24

Natural cell membranes can directionally and selectively regulate the ion transport, which is critical for the functioning of living cells. Here, we report on the fabrication of an artificial membrane based on an asymmetric nanoparticle superlattice bilayered nanosheet, which exhibits similar ion transport characteristics. The superlattice nanosheets were fabricated via a drying-mediated self-assembly of polystyrene-capped gold nanoparticles at the liquid-air interface. By adopting a layer-by-layer assembly process, an asymmetric nanomembrane could be obtained consisting of two nanosheets with different nanoparticle size. The resulting nanomembranes exhibit an asymmetric ion transport behavior, and diode-like current-voltage curves were observed. The asymmetric ion transport is attributed to the cone-like nanochannels formed within the membranes, upon which a simulation map was established to illustrate the relationship between the channel structure and the ionic selectivity, in consistency with our experimental results. Our superlattice nanosheet-based design presents a promising strategy for the fabrication of next-generation smart nanomembranes for rationally and selectively regulating the ion transport even at a large ion flux, with potential applications in a wide range of fields, including biosensor devices, energy conversion, biophotonics, and bioelectronics.

Quantum ratchets for quantum communication with optical superlattices

International Nuclear Information System (INIS)

Romero-Isart, Oriol; Garcia-Ripoll, Juan Jose

2007-01-01

We propose to use a quantum ratchet to transport quantum information in a chain of atoms trapped in an optical superlattice. The quantum ratchet is created by a continuous modulation of the optical superlattice which is periodic in time and in space. Though there is zero average force acting on the atoms, we show that indeed the ratchet effect permits atoms on even and odd sites to move along opposite directions. By loading the optical lattice with two-level bosonic atoms, this scheme permits us to perfectly transport a qubit or entangled state imprinted in one or more atoms to any desired position in the lattice. From the quantum computation point of view, the transport is achieved by a smooth concatenation of perfect swap gates. We analyze setups with noninteracting and interacting particles and in the latter case we use the tools of optimal control to design optimal modulations. We also discuss the feasibility of this method in current experiments

Optical properties of graphene superlattices

International Nuclear Information System (INIS)

Le, H Anh; Do, V Nam; Ho, S Ta; Nguyen, D Chien

2014-01-01

In this work, the optical responses of graphene superlattices, i.e. graphene subjected to a periodic scalar potential, are theoretically reported. The optical properties were studied by investigating the optical conductivity, which was calculated using the Kubo formalism. It was found that the optical conductivity becomes dependent on the photon polarization and is suppressed in the photon energy range of (0, U b ), where U b is the potential barrier height. In the higher photon energy range, i.e. Ω > U b , the optical conductivity is, however, almost identical to that of pristine graphene. Such behaviors of the optical conductivity are explained microscopically through the analysis of the elements of optical matrices and effectively through a simple model, which is based on the Pauli blocking mechanism. (paper)

Phase diagrams of a spin-1 Ising superlattice with alternating transverse field

International Nuclear Information System (INIS)

Saber, A.; Ez-Zahraouy, H.; Lo Russo, S.; Mattei, G.; Ainane, A.

2003-01-01

The effects of alternating transverse fields Ω a and Ω b on the critical behavior of an alternating spin-1 Ising superlattice are studied within an effective field theory with a probability distribution technique that accounts for the single-site spin correlation. Critical temperatures are calculated as a function of the thickness of the superlattice and the strength of the transverse field. Depending on the values of the transverse fields Ω a and Ω b , the critical temperature can increase or decrease with increasing the thickness of the film, such result is not obtained in the uniform transverse field case (Ω a = Ω b ). Furthermore, for each thickness L of the film, a long range ordered phase persist at low temperature for selected values of the transverse field Ω a and arbitrary values of Ω b . The effects of interlayer and intralayer exchange interactions are also examined

Phase diagrams of a spin-1 Ising superlattice with alternating transverse field

International Nuclear Information System (INIS)

Saber, A.; Ez-Zahraouy, H.

2000-09-01

The effects of alternating transverse fields Ω a and Ω b on the critical behavior of an alternating spin-1 Ising superlattice are studied within an effective field theory with a probability distribution technique that accounts for the single-site spin correlations. Critical temperatures are calculated as a function of the thickness of the superlattice and the strength of the transverse field. Depending on the values of the transverse fields Ω a and Ω b , the critical temperature can increase or decrease with increasing the thickness of the film, such result is not obtained in the uniform transverse field case (Ω a = Ω b ). Furthermore, for each thickness L of the film, a long range ordered phase persists at low temperature for selected values of the transverse field Ω a and arbitrary values of Ω b . The effects of interlayer and intralayer exchange interactions are also examined. (author)

Microwave properties of YBa2Cu3O7-δ/PrBa2Cu3O7-δ superlattices

International Nuclear Information System (INIS)

Carlos, W.E.; Kaplan, R.; Lowndes, D.H.; Norton, D.P.

1992-01-01

We have used non-resonant microwave absorption to study c-axis YBa 2 Cu 3 O 7-δ /PrBa 2 Cu 3 O 7-δ superlattices and compare the response to a film of similarly grown YBa 2 Cu 3 O 7-δ (YBCO). Near the respective transition temperatures, the response of the superlattice samples and the YBCO film have similar amplitudes and orientation dependences. This is consistent with the microwave loss being related to magnetic flux penetration at (110) slip planes. At lower temperatures, the response of the superlattices is much stronger than that of the YBCO film and, while both responses are hysteretic at low temperatures, the widths of the hysteresis have opposite orientation dependences, which we attribute to the role of the PrBa 2 Cu 3 O 7-δ layers. (orig.)

Transport properties of YBa2Cu3O7/PrBa2Cu3O7 superlattices

International Nuclear Information System (INIS)

Jakob, G.; Hahn, T.; Stoelzel, C.; Tome-Rosa, C.; Adrian, H.

1992-01-01

We investigated the transport properties of high-quality YBa 2 Cu 3 O 7 /PrBa 2 Cu 3 O 7 superlattices. The exceptional structural order of the superlattices resulted in satellite peaks up to the ninth order in X-ray diffraction diagrams and high Tc values. We find high superconducting critical transport current densities j c even for ultrafine modulated superlattices which proves the existence of nearly continuous YBa 2 Cu 3 O 7 layers. The activation energy U is found to be constant or to have a linear temperatures dependence over a wide temperature range. (orig.)

Bottom-up meets top-down: tailored raspberry-like Fe3O4-Pt nanocrystal superlattices.

Science.gov (United States)

Qiu, Fen; Vervuurt, René H J; Verheijen, Marcel A; Zaia, Edmond W; Creel, Erin B; Kim, Youngsang; Urban, Jeffrey J; Bol, Ageeth A

2018-03-29

Supported catalysts are widely used in industry and can be optimized by tuning the composition, chemical structure, and interface of the nanoparticle catalyst and oxide support. Here we firstly combine a bottom up colloidal synthesis method with a top down atomic layer deposition (ALD) process to achieve a raspberry-like Pt-decorated Fe3O4 (Fe3O4-Pt) nanoparticle superlattices. This nanocomposite ensures the precision of the catalyst/support interface, improving the catalytic efficiency of the Fe3O4-Pt nanocomposite system. The morphology of the hybrid nanocomposites resulting from different cycles of ALD was monitored by scanning transmission electron microscopy, giving insight into the nucleation and growth mechanism of the ALD process. X-ray photoelectron spectroscopy studies confirm the anticipated electron transfer from Fe3O4 to Pt through the nanocomposite interface. Photocurrent measurement further suggests that Fe3O4 superlattices with controlled decoration of Pt have substantial promise for energy-efficient photoelectrocatalytic oxygen evolution reaction. This work opens a new avenue for designing supported catalyst architectures via precisely controlled decoration of single component superlattices with noble metals.

Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range

International Nuclear Information System (INIS)

Pavelyev, D. G.; Vasilev, A. P.; Kozlov, V. A.; Koschurinov, Yu. I.; Obolenskaya, E. S.; Obolensky, S. V.; Ustinov, V. M.

2016-01-01

The electron transport in superlattices based on GaAs/AlAs heterostructures with a small number of periods (6 periods) is calculated by the Monte Carlo method. These superlattices are used in terahertz diodes for the frequency stabilization of quantum cascade lasers in the range up to 4.7 THz. The band structure of superlattices with different numbers of AlAs monolayers is considered and their current–voltage characteristics are calculated. The calculated current–voltage characteristics are compared with the experimental data. The possibility of the efficient application of these superlattices in the THz frequency range is established both theoretically and experimentally.

Development of Strained-Layer Superlattice (SLS) IR Detector Camera Project

Data.gov (United States)

National Aeronautics and Space Administration — Strained Layer Superlattice (SLS) detectors are a new class of detectors which may be the next generation of band-gap engineered, large format infrared detector...

Electronic structure of silicon superlattices

International Nuclear Information System (INIS)

Krishnamurthy, S.; Moriarty, J.A.

1984-01-01

Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

Semiconductor Nonlinear Dynamics Study by Broadband Terahertz Spectroscopy

Science.gov (United States)

Ho, I.-Chen

Semiconductor nonlinearity in the terahertz (THz) frequency range has been attracting considerable attention due to the recent development of high-power semiconductor-based nanodevices. However, the underlying physics concerning carrier dynamics in the presence of high-field THz transients is still obscure. This thesis introduces an ultrafast, time-resolved THz pump/THz probe approach to the study of semiconductor properties in the nonlinear regime. The carrier dynamics regarding two mechanisms, intervalley scattering and impact ionization, is observed for doped InAs on a sub-picosecond time scale. In addition, polaron modulation driven by intense THz pulses is experimentally and theoretically investigated. The observed polaron dynamics verifies the interaction between energetic electrons and a phonon field. In contrast to previous work which reports optical phonon responses, acoustic phonon modulations are addressed in this study. A further understanding of the intense field interacting with solid materials will accelerate the development of semiconductor devices. This thesis starts with the design and performance of a table-top THz spectrometer which has the advantages of ultra-broad bandwidth (one order higher bandwidth compared to a conventional ZnTe sensor) and high electric field strength (>100 kV/cm). Unlike the conventional THz time-domain spectroscopy, the spectrometer integrates a novel THz air-biased-coherent-detection (THz-ABCD) technique and utilizes selected gases as THz emitters and sensors. In comparison with commonly used electro-optic (EO) crystals or photoconductive (PC) dipole antennas, the gases have the benefits of no phonon absorption as existing in EO crystals and no carrier life time limitation as observed in PC dipole antennas. The newly development THz-ABCD spectrometer with a strong THz field strength capability provides a platform for various research topics especially on the nonlinear carrier dynamics of semiconductors. Two mechanisms

Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

Science.gov (United States)

Yusuf, Mohammed; Du, Xu; Dawber, Matthew

2013-03-01

Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

Type II superlattice technology for LWIR detectors

Science.gov (United States)

Klipstein, P. C.; Avnon, E.; Azulai, D.; Benny, Y.; Fraenkel, R.; Glozman, A.; Hojman, E.; Klin, O.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nitzani, M.; Shtrichman, I.; Rappaport, N.; Snapi, N.; Weiss, E.; Tuito, A.

2016-05-01

SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD's new 15 μm pitch "Pelican-D LW" type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.

The electronic band parameters calculated by the Kronig-Penney method for Cd1-xZnxS quantum dot superlattices

International Nuclear Information System (INIS)

Sakly, A.; Safta, N.; Mejri, H.; Lamine, A. Ben

2009-01-01

This work reports on a theoretical study of superlattices based on Cd 1-x Zn x S quantum dots embedded in an insulating material. We show, in particular, how this system can be assumed to a series of flattened cylindrical quantum dots with a finite barrier height at the boundary. In this paper, are also reviewed the approximations needed to calculate the band edges of the Cd 1-x Zn x S superlattices with use of the Kronig-Penney model. The electronic states and the electron effective masses of both Γ 1 - and Γ 2 -minibands have been computed as a function of zinc composition for different inter-quantum dot separations. As is found, the CdS system is appropriate to give rise a superlattice behavior for conduction electrons in a relatively large range of inter-sheet separations. An attempt to explain the electron band parameters calculated will be presented.

Electronic structure and optical properties of (BeTen/(ZnSem superlattices

Directory of Open Access Journals (Sweden)

Caid M.

2016-03-01

Full Text Available The structural, electronic and optical properties of (BeTen/(ZnSem superlattices have been computationally evaluated for different configurations with m = n and m≠n using the full-potential linear muffin-tin method. The exchange and correlation potentials are treated by the local density approximation (LDA. The ground state properties of (BeTen/(ZnSem binary compounds are determined and compared with the available data. It is found that the superlattice band gaps vary depending on the layers used. The optical constants, including the dielectric function ε(ω, the refractive index n(ω and the refractivity R(ω, are calculated for radiation energies up to 35 eV.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Optical properties of metallic Fibonacci quasi-superlattice

International Nuclear Information System (INIS)

Feng Weiguo; Liu Nianhua; Wu Xiang

1990-06-01

Within the approximation of hydrodynamic model, the optical properties of the metallic Fibonacci quasi-superlattice have been studied for the region of s-polarized soft x-rays and extreme ultraviolet. By using the transfer-matrix method and taking account of damping effects, we have discussed the electromagnetic normal modes for the quasisuperlattice in the rational approximation. The related dispersion curves explain the reflection spectra well, and we found that similar to the reflectivities, both real part and imagine part of the dispersion relation pattern has a rich structure of self-similarity. With the increasing of the generation number, the electromagnetic modes all become critical. (author). 13 refs, 3 figs

Effect of retardation on the reflectance properties of the metallic Fibonacci quasi-superlattice

International Nuclear Information System (INIS)

Feng Weiguo; Yao Hesheng; Xu Xiang

1989-12-01

Based on the hydrodynamic model theory and the transfer matrix method, we have re-examined the reflection properties by taking account of the retardation effect to the system of the metallic Fibonacci quasi-superlattice. For the normal incident S-polarized Soft X-rays and extreme ultraviolet, we find that the self-similar reflecting spectrum will be restrained with the increasing of the retardation, but for the higher frequency region or at the smaller grazing angle, the self similarity will still exist for the lower generation quasi-superlattice. (author). 19 refs, 2 figs, 1 tab

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

Formation mechanism of gas bubble superlattice in UMo metal fuels: Phase-field modeling investigation

Energy Technology Data Exchange (ETDEWEB)

Hu, Shenyang, E-mail: shenyang.hu@pnnl.gov; Burkes, Douglas E.; Lavender, Curt A.; Senor, David J.; Setyawan, Wahyu; Xu, Zhijie

2016-10-15

Nano-gas bubble superlattices are often observed in irradiated UMo nuclear fuels. However, the formation mechanism of gas bubble superlattices is not well understood. A number of physical processes may affect the gas bubble nucleation and growth; hence, the morphology of gas bubble microstructures including size and spatial distributions. In this work, a phase-field model integrating a first-passage Monte Carlo method to investigate the formation mechanism of gas bubble superlattices was developed. Six physical processes are taken into account in the model: 1) heterogeneous generation of gas atoms, vacancies, and interstitials informed from atomistic simulations; 2) one-dimensional (1-D) migration of interstitials; 3) irradiation-induced dissolution of gas atoms; 4) recombination between vacancies and interstitials; 5) elastic interaction; and 6) heterogeneous nucleation of gas bubbles. We found that the elastic interaction doesn’t cause the gas bubble alignment, and fast 1-D migration of interstitials along 〈110〉 directions in the body-centered cubic U matrix causes the gas bubble alignment along 〈110〉 directions. It implies that 1-D interstitial migration along [110] direction should be the primary mechanism of a fcc gas bubble superlattice which is observed in bcc UMo alloys. Simulations also show that fission rates, saturated gas concentration, and elastic interaction all affect the morphology of gas bubble microstructures.

