Optical Orientation in Ferromagnet/Semiconductor Hybrids

OpenAIRE

Korenev, V. L.

2008-01-01

The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

Ring cavity surface emitting semiconductor lasers

International Nuclear Information System (INIS)

Mujagic, E.

2010-01-01

Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93 �

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

Instability of stationary lasing and self-starting mode locking in external-cavity semiconductor lasers

International Nuclear Information System (INIS)

Smetanin, Igor V; Vasil'ev, Petr P

2009-01-01

Parameters of external-cavity semiconductor lasers, when the stationary lasing becomes unstable, were analysed within the framework of a theoretical model of self-starting mode locking. In this case, a train of ultrashort pulses can be generated due to intrinsic nonlinearities of the laser medium. A decisive role of the transverse optical field nonuniformity, pump rate, and gain spectral bandwidth in the development of the instability of stationary lasing was demonstrated. (control of laser radiation parameters)

Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

Energy Technology Data Exchange (ETDEWEB)

Villas-Boas, Jose M. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica; Laucht, Arne; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Technische Universitaet Muenchen, Garching (Germany). Walter Schottky Inst.

2011-07-01

Full text. We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nano cavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nano cavity mode. Photoluminescence measurements show a characteristic triple peak during the double anti crossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced

Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

International Nuclear Information System (INIS)

Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

1999-01-01

Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

Tuned optical cavity magnetometer

Science.gov (United States)

Okandan, Murat; Schwindt, Peter

2010-11-02

An atomic magnetometer is disclosed which utilizes an optical cavity formed from a grating and a mirror, with a vapor cell containing an alkali metal vapor located inside the optical cavity. Lasers are used to magnetically polarize the alkali metal vapor and to probe the vapor and generate a diffracted laser beam which can be used to sense a magnetic field. Electrostatic actuators can be used in the magnetometer for positioning of the mirror, or for modulation thereof. Another optical cavity can also be formed from the mirror and a second grating for sensing, adjusting, or stabilizing the position of the mirror.

Crystallization of Organic Semiconductor Molecules in Nanosized Cavities

DEFF Research Database (Denmark)

Milita, Silvia; Dionigi, Chiara; Borgatti, Francesco

2008-01-01

The crystallization of an organic semiconductor, viz., tetrahexil-sexithiophene (H4T6) molecules, confined into nanosized cavities of a self-organized polystyrene beads template, has been investigated by means of in situ grazing incidence X-ray diffraction measurements, during the solvent evapora...

Modeling of semiconductor optical amplifiers

DEFF Research Database (Denmark)

Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

Semiconductor Optics

CERN Document Server

Klingshirn, Claus F

2012-01-01

This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

Strong Exciton-photon Coupling in Semiconductor Microcavities

DEFF Research Database (Denmark)

Jensen, Jacob Riis; Borri, Paola; Hvam, Jørn Märcher

1999-01-01

The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high directiona......The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high......-optical switches based on semiconductor microcavities....

Controlling spontaneous emission dynamics in semiconductor micro cavities

Science.gov (United States)

Gayral, B.

Spontaneous emission of light can be controlled, cavity quantum electrodynamics tells us, and many experiments in atomic physics demonstrated this fact. In particular, coupling an emitter to a resonant photon mode of a cavity can enhance its spontaneous emission rate: this is the so-called Purcell effect. Though appealing it might seem to implement these concepts for the benefit of light-emitting semiconductor devices, great care has to be taken as to which emitter/cavity system should be used. Semiconductor quantum boxes prove to be good candidates for witnessing the Purcell effect. Also, low volume cavities having a high optical quality in other words a long photon storage time are required. State-of-the-art fabrication techniques of such cavities are presented and discussed.We demonstrate spontaneous emission rate enhancement for InAs/GaAs quantum boxes in time-resolved and continuous-wave photoluminescence experiments. This is done for two kinds of cavities, namely GaAs/AlAs micropillars (global enhancement by a factor of 5), and GaAs microdisks (global enhancement by a factor of 20). Prospects for lasers, light-emitting diodes and single photon sources based on the Purcell effect are discussed. L'émission spontanée de lumière peut être contrôlée, ainsi que nous l'enseigne l'électrodynamique quantique en cavité, ce fait a été démontré expérimentalement en physique atomique. En particulier, coupler un émetteur à un mode photonique résonnant d'une cavité peut exalter son taux d'émission spontanée : c'est l'effet Purcell. Bien qu'il semble très prometteur de mettre en pratique ces concepts pour améliorer les dispositifs semi-conducteurs émetteurs de lumière, le choix du système émetteur/cavité est crucial. Nous montrons que les boîtes quantiques semi-conductrices sont des bons candidats pour observer l'effet Purcell. Il faut par ailleurs des cavités de faible volume ayant une grande qualité optique en d'autres mots un long temps de

Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

Science.gov (United States)

Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

2018-02-01

We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

Degradation of Side-Mode Suppression Ratio in a DFB Laser Integrated With a Semiconductor Optical Amplifier

DEFF Research Database (Denmark)

Champagne, A.; Lestrade, Michel; Camel, Jérôme

2004-01-01

The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in the case of a perfectly antireflection-coated SO...

Terahertz Nonlinear Optics in Semiconductors

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

2013-01-01

We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

International Nuclear Information System (INIS)

Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S

2012-01-01

The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

Non-markovian effects in semiconductor cavity QED: Role of phonon-mediated processes

DEFF Research Database (Denmark)

Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter

We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from the pola......We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from...... the polaritonic quasi-particle nature of the carrier-photon system interacting with the phonon reservoir....

Crisis route to chaos in semiconductor lasers subjected to external optical feedback

Science.gov (United States)

Wishon, Michael J.; Locquet, Alexandre; Chang, C. Y.; Choi, D.; Citrin, D. S.

2018-03-01

Semiconductor lasers subjected to optical feedback have been intensively used as archetypical testbeds for high-speed (sub-ns) and high-dimensional nonlinear dynamics. By simultaneously extracting all the dynamical variables, we demonstrate that for larger current, the commonly named "quasiperiodic" route is in fact based on mixed external-cavity solutions that lock the oscillation frequency of the intensity, voltage, and separation in optical frequency through a mechanism involving successive rejections along the unstable manifold of an antimode. We show that chaos emerges from a crisis resulting from the inability to maintain locking as the unstable manifold becomes inaccessible.

Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

International Nuclear Information System (INIS)

Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

2014-01-01

In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30–70 mA. In addition, the output stabilities of the power and wavelength are also discussed. (paper)

Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

Science.gov (United States)

Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

2014-05-01

In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30-70 mA. In addition, the output stabilities of the power and wavelength are also discussed.

Harnessing the mode mixing in optical fiber-tip cavities

International Nuclear Information System (INIS)

Podoliak, Nina; Horak, Peter; Takahashi, Hiroki; Keller, Matthias

2017-01-01

We present a systematic numerical study of Fabry–Pérot optical cavities with Gaussian-shape mirrors formed between tips of optical fibers. Such cavities can be fabricated by laser machining of fiber tips and are promising systems for achieving strong coupling between atomic particles and an optical field as required for quantum information applications. Using a mode mixing matrix method, we analyze the cavity optical eigenmodes and corresponding losses depending on a range of cavity-shape parameters, such as mirror radius of curvature, indentation depth and cavity length. The Gaussian shape of the mirrors causes mixing of optical modes in the cavity. We investigate the effect of the mode mixing on the coherent atom-cavity coupling as well as the mode matching between the cavity and a single-mode optical fiber. While the mode mixing is associated with increased cavity losses, it can also lead to an enhancement of the local optical field. We demonstrate that around the resonance between the fundamental and 2nd order Laguerre–Gaussian modes of the cavity it is possible to obtain 50% enhancement of the atom-cavity coupling at the cavity center while still maintaining low cavity losses and high cavity-fiber optical coupling. (paper)

Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

Energy Technology Data Exchange (ETDEWEB)

Laucht, Arne; Villas-Boas, Jose M.; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)

2010-07-01

We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nanocavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nanocavity mode. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced.

Optical properties of semiconductors quantum microcavity structures

International Nuclear Information System (INIS)

Afshar, A.M.

1996-12-01

The principal phenomenon investigated in this thesis is vacuum Rabi coupling in semiconductor microcavity structures. In these structures quantum well excitons are embedded in a Fabry - Perot like cavity, defined by two semiconductor dielectric mirrors. In such a system the coupled exciton and cavity photon mode form a mixed - mode polariton, where on - resonance there are two branches, each having 50% exciton and 50% photon character. The separation between the upper and lower branches is a measure of the coupling strength where the strength is dependent on the exciton oscillator strength. This interaction is known as vacuum Rabi coupling, and clear anticrossing is seen when the exciton is tuned through the cavity. In our reflectivity experiments we demonstrate control of the coupling between the cavity mode and the exciton by varying temperature, applied electric or magnetic field. Modelling of the reflectivity spectra and the tuning was done using a Transfer Matrix Reflectivity (TMR) model or a linear dispersion model, where in both cases the excitons are treated as Lorentz oscillators. Temperature tuning is achieved because exciton energy decreases with temperature at a much faster rate than the cavity mode. We have demonstrated vacuum Rabi coupling of the cavity mode with both the heavy - hole and light - hole excitons. Electric field tuning is achieved via the quantum confined Stark effect which decreases the exciton energy with increasing field, whilst at the same time the cavity mode energy remains constant. A study of how the electric field reduction of exciton oscillator strength reduces the vacuum Rabi coupling strength is performed. We report the first observation in a semiconductor structure of motional narrowing, seen in both electric field and in temperature tuning experiments at high magnetic field. In magnetic field studies we show how magnetic field induced increase in exciton oscillator strength affects the vacuum Rabi coupling. We also show by

Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector.

Science.gov (United States)

Liles, Alexandros A; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of a new design for external cavity hybrid lasers consisting of a III-V semiconductor optical amplifier (SOA) with fiber reflector and a photonic crystal (PhC)-based resonant reflector on SOI. The silicon reflector is composed of an SU8 polymer bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and side-mode suppression ratios of more than 25 dB.

Dual resonance approach to optical signal processing beyond the carrier relaxation rate

DEFF Research Database (Denmark)

Heuck, Mikkel; Kristensen, Philip Trøst; Mørk, Jesper

2014-01-01

We propose using two optical cavities in a differential control scheme to increase the bandwidth of cavity-based semiconductor optical signal processing devices beyond the limit given by the slowest carrier relaxation rate of the medium.......We propose using two optical cavities in a differential control scheme to increase the bandwidth of cavity-based semiconductor optical signal processing devices beyond the limit given by the slowest carrier relaxation rate of the medium....

Terahertz semiconductor nonlinear optics

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

2013-01-01

In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

Optical Regeneration and Noise in Semiconductor Devices

DEFF Research Database (Denmark)

Öhman, Filip

2005-01-01

In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R-regenerator......In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R...

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

Science.gov (United States)

McInerney, John G.

2016-03-01

Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

Quantum theory of the optical and electronic properties of semiconductors

CERN Document Server

Haug, Hartmut

2009-01-01

This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2013-01-01

This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

Cavity-polariton interaction mediated by coherent acoustic phonons in semiconductor microcavities

DEFF Research Database (Denmark)

de Lima, Mauricio; Hey, Rudolf; Santos, Paul

The strong coupling between excitons in a quantum well (QW) and photons in a semiconductor microcavity leads to the formation of quasi-particles known as cavity-polaritons. In this contribution, we investigate their interaction with coherent acoustic phonons in the form of surface acoustic waves...

Compound semiconductor optical waveguide switch

Science.gov (United States)

Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

2003-06-10

An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

DEFF Research Database (Denmark)

Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.

2010-01-01

We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

Compact semiconductor lasers

CERN Document Server

Yu, Siyuan; Lourtioz, Jean-Michel

2014-01-01

This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

Anomalous normal mode oscillations in semiconductor microcavities

Energy Technology Data Exchange (ETDEWEB)

Wang, H. [Univ. of Oregon, Eugene, OR (United States). Dept. of Physics; Hou, H.Q.; Hammons, B.E. [Sandia National Labs., Albuquerque, NM (United States)

1997-04-01

Semiconductor microcavities as a composite exciton-cavity system can be characterized by two normal modes. Under an impulsive excitation by a short laser pulse, optical polarizations associated with the two normal modes have a {pi} phase difference. The total induced optical polarization is then expected to exhibit a sin{sup 2}({Omega}t)-like oscillation where 2{Omega} is the normal mode splitting, reflecting a coherent energy exchange between the exciton and cavity. In this paper the authors present experimental studies of normal mode oscillations using three-pulse transient four wave mixing (FWM). The result reveals surprisingly that when the cavity is tuned far below the exciton resonance, normal mode oscillation in the polarization is cos{sup 2}({Omega}t)-like, in contrast to what is expected form the simple normal mode model. This anomalous normal mode oscillation reflects the important role of virtual excitation of electronic states in semiconductor microcavities.

Electrically Pumped Vertical-Cavity Amplifiers

DEFF Research Database (Denmark)

Greibe, Tine

2007-01-01

In this work, the design of electrically pumped vertical cavity semiconductor optical amplifiers (eVCAs) for use in a mode-locked external-cavity laser has been developed, investigated and analysed. Four different eVCAs, one top-emitting and three bottom emitting structures, have been designed...... and discussed. The thesis concludes with recommendations for further work towards the realisation of compact electrically pumped mode-locked vertical externalcavity surface emitting lasers....

Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

Energy Technology Data Exchange (ETDEWEB)

Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)

2016-06-15

We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

System tests of radiation hard optical links for the ATLAS semiconductor tracker

International Nuclear Information System (INIS)

Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

2000-01-01

A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

Numerical investigations on the performance of external-cavity mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Mulet, Josep; Mørk, Jesper

2004-01-01

The performance of an external-cavity mode-locked semiconductor laser is analyzed theoretically and numerically. Passive mode-locking is described using a fully-distributed time-domain model including fast effects, spectral hole burning and carrier heating. We provide optimization rules in order ...

The Dynamics of Semiconductor Optical Amplifiers – Modeling and Applications

DEFF Research Database (Denmark)

Mørk, Jesper; Nielsen, Mads Lønstrup; Berg, Tommy Winther

2003-01-01

The importance of semiconductor optical amplifiers is discussed. A semiconductor optical amplifier (SOA) is a semiconductor laser with anti-reflection coated facets that amplifies an injected light signal by means of stimulated emission. SOAs have a number of unique properties that open up...

Identification of amplitude and timing jitter in external-cavity mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Mulet, Josep; Mørk, Jesper; Kroh, Marcel

2004-01-01

We theoretically and experimentally investigate the dynamics of external-cavity mode-locked semiconductor lasers, focusing on stability properties, optimization of pulsewidth and timing jitter. A new numerical approach allows to clearly separate timing and amplitude jitter....

Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch.

Science.gov (United States)

Ermakov, I V; Tronciu, V Z; Colet, Pere; Mirasso, Claudio R

2009-05-25

We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch

OpenAIRE

Ermakov, Ilya; Tronciu, Vasile; Colet, Pere; Mirasso, Claudio R.

2009-01-01

We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

Optically coupled semiconductor device

Energy Technology Data Exchange (ETDEWEB)

Kumagaya, Naoki

1988-11-18

This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

All-optical 1st- and 2nd-order differential equation solvers with large tuning ranges using Fabry-Pérot semiconductor optical amplifiers.

Science.gov (United States)

Chen, Kaisheng; Hou, Jie; Huang, Zhuyang; Cao, Tong; Zhang, Jihua; Yu, Yuan; Zhang, Xinliang

2015-02-09

We experimentally demonstrate an all-optical temporal computation scheme for solving 1st- and 2nd-order linear ordinary differential equations (ODEs) with tunable constant coefficients by using Fabry-Pérot semiconductor optical amplifiers (FP-SOAs). By changing the injection currents of FP-SOAs, the constant coefficients of the differential equations are practically tuned. A quite large constant coefficient tunable range from 0.0026/ps to 0.085/ps is achieved for the 1st-order differential equation. Moreover, the constant coefficient p of the 2nd-order ODE solver can be continuously tuned from 0.0216/ps to 0.158/ps, correspondingly with the constant coefficient q varying from 0.0000494/ps(2) to 0.006205/ps(2). Additionally, a theoretical model that combining the carrier density rate equation of the semiconductor optical amplifier (SOA) with the transfer function of the Fabry-Pérot (FP) cavity is exploited to analyze the solving processes. For both 1st- and 2nd-order solvers, excellent agreements between the numerical simulations and the experimental results are obtained. The FP-SOAs based all-optical differential-equation solvers can be easily integrated with other optical components based on InP/InGaAsP materials, such as laser, modulator, photodetector and waveguide, which can motivate the realization of the complicated optical computing on a single integrated chip.

Single frequency semiconductor lasers

CERN Document Server

Fang, Zujie; Chen, Gaoting; Qu, Ronghui

2017-01-01

This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

All optical regeneration using semiconductor devices

DEFF Research Database (Denmark)

Mørk, Jesper; Öhman, Filip; Tromborg, Bjarne

All-optical regeneration is a key functionality for implementing all-optical networks. We present a simple theory for the bit-error-rate in links employing all-optical regenerators, which elucidates the interplay between the noise and and nonlinearity of the regenerator. A novel device structure ...... is analyzed, emphasizing general aspects of active semiconductor waveguides....

Semiconductor devices for all-optical regeneration

DEFF Research Database (Denmark)

Öhman, Filip; Bischoff, Svend; Tromborg, Bjarne

2003-01-01

We review different implementations of semiconductor devices for all-optical regeneration. A general model will be presented for all-optical regeneration in fiber links, taking into consideration the trade-off between non-linearity and noise. Furthermore we discuss a novel regenerator type, based...

Quantum Dot Semiconductor Optical Amplifiers - Physics and Applications

DEFF Research Database (Denmark)

Berg, Tommy Winther

2004-01-01

This thesis describes the physics and applications of quantum dot semiconductor optical amplifiers based on numerical simulations. These devices possess a number of unique properties compared with other types of semiconductor amplifiers, which should allow enhanced performance of semiconductor...... respects is comparable to those of fiber amplifiers. The possibility of inverting the optically active states to a large degree is essential in order to achieve this performance. Optical signal processing through cross gain modulation and four wave mixing is modeled and described. For both approaches...... and QW devices and to experiments on quantum dot amplifiers. These comparisons outline the qualitative differences between the different types of amplifiers. In all cases focus is put on the physical processes responsible the differences....

Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

Science.gov (United States)

Kim, Jimyung; Delfyett, Peter J

2008-07-21

We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

Wavelength-controlled external-cavity laser with a silicon photonic crystal resonant reflector

Science.gov (United States)

Gonzalez-Fernandez, A. A.; Liles, Alexandros A.; Persheyev, Saydulla; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of an alternative design of external-cavity hybrid lasers consisting of a III-V Semiconductor Optical Amplifier with fiber reflector and a Photonic Crystal (PhC) based resonant reflector on SOI. The Silicon reflector comprises a polymer (SU8) bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and sidemode suppression ratio of more than 25 dB.

CO2 laser pulse switching by optically excited semiconductors

International Nuclear Information System (INIS)

Silva, V.L. da.

1986-01-01

The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

Semiconductor optical amplifier-based all-optical gates for high-speed optical processing

DEFF Research Database (Denmark)

Stubkjær, Kristian

2000-01-01

Semiconductor optical amplifiers are useful building blocks for all-optical gates as wavelength converters and OTDM demultiplexers. The paper reviews the progress from simple gates using cross-gain modulation and four-wave mixing to the integrated interferometric gates using cross-phase modulation....... These gates are very efficient for high-speed signal processing and open up interesting new areas, such as all-optical regeneration and high-speed all-optical logic functions...

All-optical tunable photonic crystal cavity

DEFF Research Database (Denmark)

Pu, Minhao; Liu, Liu; Ou, Haiyan

2010-01-01

We demonstrate an ultra-small photonic crystal cavity with two resonant modes. An all-optical tuning operation based on the free-carrier plasma effect is, for the first time, realized utilizing a continuous wave light source. The termo-optical effect is minimized by isoproponal infiltration...

Femtojoule-scale all-optical latching and modulation via cavity nonlinear optics.

Science.gov (United States)

Kwon, Yeong-Dae; Armen, Michael A; Mabuchi, Hideo

2013-11-15

We experimentally characterize Hopf bifurcation phenomena at femtojoule energy scales in a multiatom cavity quantum electrodynamical (cavity QED) system and demonstrate how such behaviors can be exploited in the design of all-optical memory and modulation devices. The data are analyzed by using a semiclassical model that explicitly treats heterogeneous coupling of atoms to the cavity mode. Our results highlight the interest of cavity QED systems for ultralow power photonic signal processing as well as for fundamental studies of mesoscopic nonlinear dynamics.

OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

Energy Technology Data Exchange (ETDEWEB)

Grant, C D; Zhang, J Z

2007-09-28

This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

Semiconductor nanoparticles with spatial separation of charge carriers: synthesis and optical properties

International Nuclear Information System (INIS)

Vasiliev, Roman B; Dirin, Dmitry N; Gaskov, Alexander M

2011-01-01

The results of studies on core/shell semiconductor nanoparticles with spatial separation of photoexcited charge carriers are analyzed and generalized. Peculiarities of the electronic properties of semiconductor/semiconductor heterojunctions formed inside such particles are considered. Data on the effect of spatial separation of charge carriers on the optical properties of nanoparticles including spectral shifts of the exciton bands, absorption coefficients and electron–hole pair recombination times are presented. Methods of synthesis of core/shell semiconductor nanoparticles in solutions are discussed. Specific features of the optical properties of anisotropic semiconductor nanoparticles with the semiconductor/semiconductor junctions are noted. The bibliography includes 165 references.

Integrated semiconductor twin-microdisk laser under mutually optical injection

Energy Technology Data Exchange (ETDEWEB)

Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen, E-mail: yzhuang@semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2015-05-11

We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

Dissipative preparation of entanglement in optical cavities

DEFF Research Database (Denmark)

Kastoryano, Michael James; Reiter, Florentin; Sørensen, Anders Søndberg

2011-01-01

We propose a novel scheme for the preparation of a maximally entangled state of two atoms in an optical cavity. Starting from an arbitrary initial state, a singlet state is prepared as the unique fixed point of a dissipative quantum dynamical process. In our scheme, cavity decay is no longer...

Temporal dynamics of all-optical switching in Photonic Crystal Cavity

DEFF Research Database (Denmark)

Colman, Pierre; Heuck, Mikkel; Yu, Yi

2014-01-01

The temporal dynamics of all-optical switching has been investigated in a Photonic Crystal Cavity with a 150fs-40aJ/pulse resolution. This allowed observing for the first time effects like pulse reshaping, pulse delay and intra-cavity Four-Wave-Mixing.......The temporal dynamics of all-optical switching has been investigated in a Photonic Crystal Cavity with a 150fs-40aJ/pulse resolution. This allowed observing for the first time effects like pulse reshaping, pulse delay and intra-cavity Four-Wave-Mixing....

Cavity cooling of an optically levitated submicron particle

Science.gov (United States)

Kiesel, Nikolai; Blaser, Florian; Delić, Uroš; Grass, David; Kaltenbaek, Rainer; Aspelmeyer, Markus

2013-01-01

The coupling of a levitated submicron particle and an optical cavity field promises access to a unique parameter regime both for macroscopic quantum experiments and for high-precision force sensing. We report a demonstration of such controlled interactions by cavity cooling the center-of-mass motion of an optically trapped submicron particle. This paves the way for a light–matter interface that can enable room-temperature quantum experiments with mesoscopic mechanical systems. PMID:23940352

Return-map for semiconductor lasers with optical feedback

DEFF Research Database (Denmark)

Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.

1999-01-01

It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation of the phe......It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...

Effects of Coupling Lens on Optical Refrigeration of Semiconductors

International Nuclear Information System (INIS)

Kai, Ding; Yi-Ping, Zeng

2008-01-01

Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping. A commonly used approach for enhancing luminescence efficiency of a semiconductor device is coupling a lens with the device. We quantitatively study the effects of a coupling lens on optical refrigeration based on rate equations and photon recycling, and calculated cooling efficiencies of different coupling mechanisms and of different lens materials. A GaAs/GaInP heterostructure coupled with a homo-epitaxial GaInP hemispherical lens is recommended. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

All-Optical Switching in Photonic Crystal Cavities

DEFF Research Database (Denmark)

Heuck, Mikkel

All-Optical switching in photonic crystal waveguide-cavity structures is studied predominantly theoretically and numerically, but also from an experimental point of view. We have calculated the first order perturbations to the resonance frequency and decay rate of cavity modes, using a mathematical...... exhibiting Fano resonances. These devices were predicted to be superior to structures with the more well-known Lorentzian line shape in terms of energy consumption and switching contrast. Finally, the mathematical framework of optimal control theory was employed as a general setting, in which the optical...... faster than the photon lifetime by utilizing interference effects....

Scattering-free optical levitation of a cavity mirror.

Science.gov (United States)

Guccione, G; Hosseini, M; Adlong, S; Johnsson, M T; Hope, J; Buchler, B C; Lam, P K

2013-11-01

We demonstrate the feasibility of levitating a small mirror using only radiation pressure. In our scheme, the mirror is supported by a tripod where each leg of the tripod is a Fabry-Perot cavity. The macroscopic state of the mirror is coherently coupled to the supporting cavity modes allowing coherent interrogation and manipulation of the mirror motion. The proposed scheme is an extreme example of the optical spring, where a mechanical oscillator is isolated from the environment and its mechanical frequency and macroscopic state can be manipulated solely through optical fields. We model the stability of the system and find a three-dimensional lattice of trapping points where cavity resonances allow for buildup of optical field sufficient to support the weight of the mirror. Our scheme offers a unique platform for studying quantum and classical optomechanics and can potentially be used for precision gravitational field sensing and quantum state generation.

Intra-Cavity Total Reflection For High Sensitivity Measurement Of Optical Properties

Science.gov (United States)

Pipino, Andrew Charles Rule

1999-11-16

An optical cavity resonator device is provided for conducting sensitive murement of optical absorption by matter in any state with diffraction-limited spatial resolution through utilization of total internal reflection within a high-Q (high quality, low loss) optical cavity. Intracavity total reflection generates an evanescent wave that decays exponentially in space at a point external to the cavity, thereby providing a localized region where absorbing materials can be sensitively probed through alteration of the Q-factor of the otherwise isolated cavity. When a laser pulse is injected into the cavity and passes through the evanescent state, an amplitude loss resulting from absorption is incurred that reduces the lifetime of the pulse in the cavity. By monitoring the decay of the injected pulse, the absorption coefficient of manner within the evanescent wave region is accurately obtained from the decay time measurement.

Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

Energy Technology Data Exchange (ETDEWEB)

Podoskin, A. A., E-mail: podoskin@mail.ioffe.ru; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

2015-08-15

A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

Noise-Immune Cavity-Enhanced Optical Frequency Comb Spectroscopy

Science.gov (United States)

Rutkowski, Lucile; Khodabakhsh, Amir; Johanssson, Alexandra C.; Foltynowicz, Aleksandra

2015-06-01

We present noise-immune cavity-enhanced optical frequency comb spectroscopy (NICE-OFCS), a recently developed technique for sensitive, broadband, and high resolution spectroscopy. In NICE-OFCS an optical frequency comb (OFC) is locked to a high finesse cavity and phase-modulated at a frequency precisely equal to (a multiple of) the cavity free spectral range. Since each comb line and sideband is transmitted through a separate cavity mode in exactly the same way, any residual frequency noise on the OFC relative to the cavity affects each component in an identical manner. The transmitted intensity contains a beat signal at the modulation frequency that is immune to frequency-to-amplitude noise conversion by the cavity, in a way similar to continuous wave noise-immune cavity-enhanced optical heterodyne molecular spectroscopy (NICE-OHMS). The light transmitted through the cavity is detected with a fast-scanning Fourier-transform spectrometer (FTS) and the NICE-OFCS signal is obtained by fast Fourier transform of the synchronously demodulated interferogram. Our NICE-OFCS system is based on an Er:fiber femtosecond laser locked to a cavity with a finesse of ˜9000 and a fast-scanning FTS equipped with a high-bandwidth commercial detector. We measured NICE-OFCS signals from the 3νb{1}+νb{3} overtone band of CO_2 around 1.57 μm and achieved absorption sensitivity 6.4×10-11cm-1 Hz-1/2 per spectral element, corresponding to a minimum detectable CO_2 concentration of 25 ppb after 330 s integration time. We will describe the principles of the technique and its technical implementation, and discuss the spectral lineshapes of the NICE-OFCS signals. A. Khodabakhsh, C. Abd Alrahman, and A. Foltynowicz, Opt. Lett. 39, 5034-5037 (2014). J. Ye, L. S. Ma, and J. L. Hall, J. Opt. Soc. Am. B 15, 6-15 (1998). A. Khodabakhsh, A. C. Johansson, and A. Foltynowicz, Appl. Phys. B (2015) doi:10.1007/s00340-015-6010-7.

Delay induced high order locking effects in semiconductor lasers

Science.gov (United States)

Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

All-metal coupling and package of semiconductor laser and amplifier with optical fiber

International Nuclear Information System (INIS)

Xu Fenglan; Li Lina; Zhang Yueqing

1992-01-01

The semiconductor laser and optical amplifier made by Changchun Institute of Physics coupled with optical fiber by use of all-metal coupling are represented. The net gain of semiconductor laser amplifier with optical fiber is 14 ∼18 dB

All-semiconductor metamaterial-based optical circuit board at the microscale

International Nuclear Information System (INIS)

Min, Li; Huang, Lirong

2015-01-01

The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing

Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

International Nuclear Information System (INIS)

Cocquelin, B.

2009-02-01

Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

Lateral shearing optical gradient force in coupled nanobeam photonic crystal cavities

Energy Technology Data Exchange (ETDEWEB)

Du, Han; Zhang, Xingwang; Chau, Fook Siong; Zhou, Guangya, E-mail: mpezgy@nus.edu.sg [Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575 (Singapore); Deng, Jie [Institute of Materials Research and Engineering, 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634 (Singapore); Zhao, Yunshan [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583 (Singapore)

2016-04-25

We report the experimental observation of lateral shearing optical gradient forces in nanoelectromechanical systems (NEMS) controlled dual-coupled photonic crystal (PhC) nanobeam cavities. With an on-chip integrated NEMS actuator, the coupled cavities can be mechanically reconfigured in the lateral direction while maintaining a constant coupling gap. Shearing optical gradient forces are generated when the two cavity centers are laterally displaced. In our experiments, positive and negative lateral shearing optical forces of 0.42 nN and 0.29 nN are observed with different pumping modes. This study may broaden the potential applications of the optical gradient force in nanophotonic devices and benefit the future nanooptoelectromechanical systems.

Analysis of timing jitter in external-cavity mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Mulet, Josep; Mørk, Jesper

2006-01-01

We develop a comprehensive theoretical description of passive mode-locking in external-cavity mode-locked semiconductor lasers based on a fully distributed time-domain approach. The model accounts for the dispersion of both gain and refractive index, nonlinear gain saturation from ultrafast...... processes, self-phase modulation, and spontaneous emission noise. Fluctuations of the mode-locked pulses are characterized from the fully distributed model using direct integration of noise-skirts in the phase-noise spectrum and the soliton perturbations introduced by Haus. We implement the model in order...

Birefringence Optical Feedback with a Folded Cavity in HeNe Laser

International Nuclear Information System (INIS)

Wu Yun; Tan Yi-Dong

2013-01-01

The birefringence optical feedback with a folded cavity in HeNe laser is investigated. A theory model based on the equivalent cavity of the Fabry—Perot interferometer is presented. The phase difference between the two intensities in birefringence feedback is twice the retardation of the wave plate. The phase difference is invariable when the length of the feedback cavity changes. With the adoption of a cube corner prism (CCP) to form a folded cavity, the fringe frequency is doubled, and the resolution of the displacement sensor based on birefringence optical feedback with a folded cavity is improved. A resistance chain of 5-fold subdivision and 4-fold logic subdivision is used as further subdivision. The resolution of λ/80 is obtained eventually; for 632.8 nm HeNe laser it is 7.91 nm. The displacement sensor based on birefringence optical feedback with a folded cavity is simple and of high resolution, large measurement range, low cost, and is of great application potential in industry

Handbook of optical microcavities

CERN Document Server

Choi, Anthony H W

2014-01-01

An optical cavity confines light within its structure and constitutes an integral part of a laser device. Unlike traditional gas lasers, semiconductor lasers are invariably much smaller in dimensions, making optical confinement more critical than ever. In this book, modern methods that control and manipulate light at the micrometer and nanometer scales by using a variety of cavity geometries and demonstrate optical resonance from ultra-violet (UV) to infra-red (IR) bands across multiple material platforms are explored. The book has a comprehensive collection of chapters that cover a wide range

Cavity nonlinear optics with layered materials

Directory of Open Access Journals (Sweden)

Fryett Taylor

2017-12-01

Full Text Available Unprecedented material compatibility and ease of integration, in addition to the unique and diverse optoelectronic properties of layered materials, have generated significant interest in their utilization in nanophotonic devices. While initial nanophotonic experiments with layered materials primarily focused on light sources, modulators, and detectors, recent efforts have included nonlinear optical devices. In this paper, we review the current state of cavity-enhanced nonlinear optics with layered materials. Along with conventional nonlinear optics related to harmonic generation, we report on emerging directions of nonlinear optics, where layered materials can potentially play a significant role.

