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Sample records for semiconductor processing apparatus

  1. Semiconductor processing apparatus with compact free radical source

    NARCIS (Netherlands)

    Kovalgin, Alexeij Y.; Aarnink, Antonius A.I.

    2013-01-01

    A semiconductor processing apparatus (1), comprising: a substrate processing chamber (158), defining a substrate support location (156) at which a generally planar semiconductor substrate (300) is supportable; and at least one free radical source (200), including: a precursor gas source (250); an

  2. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  3. An apparatus and process for forming P-N junction semiconductor units

    International Nuclear Information System (INIS)

    1975-01-01

    It is stated that although many methods of ion implantation have been developed it seems that the method of 'hot implantation' is still in its infancy. In this method the target is preheated in an ion implantor during implantation of ions, leading to radiation enhanced diffusion. The apparatus described comprises the following: (i) a bell jar evacuated to -3 Torr containing four electrodes arranged in two pairs, one electrode of the first pair being in the form of a mesh; (ii) a source of high pulsating direct voltage connected to the first pair of electrodes, with the mesh electrode negatively poled, to ionise the rarified air in the bell jar and accelerate the resulting positive N and O ions; (iii) an RF voltage source connected to the other pair of electrodes to facilitate the ionisation; (iv) a dopant semiconductor body, heated by a wire wound heater, placed underneath the mesh electrode so that the accelerated ions bombard the dopant layer through the mesh electrode and implant dopant atoms in the semiconductor body. The distance between the mesh electrode and the surface of the dopant-coated semiconductive body, should be about 5mm. The mesh electrode consists of a sputtering-resistant refractory metal, and includes a cooling system. The dopant-coated semiconductive body is placed on a ceramic plate in the bell jar, and the power supply line of the heater is insulated from the voltage applied to the negative electrode, which is earthed, by using an insulated heater transformer combined with an autotransformer. The ceramic plate is attached to a plate on which the heater is wound, and the temperature of the heating should be variable between 400 0 and 500 0 C. A process for forming P-N junction semiconductor units using this apparatus is described. (U.K.)

  4. Magnetic filter apparatus and method for generating cold plasma in semiconductor processing

    Science.gov (United States)

    Vella, M.C.

    1996-08-13

    Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.

  5. Apparatus for testing semiconductor devices and capacitors

    International Nuclear Information System (INIS)

    York, R.A.

    1984-01-01

    An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

  6. Radioactive waste processing apparatus

    Science.gov (United States)

    Nelson, R.E.; Ziegler, A.A.; Serino, D.F.; Basnar, P.J.

    1985-08-30

    Apparatus for use in processing radioactive waste materials for shipment and storage in solid form in a container is disclosed. The container includes a top, and an opening in the top which is smaller than the outer circumference of the container. The apparatus includes an enclosure into which the container is placed, solution feed apparatus for adding a solution containing radioactive waste materials into the container through the container opening, and at least one rotatable blade for blending the solution with a fixing agent such as cement or the like as the solution is added into the container. The blade is constructed so that it can pass through the opening in the top of the container. The rotational axis of the blade is displaced from the center of the blade so that after the blade passes through the opening, the blade and container can be adjusted so that one edge of the blade is adjacent the cylindrical wall of the container, to insure thorough mixing. When the blade is inside the container, a substantially sealed chamber is formed to contain vapors created by the chemical action of the waste solution and fixant, and vapors emanating through the opening in the container. The chamber may be formed by placing a removable extension over the top of the container. The extension communicates with the apparatus so that such vapors are contained within the container, extension and solution feed apparatus. A portion of the chamber includes coolant which condenses the vapors. The resulting condensate is returned to the container by the force of gravity.

  7. Pyrolysis process and apparatus

    Science.gov (United States)

    Lee, Chang-Kuei

    1983-01-01

    This invention discloses a process and apparatus for pyrolyzing particulate coal by heating with a particulate solid heating media in a transport reactor. The invention tends to dampen fluctuations in the flow of heating media upstream of the pyrolysis zone, and by so doing forms a substantially continuous and substantially uniform annular column of heating media flowing downwardly along the inside diameter of the reactor. The invention is particularly useful for bituminous or agglomerative type coals.

  8. Apparatus for sectioning demountable semiconductor samples

    Science.gov (United States)

    Sopori, B.L.; Wolf, A.

    1984-01-01

    Apparatus for use during polishing and sectioning operations of a ribbon sample is described. The sample holder includes a cylinder having an axially extending sample cavity terminated in a first funnel-shaped opening and a second slot-like opening. A spring-loaded pressure plunger is located adjacent the second opening of the sample cavity for frictional engagement of the sample cavity. A heat softenable molding medium is inserted in the funnel-shaped opening, to surround the sample. After polishing, the heater is energized to allow draining of the molding medium from the sample cavity. During manual polishing, the second end of the sample holder is inserted in a support ring which provides mechanical support as well as alignment of the sample holder during polishing. A gauge block for measuring the protrusion of a sample beyond the second wall of the holder is also disclosed.

  9. Testing of defects in Si semiconductor apparatus by using single-photon detection

    International Nuclear Information System (INIS)

    Zhongliang, Pan; Ling, Chen; Guangju, Chen

    2013-01-01

    The failure analysis of semiconductor apparatus is very needed for ensuring product quality, which can find several types of defects in the semiconductor apparatus. A new testing method for the defects in Si semiconductor apparatus is presented in this paper, the method makes use of photon emissions to find out the failure positions or failure components by taking advantage of the infrared photo emission characteristics of semiconductor apparatus. These emitted photons carry the information of the apparatus structure. If there are defects in the apparatus, these photons can help in understanding the apparatus properties and detecting the defects. An algorithm for the generation of circuit input vectors are presented in this paper to enhance the strength of the emitted photons for the given components in the semiconductor apparatus. The multiple-valued logic, the static timing analysis and path sensitizations, are used in the algorithm. A lot of experimental results for the Si semiconductor apparatus show that many types of defects such as contact spiking and latchup failure etc., can be detected accurately by the method proposed in this paper

  10. Modeling of column apparatus processes

    CERN Document Server

    Boyadjiev, Christo; Boyadjiev, Boyan; Popova-Krumova, Petya

    2016-01-01

    This book presents a new approach for the modeling of chemical and interphase mass transfer processes in industrial column apparatuses, using convection-diffusion and average-concentration models. The convection-diffusion type models are used for a qualitative analysis of the processes and to assess the main, small and slight physical effects, and then reject the slight effects. As a result, the process mechanism can be identified. It also introduces average concentration models for quantitative analysis, which use the average values of the velocity and concentration over the cross-sectional area of the column. The new models are used to analyze different processes (simple and complex chemical reactions, absorption, adsorption and catalytic reactions), and make it possible to model the processes of gas purification with sulfur dioxide, which form the basis of several patents.

  11. Radioactive decontamination apparatus and process

    International Nuclear Information System (INIS)

    Jackson, O.L.

    1983-01-01

    Apparatus for removing radioactive contamination from metal objects is disclosed, consisting of three of three separate pieces. The first is an electro- polishing tank, pump and filter assembly, ventilation duct and filter assembly, and DC power supply. The second is a rinse tank and a pump and filter assembly therefor. The third is a divot crane. The electro-polishing tank assembly and the rinse tank assembly are each separately mounted on pallets to facilitate moving. The filter systems of the electro-polishing tank and the rinse tank are designed to remove the radioactive contamination from the fluids in those tanks. Heavy items or highly contaminated items are handled with the divot crane constructed of stainless steel. The electro- polishing tank and the rinse tank are also made of stainless steel. The ventilation system on the electro- polishing tank exhausts acid fumes resulting from the tank heaters and the electro-polishing process. Inside the electro-polishing tank are two swinging arms that carry two stainless steel probes that hang down in the electrolyte fluid. These negative DC probes and are electrically isolated from the tank and the rest of the system. Across the top center of the tank is a copper pipe, which is also electrically isolated from the tank. This is the positive side of the DC system. To decontaminate a metal object, it is suspended from the positive copper pipe, with good electrical contact, into the electrolyte fluid. The negative probes are then moved on their swinging arms to a close proximity to the object being decontaminated, without making contact

  12. Fundamentals of semiconductor processing technology

    CERN Document Server

    El-Kareh, Badih

    1995-01-01

    The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac­ turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil­ ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech­ n...

  13. Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

    International Nuclear Information System (INIS)

    Minaev, V P

    2005-01-01

    High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

  14. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  15. Process and apparatus for cracking petroleum, etc

    Energy Technology Data Exchange (ETDEWEB)

    1931-04-25

    Process for catalytic cracking of petroleum and similar material at normal pressure, characterized by the oil vaporized in a vaporizer being treated in a first catalyst-chamber and in a separator attached to it, light constituents being separated, and then its being run into a second apparatus-group (vaporizer, catalyst-chamber, and separator), further groups following in series, whereby the catalyst works in a separate catalyst apparatus with ever-increasing activity time on the always lesser but always more difficult to crack material, so that in the whole apparatus a methodical cracking process is effected.

  16. Processing of insulators and semiconductors

    Science.gov (United States)

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  17. Process and apparatus for conversion of biomass

    NARCIS (Netherlands)

    Bakker, R.R.C.; Hazewinkel, J.H.O.; Groenestijn, van J.W.

    2006-01-01

    The invention is directed to a process for the conversion of biomass, in particular lignocellulose-containing biomass into a product that may be further processes in a fermentation step. The invention is further directed to apparatus suitable for carrying out such processes. According to the

  18. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  19. Construction apparatus for thermochemical hydrogen production process

    Energy Technology Data Exchange (ETDEWEB)

    Kubo, S.; Nakajima, H.; Higashi, S.; Onuki, K.; Akino, S.S.N. [Japan Atomic Energy Research Inst., Ibaraki-ken (Japan). Nuclear Heat Utilization Engineering Lab

    2001-06-01

    Studies have been carried out at the Japan Atomic Energy Research Institute (JAERI) on hydrogen production through thermochemical processes such as water-splitting. These studies are classified with iodine-sulphur cycle studies using heat from high temperature gas-cooled reactors. An experimental apparatus was constructed with fluorine resin, glass and quartz. It can produce hydrogen at a rate of 50 litres per hour. Electricity provides the heat required for the operation. The closed chemical process requires special control techniques. The process flow diagram for the apparatus was designed based on the results of previous studies including one where hydrogen production was successfully achieved at a rate of one liter per hour for 48 hours. Experimental operations under atmospheric pressure will be carried out for the next four years to develop the process. The data will be used in the next research and development programs aimed at designing a bench-scale apparatus. 7 refs., 1 tab., 8 figs.

  20. Process and apparatus for conversion of biomass

    NARCIS (Netherlands)

    Bakker, R.R.C.; Hazewinkel, J.H.O.; Groenestijn, van J.W.

    2006-01-01

    The invention is directed to a process for the conversion of cellulosic biomass, in particular lignocellulose-containing biomass into fermentable sugars. The invention is further directed to apparatus suitable for carrying out such processes. According to the invention biomass is converted into

  1. Apparatus and process for controlling fluidized beds

    Science.gov (United States)

    Rehmat, Amirali G.; Patel, Jitendra G.

    1985-10-01

    An apparatus and process for control and maintenance of fluidized beds under non-steady state conditions. An ash removal conduit is provided for removing solid particulates from a fluidized bed separate from an ash discharge conduit in the lower portion of the grate supporting such a bed. The apparatus and process of this invention is particularly suitable for use in ash agglomerating fluidized beds and provides control of the fluidized bed before ash agglomeration is initiated and during upset conditions resulting in stable, sinter-free fluidized bed maintenance.

  2. Process and apparatus for controlling control rods

    International Nuclear Information System (INIS)

    Gebelin, B.; Couture, R.

    1987-01-01

    This process and apparatus is characterized by 2 methods, for examination of cluster of nuclear control rods. Foucault current analyzer which examines fraction by fraction all the control rods. This examination is made by rotation of the cluster. Doubtful rods are then analysed by ultrasonic probe [fr

  3. Diluent substitution process and apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Scott, J.E.; McDougall, D.W.; Holcek, R.G.

    1990-07-03

    An objective of this invention is to provide a process for the treatment of a heavy oil production stream which may contain bitumens, sand, volatiles, and water, in which the amount of diluent required by the process is reduced compared with an equivalent conventional process. The process of the invention involves initially removing sand and water from the heavy oil production stream and adding a first diluent to the stream to reduce the density and viscosity of the heavy oil. The first diluent can be any miscible stream lighter than the heavy oil but relatively involatile. A typical diluent is stabilized condensate (or pentanes plus) or a light refinery stream such as naphtha. The heavy oil is then treated to remove light components including methane and CO{sub 2} to reduce the vapor pressure of the stream. A liquefied petroleum gas (LPG) stream is then injected into the heavy oil production stream to lower the viscosity of the stream and form a sales oil stream. Injection of the LPG allows a reduction in the amount of the first diluent, and can also lower the oil viscosity to a greater degree than can addition of an equivalent amount of the first diluent. Since LPG diluent is less expensive than the first diluent, the overall treatment cost is also reduced. 1 fig.

  4. Apparatus and method for radiation processing of materials

    International Nuclear Information System (INIS)

    Neuberg, W.B.; Luniewski, R.

    1983-01-01

    A method and apparatus for radiation degradation processing of polytetrafluoroethylene makes use of a simultaneous irradiation, agitation and cooling. The apparatus is designed to make efficent use of radiation in the processing. (author)

  5. Apparatus for storing and processing fissionable substances

    International Nuclear Information System (INIS)

    Dubovsky, B.G.; Bogatyrev, V.K.; Vladykov, G.M.; Sviridenko, V.Y.

    1974-01-01

    An apparatus is described for storing and processing fissionable substances in which there is provided a protective shield in the form of a layer of neutron absorbing material located in direct proximity to a vessel with a fissionable substance contained therein. The layer of neutron retarding material according to the present invention has alternating projections and depressions facing the layer of neutron-absorbing material. (author)

  6. Method and apparatus for processing algae

    Science.gov (United States)

    Chew, Geoffrey; Reich, Alton J.; Dykes, Jr., H. Waite; Di Salvo, Roberto

    2012-07-03

    Methods and apparatus for processing algae are described in which a hydrophilic ionic liquid is used to lyse algae cells. The lysate separates into at least two layers including a lipid-containing hydrophobic layer and an ionic liquid-containing hydrophilic layer. A salt or salt solution may be used to remove water from the ionic liquid-containing layer before the ionic liquid is reused. The used salt may also be dried and/or concentrated and reused. The method can operate at relatively low lysis, processing, and recycling temperatures, which minimizes the environmental impact of algae processing while providing reusable biofuels and other useful products.

  7. Process and apparatus for distilling bituminous minerals

    Energy Technology Data Exchange (ETDEWEB)

    Veyrier, J A

    1922-03-27

    This process of distillation of bituminous minerals and particularly bituminous limestone is characterized by the fact that the minerals are introduced into the retort where they stand only the temperature necessary to distill the water and lighter oils that they contain and then are drawn out into the hearth and serve for heating the retort. The apparatus is characterized by the fact that the retort has a screw conveyor, placed in the flue of the hearth, supplied with a chamber for evacuation below this hearth.

  8. Foam generator and viscometer apparatus and process

    Science.gov (United States)

    Reed, Troy D.; Pickell, Mark B.; Volk, Leonard J.

    2004-10-26

    An apparatus and process to generate a liquid-gas-surfactant foam and to measure its viscosity and enable optical and or electronic measurements of physical properties. The process includes the steps of pumping selected and measured liquids and measured gases into a mixing cell. The mixing cell is pressurized to a desired pressure and maintained at a desired pressure. Liquids and gas are mixed in the mixing cell to produce a foam of desired consistency. The temperature of the foam in the mixing cell is controlled. Foam is delivered from the mixing cell through a viscometer under controlled pressure and temperature conditions where the viscous and physical properties of the foam are measured and observed.

  9. Rapid thermal processing of semiconductors

    CERN Document Server

    Borisenko, Victor E

    1997-01-01

    Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions They thoroughly cover the work of international investigators in the field

  10. Photoexcitation-induced processes in amorphous semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [School of Engineering and Logistics, Charles Darwin University, Darwin, NT 0909 (Australia)]. E-mail: jai.singh@cdu.edu.au

    2005-07-30

    Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories.

  11. Photoexcitation-induced processes in amorphous semiconductors

    International Nuclear Information System (INIS)

    Singh, Jai

    2005-01-01

    Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories

  12. Fundamentals of semiconductor manufacturing and process control

    CERN Document Server

    May, Gary S

    2006-01-01

    A practical guide to semiconductor manufacturing from process control to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Control covers all issues involved in manufacturing microelectronic devices and circuits, including fabrication sequences, process control, experimental design, process modeling, yield modeling, and CIM/CAM systems. Readers are introduced to both the theory and practice of all basic manufacturing concepts. Following an overview of manufacturing and technology, the text explores process monitoring methods, including those that focus on product wafers and those that focus on the equipment used to produce wafers. Next, the text sets forth some fundamentals of statistics and yield modeling, which set the foundation for a detailed discussion of how statistical process control is used to analyze quality and improve yields. The discussion of statistical experimental design offers readers a powerful approach for systematically varying controllable p...

  13. Ultrasonic stir welding process and apparatus

    Science.gov (United States)

    Ding, R. Jeffrey (Inventor)

    2009-01-01

    An ultrasonic stir welding device provides a method and apparatus for elevating the temperature of a work piece utilizing at least one ultrasonic heater. Instead of relying on a rotating shoulder to provide heat to a workpiece an ultrasonic heater is utilized to provide ultrasonic energy to the workpiece. A rotating pin driven by a motor assembly performs the weld on the workpiece. A handheld version can be constructed as well as a fixedly mounted embodiment.

  14. Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas

    Science.gov (United States)

    Helal, Yaser H.

    Plasmas used for manufacturing processes of semiconductor devices are complex and challenging to characterize. The development and improvement of plasma processes and models rely on feedback from experimental measurements. Current diagnostic methods are not capable of measuring absolute densities of plasma species with high resolution without altering the plasma, or without input from other measurements. At pressures below 100 mTorr, spectroscopic measurements of rotational transitions in the submillimeter/terahertz (SMM) spectral region are narrow enough in relation to the sparsity of spectral lines that absolute specificity of measurement is possible. The frequency resolution of SMM sources is such that spectral absorption features can be fully resolved. Processing plasmas are a similar pressure and temperature to the environment used to study astrophysical species in the SMM spectral region. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied in the laboratory and their absorption spectra have been cataloged or are in the literature for the purpose of astrophysical study. Recent developments in SMM devices have made its technology commercially available for applications outside of specialized laboratories. The methods developed over several decades in the SMM spectral region for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500 - 750 GHz radiation through a commercial inductively coupled plasma

  15. Microeconomics of process control in semiconductor manufacturing

    Science.gov (United States)

    Monahan, Kevin M.

    2003-06-01

    Process window control enables accelerated design-rule shrinks for both logic and memory manufacturers, but simple microeconomic models that directly link the effects of process window control to maximum profitability are rare. In this work, we derive these links using a simplified model for the maximum rate of profit generated by the semiconductor manufacturing process. We show that the ability of process window control to achieve these economic objectives may be limited by variability in the larger manufacturing context, including measurement delays and process variation at the lot, wafer, x-wafer, x-field, and x-chip levels. We conclude that x-wafer and x-field CD control strategies will be critical enablers of density, performance and optimum profitability at the 90 and 65nm technology nodes. These analyses correlate well with actual factory data and often identify millions of dollars in potential incremental revenue and cost savings. As an example, we show that a scatterometry-based CD Process Window Monitor is an economically justified, enabling technology for the 65nm node.

  16. Rapid thermal processing and beyond applications in semiconductor processing

    CERN Document Server

    Lerch, W

    2008-01-01

    Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging a

  17. Methods and apparatuses for detection of radiation with semiconductor image sensors

    Science.gov (United States)

    Cogliati, Joshua Joseph

    2018-04-10

    A semiconductor image sensor is repeatedly exposed to high-energy photons while a visible light obstructer is in place to block visible light from impinging on the sensor to generate a set of images from the exposures. A composite image is generated from the set of images with common noise substantially removed so the composite image includes image information corresponding to radiated pixels that absorbed at least some energy from the high-energy photons. The composite image is processed to determine a set of bright points in the composite image, each bright point being above a first threshold. The set of bright points is processed to identify lines with two or more bright points that include pixels therebetween that are above a second threshold and identify a presence of the high-energy particles responsive to a number of lines.

  18. Calculation of period processing solution syrup in vacuum apparatus

    Directory of Open Access Journals (Sweden)

    A. A. Slavyanskii

    2016-01-01

    Full Text Available Important and crucial element in the management of the technological flow of production of sugar product standards is the period of time the enrichment of massecuite, since its neutralization in the process of crystal formation in vacuum apparatus, excess sugar solution. Although currently proposed and implemented in the industry, including as a front-end accompany the process, a number of ways in the real world sugar production in many cases have to resort to the services of an experienced operator. It is obvious that in any case it is necessary to have a surround-dependent glucose solution data on time for the excess sugar solution into the vacuum apparatus. With regard to the period of the enrichment of depleted sucrose solution are entered into this substance excess sucrose solution, it should be noted that this problem is theoretically still insufficiently developed. It is obvious that for practical purposes it is desirable to have a simple and convenient for engineering calculation of sugar processing time dependencies of the specified volume of water from the operating parameters of the process (the required concentration of sucrose, temperature of the solution stirring. The problem is the quantitative analysis of sucrose crystallization in vacuum apparatus, including the timing of enrichment solution to the excess syrup, period of time processing massecuite total this apparatus has been investigated in many works. However, due to its importance to the task of obtaining commercial sugar high standards this issue required further in-depth examination. In the article to support the enrichment process solution sucrose due to neutralize this solvent system in vacuum apparatus, from the standpoint of diffusion theory provides a more reasonable compared to known so far, quantitative analysis of this process. Where as sucrose crystals team are considering a system of balls, uniformly distributed in vacuum apparatus. On the basis of the solution

  19. Process and apparatus for the conversion of biomass

    NARCIS (Netherlands)

    Bakker, R.R.C.; Hazewinkel, J.H.O.; Groenestijn, van J.W.

    2008-01-01

    The invention is directed to a process for the conversion of cellulosic biomass, in particular lignocellulose-containing biomass into fermentable sugars. The invention is further directed to apparatus suitable for carrying out such processes. According to the invention biomass is converted into

  20. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

    Science.gov (United States)

    Horn, Kevin M [Albuquerque, NM

    2008-05-20

    A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

  1. Process and apparatus for decontaminating air

    International Nuclear Information System (INIS)

    Reynolds, W.D.

    1993-01-01

    An apparatus for irradiating a contaminated air stream emanating from contaminated sources which contain mixtures of one or more volatile toxic and hazardous organic solvents or petroleum product vapors with ultraviolet wave energy below 200 nm is described comprising: a first means for passing the contaminated air stream via a tube into an enclosed empty air flow duct to allow free flow of said contaminated air stream; a second means for introducing a secondary fresh air stream into an inlet of said first means to dilute and maintain the contaminated air stream at a predetermined concentration level; a means for measuring a flow rate of said contaminated air stream; said air duct containing at least a first and second residence chambers separated by a wall divider; said divider containing at least one opening in which is mounted at least one centrally located ultraviolet wave energy source extending into said air stream to allow said contaminated air stream to pass around and in close contact with said wave energy source, wherein said contaminated air stream is irradiated by said wave energy source; an analyzer means for conducting on-line real time analysis of said diluted contaminated air stream in said first residence chamber, said analyzer means being capable of analyzing any residual contaminated mixtures in an effluent air stream from said second residence chamber; whereby said ultraviolet wave energy source functions to generate oxygen atom free radicals, other free radicals, ions, and ozone to react with the contaminated air strewn to produce unwanted acid gases, and wherein said effluent air stream containing the unwanted acid gases, being passed from said second residence chamber, can be disposed of in any manner known to the art

  2. Apparatus and process for passivating an SRF cavity

    Science.gov (United States)

    Myneni, Ganapati Rao; Wallace, John P

    2014-12-02

    An apparatus and process for the production of a niobium cavity exhibiting high quality factors at high gradients is provided. The apparatus comprises a first chamber positioned within a second chamber, an RF generator and vacuum pumping systems. The process comprises placing the niobium cavity in a first chamber of the apparatus; thermally treating the cavity by high temperature in the first chamber while maintaining high vacuum in the first and second chambers; and applying a passivating thin film layer to a surface of the cavity in the presence of a gaseous mixture and an RF field. Further a niobium cavity exhibiting high quality factors at high gradients produced by the method of the invention is provided.

  3. NICE3 SO3 Cleaning Process in Semiconductor Manufacturing

    International Nuclear Information System (INIS)

    Blazek, Steve

    1999-01-01

    This fact sheet explains how Anon, Inc., has developed a novel method of removing photoresist--a light-sensitive material used to produce semiconductor wafers for computers--from the computer manufacturing process at reduced cost and greater efficiency. The new technology is technically superior to existing semiconductor cleaning methods and results in reduced use of hazardous chemicals

  4. Processes And Apparatus For Inhibiting Membrane Bio-fouling

    KAUST Repository

    Missimer, Thomas M.

    2012-12-20

    Certain embodiments are directed to a process and apparatus for cleaning and/or regeneration of permeable or semipermeable membranes comprising modulating pressure of a feed stream feeding the permeable or semipermeable membrane and providing intermittent pressure pulses for cleaning and/or regeneration of the permeable or semipermeable membrane.

  5. Processes And Apparatus For Inhibiting Membrane Bio-fouling

    KAUST Repository

    Missimer, Thomas M.; Ng, Kim Choon; Amy, Gary

    2012-01-01

    Certain embodiments are directed to a process and apparatus for cleaning and/or regeneration of permeable or semipermeable membranes comprising modulating pressure of a feed stream feeding the permeable or semipermeable membrane and providing intermittent pressure pulses for cleaning and/or regeneration of the permeable or semipermeable membrane.

  6. Basic processes and scintillator and semiconductor detectors

    International Nuclear Information System (INIS)

    Bourgeois, C.

    1994-01-01

    In the following course, the interaction of heavy charged particles, electrons and Γ with matter is represented. Two types of detectors are studied, organic and inorganic scintillators and semiconductors. The signal formation is analysed. (author). 13 refs., 48 figs., 5 tabs

  7. Process and apparatus for determining molecular spectra

    International Nuclear Information System (INIS)

    Boesl, U.; Neusser, H.J.; Schlag, E.W.

    1984-01-01

    A process for determining molecular spectra in unseparated mixtures, in particular unseparated isotopic mixtures, which comprises allowing said mixture to successively flow through a photoreactor which is irradiated by an adjustable-wavelength laser and then through a mass spectrometer wherein the concentration of particles of specified mass is determined by variation of the wavelength of the laser or variation of the mass setting of the mass spectrometer in such a manner that a two-dimensional spectrum results having the parameters of wavelength and mass

  8. Apparatus and process for deuterium exchange

    International Nuclear Information System (INIS)

    Ergenc, M.S.

    1976-01-01

    The deuterium exchange plant is combined with an absorption refrigeration plant in order to improve the exchange process and to produce refrigeration. The refrigeration plant has a throttling means for expanding and cooling a portion of the liquid exchange medium separated in the exchange plant as well as an evaporator, in which the said liquid exchange medium is brought into heat exchange with a cold consumer device, absorption means for forming a solution of the used exchange medium and fresh water and a pump for pumping the solution into the exchange plant

  9. Process and apparatus for destructive distillation

    Energy Technology Data Exchange (ETDEWEB)

    Dalin, D; Hedbaeck, T J

    1951-01-10

    A process of distilling wood, coal, shale, and like materials in an externally heated retort, consists of heating the retort by burning fuel in a combustion chamber completely or partly surrounding the retort and passing a heat-absorbing medium through ducts which are mounted in or adjacent the greater part of the length of the retort walls which are so arranged as to effect a greater degree of heat extraction at one part of the retort than at another part of the retort. The zones of different heat extraction being related to the heat developed in the combustion chamber maintains the most favourable distillation temperature in all parts of the retort.

  10. Optical cavity furnace for semiconductor wafer processing

    Science.gov (United States)

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  11. Processes, data structures, and apparatuses for representing knowledge

    Science.gov (United States)

    Hohimer, Ryan E [West Richland, WA; Thomson, Judi R [Guelph, CA; Harvey, William J [Richland, WA; Paulson, Patrick R [Pasco, WA; Whiting, Mark A [Richland, WA; Tratz, Stephen C [Richland, WA; Chappell, Alan R [Seattle, WA; Butner, R Scott [Richland, WA

    2011-09-20

    Processes, data structures, and apparatuses to represent knowledge are disclosed. The processes can comprise labeling elements in a knowledge signature according to concepts in an ontology and populating the elements with confidence values. The data structures can comprise knowledge signatures stored on computer-readable media. The knowledge signatures comprise a matrix structure having elements labeled according to concepts in an ontology, wherein the value of the element represents a confidence that the concept is present in an information space. The apparatus can comprise a knowledge representation unit having at least one ontology stored on a computer-readable medium, at least one data-receiving device, and a processor configured to generate knowledge signatures by comparing datasets obtained by the data-receiving devices to the ontologies.

  12. Apparatus and method X-ray image processing

    International Nuclear Information System (INIS)

    1984-01-01

    The invention relates to a method for X-ray image processing. The radiation passed through the object is transformed into an electric image signal from which the logarithmic value is determined and displayed by a display device. Its main objective is to provide a method and apparatus that renders X-ray images or X-ray subtraction images with strong reduction of stray radiation. (Auth.)

  13. Intensification of Evaporation and Condensation Processes in Heat Exchange Apparatus

    Directory of Open Access Journals (Sweden)

    L. L. Vasiliev

    2005-01-01

    Full Text Available The paper describes proposed design solutions for an intensification of heat transfer in evaporation and condensation heat exchangers. Complex experimental research of heat and mass transfer processes in flat and round cross-section miniature heat pipes is carried out. Optimization, development, manufacturing and an experimental investigation of copper miniature heat pipes with sintered powder are executed. Investigation results of capillary-porous structure properties that are used in evaporation and condensation heat-exchange apparatus are presented.

  14. Method and apparatus for lysing and processing algae

    Science.gov (United States)

    Chew, Geoffrey; Reich, Alton J.; Dykes, Jr., H. Waite H.; Di Salvo, Roberto

    2013-03-05

    Methods and apparatus for processing algae are described in which a hydrophilic ionic liquid is used to lyse algae cells at lower temperatures than existing algae processing methods. A salt or salt solution is used as a separation agent and to remove water from the ionic liquid, allowing the ionic liquid to be reused. The used salt may be dried or concentrated and reused. The relatively low lysis temperatures and recycling of the ionic liquid and salt reduce the environmental impact of the algae processing while providing biofuels and other useful products.

  15. Apparatus for electrical-assisted incremental forming and process thereof

    Science.gov (United States)

    Roth, John; Cao, Jian

    2018-04-24

    A process and apparatus for forming a sheet metal component using an electric current passing through the component. The process can include providing an incremental forming machine, the machine having at least one arcuate tipped tool and at least electrode spaced a predetermined distance from the arcuate tipped tool. The machine is operable to perform a plurality of incremental deformations on the sheet metal component using the arcuate tipped tool. The machine is also operable to apply an electric direct current through the electrode into the sheet metal component at the predetermined distance from the arcuate tipped tool while the machine is forming the sheet metal component.

  16. Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

    Science.gov (United States)

    Pierścińska, D.

    2018-01-01

    This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

  17. Process and apparatus for detecting presence of plant substances

    International Nuclear Information System (INIS)

    Kirby, J.A.

    1991-01-01

    This patent describes an apparatus and process for detecting the presence of plant substances in a particular environment. It comprises: measuring the background K40 gamma ray radiation level in a particular environment with a 1.46 MeV gamma ray counter system; measuring the amount of K40 gamma ray radiation emanating from a package containing a plant substance being passed through an environment with a counter; and generating an alarm signal when the total K40 gamma ray radiation reaches a predetermined level over and above the background level

  18. Origin of poor doping efficiency in solution processed organic semiconductors.

    Science.gov (United States)

    Jha, Ajay; Duan, Hong-Guang; Tiwari, Vandana; Thorwart, Michael; Miller, R J Dwayne

    2018-05-21

    Doping is an extremely important process where intentional insertion of impurities in semiconductors controls their electronic properties. In organic semiconductors, one of the convenient, but inefficient, ways of doping is the spin casting of a precursor mixture of components in solution, followed by solvent evaporation. Active control over this process holds the key to significant improvements over current poor doping efficiencies. Yet, an optimized control can only come from a detailed understanding of electronic interactions responsible for the low doping efficiencies. Here, we use two-dimensional nonlinear optical spectroscopy to examine these interactions in the course of the doping process by probing the solution mixture of doped organic semiconductors. A dopant accepts an electron from the semiconductor and the two ions form a duplex of interacting charges known as ion-pair complexes. Well-resolved off-diagonal peaks in the two-dimensional spectra clearly demonstrate the electronic connectivity among the ions in solution. This electronic interaction represents a well resolved electrostatically bound state, as opposed to a random distribution of ions. We developed a theoretical model to recover the experimental data, which reveals an unexpectedly strong electronic coupling of ∼250 cm -1 with an intermolecular distance of ∼4.5 Å between ions in solution, which is approximately the expected distance in processed films. The fact that this relationship persists from solution to the processed film gives direct evidence that Coulomb interactions are retained from the precursor solution to the processed films. This memory effect renders the charge carriers equally bound also in the film and, hence, results in poor doping efficiencies. This new insight will help pave the way towards rational tailoring of the electronic interactions to improve doping efficiencies in processed organic semiconductor thin films.

  19. Handbook of compound semiconductors growth, processing, characterization, and devices

    CERN Document Server

    Holloway, Paul H

    1996-01-01

    This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

  20. Automated defect spatial signature analysis for semiconductor manufacturing process

    Science.gov (United States)

    Tobin, Jr., Kenneth W.; Gleason, Shaun S.; Karnowski, Thomas P.; Sari-Sarraf, Hamed

    1999-01-01

    An apparatus and method for performing automated defect spatial signature alysis on a data set representing defect coordinates and wafer processing information includes categorizing data from the data set into a plurality of high level categories, classifying the categorized data contained in each high level category into user-labeled signature events, and correlating the categorized, classified signature events to a present or incipient anomalous process condition.

  1. Apparatus and process for deposition of hard carbon films

    Science.gov (United States)

    Nyaiesh, Ali R.; Garwin, Edward L.

    1989-01-03

    A process and an apparatus for depositing thin, amorphous carbon films having extreme hardness on a substrate is described. An enclosed chamber maintained at less than atmospheric pressure houses the substrate and plasma producing elements. A first electrode is comprised of a cavity enclosed within an RF coil which excites the plasma. A substrate located on a second electrode is excited by radio frequency power applied to the substrate. A magnetic field confines the plasma produced by the first electrode to the area away from the walls of the chamber and focuses the plasma onto the substrate thereby yielding film deposits having higher purity and having more rapid buildup than other methods of the prior art.

  2. Process and apparatus for sealing nuclear reactor fuel

    International Nuclear Information System (INIS)

    Duncan, R.; Barna, R.P.

    1978-01-01

    A process and apparatus for simultaneously pressurizing a fuel rod having a plug in one end, welding a plug in the other end and sealing a gas pressurizing orifice therein in a single operation is described. A weld chamber is provided which accommodates one end of a seal rod having a plug fixed in the rod end by a friction fit. A mechanism pushes the fuel rod into the weld chamber which is then pressurized to force gas through a plug orifice into the fuel rod. During subsequent rotation of the rod, an electrode in the weld chamber forms a weld puddle which bridges the end plug-fuel rod interface and the plug orifice to thereby weld the plug in the rod and seal the plug orifice in a single operation. 6 claims, 3 figures

  3. Fundamental atomic plasma chemistry for semiconductor manufacturing process analysis

    International Nuclear Information System (INIS)

    Ventzek, P.L.G.; Zhang, D.; Stout, P.J.; Rauf, S.; Orlowski, M.; Kudrya, V.; Astapenko, V.; Eletskii, A.

    2002-01-01

    An absence of fundamental atomic plasma chemistry data (e.g. electron impact cross-sections) hinders the application of plasma process models in semiconductor manufacturing. Of particular importance is excited state plasma chemistry data for metallization applications. This paper describes important plasma chemistry processes in the context of high density plasmas for metallization application and methods for the calculation of data for the study of these processes. Also discussed is the development of model data sets that address computational tractability issues. Examples of model electron impact cross-sections for Ni reduced from multiple collision processes are presented

  4. Engineering charge transport by heterostructuring solution-processed semiconductors

    Science.gov (United States)

    Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

    2017-06-01

    Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

  5. Method and apparatus for monitoring plasma processing operations

    Science.gov (United States)

    Smith, Jr., Michael Lane; Ward, Pamela Denise Peardon; Stevenson, Joel O'Don

    2002-01-01

    The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Plasma health evaluations and process identification through optical emissions analysis are included in this aspect. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). Another aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system. A final aspect of the present invention relates to a network a plurality of plasma monitoring systems, including with remote capabilities (i.e., outside of the clean room).