Structural simulation of superlattices in lithium aluminates; Simulacion estructural de superredes en aluminatos de litio

Energy Technology Data Exchange (ETDEWEB)

Carrera G, L.M.; Basurto S, R. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

1997-07-01

Among the materials to be used on the tritium generator cover of the future fusion reactors the lithium aluminate ({gamma} - LiAlO{sub 2}) is one of the more studied. In this work it is presented the superlattice structural simulation that presents to {gamma} - LiAlO{sub 2} as main phase and to {alpha} - LiAlO{sub 2} as the secondary phase. The simulation is developed considering that as the two phases present different symmetry ({gamma} - LiAlO{sub 2} is tetrahedral and {alpha} - LiAlO{sub 2} is hexahedral) it is had a superlattice LUCS type (Layered Ultrathin Coherent Structure) that is it presents an structure in coherent ultrathin layers since it is what implicates a lesser energy of formation. (Author)

Superconducting superlattices. Les super reseaux de supraconducteurs

Energy Technology Data Exchange (ETDEWEB)

Triscone, J M; Fischer, O [Geneva Univ. (Switzerland)

1993-03-01

By piling up ultra-thin layers of discrete materials, physicists now have a choice method for the study of superconductivity at high temperature. These superlattices are prepared by successive layers of YBaCuO and PrBaCuO deposited by cathode sputtering to study the variation of superconductivity with layer thickness. The transition temperature decreases rapidly when the distance between two layers increases. Current vortices are created, without a magnetic field, widening the transition temperature. The variation of resistivity near critical temperature in a magnetic field shows that the energy required to displace vortices is increasing with the thickness of the YBaCuO layer, with thin layers anisotropy is high and energy dissipation is important. (G.R.). refs., figs.

Strain distribution and band structure of InAs/GaAs quantum ring superlattice

Science.gov (United States)

Mughnetsyan, Vram; Kirakosyan, Albert

2017-12-01

The elastic strain distribution and the band structure of InAs/GaAs one-layer quantum ring superlattice with square symmetry has been considered in this work. The Green's function formalism based on the method of inclusions has been implied to calculate the components of the strain tensor, while the combination of Green's function method with the Fourier transformation to momentum space in Pikus-Bir Hamiltonian has been used for obtaining the miniband energy dispersion surfaces via the exact diagonalization procedure. The dependencies of the strain tensor components on spatial coordinates are compared with ones for single quantum ring and are in good agreement with previously obtained results for cylindrical quantum disks. It is shown that strain significantly affects the miniband structure of the superlattice and has contribution to the degeneracy lifting effect due to heavy hole-light hole coupling. The demonstrated method is simple and provides reasonable results for comparatively small Hamiltonian matrix. The obtained results may be useful for further investigation and construction of novel devices based on quantum ring superlattices.

The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

International Nuclear Information System (INIS)

Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

2013-01-01

The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

Electronic band structure of magnetic bilayer graphene superlattices

International Nuclear Information System (INIS)

Pham, C. Huy; Nguyen, T. Thuong; Nguyen, V. Lien

2014-01-01

Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

Future device applications of low-dimensional carbon superlattice structures

Science.gov (United States)

Bhattacharyya, Somnath

2005-03-01

We observe superior transport properties in low-dimensional amorphous carbon (a-C) and superlattice structures fabricated by a number of different techniques. Low temperature conductivity of these materials is explained using argument based on the crossover of dimensionality of weak localization and electron-electron interactions along with a change of sign of the magneto-resistance. These trends are significantly different from many other well characterized ordered or oriented carbon structures, and, show direct evidence of high correlation length, mobility and an effect of the dimensionality in low-dimensional a-C films. We show routes to prepare bespoke features by tuning the phase relaxation time in order to make high-speed devices over large areas. The artificially grown multi-layer superlattice structures of diamond-like amorphous carbon films show high-frequency resonance and quantum conductance suggesting sufficiently high values of phase coherence length in the present disordered a-C system that could lead to fast switching multi-valued logic.

Optical transmission through multi-component generalized Thue-Morse superlattices

Energy Technology Data Exchange (ETDEWEB)

Zhang Guogang [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, South China Normal University, Guangzhou 510631 (China); Yang Xiangbo, E-mail: xbyang@scnu.edu.c [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, South China Normal University, Guangzhou 510631 (China); Li Yuhong; Song Huanhuan [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, South China Normal University, Guangzhou 510631 (China)

2010-09-01

In this paper, by the three kinds of basic components (BCs) of three-component Thue-Morse (3CTM) sequence we construct a type of interesting optical basic-structural-units (BSUs) and propose multi-component generalized Thue-Morse (mCGTM) model. Based on the conventional electromagnetic wave theory we investigate the optical transmission vertically through the one-dimensional (1D) mCGTM superlattices. It is found that the optical transmission possesses an interesting pseudo-constant characteristic at the central wavelength. mCGTM sequence exhibits a cantor-set structure which results in the system possessing certain kinds of effective component pairs (ECPs), and each kind of ECP brings about certain contribution towards the optical transmission. The cantor-set structure is the reason that mCGTM multilayers exhibit the optical transmission pseudo-constant property. For the pseudo-constant optical transmission of mCGTM superlattices, there would be a potential application in the designing of some complex optical devices.

Comparison of the Cc and R3c space groups for the superlattice phase of Pb(Zr0.52Ti0.48)O3

International Nuclear Information System (INIS)

Ranjan, Rajeev; Singh, Akhilesh Kumar; Ragini; Pandey, Dhananjai

2005-01-01

Recent controversy about the space group of the low temperature superlattice phase of Pb(Zr 0.52 Ti 0.48 )O 3 is settled. It is shown that the R3c space group for the superlattice phase cannot correctly account for the peak positions of the superlattice reflections present in the neutron diffraction patterns. The correct space group is reconfirmed to be Cc. A comparison of the atomic coordinates of Cc and Cm space groups is also presented to show that in the absence of superlattice reflections, as is the case with x-ray diffraction data, one would land up in the Cm space group. This superlattice phase is found to coexist with another monoclinic phase of the Cm space group

Solid spectroscopy: semiconductors

International Nuclear Information System (INIS)

Silva, C.E.T.G. da

1983-01-01

Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

Fe/V and Fe/Co (0 0 1) superlattices: growth, anisotropy, magnetisation and magnetoresistance

International Nuclear Information System (INIS)

Nordblad, P.; Broddefalk, A.; Mathieu, R.; Blomqvist, P.; Eriksson, O.; Waeppling, R.

2003-01-01

Some physical properties of BCC Fe/V and Fe/Co (0 0 1) superlattices are reviewed. The dependence of the magnetic anisotropy on the in-plane strain introduced by the lattice mismatch between Fe and V is measured and compared to a theoretical derivation. The dependence of the magnetic anisotropy (and saturation magnetisation) on the layer thickness ratio Fe/Co is measured and a value for the anisotropy of BCC Co is derived from extrapolation. The interlayer exchange coupling of Fe/V superlattices is studied as a function of the V layer thickness (constant Fe thickness) and layer thickness of Fe (constant V thickness). A region of antiferromagnetic coupling and GMR is found for V thicknesses 12-14 monolayers. However, surprisingly, a 'cutoff' of the antiferromagnetic coupling and GMR is found when the iron layer thickness exceeds about 10 monolayers

The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

International Nuclear Information System (INIS)

Aydin, M. E.

2008-01-01

n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

Coherent dynamics of interwell excitons in GaAs/AlxGa1-xAs superlattices

DEFF Research Database (Denmark)

Mizeikis, V.; Birkedal, Dan; Langbein, Wolfgang Werner

1997-01-01

Coherent exciton dynamics in a GaAs/AlxGa1-xAs narrow-miniband superlattice is studied by spectrally resolved transient four-wave mixing. Coherent optical properties of the investigated structure are found to be strongly affected by the existence of two different heavy-hole excitonic states. One...

Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlattices

NARCIS (Netherlands)

Walravens, Willem; De Roo, Jonathan; Drijvers, Emile; Ten Brinck, Stephanie; Solano, Eduardo; Dendooven, Jolien; Detavernier, Christophe; Infante, Ivan; Hens, Zeger

2016-01-01

Two dimensional superlattices of epitaxially connected quantum dots enable size-quantization effects to be combined with high charge carrier mobilities, an essential prerequisite for highly performing QD devices based on charge transport. Here, we demonstrate that surface active additives known to

The hyperfine properties of a hydrogenated Fe/V superlattice

Energy Technology Data Exchange (ETDEWEB)

Elzain, M., E-mail: elzain@squ.edu.om; Al-Barwani, M.; Gismelseed, A.; Al-Rawas, A.; Yousif, A.; Widatallah, H.; Bouziane, K.; Al-Omari, I. [Sultan Qaboos University, Department of Physics, College of Science (Oman)

2012-03-15

We study the effect of hydrogen on the electronic, magnetic and hyperfine structures of an iron-vanadium superlattice consisting of three Fe monolayers and nine V monolayers. The contact charge density ({rho}), the contact hyperfine field (B{sub hf}) and the electronic field gradient (EFG) at the Fe sites for different H locations and H fillings are calculated using the first principle full-potential linear-augmented-plane-wave (FP-LAPW) method. It is found that sizeable changes in the hyperfine properties are obtained only when H is in the interface region.

Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

International Nuclear Information System (INIS)

Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

2011-01-01

We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

Study on guided waves in semiconductor lasers

International Nuclear Information System (INIS)

Pudensi, M.A.A.

1980-01-01

In This work we studied the guided waves in semiconductor lasers. In the first part we carried on the experimental measurements on lasers with stripe nonorthogonal to the mirrors. In the second part we developed a matrix method for the study of propagation and reflection of guided waves in lasers. (author) [pt

Superconducting properties and microstructure of YBa2Cu3O7-δ/PrBa2Cu3O7-δ superlattices

International Nuclear Information System (INIS)

Lowndes, D.H.; Norton, D.P.; Zheng, X.Y.; Zhu, Shen

1991-10-01

Epitaxial YBa 2 Cu 3 O 7-δ /PrBa 2 Cu 3 O 7-δ (YBCO/PBCO) superlattices are tools for systematic, fundamental studies of high-temperature superconductivity. The variation of T c in YBCO/PBCO superlattices can be understood as arising from changes in the interlayer phase coupling between YBCO layers that are highly two-dimensional when they are very thin (∼1--2 c-axis unit cells) and completely isolated from each other. Single-cell-thick YBCO layers, containing isolated pairs of CuO 2 planes, are found to be superconducting at T c ∼ 20 K, in a PBCO matrix. The resistance in the superconducting transition region scales with temperature as expected for the (flux flow) resistance produced by thermally generated 2D vortices, or for a 2D array of superconducting weak links. Relative to both thin-film and single-crystal HTSc specimens, the thin superconducting layers in YBCO/PBCO superlattices exhibit a greatly expanded temperature range over which characteristic 2D dissipation can be observed, as a consequence of the enhanced anisotropy and reduced dimensionality of the YBCO layers. Scanning tunneling microscope studies reveal that YBCO films and YBCO/PBCO superlattices grow unit cell-by-unit cell by a terraced-island growth mechanism. On miscut, near-(001) substrates the terraces are epitaxially aligned with the substrate crystal lattice and spiral growth structures (screw dislocation-mediated growth) are not seen. These observations explain the steps or ''kinks'' that are seen in cross-section Z-contrast TEM images of YBCO/PBCO superlattices. The kinks may correspond physically to regions where the supercurrent must tunnel along the c- axis, and thus may be weak-link barriers. 31 refs., 7 figs

Application of positron annihilation techniques for semiconductor studies

International Nuclear Information System (INIS)

Karwasz, G.P.; Zecca, A.; Brusa, R.S.; Pliszka, D.

2004-01-01

Positron annihilation techniques, being non-destructive, allowing depth profiling down to a few micrometers and detecting open-volume defects (vacancies, dislocations etc.) at single ppm concentrations constitute a valuable and complementary method, compared to other solid-state-physics studies. We give examples of investigation in the field of semiconductors with different techniques, both with and without use of positron low-energy beams. The Doppler broadening of the 511 keV annihilation line method and the slow positron beam were used to study helium-implanted silicon and the surface reduction processes in semiconducting glasses. The positron lifetime technique and coincidence spectra of the Doppler broadening were used for systematic studies of metals and semiconductors. Doppler-coincidence method was then used to identify the kinetics of oxygen precipitates in Czochralski-grown silicon

Direct-substitution method for studying second harmonic generation in arbitrary optical superlattices

Directory of Open Access Journals (Sweden)

Ying Chen

Full Text Available In this paper, we present the direct-substitution (DS method to study the second-harmonic generation (SHG in arbitrary one-dimensional optical superlattices (OS. Applying this method to Fibonacci and generalized Fibonacci systems, we obtain the relative intensity of SHG and compare them with previous works. We confirmed the validity of the proposed DS method by comparing our results of SHG in quasiperiodic Fibonacci OS with previous works using analytical Fourier transform method. Furthermore, the three-dimension SHG spectra obtained by DS method present the properties of SHG in Fibonacci OS more distinctly. What’s more important, the DS method demands very few limits and can be used to compute directly and conveniently the intensity of SHG in arbitrary OS where the quasi-phase-matching (QPM can be achieved. It shows that the DS method is powerful for the calculation of electric field and intensity of SHG and can help experimentalists conveniently to estimate the distributions of SHG in any designed polarized systems. Keywords: Second-harmonic generation, Direct-substitution, Fibonacci

FY 1991 Report on the results of the researches on nonlinear photoelectronic materials; 1991 nendo hisenkei hikari denshi zairyo no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1992-03-01

The nonlinear optics with light-light conversion and electro-optical effects are expected to be the optical materials of the next generation for their functions of, e.g., conversion of the infrared laser beams into visual light, and optical switching. The efforts are directed to development of the procedures for exploring and designing various raw materials, and technologies for synthesizing the raw materials and for producing and evaluating the materials, in order to develop highly nonlinear, high-speed responding materials. Three areas are studied; for the organic materials, the chiral nonlinear effects are demonstrated and the new procedure for determining electrical susceptibility ({gamma}) is developed; for the dispersed materials, highly nonlinear susceptibility of glass dispersed with fine particles of semiconductors, e.g., CuCl, is realized, and possibility of controlled dispersion of fine semiconductor particles in an organic polymer is established; and for development of the superlattice-based materials, the layered structures of thin organic superlattice films are studied, the thin semiconductor films of high purity and little defects are prepared, and development of the three-dimensional structures is started. The individual researches are conducted, 3 for the organic materials, 4 for the dispersed materials, and 2 for the superlattice-based materials. The targets of susceptibility and response are 10{sup -8}esu or more and 10ps or less, respectively. (NEDO)

Modified electron beam induced current technique for in(Ga)As/InAsSb superlattice infrared detectors

Science.gov (United States)

Yoon, N.; Reyner, C. J.; Ariyawansa, G.; Duran, J. M.; Scheihing, J. E.; Mabon, J.; Wasserman, D.