Mounting system for optical frequency reference cavities

Science.gov (United States)

Notcutt, Mark (Inventor); Hall, John L. (Inventor); Ma, Long-Sheng (Inventor)

2008-01-01

A technique for reducing the vibration sensitivity of laser-stabilizing optical reference cavities is based upon an improved design and mounting method for the cavity, wherein the cavity is mounted vertically. It is suspended at one plane, around the spacer cylinder, equidistant from the mirror ends of the cavity. The suspension element is a collar of an extremely low thermal expansion coefficient material, which surrounds the spacer cylinder and contacts it uniformly. Once the collar has been properly located, it is cemented in place so that the spacer cylinder is uniformly supported and does not have to be squeezed at all. The collar also includes a number of cavities partially bored into its lower flat surface, around the axial bore. These cavities are support points, into which mounting base pins will be inserted. Hence the collar is supported at a minimum of three points.

BROADBAND TRAVELLING WAVE SEMICONDUCTOR OPTICAL AMPLIFIER

DEFF Research Database (Denmark)

2010-01-01

Broadband travelling wave semiconductor optical amplifier (100, 200, 300, 400, 800) for amplification of light, wherein the amplifier (100, 200, 300, 400, 800) comprises a waveguide region (101, 201, 301, 401, 801) for providing confinement of the light in transverse directions and adapted...

Testing methodologies and systems for semiconductor optical amplifiers

Science.gov (United States)

Wieckowski, Michael

Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

Optical re-injection in cavity-enhanced absorption spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Leen, J. Brian, E-mail: b.leen@lgrinc.com; O’Keefe, Anthony [Los Gatos Research, 67 E. Evelyn Avenue, Suite 3, Mountain View, California 94041 (United States)

2014-09-15

Non-mode-matched cavity-enhanced absorption spectrometry (e.g., cavity ringdown spectroscopy and integrated cavity output spectroscopy) is commonly used for the ultrasensitive detection of trace gases. These techniques are attractive for their simplicity and robustness, but their performance may be limited by the reflection of light from the front mirror and the resulting low optical transmission. Although this low transmitted power can sometimes be overcome with higher power lasers and lower noise detectors (e.g., in the near-infrared), many regimes exist where the available light intensity or photodetector sensitivity limits instrument performance (e.g., in the mid-infrared). In this article, we describe a method of repeatedly re-injecting light reflected off the front mirror of the optical cavity to boost the cavity's circulating power and deliver more light to the photodetector and thus increase the signal-to-noise ratio of the absorption measurement. We model and experimentally demonstrate the method's performance using off-axis cavity ringdown spectroscopy (OA-CRDS) with a broadly tunable external cavity quantum cascade laser. The power coupled through the cavity to the detector is increased by a factor of 22.5. The cavity loss is measured with a precision of 2 × 10{sup −10} cm{sup −1}/√(Hz;) an increase of 12 times over the standard off-axis configuration without reinjection and comparable to the best reported sensitivities in the mid-infrared. Finally, the re-injected CRDS system is used to measure the spectrum of several volatile organic compounds, demonstrating the improved ability to resolve weakly absorbing spectroscopic features.

Optical double-locked semiconductor lasers

Science.gov (United States)

AlMulla, Mohammad

2018-06-01

Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

Enhancing optical nonreciprocity by an atomic ensemble in two coupled cavities

Science.gov (United States)

Song, L. N.; Wang, Z. H.; Li, Yong

2018-05-01

We study the optical nonreciprocal propagation in an optical molecule of two coupled cavities with one of them interacting with a two-level atomic ensemble. The effect of increasing the number of atoms on the optical isolation ratio of the system is studied. We demonstrate that the significant nonlinearity supplied by the coupling of the atomic ensemble with the cavity leads to the realization of greatly-enhanced optical nonreciprocity compared with the case of single atom.

Single photon sources with single semiconductor quantum dots

Science.gov (United States)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Optical cavity-assisted broadband optical transparency of a plasmonic metal film

International Nuclear Information System (INIS)

Liu, Zhengqi; Nie, Yiyou; Yuan, Wen; Liu, Xiaoshan; Huang, Shan; Gao, Huogui; Gu, Gang; Liu, Guiqiang; Chen, Jing

2015-01-01

We theoretically present a powerful method to achieve a continuous metal film structure with broadband optical transparency via introducing a dielectric Fabry–Pérot (FP) cavity. An incident optical field could be efficiently coupled and confined with the strong localized plasmons by the non-close-packed plasmonic crystal at the input part and could then become re-radiated output via the transmission channel supported by the dielectric cavity. The formed photonic-plasmonic system could therefore make the seamless metal film structure have a superior near-unity transparency (up to 97%) response and a broadband transparent spectrum with bandwidth >245 nm (with transmittance >90%) in the optical regime. The observed optical properties of the proposed structure can be highly tuned via varying the structural parameters. Based on the colloidal assembly method, the proposed plasmonic crystal can be fabricated in a large area. In addition, the achieved optical transparency can be retained in the extremely roughed metal film structure. Thereby, the findings could offer a feasible way to achieve a broadband transparent metal film structure and hold potential applications in transparent electrodes, touch screens and interactive electronics. (paper)

Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

Science.gov (United States)

Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)

2010-01-01

A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

Optical Properties of Semiconductor Quantum Dots

NARCIS (Netherlands)

Perinetti, U.

2011-01-01

This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots

Two-color mid-infrared spectroscopy of optically doped semiconductors

International Nuclear Information System (INIS)

Forcales, M.; Klik, M.A.J.; Vinh, N.Q.; Phillips, J.; Wells, J-P.R.; Gregorkiewicz, T.

2003-01-01

Optical doping is an attractive method to tailor photonic properties of semiconductor matrices for development of solid-state electroluminescent structures. For practical applications, thermal stability of emission obtained from these materials is required. Thermal processes can be conveniently investigated by two-color spectroscopy in the visible and the mid-infrared. Free-electron laser is a versatile high-brilliance source of radiation in the latter spectral range. In this contribution, we briefly review some of the results obtained recently by the two-color spectroscopy with a free-electron laser in different semiconductors optically doped with rare earth and transition metal ions. Effects leading to both enhancement and quenching of emission from optical dopants will be presented. For InP:Yb, Si:Er, and Si:Cu activation of particular optically induced non-radiative recombination paths will be shown. For Si:Er and Si:Ag, observation of a low temperature optical memory effect will be reported

Excitons in atomically thin 2D semiconductors and their applications

Science.gov (United States)

Xiao, Jun; Zhao, Mervin; Wang, Yuan; Zhang, Xiang

2017-06-01

The research on emerging layered two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), reveals unique optical properties generating significant interest. Experimentally, these materials were observed to host extremely strong light-matter interactions as a result of the enhanced excitonic effect in two dimensions. Thus, understanding and manipulating the excitons are crucial to unlocking the potential of 2D materials for future photonic and optoelectronic devices. In this review, we unravel the physical origin of the strong excitonic effect and unique optical selection rules in 2D semiconductors. In addition, control of these excitons by optical, electrical, as well as mechanical means is examined. Finally, the resultant devices such as excitonic light emitting diodes, lasers, optical modulators, and coupling in an optical cavity are overviewed, demonstrating how excitons can shape future 2D optoelectronics.

Optical Biosensors Based on Semiconductor Nanostructures

Directory of Open Access Journals (Sweden)

Raúl J. Martín-Palma

2009-06-01

Full Text Available The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented.

Bistable laser device with multiple coupled active vertical-cavity resonators

Science.gov (United States)

Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

2003-08-19

A new class of bistable coupled-resonator vertical-cavity semiconductor laser devices has been developed. These bistable laser devices can be switched, either electrically or optically, between lasing and non-lasing states. A switching signal with a power of a fraction of a milliwatt can change the laser output of such a device by a factor of a hundred, thereby enabling a range of optical switching and data encoding applications.

Optothermal transport behavior in whispering gallery mode optical cavities

Energy Technology Data Exchange (ETDEWEB)

Soltani, Soheil [Ming Hsieh Department of Electrical Engineering-Electrophysics, University of Southern California, Los Angeles, California 90089 (United States); Armani, Andrea M., E-mail: armani@usc.edu [Ming Hsieh Department of Electrical Engineering-Electrophysics, University of Southern California, Los Angeles, California 90089 (United States); Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States)

2014-08-04

Over the past century, whispering gallery mode optical cavities have enabled numerous advances in science and engineering, such as discoveries in quantum mechanics and non-linear optics, as well as the development of optical gyroscopes and add drop filters. One reason for their widespread appeal is their ability to confine light for long periods of time, resulting in high circulating intensities. However, when sufficiently large amounts of optical power are coupled into these cavities, they begin to experience optothermal or photothermal behavior, in which the optical energy is converted into heat. Above the optothermal threshold, the resonance behavior is no longer solely defined by electromagnetics. Previous work has primarily focused on the role of the optothermal coefficient of the material in this instability. However, the physics of this optothermal behavior is significantly more complex. In the present work, we develop a predictive theory based on a generalizable analytical expression in combination with a geometry-specific COMSOL Multiphysics finite element method model. The simulation couples the optical and thermal physics components, accounting for geometry variations as well as the temporal and spatial profile of the optical field. To experimentally verify our theoretical model, the optothermal thresholds of a series of silica toroidal resonant cavities are characterized at different wavelengths (visible through near-infrared) and using different device geometries. The silica toroid offers a particularly rigorous case study for the developed optothermal model because of its complex geometrical structure which provides multiple thermal transport paths.

Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

Science.gov (United States)

Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

2016-02-22

With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

Optical filter finesses enhancement based on nested coupled cavities and active medium

Science.gov (United States)

Adib, George A.; Sabry, Yasser M.; Khalil, Diaa

2016-04-01

Optical filters with relatively large FSR and narrow linewidth are simultaneously needed for different applications. The ratio between the FSR and the 3-dB linewidth is given by finesse of the filter, which is solely determined by the different energy loss mechanisms limited by the technology advancement. In this work, we present a novel coupled-cavity configuration embedding an optical filter and a gain medium; allowing an overall finesse enhancement and simultaneous FSR and 3-dB linewidth engineering beyond the technological limits of the filter fabrication method. The configuration consists of two resonators. An active ring resonator comprises an optical gain medium and a passive resonator. In one configuration, the optical filter is the passive resonator itself. In a second configuration, the passive resonator is another ring resonator that embeds the optical filter. The presented configurations using a semiconductor optical amplifier are applied one time to a mechanically Fabry-Perot filter in the first presented configuration; and a second time to a fiber ring filter in the second presented configuration. The mechanical filter has an original 3-dB linewidth of 1nm and an FSR that is larger than 100nm while the enhanced linewidth is about 0.3nm. The fiber ring filter length is 4 m and directional coupler ratios of 90/10corresponding to a 3-dBlinewidth of about 4MHz and an FSR of 47 MHz. The enhanced 3- dBlinewidth of the overall filter configuration is 200kHz, demonstrating finesse enhancement up to20 times the original finesse of the filter.

Optical Material Characterization Using Microdisk Cavities

Science.gov (United States)

Michael, Christopher P.

Since Jack Kilby recorded his "Monolithic Idea" for integrated circuits in 1958, microelectronics companies have invested billions of dollars in developing the silicon material system to increase performance and reduce cost. For decades, the industry has made Moore's Law, concerning cost and transistor density, a self-fulfilling prophecy by integrating technical and material requirements vertically down their supply chains and horizontally across competitors in the market. At recent technology nodes, the unacceptable scaling behavior of copper interconnects has become a major design constraint by increasing latency and power consumption---more than 50% of the power consumed by high speed processors is dissipated by intrachip communications. Optical networks at the chip scale are a potential low-power high-bandwidth replacement for conventional global interconnects, but the lack of efficient on-chip optical sources has remained an outstanding problem despite significant advances in silicon optoelectronics. Many material systems are being researched, but there is no ideal candidate even though the established infrastructure strongly favors a CMOS-compatible solution. This thesis focuses on assessing the optical properties of materials using microdisk cavities with the intention to advance processing techniques and materials relevant to silicon photonics. Low-loss microdisk resonators are chosen because of their simplicity and long optical path lengths. A localized photonic probe is developed and characterized that employs a tapered optical-fiber waveguide, and it is utilized in practical demonstrations to test tightly arranged devices and to help prototype new fabrication methods. A case study in AlxGa1-xAs illustrates how the optical scattering and absorption losses can be obtained from the cavity-waveguide transmission. Finally, single-crystal Er2O3 epitaxially grown on silicon is analyzed in detail as a potential CMOS-compatable gain medium due to its high Er3

Applied optics

International Nuclear Information System (INIS)

Orszag, A.; Antonetti, A.

1988-01-01

The 1988 progress report, of the Applied Optics laboratory, of the (Polytechnic School, France), is presented. The optical fiber activities are focused on the development of an optical gyrometer, containing a resonance cavity. The following domains are included, in the research program: the infrared laser physics, the laser sources, the semiconductor physics, the multiple-photon ionization and the nonlinear optics. Investigations on the biomedical, the biological and biophysical domains are carried out. The published papers and the congress communications are listed [fr

Cavity quantum electrodynamics with Anderson-localized modes

DEFF Research Database (Denmark)

Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

2010-01-01

by a factor of 15 on resonance with the Anderson-localized mode, and 94% of the emitted single photons coupled to the mode. Disordered photonic media thus provide an efficient platform for quantum electrodynamics, offering an approach to inherently disorder-robust quantum information devices.......A major challenge in quantum optics and quantum information technology is to enhance the interaction between single photons and single quantum emitters. This requires highly engineered optical cavities that are inherently sensitive to fabrication imperfections. We have demonstrated a fundamentally...... different approach in which disorder is used as a resource rather than a nuisance. We generated strongly confined Anderson-localized cavity modes by deliberately adding disorder to photonic crystal waveguides. The emission rate of a semiconductor quantum dot embedded in the waveguide was enhanced...

Dynamics in terahertz semiconductor microcavity: quantum noise spectra

Science.gov (United States)

Jabri, H.; Eleuch, H.

2018-05-01

We investigate the physics of an optical semiconductor microcavity containing a coupled double quantum well interacting with cavity photons. The photon statistics of the transmitted light by the cavity is explored. We show that the nonlinear interactions in the direct and indirect excitonic modes generate an important squeezing despite the weak nonlinearities. When the strong coupling regime is achieved, the noise spectra of the system is dominated by the indirect exciton distribution. At the opposite, in the weak regime, direct excitons contribute much larger in the noise spectra.

Auger Processes Mediating the Nonresonant Optical Emission from a Semiconductor Quantum Dot Embedded Inside an Optical Cavity

DEFF Research Database (Denmark)

Settnes, Mikkel; Nielsen, Per Kær; Lund, Anders Mølbjerg

2013-01-01

perform microscopic calculations of the effect treating the wetting layer as a non-Markovian reservoir interacting with the coupled quantum dot-cavity system through Coulomb interactions. Experimentally, cavity feeding has been observed in the asymmetric detuning range of -10 to +45 meV. We show...

Bit rate and pulse width dependence of four-wave mixing of short optical pulses in semiconductor optical amplifiers

DEFF Research Database (Denmark)

Diez, S.; Mecozzi, A.; Mørk, Jesper

1999-01-01

We investigate the saturation properties of four-wave mixing of short optical pulses in a semiconductor optical amplifier. By varying the gain of the optical amplifier, we find a strong dependence of both conversion efficiency and signal-to-background ratio on pulse width and bit rate....... In particular, the signal-to-background ratio can be optimized for a specific amplifier gain. This behavior, which is coherently described in experiment and theory, is attributed to the dynamics of the amplified spontaneous emission, which is the main source of noise in a semiconductor optical amplifier....

Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier

International Nuclear Information System (INIS)

Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu

2009-01-01

The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design

Dephasing of optically generated electron spins in semiconductors

International Nuclear Information System (INIS)

Idrish Miah, M.

2010-01-01

Dephasing of optically generated electron spins in the presence of the external magnetic field and electric bias in semiconductor nano-structures has been studied by time- and polarization-resolved spectrometry. The obtained experimental data are presented in dependence of the strength of the magnetic field. The optically generated electron-spin precession frequency and dephasing time and rate are estimated. It is found that both the spin precession frequency and dephasing rate increase linearly with the external magnetic field up to about 9 T. However, the spin dephasing time is within sub-μs and is found to decrease exponentially with the strength of the external magnetic field. The results are discussed by exploring possible mechanisms of spin dephasing in low-dimensional semiconductor structures, where the quantum-confinement persists within the nano-range.

Dephasing of optically generated electron spins in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Idrish Miah, M., E-mail: m.miah@griffith.edu.a [Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331 (Bangladesh)

2010-09-13

Dephasing of optically generated electron spins in the presence of the external magnetic field and electric bias in semiconductor nano-structures has been studied by time- and polarization-resolved spectrometry. The obtained experimental data are presented in dependence of the strength of the magnetic field. The optically generated electron-spin precession frequency and dephasing time and rate are estimated. It is found that both the spin precession frequency and dephasing rate increase linearly with the external magnetic field up to about 9 T. However, the spin dephasing time is within sub-{mu}s and is found to decrease exponentially with the strength of the external magnetic field. The results are discussed by exploring possible mechanisms of spin dephasing in low-dimensional semiconductor structures, where the quantum-confinement persists within the nano-range.

Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback

Science.gov (United States)

Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy

2017-11-01

Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

Laser of optical fiber composed by two coupled cavities: application as optical fiber sensor

International Nuclear Information System (INIS)

Vazquez S, R.A.; Kuzin, E.A.; Ibarra E, B.; May A, M.; Shlyagin, M.; Marquez B, I.

2004-01-01

We show an optical fiber laser sensor which consist of two cavities coupled and three fiber Bragg gratings. We used one Bragg grating (called reference) and two Bragg gratings (called sensors), which have the lower reflection wavelength. The reference grating with the two sensors grating make two cavities: first one is the internal cavity which has 4230 m of length and the another one is the external cavity which has 4277 m of length. Measuring the laser beating frequency for a resonance cavity and moving the frequency peaks when the another cavity is put in resonance, we prove that the arrangement can be used as a two points sensor for determining the difference of temperature or stress between these two points. (Author)

A compact chaotic laser device with a two-dimensional external cavity structure

International Nuclear Information System (INIS)

Sunada, Satoshi; Adachi, Masaaki; Fukushima, Takehiro; Shinohara, Susumu; Arai, Kenichi; Harayama, Takahisa

2014-01-01

We propose a compact chaotic laser device, which consists of a semiconductor laser and a two-dimensional (2D) external cavity for delayed optical feedback. The overall size of the device is within 230 μm × 1 mm. A long time delay sufficient for chaos generation can be achieved with the small area by the multiple reflections at the 2D cavity boundary, and the feedback strength is controlled by the injection current to the external cavity. We experimentally demonstrate that a variety of output properties, including chaotic output, can be selectively generated by controlling the injection current to the external cavity.

Purcell effect in an organic-inorganic halide perovskite semiconductor microcavity system

International Nuclear Information System (INIS)

Wang, Jun; Wang, Yafeng; Hu, Tao; Wu, Lin; Shen, Xuechu; Chen, Zhanghai; Cao, Runan; Xu, Fei; Da, Peimei; Zheng, Gengfeng; Lu, Jian

2016-01-01

Organic-inorganic halide perovskite semiconductors with the attractive physics properties, including strong photoluminescence (PL), huge oscillator strengths, and low nonradiative recombination losses, are ideal candidates for studying the light-matter interaction in nanostructures. Here, we demonstrate the coupling of the exciton state and the cavity mode in the lead halide perovskite microcavity system at room temperature. The Purcell effect in the coupling system is clearly observed by using angle-resolved photoluminescence spectra. Kinetic analysis based on time-resolved PL reveals that the spontaneous emission rate of the halide perovskite semiconductor is significantly enhanced at resonance of the exciton energy and the cavity mode. Our results provide the way for developing electrically driven organic polariton lasers, optical devices, and on-chip coherent quantum light sources

Observation of modulation speed enhancement, frequency modulation suppression, and phase noise reduction by detuned loading in a coupled-cavity semiconductor laser

OpenAIRE

Vahala, Kerry; Paslaski, Joel; Yariv, Amnon

1985-01-01

Simultaneous direct modulation response enhancement, phase noise (linewidth) reduction, and frequency modulation suppression are produced in a coupled-cavity semiconductor laser by the detuned loading mechanism.

Conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation using optically injected semiconductor lasers.

Science.gov (United States)

Hung, Yu-Han; Tseng, Chin-Hao; Hwang, Sheng-Kwang

2018-06-01

This Letter investigates an optically injected semiconductor laser for conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation. The underlying mechanism relies solely on nonlinear laser characteristics and, thus, only a typical semiconductor laser is required as the key conversion unit. This conversion can be achieved for a broadly tunable frequency range up to at least 65 GHz. After conversion, the microwave phase quality, including linewidth and phase noise, is mostly preserved, and simultaneous microwave amplification up to 23 dB is feasible.

High-performance semiconductor optical preamplifier receiver at 10 Gb/s

DEFF Research Database (Denmark)

Mikkelsen, Benny; Jørgensen, Carsten Gudmann; Jensen, N.

1993-01-01

A semiconductor optical preamplifier receiver for bitrates of 10 Gb/s is described. The measured sensitivity is -28 dBm, with a polarization sensitivity of less than 0.5 dB. Using the same transmitter and receiver configuration but with a 980-nm pumped fiber amplifier instead of the semiconductor...... amplifier, the sensitivity is -34 dBm...

Infrared magneto-optical properties of (III, Mn)V ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Sinova, J.; Jungwirth, Tomáš; Kučera, Jan; MacDonald, A. H.

2003-01-01

Roč. 67, č. 23 (2003), s. 235203-1 - 235203-11 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-optical properties ac-Hall conductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

Acousto-optical interaction of surface acoustic and optical waves in a two-dimensional phoxonic crystal hetero-structure cavity.

Science.gov (United States)

Ma, Tian-Xue; Zou, Kui; Wang, Yue-Sheng; Zhang, Chuanzeng; Su, Xiao-Xing

2014-11-17

Phoxonic crystal is a promising material for manipulating sound and light simultaneously. In this paper, we theoretically demonstrate the propagation of acoustic and optical waves along the truncated surface of a two-dimensional square-latticed phoxonic crystal. Further, a phoxonic crystal hetero-structure cavity is proposed, which can simultaneously confine surface acoustic and optical waves. The interface motion and photoelastic effects are taken into account in the acousto-optical coupling. The results show obvious shifts in eigenfrequencies of the photonic cavity modes induced by different phononic cavity modes. The symmetry of the phononic cavity modes plays a more important role in the single-phonon exchange process than in the case of the multi-phonon exchange. Under the same deformation, the frequency shift of the photonic transverse electric mode is larger than that of the transverse magnetic mode.

Anisotropic optical feedback of single frequency intra-cavity He–Ne laser

International Nuclear Information System (INIS)

Lu-Fei, Zhou; Shu-Lian, Zhang; Yi-Dong, Tan; Wei-Xin, Liu; Bin, Zhang

2009-01-01

This paper presents the anisotropic optical feedback of a single frequency intra-cavity He–Ne laser. A novel phenomenon was discovered that the laser output an elliptical polarized frequency instead of the initial linear polarized one. Two intensities with a phase difference were detected, both of which were modulated in the form of cosine wave and a fringe shift corresponds to a λ/2 movement of the feedback mirror. The phase difference can be continuously modulated by the wave plate in the external cavity. Frequency stabilization was used to stabilize the laser frequency so as to enlarge the measuring range and improve the measurement precision. This anisotropic optical feedback system offers a potential displacement measurement technology with the function of subdivision of λ/2 and in-time direction judgment. The three-mirror Fabry–Perot cavity model is used to present the experimental results. Given the lack of need of lasing adjustment, this full intra-cavity laser can significantly improve the simplicity and stability of the optical feedback system. (fluids, plasmas and electric discharges)

Bifurcation structure of an optical ring cavity

DEFF Research Database (Denmark)

Kubstrup, C.; Mosekilde, Erik

1996-01-01

One- and two-dimensional continuation techniques are applied to determine the basic bifurcation structure for an optical ring cavity with a nonlinear absorbing element (the Ikeda Map). By virtue of the periodic structure of the map, families of similar solutions develop in parameter space. Within...

Automated optical inspection and image analysis of superconducting radio-frequency cavities

Energy Technology Data Exchange (ETDEWEB)

Wenskat, Marc

2017-04-15

The inner surface of superconducting cavities plays a crucial role to achieve highest accelerating fields and low losses. For an investigation of this inner surface of more than 100 cavities within the cavity fabrication for the European XFEL and the ILC HiGrade Research Project, an optical inspection robot OBACHT was constructed. To analyze up to 2325 images per cavity, an image processing and analysis code was developed and new variables to describe the cavity surface were obtained. The accuracy of this code is up to 97% and the PPV 99% within the resolution of 15.63 μm. The optical obtained surface roughness is in agreement with standard profilometric methods. The image analysis algorithm identified and quantified vendor specific fabrication properties as the electron beam welding speed and the different surface roughness due to the different chemical treatments. In addition, a correlation of ρ=-0.93 with a significance of 6σ between an obtained surface variable and the maximal accelerating field was found.

Automated optical inspection and image analysis of superconducting radio-frequency cavities

International Nuclear Information System (INIS)

Wenskat, Marc

2017-04-01

The inner surface of superconducting cavities plays a crucial role to achieve highest accelerating fields and low losses. For an investigation of this inner surface of more than 100 cavities within the cavity fabrication for the European XFEL and the ILC HiGrade Research Project, an optical inspection robot OBACHT was constructed. To analyze up to 2325 images per cavity, an image processing and analysis code was developed and new variables to describe the cavity surface were obtained. The accuracy of this code is up to 97% and the PPV 99% within the resolution of 15.63 μm. The optical obtained surface roughness is in agreement with standard profilometric methods. The image analysis algorithm identified and quantified vendor specific fabrication properties as the electron beam welding speed and the different surface roughness due to the different chemical treatments. In addition, a correlation of ρ=-0.93 with a significance of 6σ between an obtained surface variable and the maximal accelerating field was found.

Electromagnetic Wave Chaos in Gradient Refractive Index Optical Cavities

International Nuclear Information System (INIS)

Wilkinson, P. B.; Fromhold, T. M.; Taylor, R. P.; Micolich, A. P.

2001-01-01

Electromagnetic wave chaos is investigated using two-dimensional optical cavities formed in a cylindrical gradient refractive index lens with reflective surfaces. When the planar ends of the lens are cut at an angle to its axis, the geometrical ray paths are chaotic. In this regime, the electromagnetic mode spectrum of the cavity is modulated by both real and ghost periodic ray paths, which also 'scar' the electric field intensity distributions of many modes. When the cavity is coupled to waveguides, the eigenmodes generate complex series of resonant peaks in the electromagnetic transmission spectrum

Synthesis and optical properties of novel organic-inorganic hybrid nanolayer structure semiconductors

International Nuclear Information System (INIS)

Zhang Sanjun; Lanty, Gaetan; Lauret, Jean-Sebastien; Deleporte, Emmanuelle; Audebert, Pierre; Galmiche, Laurent

2009-01-01

We report on the synthesis of some novel organic-inorganic hybrid 2D perovskite semiconductors (R-(CH 2 ) n NH 3 ) 2 PbX 4 . These semiconductors are self-assembled intercalation nanolayers and have a multi-quantum-well energy level structure. We systematically vary the characteristic of organic groups (R-(CH 2 ) n NH 3 + ) to study the relationship between their structures and the optical properties of (R-(CH 2 ) n NH 3 ) 2 PbX 4 . From optical absorption and photoluminescence spectroscopy experiments performed on series of samples, we find some trends of choosing the organic groups to improve the optical performance of (R-(CH 2 ) n NH 3 ) 2 PbX 4 . A new organic group, which allows synthesis of nanolayer perovskite semiconductors with quite high photoluminescence efficiency and better long-term stability, has been found.

FDTD simulations of near-field mediated semiconductor molecular optical properties

Energy Technology Data Exchange (ETDEWEB)

Zhang, Dai; Sakrow, Marcus; Mihaljevic, Josip; Meixner, Alfred J. [Institute of Physical and Theoretical Chemistry, University Tuebingen, Auf der Morgenstelle 8, Tuebingen (Germany)

2010-07-01

The optical properties of molecules can be dramatically altered when they are in a close proximity of an excited metal antenna. In order to get insight into how the antenna generated near-field influences the optical properties of low quantum yield molecules, we carried out FDTD simulations of a sharp laser-illuminated Au tip approaching to a semiconductor thin film. The time-averaged field distribution between the semiconductor thin film and the tip antenna is calculated regarding to different distances. Our calculation demonstrates that the coupling between the localized plasmon at the tip apex and semiconductor polariton can be achieved building up a distance-dependent high field enhancement. Our experimental results show that such a high field strength enhances not only the excitation process by a factor of 104, but alters the radiative: non-radiative decay rate giving approx. 15 times stronger photoluminescence emission.

Ultrafast dynamics in semiconductor optical amplifiers and all-optical processing: Bulk versus quantum dot devices

DEFF Research Database (Denmark)

Mørk, Jesper; Berg, Tommy Winther; Magnúsdóttir, Ingibjörg

2003-01-01

We discuss the dynamical properties of semiconductor optical amplifiers and the importance for all-optical signal processing. In particular, the dynamics of quantum dot amplifiers is considered and it is suggested that these may be operated at very high bit-rates without significant patterning...

Deterministically entangling multiple remote quantum memories inside an optical cavity

Science.gov (United States)

Yan, Zhihui; Liu, Yanhong; Yan, Jieli; Jia, Xiaojun

2018-01-01

Quantum memory for the nonclassical state of light and entanglement among multiple remote quantum nodes hold promise for a large-scale quantum network, however, continuous-variable (CV) memory efficiency and entangled degree are limited due to imperfect implementation. Here we propose a scheme to deterministically entangle multiple distant atomic ensembles based on CV cavity-enhanced quantum memory. The memory efficiency can be improved with the help of cavity-enhanced electromagnetically induced transparency dynamics. A high degree of entanglement among multiple atomic ensembles can be obtained by mapping the quantum state from multiple entangled optical modes into a collection of atomic spin waves inside optical cavities. Besides being of interest in terms of unconditional entanglement among multiple macroscopic objects, our scheme paves the way towards the practical application of quantum networks.

Different optical properties in different periodic slot cavity geometrical morphologies

Science.gov (United States)

Zhou, Jing; Shen, Meng; Du, Lan; Deng, Caisong; Ni, Haibin; Wang, Ming

2016-09-01

In this paper, optical properties of two-dimensional periodic annular slot cavity arrays in hexagonal close-packing on a silica substrate are theoretically characterized by finite difference time domain (FDTD) simulation method. By simulating reflectance spectra, electric field distribution, and charge distribution, we confirm that multiple cylindrical surface plasmon resonances can be excited in annular inclined slot cavities by linearly polarized light, in which the four reflectance dips are attributed to Fabry-Perot cavity resonances in the coaxial cavity. A coaxial waveguide mode TE11 will exist in these annular cavities, and the wavelengths of these reflectance dips are effectively tailored by changing the geometrical pattern of slot cavity and the dielectric materials filled in the cavities. These resonant wavelengths are localized in annular cavities with large electric field enhancement and dissipate gradually due to metal loss. The formation of an absorption peak can be explained from the aspect of phase matching conditions. We observed that the proposed structure can be tuned over the broad spectral range of 600-4000 nm by changing the outer and inner radii of the annular gaps, gap surface topography. Meanwhile, different lengths of the cavity may cause the shift of resonance dips. Also, we study the field enhancement at different vertical locations of the slit. In addition, dielectric materials filling in the annular gaps will result in a shift of the resonance wavelengths, which make the annular cavities good candidates for refractive index sensors. The refractive index sensitivity of annular cavities can also be tuned by the geometry size and the media around the cavity. Annular cavities with novel applications can be implied as surface enhanced Raman spectra substrates, refractive index sensors, nano-lasers, and optical trappers. Project supported by the National Natural Science Foundation of China (Grant No. 61178044), the Natural Science Foundation

Electronic and optical properties of diamond/organic semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

2007-07-01

Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

Rate equation analysis and non-Hermiticity in coupled semiconductor laser arrays

Science.gov (United States)

Gao, Zihe; Johnson, Matthew T.; Choquette, Kent D.

2018-05-01

Optically coupled semiconductor laser arrays are described by coupled rate equations. The coupled mode equations and carrier densities are included in the analysis, which inherently incorporate the carrier-induced nonlinearities including gain saturation and amplitude-phase coupling. We solve the steady-state coupled rate equations and consider the cavity frequency detuning and the individual laser pump rates as the experimentally controlled variables. We show that the carrier-induced nonlinearities play a critical role in the mode control, and we identify gain contrast induced by cavity frequency detuning as a unique mechanism for mode control. Photon-mediated energy transfer between cavities is also discussed. Parity-time symmetry and exceptional points in this system are studied. Unbroken parity-time symmetry can be achieved by judiciously combining cavity detuning and unequal pump rates, while broken symmetry lies on the boundary of the optical locking region. Exceptional points are identified at the intersection between broken symmetry and unbroken parity-time symmetry.

Semiconductor Mode-Locked Lasers for Optical Communication Systems

DEFF Research Database (Denmark)

Yvind, Kresten

2003-01-01

The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of...

Low-frequency active surface plasmon optics on semiconductors

NARCIS (Netherlands)

Gómez Rivas, J.; Kuttge, M.; Kurz, H.; Haring Bolivar, P.; Sánchez-Gil, J.A.

