WorldWideScience

Sample records for semiconductor element method

  1. Finite element method for simulation of the semiconductor devices

    International Nuclear Information System (INIS)

    Zikatanov, L.T.; Kaschiev, M.S.

    1991-01-01

    An iterative method for solving the system of nonlinear equations of the drift-diffusion representation for the simulation of the semiconductor devices is worked out. The Petrov-Galerkin method is taken for the discretization of these equations using the bilinear finite elements. It is shown that the numerical scheme is a monotonous one and there are no oscillations of the solutions in the region of p-n transition. The numerical calculations of the simulation of one semiconductor device are presented. 13 refs.; 3 figs

  2. Operating method of amorphous thin film semiconductor element

    Energy Technology Data Exchange (ETDEWEB)

    Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

    1988-05-31

    The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

  3. Measuring trace elements in semiconductors: methods and pitfalls

    Energy Technology Data Exchange (ETDEWEB)

    Lindstrom, R M

    1980-02-01

    Some of the principles which govern the analytic methods available for the detection and quantitative measurement of impurity concentrations in semiconductors are described. Ways of assuring the quality of analytical data are suggested. (SPH)

  4. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  5. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  6. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  7. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  8. Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method.

    Science.gov (United States)

    Yoshikawa, Masanobu; Kosaka, Kenichi; Seki, Hirohumi; Kimoto, Tsunenobu

    2016-07-01

    We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and found that compressive stress of approximately 20 MPa occurs under the source and gate electrodes and tensile stress of approximately 10 MPa occurs between the source and gate electrodes. The experimental result was in close agreement with the result obtained by calculation using the finite element method (FEM). A combination of Raman spectroscopy and FEM provides much data on the stresses in 4H-SiC MOSFET. © The Author(s) 2016.

  9. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  10. Method of manufacturing semiconductor devices

    International Nuclear Information System (INIS)

    Sun, Y.S.E.

    1980-01-01

    A method of improving the electrical characteristics of semiconductor devices such as SCR's, rectifiers and triacs during their manufacture is described. The system consists of electron irradiation at an energy in excess of 250 KeV and most preferably between 1.5 and 12 MeV, producing an irradiation dose of between 5.10 12 and 5.10 15 electrons per sq. cm., and at a temperature in excess of 100 0 C preferably between 150 and 375 0 C. (U.K.)

  11. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  12. TSOM method for semiconductor metrology

    Science.gov (United States)

    Attota, Ravikiran; Dixson, Ronald G.; Kramar, John A.; Potzick, James E.; Vladár, András E.; Bunday, Benjamin; Novak, Erik; Rudack, Andrew

    2011-03-01

    Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement sensitivity using conventional optical microscopes; measurement sensitivities are comparable to what is typical when using scatterometry, scanning electron microscopy (SEM), and atomic force microscopy (AFM). TSOM can be used in both reflection and transmission modes and is applicable to a variety of target materials and shapes. Nanometrology applications that have been demonstrated by experiments or simulations include defect analysis, inspection and process control; critical dimension, photomask, overlay, nanoparticle, thin film, and 3D interconnect metrologies; line-edge roughness measurements; and nanoscale movements of parts in MEMS/NEMS. Industries that could benefit include semiconductor, data storage, photonics, biotechnology, and nanomanufacturing. TSOM is relatively simple and inexpensive, has a high throughput, and provides nanoscale sensitivity for 3D measurements with potentially significant savings and yield improvements in manufacturing.

  13. Printable semiconductor structures and related methods of making and assembling

    Science.gov (United States)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

    2013-03-12

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  14. Rapid methods for multi-elemental X-ray fluorescence analysis using excitation isotope sources and Si(Li)-semiconductor detector

    International Nuclear Information System (INIS)

    Zhuravleva, E.L.

    1980-01-01

    Some rapid methods using an unique calibration curve have been developed for multi-elemental X-ray fluorescence analysis of thin and thick layers of various samples having low contents of heavy elements. The matrix absorption effect in thick samples is taken into account according to the scattered radiation.The similar method using a unique calibration curve for determination of low contents of trace elements in thin layers without account of matrix effect is proposed. The results on the intercomposition run soil-5 are in good agreement with the data obtained in different laboratories. The errors of the method are 10 %; in a case of peak superposition - 15 %

  15. Basic Finite Element Method

    International Nuclear Information System (INIS)

    Lee, Byeong Hae

    1992-02-01

    This book gives descriptions of basic finite element method, which includes basic finite element method and data, black box, writing of data, definition of VECTOR, definition of matrix, matrix and multiplication of matrix, addition of matrix, and unit matrix, conception of hardness matrix like spring power and displacement, governed equation of an elastic body, finite element method, Fortran method and programming such as composition of computer, order of programming and data card and Fortran card, finite element program and application of nonelastic problem.

  16. Cleavage mechanoluminescence in elemental and III-V semiconductors

    International Nuclear Information System (INIS)

    Chandra, B.P.; Patel, R.P.; Gour, Anubha S.; Chandra, V.K.; Gupta, R.K.

    2003-01-01

    The present paper reports the theory of mechanoluminescence (ML) produced during cleavage of elemental and III-V semiconductors. It seems that the formation of crack-induced localized states is responsible for the ML excitation produced during the cleavage of elemental and III-V semiconductors. According to this mechanism, as the atoms are drawn away from each other in an advancing crack tip, the decreasing wave function overlap across the crack may result in localized states which is associated with increasing electron energy. If the energy of these localized states approach that of the conduction band, transition to the conduction band via tunnelling would be possible, creating minority carriers, and consequently the electron-hole recombination may give rise to mechanoluminescence. When an elemental or III-V semiconductor is cleaved, initially the ML intensity increases with time, attains a peak value I m at the time t m corresponding to completion of the cleavage of the semiconductor, and then it decreases following power law decay. Expressions are derived for the ML intensity I m corresponding to the peak of the ML intensity versus time curve and for the total ML intensity I T . It is shown that both I m and I T should increase directly with the area of the newly created surfaces of the crystals. From the measurements of the ML intensity, the velocity of crack propagation in material can be determined by using the relation v=H/t m

  17. Ion implantation methods for semiconductor substrates

    International Nuclear Information System (INIS)

    Matsushita, T.; Mamine, T.; Hayashi, H.; Nishiyama, K.

    1980-01-01

    A method of ion implantation for controlling the life time of minority carriers in a semiconductor substrate and hence to reduce the temperature dependency of the life time, comprises implanting iron ions into an N type semiconductor substrate with a dosage of 10 10 to 10 15 ions cm -2 , and then heat-treating the implanted substrate at 850 0 to 1250 0 C. The method is applicable to the production of diodes, transistors, Si controlled rectifiers and gate controlled switching devices. (author)

  18. Method of doping organic semiconductors

    Science.gov (United States)

    Kloc, Christian Leo [Constance, DE; Ramirez, Arthur Penn [Summit, NJ; So, Woo-Young [New Providence, NJ

    2012-02-28

    A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.

  19. Method of manufacturing a semiconductor sensor device and semiconductor sensor device

    NARCIS (Netherlands)

    2009-01-01

    The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

  20. On the estimation of matrix elements for optical transitions in semiconductors

    International Nuclear Information System (INIS)

    Hassan, A.R.

    1992-09-01

    A semi-empirical method is used to calculate the numerical values of the interband momentum matrix elements of the allowed optical transitions in semiconductors. This method is based on the evaluation of the ratio of the two-photon and one-photon absorption coefficients and the compare the result with the corresponding experimental values in a number of semiconductors both for direct and indirect transition processes. The numerical values of the momentum matrix elements are compared with the convenient theoretical calculations available. The result is found to agree fairly well with the corresponding values computed using the k-vector · p-vector perturbation theory. (author). 19 refs, 2 figs, 2 tabs

  1. Coherent diffractive imaging methods for semiconductor manufacturing

    Science.gov (United States)

    Helfenstein, Patrick; Mochi, Iacopo; Rajeev, Rajendran; Fernandez, Sara; Ekinci, Yasin

    2017-12-01

    The paradigm shift of the semiconductor industry moving from deep ultraviolet to extreme ultraviolet lithography (EUVL) brought about new challenges in the fabrication of illumination and projection optics, which constitute one of the core sources of cost of ownership for many of the metrology tools needed in the lithography process. For this reason, lensless imaging techniques based on coherent diffractive imaging started to raise interest in the EUVL community. This paper presents an overview of currently on-going research endeavors that use a number of methods based on lensless imaging with coherent light.

  2. MATERIAL ELEMENT MODEL FOR EXTRINSIC SEMICONDUCTORS WITH DEFECTS OF DISLOCATION

    Directory of Open Access Journals (Sweden)

    Maria Paola Mazzeo

    2011-07-01

    Full Text Available In a previous paper we outlined a geometric model for the thermodynamic description of extrinsic semiconductors with defects of dislocation.Applying a geometrization technique, within the rationalextended irreversible thermodynamics with internal variables, the dynamical system for simple material elements of these media, the expressions of the entropy function and the entropy 1-form were obtained. In this contribution we deepen the study of this geometric model. We give a detailed description of the defective media under consideration and of the dislocation core tensor, we introduce the transformation induced by the process and, applying the closure conditions for the entropy 1-form, we derive the necessary conditions for the existence of the entropy function. These and other results are new in the paper.The derivation of the relevant entropy 1-form is the starting point to introduce an extended thermodynamical phase space.

  3. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Wang, Wenzhong (Inventor); Dresselhaus, Mildred (Inventor)

    2009-01-01

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  4. Using Finite Element Method

    Directory of Open Access Journals (Sweden)

    M.H.R. Ghoreishy

    2008-02-01

    Full Text Available This research work is devoted to the footprint analysis of a steel-belted radial tyre (185/65R14 under vertical static load using finite element method. Two models have been developed in which in the first model the tread patterns were replaced by simple ribs while the second model was consisted of details of the tread blocks. Linear elastic and hyper elastic (Arruda-Boyce material models were selected to describe the mechanical behavior of the reinforcing and rubbery parts, respectively. The above two finite element models of the tyre were analyzed under inflation pressure and vertical static loads. The second model (with detailed tread patterns was analyzed with and without friction effect between tread and contact surfaces. In every stage of the analysis, the results were compared with the experimental data to confirm the accuracy and applicability of the model. Results showed that neglecting the tread pattern design not only reduces the computational cost and effort but also the differences between computed deformations do not show significant changes. However, more complicated variables such as shape and area of the footprint zone and contact pressure are affected considerably by the finite element model selected for the tread blocks. In addition, inclusion of friction even in static state changes these variables significantly.

  5. Finite Element Methods and Their Applications

    CERN Document Server

    Chen, Zhangxin

    2005-01-01

    This book serves as a text for one- or two-semester courses for upper-level undergraduates and beginning graduate students and as a professional reference for people who want to solve partial differential equations (PDEs) using finite element methods. The author has attempted to introduce every concept in the simplest possible setting and maintain a level of treatment that is as rigorous as possible without being unnecessarily abstract. Quite a lot of attention is given to discontinuous finite elements, characteristic finite elements, and to the applications in fluid and solid mechanics including applications to porous media flow, and applications to semiconductor modeling. An extensive set of exercises and references in each chapter are provided.

  6. Bacteria inside semiconductors as potential sensor elements: biochip progress.

    Science.gov (United States)

    Sah, Vasu R; Baier, Robert E

    2014-06-24

    It was discovered at the beginning of this Century that living bacteria-and specifically the extremophile Pseudomonas syzgii-could be captured inside growing crystals of pure water-corroding semiconductors-specifically germanium-and thereby initiated pursuit of truly functional "biochip-based" biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs) and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities' features at the time of first production of these potential biochips.

  7. Experimental Methods for Implementing Graphene Contacts to Finite Bandgap Semiconductors

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob

    Present Ph.D. thesis describes my work on implanting graphene as electrical contact to finite bandgap semiconductors. Different transistor architectures, types of graphene and finite bandgap semiconductors have been employed. The device planned from the beginning of my Ph.D. fellowship...... contacts to semiconductor nanowires, more specifically, epitaxially grown InAs nanowires. First, we tried a top down method where CVD graphene was deposited on substrate supported InAs nanowires followed by selective graphene ashing to define graphene electrodes. While electrical contact between...

  8. Bacteria Inside Semiconductors as Potential Sensor Elements: Biochip Progress

    Directory of Open Access Journals (Sweden)

    Vasu R. Sah

    2014-06-01

    Full Text Available It was discovered at the beginning of this Century that living bacteria—and specifically the extremophile Pseudomonas syzgii—could be captured inside growing crystals of pure water-corroding semiconductors—specifically germanium—and thereby initiated pursuit of truly functional “biochip-based” biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities’ features at the time of first production of these potential biochips.

  9. Numerical methods for semiconductor heterostructures with band nonparabolicity

    International Nuclear Information System (INIS)

    Wang Weichung; Hwang Tsungmin; Lin Wenwei; Liu Jinnliang

    2003-01-01

    This article presents numerical methods for computing bound state energies and associated wave functions of three-dimensional semiconductor heterostructures with special interest in the numerical treatment of the effect of band nonparabolicity. A nonuniform finite difference method is presented to approximate a model of a cylindrical-shaped semiconductor quantum dot embedded in another semiconductor matrix. A matrix reduction method is then proposed to dramatically reduce huge eigenvalue systems to relatively very small subsystems. Moreover, the nonparabolic band structure results in a cubic type of nonlinear eigenvalue problems for which a cubic Jacobi-Davidson method with an explicit nonequivalence deflation method are proposed to compute all the desired eigenpairs. Numerical results are given to illustrate the spectrum of energy levels and the corresponding wave functions in rather detail

  10. III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

    International Nuclear Information System (INIS)

    Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

    1984-01-01

    Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

  11. High Tc Superconducting Magnet Excited by a Semiconductor Thermoelectric Element

    Science.gov (United States)

    Kuriyama, T.; Ono, M.; Tabe, S.; Oguchi, A.; Okamura, T.

    2006-04-01

    A high Tc superconducting (HTS) magnet excited by a thermal electromotive force of a thermoelectric element is studied. This HTS magnet has the advantages of compactness, lightweight and continuous excitation in comparison with conventional HTS magnets, because this HTS magnet does not need a large external power source. In this system, a heat input into the cryogenic environment is necessary to excite the thermoelectric element for constant operation. This heat generation, however, causes a rise in temperature of an HTS coil and reduces the system performance. In this paper, a newly designed magnet system which adopted a two-stage GM cryocooler was investigated. It enabled us to control the temperature of a thermoelectric element and that of an HTS coil independently. The temperature of the HTS coil could be kept at 10-20 K at the second stage of the GM cryocooler, while the thermoelectric element could be excited at higher temperature in the range of 50-70 K at the first stage, where the performance of the thermoelectric element was higher. The experimental results on this HTS magnet are shown and the possibility of the thermoelectric element as a main power source of the HTS magnets is discussed.

  12. Finite-element discretization of 3D energy-transport equations for semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gadau, Stephan

    2007-07-01

    In this thesis a mathematical model was derived that describes the charge and energy transport in semiconductor devices like transistors. Moreover, numerical simulations of these physical processes are performed. In order to accomplish this, methods of theoretical physics, functional analysis, numerical mathematics and computer programming are applied. After an introduction to the status quo of semiconductor device simulation methods and a brief review of historical facts up to now, the attention is shifted to the construction of a model, which serves as the basis of the subsequent derivations in the thesis. Thereby the starting point is an important equation of the theory of dilute gases. From this equation the model equations are derived and specified by means of a series expansion method. This is done in a multi-stage derivation process, which is mainly taken from a scientific paper and which does not constitute the focus of this thesis. In the following phase we specify the mathematical setting and make precise the model assumptions. Thereby we make use of methods of functional analysis. Since the equations we deal with are coupled, we are concerned with a nonstandard problem. In contrary, the theory of scalar elliptic equations is established meanwhile. Subsequently, we are preoccupied with the numerical discretization of the equations. A special finite-element method is used for the discretization. This special approach has to be done in order to make the numerical results appropriate for practical application. By a series of transformations from the discrete model we derive a system of algebraic equations that are eligible for numerical evaluation. Using self-made computer programs we solve the equations to get approximate solutions. These programs are based on new and specialized iteration procedures that are developed and thoroughly tested within the frame of this research work. Due to their importance and their novel status, they are explained and

  13. Programming the finite element method

    CERN Document Server

    Smith, I M; Margetts, L

    2013-01-01

    Many students, engineers, scientists and researchers have benefited from the practical, programming-oriented style of the previous editions of Programming the Finite Element Method, learning how to develop computer programs to solve specific engineering problems using the finite element method. This new fifth edition offers timely revisions that include programs and subroutine libraries fully updated to Fortran 2003, which are freely available online, and provides updated material on advances in parallel computing, thermal stress analysis, plasticity return algorithms, convection boundary c

  14. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    Science.gov (United States)

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  15. Method to induce a conductivity type in a semiconductor

    International Nuclear Information System (INIS)

    Aboaf, J.A.; Sedgwick, T.O.

    1977-01-01

    The invention deals with a method in which one can produce a region of a desired type of conductivity in a semiconductor as is required for, e.g., field effect transistors. A metal oxide layer combination consisting of several metal oxides is thus deposited on the semiconductor. This is carried out according to the invention in a non-oxidizing atmosphere at temperatures at which the metal oxides do not diffuse into the semiconductor. The sign and degree of the induced conductivity type is adjusted by dosed depositing of the individual metal oxides related to one another. The gaseous metal oxides due to heating, mixed with a non-oxidizing gas are added in compounds to the semiconductor heated to depositing temperature. These compounds decompose at the depositing temperature into the metal oxide and a gaseous residual component. The semiconductor consists of silicon, and nitrogen is used as carrier gas; when depositing aluminium oxide, gaseous aluminium isopropoxide is added; when depositing silicon dioxide, gaseous tetra-ethyl orthosilicate. (ORU) [de

  16. Supplymentary type semiconductor device and manufacturing method. Soho gata handotai sochi oyobi sono seizo hoho

    Energy Technology Data Exchange (ETDEWEB)

    Uno, Masaaki

    1990-01-08

    As a supplementary type semiconductor device has a complicated structure, it is extremely difficult to construct it in a three dimensional structure. This invention aims to reduce its occupying area by forming p-channel and n-channel transistors in a solid structure; moreover in an easy method of production. In other words, an opening is made in the element-forming region of a semiconductor substrate, forming a gate-insulation film on each of the p-type and n-type semiconductors which are exposed on the two facing surfaces; on it formed a gate electrode; p-type semiconductor surface is used as a channel domain; a drain region of n-channel transistor on one surface and a source region on another surface; the n-type semiconductor surface corresponding to the gate electrode is used as a channel region; a source region of the n-channel transistor is formed on the same surface and the drain region on the substrate surface. Occupied area is thus made less and the production gets easier. 20 figs.

  17. Fast-timing methods for semiconductor detectors

    International Nuclear Information System (INIS)

    Spieler, H.

    1982-03-01

    The basic parameters are discussed which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter

  18. Fast timing methods for semiconductor detectors. Revision

    International Nuclear Information System (INIS)

    Spieler, H.

    1984-10-01

    This tutorial paper discusses the basic parameters which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter

  19. Radionuclide methods in semiconductor technology. I

    International Nuclear Information System (INIS)

    Stverak, B.; Kopejtko, J.; Janu, M.

    1977-01-01

    The effects were studied of gold coating (by wetting, dropping and vacuum coating) the surface of silicon plates, the effect of wetting time and drying time on the homogeneity and amount of gold in the thus formed diffusion source. The tracer method was used with 198 Au in form of aqueous solutions of chloroauric acid. The solutions were deposited on the surface of the plate, then dried, the plate rinsed with distilled water and wetted in a KCN solution or in aqua regia. Some plates were then used in the process of thermal diffusion. The method of contact autoradiography was used for the determination of the homogeneity of gold, the amount of gold was determined radiometrically. The duration of wetting was 1, 2, 4, 16 and 32 minutes for two different concentrations of chloroauric acid, the duration of drying was 1, 2.5, 4 and 20 hours. It was ascertained that all gold in its reduced metallic form deposited on the surface could by rinsing in the KCN solution be quantitatively transferred into the solution. Rinsing in aqua regia gave the same results. In depositing gold in form of aqueous solutions of chloroauric acid it was ascertained that regardless of the concentration of gold in the wetting solution the amount of gold insoluble in water stabilized on the surface within approximately 5 minutes. The amount of reduced gold increased (owing to the continuing hydrolysis in the liquid phase) with the increasing drying time of the aqueous solution of chloroauric acid. Gold coating from the liquid phase be it by wetting or by dropping yielded a significantly nonhomogeneous surface layer of deposited gold provided the said solutions of chloroauric acid were used. Considerable differences were ascertained in the surface density of gold between places where the solution had dried and places where it had not remained. Homogeneity significantly improved after rinsing. Following thermal diffusion, 0.8-5% of the total gold content was diffused into the silicon plates. The

  20. Method of plasma etching Ga-based compound semiconductors

    Science.gov (United States)

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  1. Finite elements methods in mechanics

    CERN Document Server

    Eslami, M Reza

    2014-01-01

    This book covers all basic areas of mechanical engineering, such as fluid mechanics, heat conduction, beams, and elasticity with detailed derivations for the mass, stiffness, and force matrices. It is especially designed to give physical feeling to the reader for finite element approximation by the introduction of finite elements to the elevation of elastic membrane. A detailed treatment of computer methods with numerical examples are provided. In the fluid mechanics chapter, the conventional and vorticity transport formulations for viscous incompressible fluid flow with discussion on the method of solution are presented. The variational and Galerkin formulations of the heat conduction, beams, and elasticity problems are also discussed in detail. Three computer codes are provided to solve the elastic membrane problem. One of them solves the Poisson’s equation. The second computer program handles the two dimensional elasticity problems, and the third one presents the three dimensional transient heat conducti...

  2. Methods of forming semiconductor devices and devices formed using such methods

    Science.gov (United States)

    Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

    2013-05-21

    Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

  3. Peridynamic Multiscale Finite Element Methods

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Timothy [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Bond, Stephen D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Littlewood, David John [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Moore, Stan Gerald [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-12-01

    The problem of computing quantum-accurate design-scale solutions to mechanics problems is rich with applications and serves as the background to modern multiscale science research. The prob- lem can be broken into component problems comprised of communicating across adjacent scales, which when strung together create a pipeline for information to travel from quantum scales to design scales. Traditionally, this involves connections between a) quantum electronic structure calculations and molecular dynamics and between b) molecular dynamics and local partial differ- ential equation models at the design scale. The second step, b), is particularly challenging since the appropriate scales of molecular dynamic and local partial differential equation models do not overlap. The peridynamic model for continuum mechanics provides an advantage in this endeavor, as the basic equations of peridynamics are valid at a wide range of scales limiting from the classical partial differential equation models valid at the design scale to the scale of molecular dynamics. In this work we focus on the development of multiscale finite element methods for the peridynamic model, in an effort to create a mathematically consistent channel for microscale information to travel from the upper limits of the molecular dynamics scale to the design scale. In particular, we first develop a Nonlocal Multiscale Finite Element Method which solves the peridynamic model at multiple scales to include microscale information at the coarse-scale. We then consider a method that solves a fine-scale peridynamic model to build element-support basis functions for a coarse- scale local partial differential equation model, called the Mixed Locality Multiscale Finite Element Method. Given decades of research and development into finite element codes for the local partial differential equation models of continuum mechanics there is a strong desire to couple local and nonlocal models to leverage the speed and state of the

  4. Current measurement method for characterization of fast switching power semiconductors with Silicon Steel Current Transformer

    DEFF Research Database (Denmark)

    Li, Helong; Beczkowski, Szymon; Munk-Nielsen, Stig

    2015-01-01

    This paper proposes a novel current measurement method with Silicon Steel Current Transformer (SSCT) for the characterization of fast switching power semiconductors. First, the existing current sensors for characterization of fast switching power semiconductors are experimentally evaluated...

  5. Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography

    Energy Technology Data Exchange (ETDEWEB)

    Somodi, P.K.; Twitchett-Harrison, A.C.; Midgley, P.A. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Kardynał, B.E. [Peter Grünberg Institute 9, Forschungszentrum Jülich, D-52425 Jülich (Germany); Barnes, C.H.W. [Department of Physics, University of Cambridge, Madingley Road, Cambridge CB3 0HE (United Kingdom); Dunin-Borkowski, R.E., E-mail: rafaldb@gmail.com [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute 5, Forschungszentrum Jülich, D-52425 Jülich (Germany)

    2013-11-15

    Two-dimensional finite element simulations of electrostatic dopant potentials in parallel-sided semiconductor specimens that contain p–n junctions are used to assess the effect of the electrical state of the surface of a thin specimen on projected potentials measured using off-axis electron holography in the transmission electron microscope. For a specimen that is constrained to have an equipotential surface, the simulations show that the step in the projected potential across a p–n junction is always lower than would be predicted from the properties of the bulk device, but is relatively insensitive to the value of the surface state energy, especially for thicker specimens and higher dopant concentrations. The depletion width measured from the projected potential, however, has a complicated dependence on specimen thickness. The results of the simulations are of broader interest for understanding the influence of surfaces and interfaces on electrostatic potentials in nanoscale semiconductor devices. - Highlights: • Finite element simulations are performed to calculate electrostatic dopant potentials in TEM specimens that contain p–n junctions. • The effect of the electrical state of the specimen surface on the projected potential is assessed for equipotential specimen surfaces. • The step in projected potential is always found to be lower than the step in potential in the bulk device. • The step in projected potential is least sensitive to surface state energy for thicker specimens and higher dopant concentrations. • The depletion width measured from the projected potential has a complicated dependence on specimen thickness.

  6. Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography

    International Nuclear Information System (INIS)

    Somodi, P.K.; Twitchett-Harrison, A.C.; Midgley, P.A.; Kardynał, B.E.; Barnes, C.H.W.; Dunin-Borkowski, R.E.

    2013-01-01

    Two-dimensional finite element simulations of electrostatic dopant potentials in parallel-sided semiconductor specimens that contain p–n junctions are used to assess the effect of the electrical state of the surface of a thin specimen on projected potentials measured using off-axis electron holography in the transmission electron microscope. For a specimen that is constrained to have an equipotential surface, the simulations show that the step in the projected potential across a p–n junction is always lower than would be predicted from the properties of the bulk device, but is relatively insensitive to the value of the surface state energy, especially for thicker specimens and higher dopant concentrations. The depletion width measured from the projected potential, however, has a complicated dependence on specimen thickness. The results of the simulations are of broader interest for understanding the influence of surfaces and interfaces on electrostatic potentials in nanoscale semiconductor devices. - Highlights: • Finite element simulations are performed to calculate electrostatic dopant potentials in TEM specimens that contain p–n junctions. • The effect of the electrical state of the specimen surface on the projected potential is assessed for equipotential specimen surfaces. • The step in projected potential is always found to be lower than the step in potential in the bulk device. • The step in projected potential is least sensitive to surface state energy for thicker specimens and higher dopant concentrations. • The depletion width measured from the projected potential has a complicated dependence on specimen thickness

  7. High voltage semiconductor devices and methods of making the devices

    Energy Technology Data Exchange (ETDEWEB)

    Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

    2018-01-23

    A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

  8. Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors

    Science.gov (United States)

    Su, Ching-Hua (Inventor)

    2013-01-01

    The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

  9. Method for Providing Semiconductors Having Self-Aligned Ion Implant

    Science.gov (United States)

    Neudeck, Philip G. (Inventor)

    2014-01-01

    A method is disclosed that provides a self-aligned nitrogen-implant particularly suited for a Junction Field Effect Transistor (JFET) semiconductor device preferably comprised of a silicon carbide (SiC). This self-aligned nitrogen-implant allows for the realization of durable and stable electrical functionality of high temperature transistors such as JFETs. The method implements the self-aligned nitrogen-implant having predetermined dimensions, at a particular step in the fabrication process, so that the SiC junction field effect transistors are capable of being electrically operating continuously at 500.degree. C. for over 10,000 hours in an air ambient with less than a 10% change in operational transistor parameters.

  10. Method for depositing high-quality microcrystalline semiconductor materials

    Science.gov (United States)

    Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  11. Methods for enhancing P-type doping in III-V semiconductor films

    Science.gov (United States)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  12. Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography.

    Science.gov (United States)

    Somodi, P K; Twitchett-Harrison, A C; Midgley, P A; Kardynał, B E; Barnes, C H W; Dunin-Borkowski, R E

    2013-11-01

    Two-dimensional finite element simulations of electrostatic dopant potentials in parallel-sided semiconductor specimens that contain p-n junctions are used to assess the effect of the electrical state of the surface of a thin specimen on projected potentials measured using off-axis electron holography in the transmission electron microscope. For a specimen that is constrained to have an equipotential surface, the simulations show that the step in the projected potential across a p-n junction is always lower than would be predicted from the properties of the bulk device, but is relatively insensitive to the value of the surface state energy, especially for thicker specimens and higher dopant concentrations. The depletion width measured from the projected potential, however, has a complicated dependence on specimen thickness. The results of the simulations are of broader interest for understanding the influence of surfaces and interfaces on electrostatic potentials in nanoscale semiconductor devices. © 2013 Elsevier B.V. All rights reserved.

  13. Semiconductor device and method of manufacturing the same

    NARCIS (Netherlands)

    2009-01-01

    The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type,

  14. Discrete elements method of neutron transport

    International Nuclear Information System (INIS)

    Mathews, K.A.

    1988-01-01

    In this paper a new neutron transport method, called discrete elements (L N ) is derived and compared to discrete ordinates methods, theoretically and by numerical experimentation. The discrete elements method is based on discretizing the Boltzmann equation over a set of elements of angle. The discrete elements method is shown to be more cost-effective than discrete ordinates, in terms of accuracy versus execution time and storage, for the cases tested. In a two-dimensional test case, a vacuum duct in a shield, the L N method is more consistently convergent toward a Monte Carlo benchmark solution

  15. Automation of finite element methods

    CERN Document Server

    Korelc, Jože

    2016-01-01

    New finite elements are needed as well in research as in industry environments for the development of virtual prediction techniques. The design and implementation of novel finite elements for specific purposes is a tedious and time consuming task, especially for nonlinear formulations. The automation of this process can help to speed up this process considerably since the generation of the final computer code can be accelerated by order of several magnitudes. This book provides the reader with the required knowledge needed to employ modern automatic tools like AceGen within solid mechanics in a successful way. It covers the range from the theoretical background, algorithmic treatments to many different applications. The book is written for advanced students in the engineering field and for researchers in educational and industrial environments.