2017-08-01

Electron beam induced current (EBIC) measurements provide a powerful tool for characterizing semiconductor based materials and devices. By measuring the current generated by the electron beam of a scanning electron microscope (SEM), EBIC allows us to extract the minority carrier diffusion length (L) and the surface recombination velocity to diffusivity ratio (S/D) of a material. When combined with information on minority carrier lifetime (τ), for instance from time-resolved photoluminescence measurements, the minority carrier mobility of the material can be extracted. However, the EBIC technique relies heavily on the accurate modeling of the carrier generation and collection process. Traditionally, this was achieved using a combination of empirical analytical expressions (and later Monte Carlo simulations) for carrier generation and analytical diffusion/recombination expressions for carrier collection. This approach introduces significant uncertainties into the extracted material parameters. Here, we present a numerical approach to EBIC modeling which improves the spatial resolution of our model, while also retaining information regarding the relative EBIC signal as a function of incident beam energies and currents. We apply this technique to investigate the temperature dependent minority carrier mobility of InAs/InAsSb and InGaAs/InAsSb strained layer superlattice infrared detectors and compare our results to the values obtained using external quantum efficiency measurements of the same samples. Our approach not only allows for an improvement in the uncertainty of the extracted material parameters, but also offers insight into the material and device behavior as a function of nonequilibrium carrier concentration. The technique presented here offers potentially improved characterization of not only infrared detectors, but a range of semiconductor-based devices.

Stability and electronic structure of superlattices (IIIV)n/(IV2)n

International Nuclear Information System (INIS)

Casagrande, D.; Ferraz, A.C.

1996-01-01

Theoretical investigations of atomic relaxation and electronic states have been made for ultrathin superlattices (GaP) n /(Ge 2 ) n , (GaP) n /(Si 2 ) n , (In P) n /(Ge 2 ) n and (In P) n /(Si 2 ) n with period n ≤ 3 in growth directions (001) and (110). The calculations were performed within the momentum-space formalism of the self-consistent ab-initio pseudopotential method and the molecular dynamics approach as proposed by Car and Parrinello. The structures were found to be unstable with respect to the phase separation into the constituent bulk materials. The results for the enthalpy show a metastability as increasing the superlattice period n. The density of nonoctet wrong-bonds play an important role to determine the stability of the structures. (author). 13 refs., 2 figs., 3 tabs

Implanted muon study of superlattice ordering in palladium hydride PdH/sub 0. 64/

Energy Technology Data Exchange (ETDEWEB)

Cox, S F.J.; Ross, D K; Witchell, D; Hartmann, O; Hempelmann, R; Richter, D; Stoneham, A M

1986-12-01

The superlattice ordering transition in PdH/sub 0.64/ is detected by implanted muon spectroscopy. The temperature dependence around 50 K of the static ..mu..SR depolarisation rate, measured in low transverse magnetic field in a polycrystalline sample, indicates appropriate changes in the average number of nearest neighbour protons. These measurements establish the similarity of the proton-proton and muon-proton interactions within the interstitial lattice. The implanted muons reveal the onset of short range order as the transition is approached and, to the extent that vacancy sites are available, participate in the predicted structure below the critical temperature.

Sodium effect on self-organization of amphiphilic carboxylates: formation of structured micelles and superlattices.

Science.gov (United States)

Rosenlehner, Karin; Schade, Boris; Böttcher, Christoph; Jäger, Christof M; Clark, Timothy; Heinemann, Frank W; Hirsch, Andreas

2010-08-16

Not only the self-aggregation of dendritic polycarboxylates into structurally persistent micelles, but also that of the micelles themselves into superlattices is controlled by alkali-metal counterions and shows a pronounced sodium effect. Our combined experimental and computational work has revealed the formation of superlattices for the first time. The behavior of a variety of amphiphilic carboxylates and the different effects of the alkali cations Li(+), Na(+), and K(+) have been investigated by conductivity measurements, cryogenic transmission electron microscopy (cryo-TEM), and molecular-dynamics (MD) simulations. Together, these show that sodium salts of the amphiphiles give the most stable micelles, followed by lithium and potassium. Our results suggest that ion multiplets in bridging positions, rather than contact ion pairs, are responsible for the enhanced stability and the formation of hexagonally ordered superlattices with sodium counterions. Potassium ions do not form such ion multiplets and cannot therefore induce aggregation of the micelles. This sodium effect has far-reaching consequences for a large number of biological and technical systems and sheds new light on the origin of specific-ion effects.

Formation of uniform magnetic structures and epitaxial hydride phases in Nd/Pr superlattices

DEFF Research Database (Denmark)

Goff, J.P.; Bryn-Jacobsen, C.; McMorrow, D.F.

1997-01-01

, and that the stacking sequence is coherent over many bilayer repeats. The neutron measurements show that for the hexagonal sites of the dhcp structure, the Nd magnetic order propagates coherently through the Pr, whereas the order on the cubic sites is either suppressed or confined to single Nd blocks. It is also shown...... that the singlet ground state of Pr is perturbed to produce a local moment on the hexagonal sites, so that in some cases there is a uniform magnetic structure throughout the superlattice. These results cast new light on the theory of magnetic interactions in rare-earth superlattices. Within a few months of growth...

Direct solar pumping of semiconductor lasers: A feasibility study

Science.gov (United States)

Anderson, Neal G.

1992-01-01

This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

Critical properties of a ferroelectric superlattice described by a transverse spin-1/2 Ising model

International Nuclear Information System (INIS)

Tabyaoui, A; Saber, M; Baerner, K; Ainane, A

2007-01-01

The phase transition properties of a ferroelectric superlattice with two alternating layers A and B described by a transverse spin-1/2 Ising model have been investigated using the effective field theory within a probability distribution technique that accounts for the self spin correlation functions. The Curie temperature T c , polarization and susceptibility have been obtained. The effects of the transverse field and the ferroelectric and antiferroelectric interfacial coupling strength between two ferroelectric materials are discussed. They relate to the physical properties of antiferroelectric/ferroelectric superlattices

Interwell and intrawell magnetoexcitons in GaAs/AlGaAs superlattices

DEFF Research Database (Denmark)

Timofeev, V. B.; Filin, A. I.; Tartakovskii, A. I.

1997-01-01

The formation of spatially indirect (interwell) excitons in superlattices (SLs) with different barrier widths (different tunneling coupling) is experimentally investigated in a strong enough magnetic field with the use of photoluminescence (PL), photoluminescence excitation (PLE), reflectance spec...

Compound Semiconductor Radiation Detector

International Nuclear Information System (INIS)

Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

2005-01-01

In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

Superlattice structure of Ce{sup 3+}-doped BaMgF{sub 4} fluoride crystals - x-ray diffraction, electron spin-resonance, and optical investigations

Energy Technology Data Exchange (ETDEWEB)

Yamaga, M.; Hattori, K. [Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, Gifu (Japan); Kodama, N. [Department of Materials Science and Engineering, Faculty of Engineering and Resource Science, Akita University, Akita (Japan); Ishizawa, N. [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Honda, M. [Faculty of Science, Naruto University of Education, Naruto (Japan); Shimamura, K.; Fukuda, T. [Institute for Materials Research, Tohoku University, Sendai (Japan)

2001-09-14

The x-ray diffraction patterns for Ce{sup 3+}-doped BaMgF{sub 4} (BMF) crystals suggest the existence of superlattice structure. The superlattice model is consistent with the characterization of the 4f{sup 1} ground state of Ce{sup 3+} as a probe ion using the electron spin-resonance (ESR) technique. The distinct Ce{sup 3+} luminescence spectra with different peak energies and lifetimes also support the superlattice model. Although the detailed superlattice structure could not be analysed using the diffraction spots, a model has been proposed, taking into account the eight Ce{sup 3+} polyhedra with different anion coordinations in the unit cell of the BMF crystal obtained from the ESR experiments. (author)

Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

Science.gov (United States)

Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

2016-05-01

The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

Crack-tips enriched platinum-copper superlattice nanoflakes as highly efficient anode electrocatalysts for direct methanol fuel cells.

Science.gov (United States)

Zheng, Lijun; Yang, Dachi; Chang, Rong; Wang, Chengwen; Zhang, Gaixia; Sun, Shuhui

2017-07-06

We have developed "crack-tips" and "superlattice" enriched Pt-Cu nanoflakes (NFs), benefiting from the synergetic effects of "crack-tips" and "superlattice crystals"; the Pt-Cu NFs exhibit 4 times higher mass activity, 6 times higher specific activity and 6 times higher stability than those of the commercial Pt/C catalyst, respectively. Meanwhile, the Pt-Cu NFs show more enhanced CO tolerance than the commercial Pt/C catalyst.

[Study on Square Super-Lattice Pattern with Surface Discharge in Dielectric Barrier Discharge by Optical Emission Spectra].

Science.gov (United States)

Niu, Xue-jiao; Dong, Li-fang; Liu, Ying; Wang, Qian; Feng, Jian-yu

2016-02-01

Square super-lattice pattern with surface discharge consisting of central spots and dim spots is firstly observed in the mixture of argon and air by using a dielectric barrier discharge device with water electrodes. By observing the image, it is found that the central spot is located at the centriod of its surrounding four dim spots. The short-exposure image recorded by a high speed video camera shows that the dim spot results from the surface discharges (SDs). The brightness of the central spot and is quite different from that of the dim spot, which indicates that the plasma states of the central spot and the dim spot may be differentiated. The optical emission spectrum method is used to further study the several plasma parameters of the central spot and the dim spot in different argon content. The emission spectra of the N₂ second positive band (C³IIu --> B³ IIg) are measured, from which the molecule vibration temperatures of the central spot and the dim spot are calculated respectively. The broadening of spectral line 696.57 nm (2P₂-->1S₅) is used to study the electron densities of the central spot and the dim spot. It is found that the molecule vibration temperature and electron density of the dim spot are higher than those of the central spot in the same argon content The molecule vibration temperature and electron density of the central spot and the dim spot increase with the argon content increasing from 90% to 99.9%. The surface discharge induced by the volume discharge (VD) has the determinative effect on the formation of the dim spot The experimental results above play an important role in studying the formation mechanism of surface discharg&of square super-lattice pattern with surface discharge. In addition, the studies exert an influence on the application of surface discharge and volume discharge in different fields.

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

NARCIS (Netherlands)

Casarin, Barbara; Caretta, Antonio; Momand, Jamo; Kooi, Bart J.; Verheijen, Marcel A.; Bragaglia, Valeria; Calarco, Raffaella; Chukalina, Marina; Yu, Xiaoming; Robertson, John; Lange, Felix R. L.; Wuttig, Matthias; Redaelli, Andrea; Varesi, Enrico; Parmigiani, Fulvio; Malvestuto, Marco

2016-01-01

The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical

Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices

NARCIS (Netherlands)

Casarin, B.; Caretta, A.; Momand, J.; Kooi, B. J.; Verheijen, M.A.; Bragaglia, V.; Calarco, R.; Chukalina, M.; Yu, X.; Robertson, J.; Lange, F.R.L.; Wuttig, M.; Redaelli, A.; Varesi, E.; Parmigiani, F.; Malvestuto, M.

2016-01-01

The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical

Electronic properties of semiconductor heterostructures

International Nuclear Information System (INIS)

Einevoll, G.T.

1991-02-01

Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

Study of the inhomogeneous characteristics of modified YBa_2Cu_3O_7_-_d thin films and (YBa_2Cu_3O_7_-_d /LaAlO_3)_n superlattices: growth and properties

International Nuclear Information System (INIS)

Thimont, Yohann

2009-01-01

This manuscript is devoted to the study of crystallographic and physical properties of superconductor YBCO thin films and superconductor/insulator (YBCO/LAO)_n superlattices. The first stage of this work was to optimize the YBCO thin film deposition. Elaboration of a new physical model allows us to determine a critical temperature distribution inside the films thickness. Nevertheless, no homogeneous critical temperature inside the films can be obtained. This work shows that the interface strains modify the crystallographic and physical properties. We developed a new simulation method concerning the XRD peak shape analysis which allows us to determine YBCO cell deformation profile along the c-bar axis. About superlattices, effects of thickness on the physical and structural properties have been noticed. Transmission Electron Microscopy exhibits existence of structural defects in the films. Ending, the physical model proposed in the present work provides important information regarding the magnetic interaction between two superconductor layers, which seems to limit application of these superlattices in the realization of complex electronic devices. (author) [fr

Moiré superlattice-level stick-slip instability originated from geometrically corrugated graphene on a strongly interacting substrate

Science.gov (United States)

Shi, Ruoyu; Gao, Lei; Lu, Hongliang; Li, Qunyang; Ma, Tian-Bao; Guo, Hui; Du, Shixuan; Feng, Xi-Qiao; Zhang, Shuai; Liu, Yanmin; Cheng, Peng; Hu, Yuan-Zhong; Gao, Hong-Jun; Luo, Jianbin

2017-06-01

Two dimensional (2D) materials often exhibit novel properties due to various coupling effects with their supporting substrates. Here, using friction force microscopy (FFM), we report an unusual moiré superlattice-level stick-slip instability on monolayer graphene epitaxially grown on Ru(0 0 0 1) substrate. Instead of smooth friction modulation, a significant long-range stick-slip sawtooth modulation emerges with a period coinciding with the moiré superlattice structure, which is robust against high external loads and leads to an additional channel of energy dissipation. In contrast, the long-range stick-slip instability reduces to smooth friction modulation on graphene/Ir(1 1 1) substrate. The moiré superlattice-level slip instability could be attributed to the large sliding energy barrier, which arises from the morphological corrugation of graphene on Ru(0 0 0 1) surface as indicated by density functional theory (DFT) calculations. The locally steep humps acting as obstacles opposing the tip sliding, originates from the strong interfacial electronic interaction between graphene and Ru(0 0 0 1). This study opens an avenue for modulating friction by tuning the interfacial atomic interaction between 2D materials and their substrates.

Dynamic localization in finite quantum dot superlattices

International Nuclear Information System (INIS)

Madureira, Justino R.; Schulz, Peter A.; Maialle, Marcelo Z.

2004-01-01

Full text: The dynamic properties of electrons and holes in low dimensional systems, driven by ac fields, reveal exciting emergent phenomena in the time span around the turn of the century. Such a rich scenario has been established by the concurrent development of powerful theoretical analysis tools, design and realization of high quality nano structured devices, as well as of tunable microwave and T Hz ac field sources. These striking developments made possible the exploration of the interaction of T Hz fields with condensed matter, leading even to biological tissue imaging. Therefore, a microscopic understanding of the T Hz field effects on designed nano structures constitute an important framework for further developments. A very interesting example in this context is the prediction of dynamic localization, which has been a subject of intense research in the past few years, from both theoretical and experimental point of views. The initial prediction states that, within a single band tight-binding approximation, an initially localized particle will return to its initial state following the periodical evolution of a driving pure sinusoidal field. This phenomenon can be simply visualized by the related collapse of the quasi energy mini bands, i.e., the localization of electronic states of a periodic unidimensional structure in real space driven by a field periodic in time. Such collapses occur whenever the field intensity/frequency ratio, eaF/(h/2π)ω, is a root of the zero-order Bessel function of the first kind. The quest for experimental signatures of dynamic localization is an involved task, since a variety of perturbations to an ideal situation is always present in real systems. The question that has to be answered is how the dynamic localization, related to the quasi-energy mini band collapses, may be identified in a context where concurring effects also tend to modify the quasi-energy spectra. For semiconductor superlattices, dynamic localization has been

Rutile IrO2/TiO2 superlattices: A hyperconnected analog to the Ruddelsden-Popper structure

Science.gov (United States)

Kawasaki, Jason K.; Baek, David; Paik, Hanjong; Nair, Hari P.; Kourkoutis, Lena F.; Schlom, Darrell G.; Shen, Kyle M.