  6. Apparatus and method for plasma processing of SRF cavities

    Science.gov (United States)

    Upadhyay, J.; Im, Do; Peshl, J.; Bašović, M.; Popović, S.; Valente-Feliciano, A.-M.; Phillips, L.; Vušković, L.

    2016-05-01

    An apparatus and a method are described for plasma etching of the inner surface of superconducting radio frequency (SRF) cavities. Accelerator SRF cavities are formed into a variable-diameter cylindrical structure made of bulk niobium, for resonant generation of the particle accelerating field. The etch rate non-uniformity due to depletion of the radicals has been overcome by the simultaneous movement of the gas flow inlet and the inner electrode. An effective shape of the inner electrode to reduce the plasma asymmetry for the coaxial cylindrical rf plasma reactor is determined and implemented in the cavity processing method. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise way to establish segmented plasma columns. The test structure was a pillbox cavity made of steel of similar dimension to the standard SRF cavity. This was adopted to experimentally verify the plasma surface reaction on cylindrical structures with variable diameter using the segmented plasma generation approach. The pill box cavity is filled with niobium ring- and disk-type samples and the etch rate of these samples was measured.

  7. Simulation of the selective oxidation process of semiconductors

    International Nuclear Information System (INIS)

    Chahoud, M.

    2012-01-01

    A new approach to simulate the selective oxidation of semiconductors is presented. This approach is based on the so-called b lack box simulation method . This method is usually used to simulate complex processes. The chemical and physical details within the process are not considered. Only the input and output data of the process are relevant for the simulation. A virtual function linking the input and output data has to be found. In the case of selective oxidation the input data are the mask geometry and the oxidation duration whereas the output data are the oxidation thickness distribution. The virtual function is determined as four virtual diffusion processes between the masked und non-masked areas. Each process delivers one part of the oxidation profile. The method is applied successfully on the oxidation system silicon-silicon nitride (Si-Si 3 N 4 ). The fitting parameters are determined through comparison of experimental and simulation results two-dimensionally.(author)

  8. Surface passivation process of compound semiconductor material using UV photosulfidation

    Science.gov (United States)

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  9. Apparatus and Process for Controlled Nanomanufacturing Using Catalyst Retaining Structures

    Science.gov (United States)

    Nguyen, Cattien (Inventor)

    2013-01-01

    An apparatus and method for the controlled fabrication of nanostructures using catalyst retaining structures is disclosed. The apparatus includes one or more modified force microscopes having a nanotube attached to the tip portion of the microscopes. An electric current is passed from the nanotube to a catalyst layer of a substrate, thereby causing a localized chemical reaction to occur in a resist layer adjacent the catalyst layer. The region of the resist layer where the chemical reaction occurred is etched, thereby exposing a catalyst particle or particles in the catalyst layer surrounded by a wall of unetched resist material. Subsequent chemical vapor deposition causes growth of a nanostructure to occur upward through the wall of unetched resist material having controlled characteristics of height and diameter and, for parallel systems, number density.

  10. Outline of an experimental apparatus for the study on the advanced voloxidation process

    International Nuclear Information System (INIS)

    Uchiyama, Gunzo; Sugikawa, Susumu; Maeda, Mitsuru; Tsujino, Takeshi; Torikai, Seishi; Kitamura, Masafumi; Yamazaki, Kazunobu.

    1990-02-01

    The experimental apparatus (VULCAN, the capacity; 2 kg-UO 2 /batch) was constructed to study on the advanced voloxidation process, which was proposed to reduce amount of tritium released from fuel reprocessing facilities. Using this equipment, a process study was conducted on behaviors of oxidation-reduction of simulated fuels and of release of tritium, and on confinement function of rotary seal of the reactor. An outline of the experimental apparatus is described. (author)

  11. Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

    Science.gov (United States)

    Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

    1998-01-01

    The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

  12. Apparatus and process for ultrasonic seam welding stainless steel foils

    Science.gov (United States)

    Leigh, Richard W.

    1992-01-01

    An ultrasonic seam welding apparatus having a head which is rotated to form contact, preferably rolling contact, between a metallurgically inert coated surface of the head and an outside foil of a plurality of layered foils or work materials. The head is vibrated at an ultrasonic frequency, preferably along a longitudinal axis of the head. The head is constructed to transmit vibration through a contacting surface of the head into each of the layered foils. The contacting surface of the head is preferably coated with aluminum oxide to prevent the head from becoming welded to layered stainless steel foils.

  13. Apparatus and process for separating end of nuclear fuel assembly

    International Nuclear Information System (INIS)

    Beneck, J.A.; Quayre, C.; Moreau, J.R.M.; Vermeille, D.E.A.

    1989-01-01

    The apparatus for cutting the guide tubes of a nuclear fuel assembly below the bottom nozzle has a framework with removable fixation and centering means on the bottom nozzle. Cutting devices in the form of hollow pins are inserted simultaneously into all the guide tubes. Each pin contains a shaft that is moved axially inside it by the expansion system to deploy or retract a cutting edge near the lower end of the pin. A single motor using a gear wheel system, rotates all the cutting pins simultaneously [fr

  14. Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.; Chisholm, Matthew F.

    2000-01-01

    A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

  15. Apparatus and process for handling dangerous fluent material

    International Nuclear Information System (INIS)

    Stock, A.J.; Christofer, D.E.; Brinza, J.E.

    1976-01-01

    Systems, apparatus and methods are disclosed for disposing of radioactive waste materials by placing them into a container such as a steel drum, together with cement or other solidifying agent and water or other suitable liquid in amounts sufficient to provide eventually a solidified mixture of predetermined amounts of cement or other solidifying agent and radioactive material, closing the drum, agitating the mixture in the drum for mixing the contents, and then storing the drum for at least a period of time sufficient to permit partial decay of radioactive materials or to await available time for shipment. Also disclosed are remotely controlled apparatus for handling both empty and filled drums, for placing the drums in and removing drums from enclosed drumming equipment where they have been filled and agitated, for accurately placing the drums containing radioactive material in storage, and for removing the drums from storage and loading them on a vehicle for transportation. All of these operations are done by remote control with a high degree of safety to the operators and maintenance personnel from radiation and freedom of the ambient from radiation pollution

  16. Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices

    Science.gov (United States)

    Horn, Kevin M [Albuquerque, NM

    2006-03-28

    A scanned, pulsed, focused laser irradiation apparatus can measure and image the photocurrent collection resulting from a dose-rate equivalent exposure to infrared laser light across an entire silicon die. Comparisons of dose-rate response images or time-delay images from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems allows precise identification of those specific age-affected circuit structures within a device that merit further quantitative analysis with targeted materials or electrical testing techniques. Another embodiment of the invention comprises a broad-beam, dose rate-equivalent exposure apparatus. The broad-beam laser irradiation apparatus can determine if aging has affected the device's overall functionality. This embodiment can be combined with the synchronized introduction of external electrical transients into a device under test to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure.

  17. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  18. Tomogram forming process and apparatus using radioactive isotopes

    International Nuclear Information System (INIS)

    Stoddart, H.F.

    1980-01-01

    This invention relates to nuclear medicine and particularly to a tomogram forming apparatus which permits, with great efficiency, the very sensitive quantitative determination and the accurate spatial localization of the radioactivity of a body section of a patient to whom a substance labelled with radioactive isotopes has been administered. This scanner is characterized in that it includes several highly focused collimators placed one after the other, according to an arrangement which surrounds a scanning field. Each collimator is mobile with respect to the adjacent one and a system enables the arrangement to be rotated about the scanning field from one scanning position to another. Another device enables the collimators to be moved so that, for each scanning position, the focus of each collimator uniformly samples at least half the scanning field [fr

  19. Complex nuclear geophysical methods and apparatus to increase the efficiency of prospecting extracting and processing nonradioactive minerals as examplified by tin ores

    International Nuclear Information System (INIS)

    Baldin, S.A.; Voloshchuk, S.N.; Egiazarov, B.G.; Zernov, L.V.; Luchin, I.A.; Matveev, V.V.; Pukhal'skij, L.Ch.; Chesnokov, N.I.

    1979-01-01

    Described is the complex of nuclear geophysical methods and apparatus, with the help of which the problem of the industrial control at all stages of ore concentrating industry are being solved. γ resonance and X-ray radiometric methods and apparatus providing express and not less accurate determination of general tin and tin in the form of cassiterite are used in the complex. The devices developed on the base of semiconductor spectrometers and used both under industrial conditions and in production regimes are used for the first time in the practice of ore concentrating industry. The essential positive effect of the complex on technical economical indices of the industry is found out; it allows to use more effective methods of extracting and processing technology. The similar complexes may be developed for other kinds of nonradioactive minerals

  20. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.

    1992-01-01

    This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed

  1. Flexible distributed architecture for semiconductor process control and experimentation

    Science.gov (United States)

    Gower, Aaron E.; Boning, Duane S.; McIlrath, Michael B.

    1997-01-01

    Semiconductor fabrication requires an increasingly expensive and integrated set of tightly controlled processes, driving the need for a fabrication facility with fully computerized, networked processing equipment. We describe an integrated, open system architecture enabling distributed experimentation and process control for plasma etching. The system was developed at MIT's Microsystems Technology Laboratories and employs in-situ CCD interferometry based analysis in the sensor-feedback control of an Applied Materials Precision 5000 Plasma Etcher (AME5000). Our system supports accelerated, advanced research involving feedback control algorithms, and includes a distributed interface that utilizes the internet to make these fabrication capabilities available to remote users. The system architecture is both distributed and modular: specific implementation of any one task does not restrict the implementation of another. The low level architectural components include a host controller that communicates with the AME5000 equipment via SECS-II, and a host controller for the acquisition and analysis of the CCD sensor images. A cell controller (CC) manages communications between these equipment and sensor controllers. The CC is also responsible for process control decisions; algorithmic controllers may be integrated locally or via remote communications. Finally, a system server images connections from internet/intranet (web) based clients and uses a direct link with the CC to access the system. Each component communicates via a predefined set of TCP/IP socket based messages. This flexible architecture makes integration easier and more robust, and enables separate software components to run on the same or different computers independent of hardware or software platform.

  2. Processing of semiconductors and thin film solar cells using electroplating

    Science.gov (United States)

    Madugu, Mohammad Lamido

    The global need for a clean, sustainable and affordable source of energy has triggered extensive research especially in renewable energy sources. In this sector, photovoltaic has been identified as a cheapest, clean and reliable source of energy. It would be of interest to obtain photovoltaic material in thin film form by using simple and inexpensive semiconductor growth technique such as electroplating. Using this growth technique, four semiconductor materials were electroplated on glass/fluorine-doped tin oxide (FTO) substrate from aqueous electrolytes. These semiconductors are indium selenide (In[x]Sey), zinc sulphide (ZnS), cadmium sulphide (CdS) and cadmium telluride (CdTe). In[x]Se[y] and ZnS were incorporated as buffer layers while CdS and CdTe layers were utilised as window and absorber layers respectively. All materials were grown using two-electrode (2E) system except for CdTe which was grown using 3E and 2E systems for comparison. To fully optimise the growth conditions, the as-deposited and annealed layers from all the materials were characterised for their structural, morphological, optical, electrical and defects structures using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption (UV-Vis spectroscopy), photoelectrochemical (PEC) cell measurements, current-voltage (I-V), capacitance-voltage (C-V), DC electrical measurements, ultraviolet photoelectron spectroscopy (UPS) and photoluminescence (PL) techniques. Results show that InxSey and ZnS layers were amorphous in nature and exhibit both n-type and p-type in electrical conduction. CdS layers are n-type in electrical conduction and show hexagonal and cubic phases in both the as-deposited and after annealing process. CdTe layers show cubic phase structure with both n-type and p-type in electrical conduction. CdTe-based solar cell structures with a n-n heterojunction plus large Schottky barrier, as well as multi-layer graded

  3. A process for doping an amorphous semiconductor material by ion implantation

    International Nuclear Information System (INIS)

    Kalbitzer, S.; Muller, G.; Spear, W.E.; Le Comber, P.G.

    1979-01-01

    In a process for doping a body of amorphous semiconductor material, the body is held at a predetermined temperature above 20 deg. C which is below the recrystallization temperature of the amorphous semiconductor material during bombardment by accelerated ions of a predetermined doping material. (U.K.)

  4. Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

    Science.gov (United States)

    Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

    2017-06-01

    The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Laser apparatus and method for microscopic and spectroscopic analysis and processing of biological cells

    Science.gov (United States)

    Gourley, P.L.; Gourley, M.F.

    1997-03-04

    An apparatus and method are disclosed for microscopic and spectroscopic analysis and processing of biological cells. The apparatus comprises a laser having an analysis region within the laser cavity for containing one or more biological cells to be analyzed. The presence of a cell within the analysis region in superposition with an activated portion of a gain medium of the laser acts to encode information about the cell upon the laser beam, the cell information being recoverable by an analysis means that preferably includes an array photodetector such as a CCD camera and a spectrometer. The apparatus and method may be used to analyze biomedical cells including blood cells and the like, and may include processing means for manipulating, sorting, or eradicating cells after analysis. 20 figs.

  6. Safety measures for integrity test apparatus for IS process. Sulfuric acid decomposition section

    International Nuclear Information System (INIS)

    Noguchi, Hiroki; Kubo, Shinji; Iwatsuki, Jin; Onuki, Kaoru

    2013-07-01

    Hazardous substances such as sulfuric acid, sulfur dioxide and hydrogen iodide acid are employed in thermochemical Iodine-Sulfur (IS) process. It is necessary to take safety measure against workers and external environments to study experimentally on IS process. Presently we have been conducting to verify the soundness of main components made of engineering material in actual corrosive condition. An integrity test apparatus for the components of sulfuric acid decomposition was set up. We will use the hazardous substances such as sulfuric acid and sulfur dioxide and perform the experiment in pressurized condition in this integrity test. Safety measures for the test apparatus, operation and abnormal situation were considered prior to starting the test. This report summarized the consideration results for the safety measures on the integrity test apparatus for the components of sulfuric acid decomposition. (author)

  7. TXRF applications for semiconductor materials and process characterization

    International Nuclear Information System (INIS)

    Zaitz, M.A.

    2000-01-01

    In the past 30 years, the semiconductor industry has undergone a dramatic evolution in technology which now has become part of our daily lives. The density of transistors on a chip has grown exponentially, approximately doubling every 18 months or increasing 3200 times. Early chips from the 1970's had about 2300 components on them compared to 7.5 million on today's sophisticated microprocessors. It is an exhausting pace with no let up in sight. Traditional materials are no longer keeping pace. Smaller and smaller circuits require alternative materials and processes. New materials such as high k and low k dielectric are being evaluated to replace silicon dioxide both as a gate material and as an insulator. Copper wiring which has less resistance thereby increasing signal speed is well into manufacturing. Other technologies such as SOI (silicon on insulator) are good candidates to win the battle of speed and performance. To keep this pace of phenomenal creativity going, material characterization and process development needs novel and innovative techniques. The versatility of total reflection x-ray florescence (TXRF) makes it an ideal analytical instrument for research and development studies for ultra trace metal analysis. TXRF can easily measure the surfaces of thin metallic films, but also both low and high K dielectric materials for ultra trace contamination levels. The multiple element capability provides accurate quantitative data over a wide range of elements. Nontraditional elements such as argon which is easily trapped in films during the sputter deposition process are easily detected by TXRF. Advances in light element; Al, Na, Mg, are providing information that was very difficult and time consuming to obtain by other analytical techniques. TXRF analysis on wafers show aluminum contamination patterns from a brush clean study and an ion implanted, shallow doped study. The silicon wafer is the perfect carrier for a TXRF analysis- smooth and highly polished for

  8. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    CERN Document Server

    Li, Simon

    2012-01-01

    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

  9. Characterization and processing of bipolar semiconductor electrodes in a dual electrolyte cell

    Energy Technology Data Exchange (ETDEWEB)

    Cattarin, S.; Musiani, M.M. [Istituto di Polarografia ed Elettrochimica Preparativa del C.N.R., Padova (Italy)

    1995-11-01

    Photoelectrochemical (PEC) processes may be induced at both faces of a bipolar semiconductor electrode without application of metal contacts by using the dual electrolyte arrangement -- metal/electrolyte 1/semiconductor/electrolyte 2/metal -- and by applying a voltage to the end metal electrodes. The possibilities of semiconductor characterization (determination of action spectra and doping level) and processing (photoetching and metal electrodeposition) are discussed on the basis of model experiments, performed with n-InP wafers. The advantages of this approach over traditional PEC and electroless techniques are discussed with particular emphasis on etching.

  10. Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

    Science.gov (United States)

    Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

    2017-01-25

    We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

  11. Apparatus and method for implementing power saving techniques when processing floating point values

    Science.gov (United States)

    Kim, Young Moon; Park, Sang Phill

    2017-10-03

    An apparatus and method are described for reducing power when reading and writing graphics data. For example, one embodiment of an apparatus comprises: a graphics processor unit (GPU) to process graphics data including floating point data; a set of registers, at least one of the registers of the set partitioned to store the floating point data; and encode/decode logic to reduce a number of binary 1 values being read from the at least one register by causing a specified set of bit positions within the floating point data to be read out as 0s rather than 1s.

  12. Photoelectrochemical processes in organic semiconductor: Ambipolar perylene diimide thin film

    Science.gov (United States)

    Kim, Jung Yong; Chung, In Jae

    2018-03-01

    A thin film of N,N‧-dioctadecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C18) is spin-coated on indium tin oxide (ITO) glass. Using the PTCDI-C18/ITO electrode, we fabricate a photoelectrochemical cell with the ITO/PTCDI-C18/Redox Electrolyte/Pt configuration. The electrochemical properties of this device are investigated as a function of hydroquinone (HQ) concentration, bias voltage, and wavelength of light. Anodic photocurrent is observed at V ≥ -0.2 V vs. Ag/AgCl, indicating that the PTCDI-C18 film acts as an n-type semiconductor as usual. However, when benzoquinone (BQ) is inserted into the electrolyte system instead of HQ, cathodic photocurrent is observed at V ≤ 0.0 V, displaying that PTCDI-C18 abnormally serves as a p-type semiconductor. Hence the overall results reveal that the PTCDI-C18 film can be an ambipolar functional semiconductor depending on the redox couple in the appropriate voltage.

  13. Process and apparatus for producing nuclear fusion reactions

    International Nuclear Information System (INIS)

    Maglich, B.C.; Nering, J.E.; Mazarakis, M.G.; Miller, R.A.

    1976-01-01

    A process is submitted for the production of fusion reactions between particles of like polarity. This process consists essentially in delimitating a pumped down space comprising a central axis and a central plane arranged radially, and perpendicular to this central axis, in developing in this space a magnetic field the intensity of which decreases when the radial distance increases from the central axis and of which the intensity increases from the central plane, along this central axis. Particles of the same polarity are produced according to a population distribution in which the density of the particles in the greatest vibrational state exceeds the density of the particles in the greatest vibrational state in a normal distribution. These particles are injected near the centre of the magnetic field, by radial injection towards the inside as from the periphery of the space, in the same plane as the central plane [fr

  14. Process and apparatus for the separtaion of isotopes

    International Nuclear Information System (INIS)

    Ma, I.J.

    1983-01-01

    A process is claimed for the separation of isotopes particularly uranium isotopes, characterized by the fact that this process is based on the charge exchange reaction (A + + B → A+B + ), with the atomic ions A + of one of the isotopes of an element being selectively excited and the atomic ions of the other isotope of the same element being allowed to remain in the ground state, and with the excited ions being neutralized by means of atoms or molecules (B) after the charge exchange reaction has been completed. For the selection of an atom or molecule B the first ionization potential thereof should be greater than the ionization potential of uranium. Laser radiation is used to excite the atoms

  15. Process and apparatus for irradiating film, and irradiated film

    International Nuclear Information System (INIS)

    1981-01-01

    A process for irradiating film is described, which consists of passing the film through an electron irradiation zone having an electron reflection surface disposed behind and generally parallel to the film; and disposing within the irradiation zone adjacent the edges of the film a lateral reflection member for reflecting the electrons toward the reflection surface to further reflect the reflected electrons towards the adjacent edges of the film. (author)

  16. Acid gas control process and apparatus for waste fired incinerators

    International Nuclear Information System (INIS)

    Kubin, P.Z.; Stepan, J.E.

    1992-01-01

    This patent describes a process for reducing noxious emission produced in a waste material incinerator. It comprises incinerating solid waste material in a furnace section of the waste material incinerator; providing an additive to an additive supply storage unit; conveying the additive to an additive injection means that communicates with the furnace section of the waste material incinerator; injecting the additive into a turbulent reaction zone of the furnace section such that acid gas content, acid dewpoint temperature and the level of corrosion in the incinerator are reduced

  17. Apparatus and process for the surface treatment of carbon fibers

    Science.gov (United States)

    Paulauskas, Felix Leonard; Ozcan, Soydan; Naskar, Amit K.

    2016-05-17

    A method for surface treating a carbon-containing material in which carbon-containing material is reacted with decomposing ozone in a reactor (e.g., a hollow tube reactor), wherein a concentration of ozone is maintained throughout the reactor by appropriate selection of at least processing temperature, gas stream flow rate, reactor dimensions, ozone concentration entering the reactor, and position of one or more ozone inlets (ports) in the reactor, wherein the method produces a surface-oxidized carbon or carbon-containing material, preferably having a surface atomic oxygen content of at least 15%. The resulting surface-oxidized carbon material and solid composites made therefrom are also described.

  18. Process and apparatus for emissions reduction from waste incineration

    International Nuclear Information System (INIS)

    Khinkis, M.J.; Abbasi, H.A.; Lisauskas, R.A.; Itse, D.C.

    1991-01-01

    This paper describes a process for waste combustion. It comprises: introducing the waste into a drying zone within a combustion chamber; supplying air to the drying zone for preheating, drying, and partially combusting the waste; advancing the waste to a combustion zone within the combustion chamber; supplying air to the combustion zone for further advancing the waste to a burnout zone with the combustion chamber; supplying air to the burnout zone for final burnout of organics in the waste; and injecting fuel and recirculated glue gases into the combustion chamber above the waste to create a reducing secondary combustion zone

  19. Designing solution-processable air-stable liquid crystalline crosslinkable semiconductors

    DEFF Research Database (Denmark)

    McCulloch, I.; Bailey, C.; Genevicius, K.

    2006-01-01

    organic light emitting diode displays, low frequency radio frequency identification tag and other low performance electronics. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes...... the development of reactive mesogen semiconductors, which form large crosslinked LC domains on polymerization within mesophases. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed...

  20. Measuring processes with opto-electronic semiconductor components

    International Nuclear Information System (INIS)

    1985-01-01

    This is a report on the state of commercially available semiconductor emitters and detectors for the visible, near, middle and remote infrared range. A survey is given on the distance, speed, flow and length measuring techniques using opto-electronic components. Automatic focussing, the use of light barriers, non-contact temperature measurements, spectroscopic gas, liquid and environmental measurement techniques and gas analysis in medical techniques show further applications of the new components. The modern concept of guided radiation in optical fibres and their use in system technology is briefly explained. (DG) [de

  1. Hydrodynamics of heavy liquid metal coolant processes and filtering apparatus

    International Nuclear Information System (INIS)

    Albert K Papovyants; Yuri I Orlov; Pyotr N Martynov; Yuri D Boltoev

    2005-01-01

    to S ≤ 0,2 d p . It is demonstrated that the filtration efficiency can be significantly influenced by the properties of the capillary-porous structure of the filter material: the fiber diameter, type of braiding providing the availability of stagnant zones, porosity and wetting angle. With some simplifying prerequisites, the evaluation of the dynamics of the sedimentation growth on the porous partition has been performed as a function of time. Analysis of the conditions of the hydrodynamic separation of filter entrained particles (d p ≅ 2 μm) by the coolant flow revealed that to realize this process, it is necessary that the wall flow velocity be about V = 0,2 m/s. The object of investigations was a broad class of filter materials, including metallo-ceramics, metallic grids, carbon cloth, glass-fibers, needle-pierced cloth made of metallic fibers, grainy materials (made of aluminium oxides). By the complex of technical characteristics, with the thermal stability, cleaning efficiency (fineness), impurity retention capacity and hydraulic resistance considered, the multi-layer siliceous textured cloth (SiO 2 >95%, t 400 deg. C) and needle-pierced cloth made of 40 μm-d. metallic fibers (X18H10T steel, t ≤ 400-550 deg. C) are recommended for HLMC cleaning. The routine monitoring of the filter operation is implemented based on its resistance and the reduction of the flow rate through the filter, induced by its clogging by impurities, the clogging being dependent on the concentration of suspensions in coolant. The investigations as conducted made it possible to construct high temperature filter specimens, including those for an output capacity of 900 m 3 /h, in reference to operation and maintenance conditions of heavy liquid metal cooled nuclear power installations. (authors)

  2. Apparatus and process for continuous measurement of moisture in moving coal by neutron thermalization

    International Nuclear Information System (INIS)

    Stewart, R.F.

    1967-01-01

    The invention relates to an apparatus and process for the measurement of moisture contents in solid materials. More particularly, the invention makes available a continuous moisture analysis of a moving mass of material, such as coal, by penetrating such material with neutrons emitted from a source of fast neutrons and detecting, counting, and recording slowed or thermalized neutrons reflected from the internal structure of the material. (U.S.)

  3. Process and apparatus for examination by penetrating radiations, particularly by tomography

    International Nuclear Information System (INIS)

    Taylor, S.K.; Erker, J.W.; Carper, R.L.

    1980-01-01

    This invention concerns a process and apparatus for examination by penetrating radiation, particularly by tomography. Specifically, the invention refers to the 'tacography' or computer assisted axial tomography machines and, in particular, the machines working by translational and rotational displacement. Such a translational and rotational scanner is designed so that the radiation source and detectors move by translation on a carriage at non constant speed. Data samples are taken, for unit distances in space and not during unit times [fr

  4. Microeconomics of yield learning and process control in semiconductor manufacturing

    Science.gov (United States)

    Monahan, Kevin M.

    2003-06-01

    Simple microeconomic models that directly link yield learning to profitability in semiconductor manufacturing have been rare or non-existent. In this work, we review such a model and provide links to inspection capability and cost. Using a small number of input parameters, we explain current yield management practices in 200mm factories. The model is then used to extrapolate requirements for 300mm factories, including the impact of technology transitions to 130nm design rules and below. We show that the dramatic increase in value per wafer at the 300mm transition becomes a driver for increasing metrology and inspection capability and sampling. These analyses correlate well wtih actual factory data and often identify millions of dollars in potential cost savings. We demonstrate this using the example of grating-based overlay metrology for the 65nm node.

  5. Process waste assessment: Petroleum jelly removal from semiconductor die using trichloroethylene

    International Nuclear Information System (INIS)

    Curtin, D.P.

    1993-05-01

    The process analyzed involves non-production, laboratory environment use of trichloroethylene for the cleaning of semiconductor devices. The option selection centered on the replacement of the trichloroethylene with a non-hazardous material. This process waste assessment was performed as part of a pilot project

  6. Magnetic filter apparatus and method for generating cold plasma in semicoductor processing

    Science.gov (United States)

    Vella, Michael C.

    1996-01-01

    Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a "cold plasma" which is diffused in the region of the process surface while the ion implantation process takes place.

  7. Ergonomic risk factors of work processes in the semiconductor industry in Peninsular Malaysia.

    Science.gov (United States)

    Chee, Heng-Leng; Rampal, Krishna Gopal; Chandrasakaran, Abherhame

    2004-07-01

    A cross-sectional survey of semiconductor factories was conducted to identify the ergonomic risk factors in the work processes, the prevalence of body pain among workers, and the relationship between body pain and work processes. A total of 906 women semiconductor workers took part in the study. In wafer preparation and polishing, a combination of lifting weights and prolonged standing might have led to high pain prevalences in the low back (35.0% wafer preparation, 41.7% wafer polishing) and lower limbs (90.0% wafer preparation, 66.7% wafer polishing). Semiconductor front of line workers, who mostly walked around to operate machines in clean rooms, had the lowest prevalences of body pain. Semiconductor assembly middle of line workers, especially the molding workers, who did frequent lifting, had high pain prevalences in the neck/shoulders (54.8%) and upper back (43.5 %). In the semiconductor assembly end of line work section, chip inspection workers who were exposed to prolonged sitting without back support had high prevalences of neck/shoulder (62.2%) and upper back pain (50.0%), while chip testing workers who had to climb steps to load units had a high prevalence of lower limb pain (68.0%). Workers in the assembly of electronic components, carrying out repetitive tasks with hands and fingers, and standing in awkward postures had high pain prevalences in the neck/shoulders (61.5%), arms (38.5%), and hands/wrists (30.8%).

  8. Radiation processing of polymers and semiconductors at the Institute of Nuclear Chemistry and Technology

    International Nuclear Information System (INIS)

    Zimek, Z.; Przybytniak, G.; Kaluska, I.

    2006-01-01

    R(and)D studies in the field of radiation technology in Poland are mostly concentrated at the Institute of Nuclear Chemistry and Technology (INCT). The results of the INCT works on polymer and semiconductor modification have been implemented in various branches of national economy, particularly in industry and medicine. Radiation technology for polymer modification was implemented in the middle of the 1970-ties. Among others, the processes of irradiation and heat shrinkable products expansion have been developed. The transfer of this technology to Polish industry was performed in the middle of the 1980-ties. The present study aims at the formulation of new PE composites better suited to new generation of heat shrinkable products, for example, a new generation of hot-melt adhesives has been developed to meet specific requirements of customers. Modified polypropylene was used for the production of medical devices sterilized by radiation, especially disposable syringes, to overcome the low radiation resistance of the basic material. Modified polypropylene (PP-M) has been formulated at the INCT to provide material suitable for medical application and radiation sterilization process. Modification of semiconductor devices by EB was applied on an industrial scale since 1978 when the INCT and the LAMINA semiconductor factory successfully adopted that technology to improve specific semiconductor devices. This activity is continued on commercial basis where the INCT facilities served to contract irradiation of certain semiconductor devices according to the manufacturing program of the Polish factory and customers from abroad. (author)

  9. Process and apparatus to analyze high-boiling products by distillation

    Energy Technology Data Exchange (ETDEWEB)

    Goupil, J.; Mouton, M.; Fischer, W.

    1982-05-19

    In the described process to analyze high-boiling petroleum products by distillation, contents of these products with atmospheric boiling points above 500/sup 0/C can be isolated as distillates. For this purpose the continuous shortway distillation process is employed and at least a part of the components of the apparatus which serve to introduce the raw product are heated seperately and held at different temperatures. The raw product is distributed on the combustion surface of the shortway distiller by a roller wiping system.

  10. A cyano-terminated dithienyldiketopyrrolopyrrole dimer as a solution processable ambipolar semiconductor under ambient conditions.

    Science.gov (United States)

    Wang, Li; Zhang, Xiaojie; Tian, Hongkun; Lu, Yunfeng; Geng, Yanhou; Wang, Fosong

    2013-12-14

    A cyano-terminated dimer of dithienyldiketopyrrolopyrrole (TDPP), DPP2-CN, is a solution processable ambipolar semiconductor with field-effect hole and electron mobilities of 0.066 and 0.033 cm(2) V(-1) s(-1), respectively, under ambient conditions.

  11. Ultrafast dynamics in semiconductor optical amplifiers and all-optical processing: Bulk versus quantum dot devices

    DEFF Research Database (Denmark)

    Mørk, Jesper; Berg, Tommy Winther; Magnúsdóttir, Ingibjörg

    2003-01-01

    We discuss the dynamical properties of semiconductor optical amplifiers and the importance for all-optical signal processing. In particular, the dynamics of quantum dot amplifiers is considered and it is suggested that these may be operated at very high bit-rates without significant patterning...

  12. Evolutionary process development towards next generation crystalline silicon solar cells : a semiconductor process toolbox application

    Directory of Open Access Journals (Sweden)

    Tous L.

    2012-08-01

    Full Text Available Bulk crystalline Silicon solar cells are covering more than 85% of the world’s roof top module installation in 2010. With a growth rate of over 30% in the last 10 years this technology remains the working horse of solar cell industry. The full Aluminum back-side field (Al BSF technology has been developed in the 90’s and provides a production learning curve on module price of constant 20% in average. The main reason for the decrease of module prices with increasing production capacity is due to the effect of up scaling industrial production. For further decreasing of the price per wattpeak silicon consumption has to be reduced and efficiency has to be improved. In this paper we describe a successive efficiency improving process development starting from the existing full Al BSF cell concept. We propose an evolutionary development includes all parts of the solar cell process: optical enhancement (texturing, polishing, anti-reflection coating, junction formation and contacting. Novel processes are benchmarked on industrial like baseline flows using high-efficiency cell concepts like i-PERC (Passivated Emitter and Rear Cell. While the full Al BSF crystalline silicon solar cell technology provides efficiencies of up to 18% (on cz-Si in production, we are achieving up to 19.4% conversion efficiency for industrial fabricated, large area solar cells with copper based front side metallization and local Al BSF applying the semiconductor toolbox.

  13. Recent Advancements in Semiconductor-based Optical Signal Processing

    DEFF Research Database (Denmark)

    Nielsen, M L; Mørk, Jesper

    2006-01-01

    Significant advancements in technology and basic understanding of device physics are bringing optical signal processing closer to a commercial breakthrough. In this paper we describe the main challenges in high-speed SOA-based switching.......Significant advancements in technology and basic understanding of device physics are bringing optical signal processing closer to a commercial breakthrough. In this paper we describe the main challenges in high-speed SOA-based switching....

  14. Ultrafast optical signal processing using semiconductor quantum dot amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing.......The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing....

  15. High Speed Pump-Probe Apparatus for Observation of Transitional Effects in Ultrafast Laser Micromachining Processes

    Directory of Open Access Journals (Sweden)

    Ilya Alexeev

    2015-12-01

    Full Text Available A pump-probe experimental approach has been shown to be a very efficient tool for the observation and analysis of various laser matter interaction effects. In those setups, synchronized laser pulses are used to create an event (pump and to simultaneously observe it (probe. In general, the physical effects that can be investigated with such an apparatus are restricted by the temporal resolution of the probe pulse and the observation window. The latter can be greatly extended by adjusting the pump-probe time delay under the assumption that the interaction process remains fairly reproducible. Unfortunately, this assumption becomes invalid in the case of high-repetition-rate ultrafast laser material processing, where the irradiation history strongly affects the ongoing interaction process. In this contribution, the authors present an extension of the pump-probe setup that allows to investigate transitional and dynamic effects present during ultrafast laser machining performed at high pulse repetition frequencies.

  16. Direct and indirect two-photon processes in semiconductors

    International Nuclear Information System (INIS)

    Hassan, A.R.

    1986-07-01

    The expressions describing direct and indirect two-photon absorption in crystals are given. They are valid both near and far from the energy gap. A perturbative approach through two different band models is adopted. The effects of the non-parabolicity and the degeneracy of the energy bands are considered. The numerical results are compared with the other theories and with a recent experimental data in Zn and AgCl. It is shown that the dominant transition mechanisms are of the allowed-allowed type near and far from the gap for both direct and indirect processes. (author)

  17. Proceedings of defect engineering in semiconductor growth, processing and device technology

    International Nuclear Information System (INIS)

    Ashok, S.; Chevallier, J.; Sumino, K.; Weber, E.

    1992-01-01

    This volume results from a symposium that was part of the 1992 Spring Meeting of the Materials Research Society, held in San Francisco from April 26 to May 1, 1992. The symposium, entitled Defect Engineering in Semiconductor Growth, Processing and Device Technology, was the first of its kind at MRS and brought together academic and industrial researchers with varying perspectives on defects in semiconductors. Its aim was to go beyond defect control, and focus instead on deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. While the concept of defect engineering has at least a vague perception in techniques such as impurity/defect gettering and the use of the EL2 level in GaAs, more extensive as well as subtle uses of defects are emerging to augment the field. This symposium was intended principally to encourage creative new applications of defects in all aspects of semiconductor technology. The organization of this proceedings volume closely follows the topics around which the sessions were built. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects, their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. The issues addressed by the papers on defects in thin films include impurity and stoichiometry control, defects created by plasmas and the use of electron/ion irradiation for doping control

  18. Apparatus and method for materials processing utilizing a rotating magnetic field

    Science.gov (United States)

    Muralidharan, Govindarajan; Angelini, Joseph A.; Murphy, Bart L.; Wilgen, John B.

    2017-04-11

    An apparatus for materials processing utilizing a rotating magnetic field comprises a platform for supporting a specimen, and a plurality of magnets underlying the platform. The plurality of magnets are configured for rotation about an axis of rotation intersecting the platform. A heat source is disposed above the platform for heating the specimen during the rotation of the plurality of magnets. A method for materials processing utilizing a rotating magnetic field comprises providing a specimen on a platform overlying a plurality of magnets; rotating the plurality of magnets about an axis of rotation intersecting the platform, thereby applying a rotating magnetic field to the specimen; and, while rotating the plurality of magnets, heating the specimen to a desired temperature.

  19. Evaluation of co-processed excipients used for direct compression of orally disintegrating tablets (ODT) using novel disintegration apparatus.

