WorldWideScience

Sample records for semiconductor multilayer structure

  1. On properties of multilayer semiconductor nZnSe-nGaAs structures

    CERN Document Server

    Duysenbaev, M; Auezov, S A

    2002-01-01

    Electrical and optoelectronic properties of multilayer semiconductor nZnSe-nGaAs structures have been investigated. The volt-current characteristics showed that the relation I approx V holds at the voltages lower than 0.8 v, then the current decreases with increasing the applied voltage. The spectral sensitive range (0.47-1.7 mu m) and parameters of the structures have been determined. Negative differential conductivity mechanism is discussed. (author)

  2. Positron annihilation spectroscopy: Applications to Si, ZnO, and multilayer semiconductor structures

    Science.gov (United States)

    Schaffer, J. P.; Rohatgi, A.; Dewald, A. B.; Frost, R. L.; Pang, S. K.

    1989-11-01

    The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors is demonstrated for Si, ZnO, and multilayer structures, such as an AlGaAs/GaAs solar cell. The types of defects discussed include: i) vacancy complexes, oxygen impurities and dopants, ii) the influence of cooling rates on spatial non-uniformities in defects, and iii) characterization of buried interfaces. In sev-eral instances, the results of the PAS investigations are correlated with data from other established semiconductor characterization techniques.

  3. Transverse Seebeck and Peltier effect in tilted metal-semiconductor multilayer structures

    International Nuclear Information System (INIS)

    Reitmaier, Christina

    2012-01-01

    Whether in aerospace, automobile industry or in home appliances, thermoelectric effects find use in many areas of technology. This work deals with the investigation of a special form of these effects, the transversal Seebeck- and Peltier effect. Via modelling under variation of the sample parameters the cooling efficiencies, the attainable temperature differences and the Figures of merit are optimised and than suitable samples are produced according to these specifications. With these tilted metal semiconductor multilayer structures consisting of lead and bismuth telluride a transversal Peltier effect is observed. Moreover, the generation of electric power is examined via the transversal Seebeck effect. In tilted Pb-Bi2Te3 multilayers the efficiency is measured with the conversion by heat in electric power and is compared to model calculations. (orig.)

  4. Magnetic multilayer structure

    Science.gov (United States)

    Herget, Philipp; O'Sullivan, Eugene J.; Romankiw, Lubomyr T.; Wang, Naigang; Webb, Bucknell C.

    2016-07-05

    A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

  5. Capacitive electrolyte-insulator-semiconductor structures functionalised with a polyelectrolyte/enzyme multilayer: New strategy for enhanced field-effect biosensing

    Energy Technology Data Exchange (ETDEWEB)

    Abouzar, Maryam H.; Poghossian, Arshak; Schoening, Michael J. [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany); Siqueira, Jose R. Jr.; Oliveira, Osvaldo N. Jr. [Physics Institute of Sao Carlos, University of Sao Paulo, Sao Carlos (Brazil); Moritz, Werner [Institute of Chemistry, Humboldt University Berlin (Germany)

    2010-04-15

    A novel strategy for enhanced field-effect biosensing using capacitive electrolyte-insulator-semiconductor (EIS) structures functionalised with pH-responsive weak polyelectrolyte/enzyme or dendrimer/enzyme multilayers is presented. The feasibility of the proposed approach is exemplarily demonstrated by realising a penicillin biosensor based on a capacitive p-Si-SiO{sub 2} EIS structure functionalised with a poly(allylamine hydrochloride) (PAH)/penicillinase and a poly(amidoamine) dendrimer/penicillinase multilayer. The developed sensors response to changes in both the local pH value near the gate surface and the charge of macromolecules induced via enzymatic reaction, resulting in a higher sensitivity. For comparison, an EIS penicillin biosensor with adsorptively immobilised penicillinase has been also studied. The highest penicillin sensitivity of 100 mV/dec has been observed for the EIS sensor functionalised with the PAH/penicillinase multilayer. The lower and upper detection limit was around 20 {mu}M and 10 mM, respectively. In addition, an incorporation of enzymes in a multilayer prepared by layer-by-layer technique provides a larger amount of immobilised enzymes per sensor area, reduces enzyme leaching effects and thus, enhances the biosensor lifetime (the loss of penicillin sensitivity after 2 months was 10-12%). (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  6. Transverse Seebeck and Peltier effect in tilted metal-semiconductor multilayer structures; Transversaler Seebeck- und Peltier-Effekt in verkippten Metall-Halbleiter-Multilagenstrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Reitmaier, Christina

    2012-07-01

    Whether in aerospace, automobile industry or in home appliances, thermoelectric effects find use in many areas of technology. This work deals with the investigation of a special form of these effects, the transversal Seebeck- and Peltier effect. Via modelling under variation of the sample parameters the cooling efficiencies, the attainable temperature differences and the Figures of merit are optimised and than suitable samples are produced according to these specifications. With these tilted metal semiconductor multilayer structures consisting of lead and bismuth telluride a transversal Peltier effect is observed. Moreover, the generation of electric power is examined via the transversal Seebeck effect. In tilted Pb-Bi2Te3 multilayers the efficiency is measured with the conversion by heat in electric power and is compared to model calculations. (orig.)

  7. A Designed Room Temperature Multilayered Magnetic Semiconductor

    Science.gov (United States)

    Bouma, Dinah Simone; Charilaou, Michalis; Bordel, Catherine; Duchin, Ryan; Barriga, Alexander; Farmer, Adam; Hellman, Frances; Materials Science Division, Lawrence Berkeley National Lab Team

    2015-03-01

    A room temperature magnetic semiconductor has been designed and fabricated by using an epitaxial antiferromagnet (NiO) grown in the (111) orientation, which gives surface uncompensated magnetism for an odd number of planes, layered with the lightly doped semiconductor Al-doped ZnO (AZO). Magnetization and Hall effect measurements of multilayers of NiO and AZO are presented for varying thickness of each. The magnetic properties vary as a function of the number of Ni planes in each NiO layer; an odd number of Ni planes yields on each NiO layer an uncompensated moment which is RKKY-coupled to the moments on adjacent NiO layers via the carriers in the AZO. This RKKY coupling oscillates with the AZO layer thickness, and it disappears entirely in samples where the AZO is replaced with undoped ZnO. The anomalous Hall effect data indicate that the carriers in the AZO are spin-polarized according to the direction of the applied field at both low temperature and room temperature. NiO/AZO multilayers are therefore a promising candidate for spintronic applications demanding a room-temperature semiconductor.

  8. Process of obtaining the multilayer structure

    International Nuclear Information System (INIS)

    Buzdugan, A.; Dolghieru, V.; Jitari, V.; Colomeico, E.; Popescu, A.

    1997-01-01

    The invention relates to the multilayer structures of glassy semiconductors with the refractive index abrupt and smooth variation at the bound between the layers and may be used for manufacturing the optical information transmission and recording media. With a view to simplify the technology, compositionally different layers of chalcogenide glassy semiconductors having various refractive indexes from As 2 S 3 , are being by thermal vacuum evaporation, changing the vaporization temperature thereof from 120 to 280 C

  9. Electrons and Phonons in Semiconductor Multilayers

    Science.gov (United States)

    Ridley, B. K.

    1996-11-01

    This book provides a detailed description of the quantum confinement of electrons and phonons in semiconductor wells, superlattices and quantum wires, and shows how this affects their mutual interactions. It discusses the transition from microscopic to continuum models, emphasizing the use of quasi-continuum theory to describe the confinement of optical phonons and electrons. The hybridization of optical phonons and their interactions with electrons are treated, as are other electron scattering mechanisms. The book concludes with an account of the electron distribution function in three-, two- and one-dimensional systems, in the presence of electrical or optical excitation. This text will be of great use to graduate students and researchers investigating low-dimensional semiconductor structures, as well as to those developing new devices based on these systems.

  10. Periodic multilayer magnetized cold plasma containing a doped semiconductor

    Science.gov (United States)

    Nayak, Chittaranjan; Saha, Ardhendu; Aghajamali, Alireza

    2018-02-01

    The present work is to numerically investigate the properties of the defect mode in a one-dimensional photonic crystal made of magnetized cold plasma, doped by semiconductor. The defect mode of such kind of multilayer structure is analyzed by applying the character matrix method to each individual layer. Numerical results illustrate that the defect mode frequency can be tuned by varying the external magnetic field, the electron density, and the thickness of the defect layer. Moreover, the behavior of the defect mode was found to be quite interesting when study the oblique incidence. It was found that for both right- and left-hand polarized transversal magnetic waves, the defect mode of the proposed defective structure disappears when the angle of incidence is larger than a particular oblique incidence. For the left-hand polarized transversal electric wave, however, an additional defect mode was noticed. The results lead to some new information concerning the designing of new types of tunable narrowband microwave filters.

  11. Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

    Science.gov (United States)

    Gurov, Yu. B.; Lapushkin, S. V.; Sandukovsky, V. G.; Chernyshev, B. A.

    2018-03-01

    The current state of studies in the field of development of multilayer semiconductor systems (semiconductor detector (SCD) telescopes), which allow the energy to be precisely measured within a large dynamic range (from a few to a few hundred MeV) and the particles to be identified in a wide mass range (from pions to multiply charged nuclear fragments), is presented. The techniques for manufacturing the SCD telescopes from silicon and high-purity germanium are described. The issues of measuring characteristics of the constructed detectors and their impact on the energy resolution of the SCD telescopes and on the quality of the experimental data are considered. Much attention is given to the use of the constructed semiconductor devices in experimental studies at accelerators of PNPI (Gatchina), LANL (Los Alamos) and CELSIUS (Uppsala).

  12. Transfer matrices for multilayer structures

    International Nuclear Information System (INIS)

    Baquero, R.

    1988-08-01

    We consider four of the transfer matrices defined to deal with multilayer structures. We deduce algorithms to calculate them numerically, in a simple and neat way. We illustrate their application to semi-infinite systems using SGFM formulae. These algorithms are of fast convergence and allow a calculation of bulk-, surface- and inner-layers band structure in good agreement with much more sophisticated calculations. Supermatrices, interfaces and multilayer structures can be calculated in this way with a small computational effort. (author). 10 refs

  13. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  14. Subwavelength resolution from multilayered structure (Conference Presentation)

    Science.gov (United States)

    Cheng, Bo Han; Jen, Yi-Jun; Liu, Wei-Chih; Lin, Shan-wen; Lan, Yung-Chiang; Tsai, Din Ping

    2016-10-01

    Breaking optical diffraction limit is one of the most important issues needed to be overcome for the demand of high-density optoelectronic components. Here, a multilayered structure which consists of alternating semiconductor and dielectric layers for breaking optical diffraction limitation at THz frequency region are proposed and analyzed. We numerically demonstrate that such multilayered structure not only can act as a hyperbolic metamaterial but also a birefringence material via the control of the external temperature (or magnetic field). A practical approach is provided to control all the diffraction signals toward a specific direction by using transfer matrix method and effective medium theory. Numerical calculations and computer simulation (based on finite element method, FEM) are carried out, which agree well with each other. The temperature (or magnetic field) parameter can be tuned to create an effective material with nearly flat isofrequency feature to transfer (project) all the k-space signals excited from the object to be resolved to the image plane. Furthermore, this multilayered structure can resolve subwavelength structures at various incident THz light sources simultaneously. In addition, the resolution power for a fixed operating frequency also can be tuned by only changing the magnitude of external magnetic field. Such a device provides a practical route for multi-functional material, photolithography and real-time super-resolution image.

  15. Anomalously Weak Scattering in Metal-Semiconductor Multilayer Hyperbolic Metamaterials

    Directory of Open Access Journals (Sweden)

    Hao Shen

    2015-05-01

    Full Text Available In contrast to strong plasmonic scattering from metal particles or structures in metal films, we show that patterns of arbitrary shape fabricated out of multilayer hyperbolic metamaterials become invisible within a chosen band of optical frequencies. This is due to anomalously weak scattering when the in-plane permittivity of the multilayer hyperbolic metamaterials is tuned to match with the surrounding medium. This new phenomenon is described theoretically and demonstrated experimentally by optical characterization of various patterns in Au-Si multilayer hyperbolic metamaterials. This anomalously weak scattering is insensitive to pattern sizes, shapes, and incident angles, and has potential applications in scattering cross-section engineering, optical encryption, low-observable conductive probes, and optoelectric devices.

  16. Magneto-optical transitions in multilayer semiconductor nanocrystals

    CERN Document Server

    Climente, J; Jaskolski, W; Aliaga, J I

    2003-01-01

    Absorption spectra of chemically synthesized uniform and multilayer semiconductor nanocrystals in a magnetic field are investigated theoretically. The nanocrystals are modelled by spherical barrier/well potentials. The electron states are calculated within the effective mass model. A four-band k centre dot p Hamiltonian, accounting for the valence subband mixing, is used to obtain the hole states. The magneto-optical transition spectrum depends strongly on the size and composition of the nanocrystals. In the case of small uniform quantum dots, only the linear Zeeman splitting of the electron and hole energy levels is observed even for very strong magnetic fields. In larger nanocrystals, the quadratic magnetic interaction turns out to be important and the transition spectrum becomes complicated. The most complicated influence of the magnetic field is found in quantum dot-quantum well systems in which the lowest electron and hole states are localized in a thin spherical layer. It is shown that transitions that ...

  17. Plasmon response of a metal-semiconductor multilayer 4π-spiral as a negative-index metamaterial

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadivand, Arash, E-mail: aahma011@fiu.edu; Pala, Nezih [Florida International University, Department of Electrical and Computer Engineering (United States)

    2014-12-15

    In this study, we investigate the optical response and plasmonic features of a multilayer 4π-spiral composed of metal-semiconductor arms, numerically, by employing a finite-difference time-domain method. We verified that the proposed structure is able to support strong plasmon and Fano resonances in the circular arms. We showed that the negative polarizability of the spiral provides an opportunity to consider the examined 4π-spiral structure as a meta-atom. Quantifying the effective refractive index of the structure for the presence of various semiconductor substances such as Si, GaP, and InP, we obtained the highest possible value for the associated figure of merit (FOM). Ultimately, for a finite spiral structure with a compositional and multilayer arrangement of Au and GaP arms, the FOM is determined as approximately ∼62.3.

  18. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  19. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  20. Charge equilibration and potential steps in organic semiconductor multilayers

    NARCIS (Netherlands)

    Brocks, G.; Cakir, Deniz; Bokdam, Menno; de Jong, Machiel Pieter; Fahlman, M.

    2012-01-01

    Substantial potential steps ∼0.5 eV are frequently observed in organic multilayers of donor and acceptor molecules. Often such potential steps depend on the order in which the individual layers are deposited, or on which substrate they are deposited. In this paper we outline a model for these

  1. Pion minus energy measurement by a multilayer semiconductor spectrometer

    International Nuclear Information System (INIS)

    Gornov, M.G.; Gurov, Yu.B.; Lapushkin, S.V.

    1981-01-01

    A technique for determining π - meson energy by a laminated semiconductor spectrometer is described. Results of experimental test of the technique carried out using beams of meson track of the JINR synchrocyclotron and three Si(Li) detectors are given. A specific feature of the technique is that chi 2 criterium with a functional written through exact thicknesses of semiconductor detectors was used for separating events with disturbance of ionization dependence and determining particle energy. It is shown that the absolute resolution can be not worse than 0.5 MeV in a wide energy range. It is concluded that the technique suggested is suitable for measuring energy of any charged particles with indefinite energy release during stoppage [ru

  2. Optical and structural study of BST multilayers

    Czech Academy of Sciences Publication Activity Database

    Železný, Vladimír; Chvostová, Dagmar; Pajasová, Libuše; Jelínek, Miroslav; Kocourek, Tomáš; Daniš, S.; Valvoda, V.

    2010-01-01

    Roč. 12, č. 3 (2010), 538-541 ISSN 1454-4164 R&D Projects: GA ČR GA202/07/0591 Institutional research plan: CEZ:AV0Z10100522; CEZ:AV0Z10100520 Keywords : ellipsometry * structure * ferroelectric multilayers Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.412, year: 2010

  3. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  4. Semiconductor/metal nanocomposites formed by in situ reduction method in multilayer thin films

    International Nuclear Information System (INIS)

    Song Yanli; Wang Enbo; Tian Chungui; Mao Baodong; Wang Chunlei

    2009-01-01

    A layer-by-layer adsorption and in situ reduction method was adopted for synthesizing semiconductor/metal nanocomposites in multilayer ultra-thin films. Alternate adsorption of ZnO nanoparticles modified with poly(ethyleneimine), hydrogentetrachloroaurate and poly(styrenesulfonate) sodium results in the formation of ZnO/AuCl 4 - -loaded multilayer films. In situ reduction of the incorporated metal ions by heating yields ZnO/Au nanocomposites in the films. UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy were used to characterize the components of the composite films. UV-vis spectra indicate regular growth of the films. The electrochemistry behavior of the multilayer films was studied in detail on indium tin oxide electrode. The combined results suggest that the layer-by-layer adsorption and subsequent reduction method used here provides an effective way to synthesize ZnO/Au nanocomposites in the polymer matrix

  5. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  6. Object–relational architecture of information support of the multi-circuit calculation multilayer semiconductor nanostructures

    Directory of Open Access Journals (Sweden)

    Karina K. Abgaryan

    2015-06-01

    Full Text Available The article examines the object–relational approach to the creation of a database designed to provide informational support to the multiscale computational scheme of multilayer semiconductor nanostructures. The MSNS computational scheme developed earlier by our group uses a hierarchic representation of computational data obtained by various computational modules. Each layer of MSNS is treated separately. In contrast to well-known materials databases which serve for storing and retrieving of information on existing structures and their properties the database described in this paper is the central unit of the MSNS computational scheme. The database provides data interchange between various computational units. In this paper we describe the modern approach to material database design. More specifically, a data storage relational model which applies to solving resource-intensive and different-scale problems is proposed. An object–relational scheduler architecture is used in our work. It provides for high-speed data exchange between various computational units of the MSNS computational scheme. We introduce a simple and user-friendly interface allowing criteria-based data retrieving as well as creation of input files for computational modules. These approaches can be applied in various branches of science, including the aviation and space industry, in particular in control systems of engineering (materials science data.

  7. Nanosecond Surface Microdischarges in Multilayer Structures

    Science.gov (United States)

    Dubinov, A. E.; Lyubimtseva, V. A.

    2018-05-01

    Multilayer structures in which nanosecond surface microdischarges are generated have been developed, fabricated, and investigated. In these structures, layers are made in the form of thin transparent films, and a plasma discharge channel is formed in thin spacings between the layers. Passage of the discharge channel from one layer into the neighboring layer is implemented via pre-fabricated microholes. Images of microdischarges were obtained which confirmed that their plasma channels are formed according to the route assigned by the holes. The route may follow a fairly complex scheme and have self-intersection points and portions in which the electrons are bound to move in opposition to the electric field. In studying the shape of channels in multilayer strictures, the authors have found a new physical effect which lies in the azimuthal self-orientation of the discharge channel as it passes from one microhole to another.

  8. Calculation of surface acoustic waves in a multilayered piezoelectric structure

    International Nuclear Information System (INIS)

    Zhang Zuwei; Wen Zhiyu; Hu Jing

    2013-01-01

    The propagation properties of the surface acoustic waves (SAWs) in a ZnO—SiO 2 —Si multilayered piezoelectric structure are calculated by using the recursive asymptotic method. The phase velocities and the electromechanical coupling coefficients for the Rayleigh wave and the Love wave in the different ZnO—SiO 2 —Si structures are calculated and analyzed. The Love mode wave is found to be predominantly generated since the c-axis of the ZnO film is generally perpendicular to the substrate. In order to prove the calculated results, a Love mode SAW device based on the ZnO—SiO 2 —Si multilayered structure is fabricated by micromachining, and its frequency responses are detected. The experimental results are found to be mainly consistent with the calculated ones, except for the slightly larger velocities induced by the residual stresses produced in the fabrication process of the films. The deviation of the experimental results from the calculated ones is reduced by thermal annealing. (semiconductor physics)

  9. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.

    2015-03-09

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

  10. Optimization of Perfect Absorbers with Multilayer Structures

    Science.gov (United States)

    Li Voti, Roberto

    2018-02-01

    We study wide-angle and broadband perfect absorbers with compact multilayer structures made of a sequence of ITO and TiN layers deposited onto a silver thick layer. An optimization procedure is introduced for searching the optimal thicknesses of the layers so as to design a perfect broadband absorber from 400 nm to 750 nm, for a wide range of angles of incidence from 0{°} to 50{°}, for both polarizations and with a low emissivity in the mid-infrared. We eventually compare the performances of several optimal structures that can be very promising for solar thermal energy harvesting and collectors.

  11. Electronic structure of filled tetrahedral semiconductors

    NARCIS (Netherlands)

    Wood, D.M.; Zunger, Alex; Groot, R. de

    1985-01-01

    We discuss the susceptibility of zinc-blende semiconductors to band-structure modification by insertion of small atoms at their tetrahedral interstitial states. GaP is found to become a direct-gap semiconductor with two He atoms present at its interstitial sites; Si does not. Analysis of the factors

  12. Release strategies for making transferable semiconductor structures, devices and device components

    Science.gov (United States)

    Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

    2014-11-25

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  13. Fabrication and Properties of Multilayer Structures

    Science.gov (United States)

    1983-09-01

    according to both the high x-ray count and a Read camera pattern which showed only the 111 8 SiC reflection in a tight ± 30 distribution about the substrate...structural rearrangement. X-ray analysis of the deposited films at the composition of Pd2 Si using a Read camera indicated strong texturing. The...Phys. 35, 547 (1964). 11. C.A. Neubauer and J.R. Randen, Proc. IEEE 52, 1234 (1964). 12. W.A. Tiller, "Fabrication and Properties of Multilayer

  14. Layer-by-layer modification of thin-film metal-semiconductor multilayers with ultrashort laser pulses

    Science.gov (United States)

    Romashevskiy, S. A.; Tsygankov, P. A.; Ashitkov, S. I.; Agranat, M. B.

    2018-05-01

    The surface modifications in a multilayer thin-film structure (50-nm alternating layers of Si and Al) induced by a single Gaussian-shaped femtosecond laser pulse (350 fs, 1028 nm) in the air are investigated by means of atomic-force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy (OM). Depending on the laser fluence, various modifications of nanometer-scale metal and semiconductor layers, including localized formation of silicon/aluminum nanofoams and layer-by-layer removal, are found. While the nanofoams with cell sizes in the range of tens to hundreds of nanometers are produced only in the two top layers, layer-by-layer removal is observed for the four top layers under single pulse irradiation. The 50-nm films of the multilayer structure are found to be separated at their interfaces, resulting in a selective removal of several top layers (up to 4) in the form of step-like (concentric) craters. The observed phenomenon is associated with a thermo-mechanical ablation mechanism that results in splitting off at film-film interface, where the adhesion force is less than the bulk strength of the used materials, revealing linear dependence of threshold fluences on the film thickness.

  15. Properties of multilayer nonuniform holographic structures

    International Nuclear Information System (INIS)

    Pen, E F; Rodionov, Mikhail Yu

    2010-01-01

    Experimental results and analysis of properties of multilayer nonuniform holographic structures formed in photopolymer materials are presented. The theoretical hypotheses is proved that the characteristics of angular selectivity for the considered structures have a set of local maxima, whose number and width are determined by the thicknesses of intermediate layers and deep holograms and that the envelope of the maxima coincides with the selectivity contour of a single holographic array. It is also experimentally shown that hologram nonuniformities substantially distort shapes of selectivity characteristics: they become asymmetric, the local maxima differ in size and the depths of local minima reduce. The modelling results are made similar to experimental data by appropriately choosing the nonuniformity parameters. (imaging and image processing. holography)

  16. Neutron diffraction studies of thin film multilayer structures

    International Nuclear Information System (INIS)

    Majkrzak, C.F.

    1985-01-01

    The application of neutron diffraction methods to the study of the microscopic chemical and magnetic structures of thin film multilayers is reviewed. Multilayer diffraction phenomena are described in general and in particular for the case in which one of the materials of a bilayer is ferromagnetic and the neutron beam polarized. Recent neutron diffraction measurements performed on some interesting multilayer systems are discussed. 70 refs., 5 figs

  17. Laminated multilayer sheet structure and its utilization

    International Nuclear Information System (INIS)

    Chiba, K.; Itoh, K.; Mitani, Y.; Sobajima, S.; Yonemura, U.

    1980-01-01

    A laminated multilayer sheet structure is described comprising (A) an opaque flexible sheet layer, and (B) a flexible layer laminated on the surface of layer (A) and composed of a transparent thermic ray reflecting layer (B 1 ) bonded to a transparent synthetic resin layer (B 2 ), said layer (B 1 ) being a transparent thermic ray reflecting layer composed of (I) a layer of a metal having a thickness of about 50 to about 600 A, said metal being selected from the group consisting of gold, silver, copper, aluminum and a mixture of alloy of at least two of said metals, and (II) a high refractive substance layer having a thickness of about 50 to about 600 A, of an oxide of titanium derived from a layer of an organic titanium compound of the formula Ti 1 O/sub m/R/sub n/, where R is alkyl of 1-20 carbon atoms, l=1-30, m=4+3(1-1), and n=4+2(1-1), and containing the organic residual moiety of the organic titanium compound, the amount of said organic residual moiety being 0.1 to 30% by weight based on the weight of the high refractive substance layer; or said layer (B 1 ) being a transparent semiconductive layer having a thickness of about 500 to about 5,000 a and being composed of a compound selected from the group consisting of indium oxide, tin oxide, cadmium oxide, antimony oxide, copper iodide, and a mixture of at least two of said compounds. A method is described for heat-insulating a room, which comprises applying to the surface of a floor, wall, ceiling or partition in the room a laminated multilayer sheet structure comprising (A) an opaque flexible sheet layer, and (B) a flexible layer laminated on the surface of layer (A) and composed of a transparent thermic ray reflecting layer (B 1 ) bonded to a transparent synthetic resin layer

  18. Acoustic transmittance of an aperiodic deterministic multilayer structure

    International Nuclear Information System (INIS)

    Madrigal-Melchor, J; Enciso-Muñoz, A; Contreras-Solorio, D A

    2013-01-01

    We study theoretically the acoustic transmission for a multilayer structure where the characteristic acoustic impedance follows the values generated by the self-similar sequence called the 1 s counting sequence . The transmission spectrum shows clearly self-similarity characteristics.

  19. Modeling Delamination of Interfacial Corner Cracks in Multilayered Structures

    DEFF Research Database (Denmark)

    Veluri, Badrinath (Badri); Jensen, Henrik Myhre

    2013-01-01

    Multilayered electronic components, typically of heterogeneous materials, delaminate under thermal and mechanical loading. A phenomenological model focused on modeling the shape of such interface cracks close to corners in layered interconnect structures for calculating the critical stress...

  20. Optical Properties of Multilayer CdSe/POLYMER Structures

    Science.gov (United States)

    Red'Ko, V. P.; Voitenkov, A. I.; Kovalenko, O. E.

    The effects of preparation condition, concentration and size of particles upon optical and photoelectrical characteristics of multilayer structures CdSe/polyethylene terephthalate obtained by electron-beam evaporation were investigated.

  1. Testing of modern semiconductor memory structures

    NARCIS (Netherlands)

    Gaydadjiev, G.N.

    2007-01-01

    In this thesis, we study the problem of faults in modern semiconductor memory structures and their tests. According to the 2005 ITRS, the systems on chip (SoCs) are moving from logic and memory balanced chips to more memory dominated devices in order to cope with the increasing application

  2. Magnetization study of interlayer exchange in semiconductor EuS-PbS ferromagnetic wedge multilayers

    International Nuclear Information System (INIS)

    Kowalczyk, L.; Osinniy, V.; Chernyshova, M.; Dziawa, P.; Boratynski, A.; Story, T.; Smits, C.J.P.; Swagten, H.J.M.; Sipatov, A.Yu.; Volobuev, V.V.

    2006-01-01

    Interlayer coupling was experimentally studied in semiconductor EuS-PbS ferromagnetic superlattice wedge structures grown on KCl (0 0 1) substrates with the wedges covering the semiconductor nonmagnetic PbS spacer layer thickness from 0.3 to 6 nm. Structural parameters of the wedges were examined by X-ray diffraction analysis of EuS-PbS superlattice period. Measurements of magnetic hysteresis loops of EuS-PbS structures were performed by both SQUID (for small terminal parts of the wedge) and MOKE (magneto-optical analysis along the wedge) magnetometry. A strong decrease of magnetic remanence and an increase of saturation field observed for EuS-PbS structures with the PbS spacer thickness decreasing below about 1.5 nm is discussed in terms of the influence of antiferromagnetic interlayer coupling

  3. Status and limitations of multilayer X-ray interference structures

    International Nuclear Information System (INIS)

    Kortright, J.B.

    1996-01-01

    Trends in the performance of x-ray multilayer interference structures with periods ranging from 9 to 130 (angstrom) are reviewed. Analysis of near-normal incidence reflectance data vs photon energy reveals that the effective interface with σ in a static Debye-Waller model, describing interdiffusion and roughness, decreases as the multilayer period decreases, and reaches a lower limit of roughly 2 (angstrom). Specular reflectance and diffuse scattering from uncoated and multilayer-coated substrates having different roughness suggest that this lower limit results largely from substrate roughness. The increase in interface width with period thus results from increasing roughness of interdiffusion as the layer thickness increases

  4. Semiconductor-based Multilayer Selective Solar Absorber for Unconcentrated Solar Thermal Energy Conversion.

    Science.gov (United States)

    Thomas, Nathan H; Chen, Zhen; Fan, Shanhui; Minnich, Austin J

    2017-07-13

    Solar thermal energy conversion has attracted substantial renewed interest due to its applications in industrial heating, air conditioning, and electricity generation. Achieving stagnation temperatures exceeding 200 °C, pertinent to these technologies, with unconcentrated sunlight requires spectrally selective absorbers with exceptionally low emissivity in the thermal wavelength range and high visible absorptivity for the solar spectrum. In this Communication, we report a semiconductor-based multilayer selective absorber that exploits the sharp drop in optical absorption at the bandgap energy to achieve a measured absorptance of 76% at solar wavelengths and a low emittance of approximately 5% at thermal wavelengths. In field tests, we obtain a peak temperature of 225 °C, comparable to that achieved with state-of-the-art selective surfaces. With straightforward optimization to improve solar absorption, our work shows the potential for unconcentrated solar thermal systems to reach stagnation temperatures exceeding 300 °C, thereby eliminating the need for solar concentrators for mid-temperature solar applications such as supplying process heat.

  5. Research on the Multilayer Free Damping Structure Design

    Directory of Open Access Journals (Sweden)

    Jie Meng

    2018-01-01

    Full Text Available The aim of this paper is to put forward a design model for multilayer free damping structures. It sets up a mathematical model and deduces the formula for its structural loss factor η and analyzes the change rules of η along with the change rate of the elastic modulus ratio q1, the change rate of the loss factors of damping materials q2, and the change rate of the layer thickness ratio q3 under the condition with the layer thickness ratio h2=1,3,5,10 by software MATLAB. Based on three specific damping structures, the mathematical model is verified through ABAQUS. With the given structural loss factor (η≥2 and the layer number (n=3,4,5,6, 34 kinds of multilayer free damping structures are then presented. The study is meant to provide a more flexible and more diverse design solution for multilayer free damping structures.

  6. Structures and electronics of buried and unburied semiconductor interfaces

    International Nuclear Information System (INIS)

    Kamiya, Itaru

    2011-01-01

    The structure of interfaces plays an important role in determining the electronic properties of semiconductor nanostructures. Here, such examples are shown and discussed using semiconductor nanostructures prepared by molecular beam epitaxy and colloidal synthesis.

  7. Conductive, magnetic and structural properties of multilayer films

    Science.gov (United States)

    Kotov, L. N.; Turkov, V. K.; Vlasov, V. S.; Lasek, M. P.; Kalinin, Yu E.; Sitnikov, A. V.

    2013-12-01

    Composite-semiconductor and composite-dielectric multilayer films were obtained by the ion beam sputtering method in the argon and hydrogen atmospheres with compositions: {[(Co45-Fe45-Zr10)x(Al2O3)y]-[α-Si]}120, {[(Co45-Ta45-Nb10)x(SiO2)y]-[SiO2]}56, {[(Co45-Fe45-Zr10)x(Al2O3)y]-[α-Si:H]}120. The images of surface relief and distribution of the dc current on composite layer surface were obtained with using of atomic force microscopy (AFM). The dependencies of specific electric resistance, ferromagnetic resonance (FMR) fields and width of line on metal (magnetic) phase concentration x and nanolayers thickness of multilayer films were obtained. The characteristics of FMR depend on magnetic interaction among magnetic granules in the composite layers and between the layers. These characteristics depend on the thickness of composite and dielectric or semiconductor nanolayers. The dependences of electric microwave losses on the x and alternating field frequency were investigated.

  8. Negative Refraction Using Frequency-Tuned Oxide Multilayer Structure

    Directory of Open Access Journals (Sweden)

    Yalin Lu

    2008-01-01

    Full Text Available An oxide-based multilayer structure was proposed to realize negative refraction. The multilayer composes of alternative layers having negative permittivity and negative permeability, respectively. In order to realize negative refraction, their dielectric and magnetic resonances of layers will be tuned to the frequency as close as possibly via changing their temperature, composition, structure, and so forth. Such oxide-based NIMs are attractive for their potential applications as optical super lenses, imagers, optical cloaking, sensors, and so forth, those are required with low-loss, low-cost, and good fabrication flexibility.

  9. Radiography simulation based on exposure buildup factors for multilayer structures

    International Nuclear Information System (INIS)

    Marinkovic, Predrag; Pesic, Milan

    2009-01-01

    Monte Carlo techniques were usually used to study the effect of scattered photons on a radiographic X-ray image. Such approach is accurate, but computer time consuming. On the other hand, the exposure buildup factors can be used as approximate and efficient assessment to account for the scattering of X-rays. This method uses the known radiography parameters to find the resulting detector exposure due to both scattered and un-collided photons. A model for radiography simulation, based on X-ray dose buildup factor, is proposed. This model includes non-uniform attenuation in voxelized object of imaging (patient body tissue). Composition of patient body is considered as a multi-layer structure. Various empirical formulas exist for multi-layer structure calculations and they all calculate multi-layer buildup factors by combining single-layer buildup factors. The proposed model is convenient in cases when more exact techniques (like Monte Carlo) are not economical. (author)

  10. The electronic structure of impurities in semiconductors

    CERN Multimedia

    Nylandsted larsen, A; Svane, A

    2002-01-01

    The electronic structure of isolated substitutional or interstitial impurities in group IV, IV-IV, and III-V compound semiconductors will be studied. Mössbauer spectroscopy will be used to investigate the incorporation of the implanted isotopes on the proper lattice sites. The data can be directly compared to theoretical calculations using the LMTO scheme. Deep level transient spectroscopy will be used to identify the band gap levels introduced by metallic impurities, mainly in Si~and~Si$ _{x}$Ge$_{1-x}$. \\\\ \\\\

  11. Simultaneous measurements of top surface and its underlying film surfaces in multilayer film structure.

    Science.gov (United States)

    Ghim, Young-Sik; Rhee, Hyug-Gyo; Davies, Angela

    2017-09-19

    With the growth of 3D packaging technology and the development of flexible, transparent electrodes, the use of multilayer thin-films is steadily increasing throughout high-tech industries including semiconductor, flat panel display, and solar photovoltaic industries. Also, this in turn leads to an increase in industrial demands for inspection of internal analysis. However, there still remain many technical limitations to overcome for measurement of the internal structure of the specimen without damage. In this paper, we propose an innovative optical inspection technique for simultaneous measurements of the surface and film thickness corresponding to each layer of multilayer film structures by computing the phase and reflectance over a wide range of wavelengths. For verification of our proposed method, the sample specimen of multilayer films was fabricated via photolithography process, and the surface profile and film thickness of each layer were measured by two different techniques of a stylus profilometer and an ellipsometer, respectively. Comparison results shows that our proposed technique enables simultaneous measurements of the top surface and its underlying film surfaces with high precision, which could not be measured by conventional non-destructive methods.

  12. The structure and morphology of semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Kadavanich, Andreas V. [Univ. of California, Berkeley, CA (United States). Dept. of Chemistry

    1997-11-01

    Colloidal semiconductor nanocrystals were studied using High Resolution Transmission Electron Microscopy (HRTEM). Organically capped nanocrystals were found to have faceted shapes consistent with Wulff polyhedra after the effects of capping ligands on surface energies were taken into account. The basic shape thus derived for wurtzite (WZ) structure CdSe nanocrystals capped by tri-octyl phosphine oxide (TOPO) was a truncated hexagonal prism, elongated alone the <001> axis with (100) and (002) facets. This structure has C{sub 3v} point group symmetry. The main defect in this structure is a stacking fault (a single layer of zinc blende type stacking), which does not significantly affect the shape (does not alter the point group).

  13. Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS equipment

    Directory of Open Access Journals (Sweden)

    Ann-Kathrin Kleinschmidt

    2016-11-01

    Full Text Available Reflectance anisotropy spectroscopy (RAS equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

  14. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.; Wang, Zhenwei; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured

  15. Electronic structure of defects in semiconductor heterojunctions

    International Nuclear Information System (INIS)

    Haussy, Bernard; Ganghoffer, Jean Francois

    2002-01-01

    Full text.heterojunctions and semiconductors and superlattices are well known and well used by people interested in optoelectronics communications. Components based on the use of heterojunctions are interesting for confinement of light and increase of quantum efficiency. An heterojunction is the contact zone between two different semiconductors, for example GaAs and Ga 1-x Al x As. Superlattices are a succession of heterojunctions (up to 10 or 20). These systems have been the subjects of many experiments ao analyse the contact between semiconductors. They also have been theoretically studied by different types of approach. The main result of those studies is the prediciton of band discontinuities. Defects in heterojunctions are real traps for charge carriers; they can affect the efficiency of the component decreasing the currents and the fluxes in it. the knowledge of their electronic structure is important, a great density of defects deeply modifies the electronic structure of the whole material creating real new bands of energy in the band structure of the component. in the first part of this work, we will describe the heterostructure and the defect in terms of quantum wells and discrete levels. This approach allows us to show the role of the width of the quantum well describing the structure but induces specific behaviours due to the one dimensional modelling. Then a perturbative treatment is proposed using the Green's functions formalism. We build atomic chains with different types of atoms featuring the heterostructure and the defect. Densities of states of a structure with a defect and levels associated to the defect are obtained. Results are comparable with the free electrons work, but the modelling do not induce problems due to a one dimensional approach. To extend our modelling, a three dimensions approach, based on a cavity model, is investigated. The influence of the defect, - of hydrogenoid type - introduced in the structure, is described by a cavity

  16. Multilayer Stochastic Block Models Reveal the Multilayer Structure of Complex Networks

    Directory of Open Access Journals (Sweden)

    Toni Vallès-Català

    2016-03-01

    Full Text Available In complex systems, the network of interactions we observe between systems components is the aggregate of the interactions that occur through different mechanisms or layers. Recent studies reveal that the existence of multiple interaction layers can have a dramatic impact in the dynamical processes occurring on these systems. However, these studies assume that the interactions between systems components in each one of the layers are known, while typically for real-world systems we do not have that information. Here, we address the issue of uncovering the different interaction layers from aggregate data by introducing multilayer stochastic block models (SBMs, a generalization of single-layer SBMs that considers different mechanisms of layer aggregation. First, we find the complete probabilistic solution to the problem of finding the optimal multilayer SBM for a given aggregate-observed network. Because this solution is computationally intractable, we propose an approximation that enables us to verify that multilayer SBMs are more predictive of network structure in real-world complex systems.

  17. Laser-induced luminescence of multilayer structures based on polyimides and CdSe and CdSe/ZnS nanocrystals

    International Nuclear Information System (INIS)

    Chistyakov, A A; Dayneko, S V; Zakharchenko, K V; Kolesnikov, V A; Tedoradze, M G; Mochalov, K E; Oleinikov, V A

    2009-01-01

    Laser-induced luminescence of multilayer structures based on the solids of CdSe and CdSe/ZnS nanocrystals, different organic semiconductors and on the layers of organic semiconductors with embedded nanocrystals has been investigated. Drastic decrease of luminescence quantum yield is observed in the films of CdSe nanocrystals on organic semiconductors compared to those on optical glasses. The luminescence of the nanocrystals in the matrices of organic semiconductors and in multilayer structures is shown to be suppressed. The effects observed are explained by the transfer of photogenerated carriers from the nanocrystals to the molecules of organic semiconductors. The presence of the charge transfer is confirmed by a drastic increase in the conductivity (by 2 – 4 orders of magnitude) and in photovoltaic effect at the presence of CdSe and CdSe/ZnS nanocrystals in the structures under investigation. The prospects of using the multilayer structures for development new materials for solar cells are discussed

  18. Transverse peltier effect in Pb-Bi{sub 2}Te{sub 3} multilayer structures

    Energy Technology Data Exchange (ETDEWEB)

    Reitmaier, Christina; Walther, Franziska; Kyarad, Amir; Lengfellner, Hans [University of Regensburg (Germany)

    2009-07-01

    Metal-semiconductor multilayer structures show, according to model calculations, large anisotropy in their electrical and thermal transport properties. Multilayer stacks consisting of alternating layers of Pb and n-type Bi{sub 2}Te{sub 3} and prepared by a heating procedure displayed large thermoelectric anisotropy up to {delta}S{approx}200 {mu} V/K, depending on the thickness ratio p=d{sub BiTe}/d{sub Pb}, where d{sub BiTe} and d{sub Pb} are the thicknesses of Bi{sub 2}Te{sub 3} and Pb layers, respectively. From multilayer stacks, tilted samples with layers inclined with respect to the sample surface where obtained by cutting stacks obliquely to the stack axis. Non-zero off-diagonal elements in the Seebeck-tensor describing the thermopower of tilted samples allow for the occurance of a transverse Peltier effect. Experimental results demonstrate cooling by the transverse Peltier effect and are compared to model calculations.

  19. Optical properties of semiconductors quantum microcavity structures

    International Nuclear Information System (INIS)

    Afshar, A.M.

    1996-12-01

    The principal phenomenon investigated in this thesis is vacuum Rabi coupling in semiconductor microcavity structures. In these structures quantum well excitons are embedded in a Fabry - Perot like cavity, defined by two semiconductor dielectric mirrors. In such a system the coupled exciton and cavity photon mode form a mixed - mode polariton, where on - resonance there are two branches, each having 50% exciton and 50% photon character. The separation between the upper and lower branches is a measure of the coupling strength where the strength is dependent on the exciton oscillator strength. This interaction is known as vacuum Rabi coupling, and clear anticrossing is seen when the exciton is tuned through the cavity. In our reflectivity experiments we demonstrate control of the coupling between the cavity mode and the exciton by varying temperature, applied electric or magnetic field. Modelling of the reflectivity spectra and the tuning was done using a Transfer Matrix Reflectivity (TMR) model or a linear dispersion model, where in both cases the excitons are treated as Lorentz oscillators. Temperature tuning is achieved because exciton energy decreases with temperature at a much faster rate than the cavity mode. We have demonstrated vacuum Rabi coupling of the cavity mode with both the heavy - hole and light - hole excitons. Electric field tuning is achieved via the quantum confined Stark effect which decreases the exciton energy with increasing field, whilst at the same time the cavity mode energy remains constant. A study of how the electric field reduction of exciton oscillator strength reduces the vacuum Rabi coupling strength is performed. We report the first observation in a semiconductor structure of motional narrowing, seen in both electric field and in temperature tuning experiments at high magnetic field. In magnetic field studies we show how magnetic field induced increase in exciton oscillator strength affects the vacuum Rabi coupling. We also show by

  20. Below-bandgap photoreflection spectroscopy of semiconductor laser structures

    International Nuclear Information System (INIS)

    Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

    2004-01-01

    A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

  1. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    Science.gov (United States)

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  2. Optimisation of multi-layer rotationally moulded foamed structures

    Science.gov (United States)

    Pritchard, A. J.; McCourt, M. P.; Kearns, M. P.; Martin, P. J.; Cunningham, E.

    2018-05-01

    Multi-layer skin-foam and skin-foam-skin sandwich constructions are of increasing interest in the rotational moulding process for two reasons. Firstly, multi-layer constructions can improve the thermal insulation properties of a part. Secondly, foamed polyethylene sandwiched between solid polyethylene skins can increase the mechanical properties of rotationally moulded structural components, in particular increasing flexural properties and impact strength (IS). The processing of multiple layers of polyethylene and polyethylene foam presents unique challenges such as the control of chemical blowing agent decomposition temperature, and the optimisation of cooling rates to prevent destruction of the foam core; therefore, precise temperature control is paramount to success. Long cooling cycle times are associated with the creation of multi-layer foam parts due to their insulative nature; consequently, often making the costs of production prohibitive. Devices such as Rotocooler®, a rapid internal mould water spray cooling system, have been shown to have the potential to significantly decrease cooling times in rotational moulding. It is essential to monitor and control such devices to minimise the warpage associated with the rapid cooling of a moulding from only one side. The work presented here demonstrates the use of threaded thermocouples to monitor the polymer melt in multi-layer sandwich constructions, in order to analyse the cooling cycle of multi-layer foamed structures. A series of polyethylene skin-foam test mouldings were produced, and the effect of cooling medium on foam characteristics, mechanical properties, and process cycle time were investigated. Cooling cycle time reductions of 45%, 26%, and 29% were found for increasing (1%, 2%, and 3%) chemical blowing agent (CBA) amount when using internal water cooling technology from ˜123°C compared with forced air cooling (FAC). Subsequently, a reduction of IS for the same skin-foam parts was found to be 1%, 4

  3. Beamwidth for asymmetric and multilayer semiconductor laser structures

    DEFF Research Database (Denmark)

    Buus, Jens

    1981-01-01

    An expression for the far field of the fundamental TE0mode in an asymmetrical dielectric slab waveguide is derived. By using normalized waveguide parameters, universal plots of the beamwidth are presented. These plots include the obliquity factor correction. Experimental results for symmetrical G...

  4. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  5. A general centroid determination methodology, with application to multilayer dielectric structures and thermally stimulated current measurements

    International Nuclear Information System (INIS)

    Miller, S.L.; Fleetwood, D.M.; McWhorter, P.J.; Reber, R.A. Jr.; Murray, J.R.

    1993-01-01

    A general methodology is developed to experimentally characterize the spatial distribution of occupied traps in dielectric films on a semiconductor. The effects of parasitics such as leakage, charge transport through more than one interface, and interface trap charge are quantitatively addressed. Charge transport with contributions from multiple charge species is rigorously treated. The methodology is independent of the charge transport mechanism(s), and is directly applicable to multilayer dielectric structures. The centroid capacitance, rather than the centroid itself, is introduced as the fundamental quantity that permits the generic analysis of multilayer structures. In particular, the form of many equations describing stacked dielectric structures becomes independent of the number of layers comprising the stack if they are expressed in terms of the centroid capacitance and/or the flatband voltage. The experimental methodology is illustrated with an application using thermally stimulated current (TSC) measurements. The centroid of changes (via thermal emission) in the amount of trapped charge was determined for two different samples of a triple-layer dielectric structure. A direct consequence of the TSC analyses is the rigorous proof that changes in interface trap charge can contribute, though typically not significantly, to thermally stimulated current

  6. Electronic structure of point defects in semiconductors

    International Nuclear Information System (INIS)

    Bruneval, Fabien

    2014-01-01

    This 'Habilitation a diriger des Recherches' memoir presents most of my scientific activities during the past 7 years, in the field of electronic structure calculations of defects in solids. Point defects (vacancies, interstitials, impurities) in functional materials are a key parameter to determine if these materials will actually fill the role they have been assigned or not. Indeed, the presence of defects cannot be avoided when the temperature is increased or when the material is subjected to external stresses, such as irradiation in the nuclear reactors and in artificial satellites with solar radiations. However, in many cases, defects are introduced in the materials on purpose to tune the electronic transport, optical or even magnetic properties. This procedure is called the doping of semiconductors, which is the foundation technique for transistors, diodes, or photovoltaic cells. However, doping is not always straightforward and unexpected features may occur, such as doping asymmetry or Fermi level pinning, which can only be explained by complex phenomena involving different types of defects or complexes of defects. In this context, the calculations of electronic structure ab initio is an ideal tool to complement the experimental observations, to gain the understanding of phenomena at the atomic level, and even to predict the properties of defects. The power of the ab initio calculations comes from their ability to describe any system of electrons and nuclei without any specific adjustment. But although there is a strong need for numerical simulations in this field, the ab initio calculations for defects are still under development as of today. The work presented in this memoir summarizes my contributions to methodological developments on this subject. These developments have followed two main tracks. The first topic is the better understanding of the unavoidable finite size effects. Indeed, defects in semiconductors or insulators are generally present in

  7. Structural evolution of Ti/TiC multilayers

    International Nuclear Information System (INIS)

    Dahan, I.; Frage, N.; Dariel, M.P.

    2004-01-01

    Hard coatings based on metal/ceramic multilayers with periods in the nanometer range have been shown to possess some potential for improved tribological and mechanical properties. The present work is concerned with the structural evolution of (Ti/TiC) multilayers. Two kinds of multilayers consisting of 30 equithick (40 nm)TiC layers and 20 and 60 nm thick Ti layers, respectively, were sputter deposited on Mo substrates. The structural and the compositional evolution of these multilayers were examined by x-ray diffraction, transition electron microscopy (TEM), high-resolution TEM, Auger electron microscopy spectroscopy and differential thermal analysis (DTA), in the as-deposited state and after various heat treatments up to 500 deg. C. Initially, the Ti layers had a crystalline columnar grain structure displaying a (002) texture. The TiC layers displayed weak crystallinity with a pronounced (111) texture. In the course of the heat treatments, carbon diffused from the carbide layer into the adjacent Ti layers transforming the latter into off-stoichiometric TiC x with x≅0.5 and simultaneously depleting the carbon content of the initial carbide layer. The formed TiC x layers maintained the textural relationship with the neighboring TiC layers, consistent with a transformation that involved only a ABAB to ABC stacking change of the Ti sublattice. Increased mobility of the Ti atoms in carbon-depleted original TiC layers led to their full or partial recrystallization. The thermal effects associated both with the transformation of Ti layers into TiC, due to the influx of carbon atoms, and with the recrystallization of the original TiC layers were clearly revealed by the DTA measurements

  8. Selective optical transmission in anisotropic multilayers structure

    International Nuclear Information System (INIS)

    Ouchani, N.; Bria, D.; Nougaoui, A.; Merad, A.E.

    2007-08-01

    We developed a Green's function method to study theoretically a single-defect photonic crystal composed of anisotropic dielectric materials. This structure can trap light of a given frequency range and filter only a certain frequency light with a very high quality. It is shown that the defect modes appear as peaks in the transmission spectrum. Their intensities and frequency positions depend on the incidence angle and the orientation of the principal axes of layers consisting of the superlattice and the layer defect. Our structure offers a great variety of possibilities for creating and controlling the number and transmitted intensities of defect modes. It can be a good candidate for realizing a selective electromagnetic filter. In addition to this filtration process, the defective anisotropic photonic crystal can be used to switch the modes when appropriate geometry is selected. (author)

  9. Nano-sized Adsorbate Structure Formation in Anisotropic Multilayer System

    Science.gov (United States)

    Kharchenko, Vasyl O.; Kharchenko, Dmitrii O.; Yanovsky, Vladimir V.

    2017-05-01

    In this article, we study dynamics of adsorbate island formation in a model plasma-condensate system numerically. We derive the generalized reaction-diffusion model for adsorptive multilayer system by taking into account anisotropy in transfer of adatoms between neighbor layers induced by electric field. It will be found that with an increase in the electric field strength, a structural transformation from nano-holes inside adsorbate matrix toward separated nano-sized adsorbate islands on a substrate is realized. Dynamics of adsorbate island sizes and corresponding distributions are analyzed in detail. This study provides an insight into details of self-organization of adatoms into nano-sized adsorbate islands in anisotropic multilayer plasma-condensate systems.

  10. Structural properties of the Chinese air transportation multilayer network

    International Nuclear Information System (INIS)

    Hong, Chen; Zhang, Jun; Cao, Xian-Bin; Du, Wen-Bo

    2016-01-01

    Highlights: • We investigate the structural properties of the Chinese air transportation multilayer network (ATMN). • We compare two main types of layers corresponding to major and low-cost airlines. • It is found that small-world property and rich-club effect of the Chinese ATMN are mainly caused by major airlines. - Abstract: Recently multilayer networks are attracting great attention because the properties of many real-world systems cannot be well understood without considering their different layers. In this paper, we investigate the structural properties of the Chinese air transportation multilayer network (ATMN) by progressively merging layers together, where each commercial airline (company) defines a layer. The results show that the high clustering coefficient, short characteristic path length and large collection of reachable destinations of the Chinese ATMN can only emerge when several layers are merged together. Moreover, we compare two main types of layers corresponding to major and low-cost airlines. It is found that the small-world property and the rich-club effect of the Chinese ATMN are mainly caused by those layers corresponding to major airlines. Our work will highlight a better understanding of the Chinese air transportation network.

  11. Structural color of a lycaenid butterfly: analysis of an aperiodic multilayer structure

    International Nuclear Information System (INIS)

    Yoshioka, S; Shimizu, Y; Kinoshita, S; Matsuhana, B

    2013-01-01

    We investigated the structural color of the green wing of the lycaenid butterfly Chrysozephyrus brillantinus. Electron microscopy revealed that the bottom plate of the cover scale on the wing consists of an alternating air–cuticle multilayer structure. However, the thicknesses of the layers were not constant but greatly differed depending on the layer, unlike the periodic multilayer designs often adopted for artificial laser-reflecting mirrors. The agreement between the experimentally determined and theoretically calculated reflectance spectra led us to conclude that the multilayer interference in the aperiodic system is the primary origin of the structural color. We analyzed optical interference in this aperiodic system using a simple analytical model and found that two spectral peaks arise from constructive interference among different parts of the multilayer structure. We discuss the advantages and disadvantages of the aperiodic system over a periodic one. (paper)

  12. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Zhenfei, E-mail: zhfluo8@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Zhou, Xun, E-mail: zx_zky@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yan, Dawei [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Wang, Du; Li, Zeyu [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yang, Cunbang [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-01-01

    Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO{sub 2} thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T{sub SMT}) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO{sub 2} grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T{sub SMT} was found to decrease as average VO{sub 2} grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO{sub 2} film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure.

  13. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    International Nuclear Information System (INIS)

    Luo, Zhenfei; Zhou, Xun; Yan, Dawei; Wang, Du; Li, Zeyu; Yang, Cunbang; Jiang, Yadong

    2014-01-01

    Nanocrystalline vanadium dioxide (VO 2 ) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO 2 thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T SMT ) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO 2 grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T SMT was found to decrease as average VO 2 grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO 2 film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure

  14. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  15. Domain structures and magnetization reversal in Co/Pd and CoFeB/Pd multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Sbiaa, R., E-mail: rachid@squ.edu.om [Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123 (Oman); Ranjbar, M. [Physics Department, University of Gothenburg, 412 96 Gothenburg (Sweden); Åkerman, J. [Physics Department, University of Gothenburg, 412 96 Gothenburg (Sweden); Materials Physics, School of ICT, Royal Institute of Technology (KTH), 164 40 Kista (Sweden)

    2015-05-07

    Domain structures and magnetization reversal of (Co/Pd) and (CoFeB/Pd) multilayers with 7 and 14 repeats were investigated. The Co-based multilayers show much larger coercivities, a better squareness, and a sharper magnetization switching than CoFeB-based multilayers. From magnetic force microscopy observations, both structures show strong reduction in domains size as the number of repeats increases but the magnetic domains for Co-based multilayers are more than one order of magnitude larger than for CoFeB-based multilayers. By imaging domains at different times, breaks in the (CoFeB/Pd) multilayer stripes were observed within only few hours, while no change could be seen for (Co/Pd) multilayers. Although CoFeB single layers are suitable for magnetoresistive devices due to their large spin polarization and low damping constants, their lamination with Pd suffers mainly from thermal instability.

  16. Experimental analysis on stress wave in inhomogeneous multi-layered structures

    International Nuclear Information System (INIS)

    Cho, Yun Ho; Ham, Hyo Sick

    1998-01-01

    The guided wave propagation in inhomogeneous multi-layered structures is experimentally explored based on theoretical dispersion curves. It turns out that proper selection of incident angle and frequency is critical for guided wave generation in multi-layered structures. Theoretical dispersion curves greatly depend on adhesive zone thickness, layer thickness and material properties. It was possible to determine the adhesive zone thickness of an inhomogeneous multi-layered structure by monitoring experimentally the change of dispersion curves.

  17. High-frequency characteristics of glass/ceramic composite and alumina multilayer structures

    International Nuclear Information System (INIS)

    Niwa, K.; Suzuki, H.; Yokoyama, H.; Kamechara, N.; Tsubone, K.; Tanisawa, H.; Sugiki, H.