2018-05-01

Dimensionality and connectivity among octahedra play important roles in determining the properties, electronic structure, and phase transitions of transition-metal oxides. Here we demonstrate the epitaxial growth of (110)-oriented alternating layers of IrO2 and TiO2, both of which have the rutile structure. These (IrO2)n/(TiO2)2 superlattices consist of IrO6 and TiO6 octahedra tiled in a hyperconnected, edge- and corner-sharing network. Despite the large lattice mismatch between constituent layers (Δ d∥=-2.1 % and Δ c =+6.6 % ), our reactive molecular-beam epitaxy-grown superlattices show high structural quality as determined by x-ray diffraction and sharp interfaces as observed by transmission electron microscopy. The large strain at the interface is accommodated by an ordered interfacial reconstruction. The superlattices show persistent metallicity down to n =3 atomic layers, and angle-resolved photoemission spectroscopy measurements reveal quantized sub-bands with signatures of IrO2-IrO2 interlayer coupling.

Interfacial magnetic coupling in ultrathin all-manganite La0.7Sr0.3MnO3-TbMnO3 superlattices

KAUST Repository

Tian, Y. F.

2014-04-14

We report the growth and magnetic properties of all-manganite superlattices composed of ultrathin double-exchange ferromagnetic La0.7Sr0.3MnO3 and noncollinear multiferroic TbMnO3 layers. Spontaneous magnetization and hysteresis loops are observed in such superlattices with individual La0.7Sr0.3MnO3 layers as thin as two unit cells, which are accompanied by pronounced exchange bias and enhanced coercivity. Our results indicate substantial interfacial magnetic coupling between spin sublattices in such superlattices, providing a powerful approach towards tailoring the properties of artificial magnetic heterostructures.

Interfacial magnetic coupling in ultrathin all-manganite La0.7Sr0.3MnO3-TbMnO3 superlattices

KAUST Repository

Tian, Y. F.; Lebedev, O. I.; Roddatis, V. V.; Lin, W. N.; Ding, J. F.; Hu, S. J.; Yan, S. S.; Wu, Tao

2014-01-01

We report the growth and magnetic properties of all-manganite superlattices composed of ultrathin double-exchange ferromagnetic La0.7Sr0.3MnO3 and noncollinear multiferroic TbMnO3 layers. Spontaneous magnetization and hysteresis loops are observed in such superlattices with individual La0.7Sr0.3MnO3 layers as thin as two unit cells, which are accompanied by pronounced exchange bias and enhanced coercivity. Our results indicate substantial interfacial magnetic coupling between spin sublattices in such superlattices, providing a powerful approach towards tailoring the properties of artificial magnetic heterostructures.

Positron studies of metal-oxide-semiconductor structures

Science.gov (United States)

Au, H. L.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.

1993-03-01

Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.

Experimental study on the characteristics of semiconductor opening switch

CERN Document Server

Su Jian Cang; Ding Yong Zhong; Song Zhi Min; Ding Zhen Jie; Liu Guo Zhi

2002-01-01

An experimental set-up is developed to measure the characteristics of semiconductor opening switch (SOS). The parameters, such as interruption impedance, current int eruption time, voltage gain, pulse duration and energy transfer efficiency, are studied experimentally. The experimental results show that forward pumping time and reverse pumping time are important parameters for semiconductor opening switches. The influences of forward pumping time and reverse pumping time on interruption time, voltage gain, and energy transfer efficiency are obtained. In the interruption process, the impedance variation is divided into three phases: that is rapid increasing phase, slow change phase and completely interruption phase

Ferroic properties in bi-component perovskites: artificial superlattices and naturally forming compounds

International Nuclear Information System (INIS)

Saha-Dasgupta, T

2014-01-01

The use of four different metal cations in a bi-component perovskite ABO 3 structure with 50 : 50 substitution at A sublattice as well as B sublattice, opens up the door for materials designing, with the aim to improve ferroic properties. This can be achieved following two different routes; one using the concept of artificially grown superlattices with alternating layers of ABO 3 and A′B′O 3 perovskites in a periodic set-up and another, through synthesis of naturally grown bulk double perovskites with ordered arrangement of A and A′ cations, simultaneously with that of B and B′ cations. The tremendous progress in layered deposition techniques as well as advances in solid state chemistry methods, has made both routes equally plausible and an area of much activity. This review summarizes some of the recent progress in this field, with a special emphasis on two computational studies, (i) one on ultra-thin 1–1 superlattices built out of paraelectric and ferroelectric components, showing tunable piezoelectric properties, and (ii) another on CrOs-based double perovskites which show multiferroic behavior, achieved through layered ordering of A and A′ cations. (topical review)

Progress towards vertical transport study of proton-irradiated InAs/GaSb type-II strained-layer superlattice materials for space-based infrared detectors using magnetoresistance measurements

Science.gov (United States)

Malone, Mitchell C.; Morath, Christian P.; Fahey, Stephen; Klein, Brianna; Cowan, Vincent M.; Krishna, Sanjay

2015-09-01

InAs/GaSb type-II strained-layer superlattice (T2SLS) materials are being considered for space-based infrared detector applications. However, an inadequate understanding of the role of carrier transport, specifically the vertical mobility, in the radiation tolerance of T2SLS detectors remains. Here, progress towards a vertical transport study of proton-irradiated, p-type InAs/GaSb T2SLS materials using magnetoresistance measurements is reported. Measurements in the growth direction of square mesas formed from InAs/GaSb superlattice material were performed using two distinct contact geometries in a Kelvin mode setup at variable magnetic fields, ranging from -9 T to 9 T, and temperatures, ranging from 5 K and 300 K. The results here suggested multi-carrier conduction and a field-dependent series resistance from the contact layer were present. The implications of these results and the plans for future magnetoresistance measurements on proton-irradiated T2SLS materials are discussed.

Ferroelectricity driven magnetism at domain walls in LaAlO3/PbTiO3 superlattices

Science.gov (United States)

Zhou, P. X.; Dong, S.; Liu, H. M.; Ma, C. Y.; Yan, Z. B.; Zhong, C. G.; Liu, J. -M.

2015-01-01

Charge dipole moment and spin moment rarely coexist in single-phase bulk materials except in some multiferroics. Despite the progress in the past decade, for most multiferroics their magnetoelectric performance remains poor due to the intrinsic exclusion between charge dipole and spin moment. As an alternative approach, the oxide heterostructures may evade the intrinsic limits in bulk materials and provide more attractive potential to realize the magnetoelectric functions. Here we perform a first-principles study on LaAlO3/PbTiO3 superlattices. Although neither of the components is magnetic, magnetic moments emerge at the ferroelectric domain walls of PbTiO3 in these superlattices. Such a twist between ferroelectric domain and local magnetic moment, not only manifests an interesting type of multiferroicity, but also is possible useful to pursuit the electrical-control of magnetism in nanoscale heterostructures. PMID:26269322

Effect of disorders on topological phases in one-dimensional optical superlattices

International Nuclear Information System (INIS)

Wang Zhizhou; Wu Yidong; Du Huijing; Jing Xili

2016-01-01

In a recent paper, Lang et al. proposed that edge states and topological phases can be observed in one-dimensional optical superlattices. They showed that the topological phases can be revealed by observing the density profile of a trapped fermion system, which displays plateaus with their positions. However, disorders are not considered in their model. To study the effect of disorders on the topological phases, we introduce random potentials to the model for optical superlattcies. Our calculations show that edge states are robust against the disorders. We find the edge states are very sensitive to the number of the sites in the optical superlattice and we propose a simple rule to describe the relationship between the edge states and the number of sites. The density plateaus are also robust against weak disorders provided that the average density is calculated over a long interval. The widths of the plateaus are proportional to the widths of the bulk energy gaps when there are disorders. The disorders can diminish the bulk energy gaps. So the widths of the plateaus decrease with the increase of disorders and the density plateaus disappear when disorders are too strong. The results in our paper can be used to guide the experimental detection of topological phases in one-dimensional systems. (paper)

Electrocrystallization and scanning probe microscopy of ceramic thin films and superlattices

Science.gov (United States)

Hung, Chen-Jen

This dissertation presents an investigation of the electrocrystallization and scanning probe microscopy of ceramic thin films and superlattices. All of the films were deposited from aqueous solution at room temperature with no subsequent heat treatment needed to effect crystallization. Thallium(III) oxide defect chemistry superlattices were electrodeposited by pulsing the applied overpotential during deposition. The defect chemistry of the oxide is dependent on the applied overpotential. High overpotentials favor oxygen vacancies, while low overpotentials favor cation interstitials. Nanometer-scale holes were formed in thin thallium(III) oxide films using the scanning tunneling microscope in humid ambient conditions. Both cathodic and anodic etching reactions were performed on this metal oxide surface. The hole formation was attributed to localized electrochemical etching reactions beneath the STM tip. The scanning tunneling microscope (STM) was also used to both induce local surface modifications and image cleaved Pb-Tl-O superlattices. A trench of 100 nm in width, 32 nm in depth, and over 1 μm in length was formed after sweeping a bias voltage of ±2.5 V for 1 minute using a fixed STM tip. It has been suggested that STM results obtained under ambient conditions must be evaluated with great care because of the possibility of localized electrochemcial reactions. A novel synthesis method for the production of Cu(II) oxide from an alkaline solution containing Cu(II) tartrate was developed. Rietveld refinement of the cupric oxide films reveals pure Cu(II) oxide with no Cu(I) oxide present in the film.

Soliton excitation in superlattice

International Nuclear Information System (INIS)

Mensah, S.Y.; Allotey, F.K.A.; Mensah, N.G.; Twum, A.K.

1995-10-01

Excitation of soliton in superlattice has been investigated theoretically. It is noted that the soliton velocity u and the length L depend on the amplitude E 0 and that an increase in the amplitude causes soliton width L to approach zero and the velocity u to that of light V in homogeneous medium. The characteristic parameters of soliton u, L and E 0 are related by expression u/L E 0 = ed/2(h/2π) which is constant depending only on the SL period d. It is observed also that the soliton has both energy E = 8V 2 (1 - u 2 /V 2 ) -1/2 and momentum P = u/V 2 E which makes it behave as relativistic free particle with rest energy 8V 2 . Its interaction with electrons can cause the soliton electric effect in SL. (author). 27 refs

Magnetic quantum oscillations of diagonal conductivity in a two-dimensional conductor with a weak square superlattice modulation under conditions of the integer quantum Hall effect

International Nuclear Information System (INIS)

Gvozdikov, V M; Taut, M

2009-01-01

We report on analytical and numerical studies of the magnetic quantum oscillations of the diagonal conductivity σ xx in a two-dimensional conductor with a weak square superlattice modulation under conditions of the integer quantum Hall (IQHE) effect. The quantum Hall effect in such a system differs from the conventional IQHE, in which the finite width of the Landau bands is due to disorder only. The superlattice modulation potential yields a fractal splitting of the Landau levels into Hofstadter minibands. For rational flux through a unit cell, the minibands have a finite width and intrinsic dispersion relations. We consider a regime, now accessible experimentally, in which disorder does not wash out the fractal internal gap structure of the Landau bands completely. We found the following distinctions from the conventional IQHE produced by the superlattice: (i) the peaks in diagonal conductivity are split due to the Hofstadter miniband structure of Landau bands; (ii) the number of split peaks in the bunch, their positions and heights depend irregularly on the magnetic field and the Fermi energy; (iii) the gaps between the split Landau bands (and related quantum Hall plateaus) become narrower with the superlattice modulation than without it.

Effects of electron correlations application to Ti atoms on physical properties of (LaMnO{sub 3}){sub m}/(SrTiO{sub 3}){sub n} superlattices

Energy Technology Data Exchange (ETDEWEB)

Aezami, A., E-mail: a.aezami@gmail.com; Abolhassani, M.; Elahi, M.

2016-05-15

Magnetic structures and Curie temperatures of the (LaMnO{sub 3}){sub m}/(SrTiO{sub 3}){sub n} superlattices (SLm–n) with m=1, 2, 3 and n=1, 2, 3, 8 were investigated, using density functional theory implemented in Quantum-Espresso open source code. By applying on-site coulomb interaction (Hubbard term U) to Ti atoms for all of these superlattices, using Stoner–Wolfarth model, it was found that the magnetic order of interfacial atoms of these superlattices changed to ferromagnetic by implying U=5 eV on Ti atoms. The inclusion of electron–electron correlation with U=5 eV on the Ti atoms for all of the superlattices made the two dimensional electron gas (2DEG) formed at the interfaces, half-metallic. The obtained values of Curie temperature, calculated within mean field approximation with U=5 eV on the Ti atoms, are in good agreement with the experimental results. - Highlights: • Calculated the magnetic structure and Curie temperature of the (LaMnO{sub 3}){sub m}/(SrTiO{sub 3}){sub n} superlattices with m=1, 2, 3 and n=1, 2, 3, 8 by mean field approximation. • By implying U=5 eV on the Ti atoms, the magnetic order of interfacial atoms of these superlattices has changed to ferromagnetic. • The 2DEG formed at the interface half-metallic have made in these superlattices by the inclusion of electron-electron correlation with U=5 eV on the Ti atoms for all of the superlattices.

Coherent Phonon Dynamics in Short-Period InAs/GaSb Superlattices

OpenAIRE

Noe, G. T.; Haugan, H. J.; Brown, G. J.; Sanders, G. D.; Stanton, C. J.; Kono, J.

2011-01-01

We have performed ultrafast pump-probe spectroscopy studies on a series of InAs/GaSb-based short-period superlattice (SL) samples with periods ranging from 46 \\AA to 71 \\AA. We observe two types of oscillations in the differential reflectivity with fast ($\\sim$ 1- 2 ps) and slow ($\\sim$ 24 ps) periods. The period of the fast oscillations changes with the SL period and can be explained as coherent acoustic phonons generated from carriers photoexcited within the SL. This mode provides an accura...

Structure and properties of (Sr, Ca)CuO2-BaCuO2 superlattices grown by pulsed laser interval deposition

NARCIS (Netherlands)

Koster, Gertjan; Verbist, Karen; Rijnders, Augustinus J.H.M.; Rogalla, Horst; van Tendeloo, Gustaav; Blank, David H.A.

2001-01-01

We report on the preparation of CuBa2(SrxCa1¿x)nCun¿1Oy compounds by fabrication of (Ba,Sr,Ca)CuO2 superlattices with pulsed laser deposition (PLD). A technique called interval deposition is used to suppress multi-level or island growth resulting in high-quality superlattice structures. Both, the

Multi-analytical study of historical semiconductor pigments

International Nuclear Information System (INIS)

Caporosso, V.

2015-01-01

This work is focused on the study of semiconductor-based pigments, which substituted traditional pigments in the second half of the 19. century. Synthetic semiconductor pigments may be chemically unstable due to the presence of many impurities unintentionally introduced during manufacturing. The aim of this work is to provide an insight on the application of X-ray Fluorescence (XRF) for the analysis of these painting materials, including both Cd- and Zn-based pigments. Three different approaches have been followed: the semi-quantitative analysis of samples with similar elemental composition, the complementary use of XRF and Raman spectroscopy for the analysis of elemental and molecular composition and the synchrotron-based XRF and XANES for the detection of impurities. The synergetic combination of different techniques provides information useful for the definition of specific markers for future analysis of paint-samples with implications for the conservation and treatment of late 19. and early 20. century paintings.

Nanophysics in graphene: neutrino physics in quantum rings and superlattices.

