Cathode R and D for future light sources

Energy Technology Data Exchange (ETDEWEB)

Dowell, D.H., E-mail: dowell@slac.stanford.ed [SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States); Bazarov, I.; Dunham, B. [Cornell University, Cornell Laboratory for Accelerator-Based Sciences and Education (CLASSE) Wilson Laboratory, Cornell University, Ithaca, NY 14853 (United States); Harkay, K. [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Il 60439 (United States); Hernandez-Garcia, C. [Thomas Jefferson Laboratory, 12000 Jefferson Ave, Free Electron Laser Suite 19 Newport News, VA 23606 (United States); Legg, R. [University of Wisconsin, SRC, 3731 Schneider Dr., Stoughton, WI 53589 (United States); Padmore, H. [Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); Rao, T.; Smedley, J. [Brookhaven National Laboratory, 20 Technology Street, Bldg. 535B, Brookhaven National Laboratory Upton, NY 11973 (United States); Wan, W. [Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States)

2010-10-21

This paper reviews the requirements and current status of cathodes for accelerator applications, and proposes a research and development plan for advancing cathode technology. Accelerator cathodes need to have long operational lifetimes and produce electron beams with a very low emittance. The two principal emission processes to be considered are thermionic and photoemission with the photocathodes being further subdivided into metal and semi-conductors. Field emission cathodes are not included in this analysis. The thermal emittance is derived and the formulas used to compare the various cathode materials. To date, there is no cathode which provides all the requirements needed for the proposed future light sources. Therefore a three part research plan is described to develop cathodes for these future light source applications.

Controlling the speed of light in semiconductor waveguides: Physics and applications

DEFF Research Database (Denmark)

Mørk, Jesper; Xue, Weiqi; Chen, Yaohui

2009-01-01

We review the physics of slow and fast light effects in semiconductor optical waveguides. Recent experimental and theoretical results on enhancing the phase shift using optical filtering are presented and applications in microwave photonics are discussed.......We review the physics of slow and fast light effects in semiconductor optical waveguides. Recent experimental and theoretical results on enhancing the phase shift using optical filtering are presented and applications in microwave photonics are discussed....

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

DEFF Research Database (Denmark)

Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

2009-01-01

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

Rapid Automatic Lighting Control of a Mixed Light Source for Image Acquisition using Derivative Optimum Search Methods

Directory of Open Access Journals (Sweden)

Kim HyungTae

2015-01-01

Full Text Available Automatic lighting (auto-lighting is a function that maximizes the image quality of a vision inspection system by adjusting the light intensity and color.In most inspection systems, a single color light source is used, and an equal step search is employed to determine the maximum image quality. However, when a mixed light source is used, the number of iterations becomes large, and therefore, a rapid search method must be applied to reduce their number. Derivative optimum search methods follow the tangential direction of a function and are usually faster than other methods. In this study, multi-dimensional forms of derivative optimum search methods are applied to obtain the maximum image quality considering a mixed-light source. The auto-lighting algorithms were derived from the steepest descent and conjugate gradient methods, which have N-size inputs of driving voltage and one output of image quality. Experiments in which the proposed algorithm was applied to semiconductor patterns showed that a reduced number of iterations is required to determine the locally maximized image quality.

Slow and fast light effects in semiconductor waveguides for applications in microwave photonics

DEFF Research Database (Denmark)

Mørk, Jesper; Öhman, Filip; Xue, Weiqi

2008-01-01

We review the physics of slow and fast light effects in semiconductor waveguides. Different schemes for achieving optically or electronically controlled phase shifts are introduced and explained.......We review the physics of slow and fast light effects in semiconductor waveguides. Different schemes for achieving optically or electronically controlled phase shifts are introduced and explained....

Inelastic light scattering by low-lying excitations of electrons in low-dimensional semiconductors

Energy Technology Data Exchange (ETDEWEB)

Pellegrini, V. [NEST CNR-INFM and Scuola Normale Superiore, Pisa (Italy); Pinczuk, A. [Department of Physics, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States); Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey (United States)

2006-11-15

The low-dimensional electron systems that reside in artificial semiconductor heterostructures of great perfection are a contemporary materials base for explorations of collective phenomena. Studies of low-lying elementary excitations by inelastic light scattering offer insights on properties such energetics, interactions and spin magnetization. We review here recent light scattering results obtained from two-dimensional (2D) quantum fluids in semiconductor heterostructures under extreme conditions of low temperature and large magnetic field, where the quantum Hall phases are archetypes of novel behaviors. We also consider recent light scattering experiments that have probed the excitation spectra of few-electron states in semiconductor quantum dots. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

2017-01-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation......, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction...... power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination...

Microwave photonics processing controlling the speed of light in semiconductor waveguides

DEFF Research Database (Denmark)

Xue, Weiqi; Chen, Yaohui; Sales, Salvador

2009-01-01

We review the theory of slow and fast light effect in semiconductor waveguides and potential applications of these effects in microwave photonic systems as RF phase shifters. Recent applications as microwave photonic filters is presented. Also, in the presentation more applications like optoelect......We review the theory of slow and fast light effect in semiconductor waveguides and potential applications of these effects in microwave photonic systems as RF phase shifters. Recent applications as microwave photonic filters is presented. Also, in the presentation more applications like...

Deep ultraviolet semiconductor light sources for sensing and security

Science.gov (United States)

Shatalov, Max; Bilenko, Yuri; Yang, Jinwei; Gaska, Remis

2009-09-01

III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) rapidly penetrate into sensing market owing to several advantages over traditional UV sources (i.e. mercury, xenon and deuterium lamps). Small size, a wide choice of peak emission wavelengths, lower power consumption and reduced cost offer flexibility to system integrators. Short emission wavelength offer advantages for gas detection and optical sensing systems based on UV induced fluorescence. Large modulation bandwidth for these devices makes them attractive for frequency-domain spectroscopy. We will review present status of DUV LED technology and discuss recent advances in short wavelength emitters and high power LED lamps.

Modes in light wave propagating in semiconductor laser

Science.gov (United States)

Manko, Margarita A.

1994-01-01

The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

Light slow-down in semiconductor waveguides due to population pulsations

DEFF Research Database (Denmark)

Mørk, Jesper; Kjær, Rasmus; Poel, Mike van der

2005-01-01

This study theoretically analyzes the prospect of inducing light-slow down in a semiconductor waveguide based on coherent population oscillation. Experimental observations of the effect are also presented....

Experimental Demonstration and Theoretical Analysis of Slow Light in a Semiconductor Waveguide at GHz Frequencies

DEFF Research Database (Denmark)

Mørk, Jesper; Kjær, Rasmus; Poel, Mike van der

2005-01-01

Experimental demonstration and theoretical analysis of slow light in a semiconductor waveguide at GHz frequencies slow-down of light by a factor of two in a semiconductor waveguide at room temperature with a bandwidth of 16.7 GHz using the effect of coherent pulsations of the carrier density...

Single photon sources with single semiconductor quantum dots

Science.gov (United States)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Soft X-ray spectromicroscopy and application to semiconductor microstructure characterization

International Nuclear Information System (INIS)

Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z.; Warwick, A.; Padmore, H.A.; Triplett, B.B.

1997-01-01

The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved by conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at thr Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An Advanced Light Source μ-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers. (author)

Organic semiconductor heterojunctions and its application in organic light-emitting diodes

CERN Document Server

Ma, Dongge

2017-01-01

This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

Integrated Photonics Enabled by Slow Light

DEFF Research Database (Denmark)

Mørk, Jesper; Chen, Yuntian; Ek, Sara

2012-01-01

In this talk we will discuss the physics of slow light in semiconductor materials and in particular the possibilities offered for integrated photonics. This includes ultra-compact slow light enabled optical amplifiers, lasers and pulse sources.......In this talk we will discuss the physics of slow light in semiconductor materials and in particular the possibilities offered for integrated photonics. This includes ultra-compact slow light enabled optical amplifiers, lasers and pulse sources....

DUV light source availability improvement via further enhancement of gas management technologies

Science.gov (United States)

Riggs, Daniel J.; O'Brien, Kevin; Brown, Daniel J. W.

2011-04-01

The continuous evolution of the semiconductor market necessitates ever-increasing improvements in DUV light source uptime as defined in the SEMI E10 standard. Cymer is developing technologies to exceed current and projected light source availability requirements via significant reduction in light source downtime. As an example, consider discharge chamber gas management functions which comprise a sizable portion of DUV light source downtime. Cymer's recent introduction of Gas Lifetime Extension (GLXTM) as a productivity improvement technology for its DUV lithography light sources has demonstrated noteworthy reduction in downtime. This has been achieved by reducing the frequency of full gas replenishment events from once per 100 million pulses to as low as once per 2 billion pulses. Cymer has continued to develop relevant technologies that target further reduction in downtime associated with light source gas management functions. Cymer's current subject is the development of technologies to reduce downtime associated with gas state optimization (e.g. total chamber gas pressure) and gas life duration. Current gas state optimization involves execution of a manual procedure at regular intervals throughout the lifetime of light source core components. Cymer aims to introduce a product enhancement - iGLXTM - that eliminates the need for the manual procedure and, further, achieves 4 billion pulse gas lives. Projections of uptime on DUV light sources indicate that downtime associated with gas management will be reduced by 70% when compared with GLX2. In addition to reducing downtime, iGLX reduces DUV light source cost of operation by constraining gas usage. Usage of fluorine rich Halogen gas mix has been reduced by 20% over GLX2.

Aspects of a new light source

International Nuclear Information System (INIS)

Bagley, G.P.

1980-01-01

The National Synchrotron Light Source, under construction at Brookhaven Laboratory, will be a uniquely copious source of x-ray and ultraviolet photons with a wide spectrum. Some of the potential uses of this intense radiation include studies of absorption spectra, photoemission of electrons, x-ray scattering, biochemical studies and other areas of basic research. It can also be used for micro-lithography of integrated circuits for ultra dense semiconductor devices. The basic operation of the electron synchrotron is described. This includes the three step acceleration of the electrons thru a linear accelerator, a booster synchrotron and finally in a synchrotron storage ring. The synchrotron magnet power system, the responsibility of a black engineer, is described. An SCR chopper approach is used with precision components to achieve current stability and repeatability of .01%. This current generates the magnetic fields which bend and focus the electron beam

Aspects of a new light source

International Nuclear Information System (INIS)

Bagley, G.P.

1978-01-01

The National Synchrotron Light Source, under construction at Brookhaven Laboratory, will be a uniquely copious source of x-ray and ultraviolet photons with a wide spectrum. Some of the potential uses of this intense radiation include studies of absorption spectra, photo-emission of electrons, x-ray scattering, biochemical studies and other areas of basic research. It can also be used for micro-lithography of integrated circuits for ultra dense semiconductor devices. The basic operation of the electron synchrotron is described. This includes the three step acceleration of the electrons through a linear accelerator, a booster synchrotron and finally in a synchrotron storage ring. The synchrotron magnet power system, the responsibility of a black engineer, is described. An SCR chopper approach is used with precision components to achieve current stability and repeatability of 0.01 percent. This current generates the magnetic fields which bend and focus the electron beam

Facile synthesis and enhanced visible-light photocatalysis of graphitic carbon nitride composite semiconductors.

Science.gov (United States)

Li, Huiquan; Liu, Yuxing; Gao, Xing; Fu, Cong; Wang, Xinchen

2015-04-13

The semiconductor heterojunction has been an effective architecture to enhance photocatalytic activity by promoting photogenerated charge separation. Here, graphitic carbon nitride (CN) and B-modified graphitic carbon nitride (CNB) composite semiconductors were fabricated by a facile calcination process using cheap, sustainable, and easily available sodium tetraphenylboron and urea as precursors. The synthetic CN-CNB-25 semiconductor with a suitable CNB content showed the highest visible-light activity. Its degradation ratio for methyl orange and phenol was more than twice that of CN and CNB and its H2 evolution rate was ∼3.4 and ∼1.8 times higher than that of CN and CNB, respectively. It also displayed excellent stability and reusability. The enhanced activity of CN-CNB-25 was attributed predominantly to the efficient separation of photoinduced electrons and holes. This paper describes a visible-light-responsive CN composite semiconductor with great potential in environmental and energy applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hybrid artificial photosynthetic systems comprising semiconductors as light harvesters and biomimetic complexes as molecular cocatalysts.

Science.gov (United States)

Wen, Fuyu; Li, Can

2013-11-19

Solar fuel production through artificial photosynthesis may be a key to generating abundant and clean energy, thus addressing the high energy needs of the world's expanding population. As the crucial components of photosynthesis, the artificial photosynthetic system should be composed of a light harvester (e.g., semiconductor or molecular dye), a reduction cocatalyst (e.g., hydrogenase mimic, noble metal), and an oxidation cocatalyst (e.g., photosystem II mimic for oxygen evolution from water oxidation). Solar fuel production catalyzed by an artificial photosynthetic system starts from the absorption of sunlight by the light harvester, where charge separation takes place, followed by a charge transfer to the reduction and oxidation cocatalysts, where redox reaction processes occur. One of the most challenging problems is to develop an artificial photosynthetic solar fuel production system that is both highly efficient and stable. The assembly of cocatalysts on the semiconductor (light harvester) not only can facilitate the charge separation, but also can lower the activation energy or overpotential for the reactions. An efficient light harvester loaded with suitable reduction and oxidation cocatalysts is the key for high efficiency of artificial photosynthetic systems. In this Account, we describe our strategy of hybrid photocatalysts using semiconductors as light harvesters with biomimetic complexes as molecular cocatalysts to construct efficient and stable artificial photosynthetic systems. We chose semiconductor nanoparticles as light harvesters because of their broad spectral absorption and relatively robust properties compared with a natural photosynthesis system. Using biomimetic complexes as cocatalysts can significantly facilitate charge separation via fast charge transfer from the semiconductor to the molecular cocatalysts and also catalyze the chemical reactions of solar fuel production. The hybrid photocatalysts supply us with a platform to study the

Light sources and light pollution

International Nuclear Information System (INIS)

Pichler, G.

2005-01-01

From the dawn of mankind fire and light sources in general played an essential role in everyday life and protection over night. The development of new light sources went through many stages and is now an immense technological achievement, but also a threat for the wildlife at night, mainly because of the so-called light pollution. This paper discusses several very successful light sources connected with low pressure mercury and sodium vapour electric discharges. The luminous efficacy, colour rendering index and other lighting features cannot be always satisfactory, but at least some of the features can be much better than those met by the standard tungsten filament bulbs. High-pressure metal-vapour discharge lamps definitely have a good colour rendering index and a relatively high luminosity. Different light sources with burners at high pressure are discussed, paying special attention to their spectrum. The paper investigates new trends in development through a number of examples with non-toxic elements and pulsed electric discharge, which may be good news in terms of clean environment and energy savings. Light emitting diodes have recently appeared as worthy competitors to conventional light sources. White LEDs have approached 100 lumen/Watt efficacy in laboratories. This suggests that in some not very distant future they could completely replace high-pressure lamps, at least in indoor lighting. The article speculates on new developments which combine trends in nano technology and material science. The paper concludes with light pollution in view of several recent observations of plant and animal life at night in the vicinity of strong light sources. Photo-induced changes at the cell level may completely alter the normal life of plants and animals.(author)

III–V quantum light source and cavity-QED on Silicon

Science.gov (United States)

Luxmoore, I. J.; Toro, R.; Pozo-Zamudio, O. Del; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. PMID:23393621

III-V quantum light source and cavity-QED on silicon.

Science.gov (United States)

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Ag-based semiconductor photocatalysts in environmental purification

Energy Technology Data Exchange (ETDEWEB)

Li, Jiade; Fang, Wen [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Yu, Changlin, E-mail: yuchanglinjx@163.com [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); School of Environment Engineering and biology Engineering, Guangdong University of Petrochemical Technology, Maoming, 525000 Guangdong Province (China); Zhou, Wanqin [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, 350002 (China); Zhu, Lihua [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Xie, Yu, E-mail: xieyu_121@163.com [College of Environment and Chemical Engineering, Nanchang Hangkong University, Nanchang 330063, Jiangxi (China)

2015-12-15

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO{sub 2}, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Ag-based semiconductor photocatalysts in environmental purification

International Nuclear Information System (INIS)

Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; Zhu, Lihua; Xie, Yu

2015-01-01

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO 2 , ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

Science.gov (United States)

Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

2017-02-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

Slow and fast light effects in semiconductor waveguides for applications in microwave photonics

DEFF Research Database (Denmark)

Xue, Weiqi; Chen, Yaohui; Öhman, Filip

2009-01-01

We review the theory of slow and fast light effects due to coherent population oscillations in semiconductor waveguides, and potential applications of these effects in microwave photonic systems as RF phase shifters. In order to satisfy the application requirement of 360º RF phase shift at differ......We review the theory of slow and fast light effects due to coherent population oscillations in semiconductor waveguides, and potential applications of these effects in microwave photonic systems as RF phase shifters. In order to satisfy the application requirement of 360º RF phase shift...

Synchrotron applications of pixel and strip detectors at Diamond Light Source

International Nuclear Information System (INIS)

Marchal, J.; Tartoni, N.; Nave, C.

2009-01-01

A wide range of position-sensitive X-ray detectors have been commissioned on the synchrotron X-ray beamlines operating at the Diamond Light Source in UK. In addition to mature technologies such as image-plates, CCD-based detectors, multi-wire and micro-strip gas detectors, more recent detectors based on semiconductor pixel or strip sensors coupled to CMOS read-out chips are also in use for routine synchrotron X-ray diffraction and scattering experiments. The performance of several commercial and developmental pixel/strip detectors for synchrotron studies are discussed with emphasis on the image quality achieved with these devices. Examples of pixel or strip detector applications at Diamond Light Source as well as the status of the commissioning of these detectors on the beamlines are presented. Finally, priorities and ideas for future developments are discussed.

EDITORIAL: LED light sources (light for the future) LED light sources (light for the future)

Science.gov (United States)

Grandjean, N.

2010-09-01

Generating white light from electricity with maximum efficacy has been a long quest since the first incandescent lamp was invented by Edison at the end of the 19th century. Nowadays, semiconductors are making reality the holy grail of converting electrons into photons with 100% efficiency and with colours that can be mixed for white light illumination. The revolution in solid-state lighting (SSL) dates to 1994 when Nakamura reported the first high-brightness blue LED based on GaN semiconductors. Then, white light was produced by simply combining a blue dye with a yellow phosphor. After more than a decade of intensive research the performance of white LEDs is quite impressive, beating by far the luminous efficacy of compact fluorescent lamps. We are likely close to replacing our current lighting devices by SSL lamps. However, there are still technological and fabrication cost issues that could delay large market penetration of white LEDs. Interestingly, SSL may create novel ways of using light that could potentially limit electricity saving. Whatever the impact of SSL, it will be significant on our daily life. The purpose of this special cluster issue is to produce a snapshot of the current situation of SSL from different viewing angles. In an introductory paper, Tsao and co-workers from Sandia National Laboratories, present an energy-economics perspective of SSL considering societal changes and SSL technology evolution. In a second article, Narukawa et al working at Nichia Corporation—the pioneer and still the leading company in SSL—describe the state of the art of current research products. They demonstrate record performance with white LEDs exhibiting luminous efficacy of 183 lm W-1 at high-current injection. Then, a series of topical papers discuss in detail various aspects of the physics and technology of white LEDs Carrier localization in InGaN quantum wells has been considered the key to white LEDs' success despite the huge density of defects. A

Semiconductor research capabilities at the Lawrence Berkeley Laboratory

International Nuclear Information System (INIS)

1987-02-01

This document discusses semiconductor research capabilities (advanced materials, processing, packaging) and national user facilities (electron microscopy, heavy-ion accelerators, advanced light source)

Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning.

Science.gov (United States)

Schlesinger, R; Bianchi, F; Blumstengel, S; Christodoulou, C; Ovsyannikov, R; Kobin, B; Moudgil, K; Barlow, S; Hecht, S; Marder, S R; Henneberger, F; Koch, N

2015-04-15

The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach.

Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning

Science.gov (United States)

Schlesinger, R.; Bianchi, F.; Blumstengel, S.; Christodoulou, C.; Ovsyannikov, R.; Kobin, B.; Moudgil, K.; Barlow, S.; Hecht, S.; Marder, S.R.; Henneberger, F.; Koch, N.

2015-01-01

The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach. PMID:25872919

Structural Design Principle of Small-Molecule Organic Semiconductors for Metal-Free, Visible-Light-Promoted Photocatalysis.

Science.gov (United States)

Wang, Lei; Huang, Wei; Li, Run; Gehrig, Dominik; Blom, Paul W M; Landfester, Katharina; Zhang, Kai A I

2016-08-08

Herein, we report on the structural design principle of small-molecule organic semiconductors as metal-free, pure organic and visible light-active photocatalysts. Two series of electron-donor and acceptor-type organic semiconductor molecules were synthesized to meet crucial requirements, such as 1) absorption range in the visible region, 2) sufficient photoredox potential, and 3) long lifetime of photogenerated excitons. The photocatalytic activity was demonstrated in the intermolecular C-H functionalization of electron-rich heteroaromates with malonate derivatives. A mechanistic study of the light-induced electron transport between the organic photocatalyst, substrate, and the sacrificial agent are described. With their tunable absorption range and defined energy-band structure, the small-molecule organic semiconductors could offer a new class of metal-free and visible light-active photocatalysts for chemical reactions. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light absorption in disordered semiconductors with a random coulomb-type field

International Nuclear Information System (INIS)

Arbuzov, Yu.D.; Evdokimov, V.M.; Kolenkin, M.Yu.

1988-01-01

A method is proposed for the formulation of an asymptotic series for the light absorption coefficient in disordered semiconductors with a random field of the Coulomb type. It is shown that the series is obtained by expanding the exponent of an exponential function in powers of a parameter proportional to (E g - ℎω) -1/3 , where E g is the band gap of the semiconductor, and ℎω is the photon energy. The first three terms of the series are calculated in explicit form

Photocatalytic oxidation of organic compounds in a hybrid system composed of a molecular catalyst and visible light-absorbing semiconductor.

Science.gov (United States)

Zhou, Xu; Li, Fei; Li, Xiaona; Li, Hua; Wang, Yong; Sun, Licheng

2015-01-14

Photocatalytic oxidation of organic compounds proceeded efficiently in a hybrid system with ruthenium aqua complexes as catalysts, BiVO4 as a light absorber, [Co(NH3)5Cl](2+) as a sacrificial electron acceptor and water as an oxygen source. The photogenerated holes in the semiconductor are used to oxidize molecular catalysts into the high-valent Ru(IV)=O intermediates for 2e(-) oxidation.

[Hygienic aspects of the use of LED light sources for general illumination in schools].

Science.gov (United States)

Kuchma, V R; Sukhareva, L M; Teksheva, L M; Stepanova, M I; Sazaniuk, Z I

2013-01-01

For the time present becoming more common semiconductor sources of artificial lighting has become a more and more frequent practice. With the aim to study the impact of LEDs on the health of schoolchildren studies in experimental conditions (specially equipped classrooms) were performed. The comparative analysis of the state of vision, mental health and emotional state of pupils in primary, middle and high schools under fluorescent and LED lighting, meeting to the regulatory requirements, has revealed that the physiological cost of schooling in the use of LED units in classrooms is lower than in a traditional, fluorescent lighting.

Spectral confocal reflection microscopy using a white light source

Science.gov (United States)

Booth, M.; Juškaitis, R.; Wilson, T.

2008-08-01

We present a reflection confocal microscope incorporating a white light supercontinuum source and spectral detection. The microscope provides images resolved spatially in three-dimensions, in addition to spectral resolution covering the wavelength range 450-650nm. Images and reflection spectra of artificial and natural specimens are presented, showing features that are not normally revealed in conventional microscopes or confocal microscopes using discrete line lasers. The specimens include thin film structures on semiconductor chips, iridescent structures in Papilio blumei butterfly scales, nacre from abalone shells and opal gemstones. Quantitative size and refractive index measurements of transparent beads are derived from spectral interference bands.

Performance Evaluation of Three-Level Z-Source Inverters Under Semiconductor Failure Conditions

DEFF Research Database (Denmark)

Gao, Feng; Loh, P.C.; Vilathgamuwa, D.M.

2007-01-01

reconfigure the gating signals in order to tolerate the failed semiconductor devices without significantly decreasing the ac output quality and amplitude by properly using the inherent boost characteristic of Z-source network. In addition, the Z-source dual inverters can maintain the zero common mode voltage...... under semiconductor failure conditions, which is the unique characteristic attained by the dual inverters only. Lastly, all theoretical findings are verified in PLECS simulations....

Performance Evaluation of Three-Level Z-Source Inverters Under Semiconductor-Failure Conditions

DEFF Research Database (Denmark)

Gao, Feng; Loh, Poh Chiang; Blaabjerg, Frede

2009-01-01

This paper evaluates and proposes various compensation methods for three-level Z-source inverters under semiconductor-failure conditions. Unlike the fault-tolerant techniques used in traditional three-level inverters, where either an extra phase-leg or collective switching states are used......, the proposed methods for three-level Z-source inverters simply reconfigure their relevant gating signals so as to ride-through the failed semiconductor conditions smoothly without any significant decrease in their ac-output quality and amplitude. These features are partly attributed to the inherent boost...... under semiconductor-failure conditions. For verifying these described performance features, PLECS simulation and experimental testing were performed with some results captured and shown in a later section for visual confirmation....

Photonic crystal light source

Science.gov (United States)

Fleming, James G [Albuquerque, NM; Lin, Shawn-Yu [Albuquerque, NM; Bur, James A [Corrales, NM

2004-07-27

A light source is provided by a photonic crystal having an enhanced photonic density-of-states over a band of frequencies and wherein at least one of the dielectric materials of the photonic crystal has a complex dielectric constant, thereby producing enhanced light emission at the band of frequencies when the photonic crystal is heated. The dielectric material can be a metal, such as tungsten. The spectral properties of the light source can be easily tuned by modification of the photonic crystal structure and materials. The photonic crystal light source can be heated electrically or other heating means. The light source can further include additional photonic crystals that exhibit enhanced light emission at a different band of frequencies to provide for color mixing. The photonic crystal light source may have applications in optical telecommunications, information displays, energy conversion, sensors, and other optical applications.

POWER, METALLURGICAL AND CHEMICAL MECHANICAL ENGINEERING THERMOELECTRIC EVENTS IN LIGHT-EMITTING BIPOLAR SEMICONDUCTOR STRUCTURES

Directory of Open Access Journals (Sweden)

P. A. Magomedova

2017-01-01

Full Text Available Objective. The development of light-emitting bipolar semiconductor structures having a low level of parasitic heat release.Methods. A method for converting thermoelectric heat in bipolar semiconductor structures into optical radiation to divert the excess energy into the environment was developed. At the same time, the cooling effect on thermoelectric junctions remains. Instead of an inertial process of conductive or convective heat transfer, practically instantaneous heat removal from electronic components to the environment takes place.Results. As a result, light-emitting bipolar semiconductor structures will allow more powerful devices with greater speed and degree of integration to be created. It is possible to produce transparent LED matrices with a two-way arrangement of transparent solar cells and mirror metal electrodes along the perimeter. When current is applied, the LED matrix on one of the transitions will absorb thermal energy; on other electrodes, it will emit radiation that is completely recovered into electricity by means of transparent solar cells following repeated reflection between the mirror electrodes. The low efficiency of solar cells will be completely compensated for with the multiple passages of photons through these batteries.Conclusion. Light-emitting bipolar semiconductor structures will not only improve the reliability of electronic components in a wide range of performance characteristics, but also improve energy efficiency through the use of optical radiation recovery. Semiconductor thermoelectric devices using optical phenomena in conjunction with the Peltier effect allow a wide range of energy-efficient components of radio electronic equipment to be realised, both for discrete electronics and for microsystem techniques. Systems for obtaining ultra-low temperatures in order to achieve superconductivity are of particular value. 

III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

International Nuclear Information System (INIS)

Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

1984-01-01

Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

Long-term storage life of light source modules by temperature cycling accelerated life test

International Nuclear Information System (INIS)

Sun Ningning; Tan Manqing; Li Ping; Jiao Jian; Guo Xiaofeng; Guo Wentao

2014-01-01

Light source modules are the most crucial and fragile devices that affect the life and reliability of the interferometric fiber optic gyroscope (IFOG). While the light emitting chips were stable in most cases, the module packaging proved to be less satisfactory. In long-term storage or the working environment, the ambient temperature changes constantly and thus the packaging and coupling performance of light source modules are more likely to degrade slowly due to different materials with different coefficients of thermal expansion in the bonding interface. A constant temperature accelerated life test cannot evaluate the impact of temperature variation on the performance of a module package, so the temperature cycling accelerated life test was studied. The main failure mechanism affecting light source modules is package failure due to solder fatigue failure including a fiber coupling shift, loss of cooling efficiency and thermal resistor degradation, so the Norris-Landzberg model was used to model solder fatigue life and determine the activation energy related to solder fatigue failure mechanism. By analyzing the test data, activation energy was determined and then the mean life of light source modules in different storage environments with a continuously changing temperature was simulated, which has provided direct reference data for the storage life prediction of IFOG. (semiconductor devices)

Slow light and pulse propagation in semiconductor waveguides

DEFF Research Database (Denmark)

Hansen, Per Lunnemann

This thesis concerns the propagation of optical pulses in semiconductor waveguide structures with particular focus on methods for achieving slow light or signal delays. Experimental pulse propagation measurements of pulses with a duration of 180 fs, transmitted through quantum well based waveguide...... structures, are presented. Simultaneous measurements of the pulse transmission and delay are measured as a function of input pulse energy for various applied electrical potentials. Electrically controlled pulse delay and advancement are demonstrated and compared with a theoretical model. The limits...... of the model as well as the underlying physical mechanisms are analysed and discussed. A method to achieve slow light by electromagnetically induced transparency (EIT) in an inhomogeneously broadened quantum dot medium is proposed. The basic principles of EIT are assessed and the main dissimilarities between...

Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

Science.gov (United States)

Liang, Yu-Han

Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

OpenAIRE

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incand...

Contacts to semiconductors

International Nuclear Information System (INIS)

Tove, P.A.

1975-08-01

Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

Spectrum analysis of a voltage source converter due to semiconductor voltage drops

DEFF Research Database (Denmark)

Rasmussen, Tonny Wederberg; Eltouki, Mustafa

2017-01-01

It is known that power electronic voltage source converters are non-ideal. This paper presents a state-of-the-art review on the effect of semiconductor voltage drop on the output voltage spectrum, using single-phase H-bridge two-level converter topology with natural sampled pulse width modulation....... The paper describes the analysis of output voltage spectrum, when the semiconductor voltage drop is added. The results of the analysis of the spectral contribution including and excluding semiconductor voltage drop reveal a good agreement between the theoretical results, simulations and laboratory...

Compact RGBY light sources with high luminance for laser display applications

Science.gov (United States)

Paschke, Katrin; Blume, Gunnar; Werner, Nils; Müller, André; Sumpf, Bernd; Pohl, Johannes; Feise, David; Ressel, Peter; Sahm, Alexander; Bege, Roland; Hofmann, Julian; Jedrzejczyk, Daniel; Tränkle, Günther

2018-02-01

Watt-class visible laser light with a high luminance can be created with high-power GaAs-based lasers either directly in the red spectral region or using single-pass second harmonic generation (SHG) for the colors in the blue-yellow spectral region. The concepts and results of red- and near infrared-emitting distributed Bragg reflector tapered lasers and master oscillator power amplifier systems as well as their application for SHG bench-top experiments and miniaturized modules are presented. Examples of these high-luminance light sources aiming at different applications such as flying spot display or holographic 3D cinema are discussed in more detail. The semiconductor material allows an easy adaptation of the wavelength allowing techniques such as six-primary color 3D projection or color space enhancement by adding a fourth yellow color.

Optically coupled semiconductor device

Energy Technology Data Exchange (ETDEWEB)

Kumagaya, Naoki

1988-11-18

This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

Science.gov (United States)

Jung, Mi; Kim, Jae Hun; Lee, Seok; Jang, Byung Jin; Lee, Woo Young; Oh, Yoo-Mi; Park, Sun-Woo; Woo, Deokha

2012-07-01

A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

Visible light photoreduction of CO.sub.2 using heterostructured catalysts

Science.gov (United States)

Matranga, Christopher; Thompson, Robert L; Wang, Congjun

2015-03-24

The method provides for use of sensitized photocatalyst for the photocatalytic reduction of CO.sub.2 under visible light illumination. The photosensitized catalyst is comprised of a wide band gap semiconductor material, a transition metal co-catalyst, and a semiconductor sensitizer. The semiconductor sensitizer is photoexcited by visible light and forms a Type II band alignment with the wide band gap semiconductor material. The wide band gap semiconductor material and the semiconductor sensitizer may be a plurality of particles, and the particle diameters may be selected to accomplish desired band widths and optimize charge injection under visible light illumination by utilizing quantum size effects. In a particular embodiment, CO.sub.2 is reduced under visible light illumination using a CdSe/Pt/TiO2 sensitized photocatalyst with H.sub.2O as a hydrogen source.

Slow and fast light effects in semiconductor optical amplifiers for applications in microwave photonics

DEFF Research Database (Denmark)

Xue, Weiqi

This thesis analyzes semiconductor optical amplifiers based slow and fast light effects with particular focus on the applications in microwave photonics. We conceive novel ideas and demonstrate a great enhancement of light slow down. Furthermore, by cascading several slow light stages, >360 degree...... microwave phase shifts over a bandwidth of several tens of gigahertz are achieved. These also satisfy the basic requirements of microwave photonic systems. As an application demonstration, a tunable microwave notch filter is realized, where slow light based phase shifters provide 100% fractional tuning over...

Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.