2006-01-01

A major challenge in the development of surface plasmon optics or plasmonics is the active control of the propagation of surface plasmon polaritons (SPPs). Here, we demonstrate the feasibility of low-frequency active plasmonics using semiconductors. We show experimentally that the Bragg scattering

All-dielectric resonant cavity-enabled metals with broadband optical transparency

Science.gov (United States)

Liu, Zhengqi; Zhang, Houjiao; Liu, Xiaoshan; Pan, Pingping; Liu, Yi; Tang, Li; Liu, Guiqiang

2017-06-01

Metal films with broadband optical transparency are desirable in many optoelectronic devices, such as displays, smart windows, light-emitting diodes and infrared detectors. As bare metal is opaque to light, this issue of transparency attracts great scientific interest. In this work, we proposed and demonstrated a feasible and universal approach for achieving broadband optical transparent (BOT) metals by utilizing all-dielectric resonant cavities. Resonant dielectrics provide optical cavity modes and couple strongly with the surface plasmons of the metal film, and therefore produce a broadband near-unity optical transparent window. The relative enhancement factor (EF) of light transmission exceeds 3400% in comparison with that of pure metal film. Moreover, the transparent metal motif can be realized by other common metals including gold (Au), silver (Ag) and copper (Cu). These optical features together with the fully retained electric and mechanical properties of a natural metal suggest that it will have wide applications in optoelectronic devices.

Semi-analytical model of filtering effects in microwave phase shifters based on semiconductor optical amplifiers

DEFF Research Database (Denmark)

Chen, Yaohui; Xue, Weiqi; Öhman, Filip

2008-01-01

We present a model to interpret enhanced microwave phase shifts based on filter assisted slow and fast light effects in semiconductor optical amplifiers. The model also demonstrates the spectral phase impact of input optical signals.......We present a model to interpret enhanced microwave phase shifts based on filter assisted slow and fast light effects in semiconductor optical amplifiers. The model also demonstrates the spectral phase impact of input optical signals....

Continuous-wave optically pumped green perovskite vertical-cavity surface-emitter

KAUST Repository

Alias, Mohd Sharizal

2017-09-11

We report an optically pumped green perovskite vertical-cavity surface-emitter operating in continuous-wave (CW) with a power density threshold of ~89 kW/cm2. The device has an active region of CH3NH3PbBr3 embedded in a dielectric microcavity; this feat was achieved with a combination of optimal spectral alignment of the optical cavity modes with the perovskite optical gain, an adequate Q-factor of the microcavity, adequate thermal stability, and improved material quality with a smooth, passivated, and annealed thin active layer. Our results signify a way towards efficient CW perovskite emitter operation and electrical injection using low-cost fabrication methods for addressing monolithic optoelectronic integration and lasing in the green gap.

Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)

2016-05-03

This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

Optical trapping with Bessel beams generated from semiconductor lasers

International Nuclear Information System (INIS)

Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U

2014-01-01

In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

Ultrashort pulse-propagation effects in a semiconductor optical amplifier: Microscopic theory and experiment

DEFF Research Database (Denmark)

Hughes, S.; Borri, P.; Knorr, A.

2001-01-01

We present microscopic modeling and experimental measurements of femtosecond-pulse interactions in a semiconductor optical amplifier. Two novel nonlinear propagation effects are demonstrated: pulse breakup in the gain regime and pulse compression in the transparency regime. These propagation phen...... phenomena highlight the microscopic origin and important role of adiabatic following in semiconductor optical amplifiers. Fundamental light-matter interactions are discussed in detail and possible applications are highlighted....

Ultrafast Dynamics of Quantum-Dot Semiconductor Optical Amplifiers

DEFF Research Database (Denmark)

Poel, Mike van der; Hvam, Jørn Märcher

2007-01-01

We report on a series of experiments on the dynamical properties of quantum-dot semiconductor optical amplifiers. We show how the amplifier responds to one or several ultrafast (170 fs) pulses in rapid succession and our results demonstrate applicability and ultimate limitations to application...

Fiber Optic Based Thermometry System for Superconducting RF Cavities

Energy Technology Data Exchange (ETDEWEB)

Kochergin, Vladimir [Microxact Inc.

2013-05-06

Thermometry is recognized as the best technique to identify and characterize losses in SRF cavities. The most widely used and reliable apparatus for temperature mapping at cryogenic temperatures is based on carbon resistors (RTDs). The use of this technology on multi-cell cavities is inconvenient due to the very large number of sensors required to obtain sufficient spatial resolution. Recent developments make feasible the use of multiplexible fiber optic sensors for highly distributed temperature measurements. However, sensitivity of multiplexible cryogenic temperature sensors was found extending only to 12K at best and thus was not sufficient for SRF cavity thermometry. During the course of the project the team of MicroXact, JLab and Virginia Tech developed and demonstrated the multiplexible fiber optic sensor with adequate response below 20K. The demonstrated temperature resolution is by at least a factor of 60 better than that of the best multiplexible fiber optic temperature sensors reported to date. The clear path toward at least 10times better temperature resolution is shown. The first to date temperature distribution measurements with ~2.5mm spatial resolution was done with fiber optic sensors at 2K to4K temperatures. The repeatability and accuracy of the sensors were verified only at 183K, but at this temperature both parameters significantly exceeded the state of the art. The results of this work are expected to find a wide range of applications, since the results are enabling the whole new testing capabilities, not accessible before.

Quantum confined laser devices optical gain and recombination in semiconductors

CERN Document Server

Blood, Peter

2015-01-01

The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

Gain-assisted broadband ring cavity enhanced spectroscopy

Science.gov (United States)

Selim, Mahmoud A.; Adib, George A.; Sabry, Yasser M.; Khalil, Diaa

2017-02-01

Incoherent broadband cavity enhanced spectroscopy can significantly increase the effective path length of light-matter interaction to detect weak absorption lines over broad spectral range, for instance to detect gases in confined environments. Broadband cavity enhancement can be based on the decay time or the intensity drop technique. Decay time measurement is based on using tunable laser source that is expensive and suffers from long scan time. Intensity dependent measurement is usually reported based on broadband source using Fabry-Perot cavity, enabling short measurement time but suffers from the alignment tolerance of the cavity and the cavity insertion loss. In this work we overcome these challenges by using an alignment-free ring cavity made of an optical fiber loop and a directional coupler, while having a gain medium pumped below the lasing threshold to improve the finesse and reduce the insertion loss. Acetylene (C2H2) gas absorption is measured around 1535 nm wavelength using a semiconductor optical amplifier (SOA) gain medium. The system is analyzed for different ring resonator forward coupling coefficient and loses, including the 3-cm long gas cell insertion loss and fiber connector losses used in the experimental verification. The experimental results are obtained for a coupler ratio of 90/10 and a fiber length of 4 m. The broadband source is the amplified spontaneous emission of another SOA and the output is measured using a 70pm-resolution optical spectrum analyzer. The absorption depth and the effective interaction length are improved about an order of magnitude compared to the direct absorption of the gas cell. The presented technique provides an engineering method to improve the finesse and, consequently the effective length, while relaxing the technological constraints on the high reflectivity mirrors and free-space cavity alignment.

Automated optical inspection and image analysis of superconducting radio-frequency cavities

Science.gov (United States)

Wenskat, M.

2017-05-01

The inner surface of superconducting cavities plays a crucial role to achieve highest accelerating fields and low losses. For an investigation of this inner surface of more than 100 cavities within the cavity fabrication for the European XFEL and the ILC HiGrade Research Project, an optical inspection robot OBACHT was constructed. To analyze up to 2325 images per cavity, an image processing and analysis code was developed and new variables to describe the cavity surface were obtained. The accuracy of this code is up to 97 % and the positive predictive value (PPV) 99 % within the resolution of 15.63 μm. The optical obtained surface roughness is in agreement with standard profilometric methods. The image analysis algorithm identified and quantified vendor specific fabrication properties as the electron beam welding speed and the different surface roughness due to the different chemical treatments. In addition, a correlation of ρ = -0.93 with a significance of 6 σ between an obtained surface variable and the maximal accelerating field was found.

Digitally tunable dual wavelength emission from semiconductor ring lasers with filtered optical feedback

International Nuclear Information System (INIS)

Khoder, Mulham; Verschaffelt, Guy; Nguimdo, Romain Modeste; Danckaert, Jan; Leijtens, Xaveer; Bolk, Jeroen

2013-01-01

We report on a novel integrated approach to obtain dual wavelength emission from a semiconductor laser based on on-chip filtered optical feedback. Using this approach, we show experiments and numerical simulations of dual wavelength emission of a semiconductor ring laser. The filtered optical feedback is realized on-chip by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback strength of each wavelength channel independently. By tuning the current injected into each of the amplifiers, we can effectively cancel the gain difference between the wavelength channels due to fabrication and material dichroism, thus resulting in stable dual wavelength emission. We also explore the accuracy needed in the operational parameters to maintain this dual wavelength emission. (letter)

Resonantly enhanced nonlinear optics in semiconductor quantum wells: An application to sensitive infrared detection

International Nuclear Information System (INIS)

Yelin, S.F.; Hemmer, P.R.

2002-01-01

A novel class of coherent nonlinear optical phenomena, involving induced transparency in semiconductor quantum wells, is considered in the context of a particular application to sensitive long-wavelength infrared detection. It is shown that the strongest decoherence mechanisms can be suppressed or mitigated, resulting in substantial enhancement of nonlinear optical effects in semiconductor quantum wells

A mode-locked external-cavity quantum-dot laser with a variable repetition rate

International Nuclear Information System (INIS)

Wu Jian; Jin Peng; Li Xin-Kun; Wei Heng; Wu Yan-Hua; Wang Fei-Fei; Chen Hong-Mei; Wu Ju; Wang Zhan-Guo

2013-01-01

A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest −3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

Science.gov (United States)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-04-01

A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

Active material, optical mode and cavity impact on nanoscale electro-optic modulation performance

Science.gov (United States)

Amin, Rubab; Suer, Can; Ma, Zhizhen; Sarpkaya, Ibrahim; Khurgin, Jacob B.; Agarwal, Ritesh; Sorger, Volker J.

2017-10-01

Electro-optic modulation is a key function in optical data communication and possible future optical compute engines. The performance of modulators intricately depends on the interaction between the actively modulated material and the propagating waveguide mode. While a variety of high-performance modulators have been demonstrated, no comprehensive picture of what factors are most responsible for high performance has emerged so far. Here we report the first systematic and comprehensive analytical and computational investigation for high-performance compact on-chip electro-optic modulators by considering emerging active materials, model considerations and cavity feedback at the nanoscale. We discover that the delicate interplay between the material characteristics and the optical mode properties plays a key role in defining the modulator performance. Based on physical tradeoffs between index modulation, loss, optical confinement factors and slow-light effects, we find that there exist combinations of bias, material and optical mode that yield efficient phase or amplitude modulation with acceptable insertion loss. Furthermore, we show how material properties in the epsilon near zero regime enable reduction of length by as much as by 15 times. Lastly, we introduce and apply a cavity-based electro-optic modulator figure of merit, Δλ/Δα, relating obtainable resonance tuning via phase shifting relative to the incurred losses due to the fundamental Kramers-Kronig relations suggesting optimized device operating regions with optimized modulation-to-loss tradeoffs. This work paves the way for a holistic design rule of electro-optic modulators for high-density on-chip integration.

Two-section semiconductor optical amplifier used as an efficient channel dropping node

DEFF Research Database (Denmark)

Jørgensen, Carsten; Storkfelt, Niels; Durhuus, T.

1992-01-01

High responsivity in a two-section semiconductor optical amplifier/detector, serving as a channel dropping mode is described. A simple receiver constructed using a 50 Ω amplifier with a sensitivity of -30.2 dBm at 140 Mb/s is demonstrated......High responsivity in a two-section semiconductor optical amplifier/detector, serving as a channel dropping mode is described. A simple receiver constructed using a 50 Ω amplifier with a sensitivity of -30.2 dBm at 140 Mb/s is demonstrated...

Synthesis and optical properties of novel organic-inorganic hybrid nanolayer structure semiconductors

Energy Technology Data Exchange (ETDEWEB)

Zhang Sanjun; Lanty, Gaetan; Lauret, Jean-Sebastien [Laboratoire de Photonique Quantique et Moleculaire de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France); Deleporte, Emmanuelle, E-mail: Emmanuelle.Deleporte@lpqm.ens-cachan.fr [Laboratoire de Photonique Quantique et Moleculaire de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France); Audebert, Pierre; Galmiche, Laurent [Laboratoire de Photophysique et Photochimie Supramoleculaires et Macromoleculaires de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France)

2009-06-15

We report on the synthesis of some novel organic-inorganic hybrid 2D perovskite semiconductors (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. These semiconductors are self-assembled intercalation nanolayers and have a multi-quantum-well energy level structure. We systematically vary the characteristic of organic groups (R-(CH{sub 2}){sub n}NH{sub 3}{sup +}) to study the relationship between their structures and the optical properties of (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. From optical absorption and photoluminescence spectroscopy experiments performed on series of samples, we find some trends of choosing the organic groups to improve the optical performance of (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. A new organic group, which allows synthesis of nanolayer perovskite semiconductors with quite high photoluminescence efficiency and better long-term stability, has been found.

Nonlinear optical studies in semiconductor-doped glasses under ...

Indian Academy of Sciences (India)

Abstract. Nonlinear optical studies in semiconductor-doped glasses (SDGs) are per- formed under femtosecond laser pulse excitation. Z-scan experiments with 800 nm wave- length pulses are used to excite SDG samples in the resonance and non-resonance regimes. Schott colour glass filter OG 515 shows stronger ...

Optical surface properties and their RF limitations of European XFEL cavities

Science.gov (United States)

Wenskat, Marc

2017-10-01

The inner surface of superconducting cavities plays a crucial role to achieve highest accelerating fields and low losses. The industrial fabrication of cavities for the European X-ray Free Electron Laser and the International Linear Collider HiGrade Research Project allowed for an investigation of this interplay. For the serial inspection of the inner surface, the optical inspection robot ’optical bench for automated cavity inspection with high resolution on short timescales’ OBACHT was constructed and to analyze the large amount of data, represented in the images of the inner surface, an image processing and analysis code was developed and new variables to describe the cavity surface were obtained. This quantitative analysis identified vendor-specific surface properties which allow the performance of quality control and assurance during production. In addition, a strong negative correlation of ρ =-0.93 with a significance of 6 σ of the integrated grain boundary area \\sum {A} versus the maximal achievable accelerating field {{E}}{acc,\\max } has been found.

Resonant cavity light-emitting diodes based on dielectric passive cavity structures

Science.gov (United States)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

2017-02-01

A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5�

The system of enclosed optical cavities as a tool for laser photons storing

International Nuclear Information System (INIS)

Androsov, V.P.; Karnaukhov, I.M.; Telegin, Yu.N.

2004-01-01

The calculation of the system consisting of two optical cavities enclosed one into another is performed in the plane-wave approximation. It is shown that under definite conditions one can obtain an enhancement of the electromagnetic field in the internal cavity as compared to the case of direct excitation of the cavity with an electromagnetic wave of the same amplitude. The comparative analysis of these two approaches is carried out. We suppose to apply the proposed system with moderate-reflectivity mirrors (R=0.99) for accumulating laser photons in the optical cavity of the X-ray source LESR-N100 based on Compton scattering of the laser beam on relativistic electrons stored in the ring

Optical characterization of semiconductors infrared, Raman, and photoluminescence spectroscopy

CERN Document Server

Perkowitz, Sidney

1993-01-01

This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial sci

Entangling optical and microwave cavity modes by means of a nanomechanical resonator

Energy Technology Data Exchange (ETDEWEB)

Barzanjeh, Sh. [Department of Physics, Faculty of Science, University of Isfahan, Hezar Jerib, 81746-73441 Isfahan (Iran, Islamic Republic of); School of Science and Technology, Physics Division, Universita di Camerino, I-62032 Camerino, Macerata (Italy); Vitali, D.; Tombesi, P. [School of Science and Technology, Physics Division, Universita di Camerino, I-62032 Camerino, Macerata (Italy); Milburn, G. J. [Centre for Engineered Quantum Systems, School of Physical Sciences, University of Queensland, Saint Lucia, Queensland 4072 (Australia)

2011-10-15

We propose a scheme that is able to generate stationary continuous-variable entanglement between an optical and a microwave cavity mode by means of their common interaction with a nanomechanical resonator. We show that when both cavities are intensely driven, one can generate bipartite entanglement between any pair of the tripartite system, and that, due to entanglement sharing, optical-microwave entanglement is efficiently generated at the expense of microwave-mechanical and optomechanical entanglement.

Entangling optical and microwave cavity modes by means of a nanomechanical resonator

International Nuclear Information System (INIS)

Barzanjeh, Sh.; Vitali, D.; Tombesi, P.; Milburn, G. J.

2011-01-01

We propose a scheme that is able to generate stationary continuous-variable entanglement between an optical and a microwave cavity mode by means of their common interaction with a nanomechanical resonator. We show that when both cavities are intensely driven, one can generate bipartite entanglement between any pair of the tripartite system, and that, due to entanglement sharing, optical-microwave entanglement is efficiently generated at the expense of microwave-mechanical and optomechanical entanglement.

Cavity assisted measurements of heat and work in optical lattices

Directory of Open Access Journals (Sweden)

Louis Villa

2018-01-01

Full Text Available We propose a method to experimentally measure the internal energy of a system of ultracold atoms trapped in optical lattices by coupling them to the fields of two optical cavities. We show that the tunnelling and self-interaction terms of the one-dimensional Bose-Hubbard Hamiltonian can be mapped to the field and photon number of each cavity, respectively. We compare the energy estimated using this method with numerical results obtained using the density matrix renormalisation group algorithm. Our method can be employed for the assessment of power and efficiency of thermal machines whose working substance is a strongly correlated many-body system.

Photonic processing and realization of an all-optical digital comparator based on semiconductor optical amplifiers

Science.gov (United States)

Singh, Simranjit; Kaur, Ramandeep; Kaler, Rajinder Singh

2015-01-01

A module of an all-optical 2-bit comparator is analyzed and implemented using semiconductor optical amplifiers (SOAs). By employing SOA-based cross phase modulation, the optical XNOR logic is used to get an A=B output signal, where as AB¯ and A¯B> logics operations are used to realize A>B and Aoperations results along with the wide open eye diagrams are obtained. It is suggested that the proposed system would be promising in all-optical high speed networks and computing systems.

Optical properties of hybrid semiconductor-metal structures

Energy Technology Data Exchange (ETDEWEB)

Kreilkamp, L.E.; Pohl, M.; Akimov, I.A.; Yakovlev, D.R.; Bayer, M. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Belotelov, V.I.; Zvezdin, A.K. [A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, 119992 Moscow (Russian Federation); Karczewski, G.; Wojtowicz, T. [Institute of Physics, Polish Academy of Sciences, 02668 Warsaw (Poland); Rudzinski, A.; Kahl, M. [Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund (Germany)

2012-07-01

We study the optical properties of hybrid nanostructures comprising a semiconductor CdTe quantum well (QW) separated by a thin CdMgTe cap layer of 40 nm from a patterned gold film. The CdTe/CdMgTe QW structure with a well width of 10nm was grown by molecular beam epitaxy. The one-dimensional periodic gold films on top were made using e-beam lithography and lift-off process. The investigated structures can be considered as plasmonic crystals because the metal films attached to the semiconductor are patterned with a period in the range from 475 to 600 nm, which is comparable to the surface plasmon-polariton (SPP) wavelength. Angle dependent reflection spectra at room temperature clearly show plasmonic resonances. PL spectra taken at low temperatures of about 10 K under below- and above-barrier illumination show significant modifications compared to the unstructured QW sample. The number of emission lines and their position shift change depending on the excitation energy. The role of exciton-SPP coupling and Schottky barrier at the semiconductor-metal interface are discussed.

Storage of laser pulses in a Fabry-Perot optical cavity for high flux x-ray

International Nuclear Information System (INIS)

Takezawa, K.; Honda, Y.; Sasao, N.; Araki, S.; Higashi, Y.; Taniguchi, T.; Urakawa, J.; Nomura, M.; Sakai, H.

2004-01-01

We have a plan to produce a high flux x-ray for medical use by using a Fabry-Perot optical cavity in which the lower pulses from a mode-locked laser are stored and enhanced. In this plan, the X-ray is produced from the Compton scattering of electrons in a storage ring with the laser light in the optical cavity. In order to increase X-ray flux, high power laser light is necessary. We show the enhancement of the laser power from the model locked laser with a Fabry-Perot optical cavity. (author)

Experimental and theoretical investigation of semiconductor optical amplifier (SOA) based all-optical switches

DEFF Research Database (Denmark)

Nielsen, Mads Lønstrup

2004-01-01

This thesis analyzes semiconductor optical amplifier (SOA) based all-optical switches experimentally and through numerical simulations. These devices are candidates for optical signal processing functionalities such as wavelength conversion, regeneration, and logic processing in future transparent......, consisting of an SOA and an asymmetric MZI filter, is analyzed in the small-signal regime, and the obtainable modulation bandwidth is expressed analytically. A new optical spectrum approach to small signal analysis is introduced, and is used to assess the bandwidth enhancing effect of different optical...... filters, as well the impact of the filter phase response. Experiments at 40 Gb/s verify the predictions of the small-signal analysis. Wavelength conversion is demonstrated experimentally at 40 Gb/s using a simple filtering-assisted scheme with an ultra-low optical switching energy, and up to 80 Gb...

Electronic displays using optically pumped luminescent semiconductor nanocrystals

Science.gov (United States)

Weiss, Shimon [Pinole, CA; Schlamp, Michael C [Plainsboro, NJ; Alivisatos, A Paul [Oakland, CA

2011-09-27

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

High stable electro-optical cavity-dumped Nd:YAG laser

International Nuclear Information System (INIS)

Ma, Y F; Yu, X; Zhang, J W; Li, H

2012-01-01

In this paper, an electro-optical cavity-dumped 10 Hz Nd:Y 3 Al 5 O 12 (Nd:YAG) laser was demonstrated. We designed an optimized high stable concavo-convex cavity according to the thermal-insensitive theory that the cavity could be deep stable and be insensitive to the change of thermal lens of laser crystal when g 1 *g 2 = 1/2. The output pulse width was constant at 6.0±0.1 ns. The maximum output energy was 40 mJ. The laser had outstanding stability of output characteristics. The fluctuations of average output energy and divergence angle within 8 cycles were 1.24% and 0.06 mrad, respectively

All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

Science.gov (United States)

Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

2006-09-01

By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Klimov, V.; McBranch, D.; Schwarz, C.

1998-08-10

Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

Development and experimental evaluation of an optical sensor for aerosol particle characterization

Energy Technology Data Exchange (ETDEWEB)

Somesfalean, G.

1998-03-01

A sensor for individual aerosol particle characterization, based on a single-mode semiconductor laser coupled to an external cavity is presented. The light emitting semiconductor laser acts as a sensitive optical detector itself, and the whole system has the advantage of using conventional optical components and providing a compact set-up. Aerosol particles moving through the sensing volume, which is located in the external cavity of a semiconductor laser, scatter and absorb light. Thereby they act as small disturbances on the electromagnetic field inside the dynamic multi-cavity laser system. From the temporal variation of the output light intensity, information about the number, velocity, size, and refractive index of the aerosol particles can be derived. The diffracted light in the near-forward scattering direction is collected and Fourier-transformed by a lens, and subsequently imaged on a CCD camera. The recorded Fraunhofer diffraction pattern provides information about the projected area of the scattering particle, and can thus be used to determine the size and the shape of aerosol particles. The sensor has been tested on fibers which are of interest in the field of working environment monitoring. The recorded output intensity variation has been analysed, and the relationship between the shape and the size of each fibre, and the resulting scattering profiles has been investigated. A simple one-dimensional model for the optical feedback variation due to the light-particle interaction in the external cavity is also discussed 34 refs, 26 figs, 6 tabs

Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser

Directory of Open Access Journals (Sweden)

L. Li

2012-12-01

Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.

Dual-resonances approach to broadband cavity-assisted optical signal processing beyond the carrier relaxation rate

DEFF Research Database (Denmark)

Heuck, Mikkel; Kristensen, Philip Trøst; Mørk, Jesper

2014-01-01

We propose and analyze a differential control scheme for cavity-enhanced optical signal processing devices based on carrier nonlinearities. The scheme relies on two optical cavities to increase the bandwidth beyond the limit given by the slowest carrier relaxation rate of the medium. Practical...

Development of an optical inspection bench for the inspection of internal surfaces of 650 MHz SCRF cavities

International Nuclear Information System (INIS)

Kokil, S.V.; Kane, G.V.; Raghavendra, S.; Chauhan, S.K.; Rajpoot, D.S.; Oraon, B.; Om Prakash; Joshi, S.C.

2015-01-01

An optical inspection system has been developed for inspection of internal surfaces of 650 MHz superconducting RF cavities. The cavity parts are welded either using Electron Beam or Laser Beam Welding for making a good quality of weld joints. Surface defects like pits, scratches, welding spatters etc. on the internal surface of the cavity deteriorates cavity performance. Surface quality of the cavity equator joint plays an important role in the cavity performance. To study the quality of equator surface, the inspection bench offers high resolution images with a linear resolution of 45 m/pixel at a distance of ∼200 mm. The bench comprises of two major sub-systems, optical imaging system and cavity positioning system. A digital camera and multi coloured illumination system is used to obtain high resolution images. The camera is mounted inside a long cylindrical tube. The cylindrical tube can be inserted into a SCRF cavity. The length of the cylinder is long enough to inspect five-cell 650 MHz SCRF cavity. The cavity is placed on a set of PTFE rollers, which are mounted on a trolley. The cavity can be moved linearly with the help of ball screw-servomotor mechanism. The camera along with cylindrical tube can be rotated around its axis with a stepper motor to scan the cavity's internal surface. The paper presents the details about the optical inspection bench and optical inspection results. (author)

Regularized linearization for quantum nonlinear optical cavities: application to degenerate optical parametric oscillators.

Science.gov (United States)

Navarrete-Benlloch, Carlos; Roldán, Eugenio; Chang, Yue; Shi, Tao

2014-10-06

Nonlinear optical cavities are crucial both in classical and quantum optics; in particular, nowadays optical parametric oscillators are one of the most versatile and tunable sources of coherent light, as well as the sources of the highest quality quantum-correlated light in the continuous variable regime. Being nonlinear systems, they can be driven through critical points in which a solution ceases to exist in favour of a new one, and it is close to these points where quantum correlations are the strongest. The simplest description of such systems consists in writing the quantum fields as the classical part plus some quantum fluctuations, linearizing then the dynamical equations with respect to the latter; however, such an approach breaks down close to critical points, where it provides unphysical predictions such as infinite photon numbers. On the other hand, techniques going beyond the simple linear description become too complicated especially regarding the evaluation of two-time correlators, which are of major importance to compute observables outside the cavity. In this article we provide a regularized linear description of nonlinear cavities, that is, a linearization procedure yielding physical results, taking the degenerate optical parametric oscillator as the guiding example. The method, which we call self-consistent linearization, is shown to be equivalent to a general Gaussian ansatz for the state of the system, and we compare its predictions with those obtained with available exact (or quasi-exact) methods. Apart from its operational value, we believe that our work is valuable also from a fundamental point of view, especially in connection to the question of how far linearized or Gaussian theories can be pushed to describe nonlinear dissipative systems which have access to non-Gaussian states.

Emerging applications for vertical cavity surface emitting lasers

International Nuclear Information System (INIS)

Harris, J S; O'sullivan, T; Sarmiento, T; Lee, M M; Vo, S

2011-01-01

Vertical cavity surface emitting lasers (VCSELs) emitting at 850 nm have experienced explosive growth in the past decade because of their many attractive optical features and incredibly low-cost manufacturability. This review reviews the foundations for GaAs-based VCSEL technology as well as the materials and device challenges to extend the operating wavelength to both shorter and longer wavelengths. We discuss some of the applications that are enabled by the integration of VCSELs with both active and passive semiconductor elements for telecommunications, both in vivo and in vitro biosensing, high-density optical storage and imaging at wavelengths much less than the diffraction limit of light

Nonlinear optical effects in pure and N-doped semiconductors

International Nuclear Information System (INIS)

Donlagic, N.S.

2000-01-01

Over the last decades, the nonlinear optical properties of condensed matter systems have been an attractive and fruitful field of research. While the linear response functions of solids provide information about the elementary excitations of the systems, nonlinear optical experiments give insight into the dynamics of the fundamental many-body processes which are initiated by the external excitations. Stimulated by the experimental results, new theoretical concepts and methods have been developed in order to relate the observed phenomena to the microscopic properties of the investigated materials. The present work deals with the study of the nonlinear dynamics of the optical interband polarization in pure and n-doped semiconductors.In the first part of the thesis, the relaxation behavior of optically excited electron-hole pairs in a one-dimensional semiconductor, which are coupled to longitudinal optical phonons with an initial lattice temperature T>0, is studied with the help of quantum kinetic equations. Apart from Hartree-Fock-like Coulomb contributions, these equations contain additional Coulomb terms, the so-called vertex corrections, by which the influence of the electron-electron interaction on the electron-phonon scattering processes is taken into account. The numerical studies indicate that the vertex corrections are essential for a correct description of the excitonic dynamics.In the second part of the thesis, the attention is shifted to the characteristics of the optical response of a one-dimensional n-doped two-band semiconductor whose conduction band has been linearized with respect to the two Fermi points. Due to the linearization it is possible to calculate the linear and nonlinear response functions of the interacting electron system exactly. These response functions are then used in order to determine the linear absorption spectrum and the time-integrated signal of a degenerated four-wave-mixing experiment. It is shown that the well-known features

Analytical models of optical response in one-dimensional semiconductors

International Nuclear Information System (INIS)

Pedersen, Thomas Garm

2015-01-01

The quantum mechanical description of the optical properties of crystalline materials typically requires extensive numerical computation. Including excitonic and non-perturbative field effects adds to the complexity. In one dimension, however, the analysis simplifies and optical spectra can be computed exactly. In this paper, we apply the Wannier exciton formalism to derive analytical expressions for the optical response in four cases of increasing complexity. Thus, we start from free carriers and, in turn, switch on electrostatic fields and electron–hole attraction and, finally, analyze the combined influence of these effects. In addition, the optical response of impurity-localized excitons is discussed. - Highlights: • Optical response of one-dimensional semiconductors including excitons. • Analytical model of excitonic Franz–Keldysh effect. • Computation of optical response of impurity-localized excitons

Offline estimation of decay time for an optical cavity with a low pass filter cavity model.

Science.gov (United States)

Kallapur, Abhijit G; Boyson, Toby K; Petersen, Ian R; Harb, Charles C

2012-08-01

This Letter presents offline estimation results for the decay-time constant for an experimental Fabry-Perot optical cavity for cavity ring-down spectroscopy (CRDS). The cavity dynamics are modeled in terms of a low pass filter (LPF) with unity DC gain. This model is used by an extended Kalman filter (EKF) along with the recorded light intensity at the output of the cavity in order to estimate the decay-time constant. The estimation results using the LPF cavity model are compared to those obtained using the quadrature model for the cavity presented in previous work by Kallapur et al. The estimation process derived using the LPF model comprises two states as opposed to three states in the quadrature model. When considering the EKF, this means propagating two states and a (2×2) covariance matrix using the LPF model, as opposed to propagating three states and a (3×3) covariance matrix using the quadrature model. This gives the former model a computational advantage over the latter and leads to faster execution times for the corresponding EKF. It is shown in this Letter that the LPF model for the cavity with two filter states is computationally more efficient, converges faster, and is hence a more suitable method than the three-state quadrature model presented in previous work for real-time estimation of the decay-time constant for the cavity.

Piezoelectric deformable mirror for intra-cavity laser adaptive optics.

CSIR Research Space (South Africa)

Long, CS

2008-03-01

Full Text Available This paper describes the development of a deformable mirror to be used in conjunction with diffractive optical elements inside a laser cavity. A prototype piezoelectric unimorph adaptive mirror was developed to correct for time dependent phase...

NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

International Nuclear Information System (INIS)

Reshak, A.H.; Khan, Saleem Ayaz; Kamarudin, H.; Bila, Jiri

2014-01-01

Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor

NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

Energy Technology Data Exchange (ETDEWEB)

Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Khan, Saleem Ayaz, E-mail: sayaz_usb@yahoo.com [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Kamarudin, H. [Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bila, Jiri [Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, 166 07 Prague 6 (Czech Republic)

2014-01-05

Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor.

All-optical wavelength conversion at bit rates above 10 Gb/s using semiconductor optical amplifiers

DEFF Research Database (Denmark)

Jørgensen, Carsten; Danielsen, Søren Lykke; Stubkjær, Kristian

1997-01-01

This work assesses the prospects for high-speed all-optical wavelength conversion using the simple optical interaction with the gain in semiconductor optical amplifiers (SOAs) via the interband carrier recombination. Operation and design guidelines for conversion speeds above 10 Gb/s are described...... and the various tradeoffs are discussed. Experiments at bit rates up to 40 Gb/s are presented for both cross-gain modulation (XGM) and cross-phase modulation (XPM) in SOAs demonstrating the high-speed capability of these techniques...

Controllable optical bistability in a three-mode optomechanical system with atom-cavity-mirror couplings

Science.gov (United States)

Chen, Bin; Wang, Xiao-Fang; Yan, Jia-Kai; Zhu, Xiao-Fei; Jiang, Cheng

2018-01-01

We theoretically investigate the optical bistable behavior in a three-mode optomechanical system with atom-cavity-mirror couplings. The effects of the cavity-pump detuning and the pump power on the bistable behavior are discussed detailedly, the impacts of the atom-pump detuning and the atom-cavity coupling strength on the bistability of the system are also explored, and the influences of the cavity-resonator coupling strength and the cavity decay rate are also taken into consideration. The numerical results demonstrate that by tuning these parameters the bistable behavior of the system can be freely switched on or off, and the threshold of the pump power for the bistability as well as the bistable region width can also be effectively controlled. These results can find potential applications in optical bistable switch in the quantum information processing.

Analog direct-modulation behavior of semiconductor laser transmitters using optical FM demodulation

NARCIS (Netherlands)

Yabre, G.S.