Science.gov (United States)

Fertig, H A; Brey, Luis

2010-12-13

Electrons in graphene at low energy obey a two-dimensional Dirac equation, closely analogous to that of neutrinos. As a result, quantum mechanical effects when the system is confined or subjected to potentials at the nanoscale may be quite different from what happens in conventional electronic systems. In this article, we review recent progress on two systems where this is indeed the case: quantum rings and graphene electrons in a superlattice potential. In the former case, we demonstrate that the spectrum reveals signatures of 'effective time-reversal symmetry breaking', in which the spectra are most naturally interpreted in terms of effective magnetic flux contained in the ring, even when no real flux is present. A one-dimensional superlattice potential is shown to induce strong band-structure changes, allowing the number of Dirac points at zero energy to be manipulated by the strength and/or period of the potential. The emergence of new Dirac points is shown to be accompanied by strong signatures in the conduction properties of the system.

The phase diagrams and the order parameters of the diluted superlattice with antiferromagnetic interface coupling

International Nuclear Information System (INIS)

Oubelkacem, A.; El Aouad, N.; Bentaleb, M.; Laaboudi, B.; Saber, M.

2004-01-01

Using the effective field theory with a probability distribution technique that accounts for the self-spin correlation functions, the magnetic properties of the diluted Ising superlattice consisting of two ferromagnetic materials A and B, with L a layers of diluted spins S a =((1)/(2)) and L b layers of diluted spins S b =1 with antiferromagnetic interface coupling are examined. For fixed values of the reduced exchange interactions and the concentration c of magnetic atoms, the phase diagrams, the two sublattice magnetizations and the total magnetization for the superlattice with the same spin S a =S b =((1)/(2)) and for S a =((1)/(2)), S b =1 are studied as a function of the temperature. We find a number of characteristic phenomena. In particular, the effect of the concentration c of magnetic atoms, the interlayer coupling and the layer thickness on both the compensation temperature and the magnetization profiles are clarified

Competing interactions in ferromagnetic/antiferromagnetic perovskite superlattices

Energy Technology Data Exchange (ETDEWEB)

Takamura, Y.; Biegalski, M.B.; Christen, H.M.

2009-10-22

Soft x-ray magnetic dichroism, magnetization, and magnetotransport measurements demonstrate that the competition between different magnetic interactions (exchange coupling, electronic reconstruction, and long-range interactions) in La{sub 0.7}Sr{sub 0.3}FeO{sub 3}(LSFO)/La{sub 0.7}Sr{sub 0.3}MnO{sub 3}(LSMO) perovskite oxide superlattices leads to unexpected functional properties. The antiferromagnetic order parameter in LSFO and ferromagnetic order parameter in LSMO show a dissimilar dependence on sublayer thickness and temperature, illustrating the high degree of tunability in these artificially layered materials.

Electrodes for Semiconductor Gas Sensors

Science.gov (United States)

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

NARCIS (Netherlands)

2010-01-01

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

Silicon carbide whiskers with superlattice structure: A precursor for a new type of nanoreactor

International Nuclear Information System (INIS)

Lutsenko, Vadym G.

2008-01-01

Silicon carbide whiskers exhibit growth predominantly in the direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elements of doped and composite superlattices. An individual SiC whisker can contain hundreds of quantum wells with anomalous chemical properties. This paper shows that it is possible to selectively etch quantum wells and to construct whiskers with quasi-regularly distributed slit-like nanopores (nanoreactors), which are bordered by polar planes {1 1 1}, {0 0 0 1} or a combination of them, and also to produce flat SiC nanocrystals bordered by polar planes

Intraminiband Relaxation In Doped GaAs/AlGaAs Superlattices Studied By Two-Color Infrared Pump-Probe Experiments

International Nuclear Information System (INIS)

Wagner, M.; Stehr, D.; Schneider, H.; Helm, M.; Andrews, A. M.; Roch, T.; Strasser, G.

2010-01-01

In this work we report on two-color pump-probe measurements to investigate the intraminiband dynamics of doped GaAs/AlGaAs superlattices with different miniband widths smaller or larger than the optical phonon energy. For a miniband with a width larger than the optical phonon energy we found a fast relaxation, independent of the excitation intensity. For narrow minibands this relaxation takes longer and shows a strong temperature and intensity dependence.

Laser induced structural transformation in chalcogenide based superlattices

Energy Technology Data Exchange (ETDEWEB)

Zallo, Eugenio, E-mail: zallo@pdi-berlin.de; Wang, Ruining; Bragaglia, Valeria; Calarco, Raffaella [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2016-05-30

Superlattices made of alternating layers of nominal GeTe and Sb{sub 2}Te{sub 3} have been studied by micro-Raman spectroscopy. A structural irreversible transformation into ordered GeSbTe alloy is induced by high power laser light exposure. The intensity ratio of anti-Stokes and Stokes scattering under laser illumination gives a maximum average temperature in the sample of 177 °C. The latter is lower than the growth temperature and of 400 °C necessary by annealing to transform the structure in a GeSbTe alloy. The absence of this configuration after in situ annealing even up to 300 °C evidences an electronic excitation induced-transition which brings the system into a different and stable crystalline state.

Laser induced structural transformation in chalcogenide based superlattices

International Nuclear Information System (INIS)

Zallo, Eugenio; Wang, Ruining; Bragaglia, Valeria; Calarco, Raffaella

2016-01-01

Superlattices made of alternating layers of nominal GeTe and Sb 2 Te 3 have been studied by micro-Raman spectroscopy. A structural irreversible transformation into ordered GeSbTe alloy is induced by high power laser light exposure. The intensity ratio of anti-Stokes and Stokes scattering under laser illumination gives a maximum average temperature in the sample of 177 °C. The latter is lower than the growth temperature and of 400 °C necessary by annealing to transform the structure in a GeSbTe alloy. The absence of this configuration after in situ annealing even up to 300 °C evidences an electronic excitation induced-transition which brings the system into a different and stable crystalline state.

Nonlinear optical studies in semiconductor-doped glasses under ...

Indian Academy of Sciences (India)

Abstract. Nonlinear optical studies in semiconductor-doped glasses (SDGs) are per- formed under femtosecond laser pulse excitation. Z-scan experiments with 800 nm wave- length pulses are used to excite SDG samples in the resonance and non-resonance regimes. Schott colour glass filter OG 515 shows stronger ...

Theoretical modelling of electron transport in InAs/GaAs quantum dot superlattices

International Nuclear Information System (INIS)

Vukmirovic, Nenad; Ikonic, Zoran; Savic, Ivana; Indjin, Dragan; Harrison, Paul

2006-01-01

A theoretical model describing the electron transport in InAs/GaAs quantum dot infrared photodetectors, modelled as ideal quantum dot superlattices, is presented. The carrier wave functions and energy levels were evaluated using the strain dependent 8-band k.p Hamiltonian and used to calculate all intra- and inter-period transition rates due to interaction with phonons and electromagnetic radiation. The interaction with longitudinal acoustic phonons and electromagnetic radiation was treated perturbatively within the framework of Fermi's golden rule, while the interaction with longitudinal optical phonons was considered taking into account their strong coupling to electrons. The populations of energy levels were then found from a system of rate equations, and the electron current in the superlattice was subsequently extracted. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Semiconductor spintronics

International Nuclear Information System (INIS)

Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

2007-01-01

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

A proposed GaAs-based superlattice solar cell structure with high efficiency and high radiation tolerance

Science.gov (United States)

Goradia, Chandra; Clark, Ralph; Brinker, David

1985-01-01

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their being across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

Science.gov (United States)

Letka, Veronica; Keen, James; Craig, Adam; Marshall, Andrew R. J.

2017-10-01

InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb0.185 SLS structures, grown as undoped absorption epilayers on GaAs, were fabricated using molecular beam epitaxy in order to study the dependence of the ground state transitions on temperature and superlattice period thickness. Photoluminescence peaks at 4 K were obtained with the use of a helium-cooled micro-PL system and an InSb detector, and temperature-dependent absorption spectra were measured in the range 77 K - 300 K on a Fourier Transform Infrared (FTIR) spectrometer, equipped with a 1370 K blackbody source and a DTGS detector. An nBn device sample with the absorber structure identical to one of the undoped samples was also grown and processed with the goal of measuring temperature-dependent spectral response. A model for superlattice band alignment was also devised, incorporating the Bir-Pikus transformation results for uniaxial and biaxial strain, and the Einstein oscillator model for bandgap temperature dependence. Absorption coefficients of several 1000 cm-1 throughout the entire MWIR range are found for all samples, and temperature dependence of the bandgaps is extracted and compared to the model. This and photoluminescence data also demonstrate bandgap shifts consistent with the different superlattice periods of the three samples.

Phonon dispersion relations in monoatomic superlattices: a transfer matrix theory

International Nuclear Information System (INIS)

Albuquerque, E.L. de; Fulco, P.

1986-01-01

We present a lattice dynamical theory for monoatomic superlattices consisting of alternating layers of two different materials. Using a transfer matrix method we obtain explicit the equation for dispersion of the phonon's bulk modes, including the well known result in the long wave-length limit which can be obtained by elasticity theory. An illustation is shown and its features discussed. (Author) [pt

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

Directory of Open Access Journals (Sweden)

Stefano Cecchi

2017-02-01

Full Text Available Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.

Semiconductor Manufacturing equipment introduction

International Nuclear Information System (INIS)

Im, Jong Sun

2001-02-01

This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

International Nuclear Information System (INIS)

Chand, Subhash; Bala, Saroj

2007-01-01

The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

73Se, an unusual PAC probe applied to the study of semiconductors

International Nuclear Information System (INIS)

Vianden, R.

1990-01-01

The isotope 73 Se was produced by an (α,3n) reaction from 72 Ge in order to study the applicability of this probe to PAC defect studies in semiconductors. Measurements before and after annealing recoil implanted samples showed that the quadrupole interaction of the 66 keV state in the daughter isotope 73 As with the lattice damage created by the implantation is comparable to that found for 111 In in Ge. This indicates that 73 Se can be a suitable probe for defect studies in semiconductors with nuclear methods. (orig.)

Passivation of MBE grown InGaSb/InAs superlattice photodiodes

Science.gov (United States)

Hill, Cory J.; Keo, Sam S.; Mumolo, Jason M.; Gunapala, Sarath D.

2005-01-01

We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

Transport properties of YBa2Cu3O7/PrBa2Cu3O7-superlattices

International Nuclear Information System (INIS)

El Tahan, Ayman Mohamed Moussa

2010-01-01

The understanding of the coupling between superconducting YBa 2 Cu 3 O 7 (YBCO) layers decoupled by non superconducting PrBa 2 Cu 3 O 7 (PBCO) layers in c-axis oriented superlattices was the aim of this thesis. For this purpose two conceptually different kind of transport experiments have been performed. In the first type of transport experiments the current is flowing parallel to the layers. Here the coupling is probed indirectly using magnetic vortex lines, which are penetrating the superlattice. Movement of the vortex segments in neighbouring YBCO layers is more or less coherent depending on the thickness of both the superconducting and non superconducting layers. This in-plane transport was measured either by sending an external current through bridges patterned in the superlattice or by an induced internal current. The vortex-creep activation energy U was determined by analysis of the in-plane resistive transition in an external magnetic field B oriented along the c-axis. The activation energies for two series of superlattices were investigated. In one series the thickness of the YBCO layers was constant (n Y =4 unit cells) and the number of the PBCO unit cells was varied, while in the other the number of PBCO layers was constant (n P =4) and n Y varied. The correlation length of the vortex system was determined to be 80 nm along the c-axis direction. It was found that even a single PBCO unit cell in a superlattice effectively cuts the flux lines into shorter weakly coupled segments, and the coupling of the vortex systems in neighbouring layers is negligible already for a thickness of four unit cells of the PBCO layers. A characteristic variation of the activation energy for the two series of superlattices was found, where U 0 is proportional to the YBCO thickness. A change in the variation of U 0 with the current I in the specimen was observed. The analysis of standard dc magnetization relaxation data obtained for a series superlattices revealed the

The phase diagrams and the order parameters of the diluted transverse superlattice with antiferromagnetic interface coupling

International Nuclear Information System (INIS)

Oubelkacem, A.; El Aouad, N.; Benaboud, A.; Saber, M.

2004-01-01

Using the effective field theory with a probability distribution technique that accounts for the self-spin correlation functions, the magnetic properties of the Ising superlattice consisting of two ferromagnetic materials A and B, with L a layers of diluted spins S a =((1)/(2)) and L b layers of diluted spins S b =1 in an applied transverse field Ω with antiferromagnetic interface coupling are examined. For fixed values of the reduced exchange interactions and the concentration c of magnetic atoms, the phase diagrams and the total magnetization for the superlattice are studied as a function of the transverse field and the temperature. We find a number of characteristic phenomena. In particular, the effect of the concentration c of magnetic atoms, the interlayer coupling and the transverse field on both the compensation temperature and the magnetization profiles are clarified. Some of them may be related to the experimental works of rare-earth (RE)/transition metal (TM) multilayer films

First-principles modeling of titanate/ruthenate superlattices

Science.gov (United States)

Junquera, Javier

2013-03-01

The possibility to create highly confined two-dimensional electron gases (2DEG) at oxide interfaces has generated much excitement during the last few years. The most widely studied system is the 2DEG formed at the LaO/TiO2 polar interface between LaAlO3 and SrTiO3, where the polar catastrophe at the interface has been invoked as the driving force. More recently, partial or complete delta doping of the Sr or Ti cations at a single layer of a SrTiO3 matrix has also been used to generate 2DEG. Following this recipe, we report first principles characterization of the structural and electronic properties of (SrTiO3)5/(SrRuO3)1 superlattices, where all the Ti of a given layer have been replaced by Ru. We show that the system exhibits a spin-polarized two-dimensional electron gas extremely confined to the 4 d orbitals of Ru in the SrRuO3 layer, a fact that is independent of the level of correlation included in the simulations. For hybrid functionals or LDA+U, every interface in the superlattice behaves as minority-spin half-metal ferromagnet, with a magnetic moment of μ = 2.0 μB/SrRuO3 unit. The shape of the electronic density of states, half metallicity and magnetism are explained in terms of a simplified tight-binding model, considering only the t2 g orbitals plus (i) the bi-dimensionality of the system, and (ii) strong electron correlations. Possible applications are discussed, from their eventual role in thermoelectric applications to the possible tuning of ferromagnetic properties of the 2DEG with the polarization of the dielectric. Work done in collaboration with P. García, M. Verissimo-Alves, D. I. Bilc, and Ph. Ghosez. Financial support provided by MICINN Grant FIS2009-12721-C04-02, and by the European Union Grant No. CP-FP 228989-2 ``OxIDes.'' The authors thankfully acknowledge the computer resources, technical expertise and assistance provided by the BSC/RES.

Matter-Wave Solitons In Optical Superlattices

International Nuclear Information System (INIS)

Louis, Pearl J. Y.; Ostrovskaya, Elena A.; Kivshar, Yuri S.

2006-01-01

In this work we show that the properties of both bright and dark Bose-Einstein condensate (BEC) solitons trapped in optical superlattices can be controlled by changing the shape of the trapping potential whilst maintaining a constant periodicity and lattice height. Using this method we can control the properties of bright gap solitons by dispersion management. We can also control the interactions between dark lattice solitons. In addition we demonstrate a method for controlled generation of matter-wave gap solitons in stationary optical lattices by interfering two condensate wavepackets, producing a single wavepacket at a gap edge with properties similar to a gap soliton. As this wavepacket evolves, it forms a bright gap soliton

Handbook of luminescent semiconductor materials

CERN Document Server

Bergman, Leah

2011-01-01

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

Metallurgy and purification of semiconductor materials

International Nuclear Information System (INIS)

Mughal, G.R.; Ali, M.M.; Ali, I.