    1990-01-01

    This paper reports the transmission characteristics of glass/ceramic composite (borosilicate glass/alumina) and alumina multilayer structures examined. The triplate stripline formed in the glass/ceramic multilayer shows low conductor and dielectric loss. Alumina multilayer, however, has twice the transmission loss at 10 GHz, because the resistivity of W in the alumina multilayer is higher than the Cu in the glass/ceramic multilayer. Crosstalk between striplines in the glass/ceramics is less than -80 dB up to 11 GHz and 9 GHz for alumina

  18. Finite element modeling of multilayered structures of fish scales.

    Science.gov (United States)

    Chandler, Mei Qiang; Allison, Paul G; Rodriguez, Rogie I; Moser, Robert D; Kennedy, Alan J

    2014-12-01

    The interlinked fish scales of Atractosteus spatula (alligator gar) and Polypterus senegalus (gray and albino bichir) are effective multilayered armor systems for protecting fish from threats such as aggressive conspecific interactions or predation. Both types of fish scales have multi-layered structures with a harder and stiffer outer layer, and softer and more compliant inner layers. However, there are differences in relative layer thickness, property mismatch between layers, the property gradations and nanostructures in each layer. The fracture paths and patterns of both scales under microindentation loads were different. In this work, finite element models of fish scales of A. spatula and P. senegalus were built to investigate the mechanics of their multi-layered structures under penetration loads. The models simulate a rigid microindenter penetrating the fish scales quasi-statically to understand the observed experimental results. Study results indicate that the different fracture patterns and crack paths observed in the experiments were related to the different stress fields caused by the differences in layer thickness, and spatial distribution of the elastic and plastic properties in the layers, and the differences in interface properties. The parametric studies and experimental results suggest that smaller fish such as P. senegalus may have adopted a thinner outer layer for light-weighting and improved mobility, and meanwhile adopted higher strength and higher modulus at the outer layer, and stronger interface properties to prevent ring cracking and interface cracking, and larger fish such as A. spatula and Arapaima gigas have lower strength and lower modulus at the outer layers and weaker interface properties, but have adopted thicker outer layers to provide adequate protection against ring cracking and interface cracking, possibly because weight is less of a concern relative to the smaller fish such as P. senegalus. Published by Elsevier Ltd.

  19. Resistive field structures for semiconductor devices and uses therof

    Science.gov (United States)

    Marinella, Matthew; DasGupta, Sandeepan; Kaplar, Robert; Baca, Albert G.

    2017-09-12

    The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein.

  20. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  1. INVESTIGATION OF THERMAL BEHAVIOR OF MULTILAYERED FIRE RESISTANT STRUCTURE

    Directory of Open Access Journals (Sweden)

    R. GUOBYS

    2016-09-01

    Full Text Available This paper presents experimental and numerical investigations of thermal behavior under real fire conditions of new generation multilayered fire resistant structure (fire door, dimensions H × W × D: 2090 × 980 × 52 mm combining high strength and fire safety. This fire door consists of two steel sheets (thickness 1.5 and 0.7 mm with stone wool ( = 33 kg/m3, k = 0.037 W/mK, E = 5000 N/m2,  = 0.2 insulating layer in between. One surface of the structure was heated in fire furnace for specified period of time of 60 min. Temperature and deformation of opposite surface were measured from outside at selected measuring points during fire resistance test. Results are presented as temperature-time and thermal deformation-time graphs. Experimental results were compared with numerical temperature field simulation results obtained from SolidWorks®Simulation software. Numerical results were found to be in good agreement with experimental data. The percent differences between door temperatures from simulation and fire resistance test don’t exceed 8%. This shows that thermal behaviour of such multilayered structures can be investigated numerically, thus avoiding costly and time-consuming fire resistance tests. It is established that investigated structure should be installed in a way that places thicker steel sheet closer to the potential heat source than thinner one. It is also obtained that stone wool layer of higher density should be used to improve fire resistance of the structure.

  2. Exact thermal representation of multilayer rectangular structures by infinite plate structures using the method of images

    Science.gov (United States)

    Palisoc, Arthur L.; Lee, Chin C.

    1988-12-01

    Using the method of images and the analytical temperature solution to the multilayer infinite plate structure, the thermal profile over finite rectangular multilayer integrated circuit devices can be calculated exactly. The advantage of using the image method lies in the enhanced capability of arriving at an analytical solution for structures where analytical solutions do not apparently exist, e.g., circular or arbitrarily oriented rectangular sources over multilayered rectangular structures. The new approach results in large savings in computer CPU time especially for small sources over large substrates. The method also finds very important applications to integrated circuit devices with heat dissipating elements close to the edge boundaries. Results from two examples indicate that the edge boundaries of a device may also be utilized to remove heat from it. This additional heat removing capability should have important applications in high power devices.

  3. Printable semiconductor structures and related methods of making and assembling

    Science.gov (United States)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

    2013-03-12

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  4. High precision stress measurements in semiconductor structures by Raman microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Uhlig, Benjamin

    2009-07-01

    Stress in silicon structures plays an essential role in modern semiconductor technology. This stress has to be measured and due to the ongoing miniaturization in today's semiconductor industry, the measuring method has to meet certain requirements. The present thesis deals with the question how Raman spectroscopy can be used to measure the state of stress in semiconductor structures. In the first chapter the relation between Raman peakshift and stress in the material is explained. It is shown that detailed stress maps with a spatial resolution close to the diffraction limit can be obtained in structured semiconductor samples. Furthermore a novel procedure, the so called Stokes-AntiStokes-Difference method is introduced. With this method, topography, tool or drift effects can be distinguished from stress related influences in the sample. In the next chapter Tip-enhanced Raman Scattering (TERS) and its application for an improvement in lateral resolution is discussed. For this, a study is presented, which shows the influence of metal particles on the intensity and localization of the Raman signal. A method to attach metal particles to scannable tips is successfully applied. First TERS scans are shown and their impact on and challenges for high resolution stress measurements on semiconductor structures is explained. (orig.)

  5. An effective pair potential for liquid semiconductor, Se: Structure and ...

    Indian Academy of Sciences (India)

    This model potential is then used to describe through low-order perturbation theory, the structure and related dynamical properties like self-diffusion coefficient and shear viscosity of this complex liquid over a wide range of temperatures. Keywords. Liquid semiconductor; pair potential; structure and dynamical properties.

  6. An effective pair potential for liquid semiconductor, Se: Structure and ...

    Indian Academy of Sciences (India)

    The effective pair potential of liquid semiconductor Se is extracted from its experimental structure factor data using an accurate liquid state theory and this shows important basic features. A model potential incorporating the basic features of the structure factor extracted potential is suggested. This model potential is then used ...

  7. Direct Magnetic Relief Recording Using As40S60: Mn-Se Nanocomposite Multilayer Structures.

    Science.gov (United States)

    Stronski, A; Achimova, E; Paiuk, O; Meshalkin, A; Prisacar, A; Triduh, G; Oleksenko, P; Lytvyn, P

    2017-12-01

    Processes of holographic recording of surface relief structures using As 2 S 3 :Mn-Se multilayer nanostructures as registering media were studied in this paper. Optical properties of As 2 S 3 :Mn, Se layers, and As 2 S 3 :Mn-Se multilayer nanostructures were investigated. Values of optical bandgaps were obtained from Tauc dependencies. Surface relief diffraction gratings were recorded. Direct one-stage formation of surface relief using multilayer nanostructures is considered. For the first time, possibility of direct formation of magnetic relief simultaneous with surface relief formation under optical recording using As 2 S 3 :Mn-Se multilayer nanostructures is shown.

  8. Structural integrity of ceramic multilayer capacitor materials and ceramic multilayer capacitors

    NARCIS (Netherlands)

    With, de G.

    1993-01-01

    An review with 61 refs. is given of the fracture of and stress situation in ceramic capacitor materials and ceramic multilayer capacitors. A brief introduction to the relevant concepts is given first. Next the data for capacitor materials and the data for capacitors are discussed. The materials data

  9. Fabrication of smooth patterned structures of refractory metals, semiconductors, and oxides via template stripping.

    Science.gov (United States)

    Park, Jong Hyuk; Nagpal, Prashant; McPeak, Kevin M; Lindquist, Nathan C; Oh, Sang-Hyun; Norris, David J

    2013-10-09

    The template-stripping method can yield smooth patterned films without surface contamination. However, the process is typically limited to coinage metals such as silver and gold because other materials cannot be readily stripped from silicon templates due to strong adhesion. Herein, we report a more general template-stripping method that is applicable to a larger variety of materials, including refractory metals, semiconductors, and oxides. To address the adhesion issue, we introduce a thin gold layer between the template and the deposited materials. After peeling off the combined film from the template, the gold layer can be selectively removed via wet etching to reveal a smooth patterned structure of the desired material. Further, we demonstrate template-stripped multilayer structures that have potential applications for photovoltaics and solar absorbers. An entire patterned device, which can include a transparent conductor, semiconductor absorber, and back contact, can be fabricated. Since our approach can also produce many copies of the patterned structure with high fidelity by reusing the template, a low-cost and high-throughput process in micro- and nanofabrication is provided that is useful for electronics, plasmonics, and nanophotonics.

  10. Optical properties of the semiconductor quantum structure

    International Nuclear Information System (INIS)

    Haratizadeh, H.; Holtz, P.O.; Monemar, B.; Karlsoon, K.F.; Moskalenko, E.S.; Amano, H.; Akasaki, I.; Schoenfeld, W.V.; Garcia, J.M.; Petroff, P.M.

    2004-01-01

    Optical properties of the quantum structures have been discussed with emphasize of the AlGaN/GaN multiple quantum wells and InAs/GaAs quantum dot structures. We report on a detailed study of low temperature photoluminescence in Al 0 .07Ga 0 .93 N/GaN multiple quantum wells. The structures were nominally undoped multiple quantum well grown on sapphire substrate. The structure from discrete well width variations is here resolved in photoluminescence spectra. The results demonstrate that the theoretically estimated fields in this work are consistent with the experimental spectra

  11. Physics of low-dimensional semiconductor structures

    CERN Document Server

    March, Norman; Tosi, Mario

    1993-01-01

    Presenting the latest advances in artificial structures, this volume discusses in-depth the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots It will serve as an invaluable reference and review for researchers and graduate students in solid-state physics, materials science, and electrical and electronic engineering

  12. Reference Models for Multi-Layer Tissue Structures

    Science.gov (United States)

    2016-09-01

    function of multi-layer tissues (etiology and management of pressure ulcers ). What was the impact on other disciplines? As part of the project, a data...simplification to develop cost -effective models of surface manipulation of multi-layer tissues. Deliverables. Specimen- (or subject) and region-specific...simplification to develop cost -effective models of surgical manipulation. Deliverables. Specimen-specific surrogate models of upper legs confirmed against data

  13. Boundary element method in dynamic interaction of structures with multilayers media

    International Nuclear Information System (INIS)

    Mihalache, N.; Poterasu, V.F.

    1993-01-01

    The paper presents the problems of dynamic interaction between the multilayers media and structure by means of B.E.M., using Green's functions. The structure considered by the authors as a particular problem concerns a reinforced concrete shear wall and soil foundation of three layers having different thickness and mechanical characteristics. The authors will present comparatively the stresses and the displacements in static and dynamic regime interaction response of the structure. Theoretical part of the paper presents: Green's functions for the multilayers media in dynamic regime, stiffness matrices, stresses and displacements in the multilayers media exprimed by means of the Green's functions induced by the shear and horizontal forces, computer program, consideration for dynamic, structure-foundation-multilayers soil foundation interaction. (author)

  14. Current-voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure

    Science.gov (United States)

    Wen, Jing; Zhang, Xitian; Gao, Hong; Wang, Mingjiao

    2013-12-01

    We present a method to calculate the I-V characteristics of semiconductor nanowires under the metal-semiconductor-metal (MSM) structure. The carrier concentration as an important parameter is introduced into the expression of the current. The subband structure of the nanowire has been considered for associating it with the position of the Fermi level and circumventing the uncertainties of the contact areas in the contacts. The tunneling and thermionic emission currents in the two Schottky barriers at the two metal-semiconductor contacts are discussed. We find that the two barriers have different influences on the I-V characteristics of the MSM structure, one of which under the forward bias plays the role of threshold voltage if its barrier height is large and the applied voltage is small, and the other under the reverse bias controls the shapes of I-V curves. Our calculations show that the shapes of the I-V curves for the MSM structure are mainly determined by the barrier heights of the contacts and the carrier concentration. The nearly identical I-V characteristics can be obtained by using different values of the barrier heights and carrier concentration, which means that the contact type conversion can be ascribed not only to the changes of the barrier heights but also that of the carrier concentration. We also discuss the mechanisms of the ohmic-Schottky conversions and clarify the ambiguity in the literature. The possibility about the variation of the carrier concentration under the applied fields has been confirmed by experimental results.

  15. Interface Structure of MoO3 on Organic Semiconductors

    Science.gov (United States)

    White, Robin T.; Thibau, Emmanuel S.; Lu, Zheng-Hong

    2016-01-01

    We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO3 on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are used to measure the evolution of the physical, chemical and electronic structure of the interfaces at various stages of MoO3 deposition on these organic semiconductor surfaces. For the interface physical structure, it is found that MoO3 diffuses into the underlying organic layer, exhibiting a trend of increasing diffusion with decreasing molecular molar mass. For the interface chemical structure, new carbon and molybdenum core-level states are observed, as a result of interfacial electron transfer from organic semiconductor to MoO3. For the interface electronic structure, energy level alignment is observed in agreement with the universal energy level alignment rule of molecules on metal oxides, despite deposition order inversion. PMID:26880185

  16. Quantum theory of opto-electric processes in multi-layered periodic semiconductors

    International Nuclear Information System (INIS)

    Kaniyazov, Sh.K.; Muratov, A.C.

    2002-01-01

    Physical model of contact of layered structures was constructed, supposing that it is built on the basis of two molecules with different polarisation and charge states. Taking into account an electronic gas in the contact region, Thomas-Fermi's equation was solved. An instant potential energy of one electron was obtained in the induction gradient force field arisen in the electron gas. Having substituted this potential energy with the potential of harmonic oscillator, formula was derived for calculating the main vibration frequency of oscillator vibration, as well as its energetic levels were obtained. It was shown that at the certain frequencies of monochromatic light signal the photo electromotive force changes it's sign. Such switching at the definite polarisation values is possible in two different frequencies. Note, the photo-switchers, that have two or three steady states, are of great interest in optoelectronic communications. (author)

  17. Positron Studies of Oxide-Semiconductor Structures

    OpenAIRE

    Uedono , A.; Wei , L.; Kawano , T.; Tanigawa , S.; Suzuki , R.; Ohgaki , H.; Mikado , T.

    1995-01-01

    The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured as a function of incident positron energy for SiO2/Si structures fabricated by various oxidation techniques. From the measurements, it was found that the formation probability of positronium (Ps) atoms in SiO2 films strongly depends on the growth condition...

  18. Inductance, electrically adjusted by semiconductor structure

    Directory of Open Access Journals (Sweden)

    Semenov А. А.

    2012-08-01

    Full Text Available A theoretical model of a passive flat inductor with electronic control is offered. Design charts of tank inductance and Q factor dependence on the forward bias voltage of n—i—p—i—n-structure, used as a specific core, the characteristics of which are regulated under the influence of an applied electric field, are presented. The comparison of design values with experimental features has shown their good correspondence with each other.

  19. Application of photoreflectance to advanced multilayer structures for photovoltaics

    International Nuclear Information System (INIS)

    Fuertes Marrón, D.; Cánovas, E.; Artacho, I.; Stanley, C.R.; Steer, M.; Kaizu, T.; Shoji, Y.; Ahsan, N.; Okada, Y.; Barrigón, E.; Rey-Stolle, I.; Algora, C.; Martí, A.; Luque, A.

    2013-01-01

    Highlights: ► Application of photoreflectance to advanced PV structures. ► Probing optoelectronics of nanostructures and multinary compounds. ► Determination of intensity of electric fields from FKOs. ► Distinguishing different oscillatory phenomena in PR. ► PR as a useful diagnostic tool in QD-, QW-SCs and MJSCs. -- Abstract: Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic properties of semiconductor materials and structures. It is a simple non-destructive and contactless technique which can be used in air at room temperature. We will present experimental results of the characterization carried out by means of PR on different types of advanced photovoltaic (PV) structures, including quantum-dot-based prototypes of intermediate band solar cells, quantum-well structures, highly mismatched alloys, and III–V-based multi-junction devices, thereby demonstrating the suitability of PR as a powerful diagnostic tool. Examples will be given to illustrate the value of this spectroscopic technique for PV including (i) the analysis of the PR spectra in search of critical points associated to absorption onsets; (ii) distinguishing signatures related to quantum confinement from those originating from delocalized band states; (iii) determining the intensity of the electric field related to built-in potentials at interfaces according to the Franz–Keldysh (FK) theory; and (v) determining the nature of different oscillatory PR signals among those ascribed to FK-oscillations, interferometric and photorefractive effects. The aim is to attract the interest of researchers in the field of PV to modulation spectroscopies, as they can be helpful in the analysis of their devices

  20. Application of photoreflectance to advanced multilayer structures for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Fuertes Marrón, D., E-mail: dfuertes@ies-def.upm.es [Instituto de Energía Solar – ETSIT, Technical University of Madrid, UPM, Madrid (Spain); Cánovas, E.; Artacho, I. [Instituto de Energía Solar – ETSIT, Technical University of Madrid, UPM, Madrid (Spain); Stanley, C.R.; Steer, M. [Department of Electronics and Electrical Engineering, University of Glasgow (United Kingdom); Kaizu, T.; Shoji, Y.; Ahsan, N.; Okada, Y. [Research Center for Advanced Science and Technology, University of Tokyo (Japan); Barrigón, E.; Rey-Stolle, I.; Algora, C.; Martí, A.; Luque, A. [Instituto de Energía Solar – ETSIT, Technical University of Madrid, UPM, Madrid (Spain)

    2013-05-15

    Highlights: ► Application of photoreflectance to advanced PV structures. ► Probing optoelectronics of nanostructures and multinary compounds. ► Determination of intensity of electric fields from FKOs. ► Distinguishing different oscillatory phenomena in PR. ► PR as a useful diagnostic tool in QD-, QW-SCs and MJSCs. -- Abstract: Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic properties of semiconductor materials and structures. It is a simple non-destructive and contactless technique which can be used in air at room temperature. We will present experimental results of the characterization carried out by means of PR on different types of advanced photovoltaic (PV) structures, including quantum-dot-based prototypes of intermediate band solar cells, quantum-well structures, highly mismatched alloys, and III–V-based multi-junction devices, thereby demonstrating the suitability of PR as a powerful diagnostic tool. Examples will be given to illustrate the value of this spectroscopic technique for PV including (i) the analysis of the PR spectra in search of critical points associated to absorption onsets; (ii) distinguishing signatures related to quantum confinement from those originating from delocalized band states; (iii) determining the intensity of the electric field related to built-in potentials at interfaces according to the Franz–Keldysh (FK) theory; and (v) determining the nature of different oscillatory PR signals among those ascribed to FK-oscillations, interferometric and photorefractive effects. The aim is to attract the interest of researchers in the field of PV to modulation spectroscopies, as they can be helpful in the analysis of their devices.

  1. Electronic structure of semiconductor quantum films

    International Nuclear Information System (INIS)

    Zhang, S.B.; Yeh, C.; Zunger, A.

    1993-01-01

    The electronic structure of thin (≤30 A) free-standing ideal films of Si(001), Si(110), and GaAs(110) is calculated using a plane-wave pseudopotential description. Unlike the expectation based on the simple effective-mass model, we find the following. (i) The band gaps of (001) quantum films exhibit even-odd oscillation as a function of the number N of monolayers. (ii) In addition to sine-type envelope functions which vanish at the film boundaries, some states have cosine envelope functions with extrema at boundaries. (iii) Even-layer Si(001) films exhibit at the valence-band maximum a state whose energy does not vary with the film thickness. Such zero confinement states have constant envelope throughout the film. (iv) Optical transitions in films exhibit boundary-imposed selection rules. Furthermore, oscillator strengths for pseudodirect transitions in the vicinity of forbidden direct transitions can be enhanced by several orders of magnitude. These findings, obtained in direct supercell calculations, can be explained in terms of a truncated crystal (TC) analysis. In this approach the film's wave functions are expanded in terms of pairs of bulk wave functions exhibiting a destructive interference at the boundaries. This maps the eigenvalue spectra of a film onto the bulk band structure evaluated at special k points which satisfy the boundary conditions. We find that the TC representation reproduces accurately the above-mentioned results of direct diagonalization of the film's Hamiltonian. This provides a simple alternative to the effective-mass model and relates the properties of quantum structures to those of the bulk material

  2. Spin Hall Effect in Doped Semiconductor Structures

    Science.gov (United States)

    Tse, Wang-Kong; Das Sarma, Sankar

    2006-03-01

    We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

  3. Electron Liquids in Semiconductor Quantum Structures

    International Nuclear Information System (INIS)

    Pinczuk, Aron

    2009-01-01

    The groups led by Stormer and Pinczuk have focused this project on goals that seek the elucidation of novel many-particle effects that emerge in two-dimensional electron systems (2DES) as the result from fundamental quantum interactions. This experimental research is conducted under extreme conditions of temperature and magnetic field. From the materials point of view, the ultra-high mobility systems in GaAs/AlGaAs quantum structures continue to be at the forefront of this research. The newcomer materials are based on graphene, a single atomic layer of graphite. The graphene research is attracting enormous attention from many communities involved in condensed matter research. The investigated many-particle phenomena include the integer and fractional quantum Hall effect, composite fermions, and Dirac fermions, and a diverse group of electron solid and liquid crystal phases. The Stormer group performed magneto-transport experiments and far-infrared spectroscopy, while the Pinczuk group explores manifestations of such phases in optical spectra.

  4. Optical properties of hybrid semiconductor-metal structures

    Energy Technology Data Exchange (ETDEWEB)

    Kreilkamp, L.E.; Pohl, M.; Akimov, I.A.; Yakovlev, D.R.; Bayer, M. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Belotelov, V.I.; Zvezdin, A.K. [A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, 119992 Moscow (Russian Federation); Karczewski, G.; Wojtowicz, T. [Institute of Physics, Polish Academy of Sciences, 02668 Warsaw (Poland); Rudzinski, A.; Kahl, M. [Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund (Germany)

    2012-07-01

    We study the optical properties of hybrid nanostructures comprising a semiconductor CdTe quantum well (QW) separated by a thin CdMgTe cap layer of 40 nm from a patterned gold film. The CdTe/CdMgTe QW structure with a well width of 10nm was grown by molecular beam epitaxy. The one-dimensional periodic gold films on top were made using e-beam lithography and lift-off process. The investigated structures can be considered as plasmonic crystals because the metal films attached to the semiconductor are patterned with a period in the range from 475 to 600 nm, which is comparable to the surface plasmon-polariton (SPP) wavelength. Angle dependent reflection spectra at room temperature clearly show plasmonic resonances. PL spectra taken at low temperatures of about 10 K under below- and above-barrier illumination show significant modifications compared to the unstructured QW sample. The number of emission lines and their position shift change depending on the excitation energy. The role of exciton-SPP coupling and Schottky barrier at the semiconductor-metal interface are discussed.

  5. Microscopical Studies of Structural and Electronic Properties of Semiconductors

    CERN Multimedia

    2002-01-01

    The electronic and structural properties of point defects in semiconductors, e.g. radiation defects, impurities or passivating defects can excellently be studied by the hyperfine technique of Perturbed Angular Correlation (PAC). The serious limitation of this method, the small number of chemically different radioactive PAC probe atoms can be widely overcome by means of ISOLDE. Providing shortliving isotopes, which represent common dopants as well as suitable PAC probe atoms, the ISOLDE facility enables a much broader application of PAC to problems in semiconductor physics.\\\\ Using the probe atom $^{111m}$ Cd , the whole class of III-V compounds becomes accessible for PAC investigations. First successful experiments in GaAs, InP and GaP have been performed, concerning impurity complex formation and plasma induced defects. In Si and Ge, the electronic properties~-~especially their influence on acceptor-donor interaction~-~could be exemplarily st...

  6. Diffusive, Structural, Optical, and Electrical Properties of Defects in Semiconductors

    CERN Multimedia

    Wagner, F E

    2002-01-01

    Electronic properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photoluminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect, that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness", the present approach is to use radioactive isotopes as a tracer. Moreover, the recoil energies involved in $\\beta$ and $\\gamma$-decays can be used to create intrinsic isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. The understanding and the co...

  7. Evolution of structure with Fe layer thickness in low dimensional Fe/Tb multilayered structures

    International Nuclear Information System (INIS)

    Harris, V.G.; Aylesworth, K.D.; Elam, W.T.; Koon, N.C.; Coehoorn, R.; Hoving, W.

    1992-01-01

    This paper reports on the atomic structure of a series of low-dimensional Fe/Tb multilayered structures which has been explored using a conversion-electron, extended x-ray absorption fine structure (EXAFS) technique. A structural transition from a close-packed amorphous structure to a body-centered crystalline structure is detected to occur over an Fe layer thickness range of 12.5 Angstrom to 15.0 Angstrom (Tb thickness is held constant at 4.5 Angstrom). Magnetic properties, specifically, magnetization, anisotropy field, and Kerr rotation angle, are measured and found to change significantly in response to this transition. Exploitation of the polarization properties of synchrotron radiation allowed for the description of the atomic structure both perpendicular and parallel to the sample plane

  8. Multilayered analog optical differentiating device: performance analysis on structural parameters.

    Science.gov (United States)

    Wu, Wenhui; Jiang, Wei; Yang, Jiang; Gong, Shaoxiang; Ma, Yungui

    2017-12-15

    Analogy optical devices (AODs) able to do mathematical computations have recently gained strong research interest for their potential applications as accelerating hardware in traditional electronic computers. The performance of these wavefront-processing devices is primarily decided by the accuracy of the angular spectral engineering. In this Letter, we show that the multilayer technique could be a promising method to flexibly design AODs according to the input wavefront conditions. As examples, various Si-SiO 2 -based multilayer films are designed that can precisely perform the second-order differentiation for the input wavefronts of different Fourier spectrum widths. The minimum number and thickness uncertainty of sublayers for the device performance are discussed. A technique by rescaling the Fourier spectrum intensity has been proposed in order to further improve the practical feasibility. These results are thought to be instrumental for the development of AODs.

  9. Structural and magnetic properties of granular CoPd multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Vivas, L.G.; Figueroa, A.I.; Bartolomé, F. [Instituto de Ciencia de Materiales de Aragón (ICMA), CSIC-Universidad de Zaragoza, Dept. de Física de la Materia Condensada, E-50009 Zaragoza (Spain); Rubín, J. [Instituto de Ciencia de Materiales de Aragón (ICMA), CSIC-Universidad de Zaragoza, Dept. de Ciencia y Tecnología de Materiales y Fluidos, E-50018 Zaragoza (Spain); García, L.M. [Instituto de Ciencia de Materiales de Aragón (ICMA), CSIC-Universidad de Zaragoza, Dept. de Física de la Materia Condensada, E-50009 Zaragoza (Spain); Deranlot, C.; Petroff, F. [Unité Mixte de Physique CNRS/Thales, F-91767 Palaiseau Cedex, France and Université Paris-Sud, F-191405 Orsay Cedex (France); Ruiz, L.; González-Calbet, J.M [Dept. de Química Inorgánica, Universidad Complutense de Madrid, E-28040 Madrid (Spain); Brookes, N.B.; Wilhelm, F.; Rogalev, A. [European Synchrotron Radiation Facility (ESRF), CS40220, F-38043 Grenoble Cedex 9 (France); Bartolomé, J. [Instituto de Ciencia de Materiales de Aragón (ICMA), CSIC-Universidad de Zaragoza, Dept. de Física de la Materia Condensada, E-50009 Zaragoza (Spain)

    2016-02-15

    Multilayers of bimetallic CoPd alloyed and assembled nanoparticles, prepared by room temperature sequential sputtering deposition on amorphous alumina, were studied by means of high-resolution transmission electron microscopy, x-ray diffraction, SQUID-based magnetometry and x-ray magnetic circular dichroism. Alloying between Co and Pd in these nanoparticles gives rise to a high perpendicular magnetic anisotropy. Their magnetic properties are temperature dependent: at low temperature, the multilayers are ferromagnetic with a high coercive field; at intermediate temperature the behavior is of a soft-ferromagnet, and at higher temperature, the perpendicular magnetic anisotropy in the nanoparticles disappears. The magnetic orbital moment to spin moment ratio is enhanced compared with Co bare nanoparticles and Co fcc bulk. - Highlights: • CoPd granular nanolayers show perpendicular magnetic anisotropy. • Three magnetic phases are detected: hard-ferro, soft-ferro and superparamagnetism. • The nanoparticles have Co-core and CoPd alloy shell morphology.

  10. Structural and magnetic properties of granular CoPd multilayers

    Science.gov (United States)

    Vivas, L. G.; Figueroa, A. I.; Bartolomé, F.; Rubín, J.; García, L. M.; Deranlot, C.; Petroff, F.; Ruiz, L.; González-Calbet, J. M.; Brookes, N. B.; Wilhelm, F.; Rogalev, A.; Bartolomé, J.

    2016-02-01

    Multilayers of bimetallic CoPd alloyed and assembled nanoparticles, prepared by room temperature sequential sputtering deposition on amorphous alumina, were studied by means of high-resolution transmission electron microscopy, x-ray diffraction, SQUID-based magnetometry and x-ray magnetic circular dichroism. Alloying between Co and Pd in these nanoparticles gives rise to a high perpendicular magnetic anisotropy. Their magnetic properties are temperature dependent: at low temperature, the multilayers are ferromagnetic with a high coercive field; at intermediate temperature the behavior is of a soft-ferromagnet, and at higher temperature, the perpendicular magnetic anisotropy in the nanoparticles disappears. The magnetic orbital moment to spin moment ratio is enhanced compared with Co bare nanoparticles and Co fcc bulk.

  11. Structural and magnetic properties of granular CoPd multilayers

    International Nuclear Information System (INIS)

    Vivas, L.G.; Figueroa, A.I.; Bartolomé, F.; Rubín, J.; García, L.M.; Deranlot, C.; Petroff, F.; Ruiz, L.; González-Calbet, J.M; Brookes, N.B.; Wilhelm, F.; Rogalev, A.; Bartolomé, J.

    2016-01-01

    Multilayers of bimetallic CoPd alloyed and assembled nanoparticles, prepared by room temperature sequential sputtering deposition on amorphous alumina, were studied by means of high-resolution transmission electron microscopy, x-ray diffraction, SQUID-based magnetometry and x-ray magnetic circular dichroism. Alloying between Co and Pd in these nanoparticles gives rise to a high perpendicular magnetic anisotropy. Their magnetic properties are temperature dependent: at low temperature, the multilayers are ferromagnetic with a high coercive field; at intermediate temperature the behavior is of a soft-ferromagnet, and at higher temperature, the perpendicular magnetic anisotropy in the nanoparticles disappears. The magnetic orbital moment to spin moment ratio is enhanced compared with Co bare nanoparticles and Co fcc bulk. - Highlights: • CoPd granular nanolayers show perpendicular magnetic anisotropy. • Three magnetic phases are detected: hard-ferro, soft-ferro and superparamagnetism. • The nanoparticles have Co-core and CoPd alloy shell morphology.

  12. New Insight into the Toughening Mechanisms of Seashell: From Arch Shape to Multilayer Structure

    Directory of Open Access Journals (Sweden)

    Quan Yuan

    2016-01-01

    Full Text Available A seashell is a closed three-dimensional curved surface formed by two symmetrical open shells. Three-point bending is performed on a pure aragonite straight beam (PASB model and a multilayer structure curved beam (MSCB model to elucidate the structure-property relationships of seashells. The integrity of the PASB is broken because of the introduction of a soft layer, but this drawback is compensated by the peculiar arch shape and the internal multilayer structure. The effective modulus, stiffness, and fracture energy of MSCB increase with an increase in volume fraction, aspect ratio of aragonite platelet, overlap ratio of hard layers, and ratio of the elastic modulus of the hard layer to the shear modulus of the soft layer. New design disciplines drawn from the MSCB model are peculiar arch shape, internal multilayer structure of larger volume fraction, and aspect ratio of hard layers and nanoscaled soft layers.

  13. Multilayer networks reveal the spatial structure of seed-dispersal interactions across the Great Rift landscapes.

    Science.gov (United States)

    Timóteo, Sérgio; Correia, Marta; Rodríguez-Echeverría, Susana; Freitas, Helena; Heleno, Ruben

    2018-01-10

    Species interaction networks are traditionally explored as discrete entities with well-defined spatial borders, an oversimplification likely impairing their applicability. Using a multilayer network approach, explicitly accounting for inter-habitat connectivity, we investigate the spatial structure of seed-dispersal networks across the Gorongosa National Park, Mozambique. We show that the overall seed-dispersal network is composed by spatially explicit communities of dispersers spanning across habitats, functionally linking the landscape mosaic. Inter-habitat connectivity determines spatial structure, which cannot be accurately described with standard monolayer approaches either splitting or merging habitats. Multilayer modularity cannot be predicted by null models randomizing either interactions within each habitat or those linking habitats; however, as habitat connectivity increases, random processes become more important for overall structure. The importance of dispersers for the overall network structure is captured by multilayer versatility but not by standard metrics. Highly versatile species disperse many plant species across multiple habitats, being critical to landscape functional cohesion.

  14. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

    Science.gov (United States)

    Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

    2017-02-01

    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

  15. Time-Dependent Thermally-Driven Interfacial Flows in Multilayered Fluid Structures

    Science.gov (United States)

    Haj-Hariri, Hossein; Borhan, A.

    1996-01-01

    A computational study of thermally-driven convection in multilayered fluid structures will be performed to examine the effect of interactions among deformable fluid-fluid interfaces on the structure of time-dependent flow in these systems. Multilayered fluid structures in two models configurations will be considered: the differentially heated rectangular cavity with a free surface, and the encapsulated cylindrical liquid bridge. An extension of a numerical method developed as part of our recent NASA Fluid Physics grant will be used to account for finite deformations of fluid-fluid interfaces.

  16. Characterization of strained semiconductor structures using transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Oezdoel, Vasfi Burak

    2011-08-15

    Today's state-of-the-art semiconductor electronic devices utilize the charge transport within very small volumes of the active device regions. The structural, chemical and optical material properties in these small dimensions can critically affect the performance of these devices. The present thesis is focused on the nanometer scale characterization of the strain state in semiconductor structures using transmission electron microscopy (TEM). Although high-resolution TEM has shown to provide the required accuracy at the nanometer scale, optimization of imaging conditions is necessary for accurate strain measurements. An alternative HRTEM method based on strain mapping on complex-valued exit face wave functions is developed to reduce the artifacts arising from objective lens aberrations. However, a much larger field of view is crucial for mapping strain in the active regions of complex structures like latest generation metal-oxide-semiconductor field-effect transistors (MOSFETs). To overcome this, a complementary approach based on electron holography is proposed. The technique relies on the reconstruction of the phase shifts in the diffracted electron beams from a focal series of dark-field images using recently developed exit-face wave function reconstruction algorithm. Combining high spatial resolution, better than 1 nm, with a field of view of about 1 {mu}m in each dimension, simultaneous strain measurements on the array of MOSFETs are possible. Owing to the much lower electron doses used in holography experiments when compared to conventional quantitative methods, the proposed approach allows to map compositional distribution in electron beam sensitive materials such as InGaN heterostructures without alteration of the original morphology and chemical composition. Moreover, dark-field holography experiments can be performed on thicker specimens than the ones required for high-resolution TEM, which in turn reduces the thin foil relaxation. (orig.)

  17. Semiconductor industry: a survey of structure, conduct, and performance

    International Nuclear Information System (INIS)

    Webbink, D.W.

    1977-01-01

    The study describes the structure, conduct, and performance of the semiconductor industry. The industry is characterized by a high rate of innovation and technological change, rapidly falling costs and prices, and rapidly rising sales in boom periods as well as large declines in sales in recession periods. These desirable performance characteristics take place in an industry that has moderately high domestic levels of concentration. However, there are many features that cause this industry to have behavior and performance that is markedly different from such highly concentrated industries as automobiles and steel. These features were investigated and are reported

  18. Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrid Structure

    KAUST Repository

    Sun, Jian

    2013-06-27

    In this dissertation, the extraordinary magnetoresistance (EMR) effect in semiconductor/metal hybrid structures is studied to improve the performance in sensing applications. Using two-dimensional finite element simulations, the geometric dependence of the output sensitivity, which is a more relevant parameter for EMR sensors than the magnetoresistance (MR), is studied. The results show that the optimal geometry in this case is different from the geometry reported before, where the MR ratio was optimized. A device consisting of a semiconductor bar with length/width ratio of 5~10 and having only 2 contacts is found to exhibit the highest sensitivity. A newly developed three-dimensional finite element model is employed to investigate parameters that have been neglected with the two dimensional simulations utilized so far, i.e., thickness of metal shunt and arbitrary semiconductor/metal interface. The simulations show the influence of those parameters on the sensitivity is up to 10 %. The model also enables exploring the EMR effect in planar magnetic fields. In case of a bar device, the sensitivity to planar fields is about 15 % to 20 % of the one to perpendicular fields. 5 A “top-contacted” structure is proposed to reduce the complexity of fabrication, where neither patterning of the semiconductor nor precise alignment is required. A comparison of the new structure with a conventionally fabricated device shows that a similar magnetic field resolution of 24 nT/√Hz is obtained. A new 3-contact device is developed improving the poor low-field sensitivity observed in conventional EMR devices, resulting from its parabolic magnetoresistance response. The 3-contact device provides a considerable boost of the low field response by combining the Hall effect with the EMR effect, resulting in an increase of the output sensitivity by 5 times at 0.01 T compared to a 2-contact device. The results of this dissertation provide new insights into the optimization of EMR devices

  19. X-ray propagation through a quasi-ordered multilayered structure ...

    African Journals Online (AJOL)

    We investigate the propagation of short wavelength transverse electric x-rays through a quasiordered (Fibonacci) atomically commensurate multilayered structure using a transfer matrix model which treats each atomic plane as a diffraction unit. The reflectance spectrum has a rich structure being dominated by peaks ...

  20. Structural and magnetic properties of Gd/Fe multilayers grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Kant, K. Mohan; Bahl, Christian Robert Haffenden; Pryds, Nini

    2010-01-01

    This work investigates the structural and the magnetic properties of Gd/Fe multilayered thin films grown by pulsed laser deposition onto Si (001) substrates at room temperature. he Fe layer thickness is varied from 70 to 150 nm and its effect on the structural and magnetic properties of Fe/Gd/Fe ...

  1. Damage assessment in multilayered MEMS structures under thermal fatigue

    Science.gov (United States)

    Maligno, A. R.; Whalley, D. C.; Silberschmidt, V. V.

    2011-07-01

    This paper reports on the application of a Physics of Failure (PoF) methodology to assessing the reliability of a micro electro mechanical system (MEMS). Numerical simulations, based on the finite element method (FEM) using a sub-domain approach was used to examine the damage onset due to temperature variations (e.g. yielding of metals which may lead to thermal fatigue). In this work remeshing techniques were employed in order to develop a damage tolerance approach based on the assumption that initial flaws exist in the multi-layered.

  2. Polar semiconductor heterojunction structure energy band diagram considerations

    International Nuclear Information System (INIS)

    Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Hao, Yilong

    2016-01-01

    The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density.

  3. Polar semiconductor heterojunction structure energy band diagram considerations

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Shuxun; Wen, Cheng P., E-mail: cpwen@ieee.org; Wang, Maojun; Hao, Yilong [Institute of Microelectronics, Peking University, Beijing (China)

    2016-03-28

    The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density.

  4. Structural and elastic properties of AIBIIIC 2 VI semiconductors

    Science.gov (United States)

    Kumar, V.; Singh, Bhanu P.

    2018-01-01

    The plane wave pseudo-potential method within density functional theory has been used to calculate the structural and elastic properties of AIBIIIC 2 VI semiconductors. The electronic band structure, density of states, lattice constants (a and c), internal parameter (u), tetragonal distortion (η), energy gap (Eg), and bond lengths of the A-C (dAC) and B-C (dBC) bonds in AIBIIIC 2 VI semiconductors have been calculated. The values of elastic constants (Cij), bulk modulus (B), shear modulus (G), Young's modulus (Y), Poisson's ratio (υ), Zener anisotropy factor (A), Debye temperature (ϴD) and G/B ratio have also been calculated. The values of all 15 parameters of CuTlS2 and CuTlSe2 compounds, and 8 parameters of 20 compounds of AIBIIIC 2 VI family, except AgInS2 and AgInSe2, have been calculated for the first time. Reasonably good agreement has been obtained between the calculated, reported and available experimental values.

  5. Quasiparticle semiconductor band structures including spin-orbit interactions.

    Science.gov (United States)

    Malone, Brad D; Cohen, Marvin L

    2013-03-13

    We present first-principles calculations of the quasiparticle band structure of the group IV materials Si and Ge and the group III-V compound semiconductors AlP, AlAs, AlSb, InP, InAs, InSb, GaP, GaAs and GaSb. Calculations are performed using the plane wave pseudopotential method and the 'one-shot' GW method, i.e. G(0)W(0). Quasiparticle band structures, augmented with the effects of spin-orbit, are obtained via a Wannier interpolation of the obtained quasiparticle energies and calculated spin-orbit matrix. Our calculations explicitly treat the shallow semicore states of In and Ga, which are known to be important in the description of the electronic properties, as valence states in the quasiparticle calculation. Our calculated quasiparticle energies, combining both the ab initio evaluation of the electron self-energy and the vector part of the pseudopotential representing the spin-orbit effects, are in generally very good agreement with experimental values. These calculations illustrate the predictive power of the methodology as applied to group IV and III-V semiconductors.

  6. High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayers

    International Nuclear Information System (INIS)

    Bhatt, Pramod; Ganeshan, V.; Reddy, V.R.; Chaudhari, S.M.

    2006-01-01

    High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayer (ML) up to 600 deg. C have been studied and reported in this paper. Ti/Ni multilayer samples having constant layer thicknesses of 50 A each are deposited on float glass and Si(1 1 1) substrates using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions at room temperatures. The micro-structural parameters and their evolution with temperature for as-deposited as well as annealed multilayer samples up to 600 deg. C in a step of 100 deg. C for 1 h are determined by using X-ray diffraction (XRD) and grazing incidence X-ray reflectivity techniques. The X-ray diffraction pattern recorded at 300 deg. C annealed multilayer sample shows interesting structural transformation (from crystalline to amorphous) because of the solid-state reaction (SSR) and subsequent re-crystallization at higher temperatures of annealing, particularly at ≥400 deg. C due to the formation of TiNi 3 and Ti 2 Ni alloy phases. Sample quality and surface morphology are examined by using atomic force microscopy (AFM) technique for both as-deposited as well as annealed multilayer samples. In addition to this, a temperature dependent dc resistivity measurement is also used to study the structural transformation and subsequent alloy phase formation due to annealing treatment. The corresponding magnetization behavior of multilayer samples after each stage of annealing has been investigated by using Magneto-Optical Kerr Effect (MOKE) technique and results are interpreted in terms of observed micro-structural changes

  7. Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

    International Nuclear Information System (INIS)

    Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

    2015-01-01

    Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

  8. Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    2003-11-25

    A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.

  9. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  10. Tunneling conductance in semiconductor-superconductor hybrid structures

    Science.gov (United States)

    Stenger, John; Stanescu, Tudor D.

    2017-12-01

    We study the differential conductance for charge tunneling into a semiconductor wire-superconductor hybrid structure, which is actively investigated as a possible scheme for realizing topological superconductivity and Majorana zero modes. The calculations are done based on a tight-binding model of the heterostructure using both a Blonder-Tinkham-Klapwijk approach and a Keldysh nonequilibrium Green's function method. The dependence of various tunneling conductance features on the coupling strength between the semiconductor and the superconductor, the tunnel barrier height, and temperature is systematically investigated. We find that treating the parent superconductor as an active component of the system, rather than a passive source of Cooper pairs, has qualitative consequences regarding the low-energy behavior of the differential conductance. In particular, the presence of subgap states in the parent superconductor, due to disorder and finite magnetic fields, leads to characteristic particle-hole asymmetric features and to the breakdown of the quantization of the zero-bias peak associated with the presence of Majorana zero modes localized at the ends of the wire. The implications of these findings for the effort toward the realization of Majorana bound states with true non-Abelian properties are discussed.

  11. 3D Defect Localization on Exothermic Faults within Multi-Layered Structures Using Lock-In Thermography: An Experimental and Numerical Approach.

    Science.gov (United States)

    Bae, Ji Yong; Lee, Kye-Sung; Hur, Hwan; Nam, Ki-Hwan; Hong, Suk-Ju; Lee, Ah-Yeong; Chang, Ki Soo; Kim, Geon-Hee; Kim, Ghiseok

    2017-10-13

    Micro-electronic devices are increasingly incorporating miniature multi-layered integrated architectures. However, the localization of faults in three-dimensional structure remains challenging. This study involved the experimental and numerical estimation of the depth of a thermally active heating source buried in multi-layered silicon wafer architecture by using both phase information from an infrared microscopy and finite element simulation. Infrared images were acquired and real-time processed by a lock-in method. It is well known that the lock-in method can increasingly improve detection performance by enhancing the spatial and thermal resolution of measurements. Operational principle of the lock-in method is discussed, and it is represented that phase shift of the thermal emission from a silicon wafer stacked heat source chip (SSHSC) specimen can provide good metrics for the depth of the heat source buried in SSHSCs. Depth was also estimated by analyzing the transient thermal responses using the coupled electro-thermal simulations. Furthermore, the effects of the volumetric heat source configuration mimicking the 3D through silicon via integration package were investigated. Both the infrared microscopic imaging with the lock-in method and FE simulation were potentially useful for 3D isolation of exothermic faults and their depth estimation for multi-layered structures, especially in packaged semiconductors.

  12. Structure evolution and magnetic properties of annealed nanoscale Gd/Ti multilayers

    Directory of Open Access Journals (Sweden)

    Larrañaga A.

    2013-01-01

    Full Text Available The structure and magnetic properties were comparatively analyzed for [Gd/Ti]n multilayers with Gd layer thickness of 1.5 to 12 nm. Multilayers were deposited by sputtering technique at room temperature and annealed for the temperatures up to 400 ºC. It was observed that the samples are highly textured in a different way depending on the Gd layer thickness and annealing temperature. It was found that the heat treatment practically does not change the Gd grain size. The lattice parameters obtained from X-ray results change significantly only for [Gd(1.5nm/Ti]50 multilayers, but their values remain higher than for the bulk Gd. The initial slope of the temperature dependence of magnetization near Curie temperature becomes steeper and Curie temperature increases upon annealing. Curie temperature variation can be understood by taking into account both relaxation of the lattice imperfections and change in lattice constants.

  13. Magnetic properties and structure of FePt/FeMn multilayers

    International Nuclear Information System (INIS)

    Phuoc, Nguyen N.; Suzuki, Takao

    2007-01-01

    A systematic study of the magnetic properties by ion beam sputter-deposition system, was conducted in conjunction with the structure of FePt/FeMn multilayers fabricated onto MgO(0 0 1) substrates. Both parallel and perpendicular exchange biases were observed in the multilayers and were found to decrease drastically, as the deposition temperature is higher than 350 deg. C, which is evidently due to the interdiffusion at the interface. The thickness dependence study shows that the perpendicular magnetic anisotropy observed in the multilayers originates from surface anisotropy, being consistent with the decrease of perpendicular magnetic anisotropy as the deposition temperature is increased. The difference between parallel and perpendicular blocking temperatures that was clearly observed, is possibly due to the spin canting out of plane at the interface

  14. Multilayered Word Structure Model for Assessing Spelling of Finnish Children in Shallow Orthography

    Science.gov (United States)

    Kulju, Pirjo; Mäkinen, Marita

    2017-01-01

    This study explores Finnish children's word-level spelling by applying a linguistically based multilayered word structure model for assessing spelling performance. The model contributes to the analytical qualitative assessment approach in order to identify children's spelling performance for enhancing writing skills. The children (N = 105)…

  15. Multilayered supermirror structures for hard x-ray synchrotron and astrophysics instrumentation

    DEFF Research Database (Denmark)

    Joensen, K. D.; Hoeghoej, P.; Christensen, Finn Erland

    1993-01-01

    By varying the thickness of the layers in a multilayer down through the structure, it is possible to produce wide-band reflectors. We report measurements and modeling of the reflectivity of Ni/C, Mo/Si and W/Si supermirrors, at energies ranging from 8 to 130 keV, and discuss the performance of tw...

  16. Development of a low activation concrete shielding wall by multi-layered structure for a fusion reactor

    International Nuclear Information System (INIS)

    Sato, Satoshi; Maegawa, Toshio; Yoshimatsu, Kenji; Sato, Koichi; Nonaka, Akira; Takakura, Kosuke; Ochiai, Kentaro; Konno, Chikara

    2011-01-01

    A multi-layered concrete structure has been developed to reduce induced activity in the shielding for neutron generating facilities such as a fusion reactor. The multi-layered concrete structure is composed of: (1) an inner low activation concrete, (2) a boron-doped low activation concrete as the second layer, and (3) ordinary concrete as the outer layer of the neutron shield. With the multi-layered concrete structure the volume of boron is drastically decreased compared to a monolithic boron-doped concrete. A 14 MeV neutron shielding experiment with multi-layered concrete structure mockups was performed at FNS and several reaction rates and induced activity in the mockups were measured. This demonstrated that the multi-layered concrete effectively reduced low energy neutrons and induced activity.

  17. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S M

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed by a

  18. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S.M.

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

  19. Surface plasmon polariton amplification in semiconductor-graphene-dielectric structure

    Energy Technology Data Exchange (ETDEWEB)

    Dadoenkova, Yuliya S. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Novgorod State University, Veliky Novgorod (Russian Federation); Donetsk Institute for Physics and Technology, Donetsk (Ukraine); Moiseev, Sergey G. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Ulyanovsk (Russian Federation); Abramov, Aleksei S. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Kadochkin, Aleksei S.; Zolotovskii, Igor O. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Institute of Nanotechnologies of Microelectronics of the Russian Academy of Sciences, 32A Leninskiy Prosp., 119991, Moscow (Russian Federation); Fotiadi, Andrei A. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Universite de Mons (Belgium)

    2017-05-15

    A mechanism of amplification of surface plasmon polaritons due to the transfer of electromagnetic energy from a drift current wave into a far-infrared surface wave propagating along a semiconductor-dielectric boundary in waveguide geometry is proposed. A necessary condition of the interaction of these waves is phase matching condition, i. e., when the phase velocity of the surface wave approaches the drift velocity of charge carriers. It is shown that in the spectral region of the surface plasmon polariton slowing-down its amplification coefficient can reach values substantially exceeding the ohmic loss coefficient of the surface wave in the structure. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Development of microwave amplifier based on gallium nitride semiconductor structures

    International Nuclear Information System (INIS)

    Pavlov, D.Yi.; Prokopenko, O.V.; Tsvyirko, Yu.A.; Pavlov, Yi.L.

    2014-01-01

    Microwave properties of microwave amplifier based on gallium nitride (GN) semiconductor structures has been calculated numerically. We proposed the method of numerical calculation of device. This method is accurately sets the value of its characteristics depending on the elements that are used in design of amplifier. It is shown that the device based on GN HEMT-transistors could have amplification factor about 50 dB, while its sizes are 27x18x5.5 mm 3 . Also was provided the absolute stability an amplifier in the whole operating frequency range. It is quite important when using this type of amplifiers in different conditions of exploitation and various fields of use the radioelectronic equipment

  1. Low Dimensional Semiconductor Structures Characterization, Modeling and Applications

    CERN Document Server

    Horing, Norman

    2013-01-01

    Starting with the first transistor in 1949, the world has experienced a technological revolution which has permeated most aspects of modern life, particularly over the last generation. Yet another such revolution looms up before us with the newly developed capability to control matter on the nanometer scale. A truly extraordinary research effort, by scientists, engineers, technologists of all disciplines, in nations large and small throughout the world, is directed and vigorously pressed to develop a full understanding of the properties of matter at the nanoscale and its possible applications, to bring to fruition the promise of nanostructures to introduce a new generation of electronic and optical devices. The physics of low dimensional semiconductor structures, including heterostructures, superlattices, quantum wells, wires and dots is reviewed and their modeling is discussed in detail. The truly exceptional material, Graphene, is reviewed; its functionalization and Van der Waals interactions are included h...

  2. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    International Nuclear Information System (INIS)

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  3. Dephasing in semiconductor-superconductor structures by coupling to a voltage probe

    DEFF Research Database (Denmark)

    Mortensen, Niels Asger; Jauho, Antti-Pekka; Flensberg, Karsten

    2000-01-01

    We study dephasing in semiconductor-superconductor structures caused by coupling to a voltage probe. We consider structures where the semiconductor consists of two scattering regions between which partial dephasing is possible. As a particular example we consider a situation with a double barrier...

  4. Deep Defect Detection within Thick Multilayer Aircraft Structures Containing Steel Fasteners Using a Giant-Magneto Resistive (GMR) Sensor (Preprint)

    National Research Council Canada - National Science Library

    Ko, Ray T; Steffes, Gary J

    2007-01-01

    Defect detection within thick multilayer structures containing steel fasteners is a challenging task in eddy current testing due to the magnetic permeability of the fasteners and overall thickness of the structure...

  5. Spherical distribution structure of the semiconductor laser diode stack for pumping

    International Nuclear Information System (INIS)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

  6. Structure and magnetism in Co/X, Fe/Si, and Fe/(FeSi) multilayers

    Science.gov (United States)

    Franklin, Michael Ray

    Previous studies have shown that magnetic behavior in multilayers formed by repeating a bilayer unit comprised of a ferromagnetic layer and a non-magnetic spacer layer can be affected by small structural differences. For example, a macroscopic property such as giant magnetoresistance (GMR) is believed to depend significantly upon interfacial roughness. In this study, several complimentary structural probes were used to carefully characterize the structure of several sputtered multilayer systems-Co/Ag, Co/Cu, Co/Mo, Fe/Si, and Fe//[FeSi/]. X-ray diffraction (XRD) studies were used to examine the long-range structural order of the multilayers perpendicular to the plane of the layers. Transmission electron diffraction (TED) studies were used to probe the long-range order parallel to the layer plane. X-ray Absorption Fine Structure (XAFS) studies were used to determine the average local structural environment of the ferromagnetic atoms. For the Co/X systems, a simple correlation between crystal structure and saturation magnetization is discovered for the Co/Mo system. For the Fe/X systems, direct evidence of an Fe-silicide is found for the /[FeSi/] spacer layer but not for the Si spacer layer. Additionally, differences were observed in the magnetic behavior between the Fe in the nominally pure Fe layer and the Fe contained in the /[FeSi/] spacer layers.

  7. Artificially Structured Semiconductors to Model Novel Quantum Phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Pinczuk, Aron [Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics; Wind, Shalom J. [Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics

    2018-01-13

    Award Period: September 1st, 2013 through February 15th, 2017 Submitted to the USDOE Office of Basic Energy Sciences By Aron Pinczuk and Shalom J. Wind Department of Applied Physics and Applied Mathematics Columbia University New York, NY 10027 January 2017 Award # DE-SC0010695 ABSTRACT Research in this project seeks to design, create and study a class of tunable artificial quantum structures in order to extend the range and scope of new and exciting physical phenomena and to explore the potential for new applications. Advanced nanofabrication was used to create an external potential landscape that acts as a lattice of confinement sites for electrons (and/or holes) in a two-dimensional electron gas in a high perfection semiconductor in such a manner that quantum interactions between different sites dictate the significant physics. Our current focus is on ‘artificial graphene’ (AG) in which a set of quantum dots (or sites) are patterned in a honeycomb lattice. The combination of leading edge nanofabrication with ultra-pure semiconductor materials in this project extends the frontier for small period, low-disorder AG systems, enabling the exploration of graphene physics in a semiconductor platform. TECHNICAL DESCRIPTION Contemporary condensed matter science has entered an era of discovery of new low-dimensional materials, such as graphene and other atomically thin materials, that exhibit exciting new physical phenomena that were previously inaccessible. Concurrent with the discovery and development of these new materials are impressive advancements in nanofabrication, which offer an ever-expanding toolbox for creating a myriad of high quality patterns at nanoscale dimensions. This project started about four years ago. Among its major achievements are the realizations of very small period artificial lattices with honeycomb topology in GaAs quantum wells. In our most recent work the periods of the ‘artificial graphene’ (AG) lattices extend down to 40 nm. These

  8. Fine structure of the exciton electroabsorption in semiconductor superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Monozon, B.S., E-mail: borismonozon@mail.ru [Physics Department, Marine Technical University, 3 Lotsmanskaya Str., 190008 St.Petersburg (Russian Federation); Schmelcher, P. [Zentrum für Optische Quantentechnologien, The Hamburg Centre for Ultrafast Imaging, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg (Germany)

    2017-02-15

    Wannier-Mott excitons in a semiconductor layered superlattice (SL) are investigated analytically for the case that the period of the superlattice is much smaller than the 2D exciton Bohr radius. Additionally we assume the presence of a longitudinal external static electric field directed parallel to the SL axis. The exciton states and the optical absorption coefficient are derived in the tight-binding and adiabatic approximations. Strong and weak electric fields providing spatially localized and extended electron and hole states, respectively, are studied. The dependencies of the exciton states and the exciton absorption spectrum on the SL parameters and the electric field strength are presented in an explicit form. We focus on the fine structure of the ground quasi-2D exciton level formed by the series of closely spaced energy levels adjacent from the high frequencies. These levels are related to the adiabatically slow relative exciton longitudinal motion governed by the potential formed by the in-plane exciton state. It is shown that the external electric fields compress the fine structure energy levels, decrease the intensities of the corresponding optical peaks and increase the exciton binding energy. A possible experimental study of the fine structure of the exciton electroabsorption is discussed.