1998-01-01

In this paper, we report a theoretical investigation of the analog modulation performance of a semiconductor laser transmitter which employs the direct optical FM demodulation. This analysis is based on the rate equations in which Langevin noise functions are included. The optical FM response has

Fast optical recording media based on semiconductor nanostructures for image recording and processing

International Nuclear Information System (INIS)

Kasherininov, P. G.; Tomasov, A. A.

2008-01-01

Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10 6 cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10 -2 V/cm 2 , and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

Adiabatic transfer of energy fluctuations between membranes inside an optical cavity

Science.gov (United States)

Garg, Devender; Chauhan, Anil K.; Biswas, Asoka

2017-08-01

A scheme is presented for the adiabatic transfer of average fluctuations in the phonon number between two membranes in an optical cavity. We show that by driving the cavity modes with external time-delayed pulses, one can obtain an effect analogous to stimulated Raman adiabatic passage in the atomic systems. The adiabatic transfer of fluctuations from one membrane to the other is attained through a "dark" mode, which is robust against decay of the mediating cavity mode. The results are supported with analytical and numerical calculations with experimentally feasible parameters.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

High speed all optical logic gates based on quantum dot semiconductor optical amplifiers.

Science.gov (United States)

Ma, Shaozhen; Chen, Zhe; Sun, Hongzhi; Dutta, Niloy K

2010-03-29

A scheme to realize all-optical Boolean logic functions AND, XOR and NOT using semiconductor optical amplifiers with quantum-dot active layers is studied. nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations scheme. Results show with QD excited state and wetting layer serving as dual-reservoir of carriers, as well as the ultra fast carrier relaxation of the QD device, this scheme is suitable for high speed Boolean logic operations. Logic operation can be carried out up to speed of 250 Gb/s.

Self-cavity lasing in optically pumped single crystals of p-sexiphenyl

International Nuclear Information System (INIS)

Yanagi, Hisao; Tamura, Kenji; Sasaki, Fumio

2016-01-01

Organic single-crystal self-cavities are prepared by solution growth of p-sexiphenyl (p-6P). Based on Fabry-Pérot feedback inside a quasi-lozenge-shaped platelet crystal, edge-emitting laser is obtained under optical pumping. The multimode lasing band appears at the 0-1 or 0-2 vibronic progressions depending on the excitation conditions which affect the self-absorption effect. Cavity-size dependence of amplified spontaneous emission (ASE) is investigated with laser-etched single crystals of p-6P. As the cavity length of square-shaped crystal is reduced from 100 to 10 μm, ASE threshold fluence is decreased probably due to size-dependent light confinement in the crystal cavity.

Quantum theory of the optical and electronic properties of semiconductors

CERN Document Server

Haug, Hartmut

1990-01-01

The current technological revolution in the development of computing devices has created a demand for a textbook on the quantum theory of the electronic and optical properties of semiconductors and semiconductor devices. This book successfully fulfills this need. Based on lectures given by the authors, it is a comprehensive introduction for researchers or graduate-level students to the subject. Certain sections can also serve as a graduate-level textbook for use in solid state physics courses or for more specialized courses. The final chapters establish a direct link to current research in sem

Scanning near-field optical microscopy of quantum dots in photonic crystal cavities

Energy Technology Data Exchange (ETDEWEB)

Skacel, Matthias; Fiore, Andrea [COBRA Research Institute, Technical University Eindhoven, Den Dolech 2, 5600 MB Eindhoven (Netherlands); Prancardi, Marco; Gerardino, Annamaria [Institute of Photonics and Nanotechnology, CNR, via del Cineto Romano 42, 00156 Roma (Italy); Alloing, Blandine; Li Lianhe, E-mail: m.s.skacel@tue.n [Institute of Photonics and Quantum Electronics, EPFL, CH-1015 Lausanne (Switzerland)

2010-09-01

Nanophotonic devices are of major interest for research and future quantum communication applications. Due to their nanometer feature size the resolution limit of far-field microscopy poses a limitation on the characterization of their optical properties. A method to overcome the resolution limit is the Scanning Near-Field Optical Microscope (SNOM). By approaching a fiber tip into the close vicinity of the sample the optical emission in the near-field regime is collected. This way of collecting the light is not affected by the diffraction limit. We employ a low temperature SNOM to investigate the photoluminescence of InAs QDs emitting at 1300nm wavelength embedded in photonic crystal cavities. At each location of an image scan the tip is stopped and a spectrum is acquired. We then plot maps of the photoluminescence for each wavelength. With this instrument it is now possible to directly observe the coupling of QDs to photonic crystal cavities both spectrally and spatially. We show first results of photoluminescence mapping of InAs QDs in photonic crystal cavities.

1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

OpenAIRE

Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

2000-01-01

We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

Demultiplexing of OTDM-DPSK signals based on a single semiconductor optical amplifier and optical filtering

DEFF Research Database (Denmark)

Xu, Jing; Ding, Yunhong; Peucheret, Christophe

2011-01-01

We propose and demonstrate the use of a single semiconductor optical amplifier (SOA) and optical filtering to time demultiplex tributaries from an optical time division multiplexing-differential phase shift keying (OTDM-DPSK) signal. The scheme takes advantage of the fact that phase variations...... added to the target channel by cross-phase modulation from the control signal are effectively subtracted in the differential demodulation scheme employed for DPSK signals. Demultiplexing from 80 to 40 Gbit=s is demonstrated with moderate power penalty using an SOA with recovery time twice as long...

Microscopic investigations of the terahertz and the extreme nonlinear optical response of semiconductors

Energy Technology Data Exchange (ETDEWEB)

Golde, Daniel

2010-06-22

In the major part of this Thesis, we discuss the linear THz response of semiconductor nanostructures based on a microscopic theory. Here, two different problems are investigated: intersubband transitions in optically excited quantum wells and the THz plasma response of two-dimensional systems. In the latter case, we analyze the response of correlated electron and electron-hole plasmas. Extracting the plasma frequency from the linear response, we find significant deviations from the commonly accepted two-dimensional plasma frequency. Besides analyzing the pure plasma response, we also consider an intermediate regime where the response of the electron-hole plasma consists of a mixture of plasma contributions and excitonic transitions. A quantitative experiment-theory comparison provides novel insights into the behavior of the system at the transition from one regime to the other. The discussion of the intersubband transitions mainly focuses on the coherent superposition of the responses from true THz transitions and the ponderomotively accelerated carriers. We present a simple method to directly identify ponderomotive effects in the linear THz response. Apart from that, the excitonic contributions to intersubband transitions are investigated. The last part of the present Thesis deals with a completely different regime. Here, the extreme nonlinear optical response of low-dimensional semiconductor structures is discussed. Formally, extreme nonlinear optics describes the regime of light-matter interaction where the exciting field is strong enough such that the Rabi frequency is comparable to or larger than the characteristic transition frequency of the investigated system. Here, the Rabi frequency is given by the product of the electrical field strength and the dipole-matrix element of the respective transition. Theoretical investigations have predicted a large number of novel nonlinear effects arising for such strong excitations. Some of them have been observed in

Cold atoms in optical cavities and lattices

International Nuclear Information System (INIS)

Horak, P.

1996-11-01

The thesis is organized in three chapters covering different aspects of the interaction of atoms and light in the framework of theoretical quantum optics. In chapter 1 a special case of a microscopic laser where one or two atoms interact with several quantized cavity modes is discussed. In particular I investigate the properties of the light field created in one of the cavity modes. It is shown that a single-atom model already predicts average photon numbers in agreement with a semiclassical many-atom theory. The two-atom model exhibits additional collective features, such as superradiance and subradiance. In chapter 2 effects of the photon recoil on cold atoms in the limit of long-lived atomic transitions are investigated. First, I demonstrate that, in principle, relying on this scheme, a continuous-wave laser in the ultraviolet frequency domain could be established. Second, the splitting of an atomic beam into two coherent subbeams is discussed within the same scheme. Such beamsplitters play an important role in high-precision measurements using atomic interferometers. Finally, chapter 3 deals with cooling and trapping of atoms by the interaction with laser light. I discuss the properties and the light scattering of atoms trapped in a new light field configuration, a so-called dark optical superlattice. In principle, such systems allow the trapping of more than one atom in the ground state of a single optical potential well. This could give rise to the observation of e.g. atom-atom interactions and quantum statistical effects. (author)

Bistability and self-oscillations effects in a polariton-laser semiconductor microcavity

International Nuclear Information System (INIS)

Cotta, E A; Matinaga, F M

2007-01-01

We report an experimental observation of polaritonic optical bistability of the laser emission in a planar semiconductor microcavity with a 100 0 A GaAs single quantum well in the strong-coupling regime. The bistability curves show crossings that indicate a competition between a Kerr-like effect induced by the polariton population and thermal effects. Associated with the bistability, laser-like emission occurs at the bare cavity mode

Non-equilibrium carrier efect in the optical properties of semiconductors

International Nuclear Information System (INIS)

Teschke, O.

1980-01-01

The time-resolved reflectivity of picosecond pulses from optically excited carrier distributions can provide important information about the energy relaxation rates of hot electrons and holes in semiconductors. the basic optical properties of non-equilibrium carrier distributions of GaAs are discussed. A semi-empirical analysis of the reflectivity spectrum is presented and the contributions of different effects are estimated. The results are in qualitative agreement with recent experiments employing dye lasers. (Author) [pt

Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Erbert, G.; Sumpf, B.

2010-01-01

A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

Quantum phases of spinful Fermi gases in optical cavities

Science.gov (United States)

Colella, E.; Citro, R.; Barsanti, M.; Rossini, D.; Chiofalo, M.-L.

2018-04-01

We explore the quantum phases emerging from the interplay between spin and motional degrees of freedom of a one-dimensional quantum fluid of spinful fermionic atoms, effectively interacting via a photon-mediating mechanism with tunable sign and strength g , as it can be realized in present-day experiments with optical cavities. We find the emergence, in the very same system, of spin- and atomic-density wave ordering, accompanied by the occurrence of superfluidity for g >0 , while cavity photons are seen to drive strong correlations at all g values, with fermionic character for g >0 , and bosonic character for g analysis.

Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

Energy Technology Data Exchange (ETDEWEB)

Kostin, Yu O; Lobintsov, A A; Shramenko, M V [OOO ' Opton' , Moscow (Russian Federation); Ladugin, M A; Marmalyuk, A A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation); Chamorovsky, A Yu [Superlum Ltd., Unit B3, Fota Point Enterprise Park, Carrigtwohill, Co Cork (Ireland); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

2015-08-31

We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

Very high repetition-rate electro-optical cavity-dumped Nd: YVO4 laser with optics and dynamics stabilities

Science.gov (United States)

Liu, Xuesong; Shi, Zhaohui; Huang, Yutao; Fan, Zhongwei; Yu, Jin; Zhang, Jing; Hou, Liqun

2015-02-01

In this paper, a very high repetition-rate, short-pulse, electro-optical cavity-dumped Nd: YVO4 laser is experimentally and theoretically investigated. The laser performance is optimized from two aspects. Firstly, the laser resonator is designed for a good thermal stability under large pump power fluctuation through optics methods. Secondly, dynamics simulation as well as experiments verifies that cavity dumping at very high repetition rate has better stability than medium/high repetition rate. At 30 W, 880 nm pump power, up to 500 kHz, constant 5 ns, stable 1064 nm fundamental-mode laser pulses can be obtained with 10 W average output power.

Excitonic optical bistability in n-type doped semiconductors

International Nuclear Information System (INIS)

Nguyen Ba An; Le Thi Cat Tuong

1991-07-01

A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

Science.gov (United States)

Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

2016-03-01

We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

Cost-effective optical fiber pressure sensor based on intrinsic Fabry-Perot interferometric micro-cavities

Science.gov (United States)

Domingues, M. Fátima; Rodriguez, Camilo A.; Martins, Joana; Tavares, Cátia; Marques, Carlos; Alberto, Nélia; André, Paulo; Antunes, Paulo

2018-05-01

In this work, a cost-effective procedure to manufacture optical fiber pressure sensors is presented. This has a high relevance for integration in robotic exoskeletons or for gait plantar pressure monitoring within the physical rehabilitation scenarios, among other applications. The sensing elements are based on Fabry-Perot interferometric (FPI) micro-cavities, created from the recycling of optical fibers previously destroyed by the catastrophic fuse effect. To produce the pressure sensors, the fiber containing the FPI micro-cavities was embedded in an epoxy resin cylinder used as pressure transducer and responsible to transfer the pressure applied on its surface to the optical fiber containing the FPI micro-cavity. Before the embedding process, some FPI sensors were also characterized to strain variations. After that, the effect of the encapsulation of the FPI structure into the resin was assessed, from which a slight decrease on the FPI interferogram fringes visibility was verified, indicating a small increase in the micro-cavity length. Up on the sensors characterization, a linear dependence of the wavelength shift with the induced pressure was obtained, which leads to a maximum sensitivity of 59.39 ± 1.7 pm/kPa. Moreover, direct dependence of the pressure sensitivity with the micro-cavity volume and length was found.

2R Regeneration in Concatenated Semiconductor Optical Amplifiers and Electroabsorbers

DEFF Research Database (Denmark)

Christiansen, Lotte Jin; Xu, Lin; Yvind, Kresten

2004-01-01

We present a novel 2R regenerator with a large level separation and steep step a sharp, adjustable threshold based on concatenated semiconductor optical amplifiers and electroabsorbers. We demonstrate demonstrate improvements in both extinction-ratio and BER sensitivity atfor a 10 Gb/s NRZ signal....

Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors

OpenAIRE

Linnik, M.; Christou, A.

2001-01-01

The design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 µm is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been ...

Development of optical inspection system of L-band SRF cavity

International Nuclear Information System (INIS)

Tajima, Yujiro; Iwashita, Yoshihisa; Hayano, Hitoshi

2008-01-01

The International Linear Collider (ILC) will require about 15,000 1.3 GHz superconducting radio frequency (SRF) accelerating cavities with high accelerating gradient (>35 MV/m) in its main linac. The high yield (80%) of successful high gradient cavities is necessary. Both of the yield and the accelerating gradient of SRF cavities does not reach the required level at present. We think that the gradient of the SRF cavities is limited by irregularities on the interior surface of the cavities, for example, fine dusts (1μm), balls (100μm) and pits (100μm): electrons emitted from the fine dusts by the tunnel effect are accelerated in the electric field, and consume the stored energy of the cavities (Field Emission). The balls and pits cause a breakdown by a magnetic field enhancement or a thermal current concentration (Thermal Breakdown). To prevent these problems the interior surface are treated by polishing and rinsing. The relation between the surface states and the gradient limitations, however, is still not clarified. To study the relation, we are developing an optical inspection system of the interior surface. (author)

All-optical pulse data generation in a semiconductor optical amplifier gain controlled by a reshaped optical clock injection

Science.gov (United States)

Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

2006-05-01

Wavelength-maintained all-optical pulse data pattern transformation based on a modified cross-gain-modulation architecture in a strongly gain-depleted semiconductor optical amplifier (SOA) is investigated. Under a backward dark-optical-comb injection with 70% duty-cycle reshaping from the received data clock at 10GHz, the incoming optical data stream is transformed into a pulse data stream with duty cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. The high-pass filtering effect of the gain-saturated SOA greatly improves the extinction ratio of data stream by 8dB and reduces its bit error rate to 10-12 at -18dBm.

Novel Cavities in Vertical External Cavity Surface Emitting Lasers for Emission in Broad Spectral Region by Means of Nonlinear Frequency Conversion

Science.gov (United States)

Lukowski, Michal L.

Optically pumped semiconductor vertical external cavity surface emitting lasers (VECSEL) were first demonstrated in the mid 1990's. Due to the unique design properties of extended cavity lasers VECSELs have been able to provide tunable, high-output powers while maintaining excellent beam quality. These features offer a wide range of possible applications in areas such as medicine, spectroscopy, defense, imaging, communications and entertainment. Nowadays, newly developed VECSELs, cover the spectral regions from red (600 nm) to around 5 microm. By taking the advantage of the open cavity design, the emission can be further expanded to UV or THz regions by the means of intracavity nonlinear frequency generation. The objective of this dissertation is to investigate and extend the capabilities of high-power VECSELs by utilizing novel nonlinear conversion techniques. Optically pumped VECSELs based on GaAs semiconductor heterostructures have been demonstrated to provide exceptionally high output powers covering the 900 to 1200 nm spectral region with diffraction limited beam quality. The free space cavity design allows for access to the high intracavity circulating powers where high efficiency nonlinear frequency conversions and wavelength tuning can be obtained. As an introduction, this dissertation consists of a brief history of the development of VECSELs as well as wafer design, chip fabrication and resonator cavity design for optimal frequency conversion. Specifically, the different types of laser cavities such as: linear cavity, V-shaped cavity and patented T-shaped cavity are described, since their optimization is crucial for transverse mode quality, stability, tunability and efficient frequency conversion. All types of nonlinear conversions such as second harmonic, sum frequency and difference frequency generation are discussed in extensive detail. The theoretical simulation and the development of the high-power, tunable blue and green VECSEL by the means of type I

Generation and control of optical frequency combs using cavity electromagnetically induced transparency

Science.gov (United States)

Li, Jiahua; Qu, Ye; Yu, Rong; Wu, Ying

2018-02-01

We explore theoretically the generation and all-optical control of optical frequency combs (OFCs) in photon transmission based on a combination of single-atom-cavity quantum electrodynamics (CQED) and electromagnetically induced transparency (EIT). Here an external control field is used to form the cavity dark mode of the CQED system. When the strengths of the applied EIT control field are appropriately tuned, enhanced comb generation can be achieved. We discuss the properties of the dark mode and clearly show that the formation of the dark mode enables the efficient generation of OFCs. In our approach, the comb spacing is determined by the beating frequency between the driving pump and seed lasers. Our demonstrated theory may pave the way towards all-optical coherent control of OFCs using a CQED architecture.

Enhancement of acousto-optical coupling in two-dimensional air-slot phoxonic crystal cavities by utilizing surface acoustic waves

Energy Technology Data Exchange (ETDEWEB)

Ma, Tian-Xue [Institute of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044 (China); Wang, Yue-Sheng, E-mail: yswang@bjtu.edu.cn [Institute of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044 (China); Zhang, Chuanzeng [Department of Civil Engineering, University of Siegen, D-57068 Siegen (Germany)

2017-01-30

A phoxonic crystal is a periodically patterned material that can simultaneously localize optical and acoustic modes. The acousto-optical coupling in two-dimensional air-slot phoxonic crystal cavities is investigated numerically. The photons can be well confined in the slot owing to the large electric field discontinuity at the air/dielectric interfaces. Besides, the surface acoustic modes lead to the localization of the phonons near the air-slot. The high overlap of the photonic and phononic cavity modes near the slot results in a significant enhancement of the moving interface effect, and thus strengthens the total acousto-optical interaction. The results of two cavities with different slot widths show that the coupling strength is dependent on the slot width. It is expected to achieve a strong acousto-optical/optomechanical coupling in air-slot phoxonic crystal structures by utilizing surface acoustic modes. - Highlights: • Two-dimensional air-slot phoxonic crystal cavities which can confine simultaneously optical and acoustic waves are proposed. • The acoustic and optical waves are highly confined near/in the air-slot. • The high overlap of the photonic and phononic cavity modes significantly enhances the moving interface effect. • Different factors which affect the acousto-optical coupling are discussed.

High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

Directory of Open Access Journals (Sweden)

Andreas Schmitt-Sody

2008-01-01

Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

Frequency modulation of semiconductor disk laser pulses

Energy Technology Data Exchange (ETDEWEB)

Zolotovskii, I O; Korobko, D A; Okhotnikov, O G [Ulyanovsk State University, Ulyanovsk (Russian Federation)

2015-07-31

A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

Internal optical bistability of quasi-two-dimensional semiconductor nanoheterostructures

Science.gov (United States)

Derevyanchuk, Oleksandr V.; Kramar, Natalia K.; Kramar, Valeriy M.

2018-01-01

We represent the results of numerical computations of the frequency and temperature domains of possible realization of internal optical bistability in flat quasi-two-dimensional semiconductor nanoheterostructures with a single quantum well (i.e., nanofilms). Particular computations have been made for a nanofilm of layered semiconductor PbI2 embedded in dielectric medium, i.e. ethylene-methacrylic acid (E-MAA) copolymer. It is shown that an increase in the nanofilm's thickness leads to a long-wave shift of the frequency range of the manifestation the phenomenon of bistability, to increase the size of the hysteresis loop, as well as to the expansion of the temperature interval at which the realization of this phenomenon is possible.

Novel design of electrical sensing interface for prosthetic limbs using optical micro cavities

Science.gov (United States)

Ali, Amir R.; Kamel, Mohamed A.

2018-04-01

This paper uses optical whispering galley modes (WGM) cavities to construct a new electrical sensing interface between prosthetic limb and the brain. The sensing element will detect the action potential signal in the neural membrane and the prosthetic limb will be actuated accordingly. The element is a WGM dielectric polymeric cavity. WGM based optical cavities can achieve very high values of sensitivity and quality factor; thus, any minute perturbations in the morphology of the cavity can be captured and measured. The action potential signal will produce an applied external electric field on the dielectric cavity causing it to deform due to the electrostriction effect. The resulting deformation will cause WGM shifts in the transmission spectrum of the cavity. Thus, the action potential or the applied electric field can be measured using these shifts. In this paper the action potential signal will be simulated through the use of a function generator and two metal electrodes. The sensing element will be situated between these electrodes to detect the electrical signal passing through. The achieved sensitivity is 27.5 pm/V in measuring the simulated action potential signal; and 0.32 pm/V.m-1 in measuring the applied electric field due to the passage of the simulated signal.

Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

Science.gov (United States)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

2016-04-01

A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

Parametric feedback cooling of a single atom inside on optical cavity

International Nuclear Information System (INIS)

Tatjana Wilk

2014-01-01

An optical cavity can be used as a kind of intensifier to study radiation features of an atom, which are hard to detect in free space, like squeezing. Such experiments make use of strong coupling between atom and cavity mode, which experimentally requires the atom to be well localized in the cavity mode. This can be achieved using feedback on the atomic motion: from intensity variations of a probe beam transmitted through the cavity information about the atomic motion is gained, which is used to synchronously modulate the trapping potential holding the atom, leading to cooling and better localization. Here, we report on efficient parametric feedback cooling of a single atom held in an intra-cavity standing wave dipole trap. In contrast to previous feedback strategies, this scheme cools the fast axial oscillation of the atom as well as the slower radial motion. (author)

Fast optical detecting media based on semiconductor nanostructures for recording images obtained using charges of free photocarriers

International Nuclear Information System (INIS)

Kasherininov, P. G.; Tomasov, A. A.; Beregulin, E. V.

2011-01-01

Available published data on the properties of optical recording media based on semiconductor structures are reviewed. The principles of operation, structure, parameters, and the range of application for optical recording media based on MIS structures formed of photorefractive crystals with a thick layer of insulator and MIS structures with a liquid crystal as the insulator (the MIS LC modulators), as well as the effect of optical bistability in semiconductor structures (semiconductor MIS structures with nanodimensionally thin insulator (TI) layer, M(TI)S nanostructures). Special attention is paid to recording media based on the M(TI)S nanostructures promising for fast processing of highly informative images and to fabrication of optoelectronic correlators of images for noncoherent light.

Layer-by-layer assembly of multicolored semiconductor quantum dots towards efficient blue, green, red and full color optical films

International Nuclear Information System (INIS)

Zhang Jun; Li Qian; Di Xiaowei; Liu Zhiliang; Xu Gang

2008-01-01

Multicolored semiconductor quantum dots have shown great promise for construction of miniaturized light-emitting diodes with compact size, low weight and cost, and high luminescent efficiency. The unique size-dependent luminescent property of quantum dots offers the feasibility of constructing single-color or full-color output light-emitting diodes with one type of material. In this paper, we have demonstrated the facile fabrication of blue-, green-, red- and full-color-emitting semiconductor quantum dot optical films via a layer-by-layer assembly technique. The optical films were constructed by alternative deposition of different colored quantum dots with a series of oppositely charged species, in particular, the new use of cationic starch on glass substrates. Semiconductor ZnSe quantum dots exhibiting blue emission were deposited for fabrication of blue-emitting optical films, while semiconductor CdTe quantum dots with green and red emission were utilized for construction of green- and red-emitting optical films. The assembly of integrated blue, green and red semiconductor quantum dots resulted in full-color-emitting optical films. The luminescent optical films showed very bright emitting colors under UV irradiation, and displayed dense, smooth and efficient luminous features, showing brighter luminescence in comparison with their corresponding quantum dot aqueous colloid solutions. The assembled optical films provide the prospect of miniaturized light-emitting-diode applications.

Temperature Sensitivity of an Atomic Vapor Cell-Based Dispersion-Enhanced Optical Cavity

Science.gov (United States)

Myneni, K.; Smith, D. D.; Chang, H.; Luckay, H. A.

2015-01-01

Enhancement of the response of an optical cavity to a change in optical path length, through the use of an intracavity fast-light medium, has previously been demonstrated experimentally and described theoretically for an atomic vapor cell as the intracavity resonant absorber. This phenomenon may be used to enhance both the scale factor and sensitivity of an optical cavity mode to the change in path length, e.g. in gyroscopic applications. We study the temperature sensitivity of the on-resonant scale factor enhancement, S(sub o), due to the thermal sensitivity of the lower-level atom density in an atomic vapor cell, specifically for the case of the Rb-87 D(sub 2) transition. A semi-empirical model of the temperature-dependence of the absorption profile, characterized by two parameters, a(sub o)(T) and gamma(sub a)(T) allows the temperature-dependence of the cavity response, S(sub o)(T) and dS(sub o)/dT to be predicted over a range of temperature. We compare the predictions to experiment. Our model will be useful in determining the useful range for S(sub o), given the practical constraints on temperature stability for an atomic vapor cell.

A study on the optical parts for a semiconductor laser module

Energy Technology Data Exchange (ETDEWEB)

Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)

2014-11-15

A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

Temporal characterization of FEL micropulses as function of cavity length detuning using frequency-resolved optical gating

Energy Technology Data Exchange (ETDEWEB)

Richman, B.A. [Stanford Univ., CA (United States); DeLong, K.W.; Trebino, R. [Sandia National Lab., Livermore, CA (United States)

1995-12-31

Results of frequency resolved optical gating (FROG) measurements on the Stanford mid-IR FEL system show the effect of FEL cavity length detuning on the micropulse temporal structure. The FROG technique enables the acquisition of complete and uniquely invertible amplitude and phase temporal dependence of optical pulses. Unambiguous phase and amplitude profiles are recovered from the data. The optical pulses are nearly transform limited, and the pulse length increases with cavity length detuning.

All-optical OR/NOR Bi-functional logic gate by using cross-gain modulation in semiconductor optical amplifiers

International Nuclear Information System (INIS)

Choi, Kyoung Sun; Byun, Young Tae; Lee, Seok; Jhon, Young Min

2010-01-01

An OR/NOR bi-functional all-optical logic gate has been experimentally demonstrated at 10 Gbit/s by using cross-gain modulation (XGM) in only 2 semiconductor optical amplifiers (SOAs). One SOA was used for NOR operation and the other SOA was used for inversion to obtain OR operation. Numerical simulation has also been performed, which coincided well with the experimental results.

Scheme for generating the singlet state of three atoms trapped in distant cavities coupled by optical fibers

Energy Technology Data Exchange (ETDEWEB)

Wang, Dong-Yang [Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002 (China); Wen, Jing-Ji [College of Foundation Science, Harbin University of Commerce, Harbin, Heilongjiang 150028 (China); Bai, Cheng-Hua; Hu, Shi; Cui, Wen-Xue [Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002 (China); Wang, Hong-Fu, E-mail: hfwang@ybu.edu.cn [Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002 (China); Zhu, Ai-Dong [Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002 (China); Zhang, Shou, E-mail: szhang@ybu.edu.cn [Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002 (China)

2015-09-15

An effective scheme is proposed to generate the singlet state with three four-level atoms trapped in three distant cavities connected with each other by three optical fibers, respectively. After a series of appropriate atom–cavity interactions, which can be arbitrarily controlled via the selective pairing of Raman transitions and corresponding optical switches, a three-atom singlet state can be successfully generated. The influence of atomic spontaneous decay, photon leakage of cavities and optical fibers on the fidelity of the state is numerically simulated showing that the three-atom singlet state can be generated with high fidelity by choosing the experimental parameters appropriately.

Complex ABCD transformations for optical ring cavities with losses and gain

International Nuclear Information System (INIS)

Kudashov, V N; Radin, A M; Plachenov, A B

1999-01-01

Complex ABCD field transformations are investigated for inhomogeneous optical ring cavities with losses and gain. It is shown that the sets of eigenfunctions, corresponding to counterpropagating waves, are really biorthogonal: the functions in each of these sets are really orthogonal relative to one another, and have a complex weighting factor independent of the mode number. Bidirectional and unidirectional stability conditions are formulated for such cavities. These conditions are qualitatively different from those for loss-free cavities. A simple algorithm is proposed for the evaluation of the ABCD matrix for a medium with an arbitrary longitudinal inhomogeneity along the beam. (laser applications and other topics in quantum electronics)

Optical and optoelectronic properties of nanostructures based on wide-bandgap semiconductors

International Nuclear Information System (INIS)

Kalden, Joachim

2010-01-01

Recently, more and more research is done on nitride nanostructures in order to control the electrical and optical properties in a more sophisticated manner for optimized light-matter-interaction and extraction efficiency. In this context, the work presented in this thesis has been carried out, concentrating on two main topics. One aspect is the characterization of InGaN quantum dots (QDs). QDs possess a unique atom-like density of states for electrons, allowing for generation and manipulation of discrete electronic states. This thesis contains the analysis of QDs embedded in optoelectronic devices such as LEDs. Measurements of the electroluminescence (EL) of QD ensembles as well as single QDs are presented. Especially QD EL obtained at higher temperatures up to 150 K is a main achievement of this work. Furthermore, the photoluminescence (PL) of QD multilayer structures has been examined and discussed in detail. Experiments on the optical amplification in these multilayers have been carried out for the first time, yielding a maximum optical gain of g(max)/(mod)=50/cm. Another main aspect of solid state lighting is the efficient light extraction from light sources. For this purpose, pillar microcavities based on nitrides have been investigated. This type of optical resonator possesses a discrete optical mode structure due to the three-dimensional optical confinement in these structures. For optimal light-matter coupling conditions, this leads to an enhanced extraction efficiency. In this context, studies on QD pillar microcavities (MCs) processed by focused ion beam milling from planar MC structures are presented. After a detailed analysis of the photonic properties of these pillar MCs, a temperature-variation method to tune the cavity in resonance with QD emission is demonstrated, yielding a five-fold enhancement of the extraction efficiency. These experiments were carried out on selenide-based structures which possess a very high structural quality. An alternative

On the Theory of Coupled Modes in Optical Cavity-Waveguide Structures

DEFF Research Database (Denmark)

Kristensen, Philip Trøst; de Lasson, Jakob Rosenkrantz; Heuck, Mikkel

2017-01-01

Light propagation in systems of optical cavities coupled to waveguides can be conveniently described by a general rate equation model known as (temporal) coupled mode theory (CMT). We present an alternative derivation of the CMT for optical cavitywaveguide structures, which explicitly relies...... in the coupled systems. Practical application of the theory is illustrated using example calculations in one and two dimensions....

Optically pumped semiconductor lasers for atomic and molecular physics

Science.gov (United States)

Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

2015-03-01

Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

Science.gov (United States)

Khadzhi, P. I.; Lyakhomskaya, K. D.; Nadkin, L. Y.; Markov, D. A.

2002-05-01

The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.

Frequency-feedback cavity enhanced spectrometer

Science.gov (United States)

Hovde, David Christian; Gomez, Anthony

2015-08-18

A spectrometer comprising an optical cavity, a light source capable of producing light at one or more wavelengths transmitted by the cavity and with the light directed at the cavity, a detector and optics positioned to collect light transmitted by the cavity, feedback electronics causing oscillation of amplitude of the optical signal on the detector at a frequency that depends on cavity losses, and a sensor measuring the oscillation frequency to determine the cavity losses.

Development of integrated semiconductor optical sensors for functional brain imaging

Science.gov (United States)

Lee, Thomas T.

Optical imaging of neural activity is a widely accepted technique for imaging brain function in the field of neuroscience research, and has been used to study the cerebral cortex in vivo for over two decades. Maps of brain activity are obtained by monitoring intensity changes in back-scattered light, called Intrinsic Optical Signals (IOS), that correspond to fluctuations in blood oxygenation and volume associated with neural activity. Current imaging systems typically employ bench-top equipment including lamps and CCD cameras to study animals using visible light. Such systems require the use of anesthetized or immobilized subjects with craniotomies, which imposes limitations on the behavioral range and duration of studies. The ultimate goal of this work is to overcome these limitations by developing a single-chip semiconductor sensor using arrays of sources and detectors operating at near-infrared (NIR) wavelengths. A single-chip implementation, combined with wireless telemetry, will eliminate the need for immobilization or anesthesia of subjects and allow in vivo studies of free behavior. NIR light offers additional advantages because it experiences less absorption in animal tissue than visible light, which allows for imaging through superficial tissues. This, in turn, reduces or eliminates the need for traumatic surgery and enables long-term brain-mapping studies in freely-behaving animals. This dissertation concentrates on key engineering challenges of implementing the sensor. This work shows the feasibility of using a GaAs-based array of vertical-cavity surface emitting lasers (VCSELs) and PIN photodiodes for IOS imaging. I begin with in-vivo studies of IOS imaging through the skull in mice, and use these results along with computer simulations to establish minimum performance requirements for light sources and detectors. I also evaluate the performance of a current commercial VCSEL for IOS imaging, and conclude with a proposed prototype sensor.