1996-01-01

In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

Theoretical modelling of electron transport in InAs/GaAs quantum dot superlattices

Energy Technology Data Exchange (ETDEWEB)

Vukmirovic, Nenad; Ikonic, Zoran; Savic, Ivana; Indjin, Dragan; Harrison, Paul [School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom)

2006-07-01

A theoretical model describing the electron transport in InAs/GaAs quantum dot infrared photodetectors, modelled as ideal quantum dot superlattices, is presented. The carrier wave functions and energy levels were evaluated using the strain dependent 8-band k.p Hamiltonian and used to calculate all intra- and inter-period transition rates due to interaction with phonons and electromagnetic radiation. The interaction with longitudinal acoustic phonons and electromagnetic radiation was treated perturbatively within the framework of Fermi's golden rule, while the interaction with longitudinal optical phonons was considered taking into account their strong coupling to electrons. The populations of energy levels were then found from a system of rate equations, and the electron current in the superlattice was subsequently extracted. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoinduced Domain Pattern Transformation in Ferroelectric-Dielectric Superlattices

Energy Technology Data Exchange (ETDEWEB)

Ahn, Youngjun; Park, Joonkyu; Pateras, Anastasios; Rich, Matthew B.; Zhang, Qingteng; Chen, Pice; Yusuf, Mohammed H.; Wen, Haidan; Dawber, Matthew; Evans, Paul G.

2017-07-01

The nanodomain pattern in ferroelectric/dielectric superlattices transforms to a uniform polarization state under above-bandgap optical excitation. X-ray scattering reveals a disappearance of domain diffuse scattering and an expansion of the lattice. The reappearance of the domain pattern occurs over a period of seconds at room temperature, suggesting a transformation mechanism in which charge carriers in long-lived trap states screen the depolarization field. A Landau-Ginzburg-Devonshire model predicts changes in lattice parameter and a critical carrier concentration for the transformation.

Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire.

Science.gov (United States)

Mu, Xin; Wang, Lili; Yang, Xueming; Zhang, Pu; To, Albert C; Luo, Tengfei

2015-11-16

Due to interfacial phonon scattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low thermal conductivity, which is very attractive for thermoelectrics. In this paper, we demonstrate using molecular dynamics simulations that the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW). The structural hierarchy introduces defects to disrupt the periodicity of regular SNW and scatters coherent phonons, which are the key contributors to thermal transport in regular SNW. Our simulation results show that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low thermal conductivity of regular Si/Ge SNW. By randomizing the arrangement of defects and imposing additional surface complexities to enhance phonon scattering, further reduction in thermal conductivity can be achieved. Compared to pure Si nanowire, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%. It is concluded that the hierarchical structuring is an effective way of reducing thermal conductivity significantly in SNW, which can be a promising path for improving the efficiency of Si/Ge-based SNW thermoelectrics.

Semiconductor studies by radioactive probe atoms

International Nuclear Information System (INIS)

Wichert, Thomas

2003-01-01

There are a growing number of experimental techniques that have in common the usage of radioactive isotopes for the characterization of semiconductors. These techniques deliver atomistic information about identity, formation, lattice environment, and electronic structure, as well as dynamics of defects and defect complexes. The results obtained by different hyperfine techniques are discussed in context with the study of intrinsic and extrinsic defects, i.e. of vacancies or self-interstitials and dopant or impurity atoms, respectively. In addition, the employment of electrical and optical techniques in combination with radioactive isotopes is presented

The electronic states calculated using the sinusoidal potential for Cd1-xZnxS quantum dot superlattices

International Nuclear Information System (INIS)

Sakly, A.; Safta, N.; Mejri, H.; Lamine, A. Ben

2011-01-01

Research highlights: → This paper is dedicated to structures based on Cd 1-x Zn x S. - Abstract: The present work reports on a theoretical investigation of superlattices based on Cd 1-x Zn x S quantum dots embedded in an insulating material. The system to model is assumed to be a series of flattened cylindrical quantum dots with a finite barrier at the boundary and is studied using a sinusoidal potential. The electronic states of both Γ 1 - (ground) and Γ 2 - (first excited) minibands have been computed as a function of inter-quantum dot separation and Zn composition. An analysis of the results shows that the widths of Γ 1 - and Γ 2 - minibands decrease as the superlattice period and Zn content increase separately. Moreover, the sinusoidal shape of the confining potential accounts for the coupling between quantum dots quantitatively less than the Kronig-Penney potential model.

Defects in semiconductors

International Nuclear Information System (INIS)

Pimentel, C.A.F.

1983-01-01

Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors. Growth and properties

Energy Technology Data Exchange (ETDEWEB)

Tran, Lien

2011-04-13

This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In{sub 1-x}Mn{sub x}Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 {mu}m, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm{sup 2}/V s Vs with associated electron concentration of 2.9.10{sup 6} cm{sup -3} at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm{sup 2}/V s measured at 300 K, with an associated carrier concentration of 2.6.10{sup 1}6 cm{sup -3} is found for the best sample that was grown at 340 C with a 0.06 {mu}m-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In{sub 1-x}Mn{sub x}Sb/GaAs (001) is prepared by adding a few percent of Mn into the

Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

International Nuclear Information System (INIS)

Bennett, S E; Kappers, M J; Barnard, J S; Humphreys, C J; Oliver, R A; Clifton, P H; Ulfig, R M

2010-01-01

P-type conducting layers are critical in GaN-based devices such as LEDs and laser diodes. Such layers are often produced by doping GaN with Mg, but the hole concentration can be enhanced using AlGaN/GaN p-type superlattices by exploiting the built-in polarisation fields. A Mg-doped AlGaN/GaN superlattice was studied using SIMS. Although the AlGaN and GaN were nominally doped to the same level, the SIMS data suggested a difference in doping density between the two materials. Atom probe tomography was then used to investigate the Mg distribution. The superlattice repeats were clearly visible, as expected and, in addition, significant Mg clustering was observed in both the GaN and AlGaN layers. There were many more Mg clusters in the AlGaN layers than the GaN layers, accounting for the difference in doping density suggested by SIMS. To evaluate the structural accuracy of the atom probe reconstruction, layer thicknesses from the atom probe were compared with STEM images. Finally, future work is proposed to investigate the Mg clusters in the TEM.

Topological hierarchy matters — topological matters with superlattices of defects

International Nuclear Information System (INIS)

He Jing; Kou Su-Peng

2016-01-01

Topological insulators/superconductors are new states of quantum matter with metallic edge/surface states. In this paper, we review the defects effect in these topological states and study new types of topological matters — topological hierarchy matters. We find that both topological defects (quantized vortices) and non topological defects (vacancies) can induce topological mid-gap states in the topological hierarchy matters after considering the superlattice of defects. These topological mid-gap states have nontrivial topological properties, including the nonzero Chern number and the gapless edge states. Effective tight-binding models are obtained to describe the topological mid-gap states in the topological hierarchy matters. (topical review)

Enhanced thermoelectric figure-of-merit in thermally robust, nanostructured superlattices based on SrTiO3

KAUST Repository

Abutaha, Anas I.

2015-03-24

Thermoelectric (TE) metal oxides overcome crucial disadvantages of traditional heavy-metal-alloy-based TE materials, such as toxicity, scarcity, and instability at high temperatures. Here, we report the TE properties of metal oxide superlattices, composed from alternating layers of 5% Pr3+-doped SrTiO3-δ (SPTO) and 20% Nb5+-doped SrTiO3-δ (STNO) fabricated using pulsed laser deposition (PLD). Excellent stability is established for these superlattices by maintaining the crystal structure and reproducing the TE properties after long-time (20 h) annealing at high temperature (∼1000 K). The introduction of oxygen vacancies as well as extrinsic dopants (Pr3+ and Nb5+), with different masses and ionic radii, at different lattice sites in SPTO and STNO layers, respectively, results in a substantial reduction of thermal conductivity via scattering a wider range of phonon spectrum without limiting the electrical transport and thermopower, leading to an enhancement in the figure-of-merit (ZT). The superlattice composed of 20 SPTO/STNO pairs, 8 unit cells of each layer, exhibits a ZT value of 0.46 at 1000 K, which is the highest among SrTiO3-based thermoelectrics. © 2015 American Chemical Society.

Enhanced thermoelectric figure-of-merit in thermally robust, nanostructured superlattices based on SrTiO3

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Li, Kun; Dehkordi, Arash Mehdizadeh; Tritt, Terry M.; Alshareef, Husam N.

2015-01-01

Thermoelectric (TE) metal oxides overcome crucial disadvantages of traditional heavy-metal-alloy-based TE materials, such as toxicity, scarcity, and instability at high temperatures. Here, we report the TE properties of metal oxide superlattices, composed from alternating layers of 5% Pr3+-doped SrTiO3-δ (SPTO) and 20% Nb5+-doped SrTiO3-δ (STNO) fabricated using pulsed laser deposition (PLD). Excellent stability is established for these superlattices by maintaining the crystal structure and reproducing the TE properties after long-time (20 h) annealing at high temperature (∼1000 K). The introduction of oxygen vacancies as well as extrinsic dopants (Pr3+ and Nb5+), with different masses and ionic radii, at different lattice sites in SPTO and STNO layers, respectively, results in a substantial reduction of thermal conductivity via scattering a wider range of phonon spectrum without limiting the electrical transport and thermopower, leading to an enhancement in the figure-of-merit (ZT). The superlattice composed of 20 SPTO/STNO pairs, 8 unit cells of each layer, exhibits a ZT value of 0.46 at 1000 K, which is the highest among SrTiO3-based thermoelectrics. © 2015 American Chemical Society.

Ionic Potential and Band Narrowing as a Source of Orbital Polarization in Nickelate/Insulator Superlattices

Science.gov (United States)

Georgescu, Alexandru B.; Disa, Ankit S.; Kumah, Divine P.; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

Nickelate interfaces display complex, interacting electronic properties such as thickness dependent metal-insulator transitions. One large body of effort involving nickelates has aimed to split the energies of the Ni 3d orbitals (orbital polarization) to make the resulting band structure resemble that of cuprate superconductors. The most commonly studied interfacial system involves superlattices of alternating nickelate and insulating perovksite-structure layers; the resulting orbital polarization at the nickelate-insulator interface is understood as being due to confinement or structural symmetry breaking. By using first principles theory on the NdNiO3/NdAlO3 superlattice, we show that another important source of orbital polarization stems from electrostatic effects: the more ionic nature of the cations in the insulator (when compared to the nickelate) can shift the relative orbital energies of the Ni. We use density functional theory (DFT) and add electronic correlations via slave-bosons to describe the effect of correlation-induced band narrowing on the orbital polarization. Work supported by NSF Grant MRSEC DMR-1119826.

Optical and vibrational properties of (ZnO){sub k} In{sub 2}O{sub 3} natural superlattice nanostructures

Energy Technology Data Exchange (ETDEWEB)

Margueron, Samuel [Laboratoire Matériaux Optiques, Photonique et Systèmes, Université de Lorraine et CentraleSupélec, 57070 Metz (France); John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Maryland 02138 (United States); Pokorny, Jan; Skiadopoulou, Stella; Kamba, Stanislav [Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8 (Czech Republic); Liang, Xin [School of Materials Science and Engineering, Changzhou University, Changzhou, Jiangsu Province 213164 (China); Clarke, David R. [John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Maryland 02138 (United States)

2016-05-21

A thermodynamically stable series of superlattices, (ZnO){sub k}In{sub 2}O{sub 3}, form in the ZnO-In{sub 2}O{sub 3} binary oxide system for InO{sub 1.5} concentrations from about 13 up to about 33 mole percent (m/o). These natural superlattices, which consist of a periodic stacking of single, two-dimensional sheets of InO{sub 6} octahedra, are found to give rise to systematic changes in the optical and vibrational properties of the superlattices. Low-frequency Raman scattering provides the evidence for the activation of acoustic phonons due to the folding of Brillouin zone. New vibrational modes at 520 and 620 cm{sup −1}, not present in either ZnO or In{sub 2}O{sub 3}, become Raman active. These new modes are attributed to collective plasmon oscillations localized at the two-dimensional InO{sub 1.5} sheets. Infrared reflectivity experiments, and simulations taking into account a negative dielectric susceptibility due to electron carriers in ZnO and interface modes of the dielectric layer of InO{sub 2}, explain the occurrence of these new modes. We postulate that a localized electron gas forms at the ZnO/InO{sub 2} interface due to the electron band alignment and polarization effects. All our observations suggest that there are quantum contributions to the thermal and electrical conductivity in these natural superlattices.

Thermoelectric properties of IV–VI-based heterostructures and superlattices

Energy Technology Data Exchange (ETDEWEB)

Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

2015-07-15

Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV�

The ferromagnet spin-1/2 Ising superlattice in a transverse field

International Nuclear Information System (INIS)

Bouziane, T.; Saber, M.; Belaaraj, A.; Ainane, A.

1998-09-01

The phase transitions of a ferromagnet spin-1/2 Ising superlattice consisting of two different materials in a transverse field is examined with the use of effective field theory that accounts for the self-spin function correlation. The critical temperature of the system is studied as a function of the thickness of the constituents in a unit cell and of exchange interactions in each material. A critical interface exchange interaction above which the interface magnetism appears is found. The effects of a uniform transverse field and the interface exchange interaction on the parameters of the system are also investigated. (author)

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

Science.gov (United States)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

Spin-dependent Hall effect in degenerate semiconductors: a theoretical study

Energy Technology Data Exchange (ETDEWEB)

Idrish Miah, M [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)], E-mail: m.miah@griffith.edu.au

2008-10-15

The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V{sub SDH}) is derived, and drift and diffusive contributions to V{sub SDH} are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V{sub SDH} increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V{sub SDH} is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.

Spin-dependent Hall effect in degenerate semiconductors: a theoretical study

International Nuclear Information System (INIS)

Idrish Miah, M

2008-01-01

The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V SDH ) is derived, and drift and diffusive contributions to V SDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V SDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V SDH is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.

The phase diagrams of the site-diluted spin-1/2 Ising superlattice

International Nuclear Information System (INIS)

Saber, A.; Essaoudi, I.; Ainane, A.; Dujardin, F.; Saber, M.; Stebe, B.

1998-08-01

Using the effective field theory with a probability distribution technique that accounts for the single-site spin correlations, the critical behavior of a diluted spin-1/2 Ising superlattice consisting of two different ferromagnet materials is examined. The critical temperature of the system is studied as a function of the thickness of the constituents in a unit cell, the concentration of magnetic atoms, and the exchange interactions in each material. It is shown that the properties of the diluted system are different from those of the corresponding pure system. (author)

Superior Properties of Energetically Stable La2/3Sr1/3MnO3/Tetragonal BiFeO3 Multiferroic Superlattices

KAUST Repository

Feng, Nan; Mi, Wenbo; Wang, Xiaocha; Cheng, Yingchun; Schwingenschlö gl, Udo

2015-01-01

The superlattice of energetically stable La2/3Sr1/3MnO3 and tetragonal BiFeO3 is investigated by means of density functional theory. The superlattice as a whole exhibits a half-metallic character, as is desired for spintronic devices. The interfacial electronic states and exchange coupling are analyzed in details. We demonstrate that the interfacial O atoms play a key role in controlling the coupling. The higher ferroelectricity of tetragonal BiFeO3 and stronger response to the magnetic moment in La2/3Sr1/3MnO3/BiFeO3 superlattice show a strongly enhanced electric control of the magnetism as compared to the rhombohedral one. Therefore, it is particularly practical interest in the magnetoelectric controlled spintronic devices.

