WorldWideScience

Sample records for semiconductor industries specifically

  1. Obtaining of polycrystalline silicon for semiconductor industry

    International Nuclear Information System (INIS)

    Mukashev, F.; Nauryzbaev, M.; Kolesnikov, B.; Ivanov, Y.

    1996-01-01

    The purpose of the project is to create pilot equipment and optimize the process of obtaining polycrystalline silicon on semi-industrial level. In the past several decades, the historical experience in the developing countries has shown that one of the most promising ways to improve the economy,of a country is to establish semiconductor industry. First of all, the results can help increase defense, national security and create industrial production. The silane method, which has been traditionally' used for obtaining technical and polycrystalline silicon, is to obtain and then to pyrolyzed mono-and poly silanes. Although the traditional methods of obtaining silicon hydrides have specific advantages, such as utilizing by-products, they also have clear shortcomings, i.e. either low output of the ultimate product ( through hydrolysis of Mg 2 Si) or high contents of by-products in it or high contents of dissolving vapors (through decomposing Mg 2 Si in non-water solutions)

  2. Productivity improvement through industrial engineering in the semiconductor industry

    Science.gov (United States)

    Meyersdorf, Doron

    1996-09-01

    Industrial Engineering is fairly new to the semiconductor industry, though the awareness to its importance has increased in recent years. The US semiconductor industry in particular has come to the realization that in order to remain competitive in the global market it must take the lead not only in product development but also in manufacturing. Industrial engineering techniques offer one ofthe most effective strategies for achieving manufacturing excellence. Industrial engineers play an important role in the success of the manufacturing facility. This paper defines the Industrial engineers role in the IC facility, set the visions of excellence in semiconductor manufacturing and highlights 10 roadblocks on the journey towards manufacturing excellence.

  3. Offshoring in the Semiconductor Industry: Historical Perspectives

    OpenAIRE

    Brown, Clair; Linden, Greg

    2005-01-01

    Semiconductor design is a frequently-cited example of the new wave of offshoring and foreign-outsourcing of service sector jobs. It is certainly a concern to U.S. design engineers themselves. In addition to the current wave of white-collar outsourcing, the industry also has a rich experience with offshoring of manufacturing activity. Semiconductor companies were among the first to invest in offshore facilities to manufacture goods for imports back to the U.S. A brief review of these earlie...

  4. Radiation effects and hardness of semiconductor electronic devices for nuclear industry

    International Nuclear Information System (INIS)

    Payat, R.; Friant, A.

    1988-01-01

    After a brief review of industrial and nuclear specificity and radiation effects in electronics components (semiconductors) the need for a specific test methodology of semiconductor devices is emphasized. Some studies appropriate for nuclear industry at D. LETI/DEIN/CEN-SACLAY are related [fr

  5. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  6. Will Future Measurement Needs of the Semiconductor Industry Be Met?

    Science.gov (United States)

    Bennett, Herbert S

    2007-01-01

    We discuss the ability of the nation's measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry's powerful impact in the world's macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry.

  7. Semiconductor industry wafer fab exhaust management

    CERN Document Server

    Sherer, Michael J

    2005-01-01

    Given the myriad exhaust compounds and the corresponding problems that they can pose in an exhaust management system, the proper choice of such systems is a complex task. Presenting the fundamentals, technical details, and general solutions to real-world problems, Semiconductor Industry: Wafer Fab Exhaust Management offers practical guidance on selecting an appropriate system for a given application. Using examples that provide a clear understanding of the concepts discussed, Sherer covers facility layout, support facilities operations, and semiconductor process equipment, followed by exhaust types and challenges. He reviews exhaust point-of-use devices and exhaust line requirements needed between process equipment and the centralized exhaust system. The book includes information on wet scrubbers for a centralized acid exhaust system and a centralized ammonia exhaust system and on centralized equipment to control volatile organic compounds. It concludes with a chapter devoted to emergency releases and a separ...

  8. Review of the Semiconductor Industry and Technology Roadmap.

    Science.gov (United States)

    Kumar, Sameer; Krenner, Nicole

    2002-01-01

    Points out that the semiconductor industry is extremely competitive and requires ongoing technological advances to improve performance while reducing costs to remain competitive and how essential it is to gain an understanding of important facets of the industry. Provides an overview of the initial and current semiconductor technology roadmap that…

  9. Where the chips fall: environmental health in the semiconductor industry.

    Science.gov (United States)

    Chepesiuk, R

    1999-09-01

    Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment.

  10. Use of radioactive tracers in the semiconductor industry

    International Nuclear Information System (INIS)

    Akerman, Karol

    1975-01-01

    Manufacture of the semiconductor materials comprises production and purification of the raw materials (GeC14 or SiHC13), purification of the elemental semiconductors by metallurgical methods (including zone melting), production and doping of single crystals, dividing the crystals into slices of suitable size, formation of p-n junctions and fabrication of the finished semiconductor devices. In the sequence of operations, the behavior of very small quantities of an element must be monitored, and radioactive tracers are often used to solve these problems. Examples are given of the use of radioactive tracers in the semiconductor industry

  11. Cases Series of Malignant Lymphohematopoietic Disorder in Korean Semiconductor Industry

    Directory of Open Access Journals (Sweden)

    Eun-A Kim

    2011-06-01

    Conclusion: Considering the possibility of exposure to carcinogenic agents, we could not find any convincing evidence for occupational exposure in all investigated cases. However, further study is needed because the semiconductor industry is a newly developing one.

  12. Revenue sharing in semiconductor industry supply chain ...

    Indian Academy of Sciences (India)

    to reduce demand opportunities, inventory needs and production efficiencies, in addition to reducing .... design based on coalition structures in semiconductor supply chain. ..... supplier/contract manufacturer for a product/component category.

  13. Cancer and reproductive risks in the semiconductor industry.

    Science.gov (United States)

    LaDou, Joseph; Bailar, John C

    2007-01-01

    Although many reproductive toxicants and carcinogens are used in the manufacture of semiconductor chips, and worrisome findings have been reported, no broad epidemiologic study has been conducted to define possible risks in a comprehensive way. With few exceptions, the American semiconductor industry has not supported access for independent studies. Older technologies are exported to newly industrialized countries as newer technologies are installed in Japan, the United States, and Europe. Thus there is particular concern about the many workers, mostly in countries that are still industrializing, who have jobs that use chemicals, technologies, and equipment that are no longer in use in developed countries. Since most countries lack cancer registries and have inadequate reproductive and cancer reporting mechanisms, industry efforts to control exposures to carcinogens are of particular importance. Government agencies, the courts, industry, publishers, and academia, on occasion, collude to ignore or to downplay the importance of occupational diseases. Examples of how this happens in the semiconductor industry are presented.

  14. Applications of nuclear microprobes in the semiconductor industry

    International Nuclear Information System (INIS)

    Takai, M.

    1996-01-01

    Possible nuclear microprobe applications in semiconductor industries are discussed. A unique technique using soft-error mapping and ion beam induced current measurements for reliability testing of dynamic random access memories such as soft-error immunity and noise carrier suppression has been developed for obtaining design parameters of future memory devices. Nano-probes and small installation areas are required for the use of microprobes in the semiconductor industry. Issues arising from microprobe applications such as damage induced by the probe beam are clarified. (orig.)

  15. Metrology-based control and profitability in the semiconductor industry

    Science.gov (United States)

    Weber, Charles

    2001-06-01

    This paper summarizes three studies of the semiconductor industry conducted at SEMATECH and MIT's Sloan School of Management. In conjunction they lead to the conclusion that rapid problem solving is an essential component of profitability in the semiconductor industry, and that metrology-based control is instrumental to rapid problem solving. The studies also identify the need for defect attribution. Once a source of a defect has been identified, the appropriate resources--human and technological--need to be brought into the physically optimal location for corrective action. The Internet is likely to enable effective defect attribution by inducing collaboration between different companies.

  16. Specific heat in diluted magnetic semiconductor quantum ring

    Science.gov (United States)

    Babanlı, A. M.; Ibragimov, B. G.

    2017-11-01

    In the present paper, we have calculated the specific heat and magnetization of a quantum ring of a diluted magnetic semiconductor (DMS) material in the presence of magnetic field. We take into account the effect of Rashba spin-orbital interaction, the exchange interaction and the Zeeman term on the specific heat. We have calculated the energy spectrum of the electrons in diluted magnetic semiconductor quantum ring. Moreover we have calculated the specific heat dependency on the magnetic field and Mn concentration at finite temperature of a diluted magnetic semiconductor quantum ring.

  17. Semiconductor industry: a survey of structure, conduct, and performance

    International Nuclear Information System (INIS)

    Webbink, D.W.

    1977-01-01

    The study describes the structure, conduct, and performance of the semiconductor industry. The industry is characterized by a high rate of innovation and technological change, rapidly falling costs and prices, and rapidly rising sales in boom periods as well as large declines in sales in recession periods. These desirable performance characteristics take place in an industry that has moderately high domestic levels of concentration. However, there are many features that cause this industry to have behavior and performance that is markedly different from such highly concentrated industries as automobiles and steel. These features were investigated and are reported

  18. Toward a Theory of Industrial Development and Vertical Disintegration : The Case of the Semiconductor Industry

    OpenAIRE

    末永, 啓一郎

    2007-01-01

    The semiconductor industry has accomplished surprising growth, and its production basehas extended from the United States to Japan, Europe, and other Asian economies. One of thefactors of this phenomenon is the progress of vertical disintegration in the semiconductor industry.The boundaries of firms are discussed within a transaction cost framework. However, toidentify the process of long-term vertical disintegration at an industrial level, a dynamic theoryrather than a static theory is neces...

  19. Technician Training for the Semiconductor Microdevices Industry. Final Report.

    Science.gov (United States)

    Center for Occupational Research and Development, Inc., Waco, TX.

    The Center for Occupational Research and Development (CORD) carried out four activities to foster semiconductor manufacturing technician (SMT) training: (1) collaboration with industry experts and educators while developing a curriculum to train SMTs; (2) implementation and testing of the curriculum at a technical college; (3) dissemination of…

  20. Canberra semiconductor, an industrial partner for physics research

    International Nuclear Information System (INIS)

    Verplancke, J.; Burger, P.; Schoenmaekers, W.

    1990-01-01

    Canberra semiconductor produces germanium and silicon solid state detectors for nuclear radiation. Its business domain covers the production of standard detectors on an industrial basis, for industrial and applied physics applications, as well as the development of special detectors and electronics, tailored to the needs of a particular application, in science and research. There exists an important and beneficial interaction between these two activities. (orig.)

  1. Industry specific financial distress modeling

    Directory of Open Access Journals (Sweden)

    Naz Sayari

    2017-01-01

    Full Text Available This study investigates uncertainty levels of various industries and tries to determine financial ratios having the greatest information content in determining the set of industry characteristics. It then uses these ratios to develop industry specific financial distress models. First, we employ factor analysis to determine the set of ratios that are most informative in specified industries. Second, we use a method based on the concept of entropy to measure the level of uncertainty in industries and also to single out the ratios that best reflect the uncertainty levels in specific industries. Finally, we conduct a logistic regression analysis and derive industry specific financial distress models which can be used to judge the predictive ability of selected financial ratios for each industry. The results show that financial ratios do indeed echo industry characteristics and that information content of specific ratios varies among different industries. Our findings show diverging impact of industry characteristics on companies; and thus the necessity of constructing industry specific financial distress models.

  2. Offshoring in the Semiconductor Industry: A Historical Perspective

    OpenAIRE

    Brown, Clair; Linden, Greg

    2005-01-01

    Semiconductor design is a frequently-cited example of the new wave of offshoring and foreign-outsourcing of service sector jobs. It is certainly a concern to U.S. design engineers themselves. In addition to the current wave of white-collar outsourcing, the industry also has a rich experience with offshoring of manufacturing activity. Semiconductor companies were among the first to invest in offshore facilities to manufacture goods for imports back to the U.S. A brief review of these...

  3. Metrology needs and challenges for the semiconductor industry

    International Nuclear Information System (INIS)

    Schroeder, Kenneth; Ashkenaz, Scott; Hankinson, Matt

    2001-01-01

    The aggressively shrinking process window drives the semiconductor manufacturer to examine, refine, and control all aspects of the manufacturing process. Process budgets leave little room for error contribution. Budget management, and ultimately achieving the goal, requires an understanding of the constituent components, and development of mitigation strategies. We present some of the challenges facing our industry and strategies that we are taking to address them

  4. Applications of Nuclear Reaction Analysis for Semiconductor Industry

    International Nuclear Information System (INIS)

    Wei Luncun

    2003-01-01

    Many thin film samples used in the semiconductor industry contain C, N and O. The detection limits and accuracy obtained by Rutherford Backscattering Spectroscopy (RBS) measurement are limited due to the small cross section values. High energy non-Rutherford backscattering is often used to enhance the sensitivities. But non-Rutherford cross section values are irregular and can not be calculated as normal Rutherford backscattering values. It is also difficult to find an appropriate energy window that for all these elements, and high-energy ions are needed. In this paper, the Nuclear Reaction Analysis (NRA) method is used to simultaneously measure C, N and O. several applications in the semiconductor research, development, and manufacturing areas are presented

  5. Analysis of Logistics Costs of the Ukrainian Semiconductor Industry

    Directory of Open Access Journals (Sweden)

    Popova Viktoriya D.

    2014-01-01

    Full Text Available The goal of the article is analysis of logistics costs in production of semiconductor materials using example of two Ukrainian enterprises. The article studies influence of logistics management and logistics costs upon formation of the final cost value (price of a commodity (service. It gives an assessment of logistics costs of Ukrainian semiconductor enterprises and establishes its structure by types of main expenditure items: material, transport, production and storehouse. It establishes the generalised quantitative structure of logistics costs of Ukrainian semiconductor enterprises with various forms of ownership under conditions of a situational growth of cost value of products and reduction of profitability of production, caused by common crisis tendencies in economy. Prospects of further studies in this direction are analysis of costs in production of semiconductor products and establishment of the specific feature of their grouping and classifying from the point of view of logistics and justification of the model of assessment of cost value of products, which takes into account mutually contradictory influence of direct logistics costs and logistics management upon the final result.

  6. Cases series of malignant lymphohematopoietic disorder in korean semiconductor industry.

    Science.gov (United States)

    Kim, Eun-A; Lee, Hye-Eun; Ryu, Hyung-Woo; Park, Seung-Hyun; Kang, Seong-Kyu

    2011-06-01

    Seven cases of malignant lymphohematopoietic (LHP) disorder were claimed to have developed from occupational exposure at two plants of a semiconductor company from 2007 to 2010. This study evaluated the possibility of exposure to carcinogenic agents for the cases. Clinical courses were reviewed with assessing possible exposure to carcinogenic agents related to LHP cancers. Chemicals used at six major semiconductor companies in Korea were reviewed. Airborne monitoring for chemicals, including benzene, was conducted and the ionizing radiation dose was measured from 2008 to 2010. The latency of seven cases (five leukemiae, a Non-Hodgkin's lymphoma, and an aplastic anemia) ranged from 16 months to 15 years and 5 months. Most chemical measurements were at levels of less than 10% of the Korean Occupational Exposure Limit value. No carcinogens related to LHP cancers were used or detected. Complete-shielded radiation-generating devices were used, but the ionizing radiation doses were 0.20-0.22 uSv/hr (background level: 0.21 µSv/hr). Airborne benzene was detected at 0.31 ppb when the detection limit was lowered as low as possible. Ethylene oxide and formaldehyde were not found in the cases' processes, while these two were determined to be among the 263 chemicals in the list that was used at the six semiconductor companies at levels lower than 0.1%. Exposures occurring before 2002 could not be assessed because of the lack of information. Considering the possibility of exposure to carcinogenic agents, we could not find any convincing evidence for occupational exposure in all investigated cases. However, further study is needed because the semiconductor industry is a newly developing one.

  7. Overview of atomic layer etching in the semiconductor industry

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J., E-mail: keren.kanarik@lamresearch.com; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2015-03-15

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

  8. Overview of atomic layer etching in the semiconductor industry

    International Nuclear Information System (INIS)

    Kanarik, Keren J.; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A.

    2015-01-01

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices

  9. Educating Tomorrow's Workforce: A Report on the Semiconductor Industry's Commitment to Youth in K-12.

    Science.gov (United States)

    Semiconductor Industry Association, San Jose, CA.

    The U.S. semiconductor industry, now the nation's largest manufacturing industry, displays its commitment to training its current workers and educating future workers by supporting educational efforts on the K-12 level. This catalog describes innovative actions by 16 Semiconductor Industry Association companies to improve education at the K-12…

  10. Occupational health provision and health surveillance in the semiconductor industry.

    Science.gov (United States)

    Kinoulty, Mary; Williams, Nerys

    2006-03-01

    To identify the nature of occupational health provision in UK semiconductor-manufacturing plants. To identify the level of industry compliance with legal health surveillance requirements. A national inspection programme was carried out by Health & Safety Executive inspectors using a developed protocol. A wide range of occupational health provision was identified from none to use of an accredited specialist. The majority of work was of a reactive nature even where there was specialist occupational health input. Seven companies were identified as not meeting legal compliance and one as having unacceptable compliance for health surveillance. The spectrum of occupational health provision was very wide. Where health surveillance was provided, it was poorly targeted with limited interpretation and feedback to management.

  11. Spontaneous abortion in the British semiconductor industry: An HSE investigation. Health and Safety Executive.

    Science.gov (United States)

    Elliott, R C; Jones, J R; McElvenny, D M; Pennington, M J; Northage, C; Clegg, T A; Clarke, S D; Hodgson, J T; Osman, J

    1999-11-01

    The UK Health and Safety Executive (HSE) conducted a study to examine the risk of spontaneous abortion (SAB) in British female semiconductor industry workers, following reports from the USA which suggested an association between risk of SAB and work in fabrication rooms and/or exposure to ethylene glycol ethers. A nested case-control study based on 2,207 women who had worked at eight manufacturing sites during a 5-year retrospective time frame was established; 36 cases were matched with 80 controls. The overall SAB rate in the industry was 10.0%. (65 SABs/651 pregnancies) The crude odds ratio (OR) for fabrication work was 0.65 (95% CI 0.30-1.40). This was essentially unchanged after adjustment for a range of potential confounding factors in the first 3 months of pregnancy and was reduced to 0.58 (95% CI 0.26-1.30) after adjustment for smoking in the previous 12 months. There were no statistically significantly elevated ORs for any work group or any specific chemical or physical exposure in the industry. There is no evidence of an increased risk of SAB in the British semiconductor industry. Am. J. Ind. Med. 36:557-572, 1999. Published 1999 Wiley-Liss, Inc.

  12. Polycrystalline silicon availability for photovoltaic and semiconductor industries

    Science.gov (United States)

    Ferber, R. R.; Costogue, E. N.; Pellin, R.

    1982-01-01

    Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

  13. Production of High Value Fluorine Gases for the Semiconductor Industry

    Energy Technology Data Exchange (ETDEWEB)

    Bulko, J. B.

    2003-10-23

    The chemistry to manufacture high purity GeF{sub 4} and WF{sub 6} for use in the semiconductor industry using Starmet's new fluorine extraction technology has been developed. Production of GeF{sub 4} was established using a tube-style reactor system where conversion yields as high as 98.1% were attained for the reaction between and GeO{sub 2}. Collection of the fluoride gas improved to 97.7% when the reactor sweep gas contained a small fraction of dry air (10-12 vol%) along with helium. The lab-synthesized product was shown to contain the least amount of infrared active and elemental impurities when compared with a reference material certified at 99.99% purity. Analysis of the ''as-produced'' gas using ICP-MS showed that uranium could not be detected at a detection limit of 0.019ppm-wt. A process to make WF{sub 6} from WO{sub 2}, and UF{sub 4}, produced a WOF{sub 4} intermediate, which proved difficult to convert to tungsten hexafluoride using titanium fluoride as a fluorinating agent.

  14. Technological and organizational diversity and technical advance in the early history of the American semiconductor industry

    Science.gov (United States)

    Cohen, W.; Holbrook, D.; Klepper, S.

    1994-06-01

    This study examines the early years of the semiconductor industry and focuses on the roles played by different size firms in technologically innovative processes. A large and diverse pool of firms participated in the growth of the industry. Three related technological areas were chosen for in-depth analysis: integrated circuits, materials technology, and device packaging. Large business producing vacuum tubes dominated the early production of semiconductor devices. As the market for new devices grew during the 1950's, new firms were founded and existing firms from other industries, e.g. aircraft builders and instrument makers, began to pursue semiconductor electronics. Small firms began to cater to the emerging industry by supplying materials and equipment. These firms contributed to the development of certain aspects of one thousand firms that were playing some part in the semiconductor industry.

  15. REDUCTION OF ARSENIC WASTES IN THE SEMICONDUCTOR INDUSTRY

    Science.gov (United States)

    The research described in this report was aimed at initiating and developing processes and process modifications that could be incorporated into semiconductor manufacturing operations to accomplish pollution prevention, especially to accomplish significant reduction in the quanti...

  16. General specifications for silicon semiconductors for use in radiation dosimetry

    International Nuclear Information System (INIS)

    Rikner, G.; Grusell, E.

    1987-01-01

    Silicon semiconductor detectors used in radiation dosimetry have different properties, just as e.g. ionisation chambers, affecting the interaction of radiation with matter in the vicinity of the sensitive volume of the detector, e.g. wall materials, and also the collection of the charges liberated in the detector by the radiation. The charge collection depends on impurities, lattice imperfections and other properties of the semiconductor crystal. In this paper the relevant parameters of a silicon semiconductor detector intended for dosimetry are reviewed. The influence of doping material, doping level, various effects of radiation damage, mechanical construction, detector size, statistical noise and connection to the electrometer are discussed. (author)

  17. Industrial application of atom probe tomography to semiconductor devices

    NARCIS (Netherlands)

    Giddings, A.D.; Koelling, S.; Shimizu, Y.; Estivill, R.; Inoue, K.; Vandervorst, W.; Yeoh, W.K.

    2018-01-01

    Advanced semiconductor devices offer a metrology challenge due to their small feature size, diverse composition and intricate structure. Atom probe tomography (APT) is an emerging technique that provides 3D compositional analysis at the atomic-scale; as such, it seems uniquely suited to meet these

  18. Regulation of occupational health and safety in the semiconductor industry: enforcement problems and solutions.

    Science.gov (United States)

    Watterson, Andrew

    2006-01-01

    Reports of high incidences of occupational illnesses in the semiconductor industry should have triggered global investigations and rigorous inspection of the industry. Yet semiconductor plants remain essentially unregulated. Health and safety standards are inadequate and enforcement is lax. Roles for stakeholders in laying down good practice, monitoring, and regulating are proposed, and obstacles are described. Effective regulation has advantages for the industry as well as workers. Conditions for best practice include education at all levels, protection and support for labor inspectors, government commitment to enforcing laws, recognition of the right of workers to organize, and recognition of their rights.

  19. Electronics Industry Study Report: Semiconductors and Defense Electronics

    Science.gov (United States)

    2003-01-01

    Access Memory (DRAM) chips and microprocessors. Samsung , Micron, Hynix, and Infineon control almost three-fourths of the DRAM market,8 while Intel alone...Country 2001 Sales ($B) 2002 Sales ($B) % Change % 2002 Mkt 1 1 Intel U.S. 23.7 24.0 1% 16.9% 2 3 Samsung Semiconductor S. Korea 6.3...located in four major regions: the United States, Europe, Japan, and the Asia-Pacific region (includes South Korea, China, Singapore, Malaysia , Taiwan

  20. A study for safety and health management problem of semiconductor industry in Taiwan.

    Science.gov (United States)

    Chao, Chin-Jung; Wang, Hui-Ming; Feng, Wen-Yang; Tseng, Feng-Yi

    2008-12-01

    The main purpose of this study is to discuss and explore the safety and health management in semiconductor industry. The researcher practically investigates and interviews the input, process and output of the safety and health management of semiconductor industry by using the questionnaires and the interview method which is developed according to the framework of the OHSAS 18001. The result shows that there are six important factors for the safety and health management in Taiwan semiconductor industry. 1. The company should make employee clearly understand the safety and health laws and standards. 2. The company should make the safety and health management policy known to the public. 3. The company should put emphasis on the pursuance of the safety and health management laws. 4. The company should prevent the accidents. 5. The safety and health message should be communicated sufficiently. 6. The company should consider safety and health norm completely.

  1. Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

    International Nuclear Information System (INIS)

    Tsukamoto, Katsuhiro; Kuroi, Takashi; Kawasaki, Yoji

    2011-01-01

    Industrial aspects of the evolution of ion implantation technology will be reviewed, and their impact on the semiconductor industry will be discussed. The main topics will be the technology's application to the most advanced, ultra scaled CMOS, and to power devices, as well as productivity improvements in implantation technology. Technological insights into future developments in ion-related technologies for emerging industries will also be presented.

  2. Industrial workshop on LASL semiconductor radiation-detector research and development

    International Nuclear Information System (INIS)

    Endebrock, M.

    1978-11-01

    An Industrial Workshop on LASL Semiconductor Radiation Detector Research and Development was held at the Los Alamos Scientific Laboratory (LASL) in the spring of 1977. The purpose was to initiate communication between our detector research and development program and industry. LASL research programs were discussed with special emphasis on detector problems. Industrial needs and capabilities in detector research and development were also presented. Questions of technology transfer were addressed. The notes presented here are meant to be informal, as were the presentations

  3. The Semiconductor Industry and Emerging Technologies: A Study Using a Modified Delphi Method

    Science.gov (United States)

    Jordan, Edgar A.

    2010-01-01

    The purpose of this qualitative descriptive study was to determine what leaders in the semiconductor industry thought the future of computing would look like and what emerging materials showed the most promise to overcome the current theoretical limit of 10 nanometers for silicon dioxide. The researcher used a modified Delphi technique in two…

  4. The impact of semiconductor, electronics and optoelectronic industries on downstream perfluorinated chemical contamination in Taiwanese rivers

    International Nuclear Information System (INIS)

    Lin, Angela Yu-Chen; Panchangam, Sri Chandana; Lo, Chao-Chun

    2009-01-01

    This study provides the first evidence on the influence of the semiconductor and electronics industries on perfluorinated chemicals (PFCs) contamination in receiving rivers. We have quantified ten PFCs, including perfluoroalkyl sulfonates (PFASs: PFBS, PFHxS, PFOS) and perfluoroalkyl carboxylates (PFCAs: PFHxA, PFHpA, PFOA, PFNA, PFDA, PFUnA, PFDoA) in semiconductor, electronic, and optoelectronic industrial wastewaters and their receiving water bodies (Taiwan's Keya, Touchien, and Xiaoli rivers). PFOS was found to be the major constituent in semiconductor wastewaters (up to 0.13 mg/L). However, different PFC distributions were found in electronics plant wastewaters; PFOA was the most significant PFC, contributing on average 72% to the effluent water samples, followed by PFOS (16%) and PFDA (9%). The distribution of PFCs in the receiving rivers was greatly impacted by industrial sources. PFOS, PFOA and PFDA were predominant and prevalent in all the river samples, with PFOS detected at the highest concentrations (up to 5.4 μg/L). - The semiconductor, electronics and optoelectronic industries are the primary source of PFC contamination in downstream aqueous environments

  5. Product innovation and persistence of leadership: theory with evidence from the semiconductor industry

    OpenAIRE

    Harald Gruber

    1990-01-01

    This paper sets out to model the evolution of market shares in the semiconductor industry. The time profile of market shares for different firms in this industry has shown a striking regularity over successive generations of products. In a model of vertical product differentiation three distinct patterns of market shares emerge as an equilibrium outcome, reflecting three distinct strategies in respect of timing of entry into new generations. The main novelty of the model developed here, relat...

  6. The relationship between spontaneous abortion and female workers in the semiconductor industry.

    Science.gov (United States)

    Kim, Heechan; Kwon, Ho-Jang; Rhie, Jeongbae; Lim, Sinye; Kang, Yun-Dan; Eom, Sang-Yong; Lim, Hyungryul; Myong, Jun-Pyo; Roh, Sangchul

    2017-01-01

    This study investigated the relationship between job type and the risk for spontaneous abortion to assess the reproductive toxicity of female workers in the semiconductor industry. A questionnaire survey was administered to current female workers of two semiconductor manufacturing plants in Korea. We included female workers who became pregnant at least 6 months after the start of their employment with the company. The pregnancy outcomes of 2,242 female workers who experienced 4,037 pregnancies were investigated. Personnel records were used to assign the subjects to one of three groups: fabrication process workers, packaging process workers, and clerical workers. To adjust for within-person correlations between pregnancies, a generalized estimating equation was used. The logistic regression analysis was limited to the first pregnancy after joining the company to satisfy the assumption of independence among pregnancies. Moreover, we stratified the analysis by time period (pregnancy in the years prior to 2008 vs. after 2009) to reflect differences in occupational exposure based on semiconductor production periods. The risk for spontaneous abortion in female semiconductor workers was not significantly higher for fabrication and packaging process workers than for clerical workers. However, when we stratified by time period, the odds ratio for spontaneous abortion was significantly higher for packaging process workers who became pregnant prior to 2008 when compared with clerical workers (odds ratio: 2.21; 95% confidence interval: 1.01-4.81). When examining the pregnancies of female semiconductor workers that occurred prior to 2008, packaging process workers showed a significantly higher risk for spontaneous abortions than did clerical workers. The two semiconductor production periods in our study (prior to 2008 vs. after 2009) had different automated processes, chemical exposure levels, and working environments. Thus, the conditions prior to 2008 may have increased the

  7. From Confrontation to Coopetition in the Globalized Semiconductor Industry

    NARCIS (Netherlands)

    van de Gevel, A.J.W.

    2000-01-01

    The silicon chip is not only a symbol of marvellous technologies that are transforming industrial production and leisure time in society, but also of trade and technology conflicts while at the same time offering the potential for cooperation.The purpose of this paper is to show that the

  8. Leukemia and non-Hodgkin lymphoma in semiconductor industry workers in Korea.

    Science.gov (United States)

    Kim, Inah; Kim, Hyun J; Lim, Sin Y; Kongyoo, Jungok

    2012-01-01

    Reports of leukemia and non-Hodgkin lymphoma (NHL), cancers known to have a similar pathophysiology, among workers in the semiconductor industry have generated much public concern in Korea. This paper describes cases reported to the NGO Supporters for the Health and Rights of People in the Semiconductor Industry (SHARPs). We identified demographic characteristics, occupational, and disease history, for 17 leukemia and NHL cases from the Giheung Samsung semiconductor plant, diagnosed from November 2007 to January 2011. Patients were relatively young (mean = 28·5 years, SD = 6·5) at the time of diagnosis and the mean latency period was 104·3 months (SD = 65·8). Majority of the cases were fabrication operators (11 workers among 17) and 12 were hired before 2000. Six cases worked in the etching or diffusion process. The evidence to confirm the causal relationship between exposures in the semiconductor industry and leukemia or NHL remains insufficient and a more formal, independent study of the exposure-disease relationship in this occupation is needed. However, workers should be protected from the potential exposures immediately.

  9. SPECIFICITY IN DEVELOPMENT OF CONSTRUCTION INDUSTRY

    Directory of Open Access Journals (Sweden)

    O. S. Golubova

    2012-01-01

    Full Text Available Specificity in development of construction industry of the Republic of Belarus determines  character of competition on the construction market, forms a pricing, marketing and product policy of building companies. Construction represents itself as a highly developed complex where interaction of business entities is of rather complicated multilateral character.