    Science.gov (United States)

    Brniak, Witold; Jachowicz, Renata; Krupa, Anna; Skorka, Tomasz; Niwinski, Krzysztof

    2013-01-01

    The compendial method of evaluation of orodispersible tablets (ODT) is the same disintegration test as for conventional tablets. Since it does not reflect the disintegration process in the oral cavity, alternative methods are proposed that are more related to in vivo conditions, e.g. modified dissolution paddle apparatus, texture analyzer, rotating shaft apparatus, CCD camera application, or wetting time and water absorption ratio measurement. In this study, three different co-processed excipients for direct compression of orally disintegrating tablets were compared (Ludiflash, Pharmaburst, F-Melt). The properties of the prepared tablets such as tensile strength, friability, wetting time and water absorption ratio were evaluated. Disintegration time was measured using the pharmacopoeial method and the novel apparatus constructed by the authors. The apparatus was based on the idea of Narazaki et al., however it has been modified. Magnetic resonance imaging (MRI) was applied for the analysis of the disintegration mechanism of prepared tablets. The research has shown the significant effect of excipients, compression force, temperature, volume and kind of medium on the disintegration process. The novel apparatus features better correlation of disintegration time with in vivo results (R(2) = 0.9999) than the compendial method (R(2) = 0.5788), and presents additional information on the disintegration process, e.g. swelling properties.

  20. Semiconductor optical amplifier-based all-optical gates for high-speed optical processing

    DEFF Research Database (Denmark)

    Stubkjær, Kristian

    2000-01-01

    Semiconductor optical amplifiers are useful building blocks for all-optical gates as wavelength converters and OTDM demultiplexers. The paper reviews the progress from simple gates using cross-gain modulation and four-wave mixing to the integrated interferometric gates using cross-phase modulation....... These gates are very efficient for high-speed signal processing and open up interesting new areas, such as all-optical regeneration and high-speed all-optical logic functions...

  1. Monitoring apparatus

    International Nuclear Information System (INIS)

    Keats, A.B.

    1981-01-01

    An improved monitoring apparatus for use with process plants, such as nuclear reactors, is described. System failure in the acquisition of data from the plant, owing to stuck signals, is avoided by arranging input signals from transducers in the plant in a test pattern. (U.K.)

  2. Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

    International Nuclear Information System (INIS)

    Watanabe, S.

    1984-01-01

    The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

  3. Process and apparatus for fractionating close-boiling components of a multi-component system

    International Nuclear Information System (INIS)

    Tsao, U.

    1983-01-01

    A process and apparatus are described for the fractionation of close-boiling components of a multi-component system comprising at least two fractionation columns A, B in series having a plurality of equilibrium stages in which the vapor stream from a downstream fractionation column B is compressed by a compressor and passed into a lower portion of a preceding fractionation column A and a liquid bottom stream from any one of said columns except the last is expanded by an orifice sufficiently to convey the resulting liquid-vapor mixture to the upper portion of the next fractionation column B. In a particularly preferred embodiment, the compressed overhead vapor stream is passed in heat transfer relationship to a liquid stream withdrawn from the preceding fractionation column A prior to introduction into the lower portion of such preceding fractionation column A. In one of the claims, the multi-component close-boiling system is a deuterium oxide-water solution. (author)

  4. CVD apparatus and process for the preparation of fiber-reinforced ceramic composites

    Science.gov (United States)

    Caputo, A.J.; Devore, C.E.; Lowden, R.A.; Moeller, H.H.

    1990-01-23

    An apparatus and process for the chemical vapor deposition of a matrix into a preform having circumferentially wound ceramic fibers, comprises heating one surface of the preform while cooling the other surface thereof. The resulting product may have fibers that are wound on radial planes or at an angle from the radial planes. The fibers can also be precoated with pyrolytic carbon before application of the matrix. The matrix is applied by passing reactant gas through the preform thereof to the other side thereof for the initial deposition of matrix near such other surface of the preform. The matrix fills in the preform from the other side surface thereof to the surface of the side of application thereof until a desired amount of matrix has been deposited. 6 figs.

  5. Apparatus and process for removing a predetermined portion of reflective material from mirror

    Science.gov (United States)

    Perry, Stephen J.; Steinmetz, Lloyd L.

    1994-01-01

    An apparatus and process are disclosed for removal of a stripe of soft reflective material of uniform width from the surface of a mirror by using a blade having a large included angle to inhibit curling of the blade during the cutting operation which could result in damage to the glass substrate of the mirror. The cutting blade is maintained at a low blade angle with respect to the mirror surface to produce minimal chipping along the cut edge and to minimize the force exerted on the coating normal to the glass surface which could deform the flat mirror. The mirror is mounted in a cutting mechanism containing a movable carriage on which the blade is mounted to provide very accurate straightness of the travel of the blade along the mirror.

  6. Exposure Characteristics of Nanoparticles as Process By-products for the Semiconductor Manufacturing Industry.

    Science.gov (United States)

    Choi, Kwang-Min; Kim, Jin-Ho; Park, Ju-Hyun; Kim, Kwan-Sick; Bae, Gwi-Nam

    2015-01-01

    This study aims to elucidate the exposure properties of nanoparticles (NPs; semiconductor manufacturing processes. The measurements of airborne NPs were mainly performed around process equipment during fabrication processes and during maintenance. The number concentrations of NPs were measured using a water-based condensation particle counter having a size range of 10-3,000 nm. The chemical composition, size, and shape of NPs were determined by scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy. The resulting concentrations of NPs ranged from 0.00-11.47 particles/cm(3). The concentration of NPs measured during maintenance showed a tendency to increase, albeit incrementally, compared to that measured during normal conditions (under typical process conditions without maintenance). However, the increment was small. When comparing the mean number concentration and standard deviation (n ± σ) of NPs, the chemical mechanical polishing (CMP) process was the highest (3.45 ± 3.65 particles/cm(3)), and the dry etch (ETCH) process was the lowest (0.11 ± 0.22 particles/cm(3)). The major NPs observed were silica (SiO2) and titania (TiO2) particles, which were mainly spherical agglomerates ranging in size from 25-280 nm. Sampling of semiconductor processes in CMP, chemical vapor deposition, and ETCH reveled NPs were particle size exceeded 100 nm in diffusion, metallization, ion implantation, and wet cleaning/etching process. The results show that the SiO2 and TiO2 are the major NPs present in semiconductor cleanroom environments.

  7. Diagnosing modern semiconductor processes with the new generation of Atomika TXRF systems

    International Nuclear Information System (INIS)

    Dobler, M.; Jung, M.; Greithanner, S.

    2000-01-01

    Responding to the latest demands in semiconductor process technology, ATOMIKA Instruments has developed a new TXRF surface analyzer generation TXRF 8300/8200W for wafer sizes up to 300 mm. This new tool set provides extended automation features for routine measurements in daily quality control as for unconventional demands in scientific work. The efficiency of the systems is illustrated and compared to the older TXRF 8030W generation. Measurement results gained on usual contaminated wafer surfaces as well as on new semiconductor material substrates are presented and prove the advantages of the improvements and novelties. The possibility to perform an analytical study at thin layers to determine layer thickness and density is demonstrated. A summary of the newest measurement results using these instruments and an outlook for further developments is given. (author)

  8. Fast optical recording media based on semiconductor nanostructures for image recording and processing

    International Nuclear Information System (INIS)

    Kasherininov, P. G.; Tomasov, A. A.

    2008-01-01

    Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10 6 cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10 -2 V/cm 2 , and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

  9. Process and apparatus for removing layers of liquids floating on the surface of water

    Energy Technology Data Exchange (ETDEWEB)

    1968-11-12

    This apparatus is towed or pushed by suitable means and collects a suitable thickness of the floating liquid and of water. The 2 liquids are then separated, the purified water is rejected outboard, and the polluting liquid is collected in a reservoir of the apparatus, from which it can easily be pumped and recovered in tanks.

  10. A new method for wafer quality monitoring using semiconductor process big data

    Science.gov (United States)

    Sohn, Younghoon; Lee, Hyun; Yang, Yusin; Jun, Chungsam

    2017-03-01

    In this paper we proposed a new semiconductor quality monitoring methodology - Process Sensor Log Analysis (PSLA) - using process sensor data for the detection of wafer defectivity and quality monitoring. We developed exclusive key parameter selection algorithm and user friendly system which is able to handle large amount of big data very effectively. Several production wafers were selected and analyzed based on the risk analysis of process driven defects, for example alignment quality of process layers. Thickness of spin-coated material can be measured using PSLA without conventional metrology process. In addition, chip yield impact was verified by matching key parameter changes with electrical die sort (EDS) fail maps at the end of the production step. From this work, we were able to determine that process robustness and product yields could be improved by monitoring the key factors in the process big data.

  11. Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma

    International Nuclear Information System (INIS)

    Oh, Changhoon; Ryoo, Hoonchul; Lee, Hyungwoo; Hahn, Jae W.; Kim, Se-Yeon; Yi, Hun-Jung

    2010-01-01

    We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatial resolution of the SROES for the variation of pinhole size, and our calculated results were in good agreement with the measured spatial variation of the constructed SROES. The performance of the SROES was also verified by detecting the correlation between the distribution of a fluorine radical in inductively coupled plasma etch process and the etch rate of a SiO 2 film on a silicon wafer.

  12. On the use of the plasma in III-V semiconductor processing

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, G.; Capezzuto, P.; Losurdo, M. [C.N.R.-Centro di Studio per la Chimica dei Plasmi Dipartimento di Chimica-Universita di Bari via Orabona, 4-70126 Bari (Italy)

    1996-03-01

    The manufacture of usable devices based on III-V semiconductor materials is a complex process requiring epilayer growth, anisotropic etching, defect passivation, surface oxidation and substrate preparation processes. The combination of plasma based methods with metalorganic chemical vapor deposition (MOCVD) offers some real advantages: {ital in} {ital situ} production and preactivation of PH{sub 3} and sample preparation using H-atom. The detailed understanding and use of the plasma (using mass spectrometry, optical emission spectroscopy, laser reflectance interferometry and spectroscopic ellipsometry) as applied to InP material is discussed. {copyright} {ital 1996 American Institute of Physics.}

  13. Abatement of waste gases and water during the processes of semiconductor fabrication.

    Science.gov (United States)

    Wen, Rui-mei; Liang, Jun-wu

    2002-10-01

    The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

  14. Nanostructured p-Type Semiconductor Electrodes and Photoelectrochemistry of Their Reduction Processes

    Directory of Open Access Journals (Sweden)

    Matteo Bonomo

    2016-05-01

    Full Text Available This review reports the properties of p-type semiconductors with nanostructured features employed as photocathodes in photoelectrochemical cells (PECs. Light absorption is crucial for the activation of the reduction processes occurring at the p-type electrode either in the pristine or in a modified/sensitized state. Beside thermodynamics, the kinetics of the electron transfer (ET process from photocathode to a redox shuttle in the oxidized form are also crucial since the flow of electrons will take place correctly if the ET rate will overcome that one of recombination and trapping events which impede the charge separation produced by the absorption of light. Depending on the nature of the chromophore, i.e., if the semiconductor itself or the chemisorbed dye-sensitizer, different energy levels will be involved in the cathodic ET process. An analysis of the general properties and requirements of electrodic materials of p-type for being efficient photoelectrocatalysts of reduction processes in dye-sensitized solar cells (DSC will be given. The working principle of p-type DSCs will be described and extended to other p-type PECs conceived and developed for the conversion of the solar radiation into chemical products of energetic/chemical interest like non fossil fuels or derivatives of carbon dioxide.

  15. Digital approach to high-resolution pulse processing for semiconductor detectors

    International Nuclear Information System (INIS)

    Georgiev, A.; Buchner, A.; Gast, W.; Lieder, R.M.

    1992-01-01

    A new design philosophy for processing signals produced by high resolution, large volume semiconductor detectors is described. These detectors, to be used in the next generation of spectrometer arrays for nuclear research (i.e. EUROBALL, etc.), present a set of problems like resolution degradation due to charge trapping and ballistic defect effects, low resolution at a high count rate, poor long term stability, etc. To solve these problems, a new design approach has been developed, including reconstruction of the event charge, providing a pure triangular residual function, and suppressing low frequency noise. 5 refs., 4 figs

  16. Digital approach to high-resolution pulse processing for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Georgiev, A [Sofia Univ. (Bulgaria); Buchner, A [Forschungszentrum Rossendorf (Germany); Gast, W; Lieder, R M [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Kernphysik; Stein, J [Target System Electronic GmbH, Solingen, (Germany)

    1992-08-01

    A new design philosophy for processing signals produced by high resolution, large volume semiconductor detectors is described. These detectors, to be used in the next generation of spectrometer arrays for nuclear research (i.e. EUROBALL, etc.), present a set of problems like resolution degradation due to charge trapping and ballistic defect effects, low resolution at a high count rate, poor long term stability, etc. To solve these problems, a new design approach has been developed, including reconstruction of the event charge, providing a pure triangular residual function, and suppressing low frequency noise. 5 refs., 4 figs.

  17. On-line data processing apparatus for spectroscopic measurements of atomic uranium

    International Nuclear Information System (INIS)

    Miron, E.; Levin, L.A.; Erez, G; Baumatz, D; Goren, I.; Shpancer, I.

    1977-01-01

    A computer-based apparatus for on-line spectroscopic measurements of atomic uranium is described. The system is capable of enhancing the signal-to-noise ratio by averaging, and performing calculations. Computation flow charts and programs are included

  18. Radiography apparatus

    International Nuclear Information System (INIS)

    Redmayne, I.G.B.

    1985-01-01

    Apparatus for the inspection of pipe welds comprises a radiation source for transmitting radiation, say as X-rays, through a pipe weld and a detector in a box arranged diametrically opposite the source, with respect to the pipe, for detecting the transmitted radiation and providing electrical signals which are processed to produce an image of the weld. The source and detector are mounted on a frame which is rotatable about an inner frame clamped to the pipe. (author)

  19. Method and apparatus for signal processing in a sensor system for use in spectroscopy

    Science.gov (United States)

    O'Connor, Paul [Bellport, NY; DeGeronimo, Gianluigi [Nesconset, NY; Grosholz, Joseph [Natrona Heights, PA

    2008-05-27

    A method for processing pulses arriving randomly in time on at least one channel using multiple peak detectors includes asynchronously selecting a non-busy peak detector (PD) in response to a pulse-generated trigger signal, connecting the channel to the selected PD in response to the trigger signal, and detecting a pulse peak amplitude. Amplitude and time of arrival data are output in first-in first-out (FIFO) sequence. An apparatus includes trigger comparators to generate the trigger signal for the pulse-receiving channel, PDs, a switch for connecting the channel to the selected PD, and logic circuitry which maintains the write pointer. Also included, time-to-amplitude converters (TACs) convert time of arrival to analog voltage and an analog multiplexer provides FIFO output. A multi-element sensor system for spectroscopy includes detector elements, channels, trigger comparators, PDs, a switch, and a logic circuit with asynchronous write pointer. The system includes TACs, a multiplexer and analog-to-digital converter.

  20. Large area SiC coating technology of RBSC for semiconductor processing component

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described.

  1. Large area SiC coating technology of RBSC for semiconductor processing component

    International Nuclear Information System (INIS)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described

  2. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  3. Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

    Science.gov (United States)

    Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

    2016-06-28

    Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

  4. Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.

    Science.gov (United States)

    Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A

    2014-07-03

    The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).

  5. Portable pulse X-ray micro and nanosecond range apparatus for studying fast-going processes in opaque media

    International Nuclear Information System (INIS)

    Goganov, D.A.; Komyak, N.I.; Pelix, E.A.

    Pulse X-radiography (X-ray flash duration in the order of 10 -6 -10 -9 sec) is the principal method for studying fast-going processes in opaque media by serial and parallel radiographic imaging. Description is given and main features are outlined of pulse X-ray apparatus IRA-4b, 5b, 6b producing X-radiation flashes from 0.3 μsec to 10-20 nsec in duration

  6. Single-step solution processing of small-molecule organic semiconductor field-effect transistors at high yield

    NARCIS (Netherlands)

    Yu, Liyang; Li, X.; Pavlica, E.; Loth, M.A.; Anthony, J.E.; Bratina, G.; Kjellander, B.K.C.; Gelinck, G.H.; Stutzmann, N.

    2011-01-01

    Here, we report a simple, alternative route towards high-mobility structures of the small-molecular semiconductor 5,11-bis(triethyl silylethynyl) anthradithiophene that requires one single processing step without the need for any post-deposition processing. The method relies on careful control of

  7. Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

    Science.gov (United States)

    Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

    2016-01-01

    Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

  8. Apparatus suitable for plasma surface treating and process for preparing membrane layers

    NARCIS (Netherlands)

    1988-01-01

    The invention relates to an apparatus suitable for plasma surface treating (e.g. forming a membrane layer on a substrate) which comprises a plasma generation section (2) which is in communication via at least one plasma inlet means (4) (e.g. a nozzle) with an enclosed plasma treating section (3)

  9. Method and apparatus for measuring electromagnetic radiation

    Science.gov (United States)

    Been, J. F. (Inventor)

    1973-01-01

    An apparatus and method are described in which the capacitance of a semiconductor junction subjected to an electromagnetic radiation field is utilized to indicate the intensity or strength of the radiation.

  10. EFFICIENCY INCREASE OF MASTERING PROCESS OF PHYSICS CONCEPTUAL APPARATUS BY STUDENTS THOUGHT THE INSTRUMENTALITY OF MULTIMEDIA FACILITIES

    Directory of Open Access Journals (Sweden)

    Olga P. Pinchuk

    2010-09-01

    Full Text Available The relevance of the article material specified the change of accent in school subjects teaching from the transmission of knowledge to forming of students’ ability and willingness to use this knowledge in the real vital situations. The elements of forming method of students’ conceptual apparatus on the lessons of physics are offered. The process of mastering of scientific knowledge system by students with the use of different working methods with conceptual apparatus of physics is described. Use of multimedia technologies on the different stages of teacher’s activity is studied. The author considers research of possibilities of combination of the free communication with an audience with the use of computer device and co-operation of means of network technologies and telecommunications with an educational purpose to be perspective.

  11. Very Low-Power Consumption Analog Pulse Processing ASIC for Semiconductor Radiation Detectors

    International Nuclear Information System (INIS)

    Wessendorf, K.O.; Lund, J.C.; Brunett, B.A.; Laguna, G.R.; Clements, J.W.

    1999-01-01

    We describe a very-low power consumption circuit for processing the pulses from a semiconductor radiation detector. The circuit was designed for use with a cadmium zinc telluride (CZT) detector for unattended monitoring of stored nuclear materials. The device is intended to be battery powered and operate at low duty-cycles over a long period of time. This system will provide adequate performance for medium resolution gamma-ray pulse-height spectroscopy applications. The circuit incorporates the functions of a charge sensitive preamplifier, shaping amplifier, and peak sample and hold circuit. An application specific integrated circuit (ASIC) version of the design has been designed, built and tested. With the exception of the input field effect transistor (FET), the circuit is constructed using bipolar components. In this paper the design philosophy and measured performance characteristics of the circuit are described

  12. Heat and mass transfer in semiconductor melts during single-crystal growth processes

    Science.gov (United States)

    Kakimoto, Koichi

    1995-03-01

    The quality of large semiconductor crystals grown from melts is significantly affected by the heat and mass transfer in the melts. The current understanding of the phenomena, especially melt convection, is reviewed starting from the results of visualization using model fluids or silicon melt, and continuing to the detailed numerical calculations needed for quantitative modeling of processing with solidification. The characteristics of silicon flows are also reviewed by focusing on the Coriolis force in the rotating melt. Descriptions of flow instabilities are included that show the level of understanding of melt convection with a low Prandtl number. Based on hydrodynamics, the origin of the silicon flow structure is reviewed, and it is discussed whether silicon flow is completely turbulent or has an ordered structure. The phase transition from axisymmetric to nonaxisymmetric flow is discussed using different geometries. Additionally, surface-tension-driven flow is reviewed for Czochralski crystal growth systems.

  13. Radiative heat transfer analysis in pure water heater used for semiconductor processing

    International Nuclear Information System (INIS)

    Liu, L.H.; Kudo, K.; Mochida, A.; Ogawa, T.; Kadotani, K.

    2004-01-01

    A simplified one-dimensional model is presented to analyze the non-gray radiative transfer in pure water heater used in the rinsing processes within semiconductor production lines, and the ray-tracing method is extended to simulate the radiative heat transfer. To examine the accuracy of the simplified model, the distribution of radiation absorption is determined by the ray-tracing method based the simplified model and compared with the data obtained by three-dimensional non-gray model in combination with Monte Carlo method in reference, and the effects of the water thickness on the radiation absorption are analyzed. The results show that the simplified model has a good accuracy in solving the radiation absorption in the pure water heater. The radiation absorption increases with the water thickness, but when the water thickness is greater than 50 mm, the radiation absorption increases very slowly with the water thickness

  14. Studies of Thermophysical Properties of Metals and Semiconductors by Containerless Processing Under Microgravity

    Science.gov (United States)

    Seidel, A.; Soellner, W.; Stenzel, C.

    2012-01-01

    Electromagnetic levitation under microgravity provides unique opportunities for the investigation of liquid metals, alloys and semiconductors, both above and below their melting temperatures, with minimized disturbances of the sample under investigation. The opportunity to perform such experiments will soon be available on the ISS with the EML payload which is currently being integrated. With its high-performance diagnostics systems EML allows to measure various physical properties such as heat capacity, enthalpy of fusion, viscosity, surface tension, thermal expansion coefficient, and electrical conductivity. In studies of nucleation and solidification phenomena the nucleation kinetics, phase selection, and solidification velocity can be determined. Advanced measurement capabilities currently being studied include the measurement and control of the residual oxygen content of the process atmosphere and a complementary inductive technique to measure thermophysical properties.

  15. Evaluation of semiconductor gas sensor system for ethanol determination during fermentation processes

    Energy Technology Data Exchange (ETDEWEB)

    Picque, D; Corrieu, G

    1988-10-01

    Using commercial gas sensitive semi-conductors, an ethanol sensor has been constructed which operates by direct immersion in fermentation media. The calibration range of 0.1 to 10 or 13 % depending on the component. However, they are very often subjected to considerable drift (in the same case up to 10 %/h of the measured value). The electrical resistance of component may vary by a factor of 1 to 5 for a well-defined ethanol concentration. The effects of temperature changes in fermentation media are easily compensated. Other volatile compounds (methanol, ammonia,...) substantially affect component responses. Thus, all work on sensors requires careful calibration. Wine fermentation processes can be monitored satisfactorily, providing the sensor is recalibrated about every six hours.

  16. Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Fábio F. Vidor

    2015-07-01

    Full Text Available Flexible and transparent electronics have been studied intensively during the last few decades. The technique establishes the possibility of fabricating innovative products, from flexible displays to radio-frequency identification tags. Typically, large-area polymeric substrates such as polypropylene (PP or polyethylene terephthalate (PET are used, which produces new requirements for the integration processes. A key element for flexible and transparent electronics is the thin-film transistor (TFT, as it is responsible for the driving current in memory cells, digital circuits or organic light-emitting devices (OLEDs. In this paper, we discuss some fundamental concepts of TFT technology. Additionally, we present a comparison between the use of the semiconducting organic small-molecule pentacene and inorganic nanoparticle semiconductors in order to integrate TFTs suitable for flexible electronics. Moreover, a technique for integration with a submicron resolution suitable for glass and foil substrates is presented.

  17. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  18. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces

    Science.gov (United States)

    Carr,; Jeffrey, W [Livermore, CA

    2009-03-31

    Fabrication apparatus and methods are disclosed for shaping and finishing difficult materials with no subsurface damage. The apparatus and methods use an atmospheric pressure mixed gas plasma discharge as a sub-aperture polisher of, for example, fused silica and single crystal silicon, silicon carbide and other materials. In one example, workpiece material is removed at the atomic level through reaction with fluorine atoms. In this example, these reactive species are produced by a noble gas plasma from trace constituent fluorocarbons or other fluorine containing gases added to the host argon matrix. The products of the reaction are gas phase compounds that flow from the surface of the workpiece, exposing fresh material to the etchant without condensation and redeposition on the newly created surface. The discharge provides a stable and predictable distribution of reactive species permitting the generation of a predetermined surface by translating the plasma across the workpiece along a calculated path.

  19. Photographic inspection apparatus and process to know the shape and the dimensions of the end parts of steam generator tubes

    International Nuclear Information System (INIS)

    Martin, A.

    1986-01-01

    Before any inspection or repair operation of the tubes of a steam generator, one needs to know the shape and the dimension of the hole of the tube in the near the primary face of the tube plate. The photographic inspection apparatus is moved parallel with the tube plate, inside the water box, such as its optical axis keeps parallel to a determined direction during its displacement. One takes successively photographs of the primary face of the tube plate with the photographic apparatus in different positions, to obtain at least two photographs of each tube to be inspected, under different angles. Photographs are developed at a determined scale of the primary face of the tube plate and of the tube ends. The photographs are oriented two by two to obtain a stereophotogrammetric view of the end parts of each tube. Measurements and examinations are done from the stereophotogrammetric view obtained for each tube, outside the steam generator zone. The invention concerns the process and also the photographic apparatus described in the present patent [fr

  20. Identifying the hazard characteristics of powder byproducts generated from semiconductor fabrication processes.

    Science.gov (United States)

    Choi, Kwang-Min; An, Hee-Chul; Kim, Kwan-Sick

    2015-01-01

    Semiconductor manufacturing processes generate powder particles as byproducts which potentially could affect workers' health. The chemical composition, size, shape, and crystal structure of these powder particles were investigated by scanning electron microscopy equipped with an energy dispersive spectrometer, Fourier transform infrared spectrometry, and X-ray diffractometry. The powders generated in diffusion and chemical mechanical polishing processes were amorphous silica. The particles in the chemical vapor deposition (CVD) and etch processes were TiO(2) and Al(2)O(3), and Al(2)O(3) particles, respectively. As for metallization, WO(3), TiO(2), and Al(2)O(3) particles were generated from equipment used for tungsten and barrier metal (TiN) operations. In photolithography, the size and shape of the powder particles showed 1-10 μm and were of spherical shape. In addition, the powders generated from high-current and medium-current processes for ion implantation included arsenic (As), whereas the high-energy process did not include As. For all samples collected using a personal air sampler during preventive maintenance of process equipment, the mass concentrations of total airborne particles were particles less than 10 μm in diameter) using direct-reading aerosol monitor by area sampling were between 0.00 and 0.02 μg/m(3). Although the exposure concentration of airborne particles during preventive maintenance is extremely low, it is necessary to make continuous improvements to the process and work environment, because the influence of chronic low-level exposure cannot be excluded.

  1. Oxygen and carbon transfer during solidification of semiconductor grade silicon in different processes

    Science.gov (United States)

    Ribeyron, P. J.; Durand, F.

    2000-03-01

    A model is established for comparing the solute distribution resulting from four solidification processes currently applied to semiconductor grade silicon: Czochralski pulling (CZ), floating zone (FZ), 1D solidification and electromagnetic continuous pulling (EMCP). This model takes into account solid-liquid interface exchange, evaporation to or contamination by the gas phase, container dissolution, during steady-state solidification, and in the preliminary preparation of the melt. For simplicity, the transfers are treated in the crude approximation of perfectly mixed liquid and boundary layers. As a consequence, only the axial ( z) distribution can be represented. Published data on oxygen and carbon transfer give a set of acceptable values for the thickness of the boundary layers. In the FZ and EMCP processes, oxygen evaporation can change the asymptotic behaviour of the reference Pfann law. In CZ and in 1D-solidification, a large variety of solute profile curves can be obtained, because they are very sensitive to the balance between crucible dissolution and evaporation. The CZ process clearly brings supplementary degrees of freedom via the geometry of the crucible, important for the dissolution phenomena, and via the rotation rate of the crystal and of the crucible, important for acting on transfer kinetics.

  2. Abatement of global warming gas emissions from semiconductor manufacturing processes by non-thermal plasma-catalyst systems

    Energy Technology Data Exchange (ETDEWEB)

    Chang, J-S.; Urashima, K. [McMaster Univ., McIARS and Dept. Eng. Phys., Hamilton, Ontario (Canada)

    2009-07-01

    Emission of various hazardous air pollutants (HAPs) and greenhouse gases including perfluoro-compounds (PFCs) from semiconductor industries may cause significant impact on human health and the global environment, has attracted much public attention. In this paper, an application of nonthermal plasma-adsorbent system for a removal of PFCs emission from semiconductor process flue gases is experimentally investigated. The non-thermal plasma reactor used is the ferro-electric packed-bed type barrier discharge plasma and adsorbent reactor used is Zeolite bed reactor. The results show that for a simulated semiconductor process flue gas with C{sub 2}F{sub 6} (2000ppm)/ CF{sub 4}(1000ppm)/ N{sub 2}O(1000ppm)/ N{sub 2}/ Air mixture, 54% of C{sub 2}F{sub 6} and 32% of CF{sub 4} were decomposed by the plasma reactor and 100% of C{sub 2}F{sub 6} and 98% of CF{sub 4} were removed by plasma reactor/Zeolite adsorbent hybrid system. For a simulated semiconductor process flue gas with NF{sub 3} (2000ppm)/ SiF{sub 4}(1000ppm)/ N{sub 2}O(200ppm)/ N{sub 2}/ Air mixture, 92% of NF{sub 3} and 32% of SiF{sub 4} were decomposed by the plasma reactor and total (100%) removal of the pollutant gases was achieved by plasma reactor/Zeolite adsorbent hybrid system. (author)

  3. Abatement of global warming gas emissions from semiconductor manufacturing processes by non-thermal plasma-catalyst systems

    International Nuclear Information System (INIS)

    Chang, J-S.; Urashima, K.

    2009-01-01

    Emission of various hazardous air pollutants (HAPs) and greenhouse gases including perfluoro-compounds (PFCs) from semiconductor industries may cause significant impact on human health and the global environment, has attracted much public attention. In this paper, an application of nonthermal plasma-adsorbent system for a removal of PFCs emission from semiconductor process flue gases is experimentally investigated. The non-thermal plasma reactor used is the ferro-electric packed-bed type barrier discharge plasma and adsorbent reactor used is Zeolite bed reactor. The results show that for a simulated semiconductor process flue gas with C 2 F 6 (2000ppm)/ CF 4 (1000ppm)/ N 2 O(1000ppm)/ N 2 / Air mixture, 54% of C 2 F 6 and 32% of CF 4 were decomposed by the plasma reactor and 100% of C 2 F 6 and 98% of CF 4 were removed by plasma reactor/Zeolite adsorbent hybrid system. For a simulated semiconductor process flue gas with NF 3 (2000ppm)/ SiF 4 (1000ppm)/ N 2 O(200ppm)/ N 2 / Air mixture, 92% of NF 3 and 32% of SiF 4 were decomposed by the plasma reactor and total (100%) removal of the pollutant gases was achieved by plasma reactor/Zeolite adsorbent hybrid system. (author)

  4. Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

    Science.gov (United States)

    Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

    2014-02-15

    We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

  5. Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

    Energy Technology Data Exchange (ETDEWEB)

    Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Asakura, Yuji [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Yokoyama, Haruki [NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)

    2014-06-30

    We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

  6. Process for the exchange of hydrogen isotopes between streams of liquid water and gaseous halohydrocarbon and an apparatus therefor

    International Nuclear Information System (INIS)

    Symons, E.A.; Rolston, J.H.; Clermont, M.J.; Paterson, L.M.

    1983-01-01

    This invention provides a process for the exchange of hydrogen isotopes between streams of liquid water and gaseous halohydrocarbons comprising: (a) bringing into contact a water stream, a halohydrocarbon stream, and a catalytic porous anion exchange resin so that the isotope-deficient halohydrocarbon stream is enriched; (b) decomposing the halohydrocarbon stream photolytically into two gaseous streams, one enriched and the other deficient; (c) removing as a product the first, enriched stream; and (d) recycling the second stream for enrichment. An apparatus is also provided

  7. Three-channel face apparatus for monitoring the direction of wells in the drilling process

    Energy Technology Data Exchange (ETDEWEB)

    Sirayev, A Kh; Kovshov, G N; Molchanov, A A

    1979-01-01

    Apparatus has been developed and successfully tested under laboratory and stand conditions for monitoring the direction of wells, using wireless communications channel on the string of drilling pipes. As a result of decrease in the frequency of the transmission signal, use of an LBT with best electrical characteristics, matching of the face transmitter with load and increase in the power of the transmitter, a level of useful signal 30 m V is successfully obtained on the surface from depth 2500 m in high-ohmic sections and 10 mV from depth 1900 m in low-ohmic sections.

  8. Tuning polymorphism and orientation in organic semiconductor thin films via post-deposition processing.

    Science.gov (United States)

    Hiszpanski, Anna M; Baur, Robin M; Kim, Bumjung; Tremblay, Noah J; Nuckolls, Colin; Woll, Arthur R; Loo, Yueh-Lin

    2014-11-05

    Though both the crystal structure and molecular orientation of organic semiconductors are known to impact charge transport in thin-film devices, separately accessing different polymorphs and varying the out-of-plane molecular orientation is challenging, typically requiring stringent control over film deposition conditions, film thickness, and substrate chemistry. Here we demonstrate independent tuning of the crystalline polymorph and molecular orientation in thin films of contorted hexabenzocoronene, c-HBC, during post-deposition processing without the need to adjust deposition conditions. Three polymorphs are observed, two of which have not been previously reported. Using our ability to independently tune the crystal structure and out-of-plane molecular orientation in thin films of c-HBC, we have decoupled and evaluated the effects that molecular packing and orientation have on device performance in thin-film transistors (TFTs). In the case of TFTs comprising c-HBC, polymorphism and molecular orientation are equally important; independently changing either one affects the field-effect mobility by an order of magnitude.

  9. Optimal design of advanced distillation configuration for enhanced energy efficiency of waste solvent recovery process in semiconductor industry

    International Nuclear Information System (INIS)

    Chaniago, Yus Donald; Minh, Le Quang; Khan, Mohd Shariq; Koo, Kee-Kahb; Bahadori, Alireza; Lee, Moonyong

    2015-01-01

    Highlights: • Thermally coupled distillation process is proposed for waste solvent recovery. • A systematic optimization procedure is used to optimize distillation columns. • Response surface methodology is applied to optimal design of distillation column. • Proposed advanced distillation allows energy efficient waste solvent recovery. - Abstract: The semiconductor industry is one of the largest industries in the world. On the other hand, the huge amount of solvent used in the industry results in high production cost and potential environmental damage because most of the valuable chemicals discharged from the process are incinerated at high temperatures. A distillation process is used to recover waste solvent, reduce the production-related costs and protect the environment from the semiconductor industrial waste. Therefore, in this study, a distillation process was used to recover the valuable chemicals from semiconductor industry discharge, which otherwise would have been lost to the environment. The conventional sequence of distillation columns, which was optimized using the Box and sequential quadratic programming method for minimum energy objectives, was used. The energy demands of a distillation problem may have a substantial influence on the profitability of a process. A thermally coupled distillation and heat pump-assisted distillation sequence was implemented to further improve the distillation performance. Finally, a comparison was made between the conventional and advanced distillation sequences, and the optimal conditions for enhancing recovery were determined. The proposed advanced distillation configuration achieved a significant energy saving of 40.5% compared to the conventional column sequence

  10. Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing

    Science.gov (United States)

    De Biasio, M.; Kraft, M.; Schultz, M.; Goller, B.; Sternig, D.; Esteve, R.; Roesner, M.

    2017-05-01

    Silicon carbide (SiC) is a wide band-gap semi-conductor material that is used increasingly for high voltage power devices, since it has a higher breakdown field strength and better thermal conductivity than silicon. However, in particular its hardness makes wafer processing difficult and many standard semi-conductor processes have to be specially adapted. We measure the effects of (i) mechanical processing (i.e. grinding of the backside) and (ii) chemical and thermal processing (i.e. doping and annealing), using confocal microscopy to measure the surface roughness of ground wafers and micro-Raman spectroscopy to measure the stresses induced in the wafers by grinding. 4H-SiC wafers with different dopings were studied before and after annealing, using depth-resolved micro-Raman spectroscopy to observe how doping and annealing affect: i.) the damage and stresses induced on the crystalline structure of the samples and ii.) the concentration of free electrical carriers. Our results show that mechanical, chemical and thermal processing techniques have effects on this semiconductor material that can be observed and characterized using confocal microscopy and high resolution micro Raman spectroscopy.

  11. Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

    International Nuclear Information System (INIS)

    Govindaraju, N.; Singh, R.N.

    2011-01-01

    Highlights: → Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. → Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. → Temperatures below 290 deg. C for Si devices and 320 deg. C for HEMTs prevent metal damage. → Development of novel NCD-based thermal management for power electronics feasible. - Abstract: High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 deg. C for Si devices and below 320 deg. C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

  12. Treatment of exhaust gas from the semiconductor manufacturing process. 3; Handotai seizo sochi kara no hai gas shori. 3

    Energy Technology Data Exchange (ETDEWEB)

    Fukunaga, A. [Ebara Research Co. Ltd., Kanagawa (Japan); Mori, Y.; Osato, M.; Tsujimura, M. [Ebara Corp., Tokyo (Japan)

    1995-10-20

    Demand has been building up for an individual dry type scrubber for treating exhaust gas from the semiconductor manufacturing process. Some factors for the wide acceptance of such a scrubber would be the capability for complete treatment, easy maintenance and safety features, etc. Practical gas analysis and optimum scrubbing techniques would have to be applied, as well as effective monitoring, alarm, and fail-safe techniques. The overall exhaust gas line, i.e. the line connecting the scrubber system and the upstream process, including that extending to pump system, has to be fully considered for enabling effective scrubbing performance. Such factors, which have until now not been given any priority, would have to be fully studied for the development of a practical, individual dry type scrubber. Cooperation on this matter from the semiconductor manufacturing industry would also be essential. 6 refs., 3 figs., 5 tabs.

  13. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  14. Process monitoring in high volume semiconductor production environment with in-fab TXRF

    International Nuclear Information System (INIS)

    Ghatak-Roy, A.R.; Hossain, T.Z.

    2000-01-01

    After its introduction in the 80's, TXRF has become an important tool for surface contamination analysis. This is particularly true for the semiconductor industries, where monitoring trace level contamination in ultra clean environment is absolutely necessary for successful device production with reasonable yield. In FAB 25 of the Advanced Micro Devices in Austin, we have installed two TXRF tools, which are model TXRF3750 manufactured by Rigaku. They contain rotating tungsten anodes with three beam capability for wide selection of elements. One of the beams (WM) is used for monitoring of low Z elements such as Na, Mg and Al. The standard output is 9 kW with 300 mA at 30 kV. The tool runs 24 hours a day, 7 days a week, except for maintenance and breakdowns. We have been using TXRF for in-fab monitoring of various tools and processes for trace contamination and some quantification of materials. This in-fab operation is important because it gives real time monitoring without the necessity of bringing the wafers out of the fab. Secondly, being in ultra clean fab environment, the risk of background contamination is minimized. Since TXRF measurement is fast and does not need any sample preparation, this works very well as production support tool. Several wafer fab technicians have been trained to use the tool for round the clock operation. We have successfully monitored tools and processes in our fab. One example is the monitoring of numerous sinks used in the cleaning of production wafers after various processes. Monitor wafers are run after sink cleaning and solvent changes and they are then analyzed for any contamination. Another example is the monitoring of tools that use Ferrofluidic seals so as to prevent any contamination from Fe and Cr. Other tools using TXRF include diffusion furnaces, etchers and plasma cleaning tools. We have also been monitoring processes such as ion implantation, metal deposition and rapid thermal annealing. In this presentation, we will

  15. From Coherently Excited Highly Correlated States to Incoherent Relaxation Processes in Semiconductors

    International Nuclear Information System (INIS)

    Scha''fer, W.; Lo''venich, R.; Fromer, N. A.; Chemla, D. S.

    2001-01-01

    Recent theories of highly excited semiconductors are based on two formalisms, referring to complementary experimental conditions, the real-time nonequilibrium Green's function techniques and the coherently controlled truncation of the many-particle problem. We present a novel many-particle theory containing both of these methods as limiting cases. As a first example of its application, we investigate four-particle correlations in a strong magnetic field including dephasing resulting from the growth of incoherent one-particle distribution functions. Our results are the first rigorous solution concerning formation and decay of four-particle correlations in semiconductors. They are in excellent agreement with experimental data

  16. Non-markovian effects in semiconductor cavity QED: Role of phonon-mediated processes

    DEFF Research Database (Denmark)

    Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter

    We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from the pola......We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from...... the polaritonic quasi-particle nature of the carrier-photon system interacting with the phonon reservoir....

  17. Microwave photonics processing controlling the speed of light in semiconductor waveguides

    DEFF Research Database (Denmark)

    Xue, Weiqi; Chen, Yaohui; Sales, Salvador

    2009-01-01

    We review the theory of slow and fast light effect in semiconductor waveguides and potential applications of these effects in microwave photonic systems as RF phase shifters. Recent applications as microwave photonic filters is presented. Also, in the presentation more applications like optoelect......We review the theory of slow and fast light effect in semiconductor waveguides and potential applications of these effects in microwave photonic systems as RF phase shifters. Recent applications as microwave photonic filters is presented. Also, in the presentation more applications like...

  18. Application of statistical methods (SPC) for an optimized control of the irradiation process of high-power semiconductors

    International Nuclear Information System (INIS)

    Mittendorfer, J.; Zwanziger, P.

    2000-01-01

    High-power bipolar semiconductor devices (thyristors and diodes) in a disc-type shape are key components (semiconductor switches) for high-power electronic systems. These systems are important for the economic design of energy transmission systems, i.e. high-power drive systems, static compensation and high-voltage DC transmission lines. In their factory located in Pretzfeld, Germany, the company, eupec GmbH+Co.KG (eupec), is producing disc-type devices with ceramic encapsulation in the high-end range for the world market. These elements have to fulfill special customer requirements and therefore deliver tailor-made trade-offs between their on-state voltage and dynamic switching behaviour. This task can be achieved by applying a dedicated electron irradiation on the semiconductor pellets, which tunes this trade-off. In this paper, the requirements to the irradiation company Mediscan GmbH, from the point of view of the semiconductor manufacturer, are described. The actual strategy for controlling the irradiation results to fulfill these requirements are presented, together with the choice of relevant parameters from the viewpoint of the irradiation company. The set of process parameters monitored, using statistical process control (SPC) techniques, includes beam current and energy, conveyor speed and irradiation geometry. The results are highlighted and show the successful co-operation in this business. Watching this process vice versa, an idea is presented and discussed to develop the possibilities of a highly sensitive dose detection device by using modified diodes, which could function as accurate yet cheap and easy-to-use detectors as routine dosimeters for irradiation institutes. (author)

  19. Feature scale modeling for etching and deposition processes in semiconductor manufacturing

    International Nuclear Information System (INIS)

    Pyka, W.

    2000-04-01

    Simulation of etching and deposition processes as well as three-dimensional geometry generation are important issues in state of the art TCAD applications. Three-dimensional effects are gaining importance for semiconductor devices and for their interconnects. Therefore a strictly physically based simulation of their topography is required. Accurate investigation of single etching and deposition processes has become equally important as process integration. Within this context several aspects of three-dimensional topography simulation have been covered by this thesis and new and interesting results have been achieved in various areas. The algorithmic core of the cell-based structuring element surface propagation method has been optimized and has been eliminated from its position as factor which predominantly determines the required CPU time. In parallel with investigated optimization techniques and required by various process models, the implementation of the surface normal calculation and the special handling of voids and unconnected parts of the geometry has been completed in three dimensions. A process-step-based solid modeling tool which incorporates layout data as well as aerial image simulation has been supplied. It can be coupled with the topography simulation and includes simple geometrically based models for CMP and oxidation. In the presented combination, the tool makes use of the design information stored in the layout file, combines it with the manufacturing recipe, and hence is extremely helpful for the automatic generation of three-dimensional structures. Its usefulness has been proven with several interconnect examples. Regarding topography models, resist development not only turned out to be very helpful for predicting exposed and etched resist profiles within a rigorous lithography simulation, but, by means of benchmark examples, also demonstrated the extraordinary stability of the proposed cellular surface movement algorithm. With respect to

  20. Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors.

    Science.gov (United States)

    Hu, Yuanyuan; Rengert, Zachary D; McDowell, Caitlin; Ford, Michael J; Wang, Ming; Karki, Akchheta; Lill, Alexander T; Bazan, Guillermo C; Nguyen, Thuc-Quyen

    2018-04-24

    Solution-processed organic field-effect transistors (OFETs) were fabricated with the addition of an organic salt, trityl tetrakis(pentafluorophenyl)borate (TrTPFB), into thin films of donor-acceptor copolymer semiconductors. The performance of OFETs is significantly enhanced after the organic salt is incorporated. TrTPFB is confirmed to p-dope the organic semiconductors used in this study, and the doping efficiency as well as doping physics was investigated. In addition, systematic electrical and structural characterizations reveal how the doping enhances the performance of OFETs. Furthermore, it is shown that this organic salt doping method is feasible for both p- and n-doping by using different organic salts and, thus, can be utilized to achieve high-performance OFETs and organic complementary circuits.

  1. Quantifying resistances across nanoscale low- and high-angle interspherulite boundaries in solution-processed organic semiconductor thin films.

    Science.gov (United States)

    Lee, Stephanie S; Mativetsky, Jeffrey M; Loth, Marsha A; Anthony, John E; Loo, Yueh-Lin

    2012-11-27

    The nanoscale boundaries formed when neighboring spherulites impinge in polycrystalline, solution-processed organic semiconductor thin films act as bottlenecks to charge transport, significantly reducing organic thin-film transistor mobility in devices comprising spherulitic thin films as the active layers. These interspherulite boundaries (ISBs) are structurally complex, with varying angles of molecular orientation mismatch along their lengths. We have successfully engineered exclusively low- and exclusively high-angle ISBs to elucidate how the angle of molecular orientation mismatch at ISBs affects their resistivities in triethylsilylethynyl anthradithiophene thin films. Conductive AFM and four-probe measurements reveal that current flow is unaffected by the presence of low-angle ISBs, whereas current flow is significantly disrupted across high-angle ISBs. In the latter case, we estimate the resistivity to be 22 MΩμm(2)/width of the ISB, only less than a quarter of the resistivity measured across low-angle grain boundaries in thermally evaporated sexithiophene thin films. This discrepancy in resistivities across ISBs in solution-processed organic semiconductor thin films and grain boundaries in thermally evaporated organic semiconductor thin films likely arises from inherent differences in the nature of film formation in the respective systems.

  2. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  3. Epitaxial growth and processing of InP films in a ``novel`` remote plasma-MOCVD apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, G. [Bari Univ. (Italy). Centro di Studio per la Chimica; Losurdo, M. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capezzuto, P. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capozzi, V. [Bari Univ. (Italy). Ist. di Fisica; Lorusso, F.G. [Bari Univ. (Italy). Ist. di Fisica; Minafra, A. [Bari Univ. (Italy). Ist. di Fisica

    1996-06-01

    A new remote plasma MOCVD apparatus for the treatment and deposition of III-V materials and, specifically, of indium phosphide, has been developed. The plasma source is used to produce hydrogen atoms and to predissociate phosphine for, respectively, the reduction of native oxide on InP substrate surface and the InP deposition. In situ diagnostics by optical emission spectroscopy, mass spectrometry, and spectroscopic ellipsometry are used to fingerprint the gas phase and the growth surface. The plasma cleaning process effectively reduce the InP oxide layer without surface damage. Indium phosphide epilayers deposited from trimethylindium and plasma activated PH{sub 3} show singular photoluminescence spectra with signal intensity higher than that of the best InP film deposited under conventional MOCVD condition (without PH{sub 3} plasma preactivation). (orig.)

  4. Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots

    Energy Technology Data Exchange (ETDEWEB)

    Paiella, Roberto [Boston Univ., MA (United States); Moustakas, Theodore D. [Boston Univ., MA (United States)

    2017-07-31

    This document reviews a research program funded by the DOE Office of Science, which has been focused on the control of radiation and absorption processes in semiconductor photonic materials (including III-nitride quantum wells and quantum dots), through the use of specially designed metallic nanoparticles (NPs). By virtue of their strongly confined plasmonic resonances (i.e., collective oscillations of the electron gas), these nanostructures can concentrate incident radiation into sub-wavelength “hot spots” of highly enhanced field intensity, thereby increasing optical absorption by suitably positioned absorbers. By reciprocity, the same NPs can also dramatically increase the spontaneous emission rate of radiating dipoles located within their hot spots. The NPs can therefore be used as optical antennas to enhance the radiation output of the underlying active material and at the same time control the far-field pattern of the emitted light. The key accomplishments of the project include the demonstration of highly enhanced light emission efficiency as well as plasmonic collimation and beaming along geometrically tunable directions, using a variety of plasmonic excitations. Initial results showing the reverse functionality (i.e., plasmonic unidirectional absorption and photodetection) have also been generated with similar systems. Furthermore, a new paradigm for the near-field control of light emission has been introduced through rigorous theoretical studies, based on the use of gradient metasurfaces (i.e., optical nanoantenna arrays with spatially varying shape, size, and/or orientation). These activities have been complemented by materials development efforts aimed at the synthesis of suitable light-emitting samples by molecular beam epitaxy. In the course of these efforts, a novel technique for the growth of III-nitride quantum dots has also been developed (droplet heteroepitaxy), with several potential advantages in terms of compositional and geometrical

  5. Interface evolution and shear strength of Al/Ti bi-metals processed by a spark plasma sintering (SPS) apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Miriyev, Aslan, E-mail: aslan.miriyev@columbia.edu [Department of Mechanical Engineering, Columbia University in the City of New York, 500 W. 120th St., Mudd 220, New York, NY 10027 (United States); Levy, Asaf; Kalabukhov, Sergey; Frage, Nachum [Department of Materials Engineering, Ben-Gurion University of the Negev, P.O.B. 653, Beer Sheva 8410501 (Israel)

    2016-09-05

    Microstructural evolution of the Al/Ti bi-metal interface during heat treatment in a spark plasma sintering (SPS) apparatus was investigated under various conditions for the first time. A mechanism of interfacial layer growth was suggested based on the results of SEM, TEM and X-ray diffraction analysis. A continuous TiAl{sub 3} intermetallic layer was formed at the Al/Ti interface even after a processing time as short as about a minute. The TiAl{sub 3} layer grew mainly into the Ti part, while only a few individual grains grew into the Al part. Evolution of the interlayer was determined by Al diffusion through the (TiAl{sub 3}/TiAl{sub 3}) grain boundary. The activation energy of the process was 140 kJ/mol. The shear strength of the interface in the Al/Ti bi-metal was determined after various heat treatments. The shear strength of the bi-metal was limited by the properties of aluminum, with no effect of interlayer thickness or current mode and pulse pattern of the SPS treatment being detected. - Highlights: • Spark plasma sintering apparatus was used for heat treatment of Al/Ti bi-metals. • Microstructural evolution of Al/Ti interface during SPS treatment was investigated. • A continuous TiAl{sub 3} intermetallic layer was formed at the Al/Ti interface. • The bi-metal shear strength was limited by the properties of pure aluminum. • No effect of TiAl{sub 3} thickness or SPS current mode and pulse pattern was detected.

  6. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  7. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.

    2015-02-13

    Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

  8. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  9. Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

    Science.gov (United States)

    Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

    1994-01-01

    Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

  10. Method and apparatus for rapid adjustment of process gas inventory in gaseous diffusion cascades

    International Nuclear Information System (INIS)

    1980-01-01

    A method is specified for the operation of a gaseous diffusion cascade wherein electrically driven compressors circulate a process gas through a plurality of serially connected gaseous diffusion stages to establish first and second countercurrently flowing cascade streams of process gas, one of the streams being at a relatively low pressure and enriched in a component of the process gas and the other being at a higher pressure and depleted in the same, and wherein automatic control systems maintain the stage process gas pressures by positioning process gas flow control valve openings at values which are functions of the difference between reference-signal inputs to the systems, and signal inputs proportional to the process gas pressures in the gaseous diffusion stages associated with the systems, the cascade process gas inventory being altered, while the cascade is operating, by simultaneously directing into separate process-gas freezing zones a plurality of substreams derived from one of the first and second streams at different points along the lengths thereof to solidify approximately equal weights of process gas in the zone while reducing the reference-signal inputs to maintain the positions of the control valves substantially unchanged despite the removal of process gas inventory via the substreams. (author)

  11. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  12. Apparatus and method for enhanced chemical processing in high pressure and atmospheric plasmas produced by high frequency electromagnetic waves

    Science.gov (United States)

    Efthimion, Philip C.; Helfritch, Dennis J.

    1989-11-28

    An apparatus and method for creating high temperature plasmas for enhanced chemical processing of gaseous fluids, toxic chemicals, and the like, at a wide range of pressures, especially at atmospheric and high pressures includes an electro-magnetic resonator cavity, preferably a reentrant cavity, and a wave guiding structure which connects an electro-magnetic source to the cavity. The cavity includes an intake port and an exhaust port, each having apertures in the conductive walls of the cavity sufficient for the intake of the gaseous fluids and for the discharge of the processed gaseous fluids. The apertures are sufficiently small to prevent the leakage of the electro-magnetic radiation from the cavity. Gaseous fluid flowing from the direction of the electro-magnetic source through the guiding wave structure and into the cavity acts on the plasma to push it away from the guiding wave structure and the electro-magnetic source. The gaseous fluid flow confines the high temperature plasma inside the cavity and allows complete chemical processing of the gaseous fluids at a wide range of pressures.

  13. Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

    Science.gov (United States)

    Isik, Dilek

    This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

  14. Process and apparatus to localize equipments inside a tube, particularly to obtain a radiogaphy

    International Nuclear Information System (INIS)

    Redmayne, I.

    1979-01-01

    Process for positionning a device inside a tube, at less than one millimeter, for examination, especially by radiography, or for an inside treatment, by means of a magnetic field and a magnetic detector [fr

  15. Method and apparatus for rapid adjustment of process gas inventory in gaseous diffusion cascades

    International Nuclear Information System (INIS)

    Dyer, R.H.; Fowler, A.H.; Vanstrum, P.R.

    1977-01-01

    The invention relates to an improved method and system for making relatively large and rapid adjustments in the process gas inventory of an electrically powered gaseous diffusion cascade in order to accommodate scheduled changes in the electrical power available for cascade operation. In the preferred form of the invention, the cascade is readied for a decrease in electrical input by simultaneously withdrawing substreams of the cascade B stream into respective process-gas-freezing and storage zones while decreasing the datum-pressure inputs to the positioning systems for the cascade control valves in proportion to the weight of process gas so removed. Consequently, the control valve positions are substantially unchanged by the reduction in invention, and there is minimal disturbance of the cascade isotopic gradient. The cascade is readied for restoration of the power cut by simultaneously evaporating the solids in the freezing zones to regenerate the process gas substreams and introducing them to the cascade A stream while increasing the aforementioned datum pressure inputs in proportion to the weight of process gas so returned. In the preferred form of the system for accomplishing these operations, heat exchangers are provided for freezing, storing, and evaporating the various substreams. Preferably, the heat exchangers are connected to use existing cascade auxiliary systems as a heat sink. A common control is employed to adjust and coordinate the necessary process gas transfers and datum pressure adjustments

  16. Process and apparatus for separating and recovering krypton-85 from exhaust gas of nuclear reactor or the like

    International Nuclear Information System (INIS)

    Yusa, H.; Kamiya, K.; Murata, T.; Yamaki, H.; Hisatomi, S.

    1975-01-01

    An apparatus is described for separating and recovering radioactive krypton-85 contained in an exhaust gas of a nuclear reactor or the like, which comprises a plurality of adsorption beds connected in parallel with respect to a passageway for the exhaust gas, each being packed with activated carbon, wherein adsorption and desorption of krypton-85 in each of the beds are alternatively and repeatedly performed by operating valves disposed between each of the beds and means for reducing pressure in the beds to be desorbed in accordance with a predetermined time schedule. The adsorption and concentration efficiencies are markedly increased by combining the above adsorption apparatus and a distillation apparatus

  17. Investigation into the cause of leak in the pipe of the corrosion test apparatus of IS process

    International Nuclear Information System (INIS)

    Tanaka, Nobuyuki; Furukawa, Tomohiro; Inagaki, Yoshiyuki; Suwa, Hirokazu

    2008-12-01

    The thermochemical water-splitting hydrogen production IS process utilizes corrosive chemicals such as sulfuric acid and hydriodic acid. Corrosion tests in IS process environments have been carried out to get the corrosion data of materials. In the corrosion test in 90wt% sulfuric acid at 400degC, the leak of sulfuric acid was observed in a pipe connected with a reflux condenser. The cause of the leakage is a significant knowledge for the operation of the test apparatus. Therefore the cause was investigated. A 1mm wide through hole was detected in the pipe around the welding bead. By visual observation after cutting the pipe, the wall thickness of the pipe became thin at the inside welding bead around the through hole. In addition, EMPA showed that the inhomogeneous distribution of the constituent elements of the pipe was observed around the through hole. For these reasons, it is estimated that the lowering of the corrosion resistance by the sensitization at the welding caused the leakage. (author)

  18. Method and apparatus for surface characterization and process control utilizing radiation from desorbed particles

    International Nuclear Information System (INIS)

    Feldman, L.C.; Kraus, J.S.; Tolk, N.H.; Traum, M.M.; Tully, J.C.

    1983-01-01

    Emission of characteristic electromagnetic radiation in the infrared, visible, or UV from excited particles, typically ions, molecules, or neutral atoms, desorbed from solid surfaces by an incident beam of low-momentum probe radiation has been observed. Disclosed is a method for characterizing solid surfaces based on the observed effect, with low-momentum probe radiation consisting of electrons or photons. Further disclosed is a method for controlling manufacturing processes that is also based on the observed effect. The latter method can, for instance, be advantageously applied in integrated circuit-, integrated optics-, and magnetic bubble device manufacture. Specific examples of applications of the method are registering of masks, control of a direct-writing processing beam, end-point detection in etching, and control of a processing beam for laser- or electron-beam annealing or ion implantation

  19. Photonic processing and realization of an all-optical digital comparator based on semiconductor optical amplifiers

    Science.gov (United States)

    Singh, Simranjit; Kaur, Ramandeep; Kaler, Rajinder Singh

    2015-01-01

    A module of an all-optical 2-bit comparator is analyzed and implemented using semiconductor optical amplifiers (SOAs). By employing SOA-based cross phase modulation, the optical XNOR logic is used to get an A=B output signal, where as AB¯ and A¯B> logics operations are used to realize A>B and Aoperations results along with the wide open eye diagrams are obtained. It is suggested that the proposed system would be promising in all-optical high speed networks and computing systems.

  20. Anaerobic digestion apparatus and process. Procede et installation de digestion anaerobie

    Energy Technology Data Exchange (ETDEWEB)

    De Baere, L.

    1989-05-09

    This invention concerns a process for the anaerobic digestion of apparently solid organic matter. The matter is mixed and kneaded with an inoculant to form an apparently solid mass having a water content which varies from around 55 wt % to around 75 wt %. This mass is then introduced into a digestor, where it is digested for a period of around less than 50 days. The biogas produced during the anaerobic digestion stage is recovered, said biogas being a byproduct of the digestion process. The digested mass is extracted, and at least a third, by weight, of that mass is recycled to act as the inoculant. The non-recycled digested mass is removed.

  1. Process and apparatus to distil petroleum. Verfahren und Vorrichtung zur Erdoel-Destillation

    Energy Technology Data Exchange (ETDEWEB)

    Buchenau, R.; Fauser, F.; Fischer, W.

    1982-12-23

    In a process to distil petroleum the raw petroleum is distilled in the first instance at atmospheric pressure to separate the low-boiling components and subsequently under vacuum to separate the remaining components. The vacuum distillation is carried out as a flash distillation using a shortway distiller.

  2. Textile Dry Cleaning Using Carbon Dioxide : Process, Apparatus and Mechanical Action

    NARCIS (Netherlands)

    Sutanto, S.

    2014-01-01

    Fabrics that are sensitive to water, may wrinkle or shrink when washed in regular washing machines and are usually cleaned by professional dry cleaners. Dry cleaning is a process of removing soils from substrate, in this case textile, using a non-aqueous solvent. The most common solvent in

  3. Method and an apparatus to control the lateral motion of a long metal bar being formed by a mechanical process such as rolling or drawing

    Science.gov (United States)

    Chang, Tzyy-Shuh; Huang, Hsun-Hau; Lin, Chang-Hung

    2007-10-02

    An adjustable guide, includes two or more mechanisms each having a rotatable retaining element containing a retaining groove with a variable radius in its perimeter surface. The grooves form a guidance path to control the lateral, i.e. non-axial, motion of a long bar moving along a longitudinal axis during a production process.The diameter of the guidance path varies according to the variable radii of the grooves. The guidance path increases in size at a predetermined rate, from a point of origin to an end point on the retaining groove. Rotating the retaining elements causes the diameter of the retaining grooves to change so that the size of the guidance path can be changed to match the diameter of the bar being rolled, size of the guidance path can be changed to fit the diameter of a new bar rolled without having to exchange the guide for a different sized guide, reduce fiction between the bar and the guide, a media, such as compressed air, can be injected between the retaining elements via orifices.Each retaining element is attached to a mounting apparatus. The mounting apparatus can be fixed or flexible. The flexible mounting apparatus includes one or more springs and one or more shock absorbers. A force neutral position of the flexible mounting apparatus is designed to be located on the predetermined ideal bar path line. The flexible mounting apparatus dissipates kinetic energy from the bar thereby reducing the bar's lateral motion relative to the ideal bar path line.The damping ratio of the mounting apparatus can be adjustable to alter the product's vibration mode to enable better control of the bar's lateral motion.

  4. Training apparatus

    International Nuclear Information System (INIS)

    Monteith, W.D.

    1983-01-01

    Training apparatus for use in contamination surveillance uses a mathematical model of a hypothetical contamination source (e.g. nuclear, bacteriological or chemical explosion or leak) to determine from input data defining the contamination source, the contamination level at any location within a defined exercise area. The contamination level to be displayed by the apparatus is corrected to real time from a real time clock or may be displayed in response to a time input from a keyboard. In a preferred embodiment the location is defined by entering UTM grid reference coordinates using the keyboard. The mathematical model used by a microprocessor of the apparatus for simulation of contamination levels in the event of a nuclear explosion is described. (author)

  5. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  6. Process and apparatus for recovering of oil, bitumen, tar, resins, etc

    Energy Technology Data Exchange (ETDEWEB)

    1921-11-06

    A process for recovering oil, bitumen, tar, and resins from oil shale, oil sands, Fuller's earth, peat, brown coal, mineral coal, and wood, through direct action of superheated steam on the material, is characterized by the fact that superheated steam with or without mixing of inert gases at a temperature, which lies below the decomposition temperature of the material being treated, is passed through the material with a high velocity. It leaves through nozzles, used in steam turbines. A method of carrying out the process in which solution medium is used for action on the material is characterized by the fact that solvents such as benzine and benzol are mixed with steam in different quantities.

  7. Improvements in or relating to a fluidizing process and apparatus for treating comminuted solid materials

    Energy Technology Data Exchange (ETDEWEB)

    1949-02-15

    A fluidizing process of treating comminuted solid materials cyclically with different gaseous materials in different treatment zones, which comprises fluidizing comminuted solid material in contiguous treatment zones with different gaseous materials, and establishing unequal fluid-static heads in said zones to effect cyclic flow of said solid material through said zones which are in communication adjacent their respective top and bottom portions and permit the overflow of said solid material from one of said zones to another.

  8. Boosting the ambipolar performance of solution-processable polymer semiconductors via hybrid side-chain engineering.

    Science.gov (United States)

    Lee, Junghoon; Han, A-Reum; Yu, Hojeong; Shin, Tae Joo; Yang, Changduk; Oh, Joon Hak

    2013-06-26

    Ambipolar polymer semiconductors are highly suited for use in flexible, printable, and large-area electronics as they exhibit both n-type (electron-transporting) and p-type (hole-transporting) operations within a single layer. This allows for cost-effective fabrication of complementary circuits with high noise immunity and operational stability. Currently, the performance of ambipolar polymer semiconductors lags behind that of their unipolar counterparts. Here, we report on the side-chain engineering of conjugated, alternating electron donor-acceptor (D-A) polymers using diketopyrrolopyrrole-selenophene copolymers with hybrid siloxane-solubilizing groups (PTDPPSe-Si) to enhance ambipolar performance. The alkyl spacer length of the hybrid side chains was systematically tuned to boost ambipolar performance. The optimized three-dimensional (3-D) charge transport of PTDPPSe-Si with pentyl spacers yielded unprecedentedly high hole and electron mobilities of 8.84 and 4.34 cm(2) V(-1) s(-1), respectively. These results provide guidelines for the molecular design of semiconducting polymers with hybrid side chains.

  9. Packaged semiconductor laser optical phase locked loop for photonic generation, processing and transmission of microwave signals

    DEFF Research Database (Denmark)

    Langley, L.N.; Elkin, M.D.; Edege, C.

    1999-01-01

    In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitter......, the lasers have a free-running summed linewidth of 6 MHz and the OPLL has a feedback bandwidth of 70 MHz, A state-of-the-art performance is obtained, with a total phase-error variance of 0.05 rad(2) (1-GHz bandwidth) and a carrier phase-error variance of 7x10(-4) rad(2) in a 15-MHz bandwidth. Carriers...... are generated in the range of 7-14 GHz. The OPLL transmitter has been fully packaged for practical use in field trials. This is the first time this type of transmitter has been fabricated in a packaged state which is a significant advance on the route to practical application....

  10. Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

    Science.gov (United States)

    Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

    2018-05-09

    Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

  11. Radioimmunoassay apparatus

    International Nuclear Information System (INIS)

    1981-01-01

    Apparatus for performing a quantitative radioimmunoassay comprising: a substantially spherical bead for carrying an antibody and a gripper for gripping said bead, said gripper comprising an integrally formed unit having a single elongate handle portion and a plurality of resilient fingers arranged at the base of the handle so that when said bead is secured within said fingers, said bead may be freely rotated about any diametric axis of the bead. In particular the invention relates to an apparatus for a two site immunoradiometric assay for serum ferritin in human blood samples. (author)

  12. Encephalographic apparatus

    International Nuclear Information System (INIS)

    1981-01-01

    An X-ray apparatus is described for determining the size and location of brain tumours by tomography during pneumoencephalography. The apparatus comprises an image recording device arranged opposite an X-ray source and a frame mounted on a tiltable patient table and rotatable with respect to the table. A patient support is arranged in the frame and is rotatable with respect to the frame. Air injected into the patients' spinal column travels up into the brain and displaces some of the cerebral fluid. Tomographic X-ray exposures are made of the air bubble which moves around in the brain cavities as the patient is rotated. (U.K.)

  13. TRANSFORMER APPARATUS

    Science.gov (United States)

    Wolfgang, F.; Nicol, J.

    1962-11-01

    Transformer apparatus is designed for measuring the amount of a paramagnetic substance dissolved or suspended in a diamagnetic liquid. The apparatus consists of a cluster of tubes, some of which are closed and have sealed within the diamagnetic substance without any of the paramagnetic material. The remaining tubes are open to flow of the mix- ture. Primary and secondary conductors are wrapped around the tubes in such a way as to cancel noise components and also to produce a differential signal on the secondaries based upon variations of the content of the paramagnetic material. (AEC)

  14. Radiotherapy apparatus

    International Nuclear Information System (INIS)

    Leung, P.M.; Webb, H.P.J.

    1985-01-01

    This invention relates to apparatus for applying intracavitary radiotherapy. In previously-known systems radioactive material is conveyed to a desired location within a patient by transporting a chain of balls pneumatically to and from an appropriately inserted applicator. According to this invention a ball chain for such a purpose comprises several radioactive balls separated by non-radioactive tracer balls of radiographically transparent material of lower density and surface hardness than the radioactive balls. The invention also extends to radiotherapy treatment apparatus comprising a storage, sorting and assembly system

  15. Radiography apparatus

    International Nuclear Information System (INIS)

    Sashin, D.; Sternglass, E.J.

    1982-01-01

    The apparatus of the present invention provides radiography apparatus wherein the use of a flat, generally rectangular beam or a fan-shaped beam of radiation in combination with a collimator, scintillator and device for optically coupling a self-scanning array of photodiodes to the scintillator means will permit production of images or image data with high contrast sensitivity and detail. It is contemplated that the self-scanning array of photodiodes may contain from about 60 to 2048, and preferably about 256 to 2048, individual photodiode elements per inch of object width, thereby permitting maximum data collection to produce a complete image or complete collection of image data

  16. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  17. PROCESS AND APPARATUS FOR SEPARATING INDIVIDUAL PANES FROM A LAMINATED GLASS SHEET

    OpenAIRE

    Kübler, R.; Rist, T.; Hoetger, B.

    2011-01-01

    The invention relates to a process for separating at least one individual pane of predefined size and edge form from a laminated glass sheet, which has at least two laminated glass sheet panes which are arranged one above another in adjacent form and between which there is arranged a plastic film, which permanently bonds the laminated glass sheet panes to one another, wherein - a laser track channel which at least weakens the plastic structure of the plastic film is laid into the plastic film...

  18. PROCESSES OF HEAT-MASS-TRANSFER IN APPARATUS OF SOLAR ABSORBING REFRIGERATION SYSTEMS

    Directory of Open Access Journals (Sweden)

    Doroshenko A.V.

    2014-12-01

    Full Text Available Ideology of development of the solar refrigeration systems and systems of air-conditioning, based on the use of absorbing cycle and solar energy for the regeneration of absorbent solution, is presented in the article. The processes of joint heat-mass-transfer are considered in the direct and indirect types of evaporated coolers taking into account the phenomenon of re-condensation of aquatic steams at the low temperature evaporated cooling of environments. The pre-liminary analysis of possibilities of the solar systems is executed as it applies in relation to the tasks of cooling of envi-ronments and air-conditioning systems.

  19. Discrete magic angle turning system, apparatus, and process for in situ magnetic resonance spectroscopy and imaging

    Science.gov (United States)

    Hu, Jian Zhi [Richland, WA; Sears, Jr., Jesse A.; Hoyt, David W [Richland, WA; Wind, Robert A [Kennewick, WA

    2009-05-19

    Described are a "Discrete Magic Angle Turning" (DMAT) system, devices, and processes that combine advantages of both magic angle turning (MAT) and magic angle hopping (MAH) suitable, e.g., for in situ magnetic resonance spectroscopy and/or imaging. In an exemplary system, device, and process, samples are rotated in a clockwise direction followed by an anticlockwise direction of exactly the same amount. Rotation proceeds through an angle that is typically greater than about 240 degrees but less than or equal to about 360 degrees at constant speed for a time applicable to the evolution dimension. Back and forth rotation can be synchronized and repeated with a special radio frequency (RF) pulse sequence to produce an isotropic-anisotropic shift 2D correlation spectrum. The design permits tubes to be inserted into the sample container without introducing plumbing interferences, further allowing control over such conditions as temperature, pressure, flow conditions, and feed compositions, thus permitting true in-situ investigations to be carried out.

  20. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  1. Process and apparatus for reacting laser radiation with a reactive medium

    International Nuclear Information System (INIS)

    Vanderleeden, J.C.

    1980-01-01

    The invention is based on the concept of irradiating the reaction medium with laser radiation in a reaction zone bounded by two longitudinally spaced reflecting surfaces, the beam of laser radiation being reflected back and forth between the surfaces which are contoured in such a way that the radiation flux density profile at substantially all transverse cross sections of the reaction zone is matched to the transverse distribution profile, that is the transverse distribution of the availability of a reactive species in the medium. A necessary condition for achieving this is that the beam be successively reflected between the surfaces along successive paths of progressively changing cross-sectional area intersected by respective, contiguous, non-overlapping areas of these surfaces. This process may be applied in particular to the selective laser-induced decomposition of HDCO to yield HD and CO

  2. Long core model apparatus for laboratory investigation of oil recovery processes

    Energy Technology Data Exchange (ETDEWEB)

    Milley, Gy; Bukta, B; Jonap, K; Lovei, J; Wagner, O

    1982-01-01

    In studying the secondary and Tertiary processes of intensifying oil output, an analysis was made of the following main factors: behavior of multiple-phase and multiple-component system in the porous medium, their stability, mobility, effect of viscosity and pressure differential in the system, configuration of the displacement front, influence of chemical additives on optimizing the surface energy, economic characteristics of the processes. All of these factors can be studied on a laboratory unit with core samples up to 120 cm long with temperatures to 120/sup 0/C, pressures to 30 MPa and consumption of reagents to 100 cm/sup 3//h. The unit contains feed vessels of high pressure for water, oil and gas in different reagents. There is a pumping unit of two-stage type, and in the first loop there is a piston pump which feeds the cylinder of the pump of the second stage of the plunger type. The outlet stage of this pump through the valve system is connected to the corresponding vessel for pressing the necessary reagent through the core sample. One can continually change the pressure to 100 MPa. The core is placed in a special core carrier and using special high temperature resins, it is packed in it in order to exclude side overflows. There is a technology of packing of comparatively soft rocks (clay). Sketches are presented of the sealing assemblies, and also the plans for inserting cables for the sensors. The sensor system is arranged over the entire length of the core and generates signals which are proportional to the magnitude of water saturation. The outlet of the core carrier has devices for resetting pressure, collecting filtrate, measurement of its composition and consumption. The core carrier is thermostatically controlled and contains two kW electrical heater for taking measurements at different temperatures. With a change in the system modes, the equilibrium is reached in 2-3 h.

  3. Prehensile apparatus

    Science.gov (United States)

    Smith, C.M.

    1993-10-12

    The present invention relates to an apparatus for handling a workpiece comprising a vessel that is longitudinally extensible and pressurizable, and a nonextensible and laterally flexible member on the vessel. The member constrains one side of the vessel to be nonextensible, causing the vessel to bend in the direction of the nonextensible member when pressurized. 8 figures.

  4. Detection of flow mixing processes using transmission methods in high-duty heat exchanging apparatus

    International Nuclear Information System (INIS)

    Seiffert, V.

    1981-01-01

    The COBRA-IIIC program modified by MIT has been further improved for verifying the experimental studies described in the thesis. This work has been accompanied by a review and modification of the relevant analytical equations. A mathematical relationship has been set up for the cross-mixing phenomenon of shearing flow in narrowest cross-section between two heating rods, the relationship being taken into account in the sub-channel analysis. Despite the very complex and superposing processes of the problem studied, the results obtained by the improved sub-channel analysis program using the nearly derived cross-mixing approach are quantitatively well confirmed by comparison with experimental data. Applying the improved sub-channel analysis program to describing the author's two-phase flow experiments (air-water and water-steam) with rod bundle geometries to be found in the literature, the cross-mixing approach presented in the thesis is shown to be reliable (orig./GL) [de

  5. High thermal stability solution-processable narrow-band gap molecular semiconductors.

    Science.gov (United States)

    Liu, Xiaofeng; Hsu, Ben B Y; Sun, Yanming; Mai, Cheng-Kang; Heeger, Alan J; Bazan, Guillermo C

    2014-11-19

    A series of narrow-band gap conjugated molecules with specific fluorine substitution patterns has been synthesized in order to study the effect of fluorination on bulk thermal stability. As the number of fluorine substituents on the backbone increase, one finds more thermally robust bulk structures both under inert and ambient conditions as well as an increase in phase transition temperatures in the solid state. When integrated into field-effect transistor devices, the molecule with the highest degree of fluorination shows a hole mobility of 0.15 cm(2)/V·s and a device thermal stability of >300 °C. Generally, the enhancement in thermal robustness of bulk organization and device performance correlates with the level of C-H for C-F substitution. These findings are relevant for the design of molecular semiconductors that can be introduced into optoelectronic devices to be operated under a wide range of conditions.

  6. Increasing Mn substitution in magnetic semiconductors through controlled ambient annealing processes

    Energy Technology Data Exchange (ETDEWEB)

    Hollingsworth, J. [Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093-0411 (United States); Bandaru, P.R. [Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093-0411 (United States)], E-mail: pbandaru@ucsd.edu

    2008-06-25

    We report on a controlled ambient annealing technique aimed at increasing the amount of Mn incorporation in III-V semiconductors. The aim is to reduce the number of hole carrier and magnetic element compensating entities, such as Mn interstitials and anti-site defects, to increase the magnetic Curie temperature. The idea is (a) to increase the number of Group III vacancies through annealing in Group V vapor rich conditions and (b) judicious use of crystal field theory to reduce/stabilize Mn interstitials. Our experimental results constitute the highest reportedT{sub c} ({approx}130 K) in Mn doped InSb and Mn doped InP. The possibility of ferrimagnetism in Mn and Cr incorporated GaAs, was noted.

  7. Attachment to a mass spectrometer for studying the processes of semiconductor compound deposition from a gaseous phase

    International Nuclear Information System (INIS)

    Belousov, V.I.; Zhuravlev, G.I.; Popenko, N.I.; Novozhilov, A.F.; Matveev, I.V.; Murav'ev, V.V.

    1984-01-01

    An attachment to the mass spectrometer for studying the processes of semiconductor compounds deposition from a gaseous phase at the pressure of 1x10 5 Pa and the temperature of 400-1300 K is described. The attachment consists of the Neer ion source with ionization section cooled upto the temperature of liquid nitrogen, a two-zone vacuum furnace, and a quartz epitaxy reactor of the horzontal type.The attachment is equipped with the systems of process gas distribution in 5 flows and temperature stabilization. The rate of mass spectrum recording constitutes 2 mass/s at the resolution being equal to 1000 at the 10% level. The sensitivity at the steam-gas mixture components partial pressure determination constitutes 1x10 -4 Pa

  8. Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

    Science.gov (United States)

    Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei

    2018-01-01

    In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG 3 ) is reported. The WG 3 NSs are prepared from phase separation by spin-coating blend solutions of WG 3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG 3 film, the device based on WG 3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG 3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG 3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG 3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  10. Uranium dioxide calcining apparatus

    International Nuclear Information System (INIS)

    Cole, E.A.; Peterson, R.S.

    1978-01-01

    This invention relates to an improved continuous calcining apparatus for consistently and controllably producing from calcinable reactive solid compounds of uranium, such as ammonium diuranate, uranium dioxide (UO 2 ) having an oxygen to uranium ratio of less than 2.2. The apparatus comprises means at the outlet end of a calciner kiln for receiving hot UO 2 , means for cooling the UO 2 to a temperature of below 100 deg C and conveying the cooled UO 2 to storage or to subsequent UO 2 processing apparatus where it finally comes into contact with air, the means for receiving cooling and conveying being sealed to the outlet end of the calciner and being maintained full of UO 2 and so operable as to exclude atmospheric oxygen from coming into contact with any UO 2 which is at elevated temperatures where it would readily oxidize, without the use of extra hydrogen gas in said means. (author)

  11. Tomographic scanning apparatus

    International Nuclear Information System (INIS)

    1981-01-01

    Details are given of a tomographic scanning apparatus, with particular reference to the means of adjusting the apparent gain of the signal processing means for receiving output signals from the detectors, to compensate for drift in the gain characteristics, including means for passing a reference signal. (U.K.)

  12. EXTRACTION APPARATUS

    Science.gov (United States)

    Ballard, A.E.; Brigham, H.R.

    1958-10-28

    An apparatus whereby relatlvely volatile solvents may be contacted with volatile or non-volatile material without certaln attendant hazards is described. A suitable apparatus for handling relatively volatlle liqulds may be constructed comprising a tank, and a closure covering the tank and adapted to be securely attached to an external suppont. The closure is provided with a rigidly mounted motor-driven agitator. This agitator is connected from the driving motor lnto the lnterlor of the tank through a gland adapted to be cooled witb inert gas thereby eliminating possible hazard due to frictional heat. The closure is arranged so that the tank may be removed from it without materially dlsturbing the closure which, as described, carrles the motor driven agitator and other parts.

  13. Fabrication of highly nonlinear germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots using atomization doping process and its optical nonlinearity.

    Science.gov (United States)

    Ju, Seongmin; Watekar, Pramod R; Han, Won-Taek

    2011-01-31

    Germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots (SQDs) in the core was fabricated by using the atomization process in modified chemical vapor deposition (MCVD) process. The absorption bands attributed to PbTe semiconductor quantum dots in the fiber core were found to appear at around 687 nm and 1055 nm. The nonlinear refractive index measured by the long-period fiber grating (LPG) pair method upon pumping with laser diode at 976.4 nm was estimated to be ~1.5 × 10(-16) m2/W.

  14. Centrifuge apparatus

    Science.gov (United States)

    Sartory, Walter K.; Eveleigh, John W.

    1976-01-01

    A method and apparatus for operating a continuous flow blood separation centrifuge are provided. The hematocrit of the entrant whole blood is continuously maintained at an optimum constant value by the addition of plasma to the entrant blood. The hematocrit of the separated red cells is monitored to indicate the degree of separation taking place, thereby providing a basis for regulating the flow through the centrifuge.

  15. CASTING APPARATUS

    Science.gov (United States)

    Gray, C.F.; Thompson, R.H.

    1958-09-23

    An apparatus is described for casting small quantities of uranlum. It consists of a crucible having a hole in the bottom with a mold positioned below. A vertical rcd passes through the hole in the crucible and has at its upper end a piercing head adapted to break the oxide skin encasing a molten uranium body. An air tight cylinder surrounds the crucible and mold, and is arranged to be evacuated.

  16. Molecular Engineering of Non-Halogenated Solution-Processable Bithiazole based Electron Transport Polymeric Semiconductors

    KAUST Repository

    Fu, Boyi; Wang, Cheng-Yin; Rose, Bradley Daniel; Jiang, Yundi; Chang, Mincheol; Chu, Ping-Hsun; Yuan, Zhibo; Fuentes-Hernandez, Canek; Bernard, Kippelen; Bredas, Jean-Luc; Collard, David M.; Reichmanis, Elsa

    2015-01-01

    The electron deficiency and trans planar conformation of bithiazole is potentially beneficial for the electron transport performance of organic semiconductors. However, the incorporation of bithiazole into polymers through a facile synthetic strategy remains a challenge. Herein, 2,2’-bithiazole was synthesized in one step and copolymerized with dithienyldiketopyrrolopyrrole to afford poly(dithienyldiketopyrrolopyrrole-bithiazole), PDBTz. PDBTz exhibited electron mobility reaching 0.3 cm2V-1s-1 in organic field-effect transistor (OFET) configuration; this contrasts with a recently discussed isoelectronic conjugated polymer comprising an electron rich bithiophene and dithienyldiketopyrrolopyrrole, which displays merely hole transport characteristics. This inversion of charge carrier transport characteristics confirms the significant potential for bithiazole in the development of electron transport semiconducting materials. Branched 5-decylheptacyl side chains were incorporated into PDBTz to enhance polymer solubility, particularly in non-halogenated, more environmentally compatible solvents. PDBTz cast from a range of non-halogenated solvents exhibited film morphologies and field-effect electron mobility similar to those cast from halogenated solvents.

  17. Molecular Engineering of Non-Halogenated Solution-Processable Bithiazole based Electron Transport Polymeric Semiconductors

    KAUST Repository

    Fu, Boyi

    2015-04-01

    The electron deficiency and trans planar conformation of bithiazole is potentially beneficial for the electron transport performance of organic semiconductors. However, the incorporation of bithiazole into polymers through a facile synthetic strategy remains a challenge. Herein, 2,2’-bithiazole was synthesized in one step and copolymerized with dithienyldiketopyrrolopyrrole to afford poly(dithienyldiketopyrrolopyrrole-bithiazole), PDBTz. PDBTz exhibited electron mobility reaching 0.3 cm2V-1s-1 in organic field-effect transistor (OFET) configuration; this contrasts with a recently discussed isoelectronic conjugated polymer comprising an electron rich bithiophene and dithienyldiketopyrrolopyrrole, which displays merely hole transport characteristics. This inversion of charge carrier transport characteristics confirms the significant potential for bithiazole in the development of electron transport semiconducting materials. Branched 5-decylheptacyl side chains were incorporated into PDBTz to enhance polymer solubility, particularly in non-halogenated, more environmentally compatible solvents. PDBTz cast from a range of non-halogenated solvents exhibited film morphologies and field-effect electron mobility similar to those cast from halogenated solvents.

  18. Solution processing of polymer semiconductor: Insulator blends-Tailored optical properties through liquid-liquid phase separation control

    KAUST Repository

    Hellmann, Christoph

    2014-12-17

    © 2014 Wiley Periodicals, Inc. It has been demonstrated that the 0-0 absorption transition of poly(3-hexylthiophene) (P3HT) in blends with poly(ethylene oxide) (PEO) could be rationally tuned through the control of the liquid-liquid phase separation process during solution deposition. Pronounced J-like aggregation behavior, characteristic for systems of a low exciton band width, was found for blends where the most pronounced liquid-liquid phase separation occurred in solution, leading to domains of P3HT and PEO of high phase purity. Since liquid-liquid phase separation could be readily manipulated either by the solution temperature, solute concentration, or deposition temperature, to name a few parameters, our findings promise the design from the out-set of semiconductor:insulator architectures of pre-defined properties by manipulation of the interaction parameter between the solutes as well as the respective solute:solvent system using classical polymer science principles.

  19. Solution processing of polymer semiconductor: Insulator blends-Tailored optical properties through liquid-liquid phase separation control

    KAUST Repository

    Hellmann, Christoph; Treat, Neil D.; Scaccabarozzi, Alberto D.; Razzell Hollis, Joseph; Fleischli, Franziska D.; Bannock, James H.; de Mello, John; Michels, Jasper J.; Kim, Ji-Seon; Stingelin, Natalie

    2014-01-01

    © 2014 Wiley Periodicals, Inc. It has been demonstrated that the 0-0 absorption transition of poly(3-hexylthiophene) (P3HT) in blends with poly(ethylene oxide) (PEO) could be rationally tuned through the control of the liquid-liquid phase separation process during solution deposition. Pronounced J-like aggregation behavior, characteristic for systems of a low exciton band width, was found for blends where the most pronounced liquid-liquid phase separation occurred in solution, leading to domains of P3HT and PEO of high phase purity. Since liquid-liquid phase separation could be readily manipulated either by the solution temperature, solute concentration, or deposition temperature, to name a few parameters, our findings promise the design from the out-set of semiconductor:insulator architectures of pre-defined properties by manipulation of the interaction parameter between the solutes as well as the respective solute:solvent system using classical polymer science principles.

  20. Nature of radiative recombination processes in layered semiconductor PbCdI{sub 2} nanostructural scintillation material

    Energy Technology Data Exchange (ETDEWEB)

    Bukivskii, A.P. [Institute of Physics of the National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Gnatenko, Yu.P., E-mail: yuriygnatenko@ukr.net [Institute of Physics of the National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Piryatinskii, Yu.P. [Institute of Physics of the National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Gamernyk, R.V. [Lviv National University, 8 Kyryl o and Mefodiy Str., 29005 Lviv (Ukraine)

    2017-05-15

    We report on the efficient photoluminescence (PL) and radioluminescence (RL) of the PbI{sub 2} nanoclusters (NCLs), which are naturally formed in the nanostructured Pb{sub 1-X}Cd{sub x}I{sub 2} alloys (X=0.70). Here, we carried out the studies of the nature of radiative recombination processes in the NCLs of various sizes by measuring PL temperature evolution. Our results indicate that at low temperatures the PL is mainly caused by exciton emission and recombination of donor-acceptor pairs, generated in volume of large NCLs. The broad bands, which are associated with the deep intrinsic surface states, including self-trapped excitons (STEs), are dominant in the PL spectra at higher temperature (>100 K). Our work shows that the nature of emission, associated with RL bands is analogous to that for PL bands. It was shown that the investigated nanostructured material is strongly radiation-resistant. Thus, the Pb{sub 1-X}Cd{sub X}I{sub 2} alloys can be considered as new effective layered semiconductor nanostructured materials which can be suitable for the elaboration of perspective semiconductor scintillators. These nanomaterials have promising prospects for applications in new generations of devices for biomedical diagnostics and industrial imaging applications. - Highlights: •The intense PL and RL of nanostructural PbCdI{sub 2} alloys were observed. •The nature of recombination processes of the nanoscintillators was established. •The low temperature PL is caused by exciton and donor-acceptor pairs recombination. •The broad PL bands are due to the deep intrinsic states formed on the NCLs surface. •The PL associated with STEs for NCLs of different sizes was analyzed in detail. •It was shown that the nature of PL and RL spectra is same.

  1. SEM evaluation of metallization on semiconductors. [Scanning Electron Microscope

    Science.gov (United States)

    Fresh, D. L.; Adolphsen, J. W.

    1974-01-01

    A test method for the evaluation of metallization on semiconductors is presented and discussed. The method has been prepared in MIL-STD format for submittal as a proposed addition to MIL-STD-883. It is applicable to discrete devices and to integrated circuits and specifically addresses batch-process oriented defects. Quantitative accept/reject criteria are given for contact windows, other oxide steps, and general interconnecting metallization. Figures are provided that illustrate typical types of defects. Apparatus specifications, sampling plans, and specimen preparation and examination requirements are described. Procedures for glassivated devices and for multi-metal interconnection systems are included.

  2. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  3. Radiography apparatus

    International Nuclear Information System (INIS)

    Vasseur, J.P.

    1976-01-01

    A novel apparatus for radiographic examination purposes comprising an x-ray source emitting a flat beam is described. Detectors are arranged in the plane of the beam in order each to pick up part of the beam. To avoid the Compton effect, each detector has associated with it an auxiliary detector which only receives the rays emitted by the Compton effect. An electrical circuit forms a predetermined linear combination of the signals respectively picked up by each detector and the associated auxiliary detector, this in order to prevent the errors which are due to the Compton effect when the beam passes through the body being analyzed

  4. Quantum dynamical simulation of photoinduced electron transfer processes in dye-semiconductor systems: theory and application to coumarin 343 at TiO₂.

    Science.gov (United States)

    Li, Jingrui; Kondov, Ivan; Wang, Haobin; Thoss, Michael

    2015-04-10

    A recently developed methodology to simulate photoinduced electron transfer processes at dye-semiconductor interfaces is outlined. The methodology employs a first-principles-based model Hamiltonian and accurate quantum dynamics simulations using the multilayer multiconfiguration time-dependent Hartree approach. This method is applied to study electron injection in the dye-semiconductor system coumarin 343-TiO2. Specifically, the influence of electronic-vibrational coupling is analyzed. Extending previous work, we consider the influence of Dushinsky rotation of the normal modes as well as anharmonicities of the potential energy surfaces on the electron transfer dynamics.

  5. ENVIRONMENTAL TECHNOLOGY INITIATIVE: CHEMICAL-FREE CLEANING OF SEMICONDUCTORS BY THE RADIANCE PROCESS

    Science.gov (United States)

    The Radiance Process is a patented dry process for removing contaminants from surfaces. It uses light, usually from a pulsed laser and a gas inert to the surface, to entrain released contaminants. The focus of this effort is to assess the applicability of the Radiance Process t...

  6. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  7. Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

    Science.gov (United States)

    Sheng, Jiazhen; Han, Ki-Lim; Hong, TaeHyun; Choi, Wan-Ho; Park, Jin-Seong

    2018-01-01

    The current article is a review of recent progress and major trends in the field of flexible oxide thin film transistors (TFTs), fabricating with atomic layer deposition (ALD) processes. The ALD process offers accurate controlling of film thickness and composition as well as ability of achieving excellent uniformity over large areas at relatively low temperatures. First, an introduction is provided on what is the definition of ALD, the difference among other vacuum deposition techniques, and the brief key factors of ALD on flexible devices. Second, considering functional layers in flexible oxide TFT, the ALD process on polymer substrates may improve device performances such as mobility and stability, adopting as buffer layers over the polymer substrate, gate insulators, and active layers. Third, this review consists of the evaluation methods of flexible oxide TFTs under various mechanical stress conditions. The bending radius and repetition cycles are mostly considering for conventional flexible devices. It summarizes how the device has been degraded/changed under various stress types (directions). The last part of this review suggests a potential of each ALD film, including the releasing stress, the optimization of TFT structure, and the enhancement of device performance. Thus, the functional ALD layers in flexible oxide TFTs offer great possibilities regarding anti-mechanical stress films, along with flexible display and information storage application fields. Project supported by the National Research Foundation of Korea (NRF) (No. NRF-2017R1D1A1B03034035), the Ministry of Trade, Industry & Energy (No. #10051403), and the Korea Semiconductor Research Consortium.

  8. Fiscal 1998 research achievement report. Development of key technology for high-efficiency semiconductor manufacturing process; 1998 nendo kokoritsu handotai seizo process kiban gijutsu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-05-01

    In the development of large-aperture/high-density plasma technology, research and development was carried out for balanced electron drift plasma technologies for uniform control of plasma density and the like, such as an excited plasma source and plasma drift to enable wide-range plasma generation in a chamber. In the development of high-efficiency exposure technology, studies were made for stable generation and control of short wavelength excimer laser and for higher-speed large-aperture mask writing by use of an electron beam. In the development of higher-speed processing and energy-efficient technologies, research and development was conducted involving probe card technology for increasing the speed of semiconductor inspection, software-aided virtual tester technology, local energy-efficient cleaning technology in wafer processing and transportation, sheet-type flexible manufacturing system, and the like. (NEDO)

  9. Method of start-up operation of a liquefaction and distillation apparatus for processing waste gases containing radioactive rare gases

    International Nuclear Information System (INIS)

    Ota, Masakazu; Tani, Akira; Hashimoto, Hiroshi; An, Bunzai; Kanazawa, Toshio.

    1975-01-01

    Object: To enable reduction of cooling time, simplification of maintenance, and release of cooling gas outside system. Structure: In starting of the liquefaction and distillation apparatus, liquid nitrogen is introduced into the tower bottom of a rectification tower from a liquid nitrogen tank through a liquid nitrogen supply line to vaporize the liquid nitrogen with help of heat entered from outside and a heater. The vaporized nitrogen gas moves up while cooling the interior of the rectification tower and is guided by a vacuum pump from the top of tower toward the purifying gas line and low temperature heat exchanger and disharging into atmosphere. When the interior of the apparatus is sufficiently cooled in a manner as described above, the liquid nitrogen supply line is closed, the liquid nitrogen is fed to a condenser, and the waste gases containing the radioactive rare gases from the raw exhaust supply line are introduced into the rectification tower for entry of normal operation. (Kamimura, M.)

  10. THE CONTROL ALGORITHM OF THE DRYING PROCESS PARTICULATE MATERIALS IN THE APPARATUS WITH THE SWIRLING FLOW OF COOLANT AND MICROWAVE ENERGY SUPPLY

    Directory of Open Access Journals (Sweden)

    S. T. Antipov

    2015-01-01

    Full Text Available The technical task of the process is to improve the drying quality of the final product, increasing the precision and reliability of control, the reduction of specific energy consumption. One of the ways to improve the process is complex and i ts local automation. This paper deals with the problems of development and creation of a new control algorithm drying process of the particulate material. Identified a number of shortcomings of the existing methods of automatic control of the process. As a result, the authors proposed a method for drying particulate materials in the device with swirling flow and the microwave energy supply and its automatic control algorithm. The description of the operating principle of the drying apparatus consists in that the particulate material is wet by using a tangential flow of coolant supplied to the cylinder-drying apparatus which also serves the axial coolant flow, whereby the heat transfer fluid with the particulate material begins to undergo a complex circular movement along the circumference apparatus, thereby increasing its speed and its operation control algorithm. The work of this scheme is carried out at three levels of regulation on the basis of determining the coefficient of efficiency of the dryer, which makes it possible to determine the optimal value of the power equipment and to forecast the cost of electricity. All of the above allows you to get ready for a high quality product while minimizing thermal energy and material costs by optimizing the operating parameters of the drying of the particulate material in the dryer with a combined microwave energy supply and ensure the rational use of heat energy by varying their quantity depending on the characteristics to be dried particulate material and the course of the process.

  11. K-mean clustering algorithm for processing signals from compound semiconductor detectors

    International Nuclear Information System (INIS)

    Tada, Tsutomu; Hitomi, Keitaro; Wu, Yan; Kim, Seong-Yun; Yamazaki, Hiromichi; Ishii, Keizo

    2011-01-01

    The K-mean clustering algorithm was employed for processing signal waveforms from TlBr detectors. The signal waveforms were classified based on its shape reflecting the charge collection process in the detector. The classified signal waveforms were processed individually to suppress the pulse height variation of signals due to the charge collection loss. The obtained energy resolution of a 137 Cs spectrum measured with a 0.5 mm thick TlBr detector was 1.3% FWHM by employing 500 clusters.

  12. A Novel Method for Control Performance Assessment with Fractional Order Signal Processing and Its Application to Semiconductor Manufacturing

    Directory of Open Access Journals (Sweden)

    Kai Liu

    2018-06-01

    Full Text Available The significant task for control performance assessment (CPA is to review and evaluate the performance of the control system. The control system in the semiconductor industry exhibits a complex dynamic behavior, which is hard to analyze. This paper investigates the interesting crossover properties of Hurst exponent estimations and proposes a novel method for feature extraction of the nonlinear multi-input multi-output (MIMO systems. At first, coupled data from real industry are analyzed by multifractal detrended fluctuation analysis (MFDFA and the resultant multifractal spectrum is obtained. Secondly, the crossover points with spline fit in the scale-law curve are located and then employed to segment the entire scale-law curve into several different scaling regions, in which a single Hurst exponent can be estimated. Thirdly, to further ascertain the origin of the multifractality of control signals, the generalized Hurst exponents of the original series are compared with shuffled data. At last, non-Gaussian statistical properties, multifractal properties and Hurst exponents of the process control variables are derived and compared with different sets of tuning parameters. The results have shown that CPA of the MIMO system can be better employed with the help of fractional order signal processing (FOSP.

  13. CMOS Compatibility of a Micromachining Process Developed for Semiconductor Neural Probe

    National Research Council Canada - National Science Library

    An, S

    2001-01-01

    .... Test transistor patterns generated using standard CMOS fabrication line were exposed to a post-CMOS probe making process including dielectric deposition, gold metalization and the dry etching step...

  14. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    , which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin

  15. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  16. Thermoforming apparatus

    International Nuclear Information System (INIS)

    Wallsten, H.I.

    1984-01-01

    Apparatus for manufacturing articles is disclosed in which a preheated sheet of thermoplastic material is intermittently fed to present successive preheated portions of the sheet in a work station having a forming tool for forming articles in each successive sheet portion and a stamping tool for co-operating with the forming tool to stamp the formed articles from the sheet. The forming tool has a plurality of forming dies which are movable successively and cyclically into the work station for forming articles in respective successive sheet portions. After each forming operation the stamping tool is brought into engagement with a resilient counter-surface on the forming die to stamp from the sheet the articles formed by that die

  17. Radiographic apparatus

    International Nuclear Information System (INIS)

    Dalton, B.L.

    1984-01-01

    This patent application describes a radiographic apparatus including an array of radiation sensors, a source of radiation for projecting a beam through a body and means for moving one of said source and array relative to the body and for producing an electrical signal representative of the movement of the other of said source and array needed to bring the array into register with the beam. Drive means are arranged to move the other of said source and array in response to the electrical signal. In one embodiment, the source is rotated by an amount measured by a grating and associated electronics. The required movement of the array to maintain registration is calculated and transmitted to a driver. Alternatively, a laser may be mounted with the same and the array driven so that the laser beam continuously impinges on a photocell mounted with the array. (author)

  18. Evaluation of the efficiency of the processes of purification of antimony to semiconductor grade purity

    International Nuclear Information System (INIS)

    Walis, L.; Rowinska, L.; Panczyk, E.

    1992-01-01

    A complex of techniques for purification of antimony from arsenic has been examined with the aid of radiotracer 76 As. The investigated processes comprised vacuum distillation, zone melting and remelting of the metal under artificial slags. The purification efficiencies for the above processes were high and amounted to 94% (for 30% of the charge), 50% (for 50% of the charge) and 99.5% (for 60% of the charge), respectively. Attempts were made to determine the kinetics of the separation of arsenic from antimony by distillation. The application of the radioactive tracer made it possible to determine rapidly the distribution of impurities after each stage of the process within a wide concentration range (10 -2 -10 -7 g/g). (author). 7 refs, 4 figs, 6 tabs

  19. Advanced lithographic filtration and contamination control for 14nm node and beyond semiconductor processes

    Science.gov (United States)

    Varanasi, Rao; Mesawich, Michael; Connor, Patrick; Johnson, Lawrence

    2017-03-01

    Two versions of a specific 2nm rated filter containing filtration medium and all other components produced from high density polyethylene (HDPE), one subjected to standard cleaning, the other to specialized ultra-cleaning, were evaluated in terms of their cleanliness characteristics, and also defectivity of wafers processed with photoresist filtered through each. With respect to inherent cleanliness, the ultraclean version exhibited a 70% reduction in total metal extractables and 90% reduction in organics extractables compared to the standard clean version. In terms of particulate cleanliness, the ultraclean version achieved stability of effluent particles 30nm and larger in about half the time required by the standard clean version, also exhibiting effluent levels at stability almost 90% lower. In evaluating defectivity of blanket wafers processed with photoresist filtered through either version, initial defect density while using the ultraclean version was about half that observed when the standard clean version was in service, with defectivity also falling more rapidly during subsequent usage of the ultraclean version compared to the standard clean version. Similar behavior was observed for patterned wafers, where the enhanced defect reduction was primarily of bridging defects. The filter evaluation and actual process-oriented results demonstrate the extreme value in using filtration designed possessing the optimal intrinsic characteristics, but with further improvements possible through enhanced cleaning processes

  20. Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode

    DEFF Research Database (Denmark)

    Klinkhammer, Sönke; Liu, Xin; Huska, Klaus

    2012-01-01

    The fabrication and characterization of continuously tunable, solution-processed distributed feedback (DFB) lasers in the visible regime is reported. Continuous thin film thickness gradients were achieved by means of horizontal dipping of several conjugated polymer and blended small molecule solu...

  1. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.; Lin, Yenhung; Zhao, Kui; Li, Ruipeng; Thomas, Stuart R.; Semple, James; Androulidaki, Maria; Sygellou, Lamprini; McLachlan, Martyn A.; Stratakis, Emmanuel; Amassian, Aram; Anthopoulos, Thomas D.

    2015-01-01

    reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization

  2. Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

    Science.gov (United States)

    Martin-Bragado, I.; Castrillo, P.; Jaraiz, M.; Pinacho, R.; Rubio, J. E.; Barbolla, J.; Moroz, V.

    2005-09-01

    Atomistic process simulation is expected to play an important role for the development of next generations of integrated circuits. This work describes an approach for modeling electric charge effects in a three-dimensional atomistic kinetic Monte Carlo process simulator. The proposed model has been applied to the diffusion of electrically active boron and arsenic atoms in silicon. Several key aspects of the underlying physical mechanisms are discussed: (i) the use of the local Debye length to smooth out the atomistic point-charge distribution, (ii) algorithms to correctly update the charge state in a physically accurate and computationally efficient way, and (iii) an efficient implementation of the drift of charged particles in an electric field. High-concentration effects such as band-gap narrowing and degenerate statistics are also taken into account. The efficiency, accuracy, and relevance of the model are discussed.

  3. Analysis of technology and development plan on Lithography process of display industry and semiconductor

    International Nuclear Information System (INIS)

    2005-02-01

    This reports the seminar on Lithography in 2005, which includes these contents; Introduction of Lithography, equipment in NNFC, Exposure technology with fabrication, basic and application optics, RET and Lens aberrations, Alignment and Overlay and Metrology, Resist process with prime, mechanism, issues, resist technology and track system, Mask and OPC such as mask, fabrication, mask technology, proximity effect and OPC, Next generation, Lithography with NGL, Immersion and imprint. In the last, there are questions and answers.

  4. Light Emitting, Photovoltaic or Other Electronic Apparatus and System

    Science.gov (United States)

    Ray, William Johnstone (Inventor); Lowenthal, Mark D. (Inventor); Shotton, Neil O. (Inventor); Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

    2018-01-01

    The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

  5. Process allowing the spectral compensation of semi-conductor nuclear detector

    International Nuclear Information System (INIS)

    L'Hote, J.P.

    1987-01-01

    The process includes a discriminator whose threshold level is applied to the detector during a fixed time and is externally controlled by a pre-programmed system; the different threshold levels and their application time to the detector are fixed by the nature of the used detector and by the tolerance allowed on the spectral response. The measurements made for each threshold level are corrected by a coefficient depending on the nature of the used detector and the tolerance on the spectral response [fr

  6. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  7. The rates of charge separation and energy destructive charge recombination processes within an organic dyad in presence of metal-semiconductor core shell nanocomposites.

    Science.gov (United States)

    Mandal, Gopa; Bhattacharya, Sudeshna; Das, Subrata; Ganguly, Tapan

    2012-01-01

    Steady state and time resolved spectroscopic measurements were made at the ambient temperature on an organic dyad, 1-(4-Chloro-phenyl)-3-(4-methoxy-naphthalen-1-yl)-propenone (MNCA), where the donor 1-methoxynaphthalene (1 MNT) is connected with the acceptor p-chloroacetophenone (PCA) by an unsaturated olefinic bond, in presence of Ag@TiO2 nanoparticles. Time resolved fluorescence and absorption measurements reveal that the rate parameters associated with charge separation, k(CS), within the dyad increases whereas charge recombination rate k(CR) reduces significantly when the surrounding medium is changed from only chloroform to mixture of chloroform and Ag@TiO2 (noble metal-semiconductor) nanocomposites. The observed results indicate that the dyad being combined with core-shell nanocomposites may form organic-inorganic nanocomposite system useful for developing light energy conversion devices. Use of metal-semiconductor nanoparticles may provide thus new ways to modulate charge recombination processes in light energy conversion devices. From comparison with the results obtained in our earlier investigations with only TiO2 nanoparticles, it is inferred that much improved version of light energy conversion device, where charge-separated species could be protected for longer period of time of the order of millisecond, could be designed by using metal-semiconductor core-shell nanocomposites rather than semiconductor nanoparticles only.

  8. Intrinsic electronic defects and multiple-atom processes in the oxidic semiconductor Ga2O3

    Science.gov (United States)

    Schmeißer, Dieter; Henkel, Karsten

    2018-04-01

    We report on the electronic structure of gallium oxide (Ga2O3) single crystals as studied by resonant photoelectron spectroscopy (resPES). We identify intrinsic electronic defects that are formed by mixed-atomic valence states. We differentiate three coexisting defect states that differ in their electronic correlation energy and their spatial localization lengths. Their relative abundance is described by a fractional ionicity with covalent and ionic bonding contributions. For Ga2O3, our analyses of the resPES data enable us to derive two main aspects: first, experimental access is given to determine the ionicity based on the original concepts of Pauling and Phillips. Second, we report on multi-atomic energy loss processes in the Ga2p core level and X-ray absorption data. The two experimental findings can be explained consistently in the same context of mixed-atomic valence states and intrinsic electronic defects.

  9. Purification apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Mortenson, C.W.

    1982-04-27

    An apparatus is provided for converting sea or other undrinkable waters to drinkable water without the use of driven or moving parts. Reliance upon gradient effects is made to effect the vaporization of, for example, sea water, followed by the condensation of the vapor to form distilled water. Gradient effects are achieved through the provision of differentials in the thermal conductivity, capillary activity, adsorptive, absorptive and/or pressure characteristics of particulate materials, or combinations of such physicals. For example, a column is packed with material graded as to its conductivity, the least thermally conductive material being nearest the cold or ambient water that is to be purified. In packing the column each successive layer of material has a greater thermal conductivity than the layer beneath it with the most conductive being at the top near the outlet arm of the column. The final outlet arm or tube is unheated or is at a temperature lower than that of the topmost conductive material so that vapor reaching the outlet tube gets condensed. This tube leads to a container kept in a cool place as, for example, buried in the ground, as, for instance, at the seashore deep enough to be cooled or to be surrounded by water, thus keeping the condensate cold. Pure water so collected is removed by such means as is desired. Other impure, volatile liquids may be similarly purified.

  10. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  11. Self-consistent simulation study on magnetized inductively coupled plasma for 450 mm semiconductor wafer processing

    International Nuclear Information System (INIS)

    Lee, Ho-Jun; Kim, Yun-Gi

    2012-01-01

    The characteristics of weakly magnetized inductively coupled plasma (MICP) are investigated using a self-consistent simulation based on the drift–diffusion approximation with anisotropic transport coefficients. MICP is a plasma source utilizing the cavity mode of the low-frequency branch of the right-hand circularly polarized wave. The model system is 700 mm in diameter and has a 250 mm gap between the radio-frequency window and wafer holder. The model chamber size is chosen to verify the applicability of this type of plasma source to the 450 mm wafer process. The effects of electron density distribution and external axial magnetic field on the propagation properties of the plasma wave, including the wavelength modulation and refraction toward the high-density region, are demonstrated. The restricted electron transport and thermal conductivity in the radial direction due to the magnetic field result in small temperature gradient along the field lines and off-axis peak density profile. The calculated impedance seen from the antenna terminal shows that MICP has a resistance component that is two to threefold higher than that of ICP. This property is practically important for large-size, low-pressure plasma sources because high resistance corresponds to high power-transfer efficiency and stable impedance matching characteristics. For the 0.665 Pa argon plasma, MICP shows a radial density uniformity of 6% within 450 mm diameter, which is much better than that of nonmagnetized ICP.

  12. Prediction of total dose effects on sub-micron process metal oxide semiconductor devices

    International Nuclear Information System (INIS)

    Kamimura, Hiroshi; Kato, Masataka.

    1991-01-01

    A method for correcting leakage currents is described to predict the radiation-induced threshold voltage shift of sub-micron MOSFETs. A practical model for predicting the leakage current generated by irradiation is also given on the basis of experimental results on 0.8-μm process MOSFETs. The constants in the threshold voltage shift model are determined from the 'true' I-V characteristic of the MOSFET, which is obtained by correction of leakage currents due to characteristic change of a parasitic transistor. In this way, the threshold voltage shift of the n-channel MOSFET irradiated at a low dose rate of 2 Gy(Si)/h was also calculated by using data from a high dose rate irradiation experiment (100 Gy(Si)/h, 5 h). The calculated result well represented the tendency of measured data on threshold voltage shift. The radiation-induced leakage current was considered to decay approximately in two exponential modes. The constants in this leakage current model were determined from the above high dose rate experiment. The response of leakage current predicted at a low dose rate of 2 Gy(Si)/h approximately agreed with that measured during and after irradiation. (author)

  13. THE PROCESS OF MASS TRANSFER ON THE SOLID-LIQUID BOUNDARY LAYER DURING THE RELEASE OF DICLOFENAC SODIUM AND PAPAVERINE HYDROCHLORIDE FROM TABLETS IN A PADDLE APPARATUS.

    Science.gov (United States)

    Kasperek, Regina; Zimmer, Lukasz; Poleszak, Ewa

    2016-01-01

    The release study of diclofenac sodium (DIC) and papaverine hydrochloride (PAP) from two formulations of the tablets in the paddle apparatus using different rotation speeds to characterize the process of mass transfer on the solid-liquid boundary layer was carried out. The dissolution process of active substances was described by values of mass transfer coefficients, the diffusion boundary layer thickness and dimensionless numbers (Sh and Re). The values of calculated parameters showed that the release of DIC and PAP from tablets comprising potato starch proceeded faster than from tablets containing HPMC and microcrystalline cellulose. They were obtained by direct dependencies between Sh and Re in the range from 75 rpm to 125 rpm for both substances from all tablets. The description of the dissolution process with the dimensionless numbers make it possible to plan the drug with the required release profile under given in vitro conditions.