Superior Properties of Energetically Stable La2/3Sr1/3MnO3/Tetragonal BiFeO3 Multiferroic Superlattices

KAUST Repository

Feng, Nan

2015-04-30

The superlattice of energetically stable La2/3Sr1/3MnO3 and tetragonal BiFeO3 is investigated by means of density functional theory. The superlattice as a whole exhibits a half-metallic character, as is desired for spintronic devices. The interfacial electronic states and exchange coupling are analyzed in details. We demonstrate that the interfacial O atoms play a key role in controlling the coupling. The higher ferroelectricity of tetragonal BiFeO3 and stronger response to the magnetic moment in La2/3Sr1/3MnO3/BiFeO3 superlattice show a strongly enhanced electric control of the magnetism as compared to the rhombohedral one. Therefore, it is particularly practical interest in the magnetoelectric controlled spintronic devices.

Ordered patterns and structures via interfacial self-assembly: superlattices, honeycomb structures and coffee rings.

Science.gov (United States)

Ma, Hongmin; Hao, Jingcheng

2011-11-01

Self-assembly is now being intensively studied in chemistry, physics, biology, and materials engineering and has become an important "bottom-up" approach to create intriguing structures for different applications. Self-assembly is not only a practical approach for creating a variety of nanostructures, but also shows great superiority in building hierarchical structures with orders on different length scales. The early work in self-assembly focused on molecular self-assembly in bulk solution, including the resultant dye aggregates, liposomes, vesicles, liquid crystals, gels and so on. Interfacial self-assembly has been a great concern over the last two decades, largely because of the unique and ingenious roles of this method for constructing materials at interfaces, such as self-assembled monolayers, Langmuir-Blodgett films, and capsules. Nanocrystal superlattices, honeycomb films and coffee rings are intriguing structural materials with more complex features and can be prepared by interfacial self-assembly on different length scales. In this critical review, we outline the recent development in the preparation and application of colloidal nanocrystal superlattices, honeycomb-patterned macroporous structures by the breath figure method, and coffee-ring-like patterns (247 references). This journal is © The Royal Society of Chemistry 2011

InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors: Growth and properties

International Nuclear Information System (INIS)

Tran, Lien

2011-01-01

This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In 1-x Mn x Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 μm, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm 2 /V s Vs with associated electron concentration of 2.9.10 6 cm -3 at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm 2 /V s measured at 300 K, with an associated carrier concentration of 2.6.10 1 6 cm -3 is found for the best sample that was grown at 340 C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In 1-x Mn x Sb/GaAs (001) is prepared by adding a few percent of Mn into the host material InSb during growth. I have

Scanning electron microscopy of semiconductor materials

International Nuclear Information System (INIS)

Bresse, J.F.; Dupuy, M.

1978-01-01

The use of scanning electron microscopy in semiconductors opens up a large field of use. The operating modes lending themselves to the study of semiconductors are the induced current, cathodoluminescence and the use of the potential contrast which can also be applied very effectively to the study of the devices (planar in particular). However, a thorough knowledge of the mechanisms of the penetration of electrons, generation and recombination of generated carriers in a semiconductor is necessary in order to attain a better understanding of the operating modes peculiar to semiconductors [fr

Full Polarization Analysis of Resonant Superlattice and Forbidden x-ray Reflections in Magnetite

International Nuclear Information System (INIS)

Wilkins, S.B.; Bland, S.R.; Detlefs, B.; Beale, T.A.W.; Mazzoli, C.; Joly, Y.; Hatton, P.D.; Lorenzo, J.E.; Brabers, V.A.M.

2009-01-01

Despite being one of the oldest known magnetic materials, and the classic mixed valence compound, thought to be charge ordered, the structure of magnetite below the Verwey transition is complex and the presence and role of charge order is still being debated. Here, we present resonant x-ray diffraction data at the iron K-edge on forbidden (0, 0, 2n+1) C and superlattice (0, 0, 2n+1/2)C reflections. Full linear polarization analysis of the incident and scattered light was conducted in order to explore the origins of the reflections. Through simulation of the resonant spectra we have confirmed that a degree of charge ordering takes place, while the anisotropic tensor of susceptibility scattering is responsible for the superlattice reflections below the Verwey transition. We also report the surprising result of the conversion of a significant proportion of the scattered light from linear to nonlinear polarization.

THz elastic dynamics in finite-size CoFeB-MgO phononic superlattices

Energy Technology Data Exchange (ETDEWEB)

Ulrichs, Henning, E-mail: hulrich@gwdg.de; Meyer, Dennis; Müller, Markus; Wittrock, Steffen; Mansurova, Maria [I. Physical Institute, Georg-August University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Walowski, Jakob; Münzenberg, Markus [Institute of Physics, Ernst-Moritz-Arndt University of Greifswald, Felix-Hausdorff-Str. 6, 17489 Greifswald (Germany)

2016-10-14

In this article, we present the observation of coherent elastic dynamics in a nano-scale phononic superlattice, which consists of only 4 bilayers. We demonstrate how ultra-short light pulses with a length of 40 fs can be utilized to excite a coherent elastic wave at 0.535 THz, which persist over about 20 ps. In later steps of the elastic dynamics, modes with frequency of 1.7 THz and above appear. All these modes are related to acoustic band gaps. Thus, the periodicity strongly manifests in the wave physics, although the system under investigation has only a small number of spatial periods. To further illustrate this, we show how by breaking the translational invariance of the superlattice, these features can be suppressed. Discussed in terms of phonon blocking and radiation, we elucidate in how far our structures can be considered as useful building blocks for phononic devices.

Engineering the oxygen coordination in digital superlattices

Energy Technology Data Exchange (ETDEWEB)

Cook, Seyoung [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Department of Materials Science, Northwestern University, Evanston, Illinois 60202, USA; Andersen, Tassie K. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Department of Materials Science, Northwestern University, Evanston, Illinois 60202, USA; Hong, Hawoong [X-Ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Rosenberg, Richard A. [X-Ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Marks, Laurence D. [Department of Materials Science, Northwestern University, Evanston, Illinois 60202, USA; Fong, Dillon D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

2017-12-01

The oxygen sublattice in the complex oxides is typically composed of corner-shared polyhedra, with transition metals at their centers. The electronic and chemical properties of the oxide depend on the type and geometric arrangement of these polyhedra, which can be controlled through epitaxial synthesis. Here, we use oxide molecular beam epitaxy to create SrCoOx:SrTiO3 superlattices with tunable oxygen coordination environments and sublattice geometries. Using soft X-ray spectroscopy, we find that the chemical state of Co can be varied with the polyhedral arrangement, demonstrating a new strategy for achieving unique electronic properties in the transition metal oxides.

Magnetic excitations in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

2009-01-01

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

Novel Si-Ge-C Superlattices for More than Moore CMOS

Science.gov (United States)

2016-03-31

Keywords: Silicon ; Germanium; Carbon; Superlattices; Direct Band-Gaps; Silicon - Photonics ; Image Sensors. Introduction Materials with direct band-gaps and...Wang Z., B. Tian, M. Pantouvaki, et al., “Room- temperature InP distributed feedback laser array directly grown on silicon ”, Nature Photonics 9, 2015...Creek Blvd. Suite 284 San Jose, CA 95129 Contact author: Lynn.Forester@Quantumsemi.com Abstract: The search for Silicon -based direct band-gap

Optical absorption in planar graphene superlattice: The role of structural parameters

Science.gov (United States)

Azadi, L.; Shojaei, S.

2018-04-01

We theoretically studied the optically driven interband transitions in a planar graphene superlattices (PGSL) formed by patterning graphene sheet on laterally hetrostructured substrate as Sio2/hBN. A tunable optical transitions between minibands is observed based on engineering structural parameters. We derive analytically expression for optical absorption from two-band model. Considerable optical absorption is obtained for different ratios between widths of heterostructured substrate and is explained analytically from the view point of wavefunction engineering and miniband dispersion, in details. The role of different statuses of polarization as circular and linear are considered. Our study paves a way toward the control of optical properties of PGSLs to be implemented in optoelectronics devices.

Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

International Nuclear Information System (INIS)

Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

2016-01-01

Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

Optical properties of low-dimensional materials

CERN Document Server

Ogawa, T

1998-01-01

This book surveys recent theoretical and experimental studies of optical properties of low-dimensional materials. As an extended version of Optical Properties of Low-Dimensional Materials (Volume 1, published in 1995 by World Scientific), Volume 2 covers a wide range of interesting low-dimensional materials including both inorganic and organic systems, such as disordered polymers, deformable molecular crystals, dilute magnetic semiconductors, SiGe/Si short-period superlattices, GaAs quantum wires, semiconductor microcavities, and photonic crystals. There are excellent review articles by promis

Semiconductor physics

CERN Document Server

Böer, Karl W

2018-01-01

This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

Transmission spectra of electrons through the Thue-Morse graphene superlattice

International Nuclear Information System (INIS)

Korol', A.M.

2014-01-01

The transmission spectra of the Thue-Morse superlattice (SL) based on a monolayer gapped graphene are investigated. The SL consists of rectangular barriers located along the Ox axis. The Thue-Morse aperiodic modulation is proposed to be realized due to the difference in values of the gap width in different SL elements. It is shown that the effective splitting of the allowed bands (and thereby the arising of a series of gaps) is observed under the influence of the aperiodic factor in the case of normal incidence of the electron wave on the SL as well as in the case of oblique incidence. The spectra are periodical with potential barrier height. In some regions of the spectra, the splitting of bands is subjected to the Fibonacci inflation rule in every new Thue-Morse generation. As in the periodical graphene-based SL, in every Thue-Morse sequence a superlattice Dirac point is created. The width of the gap associated with this point depends on SL parameters substantially; at the same time the energy location of this gap depends weakly on mass term in the Hamiltonian and it does not depend on SL period. The spectra dependence on the angle of electron wave incidence is not substantial

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.; Dahiya, V.; Cavallo, F. [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Myers, S. [SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States); Krishna, S., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States)

2016-02-29

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

Thermoelectric power of Bi and Bi{sub 1{minus}x}Sb{sub x} alloy thin films and superlattices grown by MBE

Energy Technology Data Exchange (ETDEWEB)

Cho, S; DiVenere, A; Wong, G K; Ketterson, J B; Meyer, J R; Hoffman, C A

1997-07-01

The authors have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi{sub 1{minus}x} alloy thin films and superlattices as a function of temperature in the range 20--300 K. They have observed that the TEP of a Bi thin film of 1 {micro}m thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 {angstrom} and 800 {angstrom} Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi{sub 1{minus}x}Sb{sub x} thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi{sub 1{minus}x}Sb{sub x} well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

Microscopical Studies of Structural and Electronic Properties of Semiconductors

CERN Multimedia

2002-01-01

The electronic and structural properties of point defects in semiconductors, e.g. radiation defects, impurities or passivating defects can excellently be studied by the hyperfine technique of Perturbed Angular Correlation (PAC). The serious limitation of this method, the small number of chemically different radioactive PAC probe atoms can be widely overcome by means of ISOLDE. Providing shortliving isotopes, which represent common dopants as well as suitable PAC probe atoms, the ISOLDE facility enables a much broader application of PAC to problems in semiconductor physics.\\\\ Using the probe atom $^{111m}$ Cd , the whole class of III-V compounds becomes accessible for PAC investigations. First successful experiments in GaAs, InP and GaP have been performed, concerning impurity complex formation and plasma induced defects. In Si and Ge, the electronic properties~-~especially their influence on acceptor-donor interaction~-~could be exemplarily st...

Magnetism by interfacial hybridization and p-type doping of MoS(2) in Fe(4)N/MoS(2) superlattices: a first-principles study.

Science.gov (United States)

Feng, Nan; Mi, Wenbo; Cheng, Yingchun; Guo, Zaibing; Schwingenschlögl, Udo; Bai, Haili

2014-03-26

Magnetic and electronic properties of Fe4N(111)/MoS2(√3 × √3) superlattices are investigated by first-principles calculations, considering two models: (I) Fe(I)Fe(II)-S and (II) N-S interfaces, each with six stacking configurations. In model I, strong interfacial hybridization between Fe(I)/Fe(II) and S results in magnetism of monolayer MoS2, with a magnetic moment of 0.33 μB for Mo located on top of Fe(I). For model II, no magnetism is induced due to weak N-S interfacial bonding, and the semiconducting nature of monolayer MoS2 is preserved. Charge transfer between MoS2 and N results in p-type MoS2 with Schottky barrier heights of 0.5-0.6 eV. Our results demonstrate that the interfacial geometry and hybridization can be used to tune the magnetism and doping in Fe4N(111)/MoS2(√3 × √3) superlattices.

Dualband MW/LW Strained Layer Superlattice Focal Plane Arrays For Satellite-Based Wildfire Detection, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Dualband focal plane arrays (FPAs) based on gallium-free Type-II strained layer superlattice (SLS) photodiodes have recently experienced significant advances. We...

A comparative study of semiconductor-based plasmonic metamaterials

DEFF Research Database (Denmark)

Naik, Gururaj V.; Boltasseva, Alexandra

2011-01-01

and very large negative real permittivity values, and in addition, their optical properties cannot be tuned. These issues that put severe constraints on the device applications of MMs could be overcome if semiconductors are used as plasmonic materials instead of metals. Heavily doped, wide bandgap oxide...... semiconductors could exhibit both a small negative real permittivity and relatively small losses in the NIR. Heavily doped oxides of zinc and indium were already reported to be good, low loss alternatives to metals in the NIR range. Here, we consider these transparent conducting oxides (TCOs) as alternative...

Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices

Czech Academy of Sciences Publication Activity Database

Goncharuk, Natalya; Smrčka, Ludvík; Svoboda, Pavel; Vašek, Petr; Kučera, Jan; Krupko, Yu.; Wegscheider, W.

2007-01-01

Roč. 75, č. 24 (2007), 245322/1-245322/7 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652 Institutional research plan: CEZ:AV0Z10100521 Keywords : persistent photoconductivity * superlattice * Fermi surface Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.172, year: 2007

Visualizing period fluctuations in strained-layer superlattices with scanning tunneling microscopy

Science.gov (United States)

Kanedy, K.; Lopez, F.; Wood, M. R.; Gmachl, C. F.; Weimer, M.; Klem, J. F.; Hawkins, S. D.; Shaner, E. A.; Kim, J. K.

2018-01-01

We show how cross-sectional scanning tunneling microscopy (STM) may be used to accurately map the period fluctuations throughout epitaxial, strained-layer superlattices based on the InAs/InAsSb and InGaAs/InAlAs material systems. The concept, analogous to Bragg's law in high-resolution x-ray diffraction, relies on an analysis of the [001]-convolved reciprocal-space satellite peaks obtained from discrete Fourier transforms of individual STM images. Properly implemented, the technique enables local period measurements that reliably discriminate vertical fluctuations localized to within ˜5 superlattice repeats along the [001] growth direction and orthogonal, lateral fluctuations localized to within ˜40 nm along directions in the growth plane. While not as accurate as x-ray, the inherent, single-image measurement error associated with the method may be made as small as 0.1%, allowing the vertical or lateral period fluctuations contributing to inhomogeneous energy broadening and carrier localization in these structures to be pinpointed and quantified. The direct visualization of unexpectedly large, lateral period fluctuations on nanometer length scales in both strain-balanced systems supports a common understanding in terms of correlated interface roughness.