  10. Profile of the worldwide semiconductor industry market prospects to 1997

    CERN Document Server

    Fletcher, A

    1995-01-01

    Please note this is a Short Discount publication. The prolongation of global recession continues to have a significant impact on this core sector of the electronics industry, compelling many manufacturers to review their operations and business strategies. Fierce competition and the need to reduce costs have resulted in many companies cutting back on commercial sales to concentrate on vertically integrated manufacturing or in new alliances being forged to strengthen product portfolios whilst minimising R & D costs. This updated sixth edition of the report charts indust

  11. Hydrogen-bond Specific Materials Modification in Group IV Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Tolk, Norman H. [Vanderbilt Univ., Nashville, TN (United States); Feldman, L. C. [Vanderbilt Univ., Nashville, TN (United States); Luepke, G. [College of William and Mary, Williamsburg, VA (United States)

    2015-09-14

    Executive summary Semiconductor dielectric crystals consist of two fundamental components: lattice atoms and electrons. The former component provides a crystalline structure that can be disrupted by various defects or the presence of an interface, or by transient oscillations known as phonons. The latter component produces an energetic structure that is responsible for the optical and electronic properties of the material, and can be perturbed by lattice defects or by photo-excitation. Over the period of this project, August 15, 1999 to March 31, 2015, a persistent theme has been the elucidation of the fundamental role of defects arising from the presence of radiation damage, impurities (in particular, hydrogen), localized strain or some combination of all three. As our research effort developed and evolved, we have experienced a few title changes, which reflected this evolution. Throughout the project, ultrafast lasers usually in a pump-probe configuration provided the ideal means to perturb and study semiconductor crystals by both forms of excitation, vibrational (phonon) and electronic (photon). Moreover, we have found in the course of this research that there are many interesting and relevant scientific questions that may be explored when phonon and photon excitations are controlled separately. Our early goals were to explore the dynamics of bond-selective vibrational excitation of hydrogen from point defects and impurities in crystalline and amorphous solids, initiating an investigation into the behavior of hydrogen isotopes utilizing a variety of ultrafast characterization techniques, principally transient bleaching spectroscopy to experimentally obtain vibrational lifetimes. The initiative could be divided into three related areas: (a) investigation of the change in electronic structure of solids due to the presence of hydrogen defect centers, (b) dynamical studies of hydrogen in materials and (c) characterization and stability of metastable hydrogen

  12. Metabolomic and proteomic biomarkers for III-V semiconductors: Chemical-specific porphyrinurias and proteinurias

    International Nuclear Information System (INIS)

    Fowler, Bruce A.; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2005-01-01

    A pressing need exists to develop and validate molecular biomarkers to assess the early effects of chemical agents, both individually and in mixtures. This is particularly true for new and chemically intensive industries such as the semiconductor industry. Previous studies from this laboratory and others have demonstrated element-specific alterations of the heme biosynthetic pathway for the III-V semiconductors gallium arsenide (GaAs) and indium arsenide (InAs) with attendant increased urinary excretion of specific heme precursors. These data represent an example of a metabolomic biomarker to assess chemical effects early, before clinical disease develops. Previous studies have demonstrated that the intratracheal or subcutaneous administration of GaAs and InAs particles to hamsters produces the induction of the major stress protein gene families in renal proximal tubule cells. This was monitored by 35-S methionine labeling of gene products followed by two-dimensional gel electrophoresis after exposure to InAs particles. The present studies examined whether these effects were associated with the development of compound-specific proteinuria after 10 or 30 days following subcutaneous injection of GaAs or InAs particles in hamsters. The results of these studies demonstrated the development of GaAs- and InAs-specific alterations in renal tubule cell protein expression patterns that varied at 10 and 30 days. At the 30-day point, cells in hamsters that received InAs particles showed marked attenuation of protein expression, suggesting inhibition of the stress protein response. These changes were associated with GaAs and InAs proteinuria patterns as monitored by two-dimensional gel electrophoresis and silver staining. The intensity of the protein excretion patterns increased between the 10- and 30-day points and was most pronounced for animals in the 30-day InAs treatment group. No overt morphologic signs of cell death were seen in renal tubule cells of these animals

  13. The impact of semiconductor, electronics and optoelectronic industries on downstream perfluorinated chemical contamination in Taiwanese rivers.

    Science.gov (United States)

    Lin, Angela Yu-Chen; Panchangam, Sri Chandana; Lo, Chao-Chun

    2009-04-01

    This study provides the first evidence on the influence of the semiconductor and electronics industries on perfluorinated chemicals (PFCs) contamination in receiving rivers. We have quantified ten PFCs, including perfluoroalkyl sulfonates (PFASs: PFBS, PFHxS, PFOS) and perfluoroalkyl carboxylates (PFCAs: PFHxA, PFHpA, PFOA, PFNA, PFDA, PFUnA, PFDoA) in semiconductor, electronic, and optoelectronic industrial wastewaters and their receiving water bodies (Taiwan's Keya, Touchien, and Xiaoli rivers). PFOS was found to be the major constituent in semiconductor wastewaters (up to 0.13 mg/L). However, different PFC distributions were found in electronics plant wastewaters; PFOA was the most significant PFC, contributing on average 72% to the effluent water samples, followed by PFOS (16%) and PFDA (9%). The distribution of PFCs in the receiving rivers was greatly impacted by industrial sources. PFOS, PFOA and PFDA were predominant and prevalent in all the river samples, with PFOS detected at the highest concentrations (up to 5.4 microg/L).

  14. Specifications from a biotechnology industry perspective.

    Science.gov (United States)

    Garnick, R L

    1997-01-01

    The emergence of new analytical technology and the production of pharmaceuticals for a global market in a cost-effective manner necessitate the establishment of worldwide specifications that are appropriate for the product and the manufacturing process. This requires a thorough knowledge of the protein and control of the systems that produce it as well as an understanding of the accuracy and precision of the assays used for testing. Harmonization of specifications among the worldwide regulatory authorities is critical for the future development of new pharmaceuticals. A continuing dialogue between industry and regulators to achieve this goal needs to be encouraged and supported.

  15. Specific heat of ZnCoSe semimagnetic semiconductor

    NARCIS (Netherlands)

    Twardowski, A.; Swagten, H.J.M.; Jonge, de W.J.M.; Demianiuk, M.

    1990-01-01

    The magnetic specific heat of ZnCoSe data are reported in the temperature range 1.5

  16. Specific heat of Cr-based semimagnetic semiconductors

    NARCIS (Netherlands)

    Twardowski, A.; Eggenkamp, P.J.T.; Mac, W.; Swagten, H.J.M.; Demianiuk, M.

    1993-01-01

    Specific heat of ZnCrSe and ZnCrS was measured for 1.5

  17. Competitive-cum-cooperative interfirm relations and dynamics in the Japanese semiconductor industry

    CERN Document Server

    Okada, Yoshitaka

    2000-01-01

    Japanese semiconductor firms are well known for obtaining dynamics in a short period of time and achieving even global leadership. A significant portion of their success are attributable to cooperative interfirm relations and the development of intermediate organizational structure based on long-term relationship between firms. The purpose of this book is to explain how interfirm relations contributed to their dynamics during the golden age of the semiconductor industry. Meanwhile this book clarifies the real source of dynamics in interfirm relations and how the firms have interacted. The author concludes that the competitive-cum-cooperative (CCC) interfirm interaction are observed. Quantitative and qualitative findings show that firms enjoy not only flexible cooperation based synergy effects, but also dynamics market-like effects by creating competition among partners through CCC interaction.

  18. Distribution of volatile organic compounds over a semiconductor Industrial Park in Taiwan.

    Science.gov (United States)

    Chiu, Kong-Hwa; Wu, Ben-Zen; Chang, Chih-Chung; Sree, Usha; Lo, Jiunn-Guang

    2005-02-15

    This study examined volatile organic compounds (VOC) concentration in ambient air collected during the years 2000--2003 at several different locations of Hsinchu Science-based Industrial Park (HSIP) in Taiwan. A canister automated GC-MS system analyzed the volatile organics in ambient air grasp samples according to T0-15 method. Oxygenated volatiles were the most abundant VOC detected in HSIP followed by aromatics that are commonly used as solvents in the semiconductor industries. The major components measured in the ambient air are 2-propanol (29-135 ppbv), acetone (12-164 ppbv), benzene (0.7-1.7 ppbv), and toluene (13-20 ppbv). At some of the sampling locations, odorous compounds such as carbon disulfide and dimethyl sulfide levels exceed threshold values. The estimated toluene/benzene ratio is very high at most of the sites. However, the total amount of VOC is reduced over the years from 2000 to 2003 due to strict implementation on use and discharge of solvents in industries. There exists no definite seasonal pattern for sporadic occurrence of high levels of some of the volatile organics. Stagnant weather conditions with low wind speeds aid accumulation of toxic species at ground level. The results entail that hi-tech semiconductor industries are still a potential source for harmful organic substances to surrounding microenvironment.

  19. Development of industrial variant specification systems

    DEFF Research Database (Denmark)

    Hansen, Benjamin Loer

    be developed from a holistic and strategically anchored point of view. Another assumption is that this is a challenge for many industrial companies. Even though the literature presents many considerations on general issues covering new information technology, little work is found on the business perspectives...... are discussed. A list of structural variables and solution components has been created. These are related to four design aspects in the holistic system design covering the aspects of process design, selection of resources (such as hardware, software and humans), the design of information structures...... solution elements and structural variables to be used in the design of variant specification systems. The thesis presents a “top-down” procedure to be used to develop variant specification systems from a strategically anchored and holistic point of view. A methodology and related task variables...

  20. The FinFET Breakthrough and Networks of Innovation in the Semiconductor Industry, 1980-2005: Applying Digital Tools to the History of Technology.

    Science.gov (United States)

    O'Reagan, Douglas; Fleming, Lee

    2018-01-01

    The "FinFET" design for transistors, developed at the University of California, Berkeley, in the 1990s, represented a major leap forward in the semiconductor industry. Understanding its origins and importance requires deep knowledge of local factors, such as the relationships among the lab's principal investigators, students, staff, and the institution. It also requires understanding this lab within the broader network of relationships that comprise the semiconductor industry-a much more difficult task using traditional historical methods, due to the paucity of sources on industrial research. This article is simultaneously 1) a history of an impactful technology and its social context, 2) an experiment in using data tools and visualizations as a complement to archival and oral history sources, to clarify and explore these "big picture" dimensions, and 3) an introduction to specific data visualization tools that we hope will be useful to historians of technology more generally.

  1. Prolonged menstrual cycles in female workers exposed to ethylene glycol ethers in the semiconductor manufacturing industry.

    Science.gov (United States)

    Hsieh, G-Y; Wang, J-D; Cheng, T-J; Chen, P-C

    2005-08-01

    It has been shown that female workers exposed to ethylene glycol ethers (EGEs) in the semiconductor industry have higher risks of spontaneous abortion, subfertility, and menstrual disturbances, and prolonged waiting time to pregnancy. To examine whether EGEs or other chemicals are associated with long menstrual cycles in female workers in the semiconductor manufacturing industry. Cross-sectional questionnaire survey during the annual health examination at a wafer manufacturing company in Taiwan in 1997. A three tiered exposure-assessment strategy was used to analyse the risk. A short menstrual cycle was defined to be a cycle less than 24 days and a long cycle to be more than 35 days. There were 606 valid questionnaires from 473 workers in fabrication jobs and 133 in non-fabrication areas. Long menstrual cycles were associated with workers in fabrication areas compared to those in non-fabrication areas. Using workers in non-fabrication areas as referents, workers in photolithography and diffusion areas had higher risks for long menstrual cycles. Workers exposed to EGEs and isopropanol, and hydrofluoric acid, isopropanol, and phosphorous compounds also showed increased risks of a long menstrual cycle. Exposure to multiple chemicals, including EGEs in photolithography, might be associated with long menstrual cycles, and may play an important role in a prolonged time to pregnancy in the wafer manufacturing industry; however, the prevalence in the design, possible exposure misclassification, and chance should be considered.

  2. The Study of an Integrated Rating System for Supplier Quality Performance in the Semiconductor Industry

    Science.gov (United States)

    Lee, Yu-Cheng; Yen, Tieh-Min; Tsai, Chih-Hung

    This study provides an integrated model of Supplier Quality Performance Assesment (SQPA) activity for the semiconductor industry through introducing the ISO 9001 management framework, Importance-Performance Analysis (IPA) Supplier Quality Performance Assesment and Taguchi`s Signal-to-Noise Ratio (S/N) techniques. This integrated model provides a SQPA methodology to create value for all members under mutual cooperation and trust in the supply chain. This method helps organizations build a complete SQPA framework, linking organizational objectives and SQPA activities to optimize rating techniques to promote supplier quality improvement. The techniques used in SQPA activities are easily understood. A case involving a design house is illustrated to show our model.

  3. 10 CFR 34.13 - Specific license for industrial radiography.

    Science.gov (United States)

    2010-01-01

    ... 10 Energy 1 2010-01-01 2010-01-01 false Specific license for industrial radiography. 34.13 Section 34.13 Energy NUCLEAR REGULATORY COMMISSION LICENSES FOR INDUSTRIAL RADIOGRAPHY AND RADIATION SAFETY... industrial radiography. An application for a specific license for the use of licensed material in industrial...

  4. A TOE Approach to Establish a Green Supply Chain Adoption Decision Model in the Semiconductor Industry

    Directory of Open Access Journals (Sweden)

    Bang-Ning Hwang

    2016-02-01

    Full Text Available The green supply chain is an innovation that extends traditional sustainability initiatives to environmental activities in the supply chain and aims to minimize a product’s environmental impact throughout its life cycle. The adoption of a green supply chain involves a complex decision-making process characterized by multiple criteria. The goal of the current study is to construct a decision framework by identifying a comprehensive set of consideration factors and their causal relationships. The consideration factors are deliberately drawn from a variety of different, yet related, theories and are grouped into an extensive Technology-Organization -Environment (TOE framework. In accordance with the Decision Making Trial and Evaluation Laboratory (DEMATEL method, the decision framework was analyzed for appropriateness through surveys of selected experts in the semiconductor industry. Because the semiconductor industry has a long history of heavy resource usage and has proven an early advocate of green supply chains, results from this study can provide insights to other firms with similar operations and aims. The contributions of this research are twofold. First, its theoretical contribution consists of integrating previously separate strands of different theories into a holistic framework and exploring the causal relationships among decision factors. Second, its practical contribution lies in its establishment of a strategic path that provides firms a set of priorities when adopting green supply chains.

  5. Recovery of hazardous semiconductor-industry sludge as a useful resource.

    Science.gov (United States)

    Lee, Tzen-Chin; Liu, Feng-Jiin

    2009-06-15

    Sludge, a solid waste recovered from wastewater of semiconductor-industries composes of agglomerates of nano-particles like SiO(2) and CaF(2). This sludge deflocculates in acidic and alkaline aqueous solutions into nano-particles smaller than 100 nm. Thus, this sludge is potentially hazardous to water resources when improperly dumped. It can cause considerable air-pollution when fed into rotary-kilns as a raw material for cement production. In this study, dried and pulverized sludge was used to replace 5-20 wt.% Portland cement in cement mortar. The compressive strength of the modified mortar was higher than that of plain cement mortar after curing for 3 days and more. In particular, the strength of mortar with 10 wt.% substitution improved by 25-35% after curing for 7-90 days. TCLP studies reveal no detectable release of heavy metals. Preliminary studies showed that nano-particles deflocculated from the sludge, when cured for up to 3 days retain in the modified mortar their nano-size, which become large-sized hydration compounds that contribute to the final mortar strength. Semiconductor sludge can thus be utilized as a useful resource to replace portion of cement in cement mortar, thereby avoiding their potential hazard on the environment.

  6. Optics education for machine operators in the semiconductor industry: moving beyond button pushing

    Science.gov (United States)

    Karakekes, Meg; Currier, Deborah

    1995-10-01

    In the competitive semiconductor manufacturing industry, employees who operate equipment are able to make greater contributions if they understand how the equipment works. By understanding the 'why' behind the 'what', the equipment operators can better partner with other technical staff to produce quality integrated circuits efficiently and effectively. This additional knowledge also opens equipment operators to job enrichment and enlargement opportunities. Advanced Micro Devices (AMD) is in the process of upgrading the skills of its equipment operators. This paper is an overview of a pilot program that employs optics education to upgrade stepper operators' skills. The paper starts with stepper tasks that require optics knowledge, examines teaching methods, reports both end-of-course and three months post-training knowledge retention, and summarizes how the training has impacted the production floor.

  7. Horizontal integration in markets for complementary components and vertical product differentiation: A case-based analysis in the semiconductor industry

    NARCIS (Netherlands)

    Westbrock, B.

    2005-01-01

    Observations of recent mergers and acquisitions (M&A) in the semiconductor and computer industry indicate that activities concentrate on the technology leaders in this market. The author examines the influence of players’ heterogeneous product technologies on their involvement in M&A. He provides a

  8. The Structuring of Shared Voluntary Standards in the U.S. Semiconductor Industry: Communicating to Reach Agreement.

    Science.gov (United States)

    Browning, Larry D.; Beyer, Janice M.

    1998-01-01

    Contributes to scholarship on organizational communication by tracing how voluntary cooperative standards were developed for the semiconductor industry through reflexive communication processes initiated by the SEMATECH consortium. Analyzes seven pivotal incidents that show how increased communication produced new provinces of meaning, actions,…

  9. CANDIED WATERMELON. INDUSTRIAL RAW MATERIALS (SPECIFICATIONS

    Directory of Open Access Journals (Sweden)

    L. V. Pavlov

    2016-01-01

    Full Text Available The purpose of the standard is the valuation of the indicators of quality of candied fruit watermelon, cooked in sugar syrup, dried and coated in granulated sugar intended for industrial processing and nutrition. This standard is developed for the first time in the Russian Federation.

  10. Fundamental Characteristics of Industrial Variant Specification Systems

    DEFF Research Database (Denmark)

    Hansen, Benjamin Loer; Hvam, Lars

    2004-01-01

    fundamental concepts related to this task, which are relevant to understand for academia and practitioners working with the subject. This is done through a description of variant specification tasks and typical aspects of system solutions. To support the description of variant specification tasks and systems...

  11. High-resolution X-ray imaging - a powerful nondestructive technique for applications in semiconductor industry

    International Nuclear Information System (INIS)

    Zschech, Ehrenfried; Yun, Wenbing; Schneider, Gerd

    2008-01-01

    The availability of high-brilliance X-ray sources, high-precision X-ray focusing optics and very efficient CCD area detectors has contributed essentially to the development of transmission X-ray microscopy (TXM) and X-ray computed tomography (XCT) with sub-50 nm resolution. Particularly, the fabrication of high aspect ratio Fresnel zone plates with zone widths approaching 15 nm has contributed to the enormous improvement in spatial resolution during the previous years. Currently, Fresnel zone plates give the ability to reach spatial resolutions of 15 to 20 nm in the soft and of about 30 to 50 nm in the hard X-ray energy range. X-ray microscopes with rotating anode X-ray sources that can be installed in an analytical lab next to a semiconductor fab have been developed recently. These unique TXM/XCT systems provide an important new capability of nondestructive 3D imaging of internal circuit structures without destructive sample preparation such as cross sectioning. These lab systems can be used for failure localization in micro- and nanoelectronic structures and devices, e.g., to visualize voids and residuals in on-chip metal interconnects without physical modification of the chip. Synchrotron radiation experiments have been used to study new processes and materials that have to be introduced into the semiconductor industry. The potential of TXM using synchrotron radiation in the soft X-ray energy range is shown for the nondestructive in situ imaging of void evolution in embedded on-chip copper interconnect structures during electromigration and for the imaging of different types of insulating thin films between the on-chip interconnects (spectromicroscopy). (orig.)

  12. Horizontal integration in markets for complementary components and vertical product differentiation: A case-based analysis in the semiconductor industry

    OpenAIRE

    Westbrock, B.

    2005-01-01

    Observations of recent mergers and acquisitions (M&A) in the semiconductor and computer industry indicate that activities concentrate on the technology leaders in this market. The author examines the influence of players’ heterogeneous product technologies on their involvement in M&A. He provides a rationale for the influence with the help of a case study and a two-stage non cooperative game. The case is about an acquisition wave between suppliers in two semiconductor component markets. Exe...

  13. Environmental and workplace contamination in the semiconductor industry: implications for future health of the workforce and community.

    Science.gov (United States)

    Edelman, P

    1990-01-01

    The semiconductor industry has been an enormous worldwide growth industry. At the heart of computer and other electronic technological advances, the environment in and around these manufacturing facilities has not been scrutinized to fully detail the health effects to the workers and the community from such exposures. Hazard identification in this industry leads to the conclusion that there are many sources of potential exposure to chemicals including arsenic, solvents, photoactive polymers and other materials. As the size of the semiconductor work force expands, the potential for adverse health effects, ranging from transient irritant symptoms to reproductive effects and cancer, must be determined and control measures instituted. Risk assessments need to be effected for areas where these facilities conduct manufacturing. The predominance of women in the manufacturing areas requires evaluating the exposures to reproductive hazards and outcomes. Arsenic exposures must also be evaluated and minimized, especially for maintenance workers; evaluation for lung and skin cancers is also appropriate. PMID:2401268

  14. Optimal design of advanced distillation configuration for enhanced energy efficiency of waste solvent recovery process in semiconductor industry

    International Nuclear Information System (INIS)

    Chaniago, Yus Donald; Minh, Le Quang; Khan, Mohd Shariq; Koo, Kee-Kahb; Bahadori, Alireza; Lee, Moonyong

    2015-01-01

    Highlights: • Thermally coupled distillation process is proposed for waste solvent recovery. • A systematic optimization procedure is used to optimize distillation columns. • Response surface methodology is applied to optimal design of distillation column. • Proposed advanced distillation allows energy efficient waste solvent recovery. - Abstract: The semiconductor industry is one of the largest industries in the world. On the other hand, the huge amount of solvent used in the industry results in high production cost and potential environmental damage because most of the valuable chemicals discharged from the process are incinerated at high temperatures. A distillation process is used to recover waste solvent, reduce the production-related costs and protect the environment from the semiconductor industrial waste. Therefore, in this study, a distillation process was used to recover the valuable chemicals from semiconductor industry discharge, which otherwise would have been lost to the environment. The conventional sequence of distillation columns, which was optimized using the Box and sequential quadratic programming method for minimum energy objectives, was used. The energy demands of a distillation problem may have a substantial influence on the profitability of a process. A thermally coupled distillation and heat pump-assisted distillation sequence was implemented to further improve the distillation performance. Finally, a comparison was made between the conventional and advanced distillation sequences, and the optimal conditions for enhancing recovery were determined. The proposed advanced distillation configuration achieved a significant energy saving of 40.5% compared to the conventional column sequence

  15. Product manufacturing, quality, and reliability initiatives to maintain a competitive advantage and meet customer expectations in the semiconductor industry

    Science.gov (United States)

    Capps, Gregory

    Semiconductor products are manufactured and consumed across the world. The semiconductor industry is constantly striving to manufacture products with greater performance, improved efficiency, less energy consumption, smaller feature sizes, thinner gate oxides, and faster speeds. Customers have pushed towards zero defects and require a more reliable, higher quality product than ever before. Manufacturers are required to improve yields, reduce operating costs, and increase revenue to maintain a competitive advantage. Opportunities exist for integrated circuit (IC) customers and manufacturers to work together and independently to reduce costs, eliminate waste, reduce defects, reduce warranty returns, and improve quality. This project focuses on electrical over-stress (EOS) and re-test okay (RTOK), two top failure return mechanisms, which both make great defect reduction opportunities in customer-manufacturer relationship. Proactive continuous improvement initiatives and methodologies are addressed with emphasis on product life cycle, manufacturing processes, test, statistical process control (SPC), industry best practices, customer education, and customer-manufacturer interaction.

  16. Specification process reengineering: concepts and experiences from Danish industry

    DEFF Research Database (Denmark)

    Hansen, Benjamin Loer; Riis, Jesper; Hvam, Lars

    2003-01-01

    This paper presents terminologies and concepts related to the IT automation of specification processes in companies manufacturing custom made products. Based on 11 cases from the Danish industry the most significant development trends are discussed.......This paper presents terminologies and concepts related to the IT automation of specification processes in companies manufacturing custom made products. Based on 11 cases from the Danish industry the most significant development trends are discussed....

  17. Next generation of decision making software for nanopatterns characterization: application to semiconductor industry

    Science.gov (United States)

    Dervilllé, A.; Labrosse, A.; Zimmermann, Y.; Foucher, J.; Gronheid, R.; Boeckx, C.; Singh, A.; Leray, P.; Halder, S.

    2016-03-01

    The dimensional scaling in IC manufacturing strongly drives the demands on CD and defect metrology techniques and their measurement uncertainties. Defect review has become as important as CD metrology and both of them create a new metrology paradigm because it creates a completely new need for flexible, robust and scalable metrology software. Current, software architectures and metrology algorithms are performant but it must be pushed to another higher level in order to follow roadmap speed and requirements. For example: manage defect and CD in one step algorithm, customize algorithms and outputs features for each R&D team environment, provide software update every day or every week for R&D teams in order to explore easily various development strategies. The final goal is to avoid spending hours and days to manually tune algorithm to analyze metrology data and to allow R&D teams to stay focus on their expertise. The benefits are drastic costs reduction, more efficient R&D team and better process quality. In this paper, we propose a new generation of software platform and development infrastructure which can integrate specific metrology business modules. For example, we will show the integration of a chemistry module dedicated to electronics materials like Direct Self Assembly features. We will show a new generation of image analysis algorithms which are able to manage at the same time defect rates, images classifications, CD and roughness measurements with high throughput performances in order to be compatible with HVM. In a second part, we will assess the reliability, the customization of algorithm and the software platform capabilities to follow new specific semiconductor metrology software requirements: flexibility, robustness, high throughput and scalability. Finally, we will demonstrate how such environment has allowed a drastic reduction of data analysis cycle time.

  18. Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution

    International Nuclear Information System (INIS)

    Cooper, David; Hartmann, Jean Michel; Carron, Veronique; Béché, Armand; Rouvière, Jean-Luc

    2010-01-01

    There is a requirement of the semiconductor industry to measure strain in semiconductor devices with nm-scale resolution. Here we show that dark-field electron holography and nanobeam electron diffraction (NBED) are both complementary techniques that can be used to determine the strain in these devices. We show two-dimensional strain maps acquired by dark holography and line profiles that have been acquired by NBED of recessed SiGe sources and drains with a variety of different gate lengths and Ge concentrations. We have also used dark-field electron holography to measure the evolution in strain during the silicidation process, showing that this can reduce the applied uniaxial compressive strain in the conduction channel by up to a factor of 3

  19. Ergonomic risk factors of work processes in the semiconductor industry in Peninsular Malaysia.

    Science.gov (United States)

    Chee, Heng-Leng; Rampal, Krishna Gopal; Chandrasakaran, Abherhame

    2004-07-01

    A cross-sectional survey of semiconductor factories was conducted to identify the ergonomic risk factors in the work processes, the prevalence of body pain among workers, and the relationship between body pain and work processes. A total of 906 women semiconductor workers took part in the study. In wafer preparation and polishing, a combination of lifting weights and prolonged standing might have led to high pain prevalences in the low back (35.0% wafer preparation, 41.7% wafer polishing) and lower limbs (90.0% wafer preparation, 66.7% wafer polishing). Semiconductor front of line workers, who mostly walked around to operate machines in clean rooms, had the lowest prevalences of body pain. Semiconductor assembly middle of line workers, especially the molding workers, who did frequent lifting, had high pain prevalences in the neck/shoulders (54.8%) and upper back (43.5 %). In the semiconductor assembly end of line work section, chip inspection workers who were exposed to prolonged sitting without back support had high prevalences of neck/shoulder (62.2%) and upper back pain (50.0%), while chip testing workers who had to climb steps to load units had a high prevalence of lower limb pain (68.0%). Workers in the assembly of electronic components, carrying out repetitive tasks with hands and fingers, and standing in awkward postures had high pain prevalences in the neck/shoulders (61.5%), arms (38.5%), and hands/wrists (30.8%).

  20. SPECIFITY OF REDEVELOPMENT OF INEFFICIENTLY USED INDUSTRIAL TERRITORIES

    Directory of Open Access Journals (Sweden)

    KOVALOV V. V.

    2017-05-01

    Full Text Available Raising of problem. In modern conditions of urban construction, the problem arises of searching for land for a new building. However, the most attractive land plots from the investment point of view are often occupied, including the industrial plants placed on them, many of which do not function. Redevelopment of industrial areas will effectively control the development of the urban environment in accordance with the requirements of the time. Purpose of the aricle. Determination of specific features of the formation of lofts as new elements of the urban environment in the redevelopment of inefficienly used industrial areas. Conclusion. When reconstructing urban degraded industrial areas, it is necessary to place residential objects in addition to commercial real estate objects, the expediency of which is confirmed by the world experience of redevelopment of industrial territories.

  1. A model to systematically employ professional judgment in the Bayesian Decision Analysis for a semiconductor industry exposure assessment.

    Science.gov (United States)

    Torres, Craig; Jones, Rachael; Boelter, Fred; Poole, James; Dell, Linda; Harper, Paul

    2014-01-01

    Bayesian Decision Analysis (BDA) uses Bayesian statistics to integrate multiple types of exposure information and classify exposures within the exposure rating categorization scheme promoted in American Industrial Hygiene Association (AIHA) publications. Prior distributions for BDA may be developed from existing monitoring data, mathematical models, or professional judgment. Professional judgments may misclassify exposures. We suggest that a structured qualitative risk assessment (QLRA) method can provide consistency and transparency in professional judgments. In this analysis, we use a structured QLRA method to define prior distributions (priors) for BDA. We applied this approach at three semiconductor facilities in South Korea, and present an evaluation of the performance of structured QLRA for determination of priors, and an evaluation of occupational exposures using BDA. Specifically, the structured QLRA was applied to chemical agents in similar exposure groups to identify provisional risk ratings. Standard priors were developed for each risk rating before review of historical monitoring data. Newly collected monitoring data were used to update priors informed by QLRA or historical monitoring data, and determine the posterior distribution. Exposure ratings were defined by the rating category with the highest probability--i.e., the most likely. We found the most likely exposure rating in the QLRA-informed priors to be consistent with historical and newly collected monitoring data, and the posterior exposure ratings developed with QLRA-informed priors to be equal to or greater than those developed with data-informed priors in 94% of comparisons. Overall, exposures at these facilities are consistent with well-controlled work environments. That is, the 95th percentile of exposure distributions are ≤50% of the occupational exposure limit (OEL) for all chemical-SEG combinations evaluated; and are ≤10% of the limit for 94% of chemical-SEG combinations evaluated.

  2. XPS and angle resolved XPS, in the semiconductor industry: Characterization and metrology control of ultra-thin films

    International Nuclear Information System (INIS)

    Brundle, C.R.; Conti, Giuseppina; Mack, Paul

    2010-01-01

    This review discusses the development of X-ray photoelectron spectroscopy, XPS, used as a characterization and metrology method for ultra-thin films in the semiconductor wafer processing industry. After a brief explanation of how the relative roles of XPS and Auger electron spectroscopy, AES, have changed over the last 15 years or so in the semiconductor industry, we go into some detail as to what is implied by metrology, as opposed to characterization, for thin films in the industry, and then describe how XPS, and particularly angle resolved XPS, ARXPS, have been implemented as a metrology 'tool' for thickness, chemical composition, and non-destructive depth profiling, of transistor gate oxide material, a key requirement in front-end processing. We take a historical approach, dealing first with the early use for SiO 2 films on Si(1 0 0), then moving to silicon oxynitride, SiO x N y in detail, and finally and briefly HfO 2 -based material, which is used today in the most advanced devices (32 nm node).

  3. Industry

    Energy Technology Data Exchange (ETDEWEB)

    Bernstein, Lenny; Roy, Joyashree; Delhotal, K. Casey; Harnisch, Jochen; Matsuhashi, Ryuji; Price, Lynn; Tanaka, Kanako; Worrell, Ernst; Yamba, Francis; Fengqi, Zhou; de la Rue du Can, Stephane; Gielen, Dolf; Joosen, Suzanne; Konar, Manaswita; Matysek, Anna; Miner, Reid; Okazaki, Teruo; Sanders, Johan; Sheinbaum Parado, Claudia

    2007-12-01

    This chapter addresses past, ongoing, and short (to 2010) and medium-term (to 2030) future actions that can be taken to mitigate GHG emissions from the manufacturing and process industries. Globally, and in most countries, CO{sub 2} accounts for more than 90% of CO{sub 2}-eq GHG emissions from the industrial sector (Price et al., 2006; US EPA, 2006b). These CO{sub 2} emissions arise from three sources: (1) the use of fossil fuels for energy, either directly by industry for heat and power generation or indirectly in the generation of purchased electricity and steam; (2) non-energy uses of fossil fuels in chemical processing and metal smelting; and (3) non-fossil fuel sources, for example cement and lime manufacture. Industrial processes also emit other GHGs, e.g.: (1) Nitrous oxide (N{sub 2}O) is emitted as a byproduct of adipic acid, nitric acid and caprolactam production; (2) HFC-23 is emitted as a byproduct of HCFC-22 production, a refrigerant, and also used in fluoroplastics manufacture; (3) Perfluorocarbons (PFCs) are emitted as byproducts of aluminium smelting and in semiconductor manufacture; (4) Sulphur hexafluoride (SF{sub 6}) is emitted in the manufacture, use and, decommissioning of gas insulated electrical switchgear, during the production of flat screen panels and semiconductors, from magnesium die casting and other industrial applications; (5) Methane (CH{sub 4}) is emitted as a byproduct of some chemical processes; and (6) CH{sub 4} and N{sub 2}O can be emitted by food industry waste streams. Many GHG emission mitigation options have been developed for the industrial sector. They fall into three categories: operating procedures, sector-wide technologies and process-specific technologies. A sampling of these options is discussed in Sections 7.2-7.4. The short- and medium-term potential for and cost of all classes of options are discussed in Section 7.5, barriers to the application of these options are addressed in Section 7.6 and the implication of

  4. Application of Specific Features of Industrial Products when Forming and Developing Brands of Industrial Enterprises

    Directory of Open Access Journals (Sweden)

    Yatsentiuk Stanislav V.

    2014-03-01

    Full Text Available The article analyses and structures approaches and principles of formulation of industrial products. It offers classification of goods and markets of industrial products by their characteristics and participants. It identifies main participants that make decisions at B2C and B2B markets and characterises their specific features and motivation when making decisions on purchase of products of industrial enterprises. It studies and analyses indicators of development of domestic markets of consumer goods and market of industrial products and dynamics of development of their relation in retrospective view.