Production cavity and central optics for a light shining through a wall experiment

International Nuclear Information System (INIS)

Hodajerdi, Reza

2015-02-01

The unexplained nature of dark matter and dark energy is a prominent reason for investigating physics beyond the standard model of particle physics (SM). Some extensions of the SM propose weakly interacting slim particles (WISPs). In an attempt to prove the existence of these particles, Light shining through the wall (LSW) experiments explore a very weak coupling between WISPs and photons (and viceversa). LSW experiments employ high-power lasers that provide a well defined flux of photons for the WISP-Photon conversion. The ALPS-I experiment at DESY in Hamburg was the first successful experiment with a high finesse optical resonator to enhance the laser power in a strong magnetic field in order to increase the photon to WISP conversion probability. The ALPS-II experimental concept adds a second optical cavity to also increase the reconversion probability. Both cavities are separated by a wall, amplify light at 1064 nm and share a common optical axis. Operating these two cavities inside 20 straightened HERA superconducting dipole magnets and using a transition edge sensor (TES) as a single photon detector will make the ALPS-II experiment almost three orders of magnitude more sensitive than its predecessor. Since photons, originating from reconverted WISPs in the regeneration cavity (RC) have 1064 nm wavelengths, the RC has to be locked to the production cavity (PC) with light of a different wavelength. Therefore frequency doubled PCs light will be used to lock the RC. This 532 nm light shall not arrive at the TES to prevent background noise. To achieve this, an optical attenuation system for wavelengths different from 1064 nm is required. In my thesis, the required attenuation was estimated and an optical setup was proposed and constructed and tested. It attenuates green photons by a factor of of 10 -18 and transmits 85% of the infrared photons. Furthermore the high finesse production cavity of ALPS-IIa was set up and characterized during this thesis. The PC reached

NONLINEAR OPTICAL PHENOMENA: Self-reflection in a system of excitons and biexcitons in semiconductors

Science.gov (United States)

Khadzhi, P. I.; Lyakhomskaya, K. D.

1999-10-01

The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.

Microscopic theory of photon-correlation spectroscopy in strong-coupling semiconductors

Energy Technology Data Exchange (ETDEWEB)

Schneebeli, Lukas

2009-11-27

While many quantum-optical phenomena are already well established in the atomic systems, like the photon antibunching, squeezing, Bose-Einstein condensation, teleportation, the quantum-optical investigations in semiconductors are still at their beginning. The fascinating results observed in the atomic systems inspire physicists to demonstrate similar quantum-optical effects also in the semiconductor systems. In contrast to quantum optics with dilute atomic gases, the semiconductors exhibit a complicated many-body problem which is dominated by the Coulomb interaction between the electrons and holes and by coupling with the semiconductor environment. This makes the experimental observation of similar quantum-optical effects in semiconductors demanding. However, there are already experiments which have verified nonclassical effects in semiconductors. In particular, experiments have demonstrated that semiconductor quantum dots (QDs) can exhibit the single-photon emission and generation of polarization-entangled photon pairs. In fact, both atom and QD systems, embedded within a microcavity, have become versatile platforms where one can perform systematic quantum-optics investigations as well as development work toward quantum-information applications. Another interesting field is the strong-coupling regime in which the light-matter coupling exceeds both the decoherence rate of the atom or QD and the cavity resulting in a reversible dynamics between light and matter excitations. In the strong-coupling regime, the Jaynes-Cummings ladder is predicted and shows a photon-number dependent splitting of the new dressed strong-coupling states which are the polariton states of the coupled light-matter system. Although the semiclassical effect of the vacuum Rabi splitting has already been observed in QDs, the verification of the quantum-mechanical Jaynes-Cummings splitting is still missing mainly due to the dephasing. Clearly, the observation of the Jaynes-Cummings ladder in QDs

Optical Injection Locking of Vertical Cavity Surface-Emitting Lasers: Digital and Analog Applications

Science.gov (United States)

Parekh, Devang

With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance

Cavity Formation Modeling of Fiber Fuse in Single-Mode Optical Fibers

Directory of Open Access Journals (Sweden)

Yoshito Shuto

2017-01-01

Full Text Available The evolution of a fiber-fuse phenomenon in a single-mode optical fiber was studied theoretically. To clarify both the silica-glass densification and cavity formation, which have been observed in fiber fuse propagation, we investigated a nonlinear oscillation model using the Van Der Pol equation. This model was able to phenomenologically explain both the densification of the core material and the formation of periodic cavities in the core layer as a result of a relaxation oscillation.

Nonlinear estimation of ring-down time for a Fabry-Perot optical cavity.

Science.gov (United States)

Kallapur, Abhijit G; Boyson, Toby K; Petersen, Ian R; Harb, Charles C

2011-03-28

This paper discusses the application of a discrete-time extended Kalman filter (EKF) to the problem of estimating the decay time constant for a Fabry-Perot optical cavity for cavity ring-down spectroscopy (CRDS). The data for the estimation process is obtained from a CRDS experimental setup in terms of the light intensity at the output of the cavity. The cavity is held in lock with the input laser frequency by controlling the distance between the mirrors within the cavity by means of a proportional-integral (PI) controller. The cavity is purged with nitrogen and placed under vacuum before chopping the incident light at 25 KHz and recording the light intensity at its output. In spite of beginning the EKF estimation process with uncertainties in the initial value for the decay time constant, its estimates converge well within a small neighborhood of the expected value for the decay time constant of the cavity within a few ring-down cycles. Also, the EKF estimation results for the decay time constant are compared to those obtained using the Levenberg-Marquardt estimation scheme.

Continuous-wave optically pumped green perovskite vertical-cavity surface-emitter

KAUST Repository

Alias, Mohd Sharizal; Liu, Zhixiong; Alatawi, Abdullah; Ng, Tien Khee; Wu, Tao; Ooi, Boon S.

2017-01-01

We report an optically pumped green perovskite vertical-cavity surface-emitter operating in continuous-wave (CW) with a power density threshold of ~89 kW/cm2. The device has an active region of CH3NH3PbBr3 embedded in a dielectric microcavity

Flight-Like Optical Reference Cavity for GRACE Follow-On Laser Frequency Stabilization

Science.gov (United States)

Folkner, W. M.; deVine, G.; Klipstein, W. M.; McKenzie, K.; Spero, R.; Thompson, R.; Yu, N.; Stephens, M.; Leitch, J.; Pierce, R.;

Quantum of optical absorption in two-dimensional semiconductors.

Science.gov (United States)

Fang, Hui; Bechtel, Hans A; Plis, Elena; Martin, Michael C; Krishna, Sanjay; Yablonovitch, Eli; Javey, Ali

2013-07-16

The optical absorption properties of free-standing InAs nanomembranes of thicknesses ranging from 3 nm to 19 nm are investigated by Fourier transform infrared spectroscopy. Stepwise absorption at room temperature is observed, arising from the interband transitions between the subbands of 2D InAs nanomembranes. Interestingly, the absorptance associated with each step is measured to be ∼1.6%, independent of thickness of the membranes. The experimental results are consistent with the theoretically predicted absorptance quantum, AQ = πα/nc for each set of interband transitions in a 2D semiconductor, where α is the fine structure constant and nc is an optical local field correction factor. Absorptance quantization appears to be universal in 2D systems including III-V quantum wells and graphene.

Handbook of luminescent semiconductor materials

CERN Document Server

Bergman, Leah

2011-01-01

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

Structural and optical studies of local disorder sensitivity in natural organic-inorganic self-assembled semiconductors

Energy Technology Data Exchange (ETDEWEB)

Vijaya Prakash, G; Pradeesh, K [Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi, New Delhi (India); Ratnani, R; Saraswat, K [Department of Pure and Applied Chemistry, MDS University, Ajmer (India); Light, M E [School of Chemistry, University of Southampton, Southampton (United Kingdom); Baumberg, J J, E-mail: prakash@physics.iitd.ac.i [Nanophotonic Centre, Cavendish Laboratory, University Cambridge, Cambridge CB3 OHE (United Kingdom)

2009-09-21

The structural and optical spectra of two related lead iodide (PbI) based self-assembled hybrid organic-inorganic semiconductors are compared. During the synthesis, depending on the bridging of organic moiety intercalated between the PbI two-dimensional planes, different crystal structures are produced. These entirely different networks show different structural and optical features, including excitonic bandgaps. In particular, the modified organic environment of the excitons is sensitive to the local disorder both in single crystal and thin film forms. Such information is vital for incorporating these semiconductors into photonic device architectures.

Semiconductor optical amplifiers for the 1000-1100-nm spectral range

International Nuclear Information System (INIS)

Lobintsov, A A; Shramenko, M V; Yakubovich, S D

2008-01-01

Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)

Optical generation and control of quantum coherence in semiconductor nanostructures

CERN Document Server

Slavcheva, Gabriela

2010-01-01

The unprecedented control of coherence that can be exercised in quantum optics of atoms and molecules has stimulated increasing efforts in extending it to solid-state systems. One motivation to exploit the coherent phenomena comes from the emergence of the quantum information paradigm, however many more potential device applications ranging from novel lasers to spintronics are all bound up with issues in coherence. The book focuses on recent advances in the optical control of coherence in excitonic and polaritonic systems as model systems for the complex semiconductor dynamics towards the goal

Simulation of noise-assisted transport via optical cavity networks

International Nuclear Information System (INIS)

Caruso, Filippo; Plenio, Martin B.; Spagnolo, Nicolo; Vitelli, Chiara; Sciarrino, Fabio

2011-01-01

Recently, the presence of noise has been found to play a key role in assisting the transport of energy and information in complex quantum networks and even in biomolecular systems. Here we propose an experimentally realizable optical network scheme for the demonstration of the basic mechanisms underlying noise-assisted transport. The proposed system consists of a network of coupled quantum-optical cavities, injected with a single photon, whose transmission efficiency can be measured. Introducing dephasing in the photon path, this system exhibits a characteristic enhancement of the transport efficiency that can be observed with presently available technology.

A Novel Defect Inspection Method for Semiconductor Wafer Based on Magneto-Optic Imaging

Science.gov (United States)

Pan, Z.; Chen, L.; Li, W.; Zhang, G.; Wu, P.

2013-03-01

The defects of semiconductor wafer may be generated from the manufacturing processes. A novel defect inspection method of semiconductor wafer is presented in this paper. The method is based on magneto-optic imaging, which involves inducing eddy current into the wafer under test, and detecting the magnetic flux associated with eddy current distribution in the wafer by exploiting the Faraday rotation effect. The magneto-optic image being generated may contain some noises that degrade the overall image quality, therefore, in this paper, in order to remove the unwanted noise present in the magneto-optic image, the image enhancement approach using multi-scale wavelet is presented, and the image segmentation approach based on the integration of watershed algorithm and clustering strategy is given. The experimental results show that many types of defects in wafer such as hole and scratch etc. can be detected by the method proposed in this paper.

Acousto-optic modulation of III-V semiconductor multiple quantum wells

International Nuclear Information System (INIS)

Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.

1996-01-01

We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society

Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

International Nuclear Information System (INIS)

Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

2007-01-01

We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity

Method of increasing power within an optical cavity with long path lengths

Energy Technology Data Exchange (ETDEWEB)

Leen, John Brian; Bramall, Nathan E.

2018-03-13

A cavity-enhanced absorption spectroscopy instrument has an optical cavity with two or more cavity mirrors, one mirror of which having a hole or other aperture for injecting a light beam, and the same or another mirror of which being partially transmissive to allow exit of light to a detector. A spherical-spherical configuration with at least one astigmatic mirror or a spherical-cylindrical configuration where the spherical mirror could also be astigmatic prevents a reentrant condition wherein the injected beam would prematurely exit the cavity through the aperture. This combination substantially increases the number of passes of the injected beam through a sample volume for sensitive detection of chemical species even in less than ideal conditions including low power laser or LED sources, poor mirror reflectivity or detector noise at the wavelengths of interest, or cavity alignment issues such as vibration or temperature and pressure changes.

The theoretical and numerical models of the novel and fast tunable semiconductor ring laser

Science.gov (United States)

Zhu, Jiangbo; Zhang, Junwen; Chi, Nan; Yu, Siyuan

2011-01-01

Fast wavelength-tunable semiconductor lasers will be the key components in future optical packet switching networks. Especially, they are of great importance in the optical network nodes: transmitters, optical wavelength-routers, etc. In this paper, a new scheme of a next-generation fast tunable ring laser was given. Tunable lasers in this design have better wavelength tunability compared with others, for they are switched faster in wavelength and simpler to control with the injecting light from an external distributed Bragg-reflector(DBR). Then some discussion of the waveguide material system and coupler design of the ring laser were given. And we also derived the multimode rate equations corresponding to this scheme by analyzing some characteristics of the semiconductor ring cavity, directionality, nonlinear mode competition, optical injection locking, etc. We did MatLab simulation based on the new rate equations to research the process of mode competition and wavelength switching in the laser, and achieved the basic functions of a tunable laser. Finally some discussion of the impact of several key parameters was given.

Soil-embedded optical fiber sensing cable interrogated by Brillouin optical time-domain reflectometry (B-OTDR) and optical frequency-domain reflectometry (OFDR) for embedded cavity detection and sinkhole warning system

International Nuclear Information System (INIS)

Lanticq, V; Bourgeois, E; Delepine-Lesoille, S; Magnien, P; Dieleman, L; Vinceslas, G; Sang, A

2009-01-01

A soil-embedded optical fiber sensing cable is evaluated for an embedded cavity detection and sinkhole warning system in railway tunnels. Tests were performed on a decametric structure equipped with an embedded 110 m long fiber optic cable. Both Brillouin optical time-domain reflectometry (B-OTDR) and optical frequency-domain reflectometry (OFDR) sensing techniques were used for cable interrogation, yielding results that were in good qualitative agreement with finite-element calculations. Theoretical and experimental comparison enabled physical interpretation of the influence of ground properties, and the analysis of embedded cavity size and position. A 5 mm embedded cavity located 2 m away from the sensing cable was detected. The commercially available sensing cable remained intact after soil collapse. Specificities of each technique are analyzed in view of the application requirements. For tunnel monitoring, the OFDR technique was determined to be more viable than the B-OTDR due to higher spatial resolution, resulting in better detection and size determination of the embedded cavities. Conclusions of this investigation gave outlines for future field use of distributed strain-sensing methods under railways and more precisely enabled designing a warning system suited to the Ebersviller tunnel specificities

Non-Drude optical conductivity of (III, Mn)V ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Yang, S.R. E.; Sinova, J.; Jungwirth, Tomáš; Shim, Y. P.; MacDonald, A. H.

2003-01-01

Roč. 67, č. 4 (2003), s. 045205-1 - 045205-7 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : non-Drude optical conductivity * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

Optical approach to thermopower and conductivity measurements in thin-film semiconductors

International Nuclear Information System (INIS)

Dersch, H.; Amer, N.M.

1984-01-01

An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented

Interband magneto-optical transitions in a layer of semiconductor nano-rings

NARCIS (Netherlands)

Voskoboynikov, O.; Wijers, Christianus M.J.; Liu, J.L.; Lee, C.P.

2005-01-01

We have developed a quantitative theory of the collective electromagnetic response of layers of semiconductor nano-rings. The response can be controlled by means of an applied magnetic field through the optical Aharonov-Bohm effect and is ultimately required for the design of composite materials. We

Semiconductor sensor for optically measuring polarization rotation of optical wavefronts using rare earth iron garnets

Science.gov (United States)

Duncan, Paul G.

2002-01-01

Described are the design of a rare earth iron garnet sensor element, optical methods of interrogating the sensor element, methods of coupling the optical sensor element to a waveguide, and an optical and electrical processing system for monitoring the polarization rotation of a linearly polarized wavefront undergoing external modulation due to magnetic field or electrical current fluctuation. The sensor element uses the Faraday effect, an intrinsic property of certain rare-earth iron garnet materials, to rotate the polarization state of light in the presence of a magnetic field. The sensor element may be coated with a thin-film mirror to effectively double the optical path length, providing twice the sensitivity for a given field strength or temperature change. A semiconductor sensor system using a rare earth iron garnet sensor element is described.

Analysis of the Vignale-Kohn current functional in the calculation of the optical spectra of semiconductors

NARCIS (Netherlands)

Berger, J. A.; de Boeij, P. L.; van Leeuwen, R.

In this work, we investigate the Vignale-Kohn current functional when applied to the calculation of optical spectra of semiconductors. We discuss our results for silicon. We found qualitatively similar results for other semiconductors. These results show that there are serious limitations to the

Spin-controlled ultrafast vertical-cavity surface-emitting lasers

Science.gov (United States)

Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

2014-05-01

Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

Cavity-Enhanced Raman Spectroscopy of Natural Gas with Optical Feedback cw-Diode Lasers.

Science.gov (United States)

Hippler, Michael

2015-08-04

We report on improvements made on our previously introduced technique of cavity-enhanced Raman spectroscopy (CERS) with optical feedback cw-diode lasers in the gas phase, including a new mode-matching procedure which keeps the laser in resonance with the optical cavity without inducing long-term frequency shifts of the laser, and using a new CCD camera with improved noise performance. With 10 mW of 636.2 nm diode laser excitation and 30 s integration time, cavity enhancement achieves noise-equivalent detection limits below 1 mbar at 1 bar total pressure, depending on Raman cross sections. Detection limits can be easily improved using higher power diodes. We further demonstrate a relevant analytical application of CERS, the multicomponent analysis of natural gas samples. Several spectroscopic features have been identified and characterized. CERS with low power diode lasers is suitable for online monitoring of natural gas mixtures with sensitivity and spectroscopic selectivity, including monitoring H2, H2S, N2, CO2, and alkanes.

An integrated semiconductor device enabling non-optical genome sequencing.

Science.gov (United States)

Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

2011-07-20

The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

International Nuclear Information System (INIS)

Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

2016-01-01

The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception–and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In 2 O 3 (ITO)—converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein–Moss shift that are consistent with previous studies on In 2 O 3 single crystals and thin films. - Highlights: • The Tauc method of band gap measurement is re-evaluated for crystalline materials. • Graphical method proposed for extracting optical band gaps from absorption spectra. • The proposed method incorporates an energy broadening term for energy transitions. • Values for ITO were self-consistent between two different measurement methods.

Auxiliary-cavity-assisted ground-state cooling of an optically levitated nanosphere in the unresolved-sideband regime

Science.gov (United States)

Feng, Jin-Shan; Tan, Lei; Gu, Huai-Qiang; Liu, Wu-Ming

2017-12-01

We theoretically analyze the ground-state cooling of an optically levitated nanosphere in the unresolved-sideband regime by introducing a coupled high-quality-factor cavity. On account of the quantum interference stemming from the presence of the coupled cavity, the spectral density of the optical force exerting on the nanosphere gets changed and then the symmetry between the heating and the cooling processes is broken. Through adjusting the detuning of a strong-dissipative cavity mode, one obtains an enhanced net cooling rate for the nanosphere. It is illustrated that the ground-state cooling can be realized in the unresolved sideband regime even if the effective optomechanical coupling is weaker than the frequency of the nanosphere, which can be understood by the picture that the effective interplay of the nanosphere and the auxiliary cavity mode brings the system back to an effective resolved regime. Besides, the coupled cavity refines the dynamical stability of the system.

Ultrasensitive detection of cell lysing in an microfabricated semiconductor laser cavity

Energy Technology Data Exchange (ETDEWEB)

Gourley, P.L.; French, T.; McDonald, A.E.; Shields, E.A. [Sandia National Labs., Albuquerque, NM (United States); Gourley, M.F. [Washington Hospital Center, Washington, DC (United States)

1998-01-01

In this paper the authors report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, they are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. The authors find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.

Experimental investigations of optical nonlinearities in semiconductor-doped glass waveguides

International Nuclear Information System (INIS)

Dannberg, P.; Possner, T.; Braeuer, A.; Bartuch, U.

1988-01-01

Both, thermal and electronic optical nonlinearities are studied in semiconductor-doped glass (SDG) waveguides which are fabricated in commercially available sharp-cut filters by Cs + -K + ion exchange. The relaxation time in photodarkened substrates is measured to be 30 ps. By means of a prism coupling set-up the saturation value of the nonlinear index change is determined. Furthermore, a high stability dual-beam interferometer is presented for the measurement of both, thermal and electronic nonlinear refractive index n 2 in planar waveguides. Conclusions about the application of SDG to opto-optical switching are given. (author)

Coupling Photonics and Coherent Spintronics for Low-Loss Flexible Optical Logic

Science.gov (United States)

2015-12-02

into devices, ranging from macroscopic optical cavities, to arrays of microlens cavities, to quantum dot-impregnated integrated polymer waveguides...spins   in   semiconductor   nanocrystal   quantum   dots   (NCQDs),   with   the   particular   aim   of   enabling   spin... lock -­‐in   based   detection.   The   pump   and   probe   lasers   are   then   used   for   a   Faraday   rotation

On the estimation of matrix elements for optical transitions in semiconductors

International Nuclear Information System (INIS)

Hassan, A.R.

1992-09-01

A semi-empirical method is used to calculate the numerical values of the interband momentum matrix elements of the allowed optical transitions in semiconductors. This method is based on the evaluation of the ratio of the two-photon and one-photon absorption coefficients and the compare the result with the corresponding experimental values in a number of semiconductors both for direct and indirect transition processes. The numerical values of the momentum matrix elements are compared with the convenient theoretical calculations available. The result is found to agree fairly well with the corresponding values computed using the k-vector · p-vector perturbation theory. (author). 19 refs, 2 figs, 2 tabs

An advanced UV optical cavity for the European FEL project

CERN Document Server

Poole, M W; Chesworth, A A; Clarke, J A; Fell, B; Hill, C; Marl, R; Mullacrane, I D; Reid, R J

2000-01-01

A European collaboration is constructing a short wavelength FEL for the ELETTRA storage ring. The optical cavity has been designed and constructed at Daresbury Laboratory for delivery to Sincrotrone Trieste in Autumn 1999, following commissioning tests over the Summer. Initial FEL operation will be at 350 nm but subsequently down to 200 nm or less and mirrors will be 40 mm diameter. The 32 m optical cavity is controllable to 0.01 mu rad in mirror pitch and yaw using digital piezo translators. A novel feature is the simultaneous presence of three remotely interchangeable mirrors to extend the tuning range and also to interchange damaged mirrors immediately. In addition, a transfer arm and load-lock arrangement will permit a mirror to be withdrawn from the chamber and replaced without disruption to the UHV system. The FEL is designed to operate at high power (1-10 W) and multi-watt spontaneous emission is also present: power loading has been investigated by FEA analysis and has necessitated specification of a w...

Spectral characteristics of DFB lasers in presence of a semiconductor optical amplifier

DEFF Research Database (Denmark)

Champagne, A.; Camel, J.; Maciejko, R.

2002-01-01

The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A numerical model combining finite element calculations in the transverse x - y plane and a longitudinal model...

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Science.gov (United States)

Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

2013-11-01

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Energy Technology Data Exchange (ETDEWEB)

Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

2013-11-11

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Cavity Ring-Down Absorption of O2 in Air as a Temperature Sensor for an Open and a Cryogenic Optical Cavity.

Science.gov (United States)

Nyaupane, Parashu R; Perez-Delgado, Yasnahir; Camejo, David; Wright, Lesley M; Manzanares, Carlos E

2017-05-01

The A-band of oxygen has been measured at low resolution at temperatures between 90 K and 373 K using the phase shift cavity ring down (PS-CRD) technique. For temperatures between 90 K and 295 K, the PS-CRD technique presented here involves an optical cavity attached to a cryostat. The static cell and mirrors of the optical cavity are all inside a vacuum chamber at the same temperature of the cryostat. The temperature of the cell can be changed between 77 K and 295 K. For temperatures above 295 K, a hollow glass cylindrical tube without windows has been inserted inside an optical cavity to measure the temperature of air flowing through the tube. The cavity consists of two highly reflective mirrors which are mounted parallel to each other and separated by a distance of 93 cm. In this experiment, air is passed through a heated tube. The temperature of the air flowing through the tube is determined by measuring the intensity of the oxygen absorption as a function of the wavenumber. The A-band of oxygen is measured between 298 K and 373 K, with several air flow rates. To obtain the temperature, the energy of the lower rotational state for seven selected rotational transitions is linearly fitted to a logarithmic function that contains the relative intensity of the rotational transition, the initial and final rotational quantum numbers, and the energy of the transition. Accuracy of the temperature measurement is determined by comparing the calculated temperature from the spectra with the temperature obtained from a calibrated thermocouple inserted at the center of the tube. This flowing air temperature sensor will be used to measure the temperatures of cooling air at the input (cold air) and output (hot air) after cooling the blades of a laboratory gas turbine. The results could contribute to improvements in turbine blade cooling design.

Semiconductor physics

CERN Document Server

Böer, Karl W

2018-01-01

This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

Return-map for low-frequency fluctuations in semiconductor lasers with optical feedback

DEFF Research Database (Denmark)

Mørk, Jesper; Sabbatier, H.; Sørensen, Mads Peter

1999-01-01

We show that the phenomenon of low-frequency fluctuations (LFF) , commonly observed in semiconductor lasers with optical feedback, can be explained by a simple return-map, implying a tremendous simplification in the description of the slow time-scale dynamics of the system. Experimentally observed...

Optical switching of nuclear spin-spin couplings in semiconductors.

Science.gov (United States)

Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

2011-07-05

Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear-spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings.

Optical switching of nuclear spin–spin couplings in semiconductors

Science.gov (United States)

Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

2011-01-01

Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear–spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings. PMID:21730962

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao

2017-02-07

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

Optical feedback in dfb quantum cascade laser for mid-infrared cavity ring-down spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Terabayashi, Ryohei, E-mail: terabayashi.ryouhei@h.mbox.nagoya-u.ac.jp; Sonnenschein, Volker, E-mail: volker@nagoya-u.jp; Tomita, Hideki, E-mail: tomita@nagoya-u.jp; Hayashi, Noriyoshi, E-mail: hayashi.noriyoshi@h.mbox.nagoya-u.ac.jp; Kato, Shusuke, E-mail: katou.shuusuke@f.mbox.nagoya-u.ac.jp; Jin, Lei, E-mail: kin@nuee.nagoya-u.ac.jp; Yamanaka, Masahito, E-mail: yamanaka@nuee.nagoya-u.ac.jp; Nishizawa, Norihiko, E-mail: nishizawa@nuee.nagoya-u.ac.jp [Nagoya University, Department of Quantum Engineering, Graduate School of Engineering (Japan); Sato, Atsushi, E-mail: atsushi.sato@sekisui.com; Nozawa, Kohei, E-mail: kohei.nozawa@sekisui.com; Hashizume, Kenta, E-mail: kenta.hashizume@sekisui.com; Oh-hara, Toshinari, E-mail: toshinari.ohara@sekisui.com [Sekisui Medical Co., Ltd., Drug Development Solutions Center (Japan); Iguchi, Tetsuo, E-mail: t-iguchi@nucl.nagoya-u.ac.jp [Nagoya University, Department of Quantum Engineering, Graduate School of Engineering (Japan)

2017-11-15

A simple external optical feedback system has been applied to a distributed feedback quantum cascade laser (DFB QCL) for cavity ring-down spectroscopy (CRDS) and a clear effect of feedback was observed. A long external feedback path length of up to 4m can decrease the QCL linewidth to around 50kHz, which is of the order of the transmission linewidth of our high finesse ring-down cavity. The power spectral density of the transmission signal from high finesse cavity reveals that the noise at frequencies above 20kHz is reduced dramatically.

Fine structure and optical pumping of spins in individual semiconductor quantum dots

Science.gov (United States)

Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

2008-11-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

Fine structure and optical pumping of spins in individual semiconductor quantum dots

International Nuclear Information System (INIS)

Bracker, Allan S; Gammon, Daniel; Korenev, Vladimir L

2008-01-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information

Proposal for efficient mode converter based on cavity quantum electrodynamics dark mode in a semiconductor quantum dot coupled to a bimodal microcavity

Energy Technology Data Exchange (ETDEWEB)

Li, Jiahua [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Fundamental Physical Quantities Measurement of Ministry of Education, Wuhan 430074 (China); Yu, Rong, E-mail: yurong321@126.com [School of Science, Hubei Province Key Laboratory of Intelligent Robot, Wuhan Institute of Technology, Wuhan 430073 (China); Ma, Jinyong; Wu, Ying, E-mail: yingwu2@163.com [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2014-10-28

The ability to engineer and convert photons between different modes in a solid-state approach has extensive technological implications not only for classical communication systems but also for future quantum networks. In this paper, we put forward a scheme for coherent mode conversion of optical photons by utilizing the intermediate coupling between a single quantum dot and a bimodal photonic crystal microcavity via a waveguide. Here, one mode of the photonic crystal microcavity is coherently driven by an external single-frequency continuous-wave laser field and the two cavity modes are not coupled to each other due to their orthogonal polarizations. The undriven cavity mode is thus not directly coupled to the input driving laser and the only way it can get light is via the quantum dot. The influences of the system parameters on the photon-conversion efficiency are analyzed in detail in the limit of weak probe field and it is found that high photon-conversion efficiency can be achieved under appropriate conditions. It is shown that the cavity dark mode, which is a superposition of the two optical modes and is decoupled from the quantum dot, can appear in such a hybrid optical system. We discuss the properties of the dark mode and indicate that the formation of the dark mode enables the efficient transfer of optical fields between the two cavity modes.

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

CERN Document Server

Pearton, Stephen

2013-01-01

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

Effect of gain nonlinearity in semiconductor lasers

DEFF Research Database (Denmark)

Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

1988-01-01

Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

Normal mode splitting and ground state cooling in a Fabry—Perot optical cavity and transmission line resonator

International Nuclear Information System (INIS)

Chen Hua-Jun; Mi Xian-Wu

2011-01-01

Optomechanical dynamics in two systems which are a transmission line resonator and Fabrya—Perot optical cavity via radiation—pressure are investigated by linearized quantum Langevin equation. We work in the resolved sideband regime where the oscillator resonance frequency exceeds the cavity linewidth. Normal mode splittings of the mechanical resonator as a pure result of the coupling interaction in the two optomechanical systems is studied, and we make a comparison of normal mode splitting of mechanical resonator between the two systems. In the optical cavity, the normal mode splitting of the movable mirror approaches the latest experiment very well. In addition, an approximation scheme is introduced to demonstrate the ground state cooling, and we make a comparison of cooling between the two systems dominated by two key factors, which are the initial bath temperature and the mechanical quality factor. Since both the normal mode splitting and cooling require working in the resolved sideband regime, whether the normal mode splitting influences the cooling of the mirror is considered. Considering the size of the mechanical resonator and precooling the system, the mechanical resonator in the transmission line resonator system is easier to achieve the ground state cooling than in optical cavity. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

2017-01-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation......, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction...... power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination...

X-ray quantum optics with Moessbauer nuclei in thin-film cavities

Energy Technology Data Exchange (ETDEWEB)

Heeg, Kilian Peter

2014-12-09

In this thesis thin-film cavities with embedded Moessbauer nuclei probed by near-resonant X-ray light are studied from a quantum optical perspective. A theoretical framework is developed and compact expressions for the observables are derived for the linear excitation regime, which is encountered in current experiments. Even advanced cavity layouts can be modeled in excellent agreement with the results of previous experiments and semi-classical approaches. In the absence of magnetic hyperfine splitting, the spectral response of the system is found to be formed by tunable Fano profiles. An experimental implementation of this line shape control allows to extract spectroscopic signatures with high precision and to reconstruct the phase of the nuclear transition in good agreement with the theoretical predictions. The alignment of medium magnetization and polarization control of the X-rays enable to engineer advanced quantum optical level schemes, in which vacuum induced coherence effects are predicted and successfully demonstrated in an experiment. Furthermore, it is shown that group velocity control for x-ray pulses can be achieved in the cavity. A scheme for its observation is proposed and then employed to experimentally confirm sub-luminal X-ray propagation. Finally, non-linear effects, which could become accessible with future light sources, are explored and a non-linear line shape control mechanism is discussed.

Ultrafast Optics: Vector Cavity Laser - Physics and Technology

Science.gov (United States)

2016-06-14

with a quasi- vector cavity both numerically and experimentally. It is expected that through the study a deep and comprehensive understanding on the...799-801, Jun. 1997. 31. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like pulse in a gain-guided soliton fiber laser," Opt...solitons in a ring fiber laser," Optics Communications 281 (22), 5614 (2008). 110. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like

Ultrafast Optics - Vector Cavity Lasers: Physics and Technology

Science.gov (United States)

2016-06-14

with a quasi- vector cavity both numerically and experimentally. It is expected that through the study a deep and comprehensive understanding on the...799-801, Jun. 1997. 31. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like pulse in a gain-guided soliton fiber laser," Opt...solitons in a ring fiber laser," Optics Communications 281 (22), 5614 (2008). 110. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like

Ordering-induced changes in the optical spectra of semiconductor alloys

International Nuclear Information System (INIS)

Bernard, J.E.; Wei, S.; Wood, D.M.; Zunger, A.