  9. Interpretation of interfacial structures in X-ray multilayers by TEM Fresnel fringe effects

    OpenAIRE

    Nguyen, Tai D.; O'Keefe, Michael A.; Kilaas, Roar; Gronsky, Ronald; Kortright, Jeffrey B.

    1991-01-01

    Assessment of interfacial structures from high-resolution TEM images of cross-sectional specimens is difficult due to Fresnel fringe effects producing different apparent structures in the images. The effects of these fringes have been commonly over-looked in efforts of making quantitative interpretation of interfacial profiles. In this report, we present the observations of the Fresnel fringes in nanometer period Mo/Si, W/C, and WC/C multilayers in through-focus-series TEM images. Calculation...

  10. Evaluation of resonant tunneling transmission coefficient from multilayer structures GaAlAs/GaAs

    Directory of Open Access Journals (Sweden)

    L. Moghaddasi

    2003-12-01

    Full Text Available   A theoretical study of resonant tunneling in multilayered GaAlAs/GaAs structures are presented. The spectrum of resonant energies and its dependence on the barrier structure are analyzed from calculated profiles of barrier transparency versus energy, and from current voltage characteristics computed at selected temperatures and Fermi levels. The present formalism is based on the effective mass approximation and results are via direct numerical evaluations.

  11. Surface electron structure of short-period semiconductor superlattice

    International Nuclear Information System (INIS)

    Bartos, I.; Czech Academy Science, Prague,; Strasser, T.; Schattke, W.

    2004-01-01

    Full text: Semiconductor superlattices represent man-made crystals with unique physical properties. By means of the directed layer-by-layer molecular epitaxy growth their electric properties can be tailored (band structure engineering). Longer translational periodicity in the growth direction is responsible for opening of new electron energy gaps (minigaps) with surface states and resonances localized at superlattice surfaces. Similarly as for the electron structure of the bulk, a procedure enabling to modify the surface electron structure of superlattices is desirable. Short-period superlattice (GaAs) 2 (AlAs) 2 with unreconstructed (100) surface is investigated in detail. Theoretical description in terms of full eigenfunctions of individual components has to be used. The changes of electron surface state energies governed by the termination of a periodic crystalline potential, predicted on simple models, are confirmed for this system. Large surface state shifts are found in the lowest minigap of the superlattice when this is terminated in four different topmost layer configurations. The changes should be observable in angle resolved photoelectron spectroscopy as demonstrated in calculations based on the one step model of photoemission. Surface state in the center of the two dimensional Brillouin zone moves from the bottom of the minigap (for the superlattice terminated by two bilayers of GaAs) to its top (for the superlattice terminated by two bilayers of AlAs) where it becomes a resonance. No surface state/resonance is found for a termination with one bilayer of AlAs. The surface state bands behave similarly in the corresponding gaps of the k-resolved section of the electron band structure. The molecular beam epitaxy, which enables to terminate the superlattice growth with atomic layer precision, provides a way of tuning the superlattice surface electron structure by purely geometrical means. The work was supported by the Grant Agency of the Academy of Sciences

  12. Multi-layer composite structure covered polytetrafluoroethylene for visible-infrared-radar spectral Compatibility

    Science.gov (United States)

    Qi, Dong; Cheng, Yongzhi; Wang, Xian; Wang, Fang; Li, Bowen; Gong, Rongzhou

    2017-12-01

    In this paper, a polytetrafluoroethylene (PTFE) top-covered multi-layer composite structure PTFE/H s/(Ge/ZnS)3 (H s represents the surface layer ZnS with various thicknesses) for spectral compatibility is proposed and investigated theoretically and experimentally. A substantial decline of glossiness from over 200 Gs to 74.2 Gs could be realized, due to high roughness and interface reflection of the 800 nm PTFE protection layer. In addition, similar to the structure of H s/(Ge/ZnS)3, the designed structure with a certain color exhibits ultra-low emissivity of average 0.196 at 8-14 µm and highly transparent performance of 96.45% in the radar frequency range of 2-18 GHz. Our design will provide an important reference for the practical applications of the spectral compatible multilayer films.

  13. A method of producing a multilayer barrier structure for a solid oxide fuel cell

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention provides a method of producing a multilayer barrier structure for a solid oxide cell stack, comprising the steps of: - providing a metal interconnect, wherein the metal interconnect is a ferritic stainless steel layer; - applying a first metal oxide layer on said metal...... oxide; and - reacting the metal oxide in said first metal oxide layer with the metal of said metal interconnect during the SOC-stack initialisation, and a solid oxide stack comprising an anode contact layer and support structure, an anode layer, an electrolyte layer, a cathode layer, a cathode contact...... layer, a metallic interconnect, and a multilayer barrier structure which is obtainable by the above method and through an initialisation step, which is carried out under controlled conditions for atmosphere composition and current load, which depends on the layer composition facilitating the formation...

  14. Structural study of multilayered vanadium/nickel superlattices

    International Nuclear Information System (INIS)

    Homma, H.; Lepetre, Y.; Murduck, J.M.; Schuller, I.K.; Majkrzak, C.F.

    1985-07-01

    We have studied the microstructure of V/Ni metallic superlattice, using x-ray and neutron diffraction. We find a sharp and broad rocking curves around the first-order Bragg peak, and attribute them to a columnar structure which gives rise to two modulation structures; one the ordinary layered structure within the columns and the other the averaged modulation structure which produces the sharp rocking peak

  15. Magnetic Properties and Structural Study of Ni-Co/Cu Multilayers Prepared by Electrodeposition Method

    Directory of Open Access Journals (Sweden)

    M. Jafari Fesharaki

    2015-07-01

    Full Text Available Ni-Co/Cu multilayers have been grown by electrodeposition method from a single electrolyte (based on Ni(SO4.6H2O, Co(SO4.7H2O, Cu(SO4 and H3BO3 using galvanostatic control on titanium sublayers. The X-ray diffraction (XRD patterns confirmed the multilayered structure with the nanometer thicknesses. Also, electron diffraction x-ray (EDX  analysis confirmed the purity of deposited samples. The morphology of the samples was estimated by scanning electron microscope (SEM. Magnetoresistance (MR measurements were carried out at room temperature for the Ni-Co/Cu multilayers by measuring the resistivity in a magnetic fields varying between ±6kOe as a function of the Ni-Co and Cu layer thicknesses; (1 dCu(nm 4 and 3 dNi-Cu(nm 5. The Maximum value of giant magnetoresistance (GMR was obtained when the Ni-Co and Cu thicknesses were 4.0nm and 4.0nm respectively. The hysteresis loop of the samples at room temperature was studied using an alternating gradient force magnetometer (AGFM. Finally, the temperature dependence of magnetization for Ni-Co/Cu multilayers; (dNi-Cu(4nm/dCu(2nm and dNi-Cu(3nm/dCu(3nm measured by Faraday balance and decreasing the magnetization with increasing the temperature discussed according to electron scattering due to spin fluctuation.

  16. Three-dimensional cell manipulation and patterning using dielectrophoresis via a multi-layer scaffold structure.

    Science.gov (United States)

    Chu, H K; Huan, Z; Mills, J K; Yang, J; Sun, D

    2015-02-07

    Cell manipulation is imperative to the areas of cellular biology and tissue engineering, providing them a useful tool for patterning cells into cellular patterns for different analyses and applications. This paper presents a novel approach to perform three-dimensional (3D) cell manipulation and patterning with a multi-layer engineered scaffold. This scaffold structure employed dielectrophoresis as the non-contact mechanism to manipulate cells in the 3D domain. Through establishing electric fields via this multi-layer structure, the cells in the medium became polarized and were attracted towards the interior part of the structure, forming 3D cellular patterns. Experiments were conducted to evaluate the manipulation and the patterning processes with the proposed structure. Results show that with the presence of a voltage input, this multi-layer structure was capable of manipulating different types of biological cells examined through dielectrophoresis, enabling automatic cell patterning in the time-scale of minutes. The effects of the voltage input on the resultant cellular pattern were examined and discussed. Viability test was performed after the patterning operation and the results confirmed that majority of the cells remained viable. After 7 days of culture, 3D cellular patterns were observed through SEM. The results suggest that this scaffold and its automated dielectrophoresis-based patterning mechanism can be used to construct artificial tissues for various tissue engineering applications.

  17. Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Usanov, D. A., E-mail: UsanovDA@info.sgu.ru [Chernyshevsky National Research State University (Russian Federation); Nikitov, S. A. [Russian Academy of Sciences, Kotelnikov Institute of Radio Engineering and Electronics (Russian Federation); Skripal, A. V.; Ponomarev, D. V.; Latysheva, E. V. [Chernyshevsky National Research State University (Russian Federation)

    2016-12-15

    A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n{sup +} layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.

  18. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    International Nuclear Information System (INIS)

    Stephan, Christiane

    2011-01-01

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB III C VI 2 (B III = In, Ga and C VI = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB III C VI 2 compound semiconductors. The study is done on reference powder samples with well determined chemical composition and using advanced diffraction techniques

  19. Quantitative characterization of semiconductor structures with a scanning microwave microscope.

    Science.gov (United States)

    Korolyov, S A; Reznik, A N

    2018-02-01

    In this work, our earlier method for measuring resistance R sh of semiconductor films with a near-field scanning microwave microscope [A. N. Reznik and S. A. Korolyov, J. Appl. Phys. 119, 094504 (2016)] is studied in a 0.1 kΩ/sq microscope model in the form of a monopole or dipole antenna interacting with an arbitrary layered structure. The model fitting parameters are determined from the data yielded by calibration measurements on a system of etalon samples. The performance of the method was analyzed experimentally, using strip-probe and coaxial-probe microscopes in the frequency range of 1-3 GHz. For test structures, we used doped GaN films on the Al 2 O 3 substrate and also transistor structures based on the AlGaN/GaN heterojunction and AlGaAs/GaAs/InGaAs/GaAs/AlGaAs quantum well with a conducting channel. The obtained microwave microscope data were compared with the results of measurements by the van der Pauw method. At the first stage of the experiment, the calibration etalons were bulk homogeneous samples with different permittivity/conductivity values. In this case, satisfactory agreement between the microscope and the van der Pauw data was obtained with a strip probe on all tested samples in the entire range of R sh . With a coaxial probe, such accordance was observed only in high-ohmic samples with R sh > 1 kΩ/sq. The use of GaN film structures as a calibration system helped to increase the accuracy of the coaxial-probe-aided measurement of R sh to a level of ∼10%.

  20. Graphene-insulator-semiconductor capacitors as superior test structures for photoelectric determination of semiconductor devices band diagrams

    Directory of Open Access Journals (Sweden)

    K. Piskorski

    2018-05-01

    Full Text Available We report on the advantages of using Graphene-Insulator-Semiconductor (GIS instead of Metal-Insulator-Semiconductor (MIS structures in reliable and precise photoelectric determination of the band alignment at the semiconductor-insulator interface and of the insulator band gap determination. Due to the high transparency to light of the graphene gate in GIS structures large photocurrents due to emission of both electrons and holes from the substrate and negligible photocurrents due to emission of carriers from the gate can be obtained, which allows reliable determination of barrier heights for both electrons, Ee and holes, Eh from the semiconductor substrate. Knowing the values of both Ee and Eh allows direct determination of the insulator band gap EG(I. Photoelectric measurements were made of a series of Graphene-SiO2-Si structures and an example is shown of the results obtained in sequential measurements of the same structure giving the following barrier height values: Ee = 4.34 ± 0.01 eV and Eh = 4.70 ± 0.03 eV. Based on this result and results obtained for other structures in the series we conservatively estimate the maximum uncertainty of both barrier heights estimations at ± 0.05 eV. This sets the SiO2 band gap estimation at EG(I = 7.92 ± 0.1 eV. It is shown that widely different SiO2 band gap values were found by research groups using various determination methods. We hypothesize that these differences are due to different sensitivities of measurement methods used to the existence of the SiO2 valence band tail.

  1. Graphene-insulator-semiconductor capacitors as superior test structures for photoelectric determination of semiconductor devices band diagrams

    Science.gov (United States)

    Piskorski, K.; Passi, V.; Ruhkopf, J.; Lemme, M. C.; Przewlocki, H. M.

    2018-05-01

    We report on the advantages of using Graphene-Insulator-Semiconductor (GIS) instead of Metal-Insulator-Semiconductor (MIS) structures in reliable and precise photoelectric determination of the band alignment at the semiconductor-insulator interface and of the insulator band gap determination. Due to the high transparency to light of the graphene gate in GIS structures large photocurrents due to emission of both electrons and holes from the substrate and negligible photocurrents due to emission of carriers from the gate can be obtained, which allows reliable determination of barrier heights for both electrons, Ee and holes, Eh from the semiconductor substrate. Knowing the values of both Ee and Eh allows direct determination of the insulator band gap EG(I). Photoelectric measurements were made of a series of Graphene-SiO2-Si structures and an example is shown of the results obtained in sequential measurements of the same structure giving the following barrier height values: Ee = 4.34 ± 0.01 eV and Eh = 4.70 ± 0.03 eV. Based on this result and results obtained for other structures in the series we conservatively estimate the maximum uncertainty of both barrier heights estimations at ± 0.05 eV. This sets the SiO2 band gap estimation at EG(I) = 7.92 ± 0.1 eV. It is shown that widely different SiO2 band gap values were found by research groups using various determination methods. We hypothesize that these differences are due to different sensitivities of measurement methods used to the existence of the SiO2 valence band tail.

  2. Structure of a Multilayer Nanofilm To Increase the Encapsulation Efficiency of Basic Fibroblast Growth Factor.

    Science.gov (United States)

    Han, Uiyoung; Hong, Jinkee

    2018-03-05

    In this study, we established the structure of a multilayer nanofilm that more efficiently encapsulates basic fibroblast growth factor (bFGF). First, a positively charged layer material was selected from biocompatible polymers such as collagen (Col), poly(beta-amino ester) (Poly2), and chitosan (Chi), while considering the film thickness. We then investigated the change in bFGF encapsulation efficiency when the multilayer structure was changed from a tetralayer to a trilayer. As a result, we obtained a highly improved bFGF encapsulation efficiency in the nanofilm using a positively charged layer formed by a blend of Col and Poly2 and a negatively charged poly(acrylic acid) (PAA) layer within a trilayered structure. In particular, we found that a significant amount of adsorbed bFGF was desorbed again during the film fabrication process of a tetralayered nanofilm. In the conventional nanofilm, bFGF was regarded as a polycation and formed a multilayer nanofilm that was composed of a tetralayered structure and was represented as (polycation/polyanion/bFGF/polyanion) n where n = number of repeated tetralayers. Here, we suggested that bFGF should not be considered a polycation, rather it should be considered as a small quantity of molecule that exists between the polyanion and polycation layers. In this case, the nanofilm is composed of repeating units of (polycation/polyanion/bFGF/polycation/polyanion), because the amount of adsorbed bFGF is considerably lower than that of other building blocks.

  3. Fatigue crack growth monitoring in multi-layered structures using guided ultrasonic waves

    International Nuclear Information System (INIS)

    Kostson, E; Fromme, P

    2009-01-01

    This contribution investigates the application of low frequency guided ultrasonic waves for monitoring fatigue crack growth at fastener holes in the 2nd layer of multi-layered plate structures, a common problem in aerospace industry. The model multi-layered structure investigated consists of two aluminum plate-strips adhesively bonded using a structural paste adhesive. Guided ultrasonic waves were excited using multiple piezoelectric discs bonded to the surface of the multi-layered structure. The wave propagation in the tensile specimen was measured using a laser interferometer and compared to numerical simulations. Thickness and width mode shapes of the excited flexural waves were identified from Semi-Analytical Finite Element (SAFE) calculations. Experiments and 3D Finite Element (FE) simulations show a change in the scattered field around fastener holes caused by a defect in the 2nd layer. The amplitude of the guided ultrasonic wave was monitored during fatigue experiments at a single point. The measured changes in the amplitude of the ultrasonic signal due to fatigue crack growth agree well with FE simulations.

  4. Method for reinforcing threads in multilayer composite tubes and cylindrical structures

    International Nuclear Information System (INIS)

    Romanoski, G.R.; Burchell, T.D.

    1996-01-01

    Multilayer techniques such as: tape wrapping, braiding, and filament winding represent versatile and economical routes for fabricating composite tubes and cylindrical structures. However, multilayer architectures lack the radial reinforcement required to retain threads when the desired means of connection or closure is a threaded joint. This issue was addressed in the development of a filament wound, carbon-carbon composite impact shell for the NASA radioisotope thermoelectric generator. The problem of poor thread shear strength was solved by incorporating a number of radial elements of triangular geometry around the circumference of the thread for the full length of thread engagement. The radial elements significantly increased the shear strength of the threaded joint by transmitting the applied force to the balance of composite structure. This approach is also applicable to ceramic composites

  5. Properties of Exchange Coupled All-garnet Magneto-Optic Thin Film Multilayer Structures

    Directory of Open Access Journals (Sweden)

    Mohammad Nur-E-Alam

    2015-04-01

    Full Text Available The effects of exchange coupling on magnetic switching properties of all-garnet multilayer thin film structures are investigated. All-garnet structures are fabricated by sandwiching a magneto-soft material of composition type Bi1.8Lu1.2Fe3.6Al1.4O12 or Bi3Fe5O12:Dy2O3 in between two magneto-hard garnet material layers of composition type Bi2Dy1Fe4Ga1O12 or Bi2Dy1Fe4Ga1O12:Bi2O3. The fabricated RF magnetron sputtered exchange-coupled all-garnet multilayers demonstrate a very attractive combination of magnetic properties, and are of interest for emerging applications in optical sensors and isolators, ultrafast nanophotonics and magneto-plasmonics. An unconventional type of magnetic hysteresis behavior not observed previously in magnetic garnet thin films is reported and discussed.

  6. X-ray diffuse scattering effects from Coulomb-type defects in multilayered structures

    International Nuclear Information System (INIS)

    Olikhovskii, S.I.; Molodkin, V.B.; Skakunova, E.S.; Kislovskii, E.N.; Fodchuk, I.M.

    2009-01-01

    The theoretical X-ray diffraction model starting from Takagi-Taupin equation has been developed for the description of coherent and diffuse components of the rocking curve (RC) measured from the multilayered crystal structure with randomly distributed Coulomb-type defects in all the layers and substrate. The model describes both diffuse scattering (DS) intensity distribution and influence of DS on attenuation and angular redistribution of the coherent X-ray scattering intensity. By analyzing the total measured RC with using the proposed diffraction model, the chemical compositions, strains, and characteristics of dislocation loops in layers and substrate of the multilayered structure with InGaAsN/GaAs single quantum well have been determined. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  7. Properties of Exchange Coupled All-garnet Magneto-Optic Thin Film Multilayer Structures

    Science.gov (United States)

    Nur-E-Alam, Mohammad; Vasiliev, Mikhail; Kotov, Viacheslav A.; Balabanov, Dmitry; Akimov, Ilya; Alameh, Kamal

    2015-01-01

    The effects of exchange coupling on magnetic switching properties of all-garnet multilayer thin film structures are investigated. All-garnet structures are fabricated by sandwiching a magneto-soft material of composition type Bi1.8Lu1.2Fe3.6Al1.4O12 or Bi3Fe5O12:Dy2O3 in between two magneto-hard garnet material layers of composition type Bi2Dy1Fe4Ga1O12 or Bi2Dy1Fe4Ga1O12:Bi2O3. The fabricated RF magnetron sputtered exchange-coupled all-garnet multilayers demonstrate a very attractive combination of magnetic properties, and are of interest for emerging applications in optical sensors and isolators, ultrafast nanophotonics and magneto-plasmonics. An unconventional type of magnetic hysteresis behavior not observed previously in magnetic garnet thin films is reported and discussed. PMID:28788043

  8. Magnetoelectric Effect in Gallium Arsenide-Nickel-Tin-Nickel Multilayer Structures

    Science.gov (United States)

    Filippov, D. A.; Tikhonov, A. A.; Laletin, V. M.; Firsova, T. O.; Manicheva, I. N.

    2018-02-01

    Experimental data have been presented for the magnetoelectric effect in nickel-tin-nickel multilayer structures grown on a GaAs substrate by cathodic electrodeposition. The method of fabricating these structures has been described, and the frequency dependence of the effect has been demonstrated. It has been shown that tin used as an intermediate layer reduces mechanical stresses due to the phase mismatch at the Ni-GaAs interface and, thus, makes it possible to grow good structures with a 70-μm-thick Ni layer. The grown structures offer good adhesion between layers and a high Q factor.

  9. Unified approach for calculating the number of confined modes in multilayered waveguiding structures

    Science.gov (United States)

    Ruschin, S.; Griffel, G.; Hardy, A.; Croitoru, N.

    1986-01-01

    A general formalism is developed in order to find the number of modes and mode cutoff conditions in multilayer waveguiding structures. An explicit expression is presented for the number of confined modes that allows the modes to be counted without having to analyze the specific eigenvalue equation of the structure. The method is illustrated by its application to several structures: the buried layer, the directional coupler, and the three-guide symmetrical arrangement. By a suitable extension of the formalism, the number of well-confined modes is found for a four-layer structure.

  10. Numerical simulation of multi-layer graphene structures based on quantum-chemical model

    International Nuclear Information System (INIS)

    Kasper, Y; Tuchin, A; Bokova, A; Bityutskaya, L

    2016-01-01

    The electronic structure of the multi-layer graphene has been studied using the density functional theory (DFT). The dependence of the average interlayer distance on the number of layers ( n = 2 ÷ 6) has been determined. The analysis of the charge redistribution and the electron density of the bi- and three-layer graphene under the external pressure up to 50 GPa has been performed. The model of the interlayer conductivity of compressed multigraphene was offered (paper)

  11. Infinite elements for soil-structure interaction analysis in multi-layered halfspaces

    International Nuclear Information System (INIS)

    Yun, Chung Bang; Kim, Jae Min; Yang, Shin Chu

    1994-01-01

    This paper presents the theoretical aspects of a computer code (KIESSI) for soil-structure interaction analysis in a multi-layered halfspace using infinite elements. The shape functions of the infinite elements are derived from approximate expressions of the analytical solutions. Three different infinite elements are developed. They are the horizontal, the vertical and the comer infinite elements (HIE, VIE and CIE). Numerical example analyses are presented for demonstrating the effectiveness of the proposed infinite elements

  12. Metal–organic coordinated multilayer film formation: Quantitative analysis of composition and structure

    Energy Technology Data Exchange (ETDEWEB)

    Benson, Alexandra S.; Elinski, Meagan B.; Ohnsorg, Monica L.; Beaudoin, Christopher K.; Alexander, Kyle A.; Peaslee, Graham F.; DeYoung, Paul A.; Anderson, Mary E., E-mail: meanderson@hope.edu

    2015-09-01

    Metal–organic coordinated multilayers are self-assembled thin films fabricated by alternating solution–phase deposition of bifunctional organic molecules and metal ions. The multilayer film composed of α,ω-mercaptoalkanoic acid and Cu (II) has been the focus of fundamental and applied research with its robust reproducibility and seemingly simple hierarchical architecture. However, internal structure and composition have not been unambiguously established. The composition of films up to thirty layers thick was investigated using Rutherford backscattering spectrometry and particle induced X-ray emission. Findings show these films are copper enriched, elucidating a 2:1 ratio for the ion to molecule complexation at the metal–organic interface. Results also reveal that these films have an average layer density similar to literature values established for a self-assembled monolayer, indicating a robust and stable structure. The surface structures of multilayer films have been characterized by contact angle goniometry, ellipsometry, and scanning probe microscopy. A morphological transition is observed as film thickness increases from the first few foundational layers to films containing five or more layers. Surface roughness analysis quantifies this evolution as the film initially increases in roughness before obtaining a lower roughness comparable to the underlying gold substrate. Quantitative analysis of topographical structure and internal composition for metal–organic coordinated multilayers as a function of number of deposited layers has implications for their incorporation in the fields of photonics and nanolithography. - Highlights: • Layer-by-layer deposition is examined by scanning probe microscopy and ion beam analysis. • Film growth undergoes morphological evolution during foundational layer deposition. • Image analysis quantified surface features such as roughness, grain size, and coverage. • Molecular density of each film layer is found to

  13. Total reflection X-ray fluorescence analysis with synchrotron radiation monochromatized by multilayer structures

    International Nuclear Information System (INIS)

    Rieder, R.; Wobrauschek, P.; Ladisich, W.; Streli, C.; Aiginger, H.; Garbe, S.; Gaul, G.; Knoechel, A.; Lechtenberg, F.

    1995-01-01

    To achieve lowest detection limits in total reflection X-ray fluorescence analysis (TXRF) synchrotron radiation has been monochromatized by a multilayer structure to obtain a relative broad energy band compared to Bragg single crystals for an efficient excitation. The energy has been set to 14 keV, 17.5 keV, 31 keV and about 55 keV. Detection limits of 20 fg and 150 fg have been achieved for Sr and Cd, respectively. ((orig.))

  14. High performance EUV multilayer structures insensitive to capping layer optical parameters.

    Science.gov (United States)

    Pelizzo, Maria Guglielmina; Suman, Michele; Monaco, Gianni; Nicolosi, Piergiorgio; Windt, David L

    2008-09-15

    We have designed and tested a-periodic multilayer structures containing protective capping layers in order to obtain improved stability with respect to any possible changes of the capping layer optical properties (due to oxidation and contamination, for example)-while simultaneously maximizing the EUV reflection efficiency for specific applications, and in particular for EUV lithography. Such coatings may be particularly useful in EUV lithographic apparatus, because they provide both high integrated photon flux and higher stability to the harsh operating environment, which can affect seriously the performance of the multilayer-coated projector system optics. In this work, an evolutive algorithm has been developed in order to design these a-periodic structures, which have been proven to have also the property of stable performance with respect to random layer thickness errors that might occur during coating deposition. Prototypes have been fabricated, and tested with EUV and X-ray reflectometry, and secondary electron spectroscopy. The experimental results clearly show improved performance of our new a-periodic coatings design compared with standard periodic multilayer structures.

  15. An optimized multilayer structure of CdS layer for CdTe solar cells application

    International Nuclear Information System (INIS)

    Han Junfeng; Liao Cheng; Jiang Tao; Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V.; Zhao Kui; Klein, A.; Jaegermann, W.

    2011-01-01

    Research highlights: → Two different methods to prepare CdS films for CdTe solar cells. → A new multilayer structure of window layer for the CdTe solar cell. → Thinner CdS window layer for the solar cell than the standard CdS layer. → Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer (∼80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

  16. Growth of Ag micro/nanoparticles using stress migration from multilayered metallic structure

    International Nuclear Information System (INIS)

    Lu, Yebo; Li, Yuan; Saka, Masumi

    2015-01-01

    Highlights: • A multilayered metallic structure was proposed to fabricate Ag micro/nanoparticles via stress migration. • Both ductile Pt and brittle TiN films can be used as the passivation layer by providing pathways for atomic migration. • The diameter of the formed Ag particle can be controlled using different material for passivation layer and changing the heating temperature. - Abstract: A multilayered metallic structure, consisting of Cu foil and subsequently deposited Ag thin film covered with a passivation layer, was proposed to fabricate Ag micro/nanoparticles by stress migration. With employing a ductile Pt or brittle TiN thin film as passivation, Ag micro/nanoparticles were successfully fabricated by annealing the corresponding multilayered structure. The relationship between characteristics (average diameter, number and volume) of the formed Ag micro/nanoparticles and the annealing temperature was discussed. On this basis, the growth mechanism was developed, which indicates that the dimension of Ag particles was mainly dominated by the different pathways for the migration of diffused Ag atoms in the passivation layers of Pt and TiN and the annealing temperature

  17. Corrosion-resistant multilayer structures with improved reflectivity

    Science.gov (United States)

    Soufli, Regina; Fernandez-Perea, Monica; Robinson, Jeff C.

    2013-04-09

    In one general embodiment, a thin film structure includes a substrate; a first corrosion barrier layer above the substrate; a reflective layer above the first corrosion barrier layer, wherein the reflective layer comprises at least one repeating set of sub-layers, wherein one of the sub-layers of each set of sub-layers being of a corrodible material; and a second corrosion barrier layer above the reflective layer. In another general embodiment, a system includes an optical element having a thin film structure as recited above; and an image capture or spectrometer device. In a further general embodiment, a laser according to one embodiment includes a light source and the thin film structure as recited above.

  18. Electrical characterisation of semiconductor structures using AFM techniques

    International Nuclear Information System (INIS)

    Kovac jr, J.; Kovac, J.; Hotovy, J.; Novotny, I.; Skriniarova, J.; Dutkova, E.; Balaz, P.

    2011-01-01

    The microscopic dimensions appear to be a fundamental limitation to many common measurement techniques. The use of Current-Atomic Force Microscopy (I-AFM) bids a possibility to acquire topography image along with the current flow mappings which can be lapped over in resulting image as presented in this paper. A current distribution on the ZnO surface of p-Si/n- ZnO diode structure with CdS or ZnS nanocrystalline quantum dot clusters at the interface has been measured. The resulting images show a conductivity mapping different from topography what induces a conductive channels at the edges of the ZnO grains. We have successfully used I-AFM method where conductive AFM tip is scanning over the surface of the sample to create a topography image along with a current flow mapping of p-Si substrate covered with CdS or ZnS nanocrystalline clusters overlapped by 100 nm thick n-ZnO layer. The measured current mappings of both samples revealed a formation of conductive channels between the clusters of quantum dots when the sample is forward biased. We are able to create 3D topography images of combined with the forward biased current mapping textures which gives complex information about local conductivity and using this method it should be possible to find hidden current leaks in the samples for example defects in most semiconductor materials. A drift current generated in p-n junction was recorded when the sample was reverse biased while the sample has been exposed to light. Possible UV light source should cause a higher reverse current due to high bandgap of ZnS clusters which is a motivation to further research. The devices fabricated from these structures have the potential applications for solar cells or broadband photodetectors. (authors)

  19. Large-area soft x-ray projection lithography using multilayer mirrors structured by RIE

    Science.gov (United States)

    Rahn, Steffen; Kloidt, Andreas; Kleineberg, Ulf; Schmiedeskamp, Bernt; Kadel, Klaus; Schomburg, Werner K.; Hormes, F. J.; Heinzmann, Ulrich

    1993-01-01

    SXPL (soft X-ray projection lithography) is one of the most promising applications of X-ray reflecting optics using multilayer mirrors. Within our collaboration, such multilayer mirrors were fabricated, characterized, laterally structured and then used as reflection masks in a projecting lithography procedure. Mo/Si-multilayer mirrors were produced by electron beam evaporation in UHV under thermal treatment with an in-situ X-ray controlled thickness in the region of 2d equals 14 nm. The reflectivities measured at normal incidence reached up to 54%. Various surface analysis techniques have been applied in order to characterize and optimize the X-ray mirrors. The multilayers were patterned by reactive ion etching (RIE) with CF(subscript 4), using a photoresist as the etch mask, thus producing X-ray reflection masks. The masks were tested in the synchrotron radiation laboratory of the electron accelerator ELSA at the Physikalisches Institut of Bonn University. A double crystal X-ray monochromator was modified so as to allow about 0.5 cm(superscript 2) of the reflection mask to be illuminated by white synchrotron radiation. The reflected patterns were projected (with an energy of 100 eV) onto the resist (Hoechst AZ PF 514), which was mounted at an average distance of about 7 mm. In the first test-experiments, structure sizes down to 8 micrometers were nicely reproduced over the whole of the exposed area. Smaller structures were distorted by Fresnel-diffraction. The theoretically calculated diffraction images agree very well with the observed images.

  20. Sintering of Multilayered Porous Structures: Part I-Constitutive Models

    DEFF Research Database (Denmark)

    Olevsky, Eugene; Tadesse Molla, Tesfaye; Frandsen, Henrik Lund

    2013-01-01

    Theoretical analyses of shrinkage and distortion kinetics during sintering of bilayered porous structures are carried out. The developed modeling framework is based on the continuum theory of sintering; it enables the direct assessment of the cofiring process outcomes and of the impact of process...

  1. Quantitative Diagnostics of Multilayered Composite Structures with Ultrasonic Guided Waves

    Science.gov (United States)

    2014-09-01

    sensors. These IDT sensors were fabricated from thin wafer of piezoelectric lead zirconate titanate ( PZT ) substrates by using a pulse laser micro...pavement structures," J. Acoust. Soc. Am., vol. 116, no. 5, pp. 2902-2913, 2004. [9] E. Kostson and P. Fromme, " Fatigue crack growth monitoring in multi

  2. Rapid interferometric imaging of printed drug laden multilayer structures

    DEFF Research Database (Denmark)

    Sandler, Niklas; Kassamakov, Ivan; Ehlers, Henrik

    2014-01-01

    The developments in printing technologies allow fabrication of micron-size nano-layered delivery systems to personal specifications. In this study we fabricated layered polymer structures for drug-delivery into a microfluidic channel and aimed to interferometrically assure their topography...

  3. Structure Transformation and Coherent Interface in Large Lattice-Mismatched Nanoscale Multilayers

    Directory of Open Access Journals (Sweden)

    J. Y. Xie

    2013-01-01

    Full Text Available Nanoscale Al/W multilayers were fabricated by DC magnetron sputtering and characterized by transmission electron microscopy and high-resolution electron microscopy. Despite the large lattice mismatch and significantly different lattice structures between Al and W, a structural transition from face-centered cubic to body-centered cubic in Al layers was observed when the individual layer thickness was reduced from 5 nm to 1 nm, forming coherent Al/W interfaces. For potential mechanisms underlying the observed structure transition and forming of coherent interfaces, it was suggested that the reduction of interfacial energy and high stresses induced by large lattice-mismatch play a crucial role.

  4. Computational Modeling of Bloch Surface Waves in One-Dimensional Periodic and Aperiodic Multilayer Structures

    Science.gov (United States)

    Koju, Vijay

    Photonic crystals and their use in exciting Bloch surface waves have received immense attention over the past few decades. This interest is mainly due to their applications in bio-sensing, wave-guiding, and other optical phenomena such as surface field enhanced Raman spectroscopy. Improvement in numerical modeling techniques, state of the art computing resources, and advances in fabrication techniques have also assisted in growing interest in this field. The ability to model photonic crystals computationally has benefited both the theoretical as well as experimental communities. It helps the theoretical physicists in solving complex problems which cannot be solved analytically and helps to acquire useful insights that cannot be obtained otherwise. Experimentalists, on the other hand, can test different variants of their devices by changing device parameters to optimize performance before fabrication. In this dissertation, we develop two commonly used numerical techniques, namely transfer matrix method, and rigorous coupled wave analysis, in C++ and MATLAB, and use two additional software packages, one open-source and another commercial, to model one-dimensional photonic crystals. Different variants of one-dimensional multilayered structures such as perfectly periodic dielectric multilayers, quasicrystals, aperiodic multilayer are modeled, along with one-dimensional photonic crystals with gratings on the top layer. Applications of Bloch surface waves, along with new and novel aperiodic dielectric multilayer structures that support Bloch surface waves are explored in this dissertation. We demonstrate a slow light configuration that makes use of Bloch Surface Waves as an intermediate excitation in a double-prism tunneling configuration. This method is simple compared to the more usual techniques for slowing light using the phenomenon of electromagnetically induced transparency in atomic gases or doped ionic crystals operated at temperatures below 4K. Using a semi

  5. Enhanced Detectability of Community Structure in Multilayer Networks through Layer Aggregation.

    Science.gov (United States)

    Taylor, Dane; Shai, Saray; Stanley, Natalie; Mucha, Peter J

    2016-06-03

    Many systems are naturally represented by a multilayer network in which edges exist in multiple layers that encode different, but potentially related, types of interactions, and it is important to understand limitations on the detectability of community structure in these networks. Using random matrix theory, we analyze detectability limitations for multilayer (specifically, multiplex) stochastic block models (SBMs) in which L layers are derived from a common SBM. We study the effect of layer aggregation on detectability for several aggregation methods, including summation of the layers' adjacency matrices for which we show the detectability limit vanishes as O(L^{-1/2}) with increasing number of layers, L. Importantly, we find a similar scaling behavior when the summation is thresholded at an optimal value, providing insight into the common-but not well understood-practice of thresholding pairwise-interaction data to obtain sparse network representations.

  6. Structure and mechanical properties of reactive sputter deposited TiN/TaN multilayered films

    International Nuclear Information System (INIS)

    Soe, W.H.; Yamamoto, R.; Ueda, H.; Shima, N.

    1998-01-01

    TiN/TaN multilayers were grown by reactive magnetron sputtering on WC-Co sintered hard alloy and MgO(100) single crystal substrates. Multilayer structure and composition modulation amplitudes were studied using x-ray diffraction method. Hardness and elastic modulus were measured by nanoindentation tester. For bilayer thickness (Λ) larger than 80 angstrom, hardness are lower than rule-of-mixtures value of individual single layers, and increased rapidly with decreasing Λ, peaking at hardness values ∼33% higher than that at Λ = 43 angstrom. As a result of analysis the inclination of applied load for indenter displacement on P-h curve (ΔP/Δh), this paper exhibits that the enhancement of the resistance to dislocation motion and elastic anomaly due to coherency strains are responsible for the hardness change

  7. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Stephan, Christiane

    2011-03-15

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB{sup III}C{sup VI}{sub 2} (B{sup III} = In, Ga and C{sup VI} = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB{sup III}C{sup VI}{sub 2} compound semiconductors. The study is done on reference powder samples with well determined chemical composition and

  8. ZnO/Cu/ZnO multilayer films: Structure optimization and investigation on photoelectric properties

    International Nuclear Information System (INIS)

    Liu Xiaoyu; Li Yingai; Liu Shi; Wu Honglin; Cui Haining

    2012-01-01

    A series of ZnO/Cu/ZnO multilayer films has been fabricated from zinc and copper metallic targets by simultaneous RF and DC magnetron sputtering. Numerical simulation of the optical properties of the multilayer films has been carried out in order to guide the experimental work. The influences of the ZnO and Cu layer thicknesses, and of O 2 /Ar ratio on the photoelectric and structural properties of the films were investigated. The optical and electrical properties of the multilayers were studied by optical spectrometry and four point probe measurements, respectively. The structural properties were investigated using X-ray diffraction. The performance of the multilayers as transparent conducting coatings was compared using a figure of merit. In experiments, the thickness of the ZnO layers was varied between 4 and 70 nm and those of Cu were between 8 and 37 nm. The O 2 /Ar ratios range from 1:5 to 2:1. Low sheet resistance and high transmittance were obtained when the film was prepared using an O 2 /Ar ratio of 1:4 and a thickness of ZnO (60 nm)/Cu (15 nm)/ZnO (60 nm). - Highlights: ► ZnO/Cu/ZnO films were fabricated from zinc and copper targets by sputtering. ► Transmittance reaches maximum when top and bottom ZnO thicknesses are nearly equal. ► Sheet resistance increases with increasing ZnO layer thickness. ► Variation in sheet resistance with oxygen/argon ratio is due to interface effect.

  9. Mechanical and structural properties of sputtered Ni/Ti multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Senthil Kumar, M.; Boeni, P.; Tixier, S.; Clemens, D.; Horisberger, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    Ni/Ti bilayers have been prepared by dc-magnetron sputtering in order to study their mechanical and structural properties. A remarkable reduction of stress is observed when the Ni layers are sputtered reactively in argon with a high partial pressure of air. The high angle x-ray diffraction studies show a tendency towards amorphisation of the Ni layers with increasing air flow. The low angle measurements indicate a substantial reduction of interdiffusion resulting in smoother interfaces with increasing air content. (author) 2 figs., 2 refs.

  10. Reduced thermal conductivity of isotopically modulated silicon multilayer structures

    DEFF Research Database (Denmark)

    Bracht, H.; Wehmeier, N.; Eon, S.

    2012-01-01

    We report measurements of the thermal conductivity of isotopically modulated silicon that consists of alternating layers of highly enriched silicon-28 and silicon-29. A reduced thermal conductivity of the isotopically modulated silicon compared to natural silicon was measured by means of time......-resolved x-ray scattering. Comparison of the experimental results to numerical solutions of the corresponding heat diffusion equations reveals a factor of three lower thermal conductivity of the isotope structure compared to natural Si. Our results demonstrate that the thermal conductivity of silicon can...

  11. Temperature dependence of the electronic structure of semiconductors and insulators

    Energy Technology Data Exchange (ETDEWEB)

    Poncé, S., E-mail: samuel.pon@gmail.com; Gillet, Y.; Laflamme Janssen, J.; Gonze, X. [European Theoretical Spectroscopy Facility and Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, Chemin des étoiles 8, bte L07.03.01, B-1348 Louvain-la-neuve (Belgium); Marini, A. [Consiglio Nazionale delle Ricerche (CNR), Via Salaria Km 29.3, CP 10, 00016 Monterotondo Stazione (Italy); Verstraete, M. [European Theoretical Spectroscopy Facility and Physique des matériaux et nanostructures, Université de Liège, Allée du 6 Août 17, B-4000 Liège (Belgium)

    2015-09-14

    The renormalization of electronic eigenenergies due to electron-phonon coupling (temperature dependence and zero-point motion effect) is sizable in many materials with light atoms. This effect, often neglected in ab initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the recent progresses in this field and a brief overview of the theory, we focus on the issue of phonon wavevector sampling convergence, until now poorly understood. Indeed, the renormalization is obtained numerically through a slowly converging q-point integration. For non-zero Born effective charges, we show that a divergence appears in the electron-phonon matrix elements at q → Γ, leading to a divergence of the adiabatic renormalization at band extrema. This problem is exacerbated by the slow convergence of Born effective charges with electronic wavevector sampling, which leaves residual Born effective charges in ab initio calculations on materials that are physically devoid of such charges. Here, we propose a solution that improves this convergence. However, for materials where Born effective charges are physically non-zero, the divergence of the renormalization indicates a breakdown of the adiabatic harmonic approximation, which we assess here by switching to the non-adiabatic harmonic approximation. Also, we study the convergence behavior of the renormalization and develop reliable extrapolation schemes to obtain the converged results. Finally, the adiabatic and non-adiabatic theories, with corrections for the slow Born effective charge convergence problem (and the associated divergence) are applied to the study of five semiconductors and insulators: α-AlN, β-AlN, BN, diamond, and silicon. For these five materials, we present the zero-point renormalization, temperature dependence, phonon-induced lifetime broadening, and the renormalized electronic band structure.

  12. Nanoscopic diffusion studies on III-V compound semiconductor structures: Experiment and theory

    Science.gov (United States)

    Gonzalez Debs, Mariam

    The electronic structure of multilayer semiconductor heterostructures is affected by the detailed compositional profiles throughout the structure and at critical interfaces. The extent of interdiffusion across these interfaces places limits on both the processing time and temperatures for many applications based on the resultant compositional profile and associated electronic structure. Atomic and phenomenological methods were used in this work through the combination of experiment and theory to understand the nanoscopic mechanisms in complex heterostructures. Two principal studies were conducted. Tin diffusion in GaAs was studied by fitting complex experimental diffusion profiles to a phenomenological model which involved the diffusion of substitutional and interstitial dopant atoms. A methodology was developed combining both the atomistic model and the use of key features within these experimentally-obtained diffusion profiles to determine meaningful values of the transport and defect reaction rate parameters. Interdiffusion across AlSb/GaSb multi-quantum well interfaces was also studied. The chemical diffusion coefficient characterizing the AlSb/GaSb diffusion couple was quantitatively determined by fitting the observed photoluminescence (PL) peak shifts to the solution of the Schrodinger equation using a potential derived from the solution of the diffusion equation to quantify the interband transition energy shifts. First-principles calculations implementing Density Functional Theory were performed to study the thermochemistry of point defects as a function of local environment, allowing a direct comparison of interfacial and bulk diffusion phenomena within these nanoscopic structures. Significant differences were observed in the Ga and Al vacancy formation energies at the AlSb/GaSb interface when compared to bulk AlSb and GaSb with the largest change found for Al vacancies. The AlSb/GaSb structures were further studied using positron annihilation spectroscopy

  13. Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

    International Nuclear Information System (INIS)

    Kehagias, N; Reboud, V; Chansin, G; Zelsmann, M; Jeppesen, C; Schuster, C; Kubenz, M; Reuther, F; Gruetzner, G; Torres, C M Sotomayor

    2007-01-01

    In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three-dimensional patterning. Three-dimensional woodpile-like structures were successfully fabricated with this new technique

  14. Structure of metal-rich (001) surfaces of III-V compound semiconductors

    DEFF Research Database (Denmark)

    Kumpf, C.; Smilgies, D.; Landemark, E.

    2001-01-01

    The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks....

  15. Influence of Fe nanoparticles diameters on the structure and electron emission studies of carbon nanotubes and multilayer graphene

    International Nuclear Information System (INIS)

    Sharma, Himani; Shukla, A.K.; Vankar, V.D.

    2013-01-01

    In this paper we report the effect of Fe film thickness on the growth, structure and electron emission characteristics of carbon nanotubes (CNTs) and multilayer graphene deposited on Si substrate. It is observed that the number of graphitic shells in carbon nanostructures (CNs) varies with the thickness of the catalyst depending on the average size of nanoparticles. Further, the Fe nanoparticles do not catalyze beyond a particular size of nanoclusters leading to the formation of multilayer graphene structure, instead of carbon nanotubes (CNTs). It is observed that the crystallinity of CNs enhances upon increasing the catalyst thickness. Multilayer graphene structures show improved crystallinity in comparison to CNTs as graphitic to defect mode intensity ratio (I D /I G ) decreases from 1.2 to 0.8. However, I 2D /I G value for multilayer graphene is found to be 1.1 confirming the presence of at least 10 layers of graphene in these samples. CNTs with smaller diameter show better electron emission properties with enhancement factor (γ C = 2.8 × 10 3 ) in comparison to multilayer graphene structure (γ C = 1.5 × 10 3 ). The better emission characteristics in CNTs are explained due to combination of electrons from edges as well as centers in comparison to the multilayer graphene. Highlights: ► Graphitic shells in CNTs and graphene depend on the size of Fe nanoparticles. ► The diameter of nanoparticles decides the morphology of CNTs and graphene. ► Multilayer graphene structures show improved crystallinity in comparison to CNTs. ► Multilayer graphene (MLG) has the γ C factor of 1.5 × 10 3 and CNTs has 2.8 × 10 3 . ► The nonlinearity in MLG may occur through change in work function.

  16. Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Arroyo Rojas Dasilva, Yadira; Kozak, Roksolana; Erni, Rolf; Rossell, Marta D., E-mail: marta.rossell@empa.ch

    2017-05-15

    The development of new electro-optical devices and the realization of novel types of transistors require a profound understanding of the structural characteristics of new semiconductor heterostructures. This article provides a concise review about structural defects which occur in semiconductor heterostructures on the basis of micro-patterned Si substrates. In particular, one- and two-dimensional crystal defects are being discussed which are due to the plastic relaxation of epitaxial strain caused by the misfit of crystal lattices. Besides a few selected examples from literature, we treat in particular crystal defects occurring in GaAs/Si, Ge/Si and β-SiC/Si structures which are studied by high-resolution annular dark-field scanning transmission electron microscopy. The relevance of this article is twofold; firstly, it should provide a collection of data which are of help for the identification and characterization of defects in cubic semiconductors by means of atomic-resolution imaging, and secondly, the experimental data shall provide a basis for advancing the understanding of device characteristics with the aid of theoretical modelling by considering the defective nature of strained semiconductor heterostructures. - Highlights: • The heterogeneous integration of high-quality compound semiconductors remains a challenge. • Lattice defects cause severe degradation of the semiconductor device performances. • Aberration-corrected HAADF-STEM allows atomic-scale characterization of defects. • An overview of lattice defects found in cubic semiconductors is presented. • Theoretical modelling and calculations are needed to determine the defect properties.

  17. Multi-layered population structure in Island Southeast Asians

    Science.gov (United States)

    Mörseburg, Alexander; Pagani, Luca; Ricaut, Francois-Xavier; Yngvadottir, Bryndis; Harney, Eadaoin; Castillo, Cristina; Hoogervorst, Tom; Antao, Tiago; Kusuma, Pradiptajati; Brucato, Nicolas; Cardona, Alexia; Pierron, Denis; Letellier, Thierry; Wee, Joseph; Abdullah, Syafiq; Metspalu, Mait; Kivisild, Toomas

    2016-01-01

    The history of human settlement in Southeast Asia has been complex and involved several distinct dispersal events. Here, we report the analyses of 1825 individuals from Southeast Asia including new genome-wide genotype data for 146 individuals from three Mainland Southeast Asian (Burmese, Malay and Vietnamese) and four Island Southeast Asian (Dusun, Filipino, Kankanaey and Murut) populations. While confirming the presence of previously recognised major ancestry components in the Southeast Asian population structure, we highlight the Kankanaey Igorots from the highlands of the Philippine Mountain Province as likely the closest living representatives of the source population that may have given rise to the Austronesian expansion. This conclusion rests on independent evidence from various analyses of autosomal data and uniparental markers. Given the extensive presence of trade goods, cultural and linguistic evidence of Indian influence in Southeast Asia starting from 2.5 kya, we also detect traces of a South Asian signature in different populations in the region dating to the last couple of thousand years. PMID:27302840

  18. Self-organized emergence of multilayer structure and chimera states in dynamical networks with adaptive couplings

    Science.gov (United States)

    Kasatkin, D. V.; Yanchuk, S.; Schöll, E.; Nekorkin, V. I.

    2017-12-01

    We report the phenomenon of self-organized emergence of hierarchical multilayered structures and chimera states in dynamical networks with adaptive couplings. This process is characterized by a sequential formation of subnetworks (layers) of densely coupled elements, the size of which is ordered in a hierarchical way, and which are weakly coupled between each other. We show that the hierarchical structure causes the decoupling of the subnetworks. Each layer can exhibit either a two-cluster state, a periodic traveling wave, or an incoherent state, and these states can coexist on different scales of subnetwork sizes.

  19. Determination of dynamic characteristics of multi-layer carbon plastic structures of high-resolution scanner

    Directory of Open Access Journals (Sweden)

    В. Н. Маслей

    2017-10-01

    Full Text Available The comparative analysis results for the numerical determination of the dynamic characteristics of multi-layer carbon-fiber plates of the space vehicle scanner design by various types of finite element approximation of the physico-mechanical properties of the composite material are presented. Using the topological structure of the construction of reinforcing layers material in the plate package plane, experimental data for the elastic and mass characteristics of homogeneous carbon-fiber fibers, equivalent structural and orthotropic stiffness and elastic characteristics of the material of composite plates are determined.

  20. LSMO-STO(110) multilayered structure grown by metalorganic aerosol deposition

    International Nuclear Information System (INIS)

    Sapoval, Oleg; Belenchuk, Alexander; Canter, Valeriu; Zasavitsky, Efim; Moshnyaga, Vasily

    2013-01-01

    La 0.67 Sr 0.33 MnO 3 -SrTiO 3 multilayered structure was grown on SrTiO 3 (110) substrates by metalorganic aerosol deposition technique. The crystal structure was examined by X-ray analysis including simulation of diffraction and reflection patterns. The magneto transport properties of superlattice are presented. The critical thickness of (110)-oriented LSMO layers is lower than 7 perovskite unite cells. The oxygen stoichiometry provided due to high gas pressure conditions is responsible for reducing of critical thickness of LSMO layers at LSMO-STO(110) interfaces. (authors)

  1. A multilayered supramolecular self-assembled structure from soybean oil by in situ polymerization and its applications.

    Science.gov (United States)

    Kavitha, Varadharajan; Gnanamani, Arumugam

    2013-05-01

    The present study emphasizes in situ transformation of soybean oil to self-assembled supramolecular multilayered biopolymer material. The said polymer material was characterized and the entrapment efficacy of both hydrophilic and hydrophobic moieties was studied. In brief, soybean oil at varying concentration was mixed with mineral medium and incubated under agitation (200 rpm) at 37 degrees C for 240 h. Physical observations were made till 240 h and the transformed biopolymer was separated and subjected to physical, chemical and functional characterization. The maximum size of the polymer material was measured as 2 cm in diameter and the cross sectional view displayed the multilayered onion rings like structures. SEM analysis illustrated the presence of multilayered honeycomb channeled structures. Thermal analysis demonstrated the thermal stability (200 degrees C) and high heat enthalpy (1999 J/g). Further, this multilayered assembly was able to entrap both hydrophilic and hydrophobic components simultaneously, suggesting the potential industrial application of this material.

  2. Positron studies of metal-oxide-semiconductor structures

    Science.gov (United States)

    Au, H. L.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.

    1993-03-01

    Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.

  3. A thick hierarchical rutile TiO2 nanomaterial with multilayered structure

    International Nuclear Information System (INIS)

    Zhu, Shengli; Xie, Guoqiang; Yang, Xianjin; Cui, Zhenduo

    2013-01-01

    Highlights: ► We synthesized a new rutile TiO 2 nanomaterial with a hierarchical nanostructure. ► The nano architecture structure consist of nanorods and nanoflower arrays. ► The rutile TiO 2 nanomaterial is thick in size (several 10 μm). ► The TiO 2 nanomaterials present a multilayer structure. - Abstract: In the present paper, we synthesized a new type of rutile TiO 2 nanomaterial with a hierarchical nanostructure using a novel method, which combined dealloying process with chemical synthesis. The structure characters were examined using X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The rutile TiO 2 nanomaterial is thick in size (several 10 μm). The hierarchical structure of the rutile TiO 2 nanomaterial consists of large quantities nanorods and nanoflower arrays. The nanoflowers consist of serveral nanopetals with diameter of 100–200 nm. The cross section of TiO 2 nanomaterials presents a multilayer structure with the layer thickness of about 3–5 μm. The rutile TiO 2 nanomaterial has high specific surface area. The formation mechanism of the rutile TiO 2 nanomaterial was discussed according to the experimental results. The rutile TiO 2 nanomaterial has potential applications in catalysis, photocatalysis and solar cells

  4. A Study on Elastic Guided Wave Modal Characteristics in Multi-Layered Structures

    International Nuclear Information System (INIS)

    Cho, Youn Ho; Lee, Chong Myoung

    2008-01-01

    In this study, we have developed a program which can calculate phase and group velocities, attenuation and wave structures of each mode in multi-layered plates. The wave structures of each mode are obtained, varying material properties and number of layers. The key in the success of guided wave NDE is how to optimize the mode selection scheme by minimizing energy loss when a structure is in contact with liquid. In this study, the normalized out-of-plane displacements at the surface of a free plate are used to predict the variation of modal attenuation and verily the correlation between attenuation and wave structure. It turns out that the guided wave attenuation can be efficiently obtain from the out-of-plane displacement variation of a free wave guide alleviating such mathematical difficulties in extracting complex roots for the eigenvalue problem of a liquid loaded wave guide. Through this study, the concert to optimize guided wave mode selection is accomplished to enhance sensitivity and efficiency in nondestructive evaluation for multi-layered structures.

  5. Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer

    Directory of Open Access Journals (Sweden)

    Mitali Swain

    2015-07-01

    Full Text Available Nickel-Germanides are an important class of metal semiconductor alloys because of their suitability in microelectronics applications. Here we report successful formation and detailed characterization of NiGe metallic alloy phase at the interfaces of a Ni-Ge multilayer on controlled annealing at relatively low temperature ∼ 250 °C. Using x-ray and polarized neutron reflectometry, we could estimate the width of the interfacial alloys formed with nanometer resolution and found the alloy stoichiometry to be equiatomic NiGe, a desirable low-resistance interconnect. We found significant drop in resistance (∼ 50% on annealing the Ni-Ge multilayer suggesting metallic nature of alloy phase at the interfaces. Further we estimated the resistivity of the alloy phase to be ∼ 59μΩ cm.

  6. Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

    International Nuclear Information System (INIS)

    Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

    2009-01-01

    An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

  7. Building Structural Complexity in Semiconductor Nanocrystals through Chemical Transformations

    Energy Technology Data Exchange (ETDEWEB)

    Sadtler, Bryce F [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2009-05-01

    Methods are presented for synthesizing nanocrystal heterostructures comprised of two semiconductor materials epitaxially attached within individual nanostructures. The chemical transformation of cation exchange, where the cations within the lattice of an ionic nanocrystal are replaced with a different metal ion species, is used to alter the chemical composition at specific regions ofa nanocrystal. Partial cation exchange was performed in cadmium sulfide (CdS) nanorods of well-defined size and shape to examine the spatial organization of materials within the resulting nanocrystal heterostructures. The selectivity for cation exchange to take place at different facets of the nanocrystal plays an important role in determining the resulting morphology of the binary heterostructure. The exchange of copper (I) (Cu+) cations in CdS nanorods occurs preferentially at the ends of the nanorods. Theoretical modeling of epitaxial attachments between different facets of CdS and Cu2S indicate that the selectivity for cation exchange at the ends of the nanorods is a result of the low formation energy of the interfaces produced. During silver (I) (Ag+) cation exchange in CdS nanorods, non-selective nucleation of silver sulfide (Ag2S), followed by partial phase segregation leads to significant changes in the spatial arrangement of CdS and Ag2S regions at the exchange reaction proceeds through the nanocrystal. A well-ordered striped pattern of alternating CdS and Ag2S segments is found at intermediate fractions of exchange. The forces mediating this spontaneous process are a combination of Ostwald ripening to reduce the interfacial area along with a strain-induced repulsive interaction between Ag2S segments. To elucidate why Cu+ and Ag+ cation exchange with CdS nanorods produce different morphologies, models for epitaxial attachments between various facets of CdS with Cu2S or

  8. Multilayered photonic integration on SOI platform using waveguide-based bridge structure

    Science.gov (United States)

    Majumder, Saikat; Chakraborty, Rajib

    2018-06-01

    A waveguide based structure on silicon on insulator platform is proposed for vertical integration in photonic integrated circuits. The structure consists of two multimode interference couplers connected by a single mode (SM) section which can act as a bridge over any other underlying device. Two more SM sections acts as input and output of the first and second multimode couplers respectively. Potential application of this structure is in multilayered photonic links. It is shown that the efficiency of the structure can be improved by making some design modifications. The entire simulation is done using effective-index based matrix method. The feature size chosen are comparable to waveguides fabricated previously so as to fabricate the proposed structure easily.