  5. Industry Specifics and Consumers’ Reactions to Business Crises

    Directory of Open Access Journals (Sweden)

    Kazlauskienė Asta

    2018-02-01

    Full Text Available Different scientific studies provide many valuable recommendations how to manage crises in order to lessen their negative effect on relations with consumers. But the question whether the same business crises management rules can be applied for different industries, or they must be adapted depending on industries specifics, has not received sufficient scientific attention. Knowledge gaps about industry specific effect on consumer reactions to business crises remain. This study focuses on understanding the differences in consumers’ reactions in business crises situations with regard to controversial evaluation in the society of “the sin industries” (alcohol, tobacco, gambling, etc. and ordinary industries (not having controversial associations. Experimental research design, including online experiment with tobacco, beer and functional soft drinks consumers (in total 306 respondents, was chosen for competing research hypotheses testing. Empirical evidence was in line with theoretical argumentation about less negative consumers’ reactions during business crises in case of “sin industries” versus ordinary industry. This study shows that consumers attitudes, such as perception of company’s product quality, trust, social responsibility and behavioural intentions, such as intention to buy and recommend company’s products, are less negative during business crises in lower reputation “sin industries” than in ordinary industries.

  6. Palisades technical specification conversion from custom to new industry standard

    International Nuclear Information System (INIS)

    Foley, D.J.; Young, B.

    1990-01-01

    Consumers Power Company's (CPCo) Palisades plant is in the process of converting from custom technical specifications to the new industry standard, Restructured Standard Technical Specifications (RSTS). Custom technical specifications were the precursor to standard technical specifications, being issued to plants built prior to 1972. In May 1989, each of the four light water reactor owners' groups completed topical reports presenting their version of Restructured Standard Technical Specifications to the Nuclear Regulatory Commission (NRC). After approval of the owners' groups versions of the RSTs by the NRC, individual operating reactors will begin to make the conversion to the RSTS. Each owners' group has designated a lead plant, which will be the first of that vendor type to convert. All of the lead plants currently operate under standard technical specifications. The content of the RSTS was determined by comparing the standard technical specifications with selection criteria specified in the Commissions Interim Policy Statement

  7. Application specific Tester-On-a-Resident-Chip (TORCH{trademark}) - innovation in the area of semiconductor testing

    Energy Technology Data Exchange (ETDEWEB)

    Bowles, M. [L& M Technologies, Albuquerque, NM (United States); Peterson, T. [New Mexico Highlands Univ., Las Vegas, NM (United States); Savignon, D.; Campbell, D. [Sandia National Labs., Albuquerque, NM (United States)

    1997-12-01

    Manufacturers widely recognize testing as a major factor in the cost, producability, and delivery of product in the $100 billion integrated circuit business: {open_quotes}The rapid development of VLSI using sub-micron CMOS technology has suddenly exposed traditional test techniques as a major cost factor that could restrict the development of VLSI devices exceeding 512 pins an operating frequencies above 200 MHz.{close_quotes} -- 1994 Semiconductor Industry Association Roadmap, Design and Test, Summary, pg. 43. This problem increases dramatically for stockpile electronics, where small production quantities make it difficult to amortize the cost of increasingly expensive testers. Application of multiple ICs in Multi-Chip Modules (MCM) greatly multiplies testing problems for commercial and defense users alike. By traditional test methods, each new design requires custom test hardware and software and often dedicated testing equipment costing millions of dollars. Also, physical properties of traditional test systems often dedicated testing equipment costing millions of dollars. Also, physical properties of traditional test systems limit capabilities in testing at-speed (>200 MHz), high-impedance, and high-accuracy analog signals. This project proposed a revolutionary approach to these problems: replace the multi-million dollar external test system with an inexpensive test system integrated onto the product wafer. Such a methodology enables testing functions otherwise unachievable by conventional means, particularly in the areas of high-frequency, at-speed testing, high impedance analog circuits, and known good die assessment. The techniques apply specifically to low volume applications, typical of Defense Programs, where testing costs represent an unusually high proportional of product costs, not easily amortized.

  8. Exposure Characteristics of Nanoparticles as Process By-products for the Semiconductor Manufacturing Industry.

    Science.gov (United States)

    Choi, Kwang-Min; Kim, Jin-Ho; Park, Ju-Hyun; Kim, Kwan-Sick; Bae, Gwi-Nam

    2015-01-01

    This study aims to elucidate the exposure properties of nanoparticles (NPs; semiconductor manufacturing processes. The measurements of airborne NPs were mainly performed around process equipment during fabrication processes and during maintenance. The number concentrations of NPs were measured using a water-based condensation particle counter having a size range of 10-3,000 nm. The chemical composition, size, and shape of NPs were determined by scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy. The resulting concentrations of NPs ranged from 0.00-11.47 particles/cm(3). The concentration of NPs measured during maintenance showed a tendency to increase, albeit incrementally, compared to that measured during normal conditions (under typical process conditions without maintenance). However, the increment was small. When comparing the mean number concentration and standard deviation (n ± σ) of NPs, the chemical mechanical polishing (CMP) process was the highest (3.45 ± 3.65 particles/cm(3)), and the dry etch (ETCH) process was the lowest (0.11 ± 0.22 particles/cm(3)). The major NPs observed were silica (SiO2) and titania (TiO2) particles, which were mainly spherical agglomerates ranging in size from 25-280 nm. Sampling of semiconductor processes in CMP, chemical vapor deposition, and ETCH reveled NPs were particle size exceeded 100 nm in diffusion, metallization, ion implantation, and wet cleaning/etching process. The results show that the SiO2 and TiO2 are the major NPs present in semiconductor cleanroom environments.

  9. Chemical engineering in the electronics industry: progress towards the rational design of organic semiconductor heterojunctions

    KAUST Repository

    Clancy, Paulette

    2012-01-01

    We review the current status of heterojunction design for combinations of organic semiconductor materials, given its central role in affecting the device performance for electronic devices and solar cell applications. We provide an emphasis on recent progress towards the rational design of heterojunctions that may lead to higher performance of charge separation and mobility. We also play particular attention to the role played by computational approaches and its potential to help define the best choice of materials for solar cell development in the future. We report the current status of the field with respect to such goals. © 2012 Elsevier Ltd.

  10. Chemical engineering in the electronics industry: progress towards the rational design of organic semiconductor heterojunctions

    KAUST Repository

    Clancy, Paulette

    2012-05-01

    We review the current status of heterojunction design for combinations of organic semiconductor materials, given its central role in affecting the device performance for electronic devices and solar cell applications. We provide an emphasis on recent progress towards the rational design of heterojunctions that may lead to higher performance of charge separation and mobility. We also play particular attention to the role played by computational approaches and its potential to help define the best choice of materials for solar cell development in the future. We report the current status of the field with respect to such goals. © 2012 Elsevier Ltd.

  11. Some specific features of a surface-screw plasma instability in semiconductors

    International Nuclear Information System (INIS)

    Karavaev, G.F.; Tsipivka, Yu.I.

    1976-01-01

    A numerical analysis of the dispersion relation has been carried out, which enables to discover some new peculiarities in the behaviour of the surface helical instability (SHI) of a semiconductor plasma. To simplify the dispersion relation a semiconductor with nearly equal electron and hole mobilities has been considered. The dependences of threshold characteristics of SHI on a magnetic field H for different angular harmonics are represented graphically. A comparison of the formulas obtained shows that the approximation of truncated series yields an incorrect qualitative dependence of the wavelength on H, whereas asymptotic formulas in the range of strong magnetic fields yield not only a correct qualitative dependence of the threshold characteristics on H, but also a good quantitative agreement

  12. Improving the Management of Innovative Development of Industrial Production According to Industry Specifics

    Directory of Open Access Journals (Sweden)

    Papizh Yuliia S.

    2018-03-01

    Full Text Available The problem of improvement of management efficiency of innovative development of industrial enterprises in modern economic conditions is indicated. The dynamics of innovative processes in Ukraine together with volumes of innovative activity of domestic enterprises are analyzed. The basic principles of formation and efficient functioning of the organizational-economic mechanism of innovative development of industrial production are substantiated. The branch specificity in management of innovative development of coal enterprises is identified. Directions of improvement of the organizational-economic mechanism of management of innovative development of enterprises of coal industry are defined. The basic principles of introduction of the mechanism for stimulation of innovative development of enterprises of coal industry are suggested.

  13. Improving the Efficiency of a Coagulation-Flocculation Wastewater Treatment of the Semiconductor Industry through Zeta Potential Measurements

    Directory of Open Access Journals (Sweden)

    Eduardo Alberto López-Maldonado

    2014-01-01

    Full Text Available Efficiency of coagulation-flocculation process used for semiconductor wastewater treatment was improved by selecting suitable conditions (pH, polyelectrolyte type, and concentration through zeta potential measurements. Under this scenario the zeta potential, ζ, is the right parameter that allows studying and predicting the interactions at the molecular level between the contaminants in the wastewater and polyelectrolytes used for coagulation-flocculation. Additionally, this parameter is a key factor for assessing the efficiency of coagulation-flocculation processes based on the optimum dosages and windows for polyelectrolytes coagulation-flocculation effectiveness. In this paper, strategic pH variations allowed the prediction of the dosage of polyelectrolyte on wastewater from real electroplating baths, including the isoelectric point (IEP of the dispersions of water and commercial polyelectrolytes used in typical semiconductor industries. The results showed that there is a difference between polyelectrolyte demand required for the removal of suspended solids, turbidity, and organic matter from wastewater (23.4 mg/L and 67 mg/L, resp.. It was also concluded that the dose of polyelectrolytes and coagulation-flocculation window to achieve compliance with national and international regulations as EPA in USA and SEMARNAT in Mexico is influenced by the physicochemical characteristics of the dispersions and treatment conditions (pH and polyelectrolyte dosing strategy.

  14. Technology life cycle and specialization patterns of latecomer countries: The case of the semiconductor industry

    NARCIS (Netherlands)

    Triulzi, G.

    2014-01-01

    Catching-up, leapfrogging and falling behind in terms of output and productivity in high-tech industries crucially depends on firms' ability to keep pace with technological change. In fast changing industries today's specialization does not guarantee tomorrow's success as changes in the

  15. Research and Design on a Product Data Definition System of Semiconductor Packaging Industry

    Science.gov (United States)

    Shi, Jinfei; Ma, Qingyao; Zhou, Yifan; Chen, Ruwen

    2017-12-01

    This paper develops a product data definition (PDD) system for a semiconductor packaging and testing company with independent intellectual property rights. The new PDD system can solve the problems such as, the effective control of production plans, the timely feedback of production processes, and the efficient schedule of resources. Firstly, this paper introduces the general requirements of the PDD system and depicts the operation flow and the data flow of the PDD system. Secondly, the overall design scheme of the PDD system is put forward. After that, the physical data model is developed using the Power Designer15.0 tool, and the database system is built. Finally, the function realization and running effects of the PDD system are analysed. The successful operation of the PDD system can realize the information flow among various production departments of the enterprise to meet the standard of the enterprise manufacturing integration and improve the efficiency of production management.

  16. The prevalence of musculoskeletal problems and risk factors among women assembly workers in the semiconductor industry.

    Science.gov (United States)

    Chandrasakaran, A; Chee, H L; Rampal, K G; Tan, G L

    2003-12-01

    A cross-sectional study to determine work-related musculoskeletal problems and ergonomic risk factors was conducted among 529 women semiconductor workers. Overall, 83.4% had musculoskeletal symptoms in the last one year. Pain in the back (57.8%), lower leg (48.4%) and shoulder (44.8%) were the three most common musculoskeletal problems. Significant associations were found between prolonged standing and upper and lower leg pain, between prolonged sitting and neck and shoulder pain and between prolonged bending and shoulder arm, back and upper leg pain. The study therefore showed a clear association between work-related musculoskeletal pain and prolonged hours spent in particular postures and movements.

  17. Specification of merger gains in the Norwegian electricity distribution industry

    International Nuclear Information System (INIS)

    Saastamoinen, Antti; Bjørndal, Endre; Bjørndal, Mette

    2017-01-01

    Electricity distribution often exhibits economies of scale. In Norway, a number of smaller distribution system operators exist and thus there is potential to restructure the industry, possibly through mergers. However, the revenue cap regulatory model in Norway does not incentivize firms to merge as merging leads to a stricter revenue cap for the merged company. Thus the regulator compensates the firms in order to create such incentives. The amount of compensation is based on the potential gains of the merger estimated using a data envelopment analysis (DEA) based frontier approach introduced by Bogetoft and Wang (2005). DEA is however only one of many possible frontier estimators that can be used in estimation. Furthermore, the returns to scale assumption, the operating environment of firms and the presence of stochastic noise and outlier observations are all known to affect to the estimation of production technology. In this paper we explore how varying assumptions under two alternative frontier estimators shape the distribution of merger gains within the Norwegian distribution industry. Our results reveal that the restructuring policies of the industry may be significantly altered depending how potential gains from the mergers are estimated. - Highlights: • The merger gains of Norwegian electricity distribution firm are investigated. • Different estimators and model specifications are applied. • Results show that the gains are significantly affected by the model choice. • Incentives to merge may be shaped through the estimation of gains.

  18. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  19. The Asian Semiconductor Industry and It’s Potential Impacts to U.S. National Security. Electronics Industry Study

    Science.gov (United States)

    2007-01-01

    late 1980s, Korean firms began to compete globally on memory chips, with Samsung earning a sales profit in 1987 (Pecht, 1997, p. 10; Mathews, 2000, p...competitive in the 1990s (Lee, 1997, p. 41). Singapore, Malaysia and China have since developed significant chip industries (Beane, 1997, p. 9; Pecht...sales in parentheses): #2 Samsung ($19.7B), #5 Toshiba ($9.8B), #6 TSMC ($9.7B), #7 Hynix ($8.0B) and #8 Renesas ($7.9B) (McGrath, 2007, p. 3

  20. Integration of a nonmetallic electrostatic precipitator and a wet scrubber for improved removal of particles and corrosive gas cleaning in semiconductor manufacturing industries.

    Science.gov (United States)

    Kim, Hak-Joon; Han, Bangwoo; Kim, Yong-Jin; Yoa, Seok-Jun; Oda, Tetsuji

    2012-08-01

    To remove particles in corrosive gases generated by semiconductor industries, we have developed a novel non-metallic, two-stage electrostatic precipitator (ESP). Carbon brush electrodes and grounded carbon fiber-reinforced polymer (CFRP) form the ionization stage, and polyvinyl chloride collection plates are used in the collection stage of the ESP The collection performance of the ESP downstream of a wet scrubber was evaluated with KC1, silica, and mist particles (0.01-10 pm), changing design and operation parameters such as the ESP length, voltage, and flow rate. A long-term and regeneration performance (12-hr) test was conducted at the maximum operation conditions of the scrubber and ESP and the performance was then demonstrated for 1 month with exhaust gases from wet scrubbers at the rooftop of a semiconductor manufacturing plant in Korea. The results showed that the electrical and collection performance of the ESP (16 channels, 400x400 mm2) was maintained with different grounded plate materials (stainless steel and CFRP) and different lengths of the ionization stage. The collection efficiency of the ESP at high air velocity was enhanced with increases in applied voltages and collection plate lengths. The ESP (16 channels with 100 mm length, 400x400 mm2x540 mm with a 10-mm gap) removed more than 90% of silica and mistparticles with 10 and 12 kV applied to the ESPat the air velocity of 2 m/s and liquid-to-gas ratio of 3.6 L/m3. Decreased performance after 13 hours ofcontinuous operation was recovered to the initial performance level by 5 min of water washing. Moreover during the 1-month operation at the demonstration site, the ESP showed average collection efficiencies of 97% based on particle number and 92% based on total particle mass, which were achieved with a much smaller specific corona power of 0.28 W/m3/hr compared with conventional ESPs.

  1. A comprehensive review of arsenic levels in the semiconductor manufacturing industry.

    Science.gov (United States)

    Park, Donguk; Yang, Haengsun; Jeong, Jeeyeon; Ha, Kwonchul; Choi, Sangjun; Kim, Chinyon; Yoon, Chungsik; Park, Dooyong; Paek, Domyung

    2010-11-01

    This paper presents a summary of arsenic level statistics from air and wipe samples taken from studies conducted in fabrication operations. The main objectives of this study were not only to describe arsenic measurement data but also, through a literature review, to categorize fabrication workers in accordance with observed arsenic levels. All airborne arsenic measurements reported were included in the summary statistics for analysis of the measurement data. The arithmetic mean was estimated assuming a lognormal distribution from the geometric mean and the geometric standard deviation or the range. In addition, weighted arithmetic means (WAMs) were calculated based on the number of measurements reported for each mean. Analysis of variance (ANOVA) was employed to compare arsenic levels classified according to several categories such as the year, sampling type, location sampled, operation type, and cleaning technique. Nine papers were found reporting airborne arsenic measurement data from maintenance workers or maintenance areas in semiconductor chip-making plants. A total of 40 statistical summaries from seven articles were identified that represented a total of 423 airborne arsenic measurements. Arsenic exposure levels taken during normal operating activities in implantation operations (WAM = 1.6 μg m⁻³, no. of samples = 77, no. of statistical summaries = 2) were found to be lower than exposure levels of engineers who were involved in maintenance works (7.7 μg m⁻³, no. of samples = 181, no. of statistical summaries = 19). The highest level (WAM = 218.6 μg m⁻³) was associated with various maintenance works performed inside an ion implantation chamber. ANOVA revealed no significant differences in the WAM arsenic levels among the categorizations based on operation and sampling characteristics. Arsenic levels (56.4 μg m⁻³) recorded during maintenance works performed in dry conditions were found to be much higher than those from maintenance works in wet

  2. API Specification Q1: The quality system specification for the oil and gas industry

    International Nuclear Information System (INIS)

    Peurifoy, C.K.

    1994-01-01

    The Oil and Gas Production Industry began using the American Petroleum Institute's Specification Q1, ''Specification for Quality Programs'' (1st Edition, January 1, 1985) in late 1984. The generic ISO 9000 Series Standards, ''Quality management and quality assurance standards,'' were developed at about the same time and were published for public use in 1987. By late 1989 and into the early nineties, the formation of the European Economic Community and the issuance of the EC Procurement Directives sparked a rush by companies worldwide to comply with all the requirements necessary to do business in Europe. The ensuing ''ISO Mania'' has created a windfall for any company providing ISO 9000 quality system certification, consulting, training and almost anything to do with ISO 9000. It is difficult to miss one of the hundreds of newspaper and trade magazine articles promoting the ISO 9000 Quality Standards for use in almost every industry. This paper discusses the latest developments of both the lesser known API Spec Q1 and the much publicized ISO 9001 as well as discusses some of the similarities and differences between them and possible future trends. It also reviews some of the strengths and weaknesses of both documents to support the sentiment that API Spec Q1, in conjunction with the API Monogram Program, is the best quality standard for use in ordering equipment, materials and services for the Oil and Gas Industry

  3. Accumulation of heavy metals and trace elements in fluvial sediments received effluents from traditional and semiconductor industries.

    Science.gov (United States)

    Hsu, Liang-Ching; Huang, Ching-Yi; Chuang, Yen-Hsun; Chen, Ho-Wen; Chan, Ya-Ting; Teah, Heng Yi; Chen, Tsan-Yao; Chang, Chiung-Fen; Liu, Yu-Ting; Tzou, Yu-Min

    2016-09-29

    Metal accumulation in sediments threatens adjacent ecosystems due to the potential of metal mobilization and the subsequent uptake into food webs. Here, contents of heavy metals (Cd, Cr, Cu, Ni, Pb, and Zn) and trace elements (Ga, In, Mo, and Se) were determined for river waters and bed sediments that received sewage discharged from traditional and semiconductor industries. We used principal component analysis (PCA) to determine the metal distribution in relation to environmental factors such as pH, EC, and organic matter (OM) contents in the river basin. While water PCA categorized discharged metals into three groups that implied potential origins of contamination, sediment PCA only indicated a correlation between metal accumulation and OM contents. Such discrepancy in metal distribution between river water and bed sediment highlighted the significance of physical-chemical properties of sediment, especially OM, in metal retention. Moreover, we used Se XANES as an example to test the species transformation during metal transportation from effluent outlets to bed sediments and found a portion of Se inventory shifted from less soluble elemental Se to the high soluble and toxic selenite and selenate. The consideration of environmental factors is required to develop pollution managements and assess environmental risks for bed sediments.

  4. Radiation Safety in Industrial Radiography. Specific Safety Guide (Spanish Edition)

    International Nuclear Information System (INIS)

    2013-01-01

    This Safety Guide provides recommendations for ensuring radiation safety in industrial radiography used in non-destructive testing. This includes industrial radiography work that utilizes X ray and gamma sources, both in shielded facilities that have effective engineering controls and in outside shielded facilities using mobile sources. Contents: 1. Introduction; 2. Duties and responsibilities; 3. Safety assessment; 4. Radiation protection programme; 5. Training and qualification; 6. Individual monitoring of workers; 7. Workplace monitoring; 8. Control of radioactive sources; 9. Safety of industrial radiography sources and exposure devices; 10. Radiography in shielded enclosures; 11. Site radiography; 12. Transport of radioactive sources; 13. Emergency preparedness and response; Appendix: IAEA categorization of radioactive sources; Annex I: Example safety assessment; Annex II: Overview of industrial radiography sources and equipment; Annex III: Examples of accidents in industrial radiography

  5. Radiation Safety in Industrial Radiography. Specific Safety Guide

    International Nuclear Information System (INIS)

    2011-01-01

    This Safety Guide provides recommendations for ensuring radiation safety in industrial radiography used in non-destructive testing. This includes industrial radiography work that utilizes X ray and gamma sources, both in shielded facilities that have effective engineering controls and in outside shielded facilities using mobile sources. Contents: 1. Introduction; 2. Duties and responsibilities; 3. Safety assessment; 4. Radiation protection programme; 5. Training and qualification; 6. Individual monitoring of workers; 7. Workplace monitoring; 8. Control of radioactive sources; 9. Safety of industrial radiography sources and exposure devices; 10. Radiography in shielded enclosures; 11. Site radiography; 12. Transport of radioactive sources; 13. Emergency preparedness and response; Appendix: IAEA categorization of radioactive sources; Annex I: Example safety assessment; Annex II: Overview of industrial radiography sources and equipment; Annex III: Examples of accidents in industrial radiography.

  6. Radiation Safety in Industrial Radiography. Specific Safety Guide (French Edition)

    International Nuclear Information System (INIS)

    2013-01-01

    This Safety Guide provides recommendations for ensuring radiation safety in industrial radiography used in non-destructive testing. This includes industrial radiography work that utilizes X ray and gamma sources, both in … shielded facilities that have effective engineering controls and in outside shielded facilities using mobile sources. Contents: 1. Introduction; 2. Duties and responsibilities; 3. Safety assessment; 4. Radiation protection programme; 5. Training and qualification; 6. Individual monitoring of workers; 7. Workplace monitoring; 8. Control of radioactive sources; 9. Safety of industrial radiography sources and exposure devices; 10. Radiography in shielded enclosures; 11. Site radiography; 12. Transport of radioactive sources; 13. Emergency preparedness and response; Appendix: IAEA categorization of radioactive sources; Annex I: Example safety assessment; Annex II: Overview of industrial radiography sources and equipment; Annex III: Examples of accidents in industrial radiography

  7. Radiation Safety in Industrial Radiography. Specific Safety Guide (Arabic Edition)

    International Nuclear Information System (INIS)

    2012-01-01

    This Safety Guide provides recommendations for ensuring radiation safety in industrial radiography used in non-destructive testing. This includes industrial radiography work that utilizes X ray and gamma sources, both in shielded facilities that have effective engineering controls and outside shielded facilities using mobile sources. Contents: 1. Introduction; 2. Duties and responsibilities; 3. Safety assessment; 4. Radiation protection programme; 5. Training and qualification; 6. Individual monitoring of workers; 7. Workplace monitoring; 8. Control of radioactive sources; 9. Safety of industrial radiography sources and exposure devices; 10. Radiography in shielded enclosures; 11. Site radiography; 12. Transport of radioactive sources; 13. Emergency preparedness and response; Appendix: IAEA categorization of radioactive sources; Annex I: Example safety assessment; Annex II: Overview of industrial radiography sources and equipment; Annex III: Examples of accidents in industrial radiography.

  8. ASTM E 1559 method for measuring material outgassing/deposition kinetics has applications to aerospace, electronics, and semiconductor industries

    Science.gov (United States)

    Garrett, J. W.; Glassford, A. P. M.; Steakley, J. M.

    1994-01-01

    The American Society for Testing and Materials has published a new standard test method for characterizing time and temperature-dependence of material outgassing kinetics and the deposition kinetics of outgassed species on surfaces at various temperatures. This new ASTM standard, E 1559(1), uses the quartz crystal microbalance (QCM) collection measurement approach. The test method was originally developed under a program sponsored by the United States Air Force Materials Laboratory (AFML) to create a standard test method for obtaining outgassing and deposition kinetics data for spacecraft materials. Standardization by ASTM recognizes that the method has applications beyond aerospace. In particular, the method will provide data of use to the electronics, semiconductor, and high vacuum industries. In ASTM E 1559 the material sample is held in vacuum in a temperature-controlled effusion cell, while its outgassing flux impinges on several QCM's which view the orifice of the effusion cell. Sample isothermal total mass loss (TML) is measured as a function of time from the mass collected on one of the QCM's which is cooled by liquid nitrogen, and the view factor from this QCM to the cell. The amount of outgassed volatile condensable material (VCM) on surfaces at higher temperatures is measured as a function of time during the isothermal outgassing test by controlling the temperatures of the remaining QCM's to selected values. The VCM on surfaces at temperatures in between those of the collector QCM's is determined at the end of the isothermal test by heating the QCM's at a controlled rate and measuring the mass loss from the end of the QCM's as a function of time and temperature. This reevaporation of the deposit collected on the QCM's is referred to as QCM thermogravimetric analysis. Isothermal outgassing and deposition rates can be determined by differentiating the isothermal TML and VCM data, respectively, while the evaporation rates of the species can be obtained as a

  9. Genotoxicity studies in semiconductor industry. 1. In vitro mutagenicity and genotoxicity studies of waste samples resulting from plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Braun, R.; Huettner, E.M.; Merten, H.; Raabe, F. (Institute of Plant Genetics and Crop Plant Research, Gatersleben (Germany))

    1993-07-01

    Solid waste samples taken from the etching reactor, the turbo pump, and the waste air system of a plasma etching technology line in semiconductor production were studied as to their genotoxic properties in a bacterial repair test, in the Ames/Salmonella microsome assay, in the SOS chromotest, in primary mouse hepatocytes, and in Chinese hamster V79 cell cultures. All three waste samples were found to be active by inducing of unscheduled DNA-synthesis in mouse hepatocytes in vitro. In the bacterial rec-type repair test with Proteus mirabilis, waste samples taken from the turbo pump and the vacuum pipe system were not genotoxic. The waste sample taken from the chlorine-mediated plasma reactor was clearly positive in the bacterial repair assay and in the SOS chromotest with Escherichia coli. Mutagenic activity was demonstrated for all samples in the presence and absence of S9 mix made from mouse liver homogenate. Again, highest mutagenic activity was recorded for the waste sample taken from the plasma reactor, while samples collected from the turbo pump and from the waste air system before dilution and liberation of the air were less mutagenic. For all samples chromosomal damage in V79 cells was not detected, indicating absence of clastogenic activity in vitro. Altogether, these results indicate generation of genotoxic and mutagenic products as a consequence of chlorine-mediated plasma etching in the microelectronics industry and the presence of genotoxins even in places distant from the plasma reactor. Occupational exposure can be expected both from the precipitated wastes and from chemicals reaching the environment with the air stream.

  10. EXPORT CONTROLS: Rapid Advances in China's Semiconductor Industry Underscore Need for Fundamental U.S. Policy Review

    National Research Council Canada - National Science Library

    2002-01-01

    The United States controls the export of certain technology, including some of the equipment and materials used to make semiconductors, to sensitive destinations such as China for national security...

  11. Specific examples on fostering open innovation at the industry level

    DEFF Research Database (Denmark)

    Mahdad, Maral; Albats, Ekaterina

    2017-01-01

    This chapter highlights the role of university-industry collaboration in generating innovation. It provides an overview of the actors’ motives for collaboration, the most common barriers and drivers of this type of inter-organizational relationships, and reviews the types of collaborative links....... Moreover, this chapter introduces various online tools for bridging the academia and the industry and presents some real cases of university-business collaboration. The chapter is supplemented by pedagogical guidelines, evaluation questions, teaching tips and suggestions for reading....

  12. 10 CFR 34.61 - Records of the specific license for industrial radiography.

    Science.gov (United States)

    2010-01-01

    ... 10 Energy 1 2010-01-01 2010-01-01 false Records of the specific license for industrial radiography. 34.61 Section 34.61 Energy NUCLEAR REGULATORY COMMISSION LICENSES FOR INDUSTRIAL RADIOGRAPHY AND... Records of the specific license for industrial radiography. Each licensee shall maintain a copy of its...

  13. Causes Analysis of Enterprise Mergers and Acquisitions in Semiconductor Industries%浅析半导体行业内企业并购动因

    Institute of Scientific and Technical Information of China (English)

    周慧

    2011-01-01

    Domestic and international semiconductor companies started wave of mergers and acquisitions in this century, hoping to win in the semiconductor market through the scale and leadership brought by mergers and acquisitions. From the analysis of M & A from different point of economics, the fact that the mergers and acquisitions in semiconductor industry is effected by the economies of scale, synergies, industry cluster.%国内外半导体公司在本世纪展开了并购重组潮,希望通过并购带来的规模和领导力在半导体市场上获胜.本文从经济学中关于企业并购的不同角度分析,对半导体行业内的企业并购行为受规模经济,协同效应,产业集群效应等的影响进行大概的分析.

  14. Investigation of some specific industry objects effect on plants

    International Nuclear Information System (INIS)

    Kadirova, M.; Mukhamedshina, N. M.; Mirsagatova, A. A.; Norboev, N.; Amanov, M.; Baynazarov, B.; Khushvaktov, T.

    2001-01-01

    Such industry objects as metallurgical works, chemical fertilizers manufacture, automobile industry and others are contribute to contaminate an environment. For example, it is known, that aluminum factories throw out in an environment fluorine hydride, solid fluorides, nitrogen dioxide, sulpher dioxide, hydrocarbons, ions of heavy metals and others. For comparison of harmful action of various industrial objects on plants we had investigate some leaves and seed of plants grown in areas of Tadjik aluminum factory, Chirchik works of heatproof and refractory metals, Asaka automobile works and Tashkent nuclear reactor action. Investigations were conduct by nuclear techniques and by physical and agrotechnical ethods. The alternative methods have been used by Tashkent state agrarian university. High sensitive and reliable multielement instrumental neutron activation analysis (INAA) and X-ray radiometric techniques for determination of 27 elements in plant have been developed in the Institute of nuclear physics (INP)

  15. Macroeconomic and industry-specific determinants of Greek bank profitability

    Directory of Open Access Journals (Sweden)

    Zampara, K.

    2017-03-01

    Full Text Available Purpose: The purpose of this paper is to investigate the external factors that influence the profitability of a typical Greek systemic bank over the period 2001 – 2014. Design/Methodology/Approach: A conceptual framework incorporating two fundamental groups of const ructs, namely, macroeconomic forces and industry related factors, was developed. Two constructs were examined in the former: GDP growth rate and unemployment rate, whilst two attributes were explored in the latter; the bank's market share, both in terms of deposits and in terms of assets, and the banking market growth, also both in terms of the market's total assets and total deposits. In order to isolate the effects of the ongoing financial crisis, the research was undertaken for two periods, firstly 2001 to 2014 and secondly, the period 2001 - 2011, which excluded the deep recession. Consequently, multiple regression analysis was conducted and linear models were specified by means of OLS. Findings: The empirical analysis revealed that both macroeconomic forces and industry-related factors affect bank profitability. As far as the macroeconomic factors are concerned, unemployment rate has a negative impact, whereas the GDP growth rate has a positive impact on bank profitability. The industry -related factors, rate of growth of the industry's deposits and bank's assets market share have a positive impact on the financial performance of the bank. Finally, the rate of growth of the industry's assets and the bank's deposits market share have a negative effect on bank profitability. Originality/Value: This study reveals the mechanism determining bank profitability over a recent period that includes the financial crisis. Moreover, understanding the impact of macroeconomic forces as well as industry related attributes on bank profitability may enable banks to focus on the most critical factors in their decision process.

  16. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  17. Specific features of occupational medicine in nuclear research and industry

    International Nuclear Information System (INIS)

    Giraud, J.M.; Quesne, B.

    2003-01-01

    Measures to prevent the exposure of personnel to ionising radiation were taken as soon as the first nuclear laboratories were set up. This branch of occupational preventive medicine has since kept pace with advances in research and in the industrial applications of nuclear energy. (authors)

  18. Low specific activity scale in the oil industry

    International Nuclear Information System (INIS)

    1991-01-01

    The NRPB present an illustrated fold-out leaflet in the At-a-glance series, for members of the oil industry, indicating the type of radioactivity to be met during off-shore drilling, possible hazards, doses, and precautions and procedures to be undertaken by workers. (author)

  19. New radionuclide specific laboratory detection system for metallurgical industry

    International Nuclear Information System (INIS)

    Burianova, L.; Solc, J.; Dryak, P.; Moser, H.; Branger, T.; Garcia-Torano, E.; Peyres, V.; Capogni, M.; Luca, A.; Vodenik, B.; Oliveira, C.; Portugal, L.; Tzika, F.; Lutter, G.; Szucs, L.; Dziel, T.; Burda, O.; Dirk, A.; Martinkovic, J.; Sliskonen, T.; Mattila, A.