  16. Domain decomposition methods for mortar finite elements

    Energy Technology Data Exchange (ETDEWEB)

    Widlund, O.

    1996-12-31

    In the last few years, domain decomposition methods, previously developed and tested for standard finite element methods and elliptic problems, have been extended and modified to work for mortar and other nonconforming finite element methods. A survey will be given of work carried out jointly with Yves Achdou, Mario Casarin, Maksymilian Dryja and Yvon Maday. Results on the p- and h-p-version finite elements will also be discussed.

  17. Structural modeling techniques by finite element method

    International Nuclear Information System (INIS)

    Kang, Yeong Jin; Kim, Geung Hwan; Ju, Gwan Jeong

    1991-01-01

    This book includes introduction table of contents chapter 1 finite element idealization introduction summary of the finite element method equilibrium and compatibility in the finite element solution degrees of freedom symmetry and anti symmetry modeling guidelines local analysis example references chapter 2 static analysis structural geometry finite element models analysis procedure modeling guidelines references chapter 3 dynamic analysis models for dynamic analysis dynamic analysis procedures modeling guidelines and modeling guidelines.

  18. Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis

    Science.gov (United States)

    Raciti, R.; Bahariqushchi, R.; Summonte, C.; Aydinli, A.; Terrasi, A.; Mirabella, S.

    2017-06-01

    Determination of the optical bandgap (Eg) in semiconductor nanostructures is a key issue in understanding the extent of quantum confinement effects (QCE) on electronic properties and it usually involves some analytical approximation in experimental data reduction and modeling of the light absorption processes. Here, we compare some of the analytical procedures frequently used to evaluate the optical bandgap from reflectance (R) and transmittance (T) spectra. Ge quantum wells and quantum dots embedded in SiO2 were produced by plasma enhanced chemical vapor deposition, and light absorption was characterized by UV-Vis/NIR spectrophotometry. R&T elaboration to extract the absorption spectra was conducted by two approximated methods (single or double pass approximation, single pass analysis, and double pass analysis, respectively) followed by Eg evaluation through linear fit of Tauc or Cody plots. Direct fitting of R&T spectra through a Tauc-Lorentz oscillator model is used as comparison. Methods and data are discussed also in terms of the light absorption process in the presence of QCE. The reported data show that, despite the approximation, the DPA approach joined with Tauc plot gives reliable results, with clear advantages in terms of computational efforts and understanding of QCE.

  19. Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby

    Science.gov (United States)

    Devaney, Walter E.

    1987-08-04

    Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

  20. Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide-Semiconductor Image Sensors.

    Science.gov (United States)

    Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

    2017-05-02

    Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components.

  1. Method of lightening radiation darkened optical elements

    International Nuclear Information System (INIS)

    Reich, F.R.; Schwankoff, A.R.

    1980-01-01

    A method of lightening a radiation-darkened optical element in which visible optical energy or electromagnetic radiation having a wavelength in the range of from about 2000 to about 20,000 angstroms is directed into the radiation-darkened optical element; the method may be used to lighten radiation-darkened optical element in-situ during the use of the optical element to transmit data by electronically separating the optical energy from the optical output by frequency filtering, data cooling, or interlacing the optic energy between data intervals

  2. 3D analysis of semiconductor devices: A combination of 3D imaging and 3D elemental analysis

    Science.gov (United States)

    Fu, Bianzhu; Gribelyuk, Michael A.

    2018-04-01

    3D analysis of semiconductor devices using a combination of scanning transmission electron microscopy (STEM) Z-contrast tomography and energy dispersive spectroscopy (EDS) elemental tomography is presented. 3D STEM Z-contrast tomography is useful in revealing the depth information of the sample. However, it suffers from contrast problems between materials with similar atomic numbers. Examples of EDS elemental tomography are presented using an automated EDS tomography system with batch data processing, which greatly reduces the data collection and processing time. 3D EDS elemental tomography reveals more in-depth information about the defect origin in semiconductor failure analysis. The influence of detector shadowing and X-rays absorption on the EDS tomography's result is also discussed.

  3. Methods for synthesis of semiconductor nanocrystals and thermoelectric compositions

    Science.gov (United States)

    Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Dresselhaus, Mildred (Inventor); Ren, Zhifeng (Inventor); Wang, Wenzhong (Inventor)

    2007-01-01

    The present invention provides methods for synthesis of IV VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20.degree. C. to about 360.degree. C., for a duration sufficient for generating nanoparticles as binary alloys of the IV VI elements.

  4. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  5. Semiconductor relay and its manufacture method. Handotai relay oyobi sono seizo hoho

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, M

    1993-06-01

    The invention relates to a semiconductor relay in which a light emitting diode and a photovoltaic element are arranged in the opposite positions and connected with a light connection and aims to present a light transmission path to transmit input signals to the light emitting diode to the side of the photovoltaic element with a negligible light loss effectively. The invention presents a semiconductor relay, in which a light emitting diode loaded on the first lead frame and the light receiving part of the photovoltaic element to drive a MOSFET element loaded on the second lead frame and acting as a switch element are connected through an insulator tube with an opaque outer wall, and the interior of the insulator tube is filled with a transparent insulating filler, so that the invention affords a light transmission path without light leakage from the interior of the opaque insulator tube and with the stability in the form and no light loss. 3 figs.

  6. A modeling method of semiconductor fabrication flows with extended knowledge hybrid Petri nets

    Institute of Scientific and Technical Information of China (English)

    Zhou Binghai; Jiang Shuyu; Wang Shijin; Wu bin

    2008-01-01

    A modeling method of extended knowledge hybrid Petri nets (EKHPNs), incorporating object-oriented methods into hybrid Petri nets (HPNs), was presented and used for the representation and modeling of semiconductor wafer fabrication flows. To model the discrete and continuous parts of a complex semiconductor wafer fabrication flow, the HPNs were introduced into the EKHPNs. Object-oriented methods were combined into the EKHPNs for coping with the complexity of the fabrication flow. Knowledge annotations were introduced to solve input and output conflicts of the EKHPNs.Finally, to demonstrate the validity of the EKHPN method, a real semiconductor wafer fabrication case was used to illustrate the modeling procedure. The modeling results indicate that the proposed method can be used to model a complex semiconductor wafer fabrication flow expediently.

  7. Fuel elements handling device and method

    International Nuclear Information System (INIS)

    Jabsen, F.S.

    1976-01-01

    This invention relates to nuclear equipment and more particularly to methods and apparatus for the non-destructive inspection, manipulation, disassembly and assembly of reactor fuel elements and the like. (author)

  8. Advanced finite element method in structural engineering

    CERN Document Server

    Long, Yu-Qiu; Long, Zhi-Fei

    2009-01-01

    This book systematically introduces the research work on the Finite Element Method completed over the past 25 years. Original theoretical achievements and their applications in the fields of structural engineering and computational mechanics are discussed.

  9. Review on Finite Element Method * ERHUNMWUN, ID ...

    African Journals Online (AJOL)

    ADOWIE PERE

    ABSTRACT: In this work, we have discussed what Finite Element Method (FEM) is, its historical development, advantages and ... residual procedures, are examples of the direct approach ... The paper centred on the "stiffness and deflection of ...

  10. Classification of methods for measuring current-voltage characteristics of semiconductor devices

    Directory of Open Access Journals (Sweden)

    Iermolenko Ia. O.

    2014-06-01

    Full Text Available It is shown that computer systems for measuring current-voltage characteristics are very important for semiconductor devices production. The main criteria of efficiency of such systems are defined. It is shown that efficiency of such systems significantly depends on the methods for measuring current-voltage characteristics of semiconductor devices. The aim of this work is to analyze existing methods for measuring current-voltage characteristics of semiconductor devices and to create the classification of these methods in order to specify the most effective solutions in terms of defined criteria. To achieve this aim, the most common classifications of methods for measuring current-voltage characteristics of semiconductor devices and their main disadvantages are considered. Automated and manual, continuous, pulse, mixed, isothermal and isodynamic methods for measuring current-voltage characteristics are analyzed. As a result of the analysis and generalization of existing methods the next classification criteria are defined: the level of automation, the form of measurement signals, the condition of semiconductor device during the measurements, and the use of mathematical processing of the measurement results. With the use of these criteria the classification scheme of methods for measuring current-voltage characteristics of semiconductor devices is composed and the most effective methods are specified.

  11. The finite element method in electromagnetics

    CERN Document Server

    Jin, Jianming

    2014-01-01

    A new edition of the leading textbook on the finite element method, incorporating major advancements and further applications in the field of electromagnetics The finite element method (FEM) is a powerful simulation technique used to solve boundary-value problems in a variety of engineering circumstances. It has been widely used for analysis of electromagnetic fields in antennas, radar scattering, RF and microwave engineering, high-speed/high-frequency circuits, wireless communication, electromagnetic compatibility, photonics, remote sensing, biomedical engineering, and space exploration. The

  12. PIXE - a new method for elemental analysis

    International Nuclear Information System (INIS)

    Johansson, S.A.E.

    1983-01-01

    With elemental analysis we mean the determination of which chemical elements are present in a sample and of their concentration. This is an old and important problem in chemistry. The earliest methods were purely chemical and many such methods are still used. However, various methods based on physical principles have gradually become more and more important. One such method is neutron activation. When the sample is bombarded with neutrons it becomes radioactive and the various radioactive isotopes produced can be identified by the radiation they emit. From the measured intensity of the radiation one can calculate how much of a certain element that is present in the sample. Another possibility is to study the light emitted when the sample is excited in various ways. A spectroscopic investigation of the light can identify the chemical elements and allows also a determination of their concentration in the sample. In the same way, if a sample can be brought to emit X-rays, this radiation is also characteristic for the elements present and can be used to determine the elemental concentration. One such X-ray method which has been developed recently is PIXE. The name is an acronym for Particle Induced X-ray Emission and indicates the principle of the method. Particles in this context means heavy, charged particles such as protons and a-particles of rather high energy. Hence, in PIXE-analysis the sample is irradiated in the beam of an accelerator and the emitted X-rays are studied. (author)

  13. Recent advances in boundary element methods

    CERN Document Server

    Manolis, GD

    2009-01-01

    Addresses the needs of the computational mechanics research community in terms of information on boundary integral equation-based methods and techniques applied to a variety of fields. This book collects both original and review articles on contemporary Boundary Element Methods (BEM) as well as on the Mesh Reduction Methods (MRM).

  14. Introducing the Boundary Element Method with MATLAB

    Science.gov (United States)

    Ang, Keng-Cheng

    2008-01-01

    The boundary element method provides an excellent platform for learning and teaching a computational method for solving problems in physical and engineering science. However, it is often left out in many undergraduate courses as its implementation is deemed to be difficult. This is partly due to the perception that coding the method requires…

  15. Finite element method - theory and applications

    International Nuclear Information System (INIS)

    Baset, S.

    1992-01-01

    This paper summarizes the mathematical basis of the finite element method. Attention is drawn to the natural development of the method from an engineering analysis tool into a general numerical analysis tool. A particular application to the stress analysis of rubber materials is presented. Special advantages and issues associated with the method are mentioned. (author). 4 refs., 3 figs

  16. Laser interferometric method for determining the carrier diffusion length in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Manukhov, V. V. [Saint Petersburg State University (Russian Federation); Fedortsov, A. B.; Ivanov, A. S., E-mail: ivaleks58@gmail.com [Saint Petersburg Mining University (Russian Federation)

    2015-09-15

    A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

  17. Investigation of rare elements by electrochemical methods

    International Nuclear Information System (INIS)

    Zarinskij, V.A.

    1988-01-01

    The use of electrochemical methods for the study of complexing, separation of rare element mixtures, their preparation in lower oxidation states, and also for the development of highly sensitive methods of the element determination, is considered in the review. Voltammetric methods of Pt, Au, Re determination are considered, as well as Re preparation in oxidation states +5, +3 by electrolytic methods. The possibility to use electrodialysis methods for purification of insoluble compounds of rare earths (RE) from impurities, and for separation of Re and Mo with simultaneous purification of Re from K and other elements is shown. The application of high-frequency conductometry to analytic chemistry and to the study of Th, In, RE complexing and kinetics of the reactions is considered

  18. Discrete elements method of neutral particle transport

    International Nuclear Information System (INIS)

    Mathews, K.A.

    1983-01-01

    A new discrete elements (L/sub N/) transport method is derived and compared to the discrete ordinates S/sub N/ method, theoretically and by numerical experimentation. The discrete elements method is more accurate than discrete ordinates and strongly ameliorates ray effects for the practical problems studied. The discrete elements method is shown to be more cost effective, in terms of execution time with comparable storage to attain the same accuracy, for a one-dimensional test case using linear characteristic spatial quadrature. In a two-dimensional test case, a vacuum duct in a shield, L/sub N/ is more consistently convergent toward a Monte Carlo benchmark solution than S/sub N/, using step characteristic spatial quadrature. An analysis of the interaction of angular and spatial quadrature in xy-geometry indicates the desirability of using linear characteristic spatial quadrature with the L/sub N/ method

  19. Finite element methods a practical guide

    CERN Document Server

    Whiteley, Jonathan

    2017-01-01

    This book presents practical applications of the finite element method to general differential equations. The underlying strategy of deriving the finite element solution is introduced using linear ordinary differential equations, thus allowing the basic concepts of the finite element solution to be introduced without being obscured by the additional mathematical detail required when applying this technique to partial differential equations. The author generalizes the presented approach to partial differential equations which include nonlinearities. The book also includes variations of the finite element method such as different classes of meshes and basic functions. Practical application of the theory is emphasised, with development of all concepts leading ultimately to a description of their computational implementation illustrated using Matlab functions. The target audience primarily comprises applied researchers and practitioners in engineering, but the book may also be beneficial for graduate students.

  20. Spectral/hp element methods for CFD

    CERN Document Server

    Karniadakis, George Em

    1999-01-01

    Traditionally spectral methods in fluid dynamics were used in direct and large eddy simulations of turbulent flow in simply connected computational domains. The methods are now being applied to more complex geometries, and the spectral/hp element method, which incorporates both multi-domain spectral methods and high-order finite element methods, has been particularly successful. This book provides a comprehensive introduction to these methods. Written by leaders in the field, the book begins with a full explanation of fundamental concepts and implementation issues. It then illustrates how these methods can be applied to advection-diffusion and to incompressible and compressible Navier-Stokes equations. Drawing on both published and unpublished material, the book is an important resource for experienced researchers and for those new to the field.

  1. New mixed finite-element methods

    International Nuclear Information System (INIS)

    Franca, L.P.

    1987-01-01

    New finite-element methods are proposed for mixed variational formulations. The methods are constructed by adding to the classical Galerkin method various least-squares like terms. The additional terms involve integrals over element interiors, and include mesh-parameter dependent coefficients. The methods are designed to enhance stability. Consistency is achieved in the sense that exact solutions identically satisfy the variational equations.Applied to several problems, simple finite-element interpolations are rendered convergent, including convenient equal-order interpolations generally unstable within the Galerkin approach. The methods are subdivided into two classes according to the manner in which stability is attained: (1) circumventing Babuska-Brezzi condition methods; (2) satisfying Babuska-Brezzi condition methods. Convergence is established for each class of methods. Applications of the first class of methods to Stokes flow and compressible linear elasticity are presented. The second class of methods is applied to the Poisson, Timoshenko beam and incompressible elasticity problems. Numerical results demonstrate the good stability and accuracy of the methods, and confirm the error estimates

  2. The finite element response matrix method

    International Nuclear Information System (INIS)

    Nakata, H.; Martin, W.R.

    1983-02-01

    A new technique is developed with an alternative formulation of the response matrix method implemented with the finite element scheme. Two types of response matrices are generated from the Galerkin solution to the weak form of the diffusion equation subject to an arbitrary current and source. The piecewise polynomials are defined in two levels, the first for the local (assembly) calculations and the second for the global (core) response matrix calculations. This finite element response matrix technique was tested in two 2-dimensional test problems, 2D-IAEA benchmark problem and Biblis benchmark problem, with satisfatory results. The computational time, whereas the current code is not extensively optimized, is of the same order of the well estabilished coarse mesh codes. Furthermore, the application of the finite element technique in an alternative formulation of response matrix method permits the method to easily incorporate additional capabilities such as treatment of spatially dependent cross-sections, arbitrary geometrical configurations, and high heterogeneous assemblies. (Author) [pt

  3. A finite element method for neutron transport

    International Nuclear Information System (INIS)

    Ackroyd, R.T.

    1983-01-01

    A completely boundary-free maximum principle for the first-order Boltzmann equation is derived from the completely boundary-free maximum principle for the mixed-parity Boltzmann equation. When continuity is imposed on the trial function for directions crossing interfaces the completely boundary-free principle for the first-order Boltzmann equation reduces to a maximum principle previously established directly from first principles and indirectly by the Euler-Lagrange method. Present finite element methods for the first-order Boltzmann equation are based on a weighted-residual method which permits the use of discontinuous trial functions. The new principle for the first-order equation can be used as a basis for finite-element methods with the same freedom from boundary conditions as those based on the weighted-residual method. The extremum principle as the parent of the variationally-derived weighted-residual equations ensures their good behaviour. (author)

  4. Boundary element method for modelling creep behaviour

    International Nuclear Information System (INIS)

    Zarina Masood; Shah Nor Basri; Abdel Majid Hamouda; Prithvi Raj Arora

    2002-01-01

    A two dimensional initial strain direct boundary element method is proposed to numerically model the creep behaviour. The boundary of the body is discretized into quadratic element and the domain into quadratic quadrilaterals. The variables are also assumed to have a quadratic variation over the elements. The boundary integral equation is solved for each boundary node and assembled into a matrix. This matrix is solved by Gauss elimination with partial pivoting to obtain the variables on the boundary and in the interior. Due to the time-dependent nature of creep, the solution has to be derived over increments of time. Automatic time incrementation technique and backward Euler method for updating the variables are implemented to assure stability and accuracy of results. A flowchart of the solution strategy is also presented. (Author)

  5. Loading method of core constituting elements

    International Nuclear Information System (INIS)

    Kasai, Shigeo

    1976-01-01

    Purpose: To provide a remote-controlled replacing method for core constituting elements in a liquid-metal cooling fast breeder, wherein particularly, the core constituting elements are prevented from being loaded on the core position other than as designated. Constitution: The method comprises a first step which determines a position of a suitable neutron shielding body in order to measure a reference level of complete insertion of the core constituting elements, a second step which inserts a gripper for a fuel exchanger, a third step which decides stroke dimensions of the complete insertion, and a fourth step which discriminates the core constituting elements to begin handling of fuel rods. The method further comprises a fifth step which determines a loading position of fuel rod, and a sixth step which inserts and loads fuel rods into the core. The method still further comprises a seventh step which compares and judges the dimension of loading stroke and the dimension of complete inserting stroke so that when coincided, loading is completed, and when not coincided, loading is not completed and then the cycle of the fourth step is repeated. (Kawakami, Y.)

  6. Image segmentation with a finite element method

    DEFF Research Database (Denmark)

    Bourdin, Blaise

    1999-01-01

    regularization results, make possible to imagine a finite element resolution method.In a first time, the Mumford-Shah functional is introduced and some existing results are quoted. Then, a discrete formulation for the Mumford-Shah problem is proposed and its $\\Gamma$-convergence is proved. Finally, some...

  7. Finite element methods for incompressible flow problems

    CERN Document Server

    John, Volker

    2016-01-01

    This book explores finite element methods for incompressible flow problems: Stokes equations, stationary Navier-Stokes equations, and time-dependent Navier-Stokes equations. It focuses on numerical analysis, but also discusses the practical use of these methods and includes numerical illustrations. It also provides a comprehensive overview of analytical results for turbulence models. The proofs are presented step by step, allowing readers to more easily understand the analytical techniques.

  8. Crack Propagation by Finite Element Method

    Directory of Open Access Journals (Sweden)

    Luiz Carlos H. Ricardo

    2018-01-01

    Full Text Available Crack propagation simulation began with the development of the finite element method; the analyses were conducted to obtain a basic understanding of the crack growth. Today structural and materials engineers develop structures and materials properties using this technique. The aim of this paper is to verify the effect of different crack propagation rates in determination of crack opening and closing stress of an ASTM specimen under a standard suspension spectrum loading from FDandE SAE Keyhole Specimen Test Load Histories by finite element analysis. To understand the crack propagation processes under variable amplitude loading, retardation effects are observed

  9. A Novel Polygonal Finite Element Method: Virtual Node Method

    Science.gov (United States)

    Tang, X. H.; Zheng, C.; Zhang, J. H.

    2010-05-01

    Polygonal finite element method (PFEM), which can construct shape functions on polygonal elements, provides greater flexibility in mesh generation. However, the non-polynomial form of traditional PFEM, such as Wachspress method and Mean Value method, leads to inexact numerical integration. Since the integration technique for non-polynomial functions is immature. To overcome this shortcoming, a great number of integration points have to be used to obtain sufficiently exact results, which increases computational cost. In this paper, a novel polygonal finite element method is proposed and called as virtual node method (VNM). The features of present method can be list as: (1) It is a PFEM with polynomial form. Thereby, Hammer integral and Gauss integral can be naturally used to obtain exact numerical integration; (2) Shape functions of VNM satisfy all the requirements of finite element method. To test the performance of VNM, intensive numerical tests are carried out. It found that, in standard patch test, VNM can achieve significantly better results than Wachspress method and Mean Value method. Moreover, it is observed that VNM can achieve better results than triangular 3-node elements in the accuracy test.

  10. Mixed Element Formulation for the Finite Element-Boundary Integral Method

    National Research Council Canada - National Science Library

    Meese, J; Kempel, L. C; Schneider, S. W

    2006-01-01

    A mixed element approach using right hexahedral elements and right prism elements for the finite element-boundary integral method is presented and discussed for the study of planar cavity-backed antennas...

  11. Finite Element Method in Machining Processes

    CERN Document Server

    Markopoulos, Angelos P

    2013-01-01

    Finite Element Method in Machining Processes provides a concise study on the way the Finite Element Method (FEM) is used in the case of manufacturing processes, primarily in machining. The basics of this kind of modeling are detailed to create a reference that will provide guidelines for those who start to study this method now, but also for scientists already involved in FEM and want to expand their research. A discussion on FEM, formulations and techniques currently in use is followed up by machining case studies. Orthogonal cutting, oblique cutting, 3D simulations for turning and milling, grinding, and state-of-the-art topics such as high speed machining and micromachining are explained with relevant examples. This is all supported by a literature review and a reference list for further study. As FEM is a key method for researchers in the manufacturing and especially in the machining sector, Finite Element Method in Machining Processes is a key reference for students studying manufacturing processes but al...

  12. Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method

    Science.gov (United States)

    Rolin, Cedric; Kang, Enpu; Lee, Jeong-Hwan; Borghs, Gustaaf; Heremans, Paul; Genoe, Jan

    2017-01-01

    Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semiconducting films, independently from contact effects. We test our method on thin films of seven high-mobility organic semiconductors of both polarities: device fabrication is fully compatible with common transistor process flows and device measurements deliver consistent and precise values for the charge carrier mobility and threshold voltage in the high-charge carrier density regime that is representative of transistor operation. The gated van der Pauw method is broadly applicable to thin films of semiconductors and enables a simple and clean parameter extraction independent from contact effects. PMID:28397852

  13. Effective beam method for element concentrations

    International Nuclear Information System (INIS)

    Tolhurst, Thomas; Barbi, Mauricio; Tokaryk, Tim

    2015-01-01

    A method to evaluate chemical element concentrations in samples by generating an effective polychromatic beam using as initial input real monochromatic beam data is presented. There is a great diversity of research being conducted at synchrotron facilities around the world and a diverse set of beamlines to accommodate this research. Time is a precious commodity at synchrotron facilities; therefore, methods that can maximize the time spent collecting data are of value. At the same time the incident radiation spectrum, necessary for some research, may not be known on a given beamline. A preliminary presentation of a method applicable to X-ray fluorescence spectrocopic analyses that overcomes the lack of information about the incident beam spectrum that addresses both of these concerns is given here. The method is equally applicable for other X-ray sources so long as local conditions are considered. It relies on replacing the polychromatic spectrum in a standard fundamental parameters analysis with a set of effective monochromatic photon beams. A beam is associated with each element and can be described by an analytical function allowing extension to elements not included in the necessary calibration measurement(s)

  14. The calculation of deep levels in semiconductors by using a recursion method for super-cells

    International Nuclear Information System (INIS)

    Wong Yongliang.

    1987-01-01

    The paper presents the theory of deep levels in semiconductors, the super-cell approach to the theory of deep level impurities, the calculation of band structure by using the tight-binding method and the recursion method used to study the defects in the presence of lattice relaxation and extended defect complexes. 47 refs

  15. Crack Propagation by Finite Element Method

    OpenAIRE

    H. Ricardo, Luiz Carlos

    2017-01-01

    Crack propagation simulation began with the development of the finite element method; the analyses were conducted to obtain a basic understanding of the crack growth. Today structural and materials engineers develop structures and materials properties using this technique. The aim of this paper is to verify the effect of different crack propagation rates in determination of crack opening and closing stress of an ASTM specimen under a standard suspension spectrum loading from FD&E SAE Keyh...

  16. The finite element response Matrix method

    International Nuclear Information System (INIS)

    Nakata, H.; Martin, W.R.

    1983-01-01

    A new method for global reactor core calculations is described. This method is based on a unique formulation of the response matrix method, implemented with a higher order finite element method. The unique aspects of this approach are twofold. First, there are two levels to the overall calculational scheme: the local or assembly level and the global or core level. Second, the response matrix scheme, which is formulated at both levels, consists of two separate response matrices rather than one response matrix as is generally the case. These separate response matrices are seen to be quite beneficial for the criticality eigenvalue calculation, because they are independent of k /SUB eff/. The response matrices are generated from a Galerkin finite element solution to the weak form of the diffusion equation, subject to an arbitrary incoming current and an arbitrary distributed source. Calculational results are reported for two test problems, the two-dimensional International Atomic Energy Agency benchmark problem and a two-dimensional pressurized water reactor test problem (Biblis reactor), and they compare well with standard coarse mesh methods with respect to accuracy and efficiency. Moreover, the accuracy (and capability) is comparable to fine mesh for a fraction of the computational cost. Extension of the method to treat heterogeneous assemblies and spatial depletion effects is discussed

  17. Introduction to finite and spectral element methods using Matlab

    CERN Document Server

    Pozrikidis, Constantine

    2014-01-01

    The Finite Element Method in One Dimension. Further Applications in One Dimension. High-Order and Spectral Elements in One Dimension. The Finite Element Method in Two Dimensions. Quadratic and Spectral Elements in Two Dimensions. Applications in Mechanics. Viscous Flow. Finite and Spectral Element Methods in Three Dimensions. Appendices. References. Index.

  18. Boundary element methods for electrical engineers

    CERN Document Server

    POLJAK, D

    2005-01-01

    In the last couple of decades the Boundary Element Method (BEM) has become a well-established technique that is widely used for solving various problems in electrical engineering and electromagnetics. Although there are many excellent research papers published in the relevant literature that describe various BEM applications in electrical engineering and electromagnetics, there has been a lack of suitable textbooks and monographs on the subject. This book presents BEM in a simple fashion in order to help the beginner to understand the very basic principles of the method. It initially derives B

  19. Boundary element method for internal axisymmetric flow

    Directory of Open Access Journals (Sweden)

    Gokhman Alexander

    1999-01-01

    Full Text Available We present an accurate fast method for the computation of potential internal axisymmetric flow based on the boundary element technique. We prove that the computed velocity field asymptotically satisfies reasonable boundary conditions at infinity for various types of inlet/exit. Computation of internal axisymmetric potential flow is an essential ingredient in the three-dimensional problem of computation of velocity fields in turbomachines. We include the results of a practical application of the method to the computation of flow in turbomachines of Kaplan and Francis types.

  20. The blade element momentum (BEM) method

    DEFF Research Database (Denmark)

    Branlard, Emmanuel Simon Pierre

    2017-01-01

    The current chapter presents the blade element momentum (BEM) method. The BEM method for a steady uniform inflow is presented in a first section. Some of the ad-hoc corrections that are usually added to the algorithm are discussed in a second section. An exception is made to the tip-loss correction...... which is introduced early in the algorithm formulation for practical reasons. The ad-hoc corrections presented are: the tip-loss correction, the high-thrust correction (momentum breakdown) and the correction for wake rotation. The formulation of an unsteady BEM code is given in a third section...

  1. A finite element method for neutron transport

    International Nuclear Information System (INIS)

    Ackroyd, R.T.

    1978-01-01

    A variational treatment of the finite element method for neutron transport is given based on a version of the even-parity Boltzmann equation which does not assume that the differential scattering cross-section has a spherical harmonic expansion. The theory of minimum and maximum principles is based on the Cauchy-Schwartz equality and the properties of a leakage operator G and a removal operator C. For systems with extraneous sources, two maximum and one minimum principles are given in boundary free form, to ease finite element computations. The global error of an approximate variational solution is given, the relationship of one the maximum principles to the method of least squares is shown, and the way in which approximate solutions converge locally to the exact solution is established. A method for constructing local error bounds is given, based on the connection between the variational method and the method of the hypercircle. The source iteration technique and a maximum principle for a system with extraneous sources suggests a functional for a variational principle for a self-sustaining system. The principle gives, as a consequence of the properties of G and C, an upper bound to the lowest eigenvalue. A related functional can be used to determine both upper and lower bounds for the lowest eigenvalue from an inspection of any approximate solution for the lowest eigenfunction. The basis for the finite element is presented in a general form so that two modes of exploitation can be undertaken readily. The model can be in phase space, with positional and directional co-ordinates defining points of the model, or it can be restricted to the positional co-ordinates and an expansion in orthogonal functions used for the directional co-ordinates. Suitable sets of functions are spherical harmonics and Walsh functions. The latter set is appropriate if a discrete direction representation of the angular flux is required. (author)

  2. Standardization of Schwarz-Christoffel transformation for engineering design of semiconductor and hybrid integrated-circuit elements

    Science.gov (United States)

    Yashin, A. A.

    1985-04-01

    A semiconductor or hybrid structure into a calculable two-dimensional region mapped by the Schwarz-Christoffel transformation and a universal algorithm can be constructed on the basis of Maxwell's electro-magnetic-thermal similarity principle for engineering design of integrated-circuit elements. The design procedure involves conformal mapping of the original region into a polygon and then the latter into a rectangle with uniform field distribution, where conductances and capacitances are calculated, using tabulated standard mapping functions. Subsequent synthesis of a device requires inverse conformal mapping. Devices adaptable as integrated-circuit elements are high-resistance film resistors with periodic serration, distributed-resistance film attenuators with high transformation ratio, coplanar microstrip lines, bipolar transistors, directional couplers with distributed coupling to microstrip lines for microwave bulk devices, and quasirregular smooth matching transitions from asymmetric to coplanar microstrip lines.