Science.gov (United States)

Jeong, Seonghoon; Oh, Seung Kyu; Ryou, Jae-Hyun; Ahn, Kwang-Soon; Song, Keun Man; Kim, Hyunsoo

2018-01-31

Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level without the wavelength conversion through packaged phosphors or chip integration for photon recycling are of particular importance to produce compact, cost-competitive, and smart lighting sources. In this study, monolithic white LEDs were developed based on ZnO/GaN semiconductor heterojunctions. The electroluminescence (EL) wavelength of the ZnO/GaN heterojunction could be tuned by a post-thermal annealing process, causing the generation of an interfacial Ga 2 O 3 layer. Ultraviolet, violet-bluish, and greenish-yellow broad bands were observed from n-ZnO/p-GaN without an interfacial layer, whereas a strong greenish-yellow band emission was the only one observed from that with an interfacial layer. By controlled integration of ZnO/GaN heterojunctions with different postannealing conditions, monolithic white LED was demonstrated with color coordinates in the range (0.3534, 0.3710)-(0.4197, 0.4080) and color temperatures of 4778-3349 K in the Commission Internationale de l'Eclairage 1931 chromaticity diagram. Furthermore, the monolithic white LED produced approximately 2.1 times higher optical output power than a conventional ZnO/GaN heterojunction due to the carrier confinement effect at the Ga 2 O 3 /n-ZnO interface.

Efficient semiconductor multicycle terahertz pulse source

Science.gov (United States)

Nugraha, P. S.; Krizsán, G.; Polónyi, Gy; Mechler, M. I.; Hebling, J.; Tóth, Gy; Fülöp, J. A.

2018-05-01

Multicycle THz pulse generation by optical rectification in GaP semiconductor nonlinear material is investigated by numerical simulations. It is shown that GaP can be an efficient and versatile source with up to about 8% conversion efficiency and a tuning range from 0.1 THz to about 7 THz. Contact-grating technology for pulse-front tilt can ensure an excellent focusability and scaling the THz pulse energy beyond 1 mJ. Shapeable infrared pump pulses with a constant intensity-modulation period can be delivered for example by a flexible and efficient dual-chirped optical parametric amplifier. Potential applications include linear and nonlinear THz spectroscopy and THz-driven acceleration of electrons.

Fiber-based broadband black-light source

OpenAIRE

Sylvestre , Thibaut; Lee , Min Won; Ragueh , A. R.; Stiller , Birgit; Fanjoux , Gil; Barviau , B.; Mussot , A.; Kudlinski , A.

2012-01-01

International audience; Black-Light or Wood's lamp refers to sources that emit long-wavelength ultraviolet radiation (UV-A) from 315 nm and little visible light till 410 nm (blue). In this paper, we present a new fibre-based source of "black light", a source that emits broadband ultraviolet radiation but only small amounts of visible light and no infrared light. We made this source by pumping a specially designed silica photonic crystal fibre (PCF) with 355 nm light pulses from a Q-switched f...

Development of a circadian light source

Science.gov (United States)

Nicol, David B.; Ferguson, Ian T.

2002-11-01

Solid state lighting presents a new paradigm for lighting - controllability. Certain characteristics of the lighting environment can be manipulated, because of the possibility of using multiple LEDs of different emission wavelengths as the illumination source. This will provide a new, versatile, general illumination source due to the ability to vary the spectral power distribution. New effects beyond the visual may be achieved that are not possible with conventional light sources. Illumination has long been the primary function of lighting but as the lighting industry has matured the psychological aspects of lighting have been considered by designers; for example, choosing a particular lighting distribution or color variation in retail applications. The next step in the evolution of light is to consider the physiological effects of lighting that cause biological changes in a person within the environment. This work presents the development of a source that may have important bearing on this area of lighting. A circadian light source has been developed to provide an illumination source that works by modulating its correlated color temperature to mimic the changes in natural daylight through the day. In addition, this source can cause or control physiological effects for a person illuminated by it. The importance of this is seen in the human circadian rhythm's peak response corresponding to blue light at ~460 nm which corresponds to the primary spectral difference in increasing color temperature. The device works by adding blue light to a broadband source or mixing polychromatic light to mimic the variation of color temperature observed for the Planckian Locus on the CIE diagram. This device can have several applications including: a tool for researchers in this area, a general illumination lighting technology, and a light therapy device.

Increasing the brightness of light sources

Energy Technology Data Exchange (ETDEWEB)

Fu, Ling

2006-11-16

In this work the principle of light recycling is applied to artificial light sources in order to achieve brightness enhancement. Firstly, the feasibilities of increasing the brightness of light sources via light recycling are examined theoretically, based on the fundamental laws of thermodynamics including Kirchhoff's law on radiation, Planck's law, Lambert-Beer's law, the etendue conservation and the brightness theorem. From an experimental viewpoint, the radiation properties of three different kinds of light sources including short-arc lamps, incandescent lamps and LEDs characterized by their light-generating mechanisms are investigated. These three types of sources are used in light recycling experiments, for the purpose of 1. validating the intrinsic light recycling effect in light sources, e. g. the intrinsic light recycling effect in incandescent lamps stemming from the coiled filament structure. 2. acquiring the required parameters for establishing physical models, e.g. the emissivity/absorptivity of the short-arc lamps, the intrinsic reflectivity and the external quantum efficiency of LEDs. 3. laying the foundations for designing optics aimed at brightness enhancement according to the characteristics of the sources and applications. Based on the fundamental laws and experiments, two physical models for simulating the radiance distribution of light sources are established, one for thermal filament lamps, the other for luminescent sources, LEDs. As validation of the theoretical and experimental investigation of the light recycling effect, an optical device, the Carambola, is designed for achieving deterministic and multiple light recycling. The Carambola has the function of a concentrator. In order to achieve the maximum possible brightness enhancement with the Carambola, several combinations of sources and Carambolas are modelled in ray-tracing simulations. Sources with different light-emitting mechanisms and different radiation properties

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

Science.gov (United States)

Narang, Prineha

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the

Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

Science.gov (United States)

Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

1998-01-01

The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

Engineering of Semiconductor Nanocrystals for Light Emitting Applications

Directory of Open Access Journals (Sweden)

Francesco Todescato

2016-08-01

Full Text Available Semiconductor nanocrystals are rapidly spreading into the display and lighting markets. Compared with liquid crystal and organic LED displays, nanocrystalline quantum dots (QDs provide highly saturated colors, wide color gamut, resolution, rapid response time, optical efficiency, durability and low cost. This remarkable progress has been made possible by the rapid advances in the synthesis of colloidal QDs and by the progress in understanding the intriguing new physics exhibited by these nanoparticles. In this review, we provide support to the idea that suitably engineered core/graded-shell QDs exhibit exceptionally favorable optical properties, photoluminescence and optical gain, while keeping the synthesis facile and producing QDs well suited for light emitting applications. Solid-state laser emitters can greatly profit from QDs as efficient gain materials. Progress towards fabricating low threshold, solution processed DFB lasers that are optically pumped using one- and two-photon absorption is reviewed. In the field of display technologies, the exploitation of the exceptional photoluminescence properties of QDs for LCD backlighting has already advanced to commercial levels. The next big challenge is to develop the electroluminescence properties of QD to a similar state. We present an overview of QLED devices and of the great perspectives for next generation display and lighting technologies.

Light Sources and Lighting Circuits

Science.gov (United States)

Honda, Hisashi; Suwa, Takumi; Yasuda, Takeo; Ohtani, Yoshihiko; Maehara, Akiyoshi; Okada, Atsunori; Komatsu, Naoki; Mannami, Tomoaki

According to the Machinery Statistics of the Ministry of Economy, Trade and Industry, the production of incandescent lamps in Japan in 2007 was 990 million units (90.0% of the previous year's total), in which the production of incandescent lamps for general lighting was 110 million units (90.0% of the previous year's total) and of tungsten-halogen lamps was 44 million units (96.6% of the previous year's total). The production of fluorescent lamps was 927 million units (93.9% of the previous year's total), in which general fluorescent lamps, excluding those for LCD back lighting, was 320 million units (87.2% of the previous year's total). Also, the production of HID lamps was 10 million units (101.5% of the previous year's total). On the other hand, when the numbers of sales are compared with the sales of the previous year, incandescent lamps for general use was 99.8%, tungsten-halogen lamps was 96.9%, fluorescent lamps was 95.9%, and HID lamps was 98.9%. Self-ballasted fluorescent lamps alone showed an increase in sales as strong as 29 million units, or 121.7% of the previous year's sales. It is considered that the switchover of incandescent lamps to HID lamps was promoted for energy conservation and carbon dioxide reduction with the problem of global warming in the background. In regard to exhibitions, Lighting Fair 2007 was held in Tokyo in March, and LIGHTFAIR INTERNATIONAL 2007 was held in New York in May. Regarding academic conferences, LS:11 (the 11th International Symposium on the Science & Technology of Light Sources) was held in Shanghai in May, and the First International Conference on White LEDs and Solid State Lighting was held in Tokyo in November. Both conferences suggested that there are strong needs and concerns now about energy conservation, saving natural resources, and restrictions of hazardous materials. In regard to incandescent lamps, the development of products aiming at higher efficacy, electric power savings, and longer life was advanced by

Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

Directory of Open Access Journals (Sweden)

Vincenzo Spagnolo

2009-12-01

Full Text Available The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques.

Metal-insulator-semiconductor photodetectors.

Science.gov (United States)

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Metal-Insulator-Semiconductor Photodetectors

Directory of Open Access Journals (Sweden)

Chu-Hsuan Lin

2010-09-01

Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Science research with high-brilliance synchrotron light source

International Nuclear Information System (INIS)

Sanyal, Milan K.

2013-01-01

Synchrotron-science has changed dramatically since the development of high brilliance electron accelerator-based light sources in 1990s. In the last twenty years or so, several such facilities have come up, particularly in developed countries, as material characterizations in relevant atmosphere and protein crystallography with tiny-crystals have strong implications in industrial competitiveness. Moreover several new techniques have been developed recently over the entire spectral range of emitted light, from infra-red to high energy X-rays, which have altered our basic understanding of various materials like biomaterials, nanomaterials, soft-matter and semiconductor quantum structures. In addition, rapid development of various X-ray imaging techniques for nondestructive evaluation of compositional/structural homogeneity of engineering materials with nanometer resolution will have tremendous impact in manufacturing industries. As India becomes a developed country, it must have access to such an advanced synchrotron facility in the country that enables knowledge generation in the ever-expanding fields of design-characterization-production of advanced materials and modern medicines. Development of such state-of-the art facility will also enable us to carry out frontier-basic-research in our own country and help us to retain and bring back Indian talents to India. Here we shall discuss briefly the characteristics of a high brilliance synchrotron source and outline the nature of basic and applied science research that can be done with such a state-of-the-art facility. (author)

Reflection technique for thermal mapping of semiconductors

Science.gov (United States)

Walter, Martin J.

1989-06-20

Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

Design of a photonic integrated circuit (pic) in silicon on isolator (soi) technology for a novel chaotic integrated laser light source (chill)

NARCIS (Netherlands)

Westerveld, W.J.

2009-01-01

A light source with the brightness of a laser but the bandwidth of a LED is required for different fields of applications, such as inspection and metrology in the semiconductor industry, data encryption in telecommunications and LIDAR. Currently, this issue is addressed by so-called coherence

Organic semiconductors in a spin

CERN Document Server

Samuel, I

2002-01-01

A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

Review on the dynamics of semiconductor nanowire lasers

Science.gov (United States)

Röder, Robert; Ronning, Carsten

2018-03-01

Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

Semiconductor Quantum Dash Broadband Emitters: Modeling and Experiments

KAUST Repository

Khan, Mohammed Zahed Mustafa

2013-10-01

Broadband light emitters operation, which covers multiple wavelengths of the electromagnetic spectrum, has been established as an indispensable element to the human kind, continuously advancing the living standard by serving as sources in important multi-disciplinary field applications such as biomedical imaging and sensing, general lighting and internet and mobile phone connectivity. In general, most commercial broadband light sources relies on complex systems for broadband light generation which are bulky, and energy hungry. \\tRecent demonstration of ultra-broadband emission from semiconductor light sources in the form of superluminescent light emitting diodes (SLDs) has paved way in realization of broadband emitters on a completely novel platform, which offered compactness, cost effectiveness, and comparatively energy efficient, and are already serving as a key component in medical imaging systems. The low power-bandwidth product is inherent in SLDs operating in the amplified spontaneous emission regime. A quantum leap in the advancement of broadband emitters, in which high power and large bandwidth (in tens of nm) are in demand. Recently, the birth of a new class of broadband semiconductor laser diode (LDs) producing multiple wavelength light in stimulated emission regime was demonstrated. This very recent manifestation of a high power-bandwidth-product semiconductor broadband LDs relies on interband optical transitions via quantum confined dot/dash nanostructures and exploiting the natural inhomogeneity of the self-assembled growth technology. This concept is highly interesting and extending the broad spectrum of stimulated emission by novel device design forms the central focus of this dissertation. \\tIn this work, a simple rate equation numerical technique for modeling InAs/InP quantum dash laser incorporating the properties of inhomogeneous broadening effect on lasing spectra was developed and discussed, followed by a comprehensive experimental analysis

Semiconductor Nanocrystals as Light Harvesters in Solar Cells.

Science.gov (United States)

Etgar, Lioz

2013-02-04

Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered.

Semiconductor Nanocrystals as Light Harvesters in Solar Cells

Directory of Open Access Journals (Sweden)

Lioz Etgar

2013-02-01

Full Text Available Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered.

Semiconductor Nanocrystals as Light Harvesters in Solar Cells

Science.gov (United States)

Etgar, Lioz

2013-01-01

Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered. PMID:28809318

Radio-isotope powered light source

International Nuclear Information System (INIS)

Spottiswoode, N.L.; Ryden, D.J.

1979-01-01

The light source described comprises a radioisotope fuel source, thermal insulation against heat loss, a biological shield against the escape of ionizing radiation and a material having a surface which attains incandescence when subject to isotope decay heat. There is then a means for transferring this heat to produce incandescence of the surface and thus emit light. A filter associated with the surface permits a relatively high transmission of visible radiation but has a relatively high reflectance in the infra red spectrum. Such light sources require the minimum of attention and servicing and are therefore suitable for use in navigational aids such as lighthouses and lighted buoys. The isotope fuel sources and thus the insulation and shielding and the incandescent material can be chosen for the use required and several sources, materials, means of housing etc. are detailed. Operation and efficiency are discussed. (U.K.)

Overview of light sources powered by tritium

International Nuclear Information System (INIS)

Wu Jian; Lei Jiarong; Liu Wenke

2012-01-01

Due to their long lifespan and stable intensity, light sources initiated by tritium instead of electricity or batteries are suitable for low level lighting applications. Therefore, tritium-based radioluminescent (RL) light sources are widely used in both military and civil applications. However, traditional tritium lights with the gas tube structure have several shortcomings: (1) the phosphors are opaque; (2) the glass tube is fragile and easily broken; and (3) the beta kinetic energy is attenuated due to the sorption by the gas; etc. As a result, further application of the tritium lights is limited. In this paper, the lighting mechanism and radiation safety of tritium-based RL light sources are briefly reviewed. Besides, the history and prospects of the development of tritium-based RL light source are discussed. Due to their long lifespan and stable intensity, light sources initiated by tritium instead of electricity or batteries are suitable for low level lighting applications. Therefore, tritium- based radioluminescent (RL) light sources are widely used in both military and civil applications. However, traditional tritium lights with the gas tube structure have several short- comings: (1) the phosphors are opaque; (2) the glass tube is fragile and easily broken; and (3) the beta kinetic energy is attenuated due to the sorption by the gas; etc. As a result, further application of the tritium lights is limited. In this paper, the lighting mechanism and radiation safety of tritium-based RL, light sources are briefly reviewed. Besides, the history and prospects of the development of tritium-based RL light source are discussed. (authors)

COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

DEFF Research Database (Denmark)

2009-01-01

The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...... for generation of a detector signal by mixing of the reference beam with light emitted from the particles in the measurement volume illuminated by the measurement beam, and a signal processor for generating a velocity signal corresponding to the velocity of the particles based on the detector signal....

Calibration and check light source

Energy Technology Data Exchange (ETDEWEB)

Nejedla, B; Krotil, J

1979-02-15

The light source is designed for calibrating photomultipliers and checking the function of the thermoluminescent dosemeters evaluation equipment. The check light source consists of a polymer material-based (polyvinyl toluene) plastic scintillator and a 2-phenyl-5-(4-bisphenyl)-1,3,4-oxadiazol and/or paraterphenyl activator, and of emission spectrum shifters for response in the green and the blue light regions. The plastic scintillator is sealed in a case to whose bottom a radiation source is fixed, such as a /sup 90/Sr-/sup 90/Y source of an activity of 1.85x10/sup 3/s/sup -1/ to 0.74x10/sup 9/s/sup -1/.

Light Scattering in Solid IX

CERN Document Server

Cardona, Manuel

2007-01-01

This is the ninth volume of a well-established series in which expert practitioners discuss topical aspects of light scattering in solids. It reviews recent developments concerning mainly semiconductor nanostructures and inelastic x-ray scattering, including both coherent time-domain and spontaneous scattering studies. In the past few years, light scattering has become one of the most important research and characterization methods for studying carbon nanotubes and semiconducting quantum dots, and a crucial tool for exploring the coupled exciton--photon system in semiconductor cavities. Among the novel techniques discussed in this volume are pump--probe ultrafast measurements and those which use synchrotron radiation as light source. The book addresses improvements in the intensity, beam quality and time synchronization of modern synchrotron sources, which made it possible to measure the phonon dispersion in very small samples and to determine electronic energy bands as well as enabling real-time observations...

Effects of read-out light sources and ambient light on radiochromic film

International Nuclear Information System (INIS)

Butson, Martin J.; Yu, Peter K.N.; Metcalfe, Peter E.

1998-01-01

Both read-out light sources and ambient light sources can produce a marked effect on coloration of radiochromic film. Fluorescent, helium neon laser, light emitting diode (LED) and incandescent read-out light sources produce an equivalent dose coloration of 660 cGy h -1 , 4.3 cGy h -1 , 1.7 cGy h -1 and 2.6 cGy h -1 respectively. Direct sunlight, fluorescent light and incandescent ambient light produce an equivalent dose coloration of 30 cGy h -1 , 18 cGy h -1 and 0 cGy h -1 respectively. Continuously on, fluorescent light sources should not be used for film optical density evaluation and minimal exposure to any light source will increase the accuracy of results. (author)

Soft X-ray spectromicroscopy and its application to semiconductor microstructure characterization

International Nuclear Information System (INIS)

Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z.

1996-01-01

The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An ALS(mu)-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers

Advanced Light Source (ALS)

Data.gov (United States)

Federal Laboratory Consortium — The Advanced Light Source (ALS), a world leader in soft x-ray science, generates light in the wavelengths needed for examining the atomic and electronic structure of...

Synchrotron light source data book

International Nuclear Information System (INIS)

Murphy, J.

1989-01-01

The ''Synchrotron Light Source Data Book'' is as its name implies a collection of data on existing and planned synchrotron light sources. The intention was to provide a compendium of tools for the design of electron storage rings as synchrotron radiation sources. The slant is toward the accelerator physicist as other booklets such as the X-ray Data Booklet, edited by D. Vaughan (LBL PUB-490), address the 'use' of synchrotron radiation. It is hoped that the booklet serves as a pocket sized reference to facilitate back of the envelope type calculations. It contains some useful formulae in 'practical units' and a brief description of many of the existing and planned light source lattices

Standard light source utilizing spontaneous radiation

International Nuclear Information System (INIS)

Yamamoto, O.; Takenaga, M.; Tsujimoto, Y.

1975-01-01

A standard light source is described utilizing spontaneous radiation made by mixing a fluorescent substance LnVO 4 :X (wherein Ln is Y or Gd, and X is Dy or Eu) with a radioactive substance containing a radioactive isotope which is less in the degree of temperature variation of the intensity of emitted light and excellent in stability. Particularly when used in a light-receiving device having photomultiplier tubes, the said light source emits light quite similar to that of a thermoluminescent substance such as CaSO 4 :X (wherein X is Im, Dy, Sm or Mn), LiF or Mg 2 SiO 4 :Tb, and is excellent as a calibration high-stability standard light source for use in the above-mentioned light-receiving device. (auth)

Development of high-efficiency electric-optic conversion compound semiconductor - Lighting of the 21st century. Collection of essays; Kokoritsu denko henkan kagobutsu handotai kaihatsu (21 seiki no akari) seika ronbunshu

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-10-01

Collected in this volume are essays made public in 1998-2001 under the above-named development project intended at the practical application of an illumination light source using light-emission diodes (LED) whose energy consumption efficiency will be approximately twice as high as that of the fluorescent lamp. The project aims to develop a blue/ultraviolet LED capable of high-efficiency light emission at approximately 400 nm and a fluorescent substance capable of efficient radiation of white light as excited by the said LED and to eventually combine the two for the embodiment of a 80-100 lm/W light source device. Being conducted in the field of basics of physical properties, light-emission mechanism, and crystal growth are the elucidation of the physical properties and light-emission mechanism of GaN-based compound semiconductor materials, basic studies of bulk single crystal GaN grown by the solution growth method, studies of substrate crystal surface properties, research and development of GaNAsP-based multi-color luminescent materials, etc. Studies are also under way for the research and development of LED substrates, epitaxial LED devices, and light-source devices. (NEDO)

A compact, coherent light source system architecture

Science.gov (United States)

Biedron, S. G.; Dattoli, G.; DiPalma, E.; Einstein, J.; Milton, S. V.; Petrillo, V.; Rau, J. V.; Sabia, E.; Spassovsky, I. P.; van der Slot, P. J. M.

2016-09-01

Our team has been examining several architectures for short-wavelength, coherent light sources. We are presently exploring the use and role of advanced, high-peak power lasers for both accelerating the electrons and generating a compact light source with the same laser. Our overall goal is to devise light sources that are more accessible by industry and in smaller laboratory settings. Although we cannot and do not want to compete directly with sources such as third-generation light sources or that of national-laboratory-based free-electron lasers, we have several interesting schemes that could bring useful and more coherent, short-wavelength light source to more researchers. Here, we present and discuss several results of recent simulations and our future steps for such dissemination.

Development and evaluation of a light-emitting diode endoscopic light source

Science.gov (United States)

Clancy, Neil T.; Li, Rui; Rogers, Kevin; Driscoll, Paul; Excel, Peter; Yandle, Ron; Hanna, George; Copner, Nigel; Elson, Daniel S.

2012-03-01

Light-emitting diode (LED) based endoscopic illumination devices have been shown to have several benefits over arclamp systems. LEDs are energy-efficient, small, durable, and inexpensive, however their use in endoscopy has been limited by the difficulty in efficiently coupling enough light into the endoscopic light cable. We have demonstrated a highly homogenised lightpipe LED light source that combines the light from four Luminus LEDs emitting in the red, green, blue and violet using innovative dichroics that maximise light throughput. The light source spectrally combines light from highly divergent incoherent sources that have a Lambertian intensity profile to provide illumination matched to the acceptance numerical aperture of a liquid light guide or fibre bundle. The LED light source was coupled to a standard laparoscope and performance parameters (power, luminance, colour temperature) compared to a xenon lamp. Although the total illuminance from the endoscope was lower, adjustment of the LEDs' relative intensities enabled contrast enhancement in biological tissue imaging. The LED light engine was also evaluated in a minimally invasive surgery (MIS) box trainer and in vivo during a porcine MIS procedure where it was used to generate 'narrowband' images. Future work using the violet LED could enable photodynamic diagnosis of bladder cancer.

Increasing the Brightness of Light Sources

OpenAIRE

Fu, Ling

2006-01-01

In modern illumination systems, compact size and high brightness are important features. Light recycling allows an increase of the spectral radiance (brightness) emitted by a light source for the price of reducing the total radiant power. Light recycling means returning part of the emitted light to the source where part of it will escape absorption. As a result, the output brightness can be increased in a restricted phase space, ...

Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns

Energy Technology Data Exchange (ETDEWEB)

Calleja, J.M.; Lazic, S.; Sanchez-Paramo, J. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Agullo-Rueda, F. [Materials Science Institute of Madrid, CSIC, 28049 Madrid (Spain); Cerutti, L.; Ristic, J.; Fernandez-Garrido, S.; Sanchez-Garcia, M.A.; Grandal, J.; Calleja, E. [ISOM and Departamento de Ingenieria Electronica, ETSIT, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Trampert, A.; Jahn, U. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2007-08-15

A review of inelastic light scattering measurements on group III-nitride nanocolumns grown by molecular beam epitaxy is presented. The nanocolumns are hexagonal, high quality single crystals with diameters in the range of 20 to 100 nm, with no traces of extended defects. GaN nanocolumns grown on bare Si substrates with both (111) and (100) orientation display narrow phonon peaks, indicating the absence of strain inhomogeneities. This opens the possibility of efficient integration of the nanocolumns as optoelectronic devices with the complementary metal oxide semiconductor technology. Measurements of the E{sub 2} phonon frequency on AlGaN nanocolumns indicate a linear dependence of the Al concentration on the Al relative flux, up to 60%. The E{sub 2} peak width increases with Al content due to phonon damping by alloy scattering. Inelastic light scattering measurements in InN nanocolumns display a coupled LO phonon-plasmon mode together with uncoupled phonons. The coupled mode is not observed in a reference compact sample. The origin of the coupled mode is attributed to spontaneous accumulation of electrons at the lateral surfaces of the nanocolumns. The presence of free electrons in the nanocolumns is confirmed by infrared reflectance measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns

International Nuclear Information System (INIS)

Calleja, J.M.; Lazic, S.; Sanchez-Paramo, J.; Agullo-Rueda, F.; Cerutti, L.; Ristic, J.; Fernandez-Garrido, S.; Sanchez-Garcia, M.A.; Grandal, J.; Calleja, E.; Trampert, A.; Jahn, U.

2007-01-01

A review of inelastic light scattering measurements on group III-nitride nanocolumns grown by molecular beam epitaxy is presented. The nanocolumns are hexagonal, high quality single crystals with diameters in the range of 20 to 100 nm, with no traces of extended defects. GaN nanocolumns grown on bare Si substrates with both (111) and (100) orientation display narrow phonon peaks, indicating the absence of strain inhomogeneities. This opens the possibility of efficient integration of the nanocolumns as optoelectronic devices with the complementary metal oxide semiconductor technology. Measurements of the E 2 phonon frequency on AlGaN nanocolumns indicate a linear dependence of the Al concentration on the Al relative flux, up to 60%. The E 2 peak width increases with Al content due to phonon damping by alloy scattering. Inelastic light scattering measurements in InN nanocolumns display a coupled LO phonon-plasmon mode together with uncoupled phonons. The coupled mode is not observed in a reference compact sample. The origin of the coupled mode is attributed to spontaneous accumulation of electrons at the lateral surfaces of the nanocolumns. The presence of free electrons in the nanocolumns is confirmed by infrared reflectance measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Demonstration of tunable microwave photonic notch filters using slow and fast light effects in semiconductor optical amplifiers

DEFF Research Database (Denmark)

Xue, Weiqi; Sales, Salvador; Mørk, Jesper

2009-01-01

We introduce a novel scheme based on slow and fast light effects in semiconductor optical amplifiers, to implement a microwave photonic notch filter with ~100% fractional tuning range at a microwave frequency of 30 GHz....

Method of making a self-aligned schottky metal semi-conductor field effect transistor with buried source and drain

International Nuclear Information System (INIS)

Bol, I.

1984-01-01

A semi-conductor structure and particularly a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source and drain areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried source and drain areas thereby providing effective vertical separation of the channel from the buried source and drain respectively. Accordingly, spatial separations between the self-aligned gate-to-drain, and gate-to-source can be relatively very closely controlled by varying the doping intensity and duration of the implantation thereby reducing the series resistance and increasing the operating speed

A semiclassical method in the theory of light scattering by semiconductor quantum dots

International Nuclear Information System (INIS)

Lang, I. G.; Korovin, L. I.; Pavlov, S. T.

2008-01-01

A semiclassical method is proposed for the theoretical description of elastic light scattering by arbitrary semiconductor quantum dots under conditions of size quantization. This method involves retarded potentials and allows one to dispense with boundary conditions for electric and magnetic fields. Exact results for the Umov-Poynting vector at large distances from quantum dots in the case of monochromatic and pulsed irradiation and formulas for differential scattering cross sections are obtained

Magnetic field effects in organic semiconductors : theory and simulations

NARCIS (Netherlands)

Kersten, S.P.

2013-01-01

Organic semiconductors are a promising class of materials, offering several advantages over inorganic semiconductors. They are light, flexible, easy and cheap to produce, and easily chemically tunable. Organic semiconductors are currently used for lighting applications and in the displays of some

Light scattering at the semiconductor-metal phase transition in vanadium dioxide

International Nuclear Information System (INIS)

Valiev, K.A.; Mokerov, V.G.; Sarajkin, V.V.; Petrova, A.G.

1977-01-01

The temperature dependence of optical properties has been investigated of vanadium dioxide thin monocrystals at the phase transition (PT) semiconductor-metal. It is established, that the anomaly arising herein is caused by the light scattering effect. As a result of the study of the scattered light intensity angle distribution and direct investigation of the samples the picture of optical heterogeneities responsible for the given scattering is determined into the polarization optical microscope. It is shown that these heterogeneities are due to the VO 2 two phases co-existence in the PT range and the light scattering effect is caused by the substantial difference of their optical constants, i.e. represents the so-called ''transition'' opalescence. At the PT investigation within the limits of the separate embrios of the new phase it has been found, that the PT temperature in various embrios is different. This is used to explain the PT temperature ''washing out'' in the investigated samples. It is supposed, that formation of the new phase is caused by the presence of elastic stress fields, arising close to the defects

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

Science.gov (United States)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

Backscatter absorption gas imaging systems and light sources therefore

Science.gov (United States)

Kulp, Thomas Jan [Livermore, CA; Kliner, Dahv A. V. [San Ramon, CA; Sommers, Ricky [Oakley, CA; Goers, Uta-Barbara [Campbell, NY; Armstrong, Karla M [Livermore, CA

2006-12-19

The location of gases that are not visible to the unaided human eye can be determined using tuned light sources that spectroscopically probe the gases and cameras that can provide images corresponding to the absorption of the gases. The present invention is a light source for a backscatter absorption gas imaging (BAGI) system, and a light source incorporating the light source, that can be used to remotely detect and produce images of "invisible" gases. The inventive light source has a light producing element, an optical amplifier, and an optical parametric oscillator to generate wavelength tunable light in the IR. By using a multi-mode light source and an amplifier that operates using 915 nm pump sources, the power consumption of the light source is reduced to a level that can be operated by batteries for long periods of time. In addition, the light source is tunable over the absorption bands of many hydrocarbons, making it useful for detecting hazardous gases.

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

Science.gov (United States)

Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

2015-12-23

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

Purcell effect in an organic-inorganic halide perovskite semiconductor microcavity system

International Nuclear Information System (INIS)

Wang, Jun; Wang, Yafeng; Hu, Tao; Wu, Lin; Shen, Xuechu; Chen, Zhanghai; Cao, Runan; Xu, Fei; Da, Peimei; Zheng, Gengfeng; Lu, Jian

2016-01-01

Organic-inorganic halide perovskite semiconductors with the attractive physics properties, including strong photoluminescence (PL), huge oscillator strengths, and low nonradiative recombination losses, are ideal candidates for studying the light-matter interaction in nanostructures. Here, we demonstrate the coupling of the exciton state and the cavity mode in the lead halide perovskite microcavity system at room temperature. The Purcell effect in the coupling system is clearly observed by using angle-resolved photoluminescence spectra. Kinetic analysis based on time-resolved PL reveals that the spontaneous emission rate of the halide perovskite semiconductor is significantly enhanced at resonance of the exciton energy and the cavity mode. Our results provide the way for developing electrically driven organic polariton lasers, optical devices, and on-chip coherent quantum light sources

The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.

Science.gov (United States)

Xiao, Z; Camino, F E

2009-04-01

Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

LED intense headband light source for fingerprint analysis

Science.gov (United States)

Villa-Aleman, Eliel

2005-03-08

A portable, lightweight and high-intensity light source for detecting and analyzing fingerprints during field investigation. On-site field analysis requires long hours of mobile analysis. In one embodiment, the present invention comprises a plurality of light emitting diodes; a power source; and a personal attachment means; wherein the light emitting diodes are powered by the power source, and wherein the power source and the light emitting diodes are attached to the personal attachment means to produce a personal light source for on-site analysis of latent fingerprints. The present invention is available for other applications as well.

Synchrotron light sources in developing countries

Science.gov (United States)

Mtingwa, Sekazi K.; Winick, Herman

2018-03-01

We discuss the role that synchrotron light sources, such as SESAME, could play in improving the socioeconomic conditions in developing countries. After providing a brief description of a synchrotron light source, we discuss the important role that they played in the development of several economically emerging countries. Then we describe the state of synchrotron science in South Africa and that country’s leadership role in founding the African Light Source initiative. Next, we highlight a new initiative called Lightsources for Africa, the Americas & Middle East Project, which is a global initiative led by the International Union of Pure and Applied Physics and the International Union of Crystallography, with initial funding provided by the International Council for Science. Finally, we comment on a new technology called the multibend achromat that has launched a new paradigm for the design of synchrotron light sources that should be attractive for construction in developing countries.

Microwave phase shifter with controllable power response based on slow- and fast-light effects in semiconductor optical amplifiers.

Science.gov (United States)

Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

2009-04-01

We suggest and experimentally demonstrate a method for increasing the tunable rf phase shift of semiconductor waveguides while at the same time enabling control of the rf power. This method is based on the use of slow- and fast-light effects in a cascade of semiconductor optical amplifiers combined with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of approximately 240 degrees at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique is scalable to more amplifiers and should allow realization of an rf phase shift of 360 degrees.