    2014-01-01

    One of the main outputs of the European Metrology Research Programme (EMRP) project 'Ionising radiation metrology for the metallurgical industry' (MetroMetal) was the recommendation on a novel spectrometric detection system optimized for the measurement of radioactivity in metallurgical samples. The recommended system, prototypes of which were constructed at two project partner's laboratories, was characterized by using Monte Carlo (MC) simulations. Six different MC codes were used to model the system and a range of cylindrical samples of cast steel, slag and fume dust. The samples' shape, density, and elemental composition were the same as the ones of the calibration standards developed within the project to provide traceability to end-users. The MC models were used to calculate full-energy peak and total detection efficiencies as well as true coincidence summing correction (TCSC) factors for selected radionuclides of interest in the metallurgical industry: 60 Co, 137 Cs, 192 Ir, 214 Bi, 214 Pb, and 208 Tl. The MC codes were compared to each other on the basis of the calculated detection efficiencies and TCSC factors. In addition, a 'Procedural guide for calculation of TCSC factors for samples in metallurgical industry' was developed for end-users. The TCSC factors reached in certain cases up to 32% showing that the summing effects are of high importance in the close measurement geometries met in routine analysis of metallurgical samples. (authors)

  20. Radiation Safety in Industrial Radiography. Specific Safety Guide (Spanish Edition); Seguridad radiologica en la radiografia industrial

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2013-12-15

    This Safety Guide provides recommendations for ensuring radiation safety in industrial radiography used in non-destructive testing. This includes industrial radiography work that utilizes X ray and gamma sources, both in shielded facilities that have effective engineering controls and in outside shielded facilities using mobile sources. Contents: 1. Introduction; 2. Duties and responsibilities; 3. Safety assessment; 4. Radiation protection programme; 5. Training and qualification; 6. Individual monitoring of workers; 7. Workplace monitoring; 8. Control of radioactive sources; 9. Safety of industrial radiography sources and exposure devices; 10. Radiography in shielded enclosures; 11. Site radiography; 12. Transport of radioactive sources; 13. Emergency preparedness and response; Appendix: IAEA categorization of radioactive sources; Annex I: Example safety assessment; Annex II: Overview of industrial radiography sources and equipment; Annex III: Examples of accidents in industrial radiography.

  1. The question about increasing of thermoelectrical Q and percent of the yield of the semiconductor material on the basis of chalcogenides of the bismuth and antimony under conditions of experimental-industrial production

    International Nuclear Information System (INIS)

    Magerramov, A.A.; Barkhalov, B.S.

    2005-01-01

    Full text : Different methods of the receiving of monocrystalline ingots of the semiconductor materials for thermo electrical inverter of energy have been considered. On the basis of the analyses of theoretical and experimental data generated series of recommendations, directed to increase thermo electrical Q receiving from thermo electrical materials and increasing percent of yield of semiconductor materials on the basis of chalcogenides of the bismuth and antimony on the basis of industrial production

  2. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-01

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. Copyright © 2015 Elsevier Inc. All rights reserved.

  3. Improving the Efficiency of a Coagulation-Flocculation Wastewater Treatment of the Semiconductor Industry through Zeta Potential Measurements

    OpenAIRE

    López-Maldonado, Eduardo Alberto; Oropeza-Guzmán, Mercedes Teresita; Ochoa-Terán, Adrián

    2014-01-01

    Efficiency of coagulation-flocculation process used for semiconductor wastewater treatment was improved by selecting suitable conditions (pH, polyelectrolyte type, and concentration) through zeta potential measurements. Under this scenario the zeta potential, ζ, is the right parameter that allows studying and predicting the interactions at the molecular level between the contaminants in the wastewater and polyelectrolytes used for coagulation-flocculation. Additionally, this parameter is a k...

  4. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  5. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  6. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  7. Accumulation of trace elements used in semiconductor industry in Formosan squirrel, as a bio-indicator of their exposure, living in Taiwan.

    Science.gov (United States)

    Suzuki, Yoshinari; Watanabe, Izumi; Oshida, Tatsuo; Chen, Yen-Jean; Lin, Liang-Kong; Wang, Yu-Huang; Yang, Kouh-Cheng; Kuno, Katsuji

    2007-07-01

    Concentrations of 17 trace elements were analyzed using inductively coupled plasma-mass spectrometry (ICP-MS) in Formosan squirrels (Callosciurus erythraeus) of Taiwan and Japan to document trace element pollution in Taiwan. High concentrations of elements used to produce semiconductors - Ga, As, Cd, In and Tl - were found in animals captured in Miaoli County, which is the nearest site to Hsinchu City, a chief city of Taiwan's semiconductor industry. Significant correlations between Ga, As, In and Tl were found in the kidney, liver, lung and muscle tissues of Taiwanese squirrels. Hierarchical cluster analysis indicated that Ga, As, In and Tl were of the same clade, indicating that Ga, As, In and Tl were discharged from an identical origin. Molar ratios of Ga/As concentration in lungs of animals captured in Miaoli resembled those of animals after intratracheal administration of particulate gallium arsenide (GaAs). This result might indicate that the higher concentrations of Ga and As in the specimens in Miaoli resulted from atmospheric exposure to GaAs.

  8. Environmental and health risks of chlorine trifluoride (ClF3), an alternative to potent greenhouse gases in the semiconductor industry.

    Science.gov (United States)

    Tsai, Wen-Tien

    2011-06-15

    The first accident involving chlorine trifluoride (ClF(3)) in the history of semiconductor fabrication processes occurred on 28 July 2006 at Hsinchu (Taiwan), resulting in a large release of the highly reactive material and causing the chemical burn to several workers. ClF(3) is used primarily as an in situ cleaning gas in the manufacture of semiconductor silicon-wafer devices in replacement of perfluorocompounds (PFCs) because they have the high potential to contribute significantly to the global warming. This article aimed at reviewing ClF(3) in the physicochemical properties, the industrial uses, and the environmental implications on the basis of its toxicity, reactivity, health hazards and exposure limits. The health hazards of probable decomposition/hydrolysis products from ClF(3) were also evaluated based on their basic physicochemical properties and occupational exposure limits. The occupational exposure assessment was further discussed to understand potentially hazardous risks caused by hydrogen fluoride and fluorides from the decomposition/hydrolysis products of ClF(3). Copyright © 2010 Elsevier B.V. All rights reserved.

  9. Responsible Practices are Culturally Embedded: Theoretical Considerations on Industry-Specific Corporate Social Responsibility

    OpenAIRE

    Beschorner, Thomas; Hajduk, Thomas

    2017-01-01

    In this paper, we develop our argument in three steps: Firstly, we elaborate on some theoretical perspectives for industry-specific CSR by referring to cultural business ethics, a theoretical approach which is located between purely business perspectives and purely normative perspectives on CSR. Secondly, we briefly introduce the papers of this special issue, which covers a wide range of theoretical approaches and empirical studies in the field of industry-specific CSR. Thirdly, we draw atten...

  10. Performance specifications and six sigma theory: Clinical chemistry and industry compared.

    Science.gov (United States)

    Oosterhuis, W P; Severens, M J M J

    2018-04-11

    Analytical performance specifications are crucial in test development and quality control. Although consensus has been reached on the use of biological variation to derive these specifications, no consensus has been reached which model should be preferred. The Six Sigma concept is widely applied in industry for quality specifications of products and can well be compared with Six Sigma models in clinical chemistry. However, the models for measurement specifications differ considerably between both fields: where the sigma metric is used in clinical chemistry, in industry the Number of Distinct Categories is used instead. In this study the models in both fields are compared and discussed. Copyright © 2018. Published by Elsevier Inc.

  11. The control network of air quality in the Lorraine steel industry country: an example of a specific steel industry network

    International Nuclear Information System (INIS)

    Poncin, G.

    1991-01-01

    This specific (for steel industry region) network for the air quality control mainly measures the concentrations in sulfur dioxide, airborne dust and fall out particles. The recent automation of this network implied a preliminary optimization study which consisted of a statistical analysis of the numerous data collected by many hand operated sensors. The implementation and working conditions of the new equipment have required the use of air-conditioned monoblock metallic cabins

  12. Effect of specific resistance training on forearm pain and work disability in industrial technicians: cluster randomised controlled trial

    DEFF Research Database (Denmark)

    Andersen, Lars Louis; Jakobsen, Markus D; Pedersen, Mogens Theisen

    2012-01-01

    To determine the effect of specific resistance training on forearm pain and work disability in industrial technicians.......To determine the effect of specific resistance training on forearm pain and work disability in industrial technicians....

  13. Industry-specificities and Size of Corporations: Determinants of Ownership Structures

    NARCIS (Netherlands)

    van der Elst, C.

    This paper analyses ownership concentration in six European countries and empirically studies the rent-seeking theory. This theory states that ownership concentration not only depends on the level of investor protection but also on company-specific and industry-specific parameters. This study

  14. English for Specific Purposes: A Case Study in an Industrial Setting.

    Science.gov (United States)

    Alexander, Clare

    A course outline and sample materials for a course in English for garment workshop employees in New York are presented, and theoretical considerations in establishing an English for specific purposes (ESP) course are explored. Attention is directed to the needs analysis process undertaken in the garment industry. Specifically, ESP is used to mean…

  15. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  16. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  17. Anaerobic biodegradability and methanogenic toxicity of key constituents in copper chemical mechanical planarization effluents of the semiconductor industry.

    Science.gov (United States)

    Hollingsworth, Jeremy; Sierra-Alvarez, Reyes; Zhou, Michael; Ogden, Kimberly L; Field, Jim A

    2005-06-01

    Copper chemical mechanical planarization (CMP) effluents can account for 30-40% of the water discharge in semiconductor manufacturing. CMP effluents contain high concentrations of soluble copper and a complex mixture of organic constituents. The aim of this study is to perform a preliminary assessment of the treatability of CMP effluents in anaerobic sulfidogenic bioreactors inoculated with anaerobic granular sludge by testing individual compounds expected in the CMP effluents. Of all the compounds tested (copper (II), benzotriazoles, polyethylene glycol (M(n) 300), polyethylene glycol (M(n) 860) monooleate, perfluoro-1-octane sulfonate, citric acid, oxalic acid and isopropanol) only copper was found to be inhibitory to methanogenic activity at the concentrations tested. Most of the organic compounds tested were biodegradable with the exception of perfluoro-1-octane sulfonate and benzotriazoles under sulfate reducing conditions and with the exception of the same compounds as well as Triton X-100 under methanogenic conditions. The susceptibility of key components in CMP effluents to anaerobic biodegradation combined with their low microbial inhibition suggest that CMP effluents should be amenable to biological treatment in sulfate reducing bioreactors.

  18. Dynamism in a Semiconductor Industrial Machine Allocation Problem using a Hybrid of the Bio-inspired and Musical-Harmony Approach

    Science.gov (United States)

    Kalsom Yusof, Umi; Nor Akmal Khalid, Mohd

    2015-05-01

    Semiconductor industries need to constantly adjust to the rapid pace of change in the market. Most manufactured products usually have a very short life cycle. These scenarios imply the need to improve the efficiency of capacity planning, an important aspect of the machine allocation plan known for its complexity. Various studies have been performed to balance productivity and flexibility in the flexible manufacturing system (FMS). Many approaches have been developed by the researchers to determine the suitable balance between exploration (global improvement) and exploitation (local improvement). However, not much work has been focused on the domain of machine allocation problem that considers the effects of machine breakdowns. This paper develops a model to minimize the effect of machine breakdowns, thus increasing the productivity. The objectives are to minimize system unbalance and makespan as well as increase throughput while satisfying the technological constraints such as machine time availability. To examine the effectiveness of the proposed model, results for throughput, system unbalance and makespan on real industrial datasets were performed with applications of intelligence techniques, that is, a hybrid of genetic algorithm and harmony search. The result aims to obtain a feasible solution to the domain problem.

  19. Automation and Integration in Semiconductor Manufacturing

    OpenAIRE

    Liao, Da-Yin

    2010-01-01

    Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

  20. Report on achievement in the preceding research related to global industry technologies for the global industry technology research and development project. Research on gas systems substituting global warming gases such as PFC used in manufacturing semiconductors; 1998 nendo chikyu kankyo sangyo gijutsu ni kakawaru sendo kenkyu. Handotai seizo nado ni shiyosuru PFC nado no chikyu ondanka gas no daitai gas system no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The present semiconductor manufacturing process uses a great amount of PFC having large global warming coefficients and extremely long atmospheric life. A research was made particularly on reduction of its emission from etching processes. After introducing how the semiconductor industry has been working conventionally on protection of the global environment, this paper makes clear the purpose and positioning of this preceding research, as well as how it is moved forward. The paper also reports the results of analyzing and discussing the exhaust gases from etching devices using several kinds of substitute PFC gases. Survey results are reported on the possibilities of new substitute gases, plasma decomposition and treatment of exhaust gases, reaction process simulation, and in-situ analyzing and evaluating technologies. Investigations were made on the possibility of using no PFC in wiring processes which consume greater amount of PFC, as well as on wiring techniques using inter-layer insulation film with low dielectric rate, a new wiring structure forming technology, new functional elements, circuits and systems in a wide range. Proposals were given on specific research and development themes and plans that begin in fiscal 1999. (NEDO)

  1. Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

    Science.gov (United States)

    Opalevs, D.; Scholz, M.; Stuhler, J.; Gilfert, C.; Liu, L. J.; Wang, X. Y.; Vetter, A.; Kirner, R.; Scharf, T.; Noell, W.; Rockstuhl, C.; Li, R. K.; Chen, C. T.; Voelkel, R.; Leisching, P.

    2018-02-01

    We present a novel industrial-grade prototype version of a continuous-wave 193 nm laser system entirely based on solid state pump laser technology. Deep-ultraviolet emission is realized by frequency-quadrupling an amplified diode laser and up to 20 mW of optical power were generated using the nonlinear crystal KBBF. We demonstrate the lifetime of the laser system for different output power levels and environmental conditions. The high stability of our setup was proven in > 500 h measurements on a single spot, a crystal shifter multiplies the lifetime to match industrial requirements. This laser improves the relative intensity noise, brilliance, wall-plug efficiency and maintenance cost significantly. We discuss first lithographic experiments making use of this improvement in photon efficiency.

  2. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Basudev, E-mail: Swain@iae.re.kr [Institute for Advanced Engineering (IAE), Advanced Materials & Processing Center, Yongin-Si 449-863 (Korea, Republic of); Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo [Institute for Advanced Engineering (IAE), Advanced Materials & Processing Center, Yongin-Si 449-863 (Korea, Republic of); Lee, Kun-Jae [Department of Energy Engineering, Dankook University, Cheonan 330-714 (Korea, Republic of)

    2015-07-15

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga{sub 0.97}N{sub 0.9}O{sub 0.09} is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga{sub 0.97}N{sub 0.9}O{sub 0.09} of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4 M HCl, 100 °C and pulp density of 100 kg/m{sup 3,} respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. - Highlights: • Waste MOCVD dust is treated through mechanochemical leaching. • GaN is hardly leached, and converted to NaGaO{sub 2} through ball milling and annealing. • Process for gallium recovery from waste MOCVD dust has been developed. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} is revealed. • Solid-state chemistry involved in this process is reported.

  3. Production Scheduling in Complex Job Shops from an Industrie 4.0 Perspective: A Review and Challenges in the Semiconductor Industry

    OpenAIRE

    Waschneck, Bernd; Bauernhansl, Thomas; Altenmüller, Thomas; Kyek, Andreas

    2017-01-01

    On the one hand, Industrie 4.0 has recently emerged as the keyword for increasing productivity in the 21st century. On the other hand, production scheduling in a Complex Job Shop (CJS) environment, such as wafer fabrication facilities, has drawn interest of researchers dating back to the 1950s [65, 18]. Although both research areas overlap, there seems to be very little interchange of ideas. This review presents and assesses production scheduling techniques in complex job shops from an Indust...

  4. 15 CFR 291.4 - National industry-specific pollution prevention and environmental compliance resource centers.

    Science.gov (United States)

    2010-01-01

    ... 15 Commerce and Foreign Trade 1 2010-01-01 2010-01-01 false National industry-specific pollution prevention and environmental compliance resource centers. 291.4 Section 291.4 Commerce and Foreign Trade Regulations Relating to Commerce and Foreign Trade NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, DEPARTMENT OF COMMERCE NIST EXTRAMURAL PROGRAM...

  5. Gaining industrial confidence for the introduction of domain-specific languages

    NARCIS (Netherlands)

    Mooij, A.J.; Hooman, J.; Albers, R.

    2013-01-01

    Domain-Specific Languages (DSLs) receive attention as the possible next abstraction step in programming. Despite the benefits of using DSLs, in the industry there is also some reluctance against their introduction in product development. We address a number of issues that are important to gain

  6. Buffer Rod Design for Measurement of Specific Gravity in the Processing of Industrial Food Batters

    DEFF Research Database (Denmark)

    Fox, Paul D.; Smith, Penny Probert

    2002-01-01

    A low cost perspex buffer rod design for the measurement of specific gravity during the processing of industrial food batters is reported. Operation was conducted in pulsed mode using a 2.25 MHz, 15 mm diameter transducer and the intensity and an analytic calibration curve relating buffer rod...

  7. Summary of some feasibility studies for site-specific solar industrial process heat

    Energy Technology Data Exchange (ETDEWEB)

    None

    1982-01-01

    Some feasibility studies for several different site specific solar industrial process heat applications are summarized. The followng applications are examined. Leather Tanning; Concrete Production: Lumber and Paper Processing; Milk Processing; Molding, Curing or Drying; Automobile Manufacture; and Food Processing and Preparation. For each application, site and process data, system design, and performance and cost estimates are summarized.

  8. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  9. Defense Industrial Base: Critical Infrastructure and Key Resources Sector-Specific Plan as Input to the National Infrastructure Protection Plan

    National Research Council Canada - National Science Library

    2007-01-01

    This Defense Industrial Base (DIB) Sector-Specific Plan (SSP), developed in collaboration with industry and government security partners, provides sector-level critical infrastructure and key resources (CI/KR...

  10. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  11. Ag-based semiconductor photocatalysts in environmental purification

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jiade; Fang, Wen [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Yu, Changlin, E-mail: yuchanglinjx@163.com [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); School of Environment Engineering and biology Engineering, Guangdong University of Petrochemical Technology, Maoming, 525000 Guangdong Province (China); Zhou, Wanqin [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, 350002 (China); Zhu, Lihua [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Xie, Yu, E-mail: xieyu_121@163.com [College of Environment and Chemical Engineering, Nanchang Hangkong University, Nanchang 330063, Jiangxi (China)

    2015-12-15

    Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO{sub 2}, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

  12. Ag-based semiconductor photocatalysts in environmental purification

    International Nuclear Information System (INIS)

    Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; Zhu, Lihua; Xie, Yu

    2015-01-01

    Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO 2 , ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

  13. Adsorption of copper, nickel and lead ions from synthetic semiconductor industrial wastewater by palm shell activated carbon

    International Nuclear Information System (INIS)

    Onundi, Y. B.; Mamun, A. A.; Al Khatib, M. F.; Ahmad, Y. M.

    2010-01-01

    Granular activated carbon produced from palm kernel shell was used as adsorbent to remove copper, nickel and lead ions from a synthesized industrial wastewater. Laboratory experimental investigation was carried out to identify the effect of p H and contact time on adsorption of lead, copper and nickel from the mixed metals solution. Equilibrium adsorption experiments at ambient room temperature were carried out and fitted to Langmuir and Freundlich models. Results showed that p H 5 was the most suitable, while the maximum adsorbent capacity was at a dosage of 1 g/L, recording a sorption capacity of 1.337 mg/g for lead, 1.581 mg/g for copper and 0.130 mg/g for nickel. The percentage metal removal approached equilibrium within 30 minutes for lead, 75 minutes for copper and nickel, with lead recording 100 p ercent , copper 97 p ercent a nd nickel 55 p ercent r emoval, having a trend of Pb 2+ > Cu 2+ > Ni 2+ . Langmuir model had higher R 2 values of 0.977, 0.817 and 0.978 for copper, nickel and lead respectively, which fitted the equilibrium adsorption process more than Freundlich model for the three metals.

  14. Technique of calculating specific capital investments in the fuel extracting sectors of industry

    Energy Technology Data Exchange (ETDEWEB)

    Bugrov, V.A.; Filey, I.A.

    1980-01-01

    An analysis is made of the existing methods of calculating specific capital investments in the fuel extracting sectors of industry. Their shortcomings are shown. It is suggested that specific capital investments for extraction of coal and gas be defined as the ratio of capital investments to the conditional increase in extraction. Coal extraction should take int consideration all the capital investments associated with the input of new facilities, and the maintenance of the attained level of extraction and reconstruction of the enterprise, as well as all the newly introduced facilities both at the new and at the active enterprises associated with an increase in coal extraction and with maintenance of the facilities. The suggested technique completely corresponds to the ''Standard Technique for Developing a Technical-Industrial-Financial Plan,'' which stipulates determination of specific capital investments per unit of introduced facilities with only the difference that it takes into consideration the specific features of the fuel extracting sectors of industry.

  15. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  16. The Specifics of the Internationalization Process of Czech SMEs in the Food Industry

    Directory of Open Access Journals (Sweden)

    Marcela Tuzová

    2017-01-01

    Full Text Available The aim of this paper is to define the specifics of the internationalization process of Czech small and medium-sized enterprises (SMEs in the food industry. The food industry is the largest manufacturing sector in the EU which consists mainly of SMEs. However, in the Czech Republic it has to face increasing imports of foreign food products because of growing globalization, while exports lag behind. Thus, enterprises should be encouraged to internationalize in a greater extent to maintain their competitiveness. The paper explores the main motives, barriers and risks involved in internationalization as perceived by these enterprises. The results are based on primary data obtained by questionnaire surveys performed among Czech food industry SMEs, thus it is based on data about SME’s real experiences and perception of interntaionalization process. According to our results, Czech SMEs from food industry are driven to internationalize mainly by their efforts to grow or by unsolicited foreign demand for their product. However, as the biggest barriers are perceived those connected with the lack of knowledge about foreign market and administrative requirements. The identified motives and barriers are compared with results of similar researches from Slovakia and Poland. Moreover, the results of Czech SMEs risk perception in internationalization are depicted in risk matrix which assess not only the effect of risk but also the possibility of its occurrence.

  17. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  18. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  19. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  20. Examination on the actual situation of safety measures for the gas used in semiconductor industry of U. S. A. Amerika no handotai kogyoyo gas no anzen taisaku no jitsujo wo mite

    Energy Technology Data Exchange (ETDEWEB)

    Horiguchi, S [National Inst. of Materials and Chemical Research, Tsukuba (Japan)

    1993-06-15

    In compliance with the request of the Compressed Gas Safety Association of Japan, the visits to the Department of Transportation (DOT), the Occupational Safety and Health Administration, Department of Labor (OSHA), which are the apparatus of government, the Compressed Gas Association (CGA), the makers of gas used in the semiconductor industry, the makers of cylinder cabinet, and the semiconductor manufacturing factories run by Japanese were made by the present authors in order to examine the actual situations of the safety measure to the gas used in semiconductor industry of U.S.A. In this paper, the viewpoints as well as the actual situation relating to the safety measure to the compressed gas in said visited apparatus and enterprises are introduced. Especially, a number of points which should be referred to are indicated that recently in America, the control of the dangerous materials are regulated rigorously due to the environmental problems, and additionally the files of material safety data sheet based on Hazard communication of OSHA are ranged in the passageways for being read freely, the certain safety educations are given to the employees in offices and the visiting traders or marketers concerned as the duty. 1 fig., 2 tabs.

  1. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  2. Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

    International Nuclear Information System (INIS)

    Ma Da; Luo Xiao-Rong; Wei Jie; Tan Qiao; Zhou Kun; Wu Jun-Feng

    2016-01-01

    A new ultra-low specific on-resistance (R on,sp ) vertical double diffusion metal–oxide–semiconductor field-effect transistor (VDMOS) with continuous electron accumulation (CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the R on,sp but also makes the R on,sp almost independent of the n-pillar doping concentration (N n ). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the N n , and further reduces the R on,sp . Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the R on,sp by 80% compared with the conventional super-junction VDMOS (CSJ-VDMOS) at the same high breakdown voltage (BV). (paper)

  3. A practical method for the maintainability assessment in industrial devices using indicators and specific attributes

    International Nuclear Information System (INIS)

    Moreu De Leon, Pedro; González-Prida Díaz, Vicente; Barberá Martínez, Luis; Crespo Márquez, Adolfo

    2012-01-01

    The objective of this paper is to describe a procedure to obtain maintainability indicators for industrial devices. This analysis can be helpful, among other cases, to compare systems, to achieve a better design regarding maintainability requirements, to improve this maintainability under specific industrial environment and to foresee maintainability problems due to eventual changes in a device operation conditions. This maintainability assessment can be carried out at any stage of the industrial asset life cycle. With this purpose, this work first introduces the notion of maintainability and the implementation of assessment indicators, including some important requirements to perform that. Then, a brief literature review is presented, including the definition of the main concepts, which are later used in the paper. After studying the maintenance levels and the maintainability attributes, both terms are linked, leading all this analysis to the assessment of the maintainability indicators. It follows a discussion about the information obtained through the maintainability assessment process and its computation into several maintainability indicators. The paper includes a case study, which implements the defined assessment into a practical scenario. Finally, the work concludes summarizing the more significant aspects and suggesting future researches.

  4. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  5. Identifying Industry-Specific Components of Product Liability Response System Using Delphi-AHP Method

    Directory of Open Access Journals (Sweden)

    Seo JunHyeok

    2016-12-01

    Full Text Available PL (product liability response system is an enterprise-wide system that prevents company’s financial loss due to PL-related accidents. Existing researches on PL response system are mainly focused on preventive and/or defense strategies for the companies. Also, it is obvious that each industry has their original characteristics related on PL issues. It means industry-specific characteristics should be considered to adopt PL response strategies. Thus, this paper aims to discuss industry-specific PL response system and their components. Based on prior researches, we tried to reveal the possibility of its application to manufacturing companies of existing PL response strategies using Delphi method with PL experts. Based on first round results, we tried to classify existing PL strategies of manufacturing companies into several categories. To validate our suggestion for essential components of PL response system, second round Delphi method are applied. Analytic hierarchy process (AHP technique will be applied to identify a prioritized list of each components and strategies. Existing PL response strategies could be categorized with six components – strategy, technology, investment, training, awareness, and organization. Among six components, Technology – it represents the technology needed for improving the safety of all products – is the most important components to prepare PL accidents. The limitation of this paper is on the size of survey and variety of examples. However, the future study will enhance the potential of the proposed method. Regardless of rich research efforts to identify PL response strategies, there is no effort to categorize these strategies and prioritized them. Well-coordinated and actionable PL response strategies and their priorities could help small-and-medium sized enterprise (SME to develop their own PL response system with their limited resources.

  6. Optimal configuration of a low-dose breast-specific gamma camera based on semiconductor CdZnTe pixelated detectors

    Science.gov (United States)

    Genocchi, B.; Pickford Scienti, O.; Darambara, DG

    2017-05-01

    Breast cancer is one of the most frequent tumours in women. During the ‘90s, the introduction of screening programmes allowed the detection of cancer before the palpable stage, reducing its mortality up to 50%. About 50% of the women aged between 30 and 50 years present dense breast parenchyma. This percentage decreases to 30% for women between 50 to 80 years. In these women, mammography has a sensitivity of around 30%, and small tumours are covered by the dense parenchyma and missed in the mammogram. Interestingly, breast-specific gamma-cameras based on semiconductor CdZnTe detectors have shown to be of great interest to early diagnosis. Infact, due to the high energy, spatial resolution, and high sensitivity of CdZnTe, molecular breast imaging has been shown to have a sensitivity of about 90% independently of the breast parenchyma. The aim of this work is to determine the optimal combination of the detector pixel size, hole shape, and collimator material in a low dose dual head breast specific gamma camera based on a CdZnTe pixelated detector at 140 keV, in order to achieve high count rate, and the best possible image spatial resolution. The optimal combination has been studied by modeling the system using the Monte Carlo code GATE. Six different pixel sizes from 0.85 mm to 1.6 mm, two hole shapes, hexagonal and square, and two different collimator materials, lead and tungsten were considered. It was demonstrated that the camera achieved higher count rates, and better signal-to-noise ratio when equipped with square hole, and large pixels (> 1.3 mm). In these configurations, the spatial resolution was worse than using small pixel sizes (< 1.3 mm), but remained under 3.6 mm in all cases.

  7. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  8. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  9. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  10. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  11. neutron-Induced Failures in semiconductor Devices

    Energy Technology Data Exchange (ETDEWEB)

    Wender, Stephen Arthur [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-13

    Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

  12. Use of risk assessment in the nuclear industry with specific reference to the Australian situation

    International Nuclear Information System (INIS)

    Cameron, R.F.; Willers, A.

    2001-01-01

    The use of risk assessment in the nuclear industry began in the 1970s as a complementary approach to the deterministic methods used to assess the safety of nuclear facilities. As experience with the theory and application of probabilistic methods has grown, so too has its application. In the last decade, the use of probabilistic safety assessment has become commonplace for all phases of the life of a plant, including siting, design, construction, operation and decommissioning. In the particular case of operation of plant, the use of a 'living' safety case or probabilistic safety assessment, building upon operational experience, is becoming more widespread, both as an operational tool and as a basis for communication with the regulator. In the case of deciding upon a site for a proposed reactor, use is also being made of probabilistic methods in defining the effect of design parameters. Going hand in hand with this increased use of risk based methods has been the development of assessment criteria against which to judge the results being obtained from the risk analyses. This paper reviews the use of risk assessment in the light of the need for acceptability criteria and shows how these tools are applied in the Australian nuclear industry, with specific reference to the probabilistic safety assessment (PSA) performed of HIFAR

  13. Industry-specific risk models for numerical scoring of hazards and prioritization of safety measures

    International Nuclear Information System (INIS)

    Khali, Y.F.; Johnson, K.

    2004-01-01

    Risk analysis consists of five cornerstones that have to be viewed in an holistic manner by risk practitioners of any organization regardless of the industry type or nature of its critical infrastructures. The cornerstones are hazard identification, risk assessment and consequence analysis, determination of risk management actions required to reduce risks to acceptable levels, communication of risk insights among the stake-holders, and continuous monitoring and verification to ensure sustained attainment of tolerable risk levels. Our primary objectives in this research are two fold: first, we compare and contrast a wide spectrum of current industry-specific and application-dependent semi-quantitative risk models. Secondly, based on the insights to be gained from the first task, we propose a framework for a robust risk-based approach for conducting security vulnerability assessment (SVA). Risk practitioners of critical infrastructures, such as commercial nuclear power plants, water utilities, chemical plants, transmission and distribution substations... etc., could readily use this proposed approach to classify, evaluate, and prioritize risks to support allocation of resources required to ensure protection of public health and safety. (author)

  14. Regulating specific organic substances and heavy metals in industrial wastewater discharged to municipal wastewater treatment plants

    DEFF Research Database (Denmark)

    Grüttner, Henrik; Munk, L.; Pedersen, F.

    1994-01-01

    Due to the extension of wastewater treatment plants to nutrient removal and the development towards reuse of sludge m agriculture, new guidelines for regulating industrial discharges m Denmark were needed. The paper describes how a concept for regulating the discharge of specific organic substances...... substances, present knowledge of fate and effects in biological treatment plants is too scarce to underpin the setting of general standards. Therefore, it has been decided to base the developed priority system on the data used in the EEC-system for classification of hazardous chemicals. This includes ready...... degradability, defined by the OECD-test, bio-sorption and bio-accumulation, defined by the octanol/water distribution coefficient and toxic effects on water organisms. Several potential effects of seven heavy metals have been evaluated, and the most critical effects were found to be the quality criteria...

  15. Parkinsonian Balance Deficits Quantified Using a Game Industry Board and a Specific Battery of Four Paradigms.

    Science.gov (United States)

    Darbin, Olivier; Gubler, Coral; Naritoku, Dean; Dees, Daniel; Martino, Anthony; Adams, Elizabeth

    2016-01-01

    This study describes a cost-effective screening protocol for parkinsonism based on combined objective and subjective monitoring of balance function. Objective evaluation of balance function was performed using a game industry balance board and an automated analyses of the dynamic of the center of pressure in time, frequency, and non-linear domains collected during short series of stand up tests with different modalities and severity of sensorial deprivation. The subjective measurement of balance function was performed using the Dizziness Handicap Inventory questionnaire. Principal component analyses on both objective and subjective measurements of balance function allowed to obtained a specificity and selectivity for parkinsonian patients (vs. healthy subjects) of 0.67 and 0.71 respectively. The findings are discussed regarding the relevance of cost-effective balance-based screening system as strategy to meet the needs of broader and earlier screening for parkinsonism in communities with limited access to healthcare.