1988-01-01

It is shown how the recently predicted and subsequently observed spontaneous long-range ordering of pseudobinary A/sub 0.5/B/sub 0.5/C isovalent semiconductor alloys into the (AC) 1 (BC) 1 superlattice structure (a CuAuI-type crystal) gives rise to characteristic changes in the optical and photoemission spectra. We predict new direct transitions and substantial splittings of transitions absent in the disordered alloy

Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

International Nuclear Information System (INIS)

Wang Hanchao; Huang Lirong; Shi Zhongwei

2011-01-01

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated. The amplified spontaneous emission (ASE) spectrum and gain were measured and analyzed. It is shown that the ASE spectrum and gain characteristic are greatly influencedby the distribution of the injection current density. By changing the injection current density of two electrodes, the full width at half maximum, peak wavelength, peak power of the ASE spectrum and the gain characteristic can be easily controlled. (semiconductor devices)

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2008-01-01

This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

Optical coherent control in semiconductors

DEFF Research Database (Denmark)

Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

2001-01-01

of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

Optimal operating conditions for external cavity semiconductor laser optical chaos communication system

International Nuclear Information System (INIS)

Priyadarshi, S; Pierce, I; Hong, Y; Shore, K A

2012-01-01

In optical chaos communications a message is masked in the noise-like broadband output of a chaotic transmitter laser, and message recovery is enabled through the synchronization of the transmitter and the (chaotic) receiver laser. Key issues are to identify the laser operating conditions which provide the highest quality synchronization conditions and those which provide optimized message extraction. In general such operating conditions are not coincident. In this paper numerical simulations are performed with the aim of identifying a regime of operation where the highest quality synchronization and optimizing message extraction efficiency are achieved simultaneously. Use of such an operating regime will facilitate practical deployment of optical chaos communications systems without the need for re-adjustment of laser operating conditions in the field. (paper)

Overlapping double potential wells in a single optical microtube cavity with vernier-scale-like tuning effect

International Nuclear Information System (INIS)

Madani, A.; Schmidt, O. G.; Bolaños Quiñones, V. A.; Ma, L. B.; Jorgensen, M. R.; Miao, S. D.

2016-01-01

Spatially and temporally overlapping double potential wells are realized in a hybrid optical microtube cavity due to the coexistence of an aggregate of luminescent quantum dots embedded in the tube wall and the cone-shaped tube's geometry. The double potential wells produce two independent sets of optical modes with different sets of mode numbers, indicating phase velocity separation for the modes overlapping at the same frequency. The overlapping mode position can be tuned by modifying the tube cavity, where these mode sets shift with different magnitudes, allowing for a vernier-scale-like tuning effect.

Optical Resonance of A Three-Level System in Semiconductor Quantum Dots

Directory of Open Access Journals (Sweden)

Nguyen Van Hieu

2017-11-01

Full Text Available The optical resonance of a three-level system of the strongly correlated electrons in the twolevel semiconductor quantum dot interacting with the linearly polarized monochromatic electromagnetic radiation is studied. With the application of the Green function method the expressions of the state vectors and the energies of the stationary states of the system in the regime of the optical resonance are derived. The Rabi oscillations of the electron populations at different levels as well as the Rabi splitting of the peaks in the photon emission spectra are investigated. PACS numbers: 71.35.-y, 78.55.-m, 78.67.Hc

Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function.

Science.gov (United States)

Lee, Thomas T; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P; Smith, Stephen J; Shenoy, Krishna V; Harris, James S

2006-01-01

Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

Nonlinear optics response of semiconductor quantum wells under high magnetic fields

International Nuclear Information System (INIS)

Chemla, D.S.

1993-07-01

Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW's as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H → ∞. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed

Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

DEFF Research Database (Denmark)

Champagne, A.; Camel, J.; Maciejko, R.

2002-01-01

The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived and ...

Cavity-enhanced spectroscopies

CERN Document Server

van Zee, Roger

2003-01-01

""Cavity-Enhanced Spectroscopy"" discusses the use of optical resonators and lasers to make sensitive spectroscopic measurements. This volume is written by the researcchers who pioneered these methods. The book reviews both the theory and practice behind these spectroscopic tools and discusses the scientific discoveries uncovered by these techniques. It begins with a chapter on the use of optical resonators for frequency stabilization of lasers, which is followed by in-depth chapters discussing cavity ring-down spectroscopy, frequency-modulated, cavity-enhanced spectroscopy, intracavity spectr

Method of developing all-optical trinary JK, D-type, and T-type flip-flops using semiconductor optical amplifiers.

Science.gov (United States)

Garai, Sisir Kumar

2012-04-10

To meet the demand of very fast and agile optical networks, the optical processors in a network system should have a very fast execution rate, large information handling, and large information storage capacities. Multivalued logic operations and multistate optical flip-flops are the basic building blocks for such fast running optical computing and data processing systems. In the past two decades, many methods of implementing all-optical flip-flops have been proposed. Most of these suffer from speed limitations because of the low switching response of active devices. The frequency encoding technique has been used because of its many advantages. It can preserve its identity throughout data communication irrespective of loss of light energy due to reflection, refraction, attenuation, etc. The action of polarization-rotation-based very fast switching of semiconductor optical amplifiers increases processing speed. At the same time, tristate optical flip-flops increase information handling capacity.

Stability of period-one (P1) oscillations generated by semiconductor lasers subject to optical injection or optical feedback.

Science.gov (United States)

Lin, Lyu-Chih; Liu, Ssu-Hsin; Lin, Fan-Yi

2017-10-16

We study the stability of period-one (P1) oscillations experimentally generated by semiconductor lasers subject to optical injection (OI) and by those subject to optical feedback (OF). With unique advantages of broad frequency tuning range and large sideband rejection ratio, P1 oscillations can be useful in applications such as photonic microwave generation, radio-over-fiber communication, and laser Doppler velocimeter. The stability of the P1 oscillations is critical for these applications, which can be affected by spontaneous emission and fluctuations in both temperature and injection current. Although linewidths of P1 oscillations generated by various schemes have been reported, the mechanisms and roles which each of the OI and the OF play have however not been investigated in detail. To characterize the stability of the P1 oscillations generated by the OI and the OF schemes, we measure the linewidths and linewidth reduction ratios (LRRs) of the P1 oscillations. The OF scheme has a narrowest linewidth of 0.21 ± 0.03 MHz compared to 4.7 ± 0.6 MHz in the OI scheme. In the OF scheme, a much larger region of LRRs higher than 90% is also found. The superior stability of the OF scheme is benefited by the fact that the P1 oscillations in the OF scheme are originated from the undamped relaxation oscillation of a single laser and can be phase-locked to one of its external cavity modes, whereas those in the OI scheme come from two independent lasers which bear no phase relation. Moreover, excess P1 linewidth broadening in the OI scheme caused by fluctuation in injection parameters associated with frequency jitter and relative intensity noise (RIN) is also minimized in the OF scheme.

Microwave phase shifter with controllable power response based on slow- and fast-light effects in semiconductor optical amplifiers.

Science.gov (United States)

Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

2009-04-01

We suggest and experimentally demonstrate a method for increasing the tunable rf phase shift of semiconductor waveguides while at the same time enabling control of the rf power. This method is based on the use of slow- and fast-light effects in a cascade of semiconductor optical amplifiers combined with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of approximately 240 degrees at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique is scalable to more amplifiers and should allow realization of an rf phase shift of 360 degrees.

Coherent stacking of picosecond laser pulses in a high-Q optical cavity for accelerator applications

International Nuclear Information System (INIS)

Androsov, V.P.; Karnaukhov, I.M.; Telegin, Yu.N.

2007-01-01

We have performed the harmonic analysis of the steady-state coherent pulse-stacking process in a high-Q Fabry-Perot cavity. The expression for the stacked pulse shape is obtained as a function of both the laser cavity and pulse-stacking cavity parameters. We have also estimated the pulse power gains attainable in the laser-optical system of NESTOR storage ring, which is under development at Kharkov Institute of Physics and Technology. It is shown that high power gains (∼10 4 ) can be, in principle, achieved in a cavity, formed with low-absorption, high reflectivity (R ∼ 0.9999) mirrors, if the laser cavity length will differ exactly by half wavelength from the pulse-stacking cavity length. It implies development of the sophisticated frequency stabilization loop for maintaining the cavity length constant within a sub-nanometer range. At the same time, power gains of ∼10 3 can be obtained with medium reflectivity mirrors (R ∼ 0.999) at considerably lower cost

The dynamical complexity of optically injected semiconductor lasers

International Nuclear Information System (INIS)

Wieczorek, S.; Krauskopf, B.; Simpson, T.B.; Lenstra, D.

2005-01-01

This report presents a modern approach to the theoretical and experimental study of complex nonlinear behavior of a semiconductor laser with optical injection-an example of a widely applied and technologically relevant forced nonlinear oscillator. We show that the careful bifurcation analysis of a rate equation model yields (i) a deeper understanding of already studied physical phenomena, and (ii) the discovery of new dynamical effects, such as multipulse excitability. Different instabilities, cascades of bifurcations, multistability, and sudden chaotic transitions, which are often viewed as independent, are in fact logically connected into a consistent web of bifurcations via special points called organizing centers. This theoretical bifurcation analysis has predictive power, which manifests itself in good agreement with experimental measurements over a wide range of parameters and diversity of dynamics. While it is dealing with the specific system of an optically injected laser, our work constitutes the state-of-the-art in the understanding and modeling of a nonlinear physical system in general

Optical surface properties and their RF limitations of European XFEL cavities

Energy Technology Data Exchange (ETDEWEB)

Wenskat, Marc

2017-04-15

The inner surface of superconducting cavities plays a crucial role to achieve highest accelerating fields and low losses. The industrial fabrication of cavities for the European X-Ray Free Electron Laser (XFEL) and the International Linear Collider (ILC) HiGrade Research Project allowed for an investigation of this interplay. For the serial inspection of the inner surface, the optical inspection robot OBACHT was constructed and to analyze the large amount of data, represented in the images of the inner surface, an image processing and analysis code was developed and new variables to describe the cavity surface were obtained. This quantitative analysis identified vendor specific surface properties which allow to perform a quality control and assurance during the production. In addition, a strong negative correlation of ρ=-0.93 with a significance of 6σ of the integrated grain boundary area ΣA versus the maximal achievable accelerating field E{sub acc,max} has been found.

Optical surface properties and their RF limitations of European XFEL cavities

International Nuclear Information System (INIS)

Wenskat, Marc

2017-04-01

The inner surface of superconducting cavities plays a crucial role to achieve highest accelerating fields and low losses. The industrial fabrication of cavities for the European X-Ray Free Electron Laser (XFEL) and the International Linear Collider (ILC) HiGrade Research Project allowed for an investigation of this interplay. For the serial inspection of the inner surface, the optical inspection robot OBACHT was constructed and to analyze the large amount of data, represented in the images of the inner surface, an image processing and analysis code was developed and new variables to describe the cavity surface were obtained. This quantitative analysis identified vendor specific surface properties which allow to perform a quality control and assurance during the production. In addition, a strong negative correlation of ρ=-0.93 with a significance of 6σ of the integrated grain boundary area ΣA versus the maximal achievable accelerating field E acc,max has been found.

Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

Science.gov (United States)

Welte, Stephan; Hacker, Bastian; Daiss, Severin; Ritter, Stephan; Rempe, Gerhard

2018-02-01

Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2 μ s . We show an entangling operation between the two atoms by generating a Bell state with 76(2)% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6)% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8)%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

Continuous parametric feedback cooling of a single atom in an optical cavity

Science.gov (United States)

Sames, C.; Hamsen, C.; Chibani, H.; Altin, P. A.; Wilk, T.; Rempe, G.

2018-05-01

We demonstrate a feedback algorithm to cool a single neutral atom trapped inside a standing-wave optical cavity. The algorithm is based on parametric modulation of the confining potential at twice the natural oscillation frequency of the atom, in combination with fast and repetitive atomic position measurements. The latter serve to continuously adjust the modulation phase to a value for which parametric excitation of the atomic motion is avoided. Cooling is limited by the measurement backaction which decoheres the atomic motion after only a few oscillations. Nonetheless, applying this feedback scheme to an ˜5 -kHz oscillation mode increases the average storage time of a single atom in the cavity by a factor of 60 to more than 2 s. In contrast to previous feedback schemes, our algorithm is also capable of cooling a much faster ˜500 -kHz oscillation mode within just microseconds. This demonstrates that parametric cooling is a powerful technique that can be applied in all experiments where optical access is limited.

Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

Directory of Open Access Journals (Sweden)

Stephan Welte

2018-02-01

Full Text Available Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2  μs. We show an entangling operation between the two atoms by generating a Bell state with 76(2% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

A Many-Atom Cavity QED System with Homogeneous Atom-Cavity Coupling

OpenAIRE

Lee, Jongmin; Vrijsen, Geert; Teper, Igor; Hosten, Onur; Kasevich, Mark A.

2013-01-01

We demonstrate a many-atom-cavity system with a high-finesse dual-wavelength standing wave cavity in which all participating rubidium atoms are nearly identically coupled to a 780-nm cavity mode. This homogeneous coupling is enforced by a one-dimensional optical lattice formed by the field of a 1560-nm cavity mode.

Coherent dynamics in semiconductors

DEFF Research Database (Denmark)

Hvam, Jørn Märcher

1998-01-01

enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

An investigation into the use of large area silicon semiconductors in microwave systems

International Nuclear Information System (INIS)

Holliday, H.R.

1999-09-01

Semiconductor microwave devices are usually manufactured using micron or sub-micron geometries. The equipment needed for these techniques has a high capital cost and demands high overheads. The material traditionally processed for microwave applications is gallium arsenide but during the period of this investigation a move towards the use of silicon and silicon germanium has emerged. This study, which is essentially practical, covers a range of new ideas for components using large area silicon devices. In the course of the study considerable progress has also been made in the understanding of the behaviour of silicon at microwave frequencies, and some of the initial Concepts were shown to be invalid. An accurate determination of the dielectric constant of silicon has been made using quasi optical techniques at microwave frequencies. The fabrication techniques described originate from methods used at Q-par Angus to manufacture large area silicon nuclear radiation detectors. Developed at the University of Birmingham, these are 'wet chemistry' methods that preclude the need for diffusion or other conventional semiconductor processing techniques. Novel microwave components have been developed using these techniques. These include an optically controlled attenuator with multioctave bandwidth and good dynamic range; window devices to reduce the radar cross section of microwave antennas; and microwave cavity devices including a variable-Q cavity. Concepts for millimeter wave filters are discussed, as are areas for further research. During the attenuator study Wheeler's equations have been extended to cover truncated microstrip. It was observed at an early stage in the work that optical excitation was very effective as a method of controlling the devices. This fits well with current trends in electro-optical devices. The piezo resistance effect in silicon has been briefly investigated and a mechanical attenuator exploiting this effect has been developed. (author)

Optical conductivity and optical effective mass in a high-mobility organic semiconductor: Implications for the nature of charge transport

KAUST Repository

Li, Yuan

2014-12-03

We present a multiscale modeling of the infrared optical properties of the rubrene crystal. The results are in very good agreement with the experimental data that point to nonmonotonic features in the optical conductivity spectrum and small optical effective masses. We find that, in the static-disorder approximation, the nonlocal electron-phonon interactions stemming from low-frequency lattice vibrations can decrease the optical effective masses and lead to lighter quasiparticles. On the other hand, the charge-transport and infrared optical properties of the rubrene crystal at room temperature are demonstrated to be governed by localized carriers driven by inherent thermal disorders. Our findings underline that the presence of apparently light carriers in high-mobility organic semiconductors does not necessarily imply bandlike transport.

Optical conductivity and optical effective mass in a high-mobility organic semiconductor: Implications for the nature of charge transport

KAUST Repository

Li, Yuan; Yi, Yuanping; Coropceanu, Veaceslav; Bredas, Jean-Luc

2014-01-01

We present a multiscale modeling of the infrared optical properties of the rubrene crystal. The results are in very good agreement with the experimental data that point to nonmonotonic features in the optical conductivity spectrum and small optical effective masses. We find that, in the static-disorder approximation, the nonlocal electron-phonon interactions stemming from low-frequency lattice vibrations can decrease the optical effective masses and lead to lighter quasiparticles. On the other hand, the charge-transport and infrared optical properties of the rubrene crystal at room temperature are demonstrated to be governed by localized carriers driven by inherent thermal disorders. Our findings underline that the presence of apparently light carriers in high-mobility organic semiconductors does not necessarily imply bandlike transport.

Optical bistability in a single-sided cavity coupled to a quantum channel

Science.gov (United States)

Payravi, M.; Solookinejad, Gh; Jabbari, M.; Nafar, M.; Ahmadi Sangachin, E.

2018-06-01

In this paper, we discuss the long wavelength optical reflection and bistable behavior of an InGaN/GaN quantum dot nanostructure coupled to a single-sided cavity. It is found that due to the presence of a strong coupling field, the reflection coefficient can be controlled at long wavelength, which is essential for adjusting the threshold of reflected optical bistability. Moreover, the phase shift features of the reflection pulse inside an electromagnetically induced transparency window are also discussed.

Single-shot quantum nondemolition measurement of a quantum-dot electron spin using cavity exciton-polaritons

Science.gov (United States)

Puri, Shruti; McMahon, Peter L.; Yamamoto, Yoshihisa

2014-10-01

We propose a scheme to perform single-shot quantum nondemolition (QND) readout of the spin of an electron trapped in a semiconductor quantum dot (QD). Our proposal relies on the interaction of the QD electron spin with optically excited, quantum well (QW) microcavity exciton-polaritons. The spin-dependent Coulomb exchange interaction between the QD electron and cavity polaritons causes the phase and intensity response of left circularly polarized light to be different than that of right circularly polarized light, in such a way that the QD electron's spin can be inferred from the response to a linearly polarized probe reflected or transmitted from the cavity. We show that with careful device design it is possible to essentially eliminate spin-flip Raman transitions. Thus a QND measurement of the QD electron spin can be performed within a few tens of nanoseconds with fidelity ˜99.95%. This improves upon current optical QD spin readout techniques across multiple metrics, including speed and scalability.

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

DEFF Research Database (Denmark)

Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

2009-01-01

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

Overlapping double potential wells in a single optical microtube cavity with vernier-scale-like tuning effect

Energy Technology Data Exchange (ETDEWEB)

Madani, A.; Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer Str. 70, 09107 Chemnitz (Germany); Bolaños Quiñones, V. A.; Ma, L. B., E-mail: l.ma@ifw-dresden.de; Jorgensen, M. R. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Miao, S. D. [Anhui Key Lab of Controllable Chemical Reaction and Material Chemical Engineering, School of Chemical Engineering, Hefei University of Technology, Tunxi Road. 193, Hefei, Anhui 230009 (China)

2016-04-25

Spatially and temporally overlapping double potential wells are realized in a hybrid optical microtube cavity due to the coexistence of an aggregate of luminescent quantum dots embedded in the tube wall and the cone-shaped tube's geometry. The double potential wells produce two independent sets of optical modes with different sets of mode numbers, indicating phase velocity separation for the modes overlapping at the same frequency. The overlapping mode position can be tuned by modifying the tube cavity, where these mode sets shift with different magnitudes, allowing for a vernier-scale-like tuning effect.

Impact of optical feedback on current-induced polarization behavior of 1550 nm vertical-cavity surface-emitting lasers.

Science.gov (United States)

Deng, Tao; Wu, Zheng-Mao; Xie, Yi-Yuan; Wu, Jia-Gui; Tang, Xi; Fan, Li; Panajotov, Krassimir; Xia, Guang-Qiong

2013-06-01

Polarization switching (PS) between two orthogonal linearly polarized fundamental modes is experimentally observed in commercial free-running 1550 nm vertical-cavity surface-emitting lasers (VCSELs) (Raycan). The characteristics of this PS are strongly modified after introducing a polarization-preserved (PP) or polarization-orthogonal (PO) optical feedback. Under the case that the external cavity is approximately 30 cm, the PP optical feedback results in the PS point shifting toward a lower injection current, and the region within which the two polarization modes coexist is enlarged with the increase of the PP feedback strength. Under too-strong PP feedback levels, the PS disappears. The impact of PO optical feedback on VCSEL polarization behavior is quite similar to that of PP optical feedback, but larger feedback strength is needed to obtain similar results.

Effects of two-photon absorption on all optical logic operation based on quantum-dot semiconductor optical amplifiers

Science.gov (United States)

Zhang, Xiang; Dutta, Niloy K.

2018-01-01

We investigate all-optical logic operation in quantum-dot semiconductor optical amplifier (QD-SOA) based Mach-Zehnder interferometer considering the effects of two-photon absorption (TPA). TPA occurs during the propagation of sub-picosecond pulses in QD-SOA, which leads to a change in carrier recovery dynamics in quantum-dots. We utilize a rate equation model to take into account carrier refill through TPA and nonlinear dynamics including carrier heating and spectral hole burning in the QD-SOA. The simulation results show the TPA-induced pumping in the QD-SOA can reduce the pattern effect and increase the output quality of the all-optical logic operation. With TPA, this scheme is suitable for high-speed Boolean logic operation at 320 Gb/s.

The structural and optical constants of Ag2S semiconductor nanostructure in the Far-Infrared.

Science.gov (United States)

Zamiri, Reza; Abbastabar Ahangar, Hossein; Zakaria, Azmi; Zamiri, Golnoosh; Shabani, Mehdi; Singh, Budhendra; Ferreira, J M F

2015-01-01

In this paper a template-free precipitation method was used as an easy and low cost way to synthesize Ag2S semiconductor nanoparticles. The Kramers-Kronig method (K-K) and classical dispersion theory was applied to calculate the optical constants of the prepared samples, such as the reflective index n(ω) and dielectric constant ε(ω) in Far-infrared regime. Nanocrystalline Ag2S was synthesized by a wet chemical precipitation method. Ag2S nanoparticle was characterized by X-ray diffraction, Scanning Electron Microscopy, UV-visible, and FT-IR spectrometry. The refinement of the monoclinic β-Ag2S phase yielded a structure solution similar to the structure reported by Sadanaga and Sueno. The band gap of Ag2S nanoparticles is around 0.96 eV, which is in good agreement with previous reports for the band gap energy of Ag2S nanoparticles (0.9-1.1 eV). The crystallite size of the synthesized particles was obtained by Hall-Williamson plot for the synthesized Ag2S nanoparticles and it was found to be 217 nm. The Far-infrared optical constants of the prepared Ag2S semiconductor nanoparticles were evaluated by means of FTIR transmittance spectra data and K-K method. Graphical abstractThe Far-infrared optical constants of Ag2S semiconductor nanoparticles.

Proposal for the momentum-resolved and time-resolved optical measurement of the current distribution in semiconductors.

Science.gov (United States)

Liu, Jiang-Tao; Su, Fu-Hai; Deng, Xin-Hua; Wang, Hai

2012-05-21

The two-color optical coherence absorption spectrum (QUIC-AB) of semiconductors in the presence of a charge current is investigated. We find that the QUIC-AB depends strongly not only on the amplitude of the electron current but also on the direction of the electron current. Thus, the amplitude and the angular distribution of current in semiconductors can be detected directly in real time with the QUIC-AB.

Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors

Science.gov (United States)

Nashy, El-Shahat H. A.; Al-Ashkar, Emad; Abdel Moez, A.

2012-02-01

Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows.

Studies of optical properties and applications of some mixed ternary semiconductors

International Nuclear Information System (INIS)

Ghosh, P.S.; Ghosh, D.K.; Samanta, L.K.

1989-01-01

Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author)

Design of a compact high-speed optical modulator based on a hybrid plasmonic nanobeam cavity

Science.gov (United States)

Javid, Mohammad Reza; Miri, Mehdi; Zarifkar, Abbas

2018-03-01

A hybrid plasmonic electro-optic modulator based on a polymer-filled one dimensional photonic crystal nanobeam (1D PhCNB) cavity is proposed here. In the proposed structure the optical intensity modulation is realized by shifting the resonant wavelength of the cavity through electrically tuning the refractive index of the electro-optic polymer in the hybrid plasmonic waveguide. As a result of the subwavelength light confinement in the hybrid plasmonic waveguide and the compact footprint of the 1D PhCNB cavity, the designed modulator has the small overall footprint of 3 . 6 μm2 and the required wavelength shift can be achieved by applying very small actuating power. Three dimensional finite-difference time-domain (3D-FDTD) simulations show that the modulation depth of 10.9 dB, and insertion loss of 1.14 dB, along with very high modulation speed of 224 GHz can be achieved in the proposed modulator with very low modulation energy of 0.75 fJ/bit. A comparison between the performance parameters of the proposed modulator and those of previously reported PhCNB based modulators reveals the superior performance of the proposed structure in terms of modulation speed, energy consumption and overall footprint.

Low-photon-number optical switch and AND/OR logic gates based on quantum dot-bimodal cavity coupling system.

Science.gov (United States)

Ma, Shen; Ye, Han; Yu, Zhong-Yuan; Zhang, Wen; Peng, Yi-Wei; Cheng, Xiang; Liu, Yu-Min

2016-01-11

We propose a new scheme based on quantum dot-bimodal cavity coupling system to realize all-optical switch and logic gates in low-photon-number regime. Suppression of mode transmission due to the destructive interference effect is theoretically demonstrated by driving the cavity with two orthogonally polarized pulsed lasers at certain pulse delay. The transmitted mode can be selected by designing laser pulse sequence. The optical switch with high on-off ratio emerges when considering one driving laser as the control. Moreover, the AND/OR logic gates based on photon polarization are achieved by cascading the coupling system. Both proposed optical switch and logic gates work well in ultra-low energy magnitude. Our work may enable various applications of all-optical computing and quantum information processing.

Maximally entangled mixed states of two atoms trapped inside an optical cavity

International Nuclear Information System (INIS)

Li Shangbin; Xu Jingbo

2009-01-01

In some off-resonant cases, the reduced density matrix of two atoms symmetrically coupled with an optical cavity can very approximately approach maximally entangled mixed states or maximal Bell violation mixed states in their evolution. The influence of a phase decoherence on the generation of a maximally entangled mixed state is also discussed

Study of thermally-induced optical bistability and the role of surface treatments in Si-based mid-infrared photonic crystal cavities.

Science.gov (United States)

Shankar, Raji; Bulu, Irfan; Leijssen, Rick; Lončar, Marko

2011-11-21

We report the observation of optical bistability in Si-based photonic crystal cavities operating around 4.5 µm. Time domain measurements indicate that the source of this optical bistability is thermal, with a time constant on the order of 5 µs. Quality (Q) factor improvement is shown by the use of surface treatments (wet processes and annealing), resulting in a significant increase in Q-factor, which in our best devices is on the order of ~45,000 at 4.48 µm. After annealing in a N(2) environment, optical bistability is no longer seen in our cavities. © 2011 Optical Society of America

Cavity-enhanced spectroscopy and sensing

Energy Technology Data Exchange (ETDEWEB)

Gagliardi, Gianluca [CNR-Istituto Nazionale di Ottica (INO), Pozzuoli (Italy); Loock, Hans-Peter (ed.) [Queen' s Univ., Kingston, ON (Canada). Dept. of Chemistry

2014-07-01

The book reviews the dramatic recent advances in the use of optical resonators for high sensitivity and high resolution molecular spectroscopy as well as for chemical, mechanical and physical sensing. It encompasses a variety of cavities including those made of two or more mirrors, optical fiber loops, fiber gratings and spherical cavities. The book focuses on novel techniques and their applications. Each chapter is written by an expert and/or pioneer in the field. These experts also provide the theoretical background in optics and molecular physics where needed. Examples of recent breakthroughs include the use of frequency combs (Nobel prize 2005) for cavity enhanced sensing and spectroscopy, the use of novel cavity materials and geometries, the development of optical heterodyne detection techniques combined to active frequency-locking schemes. These methods allow the use and interrogation of optical resonators with a variety of coherent light sources for trace gas detection and sensing of strain, temperature and pressure.

Cavity-enhanced spectroscopy and sensing

CERN Document Server

Loock, Hans-Peter

2014-01-01

The book reviews the dramatic recent advances in the use of optical resonators for high sensitivity and high resolution molecular spectroscopy as well as for chemical, mechanical and physical sensing.  It encompasses a variety of cavities including those made of two or more mirrors, optical fiber loops, fiber gratings and spherical cavities. The book focuses on novel techniques and their applications. Each chapter is written by an expert and/or pioneer in the field. These experts also provide the theoretical background in optics and molecular physics where needed. Examples of recent breakthroughs include the use of frequency combs (Nobel prize 2005) for cavity enhanced sensing and spectroscopy, the use of novel cavity materials and geometries, the development of optical heterodyne detection techniques combined to active frequency-locking schemes. These methods allow the use and interrogation of optical resonators with a variety of coherent light sources for trace gas detection and sensing of strain, temperat...

Ultrafast Optics: Vector Cavity Fiber Lasers - Physics and Technology

Science.gov (United States)

2016-06-14

with a quasi- vector cavity both numerically and experimentally. It is expected that through the study a deep and comprehensive understanding on the...799-801, Jun. 1997. 31. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like pulse in a gain-guided soliton fiber laser," Opt...solitons in a ring fiber laser," Optics Communications 281 (22), 5614 (2008). 110. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like

Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

International Nuclear Information System (INIS)

Ma Li; Zhu Hong-Liang; Liang Song; Zhao Ling-Juan; Chen Ming-Hua

2013-01-01

Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback (DFB) lasers using varied ridge width with a 4 × 1-multimode-interference (MMI) optical combiner and a semiconductor optical amplifier (SOA) is demonstrated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio (SMSR) exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Fully tunable 360° microwave photonic phase shifter based on a single semiconductor optical amplifier.

Science.gov (United States)

Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

2011-08-29

A fully tunable microwave photonic phase shifter involving a single semiconductor optical amplifier (SOA) is proposed and demonstrated. 360° microwave phase shift has been achieved by tuning the carrier wavelength and the optical input power injected in an SOA while properly profiting from the dispersion feature of a conveniently designed notch filter. It is shown that the optical filter can be advantageously employed to switch between positive and negative microwave phase shifts. Numerical calculations corroborate the experimental results showing an excellent agreement.

All-optical logic gates and wavelength conversion via the injection locking of a Fabry-Perot semiconductor laser

Science.gov (United States)

Harvey, E.; Pochet, M.; Schmidt, J.; Locke, T.; Naderi, N.; Usechak, N. G.

2013-03-01

This work investigates the implementation of all-optical logic gates based on optical injection locking (OIL). All-optical inverting, NOR, and NAND gates are experimentally demonstrated using two distributed feedback (DFB) lasers, a multi-mode Fabry-Perot laser diode, and an optical band-pass filter. The DFB lasers are externally modulated to represent logic inputs into the cavity of the multi-mode Fabry-Perot slave laser. The input DFB (master) lasers' wavelengths are aligned with the longitudinal modes of the Fabry-Perot slave laser and their optical power is used to modulate the injection conditions in the Fabry-Perot slave laser. The optical band-pass filter is used to select a Fabry- Perot mode that is either suppressed or transmitted given the logic state of the injecting master laser signals. When the input signal(s) is (are) in the on state, injection locking, and thus the suppression of the non-injected Fabry-Perot modes, is induced, yielding a dynamic system that can be used to implement photonic logic functions. Additionally, all-optical photonic processing is achieved using the cavity-mode shift produced in the injected slave laser under external optical injection. The inverting logic case can also be used as a wavelength converter — a key component in advanced wavelength-division multiplexing networks. As a result of this experimental investigation, a more comprehensive understanding of the locking parameters involved in injecting multiple lasers into a multi-mode cavity and the logic transition time is achieved. The performance of optical logic computations and wavelength conversion has the potential for ultrafast operation, limited primarily by the photon decay rate in the slave laser.

Metallic nanoshells with semiconductor cores: optical characteristics modified by core medium properties.

Science.gov (United States)

Bardhan, Rizia; Grady, Nathaniel K; Ali, Tamer; Halas, Naomi J

2010-10-26

It is well-known that the geometry of a nanoshell controls the resonance frequencies of its plasmon modes; however, the properties of the core material also strongly influence its optical properties. Here we report the synthesis of Au nanoshells with semiconductor cores of cuprous oxide and examine their optical characteristics. This material system allows us to systematically examine the role of core material on nanoshell optical properties, comparing Cu(2)O core nanoshells (ε(c) ∼ 7) to lower core dielectric constant SiO(2) core nanoshells (ε(c) = 2) and higher dielectric constant mixed valency iron oxide nanoshells (ε(c) = 12). Increasing the core dielectric constant increases nanoparticle absorption efficiency, reduces plasmon line width, and modifies plasmon energies. Modifying the core medium provides an additional means of tailoring both the near- and far-field optical properties in this unique nanoparticle system.

Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

Science.gov (United States)

Wang, M.; Huang, Y. J.; Ruan, S. C.

2018-04-01

In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

Effective Linewidth of Semiconductor Lasers for Coherent Optical Data Links

DEFF Research Database (Denmark)

Iglesias Olmedo, Miguel; Pang, Xiaodan; Schatz, Richard

2016-01-01

name “Effective Linewidth”. We derive this figure of merit analytically, explore it by numerical simulations and experimentally validate our results by transmitting a 28 Gbaud DP-16QAM over an optical link. Our investigations cover the use of semiconductor lasers both in the transmitter side...... and as a local oscillator at the receiver. The obtained results show that our proposed “effective linewidth” is easy to measure and accounts for frequency noise more accurately, and hence the penalties associated to phase noise in the received signal....

Access to long-term optical memories using photon echoes retrieved from semiconductor spins

Science.gov (United States)

Langer, L.; Poltavtsev, S. V.; Yugova, I. A.; Salewski, M.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

2014-11-01

The ability to store optical information is important for both classical and quantum communication. Achieving this in a comprehensive manner (converting the optical field into material excitation, storing this excitation, and releasing it after a controllable time delay) is greatly complicated by the many, often conflicting, properties of the material. More specifically, optical resonances in semiconductor quantum structures with high oscillator strength are inevitably characterized by short excitation lifetimes (and, therefore, short optical memory). Here, we present a new experimental approach to stimulated photon echoes by transferring the information contained in the optical field into a spin system, where it is decoupled from the optical vacuum field and may persist much longer. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well, the storage time of which could be increased by more than three orders of magnitude, from the picosecond range up to tens of nanoseconds.