Plant Growth Absorption Spectrum Mimicking Light Sources

Directory of Open Access Journals (Sweden)

Jwo-Huei Jou

2015-08-01

Full Text Available Plant factories have attracted increasing attention because they can produce fresh fruits and vegetables free from pesticides in all weather. However, the emission spectra from current light sources significantly mismatch the spectra absorbed by plants. We demonstrate a concept of using multiple broad-band as well as narrow-band solid-state lighting technologies to design plant-growth light sources. Take an organic light-emitting diode (OLED, for example; the resulting light source shows an 84% resemblance with the photosynthetic action spectrum as a twin-peak blue dye and a diffused mono-peak red dye are employed. This OLED can also show a greater than 90% resemblance as an additional deeper red emitter is added. For a typical LED, the resemblance can be improved to 91% if two additional blue and red LEDs are incorporated. The approach may facilitate either an ideal use of the energy applied for plant growth and/or the design of better light sources for growing different plants.

Detection of the scintillation light emitted from direct-bandgap compound semiconductors by a Si avalanche photodiode at 150 mK

International Nuclear Information System (INIS)

Yasumune, Takashi; Takayama, Nobuyasu; Maehata, Keisuke; Ishibashi, Kenji; Umeno, Takahiro

2008-01-01

In this work, the direct-bandgap compound semiconductor materials are irradiated by α particles emitted from 241 Am for the detection of scintillation light at the temperature of 150 mK. For the irradiation experiment, two disk shaped samples were fabricated from an epoxy resin mixed with the powder of PbI 2 and CuI, respectively. Each disk-samples was cooled down to 150 mK by a compact liquid helium-free dilution refrigerator. A Si avalanche photodiode (APD) was employed for detecting the scintillation light emitted from the disk-sample inside the refrigerator. The detection signal current of Si APD was converted into the voltage pulses by a charge sensitive preamplifier. The voltage pulses of the scintillation light emitted from the direct-bandgap semiconductors were observed at the temperature of 150 mK. (author)

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

Science.gov (United States)

Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

2013-06-21

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

CENTRAL WAVELENGTH ADJUSTMENT OF LIGHT EMITTING SOURCE IN INTERFEROMETRIC SENSORS BASED ON FIBER-OPTIC BRAGG GRATINGS

Directory of Open Access Journals (Sweden)

A. S. Aleynik

2015-09-01

Full Text Available The paper is focused on the investigation of fiber-optic interferometric sensor based on the array of fiber Bragg gratings. Reflection spectra displacement mechanism of the fiber Bragg gratings under the external temperature effects and the static pressure is described. The experiment has shown that reflection spectra displacement of Bragg gratings reduces the visibility of the interference pattern. A method of center wavelength adjustment is proposed for the optical radiation source in accord ance with the current Bragg gratings reflection spectra based on the impulse relative modulation of control signal for the Peltier element controller. The semiconductor vertical-cavity surface-emitting laser controlled by a pump driver is used as a light source. The method is implemented by the Peltier element controller regulating and stabilizing the light source temperature, and a programmable logic-integrated circuit monitoring the Peltier element controller. The experiment has proved that the proposed method rendered possible to regulate the light source temperature at a pitch of 0.05 K and adjust the optical radiation source center wavelength at a pitch of 0.05 nm. Experimental results have revealed that the central wavelength of the radiation adjustment at a pitch of 0.005 nm gives the possibility for the capacity of the array consisting of four opticalfiber sensors based on the fiber Bragg gratings. They are formed in one optical fiber under the Bragg grating temperature change from 0° C to 300° C and by the optical fiber mechanical stretching by the force up to 2 N.

High-luminosity blue and blue-green gallium nitride light-emitting diodes.

Science.gov (United States)

Morkoç, H; Mohammad, S N

1995-01-06

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

Slow light in a semiconductor waveguide for true-time delay applications in microwave photonics

DEFF Research Database (Denmark)

Öhman, Filip; Yvind, Kresten; Mørk, Jesper

2007-01-01

We have investigated the slowand fast light properties of a semiconductor waveguide device employing concatenated gain and absorber sections. This letter presents the experimental results as well as theoretical modeling. A large phase shift of 110 and a true-time delay of more than 150 ps are dem...... are demonstrated. The combination of amplitude and phase control of the modulated signal shows great promise for applications within microwave photonics....

Handbook of luminescent semiconductor materials

CERN Document Server

Bergman, Leah

2011-01-01

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

Ideas for future synchrotron light sources

International Nuclear Information System (INIS)

Jackson, A.; Hassenzahl, W.; Meddahi, M.

1992-03-01

Synchrotron light sources have advanced in the past two-to-three decades through three ''generations,'' from irritating parasitic sources on high-energy physics accelerators to dedicated electron and position storage rings of unprecedented low emittance, utilizing undulator and wiggler magnets. The evolution through these three generations followed a predicable, science-driven, course towards brighter beams of VUV- and x-radiation. The requirements of future light sources is not so clear. The limit on how emittance has certainly not been reached, and diffraction-limited sources at shorter wavelengths would be the natural progression from previous generations. However, scientists are now looking at other radiation characteristics that might better serve their needs, for example, more coherent power, fast switching polarization, ultra-short (sub-picosecond) time structure, and synchronized beams for pump-probe experiments. This paper discusses some current ideas that might drive the fourth-generation synchrotron light source

Internal heat gain from different light sources in the building lighting systems

Directory of Open Access Journals (Sweden)

Suszanowicz Dariusz

2017-01-01

Full Text Available EU directives and the Construction Law have for some time required investors to report the energy consumption of buildings, and this has indeed caused low energy consumption buildings to proliferate. Of particular interest, internal heat gains from installed lighting affect the final energy consumption for heating of both public and residential buildings. This article presents the results of analyses of the electricity consumption and the luminous flux and the heat flux emitted by different types of light sources used in buildings. Incandescent light, halogen, compact fluorescent bulbs, and LED bulbs from various manufacturers were individually placed in a closed and isolated chamber, and the parameters for their functioning under identical conditions were recorded. The heat flux emitted by 1 W nominal power of each light source was determined. Based on the study results, the empirical coefficients of heat emission and energy efficiency ratios for different types of lighting sources (dependent lamp power and the light output were designated. In the heat balance of the building, the designated rates allow for precise determination of the internal heat gains coming from lighting systems using various light sources and also enable optimization of lighting systems of buildings that are used in different ways.

Internal heat gain from different light sources in the building lighting systems

Science.gov (United States)

Suszanowicz, Dariusz

2017-10-01

EU directives and the Construction Law have for some time required investors to report the energy consumption of buildings, and this has indeed caused low energy consumption buildings to proliferate. Of particular interest, internal heat gains from installed lighting affect the final energy consumption for heating of both public and residential buildings. This article presents the results of analyses of the electricity consumption and the luminous flux and the heat flux emitted by different types of light sources used in buildings. Incandescent light, halogen, compact fluorescent bulbs, and LED bulbs from various manufacturers were individually placed in a closed and isolated chamber, and the parameters for their functioning under identical conditions were recorded. The heat flux emitted by 1 W nominal power of each light source was determined. Based on the study results, the empirical coefficients of heat emission and energy efficiency ratios for different types of lighting sources (dependent lamp power and the light output) were designated. In the heat balance of the building, the designated rates allow for precise determination of the internal heat gains coming from lighting systems using various light sources and also enable optimization of lighting systems of buildings that are used in different ways.

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet.

Science.gov (United States)

Warren, Joshua A; Riddle, Matthew E; Graziano, Diane J; Das, Sujit; Upadhyayula, Venkata K K; Masanet, Eric; Cresko, Joe

2015-09-01

Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015-2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2-20 billion GJ depending on market adoption dynamics.

White organic light-emitting devices incorporating nanoparticles of II-VI semiconductors

International Nuclear Information System (INIS)

Ahn, Jin H; Bertoni, Cristina; Dunn, Steve; Wang, Changsheng; Talapin, Dmitri V; Gaponik, Nikolai; Eychmueller, Alexander; Hua Yulin; Bryce, Martin R; Petty, Michael C

2007-01-01

A blue-green fluorescent organic dye and red-emitting nanoparticles, based on II-VI semiconductors, have been used together in the fabrication of white organic light-emitting devices. In this work, the materials were combined in two different ways: in the form of a blend, and as separate layers deposited on the opposite sides of the substrate. The blended-layer structure provided purer white emission. However, this device also exhibited a number of disadvantages, namely a high drive voltage, a low efficiency and some colour instability. These problems could be avoided by using a device structure that was fabricated using separate dye and nanoparticle layers

High-Energy Compton Scattering Light Sources

CERN Document Server

Hartemann, Fred V; Barty, C; Crane, John; Gibson, David J; Hartouni, E P; Tremaine, Aaron M

2005-01-01

No monochromatic, high-brightness, tunable light sources currently exist above 100 keV. Important applications that would benefit from such new hard x-ray sources include: nuclear resonance fluorescence spectroscopy, time-resolved positron annihilation spectroscopy, and MeV flash radiography. The peak brightness of Compton scattering light sources is derived for head-on collisions and found to scale with the electron beam brightness and the drive laser pulse energy. This gamma 2

All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

DEFF Research Database (Denmark)

Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

2010-01-01

Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

Tunable radiation emitting semiconductor device

NARCIS (Netherlands)

2009-01-01

A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

Collimating lens for light-emitting-diode light source based on non-imaging optics.

Science.gov (United States)

Wang, Guangzhen; Wang, Lili; Li, Fuli; Zhang, Gongjian

2012-04-10

A collimating lens for a light-emitting-diode (LED) light source is an essential device widely used in lighting engineering. Lens surfaces are calculated by geometrical optics and nonimaging optics. This design progress does not rely on any software optimization and any complex iterative process. This method can be used for any type of light source not only Lambertian. The theoretical model is based on point source. But the practical LED source has a certain size. So in the simulation, an LED chip whose size is 1 mm*1 mm is used to verify the feasibility of the model. The mean results show that the lenses have a very compact structure and good collimating performance. Efficiency is defined as the ratio of the flux in the illuminated plane to the flux from LED source without considering the lens material transmission. Just investigating the loss in the designed lens surfaces, the two types of lenses have high efficiencies of more than 90% and 99%, respectively. Most lighting area (possessing 80% flux) radii are no more than 5 m when the illuminated plane is 200 m away from the light source.

Quantum optics with semiconductor nanostructures

CERN Document Server

Jahnke, Frank

2012-01-01

A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

X-ray microscopy: An emerging technique for semiconductor microstructure characterization

International Nuclear Information System (INIS)

Padmore, H.A.

1998-05-01

The advent of third generation synchrotron radiation x-ray sources, such as the Advanced Light Source (ALS) at Berkeley have enabled the practical realization of a wide range of new techniques in which mature chemical or structural probes such as x-ray photoelectron spectroscopy (XPS) and x-ray diffraction are used in conjunction with microfocused x-ray beams. In this paper the characteristics of some of these new microscopes are described, particularly in reference to their applicability to the characterization of semiconductor microstructures

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

Science.gov (United States)

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Physics Challenges for ERL Light Sources

Energy Technology Data Exchange (ETDEWEB)

Lia Merminga

2004-07-01

We present an overview of the physics challenges encountered in the design and operation of Energy Recovering Linac (ERL) based light sources. These challenges include the generation and preservation of low emittance, high-average current beams, manipulating and preserving the transverse and longitudinal phase space, control of the multipass beam breakup instability, efficient extraction of higher order mode power and RF control and stability of the superconducting cavities. These key R&D issues drive the design and technology choices for proposed ERL light sources. Simulations and calculations of these processes will be presented and compared with experimental data obtained at the Jefferson Lab FEL Upgrade, a 10 mA ERL light source presently in commissioning, and during a 1 GeV demonstration of energy recovery at CEBAF.

BERKELEY: Light Source anniversary

International Nuclear Information System (INIS)

Anon.

1994-01-01

The staff of the Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory has been too busy to celebrate the first anniversary of the facility's transition from a US Department of Energy construction project to operating third-generation synchrotron radiation source. Based on a 1.5-GeV, low-emittance electron storage ring that accommodates up to ten insertion-device radiation sources optimized primarily for the soft X-ray and vacuum ultra-violet regions of the spectrum, the ALS has completed

BERKELEY: Light Source anniversary

Energy Technology Data Exchange (ETDEWEB)

Anon.

1994-10-15

The staff of the Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory has been too busy to celebrate the first anniversary of the facility's transition from a US Department of Energy construction project to operating third-generation synchrotron radiation source. Based on a 1.5-GeV, low-emittance electron storage ring that accommodates up to ten insertion-device radiation sources optimized primarily for the soft X-ray and vacuum ultra-violet regions of the spectrum, the ALS has completed.

The synchrotron light source as a tool for microtechnology

CERN Document Server

Harvey, E C

2002-01-01

We are all familiar with lathes and milling machines for shaping parts in machine shops and factories. But what if the parts we need to make are significantly smaller than a millimetre, and featuring details even smaller? Semiconductor chip manufacturers have faced these problems and have learnt to use new ways to make devices. No longer are transistors made one at a time, but rather are 'printed' millions at a time, together with their interconnection wiring in a process called photolithography. Light from an excimer laser is directed through masks that incorporate the patterns required and photoexposes surfaces positioned behind the masks. This form of photolithography is today a standard process in semiconductor FAB plants and has several critical advantages in terms of cost, reproducibility, reliability and its ability to scale towards ever smaller and more complex systems

Photon Science at Modern Light Sources

Science.gov (United States)

Arthur, John

2009-12-01

More than 50 large x-ray and UV light sources based on high-energy electron accelerators are in operation around the world, serving a scientific community numbering in the tens of thousands. These sources generate synchrotron radiation from accelerated electrons or positrons. The development of synchrotron light sources over the last 40 years has fueled an exponential increase in x-ray source brightness of more than 10 orders of magnitude. The next large advance in source potential is now underway, with the commissioning of the first x-ray Free-Electron Laser (FEL) sources. Using high-energy electron linear accelerators, these facilities produce sub-picosecond pulses of hard x-rays with peak brightness more than 10 orders of magnitude greater than current synchrotron facilities. FEL x-ray facilities will soon be operational in the US, Japan, and Germany. Research at modern light sources makes use of a wide range of experimental techniques. Many experiments are designed to study the structure of matter at the atomic scale using elastic x-ray scattering. This technique has been particularly effective for determining the structures of biological molecules, such as proteins, viruses, and drugs. Inelastic x-ray scattering, or x-ray absorption followed by emission of electrons or photons, can give information about the electronic structures of atoms, which can be used to deduce local environment information such as atomic species, bonding state, geometry of neighboring atoms, or magnetic state. For some techniques involving x-ray emission from a sample, cryogenic detectors with energy resolution at the ˜10 eV level or better would be very helpful. Shifts in electron energy levels associated with bonding states and magnetic states are typically several eV, while the energy structure associated with Compton inelastic scattering is typically in the range of a few tens of eV. Current energy-resolving detectors used at synchrotron light sources are hampered by either poor

National Synchrotron Light Source

International Nuclear Information System (INIS)

Hulbert, S.L.; Lazarz, N.M.

1991-04-01

This report discussion research being conducted at the National Synchrotron light source. In particular, this report contains operations summaries; symposia, workshops, and projects; NSLS highlights; and abstracts of science at the NSLS

Irradiation Pattern Analysis for Designing Light Sources-Based on Light Emitting Diodes

International Nuclear Information System (INIS)

Rojas, E.; Stolik, S.; La Rosa, J. de; Valor, A.

2016-01-01

Nowadays it is possible to design light sources with a specific irradiation pattern for many applications. Light Emitting Diodes present features like high luminous efficiency, durability, reliability, flexibility, among others as the result of its rapid development. In this paper the analysis of the irradiation pattern of the light emitting diodes is presented. The approximation of these irradiation patterns to both, a Lambertian, as well as a Gaussian functions for the design of light sources is proposed. Finally, the obtained results and the functionality of bringing the irradiation pattern of the light emitting diodes to these functions are discussed. (Author)

The 4th Generation Light Source at Jefferson Lab

International Nuclear Information System (INIS)

Stephen Benson; George Biallas; James Boyce; Donald Bullard; James Coleman; David Douglas; H. Dylla; Richard Evans; Pavel Evtushenko; Albert Grippo; Christopher Gould; Joseph Gubeli; David Hardy; Carlos Hernandez-Garcia; Kevin Jordan; John Klopf; Steven Moore; George Neil; Thomas Powers; Joseph Preble; Daniel Sexton; Michelle Shinn; Christopher Tennant; Richard Walker; Shukui Zhang; Gwyn Williams

2007-01-01

A number of 'Grand Challenges' in Science have recently been identified in reports from The National Academy of Sciences, and the U.S. Dept. of Energy, Basic Energy Sciences. Many of these require a new generation of linac-based light source to study dynamical and non-linear phenomena in nanoscale samples. In this paper we present a summary of the properties of such light sources, comparing them with existing sources, and then describing in more detail a specific source at Jefferson Lab. Importantly, the JLab light source has developed some novel technology which is a critical enabler for other new light sources

Electrically-driven GHz range ultrafast graphene light emitter (Conference Presentation)

Science.gov (United States)

Kim, Youngduck; Gao, Yuanda; Shiue, Ren-Jye; Wang, Lei; Aslan, Ozgur Burak; Kim, Hyungsik; Nemilentsau, Andrei M.; Low, Tony; Taniguchi, Takashi; Watanabe, Kenji; Bae, Myung-Ho; Heinz, Tony F.; Englund, Dirk R.; Hone, James

2017-02-01

Ultrafast electrically driven light emitter is a critical component in the development of the high bandwidth free-space and on-chip optical communications. Traditional semiconductor based light sources for integration to photonic platform have therefore been heavily studied over the past decades. However, there are still challenges such as absence of monolithic on-chip light sources with high bandwidth density, large-scale integration, low-cost, small foot print, and complementary metal-oxide-semiconductor (CMOS) technology compatibility. Here, we demonstrate the first electrically driven ultrafast graphene light emitter that operate up to 10 GHz bandwidth and broadband range (400 1600 nm), which are possible due to the strong coupling of charge carriers in graphene and surface optical phonons in hBN allow the ultrafast energy and heat transfer. In addition, incorporation of atomically thin hexagonal boron nitride (hBN) encapsulation layers enable the stable and practical high performance even under the ambient condition. Therefore, electrically driven ultrafast graphene light emitters paves the way towards the realization of ultrahigh bandwidth density photonic integrated circuits and efficient optical communications networks.

Miniature radioactive light source

International Nuclear Information System (INIS)

Caffarella, T.E.; Radda, G.J.; Dooley, H.H.

1980-01-01

A miniature radioactive light source for illuminating digital watches is described consisting of a glass tube with improved laser sealing and strength containing tritium gas and a transducer responsive to the gas. (U.K.)

PREFACE: Diagnostics for electrical discharge light sources: pushing the limits Diagnostics for electrical discharge light sources: pushing the limits

Science.gov (United States)

Zissis, Georges; Haverlag, Marco

2010-06-01

Light sources play an indispensable role in the daily life of any human being. Quality of life, health and urban security related to traffic and crime prevention depend on light and on its quality. In fact, every day approximately 30 billion electric light sources operate worldwide. These electric light sources consume almost 19% of worldwide electricity production. Finding new ways to light lamps is a challenge where the stakes are scientific, technological, economic and environmental. The production of more efficient light sources is a sustainable solution for humanity. There are many opportunities for not only enhancing the efficiency and reliability of lighting systems but also for improving the quality of light as seen by the end user. This is possible through intelligent use of new technologies, deep scientific understanding of the operating principles of light sources and knowledge of the varied human requirements for different types of lighting in different settings. A revolution in the domain of light source technology is on the way: high brightness light emitting diodes arriving in the general lighting market, together with organic LEDs (OLEDs), are producing spectacular advances. However, unlike incandescence, electrical discharge lamps are far from disappearing from the market. In addition, new generations of discharge lamps based on molecular radiators are becoming a reality. There are still many scientific and technological challenges to be raised in this direction. Diagnostics are important for understanding the fundamental mechanisms taking place in the discharge plasma. This understanding is an absolute necessity for system optimization leading to more efficient and high quality light sources. The studied medium is rather complex, but new diagnostic techniques coupled to innovative ideas and powerful tools have been developed in recent years. This cluster issue of seven papers illustrates these efforts. The selected papers cover all domains, from

Light and Light Sources High-Intensity Discharge Lamps

CERN Document Server

Flesch, Peter G

2006-01-01

Light and Light Sources gives an introduction to the working principles of high-intensity discharge (HID) lamps and points out challenges and problems associated with the development and operation of HID lamps. The state-of-the-art in electrode and plasma diagnostics as well as numerical methods used for the understanding of HID lamps are described. This volume addresses students as well as scientists and researchers at universities and in industry.

Organic semiconductor crystals.

Science.gov (United States)

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Laser driven white light source for BRDF measurement

DEFF Research Database (Denmark)

Amdemeskel, Mekbib Wubishet; Thorseth, Anders; Dam-Hansen, Carsten

2017-01-01

In this paper, we will present a setup with laser driven light source (LDLS) for measuring a 2D bidirectional reflectance distribution function (BRDF). We have carried out measurements to acquire the BRDF of different samples based on our setup: which consists of a new laser driven broadband light...... source (UV-VIS-NIR), spectroradiometer and sample holder stepper motor in a dark UV-protected environment. Here, we introduced a special kind of light source which has a bright, stable, broad spectral range and well collimated light output to give a very good angular resolution. The experimental results...

Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

International Nuclear Information System (INIS)

Wu, F.; Dawei, Z.; Shuzhen, S.; Yiming, Z.; Songlin, Z.; Jian, X.

2012-01-01

We have investigated the feasibility of employing quantum dot (QD) phosphor-based light-emitting diodes (LEDs) in aviation applications that request Night Vision Imaging Systems (NVIS) compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nano crystal QDs can be tailored by varying the nano crystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

Fiber optical laser spot microscope: A new concept for photoelectrochemical characterization of semiconductor electrodes

OpenAIRE

Carlsson, Per; Holmström, Bertil; Uosaki, Kohei; Kita, Hideaki

1988-01-01

A fiber optical laser spot microscope, which allows the simultaneous measurements of photocurrent and reflected light intensity or the measurement of laser spot photocurrent under the illumination of other light sources, has been developed to study semiconductor/electrolyte interfaces. The capability of this microscope was demonstrated on as-cleaved and Pt-treated p-InSe. The Pt treatment increased the photocurrent and improved the lateral resolution due to the increase of surface reaction ra...

Influence of phonons on semiconductor quantum emission

Energy Technology Data Exchange (ETDEWEB)

Feldtmann, Thomas

2009-07-06

A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

The Advanced Light Source

International Nuclear Information System (INIS)

Jackson, A.

1991-05-01

The Advanced Light Source (ALS), a national user facility currently under construction at the Lawrence Berkeley Laboratory (LBL), is a third-generation synchrotron light source designed to produce extremely bright beams of synchrotron radiation in the energy range from a few eV to 10 keV. The design is based on a 1--1.9-GeV electron storage ring (optimized at 1.5 GeV), and utilizes special magnets, known as undulators and wigglers (collectively referred to as insertion devices), to generate the radiation. The facility is scheduled to begin operating in April 1993. In this paper we describe the progress in the design, construction, and commissioning of the accelerator systems, insertion devices, and beamlines. Companion presentations at this conference give more detail of specific components in the ALS, and describe the activities towards establishing an exciting user program. 3 figs., 2 tabs

Facile synthesis of light harvesting semiconductor bismuth oxychloride nano photo-catalysts for efficient removal of hazardous organic pollutants.

Directory of Open Access Journals (Sweden)

Zaki S Seddigi

Full Text Available In the present work, bismuth oxychloride nanoparticles-a light harvesting semiconductor photocatalyst-were synthesized by a facile hydrolysis route, with sodium bismuthate and hydroxylammonium chloride as the precursor materials. The as-synthesized semiconductor photocatalysts were characterized using X-ray diffraction analysis, Fourier transform infra-red spectroscopy, Raman spectroscopy, Field emission scanning electron microscopy, X-ray photoelectron spectroscopy and Photoluminescence spectroscopy techniques. The crystal structure, morphology, composition, and optical properties of these facile synthesized bismuth oxychloride nanoparticles (BiOCl NPs were compared to those of traditional bismuth oxychloride. In addition, the photocatalytic performance of facile-synthesized BiOCl NPs and traditional BiOCl, as applied to the removal of hazardous organic dyes under visible light illumination, is thoroughly investigated. Our results reveal that facile-synthesized BiOCl NPs display strong UV-Vis light adsorption, improved charge carrier mobility and an inhibited rate of charge carrier recombination, when compared to traditional BiOCl. These enhancements result in an improved photocatalytic degradation rate of hazardous organic dyes under UV-Vis irradiance. For instance, the facile-synthesized BiOCl NPs attained 100% degradation of methylene blue and methyl orange dyes in approximately 30 mins under UV-Vis irradiation, against 55% degradation for traditional BiOCl under similar experimental conditions.

Facile synthesis of light harvesting semiconductor bismuth oxychloride nano photo-catalysts for efficient removal of hazardous organic pollutants.

Science.gov (United States)

Seddigi, Zaki S; Gondal, Mohammed A; Baig, Umair; Ahmed, Saleh A; Abdulaziz, M A; Danish, Ekram Y; Khaled, Mazen M; Lais, Abul

2017-01-01

In the present work, bismuth oxychloride nanoparticles-a light harvesting semiconductor photocatalyst-were synthesized by a facile hydrolysis route, with sodium bismuthate and hydroxylammonium chloride as the precursor materials. The as-synthesized semiconductor photocatalysts were characterized using X-ray diffraction analysis, Fourier transform infra-red spectroscopy, Raman spectroscopy, Field emission scanning electron microscopy, X-ray photoelectron spectroscopy and Photoluminescence spectroscopy techniques. The crystal structure, morphology, composition, and optical properties of these facile synthesized bismuth oxychloride nanoparticles (BiOCl NPs) were compared to those of traditional bismuth oxychloride. In addition, the photocatalytic performance of facile-synthesized BiOCl NPs and traditional BiOCl, as applied to the removal of hazardous organic dyes under visible light illumination, is thoroughly investigated. Our results reveal that facile-synthesized BiOCl NPs display strong UV-Vis light adsorption, improved charge carrier mobility and an inhibited rate of charge carrier recombination, when compared to traditional BiOCl. These enhancements result in an improved photocatalytic degradation rate of hazardous organic dyes under UV-Vis irradiance. For instance, the facile-synthesized BiOCl NPs attained 100% degradation of methylene blue and methyl orange dyes in approximately 30 mins under UV-Vis irradiation, against 55% degradation for traditional BiOCl under similar experimental conditions.

Spectral matching research for light-emitting diode-based neonatal jaundice therapeutic device light source

Science.gov (United States)

Gan, Ruting; Guo, Zhenning; Lin, Jieben

2015-09-01

To decrease the risk of bilirubin encephalopathy and minimize the need for exchange transfusions, we report a novel design for light source of light-emitting diode (LED)-based neonatal jaundice therapeutic device (NJTD). The bilirubin absorption spectrum in vivo was regarded as target. Based on spectral constructing theory, we used commercially available LEDs with different peak wavelengths and full width at half maximum as matching light sources. Simple genetic algorithm was first proposed as the spectral matching method. The required LEDs number at each peak wavelength was calculated, and then, the commercial light source sample model of the device was fabricated to confirm the spectral matching technology. In addition, the corresponding spectrum was measured and the effect was analyzed finally. The results showed that fitted spectrum was very similar to the target spectrum with 98.86 % matching degree, and the actual device model has a spectrum close to the target with 96.02 % matching degree. With higher fitting degree and efficiency, this matching algorithm is very suitable for light source matching technology of LED-based spectral distribution, and bilirubin absorption spectrum in vivo will be auspicious candidate for the target spectrum of new LED-based NJTD light source.

High mobility emissive organic semiconductor

Science.gov (United States)

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Tunable light source for fiber optic lighting applications

Science.gov (United States)

Narendran, Nadarajah; Bierman, Andrew; Finney, Mark J.; Edwards, Ian K.

1997-09-01

This paper examines the possibility of tuning the lamp spectrum to compensate for color distortions in fiber optic lighting systems. Because most optical fibers have strong absorption in the blue and red wavelength regions, white light entering and propagating down an optical fiber suffers varied amounts of attenuation as a function of wavelength. As a result, the light exiting the optical fiber has a greenish tint that the lighting design community considers undesirable in interior lighting applications. HID lamps are commonly used for the light source in this industry. Certain classes of HID lamps tend to shift in color when their operating position or the input voltage to the lamp is changed. An experimental study is being conducted to characterize the color shift properties of a small HID lamp as a function of tilt and input voltage. The study also examines the possibility of exploiting this color shift to compensate for the color distortions caused by optical fibers. The details of the experiment and the results are presented in this manuscript.

Coherent diffractive imaging methods for semiconductor manufacturing

Science.gov (United States)

Helfenstein, Patrick; Mochi, Iacopo; Rajeev, Rajendran; Fernandez, Sara; Ekinci, Yasin

2017-12-01

The paradigm shift of the semiconductor industry moving from deep ultraviolet to extreme ultraviolet lithography (EUVL) brought about new challenges in the fabrication of illumination and projection optics, which constitute one of the core sources of cost of ownership for many of the metrology tools needed in the lithography process. For this reason, lensless imaging techniques based on coherent diffractive imaging started to raise interest in the EUVL community. This paper presents an overview of currently on-going research endeavors that use a number of methods based on lensless imaging with coherent light.

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Enhanced thermaly managed packaging for III-nitride light emitters

Science.gov (United States)

Kudsieh, Nicolas

In this Dissertation our work on `enhanced thermally managed packaging of high power semiconductor light sources for solid state lighting (SSL)' is presented. The motivation of this research and development is to design thermally high stable cost-efficient packaging of single and multi-chip arrays of III-nitrides wide bandgap semiconductor light sources through mathematical modeling and simulations. Major issues linked with this technology are device overheating which causes serious degradation in their illumination intensity and decrease in the lifetime. In the introduction the basics of III-nitrides WBG semiconductor light emitters are presented along with necessary thermal management of high power cingulated and multi-chip LEDs and laser diodes. This work starts at chip level followed by its extension to fully packaged lighting modules and devices. Different III-nitride structures of multi-quantum well InGaN/GaN and AlGaN/GaN based LEDs and LDs were analyzed using advanced modeling and simulation for different packaging designs and high thermal conductivity materials. Study started with basic surface mounted devices using conventional packaging strategies and was concluded with the latest thermal management of chip-on-plate (COP) method. Newly discovered high thermal conductivity materials have also been incorporated for this work. Our study also presents the new approach of 2D heat spreaders using such materials for SSL and micro LED array packaging. Most of the work has been presented in international conferences proceedings and peer review journals. Some of the latest work has also been submitted to well reputed international journals which are currently been reviewed for publication. .

National Synchrotron Light Source

International Nuclear Information System (INIS)

van Steenbergen, A.

1979-01-01

The National Synchrotron Light Source comprises two high intensity electron storage rings for the generation of intense fluxes of synchrotron radiation in the vuv wavelength domain (700 MeV e - ring) and in the x-ray wavelength domain (2.5 GeV e - ring). A description is presented of the basic facility and the characteristics of the synchrotron radiation sources. The present plans for specific beam lines will be enumerated and the planned use of beam wigglers and undulators will be discussed

Hyperentangled photon sources in semiconductor waveguides

DEFF Research Database (Denmark)

Kang, Dongpeng; Helt, L. G.; Zhukovsky, Sergei

2014-01-01

We propose and analyze the performance of a technique to generate mode and polarization hyperentangled photons in monolithic semiconductor waveguides using two concurrent type-II spontaneous parametric down-conversion (SPDC) processes. These two SPDC processes are achieved by waveguide engineering...

Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function.

Science.gov (United States)

Lee, Thomas T; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P; Smith, Stephen J; Shenoy, Krishna V; Harris, James S

2006-01-01

Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

Advanced Light Source

International Nuclear Information System (INIS)

Sah, R.C.

1983-03-01

The Advanced Light Source (ALS) is a new synchrotron radiation source which has been proposed by Lawrence Berkeley Laboratory. The ALS will be a key component in a major new research facility, the National Center for Advanced Materials. The ALS will consist of an electron linear accelerator, a booster synchrotron, a 1.3-GeV electron storage ring, and a number of photon beam lines. Most or all photon beam lines will originate from wiggler and undulator magnets placed in the 12 long straight sections of the ALS. A very low electron beam emittance will provide photon beams of unsurpassed spectral brilliance from specially-designed undulators, and a high radiofrequency will produce very short pulse lengths

Calibration of Ge(Li) semiconductor detector by method using agar volume source

International Nuclear Information System (INIS)

Yanase, Nobuyuki; Kasai, Atsushi

1979-12-01

The Ge(Li) semiconductor detector was calibrated for measurements of environmental samples. The radioisotopes used for standard sources are 22 Na, 51 Cr, 56 Co, 57 Co, 133 Ba, 137 Cs, 144 Ce and 241 Am. These are mixed with hot agar aqueous solution and fixed uniformly in a cylindrical plastic case in cooling. The agar volume source is advantageous in handling over the fluid aqueous source. The prepared cylindrical standard sources are in diameters 6 and 8 cm and thicknesses 1, 5, 10, 20, 30 and 40 mm (only for 8 cm diameter). The radioactivities of prepared standard sources are between 0.03 μCi and 0.2 μCi. It takes only a week to make the calibration except data processing. The obtained full energy peak efficiency curves include 5 - 10% error due to preparation of agar source, reference radioactivity data of purchased standard solutions, reference data of branching ratio of gamma-ray and sum effect. The efficiency curves, however, are sufficient for quantitative analysis of environmental samples. (author)

A two-metric proposal to specify the color-rendering properties of light sources for retail lighting

Science.gov (United States)

Freyssinier, Jean Paul; Rea, Mark

2010-08-01

Lighting plays an important role in supporting retail operations, from attracting customers, to enabling the evaluation of merchandise, to facilitating the completion of the sale. Lighting also contributes to the identity, comfort, and visual quality of a retail store. With the increasing availability and quality of white LEDs, retail lighting specifiers are now considering LED lighting in stores. The color rendering of light sources is a key factor in supporting retail lighting goals and thus influences a light source's acceptance by users and specifiers. However, there is limited information on what consumers' color preferences are, and metrics used to describe the color properties of light sources often are equivocal and fail to predict preference. The color rendering of light sources is described in the industry solely by the color rendering index (CRI), which is only indirectly related to human perception. CRI is intended to characterize the appearance of objects illuminated by the source and is increasingly being challenged because new sources are being developed with increasingly exotic spectral power distributions. This paper discusses how CRI might be augmented to better use it in support of the design objectives for retail merchandising. The proposed guidelines include the use of gamut area index as a complementary metric to CRI for assuring good color rendering.