  16. Parkinsonian balance deficits quantified using a game industry board and a specific battery of four paradigms.

    Directory of Open Access Journals (Sweden)

    Olivier Darbin

    2016-08-01

    Full Text Available This study describes a cost-effective screening protocol for parkinsonism based on combined objective and subjective monitoring of balance function. Objective evaluation of balance function was performed using a game industry balance board and an automated analyses of the dynamic of the center of pressure in time, frequency and non-linear domains collected during short series of stand up tests with different modalities and severity of sensorial deprivation. The subjective measurement of balance function was performed using the Dizziness Handicap Inventory questionnaire. Principal component analyses on both objective and subjective measurements of balance function allowed to obtained a specificity and selectivity for parkinsonian patients (v.s. healthy subjects of 0.67 and 0.71 respectively. The findings are discussed regarding the relevance of cost-effective balance-based screening system as strategy to meet the needs of broader and earlier screening for parkinsonism in communities with limited access to healthcare.

  17. Specific methanogenic activity (SMA of industrial sludge from the aerobic and anaerobic biological treatment

    Directory of Open Access Journals (Sweden)

    Danieli Schneiders

    2013-08-01

    Full Text Available In this study, specific methanogenic activity (SMA tests were performed on textile sludge and food industry sludge. The textile sludge from an activated sludge was collected at the entrance of the secondary biologic clarifier and the food sludge was collected in a UASB reactor. Once collected, the sludges were characterized and tested for SMA. It was found that the microrganisms present in the food sludge had SMA of 0.17 gCOD-CH4 gSSV.d-1 and 337.05 mL of methane production, while the microrganisms of the textile sludge presented 0.10 gCOD-CH4 gSSV.d-1 of SMA and 3.04 mL of methane production. Therefore, the food sludge was more suitable to be used as a starting inoculum in UASB.

  18. Industry

    International Nuclear Information System (INIS)

    Schindler, I.; Wiesenberger, H.

    2001-01-01

    This chapter of the environmental control report deals with the environmental impact of the industry in Austria. It gives a review of the structure and types of the industry, the legal framework and environmental policy of industrial relevance. The environmental situation of the industry in Austria is analyzed in detail, concerning air pollution (SO 2 , NO x , CO 2 , CO, CH 4 , N 2 O, NH 3 , Pb, Cd, Hg, dioxin, furans), waste water, waste management and deposit, energy and water consumption. The state of the art in respect of the IPPC-directives (European Integrated Pollution Prevention and Control Bureau) concerning the best available techniques of the different industry sectors is outlined. The application of European laws and regulations in the Austrian industry is described. (a.n.)

  19. Radiation processing of polymers and semiconductors at the Institute of Nuclear Chemistry and Technology

    International Nuclear Information System (INIS)

    Zimek, Z.; Przybytniak, G.; Kaluska, I.

    2006-01-01

    R(and)D studies in the field of radiation technology in Poland are mostly concentrated at the Institute of Nuclear Chemistry and Technology (INCT). The results of the INCT works on polymer and semiconductor modification have been implemented in various branches of national economy, particularly in industry and medicine. Radiation technology for polymer modification was implemented in the middle of the 1970-ties. Among others, the processes of irradiation and heat shrinkable products expansion have been developed. The transfer of this technology to Polish industry was performed in the middle of the 1980-ties. The present study aims at the formulation of new PE composites better suited to new generation of heat shrinkable products, for example, a new generation of hot-melt adhesives has been developed to meet specific requirements of customers. Modified polypropylene was used for the production of medical devices sterilized by radiation, especially disposable syringes, to overcome the low radiation resistance of the basic material. Modified polypropylene (PP-M) has been formulated at the INCT to provide material suitable for medical application and radiation sterilization process. Modification of semiconductor devices by EB was applied on an industrial scale since 1978 when the INCT and the LAMINA semiconductor factory successfully adopted that technology to improve specific semiconductor devices. This activity is continued on commercial basis where the INCT facilities served to contract irradiation of certain semiconductor devices according to the manufacturing program of the Polish factory and customers from abroad. (author)

  20. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  1. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  2. Is There a Better Semiconductor Firm in Taiwan?

    Directory of Open Access Journals (Sweden)

    Cheng-Wen LEE

    2017-06-01

    Full Text Available The authors investigate the firm value of semiconductor industry in Taiwan in order to differentiate between outstanding semiconductor company and weak semiconductor company. The authors use GAP which is analytical tool to perform four steps: the original maps, sorting maps with clustering trees, summary sufficient maps, and sediment maps. The findings offer a good instruction for policymakers to make related policies in semiconductor firms. Additionally, the paper helps to find firms needed to be reformed through classification by GAP.

  3. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  4. Industrialization

    African Journals Online (AJOL)

    Lucy

    . African states as ... regarded as the most important ingredients that went to add value to land and labour in order for countries ... B. Sutcliffe Industry and Underdevelopment (Massachusetts Addison – Wesley Publishing Company. 1971), pp.

  5. Industrialization

    African Journals Online (AJOL)

    Lucy

    scholar, Walt W. Rostow presented and supported this line of thought in his analysis of ... A Brief Historical Background of Industrialization in Africa ... indicative) The western model allowed for the political economy to be shaped by market.

  6. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  7. Identification of specific sources of airborne particles emitted from within a complex industrial (steelworks) site

    Science.gov (United States)

    Beddows, D. C. S.; Harrison, Roy M.

    2018-06-01

    A case study is provided of the development and application of methods to identify and quantify specific sources of emissions from within a large complex industrial site. Methods include directional analysis of concentrations, chemical source tracers and correlations with gaseous emissions. Extensive measurements of PM10, PM2.5, trace gases, particulate elements and single particle mass spectra were made at sites around the Port Talbot steelworks in 2012. By using wind direction data in conjunction with real-time or hourly-average pollutant concentration measurements, it has been possible to locate areas within the steelworks associated with enhanced pollutant emissions. Directional analysis highlights the Slag Handling area of the works as the most substantial source of elevated PM10 concentrations during the measurement period. Chemical analyses of air sampled from relevant wind directions is consistent with the anticipated composition of slags, as are single particle mass spectra. Elevated concentrations of PM10 are related to inverse distance from the Slag Handling area, and concentrations increase with increased wind speed, consistent with a wind-driven resuspension source. There also appears to be a lesser source associated with Sinter Plant emissions affecting PM10 concentrations at the Fire Station monitoring site. The results are compared with a ME2 study using some of the same data, and shown to give a clearer view of the location and characteristics of emission sources, including fugitive dusts.

  8. Are the determinants of markup size industry-specific? The case of Slovenian manufacturing firms

    Directory of Open Access Journals (Sweden)

    Ponikvar Nina

    2011-01-01

    Full Text Available The aim of this paper is to identify factors that affect the pricing policy in Slovenian manufacturing firms in terms of the markup size and, most of all, to explicitly account for the possibility of differences in pricing procedures among manufacturing industries. Accordingly, the analysis of the dynamic panel is carried out on an industry-by-industry basis, allowing the coefficients on the markup determinants to vary across industries. We find that the oligopoly theory of markup determination for the most part holds for the manufacturing sector as a whole, although large variability in markup determinants exists across industries within the Slovenian manufacturing. Our main conclusion is that each industry should be investigated separately in detail in order to assess the precise role of markup factors in the markup-determination process.

  9. An Analysis of Industry and Sector-Specific Impacts of a Japan-Philippines Economic Partnership

    OpenAIRE

    Escolar, Royce Elvin O.

    2004-01-01

    The paper aims to identify industry and macrolevel factors that affect competitiveness of selected sectors upon the implementation of the JPEPA. Priority sectors identified by the Department of Trade and Industry, accounting for 82% of total Philippine exports to Japan in 2002, were included in the study. For Philippine industries to gain, market access issues on trade facilitation, nontariff barriers and recognition of standards come into play especially for the service and agricultural sect...

  10. High-performance n-type organic semiconductors: incorporating specific electron-withdrawing motifs to achieve tight molecular stacking and optimized energy levels.

    Science.gov (United States)

    Yun, Sun Woo; Kim, Jong H; Shin, Seunghoon; Yang, Hoichang; An, Byeong-Kwan; Yang, Lin; Park, Soo Young

    2012-02-14

    Novel π–conjugated cyanostilbene-based semiconductors (Hex-3,5-TFPTA and Hex-4-TFPTA) with tight molecular stacking and optimized energy levels are synthesized. Hex-4-TFPTA exhibits high-performance n-type organic field-effect transistor (OFET) properties with electron mobilities as high as 2.14 cm2 V−1s−1 and on-off current ratios Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. A study of the talent training project management for semiconductor industry in Taiwan: the application of a hybrid data envelopment analysis approach.

    Science.gov (United States)

    Kao, Ling-Jing; Chiu, Shu-Yu; Ko, Hsien-Tang

    2014-01-01

    The purpose of this study is to evaluate the training institution performance and to improve the management of the Manpower Training Project (MTP) administered by the Semiconductor Institute in Taiwan. Much literature assesses the efficiency of an internal training program initiated by a firm, but only little literature studies the efficiency of an external training program led by government. In the study, a hybrid solution of ICA-DEA and ICA-MPI is developed for measuring the efficiency and the productivity growth of each training institution over the period. The technical efficiency change, the technological change, pure technical efficiency change, scale efficiency change, and the total factor productivity change were evaluated according to five inputs and two outputs. According to the results of the study, the training institutions can be classified by their efficiency successfully and the guidelines for the optimal level of input resources can be obtained for each inefficient training institution. The Semiconductor Institute in Taiwan can allocate budget more appropriately and establish withdrawal mechanisms for inefficient training institutions.

  12. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  13. Radiation Safety in Industrial Radiography. Specific Safety Guide (French Edition); Surete radiologique en radiographie industrielle

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2013-05-15

    This Safety Guide provides recommendations for ensuring radiation safety in industrial radiography used in non-destructive testing. This includes industrial radiography work that utilizes X ray and gamma sources, both in Horizontal-Ellipsis shielded facilities that have effective engineering controls and in outside shielded facilities using mobile sources. Contents: 1. Introduction; 2. Duties and responsibilities; 3. Safety assessment; 4. Radiation protection programme; 5. Training and qualification; 6. Individual monitoring of workers; 7. Workplace monitoring; 8. Control of radioactive sources; 9. Safety of industrial radiography sources and exposure devices; 10. Radiography in shielded enclosures; 11. Site radiography; 12. Transport of radioactive sources; 13. Emergency preparedness and response; Appendix: IAEA categorization of radioactive sources; Annex I: Example safety assessment; Annex II: Overview of industrial radiography sources and equipment; Annex III: Examples of accidents in industrial radiography.

  14. Do Specific Growth Drivers Exist for Firms? A Regional Analysis of Start-ups and Industrial Growth

    Directory of Open Access Journals (Sweden)

    PAUL I. OJEAGA

    2016-06-01

    Full Text Available The study of start-ups, have remained largely a micro economic issue. Firms are the key drivers of industrial sector GDP (or enterprise growth in countries across regions. Few studies have tried to examine the consequence of start-ups in the broad macroeconomics terms on enterprise growth in general with special emphasis on industrial sector output. This study provides a macroeconomic study of the effect of start- ups on industrial sector growth for countries in some specific geographical regions of the world. Panel data is utilized due to it obvious advantages such its ability to utilize a panel of short time frames and its suitability for controlling for omitted variable bias and unobservable heterogeneity across regions. The results show that start-ups remain an intrinsic variable for enterprise growth and industrial sector output discussion in general.

  15. Region-specific study of the electric utility industry. Phase I, final report

    International Nuclear Information System (INIS)

    Wacaster, A.J.

    1985-07-01

    This report describes the financial background of the electric utility industry in VACAR, reports on the present condition of the industry and then assesses the future of this industry. The Virginia-Carolinas subregion (VACAR) of the Southeastern Electric Reliability Council (SERC) was selected for this regional study because of its cooperativeness and its representative mix of powerplants, for example coal, hydro, nuclear, oil. It was found that the supply of future economic electricity is in jeopardy because of the regulatory process, the increasing risk associated with large scale generating stations and the weakening of the nuclear option. A number of options for the future were considered, including deregulation, government ownership and retaining the present system with modifications. The option selected to improve the present condition of the electricity industry was to make the present system work. The present system is sound, and with modifications, problems could be solved within the existing framework. 8 figs., 4 tabs

  16. Overview of Pigs and Poultry: Specific Livestock Industries, Livestock Diseases and Policies in Thailand

    OpenAIRE

    Murphy, Thomas; Tisdell, Clem

    1995-01-01

    The pigs and poultry industries are the major livestock sectors in terms of commercial livestock production in Thailand. The dramatic growth of the Thai economy since the 1960s was spearheaded by rapid expansion of agricultural industries such as the poultry sector and has since generated increased demand for other livestock commodities such as pork. While pigs have traditionally been an important part of the integrated farm system in Thailand, pork production has only recently developed into...

  17. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  18. Network Traffic Features for Anomaly Detection in Specific Industrial Control System Network

    Directory of Open Access Journals (Sweden)

    Matti Mantere

    2013-09-01

    Full Text Available The deterministic and restricted nature of industrial control system networks sets them apart from more open networks, such as local area networks in office environments. This improves the usability of network security, monitoring approaches that would be less feasible in more open environments. One of such approaches is machine learning based anomaly detection. Without proper customization for the special requirements of the industrial control system network environment, many existing anomaly or misuse detection systems will perform sub-optimally. A machine learning based approach could reduce the amount of manual customization required for different industrial control system networks. In this paper we analyze a possible set of features to be used in a machine learning based anomaly detection system in the real world industrial control system network environment under investigation. The network under investigation is represented by architectural drawing and results derived from network trace analysis. The network trace is captured from a live running industrial process control network and includes both control data and the data flowing between the control network and the office network. We limit the investigation to the IP traffic in the traces.

  19. Industry specific PSS: A study of opportunities and barriers for maritime suppliers

    DEFF Research Database (Denmark)

    Andersen, Jakob Axel Bejbro; McAloone, Tim C.; Garcia i Mateu, Adrià

    2013-01-01

    Product-Service System (PSS) business models are finding applications with suppliers and manufacturers across industries, but the models have yet to establish a strong foothold in the maritime sector. A number of metrics for evaluating the attractiveness of PSS business models have been proposed...... in chiefly design research and operations management literature. This paper applies a number of these metrics to the maritime sector using data from a number of maritime suppliers. It is found that the industry is, at least in some aspects, attractive from this PSS metrics standpoint. To explain the inherent...... lack of PSS maturity in the industry despite this metrics-based conclusion, the discussion moves beyond the quantitative factors and considers a number of organisational, structural and cultural issues that stand in the way of PSS. This paper is based on the initial responses provided by maritime...

  20. Tailoring Psychosocial Risk Assessment in the Oil and Gas Industry by Exploring Specific and Common Psychosocial Risks

    Directory of Open Access Journals (Sweden)

    Linn Iren Vestly Bergh

    2018-03-01

    Full Text Available Background: Psychosocial risk management [Psychosocial Risk Management Approach (PRIMA] has, through the years, been applied in several organizations in various industries and countries globally. PRIMA principles have also been translated into international frameworks, such as PRIMA-EF (European framework and the World Health Organization Healthy Workplace Framework. Over the past 10 years, an oil and gas company has put efforts into adopting and implementing international frameworks and standards for psychosocial risk management. More specifically, the company uses a PRIMA. Methods: This study explores available quantitative and qualitative risk data collected through the PRIMA method over the past 8 years in order to explore specific and common psychosocial risks in the petroleum industry. Results: The analyses showed a significant correlation between job resources and symptoms of work-related stress, there was a significant correlation between job demands and symptoms of work-related stress, and there were differences in psychosocial risk factors and symptoms of work-related stress onshore and offshore. The study also offers recommendations on how the results can further be utilized in building a robust system for managing psychosocial risks in the industry. Conclusion: The results from the analyses have provided meaningful and important information about the company-specific psychosocial risk factors and their impact on health and well-being. Keywords: oil and gas industry, psychosocial risk factors, psychosocial risk management

  1. Best practices in incident investigation in the chemical process industries with examples from the industry sector and specifically from Nova Chemicals

    International Nuclear Information System (INIS)

    Morrison, Lisa M.

    2004-01-01

    This paper will summarize best practices in incident investigation in the chemical process industries and will provide examples from both the industry sector and specifically from NOVA Chemicals. As a sponsor of the Center for Chemical Process Safety (CCPS), an industry technology alliance of the American Institute of Chemical Engineers, NOVA Chemicals participates in a number of working groups to help develop best practices and tools for the chemical process and associated industries in order to advance chemical process safety. A recent project was to develop an update on guidelines for investigating chemical process incidents. A successful incident investigation management system must ensure that all incidents and near misses are reported, that root causes are identified, that recommendations from incident investigations identify appropriate preventive measures, and that these recommendations are resolved in a timely manner. The key elements of an effective management system for incident investigation will be described. Accepted definitions of such terms as near miss, incident, and root cause will be reviewed. An explanation of the types of incident classification systems in use, along with expected levels of follow-up, will be provided. There are several incident investigation methodologies in use today by members of the CCPS; most of these methodologies incorporate the use of several tools. These tools include: timelines, sequence diagrams, causal factor identification, brainstorming, checklists, pre-defined trees, and team-defined logic trees. Developing appropriate recommendations and then ensuring their resolution is the key to prevention of similar events from recurring, along with the sharing of lessons learned from incidents. There are several sources of information on previous incidents and lessons learned available to companies. In addition, many companies in the chemical process industries use their own internal databases to track recommendations from

  2. [Mortality among able-bodied population in industrial cities in accordance with specific enterprise forming a company city].

    Science.gov (United States)

    Tikhonova, G I; Gorchakova, T Iu; Churanova, A N

    2013-01-01

    The article covers comparative analysis of mortality causes and levels among male able-bodied population in small and medium industrial cities of Murmansk region in accordance with specific enterprise forming a company city. Findings are that, if compared to Murmansk having no enterprise forming a company, other industrial cities in the region, situated in the same climate area, demonstrated higher levels of mortality among the male able-bodied population with the death causes associated etiologically to occupational hazards on the enterprises forming a company city.

  3. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  4. Nitride semiconductor devices fundamentals and applications

    CERN Document Server

    Morkoç, Hadis

    2013-01-01

    This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

  5. 75 FR 33311 - Guidance for Industry on Bioequivalence Recommendations for Specific Products; Availability

    Science.gov (United States)

    2010-06-11

    ... available recommendations on how to design product-specific BE studies to support ANDAs. Under this process... thinking on a new process for making available to sponsors FDA guidance on how to design product-specific... ``Bioequivalence Recommendations for Specific Products.'' This guidance describes a new process for making...

  6. 77 FR 10535 - Final Guidances for Industry Describing Product-Specific Bioequivalence Recommendations...

    Science.gov (United States)

    2012-02-22

    ... recommendations provide product-specific guidance on the design of BE studies to support abbreviated new drug... the process that would be used to make product-specific BE recommendations available to the public on... ``Bioequivalence Recommendations for Specific Products,'' which explained the process that would be used to make...

  7. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  8. Environmental safety issues for semiconductors (research on scarce materials recycling)

    International Nuclear Information System (INIS)

    Izumi, Shigekazu

    2004-01-01

    In the 21st century, in the fabrication of various industrial parts, particularly, current and future electronics devices in the semiconductor industry, environmental safety issues should be carefully considered. We coined a new term, environmental safety issues for semiconductors, considering our semiconductor research and technology which include environmental and ecological factors. The main object of this analysis is to address the present situation of environmental safety problems in the semiconductor industry; some of which are: (1) the generation and use of hazardous toxic gases in the crystal growth procedure such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), (2) the generation of industrial toxic wastes in the semiconductor process and (3) scarce materials recycling from wastes in the MBE and MOCVD growth procedure

  9. Choosing to Cofinance: Analysis of Project-Specific Alliances in the Movie Industry

    OpenAIRE

    Darius Palia; S. Abraham Ravid; Natalia Reisel

    2008-01-01

    We use a movie industry project-by-project dataset to analyze the choice of financing a project internally versus financing it through outside alliances. The results indicate that project risk is positively correlated with alliance formation. Movie studios produce a variety of films and tend to develop their safest projects internally. Our findings are consistent with internal capital market explanations. We find mixed evidence regarding resource pooling, i.e., sharing the cost of large proje...

  10. Fiscal 1999 research report on long-term energy technology strategy. Basic research on industrial technology strategy (Individual technology strategy). Machine industry technology field (Semiconductor equipment); 1999 nendo choki energy gijutsu senryaku nado ni kansuru chosa hokokusho. Sangyo gijutsu senryaku sakutei kiban chosa (bun'yabetsu gijutsu senryaku) kikai sangyo gijutsu bun'ya (handotai seizo sochi bun'ya)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    This report summarizes the fiscal 1999 basic research result on industrial technology strategy of a semiconductor equipment field, viewing until 5-10 years after. For the future semiconductor industry, the favorable cycling of creation of new demands through performance improvement, and further technology innovation through market expansion is essential absolutely. Since technology development is followed by investment, not only the performance of each equipment but also the higher productivity and cost balance of the whole factory are essential. Self-intelligent function and networking are thus necessary for the equipment. As measures for environment preservation and energy saving, such innovative technologies are required as recycling, reuse, reaction process improvement and alternative technology. Because of diverse final products and a short life time of products, a large-scale collective investment is becoming difficult. A mini-line sequential investment production system according to demand scales is under investigation. Some issues such as micro-technology, realization of 300mm wafer, modularization, CIM, reliability and standardization are also described. (NEDO)

  11. Engineering English and the High-Tech Industry: A Case Study of an English Needs Analysis of Process Integration Engineers at a Semiconductor Manufacturing Company in Taiwan

    Science.gov (United States)

    Spence, Paul; Liu, Gi-Zen

    2013-01-01

    The global high-tech industry is characterized by extreme competitiveness, innovation, and widespread use of English. Consequently, Taiwanese high-tech companies require engineers that are talented in both their engineering and English abilities. In response to the lack of knowledge regarding the English skills needed by engineers in Taiwan's…

  12. Assesing the Effectiveness of Joint Companies in Russia: Industry-Specific Features

    Directory of Open Access Journals (Sweden)

    Elena Anatolyevna Fedorova

    2015-06-01

    Full Text Available The paper evaluates the effectiveness of joint and domestic companies using ROA (operational efficiency and DEA (technical efficiency methodologies. The technical efficiency was estimated in two ways: according to the classical scheme and taking into account spillover effects. The study was based on statements of Russian companies (23 567 joint enterprises and 14 653 companies without FDI for the period of 2008-2012. The authors used RusLana resource to get following information: balance sheets, profit and loss statements, capital structure, number of employees and regional affiliation. The study found that joint companies usually operate more effectively than domestic ones. The authors also conclude that the crisis has not caused severe damages to the average effectiveness by industries. More than that, Russian economy has positive horizontal and vertical FDI spillover effects which increase as time goes by. In 2012 the most efficient joint companies (in terms of technical efficiency belonged to the following industries: coke and petroleum production, chemical industry and metallurgy. The most ineffective ones included following: wholesale and retail trade, machinery and equipment production and agriculture

  13. Solar feasibility study for site-specific industrial-process-heat applications. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Murray, O.L.

    1980-03-18

    This study addresses the technical feasibility of solar energy in industrial process heat (IPH) applications in Mid-America. The study was one of two contracted efforts covering the MASEC 12-state region comprised of: Illinois, Michigan, North Dakota, Indiana, Minnesota, Ohio, Iowa, Missouri, South Dakota, Kansas, Nebraska, Wisconsin. The results of our study are encouraging to the potential future role of solar energy in supplying process heat to a varied range of industries and applications. We identified and developed Case Study documentation of twenty feasible solar IPH applications covering eight major SIC groups within the Mid-American region. The geographical distribution of these applications for the existing range of solar insolation levels are shown and the characteristics of the applications are summarized. The results of the study include process identification, analysis of process heat requirements, selection of preliminary solar system characteristics, and estimation of system performance and cost. These are included in each of the 20 Case Studies. The body of the report is divided into two primary discussion sections dealing with the Study Methodology employed in the effort and the Follow-On Potential of the identified applications with regard to possible demonstration projects. The 20 applications are rated with respect to their relative overall viability and procedures are discussed for possible demonstration project embarkment. Also, a possible extension of this present feasibility study for late-comer industrial firms expressing interest appears worthy of consideration.

  14. The relationship between macroeconomic and industry-specific business cycle indicators and work-related injuris among Danish construction workers

    DEFF Research Database (Denmark)

    Nielsen, Kent Jacob; Lander, Flemming; Lauritsen, Jens

    2015-01-01

    Objectives The current study examines and compares the relationship between both macroeconomic and industry-specific business cycle indicators, and work-related injuries among construction workers in Denmark using emergency department (ED) injury data and also officially reported injuries...... (range 0.14–0.20) and WEA injuries (range 0.13–0.36). Furthermore, although there is some variability in the strength of the relationship of the different business cycle indicators, the relationships are generally not stronger for the WEA injuries than for the ED injuries, except for general unemployment....... Similarly, no substantial differences in strength of relation between industry-specific and macroeconomic indicators were identified. Conclusions The study shows that there was no difference in the relationship between business cycle indicators, and WEA and ED injury data. This indicates that changes...

  15. The effects of firm specific factors and macroeconomics on profitability of property-liability insurance industry in Taiwan

    OpenAIRE

    Chen-Ying Lee

    2014-01-01

    This article investigates the relationship between firm specific factors and macroeconomics on profitability in Taiwanese property-liability insurance industry using the panel data over the1999 through 2009 time period. Using operating ratio and return on assets (ROA) for the two kinds of profitability indicators to measure insurers’ profitability. The results show that underwriting risk, reinsurance usage, input cost, return on investment (ROI) and financial holding group have significant in...

  16. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  17. Certification centres for management systems in the energy industry. Principles, normative specifications, DAkkS specifications, formalita using the example of ISO 27001

    International Nuclear Information System (INIS)

    Loubichi, Stefan

    2017-01-01

    The IT security law forced the energy industry to implement system certifications for the first time in history. In contrast to most companies in the energy industry, which often only knew about product certifications, the energy industry now has to enter new territory. Certification companies receive their legitimation in Germany through DAkkS. The DAkkS is embedded in the context of European Union law. The work of the certification companies is determined by the specifications of the DAkkS as well as by the requirements of the ISO/IEC standards. These regulations should in any case be known to a certification customer so that he knows what a certification company does or does not do. In addition, a certification customer must also know which evidence must be presented in the sense of a reference standard against the certification company. The concrete evidence in this essay is based on an ISO/IEC 27001 certification in conjunction with the IT Security Catalog of the Bundesnetzagentur. With all this knowledge, the cooperation with the certification company will not be a problem for system certification.

  18. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  19. Effect of specific industrial gases on the growth of some tree species

    Energy Technology Data Exchange (ETDEWEB)

    Antipov, V G

    1963-01-01

    Variations in the growth increment of annual rings can serve as index of the injuries effect of various industrial gases on plants. For such an objective, young trees are preferable because they are more responsive to changes of surrounding conditions and recover more rapidly after being affected by gas. The older trees react more slowly, take longer to recover, and as a rule eventually dry up. These differences may be related to the prevalence of different kinds of gas resistance (N.P. Krasinskiy, 1950) at definite ages; in the case of old trees the nature of resistant being anatomical, morphological, and physiological (less oxidation of the cell content), whereas in young trees the biological resistance to gases is greater.

  20. The Specific Features of design and process engineering in branch of industrial enterprise

    Science.gov (United States)

    Sosedko, V. V.; Yanishevskaya, A. G.

    2017-06-01

    Production output of industrial enterprise is organized in debugged working mechanisms at each stage of product’s life cycle from initial design documentation to product and finishing it with utilization. The topic of article is mathematical model of the system design and process engineering in branch of the industrial enterprise, statistical processing of estimated implementation results of developed mathematical model in branch, and demonstration of advantages at application at this enterprise. During the creation of model a data flow about driving of information, orders, details and modules in branch of enterprise groups of divisions were classified. Proceeding from the analysis of divisions activity, a data flow, details and documents the state graph of design and process engineering was constructed, transitions were described and coefficients are appropriated. To each condition of system of the constructed state graph the corresponding limiting state probabilities were defined, and also Kolmogorov’s equations are worked out. When integration of sets of equations of Kolmogorov the state probability of system activity the specified divisions and production as function of time in each instant is defined. On the basis of developed mathematical model of uniform system of designing and process engineering and manufacture, and a state graph by authors statistical processing the application of mathematical model results was carried out, and also advantage at application at this enterprise is shown. Researches on studying of loading services probability of branch and third-party contractors (the orders received from branch within a month) were conducted. The developed mathematical model of system design and process engineering and manufacture can be applied to definition of activity state probability of divisions and manufacture as function of time in each instant that will allow to keep account of loading of performance of work in branches of the enterprise.

  1. Heterogeneous reaction mechanisms and kinetics relevant to the CVD of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Creighton, J.R.; Coltrin, M.E.

    1994-03-01

    This report documents the state of the art in experimental and theoretical techniques for determining reaction mechanisms and chemical kinetics of heterogeneous reactions relevant to the chemical vapor deposition of semiconductor materials. It summarizes the most common ultra-high vacuum experimental techniques that are used and the types of rate information available from each. Several case studies of specific chemical systems relevant to the microelectronics industry are described. Theoretical methods for calculating heterogeneous reaction rate constants are also summarized.

  2. Region-specific study of the electric utility industry: problem identification, analysis, and recommendations

    Energy Technology Data Exchange (ETDEWEB)

    Pochan, M.J.

    1985-07-01

    A number of problems were identified that could stand in the way of maintaining an adequate, reliable and economic supply of electric power for the United States in the future. The problems were analyzed by studying a specific region, VACAR (Virginia-Carolinas), in some detail. It was concluded that the future power supply is in jeopardy, but that drastic changes in the present system of investor-owned utilities, specifically, deregulation or government ownership, were not justified. It was recommended that the present electric system be modified and strengthened to meet future needs. 2 refs., 8 figs., 15 tabs.

  3. Region-specific study of the electric utility industry: problem identification, analysis, and recommendations

    International Nuclear Information System (INIS)

    Pochan, M.J.

    1985-07-01

    A number of problems were identified that could stand in the way of maintaining an adequate, reliable and economic supply of electric power for the United States in the future. The problems were analyzed by studying a specific region, VACAR (Virginia-Carolinas), in some detail. It was concluded that the future power supply is in jeopardy, but that drastic changes in the present system of investor-owned utilities, specifically, deregulation or government ownership, were not justified. It was recommended that the present electric system be modified and strengthened to meet future needs. 2 refs., 8 figs., 15 tabs

  4. Field Operations and Enforcement Manual for Air Pollution Control. Volume III: Inspection Procedures for Specific Industries.

    Science.gov (United States)

    Weisburd, Melvin I.

    The Field Operations and Enforcement Manual for Air Pollution Control, Volume III, explains in detail the following: inspection procedures for specific sources, kraft pulp mills, animal rendering, steel mill furnaces, coking operations, petroleum refineries, chemical plants, non-ferrous smelting and refining, foundries, cement plants, aluminum…

  5. Evaluation of Moisture-Cure Urethane Coatings for Compliance with Industry Specifications

    Science.gov (United States)

    2011-12-01

    polyurethane coating with a thermoset binder and micaceous iron oxide pigment reinforcement. Since SSPC paint specifications are designed for zinc ...Outside Coating System No.2 (minimum AWWA OFT 7.5 mils) 1 ct. Corothane I GalvaPac Zinc Primer@ 3.0 mils dft 1 ct. Corothane Iron ox B@ 3.0 mils dft...Substrates Over properly prepared: Ferrous Metal Galvanized Metal Aluminium/Non-Ferrous Metal Ductile Iron Previously Existing Coatings

  6. Specification errors in estimating cost functions: the case of the nuclear-electric-generating industry

    International Nuclear Information System (INIS)

    Jorgensen, E.J.

    1987-01-01

    This study is an application of production-cost duality theory. Duality theory is reviewed for the competitive and rate-of-return regulated firm. The cost function is developed for the nuclear electric-power-generating industry of the United States using capital, fuel, and labor factor inputs. A comparison is made between the Generalized Box-Cox (GBC) and Fourier Flexible (FF) functional forms. The GBC functional form nests the Generalized Leontief, Generalized Square Root Quadratic and Translog functional forms, and is based upon a second-order Taylor-series expansion. The FF form follows from a Fourier-series expansion in sine and cosine terms using the Sobolev norm as the goodness-of-fit measure. The Sobolev norm takes into account first and second derivatives. The cost function and two factor shares are estimated as a system of equations using maximum-likelihood techniques, with Additive Standard Normal and Logistic Normal error distributions. In summary, none of the special cases of the GBC function form are accepted. Homotheticity of the underlying production technology can be rejected for both GBC and FF forms, leaving only the unrestricted versions supported by the data. Residual analysis indicates a slight improvement in skewness and kurtosis for univariate and multivariate cases when the Logistic Normal distribution is used

  7. Specific training in Radiation Protection for workers in the scrap metal recycling industry in Spain

    International Nuclear Information System (INIS)

    Correa Sainz, C.; Ortiz Ramis, T.; Pinilla Matos, J.L.; Fuentes Fuentes, L.; Gonzalez, C.O.