  9. FEM Analysis of Sezawa Mode SAW Sensor for VOC Based on CMOS Compatible AlN/SiO2/Si Multilayer Structure

    Directory of Open Access Journals (Sweden)

    Muhammad Zubair Aslam

    2018-05-01

    Full Text Available A Finite Element Method (FEM simulation study is conducted, aiming to scrutinize the sensitivity of Sezawa wave mode in a multilayer AlN/SiO2/Si Surface Acoustic Wave (SAW sensor to low concentrations of Volatile Organic Compounds (VOCs, that is, trichloromethane, trichloroethylene, carbon tetrachloride and tetrachloroethene. A Complimentary Metal-Oxide Semiconductor (CMOS compatible AlN/SiO2/Si based multilayer SAW resonator structure is taken into account for this purpose. In this study, first, the influence of AlN and SiO2 layers’ thicknesses over phase velocities and electromechanical coupling coefficients (k2 of two SAW modes (i.e., Rayleigh and Sezawa is analyzed and the optimal thicknesses of AlN and SiO2 layers are opted for best propagation characteristics. Next, the study is further extended to analyze the mass loading effect on resonance frequencies of SAW modes by coating a thin Polyisobutylene (PIB polymer film over the AlN surface. Finally, the sensitivity of the two SAW modes is examined for VOCs. This study concluded that the sensitivity of Sezawa wave mode for 1 ppm of selected volatile organic gases is twice that of the Rayleigh wave mode.

  10. Controlled gentamicin release from multi-layered electrospun nanofibrous structures of various thicknesses

    Czech Academy of Sciences Publication Activity Database

    Širc, Jakub; Kubinová, Šárka; Hobzová, Radka; Stránská, D.; Kozlík, P.; Bosáková, Z.; Mareková, Dana; Holáň, Vladimír; Syková, Eva; Michálek, Jiří

    2012-01-01

    Roč. 7, 8 October (2012), s. 5315-5325 E-ISSN 1178-2013 R&D Projects: GA AV ČR KAN200520804 Institutional research plan: CEZ:AV0Z40500505; CEZ:AV0Z50520514; CEZ:AV0Z50390512 Institutional support: RVO:61389013 ; RVO:68378050 ; RVO:68378041 Keywords : nanofibers * electrospinning * multilayered structure Subject RIV: CD - Macromolecular Chemistry; EI - Biotechnology ; Bionics (UMG-J); FH - Neurology (UEM-P) Impact factor: 3.463, year: 2012

  11. Studies of the structure and properties of organic monolayers, multilayers and superlattices

    International Nuclear Information System (INIS)

    Dutta, P.; Ketterson, J.B.

    1990-01-01

    Organic monolayers and multilayers are both scientifically fascinating and technologically promising; they are, however, both complex systems and relatively inaccessible to experimental probes. In this progress report, we describe our x-ray diffraction studies, which have given us substantial new information about the structures and phase transitions in monolayers on the surface of water; our use of these monolayers as a unique probe of the dynamics of wetting and spreading; and our studies of monolayer mechanical properties using a simple but effective technique available to anyone using the Wilhelmy method to measure surface tension. 20 refs., 11 figs

  12. Vertical coupling and transition energies in multilayer InAs/GaAs quantum-dot structures

    Science.gov (United States)

    Taddei, S.; Colocci, M.; Vinattieri, A.; Bogani, F.; Franchi, S.; Frigeri, P.; Lazzarini, L.; Salviati, G.

    2000-10-01

    Vertically ordered quantum dots in multilayer InAs/GaAs structures have attracted large interest in recent years for device application as light emitters. Contradictory claims on the dependence of the fundamental transition energy on the interlayer separation and number of dot layers have been reported in the literature. We show that either a blueshift or a redshift of the fundamental transition energy can be observed in different coupling conditions and straightforwardly explained by including strain, indium segregation, and electron-hole Coulomb interaction, in good agreement with experimental results.

  13. Quasi-effective medium theory for multi-layered magneto-dielectric structures

    International Nuclear Information System (INIS)

    Genov, Dentcho A; Mundru, Pattabhiraju C

    2014-01-01

    We present a quasi-effective medium theory that determines the optical properties of multi-layered composites beyond the quasi-static limit. The proposed theory exactly reproduces the far field scattering/extinction cross sections through an iterative process in which mode-dependent quasi-effective impedances of the composite system are introduced. In the large wavelength limit our theory is consistent with the Maxwell–Garnett formalism. Possible applications in determining the hybridization particle resonances of multi-shell structures and electromagnetic cloaking are identified. (paper)

  14. X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Hamad, Kimberly Sue [Univ. of California, Berkeley, CA (United States)

    2000-01-01

    Semiconductor nanocrystals are a system which has been the focus of interest due to their size dependent properties and their possible use in technological applications. Many chemical and physical properties vary systematically with the size of the nanocrystal and thus their study enables the investigation of scaling laws. Due to the increasing surface to volume ratio as size is decreased, the surfaces of nanocrystals are expected to have a large influence on their electronic, thermodynamic, and chemical behavior. In spite of their importance, nanocrystal surfaces are still relatively uncharacterized in terms of their structure, electronic properties, bonding, and reactivity. Investigation of nanocrystal surfaces is currently limited by what techniques to use, and which methods are suitable for nanocrystals is still being determined. This work presents experiments using x-ray and electronic spectroscopies to explore the structure, reactivity, and electronic properties of semiconductor (CdSe, InAs) nanocrystals and how they vary with size. Specifically, x-ray absorption near edge spectroscopy (XANES) in conjunction with multiple scattering simulations affords information about the structural disorder present at the surface of the nanocrystal. X-ray photoelectron spectroscopy (XPS) and ultra-violet photoelectron spectroscopy (UPS) probe the electronic structure in terms of hole screening, and also give information about band lineups when the nanocrystal is placed in electric contact with a substrate. XPS of the core levels of the nanocrystal as a function of photo-oxidation time yields kinetic data on the oxidation reaction occurring at the surface of the nanocrystal.

  15. Disentangling the co-structure of multilayer interaction networks: degree distribution and module composition in two-layer bipartite networks.

    Science.gov (United States)

    Astegiano, Julia; Altermatt, Florian; Massol, François

    2017-11-13

    Species establish different interactions (e.g. antagonistic, mutualistic) with multiple species, forming multilayer ecological networks. Disentangling network co-structure in multilayer networks is crucial to predict how biodiversity loss may affect the persistence of multispecies assemblages. Existing methods to analyse multilayer networks often fail to consider network co-structure. We present a new method to evaluate the modular co-structure of multilayer networks through the assessment of species degree co-distribution and network module composition. We focus on modular structure because of its high prevalence among ecological networks. We apply our method to two Lepidoptera-plant networks, one describing caterpillar-plant herbivory interactions and one representing adult Lepidoptera nectaring on flowers, thereby possibly pollinating them. More than 50% of the species established either herbivory or visitation interactions, but not both. These species were over-represented among plants and lepidopterans, and were present in most modules in both networks. Similarity in module composition between networks was high but not different from random expectations. Our method clearly delineates the importance of interpreting multilayer module composition similarity in the light of the constraints imposed by network structure to predict the potential indirect effects of species loss through interconnected modular networks.

  16. Generalized transmission line method to study the far-zone radiation of antennas under a multilayer structure

    CERN Document Server

    Wu, Xuan Hui

    2008-01-01

    This book gives a step-by-step presentation of a generalized transmission line method to study the far-zone radiation of antennas under a multilayer structure. Normally, a radiation problem requires a full wave analysis which may be time consuming. The beauty of the generalized transmission line method is that it transforms the radiation problem for a specific type of structure, say the multilayer structure excited by an antenna, into a circuit problem that can be efficiently analyzed. Using the Reciprocity Theorem and far-field approximation, the method computes the far-zone radiation due to

  17. Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

    Science.gov (United States)

    Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

    2018-06-01

    Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

  18. Structural, magnetic and magneto-transport properties of thermally evaporated Fe/Cu multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Bouziane, K.; Al-Busaidi, M.; Gismelseed, A.; Al-Rawas, A. [Physics Department, College of Science, Sultan Qabos University, P. O. Box 36, Postal Code 123, Al-Khodh, Muscat (Oman)

    2004-05-01

    Structural, magnetic and magneto-transport properties of thermally evaporated Fe/Cu multilayers (MLs) have been investigated. Although multilayered structure has been successfully obtained, a substantial interfacial roughness ranging from 0.6 nm to 1.2 nm has been determined. All Fe/Cu MLs were polycrystalline with an average grain size of about 10 nm. Fe was bcc and textured (110) whereas Cu was fcc(111). Transmission electron microscopy analysis showed that the fcc Cu layer was rather textured (110) and (100) at least in the first stage of growth of the Fe/Cu MLs. Conversion electron Moessbauer (CEMS) measurements indicated the existence of three phases. Two of them were magnetic with a dominant bcc Fe phase, followed by fcc Fe phase. The third phase was superparamagnetic. The CEMS results were explained in terms of the partial diffusion of Fe into Cu with three different zones. The small magnetoresistance (MR<0.2%) was correlated to Fe clusters located at Fe-Cu interfaces. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  19. Enhancement of electroplex emission by using multi-layer device structure

    International Nuclear Information System (INIS)

    Wang Yuanmin; Teng Feng; Xu Zheng; Hou Yanbing; Wang Yongsheng; Xu Xurong

    2005-01-01

    Electroplex emission based on poly(N-vinylcarbazole) (PVK) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) has been improved dramatically by using a multi-layer device structure indium-tin oxide (ITO)/poly(3,4-ethylenedioxythiophene): poly(styrenesulphonic acid) (PEDOT:PSS)/PVK/BCP/PVK/BCP/LiF/Al. Electroplex emission at 595 nm has been improved about 10 times under low voltage and four times under high voltage compared to the double layer device ITO/PVK/BCP/Al. The maximum brightness of the device also has been improved about eight times. Bright white emission via electroplex formation can be obtained with Commission International d'Eclairage (CIE) coordinates (0.336, 0.320) at 26 V with a brightness of 123 cd/m 2 . Based on the analysis of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the materials, we suggest the enhancement is mainly ascribed to the confinement effect of the quantum-well-like multi-layer device structure. Every hole and electron has more possibilities to cross recombination at the PVK/BCP interface

  20. Enhancement of electroplex emission by using multi-layer device structure

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yuanmin [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Teng Feng [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China) and Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China)]. E-mail: advanced9898@126.com; Xu Zheng [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Hou Yanbing [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Wang Yongsheng [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Xu Xurong [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China)

    2005-04-30

    Electroplex emission based on poly(N-vinylcarbazole) (PVK) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) has been improved dramatically by using a multi-layer device structure indium-tin oxide (ITO)/poly(3,4-ethylenedioxythiophene): poly(styrenesulphonic acid) (PEDOT:PSS)/PVK/BCP/PVK/BCP/LiF/Al. Electroplex emission at 595 nm has been improved about 10 times under low voltage and four times under high voltage compared to the double layer device ITO/PVK/BCP/Al. The maximum brightness of the device also has been improved about eight times. Bright white emission via electroplex formation can be obtained with Commission International d'Eclairage (CIE) coordinates (0.336, 0.320) at 26 V with a brightness of 123 cd/m{sup 2}. Based on the analysis of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the materials, we suggest the enhancement is mainly ascribed to the confinement effect of the quantum-well-like multi-layer device structure. Every hole and electron has more possibilities to cross recombination at the PVK/BCP interface.

  1. Low-frequency nondestructive analysis of cracks in multilayer structures using a scanning magnetic microscope

    Energy Technology Data Exchange (ETDEWEB)

    Adamo, M; Nappi, C; Sarnelli, E, E-mail: m.adamo@cib.na.cnr.i [Istituto di Cibernetica ' E Caianiello' , Via Campi Flegrei 34, I-80078 Pozzuoli (Italy)

    2010-09-15

    The use of a scanning magnetic microscope (SMM) with a high temperature superconducting quantum interference device (SQUID) for quantitative measurements in eddy current nondestructive analysis (NDA) is presented. The SQUID has been used to detect the weak magnetic field variations around a small defect, close to a structural part generating an intensive magnetic field. The experimental data for a deep crack close to a rivet in a multilayer conducting plate have been taken in a RF-shielded environment and discussed in the light of the theoretical predictions. The results show that eddy current NDA can distinguish subsurface crack signals from wider structural signals, with defects located 10 mm below the surface. Moreover, in order to visualize the structure of the probing current when a circular induction coil is used, the simulation of eddy currents in a thick unflawed conducting plate has been carried out.

  2. Low-frequency nondestructive analysis of cracks in multilayer structures using a scanning magnetic microscope

    International Nuclear Information System (INIS)

    Adamo, M; Nappi, C; Sarnelli, E

    2010-01-01

    The use of a scanning magnetic microscope (SMM) with a high temperature superconducting quantum interference device (SQUID) for quantitative measurements in eddy current nondestructive analysis (NDA) is presented. The SQUID has been used to detect the weak magnetic field variations around a small defect, close to a structural part generating an intensive magnetic field. The experimental data for a deep crack close to a rivet in a multilayer conducting plate have been taken in a RF-shielded environment and discussed in the light of the theoretical predictions. The results show that eddy current NDA can distinguish subsurface crack signals from wider structural signals, with defects located 10 mm below the surface. Moreover, in order to visualize the structure of the probing current when a circular induction coil is used, the simulation of eddy currents in a thick unflawed conducting plate has been carried out.

  3. Coherent Exciton Dynamics in GaAs-Based Semiconductor Structures

    Science.gov (United States)

    Colocci, M.; Bogani, F.; Ceccherini, S.; Gurioli, M.

    We show that a very powerful tool in the investigation of the coherent exciton dynamics in semiconductors is provided by the study of the emitted light after resonant excitation from pairs of phase-locked femtosecond pulses. Under these conditions, not only the full dynamics of the coherent transients (dephasing times, quantum beat periods, etc.) can be obtained from linear experiments, but it can also be obtained a straightforward discrimination between the coherent or incoherent character of the emission by means of spectral filtering.

  4. Phonon structures of GaN-based random semiconductor alloys

    Science.gov (United States)

    Zhou, Mei; Chen, Xiaobin; Li, Gang; Zheng, Fawei; Zhang, Ping

    2017-12-01

    Accurate modeling of thermal properties is strikingly important for developing next-generation electronics with high performance. Many thermal properties are closely related to phonon dispersions, such as sound velocity. However, random substituted semiconductor alloys AxB1-x usually lack translational symmetry, and simulation with periodic boundary conditions often requires large supercells, which makes phonon dispersion highly folded and hardly comparable with experimental results. Here, we adopt a large supercell with randomly distributed A and B atoms to investigate substitution effect on the phonon dispersions of semiconductor alloys systematically by using phonon unfolding method [F. Zheng, P. Zhang, Comput. Mater. Sci. 125, 218 (2016)]. The results reveal the extent to which phonon band characteristics in (In,Ga)N and Ga(N,P) are preserved or lost at different compositions and q points. Generally, most characteristics of phonon dispersions can be preserved with indium substitution of gallium in GaN, while substitution of nitrogen with phosphorus strongly perturbs the phonon dispersion of GaN, showing a rapid disintegration of the Bloch characteristics of optical modes and introducing localized impurity modes. In addition, the sound velocities of both (In,Ga)N and Ga(N,P) display a nearly linear behavior as a function of substitution compositions. Supplementary material in the form of one pdf file available from the Journal web page at http://https://doi.org/10.1140/epjb/e2017-80481-0.

  5. Electrical characterization of organic-on-inorganic semiconductor Schottky structures

    International Nuclear Information System (INIS)

    Guellue, Oe; Tueruet, A; Asubay, S

    2008-01-01

    We prepared a methyl red/p-InP organic-inorganic (OI) Schottky device formed by evaporation of an organic compound solution directly to a p-InP semiconductor wafer. The value of the optical band gap energy of the methyl red organic film on a glass substrate was obtained as 2.0 eV. It was seen that the Al/methyl red/p-InP contacts showed a good rectifying behavior. An ideality factor of 2.02 and a barrier height (Φ b ) of 1.11 eV for the Al/methyl red/p-InP contact were determined from the forward bias I-V characteristics. It was seen that the value of 1.11 eV obtained for Φ b for the Al/methyl red/p-InP contact was significantly larger than the value of 0.83 eV for conventional Al/p-InP Schottky diodes. Modification of the interfacial potential barrier for the Al/p-InP diode was achieved using a thin interlayer of the methyl red organic semiconductor. This ascribed to the fact that the methyl red interlayer increases the effective Φ b by influencing the space charge region of InP

  6. Interlayer exchange coupling, crystalline and magnetic structure in Fe/CsCl-FeSi multilayers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Dekoster, J.; Degroote, S.; Meersschaut, J.; Moons, R.; Vantomme, A. [K.U. Leuven, Instituut voor Kern- en Stralingsfysica (Belgium); Bottyan, L.; Deak, L.; Szilagyi, E.; Nagy, D.L. [KFKI Research Institute for Particle and Nuclear Physics (Hungary); Baron, A.Q.R. [European Synchrotron Radiation Facility (France); Langouche, G. [K.U. Leuven, Instituut voor Kern- en Stralingsfysica (Belgium)

    1999-09-15

    Crystalline and magnetic structure as well as the interlayer exchange coupling in MBE grown Fe/FeSi multilayers are investigated. From conversion electron Moessbauer spectroscopy and ion beam channeling measurements the spacer FeSi material is found to be stabilized in a crystalline metastable metallic FeSi phase with the CsCl structure. Strong non-oscillatory interlayer exchange coupling is identified with magnetometry and synchrotron Moessbauer reflectometry. From the fits of the time spectrum and the resonant {phi}-{phi} scans a model for the sublayer magnetization of the multilayer is deduced.

  7. Quantifying hidden defect in multi-layered structures by using eddy current system combined with a scanner

    International Nuclear Information System (INIS)

    Huang Pingjie; Zhou Zekui; Wu Zhaotong

    2005-01-01

    The eddy current testing forward model of scanning inspection of multi-layered structures is introduced and simulation work is carried out to reveal the interaction between the scanning coil and defects with different geometric properties. A multi-frequency ECT experimental instrument combined with a scanner is established and scanning inspections are performed to detect the artificial etched flaws with different geometric parameters in the multi-layered structures. The predicted signals by the forward model are compared with the measured signals and the defects are characterized

  8. X-ray refractive index: A tool to determine the average composition in multilayer structures

    International Nuclear Information System (INIS)

    Miceli, P.F.; Neumann, D.A.; Zabel, H.

    1986-01-01

    We present a novel and simple method to determine the average composition of multilayers and superlattices by measuring the x-ray refractive index. Since these modulated structures exhibit Bragg reflections at small angles, by using a triple axis x-ray spectrometer we have accurately determined the peak shifts due to refraction in GaAs/Al/sub x/Ga/sub 1-x/As and Nb/Ta superlattices. Knowledge of the refractive index provides the average fractional composition of the periodic structure since the refractive index is a superposition of the refractive indices of the atomic constituents. We also present a critical discussion of the method and compare the values of the average fractional composition obtained in this manner to the values obtained from the lattice parameter change in the GaAs/Al/sub x/Ga/sub 1-x/As superlattices due to the Al

  9. Echo simulation of lunar penetrating radar: based on a model of inhomogeneous multilayer lunar regolith structure

    International Nuclear Information System (INIS)

    Dai Shun; Su Yan; Xiao Yuan; Feng Jian-Qing; Xing Shu-Guo; Ding Chun-Yu

    2014-01-01

    Lunar Penetrating Radar (LPR) based on the time domain Ultra-Wideband (UWB) technique onboard China's Chang'e-3 (CE-3) rover, has the goal of investigating the lunar subsurface structure and detecting the depth of lunar regolith. An inhomogeneous multi-layer microwave transfer inverse-model is established. The dielectric constant of the lunar regolith, the velocity of propagation, the reflection, refraction and transmission at interfaces, and the resolution are discussed. The model is further used to numerically simulate and analyze temporal variations in the echo obtained from the LPR attached on CE-3's rover, to reveal the location and structure of lunar regolith. The thickness of the lunar regolith is calculated by a comparison between the simulated radar B-scan images based on the model and the detected result taken from the CE-3 lunar mission. The potential scientific return from LPR echoes taken from the landing region is also discussed

  10. Echo simulation of lunar penetrating radar: based on a model of inhomogeneous multilayer lunar regolith structure

    Science.gov (United States)

    Dai, Shun; Su, Yan; Xiao, Yuan; Feng, Jian-Qing; Xing, Shu-Guo; Ding, Chun-Yu

    2014-12-01

    Lunar Penetrating Radar (LPR) based on the time domain Ultra-Wideband (UWB) technique onboard China's Chang'e-3 (CE-3) rover, has the goal of investigating the lunar subsurface structure and detecting the depth of lunar regolith. An inhomogeneous multi-layer microwave transfer inverse-model is established. The dielectric constant of the lunar regolith, the velocity of propagation, the reflection, refraction and transmission at interfaces, and the resolution are discussed. The model is further used to numerically simulate and analyze temporal variations in the echo obtained from the LPR attached on CE-3's rover, to reveal the location and structure of lunar regolith. The thickness of the lunar regolith is calculated by a comparison between the simulated radar B-scan images based on the model and the detected result taken from the CE-3 lunar mission. The potential scientific return from LPR echoes taken from the landing region is also discussed.

  11. Surface and interfacial structural characterization of MBE grown Si/Ge multilayers

    International Nuclear Information System (INIS)

    Saha, Biswajit; Sharma, Manjula; Sarma, Abhisakh; Rath, Ashutosh; Satyam, P.V.; Chakraborty, Purushottam; Sanyal, Milan K.

    2009-01-01

    Si/Ge multilayer structures have been grown by solid source molecular beam epitaxy (MBE) on Si (1 1 1) and (1 0 0) substrates and were characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), high-depth-resolution secondary ion mass spectroscopy (SIMS) and cross-section high-resolution transmission electron microscopy (HRTEM). A reasonably good agreement has been obtained for layer thickness, interfacial structure and diffusion between SIMS and HRTEM measurements. Epitaxial growth and crystalline nature of the individual layer have been probed using cross-sectional HRTEM and XRD measurements. Surface and interface morphological studies by AFM and HRTEM show island-like growth of both Si and Ge nanostructures.

  12. Structural and magnetic properties of ion-beam bombarded Co/Pt multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Lin, K.W.; Guo, J.Y.; Lin, S.R.; Ouyang, H. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402 (China); Tsai, C.J. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300 (China); Van Lierop, J. [Department of Physics and Astronomy, University of Manitoba, Winnipeg (Canada); Phuoc, N.N.; Suzuki, T. [Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)

    2007-12-15

    A series of [Pt(2 nm)/Co(2 nm)]{sub 10}/Pt(30 nm) multilayers were deposited by using an ion-beam technique. X-ray diffraction and transmission electron microscopy results have shown that as-deposited samples consist of h.c.p. Co and f.c.c. Pt phases. Disordered CoPt{sub 3} phases were developed with increasing End-Hall voltage (V{sub EH}) that induces greater ion-beam bombardment energy during deposition. This indicates that intermixing of Co and Pt increases with ion-beam bombardment. The coercivities (ranging from 100 Oe to 300 Oe) of Co/Pt multilayers decreased with increasing V{sub EH}. After annealing, the formation of CoPt{sub 3} was observed in these ion-beam bombarded samples, resulting in lower coercivities (H{sub c}{proportional_to} 50 Oe). The depressed transition temperature of CoPt{sub 3} for films deposited with the largest V{sub EH} was attributed to distorted CoPt{sub 3} structures that appeared with annealing. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

    International Nuclear Information System (INIS)

    Sibatov, R. T.; Morozova, E. V.

    2015-01-01

    A model of dispersive transport in disordered nanostructured semiconductors has been proposed taking into account the percolation structure of a sample and joint action of several mechanisms. Topological and energy disorders have been simultaneously taken into account within the multiple trapping model on a comb structure modeling the percolation character of trajectories. The joint action of several mechanisms has been described within random walks with a mixture of waiting time distributions. Integral transport equations with fractional derivatives have been obtained for an arbitrary density of localized states. The kinetics of the transient current has been calculated within the proposed new model in order to analyze time-of-flight experiments for nanostructured semiconductors

  14. Structure and tribological behavior of Pb-Ti/MoS2 nanoscaled multilayer films deposited by magnetron sputtering method

    Science.gov (United States)

    Li, Hao; Xie, Mingling; Zhang, Guangan; Fan, Xiaoqiang; Li, Xia; Zhu, Minhao; Wang, Liping

    2018-03-01

    The Pb-Ti/MoS2 nanoscaled multilayer films with different bilayer period were deposited by unbalanced magnetron sputtering system. The morphology, microstructure, mechanical and tribological properties of the films were investigated. It was found that the film changed from multilayer structure to composite structure as the bilayer period decreased from 25 nm to 6 nm, due to the diffusion effect. The multilayer film showed a pronounced (002) diffraction peak, the growth of the MoS2 platelets below the interface were affected by Pb and Ti, and the c-axis of MoS2 platelets were inclined to the substrate at an angle of -30° to 30°. The hardness of the film ranged from 5.9 to 7.2 GPa depending on the bilayer period. The tribological behavior of the films was performed under vacuum, and the friction coefficient were typically below 0.25. Furthermore, the nanoscale multilayer film with a bilayer period of 20 nm exhibits much better mechanical and tribological properties than pure MoS2. The result indicates that the nanoscale multilayer is a design methodology for developing high basal plane oriented and vacuum solid lubricating MoS2 based materials.

  15. Synthesis and optical properties of novel organic-inorganic hybrid nanolayer structure semiconductors

    International Nuclear Information System (INIS)

    Zhang Sanjun; Lanty, Gaetan; Lauret, Jean-Sebastien; Deleporte, Emmanuelle; Audebert, Pierre; Galmiche, Laurent

    2009-01-01

    We report on the synthesis of some novel organic-inorganic hybrid 2D perovskite semiconductors (R-(CH 2 ) n NH 3 ) 2 PbX 4 . These semiconductors are self-assembled intercalation nanolayers and have a multi-quantum-well energy level structure. We systematically vary the characteristic of organic groups (R-(CH 2 ) n NH 3 + ) to study the relationship between their structures and the optical properties of (R-(CH 2 ) n NH 3 ) 2 PbX 4 . From optical absorption and photoluminescence spectroscopy experiments performed on series of samples, we find some trends of choosing the organic groups to improve the optical performance of (R-(CH 2 ) n NH 3 ) 2 PbX 4 . A new organic group, which allows synthesis of nanolayer perovskite semiconductors with quite high photoluminescence efficiency and better long-term stability, has been found.

  16. Electromagnetic waves in irregular multilayered spheroidal structures of finite conductivity: full wave solutions

    International Nuclear Information System (INIS)

    Bahar, E.

    1976-01-01

    The propagation of electromagnetic waves excited by electric dipoles oriented along the axis of multilayered spheroidal structures of finite conductivity is investigated. The electromagnetic parameters and the thickness of the layers of the structure are assumed to be functions of the latitude. In the analysis, electric and magnetic field transforms that constitute a discrete and a continuous spectrum of spherical waves are used to provide a suitable basis for the expansion of the electromagnetic fields at any point in the irregular spheroidal structure. For spheroidal structures with good conducting cores, the terms in the solutions associated with the continuous part of the wave spectrum vanish. In general, however, when the skin depth for the core is large compared to its dimensions or when the sources are located in the core of the structure and propagation in the core is of special interest, the contribution from the continuous part of the wave spectrum cannot be neglected. At each interface between the layers of the irregular spheroidal structure, exact boundary conditions are imposed. Since the terms of the field expansions in the irregular structure do not individually satisfy the boundary conditions, Maxwell's equations are reduced to sets of coupled ordinary first-order differential equations for the wave amplitudes. The solutions are shown to satisfy the reciprocity relationships in electromagnetic theory. The analysis may be applied to problems of radio wave propagation in a nonuniform model of the earth-ionosphere waveguide, particularly when focusing effects at the antipodes are important

  17. Design of the algorithm of photons migration in the multilayer skin structure

    Science.gov (United States)

    Bulykina, Anastasiia B.; Ryzhova, Victoria A.; Korotaev, Valery V.; Samokhin, Nikita Y.

    2017-06-01

    Design of approaches and methods of the oncological diseases diagnostics has special significance. It allows determining any kind of tumors at early stages. The development of optical and laser technologies provided increase of a number of methods allowing making diagnostic studies of oncological diseases. A promising area of biomedical diagnostics is the development of automated nondestructive testing systems for the study of the skin polarizing properties based on backscattered radiation detection. Specification of the examined tissue polarizing properties allows studying of structural properties change influenced by various pathologies. Consequently, measurement and analysis of the polarizing properties of the scattered optical radiation for the development of methods for diagnosis and imaging of skin in vivo appear relevant. The purpose of this research is to design the algorithm of photons migration in the multilayer skin structure. In this research, the algorithm of photons migration in the multilayer skin structure was designed. It is based on the use of the Monte Carlo method. Implemented Monte Carlo method appears as a tracking the paths of photons experiencing random discrete direction changes before they are released from the analyzed area or decrease their intensity to negligible levels. Modeling algorithm consists of the medium and the source characteristics generation, a photon generating considering spatial coordinates of the polar and azimuthal angles, the photon weight reduction calculating due to specular and diffuse reflection, the photon mean free path definition, the photon motion direction angle definition as a result of random scattering with a Henyey-Greenstein phase function, the medium's absorption calculation. Biological tissue is modeled as a homogeneous scattering sheet characterized by absorption, a scattering and anisotropy coefficients.

  18. NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

    International Nuclear Information System (INIS)

    Reshak, A.H.; Khan, Saleem Ayaz; Kamarudin, H.; Bila, Jiri

    2014-01-01

    Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor

  19. NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Khan, Saleem Ayaz, E-mail: sayaz_usb@yahoo.com [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Kamarudin, H. [Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bila, Jiri [Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, 166 07 Prague 6 (Czech Republic)

    2014-01-05

    Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor.

  20. Structure, properties and wear behaviour of multilayer coatings consisting of metallic and covalent hard materials, prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Schier, V.

    1995-12-01

    Novel multilayer coatings with metallic and covalent layer materials were prepared by magnetron sputtering and characterised concerning structure, properties and application behaviour. At first single layer coatings were deposited for the determination of the material properties. To evaluate relations between structure and properties of the multilayer coatings, different multilayer concepts were realised: - coatings consisting of at most 7 layers of metallic hard materials, - 100-layer coatings consisting of metallic and covalent hard materials, - TiN-TiC multilayer coatings with different numbers of layers (between 10 and 1000), - 150-layer coatings, based on TiN-TiC multilayers, with thin ( 4 C, AlN, SiC, a:C, Si 3 N 4 , SiAlON). X-rays and electron microscopic analysis indicate in spite of nonstoichiometric compositions single phase crystalline structures for nonreactively and reactively sputtered metastable single layer Ti(B,C)-, Ti(B,N)- and Ti(B,C,N)-coatings. These single layer coatings show excellent mechanical properties (e.g. hardness values up to 6000 HV0,05), caused by lattice stresses as well as by atomic bonding conditions similar to those in c:BN and B 4 C. The good tribological properties shown in pin-on-disk-tests can be attributed to the very high hardness of the coatings. The coatings consisting of at most 7 layers of metallic hard materials show good results mainly for the cutting of steel Ck45, due to the improved mechanical properties (e.g. hardness, toughness) of the multilayers compared to the single layer coatings. This improvement is caused by inserting the hard layer materials and the coherent reinforcement of the coatings. (orig.)

  1. Efficient Model Order Reduction for the Dynamics of Nonlinear Multilayer Sheet Structures with Trial Vector Derivatives

    Directory of Open Access Journals (Sweden)

    Wolfgang Witteveen

    2014-01-01

    Full Text Available The mechanical response of multilayer sheet structures, such as leaf springs or car bodies, is largely determined by the nonlinear contact and friction forces between the sheets involved. Conventional computational approaches based on classical reduction techniques or the direct finite element approach have an inefficient balance between computational time and accuracy. In the present contribution, the method of trial vector derivatives is applied and extended in order to obtain a-priori trial vectors for the model reduction which are suitable for determining the nonlinearities in the joints of the reduced system. Findings show that the result quality in terms of displacements and contact forces is comparable to the direct finite element method but the computational effort is extremely low due to the model order reduction. Two numerical studies are presented to underline the method’s accuracy and efficiency. In conclusion, this approach is discussed with respect to the existing body of literature.

  2. Emergence of a multilayer structure in adaptive networks of phase oscillators

    International Nuclear Information System (INIS)

    Makarov, V.V.; Koronovskii, A.A.; Maksimenko, V.A.; Hramov, A.E.; Moskalenko, O.I.; Buldú, J.M.; Boccaletti, S.

    2016-01-01

    We report on self-organization of adaptive networks, where topology and dynamics evolve in accordance to a competition between homophilic and homeostatic mechanisms, and where links are associated to a vector of weights. Under an appropriate balance between the intra- and inter- layer coupling strengths, we show that a multilayer structure emerges due to the adaptive evolution, resulting in different link weights at each layer, i.e. different components of the weights’ vector. In parallel, synchronized clusters at each layer are formed, which may overlap or not, depending on the values of the coupling strengths. Only when intra- and inter- layer coupling strengths are high enough, all layers reach identical final topologies, collapsing the system into, in fact, a monolayer network. The relationships between such steady state topologies and a set of dynamical network’s properties are discussed.

  3. Local atomic structure of Fe/Cr multilayers: Depth-resolved method

    Science.gov (United States)

    Babanov, Yu. A.; Ponomarev, D. A.; Devyaterikov, D. I.; Salamatov, Yu. A.; Romashev, L. N.; Ustinov, V. V.; Vasin, V. V.; Ageev, A. L.

    2017-10-01

    A depth-resolved method for the investigation of the local atomic structure by combining data of X-ray reflectivity and angle-resolved EXAFS is proposed. The solution of the problem can be divided into three stages: 1) determination of the element concentration profile with the depth z from X-ray reflectivity data, 2) determination of the X-ray fluorescence emission spectrum of the element i absorption coefficient μia (z,E) as a function of depth and photon energy E using the angle-resolved EXAFS data Iif (E , ϑl) , 3) determination of partial correlation functions gij (z , r) as a function of depth from μi (z , E) . All stages of the proposed method are demonstrated on a model example of a multilayer nanoheterostructure Cr/Fe/Cr/Al2O3. Three partial pair correlation functions are obtained. A modified Levenberg-Marquardt algorithm and a regularization method are applied.

  4. Highly conductive and flexible color filter electrode using multilayer film structure

    Science.gov (United States)

    Han, Jun Hee; Kim, Dong-Young; Kim, Dohong; Choi, Kyung Cheol

    2016-07-01

    In this paper, a high performance flexible component that serves as a color filter and an electrode simultaneously is suggested. The suggested highly conductive and flexible color filter electrode (CFE) has a multilayer film structure composed of silver (Ag) and tungsten trioxide (WO3). The CFE maintained its color filtering capability even when the films were bent on a polyethylene terephthalate (PET) film. Low sheet resistance of the CFE was obtained using WO3 as a bridge layer that connects two Ag layers electrically. The sheet resistance was less than 2 Ω/sq. and it was negligibly changed after bending the film, confirming the flexibility of the CFE. The CFE can be easily fabricated using a thermal evaporator and is easily patterned by photolithography or a shadow mask. The proposed CFE has enormous potential for applications involving optical devices including large area devices and flexible devices.

  5. Computation of the optical properties and their first order derivatives for multilayer structures

    International Nuclear Information System (INIS)

    Abu El-Haija, A.J.; Omari, H.Y.

    1985-08-01

    An elaborate computer programme has been established for calculating the optical properties and their first order derivatives for arbitrary multilayer structure systems. The method employs Chebychev polynomials. The optical properties that may be calculated include reflectivity R, transmissivity T, absorptivity A and their derivatives R', T' and A' with respect to wavelength. The obtained values of R, T and A as calculated by this method were compared with their values calculated from direct multiplication of matrices using the characteristic transfer technique. The advantages of the present programme over the previous one reside in the reduction of the computer time by almost a factor of m, the total number of identity periods, and the advantage of calculating the derivatives of R, T and A with respect to wavelength. The basic formulas which are utilized in these calculations are given together with the essential details of the programme, including a block diagram. (author)

  6. Design of a wideband multilayer grating spectrometer for the study of electronic structure of thin-film CIS solar cells

    International Nuclear Information System (INIS)

    Imazono, Takashi; Koike, Masato; Kuramoto, Satoshi; Nagano, Tetsuya; Koeda, Masaru; Moriya, Naoji

    2014-01-01

    A soft x-ray emission spectrometer equipped with a wideband Ni/C multilayer-coated laminar-type varied-line-spacing holographic grating is designed to analyze the electronic structure in thin-film copper indium selenide (CIS) solar cells nondestructively by soft x-ray emission spectroscopy. The spectrometer equipped with the multilayer grating thus designed allows us to detect the L emission lines of Cu, In, and Se simultaneously from a CIS absorber layer in the 1–3.5 keV range at a constant angle of incidence. (author)

  7. Extraction of optical scattering parameters and attenuation compensation in optical coherence tomography images of multi-layered tissue structures

    DEFF Research Database (Denmark)

    Thrane, Lars; Frosz, Michael Henoch; Tycho, Andreas

    2004-01-01

    A recently developed analytical optical coherence tomography (OCT) model [Thrane et al., J. Opt. Soc. Am. A 17, 484 (2000)] allows the extraction of optical scattering parameters from OCT images, thereby permitting attenuation compensation in those images. By expanding this theoretical model, we...... have developed a new method for extracting optical scattering parameters from multilayered tissue structures in vivo. To verify this, we used a Monte Carlo (MC) OCT model as a numerical phantom to simulate the OCT signal for het-erogeneous multilayered tissue. Excellent agreement between the extracted......, and the results hold promise for expanding the functional imaging capabilities of OCT....

  8. Numerical simulation of SPH for dynamics effect of multilayer discontinuous structure irradiated by impulse X-ray

    International Nuclear Information System (INIS)

    Xu Binbin; Tang Wenhui; Ran Xianwen; Xu Zhihong; Chen Hua

    2012-01-01

    When high energy X-ray irradiates material, it will cause energy deposition in materials, and generates thermal shock wave. At present, finite difference method is used to the numerical simulation of thermal shock usually, but if considering the inter-space between the multilayer materials, the difference method will be more difficult. This paper used the SPH method to simulate multilayer discontinuous structure irradiated by high energy X-ray, and the results show that the gap between the materials of each layer has a certain influence on the thermal shock wave intensity, but doesn't have any affect to gasification impulse. (authors)

  9. Structural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures

    International Nuclear Information System (INIS)

    Manna, U.; Noyan, I. C.; Neumark, G. F.; Zhang, Q.; Moug, R.; Salakhutdinov, I. F.; Dunn, K. A.; Novak, S. W.; Tamargo, M. C.; Kuskovsky, I. L.

    2012-01-01

    We report the structural properties and spatial ordering of multilayer ZnMgTe quantum dots (QDs) embedded in ZnSe, where sub-monolayer quantities of Mg were introduced periodically during growth in order to reduce the valence band offset of ZnTe QDs. The periodicity, period dispersion, individual layer thickness, and the composition of the multilayer structures were determined by comparing the experimental high resolution x-ray diffraction (HRXRD) spectra to simulated ones for the allowed (004) and quasi-forbidden (002) reflections in combination with transmission electron microscopy (TEM) results. Secondary ion mass spectroscopy (SIMS) profiles confirmed the incorporation of Mg inside the QD layers, and the HRXRD analysis revealed that there is approximately 32% Mg in the ZnMgTe QDs. The presence of Mg contributes to higher scattering intensity of the HRXRD, leading to the observation of higher order superlattice peaks in both the (004) and (002) reflections. The distribution of scattered intensity in the reciprocal space map (RSM) shows that the diffuse scattered intensity is elongated along the q x axis, indicating a vertical correlation of the dots, which is found to be less defined for the sample with larger periodicity. The diffuse scattered intensity is also found to be weakly correlated along the q z direction indicating a weak lateral correlation of the dots.

  10. Phase constitution and interface structure of nano-sized Ag-Cu/AlN multilayers: Experiment and ab initio modeling

    Energy Technology Data Exchange (ETDEWEB)

    Pigozzi, Giancarlo; Janczak-Rusch, Jolanta; Passerone, Daniele; Antonio Pignedoli, Carlo; Patscheider, Joerg; Jeurgens, Lars P. H. [Empa, Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, CH-8600 Duebendorf (Switzerland); Antusek, Andrej [Empa, Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, CH-8600 Duebendorf (Switzerland); Faculty of Materials Science and Technology, Slovak University of Technology in Bratislava, Paulinska 16, 917 24 Trnava (Slovakia); Parlinska-Wojtan, Magdalena [Empa, Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, CH-8600 Duebendorf (Switzerland); University of Rzeszow, Institute of Physics, ul. Rejtana 16a, 35-959 Rzeszow (Poland); Bissig, Vinzenz [Kirsten Soldering AG, Hinterbergstrasse 32, CH-6330 Cham (Switzerland)

    2012-10-29

    Nano-sized Ag-Cu{sub 8nm}/AlN{sub 10nm} multilayers were deposited by reactive DC sputtering on {alpha}-Al{sub 2}O{sub 3}(0001) substrates. Investigation of the phase constitution and interface structure of the multilayers evidences a phase separation of the alloy sublayers into nanosized grains of Ag and Cu. The interfaces between the Ag grains and the quasi-single-crystalline AlN sublayers are semi-coherent, whereas the corresponding Cu/AlN interfaces are incoherent. The orientation relationship between Ag and AlN is constant throughout the entire multilayer stack. These observations are consistent with atomistic models of the interfaces as obtained by ab initio calculations.

  11. Electronic structures of interfacial states formed at polymeric semiconductor heterojunctions

    Science.gov (United States)

    Huang, Ya-Shih; Westenhoff, Sebastian; Avilov, Igor; Sreearunothai, Paiboon; Hodgkiss, Justin M.; Deleener, Caroline; Friend, Richard H.; Beljonne, David

    2008-06-01

    Heterojunctions between organic semiconductors are central to the operation of light-emitting and photovoltaic diodes, providing respectively for electron-hole capture and separation. However, relatively little is known about the character of electronic excitations stable at the heterojunction. We have developed molecular models to study such interfacial excited electronic excitations that form at the heterojunction between model polymer donor and polymer acceptor systems: poly(9,9-dioctylfluorene-co-bis-N,N-(4-butylphenyl)-bis-N,N-phenyl-1,4-phenylenediamine) (PFB) with poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT), and poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB) with F8BT. We find that for stable ground-state geometries the excited state has a strong charge-transfer character. Furthermore, when partly covalent, modelled radiative lifetimes (~10-7s) and off-chain axis polarization (30∘) match observed `exciplex' emission. Additionally for the PFB:F8BT blend, geometries with fully ionic character are also found, thus accounting for the low electroluminescence efficiency of this system.

  12. Unusual ZFC and FC magnetic behavior in thin Co multi-layered structure

    Energy Technology Data Exchange (ETDEWEB)

    Ben-Dor, Oren; Yochelis, Shira [Department of Applied Physics, Center of Nanoscience and Nanotechnology, Hebrew University, Jerusalem 91904 (Israel); Felner, Israel [Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel); Paltiel, Yossi [Department of Applied Physics, Center of Nanoscience and Nanotechnology, Hebrew University, Jerusalem 91904 (Israel)

    2017-04-15

    The observation of unusual magnetic phenomena in a Ni -based magnetic memory device ( O. Ben-Dor et al., 2013) encouraged us to conduct a systematic research on Co based multi-layered structure which contains a α-helix L polyalanine (AHPA-L) organic compound. The constant Co thickness is 7 nm and AHPA-L was also replaced by non-chiral 1-Decanethiol organic molecules. Both organic compounds were chemisorbed on gold by a thiol group. The dc magnetic field (H) was applied parallel and perpendicular to the surface layers. The perpendicular direction is the easy magnetization axis and along this orientation only, the zero-field-cooled (ZFC) plots exhibit a pronounced peak around 55–58 K. This peak is suppressed in the second ZFC and field-cooled (FC) runs performed shortly after the virgin ZFC one. Thus, around the peak position ZFC>FC a phenomenon seldom observed. This peak reappears after measuring the same material six months later. This behavior appears in layers with the non-chiral 1-Decanethiol and it is very similar to that obtained in sulfur doped amorphous carbon. The peak origin and the peculiar ZFC>FC case are qualitatively explained. - Highlights: • FC curve crosses ZFC curve in a 7 nm Co and thiol-based organic molecules multi-layered structure. • The ZFC>FC phenomena occurs for H perpendicular along the easy axis. • This phenomenon disappears in the second FC-ZFC run performed shortly after. • The unusual behavior reappears after six months.

  13. Carrier-carrier relaxation kinetics in quantum well semiconductor structures with nonparabolic energy bands

    DEFF Research Database (Denmark)

    Dery, H.; Tromborg, Bjarne; Eisenstein, G.

    2003-01-01

    We describe carrier-carrier scattering dynamics in an inverted quantum well structure including the nonparabolic nature of the valance band. A solution of the semiconductor Bloch equations yields strong evidence to a large change in the temporal evolution of the carrier distributions compared to ...

  14. Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning

    Science.gov (United States)

    Schlesinger, R.; Bianchi, F.; Blumstengel, S.; Christodoulou, C.; Ovsyannikov, R.; Kobin, B.; Moudgil, K.; Barlow, S.; Hecht, S.; Marder, S.R.; Henneberger, F.; Koch, N.

    2015-01-01

    The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach. PMID:25872919

  15. Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning.

    Science.gov (United States)

    Schlesinger, R; Bianchi, F; Blumstengel, S; Christodoulou, C; Ovsyannikov, R; Kobin, B; Moudgil, K; Barlow, S; Hecht, S; Marder, S R; Henneberger, F; Koch, N

    2015-04-15

    The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach.

  16. Compton imaging tomography for nondestructive evaluation of large multilayer aircraft components and structures

    Science.gov (United States)

    Romanov, Volodymyr; Grubsky, Victor; Zahiri, Feraidoon

    2017-02-01

    We present a novel NDT/NDE tool for non-contact, single-sided 3D inspection of aerospace components, based on Compton Imaging Tomography (CIT) technique, which is applicable to large, non-uniform, and/or multilayer structures made of composites or lightweight metals. CIT is based on the registration of Compton-scattered X-rays, and permits the reconstruction of the full 3D (tomographic) image of the inspected objects. Unlike conventional computerized tomography (CT), CIT requires only single-sided access to objects, and therefore can be applied to large structures without their disassembly. The developed tool provides accurate detection, identification, and precise 3D localizations and measurements of any possible internal and surface defects (corrosions, cracks, voids, delaminations, porosity, and inclusions), and also disbonds, core and skin defects, and intrusion of foreign fluids (e.g., fresh and salt water, oil) inside of honeycomb sandwich structures. The NDE capabilities of the system were successfully demonstrated on various aerospace structure samples provided by several major aerospace companies. Such a CIT-based tool can detect and localize individual internal defects with dimensions about 1-2 mm3, and honeycomb disbond defects less than 6 mm by 6 mm area with the variations in the thickness of the adhesive by 100 m. Current maximum scanning speed of aircraft/spacecraft structures is about 5-8 min/ft2 (50-80 min/m2).

  17. Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S.

    1998-01-01

    Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors

  18. Compositional and structural studies of ion-beam modified AlN/TiN multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Amati, M., E-mail: matteo.amati@elettra.eu [Elettra – Sincrotrone Trieste SCpA,Area Science Park, 34149, Trieste (Italy); Gregoratti, L.; Sezen, H. [Elettra – Sincrotrone Trieste SCpA,Area Science Park, 34149, Trieste (Italy); Grce, A.; Milosavljević, M. [VINČA Institute of Nuclear Sciences, Belgrade University, P.O. Box 522, 11001, Belgrade (Serbia); Homewood, K.P. [Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, E1 4NS, London (United Kingdom)

    2017-07-31

    Highlights: • Inter-layer mixing, atomic redistribution, structural change, and phase transformation on AlN/TiN multilayers via argon ion irradiation. • Severe modifications are observed with TEM studies on highly immiscible alternating layers without any side effects such as beam heating. • The original TiN layers appear to grow in thickness by consuming the adjacent AlN layers, while obtaining a better TiAlN fcc crystalline structure. • Photoemission spectroscopy/microscopy indicates a transformation into Al deficient ternary and highly homogeneous compounds on both layers. • These results can be interesting towards further development of radiation tolerant materials based on immiscible ceramic nanocomposites. - Abstract: This paper reports on compositional and structural modifications induced in coated AlN/TiN multilayers by argon ion irradiation. The initial structure consisting of totally 30 alternate AlN (8 nm thick) and TiN (9.3 nm thick) layers was deposited on Si (100) wafers, by reactive sputtering. Irradiation was done with 180 keV Ar{sup +} to a high dose of 8 × 10{sup 16} ions/cm{sup 2}, which introduces up to ∼10 at.% of argon species, and generates a maximum displacement per atom of 92 for AlN and 127 for TiN, around the projected ion range (109 ± 34 nm). Characterizations were performed by Rutherford backscattering spectrometry, spatially resolved x-ray photoelectron spectroscopy, and transmission electron microscopy. The obtained results reveal that this highly immiscible and thermally stable system suffered a severe modification upon the applied ion irradiation, although it was performed at room temperature. They illustrate a thorough inter-layer mixing, atomic redistribution, structural change and phase transformation within the affected depth. The original TiN layers appear to grow in thickness, consuming the adjacent AlN layers, while retaining the fcc crystalline structure. In the mostly affected region, the interaction proceeds

  19. Investigation of porosity and fractal properties of the sintered metal and semiconductor layers in the MDS capacitor structure

    Directory of Open Access Journals (Sweden)

    Skatkov Leonid

    2012-01-01

    Full Text Available MDS capacitor (metal - dielectric - semiconductor is a structure in which metal plate is represented by compact bulk-porous pellets of niobium sintered powder, and semiconductor plate - by pyrolytic layer of MnO2. In the present paper we report the results of investigation of microporosity of sintered Nb and pyrolytic MnO2 and also the fractal properties of semiconductor layer.

  20. Structural study of the AlP, GaAs and AlAs semiconductors with wurtzite structure

    International Nuclear Information System (INIS)

    Bautista H, A.; Perez A, L.; Pal, U.; Rivas S, J.F.

    2003-01-01

    In this work we present ab initio calculations of optimization geometries, lattice constant and electronic structure for semiconductors wurtzite type, like AIN, CdS, Zn S, Zn Se, Ga N and GaAs. For this, we used the CASTEP program of CERUIS with LDA and GGA approximations, in the framework of Functional Density Theory. The used pseudopotentials are available in that program and were generated using the optimization scheme of Troullier-Martins. With the lattice constant just optimized, we calculate then the X-ray spectra for studied semiconductors.We analyzed the effect of used pseudopotentials on function of the results obtained. Finally, we predicted the geometry and X-ray pattern for AIP, AlAs and GaAs with wurtzite structure, giving evidence about the semiconductor character of these materials. (Author)

  1. Optical and electrical properties of structured multilayer with tunable transparency rate

    International Nuclear Information System (INIS)

    Bou, Adrien; Torchio, Philippe; Barakel, Damien; Guillou, Aurélie; Thoulon, Pierre-Yves; Ricci, Marc; Ayachi, Boubakeur

    2015-01-01

    An experimental study has been carried out on structured multilayer with tunable transparency rate. In this paper, we present the optical and electrical characterization of an oxide | metal | oxide structured electrode manufactured by e-beam deposition and patterned by a lift-off process. The obtained samples are made of grids with different geometrical parameters that lead to varying surface coverage rate on glass. The electrical and optical parameters of SnO x |Ag|SnO x grids are investigated to determine the efficiency, sustainability and limitations of such structures. A linear relationship between the transmittance of the electrodes and the increase of the surface coverage rate is obtained. Coupled to an optimization process, we are able to define a high transparency in a chosen spectral range. Electrical results show a relative stability of the resistivity from 2.9   ×   10   −  4  Ω.cm for an as-grown electrode to 5.6   ×   10   −  4  Ω.cm for a structured electrode with a surface coverage rate of 59%. (paper)

  2. The Effect of Temperature Treatment on the Structure of Polyelectrolyte Multilayers

    Directory of Open Access Journals (Sweden)

    Maximilian Zerball

    2016-04-01

    Full Text Available The study addresses the effect of thermal treatment on the internal structure of polyelectrolyte multilayers (PEMs. In order to get insight into the internal structure of PEMs, Neutron Reflectometry (NR was used. PEMs with a deuterated inner block towards the substrate and a non-deuterated outer block were prepared and measured in 1% RH and in D2O before and after a thermal treatment. Complementarily, PEMs with the same number of layers but completely non-deuterated were investigated by ellipsometry. The analysis for the overall thickness (d, the average scattering length density (SLD and the refractive index (n indicate a degradation of the PEM. The loss in material is independent of the number of layers, i.e., only a constant part of the PEM is affected by degradation. The analysis of the internal structure revealed a more complex influence of thermal treatment on PEM structure. Only the outermost part of the PEM degenerates, while the inner part becomes denser during the thermal treatment. In addition, the swelling behavior of PEMs is influenced by the thermal treatment. The untreated PEM shows a well pronounced odd—even effect, i.e., PDADMAC-terminated PEMs take up more water than PSS-terminated PEMs. After the thermal treatment, the odd-even effect becomes much weaker.

  3. Interaction of femtosecond X-ray pulses with periodical multilayer structures

    International Nuclear Information System (INIS)

    Ksenzov, Dmitry

    2010-01-01

    The VUV Free Electron Laser FLASH operates in soft X-ray range and produces high-intensive pulse trains with few tens femtoseconds duration. The transversely fully coherent beam will open new experiments in solid state physics which can not be studied with present radiation sources. The study of the time dependent response of the multilayer to the X-ray pulse can provide insights into the process of interaction of highly intense FEL radiation with matter. To test the influence of electron excitation on the optical properties of boron carbide, the refractive index of B 4 C was measured near B K-edge by energy-resolved photon-in-photon-out method probing a Bragg reflection from periodical multilayers. The measured data clearly show that the variation of the fine structure of the Kabsorption edges due to the chemical nature of the absorber element. The knowledge obtained from experiments with continuous radiation was used to design the respective experiments with pulse from the FEL. In my thesis, it is proposed that the geometrical setup, where the incident pulse arrives from the FEL under the angle close to the 1st order ML Bragg peak, provides the most valuable information. Preliminary simulation considering form factors of neutral and ionized boron showed that due to ionization, pronounced changes in the reflectivity curve are expected. The proposed scheme can be the powerful tool to study the various processes within the electronic subsystem of the FEL pulse interaction with matter. This type of investigations gives a deep understanding of the nature of the electronic excitation and the recombination at the femtosecond scale. (orig.)

  4. Interaction of femtosecond X-ray pulses with periodical multilayer structures

    Energy Technology Data Exchange (ETDEWEB)

    Ksenzov, Dmitry

    2010-07-01

    The VUV Free Electron Laser FLASH operates in soft X-ray range and produces high-intensive pulse trains with few tens femtoseconds duration. The transversely fully coherent beam will open new experiments in solid state physics which can not be studied with present radiation sources. The study of the time dependent response of the multilayer to the X-ray pulse can provide insights into the process of interaction of highly intense FEL radiation with matter. To test the influence of electron excitation on the optical properties of boron carbide, the refractive index of B{sub 4}C was measured near B K-edge by energy-resolved photon-in-photon-out method probing a Bragg reflection from periodical multilayers. The measured data clearly show that the variation of the fine structure of the Kabsorption edges due to the chemical nature of the absorber element. The knowledge obtained from experiments with continuous radiation was used to design the respective experiments with pulse from the FEL. In my thesis, it is proposed that the geometrical setup, where the incident pulse arrives from the FEL under the angle close to the 1st order ML Bragg peak, provides the most valuable information. Preliminary simulation considering form factors of neutral and ionized boron showed that due to ionization, pronounced changes in the reflectivity curve are expected. The proposed scheme can be the powerful tool to study the various processes within the electronic subsystem of the FEL pulse interaction with matter. This type of investigations gives a deep understanding of the nature of the electronic excitation and the recombination at the femtosecond scale. (orig.)

  5. Structural and mechanical properties of titanium and titanium diboride monolayers and Ti/TiB2 multilayers

    International Nuclear Information System (INIS)

    Chu, K.; Lu, Y.H.; Shen, Y.G.