  3. Apparatus and method for assembling fuel elements

    International Nuclear Information System (INIS)

    Arya, S.P.

    1978-01-01

    A nuclear fuel element assembling method and apparatus is preferably operable under programmed control unit to receive fuel rods from storage, arrange them into axially aligned stacks of closely monitored length, and transfer the stacks of fuel rods to a loading device for insertion into longitudinal passages in the fuel elements. In order to handle large numbers of one or more classifications of fuel rods or other cylindrical parts, the assembling apparatus includes at least two feed troughs each formed by a pair of screw members with a movable table having a plurality of stacking troughs for alignment with the feed troughs and with a conveyor for delivering the stacks to the loading device, the fuel rods being moved along the stacking troughs upon a fluid cushion. 23 claims, 6 figures

  4. Method of detecting a fuel element failure

    International Nuclear Information System (INIS)

    Cohen, P.

    1975-01-01

    A method is described for detecting a fuel element failure in a liquid-sodium-cooled fast breeder reactor consisting of equilibrating a sample of the coolant with a molten salt consisting of a mixture of barium iodide and strontium iodide (or other iodides) whereby a large fraction of any radioactive iodine present in the liquid sodium coolant exchanges with the iodine present in the salt; separating the molten salt and sodium; if necessary, equilibrating the molten salt with nonradioactive sodium and separating the molten salt and sodium; and monitoring the molten salt for the presence of iodine, the presence of iodine indicating that the cladding of a fuel element has failed. (U.S.)

  5. Generalized multiscale finite element methods: Oversampling strategies

    KAUST Repository

    Efendiev, Yalchin R.; Galvis, Juan; Li, Guanglian; Presho, Michael

    2014-01-01

    In this paper, we propose oversampling strategies in the generalized multiscale finite element method (GMsFEM) framework. The GMsFEM, which has been recently introduced in Efendiev et al. (2013b) [Generalized Multiscale Finite Element Methods, J. Comput. Phys., vol. 251, pp. 116-135, 2013], allows solving multiscale parameter-dependent problems at a reduced computational cost by constructing a reduced-order representation of the solution on a coarse grid. The main idea of the method consists of (1) the construction of snapshot space, (2) the construction of the offline space, and (3) construction of the online space (the latter for parameter-dependent problems). In Efendiev et al. (2013b) [Generalized Multiscale Finite Element Methods, J. Comput. Phys., vol. 251, pp. 116-135, 2013], it was shown that the GMsFEM provides a flexible tool to solve multiscale problems with a complex input space by generating appropriate snapshot, offline, and online spaces. In this paper, we develop oversampling techniques to be used in this context (see Hou and Wu (1997) where oversampling is introduced for multiscale finite element methods). It is known (see Hou and Wu (1997)) that the oversampling can improve the accuracy of multiscale methods. In particular, the oversampling technique uses larger regions (larger than the target coarse block) in constructing local basis functions. Our motivation stems from the analysis presented in this paper, which shows that when using oversampling techniques in the construction of the snapshot space and offline space, GMsFEM will converge independent of small scales and high contrast under certain assumptions. We consider the use of a multiple eigenvalue problems to improve the convergence and discuss their relation to single spectral problems that use oversampled regions. The oversampling procedures proposed in this paper differ from those in Hou and Wu (1997). In particular, the oversampling domains are partially used in constructing local

  6. Capture analysis of element content of a substance with other neutron methods

    International Nuclear Information System (INIS)

    Kurbanov, B.I.

    2004-01-01

    Full text: Neutron analysis method of determining element composition have found wide range of applications in industry thanks to different types of interaction of neutron with substances /1/. With the aim of widening the range of problems to be solved, on the basis of the device /2/ for determining the element content of substance, possibilities of combining the method based on the use of neutron capture gamma-ray spectrometry with other neutron methods, in particular neutron activation analysis and neutron absorption analysis were studied. In this radionuclide source ( 252 Cf) with the yield of 1,5 x 10 7 neutron/sec is used. By means of using neutron capture gamma radiation spectrometry the possibilities of determining some elements (H, B, N, S etc. ), which are not determined by very widely used method, activation analysis. These elements can be determined by both the semiconductor and scintillation detectors with parameters fitting the manufacturing requirements. And for a number of elements ( B, Cl, Cd, Sm, Gd) very high limits of determination ( up to 10- 5 %) are possible using semiconductor Ge (Li) -detectors with high resolution. Possibility of determination of some 'well' activated elements ( K, Al, Fe, Mn, Ti, Sc etc.) in samples of ore and products of their processing using the neutron-activation analysis. For 1 hour of irradiation on the experimental device quite accurate analytical peak, of these elements are obtained, allowing to determine them qualitatively. However, with decreasing neutron yield of radionuclide source it becomes more difficult to achieve the necessary parameters both in neutron capture and activation analysis. Experimental works on determination of some elements with large cross-sections of capture ( B, Cd, Sm ) by absorption of neutrons in the investigated substance, i.e. using the neutron absorption analysis method with absence of other large capture cross section elements in the samples being studied

  7. A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation

    Energy Technology Data Exchange (ETDEWEB)

    Muscato, Orazio; Di Stefano, Vincenza [Univ. degli Studi di Catania (Italy). Dipt. di Matematica e Informatica; Wagner, Wolfgang [Weierstrass-Institut fuer Angewandte Analysis und Stochastik (WIAS) Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin (Germany)

    2012-11-01

    This paper is concerned with electron transport and heat generation in semiconductor devices. An improved version of the electrothermal Monte Carlo method is presented. This modification has better approximation properties due to reduced statistical fluctuations. The corresponding transport equations are provided and results of numerical experiments are presented.

  8. General and efficient method for calculating modulation ressponses and noise spectra of active semiconductor waveguides

    DEFF Research Database (Denmark)

    Blaaberg, Søren; Öhman, Filip; Mørk, Jesper

    2008-01-01

    We present a theoretical method for obtaining small-signal responses in a spatially resolved active semiconductor waveguide including finite end-facet reflectivities and amplified spontaneous emission. RF-modulation responses and output noise spectra of an SOA are shown....

  9. Adaptive finite element methods for differential equations

    CERN Document Server

    Bangerth, Wolfgang

    2003-01-01

    These Lecture Notes discuss concepts of `self-adaptivity' in the numerical solution of differential equations, with emphasis on Galerkin finite element methods. The key issues are a posteriori error estimation and it automatic mesh adaptation. Besides the traditional approach of energy-norm error control, a new duality-based technique, the Dual Weighted Residual method for goal-oriented error estimation, is discussed in detail. This method aims at economical computation of arbitrary quantities of physical interest by properly adapting the computational mesh. This is typically required in the design cycles of technical applications. For example, the drag coefficient of a body immersed in a viscous flow is computed, then it is minimized by varying certain control parameters, and finally the stability of the resulting flow is investigated by solving an eigenvalue problem. `Goal-oriented' adaptivity is designed to achieve these tasks with minimal cost. At the end of each chapter some exercises are posed in order ...

  10. Microlocal methods in the analysis of the boundary element method

    DEFF Research Database (Denmark)

    Pedersen, Michael

    1993-01-01

    The application of the boundary element method in numerical analysis is based upon the use of boundary integral operators stemming from multiple layer potentials. The regularity properties of these operators are vital in the development of boundary integral equations and error estimates. We show...

  11. Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

    International Nuclear Information System (INIS)

    Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

    2016-01-01

    The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception–and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In 2 O 3 (ITO)—converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein–Moss shift that are consistent with previous studies on In 2 O 3 single crystals and thin films. - Highlights: • The Tauc method of band gap measurement is re-evaluated for crystalline materials. • Graphical method proposed for extracting optical band gaps from absorption spectra. • The proposed method incorporates an energy broadening term for energy transitions. • Values for ITO were self-consistent between two different measurement methods.

  12. Final Report of the Project "From the finite element method to the virtual element method"

    Energy Technology Data Exchange (ETDEWEB)

    Manzini, Gianmarco [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Gyrya, Vitaliy [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-12-20

    The Finite Element Method (FEM) is a powerful numerical tool that is being used in a large number of engineering applications. The FEM is constructed on triangular/tetrahedral and quadrilateral/hexahedral meshes. Extending the FEM to general polygonal/polyhedral meshes in straightforward way turns out to be extremely difficult and leads to very complex and computationally expensive schemes. The reason for this failure is that the construction of the basis functions on elements with a very general shape is a non-trivial and complex task. In this project we developed a new family of numerical methods, dubbed the Virtual Element Method (VEM) for the numerical approximation of partial differential equations (PDE) of elliptic type suitable to polygonal and polyhedral unstructured meshes. We successfully formulated, implemented and tested these methods and studied both theoretically and numerically their stability, robustness and accuracy for diffusion problems, convection-reaction-diffusion problems, the Stokes equations and the biharmonic equations.

  13. Adaptive finite element method for shape optimization

    KAUST Repository

    Morin, Pedro; Nochetto, Ricardo H.; Pauletti, Miguel S.; Verani, Marco

    2012-01-01

    We examine shape optimization problems in the context of inexact sequential quadratic programming. Inexactness is a consequence of using adaptive finite element methods (AFEM) to approximate the state and adjoint equations (via the dual weighted residual method), update the boundary, and compute the geometric functional. We present a novel algorithm that equidistributes the errors due to shape optimization and discretization, thereby leading to coarse resolution in the early stages and fine resolution upon convergence, and thus optimizing the computational effort. We discuss the ability of the algorithm to detect whether or not geometric singularities such as corners are genuine to the problem or simply due to lack of resolution - a new paradigm in adaptivity. © EDP Sciences, SMAI, 2012.

  14. Adaptive finite element method for shape optimization

    KAUST Repository

    Morin, Pedro

    2012-01-16

    We examine shape optimization problems in the context of inexact sequential quadratic programming. Inexactness is a consequence of using adaptive finite element methods (AFEM) to approximate the state and adjoint equations (via the dual weighted residual method), update the boundary, and compute the geometric functional. We present a novel algorithm that equidistributes the errors due to shape optimization and discretization, thereby leading to coarse resolution in the early stages and fine resolution upon convergence, and thus optimizing the computational effort. We discuss the ability of the algorithm to detect whether or not geometric singularities such as corners are genuine to the problem or simply due to lack of resolution - a new paradigm in adaptivity. © EDP Sciences, SMAI, 2012.

  15. Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji-Won; Rondinone, Adam Justin; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

    2017-09-19

    The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component comprising at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

  16. Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

    Science.gov (United States)

    Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji Won; Rondinone, Adam J.; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

    2014-06-24

    The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

  17. Two gamma dose evaluation methods for silicon semiconductor detector

    International Nuclear Information System (INIS)

    Chen Faguo; Jin Gen; Yang Yapeng; Xu Yuan

    2011-01-01

    Silicon PIN diodes have been widely used as personal and areal dosimeters because of their small volume, simplicity and real-time operation. However, because silicon is neither a tissue-equivalent nor an air-equivalent material, an intrinsic disadvantage for silicon dosimeters is that a significant over-response occurs at low-energy region, especially below 200 keV. Using a energy compensation filter to flatten the energy response is one method overcoming this disadvantage. But for dose compensation method, the estimated dose depends only on the number of the detector pulses. So a weight function method was introduced to evaluate gamma dose, which depends on pulse number as well as its amplitude. (authors)

  18. The CRF-method for semiconductors' intravalley collision kernels: I – the 2D case

    Directory of Open Access Journals (Sweden)

    Claudio Barone

    1992-05-01

    Full Text Available If the collisions are redefined as a flux a kinetic conservation law can be written in divergence form. This can be handled numerically, in the framework of Finite Particle Approximation, using the CRF-method. In the present paper the relevant quantities needed for computer implementation of the CRF-method are derived in the case of a 2D momentum space for the semiconductors' intravalley collision kernels.

  19. A semiclassical method in the theory of light scattering by semiconductor quantum dots

    International Nuclear Information System (INIS)

    Lang, I. G.; Korovin, L. I.; Pavlov, S. T.

    2008-01-01

    A semiclassical method is proposed for the theoretical description of elastic light scattering by arbitrary semiconductor quantum dots under conditions of size quantization. This method involves retarded potentials and allows one to dispense with boundary conditions for electric and magnetic fields. Exact results for the Umov-Poynting vector at large distances from quantum dots in the case of monochromatic and pulsed irradiation and formulas for differential scattering cross sections are obtained

  20. The CRF-method for semiconductors' intravalley collision kernels: II – The 3D case

    Directory of Open Access Journals (Sweden)

    Claudio Barone

    1993-05-01

    Full Text Available If the collisions are redefined as a flux a kinetic conservation law can be written in divergence form. This can be handled numerically, in the framework of Finite Particle Approximation, using the CRF-method. In this paper we use the CRF-method for semiconductors' intravalley collision kernels. We extend the results obtained in a previous paper to the case of a 3D momentum space.

  1. New formulation of the discrete element method

    Science.gov (United States)

    Rojek, Jerzy; Zubelewicz, Aleksander; Madan, Nikhil; Nosewicz, Szymon

    2018-01-01

    A new original formulation of the discrete element method based on the soft contact approach is presented in this work. The standard DEM has heen enhanced by the introduction of the additional (global) deformation mode caused by the stresses in the particles induced by the contact forces. Uniform stresses and strains are assumed for each particle. The stresses are calculated from the contact forces. The strains are obtained using an inverse constitutive relationship. The strains allow us to obtain deformed particle shapes. The deformed shapes (ellipses) are taken into account in contact detection and evaluation of the contact forces. A simple example of a uniaxial compression of a rectangular specimen, discreti.zed with equal sized particles is simulated to verify the DDEM algorithm. The numerical example shows that a particle deformation changes the particle interaction and the distribution of forces in the discrete element assembly. A quantitative study of micro-macro elastic properties proves the enhanced capabilities of the DDEM as compared to standard DEM.

  2. Method of manufacturing nuclear fuel elements

    International Nuclear Information System (INIS)

    Ishida, Masao; Oguma, Masaomi.

    1980-01-01

    Purpose: To effectively prevent the bending of nuclear fuel elements in the reactor by grinding the end faces of pellets due to their mutual sliding. Method: In the manufacturing process of nuclear fuel elements, a plurality of pellets whose sides have been polished are fed one by one by way of a feeding mechanism through the central aperture in an electric motor into movable arms and retained horizontally with the central axis by being held on the side. Then, the pellet held by one of the arms is urged to another pellet held by the other of the arms by way of a pressing mechanism and the mating end faces of both of the pellets are polished by mutual sliding. Thereafter, the grinding dusts resulted are eliminated by drawing pressurized air and then the pellets are enforced into a cladding tube. Thus, the pellets are charged into the cladding tube with both polished end faces being contacted to each other, whereby the axial force is uniformly transmitted within the end faces to prevent the bending of the cladding tube. (Kawakami, Y.)

  3. A Novel Defect Inspection Method for Semiconductor Wafer Based on Magneto-Optic Imaging

    Science.gov (United States)

    Pan, Z.; Chen, L.; Li, W.; Zhang, G.; Wu, P.

    2013-03-01

    The defects of semiconductor wafer may be generated from the manufacturing processes. A novel defect inspection method of semiconductor wafer is presented in this paper. The method is based on magneto-optic imaging, which involves inducing eddy current into the wafer under test, and detecting the magnetic flux associated with eddy current distribution in the wafer by exploiting the Faraday rotation effect. The magneto-optic image being generated may contain some noises that degrade the overall image quality, therefore, in this paper, in order to remove the unwanted noise present in the magneto-optic image, the image enhancement approach using multi-scale wavelet is presented, and the image segmentation approach based on the integration of watershed algorithm and clustering strategy is given. The experimental results show that many types of defects in wafer such as hole and scratch etc. can be detected by the method proposed in this paper.

  4. Particle dispersing system and method for testing semiconductor manufacturing equipment

    Science.gov (United States)

    Chandrachood, Madhavi; Ghanayem, Steve G.; Cantwell, Nancy; Rader, Daniel J.; Geller, Anthony S.

    1998-01-01

    The system and method prepare a gas stream comprising particles at a known concentration using a particle disperser for moving particles from a reservoir of particles into a stream of flowing carrier gas. The electrostatic charges on the particles entrained in the carrier gas are then neutralized or otherwise altered, and the resulting particle-laden gas stream is then diluted to provide an acceptable particle concentration. The diluted gas stream is then split into a calibration stream and the desired output stream. The particles in the calibration stream are detected to provide an indication of the actual size distribution and concentration of particles in the output stream that is supplied to a process chamber being analyzed. Particles flowing out of the process chamber within a vacuum pumping system are detected, and the output particle size distribution and concentration are compared with the particle size distribution and concentration of the calibration stream in order to determine the particle transport characteristics of a process chamber, or to determine the number of particles lodged in the process chamber as a function of manufacturing process parameters such as pressure, flowrate, temperature, process chamber geometry, particle size, particle charge, and gas composition.

  5. Nuclear analytical methods for platinum group elements

    International Nuclear Information System (INIS)

    2005-04-01

    Platinum group elements (PGE) are of special interest for analytical research due to their economic importance like chemical peculiarities as catalysts, medical applications as anticancer drugs, and possible environmental detrimental impact as exhaust from automobile catalyzers. Natural levels of PGE are so low in concentration that most of the current analytical techniques approach their limit of detection capacity. In addition, Ru, Rh, Pd, Re, Os, Ir, and Pt analyses still constitute a challenge in accuracy and precision of quantification in natural matrices. Nuclear analytical techniques, such as neutron activation analysis, X ray fluorescence, or proton-induced X ray emission (PIXE), which are generally considered as reference methods for many analytical problems, are useful as well. However, due to methodological restrictions, they can, in most cases, only be applied after pre-concentration and under special irradiation conditions. This report was prepared following a coordinated research project and a consultants meeting addressing the subject from different viewpoints. The experts involved suggested to discuss the issue according to the (1) application, hence, the concentration levels encountered, and (2) method applied for analysis. Each of the different fields of application needs special consideration for sample preparation, PGE pre-concentration, and determination. Additionally, each analytical method requires special attention regarding the sensitivity and sample type. Quality assurance/quality control aspects are considered towards the end of the report. It is intended to provide the reader of this publication with state-of-the-art information on the various aspects of PGE analysis and to advise which technique might be most suitable for a particular analytical problem related to platinum group elements. In particular, many case studies described in detail from the authors' laboratory experience might help to decide which way to go. As in many cases

  6. Development of polygon elements based on the scaled boundary finite element method

    International Nuclear Information System (INIS)

    Chiong, Irene; Song Chongmin

    2010-01-01

    We aim to extend the scaled boundary finite element method to construct conforming polygon elements. The development of the polygonal finite element is highly anticipated in computational mechanics as greater flexibility and accuracy can be achieved using these elements. The scaled boundary polygonal finite element will enable new developments in mesh generation, better accuracy from a higher order approximation and better transition elements in finite element meshes. Polygon elements of arbitrary number of edges and order have been developed successfully. The edges of an element are discretised with line elements. The displacement solution of the scaled boundary finite element method is used in the development of shape functions. They are shown to be smooth and continuous within the element, and satisfy compatibility and completeness requirements. Furthermore, eigenvalue decomposition has been used to depict element modes and outcomes indicate the ability of the scaled boundary polygonal element to express rigid body and constant strain modes. Numerical tests are presented; the patch test is passed and constant strain modes verified. Accuracy and convergence of the method are also presented and the performance of the scaled boundary polygonal finite element is verified on Cook's swept panel problem. Results show that the scaled boundary polygonal finite element method outperforms a traditional mesh and accuracy and convergence are achieved from fewer nodes. The proposed method is also shown to be truly flexible, and applies to arbitrary n-gons formed of irregular and non-convex polygons.

  7. Element-by-element parallel spectral-element methods for 3-D teleseismic wave modeling

    KAUST Repository

    Liu, Shaolin

    2017-09-28

    The development of an efficient algorithm for teleseismic wave field modeling is valuable for calculating the gradients of the misfit function (termed misfit gradients) or Fréchet derivatives when the teleseismic waveform is used for adjoint tomography. Here, we introduce an element-by-element parallel spectral-element method (EBE-SEM) for the efficient modeling of teleseismic wave field propagation in a reduced geology model. Under the plane-wave assumption, the frequency-wavenumber (FK) technique is implemented to compute the boundary wave field used to construct the boundary condition of the teleseismic wave incidence. To reduce the memory required for the storage of the boundary wave field for the incidence boundary condition, a strategy is introduced to efficiently store the boundary wave field on the model boundary. The perfectly matched layers absorbing boundary condition (PML ABC) is formulated using the EBE-SEM to absorb the scattered wave field from the model interior. The misfit gradient can easily be constructed in each time step during the calculation of the adjoint wave field. Three synthetic examples demonstrate the validity of the EBE-SEM for use in teleseismic wave field modeling and the misfit gradient calculation.

  8. Application of finite-element-methods in food processing

    DEFF Research Database (Denmark)

    Risum, Jørgen

    2004-01-01

    Presentation of the possible use of finite-element-methods in food processing. Examples from diffusion studies are given.......Presentation of the possible use of finite-element-methods in food processing. Examples from diffusion studies are given....

  9. Method of measuring distance between fuel element

    International Nuclear Information System (INIS)

    Urata, Megumu.

    1991-01-01

    The distance between fuel elements contained in a pool is measured in a contactless manner even for a narrow distance less than 1 mm. That is, the equipment for measuring the distance between spent fuel elements of a spent fuel assembly in a nuclear reactor comprises a optical fiber scope, a lens, an industrial TV camera and a monitor TV. The top end of the optical fiber scope is inserted between fuel elements to be measured. The state thereof is displayed on the TV screen to measure the distance between the fuel elements. The measured results are compared with a previously formed calibration curve to determine the value between the fuel elements. Then, the distance between the fuel elements can be determined in the pool of a power plant without dismantling the fuel assembly, to investigate the state of the bending and estimate the fuel working life. (I.S.)

  10. X-Ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Kim, Hyun Jung (Inventor); Skuza, Jonathan R. (Inventor); Lee, Kunik (Inventor); King, Glen C. (Inventor); Choi, Sang Hyouk (Inventor)

    2017-01-01

    An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

  11. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.; Almuslem, A. S.; Gumus, Abdurrahman; Hussain, Aftab M.; Hussain, Aftab M.; Cruz, Melvin; Hussain, Muhammad Mustafa

    2016-01-01

    shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using

  12. Accumulation of heavy metals and trace elements in fluvial sediments received effluents from traditional and semiconductor industries.

    Science.gov (United States)

    Hsu, Liang-Ching; Huang, Ching-Yi; Chuang, Yen-Hsun; Chen, Ho-Wen; Chan, Ya-Ting; Teah, Heng Yi; Chen, Tsan-Yao; Chang, Chiung-Fen; Liu, Yu-Ting; Tzou, Yu-Min

    2016-09-29

    Metal accumulation in sediments threatens adjacent ecosystems due to the potential of metal mobilization and the subsequent uptake into food webs. Here, contents of heavy metals (Cd, Cr, Cu, Ni, Pb, and Zn) and trace elements (Ga, In, Mo, and Se) were determined for river waters and bed sediments that received sewage discharged from traditional and semiconductor industries. We used principal component analysis (PCA) to determine the metal distribution in relation to environmental factors such as pH, EC, and organic matter (OM) contents in the river basin. While water PCA categorized discharged metals into three groups that implied potential origins of contamination, sediment PCA only indicated a correlation between metal accumulation and OM contents. Such discrepancy in metal distribution between river water and bed sediment highlighted the significance of physical-chemical properties of sediment, especially OM, in metal retention. Moreover, we used Se XANES as an example to test the species transformation during metal transportation from effluent outlets to bed sediments and found a portion of Se inventory shifted from less soluble elemental Se to the high soluble and toxic selenite and selenate. The consideration of environmental factors is required to develop pollution managements and assess environmental risks for bed sediments.

  13. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  14. The finite element method in engineering, 2nd edition

    International Nuclear Information System (INIS)

    Rao, S.S.

    1986-01-01

    This work provides a systematic introduction to the various aspects of the finite element method as applied to engineering problems. Contents include: introduction to finite element method; solution of finite element equations; solid and structural mechanics; static analysis; dynamic analysis; heat transfer; fluid mechanics and additional applications

  15. Method for inspecting nuclear reactor fuel elements

    International Nuclear Information System (INIS)

    Jabsen, F.S.

    1979-01-01

    A technique for disassembling a nuclear reactor fuel element without destroying the individual fuel pins and other structural components from which the element is assembled is described. A traveling bridge and trolley span a water-filled spent fuel storage pool and support a strongback. The strongback is under water and provides a working surface on which the spent fuel element is placed for inspection and for the manipulation that is associated with disassembly and assembly. To remove, in a non-destructive manner, the grids that hold the fuel pins in the proper relative positions within the element, bars are inserted through apertures in the grids with the aid of special tools. These bars are rotated to flex the adjacent grid walls and, in this way relax the physical engagement between protruding portions of the grid walls and the associated fuel pins. With the grid structure so flexed to relax the physical grip on the individual fuel pins, these pins can be withdrawn for inspection or replacement as necessary without imposing a need to destroy fuel element components

  16. A multiscale mortar multipoint flux mixed finite element method

    KAUST Repository

    Wheeler, Mary Fanett; Xue, Guangri; Yotov, Ivan

    2012-01-01

    In this paper, we develop a multiscale mortar multipoint flux mixed finite element method for second order elliptic problems. The equations in the coarse elements (or subdomains) are discretized on a fine grid scale by a multipoint flux mixed finite

  17. α-spectrometric device equipped with semi-conductors for direct measurement of transuranium elements on large area filters

    International Nuclear Information System (INIS)

    Fessler, H.; Pawelzik, J.

    1984-10-01

    A device was developed with an array of 8 silicon surface barrier detectors inside a vacuum chamber containing a rotating sample holder for large areas (200 mm diameter) aerosol filters. It serves for quick identification of α-emitters on these aerosol filters, and allows to measure the α-particles with a relatively constant efficiency along a filter diameter. Thus, the radiochemical treatment of single filters can be avoided. Troubles appeared in the course of development of defective semiconductors and their temperature dependence. To suppress the influence of temperature a cooling device was built. During practical testing a cross-efficiency of 13.6% was measured. It is possible to identify α-emitting nuclides with an activity of 10 -1 Bq per sample during about 2 hours of measuring time. Appropriate methodes of calculation are indicated. The data output of the device is suited for transfer to a computer. (orig./HP) [de

  18. Semiconductor device simulation by a new method of solving poisson, Laplace and Schrodinger equations

    International Nuclear Information System (INIS)

    Sharifi, M. J.; Adibi, A.

    2000-01-01

    In this paper, we have extended and completed our previous work, that was introducing a new method for finite differentiation. We show the applicability of the method for solving a wide variety of equations such as poisson, Laplace and Schrodinger. These equations are fundamental to the most semiconductor device simulators. In a section, we solve the Shordinger equation by this method in several cases including the problem of finding electron concentration profile in the channel of a HEMT. In another section, we solve the Poisson equation by this method, choosing the problem of SBD as an example. Finally we solve the Laplace equation in two dimensions and as an example, we focus on the VED. In this paper, we have shown that, the method can get stable and precise results in solving all of these problems. Also the programs which have been written based on this method become considerably faster, more clear, and more abstract

  19. Use of radioactive tracers in the semiconductor industry

    International Nuclear Information System (INIS)

    Akerman, Karol

    1975-01-01

    Manufacture of the semiconductor materials comprises production and purification of the raw materials (GeC14 or SiHC13), purification of the elemental semiconductors by metallurgical methods (including zone melting), production and doping of single crystals, dividing the crystals into slices of suitable size, formation of p-n junctions and fabrication of the finished semiconductor devices. In the sequence of operations, the behavior of very small quantities of an element must be monitored, and radioactive tracers are often used to solve these problems. Examples are given of the use of radioactive tracers in the semiconductor industry

  20. Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device

    Directory of Open Access Journals (Sweden)

    Mohana Sundaram Muthuvalu

    2015-12-01

    Full Text Available High reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters to improve device reliability and extend operating life. The reliability of a semiconductor is determined by junction temperature. This paper gives a useful analysis on mathematical approach which can be implemented to predict temperature of a silicon die. The problem could be modeled as heat conduction equation. In this study, numerical approach based on implicit scheme and Arithmetic Mean (AM iterative method will be applied to solve the governing heat conduction equation. Numerical results are also included in order to assert the effectiveness of the proposed technique.

  1. PREFACE: Euro-TMCS I: Theory, Modelling and Computational Methods for Semiconductors

    Science.gov (United States)

    Gómez-Campos, F. M.; Rodríguez-Bolívar, S.; Tomić, S.

    2015-05-01

    The present issue contains a selection of the best contributed works presented at the first Euro-TMCS conference (Theory, Modelling and Computational Methods for Semiconductors, European Session). The conference was held at Faculty of Sciences, Universidad de Granada, Spain on 28st-30st January 2015. This conference is the first European edition of the TMCS conference series which started in 2008 at the University of Manchester and has always been held in the United Kingdom. Four previous conferences have been previously carried out (Manchester 2008, York 2010, Leeds 2012 and Salford 2014). Euro-TMCS is run for three days; the first one devoted to giving invited tutorials, aimed particularly at students, on recent development of theoretical methods. On this occasion the session was focused on the presentation of widely-used computational methods for the modelling of physical processes in semiconductor materials. Freely available simulation software (SIESTA, Quantum Espresso and Yambo) as well as commercial software (TiberCad and MedeA) were presented in the conference by members of their development team, offering to the audience an overview of their capabilities for research. The second part of the conference showcased prestigious invited and contributed oral presentations, alongside poster sessions, in which direct discussion with authors was promoted. The scope of this conference embraces modelling, theory and the use of sophisticated computational tools in semiconductor science and technology. Theoretical approaches represented in this meeting included: Density Functional Theory, Semi-empirical Electronic Structure Methods, Multi-scale Approaches, Modelling of PV devices, Electron Transport, and Graphene. Topics included, but were not limited to: Optical Properties of Quantum Nanostructures including Colloids and Nanotubes, Plasmonics, Magnetic Semiconductors, Photonic Structures, and Electronic Devices. The Editors Acknowledgments: We would like to thank all

  2. Magnetic filter apparatus and method for generating cold plasma in semiconductor processing

    Science.gov (United States)

    Vella, M.C.

    1996-08-13

    Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.