    2006-01-01

    Enresa, as signatory of the Spanish Protocol on radiological surveillance of metal materials, collaborates in the training programme for workers in the metal recycling sector. Since 1998 a total of 16 training courses have been held with a total of 332 workers from smelting and recovery companies. Furthermore information and publicity campaigns have been held for employees in the metal industry. Two types of courses are held: a Basic Course directed at first responders and an specialized Advanced Course concentrating on radiological characterisation of detected material. The evaluation of the courses by the participants has always been very positive, with the Basic Course being more popular. The practical classes are very much appreciated by the participants. In the future the Basic Course will be held once or twice per year, according to demand, and the Advanced Course will be held every two years as a minimum and always providing there is a minimum number of participants. Refresher courses for workers who are already carrying out the tasks of localisation, segregation and characterisation of radioactive material are also planned. (authors)

  8. Specific training in Radiation Protection for workers in the scrap metal recycling industry in Spain

    Energy Technology Data Exchange (ETDEWEB)

    Correa Sainz, C.; Ortiz Ramis, T. [ENRESA. Madrid (Spain); Pinilla Matos, J.L.; Fuentes Fuentes, L. [ENRESA. Centro de Almacenamiento El Cabril, Cordoba (Spain); Gonzalez, C.O. [AdQ, Madrid (Spain)

    2006-07-01

    Enresa, as signatory of the Spanish Protocol on radiological surveillance of metal materials, collaborates in the training programme for workers in the metal recycling sector. Since 1998 a total of 16 training courses have been held with a total of 332 workers from smelting and recovery companies. Furthermore information and publicity campaigns have been held for employees in the metal industry. Two types of courses are held: a Basic Course directed at first responders and an specialized Advanced Course concentrating on radiological characterisation of detected material. The evaluation of the courses by the participants has always been very positive, with the Basic Course being more popular. The practical classes are very much appreciated by the participants. In the future the Basic Course will be held once or twice per year, according to demand, and the Advanced Course will be held every two years as a minimum and always providing there is a minimum number of participants. Refresher courses for workers who are already carrying out the tasks of localisation, segregation and characterisation of radioactive material are also planned. (authors)

  9. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  10. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  11. The relationship between macroeconomic and industry-specific business cycle indicators and work-related injuries among Danish construction workers.

    Science.gov (United States)

    Nielsen, Kent Jacob; Lander, F; Lauritsen, J M

    2015-04-01

    The current study examines and compares the relationship between both macroeconomic and industry-specific business cycle indicators, and work-related injuries among construction workers in Denmark using emergency department (ED) injury data and also officially reported injuries to the Danish Working Environment Authority (WEA). The correlations between ED and WEA injury data from the catchment area of Odense University Hospital during the period 1984-2010 were tested separately for variability and trend with two general macroeconomic indicators (gross domestic product and the Danish unemployment rate) and two construction industry-specific indicators (gross value added and the number of employees). The results show that injury rates increase during economic booms and decrease during recessions. However, the regression coefficients were generally weak for both the ED (range 0.14-0.20) and WEA injuries (range 0.13-0.36). Furthermore, although there is some variability in the strength of the relationship of the different business cycle indicators, the relationships are generally not stronger for the WEA injuries than for the ED injuries, except for general unemployment. Similarly, no substantial differences in strength of relation between industry-specific and macroeconomic indicators were identified. The study shows that there was no difference in the relationship between business cycle indicators, and WEA and ED injury data. This indicates that changes in reporting behaviour do not seem to play a major role in the relation between the business cycle and workplace injuries in a Danish context. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

  12. Specifics of energy-saving technologies in electrical power supply systems of operating industrial enterprises

    OpenAIRE

    Кирисов, Игорь Геннадиевич; Овчаренко, Татьяна Ивановна

    2014-01-01

    В статье рассмотрены особенности разных энергосберегающих технологий, которые можно применить в системах электроснабжения промышленных предприятий. Проведены расчеты, подтверждающие целесообразность замены недозагруженных асинхронных двигателей на двигатели меньшей мощности. The paper deals with the speci cs of different energy-saving technologies that can be applied in electrical power supply systems of industrial enterprises. The paper presents calculations that corroborate ...

  13. Improvements in or relating to semiconductor devices

    International Nuclear Information System (INIS)

    Cooper, K.; Groves, I.S.; Leigh, P.A.; McIntyre, N.; O'Hara, S.; Speight, J.D.

    1980-01-01

    A method of producing semiconductor devices is described consisting of a series of physical and chemical techniques which results in the production of semiconductor devices such as IMPATT diodes of DC-RF efficiency and high reliability (lifetime). The diodes can be mass produced without significant variation of the technology. One of the techniques used is the high energy proton bombardment of the semiconductor material in depth to passivate specific zones. The energy of the protons is increased in stages at intervals of less than 0.11 MeV up to a predetermined maximum energy. (UK)

  14. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  15. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  16. B827 Chemical Synthhesis Project - Industrial Control System Integration - Statement of Work & Specification with Attachments 1-14

    Energy Technology Data Exchange (ETDEWEB)

    Wade, F. E. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-04-21

    The Chemical Synthesis Pilot Process at the Lawrence Livermore National Laboratory (LLNL) Site 300 827 Complex will be used to synthesize small quantities of material to support research and development. The project will modernize and increase current capabilities for chemical synthesis at LLNL. The primary objective of this project is the conversion of a non-automated hands-on process to a remoteoperation process, while providing enhanced batch process step control, stored recipe-specific parameter sets, process variable visibility, monitoring, alarm and warning handling, and comprehensive batch record data logging. This Statement of Work and Specification provides the industrial-grade process control requirements for the chemical synthesis batching control system, hereafter referred to as the “Control System” to be delivered by the System Integrator.

  17. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  18. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  19. 75 FR 24742 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Science.gov (United States)

    2010-05-05

    ... Semiconductor, Xiqing Integrated Semiconductor, Manufacturing Site, No. 15 Xinghua Road, Xiqing Economic... Malaysia Sdn. Bhd., NO. 2 Jalan SS 8/2, Free Industrial Zone, Sungai Way, 47300 Petaling Jaya, Selengor, Malaysia. Freescale Semiconductor Pte. Ltd., 7 Changi South Street 2, 03-00, Singapore 486415. Freescale...

  20. Motif formation and industry specific topologies in the Japanese business firm network

    Science.gov (United States)

    Maluck, Julian; Donner, Reik V.; Takayasu, Hideki; Takayasu, Misako

    2017-05-01

    Motifs and roles are basic quantities for the characterization of interactions among 3-node subsets in complex networks. In this work, we investigate how the distribution of 3-node motifs can be influenced by modifying the rules of an evolving network model while keeping the statistics of simpler network characteristics, such as the link density and the degree distribution, invariant. We exemplify this problem for the special case of the Japanese Business Firm Network, where a well-studied and relatively simple yet realistic evolving network model is available, and compare the resulting motif distribution in the real-world and simulated networks. To better approximate the motif distribution of the real-world network in the model, we introduce both subgraph dependent and global additional rules. We find that a specific rule that allows only for the merging process between nodes with similar link directionality patterns reduces the observed excess of densely connected motifs with bidirectional links. Our study improves the mechanistic understanding of motif formation in evolving network models to better describe the characteristic features of real-world networks with a scale-free topology.

  1. Identification of Spatial Fault Patterns in Semiconductor Wafers

    Data.gov (United States)

    National Aeronautics and Space Administration — Abstract The semiconductor industry is constantly searching for new ways to increase the rate of both process development and yield learning. As more data is being...

  2. Semiconductor nanoparticles with spatial separation of charge carriers: synthesis and optical properties

    International Nuclear Information System (INIS)

    Vasiliev, Roman B; Dirin, Dmitry N; Gaskov, Alexander M

    2011-01-01

    The results of studies on core/shell semiconductor nanoparticles with spatial separation of photoexcited charge carriers are analyzed and generalized. Peculiarities of the electronic properties of semiconductor/semiconductor heterojunctions formed inside such particles are considered. Data on the effect of spatial separation of charge carriers on the optical properties of nanoparticles including spectral shifts of the exciton bands, absorption coefficients and electron–hole pair recombination times are presented. Methods of synthesis of core/shell semiconductor nanoparticles in solutions are discussed. Specific features of the optical properties of anisotropic semiconductor nanoparticles with the semiconductor/semiconductor junctions are noted. The bibliography includes 165 references.

  3. Opportunities and Risks in Semiconductor Metrology

    Science.gov (United States)

    Borden, Peter

    2005-09-01

    New metrology opportunities are constantly emerging as the semiconductor industry attempts to meet scaling requirements. The paper summarizes some of the key FEOL and BEOL needs. These must be weighed against a number of considerations to ensure that they are good opportunities for the metrology equipment supplier. The paper discusses some of these considerations.

  4. Impact of nano particles on semiconductor manufacturing

    NARCIS (Netherlands)

    Wali, F.; Knotter, D.M.; Kuper, F.G.

    2008-01-01

    Semiconductor industry faces a continuous challenge to decrease the transistor size as well as to increase the yield by eliminating defect sources. One of the sources of particle defects is ultra pure water used in different production tools at different stages of processing. In this paper, particle

  5. Variation of solubility, biokinetics and dose coefficient of industrial uranium oxides according to the specific surface area

    International Nuclear Information System (INIS)

    Chazel, V.; Houpert, P.; Ansorbolo, E.; Henge-Napoli, M.H.; Paquet, F.

    2000-01-01

    The in vitro solubility, absorption to blood, lung retention and dose coefficient of industrial UO 2 samples were studied as a function of the specific surface area (SSA) of the particles. An in vitro study has been carried out on two samples of industrial UO 4 to compare the results with those obtained with UO 2 . Ten UO 2 samples supplied by different fuel factories or research laboratories, presented specific surface areas from 1.00 to 4.45 m 2 .g -1 . The wide range of values of SSA was due to the different conditions of fabrication. Dissolution tests in cell culture medium made on these ten samples have shown that the solubility increased 2.5-fold when the SSA increased 1.7-fold. The same tendency has been found for UO 4 , a soluble compound, and for U 3 O 8 , a moderately soluble compound. Four in vivo experiments carried out on rats by intratracheal instillation of dust suspensions of UO 2 , have highlighted the decrease in lung retention and the increase of absorption to blood with the SSA. The experimental absorption parameters calculated from the in vivo data allowed specific dose coefficients to be obtained which decreased from 6.6 to 4.3 μSv.Bq -1 when the SSA increased from 1.60 to 3.08 m 2 .g -1 . Thus, the medical monitoring of workers at the workplace has to take into account any change in the fabrication process of the uranium compound which can affect the physiochemical properties and consequently the dose coefficient. (author)

  6. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  7. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  8. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  9. Semiconductor technology for reducing emissions and increasing efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Duffin, B.; Frank, R. [Motorola Semiconductor Products Sector, Phoenix, AZ (United States)

    1997-12-31

    The cooperation and support of all industries are required to significantly impact a worldwide reduction in gaseous emissions that may contribute to climate change. Each industry also is striving to more efficiently utilize the resources that it consumes since this is both conservation for good citizenship and an intelligent approach to business. The semiconductor industry is also extremely concerned with these issues. However, semiconductor manufacturer`s products provide solutions for reduced emissions and increased efficiency in their industry, other industries and areas that can realize significant improvements through control technology. This paper will focus on semiconductor technologies of digital control, power switching and sensing to improve efficiency and reduce emissions in automotive, industrial, and office/home applications. 10 refs., 13 figs.

  10. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  11. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  12. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  13. Blasting detonators incorporating semiconductor bridge technology

    Energy Technology Data Exchange (ETDEWEB)

    Bickes, R.W. Jr.

    1994-05-01

    The enormity of the coal mine and extraction industries in Russia and the obvious need in both Russia and the US for cost savings and enhanced safety in those industries suggests that joint studies and research would be of mutual benefit. The author suggests that mine sites and well platforms in Russia offer an excellent opportunity for the testing of Sandia`s precise time-delay semiconductor bridge detonators, with the potential for commercialization of the detonators for Russian and other world markets by both US and Russian companies. Sandia`s semiconductor bridge is generating interest among the blasting, mining and perforation industries. The semiconductor bridge is approximately 100 microns long, 380 microns wide and 2 microns thick. The input energy required for semiconductor bridge ignition is one-tenth the energy required for conventional bridgewire devices. Because semiconductor bridge processing is compatible with other microcircuit processing, timing and logic circuits can be incorporated onto the chip with the bridge. These circuits can provide for the precise timing demanded for cast effecting blasting. Indeed tests by Martin Marietta and computer studies by Sandia have shown that such precise timing provides for more uniform rock fragmentation, less fly rock, reduce4d ground shock, fewer ground contaminants and less dust. Cost studies have revealed that the use of precisely timed semiconductor bridges can provide a savings of $200,000 per site per year. In addition to Russia`s vast mineral resources, the Russian Mining Institute outside Moscow has had significant programs in rock fragmentation for many years. He anticipated that collaborative studies by the Institute and Sandia`s modellers would be a valuable resource for field studies.

  14. The joint industry development of a recommended practice for the site specific assessment of mobile jackup units

    International Nuclear Information System (INIS)

    Jones, D.E.; Bennett, W.T.; Hoyle, M.J.R.

    1993-01-01

    The mobile self-elevating (drilling) unit, or jack-up, has been central to the exploration and development of offshore oil and gas reserves. In recent years there has been an increased desire to benefit from the potential economics of using these units in longer term production roles either in association with a fixed platform or as a stand-alone facility. However, until recently there had been no concerted effort to develop a consistent and commonly accepted standard for general industry use in site specific assessment of jack-ups. This paper describes the background and work carried out to develop such a standard. The project is nearing completion and has resulted in the publication of a Guideline document. A Recommended Practice and associated Commentary are (at the time of writing) in the final stage of drafting for release to the project sponsors for trial and comment prior to issuing the first Edition early in 1994

  15. Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas

    Science.gov (United States)

    Helal, Yaser H.

    Plasmas used for manufacturing processes of semiconductor devices are complex and challenging to characterize. The development and improvement of plasma processes and models rely on feedback from experimental measurements. Current diagnostic methods are not capable of measuring absolute densities of plasma species with high resolution without altering the plasma, or without input from other measurements. At pressures below 100 mTorr, spectroscopic measurements of rotational transitions in the submillimeter/terahertz (SMM) spectral region are narrow enough in relation to the sparsity of spectral lines that absolute specificity of measurement is possible. The frequency resolution of SMM sources is such that spectral absorption features can be fully resolved. Processing plasmas are a similar pressure and temperature to the environment used to study astrophysical species in the SMM spectral region. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied in the laboratory and their absorption spectra have been cataloged or are in the literature for the purpose of astrophysical study. Recent developments in SMM devices have made its technology commercially available for applications outside of specialized laboratories. The methods developed over several decades in the SMM spectral region for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500 - 750 GHz radiation through a commercial inductively coupled plasma

  16. Association of Seasonal Climate Variability and Age-Specific Mortality in Northern Sweden before the Onset of Industrialization

    Directory of Open Access Journals (Sweden)

    Joacim Rocklöv

    2014-07-01

    Full Text Available Background and aims: Little is known about health impacts of climate in pre-industrial societies. We used historical data to investigate the association of temperature and precipitation with total and age-specific mortality in Skellefteå, northern Sweden, between 1749 and 1859. Methods: We retrieved digitized aggregated population data of the Skellefteå parish, and monthly temperature and precipitation measures. A generalized linear model was established for year to year variability in deaths by annual and seasonal average temperature and cumulative precipitation using a negative binomial function, accounting for long-term trends in population size. The final full model included temperature and precipitation of all four seasons simultaneously. Relative risks (RR with 95% confidence intervals (CI were calculated for total, sex- and age-specific mortality. Results: In the full model, only autumn precipitation proved statistically significant (RR 1.02; CI 1.00–1.03, per 1cm increase of autumn precipitation, while winter temperature (RR 0.98; CI 0.95–1.00, per 1 °C increase in temperature and spring precipitation (RR 0.98; CI 0.97–1.00 per 1 cm increase in precipitation approached significance. Similar effects were observed for men and women. The impact of climate variability on mortality was strongest in children aged 3–9, and partly also in older children. Infants, on the other hand, appeared to be less affected by unfavourable climate conditions. Conclusions: In this pre-industrial rural region in northern Sweden, higher levels of rain during the autumn increased the annual number of deaths. Harvest quality might be one critical factor in the causal pathway, affecting nutritional status and susceptibility to infectious diseases. Autumn rain probably also contributed to the spread of air-borne diseases in crowded living conditions. Children beyond infancy appeared most vulnerable to climate impacts.

  17. Modelling colliding-pulse mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Bischoff, Svend

    or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

  18. Commercial-Industrial Cleaning, by Pressure-Washing, Hydro-Blasting and UHP-Jetting The Business Operating Model and How-To Manual for 450 Specific Applications

    CERN Document Server

    Maasberg, Wolfgang

    2012-01-01

    Commercial-Industrial Cleaning, by Pressure-Washing, Hydro-Blasting and UHP-Jetting is the first proprietary manual for cleaning and rehabilitation through pressure-washing, hydro-blasting and ultra high pressure water jetting (UHP).   It examines the cleaning, restoration and rehabilitation of statuary and historical structures; manufacturing hardware; and application technologies for residential, commercial and industrial areas, structures and buildings. Commercial-Industrial Cleaning, by Pressure-Washing, Hydro-Blasting and UHP-Jetting contains over 450 applications from agricultural, marine, municipal, food processing, paper-pulp, pharmaceutical and cosmetic, industrial and power generating maintenance areas. It includes gear lists to help readers easily identify the appropriate tooling and equipment for each specific application and industry.   Commercial-Industrial Cleaning, by Pressure-Washing, Hydro-Blasting and UHP-Jetting supplies readers with the tools to create a successful business model for re...

  19. Semiconductor product analysis challenges based on the 1999 ITRS

    International Nuclear Information System (INIS)

    Joseph, Thomas W.; Anderson, Richard E.; Gilfeather, Glen; LeClaire, Carole; Yim, Daniel

    2001-01-01

    One of the most significant challenges for technology characterization and failure analysis is to keep instrumentation and techniques in step with the development of technology itself. Not only are dimensions shrinking and new materials being employed, but the rate of change is increasing. According to the 1999 International Technology Roadmap for Semiconductors, 'The number and difficulty of the technical challenges continue to increase as technology moves forward'. It could be argued that technology cannot be developed without appropriate analytical techniques; nevertheless while much effort is being directed at materials and processes, only a small proportion is being directed at analysis. Whereas previous versions of the Semiconductor Industry Association roadmap contained a small number of implicit references to characterization and analysis, the 1999 ITRS contains many explicit references. It is clear that characterization is now woven through the roadmap, and technology developers in all areas appreciate the fact that new instrumentation and techniques will be required to sustain the rate of development the semiconductor industry has seen in recent years. Late in 1999, a subcommittee of the Sematech Product Analysis Forum (PAF) reviewed the ITRS and identified a 'top-ten' list of challenges which the failure analysis community will face as present technologies are extended and future technologies are developed. This paper discusses the PAF top-ten list of challenges, which is based primarily on the Difficult Challenges tables from each ITRS working group. Eight of the top-ten are challenges of significant technical magnitude; only two could be considered non-technical in nature. Most of these challenges cut across several working group areas and could be considered common threads in the roadmap, ranging from fault simulation and modeling to imaging small features, from electrical defect isolation to deprocessing. While evolutionary changes can be anticipated

  20. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  1. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  2. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  3. Applying Machine Learning to Workers' Compensation Data to Identify Industry-Specific Ergonomic and Safety Prevention Priorities: Ohio, 2001 to 2011.

    Science.gov (United States)

    Meyers, Alysha R; Al-Tarawneh, Ibraheem S; Wurzelbacher, Steven J; Bushnell, P Timothy; Lampl, Michael P; Bell, Jennifer L; Bertke, Stephen J; Robins, David C; Tseng, Chih-Yu; Wei, Chia; Raudabaugh, Jill A; Schnorr, Teresa M

    2018-01-01

    This study leveraged a state workers' compensation claims database and machine learning techniques to target prevention efforts by injury causation and industry. Injury causation auto-coding methods were developed to code more than 1.2 million Ohio Bureau of Workers' Compensation claims for this study. Industry groups were ranked for soft-tissue musculoskeletal claims that may have been preventable with biomechanical ergonomic (ERGO) or slip/trip/fall (STF) interventions. On the basis of the average of claim count and rate ranks for more than 200 industry groups, Skilled Nursing Facilities (ERGO) and General Freight Trucking (STF) were the highest risk for lost-time claims (>7 days). This study created a third, major causation-specific U.S. occupational injury surveillance system. These findings are being used to focus prevention resources on specific occupational injury types in specific industry groups, especially in Ohio. Other state bureaus or insurers may use similar methods.

  4. Green interconnecting materials for semiconductor industry

    NARCIS (Netherlands)

    Matin, M.A.; Vellinga, W.P.; Geers, M.G.D.; Sawada, K.; Ishida, M.

    2009-01-01

    Interconnecting materials experience a complex thermo-mechanical load in applications. This may lead to the formation of macroscopic cracks resulting from induced stresses of the differences in thermal expansion coefficients on a sample scale (since different materials are involved) and on a grain

  5. Firm-specific impacts of CO_2 prices on the stock market value of the Spanish power industry

    International Nuclear Information System (INIS)

    Pereira da Silva, Patricia; Moreno, Blanca; Figueiredo, Nuno Carvalho

    2016-01-01

    European Union carbon emissions allowances (EUA) price fluctuations can affect electricity companies' stock market values as these oscillations may change firms' profitability and thus investors' decisions. This outcome can differ not only contingent on the EU ETS Phase, but also on firms' generation mix. Moreover, stock markets may react differently to EUA increases in comparison to decreases, thus asymmetrically. By using daily data from January 2008 to July 2014, this article analyses long-run equilibrium relations and short-run interactions between the aggregated electricity industry stock market returns and EUA price changes. Moreover, we test if the relationship between EUA price variations and electricity stock returns is asymmetric and if the carbon price effect and the asymmetry are power firm-specific. Adding to earlier studies, we initially provide an inspection of the individual impact of EU ETS Phase II and on-going Phase III; followed by a comparative analysis between power firms which core activity relies on renewable energy sources and those whose sources are fundamentally non-renewable ones. A statistically significant positive long-run impact of EU ETS on the aggregated power sector stock market return is found concerning Phase II and works asymmetrically. Moreover, evidence is provided demonstrating that asymmetry and EUA effects are power firm-specific. - Highlights: •EU ETS impacts on stock market returns of Spanish power sector. •Long-run positive effect of EU ETS on market returns is found only in Phase II. •No short-run effects were found. •EUA price effect is company-specific.

  6. Comparative study of the different industrial manufacturing routes for UO2 pellet specifications through the wet process

    International Nuclear Information System (INIS)

    Palheiros, Franklin; Gonzaga, Reinaldo; Soares, Alexandre

    2009-01-01

    In the fuel cycle, converting UF 6 to UO 2 powder is an intermediate step for fabrication of pellets for fuel assemblies to be used in nuclear power plants. The basic proposal common to the different powder fabrication processes is to provide raw material capable of being processed into the form of pellets. The wet processes is the most often used industrially and are divided in two categories: the ADU (Ammonium Diuranate) and AUC (Ammonium Uranyl Carbonate) processes, whose names originate in the precipitate obtained in aqueous solution during the intermediate steps of UO 2 powder fabrication. It has known that the powder characteristics have a considerable influence in the UO 2 pellet manufacturing and quality characteristics. INB has used the AUC process to produce UO 2 pellets and supply fuel to Angra 1 and 2 Nuclear Power Plants. Despite of this process is characterized by the precipitation of a different intermediate precipitate compared to the ADU route (i.e., (NH 4 ) 4 UO 2 (CO 3 ) 3 , in the AUC process, and (NH 4 ) 2 U 2 O 7 in ADU process) leading to some slight differences in the final pellet microstructure, it has been considered that the models that predict the pellet behavior during irradiation in a nuclear reactor are basically the same compared to those used to predict the pellets form the ADU process. In order to evaluate how different the pellets originated from these two industrial routes are, this paper aims to compare the INB production historical data (Angra 1, Cycles 14 and 15) with the key parameters of a common product specification from the ADU process. (author)

  7. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  8. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  9. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  10. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  11. How to Engage Children into the World of Traditional Car Brands? Exploration of Specific Touchpoints between Future Buyers in the Car Industry and Established Brands

    Directory of Open Access Journals (Sweden)

    Kamila Mikolajová

    2017-10-01

    Full Text Available This paper aims to define the consumer journey of children through their childhood stages and provide specific touchpoints relevant for a given age, which could be integrated into the marketing communication of car brands to start building this young audience as future buyers. A qualitative study of children in different age brackets was used to identify their current and potential touchpoints with the car industry. The results of the study present specific stands on the prepurchase stage of the children’s consumer journey where the brand might interact with children and build the long-term positive attitudes of this group of potential customers. Specific implications for the industry in terms of understanding the language of the mobile game applications, computer games, YouTubers and integrating those specific activities into the brand’s marketing communication are highlighted for the car industry marketers.

  12. Insulated InP (100) semiconductor by nano nucleus generation in pure water

    Science.gov (United States)

    Ghorab, Farzaneh; Es'haghi, Zarrin

    2018-01-01

    Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

  13. Spectroscopic characterization of III-V semiconductor nanomaterials

    Science.gov (United States)

    Crankshaw, Shanna Marie

    III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored

  14. Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

    Science.gov (United States)

    Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

    2017-02-01

    Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

    Science.gov (United States)

    Ólafsson, Sveinn; Sveinbjörnsson, Einar

    2010-12-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

  16. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  17. 40 CFR 270.22 - Specific part B information requirements for boilers and industrial furnaces burning hazardous...

    Science.gov (United States)

    2010-07-01

    ... requirements for boilers and industrial furnaces burning hazardous waste. 270.22 Section 270.22 Protection of... requirements for boilers and industrial furnaces burning hazardous waste. When an owner or operator of a cement kiln, lightweight aggregate kiln, solid fuel boiler, liquid fuel boiler, or hydrochloric acid...

  18. Stability of semiconductor memory characteristics in a radiation environment

    OpenAIRE

    Fetahović, I.; Vujisić, M.; Stanković, K.; Dolićanin, E.

    2015-01-01

    Radiation defects in electronic device can occur in a process of its fabrication or during use. Miniaturization trends in industry and increase in level of integration of electronic components have negative affect on component's behavior in a radiation environment. The aim of this paper is to analyze radiation effects in semiconductor memories and to establish how ionizing radiation influences characteristics and functionality of semiconductor memories. Both the experimental procedure and sim...

  19. TSOM method for semiconductor metrology

    Science.gov (United States)

    Attota, Ravikiran; Dixson, Ronald G.; Kramar, John A.; Potzick, James E.; Vladár, András E.; Bunday, Benjamin; Novak, Erik; Rudack, Andrew

    2011-03-01

    Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement sensitivity using conventional optical microscopes; measurement sensitivities are comparable to what is typical when using scatterometry, scanning electron microscopy (SEM), and atomic force microscopy (AFM). TSOM can be used in both reflection and transmission modes and is applicable to a variety of target materials and shapes. Nanometrology applications that have been demonstrated by experiments or simulations include defect analysis, inspection and process control; critical dimension, photomask, overlay, nanoparticle, thin film, and 3D interconnect metrologies; line-edge roughness measurements; and nanoscale movements of parts in MEMS/NEMS. Industries that could benefit include semiconductor, data storage, photonics, biotechnology, and nanomanufacturing. TSOM is relatively simple and inexpensive, has a high throughput, and provides nanoscale sensitivity for 3D measurements with potentially significant savings and yield improvements in manufacturing.

  20. Lung function, atopy, specific hypersensitivity, and smoking of workers in the enzyme detergent industry over 11 years.

    Science.gov (United States)

    Flood, D F; Blofeld, R E; Bruce, C F; Hewitt, J I; Juniper, C P; Roberts, D M

    1985-01-01

    A study of 2800 workers employed in three factories of the two major manufacturers of enzymatic products in the United Kingdom covering 11 years of operation from 1969 to 1980 showed that 2344 workers had sufficient lung function data to meet the operational criteria and these were analysed in three separate groups by factory locations. Spirometry and prick tests for specific skin reactions to standardised enzyme were performed at six monthly intervals for the first six years of the study and then annually. Factory enzyme dust and total dust measurements were made to determine the degree of dust exposure of the subjects. The lung function of the factory groups was analysed for the effects of working in the detergent industry, the degree of exposure to enzymes, skin prick test positivity to enzymes, atopicity, and smoking. The 4.5% of workers who had experienced respiratory effects from enzymes were analysed separately. Exposure to the enzyme allergen has had no significant long term effect on the lung function of the detergent workers. A higher proportion of atopics than non-atopics became skin test positive to the allergen and more smokers than non-smokers were sensitised. The overall lung function of detergent workers showed 39 ml/year loss in FEV1 on the 11 year longitudinal study and 51 ml/year loss on the lateral (cross sectional) analysis with better lung function in the south east than the north west of England. In the development of the methodology for the study several potential problems were discovered that could remain unrecognised in a cross sectional analysis performed in isolation.

  1. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  2. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  3. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  4. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  5. Theory of semiconductor junction devices a textbook for electrical and electronic engineers

    CERN Document Server

    Leck, J H

    1967-01-01

    Theory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations, specifically Poisson's and the Hall effect equations. This book provides the fundamental theory relevant for the understanding of semiconductor device theory. Comprised of 10 chapters, this book starts with an overview of the application of band theory to the special case of semiconductors, both intrinsic and extrinsic. This text then describes the electrical properties of conductivity, semiconductors, and Hall effe

  6. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  7. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  8. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  9. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  10. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  11. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  12. Testing methodologies and systems for semiconductor optical amplifiers

    Science.gov (United States)

    Wieckowski, Michael

    Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

  13. Selective photochemical dry etching of compound semiconductors

    International Nuclear Information System (INIS)

    Ashby, C.I.H.

    1988-01-01

    When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

  14. Developing New Nanoprobes from Semiconductor Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua [Univ. of California, Berkeley, CA (United States)

    2006-01-01

    In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.

  15. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  16. The Computer Industry. High Technology Industries: Profiles and Outlooks.

    Science.gov (United States)

    International Trade Administration (DOC), Washington, DC.

    A series of meetings was held to assess future problems in United States high technology, particularly in the fields of robotics, computers, semiconductors, and telecommunications. This report, which focuses on the computer industry, includes a profile of this industry and the papers presented by industry speakers during the meetings. The profile…

  17. Ion sources for industrial use

    International Nuclear Information System (INIS)

    Sakudo, Noriyuki

    1994-01-01

    Industrial applications of ion beams began in the 1970's with their application in fabrication of semiconductor devices. Since then, various improvements have been carried out for source lifetimes, current levels and diversification of ion species. Nowadays, ion beams are expected to be used for surface modification of materials as well as semiconductor fabrication. In this report, some of the typical ion sources are reviewed from the viewpoint of future industrial use. (author)

  18. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  19. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  20. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  1. Nuclear industry technology boomerang

    International Nuclear Information System (INIS)

    Scholler, R.W.

    1987-01-01

    The benefits to the medical, pharmaceutical, semiconductor, computer, video, bioscience, laser, defense, and numerous high-tech industries from nuclear technology development fallout are indeed numerous and increase every day. Now those industries have made further progress and improvements that, in return, benefit the nuclear industry. The clean-air and particle-free devices and enclosures needed for protection and decontamination are excellent examples

  2. Thermodynamic concepts in semiconductor quantum dot technology

    International Nuclear Information System (INIS)

    Shchukin, V.

    2001-01-01

    Major trends of the modern civilization are related to the changing of the industrial society into an information and knowledge-based society. This transformation is to a large extent based on the modern information and communication technology. The nobel prize-2000 in physics is a remarkable recognition of an extremely high significance of this kind of technology. The nobel prize has been awarded with one half jointly to Zhores I. Alferov and Herbert Kroemer for developing semiconductor heterostructures used in high-speed- and opto-electronics and one half to Jack St. Clair Kilby for this part in the invention of the integrated circuit. The development of the semiconductor heterostructures technology requires a profound understanding of the basic growth mechanisms involved in any technological process, including any type of epitaxy, either the liquid phase epitaxy (LPE), or the metalorganic vapor phase epitaxy (MOVPE), or the molecular beam epitaxy (MBE). Starting from this pioneering works on semiconductor heterostructures till present time, Professor Zh. Alferov has always paid much attention to complex and comprehensive study of the subject. This covers the growth - as well as the post-growth technology including the theoretical modeling of the technology, the characterization of the heterostructures, and the device design. Such complex approach has master mined the scientific and technological success of Abraham loffe Institute in the area of semiconductor heterostructures, and later, nano structures. (Orig../A.B.)

  3. Industry Study, Electronics Industry, Spring 2009

    Science.gov (United States)

    2009-01-01

    not have the flexibility in their processes to quickly produce custom system-on-chips because they are optimized for high-end production. Dell ...building its semiconductor industry, Malaysia has moved in the same overall directions but has lagged a few years. Malaysia has succeeded in the backend

  4. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  5. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  6. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  7. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  8. Fundamentals of semiconductor processing technology

    CERN Document Server

    El-Kareh, Badih

    1995-01-01

    The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac­ turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil­ ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech­ n...