    2008-01-01

    Nano-multilayers represent a new class of engineering materials that are made up of alternating nanometer scale layers of two different components. In the present work a titanium (Ti) monolayer was combined with titanium diboride (TiB 2 ) to form a Ti/TiB 2 nano-multilayer. Designed experimental parameters enabled an evaluation of the effects of direct current bias voltage (U b ) and bilayer thickness (Λ) during multilayer deposition on the mechanical properties of reactively sputtered Ti/TiB 2 multilayer films. Their nanostructures and mechanical properties were characterized and analyzed using X-ray photoelectron spectroscopy (XPS), low-angle and high-angle X-ray diffraction (XRD), plan-view and cross-sectional high-resolution transmission electron microscopy (HRTEM), and microindentation measurements. Under the optimal bias voltage of U b = - 60 V, it was found that Λ (varied from 1.1 to 9.8 nm) was the most important factor which dominated the nanostructure and hardness. The hardness values obtained varied from 12 GPa for Ti and 15 GPa for TiB 2 monolayers, up to 33 GPa for the hardest Ti/TiB 2 multilayer at Λ = 1.9 nm. The observed hardness enhancement correlated to the layer thickness, followed a relation similar to the Hall-Petch strengthening dependence, with a generalized power of ∼ 0.6. In addition, the structural barriers between two materials (hcp Ti/amorphous TiB 2 ) and stress relaxation at interfaces within multilayer films resulted in a reduction of crack propagation and high-hardness

  6. POWER, METALLURGICAL AND CHEMICAL MECHANICAL ENGINEERING THERMOELECTRIC EVENTS IN LIGHT-EMITTING BIPOLAR SEMICONDUCTOR STRUCTURES

    Directory of Open Access Journals (Sweden)

    P. A. Magomedova

    2017-01-01

    Full Text Available Objective. The development of light-emitting bipolar semiconductor structures having a low level of parasitic heat release.Methods. A method for converting thermoelectric heat in bipolar semiconductor structures into optical radiation to divert the excess energy into the environment was developed. At the same time, the cooling effect on thermoelectric junctions remains. Instead of an inertial process of conductive or convective heat transfer, practically instantaneous heat removal from electronic components to the environment takes place.Results. As a result, light-emitting bipolar semiconductor structures will allow more powerful devices with greater speed and degree of integration to be created. It is possible to produce transparent LED matrices with a two-way arrangement of transparent solar cells and mirror metal electrodes along the perimeter. When current is applied, the LED matrix on one of the transitions will absorb thermal energy; on other electrodes, it will emit radiation that is completely recovered into electricity by means of transparent solar cells following repeated reflection between the mirror electrodes. The low efficiency of solar cells will be completely compensated for with the multiple passages of photons through these batteries.Conclusion. Light-emitting bipolar semiconductor structures will not only improve the reliability of electronic components in a wide range of performance characteristics, but also improve energy efficiency through the use of optical radiation recovery. Semiconductor thermoelectric devices using optical phenomena in conjunction with the Peltier effect allow a wide range of energy-efficient components of radio electronic equipment to be realised, both for discrete electronics and for microsystem techniques. Systems for obtaining ultra-low temperatures in order to achieve superconductivity are of particular value. 

  7. Nanomembrane structures having mixed crystalline orientations and compositions

    Science.gov (United States)

    Lagally, Max G.; Scott, Shelley A.; Savage, Donald E.

    2014-08-12

    The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.

  8. A multi-layer bioinspired design with evolution of shish-kebab structures induced by controlled periodical shear field

    Directory of Open Access Journals (Sweden)

    J. Zhang

    2013-04-01

    Full Text Available The crystallization of polymers, caused by flow fields in the melt, has been the subject of extensive studies for many years. In this study, we use periodical shear to induce polypropylene to form multi-layer structure, which is usually observed in plants. Two interesting points were found: firstly, the quest of mimicking natural structures was achieved by controlled periodical shear field; secondly, the evolution from nano to shish-kebab-like cylindrite structure was obtained in the multi-layer structure, which can be clarified by nuclei competition model. This study can be used to better understand the shear-induced crystallization of polymer. Here our intention is to place this new observation on the map, leaving a fuller presentation and discussion of the work to a future publication.

  9. Growth, structure, and performance of depth-graded W/Si multilayers for hard x-ray optics

    DEFF Research Database (Denmark)

    Windt, D.L.; Christensen, Finn Erland; Craig, W.W.

    2000-01-01

    that the dominant interface imperfection in these films is interfacial diffuseness; interfacial roughness is minimal (sigma(r)similar to 0.175 nm) in structures prepared under optimal conditions, but can increase under conditions in which the beneficial effects of energetic bombardment during growth are compromised......-graded W/Si multilayer structures, and high-resolution transmission electron microscopy (TEM) and selected area electron diffraction (SAED) to characterize the interface structure and layer morphology as a function of depth in an optimized depth-graded multilayer. From x-ray analysis we find interface......), and somewhat larger interface widths (i.e., sigma=0.35-0.4 nm) for structures grown at higher Ar pressures, higher background pressures, or with larger target-to-substrate distances. We find no variation in interface widths with magnetron power. Nonspecular x-ray reflectance analysis and TEM suggest...

  10. Influence of layer thickness on the structure and the magnetic properties of Co/Pd epitaxial multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Tobari, Kousuke, E-mail: tobari@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan); Ohtake, Mitsuru; Nagano, Katsumasa; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan)

    2012-03-15

    Co/Pd epitaxial multilayer films were prepared on Pd(111){sub fcc} underlayers hetero-epitaxially grown on MgO(111){sub B1} single-crystal substrates at room temperature by ultra-high vacuum RF magnetron sputtering. In-situ reflection high energy electron diffraction shows that the in-plane lattice spacing of Co on Pd layer gradually decreases with increasing the Co layer thickness, whereas that of Pd on Co layer remains unchanged during the Pd layer formation. The CoPd alloy phase formation is observed around the Co/Pd interface. The atomic mixing is enhanced for thinner Co and Pd layers in multilayer structure. With decreasing the Co and the Pd layer thicknesses and increasing the repetition number of Co/Pd multilayer film, stronger perpendicular magnetic anisotropy is observed. The relationships between the film structure and the magnetic properties are discussed. - Highlights: Black-Right-Pointing-Pointer Epitaxial Co/Pd multilayer films are prepared on Pd(111){sub fcc} underlayers. Black-Right-Pointing-Pointer Lattice strain in Co layer and CoPd-alloy formation are noted around the interface. Black-Right-Pointing-Pointer Magnetic property dependence on layer thickness is reported.

  11. Computational study of structures of yttria-stabilised zirconia/strontium titanate multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Cheah, Wei Li; Finnis, Mike [Imperial College London (United Kingdom)

    2012-07-01

    Growing interest in the field of functional oxide multilayered nano-heterostructures may be attributed to their unusual interfacial properties that are not yet fully understood. For instance, the nature of the unexpectedly high conductivity reported in a trilayer of 1-nm thick epitaxial yttria-stabilised zirconia (YSZ) film sandwiched between strontium titanate (STO) layers still remains controversial. In an effort to investigate the source of conductivity in this system, we first establish an unexpected YSZ lattice within such hetero-system using a combination of techniques - a genetic algorithm in which the interatomic forces are described by classical pair potentials, and a pseudo-potential-based DFT method as implemented in the plane-wave code CASTEP. We find this structure to be more stable than an anatase zirconia epitaxial lattice on STO which has been previously found as the most stable structure if yttrium dopants were not incorporated within the zirconia layer. Analysis of charge density of this new structure reveals not localised vacancies, but several small pockets of low charge densities for each expected vacancy. We examine the mobility of oxide ions in the hetero-system using classical molecular dynamics simulation and attempt to relate the results to experimental conductivity values.

  12. Nanomechanical characterization of multilayered thin film structures for digital micromirror devices

    International Nuclear Information System (INIS)

    Wei Guohua; Bhushan, Bharat; Joshua Jacobs, S.

    2004-01-01

    The digital micromirror device (DMD), used for digital projection displays, comprises a surface-micromachined array of up to 2.07 million aluminum micromirrors (14 μm square and 15 μm pitch), which switch forward and backward thousands of times per second using electrostatic attraction. The nanomechanical properties of the thin-film structures used are important to the performance of the DMD. In this paper, the nanomechanical characterization of the single and multilayered thin film structures, which are of interest in DMDs, is carried out. The hardness, Young's modulus and scratch resistance of TiN/Si, SiO 2 /Si, Al alloy/Si, TiN/Al alloy/Si and SiO 2 /TiN/Al alloy/Si thin-film structures were measured using nanoindentation and nanoscratch techniques, respectively. The residual (internal) stresses developed during the thin film growth were estimated by measuring the radius of curvature of the sample before and after deposition. To better understand the nanomechanical properties of these thin film materials, the surface and interface analysis of the samples were conducted using X-ray photoelectron spectroscopy. The nanomechanical properties of these materials are analyzed and the impact of these properties on micromirror performance is discussed

  13. Interfacial effects in multilayers

    International Nuclear Information System (INIS)

    Barbee, T.W. Jr.

    1998-01-01

    Interfacial structure and the atomic interactions between atoms at interfaces in multilayers or nano-laminates have significant impact on the physical properties of these materials. A technique for the experimental evaluation of interfacial structure and interfacial structure effects is presented and compared to experiment. In this paper the impact of interfacial structure on the performance of x-ray, soft x-ray and extreme ultra-violet multilayer optic structures is emphasized. The paper is concluded with summary of these results and an assessment of their implications relative to multilayer development and the study of buried interfaces in solids in general

  14. Structure and morphology of pentacene thin films - from sub-monolayers to application relevant multilayers

    International Nuclear Information System (INIS)

    Resel, R.; Werzer, O.; Nabok, D.; Puschnig, P.; Ambrosch-Draxl, C.; Smilgies, D.; Haase, A.; Stadlober, B.

    2008-01-01

    Full text: The conjugated molecule pentacene is one of the most prominent material for application in organic thin film transistors. Charge carrier mobilities of about 1 cm 2 /Vs are realized in different device geometries which are used in integrated circuits. The device performance depends on the detailed structure and morphology of the pentacene thin films. This work presents an combined atomic force microscopy / x-ray scattering study on the formation of pentacene thin films starting from sub-monolayer coverage to the first closed monolayer to finally multilayer structures as they are used in device structures. Thin films of pentacene are prepared on oxidized silicon wafer with nominal thicknesses between 0.2 nm up to 180 nm. The films are investigated ex-situ by x-ray reflectivity and grazing incidence diffraction. In the sub-monolayer regime the formation of separated islands with up-right standing molecules are observed. The islands show typically dendritic shape with a separation of 2 μm from each other. With increasing coverage the dendritic islands coalescent until the first monolayer closes. Fitting of the x-ray reflectivity reveals that an additional layer between the substrate and the up-right standing pentacene molecules is present. During the formation of the second monolayer crystalline islands are formed. The crystallites grow in lateral and vertical size with increasing film thickness. The crystal structure of pentacene within the films is a surface induced phase. The crystal structure of this metastable phase could be solved by a combined experimental and theoretical approach. At a nominal film thickness of about 40 nm the equilibrium bulk structure of pentacene appears; both phases remain existent up the thickest films investigated in this study. (author)

  15. Influence of strain on band structure of semiconductor nanostructures

    Directory of Open Access Journals (Sweden)

    Raičević Nevena

    2009-01-01

    Full Text Available The influence of the mechanical strain on the electronic structure of the asymmetric (In,GaAs/GaAs quantum well is considered. Both the direct influence of strain on the orbital part of the electronic structure and an indirect influence through the strain dependent Rashba and Dresselhaus Hamiltonians are taken into account. The analyzed quantum well is taken to have a triangular shape, and is oriented along the direction. For this direction, there exists both the intrinsic and strain-induced spin-orbit interaction. For all analyzed types of spin-orbit interaction, subband splittings depend linearly on the in-plane wave vector. On the other hand, the electronic structure for the Rashba type of the strain-induced spin-orbit interaction shows isotropic dependence in the k-space, while the electronic structure due to the Dresselhaus type shows anisotropy. Furthermore, the Rashba strain-induced spin-orbit interaction increases subband splitting, while the effect of the Dresselhaus Hamiltonian on the electronic structure is opposite to the intrinsic spin-orbit interaction for certain polar angles.

  16. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  17. Engineering polyelectrolyte multilayer structure at the nanometer length scale by tuning polymer solution conformation.

    Science.gov (United States)

    Boddohi, Soheil; Killingsworth, Christopher; Kipper, Matt

    2008-03-01

    Chitosan (a weak polycation) and heparin (a strong polyanion) are used to make polyelectrolyte multilayers (PEM). PEM thickness and composition are determined as a function of solution pH (4.6 to 5.8) and ionic strength (0.1 to 0.5 M). Over this range, increasing pH increases the PEM thickness; however, the sensitivity to changes in pH is a strong function of ionic strength. The PEM thickness data are correlated to the polymer conformation in solution. Polyelectrolyte conformation in solution is characterized by gel permeation chromatography (GPC). The highest sensitivity of PEM structure to pH is obtained at intermediate ionic strength. Different interactions govern the conformation and adsorption phenomena at low and high ionic strength, leading to reduced sensitivity to solution pH at extreme ionic strengths. The correspondence between PEM thickness and polymer solution conformation offers opportunities to tune polymer thin film structure at the nanometer length scale by controlling simple, reproducible processing conditions.

  18. Enhancing sound absorption and transmission through flexible multi-layer micro-perforated structures.

    Science.gov (United States)

    Bravo, Teresa; Maury, Cédric; Pinhède, Cédric

    2013-11-01

    Theoretical and experimental results are presented into the sound absorption and transmission properties of multi-layer structures made up of thin micro-perforated panels (ML-MPPs). The objective is to improve both the absorption and insulation performances of ML-MPPs through impedance boundary optimization. A fully coupled modal formulation is introduced that predicts the effect of the structural resonances onto the normal incidence absorption coefficient and transmission loss of ML-MPPs. This model is assessed against standing wave tube measurements and simulations based on impedance translation method for two double-layer MPP configurations of relevance in building acoustics and aeronautics. Optimal impedance relationships are proposed that ensure simultaneous maximization of both the absorption and the transmission loss under normal incidence. Exhaustive optimization of the double-layer MPPs is performed to assess the absorption and/or transmission performances with respect to the impedance criterion. It is investigated how the panel volumetric resonances modify the excess dissipation that can be achieved from non-modal optimization of ML-MPPs.

  19. Evaluation of interlayer interfacial stiffness and layer wave velocity of multilayered structures by ultrasonic spectroscopy.

    Science.gov (United States)

    Ishii, Yosuke; Biwa, Shiro

    2014-07-01

    An ultrasonic evaluation procedure for the interlayer interfacial normal stiffness and the intralayer longitudinal wave velocity of multilayered plate-like structures is proposed. Based on the characteristics of the amplitude reflection spectrum of ultrasonic wave at normal incidence to a layered structure with spring-type interlayer interfaces, it is shown that the interfacial normal stiffness and the longitudinal wave velocity in the layers can be simultaneously evaluated from the frequencies of local maxima and minima of the spectrum provided that all interfaces and layers have the same properties. The effectiveness of the proposed procedure is investigated from the perspective of the sensitivity of local extremal frequencies of the reflection spectrum. The feasibility of the proposed procedure is also investigated when the stiffness of each interface is subjected to small random fluctuations about a certain average value. The proposed procedure is applied to a 16-layered cross-ply carbon-fiber-reinforced composite laminate. The normal stiffness of resin-rich interfaces and the longitudinal wave velocity of plies in the thickness direction evaluated from the experimental reflection spectrum are shown to be consistent with simple theoretical estimations.

  20. The multilayered structure of ultrathin amorphous carbon films synthesized by filtered cathodic vacuum arc deposition

    KAUST Repository

    Wang, Na

    2013-08-01

    The structure of ultrathin amorphous carbon (a-C) films synthesized by filtered cathodic vacuum arc (FCVA) deposition was investigated by high-resolution transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy. Results of the plasmon excitation energy shift and through-thickness elemental concentration show a multilayered a-C film structure comprising an interface layer consisting of C, Si, and, possibly, SiC, a buffer layer with continuously increasing sp 3 fraction, a relatively thicker layer (bulk film) of constant sp 3 content, and an ultrathin surface layer rich in sp 2 hybridization. A detailed study of the C K-edge spectrum indicates that the buffer layer between the interface layer and the bulk film is due to the partial backscattering of C+ ions interacting with the heavy atoms of the silicon substrate. The results of this study provide insight into the minimum thickness of a-C films deposited by FCVA under optimum substrate bias conditions. Copyright © 2013 Materials Research Society.

  1. Ab-initio theoretical predictions of structural properties of semiconductors

    International Nuclear Information System (INIS)

    Rodriguez, C.O.; Peltzer y Blanca, E.L.; Cappannini, O.M.

    1983-01-01

    Calculations of the total energies of Si, GaP and C together with related structural properties are presented. The results show good agreement with experimental values (differences of less than 6%). They also agree with other recent theoretical results. Calculations for Si and GaP have already been reported and are given here as a reference. (L.C.) [pt

  2. Ab-initio theoretical predictions of structure properties of semiconductors

    International Nuclear Information System (INIS)

    Rodriguez, C.O.; Peltzer y Blanca, E.L.; Cappannini, O.M.

    1983-01-01

    In this paper, calculations of the total energies and related structural properties of Si, GaP and C are presented showing good agreement with experimental values. The total energy is calculated within the local-density functional formalism using first principles non-local pseudopotentials. (A.C.A.S.) [pt

  3. On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data

    Science.gov (United States)

    Pankratov, E. L.

    2018-05-01

    We introduce a model of redistribution of point radiation defects, their interaction between themselves and redistribution of their simplest complexes (divacancies and diinterstitials) in a multilayer structure. The model gives a possibility to describe qualitatively nonmonotonicity of distributions of concentrations of radiation defects on interfaces between layers of the multilayer structure. The nonmonotonicity was recently found experimentally. To take into account the nonmonotonicity we modify recently used in literature model for analysis of distribution of concentration of radiation defects. To analyze the model we used an approach of solution of boundary problems, which could be used without crosslinking of solutions on interfaces between layers of the considered multilayer structures.

  4. Structural and magnetic properties of Ce/Fe and Ce/FeCoV multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Tixier, S; Boeni, P [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Mannix, D; Stirling, W G [Liverpool Univ. (United Kingdom); Lander, G H

    1997-09-01

    Ce/Fe and Ce/FeCoV multilayers have been grown by magnetron sputtering. The interfaces are well defined and the layers are crystalline down to an individual layer thickness of 20 A. Ce/FeCoV multilayers show sharper interfaces than Ce/Fe but some loss of crystallinity is observed. Hysteresis loops obtained by SQUID show different behaviour of the bulk magnetisation as a function of the layer thickness. Fe moments are found by Moessbauer spectroscopy to be perpendicular to the interfaces for multilayers with small periodicity. (author) 2 figs., 2 refs.

  5. Scalable Inkjet-Based Structural Color Printing by Molding Transparent Gratings on Multilayer Nanostructured Surfaces.

    Science.gov (United States)

    Jiang, Hao; Kaminska, Bozena

    2018-04-24

    To enable customized manufacturing of structural colors for commercial applications, up-scalable, low-cost, rapid, and versatile printing techniques are highly demanded. In this paper, we introduce a viable strategy for scaling up production of custom-input images by patterning individual structural colors on separate layers, which are then vertically stacked and recombined into full-color images. By applying this strategy on molded-ink-on-nanostructured-surface printing, we present an industry-applicable inkjet structural color printing technique termed multilayer molded-ink-on-nanostructured-surface (M-MIONS) printing, in which structural color pixels are molded on multiple layers of nanostructured surfaces. Transparent colorless titanium dioxide nanoparticles were inkjet-printed onto three separate transparent polymer substrates, and each substrate surface has one specific subwavelength grating pattern for molding the deposited nanoparticles into structural color pixels of red, green, or blue primary color. After index-matching lamination, the three layers were vertically stacked and bonded to display a color image. Each primary color can be printed into a range of different shades controlled through a half-tone process, and full colors were achieved by mixing primary colors from three layers. In our experiments, an image size as big as 10 cm by 10 cm was effortlessly achieved, and even larger images can potentially be printed on recombined grating surfaces. In one application example, the M-MIONS technique was used for printing customizable transparent color optical variable devices for protecting personalized security documents. In another example, a transparent diffractive color image printed with the M-MIONS technique was pasted onto a transparent panel for overlaying colorful information onto one's view of reality.

  6. The structure and mechanical properties of multilayer nanocrystalline TiN/ZrN coatings obtained by vacuum-arc deposition

    Directory of Open Access Journals (Sweden)

    A.V. Demchyshyn

    2007-12-01

    Full Text Available TiN/ZrN multilayered condensates on BK-8 carbide tips substrates (62 HRC were produced by the vacuumarc deposition technique, using Ti and Zr plasma flows in reactive nitrogen gas medium with working pressure of 6.6·10–1 Pa. The TiN/ZrN multilayered condensates consist of TiN and ZrN sublayers, which have a thickness of ~100 nm, controlled by the processing parameters of the used deposition technique. The obtained coatings have hardness of 45 GPa and Young’s modulus of 320 GPa. The obtained results show that mechanical properties of such multilayered composites are considerably improved in comparison to those for the single-component coatings, TiN and ZrN. The dependence of hardness and Young’s modulus of the composites on sublayer thickness within a range of 100 nm was determined. The investigated structure and improved mechanical properties of the TiN/ZrN multilayered condensates would be very good platform for finding their industrial application, such as hard coatings with different purposes.

  7. Electronic structure calculations on nitride semiconductors and their alloys

    International Nuclear Information System (INIS)

    Dugdale, D.

    2000-09-01

    Calculations of the electronic properties of AIN, GaN, InN and their alloys are presented. Initial calculations are performed using the first principles pseudopotential method to obtain accurate lattice constants. Further calculations then investigate bonding in the nitrides through population analysis and density of state calculations. The empirical pseudopotential method is also used in this work. Pseudopotentials for each of the nitrides are constructed using a functional form that allows strained material and alloys to be studied. The conventional k.p valence band parameters for both zincblende and wurtzite are obtained from the empirical band structure using two different methods. A Monte-Carlo fitting of the k.p band structure to the pseudopotential data (or an effective mass method for the zincblende structure) is used to produce one set. Another set is obtained directly from the momentum matrix elements and energy eigenvalues at the centre of the Brillouin zone. Both methods of calculating k.p parameters produce band structure in excellent agreement with the original empirical band calculations near the centre of the Brillouin zone. The advantage of the direct method is that it produces consistent sets of parameters, and can be used in studies involving a series of alloy compositions. Further empirical pseudopotential method calculations are then performed for alloys of the nitrides. In particular, the variation of the band gap with alloy composition is investigated, and good agreement with theory and experiment is found. The direct method is used to obtain k.p parameters for the alloys, and is contrasted with the fitting approach. The behaviour of the nitrides under strain is also studied. In particular. valence band offsets for nitride heterojunctions are calculated, and a strong forward- backward asymmetry in the band offset is found, in good agreement with other results in the literature. (author)

  8. A dosemeter with a metal-insulator-semiconductor structure

    International Nuclear Information System (INIS)

    Digoy, J.-L.

    1973-01-01

    Description is given of a semiconducting device for measuring irradiation doses, this device being a Mosfet structure, field effect and insulated-gate device of revolution, with a cylindrical effective surface and ring-shaped source and drain. This can be applied to the measurement of doses up to 10 4 rads, for radiations of a few keV, in the field of in-vivo biology, in a flowing fluid [fr

  9. Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

    International Nuclear Information System (INIS)

    Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

    2013-01-01

    Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

  10. Ordered Dissipative Structures in Exciton Systems in Semiconductor Quantum Wells

    Directory of Open Access Journals (Sweden)

    Andrey A. Chernyuk

    2006-02-01

    Full Text Available A phenomenological theory of exciton condensation in conditions of inhomogeneous excitation is proposed. The theory is applied to the study of the development of an exciton luminescence ring and the ring fragmentation at macroscopical distances from the central excitation spot in coupled quantum wells. The transition between the fragmented and the continuous ring is considered. With assumption of a defect in the structure, a possibility of a localized island of the condensed phase in a fixed position is shown. Exciton density distribution is also analyzed in the case of two spatially separated spots of the laser excitation.

  11. Structure of highly perfect semiconductor strained-layer superlattices

    International Nuclear Information System (INIS)

    Vandenberg, J.M.

    1989-01-01

    High-resolution x-ray diffraction (HRXRD) measurements of strained-layer superlattices (SLS's) have been carried out using a four-crystal monochromator. A wide asymmetric range of sharp higher-order x-ray satellite peaks is observed indicating well-defined periodic structures. Using a kinematical diffraction step model very good agreement between measured and simulated x-ray satellite patterns could be achieved. These results show that this x- ray method is a powerful tool to evaluate the crystal quality of SLS's

  12. Interplay of Phonon and Exciton-Mediated Superconductivity in Hybrid Semiconductor-Superconductor Structures

    Science.gov (United States)

    Skopelitis, Petros; Cherotchenko, Evgenia D.; Kavokin, Alexey V.; Posazhennikova, Anna

    2018-03-01

    We predict a strong enhancement of the critical temperature in a conventional Bardeen-Cooper-Schrieffer (BCS) superconductor in the presence of a bosonic condensate of exciton polaritons. The effect depends strongly on the ratio of the cutoff frequencies for phonon and exciton-polariton mediated BCS superconductivity, respectively. We also discuss a possible design of hybrid semiconductor-superconductor structures suitable for the experimental observation of such an effect.

  13. Preparation and Sound Absorption Properties of a Barium Titanate/Nitrile Butadiene Rubber–Polyurethane Foam Composite with Multilayered Structure

    Science.gov (United States)

    Jiang, Xueliang; Yang, Zhen; Wang, Zhijie; Zhang, Fuqing; You, Feng

    2018-01-01

    Barium titanate/nitrile butadiene rubber (BT/NBR) and polyurethane (PU) foam were combined to prepare a sound-absorbing material with an alternating multilayered structure. The effects of the cell size of PU foam and the alternating unit number on the sound absorption property of the material were investigated. The results show that the sound absorption efficiency at a low frequency increased when decreasing the cell size of PU foam layer. With the increasing of the alternating unit number, the material shows the sound absorption effect in a wider bandwidth of frequency. The BT/NBR-PU foam composites with alternating multilayered structure have an excellent sound absorption property at low frequency due to the organic combination of airflow resistivity, resonance absorption, and interface dissipation. PMID:29565321

  14. Preparation and Sound Absorption Properties of a Barium Titanate/Nitrile Butadiene Rubber–Polyurethane Foam Composite with Multilayered Structure

    Directory of Open Access Journals (Sweden)

    Xueliang Jiang

    2018-03-01

    Full Text Available Barium titanate/nitrile butadiene rubber (BT/NBR and polyurethane (PU foam were combined to prepare a sound-absorbing material with an alternating multilayered structure. The effects of the cell size of PU foam and the alternating unit number on the sound absorption property of the material were investigated. The results show that the sound absorption efficiency at a low frequency increased when decreasing the cell size of PU foam layer. With the increasing of the alternating unit number, the material shows the sound absorption effect in a wider bandwidth of frequency. The BT/NBR-PU foam composites with alternating multilayered structure have an excellent sound absorption property at low frequency due to the organic combination of airflow resistivity, resonance absorption, and interface dissipation.

  15. Preparation and Sound Absorption Properties of a Barium Titanate/Nitrile Butadiene Rubber-Polyurethane Foam Composite with Multilayered Structure.

    Science.gov (United States)

    Jiang, Xueliang; Yang, Zhen; Wang, Zhijie; Zhang, Fuqing; You, Feng; Yao, Chu

    2018-03-22

    Barium titanate/nitrile butadiene rubber (BT/NBR) and polyurethane (PU) foam were combined to prepare a sound-absorbing material with an alternating multilayered structure. The effects of the cell size of PU foam and the alternating unit number on the sound absorption property of the material were investigated. The results show that the sound absorption efficiency at a low frequency increased when decreasing the cell size of PU foam layer. With the increasing of the alternating unit number, the material shows the sound absorption effect in a wider bandwidth of frequency. The BT/NBR-PU foam composites with alternating multilayered structure have an excellent sound absorption property at low frequency due to the organic combination of airflow resistivity, resonance absorption, and interface dissipation.

  16. Extraction of optical parameters of thin films from spectral measurements for design and optical performance of multilayer structures

    International Nuclear Information System (INIS)

    Muellerova, J.; Jurecka, S.; Kucerova, A.

    2003-01-01

    Optical parameters of a-Si:H and indium tin oxide (ITO) thin films deposited on glass substrates are determined from spectral measurements of reflectance and/or transmittance. It is shown how important the exact knowledge of optical parameters as well as thicknesses of the layers for the design and the optical performance of multilayer structures is. The model of the p-i-n based a:Si-H solar cell with ITO as transparent conductive oxide layer is used for illustrating. The modeling of the solar cell integral reflectance in the spectral region of (650-830) nm is used as a criterion to reverse engineering of a multilayer structure with suppressed reflectance losses. The reflectance of a solar cell is modelled and the simulation of the varying optical parameters of individual layers including their thicknesses is discussed. Besides this,the advantage of using an antireflective layer under ITO is discussed (Authors)

  17. Scattering of ultrasonic waves from porous piezoelectric multilayered structures immersed in a fluid

    International Nuclear Information System (INIS)

    Vashishth, Anil K; Gupta, Vishakha

    2012-01-01

    The interest in porous piezoelectric materials is due to the demand for low-frequency hydrophone/actuator devices for use in underwater acoustic systems and other oceanographic applications. Porosity decreases the acoustic impedance, thus improving the transfer of acoustic energy to water or biological tissues. The impedance mismatching problem between the dense piezoelectric materials and the surrounding medium can be solved by inclusion of porosity in dense piezoceramics. The complete description of acoustic propagation in a multilayered system is of great interest in a variety of applications, such as non-destructive evaluation and acoustic design, and there is need for a flexible model that can describe the reflection and transmission of ultrasonic waves in these media. The present paper elaborates a theoretical model, based on the transfer matrix method, for describing reflection and transmission of plane elastic waves through a porous piezoelectric laminated plate, immersed in a fluid. The analytical expressions for the reflection coefficient, transmission coefficient and acoustic impedance are derived. The effects of frequency, angle of incidence, number of layers, layer thickness and porosity are observed numerically for different configurations. The results obtained are deduced for the piezoelectric laminated structure, piezoelectric layer and poro-elastic layer immersed in a fluid, which are in agreement with earlier established results and experimental studies. (paper)

  18. Structures and magnetic behaviours of TiO2–Mn–TiO2 multilayers

    International Nuclear Information System (INIS)

    Fa-Min, Liu; Peng, Ding; Jian-Qi, Li

    2010-01-01

    The TiO 2 -Mn-TiO 2 multilayers are successfully grown on glass and silicon substrates by alternately using radio frequency reactive magnetron sputtering and direct current magnetron sputtering. The structures and the magnetic behaviours of these films are characterised with x-ray diffraction, transmission electron microscope (TEM), vibrating sample magnetometer, and superconducting quantum interference device (SQUID). It is shown that the multi-film consists of a mixture of anatase and rutile TiO 2 with an embedded Mn nano-film. It is found that there are two turning points from ferromagnetic phase to antiferromagnetic phase. One is at 42 K attributed to interface coupling between ferromagnetic Mn 3 O 4 and antiferromagnetic Mn 2 O 3 , and the other is at 97 K owing to the interface coupling between ferromagnetic Mn and antiferromagnetic MnO. The samples are shown to have ferromagnetic behaviours at room temperature from hysteresis in the M-H loops, and their ferromagnetism is found to vary with the thickness of Mn nano-film. Moreover, the Mn nano-film has a critical thickness of about 18.5 nm, which makes the coercivity of the multi-film reach a maximum of about 3.965×10 −2 T. (cross-disciplinary physics and related areas of science and technology)

  19. Estimation of photonic band gap in the hollow core cylindrical multilayer structure

    Science.gov (United States)

    Chourasia, Ritesh Kumar; Singh, Vivek

    2018-04-01

    The propagation characteristic of two hollow core cylindrical multilayer structures having high and low refractive index contrast of cladding regions have been studied and compared at two design wavelengths i.e. 1550 nm and 632.8 nm. With the help of transfer matrix method a relation between the incoming light wave and outgoing light wave has been developed using the boundary matching technique. In high refractive index contrast, small numbers of layers are sufficient to provide perfect band gap in both design wavelengths. The spectral position and width of band gap is highly depending on the optical path of incident light in all considered cases. For sensing application, the sensitivity of waveguide can be obtained either by monitoring the width of photonic band gap or by monitoring the spectral shift of photonic band gap. Change in the width of photonic band gap with the core refractive index is larger in high refractive index contrast of cladding materials. However, in the case of monitoring the spectral shift of band gap, the obtained sensitivity is large for low refractive index contrast of cladding materials and further it increases with increase of design wavelength.

  20. The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

    International Nuclear Information System (INIS)

    Subramaniam, S.C.; Rezazadeh, A.A.

    2006-01-01

    The effects of Fe-ion bombardment at 77 K (cold) and room temperature (RT) into single layer InGaAs, InP and multilayer InP/InGaAs HBT structures have been investigated. Annealing characteristics and RF dissipation loss measurements of Fe-ion bombarded samples at 77 K indicated good electrical isolation in n-, p-type InGaAs materials and InP/InGaAs HBT structures. Thermally stable (up to 250 deg. C) high sheet resistance (R sh ) of ∼5 x 10 6 Ω/sq has been achieved on these samples while higher R sh of ∼10 7 Ω/sq was obtained for the n-InP materials bombarded with similar conditions. Dissipation losses of 1.7 dB/cm at 10 GHz and 2.8 dB/cm at 40 GHz have been measured for the cold Fe-ion bombarded InP-based HBT structures. This result is similar to those obtained for an un-bombarded S.I. InP substrate, indicating good electrical isolation. We have also determined electron trapping levels by thermal annealing for the cold and RT Fe-ion bombarded samples. It is shown that the high resistivity achieved in the cold implanted InGaAs layer is most likely due to the creation of mid-bandgap defect levels (E C - 0.33) eV, which are created only in the cold Fe-ion bombardment. The DC isolation and RF dissipation loss analysis have been used to identify a suitable bombardment scheme for the fabrication of planar InP/InGaAs HBTs

  1. Preparation, structures and magnetic properties of Dy/Zr and Ho/Zr two-layers and multi-layers

    International Nuclear Information System (INIS)

    Luche, M.C.

    1993-01-01

    The first part of the report is devoted to the description of the ultra-vacuum evaporation equipment, to the sample preparation conditions and to the characterization of the two-layers and multi-layers through reflection and glancing incidence X diffraction and transmission electron microscopy. In the second part, the magnetic properties of the samples are studied and relations between properties and structures are examined. 37 fig., 35 ref

  2. Theory for passive mode-locking in semiconductor laser structures including the effects of self-phase modulation, dispersion and pulse collisions

    NARCIS (Netherlands)

    Koumans, R.G.M.P.; Roijen, van R.

    1996-01-01

    We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other

  3. Scanning near-field infrared microscopy on semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Jacob, Rainer

    2011-01-15

    literature. While the structures of the first system were in the micrometer regime, the capability to probe buried nanostructures is demonstrated at a sample of indium arsenide quantum dots. Those dots are covered by a thick layer of gallium arsenide. For the first time ever, it is shown experimentally that transitions between electron states in single quantum dots can be investigated by near-field microscopy. By monitoring the near-field response of these quantum dots while scanning the wavelength of the incident light beam, it was possible to obtain characteristic near-field signatures of single dots. Near-field contrasts up to 30 % could be measured for resonant excitation of electrons in the conduction band of the indium arsenide dots. (orig.)

  4. Scanning near-field infrared microscopy on semiconductor structures

    International Nuclear Information System (INIS)

    Jacob, Rainer

    2011-01-01

    literature. While the structures of the first system were in the micrometer regime, the capability to probe buried nanostructures is demonstrated at a sample of indium arsenide quantum dots. Those dots are covered by a thick layer of gallium arsenide. For the first time ever, it is shown experimentally that transitions between electron states in single quantum dots can be investigated by near-field microscopy. By monitoring the near-field response of these quantum dots while scanning the wavelength of the incident light beam, it was possible to obtain characteristic near-field signatures of single dots. Near-field contrasts up to 30 % could be measured for resonant excitation of electrons in the conduction band of the indium arsenide dots. (orig.)

  5. Structural properties of III-V zinc-blende semiconductors under pressure

    International Nuclear Information System (INIS)

    Froyen, S.; Cohen, M.L.

    1983-01-01

    The pseudopotential method within the local-density approximation is used to investigate the static and structural properties of some III-V compound semiconductors. Comparisons of calculated total energies as a function of volume and structure yield information about solid-solid phase transformations. At high pressures the results indicate that several metallic structures are lower in energy than the zinc-blende structure. From our results the compounds (AlP, AlAs, GaP, and GaAs) can be divided into two classes. In the Ga compounds, we find a pressure-induced phase transformation to either rocksalt, β-Sn, or NiAs, whereas in the Al compounds rocksalt and NiAs are stabilized with respect to β-Sn. All structures except zinc blende are metallic. We discuss the electronic structure of each phase and show how it relates to structural stability

  6. Ion irradiation effects in structural and magnetic properties of Co/Cu multilayers

    International Nuclear Information System (INIS)

    Sakamoto, Isao; Okazaki, Satoshi; Koike, Masaki; Honda, Shigeo

    2012-01-01

    400 keV Ar ion (the Ar ion) and 50 keV He ion (the He ion) irradiations were performed in order to elucidate roles of Co/Cu interfacial structures in physical origins of giant magnetoresistance (GMR) in the [Co (2 nm)/Cu (2 nm)] 30 multilayers (MLs). The magnetoresistance (MR) ratio after the Ar ion irradiation decreases abruptly with increasing Ar ion fluence. On the other hand, the MR ratio after the He ion irradiation decreases slowly with increasing He ion fluence. The Ar ion irradiation induces the decrease in the difference (R max − R sat ) between the maximum resistance (R max ) and the saturated resistance (R sat ) under in-plane magnetic field and the increase in the R sat , although the effect of the He ion irradiation is not remarkable. The decrease in the (R max − R sat ) rather than the increase in the R sat seems to be effective for the decrease in the MR ratios after the Ar ion and the He ion irradiation. The increase in the R sat implies the mixing of Co atoms in Cu layers. The antiferromagnetic coupling fraction (AFF) estimated from the magnetization curves after the Ar ion and the He ion irradiation shows the similar behavior with the MR ratio as a function of ion fluence. Therefore, although the degrees of the irradiation effects by the Ar ion and the He ions are different, we suggest the relation between the GMR and the AFF affected by the ion-induced interfacial structures accompanied with the atomic mixing in the interfacial region.

  7. Structural investigation of semi-conductor nanostructures by x-ray diffraction

    International Nuclear Information System (INIS)

    Stangl, J.

    2003-01-01

    Full text: Semiconductor nanostructures present a topic of increasing interest due to their potential for new device concepts, as well as from a scientific point of view. In structures with dimensions smaller than the DeBroglie wavelength of electrons or holes, quantum confinement effects determine the electronic and optical properties. For the understanding of such structures, their structural investigation, i.e., the determination of size, shape, chemical composition and strain state is mandatory. X-ray diffraction is a powerful technique for this purpose. In particular, the strain fields within nanostructures as well as in the surrounding matrix can be determined with high precision. Using synchrotron radiation sources, also the distribution of chemical composition within objects with typically several nm height and 10 to 100 nm width can be established. With x-ray diffraction, the non-destructive investigation of uncapped and buried structures is possible. The latter is important, as for applications buried structures are needed, and during capping the structural properties may change considerably. Here, we will focus on so-called self-assembled nanostructures, which form during the deposition of different semiconductors on top of each other. In contrast to structures etched after growth of planar layers, self organized islands or wires are virtually defect-free and hence promising for applications. Different scattering techniques sensitive to shape and/or composition and strain will be discussed. (author)

  8. The structural and optical constants of Ag2S semiconductor nanostructure in the Far-Infrared.

    Science.gov (United States)

    Zamiri, Reza; Abbastabar Ahangar, Hossein; Zakaria, Azmi; Zamiri, Golnoosh; Shabani, Mehdi; Singh, Budhendra; Ferreira, J M F

    2015-01-01

    In this paper a template-free precipitation method was used as an easy and low cost way to synthesize Ag2S semiconductor nanoparticles. The Kramers-Kronig method (K-K) and classical dispersion theory was applied to calculate the optical constants of the prepared samples, such as the reflective index n(ω) and dielectric constant ε(ω) in Far-infrared regime. Nanocrystalline Ag2S was synthesized by a wet chemical precipitation method. Ag2S nanoparticle was characterized by X-ray diffraction, Scanning Electron Microscopy, UV-visible, and FT-IR spectrometry. The refinement of the monoclinic β-Ag2S phase yielded a structure solution similar to the structure reported by Sadanaga and Sueno. The band gap of Ag2S nanoparticles is around 0.96 eV, which is in good agreement with previous reports for the band gap energy of Ag2S nanoparticles (0.9-1.1 eV). The crystallite size of the synthesized particles was obtained by Hall-Williamson plot for the synthesized Ag2S nanoparticles and it was found to be 217 nm. The Far-infrared optical constants of the prepared Ag2S semiconductor nanoparticles were evaluated by means of FTIR transmittance spectra data and K-K method. Graphical abstractThe Far-infrared optical constants of Ag2S semiconductor nanoparticles.

  9. Structural, morphological and magnetic analysis of Cd–Co–S dilute magnetic semiconductor nanofilms

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Suresh [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh 173234 (India); Negi, N.S. [Department of Physics, Himachal Pradesh University, Summer Hill, Shimla, Himachal Pradesh 171005 (India); Katyal, S.C. [Department of Physics, Jaypee Institute of Information Technology, Sec-128, Noida, Uttar Pradesh 201301 (India); Sharma, Pankaj, E-mail: pankaj.sharma@juit.ac.in [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh 173234 (India); Sharma, Vineet [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh 173234 (India)

    2014-10-01

    Cd{sub 1−x}Co{sub x}S dilute magnetic semiconductor nanofilms (0≤x≤0.08 at%) deposited by chemical bath deposition have been investigated using grazing angle x-ray diffraction, atomic force microscopy and vibrating sample magnetometer. The introduction of Co{sup 2+} ions in CdS structure induces structural disorders and hence, results in degradation of crystallinity. The crystallite size, interplanar spacing and lattice parameter ratio decrease with increasing Co{sup 2+} concentration in CdS. The diamagnetic state of CdS disappears with increase in Co concentration and films with x>0.02 exhibit ferromagnetism. This may be explained in terms of the spin–orbit interactions and Co{sup 2+} ion induced the lattice defects and phase separation. - Highlights: • Cd{sub 1−x}Co{sub x}S dilute magnetic semiconductor nanofilms (0≤x≤0.08 at%) deposited by CBD. • The diamagnetic state of CdS vanishes for x=0.02. • For x>0.02, dilute magnetic semiconductor nanofilms shows a ferromagnetic state.

  10. Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors.

    Science.gov (United States)

    Jie, Wenjing; Hao, Jianhua

    2014-06-21

    Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

  11. Synthesis and optical properties of novel organic-inorganic hybrid nanolayer structure semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Sanjun; Lanty, Gaetan; Lauret, Jean-Sebastien [Laboratoire de Photonique Quantique et Moleculaire de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France); Deleporte, Emmanuelle, E-mail: Emmanuelle.Deleporte@lpqm.ens-cachan.fr [Laboratoire de Photonique Quantique et Moleculaire de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France); Audebert, Pierre; Galmiche, Laurent [Laboratoire de Photophysique et Photochimie Supramoleculaires et Macromoleculaires de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France)

    2009-06-15

    We report on the synthesis of some novel organic-inorganic hybrid 2D perovskite semiconductors (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. These semiconductors are self-assembled intercalation nanolayers and have a multi-quantum-well energy level structure. We systematically vary the characteristic of organic groups (R-(CH{sub 2}){sub n}NH{sub 3}{sup +}) to study the relationship between their structures and the optical properties of (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. From optical absorption and photoluminescence spectroscopy experiments performed on series of samples, we find some trends of choosing the organic groups to improve the optical performance of (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. A new organic group, which allows synthesis of nanolayer perovskite semiconductors with quite high photoluminescence efficiency and better long-term stability, has been found.

  12. Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

    International Nuclear Information System (INIS)

    Tuz, Vladimir R.

    2016-01-01

    In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

  13. Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

    Energy Technology Data Exchange (ETDEWEB)

    Tuz, Vladimir R., E-mail: tvr@rian.kharkov.ua

    2016-12-01

    In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

  14. Magnetic and structural characterization of the semiconductor FeIn2Se4

    International Nuclear Information System (INIS)

    Torres, T.; Sagredo, V.; Chalbaud, L.M. de; Attolini, G.; Bolzoni, F.

    2006-01-01

    Plate-like single crystals of magnetic semiconductor FeIn 2 Se 4 were grown with a chemical vapour transport technique. The X-ray powder diffraction analyses suggest that the compound crystallize in the hexagonal structure with space group P3m1. We have performed dc magnetization measurements at different magnetic fields on the diluted magnetic semiconductor FeIn 2 Se 4 . Low field magnetizations measurements shows irreversibility in the DC magnetization, as evidenced by field cooled and zero field cooled measurements below 17 K, suggesting a spin-glass like behaviour. The high-temperature susceptibility data follow a typical Curie-Weiss law with θ=-183±2 K which suggest the presence of predominant antiferromagnetic interactions with high degree of frustration. The randomness and frustration necessary for spin-glass behaviour are explained in a manner compatible with the cation and charge ordering present in the material

  15. Study of interfaces in organic semiconductor heterojunctions

    International Nuclear Information System (INIS)

    Maheshwari, P; Dutta, D; Sudarshan, K; Sharma, S K; Pujari, P K; Samanta, S; Singh, A; Aswal, D K

    2011-01-01

    The defect structure at the organic heterojunctions is studied using slow positron beam. The structural and electronic properties of heterojunctions are of technological and fundamental importance for understanding and optimization of electronic processes in organic devices. Interface trap centres play a significant role in the electrical conduction through the junctions. Depth dependent Doppler broadened annihilation measurements have been carried out in p- and n-type organic semiconductor thin films (30-80 nm) both single as well as multilayers grown on quartz substrate. The objective of the present study is to investigate the defect structure and to understand the behavior of positrons at the charged organic interfaces. Our result shows the sensitivity of positrons to the interfacial disorders that may be a convoluted effect of the presence of defects as well as the influence of the charge dipole in multilayers.

  16. Interlayer growth in Mo/B4C multilayered structures upon thermal annealing

    International Nuclear Information System (INIS)

    Nyabero, S. L.; Kruijs, R. W. E. van de; Yakshin, A. E.; Zoethout, E.; Bosgra, J.; Loch, R. A.; Blanckenhagen, G. von; Bijkerk, F.

    2013-01-01

    Both multilayer period thickness expansion and compaction were observed in Mo/B 4 C multilayers upon annealing, and the physical causes for this were explored in detail. Using in situ time-dependent grazing incidence X-ray reflectometry, period changes down to picometer-scale were resolved. It was shown that the changes depend on the thickness of the B 4 C layers, annealing temperature, and annealing time. Although strong stress relaxation during annealing was observed, it was excluded as a cause for period expansion. Auger electron spectroscopy and wide angle X-ray diffraction measurements revealed the growth of interlayers, with associated period changes influenced by the supply of B and C atoms to the growing compound interlayers. For multilayers with a Mo thickness of 3 nm, two regimes were recognized, depending on the deposited B 4 C thickness: in multilayers with B 4 C ≤ 1.5 nm, the supply of additional Mo into the already formed MoB x C y interlayer was dominant and led to densification, resulting in period compaction. For multilayers with B 4 C ≥ 2 nm, the B and C enrichment of interlayers formed low density compounds and yielded period expansion.

  17. Structure, phase analysis and component composition of multilayer films depositing in T-10 tokamak

    International Nuclear Information System (INIS)

    Guseva, M.I.; Gureev, V.M.; Khimchenko, L.N.; Kolbasov, B.N.; Vukolov, K.Yu.

    2005-01-01

    The structure and composition of the deuterocarbon films, formed on the internal surfaces of the T-10 tokamak vacuum chamber and on the stainless steel mirror-specimens positioned inside the T-10 tokamak upper stub pipe during the experimental campaigns in spring-summer of 2002 and autumn of 2003, are compared. Before the 2003 experimental campaign the ring diaphragm made of MPG-8 graphite was removed from the tokamak and MPG-8 graphite in the movable limiter was replaced by RGT-91 graphite. All the films have a multilayer structure. In the 2002 campaign all the films had homogeneous layer structure and smooth surface without any signs of physical sputtering. The films formed on the chamber walls in both campaigns were 'soft' and had reddish-brown colour. The average atomic D/C ratio in these films during 2002 campaign was of 0.66. The 'soft' film formation was caused by the plasma-wall interaction during the vacuum chamber conditioning under deuterium discharges. Preliminary X-ray diffraction analysis suggests that these films have amorphous structure and contain from 4 to 10 % fullerene-like substance with lattice constant in the range of 1.2-1.4 nm. Mirror surfaces could be screened during chamber conditioning and exposed to plasma only during working discharges. The films on mirrors were thinner than those on the vacuum chamber walls and, as a rule, semitransparent. The films deposited on the mirror surface, exposed to plasma only during working discharges, in 2002 were 'hard' with D/C = 0.26. Two crystalline phases with interplanar spacings of 0.359 and 0.304 nm at the Bragg angles 2θ of 24.8 and 28.8 deg respectively were revealed in a diffractogram of these films. In the 2003 campaign both types of films (formed on vacuum chamber walls and deposited on mirror specimens) were 'soft' with D/C ratio of 0.57 and 1.55 respectively. Deuterium concentration in the films is determined by the temperature of film formation - <370 K on mirror specimens and ∼520 K

  18. Multilayer As{sub 2}Se{sub 3}/GeS{sub 2} quarter wave structures for photonic applications

    Energy Technology Data Exchange (ETDEWEB)

    Todorov, R; Tasseva, J; Babeva, Tz; Petkov, K, E-mail: rossen@clf.bas.b [Institute of Optical Materials and Technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl.109, 1113 Sofia (Bulgaria)

    2010-12-22

    The optical properties of single layers from As{sub 2}Se{sub 3} and GeS{sub 2}, double-layered stack and quarter-wave multilayer structure consisting of alternating layers from both materials are investigated. For modelling of multilayer coating the thickness dependence of the refractive index of single coatings from both materials is studied. The particularities and scope of application of different spectrophotometric methods for calculation of optical parameters of thin chalcogenide layers are discussed for film thickness, d, in the range {lambda}/25-1.5{lambda} ({lambda} being the operating wavelength). Having acquired the knowledge of optical parameters (refractive index, n, and extinction coefficient, k) of the single layers, we designed and produced a one-dimensional photonic crystal with fundamental reflection band at {lambda} = 850 nm. It was shown that the photoinduced changes of the refractive index of thin chalcogenide films can be used for enhancement of the optical contrast of both materials.

  19. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    CERN Document Server

    Saveliev, V

    2000-01-01

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  20. Structures of glide-set 90 deg. partial dislocation cores in diamond cubic semiconductors

    International Nuclear Information System (INIS)

    Beckman, S.P.; Chrzan, D.C.

    2003-01-01

    Two core reconstructions of the 90 deg. partial dislocations in diamond cubic semiconductors, the so-called single- and double-period structures, are often found to be nearly degenerate in energy. This near degeneracy suggests the possibility that both core reconstructions may be present simultaneously along the same dislocation core, with the domain sizes of the competing reconstructions dependent on temperature and the local stress state. To explore this dependence, a simple statistical mechanics-based model of the dislocation core reconstructions is developed and analyzed. Predictions for the temperature-dependent structure of the dislocation core are presented

  1. Surface structure, optoelectronic properties and charge transport in ZnO nanocrystal/MDMO-PPV multilayer films.

    Science.gov (United States)

    Lian, Qing; Chen, Mu; Mokhtar, Muhamad Z; Wu, Shanglin; Zhu, Mingning; Whittaker, Eric; O'Brien, Paul; Saunders, Brian R

    2018-05-07

    Blends of semiconducting nanocrystals and conjugated polymers continue to attract major research interest because of their potential applications in optoelectronic devices, such as solar cells, photodetectors and light-emitting diodes. In this study we investigate the surface structure, morphological and optoelectronic properties of multilayer films constructed from ZnO nanocrystals (NCs) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV). The effects of layer number and ZnO concentration (C ZnO ) used on the multilayer film properties are investigated. An optimised solvent blend enabled well-controlled layers to be sequentially spin coated and the construction of multilayer films containing six ZnO NC (Z) and MDMO-PPV (M) layers (denoted as (ZM) 6 ). Contact angle data showed a strong dependence on C ZnO and indicated distinct differences in the coverage of MDMO-PPV by the ZnO NCs. UV-visible spectroscopy showed that the MDMO-PPV absorption increased linearly with the number of layers in the films and demonstrates highly tuneable light absorption. Photoluminescence spectra showed reversible quenching as well as a surprising red-shift of the MDMO-PPV emission peak. Solar cells were constructed to probe vertical photo-generated charge transport. The measurements showed that (ZM) 6 devices prepared using C ZnO = 14.0 mg mL -1 had a remarkably high open circuit voltage of ∼800 mV. The device power conversion efficiency was similar to that of a control bilayer device prepared using a much thicker MDMO-PPV layer. The results of this study provide insight into the structure-optoelectronic property relationships of new semiconducting multilayer films which should also apply to other semiconducting NC/polymer combinations.

  2. Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

    International Nuclear Information System (INIS)

    Frigeri, C.; Nasi, L.; Serenyi, M.; Khanh, N.Q.; Csik, A.; Szekrenyes, Zs.; Kamaras, K.

    2012-01-01

    Complete text of publication follows. Among the present available renewable energy sources, energy harvesting from sunlight by means of photovoltaic cells is the most attractive one. In order to win over the traditional energy resources both efficiency and cost effectiveness of photovoltaic conversion must be optimized as far as possible. Efficiency is basically improved by the use of multijunction cells containing semiconductors with different band-gap. In this respect, the III-V compounds guarantee the highest efficiency, up to 41.6 %, but they are quite expensive. The latter drawback also affects other compounds like CdTe and CuIn 1-x Ga x Se 2 (CIGS). Si based solar devices have lower efficiency but are much more cost effective. They can use either crystalline or amorphous Si thin layers or Si nanoparticles. As to the thin films, amorphous Si (a-Si) is preferred to crystalline Si as it has a wider band-gap (1.7 instead of 1.1 eV) thus harvesting a larger portion of solar energy. A tandem cell is formed by using a-SiGe which has a smaller band-gap tunable between 1.1 and 1.7 eV depending on the Ge content. The best value should be 1.4 eV since the material properties seem to degrade below this value whilst the photo-conductivity drops after light soaking if the band gap exceeds 1.4 eV. A key issue of amorphous Si, Ge and SiGe is the high density of defects in the band-gap mostly due to dangling bonds whose density is particularly high (even up to 5 x10 19 cm -3 ) since the lattice is significantly disordered with distorted bond angles and lengths. This increases the probability of rupture of the Si-Si (Ge-Ge) bonds, i.e., formation of dangling bonds. Owing to the fact that hydrogen with its single electron structure can close the dangling bonds, their density can be reduced even by 4 orders of magnitude by doping with hydrogen. However, H is unstable in the host lattice. In fact, several findings showed its evolution from the thin layer upon annealing and that

  3. Microfluidic emulsion separation-simultaneous separation and sensing by multilayer nanofilm structures

    Energy Technology Data Exchange (ETDEWEB)

    Uhlmann, P; Truman, P; Stamm, M [Leibniz-Institut fuer Polymerforschung Dresden e V, Hohe Strasse 6, 01069 Dresden (Germany); Varnik, F; Zikos, G [Ruhr Universitaet Bochum, Stiepeler Strasse 129, 44801 Bochum (Germany); Moulin, J-F; Mueller-Buschbaum, P, E-mail: uhlmannp@ipfdd.de [Technische Universitaet Muenchen, Physik-Department, LS E13, James-Franck-Strasse 1, 85748 Garching (Germany)

    2011-05-11

    Emulsion separation is of high relevance for filtration applications, liquid-liquid-partitioning of biomolecules like proteins and recovery of products from droplet microreactors. Selective interaction of various components of an emulsion with substrates is used to design microfluidic flow chambers for efficient separation of emulsions into their individual components. Our lab-on-a-chip device consists of an emulsion separation cell with an integrated silicon sensor chip, the latter allowing the detection of liquid motion via the field-effect signal. Thus, within our lab-on-a-chip device, emulsions can be separated while the separation process is monitored simultaneously. For emulsion separation a surface energy step gradient, namely a sharp interface between the hydrophobic and hydrophilic parts of the separation chamber, is used. The key component of the lab-on-a-chip system is a multilayer and multifunctional nanofilm structure which not only provides the surface energy step gradient for emulsion separation but also constitutes the functional parts of the field-effect transistors. The proof-of-principle was performed using a model emulsion consisting of immiscible aqueous and organic solvent components. Droplet coalescence was identified as a key aspect influencing the separation process, with quite different effects during separation on open surfaces as compared to slit geometry. For a detailed description of this observation, an analytical model was derived and lattice Boltzmann computer simulations were performed. By use of grazing incidence small angle x-ray scattering (GISAXS) interfacial nanostructures during gold nanoparticle deposition in a flow field were probed to demonstrate the potential of GISAXS for in situ investigations during flow.

  4. On the Effect of Confinement on the Structure and Properties of Small-Molecular Organic Semiconductors

    KAUST Repository

    Martin, Jaime; Dyson, Matthew; Reid, Obadiah G.; Li, Ruipeng; Nogales, Aurora; Smilgies, Detlef-M.; Silva, Carlos; Rumbles, Garry; Amassian, Aram; Stingelin, Natalie

    2017-01-01

    Many typical organic optoelectronic devices, such as light-emitting diodes, field-effect transistors, and photovoltaic cells, use an ultrathin active layer where the organic semiconductor is confined within nanoscale dimensions. However, the question of how this spatial constraint impacts the active material is rarely addressed, although it may have a drastic influence on the phase behavior and microstructure of the active layer and hence the final performance. Here, the small-molecule semiconductor p-DTS(FBTTh) is used as a model system to illustrate how sensitive this class of material can be to spatial confinement on device-relevant length scales. It is also shown that this effect can be exploited; it is demonstrated, for instance, that spatial confinement is an efficient tool to direct the crystal orientation and overall texture of p-DTS(FBTTh) structures in a controlled manner, allowing for the manipulation of properties including photoluminescence and charge transport characteristics. This insight should be widely applicable as the temperature/confinement phase diagrams established via differential scanning calorimetry and grazing-incidence X-ray diffraction are used to identify specific processing routes that can be directly extrapolated to other functional organic materials, such as polymeric semiconductors, ferroelectrics or high-refractive-index polymers, to induce desired crystal textures or specific (potentially new) polymorphs.

  5. GeAs and SiAs monolayers: Novel 2D semiconductors with suitable band structures

    Science.gov (United States)

    Zhou, Liqin; Guo, Yu; Zhao, Jijun

    2018-01-01

    Two dimensional (2D) materials provide a versatile platform for nanoelectronics, optoelectronics and clean energy conversion. Based on first-principles calculations, we propose a novel kind of 2D materials - GeAs and SiAs monolayers and investigate their atomic structure, thermodynamic stability, and electronic properties. The calculations show that monolayer GeAs and SiAs sheets are energetically and dynamically stable. Their small interlayer cohesion energies (0.191 eV/atom for GeAs and 0.178 eV/atom for SiAs) suggest easy exfoliation from the bulk solids that exist in nature. As 2D semiconductors, GeAs and SiAs monolayers possess band gap of 2.06 eV and 2.50 eV from HSE06 calculations, respectively, while their band gap can be further engineered by the number of layers. The relatively small and anisotropic carrier effective masses imply fast electric transport in these 2D semiconductors. In particular, monolayer SiAs is a direct gap semiconductor and a potential photocatalyst for water splitting. These theoretical results shine light on utilization of monolayer or few-layer GeAs and SiAs materials for the next-generation 2D electronics and optoelectronics with high performance and satisfactory stability.

  6. The control of stoichiometry in Epitaxial semiconductor structures. Interfacial Chemistry: Property relations. A workshop review

    Science.gov (United States)

    Bachmann, Klaus J.

    1995-01-01

    A workshop on the control of stoichiometry in epitaxial semiconductor structures was held on August 21-26, 1995 in the hotel Stutenhaus at Vesser in Germany. The secluded location of the workshop in the forest of Thuringia and its informal style stimulated extensive private discussions among the participants and promoted new contacts between young scientists from Eastern and Western Europe and the USA. Topics addressed by the presentations were interactions of precursors to heteroepitaxy and doping with the substrate surface, the control of interfacial properties under the conditions of heteroepitaxy for selected materials systems, methods of characterization of interfaces and native point defects in semiconductor heterostructures and an in depth evaluation of the present status of the control and characterization of the point defect chemistry for one specific semiconductor (ZnGeP2), including studies of both heterostructures and bulk single crystals. The selected examples of presentations and comments given here represent individual choices - made by the author to highlight major points of the discussions.

  7. Raman spectroscopy as an advanced structural nanoprobe for conjugated molecular semiconductors

    International Nuclear Information System (INIS)

    Wood, Sebastian; Hollis, Joseph Razzell; Kim, Ji-Seon

    2017-01-01

    Raman spectroscopy has emerged as a powerful and important characterisation tool for probing molecular semiconducting materials. The useful optoelectronic properties of these materials arise from the delocalised π -electron density in the conjugated core of the molecule, which also results in large Raman scattering cross-sections and a strong coupling between its electronic states and vibrational modes. For this reason, Raman spectroscopy offers a unique insight into the properties of molecular semiconductors, including: chemical structure, molecular conformation, molecular orientation, and fundamental photo- and electro-chemical processes—all of which are critically important to the performance of a wide range of optical and electronic organic semiconductor devices. Experimentally, Raman spectroscopy is non-intrusive, non-destructive, and requires no special sample preparation, and so is suitable for a wide range of in situ measurements, which are particularly relevant to issues of thermal and photochemical stability. Here we review the development of the family of Raman spectroscopic techniques, which have been applied to the study of conjugated molecular semiconductors. We consider the suitability of each technique for particular circumstances, and the unique insights it can offer, with a particular focus on the significance of these measurements for the continuing development of stable, high performance organic electronic devices. (topical review)

  8. On the Effect of Confinement on the Structure and Properties of Small-Molecular Organic Semiconductors

    KAUST Repository

    Martín, Jaime

    2017-12-11

    Many typical organic optoelectronic devices, such as light-emitting diodes, field-effect transistors, and photovoltaic cells, use an ultrathin active layer where the organic semiconductor is confined within nanoscale dimensions. However, the question of how this spatial constraint impacts the active material is rarely addressed, although it may have a drastic influence on the phase behavior and microstructure of the active layer and hence the final performance. Here, the small-molecule semiconductor p-DTS(FBTTh) is used as a model system to illustrate how sensitive this class of material can be to spatial confinement on device-relevant length scales. It is also shown that this effect can be exploited; it is demonstrated, for instance, that spatial confinement is an efficient tool to direct the crystal orientation and overall texture of p-DTS(FBTTh) structures in a controlled manner, allowing for the manipulation of properties including photoluminescence and charge transport characteristics. This insight should be widely applicable as the temperature/confinement phase diagrams established via differential scanning calorimetry and grazing-incidence X-ray diffraction are used to identify specific processing routes that can be directly extrapolated to other functional organic materials, such as polymeric semiconductors, ferroelectrics or high-refractive-index polymers, to induce desired crystal textures or specific (potentially new) polymorphs.

  9. Plated lamination structures for integrated magnetic devices

    Science.gov (United States)

    Webb, Bucknell C.

    2014-06-17

    Semiconductor integrated magnetic devices such as inductors, transformers, etc., having laminated magnetic-insulator stack structures are provided, wherein the laminated magnetic-insulator stack structures are formed using electroplating techniques. For example, an integrated laminated magnetic device includes a multilayer stack structure having alternating magnetic and insulating layers formed on a substrate, wherein each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by an insulating layer, and a local shorting structure to electrically connect each magnetic layer in the multilayer stack structure to an underlying magnetic layer in the multilayer stack structure to facilitate electroplating of the magnetic layers using an underlying conductive layer (magnetic or seed layer) in the stack as an electrical cathode/anode for each electroplated magnetic layer in the stack structure.

  10. Advanced understanding on electronic structure of molecular semiconductors and their interfaces

    Science.gov (United States)

    Akaike, Kouki

    2018-03-01

    Understanding the electronic structure of organic semiconductors and their interfaces is critical to optimizing functionalities for electronics applications, by rational chemical design and appropriate combination of device constituents. The unique electronic structure of a molecular solid is characterized as (i) anisotropic electrostatic fields that originate from molecular quadrupoles, (ii) interfacial energy-level lineup governed by simple electrostatics, and (iii) weak intermolecular interactions that make not only structural order but also energy distributions of the frontier orbitals sensitive to atmosphere and interface growth. This article shows an overview on these features with reference to the improved understanding of the orientation-dependent electronic structure, comprehensive mechanisms of molecular doping, and energy-level alignment. Furthermore, the engineering of ionization energy by the control of the electrostatic fields and work function of practical electrodes by contact-induced doping is briefly described for the purpose of highlighting how the electronic structure impacts the performance of organic devices.

  11. Single layer and multilayer vacuum-arc coatings based on the nitride TiAlSiYN: composition, structure, properties

    International Nuclear Information System (INIS)

    Beresnev, V.M.; Litovchenko, S.V.; Nemchenko, U.S.; Srebnyuk, P.A.; Mazilin, B.A.; Sobol, O.V.; Mejlekhov, A.A.; Barmin, A.E.; Serenko, TA.; Pogrebnyak, A.D.; Ivanov, O.N.; Kritsyna, E.V.; Stolbovoj, V.A.; Novikov, V.Yu.; Malikov, L.V.

    2017-01-01

    Using high-technological vacuum-arc evaporation in the atmosphere of nitrogen with ion bombardment, single- and multilayer coatings based on TiAlSiYN with high mechanical characteristics were obtained: hardness of the coatings reached 49.5 GPa, resistance to wear, with the value of the critical point L_C_5 reaching 184.92 N. The peculiarities of radiation-induced effect at applying bias potential U_b were found: formation of nitride coatings based on fcc metallic lattice with the preferred orientation of crystallites with the texture axis [111], as well as simultaneous growth of hardness. Hardness of both single- and multilayer coatings increases by 40...50% at the increase of U_b from 50 to 200 V. Formation of silicon-containing layers of TiAlSiYN during the deposition contributes to reaching increased hardness, which, in the case of single-layer coating obtained at U_b = -200 V is 49.5 GPa, which corresponds to superhard state. The mechanisms of structure formation, defining the resulting mechanical characteristics of single- and multi-layer coatings based on TiAlSiYN nitride have been discussed.

  12. Transparent Conducting Films with Multilayered Structures Formed by Carbon Nanotubes and Reduced Graphene Oxides

    International Nuclear Information System (INIS)

    Kang, Jie Hun; Jang, Hyun Chul; Choi, Jung Mi; Hyeon, Jae Young; Sok, Jung Hyun

    2014-01-01

    The replacement for indium tin oxide (ITO) in electronic displays should have comparable optical transmittance and electrical conductivity while being easy to source and manufacture. However, novel materials such as single walled carbon nanotubes (SWCNTs) and reduced graphene oxides (RGOs) are incapable of addressing these challenges. We demonstrate a simple method to fabricate good transparent conductive films (TCFs) by combining and leveraging the superior optical transparency of RGOs and the excellent electrical conductivity of SWCNTs. This method affords thin multilayers of SWCNTs and RGOs with excellent optical and electrical properties because these properties are correlated with spraying time and the amount of SWCNTs or RGOs. In general, transmittance is advantageous to RGO as conductance is to CNTs. With a view to finding good TCFs with reduced sheet resistance, but with little sacrifice of transmittance, it is natural to explore the combination of CNT and RGO. The sandwiched multilayer of SWCNTs and RGOs exhibited a low sheet resistance of 214.2 Ω/sq, which was comparable to that of SWCNTs, and a transmittance of 60% at a wavelength of 550 nm. To further reduce the sheet resistance and improve the transparency of the multilayer TCFs, Au doping was carried out. The doping, in combination with controlled spraying of the amount of SWCNTs and RGOs, led to multilayers with resistance/transmittance combinations of 141.3 Ω/sq and 70% and 371.5 Ω/sq and 83%. These properties meet the requisite criteria for an ITO replacement.

  13. FDTD-based quantitative analysis of terahertz wave detection for multilayered structures.

    Science.gov (United States)

    Tu, Wanli; Zhong, Shuncong; Shen, Yaochun; Zhou, Qing; Yao, Ligang

    2014-10-01

    Experimental investigations have shown that terahertz pulsed imaging (TPI) is able to quantitatively characterize a range of multilayered media (e.g., biological issues, pharmaceutical tablet coatings, layered polymer composites, etc.). Advanced modeling of the interaction of terahertz radiation with a multilayered medium is required to enable the wide application of terahertz technology in a number of emerging fields, including nondestructive testing. Indeed, there have already been many theoretical analyses performed on the propagation of terahertz radiation in various multilayered media. However, to date, most of these studies used 1D or 2D models, and the dispersive nature of the dielectric layers was not considered or was simplified. In the present work, the theoretical framework of using terahertz waves for the quantitative characterization of multilayered media was established. A 3D model based on the finite difference time domain (FDTD) method is proposed. A batch of pharmaceutical tablets with a single coating layer of different coating thicknesses and different refractive indices was modeled. The reflected terahertz wave from such a sample was computed using the FDTD method, assuming that the incident terahertz wave is broadband, covering a frequency range up to 3.5 THz. The simulated results for all of the pharmaceutical-coated tablets considered were found to be in good agreement with the experimental results obtained using a commercial TPI system. In addition, we studied a three-layered medium to mimic the occurrence of defects in the sample.

  14. The effect of guanidinium functionalization on the structural properties and anion affinity of polyelectrolyte multilayers

    NARCIS (Netherlands)

    Cao, Zheng; Gordiichuk, Pavlo; Loos, Katja; Sudhölter, Ernst Jan Robert; Smet, Louis

    2015-01-01

    Poly(allylamine hydrochloride) (PAH) is chemically functionalized with guanidinium (Gu) moieties in water at room temperature. The resulting PAH-Gu is used to prepare polyelectrolyte multilayers (PEMs) with poly(sodium 4-styrene sulfonate) (PSS) via layer-by-layer deposition. The polyelectrolyte

  15. Wedged multilayer Laue lens

    International Nuclear Information System (INIS)

    Conley, Ray; Liu Chian; Qian Jun; Kewish, Cameron M.; Macrander, Albert T.; Yan Hanfei; Maser, Joerg; Kang, Hyon Chol; Stephenson, G. Brian

    2008-01-01

    A multilayer Laue lens (MLL) is an x-ray focusing optic fabricated from a multilayer structure consisting of thousands of layers of two different materials produced by thin-film deposition. The sequence of layer thicknesses is controlled to satisfy the Fresnel zone plate law and the multilayer is sectioned to form the optic. An improved MLL geometry can be created by growing each layer with an in-plane thickness gradient to form a wedge, so that every interface makes the correct angle with the incident beam for symmetric Bragg diffraction. The ultimate hard x-ray focusing performance of a wedged MLL has been predicted to be significantly better than that of a nonwedged MLL, giving subnanometer resolution with high efficiency. Here, we describe a method to deposit the multilayer structure needed for an ideal wedged MLL and report our initial deposition results to produce these structures

  16. Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Kirsanov, N. Yu.; Latukhina, N. V., E-mail: natalat@yandex.ru; Lizunkova, D. A.; Rogozhina, G. A. [Samara National Research University (Russian Federation); Stepikhova, M. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2017-03-15

    The spectral characteristics of the specular reflectance, photosensitivity, and photoluminescence (PL) of multilayer structures based on porous silicon with rare-earth-element (REE) ions are investigated. It is shown that the photosensitivity of these structures in the wavelength range of 0.4–1.0 μm is higher than in structures free of REEs. The structures with Er{sup 3+} ions exhibit a luminescence response at room temperature in the spectral range from 1.1 to 1.7 μm. The PL spectrum of the erbium impurity is characterized by a fine line structure, which is determined by the splitting of the {sup 4}I{sub 15/2} multiplet of the Er{sup 3+} ion. It is shown that the structures with a porous layer on the working surface have a much lower reflectance in the entire spectral range under study (0.2–1.0 μm).

  17. Multilayer Brain Networks

    Science.gov (United States)

    Vaiana, Michael; Muldoon, Sarah Feldt

    2018-01-01

    The field of neuroscience is facing an unprecedented expanse in the volume and diversity of available data. Traditionally, network models have provided key insights into the structure and function of the brain. With the advent of big data in neuroscience, both more sophisticated models capable of characterizing the increasing complexity of the data and novel methods of quantitative analysis are needed. Recently, multilayer networks, a mathematical extension of traditional networks, have gained increasing popularity in neuroscience due to their ability to capture the full information of multi-model, multi-scale, spatiotemporal data sets. Here, we review multilayer networks and their applications in neuroscience, showing how incorporating the multilayer framework into network neuroscience analysis has uncovered previously hidden features of brain networks. We specifically highlight the use of multilayer networks to model disease, structure-function relationships, network evolution, and link multi-scale data. Finally, we close with a discussion of promising new directions of multilayer network neuroscience research and propose a modified definition of multilayer networks designed to unite and clarify the use of the multilayer formalism in describing real-world systems.

  18. Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction.

    Science.gov (United States)

    Winget, Paul; Schirra, Laura K; Cornil, David; Li, Hong; Coropceanu, Veaceslav; Ndione, Paul F; Sigdel, Ajaya K; Ginley, David S; Berry, Joseph J; Shim, Jaewon; Kim, Hyungchui; Kippelen, Bernard; Brédas, Jean-Luc; Monti, Oliver L A

    2014-07-16

    The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Alpha- and gamma-detection by the avalanche detectors with metal-resistor-semiconductor structure

    International Nuclear Information System (INIS)

    Vetokhin, S.S.; Evtushenko, V.P.; Zalesskij, V.B.; Malyshev, S.A.; Chudakov, V.A.; Shunevich, S.A.

    1992-01-01

    Possibility to use silicon avalanche photodetectors with metal-resistor-semiconductor structure with 0.12 cm 2 photosensitive area as detectors of α-particles, as well as, photodetector of γ-quanta scintillation detector is shown. When detection of α-particles the energy resolution reaches 10%. R energy resolution for avalanche photodetector-CsI(Tl) scintillator system cooled up to - 60 deg C at 59 keV ( 241 Am) and 662 keV ( 137 Cs) energy of γ-quanta constitutes 60% and 80%, respectively. R minimal value in the conducted experiments is determined by the degree of irregularity of avalanche amplification along the photodetector area

  20. Fine structure and optical pumping of spins in individual semiconductor quantum dots

    Science.gov (United States)

    Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

    2008-11-01

    We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

  1. Fine structure and optical pumping of spins in individual semiconductor quantum dots

    International Nuclear Information System (INIS)

    Bracker, Allan S; Gammon, Daniel; Korenev, Vladimir L

    2008-01-01

    We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information

  2. Multiwavelength anomalous diffraction and diffraction anomalous fine structure to study composition and strain of semiconductor nano structures

    International Nuclear Information System (INIS)

    Favre-Nicolin, V.; Proietti, M.G.; Leclere, C.; Renevier, H.; Katcho, N.A.; Richard, M.I.

    2012-01-01

    The aim of this paper is to illustrate the use of Multi-Wavelength Anomalous Diffraction (MAD) and Diffraction Anomalous Fine Structure (DAFS) spectroscopy for the study of structural properties of semiconductor nano-structures. We give a brief introduction on the basic principles of these techniques providing a detailed bibliography. Then we focus on the data reduction and analysis and we give specific examples of their application on three different kinds of semiconductor nano-structures: Ge/Si nano-islands, AlN capped GaN/AlN Quantum Dots and AlGaN/AlN Nano-wires. We show that the combination of MAD and DAFS is a very powerful tool to solve the structural problem of these materials of high technological impact. In particular, the effects of composition and strain on diffraction are disentangled and composition can be determined in a reliable way, even at the interface between nano-structure and substrate. We show the great possibilities of this method and give the reader the basic tools to undertake its use. (authors)

  3. Pressure-induced structural and semiconductor-semiconductor transitions in C o0.5M g0.5C r2O4

    Science.gov (United States)

    Rahman, S.; Saqib, Hajra; Zhang, Jinbo; Errandonea, D.; Menéndez, C.; Cazorla, C.; Samanta, Sudeshna; Li, Xiaodong; Lu, Junling; Wang, Lin

    2018-05-01

    The effect of pressure on the structural, vibrational, and electronic properties of Mg-doped Cr bearing spinel C o0.5M g0.5C r2O4 was studied up to 55 GPa at room-temperature using x-ray diffraction, Raman spectroscopy, electrical transport measurements, and ab initio calculations. We found that the ambient-pressure phase is cubic (spinel-type, F d 3 ¯m ) and underwent a pressure-induced structural transition to a tetragonal phase (space group I 4 ¯m 2 ) above 28 GPa. The ab initio calculation confirmed this first-order phase transition. The resistivity of the sample decreased at low pressures with the existence of a low-pressure (LP) phase and started to increase with the emergence of a high-pressure (HP) phase. The temperature dependent resistivity experiments at different pressures illustrated the wide band gap semiconducting nature of both the LP and HP phases with different activation energies, suggesting a semiconductor-semiconductor transition at HP. No evidence of chemical decomposition or a semiconductor-metal transition was observed in our studies.

  4. Design and Analysis of Multilayered Waveguide Structure With Metal-Dielectric Gratings for Sensing With Reflection Narrowband Notch Filter

    Directory of Open Access Journals (Sweden)

    Guiju ZHANG

    2015-11-01

    Full Text Available Developments in micro and nanofabrication technologies have led a variety of grating waveguide structures (GWS being proposed and implemented in optics and laser application systems. A new design of multilayered nanostructure double-grating is described for reflection notch filter. Thin metal film and dielectric film are used and designed with one-dimensional composite gratings. The results calculated by rigorous coupled-wave analysis (RCWA present that the thin metal film between substrate and grating can produce significant attenuated reflections and efficiency in a broad reflected spectral range. The behavior of such a reflection filter is evaluated for refractive index sensing, which can be applied inside the integrated waveguide structure while succeeding cycles in measurement. The filter peaks are designed and obtained in a visible range with full width half maximum (FWHM of several nanometers to less than one nanometer. The multilayered structure shows a sensitivity of refractive index of 220nm/RIU as changing the surroundings. The reflection spectra are studied under different periods, depths and duty cycles. The passive structure and its characteristics can achieve practical applications in various fields, such as optical sensing, color filtering, Raman spectroscopy and laser technology.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9625

  5. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

    2016-07-18

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  6. Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayers

    International Nuclear Information System (INIS)

    Hu, Y.M.; Lin, C.W.; Huang, J.C.A.

    2006-01-01

    High-quality (0001) oriented ZnO (300 A) film and [ZnO(100 A)/Al(t Al )] 3 (t Al = 0.6, 1.7, 2.8 A) multilayers have been established at room temperature on Al 2 O 3 (0001) substrates by ion-beam sputtering. The structural, optical and electrical properties of multilayers as functions of both the Al thickness and annealing temperature are reported. We have verified that Al thickness and annealing temperature are the key factors to optimize transparency-conducting property in ZnO/Al multilayers. The optimum Al thickness and annealing temperature for ZnO/Al multilayer of 300 A thin is 1.7 A (about one Al atomic layer) and 400 deg. C, respectively, leading to the relatively lower resistivity (2.8 x 10 -3 Ω cm) and higher Hall mobility (10 cm 2 /V.s) without suppression of the visible transmittance (above 85%)

  7. Multilayer Finite-Element Model Application to Define the Bearing Structure Element Stress State of Launch Complexes

    Directory of Open Access Journals (Sweden)

    V. A. Zverev

    2016-01-01

    Full Text Available The article objective is to justify the rationale for selecting the multilayer finite element model parameters of the bearing structure of a general-purpose launch complex unit.A typical design element of the launch complex unit, i.e. a mount of the hydraulic or pneumatic cylinder, block, etc. is under consideration. The mount represents a set of the cantilevered axis and external structural cage. The most loaded element of the cage is disk to which a moment is transferred from the cantilevered axis due to actuator effort acting on it.To calculate the stress-strain state of disk was used a finite element method. Five models of disk mount were created. The only difference in models was the number of layers of the finite elements through the thickness of disk. There were models, which had one, three, five, eight, and fourteen layers of finite elements through the thickness of disk. For each model, we calculated the equivalent stresses arising from the action of the test load. Disk models were formed and calculated using the MSC Nastran complex software.The article presents results in the table to show data of equivalent stresses in each of the multi-layered models and graphically to illustrate the changing equivalent stresses through the thickness of disk.Based on these results we have given advice on selecting the proper number of layers in the model allowing a desirable accuracy of results with the lowest run time. In addition, it is concluded that there is a need to use the multi-layer models in assessing the performance of structural elements in case the stress exceeds the allowable one in their surface layers.

  8. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  9. Stress induced enhanced polarization in multilayer BiFeO{sub 3}/BaTiO{sub 3} structure with improved energy storage properties

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Savita [Department of Physics and Astrophysics, University of Delhi, Delhi (India); Department of Applied Physics, Delhi Technological University, Delhi (India); Tomar, Monika [Physics Department, Miranda House, University of Delhi, Delhi (India); Kumar, Ashok [CSIR-National Physical Laboratory, Dr. K.S .Krishnan Marg, Delhi (India); Puri, Nitin K. [Department of Applied Physics, Delhi Technological University, Delhi (India); Gupta, Vinay, E-mail: vgupta@physics.du.ac.in, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi (India)

    2015-10-15

    Present work reports the fabrication of a multilayer (5-layer) structure of BiFeO{sub 3}(BFO)/BaTiO{sub 3}(BTO) using spin-coating technique. The crystallographic structure, surface morphology and ferroelectric behavior of multilayer structure in metal-ferroelectric-metal capacitor have been studied. Le-Bail refinement of X-ray diffraction data revealed the formation of polycrystalline pure perovskite phase with induced stress. The values of remnant (P{sub r}) and saturation polarization (P{sub s}) for BFO/BTO multilayer structure are found to be 38.14 μC/cm{sup 2} and 71.54 μC/cm{sup 2} respectively, which are much higher than the corresponding values reported for bare BFO thin film. A large value of dielectric constant of 187 has been obtained for multilayer structure with a low leakage current density of 1.09 × 10{sup −7} A/cm{sup 2} at applied bias of 10 V. The BFO/BTO multilayer structure favors the enhanced energy storage capacity as compared to bare BFO thin film with improved values of energy-density and charge-discharge efficiency as 121 mJ/cm{sup 3} and 59% respectively, suggesting futuristic energy storage applications.

  10. Stress induced enhanced polarization in multilayer BiFeO3/BaTiO3 structure with improved energy storage properties

    Directory of Open Access Journals (Sweden)

    Savita Sharma

    2015-10-01

    Full Text Available Present work reports the fabrication of a multilayer (5-layer structure of BiFeO3(BFO/BaTiO3(BTO using spin-coating technique. The crystallographic structure, surface morphology and ferroelectric behavior of multilayer structure in metal-ferroelectric-metal capacitor have been studied. Le-Bail refinement of X-ray diffraction data revealed the formation of polycrystalline pure perovskite phase with induced stress. The values of remnant (Pr and saturation polarization (Ps for BFO/BTO multilayer structure are found to be 38.14 μC/cm2 and 71.54 μC/cm2 respectively, which are much higher than the corresponding values reported for bare BFO thin film. A large value of dielectric constant of 187 has been obtained for multilayer structure with a low leakage current density of 1.09 × 10−7 A/cm2 at applied bias of 10 V. The BFO/BTO multilayer structure favors the enhanced energy storage capacity as compared to bare BFO thin film with improved values of energy-density and charge-discharge efficiency as 121 mJ/cm3 and 59% respectively, suggesting futuristic energy storage applications.

  11. Structural, mechanical and tribocorrosion behaviour in artificial seawater of CrN/AlN nano-multilayer coatings on F690 steel substrates

    Science.gov (United States)

    Ma, Fuliang; Li, Jinlong; Zeng, Zhixiang; Gao, Yimin

    2018-01-01

    The CrN monolayer and CrN/AlN nano-multilayer coating were successfully fabricated by reactive magnetron sputtering on F690 steel. The results show that CrN monolayer exhibits a face centered cubic crystalline structure with (111) preferred orientation and CrN/AlN nano-multilayer coating has a (200) preferred orientation. This design of the nano-multilayer can interrupt the continuous growth of columnar crystals making the coating denser. The CrN/AlN nano-multilayer coating has a better wear resistance and corrosion resistance compared with the CrN monolayer coating. The tribocorrosion tests reveal that the evolution of potential and current density of F690 steel and CrN monolayer or CrN/AlN nano-multilayer coating see an opposite trend under the simultaneous action of wear and corrosion, which is attributed to that F690 steel is a non-passive material and PVD coatings is a passive material. The nano-multilayer structure has a good ;Pore Sealing Effect;, and the corrosive solution is difficult to pass through the coating to corrode the substrate.

  12. Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

    International Nuclear Information System (INIS)

    McPheeters, Claiborne O; Yu, Edward T; Hu, Dongzhi; Schaadt, Daniel M

    2012-01-01

    Sub-wavelength photonic structures and nanoscale materials have the potential to greatly improve the efficiencies of solar cells by enabling maximum absorption of sunlight. Semiconductor heterostructures provide versatile opportunities for improving absorption of infrared radiation in photovoltaic devices, which accounts for half of the power in the solar spectrum. These ideas can be combined in quantum-well solar cells and related structures in which sub-wavelength metal and dielectric scattering elements are integrated for light trapping. Measurements and simulations of GaAs solar cells with less than one micron of active material demonstrate the benefits of incorporating In(Ga)As quantum-wells and quantum-dots to improve their performance. Simulations that incorporate a realistic model of absorption in quantum-wells show that the use of broadband photonic structures with such devices can substantially improve the benefit of incorporating heterostructures, enabling meaningful improvements in their performance

  13. Tuning the band gap in hybrid tin iodide perovskite semiconductors using structural templating.

    Science.gov (United States)

    Knutson, Jeremy L; Martin, James D; Mitzi, David B

    2005-06-27

    Structural distortions within the extensive family of organic/inorganic hybrid tin iodide perovskite semiconductors are correlated with their experimental exciton energies and calculated band gaps. The extent of the in- and out-of-plane angular distortion of the SnI4(2-) perovskite sheets is largely determined by the relative charge density and steric requirements of the organic cations. Variation of the in-plane Sn-I-Sn bond angle was demonstrated to have the greatest impact on the tuning of the band gap, and the equatorial Sn-I bond distances have a significant secondary influence. Extended Hückel tight-binding band calculations are employed to decipher the crystal orbital origins of the structural effects that fine-tune the band structure. The calculations suggest that it may be possible to tune the band gap by as much as 1 eV using the templating influence of the organic cation.

  14. Gyrotropic-nihility state in a composite ferrite-semiconductor structure

    International Nuclear Information System (INIS)

    Tuz, Vladimir R

    2015-01-01

    Characteristics of the gyrotropic-nihility state are studied in a finely-stratified ferrite-semiconductor structure, which is under an action of an external static magnetic field. Investigations are carried out with the assistance of the effective medium theory, according to which the studied structure is approximated as a uniform gyroelectromagnetic medium. The theory of the gyrotropic-nihility state is developed in terms of the eigenwaves propagation in such gyroelectromagnetic medium. The frequency and angular dependencies of the transmittance, reflectance and absorption coefficient are presented. It turns out that in the frequency band around the frequency of gyrotropic-nihility state the studied structure appears to be matched to free space with both the refractive index and the wave impedance which results in its high transmittance almost in the entire range of angles of the electromagnetic wave incidence. (paper)

  15. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    International Nuclear Information System (INIS)

    Kozyukhin, S.; Golovchak, R.; Kovalskiy, A.; Shpotyuk, O.; Jain, H.

    2011-01-01

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As x Se 100−x , As x S 100−x , Ge x Se 100−x and Ge x S 100−x chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  16. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    Energy Technology Data Exchange (ETDEWEB)

    Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

    2011-04-15

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  17. Evaluation of electrical, structural, thermal and optical properties of Co_3O_4 semiconductor

    International Nuclear Information System (INIS)

    Dias, Jeferson A.; Maestrelli, Sylma C.; Morelli, Marcio R.

    2016-01-01

    Among the new semiconductors, the tricobalt tetraoxide is a material of increasing interest; nevertheless, there is a limited number of studies about its properties. Thus, this work has investigated the structural, thermal, optical and electronic properties of Co_3O_4 and its correlation with structure and microstructure. For that, the commercial material was characterized by X-ray diffraction, thermal analysis, diffuse reflectance, FTIR and impedance spectroscopy. The results have shown that the assessed Co_3O_4 has non-stoichiometric spinel structure, presenting a band gap energy capable to completely absorb the visible spectra (1.75 eV). Furthermore, it can be visualized in infrared spectra the bands related to Co-O bonds. The activation energy of electric conduction was 0.35 eV related to the hopping mechanism. Therefore, the results confirm the potentiality of use of Co_3O_4 in optoelectronic devices due to its promising properties for technological utilization. (author)

  18. Raman scattering in semiconductor structures based on monophthalocyanine and triphthalocyanine molecules incorporating erbium ions

    International Nuclear Information System (INIS)

    Belogorokhov, I. A.; Tikhonov, E. V.; Breusova, M. O.; Pushkarev, V. E.; Zoteev, A. V.; Tomilova, L. G.; Khokhlov, D. R.

    2007-01-01

    Semiconductor structures of the type of butyl-substituted erbium monophthalocyanine and triphthalocyanine are studied by Raman spectroscopy. It is shown that, when the sandwich-like structure of the molecule incorporating two complexing atoms between the ligands is considered instead of the planar molecular structure with one ligand and one metal atom, a series of lines appears in the Raman spectrum. In this series, the wave numbers of the lines represent an arithmetic progression with the arithmetical ratio ∼80 cm -1 . It is suggested that this feature is due to the larger number of organic molecules per metal atom in the triphthalocyanine complex, and the four Raman peaks at the frequencies 122, 208, 280, and 362 cm -1 are the manifestation of slight out-of-plane vibrations of the phthalocyanine ligands

  19. Simulation of the passive UHF devices on the basis of high-temperature superconductors for planar multilayer anisotropic structures

    CERN Document Server

    Gashinova, M S; Kolmakov, Y A; Vendik, I B

    2002-01-01

    The electrodynamic analysis of the arbitrary multilayer medium, including the anisotropic layers and containing the arbitrary form conductors is carried out. Thin layers of the high-temperature superconductor (HTSC) are considered as conductors. Determination of the surface current density is a result of the numerical solution. Accounting for the losses in the HTSC is accomplished on the basis of determining the equivalent surface impedance and using the Leontovich boundary conditions. Anisotropy is accounted for in the determination of the Green spectral dyad for the structure with arbitrary number of the anisotropic or isotropic layers. Calculation of the surface current density distribution demonstrates the correctness of the proposed model

  20. structural and magnetic properties of Fe(20Å /Ag(xÅ/Fe(20Å hetro-multilayers

    Directory of Open Access Journals (Sweden)

    P Ghahramaninezhad

    2015-07-01

    Full Text Available We have deposited Fe/Ag/Fe multilayer by physical vapor deposition (PVDmethod in different Ag thickness as spacer working in a vacuum of 2×10-6mbar. The structural properties , magnetic response of the samples at low temperatures and room temperature was investigated by XRD, physical properties measurement system (PPMS and vibrating sample magnetometer (VSM respectively. Hysteresis loops show that the easy axis of magnetization is in plane of the film . Also the magnetization and Hc of samples decrease with increasing temperature.

  1. Solar-blind ultraviolet band-pass filter based on metal—dielectric multilayer structures

    International Nuclear Information System (INIS)

    Wang Tian-Jiao; Xu Wei-Zong; Lu Hai; Ren Fang-Fang; Chen Dun-Jun; Zhang Rong; Zheng You-Dou

    2014-01-01

    Solar-blind ultraviolet (UV) band-pass filter has significant value in many scientific, commercial, and military applications, in which the detection of weak UV signal against a strong background of solar radiation is required. In this work, a solar-blind filter is designed based on the concept of “transparent metal”. The filter consisting of Al/SiO 2 multilayers could exhibit a high transmission in the solar-blind wavelength region and a wide stopband extending from near-ultraviolet to infrared wavelength range. The central wavelength, bandwidth, Q factor, and rejection ratio of the passband are numerically studied as a function of individual layer thickness and multilayer period. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  2. Correlation of Photocatalytic Activity with Band Structure of Low-dimensional Semiconductor Nanostructures

    Science.gov (United States)

    Meng, Fanke

    Photocatalytic hydrogen generation by water splitting is a promising technique to produce clean and renewable solar fuel. The development of effective semiconductor photocatalysts to obtain efficient photocatalytic activity is the key objective. However, two critical reasons prevent wide applications of semiconductor photocatalysts: low light usage efficiency and high rates of charge recombination. In this dissertation, several low-dimensional semiconductors were synthesized with hydrothermal, hydrolysis, and chemical impregnation methods. The band structures of the low-dimensional semiconductor materials were engineered to overcome the above mentioned two shortcomings. In addition, the correlation between the photocatalytic activity of the low-dimensional semiconductor materials and their band structures were studied. First, we studied the effect of oxygen vacancies on the photocatalytic activity of one-dimensional anatase TiO2 nanobelts. Given that the oxygen vacancy plays a significant role in band structure and photocatalytic performance of semiconductors, oxygen vacancies were introduced into the anatase TiO2 nanobelts during reduction in H2 at high temperature. The oxygen vacancies of the TiO2 nanobelts boosted visible-light-responsive photocatalytic activity but weakened ultraviolet-light-responsive photocatalytic activity. As oxygen vacancies are commonly introduced by dopants, these results give insight into why doping is not always beneficial to the overall photocatalytic performance despite increases in absorption. Second, we improved the photocatalytic performance of two-dimensional lanthanum titanate (La2Ti2 O7) nanosheets, which are widely studied as an efficient photocatalyst due to the unique layered crystal structure. Nitrogen was doped into the La2Ti2O7 nanosheets and then Pt nanoparticles were loaded onto the La2Ti2O7 nanosheets. Doping nitrogen narrowed the band gap of the La2Ti 2O7 nanosheets by introducing a continuum of states by the valence

  3. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  4. Matrix solution to longitudinal impedance of multi-layer circular structures

    Energy Technology Data Exchange (ETDEWEB)

    Hahn,H.

    2008-10-01

    A matrix method in which radial wave propagation is treated in analogy to longitudinal transmission lines is presented and applied to finding the longitudinal coupling impedance of axially symmetric multi-layer beam tubes. The method is demonstrated in the case of a Higher Order Mode ferrite absorber with an inserted coated ceramic beam tube. The screening of the ferrite damping properties by the dielectric beam tube is discussed.

  5. Bond particle model for semiconductor melts and its application to liquid structure germanium

    International Nuclear Information System (INIS)

    Ferrante, A.; Tosi, M.P.

    1988-08-01

    A simple type of liquid state model is proposed to describe on a primitive level the melt of an elemental group IV semiconductor as a mixture of atoms and bond particles. The latter, on increase of a coupling strength parameter becomes increasingly localized between pairs of atoms up to local tetrahedral coordination of atoms by bond particles. Angular interatomic correlations are built into the model as bond particle localization grows, even though the bare interactions between the components of the liquid are formally described solely in terms of central pair potentials. The model is solved for liquid structure by standard integral equation techniques of liquid state theory and by Monte Carlo simulation, for values of the parameters which are appropriate to liquid germanium down to strongly supercooled states. The calculated liquid structure is compared with the results of diffraction experiments on liquid germanium near freezing and discussed in relation to diffraction data on amorphous germanium. The model suggests simple melting criteria for elemental and polar semiconductors, which are empirically verified. (author). 25 refs, 9 figs, 3 tabs

  6. Structural and optical studies of local disorder sensitivity in natural organic-inorganic self-assembled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Vijaya Prakash, G; Pradeesh, K [Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi, New Delhi (India); Ratnani, R; Saraswat, K [Department of Pure and Applied Chemistry, MDS University, Ajmer (India); Light, M E [School of Chemistry, University of Southampton, Southampton (United Kingdom); Baumberg, J J, E-mail: prakash@physics.iitd.ac.i [Nanophotonic Centre, Cavendish Laboratory, University Cambridge, Cambridge CB3 OHE (United Kingdom)

    2009-09-21

    The structural and optical spectra of two related lead iodide (PbI) based self-assembled hybrid organic-inorganic semiconductors are compared. During the synthesis, depending on the bridging of organic moiety intercalated between the PbI two-dimensional planes, different crystal structures are produced. These entirely different networks show different structural and optical features, including excitonic bandgaps. In particular, the modified organic environment of the excitons is sensitive to the local disorder both in single crystal and thin film forms. Such information is vital for incorporating these semiconductors into photonic device architectures.

  7. Exploring interface morphology of a deeply buried layer in periodic multilayer

    Energy Technology Data Exchange (ETDEWEB)

    Das, Gangadhar; Srivastava, A. K.; Tiwari, M. K., E-mail: mktiwari@rrcat.gov.in [Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013, Madhya Pradesh (India); Homi Bhabha National Institute, Anushaktinagar, Mumbai-400094, Maharashtra (India); Khooha, Ajay; Singh, A. K. [Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013, Madhya Pradesh (India)

    2016-06-27

    Long-term durability of a thin film device is strongly correlated with the nature of interface structure associated between different constituent layers. Synthetic periodic multilayer structures are primarily employed as artificial X-ray Bragg reflectors in many applications, and their reflection efficiency is predominantly dictated by the nature of the buried interfaces between the different layers. Herein, we demonstrate the applicability of the combined analysis approach of the X-ray reflectivity and grazing incidence X-ray fluorescence measurements for the reliable and precise determination of a buried interface structure inside periodic X-ray multilayer structures. X-ray standing wave field (XSW) generated under Bragg reflection condition is used to probe the different constituent layers of the W- B{sub 4}C multilayer structure at 10 keV and 12 keV incident X-ray energies. Our results show that the XSW assisted fluorescence measurements are markedly sensitive to the location and interface morphology of a buried layer structure inside a periodic multilayer structure. The cross sectional transmission electron microscopy results obtained on the W-B{sub 4}C multilayer structure provide a deeper look on the overall reliability and accuracy of the XSW method. The method described here would also be applicable for nondestructive characterization of a wide range of thin film based semiconductor and optical devices.

  8. Amorphous FeCoSiB for exchange bias coupled and decoupled magnetoelectric multilayer systems: Real-structure and magnetic properties

    International Nuclear Information System (INIS)

    Hrkac, V.; Strobel, J.; Kienle, L.; Lage, E.; Köppel, G.; McCord, J.; Quandt, E.; Meyners, D.

    2014-01-01

    The effect of field annealing for exchanged biased multilayer films is studied with respect to the resultant structural and magnetic film properties. The presented multilayer stacks comprise repeating sequences of Ta/Cu/(1 1 1) textured antiferromagnetic Mn 70 Ir 30 /amorphous ferromagnetic Fe 70.2 Co 7.8 Si 12 B 10 . Within the ferromagnetic layers crystalline filaments are observed. An additional Ta layer between the antiferromagnet and ferromagnet is used in order to investigate and separate the influence of the common Mn 70 Ir 30 /Fe 70.2 Co 7.8 Si 12 B 10 interface on the occurring filaments and structural changes. In situ and ex situ transmission electron microscopy is used for a comprehensive structure characterization of multilayer stacks for selected temperature stages. Up to 250 °C, the multilayers are structurally unaltered and preserve the as-deposited condition. A deliberate increase to 350 °C exhibits different crystallization processes for the films, depending on the presence of crystal nuclei within the amorphous ferromagnetic layer. The influence of volume-to-surface ratio of the multilayer stacks to the crystallization process is emphasized by the comparison of in situ and ex situ investigations as the respective specimen thickness is changed. Complementary magnetic studies reveal a defined exchange bias obtained at the first annealing step and a decrease of total anisotropy field with partial crystallization after the subsequent annealing at 350 °C.

  9. Interface properties of Fe/MgO/Cu-phthalocyanine metal-insulator-organic semiconductor structures

    International Nuclear Information System (INIS)

    Lee, Nyunjong; Bae, Yujeong; Kim, Taehee; Ito, Eisuke; Hara, Masahiko

    2014-01-01

    Hybrid interface structures consisting of organic copper-phthalocyanine (CuPc) and ferromagnetic metal Fe(001) with and without a MgO(001) cover were investigated by using surface sensitive techniques of X-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. A systematic study of the energy level alignment at the interfaces was carried out. For the hybrid interfaces considered here, our results indicate that the insertion of an artificially-grown ultra-thin oxide layer MgO(001) can prevent Femi level pinning and induce a rather large interface dipole, thereby resulting in remarkable CuPc Fermi level shifts when the thickness of the CuPc film is less than 3 nm. This study provides a better understanding of spin filtering in MgO-based organic spin devices and a new way to alter the interface electronic structure of metal/organic semiconductor hybrid systems.

  10. Characterization of TBP containing polysiloxane membrane/insulator/semiconductor structures for hexavalent chromium detection

    Energy Technology Data Exchange (ETDEWEB)

    Zazoua, A. [Universite de Jijel, BP 98, Ouled Aissa, 18000 Jijel (Algeria); Universite de Annaba, BP 12, El-Hadjar, Annaba (Algeria); Kherrat, R.; Samar, M.H. [Universite de Annaba, BP 12, El-Hadjar, Annaba (Algeria); Errachid, A. [Laboratori de Nanobioenginyeria-IBEC, CIBER, Parc Cientific de Barcelona (PCB)-Departament d' Electronica. Universitat de Barcelona, C/Marti i Franques 1, 08028 Barcelona (Spain); Jaffrezic-Renault, N. [LSA - UMR 5180 CNRS - Universite Claude Bernard Lyon 1, 69622 Villeurbanne cedex (France)], E-mail: nicole.jaffrezic@univ-lyon1.fr; Bessueille, F.; Leonard, D. [LSA - UMR 5180 CNRS - Universite Claude Bernard Lyon 1, 69622 Villeurbanne cedex (France)

    2008-07-01

    A hexavalent chromium-sensitive EMIS sensor (electrolyte membrane insulator semiconductor sensor) is prepared by deposition of a tributylphosphate (TBP) ionophore-containing siloprene membrane on a Si/SiO{sub 2}/Si{sub 3}N{sub 4} structure. The developed EMIS sensor was studied by means of impedance spectroscopy, capacitance-voltage, X-ray photoelectron spectrometry and FT-IR spectroscopy. From the flat-band shift of the EMIS structure, the nersntian response to the anionic species Cr{sub 2}O{sub 7}{sup -} was demonstrated. The linear range of detection is 10{sup -4} M to 10{sup -1} M and the detection limit is 10{sup -5} M. Sulfate and chloride anions are shown not to be interfering whereas carbonate ions present a pK{sup pot} equal to 0.19.

  11. Mode structure of delay-coupled semiconductor lasers: influence of the pump current

    International Nuclear Information System (INIS)

    Erzgraeber, Hartmut; Krauskopf, Bernd; Lenstra, Daan

    2005-01-01

    We consider two identical, mutually delay-coupled semiconductor lasers and show that their compound laser modes (CLMs)-the basic continuous wave solutions-depend rather sensitively on the pump current of the lasers. Specifically, we show with figures and accompanying animations how the underlying CLM structure and the associated locking region, where both lasers operate stably with the same frequency, change as a function of the pump current. Our results provide a natural transition between rather different CLM structures that have been reported in the literature. Moreover, we demonstrate how the locking region as well as the different types of instabilities at its boundary depend on the pump current. This is of fundamental interest for the dynamics of coupled lasers and their possible application

  12. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  13. Theory of spin-polarized transport in ferromagnet-semiconductor structures: Unified description of ballistic and diffusive transport

    International Nuclear Information System (INIS)

    Lipperheide, R.; Wille, U.

    2006-01-01

    A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework for studying the interplay of spin relaxation and transport mechanism in spintronic devices. Transport inside the (nondegenerate) semiconductor is described in terms of a thermoballistic current, in which electrons move ballistically in the electric field arising from internal and external electrostatic potentials, and are thermalized at randomly distributed equilibration points. Spin relaxation is allowed to take place during the ballistic motion. For arbitrary potential profile and arbitrary values of the momentum and spin relaxation lengths, an integral equation for a spin transport function determining the spin polarization in the semiconductor is derived. For field-driven transport in a homogeneous semiconductor, the integral equation can be converted into a second-order differential equation that generalizes the spin drift-diffusion equation. The spin polarization in ferromagnet-semiconductor structures is obtained by matching the spin-resolved chemical potentials at the interfaces, with allowance for spin-selective interface resistances. Illustrative examples are considered

  14. Salt Effects on Surface Structures of Polyelectrolyte Multilayers (PEMs) Investigated by Vibrational Sum Frequency Generation (SFG) Spectroscopy.

    Science.gov (United States)

    Ge, Aimin; Matsusaki, Michiya; Qiao, Lin; Akashi, Mitsuru; Ye, Shen

    2016-04-26

    Sum frequency generation (SFG) vibrational spectroscopy was employed to investigate the surface structures of polyelectrolyte multilayers (PEMs) constructed by sequentially alternating adsorption of poly(diallyldimethylammonium chloride) (PDDA) and poly(styrenesulfonate) (PSS). It was found that the surface structures and surface charge density of the as-deposited PEMs of PDDA/PSS significantly depend on the concentration of sodium chloride (NaCl) present in the polyelectrolyte solutions. Furthermore, it was found that the surface structure of the as-deposited PEMs is in a metastable state and will reach the equilibrium state by diffusion of the polyelectrolyte chain after an aging process, resulting in a polyelectrolyte mixture on the PEM surfaces.

  15. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

    International Nuclear Information System (INIS)

    Takagi, Akihiro; Nomura, Kenji; Ohta, Hiromichi; Yanagi, Hiroshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2005-01-01

    Carrier transport properties in amorphous oxide semiconductor InGaZnO 4 (a-IGZO) thin films were investigated in detail using temperature dependence of Hall measurements. It was found that Hall mobility increased distinctly as carrier concentration increased. Unlikely conventional amorphous semiconductors such as a-Si/H, definite normal Hall voltage signals were observed on the films with carrier concentrations (N e )>10 16 cm -3 , and Hall mobilities as large as 15 cm 2 (Vs) -1 were attained in the films with N e >10 20 cm -3 . When N e was less than 10 19 cm -3 , the temperature dependence of Hall mobility showed thermally-activated behavior in spite that carrier concentration was independent of temperature. While, it changed to almost degenerate conduction at N e >10 18 cm -3 . These behaviors are similar to those observed in single-crystalline IGZO, and are explained by percolation conduction through distributed potential barriers which are formed in the vicinity of the conduction band bottom due to the randomness of the amorphous structure. The effective mass of a-IGZO was estimated to be ∼0.34 m e (m e is the mass of free electron) from optical data, which is almost the same as that of crystalline IGZO (∼0.32 m e )

  16. Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

    International Nuclear Information System (INIS)

    Ueda, Kazushige; Hiramatsu, Hidenori; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

    2006-01-01

    Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as wide-gap semiconductors and their basic optical and electrical properties were examined. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were examined by normal/inverse photoemission spectroscopy and energy band calculations. The results of the examinations suggested that these materials possess unique features more than simple wide-gap semiconductors. Namely, the layered oxychalcogenides are considered to be extremely thin quantum wells composed of the oxide and chalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix. Observation of step-like absorption edges, large band gap energy and large exciton binding energy demonstrated these features originating from 2D density of states and quantum size effects in these layered materials

  17. Stability of polarization in organic ferroelectric metal-insulator-semiconductor (MIS) structures

    Energy Technology Data Exchange (ETDEWEB)

    Kalbitz, Rene; Fruebing, Peter; Gerhard, Reimund [Department of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Strasse 24-25, 14476, Potsdam (Germany); Taylor, Martin [School of Electronic Engineering, Bangor University, Dean Street, Bangor Gwynedd, LL57 1UT (United Kingdom)

    2011-07-01

    Ferroelectric field effect transistors (FeFETs) offer the prospect of an organic-based memory device. Since the charge transport in such devices is confined to the interface between the insulator and the semiconductor, the focus of the present study was on the investigation of this region. Capacitance-voltage (C-V) measurements of all-organic MIS devices with poly(vinylidenefluoride- trifluoroethylene) (P(VDF-TrFE)) as gate insulator and poly(3-hexylthiophene)(P3HT) as semiconductor were carried out. When the structure was driven into depletion, a positive flat-band voltage shift was observed arising from the change in polarization state of the ferroelectric insulator. When driven into accumulation, the polarization was reversed. It is shown that both polarization states are stable. However, negative charge trapped at the interface during the depletion cycle masks the negative shift in flat-band voltage expected during the sweep to accumulation voltages. Measurements on P(VDF-TrFE)/P3HT based FeFETs yield further evidence for fixed charges at the interface. Output characteristics suggest the injection of negative charges into the interface region when a depletion voltage is applied between source and gate contact.

  18. Glial cell adhesion and protein adsorption on SAM coated semiconductor and glass surfaces of a microfluidic structure

    Science.gov (United States)

    Sasaki, Darryl Y.; Cox, Jimmy D.; Follstaedt, Susan C.; Curry, Mark S.; Skirboll, Steven K.; Gourley, Paul L.

    2001-05-01

    The development of microsystems that merge biological materials with microfabricated structures is highly dependent on the successful interfacial interactions between these innately incompatible materials. Surface passivation of semiconductor and glass surfaces with thin organic films can attenuate the adhesion of proteins and cells that lead to biofilm formation and biofouling of fluidic structures. We have examined the adhesion of glial cells and serum albumin proteins to microfabricated glass and semiconductor surfaces coated with self-assembled monolayers of octadecyltrimethoxysilane and N-(triethoxysilylpropyl)-O- polyethylene oxide urethane, to evaluate the biocompatibility and surface passivation those coatings provide.

  19. Synchrotron radiation studies of inorganic-organic semiconductor interfaces

    International Nuclear Information System (INIS)

    Evans, D.A.; Steiner, H.J.; Vearey-Roberts, A.R.; Bushell, A.; Cabailh, G.; O'Brien, S.; Wells, J.W.; McGovern, I.T.; Dhanak, V.R.; Kampen, T.U.; Zahn, D.R.T.; Batchelor, D.

    2003-01-01

    Organic semiconductors (polymers and small molecules) are widely used in electronic and optoelectronic technologies. Many devices are based on multilayer structures where interfaces play a central role in device performance and where inorganic semiconductor models are inadequate. Synchrotron radiation techniques such as photoelectron spectroscopy (PES), near-edge X-ray absorption fine structure (NEXAFS) and X-ray standing wave spectroscopy (XSW) provide a powerful means of probing the structural, electronic and chemical properties of these interfaces. The surface-specificity of these techniques allows key properties to be monitored as the heterostructure is fabricated. This methodology has been directed at the growth of hybrid organic-inorganic semiconductor interfaces involving copper phthalocyanine as the model organic material and InSb and GaAs as the model inorganic semiconductor substrates. Core level PES has revealed that these interfaces are abrupt and chemically inert due to the weak bonding between the molecules and the inorganic semiconductor. NEXAFS studies have shown that there is a preferred orientation of the molecules within the organic semiconductor layers. The valence band offsets for the heterojunctions have been directly measured using valence level PES and were found to be very different for copper phthalocyanine on InSb and GaAs (0.7 and -0.3 eV respectively) although an interface dipole is present in both cases

  20. Structural Design Principle of Small-Molecule Organic Semiconductors for Metal-Free, Visible-Light-Promoted Photocatalysis.

    Science.gov (United States)

    Wang, Lei; Huang, Wei; Li, Run; Gehrig, Dominik; Blom, Paul W M; Landfester, Katharina; Zhang, Kai A I

    2016-08-08

    Herein, we report on the structural design principle of small-molecule organic semiconductors as metal-free, pure organic and visible light-active photocatalysts. Two series of electron-donor and acceptor-type organic semiconductor molecules were synthesized to meet crucial requirements, such as 1) absorption range in the visible region, 2) sufficient photoredox potential, and 3) long lifetime of photogenerated excitons. The photocatalytic activity was demonstrated in the intermolecular C-H functionalization of electron-rich heteroaromates with malonate derivatives. A mechanistic study of the light-induced electron transport between the organic photocatalyst, substrate, and the sacrificial agent are described. With their tunable absorption range and defined energy-band structure, the small-molecule organic semiconductors could offer a new class of metal-free and visible light-active photocatalysts for chemical reactions. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Structure evolution of multilayer materials of heat-resistant intermetallic compounds under the influence of temperature in the process of diffusion welding under pressure and their mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Korzhov, Valeriy P.; Karpov, Michael I.; Prokhorov, Dmitriy V. [Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka (Russian Federation)

    2013-07-01

    Multilayer materials of high-resistant intermetallic compounds of some transition metals with aluminum and silicon were obtained by diffusion welding of packages, collected from a large number of the respective foils, such as niobium and aluminum. Materials of intermetallics with silicon were obtained by the welding of packages built from metal foils with Si-coating. The change in the structure according to the temperature of the welding was studied, and the high-temperature bending strength was determined. Key words: multilayer composite, high-resistant material, intermetallic compound, diffusion welding, package rolling, layered structure, bending strength.

  2. Structure and stability of semiconductor tip apexes for atomic force microscopy

    International Nuclear Information System (INIS)

    Pou, P; Perez, R; Ghasemi, S A; Goedecker, S; Jelinek, P; Lenosky, T

    2009-01-01

    The short range force between the tip and the surface atoms, that is responsible for atomic-scale contrast in atomic force microscopy (AFM), is mainly controlled by the tip apex. Thus, the ability to image, manipulate and chemically identify single atoms in semiconductor surfaces is ultimately determined by the apex structure and its composition. Here we present a detailed and systematic study of the most common structures that can be expected at the apex of the Si tips used in experiments. We tackle the determination of the structure and stability of Si tips with three different approaches: (i) first principles simulations of small tip apexes; (ii) simulated annealing of a Si cluster; and (iii) a minima hopping study of large Si tips. We have probed the tip apexes by making atomic contacts between the tips and then compared force-distance curves with the experimental short range forces obtained with dynamic force spectroscopy. The main conclusion is that although there are multiple stable solutions for the atomically sharp tip apexes, they can be grouped into a few types with characteristic atomic structures and properties. We also show that the structure of the last atomic layers in a tip apex can be both crystalline and amorphous. We corroborate that the atomically sharp tips are thermodynamically stable and that the tip-surface interaction helps to produce the atomic protrusion needed to get atomic resolution.

  3. Synthesis of multilayered structure of nano-dimensional silica glass/reduced graphene oxide for advanced electrochemical applications.

    Science.gov (United States)

    Ghosh, Arnab; Miah, Milon; Majumder, Chinmoy; Bag, Shekhar; Chakravorty, Dipankar; Saha, Shyamal Kumar

    2018-03-28

    During the past few years, intensive research has been carried out to design new functional materials for superior electrochemical applications. Due to low storage capacity and low charge transport, silica based glasses have not yet been investigated for their supercapacitive behavior. Therefore, in the present study, a multilayered structure of silica-based nanoglass and reduced graphene oxide has been designed to remarkably enhance the specific capacitance by exploiting the porosity, large surface area, sufficient dangling bonds in the nanoglass and high electrical conductivity of rGO. The charge transport in the composite structure is also investigated to understand the electrochemical properties. It is found that Simmons tunneling or direct tunneling is the dominant mechanism of charge conduction between the graphene layers via the potential barrier of silica nanoglass phase. We believe that this study will open up a new area in the design of glass-based two-dimensional nanocomposites for superior supercapacitor applications.

  4. Structure determination of a multilayer with an island-like overlayer using hard x-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Isomura, N., E-mail: isomura@mosk.tytlabs.co.jp; Kataoka, K.; Horibuchi, K.; Dohmae, K.; Kitazumi, K.; Takahashi, N.; Kimoto, Y. [Toyota Central R& D Laboratories, Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Oji, H.; Cui, Y.-T.; Son, J.-Y. [Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo, Hyogo 679-5198 (Japan)

    2016-07-27

    We use hard X-ray photoelectron spectroscopy (HAXPES) to obtain the surface structure of a multilayer Au/SiO{sub 2}/Si substrate sample with an island-like overlayer. Photoelectron intensities are measured as a function of incident photon energy (PE) and take-off angle (TOA, measured from the sample surface). The Au layer coverage and Au and SiO{sub 2} layer thicknesses are obtained by the PE dependence, and are used for the following TOA analysis. The Au island lateral width in the cross section is obtained by the TOA dependence, including information about surface roughness, in consideration of the island shadowing at small TOAs. In both cases, curve-fitting analysis is conducted. The surface structure, which consists of layer thicknesses, overlayer coverage and island width, is determined nondestructively by a combination of PE and TOA dependent HAXPES measurements.

  5. Role of interface states on electron transport in a-Si:H/nc-Si:H multilayer structures

    Science.gov (United States)

    Yadav, Asha; Kumari, Juhi; Agarwal, Pratima

    2018-05-01

    In this paper we report, I-V characteristic of a-Si:H/nc-Si:H multilayer structures in lateral as well as transverse direction. In lateral geometry, where the interfaces are parallel to the direction of electronic transport, residual photo conductivity (persistent photoconductivity) is observed after the light was turned off. On the other hand, in transverse geometry, where interfaces are along the direction of electronic transport, the space charge limited currents are affected and higher density of states is obtained. The PPC was more in the structures where numbers of such interface were more. These results have been understood in terms of the charge carriers trapped at the interface, which influence the electronic transport.

  6. Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

    International Nuclear Information System (INIS)

    Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

    2010-01-01

    A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Bubbles formation in helium ion irradiated Cu/W multilayer nanocomposites: Effects on structure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Callisti, M., E-mail: M.Callisti@soton.ac.uk [National Centre for Advanced Tribology at Southampton, Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Karlik, M. [Department of Materials, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Trojanova 13, 120 00 Prague 2 (Czech Republic); Polcar, T. [National Centre for Advanced Tribology at Southampton, Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16627 Prague 6 (Czech Republic)

    2016-05-15

    This study investigates the effects of He bubbles on structural and mechanical properties of sputter-deposited Cu/W multilayers. A multilayer with a periodicity of 10 nm was deposited and subjected to helium ion irradiation with two different fluences. He bubbles formed mostly in Cu layers and their distribution was affected by He concentration and radiation damage. According to SRIM calculations, in low He concentration regions bubbles formed mostly along interfaces, while more homogeneously distributed bubbles were found in Cu layers and along columnar grain boundaries in higher He concentration regions. We suggest that the capability of interfaces to annihilate point defects is weakened by the He bubbles shielding effect. Nanoindentation tests revealed a hardness decrease amounting to ∼0.5 and ∼1 GPa for low and high fluences, respectively. The observed softening effect is attributed to He storage-induced changes in residual stresses and columnar grain boundary/interfacial sliding facilitated by He bubbles. - Highlights: • Cu/W nanocomposites were subjected to He{sup +} irradiation with different fluences. • He bubbles formed more homogeneously in higher He concentration regions. • Decrease in mechanical properties was observed for higher He concentrations. • He bubbles formation facilitated interfacial and grain boundary sliding.

  8. A high-quality multilayer structure characterization method based on X-ray fluorescence and Monte Carlo simulation

    Energy Technology Data Exchange (ETDEWEB)

    Brunetti, Antonio; Golosio, Bruno [Universita degli Studi di Sassari, Dipartimento di Scienze Politiche, Scienze della Comunicazione e Ingegneria dell' Informazione, Sassari (Italy); Melis, Maria Grazia [Universita degli Studi di Sassari, Dipartimento di Storia, Scienze dell' Uomo e della Formazione, Sassari (Italy); Mura, Stefania [Universita degli Studi di Sassari, Dipartimento di Agraria e Nucleo di Ricerca sulla Desertificazione, Sassari (Italy)

    2014-11-08

    X-ray fluorescence (XRF) is a well known nondestructive technique. It is also applied to multilayer characterization, due to its possibility of estimating both composition and thickness of the layers. Several kinds of cultural heritage samples can be considered as a complex multilayer, such as paintings or decorated objects or some types of metallic samples. Furthermore, they often have rough surfaces and this makes a precise determination of the structure and composition harder. The standard quantitative XRF approach does not take into account this aspect. In this paper, we propose a novel approach based on a combined use of X-ray measurements performed with a polychromatic beam and Monte Carlo simulations. All the information contained in an X-ray spectrum is used. This approach allows obtaining a very good estimation of the sample contents both in terms of chemical elements and material thickness, and in this sense, represents an improvement of the possibility of XRF measurements. Some examples will be examined and discussed. (orig.)

  9. Structural and optical properties of Cu-doped ZnS nanoparticles formed in chitosan/sodium alginate multilayer films.

    Science.gov (United States)

    Wang, Liping; Sun, Yujie; Xie, Xiaodong

    2014-05-01

    Chitosan/alginate multilayers were fabricated using a spin-coating method, and ZnS:Cu nanoparticles were generated within the network of two natural polysaccharides, chitosan and sodium alginate. The synthesized nanoparticles were characterized using an X-ray diffractometer (XRD), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM). The results showed that cubic zinc blende-structured ZnS:Cu nanoparticles with an average crystal size of ~ 3 nm were uniformly distributed. UV-vis spectra indicate a large quantum size effect and the absorption edge for the ZnS:Cu nanoparticles slightly shifted to longer wavelengths with increasing Cu ion concentrations. The photoluminescence of the Cu-doped ZnS nanoparticles reached a maximum at a 1% doping level. The ZnS:Cu nanoparticles form and are distributed uniformly in the composite multilayer films with a surface average height of 25 nm. Copyright © 2013 John Wiley & Sons, Ltd.

  10. A high-quality multilayer structure characterization method based on X-ray fluorescence and Monte Carlo simulation

    International Nuclear Information System (INIS)

    Brunetti, Antonio; Golosio, Bruno; Melis, Maria Grazia; Mura, Stefania

    2015-01-01

    X-ray fluorescence (XRF) is a well known nondestructive technique. It is also applied to multilayer characterization, due to its possibility of estimating both composition and thickness of the layers. Several kinds of cultural heritage samples can be considered as a complex multilayer, such as paintings or decorated objects or some types of metallic samples. Furthermore, they often have rough surfaces and this makes a precise determination of the structure and composition harder. The standard quantitative XRF approach does not take into account this aspect. In this paper, we propose a novel approach based on a combined use of X-ray measurements performed with a polychromatic beam and Monte Carlo simulations. All the information contained in an X-ray spectrum is used. This approach allows obtaining a very good estimation of the sample contents both in terms of chemical elements and material thickness, and in this sense, represents an improvement of the possibility of XRF measurements. Some examples will be examined and discussed. (orig.)

  11. Hybrid structures based on gold nanoparticles and semiconductor quantum dots for biosensor applications

    Directory of Open Access Journals (Sweden)

    Kurochkina M

    2018-04-01

    Full Text Available Margarita Kurochkina,1 Elena Konshina,1 Aleksandr Oseev,2 Soeren Hirsch3 1Centre of Information Optical Technologies, ITMO University, Saint Petersburg, Russia; 2Institute of Micro and Sensor Systems, Otto-von-Guericke-University Magdeburg, Magdeburg, Germany; 3Department of Engineering, University of Applied Sciences Brandenburg, Brandenburg an der Havel, Germany Background: The luminescence amplification of semiconductor quantum dots (QD in the presence of self-assembled gold nanoparticles (Au NPs is one of way for creating biosensors with highly efficient transduction. Aims: The objective of this study was to fabricate the hybrid structures based on semiconductor CdSe/ZnS QDs and Au NP arrays and to use them as biosensors of protein. Methods: In this paper, the hybrid structures based on CdSe/ZnS QDs and Au NP arrays were fabricated using spin coating processes. Au NP arrays deposited on a glass wafer were investigated by optical microscopy and absorption spectroscopy depending on numbers of spin coating layers and their baking temperature. Bovine serum albumin (BSA was used as the target protein analyte in a phosphate buffer. A confocal laser scanning microscope was used to study the luminescent properties of Au NP/QD hybrid structures and to test BSA. Results: The dimensions of Au NP aggregates increased and the space between them decreased with increasing processing temperature. At the same time, a blue shift of the plasmon resonance peak in the absorption spectra of Au NP arrays was observed. The deposition of CdSe/ZnS QDs with a core diameter of 5 nm on the surface of the Au NP arrays caused an increase in absorption and a red shift of the plasmon peak in the spectra. The exciton–plasmon enhancement of the QDs’ photoluminescence intensity has been obtained at room temperature for hybrid structures with Au NPs array pretreated at temperatures of 100°C and 150°C. It has been found that an increase in the weight content of BSA

  12. Dilute Magnetic Semiconductor Cu2FeSnS4 Nanocrystals with a Novel Zincblende Structure

    Directory of Open Access Journals (Sweden)

    Xiaolu Liang

    2012-01-01

    Full Text Available Diluted magnetic semiconductor Cu2FeSnS4 nanocrystals with a novel zincblende structure have been successfully synthesized by a hot-injection approach. Cu+, Fe2+, and Sn4+ ions occupy the same position in the zincblende unit cell, and their occupancy possibilities are 1/2, 1/4, and 1/4, respectively. The nanocrystals were characterized by means of X-ray diffraction (XRD, transmission electron microscopy (TEM, selected area electron diffraction (SAED, energy-dispersive spectroscopy (EDS, and UV-vis-NIR absorption spectroscopy. The nanocrystals have an average size of 7.5 nm and a band gap of 1.1 eV and show a weak ferromagnetic behavior at low temperature.

  13. Coherent manipulation of spontaneous emission spectra in coupled semiconductor quantum well structures.

    Science.gov (United States)

    Chen, Aixi

    2014-11-03

    In triple coupled semiconductor quantum well structures (SQWs) interacting with a coherent driving filed, a coherent coupling field and a weak probe field, spontaneous emission spectra are investigated. Our studies show emission spectra can easily be manipulated through changing the intensity of the driving and coupling field, detuning of the driving field. Some interesting physical phenomena such as spectral-line enhancement/suppression, spectral-line narrowing and spontaneous emission quenching may be obtained in our system. The theoretical studies of spontaneous emission spectra in SQWS have potential application in high-precision spectroscopy. Our studies are based on the real physical system [Appl. Phys. Lett.86(20), 201112 (2005)], and this scheme might be realizable with presently available techniques.

  14. Theoretical studies of structural and electronic properties of overlayers on semiconductor surfaces

    International Nuclear Information System (INIS)

    Cakmak, M.

    1999-06-01

    In this thesis we report the results of ab initio density functional calculations of equilibrium atomic geometry, electronic states and chemical bonding for the adsorption of elemental S and H 2 S on chosen semiconductor surfaces. The results are in good agreement with the available experimental results and indicate the need for further experimental work. In Chapter 2 of this thesis, I describe the formalism of the ab initio pseudopotential theory and the computational procedures which are used in this thesis. In the following chapter, a few experimental techniques are discussed, which we subsequently use their results to compare with our theoretical calculated results. In Chapter 4 the passivation of S on InP(110) is investigated. Two sets of geometries are used; non-reacted geometries and reacted geometries. For non-reacted full-monolayer coverage, the epitaxially continued layer structure is found to be the most energetically favourable and it exhibits a good semiconducting nature. For an ordered reacted model with the adsorbate S atoms exchanged with their neighbouring P atoms, the average vertical distance between the top two layers is in agreement with x-ray standing wave analysis, but is characterized by a small band gap. In Chapter 5 adsorption of the H 2 S molecule on the InP(110), GaAs(110) and GaP(110) surfaces is investigated within a dissociative adsorption model. In general the adsorption of H 2 S on the three semiconductors shows similar behaviour. In Chapter 6 the adsorption of elemental S on Si(001) is investigated using three adsorption models; hemisulfide-(2 x 1) structure, monosulfide-(1 x 1) structure, and disulfide-(1 x 1) structure. An analysis of the surface free energy suggests that the monosulfide structure is more stable than the hemisulfide and disulfide structures. This result is also used to investigate the adsorption of elemental S on the Ge(001) surface. In Chapter 7, the adsorption of the H 2 S molecule on the Si(001) and Ge(001

  15. Probing the Unique Role of Gallium in Amorphous Oxide Semiconductors through Structure-Property Relationships

    Energy Technology Data Exchange (ETDEWEB)

    Moffitt, Stephanie L.; Zhu, Qimin; Ma, Qing; Falduto, Allison F.; Buchholz, D. Bruce; Chang, Robert P.H.; Mason, Thomas O.; Medvedeva, Julia E.; Marks, Tobin J.; Bedzyk, Michael J. (NWU); (MUST)

    2017-09-01

    This study explores the unique role of Ga in amorphous (a-) In[BOND]Ga[BOND]O oxide semiconductors through combined theory and experiment. It reveals substitutional effects that have not previously been attributed to Ga, and that are investigated by examining how Ga influences structure–property relationships in a series of pulsed laser deposited a-In[BOND]Ga[BOND]O thin films. Element-specific structural studies (X-ray absorption and anomalous scattering) show good agreement with the results of ab initio molecular dynamics simulations. This structural knowledge is used to understand the results of air-annealing and Hall effect electrical measurements. The crystallization temperature of a-IO is shown to increase by as much as 325 °C on substituting Ga for In. This increased thermal stability is understood on the basis of the large changes in local structure that Ga undergoes, as compared to In, during crystallization. Hall measurements reveal an initial sharp drop in both carrier concentration and mobility with increasing Ga incorporation, which moderates at >20 at% Ga content. This decline in both the carrier concentration and mobility with increasing Ga is attributed to dilution of the charge-carrying In[BOND]O matrix and to increased structural disorder. The latter effect saturates at high at% Ga.

  16. Crystal structure of the new diamond-like semiconductor CuMn2InSe4

    Indian Academy of Sciences (India)

    Abstract. The crystal structure of the semiconductor compound CuMn2InSe4 was analysed using X-ray powder ... properties arising from the presence of magnetic ions in the ... by SEM technique, using a Hitachi S2500 microscope equip-.

  17. Confine Clay in an Alternating Multilayered Structure through Injection Molding: A Simple and Efficient Route to Improve Barrier Performance of Polymeric Materials.

    Science.gov (United States)

    Yu, Feilong; Deng, Hua; Bai, Hongwei; Zhang, Qin; Wang, Ke; Chen, Feng; Fu, Qiang

    2015-05-20

    Various methods have been devoted to trigger the formation of multilayered structure for wide range of applications. These methods are often complicated with low production efficiency or require complex equipment. Herein, we demonstrate a simple and efficient method for the fabrication of polymeric sheets containing multilayered structure with enhanced barrier property through high speed thin-wall injection molding (HSIM). To achieve this, montmorillonite (MMT) is added into PE first, then blended with PP to fabricate PE-MMT/PP ternary composites. It is demonstrated that alternating multilayer structure could be obtained in the ternary composites because of low interfacial tension and good viscosity match between different polymer components. MMT is selectively dispersed in PE phase with partial exfoliated/partial intercalated microstructure. 2D-WAXD analysis indicates that the clay tactoids in PE-MMT/PP exhibits an uniplanar-axial orientation with their surface parallel to the molded part surface, while the tactoids in binary PE-MMT composites with the same overall MMT contents illustrate less orientation. The enhanced orientation of nanoclay in PE-MMT/PP could be attributed to the confinement of alternating multilayer structure, which prohibits the tumbling and rotation of nanoplatelets. Therefore, the oxygen barrier property of PE-MMT/PP is superior to that of PE-MMT because of increased gas permeation pathway. Comparing with the results obtained for PE based composites in literature, outstanding barrier property performance (45.7% and 58.2% improvement with 1.5 and 2.5 wt % MMT content, respectively) is achieved in current study. Two issues are considered responsible for such improvement: enhanced MMT orientation caused by the confinement in layered structure, and higher local density of MMT in layered structure induced denser assembly. Finally, enhancement in barrier property by confining impermeable filler into alternating multilayer structure through such

  18. Analysis and design of multilayer structures for neutron monochromators and supermirrors

    International Nuclear Information System (INIS)

    Masalovich, S.

    2013-01-01

    A relatively simple and accurate analytical model for studying the reflectivity of neutron multilayer monochromators and supermirrors is proposed. Design conditions that must be fulfilled in order to reach the maximum reflectivity are considered. The question of the narrowest bandwidth of a monochromator is discussed and the number of layers required to build such a monochromator is derived. Finally, we propose a new and efficient algorithm for synthesis of a supermirror with specified parameters and discuss some inherent restrictions on an attainable reflectivity. -- Highlights: • The inequality (not equation) that defines the thicknesses of layers was obtained. • Ready-to-use formula for the width of the spectral line was found. • Non-quarter-wave monochromators were suggested. • We propose a new algorithm for design of a neutron supermirror. • The problem of minimizing the number of layers in a supermirror is raised

  19. Ion beam analysis of multi-layered structure in Nb/Cu system

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Shunya; Goppelt-Langer, P; Naramoto, Hiroshi; Aoki, Yasushi; Takeshita, Hidefumi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    The dependence of H concentration on the layer thickness in H charged Nb/Cu multilayer samples has been studied using {sup 15}N resonance nuclear reaction analysis({sup 15}N-NRA) and high energy elastic recoil detection analysis(HE-ERDA). Also a simulation code has been developed for accurate simulation of the {sup 1}H({sup 15}N,{alpha}{gamma}){sup 12}C4.43 MeV {gamma}-yields at 6.385 MeV and 13.365 MeV reaction energy. The simulation are in good agreement with the experimental results. The present results show smooth increase of the H concentrations in Nb layers with increasing layer thickness. (author)

  20. Assessing the Impact of Canopy Structure Simplification in Common Multilayer Models on Irradiance Absorption Estimates of Measured and Virtually Created Fagus sylvatica (L. Stands

    Directory of Open Access Journals (Sweden)

    Pol Coppin

    2009-11-01

    Full Text Available Multilayer canopy representations are the most common structural stand representations due to their simplicity. Implementation of recent advances in technology has allowed scientists to simulate geometrically explicit forest canopies. The effect of simplified representations of tree architecture (i.e., multilayer representations of four Fagus sylvatica (L. stands, each with different LAI, on the light absorption estimates was assessed in comparison with explicit 3D geometrical stands. The absorbed photosynthetic radiation at stand level was calculated. Subsequently, each geometrically explicit 3D stand was compared with three multilayer models representing horizontal, uniform, and planophile leaf angle distributions. The 3D stands were created either by in situ measured trees or by modelled trees generated with the AMAP plant growth software. The Physically Based Ray Tracer (PBRT algorithm was used to simulate the irradiance absorbance of the detailed 3D architecture stands, while for the three multilayer representations, the probability of light interception was simulated by applying the Beer-Lambert’s law. The irradiance inside the canopies was characterized as direct, diffuse and scattered irradiance. The irradiance absorbance of the stands was computed during eight angular sun configurations ranging from 10° (near nadir up to 80° sun zenith angles. Furthermore, a leaf stratification (the number and angular distribution of leaves per LAI layer inside a canopy analysis between the 3D stands and the multilayer representations was performed, indicating the amount of irradiance each leaf is absorbing along with the percentage of sunny and shadow leaves inside the canopy. The results reveal that a multilayer representation of a stand, using a multilayer modelling approach, greatly overestimated the absorbed irradiance in an open canopy, while it provided a better approximation in the case of a closed canopy. Moreover, the actual stratification

  1. Quantitative depth profiling of near surface semiconductor structures using ultra low energy SIMS analysis

    International Nuclear Information System (INIS)

    Elliner, D.I.

    1999-09-01

    The continual reduction in size of semiconductor structures and depths of junctions is putting a greater strain on characterization techniques. Accurate device and process modelling requires quantified electrical and dopant profiles from the topmost few nanometres. Secondary ion mass spectrometry (SIMS) is an analytical technique commonly used in the semiconductor industry to measure concentration depth profiles. To allow the quantification of the features that are closer to the surface, lower energy ions are employed, which also improves the available depth resolution. The development of the floating ion gun (FLIG) has made it possible to use sub keV beam energies on a routine basis, allowing quantified dopant profiles to be obtained within the first few nanometres of the surface. This thesis demonstrates that, when profiling with oxygen ion beams, greatest certainty in the retained dose is achieved at normal incidence, and when analysing boron accurate profile shapes are only obtained when the primary beam energy is less than half that of the implant. It was shown that it is now possible to profile, though with slower erosion rates and a limited dynamic range, with 100 eV oxygen (0 2 + ) ion beams. Profile features that had developed during rapid thermal annealing, that could only be observed when ultra low energy ion beams were used, were investigated using various analytical techniques. Explanations of the apparently inactive dopant were proposed, and included suggestions for cluster molecules. The oxide thickness of fully formed altered layers has also been investigated. The results indicate that a fundamental change in the mechanism of oxide formation occurs, and interfaces that are sharper than those grown by thermal oxidation can be produced using sub-keV ion beams. (author)

  2. Effect of temperature and magnetic field on disorder in semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Agrinskaya, N. V., E-mail: nina.agrins@mail.ioffe.ru; Kozub, V. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-02-15

    We present the results of consistent theoretical analysis of various factors that may lead to influence of temperature and external magnetic field on disorder in semiconductor structures. Main attention is paid to quantum well (QW) structures in which only QWs or both QW and barriers are doped (the doping level is assumed to be close to the value corresponding to the metal–insulator transition). The above factors include (i) ionization of localized states to the region of delocalized states above the mobility edge, which is presumed to exist in the impurity band; (ii) the coexistence in the upper and lower Hubbard bands (upon doping of QWs as well as barriers); in this case, in particular, the external magnetic field determines the relative contribution of the upper Hubbard band due to spin correlations at doubly filled sites; and (iii) the contribution of the exchange interaction at pairs of sites, in which the external magnetic field can affect the relation between ferromagnetic and antiferromagnetic configurations. All these factors, which affect the structure and degree of disorder, lead to specific features in the temperature dependence of resistivity and determine specific features of the magnetoresistance. Our conclusions are compared with available experimental data.

  3. Synchrotron-based measurements of the electronic structure of the organic semiconductor copper phthalocyanine

    International Nuclear Information System (INIS)

    Downes, J.E.

    2004-01-01

    Full text: Copper phthalocyanine (CuPc) is a prototypical molecular organic semiconductor that is currently used in the construction of many organic electronic devices such as organic light emitting diodes (OLEDs). Although the material is currently being used, and despite many experimental and theoretical studies, it's detailed electronic structure is still not completely understood. This is likely due to two key factors. Firstly, the interaction of the Cu 3d and phthalocyanine ligand 2p electrons leads to the formation of a complex arrangement of localized and delocalized states near the Fermi level. Secondly, thin films of the material are subject to damage by the photon beam used to make measurements of their electronic structure. Using the synchrotron-based techniques of soft x-ray emission spectroscopy (XES) and x-ray photoemission spectroscopy (XPS), we have measured the detailed electronic structure of in-situ grown thin film samples of CuPc. Beam damage was minimized by continuous translation of the sample during data acquisition. The results obtained differ significantly from previous XES and ultraviolet photoemission measurements, but are in excellent agreement with recent density functional calculations. The reasons for these discrepancies will be explained, and their implications for future measurements on similar materials will be explored

  4. Loading Actinides in Multilayered Structures for Nuclear Waste Treatment: The First Case Study of Uranium Capture with Vanadium Carbide MXene.

    Science.gov (United States)

    Wang, Lin; Yuan, Liyong; Chen, Ke; Zhang, Yujuan; Deng, Qihuang; Du, Shiyu; Huang, Qing; Zheng, Lirong; Zhang, Jing; Chai, Zhifang; Barsoum, Michel W; Wang, Xiangke; Shi, Weiqun

    2016-06-29

    Efficient nuclear waste treatment and environmental management are important hurdles that need to be overcome if nuclear energy is to become more widely used. Herein, we demonstrate the first case of using two-dimensional (2D) multilayered V2CTx nanosheets prepared by HF etching of V2AlC to remove actinides from aqueous solutions. The V2CTx material is found to be a highly efficient uranium (U(VI)) sorbent, evidenced by a high uptake capacity of 174 mg g(-1), fast sorption kinetics, and desirable selectivity. Fitting of the sorption isotherm indicated that the sorption followed a heterogeneous adsorption model, most probably due to the presence of heterogeneous adsorption sites. Density functional theory calculations, in combination with X-ray absorption fine structure characterizations, suggest that the uranyl ions prefer to coordinate with hydroxyl groups bonded to the V-sites of the nanosheets via forming bidentate inner-sphere complexes.

  5. Impact of deposition rate on the structural and magnetic properties of sputtered Ni/Cu multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Karpuz, Ali [Karamanoglu Mehmetbey Univ., Karaman (Turkey). Dept. of Physics; Colmekci, Salih; Kockar, Hakan; Kuru, Hilal; Uckun, Mehmet [Balikesir Univ. (Turkey). Dept. of Physics

    2018-04-01

    The structural and corresponding magnetic properties of Ni/Cu films sputtered at low and high deposition rates were investigated as there is a limited number of related studies in this field. 5[Ni(10 nm)/Cu(30 nm)] multilayer thin films were deposited using two DC sputtering sources at low (0.02 nm/s) and high (0.10 nm/s) deposition rates of Ni layers. A face centered cubic phase was detected for both films. The surface of the film sputtered at the low deposition rate has a lot of micro-grains distributed uniformly and with sizes from 0.1 to 0.4 μm. Also, it has a vertical acicular morphology. At high deposition rate, the number of micro-grains considerably decreased, and some of their sizes increased up to 1 μm. The surface of the Ni/Cu multilayer deposited at the low rate has a relatively more grainy and rugged structure, whereas the surface of the film deposited at the high rate has a relatively larger lateral size of surface grains with a relatively fine morphology. Saturation magnetisation, M{sub s}, values were 90 and 138 emu/cm{sup 3} for deposition rates of 0.02 and 0.10 nm/s, respectively. Remanence, M{sub r}, values were also found to be 48 and 71 emu/cm{sup 3} for the low and high deposition rates, respectively. The coercivity, H{sub c}, values were 46 and 65 Oe for the low and high Ni deposition rates, respectively. The changes in the film surfaces provoked the changes in the H{sub c} values. The M{sub s}, M{sub r}, and H{sub c} values of the 5[Ni(10 nm)/Cu(30 nm)] films can be adjusted considering the surface morphologies and film contents caused by the different Ni deposition rates.

  6. Physics and technology development of multilayer EUV reflective optics

    NARCIS (Netherlands)

    Louis, Eric

    2012-01-01

    This thesis describes the development of molybdenum/silicon based multilayer reflective elements for the Extreme UV wavelength range, as motivated by their application in photolithography for semiconductor manufacturing. The thesis reflects the basic thin film physics, technological developments,

  7. Structural, optical and electrical properties of silicon nanocrystals embedded in SixC1−x/SiC multilayer systems for photovoltaic applications

    International Nuclear Information System (INIS)

    López-Vidrier, J.; Hernández, S.; Samà, J.; Canino, M.; Allegrezza, M.; Bellettato, M.; Shukla, R.; Schnabel, M.; Löper, P.; López-Conesa, L.; Estradé, S.; Peiró, F.; Janz, S.; Garrido, B.

    2013-01-01

    Highlights: ► We study the structural, optical and electrical properties of Si x C 1−x /SiC multilayers with different Si excess. ► Multilayer structure is destroyed after annealing at 1100 °C. ► Energy filtered TEM confirmed the Si NC formation. ► Sample thickness values from optical simulations are in agreement with TEM observations. ► The crystallization degree of the NCs was evaluated by Raman scattering and R and T techniques. ► The system conductivity depends on the NC size. ► The presence of a defective oxycarbide layer on top did not allow for obtaining useful electrical information. -- Abstract: In this work we present a structural, optical and electrical characterization of Si x C 1−x /SiC multilayer systems with different silicon content. After the deposition process, an annealing treatment was carried out in order to induce the silicon nanocrystals formation. By means of energy-filtered transmission electron microscopy (EFTEM) we observed the structural morphology of the multilayers and the presence of crystallized silicon nanoprecipitates for samples annealed up to 1100 °C. We discuss the suitability of optical techniques such as Raman scattering and reflectance and transmittance (R and T) for the evaluation of the crystalline fraction of our samples at different silicon excess ranges. In addition, the combination of R and T measurements with simulation has proved to be a useful instrument to confirm the structural properties observed by EFTEM. Finally, we explore the origin of the extremely high current density revealed by electrical measurements, probably due to the presence of an undesired defective SiC y O z ternary compound layer, already supported by the structural and optical results. Nevertheless, the variation of the electrical measurements with the silicon amount indicates a small but significant contribution from the multilayers

  8. Effect of dissipative processes on the dispersion and instability of drift waves in a fine-stratified semiconductor structure

    International Nuclear Information System (INIS)

    Bulgakov, A. A.; Shramkova, O. V.

    2006-01-01

    The damping of waves of the charge carrier density in a periodic semiconductor structure in an external electric field is investigated under the assumption that the period of the structure is much smaller than the electromagnetic radiation wavelength. The threshold conditions for the instability of carrier density waves propagating obliquely to the direction of the electric current are obtained. The existence of a resistive instability that can develop at drift velocities both higher and lower than the plasmon phase velocity is predicted

  9. Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy

    OpenAIRE

    Acbas, G.; Kim, M. -H.; Cukr, M.; Novak, V.; Scarpulla, M. A.; Dubon, O. D.; Jungwirth, T.; Sinova, Jairo; Cerne, J.

    2009-01-01

    We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. The infrared magneto-optical effects we study arise directly from the spin-splitting of the carrier ...

  10. Magnetic and structural studies on nanostructured Gd/Cr multilayer films

    International Nuclear Information System (INIS)

    Gadioli, G.Z.; Rouxinol, F.P.; Gelamo, R.V.; Cardoso, L.P.; Gama, S.; Bica de Moraes, M.A.

    2013-01-01

    Investigations of magnetic phases, transition temperatures and coercivity were performed in multilayered Gd/Cr films as a function of the crystalline state and morphology of the Gd layers. The films were deposited by dc magnetron sputtering at three substrate temperatures, T s , (room temperature, 300 and 500 °C). The Gd and Cr thicknesses were of 10 and 30 nm, respectively. Two series of three films were prepared. In one of the series, the films had a single Gd/Cr bilayer; in the other, 15 bilayers. The discontinuous or granular nature of the Gd layers was revealed by scanning electron microscopy Grazing incidence angle x-ray diffraction was used to investigate the crystalline state of the Gd and Cr layers. These techniques revealed that grain average size and crystalline order increase with increasing T s . From dc magnetic measurements, the co-existence of ferromagnetic and superferromagnetic phases in the Gd layers was observed, and Curie transition temperatures, T C , were determined. High coercive fields at low temperature (2 K) were measured in hysteresis cycles. Field-cooled and zero field-cooled magnetizations as functions of temperature curves exhibited, for some of the samples, a low temperature peak suggesting a freezing transition to a cluster glass state. This was confirmed by complementary ac-susceptibility measurements carried out as a function of temperature, for various frequencies of the ac field. Some results of this work – the decline in T C for decreasing Gd grain size, the high coercive field and its dependence on particle size, and the behavior of the magnetization at low temperatures for the sample deposited at room temperature – are discussed in terms of finite size and surface effects in nanosized particles. - Highlights: • Sputter-deposited Gd/Cr multilayer films with nanostructured Gd layers • Ferromagnetic and superferromagnetic phases are observed. • Ferromagnetic phase dependent of the deposition temperature • Improved

  11. Electronic properties of InAs-based metal-insulator-semiconductor structures

    CERN Document Server

    Kuryshev, G L; Valisheva, N A

    2001-01-01

    The peculiarities of electronic processes in InAs-based MIS structures operating in the charge injection device mode and using as photodetectors in spectral range 2.5-3.05 mu m are investigated. A two-layer system consisting of anodic oxide and low-temperature silicon dioxide is used as an insulator. It is shown that fluoride-containing components that is introduced into the electrolyte decreases the value of the built-in charge and the surface state static density down to minimal measurable values <= 2 x 10 sup 1 sup 0 cm sup - sup 2 eV sup - sup 2. Physical and chemical characteristics of the surface states at the InAs-dielectric interface are discussed on the basis of data on phase composition of anodic oxides obtained by means of X-ray photoelectronic spectroscopy. Anomalous field generation was also observed under the semiconductor non-equilibrium depletion. The processes of tunnel generation and the noise behavior of MIS structures under non-equilibrium depletion are investigated

  12. Study of SiO2-Si and metal-oxide-semiconductor structures using positrons

    Science.gov (United States)

    Leung, T. C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.

    1993-01-01

    Studies of SiO2-Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape S data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO2-Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of γ-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown.

  13. Study of SiO2-Si and metal-oxide-semiconductor structures using positrons

    International Nuclear Information System (INIS)

    Leung, T.C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K.G.

    1993-01-01

    Studies of SiO 2 -Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape S data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO 2 -Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of γ-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown

  14. Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

    Science.gov (United States)

    Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.

    2015-03-01

    Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biological functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.

  15. Structural and electrical characterisation of semiconductor materials using a nuclear microprobe

    International Nuclear Information System (INIS)

    Jamieson, D.N.

    1998-01-01

    The domain of high-resolution imaging techniques (sub-micron) traditionally belongs to low-energy ion beams (ke V ion microprobe), electrons (transmission or scanning electron microscopy), light (near field microscopy), or all variants of scanning probe microscopies. Now, nuclear techniques of analysis, with a nuclear microprobe, have entered this domain, bringing a range of unique techniques for making images. In addition to-conventional techniques like Rutherford (and non-Rutherford) backscattering spectrometry and particle induced x-ray emission for structural characterisation, new ion beam analysis techniques have been developed for electrical characterisation as well. Foremost of these new techniques is ion beam induced charge (IBIC) which has seen an explosion of applications in the last five years to the study of charge transport properties of a variety of materials including polycrystalline diamond and silicon. An additional novel technique is ionoluminescence, which may be used to image various electronic properties of the material. Presented here are some examples of these imaging techniques in a variety of semiconductor materials. In all these examples, the specimens display structural inhomogeneities on the scale of 10 micrometres, making it essential to employ a focused beam. (author)

  16. Structural and electrical characterisation of semiconductor materials using a nuclear microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics, Microanalytical Centre

    1998-06-01

    The domain of high-resolution imaging techniques (sub-micron) traditionally belongs to low-energy ion beams (ke V ion microprobe), electrons (transmission or scanning electron microscopy), light (near field microscopy), or all variants of scanning probe microscopies. Now, nuclear techniques of analysis, with a nuclear microprobe, have entered this domain, bringing a range of unique techniques for making images. In addition to-conventional techniques like Rutherford (and non-Rutherford) backscattering spectrometry and particle induced x-ray emission for structural characterisation, new ion beam analysis techniques have been developed for electrical characterisation as well. Foremost of these new techniques is ion beam induced charge (IBIC) which has seen an explosion of applications in the last five years to the study of charge transport properties of a variety of materials including polycrystalline diamond and silicon. An additional novel technique is ionoluminescence, which may be used to image various electronic properties of the material. Presented here are some examples of these imaging techniques in a variety of semiconductor materials. In all these examples, the specimens display structural inhomogeneities on the scale of 10 micrometres, making it essential to employ a focused beam. (author). Extended abstract. 18 refs. 4 figs.

  17. Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

    International Nuclear Information System (INIS)

    Glas, F; Patriarche, G; Harmand, J C

    2010-01-01

    We review and illustrate the impact of TEM on the study of nanowires of non-nitride III-V semiconductors, with particular emphasis on the understanding of the thermodynamics and kinetics of their formation assisted by nano-sized catalyst particles. Besides providing basic information about the morphology of the nanowires and their growth rate as a function of diameter, TEM offers insights into the peculiar crystalline structure that they adopt. We discuss the formation of the unusual wurtzite hexagonal crystalline phase and that of planar stacking defects in these nanowires and show that they are kinetically controlled. We also demonstrate the transformation of wurtzite into cubic sphalerite upon epitaxial burying of the nanowires. Nanowires are particularly interesting in that they allow the fabrication of precisely positioned quantum dots with well-defined geometries. In this respect, we discuss the formation of strained quantum-size inclusions in nanowires, their critical dimensions and the kinetic and thermodynamic factors governing the changes of the crystalline structure that sometimes occur around a hetero-interface.

  18. Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

    Directory of Open Access Journals (Sweden)

    Šarūnas MEŠKINIS

    2013-03-01

    Full Text Available In present study five synthesized organic semiconductor compounds have been used for fabrication of the planar metal / organic semiconductor / metal structures. Both top electrode and bottom electrode configurations were used. Current-voltage (I-V characteristics of the samples were investigated. Effect of the hysteresis of the I-V characteristics was observed for all the investigated samples. However, strength of the hysteresis was dependent on the organic semiconductor used. Study of I-V characteristics of the top contact Al/AT-RB-1/Al structures revealed, that in (0 – 500 V voltages range average current of the samples measured in air is only slightly higher than current measured in nitrogen ambient. Deposition of the ultra-thin diamond like carbon interlayer resulted in both decrease of the hysteresis of I-V characteristics of top contact Al/AT-RB-1/Al samples. However, decreased current and decreased slope of the I-V characteristics of the samples with diamond like carbon interlayer was observed as well. I-V characteristic hysteresis effect was less pronounced in the case of the bottom contact metal/organic semiconductor/metal samples. I-V characteristics of the bottom contact samples were dependent on electrode metal used.DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3816

  19. Heat transfer performance of multi-layer insulation structure under roof-slab of pool-type LMFBR

    International Nuclear Information System (INIS)

    Kinoshita, I.; Yoshida, K.; Uotani, M.; Fukada, T.

    1988-01-01

    At the normal operation of the pool-type LMFBR, the free surface of liquid sodium at about 500 0 C is present below the roof-slab, separated by a space of the argon cover gas. The temperature of the roof-slab has to be maintained low and uniform in the horizontal direction for sufficient strength of the structure. Therefore, thermal insulation structures must be installed on the lower surface of the roof-slab. In addition to the installation of thermal insulator, forced cooling of the roof-slab is required for assured structural integrity of the roof-slab. The capacity of cooling equipment can be reduced by installation of structures with high thermal insulating performance. The objective of this study is to evaluate the thermal insulation characteristics of multi-layer type insulator installed below the roof-slab by analytically and experimentally. The analytical study is intended to evaluate the effect of number, distance and emissivity of layers on the heat transfer performances. This is treated as the one-dimensional heat transfer with natural convection, conduction and thermal radiation. In the experiments, we have evaluated effects of gap distances between adjacent thermal insulators placed below the roof-slab on the thermal insulation performances

  20. The shielding performance of multilayer composite shielding structures to 14.8 MeV fast neutrons

    International Nuclear Information System (INIS)

    Shen Zhiqiang; Kang Qing; Xu Jun; Wang Zhenggang; Lu Nan

    2014-01-01

    Cement-based round thin-layer samples mixed with 30% quality content of barite, and 20% quality content of carbide boron has Prepared, the same-diameter sliced samples of pure graphite and pure polyethylene has cut, then, samples combination and cross stack order has designed, formed four species Multilayer Composite shield structure, at last, neutron attenuation measurements has been done by experimental system of using 14.8 MeV neutrons from the 5SDH-2 accelerator and long counter composition, penetrating rate of samples and the shield structure to 14.8 MeV fast neutron has tested, and attenuation section has calculated. Results show that 14.8 MeV fast neutrons to higher penetration rates of thin layer samples, attenuation cross section of samples distinguish small between each other, must be increasing the thickness of the samples to reduce the experimental uncertainty; through composed of attenuation cross section and thickness parameters of composite structure, can more accurately predict the shielding ability of composite structures, error between calculation results and experimental results in 4%. (authors)

  1. Infrared studies of impurity states and ultrafast carrier dynamics in semiconductor quantum structures

    Energy Technology Data Exchange (ETDEWEB)

    Stehr, D.

    2007-12-28

    This thesis deals with infrared studies of impurity states, ultrafast carrier dynamics as well as coherent intersubband polarizations in semiconductor quantum structures such as quantum wells and superlattices, based on the GaAs/AlGaAs material system. In the first part it is shown that the 2p{sub z} confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. These results also require reinterpretation of previous experimental data. The relaxation dynamics of interminiband transitions in doped GaAs/AlGaAs superlattices in the mid-IR are studied. This involves single-color pump-probe measurements to explore the dynamics at different wavelengths, which is performed with the Rossendorf freeelectron laser (FEL), providing picosecond pulses in a range from 3-200 {mu}m and are used for the first time within this thesis. In these experiments, a fast bleaching of the interminiband transition is observed followed by thermalization and subsequent relaxation, whose time constants are determined to be 1-2 picoseconds. This is followed by an additional component due to carrier cooling in the lower miniband. In the second part, two-color pump-probe measurements are performed, involving the FEL as the pump source and a table-top broad-band tunable THz source for probing the transmission changes. In addition, the dynamics of excited electrons within the minibands is explored and their contribution quantitatively extracted from the measurements. Intersubband absorption experiments of photoexcited carriers in single quantum well structures, measured directly in the time-domain, i.e. probing coherently the polarization between the first and the second subband, are presented. By varying the carrier

  2. A simple method for fabricating multi-layer PDMS structures for 3D microfluidic chips

    KAUST Repository

    Zhang, Mengying

    2010-01-01

    We report a simple methodology to fabricate PDMS multi-layer microfluidic chips. A PDMS slab was surface-treated by trichloro (1H,1H,2H,2H-perfluorooctyl) silane, and acts as a reusable transferring layer. Uniformity of the thickness of the patterned PDMS layer and the well-alignment could be achieved due to the transparency and proper flexibility of this transferring layer. Surface treatment results are confirmed by XPS and contact angle testing, while bonding forces between different layers were measured for better understanding of the transferring process. We have also designed and fabricated a few simple types of 3D PDMS chip, especially one consisting of 6 thin layers (each with thickness of 50 μm), to demonstrate the potential utilization of this technique. 3D fluorescence images were taken by a confocal microscope to illustrate the spatial characters of essential parts. This fabrication method is confirmed to be fast, simple, repeatable, low cost and possible to be mechanized for mass production. © The Royal Society of Chemistry 2010.

  3. Nanocrystalline TiO{sub 2} photocatalytic membranes with a hierarchical mesoporous multilayer structure: synthesis, characterization, and multifunction

    Energy Technology Data Exchange (ETDEWEB)

    Choi, H.; Dionysiou, D.D. [Department of Civil and Environmental Engineering, University of Cincinnati, Cincinnati, OH 45221-0071 (United States); Sofranko, A.C. [Department of Chemical Engineering, University of Virginia, Charlottesville, VA 22904-4741 (United States)

    2006-05-19

    A novel sol-gel dip-coating process to fabricate nanocrystalline TiO{sub 2} photocatalytic membranes with a robust hierarchical mesoporous multilayer and improved performance has been studied. Various titania sols containing poly(oxyethylenesorbitan monooleate) (Tween 80) surfactant as a pore-directing agent to tailor-design the porous structure of TiO{sub 2} materials at different molar ratios of Tween 80/isopropyl alcohol/acetic acid/titanium tetraisopropoxide = R:45:6:1 have been synthesized. The sols are dip-coated on top of a homemade porous alumina substrate to fabricate TiO{sub 2}/Al{sub 2}O{sub 3} composite membranes, dried, and calcined, and this procedure is repeated with varying sols in succession. The resulting asymmetric mesoporous TiO{sub 2} membrane with a thickness of 0.9 {mu}m exhibits a hierarchical change in pore diameter from 2-6, through 3-8, to 5-11 nm from the top to the bottom layer. Moreover, the corresponding porosity is incremented from 46.2, through 56.7, to 69.3 %. Compared to a repeated-coating process using a single sol, the hierarchical multilayer process improves water permeability significantly without sacrificing the organic retention and photocatalytic activity of the TiO{sub 2} membranes. The prepared TiO{sub 2} photocatalytic membrane has great potential in developing highly efficient water treatment and reuse systems, for example, decomposition of organic pollutants, inactivation of pathogenic microorganisms, physical separation of contaminants, and self-antifouling action because of its multifunctional capability. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  4. Assembly, Structure, and Functionality of Metal-Organic Networks and Organic Semiconductor Layers at Surfaces

    Science.gov (United States)

    Tempas, Christopher D.

    Self-assembled nanostructures at surfaces show promise for the development of next generation technologies including organic electronic devices and heterogeneous catalysis. In many cases, the functionality of these nanostructures is not well understood. This thesis presents strategies for the structural design of new on-surface metal-organic networks and probes their chemical reactivity. It is shown that creating uniform metal sites greatly increases selectivity when compared to ligand-free metal islands. When O2 reacts with single-site vanadium centers, in redox-active self-assembled coordination networks on the Au(100) surface, it forms one product. When O2 reacts with vanadium metal islands on the same surface, multiple products are formed. Other metal-organic networks described in this thesis include a mixed valence network containing Pt0 and PtII and a network where two Fe centers reside in close proximity. This structure is stable to temperatures >450 °C. These new on-surface assemblies may offer the ability to perform reactions of increasing complexity as future heterogeneous catalysts. The functionalization of organic semiconductor molecules is also shown. When a few molecular layers are grown on the surface, it is seen that the addition of functional groups changes both the film's structure and charge transport properties. This is due to changes in both first layer packing structure and the pi-electron distribution in the functionalized molecules compared to the original molecule. The systems described in this thesis were studied using high-resolution scanning tunneling microscopy, non-contact atomic force microscopy, and X-ray photoelectron spectroscopy. Overall, this work provides strategies for the creation of new, well-defined on-surface nanostructures and adds additional chemical insight into their properties.

  5. Electron-hole liquid in semiconductors and low-dimensional structures

    Science.gov (United States)

    Sibeldin, N. N.

    2017-11-01

    The condensation of excitons into an electron-hole liquid (EHL) and the main EHL properties in bulk semiconductors and low-dimensional structures are considered. The EHL properties in bulk materials are discussed primarily in qualitative terms based on the experimental results obtained for germanium and silicon. Some of the experiments in which the main EHL thermodynamic parameters (density and binding energy) have been obtained are described and the basic factors that determine these parameters are considered. Topics covered include the effect of external perturbations (uniaxial strain and magnetic field) on EHL stability; phase diagrams for a nonequilibrium exciton-gas-EHL system; information on the size and concentration of electron-hole drops (EHDs) under various experimental conditions; the kinetics of exciton condensation and of recombination in the exciton-gas-EHD system; dynamic EHD properties and the motion of EHDs under the action of external forces; the properties of giant EHDs that form in potential wells produced by applying an inhomogeneous strain to the crystal; and effects associated with the drag of EHDs by nonequilibrium phonons (phonon wind), including the dynamics and formation of an anisotropic spatial structure of the EHD cloud. In discussing EHLs in low-dimensional structures, a number of studies are reviewed on the observation and experimental investigation of phenomena such as spatially indirect (dipolar) electron-hole and exciton (dielectric) liquids in GaAs/AlGaAs structures with double quantum wells (QWs), EHDs containing only a few electron-hole pairs (dropletons), EHLs in type-I silicon QWs, and spatially direct and dipolar EHLs in type-II silicon-germanium heterostructures.

  6. Empirical tight-binding modeling of ordered and disordered semiconductor structures

    International Nuclear Information System (INIS)

    Mourad, Daniel

    2010-01-01

    In this thesis, we investigate the electronic and optical properties of pure as well as of substitutionally alloyed II-VI and III-V bulk semiconductors and corresponding semiconductor quantum dots by means of an empirical tight-binding (TB) model. In the case of the alloyed systems of the type A x B 1-x , where A and B are the pure compound semiconductor materials, we study the influence of the disorder by means of several extensions of the TB model with different levels of sophistication. Our methods range from rather simple mean-field approaches (virtual crystal approximation, VCA) over a dynamical mean-field approach (coherent potential approximation, CPA) up to calculations where substitutional disorder is incorporated on a finite ensemble of microscopically distinct configurations. In the first part of this thesis, we cover the necessary fundamentals in order to properly introduce the TB model of our choice, the effective bond-orbital model (EBOM). In this model, one s- and three p-orbitals per spin direction are localized on the sites of the underlying Bravais lattice. The matrix elements between these orbitals are treated as free parameters in order to reproduce the properties of one conduction and three valence bands per spin direction and can then be used in supercell calculations in order to model mixed bulk materials or pure as well as mixed quantum dots. Part II of this thesis deals with unalloyed systems. Here, we use the EBOM in combination with configuration interaction calculations for the investigation of the electronic and optical properties of truncated pyramidal GaN quantum dots embedded in AlN with an underlying zincblende structure. Furthermore, we develop a parametrization of the EBOM for materials with a wurtzite structure, which allows for a fit of one conduction and three valence bands per spin direction throughout the whole Brillouin zone of the hexagonal system. In Part III, we focus on the influence of alloying on the electronic and

  7. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    Science.gov (United States)

    Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

    2014-05-20

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  8. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available In this work, zinc oxide (ZnO multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV–Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications. Keywords: Multilayer films, Semiconductor, ZnO, XRD, SEM, Optoelectronic properties

  9. Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications

    Energy Technology Data Exchange (ETDEWEB)

    Němec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Charrier, J. [FOTON, UMR CNRS 6082, Enssat, 6 rue de Kerampont, BP 80518, 22305 Lannion (France); Cathelinaud, M. [Missions des Ressources et Compétences Technologiques, UPS CNRS 2274, 92195 Meudon (France); Allix, M. [CEMHTI-CNRS, Site Haute Température, Orléans (France); Adam, J.-L.; Zhang, S. [Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France)

    2013-07-31

    Amorphous chalcogenide and alumino-silicate thin films were fabricated by the pulsed laser deposition technique. Prepared films were characterized in terms of their morphology, chemical composition, and optical properties. Multilayered thin film stacks for reflectors and vertical microcavities were designed for telecommunication wavelength and the window of atmosphere transparency (band II) at 1.54 μm and 4.65 μm, respectively. Bearing in mind the benefit coming from the opportunity of an efficient wavelength tuning or, conversely, to stabilize the photoinduced effects in chalcogenide films as well as to improve their mechanical properties and/or their chemical durability, several pairs of materials from pure chalcogenide layers to chalcogenide/oxide layers were investigated. Different layer stacks were fabricated in order to check the compatibility between dissimilar materials which can have a strong influence on the interface roughness, adhesion, density, and homogeneity, for instance. Three different reflector designs were formulated and tested including all-chalcogenide layers (As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70}) and mixed chalcogenide-oxide layers (As{sub 40}Se{sub 60}/alumino-silicate and Ga{sub 10}Ge{sub 15}Te{sub 75}/alumino-silicate). Prepared multilayers showed good compatibility between different material pairs deposited by laser ablation despite the diversity of chemical compositions. As{sub 40}Se{sub 60}/alumino-silicate reflector showed the best parameters; its stop band (R > 97% at 8° off-normal incidence) has a bandwidth of ∼ 100 nm and it is centered at 1490 nm. The quality of the different mirrors developed was good enough to try to obtain a microcavity structure for the 1.5 μm telecommunication wavelength made of chalcogenide layers. The microcavity structure consists of Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} (doped with 5000 ppm of Er{sup 3+}) spacer surrounded by two 10-layer As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70

  10. Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO{sub x}/insulator structures from the results of synchrotron investigations

    Energy Technology Data Exchange (ETDEWEB)

    Turishchev, S. Yu., E-mail: tsu@phys.vsu.ru; Terekhov, V. A.; Koyuda, D. A. [Voronezh State University (Russian Federation); Ershov, A. V.; Mashin, A. I. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Parinova, E. V.; Nesterov, D. N. [Voronezh State University (Russian Federation); Grachev, D. A.; Karabanova, I. A. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Domashevskaya, E. P. [Voronezh State University (Russian Federation)

    2017-03-15

    The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic a-SiO{sub x}/SiO{sub 2}, a-SiO{sub x}/Al{sub 2}O{sub 3}, and a-SiO{sub x}/ZrO{sub 2} compounds. Using synchrotron radiation and the X-ray absorption near edge structure (XANES) spectroscopy technique, a modification is revealed for the investigated structures under the effect of high-temperature annealing at the highest temperature of 1100°C; this modification is attributed to the formation of silicon nanocrystals in the layers of photoluminescent multilayer structures.

  11. Study and Optimization of Self-Assembled Polymeric Multilayer Structures with Neutral Red for pH Sensing Applications

    Directory of Open Access Journals (Sweden)

    Javier Goicoechea

    2008-01-01

    Full Text Available The characterization of nanostructured thin films is critical in the design and fabrication of optical sensors. Particularly, this work is a detailed study of the properties of layer-by-layer electrostatic self-assembled multilayer (LbL structures fabricated using poly(allylamine hydrochloride (PAH and Neutral Red (NR as cations, and poly(acrylic acid (PAA as polyanion. These LbL films, due to the colorimetric properties of the NR, are suitable for sensor applications such as pH sensing in the physiological range. In the (PAH+NR/PAA LbL structure, it has been observed a very important influence of the pH of the solutions in the properties of the resultant films. Different techniques such as spectroscopy and atomic force microscopy (AFM are combined to characterize the films, and the results are analyzed showing coherence with previous works. The LbL structure is finally optimized and dramatically improved nanostructured films were fabricated, showing good sensing properties, short response times, and good stability.

  12. Colloidal nanocrystals in epitactical semiconductor structures; Kolloidale Nanokristalle in epitaktischen Halbleiterstrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Arens, C.

    2007-10-15

    in this thesis for the first time a new method for the fabrication of semiconductor quantum-dot structures was successfully applied. thereby colloidal CdSe nanocrystals have been imbedded by means of molecular-beam epitaxy into an epitactical ZnSe crystal matrix. The properties of the epitactically overgrown nanocrystals are elaborated in this thesis. The distribution of the nanocrystals on ZnSe surfaces dependes on the stressed state of the ZnSe layer. Nanocrystals on stressed ZnSe grow in agglomerates on its surface. Individual nanocrystals however can only be deposited on relaxed ZnSe. In-situ studies by means of reflection of high-energetically diffracted electrons show in both cases that under stoichiometrical conditions the ZnSe covering layer grows two-dimensionally. It is epitactic what is proved by means of highly resolving X-ray diffraction and transmission electron microscopy. The nanocrystals are after the overgrowth with ZnSe optically activ.

  13. Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell

    International Nuclear Information System (INIS)

    Marti, A.; Lopez, N.; Antolin, E.; Canovas, E.; Stanley, C.; Farmer, C.; Cuadra, L.; Luque, A.

    2006-01-01

    The Quantum Dot Intermediate Band Solar Cell (QD-IBSC) has been proposed for studying experimentally the operating principles of a generic class of photovoltaic devices, the intermediate band solar cells (IBSC). The performance of an IBSC is based on the properties of a semiconductor-like material which is characterised by the existence of an intermediate band (IB) located within what would otherwise be its conventional bandgap. The improvement in efficiency of the cell arises from its potential (i) to absorb below bandgap energy photons and thus produce additional photocurrent, and (ii) to inject this enhanced photocurrent without degrading its output photo-voltage. The implementation of the IBSC using quantum dots (QDs) takes advantage of the discrete nature of the carrier density of states in a 0-dimensional nano-structure, an essential property for realising the IB concept. In the QD-IBSC, the IB arises from the confined electron states in an array of quantum dots. This paper reviews the operation of the first prototype QD-IBSCs and discusses some of the lessons learnt from their characterisation

  14. Infrared detectors and emitters on the basis of semiconductor quantum structures

    International Nuclear Information System (INIS)

    Kruck, P. R.