Predicting Chiral Nanostructures, Lattices and Superlattices in Complex Multicomponent Nanoparticle Self-Assembly

KAUST Repository

Hur, Kahyun

2012-06-13

"Bottom up" type nanoparticle (NP) self-assembly is expected to provide facile routes to nanostructured materials for various, for example, energy related, applications. Despite progress in simulations and theories, structure prediction of self-assembled materials beyond simple model systems remains challenging. Here we utilize a field theory approach for predicting nanostructure of complex and multicomponent hybrid systems with multiple types of short- and long-range interactions. We propose design criteria for controlling a range of NP based nanomaterial structures. In good agreement with recent experiments, the theory predicts that ABC triblock terpolymer directed assemblies with ligand-stabilized NPs can lead to chiral NP network structures. Furthermore, we predict that long-range Coulomb interactions between NPs leading to simple NP lattices, when applied to NP/block copolymer (BCP) assemblies, induce NP superlattice formation within the phase separated BCP nanostructure, a strategy not yet realized experimentally. We expect such superlattices to be of increasing interest to communities involved in research on, for example, energy generation and storage, metamaterials, as well as microelectronics and information storage. © 2012 American Chemical Society.

Tunable electronic transmission gaps in a graphene superlattice

International Nuclear Information System (INIS)

Lu Weitao; Wang Shunjin; Li Wen; Wang Yonglong; Jiang Hua

2012-01-01

The transmission in graphene superlattices with adjustable barrier height is investigated using transfer-matrix method. It is found that one could control the angular range of transmission by changing the ratio of incidence energy and barrier height. The transmission as a function of incidence energy has more than one gaps, due to the appearance of evanescent waves in different barriers. Accordingly, more than one conductivity minimums are induced. The transmission gaps could be controlled by adjusting the incidence angle, the barrier height, and the barrier number, which gives the possibility to construct an energy-dependent wavevector filter.

Dualband MW/LW Strained Layer Superlattice Focal Plane Arrays for Satellite-Based Wildfire Detection, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Infrared focal plane arrays (FPAs) based on Type-II strained layer superlattice (SLS) photodiodes have recently experienced significant advances. In Phase I we...

Luminescence dynamics in type-II GaAs/AlAs superlattices near the type-I to type-II crossover

DEFF Research Database (Denmark)

Langbein, Wolfgang Werner; Kalt, H.; Hvam, Jørn Märcher

1996-01-01

We report on a study of the time-resolved luminescence of type-II GaAs/AlAs superlattices near the type-I to type-II crossover. In spite of the slight type-II band alignment, the luminescence is dominated by the type-I transition. This is due to the inhomogeneous broadening of the type-I transiti...

Solid-state NMR of inorganic semiconductors.

Science.gov (United States)

Yesinowski, James P

2012-01-01

Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

High mobility half-metallicity in the (LaMnO3)2/(SrTiO3)8 superlattice

KAUST Repository

Cossu, Fabrizio

2013-01-28

First principles calculations have been performed to investigate the LaMnO3/SrTiO3 superlattice. Structural relaxation within the generalized gradient approximation results in no significant tiltings or rotations of oxygen octahedra, but in distinct distortions in the SrTiO3 region. Taking into account the onsite Coulomb interaction, we find that the Mn spins order ferromagnetically, in contrast to the antiferromagnetic state of bulk LaMnO3. Most importantly, the interface strain combined with charge transfer across the interface induces half-metallicity within the MnO2 layers. The superlattice is particulary interesting for spintronics applications because the half-metallic states are characterized by an extraordinary high mobility.

High mobility half-metallicity in the (LaMnO3)2/(SrTiO3)8 superlattice

KAUST Repository

Cossu, Fabrizio; Schwingenschlö gl, Udo; Singh, Nirpendra

2013-01-01

First principles calculations have been performed to investigate the LaMnO3/SrTiO3 superlattice. Structural relaxation within the generalized gradient approximation results in no significant tiltings or rotations of oxygen octahedra, but in distinct distortions in the SrTiO3 region. Taking into account the onsite Coulomb interaction, we find that the Mn spins order ferromagnetically, in contrast to the antiferromagnetic state of bulk LaMnO3. Most importantly, the interface strain combined with charge transfer across the interface induces half-metallicity within the MnO2 layers. The superlattice is particulary interesting for spintronics applications because the half-metallic states are characterized by an extraordinary high mobility.

Novel swirl-flow reactor for kinetic studies of semiconductor photocatalysis

NARCIS (Netherlands)

Ray, A.K; Beenackers, A.A C M

1997-01-01

A new two-phase swirl-flow monolithic-type reactor was designed to study the kinetics of heterogeneous photocatalytic processes on immobilized semiconductor catalysts. True kinetic rate constants for destruction of a textile dye were measured as a function of wavelength of light intensity and angle

Absence of confinement in (SrTiO3)/( SrTi0.8Nb0.2O3 ) superlattices

Science.gov (United States)

Bouzerar, G.; Thébaud, S.; Bouzerar, R.; Pailhès, S.; Adessi, Ch.

2018-03-01

The reduction of dimensionality is considered an efficient pathway to boost the performances of thermoelectric materials. Quantum confinement of the carriers is expected to induce large Seebeck coefficients (S ) and it also suppresses the thermal conductivity by increasing the phonon scattering processes. However, quantum confinement in superlattices is not always easy to achieve and needs to be carefully validated. In the past decade, large values of S have been measured in (SrTiO3)/(SrTi0.8Nb0.2O3 ) superlattices [H. Ohta et al., Nat. Mater. 6, 129 (2007), 10.1038/nmat1821; Y. Mune et al., Appl. Phys. Lett. 91, 192105 (2007), 10.1063/1.2809364]. In the δ -doped compound, the reported S was almost six times larger than that of the bulk material. This huge increase has been attributed to the two-dimensional carrier confinement in the doped regions. Here, we demonstrate that the experimental data are well explained quantitatively assuming delocalized electrons in both in-plane and growth directions. Moreover, we rule out the confined electron hypothesis whose signature would be the suppression of the Seebeck coefficient. This strongly suggests that the presupposed confinement picture in these superlattices is unlikely.

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

NARCIS (Netherlands)

Cecchi, Stefano; Zallo, Eugenio; Momand, Jamo; Wang, Ruining; Kooi, Bart J.; Verheijen, Marcel A.; Calarco, Raffaella

Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers.

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

NARCIS (Netherlands)

Cecchi, S.; Zallo, E.; Momand, J.; Wang, R.; Kooi, B.J.; Verheijen, M.A.; Calarco, R.

Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here

Optical coherent control in semiconductors

DEFF Research Database (Denmark)

Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

2001-01-01

of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

Semiconductor Physical Electronics

CERN Document Server

Li, Sheng

2006-01-01

Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(0 0 1)

Science.gov (United States)

Thumfart, L.; Carrete, J.; Vermeersch, B.; Ye, N.; Truglas, T.; Feser, J.; Groiss, H.; Mingo, N.; Rastelli, A.

2018-01-01

The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured using both time-domain thermoreflectance and the differential 3ω method. The superlattices were grown by molecular beam epitaxy on Ge(0 0 1) substrates. Crystal quality and structural information were investigated by x-ray diffractometry and transmission electron microscopy. The influence of segregation during growth on the composition profiles was modeled using the experimental growth temperatures and deposition rates. Those profiles were then employed to obtain parameter-free theoretical estimates of the thermal conductivity by combining first-principles calculations, Boltzmann transport theory and phonon Green’s functions. Good agreement between theory and experiment is observed. The thermal conductivity shows a strong dependence on the composition and the thickness of the samples. Moreover, the importance of the composition profile is reflected in the fact that the thermal conductivity of the superlattices is considerably lower than predicted values for alloys with the same average composition and thickness. Measurement on different samples with the same Si layer thickness and number of periods, but different Ge layer thickness, show that the thermal resistance is only weakly dependent on the Ge layers. We analyze this phenomenon based on the first-principles mode, and build an approximate parametrization showing that, in this regime, the resistivity of a SL is roughly linear on the amount of Si.

Study of surface modifications for improved selected metal (II-VI) semiconductor based devices

Science.gov (United States)

Blomfield, Christopher James

Metal-semiconductor contacts are of fundamental importance to the operation of all semiconductor devices. There are many competing theories of Schottky barrier formation but as yet no quantitative predictive model exists to adequately explain metal-semiconductor interfaces. The II-VI compound semiconductors CdTe, CdS and ZnSe have recently come to the fore with the advent of high efficiency photovoltaic cells and short wavelength light emitters. Major problems still exist however in forming metal contacts to these materials with the desired properties. This work presents results which make a significant contribution to the theory of metal/II-VI interface behaviour in terms of Schottky barriers to n-type CdTe, CdS and ZnSe.Predominantly aqueous based wet chemical etchants were applied to the surfaces of CdTe, CdS and ZnSe which were subsequently characterised by X-ray photoelectron spectroscopy. The ionic nature of these II-VI compounds meant that they behaved as insoluble salts of strong bases and weak acids. Acid etchants induced a stoichiometric excess of semiconductor anion at the surface which appeared to be predominantly in the elemental or hydrogenated state. Alkaline etchants conversely induced a stoichiometric excess of semiconductor cation at the surface which appeared to be in an oxidised state.Metal contacts were vacuum-evaporated onto these etched surfaces and characterised by current-voltage and capacitance-voltage techniques. The surface preparation was found to have a clear influence upon the electrical properties of Schottky barriers formed to etched surfaces. Reducing the native surface oxide produced near ideal Schottky diodes. An extended study of Au, Ag and Sb contacts to [mathematical formula] substrates again revealed the formation of several discrete Schottky barriers largely independent of the metal used; for [mathematical formula]. Deep levels measured within this study and those reported in the literature led to the conclusion that Fermi

Investigation of the structural and electronic properties of quantum well superlattices made of CuCl, CuBr and CuI

International Nuclear Information System (INIS)

Badi, F.; Louhibi, S.; Aced, M.R.; Mehnane, N.; Sekkal, N.

2008-05-01

This paper reports first principle investigations of structural and electronic properties of both bulk and superlattice (SL) systems of cuprous halides. The obtained structural data for bulks compares well with literature while data for SL is not compared because unavailable (to our knowledge). The electronic structure of bulks and also of (001) and (110) growth axis superlattices (SLs) are calculated and it is shown that at the reverse of the IV-IV and III-V systems, the (110) growth axis impacts the electronic structure which indicates a great influence of the d-orbital. (author)

Fundamentals of semiconductor devices

CERN Document Server

Lindmayer, Joseph

1965-01-01

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

Exploring graphene superlattices: Magneto-optical properties

Science.gov (United States)

Duque, C. A.; Hernández-Bertrán, M. A.; Morales, A. L.; de Dios-Leyva, M.

2017-02-01

We present a detailed study of magnetic subbands, wave functions, and transition strengths for graphene superlattices (SLs) subject to a perpendicular magnetic field. It is shown that, for a weak magnetic field, the flat subbands of a SL exhibiting extra Dirac points are grouped into subsets, each of which consists of a singlet subband and a nearly degenerate doublet subband, and one nearly degenerate triplet subband. It was found that the wave functions corresponding to a singlet or to a doublet are always located around the image in real space of the central or extra Dirac points in k-space. The latter properties were explained by assuming that the electron motion is quasi-classical. Our study revealed that, for an intermediate field, the general characteristics of the wave functions are very similar to those of the pristine graphene, while for weak field, their behavior is drastically different. The latter is characterized by rapid oscillations which were understood using the solutions provided by the formalism of Luttinger-Kohn. The study on transition strengths allows us to obtain, for SLs with extra Dirac points in a weak magnetic field and different polarizations, the conditions under which transitions between multiplets are approximately allowed. It was shown that these conditions correspond to an unusual selection rule that is broken when the magnetic field intensity increases from weak to an intermediate value.

Superconductivity in La1.56Sr0.44CuO4/La2CuO4 Superlattices

International Nuclear Information System (INIS)

Bozovic, I.; Suter, A.; Morenzoni, E.; Prokscha, T.; Luetkens, H.; Wojek, B.M.; Logvenov, G.; Gozar, A.

2011-01-01

Superlattices of the repeated structure La 1.56 Sr 0.44 CuO 4 /La 2 CuO 4 (LSCO-LCO), where none of the constituents is superconducting, show a superconducting transition of T(prime) c 25 K. In order to elucidate the nature of the superconducting state we have performed a low-energy μSR study. By applying a magnetic field parallel (Meissner state) and perpendicular (vortex state) to the film planes, we could show that superconductivity is sheet like, resulting in a very anisotropic superconducting state. This result is consistent with a simple charge-transfer model, which takes into account the layered structure and the difference in the chemical potential between LCO and LSCO, as well as Sr interdiffusion. Using a pancake-vortex model we could estimate a strict upper limit of the London penetration depth to 380 nm in these superlattices. The temperature dependence of the muon depolarization rate in field cooling experiments is very similar to what is observed in intercalated BSCCO and suggests that vortex-vortex interaction is dominated by electromagnetic coupling but negligible Josephson interaction.

Atomic force microscope and scanning tunneling microscope studies of superlattices and density waves in Fe doped NbSe2, TaSe2, TaS2 and in NbSe3 doped with Fe, Co, Cr, and V

International Nuclear Information System (INIS)

Coleman, R.V.; Dai, Z.; Gong, Y.; Slough, C.G.; Xue, Q.

1994-01-01

Results of atomic force microscope (AFM) and scanning tunneling microscope (STM) studies of superlattices and long-range modulations induced by impurities in transition metal chalcogenides are presented. Superlattices formed by Fe intercalation into the van der Waals gaps of 2H--NbSe 2 , 2H--TaSe 2 and 2H--TaS 2 show ordered occupation of the octahedral holes and STM spectroscopy shows density-wave energy gaps existing in the antiferromagnetic phases. In NbSe 3 , interstitial impurities such as Fe, Co, Cr, and V induce long-range modulated structures that can be detected at room temperature with AFM scans. These modulations modify the charge-density wave structure forming at low temperature and STM spectroscopy has been used to measure these changes

ULTRATHIN SILICON MEMBRANES TO STUDY SUPERCURRENT TRANSPORT IN CRYSTALLINE SEMICONDUCTORS

NARCIS (Netherlands)

VANHUFFELEN, WM; DEBOER, MJ; KLAPWIJK, TM

1991-01-01

We have developed a two-step anisotropic etching process to fabricate thin silicon membranes, used to study supercurrent transport in semiconductor coupled weak links. The process uses a shallow BF2+ implantation, and permits easy control of membrane thickness less-than-or-equal-to 100 nm.

Bulletin of Materials Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

Abstract. The purpose of the present paper is to report a study of tunneling of electrons through semiconductor superlattices (SSL); specially, we have analysed diverse features of transmission coefficient of SSL. The SSL we have considered is Ga0.7Al0.3As–GaAs which has been drawing considerable attention during the ...

Tuning the electronic structure of SrTiO3/SrFeO3−x superlattices via composition and vacancy control

Directory of Open Access Journals (Sweden)

Robert F. Berger

2014-04-01

Full Text Available Using density functional theory-based calculations, we explore the effects of oxygen vacancies and epitaxial layering on the atomic, magnetic, and electronic structure of (SrTiO3n(SrFeO3−x1 superlattices. While structures without oxygen vacancies (x = 0 possess small or non-existent band gaps and ferromagnetic ordering in their iron layers, those with large vacancy concentrations (x = 0.5 have much larger gaps and antiferromagnetic ordering. Though the computed gaps depend numerically on the delicate energetic balance of vacancy ordering and on the value of Hubbard U eff used in the calculations, we demonstrate that changes in layering can tune the band gaps of these superlattices below that of SrTiO3 (3.2 eV by raising their valence band maxima. This suggests the possibility that these superlattices could absorb in the solar spectrum, and could serve as water-splitting photocatalysts.