  3. PREFACE: 3rd Workshop on Theory, Modelling and Computational Methods for Semiconductors (TMCSIII)

    Science.gov (United States)

    Califano, Marco; Migliorato, Max; Probert, Matt

    2012-05-01

    These conference proceedings contain the written papers of the contributions presented at the 3rd International Conference on Theory, Modelling and Computational Methods for Semiconductor materials and nanostructures. The conference was held at the School of Electronic and Electrical Engineering, University of Leeds, Leeds, UK on 18-20 January 2012. The previous conferences in this series took place in 2010 at St William's College, York and in 2008 at the University of Manchester, UK. The development of high-speed computer architectures is finally allowing the routine use of accurate methods for calculating the structural, thermodynamic, vibrational, optical and electronic properties of semiconductors and their hetero- and nano-structures. The scope of this conference embraces modelling, theory and the use of sophisticated computational tools in semiconductor science and technology, where there is substantial potential for time-saving in R&D. Theoretical approaches represented in this meeting included: Density Functional Theory, Tight Binding, Semiempirical Pseudopotential Methods, Effective Mass Models, Empirical Potential Methods and Multiscale Approaches. Topics included, but were not limited to: Optical and Transport Properties of Quantum Nanostructures including Colloids and Nanotubes, Plasmonics, Magnetic Semiconductors, Graphene, Lasers, Photonic Structures, Photovoltaic and Electronic Devices. This workshop ran for three days, with the objective of bringing together UK and international leading experts in the theoretical modelling of Group IV, III-V and II-VI semiconductors, as well as students, postdocs and early-career researchers. The first day focused on providing an introduction and overview of this vast field, aimed particularly at students, with several lectures given by recognised experts in various theoretical approaches. The following two days showcased some of the best theoretical research carried out in the UK in this field, with several

  4. A novel method for simultaneous observations of plasma ion and electron temperatures using a semiconductor-detector array

    International Nuclear Information System (INIS)

    Cho, T.; Numakura, T.; Kohagura, J.; Hirata, M.; Minami, R.; Watanabe, H.; Sasuga, T.; Nishizawa, Y.; Yoshida, M.; Nagashima, S.; Nakashima, Y.; Ogura, K.; Tamano, T.; Yatsu, K.; Miyoshi, S.

    2002-01-01

    A new method for a simultaneous observation of both plasma ion and electron temperatures is proposed using one semiconductor-detector array alone. This method will provide a new application of semiconductor-detector arrays for monitoring the key parameter set of nuclear-fusion triple product (i.e., ion temperatures, densities, and confinement time) as well as for clarifying physics mechanisms of energy transport between plasma ions and electrons under various plasma confining conditions. This method is developed on the basis of an alternative 'positive' use of a semiconductor 'dead layer'; that is, an SiO 2 layer is employed as a reliable ultra-thin energy analysis filter for low-energy charge-exchanged neutral particles from plasmas ranging in ion temperatures from 0.1 to several tens of kilo-electron-volts. Using recent fabrication techniques for the thin and uniform SiO 2 layers of the order of tens to hundreds of angstrom, our computer simulation and its experimental verification show the availability of such semiconductors for distinguishing neutral particles (for ion temperatures) from X-rays (for electron temperatures). These are simultaneously emitted from the plasmas into semiconductor detectors; however, we employ their quite different penetration lengths and the resultant different deposition depths and profiles in semiconductor materials. As a result, their output signals are distinguishable for these two different and fundamental species of plasmas

  5. The finite element method its basis and fundamentals

    CERN Document Server

    Zienkiewicz, Olek C; Zhu, JZ

    2013-01-01

    The Finite Element Method: Its Basis and Fundamentals offers a complete introduction to the basis of the finite element method, covering fundamental theory and worked examples in the detail required for readers to apply the knowledge to their own engineering problems and understand more advanced applications. This edition sees a significant rearrangement of the book's content to enable clearer development of the finite element method, with major new chapters and sections added to cover: Weak forms Variational forms Multi-dimensional field prob

  6. A simple finite element method for linear hyperbolic problems

    International Nuclear Information System (INIS)

    Mu, Lin; Ye, Xiu

    2017-01-01

    Here, we introduce a simple finite element method for solving first order hyperbolic equations with easy implementation and analysis. Our new method, with a symmetric, positive definite system, is designed to use discontinuous approximations on finite element partitions consisting of arbitrary shape of polygons/polyhedra. Error estimate is established. Extensive numerical examples are tested that demonstrate the robustness and flexibility of the method.

  7. Spectral element method for wave propagation on irregular domains

    Indian Academy of Sciences (India)

    Yan Hui Geng

    2018-03-14

    Mar 14, 2018 ... Abstract. A spectral element approximation of acoustic propagation problems combined with a new mapping method on irregular domains is proposed. Following this method, the Gauss–Lobatto–Chebyshev nodes in the standard space are applied to the spectral element method (SEM). The nodes in the ...

  8. Different Element Methods in Engineering Practice | Onah | Nigerian ...

    African Journals Online (AJOL)

    Presented is the most common element methods used for analysis in engineering. The methods are discussed in an overall and general manner so that engineers and scientists who are increasingly, called upon to use element methods to support and check their analyses and/or designs can appreciate the essential ...

  9. Spectral element method for wave propagation on irregular domains

    Indian Academy of Sciences (India)

    A spectral element approximation of acoustic propagation problems combined with a new mapping method on irregular domains is proposed. Following this method, the Gauss–Lobatto–Chebyshev nodes in the standard space are applied to the spectral element method (SEM). The nodes in the physical space are ...

  10. A finite element solution method for quadrics parallel computer

    International Nuclear Information System (INIS)

    Zucchini, A.

    1996-08-01

    A distributed preconditioned conjugate gradient method for finite element analysis has been developed and implemented on a parallel SIMD Quadrics computer. The main characteristic of the method is that it does not require any actual assembling of all element equations in a global system. The physical domain of the problem is partitioned in cells of n p finite elements and each cell element is assigned to a different node of an n p -processors machine. Element stiffness matrices are stored in the data memory of the assigned processing node and the solution process is completely executed in parallel at element level. Inter-element and therefore inter-processor communications are required once per iteration to perform local sums of vector quantities between neighbouring elements. A prototype implementation has been tested on an 8-nodes Quadrics machine in a simple 2D benchmark problem

  11. Transuranium element recovering method for spent nuclear fuel

    International Nuclear Information System (INIS)

    Todokoro, Akio; Kihara, Yoshiyuki; Okada, Hisashi

    1998-01-01

    Spent fuels are dissolved in nitric acid, the obtained dissolution liquid is oxidized by electrolysis, and nitric acid of transuranium elements are precipitated together with nitric acid of uranium elements from the dissolution solution and recovered. Namely, the transuranium elements are oxidized to an atomic value level at which nitric acid can be precipitated by an oxidizing catalyst, and cooled to precipitate nitric acid of transuranium elements together with nitric acid of transuranium elements, accordingly, it is not necessary to use a solvent which has been used so far upon recovering transuranium elements. Since no solvent waste is generated, a recovery method taking the circumstance into consideration can be provided. Further, nitric acid of uranium elements and nitric acid of transuranium elements precipitated and recovered together are dissolved in nitric acid again, cooled and only uranium elements are precipitated selectively, and recovered by filtration. The amount of wastes can be reduced to thereby enabling to mitigate control for processing. (N.H.)

  12. Diode and method of making the same

    Energy Technology Data Exchange (ETDEWEB)

    Dickerson, Jeramy Ray; Wierer, Jr., Jonathan; Kaplar, Robert; Allerman, Andrew A.

    2018-03-13

    A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.

  13. PREFACE: 4th Workshop on Theory, Modelling and Computational Methods for Semiconductors (TMCSIV)

    Science.gov (United States)

    Tomić, Stanko; Probert, Matt; Migliorato, Max; Pal, Joydeep

    2014-06-01

    These conference proceedings contain the written papers of the contributions presented at the 4th International Conference on Theory, Modelling and Computational Methods for Semiconductor materials and nanostructures. The conference was held at the MediaCityUK, University of Salford, Manchester, UK on 22-24 January 2014. The previous conferences in this series took place in 2012 at the University of Leeds, in 2010 at St William's College, York and in 2008 at the University of Manchester, UK. The development of high-performance computer architectures is finally allowing the routine use of accurate methods for calculating the structural, thermodynamic, vibrational, optical and electronic properties of semiconductors and their hetero- and nano-structures. The scope of this conference embraces modelling, theory and the use of sophisticated computational tools in semiconductor science and technology, where there is substantial potential for time-saving in R&D. Theoretical approaches represented in this meeting included: Density Functional Theory, Semi-empirical Electronic Structure Methods, Multi-scale Approaches, Modelling of PV devices, Electron Transport, and Graphene. Topics included, but were not limited to: Optical Properties of Quantum Nanostructures including Colloids and Nanotubes, Plasmonics, Magnetic Semiconductors, Photonic Structures, and Electronic Devices. This workshop ran for three days, with the objective of bringing together UK and international leading experts in the theoretical modelling of Group IV, III-V and II-VI semiconductors, as well as students, postdocs and early-career researchers. The first day focused on providing an introduction and overview of this vast field, aimed particularly at students, with several lectures given by recognized experts in various theoretical approaches. The following two days showcased some of the best theoretical research carried out in the UK in this field, with several contributions also from representatives of

  14. A Summary of the Space-Time Conservation Element and Solution Element (CESE) Method

    Science.gov (United States)

    Wang, Xiao-Yen J.

    2015-01-01

    The space-time Conservation Element and Solution Element (CESE) method for solving conservation laws is examined for its development motivation and design requirements. The characteristics of the resulting scheme are discussed. The discretization of the Euler equations is presented to show readers how to construct a scheme based on the CESE method. The differences and similarities between the CESE method and other traditional methods are discussed. The strengths and weaknesses of the method are also addressed.

  15. Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor sensor device (10) for sensing a substance comprising at least one mesa- shaped semiconductor region (11) which is formed on a surface of a semiconductor body (12) and which is connected at a first end to a first electrically conducting connection region (13)

  16. Research of flaw assessment methods for beryllium reflector elements

    International Nuclear Information System (INIS)

    Shibata, Akira; Ito, Masayasu; Takemoto, Noriyuki; Tanimoto, Masataka; Tsuchiya, Kunihiko; Nakatsuka, Masafumi; Ohara, Hiroshi; Kodama, Mitsuhiro

    2012-02-01

    Reflector elements made from metal beryllium is widely used as neutron reflectors to increase neutron flux in test reactors. When beryllium reflector elements are irradiated by neutron, bending of reflector elements caused by swelling occurs, and beryllium reflector elements must be replaced in several years. In this report, literature search and investigation for non-destructive inspection of Beryllium and experiments for Preliminary inspection to establish post irradiation examination method for research of characteristics of metal beryllium under neutron irradiation were reported. (author)

  17. Effect of Semiconductor Element Substitution on the Electric Properties of Barium Titanate Ceramics

    Directory of Open Access Journals (Sweden)

    Garbarz-Glos B.

    2016-06-01

    Full Text Available The investigated ceramics were prepared by a solid-state reaction from simple oxides and carbonates with the use of a mixed oxide method (MOM. The morphology of BaTi0.96Si0.04O3 (BTSi04 ceramics was characterised by means of a scanning electron microscopy (SEM. It was found that Si+4 ion substitution supported the grain growth process in BT-based ceramics. The EDS results confirmed the high purity and expected quantitative composition of the synthesized material. The dielectric properties of the ceramics were also determined within the temperature range (ΔT=130-500K. It was found that the substitution of Si+4 ions had a significant influence on temperature behavior of the real (ε’ and imaginary (ε” parts of electric permittivity as well as the temperature dependence of a.c. conductivity. Temperature regions of PTCR effect (positive temperature coefficient of resistivity were determined for BTSi04 ceramics in the vicinity of structural phase transitions typical for barium titanate. No distinct maximum indicating a low-temperature structural transition to a rhombohedral phase in BTSi04 was found. The activation energy of conductivity was determined from the Arrhenius plots. It was found that substitution of Si ions in amount of 4wt.% caused almost 50% decrease in an activation energy value.

  18. Thermophysical property of undercooled liquid binary alloy composed of metallic and semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H P; Wei, B, E-mail: bbwei@nwpu.edu.c [Department of Applied Physics, Northwestern Polytechnical University, Xi' an 710072 (China)

    2009-02-07

    The thermophysical properties of the liquid Ni-Si binary alloy system were investigated by the molecular dynamics method. The properties investigated include density, excessive volume, enthalpy, mixing enthalpy and specific heat at both superheated and undercooled states. It is found that the density decreases with an increase in the Si content, and so do the temperature coefficients. If the Si content is smaller than 30%, the density changes linearly with the temperature. If it is larger than 30%, the density is a quadratic function of the temperature. The simulated enthalpies of different composition alloys increase linearly with a rise in temperature. This indicates that the specific heats of Ni-Si alloys change little with temperature. The specific heat versus composition first decreases to a minimum value at 50% Si, then experiences a rise to a maximum value at 90% Si and finally falls again. According to the excessive volume and mixing enthalpy, it can be deduced that the Ni-Si alloy system seriously deviates from the ideal solution. Moreover, a comparison was also performed between the present results and the approximated values by the Neumann-Kopp rule. It reveals that this work provides reasonable data in a broad temperature range, especially for the metastable undercooled liquid state.

  19. Thermophysical property of undercooled liquid binary alloy composed of metallic and semiconductor elements

    Science.gov (United States)

    Wang, H. P.; Wei, B.

    2009-02-01

    The thermophysical properties of the liquid Ni-Si binary alloy system were investigated by the molecular dynamics method. The properties investigated include density, excessive volume, enthalpy, mixing enthalpy and specific heat at both superheated and undercooled states. It is found that the density decreases with an increase in the Si content, and so do the temperature coefficients. If the Si content is smaller than 30%, the density changes linearly with the temperature. If it is larger than 30%, the density is a quadratic function of the temperature. The simulated enthalpies of different composition alloys increase linearly with a rise in temperature. This indicates that the specific heats of Ni-Si alloys change little with temperature. The specific heat versus composition first decreases to a minimum value at 50% Si, then experiences a rise to a maximum value at 90% Si and finally falls again. According to the excessive volume and mixing enthalpy, it can be deduced that the Ni-Si alloy system seriously deviates from the ideal solution. Moreover, a comparison was also performed between the present results and the approximated values by the Neumann-Kopp rule. It reveals that this work provides reasonable data in a broad temperature range, especially for the metastable undercooled liquid state.

  20. Comparison of stress and total energy methods for calculation of elastic properties of semiconductors.

    Science.gov (United States)

    Caro, M A; Schulz, S; O'Reilly, E P

    2013-01-16

    We explore the calculation of the elastic properties of zinc-blende and wurtzite semiconductors using two different approaches: one based on stress and the other on total energy as a function of strain. The calculations are carried out within the framework of density functional theory in the local density approximation, with the plane wave-based package VASP. We use AlN as a test system, with some results also shown for selected other materials (C, Si, GaAs and GaN). Differences are found in convergence rate between the two methods, especially in low symmetry cases, where there is a much slower convergence for total energy calculations with respect to the number of plane waves and k points used. The stress method is observed to be more robust than the total energy method with respect to the residual error in the elastic constants calculated for different strain branches in the systems studied.

  1. Convergence analysis of spectral element method for electromechanical devices

    NARCIS (Netherlands)

    Curti, M.; Jansen, J.W.; Lomonova, E.A.

    2017-01-01

    This paper concerns the comparison of the performance of the Spectral Element Method (SEM) and the Finite Element Method (FEM) for a magnetostatic problem. The convergence of the vector magnetic potential, the magnetic flux density, and the total stored energy in the system is compared with the

  2. Convergence analysis of spectral element method for magnetic devices

    NARCIS (Netherlands)

    Curti, M.; Jansen, J.W.; Lomonova, E.A.

    2018-01-01

    This paper concerns the comparison of the performance of the Spectral Element Method (SEM) and the Finite Element Method (FEM) for modeling a magnetostatic problem. The convergence of the vector magnetic potential, the magnetic flux density, and the total stored energy in the system is compared with

  3. Galerkin finite element methods for wave problems

    Indian Academy of Sciences (India)

    basis functions (called G1FEM here) and quadratic basis functions (called G2FEM) ... mulation of Brookes & Hughes (1982) that implicitly incorporates numerical ..... functions and (c) SUPG method in the (kh − ω t)-plane for explicit Euler.

  4. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  5. Analytical chemistry in semiconductor manufacturing: Techniques, role of nuclear methods and need for quality control

    International Nuclear Information System (INIS)

    1989-06-01

    This report is the result of a consultants meeting held in Gaithersburg, USA, 2-3 October 1987. The meeting was hosted by the National Bureau of Standards and Technology, and it was attended by 18 participants from Denmark, Finland, India, Japan, Norway, People's Republic of China and the USA. The purpose of the meeting was to assess the present status of analytical chemistry in semiconductor manufacturing, the role of nuclear analytical methods and the need for internationally organized quality control of the chemical analysis. The report contains the three presentations in full and a summary report of the discussions. Thus, it gives an overview of the need of analytical chemistry in manufacturing of silicon based devices, the use of nuclear analytical methods, and discusses the need for quality control. Refs, figs and tabs

  6. Semiconductor/metal nanocomposites formed by in situ reduction method in multilayer thin films

    International Nuclear Information System (INIS)

    Song Yanli; Wang Enbo; Tian Chungui; Mao Baodong; Wang Chunlei

    2009-01-01

    A layer-by-layer adsorption and in situ reduction method was adopted for synthesizing semiconductor/metal nanocomposites in multilayer ultra-thin films. Alternate adsorption of ZnO nanoparticles modified with poly(ethyleneimine), hydrogentetrachloroaurate and poly(styrenesulfonate) sodium results in the formation of ZnO/AuCl 4 - -loaded multilayer films. In situ reduction of the incorporated metal ions by heating yields ZnO/Au nanocomposites in the films. UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy were used to characterize the components of the composite films. UV-vis spectra indicate regular growth of the films. The electrochemistry behavior of the multilayer films was studied in detail on indium tin oxide electrode. The combined results suggest that the layer-by-layer adsorption and subsequent reduction method used here provides an effective way to synthesize ZnO/Au nanocomposites in the polymer matrix

  7. Dynamic relaxation method in analysis of reinforced concrete bent elements

    Directory of Open Access Journals (Sweden)

    Anna Szcześniak

    2015-12-01

    Full Text Available The paper presents a method for the analysis of nonlinear behaviour of reinforced concrete bent elements subjected to short-term static load. The considerations in the range of modelling of deformation processes of reinforced concrete element were carried out. The method of structure effort analysis was developed using the finite difference method. The Dynamic Relaxation Method, which — after introduction of critical damping — allows for description of the static behaviour of a structural element, was used to solve the system of nonlinear equilibrium equations. In order to increase the method effectiveness in the range of the post-critical analysis, the Arc Length Parameter on the equilibrium path was introduced into the computational procedure.[b]Keywords[/b]: reinforced concrete elements, physical nonlinearity, geometrical nonlinearity, dynamic relaxation method, arc-length method

  8. Finite element method for solving neutron transport problems

    International Nuclear Information System (INIS)

    Ferguson, J.M.; Greenbaum, A.

    1984-01-01

    A finite element method is introduced for solving the neutron transport equations. Our method falls into the category of Petrov-Galerkin solution, since the trial space differs from the test space. The close relationship between this method and the discrete ordinate method is discussed, and the methods are compared for simple test problems

  9. Hydrothermal analysis in engineering using control volume finite element method

    CERN Document Server

    Sheikholeslami, Mohsen

    2015-01-01

    Control volume finite element methods (CVFEM) bridge the gap between finite difference and finite element methods, using the advantages of both methods for simulation of multi-physics problems in complex geometries. In Hydrothermal Analysis in Engineering Using Control Volume Finite Element Method, CVFEM is covered in detail and applied to key areas of thermal engineering. Examples, exercises, and extensive references are used to show the use of the technique to model key engineering problems such as heat transfer in nanofluids (to enhance performance and compactness of energy systems),

  10. A splitting scheme based on the space-time CE/SE method for solving multi-dimensional hydrodynamical models of semiconductor devices

    Science.gov (United States)

    Nisar, Ubaid Ahmed; Ashraf, Waqas; Qamar, Shamsul

    2016-08-01

    Numerical solutions of the hydrodynamical model of semiconductor devices are presented in one and two-space dimension. The model describes the charge transport in semiconductor devices. Mathematically, the models can be written as a convection-diffusion type system with a right hand side describing the relaxation effects and interaction with a self consistent electric field. The proposed numerical scheme is a splitting scheme based on the conservation element and solution element (CE/SE) method for hyperbolic step, and a semi-implicit scheme for the relaxation step. The numerical results of the suggested scheme are compared with the splitting scheme based on Nessyahu-Tadmor (NT) central scheme for convection step and the same semi-implicit scheme for the relaxation step. The effects of various parameters such as low field mobility, device length, lattice temperature and voltages for one-space dimensional hydrodynamic model are explored to further validate the generic applicability of the CE/SE method for the current model equations. A two dimensional simulation is also performed by CE/SE method for a MESFET device, producing results in good agreement with those obtained by NT-central scheme.

  11. A multigrid solution method for mixed hybrid finite elements

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, W. [Universitaet Augsburg (Germany)

    1996-12-31

    We consider the multigrid solution of linear equations arising within the discretization of elliptic second order boundary value problems of the form by mixed hybrid finite elements. Using the equivalence of mixed hybrid finite elements and non-conforming nodal finite elements, we construct a multigrid scheme for the corresponding non-conforming finite elements, and, by this equivalence, for the mixed hybrid finite elements, following guidelines from Arbogast/Chen. For a rectangular triangulation of the computational domain, this non-conforming schemes are the so-called nodal finite elements. We explicitly construct prolongation and restriction operators for this type of non-conforming finite elements. We discuss the use of plain multigrid and the multilevel-preconditioned cg-method and compare their efficiency in numerical tests.

  12. Coupling of smooth particle hydrodynamics with the finite element method

    International Nuclear Information System (INIS)

    Attaway, S.W.; Heinstein, M.W.; Swegle, J.W.

    1994-01-01

    A gridless technique called smooth particle hydrodynamics (SPH) has been coupled with the transient dynamics finite element code ppercase[pronto]. In this paper, a new weighted residual derivation for the SPH method will be presented, and the methods used to embed SPH within ppercase[pronto] will be outlined. Example SPH ppercase[pronto] calculations will also be presented. One major difficulty associated with the Lagrangian finite element method is modeling materials with no shear strength; for example, gases, fluids and explosive biproducts. Typically, these materials can be modeled for only a short time with a Lagrangian finite element code. Large distortions cause tangling of the mesh, which will eventually lead to numerical difficulties, such as negative element area or ''bow tie'' elements. Remeshing will allow the problem to continue for a short while, but the large distortions can prevent a complete analysis. SPH is a gridless Lagrangian technique. Requiring no mesh, SPH has the potential to model material fracture, large shear flows and penetration. SPH computes the strain rate and the stress divergence based on the nearest neighbors of a particle, which are determined using an efficient particle-sorting technique. Embedding the SPH method within ppercase[pronto] allows part of the problem to be modeled with quadrilateral finite elements, while other parts are modeled with the gridless SPH method. SPH elements are coupled to the quadrilateral elements through a contact-like algorithm. ((orig.))

  13. Two-dimensional isostatic meshes in the finite element method

    OpenAIRE

    Martínez Marín, Rubén; Samartín, Avelino

    2002-01-01

    In a Finite Element (FE) analysis of elastic solids several items are usually considered, namely, type and shape of the elements, number of nodes per element, node positions, FE mesh, total number of degrees of freedom (dot) among others. In this paper a method to improve a given FE mesh used for a particular analysis is described. For the improvement criterion different objective functions have been chosen (Total potential energy and Average quadratic error) and the number of nodes and dof's...

  14. General Method for Calculating the Response and Noise Spectra of Active Fabry-Perot Semiconductor Waveguides With External Optical Injection

    DEFF Research Database (Denmark)

    Blaaberg, Søren; Mørk, Jesper

    2009-01-01

    We present a theoretical method for calculating small-signal modulation responses and noise spectra of active Fabry-Perot semiconductor waveguides with external light injection. Small-signal responses due to either a modulation of the pump current or due to an optical amplitude or phase modulatio...... amplifiers and an injection-locked laser. We also demonstrate the applicability of the method to analyze slow and fast light effects in semiconductor waveguides. Finite reflectivities of the facets are found to influence the phase changes of the injected microwave-modulated light....

  15. Element Free Lattice Boltzmann Method for Fluid-Flow Problems

    International Nuclear Information System (INIS)

    Jo, Jong Chull; Roh, Kyung Wan; Yune, Young Gill; Kim, Hho Jhung; Kwon, Young Kwon

    2007-01-01

    The Lattice Boltzmann Method (LBM) has been developed for application to thermal-fluid problems. Most of the those studies considered a regular shape of lattice or mesh like square and cubic grids. In order to apply the LBM to more practical cases, it is necessary to be able to solve complex or irregular shapes of problem domains. Some techniques were based on the finite element method. Generally, the finite element method is very powerful for solving two or three-dimensional complex or irregular shapes of domains using the iso-parametric element formulation which is based on a mathematical mapping from a regular shape of element in an imaginary domain to a more general and irregular shape of element in the physical domain. In addition, the element free technique is also quite useful to analyze a complex shape of domain because there is no need to divide a domain by a compatible finite element mesh. This paper presents a new finite element and element free formulations for the lattice Boltzmann equation using the general weighted residual technique. Then, a series of validation examples are presented

  16. Element Free Lattice Boltzmann Method for Fluid-Flow Problems

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Jong Chull; Roh, Kyung Wan; Yune, Young Gill; Kim, Hho Jhung [Korea Institute of Nuclear Safety, Daejeon (Korea, Republic of); Kwon, Young Kwon [US Naval Postgraduate School, New York (United States)

    2007-10-15

    The Lattice Boltzmann Method (LBM) has been developed for application to thermal-fluid problems. Most of the those studies considered a regular shape of lattice or mesh like square and cubic grids. In order to apply the LBM to more practical cases, it is necessary to be able to solve complex or irregular shapes of problem domains. Some techniques were based on the finite element method. Generally, the finite element method is very powerful for solving two or three-dimensional complex or irregular shapes of domains using the iso-parametric element formulation which is based on a mathematical mapping from a regular shape of element in an imaginary domain to a more general and irregular shape of element in the physical domain. In addition, the element free technique is also quite useful to analyze a complex shape of domain because there is no need to divide a domain by a compatible finite element mesh. This paper presents a new finite element and element free formulations for the lattice Boltzmann equation using the general weighted residual technique. Then, a series of validation examples are presented.

  17. A new computational method for simulation of charge transport in semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Holban, I.

    1993-01-01

    An effective computational method for simulation of charge transport in semiconductor radiation detectors is the purpose of the present work. Basic equations for analysis include (1) Poisson's equations, (2) continuity equation for electrons and holes, (3) rate equations for deep levels, (4) current equation for electrons and holes and (5) boundary conditions. The system of equations is discretized and equidistant space and time grids is brought. The nonlinearity of the problem is overcome by using Newton-Raphson iteration scheme. Instead of solving a nonlinear boundary problem we resolve a linear matrix equation. Our computation procedure becomes very efficient using a sparse matrix. The computed program allows to calculate the charge collection efficiency and transient response for arbitrary electric fields when trapping and detrapping effects are present. The earlier literature results are reproduced. (Author)

  18. System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

    Science.gov (United States)

    Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

    2013-10-22

    A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

  19. Finite element formulation for a digital image correlation method

    International Nuclear Information System (INIS)

    Sun Yaofeng; Pang, John H. L.; Wong, Chee Khuen; Su Fei

    2005-01-01

    A finite element formulation for a digital image correlation method is presented that will determine directly the complete, two-dimensional displacement field during the image correlation process on digital images. The entire interested image area is discretized into finite elements that are involved in the common image correlation process by use of our algorithms. This image correlation method with finite element formulation has an advantage over subset-based image correlation methods because it satisfies the requirements of displacement continuity and derivative continuity among elements on images. Numerical studies and a real experiment are used to verify the proposed formulation. Results have shown that the image correlation with the finite element formulation is computationally efficient, accurate, and robust

  20. A Method of Assembling Wall or Floor Elements

    DEFF Research Database (Denmark)

    2002-01-01

    The invention relates to a method of constructing, at the site of use, a building wall (1) or a building floor (1) using a plurality of prefabricated concrete or lightweight concrete plate-shaped wall of floor elements (10), in particular cast elements, which have a front side and a rear side...

  1. Stability estimates for hp spectral element methods for general ...

    Indian Academy of Sciences (India)

    We establish basic stability estimates for a non-conforming ℎ- spectral element method which allows for simultaneous mesh refinement and variable polynomial degree. The spectral element functions are non-conforming if the boundary conditions are Dirichlet. For problems with mixed boundary conditions they are ...

  2. A Note on Symplectic, Multisymplectic Scheme in Finite Element Method

    Institute of Scientific and Technical Information of China (English)

    GUO Han-Ying; JI Xiao-Mei; LI Yu-Qi; WU Ke

    2001-01-01

    We find that with uniform mesh, the numerical schemes derived from finite element method can keep a preserved symplectic structure in one-dimensional case and a preserved multisymplectic structure in two-dimensional case respectively. These results are in fact the intrinsic reason why the numerical experiments show that such finite element algorithms are accurate in practice.``

  3. THE PRACTICAL ANALYSIS OF FINITE ELEMENTS METHOD ERRORS

    Directory of Open Access Journals (Sweden)

    Natalia Bakhova

    2011-03-01

    Full Text Available Abstract. The most important in the practical plan questions of reliable estimations of finite elementsmethod errors are considered. Definition rules of necessary calculations accuracy are developed. Methodsand ways of the calculations allowing receiving at economical expenditures of computing work the best finalresults are offered.Keywords: error, given the accuracy, finite element method, lagrangian and hermitian elements.

  4. A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation.

    Science.gov (United States)

    Rupp, K; Jungemann, C; Hong, S-M; Bina, M; Grasser, T; Jüngel, A

    The Boltzmann transport equation is commonly considered to be the best semi-classical description of carrier transport in semiconductors, providing precise information about the distribution of carriers with respect to time (one dimension), location (three dimensions), and momentum (three dimensions). However, numerical solutions for the seven-dimensional carrier distribution functions are very demanding. The most common solution approach is the stochastic Monte Carlo method, because the gigabytes of memory requirements of deterministic direct solution approaches has not been available until recently. As a remedy, the higher accuracy provided by solutions of the Boltzmann transport equation is often exchanged for lower computational expense by using simpler models based on macroscopic quantities such as carrier density and mean carrier velocity. Recent developments for the deterministic spherical harmonics expansion method have reduced the computational cost for solving the Boltzmann transport equation, enabling the computation of carrier distribution functions even for spatially three-dimensional device simulations within minutes to hours. We summarize recent progress for the spherical harmonics expansion method and show that small currents, reasonable execution times, and rare events such as low-frequency noise, which are all hard or even impossible to simulate with the established Monte Carlo method, can be handled in a straight-forward manner. The applicability of the method for important practical applications is demonstrated for noise simulation, small-signal analysis, hot-carrier degradation, and avalanche breakdown.

  5. Generalized multiscale finite element method. Symmetric interior penalty coupling

    KAUST Repository

    Efendiev, Yalchin R.; Galvis, Juan; Lazarov, Raytcho D.; Moon, M.; Sarkis, Marcus V.

    2013-01-01

    Motivated by applications to numerical simulations of flows in highly heterogeneous porous media, we develop multiscale finite element methods for second order elliptic equations. We discuss a multiscale model reduction technique in the framework of the discontinuous Galerkin finite element method. We propose two different finite element spaces on the coarse mesh. The first space is based on a local eigenvalue problem that uses an interior weighted L2-norm and a boundary weighted L2-norm for computing the "mass" matrix. The second choice is based on generation of a snapshot space and subsequent selection of a subspace of a reduced dimension. The approximation with these multiscale spaces is based on the discontinuous Galerkin finite element method framework. We investigate the stability and derive error estimates for the methods and further experimentally study their performance on a representative number of numerical examples. © 2013 Elsevier Inc.

  6. Generalized multiscale finite element method. Symmetric interior penalty coupling

    KAUST Repository

    Efendiev, Yalchin R.

    2013-12-01

    Motivated by applications to numerical simulations of flows in highly heterogeneous porous media, we develop multiscale finite element methods for second order elliptic equations. We discuss a multiscale model reduction technique in the framework of the discontinuous Galerkin finite element method. We propose two different finite element spaces on the coarse mesh. The first space is based on a local eigenvalue problem that uses an interior weighted L2-norm and a boundary weighted L2-norm for computing the "mass" matrix. The second choice is based on generation of a snapshot space and subsequent selection of a subspace of a reduced dimension. The approximation with these multiscale spaces is based on the discontinuous Galerkin finite element method framework. We investigate the stability and derive error estimates for the methods and further experimentally study their performance on a representative number of numerical examples. © 2013 Elsevier Inc.

  7. Comparison of different precondtioners for nonsymmtric finite volume element methods

    Energy Technology Data Exchange (ETDEWEB)

    Mishev, I.D.

    1996-12-31

    We consider a few different preconditioners for the linear systems arising from the discretization of 3-D convection-diffusion problems with the finite volume element method. Their theoretical and computational convergence rates are compared and discussed.

  8. Review of Tomographic Imaging using Finite Element Method

    Directory of Open Access Journals (Sweden)

    Mohd Fua’ad RAHMAT

    2011-12-01

    Full Text Available Many types of techniques for process tomography were proposed and developed during the past 20 years. This paper review the techniques and the current state of knowledge and experience on the subject, aimed at highlighting the problems associated with the non finite element methods, such as the ill posed, ill conditioned which relates to the accuracy and sensitivity of measurements. In this paper, considerations for choice of sensors and its applications were outlined and descriptions of non finite element tomography systems were presented. The finite element method tomography system as obtained from recent works, suitable for process control and measurement were also presented.

  9. Linearized self-consistent quasiparticle GW method: Application to semiconductors and simple metals

    International Nuclear Information System (INIS)

    Kutepov, A. L.

    2017-01-01

    We present a code implementing the linearized self-consistent quasiparticle GW method (QSGW) in the LAPW basis. Our approach is based on the linearization of the self-energy around zero frequency which differs it from the existing implementations of the QSGW method. The linearization allows us to use Matsubara frequencies instead of working on the real axis. This results in efficiency gains by switching to the imaginary time representation in the same way as in the space time method. The all electron LAPW basis set eliminates the need for pseudopotentials. We discuss the advantages of our approach, such as its N 3 scaling with the system size N, as well as its shortcomings. We apply our approach to study the electronic properties of selected semiconductors, insulators, and simple metals and show that our code produces the results very close to the previously published QSGW data. Our implementation is a good platform for further many body diagrammatic resummations such as the vertex-corrected GW approach and the GW+DMFT method.

  10. Spectral/ hp element methods: Recent developments, applications, and perspectives

    Science.gov (United States)

    Xu, Hui; Cantwell, Chris D.; Monteserin, Carlos; Eskilsson, Claes; Engsig-Karup, Allan P.; Sherwin, Spencer J.

    2018-02-01

    The spectral/ hp element method combines the geometric flexibility of the classical h-type finite element technique with the desirable numerical properties of spectral methods, employing high-degree piecewise polynomial basis functions on coarse finite element-type meshes. The spatial approximation is based upon orthogonal polynomials, such as Legendre or Chebychev polynomials, modified to accommodate a C 0 - continuous expansion. Computationally and theoretically, by increasing the polynomial order p, high-precision solutions and fast convergence can be obtained and, in particular, under certain regularity assumptions an exponential reduction in approximation error between numerical and exact solutions can be achieved. This method has now been applied in many simulation studies of both fundamental and practical engineering flows. This paper briefly describes the formulation of the spectral/ hp element method and provides an overview of its application to computational fluid dynamics. In particular, it focuses on the use of the spectral/ hp element method in transitional flows and ocean engineering. Finally, some of the major challenges to be overcome in order to use the spectral/ hp element method in more complex science and engineering applications are discussed.

  11. Review of the experimental results on impurity centers in elemental semiconductors obtained by μSR and other techniques

    International Nuclear Information System (INIS)

    Estle, T.L.

    1980-01-01

    Selected electron paramagnetic resonance studies of defect centers in group IV semiconductors are reviewed. Features of this research which are useful in analyzing the nature of normal and anomalous muonium (Mu and Mu*) in these crystals are pointed out, and a moderately specific model of Mu and Mu* is presented and compared to studies of hydrogen in silicon and germanium

  12. Accumulation of trace elements used in semiconductor industry in Formosan squirrel, as a bio-indicator of their exposure, living in Taiwan.

    Science.gov (United States)

    Suzuki, Yoshinari; Watanabe, Izumi; Oshida, Tatsuo; Chen, Yen-Jean; Lin, Liang-Kong; Wang, Yu-Huang; Yang, Kouh-Cheng; Kuno, Katsuji

    2007-07-01

    Concentrations of 17 trace elements were analyzed using inductively coupled plasma-mass spectrometry (ICP-MS) in Formosan squirrels (Callosciurus erythraeus) of Taiwan and Japan to document trace element pollution in Taiwan. High concentrations of elements used to produce semiconductors - Ga, As, Cd, In and Tl - were found in animals captured in Miaoli County, which is the nearest site to Hsinchu City, a chief city of Taiwan's semiconductor industry. Significant correlations between Ga, As, In and Tl were found in the kidney, liver, lung and muscle tissues of Taiwanese squirrels. Hierarchical cluster analysis indicated that Ga, As, In and Tl were of the same clade, indicating that Ga, As, In and Tl were discharged from an identical origin. Molar ratios of Ga/As concentration in lungs of animals captured in Miaoli resembled those of animals after intratracheal administration of particulate gallium arsenide (GaAs). This result might indicate that the higher concentrations of Ga and As in the specimens in Miaoli resulted from atmospheric exposure to GaAs.

  13. Analysis of concrete beams using applied element method

    Science.gov (United States)

    Lincy Christy, D.; Madhavan Pillai, T. M.; Nagarajan, Praveen

    2018-03-01

    The Applied Element Method (AEM) is a displacement based method of structural analysis. Some of its features are similar to that of Finite Element Method (FEM). In AEM, the structure is analysed by dividing it into several elements similar to FEM. But, in AEM, elements are connected by springs instead of nodes as in the case of FEM. In this paper, background to AEM is discussed and necessary equations are derived. For illustrating the application of AEM, it has been used to analyse plain concrete beam of fixed support condition. The analysis is limited to the analysis of 2-dimensional structures. It was found that the number of springs has no much influence on the results. AEM could predict deflection and reactions with reasonable degree of accuracy.

  14. Linear finite element method for one-dimensional diffusion problems

    Energy Technology Data Exchange (ETDEWEB)

    Brandao, Michele A.; Dominguez, Dany S.; Iglesias, Susana M., E-mail: micheleabrandao@gmail.com, E-mail: dany@labbi.uesc.br, E-mail: smiglesias@uesc.br [Universidade Estadual de Santa Cruz (LCC/DCET/UESC), Ilheus, BA (Brazil). Departamento de Ciencias Exatas e Tecnologicas. Laboratorio de Computacao Cientifica

    2011-07-01

    We describe in this paper the fundamentals of Linear Finite Element Method (LFEM) applied to one-speed diffusion problems in slab geometry. We present the mathematical formulation to solve eigenvalue and fixed source problems. First, we discretized a calculus domain using a finite set of elements. At this point, we obtain the spatial balance equations for zero order and first order spatial moments inside each element. Then, we introduce the linear auxiliary equations to approximate neutron flux and current inside the element and architect a numerical scheme to obtain the solution. We offer numerical results for fixed source typical model problems to illustrate the method's accuracy for coarse-mesh calculations in homogeneous and heterogeneous domains. Also, we compare the accuracy and computational performance of LFEM formulation with conventional Finite Difference Method (FDM). (author)

  15. NUMERICAL METHOD OF MIXED FINITE VOLUME-MODIFIED UPWIND FRACTIONAL STEP DIFFERENCE FOR THREE-DIMENSIONAL SEMICONDUCTOR DEVICE TRANSIENT BEHAVIOR PROBLEMS

    Institute of Scientific and Technical Information of China (English)

    Yirang YUAN; Qing YANG; Changfeng LI; Tongjun SUN

    2017-01-01

    Transient behavior of three-dimensional semiconductor device with heat conduction is described by a coupled mathematical system of four quasi-linear partial differential equations with initial-boundary value conditions.The electric potential is defined by an elliptic equation and it appears in the following three equations via the electric field intensity.The electron concentration and the hole concentration are determined by convection-dominated diffusion equations and the temperature is interpreted by a heat conduction equation.A mixed finite volume element approximation,keeping physical conservation law,is used to get numerical values of the electric potential and the accuracy is improved one order.Two concentrations and the heat conduction are computed by a fractional step method combined with second-order upwind differences.This method can overcome numerical oscillation,dispersion and decreases computational complexity.Then a three-dimensional problem is solved by computing three successive one-dimensional problems where the method of speedup is used and the computational work is greatly shortened.An optimal second-order error estimate in L2 norm is derived by using prior estimate theory and other special techniques of partial differential equations.This type of mass-conservative parallel method is important and is most valuable in numerical analysis and application of semiconductor device.

  16. The Matrix Element Method at Next-to-Leading Order

    OpenAIRE

    Campbell, John M.; Giele, Walter T.; Williams, Ciaran

    2012-01-01

    This paper presents an extension of the matrix element method to next-to-leading order in perturbation theory. To accomplish this we have developed a method to calculate next-to-leading order weights on an event-by-event basis. This allows for the definition of next-to-leading order likelihoods in exactly the same fashion as at leading order, thus extending the matrix element method to next-to-leading order. A welcome by-product of the method is the straightforward and efficient generation of...

  17. Linearized self-consistent quasiparticle GW method: Application to semiconductors and simple metals

    Science.gov (United States)

    Kutepov, A. L.; Oudovenko, V. S.; Kotliar, G.

    2017-10-01

    We present a code implementing the linearized quasiparticle self-consistent GW method (LQSGW) in the LAPW basis. Our approach is based on the linearization of the self-energy around zero frequency which differs it from the existing implementations of the QSGW method. The linearization allows us to use Matsubara frequencies instead of working on the real axis. This results in efficiency gains by switching to the imaginary time representation in the same way as in the space time method. The all electron LAPW basis set eliminates the need for pseudopotentials. We discuss the advantages of our approach, such as its N3 scaling with the system size N, as well as its shortcomings. We apply our approach to study the electronic properties of selected semiconductors, insulators, and simple metals and show that our code produces the results very close to the previously published QSGW data. Our implementation is a good platform for further many body diagrammatic resummations such as the vertex-corrected GW approach and the GW+DMFT method. Program Files doi:http://dx.doi.org/10.17632/cpchkfty4w.1 Licensing provisions: GNU General Public License Programming language: Fortran 90 External routines/libraries: BLAS, LAPACK, MPI (optional) Nature of problem: Direct implementation of the GW method scales as N4 with the system size, which quickly becomes prohibitively time consuming even in the modern computers. Solution method: We implemented the GW approach using a method that switches between real space and momentum space representations. Some operations are faster in real space, whereas others are more computationally efficient in the reciprocal space. This makes our approach scale as N3. Restrictions: The limiting factor is usually the memory available in a computer. Using 10 GB/core of memory allows us to study the systems up to 15 atoms per unit cell.

  18. Numerical experiment on finite element method for matching data

    International Nuclear Information System (INIS)

    Tokuda, Shinji; Kumakura, Toshimasa; Yoshimura, Koichi.

    1993-03-01

    Numerical experiments are presented on the finite element method by Pletzer-Dewar for matching data of an ordinary differential equation with regular singular points by using model equation. Matching data play an important role in nonideal MHD stability analysis of a magnetically confined plasma. In the Pletzer-Dewar method, the Frobenius series for the 'big solution', the fundamental solution which is not square-integrable at the regular singular point, is prescribed. The experiments include studies of the convergence rate of the matching data obtained by the finite element method and of the effect on the results of computation by truncating the Frobenius series at finite terms. It is shown from the present study that the finite element method is an effective method for obtaining the matching data with high accuracy. (author)

  19. Precise magnetostatic field using the finite element method

    International Nuclear Information System (INIS)

    Nascimento, Francisco Rogerio Teixeira do

    2013-01-01

    The main objective of this work is to simulate electromagnetic fields using the Finite Element Method. Even in the easiest case of electrostatic and magnetostatic numerical simulation some problems appear when the nodal finite element is used. It is difficult to model vector fields with scalar functions mainly in non-homogeneous materials. With the aim to solve these problems two types of techniques are tried: the adaptive remeshing using nodal elements and the edge finite element that ensure the continuity of tangential components. Some numerical analysis of simple electromagnetic problems with homogeneous and non-homogeneous materials are performed using first, the adaptive remeshing based in various error indicators and second, the numerical solution of waveguides using edge finite element. (author)

  20. Synthesis of superheavy elements and application of nuclear physics methods in related fields

    International Nuclear Information System (INIS)

    Flerov, G.

    1985-01-01

    Heavy ion accelerators are used not only for the synthesis of new elements but also for the production of nuclear filters from polymers. The principle is described of the manufacture of such filters, and their chemical processing. By changes in irradiation conditions and in conditions of chemical leaching, nuclear filters may be obtained of various density, shape and size of pores and with a different angular distribution of tracks in the polymer material. The most frequently used polymer is polyethylene terephthalate film. The uses are described of nuclear filters, such as water treatment in the production of semiconductor instruments, in cryogenic instruments, in the purification concentration and sterilization filtration of viruses and vaccines, etc. Other uses of heavy ion beams are suggested, such as the method of nuclear tracks, the manufacture of membranes with a single opening, the manufacture of laser diaphragms, lithography, etc. (E.S.)

  1. Complex finite element sensitivity method for creep analysis

    International Nuclear Information System (INIS)

    Gomez-Farias, Armando; Montoya, Arturo; Millwater, Harry

    2015-01-01

    The complex finite element method (ZFEM) has been extended to perform sensitivity analysis for mechanical and structural systems undergoing creep deformation. ZFEM uses a complex finite element formulation to provide shape, material, and loading derivatives of the system response, providing an insight into the essential factors which control the behavior of the system as a function of time. A complex variable-based quadrilateral user element (UEL) subroutine implementing the power law creep constitutive formulation was incorporated within the Abaqus commercial finite element software. The results of the complex finite element computations were verified by comparing them to the reference solution for the steady-state creep problem of a thick-walled cylinder in the power law creep range. A practical application of the ZFEM implementation to creep deformation analysis is the calculation of the skeletal point of a notched bar test from a single ZFEM run. In contrast, the standard finite element procedure requires multiple runs. The value of the skeletal point is that it identifies the location where the stress state is accurate, regardless of the certainty of the creep material properties. - Highlights: • A novel finite element sensitivity method (ZFEM) for creep was introduced. • ZFEM has the capability to calculate accurate partial derivatives. • ZFEM can be used for identification of the skeletal point of creep structures. • ZFEM can be easily implemented in a commercial software, e.g. Abaqus. • ZFEM results were shown to be in excellent agreement with analytical solutions

  2. Method of removing crud deposited on fuel element clusters

    International Nuclear Information System (INIS)

    Yokota, Tokunobu; Yashima, Akira; Tajima, Jun-ichiro.

    1982-01-01

    Purpose: To enable easy elimination of claddings deposited on the surface of fuel element. Method: An operator manipulates a pole from above a platform, engages the longitudinal flange of the cover to the opening at the upper end of a channel box and starts up a suction pump. The suction amount of the pump is set such that water flow becomes within the channel box at greater flow rate than the operational flow rate in the channel box of the fuel element clusters during reactor operation. This enables to remove crud deposited on the surface of individual fuel elements with ease and rapidly without detaching the channel box. (Moriyama, K.)

  3. A finite element conjugate gradient FFT method for scattering

    Science.gov (United States)

    Collins, Jeffery D.; Ross, Dan; Jin, J.-M.; Chatterjee, A.; Volakis, John L.

    1991-01-01

    Validated results are presented for the new 3D body of revolution finite element boundary integral code. A Fourier series expansion of the vector electric and mangnetic fields is employed to reduce the dimensionality of the system, and the exact boundary condition is employed to terminate the finite element mesh. The mesh termination boundary is chosen such that is leads to convolutional boundary operatores of low O(n) memory demand. Improvements of this code are discussed along with the proposed formulation for a full 3D implementation of the finite element boundary integral method in conjunction with a conjugate gradiant fast Fourier transformation (CGFFT) solution.

  4. Scalable fast multipole methods for vortex element methods

    KAUST Repository

    Hu, Qi; Gumerov, Nail A.; Yokota, Rio; Barba, Lorena A.; Duraiswami, Ramani

    2012-01-01

    work for a scalar heterogeneous FMM algorithm, we develop a new FMM-based vortex method capable of simulating general flows including turbulence on heterogeneous architectures, which distributes the work between multi-core CPUs and GPUs to best utilize

  5. Finite element and discontinuous Galerkin methods for transient wave equations

    CERN Document Server

    Cohen, Gary

    2017-01-01

    This monograph presents numerical methods for solving transient wave equations (i.e. in time domain). More precisely, it provides an overview of continuous and discontinuous finite element methods for these equations, including their implementation in physical models, an extensive description of 2D and 3D elements with different shapes, such as prisms or pyramids, an analysis of the accuracy of the methods and the study of the Maxwell’s system and the important problem of its spurious free approximations. After recalling the classical models, i.e. acoustics, linear elastodynamics and electromagnetism and their variational formulations, the authors present a wide variety of finite elements of different shapes useful for the numerical resolution of wave equations. Then, they focus on the construction of efficient continuous and discontinuous Galerkin methods and study their accuracy by plane wave techniques and a priori error estimates. A chapter is devoted to the Maxwell’s system and the important problem ...

  6. Analysis of Piezoelectric Solids using Finite Element Method

    Science.gov (United States)

    Aslam, Mohammed; Nagarajan, Praveen; Remanan, Mini

    2018-03-01

    Piezoelectric materials are extensively used in smart structures as sensors and actuators. In this paper, static analysis of three piezoelectric solids is done using general-purpose finite element software, Abaqus. The simulation results from Abaqus are compared with the results obtained using numerical methods like Boundary Element Method (BEM) and meshless point collocation method (PCM). The BEM and PCM are cumbersome for complex shape and complicated boundary conditions. This paper shows that the software Abaqus can be used to solve the governing equations of piezoelectric solids in a much simpler and faster way than the BEM and PCM.

  7. Navier-Stokes equations by the finite element method

    International Nuclear Information System (INIS)

    Portella, P.E.

    1984-01-01

    A computer program to solve the Navier-Stokes equations by using the Finite Element Method is implemented. The solutions variables investigated are stream-function/vorticity in the steady case and velocity/pressure in the steady state and transient cases. For steady state flow the equations are solved simultaneously by the Newton-Raphson method. For the time dependent formulation, a fractional step method is employed to discretize in time and artificial viscosity is used to preclude spurious oscilations in the solution. The element used is the three node triangle. Some numerical examples are presented and comparisons are made with applications already existent. (Author) [pt

  8. Nucleon matrix elements using the variational method in lattice QCD

    International Nuclear Information System (INIS)

    Dragos, J.; Kamleh, W.; Leinweber, D.B.; Zanotti, J.M.; Rakow, P.E.L.; Young, R.D.; Adelaide Univ., SA

    2016-06-01

    The extraction of hadron matrix elements in lattice QCD using the standard two- and threepoint correlator functions demands careful attention to systematic uncertainties. One of the most commonly studied sources of systematic error is contamination from excited states. We apply the variational method to calculate the axial vector current g_A, the scalar current g_S and the quark momentum fraction left angle x right angle of the nucleon and we compare the results to the more commonly used summation and two-exponential fit methods. The results demonstrate that the variational approach offers a more efficient and robust method for the determination of nucleon matrix elements.

  9. Mathematical aspects of finite element methods for incompressible viscous flows

    Science.gov (United States)

    Gunzburger, M. D.

    1986-01-01

    Mathematical aspects of finite element methods are surveyed for incompressible viscous flows, concentrating on the steady primitive variable formulation. The discretization of a weak formulation of the Navier-Stokes equations are addressed, then the stability condition is considered, the satisfaction of which insures the stability of the approximation. Specific choices of finite element spaces for the velocity and pressure are then discussed. Finally, the connection between different weak formulations and a variety of boundary conditions is explored.

  10. Method for fuel element leak detection in pressurized water reactors

    International Nuclear Information System (INIS)

    Kunze, U.

    1983-01-01

    The method is aimed at detecting fuel element leaks during reactor operation. It is based on neutron flux measurements at many points in the core, using at least two detectors at a time. The detectors must be arranged in the direction of the coolant flow. Values obtained from periodic measurements are compared with threshold values. The location of fuel element leaks is determined from those values exceeding the threshold of individual detectors

  11. Principle and application of low energy inverse photoemission spectroscopy: A new method for measuring unoccupied states of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Yoshida, Hiroyuki, E-mail: hyoshida@chiba-u.jp

    2015-10-01

    Highlights: • Principle of low energy inverse photoemission spectroscopy is described. • Instruments including electron sources and photon detectors are shown. • Recent results about organic devices and fundamental studies are reviewed. • Electron affinities of typical organic semiconductors are compiled. - Abstract: Information about the unoccupied states is crucial to both fundamental and applied physics of organic semiconductors. However, there were no available experimental methods that meet the requirement of such research. In this review, we describe a new experimental method to examine the unoccupied states, called low-energy inverse photoemission spectroscopy (LEIPS). An electron having the kinetic energy lower than the damage threshold of organic molecules is introduced to a sample film, and an emitted photon in the near-ultraviolet range is detected with high resolution and sensitivity. Unlike the previous inverse photoemission spectroscopy, the sample damage is negligible and the overall resolution is a factor of two improved to 0.25 eV. Using LEIPS, electron affinity of organic semiconductor can be determined with the same precision as photoemission spectroscopy for ionization energy. The instruments including an electron source and photon detectors as well as application to organic semiconductors are presented.

  12. Principle and application of low energy inverse photoemission spectroscopy: A new method for measuring unoccupied states of organic semiconductors

    International Nuclear Information System (INIS)

    Yoshida, Hiroyuki

    2015-01-01

    Highlights: • Principle of low energy inverse photoemission spectroscopy is described. • Instruments including electron sources and photon detectors are shown. • Recent results about organic devices and fundamental studies are reviewed. • Electron affinities of typical organic semiconductors are compiled. - Abstract: Information about the unoccupied states is crucial to both fundamental and applied physics of organic semiconductors. However, there were no available experimental methods that meet the requirement of such research. In this review, we describe a new experimental method to examine the unoccupied states, called low-energy inverse photoemission spectroscopy (LEIPS). An electron having the kinetic energy lower than the damage threshold of organic molecules is introduced to a sample film, and an emitted photon in the near-ultraviolet range is detected with high resolution and sensitivity. Unlike the previous inverse photoemission spectroscopy, the sample damage is negligible and the overall resolution is a factor of two improved to 0.25 eV. Using LEIPS, electron affinity of organic semiconductor can be determined with the same precision as photoemission spectroscopy for ionization energy. The instruments including an electron source and photon detectors as well as application to organic semiconductors are presented.

  13. Nonlinear nonstationary analysis with the finite element method

    International Nuclear Information System (INIS)

    Vaz, L.E.

    1981-01-01

    In this paper, after some introductory remarks on numerical methods for the integration of initial value problems, the applicability of the finite element method for transient diffusion analysis as well as dynamic and inelastic analysis is discussed, and some examples are presented. (RW) [de

  14. The future of the finite element method in geotechnics

    NARCIS (Netherlands)

    Brinkgreve, R.B.J.

    2012-01-01

    In this presentation a vision is given on tlie fiiture of the finite element method (FEM) for geotechnical engineering and design. In the past 20 years the FEM has proven to be a powerful method for estimating deformation, stability and groundwater flow in geoteclmical stmctures. Much has been

  15. Discontinuous Galerkin finite element methods for hyperbolic differential equations

    NARCIS (Netherlands)

    van der Vegt, Jacobus J.W.; van der Ven, H.; Boelens, O.J.; Boelens, O.J.; Toro, E.F.

    2002-01-01

    In this paper a suryey is given of the important steps in the development of discontinuous Galerkin finite element methods for hyperbolic partial differential equations. Special attention is paid to the application of the discontinuous Galerkin method to the solution of the Euler equations of gas

  16. Instrumental methods for analysis of some elements in flour

    International Nuclear Information System (INIS)

    Zagrodzki, P.; Dutkiewicz, E.M.; Malec, P.; Krosniak, M.; Knap, W.

    1993-10-01

    For ten various brands of flour contents of chosen (heavy) elements were determined by means of ICP, GF-AAS, PIXE and ASV/CSV methods. General performance of participating laboratories as well as pros and cons of different analytical methods were compared and discussed. (author). 6 refs, 6 figs, 7 tabs

  17. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  18. Selenopeptides and elemental selenium in Thunbergia alata after exposure to selenite: quantification method for elemental selenium.

    Science.gov (United States)

    Aborode, Fatai Adigun; Raab, Andrea; Foster, Simon; Lombi, Enzo; Maher, William; Krupp, Eva M; Feldmann, Joerg

    2015-07-01

    Three month old Thunbergia alata were exposed for 13 days to 10 μM selenite to determine the biotransformation of selenite in their roots. Selenium in formic acid extracts (80 ± 3%) was present as selenopeptides with Se-S bonds and selenium-PC complexes (selenocysteinyl-2-3-dihydroxypropionyl-glutathione, seleno-phytochelatin2, seleno-di-glutathione). An analytical method using HPLC-ICPMS to detect and quantify elemental selenium in roots of T. alata plants using sodium sulfite to quantitatively transform elemental selenium to selenosulfate was also developed. Elemental selenium was determined as 18 ± 4% of the total selenium in the roots which was equivalent to the selenium not extracted using formic acid extraction. The results are in an agreement with the XAS measurements of the exposed roots which showed no occurrence of selenite or selenate but a mixture of selenocysteine and elemental selenium.

  19. Scalable fast multipole methods for vortex element methods

    KAUST Repository

    Hu, Qi

    2012-11-01

    We use a particle-based method to simulate incompressible flows, where the Fast Multipole Method (FMM) is used to accelerate the calculation of particle interactions. The most time-consuming kernelsâ\\'the Biot-Savart equation and stretching term of the vorticity equationâ\\'are mathematically reformulated so that only two Laplace scalar potentials are used instead of six, while automatically ensuring divergence-free far-field computation. Based on this formulation, and on our previous work for a scalar heterogeneous FMM algorithm, we develop a new FMM-based vortex method capable of simulating general flows including turbulence on heterogeneous architectures, which distributes the work between multi-core CPUs and GPUs to best utilize the hardware resources and achieve excellent scalability. The algorithm also uses new data structures which can dynamically manage inter-node communication and load balance efficiently but with only a small parallel construction overhead. This algorithm can scale to large-sized clusters showing both strong and weak scalability. Careful error and timing trade-off analysis are also performed for the cutoff functions induced by the vortex particle method. Our implementation can perform one time step of the velocity+stretching for one billion particles on 32 nodes in 55.9 seconds, which yields 49.12 Tflop/s. © 2012 IEEE.

  20. Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method

    International Nuclear Information System (INIS)

    Xu Xingsheng; Chen Hongda; Xiong Zhigang; Jin Aizi; Gu Changzhi; Cheng Bingying; Zhang Daozhong

    2007-01-01

    In this paper, we introduced the fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam machine, it shows that the method of focused-ion beam can fabricate two-dimensional photonic crystal and photonic crystal device efficiently, and the quality of the fabricated photonic crystal is high. Using the focused-ion beam method, we fabricate photonic crystal wavelength division multiplexer, and its characteristics are analyzed

  1. Preparation and characterization of ZnO transparent semiconductor thin films by sol-gel method

    International Nuclear Information System (INIS)

    Tsay, Chien-Yie; Fan, Kai-Shiung; Chen, Sih-Han; Tsai, Chia-Hao

    2010-01-01

    Transparent semiconductor thin films of zinc oxide (ZnO) were deposited onto alkali-free glass substrates by the sol-gel method and spin-coating technique. In this study, authors investigate the influence of the heating rate of the preheating process (4 or 10 o C/min) on the crystallization, surface morphology, and optical properties of sol-gel derived ZnO thin films. The ZnO sol was synthesized by dissolving zinc acetate dehydrate in ethanol, and then adding monoethanolamine. The as-coated films were preheated at 300 o C for 10 min and annealed at 500 o C for 1 h in air ambiance. Experimental results indicate that the heating rate of the preheating process strongly affected the surface morphology and transparency of ZnO thin film. Specifically, a heating rate of 10 o C/min for the preheating process produces a preferred orientation along the (0 0 2) plane and a high transmittance of 92% at a wavelength of 550 nm. Furthermore, this study reports the fabrication of thin-film transistors (TFTs) with a transparent ZnO active channel layer and evaluates their electrical performance.

  2. A finite element method for SSI time history calculation

    International Nuclear Information System (INIS)

    Ni, X.; Gantenbein, F.; Petit, M.

    1989-01-01

    The method which is proposed is based on a finite element modelization for the soil and the structure and a time history calculation. It has been developed for plane and axisymmetric geometries. The principle of this method is presented, then applications are given, first to a linear calculation for which results will be compared to those obtained by standard methods. Then results for a non linear behavior are described

  3. A stochastic method for computing hadronic matrix elements

    Energy Technology Data Exchange (ETDEWEB)

    Alexandrou, Constantia [Cyprus Univ., Nicosia (Cyprus). Dept. of Physics; The Cyprus Institute, Nicosia (Cyprus). Computational-based Science and Technology Research Center; Dinter, Simon; Drach, Vincent [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Jansen, Karl [Cyprus Univ., Nicosia (Cyprus). Dept. of Physics; Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Hadjiyiannakou, Kyriakos [Cyprus Univ., Nicosia (Cyprus). Dept. of Physics; Renner, Dru B. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Collaboration: European Twisted Mass Collaboration

    2013-02-15

    We present a stochastic method for the calculation of baryon three-point functions that is more versatile compared to the typically used sequential method. We analyze the scaling of the error of the stochastically evaluated three-point function with the lattice volume and find a favorable signal-to-noise ratio suggesting that our stochastic method can be used efficiently at large volumes to compute hadronic matrix elements.

  4. Thermohydraulic analysis in pipelines using the finite element method

    International Nuclear Information System (INIS)

    Costa, L.E.; Idelsohn, S.R.

    1984-01-01

    The Finite Element Method (FEM) is employed for the numerical solution of fluid flow problems with combined heat transfer mechanisms. Boussinesq approximations are used for the solution of the governing equations. The application of the FEM leads to a set of simultaneous nonlinear equations. The development of the method, for the solution of bidimensional and axisymmetric problems, is presented. Examples of fluid flow in pipes, including natural and forced convection, are solved with the proposed method and discussed in the paper. (Author) [pt

  5. A finite element method for SSI time history calculations

    International Nuclear Information System (INIS)

    Ni, X.M.; Gantenbein, F.; Petit, M.

    1989-01-01

    The method which is proposed is based on a finite element modelisation for the soil and the structure and a time history calculation. It has been developed for plane and axisymmetric geometries. The principle of this method will be presented, then applications will be given, first to a linear calculation for which results will be compared to those obtained by standard methods. Then results for a non linear behavior will be described

  6. Nuclear analytical methods for trace element studies in calcified tissues

    International Nuclear Information System (INIS)

    Chaudhry, M.A.; Chaudhry, M.N.

    2001-01-01

    Full text: Various nuclear analytical methods have been developed and applied to determine the elemental composition of calcified tissues (teeth and bones). Fluorine was determined by prompt gamma activation analysis through the 19 F(p,ag) 16 O reaction. Carbon was measured by activation analysis with He-3 ions, and the technique of Proton-Induced X-ray Emission (PIXE) was applied to simultaneously determine Ca, P, and trace elements in well-documented teeth. Dental hard tissues, enamel, dentine, cement, and their junctions, as well as different parts of the same tissue, were examined separately. Furthermore, using a Proton Microprobe, we measured the surface distribution of F and other elements on and around carious lesions on the enamel. The depth profiles of F, and other elements, were also measured right up to the amelodentin junction

  7. Implementation of density functional embedding theory within the projector-augmented-wave method and applications to semiconductor defect states

    International Nuclear Information System (INIS)

    Yu, Kuang; Libisch, Florian; Carter, Emily A.

    2015-01-01

    We report a new implementation of the density functional embedding theory (DFET) in the VASP code, using the projector-augmented-wave (PAW) formalism. Newly developed algorithms allow us to efficiently perform optimized effective potential optimizations within PAW. The new algorithm generates robust and physically correct embedding potentials, as we verified using several test systems including a covalently bound molecule, a metal surface, and bulk semiconductors. We show that with the resulting embedding potential, embedded cluster models can reproduce the electronic structure of point defects in bulk semiconductors, thereby demonstrating the validity of DFET in semiconductors for the first time. Compared to our previous version, the new implementation of DFET within VASP affords use of all features of VASP (e.g., a systematic PAW library, a wide selection of functionals, a more flexible choice of U correction formalisms, and faster computational speed) with DFET. Furthermore, our results are fairly robust with respect to both plane-wave and Gaussian type orbital basis sets in the embedded cluster calculations. This suggests that the density functional embedding method is potentially an accurate and efficient way to study properties of isolated defects in semiconductors

  8. (Environmental and geophysical modeling, fracture mechanics, and boundary element methods)

    Energy Technology Data Exchange (ETDEWEB)

    Gray, L.J.

    1990-11-09

    Technical discussions at the various sites visited centered on application of boundary integral methods for environmental modeling, seismic analysis, and computational fracture mechanics in composite and smart'' materials. The traveler also attended the International Association for Boundary Element Methods Conference at Rome, Italy. While many aspects of boundary element theory and applications were discussed in the papers, the dominant topic was the analysis and application of hypersingular equations. This has been the focus of recent work by the author, and thus the conference was highly relevant to research at ORNL.

  9. Matlab and C programming for Trefftz finite element methods

    CERN Document Server

    Qin, Qing-Hua

    2008-01-01

    Although the Trefftz finite element method (FEM) has become a powerful computational tool in the analysis of plane elasticity, thin and thick plate bending, Poisson's equation, heat conduction, and piezoelectric materials, there are few books that offer a comprehensive computer programming treatment of the subject. Collecting results scattered in the literature, MATLAB® and C Programming for Trefftz Finite Element Methods provides the detailed MATLAB® and C programming processes in applications of the Trefftz FEM to potential and elastic problems. The book begins with an introduction to th

  10. Stress and Deformation Analysis in Base Isolation Elements Using the Finite Element Method

    Directory of Open Access Journals (Sweden)

    Claudiu Iavornic

    2011-01-01

    Full Text Available In Modern tools as Finite Element Method can be used to study the behavior of elastomeric isolation systems. The simulation results obtained in this way provide a large series of data about the behavior of elastomeric isolation bearings under different types of loads and help in taking right decisions regarding geometrical optimizations needed for improve such kind of devices.

  11. A multiscale mortar multipoint flux mixed finite element method

    KAUST Repository

    Wheeler, Mary Fanett

    2012-02-03

    In this paper, we develop a multiscale mortar multipoint flux mixed finite element method for second order elliptic problems. The equations in the coarse elements (or subdomains) are discretized on a fine grid scale by a multipoint flux mixed finite element method that reduces to cell-centered finite differences on irregular grids. The subdomain grids do not have to match across the interfaces. Continuity of flux between coarse elements is imposed via a mortar finite element space on a coarse grid scale. With an appropriate choice of polynomial degree of the mortar space, we derive optimal order convergence on the fine scale for both the multiscale pressure and velocity, as well as the coarse scale mortar pressure. Some superconvergence results are also derived. The algebraic system is reduced via a non-overlapping domain decomposition to a coarse scale mortar interface problem that is solved using a multiscale flux basis. Numerical experiments are presented to confirm the theory and illustrate the efficiency and flexibility of the method. © EDP Sciences, SMAI, 2012.

  12. A particle finite element method for machining simulations

    Science.gov (United States)

    Sabel, Matthias; Sator, Christian; Müller, Ralf

    2014-07-01

    The particle finite element method (PFEM) appears to be a convenient technique for machining simulations, since the geometry and topology of the problem can undergo severe changes. In this work, a short outline of the PFEM-algorithm is given, which is followed by a detailed description of the involved operations. The -shape method, which is used to track the topology, is explained and tested by a simple example. Also the kinematics and a suitable finite element formulation are introduced. To validate the method simple settings without topological changes are considered and compared to the standard finite element method for large deformations. To examine the performance of the method, when dealing with separating material, a tensile loading is applied to a notched plate. This investigation includes a numerical analysis of the different meshing parameters, and the numerical convergence is studied. With regard to the cutting simulation it is found that only a sufficiently large number of particles (and thus a rather fine finite element discretisation) leads to converged results of process parameters, such as the cutting force.

  13. PHARMACOPOEIA METHODS FOR ELEMENTAL ANALYSIS OF MEDICINES: A COMPARATIVE STUDY

    Directory of Open Access Journals (Sweden)

    Tetiana M. Derkach

    2018-01-01

    Full Text Available The article is devoted to the problem of quality assurance of medicinal products, namely the determination of elemental impurity concentration compared to permitted daily exposures for and the correct choice analytical methods that are adequate to the formulated tasks. The paper goal is to compare characteristics of four analytical methods recommended by the Pharmacopoeia of various countries to control the content of elemental impurities in medicines, including medicinal plant raw materials and herbal medicines. Both advantages and disadvantages were described for atomic absorption spectroscopy with various atomising techniques, as well as atomic emission spectroscopy and mass spectrometry with inductively coupled plasma. The choice of the most rational analysis method depends on a research task and is reasoned from the viewpoint of analytical objectives, possible complications, performance attributes, and economic considerations. The methods of ICP-MS and GFAAS were shown to provide the greatest potential for determining the low and ultra-low concentrations of chemical elements in medicinal plants and herbal medicinal products. The other two methods, FAAS and ICP-AES, are limited to the analysis of the main essential elements and the largest impurities. The ICP-MS is the most efficient method for determining ultra-low concentrations. However, the interference of mass peaks is typical for ICP-MS. It is formed not only by impurities but also by polyatomic ions with the participation of argon, as well as atoms of gases from the air (C, N and O or matrices (O, N, H, P, S and Cl. Therefore, a correct sample preparation, which guarantees minimisation of impurity contamination and loss of analytes becomes the most crucial stage of analytical applications of ICP-MS. The detections limits for some chemical elements, which content is regulated in modern Pharmacopoeia, were estimated for each method and analysis conditions of medicinal plant raw

  14. Application of statistical methods (SPC) for an optimized control of the irradiation process of high-power semiconductors

    International Nuclear Information System (INIS)

    Mittendorfer, J.; Zwanziger, P.

    2000-01-01

    High-power bipolar semiconductor devices (thyristors and diodes) in a disc-type shape are key components (semiconductor switches) for high-power electronic systems. These systems are important for the economic design of energy transmission systems, i.e. high-power drive systems, static compensation and high-voltage DC transmission lines. In their factory located in Pretzfeld, Germany, the company, eupec GmbH+Co.KG (eupec), is producing disc-type devices with ceramic encapsulation in the high-end range for the world market. These elements have to fulfill special customer requirements and therefore deliver tailor-made trade-offs between their on-state voltage and dynamic switching behaviour. This task can be achieved by applying a dedicated electron irradiation on the semiconductor pellets, which tunes this trade-off. In this paper, the requirements to the irradiation company Mediscan GmbH, from the point of view of the semiconductor manufacturer, are described. The actual strategy for controlling the irradiation results to fulfill these requirements are presented, together with the choice of relevant parameters from the viewpoint of the irradiation company. The set of process parameters monitored, using statistical process control (SPC) techniques, includes beam current and energy, conveyor speed and irradiation geometry. The results are highlighted and show the successful co-operation in this business. Watching this process vice versa, an idea is presented and discussed to develop the possibilities of a highly sensitive dose detection device by using modified diodes, which could function as accurate yet cheap and easy-to-use detectors as routine dosimeters for irradiation institutes. (author)

  15. Engineering computation of structures the finite element method

    CERN Document Server

    Neto, Maria Augusta; Roseiro, Luis; Cirne, José; Leal, Rogério

    2015-01-01

    This book presents theories and the main useful techniques of the Finite Element Method (FEM), with an introduction to FEM and many case studies of its use in engineering practice. It supports engineers and students to solve primarily linear problems in mechanical engineering, with a main focus on static and dynamic structural problems. Readers of this text are encouraged to discover the proper relationship between theory and practice, within the finite element method: Practice without theory is blind, but theory without practice is sterile. Beginning with elasticity basic concepts and the classical theories of stressed materials, the work goes on to apply the relationship between forces, displacements, stresses and strains on the process of modeling, simulating and designing engineered technical systems. Chapters discuss the finite element equations for static, eigenvalue analysis, as well as transient analyses. Students and practitioners using commercial FEM software will find this book very helpful. It us...

  16. Ethnomathematics elements in Batik Bali using backpropagation method

    Science.gov (United States)

    Lestari, Mei; Irawan, Ari; Rahayu, Wanti; Wayan Parwati, Ni

    2018-05-01

    Batik is one of traditional arts that has been established by the UNESCO as Indonesia’s cultural heritage. Batik has varieties and motifs, and each motifs has its own uniqueness but seems similar, that makes it difficult to identify. This study aims to develop an application that can identify typical batik Bali with etnomatematics elements on it. Etnomatematics is a study that shows relation between culture and mathematics concepts. Etnomatematics in Batik Bali is more to geometrical concept in line of strong Balinese culture element. The identification process is use backpropagation method. Steps of backpropagation methods are image processing (including scalling and tresholding image process). Next step is insert the processed image to an artificial neural network. This study resulted an accuracy of identification of batik Bali that has Etnomatematics elements on it.

  17. Analysis of Brick Masonry Wall using Applied Element Method

    Science.gov (United States)

    Lincy Christy, D.; Madhavan Pillai, T. M.; Nagarajan, Praveen

    2018-03-01

    The Applied Element Method (AEM) is a versatile tool for structural analysis. Analysis is done by discretising the structure as in the case of Finite Element Method (FEM). In AEM, elements are connected by a set of normal and shear springs instead of nodes. AEM is extensively used for the analysis of brittle materials. Brick masonry wall can be effectively analyzed in the frame of AEM. The composite nature of masonry wall can be easily modelled using springs. The brick springs and mortar springs are assumed to be connected in series. The brick masonry wall is analyzed and failure load is determined for different loading cases. The results were used to find the best aspect ratio of brick to strengthen brick masonry wall.

  18. Hermitian Mindlin Plate Wavelet Finite Element Method for Load Identification

    Directory of Open Access Journals (Sweden)

    Xiaofeng Xue

    2016-01-01

    Full Text Available A new Hermitian Mindlin plate wavelet element is proposed. The two-dimensional Hermitian cubic spline interpolation wavelet is substituted into finite element functions to construct frequency response function (FRF. It uses a system’s FRF and response spectrums to calculate load spectrums and then derives loads in the time domain via the inverse fast Fourier transform. By simulating different excitation cases, Hermitian cubic spline wavelets on the interval (HCSWI finite elements are used to reverse load identification in the Mindlin plate. The singular value decomposition (SVD method is adopted to solve the ill-posed inverse problem. Compared with ANSYS results, HCSWI Mindlin plate element can accurately identify the applied load. Numerical results show that the algorithm of HCSWI Mindlin plate element is effective. The accuracy of HCSWI can be verified by comparing the FRF of HCSWI and ANSYS elements with the experiment data. The experiment proves that the load identification of HCSWI Mindlin plate is effective and precise by using the FRF and response spectrums to calculate the loads.

  19. Modelling of Granular Materials Using the Discrete Element Method

    DEFF Research Database (Denmark)

    Ullidtz, Per

    1997-01-01

    With the Discrete Element Method it is possible to model materials that consists of individual particles where a particle may role or slide on other particles. This is interesting because most of the deformation in granular materials is due to rolling or sliding rather that compression of the gra...

  20. Piezoelectric Accelerometers Modification Based on the Finite Element Method

    DEFF Research Database (Denmark)

    Liu, Bin; Kriegbaum, B.

    2000-01-01

    The paper describes the modification of piezoelectric accelerometers using a Finite Element (FE) method. Brüel & Kjær Accelerometer Type 8325 is chosen as an example to illustrate the advanced accelerometer development procedure. The deviation between the measurement and FE simulation results...

  1. A mixed finite element method for particle simulation in lasertron

    International Nuclear Information System (INIS)

    Le Meur, G.

    1987-03-01

    A particle simulation code is being developed with the aim to treat the motion of charged particles in electromagnetic devices, such as Lasertron. The paper describes the use of mixed finite element methods in computing the field components, without derivating them from scalar or vector potentials. Graphical results are shown

  2. Possibilities of Particle Finite Element Methods in Industrial Forming Processes

    Science.gov (United States)

    Oliver, J.; Cante, J. C.; Weyler, R.; Hernandez, J.

    2007-04-01

    The work investigates the possibilities offered by the particle finite element method (PFEM) in the simulation of forming problems involving large deformations, multiple contacts, and new boundaries generation. The description of the most distinguishing aspects of the PFEM, and its application to simulation of representative forming processes, illustrate the proposed methodology.

  3. Method to fabricate block fuel elements for high temperature reactors

    International Nuclear Information System (INIS)

    Hrovat, M.; Rachor, L.

    1977-01-01

    The fabrication of block fuel elements for gas-cooled high temperature reactors can be improved upon by adding 0.2 to 2 wt.% of a hydrocarbon compound to the lubricating mixture prior to pressing. Hexanol or octanol are named as substances. The dimensional accuracy of the block is thus improved. 2 examples illustrate the method. (RW) [de

  4. Nonconforming h-p spectral element methods for elliptic problems

    Indian Academy of Sciences (India)

    In [6,7,13,14] h-p spectral element methods for solving elliptic boundary value problems on polygonal ... Let M denote the number of corner layers and W denote the number of degrees of .... β is given by Theorem 2.2 of [3] which can be stated.

  5. A mixed finite element method for particle simulation in Lasertron

    International Nuclear Information System (INIS)

    Le Meur, G.

    1987-01-01

    A particle simulation code is being developed with the aim to treat the motion of charged particles in electromagnetic devices, such as Lasertron. The paper describes the use of mixed finite element methods in computing the field components, without derivating them from scalar or vector potentials. Graphical results are shown

  6. Three-dimensional wake field analysis by boundary element method

    International Nuclear Information System (INIS)

    Miyata, K.

    1987-01-01

    A computer code HERTPIA was developed for the calculation of electromagnetic wake fields excited by charged particles travelling through arbitrarily shaped accelerating cavities. This code solves transient wave problems for a Hertz vector. The numerical analysis is based on the boundary element method. This program is validated by comparing its results with analytical solutions in a pill-box cavity

  7. Deflation in preconditioned conjugate gradient methods for Finite Element Problems

    NARCIS (Netherlands)

    Vermolen, F.J.; Vuik, C.; Segal, A.

    2002-01-01

    We investigate the influence of the value of deflation vectors at interfaces on the rate of convergence of preconditioned conjugate gradient methods applied to a Finite Element discretization for an elliptic equation. Our set-up is a Poisson problem in two dimensions with continuous or discontinuous

  8. Method to fabricate block fuel elements for high temperature reactors

    International Nuclear Information System (INIS)

    Hrovat, M.; Rachor, L.

    1978-01-01

    The fabrication of block fuel elements for gas-cooled high temperature reactors can be improved upon by adding 0.2 to 2 wt.% of a hydrocarbon compound to the lubricating mixture prior to pressing. Hexanol or octanol are named as substances. The dimensional accuracy of the block is thus improved. 2 examples illustrate the method. (orig./PW)

  9. A Finite Element Removal Method for 3D Topology Optimization

    Directory of Open Access Journals (Sweden)

    M. Akif Kütük

    2013-01-01

    Full Text Available Topology optimization provides great convenience to designers during the designing stage in many industrial applications. With this method, designers can obtain a rough model of any part at the beginning of a designing stage by defining loading and boundary conditions. At the same time the optimization can be used for the modification of a product which is being used. Lengthy solution time is a disadvantage of this method. Therefore, the method cannot be widespread. In order to eliminate this disadvantage, an element removal algorithm has been developed for topology optimization. In this study, the element removal algorithm is applied on 3-dimensional parts, and the results are compared with the ones available in the related literature. In addition, the effects of the method on solution times are investigated.

  10. Counting addressing method: Command addressable element and extinguishing module

    Directory of Open Access Journals (Sweden)

    Ristić Jovan D.

    2009-01-01

    Full Text Available The specific requirements that appear in addressable fire detection and alarm systems and the shortcomings of the existing addressing methods were discussed. A new method of addressing of detectors was proposed. The basic principles of addressing and responding of a called element are stated. Extinguishing module is specific subsystem in classic fire detection and alarm systems. Appearing of addressable fire detection and alarm systems didn't caused essential change in the concept of extinguishing module because of long calling period of such systems. Addressable fire security system based on counting addressing method reaches high calling rates and enables integrating of the extinguishing module in addressable system. Solutions for command addressable element and integrated extinguishing module are given in this paper. The counting addressing method was developed for specific requirements in fire detection and alarm systems, yet its speed and reliability justifies its use in the acquisition of data on slowly variable parameters under industrial conditions. .

  11. Analysis of Tire Tractive Performance on Deformable Terrain by Finite Element-Discrete Element Method

    Science.gov (United States)

    Nakashima, Hiroshi; Takatsu, Yuzuru

    The goal of this study is to develop a practical and fast simulation tool for soil-tire interaction analysis, where finite element method (FEM) and discrete element method (DEM) are coupled together, and which can be realized on a desktop PC. We have extended our formerly proposed dynamic FE-DE method (FE-DEM) to include practical soil-tire system interaction, where not only the vertical sinkage of a tire, but also the travel of a driven tire was considered. Numerical simulation by FE-DEM is stable, and the relationships between variables, such as load-sinkage and sinkage-travel distance, and the gross tractive effort and running resistance characteristics, are obtained. Moreover, the simulation result is accurate enough to predict the maximum drawbar pull for a given tire, once the appropriate parameter values are provided. Therefore, the developed FE-DEM program can be applied with sufficient accuracy to interaction problems in soil-tire systems.

  12. Use of the iterative solution method for coupled finite element and boundary element modeling

    International Nuclear Information System (INIS)

    Koteras, J.R.

    1993-07-01

    Tunnels buried deep within the earth constitute an important class geomechanics problems. Two numerical techniques used for the analysis of geomechanics problems, the finite element method and the boundary element method, have complementary characteristics for applications to problems of this type. The usefulness of combining these two methods for use as a geomechanics analysis tool has been recognized for some time, and a number of coupling techniques have been proposed. However, not all of them lend themselves to efficient computational implementations for large-scale problems. This report examines a coupling technique that can form the basis for an efficient analysis tool for large scale geomechanics problems through the use of an iterative equation solver

  13. Convergence of a residual based artificial viscosity finite element method

    KAUST Repository

    Nazarov, Murtazo

    2013-02-01

    We present a residual based artificial viscosity finite element method to solve conservation laws. The Galerkin approximation is stabilized by only residual based artificial viscosity, without any least-squares, SUPG, or streamline diffusion terms. We prove convergence of the method, applied to a scalar conservation law in two space dimensions, toward an unique entropy solution for implicit time stepping schemes. © 2012 Elsevier B.V. All rights reserved.

  14. A code for obtaining temperature distribution by finite element method

    International Nuclear Information System (INIS)

    Bloch, M.

    1984-01-01

    The ELEFIB Fortran language computer code using finite element method for calculating temperature distribution of linear and two dimensional problems, in permanent region or in the transient phase of heat transfer, is presented. The formulation of equations uses the Galerkin method. Some examples are shown and the results are compared with other papers. The comparative evaluation shows that the elaborated code gives good values. (M.C.K.) [pt

  15. Parallel Fast Multipole Boundary Element Method for crustal dynamics

    International Nuclear Information System (INIS)

    Quevedo, Leonardo; Morra, Gabriele; Mueller, R Dietmar

    2010-01-01

    Crustal faults and sharp material transitions in the crust are usually represented as triangulated surfaces in structural geological models. The complex range of volumes separating such surfaces is typically three-dimensionally meshed in order to solve equations that describe crustal deformation with the finite-difference (FD) or finite-element (FEM) methods. We show here how the Boundary Element Method, combined with the Multipole approach, can revolutionise the calculation of stress and strain, solving the problem of computational scalability from reservoir to basin scales. The Fast Multipole Boundary Element Method (Fast BEM) tackles the difficulty of handling the intricate volume meshes and high resolution of crustal data that has put classical Finite 3D approaches in a performance crisis. The two main performance enhancements of this method: the reduction of required mesh elements from cubic to quadratic with linear size and linear-logarithmic runtime; achieve a reduction of memory and runtime requirements allowing the treatment of a new scale of geodynamic models. This approach was recently tested and applied in a series of papers by [1, 2, 3] for regional and global geodynamics, using KD trees for fast identification of near and far-field interacting elements, and MPI parallelised code on distributed memory architectures, and is now in active development for crustal dynamics. As the method is based on a free-surface, it allows easy data transfer to geological visualisation tools where only changes in boundaries and material properties are required as input parameters. In addition, easy volume mesh sampling of physical quantities enables direct integration with existing FD/FEM code.

  16. Density functional theory and beyond-opportunities for quantum methods in materials modeling semiconductor technology

    International Nuclear Information System (INIS)

    Shankar, Sadasivan; Simka, Harsono; Haverty, Michael

    2008-01-01

    In the semiconductor industry, the use of new materials has been increasing with the advent of nanotechnology. As critical dimensions decrease, and the number of materials increases, the interactions between heterogeneous materials themselves and processing increase in complexity. Traditionally, applications of ab initio techniques are confined to electronic structure and band gap calculations of bulk materials, which are then used in coarse-grained models such as mesoscopic and continuum models. Density functional theory is the most widely used ab initio technique that was successfully extended to several applications. This paper illustrates applications of density functional theory to semiconductor processes and proposes further opportunities for use of such techniques in process development

  17. Hybrid finite element and Brownian dynamics method for charged particles

    Energy Technology Data Exchange (ETDEWEB)

    Huber, Gary A., E-mail: ghuber@ucsd.edu; Miao, Yinglong [Howard Hughes Medical Institute, University of California San Diego, La Jolla, California 92093-0365 (United States); Zhou, Shenggao [Department of Mathematics and Mathematical Center for Interdiscipline Research, Soochow University, 1 Shizi Street, Suzhou, 215006 Jiangsu (China); Li, Bo [Department of Mathematics and Quantitative Biology Graduate Program, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0112 (United States); McCammon, J. Andrew [Howard Hughes Medical Institute, University of California San Diego, La Jolla, California 92093 (United States); Department of Chemistry and Biochemistry, University of California San Diego, La Jolla, California 92093-0365 (United States); Department of Pharmacology, University of California San Diego, La Jolla, California 92093-0636 (United States)

    2016-04-28

    Diffusion is often the rate-determining step in many biological processes. Currently, the two main computational methods for studying diffusion are stochastic methods, such as Brownian dynamics, and continuum methods, such as the finite element method. A previous study introduced a new hybrid diffusion method that couples the strengths of each of these two methods, but was limited by the lack of interactions among the particles; the force on each particle had to be from an external field. This study further develops the method to allow charged particles. The method is derived for a general multidimensional system and is presented using a basic test case for a one-dimensional linear system with one charged species and a radially symmetric system with three charged species.

  18. Steam generator tube rupture simulation using extended finite element method

    Energy Technology Data Exchange (ETDEWEB)

    Mohanty, Subhasish, E-mail: smohanty@anl.gov; Majumdar, Saurin; Natesan, Ken

    2016-08-15

    Highlights: • Extended finite element method used for modeling the steam generator tube rupture. • Crack propagation is modeled in an arbitrary solution dependent path. • The FE model is used for estimating the rupture pressure of steam generator tubes. • Crack coalescence modeling is also demonstrated. • The method can be used for crack modeling of tubes under severe accident condition. - Abstract: A steam generator (SG) is an important component of any pressurized water reactor. Steam generator tubes represent a primary pressure boundary whose integrity is vital to the safe operation of the reactor. SG tubes may rupture due to propagation of a crack created by mechanisms such as stress corrosion cracking, fatigue, etc. It is thus important to estimate the rupture pressures of cracked tubes for structural integrity evaluation of SGs. The objective of the present paper is to demonstrate the use of extended finite element method capability of commercially available ABAQUS software, to model SG tubes with preexisting flaws and to estimate their rupture pressures. For the purpose, elastic–plastic finite element models were developed for different SG tubes made from Alloy 600 material. The simulation results were compared with experimental results available from the steam generator tube integrity program (SGTIP) sponsored by the United States Nuclear Regulatory Commission (NRC) and conducted at Argonne National Laboratory (ANL). A reasonable correlation was found between extended finite element model results and experimental results.

  19. Steam generator tube rupture simulation using extended finite element method

    International Nuclear Information System (INIS)

    Mohanty, Subhasish; Majumdar, Saurin; Natesan, Ken

    2016-01-01

    Highlights: • Extended finite element method used for modeling the steam generator tube rupture. • Crack propagation is modeled in an arbitrary solution dependent path. • The FE model is used for estimating the rupture pressure of steam generator tubes. • Crack coalescence modeling is also demonstrated. • The method can be used for crack modeling of tubes under severe accident condition. - Abstract: A steam generator (SG) is an important component of any pressurized water reactor. Steam generator tubes represent a primary pressure boundary whose integrity is vital to the safe operation of the reactor. SG tubes may rupture due to propagation of a crack created by mechanisms such as stress corrosion cracking, fatigue, etc. It is thus important to estimate the rupture pressures of cracked tubes for structural integrity evaluation of SGs. The objective of the present paper is to demonstrate the use of extended finite element method capability of commercially available ABAQUS software, to model SG tubes with preexisting flaws and to estimate their rupture pressures. For the purpose, elastic–plastic finite element models were developed for different SG tubes made from Alloy 600 material. The simulation results were compared with experimental results available from the steam generator tube integrity program (SGTIP) sponsored by the United States Nuclear Regulatory Commission (NRC) and conducted at Argonne National Laboratory (ANL). A reasonable correlation was found between extended finite element model results and experimental results.

  20. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  1. Flow Applications of the Least Squares Finite Element Method

    Science.gov (United States)

    Jiang, Bo-Nan

    1998-01-01

    The main thrust of the effort has been towards the development, analysis and implementation of the least-squares finite element method (LSFEM) for fluid dynamics and electromagnetics applications. In the past year, there were four major accomplishments: 1) special treatments in computational fluid dynamics and computational electromagnetics, such as upwinding, numerical dissipation, staggered grid, non-equal order elements, operator splitting and preconditioning, edge elements, and vector potential are unnecessary; 2) the analysis of the LSFEM for most partial differential equations can be based on the bounded inverse theorem; 3) the finite difference and finite volume algorithms solve only two Maxwell equations and ignore the divergence equations; and 4) the first numerical simulation of three-dimensional Marangoni-Benard convection was performed using the LSFEM.