Modelling colliding-pulse mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Bischoff, Svend

or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

The system of digital-image optical microscope in semiconductor particle detector development

International Nuclear Information System (INIS)

Han Lixiang; Li Zhankui; Jin Genming; Wang Zhusheng; Xiao Guoqing

2009-01-01

Optical microscopic detection is very important in the process of semiconductor particle detector development. A system of digital-image optical microscope has been constructed with rather low price, which performance is comparable with the moderate-level imports. The system mounts powerful dry objective, and a 2μm resolution could be achieved. Observations with bright and dark field, polarized light,and interference light can be carried out on it. The system have large area on-line monitor,and the photographic device can be controlled by PC. It can be used in the control of defects and contaminations, pattern test, identification of crystal backing, inspection of the smoothness and the flatness of the crystal surface. It can also be used in some precise procedures, such as test, assembly, packaging and repairing. The quality of the bond could be examined by observing the appearance of the bond point and the microscopic structure of the solder. The surface fluctuation can be precisely measured under the microscope with the technology of multi-beam interference. In the article, the application of this system for semiconductor particle detector development has been illustrated, and the construction information has been described in detail. (authors)

Self-slowdown and -advancement of fs pulses in a quantum-dot semiconductor optical amplifier

DEFF Research Database (Denmark)

Poel, Mike van der; Mørk, Jesper; Hvam, Jørn Märcher

2005-01-01

We demonstrate changes in the propagation time of 180 femtosecond pulses in a quantum-dot semiconductor optical amplifier as function of pulse input power and bias current. The results interpreted as a result of pulse reshaping by gain saturation but are also analogous to coherent population osci...

Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis

DEFF Research Database (Denmark)

Mørk, Jesper; Tromborg, Bjarne; Christiansen, Peter Leth

1988-01-01

Near-threshold operation of a semiconductor laser exposed to moderate optical feedback may lead to low-frequency fluctuations. In the same region, a kink is observed in the light-current characteristic. Here it is demonstrated that these nonlinear phenomena are predicted by a noise driven multimode...

Two ions coupled to an optical cavity : from an enhanced quantum computer interface towards distributed quantum computing

International Nuclear Information System (INIS)

Casabone, B.

2015-01-01

Distributed quantum computing, an approach to scale up the computational power of quantum computers, requires entanglement between nodes of a quantum network. In our research group, two building blocks of schemes to entangle two ion-based quantum computers using cavity-based quantum interfaces have recently been demonstrated: ion-photon entanglement and ion-photon state mapping. In this thesis work, we extend the first building block in order to entangle two ions located in the same optical cavity. The entanglement generated by this protocol is efficient and heralded, and as it does not rely on the fact that ions interact with the same cavity, our results are a stepping stone towards the efficient generation of entanglement of remote ion-based quantum computers. In the second part of this thesis, we discuss how collective effects can be used to improve the performance of a cavity-based quantum interface. We show that by using two ions in the so-called superradiant state, the coupling strength between the two ions and the optical cavity is effectively increased compared to the single-ion case. As a complementary result, the creation of a state of two ions that exhibits a reduced coupling strength to the optical cavity, i.e., a subradiant state, is shown. Finally, we demonstrate a direct application of the increased coupling strength that the superradiant state exhibits by showing an enhanced version of the ion-photon state mapping process. By using the current setup and a second one that is being assembled, we intend to build a quantum network. The heralded ion-ion entanglement protocol presented in this thesis work will be used to entangle ions located in both setups, an experiment that requires photons generated in both apparatuses to be indistinguishable. Collective effects then can be used to modify the waveform of photons exiting the cavity in order to effect the desired photon indistinguishability. (author) [de

Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

Science.gov (United States)

Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

2018-03-01

In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

Characteristics of strain-sensitive photonic crystal cavities in a flexible substrate.

Science.gov (United States)

No, You-Shin; Choi, Jae-Hyuck; Kim, Kyoung-Ho; Park, Hong-Gyu

2016-11-14

High-index semiconductor photonic crystal (PhC) cavities in a flexible substrate support strong and tunable optical resonances that can be used for highly sensitive and spatially localized detection of mechanical deformations in physical systems. Here, we report theoretical studies and fundamental understandings of resonant behavior of an optical mode excited in strain-sensitive rod-type PhC cavities consisting of high-index dielectric nanorods embedded in a low-index flexible polymer substrate. Using the three-dimensional finite-difference time-domain simulation method, we calculated two-dimensional transverse-electric-like photonic band diagrams and the three-dimensional dispersion surfaces near the first Γ-point band edge of unidirectionally strained PhCs. A broken rotational symmetry in the PhCs modifies the photonic band structures and results in the asymmetric distributions and different levels of changes in normalized frequencies near the first Γ-point band edge in the reciprocal space, which consequently reveals strain-dependent directional optical losses and selected emission patterns. The calculated electric fields, resonant wavelengths, and quality factors of the band-edge modes in the strained PhCs show an excellent agreement with the results of qualitative analysis of modified dispersion surfaces. Furthermore, polarization-resolved time-averaged Poynting vectors exhibit characteristic dipole-like emission patterns with preferentially selected linear polarizations, originating from the asymmetric band structures in the strained PhCs.

Quantum-optical magnets with competing short- and long-range interactions: Rydberg-dressed spin lattice in an optical cavity

Directory of Open Access Journals (Sweden)

Jan Gelhausen, Michael Buchhold, Achim Rosch, Philipp Strack

2016-10-01

Full Text Available The fields of quantum simulation with cold atoms [1] and quantum optics [2] are currently being merged. In a set of recent pathbreaking experiments with atoms in optical cavities [3,4] lattice quantum many-body systems with both, a short-range interaction and a strong interaction potential of infinite range -mediated by a quantized optical light field- were realized. A theoretical modelling of these systems faces considerable complexity at the interface of: (i spontaneous symmetry-breaking and emergent phases of interacting many-body systems with a large number of atoms $N\\rightarrow\\infty$, (ii quantum optics and the dynamics of fluctuating light fields, and (iii non-equilibrium physics of driven, open quantum systems. Here we propose what is possibly the simplest, quantum-optical magnet with competing short- and long-range interactions, in which all three elements can be analyzed comprehensively: a Rydberg-dressed spin lattice [5] coherently coupled to a single photon mode. Solving a set of coupled even-odd sublattice Master equations for atomic spin and photon mean-field amplitudes, we find three key results. (R1: Superradiance and a coherent photon field can coexist with spontaneously broken magnetic translation symmetry. The latter is induced by the short-range nearest-neighbor interaction from weakly admixed Rydberg levels. (R2: This broken even-odd sublattice symmetry leaves its imprint in the light via a novel peak in the cavity spectrum beyond the conventional polariton modes. (R3: The combined effect of atomic spontaneous emission, drive, and interactions can lead to phases with anomalous photon number oscillations. Extensions of our work include nano-photonic crystals coupled to interacting atoms and multi-mode photon dynamics in Rydberg systems.

Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors.

Science.gov (United States)

Nashy, El-Shahat H A; Al-Ashkar, Emad; Moez, A Abdel

2012-02-01

Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows. Copyright © 2011 Elsevier B.V. All rights reserved.

InP femtosecond mode-locked laser in a compound feedback cavity with a switchable repetition rate

Science.gov (United States)

Lo, Mu-Chieh; Guzmán, Robinson; Carpintero, Guillermo

2018-02-01

A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities are coupled by using on-chip reflectors at both ends, enabling harmonic mode locking. By changing DC-bias conditions, optical mode spacing from 50 to 450 GHz is experimentally demonstrated. Ultrafast pulses shorter than 0.3 ps emitted from this laser diode are shown in autocorrelation traces.

Experimental control of power dropouts by current modulation in a semiconductor laser with optical feedback

International Nuclear Information System (INIS)

Ticos, Catalin M; Andrei, Ionut R; Pascu, Mihail L; Bulinski, Mircea

2011-01-01

The injection current of an external-cavity semiconductor laser working in a regime of low-frequency fluctuations (LFFs) is modulated at several MHz. The rate of power dropouts in the laser emission is correlated with the amplitude and frequency of the modulating signal. The occurrence of dropouts becomes more regular when the laser is driven at 7 MHz, which is close to the dominant frequency of dropouts in the solitary laser. Driving the laser at 10 MHz also induces dropouts with a periodicity of 0.1 μs, resulting in LFFs with two dominant frequencies.

Numerical and Experimental Study of the Q Factor of High-Q Micropillar Cavities

DEFF Research Database (Denmark)

Gregersen, Niels; Reitzenstein, S.; Kistner, C.

2010-01-01

Micropillar cavities are potential candidates for high-efficiency single-photon sources and are testbeds for cavity quantum electrodynamics experiments. In both applications a high quality (Q) factor is desired. It was recently shown that the Q of high-Q semiconductor micropillar cavities exhibit...

The role of phonon scattering in the indistinguishability of photons emitted from semiconductor cavity QED systems

DEFF Research Database (Denmark)

Nielsen, Per Kær; Gregersen, Niels; Mørk, Jesper

2013-01-01

A solid-state single-photon source emitting indistinguishable photons on-demand is an essential component of linear optics quantum computing schemes. However, the emitter will inevitably interact with the solid-state environment causing decoherence and loss of indistinguishability. In this paper......, we present a comprehensive theoretical treatment of the influence of phonon scattering on the coherence properties of single photons emitted from semiconductor quantum dots. We model decoherence using a full microscopic theory and compare with standard Markovian approximations employing Lindblad...

Efficient continuous-wave eye-safe region signal output from intra-cavity singly resonant optical parametric oscillator

International Nuclear Information System (INIS)

Li Bin; Ding Xin; Sheng Quan; Yin Su-Jia; Shi Chun-Peng; Li Xue; Wen Wu-Qi; Yao Jian-Quan; Yu Xuan-Yi

2012-01-01

We report an efficient continuous-wave (CW) tunable intra-cavity singly resonant optical parametric oscillator based on the multi-period periodically poled lithium niobate and using a laser diode (LD) end-pumped CW 1064 nm Nd:YVO 4 laser as the pump source. A highly efficiency CW operation is realized through a careful cavity design for mode matching and thermal stability. The signal tuning range is 1401–1500 nm obtained by varying the domain period. The maximum output power of 2.2 W at 1500 nm is obtained with a 17.1 W 808 nm LD power and the corresponding conversion efficiency is 12.9%. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Stacked optical antennas for plasmon propagation in a 5 nm-confined cavity

KAUST Repository

Saeed, A.; Panaro, S.; Zaccaria, R. Proietti; Raja, W.; Liberale, Carlo; Dipalo, M.; Messina, G. C.; Wang, H.; De Angelis, F.; Toma, A.

2015-01-01

The sub-wavelength concentration and propagation of electromagnetic energy are two complementary aspects of plasmonics that are not necessarily co-present in a single nanosystem. Here we exploit the strong nanofocusing properties of stacked optical antennas in order to highly concentrate the electromagnetic energy into a 5nm metal-insulator-metal (MIM) cavity and convert free radiation into guided modes. The proposed nano-architecture combines the concentration properties of optical nanoantennas with the propagation capability of MIM systems, paving the way to highly miniaturized on-chip plasmonic waveguiding. © 2015, Nature Publishing Group. All rights reserved.

Stacked optical antennas for plasmon propagation in a 5 nm-confined cavity

KAUST Repository

Saeed, A.

2015-06-09

The sub-wavelength concentration and propagation of electromagnetic energy are two complementary aspects of plasmonics that are not necessarily co-present in a single nanosystem. Here we exploit the strong nanofocusing properties of stacked optical antennas in order to highly concentrate the electromagnetic energy into a 5nm metal-insulator-metal (MIM) cavity and convert free radiation into guided modes. The proposed nano-architecture combines the concentration properties of optical nanoantennas with the propagation capability of MIM systems, paving the way to highly miniaturized on-chip plasmonic waveguiding. © 2015, Nature Publishing Group. All rights reserved.

Comprehensive experimental analysis of nonlinear dynamics in an optically-injected semiconductor laser

Directory of Open Access Journals (Sweden)

Kevin Schires

2011-09-01

Full Text Available We present the first comprehensive experimental study, to our knowledge, of the routes between nonlinear dynamics induced in a semiconductor laser under external optical injection based on an analysis of time-averaged measurements of the optical and RF spectra and phasors of real-time series of the laser output. The different means of analysis are compared for several types of routes and the benefits of each are discussed in terms of the identification and mapping of the nonlinear dynamics. Finally, the results are presented in a novel audio/video format that describes the evolution of the dynamics with the injection parameters.

Experimental Study of Electronic Quantum Interference, Photonic Crystal Cavity, Photonic Band Edge Effects for Optical Amplification

Science.gov (United States)

2016-01-26

AFRL-RV-PS- AFRL-RV-PS- TR-2016-0003 TR-2016-0003 EXPERIMENTAL STUDY OF ELECTRONIC QUANTUM INTERFERENCE , PHOTONIC CRYSTAL CAVITY, PHOTONIC BAND...EDGE EFFECTS FOR OPTICAL AMPLIFICATION Shawn-Yu Lin Rensselaer Polytechnic Institute 110 8th Street Troy, New York 12180 26 Jan 2016 Final Report...2014 – 11 Jan 2016 4. TITLE AND SUBTITLE Experimental Study of Electronic Quantum Interference , Photonic Crystal Cavity, Photonic Band Edge Effects

All-optical clocked flip-flops and random access memory cells using the nonlinear polarization rotation effect of low-polarization-dependent semiconductor optical amplifiers

Science.gov (United States)

Wang, Yongjun; Liu, Xinyu; Tian, Qinghua; Wang, Lina; Xin, Xiangjun

2018-03-01

Basic configurations of various all-optical clocked flip-flops (FFs) and optical random access memory (RAM) based on the nonlinear polarization rotation (NPR) effect of low-polarization-dependent semiconductor optical amplifiers (SOA) are proposed. As the constituent elements, all-optical logic gates and all-optical SR latches are constructed by taking advantage of the SOA's NPR switch. Different all-optical FFs (AOFFs), including SR-, D-, T-, and JK-types as well as an optical RAM cell were obtained by the combination of the proposed all-optical SR latches and logic gates. The effectiveness of the proposed schemes were verified by simulation results and demonstrated by a D-FF and 1-bit RAM cell experimental system. The proposed all-optical clocked FFs and RAM cell are significant to all-optical signal processing.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

Science.gov (United States)

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Optical microfiber-based photonic crystal cavity

International Nuclear Information System (INIS)

Yu, Yang; Sun, Yi-zhi; Li, Zhi-yuan; Ding, Wei; Andrews, Steve

2016-01-01

Using a focused ion beam milling technique, we fabricate broad stop band (∼10% wide) photonic crystal (PhC) cavities in adiabatically-tapered silica fibers. Abrupt structural design of PhC mirrors efficiently reduces radiation loss, increasing the cavity finesse to ∼7.5. Further experiments and simulations verify that the remaining loss is mainly due to Ga ion implantation. Such a microfiber PhC cavity probably has potentials in many light-matter interaction applications. (paper)

Constructions of secure entanglement channels assisted by quantum dots inside single-sided optical cavities

Science.gov (United States)

Heo, Jino; Kang, Min-Sung; Hong, Chang-Ho; Choi, Seong-Gon; Hong, Jong-Phil

2017-08-01

We propose quantum information processing schemes to generate and swap entangled states based on the interactions between flying photons and quantum dots (QDs) confined within optical cavities for quantum communication. To produce and distribute entangled states (Bell and Greenberger-Horne-Zeilinger [GHZ] states) between the photonic qubits of flying photons of consumers (Alice and Bob) and electron-spin qubits of a provider (trust center, or TC), the TC employs the interactions of the QD-cavity system, which is composed of a charged QD (negatively charged exciton) inside a single-sided cavity. Subsequently, the TC constructs an entanglement channel (Bell state and 4-qubit GHZ state) to link one consumer with another through entanglement swapping, which can be realized to exploit a probe photon with interactions of the QD-cavity systems and single-qubit measurements without Bell state measurement, for quantum communication between consumers. Consequently, the TC, which has quantum nodes (QD-cavity systems), can accomplish constructing the entanglement channel (authenticated channel) between two separated consumers from the distributions of entangled states and entanglement swapping. Furthermore, our schemes using QD-cavity systems, which are feasible with a certain probability of success and high fidelity, can be experimentally implemented with technology currently in use.

Composite cavity based fiber optic Fabry–Perot strain sensors demodulated by an unbalanced fiber optic Michelson interferometer with an electrical scanning mirror

International Nuclear Information System (INIS)

Zhang, Jianzhong; Yang, Jun; Sun, Weimin; Yuan, Libo; Jin, Wencai; Peng, G D

2008-01-01

A composite cavity based fiber optic Fabry–Perot strain sensor system, interrogated by a white light source and demodulated by an unbalanced fiber optic Michelson interferometer with an electrical scanning mirror, is proposed and demonstrated. Comparing with the traditional extrinsic fiber optic Fabry–Perot strain sensor, the potential multiplexing capability and the dynamic measurement range are improved simultaneously. At the same time, the measurement stability of the electrical scanning mirror system is improved by the self-referenced signal of the sensor structure

Coupling of erbium dopants to yttrium orthosilicate photonic crystal cavities for on-chip optical quantum memories

Energy Technology Data Exchange (ETDEWEB)

Miyazono, Evan; Zhong, Tian; Craiciu, Ioana; Kindem, Jonathan M.; Faraon, Andrei, E-mail: faraon@caltech.edu [T. J. Watson Laboratory of Applied Physics, California Institute of Technology, 1200 E California Blvd, Pasadena, California 91125 (United States)

2016-01-04

Erbium dopants in crystals exhibit highly coherent optical transitions well suited for solid-state optical quantum memories operating in the telecom band. Here, we demonstrate coupling of erbium dopant ions in yttrium orthosilicate to a photonic crystal cavity fabricated directly in the host crystal using focused ion beam milling. The coupling leads to reduction of the photoluminescence lifetime and enhancement of the optical depth in microns-long devices, which will enable on-chip quantum memories.

18-THz-wide optical frequency comb emitted from monolithic passively mode-locked semiconductor quantum-well laser

Science.gov (United States)

Lo, Mu-Chieh; Guzmán, Robinson; Ali, Muhsin; Santos, Rui; Augustin, Luc; Carpintero, Guillermo

2017-10-01

We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase modulators followed by an extra-cavity SOA as booster amplifier. A 1.8-THz-wide optical comb spectrum is presented with ultrafast pulse that is 0.35-ps-wide. The radio frequency beat note has a 3-dB linewidth of 450 kHz and 35-dB SNR.

Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

Science.gov (United States)

Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

2011-02-28

A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.

Cavity QED experiments with ion Coulomb crystals

DEFF Research Database (Denmark)

Herskind, Peter Fønss; Dantan, Aurélien; Marler, Joan

2009-01-01

Cavity QED experimental results demonstrating collective strong coupling between ensembles of atomic ions cooled into Coulomb crystals and optical cavity fields have been achieved. Collective Zeeman coherence times of milliseconds have furthermore been obtained.......Cavity QED experimental results demonstrating collective strong coupling between ensembles of atomic ions cooled into Coulomb crystals and optical cavity fields have been achieved. Collective Zeeman coherence times of milliseconds have furthermore been obtained....

Collective excitations and supersolid behavior of bosonic atoms inside two crossed optical cavities

Science.gov (United States)

Lang, J.; Piazza, F.; Zwerger, W.

2017-12-01

We discuss the nature of symmetry breaking and the associated collective excitations for a system of bosons coupled to the electromagnetic field of two optical cavities. For the specific configuration realized in a recent experiment at ETH [1, 2], we show that, in absence of direct intercavity scattering and for parameters chosen such that the atoms couple symmetrically to both cavities, the system possesses an approximate U(1) symmetry which holds asymptotically for vanishing cavity field intensity. It corresponds to the invariance with respect to redistributing the total intensity I={I}1+{I}2 between the two cavities. The spontaneous breaking of this symmetry gives rise to a broken continuous translation-invariance for the atoms, creating a supersolid-like order in the presence of a Bose-Einstein condensate. In particular, we show that atom-mediated scattering between the two cavities, which favors the state with equal light intensities {I}1={I}2 and reduces the symmetry to {{Z}}2\\otimes {{Z}}2, gives rise to a finite value ˜ \\sqrt{I} of the effective Goldstone mass. For strong atom driving, this low energy mode is clearly separated from an effective Higgs excitation associated with changes of the total intensity I. In addition, we compute the spectral distribution of the cavity light field and show that both the Higgs and Goldstone mode acquire a finite lifetime due to Landau damping at non-zero temperature.

Isotope effects on the optical spectra of semiconductors

Science.gov (United States)

Cardona, Manuel; Thewalt, M. L. W.

2005-10-01

Since the end of the cold war, macroscopic amounts of separated stable isotopes of most elements have been available “off the shelf” at affordable prices. Using these materials, single crystals of many semiconductors have been grown and the dependence of their physical properties on isotopic composition has been investigated. The most conspicuous effects observed have to do with the dependence of phonon frequencies and linewidths on isotopic composition. These affect the electronic properties of solids through the mechanism of electron-phonon interaction, in particular, in the corresponding optical excitation spectra and energy gaps. This review contains a brief introduction to the history, availability, and characterization of stable isotopes, including their many applications in science and technology. It is followed by a concise discussion of the effects of isotopic composition on the vibrational spectra, including the influence of average isotopic masses and isotopic disorder on the phonons. The final sections deal with the effects of electron-phonon interaction on energy gaps, the concomitant effects on the luminescence spectra of free and bound excitons, with particular emphasis on silicon, and the effects of isotopic composition of the host material on the optical transitions between the bound states of hydrogenic impurities.

Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers

Energy Technology Data Exchange (ETDEWEB)

Böttge, C. N., E-mail: boettge@optics.arizona.edu; Hader, J.; Kilen, I.; Moloney, J. V. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Koch, S. W. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

2014-12-29

A fully microscopic many-body Maxwell–semiconductor Bloch model is used to investigate the influence of the non-equilibrium carrier dynamics on the short-pulse amplification in mode-locked semiconductor microlaser systems. The numerical solution of the coupled equations allows for a self-consistent investigation of the light–matter coupling dynamics, the carrier kinetics in the saturable absorber and the multiple-quantum-well gain medium, as well as the modification of the light field through the pulse-induced optical polarization. The influence of the pulse-induced non-equilibrium modifications of the carrier distributions in the gain medium and the saturable absorber on the single-pulse amplification in the laser cavity is identified. It is shown that for the same structure, quantum wells, and gain bandwidth the non-equilibrium carrier dynamics lead to two preferred operation regimes: one with pulses in the (sub-)100 fs-regime and one with multi-picosecond pulses. The recovery time of the saturable absorber determines in which regime the device operates.

Cavity electromagnetically induced transparency and all-optical switching using ion Coulomb crystals

DEFF Research Database (Denmark)

Albert, Magnus; Dantan, Aurelien Romain; Drewsen, Michael

2011-01-01

The control of one light field by another, ultimately at the single photon level1, 2, 3, 4, 5, 6, 7, is a challenging task that has numerous interesting applications within nonlinear optics4, 5 and quantum information science6, 7, 8. This type of control can only be achieved through highly...... nonlinear interactions, such as those based on electromagnetic induced transparency (EIT)2, 3, 4, 5, 6, 9, 10, 11, 12. Here, we demonstrate for the first time EIT as well as all-optical EIT-based light switching using ion Coulomb crystals situated in an optical cavity. Changes from essentially full...... milestones for future realizations of quantum information processing devices, such as high-efficiency quantum memories8, 13, 14, single-photon transistors15, 16 and single-photon gates4, 6, 9....

Energy Pooling Upconversion in Free Space and Optical Cavities

Science.gov (United States)

LaCount, Michael D.

energy pooling rate efficiency of 99%. This demonstrates that the energy pooling rate can be made faster than its competing processes. Based on the results of this study, a set of design rules was developed to optimize the rate efficiency of energy pooling. Prior to this research, no attempt had been made to determine if energy pooling could be made to out-pace competing processes--i.e. whether or not a molecular system could be designed to utilize energy pooling as an efficient means of upconversion. This initial investigation was part of a larger effort involving a team of researchers at the University of Colorado, Boulder and at the National Renewable Energy Laboratory. After establishing our computational proof-of-concept, we collectively used the new design rules to select an improved system for energy pooling. This consisted of rhodamine 6G and stilbene-420. These molecules were fabricated into a thin film, and the maximum internal quantum yield was measured to be 36% under sufficiently high intensity light. To further increase the efficiency of energy pooling, encapsulation within optical cavities was considered as a way of changing the rate of processes characterized by electric dipole-dipole coupling. This was carried out using a combination of classical electromagnetism, quantum electrodynamics, and perturbation theory. It was found that, in the near field, if the distance of the energy transfer is smaller than the distance from the energy transfer site and the cavity wall, then the electric dipole-dipole coupling tensor is not influenced by the cavity environment and the rates of energy transfer processes are the same as those in free space. Any increase in energy transfer efficiencies that are experimentally measured must therefore be caused by changing the rate of light absorption and emission. This is an important finding because earlier, less rigorous studies had concluded otherwise. It has been previously demonstrated that an optical cavity can be used to

Nonlinear optical diagnostic of semimagnetic semiconductors Pb1-xYb xX (X = S, Se, Te)

International Nuclear Information System (INIS)

Nouneh, K.; Kityk, I.V.; Viennois, R.; Benet, S.; Charar, S.; Plucinski, K.J.

2007-01-01

Nonlinear optical measurements were performed to elucidate the influence of magnetic ions on the behavior of charge carriers in magnetic semiconductors-Pb 1-x Yb x X (X = S, Se, Te at x = 1-3%). It was shown that nonlinear optical methods could be used as sensitive tools for investigations of electron-phonon anharmonicity near low-temperature semiconductor-insulator phase transitions. There exists a difference between surface and bulk-like contributions to the nonlinear optical effects. It was shown that only low-temperature Two Photon Absorption (TPA) oscillator may be related to the number of the electron-phonon anharmonic modes responsible for the observed phase transformation. The explanation of the anomalous temperature dependences is given in accordance with dipole momentum's behaviors determined by low-temperature spin-spin interactions and by electron-phonon anharmonic interactions. We have discovered that low-temperature dependence of specific heat of Pb 1-x R x Te (R = Yb, Pr with x = 3% and 1.6%, respectively) exhibits a non-magnetic order caused by large electron-phonon contributions and structural disorder effects

Mesoscale cavities in hollow-core waveguides for quantum optics with atomic ensembles

Directory of Open Access Journals (Sweden)

Haapamaki C.M.

2016-08-01

Full Text Available Single-mode hollow-core waveguides loaded with atomic ensembles offer an excellent platform for light–matter interactions and nonlinear optics at low photon levels. We review and discuss possible approaches for incorporating mirrors, cavities, and Bragg gratings into these waveguides without obstructing their hollow cores. With these additional features controlling the light propagation in the hollow-core waveguides, one could potentially achieve optical nonlinearities controllable by single photons in systems with small footprints that can be integrated on a chip. We propose possible applications such as single-photon transistors and superradiant lasers that could be implemented in these enhanced hollow-core waveguides.

Surface emission of InxGa1-xN epilayers under strong optical excitation

International Nuclear Information System (INIS)

Jiang, H.X.; Lin, J.Y.; Khan, M.A.; Chen, Q.; Yang, J.W.

1997-01-01

Effects of strong optical excitation on the properties of surface emission from an InGaN/GaN heterostructure grown by metal-organic chemical-vapor deposition have been investigated. An intriguing feature observed was that as the excitation intensity increased the surface emission spectrum evolved abruptly from a single dominating band to two dominating bands at a critical intensity. This phenomenon has a sharp phase transition or a switching character and can be accounted for by (i) the formation of an electron endash hole plasma state in the InGaN vertical cavity under strong optical excitation, (ii) the photoreflectance effect (variation of index of refraction with excitation intensity), and (c) the Fabry endash Pacute erot interference effect in the InGaN vertical cavity. These findings are expected to have impact on the design of the laser structures, in particular on the design of the vertical-cavity surface-emitting laser diodes based on III-nitride wide-band-gap semiconductors. copyright 1997 American Institute of Physics

Simultaneous cooling and entanglement of mechanical modes of a micromirror in an optical cavity

International Nuclear Information System (INIS)

Genes, Claudiu; Vitali, David; Tombesi, Paolo

2008-01-01

Laser cooling of a mechanical mode of a resonator by the radiation pressure of a detuned optical cavity mode has been recently demonstrated by various groups in different experimental configurations. Here, we consider the effect of a second mechanical mode with a close but different resonance frequency. We show that the nearby mechanical resonance is simultaneously cooled by the cavity field, provided that the difference between the two mechanical frequencies is not too small. When this frequency difference becomes smaller than the effective mechanical damping of the secondary mode, the two cooling processes interfere destructively similarly to what happens in electromagnetically induced transparency, and cavity cooling is suppressed in the limit of identical mechanical frequencies. We show that also the entanglement properties of the steady state of the tripartite system crucially depend upon the difference between the two mechanical frequencies. If the latter is larger than the effective damping of the second mechanical mode, the state shows fully tripartite entanglement and each mechanical mode is entangled with the cavity mode. If instead, the frequency difference is smaller, the steady state is a two-mode biseparable state, inseparable only when one splits the cavity mode from the two mechanical modes. In this latter case, the entanglement of each mechanical mode with the cavity mode is extremely fragile with respect to temperature.

Attenuation of an optical wave propagating in a waveguide, formed by layers of a semiconductor heterostructure, owing to scattering on inhomogeneities

International Nuclear Information System (INIS)

Bogatov, Alexandr P; Burmistrov, I S

1999-01-01

The scattering of an optical wave, propagating in a waveguide made up of layers of a semiconductor heterostructure, is analysed. The attenuation coefficient of the wave is found both for quasi-homogeneous single-crystal layers of a semiconductor solid solution and for layers containing quantum dots. (active media)

Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

Science.gov (United States)

Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

2010-02-01

Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

Science.gov (United States)

Huang, Shouting

Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the

Hollow waveguide cavity ringdown spectroscopy

Science.gov (United States)

Dreyer, Chris (Inventor); Mungas, Greg S. (Inventor)

2012-01-01

Laser light is confined in a hollow waveguide between two highly reflective mirrors. This waveguide cavity is used to conduct Cavity Ringdown Absorption Spectroscopy of loss mechanisms in the cavity including absorption or scattering by gases, liquid, solids, and/or optical elements.

Magneto-optical transitions in multilayer semiconductor nanocrystals

CERN Document Server

Climente, J; Jaskolski, W; Aliaga, J I

2003-01-01

Absorption spectra of chemically synthesized uniform and multilayer semiconductor nanocrystals in a magnetic field are investigated theoretically. The nanocrystals are modelled by spherical barrier/well potentials. The electron states are calculated within the effective mass model. A four-band k centre dot p Hamiltonian, accounting for the valence subband mixing, is used to obtain the hole states. The magneto-optical transition spectrum depends strongly on the size and composition of the nanocrystals. In the case of small uniform quantum dots, only the linear Zeeman splitting of the electron and hole energy levels is observed even for very strong magnetic fields. In larger nanocrystals, the quadratic magnetic interaction turns out to be important and the transition spectrum becomes complicated. The most complicated influence of the magnetic field is found in quantum dot-quantum well systems in which the lowest electron and hole states are localized in a thin spherical layer. It is shown that transitions that ...

Optical conductivity calculation of a k.p model semiconductor GaAs incorporating first-order electron-hole vertex correction

Science.gov (United States)

Nurhuda, Maryam; Aziz Majidi, Muhammad

2018-04-01

The role of excitons in semiconducting materials carries potential applications. Experimental results show that excitonic signals also appear in optical absorption spectra of semiconductor system with narrow gap, such as Gallium Arsenide (GaAs). While on the theoretical side, calculation of optical spectra based purely on Density Functional Theory (DFT) without taking electron-hole (e-h) interactions into account does not lead to the appearance of any excitonic signal. Meanwhile, existing DFT-based algorithms that include a full vertex correction through Bethe-Salpeter equation may reveal an excitonic signal, but the algorithm has not provided a way to analyze the excitonic signal further. Motivated to provide a way to isolate the excitonic effect in the optical response theoretically, we develop a method of calculation for the optical conductivity of a narrow band-gap semiconductor GaAs within the 8-band k.p model that includes electron-hole interactions through first-order electron-hole vertex correction. Our calculation confirms that the first-order e-h vertex correction reveals excitonic signal around 1.5 eV (the band gap edge), consistent with the experimental data.

Semiconductors for plasmonics and metamaterials

DEFF Research Database (Denmark)

Naik, G.V.; Boltasseva, Alexandra

2010-01-01

Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

Characterization of CdSe-nanocrystals used in semiconductors for aerospace applications: Production and optical properties

Directory of Open Access Journals (Sweden)

Maroof A. Hegazy

2014-06-01

Full Text Available Semiconductor nanocrystals (NC’s are the materials with dimensions less than 10 nm. When the dimensions of nanocrystals are reduced the bulk bohr diameter, the photo generated electron-hole pair becomes confined and nanocrystal exhibits size dependent upon optical properties. This work is focused on the studying of CdSe semiconductor nanocrystals. These nanocrystals are considered as one of the most widely studies semiconductors because of their size – tunable optical properties from the visible spectrum. CdSe-nanocrystals are produced and obtained throughout the experimental setup initiated at Nano-NRIAG Unit (NNU, which has been constructed and assembled at NRIAG institute. This unit has a specific characterization for preparing chemical compositions, which may be used for solar cell fabrications and space science technology. The materials prepared included cadmium oxide and selinid have sizes ranging between 2.27 nm and 3.75 nm. CdSe-nanocrystals are synthesized in “TOP/TOPO (tri–octyl phosphine/tri–octyl phosphine oxide. Diagnostic tools, include UV analysis, TEM microscope, and X-ray diffraction, which are considered for the analytical studies of the obtained materials. The results show that, in this size regime, the generated particles have unique optical properties, which is achieved from the UV analysis. Also, the TEM image analysis shows the size and shape of the produced particles. These studies are carried out to optimize the photoluminescent efficiency of these nanoparticles. Moreover, the data revealed that, the grain size of nanocrystals is dependent upon the growth time in turn, it leads to a change in the energy gap. Some applications of this class of materials are outlined.