Seawater operating bio-photovoltaic cells coupling semiconductor photoanodes and enzymatic biocathodes

DEFF Research Database (Denmark)

Zhang, Lingling; Alvarez-Martos, Isabel; Vakurov, Alexander

2017-01-01

and inexpensive way. Here, we report clean and sustainable conversion of solar energy into electricity by photo-and bio-electrocatalytic recycling of the H2O/O-2 redox couple in a hybrid bio-photovoltaic (BPV) membraneless cell comprising a sunlight-illuminated water-oxidizing semiconductor anode (either Zn......-doped hematite or TiO2) and an oxygen-reducing enzymatic biocathode, in such environmental media as seawater. Upon simulated solar light illumination (AM 1.5G, 100 mW cm(-2)), the maximum power density (P-max) generated by the cell was 236 and 21.4 mu W cm(-2) in 1 M Tris-HCl and seawater, both at pH 8...... thermodynamically feasible coupling of cost-effective photoactive materials such as TiO2 or hematite semiconductors and enzymatic counterparts in seawater media opens a prospective clean and sustainable way of transformation of the most abundant, clean and renewable source of energy - solar light - and the Earth...

Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

Directory of Open Access Journals (Sweden)

Fengbing Wu

2012-01-01

Full Text Available We have investigated the feasibility of employing quantum dot (QD phosphor-based light-emitting diodes (LEDs in aviation applications that request Night Vision Imaging Systems (NVIS compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nanocrystal QDs can be tailored by varying the nanocrystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

Modeling of gain saturation effects in active semiconductor photonic crystal waveguides

DEFF Research Database (Denmark)

Chen, Yaohui; Mørk, Jesper

2012-01-01

In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated.......In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated....

Spectral characteristics of light sources for S-cone stimulation.

Science.gov (United States)

Schlegelmilch, F; Nolte, R; Schellhorn, K; Husar, P; Henning, G; Tornow, R P

2002-11-01

Electrophysiological investigations of the short-wavelength sensitive pathway of the human eye require the use of a suitable light source as a S-cone stimulator. Different light sources with their spectral distribution properties were investigated and compared with the ideal S-cone stimulator. First, the theoretical background of the calculation of relative cone energy absorption from the spectral distribution function of the light source is summarized. From the results of the calculation, the photometric properties of the ideal S-cone stimulator will be derived. The calculation procedure was applied to virtual light sources (computer generated spectral distribution functions with different medium wavelengths and spectrum widths) and to real light sources (blue and green light emitting diodes, blue phosphor of CRT-monitor, multimedia projector, LCD monitor and notebook display). The calculated relative cone absorbencies are compared to the conditions of an ideal S-cone stimulator. Monochromatic light sources with wavelengths of less than 456 nm are close to the conditions of an ideal S-cone stimulator. Spectrum widths up to 21 nm do not affect the S-cone activation significantly (S-cone activation change < 0.2%). Blue light emitting diodes with peak wavelength at 448 nm and spectrum bandwidth of 25 nm are very useful for S-cone stimulation (S-cone activation approximately 95%). A suitable display for S-cone stimulation is the Trinitron computer monitor (S-cone activation approximately 87%). The multimedia projector has a S-cone activation up to 91%, but their spectral distribution properties depends on the selected intensity. LCD monitor and notebook displays have a lower S-cone activation (< or = 74%). Carefully selecting the blue light source for S-cone stimulation can reduce the unwanted L-and M-cone activation down to 4% for M-cones and 1.5% for L-cones.

High-intensity sources for light ions

International Nuclear Information System (INIS)

Leung, K.N.

1995-10-01

The use of the multicusp plasma generator as a source of light ions is described. By employing radio-frequency induction discharge, the performance of the multicusp source is greatly improved, both in lifetime and in high brightness H + and H - beam production. A new technique for generating multiply-charged ions in this type of ion source is also presented

Architectures for Improved Organic Semiconductor Devices

Science.gov (United States)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

Energy transfer dynamics from individual semiconductor nanoantennae to dye molecules with implication to light-harvesting nanosystems

Science.gov (United States)

Shan, Guangcun; Hu, Mingjun; Yan, Ze; Li, Xin; Huang, Wei

2018-03-01

Semiconductor nanocrystals can be used as nanoscale optical antennae to photoexcite individual dye molecules in an ensemble via energy transfer mechanism. The theoretical framework developed by Förster and others describes how electronic excitation migrates in the photosynthetic apparatus of plants, algae, and bacteria from light absorbing pigments to reaction centers where light energy is utilized for the eventual conversion into chemical energy. Herein we investigate the effect of the average donor-acceptor spacing on the time-resolved fluorescence intensity and dynamics of single donor-acceptor pairs with the dye acceptor concentration decreasing by using quantum Monte-Carlo simulation of FRET dynamics. Our results validated that the spatial disorder controlling the microscopic energy transfer rates accounts for the scatter in donor fluorescence lifetimes and intensities, which provides a new design guideline for artificial light-harvesting nanosystems.

Diagnostics for electrical discharge light sources : pushing the limits

NARCIS (Netherlands)

Zissis, G.; Haverlag, M.

2010-01-01

Light sources play an indispensable role in the daily life of any human being. Quality of life, health and urban security related to traffic and crime prevention depend on light and on its quality. In fact, every day approximately 30 billion electric light sources operate worldwide. These electric

Energy-saving quality road lighting with colloidal quantum dot nanophosphors

Science.gov (United States)

Erdem, Talha; Kelestemur, Yusuf; Soran-Erdem, Zeliha; Ji, Yun; Demir, Hilmi Volkan

2014-12-01

Here the first photometric study of road-lighting white light-emitting diodes (WLEDs) integrated with semiconductor colloidal quantum dots (QDs) is reported enabling higher luminance than conventional light sources, specifically in mesopic vision regimes essential to street lighting. Investigating over 100 million designs uncovers that quality road-lighting QD-WLEDs, with a color quality scale and color rendering index ≥85, enables 13-35% higher mesopic luminance than the sources commonly used in street lighting. Furthermore, these QD-WLEDs were shown to be electrically more efficient than conventional sources with power conversion efficiencies ≥16-29%. Considering this fact, an experimental proof-of-concept QD-WLED was demonstrated, which is the first account of QD based color conversion custom designed for street lighting applications. The obtained white LED achieved the targeted mesopic luminance levels in accordance with the road lighting standards of the USA and the UK. These results indicate that road-lighting QD-WLEDs are strongly promising for energy-saving quality road lighting.

National Synchrotron Light Source: vacuum system for National Synchrotron Light Source

International Nuclear Information System (INIS)

Schuchman, J.C.; Godel, J.B.; Jordan, W.; Oversluizen, T.

1978-01-01

The National Synchrotron Light Source (NSLS), a 24 million dollar project under construction at Brookhaven National Laboratory (BNL), is a research facility dedicated to the production of synchrotron radiation. Synchrotron radiation is that radiation produced by the acceleration of charged particles at near the speed of light. This facility will provide a continuous spectrum of radiation from the vacuum ultraviolet to the hard x-ray range. The radiation will be highly intense, 100% polarized, extremely well collimated and will have a pulsed time structure. The radiation will be produced in two electron storage rings at energies of 700 MeV and 2.5 GeV, respectively. A maximum of one ampere at 2 GeV, or one-half ampere at 2.5 GeV, of electron beam will be stored

Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

International Nuclear Information System (INIS)

Cocquelin, B.

2009-02-01

Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

Robust photometric stereo using structural light sources

Science.gov (United States)

Han, Tian-Qi; Cheng, Yue; Shen, Hui-Liang; Du, Xin

2014-05-01

We propose a robust photometric stereo method by using structural arrangement of light sources. In the arrangement, light sources are positioned on a planar grid and form a set of collinear combinations. The shadow pixels are detected by adaptive thresholding. The specular highlight and diffuse pixels are distinguished according to their intensity deviations of the collinear combinations, thanks to the special arrangement of light sources. The highlight detection problem is cast as a pattern classification problem and is solved using support vector machine classifiers. Considering the possible misclassification of highlight pixels, the ℓ1 regularization is further employed in normal map estimation. Experimental results on both synthetic and real-world scenes verify that the proposed method can robustly recover the surface normal maps in the case of heavy specular reflection and outperforms the state-of-the-art techniques.

High-brightness electron guns for linac-based light sources

International Nuclear Information System (INIS)

Lewellen, J.W.

2004-01-01

Most proposed linac-based light sources, such as single-pass free-electron lasers and energy-recovery-linacs, require very high-brightness electron beams in order to achieve their design performance. These beam requirements must be achieved not on an occasional basis, but rather must be met by every bunch produced by the source over extended periods of time. It is widely assumed that the beam source will be a photocathode electron gun; the selection of accelerator technique (e.g., dc or rf) for the gun is more dependent on the application.The current state of the art of electron beam production is adequate but not ideal for the first generation of linac-based light sources, such as the Linac Coherent Light Source (LCLS) x-ray free-electron laser (X-FEL). For the next generation of linac-based light sources, an order of magnitude reduction in the transverse electron beam emittance is required to significantly reduce the cost of the facility. This is beyond the present state of the art, given the other beam properties that must be maintained. The requirements for current and future linac-based light source beam sources are presented here, along with a review of the present state of the art. A discussion of potential paths towards meeting future needs is presented at the conclusion.

Emission and Absorption Entropy Generation in Semiconductors

DEFF Research Database (Denmark)

Reck, Kasper; Varpula, Aapo; Prunnila, Mika

2013-01-01

While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

Defects in semiconductors

International Nuclear Information System (INIS)

Pimentel, C.A.F.

1983-01-01

Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

Femtosecond Light Source for Phase-Controlled Multiphoton Ionization

International Nuclear Information System (INIS)

Sokolov, A. V.; Walker, D. R.; Yavuz, D. D.; Yin, G. Y.; Harris, S. E.

2001-01-01

We describe a femtosecond Raman light source with more than an octave of optical bandwidth. We use this source to demonstrate phase control of multiphoton ionization under conditions where ionization requires eleven photons of the lowest frequency of the spectrum or five photons of the highest frequency. The nonlinearity of the photoionization process allows us to characterize the light source. Experiment-to-theory comparison implies generation of a near single-cycle waveform

The Dynamics of Semiconductor Optical Amplifiers – Modeling and Applications

DEFF Research Database (Denmark)

Mørk, Jesper; Nielsen, Mads Lønstrup; Berg, Tommy Winther

2003-01-01

The importance of semiconductor optical amplifiers is discussed. A semiconductor optical amplifier (SOA) is a semiconductor laser with anti-reflection coated facets that amplifies an injected light signal by means of stimulated emission. SOAs have a number of unique properties that open up...

Thiophene-Based Organic Semiconductors.

Science.gov (United States)

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

DUV light source sustainability achievements and next steps

Science.gov (United States)

Roman, Yzzer; Cacouris, Ted; Raju, Kumar Raja Guvindan; Kanawade, Dinesh; Gillespie, Walt; Luo, Siqi; Mason, Eric; Manley, David; Das, Saptaparna

2018-03-01

Key sustainability opportunities have been executed in support of corporate initiatives to reduce the environmental footprint and decrease the running cost of DUV light sources. Previously, substantial neon savings were demonstrated over several years through optimized gas management technologies. Beyond this work, Cymer is developing the XLGR 100, a self-contained neon recycling system, to enable minimal gas consumption. The high efficiency results of the XLGR 100 in a production factory are validated in this paper. Cymer has also developed new light source modules with 33% longer life in an effort to reduce raw and associated resource consumption. In addition, a progress report is included regarding the improvements developed to reduce light source energy consumption.

Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors

Science.gov (United States)

Su, Ching-Hua (Inventor)

2013-01-01

The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

GPC light shaping a supercontinuum source

DEFF Research Database (Denmark)

Kopylov, Oleksii; Bañas, Andrew Rafael; Villangca, Mark Jayson

2015-01-01

Generalized Phase Contrast (GPC) is a versatile tool for efficiently rerouting and managing photon energy into speckle-free contiguous spatial light distributions. We have previously shown theoretically and numerically that a GPC Light Shaper shows robustness to shift in wavelength and can maintain...... both projection length scale and high efficiency over a range [0.75λ0; 1.5λ0] with λ0 as the characteristic design wavelength. With this performance across multiple wavelengths and the recent availability of tabletop supercontinuum lasers, GPC light shaping opens the possibility for creatively...... incorporating various multi-wavelength approaches into spatially shaped excitations that can enable new broadband light applications. We verify this new approach using a supercontinuum light source, interfaced with a compact GPC light shaper. Our experiments give ~70% efficiency, ~3x intensity gain, and ~85...

Toward a fourth-generation light source

International Nuclear Information System (INIS)

Moncton, D. E.

1999-01-01

Historically, x-ray research has been propelled by the existence of urgent and compelling scientific questions and the push of powerful and exquisite source technology. These two factors have gone hand in hand since Rontgen discovered x-rays. Here we review the progress being made with existing third-generation synchrotron-radiation light sources and the prospects for a fourth-generation light source with dramatically improved laser-like beam characteristics. The central technology for high-brilliance x-ray beams is the x-ray undulator, a series of alternating-pole magnets situated above and below the particle beam. When the particle beam is oscillated by the alternating magnetic fields, a set of. interacting and interfering wave fronts is produced, which leads to an x-ray beam with extraordinary properties. Third-generation sources of light in the hard x-ray range have been constructed at three principal facilities: the European Synchrotrons Radiation Facility (ESRF) in France; the Super Photon Ring 8-GeV (or Spring-8) in Japan; and the Advanced Photon Source (APS) in the US. Undulator technology is also used on a number of low-energy machines for radiation in the ultraviolet and soft x-ray regimes. At the APS, these devices exceed all of our original expectations for beam brilliance, tunability, spectral range, and operational flexibility. Shown in Fig. 1 are the tuning curves of the first few harmonics, showing x-ray production from a few kV to better than 40 keV. High-brilliance radiation extends to over 100 keV

Matrix light and pixel light: optical system architecture and requirements to the light source

Science.gov (United States)

Spinger, Benno; Timinger, Andreas L.

2015-09-01

Modern Automotive headlamps enable improved functionality for more driving comfort and safety. Matrix or Pixel light headlamps are not restricted to either pure low beam functionality or pure high beam. Light in direction of oncoming traffic is selectively switched of, potential hazard can be marked via an isolated beam and the illumination on the road can even follow a bend. The optical architectures that enable these advanced functionalities are diverse. Electromechanical shutters and lens units moved by electric motors were the first ways to realize these systems. Switching multiple LED light sources is a more elegant and mechanically robust solution. While many basic functionalities can already be realized with a limited number of LEDs, an increasing number of pixels will lead to more driving comfort and better visibility. The required optical system needs not only to generate a desired beam distribution with a high angular dynamic, but also needs to guarantee minimal stray light and cross talk between the different pixels. The direct projection of the LED array via a lens is a simple but not very efficient optical system. We discuss different optical elements for pre-collimating the light with minimal cross talk and improved contrast between neighboring pixels. Depending on the selected optical system, we derive the basic light source requirements: luminance, surface area, contrast, flux and color homogeneity.

Wavelength sweepable laser source

DEFF Research Database (Denmark)

2014-01-01

Wavelength sweepable laser source is disclosed, wherein the laser source is a semiconductor laser source adapted for generating laser light at a lasing wavelength. The laser source comprises a substrate, a first reflector, and a second reflector. The first and second reflector together defines...... and having a rest position, the second reflector and suspension together defining a microelectromechanical MEMS oscillator. The MEMS oscillator has a resonance frequency and is adapted for oscillating the second reflector on either side of the rest position.; The laser source further comprises electrical...... connections adapted for applying an electric field to the MEMS oscillator. Furthermore, a laser source system and a method of use of the laser source are disclosed....

Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

International Nuclear Information System (INIS)

Shpotyuk, Oleh; Filipecki, Jacek; Shpotyuk, Mykhaylo

2013-01-01

Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As 2 S 3 chalcogenide glassy semiconductors after γ-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As 4 + ; S 1 - ) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As 2 S 3 is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Apparatus for testing semiconductor devices and capacitors

International Nuclear Information System (INIS)

York, R.A.

1984-01-01

An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

Potential Sources of Polarized Light from a Plant Canopy

Science.gov (United States)

Vanderbilt, Vern; Daughtry, Craig; Dahlgren, Robert

2016-01-01

Field measurements have demonstrated that sunlight polarized during a first surface reflection by shiny leaves dominates the optical polarization of the light reflected by shiny-leafed plant canopies having approximately spherical leaf angle probability density functions ("Leaf Angle Distributions" - LAD). Yet for other canopies - specifically those without shiny leaves and/or spherical LADs - potential sources of optically polarized light may not always be obvious. Here we identify possible sources of polarized light within those other canopies and speculate on the ecologically important information polarization measurements of those sources might contain.

Synchrotron light sources: A powerful tool for science and technology

International Nuclear Information System (INIS)

Schlachter, F.; Robinson, A.

1996-01-01

A new generation of synchrotron light sources is producing extremely bright beams of vacuum-ultraviolet and x-ray radiation, poweful new tools for research in a wide variety of basic and applied sciences. Spectromicroscopy using high spectral and spatial resolution is a new way of seeing, offering many opportunities in the study of matter. Development of a new light source provides the country or region of the world in which the light source is located many new opportunities: a focal point for research in many scientific and technological areas, a means of upgrading the technology infrastructure of the country, a means of training students, and a potential service to industry. A light source for Southeast Asia would thus be a major resource for many years. Scientists and engineers from light sources around the world look forward to providing assistance to make this a reality in Southeast Asia

Synchrotron light sources: A powerful tool for science and technology

International Nuclear Information System (INIS)

Schlachter, F.; Robinson, A.

1996-01-01

A new generation of synchrotron light sources is producing extremely bright beams of vacuum-ultraviolet and x-ray radiation, powerful new tools for research in a wide variety of basic and applied sciences. Spectromicroscopy using high spectral and spatial resolution is a new way of seeing, offering many opportunities in the study of matter. Development of a new light source provides the country or region of the world in which the light source is located many new opportunities: a focal point for research in many scientific and technological areas, a means of upgrading the technology infrastructure of the country, a means of training students, and a potential service to industry. A light source for Southeast Asia would thus be a major resource for many years. Scientists and engineers from light sources around the world look forward to providing assistance to make this a reality in Southeast Asia

New Storage Ring Light Sources on the Horizon

CERN Document Server

Podobedov, Boris

2005-01-01

The world's appetite for light sources keeps growing as new ones are under construction or being proposed for every continent but Antarctica. While some viable alternatives are emerging, the great majority of new light sources are based on mature electron storage ring technology. We review the design and performance of the new machines worldwide and speculate on the future directions.

BROADBAND TRAVELLING WAVE SEMICONDUCTOR OPTICAL AMPLIFIER

DEFF Research Database (Denmark)

2010-01-01

Broadband travelling wave semiconductor optical amplifier (100, 200, 300, 400, 800) for amplification of light, wherein the amplifier (100, 200, 300, 400, 800) comprises a waveguide region (101, 201, 301, 401, 801) for providing confinement of the light in transverse directions and adapted...

Iranian Light Source Facility, A third generation light source laboratory

Directory of Open Access Journals (Sweden)

J Rahighi

2015-09-01

Full Text Available The Iranian Light Source Facility (ILSF project is the first large scale accelerator facility which is currently under planning in Iran. On the basis of the present design, circumference of the 3 GeV storage ring is 528 m. Beam current and natural beam emittance are 400 mA and 0.477 nm.rad, respectively. Some prototype accelerator components such as high power solid state radio frequency amplifiers, low level RF system, thermionic RF gun, H-type dipole and quadruple magnets, magnetic measurement laboratory and highly stable magnet power supplies have been constructed at ILSF R&D laboratory

46 CFR 183.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

Radioactive starting aids for electrodeless light sources

International Nuclear Information System (INIS)

Proud, J.M.; Regan, R.J.; Haugsjaa, P.O.; Baird, D.H.

1980-01-01

The use of radioactive sources of α particles, β particles or γ rays as aids in starting a discharge in an electrodeless light source is discussed. The advantages of siting the sources at various positions in the device are discussed. Preferred materials are 85 Kr and 241 Am. (U.K.)

Characterization of metal-functionalized flax orbitide as a new candidate for light-emitting semiconductor

International Nuclear Information System (INIS)

Bauer, Robert; Bazylewski, Paul; Chang, Gap Soo; Jadhav, Pramodkumar; Shen, Jianheng; Okinyo-Owiti, Denis Paskal; Reaney, Martin; Yang, Jian; Sammynaiken, Ramaswami

2015-01-01

Organic materials display promise in numerous electronic applications, complimentary to traditional semi-conducting materials. Cyclolinopeptides show promise in light-emitting applications as an organic semiconductor. Photoluminescence measurements indicate charge transfer between the peptide and the metal, resulting in an increase in intensity of the emission from around the metal in the Cyclolinopeptide complex. Complementary X-ray absorption near-edge spectroscopy (XANES) shows a change in occupation of energy states in the peptide when complexed with the metal, indicating charge transfer, but peak positions show the peptide is not chemically changed by the metal. Combining X-ray emission and XANES provides element specific partial density of states, to estimate the element specific energy gap which is the proposed emission range for the peptide material. Organic light emitting diode devices have been fabricated, although no measurable emission has been seen as of yet. The devices have diode like current-voltage characteristics showing the peptide is semi-conducting with a threshold voltage of approximately 2.5 V. (paper)

Polarized Light Sources for photocathode electron guns at SLAC

International Nuclear Information System (INIS)

Woods, M.; Frisch, J.; Witte, K.; Zolotorev, M.

1992-12-01

We describe current and future Polarized Light Sources at SLAC for use with photocathode electron guns to produce polarized electron beams. The SLAC experiments SLD and E142 are considered, and are used to define the required parameters for the Polarized Light Sources

Investigation of rf plasma light sources for dye laser excitation

International Nuclear Information System (INIS)

Kendall, J.S.; Jaminet, J.F.

1975-06-01

Analytical and experimental studies were performed to assess the applicability of radio frequency (rf) induction heated plasma light sources for potential excitation of continuous dye lasers. Experimental efforts were directed toward development of a continuous light source having spectral flux and emission characteristics approaching that required for pumping organic dye lasers. Analytical studies were performed to investigate (1) methods of pulsing the light source to obtain higher radiant intensity and (2) methods of integrating the source with a reflective cavity for pumping a dye cell. (TFD)

Modelling of a laser-pumped light source for endoscopic surgery

Science.gov (United States)

Nadeau, Valerie J.; Elson, Daniel S.; Hanna, George B.; Neil, Mark A. A.

2008-09-01

A white light source, based on illumination of a yellow phosphor with a fibre-coupled blue-violet diode laser, has been designed and built for use in endoscopic surgery. This narrow light probe can be integrated into a standard laparoscope or inserted into the patient separately via a needle. We present a Monte Carlo model of light scattering and phosphorescence within the phosphor/silicone matrix at the probe tip, and measurements of the colour, intensity, and uniformity of the illumination. Images obtained under illumination with this light source are also presented, demonstrating the improvement in illumination quality over existing endoscopic light sources. This new approach to endoscopic lighting has the advantages of compact design, improved ergonomics, and more uniform illumination in comparison with current technologies.

Photobiocatalytic alcohol oxidation using LED light sources

NARCIS (Netherlands)

Rauch, M.C.R.; Schmidt, S.; Arends, I.W.C.E.; oppelt, K.; Kara, S; Hollmann, F.

2016-01-01

The photocatalytic oxidation of NADH using a flavin photocatalyst and a simple blue LED light source is reported. This in situ NAD+ regeneration system can be used to promote biocatalytic, enantioselective oxidation reactions. Compared to the traditional use of white light bulbs this method enables

46 CFR 129.360 - Semiconductor-rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

VCSELs and silicon light sources exploiting SOI grating mirrors

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2012-01-01

In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI...... the Bragg reflector. Numerical simulations show that both the silicon light source and the VCSEL exploiting SOI grating mirrors have superior performances, compared to existing silicon light sources and long wavelength VCSELs. These devices are highly adequate for chip-level optical interconnects as well...

Conversion degrees of resin composites using different light sources.

Science.gov (United States)

Ozturk, Bora; Cobanoglu, Nevin; Cetin, Ali Rıza; Gunduz, Beniz

2013-01-01

The objective of this study was to compare the conversion degree of six different composite materials (Filtek Z 250, Filtek P60, Spectrum TPH, Pertac II, Clearfil AP-X, and Clearfil Photo Posterior) using three different light sources (blue light-emitting diode [LED], plasma arc curing [PAC], and conventional halogen lamp [QTH]). Composites were placed in a 2 mm thick and 5 mm diameter Teflon molds and light cured from the top using three methods: LED for 40 s, PAC for 10 s, and QTH for 40 s. A Fourier Transform Infrared Spectroscopy (FTIR) was used to evaluate the degree of conversion (DC) (n=5). The results were analyzed with two-way analysis of variance and Tukey HSD test. DC was significantly influenced by two variables, light source and composite (PDC values than LED (PDC values of QTH and PAC or between DC values of LED and PAC (P>.05). The highest DC was observed in the Z 250 composite specimens following photopolymerization with QTH (70%). The lowest DC was observed in Clearfil Photo Posterior composite specimens following photo-polymerization with LED (43%). The DC was found to be changing according to both light sources and composite materials used. Conventional light halogen (QTH) from light sources and Filtek Z 250 and Filtek P 60 among composite materials showed the most DC performance.

Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors

Science.gov (United States)

Nashy, El-Shahat H. A.; Al-Ashkar, Emad; Abdel Moez, A.

2012-02-01

Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows.

Comparative Study of the Photocatalytic Activity of Semiconductor Nanostructures and Their Hybrid Metal Nanocomposites on the Photodegradation of Malathion

Directory of Open Access Journals (Sweden)

Dina Mamdouh Fouad

2012-01-01

Full Text Available This work is devoted to synthesize different semiconductor nanoparticles and their metal-hybrid nanocomposites such as TiO2, Au/TiO2, ZnO, and Au/ZnO. The morphology and crystal structure of the prepared nanomaterials are characterized by the TEM and XRD, respectively. These materials are used as catalysts for the photodegradation of Malathion which is one of the most commonly used pesticides in the developing countries. The degradation of 10 ppm Malathion under ultraviolet (UV and visible light in the presence of the different synthesized nanocomposites was analyzed with high-performance liquid chromatography (HPLC and UV-Visible Spectra. A comprehensive study is carried out for the catalytic efficiency of the prepared nanoparticles. Different factors influencing the catalytic photodegradation are investigated, as different light source, surface coverage, and nature of the organic contaminants. The results indicate that hybrid nanocomposite of the semiconductor-metal hybrid serves as a better catalytic system compared with semiconductor nanoparticles themselves.

Fiscal 1975 Sunshine Project research report. Research on hydrogen production technology mainly by photo- semiconductor; 1975 nendo hikari handotai wo shutai to suru suiso seizo gijutsu no kenkyu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1976-05-28

In fiscal 1975, to study the possibility of photochemical decomposition as new hydrogen production technique based on the research result in the preceding fiscal year, study was made on some materials useful as electrode for photocells among various semiconducting materials with large solar photo-electromotive force. Study was made on the kind and combination of electrode materials, and electrolyte composition for photocells through measurement of photocell characteristics by various combinations of semiconductor electrodes. As for the impact of light sources, study was made on the photosensitization phenomenon by xenon light, solar light and xenon lights with various spectral profiles through specific filters, and the relation between a light intensity and hydrogen efficiency. As useful semiconductor photocell electrode systems, combinations of n-type GaP or n- type GaAs and p-type GaP or p-type GaAs were most efficient. As preventive technique of semiconductor electrodes from dissolution, coating technique of various materials showed insufficient results. (NEDO)

Light source distribution and scattering phase function influence light transport in diffuse multi-layered media

Science.gov (United States)

Vaudelle, Fabrice; L'Huillier, Jean-Pierre; Askoura, Mohamed Lamine

2017-06-01

Red and near-Infrared light is often used as a useful diagnostic and imaging probe for highly scattering media such as biological tissues, fruits and vegetables. Part of diffusively reflected light gives interesting information related to the tissue subsurface, whereas light recorded at further distances may probe deeper into the interrogated turbid tissues. However, modelling diffusive events occurring at short source-detector distances requires to consider both the distribution of the light sources and the scattering phase functions. In this report, a modified Monte Carlo model is used to compute light transport in curved and multi-layered tissue samples which are covered with a thin and highly diffusing tissue layer. Different light source distributions (ballistic, diffuse or Lambertian) are tested with specific scattering phase functions (modified or not modified Henyey-Greenstein, Gegenbauer and Mie) to compute the amount of backscattered and transmitted light in apple and human skin structures. Comparisons between simulation results and experiments carried out with a multispectral imaging setup confirm the soundness of the theoretical strategy and may explain the role of the skin on light transport in whole and half-cut apples. Other computational results show that a Lambertian source distribution combined with a Henyey-Greenstein phase function provides a higher photon density in the stratum corneum than in the upper dermis layer. Furthermore, it is also shown that the scattering phase function may affect the shape and the magnitude of the Bidirectional Reflectance Distribution (BRDF) exhibited at the skin surface.

UV emissions from low energy artificial light sources.

Science.gov (United States)

Fenton, Leona; Moseley, Harry

2014-01-01

Energy efficient light sources have been introduced across Europe and many other countries world wide. The most common of these is the Compact Fluorescent Lamp (CFL), which has been shown to emit ultraviolet (UV) radiation. Light Emitting Diodes (LEDs) are an alternative technology that has minimal UV emissions. This brief review summarises the different energy efficient light sources available on the market and compares the UV levels and the subsequent effects on the skin of normal individuals and those who suffer from photodermatoses. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Comparative Analysis of Semiconductor Power Losses of Galvanically Isolated Quasi-Z-Source and Full-Bridge Boost DC-DC Converters

Directory of Open Access Journals (Sweden)

Kosenko Roman

2015-07-01

Full Text Available This paper compares semiconductor losses of the galvanically isolated quasi-Z-source converter and full-bridge boost DC-DC converter with active clamping circuit. Operation principle of both converters is described. Short design guidelines are provided as well. Results of steady state analysis are used to calculate semiconductor power losses for both converters. Analytical expressions are derived for all types of semiconductor power losses present in these converters. The theoretical results were verified by means of numerical simulation performed in the PSIM simulation software. Its add-on module “Thermal module” was used to estimate semiconductor power losses using the datasheet parameters of the selected semiconductor devices. Results of calculations and simulation study were obtained for four operating points with different input voltage and constant input current to compare performance of the converters in renewable applications, like photovoltaic, where input voltage and power can vary significantly. Power loss breakdown is detailed and its dependence on the converter output power is analyzed. Recommendations are given for the use of the converter topologies in applications with low input voltage and relatively high input current.

Purcell effect for active tuning of light scattering from semiconductor optical antennas.

Science.gov (United States)

Holsteen, Aaron L; Raza, Søren; Fan, Pengyu; Kik, Pieter G; Brongersma, Mark L

2017-12-15

Subwavelength, high-refractive index semiconductor nanostructures support optical resonances that endow them with valuable antenna functions. Control over the intrinsic properties, including their complex refractive index, size, and geometry, has been used to manipulate fundamental light absorption, scattering, and emission processes in nanostructured optoelectronic devices. In this study, we harness the electric and magnetic resonances of such antennas to achieve a very strong dependence of the optical properties on the external environment. Specifically, we illustrate how the resonant scattering wavelength of single silicon nanowires is tunable across the entire visible spectrum by simply moving the height of the nanowires above a metallic mirror. We apply this concept by using a nanoelectromechanical platform to demonstrate active tuning. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

The advanced light source: America's brightest light for science and industry

International Nuclear Information System (INIS)

Cross, J.; Lawler, G.

1994-03-01

America's brightest light comes from the Advanced Light Source (ALS), a national facility for scientific research, product development, and manufacturing. Completed in 1993, the ALS produces light in the ultraviolet and x-ray regions of the spectrum. Its extreme brightness provides opportunities for scientific and technical progress not possible anywhere else. Technology is poised on the brink of a major revolution - one in which vital machine components and industrial processes will be drastically miniaturized. Industrialized nations are vying for leadership in this revolution - and the huge economic rewards the leaders will reap

Multi-wavelength mid-IR light source for gas sensing

Science.gov (United States)

Karioja, Pentti; Alajoki, Teemu; Cherchi, Matteo; Ollila, Jyrki; Harjanne, Mikko; Heinilehto, Noora; Suomalainen, Soile; Viheriälä, Jukka; Zia, Nouman; Guina, Mircea; Buczyński, Ryszard; Kasztelanic, Rafał; Kujawa, Ireneusz; Salo, Tomi; Virtanen, Sami; Kluczyński, Paweł; Sagberg, Hâkon; Ratajczyk, Marcin; Kalinowski, Przemyslaw

2017-02-01

Cost effective multi-wavelength light sources are key enablers for wide-scale penetration of gas sensors at Mid-IR wavelength range. Utilizing novel Mid-IR Si-based photonic integrated circuits (PICs) filter and wide-band Mid-IR Super Luminescent Light Emitting Diodes (SLEDs), we show the concept of a light source that covers 2.5…3.5 μm wavelength range with a resolution of price can be lowered in high volumes by utilizing tailored molded IR lens technology and automated packaging and assembling technologies. The status of the development of the key components of the light source are reported. The PIC is based on the use of micron-scale SOI technology, SLED is based on AlGaInAsSb materials and the lenses are tailored heavy metal oxide glasses fabricated by the use of hot-embossing. The packaging concept utilizing automated assembly tools is depicted. In safety and security applications, the Mid-IR wavelength range covered by the novel light source allows for detecting several harmful gas components with a single sensor. At the moment, affordable sources are not available. The market impact is expected to be disruptive, since the devices currently in the market are either complicated, expensive and heavy instruments, or the applied measurement principles are inadequate in terms of stability and selectivity.

Diamond Light Source - A Next Generation SR Facility

International Nuclear Information System (INIS)

Materlik, G.

2004-01-01

After the very successful start and the by now almost 10 years operation of the 3rd generation x-ray sources ESRF, APS and Spring-8 smaller storage rings are being planned and constructed with properties emphasising applications with photon energies around the 10 keV spectral region. In the UK the Government and the medical foundation Wellcome Trust have decided to build the Diamond Light Source Facility in the South of Oxfordshire right next to the Rutherford Appleton Laboratory. The joint venture company Diamond Light Source Limited has been created to plan, construct, and operate this facility. (author)

Direction-division multiplexed holographic free-electron-driven light sources

Science.gov (United States)

Clarke, Brendan P.; MacDonald, Kevin F.; Zheludev, Nikolay I.

2018-01-01

We report on a free-electron-driven light source with a controllable direction of emission. The source comprises a microscopic array of plasmonic surface-relief holographic domains, each tailored to direct electron-induced light emission at a selected wavelength into a collimated beam in a prescribed direction. The direction-division multiplexed source is tested by driving it with the 30 kV electron beam of a scanning electron microscope: light emission, at a wavelength of 800 nm in the present case, is switched among different output angles by micron-scale repositioning of the electron injection point among domains. Such sources, with directional switching/tuning possible at picosecond timescales, may be applied to field-emission and surface-conduction electron-emission display technologies, optical multiplexing, and charged-particle-beam position metrology.

Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light

Energy Technology Data Exchange (ETDEWEB)

Marchelek, M. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Grabowska, E., E-mail: ewelina.grabowska@ug.edu.pl [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Klimczuk, T. [Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdansk University of Technology, G. Narutowicza 11/12, 80-233 Gdansk (Poland); Lisowski, W. [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44-52, 01-224 Warsaw (Poland); Zaleska-Medynska, A. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland)

2017-01-30

Highlights: • Novel semiconductors decorated by CdTe QDs and/or Pt NPs were synthesized. • Photodeposition and radiolysis is an effective method to obtaining Pt NPs. • CdTe decorated samples were prepared by absorption of QDs on matrix surface. • KTaO{sub 3}/CdTe-Pt{sub (R)} showed highest photocatalytic performance. • The enhanced performance was associated with electron trap mechanism. - Abstract: A novel synthesis process was used to prepare TiO{sub 2} microspheres, TiO{sub 2} P-25, SrTiO{sub 3} and KTaO{sub 3} decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) with energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), photoluminescence spectrometry (PL), Fourier transform infrared (FT-IR) and Raman spectra, diffuse reflectance spectroscopy (DRS) and BET surface area analysis. The photocatalytic decomposition of toluene in gas phase, activated by light-emitting diodes (LEDs), with the CdTe/Pt nanoparticles-modified TiO{sub 2} microspheres, P25, SrTiO{sub 3} and KTaO{sub 3} semiconductors was investigated under UV–vis and visible irradiation.The results showed that the photoactivity depends on semiconductor matrix. The highest photoactivity under Vis light was observed for KTaO{sub 3}/CdTe-Pt{sub (R)} sample (56% of toluene was decompose after 30 min of irradiation). The efficiency of the most active sample was 3 times higher than result for P25 and two times higher than for unmodified KTaO{sub 3}.

A new LED light source for display cases

DEFF Research Database (Denmark)

Dam-Hansen, Carsten; Petersen, Paul Michael

Abstract: We report a new LED light source suitable for illumination of gold objects. It has a variable correlated color temperature from 2760 K to 2200 K with a high color rendering index up to 97.......Abstract: We report a new LED light source suitable for illumination of gold objects. It has a variable correlated color temperature from 2760 K to 2200 K with a high color rendering index up to 97....

Ocular exposure to ultraviolet and visible radiation from light sources

International Nuclear Information System (INIS)

Hietanen, M.

1992-01-01

Exposure of the eyes to UV radiation and blue light of artificial light sources and the sun was evaluated. A spectroradiometer was used to determine the spectral irradiance at 1 nm intervals from 250 to 800 nm. Various groups of workers are at risk of ocular over-exposure to optical radiation, outdoor workers maintenance personnel of bright light source as and wear eye-protectors with effective filtering of UV radiation and blue light. (author)

Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

Science.gov (United States)

Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

2011-02-28

A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.

III-nitride semiconductors and their modern devices

CERN Document Server

2013-01-01

This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and...

Long-pulse Supercontinuum Light Sources

DEFF Research Database (Denmark)

Moselund, Peter M.

A Supercontinuum (SC) is a broad spectrum generated from a narrow light source through non-linear effects. This thesis describes SC generation based on 1064 nm ps pulses in PCF fibres. We investigate how the SC spectrum can be modified and intensity noise reduced by feeding back part of the SC...

A comparison of color fidelity metrics for light sources using simulation of color samples under lighting conditions

Science.gov (United States)

Kwon, Hyeokjun; Kang, Yoojin; Jang, Junwoo

2017-09-01

Color fidelity has been used as one of indices to evaluate the performance of light sources. Since the Color Rendering Index (CRI) was proposed at CIE, many color fidelity metrics have been proposed to increase the accuracy of the metric. This paper focuses on a comparison of the color fidelity metrics in an aspect of accuracy with human visual assessments. To visually evaluate the color fidelity of light sources, we made a simulator that reproduces the color samples under lighting conditions. In this paper, eighteen color samples of the Macbeth color checker under test light sources and reference illuminant for each of them are simulated and displayed on a well-characterized monitor. With only a spectrum set of the test light source and reference illuminant, color samples under any lighting condition can be reproduced. In this paper, the spectrums of the two LED and two OLED light sources that have similar values of CRI are used for the visual assessment. In addition, the results of the visual assessment are compared with the two color fidelity metrics that include CRI and IES TM-30-15 (Rf), proposed by Illuminating Engineering Society (IES) in 2015. Experimental results indicate that Rf outperforms CRI in terms of the correlation with visual assessment.

Semiconductors and semimetals epitaxial microstructures

CERN Document Server

Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

1994-01-01

Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

Advanced Light Source Activity Report 2002

Energy Technology Data Exchange (ETDEWEB)

Duque, Theresa; Greiner, Annette; Moxon, Elizabeth; Robinson, Arthur; Tamura, Lori (Editors)

2003-06-12

This annual report of the Advanced Light Source details science highlights and facility improvements during the year. It also offers information on events sponsored by the facility, technical specifications, and staff and publication information.

Advanced Light Source Activity Report 2002

International Nuclear Information System (INIS)

Duque, Theresa; Greiner, Annette; Moxon, Elizabeth; Robinson, Arthur; Tamura, Lori

2003-01-01

This annual report of the Advanced Light Source details science highlights and facility improvements during the year. It also offers information on events sponsored by the facility, technical specifications, and staff and publication information

Below-bandgap photoreflection spectroscopy of semiconductor laser structures

International Nuclear Information System (INIS)

Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

2004-01-01

A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

Direct solar pumping of semiconductor lasers: A feasibility study

Science.gov (United States)

Anderson, Neal G.

1992-01-01

This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is

Advanced Light Source beam diagnostics systems

International Nuclear Information System (INIS)

Hinkson, J.

1993-10-01

The Advanced Light Source (ALS), a third-generation synchrotron light source, has been recently commissioned. Beam diagnostics were very important to the success of the operation. Each diagnostic system is described in this paper along with detailed discussion of its performance. Some of the systems have been in operation for two years. Others, in the storage ring, have not yet been fully commissioned. These systems were, however, working well enough to provide the essential information needed to store beam. The devices described in this paper include wall current monitors, a beam charge monitor, a 50 ohm Faraday cup, DC current transformers, broad-hand striplines, fluorescence screens, beam collimators and scrapers, and beam position monitors. Also, the means by which waveforms are digitized and displayed in the control room is discussed

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

Science.gov (United States)

Pura, J. L.; Anaya, J.; Souto, J.; Prieto, A. C.; Rodríguez, A.; Rodríguez, T.; Periwal, P.; Baron, T.; Jiménez, J.

2018-03-01

Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

Density and mobility effects of the majority carriers in organic semiconductors under light excitation

Energy Technology Data Exchange (ETDEWEB)

Vagenas, N.; Giannopoulou, A.; Kounavis, P., E-mail: pkounavis@upatras.gr [Department of Electrical and Computer Engineering, University of Patras, 26504 Patra (Greece)

2015-01-21

This study demonstrates that the effect of light excitation on the density and the mobility of the majority carriers can be explored in organic semiconductors by modulated photocurrent spectroscopy. The spectra of phase and amplitude of the modulated photocurrent of pentacene films indicate a significant increase in the density of the photogenerated mobile holes (majority carriers). This increase is accompanied by a comparatively much smaller increase of the steady state photocurrent response which can be reconciled with a decrease in the mobility (μ) of holes. The decrease of μ is supported from an unusual increase of the Y/μ ratio of the out-of-phase modulated photocurrent (Y) signal to the mobility under light excitation. It is proposed that the mobile holes, which are generated from the dissociation of the light-created excitons more likely near the pentacene-substrate interface by electron trapping, populate grain boundaries charging them and producing a downward band bending. As a result, potential energy barriers are build up which limit the transport of holes interacting through trapping-detrapping with deep partially occupied traps in the charged grain boundaries. On the other hand, the transport of holes interacting through trapping-detrapping with empty traps is found unaffected.

Phosphor converted laser diode light source for endoscopic diagnostics

DEFF Research Database (Denmark)

Krasnoshchoka, Anastasiia; Thorseth, Anders; Dam-Hansen, Carsten

2017-01-01

of the generated white light into thin optical fibres. The development involves designing optics for optimizing the light extraction efficiency and guiding of light to the area of interest. In this paper we compared the developed light source to the current standard in endoscopy – xenon arc lamps. Detailed...

Plasmonics for solid-state lighting : enhanced excitation and directional emission of highly efficient light sources

NARCIS (Netherlands)

Lozano, G.; Louwers, Davy J.; Rodriguez, S.R.K.; Murai, S.; Jansen, O.T.A.; Verschuuren, M.A.; Gomez Rivas, J.

2013-01-01

Light sources based on reliable and energy-efficient light-emitting diodes (LEDs) are instrumental in the development of solid-state lighting (SSL). Most research efforts in SSL have focused on improving both the intrinsic quantum efficiency (QE) and the stability of light emitters. For this reason,

Parallel Beam Dynamics Simulation Tools for Future Light Source Linac Modeling

International Nuclear Information System (INIS)

Qiang, Ji; Pogorelov, Ilya v.; Ryne, Robert D.

2007-01-01

Large-scale modeling on parallel computers is playing an increasingly important role in the design of future light sources. Such modeling provides a means to accurately and efficiently explore issues such as limits to beam brightness, emittance preservation, the growth of instabilities, etc. Recently the IMPACT codes suite was enhanced to be applicable to future light source design. Simulations with IMPACT-Z were performed using up to one billion simulation particles for the main linac of a future light source to study the microbunching instability. Combined with the time domain code IMPACT-T, it is now possible to perform large-scale start-to-end linac simulations for future light sources, including the injector, main linac, chicanes, and transfer lines. In this paper we provide an overview of the IMPACT code suite, its key capabilities, and recent enhancements pertinent to accelerator modeling for future linac-based light sources

X-ray micro-Tomography at the Advanced Light Source

Science.gov (United States)

The X-ray micro-Tomography Facility at the Advanced Light Source has been in operation since 2004. The source is a superconducting bend magnet of critical energy 10.5KeV; photon energy coverage is 8-45 KeV in monochromatic mode, and a filtered white light option yields useful photons up to 50 KeV. A...

FDML swept source at 1060 nm using a tapered amplifier

DEFF Research Database (Denmark)

Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang

2010-01-01

We present a novel frequency-swept light source working at 1060nm that utilizes a tapered amplifier as gain medium. These devices feature significantly higher saturation power than conventional semiconductor optical amplifiers and can thus improve the limited output power of swept sources in this...... an axial resolution of 15 µm in air (~11µm in tissue) for OCT applications can be achieved....

Electrical discharge light sources: a challenge for the future

International Nuclear Information System (INIS)

Zissis, G.

2001-01-01

The first electric powder lamp operated that 150 years ago, since then the evolution of light sources is astonishing. Today, more than 10 % of the global electric power produced worldwide serve fore light production from several billions lamps. Since last three decades incandescent lamps are gradually replaced by more energy efficient discharge lamps. In parallel, new generation of light emitting diodes, producing bright colours (including white) with luminous efficacy challenging even discharge lamps, appeared in past years. The objective of this paper is to focus on the state of art in the domain of light sources and discuss the challenges for the near future. (author)

Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors.

Science.gov (United States)

Nashy, El-Shahat H A; Al-Ashkar, Emad; Moez, A Abdel

2012-02-01

Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows. Copyright © 2011 Elsevier B.V. All rights reserved.

Near-field photometry for organic light-emitting diodes

Science.gov (United States)

Li, Rui; Harikumar, Krishnan; Isphording, Alexandar; Venkataramanan, Venkat

2013-03-01

Organic Light Emitting Diode (OLED) technology is rapidly maturing to be ready for next generation of light source for general lighting. The current standard test methods for solid state lighting have evolved for semiconductor sources, with point-like emission characteristics. However, OLED devices are extended surface emitters, where spatial uniformity and angular variation of brightness and colour are important. This necessitates advanced test methods to obtain meaningful data for fundamental understanding, lighting product development and deployment. In this work, a near field imaging goniophotometer was used to characterize lighting-class white OLED devices, where luminance and colour information of the pixels on the light sources were measured at a near field distance for various angles. Analysis was performed to obtain angle dependent luminous intensity, CIE chromaticity coordinates and correlated colour temperature (CCT) in the far field. Furthermore, a complete ray set with chromaticity information was generated, so that illuminance at any distance and angle from the light source can be determined. The generated ray set is needed for optical modeling and design of OLED luminaires. Our results show that luminance non-uniformity could potentially affect the luminaire aesthetics and CCT can vary with angle by more than 2000K. This leads to the same source being perceived as warm or cool depending on the viewing angle. As OLEDs are becoming commercially available, this could be a major challenge for lighting designers. Near field measurement can provide detailed specifications and quantitative comparison between OLED products for performance improvement.

Semiconductor testing method

International Nuclear Information System (INIS)

Brown, Stephen.

1992-01-01

In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

Photoelectronic properties of semiconductors

CERN Document Server

Bube, Richard H

1992-01-01

The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

Noise analysis of a white-light supercontinuum light source for multiple wavelength confocal laser scanning fluorescence microscopy

Energy Technology Data Exchange (ETDEWEB)

McConnell, Gail [Centre for Biophotonics, Strathclyde Institute for Biomedical Sciences, University of Strathclyde, 27 Taylor Street, Glasgow, G4 0NR (United Kingdom)

2005-08-07

Intensity correlations of a Ti : sapphire, Kr/Ar and a white-light supercontinuum were performed to quantify the typical signal amplitude fluctuations and hence ascertain the comparative output stability of the white-light supercontinuum source for confocal laser scanning microscopy (CLSM). Intensity correlations across a two-pixel sample (n = 1000) of up to 98%, 95% and 94% were measured for the Ti : sapphire, Kr/Ar and white-light supercontinuum source, respectively. The white-light supercontinuum noise level is therefore acceptable for CLSM, with the added advantage of wider wavelength flexibility over traditional CLSM excitation sources. The relatively low-noise white-light supercontinuum was then used to perform multiple wavelength sequential CLSM of guinea pig detrusor to confirm the reliability of the system and to demonstrate system flexibility.

EDITORIAL: Special Issue on advanced and emerging light sources Special Issue on advanced and emerging light sources

Science.gov (United States)

Haverlag, Marco; Kroesen, Gerrit; Ferguson, Ian

2011-06-01

The papers in this special issue of Journal of Physics D: Applied Physics (JPhysD) originate from the 12th International Symposium on the Science and Technology of Light Sources and the 3rd International Conference on White LEDs and Solid State Lighting, held 11-16 July 2010 at Eindhoven University. Abstracts of all papers presented at this combined conference were published in the Conference Proceedings LS-WLED 2010 by FAST-LS, edited by M Haverlag, G M W Kroesen and T Taguchi. Special issues of the previous three LS conferences have been well-cited and have proven to be an important source of information for the lighting community. The 2010 LS-Symposium was a combined conference with the White LED Conference in order to enhance the scope of this conference series towards new light source technologies such as LEDs and OLEDs, and this co-operation will be continued in the future. Given the faster technology development in these areas it was also decided to shorten the interval between conferences from three to two years. Well over 200 invited presentations, landmark presentations and poster contributions were presented at the 2010 LS-Symposium. The organizing committee have selected from these a number of outstanding contributions with a high technological content and invited the authors to submit a full paper in JPhysD. The criteria were that the work should not be a repetition of the work already published in the Proceedings, but should be new, complete, within the scope of JPhysD, and meeting the normal quality standards of this journal. After peer review a combined set of 18 papers is published in this JPhysD special issue. In addition, a number of lighting-application-orientated papers will be published in a special issue of Journal of Light & Visual Environment later in 2011. The papers in this special issue of JPhysD show that research in the science and technology of light sources still covers a broad set of subject areas which includes both 'classical

Nitride semiconductor devices fundamentals and applications

CERN Document Server

Morkoç, Hadis

2013-01-01

This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

An Upgrade for the Advanced Light Source

International Nuclear Information System (INIS)

Chemla, Daniel S.; Feinberg, Benedict; Hussain, Zahid; Kirz, Janos; Krebs, Gary F.; Padmore, Howard A.; Robin, David S.; Robinson, Arthur L.; Smith, Neville V.

2004-01-01

One of the first third-generation synchrotron light sources, the ALS, has been operating for almost a decade at Berkeley Lab, where experimenters have been exploiting its high brightness for forefront science. However, accelerator and insertion-device technology have significantly changed since the ALS was designed. As a result, the performance of the ALS is in danger of being eclipsed by that of newer, more advanced sources. The ALS upgrade that we are planning includes full-energy, top-off injection with higher storage-ring current and the replacement of five first-generation insertion devices with nine state-of-the art insertion devices and four new application-specific beamlines now being identified in a strategic planning process. The upgrade will help keep the ALS at the forefront of soft x-ray synchrotron light sources for the next two decades

Passivation of quartz for halogen-containing light sources

Science.gov (United States)

Falkenstein, Zoran

1999-01-01

Lifetime of halogen containing VUV, UV, visible or IR light sources can be extended by passivating the quartz or glass gas containers with halogens prior to filling the quartz with the halogen and rare gas mixtures used to produce the light.

Producing p-type conductivity in self-compensating semiconductor material

International Nuclear Information System (INIS)

Vechten, J.A. van; Woodall, J.M.

1981-01-01

This relates to compound type semiconductor materials that exhibit self-compensated n-type conductivity. The process described imparts p-type conductivity to a body of normally n-conductivity self-compensated compound semiconductor material by bombarding it with charged particles, either electrons, protons or ions. Other possible steps include introducing an acceptor impurity and applying a coating onto the crystal body. This technique will allow new semiconductor structures to be made. For example, there are some compound semiconductor materials that exhibit n-conductivity only that have energy gap widths that would permit electrical to light conversion at frequency and colours not readily achieved in semiconductor devices. (U.K.)

Report of the Basic Energy Sciences Workshop on Compact Light Sources

Energy Technology Data Exchange (ETDEWEB)

Barletta, William A. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Borland, Michael [Argonne National Lab. (ANL), Argonne, IL (United States)

2010-05-11

This report is based on a BES Workshop on Compact Light Sources, held May 11-12, 2010, to evaluated the advantages and disadvantages of compact light source approaches and compared their performance to the third generation storage rings and free-electron lasers. The workshop examined the state of the technology for compact light sources and their expected progress. The workshop evaluated the cost efficiency, user access, availability, and reliability of such sources. Working groups evaluated the advantages and disadvantages of Compact Light Source (CLS) approaches, and compared their performance to the third-generation storage rings and free-electron lasers (FELs). The primary aspects of comparison were 1) cost effectiveness, 2) technical availability v. time frame, and 3) machine reliability and availability for user access. Five categories of potential sources were analyzed: 1) inverse Compton scattering (ICS) sources, 2) mini storage rings, 3) plasma sources, 4) sources using plasma-based accelerators, and 5) laser high harmonic generation (HHG) sources. Compact light sources are not a substitute for large synchrotron and FEL light sources that typically also incorporate extensive user support facilities. Rather they offer attractive, complementary capabilities at a small fraction of the cost and size of large national user facilities. In the far term they may offer the potential for a new paradigm of future national user facility. In the course of the workshop, we identified overarching R&D topics over the next five years that would enhance the performance potential of both compact and large-scale sources: Development of infrared (IR) laser systems delivering kW-class average power with femtosecond pulses at kHz repetition rates. These have application to ICS sources, plasma sources, and HHG sources. Development of laser storage cavities for storage of 10-mJ picosecond and femtosecond pulses focused to micron beam sizes. Development of high-brightness, high

Advanced Light Source Activity Report 2000

International Nuclear Information System (INIS)

Greiner, A.; Moxon, L.; Robinson, A.; Tamura, L.

2001-01-01

This is an annual report, detailing activities at the Advanced Light Source for the year 2000. It includes highlights of scientific research by users of the facility as well as information about the development of the facility itself

Advanced Light Source Activity Report 2000

Energy Technology Data Exchange (ETDEWEB)

Greiner, A.; Moxon, L.; Robinson, A.; Tamura, L.

2001-04-01

This is an annual report, detailing activities at the Advanced Light Source for the year 2000. It includes highlights of scientific research by users of the facility as well as information about the development of the facility itself.

Carrier-phonon interaction in semiconductor quantum dots

Energy Technology Data Exchange (ETDEWEB)

Seebeck, Jan

2009-03-10

In recent years semiconductor quantum dots have been studied extensively due to their wide range of possible applications, predominantly for light sources. For successful applications, efficient carrier scattering processes as well as a detailed understanding of the optical properties are of central importance. The aims of this thesis are theoretical investigations of carrier scattering processes in InGaAs/GaAs quantum dots on a quantum-kinetic basis. A consistent treatment of quasi-particle renormalizations and carrier kinetics for non-equilibrium conditions is presented, using the framework of non-equilibrium Green's functions. The focus of our investigations is the interaction of carriers with LO phonons. Important for the understanding of the scattering mechanism are the corresponding quasi-particle properties. Starting from a detailed study of quantum-dot polarons, scattering and dephasing processes are discussed for different temperature regimes. The inclusion of polaron and memory effects turns out to be essential for the description of the carrier kinetics in quantum-dot systems. They give rise to efficient scattering channels and the obtained results are in agreement with recent experiments. Furthermore, a consistent treatment of the carrier-LO-phonon and the carrier-carrier interaction is presented for the optical response of semiconductor quantum dots, both giving rise to equally important contributions to the dephasing. Beside the conventional GaAs material system, currently GaN based light sources are of high topical interest due to their wide range of possible emission frequencies. In this material additionally intrinsic properties like piezoelectric fields and strong band-mixing effects have to be considered. For the description of the optical properties of InN/GaN quantum dots a procedure is presented, where the material properties obtained from an atomistic tight-binding approach are combined with a many-body theory for non

Single filament semiconductor laser

International Nuclear Information System (INIS)

Botez, D.

1980-01-01

A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

Optimization Design and Simulation of a Multi-Source Energy Harvester Based on Solar and Radioisotope Energy Sources

Directory of Open Access Journals (Sweden)

Hao Li

2016-12-01

Full Text Available A novel multi-source energy harvester based on solar and radioisotope energy sources is designed and simulated in this work. We established the calculation formulas for the short-circuit current and open-circuit voltage, and then studied and analyzed the optimization thickness of the semiconductor, doping concentration, and junction depth with simulation of the transport process of β particles in a semiconductor material using the Monte Carlo simulation program MCNP (version 5, Radiation Safety Information Computational Center, Oak Ridge, TN, USA. In order to improve the efficiency of converting solar light energy into electric power, we adopted PC1D (version 5.9, University of New South Wales, Sydney, Australia to optimize the parameters, and selected the best parameters for converting both the radioisotope energy and solar energy into electricity. The results concluded that the best parameters for the multi-source energy harvester are as follows: Na is 1 × 1019 cm−3, Nd is 3.8 × 1016 cm−3, a PN junction depth of 0.5 μm (using the 147Pm radioisotope source, and so on. Under these parameters, the proposed harvester can achieve a conversion efficiency of 5.05% for the 147Pm radioisotope source (with the activity of 9.25 × 108 Bq and 20.8% for solar light radiation (AM1.5. Such a design and parameters are valuable for some unique micro-power fields, such as applications in space, isolated terrestrial applications, and smart dust in battlefields.

Solution of multi-element LED light sources development automation problem

Science.gov (United States)

Chertov, Aleksandr N.; Gorbunova, Elena V.; Korotaev, Valery V.; Peretyagin, Vladimir S.

2014-09-01

The intensive development of LED technologies resulted in the creation of multicomponent light sources in the form of controlled illumination devices based on usage of mentioned LED technologies. These light sources are used in different areas of production (for example, in the food industry for sorting products or in the textile industry for quality control, etc.). The use of LED lighting products in the devices used in specialized lighting, became possible due to wide range of colors of light, LED structures (which determines the direction of radiation, the spatial distribution and intensity of the radiation, electrical, heat, power and other characteristics), and of course, the possibility of obtaining any shade in a wide dynamic range of brightness values. LED-based lighting devices are notable for the diversity of parameters and characteristics, such as color radiation, location and number of emitters, etc. Although LED technologies have several advantages, however, they require more attention if you need to ensure a certain character of illumination distribution and/or distribution of the color picture at a predetermined distance (for example, at flat surface, work zone, area of analysis or observation). This paper presents software designed for the development of the multicomponent LED light sources. The possibility of obtaining the desired color and energy distribution at the zone of analysis by specifying the spatial parameters of the created multicomponent light source and using of real power, spectral and color parameters and characteristics of the LEDs is shown as well.

Semiconductor photocatalysis principles and applications

CERN Document Server

Kisch, Horst

2014-01-01

Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

Supercontinuum light sources for food analysis

DEFF Research Database (Denmark)

Møller, Uffe Visbech; Petersen, Christian Rosenberg; Kubat, Irnis

2014-01-01

. One track of Light & Food will target the mid-infrared spectral region. To date, the limitations of mid-infraredlight sources, such as thermal emitters, low-power laser diodes, quantum cascade lasers and synchrotron radiation, have precluded mid-IR applications where the spatial coherence, broad...... bandwidth,high brightness and portability of a supercontinuum laser are all required. DTU Fotonik has now demonstrated the first optical fiber based broadband supercontinuum light souce, which covers 1.4-13.3μm and thereby most of the molecular fingerprint region....

Photocatalytic semiconductors synthesis, characterization, and environmental applications

CERN Document Server

Hernández-Ramírez, Aracely

2014-01-01

This critical volume examines the different methods used for the synthesis of a great number of photocatalysts, including TiO2, ZnO and other modified semiconductors, as well as characterization techniques used for determining the optical, structural and morphological properties of the semiconducting materials. Additionally, the authors discuss photoelectrochemical methods for determining the light activity of the photocatalytic semiconductors by means of measurement of properties such as band gap energy, flat band potential and kinetics of hole and electron transfer. Photocatalytic Semiconductors: Synthesis, Characterization and Environmental Applications provide an overview of the semiconductor materials from first- to third-generation photocatalysts and their applications in wastewater treatment and water disinfection. The book further presents economic and toxicological aspects in the production and application of photocatalytic materials.

Visual color matching system based on RGB LED light source

Science.gov (United States)

Sun, Lei; Huang, Qingmei; Feng, Chen; Li, Wei; Wang, Chaofeng

2018-01-01

In order to study the property and performance of LED as RGB primary color light sources on color mixture in visual psychophysical experiments, and to find out the difference between LED light source and traditional light source, a visual color matching experiment system based on LED light sources as RGB primary colors has been built. By simulating traditional experiment of metameric color matching in CIE 1931 RGB color system, it can be used for visual color matching experiments to obtain a set of the spectral tristimulus values which we often call color-matching functions (CMFs). This system consists of three parts: a monochromatic light part using blazed grating, a light mixing part where the summation of 3 LED illuminations are to be visually matched with a monochromatic illumination, and a visual observation part. The three narrow band LEDs used have dominant wavelengths of 640 nm (red), 522 nm (green) and 458 nm (blue) respectively and their intensities can be controlled independently. After the calibration of wavelength and luminance of LED sources with a spectrophotometer, a series of visual color matching experiments have been carried out by 5 observers. The results are compared with those from CIE 1931 RGB color system, and have been used to compute an average locus for the spectral colors in the color triangle, with white at the center. It has been shown that the use of LED is feasible and has the advantages of easy control, good stability and low cost.

The effect of light-activation sources on tooth bleaching

Science.gov (United States)

Baroudi, Kusai; Hassan, Nadia Aly

2014-01-01

Vital bleaching is one of the most requested cosmetic dental procedures asked by patients who seek a more pleasing smile. This procedure consists of carbamide or hydrogen peroxide gel applications that can be applied in-office or by the patient (at-home/overnight bleaching system). Some in-office treatments utilise whitening light with the objective of speeding up the whitening process. The objective of this article is to review and summarise the current literature with regard to the effect of light-activation sources on in-office tooth bleaching. A literature search was conducted using Medline, accessed via the National Library of Medicine Pub Med from 2003 to 2013 searching for articles relating to effectiveness of light activation sources on in-office tooth bleaching. This study found conflicting evidence on whether light truly improve tooth whitening. Other factors such as, type of stain, initial tooth colour and subject age which can influence tooth bleaching outcome were discussed. Conclusions: The use of light activator sources with in-office bleaching treatment of vital teeth did not increase the efficacy of bleaching or accelerate the bleaching. PMID:25298598

Chemical reaction dynamics using the Advanced Light Source

International Nuclear Information System (INIS)

Yang, X.; Blank, D.A.; Heimann, P.A.; Lee, Y.T.; Suits, A.G.; Lin, J.; Wodtke, A.M.

1995-01-01

The recently commissioned Advanced Light Source (ALS) at Berkeley provides a high brightness, tunable VUV light source for chemical dynamics studies. A dedicated chemical dynamics beamline has been built at the ALS for studies of fundamental chemical processes. High flux (10(sup 16) photon/s with 2% bandwidth) VUV synchrotron radiation from 5 to 30 eV can be obtained from the beamline, whose source is the U8/10 undulator. Three endstations will be in operation for studies ranging from crossed beam reaction dynamics and photodissociation to high resolution photoionization dynamics and spectroscopy. A rotatable source crossed molecular beam apparatus (endstation one) has been established for unimolecular and bimolecular reactive scattering studies. Photodissociation of methylamine and ozone were carried out using VUV synchrotron radiation as the ionization detection technique at this endstation. Results show the advantages of the new endstation using VUV ionization as the detection scheme over similar machines using electron bombardment as the ionization source

Chemical reaction dynamics using the Advanced Light Source

International Nuclear Information System (INIS)

Yang, X.; Blank, D.A.; Heimann, P.A.; Lee, Y.T.; Suits, A.G.; Lin, J.; Wodtke, A.M.

1995-09-01

The recently commissioned Advanced Light Source (ALS) at Berkeley provides a high brightness, tunable VUV light source for chemical dynamics studies. A dedicated chemical dynamics beamline has been built at the ALS for studies of fundamental chemical processes. High flux (10 16 photon/s with 2% bandwidth) VUV synchrotron radiation from 5 to 30 eV can be obtained from the beamline, whose source is the U8/10 undulator. Three endstations will be in operation for studies ranging from crossed beam reaction dynamics and photodissociation to high resolution photoionization dynamics and spectroscopy. A rotatable source crossed molecular beam apparatus (endstation one) has been established for unimolecular and bimolecular reactive scattering studies. Photodissociation of methylamine and ozone were carried out using VUV synchrotron radiation as the ionization detection technique at this endstation. Results show the advantages of the new endstation using VUV ionization as the detection scheme over similar machines using electron bombardment as the ionization source

Survey and alignment for the Swiss Light Source

International Nuclear Information System (INIS)

Wei, F.Q.; Dreyer, K.; Fehlmann, U.; Pochon, J.L.; Wrulich, A.

1999-01-01

The Swiss Light Source (SLS) is a dedicated high brightness synchrotron light source currently under construction at the Paul Scherrer Institute (PSI) in Villigen. It will be commissioned in 2001. The accelerator complex includes a 2.4 GeV electron storage ring (SR) with 288 in circumference, a full energy injection booster synchrotron (Booster) and a 100 MeV linear pre-accelerator. The general alignment method and first results of the network measurements are presented. A laser tracker LTD500 is mainly adopted for network measurements and the alignment of storage ring components. (authors)

The Advanced Light Source (ALS) Radiation Safety System

International Nuclear Information System (INIS)

Ritchie, A.; Oldfather, D.; Lindner, A.

1993-05-01

The Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory (LBL) is a 1.5 GeV synchrotron light source facility consisting of a 120 keV electron gun, 50 MeV linear accelerator, 1.5 Gev booster synchrotron, 200 meter circumference electron storage ring, and many photon beamline transport systems for research. The Radiation Safety System for the ALS has been designed and built with a primary goal of providing protection against inadvertent personnel exposure to gamma and neutron radiation and, secondarily, to enhance the electrical safety of select magnet power supplies

Tunable white light source for medical applications

Science.gov (United States)

Blaszczak, Urszula J.; Gryko, Lukasz; Zajac, Andrzej

2017-08-01

Development of light-emitting diodes has brought new possibilities in many applications, especially in terms of flexible adjustment of light spectra. This feature is very useful in construction of many devices, for example for medical diagnosis and treatment. It was proved, that in some cases LEDs can easily replace lasers during therapy of cancer without reduction of efficiency of this process. On the other hand during diagnosis process LED-based constructions can provide unique ability to adjust the color temperature of the output light while maintaining high color rendering. It allows for optimum surface contrast and enhanced tissue differentiation at the operator site. In the paper we describe the construction of the tunable LED-based source designed for application in endoscopy. It was optimized from the point of view of the color rendition for 5 different correlated color temperatures (illuminant A, D55, D65, 3500K and 4500K) with the restriction of very high (>90) values of general and specific color rendering indexes (according to Ra method). The source is composed of 13 light-emitting diodes from visible region mounted on the common radiator and controlled by dedicated system. Spectra of the components are mixed and the spectra of output light is analyzed. On the basis of obtained spectra colorimetric parameters are calculated and compared with the results of theoretical analysis.

Improving the Efficiency of Solid State Light Sources

International Nuclear Information System (INIS)

Joanna McKittrick

2003-01-01

This proposal addresses the national need to develop a high efficiency light source for general illumination applications. The goal is to perform research that would lead to the fabrication of a unique solid state, white-emitting light source. This source is based on an InGaN/GaN UV-emitting chip that activates a luminescent material (phosphor) to produce white light. White-light LEDs are commercially available which use UV from a GaN chip to excite a phosphor suspended in epoxy around the chip. Currently, these devices are relatively inefficient. This research will target one technical barrier that presently limits the efficiency of GaN based devices. Improvements in efficiencies will be achieved by improving the internal conversion efficiency of the LED die, by improving the coupling between the die and phosphor(s) to reduce losses at the surfaces, and by selecting phosphors to maximize the emissions from the LEDs in conversion to white light. The UCSD research team proposes for this project to develop new phosphors that have high quantum efficiencies that can be activated by the UV-blue (360-410 nm) light emitted by the GaN device. The main goal for the UCSD team was to develop new phosphor materials with a very specific property: phosphors that could be excited at long UV-wavelengths (λ=350-410 nm). The photoluminescence of these new phosphors must be activated with photons emitted from GaN based dies. The GaN diodes can be designed to emit UV-light in the same range (λ=350-410 nm). A second objective, which is also very important, is to search for alternate methods to fabricate these phosphors with special emphasis in saving energy and time and reduce pollution

Broadband light source for fiber-optic measurement system in spaceborne applications

Science.gov (United States)

Rößner, Max R.; Müller, Mathias S.; Buck, Thorbjörn C.; Koch, Alexander W.

2012-01-01

Measuring temperatures, mechanical loads and derived quantities precisely and reliably play an important role in spaceflight. With spacecraft becoming increasingly complex, upscaling of present telemetry techniques can become cumbersome. Additionally, there are entirely new sensory requirements, resulting from emerging technologies such as smart structures, active vibration damping and composite material health monitoring. It has been demonstrated in preceding studies that these measurements can be advantageously and efficiently carried out by means of fiber-optic systems. The most prominent fiber-optic strain and temperature sensor is the fiber Bragg grating. Typically, multiple fiber Bragg gratings are used to translate entire temperature and strain fields into an optical wavelength information. For the interrogation of these sensors, a broadband or scanning light source is required. Additional requirements with respect to the light source are high intensity and unpolarized illumination of the gratings. These constraints can be met by a light source that is based on amplified spontaneous emission in a rare-earth-doped fiber. In the presented work, a compact light source, adapted for measurement applications and targeted towards space applications, has been developed. The design of this light source is presented, as well as its implementation. The light source has been designed and tested for selected core aspects of space robustness and the results of these tests are summarized.

Modification of light sources for appropriate biological action

Energy Technology Data Exchange (ETDEWEB)

Kozakov, R; Schoepp, H; Franke, St [Leibniz Institute of Plasma Science and Technology, Felix-Hausdorff-Str. 2, D-17489 Greifswald (Germany); Stoll, C; Kunz, D, E-mail: kozakov@inp-greifswald.d [Charite-Universitymedicine Berlin, Sleep Research and Clinical Chronobiology, Gr. Hamburger Str. 5-11, D-10115 Berlin (Germany)

2010-06-16

The impact of the non-visual action of light on the design of novel light sources is discussed. Therefore possible modifications of lamps dealing with spectral tailoring and their action on melatonin suppression in usual life situations are investigated. The results of melatonin suppression by plasma lamps are presented. It is shown that even short-time exposure to usual light levels in working areas has an influence on the melatonin onset.

In situ calibration of a light source in a sensor device

Science.gov (United States)

Okandan, Murat; Serkland, Darwin k.; Merchant, Bion J.

2015-12-29

A sensor device is described herein, wherein the sensor device includes an optical measurement system, such as an interferometer. The sensor device further includes a low-power light source that is configured to emit an optical signal having a constant wavelength, wherein accuracy of a measurement output by the sensor device is dependent upon the optical signal having the constant wavelength. At least a portion of the optical signal is directed to a vapor cell, the vapor cell including an atomic species that absorbs light having the constant wavelength. A photodetector captures light that exits the vapor cell, and generates an electrical signal that is indicative of intensity of the light that exits the vapor cell. A control circuit controls operation of the light source based upon the electrical signal, such that the light source emits the optical signal with the constant wavelength.

The Use of Light-Emitting Diodes (LEDs) as Green and Red/Far-Red Light Sources in Plant Physiology.

Science.gov (United States)

Jackson, David L.; And Others

1985-01-01

The use of green, red, and far-red light-emitting diodes (LEDs) as light sources for plant physiological studies is outlined and evaluated. Indicates that LED lamps have the advantage over conventional light sources in that they are lightweight, low-cost, portable, easily constructed, and do not require color filters. (Author/DH)

Ultraviolet light and heat source selection in captive spiny-tailed iguanas (Oplurus cuvieri)

International Nuclear Information System (INIS)

Dickinson, H.C.; Fa, J.E.

1997-01-01

Three experimental manipulations were conducted to assess the influence of heat source selection and active thermoregulation on ultraviolet (UV) light exposure in captive spiny-tailed iguanas (Oplurus cuvieri) at the Jersey Wildlife Preservation Trust. Four replicates per manipulation were conducted on six individual lizards. All animals were tested in a separate enclosure to which they were acclimated before observations. Data on choice of thermal sources were collected during the first 2 hr of light, when lizards were actively thermoregulating. Animals were allowed to choose between incandescent light, UV light and a non-light heat source (thermotube) in different combinations. Recorded temperatures close to the incandescent light (37°C) were always significantly higher than at the thermotube (33°C) and at the UV light (29°C). Manipulation 1 offered the animals a choice of an UV light and an incandescent light as thermal sources. Manipulation 2 presented animals with the thermal choices in Manipulation 1, but substrates under each source in Manipulation 1 were switched. In Manipulation 3, animals could choose between an incandescent light and the thermotube. All studied lizards were significantly more attracted to the incandescent light than to the UV light or thermotube. Incandescent light elicited a significantly higher proportion of basking behaviors in all individuals than the other sources. A high proportion of time basking was also spent in front of the thermotube but fewer individuals and less time were spent basking under the UV light. Heat source selection was generally found to be independent of substrate. Management applications of this preference are suggested for juvenile diurnal heliothermic iguanids. (author)

Systematization of efficiency correction for gamma-ray disk sources with semiconductor detectors

International Nuclear Information System (INIS)

Chatani, Hiroshi

1999-01-01

Full energy peak efficiency correction for disk sources has been systematically studied using the mapping method with two high-purity germanium detectors and two low-energy photon spectrometers. The following are found using only single-line (i.e., no coincidence summing loses) γ-rays: (1) The efficiency distributions on a plane parallel to the entrance window of semiconductor detectors is in perfect accord with Gaussian curves inside the circumference of the cylindrical Ge crystal, however, they deviate from the curves outside the circumference. (2) The width parameters of the Gaussian function fitted to the efficiency distributions have a systematic relationship with γ-ray energy. (3) The mapping method is of practical use and has satisfactory accuracy

Centralized light-source optical access network based on polarization multiplexing.

Science.gov (United States)

Grassi, Fulvio; Mora, José; Ortega, Beatriz; Capmany, José

2010-03-01

This paper presents and demonstrates a centralized light source optical access network based on optical polarization multiplexing technique. By using two optical sources emitting light orthogonally polarized in the Central Node for downstream and upstream operations, the Remote Node is kept source-free. EVM values below telecommunication standard requirements have been measured experimentally when bidirectional digital signals have been transmitted over 10 km of SMF employing subcarrier multiplexing technique in the electrical domain.

Theory and simulation of charge transport in disordered organic semiconductors

NARCIS (Netherlands)

Bobbert, P.A.; Kondov, I.; Sutman, G.

2013-01-01

Charge transport in polymeric or small-molecule organic semiconductors used in organic light-emitting diodes (OLEDs) occurs by hopping of charges between sites at which the charges are localized. The energetic disorder in these semiconductors has a profound influence on the charge transport: charges

Where science fiction meets reality? With oxide semiconductors.

Energy Technology Data Exchange (ETDEWEB)

Fortunato, E.; Martins, R. [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, CEMOP-UNINOVA, 2829-516 Caparica (Portugal)

2011-09-15

Transparent electronics is today one of the most advanced topics for a wide range of device applications, where the key components are wide band gap semiconductors, where oxides of different origin play an important role, not only as passive components but also as active components similar to what we observe in conventional semiconductors. As passive components they include the use of these materials as dielectrics for a wide range of electronic devices and also as transparent electrical conductors for use in several optoelectronic applications, such as liquid crystal displays, organic light emitting diodes, solar cells, optical sensors etc. As active materials, they exploit the use of truly electronic semiconductors where the main emphasis is being put on transparent thin film transistors, light emitting diodes, lasers, ultraviolet sensors and integrated circuits among others. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Radiation effects on light sources and detectors

International Nuclear Information System (INIS)

Barnes, C.E.

1985-01-01

The rapidly expanding field of optoelectronics includes a wide variety of both military and non-military applications in which the systems must meet radiation exposure requirements. Herein, we review the work on radiation effects on sources and detectors for such optoelectronic systems. For sources the principal problem is permanent damage-induced light output degradation, while for detectors it is ionizing radiation-induced photocurrents

Optical laser systems at the Linac Coherent Light Source

Energy Technology Data Exchange (ETDEWEB)

Minitti, Michael P.; Robinson, Joseph S.; Coffee, Ryan N.; Edstrom, Steve; Gilevich, Sasha; Glownia, James M.; Granados, Eduardo; Hering, Philippe; Hoffmann, Matthias C.; Miahnahri, Alan; Milathianaki, Despina; Polzin, Wayne; Ratner, Daniel; Tavella, Franz; Vetter, Sharon; Welch, Marc; White, William E.; Fry, Alan R., E-mail: alanfry@slac.stanford.edu [Linac Coherent Light Source, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States)

2015-04-22

This manuscript serves as a reference to describe the optical laser sources and capabilities at the Linac Coherent Light Source. Ultrafast optical lasers play an essential role in exploiting the unique capabilities of recently commissioned X-ray free-electron laser facilities such as the Linac Coherent Light Source (LCLS). Pump–probe experimental techniques reveal ultrafast dynamics in atomic and molecular processes and reveal new insights in chemistry, biology, material science and high-energy-density physics. This manuscript describes the laser systems and experimental methods that enable cutting-edge optical laser/X-ray pump–probe experiments to be performed at LCLS.

The JLab high power ERL light source

International Nuclear Information System (INIS)

Neil, G.R.; Behre, C.; Benson, S.V.

2006-01-01

A new THz/IR/UV photon source at Jefferson Lab is the first of a new generation of light sources based on an Energy-Recovered (superconducting) Linac (ERL). The machine has a 160MeV electron beam and an average current of 10mA in 75MHz repetition rate hundred femtosecond bunches. These electron bunches pass through a magnetic chicane and therefore emit synchrotron radiation. For wavelengths longer than the electron bunch the electrons radiate coherently a broadband THz ∼ half cycle pulse whose average brightness is >5 orders of magnitude higher than synchrotron IR sources. Previous measurements showed 20W of average power extracted [Carr, et al., Nature 420 (2002) 153]. The new facility offers simultaneous synchrotron light from the visible through the FIR along with broadband THz production of 100fs pulses with >200W of average power. The FELs also provide record-breaking laser power [Neil, et al., Phys. Rev. Lett. 84 (2000) 662]: up to 10kW of average power in the IR from 1 to 14μm in 400fs pulses at up to 74.85MHz repetition rates and soon will produce similar pulses of 300-1000nm light at up to 3kW of average power from the UV FEL. These ultrashort pulses are ideal for maximizing the interaction with material surfaces. The optical beams are Gaussian with nearly perfect beam quality. See www.jlab.org/FEL for details of the operating characteristics; a wide variety of pulse train configurations are feasible from 10ms long at high repetition rates to continuous operation. The THz and IR system has been commissioned. The UV system is to follow in 2005. The light is transported to user laboratories for basic and applied research. Additional lasers synchronized to the FEL are also available. Past activities have included production of carbon nanotubes, studies of vibrational relaxation of interstitial hydrogen in silicon, pulsed laser deposition and ablation, nitriding of metals, and energy flow in proteins. This paper will present the status of the system and

The JLab high power ERL light source

Energy Technology Data Exchange (ETDEWEB)

G.R. Neil; C. Behre; S.V. Benson; M. Bevins; G. Biallas; J. Boyce; J. Coleman; L.A. Dillon-Townes; D. Douglas; H.F. Dylla; R. Evans; A. Grippo; D. Gruber; J. Gubeli; D. Hardy; C. Hernandez-Garcia; K. Jordan; M.J. Kelley; L. Merminga; J. Mammosser; W. Moore; N. Nishimori; E. Pozdeyev; J. Preble; R. Rimmer; Michelle D. Shinn; T. Siggins; C. Tennant; R. Walker; G.P. Williams and S. Zhang

2005-03-19

A new THz/IR/UV photon source at Jefferson Lab is the first of a new generation of light sources based on an Energy-Recovered, (superconducting) Linac (ERL). The machine has a 160 MeV electron beam and an average current of 10 mA in 75 MHz repetition rate hundred femtosecond bunches. These electron bunches pass through a magnetic chicane and therefore emit synchrotron radiation. For wavelengths longer than the electron bunch the electrons radiate coherently a broadband THz {approx} half cycle pulse whose average brightness is > 5 orders of magnitude higher than synchrotron IR sources. Previous measurements showed 20 W of average power extracted[1]. The new facility offers simultaneous synchrotron light from the visible through the FIR along with broadband THz production of 100 fs pulses with >200 W of average power. The FELs also provide record-breaking laser power [2]: up to 10 kW of average power in the IR from 1 to 14 microns in 400 fs pulses at up to 74.85 MHz repetition rates and soon will produce similar pulses of 300-1000 nm light at up to 3 kW of average power from the UV FEL. These ultrashort pulses are ideal for maximizing the interaction with material surfaces. The optical beams are Gaussian with nearly perfect beam quality. See www.jlab.org/FEL for details of the operating characteristics; a wide variety of pulse train configurations are feasible from 10 microseconds long at high repetition rates to continuous operation. The THz and IR system has been commissioned. The UV system is to follow in 2005. The light is transported to user laboratories for basic and applied research. Additional lasers synchronized to the FEL are also available. Past activities have included production of carbon nanotubes, studies of vibrational relaxation of interstitial hydrogen in silicon, pulsed laser deposition and ablation, nitriding of metals, and energy flow in proteins. This paper will present the status of the system and discuss some of the discoveries we have made

Advanced Light Source: Activity report 1993

International Nuclear Information System (INIS)

1994-11-01

The Advanced Light Source (ALS) produces the world's brightest light in the ultraviolet and soft x-ray regions of the spectrum. The first low-energy third-generation synchrotron source in the world, the ALS provides unprecedented opportunities for research in science and technology not possible anywhere else. This year marked the beginning of operations and the start of the user research program at the ALS, which has already produced numerous high quality results. A national user facility located at Lawrence Berkeley Laboratory of the University of California, the ALS is available to researchers from academia, industry, and government laboratories. This report contains the following: (1) director's message; (2) operations overview; (3) user program; (4) users' executive committee; (5) industrial outreach; (6) accelerator operations; (7) beamline control system; (8) insertion devices; (9) experimental systems; (10) beamline engineering; (11) first results from user beamlines; (12) beamlines for 1994--1995; (13) special events; (14) publications; (15) advisory panels; and (16) ALS staff

National Synchrotron Light Source annual report 1988

Energy Technology Data Exchange (ETDEWEB)

Hulbert, S.; Lazarz, N.; Williams, G. (eds.)

1988-01-01

This report discusses the experiment done at the National Synchrotron Light Source. Most experiments discussed involves the use of the x-ray beams to study physical properties of solid materials. (LSP)

Laser-produced plasma-extreme ultraviolet light source for next generation lithography

International Nuclear Information System (INIS)

Nishihara, Katsunobu; Nishimura, Hiroaki; Gamada, Kouhei; Murakami, Masakatsu; Mochizuki, Takayasu; Sasaki, Akira; Sunahara, Atsushi

2005-01-01

Extreme ultraviolet (EUV) lithography is the most promising candidate for the next generation lithography for the 45 nm technology node and below. EUV light sources under consideration use 13.5 nm radiations from multicharged xenon, tin and lithium ions, because Mo/Si multiplayer mirrors have high reflectivity at this wavelength. A review of laser-produced plasma (LPP) EUV light sources is presented with a focus on theoretical and experimental studies under the auspices of the Leading Project promoted by MEXT. We discuss three theoretical topics: atomic processes in the LPP-EUV light source, conversion efficiency from laser light to EUV light at 13.5 nm wave-length with 2% bound width, and fast ion spectra. The properties of EUV emission from tin and xenon plasmas are also shown based on experimental results. (author)

Paul Scherrer Institute Scientific Report 1998. Volume VII: Swiss Light Source

International Nuclear Information System (INIS)

Weyer, Heinz Josef; Bugmann, Marlen; Neuhaus, Sibylle

1999-01-01

The Swiss Light Source (SLS) is a medium energy range light source that also provides light with high brilliance in the regime of hard X-rays. It is being constructed at PSI and scheduled to be operational in 2001. A series of new features that were adopted for the design and operation of this machine, is described in this annual report for 1998

Use of gaseous tritium light sources (Beta lights) with respect to nocturnal illumination

International Nuclear Information System (INIS)

Solomon, D.E.

1988-01-01

A number/letter plate for use in, for example darkened buildings has spaced apart gaseous tritium light sources (beta lights) arranged centrally along the indicia on a reflective background sealed in clear translucent plastics. Uses include house numbers, name plates, telephone numbers, notices, product advertisements, vehicle registration plates and names or trade marks on products. (author)

Environmental Science Program at the Advanced Light Source

Energy Technology Data Exchange (ETDEWEB)

Nico, Peter; A; Anastasio, Cort; Dodge, Cleveland; Fendorf, Scott; Francis, A.J.; Hubbard, Susan; Shuh, David; Tomutsa, Liviu; Tufano, Kate; Tyliszczak, Tolek; Werner, Michelle; Williams, Ken

2006-04-05

The Advanced Light Source (ALS) has a variety of capabilities that are applicable to very different types of environmental systems. Shown are the basic descriptions of four of the approximately 35 beam lines at the ALS. The complimentary capabilities of these four beam lines allow for investigations that range from a spatial scale of a few nanometers to several millimeters. The Environmental Science Program at the Advanced Light Source seeks to promote and assist environmental research, particularly on the four beam lines described in this report. Several short examples of the types of research conducted on these beam lines are also described.

Directional Scattering of Semiconductor Nanoparticles Embedded in a Liquid Crystal

Directory of Open Access Journals (Sweden)

Braulio García-Cámara

2014-04-01

Full Text Available Light scattering by semiconductor nanoparticles has been shown to be more complex than was believed until now. Both electric and magnetic responses emerge in the visible range. In addition, directional effects on light scattering of these nanoparticles were recently obtained. In particular, zero backward and minimum-forward scattering are observed. These phenomena are very interesting for several applications such as, for instance, optical switches or modulators. The strong dependence of these phenomena on the properties of both the particle and the surrounding medium can be used to tune them. The electrical control on the optical properties of liquid crystals could be used to control the directional effects of embedded semiconductor nanoparticles. In this work, we theoretically analyze the effects on the directional distribution of light scattering by these particles when the refractive index of a surrounded liquid crystal changes from the ordinary to the extraordinary configuration. Several semiconductor materials and liquid crystals are studied in order to optimize the contrast between the two states.

Behavior of Layers under Different Light Sources

Directory of Open Access Journals (Sweden)

BO Tavares

2015-12-01

Full Text Available ABSTRACT Light is an important factor in the management of laying poultry. The ideal lamp spectrum that provides the best welfare conditions still needs to be determined. Wavelength and light intensity influence poultry behavior and their welfare. This study evaluated the influence of four lamps types with different light spectra on the behavior of seventy 52-week laying hens. Incandescent, fluorescent, and sodium and mercury vapor lamps were set in a different poultry house each and supplied similar light intensities. Layer behavior was video-recorded three times weekly using video cameras installed on the ceiling. The effects of different wavelengths emitted by the light sources on layer behavior were evaluated by the Kruskal-Wallis median test. Results indicated that incandescent and sodium vapor lamps increased the occurrence of nesting, and of active behaviors, such as floor-scratching and pecking.

Imaging spectroscopic analysis at the Advanced Light Source

International Nuclear Information System (INIS)

MacDowell, A. A.; Warwick, T.; Anders, S.; Lamble, G.M.; Martin, M.C.; McKinney, W.R.; Padmore, H.A.

1999-01-01

One of the major advances at the high brightness third generation synchrotrons is the dramatic improvement of imaging capability. There is a large multi-disciplinary effort underway at the ALS to develop imaging X-ray, UV and Infra-red spectroscopic analysis on a spatial scale from. a few microns to 10nm. These developments make use of light that varies in energy from 6meV to 15KeV. Imaging and spectroscopy are finding applications in surface science, bulk materials analysis, semiconductor structures, particulate contaminants, magnetic thin films, biology and environmental science. This article is an overview and status report from the developers of some of these techniques at the ALS. The following table lists all the currently available microscopes at the. ALS. This article will describe some of the microscopes and some of the early applications

Permanent magnet based dipole magnets for next generation light sources

Directory of Open Access Journals (Sweden)

Takahiro Watanabe

2017-07-01

Full Text Available We have developed permanent magnet based dipole magnets for the next generation light sources. Permanent magnets are advantageous over electromagnets in that they consume less power, are physically more compact, and there is a less risk of power supply failure. However, experience with electromagnets and permanent magnets in the field of accelerators shows that there are still challenges to replacing main magnets of accelerators for light sources with permanent magnets. These include the adjustability of the magnetic field, the temperature dependence of permanent magnets, and the issue of demagnetization. In this paper, we present a design for magnets for future light sources, supported by experimental and numerical results.

Special Issue on advanced and emerging light sources

NARCIS (Netherlands)

Haverlag, M.; Kroesen, G.M.W.; Ferguson, I.

2011-01-01

EDITORIAL The papers in this special issue of Journal of Physics D: Applied Physics (JPhysD) originate from the 12th International Symposium on the Science and Technology of Light Sources and the 3rd International Conference on White LEDs and Solid State Lighting, held 11–16 July 2010 at Eindhoven

Systematical and statistical errors in using reference light sources to calibrate TLD readers

International Nuclear Information System (INIS)

Burgkhardt, B.; Piesch, E.

1981-01-01

Three light sources, namely an NaI(Tl) scintillator + Ra, an NaI(Tl) scintillator + 14 C and a plastic scintillator + 14 C, were used during a period of 24 months for a daily check of two TLD readers: the Harshaw 2000 A + B and the Toledo 651. On the basis of light source measurements long-term changes and day-to-day fluctuations of the reader response were investigated. Systematical changes of the Toledo reader response of up to 6% during a working week are explained by nitrogen effects in the plastic scintillator light source. It was found that the temperature coefficient of the light source intensity was -0.05%/ 0 C for the plastic scintillator and -0.3%/ 0 C for the NaI(Tl) scintillator. The 210 Pb content in the Ra activated NaI(Tl) scintillator caused a time-dependent decrease in light source intensity of 3%/yr for the light source in the Harshaw reader. The internal light sources revealed a relative standard deviation of 0.5% for the Toledo reader and the Harshaw reader after respective reading times of 0.45 and 100 sec. (author)

Impact of slow-light enhancement on optical propagation in active semiconductor photonic crystal waveguides

DEFF Research Database (Denmark)

Chen, Yaohui; de Lasson, Jakob Rosenkrantz; Gregersen, Niels

2015-01-01

We derive and validate a set of coupled Bloch wave equations for analyzing the reflection and transmission properties of active semiconductor photonic crystal waveguides. In such devices, slow-light propagation can be used to enhance the material gain per unit length, enabling, for example......, the realization of short optical amplifiers compatible with photonic integration. The coupled wave analysis is compared to numerical approaches based on the Fourier modal method and a frequency domain finite element technique. The presence of material gain leads to the build-up of a backscattered field, which...... is interpreted as distributed feedback effects or reflection at passive-active interfaces, depending on the approach taken. For very large material gain values, the band structure of the waveguide is perturbed, and deviations from the simple coupled Bloch wave model are found....

Organic semiconductors in sensor applications

CERN Document Server

Malliaras, George; Owens, Róisín

2008-01-01

Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

AutoLens: Automated Modeling of a Strong Lens's Light, Mass and Source

Science.gov (United States)

Nightingale, J. W.; Dye, S.; Massey, Richard J.

2018-05-01

This work presents AutoLens, the first entirely automated modeling suite for the analysis of galaxy-scale strong gravitational lenses. AutoLens simultaneously models the lens galaxy's light and mass whilst reconstructing the extended source galaxy on an adaptive pixel-grid. The method's approach to source-plane discretization is amorphous, adapting its clustering and regularization to the intrinsic properties of the lensed source. The lens's light is fitted using a superposition of Sersic functions, allowing AutoLens to cleanly deblend its light from the source. Single component mass models representing the lens's total mass density profile are demonstrated, which in conjunction with light modeling can detect central images using a centrally cored profile. Decomposed mass modeling is also shown, which can fully decouple a lens's light and dark matter and determine whether the two component are geometrically aligned. The complexity of the light and mass models are automatically chosen via Bayesian model comparison. These steps form AutoLens's automated analysis pipeline, such that all results in this work are generated without any user-intervention. This is rigorously tested on a large suite of simulated images, assessing its performance on a broad range of lens profiles, source morphologies and lensing geometries. The method's performance is excellent, with accurate light, mass and source profiles inferred for data sets representative of both existing Hubble imaging and future Euclid wide-field observations.

Penning plasma based simultaneous light emission source of visible and VUV lights

Energy Technology Data Exchange (ETDEWEB)

Vyas, G. L., E-mail: glvyas27@gmail.com [Manipal University Jaipur (India); Prakash, R.; Pal, U. N. [CSIR-Central Electronics and Engineering Research Institute, Microwave Tubes Division (India); Manchanda, R. [Institute for Plasma Research (India); Halder, N. [Manipal University Jaipur (India)

2016-06-15

In this paper, a laboratory-based penning plasma discharge source is reported which has been developed in two anode configurations and is able to produce visible and VUV lights simultaneously. The developed source has simultaneous diagnostics facility using Langmuir probe and optical emission spectroscopy. The two anode configurations, namely, double ring and rectangular configurations, have been studied and compared for optimum use of the geometry for efficient light emissions and recording. The plasma is produced using helium gas and admixture of three noble gases including helium, neon, and argon. The source is capable to produce eight spectral lines for pure helium in the VUV range from 20 to 60 nm and total 24 spectral lines covering the wavelength range 20–106 nm for the admixture of gases. The large range of VUV lines is generated from gaseous admixture rather from the sputtered materials. The recorded spectrum shows that the plasma light radiations in both visible and VUV range are larger in double ring configuration than that of the rectangular configurations at the same discharge operating conditions. To clearly understand the difference, the imaging of the discharge using ICCD camera and particle-in-cell simulation using VORPAL have also been carried out. The effect of ion diffusion, metastable collision with the anode wall and the nonlinear effects are correlated to explain the results.

A novel method for detecting light source for digital images forensic

Science.gov (United States)

Roy, A. K.; Mitra, S. K.; Agrawal, R.

2011-06-01

Manipulation in image has been in practice since centuries. These manipulated images are intended to alter facts — facts of ethics, morality, politics, sex, celebrity or chaos. Image forensic science is used to detect these manipulations in a digital image. There are several standard ways to analyze an image for manipulation. Each one has some limitation. Also very rarely any method tried to capitalize on the way image was taken by the camera. We propose a new method that is based on light and its shade as light and shade are the fundamental input resources that may carry all the information of the image. The proposed method measures the direction of light source and uses the light based technique for identification of any intentional partial manipulation in the said digital image. The method is tested for known manipulated images to correctly identify the light sources. The light source of an image is measured in terms of angle. The experimental results show the robustness of the methodology.

Paul Scherrer Institute Scientific Report 1998. Volume VII: Swiss Light Source

Energy Technology Data Exchange (ETDEWEB)

Weyer, Heinz Josef; Bugmann, Marlen; Neuhaus, Sibylle [eds.

1999-09-01

The Swiss Light Source (SLS) is a medium energy range light source that also provides light with high brilliance in the regime of hard X-rays. It is being constructed at PSI and scheduled to be operational in 2001. A series of new features that were adopted for the design and operation of this machine, is described in this annual report for 1998 figs., tabs., refs.

On-demand semiconductor single-photon source with near-unity indistinguishability.

Science.gov (United States)

He, Yu-Ming; He, Yu; Wei, Yu-Jia; Wu, Dian; Atatüre, Mete; Schneider, Christian; Höfling, Sven; Kamp, Martin; Lu, Chao-Yang; Pan, Jian-Wei

2013-03-01

Single-photon sources based on semiconductor quantum dots offer distinct advantages for quantum information, including a scalable solid-state platform, ultrabrightness and interconnectivity with matter qubits. A key prerequisite for their use in optical quantum computing and solid-state networks is a high level of efficiency and indistinguishability. Pulsed resonance fluorescence has been anticipated as the optimum condition for the deterministic generation of high-quality photons with vanishing effects of dephasing. Here, we generate pulsed single photons on demand from a single, microcavity-embedded quantum dot under s-shell excitation with 3 ps laser pulses. The π pulse-excited resonance-fluorescence photons have less than 0.3% background contribution and a vanishing two-photon emission probability. Non-postselective Hong-Ou-Mandel interference between two successively emitted photons is observed with a visibility of 0.97(2), comparable to trapped atoms and ions. Two single photons are further used to implement a high-fidelity quantum controlled-NOT gate.

Microscopic theory of photon-correlation spectroscopy in strong-coupling semiconductors

Energy Technology Data Exchange (ETDEWEB)

Schneebeli, Lukas

2009-11-27

While many quantum-optical phenomena are already well established in the atomic systems, like the photon antibunching, squeezing, Bose-Einstein condensation, teleportation, the quantum-optical investigations in semiconductors are still at their beginning. The fascinating results observed in the atomic systems inspire physicists to demonstrate similar quantum-optical effects also in the semiconductor systems. In contrast to quantum optics with dilute atomic gases, the semiconductors exhibit a complicated many-body problem which is dominated by the Coulomb interaction between the electrons and holes and by coupling with the semiconductor environment. This makes the experimental observation of similar quantum-optical effects in semiconductors demanding. However, there are already experiments which have verified nonclassical effects in semiconductors. In particular, experiments have demonstrated that semiconductor quantum dots (QDs) can exhibit the single-photon emission and generation of polarization-entangled photon pairs. In fact, both atom and QD systems, embedded within a microcavity, have become versatile platforms where one can perform systematic quantum-optics investigations as well as development work toward quantum-information applications. Another interesting field is the strong-coupling regime in which the light-matter coupling exceeds both the decoherence rate of the atom or QD and the cavity resulting in a reversible dynamics between light and matter excitations. In the strong-coupling regime, the Jaynes-Cummings ladder is predicted and shows a photon-number dependent splitting of the new dressed strong-coupling states which are the polariton states of the coupled light-matter system. Although the semiclassical effect of the vacuum Rabi splitting has already been observed in QDs, the verification of the quantum-mechanical Jaynes-Cummings splitting is still missing mainly due to the dephasing. Clearly, the observation of the Jaynes-Cummings ladder in QDs

A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers

KAUST Repository

Pu, Jiang; Fujimoto, Taiyo; Ohasi, Yuki; Kimura, Shota; Chen, Chang-Hsiao; Li, Lain-Jong; Sakanoue, Tomo; Takenobu, Taishi

2017-01-01

The light-emitting device is the primary device for current light sources. In principle, conventional light-emitting devices need heterostructures and/or intentional carrier doping to form a p-n junction. This junction formation is, however, very

NICE3 SO3 Cleaning Process in Semiconductor Manufacturing

International Nuclear Information System (INIS)

Blazek, Steve

1999-01-01

This fact sheet explains how Anon, Inc., has developed a novel method of removing photoresist--a light-sensitive material used to produce semiconductor wafers for computers--from the computer manufacturing process at reduced cost and greater efficiency. The new technology is technically superior to existing semiconductor cleaning methods and results in reduced use of hazardous chemicals

Chiral Plasmonic Nanostructures Fabricated by Circularly Polarized Light.

Science.gov (United States)

Saito, Koichiro; Tatsuma, Tetsu

2018-05-09

The chirality of materials results in a wide variety of advanced technologies including image display, data storage, light management including negative refraction, and enantioselective catalysis and sensing. Here, we introduce chirality to plasmonic nanostructures by using circularly polarized light as the sole chiral source for the first time. Gold nanocuboids as precursors on a semiconductor were irradiated with circularly polarized light to localize electric fields at specific corners of the cuboids depending on the handedness of light and deposited dielectric moieties as electron oscillation boosters by the localized electric field. Thus, plasmonic nanostructures with high chirality were developed. The present bottom-up method would allow the large-scale and cost-effective fabrication of chiral materials and further applications to functional materials and devices.

Light Source Estimation with Analytical Path-tracing

OpenAIRE

Kasper, Mike; Keivan, Nima; Sibley, Gabe; Heckman, Christoffer

2017-01-01

We present a novel algorithm for light source estimation in scenes reconstructed with a RGB-D camera based on an analytically-derived formulation of path-tracing. Our algorithm traces the reconstructed scene with a custom path-tracer and computes the analytical derivatives of the light transport equation from principles in optics. These derivatives are then used to perform gradient descent, minimizing the photometric error between one or more captured reference images and renders of our curre...

Salient features in the preparation of gaseous tritium filled luminous light sources

International Nuclear Information System (INIS)

Mathew, K.M.; Ravi, S.; Subramanian, T.K.; Ananthakrishnan, M.

2003-01-01

Beta radiation emanating from gaseous tritium in close proximity with copper activated zinc sulphide phosphor provides self sustained light sources and these sources are used for nocturnal illumination of liquid crystal display in digital watches and clocks, product advertisements, exit signs etc. We report herein the preparation of low specific radioactivity gaseous tritium (29.5 Ci/m mole; 1.09 TBq/m mole) filled light sources and its effect on light output. (author)

Microscopic modeling of photoluminescence of strongly disordered semiconductors

International Nuclear Information System (INIS)

Bozsoki, P.; Kira, M.; Hoyer, W.; Meier, T.; Varga, I.; Thomas, P.; Koch, S.W.

2007-01-01

A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Chiao-Wen Yeh

2010-03-01

Full Text Available White light-emitting diodes (WLEDs have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV LEDs and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED or polymer light-emitting diode (PLED, have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450-480 nm and nUV (380-400 nm LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+ is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Science.gov (United States)

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

High gradient accelerators for linear light sources

International Nuclear Information System (INIS)

Barletta, W.A.

1988-01-01

Ultra-high gradient radio frequency linacs powered by relativistic klystrons appear to be able to provide compact sources of radiation at XUV and soft x-ray wavelengths with a duration of 1 picosecond or less. This paper provides a tutorial review of the physics applicable to scaling the present experience of the accelerator community to the regime applicable to compact linear light sources. 22 refs., 11 figs., 21 tabs

The Advanced Light Source (ALS) Radiation Safety System

International Nuclear Information System (INIS)

Ritchie, A.L.; Oldfather, D.E.; Lindner, A.F.

1993-08-01

The Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory (LBL) is a 1.5 Gev synchrotron light source facility consisting of a 120 kev electron gun, 50 Mev linear accelerator, 1.5 Gev booster synchrotron, 200 meter circumference electron storage ring, and many photon beamline transport systems for research. Figure 1. ALS floor plan. Pairs of neutron and gamma radiation monitors are shown as dots numbered from 1 to 12. The Radiation Safety System for the ALS has been designed and built with a primary goal of providing protection against inadvertent personnel exposure to gamma and neutron radiation and, secondarily, to enhance the electrical safety of select magnet power supplies

Dynamic Aperture Measurements at the Advanced Light Source

International Nuclear Information System (INIS)

Decking, W.; Robin, D.

1999-01-01

A large dynamic aperture for a storage ring is of importance for long lifetimes and a high injection efficiency. Measurements of the dynamic aperture of the third generation synchrotron light source Advanced Light Source (ALS) using beam excitation with kicker magnets are presented. The experiments were done for various accelerator conditions, allowing us to investigate the influence of different working points, chromaticities, insertion devices, etc.. The results are compared both with tracking calculations and a simple model for the dynamic aperture yielding good agreements. This gives us confidence in the predictability of the nonlinear accelerator model. This is especially important for future ALS upgrades as well as new storage ring designs

Photonic Switching Devices Using Light Bullets

Science.gov (United States)

Goorjian, Peter M. (Inventor)

1999-01-01

A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

X-ray detectors at the Linac Coherent Light Source

International Nuclear Information System (INIS)

Blaj, Gabriel; Caragiulo, Pietro; Carini, Gabriella; Carron, Sebastian; Dragone, Angelo; Freytag, Dietrich; Haller, Gunther; Hart, Philip; Hasi, Jasmine; Herbst, Ryan; Herrmann, Sven; Kenney, Chris; Markovic, Bojan; Nishimura, Kurtis; Osier, Shawn; Pines, Jack; Reese, Benjamin; Segal, Julie; Tomada, Astrid; Weaver, Matt

2015-01-01

This paper offers an overview of area detectors developed for use at the Linac Coherent Light Source (LCLS) with particular emphasis on their impact on science. The experimental needs leading to the development of second-generation cameras for LCLS are discussed and the new detector prototypes are presented. Free-electron lasers (FELs) present new challenges for camera development compared with conventional light sources. At SLAC a variety of technologies are being used to match the demands of the Linac Coherent Light Source (LCLS) and to support a wide range of scientific applications. In this paper an overview of X-ray detector design requirements at FELs is presented and the various cameras in use at SLAC are described for the benefit of users planning experiments or analysts looking at data. Features and operation of the CSPAD camera, which is currently deployed at LCLS, are discussed, and the ePix family, a new generation of cameras under development at SLAC, is introduced

Mechanisms of current flow in metal-semiconductor ohmic contacts

International Nuclear Information System (INIS)

Blank, T. V.; Gol'dberg, Yu. A.

2007-01-01

Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

Does the light source affect the repairability of composite resins?

Science.gov (United States)

Karaman, Emel; Gönülol, Nihan

2014-01-01

The aim of this study was to examine the effect of the light source on the microshear bond strength of different composite resins repaired with the same substrate. Thirty cylindrical specimens of each composite resin--Filtek Silorane, Filtek Z550 (3M ESPE), Gradia Direct Anterior (GC), and Aelite Posterior (BISCO)--were prepared and light-cured with a QTH light curing unit (LCU). The specimens were aged by thermal cycling and divided into three subgroups according to the light source used--QTH, LED, or PAC (n = 10). They were repaired with the same substrate and a Clearfil Repair Kit (Kuraray). The specimens were light-cured and aged for 1 week in distilled water at 37 °C. The microshear bond strength and failure modes were assessed. There was no significant difference in the microshear bond strength values among the composite resins, except for the Filtek Silorane group that showed significantly lower bond strength values when polymerized with the PAC unit compared to the QTH or LED unit. In conclusion, previously placed dimethacrylate-based composites can be repaired with different light sources; however, if the composite to be repaired is silorane-based, then using a QTH or LED device may be the best option.

New lasers and light sources - old and new risks?

DEFF Research Database (Denmark)

Paasch, Uwe; Schwandt, Antje; Seeber, Nikolaus

2017-01-01

Recent developments (new wavelengths, treatment concepts, and combinations) in the field of lasers, intense pulsed light (IPL), LED, as well as new energy and light sources have opened up new therapeutic options that extend beyond mere aesthetic indications. Thus, while fractional lasers used...

Swiss synchrotron light source at the Paul Scherrer Institute at Villigen

International Nuclear Information System (INIS)

1996-02-01

The brochure describes the Swiss project for a synchrotron light source to be built at the Paul Scherrer Institute at Villigen. According to the project the synchrotron light source shall be realized up to the year 2001 at costs of 165 Million Swiss Francs. figs., tabs

Thiazole-based organic semiconductors for organic electronics.

Science.gov (United States)

Lin, Yuze; Fan, Haijun; Li, Yongfang; Zhan, Xiaowei

2012-06-19

Over the past two decades, organic semiconductors have been the subject of intensive academic and commercial interests. Thiazole is a common electron-accepting heterocycle due to electron-withdrawing nitrogen of imine (C=N), several moieties based on thiazole have been widely introduced into organic semiconductors, and yielded high performance in organic electronic devices. This article reviews recent developments in the area of thiazole-based organic semiconductors, particularly thiazole, bithiazole, thiazolothiazole and benzobisthiazole-based small molecules and polymers, for applications in organic field-effect transistors, solar cells and light-emitting diodes. The remaining problems and challenges, and the key research direction in near future are discussed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrowetting on semiconductors

Science.gov (United States)

Palma, Cesar; Deegan, Robert

2015-01-01

Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

The Pre-Injector Linac for the Diamond Light Source

CERN Document Server

Christou, C

2004-01-01

The Diamond Light Source is a new medium-energy high brightness synchrotron light facility which is under construction on the Rutherford Appleton Laboratory site in the U.K. The accelerator facility can be divided into three major components; a 3 GeV 561 m circumference storage ring, a full-energy booster synchrotron and a 100 MeV pre-injector linac. This paper describes the linac design and plans for operation. The linac is supplied by ACCEL Instruments GmbH under a turn-key contract, with Diamond Light Source Ltd. providing linac beam diagnostics, control system hardware and standard vacuum components. Commissioning of the linac will take place in early 2005 and user operation of the facility will commence in 2007.

New lasers and light sources - old and new risks?

DEFF Research Database (Denmark)

Paasch, Uwe; Schwandt, Antje; Seeber, Nikolaus

2017-01-01

Recent developments (new wavelengths, treatment concepts, and combinations) in the field of lasers, intense pulsed light (IPL), LED, as well as new energy and light sources have opened up new therapeutic options that extend beyond mere aesthetic indications. Thus, while fractional lasers used to ...

Stimulated secondary emission from semiconductor microcavities

DEFF Research Database (Denmark)

Østergaard, John Erland; Mizeikis, V.; Langbein, Wolfgang Werner

2001-01-01

We find strong influence of final-state stimulation on the time-resolved light emission dynamics from semiconductor microcavities after pulsed excitation allowing angle-resonant polariton-polariton scattering on the lower-polariton branch. The polariton dynamics can be controlled by injection...

Plasma-based EUV light source

Science.gov (United States)

Shumlak, Uri; Golingo, Raymond; Nelson, Brian A.

2010-11-02

Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

Light energy conversion by photocatalytic reaction

Energy Technology Data Exchange (ETDEWEB)

Fujishima, Akira; Yamagata, Sadamu [Univ. of Tokyo (Japan)

1989-01-01

The photocatalytic reaction, to be made to a suspended semiconductor powder system, was explained in summary. By using semiconductor as an electrode for the electrolyzation, etc. and projecting light on it to generate photoelectromotive force, a photocell can be composed. eg., by composing titanium oxide electrode, n-type semiconductor and platinum electrode, and irradiating light on the former electrode to generate electric current, oxygen and hydrogen are produced from the titanium oxide electrode and platinum electrode, respectively, which means the possibility of obtainment of clean energy from water as raw material. Such a wet type photocell, easy to produce, is active also in research. With white titanium oxide powder being suspended in water solution, hydrogen is produced by projecting light into it. Such a semiconductor is called photocatalyst, in which the research has been widely developed, mainly by taking notice of the hydrogen production on reduction side, since 1972. The photocatalysis using colloid and, differently, that doing heteropolyacid are also taken notice of. 24 refs., 6 figs.

An optically stabilized fast-switching light emitting diode as a light source for functional neuroimaging.

Directory of Open Access Journals (Sweden)

Daniel A Wagenaar

Full Text Available Neuroscience research increasingly relies on optical methods for evoking neuronal activity as well as for measuring it, making bright and stable light sources critical building blocks of modern experimental setups. This paper presents a method to control the brightness of a high-power light emitting diode (LED light source to an unprecedented level of stability. By continuously monitoring the actual light output of the LED with a photodiode and feeding the result back to the LED's driver by way of a proportional-integral controller, drift was reduced to as little as 0.007% per hour over a 12-h period, and short-term fluctuations to 0.005% root-mean-square over 10 seconds. The LED can be switched on and off completely within 100 μs, a feature that is crucial when visual stimuli and light for optical recording need to be interleaved to obtain artifact-free recordings. The utility of the system is demonstrated by recording visual responses in the central nervous system of the medicinal leech Hirudo verbana using voltage-sensitive dyes.

Semiconductor relay and its manufacture method. Handotai relay oyobi sono seizo hoho

Energy Technology Data Exchange (ETDEWEB)

Nakamura, M

1993-06-01

The invention relates to a semiconductor relay in which a light emitting diode and a photovoltaic element are arranged in the opposite positions and connected with a light connection and aims to present a light transmission path to transmit input signals to the light emitting diode to the side of the photovoltaic element with a negligible light loss effectively. The invention presents a semiconductor relay, in which a light emitting diode loaded on the first lead frame and the light receiving part of the photovoltaic element to drive a MOSFET element loaded on the second lead frame and acting as a switch element are connected through an insulator tube with an opaque outer wall, and the interior of the insulator tube is filled with a transparent insulating filler, so that the invention affords a light transmission path without light leakage from the interior of the opaque insulator tube and with the stability in the form and no light loss. 3 figs.

Data format standard for sharing light source measurements

Science.gov (United States)

Gregory, G. Groot; Ashdown, Ian; Brandenburg, Willi; Chabaud, Dominique; Dross, Oliver; Gangadhara, Sanjay; Garcia, Kevin; Gauvin, Michael; Hansen, Dirk; Haraguchi, Kei; Hasna, Günther; Jiao, Jianzhong; Kelley, Ryan; Koshel, John; Muschaweck, Julius

2013-09-01

Optical design requires accurate characterization of light sources for computer aided design (CAD) software. Various methods have been used to model sources, from accurate physical models to measurement of light output. It has become common practice for designers to include measured source data for design simulations. Typically, a measured source will contain rays which sample the output distribution of the source. The ray data must then be exported to various formats suitable for import into optical analysis or design software. Source manufacturers are also making measurements of their products and supplying CAD models along with ray data sets for designers. The increasing availability of data has been beneficial to the design community but has caused a large expansion in storage needs for the source manufacturers since each software program uses a unique format to describe the source distribution. In 2012, the Illuminating Engineering Society (IES) formed a working group to understand the data requirements for ray data and recommend a standard file format. The working group included representatives from software companies supplying the analysis and design tools, source measurement companies providing metrology, source manufacturers creating the data and users from the design community. Within one year the working group proposed a file format which was recently approved by the IES for publication as TM-25. This paper will discuss the process used to define the proposed format, highlight some of the significant decisions leading to the format and list the data to be included in the first version of the standard.

Semiconductor wire array structures, and solar cells and photodetectors based on such structures

Science.gov (United States)

Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

2014-08-19

A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

Gain and Index Dynamics in Semiconductor Lasers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher

Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

Science.gov (United States)

Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

2012-08-28

Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis.

Source attribution of light-absorbing impurities in seasonal snow across northern China

Science.gov (United States)

Zhang, R.; Hegg, D. A.; Huang, J.; Fu, Q.

2013-01-01

Seasonal snow samples obtained at 46 sites in 6 provinces of China in January and February 2010 were analyzed for a suite of chemical species and these data are combined with previously determined concentrations of light-absorbing impurities (LAI), including all particles that absorb light in the 650-700 nm wavelength interval. The LAI, together with 14 other analytes, are used as input to a positive matrix factorization (PMF) receptor model to explore the sources of the LAI in the snow. The PMF analysis for the LAI sources is augmented with backward trajectory cluster analysis and the geographic locations of major source areas for the three source types. The two analyses are consistent and indicate that three factors/sources were responsible for the measured snow light absorption: a soil dust source, an industrial pollution source, and a biomass and biofuels burning source. Soil dust was the main source of the LAI, accounting for ~ 53% of the LAI on average.

Optimization of light source parameters in the photodynamic therapy of heterogeneous prostate

International Nuclear Information System (INIS)

Li Jun; Altschuler, Martin D; Hahn, Stephen M; Zhu, Timothy C

2008-01-01

The three-dimensional (3D) heterogeneous distributions of optical properties in a patient prostate can now be measured in vivo. Such data can be used to obtain a more accurate light-fluence kernel. (For specified sources and points, the kernel gives the fluence delivered to a point by a source of unit strength.) In turn, the kernel can be used to solve the inverse problem that determines the source strengths needed to deliver a prescribed photodynamic therapy (PDT) dose (or light-fluence) distribution within the prostate (assuming uniform drug concentration). We have developed and tested computational procedures to use the new heterogeneous data to optimize delivered light-fluence. New problems arise, however, in quickly obtaining an accurate kernel following the insertion of interstitial light sources and data acquisition. (1) The light-fluence kernel must be calculated in 3D and separately for each light source, which increases kernel size. (2) An accurate kernel for light scattering in a heterogeneous medium requires ray tracing and volume partitioning, thus significant calculation time. To address these problems, two different kernels were examined and compared for speed of creation and accuracy of dose. Kernels derived more quickly involve simpler algorithms. Our goal is to achieve optimal dose planning with patient-specific heterogeneous optical data applied through accurate kernels, all within clinical times. The optimization process is restricted to accepting the given (interstitially inserted) sources, and determining the best source strengths with which to obtain a prescribed dose. The Cimmino feasibility algorithm is used for this purpose. The dose distribution and source weights obtained for each kernel are analyzed. In clinical use, optimization will also be performed prior to source insertion to obtain initial source positions, source lengths and source weights, but with the assumption of homogeneous optical properties. For this reason, we compare the

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

A Stroboscopic Light Source for Experiments in Mechanics

Science.gov (United States)

Mayer, V. V.; Varaksina, E. I.

2017-01-01

We propose to attach a small stroboscopic light source to a moving object and connect the source to a pulse generator with the help of insulated thin flexible multi-cored wires. Students can assemble such a device independently in a school laboratory. The device can be used to obtain trajectories with time marks in students' research projects in…

Light Sources and Ballast Circuits

Science.gov (United States)

Yorifuji, Takashi; Sakai, Makoto; Yasuda, Takeo; Maehara, Akiyoshi; Okada, Atsunori; Gouriki, Takeshi; Mannami, Tomoaki

discharge models were reported. Further, studies on ultra high-pressure mercury lamps as light sources for projectors are becoming the mainstream of HID lamp related researches. For high-pressure sodium lamps, many studies on plant growing and pest control utilizing low insect attracting aspects were also reported in 2006. Additionally, for discharge lamps, the minimum sustaining electric power for arc tubes employed in electrode-less compact fluorescent lamps was investigated. For Hg-free rare-gas fluorescent lamps, a luminance of 10,000cd/m2 was attained by a 1 meter-long external duplex spiral electrode prototype using Xe/Ne barrier discharge. As to startup circuits, the commercialization of energy saving and high value added products mainly associated with fluorescent lamps and HID lamps are becoming common. Further, the miniaturization of startup circuits for self electronic-ballasted lamps has advanced. Speaking of the overall light sources and startup circuits in 2006 and with the enforcement of RoHS in Europe in July, the momentum toward hazardous substance-free and energy saving initiatives has been enhanced from the perspective of protecting the global environment. It is anticipated that similar restrictions will be globally enforced in the future.

Light sensors based on organic phototransistors with absorption-enhancing nanoparticles

DEFF Research Database (Denmark)

Runge Walther, Anders; Linnet, Jes; Albrektsen, Ole

Organic semiconductors (OSCs) exhibit promising electronic and optical properties applicable in photo-sensing devices. Previous studies have found that thiophene-based semiconductors are suitable as the active layer in organic optoelectronic devices such as light-sensing transistors [1]. The abil......Organic semiconductors (OSCs) exhibit promising electronic and optical properties applicable in photo-sensing devices. Previous studies have found that thiophene-based semiconductors are suitable as the active layer in organic optoelectronic devices such as light-sensing transistors [1...

The semiconductor doping with radiation defects via proton and alpha-particle irradiation. Review

CERN Document Server

Kozlov, V A

2001-01-01

Paper presents an analytical review devoted to semiconductor doping with radiation defects resulted from irradiation by light ions, in particular, by protons and alpha-particles. One studies formation of radiation defects in silicon, gallium arsenide and indium phosphide under light ion irradiation. One analyzes effect of proton and alpha-particle irradiation on electric conductivity of the above-listed semiconducting materials. Semiconductor doping with radiation defects under light ion irradiation enables to control their electrophysical properties and to design high-speed opto-, micro- and nanoelectronic devices on their basis

Measuring light spectrum as a main indicator of artificial sources quality

Directory of Open Access Journals (Sweden)

Piotr Dąbrowski

2015-05-01

Full Text Available Objective: To compare different artificial light sources in different places where plant breeding is conduced. Methods: Measurements were conducted outdoor, in room, in greenhouse, under four panels with light emitting diodes, in phytotron, in dark room with various light sources and inside Sanyo versatile environmental chamber. The measurements were made by using SpectraPen SP100 (PSI, Czech Republic device. Results: Our result showed that spectrum measured outdoor during sunny day had only one peak at the wavelength of 485 nm (ca. 60000 relative units. On cloudy day, the trend of light spectrum curve was similar, but with lower values. At room conditions, the curve was more flat than outdoor. Under greenhouse conditions, the curve was similar to that measured outdoor. A few additional peaks on the curve appeared by adding high pressure sodium lamp. There were changes of curve under LED panels. Conclusions: It must be underlined that the most similar spectrum curve to daylight light has incandescent bulb and this light source should be preferred as support of daylight in greenhouses and as main source in phytotrons. Using high pressure sodium lamp in greenhouses as support of daylight cause increase in the red/far-red ratio and occurrence of a new peak on spectrum curve. The new possibilities are creating by LED panels with red and blue diodes.

ON THE ARTIFICIAL SEMICONDUCTOR MATERIALS | Adelabu ...

African Journals Online (AJOL)

For about the last three decades, semiconductor technology began to make its most apparent impact in Solid State Electronics. The field of photonics, which combines laser physics, electro-optics and nonlinear optics has expanded tremendously. Notably, modern light wave communications exemplify photonic systems.

Advanced Light Source Activity Report 1997/1998

International Nuclear Information System (INIS)

Greiner, Annette

1999-01-01

This Lawrence Berkeley National Laboratory, Advanced Light Source (ALS) activity report for 1997/98 discusses the following topics: Introduction and Overview; Science Highlights; Facility Report; Special Events; ALS Advisory Panels 1997/98; ALS Staff 1997/98 and Facts and Figures for the year

Advanced Light Source Activity Report 1997/1998

Energy Technology Data Exchange (ETDEWEB)

Greiner, Annette (ed.)

1999-03-01

This Lawrence Berkeley National Laboratory, Advanced Light Source (ALS) activity report for 1997/98 discusses the following topics: Introduction and Overview; Science Highlights; Facility Report; Special Events; ALS Advisory Panels 1997/98; ALS Staff 1997/98 and Facts and Figures for the year.

Compact X-ray Light Source Workshop Report

Energy Technology Data Exchange (ETDEWEB)

Thevuthasan, Suntharampillai; Evans, James E.; Terminello, Louis J.; Koppenaal, David W.; Manke, Kristin L.; Plata, Charity

2012-12-01

This report, produced jointly by EMSL and FCSD, is the result of a workshop held in September 2011 that examined the utility of a compact x-ray light source (CXLS) in addressing many scientific challenges critical to advancing energy science and technology.

Synchrotron light source data book: Version 4, Revision 05/96

International Nuclear Information System (INIS)

Murphy, J.B.

1996-05-01

This book is as its name implies a collection of data on existing and planned synchrotron light sources. The intention was to provide a compendium of tools for the design of electron storage rings as synchrotron radiation sources. The slant is toward the accelerator physicist as other booklets such as the X-Ray Data Booklet address the use of synchrotron radiation. It is hoped that the booklet serves as a pocket sized reference to facilitate back of the envelope type calculations. It contains some useful formulae in practical units and a brief description of many of the existing and planned light source lattices

Synchrotron light source data book: Version 4, Revision 05/96

Energy Technology Data Exchange (ETDEWEB)

Murphy, J.B.

1996-05-01

This book is as its name implies a collection of data on existing and planned synchrotron light sources. The intention was to provide a compendium of tools for the design of electron storage rings as synchrotron radiation sources. The slant is toward the accelerator physicist as other booklets such as the X-Ray Data Booklet address the use of synchrotron radiation. It is hoped that the booklet serves as a pocket sized reference to facilitate back of the envelope type calculations. It contains some useful formulae in practical units and a brief description of many of the existing and planned light source lattices.

Polymer OLED White Light Development Program

Energy Technology Data Exchange (ETDEWEB)

Homer Antoniadis; Vi-En Choong; Stelios Choulis; Brian Cumpston; Rahul Gupta; Mathew Mathai; Michael Moyer; Franky So

2005-12-19

OSRAM Opto Semiconductors (OSRAM) successfully completed development, fabrication and characterization of the large area, polymer based white light OLED prototype at their OLED Research and Development (R&D) facility in San Jose, CA. The program, funded by the Department of Energy (DOE), consisted of three key objectives: (1) Develop new polymer materials and device architectures--in order to improve the performance of organic light emitters. (2) Develop processing techniques--in order to demonstrate and enable the manufacturing of large area, white light and color tunable, solid state light sources. (3) Develop new electronics and driving schemes for organic light sources, including color-tunable light sources. The key performance goals are listed. A world record efficiency of 25 lm/W was established for the solution processed white organic device from the significant improvements made during the project. However, the challenges to transfer this technology from an R&D level to a large tile format such as, the robustness of the device and the coating uniformity of large area panels, remain. In this regard, the purity and the blend nature of the materials are two factors that need to be addressed in future work. During the first year, OSRAM's Materials and Device group (M&D) worked closely with the major polymer material suppliers to develop the polymer emissive technology. M&D was successful in demonstrating a 7-8 lm/W white light source which was based on fluorescent materials. However, it became apparent that the major gains in efficiency could only be made if phosphorescent materials were utilized. Thus, in order to improve the performance of the resulting devices, the focus of the project shifted towards development of solution-processable phosphorescent light emitting diodes (PHOLEDs) and device architectures. The result is a higher efficiency than the outlined project milestone.

Fundamental characteristics of a synthesized light source for optical coherence tomography.

Science.gov (United States)

Sato, Manabu; Wakaki, Ichiro; Watanabe, Yuuki; Tanno, Naohiro

2005-05-01

We describe the fundamental characteristics of a synthesized light source (SLS) consisting of two low-coherence light sources to enhance the spatial resolution for optical coherence tomography (OCT). The axial resolution of OCT is given by half the coherence length of the light source. We fabricated a SLS with a coherence length of 2.3 microm and a side-lobe intensity of 45% with an intensity ratio of LED1:LED2 = 1:0.5 by combining two light sources, LED1, with a central wavelength of 691 nm and a spectral bandwidth of 99 nm, and LED2, with a central wavelength of 882 nm and a spectral bandwidth of 76 nm. The coherence length of 2.3 microm was 56% of the shorter coherence length in the two LEDs, which indicates that the axial resolution is 1.2 microm. The lateral resolution was measured at less than 4.4 microm by use of the phase-shift method and with a test pattern as a sample. The measured rough surfaces of a coin are illustrated and discussed.

Methods of forming semiconductor devices and devices formed using such methods

Science.gov (United States)

Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

2013-05-21

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Progress in ion implantation equipment for semiconductor manufacturing

International Nuclear Information System (INIS)

Kawai, Tadashi; Naito, Masao

1987-01-01

In the semiconductor device manufacturing industry, ion implantation systems are used to dope semiconductor substrates with impurities that act as donor or acceptor. In an ion implantation system, required impurity ions are generated from an ion source, subjected to mass analysis, accelerated, converged and implanted in semiconductor wafers. High-tension arc tends to cause troubles in these systems, but improvement in design increased the average operation rate of medium-power systems from bout 70 percent to 90 percent during the past 10 years. Freeman type ion sources have replaced most RF ion sources and cold cathode PIG sources, which had been widely used until the early 1970s. Many of the recent ion sources are equipped with a P and As vaporizer to increase the beam intensity. By an increased beam intensity or decreased handling time in combination with an automatic handling system, the throughput has reached 330 wafers per hour for 10 second implantation. The yield has increased due to the development of improved scanning methods, vacuum devices such as cryopump, and processes and apparatus that serve for preventing particles from being contained in micro-devices. Various other improvements have been made to permit efficient production. (Nogami, K.)

Boron-Containing Red Light-Emitting Phosphors And Light Sources Incorporating The Same

Science.gov (United States)

Srivastava, Alok Mani; Comanzo, Holly Ann; Manivannan, Venkatesan

2006-03-28

A boron-containing phosphor comprises a material having a formula of AD1-xEuxB9O16, wherein A is an element selected from the group consisting of Ba, Sr, Ca, Mg, and combinations thereof; D is at least an element selected from the group consisting of rare-earth metals other than europium; and x is in the range from about 0.005 to about 0.5. The phosphor is used in a blend with other phosphors in a light source for generating visible light with a high color rendering index.

Project planning workshop 6-GeV synchrotron light source: Volume 1

International Nuclear Information System (INIS)

1986-01-01

A model 6 GeV synchrotron light source is described, and the costs, schedule, and manpower associated with producing such a synthrotron light source are summarized. A program consisting of a two-year pre-construction phase, a five-year construction phase, and a three-year post-construction phase and costing a total of $379.6 million is assumed

The Materials Science beamline upgrade at the Swiss Light Source

Energy Technology Data Exchange (ETDEWEB)

Willmott, P. R., E-mail: philip.willmott@psi.ch; Meister, D.; Leake, S. J.; Lange, M.; Bergamaschi, A. [Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen (Switzerland); and others

2013-07-16

The wiggler X-ray source of the Materials Science beamline at the Swiss Light Source has been replaced with a 14 mm-period cryogenically cooled in-vacuum undulator. In order to best exploit the increased brilliance of this new source, the entire front-end and optics have been redesigned. The Materials Science beamline at the Swiss Light Source has been operational since 2001. In late 2010, the original wiggler source was replaced with a novel insertion device, which allows unprecedented access to high photon energies from an undulator installed in a medium-energy storage ring. In order to best exploit the increased brilliance of this new source, the entire front-end and optics had to be redesigned. In this work, the upgrade of the beamline is described in detail. The tone is didactic, from which it is hoped the reader can adapt the concepts and ideas to his or her needs.

Nanonewton thrust measurement of photon pressure propulsion using semiconductor laser

Science.gov (United States)

Iwami, K.; Akazawa, Taku; Ohtsuka, Tomohiro; Nishida, Hiroyuki; Umeda, Norihiro

2011-09-01

To evaluate the thrust produced by photon pressure emitted from a 100 W class continuous-wave semiconductor laser, a torsion-balance precise thrust stand is designed and tested. Photon emission propulsion using semiconductor light sources attract interests as a possible candidate for deep-space propellant-less propulsion and attitude control system. However, the thrust produced by photon emission as large as several ten nanonewtons requires precise thrust stand. A resonant method is adopted to enhance the sensitivity of the biflier torsional-spring thrust stand. The torsional spring constant and the resonant of the stand is 1.245 × 10-3 Nm/rad and 0.118 Hz, respectively. The experimental results showed good agreement with the theoretical estimation. The thrust efficiency for photon propulsion was also defined. A maximum thrust of 499 nN was produced by the laser with 208 W input power (75 W of optical output) corresponding to a thrust efficiency of 36.7%. The minimum detectable thrust of the stand was estimated to be 2.62 nN under oscillation at a frequency close to resonance.

Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

International Nuclear Information System (INIS)

McPheeters, Claiborne O; Yu, Edward T; Hu, Dongzhi; Schaadt, Daniel M

2012-01-01

Sub-wavelength photonic structures and nanoscale materials have the potential to greatly improve the efficiencies of solar cells by enabling maximum absorption of sunlight. Semiconductor heterostructures provide versatile opportunities for improving absorption of infrared radiation in photovoltaic devices, which accounts for half of the power in the solar spectrum. These ideas can be combined in quantum-well solar cells and related structures in which sub-wavelength metal and dielectric scattering elements are integrated for light trapping. Measurements and simulations of GaAs solar cells with less than one micron of active material demonstrate the benefits of incorporating In(Ga)As quantum-wells and quantum-dots to improve their performance. Simulations that incorporate a realistic model of absorption in quantum-wells show that the use of broadband photonic structures with such devices can substantially improve the benefit of incorporating heterostructures, enabling meaningful improvements in their performance

Electron and nuclear spin system polarization in semiconductors by light

Energy Technology Data Exchange (ETDEWEB)

Zakharchenya, B; Flejsher, V

1981-02-01

Discussed are the principles of optical electron spin orientation, dynamic polarization and cooling of nuclear spin systems in optical electron orientation, and behavioural characteristics of bound electron and nuclear spin systems of a semiconductor in the optical orientation situation.

Solid state light source driver establishing buck or boost operation

Science.gov (United States)

Palmer, Fred

2017-08-29

A solid state light source driver circuit that operates in either a buck convertor or a boost convertor configuration is provided. The driver circuit includes a controller, a boost switch circuit and a buck switch circuit, each coupled to the controller, and a feedback circuit, coupled to the light source. The feedback circuit provides feedback to the controller, representing a DC output of the driver circuit. The controller controls the boost switch circuit and the buck switch circuit in response to the feedback signal, to regulate current to the light source. The controller places the driver circuit in its boost converter configuration when the DC output is less than a rectified AC voltage coupled to the driver circuit at an input node. The controller places the driver circuit in its buck converter configuration when the DC output is greater than the rectified AC voltage at the input node.

Interfacial trap states in junctions of molecular semiconductors

International Nuclear Information System (INIS)

Schlettwein, D.; Oekermann, T.; Jaeger, N.; Armstrong, N.R.; Woehrle, D.

2002-01-01

Interfacial states that were established in contacts of molecular semiconductors with aqueous electrolytes or in contacts with another organic semiconductor as a solid film were analyzed by photoelectrochemical experiments and by photoelectron spectroscopy. A crucial role of such states was indicated in the interfacial charge transfer and recombination kinetics of light-induced charge carriers and also in the energetic alignment in the solid contacts. Unsubstituted zinc-phthalocyanine (PcZn) served as model compound. The role of chemical interactions in the establishment of these interfacial states was investigated by use of different reaction partners, i.e., different redox couples in the electrolyte contacts and molecular semiconductors of different ionization potential in the solid contacts. Implications of these results for the use of organic semiconductor thin films in devices of molecular electronics and of dye molecules in dye-sensitized solar cells were also discussed

Radio Frequency Plasma Discharge Lamps for Use as Stable Calibration Light Sources

Science.gov (United States)

McAndrew, Brendan; Cooper, John; Arecchi, Angelo; McKee, Greg; Durell, Christopher

2012-01-01

Stable high radiance in visible and near-ultraviolet wavelengths is desirable for radiometric calibration sources. In this work, newly available electrodeless radio-frequency (RF) driven plasma light sources were combined with research grade, low-noise power supplies and coupled to an integrating sphere to produce a uniform radiance source. The stock light sources consist of a 28 VDC power supply, RF driver, and a resonant RF cavity. The RF cavity includes a small bulb with a fill gas that is ionized by the electric field and emits light. This assembly is known as the emitter. The RF driver supplies a source of RF energy to the emitter. In commercial form, embedded electronics within the RF driver perform a continual optimization routine to maximize energy transfer to the emitter. This optimization routine continually varies the light output sinusoidally by approximately 2% over a several-second period. Modifying to eliminate this optimization eliminates the sinusoidal variation but allows the output to slowly drift over time. This drift can be minimized by allowing sufficient warm-up time to achieve thermal equilibrium. It was also found that supplying the RF driver with a low-noise source of DC electrical power improves the stability of the lamp output. Finally, coupling the light into an integrating sphere reduces the effect of spatial fluctuations, and decreases noise at the output port of the sphere.

Fluorescent Silicon Carbide and its Applications in White Light-Emitting Diodes

DEFF Research Database (Denmark)

Ou, Yiyu

light extraction efficiency are presented. White LEDs are the most promising techniques to replace the conventional lighting sources. A typical white LED consists of a Gallium Nitride (GaN) blue or Ultraviolet (UV) LED stack and a wavelengthconversion material. Silicon Carbide (SiC) has a wide optical...... rendering performance and a much longer material lifetime compared with the commonly used wavelength-conversion material like Phosphors. In this thesis, f-SiC with different doping concentrations are analyzed and optimized in order to enhance the quantum efficiency. On the other hand, semiconductor...

Electron and nuclear spin system polarization in semiconductors by light

International Nuclear Information System (INIS)

Zakharchenya, B.; Flejsher, V.

1981-01-01

Discussed are the principles of optical electron spin orientation, dynamic polarization and cooling of nuclear spin systems in optical electron orientation, and behavioural characteristics of bound electron and nuclear spin systems of a semiconductor in the optical orientation situation. (J.P.)

Pioneering SESAME light source officially opened

CERN Multimedia

Caraban Gonzalez, Noemi

2017-01-01

Allan, Jordan, 16 May 2017. The SESAME light source was today officially opened by His Majesty King Abdullah II. An intergovernmental organization, SESAME is the first regional laboratory for the Middle East and neighbouring regions The laboratory’s official opening ushers in a new era of research covering fields ranging from medicine and biology, through materials science, physics and chemistry to healthcare, the environment, agriculture and archaeology.

A fast radiation-to-coherent light converter

International Nuclear Information System (INIS)

Wang, C.L.; Flatley, J.E.; Stewart, P.H.

1988-01-01

We have developed a radiation-to-coherent light converter (RCLC) with a monolithically integrated semiconductor chip that consists of a chromium-doped GaAs photoconductor detector modulates the laser diode, which has been biased above the lasing threshold, thus converting a radiation pulse to an electric pulse and then to a light pulse. The laser pulse is then transmitted to a fast recorder through a high-bandwidth optical fiber. In the absence of a single-step x-ray pumped laser, our converter appears to be the first integrated device that can efficiently convert x-ray flux into coherent light. This device has been tested successfully with the 50-ps electron beams of a 17-MeV linear accelerator and with 50-ns x-ray pulses from a Z-pinch plasma source. 2 refs., 9 figs

Classification of radioactive self-luminous light sources - approved 1975. NBS Handbook 116

International Nuclear Information System (INIS)

Anon.

1977-01-01

The standard establishes the classification of certain radioactive self-luminous light sources according to radionuclide, type of source, activity, and performance requirements. The objectives are to establish minimum prototype testing requirements for radioactive self-luminous light sources, to promote uniformity of marking such sources, and to establish minimum physical performance for such sources. The standard is primarily directed toward assuring adequate containment of the radioactive material. Testing procedures and classification designations are specified for discoloration, temperature, thermal shock, reduced pressure, impact, vibration, and immersion. A range of test requirements is presented according to intended usage and source activity

Study of Selecting on Light Source Used for Micro-algae Cultivation in Space

Science.gov (United States)

Ai, Weidang; Ai, Weidang; Guo, Shuang-Sheng; Gao, Feng; Tang, Yong-Kang; Qin, Li-Feng

To select suitable light source for micro-algae cultivation in future space station, the selected Spirulina plastensis(No.7) were cultured under different lightening qualities, including six light sources that were made up of different combinations of red and blue light-emitting diode(LED). The growth, photosynthetic efficiency and nutrition quality of the Spirulina, were analyzed. From the experiments, the red light may promote the cumulation of biomass of the Spirulina, and the cumulating rate was the highest under all red light source, but the syntheses of protein, phycobiliprotein, β-carotene, VE and other nutrients needs a certain portion of blue light; yet, the complete blue light condition is not favorable to the growth of Spirulina, and may bring pollution by chlorella and other kinds of micro-algae. It is concluded that the LEDs can be used as the light resource of micro-algae cultivation. The normal growth and development of microalgae need two light sources of both red and blue LEDs. The comprehensive analyses of the various factors that affect the growth of Spirulina, such as nutrition quality and photosynthetic activities, etc., showed that the combination of 80% red and 20% blue LED is the optimum one among those tested combinations. Key word: light-emitting diode; micro-algae; controlled ecological life support system (CELSS); space cultivation

Real-time tunability of chip-based light source enabled by microfluidic mixing

DEFF Research Database (Denmark)

Olsen, Brian Bilenberg; Rasmussen, Torben; Balslev, Søren

2006-01-01

We demonstrate real-time tunability of a chip-based liquid light source enabled by microfluidic mixing. The mixer and light source are fabricated in SU-8 which is suitable for integration in SU-8-based laboratory-on-a-chip microsystems. The tunability of the light source is achieved by changing...... the concentration of rhodamine 6G dye inside two integrated vertical resonators, since both the refractive index and the gain profile are influenced by the dye concentration. The effect on the refractive index and the gain profile of rhodamine 6G in ethanol is investigated and the continuous tuning of the laser...

Survey, alignment, and beam stability at the Advanced Light Source

International Nuclear Information System (INIS)

Krebs, G.F.

1997-10-01

This paper describes survey and alignment at the Lawrence Berkeley Laboratories Advanced Light Source (ALS) accelerators from 1993 to 1997. The ALS is a third generation light source requiring magnet alignment to within 150 microns. To accomplish this, a network of monuments was established and maintained. Monthly elevation surveys show the movement of the floor over time. Inclinometers have recently been employed to give real time information about magnet, vacuum tank and magnet girder motion in the ALS storage ring

Effect of temperature and phonons on the spectral properties of a multi-level semiconductor quantum dot single-photon source

DEFF Research Database (Denmark)

Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter

2009-01-01

Since it was realized that efficient quantum computing can be performed using single photons and standard linear optics elements, immense international research activity has been aimed at developing semiconductor quantum dot (QD) single-photon sources (SPS). In order to optimise the design of SPS...... us to study complicated multi-level QDs, not possible within the commonly used independent boson model (IBM)....

Metal/Semiconductor and Transparent Conductor/Semiconductor Heterojunctions in High Efficient Photoelectric Devices: Progress and Features

Directory of Open Access Journals (Sweden)

M. Melvin David Kumar

2014-01-01

Full Text Available Metal/semiconductor and transparent conductive oxide (TCO/semiconductor heterojunctions have emerged as an effective modality in the fabrication of photoelectric devices. This review is following a recent shift toward the engineering of TCO layers and structured Si substrates, incorporating metal nanoparticles for the development of next-generation photoelectric devices. Beneficial progress which helps to increase the efficiency and reduce the cost, has been sequenced based on efficient technologies involved in making novel substrates, TCO layers, and electrodes. The electrical and optical properties of indium tin oxide (ITO and aluminum doped zinc oxide (AZO thin films can be enhanced by structuring the surface of TCO layers. The TCO layers embedded with Ag nanoparticles are used to enhance the plasmonic light trapping effect in order to increase the energy harvesting nature of photoelectric devices. Si nanopillar structures which are fabricated by photolithography-free technique are used to increase light-active surface region. The importance of the structure and area of front electrodes and the effect of temperature at the junction are the value added discussions in this review.

Control and Driving Methods for LED Based Intelligent Light Sources

OpenAIRE

Beczkowski, Szymon

2012-01-01

High power light-emitting diodes allow the creation of luminaires capable of generating saturated colour light at very high efficacies. Contrary to traditional light sources like incandescent and high-intensity discharge lamps, where colour is generated using filters, LEDs use additive light mixing, where the intensity of each primary colour diode has to be adjusted to the needed intensity to generate specified colour. The function of LED driver is to supply the diode with power needed to ach...

Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

Science.gov (United States)

Ji, Jae-Hoon; Jo, GaeHun; Ha, Jae-Geun; Koo, Sang-Mo; Kamiko, Masao; Hong, JunHee; Koh, Jung-Hyuk

2018-09-01

In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

Hyperspectral microscopy to identify foodborne bacteria with optimum lighting source

Science.gov (United States)

Hyperspectral microscopy is an emerging technology for rapid detection of foodborne pathogenic bacteria. Since scattering spectral signatures from hyperspectral microscopic images (HMI) vary with lighting sources, it is important to select optimal lights. The objective of this study is to compare t...

White light emission from engineered silicon carbide

DEFF Research Database (Denmark)

Ou, Haiyan

Silicon carbide (SiC) is a wide indirect bandgap semiconductor. The light emission efficiency is low in nature. But this material has very unique physical properties like good thermal conductivity, high break down field etc in addition to its abundance. Therefore it is interesting to engineer its...... light emission property so that to take fully potential applications of this material. In this talk, two methods, i.e. doping SiC heavily by donor-acceptor pairs and making SiC porous are introduced to make light emission from SiC. By co-doping SiC with nitrogen and boron heavily, strong yellow emission...... is demonstrated. After optimizing the passivation conditions, strong blue-green emission from porous SiC is demonstrated as well. When combining the yellow emission from co-doped SiC and blue-green from porous SiC, a high color rendering index white light source is achieved....

Linac Coherent Light Source (LCLS) Design Study Report

Energy Technology Data Exchange (ETDEWEB)

Cornacchia, Massimo

1998-12-04

The Stanford Linear Accelerator Center, in collaboration with Los Alamos National Laboratory, Lawrence Livermore National Laboratory, and the University of California at Los Angeles, is proposing to build a Free-Electron-Laser (FEL) R and D facility operating in the wavelength range 1.5-15 {angstrom}. This FEL, called the ''Linac Coherent Light Source'' (LCLS), utilizes the SLAC linac and produces sub-picosecond pulses of short wavelength x-rays with very high peak brightness and full transverse coherence. Starting in FY 1998, the first two-thirds of the SLAC linac will be used for injection into the B factory. This leaves the last one-third free for acceleration to 15 GeV. The LCLS takes advantage of this opportunity, opening the way for the next generation of synchrotron light sources with largely proven technology and cost effective methods. This proposal is consistent with the recommendations of the Report of the Basic Energy Sciences Advisory Committee (Synchrotron Radiation Light Source Working Group, October 18-19, 1997). The report recognizes that ''fourth-generation x-ray sources...will in all likelihood be based on the free electron laser concepts. If successful, this technology could yield improvements in brightness by many orders of magnitude.'' This Design Study, the authors believe, confirms the feasibility of constructing an x-ray FEL based on the SLAC linac. Although this design is based on a consistent and feasible set of parameters, some components require more research and development to guarantee the performance. Given appropriate funding, this R and D phase can be completed in 2 years.

Laser wakefield accelerator based light sources: potential applications and requirements

Energy Technology Data Exchange (ETDEWEB)

Albert, F. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). NIF and Photon Sciences; Thomas, A. G. [Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Nuclear Engineering and Radiological Sciences; Mangles, S. P.D. [Imperial College, London (United Kingdom). Blackett Lab.; Banerjee, S. [Univ. of Nebraska, Lincoln, NE (United States); Corde, S. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Flacco, A. [ENSTA, CNRS, Ecole Polytechnique, Palaiseau (France); Litos, M. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Neely, D. [Science and Technology Facilities Council (STFC), Oxford (United Kingdom). Rutherford Appleton Lab. (RAL). Central Laser Facility; Viera, J. [Univ. of Lisbon (Portugal). GoLP-Inst. de Plasmas e Fusao Nuclear-Lab. Associado; Najmudin, Z. [Imperial College, London (United Kingdom). Blackett Lab.; Bingham, R. [Science and Technology Facilities Council (STFC), Oxford (United Kingdom). Rutherford Appleton Lab. (RAL). Central Laser Facility; Joshi, C. [Univ. of California, Los Angeles, CA (United States). Dept. of Electrical Engineering; Katsouleas, T. [Duke Univ., Durham, NC (United States). Platt School of Engineering

2015-01-15

In this article we review the prospects of laser wakefield accelerators as next generation light sources for applications. This work arose as a result of discussions held at the 2013 Laser Plasma Accelerators Workshop. X-ray phase contrast imaging, X-ray absorption spectroscopy, and nuclear resonance fluorescence are highlighted as potential applications for laser-plasma based light sources. We discuss ongoing and future efforts to improve the properties of radiation from plasma betatron emission and Compton scattering using laser wakefield accelerators for these specific applications.

Plasmon enhanced green GaN light-emitting diodes - Invited paper

DEFF Research Database (Denmark)

Ou, Haiyan; Fadil, Ahmed; Iida, Daisuke

in spectral design, more compact etc. TheIII-nitride (GaN, InNetc.) semiconductors are attracting a lot of research effort because the combination of both could emit light with wavelength range from UV to infrared. Basically one material platform could provide all the solutions to light sources.However huge...... nanosphere lithography. For both cases, emission enhancement is demonstrated. For periodic Ag nanoparicles, aphotoluminescence enhancement of 2.7 is observed with a nanodisk diameter of 330 nm.It is found that an optimalpitch exists for a given particle size.For the random Ag nanoparticles,low temperature...

Source attribution of insoluble light-absorbing particles in seasonal snow across northern China

Science.gov (United States)

Zhang, R.; Hegg, D. A.; Huang, J.; Fu, Q.

2013-06-01

Seasonal snow samples obtained at 46 sites in 6 provinces of China in January and February 2010 were analyzed for a suite of chemical species and these data are combined with previously determined concentrations of insoluble light-absorbing particles (ILAP), including all particles that absorb light in the 650-700 nm wavelength interval. The ILAP, together with 14 other analytes, are used as input to a positive matrix factorization (PMF) receptor model to explore the sources of ILAP in the snow. The PMF analysis for ILAP sources is augmented with backward trajectory cluster analysis and the geographic locations of major source areas for the three source types. The two analyses are consistent and indicate that three factors/sources were responsible for the measured light absorption of snow: a soil dust source, an industrial pollution source, and a biomass and / or biofuel burning source. Soil dust was the main source of the ILAP, accounting for ~53% of ILAP on average.

Source attribution of insoluble light-absorbing particles in seasonal snow across northern China

Directory of Open Access Journals (Sweden)

R. Zhang

2013-06-01

Full Text Available Seasonal snow samples obtained at 46 sites in 6 provinces of China in January and February 2010 were analyzed for a suite of chemical species and these data are combined with previously determined concentrations of insoluble light-absorbing particles (ILAP, including all particles that absorb light in the 650–700 nm wavelength interval. The ILAP, together with 14 other analytes, are used as input to a positive matrix factorization (PMF receptor model to explore the sources of ILAP in the snow. The PMF analysis for ILAP sources is augmented with backward trajectory cluster analysis and the geographic locations of major source areas for the three source types. The two analyses are consistent and indicate that three factors/sources were responsible for the measured light absorption of snow: a soil dust source, an industrial pollution source, and a biomass and / or biofuel burning source. Soil dust was the main source of the ILAP, accounting for ~53% of ILAP on average.

Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

Science.gov (United States)

Ahn, Doyeol; Park, Seoung-Hwan

2016-01-01

In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding energy, and high-density misfit dislocations due to lattice-mismatched substrates. Cuprous halides I-VII semiconductors, on the other hand, have negligible built-in field, large exciton binding energies and close lattice matched to silicon substrates. Recent experimental studies have shown that the luminescence of I-VII CuCl grown on Si is three orders larger than that of GaN at room temperature. Here we report yet unexplored potential of cuprous halides systems by investigating the optical gain of CuCl/CuI quantum wells. It is found that the optical gain and the luminescence are much larger than that of group III-nitrides due to large exciton binding energy and vanishing electrostatic fields. We expect that these findings will open up the way toward highly efficient cuprous halides based LEDs compatible to Si technology. PMID:26880097

Lack of enhanced photocatalytic formation of iodine on particulate semiconductor mixtures.

Science.gov (United States)

Karunakaran, C; Anilkumar, P; Vinayagamoorthy, P

2012-12-01

Under UV-A light illumination, formation of iodine from iodide ion on the surfaces of anatase TiO(2), ZnO, Fe(2)O(3), CeO(2), MoO(3), Bi(2)O(3), and Nb(2)O(5) increases with the concentration of iodide ion, airflow rate and light intensity and conform to the Langmuir-Hinshelwood kinetic model. Measurement of the particle size of the semiconductor oxides by light scattering method and deduction of the same from the determined specific surface area show that the oxide particles agglomerate in suspension. However, mixtures of any two listed particulate semiconductors do not show enhanced photocatalytic formation of iodine indicating absence of interparticle charge transfer. The results are rationalized. Copyright © 2012 Elsevier B.V. All rights reserved.

Optically induced Hall effect in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Idrish Miah, M; Gray, E Mac A, E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

2009-03-01

We describe an experiment which investigates the effect of a longitudinal electric field on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a Hall voltage resulting from nonequilibrium magnetization induced by the spin-carrier electrons accumulating at the transverse boundaries of the sample as a result of asymmetries in scattering for spin-up and spin-down electrons in the presence of spin-orbit interaction. It is found that the effect depends on the longitudinal electric field and doping density as well as on temperature. The results are presented by discussing the dominant spin relaxation mechanisms in semiconductors.

Phenol Removal by a Novel Non-Photo-Dependent Semiconductor Catalyst in a Pilot-Scaled Study: Effects of Initial Phenol Concentration, Light, and Catalyst Loading

Directory of Open Access Journals (Sweden)

Xiao Chen

2014-01-01

Full Text Available A novel non-photo-dependent semiconductor catalyst (CT was employed to degrade phenol in the present pilot-scaled study. Effect of operational parameters such as phenol initial concentration, light area, and catalyst loading on phenol degradation, was compared between CT catalyst and the conventional photocatalyst titanium dioxide. CT catalyst excelled titanium dioxide in treating and mineralizing low-level phenol, under both mild UV radiation and thunder conditions of nonphoton. The result suggested that CT catalyst could be applied in circumstances when light is not easily accessible in pollutant-carrying media (e.g., particles, cloudy water, and colored water.

The role of input chirp on phase shifters based on slow and fast light effects in semiconductor optical amplifiers

DEFF Research Database (Denmark)

Xue, Weiqi; Chen, Yaohui; Öhman, Filip

2009-01-01

We experimentally investigate the initial chirp dependence of slow and fast light effects in a semiconductor optical amplifier followed by an optical filter. It is shown that the enhancement of the phase shift due to optical filtering strongly depends on the chirp of the input optical signal. We...... demonstrate ~120º phase delay as well as ~170º phase advance at a microwave frequency of 19 GHz for different optimum values of the input chirp. The experimental results are shown to be in good agreement with numerical results based on a four-wave mixing model. Finally, a simple physical explanation based...

Semiconductor Laser Wind Lidar for Turbine Control

DEFF Research Database (Denmark)

Hu, Qi

This thesis describes an experimentally oriented study of continuous wave (CW) coherent Doppler lidar system design. The main application is remote wind sensing for active wind turbine control using nacelle mounted lidar systems; and the primary focus is to devise an industrial instrument that can...... historical overview within the topic of wind lidar systems. Both the potential and the challenges of an industrialized wind lidar has been addressed here. Furthermore, the basic concept behind the heterodyne detection and a brief overview of the lidar signal processing is explained; and a simple...... investigation of the telescope truncation and lens aberrations is conducted, both numerically and experimentally. It is shown that these parameters dictate the spatial resolution of the lidar system, and have profound impact on the SNR. In this work, an all-semiconductor light source is used in the lidar design...

Quantum confined laser devices optical gain and recombination in semiconductors

CERN Document Server

Blood, Peter

2015-01-01

The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

Liquid Crystalline Semiconductors Materials, properties and applications

CERN Document Server

Kelly, Stephen; O'Neill, Mary

2013-01-01

This is an exciting stage in the development of organic electronics. It is no longer an area of purely academic interest as increasingly real applications are being developed, some of which are beginning to come on-stream. Areas that have already been commercially developed or which are under intensive development include organic light emitting diodes (for flat panel displays and solid state lighting), organic photovoltaic cells, organic thin film transistors (for smart tags and flat panel displays) and sensors. Within the family of organic electronic materials, liquid crystals are relative newcomers. The first electronically conducting liquid crystals were reported in 1988 but already a substantial literature has developed. The advantage of liquid crystalline semiconductors is that they have the easy processability of amorphous and polymeric semiconductors but they usually have higher charge carrier mobilities. Their mobilities do not reach the levels seen in crystalline organics but they circumvent all of t...

National synchrotron light source basic design and project status

International Nuclear Information System (INIS)

van Steenbergen, A.

1981-01-01

A summary description and the basic design parameters of the National Synchrotron Light Source, a facility for the generation of intense synchrotron radiation in the vuv and x-ray range is presented, the parameters of the sources are given, the presently planned facility beam lines are tabulated and the status of the project is indicated

Statistical properties of intensity of partially polarised semiconductor laser light backscattered by a single-mode optical fibre

International Nuclear Information System (INIS)

Alekseev, A E; Potapov, V T; Gorshkov, B G

2015-01-01

We report the results of studying statistical properties of the intensity of partially polarised coherent light backscattered by a single mode optical fibre. An expression is derived for the deviation of the backscattered light intensity depending on the scattering region length, the degree of the light source coherence and the degree of scattered light polarisation. It is shown that the backscattered light in a fibre scattered-light interferometer is partially polarised with the polarisation degree P = 1/3 in the case of external perturbations of the interferometer fibre. (scattering of light)

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

Science.gov (United States)

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Large-area and bright pulsed electroluminescence in monolayer semiconductors

KAUST Repository

Lien, Der-Hsien; Amani, Matin; Desai, Sujay B.; Ahn, Geun Ho; Han, Kevin; He, Jr-Hau; Ager, Joel W.; Wu, Ming C.; Javey, Ali

2018-01-01

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Large-area and bright pulsed electroluminescence in monolayer semiconductors

KAUST Repository

Lien, Der-Hsien

2018-04-04

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Nonlinear Gain Saturation in Active Slow Light Photonic Crystal Waveguides

DEFF Research Database (Denmark)

Chen, Yaohui; Mørk, Jesper

2013-01-01

We present a quantitative three-dimensional analysis of slow-light enhanced traveling wave amplification in an active semiconductor photonic crystal waveguides. The impact of slow-light propagation on the nonlinear gain saturation of the device is investigated.......We present a quantitative three-dimensional analysis of slow-light enhanced traveling wave amplification in an active semiconductor photonic crystal waveguides. The impact of slow-light propagation on the nonlinear gain saturation of the device is investigated....

Semi-analytical model of filtering effects in microwave phase shifters based on semiconductor optical amplifiers

DEFF Research Database (Denmark)

Chen, Yaohui; Xue, Weiqi; Öhman, Filip

2008-01-01

We present a model to interpret enhanced microwave phase shifts based on filter assisted slow and fast light effects in semiconductor optical amplifiers. The model also demonstrates the spectral phase impact of input optical signals.......We present a model to interpret enhanced microwave phase shifts based on filter assisted slow and fast light effects in semiconductor optical amplifiers. The model also demonstrates the spectral phase impact of input optical signals....

Optical cavity furnace for semiconductor wafer processing

Science.gov (United States)

Sopori, Bhushan L.

2014-08-05

An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

Designing solution-processable air-stable liquid crystalline crosslinkable semiconductors

DEFF Research Database (Denmark)

McCulloch, I.; Bailey, C.; Genevicius, K.

2006-01-01

organic light emitting diode displays, low frequency radio frequency identification tag and other low performance electronics. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes...... the development of reactive mesogen semiconductors, which form large crosslinked LC domains on polymerization within mesophases. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed...

The synchrotron light source ROSY

International Nuclear Information System (INIS)

Einfeld, D.; Buettig, H.; Dienel, S.; Glaeser, W.; Goetz, T.; Guratzsch, H.; Hartmann, B.; Janssen, D.; Krug, H.; Linnemann, J.; Matz, W.; Murphy, J.B.; Neumann, W.; Oehme, W.; Picard, M.; Plesko, M.; Proehl, D.; Schlenk, R.; Tomassini, D.; Tyrroff, H.

1994-01-01

ROSY, a 3rd generation synchrotron light source, has been proposed to be built at the Research Center Rossendorf/Dresden in Germany. With its low emittance and optimized space for installing insertion devices ROSY will be the first synchrotron radiation source in the 3 GeV range in Europe, dedicated to materials research and industrial application. The critical wavelength of the synchrotron radiation spectra was designed to be 0.15 nm corresponding to a critical photon energy of 8.4 keV. It is proposed to use a ''modified multiple bend achromat'' (MBA) lattice in order to get a compact machine as well as a low emittance. For 3 GeV an emittance smaller than 30π nm rad can be obtained. With a fourfold symmetry and two larger straight sections within the achromatic arcs the circumference is 148 m. 23% of the circumference can be used for installing insertion devices. (orig.)

Light source comprising a common substrate, a first led device and a second led device

Science.gov (United States)

Choong, Vi-En

2010-02-23

At least one stacked organic or polymeric light emitting diode (PLEDs) devices to comprise a light source is disclosed. At least one of the PLEDs includes a patterned cathode which has regions which transmit light. The patterned cathodes enable light emission from the PLEDs to combine together. The light source may be top or bottom emitting or both.

The study of LED light source illumination conditions for ideal algae cultivation

Science.gov (United States)

Tsai, Chun-Chin; Huang, Chien-Fu; Chen, Cin-Fu; Yue, Cheng-Feng

2017-02-01

Utilizing LED light source modules with 3 different RGB colors, the illumination effect of different wavelengths had been investigated on the growth curve of the same kind of micro algae. It was found that the best micro algae culturing status came out with long wavelength light such as red light (650 670 nm). Based on the same condition for a period of 3 weeks , the grown micro algae population density ratio represented by Optical Density (O.D.) ratio is 1?0.4?0.7 corresponding to growth with Red, Green, Blue light sources, respectively. Mixing 3 types and 2 types of LEDs with different parameters, the grown micro algae population densities were compared in terms of O.D. Interestingly enough, different light sources resulted in significant discoloration on micro algae growth, appearing yellow, brown, green, etc. Our experiments results showed such discoloration effect is reversible. Based on the same lighting condition, micro algae growth can be also affected by incubator size, nutrition supply, and temperature variation. In recent years, micro algae related technologies have been international wise a hot topic of energy and environmental protection for research and development institutes, and big energy companies among those developed countries. There will be an economically prosperous future. From this study of LED lighting to ideal algae cultivation, it was found that such built system would be capable of optimizing artificial cultivation system, leading to economic benefits for its continuous development. Since global warming causing weather change, accompanying with reducing energy sources and agriculture growth shortage are all threatening human being survival.

Determination of illuminants representing typical white light emitting diodes sources

DEFF Research Database (Denmark)

Jost, S.; Ngo, M.; Ferrero, A.

2017-01-01

is to develop LED-based illuminants that describe typical white LED products based on their Spectral Power Distributions (SPDs). Some of these new illuminants will be recommended in the update of the CIE publication 15 on colorimetry with the other typical illuminants, and among them, some could be used......Solid-state lighting (SSL) products are already in use by consumers and are rapidly gaining the lighting market. Especially, white Light Emitting Diode (LED) sources are replacing banned incandescent lamps and other lighting technologies in most general lighting applications. The aim of this work...... to complement the CIE standard illuminant A for calibration use in photometry....

Beam shaping of light sources using circular photonic crystal funnel

Science.gov (United States)

Kumar, Mrityunjay; Kumar, Mithun; Dinesh Kumar, V.

2012-10-01

A novel two-dimensional circular photonic crystal (CPC) structure with a sectorial opening for shaping the beam of light sources was designed and investigated. When combined with light sources, the structure acts like an antenna emitting a directional beam which could be advantageously used in several nanophotonic applications. Using the two-dimensional finite-difference time-domain (2D FDTD) method, we examined the effects of geometrical parameters of the structure on the directional and transmission properties of emitted radiation. Further, we examined the transmitting and receiving properties of a pair of identical structures as a function of distance between them.

Spherical distribution structure of the semiconductor laser diode stack for pumping

International Nuclear Information System (INIS)

Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

2011-01-01

A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

Electric currents induced by twisted light in Quantum Rings.

Science.gov (United States)

Quinteiro, G F; Berakdar, J

2009-10-26

We theoretically investigate the generation of electric currents in quantum rings resulting from the optical excitation with twisted light. Our model describes the kinetics of electrons in a two-band model of a semiconductor-based mesoscopic quantum ring coupled to light having orbital angular momentum (twisted light). We find the analytical solution, which exhibits a "circular" photon-drag effect and an induced magnetization, suggesting that this system is the circular analog of that of a bulk semiconductor excited by plane waves. For realistic values of the electric field and material parameters, the computed electric current can be as large as microA; from an applied perspective, this opens new possibilities to the optical control of the magnetization in semiconductors.

Consideration of a non-baked start-up of a synchrotron light source

International Nuclear Information System (INIS)

Hori, Y.; Kobayashi, M.

1996-01-01

Vacuum baking of large complex uhv devices, such as synchrotron light sources, requires both careful design and consideration of potential problems regarding the operation and maintenance of the device. Intense synchrotron irradiation can be utilized for degassing; it is indeed necessary to achieve the required operating pressure in most light sources. To examine a non-baked start-up, the outgassing of non-baked chambers by SR irradiation was measured. Also, a non-baked start-up was carried out at the Photon Factory ring. Both results demonstrate the feasibility of a non-baked start-up of a light source. The experiments and results are described, together with several other problems which must be solved for a non-baked start-up. (Author)

FY 1999 report on the results of the development of high efficiency lightning conversion compound semiconductor. Plan on lighting for the 21st century; Kokoritsu denko henkan kagobutsu handotai kaihatsu seika hokokusho. 21 seiki no akari keikaku

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

For the purpose of developing the white light-emitting diode (LEDs) lightening as 'a plan on lighting for the 21st century,' the results of the following R and D were obtained: 1) basic study of light-emitting mechanism; 2) improvement of epitaxial growth method of blue/ultraviolet LED; 3) substrate for homoepitaxial growth; 4) basic characteristics of phosphor-based light source for white LED lighting. In 1), light emitting mechanisms responsible for high-quantum efficiency of InGaN mixed semiconductors and InGaN/GaN quantum wells were studied by means of temperature-dependent photoluminescence (PL), time-resolved PL and selective-excitation PL spectroscopy. In 2), precise lapping and polishing procedures of sapphire and GaN crystalline substrates for epitaxial growth using metalorganic chemical-vapor-deposition and MBE showed favorable surface characteristics of substrates. In 3), study was made on growth conditions and growth mechanism of GaN bulk single crystals using the nitrogen pressure-controlled solution growth method. A size of 12mm diameter of GaN single crystal showing good crystallinity and PL characteristics were obtained. In 4), excitation, absorption and PL spectra of rare-earth doped Y{sub 2}O{sub 2}S red phosphor were studied in detail. (NEDO)

Impact of nano particles on semiconductor manufacturing

NARCIS (Netherlands)

Wali, F.; Knotter, D.M.; Kuper, F.G.

2008-01-01

Semiconductor industry faces a continuous challenge to decrease the transistor size as well as to increase the yield by eliminating defect sources. One of the sources of particle defects is ultra pure water used in different production tools at different stages of processing. In this paper, particle

Controlled fabrication of semiconductor-metal hybrid nano-heterostructures via site-selective metal photodeposition

Science.gov (United States)

Vela Becerra, Javier; Ruberu, T. Purnima A.

2017-12-05

A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.

n/p-Type changeable semiconductor TiO{sub 2} prepared from NTA

Energy Technology Data Exchange (ETDEWEB)

Li Qiuye; Wang Xiaodong; Jin Zhensheng, E-mail: zhenshengjin@henu.edu.cn; Yang Dagang; Zhang Shunli; Guo Xinyong; Yang Jianjun; Zhang Zhijun [Henan University, Key Laboratory of Special Functional Materials (China)

2007-10-15

A novel kind of nano-sized TiO{sub 2} (anatase) was obtained by high-temperature (400-700 deg. C) dehydration of nanotube titanic acid (H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2}, NTA). The high-temperature (400-700 deg. C) dehydrated nanotube titanic acids (HD-NTAs) with a unique defect structure exhibited a p-type semiconductor behavior under visible-light irradiation ({lambda}{>=} 420nm, E{sub photon}=2.95 eV), whereas exhibited an n-type semiconductor behavior irradiated with UV light ({lambda}{>=} 365nm, E{sub photon}=3.40 eV)

Aerosol behavior and light water reactor source terms

International Nuclear Information System (INIS)

Abbey, F.; Schikarski, W.O.

1988-01-01

The major developments in nuclear aerosol modeling following the accident to pressurized water reactor Unit 2 at Three Mile Island are briefly reviewed and the state of the art summarized. The importance and implications of these developments for severe accident source terms for light water reactors are then discussed in general terms. The treatment is not aimed at identifying specific source term values but is intended rather to illustrate trends, to assess the adequacy of the understanding of major aspects of aerosol behavior for source term prediction, and demonstrate in qualitative terms the effect of various aspects of reactor design. Areas where improved understanding of aerosol behavior might lead to further reductions in current source terms predictions are also considered