  9. Fabrication of prototypes of Ge(li) semiconductor detector

    International Nuclear Information System (INIS)

    Santos, W.M.S.; Marti, G.V.; Rizzo, P.; Barros, S. de.

    1987-01-01

    The fabrication process of Ge(Li) semiconductor detector prototypes, from specific chemical treatments of doped monocrystal with receptor impurities (p + semicondutor) is presented. The detector characteristics, such as resulotion and operation tension are shown. (M.C.K.) [pt

  10. Technological competence and competitiveness of Korea industry

    International Nuclear Information System (INIS)

    Lee, Geun

    1997-06-01

    This book introduces technology and competitiveness and industrial policy of economics, technological competence and technological innovation system of Korea, a newly industrialized country, development of technological innovation and competence of semiconductor industry, development of technological innovation and competence of synthetic fiber industry, development of technological innovation and competence of machine tool industry, development of technological competence of automobile industry, improvement and delay of technological competence of computer industry, and development of technological innovation and competitiveness of appliance industry.

  11. Semiconductor nanostructures for artificial photosynthesis

    Science.gov (United States)

    Yang, Peidong

    2012-02-01

    Nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have already been demonstrated as important materials for different energy conversion. One emerging and exciting direction is their application for solar to fuel conversion. The generation of fuels by the direct conversion of solar energy in a fully integrated system is an attractive goal, but no such system has been demonstrated that shows the required efficiency, is sufficiently durable, or can be manufactured at reasonable cost. One of the most critical issues in solar water splitting is the development of a suitable photoanode with high efficiency and long-term durability in an aqueous environment. Semiconductor nanowires represent an important class of nanostructure building block for direct solar-to-fuel application because of their high surface area, tunable bandgap and efficient charge transport and collection. Nanowires can be readily designed and synthesized to deterministically incorporate heterojunctions with improved light absorption, charge separation and vectorial transport. Meanwhile, it is also possible to selectively decorate different oxidation or reduction catalysts onto specific segments of the nanowires to mimic the compartmentalized reactions in natural photosynthesis. In this talk, I will highlight several recent examples in this lab using semiconductor nanowires and their heterostructures for the purpose of direct solar water splitting.

  12. Dopants and defects in semiconductors

    CERN Document Server

    McCluskey, Matthew D

    2012-01-01

    "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … The book will be most useful for beginning graduate students in materials science. … an easy reading, broad introductory overview of the field …"-Materials Today, July-August 2012"… well written, with clear, lucid explanations …"-Chemistry World"The scientific development towards the method of controllable doping transformed the erratic and not reproducible family of semiconductor materials into the truly wonderful basis of modern microelectronics. This book tells the remarkable success story and I recommend it!"-Hans J. Queisser, Max-Planck-Institute, Stuttgart, Germany"McCluskey and Haller have written an outstanding modern guide to this field that will be useful to newcomers, and also to active researchers who want to broaden their horizons, as a means to learn the capabilities and limitations of the many techniques that are used in semiconductor-defect science."-Professor Michael J....

  13. Comparative genomics reveals high biological diversity and specific adaptations in the industrially and medically important fungal genus Aspergillus

    DEFF Research Database (Denmark)

    de Vries, Ronald P.; Riley, Robert; Wiebenga, Ad

    2017-01-01

    Background:  The fungal genus Aspergillus is of critical importance to humankind. Species include those with industrial applications, important pathogens of humans, animals and crops, a source of potent carcinogenic contaminants of food, and an important genetic model. The genome sequences of eig...

  14. Effectively Adapting the Sport Management Curricula: Harnessing Internal and External Resources to Address Industry-Specific Needs

    Science.gov (United States)

    Braunstein-Minkove, Jessica R.; DeLuca, Jaime R.

    2015-01-01

    Academic programs must constantly evolve in order to ensure that students are best prepared for success in internships and subsequent post-collegiate endeavors within the dynamic, rapidly changing sport industry. Based upon qualitative research, this work assesses and recommends areas of development in sport management curricula using internal and…

  15. Performance specifications for pack support types to cater for the variety of geotechnical areas encountered in the mining industry.

    CSIR Research Space (South Africa)

    Kullmann, D

    1999-03-01

    Full Text Available of packs. In order to complete this work, it was first deemed necessary to establish what types of packs are currently used in the mining industry, variations of these types and their prominence. Previous attempts at collecting this information had not been...

  16. Soft X-ray spectromicroscopy and application to semiconductor microstructure characterization

    International Nuclear Information System (INIS)

    Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z.; Warwick, A.; Padmore, H.A.; Triplett, B.B.

    1997-01-01

    The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved by conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at thr Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An Advanced Light Source μ-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers. (author)

  17. Soft X-ray spectromicroscopy and its application to semiconductor microstructure characterization

    International Nuclear Information System (INIS)

    Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z.

    1996-01-01

    The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An ALS(mu)-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers

  18. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  19. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  20. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  1. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  2. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  3. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  4. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  6. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  7. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  9. Control of Orphan Sources and Other Radioactive Material in the Metal Recycling and Production Industries. Specific Safety Guide (Arabic Edition)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2014-09-01

    Accidents involving orphan sources and other radioactive material in the metal recycling and production industries have resulted in serious radiological accidents as well as in harmful environmental, social and economic impacts. This Safety Guide provides recommendations, the implementation of which should prevent such accidents and provide confidence that scrap metal and recycled products are safe. Contents: 1. Introduction; 2. Protection of people and the environment; 3. Responsibilities; 4. Monitoring for radioactive material; 5. Response to the discovery of radioactive material; 6. Remediation of contaminated areas; 7. Management of recovered radioactive material; Annex I: Review of events involving radioactive material in the metal recycling and production industries; Annex II: Categorization of radioactive sources; Annex III: Some examples of national and international initiatives.

  10. Control of Orphan Sources and Other Radioactive Material in the Metal Recycling and Production Industries. Specific Safety Guide

    International Nuclear Information System (INIS)

    2014-01-01

    Accidents involving orphan sources and other radioactive material in the metal recycling and production industries have resulted in serious radiological accidents as … well as in harmful environmental, social and economic impacts. This Safety Guide provides recommendations, the implementation of which should prevent such accidents and provide confidence that scrap metal and recycled products are safe. Contents: 1. Introduction; 2. Protection of people and the environment; 3. Responsibilities; 4. Monitoring for radioactive material; 5. Response to the discovery of radioactive material; 6. Remediation of contaminated areas; 7. Management of recovered radioactive material; Annex I: Review of events involving radioactive material in the metal recycling and production industries; Annex II: Categorization of radioactive sources; Annex III: Some examples of national and international initiatives

  11. Control of Orphan Sources and Other Radioactive Material in the Metal Recycling and Production Industries. Specific Safety Guide (Arabic Edition)

    International Nuclear Information System (INIS)

    2014-01-01

    Accidents involving orphan sources and other radioactive material in the metal recycling and production industries have resulted in serious radiological accidents as well as in harmful environmental, social and economic impacts. This Safety Guide provides recommendations, the implementation of which should prevent such accidents and provide confidence that scrap metal and recycled products are safe. Contents: 1. Introduction; 2. Protection of people and the environment; 3. Responsibilities; 4. Monitoring for radioactive material; 5. Response to the discovery of radioactive material; 6. Remediation of contaminated areas; 7. Management of recovered radioactive material; Annex I: Review of events involving radioactive material in the metal recycling and production industries; Annex II: Categorization of radioactive sources; Annex III: Some examples of national and international initiatives

  12. Control of Orphan Sources and Other Radioactive Material in the Metal Recycling and Production Industries. Specific Safety Guide

    International Nuclear Information System (INIS)

    2012-01-01

    Accidents involving orphan sources and other radioactive material in the metal recycling and production industries have resulted in serious radiological accidents as well as in harmful environmental, social and economic impacts. This Safety Guide provides recommendations, the implementation of which should prevent such accidents and provide confidence that scrap metal and recycled products are safe. Contents: 1. Introduction; 2. Protection of people and the environment; 3. Responsibilities; 4. Monitoring for radioactive material; 5. Response to the discovery of radioactive material; 6. Remediation of contaminated areas; 7. Management of recovered radioactive material; Annex I: Review of events involving radioactive material in the metal recycling and production industries; Annex II: Categorization of radioactive sources; Annex III: Some examples of national and international initiatives.

  13. Control of Orphan Sources and Other Radioactive Material in the Metal Recycling and Production Industries. Specific Safety Guide (Spanish Edition)

    International Nuclear Information System (INIS)

    2013-01-01

    Accidents involving orphan sources and other radioactive material in the metal recycling and production industries have resulted in serious radiological accidents as well as in harmful environmental, social and economic impacts. This Safety Guide provides recommendations, the implementation of which should prevent such accidents and provide confidence that scrap metal and recycled products are safe. Contents: 1. Introduction; 2. Protection of people and the environment; 3. Responsibilities; 4. Monitoring for radioactive material; 5. Response to the discovery of radioactive material; 6. Remediation of contaminated areas; 7. Management of recovered radioactive material; Annex I: Review of events involving radioactive material in the metal recycling and production industries; Annex II: Categorization of radioactive sources; Annex III: Some examples of national and international initiatives

  14. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  15. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  16. A study of success and failure in product innovation with specific reference to the South African electronics industry

    OpenAIRE

    2014-01-01

    M.Com. (Business Management) The innovation and marketing of new products has become increasingly important for the profitability of companies. Developing new products is a risky endeavour. Research shows that new product development often fails. As such, it is very important that product development managers are aware of the factors that can cause product failure. This research studied the product innovation process in the South African electronics industry. The objective of the study was...

  17. 77 FR 25747 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Institution of...

    Science.gov (United States)

    2012-05-01

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-840] Certain Semiconductor Integrated Circuit... States after importation of certain semiconductor integrated circuit devices and products containing same... No. 6,847,904 (``the '904 patent''). The complaint further alleges that an industry in the United...

  18. 77 FR 60721 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Notice of...

    Science.gov (United States)

    2012-10-04

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-840] Certain Semiconductor Integrated... certain semiconductor integrated circuit devices and products containing same by reason of infringement of...,783; and 6,847,904. The complaint further alleges the existence of a domestic industry. The Commission...

  19. 76 FR 79215 - Certain Semiconductor Chips With Dram Circuitry, and Modules and Products Containing Same...

    Science.gov (United States)

    2011-12-21

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-819] Certain Semiconductor Chips With... importation, and the sale within the United States after importation of certain semiconductor chips with DRAM.... 7,906,809 (``the `809 patent''). The complaint further alleges that an industry in the United States...

  20. Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

    Science.gov (United States)

    Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

    1998-01-01

    The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

  1. 76 FR 14688 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Science.gov (United States)

    2011-03-17

    ... existence of a domestic industry. The Commission's notice of investigation named several respondents...; Freescale Semiconductor Malaysia Sdn. Bhd. of Malaysia; Freescale Semiconductor Pte. Ltd. of Singapore; Mouser Electronics, Inc. of Mansfield, Texas; and Motorola Inc. of Schaumburg, Illinois. On August 16...

  2. Experimental Methods for Implementing Graphene Contacts to Finite Bandgap Semiconductors

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob

    Present Ph.D. thesis describes my work on implanting graphene as electrical contact to finite bandgap semiconductors. Different transistor architectures, types of graphene and finite bandgap semiconductors have been employed. The device planned from the beginning of my Ph.D. fellowship...... contacts to semiconductor nanowires, more specifically, epitaxially grown InAs nanowires. First, we tried a top down method where CVD graphene was deposited on substrate supported InAs nanowires followed by selective graphene ashing to define graphene electrodes. While electrical contact between...

  3. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    International Nuclear Information System (INIS)

    Birner, Stefan

    2011-01-01

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano 3 software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano 3 software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model to recently

  4. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Birner, Stefan

    2011-11-15

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model

  5. Architectures for Improved Organic Semiconductor Devices

    Science.gov (United States)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

  6. Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices

    CERN Document Server

    Merten, K; Bulirsch, R

    1990-01-01

    Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in­ cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con­ nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues dis...

  7. Oxide Dispersion Strengthened Fe(sub 3)Al-Based Alloy Tubes: Application Specific Development for the Power Generation Industry

    Energy Technology Data Exchange (ETDEWEB)

    Kad, B.K.

    1999-07-01

    A detailed and comprehensive research and development methodology is being prescribed to produce Oxide Dispersion Strengthened (ODS)-Fe3Al thin walled tubes, using powder extrusion methodologies, for eventual use at operating temperatures of up to 1100C in the power generation industry. A particular 'in service application' anomaly of Fe3Al-based alloys is that the environmental resistance is maintained up to 1200C, well beyond where such alloys retain sufficient mechanical strength. Grain boundary creep processes at such high temperatures are anticipated to be the dominant failure mechanism.

  8. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-12-15

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

  9. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al 2 O 3 and HfO 2 . However, there has been much effort to deposit ternary oxides, such as perovskites (ABO 3 ), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable

  10. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  11. Semiconductor detectors in current energy dispersive X-ray spectral analysis

    Energy Technology Data Exchange (ETDEWEB)

    Betin, J; Zhabin, E; Krampit, I; Smirnov, V

    1980-04-01

    A review is presented of the properties of semiconductor detectors and of the possibilities stemming therefrom of using the detectors in X-ray spectral analysis in industries, in logging, in ecology and environmental control, in medicine, etc.

  12. Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains

    KAUST Repository

    Diao, Ying; Tee, Benjamin C-K.; Giri, Gaurav; Xu, Jie; Kim, Do Hwan; Becerril, Hector A.; Stoltenberg, Randall M.; Lee, Tae Hoon; Xue, Gi; Mannsfeld, Stefan C. B.; Bao, Zhenan

    2013-01-01

    Solution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control

  13. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  14. Semiconductor Research Corporation: A Case Study in Cooperative Innovation Partnerships

    Science.gov (United States)

    Logar, Nathaniel; Anadon, Laura Diaz; Narayanamurti, Venkatesh

    2014-01-01

    In the study of innovation institutions, it is important to consider how different institutional models can affect a research organization in conducting or funding successful work. As an industry collaborative, Semiconductor Research Corporation (SRC) provides an example of a privately funded institution that leverages the inputs of several member…

  15. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  16. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  17. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  18. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  19. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  20. Radiological source tracking in oil/gas, medical and other industries: requirements and specifications for passive RFID technology

    Energy Technology Data Exchange (ETDEWEB)

    Dowla, Farid U. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2016-01-01

    Subsurface sensors that employ radioisotopes, such 241Am-Be and 137Cs, for reservoir characterization must be tracked for safety and security reasons. Other radiological sources are also widely used in medicine. The radiological source containers, in both applications, are small, mobile and used widely worldwide. The nuclear sources pose radiological dispersal device (RDD) security risks. Security concerns with the industrial use of radionuclide sources is in fact quite high as it is estimated that each year hundreds of sealed sources go missing, either lost or stolen. Risk mitigation efforts include enhanced regulations, source-use guidelines, research and development on electronic tracking of sources. This report summarizes the major elements of the requirements and operational concepts of nuclear sources with the goal of developing automated electronic tagging and locating systems.

  1. General Industrial Electronics. Oklahoma Trade and Industrial Education.

    Science.gov (United States)

    Harwick, Jim; Siebert, Leo

    This curriculum guide, part of a series of curriculum guides dealing with industrial electricity and electronics, is designed for use in teaching a course in general industrial electronics. Covered in the first half of the guide are units on the following electronic components: semiconductors, solid-state diodes, bipolar transistors, and special…

  2. Coherent diffractive imaging methods for semiconductor manufacturing

    Science.gov (United States)

    Helfenstein, Patrick; Mochi, Iacopo; Rajeev, Rajendran; Fernandez, Sara; Ekinci, Yasin

    2017-12-01

    The paradigm shift of the semiconductor industry moving from deep ultraviolet to extreme ultraviolet lithography (EUVL) brought about new challenges in the fabrication of illumination and projection optics, which constitute one of the core sources of cost of ownership for many of the metrology tools needed in the lithography process. For this reason, lensless imaging techniques based on coherent diffractive imaging started to raise interest in the EUVL community. This paper presents an overview of currently on-going research endeavors that use a number of methods based on lensless imaging with coherent light.

  3. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    International Nuclear Information System (INIS)

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-01-01

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally

  4. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  5. Morbidity from primary glaucoma and its gender-specific aspects amongst the population of Siberian industrial town

    Directory of Open Access Journals (Sweden)

    A. L. Onischenko

    2015-01-01

    Full Text Available Aim: To analyze visual morbidity attributable to primary glaucoma, its eight-year dynamics, and gender differences in Siberian industrial town inhabitants.Methods: Medical records (out-patient and in-patient departments from the database of the sectional information analysis center of Novokuznetsk Health Administration over an eight-year period (2004-2011 were studied. Individual patients diagnosed with primary glaucoma in 2004‑2011 were reviewed only.Results: Standardized primary glaucoma morbidity rate in men and women aged over 40 years was 3.5±0.3 ‰ and 2.6±0.26 ‰, respectively. Men were diagnosed with primary glaucoma earlier than women. In male residents aged over 70 years, primary glaucoma was found more often than in female residents. Male glaucoma patients required in-patient treatment more often than female patients. Primary glaucoma was diagnosed in men and women at 66.1±11.6 and 67.0±10.9 years (on average, respectively (U = 2.27, p = 0.023. 441 of 5424 patients (8.1 % diagnosed with glaucoma in 2004‑2011 subsequently died. The average age at death was 69.0±7.2 years, the median (25 %; 75 % was 71 years (66 years; 75 years. Patients who were diagnosed with primary glaucoma survived for 2.6±1.8 years. The median (25 %; 75 % was 2 years (1 year; 4 years. The distribution of the variable that characterized the difference between the age at death and the age of diagnosis making was abnormal (D = 0.151, p<0.001. Half of glaucoma patients died in the first two years after glaucoma has been diagnosed. Less than 20 % of patients (16 % men, 18 % women survived for ≥4 years after primary glaucoma diagnosis has been made. Conclusion: The analysis of morbidity and mortality rates as well as disability due to impaired vision is of great importance to health official and practitioners. Stably low glaucoma morbidity rate in Siberian industrial town inhabitants indicates a great lack of glaucoma specialists and forces

  6. Cancer incidence and specific occupational exposures in the Swedish leather tanning industry: a cohort based case-control study.

    Science.gov (United States)

    Mikoczy, Z; Schütz, A; Strömberg, U; Hagmar, L

    1996-01-01

    OBJECTIVE--To study the effect on the incidence of cancer of exposure to chemicals handled in the leather tanning industry. MATERIALS AND METHODS--A case-control study was performed within a cohort of 2487 workers employed for at least six months during the period 1900-89 in three Swedish leather tanneries. 68 cancer cases (lung, stomach, bladder, kidney, nasal, and pancreatic cancers and soft tissue sarcomas) and 178 matched controls were studied. Effects of chemical exposures on cancer incidence, adjusted for age at risk, sex, and plant were estimated with a conditional logistic regression model. RESULTS--A significant association was found between exposure to leather dust and pancreatic cancer (odds ratio (OR) 7.19, 95% confidence interval (95% CI) 1.44 to 35-89). An association was indicated between leather dust from vegetable tanning and lung cancer. After adjustment for smoking habits a tentative association between organic solvents and lung cancer lost its significance. No association was found between exposure to chlorophenols and soft tissue sarcomas. CONCLUSIONS--The significant association between leather tanning and soft tissue sarcomas that was found in our previous cohort analysis could not be explained by exposure to chlorophenols. On the other hand a significant association was found between exposure to leather dust and pancreatic cancer, and exposure to leather dust from vegetable tanning was often present in cases with lung cancer. Due to the small numbers of cases, the results can, however, only lead to tentative conclusions. PMID:8704870

  7. Development of a simple measurement scale to evaluate the severity of non-specific low back pain for industrial ergonomics.

    Science.gov (United States)

    Higuchi, Yoshiyuki; Izumi, Hiroyuki; Kumashiro, Mashaharu

    2010-06-01

    This study developed an assessment scale that hierarchically classifies degrees of low back pain severity. This assessment scale consists of two subscales: 1) pain intensity; 2) pain interference. First, the assessment scale devised by the authors was used to administer a self-administered questionnaire to 773 male workers in the car manufacturing industry. Subsequently, the validity of the measurement items was examined and some of them were revised. Next, the corrected low back pain scale was used in a self-administered questionnaire, the subjects of which were 5053 ordinary workers. The hierarchical validity between the measurement items was checked based on the results of Mokken Scale analysis. Finally, a low back pain assessment scale consisting of seven items was perfected. Quantitative assessment is made possible by scoring the items and low back pain severity can be classified into four hierarchical levels: none; mild; moderate; severe. STATEMENT OF RELEVANCE: The use of this scale devised by the authors allows a more detailed assessment of the degree of risk factor effect and also should prove useful both in selecting remedial measures for occupational low back pain and evaluating their efficacy.

  8. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  9. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  10. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  11. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  12. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  13. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  14. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  15. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  16. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  17. Rare resource supply crisis and solution technology for semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Hu, Sophia; Yoo, Youngsun; Takahisa, Kenji; Enami, Tatsuo

    2016-03-01

    There are growing concerns over future environmental impact and earth resource shortage throughout the world and in many industries. Our semiconductor industry is not excluded. "Green" has become an important topic as production volume become larger and more powerful. Especially, the rare gases are widely used in semiconductor manufacturing because of its inertness and extreme chemical stability. One major component of an Excimer laser system is Neon. It is used as a buffer gas for Argon (Ar) and Krypton (Kr) gases used in deep ultraviolet (DUV) lithography laser systems. Since Neon gas accounting for more than 96% of the laser gas mixture, a fairly large amount of neon gas is consumed to run these DUV lasers. However, due to country's instability both in politics and economics in Ukraine, the main producer of neon gas today, supply reduction has become an issue and is causing increasing concern. This concern is not only based on price increases, but has escalated to the point of supply shortages in 2015. This poses a critical situation for the semiconductor industry, which represents the leading consumer of neon gas in the world. Helium is another noble gas used for Excimer laser operation. It is used as a purge gas for optical component modules to prevent from being damaged by active gases and impurities. Helium has been used in various industries, including for medical equipment, linear motor cars, and semiconductors, and is indispensable for modern life. But consumption of helium in manufacturing has been increased dramatically, and its unstable supply and price rise has been a serious issue today. In this article, recent global supply issue of rare resources, especially Neon gas and Helium gas, and its solution technology to support semiconductor industry will be discussed.

  18. Analysis of the specific consumption of energy and of carbon specific emissions of the mexican Iron and steel industry; Analisis del consumo especifico de energia y de las emisiones especificas de carbono de la industria siderurgica mexicana

    Energy Technology Data Exchange (ETDEWEB)

    Ozawa, L; Sheinbaum, C [Instituto de Ingenieria de la UNAM, Mexico, D. F. (Mexico)

    1999-07-01

    From 1970 to 1995, the specific consumption of energy of the Mexican iron and steel industry diminished in 16.2%, and the specific carbon emissions in 21.8%. In order to analyze the factors that favored these diminutions, the specific energy consumption in structural changes and improvements in energy efficiency were segregated; whereas the specific carbon emissions were segregated in structural changes, improvements of energy efficiency, changes in the factors of carbon emissions and in the fuel mixture in the iron and steel industry as well as in the electricity generation. It was observed that the diminution in the specific consumption as well as in the specific carbon emissions were mainly due to technological improvements in the manufacture of the steel: the complete substitution of the open hearth furnaces and a comprehensive penetration of the continuous casting. In spite of these improvements in energy efficiency and to the gradual substitution of coke by natural gas when increasing the production of iron by direct reduction. Though, the emission factor of the electricity was increased due to a greater participation of the fossil plants in 1995 in comparison with 1970. The indicators of energy efficiency of this industry with other countries were compared taking into account their own structure. Finally recommendations are made of measures for energy saving. [Spanish] De 1970 a 1995, el consumo especifico de energia de la industria siderurgica mexicana disminuyo en un 16.2%, y las emisiones especificas de carbono en un 21.8%. Para analizar los factores que favorecieron dichas disminuciones, se desagrego el consumo especifico de energia en cambios estructurales y en mejoras de eficiencia energetica; mientras que las emisiones especificas de carbono se desagregaron en cambios estructurales, mejoras de eficiencia energetica, cambios en los factores de emision de carbono y en la mezcla de combustibles tanto de la industria siderurgica como en la generacion de

  19. Hybrid organic semiconductor lasers for bio-molecular sensing.

    Science.gov (United States)

    Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

    2014-01-01

    Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

  20. Oxide Dispersion Strengthened Fe3Al-Based Alloy Tubes: Application Specific Development for the Power Generation Industry

    Energy Technology Data Exchange (ETDEWEB)

    Kad, B.K.

    2002-02-08

    A detailed and comprehensive research and development methodology is being prescribed to produce Oxide Dispersion Strengthened (ODS)-Fe{sub 3}Al thin walled tubes, using powder extrusion methodologies, for eventual use at operating temperatures of up to 1100% in the power generation industry. A particular ''in service application'' anomaly of Fe{sub 3}Al-based alloys is that the environmental resistance is maintained up to 1200 C, well beyond where such alloys retain sufficient mechanical strength. Grain boundary creep processes at such high temperatures are anticipated to be the dominant failure mechanism. Thus, the challenges of this program are manifold: (1) to produce thin walled ODS-Fe{sub 3}Al tubes, employing powder extrusion methodologies, with (2) adequate increased strength for service at operating temperatures, and (3) to mitigate creep failures by enhancing the as-processed grain size in ODS-Fe{sub 3}Al tubes. Our research progress till date has resulted in the successful batch production of typically 8 Ft. lengths of 1-3/8 inch diameter, 1/8 inch wall thickness, ODS-Fe{sub 3}Al tubes via a proprietary single step extrusion consolidation process. The process parameters for such consolidation methodologies have been prescribed and evaluated as being routinely reproducible. Such processing parameters (i.e., extrusion ratios, temperature, can design etc.) were particularly guided by the need to effect post-extrusion recrystallization and grain growth at a sufficiently low temperature, while still meeting the creep requirement at service temperatures. Static recrystallization studies show that elongated grains (with their long axis parallel to the extrusion axis), typically 200-2000 {micro}m in diameter, and several millimeters long can be obtained routinely, at 1200 C. The growth kinetics are affected by the interstitial impurity content in the powder batches. For example complete recrystallization, across the tube wall thickness, is

  1. OPENING ADDRESS: Heterostructures in Semiconductors

    Science.gov (United States)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  2. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  3. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  4. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  5. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  6. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  7. Semiconductor Laser Wind Lidar for Turbine Control

    DEFF Research Database (Denmark)

    Hu, Qi

    This thesis describes an experimentally oriented study of continuous wave (CW) coherent Doppler lidar system design. The main application is remote wind sensing for active wind turbine control using nacelle mounted lidar systems; and the primary focus is to devise an industrial instrument that can...... historical overview within the topic of wind lidar systems. Both the potential and the challenges of an industrialized wind lidar has been addressed here. Furthermore, the basic concept behind the heterodyne detection and a brief overview of the lidar signal processing is explained; and a simple...... investigation of the telescope truncation and lens aberrations is conducted, both numerically and experimentally. It is shown that these parameters dictate the spatial resolution of the lidar system, and have profound impact on the SNR. In this work, an all-semiconductor light source is used in the lidar design...

  8. Amorphous semiconductors for particle detection: Physical and technical limits and possibilities

    International Nuclear Information System (INIS)

    Equer, B.; Karar, A.

    1989-01-01

    Amorphous silicon is used, at an industrial level, in at least three different fields of application: photovoltaic cells, flat TV screens and line scanners for image processing. In the last two cases, thin film transistors (TFT) are produced with the same technology. Particle detection with amorphous silicon has been demonstrated, but present performances are limited to ionizing particles. In this paper, we discuss the physical basis of amorphous semiconductors and the possible future development that can be expected on the basis of the existing technology. It is concluded that substitution of amorphous for crystalline silicon brings no clear advantage, if possible at all. Positive assets are to be found in using specific properties of thin layers: large area structures like arrays of photodiodes with associated readout are in the state of the art; vertical structures alternating layers of differently doped materials and/or of different semiconductors can be produced by the same technique. The development of large area pixel detectors is technically feasible but requires a very large effort. A joint development effort with industries involved in X-ray detection and 2D photodetectors might be the most appropriate solution. (orig.)

  9. Controlled fabrication of semiconductor-metal hybrid nano-heterostructures via site-selective metal photodeposition

    Science.gov (United States)

    Vela Becerra, Javier; Ruberu, T. Purnima A.

    2017-12-05

    A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.

  10. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  11. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  12. FY 1999 achievement report on the project on the R and D of university-cooperation industrial science technology. Semiconductor device production process by Cat-CVD method (Semiconductor device production process by Cat-CVD method); 1999 nendo Cat-CVD ho ni yoru handotai device seizo process seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The paper described the results obtained by FY 1999 of the semiconductor device production using the catalytic chemical vapor deposition method. As to the thermal fluid simulation modeling in the thermal insulation thin film formation process, elucidated were the decomposition rate (40%) of SiH{sub 4} gas on catalyst body and the gas use efficiency (60% in two collisions with catalyst body). The range where the gas flow has effects was made clear. In researches on the substrate temperature control and catalyst body structure, thermal radiation effects from catalyst body were evaluated, which led to a success in high-speed deposition of high-quality a-Si. Concerning the optical monitor technology in film deposition, the identification of decomposition species (Si, etc.) and temperature of decomposition species could be made clear. Effects of pollutant removal were also monitored. Relating to the basic technology for thermal insulation thin film formation, conditions for Si nitride film formation were made clear, and stoichiometric composition films of Si{sub 3}N{sub 4} were acquired at low temperature of 300 degrees C. Also acquired were high etching resistant/high wetting resistant films. As to the ultra-high purity thin film formation, it was successful to find out the metal pollution resource and remove it. In regard to the Cat-CVD application on to metal oxide ferroelectric substances, low temperature Si{sub 3}N{sub 4} films could be formed at deposition speed of 20nm/min. by making the temperature condition (200 degrees C or less) clear and controlling the substrate temperature. (NEDO)

  13. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  14. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  15. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  16. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  17. Synchrotron radiation studies of inorganic-organic semiconductor interfaces

    International Nuclear Information System (INIS)

    Evans, D.A.; Steiner, H.J.; Vearey-Roberts, A.R.; Bushell, A.; Cabailh, G.; O'Brien, S.; Wells, J.W.; McGovern, I.T.; Dhanak, V.R.; Kampen, T.U.; Zahn, D.R.T.; Batchelor, D.

    2003-01-01

    Organic semiconductors (polymers and small molecules) are widely used in electronic and optoelectronic technologies. Many devices are based on multilayer structures where interfaces play a central role in device performance and where inorganic semiconductor models are inadequate. Synchrotron radiation techniques such as photoelectron spectroscopy (PES), near-edge X-ray absorption fine structure (NEXAFS) and X-ray standing wave spectroscopy (XSW) provide a powerful means of probing the structural, electronic and chemical properties of these interfaces. The surface-specificity of these techniques allows key properties to be monitored as the heterostructure is fabricated. This methodology has been directed at the growth of hybrid organic-inorganic semiconductor interfaces involving copper phthalocyanine as the model organic material and InSb and GaAs as the model inorganic semiconductor substrates. Core level PES has revealed that these interfaces are abrupt and chemically inert due to the weak bonding between the molecules and the inorganic semiconductor. NEXAFS studies have shown that there is a preferred orientation of the molecules within the organic semiconductor layers. The valence band offsets for the heterojunctions have been directly measured using valence level PES and were found to be very different for copper phthalocyanine on InSb and GaAs (0.7 and -0.3 eV respectively) although an interface dipole is present in both cases

  18. Semiconductors: Still a Wide Open Frontier for Scientists/Engineers

    Science.gov (United States)

    Seiler, David G.

    1997-10-01

    A 1995 Business Week article described several features of the explosive use of semiconductor chips today: ``Booming'' personal computer markets are driving high demand for microprocessors and memory chips; (2) New information superhighway markets will `ignite' sales of multimedia and communication chips; and (3) Demand for digital-signal-processing and data-compression chips, which speed up video and graphics, is `red hot.' A Washington Post article by Stan Hinden said that technology is creating an unstoppable demand for electronic elements. This ``digital pervasiveness'' means that a semiconductor chip is going into almost every high-tech product that people buy - cars, televisions, video recorders, telephones, radios, alarm clocks, coffee pots, etc. ``Semiconductors are everywhere.'' Silicon and compound semiconductors are absolutely essential and are pervasive enablers for DoD operations and systems. DoD's Critical Technologies Plan of 1991 says that ``Semiconductor materials and microelectronics are critically important and appropriately lead the list of critical defense technologies.'' These trends continue unabated. This talk describes some of the frontiers of semiconductors today and shows how scientists and engineers can effectively contribute to its advancement. Cooperative, multidisciplinary efforts are increasing. Specific examples will be given for scanning capacitance microscopy and thin-film metrology.