Demonstration of tunable microwave photonic notch filters using slow and fast light effects in semiconductor optical amplifiers

DEFF Research Database (Denmark)

Xue, Weiqi; Sales, Salvador; Mørk, Jesper

2009-01-01

We introduce a novel scheme based on slow and fast light effects in semiconductor optical amplifiers, to implement a microwave photonic notch filter with ~100% fractional tuning range at a microwave frequency of 30 GHz....

Near Infrared Cavity Ring-Down Spectroscopy for Isotopic Analyses of CH4 on Future Martian Surface Missions

Science.gov (United States)

Chen, Y.; Mahaffy P.; Holmes, V.; Burris, J.; Morey, P.; Lehmann, K.K.; Lollar, B. Sherwood; Lacrampe-Couloume, G.; Onstott, T.C.

2014-01-01

A compact Near Infrared Continuous Wave Cavity Ring-Down Spectrometer (near-IR-cw-CRDS) was developed as a candidate for future planetary surface missions. The optical cavity was made of titanium with rugged quartz windows to protect the delicate super cavity from the harsh environmental changes that it would experience during space flight and a Martian surface mission. This design assured the long-term stability of the system. The system applied three distributed feedback laser diodes (DFB-LD), two of which were tuned to the absorption line peaks of (sup 12)CH4 and (sup 13)CH4 at 6046.954 inverse centimeters and 6049.121 inverse centimeters, respectively. The third laser was tuned to a spectral-lines-free region for measuring the baseline cavity loss. The multiple laser design compensated for typical baseline drift of a CRDS system and, thus, improved the overall precision. A semiconductor optical amplifier (SOA) was used instead of an Acousto-Optic Module (AOM) to initiate the cavity ring-down events. It maintained high acquisition rates such as AOM, but consumed less power. High data acquisition rates combined with improved long-term stability yielded precise isotopic measurements in this near-IR region even though the strongest CH4 absorption line in this region is 140 times weaker than that of the strongest mid-IR absorption band. The current system has a detection limit of 1.4 times 10( sup –12) inverse centimeters for (sup 13)CH4. This limit corresponds to approximately 7 parts per trillion volume of CH4 at 100 Torrs. With no further improvements the detection limit of our current near IR-cw-CRDS at an ambient Martian pressure of approximately 6 Torrs (8 millibars) would be 0.25 parts per billion volume for one 3.3 minute long analysis.

Experimental study of disorder in a semiconductor microcavity

Science.gov (United States)

Gurioli, M.; Bogani, F.; Wiersma, D. S.; Roussignol, Ph.; Cassabois, G.; Khitrova, G.; Gibbs, H.

2001-10-01

A detailed study of the structural disorder in wedge semiconductor microcavities (MC's) is presented. We demonstrate that images of the coherent emission from the MC surface can be used for a careful characterization of both intrinsic and extrinsic optical properties of semiconductor MC's. The polariton broadening can be measured directly, avoiding the well-known problem of inhomogeneous broadening due to the MC wedge. A statistical analysis of the spatial line shape of the images of the MC surface shows the presence of static disorder associated with dielectric fluctuations in the Bragg reflector. Moreover, the presence of local fluctuations of the effective cavity length can be detected with subnanometer resolution. The analysis of the resonant Rayleigh scattering (RRS) gives additional information on the origin of the disorder. We find that the RRS is dominated by the scattering of the photonic component of the MC polariton by disorder in the Bragg reflector. Also the RRS is strongly enhanced along the [110] and [11¯0] directions. This peculiar scattering pattern is attributed to misfit dislocations induced by the large thickness of the mismatched AlGaAs alloy in the Bragg mirrors.

Quantum state engineering, purification, and number-resolved photon detection with high-finesse optical cavities

DEFF Research Database (Denmark)

Nielsen, Anne E. B.; Muschik, Christine A.; Giedke, Geza

2010-01-01

We propose and analyze a multifunctional setup consisting of high-finesse optical cavities, beam splitters, and phase shifters. The basic scheme projects arbitrary photonic two-mode input states onto the subspace spanned by the product of Fock states |n>|n> with n=0,1,2,.... This protocol does no...... is especially attractive as a generalization to many modes allows for distribution and purification of entanglement in networks. In an alternative working mode, the setup allows for quantum nondemolition number resolved photodetection in the optical domain....

Quantum noise of a Bose-Einstein condensate in an optical cavity, correlations, and entanglement

International Nuclear Information System (INIS)

Szirmai, G.; Nagy, D.; Domokos, P.

2010-01-01

A Bose-Einstein condensate of ultracold atoms inside the field of a laser-driven optical cavity exhibits dispersive optical bistability. We describe this system by using mean-field approximation and by analyzing the correlation functions of the linearized quantum fluctuations around the mean-field solution. The entanglement and the statistics of the atom-field quadratures are given in the stationary state. It is shown that the mean-field solution, that is, the Bose-Einstein condensate, is robust against entanglement generation for most of the phase diagram.

Quantum noise of a Bose-Einstein condensate in an optical cavity, correlations, and entanglement

Science.gov (United States)

Szirmai, G.; Nagy, D.; Domokos, P.

2010-04-01

A Bose-Einstein condensate of ultracold atoms inside the field of a laser-driven optical cavity exhibits dispersive optical bistability. We describe this system by using mean-field approximation and by analyzing the correlation functions of the linearized quantum fluctuations around the mean-field solution. The entanglement and the statistics of the atom-field quadratures are given in the stationary state. It is shown that the mean-field solution, that is, the Bose-Einstein condensate, is robust against entanglement generation for most of the phase diagram.

Effect of the depolarization field on coherent optical properties in semiconductor quantum dots

Science.gov (United States)

Mitsumori, Yasuyoshi; Watanabe, Shunta; Asakura, Kenta; Seki, Keisuke; Edamatsu, Keiichi; Akahane, Kouichi; Yamamoto, Naokatsu

2018-06-01

We study the photon echo spectrum of self-assembled semiconductor quantum dots using femtosecond light pulses. The spectrum shape changes from a single-peaked to a double-peaked structure as the time delay between the two excitation pulses is increased. The spectrum change is reproduced by numerical calculations, which include the depolarization field induced by the biexciton-exciton transition as well as the conventional local-field effect for the exciton-ground-state transition in a quantum dot. Our findings suggest that various optical transitions in tightly localized systems generate a depolarization field, which renormalizes the resonant frequency with a change in the polarization itself, leading to unique optical properties.

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

Vibration-tolerant narrow-linewidth semiconductor disk laser using novel frequency-stabilisation schemes

Science.gov (United States)

Hunter, Craig R.; Jones, Brynmor E.; Schlosser, Peter; Sørensen, Simon Toft; Strain, Michael J.; McKnight, Loyd J.

2018-02-01

This paper will present developments in narrow-linewidth semiconductor-disk-laser systems using novel frequencystabilisation schemes for reduced sensitivity to mechanical vibrations, a critical requirement for mobile applications. Narrow-linewidth single-frequency lasers are required for a range of applications including metrology and highresolution spectroscopy. Stabilisation of the laser was achieved using a monolithic fibre-optic ring resonator with free spectral range of 181 MHz and finesse of 52 to act as passive reference cavity for the laser. Such a cavity can operate over a broad wavelength range and is immune to a wide band of vibrational frequency noise due to its monolithic implementation. The frequency noise of the locked system has been measured and compared to typical Fabry-Perotlocked lasers using vibration equipment to simulate harsh environments, and analysed here. Locked linewidths of portable, narrow-linewidth laser system for harsh environments that can be flexibly designed for a range of applications.

Radiation-pressure-mediated control of an optomechanical cavity

Science.gov (United States)

Cripe, Jonathan; Aggarwal, Nancy; Singh, Robinjeet; Lanza, Robert; Libson, Adam; Yap, Min Jet; Cole, Garrett D.; McClelland, David E.; Mavalvala, Nergis; Corbitt, Thomas

2018-01-01

We describe and demonstrate a method to control a detuned movable-mirror Fabry-Pérot cavity using radiation pressure in the presence of a strong optical spring. At frequencies below the optical spring resonance, self-locking of the cavity is achieved intrinsically by the optomechanical (OM) interaction between the cavity field and the movable end mirror. The OM interaction results in a high rigidity and reduced susceptibility of the mirror to external forces. However, due to a finite delay time in the cavity, this enhanced rigidity is accompanied by an antidamping force, which destabilizes the cavity. The cavity is stabilized by applying external feedback in a frequency band around the optical spring resonance. The error signal is sensed in the amplitude quadrature of the transmitted beam with a photodetector. An amplitude modulator in the input path to the cavity modulates the light intensity to provide the stabilizing radiation pressure force.

The pursuit of electrically-driven organic semiconductor lasers

NARCIS (Netherlands)

Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

2014-01-01

Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

Noise-Immune Cavity-Enhanced Optical Heterodyne Molecular Spectrometry Modelling Under Saturated Absorption

Science.gov (United States)

Dupré, Patrick

2015-06-01

The Noise-Immune Cavity-Enhanced Optical Heterodyne Molecular Spectrometry (NICE-OHMS) is a modern technique renowned for its ultimate sensitivity, because it combines long equivalent absorption length provided by a high finesse cavity, and a detection theoretically limited by the sole photon-shot-noise. One fallout of the high finesse is the possibility to accumulating strong intracavity electromagnetic fields (EMF). Under this condition, molecular transitions can be easy saturated giving rise to the usual Lamb dips (or hole burning). However, the unusual shape of the basically trichromatic EMF (due to the RF lateral sidebands) induces nonlinear couplings, i.e., new crossover transitions. An analytical methodology will be presented to calculate spectra provided by NICE-OHMS experiments. It is based on the solutions of the equations of motion of an open two-blocked-level system performed in the frequency-domain (optically thin medium). Knowing the transition dipole moment, the NICE-OHMS signals (``absorption-like'' and ``dispersion-like'') can be simulated by integration over the Doppler shifts and by paying attention to the molecular Zeeman sublevels and to the EMF polarization The approach has been validated by discussion experimental data obtained on two transitions of {C2H2} in the near-infrared under moderated saturation. One of the applications of the saturated absorption is to be able to simultaneously determine the transition intensity and the density number while only one these 2 quantities can only be assessed in nonlinear absorption. J. Opt. Soc. Am. B 32, 838 (2015) Optics Express 16, 14689 (2008)

Fabrication of highly nonlinear germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots using atomization doping process and its optical nonlinearity.

Science.gov (United States)

Ju, Seongmin; Watekar, Pramod R; Han, Won-Taek

2011-01-31

Germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots (SQDs) in the core was fabricated by using the atomization process in modified chemical vapor deposition (MCVD) process. The absorption bands attributed to PbTe semiconductor quantum dots in the fiber core were found to appear at around 687 nm and 1055 nm. The nonlinear refractive index measured by the long-period fiber grating (LPG) pair method upon pumping with laser diode at 976.4 nm was estimated to be ~1.5 × 10(-16) m2/W.

Optical Control of Intersubband Absorption in a Multiple Quantum Well-Embedded Semiconductor Microcravity

Science.gov (United States)

Liu, Ansheng; Ning, Cun-Zheng

2000-01-01

Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.

Fiber cavities with integrated mode matching optics.

Science.gov (United States)

Gulati, Gurpreet Kaur; Takahashi, Hiroki; Podoliak, Nina; Horak, Peter; Keller, Matthias

2017-07-17

In fiber based Fabry-Pérot Cavities (FFPCs), limited spatial mode matching between the cavity mode and input/output modes has been the main hindrance for many applications. We have demonstrated a versatile mode matching method for FFPCs. Our novel design employs an assembly of a graded-index and large core multimode fiber directly spliced to a single mode fiber. This all-fiber assembly transforms the propagating mode of the single mode fiber to match with the mode of a FFPC. As a result, we have measured a mode matching of 90% for a cavity length of ~400 μm. This is a significant improvement compared to conventional FFPCs coupled with just a single mode fiber, especially at long cavity lengths. Adjusting the parameters of the assembly, the fundamental cavity mode can be matched with the mode of almost any single mode fiber, making this approach highly versatile and integrable.

Dither Cavity Length Controller with Iodine Locking

Directory of Open Access Journals (Sweden)

Lawson Marty

2016-01-01

Full Text Available A cavity length controller for a seeded Q-switched frequency doubled Nd:YAG laser is constructed. The cavity length controller uses a piezo-mirror dither voltage to find the optimum length for the seeded cavity. The piezo-mirror dither also dithers the optical frequency of the output pulse. [1]. This dither in optical frequency is then used to lock to an Iodine absorption line.

Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 - 800 nm

International Nuclear Information System (INIS)

Il'chenko, S N; Kostin, Yu O; Kukushkin, I A; Ladugin, M A; Lapin, P I; Lobintsov, A A; Marmalyuk, Aleksandr A; Yakubovich, S D

2011-01-01

We have studied superluminescent diodes (SLDs) and semiconductor optical amplifiers (SOAs) based on an (Al x Ga 1-x )As/GaAs single quantum well structure with an Al content x ∼ 0.1 in a 10-nm-thick active layer. Depending on the length of the active channel, the single-mode fibre coupled cw output power of the SLDs is 1 to 30 mW at a spectral width of about 50 nm. The width of the optical gain band in the active channel exceeds 40 nm. Preliminary operating life tests have demonstrated that the devices are sufficiently reliable. (lasers)

Research and development of an ultra clean surface for RF cavities

International Nuclear Information System (INIS)

Miwa, Hajime; Ikeda, Tokumi; Suzuki, Takafusa; Kurosawa, Kiyosi; Kako, Eiji; Noguchi, Shuichi; Saito, Kenji; Kneisel, P.

1993-01-01

Suppression of field emission is essentially important in order to attain higher accelerating gradients. Therefore, elimination of residual dust particles on the inner surface of RF cavities is necessary. Surface of a niobium cavity was simulated in silicon wafers, and analysis of dust particles was performed by a particle counter used for semiconductor industries. Experimental results in various surface treatments and applications to niobium cavities are described in this paper. (author)

Absorption properties of metal-semiconductor hybrid nanoparticles.

Science.gov (United States)

Shaviv, Ehud; Schubert, Olaf; Alves-Santos, Marcelo; Goldoni, Guido; Di Felice, Rosa; Vallée, Fabrice; Del Fatti, Natalia; Banin, Uri; Sönnichsen, Carsten

2011-06-28

The optical response of hybrid metal-semiconductor nanoparticles exhibits different behaviors due to the proximity between the disparate materials. For some hybrid systems, such as CdS-Au matchstick-shaped hybrids, the particles essentially retain the optical properties of their original components, with minor changes. Other systems, such as CdSe-Au dumbbell-shaped nanoparticles, exhibit significant change in the optical properties due to strong coupling between the two materials. Here, we study the absorption of these hybrids by comparing experimental results with simulations using the discrete dipole approximation method (DDA) employing dielectric functions of the bare components as inputs. For CdS-Au nanoparticles, the DDA simulation provides insights on the gold tip shape and its interface with the semiconductor, information that is difficult to acquire by experimental means alone. Furthermore, the qualitative agreement between DDA simulations and experimental data for CdS-Au implies that most effects influencing the absorption of this hybrid system are well described by local dielectric functions obtained separately for bare gold and CdS nanoparticles. For dumbbell shaped CdSe-Au, we find a shortcoming of the electrodynamic model, as it does not predict the "washing out" of the optical features of the semiconductor and the metal observed experimentally. The difference between experiment and theory is ascribed to strong interaction of the metal and semiconductor excitations, which spectrally overlap in the CdSe case. The present study exemplifies the employment of theoretical approaches used to describe the optical properties of semiconductors and metal nanoparticles, to achieve better understanding of the behavior of metal-semiconductor hybrid nanoparticles.

Enhanced photoelastic modulation in silica phononic crystal cavities

Science.gov (United States)

Kim, Ingi; Iwamoto, Satoshi; Arakawa, Yasuhiko

2018-04-01

The enhanced photoelastic modulation in quasi-one-dimensional (1D) phononic crystal (PnC) cavities made of fused silica is experimentally demonstrated. A confined acoustic wave in the cavity can induce a large birefringence through the photoelastic effect and enable larger optical modulation amplitude at the same acoustic power. We observe a phase retardation of ∼26 mrad of light passing through the cavity when the exciting acoustic frequency is tuned to the cavity mode resonance of ∼500 kHz at 2.5 V. In the present experiment, a 16-fold enhancement of retardation in the PnC cavity is demonstrated compared with that in a bar-shaped silica structure. Spatially resolved optical retardation measurement reveals that the large retardation is realized only around the cavity reflecting the localized nature of the acoustic cavity mode. The enhanced interactions between acoustic waves and light can be utilized to improve the performance of acousto-optic devices such as photoelastic modulators.

Half-period optical pulse generation using a free-electron laser

International Nuclear Information System (INIS)

Jaroszynski, D.A.; Chaix, P.; Piovella, N.

1995-01-01

Recently there has been growth, in interest in non-equilibrium interaction of half-period long optical pulses with matter. To date the optical pulses have been produced by chopping out a half-period long segment from a longer pulse using a semiconductor switch driven by a femtosecond laser. In this paper we present new methods for producing tunable ultra-short optical pulses as short as half an optical period using a free-electron laser driven by electron bunches with a duration a fraction of an optical period. Two different methods relying on the production of coherent spontaneous emission will be described. In the first method we show that when a train of ultra-short optical pulses as short as one half period. We present calculations which show that the small signal gain is unimportant in the early stages of radiation build up in the cavity when the startup process is dominated by coherent spontaneous emission. To support our proposed method we present encouraging experimental results from the FELIX experiment in the Netherlands which show that interference effects between the coherent spontaneous optical pulses at start-up are very important. The second proposed method relies on the fact that coherent spontaneous emission mimics the undulations of electrons as they pass through the undulator. We show that ultra-short optical pulses are produced by coherent spontaneous emission when ultra-short electron bunches pass through an ultra-short undulator. We discuss the interesting case of such undulator radiation in the presence of an optical cavity and show that the optical pulse can be open-quotes tayloredclose quotes by simply adjusting the optical cavity desynchronism. The proposed methods may be realisable using existing rf driven FELs in the far-infrared

Q-switched operation with Fox-Smith-Michelson laser cavity

International Nuclear Information System (INIS)

Huang, X; Huang, L; Gong, M

2008-01-01

A new kind of three-mirror composite cavity, Fox-Smith-Michelson cavity has been configured. This laser cavity is capable of high power output, owing to the low threshold of Michelson cavity. Also, thanks to the mode selection function of Fox-Smith cavity, stable pulses at high repetition rate can be generated. In our experiment, 15.54 W CW output at 1064 nm has been achieved, with an optic-to-optic conversion efficiency of 42.2%. At the Q-switching repetition rate of 100 kHz, the average output power is 11.92 W, with an optic-to-optic conversion efficiency of 38.2%. For Q-switching frequency from 30 kHz to 100 kHz, the pulse width variation is below 4.4% and the amplitude variation is below 4.8%

Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

Science.gov (United States)

Lau, Wayne Heung

This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

The measurement of the optical cavity length for the infrared free electron laser

International Nuclear Information System (INIS)

Curtis, C.J.; Dahlberg, J.C.; Oren, W.A.; Tremblay, K.J.

1999-01-01

One of the final tasks involved in the alignment of the newly constructed Free Electron Laser at the Thomas Jefferson National Accelerator Facility was to accurately measure the length between two mirrors which make up the optical cavity. This presentation examines the survey techniques and equipment assembled in order to complete these measurements, together with the possible sources of error, and the accuracy achieved. (authors)

An ultra-wideband tunable multi-wavelength Brillouin fibre laser based on a semiconductor optical amplifier and dispersion compensating fibre in a linear cavity configuration

International Nuclear Information System (INIS)

Zulkifli, M Z; Ahmad, H; Hassan, N A; Jemangin, M H; Harun, S W

2011-01-01

A multi-wavelength Brillouin fibre laser (MBFL) with an ultra-wideband tuning range from 1420 nm to 1620 nm is demonstrated. The MBFL uses an ultra-wideband semiconductor optical amplifier (SOA) and a dispersion compensating fibre (DCF) as the linear gain medium and nonlinear gain medium, respectively. The proposed MBFL has a wide tuning range covering the short (S-), conventional (C-) and long (L-) bands with a wavelength spacing of 0.08 nm, making it highly suitable for DWDM system applications. The output power of the observed Brillouin Stokes ranges approximately from -5.94 dBm to -0.41 dBm for the S-band, from -4.34 dBm to 0.02 dBm for the C-band and from -2.19 dBm to 0.39 dBm for the L-band. The spacing between each adjacent wavelengths of all the three bands is about 0.08 nm, which is approximately 10.7 GHz for the frequency domain. (lasers)

Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

International Nuclear Information System (INIS)

Chang-Hwan Kim

2003-01-01

Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms

Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

Energy Technology Data Exchange (ETDEWEB)

Kim, Chang-Hwan [Iowa State Univ., Ames, IA (United States)

2003-01-01

Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

Phase-dependent optical bistability and multistability in a semiconductor quantum well system

International Nuclear Information System (INIS)

Wang Zhiping; Fan Hongyi

2010-01-01

We theoretically investigate the hybrid absorptive-dispersive optical bistability and multistability in a four-level inverted-Y quantum well system inside a unidirectional ring cavity. We find that the coupling field, the pumping field as well as the cycling field can affect the optical bistability and multistability dramatically, which can be used to manipulate efficiently the threshold intensity and the hysteresis loop. The effects of the relative phase and the electronic cooperation parameter on the OB and OM are also studied. Our study is much more practical than its atomic counterpart due to its flexible design and the wide adjustable parameters. Thus, it may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science.

Observation of Fano-Type Interference in a Coupled Cavity-Atom System

International Nuclear Information System (INIS)

Cheng Yong; Tan Zheng; Wang Jin; Zhan Ming-Sheng; Zhu Yi-Fu

2016-01-01

We present the experimental observation of the Fano-type interference in a coupled cavity-atom system by confining the laser-cooled "8"5Rb atoms in an optical cavity. The asymmetric Fano profile is obtained through quantum interference in a three-level atomic system coherently coupled to a single mode cavity field. The observed Fano profile can be explained by the interference between the intra-cavity dark state and the polariton state of the coupled cavity-atom system. The possible applications of our observations include all-optical switching, optical sensing and narrow band optical filters. (paper)

Time-resolved optically-detected magnetic resonance of II-VI diluted-magnetic-semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Ivanov, V.Yu.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Godlewski, M. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Dept. Mathem. and Natural Sci. College of Sci., Card. S. Wyszynski Univ., Warsaw (Poland); Yakovlev, D.R. [Experimental Physics 2, University of Dortmund, 44221 Dortmund (Germany); A. F. Ioffe Physico-Technical Institute, 194017 St. Petersburg (Russian Federation); Ryabchenko, S.M. [Institute of Physics NAS Ukraine, 03028 Kiev (Ukraine); Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, 38106 Braunschweig (Germany)

2007-01-15

Time-resolved optically-detected magnetic resonance (ODMR) technique was used to study spin dynamics of Mn{sup 2+} ions in (Zn,Mn)Se- and (Cd,Mn)Te-based diluted magnetic semiconductor quantum wells. Times of spin-lattice relaxation have been measured directly from a dynamical shift of exciton luminescence lines after a pulsed impact of 60 GHz microwave radiation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Laser of optical fiber composed by two coupled cavities: application as optical fiber sensor; Laser de fibra optica compuesto por dos cavidades acopladas: aplicacion como sensor de fibra optica

Energy Technology Data Exchange (ETDEWEB)

Vazquez S, R.A.; Kuzin, E.A.; Ibarra E, B. [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), A.P. 51 y 216, 72000 Puebla (Mexico); May A, M. [Universidad Autonoma del Carmen (UNACAR) Av. 56 No. 4 por Av. Concordia, Campeche (Mexico); Shlyagin, M.; Marquez B, I. [Centro de Investigacion Cientifica y de Ensenanza Superior de Ensenada (CICESE), 22860 Ensenada, Baja California (Mexico)]. e-mail: ravsa100@hotmail.com

2004-07-01

We show an optical fiber laser sensor which consist of two cavities coupled and three fiber Bragg gratings. We used one Bragg grating (called reference) and two Bragg gratings (called sensors), which have the lower reflection wavelength. The reference grating with the two sensors grating make two cavities: first one is the internal cavity which has 4230 m of length and the another one is the external cavity which has 4277 m of length. Measuring the laser beating frequency for a resonance cavity and moving the frequency peaks when the another cavity is put in resonance, we prove that the arrangement can be used as a two points sensor for determining the difference of temperature or stress between these two points. (Author)

Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

Science.gov (United States)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-03-01

Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

Phonon Routing in Integrated Optomechanical Cavity-waveguide Systems

Science.gov (United States)

2015-08-20

cavity (bottom beam of Fig. 1b), allowing for evanescent cou- pling of laser light into and out of the cavity. A single optical fiber taper is used to...couple light into the on- chip coupling waveguide, and a photonic crystal mirror is etched in to the end of the optical coupling waveguide so that light...coupled into the nanobeam cavity can be recollected by the optical fiber taper as per Ref. [36]. Figure 1c shows the band structure of the phonon

Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser

International Nuclear Information System (INIS)

Vasil'ev, Petr P; Kan, H; Ohta, H; Hiruma, T; Tanaka, K A

2006-01-01

A theoretical model of the optical gain in asymmetric GaAs/AlGaAs quantum-well lasers is developed. It is demonstrated that the emission spectrum of asymmetric GaAs/AlGaAs quantum-well lasers is much broader than that of standard quantum-well lasers. The experimental samples of such lasers and superluminescent diodes with the emission bandwidth exceeding 50 nm are fabricated. Wavelength tunable ultrashort pulses with duration of 1-2 ps at repetition rates of 0.4-1 GHz are obtained by active mode locking of an external cavity laser. (lasers)

Spin physics in semiconductors

CERN Document Server

Dyakonov, Mikhail I

2008-01-01

This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

Modeling of Semiconductor Optical Amplifier Gain Characteristics for Amplification and Switching

Science.gov (United States)

Mahad, Farah Diana; Sahmah, Abu; Supa'at, M.; Idrus, Sevia Mahdaliza; Forsyth, David

2011-05-01

The Semiconductor Optical Amplifier (SOA) is presently commonly used as a booster or pre-amplifier in some communication networks. However, SOAs are also a strong candidate for utilization as multi-functional elements in future all-optical switching, regeneration and also wavelength conversion schemes. With this in mind, the purpose of this paper is to simulate the performance of the SOA for improved amplification and switching functions. The SOA is modeled and simulated using OptSim software. In order to verify the simulated results, a MATLAB mathematical model is also used to aid the design of the SOA. Using the model, the gain difference between simulated and mathematical results in the unsaturated region is <1dB. The mathematical analysis is in good agreement with the simulation result, with only a small offset due to inherent software limitations in matching the gain dynamics of the SOA.

Low-frequency fluctuation in multimode semiconductor laser subject to optical feedback

Institute of Scientific and Technical Information of China (English)

Xu Zhang; Huiying Ye; Zhaoxin Song

2008-01-01

Dynamics of a semiconductor laser subject to moderate optical feedback operating in the low-frequency fluctuation regime is numerically investigated.Multimode Lang-Kobayashi(LK)equations show that the low-frequency intensity dropout including the total intensity and sub-modes intensity is accompanied by sudden dropout simultaneously,which is in good agreement with experimental observation.The power fluctuation is quite annoying in practical applications,therefore it becomes important to study the mechanism of power fluctuation.It is also shown that many factors,such as spontaneous emission noise and feedback parameter,may influence power fluctuation larger than previously expected.

Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm Invited Paper

Institute of Scientific and Technical Information of China (English)

D. Bimberg; C. Meuer; M. L(a)mmlin; S. Liebich; J. Kim; A. Kovsh; I. Krestnikov; G. Eisenstein

2008-01-01

@@ The dynamics of nonlinear processes in quantum dot (QD) semiconductor optical amplifiers (SOAs) are investigated. Using small-signal measurements, the suitabilities of cross-gain and cross-phase modulation as well as four wave mixing (FWM) for wavelength conversion are examined. The cross-gain modulation is found to be suitable for wavelength conversion up to a frequency of 40 GHz.

Advanced materials for the optical delay line of frequency pulse modulator on the basis of semiconductor laser

International Nuclear Information System (INIS)

Abrarov, S.M.

1999-01-01

In the paper some materials which can be sued as an optical delay line of the pulse frequency modulator are considered. The structure and the principle are described as a modulator consisting of a laser diode with two Fabry Perot resonators and an optical wave guide providing a feedback loop. The optical wave guide fulfills the function of delay line and links the two resonators. The pulse sequence of the radiation of the semiconductor laser arises due to failure and recovery of optical generation. The pulse frequency modulation can be carried out by the action of electrical tension field on the electro optic martial of the wave guide. The selection of three electro-optic crystals for making of the optical wave guide of the considered modulator is justified. (author)

Quantum-coherent coupling of a mechanical oscillator to an optical cavity mode.

Science.gov (United States)

Verhagen, E; Deléglise, S; Weis, S; Schliesser, A; Kippenberg, T J

2012-02-01

Optical laser fields have been widely used to achieve quantum control over the motional and internal degrees of freedom of atoms and ions, molecules and atomic gases. A route to controlling the quantum states of macroscopic mechanical oscillators in a similar fashion is to exploit the parametric coupling between optical and mechanical degrees of freedom through radiation pressure in suitably engineered optical cavities. If the optomechanical coupling is 'quantum coherent'--that is, if the coherent coupling rate exceeds both the optical and the mechanical decoherence rate--quantum states are transferred from the optical field to the mechanical oscillator and vice versa. This transfer allows control of the mechanical oscillator state using the wide range of available quantum optical techniques. So far, however, quantum-coherent coupling of micromechanical oscillators has only been achieved using microwave fields at millikelvin temperatures. Optical experiments have not attained this regime owing to the large mechanical decoherence rates and the difficulty of overcoming optical dissipation. Here we achieve quantum-coherent coupling between optical photons and a micromechanical oscillator. Simultaneously, coupling to the cold photon bath cools the mechanical oscillator to an average occupancy of 1.7 ± 0.1 motional quanta. Excitation with weak classical light pulses reveals the exchange of energy between the optical light field and the micromechanical oscillator in the time domain at the level of less than one quantum on average. This optomechanical system establishes an efficient quantum interface between mechanical oscillators and optical photons, which can provide decoherence-free transport of quantum states through optical fibres. Our results offer a route towards the use of mechanical oscillators as quantum transducers or in microwave-to-optical quantum links.

Optical and Electrical Characterization of InGaAsN used for 1.3 µm lasers

OpenAIRE

Dumitras, Gheorghe

2007-01-01

This work represents a study of the quaternary semiconductor alloy InGaAsN, which is used in quantum-well lasers. The optical part deals with absorption as well as normal and time-resolved photoluminescence. The results of this part are used for the optimization of InGaAsN growth by molecular beam epitaxy for state-of-the-art 1.3 µm Vertical Cavity Surface Emitting Lasers (VCSEL). The influence of the thermal annealing on the optical properties of InGaAsN quantum-wells is examined. By means o...

Negative-Mass Instability of the Spin and Motion of an Atomic Gas Driven by Optical Cavity Backaction

Science.gov (United States)

Kohler, Jonathan; Gerber, Justin A.; Dowd, Emma; Stamper-Kurn, Dan M.

2018-01-01

We realize a spin-orbit interaction between the collective spin precession and center-of-mass motion of a trapped ultracold atomic gas, mediated by spin- and position-dependent dispersive coupling to a driven optical cavity. The collective spin, precessing near its highest-energy state in an applied magnetic field, can be approximated as a negative-mass harmonic oscillator. When the Larmor precession and mechanical motion are nearly resonant, cavity mediated coupling leads to a negative-mass instability, driving exponential growth of a correlated mode of the hybrid system. We observe this growth imprinted on modulations of the cavity field and estimate the full covariance of the resulting two-mode state by observing its transient decay during subsequent free evolution.

Nonlinear dynamic behaviors of an optically injected vertical-cavity surface-emitting laser

International Nuclear Information System (INIS)

Li Xiaofeng; Pan Wei; Luo Bin; Ma Dong; Wang Yong; Li Nuohan

2006-01-01

Nonlinear dynamics of a vertical-cavity surface-emitting laser (VCSEL) with external optical injection are studied numerically. We consider a master-slave configuration where the dynamic characteristics of the slave are affected by the optical injection from the master, and we also establish the corresponding Simulink model. The period-doubling route as well as the period-halving route is observed, where the regular, double-periodic, and chaotic pulsings are found. By adjusting the injection strength properly, the laser can be controlled to work at a given state. The effects of frequency detuning on the nonlinear behaviors are also investigated in terms of the bifurcation diagrams of photon density with the frequency detuning. For weak injection case, the nonlinear dynamics shown by the laser are quite different when the value of frequency detuning varies contrarily (positive and negative direction). If the optical injection is strong enough, the slave can be locked by the master even though the frequency detuning is relatively large

Defects in semiconductors

International Nuclear Information System (INIS)

Pimentel, C.A.F.

1983-01-01

Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays