WorldWideScience

Sample records for semiconductor manufacturing conference

  1. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  2. Fundamentals of semiconductor manufacturing and process control

    CERN Document Server

    May, Gary S

    2006-01-01

    A practical guide to semiconductor manufacturing from process control to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Control covers all issues involved in manufacturing microelectronic devices and circuits, including fabrication sequences, process control, experimental design, process modeling, yield modeling, and CIM/CAM systems. Readers are introduced to both the theory and practice of all basic manufacturing concepts. Following an overview of manufacturing and technology, the text explores process monitoring methods, including those that focus on product wafers and those that focus on the equipment used to produce wafers. Next, the text sets forth some fundamentals of statistics and yield modeling, which set the foundation for a detailed discussion of how statistical process control is used to analyze quality and improve yields. The discussion of statistical experimental design offers readers a powerful approach for systematically varying controllable p...

  3. Semiconductors integrated circuit design for manufacturability

    CERN Document Server

    Balasinki, Artur

    2011-01-01

    Because of the continuous evolution of integrated circuit manufacturing (ICM) and design for manufacturability (DfM), most books on the subject are obsolete before they even go to press. That's why the field requires a reference that takes the focus off of numbers and concentrates more on larger economic concepts than on technical details. Semiconductors: Integrated Circuit Design for Manufacturability covers the gradual evolution of integrated circuit design (ICD) as a basis to propose strategies for improving return-on-investment (ROI) for ICD in manufacturing. Where most books put the spotl

  4. Method for manufacturing a semiconductor device

    NARCIS (Netherlands)

    Ishihara, R.; Baiano, A.

    2009-01-01

    The invention relates to a method for manufacturing a semiconductor device on a substrate provided with a silicon-oxide layer, by forming at least one hole in said silicon-oxide layer and depositing on said silicon-oxide layer an amorphous silicon-film which fills said at least one hole and covers a

  5. Microeconomics of process control in semiconductor manufacturing

    Science.gov (United States)

    Monahan, Kevin M.

    2003-06-01

    Process window control enables accelerated design-rule shrinks for both logic and memory manufacturers, but simple microeconomic models that directly link the effects of process window control to maximum profitability are rare. In this work, we derive these links using a simplified model for the maximum rate of profit generated by the semiconductor manufacturing process. We show that the ability of process window control to achieve these economic objectives may be limited by variability in the larger manufacturing context, including measurement delays and process variation at the lot, wafer, x-wafer, x-field, and x-chip levels. We conclude that x-wafer and x-field CD control strategies will be critical enablers of density, performance and optimum profitability at the 90 and 65nm technology nodes. These analyses correlate well with actual factory data and often identify millions of dollars in potential incremental revenue and cost savings. As an example, we show that a scatterometry-based CD Process Window Monitor is an economically justified, enabling technology for the 65nm node.

  6. Semiconductor Manufacturing Final Air Toxics Rules Fact Sheets

    Science.gov (United States)

    This page contains a February 2003 fact sheet for the final NESHAP for Semiconductor Manufacturing. This page also contains a July 2008 fact sheet with information regarding the final amendments to the 2003 final rule for the NESHAP.

  7. Laser cooling in semiconductors (Conference Presentation)

    Science.gov (United States)

    Zhang, Jun

    2017-06-01

    Laser cooling of semiconductor is very important topic in science researches and technological applications. Here we will report our progresses on laser cooling in semiconductors. By using of strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, we observe a net cooling by about 40 K starting from 290 kelvin with 514-nm pumping and about 15 K starting from100 K with 532-nm pumping in a semiconductor using group-II-VI cadmium sulphide nanobelts. We also discuss the thickness dependence of laser cooing in CdS nanobelts, a concept porotype of semiconductor cryocooler and possibility of laser cooling in II-VI semiconductor family including CdSSe、CdSe, CdSe/ZnTe QDs and bulk CdS et al., Beyond II-VI semiconductor, we will present our recent progress in laser cooling of organic-inorganic perovskite materials, which show a very big cooling power and external quantum efficiency in 3D and 2D case. Further more, we demonstrate a resolved sideband Raman cooling of a specific LO phonon in ZnTe, in which only one specific phonon resonant with exciton can be cooled or heated. In the end, we will discuss the nonlinear anti-Stokes Raman and anti-Stokes photoluminescence upcoversion in very low temperature as low as down to liquid 4.2 K. In this case, the anti-Stokes resonance induces a quadratic power denpendece of anti-Stokes Raman and anti-Stokes PL. We proposed a CARS-like process to explain it. This nonlinear process also provides a possible physics picture of ultra-low temperatures phonon assisted photoluminescence and anti-Stokes Raman process.

  8. 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors

    CERN Document Server

    Saraniti, M; Nonequilibrium Carrier Dynamics in Semiconductors

    2006-01-01

    International experts gather every two years at this established conference to discuss recent developments in theory and experiment in non-equilibrium transport phenomena. These developments have been the driving force behind the spectacular advances in semiconductor physics and devices over the last few decades. Originally known as "Hot Carriers in Semiconductors," the 14th conference in the series covered a wide spectrum of traditional topics dealing with non-equilibrium phenomena, ranging from quantum transport to optical phenomena in mesoscopic and nano-scale structures. Particular attention was given this time to emerging areas of this rapidly evolving field, with many sessions covering terahertz devices, high field transport in nitride semiconductors, spintronics, molecular electronics, and bioelectronics applications.

  9. Strengthening the Competitiveness and Sustainability of a Semiconductor Manufacturer with Cloud Manufacturing

    Directory of Open Access Journals (Sweden)

    Toly Chen

    2014-01-01

    Full Text Available Cloud manufacturing (CMfg is a new-generation service-oriented networked manufacturing model that provides distributed users centralized managed manufacturing resources, ability, and services. CMfg is applied here to a semiconductor manufacturing factory. Benefits are classified into five aspects: cost savings, efficiency, additional data analysis capabilities, flexibility, and closer partner relationships. A strength, weakness, opportunity, and threat (SWOT analysis is done which guides a semiconductor manufacturer in planning CMfg implementation projects. Simulation of a wafer fabrication factory (wafer fab is used as an example. Several CMfg services are proposed for assisting the fab simulation activities through the collaboration of cloud service providers, software vendors, equipment suppliers, and the wafer fab. The connection with the competitiveness and sustainability of a wafer fab is also stressed.

  10. 23rd International Conference on Flexible Automation & Intelligent Manufacturing

    CERN Document Server

    2013-01-01

    The proceedings includes the set of revised papers from the 23rd International Conference on Flexible Automation and Intelligent Manufacturing (FAIM 2013). This conference aims to provide an international forum for the exchange of leading edge scientific knowledge and industrial experience regarding the development and integration of the various aspects of Flexible Automation and Intelligent Manufacturing Systems covering the complete life-cycle of a company’s Products and Processes. Contents will include topics such as: Product, Process and Factory Integrated Design, Manufacturing Technology and Intelligent Systems, Manufacturing Operations Management and Optimization and Manufacturing Networks and MicroFactories.

  11. Second International Conference on Neutron Transmutation Doping in Semiconductors

    CERN Document Server

    Neutron Transmutation Doping in Semiconductors

    1979-01-01

    This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con­ ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 perso...

  12. 4th International Conference on Sustainable Design and Manufacturing

    CERN Document Server

    Howlett, Robert; Setchi, Rossi; Cimatti, Barbara

    2017-01-01

    This volume includes papers presented at the 4th International Conference on Sustainable Design and Manufacturing (SDM-17) held in Bologna, Italy, in April 2017. The conference covered a wide range of topics from cutting-edge sustainable product design and service innovation, sustainable processes and technology for the manufacturing of sustainable products, sustainable manufacturing systems and enterprises, decision support for sustainability, and the study of the societal impact of sustainability including research for circular economy. Application areas are wide and varied, and the book provides an excellent overview of the latest research and development in the area of Sustainable Design and Manufacturing.

  13. 75 FR 879 - National Semiconductor Corporation Arlington Manufacturing Site Including On-Site Leased Workers...

    Science.gov (United States)

    2010-01-06

    ... DEPARTMENT OF LABOR Employment and Training Administration [TA-W-70,351] National Semiconductor..., applicable to workers of National Semiconductor Corporation, Arlington Manufacturing Site, including on-site..., Texas location of National Semiconductor Corporation. The Department has determined that these workers...

  14. Microeconomics of yield learning and process control in semiconductor manufacturing

    Science.gov (United States)

    Monahan, Kevin M.

    2003-06-01

    Simple microeconomic models that directly link yield learning to profitability in semiconductor manufacturing have been rare or non-existent. In this work, we review such a model and provide links to inspection capability and cost. Using a small number of input parameters, we explain current yield management practices in 200mm factories. The model is then used to extrapolate requirements for 300mm factories, including the impact of technology transitions to 130nm design rules and below. We show that the dramatic increase in value per wafer at the 300mm transition becomes a driver for increasing metrology and inspection capability and sampling. These analyses correlate well wtih actual factory data and often identify millions of dollars in potential cost savings. We demonstrate this using the example of grating-based overlay metrology for the 65nm node.

  15. 2014 Joint Conference on Mechanical Design Engineering and Advanced Manufacturing

    CERN Document Server

    Daidie, Alain; Eynard, Benoit; Paredes, Manuel

    2016-01-01

    Covering key topics in the field such as technological innovation, human-centered sustainable engineering and manufacturing, and manufacture at a global scale in a virtual world, this book addresses both advanced techniques and industrial applications of key research in interactive design and manufacturing. Featuring the full papers presented at the 2014 Joint Conference on Mechanical Design Engineering and Advanced Manufacturing, which took place in June 2014 in Toulouse, France, it presents recent research and industrial success stories related to implementing interactive design and manufacturing solutions.

  16. Big Data Analytics for Smart Manufacturing: Case Studies in Semiconductor Manufacturing

    Directory of Open Access Journals (Sweden)

    James Moyne

    2017-07-01

    Full Text Available Smart manufacturing (SM is a term generally applied to the improvement in manufacturing operations through integration of systems, linking of physical and cyber capabilities, and taking advantage of information including leveraging the big data evolution. SM adoption has been occurring unevenly across industries, thus there is an opportunity to look to other industries to determine solution and roadmap paths for industries such as biochemistry or biology. The big data evolution affords an opportunity for managing significantly larger amounts of information and acting on it with analytics for improved diagnostics and prognostics. The analytics approaches can be defined in terms of dimensions to understand their requirements and capabilities, and to determine technology gaps. The semiconductor manufacturing industry has been taking advantage of the big data and analytics evolution by improving existing capabilities such as fault detection, and supporting new capabilities such as predictive maintenance. For most of these capabilities: (1 data quality is the most important big data factor in delivering high quality solutions; and (2 incorporating subject matter expertise in analytics is often required for realizing effective on-line manufacturing solutions. In the future, an improved big data environment incorporating smart manufacturing concepts such as digital twin will further enable analytics; however, it is anticipated that the need for incorporating subject matter expertise in solution design will remain.

  17. Optimization of a semiconductor manufacturing process using a reentrant model

    Directory of Open Access Journals (Sweden)

    Sarah Abuhab Valente

    2015-01-01

    Full Text Available The scope of this work is the simulation of a semiconductor manufacturing model in Arena® software and subsequent optimization and sensitivity analysis of this model. The process is considered extremely complex given the amount of steps, machinery, parameters, and highly reentrant characteristics, which makes it difficult to reach stability of production process. The production model used was the Intel Five-Machine Six-Step Mini-fab developed by Karl Kempf (1994. It was programmed in Arena® and optimized by OptQuest®, an add-on. We concluded that variation in the number of machines and operators reflects on cycle time only if there is an increase of one unit of resource more than obtained in the optimization. As a result, we highlighted the scenario where a reduction in cycle time stood out, in which one extra unit was added in the second machine group, representing a 7.41% reduction in cycle time.

  18. International Joint Conference on Mechanics, Design Engineering & Advanced Manufacturing

    CERN Document Server

    Nigrelli, Vincenzo; Oliveri, Salvatore; Peris-Fajarnes, Guillermo; Rizzuti, Sergio

    2017-01-01

    This book gathers papers presented at the International Joint Conference on Mechanics, Design Engineering and Advanced Manufacturing (JCM 2016), held on 14-16 September, 2016, in Catania, Italy. It reports on cutting-edge topics in product design and manufacturing, such as industrial methods for integrated product and process design; innovative design; and computer-aided design. Further topics covered include virtual simulation and reverse engineering; additive manufacturing; product manufacturing; engineering methods in medicine and education; representation techniques; and nautical, aeronautics and aerospace design and modeling. The book is divided into eight main sections, reflecting the focus and primary themes of the conference. The contributions presented here will not only provide researchers, engineers and experts in a range of industrial engineering subfields with extensive information to support their daily work; they are also intended to stimulate new research directions, advanced applications of t...

  19. 3rd International Conference on Sustainable Design and Manufacturing

    CERN Document Server

    Howlett, Robert; Liu, Ying; Theobald, Peter

    2016-01-01

    This volumes consists of 59 peer-reviewed papers, presented at the International Conference on Sustainable Design and Manufacturing (SDM-16) held in Chania, Crete Greece in April 2016. Leading-edge research into sustainable design and manufacturing aims to enable the manufacturing industry to grow by adopting more advanced technologies, and at the same time improve its sustainability by reducing its environmental impact. SDM-16 covers a wide range of topics from sustainable product design and service innovation, sustainable process and technology for the manufacturing of sustainable products, sustainable manufacturing systems and enterprises, decision support for sustainability, and the study of societal impact of sustainability including research for circular economy. Application areas are wide and varied. The book will provide an excellent overview of the latest research and development in the area of Sustainable Design and Manufacturing.

  20. TiCl4 Barrier Process Engineering in Semiconductor Manufacturing

    Directory of Open Access Journals (Sweden)

    Tuung Luoh

    2016-01-01

    Full Text Available Titanium nitride (TiN not only was utilized in the wear-resistant coatings industry but it was also adopted in barrier processes for semiconductor manufacturing. Barrier processes include the titanium (Ti and TiN processes, which are commonly used as diffusion barriers in via/contact applications. However, engineers frequently struggle at the via/contact module in the beginning of every technology node. As devices shrink, barrier processes become more challenging to overcome the both the physical fill-in and electrical performance requirements of advanced small via/contact plugs. The aim of this paper is to investigate various chemical vapor deposition (CVD TiCl4-based barrier processes to serve the application of advanced small via/contact plugs and the metal gate processes. The results demonstrate that the plasma-enhanced chemical vapor deposition (PECVD TiCl4-based Ti process needs to select a feasible process temperature to avoid Si surface corrosion by high-temperature chloride flow. Conventional high step coverage (HSC CVD TiCl4-based TiN processes give much better impurity performance than metal organic chemical vapor deposition (MOCVD TiN. However, the higher chloride content in HSC film may degrade the long-term reliability of the device. Furthermore, it is evidenced that a sequential flow deposition (SFD CVD TiCl4-based process with multiple cycles can give much less chloride content, resulting in faster erase speeds and lower erase levels than that of conventional HSC TiN.

  1. Dissolved air flotation of polishing wastewater from semiconductor manufacturer.

    Science.gov (United States)

    Liu, J C; Lien, C Y

    2006-01-01

    The feasibility of the dissolved air flotation (DAF) process in treating chemical mechanical polishing (CMP) wastewater was evaluated in this study. Wastewater from a local semiconductor manufacturer was sampled and characterised. Nano-sized silica (77.6 nm) with turbidity of 130 +/- 3 NTU was found in the slightly alkaline wastewater with traces of other pollutants. Experimental results indicated removal efficiency of particles, measured as suspended particle or turbidity, increased with increasing concentration of cationic collector cetyltrimethyl ammonium bromide (CTAB). When CTAB concentration was 30 mg/L, pH of 6.5 +/- 0.1 and recycle ratio of 30%, very effective removal of particles (> 98%) was observed in saturation pressure range of 4 to 6 kg/cm2, and the reaction proceeded faster under higher pressure. Similarly, the reaction was faster under the higher recycle ratio, while final removal efficiency improved slightly as the recycle ratio increased from 20 to 40%. An insignificant effect of pH on treatment efficiency was found as pH varied from 4.5 to 8.5. The presence of activator, Al3+ and Fe3+, enhanced the system performance. It is proposed that CTAB adsorbs on silica particles in polishing wastewater through electrostatic interaction and makes particles more hydrophobic. The increase in hydrophobicity results in more effective bubble-particle collisions. In addition, flocculation of silica particles through bridging effect of collector was found; it is believed that flocculation of particles also contributed to flotation. Better attachment between gas bubble and solid, higher buoyancy and higher air to solid ratio all lead to effective flotation.

  2. 5th International Conference on Advanced Manufacturing Engineering and Technologies

    CERN Document Server

    Jakovljevic, Zivana; NEWTECH2017

    2017-01-01

    This book presents the proceedings from the 5th NEWTECH conference (Belgrade, Serbia, 5–9 June 2017), the latest in a series of high-level conferences that bring together experts from academia and industry in order to exchange knowledge, ideas, experiences, research results, and information in the field of manufacturing. The range of topics addressed is wide, including, for example, machine tool research and in-machine measurements, progress in CAD/CAM technologies, rapid prototyping and reverse engineering, nanomanufacturing, advanced material processing, functional and protective surfaces, and cyber-physical and reconfigurable manufacturing systems. The book will benefit readers by providing updates on key issues and recent progress in manufacturing engineering and technologies and will aid the transfer of valuable knowledge to the next generation of academics and practitioners. It will appeal to all who work or conduct research in this rapidly evolving field.

  3. EDITORIAL: Extreme Ultraviolet Light Sources for Semiconductor Manufacturing

    Science.gov (United States)

    Attwood, David

    2004-12-01

    The International Technology Roadmap for Semiconductors (ITRS) [1] provides industry expectations for high volume computer chip fabrication a decade into the future. It provides expectations to anticipated performance and requisite specifications. While the roadmap provides a collective projection of what international industry expects to produce, it does not specify the technology that will be employed. Indeed, there are generally several competing technologies for each two or three year step forward—known as `nodes'. Recent successful technologies have been based on KrF (248 nm), and now ArF (193 nm) lasers, combined with ultraviolet transmissive refractive optics, in what are known as step and scan exposure tools. Less fortunate technologies in the recent past have included soft x-ray proximity printing and, it appears, 157 nm wavelength F2 lasers. In combination with higher numerical aperture liquid emersion optics, 193 nm is expected to be used for the manufacture of leading edge chip performance for the coming five years. Beyond that, starting in about 2009, the technology to be employed is less clear. The leading candidate for the 2009 node is extreme ultraviolet (EUV) lithography, however this requires that several remaining challenges, including sufficient EUV source power, be overcome in a timely manner. This technology is based on multilayer coated reflective optics [2] and an EUV emitting plasma. Following Moore's Law [3] it is expected, for example, that at the 2009 `32 nm node' (printable patterns of 32 nm half-pitch), isolated lines with 18 nm width will be formed in resist (using threshold effects), and that these will be further narrowed to 13 nm in transfer to metalized electronic gates. These narrow features are expected to provide computer chips of 19 GHz clock frequency, with of the order of 1.5 billion transistors per chip [1]. This issue of Journal of Physics D: Applied Physics contains a cluster of eight papers addressing the critical

  4. Details in Semiconductors Gordon Conference, New London, NH, August 3-8, 2008

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Shengbai [Rensselaer Polytechnic Inst., Troy, NY (United States); Gray, Nancy Ryan [Gordon Research Conferences, West Kingston, RI (United States)

    2009-09-16

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in homogeneous and structured semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, with an increases emphasis on nanostructures as compared to previous conferences. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference deals with defects in a broad range of bulk and nanoscale electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and organic semiconductors. Presentations of state-of-the-art theoretical methods will contribute to a fundamental understanding of atomic-scale phenomena. The program consists of about twenty invited talks, with plenty of discussion time, and a number of contributed poster sessions. Because of the large amount of discussion time, the conference provides an ideal forum for dealing with topics that are new and/or controversial.

  5. 2014 International Conference on Manufacturing, Optimization, Industrial and Material Engineering

    Science.gov (United States)

    Lumban Gaol, Ford; Webb, Jeff; Ding, Jun

    2014-06-01

    The 2nd International Conference on Manufacturing, Optimization, Industrial and Material Engineering 2014 (MOIME 2014), was held at the Grand Mercure Harmoni, Opal Room 3rd Floor, Jakarta, Indonesia, during 29-30 March 2014. The MOIME 2014 conference is designed to bring together researchers, engineers and scientists in the domain of interest from around the world. MOIME 2014 is placed on promoting interaction between the theoretical, experimental, and applied communities, so that a high level exchange is achieved in new and emerging areas within Material Engineering, Industrial Engineering and all areas that relate to Optimization. We would like to express our sincere gratitude to all in the Technical Program Committee who have reviewed the papers and developed a very interesting Conference Program as well as the invited and plenary speakers. This year, we received 97 papers and after rigorous review, 24 papers were accepted. The participants come from 7 countries. There are 4 (four) parallel session and 2 Invited Speakers and one workshop. It is an honour to present this volume of IOP Conference Series: Materials Science and Engineering (MSE) and we deeply thank the authors for their enthusiastic and high-grade contributions. Finally, we would like to thank the conference chairmen, the members of the steering committee, the organizing committee, the organizing secretariat and the financial support from the conference sponsors that allowed the success of MOIME 2014. The Editors of the MOIME 2014 Proceedings Editors Dr Ford Lumban Gaol Jeff Webb, PhD Professor Jun Ding, PhD

  6. PREFACE: Trends in Aerospace Manufacturing 2009 International Conference

    Science.gov (United States)

    Ridgway, Keith; Gault, Rosemary; Allen, Adrian

    2011-12-01

    The aerospace industry is rapidly changing. New aircraft structures are being developed and aero-engines are becoming lighter and more environmentally friendly. In both areas, innovative materials and manufacturing methods are used in an attempt to get maximum performance for minimum cost. At the same time, the structure of the industry has changed and there has been a move from large companies designing, manufacturing components and assembling aircraft to one of large global supply chains headed by large system integrators. All these changes have forced engineers and managers to bring in innovations in design, materials, manufacturing technologies and supply chain management. In September 2009, the Advanced Manufacturing Research Centre (AMRC) at the University of Sheffield held the inaugural Trends in Aerospace Manufacturing conference (TRAM09). This brought together 28 speakers over two days, who presented in sessions on advanced manufacturing trends for the aerospace sector. Areas covered included new materials, including composites, advanced machining, state of the art additive manufacturing techniques, assembly and supply chain issues.

  7. Additive manufacturing approaches for stress relief in semiconductor die packaging

    NARCIS (Netherlands)

    Zon, C.M.B. van der; Wiel, A. van der; Maalderink, H.H.; Vaes, M.H.E.; Aulbers, A.P.; Vorst, L.T.G. van de; Cate, A.T. ten; Furrer, J.F.; Burssens, J.W.; Chen, J.

    2012-01-01

    Packaging of semiconductor chips, especially MEMS-based, always causes stress on the functional areas of the die causing unpredictable changes in chip performance. As a consequence such devices can only be calibrated individually after complete assembly. Melexis and TNO have developed an approach to

  8. Joint conference of iMEC 2015 (2nd International Manufacturing Engineering Conference & APCOMS 2015 (3rd Asia-Pacific Conference on Manufacturing Systems)

    Science.gov (United States)

    2016-02-01

    The iMEC 2015 is the second International Manufacturing Engineering Conference organized by the Faculty of Manufacturing, Universiti Malaysia Pahang (UMP), held from 12-14th November 2015 in Kuala Lumpur, Malaysia, with a theme "Materials, Manufacturing and Systems for Tomorrow". For the first time, iMEC is organized together with 3rd Asia- Pacific Conference on Manufacturing System (APCOMS 2015) which owned by Fakulti Teknologi Industri, Institut Teknologi Bandung (ITB), Indonesia. This is an extended collaboration between UMP and ITB to intensify knowledge sharing and experiences between higher learning institutions. This conference (iMEC & APCOMS 2015) is a platform for knowledge exchange and the growth of ideas, particularly in manufacturing engineering. The conference aims to bring researchers, academics, scientists, students, engineers and practitioners from around the world together to present their latest findings, ideas, developments and applications related to manufacturing engineering and other related research areas. With rapid advancements in manufacturing engineering, iMEC is an appropriate medium for the associated community to keep pace with the changes. In 2015, the conference theme is “Materials, Manufacturing and Systems for Tomorrow” which reflects the acceleration of knowledge and technology in global manufacturing. The papers in these proceedings are examples of the work presented at the conference. They represent the tip of the iceberg, as the conference attracted over 200 abstracts from Malaysia, Indonesia, Japan, United Kingdom, Australia, India, Bangladesh, South Africa, Turkey and Morocco and 151 full papers were accepted in these proceedings. The conference was run in four parallel sessions with 160 presenters sharing their latest finding in the areas of manufacturing process, systems, advanced materials and automation. The first keynote presentation was given by Prof. B. S. Murthy (IIT, Madras) on "Nanomaterials with Exceptional

  9. Joint conference of iMEC 2015 (2nd International Manufacturing Engineering Conference and APCOMS 2015 (3rd Asia-Pacific Conference on Manufacturing Systems)

    International Nuclear Information System (INIS)

    2016-01-01

    The iMEC 2015 is the second International Manufacturing Engineering Conference organized by the Faculty of Manufacturing, Universiti Malaysia Pahang (UMP), held from 12-14th November 2015 in Kuala Lumpur, Malaysia, with a theme 'Materials, Manufacturing and Systems for Tomorrow'. For the first time, iMEC is organized together with 3rd Asia- Pacific Conference on Manufacturing System (APCOMS 2015) which owned by Fakulti Teknologi Industri, Institut Teknologi Bandung (ITB), Indonesia. This is an extended collaboration between UMP and ITB to intensify knowledge sharing and experiences between higher learning institutions. This conference (iMEC and APCOMS 2015) is a platform for knowledge exchange and the growth of ideas, particularly in manufacturing engineering. The conference aims to bring researchers, academics, scientists, students, engineers and practitioners from around the world together to present their latest findings, ideas, developments and applications related to manufacturing engineering and other related research areas. With rapid advancements in manufacturing engineering, iMEC is an appropriate medium for the associated community to keep pace with the changes. In 2015, the conference theme is “Materials, Manufacturing and Systems for Tomorrow” which reflects the acceleration of knowledge and technology in global manufacturing. The papers in these proceedings are examples of the work presented at the conference. They represent the tip of the iceberg, as the conference attracted over 200 abstracts from Malaysia, Indonesia, Japan, United Kingdom, Australia, India, Bangladesh, South Africa, Turkey and Morocco and 151 full papers were accepted in these proceedings. The conference was run in four parallel sessions with 160 presenters sharing their latest finding in the areas of manufacturing process, systems, advanced materials and automation. The first keynote presentation was given by Prof. B. S. Murthy (IIT, Madras) on &apos

  10. A Process for the Manufacture of a Semiconductor Device

    NARCIS (Netherlands)

    Ishihara, R.; Van der Zwan, M.

    2013-01-01

    A method for the manufacture of at least part of a thin-film device is described wherein, said method comprise: forming one or more indentations in a substrate, preferably a plastic substrate, an indentation comprising sidewalls and a base; filling at least one of said one or more indentations with

  11. 16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

    Science.gov (United States)

    Suris, Robert A.; Vorobjev, Leonid E.; Firsov, Dmitry A.

    2015-01-01

    The 16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics was held on November 24 - 28 at St. Petersburg Polytechnic University. The program of the Conference included semiconductor technology, heterostructures with quantum wells and quantum dots, opto- and nanoelectronic devices, and new materials. A large number of participants with about 200 attendees from many regions of Russia provided a perfect platform for the valuable discussions between students and experienced scientists. The Conference included two invited talks given by a corresponding member of RAS P.S. Kopyev ("Nitrides: the 4th Nobel Prize on semiconductor heterostructures") and Dr. A.V. Ivanchik ("XXI century is the era of precision cosmology"). Students, graduate and postgraduate students presented their results on plenary and poster sessions. The total number of accepted papers published in Russian (the official conference language) was 92. Here we publish 18 of them in English. Like previous years, the participants were involved in the competition for the best report. Certificates and cash prizes were awarded to a number of participants for the presentations selected by the Program Committee. Two special E.F. Gross Prizes were given for the best presentations in semiconductor optics. Works with potential applications were recommended for participation in the following competition for support from the Russian Foundation for Assistance to Small Innovative Enterprises in Science and Technology. The Conference was supported by the Russian Foundation for Basic Research, the "Dynasty" foundation and the innovation company "ATC - Semiconductor Devices", St. Petersburg. The official Conference website is http://www.semicond.spbstu.ru/conf2014-eng.html

  12. Structure-property relations in engineered semiconductor nanomaterials (Conference Presentation)

    Science.gov (United States)

    Hollingsworth, Jennifer A.; Htoon, Han

    2016-09-01

    Particle-size or `quantum-confinement' effects have been used for decades to tune semiconductor opto-electronic properties. More recently, particle size control as the primary means for properties control has been succeeded by nanoscale hetero-structuring. In this case, the nanosized particle is modified to include internal, nanoscale interfaces, generally defined by compositional variations that induce additional changes to semiconductor properties. These changes can entail enhancements to the size-induced properties as well as unexpected or `emergent' behaviors. Common structural motifs include enveloping a spherical semiconductor nanocrystal, i.e., a quantum dot, within a shell of a different composition. In this talk, I will discuss how solution-phase synthesis can be used to create these structures with precisely `engineered' complexity. Most notably, I will review our experiences with so-called `giant' quantum dots that, due to their internal nanoscale structure, exhibit a range of novel behaviors, including being non-blinking and non-photobleaching (Chen et al. J. Am. Chem. Soc. 2008, 130, 5026; Ghosh et al. J. Am. Chem. Soc. 2012, 134, 9634; Dennis et al. Nano Lett. 2012 12, 5545; Acharya et al. J. Am. Chem. Soc. 2015, 137, 3755), and remarkably efficient emitters of `multi-excitons' due to extreme suppression of Auger recombination (Mangum et al. Nanoscale 2014, 6, 3712; Gao et al. Adv. Optical Mater. 2015, 3, 39). I will discuss recent work extending non-blinking behavior to the blue/green and "dual-color" emission, and show how correlated optical/structural characterization can reveal new information regarding structure-property relations to guide new nanomaterials development (Orfield et al. ACS Nano, Article ASAP).

  13. Preface: Special issue featuring papers from the International Conference on Nonequilibrium Carrier Dynamics in Semiconductors

    Science.gov (United States)

    Reggiani, L.; Bordone, P.; Brunetti, R.

    2004-02-01

    The International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13) celebrates 30 years since it first took place in Modena. Nonequilibrium dynamics of charge carriers, pioneered by the hot-electron concept, is an important issue for understanding electro-optic transport properties in semiconductor materials and structures. In these 30 years several topics have matured, and new ones have emerged thus fertilizing the field with a variety of physical problems and new ideas. The history of the conference is summarized in the opening paper `30 years of HCIS'. The future of the conference seems secure considering the continued lively interest of the participants. The conference addressed eleven major topics which constitute the backbone of the proceedings and are summarized as follows: carrier transport in low dimensional and nanostructure systems, nonequilibrium carriers in superlattices and devices, small devices and related phenomena, carrier dynamics and fluctuations, carrier quantum dynamics, coherent/incoherent carrier dynamics of optical excitations and ultra-fast optical phenomena, nonlinear optical effects, transport in organic matter, semiconductor-based spintronics, coherent dynamics in solid state systems for quantum processing and communication, novel materials and devices. Nanometric space scale and femtosecond time scale represent the ultimate domains of theoretical, experimental and practical interest. Traditional fields such as bulk properties, quantum transport, fluctuations and chaotic phenomena, etc, have received thorough and continuous attention. Emerging fields from previous conferences, such as quantum processing and communication, have been better assessed. New fields, such as spintronics and electron transport in organic matter, have appeared for the first time. One plenary talk, 11 invited talks, 230 submitted abstracts covering all these topics constituted a single-session conference. Following scientific selection

  14. A hybrid life cycle inventory of nano-scale semiconductor manufacturing.

    Science.gov (United States)

    Krishnan, Nikhil; Boyd, Sarah; Somani, Ajay; Raoux, Sebastien; Clark, Daniel; Dornfeld, David

    2008-04-15

    The manufacturing of modern semiconductor devices involves a complex set of nanoscale fabrication processes that are energy and resource intensive, and generate significant waste. It is important to understand and reduce the environmental impacts of semiconductor manufacturing because these devices are ubiquitous components in electronics. Furthermore, the fabrication processes used in the semiconductor industry are finding increasing application in other products, such as microelectromechanical systems (MEMS), flat panel displays, and photovoltaics. In this work we develop a library of typical gate-to-gate materials and energy requirements, as well as emissions associated with a complete set of fabrication process models used in manufacturing a modern microprocessor. In addition, we evaluate upstream energy requirements associated with chemicals and materials using both existing process life cycle assessment (LCA) databases and an economic input-output (EIO) model. The result is a comprehensive data set and methodology that may be used to estimate and improve the environmental performance of a broad range of electronics and other emerging applications that involve nano and micro fabrication.

  15. 4. International Conference on Application of Semiconductor Detectors in Nuclear Physical Problems. Abstracts

    International Nuclear Information System (INIS)

    1995-01-01

    This was the fourth successive conference on semiconductor detectors (SD) of nuclear radiations that were held in Jurmala by the Riga Research and Development Institute for Radioisotope apparatus - the leading producer in the former USSR of SDs and equipment that use those. This conference used to attract leading experts of the USSR in physics and detector technology, as well as in other various fields of science and technology that use equipment with SDs. The main aim of the conference was to get together specialists who use SDs, consider problems they face and define the trends in development of appliances with SDs. Abstracts of this conference is arranged in following parts: Scientific researches, Radionuclide analysis for control of environmental objects, X-ray fluorescence and neutron activation analysis, Nuclear energetics, Medicine and biology, Special aspects of SD devices design

  16. PREFACE: 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19)

    Science.gov (United States)

    González, T.; Martín-Martínez, M. J.; Mateos, J.

    2015-10-01

    The 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19) was held at the Hospedería Fonseca (Universidad de Salamanca, Spain), on 29 June - 2 July, 2015, and was organized by the Electronics Area from the University of Salamanca. The Conference is held biannually and covers the recent progress in the field of electron dynamics in solid-state materials and devices. This was the 19th meeting of the international conference series formerly named Hot Carriers in Semiconductors (HCIS), first held in Modena in 1973. In the edition of 1997 in Berlin the name of the conference changed to International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, keeping the same acronym, HCIS; and finally in the edition of Montpellier in 2009 the name was again changed to the current one, International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON). The latest editions took place in Santa Barbara, USA, in 2011 and Matsue, Japan, in 2013. Research work on electron dynamics involves quite different disciplines, and requires both fundamental and technological scientific efforts. Attendees to the conference come mostly from academic institutions, belonging to both theoretical and experimental groups working in a variety of fields, such as solid-state physics, electronics, optics, electrical engineering, material science, laser physics, etc. In this framework, events like the EDISON conference become a basic channel for the progress in the field. Here, researchers working in different areas can meet, present their latest advances and exchange their ideas. The program of EDISON'19 included 13 invited papers, 61 oral contributions and 73 posters. These contributions originated from scientists in more than 30 different countries. The Conference gathered 140 participants, coming from 24 different countries, most from Europe, but also with a significant participation

  17. Preface of 16th International conference on Defects, Recognition, Imaging and Physics in Semiconductors

    Science.gov (United States)

    Yang, Deren; Xu, Ke

    2016-11-01

    The 16th International conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-XVI) was held at the Worldhotel Grand Dushulake in Suzhou, China from 6th to 10th September 2015, around the 30th anniversary of the first DRIP conference. It was hosted by the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences. On this occasion, about one hundred participants from nineteen countries attended the event. And a wide range of subjects were addressed during the conference: physics of point and extended defects in semiconductors: origin, electrical, optical and magnetic properties of defects; diagnostics techniques of crystal growth and processing of semiconductor materials (in-situ and process control); device imaging and mapping to evaluate performance and reliability; defect analysis in degraded optoelectronic and electronic devices; imaging techniques and instruments (proximity probe, x-ray, electron beam, non-contact electrical, optical and thermal imaging techniques, etc.); new frontiers of atomic-scale-defect assessment (STM, AFM, SNOM, ballistic electron energy microscopy, TEM, etc.); new approaches for multi-physic-parameter characterization with Nano-scale space resolution. Within these subjects, there were 58 talks, of which 18 invited, and 50 posters.

  18. SETEC/Semiconductor Manufacturing Technologies Program: 1999 Annual and Final Report

    Energy Technology Data Exchange (ETDEWEB)

    MCBRAYER,JOHN D.

    2000-12-01

    This report summarizes the results of work conducted by the Semiconductor Manufacturing Technologies Program at Sandia National Laboratories (Sandia) during 1999. This work was performed by one working group: the Semiconductor Equipment Technology Center (SETEC). The group's projects included Numerical/Experimental Characterization of the Growth of Single-Crystal Calcium Fluoride (CaF{sub 2}); The Use of High-Resolution Transmission Electron Microscopy (HRTEM) Imaging for Certifying Critical-Dimension Reference Materials Fabricated with Silicon Micromachining; Assembly Test Chip for Flip Chip on Board; Plasma Mechanism Validation: Modeling and Experimentation; and Model-Based Reduction of Contamination in Gate-Quality Nitride Reactor. During 1999, all projects focused on meeting customer needs in a timely manner and ensuring that projects were aligned with the goals of the National Technology Roadmap for Semiconductors sponsored by the Semiconductor Industry Association and with Sandia's defense mission. This report also provides a short history of the Sandia/SEMATECH relationship and a brief on all projects completed during the seven years of the program.

  19. Product manufacturing, quality, and reliability initiatives to maintain a competitive advantage and meet customer expectations in the semiconductor industry

    Science.gov (United States)

    Capps, Gregory

    Semiconductor products are manufactured and consumed across the world. The semiconductor industry is constantly striving to manufacture products with greater performance, improved efficiency, less energy consumption, smaller feature sizes, thinner gate oxides, and faster speeds. Customers have pushed towards zero defects and require a more reliable, higher quality product than ever before. Manufacturers are required to improve yields, reduce operating costs, and increase revenue to maintain a competitive advantage. Opportunities exist for integrated circuit (IC) customers and manufacturers to work together and independently to reduce costs, eliminate waste, reduce defects, reduce warranty returns, and improve quality. This project focuses on electrical over-stress (EOS) and re-test okay (RTOK), two top failure return mechanisms, which both make great defect reduction opportunities in customer-manufacturer relationship. Proactive continuous improvement initiatives and methodologies are addressed with emphasis on product life cycle, manufacturing processes, test, statistical process control (SPC), industry best practices, customer education, and customer-manufacturer interaction.

  20. 2nd International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects

    CERN Document Server

    Graul, Jürgen

    1971-01-01

    In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos­ sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power­ ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori­ ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume c...

  1. Analytical chemistry in semiconductor manufacturing: Techniques, role of nuclear methods and need for quality control

    International Nuclear Information System (INIS)

    1989-06-01

    This report is the result of a consultants meeting held in Gaithersburg, USA, 2-3 October 1987. The meeting was hosted by the National Bureau of Standards and Technology, and it was attended by 18 participants from Denmark, Finland, India, Japan, Norway, People's Republic of China and the USA. The purpose of the meeting was to assess the present status of analytical chemistry in semiconductor manufacturing, the role of nuclear analytical methods and the need for internationally organized quality control of the chemical analysis. The report contains the three presentations in full and a summary report of the discussions. Thus, it gives an overview of the need of analytical chemistry in manufacturing of silicon based devices, the use of nuclear analytical methods, and discusses the need for quality control. Refs, figs and tabs

  2. An Assessment of Critical Dimension Small Angle X-ray Scattering Metrology for Advanced Semiconductor Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Settens, Charles M. [State Univ. of New York (SUNY), Albany, NY (United States)

    2015-01-01

    Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty. Synchrotron critical dimension small angle X-ray scattering (CD-SAXS) has unique capabilities to non-destructively monitor the cross-section shape of surface structures with single nanometer uncertainty and can perform overlay metrology to sub-nm uncertainty. In this dissertation, we perform a systematic experimental investigation using CD-SAXS metrology on a hierarchy of semiconductor 3D device architectures including, high-aspect-ratio contact holes, H2 annealed Si fins, and a series of grating type samples at multiple points along a FinFET fabrication process increasing in structural intricacy and ending with fully fabricated FinFET. Comparative studies between CD-SAXS metrology and other relevant semiconductor dimensional metrologies, particularly CDSEM, CD-AFM and TEM are used to determine physical limits of CD-SAXS approach for advanced semiconductor samples. CD-SAXS experimental tradeoffs, advice for model-dependent analysis and thoughts on the compatibility with a semiconductor manufacturing environment are discussed.

  3. Genetic Algorithm for Job Scheduling with Maintenance Consideration in Semiconductor Manufacturing Process

    Directory of Open Access Journals (Sweden)

    Seungchul Lee

    2012-01-01

    Full Text Available This paper presents wafer sequencing problems considering perceived chamber conditions and maintenance activities in a single cluster tool through the simulation-based optimization method. We develop optimization methods which would lead to the best wafer release policy in the chamber tool to maximize the overall yield of the wafers in semiconductor manufacturing system. Since chamber degradation will jeopardize wafer yields, chamber maintenance is taken into account for the wafer sequence decision-making process. Furthermore, genetic algorithm is modified for solving the scheduling problems in this paper. As results, it has been shown that job scheduling has to be managed based on the chamber degradation condition and maintenance activities to maximize overall wafer yield.

  4. Detection of electrical defects with SEMVision in semiconductor production mode manufacturing

    Science.gov (United States)

    Newell, Travis; Tillotson, Brock; Pearl, Haim; Miller, Andrei

    2016-03-01

    In the semiconductor manufacturing process, defects often occur due to a marginal process window that affects the lithography and etch processes. These defects can result in bridging patterns and overlay issues, which consequently cause electrical shorts and partially etched vias producing electrical opens. SEM tools are used to find electrical failures through voltage contrast techniques. Manufacturers who fabricate with older process technology nodes often need to use their tool set more efficiently. This paper demonstrates an application of conventional SEM review with image to golden reference image inspection capabilities in Automatic Process Inspection (API ) mode to perform electrical inspections of die features. This paper details how to use a SEM review tool to detect systematic electrical defects. This methodology can prove beneficial while monitoring and developing patterning techniques for a specific design rule by catching electrical shorts and opens that are more visible at a lower resolution inspection used in process monitoring. Outcomes of this effort show that conventional review SEM techniques, using known areas prone to process inconsistencies derived from features pushing the design rule, have the capability to effectively and efficiently monitor fabrication process while implemented in a production setting at process nodes between 100 to 200 nm. Using e-beam review tools offers several advantages and disadvantages. This paper demonstrates that by using a SEM review tool and selecting die locations for imaging that are more likely to fail electrically, manufacturers can use SEM automatic review capabilities more effectively and efficiently. The application developed may also be applied in fabrication facilities that have limited yield monitoring capacity. This paper is a result of collaboration between Applied Materials and Microchip Technology Inc.

  5. 5th International and 26th All India Manufacturing Technology, Design and Research Conference

    CERN Document Server

    Dixit, Uday

    2015-01-01

    This book presents selected research papers of the AIMTDR 2014 conference on application of laser technology for various manufacturing processes such as cutting, forming, welding, sintering, cladding and micro-machining. State-of-the-art of these technologies in terms of numerical modeling, experimental studies and industrial case studies are presented. This book will enrich the knowledge of budding technocrats, graduate students of mechanical and manufacturing engineering, and researchers working in this area.  

  6. 2nd International Conference on Mechanical, Manufacturing and Process Plant Engineering

    CERN Document Server

    2017-01-01

    This volume presents selected papers from the 2nd International Conference on Mechanical, Manufacturing and Process Plant Engineering (ICMMPE 2016) which was held from 23rd to 24th November, 2016 in Kuala Lumpur, Malaysia. The proceedings discuss genuine problems of joining technologies that are heart of manufacturing sectors. It discusses the findings of experimental and numerical works from soldering, arc welding to solid state joining technology that faced by current industry. .

  7. Feature analysis and classification of manufacturing signatures based on semiconductor wafermaps

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, K.W.; Gleason, S.S.; Karnowski, T.P. [Oak Ridge National Lab., TN (United States); Cohen, S.L. [SEMATECH, Austin, TX (United States)

    1997-02-01

    Automated tools for semiconductor wafer defect analysis are becoming more necessary as device densities and wafer sizes continue to increase. Trends towards larger wafer formats and smaller critical dimensions have caused an exponential increase in the volume of defect data which must be analyzed and stored. To accommodate these changing factors, automatic analysis tools are required that can efficiently and robustly process the increasing amounts of data, and thus quickly characterize manufacturing processes and accelerate yield learning. During the first year of this cooperative research project between SEMATECH and the Oak Ridge National Laboratory, a robust methodology for segmenting signature events prior to feature analysis and classification was developed. Based on the results of this segmentation procedure, a feature measurement strategy has been designed based on interviews with process engineers coupled with the analysis of approximately 1500 electronic wafermap files. In this paper, the authors represent an automated procedure to rank and select relevant features for use with a fuzzy pair-wise classifier and give examples of the efficacy of the approach taken. Results of the feature selection process are given for two uniquely different types of class data to demonstrate a general improvement in classifier performance.

  8. Risk for work-related fatigue among the employees on semiconductor manufacturing lines.

    Science.gov (United States)

    Lin, Yu-Cheng; Chen, Yen-Cheng; Hsieh, Hui-I; Chen, Pau-Chung

    2015-03-01

    To examine the potential risk factors for work-related fatigue (WRF) among workers in modern industries, the authors analyzed the records of need-for-recovery questionnaires and health checkup results for 1545 employees. Compared with regular daytime workers, and after adjusting for confounders, the workers adapting to day-and-night rotating shift work (RSW) had a 4.0-fold (95% confidence interval [CI] = 2.7-5.9) increased risk for WRF, higher than the 2.2-fold risk (95% CI = 1.5-3.3) for persistent shift workers. Based on highest education level, the male employees with university degrees had the highest adjusted odds ratio (a-OR) 2.8 (95% CI = 1.0-7.8) for complaining of WRF versus compulsory education group. For female workers, currently married/cohabiting status was inversely associated with WRF (a-OR = 0.5; 95% CI = 0.2-0.9), and child-rearing responsibility moderately increased WRF risk (a-OR = 1.9; 95% CI = 1.0-3.7). Day-and-night RSW and the adaptation, educational levels of males, and domestic factors for females contributed to WRF among semiconductor manufacturing employees. © 2013 APJPH.

  9. PREFACE: 3rd International Conference on Manufacturing, Optimization, Industrial and Material Engineering (MOIME 2015)

    Science.gov (United States)

    Lumban Gaol, Ford; Webb, Jeff; Ding, Jun

    2015-05-01

    The 3rd International Conference on Manufacturing, Optimization, Industrial and Material Engineering (MOIME 2015) was held at the Sheraton Kuta, Bali, Indonesia, from 28 - 29 March 2015. The MOIME 2015 conference is aimed to bring together researchers, engineers and scientists in the domain of interest from around the world. MOIME 2015 is placed on promoting interaction between the theoretical, experimental, and applied communities, so that a high level exchange is achieved in new and emerging areas within Material Engineering, Industrial Engineering and all areas that relate to Optimization. We would like to express our sincere gratitude to all in the Technical Program Committee who have reviewed the papers and developed a very interesting Conference Program, as well as the invited and plenary speakers. This year, we received 99 papers and after rigorous review, 24 papers were accepted. The participants come from eight countries. There were four parallel sessions and two invited speakers. It is an honour to present this volume of IOP Conference Series: Materials Science and Engineering (MSE) and we deeply thank the authors for their enthusiastic and high-grade contributions. Finally, we would like to thank the conference chairmen, the members of the steering committee, the organizing committee, the organizing secretariat and the financial support from the conference sponsors that allowed the success of MOIME 2015. The Editors of the MOIME 2015 Proceedings Dr. Ford Lumban Gaol Jeff Webb, Ph.D Prof. Jun DING, Ph.D

  10. PREFACE: 2013 International Conference on Manufacturing, Optimization, Industrial and Material Engineering (MOIME 2013)

    Science.gov (United States)

    Lumban Gaol, Ford; Rizwan Hussain, Raja; Pandiangan, Tumpal; Desai, Amit

    2013-06-01

    Banner The 2013 International Conference on Manufacturing, Optimization, Industrial and Material Engineering (MOIME 2013), was held at the Grand Royal Panghegar Hotel, Bandung, Indonesia, from 9-10 March 2013. The MOIME 2013 conference brought together researchers, engineers and scientists in the field from around the world. MOIME 2013 aimed to promote interaction between the theoretical, experimental, and applied communities, so that a high level exchange was achieved in new and emerging areas within Material Engineering, Industrial Engineering and all areas that related to Optimization. We would like to express our sincere gratitude to all in the Technical Program Committee who reviewed the papers and developed a very interesting Conference Program as well as the invited and plenary speakers. This year, we received 103 papers and after rigorous review, 45 papers were accepted. The participants came from 16 countries. There were six Plenary and Invited Speakers. It is an honour to present this volume of IOP Conference Series: Materials Science and Engineering (MSE) and we deeply thank the authors for their enthusiastic and high-grade contribution. Finally, we would like to thank the conference chairmen, the members of the steering committee, the organizing committee, the organizing secretariat and the conference sponsors for the financial support that contributed to the success of MOIME 2013. The Editors of the MOIME 2013 Dr Ford Lumban Gaol Dr Raja Rizwan Hussain Tumpal Pandiangan Dr Amit Desai The PDF contains the abstracts from the plenary and invited articles and the workshop.

  11. Manufacture of ribbon and solar cells of material of semiconductor grade

    International Nuclear Information System (INIS)

    1980-01-01

    A method is described of producing ribbon-like substantially monocrystalline bodies of silicon or other materials of semiconductor grade suitable for use in solar cells or other semiconductor devices. A tube of the material is made and a photovoltaic junction formed in it. The tube is then divided lengthwise into a number of ribbon-like bodies. The photovoltaic junction can be formed either by diffusion or by ion-implantation. (U.K.)

  12. Decision Making for Third Party Logistics Supplier Selection in Semiconductor Manufacturing Industry: A Nonadditive Fuzzy Integral Approach

    Directory of Open Access Journals (Sweden)

    Bang-Ning Hwang

    2015-01-01

    Full Text Available The semiconductor industry has a unique vertically disintegrated structure that consists of various firms specializing in a narrow range of the value chain. To ensure manufacturing and logistics efficiency, the semiconductor manufacturers considerably rely on 3PL suppliers to achieve supply chain excellence. However, 3PL supplier selection is a complex decision-making process involving multiple selection criteria. The goal of this paper is to identify the key 3PL selection criteria by employing the nonadditive fuzzy integral approach. Unlike the traditional multicriterion decision-making (MCDM methods which often assume independence among criteria and additive importance weights, the nonadditive fuzzy integral is a more effective approach to solve the dependency among criteria, vagueness in information, and essential fuzziness of human judgment. In this paper, we demonstrate an empirical case that employs the nonadditive fuzzy integral to evaluate the importance weight of selection criteria and choose the most appropriate 3PL supplier. The research result can become a valuable reference for manufacturing companies operating in comparable situations. Moreover, the systematic framework presented in this study can be easily extended to the analysis of other decision-making domains.

  13. 2012 Gordon Research Conference on Defects in Semiconductors - Formal Schedule and Speaker/Poster Program

    Energy Technology Data Exchange (ETDEWEB)

    Glaser, Evan [Naval Research Lab. (NRL), Washington, DC (United States)

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  14. Feature scale modeling for etching and deposition processes in semiconductor manufacturing

    International Nuclear Information System (INIS)

    Pyka, W.

    2000-04-01

    Simulation of etching and deposition processes as well as three-dimensional geometry generation are important issues in state of the art TCAD applications. Three-dimensional effects are gaining importance for semiconductor devices and for their interconnects. Therefore a strictly physically based simulation of their topography is required. Accurate investigation of single etching and deposition processes has become equally important as process integration. Within this context several aspects of three-dimensional topography simulation have been covered by this thesis and new and interesting results have been achieved in various areas. The algorithmic core of the cell-based structuring element surface propagation method has been optimized and has been eliminated from its position as factor which predominantly determines the required CPU time. In parallel with investigated optimization techniques and required by various process models, the implementation of the surface normal calculation and the special handling of voids and unconnected parts of the geometry has been completed in three dimensions. A process-step-based solid modeling tool which incorporates layout data as well as aerial image simulation has been supplied. It can be coupled with the topography simulation and includes simple geometrically based models for CMP and oxidation. In the presented combination, the tool makes use of the design information stored in the layout file, combines it with the manufacturing recipe, and hence is extremely helpful for the automatic generation of three-dimensional structures. Its usefulness has been proven with several interconnect examples. Regarding topography models, resist development not only turned out to be very helpful for predicting exposed and etched resist profiles within a rigorous lithography simulation, but, by means of benchmark examples, also demonstrated the extraordinary stability of the proposed cellular surface movement algorithm. With respect to

  15. Solution manufacturing of 2D piezoelectric semiconductors for smart wearable devices

    Science.gov (United States)

    Wang, Yixiu; Qiu, Gang; Ye, Peide; Wu, Wenzhuo

    Due to two-dimensional (2D) nanomaterials, such as graphene and transition metal dichalcogenide (TMD) nanosheets, with single- or few-layer thickness have shown some extraordinary properties in contrast to their bulk counter parts. For example, some of the 2D nanomaterials exhibit layer-dependent bandgap. Besides, the high flexibility, ultrahigh surface area and good mechanical strength make them promising for electronics/optoelectronics and sensors. Here, we report a low-temperature, solution-based method to produce a new class of 2D piezoelectric semiconductors with controlled thickness and lateral dimensions at large scale. Such material shows non-centrosymmetric crystal structure, which enable us to not only explore its basic piezoelectric and semiconductor properties but also its application in wearable devices.

  16. PREFACE: 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology (HMF-19)

    Science.gov (United States)

    Muraki, Koji; Takeyama, Shojiro

    2011-12-01

    This volume contains invited and contributed papers from the 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology (HMF-19) held in Fukuoka, Japan, from 1-6 August 2010. This conference was mainly sponsored by the Tokyo University-'Horiba International fund', which was donated by Dr Masao Horiba, the founder of Horiba Ltd. The scientific program of HMF-19 consisted of 37 invited talks, 24 contributed talks, and 83 posters, which is available from the conference homepage http://www.hmf19.iis.u-tokyo.ac.jp/index.html. Each manuscript submitted for publication in this volume has been independently reviewed. The Editor is very grateful to all the reviewers for their quick responses and helpful reports and to all the authors for their submissions and patience for the delay in the editorial process. Finally, the Editor would like to express his sincere gratitude to all the individuals involved in the conference organization and all the attendees, who made this conference so successful. Koji Muraki Conference photograph Committees Chair Conference chairS Takeyama(ISSP-UT) Conference secretary T Machida (IIS-UT) Program chair K Muraki (NTT) Local organizing chair K Oto (Chiba Univ.) Advisory Committee International Domestic L Brey (ES) T Ando (TIT) Z H Chen (CN) Y Hirayama (Tohoku Univ.) S Das Sarma (US) G Kido (NIMS) L Eaves (GB) N Miura (JP) J P Eisenstein (US) J Nitta (Tohoku Univ.) K Ensslin (CH) T Takamasu (NIMS) J Furdyna (US) G M Gusev (BR) I Kukushkin (RU) Z D Kvon (RU) G Landwehr (DE) J C Maan (NL) A H MacDonald (US) N F Oliveira Jr (BR) A Pinczuk (US) J C Portal (FR) A Sachrajda (CA) M K Sanyal(IN) R Stepniewski(PL) Program Committee Chair: K Muraki(NTT) International Domestic G Bauer (AU) H Ajiki (Osaka Univ.) G Boebinger (US) H Aoki (Hongo, UT) S Ivanov (RU) K Nomura (RIKEN) K von Klitzing (DE) T Okamoto (Hongo, UT) R Nicholas (GB) T Osada (ISSP-UT ) M Potemski (FR) N Studart (BR) U Zeitler (NL

  17. Rare earth doped III-nitride semiconductors for spintronic and optoelectronic applications (Conference Presentation)

    Science.gov (United States)

    Palai, Ratnakar

    2016-10-01

    Since last four decades the information and communication technologies are relying on the semiconductor materials. Currently a great deal of attention is being focused on adding spin degree-of-freedom into semiconductor to create a new area of solid-state electronics, called spintronics. In spintronics not only the current but also its spin state is controlled. Such materials need to be good semiconductors for easy integration in typical integrated circuits with high sensitivity to the spin orientation, especially room temperature ferromagnetism being an important desirable property. GaN is considered to be the most important semiconductor after silicon. It is widely used for the production of green, blue, UV, and white LEDs in full color displays, traffic lights, automotive lightings, and general room lighting using white LEDs. GaN-based systems also show promise for microwave and high power electronics intended for radar, satellite, wireless base stations and spintronic applications. Rare earth (Yb, Eu, Er, and Tm) doped GaN shows many interesting optoelectronic and magnetoptic properties e. g. sharp emission from UV through visible to IR, radiation hardness, and ferromagnetism. The talk will be focused on fabrication, optoelectronic (photoluminescence, cathodeluminescence, magnetic, and x-ray photoelectron spectroscopy) properties of some rare earth doped GaN and InGaN semiconductor nanostructures grown by plasma assisted molecular beam epitaxy (MBE) and future applications.

  18. Application of Modern Signal Processing to Semiconductor Manufacturing and Phase Mask Design

    National Research Council Canada - National Science Library

    Kailath, Thomas

    1997-01-01

    .... Typically, the level of control chosen depends upon the actuation and sensing available. Rapid Thermal (RTP) is one step of the manufacturing cycle requiring precise temperature control and hence real-time feedback control...

  19. Selected Contributions of the 4th International Conference on Semiconductor Photochemistry (5P4) Introduction.

    Czech Academy of Sciences Publication Activity Database

    Krýsa, J.; Klusoň, Petr; Malato, S.

    2014-01-01

    Roč. 230, JUL 2014 (2014), s. 1 ISSN 0920-5861 Grant - others:SMEC(ES) CTQ2012-38754-C03-01 Institutional support: RVO:67985858 Keywords : semiconductor photochemistry * catalysis * scientific applications Subject RIV: CC - Organic Chemistry OBOR OECD: Organic chemistry Impact factor: 3.893, year: 2014

  20. Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

    Science.gov (United States)

    Crowell, Paul A.; Liu, Changjiang; Patel, Sahil; Peterson, Tim; Geppert, Chad C.; Christie, Kevin; Stecklein, Gordon; Palmstrøm, Chris J.

    2016-10-01

    A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (C. Liu, S. J. Patel, T. A. Peterson, C. C. Geppert, K. D. Christie, C. J. Palmstrøm, and P. A. Crowell, "Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance," Nature Communications 7, 10296 (2016). http://dx.doi.org/10.1038/ncomms10296

  1. The Impact of Polyvinylpyrrolidone on Properties of Cadmium Oxide Semiconductor Nanoparticles Manufactured by Heat Treatment Technique

    Directory of Open Access Journals (Sweden)

    Naif Mohammed Al-Hada

    2016-04-01

    Full Text Available Cadmium oxide semiconductor nanoparticles were produced using a water based mixture, incorporating cadmium nitrates, polyvinyl pyrrolidone (PVP, and calcination temperature. An X-ray diffraction (XRD evaluation was conducted to determine the degree of crystallization of the semiconductor nanoparticles. In addition, scanning electron microscopy (SEM was conducted to identify the morphological features of the nanoparticles. The typical particle sizes and particle dispersal were analyzed via the use of transmission electron microscopy (TEM. The findings provided further support for the XRD outcomes. To determine the composition phase, Fourier transform infrared spectroscopy (FT-IR was conducted, as it indicated the existence of not only metal oxide ionic band in the selection of samples, but also the efficient removal of organic compounds following calcinations. The optical characteristics were demonstrated, so as to analyze the energy band gap via the use of a UV–Vis spectrophotometer. A reduced particle size resulted in diminution of the intensity of photoluminescence, was demonstrated by PL spectra. Plus, the magnetic characteristics were examined using an electron spin resonance (ESR spectroscopy, which affirmed the existence of unpaired electrons.

  2. Enabling Manufacturing Competitiveness and Economic Sustainability : Proceedings of the 4th International Conference on Changeable, Agile, Reconfigurable and Virtual production

    CERN Document Server

    2012-01-01

    The changing manufacturing environment requires more responsive and adaptable manufacturing systems. The theme of the 4th International Conference on Changeable, Agile, Reconfigurable and Virtual production (CARV2011) is “Enabling Manufacturing Competitiveness and Economic Sustainability”. Leading edge research and best implementation practices and experiences, which address these important issues and challenges, are presented. The proceedings include advances in manufacturing systems design, planning, evaluation, control and evolving paradigms such as mass customization, personalization, changeability, re-configurability and flexibility. New and important concepts such as the dynamic product families and platforms, co-evolution of products and systems, and methods for enhancing manufacturing systems’ economic sustainability and prolonging their life to produce more than one product generation are treated. Enablers of change in manufacturing systems, production volume and capability scalability and man...

  3. Disruptive Innovation in Manufacturing Engineering towards the 4th Industrial Revolution: 8th International Conference on Digital Enterprise Technology

    OpenAIRE

    Constantinescu, Carmen; Bauer, Wilhelm; Sauer, Olaf; Maropoulos, Paul

    2014-01-01

    The CIRP sponsored DET 2014 conference focusses on the employment of modern ICT-technologies and tools for the modeling, simulation, optimization, advanced control and monitoring, real-time visualization of products, factories and manufacturing processes. The addressed areas cover all phases of product, factory and manufacturing processes life cycle starting with product design and development, engineering of factories, machines, equipment and technical processes, commissioning and rump-up, f...

  4. Energy Harvesting Thermoelectric Generators Manufactured Using the Complementary Metal Oxide Semiconductor Process

    Directory of Open Access Journals (Sweden)

    Wen-Jung Tsai

    2013-02-01

    Full Text Available This paper presents the fabrication and characterization of energy harvesting thermoelectric micro generators using the commercial complementary metal oxide semiconductor (CMOS process. The micro generator consists of 33 thermocouples in series. Thermocouple materials are p-type and n-type polysilicon since they have a large Seebeck coefficient difference. The output power of the micro generator depends on the temperature difference in the hot and cold parts of the thermocouples. In order to increase this temperature difference, the hot part of the thermocouples is suspended to reduce heat-sinking. The micro generator needs a post-CMOS process to release the suspended structures of hot part, which the post-process includes an anisotropic dry etching to etch the sacrificial oxide layer and an isotropic dry etching to remove the silicon substrate. Experiments show that the output power of the micro generator is 9.4 mW at a temperature difference of 15 K.

  5. Tuning the crystal polymorphs of organic semiconductor towards high performance organic transistors (Conference Presentation)

    Science.gov (United States)

    Zhen, Yonggang; He, Ping; Yi, Yuanping; Hu, Wenping

    2016-11-01

    Generally, the differences in crystal polymorph exhibit different narrow band structures, electron-phonon coupling, optoelectronic characteristics and charge transport properties, thus leading to different device performances of organic semiconductors for application in organic field-effect transistors (OFETs). Nowadays it still remains a big challenge to control organic crystal polymorph because the slight non-directional intermolecular interactions lead to the very small differences instructure and energy of cystal phases with several alternative packing arrangements. Therefore, the control of the crystal polymorphism towards high device performance has become a crucial issue in the field of organic semiconductors. Thienoacenes have been intensively investigated as very promising organic semiconductors with high stability and superior mobility for OFETs in the last decade. However, scare studies focused on the crystal polymorph of thienoacenes. Herein, we report the controllable growth of different crystal phases of dihexyl-substituted dibenzo[d,d']thieno[3,2-b;4,5-b']dithiophene (C6-DBTDT), which was synthesized in a new, facile and efficient method. Furthermore, OFETs based on microribbon-shaped β phase crystals showed the hole mobility up to 18.9 cm2 V-1 s-1, which is one of the highest value for p-type organic semiconductors measured under ambient conditions, while platelet-shaped α phase crystals displayed the lower hole mobility of 8.5 cm2 V-1 s-1. We clearly demonstrated that the selective growth of different crystal polymorph for C6-DBTDT can be achieved by using different substrate and solvents. The simple drop-cast fabrication with controllable crystal phase and air operation stability would open the possibility of thienoacene derivatives in the construction of micro- and nanoelectronics.

  6. Application and simulation of low temperature plasma processes in semiconductor manufacturing

    Science.gov (United States)

    Ventzek, P. L. G.; Rauf, S.; Stout, P. J.; Zhang, D.; Dauksher, W.; Hall, E.

    2002-05-01

    Integrated plasma equipment and feature scale models quantitatively describe broad classes of plasma process behavior. Metallization process models are the classic examples. This paper describes how multidimensional fundamentals-based models can be developed on diagnostics-friendly experimental tools and extended to commercial tools for applications with good confidence. First, the structure of integrated models used for the work described in this paper is discussed. This is followed by a description of the methodology employed in integrated model development. In addition to a metallization example, it is shown how complex dielectric etch models may be developed on the GEC reference cell and extended to commercial etchers with different yet similar physics. Plasma-surface interaction mechanisms may be required to be fine-tuned on actual tools with actual process material in order to capture the finesse in profile evolution when using a parameter space typical of a given manufacturing platform. Other examples described will be metallization pre-cleans, photoresist etch and a non-CMOS manufacturing example, deep Si etch for electron beam lithography mask making applications. Challenges to developing and applying integrated models are also discussed focusing on limitations in the ability to handle magnetized plasmas, electronegative plasmas, realistic external circuits and stiff numerics associated with describing plasmas over the disparate time and length scales that need to be handled.

  7. Ultrafast charge and energy exchanges at hybrid interfaces involving 2D semiconductors (Conference Presentation)

    Science.gov (United States)

    Boulesbaa, Abdelaziz; Wang, Kai; Babicheva, Viktoriia E.; Kravchenko, Ivan I.; Lin, Ming-Wei; Mahjouri-Samani, Masoud; Tian, Mengkun; Puretzky, Alexander A.; Ivanov, Ilia N.; Rouleau, Christopher M.; Sumpter, Bobby G.; Geohegan, David B.

    2017-02-01

    Two-dimensional transition metal dichalcogenide (2D-TMD) semiconductors are new class of functional materials with a great promise for optoelectronics. Despite their atomic thickness, they strongly interact with light. This allows 2D-TMDs to become suitable converters of photons into useful electric charges in heterostructures involving 2D-TMDs and metallic nano-plasmonics or semiconductor quantum dots (QDs). In this talk, I will illustrate how femtosecond pump-probe spectroscopy can reveal a sub-45 fs charge transfer at a 2D/QDs heterostructure composed of tungsten disulfide monolayers (2D-WS2) and a single layer of cadmium selenide (CdSe)/zinc sulfide (ZnS) core/shell 0D-QDs. In another heterostructure involving 2D-TMDs and plasmonics, I will describe how plasmons of an array of aluminum (Al) nanoantennas are excited indirectly via energy transfer from photoexcited exciton of 2D-WS2 semiconductor. In particular, femtosecond spectroscopy measurements indicated that the lifetime of the resulting plasmon-induced hot electrons in the Al array continue as long as that of the 2D-WS2 excitons. Conversely, the presence of these excited plasmons almost triples the lifetime of the 2D-WS2 excitons from 15 to 44 ps. This exciton-plasmon coupling enabled by such hybrid nanostructures may open new opportunities for optoelectronic applications. This research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. Synthesis of the two-dimensional materials was supported by the Materials Science and Engineering Division, Office of Basic Energy Sciences, U.S. Department of Energy.

  8. 75 FR 38129 - Freescale Semiconductor, Inc., Hardware/Software Design and Manufacturing A Including On-Site...

    Science.gov (United States)

    2010-07-01

    ... DEPARTMENT OF LABOR Employment and Training Administration [TA-W-72,689] Freescale Semiconductor..., 2010, applicable to workers of Freescale Semiconductor, Inc., Hardware/Software Design and... subject firm. The workers are engaged in employment related to the production of semiconductors. The...

  9. Proceedings of Republic conference (with participation of scientists from Commonwealth of Independent States countries) 'Modern problems of semiconductor physics', dedicated for twentieth anniversary of independence of Republic Uzbekistan

    International Nuclear Information System (INIS)

    Matchanov, A.T.; Tagaev, M.B.; Ismaylov, K.A.

    2011-11-01

    Republic conference with participation of scientists from Commonwealth of Independent States countries 'Modern problems of semiconductor physics', dedicated for twentieth anniversary of independence of Republic Uzbekistan was held on 23-25 November, 2011 in Nukus, Uzbekistan. Specialists and young scientists from universities and academic research institutes discussed various aspects of modern problems of semiconductor physics. More than 100 talks were presented in the meeting on the following subjects: solid state physics, physics of condensed matter and nano materials; educational tools and information technologies. (K.M.)

  10. Application of Neutron Measurements to Advance Semiconductor Manufacturing: Next-Generation Lithography and Nanoporous Thin Films

    Science.gov (United States)

    Lin, Eric

    2010-03-01

    As feature sizes in microelectronic devices continue to decrease to sub-32 nm dimensions, new measurement methods are needed to understand the physical phenomena used in state-of-the-art lithography methods that may limit their fabrication and probe the structure and properties of new electronics materials. Neutron (and x-ray) beams have emerged as powerful probes of new manufactured structures with characteristic length scales ranging from (1 to 100) nm in thin films and in the bulk. In particular, X-ray reflectivity (XR), neutron reflectivity (NR), small angle neutron scattering (SANS), and small angle X-ray scattering (SAXS) can be applied in novel ways to address fundamental issues important to the microelectronics industry. This talk with highlight the application of neutron and x-ray measurement methods to investigate important problems in the development of photoresist materials used in lithography and of nanoporous low-dielectric-constant materials needed for next generation integrated circuits. Specific topics include: 1) the direct measurement of the reaction-diffusion front with nanometer resolution from ideal line-edges to probe image blur and roughness from photoacid diffusion 2) identification and measurement of a ``residual swelling fraction'' during the development and 3) measurements of the pore structure of low-dielectric constant thin films. Insights from these studies can provide guidelines and opportunities for the further extension of photoresist technology into the future and the integration of new materials into integrated circuits.

  11. Solving partial differential equations on irregular domains with moving interfaces, with applications to superconformal electrodeposition in semiconductor manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Sethian, J.A.; Shan, Y.

    2007-12-10

    We present a numerical algorithm for solving partial differential equations on irregular domains with moving interfaces. Instead of the typical approach of solving in a larger rectangular domain, our approach performs most calculations only in the desired domain. To do so efficiently, we have developed a one-sided multigrid method to solve the corresponding large sparse linear systems. Our focus is on the simulation of the electrodeposition process in semiconductor manufacturing in both two and three dimensions. Our goal is to track the position of the interface between the metal and the electrolyte as the features are filled and to determine which initial configurations and physical parameters lead to superfilling. We begin by motivating the set of equations which model the electrodeposition process. Building on existing models for superconformal electrodeposition, we develop a model which naturally arises from a conservation law form of surface additive evolution. We then introduce several numerical algorithms, including a conservative material transport level set method and our multigrid method for one-sided diffusion equations. We then analyze the accuracy of our numerical methods. Finally, we compare our result with experiment over a wide range of physical parameters.

  12. Comparative analysis of redox and inflammatory properties of pristine nanomaterials and commonly used semiconductor manufacturing nano-abrasives.

    Science.gov (United States)

    Flaherty, Nicole L; Chandrasekaran, Akshaya; del Pilar Sosa Peña, Maria; Roth, Gary A; Brenner, Sara A; Begley, Thomas J; Melendez, J Andrés

    2015-12-15

    Continued expansion of the nanotechnology industry has necessitated the self-assessment of manufacturing processes, specifically in regards to understanding the health related aspects following exposure to nanomaterials. There exists a growing concern over potential occupational exposure in the semiconductor industry where Al2O3, CeO2 and SiO2 nanoparticles are commonly featured as part of the chemical mechanical planarization (CMP) process. Chronic exposure to toxicants can result not only in acute cytotoxicity but also initiation of a chronic inflammatory state associated with diverse pathologies. In the current investigation, pristine nanoparticles and CMP slurry formulations of Al2O3, SiO2 and CeO2 were employed to assess their ability to induce cytotoxicity, inflammatory responses and reactive oxygen species in a mouse alveolar macrophage cell model. The pristine nanoparticles and slurries were not intrinsically cytotoxic and did not generate free radicals but were found to act as scavengers in the presence of an oxidant stimulant. Al2O3 and SiO2 nanoparticles increased levels of pro-inflammatory cytokines while pristine SiO2 nanoparticles induced generation of F2-Isoprostanes. In co-treatment studies, the pristine nanomaterials modulated the response to the inflammatory stimulant lipopolysaccharide. The studies have established that pristine nanoparticles and slurries do not impact the cells in a similar way indicating that they should not be used as slurry substitutes in toxicity evaluations. Further, we have defined how an alveolar cell line, which would likely be the first challenged upon nanomaterial aerosolization, responds to diverse mixtures of nanomaterials. Moreover, our findings reinforce the importance of using multiple analytic methods to define the redox state of the cell following exposure to commonly used industrial nanomaterials and toxicants. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

  13. 5th International and 26th All India Manufacturing Technology, Design and Research Conference

    CERN Document Server

    Dixit, Uday

    2015-01-01

    This edited book contains extended research papers from AIMTDR 2014. This includes recent research work in the fields of friction stir welding, sheet forming, joining and forming, modeling and simulation, efficient prediction strategies, micro-manufacturing, sustainable and green manufacturing issues etc. This will prove useful to students, researchers, and practitioners in the field of materials forming and manufacturing.

  14. Argonne's performance assessment of major facility systems to support semiconductor manufacturing by the National Security Agency/R Group, Ft. Meade, Maryland

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, W.; Miller, G.M.

    1990-12-01

    The National Security Agency (NSA) was authorized in 1983 to construct a semiconductor and circuit-board manufacturing plant at its Ft. Meade, Maryland, facility. This facility was to become known as the Special Process Laboratories (SPL) building. Phase I construction was managed by the US Army Corps of Engineers, Baltimore District (USACE/BD) and commenced in January 1986. Phase I construction provided the basic building and support systems, such as the heating, ventilating, and air-conditioning system, the deionized-water and wastewater-treatment systems, and the high-purity-gas piping system. Phase II construction involved fitting the semiconductor manufacturing side of the building with manufacturing tools and enhancing various aspects of the Phase I construction. Phase II construction was managed by NSA and commenced in April 1989. Argonne National Laboratory (ANL) was contracted by USACE/BD midway through the Phase I construction period to provide quality-assured performance reviews of major facility systems in the SPL. Following completion of the Phase I construction, ANL continued its performance reviews under NSA sponsorship, focusing its attention on the enhancements to the various manufacturing support systems of interest. The purpose of this document is to provide a guide to the files that were generated by ANL during its term of technical assistance to USACE/BD and NSA and to explain the quality assurance program that was implemented when ANL conducted its performance reviews of the SPL building's systems. One set of the ANL project files is located at NSA, Ft. Meade, and two sets are at Argonne, Illinois. The ANL sets will be maintained until the year 2000, or for the 10-year estimated life of the project. 1 fig.

  15. 77 FR 69634 - International Conference on Harmonisation; Guidance on Q11 Development and Manufacture of Drug...

    Science.gov (United States)

    2012-11-20

    ... six ICH sponsors are the European Commission; the European Federation of Pharmaceutical Industries... Pharmaceutical Research and Manufacturers of America. The ICH Secretariat, which coordinates the preparation of... years, many important initiatives have been undertaken by regulatory authorities and industry...

  16. 76 FR 38187 - International Conference on Harmonisation; Draft Guidance on Q11 Development and Manufacture of...

    Science.gov (United States)

    2011-06-29

    ... Pharmaceutical Industries Associations; the Japanese Ministry of Health, Labour, and Welfare; the Japanese... and Research, FDA; and the Pharmaceutical Research and Manufacturers of America. The ICH Secretariat... regulatory authorities and industry associations to promote international harmonization of regulatory...

  17. 77 FR 64462 - Conference on International Trade Issues Facing U.S. Machinery Manufacturing Industries

    Science.gov (United States)

    2012-10-22

    ... market access. DATES: Tuesday, December 4, 2012. ADDRESSES: International Trade Administration, U.S... expanding international markets across the broad range of U.S. machinery exports. OTM will hold a one- day... DEPARTMENT OF COMMERCE Conference on International Trade Issues Facing U.S. Machinery...

  18. Disruptive Innovation in Manufacturing Engineering towards the 4th Industrial Revolution: 8th International Conference on Digital Enterprise Technology, DET 2014, March 25 -28 2014, Stuttgart, Germany, Abstracts

    OpenAIRE

    Bauer, Wilhelm; Constantinescu, Carmen; Sauer, Olaf; Maropoulos, Paul; Muelaner, Jody

    2014-01-01

    The CIRP sponsored DET 2014 conference focusses on the employment of modern ICT-technologies and tools for the modeling, simulation, optimization, advanced control and monitoring, real-time visualization of products, factories and manufacturing processes. The addressed areas cover all phases of product, factory and manufacturing processes life cycle starting with product design and development, engineering of factories, machines, equipment and technical processes, commissioning and rump-up, f...

  19. Fiscal 1998 research achievement report. Development of key technology for high-efficiency semiconductor manufacturing process; 1998 nendo kokoritsu handotai seizo process kiban gijutsu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-05-01

    In the development of large-aperture/high-density plasma technology, research and development was carried out for balanced electron drift plasma technologies for uniform control of plasma density and the like, such as an excited plasma source and plasma drift to enable wide-range plasma generation in a chamber. In the development of high-efficiency exposure technology, studies were made for stable generation and control of short wavelength excimer laser and for higher-speed large-aperture mask writing by use of an electron beam. In the development of higher-speed processing and energy-efficient technologies, research and development was conducted involving probe card technology for increasing the speed of semiconductor inspection, software-aided virtual tester technology, local energy-efficient cleaning technology in wafer processing and transportation, sheet-type flexible manufacturing system, and the like. (NEDO)

  20. Prospects and fundamental limitations of room temperature, non-avalanche, semiconductor photon-counting sensors (Conference Presentation)

    Science.gov (United States)

    Ma, Jiaju; Zhang, Yang; Wang, Xiaoxin; Ying, Lei; Masoodian, Saleh; Wang, Zhiyuan; Starkey, Dakota A.; Deng, Wei; Kumar, Rahul; Wu, Yang; Ghetmiri, Seyed Amir; Yu, Zongfu; Yu, Shui-Qing; Salamo, Gregory J.; Fossum, Eric R.; Liu, Jifeng

    2017-05-01

    This research investigates the fundamental limits and trade-space of quantum semiconductor photodetectors using the Schrödinger equation and the laws of thermodynamics.We envision that, to optimize the metrics of single photon detection, it is critical to maximize the optical absorption in the minimal volume and minimize the carrier transit process simultaneously. Integration of photon management with quantum charge transport/redistribution upon optical excitation can be engineered to maximize the quantum efficiency (QE) and data rate and minimize timing jitter at the same time. Due to the ultra-low capacitance of these quantum devices, even a single photoelectron transfer can induce a notable change in the voltage, enabling non-avalanche single photon detection at room temperature as has been recently demonstrated in Si quanta image sensors (QIS). In this research, uniform III-V quantum dots (QDs) and Si QIS are used as model systems to test the theory experimentally. Based on the fundamental understanding, we also propose proof-of-concept, photon-managed quantum capacitance photodetectors. Built upon the concepts of QIS and single electron transistor (SET), this novel device structure provides a model system to synergistically test the fundamental limits and tradespace predicted by the theory for semiconductor detectors. This project is sponsored under DARPA/ARO's DETECT Program: Fundamental Limits of Quantum Semiconductor Photodetectors.

  1. Effect of rotating shift work on childbearing and birth weight: a study of women working in a semiconductor manufacturing factory.

    Science.gov (United States)

    Lin, Yu-Cheng; Chen, Mei-Huei; Hsieh, Chia-Jung; Chen, Pau-Chung

    2011-05-01

    Stable circadian rhythm is important for both maternal and fetal health. This retrospective analysis of women in a semiconductor factory evaluated the effect of shift work exposure on childbearing and birth weight. Records of 440 female employees (initial mean age: 28.4 years) including 111 mothers who had 158 live births during the period of observation (1997-2007) were reviewed. The data analyzed included maternal age, general health condition, highest educational level, life-style and occupational factors, as well as newborn gender, birth weight, birth order and gestational age. The childbearing rates of female workers on three different work schedules (consistent daytime work (CDW), intermittent (i-) or persistent (p-) rotating shift works (RSW)) were 32.1%, 20.0% and 25.4%, respectively (P=0.047). After controlling for potential confounding factors, childbearing rates among women with CDW exceeded those of shift workers (odds ratio (OR), 1.7; 95% confidence interval (CI), 1.0-3.0). The birth weights of newborns from mothers on the three work schedules (CDW, i-RSW and p-RSW) were significantly different (3271.7±395.4, 3251.3±460.9, and 2998.5±381.2 g, respectively (Pschedules should be carefully planned for female employees who are pregnant or preparing for pregnancy. Prenatal evaluations for mothers with persistent day-night rotating shift work exposures are especially necessary.

  2. Effects of work-related factors on the breastfeeding behavior of working mothers in a Taiwanese semiconductor manufacturer: a cross-sectional survey.

    Science.gov (United States)

    Chen, Yi Chun; Wu, Ya-Chi; Chie, Wei-Chu

    2006-06-21

    In recent years, the creation of supportive environments for encouraging mothers to breastfeed their children has emerged as a key health issue for women and children. The provision of lactation rooms and breast pumping breaks have helped mothers to continue breastfeeding after returning to work, but their effectiveness is uncertain. The aim of this study was to assess the effects of worksite breastfeeding-friendly policies and work-related factors on the behaviour of working mothers. This study was conducted at a large Taiwanese semiconductor manufacturer in August-September 2003. Questionnaires were used to collect data on female employees' breastfeeding behaviour, child rearing and work status when raising their most recently born child. A total of 998 valid questionnaires were collected, giving a response rate of 75.3%. The results showed that 66.9% of survey respondents breastfed initially during their maternity leave, which averaged 56 days. Despite the provision of lactation rooms and breast pumping breaks, only 10.6% mothers continued to breastfeed after returning to work, primarily office workers and those who were aware of their company's breastfeeding-friendly policies. In conclusion, breastfeeding-friendly policies can significantly affect breastfeeding behaviour. However, an unfavourable working environment, especially for fab workers, can make it difficult to implement breastfeeding measures. With health professionals emphasizing that the importance of breastfeeding for infant health, and as only females can perform lactation, it is vital that women's work "productive role" and family "reproductive role" be respected and accommodated by society.

  3. What is the real effect of halogen atoms? electronic and packing properties of organic semiconductors (Conference Presentation)

    Science.gov (United States)

    Pei, Jian; Wang, Jie-Yu; Shi, Ke; Zheng, Yu-Qing

    2016-11-01

    N-type semiconductor is a necessary component for high speed and low power dissipation complementary circuits. However, n-type organic field-effect transistors (OFETs) with both high electron mobility and good ambient stability are rare. In this contribution, we develop a strong electron-deficient small molecule, tetrafluorine benzodifurandione-based oligo(p-phenylenevinylene) (4F-BDOPV), for n-type OFETs. 4F-BDOPV has a low LUMO level down to -4.44 eV and a cofacial packing structure in single crystal. These fea-tures provide 4F-BDOPV with good ambient stability and large charge transfer integrals leading to a high electron mobility of up to 12.6 cm2 V-1 s-1 in air, which is among the highest values for n-type OFETs. This work demonstrates a new molecule system for high-performance air-stable n-type OFETs, which is highly promising for single crystal based electronics.

  4. 78 FR 21344 - Grant of Authority for Subzone Status, Hemlock Semiconductor Corporation, (Polysilicon), Hemlock...

    Science.gov (United States)

    2013-04-10

    ... Status, Hemlock Semiconductor Corporation, (Polysilicon), Hemlock, Michigan Pursuant to its authority... polysilicon manufacturing facility of Hemlock Semiconductor Corporation, located in Hemlock, Michigan (FTZ... manufacturing of polysilicon at the facility of Hemlock Semiconductor Corporation, located in Hemlock, Michigan...

  5. Effects of work-related factors on the breastfeeding behavior of working mothers in a Taiwanese semiconductor manufacturer: a cross-sectional survey

    Directory of Open Access Journals (Sweden)

    Chie Wei-Chu

    2006-06-01

    Full Text Available Abstract Background In recent years, the creation of supportive environments for encouraging mothers to breastfeed their children has emerged as a key health issue for women and children. The provision of lactation rooms and breast pumping breaks have helped mothers to continue breastfeeding after returning to work, but their effectiveness is uncertain. The aim of this study was to assess the effects of worksite breastfeeding-friendly policies and work-related factors on the behaviour of working mothers. Methods This study was conducted at a large Taiwanese semiconductor manufacturer in August-September 2003. Questionnaires were used to collect data on female employees' breastfeeding behaviour, child rearing and work status when raising their most recently born child. A total of 998 valid questionnaires were collected, giving a response rate of 75.3%. Results The results showed that 66.9% of survey respondents breastfed initially during their maternity leave, which averaged 56 days. Despite the provision of lactation rooms and breast pumping breaks, only 10.6% mothers continued to breastfeed after returning to work, primarily office workers and those who were aware of their company's breastfeeding-friendly policies. Conclusion In conclusion, breastfeeding-friendly policies can significantly affect breastfeeding behaviour. However, an unfavourable working environment, especially for fab workers, can make it difficult to implement breastfeeding measures. With health professionals emphasizing that the importance of breastfeeding for infant health, and as only females can perform lactation, it is vital that women's work "productive role" and family "reproductive role" be respected and accommodated by society.

  6. Semiconductor Properties Near Interfaces.

    Science.gov (United States)

    1980-07-31

    Sputtered from Semiconductors", Proc. 13th Annual Conference of the Microbeam Analysis Society, 1978. 4. J. C. Potosky and D. B. Wittry, "The Secondary...Ion Optics of a Quadru- pole Ion Microprobe", Proc. 13th Annual Conference of the Microbeam Analysis Society, 1978. 5. F. Guo and D. B. Wittry, "Use...of Specimen Current Integration in SIMS", Proc. 13th Annual Conference of the Microbeam Analysis Society, 1978. 6. D. B. Wittry, ’. Y. Yin, and R. A

  7. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  8. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  9. Space manufacturing 1983; Proceedings of the Sixth Conference, Princeton University, Princeton, NJ, May 9-12, 1983

    Science.gov (United States)

    Burke, J. D. (Editor); Whitt, A. S. (Editor)

    1983-01-01

    General topics are biomedical and social sciences, space stations and habitats, space manufacturing, international and legal considerations, materials resources and processing, accelerators and asteroids, and space economics. Among the papers presented, consideration is given to the evolution of man as an explorer; whether people, robots, or hybrids should operate a space station; electrophoresis experiments in space; the emerging government regulation of American space entrepeneurs; the extraction and purification of iron-group and precious metals from asteroidal feedstocks; the construction, testing, and design comparison to computer simulation fo the Mass-Driver III; and the international competition in commercial aerospace markets.

  10. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  11. 2010 Defects in Semiconductors GRC

    Energy Technology Data Exchange (ETDEWEB)

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  12. International Conference of Defects in Semiconductors (19th), ICDS, Held in Aveiro, Portugal on July 21-25, 1997, Pt. 3

    Science.gov (United States)

    1998-01-23

    J. Zhong, H.A. Kitai, P. Mascher and W. Puff, J. Electrochem. Soc. 140, 3644 (1993). 15. R.M. de la Cruz, R. Pareja , R. Gonzalez, L.A. Boatner and Y...22. R. Pareja , R.M. de la Cruz and P. Moser, J. Phys.: Condens. Matter 4, 7153 (1992). 23. K. Terashima, E. Tokizaki, A. Uedono and S. Tanigawa...defect- related Auger excitation and de -excitation of erbium ions in semiconductor matrices assisted by multiphonon transitions. The results are

  13. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  14. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  15. Macroporous Semiconductors

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2010-05-01

    Full Text Available Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  16. Semiconductor heterojunctions

    CERN Document Server

    Sharma, B L

    1974-01-01

    Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers.Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then

  17. Energetic Materials - Technology, Manufacturing and Processing, 27th International Annual Conference of ICT June 25 - June 28, 1996 Karisruhe, Federal Republic of Germany

    National Research Council Canada - National Science Library

    1997-01-01

    .... The 27th International ICT Annual Conference centers at the discussion of the art in research and development of modern rocket propellants, explosives, gun propellants and pyrotechnics emphasizing...

  18. 78 FR 21099 - Grant of Authority for Subzone Status, Hemlock Semiconductor, L.L.C., (Polysilicon), Clarksville, TN

    Science.gov (United States)

    2013-04-09

    ... Status, Hemlock Semiconductor, L.L.C., (Polysilicon), Clarksville, TN Pursuant to its authority under the... manufacturing authority at the polysilicon manufacturing facility of Hemlock Semiconductor, L.L.C., located in... status for activity related to the manufacturing of polysilicon at the facility of Hemlock Semiconductor...

  19. Industrial science and technology research and development project of university cooperative type in fiscal 2000. Report on achievements in semiconductor device manufacturing processes using Cat-CVD method (Semiconductor device manufacturing processes using Cat-CVD method); 2000 nendo daigaku renkeigata sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (Cat-CVD ho ni yoru handotai device seizo process)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The catalytic chemical vapor deposition (Cat-CVD) method is a low-temperature thin film depositing technology that can achieve improvement in quality of semiconductor thin films and can perform inexpensive film deposition in a large area. The present project is composed of the basic research and development theme and the demonstrative research and development theme for the Cat-CVD method. This report summarizes the achievements in fiscal 2000 centering on the former theme. Discussions were given on the following five areas: 1) simulation on film thickness distribution in the Cat-CVD method, 2) life extension by preventing the catalyst converting into silicide and development of a catalyst integrated shear head, 3) vapor diagnosis in the film forming process by the Cat-CVD method using silane, hydrogen and ammonia, 4) a technology for high-speed deposition of hydrogenated amorphous silicon films for solar cells using the Cat-CVD method, and the low-temperature silicon oxide nitriding technology using heated catalysts, and 5) discussions on compatibility of transparent oxide electrode materials to the process of manufacturing thin-film silicon-based solar cells by using the Cat-CVD method. (NEDO)

  20. Semiconductor electrochemistry

    CERN Document Server

    Memming, Rüdiger

    2015-01-01

    Providing both an introduction and an up-to-date survey of the entire field, this text captivates the reader with its clear style and inspiring, yet solid presentation. The significantly expanded second edition of this milestone work is supplemented by a completely new chapter on the hot topic of nanoparticles and includes the latest insights into the deposition of dye layers on semiconductor electrodes. In his monograph, the acknowledged expert Professor Memming primarily addresses physical and electrochemists, but materials scientists, physicists, and engineers dealing with semiconductor technology and its applications will also benefit greatly from the contents.

  1. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  2. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  3. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  4. Semiconductor Detectors; Detectores de Semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Cortina, E.

    2007-07-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  5. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  6. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  7. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  8. Incorporating DSA in multipatterning semiconductor manufacturing technologies

    Science.gov (United States)

    Badr, Yasmine; Torres, J. A.; Ma, Yuansheng; Mitra, Joydeep; Gupta, Puneet

    2015-03-01

    Multi-patterning (MP) is the process of record for many sub-10nm process technologies. The drive to higher densities has required the use of double and triple patterning for several layers; but this increases the cost of the new processes especially for low volume products in which the mask set is a large percentage of the total cost. For that reason there has been a strong incentive to develop technologies like Directed Self Assembly (DSA), EUV or E-beam direct write to reduce the total number of masks needed in a new technology node. Because of the nature of the technology, DSA cylinder graphoepitaxy only allows single-size holes in a single patterning approach. However, by integrating DSA and MP into a hybrid DSA-MP process, it is possible to come up with decomposition approaches that increase the design flexibility, allowing different size holes or bar structures by independently changing the process for every patterning step. A simple approach to integrate multi-patterning with DSA is to perform DSA grouping and MP decomposition in sequence whether it is: grouping-then-decomposition or decomposition-then-grouping; and each of the two sequences has its pros and cons. However, this paper describes why these intuitive approaches do not produce results of acceptable quality from the point of view of design compliance and we highlight the need for custom DSA-aware MP algorithms.

  9. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  10. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  11. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  12. Power semiconductors

    CERN Document Server

    Kubát, M

    1984-01-01

    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  13. Green Manufacturing Fundamentals and Applications

    CERN Document Server

    2013-01-01

    Green Manufacturing: Fundamentals and Applications introduces the basic definitions and issues surrounding green manufacturing at the process, machine and system (including supply chain) levels. It also shows, by way of several examples from different industry sectors, the potential for substantial improvement and the paths to achieve the improvement. Additionally, this book discusses regulatory and government motivations for green manufacturing and outlines the path for making manufacturing more green as well as making production more sustainable. This book also: • Discusses new engineering approaches for manufacturing and provides a path from traditional manufacturing to green manufacturing • Addresses regulatory and economic issues surrounding green manufacturing • Details new supply chains that need to be in place before going green • Includes state-of-the-art case studies in the areas of automotive, semiconductor and medical areas as well as in the supply chain and packaging areas Green Manufactu...

  14. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  15. Unified Controller Design for Intelligent Manufacturing Automation

    National Research Council Canada - National Science Library

    Kosut, Robert

    1997-01-01

    .... The demonstration system selected was rapid thermal processing (RTP) of semiconductor wafers. This novel approach in integrated circuit manufacturing demands fast tracking control laws that achieve near uniform spatial temperature distributions...

  16. Offshoring in the Semiconductor Industry: Historical Perspectives

    OpenAIRE

    Brown, Clair; Linden, Greg

    2005-01-01

    Semiconductor design is a frequently-cited example of the new wave of offshoring and foreign-outsourcing of service sector jobs. It is certainly a concern to U.S. design engineers themselves. In addition to the current wave of white-collar outsourcing, the industry also has a rich experience with offshoring of manufacturing activity. Semiconductor companies were among the first to invest in offshore facilities to manufacture goods for imports back to the U.S. A brief review of these earlie...

  17. SCOOP - Semiconductor COmponents for Optical signal Processing

    DEFF Research Database (Denmark)

    Mørk, Jesper; Yvind, Kresten; Oxenløwe, Leif Katsuo

    2001-01-01

    Opto-electronic semiconductor devices operating at very high bitrates play a central role in the continued expansion of the transmission capacity of optical communication systems. A number of different devices based on quantum well structures have been manufactured within the framework of the nat......Opto-electronic semiconductor devices operating at very high bitrates play a central role in the continued expansion of the transmission capacity of optical communication systems. A number of different devices based on quantum well structures have been manufactured within the framework...

  18. Randomized controlled trial of a TiO2 Semiconductor toothbrush on mild-to-moderate periodontitis..

    Science.gov (United States)

    Quest, Dale W

    2015-02-01

    The Soladey toothbrush (Shiken Corp., Osaka, Japan) is based on the principle that electrical induction will cause a wetted titanium dioxide semiconductor to emit electrons. The manufacturer claims that in addition to the established mechanical benefits of brushing, the flow of electrons from the brush head may disrupt ionic bonding of plaque, neutralize bacterial organic acids, and thus confer an advantage over a conventional toothbrush. Determine whether a TiO2 semiconductor-containing toothbrush confers an advantage over a conventional toothbrush in adult patients with mild-to-moderate gingivitis/periodontitis. MATERIALS and Seventy-one patients with mild-to-moderate gingivitis/periodontitis were enrolled in this randomized, double-blind, placebo-controlled modified crossover trial that compared the Soladey-3 titanium dioxide semiconductor toothbrush (Shiken Corp., Osaka, Japan) to an otherwise identical toothbrush containing an inert resin core in place of the semiconductor. Changes in indices of gingivitis and periodontitis were the primary outcomes. Sixty-six patients completed the study. Relative to baseline, an almost two-fold increased gingival crevice fluid flow followed both active and control treatments was statistically significant. Relative to the inactive control device, the active Soladey-3 toothbrush had no clinically meaningful effects on selected markers of gingivitis/periodontitis. The active Soladey-3 toothbrush did not substantially impact selected markers of gingivitis/periodontitis by the end of a two-week treatment period in adult patients with mild-to-moderate disease. Both inactive (control) and active (TiO2 semi-conductor) versions of the Soladey toothbrushes significantly increased crevice fluid flow.

  19. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  20. 75 FR 24742 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Science.gov (United States)

    2010-05-05

    ... Semiconductor, Xiqing Integrated Semiconductor, Manufacturing Site, No. 15 Xinghua Road, Xiqing Economic... Malaysia Sdn. Bhd., NO. 2 Jalan SS 8/2, Free Industrial Zone, Sungai Way, 47300 Petaling Jaya, Selengor, Malaysia. Freescale Semiconductor Pte. Ltd., 7 Changi South Street 2, 03-00, Singapore 486415. Freescale...

  1. Semiconductor materials for solar photovoltaic cells

    CERN Document Server

    Wong-Ng, Winnie; Bhattacharya, Raghu

    2016-01-01

    This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing.  Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost.  Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce ...

  2. Life-cycle assessment of semiconductors

    CERN Document Server

    Boyd, Sarah B

    2012-01-01

    Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

  3. Semiconductors detectors: basics principals, fabrication and repair

    International Nuclear Information System (INIS)

    Souza Coelho, L.F. de.

    1982-05-01

    The fabrication and repairing techniques of semiconductor detectors, are described. These methods are shown in the way they are applied by the semiconductor detector laboratory of the KFA-Julich, where they have been developed during the last 15 years. The history of the semiconductor detectors is presented here, being also described the detector fabrication experiences inside Brazil. The key problems of manufacturing are raised. In order to understand the fabrication and repairing techniques the working principles of these detectors, are described. The cases in which worked during the stay in the KFA-Julich, particularly the fabrication of a plane Ge (Li) detector, with side entry, and the repair of a coaxial Ge (Li) is described. The vanguard problems being researched in Julich are also described. Finally it is discussed a timetable for the semiconductor detector laboratory of the UFRJ, which laboratory is in the mounting stage now. (Author) [pt

  4. Analysis and simulation of semiconductor devices

    CERN Document Server

    Selberherr, Siegfried

    1984-01-01

    The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the s...

  5. A mask manufacturer's perspective on maskless lithography

    Science.gov (United States)

    Buck, Peter; Biechler, Charles; Kalk, Franklin

    2005-11-01

    Maskless Lithography (ML2) is again being considered for use in mainstream CMOS IC manufacturing. Sessions at technical conferences are being devoted to ML2. A multitude of new companies have been formed in the last several years to apply new concepts to breaking the throughput barrier that has in the past prevented ML2 from achieving the cost and cycle time performance necessary to become economically viable, except in rare cases. Has Maskless Lithography's (we used to call it "Direct Write Lithography") time really come? If so, what is the expected impact on the mask manufacturer and does it matter? The lithography tools used today in mask manufacturing are similar in concept to ML2 except for scale, both in throughput and feature size. These mask tools produce highly accurate lithographic images directly from electronic pattern files, perform multi-layer overlay, and mix-n-match across multiple tools, tool types and sites. Mask manufacturers are already accustomed to the ultimate low volume - one substrate per design layer. In order to achieve the economically required throughput, proposed ML2 systems eliminate or greatly reduce some of the functions that are the source of the mask writer's accuracy. Can these ML2 systems meet the demanding lithographic requirements without these functions? ML2 may eliminate the reticle but many of the processes and procedures performed today by the mask manufacturer are still required. Examples include the increasingly complex mask data preparation step and the verification performed to ensure that the pattern on the reticle is accurately representing the design intent. The error sources that are fixed on a reticle are variable with time on an ML2 system. It has been proposed that if ML2 is successful it will become uneconomical to be in the mask business - that ML2, by taking the high profit masks will take all profitability out of mask manufacturing and thereby endanger the entire semiconductor industry. Others suggest that a

  6. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  7. Fourth Australian conference on nuclear techniques of analysis: AINSE, Lucas Heights, N.S.W. Proceedings

    International Nuclear Information System (INIS)

    1985-11-01

    Conference sessions covered the areas of materials science, semiconductors, ceramics and metals, archaeometry, industrial applications, environmental applications, bioscience, instrumentation, surfaces and geoscience

  8. Semiconductor foundry, lithography, and partners

    Science.gov (United States)

    Lin, Burn J.

    2002-07-01

    The semiconductor foundry took off in 1990 with an annual capacity of less than 0.1M 8-inch-equivalent wafers at the 2-mm node. In 2000, the annual capacity rose to more than 10M. Initially, the technology practiced at foundries was 1 to 2 generations behind that at integrated device manufacturers (IDMs). Presently, the progress in 0.13-mm manufacturing goes hand-in-hand with any of the IDMs. There is a two-order of magnitude rise in output and the progress of technology development outpaces IDMs. What are the reasons of the success? Is it possible to sustain the pace? This paper shows the quick rise of foundries in capacity, sales, and market share. It discusses the their uniqueness which gives rise to advantages in conjunction with challenges. It also shows the role foundries take with their customer partners and supplier partners, their mutual dependencies, as well as expectations. What role then does lithography play in the foundries? What are the lithographic challenges to sustain the pace of technology? The experience of technology development and transfer, at one of the major foundries, is used to illustrate the difficulties and progresses made. Looking into the future, as semiconductor manufacturing will become even more expensive and capital investment more prohibitive, we will make an attempt to suggest possible solutions.

  9. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  10. Use of radioactive tracers in the semiconductor industry

    International Nuclear Information System (INIS)

    Akerman, Karol

    1975-01-01

    Manufacture of the semiconductor materials comprises production and purification of the raw materials (GeC14 or SiHC13), purification of the elemental semiconductors by metallurgical methods (including zone melting), production and doping of single crystals, dividing the crystals into slices of suitable size, formation of p-n junctions and fabrication of the finished semiconductor devices. In the sequence of operations, the behavior of very small quantities of an element must be monitored, and radioactive tracers are often used to solve these problems. Examples are given of the use of radioactive tracers in the semiconductor industry

  11. Manufacturing Initiative

    Data.gov (United States)

    National Aeronautics and Space Administration — The Advanced Manufacturing Technologies (AMT) Project supports multiple activities within the Administration's National Manufacturing Initiative. A key component of...

  12. Electron beam writing on semiconductors

    International Nuclear Information System (INIS)

    Bierhenke, H.; Kutzer, E.; Pascher, A.; Plitzner, H.; Rummel, P.; Siemens A.G., Muenchen; Siemens A.G., Muenchen

    1979-08-01

    Reported are the results of the 3 1/2 year research project 'Electron beam Writing on Semiconductors'. Work has been done in the field of direct wafer exposure techniques, and of mask making. Described are resist technology, setting up of a research device, exploration of alignment procedures, manufacturing of devices and their radiation influence. Furthermore, investigations and measurements of an electron beam machine bought for mask making purposes, the development of LSI-circuits with this machine, the software necessary and important developments of digital subsystems are reported. (orig.) [de

  13. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures ...

  14. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  15. Conference on the Physics and Chemistry of Semiconductor Interfaces (26th) Held in the Catamaran Resort Hotel in Pacific Beach, San Diego, California on 17 January 1999 to 21 January 1999. Microelectronics and Nanometer Structures: Processing, Measurement, and Phenomena

    National Research Council Canada - National Science Library

    Schulte, C

    2000-01-01

    ...) are contained in this volume. The Conference was held at the Catamaran Resort Hotel in Pacific Beach, San Diego, California from Sunday evening, 17 January 1999 to noon on Thursday 21 January 1999 A total of 18 invited and 69...

  16. Report on achievement in the preceding research related to global industry technologies for the global industry technology research and development project. Research on gas systems substituting global warming gases such as PFC used in manufacturing semiconductors; 1998 nendo chikyu kankyo sangyo gijutsu ni kakawaru sendo kenkyu. Handotai seizo nado ni shiyosuru PFC nado no chikyu ondanka gas no daitai gas system no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The present semiconductor manufacturing process uses a great amount of PFC having large global warming coefficients and extremely long atmospheric life. A research was made particularly on reduction of its emission from etching processes. After introducing how the semiconductor industry has been working conventionally on protection of the global environment, this paper makes clear the purpose and positioning of this preceding research, as well as how it is moved forward. The paper also reports the results of analyzing and discussing the exhaust gases from etching devices using several kinds of substitute PFC gases. Survey results are reported on the possibilities of new substitute gases, plasma decomposition and treatment of exhaust gases, reaction process simulation, and in-situ analyzing and evaluating technologies. Investigations were made on the possibility of using no PFC in wiring processes which consume greater amount of PFC, as well as on wiring techniques using inter-layer insulation film with low dielectric rate, a new wiring structure forming technology, new functional elements, circuits and systems in a wide range. Proposals were given on specific research and development themes and plans that begin in fiscal 1999. (NEDO)

  17. Editorial Conference Comments by the General Chair

    Science.gov (United States)

    Reed, Robert A.

    2017-01-01

    The 53rd IEEE Nuclear and Space Radiation Effects Conference (NSREC) was held July 11-15, 2016, at the Oregon Convention Center in Portland; the conference hotel was the Portland Doubletree. The NSREC is recognized as one of the premier international conferences on radiation effects in electronic materials, devices, and systems. The 2016 conference continued this tradition with a strong technical program, a one-day tutorial short course, radiation effects data workshop, industrial exhibit, and meetings for the IEEE Women in Engineering and Young Professionals organizations. The conference was sponsored by the Radiation Effects Committee of the IEEE Nuclear and Plasma Sciences Society (NPSS), and supported by Atmel, BAE Systems, Boeing, Cobham Semiconductor Solutions, Freebird Semiconductor, Honeywell, International Rectifier, Intersil Corporation, Jet Propulsion Laboratory, Northrop Grumman, Southwest Research Institute, and VPT Rad.

  18. EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

    Science.gov (United States)

    Ólafsson, Sveinn; Sveinbjörnsson, Einar

    2010-12-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

  19. 37th International MATADOR Conference

    CERN Document Server

    Li, Lin

    2013-01-01

    Presented here are 97 refereed papers given at the 37th MATADOR Conference held at The University of Manchester in July 2012. The MATADOR series of conferences covers the topics of Manufacturing Automation and Systems Technology, Applications, Design, Organisation and Management, and Research.   The proceedings of this conference contain original papers contributed by researchers from many countries on different continents. The papers cover the principles, techniques and applications in aerospace, automotive, biomedical, energy, consumable goods and process industries.    The papers in this volume reflect: the importance of manufacturing to international wealth creation; the emerging fields of micro- and nano-manufacture; the increasing trend towards the fabrication of parts using lasers; the growing demand for precision engineering and part inspection techniques, and the changing trends in manufacturing within a global environment. .

  20. Manufacturing Interfaces

    NARCIS (Netherlands)

    van Houten, Frederikus J.A.M.

    1992-01-01

    The paper identifies the changing needs and requirements with respect to the interfacing of manufacturing functions. It considers the manufacturing system, its components and their relationships from the technological and logistic point of view, against the background of concurrent engineering.

  1. PREFACE: Theory, Modelling and Computational methods for Semiconductors

    Science.gov (United States)

    Migliorato, Max; Probert, Matt

    2010-04-01

    These conference proceedings contain the written papers of the contributions presented at the 2nd International Conference on: Theory, Modelling and Computational methods for Semiconductors. The conference was held at the St Williams College, York, UK on 13th-15th Jan 2010. The previous conference in this series took place in 2008 at the University of Manchester, UK. The scope of this conference embraces modelling, theory and the use of sophisticated computational tools in Semiconductor science and technology, where there is a substantial potential for time saving in R&D. The development of high speed computer architectures is finally allowing the routine use of accurate methods for calculating the structural, thermodynamic, vibrational and electronic properties of semiconductors and their heterostructures. This workshop ran for three days, with the objective of bringing together UK and international leading experts in the field of theory of group IV, III-V and II-VI semiconductors together with postdocs and students in the early stages of their careers. The first day focused on providing an introduction and overview of this vast field, aimed particularly at students at this influential point in their careers. We would like to thank all participants for their contribution to the conference programme and these proceedings. We would also like to acknowledge the financial support from the Institute of Physics (Computational Physics group and Semiconductor Physics group), the UK Car-Parrinello Consortium, Accelrys (distributors of Materials Studio) and Quantumwise (distributors of Atomistix). The Editors Acknowledgements Conference Organising Committee: Dr Matt Probert (University of York) and Dr Max Migliorato (University of Manchester) Programme Committee: Dr Marco Califano (University of Leeds), Dr Jacob Gavartin (Accelrys Ltd, Cambridge), Dr Stanko Tomic (STFC Daresbury Laboratory), Dr Gabi Slavcheva (Imperial College London) Proceedings edited and compiled by Dr

  2. Fabrication and application of amorphous semiconductor devices

    International Nuclear Information System (INIS)

    Kumurdjian, Pierre.

    1976-01-01

    This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

  3. Robust Manufacturing Control

    CERN Document Server

    2013-01-01

    This contributed volume collects research papers, presented at the CIRP Sponsored Conference Robust Manufacturing Control: Innovative and Interdisciplinary Approaches for Global Networks (RoMaC 2012, Jacobs University, Bremen, Germany, June 18th-20th 2012). These research papers present the latest developments and new ideas focusing on robust manufacturing control for global networks. Today, Global Production Networks (i.e. the nexus of interconnected material and information flows through which products and services are manufactured, assembled and distributed) are confronted with and expected to adapt to: sudden and unpredictable large-scale changes of important parameters which are occurring more and more frequently, event propagation in networks with high degree of interconnectivity which leads to unforeseen fluctuations, and non-equilibrium states which increasingly characterize daily business. These multi-scale changes deeply influence logistic target achievement and call for robust planning and control ...

  4. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  5. Semiconductor Modeling Techniques

    CERN Document Server

    Xavier, Marie

    2012-01-01

    This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.

  6. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  7. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  8. Precision manufacturing

    CERN Document Server

    Dornfeld, David

    2008-01-01

    Today there is a high demand for high-precision products. The manufacturing processes are now highly sophisticated and derive from a specialized genre called precision engineering. Precision Manufacturing provides an introduction to precision engineering and manufacturing with an emphasis on the design and performance of precision machines and machine tools, metrology, tooling elements, machine structures, sources of error, precision machining processes and precision process planning. As well as discussing the critical role precision machine design for manufacturing has had in technological developments over the last few hundred years. In addition, the influence of sustainable manufacturing requirements in precision processes is introduced. Drawing upon years of practical experience and using numerous examples and illustrative applications, David Dornfeld and Dae-Eun Lee cover precision manufacturing as it applies to: The importance of measurement and metrology in the context of Precision Manufacturing. Th...

  9. VMEbus in physics conference

    International Nuclear Information System (INIS)

    1986-01-01

    The first conference ''VMEbus in Physics'' was held at CERN on 7th and 8th October 1985. The conference surveyed the applications of the VMEbus standards in physics, with special emphasis on particle physics and accelerator control. Developments in the definition of the standards and in the formation of users groups were discussed. Manufacturer's representatives were given the opportunity to appreciate the requirements of the fast-growing VMEbus market in the physics community. These proceedings contain the unedited text of the oral and poster presentations given on that occasion. (orig.)

  10. Joint US/German Conference

    CERN Document Server

    Gulledge, Thomas; Jones, Albert

    1993-01-01

    This proceedings volume contains selected and refereed contributions that were presented at the conference on "Recent Developments and New Perspectives of Operations Research in the Area of Production Planning and Control" in Hagen/Germany, 25. - 26. June 1992. This conference was organized with the cooperation of the FernuniversiHit Hagen and was jointly hosted by the "Deutsche Gesellschaft fur Operations Research (DGOR)" and the "Manufacturing Special Interest Group of the Operations Research Society of America (ORSA-SIGMA)". For the organization of the conference we received generous financial support from the sponsors listed at the end of this volume. We wish to express our appreciation to all supporters for their contributions. This conference was the successor of the JOInt ORSA/DGOR-conference in Gaithersburg/Maryland, USA, on the 30. and 31. July 1991. Both OR-societies committed themselves in 1989 to host joint conferences on special topics of interest from the field of operations research. This goal ...

  11. Semiconductor data book characteristics of approx. 10,000 transistors, FETs, UJTs, diodes, rectifiers, optical semiconductors, triacs and SCRs

    CERN Document Server

    Ball, A M

    1981-01-01

    Semiconductor Data Book, 11th Edition presents tables for ratings and characteristics of transistors and multiple transistors; silicon field effect transistors; unijunction transistors; low power-, variable-, power rectifier-, silicon reference-, and light emitting diodes; photodetectors; triacs; thyristors; lead identification; and transistor comparable types. The book starts by providing an introduction and explanation of tables and manufacturers' codes and addresses. Professionals requiring such data about semiconductors will find the book useful.

  12. Micro-optics: manufacturing and characterization

    Science.gov (United States)

    Voelkel, R.; Eisner, M.; Weible, K. J.

    2005-10-01

    Wafer-based manufacturing of Micro-Optics is based on standard technologies from Semiconductor Industry, like resist coating, lithography, reactive ion etching, deposition, sputtering, and lift-off. These well-established technologies allow the manufacturing of almost any Micro-Optics' structure shape. The excellence of the Micro-Optics component depends much on the proper choice of the manufacturing equipment and the process control. As all processes are standard Semiconductor technology, the quality is merely a question of the budget and the optimization effort. For characterization and testing, the current situation is different. Neither the test equipment from Semiconductor industry nor the test equipment from classical optics manufacturing is suitable to for Micro-Optics. Most of test instruments Micro-Optics industry is using today have been developed by research institutes or by the manufacturing companies themselves. As Micro-Optics is still a niche market, all instruments are built in small series. This lack of suitable test equipment is a major problem for the Micro-Optics industry today. All process optimization in manufacturing is closely related to the capability to measure the quality of the products. We report on the state of the art in wafer-based manufacturing and summarize the standard characterization tools for Micro-Optics.

  13. Semiconductor Research Experimental Techniques

    CERN Document Server

    Balkan, Naci

    2012-01-01

    The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

  14. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz nonlinear...

  15. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  16. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  17. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  18. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  19. Conference Interpreters

    DEFF Research Database (Denmark)

    Leal Lobato, Ana Isabel

    2017-01-01

    Conference Interpreters: How to serve the cause of minorized communities in the new postmonolingual / ‘postmonodiscoursive’ order,......Conference Interpreters: How to serve the cause of minorized communities in the new postmonolingual / ‘postmonodiscoursive’ order,...

  20. Offshoring in the Semiconductor Industry: A Historical Perspective

    OpenAIRE

    Brown, Clair; Linden, Greg

    2005-01-01

    Semiconductor design is a frequently-cited example of the new wave of offshoring and foreign-outsourcing of service sector jobs. It is certainly a concern to U.S. design engineers themselves. In addition to the current wave of white-collar outsourcing, the industry also has a rich experience with offshoring of manufacturing activity. Semiconductor companies were among the first to invest in offshore facilities to manufacture goods for imports back to the U.S. A brief review of these...

  1. Semiconductor Nanowire and Nanoribbon Thermoelectrics: A Comprehensive Computational Study

    Science.gov (United States)

    2013-05-01

    Symposium (ISDRS), University of Maryland, College Park, MD (Dec. 7-9, 2011) 10. Daniel P. Schroeder, Arnold M. Kiefer , Deborah M. Paskiewicz, Zlatan...superlattices”, 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON-17), Santa Barbara , CA, August

  2. Fundamentals of semiconductor processing technology

    CERN Document Server

    El-Kareh, Badih

    1995-01-01

    The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac­ turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil­ ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech­ n...

  3. Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices

    CERN Document Server

    Merten, K; Bulirsch, R

    1990-01-01

    Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in­ cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con­ nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues dis...

  4. Conference Planning.

    Science.gov (United States)

    Burke, W. Warner, Ed.; Beckhard, Richard, Ed.

    This book, written to instruct in the use of a conference as a medium of social intercourse, is divided into four sections. Section I, which contains five articles, deals with factors to be considered in planning a conference. Specific techniques one can employ to improve a conference and several different techniques for evaluating the…

  5. Additive manufacturing.

    Science.gov (United States)

    Mumith, A; Thomas, M; Shah, Z; Coathup, M; Blunn, G

    2018-04-01

    Increasing innovation in rapid prototyping (RP) and additive manufacturing (AM), also known as 3D printing, is bringing about major changes in translational surgical research. This review describes the current position in the use of additive manufacturing in orthopaedic surgery. Cite this article: Bone Joint J 2018;100-B:455-60.

  6. Metal-Semiconductor Contacts

    Science.gov (United States)

    Pugh, D. I.

    Metal-semiconductor contacts display a range of electrical characteristics from strongly rectifying to ohmic, each having its own applications. The rectifying properties of metal points on metallic sulphides were used extensively as detectors in early radio experiments, while during the second world war the rectifying point contact diode became important as a frequency detector and low level microwave radar detector [1]. Since 1945 the development of metal semiconductor contacts has been stimulated by the intense activity in the field of semiconductor physics and has remained vital in the ohmic connection of semiconductor devices with the outside world. The developments in surface science and the increased use of Schottky barriers in microelectronics has lead to much research with the aim of obtaining a full understanding of the physics of barrier formation and of current transport across the metal-semiconductor interface. Large gain spin electronic devices are possible with appropriate designs by incorporating ferromagnetic layers with semiconductors such as silicon [2]. This inevitably leads to metal-semiconductor contacts, and the impact of such junctions on the device must be considered. In this section we aim to look simply at the physical models that can be used to understand the electrical properties that can arise from these contacts, and then briefly discuss how deviations of these models can occur in practical junctions.

  7. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  8. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  9. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  10. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  11. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  12. Second International Conference on CANDU Fuel

    International Nuclear Information System (INIS)

    Hastings, Ian J. ed.

    1989-01-01

    Thirty-four papers were presented at this conference in sessions dealing with international experience and programs relating to CANDU fuel; fuel manufacture; fuel behaviour; fuel handling, storage and disposal; and advanced CANDU fuel cycles. (L.L.)

  13. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  14. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  15. Semiconductor nuclear detectors

    International Nuclear Information System (INIS)

    Schaub, Bernard

    1976-01-01

    Three semiconductors are nowadays available for nuclear detection (germanium, mercury iodide, cadmium telluride). Their methods of elaboration are briefly described and, as a conclusion, a very close at-hand development of cadmium telluride is foreseen [fr

  16. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  17. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  18. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  19. Micro Manufacturing

    DEFF Research Database (Denmark)

    Hansen, Hans Nørgaard

    2003-01-01

    Manufacturing deals with systems that include products, processes, materials and production systems. These systems have functional requirements, constraints, design parameters and process variables. They must be decomposed in a systematic manner to achieve the best possible system performance...... processes are made applicable to a large number of customers, the pressure in regard to developing production technologies that make it possible to produce the products at a reasonable price and in large numbers is growing. The micro/nano manufacturing programme at the Department of Manufacturing....... If a micro manufacturing system isn’t designed rationally and correctly, it will be high-cost, unreliable, and not robust. For micro products and systems it is a continuously increasing challenge to create the operational basis for an industrial production. As the products through product development...

  20. Smart Manufacturing.

    Science.gov (United States)

    Davis, Jim; Edgar, Thomas; Graybill, Robert; Korambath, Prakashan; Schott, Brian; Swink, Denise; Wang, Jianwu; Wetzel, Jim

    2015-01-01

    Historic manufacturing enterprises based on vertically optimized companies, practices, market share, and competitiveness are giving way to enterprises that are responsive across an entire value chain to demand dynamic markets and customized product value adds; increased expectations for environmental sustainability, reduced energy usage, and zero incidents; and faster technology and product adoption. Agile innovation and manufacturing combined with radically increased productivity become engines for competitiveness and reinvestment, not simply for decreased cost. A focus on agility, productivity, energy, and environmental sustainability produces opportunities that are far beyond reducing market volatility. Agility directly impacts innovation, time-to-market, and faster, broader exploration of the trade space. These changes, the forces driving them, and new network-based information technologies offering unprecedented insights and analysis are motivating the advent of smart manufacturing and new information technology infrastructure for manufacturing.

  1. International Conference on Vehicle and Automotive Engineering

    CERN Document Server

    Bolló, Betti

    2017-01-01

    This book presents the proceedings of the first vehicle engineering and vehicle industry conference. It captures the outcome of theoretical and practical studies as well as the future development trends in a wide field of automotive research. The themes of the conference include design, manufacturing, economic and educational topics.

  2. Conference summaries

    International Nuclear Information System (INIS)

    1991-01-01

    This volume contains conference summaries for the 31. annual conference of the Canadian Nuclear Association and the 12. annual conference of the Canadian Nuclear Society. Topics of discussion include: reactor physics; thermalhydraulics; industrial irradiation; computer applications; fuel channel analysis; small reactors; severe accidents; fuel behaviour under accident conditions; reactor components, safety related computer software; nuclear fuel management; fuel behaviour and performance; reactor safety; reactor engineering; nuclear waste management; and, uranium mining and processing

  3. PREFACE: 16th Nordic Semiconductor Meeting

    Science.gov (United States)

    Pétur Gíslason, Hafliði; Guðmundsson, Viðar

    1994-01-01

    Some 30 years ago an informal meeting of the few Nordic specialists in semiconductor physics marked the beginning of what has become a biannual meeting of some hundred physicists and physics students from all the Nordic countries. The 16th Nordic Semiconductor Meeting took place at Laugarvatn, Iceland, June 12-15,1994. As a regional meeting the Nordic Semiconductor meeting has three characteristic features all of which distinguish it from more traditional international meetings in the field. First, it has the purpose of promoting Nordic cooperation in the international field of semiconductor physics. Research in the fields of advanced science and technology in the Nordic countries is likely to benefit from joining national forces before participating in the increasing European integration. Second, there is an unusually large fraction of graduate students amongst the participants of the Nordic Semiconductor Meeting. In fact, attending this conference is traditionally a part of the graduate program in seniconductor physics and technology. The Nordic Semiconductor Meeting is often the first conference of international character that graduate students attend in order to present a paper of poster. Third, there is an interdisciplinary quality of the meeting which is normally not the case for meetings of this size. In particular, the number of professional scientists from industry is comparable to the number of their academic colleagues. This is important for both groups, but perhaps the graduate students benefit most from presenting their results to both groups. The 16th Nordic Semiconductor Meeting, the first one in this series held in Iceland, attracted 129 active participants. The scientific programme was divided in twelve oral sessions. A novelty of this meeting was the emphasis on more fundamental physics in one of the two parallel sessions but more applied topics in the other, although the distinction was sometimes a matter of predilection. A poster session

  4. Specific Contact Resistance Measurements of Metal Semiconductor-Junctions

    NARCIS (Netherlands)

    Stavitski, N.; van Dal, M.J.H.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2006-01-01

    Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific

  5. Measurement of ionising radiation semiconductor detectors: a review

    International Nuclear Information System (INIS)

    Aussel, J.P.

    1986-06-01

    Manufacturing techniques for nuclear detectors using semiconductors are constantly advancing, and a large range of models with different specificities and characteristics are available. After a theoretical reminder, this report describes the main types of detectors, their working and their preferential use. A comparative table guides the neophyte reader in his choice [fr

  6. Production planning and control for semiconductor wafer fabrication facilities modeling, analysis, and systems

    CERN Document Server

    Mönch, Lars; Mason, Scott J

    2012-01-01

    Over the last fifty-plus years, the increased complexity and speed of integrated circuits have radically changed our world. Today, semiconductor manufacturing is perhaps the most important segment of the global manufacturing sector. As the semiconductor industry has become more competitive, improving planning and control has become a key factor for business success. This book is devoted to production planning and control problems in semiconductor wafer fabrication facilities. It is the first book that takes a comprehensive look at the role of modeling, analysis, and related information systems

  7. Conference summaries

    International Nuclear Information System (INIS)

    1986-01-01

    This volume contains conference summaries of the international conference on radioactive waste management of the Canadian Nuclear Society. Topics of discussion include: storage and disposal; hydrogeology and geochemistry; transportation; buffers and backfill; public attitudes; tailings; site investigations and geomechanics; concrete; economics; licensing; matrix materials and container design; durability of fuel; biosphere modelling; radioactive waste processing; and, future options

  8. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  9. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  10. Basic Semiconductor Physics

    CERN Document Server

    Hamaguchi, Chihiro

    2010-01-01

    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mob...

  11. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  12. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  13. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  14. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  15. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  16. Optical processes in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1975-01-01

    Based on a series of lectures at Berkeley, 1968-1969, this is the first book to deal comprehensively with all of the phenomena involving light in semiconductors. The author has combined, for the graduate student and researcher, a great variety of source material, journal research, and many years of experimental research, adding new insights published for the first time in this book.Coverage includes energy states in semiconductors and their perturbation by external parameters, absorption, relationships between optical constants, spectroscopy, radiative transitions, nonradiative recombination

  17. Content-Based Image Retrieval for Semiconductor Process Characterization

    Directory of Open Access Journals (Sweden)

    Kenneth W. Tobin

    2002-07-01

    Full Text Available Image data management in the semiconductor manufacturing environment is becoming more problematic as the size of silicon wafers continues to increase, while the dimension of critical features continues to shrink. Fabricators rely on a growing host of image-generating inspection tools to monitor complex device manufacturing processes. These inspection tools include optical and laser scattering microscopy, confocal microscopy, scanning electron microscopy, and atomic force microscopy. The number of images that are being generated are on the order of 20,000 to 30,000 each week in some fabrication facilities today. Manufacturers currently maintain on the order of 500,000 images in their data management systems for extended periods of time. Gleaning the historical value from these large image repositories for yield improvement is difficult to accomplish using the standard database methods currently associated with these data sets (e.g., performing queries based on time and date, lot numbers, wafer identification numbers, etc.. Researchers at the Oak Ridge National Laboratory have developed and tested a content-based image retrieval technology that is specific to manufacturing environments. In this paper, we describe the feature representation of semiconductor defect images along with methods of indexing and retrieval, and results from initial field-testing in the semiconductor manufacturing environment.

  18. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  19. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  20. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  1. Conference summaries

    International Nuclear Information System (INIS)

    1988-01-01

    This volume contains conference summaries of the 28. annual conference of the Canadian Nuclear Association, and the 9. annual conference of the Canadian Nuclear Society. Topics of discussion include: power reactors; fuel cycles; nuclear power and public understanding; future trends; applications of nuclear technology; CANDU reactors; operational enhancements; design of small reactors; accident behaviour in fuel channels; fuel storage and waste management; reactor commissioning/decommissioning; nuclear safety experiments and modelling; the next generation reactors; advances in nuclear engineering education in Canada; safety of small reactors; current position and improvements of fuel channels; current issues in nuclear safety; and radiation applications - medical and industrial

  2. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  3. Intense terahertz excitation of semiconductors

    CERN Document Server

    Ganichev, S D

    2006-01-01

    This work presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the centre of scientific activities because of the need of high-speed electronics.

  4. Semiconductor radiation detectors device physics

    CERN Document Server

    Lutz, Gerhard

    1999-01-01

    Describes the field of modern semiconductor detectors used for energy and position measurement radiation. This book includes an introduction to semiconductor physics. It explains the principles of semiconductor radiation detectors, followed by formal quantitative analysis. It also covers electronic signal readout.

  5. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...

  6. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  7. Biexcitons in semiconductor microcavities

    DEFF Research Database (Denmark)

    Borri, P.; Langbein, W.; Woggon, U.

    2003-01-01

    In this paper, the present status of the experimental study of the optical properties of biexcitons in semiconductor microcavities is reviewed. In particular, a detailed investigation of a polariton-biexciton transition in a high-quality single quantum well GaAs/AlGaAs microcavity is reported...

  8. Nupe conference.

    Science.gov (United States)

    1991-04-24

    A charterfor nursing advocacy to strengthen the nurse's role in exercising accountability and professional responsibility has been called for in a motion to be debated at NUPE's national conference at Scarborough in May.

  9. Apparel Manufacture

    Science.gov (United States)

    1995-01-01

    Marshall Space Flight Center teamed with the University of Alabama in Huntsville (UAH) in 1989 on a program involving development of advanced simulation software. Concurrently, the State of Alabama chartered UAH to conduct a technology advancement program in support of the state's apparel manufacturers. In 1992, under contract to Marshall, UAH developed an apparel-specific software package that allows manufacturers to design and analyze modules without making an actual investment -- it functions on ordinary PC equipment. By 1995, Marshall had responded to requests for the package from more than 400 companies in 36 states; some of which reported savings up to $2 million. The National Garment Company of Missouri, for example, uses the system to design and balance a modular line before committing to expensive hardware; for setting up sewing lines; and for determining the composition of a new team.

  10. 75 FR 56056 - Proposed Information Collection; Comment Request; Manufacturers' Shipments, Inventories, and...

    Science.gov (United States)

    2010-09-15

    ... the Council of Economic Advisers, Bureau of Economic Analysis, Federal Reserve Board, Conference Board... ``Manufacturers' Shipments, Inventories, and Orders Benchmark Supplement'' (MA-3001). This form will be cognitive...

  11. Green Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Patten, John

    2013-12-31

    Green Manufacturing Initiative (GMI): The initiative provides a conduit between the university and industry to facilitate cooperative research programs of mutual interest to support green (sustainable) goals and efforts. In addition to the operational savings that greener practices can bring, emerging market demands and governmental regulations are making the move to sustainable manufacturing a necessity for success. The funding supports collaborative activities among universities such as the University of Michigan, Michigan State University and Purdue University and among 40 companies to enhance economic and workforce development and provide the potential of technology transfer. WMU participants in the GMI activities included 20 faculty, over 25 students and many staff from across the College of Engineering and Applied Sciences; the College of Arts and Sciences' departments of Chemistry, Physics, Biology and Geology; the College of Business; the Environmental Research Institute; and the Environmental Studies Program. Many outside organizations also contribute to the GMI's success, including Southwest Michigan First; The Right Place of Grand Rapids, MI; Michigan Department of Environmental Quality; the Michigan Department of Energy, Labor and Economic Growth; and the Michigan Manufacturers Technical Center.

  12. EDITORIAL: The 24th Nordic Semiconductor Meeting The 24th Nordic Semiconductor Meeting

    Science.gov (United States)

    Páll Gunnlaugsson, Haraldur; Nylandsted Larsen, Arne; Uhrenfeldt, Christian

    2012-03-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a Topical Issue of Physica Scripta. All of the papers in this Topical Issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This 24th meeting of the Nordic Semiconductor community, NSM 2011, was held at Fuglsøcentret, close to Aarhus, Denmark, 19-22 June 2011. Support was provided by the Carlsberg Foundation, Danfysik and the semiconductor group at Aarhus University. Over 30 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The aim of the meeting was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. The 25th Nordic Semiconductor Meeting will be organized in June 2013 in Finland, chaired by Dr Filip Tuomisto, Aalto University. A Nordic Summer School on Semiconductor Science will be organized in connection with the conference (just before), chaired by Dr Jonatan Slotte, Aalto University. Information on these events can be found at physics.aalto.fi/nsm2013. List of participants Søren Vejling

  13. Layers of metal nanoparticles on semiconductors deposited by electrophoresis from solutions with reverse micelles

    Czech Academy of Sciences Publication Activity Database

    Žďánský, Karel; Kacerovský, Pavel; Zavadil, Jiří; Lorinčík, Jan; Fojtík, A.

    2007-01-01

    Roč. 2, č. 9 (2007), s. 450-454 ISSN 1931-7573. [Semiconducting & Insulating Materials Conference - SIMC /14./. Fayetteville, 15.05.2007-20.05.2007] R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z20670512 Keywords : semiconductor junctions * nanostructured materials * semiconductor devices Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.158, year: 2007

  14. 76 FR 63281 - Foreign-Trade Zone 78-Nashville, TN, Application for Subzone, Hemlock Semiconductor, L.L.C...

    Science.gov (United States)

    2011-10-12

    ... DEPARTMENT OF COMMERCE Foreign-Trade Zones Board [Docket 62-2011] Foreign-Trade Zone 78--Nashville, TN, Application for Subzone, Hemlock Semiconductor, L.L.C. (Polysilicon); Clarksville, TN An... polysilicon manufacturing facility of [[Page 63282

  15. The Flexible Foundry: Advanced Reconfigurable Manufacturing for Semiconductors

    Data.gov (United States)

    Federal Laboratory Consortium —  Sometimes it is not a device that is obsolete, but an idea. In logistics terms, the problem is not that the device becomes obsolete; the problem is that the device...

  16. LEAN Manufacturing

    DEFF Research Database (Denmark)

    Bilberg, Arne

      As part of an employment as Technology Architect at the company Linak in combination with research at the University of Southern Denmark, this paper will present results from a strategy process where Lean has been pointed out as being a very strategic element in the Linak Production System......, organizational and management improvements in the company to what is named the Linak Production System.  ....... The mission with the strategy is to obtain competitive production in Denmark and in Western Europe based on the right combination of manufacturing principles, motivated and trained employees, level of automation, and cooperation with suppliers and customers worldwide. The strategy has resulted in technical...

  17. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  18. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  19. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  20. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  1. CSIR R&D in emerging manufacturing technologies

    CSIR Research Space (South Africa)

    Trollip, Neil

    2017-10-01

    Full Text Available This presentation discusses Advanced Robotics and Emerging manufacturing technologies by Dr Neil Trollip, at the 6th CSIR Conference: Ideas that work for industrial development, 5-6 October 2017, CSIR International Convention Centre, Pretoria...

  2. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  3. Quantum Confined Semiconductors

    Science.gov (United States)

    2015-02-01

    RCR    , (5) which considers all elastic scattering events on the energy shell kk EEE   , which is appropriate for all scattering...fluctuations in semiconductor superlattices using a magneto -transport technique,” Superlattices and Microstructures 15, 225-228 (1994). 12. I. Dharssi and...εyy is consistently slightly tensile (≈ -1%), which agreed with theoretical calculations of εyy based on published values of elastic constants. An

  4. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  5. Semiconductor projectile impact detector

    Science.gov (United States)

    Shriver, E. L. (Inventor)

    1977-01-01

    A semiconductor projectile impact detector is described for use in determining micrometeorite presence, as well as its flux and energy comprising a photovoltaic cell which generates a voltage according to the light and heat emitted by the micrometeorites upon impact. A counter and peak amplitude measuring device were used to indicate the number of particules which strike the surface of the cell as well as the kinetic energy of each of the particles.

  6. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  7. Semiconductor detectors. Recent evolution

    International Nuclear Information System (INIS)

    Siffert, P.

    1977-01-01

    The recent evolution as well as the problems appearing in the use of semiconductor counters in both X and γ-ray as well as heavy ions spectroscopy are reviewed. For the photon counters the discussion is limited to cadmium telluride and mercuric iodide room temperature diodes, whereas for heavy ions, identification by means of thin ΔE/Δx counters and some problems related to the pulse amplitude in E detectors are considered [fr

  8. PREFACE: The Irago Conference 2012

    Science.gov (United States)

    Sandhu, Adarsh; Okada, Hiroshi

    2013-04-01

    The Irago Conference 2012 - 360 degree outlook on critical scientific and technological challenges for a sustainable society Organized by the Electronics-Inspired Interdisciplinary Research Institute (EIIRIS) at Toyohashi University of Technology, the Irago Conference, held recently (15-16 November) in Aichi, Japan, aimed to enhance mutual understanding between scientists, engineers and policymakers. Over 180 participants tackled topics ranging from energy and natural resources to public health and disaster prevention. The 360-degree outlook of the conference impressed speakers and guests. ''This conference has been extremely informative,'' noted Robert Gellar from the University of Tokyo. ''A unique conference with experts from a range of backgrounds,'' agreed Uracha Ruktanonchai from the National Nanotechnology Center (NANOTEC) in Thailand. Similarly, G P Li, professor of electrical engineering and computer science at the University of California Irvine commented that he had been ''able to think the unthinkable'' as a range of topics came together. The conference was streamed live on Ustream to ensure that researchers from across the world could benefit from thought-provoking presentations examining global issues such as energy, disaster mitigation and nanotechnology. ''This was wonderful,'' said Oussama Khatib from Stanford University, ''A good recipe of speakers from such a range of backgrounds.'' Manuscripts submitted to the organizers were peer-reviewed, and the papers in this proceedings were accepted for Journal of Physics: Conference Series. In addition to the formal speaker programme, graduate-student sessions provided a platform for graduate students to describe their latest findings as oral presentations. A series of excursions to relevant locations, such as the Tahara megasolar region under construction and a local car-manufacturing factory, gave participants the opportunity to further consider practical applications of their research in industry

  9. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  10. Mendel conference

    CERN Document Server

    2015-01-01

    This book is a collection of selected accepted papers of Mendel conference that has been held in Brno, Czech Republic in June 2015. The book contents three chapters which represent recent advances in soft computing including intelligent image processing and bio-inspired robotics.: Chapter 1: Evolutionary Computing, and Swarm intelligence, Chapter 2: Neural Networks, Self-organization, and Machine Learning, and Chapter3: Intelligent Image Processing, and Bio-inspired Robotics. The Mendel conference was established in 1995, and it carries the name of the scientist and Augustinian priest Gregor J. Mendel who discovered the famous Laws of Heredity. In 2015 we are commemorating 150 years since Mendel's lectures, which he presented in Brno on February and March 1865. The main aim of the conference was to create a periodical possibility for students, academics and researchers to exchange their ideas and novel research methods.  .

  11. Optimized manufacturable porous materials

    DEFF Research Database (Denmark)

    Andreassen, Erik; Andreasen, Casper Schousboe; Jensen, Jakob Søndergaard

    to include manufacturing constraints in the optimization. This work focuses on incorporating the manufacturability into the optimization procedure, allowing the resulting material structure to be manufactured directly using rapid manufacturing techniques, such as selective laser melting/sintering (SLM...

  12. 75 FR 49526 - Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor...

    Science.gov (United States)

    2010-08-13

    ... Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor, Inc., Technical... October 1, 2009, applicable to workers of Freescale Semiconductor, Inc., Technical Information Center..., Massachusetts location of Freescale Semiconductor, Inc., Technical Information Center. The intent of the...

  13. New developments in power semiconductors

    Science.gov (United States)

    Sundberg, G. R.

    1983-06-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  14. Conference report

    African Journals Online (AJOL)

    Tamara Shefer

    Bloomberg Philanthropies. The conference theme “from research to implementation” emphasised the importance of connecting knowledge around violence with injury prevention, while stressing the need to address the multitude of transnational public health challenges. In speaking to this theme, the. Tampere Declaration ...

  15. Conference Materials

    International Nuclear Information System (INIS)

    Paszkiewicz, W.

    2004-01-01

    This www page consist of short abstract of presentation of ''7 International School and Symposium on Synchrotron Radiation in Natural Science'' held in Zakopane - Poland in 2004. The main subjects of this conference was mainly: new application of synchrotron radiation and modern measuring methods and theirs development

  16. Conference summaries

    International Nuclear Information System (INIS)

    1983-01-01

    The papers presented at this conference cover the fields of thermalhydraulics, nuclear plant design and operation, licensing, decontamination, restoration and dismantling of nuclear power facilities, services to the nuclear industry, new applications of nuclear technology, reactor physics and fuel cycles, accelerator-breeders, fusion research and lasers

  17. CONFERENCE REPORTS

    African Journals Online (AJOL)

    Test

    the conference, conducted an open interview with representatives of the psychology departments at both universities. Spanning a diverse range of topics, this interview allowed attendees a more intimate insight into the minds of some of the leaders of the field both on the continent, and internationally. The applicability of ...

  18. Conference proceedings

    African Journals Online (AJOL)

    ebutamanya

    2016-02-29

    Feb 29, 2016 ... In addition, there are persistent problems with leadership and planning, vaccine stock management, supply chain capacity and quality, provider-parent communication, and financial sustainability. The conference delegates agreed to move from talking to taking concrete actions around children's health, and ...

  19. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  20. Physics of Organic Semiconductors

    CERN Document Server

    Brütting, Wolfgang

    2005-01-01

    Filling the gap in the literature currently available, this book presents an overview of our knowledge of the physics behind organic semiconductor devices. Contributions from 18 international research groups cover various aspects of this field, ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in such different devices as organic field-effect transistors, photovoltaic cells and organic light-emitting diodes. From the contents:. * Excitation Dynamics in O

  1. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  2. Semiconductor characterization for optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Miner, C.J. [Bell Northern Research Ltd., Ottawa, ON (Canada)

    1996-03-01

    Scanning reflectance spectroscopy, scanning photoluminescence, and double crystal x-ray diffraction mapping are all specialized non-destructive characterization tools which monitor the advanced materials used in the development of high speed optoelectronics. Each technology was described and their application in the assessment of III-V semiconductor composition, layer thickness and defect density was demonstrated. The new techniques have been optimized for speed, to make high spatial resolution mapping practical. Since the tests are non-destructive, frequent monitoring is possible. 11 refs., 7 figs.

  3. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  4. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  5. Hydrogen in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1991-01-01

    Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed cove

  6. 4th Neutron Transmutation Doping Conference

    CERN Document Server

    1984-01-01

    viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza­ tion of NTD silicon, and the use of NTD silicon for device appli­ cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans­ mutation doping of nonsilicon semiconductors had begun to accel­ erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the p...

  7. Squeezed light in semiconductors

    CERN Document Server

    Ward, M B

    2001-01-01

    Experimental evidence is presented for the generation of photon-number squeezed states of light as a result of multi-photon absorption. Photon-number squeezing as a result of non-linear absorption has long been predicted and results have been obtained utilising two very different material systems: (i) an AIGaAs waveguide in which high optical intensities can be maintained over a relatively long interaction length of 2 mm; (ii) the organic polymer p-toluene sulphonate polydiacetylene that is essentially a one-dimensional semiconductor possessing a highly nonlinear optical susceptibility. The resulting nonlinear absorption is shown to leave the transmitted light in a state that is clearly nonclassical, exhibiting photon-number fluctuations below the shot-noise limit. Tuning the laser wavelength across the half-bandgap energy has enabled a comparison between two- and three-photon processes in the semiconductor waveguide. The correlations created between different spectral components of a pulsed beam of light as ...

  8. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  9. Doped semiconductor nanocrystal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Borowik, Ł.; Mélin, T., E-mail: thierry.melin@isen.iemn.univ-lille1.fr [Institut d’Electronique, de Microélectronique et de Nanotechnologie, CNRS-UMR8520, Avenue Poincaré, F-59652 Villeneuve d’Ascq (France); Nguyen-Tran, T.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS-UMR7647, Ecole Polytechnique, F-91128 Palaiseau (France)

    2013-11-28

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  10. Conference summaries

    International Nuclear Information System (INIS)

    1987-01-01

    This volume contains summaries of 28 papers presented at the 27. conference of the Canadian Nuclear Association. These papers discuss the general situation of the Canadian nuclear industry and the CANDU reactor; dialogue with the public; the International Atomic Energy Agency; and economic goals and operating lessons. It also contains summaries of 70 papers presented at the 8. conference of the Canadian Nuclear Society, which discuss plant life extension; safety and the environment; reactor physics; thermalhydraulics; risk assessment; the CANDU spacer location and repositioning project; CANDU operations; safety research after Chernobyl; fuel channels; and nuclear technology developments. The individual papers are also available in INIS-mf--13673 (CNA), and INIS-mf--12909 (CNS). (L.L.)

  11. SIGEF Conference

    CERN Document Server

    Terceño-Gómez, Antonio; Ferrer-Comalat, Joan; Merigó-Lindahl, José; Linares-Mustarós, Salvador

    2015-01-01

    This book is a collection of selected papers presented at the SIGEF conference, held at the Faculty of Economics and Business of the University of Girona (Spain), 06-08 July, 2015. This edition of the conference has been presented with the slogan “Scientific methods for the treatment of uncertainty in social sciences”. There are different ways for dealing with uncertainty in management. The book focuses on soft computing theories and their role in assessing uncertainty in a complex world. It gives a comprehensive overview of quantitative management topics and discusses some of the most recent developments in all the areas of business and management in soft computing including Decision Making, Expert Systems and Forgotten Effects Theory, Forecasting Models, Fuzzy Logic and Fuzzy Sets, Modelling and Simulation Techniques, Neural Networks and Genetic Algorithms and Optimization and Control. The book might be of great interest for anyone working in the area of management and business economics and might be es...

  12. Conference Proceedings

    International Nuclear Information System (INIS)

    1998-01-01

    National and international aspects of climate change were the central concern of this conference organized by the Alliance for Responsible Environmental Alternatives (AREA). AREA is a coalition of industry, labour and municipalities from across Canada which was created to reflect the views and represent the interests of Canadians in the Climate Change Debate. Ways and means of optimizing Canada's response to the Global Climate Change Challenge were discussed. Discussions emphasized issues regarding the effectiveness of voluntary mechanisms to reduce greenhouse gases, as opposed to government-mandated actions for achieving climate change targets. The issue of how a differentiated system for emission reduction targets and timetables can be implemented was also debated. The economic implications of climate change were outlined. Canada's national agenda and the likely outcomes of the Conference of Parties (COP 4) in Buenos Aires also received much attention. tabs., figs

  13. Glasgow conference

    International Nuclear Information System (INIS)

    Fraser, Gordon

    1994-01-01

    The biennial 'Rochester' International Conferences on High Energy Physics which tick the rhythm of high energy physics progress reflect the dominance of the 'Standard Model' - the picture of electroweak and quark/gluon interactions in a simple framework of six weaklyinteracting particles (leptons) and six quarks. Despite its limited intellectual appeal, after a decade of intense probing the Standard Model still refuses to budge

  14. Process for producing chalcogenide semiconductors

    Science.gov (United States)

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  15. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  16. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  17. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  18. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  19. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  20. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  1. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  2. Electrostatic Doping in Semiconductor Devices

    NARCIS (Netherlands)

    Gupta, Gaurav; Rajasekharan, Bijoy; Hueting, Raymond J.E.

    2017-01-01

    To overcome the limitations of chemical doping in nanometer-scale semiconductor devices, electrostatic doping (ED) is emerging as a broadly investigated alternative to provide regions with a high electron or hole density in a semiconductor device. In this paper, we review various reported ED

  3. Luminescence studies of semiconductor electrodes

    NARCIS (Netherlands)

    Kelly, J.J.; Kooij, Ernst S.; Meulenkamp, E.A.

    1999-01-01

    In this paper we review our recent results of in-situ luminescence studies of semiconductor electrodes. Three classes of materials are considered: single crystal compound semiconductors, porous silicon and semiconducting oxides doped with luminescent ions. We show how photoluminescence (PL) and

  4. Incorporating climate change into corporate business strategies. Conference proceedings

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-12-31

    This document contains the papers presented at the International Climate Change Conference and Technologies Exhibition June 12-13, 1997. Topics include energy supply and electricity generation; forestry and agriculture; and the chemical, energy, and manufacturing industries.

  5. 9th Conference on Coordinate Measuring Machines

    DEFF Research Database (Denmark)

    De Chiffre, Leonardo; Dorph, Pernille

    2001-01-01

    This one-day conference on coordinate measuring machines is the 9th in a row of conferences organised in connection with the Danish CMM Club, a users’ group regarding CMMs that has existed in Denmark since 1994. The Danish CMM Club was founded by the Department of Manufacturing Engineering...... termination of the second lifetime cycle of the club. This conference treates the traceability of geometrical measurements with particular reference to those obtained using coordinate measuring machines. A number of on-going activities and new achievements in coordinate metrology are presented by European...

  6. The impact of fit manufacturing on green manufacturing: A review

    Science.gov (United States)

    Qi, Ang Nian; Sin, Tan Chan; Fathullah, M.; Lee, C. C.

    2017-09-01

    Fit manufacturing and Green manufacturing are a new trend principle and concept. They are getting popular in industrial. This paper is identifying the impact between Fit manufacturing and Green manufacturing. Besides Fit manufacturing, Lean manufacturing, Agile manufacturing and Sustainable manufacturing gives big impacts to Green Manufacturing. On top of that, this paper also discuss the benefits of applying Fit manufacturing and Green manufacturing in industrial as well as environment. Hence, applications of Fit manufacturing and Green Manufacturing are increasing year by year.

  7. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  8. National Radiological Conference (Conference information and abstract)

    International Nuclear Information System (INIS)

    Khan, A.U.

    1998-01-01

    The national radiological conference was held at Peshawar, Pakistan. This book gives the conference information and abstracts of papers presented in the conference. There are about 37 abstracts submitted for the conference and related nature of the materials. Out of these 37 papers 17 are of nuclear oriented which are presented here separately. (A.B.)

  9. Characterization and Metrology for ULSI Technology: 1998 International Conference. Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Seiler, D.G. [NIST, Gaithersburg, MD 20899 (United States); Diebold, A.C. [SEMATECH, Austin, TX 78741 (United States); Bullis, W.M. [SEMI, Mountain View, CA 94043 (United States); Schaffner, T.J. [Texas Instruments, Dallas, TX 75221 (United States); McDonald, R. [Intel Corp., Santa Clara, CA 95050 (United States); Walters, E.J. [NIST, Gaithersburg, MD 20899 (United States)

    1998-11-01

    These proceedings represent papers presented at the 1998 International Conference on Characterization and Metrology for ULSI Technology (INIST) in March 1998. The Conference reviewed important semiconductor techniques that are crucial to continued advancements in the semiconductor industry. It brought together leaders, scientists, and engineers concerned with all aspects of the technology and characterization techniques for silicon research. The topics covered included front end processes consisting of modeling, materials, gate dielectrics, doping and wafer issues. Interconnects were discussed in detail including deposition technology. Lithography and patterning was also discussed. Finally, packaging/assembly of the integrated circuits and materials characterization including dopant profiling was discussed. The papers provide an effective portrayal of industry characterization needs and point out some of the problems that must be addressed by industry, academia, and government to continue the dramatic progress in semiconductor technology. There were 141 papers included in these proceedings, out of which 9 have been abstracted for the Energy,Science and Technology database.(AIP)

  10. Manufacturing a submicron structure using a liquid precursor

    NARCIS (Netherlands)

    Ishihara, R.; Van de Zwan, M.; Trifunovic, M.

    2014-01-01

    Methods for manufacture of a submicron semiconductor structure on a substrate are described. The method may comprise: forming at least one template layer over a support substrate; forming one or more template structures, preferably one or more recesses and/or mesas, in said template layer, said one

  11. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  12. Hydrogen in compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    1993-05-01

    Progress in the understanding of hydrogen and its interactions in III/V and II/VI compound semiconductors is reviewed. Donor, acceptor and deep level passivation is well established in III/V compounds based on electrical measurements and on spectroscopic studies. The hydrogen donor levels in GaAs and GaP are estimated to lie near E{sub v}+0.5 eV and E{sub v}+0.3 eV, respectively. Arsenic acceptors have been passivated by hydrogen in CdTe and the very first nitrogen-hydrogen local vibrational model spectra in ZnSe have been reported. This long awaited result may lead to an explanation for the poor activation of nitrogen acceptors in ZnSe grown by techniques which involve high concentrations of hydrogen.

  13. Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas

    Science.gov (United States)

    Helal, Yaser H.

    Plasmas used for manufacturing processes of semiconductor devices are complex and challenging to characterize. The development and improvement of plasma processes and models rely on feedback from experimental measurements. Current diagnostic methods are not capable of measuring absolute densities of plasma species with high resolution without altering the plasma, or without input from other measurements. At pressures below 100 mTorr, spectroscopic measurements of rotational transitions in the submillimeter/terahertz (SMM) spectral region are narrow enough in relation to the sparsity of spectral lines that absolute specificity of measurement is possible. The frequency resolution of SMM sources is such that spectral absorption features can be fully resolved. Processing plasmas are a similar pressure and temperature to the environment used to study astrophysical species in the SMM spectral region. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied in the laboratory and their absorption spectra have been cataloged or are in the literature for the purpose of astrophysical study. Recent developments in SMM devices have made its technology commercially available for applications outside of specialized laboratories. The methods developed over several decades in the SMM spectral region for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500 - 750 GHz radiation through a commercial inductively coupled plasma

  14. Conference examines the future of high performance computing

    OpenAIRE

    Trulove, Susan

    2005-01-01

    The future of high-performance computing as seen by the leading information technology manufacturers and independent hardware vendors is the theme of the Virginia Tech High Performance Computing Conference on Wednesday and Thursday, May 25 and 26, at the Donaldson Brown Hotel & Conference Center on campus.

  15. Conference summaries

    International Nuclear Information System (INIS)

    Phillips, G.J.

    1985-01-01

    The 113 papers presented at this conference covered the areas of 1) fuel design, development and production; 2) nuclear plant safety; 3) nuclear instrumentation; 4) public and regulatory matters; 5) developments and opportunities in fusion; 6) fuel behaviour under normal operating conditions; 7) nuclear plant design and operations; 8) materials science and technology; 9) nuclear power issues; 10) fusion technology; 11) fuel behaviour under accident conditions; 12) large scale fuel channel replacement programs; 13) thermalhydraulics experimental studies; 14) reactor physics and analysis; 15) applications of accelerators; 16) fission product release and severe fuel damage under accident conditions; 17) thermalhydraulics modeling and assessments; 18) waste management and the environment; and 20) new reactor concepts

  16. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  17. Agile Multi-Parallel Micro Manufacturing Using a Grid of Equiplets

    NARCIS (Netherlands)

    Leo van Moergestel; Ing. Erik Puik

    2010-01-01

    Abstract: Unlike manufacturing technology for semiconductors and printed circuit boards, the market for traditional micro assembly lacks a clear public roadmap. More agile manufacturing strategies are needed in an environment in which dealing with change becomes a rule instead of an exception. In

  18. NATO Conference

    CERN Document Server

    Lynn, W

    1975-01-01

    The contents of this volume involve selection, emendation and up-dating of papers presented at the NATO Conference "Mathe­ matical Analysis of Decision problems in Ecology" in Istanbul, Turkey, July 9-13, 1973. It was sponsored by the System Sciences Division of NATO directed by Dr. B. Bayraktar with local arrange­ ments administered by Dr. Ilhami Karayalcin, professor of the Department of Industrial Engineering at the Technical University of Istanbul. It was organized by A. Charnes, University professor across the University of Texas System, and Walter R.Lynn, Di­ rector of the School of Civil and Environmental Engineering at Cornell Unjversity. The objective of the conference was to bring together a group of leading researchers from the major sciences involved in eco­ logical problems and to present the current state of progress in research of a mathematical nature which might assist in the solu­ tion of these problems. Although their presentations are not herein recorded, the key­ note address of Dr....

  19. EGC Conferences

    CERN Document Server

    Ritschard, Gilbert; Pinaud, Bruno; Venturini, Gilles; Zighed, Djamel; Advances in Knowledge Discovery and Management

    This book is a collection of representative and novel works done in Data Mining, Knowledge Discovery, Clustering and Classification that were originally presented in French at the EGC'2012 Conference held in Bordeaux, France, on January 2012. This conference was the 12th edition of this event, which takes place each year and which is now successful and well-known in the French-speaking community. This community was structured in 2003 by the foundation of the French-speaking EGC society (EGC in French stands for ``Extraction et Gestion des Connaissances'' and means ``Knowledge Discovery and Management'', or KDM). This book is intended to be read by all researchers interested in these fields, including PhD or MSc students, and researchers from public or private laboratories. It concerns both theoretical and practical aspects of KDM. The book is structured in two parts called ``Knowledge Discovery and Data Mining'' and ``Classification and Feature Extraction or Selection''. The first part (6 chapters) deals with...

  20. Munich conference

    International Nuclear Information System (INIS)

    Anon.

    1988-01-01

    'The Standard Model has survived impact for another year', declared Don Perkins of Oxford, summarizing the 24th International Conference on High Energy Physics held in Munich from 4-10 August. 'But is this a triumph or a frustration for physics?' he added. The twin pillars of the Standard Model, the electroweak unification of electromagnetism and the weak nuclear force, and the field theory (quantum chromodynamics) of the quark-gluon interactions responsible for the strong nuclear force, have not trembled since the electroweak unification went to the textbooks in 1983, but from time to time small cracks have appeared which might have gone on to shake the theory severely, if not undermine it. Major conference summarizers have got used to singing the praises of the Standard Model, but this year at Munich even detailed examination failed to reveal any serious cracks, while looking deeper into physics even some anomalous results hinting at gaps in understanding have either gone away or have diminished credibility

  1. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  2. 8th Czechoslovak spectroscopic conference. Abstracts

    International Nuclear Information System (INIS)

    1988-01-01

    Volume 3 of the conference proceedings contains abstracts of 17 invited papers, 101 poster presentations and 7 papers of instrument manufacturers, devoted to special spectroscopic techniques including X-ray microanalysis, X-ray spectral analysis, Moessbauer spectrometry, mass spectrometry, instrumental activation analysis and other instrumental radioanalytical methods, electron spectrometry, and techniques of environmental analysis. Sixty abstracts were inputted in INIS. (A.K.)

  3. Conference report: 60th American Society for MS Conference on MS and Allied Topics.

    Science.gov (United States)

    Touboul, David; Seyer, Alexandre; Becher, François

    2012-09-01

    The 60th American Society for Mass Spectrometry (ASMS) Conference on MS and Allied Topics was held in May 2012 at Vancouver in Canada. This international congress is the largest forum exclusively dedicated to MS through its diverse aspects: fundamental, method development and applications to biomolecules. This 4-day conference is also highly appreciated for discussion with the MS manufacturers presenting their latest instrumental developments.

  4. Selective, electrochemical etching of a semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  5. Funding Proposal for EDISON’20 Conference Buffalo, New York, 07/17 - 07/21, 2017

    Energy Technology Data Exchange (ETDEWEB)

    Bird, Jonathan [Univ. at Buffalo, NY (United States)

    2017-06-15

    EDISON’20 – The 20th International Conference on Electron Dynamics in Semiconductors, Optoe- lectronics and Nanostructures – was held at the Hyatt Regency Hotel, Buffalo, NY from July 17 – 21, 2017. The technical focus of this conference was on the fundamental physics and applications of nonequilibrium classical and quantum carrier dynamics in semiconductors, optoelectronic de- vices, and nanostructures. This five-day, single-session conference featured a program consisting of some 15 invited talks, given by internationally-renowned academics from the U.S., Europe, and Japan. Their keynote presentations covered topics including: terahertz phenomena in semiconductors; quantum transport in novel two-dimensional semiconductors; topological insulators; mesoscopic phenomena in semiconductors, and; semiconductor spintronics. The invited papers were supplemented by some 30 contributed talks, selected from almost 120 abstracts submitted in response to the conference’s call for papers, and by two poster sessions that each consisted of close to 40 different reports. This critical mass in terms of scientific content ensured a highly vibrant conference, in which leaders in the field had the opportunity to interact closely with early-career scientists.

  6. 20th CIRP International Conference on Life Cycle Engineering

    CERN Document Server

    Song, Bin; Ong, Soh-Khim

    2013-01-01

    This edited volume presents the proceedings of the 20th CIRP LCE Conference, which cover various areas in life cycle engineering such as life cycle design, end-of-life management, manufacturing processes, manufacturing systems, methods and tools for sustainability, social sustainability, supply chain management, remanufacturing, etc.

  7. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  8. Rhombohedrel Hybrid Crystal Semiconductor Device

    Data.gov (United States)

    National Aeronautics and Space Administration — Development of a new high speed and high efficiency hybrid crystal structure semiconductor device based on the the recent invention of rhombohedral hybrid crystal...

  9. Semiconductor radiation detectors. Device physics

    Energy Technology Data Exchange (ETDEWEB)

    Lutz, G. [Max-Planck-Institutes for Physics and Extraterrestrial Physics, Muenchen (Germany). Semiconductor Lab.

    2007-07-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  10. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  11. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  12. Semiconductor nanocrystals or quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 18; Issue 8. Various Quantum Mechanical Concepts for Confinements in Semiconductor Nanocrystals. Jayakrishna Khatei Karuna Kar Nanda. Classroom Volume 18 Issue 8 August 2013 pp 771-776 ...

  13. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  14. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  15. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  16. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  17. Fractal properties of nanostructured semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhanabaev, Z.Zh. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan); Grevtseva, T.Yu. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan)]. E-mail: kenwp@mail.ru

    2007-03-15

    A theory for the temperature and time dependence of current carrier concentration in semiconductors with different non-equilibrium nanocluster structure has been developed. It was shown that the scale-invariant fractal self-similar and self-affine laws can exist near by the transition point to the equilibrium state. Results of the theory have been compared to the experimental data from electrical properties of semiconductor films with nanoclusters.

  18. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  19. MUSME Conference

    CERN Document Server

    Martinez, Eusebio

    2015-01-01

    This volume contains the Proceedings of MUSME 2014, held at Huatulco in Oaxaca, Mexico, October 2014. Topics include analysis and synthesis of mechanisms; dynamics of multibody systems; design algorithms for mechatronic systems; simulation procedures and results; prototypes and their performance; robots and micromachines; experimental validations; theory of mechatronic simulation; mechatronic systems; and control of mechatronic systems. The MUSME symposium on Multibody Systems and Mechatronics was held under the auspices of IFToMM, the International Federation for Promotion of Mechanism and Machine Science, and FeIbIM, the Iberoamerican Federation of Mechanical Engineering. Since the first symposium in 2002, MUSME events have been characterised by the way they stimulate the integration between the various mechatronics and multibody systems dynamics disciplines, present a forum for facilitating contacts among researchers and students mainly in South American countries, and serve as a joint conference for the ...

  20. Conference Proceedings

    International Nuclear Information System (INIS)

    2002-01-01

    This volume contains the unedited proceedings of the Second Annual Conference on Managing Electricity Price Volatility. There were a total of eleven papers presented, dealing with a variety of issues affecting price volatility. Subjects treated included: new power generation development in Alberta; an analysis of electricity supply and demand to predict future price volatility; the effect of government intervention in the Alberta electricity market; risk management in volatile energy markets; an analysis of Alberta's capacity to supply its own internal electric power needs; the impact of increased electricity import and export capacity on price fluctuation in Alberta; improving market liquidity in Alberta; using weather derivatives to offset price risk; the impact of natural gas prices on electricity price volatility; capitalizing on advancements in online trading; and strategies for businesses to keep operating through times of price volatility. In most cases only overhead viewgraphs are available

  1. Survey of cryogenic semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  2. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    CERN Document Server

    Li, Simon

    2012-01-01

    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

  3. Cairo conference.

    Science.gov (United States)

    McMichael, A J

    1994-09-03

    The United Nations Conference on Population and Development in Cairo in September, 1994, will evoke criticism of the inability of governments to act quickly enough to avert demographic and environmental crises. Rapid population growth has clear implications for public health. Globally there now occur anthropogenic changes in atmospheric composition, the degradation of fertile lands and ocean fisheries, an accelerating loss of biodiversity, and the social and ecological problems of massive urbanization. In the future, per capita consumption levels will increase in burgeoning populations of developing countries, thus adding to the environmental impacts of overconsuming rich countries. By the end of the decade there will be over six billion people, of whom one half will live in cities. These demographic and environmental trends, if translated into climatic change, regional food shortages, and weakened ecosystems, would adversely affect human health. The World Health Organization is likely to concentrate only on accessible family planning and promotion of health for women and families. Continuing asymmetric child-saving aid, unaccompanied by substantial aid to help mobilize the social and economic resources needed to reduce fertility, may delay the demographic transition in poor countries and potentiate future public health disasters. As a result of recent reductions in fertility, even in Sub-Saharan Africa, average family sizes have been halved. Yet the demographic momentum will double population by 2050. The biosphere is a complex of ecosystems and, if unsustained, it could not fulfill the productive, cleansing, and protective functions on which life depends. The Cairo conference must therefore recognize that sustaining human health is a prime reason for concern about population growth and models of economic development.

  4. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  5. Amorphous Semiconductor Alloys

    Science.gov (United States)

    Madan, Arun

    1985-08-01

    Amorphous silicon (a-Si) based alloys have attracted a considerable amount of interest because of their applications in a wide variety of technologies. However, the major effort has concentrated on inexpensive photovoltaic device applications and has moved from a laboratory curiosity in the early 1970's to viable commercial applications in the 1980's. Impressive progress in this field has been made since the group at University of Dundee demonstrated that a low defect, device quality hydrogenated amorphous silicon (a-Si:H) 12 material could be produced using the radio frequency (r.f.) glow discharge in SiH4 gas ' and that the material could be doped n- and p-type.3 These results spurred a worldwide interest in a-Si based alloys, especially for photovoltaic devices which has resulted in a conversion efficiency approaching 12%. There is now a quest for even higher conversion efficiencies by using the multijunction cell approach. This necessitates the synthesis of new materials of differing bandgaps, which in principle amorphous semiconductors can achieve. In this article, we review some of this work and consider from a device and a materials point of view the hurdles which have to be overcome before this type of concept can be realized.

  6. Semiconductor film Cherenkov lasers

    Science.gov (United States)

    Walsh, John E.

    1994-12-01

    The technical achievements for the project 'Semiconductor Film Cherenkov Lasers' are summarized. Described in the fourteen appendices are the operation of a sapphire Cherenkov laser and various grating-coupled oscillators. These coherent radiation sources were operated over the spectral range extending from 3 mm down to 400 micrometers. The utility of various types of open, multi-grating resonators and mode-locked operation were also demonstrated. In addition to these experiments, which were carried out with a 10-100 kV pulse generator, a low-energy (3-3.6 MeV) Van de Graaff generator and a low-energy RF linac (2.8 MeV) were used to investigate the properties of continuum incoherent Smith-Purcell radiation. It was shown that levels of intensity comparable to the infrared beam lines on a synchrotron could be obtained and thus that grating-coupled sources are potentially an important new source for Fourier transform spectroscopy. Finally, a scanning electron microscope was adapted for investigating mu-electron-beam-driven far-infrared sources. At the close of the project, spontaneous emission over the 288-800 micrometers band had been observed. Intensity levels were in accord with expectations based on theory. One or more of the Appendices address these topics in detail.

  7. EDITORIAL: Oxide semiconductors

    Science.gov (United States)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  8. Manufacturing network evolution

    DEFF Research Database (Denmark)

    Yang, Cheng; Farooq, Sami; Johansen, John

    2011-01-01

    Purpose – This paper examines the effect of changes at the manufacturing plant level on other plants in the manufacturing network and also investigates the role of manufacturing plants on the evolution of a manufacturing network. Design/methodology/approach –The research questions are developed......, the complex phenomenon of a manufacturing network evolution is observed by combining the analysis of a manufacturing plant and network level. The historical trajectories of manufacturing networks that are presented in the case studies are examined in order to understand and determine the future shape...

  9. 75 FR 81643 - In the Matter of Certain Semiconductor Products Made by Advanced Lithography Techniques and...

    Science.gov (United States)

    2010-12-28

    ...: Taiwan Semiconductor Manufacturing, Co., Ltd. (Taiwan) (``TSMC''); and Samsung Electronics Co., Ltd. (South Korea) (``Samsung''). On December 8, 2010, the Commission determined not to review Order No. 10, an ID that terminated the investigation as against Samsung on the basis of a settlement agreement. On...

  10. Using the scanning electron microscope on the production line to assure quality semiconductors

    Science.gov (United States)

    Adolphsen, J. W.; Anstead, R. J.

    1972-01-01

    The use of the scanning electron microscope to detect metallization defects introduced during batch processing of semiconductor devices is discussed. A method of determining metallization integrity was developed which culminates in a procurement specification using the scanning microscope on the production line as a quality control tool. Batch process control of the metallization operation is monitored early in the manufacturing cycle.

  11. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  12. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    CERN Document Server

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  13. PREFACE: Euro-TMCS I: Theory, Modelling and Computational Methods for Semiconductors

    Science.gov (United States)

    Gómez-Campos, F. M.; Rodríguez-Bolívar, S.; Tomić, S.

    2015-05-01

    The present issue contains a selection of the best contributed works presented at the first Euro-TMCS conference (Theory, Modelling and Computational Methods for Semiconductors, European Session). The conference was held at Faculty of Sciences, Universidad de Granada, Spain on 28st-30st January 2015. This conference is the first European edition of the TMCS conference series which started in 2008 at the University of Manchester and has always been held in the United Kingdom. Four previous conferences have been previously carried out (Manchester 2008, York 2010, Leeds 2012 and Salford 2014). Euro-TMCS is run for three days; the first one devoted to giving invited tutorials, aimed particularly at students, on recent development of theoretical methods. On this occasion the session was focused on the presentation of widely-used computational methods for the modelling of physical processes in semiconductor materials. Freely available simulation software (SIESTA, Quantum Espresso and Yambo) as well as commercial software (TiberCad and MedeA) were presented in the conference by members of their development team, offering to the audience an overview of their capabilities for research. The second part of the conference showcased prestigious invited and contributed oral presentations, alongside poster sessions, in which direct discussion with authors was promoted. The scope of this conference embraces modelling, theory and the use of sophisticated computational tools in semiconductor science and technology. Theoretical approaches represented in this meeting included: Density Functional Theory, Semi-empirical Electronic Structure Methods, Multi-scale Approaches, Modelling of PV devices, Electron Transport, and Graphene. Topics included, but were not limited to: Optical Properties of Quantum Nanostructures including Colloids and Nanotubes, Plasmonics, Magnetic Semiconductors, Photonic Structures, and Electronic Devices. The Editors Acknowledgments: We would like to thank all

  14. Low Cost Lithography Tool for High Brightness LED Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Andrew Hawryluk; Emily True

    2012-06-30

    The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

  15. Strategic Roles of Manufacturing

    DEFF Research Database (Denmark)

    Yang, Cheng

    Addressing three development trends of manufacturing, this thesis aims to explore: (1) facing challenges on manufacturing (globalisation, knowledge-based manufacturing and servitisation of manufacturing), what kinds of roles does manufacturing play within industrial companies; (2) along with the ......Addressing three development trends of manufacturing, this thesis aims to explore: (1) facing challenges on manufacturing (globalisation, knowledge-based manufacturing and servitisation of manufacturing), what kinds of roles does manufacturing play within industrial companies; (2) along...... with the trend of globalisation, how do industrial companies develop their global manufacturing networks? These two questions are actually interlinked. On the one hand, facing increasing offshoring and outsourcing of production activities, industrial companies have to understand how to develop their global...... manufacturing networks. On the other hand, ongoing globalisation also brings tremendous impacts to post-industrial economies (e.g. Denmark). A dilemma therefore arises, i.e. whether it is still necessary to keep manufacturing in these post-industrial economies; if yes, what kinds of roles manufacturing should...

  16. Energy efficiency enhancements for semiconductors, communications, sensors and software achieved in cool silicon cluster project

    Science.gov (United States)

    Ellinger, Frank; Mikolajick, Thomas; Fettweis, Gerhard; Hentschel, Dieter; Kolodinski, Sabine; Warnecke, Helmut; Reppe, Thomas; Tzschoppe, Christoph; Dohl, Jan; Carta, Corrado; Fritsche, David; Tretter, Gregor; Wiatr, Maciej; Detlef Kronholz, Stefan; Mikalo, Ricardo Pablo; Heinrich, Harald; Paulo, Robert; Wolf, Robert; Hübner, Johannes; Waltsgott, Johannes; Meißner, Klaus; Richter, Robert; Michler, Oliver; Bausinger, Markus; Mehlich, Heiko; Hahmann, Martin; Möller, Henning; Wiemer, Maik; Holland, Hans-Jürgen; Gärtner, Roberto; Schubert, Stefan; Richter, Alexander; Strobel, Axel; Fehske, Albrecht; Cech, Sebastian; Aßmann, Uwe; Pawlak, Andreas; Schröter, Michael; Finger, Wolfgang; Schumann, Stefan; Höppner, Sebastian; Walter, Dennis; Eisenreich, Holger; Schüffny, René

    2013-07-01

    An overview about the German cluster project Cool Silicon aiming at increasing the energy efficiency for semiconductors, communications, sensors and software is presented. Examples for achievements are: 1000 times reduced gate leakage in transistors using high-fc (HKMG) materials compared to conventional poly-gate (SiON) devices at the same technology node; 700 V transistors integrated in standard 0.35 μm CMOS; solar cell efficiencies above 19% at cars Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  17. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  18. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  19. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  20. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  1. Selenium semiconductor core optical fibers

    Directory of Open Access Journals (Sweden)

    G. W. Tang

    2015-02-01

    Full Text Available Phosphate glass-clad optical fibers containing selenium (Se semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  2. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  3. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  4. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  5. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  6. Semiconductor device physics and simulation

    CERN Document Server

    Yuan, J S

    1998-01-01

    This volume provides thorough coverage of modern semiconductor devices -including hetero- and homo-junction devices-using a two-dimensional simulator (MEDICI) to perform the analysis and generate simulation results Each device is examined in terms of dc, ac, and transient simulator results; relevant device physics; and implications for design and analysis Two hundred forty-four useful figures illustrate the physical mechanisms and characteristics of the devices simulated Comprehensive and carefully organized, Semiconductor Device Physics and Simulation is the ideal bridge from device physics to practical device design

  7. Wide band gap semiconductor templates

    Energy Technology Data Exchange (ETDEWEB)

    Arendt, Paul N. (Los Alamos, NM); Stan, Liliana (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); DePaula, Raymond F. (Santa Fe, NM); Usov, Igor O. (Los Alamos, NM)

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  8. Appraising manufacturing location

    NARCIS (Netherlands)

    Steenhuis, H.J.; de Bruijn, E.J.

    2002-01-01

    International location of manufacturing activities is an issue for managers of manufacturing companies as well as public policy makers. For managers, the issue is relevant because international locations offer opportunities for lowering costs due to productivity improvements. For governments the

  9. Rapid thermal processing and beyond applications in semiconductor processing

    CERN Document Server

    Lerch, W

    2008-01-01

    Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging a

  10. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  11. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  12. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  13. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  14. Additive Manufacturing Infrared Inspection

    Science.gov (United States)

    Gaddy, Darrell; Nettles, Mindy

    2015-01-01

    The Additive Manufacturing Infrared Inspection Task started the development of a real-time dimensional inspection technique and digital quality record for the additive manufacturing process using infrared camera imaging and processing techniques. This project will benefit additive manufacturing by providing real-time inspection of internal geometry that is not currently possible and reduce the time and cost of additive manufactured parts with automated real-time dimensional inspections which deletes post-production inspections.

  15. Manufacturing in Denmark

    DEFF Research Database (Denmark)

    Hansen, Johannes; Boer, Henrike Engele Elisabeth; Boer, Harry

    This report compares the manufacturing strategies, practices, performances and improvement activities of 39 companies that are representative for the Danish assembly industry with those of 804 companies from 19 other countries. The data supporting this report were collected in 2013 and concern......: • Manufacturing strategies pursued and implemented between 2010 and 2012. • Performance improvements achieved during that period. • Actual manufacturing practices and performances as well as competitive priorities in 2012. • Manufacturing strategies pursued for the years 2010-2012....

  16. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  17. Anomalous lattice parameter of magnetic semiconductor alloys

    OpenAIRE

    CAETANO, Clovis; MARQUES, Marcelo; FERREIRA, Luiz G.; TELES, Lara K.

    2009-01-01

    The addition of transition metals (TM) to III-V semiconductors radically changes their electronic, magnetic and structural properties. In contrast to the conventional semiconductor alloys, the lattice parameter in magnetic semiconductor alloys, including the ones with diluted concentration (the diluted magnetic semiconductors - DMS), cannot be determined uniquely from the composition. By using first-principles calculations, we find a direct correlation between the magnetic moment and the anio...

  18. Manufacturing tolerant topology optimization

    DEFF Research Database (Denmark)

    Sigmund, Ole

    2009-01-01

    (dilated) structures compared to the intended topology. Examples are MEMS devices manufactured using etching processes, nano-devices manufactured using e-beam lithography or laser micro-machining and macro structures manufactured using milling processes. In the suggested robust topology optimization...

  19. Conference this! Lead Pipers compare conference experiences

    Directory of Open Access Journals (Sweden)

    Editorial Board

    2010-04-01

    Full Text Available As library travel budgets are increasingly slashed around the country, it’s a tough time for conference-going. In this group post, we compare notes about the conferences we’ve attended, which have been our favorites, and why. We hope this will generate creative ideas on good conferences (online or in-person to look forward to, and maybe offer [...

  20. Micro-laser assisted machining: the future of manufacturing silicon optics

    Science.gov (United States)

    Ravindra, Deepak; Kode, Sai Kumar; Stroshine, Chris; Morrison, Don; Mitchell, Mike

    2017-10-01

    A wide range of materials including metals and alloys, ceramics, glasses, semiconductors and composites are manufactured to meet service requirements to a given geometry, accuracy, finish and surface integrity. Metals and alloys in general are easier to machine because of their high fracture toughness, low hardness, non-directional bonding, low porosity, large strain to fracture and high impact energy. Non-metals, on the other hand, such as ceramics, semiconductors and optical crystals are characterized by covalent or ionic bonding, limited slip systems for plastic deformation, high hardness and low fracture toughness. It is due to these major differences that ceramics, semiconductors and optical crystals are considered more challenging to machine.

  1. European Metals Conference

    CERN Document Server

    Vereecken, Jean

    1991-01-01

    This volume contains the papers that will be presented at 'EMC '91 '-the European Metals Conference-to be held in Brussels, Belgium, from 15 to 20 September 1991, and organized by Benelux Metallurgie, GDMB (Gesellschaft Deutscher Metallhutten­ und Bergleute) and IMM (the Institution of Mining and Metallurgy). 'EMC '91' is the first of an intended major series organized at the European level with the aim of bringing together all those who are involved with the extraction and processing of non-ferrous metals-European metallurgists and their international colleagues-to provide them with the opportunity to exchange views on the state and evolution of their industry. The programme covers all the different aspects of the metallurgy of non-ferrous metals from mining to fabricated products. Particular attention is being paid to the European non -ferrous industry with respect to changes in demand, the technology used, pressures on the environment and the competitive position of manufacturers. The contributions of the...

  2. Advanced Manufacturing Technologies (AMT): Manufacturing Initiative Project

    Data.gov (United States)

    National Aeronautics and Space Administration — NASA supports the Advanced Manufacturing National Program Office (AMNPO). Hosted by the National Institute of Standards and Technology (NIST) the AMNPO is...

  3. Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt

    International Nuclear Information System (INIS)

    Pandey, R.K.

    2008-01-01

    The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: (1) wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; (2) n-type semiconductors; (3) they exhibit well defined magnetic hysteresis loops and (4) their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A and M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of

  4. Semiconductor technology program: Progress briefs

    Science.gov (United States)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  5. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...

  6. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  7. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  8. Review of semiconductor drift detectors

    Science.gov (United States)

    Gatti, Emilio; Rehak, Pavel

    2005-04-01

    A short review of semiconductor drift detectors is given. The emphasis is given to detectors intended for tracking of fast charged particles for experiments in particle physics and high energy heavy-ion physics. The use and performance of this kind of detector in past, present and future experiments is described together with the experience learned during the design, production and data taking phases.

  9. Atomistic Models of Amorphous Semiconductors

    NARCIS (Netherlands)

    Jarolimek, K.

    2011-01-01

    Crystalline silicon is probably the best studied material, widely used by the semiconductor industry. The subject of this thesis is an intriguing form of this element namely amorphous silicon. It can contain a varying amount of hydrogen and is denoted as a-Si:H. It completely lacks the neat long

  10. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  11. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  12. Manufacturing Planning Guide

    Science.gov (United States)

    Waid, Michael

    2011-01-01

    Manufacturing process, milestones and inputs are unknowns to first-time users of the manufacturing facilities. The Manufacturing Planning Guide aids in establishing expectations for both NASA and non-NASA facility customers. The potential audience for this guide includes both internal and commercial spaceflight hardware/software developers. It is intended to assist their project engineering personnel in manufacturing planning and execution. Material covered includes a roadmap of the manufacturing process, roles and responsibilities of facility and user, major milestones, facility capabilities, and inputs required by the facility. Samples of deliverables, products, and inputs necessary to define test scope, cost, and schedule are included as an appendix to the guide.

  13. Calculation of the thermal mode in semiconductor devices in conditions of their operation in semiconductor apparatuses

    OpenAIRE

    Сосков, Анатолій Георгійович; Глєбова, Марина Леонідівна; Сабалаєва, Наталія Олегівна; Форкун, Яна Борисівна

    2014-01-01

    The study of the temperature field of power semiconductor devices, operating in semiconductor apparatuses, either non-contact or hybrid was carried out in the paper.It was also shown that the main mode of the current load of power semiconductor devices, operating in semiconductor apparatuses is a pulse mode.Analytical method for calculating the values of the temperature rise in the structure of power semiconductor devices when subjected to a current pulse of arbitrary shape based on a model t...

  14. ACE - Manufacturer Identification Code (MID)

    Data.gov (United States)

    Department of Homeland Security — The ACE Manufacturer Identification Code (MID) application is used to track and control identifications codes for manufacturers. A manufacturer is identified on an...

  15. Institute of Industrial Engineers Asian Conference 2013

    CERN Document Server

    Tsao, Yu-Chung; Lin, Shi-Woei

    2013-01-01

    This book is based on the research papers presented during The Institute of Industrial Engineers Asian Conference 2013 held at Taipei in July 2013. It presents information on the most recent and relevant research, theories and practices in industrial and systems engineering. Key topics include: Engineering and Technology Management Engineering Economy and Cost Analysis Engineering Education and Training Facilities Planning and Management Global Manufacturing and Management Human Factors Industrial & Systems Engineering Education Information Processing and Engineering Intelligent Systems Manufacturing Systems Operations Research Production Planning and Control Project Management Quality Control and Management Reliability and Maintenance Engineering Safety, Security and Risk Management Supply Chain Management Systems Modeling and Simulation Large scale complex systems.

  16. Controlled growth of semiconductor crystals

    Science.gov (United States)

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  17. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  18. To conference or not to conference

    African Journals Online (AJOL)

    can travel throughout the world, from Cape to Cairo, from Jakarta to. Istanbul, from San Diego to Beijing, from Tashkent to Cancun, either to read articles published, international or national guidelines, or even to read the proceeds from meetings and conferences. Is there any real advantage of going to conferences in the era ...

  19. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  20. Semiconductor Strip Tracker Endcaps come to CERN

    CERN Multimedia

    P. Bell

    The first few months of 2006 saw the delivery to CERN of the final components of the ATLAS Semi-Conductor Tracker (SCT), namely the completed SCT end-caps. Regular ATLAS eNews readers will recall that the SCT barrel arrived in sections in 2005 and was assembled later that year (see the April 2005 and December 2005 issues, respectively.) And as reported in this issue of the eNews, the barrel SCT has recently been integrated with the barrel Transition Radiation Tracker. The end-caps were constructed in Liverpool (side C) and NIKHEF (side A), using components manufactured at many different sites across the world. End-cap C left Liverpool on Monday 20 February and arrived at CERN after a two-day journey by road and through the Channel Tunnel. Accelerations in all three dimensions were monitored during the trip, as was temperature and humidity inside the container; all values remained within pre-specified safe ranges. The end-cap was visually inspected upon arrival, with no obvious damage being seen. Subsequent ...

  1. Modulation spectroscopy characterization of MOCVD semiconductors and semiconductors structures

    Science.gov (United States)

    Pollak, Fred H.; Shen, H.

    1989-11-01

    This paper reviews recent developments in the use of contactless modulation spectroscopy to yield important information about MOCVD growth as well as the properties of MOCVD fabricated semiconductors and semiconductor microstructures. The method of reflectance difference spectroscopy can be used to gain significant insights into chemical and structural parameters during actual growth conditions. The electromodulation technique of photoreflectance (PR) probes the electronic states of the material. It has many applications for in-situ post-growth characterization of crystal quality, very thin Ga 1-xAl xAs/GaAs epitaxial layers, Ga 1-xAl xAs alloy composition, deep trap states, surface electric fields and carrier concentrations, lattice-mismatch strain, etc, as well as the determination of relevant parameters of heterojunction structures. In addition, recent PR experiments at 600°C on GaAs and Ga 0.82Al 0.18As show potential for in-situ monitoring during growth.

  2. High-z semiconductor nuclear radiation detectors for room-temperature gamma-ray spectrometry

    International Nuclear Information System (INIS)

    Bornand, Bernard; Friant, Alain.

    1978-09-01

    A bibliographical review (182 articles of periodicals, conferences, reports, thesis and french patents) is presented, as addendum of the report CEA-BIB-210 (1974) on high-Z semiconductor compounds used as materials for the gamma and X-ray detection and spectrometry. This publication reviews issues from 1974 to 1977. References and summaries (in french) are incorporated into 182 bibliograhical notices. Index for authors, corporate authors, documents and periodicals, and subjects is included [fr

  3. INFCE plenary conference documents

    International Nuclear Information System (INIS)

    This document consists of the reports to the First INFCE Plenary Conference (November 1978) by the Working Groups a Plenary Conference of its actions and decisions, the Communique of the Final INFCE Plenary Conference (February 1980), and a list of all documents in the IAEA depository for INFCE

  4. COAL Conference Poster

    OpenAIRE

    Brown, Taylor Alexander; McGibbney, Lewis John

    2017-01-01

    COAL Conference Poster This archive contains the COAL conference poster for the AGU Fall Meeting 2017 by Taylor Alexander Brown. The Inkscape SVG source is available at https://github.com/capstone-coal/coal-conference-poster/ under the Creative Commons Attribution-ShareAlike 4.0 International license.

  5. Evolutionary fuzzy ARTMAP neural networks for classification of semiconductor defects.

    Science.gov (United States)

    Tan, Shing Chiang; Watada, Junzo; Ibrahim, Zuwairie; Khalid, Marzuki

    2015-05-01

    Wafer defect detection using an intelligent system is an approach of quality improvement in semiconductor manufacturing that aims to enhance its process stability, increase production capacity, and improve yields. Occasionally, only few records that indicate defective units are available and they are classified as a minority group in a large database. Such a situation leads to an imbalanced data set problem, wherein it engenders a great challenge to deal with by applying machine-learning techniques for obtaining effective solution. In addition, the database may comprise overlapping samples of different classes. This paper introduces two models of evolutionary fuzzy ARTMAP (FAM) neural networks to deal with the imbalanced data set problems in a semiconductor manufacturing operations. In particular, both the FAM models and hybrid genetic algorithms are integrated in the proposed evolutionary artificial neural networks (EANNs) to classify an imbalanced data set. In addition, one of the proposed EANNs incorporates a facility to learn overlapping samples of different classes from the imbalanced data environment. The classification results of the proposed evolutionary FAM neural networks are presented, compared, and analyzed using several classification metrics. The outcomes positively indicate the effectiveness of the proposed networks in handling classification problems with imbalanced data sets.

  6. REVIEW OF FLEXIBLE MANUFACTURING SYSTEM BASED ON MODELING AND SIMULATION

    Directory of Open Access Journals (Sweden)

    SAREN Sanjib Kumar

    2016-05-01

    Full Text Available This paper focused on the literature survey of the use of flexible manufacturing system design and operation problems on the basis of simulation tools and their methodology which has been widely used for manufacturing system design and analysis. During this period, simulation has been proving to be an extremely useful analysis and optimization tool, and many articles, papers, and conferences have focused directly on the topic. This paper presents a scenario the use of simulation tools and their methodology in flexible manufacturing system from a period 1982 to 2015.

  7. Metal oxide semiconductor thin-film transistors for flexible electronics

    Science.gov (United States)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  8. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  9. Proceedings of the 2. CDEN design conference

    International Nuclear Information System (INIS)

    Yellowley, I.; Gu, P.

    2005-01-01

    The Canadian Design Engineering Network (CDEN) promotes best practices in engineering design. This annual conference, which provided a forum to exchange ideas and experiences in engineering design, included 2 roundtable discussions on design and innovation in Canadian engineering schools, and design considerations in the accreditation of engineering programs. The conference also featured a student design competition. The main topics of the conference were design education, design for innovation and design practices. Within the topic of design education, the following themes were addressed: design curriculum; design projects and cases; emerging design education tools and techniques; evaluation metrics and techniques in design education; web-based education resources; and, multi-disciplinary design education. Within the topic of design for innovation, the following themes were addressed: technological innovation and creativity; product design; process design; adaptable design; platform and product architecture design; modular design; life cycle issues, reliability, serviceability and disposal/recycling; sustainable design and development; design for manufacturing, construction, services, and the environment; design for life, health and fitness; design methodologies, tools and techniques; distributed design activities and teams; and, web-based design and collaborative design and tools. Within the topic of design practice, the following themes were addressed: engineering, procurement and construction industry; design in auto manufacturing, aerospace industry and high-tech industry; engineering project management; design for sustainability and environmental practices; professional development in engineering design; and, current and future industrial practice trends. The conference featured 30 presentations, of which 5 have been catalogued separately for inclusion in this database. refs., tabs., figs

  10. Manufacturing ontology through templates

    Directory of Open Access Journals (Sweden)

    Diciuc Vlad

    2017-01-01

    Full Text Available The manufacturing industry contains a high volume of knowhow and of high value, much of it being held by key persons in the company. The passing of this know-how is the basis of manufacturing ontology. Among other methods like advanced filtering and algorithm based decision making, one way of handling the manufacturing ontology is via templates. The current paper tackles this approach and highlights the advantages concluding with some recommendations.

  11. Manufacturing tolerant topology optimization

    OpenAIRE

    Sigmund, Ole

    2009-01-01

    In this paper we present an extension of the topology optimization method to include uncertainties during the fabrication of macro, micro and nano structures. More specifically, we consider devices that are manufactured using processes which may result in (uniformly) too thin (eroded) or too thick (dilated) structures compared to the intended topology. Examples are MEMS devices manufactured using etching processes, nano-devices manufactured using e-beam lithography or laser micro-machining an...

  12. Measuring Manufacturing Innovativeness

    DEFF Research Database (Denmark)

    Blichfeldt, Henrik; Knudsen, Mette Præst

    2017-01-01

    Globalization and customization increases the pressure on manufacturing companies, and the ability to provide innovativeness is a potential source of competitive advantage. This paper positions the manufacturing entity in the innovation process, and investigates the relation between innovation vers...... technology and organizational concepts. Based on Danish survey data from the European Manufacturing Survey (EMS-2015) this paper finds that there is a relation between innovative companies, and their level of technology and use of organizational concepts. Technology and organizational concepts act...

  13. Hypersonic modes in nanophononic semiconductors.

    Science.gov (United States)

    Hepplestone, S P; Srivastava, G P

    2008-09-05

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  14. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  15. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  16. 7th Czechoslovak spectroscopic conference and VIIIth CANAS (Conference on analytical atomic spectroscopy). Abstracts. Vol. 2

    International Nuclear Information System (INIS)

    1984-01-01

    The conference on spectroscopy held in Ceske Budejovice on June 18-22, 1984, proceeded in three sessions: atomic spectroscopy, molecular spectroscopy and special spectroscopic techniques. In the molecular spectroscopy session, 81 papers were read of which 12 were inputted in INIS. The subject of inputted papers was the use of NMR for the analysis of organic compounds and for the study of radiation defects in semiconductors, and the use of infrared spectroscopy for the analysis of nuclear and irradiated materials. (J.P.)

  17. Manufacturing Demonstration Facility (MDF)

    Data.gov (United States)

    Federal Laboratory Consortium — The U.S. Department of Energy Manufacturing Demonstration Facility (MDF) at Oak Ridge National Laboratory (ORNL) provides a collaborative, shared infrastructure to...

  18. Advanced Manufacturing Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Advanced Manufacturing Laboratory at the University of Maryland provides the state of the art facilities for realizing next generation products and educating the...

  19. Composite Structures Manufacturing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — The Composite Structures Manufacturing Facility specializes in the design, analysis, fabrication and testing of advanced composite structures and materials for both...

  20. Semiconductor Nanowires: Epitaxy and Applications

    OpenAIRE

    Mårtensson, Thomas

    2008-01-01

    Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their unique properties have been exploited in fields such as electronics, photonics, sensors and the life sciences. In this work, the epitaxial growth of nanowires and their applications were studied. Heteroepitaxial growth of III-V nanowires on silicon substrates was demonstrated. This may enable direct band gap materials for optoelectronic devices, as well as high-mobility, low-contact resis...

  1. Quantum correlations in semiconductor microcavities

    Science.gov (United States)

    Kira, M.; Hoyer, W.; Koch, S. W.; Brick, P.; Ell, C.; Hübner, M.; Khitrova, G.; Gibbs, H. M.

    2003-10-01

    The quantum mechanical nature of the light field in semiconductor microcavities leads to non-classical coupling effects between photons and electron-hole excitations. It is shown that these quantum correlations give rise to characteristic corrections of the semiclassical light-matter coupling dynamics. Examples of quantum correlation signatures include entanglement effects in the probe reflection of a microcavity system and squeezing in the incoherent emission.

  2. Modeling of Microwave Semiconductor Diodes

    Directory of Open Access Journals (Sweden)

    Z. Raida

    2008-09-01

    Full Text Available The paper deals with the multi-physical mode-ling of microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equati-ons are summarized, and modeling issues are discussed. The simulations of the Gunn Effect in transferred electron devices and the carrier injection effect in PIN diodes are investigated and discussed. The analysis was performed in COMSOL Multiphysics using the finite element method.

  3. Modeling of Microwave Semiconductor Diodes

    OpenAIRE

    Pokorny, M.; Raida, Zbyněk

    2008-01-01

    The paper deals with the multi-physical mode-ling of microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equati-ons are summarized, and modeling issues are discussed. The simulations of the Gunn Effect in transferred electron devices and the carrier injection effect in PIN diodes are investigated and discussed. The analysis was performed in COMSOL Multiphysics using the finite element method.

  4. International Conference on Physics

    CERN Document Server

    2016-01-01

    OMICS International, (conference series) the World Class Open Access Publisher and Scientific Event Organizer is hosting “International Conference on physics” which is going to be the biggest conference dedicated to Physics. The theme “Highlighting innovations and challenges in the field of Physics” and it features a three day conference addressing the major breakthroughs, challenges and the solutions adopted. The conference will be held during June 27-29, 2016 at New Orleans, USA. Will be published in: http://physics.conferenceseries.com/

  5. Optoelectronics with 2D semiconductors

    Science.gov (United States)

    Mueller, Thomas

    2015-03-01

    Two-dimensional (2D) atomic crystals, such as graphene and layered transition-metal dichalcogenides, are currently receiving a lot of attention for applications in electronics and optoelectronics. In this talk, I will review our research activities on electrically driven light emission, photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, WSe2 monolayer p-n junctions formed by electrostatic doping using a pair of split gate electrodes, type-II heterojunctions based on MoS2/WSe2 and MoS2/phosphorene van der Waals stacks, 2D multi-junction solar cells, and 3D/2D semiconductor interfaces will be presented. Upon optical illumination, conversion of light into electrical energy occurs in these devices. If an electrical current is driven, efficient electroluminescence is obtained. I will present measurements of the electrical characteristics, the optical properties, and the gate voltage dependence of the device response. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. A model will be presented that reproduces our experimental findings, such as the dependence on optical power and gate voltage. We envision that the efficient photon conversion and light emission, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.

  6. Identification of defects in semiconductors

    CERN Document Server

    Stavola, Michael; Weber, Eicke R; Stavola, Michael

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this traditi...

  7. Manufacturing road map for tissue engineering and regenerative medicine technologies.

    Science.gov (United States)

    Hunsberger, Joshua; Harrysson, Ola; Shirwaiker, Rohan; Starly, Binil; Wysk, Richard; Cohen, Paul; Allickson, Julie; Yoo, James; Atala, Anthony

    2015-02-01

    The Regenerative Medicine Foundation Annual Conference held on May 6 and 7, 2014, had a vision of assisting with translating tissue engineering and regenerative medicine (TERM)-based technologies closer to the clinic. This vision was achieved by assembling leaders in the field to cover critical areas. Some of these critical areas included regulatory pathways for regenerative medicine therapies, strategic partnerships, coordination of resources, developing standards for the field, government support, priorities for industry, biobanking, and new technologies. The final day of this conference featured focused sessions on manufacturing, during which expert speakers were invited from industry, government, and academia. The speakers identified and accessed roadblocks plaguing the field where improvements in advanced manufacturing offered many solutions. The manufacturing sessions included (a) product development toward commercialization in regenerative medicine, (b) process challenges to scale up manufacturing in regenerative medicine, and (c) infrastructure needs for manufacturing in regenerative medicine. Subsequent to this, industry was invited to participate in a survey to further elucidate the challenges to translation and scale-up. This perspective article will cover the lessons learned from these manufacturing sessions and early results from the survey. We also outline a road map for developing the manufacturing infrastructure, resources, standards, capabilities, education, training, and workforce development to realize the promise of TERM. ©AlphaMed Press.

  8. Facilitating Learning at Conferences

    DEFF Research Database (Denmark)

    Ravn, Ib; Elsborg, Steen

    2011-01-01

    The typical conference consists of a series of PowerPoint presentations that tend to render participants passive. Students of learning have long abandoned the transfer model that underlies such one-way communication. We propose an al-ternative theory of conferences that sees them as a forum...... for learning, mutual inspiration and human flourishing. We offer five design principles that specify how conferences may engage participants more and hence increase their learning. In the research-and-development effort reported here, our team collaborated with conference organizers in Denmark to introduce...... and facilitate a variety of simple learning techniques at thirty one- and two-day conferences of up to 300 participants each. We present ten of these techniques and data evaluating them. We conclude that if conference organizers allocate a fraction of the total conference time to facilitated processes...

  9. Conference proceedings of the 4. international conference on CANDU fuel. V. 1,2

    International Nuclear Information System (INIS)

    1995-01-01

    These proceedings contain the full texts of all 65 papers presented at the 4th International Conference on CANDU fuel. As such, they represent an update on the state-of-the-art in such important CANDU fuel topics as International Development Programs and Operating Experience with CANDU fuel, Performance Assessments and Fuel Behavior Modeling, Fuel Properties, Licensing and Accident Analyses for CANDU fuel, Design, Testing and Manufacturing, and Advanced Fuel Designs. The large number of papers required the use of parallel sessions for the first time at a CANDU Fuel Conference

  10. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  11. International Conference on Nano-electronics, Circuits & Communication Systems

    CERN Document Server

    2017-01-01

    This volume comprises select papers from the International Conference on Nano-electronics, Circuits & Communication Systems(NCCS). The conference focused on the frontier issues and their applications in business, academia, industry, and other allied areas. This international conference aimed to bring together scientists, researchers, engineers from academia and industry. The book covers technological developments and current trends in key areas such as VLSI design, IC manufacturing, and applications such as communications, ICT, and hybrid electronics. The contents of this volume will prove useful to researchers, professionals, and students alike.

  12. Improving Project Manufacturing Coordination

    Directory of Open Access Journals (Sweden)

    Korpivaara Ville

    2014-09-01

    Full Text Available The objective of this research is to develop firms’ project manufacturing coordination. The development will be made by centralizing the manufacturing information flows in one system. To be able to centralize information, a deep user need assessment is required. After user needs have been identified, the existing system will be developed to match these needs. The theoretical background is achieved through exploring the literature of project manufacturing, development project success factors and different frameworks and tools for development project execution. The focus of this research is rather in customer need assessment than in system’s technical expertise. To ensure the deep understanding of customer needs this study is executed by action research method. As a result of this research the information system for project manufacturing coordination was developed to respond revealed needs of the stakeholders. The new system improves the quality of the manufacturing information, eliminates waste in manufacturing coordination processes and offers a better visibility to the project manufacturing. Hence it provides a solid base for the further development of project manufacturing.

  13. Modern manufacturing engineering

    CERN Document Server

    2015-01-01

    This book covers recent research and trends in Manufacturing Engineering. The chapters emphasize different aspects of the transformation from materials to products. It provides the reader with fundamental materials treatments and the integration of processes. Concepts such as green and lean manufacturing are also covered in this book.

  14. AINSE's 40th anniversary conference. Conference handbook

    International Nuclear Information System (INIS)

    1998-01-01

    Highlights of 40 years of activity of the Australian Institute of Nuclear Science and Engineering (AINSE) were the main focus of this conference. Topics covered include nuclear physics, plasma physics, radiation chemistry, radiation biology, neutron diffraction, nuclear techniques of analysis and other relevant aspects of nuclear science and technology. The conference handbook contains the summaries of the 78 papers and posters presented and the list of participants

  15. Industrial science and technology research and development project of university cooperative type in fiscal 2000. Report on achievements in semiconductor device manufacturing processes using Cat-CVD method (Development of technology to rationalize energy usage); 2000 nendo daigaku renkeigata sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The catalytic chemical vapor deposition (Cat-CVD) method is a low-temperature thin film depositing technology that can achieve improvement in quality of semiconductor thin films and can perform inexpensive film deposition in a large area. This paper summarizes the achievements in fiscal 2000 in the demonstrative research and development theme of the present project, centering on the following five areas: 1) discussions on application of the Cat-CVD method to the mass production process for gallium arsenide integrated circuits, 2) studies on the possibility to apply the Cat-CVD method to the process to fabricate nitrided silicon protective film for ferroelectric memory devices, 3) formation of nitrided silicon films for silicon integrated circuits by means of the Cat-CVD method, and development of a chamber cleaning technology, 4) fabrication of high-mobility poly-crystalline silicon thin film transistors formed by using the Cat-CVD method and large particle size poly-crystalline silicon films by using the catalytic chemical sputtering process, and 5) discussions on properties of amorphous silicon thin film transistors formed by using the Cat-CVD method and formation of large area films by using a catalyst integrated shower head. (NEDO)

  16. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  17. Manufacturing of lasers for DWDM systems

    Science.gov (United States)

    Campbell, Kevin T.; Robertson, Alexander J., Jr.; Wetzel, Steven J.

    1999-11-01

    The evolution of dense wavelength division multiplexing (DWDM) has allowed service provides a convenient and cost effective method to dramatically increase transmission capacity over existing and new fiber network systems. As the demand for bandwidth continues to increase, systems designers are responding by increasing both the number of channels and the data rates. This trend has placed considerable pressure on many of the underlying system components. One component that has been particularly challenged by this trend is the manufacture of semiconductor lasers. This paper reviews the technical and logistical challenges faced in the high volume manufacture of lasers to support DWDM systems. As the product portfolio continues to expand, precise execution and team work among multiple organizations is required to assure reliable shipping performance. Production scheduling and manufacturing operations must work closely to continuously re-prioritize the work in process in response to constantly changing channel demand and yield fluctuations. Wavelength prediction models must be developed that correlate in-process parameters to final device wavelength. These models are then applied to both in-process specification targeting and inventory management. Once the in-process specifications are properly targeted, the challenge moves to the fabrication processes, where processes are pushed to the limits of their control. Underpinning the entire effort must be an information management system in which parametric data is collected, wavelength prediction models are executed, and work in process inventory is controlled with respect to the final output volume and wavelength distribution.

  18. Roadmap on semiconductor-cell biointerfaces

    Science.gov (United States)

    Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

    2018-05-01

    This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

  19. 10th International Conference Mechatronics

    CERN Document Server

    Jabloński, Ryszard

    2014-01-01

    Mechatronics, as the integrating framework of mechanical engineering, electrical engineering, computer technology, control engineering and automation forms a crucial part in the design, manufacture and maintenance of a wide range of engineering products and processes. The mechatronics itself changes rapidly in last decade, from original mixture of subfields into original approach in engineering as a technical discipline. The book you are holding is aimed to help the reader to orient in this evolving field of science and technology. „Mechatronics 2013: Recent Technological and Scientific Advances“ is the fourth volume following the previous editions in 2007, 2009 and 2011, providing the comprehensive and accessible coverage of advances in mechatronics presented on the 10th International Conference Mechatronics 2013, hosted this year at the Brno University of Technology, Czech Republic. The contributions, that passed the thorough review process, give an insight into current trends in research and developmen...

  20. 11th International Conference Mechatronics

    CERN Document Server

    Brezina, Tomas

    2016-01-01

    Focusing on the most rapidly changing areas of mechatronics, this book discusses signals and system control, mechatronic products, metrology and nanometrology, automatic control & robotics, biomedical engineering, photonics, design manufacturing and testing of MEMS. It is reflected in the list of contributors, including an international group of 302 leading researchers representing 12 countries. The book is intended for use in academic, government and industry R&D departments, as an indispensable reference tool for the years to come. Thid volume can serve a global community as the definitive reference source in Mechatronics. The book comprises carefully selected 93 contributions presented at the 11th International Conference Mechatronics 2015, organized by Faculty of Mechatronics, Warsaw University of Technology, on September 21-23, in Warsaw, Poland. .

  1. Porous and Nanoporous Semiconductors and Emerging Applications

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2006-01-01

    Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

  2. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  3. Emission and Absorption Entropy Generation in Semiconductors

    DEFF Research Database (Denmark)

    Reck, Kasper; Varpula, Aapo; Prunnila, Mika

    2013-01-01

    While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

  4. Scanning electron microscopy of semiconductor materials

    International Nuclear Information System (INIS)

    Bresse, J.F.; Dupuy, M.

    1978-01-01

    The use of scanning electron microscopy in semiconductors opens up a large field of use. The operating modes lending themselves to the study of semiconductors are the induced current, cathodoluminescence and the use of the potential contrast which can also be applied very effectively to the study of the devices (planar in particular). However, a thorough knowledge of the mechanisms of the penetration of electrons, generation and recombination of generated carriers in a semiconductor is necessary in order to attain a better understanding of the operating modes peculiar to semiconductors [fr

  5. Semiconductor power devices physics, characteristics, reliability

    CERN Document Server

    Lutz, Josef; Scheuermann, Uwe; De Doncker, Rik

    2011-01-01

    Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are esse

  6. 18th European Conference on Mathematics for Industry

    CERN Document Server

    Capasso, Vincenzo; Nicosia, Giuseppe; Romano, Vittorio

    2016-01-01

    This book presents a collection of papers emphasizing applications of mathematical models and methods to real-world problems of relevance for industry, life science, environment, finance, and so on. The biannual Conference of ECMI (the European Consortium of Mathematics in Industry) held in 2014 focused on various aspects of industrial and applied mathematics. The five main topics addressed at the conference were mathematical models in life science, material science and semiconductors, mathematical methods in the environment, design automation and industrial applications, and computational finance. Several other topics have been treated, such as, among others, optimization and inverse problems, education, numerical methods for stiff pdes, model reduction, imaging processing, multi physics simulation, mathematical models in textile industry. The conference, which brought together applied mathematicians and experts from industry, provided a unique opportunity to exchange ideas, problems and methodologies...

  7. Ion implantation in semiconductor bodies

    International Nuclear Information System (INIS)

    Badawi, M.H.

    1984-01-01

    Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

  8. Quantum Optical Effects in Semiconductors

    Science.gov (United States)

    Hoyer, W.; Kira, M.; Koch, S. W.

    Quantum optical effects in semiconductors are studied using a density-matrix approach which takes into account the many-body Coulomb interaction among the charge carriers, coupling to lattice vibrations, and the quantum nature of light. The theory provides a consistent set of equations which is used to compute photoluminescence spectra, predict the emission of squeezed light, investigate correlations between photons emitted by quantum-well structures, and to show examples where light-matter entanglement influences experiments done with classical optical fields.

  9. Bistable amphoteric centers in semiconductors

    International Nuclear Information System (INIS)

    Nikitina, A. G.; Zuev, V. V.

    2008-01-01

    It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U - centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach

  10. Trace analysis of semiconductor materials

    CERN Document Server

    Cali, J Paul; Gordon, L

    1964-01-01

    Trace Analysis of Semiconductor Materials is a guidebook concerned with procedures of ultra-trace analysis. This book discusses six distinct techniques of trace analysis. These techniques are the most common and can be applied to various problems compared to other methods. Each of the four chapters basically includes an introduction to the principles and general statements. The theoretical basis for the technique involved is then briefly discussed. Practical applications of the techniques and the different instrumentations are explained. Then, the applications to trace analysis as pertaining

  11. Optoelectronic properties of semiconductor nanostructures

    Science.gov (United States)

    Maher, Kristin Nicole

    Semiconductor nanostructures have unique optical and electronic properties that have inspired research into their technological applications and basic science. This thesis presents approaches to the fabrication and characterization of optoelectronic devices incorporating individual semiconductor nanostructures. Nanowires of the II-VI semiconductors CdSe and CdS were synthesized using nanoparticle-catalysed solution-liquid-solid growth. Single-component nanowires and heterostructure nanowires with axial compositional modulation were generated using this method. Individual nanowires and nanocrystals were then incorporated into devices with a three-terminal field-effect transistor geometry. An experimental platform was developed which allows for simultaneous electrical characterization of devices and measurement of their optical properties. This setup enables the measurement of spatially and spectrally resolved electroluminescence (EL) and photoluminescence (PL) from individual nanostructures and nanostructure devices. It also allows the measurement of photon coincidence histograms for emitted light and the acquisition of photocurrent images via laser scanning microscopy. Electroluminescence was observed from individual CdSe nanocrystals contacted by gold electrodes. Concomitant transport measurements at low temperature showed clear evidence of Coulomb blockade at low bias voltage, with light only emitted from devices exhibiting asymmetric tunnel couplings between the nanocrystal and electrodes. Combined analyses of the data indicate that the resistances of the tunnel barriers are bias voltage dependent and that light emission results from the inelastic scattering of tunneling electrons. Three-terminal devices incorporating individual CdSe nanoNvires exhibited EL localized near the positively-biased electrode. Characterization of these devices by scanning photocurrent microscopy (SPCM) and Kelvin probe microscopy (KPM) indicates that while there are n-type Schottky

  12. Chaotic bursting in semiconductor lasers

    Science.gov (United States)

    Ruschel, Stefan; Yanchuk, Serhiy

    2017-11-01

    We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

  13. Institutional Support, Technological Capabilities and Domestic Linkages in the Semiconductor Industry in Singapore

    OpenAIRE

    Patarapong INTARAKUMNERD; Pun-Arj CHAIRATANA; Preeda CHAYANAJIT

    2015-01-01

    Although Thailand’s electronics industry has been considered as one of strategic sectors, the evidence in this article shows that it is dominated by midstream and downstream activities. Despite accounting for a quarter of electronics exports, semiconductors manufacturing is confined to low value added activities. The lack of industrial policy has restricted technological upgrading in the industry. Upgrading efforts made by both public and private initiatives have so far failed. The case studi...

  14. The Current State and Future Development of MOT Education for Semiconductor Engineers

    Science.gov (United States)

    Imamura, Yoichi; Hashizume, Tsuneo; Uno, Tadashi

    In this paper, the results of a preliminary survey on MOT conducted by a questionnaire are described so as to better deploy MOT education for SoC development engineers working for client companies of a consortium company established by eleven major Japanese semiconductor manufacturers. An overview of assessments of MOT is given, and the current state of MOT education supported by the consortium is documented, and a specific deployment plan is suggested.

  15. New strategic roles of manufacturing

    DEFF Research Database (Denmark)

    Yang, Cheng; Johansen, John; Boer, Harry

    2008-01-01

    of manufacturing playing new strategic roles. Backward, forward and lateral interactive support are suggested to explicate how manufacturing can realize its new strategic roles. Finally, four new strategic roles of manufacturing are suggested. They are: innovation manufacturing, ramp-up manufacturing, primary...

  16. 77 FR 10373 - Greenhouse Gas Reporting Program: Electronics Manufacturing: Revisions to Heat Transfer Fluid...

    Science.gov (United States)

    2012-02-22

    ... proposed rule, the EPA understands that emissions from the non-HTF applications would make up a small... Semiconductor, photovoltaic (solid- state) device manufacturing facilities. 334419 Liquid Crystal Display (LCD... voluntary consensus standards bodies. NTTAA directs the EPA to [[Page 10380

  17. International Cryocooler Conference

    CERN Document Server

    Cryocoolers 13

    2005-01-01

    This is the 13th volume in the conference series. Over the years the International Cryocoolers Conference has become the preeminent worldwide conference for the presentation of the latest developments and test experiences with cryocoolers. The typical applications of this technology include cooling space and terrestrial infrared focal plane arrays, space x-ray detectors, medical applications, and a growing number of high-temperature super-capacitor applications.

  18. Micro/Nano manufacturing

    DEFF Research Database (Denmark)

    Tosello, Guido

    2017-01-01

    Micro- and nano-scale manufacturing has been the subject of an increasing amount of interest and research effort worldwide in both academia and industry over the past 10 years.Traditional (MEMS) manufacturing, but also precision manufacturing technologies have been developed to cover micro......-scale dimensions and accuracies. Furthermore, these fundamentally different technology ecosystems are currently combined in order to exploit strengths of both platforms. One example is the use of lithography-based technologies to establish nanostructures that are subsequently transferred to 3D geometries via...

  19. Competitive Manufacturing Dynamics

    DEFF Research Database (Denmark)

    Rymaszewska, Anna; Christensen, Irene; Karlsson, Christer

    to constantly improve this process in terms of time to volume, according to predefined cost and quality measures. The importance of the success of this process can lead to a significant creation of competitive advantage. This paper addresses the challenges of the manufacturing ramp-up process in the context......The increasing complexity of business environments and the pressure for organizations on delivering new products faster while maintaining the superior quality of their products, has forced manufacturing organizations to rethink their operations. Managers responsible for manufacturing ramp-up need...

  20. Proceedings of the fifth international conference on CANDU fuel. V.1,2

    Energy Technology Data Exchange (ETDEWEB)

    Lau, J.H. [ed.

    1997-07-01

    The First International Conference on CANDU Fuel was held in Chalk River in 1986. The CANDU Fuel community has gathered every three years since. The papers presented include topics on international experience, CANFLEX fuel bundles, Fuel design, Fuel modelling, Manufacturing and Quality assurance, Fuel performance and Safety, Fuel cycles and Spent Fuel management. Volume One was published in advance of the conference and Volume Two was printed after the conference.

  1. Proceedings of the fifth international conference on CANDU fuel. V.1,2

    International Nuclear Information System (INIS)

    Lau, J.H.

    1997-01-01

    The First International Conference on CANDU Fuel was held in Chalk River in 1986. The CANDU Fuel community has gathered every three years since. The papers presented include topics on international experience, CANFLEX fuel bundles, Fuel design, Fuel modelling, Manufacturing and Quality assurance, Fuel performance and Safety, Fuel cycles and Spent Fuel management. Volume One was published in advance of the conference and Volume Two was printed after the conference

  2. [Feasibility study of CdTe Semiconductor detector for gamma camera--evaluation of planar images].

    Science.gov (United States)

    Takayama, T; Nakamura, N; Motomura, N; Mori, I; Ozaki, T; Ohno, R

    2000-05-01

    To evaluate the performance of a semiconductor detector for use in a gammacamera system, we assembled a detector with a small field of view--1 inch x 1 inch and 1 inch x 2 inch--made from CdTe (Cadmium telluride). We then compared the planar images and energy resolution of the resulting detectors against those of a conventional gammacamera. Pixel pitch of the detector was 1.6 mm x 1.6 mm, and was manufactured by Acrorad Corporation. Average FWHM of the energy spectrum for the semiconductor detector was 5.11% (SD: 0.80%, Best: 3.26%, Worst: 6.68%). The planar images obtained were of a letter phantom made from pieces of lead and of an IMP brain phantom. Since the field of view of the semiconductor detector was small, the image of the IMP brain phantom was acquired by moving the semiconductor over the collimated detector module until the area of the entire phantom was covered. The images from the semiconductor assembly were compared with those from a conventional gammacamera using the same conditions, and it was found that visual image quality was superior to those of the conventional camera system.

  3. Game Analysis of Determinants of Stability of Semiconductor Modular Production Networks

    Directory of Open Access Journals (Sweden)

    Wei He

    2014-07-01

    Full Text Available In today’s rapidly changing environment, semiconductor manufacturers compete more in the area of modular production networks. However, the instability of semiconductor modular production networks can to a large extent lead to the failure of these networks. The aim of this paper is to discuss the significance and explore the maintenance of the stability of these semiconductor modular production networks. Firstly, this paper qualitatively and quantitatively defines the stability of semiconductor modular production networks. Based on this, by establishing game models, this paper analyzes the influence mechanism of the main factors: external market fluctuation, the internal benefit allocation mechanism, and opportunism, which can jeopardize the stability of these networks. We find that: the greater the benefits a member enterprise derives from the common benefits, the more likely it is the member enterprise will not exit the modular production network; the adaptive ability of the networks to the external environment is closely related to the stability of the modular production networks; the supervision and punishment in networks can be substituted for each other and the level of supervision, punishment and trust can exert great influence on the stability of semiconductor modular production networks. Lastly, we propose some specific suggestions.

  4. Conference proceedings ISES 2014

    DEFF Research Database (Denmark)

    Christensen, Janne Winther; Peerstrup Ahrendt, Line; Malmkvist, Jens

    The 10th Internatinal Equitation Science Conference is held i Denmark from August 6th - 9th 2014. This book of proceedings contaions abstracts of 35 oral and 57 poster presentations within the conference themes Equine Stress, Learning and Training as well as free papers.......The 10th Internatinal Equitation Science Conference is held i Denmark from August 6th - 9th 2014. This book of proceedings contaions abstracts of 35 oral and 57 poster presentations within the conference themes Equine Stress, Learning and Training as well as free papers....

  5. Effects of spatial confinement on conduction electrons in semiconductor nanostructures

    NARCIS (Netherlands)

    Germeau, Alexander

    2003-01-01

    Semiconductor nanostructures show electrical and optical properties which can be very different from bulk semiconductors. The various effects that occur due to the spatial confinement of electrons in such structures are of scientific importance. In addition, semiconductor nanostructures are very

  6. Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

    KAUST Repository

    Almuslem, A. S.

    2017-02-14

    In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

  7. Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

    Science.gov (United States)

    Almuslem, A. S.; Hanna, A. N.; Yapici, T.; Wehbe, N.; Diallo, E. M.; Kutbee, A. T.; Bahabry, R. R.; Hussain, M. M.

    2017-02-01

    In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO2) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

  8. Absorber manufacturing made easy

    Energy Technology Data Exchange (ETDEWEB)

    Berner, Joachim

    2010-07-01

    Whether by means of a laser source or an ultrasound head - automation technology is making progress in the solar thermal sector. S and WE presents news developments in welding technology in absorber manufacture. (orig.)

  9. Many Manufactured Nanosats Project

    Data.gov (United States)

    National Aeronautics and Space Administration — To achieve the capability to affordably produce scores of nano-spacecraft for envisioned constellation missions, a new manufacturing process is needed to reduce the...

  10. The Manufacturing Industry

    National Research Council Canada - National Science Library

    Calahan, Janet; Grohoski, David C; Halevi, Herzi; Kett, Steven L; Klotsko, Jr., John A; Lett, Steven; Noyes, Julieta V; Oslund, Dawson S; Rackers, Kenneth J; Shindelar, Timothy V

    2005-01-01

    The United States (US) is the world's largest producer of manufactured goods, enabling the military and other government agencies to meet national security requirements while employing millions of Americans...

  11. Manufacturing parabolic mirrors

    CERN Multimedia

    CERN PhotoLab

    1975-01-01

    The photo shows the construction of a vertical centrifuge mounted on an air cushion, with a precision of 1/10000 during rotation, used for the manufacture of very high=precision parabolic mirrors. (See Annual Report 1974.)

  12. MEDICAL MANUFACTURING INNOVATIONS

    Directory of Open Access Journals (Sweden)

    Cosma Sorin Cosmin

    2015-02-01

    Full Text Available The purpose of these studies was to improve the design and manufacturing process by selective laser melting, of new medical implants. After manufacturing process, the implants were measured, microscopically and mechanical analyzed. Implants manufactured by AM can be an attractive option for surface coatings to improve the osseointegration process. The main advantages of customized implants made by AM process are: the precise adaptation to the region of implantation, better cosmesis, reduced surgical times and better performance over their generic counterparts. These medical manufacturing changes the way that the surgeons are planning surgeries and engineers are designing custom implant. AM process has eliminated the constraints of shape, size, internal structure and mechanical properties making it possible for fabrication of implants that conform to the physical and mechanical requirements of implantation according to CT images. This article will review some custom implants fabricated in DME using biocompatible titanium.

  13. The ATLAS semiconductor tracker (SCT)

    International Nuclear Information System (INIS)

    Jackson, J.N.

    2005-01-01

    The ATLAS detector (CERN,LHCC,94-43 (1994)) is designed to study a wide range of physics at the CERN Large Hadron Collider (LHC) at luminosities up to 10 34 cm -2 s -1 with a bunch-crossing rate of 40 MHz. The Semiconductor Tracker (SCT) forms a key component of the Inner Detector (vol. 1, ATLAS TDR 4, CERN,LHCC 97-16 (1997); vol. 2, ATLAS TDR 5, CERN,LHCC 97-17 (1997)) which is situated inside a 2 T solenoid field. The ATLAS Semiconductor Tracker (SCT) utilises 4088 silicon modules with binary readout mounted on carbon fibre composite structures arranged in the forms of barrels in the central region and discs in the forward region. The construction of the SCT is now well advanced. The design of the SCT modules, services and support structures will be briefly outlined. A description of the various stages in the construction process will be presented with examples of the performance achieved and the main difficulties encountered. Finally, the current status of the construction is reviewed

  14. Method for fabricating semiconductor devices

    Science.gov (United States)

    Kaiser, William J. (Inventor); Grunthaner, Frank J. (Inventor); Hecht, Michael H. (Inventor); Bell, Lloyd D. (Inventor)

    1995-01-01

    A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.

  15. The ATLAS semiconductor tracker (SCT)

    CERN Document Server

    Jackson, J N

    2005-01-01

    The ATLAS detector (CERN/LHCC/94-43 (1994)) is designed to study a wide range of physics at the CERN Large Hadron Collider (LHC) at luminosities up to 10**3**4 cm**-**2 s**-**1 with a bunch-crossing rate of 40 MHz. The Semiconductor Tracker (SCT) forms a key component of the Inner Detector (vol. 1, ATLAS TDR 4, CERN/LHCC 97-16 (1997); vol. 2, ATLAS TDR 5, CERN/LHCC 97-17 (1997)) which is situated inside a 2 T solenoid field. The ATLAS Semiconductor Tracker (SCT) utilises 4088 silicon modules with binary readout mounted on carbon fibre composite structures arranged in the forms of barrels in the central region and discs in the forward region. The construction of the SCT is now well advanced. The design of the SCT modules, services and support structures will be briefly outlined. A description of the various stages in the construction process will be presented with examples of the performance achieved and the main difficulties encountered. Finally, the current status of the construction is reviewed.

  16. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  17. Dopants and defects in semiconductors

    CERN Document Server

    McCluskey, Matthew D

    2012-01-01

    "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … The book will be most useful for beginning graduate students in materials science. … an easy reading, broad introductory overview of the field …"-Materials Today, July-August 2012"… well written, with clear, lucid explanations …"-Chemistry World"The scientific development towards the method of controllable doping transformed the erratic and not reproducible family of semiconductor materials into the truly wonderful basis of modern microelectronics. This book tells the remarkable success story and I recommend it!"-Hans J. Queisser, Max-Planck-Institute, Stuttgart, Germany"McCluskey and Haller have written an outstanding modern guide to this field that will be useful to newcomers, and also to active researchers who want to broaden their horizons, as a means to learn the capabilities and limitations of the many techniques that are used in semiconductor-defect science."-Professor Michael J....

  18. Holonic Manufacturing Paint Shop

    Science.gov (United States)

    Lind, Morten; Roulet-Dubonnet, Olivier; Nyen, Per Åge; Gellein, Lars Tore; Lien, Terje; Skavhaug, Amund

    In pursuit of flexibility and agility within discrete manufacturing, the surrounding logistics and handling processes of a paint shop is under construction as a laboratory prototype application. Holonic Manufacturing seems to be a promising strategic paradigm and architecture to use for a system characterised by production logistics and control. This paper describes the physical devices to be used; the desired functionality; and the basic logic control designed. Additionally, the ideas for holonification based on the already designed logic control is presented.

  19. Additive manufactured serialization

    Science.gov (United States)

    Bobbitt, III, John T.

    2017-04-18

    Methods for forming an identifying mark in a structure are described. The method is used in conjunction with an additive manufacturing method and includes the alteration of a process parameter during the manufacturing process. The method can form in a unique identifying mark within or on the surface of a structure that is virtually impossible to be replicated. Methods can provide a high level of confidence that the identifying mark will remain unaltered on the formed structure.

  20. 2013 International Conference on Mechatronics and Automatic Control Systems

    CERN Document Server

    2014-01-01

    This book examines mechatronics and automatic control systems. The book covers important emerging topics in signal processing, control theory, sensors, mechanic manufacturing systems and automation. The book presents papers from the 2013 International Conference on Mechatronics and Automatic Control Systems held in Hangzhou, China on August 10-11, 2013. .

  1. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Birner, Stefan

    2011-11-15

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model

  2. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    International Nuclear Information System (INIS)

    Birner, Stefan

    2011-01-01

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano 3 software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano 3 software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model to recently

  3. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  4. Second international conference on isotopes. Conference proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Hardy, C.J. [ed.

    1997-10-01

    The Second International Conference on Isotopes (2ICI) was hosted by the Australian Nuclear Association in Sydney, NSW, Australia. The Theme of the Second Conference: Isotopes for Industry, Health and a Better Environment recognizes that isotopes have been used in these fields successfully for many years and offer prospects for increasing use in the future. The worldwide interest in the use of research reactors and accelerators and in applications of stable and radioactive isotopes, isotopic techniques and radiation in industry, agriculture, medicine, environmental studies and research in general, was considered. Other radiation issues including radiation protection and safety were also addressed. International and national overviews and subject reviews invited from leading experts were included to introduce the program of technical sessions. The invited papers were supported by contributions accepted from participants for oral and poster presentation. A Technical Exhibition was held in association with the Conference. This volume contains the full text or extended abstracts of papers number 61- to number 114

  5. Semiconductor composition containing iron, dysprosium, and terbium

    Science.gov (United States)

    Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.; Malasi, Abhinav; Taz, Humaira; Farah, Annettee E.; Kalyanaraman, Ramakrishnan; Duscher, Gerd Josef Mansfred; Patel, Maulik K.

    2017-09-26

    An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

  6. Semiconductor applications of plasma immersion ion implantation ...

    Indian Academy of Sciences (India)

    Unknown

    implantation technology. MUKESH KUMAR*, RAJKUMAR†, DINESH KUMAR and P J GEORGE. Department of Electronic Science, Kurukshetra University, Kurukshetra 136 119, India. †Semiconductor Complex Ltd., Industrial Area Phase 8, Mohali 160 059, India. Abstract. Many semiconductor integrated circuit ...

  7. Dispersion-induced nonlinearities in semiconductors

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, A.

    2002-01-01

    A dispersive and saturable medium is shown, under very general conditions, to possess ultrafast dynamic behaviour due to non-adiabatic polarisation dynamics. Simple analytical expressions relating the effect to the refractive index dispersion of a semiconductor ire derived and the magnitude...... of the equivalent Kerr coefficient is shown to be in qualitative agreement with measurements on active semiconductor waveguides....

  8. Two-fluid hydrodynamic model for semiconductors

    DEFF Research Database (Denmark)

    Maack, Johan Rosenkrantz; Mortensen, N. Asger; Wubs, Martijn

    2018-01-01

    The hydrodynamic Drude model (HDM) has been successful in describing the optical properties of metallic nanostructures, but for semiconductors where several different kinds of charge carriers are present an extended theory is required. We present a two-fluid hydrodynamic model for semiconductors...

  9. Coherent effects in semiconductor light emission

    Science.gov (United States)

    Kira, M.; Jahnke, Frank; Hoyer, W.; Koch, Stephan W.

    2000-03-01

    Coherent signatures in the semiconductor light emission are studied using a fully quantum mechanical theory for the system of photons and Coulomb interacting electron-hole pairs. The dominant light-matter correlations couple the semiconductor Bloch and luminescence equations yielding significant quantum corrections. A coherent excitation leads to squeezing of the emitted light as well as to entanglement between light and matter.

  10. Semiconductor applications of plasma immersion ion implantation ...

    Indian Academy of Sciences (India)

    Unknown

    549. Semiconductor applications of plasma immersion ion implantation technology. MUKESH KUMAR*, RAJKUMAR†, DINESH KUMAR and P J GEORGE. Department of Electronic Science, Kurukshetra University, Kurukshetra 136 119, India. †Semiconductor Complex Ltd., Industrial Area Phase 8, Mohali 160 059, India.

  11. Packaging of high power semiconductor lasers

    CERN Document Server

    Liu, Xingsheng; Xiong, Lingling; Liu, Hui

    2014-01-01

    This book introduces high power semiconductor laser packaging design. The characteristics and challenges of the design and various packaging, processing, and testing techniques are detailed by the authors. New technologies, in particular thermal technologies, current applications, and trends in high power semiconductor laser packaging are described at length and assessed.

  12. Metal–semiconductor nanojunctions and their rectification ...

    Indian Academy of Sciences (India)

    Administrator

    tent with the theoretical prediction of Fermi level shifting of the semiconductor within the bandgap as a function of pressure. Keywords. Metal–semiconductor nanojunctions; rectification characteristics; nanostructure systems; single- walled carbon nanotubes. 1. Introduction. In recent years there have been a lot of research ...

  13. Hybrid anode for semiconductor radiation detectors

    Science.gov (United States)

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  14. Measurement of spectral linewidths of semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Du Xiaocheng; He Zhengchuan; Tang Sulan

    1987-03-01

    Based on the van der Pol equation, formulas describing the measurement of spectral linewidths of semiconductor lasers with the delayed self-heterodyne method were deduced and the influence of the spectral parameters on the measurement are given. Experimental results of single frequency semiconductor lasers are reported.

  15. Semiconductor applications of plasma immersion ion implantation ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 25; Issue 6. Semiconductor applications of plasma immersion ion implantation technology ... Department of Electronic Science, Kurukshetra University, Kurukshetra 136 119, India; Semiconductor Complex Ltd., Industrial Area Phase 8, Mohali 160 059, India ...

  16. neutron-Induced Failures in semiconductor Devices

    Energy Technology Data Exchange (ETDEWEB)

    Wender, Stephen Arthur [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-13

    Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

  17. Fiscal 2000 achievement report. Research and development of semiconductor CVD chamber cleaning systems for electronic device manufacturing using new alternative gas instead of SF6, PFCs, and other gases; 2000 nendo sokkoteki kakushinteki energy kankyo gijutsu kaihatsu seika hokokusho. SF6 tou ni daitaisuru gasu wo riyo shita denshi debaisu seizo cleaning system no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The efforts aim to develop a CVD (chemical vapor deposition) mechanism cleaning gas with less environmental impact such as global warming and a CVD process using the same. The candidate gas synthesizing study for the development of such a gas continues from the preceding fiscal year. In addition, various candidate gases and tentatively synthesized gases are evaluated for their cleaning performance using a simplified experimental system. As the result, patent applications were filed for three novel alternative gases low in environmental impact and high in cleaning performance. In the research and development of CVD processes, a verification test process is developed for the evaluation of alternative gases at the real system level using a large CVD evaluation system. Studies are also made in which some existing gases are utilized to improve on CVD cleaning efficiency and to reduce greenhouse gas emissions. In relation to the process, one domestic patent application is made, and three essays are presented at an international conference on electrochemistry in the United States. (NEDO)

  18. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  19. Molecular semiconductors photoelectrical properties and solar cells

    CERN Document Server

    Rees, Ch

    1985-01-01

    During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator « 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds,...

  20. Energetics Manufacturing Technology Center (EMTC)

    Data.gov (United States)

    Federal Laboratory Consortium — The Energetics Manufacturing Technology Center (EMTC), established in 1994 by the Office of Naval Research (ONR) Manufacturing Technology (ManTech) Program, is Navy...

  1. Multiphoton processes: conference proceedings

    International Nuclear Information System (INIS)

    Lambropoulos, P.; Smith, S.J.

    1984-01-01

    The chapters of this volume represent the invited papers delivered at the conference. They are arranged according to thermatic proximity beginning with atoms and continuing with molecules and surfaces. Section headings include multiphoton processes in atoms, field fluctuations and collisions in multiphoton process, and multiphoton processes in molecules and surfaces. Abstracts of individual items from the conference were prepared separately for the data base

  2. Program of the Conference

    International Nuclear Information System (INIS)

    2006-01-01

    The International Conference SES 2006 (Secure Energy Supply, Bezpecna dodavka energie) was realised in Bratislava, during September 26 - 29, 2006 in the hotel Crowne Plaza and deals with most important problems of world and Slovak energetics. Objective of this Conference was discussion of experience and information concerning strategic aspects of energy supply safety and the development of the Slovak and European Energy Industry

  3. Canadian dam safety conference

    International Nuclear Information System (INIS)

    1991-01-01

    A conference was held on the subject of dam safety in Canada. Sessions concerned assessment of existing dam safety under seismic loading, seismic analysis of concrete and embankment dams, selection of seismic criteria, landslides, risk analysis, and floods. Separate abstracts have been prepared for 24 papers presented at the conference

  4. Radiation'96. Conference handbook

    International Nuclear Information System (INIS)

    1996-01-01

    The conference program includes eight invited lectures which cover a range of contemporary topics in radiation science and technology. In addition, thirty-two oral papers were presented, along with forty-five posters. The conference handbook contains one-page precis or extended abstracts of all presentations, and is a substantial compendium of current radiation research in Australia

  5. Radiation`96. Conference handbook

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-12-31

    The conference program includes eight invited lectures which cover a range of contemporary topics in radiation science and technology. In addition, thirty-two oral papers were presented, along with forty-five posters. The conference handbook contains one-page precis or extended abstracts of all presentations, and is a substantial compendium of current radiation research in Australia.

  6. Hamburg Accelerator Conference (2)

    International Nuclear Information System (INIS)

    Wilson, Edmund J.N.

    1992-01-01

    From 20-24 July, Hamburg welcomed the Fifteenth International Conference on High Energy Accelerators (HEACC). The HEACC Conference traditionally reviews the status of all major accelerator projects whether they are already running like clockwork, still in the construction phase, or waiting impatiently for financial approval

  7. The Vision Conference

    DEFF Research Database (Denmark)

    Vidal, Rene Victor Valqui

    2002-01-01

    The concept of the design, planning and mangement of a creative conference is presented. A case study illustrates the theoretical concepts.......The concept of the design, planning and mangement of a creative conference is presented. A case study illustrates the theoretical concepts....

  8. ICCK Conference Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Green, William H. [MIT

    2013-05-28

    The 7th International Conference on Chemical Kinetics (ICCK) was held July 10-14, 2011, at Massachusetts Institute of Technology (MIT), in Cambridge, MA, hosted by Prof. William H. Green of MIT's Chemical Engineering department. This cross-disciplinary meeting highlighted the importance of fundamental understanding of elementary reactions to the full range of chemical investigations. The specific conference focus was on elementary-step kinetics in both the gas phase and in condensed phase. The meeting provided a unique opportunity to discuss how the same reactive species and reaction motifs manifest under very different reaction conditions (e.g. atmospheric, aqueous, combustion, plasma, in nonaqueous solvents, on surfaces.). The conference featured special sessions on new/improved experimental techniques, improved models and data analysis for interpreting complicated kinetics, computational kinetics (especially rate estimates for large kinetic models), and a panel discussion on how the community should document/archive kinetic data. In the past, this conference had been limited to homogeneous gas-phase and liquid-phase systems. This conference included studies of heterogeneous kinetics which provide rate constants for, or insight into, elementary reaction steps. This Grant from DOE BES covered about half of the subsidies we provided to students and postdocs who attended the conference, by charging them reduced-rate registration fees. The complete list of subsidies provided are listed in Table 1 below. This DOE funding was essential to making the conference affordable to graduate students, and indeed the attendance at this conference was higher than at previous conferences in this series. Donations made by companies provided additional subsidies, leveraging the DOE funding. The conference was very effective in educating graduate students and important in fostering scientific interactions, particularly between scientists studying gas phase and liquid phase

  9. Rapid thermal processing of semiconductors

    CERN Document Server

    Borisenko, Victor E

    1997-01-01

    Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions They thoroughly cover the work of international investigators in the field

  10. Threats, protests greet conference.

    Science.gov (United States)

    Struck, D

    1994-09-04

    In preparation for the 1994 International Conference on Population and Development, Egypt has deployed 14,000 police to protect participants from threatened violence. The Vatican has joined forces with Muslim fundamentalists to condemn the conference as a vehicle for imposing Western ideals, particularly abortion, on Third world countries. In addition, the opposition is raising the specter of a descent of homosexuals onto Cairo and Muslim fundamentalists have threatened to murder Western representatives. A suit filed by Islamic lawyers, aimed at stopping the conference, failed. Sudan and Saudi Arabia plan to boycott the conference, and it remains uncertain whether Libya will be represented. Conference organizers have not been deterred by the threats and note that the controversy has drawn public attention to the central issues under debate.

  11. 3rd Cryocooler Conference

    CERN Document Server

    Louie, Berverly; McCarthy, Sandy

    1985-01-01

    Cryocoolers 3 documents the output of the Third Cryocooler Conference, held at the National Bureau of Standards, Boulder, Colorado, on September 17-18, 1984. About 140 people from 10 countries attended the conference representing industry, government, and academia. A total of 26 papers were presented orally at the conference and all appear in written form in the proceedings. The focus of this conference was on small cryocoolers in the temperature range of 4 - 80 K. Mechanical and nonmechanical types are discussed in the various papers. Applications of these small cryocoolers include the cooling of infrared detectors, cryopumps, small superconducting devices and magnets, and electronic devices. The conference proceedings reproduced here was published by the National Bureau of Standards in Boulder, Colorado as NBS Special Publication #698.

  12. Radiation effects in semiconductors: technologies for hardened integrated circuits

    International Nuclear Information System (INIS)

    Charlot, J.M.

    1983-09-01

    Various technologies are used to manufacture integrated circuits for electronic systems. But for specific applications, including those with radiation environment, it is necessary to choose an appropriate technologie or to improve a specific one in order to reach a definite hardening level. The aim of this paper is to present the main effects induced by radiation (neutrons and gamma rays) into the basic semiconductor devices, to explain some physical degradation mechanisms and to propose solutions for hardened integrated circuit fabrication. The analysis involves essentially the monolithic structure of the integrated circuits and the isolation technology of active elements. In conclusion, the advantages of EPIC and SOS technologies are described and the potentialities of new technologies (GaAs and SOI) are presented

  13. Radiation effects in semiconductors: technologies for hardened integrated circuits

    International Nuclear Information System (INIS)

    Charlot, J.M.

    1984-01-01

    Various technologies are used to manufacture integrated circuits for electronic systems. But for specific applications, including those with radiation environment, it is necessary to choose an appropriate technology or to improve a specific one in order to reach a definite hardening level. The aim of this paper is to present the main effects induced by radiation (neutrons and gamma rays) into the basic semiconductor devices, to explain some physical degradation mechanisms and to propose solutions for hardened integrated circuit fabrication. The analysis involves essentially the monolithic structure of the integrated circuits and the isolation technology of active elements. In conclusion, the advantages of EPIC and SOS technologies are described and the potentialities of new technologies (GaAs and SOI) are presented. (author)

  14. Thermal sensors principles and applications for semiconductor industries

    CERN Document Server

    2015-01-01

    This book is a comprehensive guide to both the fundamentals of thermal sensors and their advanced functions. Key topics include sensor materials, CMOS-compatible sensors, measurement capabilities, thermal management and manufacturing processes. The introductory chapter covers the basic principles of thermal sensors from the essentials of heat transfer to smart wireless sensors. Later chapters illustrate the wide range of thermal sensor uses, from microprocessor thermal sensing to energy converter applications. Modeling and simulation techniques are used to explain the future direction of the field. Designed for researchers and practitioners working with wireless sensors and thermal management, Thermal Sensors: Principles and Applications for Semiconductor Industries is a valuable reference to the benefits and challenges these sensors offer. Advanced-level students studying mechanical or electrical engineering and networks will also find the content useful.

  15. Overview of atomic layer etching in the semiconductor industry

    International Nuclear Information System (INIS)

    Kanarik, Keren J.; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A.

    2015-01-01

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices

  16. Nanostructured Semiconductor Materials for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Carmen Cavallo

    2017-01-01

    Full Text Available Since O’Regan and Grätzel’s first report in 1991, dye-sensitized solar cells (DSSCs appeared immediately as a promising low-cost photovoltaic technology. In fact, though being far less efficient than conventional silicon-based photovoltaics (being the maximum, lab scale prototype reported efficiency around 13%, the simple design of the device and the absence of the strict and expensive manufacturing processes needed for conventional photovoltaics make them attractive in small-power applications especially in low-light conditions, where they outperform their silicon counterparts. Nanomaterials are at the very heart of DSSC, as the success of its design is due to the use of nanostructures at both the anode and the cathode. In this review, we present the state of the art for both n-type and p-type semiconductors used in the photoelectrodes of DSSCs, showing the evolution of the materials during the 25 years of history of this kind of devices. In the case of p-type semiconductors, also some other energy conversion applications are touched upon.

  17. Second international conference on isotopes. Conference proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Hardy, C.J. [ed.

    1997-10-01

    The Second International Conference on Isotopes (2ICI) was hosted by the Australian Nuclear Association in Sydney, NSW, Australia. The Theme of the Second Conference: Isotopes for Industry, Health and a Better Environment recognizes that isotopes have been used in these fields successfully for many years and offer prospects for increasing use in the future. The worldwide interest in the use of research reactors and accelerators and in applications of stable and radioactive isotopes, isotopic techniques and radiation in industry, agriculture, medicine, environmental studies and research in general, was considered. Other radiation issues including radiation protection and safety were also addressed. International and national overviews and subject reviews invited from leading experts were included to introduce the program of technical sessions. The invited papers were supported by contributions accepted from participants for oral and poster presentation. A Technical Exhibition was held in association with the Conference. This volume contains the foreword, technical program, the author index and of the papers (1-60) presented at the conference.

  18. Second international conference on isotopes. Conference proceedings

    International Nuclear Information System (INIS)

    Hardy, C.J.

    1997-10-01

    The Second International Conference on Isotopes (2ICI) was hosted by the Australian Nuclear Association in Sydney, NSW, Australia. The Theme of the Second Conference: Isotopes for Industry, Health and a Better Environment recognizes that isotopes have been used in these fields successfully for many years and offer prospects for increasing use in the future. The worldwide interest in the use of research reactors and accelerators and in applications of stable and radioactive isotopes, isotopic techniques and radiation in industry, agriculture, medicine, environmental studies and research in general, was considered. Other radiation issues including radiation protection and safety were also addressed. International and national overviews and subject reviews invited from leading experts were included to introduce the program of technical sessions. The invited papers were supported by contributions accepted from participants for oral and poster presentation. A Technical Exhibition was held in association with the Conference. This volume contains the foreword, technical program, the author index and of the papers (1-60) presented at the conference

  19. PREFACE: 3rd Workshop on Theory, Modelling and Computational Methods for Semiconductors (TMCSIII)

    Science.gov (United States)

    Califano, Marco; Migliorato, Max; Probert, Matt

    2012-05-01

    These conference proceedings contain the written papers of the contributions presented at the 3rd International Conference on Theory, Modelling and Computational Methods for Semiconductor materials and nanostructures. The conference was held at the School of Electronic and Electrical Engineering, University of Leeds, Leeds, UK on 18-20 January 2012. The previous conferences in this series took place in 2010 at St William's College, York and in 2008 at the University of Manchester, UK. The development of high-speed computer architectures is finally allowing the routine use of accurate methods for calculating the structural, thermodynamic, vibrational, optical and electronic properties of semiconductors and their hetero- and nano-structures. The scope of this conference embraces modelling, theory and the use of sophisticated computational tools in semiconductor science and technology, where there is substantial potential for time-saving in R&D. Theoretical approaches represented in this meeting included: Density Functional Theory, Tight Binding, Semiempirical Pseudopotential Methods, Effective Mass Models, Empirical Potential Methods and Multiscale Approaches. Topics included, but were not limited to: Optical and Transport Properties of Quantum Nanostructures including Colloids and Nanotubes, Plasmonics, Magnetic Semiconductors, Graphene, Lasers, Photonic Structures, Photovoltaic and Electronic Devices. This workshop ran for three days, with the objective of bringing together UK and international leading experts in the theoretical modelling of Group IV, III-V and II-VI semiconductors, as well as students, postdocs and early-career researchers. The first day focused on providing an introduction and overview of this vast field, aimed particularly at students, with several lectures given by recognised experts in various theoretical approaches. The following two days showcased some of the best theoretical research carried out in the UK in this field, with several

  20. PREFACE: 4th Workshop on Theory, Modelling and Computational Methods for Semiconductors (TMCSIV)

    Science.gov (United States)

    Tomić, Stanko; Probert, Matt; Migliorato, Max; Pal, Joydeep

    2014-06-01

    These conference proceedings contain the written papers of the contributions presented at the 4th International Conference on Theory, Modelling and Computational Methods for Semiconductor materials and nanostructures. The conference was held at the MediaCityUK, University of Salford, Manchester, UK on 22-24 January 2014. The previous conferences in this series took place in 2012 at the University of Leeds, in 2010 at St William's College, York and in 2008 at the University of Manchester, UK. The development of high-performance computer architectures is finally allowing the routine use of accurate methods for calculating the structural, thermodynamic, vibrational, optical and electronic properties of semiconductors and their hetero- and nano-structures. The scope of this conference embraces modelling, theory and the use of sophisticated computational tools in semiconductor science and technology, where there is substantial potential for time-saving in R&D. Theoretical approaches represented in this meeting included: Density Functional Theory, Semi-empirical Electronic Structure Methods, Multi-scale Approaches, Modelling of PV devices, Electron Transport, and Graphene. Topics included, but were not limited to: Optical Properties of Quantum Nanostructures including Colloids and Nanotubes, Plasmonics, Magnetic Semiconductors, Photonic Structures, and Electronic Devices. This workshop ran for three days, with the objective of bringing together UK and international leading experts in the theoretical modelling of Group IV, III-V and II-VI semiconductors, as well as students, postdocs and early-career researchers. The first day focused on providing an introduction and overview of this vast field, aimed particularly at students, with several lectures given by recognized experts in various theoretical approaches. The following two days showcased some of the best theoretical research carried out in the UK in this field, with several contributions also from representatives of

  1. NASA's National Center for Advanced Manufacturing

    Science.gov (United States)

    Vickers, John

    2003-01-01

    , Tennessee Technological University, Texas A&M University, and Virginia Polytechnic Institute and State University provided wide-ranging engineering research, new degree/curriculum programs, and a web-based lecture series. NCAM has fostered an important presence and leadership role within the national manufacturing community. Its progressive influence can be seen in government, industry and academia, and in national associations, professional organizations, conferences, workshops, and forums.

  2. Photodiodes based on fullerene semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Voz, C. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain)], E-mail: cvoz@eel.upc.edu; Puigdollers, J. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain); Cheylan, S. [ICFO- Institut de Ciencies Fotoniques, Mediterranean Technology Park, Av. del Canal Olimpic s/n, 08860-Castelldefels (Spain); Fonrodona, M.; Stella, M.; Andreu, J. [Solar Energy Group, Departament Fisica Aplicada i Optica, Universitat de Barcelona, Avda. Diagonal 647, 08028-Barcelona (Spain); Alcubilla, R. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain)

    2007-07-16

    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum.

  3. Semirelativity in semiconductors: a review.

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-20

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures [Formula: see text] are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band [Formula: see text] description for NGS. The maximum electron velocity in NGS is [Formula: see text], which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In [Formula: see text] alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength [Formula: see text] is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that [Formula: see text] is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing energy. This conclusion is confirmed experimentally for NGS. Electrons

  4. Volatile organometallic and semiconductor materials

    International Nuclear Information System (INIS)

    Dickson, R.S.

    1991-01-01

    This article reports on a project concerned with the metal organic chemical vapour deposition (MOCVD) of mercury-cadmium telluride (MCT) undertaken by a research consortium based in the Clayton area involving Monash University Chemistry Department, Telecom Research Laboratories, and CSIRO Division of Material Sciences and Technology. An M.R. Semicon 226 MOCVD reactor, operating near atmospheric presure with hydrogen carrier gas has been used. Most applications of MCT are direct consequence of its responsiveness to radiation in infrared region spectrum. The main aims of the project were to prepare and assess a range of volatile organometallics that might find use as a dopant sources for MCT, to prepare and study the properties of a range of different lanthanide complexes for MOCVD applications and to fully characterize the semiconductor wafers after growth. 19 refs., 3 figs

  5. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  6. Semiconductor nanowires: optics and optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, R. [University of Pennsylvania, Department of Materials Science and Engineering, Philadelphia, PA (United States); Lieber, C.M. [Harvard University, Department of Chemistry and Chemical Biology, and Division of Engineering Applied Sciences, Cambridge, MA (United States)

    2006-11-15

    Single crystalline semiconductor nanowires are being extensively investigated due to their unique electronic and optical properties and their potential use in novel electronic and photonic devices. The unique properties of nanowires arise owing to their anisotropic geometry, large surface to volume ratio, and carrier and photon confinement in two dimensions (1D system). Currently, tremendous efforts are being devoted to rational synthesis of nanowire structures with control over their composition, structure, dopant concentration, characterization, fundamental properties, and assembly into functional devices. In this article we will review the progress made in the area of nanowire optics and optoelectronic devices, including diodes, lasers, detectors, and waveguides, and will outline the general challenges that must be overcome and some potential solutions in order to continue the exponential progress in this exciting area of research. (orig.)

  7. Semirelativity in semiconductors: a review

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-01

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures \\varepsilon ≤ft(\\mathbf{k}\\right) are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band \\mathbf{k}\\centerdot \\mathbf{p} description for NGS. The maximum electron velocity in NGS is u≃ 1× {{10}8}~\\text{cm}~{{\\text{s}}-1} , which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In \\text{H}{{\\text{g}}1-x}\\text{C}{{\\text{d}}x}\\text{Te} alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength {λz} is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that {λz} is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing

  8. High throughput semiconductor deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Ptak, Aaron Joseph; Kuech, Thomas F.; Schulte, Kevin; Simon, John D.

    2017-11-21

    A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

  9. Self-compensation in semiconductors

    Science.gov (United States)

    Tsur, Y.; Riess, I.

    1999-09-01

    The problem of self-compensation of charged dopants is analyzed. Special emphasis is given to dopants in binary oxides. It is shown that one can determine the degree of self-compensation from the properties of the host material and dopant concentration alone. It is further shown that for a native p-type semiconductor, donors are compensated, mostly, by native ionic defects. On the other hand, doping with acceptors allows us to increase significantly the hole concentration, i.e., self-compensation is low under high doping levels. For a native n-type semiconductor the opposite is true, namely, extrinsic acceptors are mainly compensated by native ionic defects. It is shown that the changes in concentration of all the charged defects are simply related by a single factor, the doping factor f, or its power fk where k depends solely on the defect's charge. Quantitative calculations of f and defect concentrations are presented for Cu2O, which was used as a model material. It is found that for p-type Cu2O doping with donors results in f within the range of 1-10, depending on the dopant concentration and P(O2). This means that the hole concentration decreases and the electron concentration increases at most by a factor of 10. Therefore one does not expect to obtain a changeover from p- to n-type cuprous oxide by doping, under equilibrium conditions. Most of the donors are compensated by negative ionic defects. Self-compensation in the presence of amphoteric defects and Fermi level stabilization are discussed, using the former formalism.

  10. Thermionic cooling in semiconductor multilayers

    International Nuclear Information System (INIS)

    Lee, S.; Lewis, R.A.; Lough, B.; Zhang, C.

    2000-01-01

    Full text: A solid-state refrigerator in which electrons transport heat has advantages over the conventional vapour-cycle, compressor-based domestic refrigerator since it has no moving parts, it is low-maintenance, silent, vibration-free and does not require the use of refrigerant gases. The usual approach to making an all-electrical refrigerator is by thermoelectric refrigeration. After a period of intense research in the 1950s and 60s it was realised that the efficiency of thermoelectric devices was less than, and unlikely to exceed, that of conventional compressor units. While thermoelectric cooling has found specialised applications in cases where reliability, compactness and weight are important considerations, it does not appear that thermo-electrics will ever successfully compete in the domestic market, in spite of recent advances in the design and fabrication of thermoelectric materials. A new approach to an all-electric refrigerator is to employ thermionic emission over potential barriers. A key difference between a thermoelectric device and a thermionic device is that in the former the electrons are scattered in their motion and in the latter they are not. Thus thermionic cooling, in principle, can be much more efficient than thermoelectric cooling. A radical new realisation of the thermionic refrigerator was suggested recently in which a multilayer semiconductor structure would be used. We discuss the optimisation of such a multilayer semiconductor cooling system by considering (1) electron-phonon interactions in the barriers and electrodes; (2) the detailed treatment of thermal conductivity; (3) an exact numerical solution of the heat and energy currents (in contrast to the previous approximate analytic solutions); (4) the effect of varying layer thickness across the device; and (5) the effect of varying current density across the device

  11. 4th International Conference in Network Analysis

    CERN Document Server

    Koldanov, Petr; Pardalos, Panos

    2016-01-01

    The contributions in this volume cover a broad range of topics including maximum cliques, graph coloring, data mining, brain networks, Steiner forest, logistic and supply chain networks. Network algorithms and their applications to market graphs, manufacturing problems, internet networks and social networks are highlighted. The "Fourth International Conference in Network Analysis," held at the Higher School of Economics, Nizhny Novgorod in May 2014, initiated joint research between scientists, engineers and researchers from academia, industry and government; the major results of conference participants have been reviewed and collected in this Work. Researchers and students in mathematics, economics, statistics, computer science and engineering will find this collection a valuable resource filled with the latest research in network analysis.

  12. Solid-state NMR of inorganic semiconductors.

    Science.gov (United States)

    Yesinowski, James P

    2012-01-01

    Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

  13. International conference on Advances in Engineering Technologies and Physical Science

    CERN Document Server

    Ao, Sio-Iong; Rieger, Burghard; IAENG Transactions on Engineering Technologies : Special Edition of the World Congress on Engineering and Computer Science 2011

    2013-01-01

    This volume contains thirty revised and extended research articles written by prominent researchers participating in an international conference in engineering technologies and physical science and applications. The conference serves as good platforms for the engineering community to meet with each other and to exchange ideas. The conference has also struck a balance between theoretical and application development. The conference is truly international meeting with a high level of participation from many countries. Topics covered include chemical engineering, circuits, communications systems, control theory, engineering mathematics, systems engineering, manufacture engineering, and industrial applications. The book offers the state of art of tremendous advances in engineering technologies and physical science and applications, and also serves as an excellent reference work for researchers and graduate students working with/on engineering technologies and physical science and applications.

  14. Laser in manufacturing

    CERN Document Server

    Davim, J Paulo

    2013-01-01

    Generally a laser (light amplification by stimulated emission of radiation) is defined as "a device which uses a quantum mechanical effect, stimulated emission, to generate a coherent beam of light from a lasing medium of controlled purity, size, and shape". Laser material processing represents a great number of methods, which are rapidly growing in current and different industrial applications as new alternatives to traditional manufacturing processes. Nowadays, the use of lasers in manufacturing is an emerging area with a wide variety of applications, for example, in electronics, molds an

  15. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  16. Laser Cooling of 2-6 Semiconductors

    Science.gov (United States)

    2016-08-12

    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

  17. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  18. Nanoscale characterisation of semiconductors by cathodoluminescence

    Science.gov (United States)

    Thonke, K.; Tischer, I.; Hocker, M.; Schirra, M.; Fujan, K.; Wiedenmann, M.; Schneider, R.; Frey, M.; Feneberg, M.

    2014-03-01

    Cathodoluminescence measurements carried out either in a scanning secondary or a transmission electron microscope allow a direct correlation of structural features with the emission spectra. Applied to semiconductors, numerous material and electronic properties can be determined on a length scale down to 10 nm in favourable cases. In this tutorial, we discuss the nature of the most important light emission processes in semiconductors, and what kind of information can principally be derived. Several examples for the application of this method in studies on bulk and nanocrystalline semiconductor materials are discussed.

  19. Foreword: Focus on Superconductivity in Semiconductors

    Directory of Open Access Journals (Sweden)

    Yoshihiko Takano

    2008-01-01

    Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

  20. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.