    1997-08-01

    Intersubband transitions in Si/SiGe and GaAs/AlGaAs semiconductor quantum structures have been investigated with respect to possible application as infrared detectors and emitters. Investigation of the polarization dependence of subband absorption in Si/SiGe quantum wells shows both transverse magnetic and transverse electric polarized excitations. Intersubband transitions to several excited states are identified by comparison with self-consistent Luttinger-Kohn type calculations. On the basis of these investigations a quantum well infrared photodetector operating between 3 and 8 μm with a detectivity as high as D*=2 x 10 10 cm Hz 1/2 W -1 under normal incidence illumination and at an operating temperature of T=77K is realized. The polarization dependence of the photoconductivity shows the importance of both the absorption and the vertical transport properties of the photoexcited carriers for the detection mechanism. On the basis of the GaAs/AlGaAs material system a unipolar quantum cascade light emitting diode (LED) has been realized. The LED operates at a wavelength of 6.9 μm. A detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm 2 the optical output power lies in the ten nanowatt range. (author)

  15. Self-consistent electronic structure of spin-polarized dilute magnetic semiconductor quantum wells

    International Nuclear Information System (INIS)

    Hong, S. P.; Yi, K. S.; Quinn, J. J.

    2000-01-01

    The electronic properties of spin-symmetry-broken dilute magnetic semiconductor quantum wells are investigated self-consistently at zero temperature. The spin-split subband structure and carrier concentration of modulation-doped quantum wells are examined in the presence of a strong magnetic field. The effects of exchange and correlations of electrons are included in a local-spin-density-functional approximation. We demonstrate that exchange correlation of electrons decreases the spin-split subband energy but enhances the carrier density in a spin-polarized quantum well. We also observe that as the magnetic field increases, the concentration of spin-down (majority) electrons increases but that of spin-up (minority) electrons decreases. The effect of orbital quantization on the in-plane motion of electrons is also examined and shows a sawtoothlike variation in subband electron concentrations as the magnetic-field intensity increases. The latter variation is attributed to the presence of ionized donors acting as the electron reservoir, which is partially responsible for the formation of the integer quantum Hall plateaus. (c) 2000 The American Physical Society

  16. Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Marti, A. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain)]. E-mail: amarti@etsit.upm.es; Lopez, N. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Antolin, E. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Canovas, E. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Stanley, C. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Farmer, C. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Cuadra, L. [Departamento de Teoria de la Senal y Comunicaciones- Escuela Politecnica Superior, Universidad de Alcala, Ctra. Madrid-Barcelona, km. 33600, 28805-Alcala de Henares (Madrid) (Spain); Luque, A. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain)

    2006-07-26

    The Quantum Dot Intermediate Band Solar Cell (QD-IBSC) has been proposed for studying experimentally the operating principles of a generic class of photovoltaic devices, the intermediate band solar cells (IBSC). The performance of an IBSC is based on the properties of a semiconductor-like material which is characterised by the existence of an intermediate band (IB) located within what would otherwise be its conventional bandgap. The improvement in efficiency of the cell arises from its potential (i) to absorb below bandgap energy photons and thus produce additional photocurrent, and (ii) to inject this enhanced photocurrent without degrading its output photo-voltage. The implementation of the IBSC using quantum dots (QDs) takes advantage of the discrete nature of the carrier density of states in a 0-dimensional nano-structure, an essential property for realising the IB concept. In the QD-IBSC, the IB arises from the confined electron states in an array of quantum dots. This paper reviews the operation of the first prototype QD-IBSCs and discusses some of the lessons learnt from their characterisation.

  17. Effective carrier sweepout in a silicon waveguide by a metal-semiconductor-metal structure

    DEFF Research Database (Denmark)

    Ding, Yunhong; Hu, Hao; Ou, Haiyan

    2015-01-01

    We demonstrate effective carrier depletion by metal-semiconductor-metal junctions for a silicon waveguide. Photo-generated carriers are efficiently swept out by applying bias voltages, and a shortest carrier lifetime of only 55 ps is demonstrated.......We demonstrate effective carrier depletion by metal-semiconductor-metal junctions for a silicon waveguide. Photo-generated carriers are efficiently swept out by applying bias voltages, and a shortest carrier lifetime of only 55 ps is demonstrated....

  18. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    Science.gov (United States)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  19. Stranski–Krastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures

    International Nuclear Information System (INIS)

    Krost, A; Berger, C; Moser, P; Bläsing, J; Dadgar, A; Hums, C; Hempel, T; Bastek, B; Veit, P; Christen, J

    2011-01-01

    Low-strained AlInN/GaN multilayers aimed as Bragg mirrors were grown by metal organic vapour phase epitaxy on GaN/Si(1 1 1). In such structures the upper AlInN/GaN interfaces show a considerable roughening on a nanometre scale whereas the lower ones appear flat as evaluated by cross-sectional electron and transmission electron microscopy. The roughening is attributed to a Stranski–Krastanov transition from two-dimensional layer-by-layer to three-dimensional island growth. In addition, a self-organized wavy-like surface morphology on a micrometre scale is observed in such structures which we discuss in terms of Grinfeld instability

  20. ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures

    Directory of Open Access Journals (Sweden)

    Struk Przemysław

    2014-08-01

    Full Text Available The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a~ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a~ 3 dB/cm (TE0 and TM0 modes. The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.

  1. Optical studies of wide bandgap semiconductor epilayers and quantum well structures

    International Nuclear Information System (INIS)

    May, L.

    1998-09-01

    This thesis contains research on the optical properties of wide bandgap semiconductors, which are potentially useful for blue and UV emitters. The research covers materials from both the II-VI and III-V groups. In Chapter 1, a general introduction to the topic of blue and UV emitters is presented. The properties required of materials used for these applications are outlined, and the technological significance of these devices is discussed, in order to place this work into context. In Chapter 2, the main experimental techniques used in this work are outlined. These are photoluminescence spectroscopy (PL), photoluminescence excitation spectroscopy (PLE) and white light reflectivity. Chapter 3 begins with a discussion of the properties of ZnS. Then, following a brief outline of the sample growth technique, the optical studies of a series of ZnS single epitaxial layers are presented. The samples were characterised by photoluminescence spectroscopy, and the effect of strain on their properties studied in some detail. The results of tellurium and nitrogen doping studies are also presented. The chapter concludes with a study of ZnCdS epilayers. Chapter 4 begins with the growth and PL characterisation of a series of ZnS/ZnCdS multiple quantum well structures. Optically pumped stimulated emission experiments were then carried out on selected MQW samples. The results of these experiments are presented in the latter part of Chapter 4, followed by a discussion of the lasing mechanisms in II-VI quantum well structures. In Chapter 5, the growth and characterisation of a series of GaN epilayers are described. After an introduction outlining some of the key properties of GaN, the MOCVD growth procedure is described. Studies of the samples by PL, PLE and reflectivity are then presented. Finally, a study of p-type GaN epilayers is presented, and excimer laser annealing is investigated as a possible means of activating the dopant

  2. Residual stress analysis of a multi-layer thin film structure by destructive (curvature) and non-destructive (x-ray) methods

    International Nuclear Information System (INIS)

    Chen, P.C.; Oshida, Y.

    1989-01-01

    Multi-layer thin film which has structure of Cu/Cr/K/Cr/Cu prepared by sputtering process was analyzed for interfacial stresses for as-deposited conditions. This structure was also annealed at 150 degrees C, and 350 degrees C for around 15 min. in a vacuum and cooled slowly down for stress analyses. Equations for residual stress estimations for homogeneous material system using layer removal technique (stress relief) is now applied for inhomogeneous system (multi-layer structure). The results are compared with the data obtained from x-ray diffraction technique by using sin 2 Ψ - 2 θ method, for Cu layer. From the present analyses, the data obtained using layer removal seem to be qualitatively consistent with but not quantitatively in agreement with x-ray method

  3. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: electronic structure calculations

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Kudrnovský, Josef; Máca, František; Sinova, J.; MacDonald, A. H.; Champion, R.P.; Gallagher, B. L.; Jungwirth, Tomáš

    2007-01-01

    Roč. 75, č. 4 (2007), 045202/1-045202/6 ISSN 1098-0121 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/0583 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * electronic structure calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.172, year: 2007

  4. Transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure

    International Nuclear Information System (INIS)

    Wang Zhigang; Zheng Zhiren; Yu Junhua

    2007-01-01

    The transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure is reported. The transient process of the system, which is induced by the external coherent coupling field, shows the property of no inverse gain. We find that the transient behavior of the probe field can be tuned by the change of tunneling barrier. Both the amplitude of the transient gain and the frequency of the oscillation can be affected by the lifetime broadening

  5. Fabrication and characterization of novel multilayered structures by stereocomplexion of poly(D-lactic acid/poly(L-lactic acid and self-assembly of polyelectrolytes

    Directory of Open Access Journals (Sweden)

    Elena Dellacasa

    2016-01-01

    Full Text Available The enantiomers poly(D-lactic acid (PDLA and poly(L-lactic acid (PLLA were alternately adsorbed directly on calcium carbonate (CaCO3 templates and on poly(styrene sulfonate (PSS and poly(allylamine hydrochloride (PAH multilayer precursors in order to fabricate a novel layer-by-layer (LBL assembly. A single layer of poly(L-lysine (PLL was used as a linker between the (PDLA/PLLAn stereocomplex and the cores with and without the polymeric (PSS/PAHn/PLL multilayer precursor (PEM. Nuclear magnetic resonance (NMR and gel permeation chromatography (GPC were used to characterize the chemical composition and molecular weight of poly(lactic acid polymers. Both multilayer structures, with and without polymeric precursor, were firstly fabricated and characterized on planar supports. A quartz crystal microbalance (QCM, attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR and ellipsometry were used to evaluate the thickness and mass of the multilayers. Then, hollow, spherical microcapsules were obtained by the removal of the CaCO3 sacrificial template. The chemical composition of the obtained microcapsules was confirmed by differential scanning calorimetry (DSC and wide X-ray diffraction (WXRD analyses. The microcapsule morphology was evaluated by scanning electron microscopy (SEM and transmission electron microscopy (TEM measurements. The experimental results confirm the successful fabrication of this innovative system, and its full biocompatibility makes it worthy of further characterization as a promising drug carrier for sustained release.

  6. Effect of non-magnetic intermediate layer on film structure, magnetic properties, and noise characteristics of FeCSi soft magnetic multilayers

    International Nuclear Information System (INIS)

    Kawano, Hiroyasu; Morikawa, Takeshi; Matsumoto, Koji; Shono, Keiji

    2004-01-01

    The film structures, magnetic properties, and noise characteristics of soft magnetic multilayers with alternately stacked FeCSi soft magnetic layers and non-magnetic intermediate layers were investigated. The FeCSi layers in an as-deposited multilayer with C or Ta intermediate layers had the same nano-sized fine crystalline grains and low media noise as an as-deposited FeCSi monolayer. Amorphous C intermediate layers suppressed the amplitude of spike noise especially well. In contrast, FeCSi layers in an as-deposited multilayer with Cr or Ti intermediate layers were composed of coarse crystalline grains, which increased the media noise. The crystallographic match at the interface between the layers in a multilayer could explain these phenomena. The similarity of the atomic arrangement at the interface between layers and the crystallographic match of less than a few percent for the distance between atoms crystallized FeCSi layers with nano-sized fine crystalline grains into ones with coarse crystalline grains during deposition

  7. Tuning magnetic properties of non-collinear magnetization configuration in Pt/[Pt/Co]{sub 6}/Pt/Co/Pt multilayer structure

    Energy Technology Data Exchange (ETDEWEB)

    Kalaycı, Taner, E-mail: taner.kalayci@marmara.edu.tr [Department of Physics, Marmara University, 34722, Kadıköy, Istanbul (Turkey); Deger, Caner [Department of Physics, Marmara University, 34722, Kadıköy, Istanbul (Turkey); Akbulut, Salih [Department of Physics, Gebze Technical University, 41400, Gebze, Kocaeli (Turkey); Yildiz, Fikret, E-mail: fyildiz@gtu.edu.tr [Department of Physics, Gebze Technical University, 41400, Gebze, Kocaeli (Turkey)

    2017-08-15

    Highlights: • Effects of Pt spacer and reference layers thickness are investigated by MOKE and FMR. • Controlling of non-collinear states in multilayered thin film systems is studied. • Micromagnetic approach is used for modeling of magnetic multilayered structure. • Magnetic parameters are determined by a simulation based on metropolis algorithm. - Abstract: In this study, effects of Pt spacer and Co reference layers thickness in [Co/Pt]{sub 6}/Pt/Co multilayer have been revealed to tailor magnetization directions in non-collinear configuration. Magneto-optic Kerr effect and ferromagnetic resonance techniques were employed to investigate magnetic properties. Bilinear coupling between [Co/Pt]{sub 6} and Co layers and anisotropy constants were determined by a micromagnetic simulation based on metropolis algorithm. 3 nm spacer causes ferromagnetic coupling while the samples have 4 and 5 nm spacer are coupled anti-ferromagneticaly. Also, tuning magnetic anisotropy of [Co/Pt]{sub 6} layer was accomplished by Co reference layer. It is revealed that controlling of non-collinear states in such systems is possible by variation of thickness of spacer and reference layers and [Co/Pt]{sub 6}/t{sub Pt}/t{sub Co} trilayer system can be used in multilayered magnetic systems.

  8. Fabrication and characterization of novel multilayered structures by stereocomplexion of poly(D-lactic acid)/poly(L-lactic acid) and self-assembly of polyelectrolytes

    Science.gov (United States)

    Yang, Gesheng; Pastorino, Laura

    2016-01-01

    Summary The enantiomers poly(D-lactic acid) (PDLA) and poly(L-lactic acid) (PLLA) were alternately adsorbed directly on calcium carbonate (CaCO3) templates and on poly(styrene sulfonate) (PSS) and poly(allylamine hydrochloride) (PAH) multilayer precursors in order to fabricate a novel layer-by-layer (LBL) assembly. A single layer of poly(L-lysine) (PLL) was used as a linker between the (PDLA/PLLA)n stereocomplex and the cores with and without the polymeric (PSS/PAH)n/PLL multilayer precursor (PEM). Nuclear magnetic resonance (NMR) and gel permeation chromatography (GPC) were used to characterize the chemical composition and molecular weight of poly(lactic acid) polymers. Both multilayer structures, with and without polymeric precursor, were firstly fabricated and characterized on planar supports. A quartz crystal microbalance (QCM), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and ellipsometry were used to evaluate the thickness and mass of the multilayers. Then, hollow, spherical microcapsules were obtained by the removal of the CaCO3 sacrificial template. The chemical composition of the obtained microcapsules was confirmed by differential scanning calorimetry (DSC) and wide X-ray diffraction (WXRD) analyses. The microcapsule morphology was evaluated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) measurements. The experimental results confirm the successful fabrication of this innovative system, and its full biocompatibility makes it worthy of further characterization as a promising drug carrier for sustained release. PMID:26925356

  9. Effect of Structure and Disorder on the Charge Transport in Defined Self-Assembled Monolayers of Organic Semiconductors.

    Science.gov (United States)

    Schmaltz, Thomas; Gothe, Bastian; Krause, Andreas; Leitherer, Susanne; Steinrück, Hans-Georg; Thoss, Michael; Clark, Timothy; Halik, Marcus

    2017-09-26

    Self-assembled monolayer field-effect transistors (SAMFETs) are not only a promising type of organic electronic device but also allow detailed analyses of structure-property correlations. The influence of the morphology on the charge transport is particularly pronounced, due to the confined monolayer of 2D-π-stacked organic semiconductor molecules. The morphology, in turn, is governed by relatively weak van-der-Waals interactions and is thus prone to dynamic structural fluctuations. Accordingly, combining electronic and physical characterization and time-averaged X-ray analyses with the dynamic information available at atomic resolution from simulations allows us to characterize self-assembled monolayer (SAM) based devices in great detail. For this purpose, we have constructed transistors based on SAMs of two molecules that consist of the organic p-type semiconductor benzothieno[3,2-b][1]benzothiophene (BTBT), linked to a C 11 or C 12 alkylphosphonic acid. Both molecules form ordered SAMs; however, our experiments show that the size of the crystalline domains and the charge-transport properties vary considerably in the two systems. These findings were confirmed by molecular dynamics (MD) simulations and semiempirical molecular-orbital electronic-structure calculations, performed on snapshots from the MD simulations at different times, revealing, in atomistic detail, how the charge transport in organic semiconductors is influenced and limited by dynamic disorder.

  10. Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB Semiconductor Laser Above Threshold

    Directory of Open Access Journals (Sweden)

    M. Seifouri

    2013-10-01

    Full Text Available In this paper, the laterally coupled distributed feedback semiconductor laser is studied. In the simulations performed, variations of structural parameters such as the grating amplitude a, the ridge width W, the thickness of the active region d, and other structural properties are considered. It is concluded that for certain values ​​of structural parameters, the laser maintains the highest output power, the lowest distortion Bragg frequency δL and the smallest changes in the wavelength λ. Above threshold, output power more than 40mW and SMSR values greater than 50 dB were achieved.

  11. Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Chen Bi-Juan; Deng Zheng; Wang Xian-Cheng; Feng Shao-Min; Yuan Zhen; Zhang Si-Jia; Liu Qing-Qing; Jin Chang-Qing

    2016-01-01

    The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized. Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor. (special topic)

  12. Experimental study on the spin-orbit coupling property in low-dimensional semiconductor structures

    International Nuclear Information System (INIS)

    Zhao, Hongming

    2010-01-01

    The spin-orbit coupling and optical properties have been studied in several low-dimensional semiconductor structures. First, the spin dynamics in (001) GaAs/AlGaAs two-dimensional electron gas was investigated by time resolved Kerr rotation technique under a transverse magnetic field. The in-plane spin lifetime is found to be anisotropic. The results show that the electron density in two-dimensional electron gas channel strongly affects the Rashba spin-orbit coupling. Then, a large anisotropy of the magnitude of in-plane conduction electron g factor in asymmetric (001) GaAs/AlGaAs QWs was observed and its tendency of temperature dependence was studied. Second, the experimental study of the in-plane-orientation dependent spin splitting in the C(0001) GaN/AlGaN two-dimensional electron gas at room temperature was reported. The measurement of circular photo-galvanic effect current clearly shows the isotropic in-plane spin splitting in this system for the first time. Third, the first measurement of conduction electron g factor in GaAsN at room temperature was done by using time resolved Kerr rotation technique. It demonstrates that the g factor can be modified drastically by introducing a small amount of nitrogen in GaAs bulk. Finally, the optical characteristic of indirect type II transition in a series of size and shape-controlled linear CdTe/CdSe/CdTe heterostructure nano-rods was studied by steady-state and time resolved photoluminescence. Results show the steady transfer from the direct optical transition (type I) within CdSe to the indirect transition (type II) between CdSe/CdTe as the length of the nano-rods increases. (author)

  13. Asymmetric bistable reflection and polarization switching in a magnetic nonlinear multilayer structure

    DEFF Research Database (Denmark)

    Tuz, Vladimir R.; Novitsky, Denis V.; Prosvirnin, Sergey L.

    2014-01-01

    Optical properties of one-dimensional photonic structures consisting of Kerr-type nonlinear and magnetic layers under the action of an external static magnetic field in the Faraday geometry are investigated. The structure is a periodic arrangement of alternating nonlinear and magnetic layers (a o...

  14. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  15. Nano-structuring of multi-layer material by single x-ray vortex pulse with femtosecond duration

    Science.gov (United States)

    Kohmura, Yoshiki; Zhakhovsky, Vasily; Takei, Dai; Suzuki, Yoshio; Takeuchi, Akihisa; Inoue, Ichiro; Inubushi, Yuichi; Inogamov, Nail; Ishikawa, Tetsuya; Yabashi, Makina

    2018-03-01

    A narrow zero-intensity spot arising from an x-ray vortex has huge potential for future applications such as nanoscopy and nanofabrication. We here present an X-ray Free Electron Laser (XFEL) experiment with a focused vortex wavefront which generated high aspect ratio nanoneedles on a Cr/Au multi-layer (ML) specimen. A sharp needle with a typical width and height of 310 and 600 nm was formed with a high occurrence rate at the center of a 7.71 keV x-ray vortex on this ML specimen, respectively. The observed width exceeds the diffraction limit, and the smallest structures ever reported using an intense-XFEL ablation were fabricated. We found that the elemental composition of the nanoneedles shows a significant difference from that of the unaffected area of Cr/Au ML. All these results are well explained by the molecular dynamics simulations, leading to the elucidation of the needle formation mechanism on an ultra-fast timescale.

  16. B-scan technique for localization and characterization of fatigue cracks around fastener holes in multi-layered structures

    Science.gov (United States)

    Hopkins, Deborah; Datuin, Marvin; Aldrin, John; Warchol, Mark; Warchol, Lyudmila; Forsyth, David

    2018-04-01

    The work presented here aims to develop and transition angled-beam shear-wave inspection techniques for crack localization at fastener sites in multi-layer aircraft structures. This requires moving beyond detection to achieve reliable crack location and size, thereby providing invaluable information for maintenance actions and service-life management. The technique presented is based on imaging cracks in "True" B-scans (depth view projected in the sheets along the beam path). The crack traces that contribute to localization in the True B-scans depend on small, diffracted signals from the crack edges and tips that are visible in simulations and experimental data acquired with sufficient gain. The most recent work shows that cracks rotated toward and away from the central ultrasonic beam also yield crack traces in True B-scans that allow localization in simulations, even for large obtuse angles where experimental and simulation results show very small or no indications in the C-scans. Similarly, for two sheets joined by sealant, simulations show that cracks in the second sheet can be located in True B-scans for all locations studied: cracks that intersect the front or back wall of the second sheet, as well as relatively small mid-bore cracks. These results are consistent with previous model verification and sensitivity studies that demonstrate crack localization in True B-scans for a single sheet and cracks perpendicular to the ultrasonic beam.

  17. Hydrogen depth resolution in multilayer metal structures, comparison of elastic recoil detection and resonant nuclear reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Wielunski, L.S. E-mail: leszekw@optushome.com.au; Grambole, D.; Kreissig, U.; Groetzschel, R.; Harding, G.; Szilagyi, E

    2002-05-01

    Four different metals: Al, Cu, Ag and Au have been used to produce four special multilayer samples to study the depth resolution of hydrogen. The layer structure of each sample was analysed using 2 MeV He Rutherford backscattering spectrometry, 4.5 MeV He elastic recoil detection (ERD) and 30 MeV F{sup 6+} HIERD. Moreover the hydrogen distribution was analysed in all samples using H({sup 15}N, {alpha}{gamma}){sup 12}C nuclear reaction analysis (NRA) with resonance at 6.385 MeV. The results show that the best depth resolution and sensitivity for hydrogen detection are offered by resonance NRA. The He ERD shows good depth resolution only for the near surface hydrogen. In this technique the depth resolution is rapidly reduced with depth due to multiple scattering effects. The 30 MeV F{sup 6+} HIERD demonstrated similar hydrogen depth resolution to He ERD for low mass metals and HIERD resolution is substantially better for heavy metals and deep layers.

  18. Multilayer out-of-plane overlap electrostatic energy harvesting structure actuated by blood pressure for powering intra-cardiac implants

    Science.gov (United States)

    Deterre, M.; Risquez, S.; Bouthaud, B.; Dal Molin, R.; Woytasik, M.; Lefeuvre, E.

    2013-12-01

    We present an innovative multilayer out-of-plane electrostatic energy harvesting device conceived in view of scavenging energy from regular blood pressure in the heart. This concept involves the use of a deformable packaging for the implant in order to transmit the blood pressure to the electrostatic transducer. As shown in previous work, this is possible by using thin metal micro-bellows structure, providing long term hermeticity and high flexibility. The design of the electrostatic device has overcome several challenges such as the very low frequency of the mechanical excitation (1 to 2 Hz) and the small available room in the medical implant. Analytical and numerical models have been used to maximize the capacitance variation, and hence to optimize the energy conversion. We have theoretically shown that a 25-layer transducer with 6-mm diameter and 1-mm thickness could harvest at least 20 mJ per heart beat in the left ventricle under a maximum voltage of 75 V. These results show that the proposed concept is promising and could power the next generation of leadless pacemakers.

  19. Attenuation of stress waves in single and multi-layered structures. [mitigation of elastic and plastic stress waves during spacecraft landing

    Science.gov (United States)

    Yang, J. C. S.; Tsui, C. Y.

    1972-01-01

    Analytical and experimental studies were made of the attenuation of the stress waves during passage through single and multilayer structures. The investigation included studies on elastic and plastic stress wave propagation in the composites and those on shock mitigating material characteristics such as dynamic stress-strain relations and energy absorbing properties. The results of the studies are applied to methods for reducing the stresses imposed on a spacecraft during planetary or ocean landings.

  20. Semiconductor inversion contact - a new heterogeneous structure with two-dimensional zero-mass electron gas

    International Nuclear Information System (INIS)

    Volkov, B.A.; Pankratov, O.A.

    1986-01-01

    Semiconductor inversion junction, presenting the contact of materials in which energy levels corresponding to band edges are mutually inverted. At that, the symmetry of wave function of conductivity band in one material coincides with the symmetry of valence band of the other and vice versa. Specificity of the inversion contact is determined by the presence of electron states independent of the transition band type, which are similar to soliton ones in one-dimensional systems. In the region of the junction the states are characterized by linear massless spectrum nondegenerate in spin. Energy spectrum of the inversion junction for semiconductors of the Pb 1-x Sn y Te x type is considered

  1. The multilayered structure of ultrathin amorphous carbon films synthesized by filtered cathodic vacuum arc deposition

    KAUST Repository

    Wang, Na; Komvopoulos, Kyriakos

    2013-01-01

    The structure of ultrathin amorphous carbon (a-C) films synthesized by filtered cathodic vacuum arc (FCVA) deposition was investigated by high-resolution transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron

  2. Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

    NARCIS (Netherlands)

    Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Dagli, N.; Fiore, A.

    2007-01-01

    The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed.

  3. Improved irradiation tolerance of reactive gas pulse sputtered TiN coatings with a hybrid architecture of multilayered and compositionally graded structures

    Science.gov (United States)

    Liang, Wei; Yang, Jijun; Zhang, Feifei; Lu, Chenyang; Wang, Lumin; Liao, Jiali; Yang, Yuanyou; Liu, Ning

    2018-04-01

    This study investigates the improved irradiation tolerance of reactive gas pulse (RGP) sputtered TiN coatings which has hybrid architecture of multilayered and compositionally graded structures. The multilayered RGP-TiN coating is composed of hexagonal close-packed Ti phase and face-centred cubic TiN phase sublayers, where the former sublayer has a compositionally graded structure and the latter one maintains constant stoichiometric atomic ratio of Ti:N. After 100 keV He ion irradiation, the RGP-TiN coating exhibits improved irradiation resistance compared with its single layered (SL) counterpart. The size and density of He bubbles are smaller in the RGP-TiN coating than in the SL-TiN coating. The irradiation-induced surface blistering of the coatings shows a similar tendency. Meanwhile, the irradiation hardening and adhesion strength of the RGP-TiN coatings were not greatly affected by He irradiation. Moreover, the irradiation damage tolerance of the coatings can be well tuned by changing the undulation period number of N2 gas flow rate. Detailed analysis suggested that this improved irradiation tolerance could be related to the combined contribution of the multilayered and compositionally graded structures.

  4. Probing buried solid-solid interfaces in magnetic multilayer structures and other nanostructures using spectroscopy excited by soft x-ray standing waves

    International Nuclear Information System (INIS)

    Yang, S.-H.; Mun, B.S.; Mannella, N.; Sell, B.; Ritchey, S.B.; Fadley, C.S.; Pham, L.; Nambu, A.; Watanabe, M.

    2004-01-01

    Full text: Buried solid-solid interfaces are becoming increasingly more important in all aspects of nanoscience, and we here dis- cuss the st applications of a new method for selectively studying them with the vuv/soft x-ray spectroscopies. As specific examples, magnetic multilayer structures represent key elements of current developments in spintronics, including giant magnetoresistance, exchange bias, and magnetic tunnel resistance. The buried interfaces in such structures are of key importance to their performance, but have up to now been difficult to study selectively with these spectroscopies. This novel method involves excitation of photoelectrons or fluorescent x-rays with soft x-ray standing waves created by Bragg reflection from a multilayer mirror substrate on which the sample is grown. We will discuss core and valence photoemission, as well soft x-ray emission, results from applying this method to multilayer structures relevant to both giant magnetoresistance (Fe/Cr-[2]) and magnetic tunnel junctions (Al 2 O 3 /FeCo) , including magnetic dichroism measurements. Work supported by the Director, Of e of Science, Of e of Basic Energy Sciences, Materials Science and Engineering Division, U.S. Department of Energy, Contract No. DE-AC03-76SF000

  5. Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe

    Directory of Open Access Journals (Sweden)

    Bouhafs B.

    2012-06-01

    Full Text Available The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge, III-V (GaAs, GaP and II-VI (ZnSe, ZnTe with both methods; tight Binding1 method and pseudo potential method2. This work enables us to understand as well as the mechanism of conduction process in these semiconductors and powers and limits of the above methods. The obtained results allow to conclude that both methods are in a good agreement to describe the morphology of band structures of the cited semiconductors. This encourages us to study in the future the electronic behaviour through the structure of bands for more complex systems such as the heterostructures.

  6. Preparation and dielectric investigation of organic metal insulator semiconductor (MIS) structures with a ferroelectric polymer

    Energy Technology Data Exchange (ETDEWEB)

    Kalbitz, Rene; Fruebing, Peter; Gerhard, Reimund [Department of Physics and Astronomy, University of Potsdam (Germany); Taylor, Martin [School of Electronic Engineering, Bangor University (United Kingdom)

    2010-07-01

    Ferroelectric field effect transistors (FeFETs) offer the prospect of an organic-based memory device. Since the charge transport in the semiconductor is confined to the interface region between the insulator and the semiconductor, the focus of the present study was on the investigation of this region in metal-insulator-semiconductor (MIS) capacitors using dielectric spectroscopy. Capacitance-Voltage (C-V) measurements at different frequencies as well as capacitance-frequency (C-f) measurements after applying different poling voltages were carried out. The C-V measurements yielded information about the frequency dependence of the depletion layer width as well as the number of charges stored at the semiconductor/ insulator interface. The results are compared to numerical calculations based on a model introduced by S. L. Miller (JAP, 72(12), 1992). The C-f measurements revealed three main relaxation processes. An equivalent circuit has been developed to model the frequency response of the MIS capacitor. With this model the origin of the three relaxations may be deduced.

  7. Structure of solid monolayers and multilayers of n-hexane on graphite

    Indian Academy of Sciences (India)

    Unknown

    We present all-atom molecular dynamics simulations of n-hexane on the ... cluster of n-hexane molecules on graphite, using the all-atom interaction model. ... We do not include such molecules in our analyses of the structure factor and other.

  8. Sintering of Multilayered Porous Structures: Part II – Experiments and Model Applications

    DEFF Research Database (Denmark)

    Ni, De Wei; Olevsky, Eugene; Esposito, Vincenzo

    2013-01-01

    Experimental analyses of shrinkage and distortion kinetics during sintering of bilayered porous and dense gadolinium-doped ceria Ce0.9Gd0.1O1.95d structures are carried out, and compared with the theoretical models developed in Part I of this work. A novel approach is developed for the determinat...

  9. Electronic structure and superconductivity of multi-layered organic charge transfer salts

    Energy Technology Data Exchange (ETDEWEB)

    Jeschke, Harald O.; Altmeyer, Michaela; Guterding, Daniel; Valenti, Roser [Institut fuer Theoretische Physik, Goethe-Universitaet Frankfurt, 60438 Frankfurt (Germany)

    2015-07-01

    We examine the electronic properties of polymorphs of (BEDT-TTF){sub 2}Ag(CF{sub 3}){sub 4}(TCE) (1,1,2-trichloroethane) within density functional theory (DFT). While a phase with low superconducting transition temperature T{sub c}=2.6 K exhibits a κ packing motif, two high T{sub c} phases are layered structures consisting of α{sup '} and κ packed layers. We determine the electronic structures and discuss the influence of the insulating α{sup '} layer on the conducting κ layer. In the κ-α{sub 1}{sup '} dual-layered compound, we find that the stripes of high and low charge in the α{sup '} layer correspond to a stripe pattern of hopping parameters in the κ layer. Based on the different underlying Hamiltonians, we study the superconducting properties and try to explain the differences in T{sub c}.

  10. Local atomic interdiffusion in CdTe/HgCdTe multilayered structures

    International Nuclear Information System (INIS)

    Kim, Y.; Ourmazd, A.; Feldman, R.D.; Rentschler, J.A.; Taylor, D.W.; Austin, R.F.

    1989-01-01

    The authors combine chemical lattice imaging with digital pattern recognition to study atomic interdiffusion at individual CdTe/HgCdTe interfaces in multi-quantum well structures. In this way they obtain quantitative composition profiles for as grown samples, and investigate their development as a function of annealing temperature. The authors' results indicate that interdiffusion depends on the position of the quantum well with respect to the surface, beginning first at quantum wells close to the surface, and proceeding towards the substrate. The authors' approach allows the quantification of interdiffusion as a function of time, temperature, and distance from the surface. The implications of these results for the stability of CdTe/HgCdTe structures, and the interpretation of X-ray data are discussed

  11. Spectral scalability and optical spectra of fractal multilayer structures: FDTD analysis

    Science.gov (United States)

    Simsek, Sevket; Palaz, Selami; Mamedov, Amirullah M.; Ozbay, Ekmel

    2017-01-01

    An investigation of the optical properties and band structures for the conventional and Fibonacci photonic crystals (PCs) based on SrTiO3 and Sb2Te3 is made in the present research. Here, we use one-dimensional SrTiO3- and Sb2Te3-based layers. We have theoretically calculated the photonic band structure and transmission spectra of SrTiO3- and Sb2Te3-based PC superlattices. The position of minima in the transmission spectrum correlates with the gaps obtained in the calculation. The intensity of the transmission depths is more intense in the case of higher refractive index contrast between the layers.

  12. Fabrication of multilayered conductive polymer structures via selective visible light photopolymerization

    Science.gov (United States)

    Cullen, Andrew T.; Price, Aaron D.

    2017-04-01

    Electropolymerization of pyrrole is commonly employed to fabricate intrinsically conductive polymer films that exhibit desirable electromechanical properties. Due to their monolithic nature, electroactive polypyrrole films produced via this process are typically limited to simple linear or bending actuation modes, which has hindered their application in complex actuation tasks. This initiative aims to develop the specialized fabrication methods and polymer formulations required to realize three-dimensional conductive polymer structures capable of more elaborate actuation modes. Our group has previously reported the application of the digital light processing additive manufacturing process for the fabrication of three-dimensional conductive polymer structures using ultraviolet radiation. In this investigation, we further expand upon this initial work and present an improved polymer formulation designed for digital light processing additive manufacturing using visible light. This technology enables the design of novel electroactive polymer sensors and actuators with enhanced capabilities and brings us one step closer to realizing more advanced electroactive polymer enabled devices.

  13. Challenges in bimetallic multilayer structure formation: Pt growth on Cu monolayers on Ru(0001)

    DEFF Research Database (Denmark)

    Mancera, Luis A.; Engstfeld, Albert Kilian; Bensch, Andreas

    2017-01-01

    In a joint experimental and theoretical study, we investigated the formation and morphology of PtCu/Ru(0001) bimetallic surfaces grown at room and higher temperatures under UHV conditions. We obtained the PtCu/Ru(0001) surfaces by deposition of Pt atoms on a previously created Cu/Ru(0001) structure...... which includes only one Cu monolayer. Bimetallic surfaces prepared at different Pt coverages are investigated using STM imaging, revealing the existence of reconstruction lines and Cu islands. Although primarily created Cu islands continue growing in size by increasing Pt coverage, a continuous...

  14. Study of asymmetric multilayered structures by means of nonreciprocity in phases

    International Nuclear Information System (INIS)

    Rao, V S C Manga; Gupta, S Dutta; Agarwal, G S

    2004-01-01

    We study symmetric and asymmetric stratified media with resonant absorbers to bring out the role of inversion symmetry and absorption. We show that both can be probed using the reflected fields for excitation of the structure from opposite sides. The phase asymmetry is shown to bear the signature of broken inversion symmetry in lossless systems, while losses in addition lead to the nonreciprocity in the intensity reflection coefficient. We demonstrate how reflected pulses from opposite ends can reveal both of the aspects through their shapes and delays. Moreover, we demonstrate a great flexibility in manipulating the pulse velocities mediated by the resonant atom-field interaction

  15. Bistability, multistability and non-reciprocal light propagation in Thue-Morse multilayered structures

    International Nuclear Information System (INIS)

    Grigoriev, Victor; Biancalana, Fabio

    2010-01-01

    The nonlinear properties of quasi-periodic photonic crystals based on the Thue-Morse sequence are investigated. The intrinsic spatial asymmetry of these one-dimensional structures for odd generation numbers results in bistability thresholds, which are sensitive to the propagation direction. Along with resonances of perfect transmission, this feature allows us to achieve strongly non-reciprocal propagation and to create an all-optical diode. The salient qualitative features of such optical diode action are readily explained through a simple coupled resonator model. The efficiency of a passive scheme that does not necessitate an additional short pump signal is compared to an active scheme where such a signal is required.

  16. Layered structure analysis of multilayers by X-ray reflectometry using the Cu-Kβ line

    International Nuclear Information System (INIS)

    Usami, Katsuhisa; Ueda, Kazuhiro; Hirano, Tatsumi; Hoshiya, Hiroyuki; Narishige, Shinji.

    1997-01-01

    The suitability of X-ray reflectometry using the Cu-K β line for layered structure analysis of NiFe/Cu/NiFe/Ta layered films was studied. Structural parameters such as film thickness, density, and interface width can be determined more accurately than by Cu-K α1 X-ray reflectometry, owing to the abnormal dispersion effect. The standard deviations in determination of film thicknesses were within ±0.3% for NiFe and Ta films and ±0.03 nm for 2 nm Cu film. Those for the densities and interface widths were within ±2% and ±0.04 nm for all films, respectively. Analysis of some layered films regarding the change in Cu film thickness showed that in all these samples the density of the films most closely reflected the density of bulk material, and the interface width between the upper NiFe and Cu films increased with increasing Cu film thickness. (author)

  17. Structure of multilayered Cr(Al)N/SiO{sub x} nanocomposite coatings fabricated by differential pumping co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kawasaki, Masahiro [JEOL USA Inc., 11 Dearborn Road, Peabody, Massachusetts 01960 (United States); Nose, Masateru [Faculty of Art and Design, University of Toyama, 180 Futagami-machi, Takaoka 933-8588 (Japan); Onishi, Ichiro [JEOL Ltd. 3-1-2 Musashino, Akishima, Tokyo 196-8558 (Japan); Shiojiri, Makoto [Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

    2013-11-11

    A Cr(Al)N/38 vol. % SiO{sub x} hard coating was prepared on a (001) Si substrate at 250 °C in a differential pumping co-sputtering system, which has two chambers for radio frequency (RF) sputtering and a substrate holder rotating on the chambers. The composite coating was grown by alternate sputter-depositions from CrAl and SiO{sub 2} targets with flows of N{sub 2}+Ar and Ar at RF powers of 200 and 75 W, respectively, on transition layers grown on the substrate. Analytical electron microscopy reveled that the Cr(Al)N/SiO{sub x} coating had a multilayered structure of Cr(Al)N crystal layers ∼1.6 nm thick and two-dimensionally dispersed amorphous silicon oxide (a-SiO{sub x}) particles with sizes of ∼1 nm or less. The a-SiO{sub x} particles were enclosed with the Cr(Al)N layers. The coating had a low indentation hardness of ∼25 GPa at room temperature, due to a high oxide fraction of 38 vol. % and a low substrate rotational speed of 1 rpm. Faster rotation and lower oxide fraction would make a-SiO{sub x} particles smaller, resulting in the formation of Cr(Al)N crystal including the very fine a-SiO{sub x} particles with small number density. They would work as obstacles for the lattice deformation of the Cr(Al)N crystals. We have fabricated a superhard coating of Cr(Al)N/17 vol. % SiO{sub x} with a hardness of 46 GPa prepared at 12 rpm.

  18. Extraordinary refraction and self-collimation properties of multilayer metallic-dielectric stratified structures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Liwei, E-mail: zlwhpu@hotmail.com [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Chen, Liang [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Zhang, Zhengren [School of Science, Chongqing Jiaotong University, Chongqing 400074 (China); Wang, Wusong [Guizhou Aerospace Institute of Measuring and Testing Technology, Guiyang 550009 (China); Zhao, Yuhuan; Song, Kechao; Kang, Chaoyang [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China)

    2015-01-15

    The extraordinary refraction with negative or zero refraction angle of the layered metamaterial consisting of alternating dielectric and plasmonic layers is theoretically studied. It is shown that the electromagnetic properties can be tuned by the filling factor, the permittivity of the dielectric layer and the plasma frequency of the metallic layer. At different frequency, the layered structures possess different refraction properties with positive, zero or negative refraction angle. By choosing appropriate parameters, positive-to-zero-to-negative-to positive refraction at the desired frequency can be realized. At the frequency with flat equal frequency contour, self-collimation and slow light properties are also found. Such properties can be used in the performance of negative refraction, subwavelength imaging and information propagation.

  19. Development and optimization of thermographic techniques for Non-Destructive Evaluation of multilayered structures

    Science.gov (United States)

    Gavrilov, Dmitry J.

    . Moreover, this analysis should be done on a regular basis to prevent defects from increasing in size over time. Conventional methods, such as infrared photography and X-ray radiography may not be suitable for this application, because most of detachments are too deep for infrared to reach them, and too thin for providing enough contrast on X-ray images. This highlights the need for the development of methodsfor detection of hidden defects and structure of art pieces to detect the structure of art pieces and any hidden defects present. Thermography has strong potential as a tool for non-invasive analysis of works of art and only recently has it been actively promoted into this field. However, due to the general unpredictability of the structure of brushstrokes as well as the properties of paint, it is difficult to apply a physical model to the analysis of paintings. In addition, an improved method is proposed. This proposed method is mainly based on PCT, but it is capable of returning clear images of subsurface defects and the structure of the support. Unlike standard PCT images, the images acquired by this method do not exhibit visually similar features.

  20. Improving the surface structure of high quality Sr{sub 2}FeMoO{sub 6} thin films for multilayer structures

    Energy Technology Data Exchange (ETDEWEB)

    Angervo, I., E-mail: ijange@utu.fi [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); University of Turku Graduate School (UTUGS), University of Turku, FI-20014 Turku (Finland); Saloaro, M. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); Tikkanen, J. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); University of Turku Graduate School (UTUGS), University of Turku, FI-20014 Turku (Finland); Huhtinen, H.; Paturi, P. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland)

    2017-02-28

    Highlights: • The effects of PLD laser fluence and deposition temperature are investigated on SFMO thin films. • We focus on improving the surface structure of the SFMO thin films. • Both the surface structure and the Curie temperature can be improved by fabricating the films at 900 °C. - Abstract: Two sets of Sr{sub 2}FeMoO{sub 6} thin films were prepared with pulsed laser deposition and the effect of the laser fluence and the deposition temperature was investigated. The Sr{sub 2}FeMoO{sub 6} thin films showed clear evidence of impurity phases when the laser fluence was altered. Phase pure films resulted through the whole temperature range between 900 °C and 1050 °C when a proper laser fluence was used. Films fabricated at lower deposition temperatures resulted with smaller surface roughnesses around 5 nm, higher Curie temperatures and with relatively high saturation magnetization values. The Curie temperature was determined from the minimum of the first order derivative and results showed the highest values of 350 K and above. The films with the highest Curie temperature reached zero magnetization above 400 K. The results indicate that both high microstructural and high magnetic quality Sr{sub 2}FeMoO{sub 6} thin films can be obtained with a deposition temperature between 900 °C and 950 °C. This provides better fabrication parameters for the upcoming SFMO multilayer structures.

  1. Surface and interfacial interactions of multilayer graphitic structures with local environment

    International Nuclear Information System (INIS)

    Mazzocco, R.; Robinson, B.J.; Rabot, C.; Delamoreanu, A.; Zenasni, A.; Dickinson, J.W.; Boxall, C.; Kolosov, O.V.

    2015-01-01

    In order to exploit the potential of graphene in next-generation devices, such as supercapacitors, rechargeable batteries, displays and ultrathin sensors, it is crucial to understand the solvent interactions with the graphene surface and interlayers, especially where the latter may be in competition with the former, in the medium of application deployment. In this report, we combine quartz crystal microbalance (QCM) and ultrasonic force microscopy methods to investigate the changes in the film–substrate and film–environment interfaces of graphene and graphene oxide films, produced by diverse scalable routes, in both polar (deionised water) and non-polar (dodecane) liquid and vapour environments. In polar liquid environments, we observe nanobubble adsorption/desorption on the graphene film corresponding to a surface coverage of up to 20%. As no comparable behaviour is observed for non-polar environment, we conclude that nanobubble formation is directly due to the hydrophobic nature of graphene with direct consequences for electrode structures immersed in electrolyte solutions. The amount of water adsorbed by the graphene films was found to vary considerably from 0.012 monolayers of water per monolayer of reduced graphene oxide to 0.231 monolayers of water per monolayer of carbon diffusion growth graphene. This is supported by direct nanomechanical mapping of the films immersed in water where an increased variation of local stiffness suggests water propagation within the film and/or between the film and substrate. Transferred film thickness calculations performed for QCM, atomic force microscopy topography and optical transmission measurements, returns results an order of magnitude larger (46 ± 1 layers) than Raman spectroscopy (1 - 2 graphene layers) on pristine pre-transferred films due to contamination during transfer and possible turbostratic structures of large areas. - Highlights: • Exploring interaction of graphene films with polar and nonpolar liquids

  2. Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

    Science.gov (United States)

    Isik, Dilek

    This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

  3. Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure

    Science.gov (United States)

    Kostrov, Alexander I.; Stempitsky, Viktor R.; Kazimirchik, Vladimir N.

    2008-07-01

    In this work, we present a physical model and electrical macromodel for simulation of Magnetic Tunnel Junction (MTJ) effect based on Ferromagnetic/Insulator/Semiconductor (FIS) nanostructure. A modified Brinkman model has been proposed by including the voltage-dependent density of states of the ferromagnetic electrodes in order to explain the bias dependence magnitoresistance. The model takes into account injection of carriers in the semiconductor and Shottky barrier, electron tunneling through thin insulator and spin-transfer torque writing approach in memory cell. These very promising features should constitute the third generation of Magnetoresistive RAM (MRAM). Besides, the model can efficiently be used to design magnetic CMOS circuits. The behavioral macro-model has been developed by means of Verilog-AMS language and implemented on the Cadence Virtuoso platform with Spectre simulator.

  4. Magnetoresistive multilayers deposited on the AAO membranes

    International Nuclear Information System (INIS)

    Malkinski, Leszek M.; Chalastaras, Athanasios; Vovk, Andriy; Jung, Jin-Seung; Kim, Eun-Mee; Jun, Jong-Ho; Ventrice, Carl A.

    2005-01-01

    Silicon and GaAs wafers are the most commonly used substrates for deposition of giant magnetoresistive (GMR) multilayers. We explored a new type of a substrate, prepared electrochemically by anodization of aluminum sheets, for deposition of GMR multilayers. The surface of this AAO substrate consists of nanosized hemispheres organized in a regular hexagonal array. The current applied along the substrate surface intersects many magnetic layers in the multilayered structure, which results in enhancement of giant magnetoresistance effect. The GMR effect in uncoupled Co/Cu multilayers was significantly larger than the magnetoresistance of similar structures deposited on Si

  5. SEMICONDUCTOR INTEGRATED CIRCUITS: A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

    Science.gov (United States)

    Jizhi, Liu; Xingbi, Chen

    2009-12-01

    A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.

  6. Computer simulation model of the structure of ion implanted impurities in semiconductors

    International Nuclear Information System (INIS)

    Roman, E.; Majlis, N.

    1983-02-01

    A system of ion implanted impurities in a semiconductor is described by a Monte Carlo simulation of a non-equilibrium system of random distributed hard spheres. The radial distribution function of this system is found. The comparison is made with the fluid hard sphere case. The assumption of the absence either of annealing or diffusion of the impurities after the implantation process is also made. (author)

  7. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    International Nuclear Information System (INIS)

    Yanchev, I.

    2003-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential to which it leads in distinction with the so far known correlation functions leading to a divergent dispersion. The dispersion, an important characteristic of the random potential distribution, determining the amplitude of the potential fluctuations is calculated

  8. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in mis-structures

    International Nuclear Information System (INIS)

    Yanchev, I; Slavcheva, G.

    1993-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential Γ 2 to which it leads in distinction with the so far known correlation functions leading to divergent dispersion. The important characteristic of the random potential distribution Γ 2 determining the amplitude of the potential fluctuations is calculated. 7 refs. (orig.)

  9. Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

    International Nuclear Information System (INIS)

    Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

    2014-01-01

    Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm–320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ∼75% UV absorption and hot electron excitation can be achieved within the mean free path of ∼20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices. (paper)

  10. Potential fluctuations due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    International Nuclear Information System (INIS)

    Slavcheva, G.; Yanchev, I.

    1991-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening due to the image charge with respect to the metal electrode in MIS-structure is taken into account, introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential Γ 2 to which it leads in distinction with the so far known correlation functions leading to divergent dispersion. The important characteristic of the random potential distribution Γ 2 determining the amplitude of the potential fluctuations is calculated. (author). 7 refs, 1 fig

  11. Band structure of semiconductor compounds of Mg sub 2 Si and Mg sub 2 Ge with strained crystal lattice

    CERN Document Server

    Krivosheeva, A V; Shaposhnikov, V L; Krivosheev, A E; Borisenko, V E

    2002-01-01

    The effect of isotopic and unaxial deformation of the crystal lattice on the electronic band structure of indirect band gap semiconductors Mg sub 2 Si and Mg sub 2 Ge has been simulated by means of the linear augmented plane wave method. The reduction of the lattice constant down to 95 % results in a linear increase of the direct transition in magnesium silicide by 48%. The stresses arising under unaxial deformation shift the bands as well as result in splitting of degenerated states. The dependence of the interband transitions on the lattice deformation is nonlinear in this case

  12. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    CERN Document Server

    Yanchev, I

    2003-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential to which it leads in distinction with the so far known correlation functions leading to a divergent dispersion. The dispersion, an important characteristic of the random potential distribution, determining the amplitude of the potential fluctuations is calculated.

  13. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    Energy Technology Data Exchange (ETDEWEB)

    Yanchev, I

    2003-07-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential to which it leads in distinction with the so far known correlation functions leading to a divergent dispersion. The dispersion, an important characteristic of the random potential distribution, determining the amplitude of the potential fluctuations is calculated.

  14. Structure and magnetism of transition-metal implanted dilute magnetic semiconductors

    CERN Document Server

    Pereira, Lino; Temst, K; Araújo, JP; Wahl, U

    The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics. Among the many types of DMS materials which have been investigated, the current research interest can be narrowed down to two main classes of materials: (1) narrow-gap III-V semiconductors, mostly GaAs and InAs, doped with Mn; (2) wide-gap oxides and nitrides doped with 3d transition metals, mostly Mn- and Co-doped ZnO and Mn-doped GaN. With a number of interesting functionalities deriving from the carrier-mediated ferromagnetism and demonstrated in various proof-of-concept devices, Mn-doped GaAs has become, among DMS materials, one of the best candidates for technological application. However, despite major developments over the last 15 years, the maximum Curie temperature (185 K) remains well below room temperature. On the other hand, wide-gap DMS materials appear to exhibit ferromagnetic behavior...

  15. Energy resolved electrochemical impedance spectroscopy for electronic structure mapping in organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Nádaždy, V., E-mail: nadazdy@savba.sk; Gmucová, K. [Institute of Physics SAS, Dúbravská cesta 9, 845 11 Bratislava (Slovakia); Schauer, F. [Faculty of Education, Trnava University in Trnava, 918 43 Trnava (Slovakia); Faculty of Applied Informatics, Tomas Bata University in Zlin, 760 05 Zlin (Czech Republic)

    2014-10-06

    We introduce an energy resolved electrochemical impedance spectroscopy method to map the electronic density of states (DOS) in organic semiconductor materials. The method consists in measurement of the charge transfer resistance of a semiconductor/electrolyte interface at a frequency where the redox reactions determine the real component of the impedance. The charge transfer resistance value provides direct information about the electronic DOS at the energy given by the electrochemical potential of the electrolyte, which can be adjusted using an external voltage. A simple theory for experimental data evaluation is proposed, along with an explanation of the corresponding experimental conditions. The method allows mapping over unprecedentedly wide energy and DOS ranges. Also, important DOS parameters can be determined directly from the raw experimental data without the lengthy analysis required in other techniques. The potential of the proposed method is illustrated by tracing weak bond defect states induced by ultraviolet treatment above the highest occupied molecular orbital in a prototypical σ-conjugated polymer, poly[methyl(phenyl)silylene]. The results agree well with those of our previous DOS reconstruction by post-transient space-charge-limited-current spectroscopy, which was, however, limited to a narrow energy range. In addition, good agreement of the DOS values measured on two common π-conjugated organic polymer semiconductors, polyphenylene vinylene and poly(3-hexylthiophene), with the rather rare previously published data demonstrate the accuracy of the proposed method.

  16. Theoretical study of ferromagnetic resonance in exchange - coupled magnetic / nonmagnetic / magnetic multilayer structure

    International Nuclear Information System (INIS)

    Oezdogan, K.; Oezdemir, M.; Yalcin, O.; Aktas, B.

    2002-01-01

    The dispersion relation on ferromagnetic films was calculation by using torque equation of motion with a damping term. The total energy including zeeman, demagnetizing and anisotropy energy terms was used to get ferromagnetic resonance frequency for both uniform and higher order spin wave modes. In antiferromagnetic films, the torque equation of motion for each sub-lattice were written to derive an expression for the dispersion relation. The magnetic trilayer system under investigation consist of two ferromagnetic layers separated by a nonmagnetic layer. The dispersion relation of magnetic/nonmagnetic/magnetic three layers is calculated by using Landau-Lifshitz dynamic equation of motion for the magnetization with interlayer exchange energy. As for the exchange-coupled resonance of ferromagnetic resonance (FMR), the theoretical study has been calculated for both symmetrical and asymmetrical structures. In this systems, the exchange-coupling parameter A 12 between neighboring layers was used to get resonance fields as a function of the angle between the magnetization vectors of each magnetic layers

  17. Associative account of self-cognition: extended forward model and multi-layer structure

    Directory of Open Access Journals (Sweden)

    Motoaki eSugiura

    2013-08-01

    Full Text Available The neural correlates of self identified by neuroimaging studies differ depending on which aspects of self are addressed. Here, three categories of self are proposed based on neuroimaging findings and an evaluation of the likely underlying cognitive processes. The physical self, representing self-agency of action, body ownership, and bodily self-recognition, is supported by the sensory and motor association cortices located primarily in the right hemisphere. The interpersonal self, representing the attention or intentions of others directed at the self, is supported by several amodal association cortices in the dorsomedial frontal and lateral posterior cortices. The social self, representing the self as a collection of context-dependent social values, is supported by the ventral aspect of the medial prefrontal cortex and the posterior cingulate cortex. Despite differences in the underlying cognitive processes and neural substrates, all three categories of self are likely to share the computational characteristics of the forward model, which is underpinned by internal schema or learned associations between one’s behavioral output and the consequential input. Additionally, these three categories exist within a hierarchical layer structure based on developmental processes that updates the schema through the attribution of prediction error. In this account, most of the association cortices critically contribute to some aspect of the self through associative learning while the primary regions involved shift from the lateral to the medial cortices in a sequence from the physical to the interpersonal to the social self.

  18. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  19. Fabrication, Structural Characterization and Uniaxial Tensile Properties of Novel Sintered Multi-Layer Wire Mesh Porous Plates

    Directory of Open Access Journals (Sweden)

    Liuyang Duan

    2018-01-01

    Full Text Available There is an increasing interest in developing porous metals or metallic foams for functional and structural applications. The study of the physical and mechanical properties of porous metals is very important and helpful for their application. In this paper, a novel sintered multilayer wire mesh porous plate material (WMPPs with a thickness of 0.5 mm–3 mm and a porosity of 10–35% was prepared by winding, pressing, rolling, and subsequently vacuum sintering them. The pore size and total size distribution in the as-prepared samples were investigated using the bubble point method. The uniaxial tensile behavior of the WMPPs was investigated in terms of the sintering temperature, porosity, wire diameter, and manufacturing technology. The deformation process and the failure mechanism under the tensile press was also discussed based on the appearance of the fractures (SEM figures. The results indicated that the pore size and total size distribution were closely related to the raw material used and the sintering temperature. For the WMPPs prepared by the wire mesh, the pore structures were inerratic and the vast majority of pore size was less than 10 μm. On the other hand, for the WMPPs that were prepared by wire mesh and powder, the pore structures were irregular and the pore size ranged from 0 μm–50 μm. The experimental data showed that the tensile strength of WMPPs is much higher than any other porous metals or metallic foams. Higher sintering temperatures led to coarser joints between wires and resulted in higher tensile strength. The sintering temperature decreased from 1330 °C to 1130 °C and the tensile strength decreased from 296 MPa to 164 MPa. Lower porosity means that there are more metallurgical joints and metallic frameworks resisting deformation per unit volume. Therefore, lower porosities exhibit higher tensile strength. An increase of porosity from 17.14% to 32.5% led to the decrease of the tensile strength by 90 MPa. The

  20. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.