  14. Spray process for the recovery of CO.sub.2 from a gas stream and a related apparatus

    Science.gov (United States)

    Soloveichik, Grigorii Lev; Perry, Robert James; Wood, Benjamin Rue; Genovese, Sarah Elizabeth

    2014-02-11

    A method for recovering carbon dioxide (CO.sub.2) from a gas stream is disclosed. The method includes the step of reacting CO.sub.2 in the gas stream with fine droplets of a liquid absorbent, so as to form a solid material in which the CO.sub.2 is bound. The solid material is then transported to a desorption site, where it is heated, to release substantially pure CO.sub.2 gas. The CO.sub.2 gas can then be collected and used or transported in any desired way. A related apparatus for recovering carbon dioxide (CO.sub.2) from a gas stream is also described herein.

  15. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  16. Spectroscopic Chemical Analysis Methods and Apparatus

    Science.gov (United States)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor); Bhartia, Rohit (Inventor); Lane, Arthur L. (Inventor)

    2018-01-01

    Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted along with photoluminescence spectroscopy (i.e. fluorescence and/or phosphorescence spectroscopy) to provide high levels of sensitivity and specificity in the same instrument.

  17. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  18. Thermal stir welding apparatus

    Science.gov (United States)

    Ding, R. Jeffrey (Inventor)

    2011-01-01

    A welding method and apparatus are provided for forming a weld joint between first and second elements of a workpiece. The method includes heating the first and second elements to form an interface of material in a plasticized or melted state interface between the elements. The interface material is then allowed to cool to a plasticized state if previously in a melted state. The interface material, while in the plasticized state, is then mixed, for example, using a grinding/extruding process, to remove any dendritic-type weld microstructures introduced into the interface material during the heating process.

  19. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  20. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  1. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  2. Particles in Semiconductor Processing

    NARCIS (Netherlands)

    Knotter, D. Martin; Wali, F.; Kohli, Rajiv; Mittal, Kashmiri L.

    2010-01-01

    Advances in integrated circuits (ICs) have a high impact on society. These advances result in continuously increasing performance of home personal computers, higher density flash memory chips, faster wireless communication in combination with smaller antennas, and all kinds of combinations of the

  3. Theoretical treatment of the processes involving the dipole transitions to the lowest exciton states in hexagonal semiconductors

    Science.gov (United States)

    Semenova, L. E.

    2018-04-01

    The treatment of the two-photon transitions to the An=1 exciton level and the resonant Raman scattering of light by LO-phonons is given for the hexagonal semiconductors A2B6, taking into account the influence of the complex top valence band and anisotropy of the exciton effective mass.

  4. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  5. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  6. Development and evaluation of a collection apparatus for recoil products for study of the deexcitation process of "2"3"5"mU

    International Nuclear Information System (INIS)

    Shigekawa, Y.; Kasamatsu, Y.; Shinohara, A.

    2016-01-01

    The nucleus "2"3"5"mU is an isomer with extremely low excitation energy (76.8 eV) and decays dominantly through the internal conversion (IC) process. Because outer-shell electrons are involved in the IC process, the decay constant of "2"3"5"mU depends on its chemical environment. We plan to study the deexcitation process of "2"3"5"mU by measuring the energy spectra of IC electrons in addition to the decay constants for various chemical forms. In this paper, the preparation method of "2"3"5"mU samples from "2"3"9Pu by using alpha-recoil energy is reported. A Collection Apparatus for Recoil Products was fabricated, and then collection efficiencies under various conditions were determined by collecting "2"2"4Ra recoiling out of "2"2"8Th electrodeposited and precipitated sources. The pressure in the apparatus (vacuum or 1 atm of N_2 gas) affected the variations of the collection efficiencies depending on the negative voltage applied to the collector. The maximum values of the collection efficiencies were mainly affected by the thickness of the "2"2"8Th sources. From these results, the suitable conditions of the "2"3"9Pu sources for preparation of "2"3"5"mU were determined. In addition, dissolution efficiencies were determined by washing collected "2"2"4Ra with solutions. When "2"2"4Ra was collected in 1 atm of N_2 gas and dissolved with polar solutions such as water, the dissolution efficiencies were nearly 100%. The method of rapid dissolution of recoil products would be applicable to rapid preparation of short-lived "2"3"5"mU samples for various chemical forms.

  7. Apparatus for controlling fluidized beds

    Science.gov (United States)

    Rehmat, A.G.; Patel, J.G.

    1987-05-12

    An apparatus and process are disclosed for control and maintenance of fluidized beds under non-steady state conditions. An ash removal conduit is provided for removing solid particulates from a fluidized bed separate from an ash discharge conduit in the lower portion of the grate supporting such a bed. The apparatus and process of this invention is particularly suitable for use in ash agglomerating fluidized beds and provides control of the fluidized bed before ash agglomeration is initiated and during upset conditions resulting in stable, sinter-free fluidized bed maintenance. 2 figs.

  8. Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth

    Science.gov (United States)

    Wang, T.; Ciszek, T. F.

    2006-01-10

    In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

  9. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

    2015-08-24

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

  10. Photo-induced transformation process at gold clusters-semiconductor interface: Implications for the complexity of gold clusters-based photocatalysis

    Science.gov (United States)

    Liu, Siqi; Xu, Yi-Jun

    2016-03-01

    The recent thrust in utilizing atomically precise organic ligands protected gold clusters (Au clusters) as photosensitizer coupled with semiconductors for nano-catalysts has led to the claims of improved efficiency in photocatalysis. Nonetheless, the influence of photo-stability of organic ligands protected-Au clusters at the Au/semiconductor interface on the photocatalytic properties remains rather elusive. Taking Au clusters-TiO2 composites as a prototype, we for the first time demonstrate the photo-induced transformation of small molecular-like Au clusters to larger metallic Au nanoparticles under different illumination conditions, which leads to the diverse photocatalytic reaction mechanism. This transformation process undergoes a diffusion/aggregation mechanism accompanied with the onslaught of Au clusters by active oxygen species and holes resulting from photo-excited TiO2 and Au clusters. However, such Au clusters aggregation can be efficiently inhibited by tuning reaction conditions. This work would trigger rational structural design and fine condition control of organic ligands protected-metal clusters-semiconductor composites for diverse photocatalytic applications with long-term photo-stability.

  11. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-01

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. Copyright © 2015 Elsevier Inc. All rights reserved.

  12. Apparatus for filtering radioactive fluids

    International Nuclear Information System (INIS)

    Gischel, E.H.

    1975-01-01

    Apparatus is provided for filtering radioactive particles from the cooling and/or auxiliary process water of a nuclear reactor, or nuclear fuel processing plant, or other installations wherein radioactive fluid systems are known to exist. The apparatus affords disposal of the captured particles in a manner which minimizes the exposure of operating personnel to radioactivity. The apparatus comprises a housing adapted to contain a removable filter cartridge assembly, a valve normally closing the lower end of the housing, an upwardly-open shipping cask located below the valve, and an elongated operating rod assembly projecting upwardly from the filter cartridge assembly and through the upper end of the housing to enable a workman to dismount the filter cartridge assembly from its housing and to lower the filter cartridge assembly through the valve and into the cask from a remote location above the housing. (U.S.)

  13. Large Rotor Test Apparatus

    Data.gov (United States)

    Federal Laboratory Consortium — This test apparatus, when combined with the National Full-Scale Aerodynamics Complex, produces a thorough, full-scale test capability. The Large Rotor Test Apparatus...

  14. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  15. Effect of dissipative processes on the dispersion and instability of drift waves in a fine-stratified semiconductor structure

    International Nuclear Information System (INIS)

    Bulgakov, A. A.; Shramkova, O. V.

    2006-01-01

    The damping of waves of the charge carrier density in a periodic semiconductor structure in an external electric field is investigated under the assumption that the period of the structure is much smaller than the electromagnetic radiation wavelength. The threshold conditions for the instability of carrier density waves propagating obliquely to the direction of the electric current are obtained. The existence of a resistive instability that can develop at drift velocities both higher and lower than the plasmon phase velocity is predicted

  16. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  17. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  18. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  19. Gamma tomography apparatus

    International Nuclear Information System (INIS)

    Span, F.J.

    1988-01-01

    The patent concerns a gamma tomography apparatus for medical diagnosis. The apparatus comprises a gamma scintillation camera head and a suspension system for supporting and positioning the camera head with respect for the patient. Both total body scanning and single photon emission tomography can be carried out with the apparatus. (U.K.)

  20. ROLLER FILTRATION APPARATUS

    DEFF Research Database (Denmark)

    2017-01-01

    The present invention relates to the field of filtering, more precisely the present invention concerns an apparatus and a method for the separation of dry matter from a medium and the use of said apparatus. One embodiment discloses an apparatus for the separation of dry matter and liquid from a m...

  1. Pore roller filtration apparatus

    DEFF Research Database (Denmark)

    2014-01-01

    The present invention relates to the field of filtering, more precisely the present invention concerns an apparatus and a method for the separation of dry matter from a medium and the use of said apparatus. One embodiment discloses an apparatus for the separation of dry matter from a medium, comp...

  2. Gamma apparatuses for radiotherapy

    International Nuclear Information System (INIS)

    Sul'kin, A.G.

    1986-01-01

    Scientific and technical achievements in development and application of gamma therapeutic apparatuses for external and intracavity irradiations are generalized. Radiation-physical parameters of apparatuses providing usability of progressive methods in radiotherapy of onclogical patients are given. Optimization of main apparatus elements, ensurance of its operation reliability, reduction of errors of irradiation plan reproduction are considered. Attention is paid to radiation safety

  3. Progress in ion implantation equipment for semiconductor manufacturing

    International Nuclear Information System (INIS)

    Kawai, Tadashi; Naito, Masao

    1987-01-01

    In the semiconductor device manufacturing industry, ion implantation systems are used to dope semiconductor substrates with impurities that act as donor or acceptor. In an ion implantation system, required impurity ions are generated from an ion source, subjected to mass analysis, accelerated, converged and implanted in semiconductor wafers. High-tension arc tends to cause troubles in these systems, but improvement in design increased the average operation rate of medium-power systems from bout 70 percent to 90 percent during the past 10 years. Freeman type ion sources have replaced most RF ion sources and cold cathode PIG sources, which had been widely used until the early 1970s. Many of the recent ion sources are equipped with a P and As vaporizer to increase the beam intensity. By an increased beam intensity or decreased handling time in combination with an automatic handling system, the throughput has reached 330 wafers per hour for 10 second implantation. The yield has increased due to the development of improved scanning methods, vacuum devices such as cryopump, and processes and apparatus that serve for preventing particles from being contained in micro-devices. Various other improvements have been made to permit efficient production. (Nogami, K.)

  4. Method and apparatus for producing microspherical particles

    International Nuclear Information System (INIS)

    Egli, W.; Bailey, W.H.; Leary, D.F.; Lansley, R.J.

    1979-01-01

    This invention relates generally to a method and apparatus for producing microspherical particles and more particularly to a method and apparatus which are particularly useful in connection with the sol-gel process for the production of nuclear fuel kernels. (U.K.)

  5. Radiographic scanner apparatus

    International Nuclear Information System (INIS)

    Wake, R.H.

    1980-01-01

    The preferred embodiment of this invention includes a hardware system, or processing means, which operates faster than software. Moreover the computer needed is less expensive and smaller. Radiographic scanner apparatus is described for measuring the intensity of radiation after passage through a planar region and for reconstructing a representation of the attenuation of radiation by the medium. There is a source which can be rotated, and detectors, the output from which forms a data line. The detectors are disposed opposite the planar region from the source to produce a succession of data lines corresponding to the succession of angular orientations of the source. There is a convolver means for convolving each of these data lines, with a filter function, and a means of processing the convolved data lines to create the representation of the radiation attenuation in the planar region. There is also apparatus to generate a succession of data lines indicating radiation attenuation along a determinable path with convolver means. (U.K.)

  6. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  7. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  8. Radioactive waste treatment apparatus

    International Nuclear Information System (INIS)

    Abrams, R.F.; Chellis, J.G.

    1983-01-01

    Radioactive waste treatment apparatus is disclosed in which the waste is burned in a controlled combustion process, the ash residue from the combustion process is removed and buried, the gaseous effluent is treated in a scrubbing solution the pH of which is maintained constant by adding an alkaline compound to the solution while concurrently extracting a portion of the scrubbing solution, called the blowdown stream. The blowdown stream is fed to the incinerator where it is evaporated and the combustibles in the blowdown stream burned and the gaseous residue sent to the scrubbing solution. Gases left after the scrubbing process are treated to remove iodides and are filtered and passed into the atmosphere

  9. Apparatus for control of mercury

    Science.gov (United States)

    Downs, William; Bailey, Ralph T.

    2001-01-01

    A method and apparatus for reducing mercury in industrial gases such as the flue gas produced by the combustion of fossil fuels such as coal adds hydrogen sulfide to the flue gas in or just before a scrubber of the industrial process which contains the wet scrubber. The method and apparatus of the present invention is applicable to installations employing either wet or dry scrubber flue gas desulfurization systems. The present invention uses kraft green liquor as a source for hydrogen sulfide and/or the injection of mineral acids into the green liquor to release vaporous hydrogen sulfide in order to form mercury sulfide solids.

  10. Monitoring apparatus

    International Nuclear Information System (INIS)

    Keats, A.B.

    1981-01-01

    System failure in the acquisition of data from a process plant such as a nuclear reactor owing to stuck signals is avoided by arranging input signals from transducers in the plant in a test pattern. The signal inputs are physically wired in the test pattern which is then decoded by either or both of a computer based system which allows for the test pattern and/or a hard wired system which mimics the input connections. Transmission of the multiplexed signals is made dynamic by provision of a polarity reverser switch which alternates between signals or scans. A pattern recognition logic or a mimicing physical wiring decode the signals from the inputs or the computer system and the hard wired system respectively. (author)

  11. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  12. Radioactive gas solidification apparatus

    International Nuclear Information System (INIS)

    Kobayashi, Yoshihiro; Seki, Eiji; Yabu, Tomohiko; Matsunaga, Hiroyuki.

    1990-01-01

    Handling of a solidification container from the completion for the solidifying processing to the storage of radioactive gases by a remote control equipment such as a manipulator requires a great cost and is difficult to realize. In a radioactive gas solidification device for injection and solidification in accumulated layers of sputtered metals by glow discharge, radiation shieldings are disposed surrounding the entire container, and cooling water is supplied to a cooling vessel formed between the container and the shielding materials. The shielding materials are divided into upper and lower shielding materials, so that solidification container can be taken out from the shielding materials. As a result, the solidification container after the solidification of radioactive gases can be handled with ease. Further, after-heat can be removed effectively from the ion injection electrode upon solidifying treatment upon storage, to attain a radioactive gas solidifying processing apparatus which is safe, economical and highly reliable. (N.H.)

  13. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  14. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  15. Process and apparatus for pyrolytic decomposition and coking of mixtures of finely divided solid carbonaceous material and hydrocarbon oils

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, A

    1933-09-18

    A process is described for pyrolytic decomposition and coking of mixtures of finely divided solid and semi-solid carbonaceous material and hydrocarbon oils, whereby the mixture is first heated to a high temperature; the heated products are introduced into a coking zone, where vapors are separated from nonvaporous residue afterwards to be cracked and condensed, characterized in that the mixture is heated to a high temperature under substantially noncoking conditions and that nonvaporous residue obtained in the coking zone is coked as a relatively thin layer on an externally intensely heated surface, preferably of heat-conducting, fireproof material, such as carborundum, fused-aluminum oxide, or clay.

  16. Multipactor discharge apparatus

    International Nuclear Information System (INIS)

    1976-01-01

    The invention deals with a multipactor discharge apparatus which can be used for tuning microwave organs such as magnetron oscillators and other cavity resonators. This apparatus is suitable for delivering an improved tuning effect in a resonation organ wherefrom the working frequency must be set. This apparatus is equipped with two multipactor discharge electrodes set in a configuration such to that a net current flows from one electrode to another. These electrodes are parallel and flat. The apparatus can be used in magnetron devices as well for continuous waves as for impulses

  17. Radiative Gasification Apparatus

    Data.gov (United States)

    Federal Laboratory Consortium — This apparatus, developed at EL, determines gasification rate (mass loss rate) of a horizontally oriented specimen exposed in a nitrogen environment to a controlled...

  18. Double-beam optical method and apparatus for measuring thermal diffusivity and other molecular dynamic processes in utilizing the transient thermal lens effect

    International Nuclear Information System (INIS)

    Gupta, A.; Hong, S.; Moacanin, J.

    1981-01-01

    A method and apparatus for measuring thermal diffusivity and molecular relaxation processes in a sample material utilizing two light beams, one being a pulsed laser light beam for forming a thermal lens in the sample material, and the other being a relatively low power probe light beam for measuring changes in the refractive index of the sample material during formation and dissipation of the thermal lens. More specifically, a sample material is irradiated by relatively high power, short pulses from a dye laser. Energy from the pulses is absorbed by the sample material, thereby forming a thermal lens in the area of absorption. The pulse repetition rate is chosen so that the thermal lens is substantially dissipated by the time the next pulse reaches the sample material. A probe light beam, which in a specific embodiment is a relatively low power, continuous wave (Cw) laser beam, irradiates the thermal lens formed in the sample material. The intensity characteristics of the probe light beam subsequent to irradiation of the thermal lens is related to changes in the refractive index of the sample material as the thermal lens is formed and dissipated. A plot of the changes in refractive index as a function of time during formation of the thermal lens as reflected by changes in intensity of the probe beam, provides a curve related to molecular relaxation characteristics of the material, and a plot during dissipation of the thermal lens provides a curve related to the thermal diffusivity of the sample material

  19. Method and apparatus for automated processing and aliquoting of whole blood samples for analysis in a centrifugal fast analyzer

    Science.gov (United States)

    Burtis, C.A.; Johnson, W.F.; Walker, W.A.

    1985-08-05

    A rotor and disc assembly for use in a centrifugal fast analyzer. The assembly is designed to process multiple samples of whole blood followed by aliquoting of the resultant serum into precisely measured samples for subsequent chemical analysis. The assembly requires minimal operator involvement with no mechanical pipetting. The system comprises: (1) a whole blood sample disc; (2) a serum sample disc; (3) a sample preparation rotor; and (4) an analytical rotor. The blood sample disc and serum sample disc are designed with a plurality of precision bore capillary tubes arranged in a spoked array. Samples of blood are loaded into the blood sample disc by capillary action and centrifugally discharged into cavities of the sample preparation rotor where separation of serum and solids is accomplished. The serum is loaded into the capillaries of the serum sample disc by capillary action and subsequently centrifugally expelled into cuvettes of the analyticaly rotor for conventional methods. 5 figs.

  20. Process and apparatus for extraction of gases produced during operation of a fused-salt nuclear reactor

    International Nuclear Information System (INIS)

    Blum, J.; Marie, J.

    1976-01-01

    The present invention relates to the field of fused-salt nuclear reactors and its object is the extraction of the gases produced in the course of operation of these reactors. The process according to the invention consists in placing into position a piece of material permeable for gases and impermeable for the used fused salts, for instance, a piece of graphite, in such a way that part of the surface of this piece is in contact with the circuit of the radioactive salts and another part connected to a gas suction device. The piece could also be scavenged in its mass by a flow of inert gas. Application is contemplated in reactors using a mixture of lithium fluoride, beryllium fluoride, and uranium and/or thorium fluoride. 10 claims, 2 drawing figures

  1. Method and apparatus for automated processing and aliquoting of whole blood samples for analysis in a centrifugal fast analyzer

    Science.gov (United States)

    Burtis, Carl A.; Johnson, Wayne F.; Walker, William A.

    1988-01-01

    A rotor and disc assembly for use in a centrifugal fast analyzer. The assembly is designed to process multiple samples of whole blood followed by aliquoting of the resultant serum into precisely measured samples for subsequent chemical analysis. The assembly requires minimal operator involvement with no mechanical pipetting. The system comprises (1) a whole blood sample disc, (2) a serum sample disc, (3) a sample preparation rotor, and (4) an analytical rotor. The blood sample disc and serum sample disc are designed with a plurality of precision bore capillary tubes arranged in a spoked array. Samples of blood are loaded into the blood sample disc in capillary tubes filled by capillary action and centrifugally discharged into cavities of the sample preparation rotor where separation of serum and solids is accomplished. The serum is loaded into the capillaries of the serum sample disc by capillary action and subsequently centrifugally expelled into cuvettes of the analytical rotor for analysis by conventional methods.

  2. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  3. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  4. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  5. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  6. Power electronics cooling apparatus

    Science.gov (United States)

    Sanger, Philip Albert; Lindberg, Frank A.; Garcen, Walter

    2000-01-01

    A semiconductor cooling arrangement wherein a semiconductor is affixed to a thermally and electrically conducting carrier such as by brazing. The coefficient of thermal expansion of the semiconductor and carrier are closely matched to one another so that during operation they will not be overstressed mechanically due to thermal cycling. Electrical connection is made to the semiconductor and carrier, and a porous metal heat exchanger is thermally connected to the carrier. The heat exchanger is positioned within an electrically insulating cooling assembly having cooling oil flowing therethrough. The arrangement is particularly well adapted for the cooling of high power switching elements in a power bridge.

  7. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  8. Apparatus for Teaching Physics.

    Science.gov (United States)

    Gottlieb, Herbert H., Ed.

    1981-01-01

    Describes: (1) a variable inductor suitable for an inductance-capacitance bridge consisting of a fixed cylindrical solenoid and a moveable solenoid; (2) long-range apparatus for demonstrating falling bodies; and (3) an apparatus using two lasers to demonstrate ray optics. (SK)

  9. Pipework inspection apparatus

    International Nuclear Information System (INIS)

    Wrigglesworth, K.J.; Knowles, J.F.

    1987-01-01

    The patent concerns a pipework inspection apparatus, which is capable of negotiating bends in pipework. The apparatus comprises a TV camera system, which contains an optical section and an electronics section, which are connected by a flexible coupling. The system can be pulled or pushed along the bore of the pipework. (U.K.)

  10. Nuclear core baffling apparatus

    International Nuclear Information System (INIS)

    Cooper, F.W. Jr.; Silverblatt, B.L.; Knight, C.B.; Berringer, R.T.

    1979-01-01

    An apparatus for baffling the flow of reactor coolant fluid into and about the core of a nuclear reactor is described. The apparatus includes a plurality of longitudinally aligned baffle plates with mating surfaces that allow longitudinal growth with temperature increases while alleviating both leakage through the aligned plates and stresses on the components supporting the plates

  11. Fractionation and rectification apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Sauerwald, A

    1932-05-25

    Fractionation and rectifying apparatus with a distillation vessel and a stirring tube, drainage tubes leading from its coils to a central collecting tube, the drainage tubes being somewhat parallel and attached to the outer half of the stirring tube and partly on the inner half of the central collecting tube, whereby distillation and rectification can be effected in a single apparatus.

  12. Roadmap on semiconductor-cell biointerfaces

    Science.gov (United States)

    Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

    2018-05-01

    This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

  13. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  14. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Basudev, E-mail: Swain@iae.re.kr [Institute for Advanced Engineering (IAE), Advanced Materials & Processing Center, Yongin-Si 449-863 (Korea, Republic of); Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo [Institute for Advanced Engineering (IAE), Advanced Materials & Processing Center, Yongin-Si 449-863 (Korea, Republic of); Lee, Kun-Jae [Department of Energy Engineering, Dankook University, Cheonan 330-714 (Korea, Republic of)

    2015-07-15

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga{sub 0.97}N{sub 0.9}O{sub 0.09} is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga{sub 0.97}N{sub 0.9}O{sub 0.09} of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4 M HCl, 100 °C and pulp density of 100 kg/m{sup 3,} respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. - Highlights: • Waste MOCVD dust is treated through mechanochemical leaching. • GaN is hardly leached, and converted to NaGaO{sub 2} through ball milling and annealing. • Process for gallium recovery from waste MOCVD dust has been developed. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} is revealed. • Solid-state chemistry involved in this process is reported.

  15. Low-cost Solar Array Project. Feasibility of the Silane Process for Producing Semiconductor-grade Silicon

    Science.gov (United States)

    1979-01-01

    The feasibility of Union Carbide's silane process for commercial application was established. An integrated process design for an experimental process system development unit and a commercial facility were developed. The corresponding commercial plant economic performance was then estimated.

  16. Low Cost Solar Array Project. Feasibility of the silane process for producing semiconductor-grade silicon. Final report, October 1975-March 1979

    Energy Technology Data Exchange (ETDEWEB)

    1979-06-01

    The commercial production of low-cost semiconductor-grade silicon is an essential requirement of the JPL/DOE (Department of Energy) Low-Cost Solar Array (LSA) Project. A 1000-metric-ton-per-year commercial facility using the Union Carbide Silane Process will produce molten silicon for an estimated price of $7.56/kg (1975 dollars, private financing), meeting the DOE goal of less than $10/kg. Conclusions and technology status are reported for both contract phases, which had the following objectives: (1) establish the feasibility of Union Carbide's Silane Process for commercial application, and (2) develop an integrated process design for an Experimental Process System Development Unit (EPSDU) and a commercial facility, and estimate the corresponding commercial plant economic performance. To assemble the facility design, the following work was performed: (a) collection of Union Carbide's applicable background technology; (b) design, assembly, and operation of a small integrated silane-producing Process Development Unit (PDU); (c) analysis, testing, and comparison of two high-temperature methods for converting pure silane to silicon metal; and (d) determination of chemical reaction equilibria and kinetics, and vapor-liquid equilibria for chlorosilanes.

  17. CASTING METHOD AND APPARATUS

    Science.gov (United States)

    Gray, C.F.; Thompson, R.H.

    1958-10-01

    An improved apparatus for the melting and casting of uranium is described. A vacuum chamber is positioned over the casting mold and connected thereto, and a rod to pierce the oxide skin of the molten uranium is fitted into the bottom of the melting chamber. The entire apparatus is surrounded by a jacket, and operations are conducted under a vacuum. The improvement in this apparatus lies in the fact that the top of the melting chamber is fitted with a plunger which allows squeezing of the oxide skin to force out any molten uranium remaining after the skin has been broken and the molten charge has been cast.

  18. Mirror plasma apparatus

    International Nuclear Information System (INIS)

    Moir, R.W.

    1981-01-01

    A mirror plasma apparatus which utilizes shielding by arc discharge to form a blanket plasma and lithium walls to reduce neutron damage to the wall of the apparatus. An embodiment involves a rotating liquid lithium blanket for a tandem mirror plasma apparatus wherein the first wall of the central mirror cell is made of liquid lithium which is spun with angular velocity great enough to keep the liquid lithium against the first material wall, a blanket plasma preventing the lithium vapor from contaminating the plasma

  19. Conduit grinding apparatus

    Science.gov (United States)

    Nachbar, Henry D.; Korytkowski, Alfred S.

    1991-01-01

    A grinding apparatus for grinding the interior portion of a valve stem receiving area of a valve. The apparatus comprises a faceplate, a plurality of cams mounted to an interior face of the faceplate, a locking bolt to lock the faceplate at a predetermined position on the valve, a movable grinder and a guide tube for positioning an optical viewer proximate the area to be grinded. The apparatus can either be rotated about the valve for grinding an area of the inner diameter of a valve stem receiving area or locked at a predetermined position to grind a specific point in the receiving area.

  20. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  1. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  2. The Apparatus of Digital Archaeology

    Directory of Open Access Journals (Sweden)

    Jeremy Huggett

    2017-06-01

    Full Text Available Digital Archaeology is predicated upon an ever-changing set of apparatuses – technological, methodological, software, hardware, material, immaterial – which in their own ways and to varying degrees shape the nature of Digital Archaeology. Our attention, however, is perhaps inevitably more closely focused on research questions, choice of data, and the kinds of analyses and outputs. In the process we tend to overlook the effects the tools themselves have on the archaeology we do beyond the immediate consequences of the digital. This article introduces cognitive artefacts as a means of addressing the apparatus more directly within the context of the developing archaeological digital ecosystem. It argues that a critical appreciation of our computational cognitive artefacts is key to understanding their effects on both our own cognition and on the creation of archaeological knowledge. In the process, it defines a form of cognitive digital archaeology in terms of four distinct methods for extracting cognition from the digital apparatus layer by layer.

  3. Stripline radiation detection apparatus

    International Nuclear Information System (INIS)

    Glasow, P.

    1975-01-01

    A sheet of semiconductor material on the opposite planar sides of which a plurality of spaced parallel stripline electrodes are disposed is described. The electrodes are offset with respect to each other by a predetermined angle, and the resistance of the semiconductor material and the potential applied to the electrodes are selected so that the depth of the field zone created is equal approximately to the distance between the oppositely disposed electrodes at their crosswise points of intersection. The electrodes on the upper side of the sheet are spaced apart by a distance equal to at least twice the combined thickness of the sheet of semiconductor material and the electrodes

  4. Tomographic scanning apparatus

    International Nuclear Information System (INIS)

    1981-01-01

    Details are given of a tomographic scanning apparatus, with particular reference to a multiplexer slip ring means for receiving output from the detectors and enabling interfeed to the image reconstruction station. (U.K.)

  5. Tomographic scanning apparatus

    International Nuclear Information System (INIS)

    1981-01-01

    Details are presented of a tomographic scanning apparatus, its rotational assembly, and the control and circuit elements, with particular reference to the amplifier and multiplexing circuits enabling detector signal calibration. (U.K.)

  6. Tomographic scanning apparatus

    International Nuclear Information System (INIS)

    1981-01-01

    This patent specification relates to a tomographic scanning apparatus using a fan beam and digital output signal, and particularly to the design of the gas-pressurized ionization detection system. (U.K.)

  7. Scintillation counting apparatus

    International Nuclear Information System (INIS)

    Noakes, J.E.

    1978-01-01

    Apparatus is described for the accurate measurement of radiation by means of scintillation counters and in particular for the liquid scintillation counting of both soft beta radiation and gamma radiation. Full constructional and operating details are given. (UK)

  8. Imaging Apparatus And Method

    NARCIS (Netherlands)

    Manohar, Srirang; van Leeuwen, A.G.J.M.

    2010-01-01

    A thermoacoustic imaging apparatus comprises an electromagnetic radiation source configured to irradiate a sample area and an acoustic signal detection probe arrangement for detecting acoustic signals. A radiation responsive acoustic signal generator is added outside the sample area. The detection

  9. IMAGING APPARATUS AND METHOD

    NARCIS (Netherlands)

    Manohar, Srirang; van Leeuwen, A.G.J.M.

    2008-01-01

    A thermoacoustic imaging apparatus comprises an electromagnetic radiation source configured to irradiate a sample area and an acoustic signal detection probe arrangement for detecting acoustic signals. A radiation responsive acoustic signal generator is added outside the sample area. The detection

  10. Thermal Acoustic Fatigue Apparatus

    Data.gov (United States)

    Federal Laboratory Consortium — The Thermal Acoustic Fatigue Apparatus (TAFA) is a progressive wave tube test facility that is used to test structures for dynamic response and sonic fatigue due to...

  11. Light shielding apparatus

    Science.gov (United States)

    Miller, Richard Dean; Thom, Robert Anthony

    2017-10-10

    A light shielding apparatus for blocking light from reaching an electronic device, the light shielding apparatus including left and right support assemblies, a cross member, and an opaque shroud. The support assemblies each include primary support structure, a mounting element for removably connecting the apparatus to the electronic device, and a support member depending from the primary support structure for retaining the apparatus in an upright orientation. The cross member couples the left and right support assemblies together and spaces them apart according to the size and shape of the electronic device. The shroud may be removably and adjustably connectable to the left and right support assemblies and configured to take a cylindrical dome shape so as to form a central space covered from above. The opaque shroud prevents light from entering the central space and contacting sensitive elements of the electronic device.

  12. Tomographic scanning apparatus

    International Nuclear Information System (INIS)

    1981-01-01

    This patent specification describes a tomographic scanning apparatus, with particular reference to the adjustable fan beam and its collimator system, together with the facility for taking a conventional x-radiograph without moving the patient. (U.K.)

  13. Fuel pellet loading apparatus

    International Nuclear Information System (INIS)

    1980-01-01

    Apparatus is described for loading a predetermined amount of nuclear fuel pellets into nuclear fuel elements and particularly for the automatic loading of fuel pellets from within a sealed compartment. (author)

  14. Apparatus for drying sugar cubes

    NARCIS (Netherlands)

    Derckx, H.A.J.; Torringa, H.M.

    1999-01-01

    Device for drying sugar cubes containing a heating apparatus for heating and dehumidifying the sugar cubes, a conditioning apparatus for cooling off and possibly further dehumidifying the sugar cubes and a conveying apparatus for conveying the sugar cubes through the heating apparatus and the

  15. Test sample handling apparatus

    International Nuclear Information System (INIS)

    1981-01-01

    A test sample handling apparatus using automatic scintillation counting for gamma detection, for use in such fields as radioimmunoassay, is described. The apparatus automatically and continuously counts large numbers of samples rapidly and efficiently by the simultaneous counting of two samples. By means of sequential ordering of non-sequential counting data, it is possible to obtain precisely ordered data while utilizing sample carrier holders having a minimum length. (U.K.)

  16. Radiation imaging apparatus

    International Nuclear Information System (INIS)

    1979-01-01

    This invention relates to a radiation imaging apparatus. It relates more particularly to apparatus of this general type which employs stationary X-ray source and detector arrays capable of acquiring multiple ultrafast scans per second to facilitate the dynamic study of moving human organs such as the beating heart. While the invention has many applications, it has particular utility in connection with computerized tomographic (CT) scanners. (Auth.)

  17. X-ray apparatus

    International Nuclear Information System (INIS)

    Tomita, Chuji.

    1980-01-01

    A principal object of the present invention is to provide an X-ray apparatus which is such that the distance between the surface of the patient's table and the floor on which the apparatus is installed is sufficiently small in the horizontal position of the patient's table of the roentgenographical pedestal and that the rotation of the pedestal from the horizontal position to a tilted position and further to the vertical position of the table can be carried out smoothly. (auth)

  18. Sludge recovery apparatus

    International Nuclear Information System (INIS)

    Marmo, A.R.

    1979-01-01

    An improved design of a sludge recovery apparatus used in the fabrication of nuclear fuel is described. This apparatus provides for automatic separation of sludge from the grinder coolant, drying of the sludge into a flowable powder and transfer of the dry powder to a salvage container. It can be constructed to comply with criticality-safe-geometry requirements and to obviate need for operating personnel in its immediate vicinity. (UK)

  19. Infrared microscope inspection apparatus

    Science.gov (United States)

    Forman, Steven E.; Caunt, James W.

    1985-02-26

    Apparatus and system for inspecting infrared transparents, such as an array of photovoltaic modules containing silicon solar cells, includes an infrared microscope, at least three sources of infrared light placed around and having their axes intersect the center of the object field and means for sending the reflected light through the microscope. The apparatus is adapted to be mounted on an X-Y translator positioned adjacent the object surface.

  20. Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

    Energy Technology Data Exchange (ETDEWEB)

    Vais, Abhitosh, E-mail: Abhitosh.Vais@imec.be; Martens, Koen; DeMeyer, Kristin [Department of Electrical Engineering, KU Leuven, B-3000 Leuven (Belgium); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Lin, Han-Chung; Ivanov, Tsvetan; Collaert, Nadine; Thean, Aaron [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Dou, Chunmeng [Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Xie, Qi; Maes, Jan [ASM International, B-3001 Leuven (Belgium); Tang, Fu; Givens, Michael [ASM International, Phoenix, Arizona 85034-7200 (United States); Raskin, Jean-Pierre [Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Universiteé Catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium)

    2015-08-03

    This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices. The dispersion in the accumulation region of the capacitance data is found to change from 4%–9% (per decade frequency) to ∼0% when the temperature is reduced from 300 K to 4 K in a wide range of MOS capacitors with different gate dielectrics and III-V substrates. We show that such significant temperature dependence of C-V frequency dispersion cannot be due to the temperature dependence of channel electrostatics, i.e., carrier density and surface potential. We also show that the temperature dependence of frequency dispersion, and hence, the capture/emission process of border traps can be modeled by a combination of tunneling and a “temperature-activated” process described by a non-radiative multi-phonon model, instead of a widely believed single-step elastic tunneling process.

  1. Energy resolution and throughput of a new real time digital pulse processing system for x-ray and gamma ray semiconductor detectors

    International Nuclear Information System (INIS)

    Abbene, L; Gerardi, G; Raso, G; Brai, M; Principato, F; Basile, S

    2013-01-01

    New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring higher flexibility, stability, lower dead time, higher throughput and better spectroscopic performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors, coupled to resistive-feedback preamplifiers, highlight the excellent performance of the system both at low and high rate environments (up to 800 kcps). A comparison with a conventional analog electronics showed the better high-rate capabilities of the digital approach, in terms of energy resolution and throughput. These results make the proposed DPP system a very attractive tool for both laboratory research and for the development of advanced detection systems for high-rate-resolution spectroscopic imaging, recently proposed in diagnostic medicine, industrial imaging and security screening

  2. Computerized dosimetric system for studying radiation fields of afterloading apparatus

    International Nuclear Information System (INIS)

    Andryushin, O.S.; Gorshkov, M.I.