  19. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  20. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  1. High precision stress measurements in semiconductor structures by Raman microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Uhlig, Benjamin

    2009-07-01

    Stress in silicon structures plays an essential role in modern semiconductor technology. This stress has to be measured and due to the ongoing miniaturization in today's semiconductor industry, the measuring method has to meet certain requirements. The present thesis deals with the question how Raman spectroscopy can be used to measure the state of stress in semiconductor structures. In the first chapter the relation between Raman peakshift and stress in the material is explained. It is shown that detailed stress maps with a spatial resolution close to the diffraction limit can be obtained in structured semiconductor samples. Furthermore a novel procedure, the so called Stokes-AntiStokes-Difference method is introduced. With this method, topography, tool or drift effects can be distinguished from stress related influences in the sample. In the next chapter Tip-enhanced Raman Scattering (TERS) and its application for an improvement in lateral resolution is discussed. For this, a study is presented, which shows the influence of metal particles on the intensity and localization of the Raman signal. A method to attach metal particles to scannable tips is successfully applied. First TERS scans are shown and their impact on and challenges for high resolution stress measurements on semiconductor structures is explained. (orig.)

  2. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  3. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  4. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  5. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  6. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  7. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  8. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  9. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  10. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  11. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  12. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  13. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  14. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  15. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  16. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  17. Monte-Carlo simulation of crystallographical pore growth in III-V-semiconductors

    International Nuclear Information System (INIS)

    Leisner, Malte; Carstensen, Juergen; Foell, Helmut

    2011-01-01

    The growth of crystallographical pores in III-V-semiconductors can be understood in the framework of a simple model, which is based on the assumption that the branching of pores is proportional to the current density at the pore tips. The stochastic nature of this model allows its implementation into a three-dimensional Monte-Carlo-simulation of pore growth. The simulation is able to reproduce the experimentally observed crysto pore structures in III-V-semiconductors in full quantitative detail. The different branching probabilities for different semiconductors, as well as doping levels, can be deduced from the specific passivation behavior of the semiconductor-electrolyte-interface at the pore tips.

  18. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  19. Cause-specific sickness absence trends by occupational class and industrial sector in the context of recent labour market changes: a Finnish panel data study

    Science.gov (United States)

    Leinonen, Taina; Viikari-Juntura, Eira; Husgafvel-Pursiainen, Kirsti; Solovieva, Svetlana

    2018-01-01

    Objectives We aimed to provide previously unestablished information on population-based differences in cause-specific sickness absence trends between occupational classes and further between four large industrial sectors within the different occupational classes while controlling for other socioeconomic factors and employment patterns. We focused on the period 2005–2013, during which the labour market underwent large economic and structural changes in many countries. Design Register-based panel data study. Setting Large representative datasets on Finnish wage earners aged 25–59 years. Outcome measure Annual risk of sickness absence (>10 working days) based on repeated logistic regression. Results Between 2005 and 2013, the proportion of employees with sickness absence decreased. Occupational class differences in sickness absence trends varied by disease group. Overall, the decrease in absences was smallest among lower non-manual employees. Sickness absence levels were highest in the health and social work sector and in the manufacturing sector within the non-manual and manual classes, respectively. Absences due to musculoskeletal diseases decreased temporarily during the peak of the economic recession in 2009, particularly in the manufacturing sector within the manual class. The decrease in absences due to musculoskeletal diseases was smallest in the trade sector within the lower occupational classes. Overall, education, income and employment patterns partly explained the differences in the absence levels, but not in the trends. Conclusions We found a complex interplay between the associations of occupational class and industrial sector with sickness absence trends. During the economic recession, absences due to musculoskeletal diseases decreased temporarily in a segment of wage earners who were known to have been hit hard by the recession. However, the trend differences were not explained by the measured structural changes in the characteristics of the study

  20. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  1. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  2. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  3. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  4. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  5. Plastics piping systems for industrial applications – Acrylonitrile-butadiene-styrene (ABS), unplasticized poly(vinyl chloride) (PVC-U) and chlorinated poly(vinyl chloride) (PVC-C) – Specifications for components and the system – Metric series

    CERN Document Server

    Deutsches Institut für Normung. Berlin

    2003-01-01

    Plastics piping systems for industrial applications – Acrylonitrile-butadiene-styrene (ABS), unplasticized poly(vinyl chloride) (PVC-U) and chlorinated poly(vinyl chloride) (PVC-C) – Specifications for components and the system – Metric series

  6. Plastics piping systems for industrial applications : acrylonitrile-butadiene- styrene (ABS), unplasticized poly(vinyl chloride) (PVC-U) and chlorinated poly(vinyl chloride) (PVC-C) : specifications for components and the system : metric series

    CERN Document Server

    International Organization for Standardization. Geneva

    2003-01-01

    Plastics piping systems for industrial applications : acrylonitrile-butadiene- styrene (ABS), unplasticized poly(vinyl chloride) (PVC-U) and chlorinated poly(vinyl chloride) (PVC-C) : specifications for components and the system : metric series

  7. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    CERN Document Server

    Li, Simon

    2012-01-01

    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

  8. European Union regulators and industry agree on improving specific environmental release categories: Report from the exchange network for exposure scenarios specific environmental release category workshop on May 13, 2016.

    Science.gov (United States)

    Ahrens, Andreas; Moilanen, Marianne; Martin, Sara; Garcia-John, Enrique; Sättler, Daniel; Bakker, Joost; Reihlen, Antonia; Wind, Thorsten; Tolls, Johannes

    2017-09-01

    Specific environmental release categories (SPERCs) are an instrument for lower-tier environmental emissions assessments. They support chemical safety assessments under the European Union (EU) regulation Registration, Evaluation, Authorisation, and Restriction of Chemicals. SPERCs have been developed by industry and subjected to regulatory review. Within the framework of the Chemical Safety Report/Exposure Scenario Roadmap, the EU Chemicals Agency (ECHA), the EU Member State authorities, and European industry sector associations collaborate to improve the quality of the SPERCs. Following up on the outcome of ECHA's SPERC Best Practice Project, industry, together with ECHA, developed an updated SPERC factsheet template and guidance on how to fill it out. In addition, industry developed 2 sets of SPERC factsheet examples and the corresponding SPERC background documents. These documents were submitted to a multistakeholder review process. The comments from the review were discussed at a workshop in spring 2016. The workshop participants acknowledged the revised factsheet format including the corresponding guidance, the 2 SPERC factsheets, and the 2 SPERC background documents as best practice examples. The package is expected to support further improvement of the quality of the SPERCs. A common understanding was achieved of the need to match the level of detail of the use conditions description with the risk to be controlled (i.e., the emission intensity and hazard profile of the substances) and with the level of conservatism of SPERC release factors. The complete and transparent documentation of the derivation of the release factors and of their conservatism is conceived as crucial for the credibility of the SPERCs, such that they can be trusted by partners in the chemicals supply chain and by regulators. To that end, background documents will include a dedicated section describing the conservatism of SPERCs. The workshop concluded with an outline of the practical way

  9. The Extreme-Technology Industry

    Science.gov (United States)

    Hoefflinger, Bernd

    The persistent annual R&D quota of >15% of revenue in the semiconductor industry has been and continues to be more than twice as high as the OECD definition for High-Technology Industry. At the frontiers of miniaturization, the Cost-of-Ownership (COO) continues to rise upwards to beyond 10 billion for a Gigafactory. Only leaders in the world market for selected processors and memories or for foundry services can afford this. Others can succeed with high-value custom products equipped with high-performance application-specific standard products acquired from the leaders in their specific fields or as fabless original-device manufacturers buying wafers from top foundries and packaging/testing from contract manufacturers, thus eliminating the fixed cost for a factory. An overview is offered on the leaders in these different business models. In view of the coming highly diversified and heterogeneous world of nanoelectronic-systems competence, the point is made for global networks of manufacturing and services with the highest standards for product quality and liability.

  10. Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

    Science.gov (United States)

    Narang, Prineha

    This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the

  11. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  12. Introductory quantum mechanics for semiconductor nanotechnology

    International Nuclear Information System (INIS)

    Kim, Dae Mann

    2010-01-01

    The result of the nano education project run by the Korean Nano Technology Initiative, this has been recommended for use as official textbook by the Korean Nanotechnology Research Society. The author is highly experienced in teaching both physics and engineering in academia and industry, and naturally adopts an interdisciplinary approach here. He is short on formulations but long on applications, allowing students to understand the essential workings of quantum mechanics without spending too much time covering the wide realms of physics. He takes care to provide sufficient technical background and motivation for students to pursue further studies of advanced quantum mechanics and stresses the importance of translating quantum insights into useful and tangible innovations and inventions. As such, this is the only work to cover semiconductor nanotechnology from the perspective of introductory quantum mechanics, with applications including mainstream semiconductor technologies as well as (nano)devices, ranging from photodetectors, laser diodes, and solar cells to transistors and Schottky contacts. Problems are also provided to test the reader's understanding and supplementary material available includes working presentation files, solutions and instructors manuals. (orig.)

  13. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  14. Design development scopes towards occupational wellness of women workers: specific reference to local agro based food processing industries in NE India.

    Science.gov (United States)

    Bhattacharyya, Nandita; Chakrabarti, Debkumar

    2012-01-01

    Women workers constitute one of the most vulnerable segments of the country's labour force. They often face different workplace health challenges than men do. They are engaged in a range of work that extends from heavy, monotonous, repetitive jobs, which are in many times experienced with low-paid and involves in long hours of work. Women's workplace health problems are frequently compounded by getting more of the same at home--the "double jeopardy" of domestic work. Specific issues to improve the workers motivation leading to enhancement of productivity and improving occupational health and safety were addressed. Context specific application of ergonomics principles were studied in the process of designing of work related equipment of local fruit processing units, as well as in tea industry, covering 180 subjects selected purposively. Ergonomic risk factors prevailed among the workers associates productivity and relevant health issues were quantified using QEC, RULA. NMQ was used to gather data on prevalence of CTDs among the workers. Pineapple peeling, tea leaves plucking were found highly labour intensive, done manually. Postures scores found were very high. WRMSDs were prevalent among the workers. Scope for ergonomic design intervention was observed to improve productivity and occupational health.

  15. Industrial Waste

    DEFF Research Database (Denmark)

    Christensen, Thomas Højlund

    2011-01-01

    generation rates and material composition as well as determining factors are discussed in this chapter. Characterizing industrial waste is faced with the problem that often only a part of the waste is handled in the municipal waste system, where information is easily accessible. In addition part...... of the industrial waste may in periods, depending on market opportunities and prices, be traded as secondary rawmaterials. Production-specificwaste from primary production, for example steel slag, is not included in the current presentation. In some countries industries must be approved or licensed and as part...... of the system industry has to inform at the planning stage and afterwards in yearly reports on their waste arising and how the waste is managed. If available such information is very helpful in obtaining information about that specific industry. However, in many countries there is very little information...

  16. Production planning and control for semiconductor wafer fabrication facilities modeling, analysis, and systems

    CERN Document Server

    Mönch, Lars; Mason, Scott J

    2012-01-01

    Over the last fifty-plus years, the increased complexity and speed of integrated circuits have radically changed our world. Today, semiconductor manufacturing is perhaps the most important segment of the global manufacturing sector. As the semiconductor industry has become more competitive, improving planning and control has become a key factor for business success. This book is devoted to production planning and control problems in semiconductor wafer fabrication facilities. It is the first book that takes a comprehensive look at the role of modeling, analysis, and related information systems

  17. Use of semiconductor detectors for radioactive waste account and control

    CERN Document Server

    Davydov, L N; Zakharchenko, A A

    2002-01-01

    The possibilities and development status of the contemporary semiconductor detectors and detecting devices intended for radiation monitoring at nuclear industry enterprises, including Chernobyl Shelter and depositories of nuclear wastes are shown. Such devices,created in the last years, can be successfully used for measurements of the gamma-radiation dose rate as well as for the isotope composition evaluation of nuclear materials and wastes, both during the work cycles and in emergency situations.

  18. Synthesis and characterization of a new organic semiconductor material

    Energy Technology Data Exchange (ETDEWEB)

    Tiffour, Imane [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); Dehbi, Abdelkader [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Mourad, Abdel-Hamid I., E-mail: ahmourad@uaeu.ac.ae [Mechanical Engineering Department, Faculty of Engineering, United Arab Emirates University, Al-Ain, P.O. Box 15551 (United Arab Emirates); Belfedal, Abdelkader [Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); LPCMME, Département de Physique, Université d' Oran Es-sénia, 3100 Oran (Algeria)

    2016-08-01

    The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε{sub r}, the activation energy E{sub a}, the optical transmittance T and the gap energy E{sub g} have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10{sup −5} S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10{sup −4} S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ{sub max}) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

  19. Synthesis and characterization of a new organic semiconductor material

    International Nuclear Information System (INIS)

    Tiffour, Imane; Dehbi, Abdelkader; Mourad, Abdel-Hamid I.; Belfedal, Abdelkader

    2016-01-01

    The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε_r, the activation energy E_a, the optical transmittance T and the gap energy E_g have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10"−"5 S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10"−"4 S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ_m_a_x) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

  20. VVER-1000 SFAT-specification of an industrial prototype. Interim report on Task FIN A 1073 of the Finnish Support Programme to IAEA Safeguards

    Energy Technology Data Exchange (ETDEWEB)

    Tiitta, A. [VTT Chemical Technology, Espoo (Finland); Dvoyeglazov, A.M.; Iievlev, S.M. [State Scientific and Technical Centre for Nuclear and Radiation Safety, Kiev (Ukraine); Tarvainen, M.; Nikkinen, M. [Radiation and Nuclear Safety Authority, Helsinki (Finland)

    2000-05-01

    The project to develop a Spent Fuel Attribute Tester (SFAT) for Ukrainian VVER-1000 facilities is going on under the Task FIN A 1073 of the Finnish Support Programme to the IAEA safeguards. In the SFAT method the verification is based on an unambiguous detection of gamma radiation of the fission products. This is implemented by detecting the radiation emitted by a fuel assembly with a mobile gamma-spectroscopic instrument consisting of a collimator arrangement and a detector unit. The fuel assemblies stored in a wet storage are not moved during the verification measurement. The principal target is the radiation characteristic to {sup 137}Cs. For short cooled assemblies also {sup 144}Pr can be used as the target fission product nuclide. The generic IAEA SFAT concept has been adapted to the special conditions at the Ukrainian facilities. The requirements of the End User (IAEA), the State Nuclear Safety Authority (NRA) and the facilities have been taken into account and included in the specifications. Since the issuance of the first interim report, additional measurements were conducted at the Zaporozhye NPP to ensure the feasibility of the suggested measurement geometry and to test whether the SFAT device could be operated using the refuelling machine. A clear answer to the optimal measurement geometry and the detector choice was also obtained during this first phase of the task. Basing on the measurement results and the operational experience, the technical specifications for an industrial SFAT prototype are formulated. The technical specifications presented in this report and in the previous report have been approved by the Ukrainian State Authority and one of the facility operators, the Zaporozhye NPP. A procedure has been started for getting the approval of the other Ukrainian operators. (orig.)

  1. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  2. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  3. Cause-specific sickness absence trends by occupational class and industrial sector in the context of recent labour market changes: a Finnish panel data study.

    Science.gov (United States)

    Leinonen, Taina; Viikari-Juntura, Eira; Husgafvel-Pursiainen, Kirsti; Solovieva, Svetlana

    2018-04-07

    We aimed to provide previously unestablished information on population-based differences in cause-specific sickness absence trends between occupational classes and further between four large industrial sectors within the different occupational classes while controlling for other socioeconomic factors and employment patterns. We focused on the period 2005-2013, during which the labour market underwent large economic and structural changes in many countries. Register-based panel data study. Large representative datasets on Finnish wage earners aged 25-59 years. Annual risk of sickness absence (>10 working days) based on repeated logistic regression. Between 2005 and 2013, the proportion of employees with sickness absence decreased. Occupational class differences in sickness absence trends varied by disease group. Overall, the decrease in absences was smallest among lower non-manual employees. Sickness absence levels were highest in the health and social work sector and in the manufacturing sector within the non-manual and manual classes, respectively. Absences due to musculoskeletal diseases decreased temporarily during the peak of the economic recession in 2009, particularly in the manufacturing sector within the manual class. The decrease in absences due to musculoskeletal diseases was smallest in the trade sector within the lower occupational classes. Overall, education, income and employment patterns partly explained the differences in the absence levels, but not in the trends. We found a complex interplay between the associations of occupational class and industrial sector with sickness absence trends. During the economic recession, absences due to musculoskeletal diseases decreased temporarily in a segment of wage earners who were known to have been hit hard by the recession. However, the trend differences were not explained by the measured structural changes in the characteristics of the study population. Both occupational class and industrial sector should

  4. Measurement of ionising radiation semiconductor detectors: a review

    International Nuclear Information System (INIS)

    Aussel, J.P.

    1986-06-01

    Manufacturing techniques for nuclear detectors using semiconductors are constantly advancing, and a large range of models with different specificities and characteristics are available. After a theoretical reminder, this report describes the main types of detectors, their working and their preferential use. A comparative table guides the neophyte reader in his choice [fr

  5. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  6. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  7. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  8. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  9. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  10. Status and progress in ion implantation technology for semiconductor device manufacturing

    International Nuclear Information System (INIS)

    Takahashi, Noriyuki

    1998-01-01

    Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

  11. Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser.

    Science.gov (United States)

    Link, S M; Maas, D J H C; Waldburger, D; Keller, U

    2017-06-16

    Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications. Copyright © 2017, American Association for the Advancement of Science.

  12. Transverse Seebeck and Peltier effect in tilted metal-semiconductor multilayer structures

    International Nuclear Information System (INIS)

    Reitmaier, Christina

    2012-01-01

    Whether in aerospace, automobile industry or in home appliances, thermoelectric effects find use in many areas of technology. This work deals with the investigation of a special form of these effects, the transversal Seebeck- and Peltier effect. Via modelling under variation of the sample parameters the cooling efficiencies, the attainable temperature differences and the Figures of merit are optimised and than suitable samples are produced according to these specifications. With these tilted metal semiconductor multilayer structures consisting of lead and bismuth telluride a transversal Peltier effect is observed. Moreover, the generation of electric power is examined via the transversal Seebeck effect. In tilted Pb-Bi2Te3 multilayers the efficiency is measured with the conversion by heat in electric power and is compared to model calculations. (orig.)

  13. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  14. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  15. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  16. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  17. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  18. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  19. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  20. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  1. Technical change in US industry: A cross-industry analysis

    Science.gov (United States)

    Nelson, R. R. (Editor)

    1981-01-01

    The nature of the public policies which have influenced the pace and pattern of technical progress in a number of American industries is studied with the view of assessing the broad effects of these policies. The industries studied are agriculture, pharmaceuticals, semiconductors, computers, civil aircraft, automobiles and residential construction. The policies considered include research and development funding as well as government procurement, education, information dissemination, patent protection, licensing, regulations, and anti-trust policies.

  2. Tuning polarity and improving charge transport in organic semiconductors

    Science.gov (United States)

    Oh, Joon Hak; Han, A.-Reum; Yu, Hojeong; Lee, Eun Kwang; Jang, Moon Jeong

    2013-09-01

    Although state-of-the-art ambipolar polymer semiconductors have been extensively reported in recent years, highperformance ambipolar polymers with tunable dominant polarity are still required to realize on-demand, target-specific, high-performance organic circuitry. Herein, dithienyl-diketopyrrolopyrrole (TDPP)-based polymer semiconductors with engineered side-chains have been synthesized, characterized and employed in ambipolar organic field-effect transistors, in order to achieve controllable and improved electrical properties. Thermally removable tert-butoxycarbonyl (t-BOC) groups and hybrid siloxane-solubilizing groups are introduced as the solubilizing groups, and they are found to enable the tunable dominant polarity and the enhanced ambipolar performance, respectively. Such outstanding performance based on our molecular design strategies makes these ambipolar polymer semiconductors highly promising for low-cost, large-area, and flexible electronics.

  3. Problems and progress in radiation physics of semiconductors

    International Nuclear Information System (INIS)

    Vinetskij, V.L.

    1982-01-01

    A survey of the current status of radiation physics of semiconductors comprises the analysis of some new problems and poses the statement of concern. The essential difference between the probability of interstitial-vacancy pair occurrence W(T) in elastic collisions and the generally accepted step distribution with a typical ''threshold'' energy Tsub(d) is indicated. The role of diffusion and reaction evolution of primary defects leading to specific properties of the cluster formation process is shown. Special features of defect formation in spatially inhomogeneous semiconductors, in particular for elastic stresses present, are described. Among most important advances in the radiation physics of semiconductors there are the discovery of non-activation motion of the ''extra'' atom in silicon, the observation of a low activation energy value for the vacancy diffusion, the understanding of subthreshold mechanism of defect formation and radiation-induced diffusion, the effects of laser annealing of defects and oriented crystallization

  4. Evaluation of efficiency of a semiconductor gamma camera

    CERN Document Server

    Otake, H; Takeuchi, Y

    2002-01-01

    We evaluation basic characteristics of a compact type semiconductor gamma camera (eZ-SCOPE AN) of Cadmium Zinc Telluride (CdZnTe). This new compact gamma camera has 256 semiconductors representing the same number of pixels. Each semiconductor is 2 mm square and is located in 16 lines and rows on the surface of the detector. The specific performance characteristics were evaluated in the study referring to National Electrical Manufactures Association (NEMA) standards; intrinsic energy resolution, intrinsic count rate performance, integral uniformity, system planar sensitivity, system spatial resolution, and noise to the neighboring pixels. The intrinsic energy resolution measured 5.7% as full width half maximum (FWHM). The intrinsic count rate performance ranging from 17 kcps to 1,285 kcps was evaluated, but the highest intrinsic count rate was not observed. Twenty percents count loss was recognized at 1,021 kcps. The integral uniformity was 1.3% with high sensitivity collimator. The system planar sensitivity w...

  5. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  6. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  7. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  8. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  9. Nuclear radiation detection by a variband semiconductor

    International Nuclear Information System (INIS)

    Volkov, A.S.

    1981-01-01

    Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

  10. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  11. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  12. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  13. III–V semiconductors

    CERN Document Server

    Freyhardt, H C

    1980-01-01

    Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, complete, and tested instructions for growing crystals will be published, particularly in the case of methods and procedures that promise to have general applicability. Responding to the ever-increasing need for crystal substances in research and industry, appropriate space will be devoted to methods of crystal characterization and analysis in the broadest sense, even though reproducible results may be expected only when structures, microstructures, and composition are really known. Relations among procedures, properties, and the morphology of crystals will also be treated with refer...

  14. Electronics Industry

    National Research Council Canada - National Science Library

    Bell, Robert; Carroll-Garrison, Martina; Donovan, Daniel; Fisher, John; Guemmer, Paul; Harms, Robert; Kelly, Timothy; Love, Mattie; McReynolds, James; Ward, Ralph

    2006-01-01

    .... Government action to preserve strategic access to semiconductor producers is clearly needed to ensure DoD electronic systems can be built without compromising sensitive technology, though every...

  15. Semiconductor nanostructures for infrared applications

    NARCIS (Netherlands)

    Zurauskiene, N.; Asmontas, S.; Dargys, A.; Kundrotas, J.; Janssen, G.; Goovaerts, E.; Marcinkevicius, S.; Koenraad, P.M.; Wolter, J.H.; Leon, R.

    2004-01-01

    We present the results of time-resolved photoluminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy investigations of semiconductor quantum dots and quantum wells. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission

  16. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  17. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  18. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  19. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  20. Radiation damage in semiconductor detectors

    International Nuclear Information System (INIS)

    Kraner, H.W.

    1981-12-01

    A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced

  1. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  2. Government Support, FDI Clustering and Semiconductor Sustainability in China: Case Studies of Shanghai, Suzhou and Wuxi in the Yangtze Delta

    Directory of Open Access Journals (Sweden)

    Tsu-Lung Chou

    2014-08-01

    Full Text Available With reference to the case studies of Shanghai, Suzhou, and Wuxi, in the Yangtze Delta, China, this paper demonstrates the local possibilities and various development paths for developing an indigenous semiconductor industry, using the government support within foreign direct investment (FDI-dominated clusters for the New Industrializing Countries (NICs. Two important policy lessons are identified. The first is that the government may attract FDI and develop high-tech clustering by using policy support, but it does not necessarily provide conducive and positive influences on the sustainable development of domestic semiconductors. The second lesson is that the sustainability of the domestic semiconductor industry in the FDI cluster may start from three connected elements: (1 a pragmatic goal of government support; (2 complementarities of the domestic semiconductors with international leading firms in the market, technology and equipment linkages; and (3 a sustainable capacity of technical learning to drive local developments.

  3. Industrial garnet

    Science.gov (United States)

    Olson, D.W.

    2013-01-01

    Garnet has been used as a gemstone since the Bronze Age. However, garnet’s angular fractures, relatively high hardness and specific gravity, chemical inertness and nontoxicity make it ideal for many industrial applications. It is also free of crystalline silica and can be recycled.

  4. Hydrogen-related effects in crystalline semiconductors

    International Nuclear Information System (INIS)

    Haller, E.E.

    1988-08-01

    Recent experimental and theoretical information regarding the states of hydrogen in crystalline semiconductors is reviewed. The abundance of results illustrates that hydrogen does not preferentially occupy a few specific lattice sites but that it binds to native defects and impurities, forming a large variety of neutral and electrically active complexes. The study of hydrogen passivated shallow acceptors and donors and of partially passivated multivalent acceptors has yielded information on the electronic and real space structure and on the chemical composition of these complexes. Infrared spectroscopy, ion channeling, hydrogen isotope substitution and electric field drift experiments have shown that both static trigonal complexes as well as centers with tunneling hydrogen exist. Total energy calculations indicate that the charge state of the hydrogen ion which leads to passivation dominates, i.e., H + in p-type and H/sup /minus// in n-type crystals. Recent theoretical calculations indicate that is unlikely for a large fraction of the atomic hydrogen to exist in its neutral state, a result which is consistent with the total absence of any Electron Paramagnetic Resonance (EPR) signal. An alternative explanation for this result is the formation of H 2 . Despite the numerous experimental and theoretical results on hydrogen-related effects in Ge and Si there remains a wealth of interesting physics to be explored, especially in compound and alloy semiconductors. 6 refs., 6 figs

  5. Semiconductor Quantum Dots with Photoresponsive Ligands.

    Science.gov (United States)

    Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

    2016-10-01

    Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

  6. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  7. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1992-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

  8. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1995-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

  9. Bacteria inside semiconductors as potential sensor elements: biochip progress.

    Science.gov (United States)

    Sah, Vasu R; Baier, Robert E

    2014-06-24

    It was discovered at the beginning of this Century that living bacteria-and specifically the extremophile Pseudomonas syzgii-could be captured inside growing crystals of pure water-corroding semiconductors-specifically germanium-and thereby initiated pursuit of truly functional "biochip-based" biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs) and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities' features at the time of first production of these potential biochips.

  10. Transmutation doping of semiconductors by charged particles (review)

    International Nuclear Information System (INIS)

    Kozlovskii, V.V.; Zakharenkov, L.F.; Shustrov, B.A.

    1992-01-01

    A review is given of the state of the art in one of the current topics in radiation doping of semiconductors, which is process of nuclear transmutation doping (NTD) charged particles. In contrast to the neutron and photonuclear transmutation doping, which have been dealt with in monographs and reviews, NTD caused by the action of charged particles is a subject growing very rapidly in the last 10-15 years, but still lacking systematic accounts. The review consists of three sections. The first section deals with the characteristics of nuclear reactions in semiconductors caused by the action of charged particles: the main stress is on the modeling of NTD processes in semiconductors under the action of charged particles. An analysis is made of the modeling intended to give the total numbers of donors and acceptor impurities introduced by the NTD process, to optimize the compensation coefficients, and to estimate the distributions of the dopants with depth in a semiconductor crystal. In the second section the state of the art of experimental investigations of NTD under the influence of charged particles is considered. In view of the specific objects that have been investigated experimntally, the second section is divided into three subsections: silicon, III-V compounds, other semiconductors and related materials (such as high-temperature superconductors, ferroelectric films, etc.). An analysis is made of the communications reporting experimental data on the total numbers of dopants which are introduced, concentration of the electrically active fraction of the impurity, profiles of the dopant distributions, and conditions for efficient annealing of radiation defects. The third section deals with the suitability of NTD by charged particles for the fabrication of semiconductor devices. 45 refs

  11. 2012 Mask Industry Survey

    Science.gov (United States)

    Malloy, Matt; Litt, Lloyd C.

    2012-11-01

    A survey supported by SEMATECH and administered by David Powell Consulting was sent to semiconductor industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. 2012 marks the 11th consecutive year for the mask industry survey. This year's survey and reporting structure are similar to those of the previous years with minor modifications based on feedback from past years and the need to collect additional data on key topics. Categories include general mask information, mask processing, data and write time, yield and yield loss, delivery times, and maintenance and returns. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. Results, initial observations, and key comparisons between the 2011 and 2012 survey responses are shown here, including multiple indications of a shift towards the manufacturing of higher end photomasks.

  12. PREFACE: 16th Nordic Semiconductor Meeting

    Science.gov (United States)

    Pétur Gíslason, Hafliði; Guðmundsson, Viðar

    1994-01-01

    Some 30 years ago an informal meeting of the few Nordic specialists in semiconductor physics marked the beginning of what has become a biannual meeting of some hundred physicists and physics students from all the Nordic countries. The 16th Nordic Semiconductor Meeting took place at Laugarvatn, Iceland, June 12-15,1994. As a regional meeting the Nordic Semiconductor meeting has three characteristic features all of which distinguish it from more traditional international meetings in the field. First, it has the purpose of promoting Nordic cooperation in the international field of semiconductor physics. Research in the fields of advanced science and technology in the Nordic countries is likely to benefit from joining national forces before participating in the increasing European integration. Second, there is an unusually large fraction of graduate students amongst the participants of the Nordic Semiconductor Meeting. In fact, attending this conference is traditionally a part of the graduate program in seniconductor physics and technology. The Nordic Semiconductor Meeting is often the first conference of international character that graduate students attend in order to present a paper of poster. Third, there is an interdisciplinary quality of the meeting which is normally not the case for meetings of this size. In particular, the number of professional scientists from industry is comparable to the number of their academic colleagues. This is important for both groups, but perhaps the graduate students benefit most from presenting their results to both groups. The 16th Nordic Semiconductor Meeting, the first one in this series held in Iceland, attracted 129 active participants. The scientific programme was divided in twelve oral sessions. A novelty of this meeting was the emphasis on more fundamental physics in one of the two parallel sessions but more applied topics in the other, although the distinction was sometimes a matter of predilection. A poster session

  13. Laser interferometric method for determining the carrier diffusion length in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Manukhov, V. V. [Saint Petersburg State University (Russian Federation); Fedortsov, A. B.; Ivanov, A. S., E-mail: ivaleks58@gmail.com [Saint Petersburg Mining University (Russian Federation)

    2015-09-15

    A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

  14. Academic Centers and/as Industrial Consortia: US Microelectronics Research 1976-2016

    NARCIS (Netherlands)

    Mody, Cyrus C.M.

    2017-01-01

    In the U.S., in the late 1970s and early 1980s, academic research centers that were tightly linked to the semiconductor industry began to proliferate – at exactly the same time as the first academic start-up companies in biotech, and slightly before the first U.S. industrial semiconductor research

  15. Chapter 2: Commercial and Industrial Lighting Evaluation Protocol. The Uniform Methods Project: Methods for Determining Energy Efficiency Savings for Specific Measures

    Energy Technology Data Exchange (ETDEWEB)

    Kurnik, Charles W [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Gowans, Dakers [Left Fork Energy, Harrison, NY (United States); Telarico, Chad [DNV GL, Mahwah, NJ (United States)

    2017-11-02

    The Commercial and Industrial Lighting Evaluation Protocol (the protocol) describes methods to account for gross energy savings resulting from the programmatic installation of efficient lighting equipment in large populations of commercial, industrial, and other nonresidential facilities. This protocol does not address savings resulting from changes in codes and standards, or from education and training activities. A separate Uniform Methods Project (UMP) protocol, Chapter 3: Commercial and Industrial Lighting Controls Evaluation Protocol, addresses methods for evaluating savings resulting from lighting control measures such as adding time clocks, tuning energy management system commands, and adding occupancy sensors.

  16. Transversal light forces in semiconductors

    CERN Document Server

    Lindberg, M

    2003-01-01

    The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

  17. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  18. Hypersonic modes in nanophononic semiconductors.

    Science.gov (United States)

    Hepplestone, S P; Srivastava, G P

    2008-09-05

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  19. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  20. Efficient Spin Injection into Semiconductor

    International Nuclear Information System (INIS)

    Nahid, M.A.I.

    2010-06-01

    Spintronic research has made tremendous progress nowadays for making future devices obtain extra advantages of low power, and faster and higher scalability compared to present electronic devices. A spintronic device is based on the transport of an electron's spin instead of charge. Efficient spin injection is one of the very important requirements for future spintronic devices. However, the effective spin injection is an exceedingly difficult task. In this paper, the importance of spin injection, basics of spin current and the essential requirements of spin injection are illustrated. The experimental technique of electrical spin injection into semiconductor is also discussed based on the experimental experience. The electrical spin injection can easily be implemented for spin injection into any semiconductor. (author)