    1988-01-01

    Works on designing a computerized dosimetric scanner (CODOS) for studying radiation fields of remote therapeutic apparatus, providing dosimetric data input from semiconductor transducers and ionization chambers directly into the computer memory were carried out. The basic problems were to provide reproducibility and accuracy of the initial dosimetric data, formation of the data bank on LUEhV-15M1 accelerator bremsstrahlung and electron radiation fields. An extra problem was to provide isodose curves for manual scheduling of radiotherapy. The 15 VUMS-28-025 complex based on Elektronika-60 computer was chosen as a host computer, photodiodes were used as a semiconductor detector, the 70108 rod chamber and VA-J-18 dosemeters were used as an ionization chamber. The results of studies with the CODOS system have been shown that it meets the dosimetric requirements for therapeutic apparatus

  3. Foreshocks and Aftershocks Detected from Stick-slip Events on a 3 m Biaxial Apparatus and their Relationship to Quasistatic Nucleation and Wear Processes

    Science.gov (United States)

    Wu, S.; Mclaskey, G.

    2017-12-01

    We investigate foreshocks and aftershocks of dynamic stick-slip events generated on a newly constructed 3 m biaxial friction apparatus at Cornell University (attached figure). In a typical experiment, two rectangular granite blocks are squeezed together under 4 or 7 MPa of normal pressure ( 4 or 7 million N on a 1 m2 fault surface), and then shear stress is increased until the fault slips 10 - 400 microns in a dynamic rupture event similar to a M -2 to M -3 earthquake. Some ruptures nucleate near the north end of the fault, where the shear force is applied, other ruptures nucleate 2 m from the north end of the fault. The samples are instrumented with 16 piezoelectric sensors, 16 eddy current sensors, and 8 strain gage rosettes, evenly placed along the fault to measure vertical ground motion, local slip, and local stress, respectively. We studied sequences of tens of slip events and identified a total of 194 foreshocks and 66 aftershocks located within 6 s time windows around the stick-slip events and analyzed their timing and locations relative to the quasistatic nucleation process. We found that the locations of the foreshocks and aftershocks were distributed all along the length of the fault, with the majority located at the ends of the fault where local normal and shear stress is highest (caused by both edge effects and the finite stiffness of the steel frame surrounding the granite blocks). We also opened the laboratory fault and inspected the fault surface and found increased wear at the sample ends. To explore the foreshocks' and aftershocks' relationship to the nucleation and afterslip, we compared the occurrence of foreshocks to the local slip rate on the laboratory fault closest to each foreshock in space and time. We found that that majority of foreshocks were generated from local slip rates between 1 and 100 microns/s, though we were not able to resolve slip rate lower than about 1 micron/s. Our experiments provide insight into how foreshocks and

  4. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  5. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  6. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  7. Miniature pulsed vacuum arc plasma gun and apparatus for thin-film fabrication

    Science.gov (United States)

    Brown, Ian G.; MacGill, Robert A.; Galvin, James E.; Ogletree, David F.; Salmeron, Miquel

    1998-01-01

    A miniature (dime-size in cross-section) vapor vacuum arc plasma gun is described for use in an apparatus to produce thin films. Any conductive material can be layered as a film on virtually any substrate. Because the entire apparatus can easily be contained in a small vacuum chamber, multiple dissimilar layers can be applied without risk of additional contamination. The invention has special applications in semiconductor manufacturing.

  8. Semiconductor Photocatalysis

    DEFF Research Database (Denmark)

    Zawadzki, Pawel

    Photocatalysis (the acceleration of a photoreaction in the presence of a catalyst) is presently used in large variety of applications and is one of the possible strategies for future sustainable fuel production from solar energy. A general picture of a photocatalytic process is well known...... spectroscopies are common techniques to study hole dynamics in TiO2 these results should aid analysis of photocatalytic processes on TiO2. Apart from photocatalysis this thesis also deals with the problem of the localization/delocaliztion error in approximate DFT functionals-the effect of the incorrect...

  9. Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors

    Science.gov (United States)

    2017-12-01

    release stack. Recently, this technique has been refined with band engineering within the release layer7 and extended to the point where it has been...liftoff. Mesas with a 200-μm diameter are lithographically defined and etched down to a depth of approximately 450 nm using a plasma etching chemistry ...etch chemistry , bonding, and other materials processing vary, but the setup created for this project can be applied to others as well. Approved

  10. Apparatus for ultrasonic nebulization

    International Nuclear Information System (INIS)

    Olson, K.W.; Haas, W.J. Jr.; Fassel, V.A.

    1978-01-01

    An improved apparatus is described for ultrasonic nebulization of liquid samples or suspensions in which the piezoelectric transducer is protected from chemical attack and erosion. The transducer is protected by being bonded to the inner surface of a glass plate which forms one end wall of a first hollow body provided with apparatus for circulating a fluid for cooling and stabilizing the transducer. The glass plate, which is one-half wavelength in thickness to provide an acoustically coupled outer nebulizing surface, seals an opening in a second hollow body which encloses an aerosol mixing chamber. The second body includes apparatus for delivering the sample solution to the nebulizing surface, a gas inlet for providing a flow of carrier gas for transporting the aerosol of the nebulized sample and an aerosol outlet

  11. Electroplating method and apparatus

    International Nuclear Information System (INIS)

    Looney, R.B.; Smith, W.E.L.

    1978-01-01

    Disclosed is an apparatus for high speed electroplating or anodizing tubular members such as nuclear reactor fuel elements. A loading arm positions the member on a base for subsequent support by one of two sets of electrical contacts. A carriage assembly positions electrodes into and around the member. Electrolyte is pumped between the electrodes and the member while electric current is applied. Programmed controls sequentially employ each of the two sets of contacts to expose all surfaces of the member to the electrolyte. The member is removed from the apparatus by an unloading arm

  12. Electroplating method and apparatus

    Science.gov (United States)

    Looney, Robert B.; Smith, William E. L.

    1978-06-20

    An apparatus for high speed electroplating or anodizing tubular members such as nuclear reactor fuel elements. A loading arm positions the member on a base for subsequent support by one of two sets of electrical contacts. A carriage assembly positions electrodes into and around the member. Electrolyte is pumped between the electrodes and the member while electric current is applied. Programmed controls sequentially employ each of the two sets of contacts to expose all surfaces of the member to the electrolyte. The member is removed from the apparatus by an unloading arm.

  13. Electron-rich anthracene semiconductors containing triarylamine for solution-processed small-molecule organic solar cells.

    Science.gov (United States)

    Choi, Hyeju; Ko, Haye Min; Cho, Nara; Song, Kihyung; Lee, Jae Kwan; Ko, Jaejung

    2012-10-01

    New electron-rich anthracene derivatives containing triarylamine hole stabilizers, 2,6-bis[5,5'-bis(N,N'-diphenylaniline)-2,2'-bithiophen-5-yl]-9,10-bis-[(triisopropylsilyl)ethynyl]anthracene (TIPSAntBT-TPA) and 2,6-bis(5,5'-bis{4-[bis(9,9-dimethyl-9H-fluoren-2-yl)amino]phenyl}-2,2'-bithiophen-5-yl)-9,10-bis-[(triisopropylsilyl)ethynyl]anthracene (TIPSAntBT-bisDMFA), linked with π-conjugated bithiophene bridges, were synthesized and their photovoltaic characteristics were investigated in solution-processed small-molecule organic solar cells (SMOSCs). These new materials exhibited superior intramolecular charge transfer from triarylamine to anthracene, leading to a more electron-rich anthracene core that facilitated electron transfer into phenyl-C(61)-butyric acid methyl ester. Compared with TIPSAntBT and triarylamine, these materials show a threefold improvement in hole-transporting properties and better photovoltaic performance in solution-processed SMOSCs, with the best power conversion efficiency being 2.96 % at a high open-circuit voltage of 0.85 V. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Control of a metalorganic chemical vapor deposition process for improved composition and thickness precision in compound semiconductors

    Science.gov (United States)

    Gaffney, Monique Suzanne

    1998-11-01

    Metalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. Controlling the growth rate and composition using the existing sensors, as well as advanced monitoring systems developed in-house, is shown to improve device quality. Specific MOCVD growth objectives are transformed into controller performance goals. Group III bubbler concentration variations, which perturb both growth rate and composition precision, are identified to be the primary disturbances. First a feed forward control system was investigated, which used an ultrasonic concentration monitor, located upstream in the process. This control strategy resulted in improved regulation of the gallium delivery rate by cancelling the sensed gallium bubbler concentration disturbances via the injection mass flow controller. The controller performance is investigated by growing GaInAs/InP superlattices. Results of growths performed under normal operating conditions and also under large perturbations include X-ray diffraction from the samples as well as real-time sensor signal data. High quality superlattices that display up to eight orders of satellite peaks are obtained under the feed forward compensation scheme, demonstrating improved layer-to-layer reproducibility of thickness and composition. The success of the feed forward control demonstration led to the development of a more complex downstream feedback control system. An ultraviolet absorption monitor was fabricated and retrofitted as a feedback control signal. A control-oriented model of the downstream process was developed for the feedback controller synthesis. Although challenged with both the photolysis and multi-gas detection issues common to UV absorption monitors, closed loop control with the UV sensor was performed and proved to be an effective method of disturbance rejection. An InP/GaInAs test structure was grown under

  15. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  16. Positioning and locking apparatus

    Science.gov (United States)

    Hayward, M.L.; Harper, W.H.

    1985-06-19

    A positioning and locking apparatus including a fixture having a rotatable torque ring provided with a plurality of cam segments for automatically guiding a container into a desired location within the fixture. Rotation of the ring turns the container into a final position in pressure sealing relation against a hatch member.

  17. Electrolysis apparatus and method

    International Nuclear Information System (INIS)

    1975-01-01

    A procedure in which electrolysis is combined with radiolysis to improve the reaction yield is proposed for the production of hydrogen and oxygen from water. An apparatus for this procedure is disclosed. High-energy electric pulses are applied between the anode and kathode of an electrolytical cell in such a way that short-wave electromagnetic radiation is generated at the same time

  18. Mobile lighting apparatus

    Science.gov (United States)

    Roe, George Michael; Klebanoff, Leonard Elliott; Rea, Gerald W; Drake, Robert A; Johnson, Terry A; Wingert, Steven John; Damberger, Thomas A; Skradski, Thomas J; Radley, Christopher James; Oros, James M; Schuttinger, Paul G; Grupp, David J; Prey, Stephen Carl

    2013-05-14

    A mobile lighting apparatus includes a portable frame such as a moveable trailer or skid having a light tower thereon. The light tower is moveable from a stowed position to a deployed position. A hydrogen-powered fuel cell is located on the portable frame to provide electrical power to an array of the energy efficient lights located on the light tower.

  19. Apparatus for decomposing shale

    Energy Technology Data Exchange (ETDEWEB)

    Gislain, M

    1865-06-20

    The apparatus is designed to fulfill the three following conditions: (1) complete extraction of the mineral oil, by avoiding partial decomposition; (2) purification of the said oil from products formed in the decomposition of the shale; (3) breaking down of the said oil into more products of different density. The separation of the heavy and bituminous products is claimed.

  20. Building scientific apparatus

    National Research Council Canada - National Science Library

    Moore, John H; Davis, Christopher C; Coplan, Michael A; Greer, Sandra C

    2009-01-01

    ... specification of the components of apparatus, many new to this edition. Data on the properties of materials and components used by manufacturers are included. Mechanical, optical, and electronic construction techniques carried out in the laboratory, as well as those let out to specialized shops, are also described. Step-by-step instruc...

  1. FY 1999 achievement report on the project on the R and D of university-cooperation industrial science technology. Semiconductor device production process by Cat-CVD method (Semiconductor device production process by Cat-CVD method); 1999 nendo Cat-CVD ho ni yoru handotai device seizo process seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The paper described the results obtained by FY 1999 of the semiconductor device production using the catalytic chemical vapor deposition method. As to the thermal fluid simulation modeling in the thermal insulation thin film formation process, elucidated were the decomposition rate (40%) of SiH{sub 4} gas on catalyst body and the gas use efficiency (60% in two collisions with catalyst body). The range where the gas flow has effects was made clear. In researches on the substrate temperature control and catalyst body structure, thermal radiation effects from catalyst body were evaluated, which led to a success in high-speed deposition of high-quality a-Si. Concerning the optical monitor technology in film deposition, the identification of decomposition species (Si, etc.) and temperature of decomposition species could be made clear. Effects of pollutant removal were also monitored. Relating to the basic technology for thermal insulation thin film formation, conditions for Si nitride film formation were made clear, and stoichiometric composition films of Si{sub 3}N{sub 4} were acquired at low temperature of 300 degrees C. Also acquired were high etching resistant/high wetting resistant films. As to the ultra-high purity thin film formation, it was successful to find out the metal pollution resource and remove it. In regard to the Cat-CVD application on to metal oxide ferroelectric substances, low temperature Si{sub 3}N{sub 4} films could be formed at deposition speed of 20nm/min. by making the temperature condition (200 degrees C or less) clear and controlling the substrate temperature. (NEDO)

  2. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  3. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  4. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  5. Synthesis of electronically modified carbon nitride from a processable semiconductor, 3-aminotriazole-1,2,4 oligomer, via a topotactic-like phase transition

    OpenAIRE

    Savateev, A.; Pronkin, S.; Epping, J.; Willinger, M.; Antonietti, M.; Dontsova, D.

    2017-01-01

    The thermally induced topotactic transformation of organic polymeric semiconductors is achieved using similarity of the chemical structures of the two C,N,H-containing materials. Namely, the oligomer of 3-aminotriazole-1,2,4 (OATA) is transformed into an electronically modified graphitic carbon nitride (OATA-CN) upon heating at 550 °C. During the transition, the flat band potential of the organic semiconductor is only slightly shifted from -0.11 eV to -0.06 eV, while the optical band gap is s...

  6. Semiconductor research capabilities at the Lawrence Berkeley Laboratory

    International Nuclear Information System (INIS)

    1987-02-01

    This document discusses semiconductor research capabilities (advanced materials, processing, packaging) and national user facilities (electron microscopy, heavy-ion accelerators, advanced light source)

  7. Method for depositing high-quality microcrystalline semiconductor materials

    Science.gov (United States)

    Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  8. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  9. Methods and apparatus for controlling rotary machines

    Science.gov (United States)

    Bagepalli, Bharat Sampathkumaran [Niskayuna, NY; Jansen, Patrick Lee [Scotia, NY; Barnes, Gary R [Delanson, NY; Fric, Thomas Frank [Greer, SC; Lyons, James Patrick Francis [Niskayuna, NY; Pierce, Kirk Gee [Simpsonville, SC; Holley, William Edwin [Greer, SC; Barbu, Corneliu [Guilderland, NY

    2009-09-01

    A control system for a rotary machine is provided. The rotary machine has at least one rotating member and at least one substantially stationary member positioned such that a clearance gap is defined between a portion of the rotating member and a portion of the substantially stationary member. The control system includes at least one clearance gap dimension measurement apparatus and at least one clearance gap adjustment assembly. The adjustment assembly is coupled in electronic data communication with the measurement apparatus. The control system is configured to process a clearance gap dimension signal and modulate the clearance gap dimension.

  10. Method and apparatus to control the lateral motion of a long metal bar being formed by a mechanical process such as rolling or drawing

    Science.gov (United States)

    Chang, Tzyy-Shuh [Ann Arbor, MI; Huang, Hsun-Hau [Ann Arbor, MI; Lin, Chang-Hung [Ypsilanti, MI

    2011-01-04

    An apparatus to control lateral motion of a bar moving along a guidance path includes a pair of rotatable hubs each having at least first and second rollers at locations around the perimeter of the hub. The first roller has a first retaining groove of a first radius and the second roller has a second groove of a second radius smaller than the first radius. Each hub further includes at least one guiding element located between the rollers with a guide channel extending in the outer surface. A mounting system allows the hubs to be rotated between first and second positions. In the first position the first rollers oppose each other forming a guideway having a first, enlarged diameter for capturing a free end of an approaching bar. In the second position the second rollers form a second, smaller diameter to match the actual size of the bar.

  11. Process Challenges in Compound Semiconductors.

    Science.gov (United States)

    1988-08-01

    dimension in GaAs quantum well wires and boxes. Appl. Phys. Lett. 49:1275. Cox, H. M., S. G. Hummel, and V. G. Keramidas. 1986. Vapor levitation epitaxy...improved materials, and new device concepts. Many of these involve the fabrication of multilayer structures for quantum well lasers and detectors...dimensions, where quantum effects dominate, has already led to a number of conceptual breakthroughs for new devices and circuits. Such breakthroughs are

  12. Uranium dioxide calcining apparatus and method

    International Nuclear Information System (INIS)

    Cole, E.A.; Peterson, R.S.

    1978-01-01

    This invention relates to an improved continuous calcining apparatus for consistently and controllably producing from calcinable reactive solid compounds of uranium, such as ammonium diuranate, uranium dioxide (UO 2 ) having an oxygen to uranium ratio of less than 2.2. The apparatus comprises means at the outlet end of a calciner kiln for receiving hot UO 2 , means for cooling the UO 2 to a temperature of below 100 0 C and conveying the cooled UO 2 to storage or to subsequent UO 2 processing apparatus where it finally comes into contact with air, the means for receiving, cooling and conveying being sealed to the outlet end of the calciner and being maintained full of UO 2 and so operable as to exclude atmospheric oxygen from coming into contact with any UO 2 which is at elevated temperatures where it would readily oxidize, without the use of extra hydrogen gas in said means

  13. Electroless plating apparatus for discrete microsized particles

    International Nuclear Information System (INIS)

    Mayer, A.

    1978-01-01

    Method and apparatus are disclosed for producing very uniform coatings of a desired material on discrete microsized particles by electroless techniques. Agglomeration or bridging of the particles during the deposition process is prevented by imparting a sufficiently random motion to the particles that they are not in contact with each other for a time sufficient for such to occur

  14. Electrolytic plating apparatus for discrete microsized particles

    International Nuclear Information System (INIS)

    Mayer, A.

    1976-01-01

    Method and apparatus are disclosed for electrolytically producing very uniform coatings of a desired material on discrete microsized particles. Agglomeration or bridging of the particles during the deposition process is prevented by imparting a sufficiently random motion to the particles that they are not in contact with a powered cathode for a time sufficient for such to occur. 4 claims, 2 figures

  15. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  16. Nuclear magnetic resonance apparatus

    International Nuclear Information System (INIS)

    Lambert, R.

    1991-01-01

    In order to include the effect of a magnetic object in a subject under investigation, Nuclear Magnetic Resonance (NMR) apparatus is operable at more than one radio frequency (RF) frequency. The apparatus allows normal practice as far as obtaining an NMR response or image from a given nuclear species is concerned, but, in addition, interrogates the nuclear spin system at a frequency which is different from the resonance frequency normally used for the given nuclear species, as determined from the applied magnetic field. The magnetic field close to a magnetised or magnetisable object is modified and the given nuclear species gives a response at the different frequency. Thus detection of a signal at the frequency indicates the presence of the chosen nuclei close to the magnetised or magnetisable object. Applications include validation of an object detection or automatic shape inspection system in the presence of magnetic impurities, and the detection of magnetic particles which affect measurement of liquid flow in a pipe. (author)

  17. Ion implantation apparatus

    International Nuclear Information System (INIS)

    Forneris, J.L.; Hicks, W.W.; Keller, J.H.; McKenna, C.M.; Siermarco, J.A.; Mueller, W.F.

    1981-01-01

    The invention relates to ion bombardment or implantation apparatus. It comprises an apparatus for bombarding a target with a beam of ions, including an arrangement for measuring the ion beam current and controlling the surface potential of the target. This comprises a Faraday cage formed, at least in part, by the target and by walls adjacent to, and electrically insulated from, the target and surrounding the beam. There is at least one electron source for supplying electrons to the interior of the Faraday cage and means within the cage for blocking direct rectilinear radiation from the source to the target. The target current is measured and combined with the wall currents to provide a measurement of the ion beam current. The quantity of electrons supplied to the interior of the cage can be varied to control the target current and thereby the target surface potential. (U.K.)

  18. Improvements in measuring apparatus

    International Nuclear Information System (INIS)

    Casey, W.

    1976-01-01

    Measuring apparatus is described that is suitable for gauging the wall profiles of downwardly extending channels in nuclear reactors, but which is equally applicable to channels such as pipe bores and conduits in other types of plant. The apparatus comprises a probe carrying a measuring transducer giving an electrical output. The probe support may be moved stepwise along the channel along a track between end members. An electrical conductor is provided for transmitting the electrical output of the transducer to an indicator located remote from the probe. The probe support may consist of a cable attached at one end to a winding drum, and incorporating an electrical conductor connected to the transducer. Channel engaging means are provided on the probe that permits free upward movement of the probe when the latter is suspended by the cable and moves into gripping engagement with the channel wall when the tension in the cable is relaxed. (U.K.)

  19. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  20. Wave disc engine apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Muller, Norbert; Piechna, Janusz; Sun, Guangwei; Parraga, Pablo-Francisco

    2018-01-02

    A wave disc engine apparatus is provided. A further aspect employs a constricted nozzle in a wave rotor channel. A further aspect provides a sharp bend between an inlet and an outlet in a fluid pathway of a wave rotor, with the bend being spaced away from a peripheral edge of the wave rotor. A radial wave rotor for generating electricity in an automotive vehicle is disclosed in yet another aspect.

  1. Medical radiological apparatus

    International Nuclear Information System (INIS)

    1980-01-01

    With the apparatus described, images can be obtained by rotation scanning and the image formation from a three dimensional image matrix is converted into an overall picture. Detectors for both X-ray radiation and γ radiation are present and these consist of a row of detector elements, from each of which a separate read-out can be obtained. Therefore both X-ray and γ ray images emitted from the examined object can be obtained. (Th.P.)

  2. Multicusp plasma containment apparatus

    International Nuclear Information System (INIS)

    Limpaecher, R.

    1980-01-01

    It has been discovered that plasma containment by a chamber having multi-pole magnetic cusp reflecting walls in combination with electronic injection for electrostatic containment provides the means for generating magnetic field free quiescent plasmas for practical application in ion-pumps, electronic switches, and the like. 1250 ''alnico v'' magnets 1/2 '' X 1/2 '' X 1 1/2 '' provide containment in one embodiment. Electromagnets embodying toroidal funneling extend the principle to fusion apparatus

  3. Apparatus for obtaining radiographs

    International Nuclear Information System (INIS)

    Frank, L.F.

    1977-01-01

    An apparatus for making x-ray pictures by imagewise exposing a cloud chamber containing a high atomic number gas mixed with a condensate vapor is described. The gas is under sufficiently high pressure to assure substantially complete absorption of the incident x-rays. Optical means are provided so that visible x-ray tracks are viewed from a direction aligned with the tracks

  4. Thermal power measurement apparatus

    International Nuclear Information System (INIS)

    1981-01-01

    Thermal power measurements are important in nuclear power plants, fossil-fuel plants and other closed loop systems such as heat exchangers and chemical reactors. The main object of this invention is to determine the enthalpy of a fluid using only acoustically determined sound speed and correlating the speed with enthalpy. An enthalpy change is measured between two points in the fluid flow: the apparatus is described in detail. (U.K.)

  5. Fast Etching of Molding Compound by an Ar/O2/CF4 Plasma and Process Improvements for Semiconductor Package Decapsulation

    NARCIS (Netherlands)

    Tang, J.; Gruber, D.; Schelen, J.B.J.; Funke, H.J.; Beenakker, C.I.M.

    2012-01-01

    Decapsulation of a SOT23 semiconductor package with 23 um copper wire bonds is conducted with an especially designed microwave induced plasma system. It is found that a 30%-60% CF4 addition in the O2/CF4 etchant gas results in high molding compound etching rate. Si3N4 overetching which is

  6. A Furan-Thiophene-Based Quinoidal Compound: A New Class of Solution-Processable High-Performance n-Type Organic Semiconductor.

    Science.gov (United States)

    Xiong, Yu; Tao, Jingwei; Wang, Ruihao; Qiao, Xiaolan; Yang, Xiaodi; Wang, Deliang; Wu, Hongzhuo; Li, Hongxiang

    2016-07-01

    The furan-thiophene-based quinoidal organic semiconductor, TFT-CN, is designed and synthesized. TFT-CN displays a high electron mobility of 7.7 cm(2) V(-1) s(-1) , two orders of magnitude higher than the corresponding thiophene-based derivative. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Air-cleaning apparatus

    International Nuclear Information System (INIS)

    Howard, A.G.

    1981-01-01

    An air-cleaning, heat-exchange apparatus includes a main housing portion connected by means of an air inlet fan to the kitchen exhaust stack of a restaurant. The apparatus includes a plurality of heat exchangers through which a heat-absorptive fluid is circulated, simultaneously, by means of a suitable fluid pump. These heat exchangers absorb heat from the hot exhaust gas, out of the exhaust stack of the restaurant, which flows over and through these heat exchangers and transfers this heat to the circulating fluid which communicates with remote heat exchangers. These remote heat exchangers further transfer this heat to a stream of air, such as that from a cold-air return duct for supplementing the conventional heating system of the restaurant. Due to the fact that such hot exhaust gas is heavily grease laden , grease will be deposited on virtually all internal surfaces of the apparatus which this exhaust gas contacts. Consequently, means are provided for spraying these contacted internal surfaces , as well as the hot exhaust gas itself, with a detergent solution in which the grease is soluble, thereby removing grease buildup from these internal surfaces

  8. Dosimeter charging apparatus

    International Nuclear Information System (INIS)

    Reuter, F.A.; Moorman, Ch.J.

    1985-01-01

    An apparatus for charging a dosimeter which has a capacitor connected between first and second electrodes and a movable electrode in a chamber electrically connected to the first electrode. The movable electrode deflects varying amounts depending upon the charge present on said capacitor. The charger apparatus includes first and second charger electrodes couplable to the first and second dosimeter electrodes. To charge the dosimeter, it is urged downwardly into a charging socket on the charger apparatus. The second dosimeter electrode, which is the dosimeter housing, is electrically coupled to the second charger electrode through a conductive ring which is urged upwardly by a spring. As the dosimeter is urged into the socket, the ring moves downwardly, in contact with the second charger electrode. As the dosimeter is further urged downwardly, the first dosimeter electrode and first charger electrode contact one another, and an insulator post carrying the first and second charger electrodes is urged downwardly. Downward movement of the post effects the application of a charging potential between the first and second charger electrodes. After the charging potential has been applied, the dosimeter is moved further into the charging socket against the force of a relatively heavy biasing spring until the dosimeter reaches a mechanical stop in the charging socket

  9. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  10. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  11. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  12. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

  13. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  14. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  15. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  16. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  17. Water intake fish diversion apparatus

    International Nuclear Information System (INIS)

    Taft, E.P. III; Cook, T.C.

    1995-01-01

    A fish diversion apparatus uses a plane screen to divert fish for variety of types of water intakes in order to protect fish from injury and death. The apparatus permits selection of a relatively small screen angle, for example ten degrees, to minimize fish injury. The apparatus permits selection of a high water velocity, for example ten feet per second, to maximize power generation efficiency. The apparatus is especially suitable retrofit to existing water intakes. The apparatus is modular to allow use plural modules in parallel to adjust for water flow conditions. The apparatus has a floor, two opposite side walls, and a roof which define a water flow passage and a plane screen within the passage. The screen is oriented to divert fish into a fish bypass which carries fish to a safe discharge location. The dimensions of the floor, walls, and roof are selected to define the dimensions of the passage and to permit selection of the screen angle. The floor is bi-level with a level upstream of the screen and a level beneath screen selected to provide a uniform flow distribution through the screen. The apparatus may include separation walls to provide a water flow channel between the apparatus and the water intake. Lead walls may be used to adjust water flow conditions into the apparatus. The apparatus features stoplog guides near its upstream and downstream ends to permit the water flow passage to be dewatered. 3 figs

  18. Model of Coupled Drives Apparatus – Static and Dynamic Characteristics

    Directory of Open Access Journals (Sweden)

    Chalupa Petr

    2016-01-01

    Full Text Available The paper presents an initial part of a modelling the Coupled Drives Apparatus CE108 developed by TecQuipment Ltd. The final model should be used in the process of control design for the apparatus. The model derived by the developers of the apparatus using first-principle modelling is used as a starting point for comparison of its properties with measured characteristics. The static and dynamic characteristics of the real-time apparatus are presented and discussed. Special attention is paid to principal differences between the model and the real-time apparatus. Real-time measurements are obtained using MATLAB / Simulink environment in connection with a Real-time Toolbox. Evaluation of the experiments is also performed in the MATLAB environment

  19. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  20. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  1. Informationization nuclear apparatus communication technique

    International Nuclear Information System (INIS)

    Yu Tiqi; Fang Zongliang; Wen Qilin

    2006-01-01

    The paper explains the request of communication ability in nuclear technique application area. Based on the actuality of nuclear apparatus communication ability, and mainly combining with the development of communication technique, the authors analyzes the application trend of communication technique applying in nuclear apparatus, for the apparatus and system needing communication ability, they need selecting suitable communication means to make them accomplish the task immediately and effectively. (authors)

  2. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  3. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  4. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  5. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  6. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  7. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  8. Magnetic resonance imaging apparatus

    International Nuclear Information System (INIS)

    Ehnholm, G.J.

    1991-01-01

    This patent describes an electron spin resonance enhanced magnetic resonance (MR) imaging (ESREMRI) apparatus able to generate a primary magnetic field during periods of nuclear spin transition excitation and magnetic resonance signal detection. This allows the generation of ESREMRI images of a subject. A primary magnetic field of a second and higher value generated during periods of nuclear spin transition excitation and magnetic resonance signal detection can be used to generate conventional MR images of a subject. The ESREMRI and native MR images so generated may be combined, (or superimposed). (author)

  9. Improvements in radiological apparatus

    International Nuclear Information System (INIS)

    Grady, J.K.

    1985-01-01

    Improvements in radiological apparatus are described which allow better unilateral access to the patient. A base mounts ring supports for rotation about an axis and a table for supporting a subject is fitted to the ring support. An X-ray tube and receptor are held on opposite ends of a two-limbed carriage and radiation axis. The carriage is mounted on a sliding arm carried on the ring support and extending parallel to the rotational axis of the support. The carriage also pivots on the arm about an axis perpendicular to the rotational axis and to the radiation axis. (author)

  10. Tomographic scanning apparatus

    International Nuclear Information System (INIS)

    Abele, M.

    1983-01-01

    A computerized tomographic scanning apparatus suitable for diagnosis and for improving target identification in stereotactic neurosurgery is described. It consists of a base, a source of penetrating energy, a detector which produces scanning signals and detector positioning means. A frame with top and bottom arms secures the detector and source to the top and bottom arms respectively. A drive mechanism rotates the frame about an axis along which the frame may also be moved. Finally, the detector may be moved relative to the bottom arm in a direction contrary to the rotation of the frame. (U.K.)

  11. Control rod testing apparatus

    International Nuclear Information System (INIS)

    Gaunt, R.R.; Ashman, C.M.

    1987-01-01

    A control rod testing apparatus is described comprising: a first guide means having a vertical cylindrical opening for grossly guiding a control rod; a second guide means having a vertical cylindrical opening for grossly guiding a control rod. The first and second guide means are supported at axially spaced locations with the openings coaxial; and a substantially cylindrical subassembly having a vertical cylindrical opening therethrough. The subassembly is trapped coaxial with and between the first and second guide means, and the subassembly radially floats with respect to the first and second guide means

  12. Apparatus for chemical synthesis

    Science.gov (United States)

    Kong, Peter C [Idaho Falls, ID; Herring, J Stephen [Idaho Falls, ID; Grandy, Jon D [Idaho Falls, ID

    2011-05-10

    A method and apparatus for forming a chemical hydride is described and which includes a pseudo-plasma-electrolysis reactor which is operable to receive a solution capable of forming a chemical hydride and which further includes a cathode and a movable anode, and wherein the anode is moved into and out of fluidic, ohmic electrical contact with the solution capable of forming a chemical hydride and which further, when energized produces an oxygen plasma which facilitates the formation of a chemical hydride in the solution.

  13. The ATHENA Antihydrogen Apparatus

    CERN Document Server

    Amoretti, M; Bonomi, G; Bouchta, A; Bowe, P; Carraro, C; Charlton, M; Collier, M; Doser, Michael; Filippini, V; Fine, K S; Fontana, A; Fujiwara, M C; Funakoshi, R; Genova, P; Glauser, A; Grögler, D; Hangst, Jeffrey S; Hayano, R S; Higaki, H; Holzscheiter, Michael H; Joffrain, W; Jørgensen, L V; Lagomarsino, V; Landua, Rolf; Cesar, C L; Lindelöf, D; Lodi-Rizzini, E; Macri, M; Madsen, N; Manuzio, D; Manuzio, G; Marchesotti, M; Montagna, P; Pruys, H S; Regenfus, C; Riedler, P; Rochet, J; Rotondi, A; Rouleau, G; Testera, G; Van der Werf, D P; Variola, A; Watson, T L; Yamazaki, T; Yamazaki, Y

    2004-01-01

    The ATHENA apparatus that recently produced and detected the first cold antihydrogen atoms is described. Its main features, which are described herein, are: an external positron accumulator, making it possible to accumulate large numbers of positrons; a separate antiproton catching trap, optimizing the catching, colling and handling of antiprotons: a unique high resolution antihydrogen annihilation detector, allowing a clear determination that antihydrogen has been produced; an open, modular design making variations in the experimental approach possible and a "nested" Penning trap situated in a cryogenic, 3T magnetic field environment used for the mixing of the antiprotons and positrons.

  14. Isotope diagnostics apparatus

    International Nuclear Information System (INIS)

    Herrschaft, H.

    1976-01-01

    The invention relates to a measuring probe for an isotope diagnostics apparatus to determine the distribution of radioactive substances in a body by measuring the radiation emanating from this body by means of a multiplicity of measuring probes directed simultaneously towards areas of measuring surfae and carried in guidances of a holding block. The measuring results of the individual probes are recorded separately, thus allowing the possibility of being evaluated separately, too. Measuring probes of this kind are used in multi-channel measuring objects and are useful particularly for determining the regional cerebral blood flow. (orig./ORU) [de

  15. X-ray apparatus

    International Nuclear Information System (INIS)

    Grady, J.K.

    1985-01-01

    X-ray apparatus is described which has a shutter between the X-ray source and the patient. The shutter controls the level of radiation to which the patient is exposed instead of merely discontinuing the electric power supplied to the source. When the shutter is opened a radiation sensor senses the level of X-radiation. When a preset quantity of X-radiation has been measured an exposure control closes the shutter. Instead of using the radiation sensor, the integrated power supplied to the anode of the X-ray source may be measured. (author)

  16. Remote docking apparatus

    International Nuclear Information System (INIS)

    Dent, T.H.; Sumpman, W.C.; Wilhelm, J.J.

    1981-01-01

    The remote docking apparatus comprises a support plate with locking devices mounted thereon. The locking devices are capable of being inserted into tubular members for suspending the support plate therefrom. A vertical member is attached to the support plate with an attachment mechanism attached to the vertical member. A remote access manipulator is capable of being attached to the attachment mechanism so that the vertical member can position the remote access manipulator so that the remote access manipulator can be initially attached to the tubular members in a well defined manner

  17. Continuous microwave regeneration apparatus for absorption media

    Science.gov (United States)

    Smith, Douglas D.

    1999-01-01

    A method and apparatus for continuously drying and regenerating ceramic beads for use in process gas moisture drying operations such as glove boxes. A microwave energy source is coupled to a process chamber to internally heat the ceramic beads and vaporize moisture contained therein. In a preferred embodiment, the moisture laden ceramic beads are conveyed toward the microwave source by a screw mechanism. The regenerated beads flow down outside of the screw mechanism and are available to absorb additional moisture.

  18. He-atom surface scattering apparatus for studies of crystalline surface dynamics. Progress report, May 1, 1985-April 30, 1986

    International Nuclear Information System (INIS)

    1986-01-01

    The primary goal of this grant is the construction of a state-of-the-art He atom-crystal surface scattering apparatus which will be capable of measuring both elastic and inelastic scattering of He atoms from crystal surfaces of metals, semiconductors and insulators. First, the apparatus will be constructed and characterized, after which a program of studies on the surface dynamics of a variety of crystal surfaces will be started. 6 refs., 2 figs

  19. Borehole sealing method and apparatus

    International Nuclear Information System (INIS)

    Hartley, J.N.; Jansen, G. Jr.

    1977-01-01

    A method and apparatus is described for sealing boreholes in the earth. The borehole is blocked at the sealing level, and a sealing apparatus capable of melting rock and earth is positioned in the borehole just above seal level. The apparatus is heated to rock-melting temperature and powdered rock or other sealing material is transported down the borehole to the apparatus where it is melted, pooling on the mechanical block and allowed to cool and solidify, sealing the hole. Any length of the borehole can be sealed by slowly raising the apparatus in the borehole while continuously supplying powdered rock to the apparatus to be melted and added to the top of the column of molten and cooling rock, forming a continuous borehole seal. The sealing apparatus consists of a heater capable of melting rock, including means for supplying power to the heater, means for transporting powdered rock down the borehole to the heater, means for cooling the apparatus and means for positioning the apparatus in the borehole. 5 claims, 1 figure

  20. Apparatus for gamma ray radiography

    International Nuclear Information System (INIS)

    Kobayashi, Masatoshi; Enomoto, Shigemasa; Oga, Hiroshi

    1979-01-01

    This is the standard of Japan Non-Destructive Inspection Society, NDIS 1101-79, which stipulates on the design, construction and testing method of the apparatuses for gamma ray radiography used for taking industrial radiograms. The gamma ray apparatuses stipulated in this standard are those containing sealed radioactive isotopes exceeding 100 μCi, which emit gamma ray. The gamma ray apparatuses are classified into three groups according to their movability. The general design conditions, the irradiation dose rate and the sealed radiation sources for the gamma ray apparatuses are stipulated. The construction of the gamma ray apparatuses must be in accordance with the notification No. 52 of the Ministry of Labor, and safety devices and collimators must be equipped. The main bodies of the gamma ray apparatuses must pass the vibration test, penetration test, impact test and shielding efficiency test. The method of each test is described. The attached equipments must be also tested. The tests according to this standard are carried out by the makers of the apparatuses. The test records must be made when the apparatuses have passed the tests, and the test certificates are attached. The limit of guarantee by the endurance test must be clearly shown. The items to be shown on the apparatuses are stipulated. (Kako, I.)

  1. Industrial science and technology research and development project of university cooperative type in fiscal 2000. Report on achievements in semiconductor device manufacturing processes using Cat-CVD method (Semiconductor device manufacturing processes using Cat-CVD method); 2000 nendo daigaku renkeigata sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (Cat-CVD ho ni yoru handotai device seizo process)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The catalytic chemical vapor deposition (Cat-CVD) method is a low-temperature thin film depositing technology that can achieve improvement in quality of semiconductor thin films and can perform inexpensive film deposition in a large area. The present project is composed of the basic research and development theme and the demonstrative research and development theme for the Cat-CVD method. This report summarizes the achievements in fiscal 2000 centering on the former theme. Discussions were given on the following five areas: 1) simulation on film thickness distribution in the Cat-CVD method, 2) life extension by preventing the catalyst converting into silicide and development of a catalyst integrated shear head, 3) vapor diagnosis in the film forming process by the Cat-CVD method using silane, hydrogen and ammonia, 4) a technology for high-speed deposition of hydrogenated amorphous silicon films for solar cells using the Cat-CVD method, and the low-temperature silicon oxide nitriding technology using heated catalysts, and 5) discussions on compatibility of transparent oxide electrode materials to the process of manufacturing thin-film silicon-based solar cells by using the Cat-CVD method. (NEDO)

  2. Isotope separation apparatus

    International Nuclear Information System (INIS)

    Lyon, R.K.; Eisner, P.N.; Thomas, W.R.I.

    1983-01-01

    This application discloses a method for and an apparatus in which isotopes of an element in a compared are separated from each other while that compound, i.e., including a mixture of such isotopes, flows along a predetermined path. The apparatus includes a flow tube having a beginning and an end. The mixture of isotopes is introduced into the flow tube at a first introduction point between the beginning and the end thereof to flow the mixture toward the end thereof. A laser irradiates the flow tube dissociating compounds of a preselected one of said isotopes thereby converting the mixture in an isotopically selective manner. The dissociation products are removed from the tube at a first removal point between the first introduction point and the end. The dissociation product removed at the the first removal point are reconverted back into the comound thereby providing a first stage enriched compound. This first stage enriched compound is reintroduced into the flow tube at a second introduction point between the beginning thereof and the first introduction point. Further product is removed from the flow tube at a second removal point between the second introduction point and the first introduction point. The second introduction point is chosen so that the isotope composition of the first stage enriched compound is approximately the same as that of the compound in the flow tube

  3. Apparatus for fuel replacement

    International Nuclear Information System (INIS)

    Imada, Takahiko.

    1974-01-01

    Object: To support a telescope mast such that no deforming load is applied to it even during massive vibration, it is held fixed at the time of fuel replacement to permit satisfactory remote control operation by automatic operation. Structure: The body of the fuel replacement apparatus is provided with telescope mast fixing means comprising a slide base supported for reciprocal movement with respect to a telescope mast, an operating arm pivoted at the slide base, a wrist member mounted on the free end of the operating arm and an engagement member for restricting the slide base and operating arm at the time of loading and unloading the fuel. When loading and unloading the fuel, the slide base and operating arm are restrained by the engagement member to reliably restrict the vibration of the telescope mast. When the fuel replacement apparatus is moved, the means provided on the operating arm is smoothly displaced to follow the swing (vibration) of the telescope mast to prevent the deforming load from being applied to the support portion or other areas. The wrist member supports the telescope mast such that it can be rotated while restraining movement in the axial direction, and it is provided with revolution drive means for rotating the telescope mast under remote control. (Kamimura, M.)

  4. Apparatus for gamma radiography

    International Nuclear Information System (INIS)

    1983-06-01

    The aim of the present standard is to fix the rules for the construction of gamma radiography instrumentation without prejudice to the present regulations. These apparatus have to be fitted with only sealed sources conformable to the experimental standard M 61-002. The present standard agrees with the international standard ISO 3999 of 1977 dealing with the same subject. Nevertheless, it is different on the three main following points: it does not accept the same limits of absorbed dose rates in the air calculated on the external surface of projectors; it precribes tightness, bending, crushing and tensile tests for some components of the gamma radiography it prescribes tests of endurance and resistance to breaking for the locking systems of the gamma radiography apparatus. The present standard also specifies the following points: symbols and indications to put on projectors and on the source-holder; identification of the source contained in the projector; and, accompanying documents. The regulation references are given in annexe [fr

  5. Fuel exchanging apparatus

    International Nuclear Information System (INIS)

    Imada, Takahiko; Sato, Hideo.

    1975-01-01

    Object: To provide a centripetal device, which has an initial spring force greater than a frictional force in an oscillating direction of a telescope mast, on a mast fixing device mounted on a body of fuel exchanging apparatus so that the telescope mast may be secured quickly returning to a predetermined initial position. Structure: When the body of fuel exchanging apparatus is stopped at a predetermined position, a tension spring, which has an initial spring force greater than a frictional force in an oscillating direction of the telescope mast, causes a lug to be forced by means of a push rod to position a sliding base plate to its original position. At the same time, a device of similar structure causes an operating arm to be positioned to the original position, and a lock pin urged by a cylinder is inserted into a through hole in the sliding base plate and operating arm so that the telescope mast may be fixed and retained. (Hanada, M.)

  6. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  7. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  8. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  9. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  10. Development of an on-line radon monitoring apparatus and design of the on-line radon monitoring platform based on CAN bus

    International Nuclear Information System (INIS)

    Guo Huiping; Lu Ning; Shang Aiguo; Zhou Chunlin; Chen Yingfen; Yu Hongwei

    2004-12-01

    For actual demand, an idea of 'on-line monitoring' is put forward as a way of radon monitoring, instead of traditional so called 'off-line monitoring'. In this way, the apparatus has some automatic functions such as continuous monitoring, real-time alarm; thereby, there is no need for operators' intervention in each monitoring process. With technique of hardware and software design in automation's field, the authors have successfully developed the prototype and finished the scale of it in a standard radon-chamber. This apparatus is composed of detector part and secondary-instrument. The detector part is made up of a passive diffusion collecting chamber, high voltage static electricity, semiconductor detector, charge-sensitive preamplifier and forming circuit. The secondary-instrument is actually a micro-controller system, which consists of a single-chip micro-controller cored measure-controlling unit, display unit, printing unit and alarming unit. Taking this apparatus as a cell, a 'on-line Radon Monitoring Platform' based on CAN bus has been put forward, which can realize multi-points environmental radioactivity real-time monitoring radioactivity and data process. (authors)

  11. Microelectromechanical acceleration-sensing apparatus

    Science.gov (United States)

    Lee, Robb M [Albuquerque, NM; Shul, Randy J [Albuquerque, NM; Polosky, Marc A [Albuquerque, NM; Hoke, Darren A [Albuquerque, NM; Vernon, George E [Rio Rancho, NM

    2006-12-12

    An acceleration-sensing apparatus is disclosed which includes a moveable shuttle (i.e. a suspended mass) and a latch for capturing and holding the shuttle when an acceleration event is sensed above a predetermined threshold level. The acceleration-sensing apparatus provides a switch closure upon sensing the acceleration event and remains latched in place thereafter. Examples of the acceleration-sensing apparatus are provided which are responsive to an acceleration component in a single direction (i.e. a single-sided device) or to two oppositely-directed acceleration components (i.e. a dual-sided device). A two-stage acceleration-sensing apparatus is also disclosed which can sense two acceleration events separated in time. The acceleration-sensing apparatus of the present invention has applications, for example, in an automotive airbag deployment system.

  12. Technology of substrates for molecular beam homo epitaxy of wide - gap AII-BVI semiconductors and construction of a simplified setup for this process

    International Nuclear Information System (INIS)

    Mycielski, A.; Szadkowski, A.; Kaliszek, W.

    2000-01-01

    The technology of 'epi-ready' substrate plates (for MBE) of the wide gap AII-BVI semiconductor compounds, i. e. - preparation of the ultra pure elements, synthesis of the source material, crystallization by the physical vapour transport technique, cutting of the oriented plates, mechano-chemical polishing and preparation of the 'epi-ready' surface - is described, as well as the construction of a simplified version of the MBE setup for covering the substrate plates with the homoepitaxial layer. The results of the characterization of the substrate crystals and plates are presented. (author)

  13. Hyperentangled photon sources in semiconductor waveguides

    DEFF Research Database (Denmark)

    Kang, Dongpeng; Helt, L. G.; Zhukovsky, Sergei

    2014-01-01

    We propose and analyze the performance of a technique to generate mode and polarization hyperentangled photons in monolithic semiconductor waveguides using two concurrent type-II spontaneous parametric down-conversion (SPDC) processes. These two SPDC processes are achieved by waveguide engineering...

  14. Si-semiconductor device failure mechanisms

    International Nuclear Information System (INIS)

    Clauss, H.

    1976-12-01

    This report presents investigations on failure mechanisms that may cause defects during production and operation of silicon semiconductor devices. The failure analysis of aluminium metallization defects covers topics such as step coverage, dissolution pits and electromigration. Furthermore, the generation of process induced lattice defects was investigated. Improved processes avoiding those defects were developed. (orig.) [de

  15. Nuclear reactor control apparatus

    International Nuclear Information System (INIS)

    Sridhar, B.N.

    1983-01-01

    Nuclear reactor safety rod release apparatus comprises a ring which carries detents normally positioned in an annular recess in outer side of the rod, the ring being held against the lower end of a drive shaft by magnetic force exerted by a solenoid carried by the drive shaft. When the solenoid is de-energized, the detent-carrying ring drops until the detents contact a cam surface associated with the lower end of the drive shaft, at which point the detents are cammed out of the recess in the safety rod to release the rod from the drive shaft. In preferred embodiments of the invention, an additional latch is provided to release a lower portion of a safety rod under conditions that may interfere with movement of the entire rod

  16. Multichannel Thomson scattering apparatus

    International Nuclear Information System (INIS)

    Bretz, N.; Dimock, D.; Foote, V.; Johnson, D.; Long, D.; Tolnas, E.

    1977-07-01

    A Thomson scattering apparatus for measuring the electron temperature and density along a 90 cm diameter of the PLT plasma has been built. A wide angle objective images the 3 mm x 900 mm ruby laser beam onto an image dissector which rearranges the 300 : 1 image to 20 : 1 forming the input slit of a spectrometer. The stigmatic spectrometer provides 20 wavelength elements of approximately 70 A each. A micro-channel-plate image intensifier optically coupled to a cooled SIT tube provides detection with single frame linearity and 1000 : 1 dynamic range. Spatial profiles of N/sub e/ and T/sub e/ in the range 10 13 - 10 14 cm -3 and 0.05 - 3 keV have an accuracy of 30 √10 13 /N/sub e/ (cm -3 ) percent per 1.2 cm element

  17. Apparatus for stereotactic surgery

    International Nuclear Information System (INIS)

    Koslow, M.A.M.

    1982-01-01

    Apparatus for stereotactic surgery consisting of a probe and a computerized tomographic scanning system is described. The scanning system comprises a display and means for reconstructing cross-sectional images on the display using data from partial circumferential scans of source and detectors. It operates on the data with an algorithm that provides the difference between the local values of the linear attenuation coefficient and average of these values within a circle centered at each reconstruction point. The scanning system includes a means of maintaining the frames of reference of the probe and scanning system rigid with respect to one another. The position of the probe, which may be a cryogenic probe, with respect to the actual anatomical structure of the body, particularly a human head, may thus be viewed by the surgeon. (author)

  18. Radiation imaging apparatus

    International Nuclear Information System (INIS)

    Cooperstein, G.; Lanza, R.C.; Sohval, A.R.

    1980-01-01

    Radiation imaging apparatus especially suited for use in a computerized tomographic (CT) scanner is specified. It employs a fixed array of discrete X-ray sources, each being a cold cathode diode having an impedance in excess of about 100 ohms and an adjacent fixed array of closely packed radiation detectors to produce images of rapidly moving body organs such as the beating heart. The X-ray source is pulsed by a 120 to 130 kv pulse of 150 to 160 ns duration, derived from an unregulated DC source, of output voltage 15 to 30 kv. Each X-ray source may comprise a cold cathode pulse or may be constituted by a pair of annular cathodes having radially extending anodes therebetween. (author)

  19. Radiation measuring apparatus

    International Nuclear Information System (INIS)

    Schmid, C.J.

    1983-01-01

    A colorimeter in which a light source, a collimating lens and a band pass filter are supported by a housing that is movable with respect to a stationary beam dividing assembly in a direction at least substantially transverse to the optical axis of the light from the source. The assembly separates the incoming collimated and filtered light into a sample beam and a reference beam which are directed back toward the housing in directions parallel to the optical axis. The movement of the housing toward or away from the sample produces an increase or decrease in the intensity of the light illuminating the sample and a corresponding decrease or increase in the intensity of the light at the reference detector. The arrangement is such that the apparatus may be readily adjusted to obtain accurate colorimeter readings even for samples having abnormally high or low density characteristics

  20. Apparatus for extracting petroleum

    Energy Technology Data Exchange (ETDEWEB)

    Coogan, J

    1921-01-18

    An apparatus for extracting petroleum from petroleum bearing sand or shale is described comprising a container for liquids, the container being divided into a plurality of compartments, an agitator mounted within the container and below the liquid level and having its forward end opening into one of the compartments, means for delivering sand or shale to the forward end of the agitator, means for subjecting the sand or shale to the action of a solvent for the petroleum while the sand or shale is being agitated and is submerged, the first-mentioned compartment being adapted to receive the extracted petroleum and means for removing the treated sand or shale from adjacent the rear end of the agitator.

  1. Radiation shielding apparatus

    International Nuclear Information System (INIS)

    McCullagh, R.J.

    1977-01-01

    The disclosure pertains to a clamping apparatus having a stud capturing portion and a stud facing portion bolted together so as to compressively support a radiation-proof sheet material, such as lead sheeting, there-in-between. The interior wall covering material, such as panelling or wall board, is secured to the external surface of the stud facing portion. No nails are required to support the radiation-proof sheeting material, thereby minimizing accidental leakage due to harmful radiation passing through openings inadvertently disposed in the radiation-proof sheeting in the conventional nail securing supporting thereof. A pair of radiation-proof tracks capture the free ends of the stud capturing portion and the stud facing portion

  2. Capacitive gauging apparatus

    International Nuclear Information System (INIS)

    Walton, H.

    1985-01-01

    Apparatus for gauging physical dimensions of solid or tubular bodies (e.g. a nuclear fuel pellet) comprises a capacitive transducer having electrodes forming diametrically arranged pairs of capacitors and means for connecting the pairs, preferably sequentially, in an arm of a four arm electrical network. For circumferential scanning of a solid body along its length, the body is moved along a path of travel through head assembly including the transducer by means of plungers with the axis of the body being coincident with the axis of the transducer. As the body moves through the transducer the diametrically arranged pairs of capacitors scan the surface to result in a surface profile of the body. For scanning the bore of a pipe or tube the transducer is inserted as a probe and moved along the bore of the pipe or tube, means being provided for maintaining the probe coaxial with the pipe or tube. (author)

  3. Nuclear fusion apparatus

    International Nuclear Information System (INIS)

    Takizawa, Teruhiro.

    1975-01-01

    Object: To provide a nuclear fusion apparatus which can make a disorderly magnetic field due to shell current as small as possible, thereby enhancing efficiency. Structure: On each divided end of each shell is integrally projected an auxiliary shell which has thick greater than the other portion of shell. These auxiliary shells are made of a material of high electric conductivity, and the shape of the auxiliary shells may properly be selected so that electric resistance of the auxiliary shell at the divided end of the shell to the shell current may be made smaller than the electric resistance of intermediate of the shell to the shell current. With this, the shell current is concentrated on the auxiliary shell at the divided end of the shell to form an adjacent reciprocating current between it and the shell current opposite the auxiliary shell, thus reducing the disorderly magnetic field. (Yoshihara, H.)

  4. Reactor head shielding apparatus

    International Nuclear Information System (INIS)

    Schukei, G.E.; Roebelen, G.J.

    1992-01-01

    This patent describes a nuclear reactor head shielding apparatus for mounting on spaced reactor head lifting members radially inwardly of the head bolts. It comprises a frame of sections for mounting on the lifting members and extending around the top central area of the head, mounting means for so mounting the frame sections, including downwardly projecting members on the frame sections and complementary upwardly open recessed members for fastening to the lifting members for receiving the downwardly projecting members when the frame sections are lowered thereto with lead shielding supported thereby on means for hanging lead shielding on the frame to minimize radiation exposure or personnel working with the head bolts or in the vicinity thereof

  5. Foil changing apparatus

    International Nuclear Information System (INIS)

    Crist, C.E.; Ives, H.C.; Leifeste, G.T.; Miller, R.B.

    1988-01-01

    A self-contained foil changer apparatus for replenishing foil material across the path of a high energy particle beam is described comprising: a cylindrical hermetically sealed housing comprising an end plate having an aperture defining a beam passageway therethrough; foil supply means disposed inside the housing for storing a foil web and supporting a portion of the web across the beam passageway to form a plane perpendicular to the beam path; a barrel assembly disposed inside the housing; web control means extending through the housing and operably connected to the foil supply means for selectively advancing the foil web to replenish a portion across the beam passageway; and barrel control means extending through the housing and operably connected to the barrel assembly for selectively moving the barrel to and from the advanced and retracted positions

  6. Spine immobilization apparatus

    Science.gov (United States)

    Lambson, K. H.; Vykukal, H. C. (Inventor)

    1981-01-01

    The apparatus makes use of a normally flat, flexible bladder filled with beads or micro-balloons that form a rigid mass when the pressure within the bladder is decreased below ambient through the use of a suction pump so that the bladder can be conformed to the torso of the victim and provide the desired restraint. The bladder is strapped to the victim prior to being rigidified by an arrangement of straps which avoid the stomach area. The bladder is adapted to be secured to a rigid support, i.e., a rescue chair, so as to enable removal of a victim after the bladder has been made rigid. A double sealing connector is used to connect the bladder to the suction pump and a control valve is employed to vary the pressure within the bladder so as to soften and harden the bladder as desired.

  7. Apparatus for proton radiography

    International Nuclear Information System (INIS)

    Martin, R.L.

    1976-01-01

    An apparatus for effecting diagnostic proton radiography of patients in hospitals comprises a source of negative hydrogen ions, a synchrotron for accelerating the negative hydrogen ions to a predetermined energy, a plurality of stations for stripping extraction of a radiography beam of protons, means for sweeping the extracted beam to cover a target, and means for measuring the residual range, residual energy, or percentage transmission of protons that pass through the target. The combination of information identifying the position of the beam with information about particles traversing the subject and the back absorber is performed with the aid of a computer to provide a proton radiograph of the subject. In an alternate embodiment of the invention, a back absorber comprises a plurality of scintillators which are coupled to detectors. 10 claims, 7 drawing figures

  8. Induction melter apparatus

    Science.gov (United States)

    Roach, Jay A [Idaho Falls, ID; Richardson, John G [Idaho Falls, ID; Raivo, Brian D [Idaho Falls, ID; Soelberg, Nicholas R [Idaho Falls, ID

    2008-06-17

    Apparatus and methods of operation are provided for a cold-crucible-induction melter for vitrifying waste wherein a single induction power supply may be used to effect a selected thermal distribution by independently energizing at least two inductors. Also, a bottom drain assembly may be heated by an inductor and may include an electrically resistive heater. The bottom drain assembly may be cooled to solidify molten material passing therethrough to prevent discharge of molten material therefrom. Configurations are provided wherein the induction flux skin depth substantially corresponds with the central longitudinal axis of the crucible. Further, the drain tube may be positioned within the induction flux skin depth in relation to material within the crucible or may be substantially aligned with a direction of flow of molten material within the crucible. An improved head design including four shells forming thermal radiation shields and at least two gas-cooled plenums is also disclosed.

  9. Controlling Molecular Doping in Organic Semiconductors.

    Science.gov (United States)

    Jacobs, Ian E; Moulé, Adam J

    2017-11-01

    The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Reduced filamentation in high power semiconductor lasers

    DEFF Research Database (Denmark)

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

    1999-01-01

    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

  11. AC low-pressure plasmas generated by using annular-shaped electrodes for abatement of pollutants emitted during semiconductor manufacturing processes

    International Nuclear Information System (INIS)

    Hur, Min; Lee, Jae Ok; Song, Young Hoon

    2011-01-01

    A plasma abatement system operating at low pressures is set up with the aim of treating pollutants emitted by the semiconductor industry. The abatement device is characterized by using a tube-shaped reactor design and a bipolar alternating current, which allows an easy connection to pre-existing pipelines in the semiconductor industry and low installation cost, respectively. By using optical emission spectroscopy (OES) and Fourier transform infrared spectroscopy (FTIR), we analyzed the discharge characteristics and abatement efficiency with emphasis on the working pressure effect. In the case of CF 4 , the destruction and removal efficiency (DRE) is greatly reduced with increasing pressure. However, the pressure has a relatively small influence on the DRE for tetrakis(ethylmethylamino)zirconium (TEMAZ), which is significantly destroyed only with several hundred watts and without any liquefied byproducts. This difference is closely related to the spatial distribution of reactive species and to the chemical bond strengths of the pollutant's components. Finally, the applicability of the abatement device is discussed based on the experimental results.

  12. The development and application of a coincidence measurement apparatus with micro-computer system

    International Nuclear Information System (INIS)

    Du Hongshan; Zhou Youpu; Gao Junlin; Qin Deming; Cao Yunzheng; Zhao Shiping

    1987-01-01

    A coincidence measurement apparatus with micro-computer system is developed. Automatic data acquisition and processing are achieved. Results of its application for radioactive measurement are satisfactory

  13. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  14. Method and apparatus of prefetching streams of varying prefetch depth

    Science.gov (United States)

    Gara, Alan [Mount Kisco, NY; Ohmacht, Martin [Yorktown Heights, NY; Salapura, Valentina [Chappaqua, NY; Sugavanam, Krishnan [Mahopac, NY; Hoenicke, Dirk [Seebruck-Seeon, DE

    2012-01-24

    Method and apparatus of prefetching streams of varying prefetch depth dynamically changes the depth of prefetching so that the number of multiple streams as well as the hit rate of a single stream are optimized. The method and apparatus in one aspect monitor a plurality of load requests from a processing unit for data in a prefetch buffer, determine an access pattern associated with the plurality of load requests and adjust a prefetch depth according to the access pattern.

  15. REDUCTION OF ARSENIC WASTES IN THE SEMICONDUCTOR INDUSTRY

    Science.gov (United States)

    The research described in this report was aimed at initiating and developing processes and process modifications that could be incorporated into semiconductor manufacturing operations to accomplish pollution prevention, especially to accomplish significant reduction in the quanti...

  16. Small-polaron formation and motion in magnetic semiconductors

    International Nuclear Information System (INIS)

    Emin, D.

    1979-01-01

    The fundamental physical processes associated with small-polaron formation are described with various magnetic semi-conductors being cited as examples. Attention is then directed toward the mechanisms of charge transfer and small-polaron hopping motion in magnetic semiconductors

  17. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  18. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  19. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  20. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  1. Method and apparatus for real-time measurement of fuel gas compositions and heating values

    Science.gov (United States)

    Zelepouga, Serguei; Pratapas, John M.; Saveliev, Alexei V.; Jangale, Vilas V.

    2016-03-22

    An exemplary embodiment can be an apparatus for real-time, in situ measurement of gas compositions and heating values. The apparatus includes a near infrared sensor for measuring concentrations of hydrocarbons and carbon dioxide, a mid infrared sensor for measuring concentrations of carbon monoxide and a semiconductor based sensor for measuring concentrations of hydrogen gas. A data processor having a computer program for reducing the effects of cross-sensitivities of the sensors to components other than target components of the sensors is also included. Also provided are corresponding or associated methods for real-time, in situ determination of a composition and heating value of a fuel gas.

  2. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  3. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  4. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  5. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  6. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  7. Ultrafast laser-semiconductor interactions

    International Nuclear Information System (INIS)

    Schile, L.A.

    1996-01-01

    Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

  8. Thin film transistor performance of amorphous indium–zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol–gel processing

    Science.gov (United States)

    Kodzasa, Takehito; Nobeshima, Taiki; Kuribara, Kazunori; Yoshida, Manabu

    2018-05-01

    We have fabricated an amorphous indium–zinc oxide (IZO, In/Zn = 3/1) semiconductor thin-film transistor (AOS-TFT) by the sol–gel technique using ultraviolet (UV) photoirradiation and post-treatment in high-pressure O2 at 200 °C. The obtained TFT showed a hole carrier mobility of 0.02 cm2 V‑1 s‑1 and an on/off current ratio of 106. UV photoirradiation leads to the decomposition of the organic agents and hydroxide group in the IZO gel film. Furthermore, the post-treatment annealing at a high O2 pressure of more than 0.6 MPa leads to the filling of the oxygen vacancies in a poor metal–oxygen network in the IZO film.

  9. Apparatus-Program Complexes Processing and Creation of Essentially non-Format Documents on the Basis of Technology Auto-Adaptive Fonts

    Directory of Open Access Journals (Sweden)

    E. G. Andrianova

    2014-01-01

    Full Text Available The need to translate paper documents into electronic form demanded a development of methods and algorithms for automatic processing systems and web publishing unformatted graphic documents of on-line libraries. Translation of scanned images into modern formats of electronic documents using OCR programmes faces serious difficulties. These difficulties are connected with the standardization set of fonts and design of printed documents. There is also a need to maintain the original form of electronic format of such documents. The article discusses the possibility for building an extensible adaptive dictionary of graphic objects, which constitute unformatted graphics documents. Dictionary automatically adjusted as graphics processing and accumulation of statistical information for each new document. This adaptive extensible dictionary of graphic letters, fonts, and other objects of automated particular document processing is called "auto-adaptive font", and a set of its application methods is named "auto-adaptive font technology."Based on the theory of estimation algorithms, a mathematical model is designed. It allows us to represent all objects of unformatted graphic document in a unified manner to build a feature vector for each object, and evaluate a similarity of these objects in the selected metric. The algorithm of the adaptive models of graphic images is developed and a criterion for combining similar properties in one element to build an auto-adaptive font is offered thus allowing us to build a software core of hardware-software complex for processing the unformatted graphic documents. A standard block diagram of hardware-software complex is developed to process the unformatted graphic documents. The article presents a description of all the blocks of this complex, including document processing station and its interaction with the web server of publishing electronic documents.

  10. Apparatus for measuring a concentration of radioactivity

    International Nuclear Information System (INIS)

    Tabuchi, H.; Ogushi, A.

    1978-01-01

    Disclosed is an apparatus for measuring concentration of radioactivity in a fluid circulating in a cooling system or a disposal system, etc., of a nuclear power plant (e.g. coolant), the apparatus having a plurality of sampling tubes with different diameters depending on the intensities of radioactivity, and the sampling tubes having valves for switching from one fluid to another fluid. The sampling tubes are connected to the system to a discharge pipe, and are disposed in the proximity of a radiation detector adapted to issue a signal representative of radiation. The issued signal is supplied to a multichannel pulse height analyzer and a data processing system providing an indication of the concentrations of radioactivities for respective radionuclides

  11. Data structures and apparatuses for representing knowledge

    Science.gov (United States)

    Hohimer, Ryan E; Thomson, Judi R; Harvey, William J; Paulson, Patrick R; Whiting, Mark A; Tratz, Stephen C; Chappell, Alan R; Butner, Robert S

    2014-02-18

    Data structures and apparatuses to represent knowledge are disclosed. The processes can comprise labeling elements in a knowledge signature according to concepts in an ontology and populating the elements with confidence values. The data structures can comprise knowledge signatures stored on computer-readable media. The knowledge signatures comprise a matrix structure having elements labeled according to concepts in an ontology, wherein the value of the element represents a confidence that the concept is present in an information space. The apparatus can comprise a knowledge representation unit having at least one ontology stored on a computer-readable medium, at least one data-receiving device, and a processor configured to generate knowledge signatures by comparing datasets obtained by the data-receiving devices to the ontologies.

  12. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  13. Submersible energy storage apparatus

    International Nuclear Information System (INIS)

    Mccartney, J.F.; Rowe, R.A.

    1980-01-01

    A submersible energy storage apparatus for an electrical power source is provided which includes an electrolysis unit feed water gas collection assembly and a fuel cell. The electrolysis unit feed water gas collection assembly includes a hydrogen container and an oxygen container wherein each container has a gas outlet and is capable of containing feed water as well as hydrogen and oxygen gases respectively. An electrolysis cell is provided which has a hydrogen outlet, an oxygen outlet and a feed water inlet. The hydrogen outlet is located in the hydrogen container, the oxygen outlet is located in the oxygen container, and the feed water inlet is located in one of the containers. Each of the containers has an opening to the submersible environment so as to be pressure responsive thereto. A barrier device is provided in association with the opening in each container for isolating the feed water in the container from water in the submersible environment. The fuel cell is operatively connected to the hydrogen and oxygen containers, and the electrical power source is operatively connected to the electrolysis cell. With this arrangement the electrolysis cell is capable of utilizing power from the power source during low electrical energy demand, and the fuel cell is capable of utilizing the hydrogen and oxygen gases for generating electricity during high demand periods

  14. Belt conveyor apparatus

    Science.gov (United States)

    Oakley, David J.; Bogart, Rex L.

    1987-01-01

    A belt conveyor apparatus according to this invention defines a conveyance path including a first pulley and at least a second pulley. An endless belt member is adapted for continuous travel about the pulleys and comprises a lower portion which engages the pulleys and an integral upper portion adapted to receive objects therein at a first location on said conveyance path and transport the objects to a second location for discharge. The upper belt portion includes an opposed pair of longitudinally disposed crest-like members, biased towards each other in a substantially abutting relationship. The crest-like members define therebetween a continuous, normally biased closed, channel along the upper belt portion. Means are disposed at the first and second locations and operatively associated with the belt member for urging the normally biased together crest-like members apart in order to provide access to the continuous channel whereby objects can be received into, or discharged from the channel. Motors are in communication with the conveyance path for effecting the travel of the endless belt member about the conveyance path. The conveyance path can be configured to include travel through two or more elevations and one or more directional changes in order to convey objects above, below and/or around existing structures.

  15. Nuclear fusion apparatus

    International Nuclear Information System (INIS)

    Nagata, Daizaburo; Yamada, Masao.

    1974-01-01

    Object: To provide a nuclear fusion apparatus in which a magnetic limiter is disposed within a vacuum vessel, said magnetic limiter being supported in such a manner so as to not to exert mechanical action upon said vacuum vessel, thereby minimizing a force applied to the vacuum vessel to easily manufacture the vacuum vessel. Structure: The magnetic limiter disposed within the vacuum vessel is connected to one end of a supporting post which extends through the wall of the vacuum vessel through a seal portion, the other end of the supporting post being secured to a structure such as a house outside the vacuum vessel. The seal portion comprises a bellows of high spring elasticity mounted on the vacuum vessel and a seal element comprised of an electric insulator such as ceramic for connecting the bellows to the supporting post, the supporting post extending through the wall of the vacuum vessel in vacuum-tight fashion, the force applied to the magnetic limiter exerting no influence upon the vacuum vessel. (Kamimura, M.)

  16. Computed tomography apparatus

    International Nuclear Information System (INIS)

    Fairbairn, I.A.

    1984-01-01

    In fan-beam computed tomography apparatus, timing reference pulses, normally occurring at intervals t, for data transfer and reset of approx. 500 integrators in the signal path from the detector array, are generated from the scan displacement, e.g. using a graticule and optical sensor to relate the measurement paths geometrically to the body section. Sometimes, a slow scan rate is required to provide a time-averaged density image, e.g. for planning irradiation therapy, and then the sensed impulses will occur at extended intervals and can cause integrator overload. An improvement is described which provides a pulse generator which responds to a reduced scan rate by generating a succession of further transfer and reset pulses at intervals approximately equal to t starting a time t after each timing reference pulse. Then, using an adding device and RAM, all the transferred signals integrated in the interval t' between two successive slow scan reference pulses are accumulated in order to form a corresponding measurement signal. (author)

  17. Apparatus for diffusion separation

    International Nuclear Information System (INIS)

    Nierenberg, W.A.

    1976-01-01

    A diffuser separator apparatus is described which comprises a plurality of flow channels in a single stage. Each of said channels has an inlet port and an outlet port and a constant cross sectional area between said ports. At least a portion of the defining surface of each of said channels is a diffusion separation membrane, and each of said channels is a different cross sectional area. Means are provided for connecting said channels in series so that each successive channel of said series has a smaller cross sectional area than the previous channel of said series. Also provided are a source of gaseous mixture, individual means for flowing said gaseous mixture to the inlet port of each of said channels, gas receiving and analyzing means, individual means for flowing gas passing from each of said outlet ports and means for flowing gas passing through said membranes to said receiving and analyzing means, and individual means for connecting the outlet port of each channel with the inlet port of the channel having the next smaller cross sectional area

  18. Plastic waste disposal apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Kito, S

    1972-05-01

    A test plant plastic incinerator was constructed by the Takuma Boiler Manufacturing Co. for Sekisui Chemical Industries, and the use of a continuous feed spreader was found to be most effective for prevention of black smoke, and the use of a venturi scrubber proved to be effective for elimination of hydrogen chloride gas. The incinerator was designed for combustion of polyvinyl chloride exclusively, but it is also applicable for combustion of other plastics. When burning polyethylene, polypropylene, or polystyrene, (those plastics which do not produce toxic gases), the incinerator requires no scrubber for the combustion gas. The system may or may not have a pretreatment apparatus. For an incinerator with a pretreatment system, the flow chart comprises a pit, a supply crane, a vibration feeder, a metal eliminator, a rotation shredder, a continuous screw feeder with a quantitative supply hopper, a pretreatment chamber (300 C dry distillation), a quantitative supply hopper, and the incinerator. The incinerator is a flat non-grid type combustion chamber with an oil burner and many air nozzles. From the incinerator, ashes are sent by an ash conveyor to an ash bunker. The combustion gas goes to the boiler, and the water supplied the boiler water pump creates steam. The heat from the gas is sent back to the pretreatment system through a heat exchanger. The gas then goes to a venturi scrubber and goes out from a stack.

  19. Radiographic examination apparatus

    International Nuclear Information System (INIS)

    Beetham, S.; Hogg, J.

    1983-01-01

    Tube examination apparatus has a head actuated by fluid pressure, for centralising a radioactive source. Preferably the source is shielded during transport from its storage unit to the head. A body attached to a drive-wire has hollow shield-parts which define a radiation window therebetween, and closure shield-parts which have the source located therebetween and which are a sliding fit. A spring biases the closure shields towards a first position relative to the body in which the source is enclosed. When the body moves along a guide in the head, the closure shield engages an abutment surface which arrests the closure shields. Further movement of the body to engage an abutment surface causes relative movement between the shield parts to a second position relative to the body in which the source is exposed at the window. Retraction of the body along the guide allows the spring to restore the closure shield parts to the first position. (U.K.)

  20. Sample-taking apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Tanov, Y I; Ismailov, R A; Orazov, A

    1980-10-07

    The invention refers to the equipment for testing water-bearing levels in loose rocks. Its purpose is to simultaneously remove with the rock sample a separate fluid sample from the assigned interval. The sample-taking apparatus contains a core lifter which can be submerged into the casting string with housing and front endpiece in the form of a rod with a piston which covers the cavity of the core lifter, as well as mechanism for fixing and moving the endpiece within the core lifter cavity. The device differs from the known similar devices because the upper part of the housing of the core lifter is equipped with a filter and mobile casting which covers the filter. In this case the casing is connected to the endpiece rod and the endpiece is installed with the possibility of movement which is limited with fixing in the upper position and in the extreme upper position it divides the core lifter cavity into two parts, filter settling tank and core-receiving cavity.