  2. An implicit finite element method for discrete dynamic fracture

    Energy Technology Data Exchange (ETDEWEB)

    Gerken, Jobie M. [Colorado State Univ., Fort Collins, CO (United States)

    1999-12-01

    A method for modeling the discrete fracture of two-dimensional linear elastic structures with a distribution of small cracks subject to dynamic conditions has been developed. The foundation for this numerical model is a plane element formulated from the Hu-Washizu energy principle. The distribution of small cracks is incorporated into the numerical model by including a small crack at each element interface. The additional strain field in an element adjacent to this crack is treated as an externally applied strain field in the Hu-Washizu energy principle. The resulting stiffness matrix is that of a standard plane element. The resulting load vector is that of a standard plane element with an additional term that includes the externally applied strain field. Except for the crack strain field equations, all terms of the stiffness matrix and load vector are integrated symbolically in Maple V so that fully integrated plane stress and plane strain elements are constructed. The crack strain field equations are integrated numerically. The modeling of dynamic behavior of simple structures was demonstrated within acceptable engineering accuracy. In the model of axial and transverse vibration of a beam and the breathing mode of vibration of a thin ring, the dynamic characteristics were shown to be within expected limits. The models dominated by tensile forces (the axially loaded beam and the pressurized ring) were within 0.5% of the theoretical values while the shear dominated model (the transversely loaded beam) is within 5% of the calculated theoretical value. The constant strain field of the tensile problems can be modeled exactly by the numerical model. The numerical results should therefore, be exact. The discrepancies can be accounted for by errors in the calculation of frequency from the numerical results. The linear strain field of the transverse model must be modeled by a series of constant strain elements. This is an approximation to the true strain field, so some

  3. Finite cover method with mortar elements for elastoplasticity problems

    Science.gov (United States)

    Kurumatani, M.; Terada, K.

    2005-06-01

    Finite cover method (FCM) is extended to elastoplasticity problems. The FCM, which was originally developed under the name of manifold method, has recently been recognized as one of the generalized versions of finite element methods (FEM). Since the mesh for the FCM can be regular and squared regardless of the geometry of structures to be analyzed, structural analysts are released from a burdensome task of generating meshes conforming to physical boundaries. Numerical experiments are carried out to assess the performance of the FCM with such discretization in elastoplasticity problems. Particularly to achieve this accurately, the so-called mortar elements are introduced to impose displacement boundary conditions on the essential boundaries, and displacement compatibility conditions on material interfaces of two-phase materials or on joint surfaces between mutually incompatible meshes. The validity of the mortar approximation is also demonstrated in the elastic-plastic FCM.

  4. Nonlinear dynamic analysis using Petrov-Galerkin natural element method

    International Nuclear Information System (INIS)

    Lee, Hong Woo; Cho, Jin Rae

    2004-01-01

    According to our previous study, it is confirmed that the Petrov-Galerkin Natural Element Method (PG-NEM) completely resolves the numerical integration inaccuracy in the conventional Bubnov-Galerkin Natural Element Method (BG-NEM). This paper is an extension of PG-NEM to two-dimensional nonlinear dynamic problem. For the analysis, a constant average acceleration method and a linearized total Lagrangian formulation is introduced with the PG-NEM. At every time step, the grid points are updated and the shape functions are reproduced from the relocated nodal distribution. This process enables the PG-NEM to provide more accurate and robust approximations. The representative numerical experiments performed by the test Fortran program, and the numerical results confirmed that the PG-NEM effectively and accurately approximates the nonlinear dynamic problem

  5. Radiation doping methods of semiconductor materials: the nuclear doping by charged particles

    International Nuclear Information System (INIS)

    Kozlovskii, V.V.; Zakharenkov, L.F.

    1996-01-01

    A review is given of the state of the art in one of the current topics in radiation doping of semiconductors, which is process of nuclear transmutation doping (NTD) by charged particles. In contrast to the neutron and photonuclear transmutation doping, which have been dealt with in monograths and reviews, NTD caused by the action of charged particles is a subject growing very rapidly in the last 10-15 years, but still lacking systematic accounts. The review consists of three sections. The first section deals with the characteristics of nuclear reactions in semiconductors caused by the action of charged particles: the main stress is on the modeling of NTD processes in semiconductors under the action of charged particles. In the second section the state of the art of experimental investigations of NTD under the influence of charged particles is considered. An analysis is made of the communications reporting experimental data on the total numbers of dopants which are introduced, concentration of the electrically active fraction of the impurity, profiles of the dopant distributions, and conditions for efficient annealing of radiation defects. The third section deals with the suitability of NTD by charged particles for the fabrication of semiconductor devices. (author)

  6. The Semiconductor Industry and Emerging Technologies: A Study Using a Modified Delphi Method

    Science.gov (United States)

    Jordan, Edgar A.

    2010-01-01

    The purpose of this qualitative descriptive study was to determine what leaders in the semiconductor industry thought the future of computing would look like and what emerging materials showed the most promise to overcome the current theoretical limit of 10 nanometers for silicon dioxide. The researcher used a modified Delphi technique in two…

  7. Complex-envelope alternating-direction-implicit FDTD method for simulating active photonic devices with semiconductor/solid-state media.

    Science.gov (United States)

    Singh, Gurpreet; Ravi, Koustuban; Wang, Qian; Ho, Seng-Tiong

    2012-06-15

    A complex-envelope (CE) alternating-direction-implicit (ADI) finite-difference time-domain (FDTD) approach to treat light-matter interaction self-consistently with electromagnetic field evolution for efficient simulations of active photonic devices is presented for the first time (to our best knowledge). The active medium (AM) is modeled using an efficient multilevel system of carrier rate equations to yield the correct carrier distributions, suitable for modeling semiconductor/solid-state media accurately. To include the AM in the CE-ADI-FDTD method, a first-order differential system involving CE fields in the AM is first set up. The system matrix that includes AM parameters is then split into two time-dependent submatrices that are then used in an efficient ADI splitting formula. The proposed CE-ADI-FDTD approach with AM takes 22% of the time as the approach of the corresponding explicit FDTD, as validated by semiconductor microdisk laser simulations.

  8. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  9. Moving finite elements: A continuously adaptive method for computational fluid dynamics

    International Nuclear Information System (INIS)

    Glasser, A.H.; Miller, K.; Carlson, N.

    1991-01-01

    Moving Finite Elements (MFE), a recently developed method for computational fluid dynamics, promises major advances in the ability of computers to model the complex behavior of liquids, gases, and plasmas. Applications of computational fluid dynamics occur in a wide range of scientifically and technologically important fields. Examples include meteorology, oceanography, global climate modeling, magnetic and inertial fusion energy research, semiconductor fabrication, biophysics, automobile and aircraft design, industrial fluid processing, chemical engineering, and combustion research. The improvements made possible by the new method could thus have substantial economic impact. Moving Finite Elements is a moving node adaptive grid method which has a tendency to pack the grid finely in regions where it is most needed at each time and to leave it coarse elsewhere. It does so in a manner which is simple and automatic, and does not require a large amount of human ingenuity to apply it to each particular problem. At the same time, it often allows the time step to be large enough to advance a moving shock by many shock thicknesses in a single time step, moving the grid smoothly with the solution and minimizing the number of time steps required for the whole problem. For 2D problems (two spatial variables) the grid is composed of irregularly shaped and irregularly connected triangles which are very flexible in their ability to adapt to the evolving solution. While other adaptive grid methods have been developed which share some of these desirable properties, this is the only method which combines them all. In many cases, the method can save orders of magnitude of computing time, equivalent to several generations of advancing computer hardware

  10. Generalization of mixed multiscale finite element methods with applications

    Energy Technology Data Exchange (ETDEWEB)

    Lee, C S [Texas A & M Univ., College Station, TX (United States)

    2016-08-01

    Many science and engineering problems exhibit scale disparity and high contrast. The small scale features cannot be omitted in the physical models because they can affect the macroscopic behavior of the problems. However, resolving all the scales in these problems can be prohibitively expensive. As a consequence, some types of model reduction techniques are required to design efficient solution algorithms. For practical purpose, we are interested in mixed finite element problems as they produce solutions with certain conservative properties. Existing multiscale methods for such problems include the mixed multiscale finite element methods. We show that for complicated problems, the mixed multiscale finite element methods may not be able to produce reliable approximations. This motivates the need of enrichment for coarse spaces. Two enrichment approaches are proposed, one is based on generalized multiscale finte element metthods (GMsFEM), while the other is based on spectral element-based algebraic multigrid (rAMGe). The former one, which is called mixed GMsFEM, is developed for both Darcy’s flow and linear elasticity. Application of the algorithm in two-phase flow simulations are demonstrated. For linear elasticity, the algorithm is subtly modified due to the symmetry requirement of the stress tensor. The latter enrichment approach is based on rAMGe. The algorithm differs from GMsFEM in that both of the velocity and pressure spaces are coarsened. Due the multigrid nature of the algorithm, recursive application is available, which results in an efficient multilevel construction of the coarse spaces. Stability, convergence analysis, and exhaustive numerical experiments are carried out to validate the proposed enrichment approaches. iii

  11. Finite element method for time-space-fractional Schrodinger equation

    Directory of Open Access Journals (Sweden)

    Xiaogang Zhu

    2017-07-01

    Full Text Available In this article, we develop a fully discrete finite element method for the nonlinear Schrodinger equation (NLS with time- and space-fractional derivatives. The time-fractional derivative is described in Caputo's sense and the space-fractional derivative in Riesz's sense. Its stability is well derived; the convergent estimate is discussed by an orthogonal operator. We also extend the method to the two-dimensional time-space-fractional NLS and to avoid the iterative solvers at each time step, a linearized scheme is further conducted. Several numerical examples are implemented finally, which confirm the theoretical results as well as illustrate the accuracy of our methods.

  12. Eddy current analysis by the finite element circuit method

    International Nuclear Information System (INIS)

    Kameari, A.; Suzuki, Y.

    1977-01-01

    The analysis of the transient eddy current in the conductors by ''Finite Element Circuit Method'' is developed. This method can be easily applied to various geometrical shapes of thin conductors. The eddy currents on the vacuum vessel and the upper and lower support plates of JT-60 machine (which is now being constructed by Japan Atomic Energy Research Institute) are calculated by this method. The magnetic field induced by the eddy current is estimated in the domain occupied by the plasma. And the force exerted to the vacuum vessel is also estimated

  13. Improved determination of hadron matrix elements using the variational method

    International Nuclear Information System (INIS)

    Dragos, J.; Kamleh, W.; Leinweber, D.B.; Zanotti, J.M.; Rakow, P.E.L.; Young, R.D.; Adelaide Univ.

    2015-11-01

    The extraction of hadron form factors in lattice QCD using the standard two- and three-point correlator functions has its limitations. One of the most commonly studied sources of systematic error is excited state contamination, which occurs when correlators are contaminated with results from higher energy excitations. We apply the variational method to calculate the axial vector current g A and compare the results to the more commonly used summation and two-exponential fit methods. The results demonstrate that the variational approach offers a more efficient and robust method for the determination of nucleon matrix elements.

  14. Hybrid Fundamental Solution Based Finite Element Method: Theory and Applications

    Directory of Open Access Journals (Sweden)

    Changyong Cao

    2015-01-01

    Full Text Available An overview on the development of hybrid fundamental solution based finite element method (HFS-FEM and its application in engineering problems is presented in this paper. The framework and formulations of HFS-FEM for potential problem, plane elasticity, three-dimensional elasticity, thermoelasticity, anisotropic elasticity, and plane piezoelectricity are presented. In this method, two independent assumed fields (intraelement filed and auxiliary frame field are employed. The formulations for all cases are derived from the modified variational functionals and the fundamental solutions to a given problem. Generation of elemental stiffness equations from the modified variational principle is also described. Typical numerical examples are given to demonstrate the validity and performance of the HFS-FEM. Finally, a brief summary of the approach is provided and future trends in this field are identified.

  15. The finite element method and applications in engineering using ANSYS

    CERN Document Server

    Madenci, Erdogan

    2015-01-01

    This textbook offers theoretical and practical knowledge of the finite element method. The book equips readers with the skills required to analyze engineering problems using ANSYS®, a commercially available FEA program. Revised and updated, this new edition presents the most current ANSYS® commands and ANSYS® screen shots, as well as modeling steps for each example problem. This self-contained, introductory text minimizes the need for additional reference material by covering both the fundamental topics in finite element methods and advanced topics concerning modeling and analysis. It focuses on the use of ANSYS® through both the Graphics User Interface (GUI) and the ANSYS® Parametric Design Language (APDL). Extensive examples from a range of engineering disciplines are presented in a straightforward, step-by-step fashion. Key topics include: • An introduction to FEM • Fundamentals and analysis capabilities of ANSYS® • Fundamentals of discretization and approximation functions • Modeling techniq...

  16. Introduction to assembly of finite element methods on graphics processors

    International Nuclear Information System (INIS)

    Cecka, Cristopher; Lew, Adrian; Darve, Eric

    2010-01-01

    Recently, graphics processing units (GPUs) have had great success in accelerating numerical computations. We present their application to computations on unstructured meshes such as those in finite element methods. Multiple approaches in assembling and solving sparse linear systems with NVIDIA GPUs and the Compute Unified Device Architecture (CUDA) are presented and discussed. Multiple strategies for efficient use of global, shared, and local memory, methods to achieve memory coalescing, and optimal choice of parameters are introduced. We find that with appropriate preprocessing and arrangement of support data, the GPU coprocessor achieves speedups of 30x or more in comparison to a well optimized serial implementation on the CPU. We also find that the optimal assembly strategy depends on the order of polynomials used in the finite-element discretization.

  17. A collocation finite element method with prior matrix condensation

    International Nuclear Information System (INIS)

    Sutcliffe, W.J.

    1977-01-01

    For thin shells with general loading, sixteen degrees of freedom have been used for a previous finite element solution procedure using a Collocation method instead of the usual variational based procedures. Although the number of elements required was relatively small, nevertheless the final matrix for the simultaneous solution of all unknowns could become large for a complex compound structure. The purpose of the present paper is to demonstrate a method of reducing the final matrix size, so allowing solution for large structures with comparatively small computer storage requirements while retaining the accuracy given by high order displacement functions. Collocation points, a number are equilibrium conditions which must be satisfied independently of the overall compatibility of forces and deflections for a complete structure. (Auth.)

  18. Assembly of finite element methods on graphics processors

    KAUST Repository

    Cecka, Cris

    2010-08-23

    Recently, graphics processing units (GPUs) have had great success in accelerating many numerical computations. We present their application to computations on unstructured meshes such as those in finite element methods. Multiple approaches in assembling and solving sparse linear systems with NVIDIA GPUs and the Compute Unified Device Architecture (CUDA) are created and analyzed. Multiple strategies for efficient use of global, shared, and local memory, methods to achieve memory coalescing, and optimal choice of parameters are introduced. We find that with appropriate preprocessing and arrangement of support data, the GPU coprocessor using single-precision arithmetic achieves speedups of 30 or more in comparison to a well optimized double-precision single core implementation. We also find that the optimal assembly strategy depends on the order of polynomials used in the finite element discretization. © 2010 John Wiley & Sons, Ltd.

  19. Finite Element Method for Analysis of Material Properties

    DEFF Research Database (Denmark)

    Rauhe, Jens Christian

    and the finite element method. The material microstructure of the heterogeneous material is non-destructively determined using X-ray microtomography. A software program has been generated which uses the X-ray tomographic data as an input for the mesh generation of the material microstructure. To obtain a proper...... which are used for the determination of the effective properties of the heterogeneous material. Generally, the properties determined using the finite element method coupled with X-ray microtomography are in good agreement with both experimentally determined properties and properties determined using......The use of cellular and composite materials have in recent years become more and more common in all kinds of structural components and accurate knowledge of the effective properties is therefore essential. In this wok the effective properties are determined using the real material microstructure...

  20. Overlapping Schwarz for Nonlinear Problems. An Element Agglomeration Nonlinear Additive Schwarz Preconditioned Newton Method for Unstructured Finite Element Problems

    Energy Technology Data Exchange (ETDEWEB)

    Cai, X C; Marcinkowski, L; Vassilevski, P S

    2005-02-10

    This paper extends previous results on nonlinear Schwarz preconditioning ([4]) to unstructured finite element elliptic problems exploiting now nonlocal (but small) subspaces. The non-local finite element subspaces are associated with subdomains obtained from a non-overlapping element partitioning of the original set of elements and are coarse outside the prescribed element subdomain. The coarsening is based on a modification of the agglomeration based AMGe method proposed in [8]. Then, the algebraic construction from [9] of the corresponding non-linear finite element subproblems is applied to generate the subspace based nonlinear preconditioner. The overall nonlinearly preconditioned problem is solved by an inexact Newton method. Numerical illustration is also provided.

  1. [Application of Finite Element Method in Thoracolumbar Spine Traumatology].

    Science.gov (United States)

    Zhang, Min; Qiu, Yong-gui; Shao, Yu; Gu, Xiao-feng; Zeng, Ming-wei

    2015-04-01

    The finite element method (FEM) is a mathematical technique using modern computer technology for stress analysis, and has been gradually used in simulating human body structures in the biomechanical field, especially more widely used in the research of thoracolumbar spine traumatology. This paper reviews the establishment of the thoracolumbar spine FEM, the verification of the FEM, and the thoracolumbar spine FEM research status in different fields, and discusses its prospects and values in forensic thoracolumbar traumatology.

  2. A finite element method for flow problems in blast loading

    International Nuclear Information System (INIS)

    Forestier, A.; Lepareux, M.

    1984-06-01

    This paper presents a numerical method which describes fast dynamic problems in flow transient situations as in nuclear plants. A finite element formulation has been chosen; it is described by a preprocessor in CASTEM system: GIBI code. For these typical flow problems, an A.L.E. formulation for physical equations is used. So, some applications are presented: the well known problem of shock tube, the same one in 2D case and a last application to hydrogen detonation

  3. Parallel 3D Mortar Element Method for Adaptive Nonconforming Meshes

    Science.gov (United States)

    Feng, Huiyu; Mavriplis, Catherine; VanderWijngaart, Rob; Biswas, Rupak

    2004-01-01

    High order methods are frequently used in computational simulation for their high accuracy. An efficient way to avoid unnecessary computation in smooth regions of the solution is to use adaptive meshes which employ fine grids only in areas where they are needed. Nonconforming spectral elements allow the grid to be flexibly adjusted to satisfy the computational accuracy requirements. The method is suitable for computational simulations of unsteady problems with very disparate length scales or unsteady moving features, such as heat transfer, fluid dynamics or flame combustion. In this work, we select the Mark Element Method (MEM) to handle the non-conforming interfaces between elements. A new technique is introduced to efficiently implement MEM in 3-D nonconforming meshes. By introducing an "intermediate mortar", the proposed method decomposes the projection between 3-D elements and mortars into two steps. In each step, projection matrices derived in 2-D are used. The two-step method avoids explicitly forming/deriving large projection matrices for 3-D meshes, and also helps to simplify the implementation. This new technique can be used for both h- and p-type adaptation. This method is applied to an unsteady 3-D moving heat source problem. With our new MEM implementation, mesh adaptation is able to efficiently refine the grid near the heat source and coarsen the grid once the heat source passes. The savings in computational work resulting from the dynamic mesh adaptation is demonstrated by the reduction of the the number of elements used and CPU time spent. MEM and mesh adaptation, respectively, bring irregularity and dynamics to the computer memory access pattern. Hence, they provide a good way to gauge the performance of computer systems when running scientific applications whose memory access patterns are irregular and unpredictable. We select a 3-D moving heat source problem as the Unstructured Adaptive (UA) grid benchmark, a new component of the NAS Parallel

  4. Parallel algorithms for solving the diffusion equation by finite elements methods and by nodal methods

    International Nuclear Information System (INIS)

    Coulomb, F.

    1989-06-01

    The aim of this work is to study methods for solving the diffusion equation, based on a primal or mixed-dual finite elements discretization and well suited for use on multiprocessors computers; domain decomposition methods are the subject of the main part of this study, the linear systems being solved by the block-Jacobi method. The origin of the diffusion equation is explained in short, and various variational formulations are reminded. A survey of iterative methods is given. The elemination of the flux or current is treated in the case of a mixed method. Numerical tests are performed on two examples of reactors, in order to compare mixed elements and Lagrange elements. A theoretical study of domain decomposition is led in the case of Lagrange finite elements, and convergence conditions for the block-Jacobi method are derived; the dissection decomposition is previously the purpose of a particular numerical analysis. In the case of mixed-dual finite elements, a study is led on examples and is confirmed by numerical tests performed for the dissection decomposition; furthermore, after being justified, decompositions along axes of symmetry are numerically tested. In the case of a decomposition into two subdomains, the dissection decomposition and the decomposition with an integrated interface are compared. Alternative directions methods are defined; the convergence of those relative to Lagrange elements is shown; in the case of mixed elements, convergence conditions are found [fr

  5. On the trial functions in nested element method

    International Nuclear Information System (INIS)

    Altiparmakov, D.V.

    1985-01-01

    The R-function method is applied to the multidimensional steady-state neutron diffusion equation. Using a variational principle the nested element approximation is formulated. Trial functions taking into account the geometrical shape of material regions are constructed. The influence of both the surrounding regions and the corner singularities at the external boundary is incorporated into the approximate solution. Benchmark calculations show that such an approximation can yield satisfactory results. Moreover, in the case of complex geometry, the presented approach would result in a significant reduction of the number of unknowns compared to other methods

  6. Improved fixed point iterative method for blade element momentum computations

    DEFF Research Database (Denmark)

    Sun, Zhenye; Shen, Wen Zhong; Chen, Jin

    2017-01-01

    The blade element momentum (BEM) theory is widely used in aerodynamic performance calculations and optimization applications for wind turbines. The fixed point iterative method is the most commonly utilized technique to solve the BEM equations. However, this method sometimes does not converge...... are addressed through both theoretical analysis and numerical tests. A term from the BEM equations equals to zero at a critical inflow angle is the source of the convergence problems. When the initial inflow angle is set larger than the critical inflow angle and the relaxation methodology is adopted...

  7. Scientific use of the finite element method in Orthodontics

    Science.gov (United States)

    Knop, Luegya; Gandini, Luiz Gonzaga; Shintcovsk, Ricardo Lima; Gandini, Marcia Regina Elisa Aparecida Schiavon

    2015-01-01

    INTRODUCTION: The finite element method (FEM) is an engineering resource applied to calculate the stress and deformation of complex structures, and has been widely used in orthodontic research. With the advantage of being a non-invasive and accurate method that provides quantitative and detailed data on the physiological reactions possible to occur in tissues, applying the FEM can anticipate the visualization of these tissue responses through the observation of areas of stress created from applied orthodontic mechanics. OBJECTIVE: This article aims at reviewing and discussing the stages of the finite element method application and its applicability in Orthodontics. RESULTS: FEM is able to evaluate the stress distribution at the interface between periodontal ligament and alveolar bone, and the shifting trend in various types of tooth movement when using different types of orthodontic devices. Therefore, it is necessary to know specific software for this purpose. CONCLUSIONS: FEM is an important experimental method to answer questions about tooth movement, overcoming the disadvantages of other experimental methods. PMID:25992996

  8. 8th International Conference on Boundary Element Methods

    CERN Document Server

    Brebbia, C

    1986-01-01

    The International Conference on Boundary Element Methods in Engineering was started in 1978 with the following objectives: i) To act as a focus for BE research at a time when the technique wasjust emerging as a powerful tool for engineering analysis. ii) To attract new as weIl as established researchers on Boundary Elements, in order to maintain its vitality and originality. iii) To try to relate the Boundary Element Method to other engineering techniques in an effort to help unify the field of engineering analysis, rather than to contribute to its fragmentation. These objectives were achieved during the last 7 conferences and this meeting - the eighth - has continued to be as innovative and dynamic as any ofthe previous conferences. Another important aim ofthe conference is to encourage the participation of researchers from as many different countries as possible and in this regard it is a policy of the organizers to hold the conference in different locations. It is easy to forget when working on scientific ...

  9. Application of distinct element method of toppling failure of slope

    International Nuclear Information System (INIS)

    Ishida, Tsuyoshi; Hibino, Satoshi; Kitahara, Yoshihiro; Ito, Hiroshi

    1984-01-01

    The authors have pointed out, in the latest report, that DEM (Distinct Element Method) seems to be a very helpful numerical method to examine the stability of fissured rock slopes, in which toppling failure would occur during earthquakes. In this report, the applicability of DEM for such rock slopes is examined through the following comparisons between theoretical results and DEM results, referring Voegele's works (1982): (1) Stability of one block on a slope. (2) Failure of a rock block column composed of 10 same size rectangular blocks. (3) Cable force required to make a slope stable. Through above 3 comparisons, it seems that DEM give the reasonable results. Considering that these problems may not be treated by the other numerical methods such as FEM and so on, so DEM seems to be a very useful method for fissured rock slope analysis. (author)

  10. The nonconforming virtual element method for eigenvalue problems

    Energy Technology Data Exchange (ETDEWEB)

    Gardini, Francesca [Univ. of Pavia (Italy). Dept. of Mathematics; Manzini, Gianmarco [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Vacca, Giuseppe [Univ. of Milano-Bicocca, Milan (Italy). Dept. of Mathematics and Applications

    2018-02-05

    We analyse the nonconforming Virtual Element Method (VEM) for the approximation of elliptic eigenvalue problems. The nonconforming VEM allow to treat in the same formulation the two- and three-dimensional case.We present two possible formulations of the discrete problem, derived respectively by the nonstabilized and stabilized approximation of the L2-inner product, and we study the convergence properties of the corresponding discrete eigenvalue problems. The proposed schemes provide a correct approximation of the spectrum and we prove optimal-order error estimates for the eigenfunctions and the usual double order of convergence of the eigenvalues. Finally we show a large set of numerical tests supporting the theoretical results, including a comparison with the conforming Virtual Element choice.

  11. Simulation of galvanic corrosion using boundary element method

    International Nuclear Information System (INIS)

    Zaifol Samsu; Muhamad Daud; Siti Radiah Mohd Kamaruddin; Nur Ubaidah Saidin; Abdul Aziz Mohamed; Mohd Saari Ripin; Rusni Rejab; Mohd Shariff Sattar

    2011-01-01

    Boundary element method (BEM) is a numerical technique that used for modeling infinite domain as is the case for galvanic corrosion analysis. The use of boundary element analysis system (BEASY) has allowed cathodic protection (CP) interference to be assessed in terms of the normal current density, which is directly proportional to the corrosion rate. This paper was present the analysis of the galvanic corrosion between Aluminium and Carbon Steel in natural sea water. The result of experimental was validated with computer simulation like BEASY program. Finally, it can conclude that the BEASY software is a very helpful tool for future planning before installing any structure, where it gives the possible CP interference on any nearby unprotected metallic structure. (Author)

  12. An adaptive finite element method for steady and transient problems

    International Nuclear Information System (INIS)

    Benner, R.E. Jr.; Davis, H.T.; Scriven, L.E.

    1987-01-01

    Distributing integral error uniformly over variable subdomains, or finite elements, is an attractive criterion by which to subdivide a domain for the Galerkin/finite element method when localized steep gradients and high curvatures are to be resolved. Examples are fluid interfaces, shock fronts and other internal layers, as well as fluid mechanical and other boundary layers, e.g. thin-film states at solid walls. The uniform distribution criterion is developed into an adaptive technique for one-dimensional problems. Nodal positions can be updated simultaneously with nodal values during Newton iteration, but it is usually better to adopt nearly optimal nodal positions during Newton iteration upon nodal values. Three illustrative problems are solved: steady convection with diffusion, gradient theory of fluid wetting on a solid surface and Buckley-Leverett theory of two phase Darcy flow in porous media

  13. Finite element method for computational fluid dynamics with any type of elements; Finite Element Methode zur numerischen Stroemungsberechnung mit beliebigen Elementen

    Energy Technology Data Exchange (ETDEWEB)

    Steibler, P.

    2000-07-01

    The unsteady, turbulent flow is to be calculated in a complex geometry. For this purpose a stabilized finite element formulation in which the same functions for velocity and pressure are used is developed. Thus the process remains independent of the type of elements. This simplifies the application. Above all, it is easier to deal with the boundary conditions. The independency from the elements is also achieved by the extended uzawa-algorithm which uses quadratic functions for velocity and an element-constant pressure. This method is also programmed. In order to produce the unstructured grids, an algorithm is implemented which produces meshes consisting of triangular and tetrahedral elements with flow-dependent adaptation. With standard geometries both calculation methods are compared with results. Finally the flow in a draft tube of a Kaplan turbine is calculated and compared with results from model tests. (orig.) [German] Die instationaere, turbulente Stroemung in einer komplexen Geometrie soll berechnet werden. Dazu wird eine Stabilisierte Finite Element Formulierung entwickelt, bei der die gleichen Ansatzfunktionen fuer Geschwindigkeiten und Druck verwendet werden. Das Verfahren wird damit unabhaengig von der Form der Elemente. Dies vereinfacht die Anwendung. Vor allem wird der Umgang mit den Randbedingungen erleichert. Die Elementunabhaengigkeit erreicht man auch mit dem erweiterten Uzawa-Algorithmus, welcher quadratische Ansatzfunktionen fuer die Geschwindigkeiten und elementweisen konstanten Druck verwendet. Dieses Verfahren wird ebenso implementiert. Zur Erstellung der unstrukturierten Gitter wird ein Algorithmus erzeugt, der Netze aus Dreiecks- und Tetraederelementen erstellt, welche stroemungsabhaengige Groessen besitzen koennen. Anhand einiger Standardgeometrien werden die beiden Berechnungsmethoden mit Ergebnissen aus der Literatur verglichen. Als praxisrelevantes Beispiel wird abschliessend die Stroemung in einem Saugrohr einer Kaplanturbine berechnet

  14. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  15. The Mixed Finite Element Multigrid Method for Stokes Equations

    Science.gov (United States)

    Muzhinji, K.; Shateyi, S.; Motsa, S. S.

    2015-01-01

    The stable finite element discretization of the Stokes problem produces a symmetric indefinite system of linear algebraic equations. A variety of iterative solvers have been proposed for such systems in an attempt to construct efficient, fast, and robust solution techniques. This paper investigates one of such iterative solvers, the geometric multigrid solver, to find the approximate solution of the indefinite systems. The main ingredient of the multigrid method is the choice of an appropriate smoothing strategy. This study considers the application of different smoothers and compares their effects in the overall performance of the multigrid solver. We study the multigrid method with the following smoothers: distributed Gauss Seidel, inexact Uzawa, preconditioned MINRES, and Braess-Sarazin type smoothers. A comparative study of the smoothers shows that the Braess-Sarazin smoothers enhance good performance of the multigrid method. We study the problem in a two-dimensional domain using stable Hood-Taylor Q 2-Q 1 pair of finite rectangular elements. We also give the main theoretical convergence results. We present the numerical results to demonstrate the efficiency and robustness of the multigrid method and confirm the theoretical results. PMID:25945361

  16. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  17. Applications of the discrete element method in mechanical engineering

    International Nuclear Information System (INIS)

    Fleissner, Florian; Gaugele, Timo; Eberhard, Peter

    2007-01-01

    Compared to other fields of engineering, in mechanical engineering, the Discrete Element Method (DEM) is not yet a well known method. Nevertheless, there is a variety of simulation problems where the method has obvious advantages due to its meshless nature. For problems where several free bodies can collide and break after having been largely deformed, the DEM is the method of choice. Neighborhood search and collision detection between bodies as well as the separation of large solids into smaller particles are naturally incorporated in the method. The main DEM algorithm consists of a relatively simple loop that basically contains the three substeps contact detection, force computation and integration. However, there exists a large variety of different algorithms to choose the substeps to compose the optimal method for a given problem. In this contribution, we describe the dynamics of particle systems together with appropriate numerical integration schemes and give an overview over different types of particle interactions that can be composed to adapt the method to fit to a given simulation problem. Surface triangulations are used to model complicated, non-convex bodies in contact with particle systems. The capabilities of the method are finally demonstrated by means of application examples

  18. Generalized multiscale finite element methods. nonlinear elliptic equations

    KAUST Repository

    Efendiev, Yalchin R.; Galvis, Juan; Li, Guanglian; Presho, Michael

    2013-01-01

    In this paper we use the Generalized Multiscale Finite Element Method (GMsFEM) framework, introduced in [26], in order to solve nonlinear elliptic equations with high-contrast coefficients. The proposed solution method involves linearizing the equation so that coarse-grid quantities of previous solution iterates can be regarded as auxiliary parameters within the problem formulation. With this convention, we systematically construct respective coarse solution spaces that lend themselves to either continuous Galerkin (CG) or discontinuous Galerkin (DG) global formulations. Here, we use Symmetric Interior Penalty Discontinuous Galerkin approach. Both methods yield a predictable error decline that depends on the respective coarse space dimension, and we illustrate the effectiveness of the CG and DG formulations by offering a variety of numerical examples. © 2014 Global-Science Press.

  19. Development of experimental methods for measuring fuel elements burnup

    International Nuclear Information System (INIS)

    PEREDA, C; HENRIQUEZ, C; NAVARRO, G; TORRES, H; KLEIN, J; CALDERON, D; MEDEL, J; MUTIS, O; DAIE, J; ITURRIETA, L; LONCOMILLA, M; ZAMBRANO, J; KESTELMAN, A

    2003-01-01

    This paper is a summary of the work carried out during the last two years in fuel burning measurements at RECH-1 for different enrichments, cooling times and burning rates. The measurements were made in two gamma-spectrometric facilities, one is installed in a hot cell and the other inside of the secondary pool of the RECH-1, where the element is under 2 meters of water. The hot cell measurements need at least 100 cooling days because of the problems generated by the transport of highly active fuel elements from the Reactor to the cell. This was the main reason for using the in-pool facility because of its capability to measure the burning of fuel elements without having to wait so long, that is with only 5 cooling days. The accumulated experience in measurements achieved in both facilities and the encouraging results show that this measuring method is reliable. The results agreed well with those obtained using the reactor's physics codes, which was the way they were obtained previously (Cw)

  20. Spectral element method for vector radiative transfer equation

    International Nuclear Information System (INIS)

    Zhao, J.M.; Liu, L.H.; Hsu, P.-F.; Tan, J.Y.

    2010-01-01

    A spectral element method (SEM) is developed to solve polarized radiative transfer in multidimensional participating medium. The angular discretization is based on the discrete-ordinates approach, and the spatial discretization is conducted by spectral element approach. Chebyshev polynomial is used to build basis function on each element. Four various test problems are taken as examples to verify the performance of the SEM. The effectiveness of the SEM is demonstrated. The h and the p convergence characteristics of the SEM are studied. The convergence rate of p-refinement follows the exponential decay trend and is superior to that of h-refinement. The accuracy and efficiency of the higher order approximation in the SEM is well demonstrated for the solution of the VRTE. The predicted angular distribution of brightness temperature and Stokes vector by the SEM agree very well with the benchmark solutions in references. Numerical results show that the SEM is accurate, flexible and effective to solve multidimensional polarized radiative transfer problems.

  1. A Finite Element Method for Simulation of Compressible Cavitating Flows

    Science.gov (United States)

    Shams, Ehsan; Yang, Fan; Zhang, Yu; Sahni, Onkar; Shephard, Mark; Oberai, Assad

    2016-11-01

    This work focuses on a novel approach for finite element simulations of multi-phase flows which involve evolving interface with phase change. Modeling problems, such as cavitation, requires addressing multiple challenges, including compressibility of the vapor phase, interface physics caused by mass, momentum and energy fluxes. We have developed a mathematically consistent and robust computational approach to address these problems. We use stabilized finite element methods on unstructured meshes to solve for the compressible Navier-Stokes equations. Arbitrary Lagrangian-Eulerian formulation is used to handle the interface motions. Our method uses a mesh adaptation strategy to preserve the quality of the volumetric mesh, while the interface mesh moves along with the interface. The interface jump conditions are accurately represented using a discontinuous Galerkin method on the conservation laws. Condensation and evaporation rates at the interface are thermodynamically modeled to determine the interface velocity. We will present initial results on bubble cavitation the behavior of an attached cavitation zone in a separated boundary layer. We acknowledge the support from Army Research Office (ARO) under ARO Grant W911NF-14-1-0301.

  2. Strength Analysis on Ship Ladder Using Finite Element Method

    Science.gov (United States)

    Budianto; Wahyudi, M. T.; Dinata, U.; Ruddianto; Eko P., M. M.

    2018-01-01

    In designing the ship’s structure, it should refer to the rules in accordance with applicable classification standards. In this case, designing Ladder (Staircase) on a Ferry Ship which is set up, it must be reviewed based on the loads during ship operations, either during sailing or at port operations. The classification rules in ship design refer to the calculation of the structure components described in Classification calculation method and can be analysed using the Finite Element Method. Classification Regulations used in the design of Ferry Ships used BKI (Bureau of Classification Indonesia). So the rules for the provision of material composition in the mechanical properties of the material should refer to the classification of the used vessel. The analysis in this structure used program structure packages based on Finite Element Method. By using structural analysis on Ladder (Ladder), it obtained strength and simulation structure that can withstand load 140 kg both in static condition, dynamic, and impact. Therefore, the result of the analysis included values of safety factors in the ship is to keep the structure safe but the strength of the structure is not excessive.

  3. Multi-element probabilistic collocation method in high dimensions

    International Nuclear Information System (INIS)

    Foo, Jasmine; Karniadakis, George Em

    2010-01-01

    We combine multi-element polynomial chaos with analysis of variance (ANOVA) functional decomposition to enhance the convergence rate of polynomial chaos in high dimensions and in problems with low stochastic regularity. Specifically, we employ the multi-element probabilistic collocation method MEPCM and so we refer to the new method as MEPCM-A. We investigate the dependence of the convergence of MEPCM-A on two decomposition parameters, the polynomial order μ and the effective dimension ν, with ν<< N, and N the nominal dimension. Numerical tests for multi-dimensional integration and for stochastic elliptic problems suggest that ν≥μ for monotonic convergence of the method. We also employ MEPCM-A to obtain error bars for the piezometric head at the Hanford nuclear waste site under stochastic hydraulic conductivity conditions. Finally, we compare the cost of MEPCM-A against Monte Carlo in several hundred dimensions, and we find MEPCM-A to be more efficient for up to 600 dimensions for a specific multi-dimensional integration problem involving a discontinuous function.

  4. Seakeeping with the semi-Lagrangian particle finite element method

    Science.gov (United States)

    Nadukandi, Prashanth; Servan-Camas, Borja; Becker, Pablo Agustín; Garcia-Espinosa, Julio

    2017-07-01

    The application of the semi-Lagrangian particle finite element method (SL-PFEM) for the seakeeping simulation of the wave adaptive modular vehicle under spray generating conditions is presented. The time integration of the Lagrangian advection is done using the explicit integration of the velocity and acceleration along the streamlines (X-IVAS). Despite the suitability of the SL-PFEM for the considered seakeeping application, small time steps were needed in the X-IVAS scheme to control the solution accuracy. A preliminary proposal to overcome this limitation of the X-IVAS scheme for seakeeping simulations is presented.

  5. Storage system and method for spent fuel elements

    International Nuclear Information System (INIS)

    Queiser, H.; Eckardt, B.

    1981-01-01

    The proposal concerns an additional protection against leakage of a FE-transport container for interim storage of spent fuel elements. The gastight container has a second cover placed at a short distance from the first cover. The intermediate hollow space can be connected with a measuring system which indicates if part of the trace gas (mostly helium) added as indicator has escaped from the container due to leakage. The description explains the method and the assembly of required lines and measuring points etc. (UWI) [de

  6. Piezoelectric Analysis of Saw Sensor Using Finite Element Method

    Directory of Open Access Journals (Sweden)

    Vladimír KUTIŠ

    2013-06-01

    Full Text Available In this contribution modeling and simulation of surface acoustic waves (SAW sensor using finite element method will be presented. SAW sensor is made from piezoelectric GaN layer and SiC substrate. Two different analysis types are investigated - modal and transient. Both analyses are only 2D. The goal of modal analysis, is to determine the eigenfrequency of SAW, which is used in following transient analysis. In transient analysis, wave propagation in SAW sensor is investigated. Both analyses were performed using FEM code ANSYS.

  7. Methods for removing transuranic elements from waste solutions

    International Nuclear Information System (INIS)

    Slater, S.A.; Chamberlain, D.B.; Connor, C.; Sedlet, J.; Srinivasan, B.; Vandegrift, G.F.

    1994-11-01

    This report outlines a treatment scheme for separating and concentrating the transuranic (TRU) elements present in aqueous waste solutions stored at Argonne National Laboratory (ANL). The treatment method selected is carrier precipitation. Potential carriers will be evaluated in future laboratory work, beginning with ferric hydroxide and magnetite. The process will result in a supernatant with alpha activity low enough that it can be treated in the existing evaporator/concentrator at ANL. The separated TRU waste will be packaged for shipment to the Waste Isolation Pilot Plant

  8. Finite-element method modeling of hyper-frequency structures

    International Nuclear Information System (INIS)

    Zhang, Min

    1990-01-01

    The modelization of microwave propagation problems, including Eigen-value problem and scattering problem, is accomplished by the finite element method with vector functional and scalar functional. For Eigen-value problem, propagation modes in waveguides and resonant modes in cavities can be calculated in a arbitrarily-shaped structure with inhomogeneous material. Several microwave structures are resolved in order to verify the program. One drawback associated with the vector functional is the appearance of spurious or non-physical solutions. A penalty function method has been introduced to reduce spurious' solutions. The adaptive charge method is originally proposed in this thesis to resolve waveguide scattering problem. This method, similar to VSWR measuring technique, is more efficient to obtain the reflection coefficient than the matrix method. Two waveguide discontinuity structures are calculated by the two methods and their results are compared. The adaptive charge method is also applied to a microwave plasma excitor. It allows us to understand the role of different physical parameters of excitor in the coupling of microwave energy to plasma mode and the mode without plasma. (author) [fr

  9. Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

    International Nuclear Information System (INIS)

    Kavetskyy, T.; Vakiv, M.; Shpotyuk, O.

    2007-01-01

    A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge 15.8 As 21 S 63.2 glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition

  10. Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

    Energy Technology Data Exchange (ETDEWEB)

    Kavetskyy, T.; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)], E-mail: shpotyuk@novas.lviv.ua

    2007-04-15

    A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge{sub 15.8}As{sub 21}S{sub 63.2} glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition.

  11. The current matrix elements from HAL QCD method

    Science.gov (United States)

    Watanabe, Kai; Ishii, Noriyoshi

    2018-03-01

    HAL QCD method is a method to construct a potential (HAL QCD potential) that reproduces the NN scattering phase shift faithful to the QCD. The HAL QCD potential is obtained from QCD by eliminating the degrees of freedom of quarks and gluons and leaving only two particular hadrons. Therefor, in the effective quantum mechanics of two nucleons defined by HAL QCD potential, the conserved current consists not only of the nucleon current but also an extra current originating from the potential (two-body current). Though the form of the two-body current is closely related to the potential, it is not straight forward to extract the former from the latter. In this work, we derive the the current matrix element formula in the quantum mechanics defined by the HAL QCD potential. As a first step, we focus on the non-relativistic case. To give an explicit example, we consider a second quantized non-relativistic two-channel coupling model which we refer to as the original model. From the original model, the HAL QCD potential for the open channel is constructed by eliminating the closed channel in the elastic two-particle scattering region. The current matrix element formula is derived by demanding the effective quantum mechanics defined by the HAL QCD potential to respond to the external field in the same way as the original two-channel coupling model.

  12. Mixed Generalized Multiscale Finite Element Methods and Applications

    KAUST Repository

    Chung, Eric T.

    2015-03-03

    In this paper, we present a mixed generalized multiscale finite element method (GMsFEM) for solving flow in heterogeneous media. Our approach constructs multiscale basis functions following a GMsFEM framework and couples these basis functions using a mixed finite element method, which allows us to obtain a mass conservative velocity field. To construct multiscale basis functions for each coarse edge, we design a snapshot space that consists of fine-scale velocity fields supported in a union of two coarse regions that share the common interface. The snapshot vectors have zero Neumann boundary conditions on the outer boundaries, and we prescribe their values on the common interface. We describe several spectral decompositions in the snapshot space motivated by the analysis. In the paper, we also study oversampling approaches that enhance the accuracy of mixed GMsFEM. A main idea of oversampling techniques is to introduce a small dimensional snapshot space. We present numerical results for two-phase flow and transport, without updating basis functions in time. Our numerical results show that one can achieve good accuracy with a few basis functions per coarse edge if one selects appropriate offline spaces. © 2015 Society for Industrial and Applied Mathematics.

  13. Adaptive Finite Element Methods for Elliptic Problems with Discontinuous Coefficients

    KAUST Repository

    Bonito, Andrea; DeVore, Ronald A.; Nochetto, Ricardo H.

    2013-01-01

    Elliptic PDEs with discontinuous diffusion coefficients occur in application domains such as diffusions through porous media, electromagnetic field propagation on heterogeneous media, and diffusion processes on rough surfaces. The standard approach to numerically treating such problems using finite element methods is to assume that the discontinuities lie on the boundaries of the cells in the initial triangulation. However, this does not match applications where discontinuities occur on curves, surfaces, or manifolds, and could even be unknown beforehand. One of the obstacles to treating such discontinuity problems is that the usual perturbation theory for elliptic PDEs assumes bounds for the distortion of the coefficients in the L∞ norm and this in turn requires that the discontinuities are matched exactly when the coefficients are approximated. We present a new approach based on distortion of the coefficients in an Lq norm with q < ∞ which therefore does not require the exact matching of the discontinuities. We then use this new distortion theory to formulate new adaptive finite element methods (AFEMs) for such discontinuity problems. We show that such AFEMs are optimal in the sense of distortion versus number of computations, and report insightful numerical results supporting our analysis. © 2013 Societ y for Industrial and Applied Mathematics.

  14. Spectral Element Method for the Simulation of Unsteady Compressible Flows

    Science.gov (United States)

    Diosady, Laslo Tibor; Murman, Scott M.

    2013-01-01

    This work uses a discontinuous-Galerkin spectral-element method (DGSEM) to solve the compressible Navier-Stokes equations [1{3]. The inviscid ux is computed using the approximate Riemann solver of Roe [4]. The viscous fluxes are computed using the second form of Bassi and Rebay (BR2) [5] in a manner consistent with the spectral-element approximation. The method of lines with the classical 4th-order explicit Runge-Kutta scheme is used for time integration. Results for polynomial orders up to p = 15 (16th order) are presented. The code is parallelized using the Message Passing Interface (MPI). The computations presented in this work are performed using the Sandy Bridge nodes of the NASA Pleiades supercomputer at NASA Ames Research Center. Each Sandy Bridge node consists of 2 eight-core Intel Xeon E5-2670 processors with a clock speed of 2.6Ghz and 2GB per core memory. On a Sandy Bridge node the Tau Benchmark [6] runs in a time of 7.6s.

  15. An adaptative finite element method for turbulent flow simulations

    International Nuclear Information System (INIS)

    Arnoux-Guisse, F.; Bonnin, O.; Leal de Sousa, L.; Nicolas, G.

    1995-05-01

    After outlining the space and time discretization methods used in the N3S thermal hydraulic code developed at EDF/NHL, we describe the possibilities of the peripheral version, the Adaptative Mesh, which comprises two separate parts: the error indicator computation and the development of a module subdividing elements usable by the solid dynamics code ASTER and the electromagnetism code TRIFOU also developed by R and DD. The error indicators implemented in N3S are described. They consist of a projection indicator quantifying the space error in laminar or turbulent flow calculations and a Navier-Stokes residue indicator calculated on each element. The method for subdivision of triangles into four sub-triangles and tetrahedra into eight sub-tetrahedra is then presented with its advantages and drawbacks. It is illustrated by examples showing the efficiency of the module. The last concerns the 2 D case of flow behind a backward-facing step. (authors). 9 refs., 5 figs., 1 tab

  16. Heat Conduction Analysis Using Semi Analytical Finite Element Method

    International Nuclear Information System (INIS)

    Wargadipura, A. H. S.

    1997-01-01

    Heat conduction problems are very often found in science and engineering fields. It is of accrual importance to determine quantitative descriptions of this important physical phenomena. This paper discusses the development and application of a numerical formulation and computation that can be used to analyze heat conduction problems. The mathematical equation which governs the physical behaviour of heat conduction is in the form of second order partial differential equations. The numerical resolution used in this paper is performed using the finite element method and Fourier series, which is known as semi-analytical finite element methods. The numerical solution results in simultaneous algebraic equations which is solved using the Gauss elimination methodology. The computer implementation is carried out using FORTRAN language. In the final part of the paper, a heat conduction problem in a rectangular plate domain with isothermal boundary conditions in its edge is solved to show the application of the computer program developed and also a comparison with analytical solution is discussed to assess the accuracy of the numerical solution obtained

  17. hp Spectral element methods for three dimensional elliptic problems

    Indian Academy of Sciences (India)

    This is the first of a series of papers devoted to the study of h-p spec- .... element functions defined on mesh elements in the new system of variables with a uni- ... the spectral element functions on these elements and give construction of the stability .... By Hm( ), we denote the usual Sobolev space of integer order m ≥ 0 ...

  18. Perfectly matched layer for the time domain finite element method

    International Nuclear Information System (INIS)

    Rylander, Thomas; Jin Jianming

    2004-01-01

    A new perfectly matched layer (PML) formulation for the time domain finite element method is described and tested for Maxwell's equations. In particular, we focus on the time integration scheme which is based on Galerkin's method with a temporally piecewise linear expansion of the electric field. The time stepping scheme is constructed by forming a linear combination of exact and trapezoidal integration applied to the temporal weak form, which reduces to the well-known Newmark scheme in the case without PML. Extensive numerical tests on scattering from infinitely long metal cylinders in two dimensions show good accuracy and no signs of instabilities. For a circular cylinder, the proposed scheme indicates the expected second order convergence toward the analytic solution and gives less than 2% root-mean-square error in the bistatic radar cross section (RCS) for resolutions with more than 10 points per wavelength. An ogival cylinder, which has sharp corners supporting field singularities, shows similar accuracy in the monostatic RCS

  19. A proposal for a determination method of element division on an analytical model for finite element elastic waves propagation analysis

    International Nuclear Information System (INIS)

    Ishida, Hitoshi; Meshii, Toshiyuki

    2010-01-01

    This study proposes an element size selection method named the 'Impact-Meshing (IM) method' for a finite element waves propagation analysis model, which is characterized by (1) determination of element division of the model with strain energy in the whole model, (2) static analysis (dynamic analysis in a single time step) with boundary conditions which gives a maximum change of displacement in the time increment and inertial (impact) force caused by the displacement change. In this paper, an example of application of the IM method to 3D ultrasonic wave propagation problem in an elastic solid is described. These examples showed an analysis result with a model determined by the IM method was convergence and calculation time for determination of element subdivision was reduced to about 1/6 by the IM Method which did not need determination of element subdivision by a dynamic transient analysis with 100 time steps. (author)

  20. Generalized multiscale finite element methods (GMsFEM)

    KAUST Repository

    Efendiev, Yalchin R.; Galvis, Juan; Hou, Thomasyizhao

    2013-01-01

    In this paper, we propose a general approach called Generalized Multiscale Finite Element Method (GMsFEM) for performing multiscale simulations for problems without scale separation over a complex input space. As in multiscale finite element methods (MsFEMs), the main idea of the proposed approach is to construct a small dimensional local solution space that can be used to generate an efficient and accurate approximation to the multiscale solution with a potentially high dimensional input parameter space. In the proposed approach, we present a general procedure to construct the offline space that is used for a systematic enrichment of the coarse solution space in the online stage. The enrichment in the online stage is performed based on a spectral decomposition of the offline space. In the online stage, for any input parameter, a multiscale space is constructed to solve the global problem on a coarse grid. The online space is constructed via a spectral decomposition of the offline space and by choosing the eigenvectors corresponding to the largest eigenvalues. The computational saving is due to the fact that the construction of the online multiscale space for any input parameter is fast and this space can be re-used for solving the forward problem with any forcing and boundary condition. Compared with the other approaches where global snapshots are used, the local approach that we present in this paper allows us to eliminate unnecessary degrees of freedom on a coarse-grid level. We present various examples in the paper and some numerical results to demonstrate the effectiveness of our method. © 2013 Elsevier Inc.

  1. Generalized multiscale finite element methods (GMsFEM)

    KAUST Repository

    Efendiev, Yalchin R.

    2013-10-01

    In this paper, we propose a general approach called Generalized Multiscale Finite Element Method (GMsFEM) for performing multiscale simulations for problems without scale separation over a complex input space. As in multiscale finite element methods (MsFEMs), the main idea of the proposed approach is to construct a small dimensional local solution space that can be used to generate an efficient and accurate approximation to the multiscale solution with a potentially high dimensional input parameter space. In the proposed approach, we present a general procedure to construct the offline space that is used for a systematic enrichment of the coarse solution space in the online stage. The enrichment in the online stage is performed based on a spectral decomposition of the offline space. In the online stage, for any input parameter, a multiscale space is constructed to solve the global problem on a coarse grid. The online space is constructed via a spectral decomposition of the offline space and by choosing the eigenvectors corresponding to the largest eigenvalues. The computational saving is due to the fact that the construction of the online multiscale space for any input parameter is fast and this space can be re-used for solving the forward problem with any forcing and boundary condition. Compared with the other approaches where global snapshots are used, the local approach that we present in this paper allows us to eliminate unnecessary degrees of freedom on a coarse-grid level. We present various examples in the paper and some numerical results to demonstrate the effectiveness of our method. © 2013 Elsevier Inc.

  2. Multiscale Finite Element Methods for Flows on Rough Surfaces

    KAUST Repository

    Efendiev, Yalchin

    2013-01-01

    In this paper, we present the Multiscale Finite Element Method (MsFEM) for problems on rough heterogeneous surfaces. We consider the diffusion equation on oscillatory surfaces. Our objective is to represent small-scale features of the solution via multiscale basis functions described on a coarse grid. This problem arises in many applications where processes occur on surfaces or thin layers. We present a unified multiscale finite element framework that entails the use of transformations that map the reference surface to the deformed surface. The main ingredients of MsFEM are (1) the construction of multiscale basis functions and (2) a global coupling of these basis functions. For the construction of multiscale basis functions, our approach uses the transformation of the reference surface to a deformed surface. On the deformed surface, multiscale basis functions are defined where reduced (1D) problems are solved along the edges of coarse-grid blocks to calculate nodalmultiscale basis functions. Furthermore, these basis functions are transformed back to the reference configuration. We discuss the use of appropriate transformation operators that improve the accuracy of the method. The method has an optimal convergence if the transformed surface is smooth and the image of the coarse partition in the reference configuration forms a quasiuniform partition. In this paper, we consider such transformations based on harmonic coordinates (following H. Owhadi and L. Zhang [Comm. Pure and Applied Math., LX(2007), pp. 675-723]) and discuss gridding issues in the reference configuration. Numerical results are presented where we compare the MsFEM when two types of deformations are used formultiscale basis construction. The first deformation employs local information and the second deformation employs a global information. Our numerical results showthat one can improve the accuracy of the simulations when a global information is used. © 2013 Global-Science Press.

  3. Finite element method for neutron diffusion problems in hexagonal geometry

    International Nuclear Information System (INIS)

    Wei, T.Y.C.; Hansen, K.F.

    1975-06-01

    The use of the finite element method for solving two-dimensional static neutron diffusion problems in hexagonal reactor configurations is considered. It is investigated as a possible alternative to the low-order finite difference method. Various piecewise polynomial spaces are examined for their use in hexagonal problems. The central questions which arise in the design of these spaces are the degree of incompleteness permissible and the advantages of using a low-order space fine-mesh approach over that of a high-order space coarse-mesh one. There is also the question of the degree of smoothness required. Two schemes for the construction of spaces are described and a number of specific spaces, constructed with the questions outlined above in mind, are presented. They range from a complete non-Lagrangian, non-Hermite quadratic space to an incomplete ninth order space. Results are presented for two-dimensional problems typical of a small high temperature gas-cooled reactor. From the results it is concluded that the space used should at least include the complete linear one. Complete spaces are to be preferred to totally incomplete ones. Once function continuity is imposed any additional degree of smoothness is of secondary importance. For flux shapes typical of the small high temperature gas-cooled reactor the linear space fine-mesh alternative is to be preferred to the perturbation quadratic space coarse-mesh one and the low-order finite difference method is to be preferred over both finite element schemes

  4. Hybrid finite difference/finite element immersed boundary method.

    Science.gov (United States)

    E Griffith, Boyce; Luo, Xiaoyu

    2017-12-01

    The immersed boundary method is an approach to fluid-structure interaction that uses a Lagrangian description of the structural deformations, stresses, and forces along with an Eulerian description of the momentum, viscosity, and incompressibility of the fluid-structure system. The original immersed boundary methods described immersed elastic structures using systems of flexible fibers, and even now, most immersed boundary methods still require Lagrangian meshes that are finer than the Eulerian grid. This work introduces a coupling scheme for the immersed boundary method to link the Lagrangian and Eulerian variables that facilitates independent spatial discretizations for the structure and background grid. This approach uses a finite element discretization of the structure while retaining a finite difference scheme for the Eulerian variables. We apply this method to benchmark problems involving elastic, rigid, and actively contracting structures, including an idealized model of the left ventricle of the heart. Our tests include cases in which, for a fixed Eulerian grid spacing, coarser Lagrangian structural meshes yield discretization errors that are as much as several orders of magnitude smaller than errors obtained using finer structural meshes. The Lagrangian-Eulerian coupling approach developed in this work enables the effective use of these coarse structural meshes with the immersed boundary method. This work also contrasts two different weak forms of the equations, one of which is demonstrated to be more effective for the coarse structural discretizations facilitated by our coupling approach. © 2017 The Authors International  Journal  for  Numerical  Methods  in  Biomedical  Engineering Published by John Wiley & Sons Ltd.

  5. A new method for wafer quality monitoring using semiconductor process big data

    Science.gov (United States)

    Sohn, Younghoon; Lee, Hyun; Yang, Yusin; Jun, Chungsam

    2017-03-01

    In this paper we proposed a new semiconductor quality monitoring methodology - Process Sensor Log Analysis (PSLA) - using process sensor data for the detection of wafer defectivity and quality monitoring. We developed exclusive key parameter selection algorithm and user friendly system which is able to handle large amount of big data very effectively. Several production wafers were selected and analyzed based on the risk analysis of process driven defects, for example alignment quality of process layers. Thickness of spin-coated material can be measured using PSLA without conventional metrology process. In addition, chip yield impact was verified by matching key parameter changes with electrical die sort (EDS) fail maps at the end of the production step. From this work, we were able to determine that process robustness and product yields could be improved by monitoring the key factors in the process big data.

  6. Methods and apparatuses for detection of radiation with semiconductor image sensors

    Science.gov (United States)

    Cogliati, Joshua Joseph

    2018-04-10

    A semiconductor image sensor is repeatedly exposed to high-energy photons while a visible light obstructer is in place to block visible light from impinging on the sensor to generate a set of images from the exposures. A composite image is generated from the set of images with common noise substantially removed so the composite image includes image information corresponding to radiated pixels that absorbed at least some energy from the high-energy photons. The composite image is processed to determine a set of bright points in the composite image, each bright point being above a first threshold. The set of bright points is processed to identify lines with two or more bright points that include pixels therebetween that are above a second threshold and identify a presence of the high-energy particles responsive to a number of lines.

  7. Synthesis and characterization of metal oxide semiconductors by a facile co-electroplating-annealing method and formation of ZnO/CuO pn heterojunctions with rectifying behavior

    Science.gov (United States)

    Turkdogan, Sunay; Kilic, Bayram

    2018-01-01

    We have developed a unique growth method and demonstrated the growth of CuO and ZnO semiconductor materials and the fabrication of their pn heterojunctions in ambient atmosphere. The pn heterojunctions were constructed using inherently p-type CuO and inherently n-type ZnO materials. Both p- and n-type semiconductors and pn heterojunctions were prepared using a simple but versatile growth method that relies on the transformation of electroplated Cu and Zn metals into CuO and ZnO semiconductors, respectively and is capable of a large-scale production desired in most of the applications. The structural, chemical, optical and electrical properties of the materials and junctions were investigated using various characterization methods and the results show that our growth method, materials and devices are quite promising to be utilized for various applications including but not limited to solar cells, gas/humidity sensors and photodetectors.

  8. induction motor, unbalance, electrical loss, finite element method.

    Directory of Open Access Journals (Sweden)

    Camilo Andrés Cortés

    2008-09-01

    Full Text Available This paper shows the pattern of a 7.5 kW squirrel-cage induction motor’s electrical loss in balanced and unbalanced conditions, modelling the motor using the finite element method and comparing the results with experimental data obtained in the laboratory for the selected motor. Magnetic flux density variation was analysed at four places in the machine. The results so obtained sho- wed that the undervoltage unbalanced condition was the most critical from the motor’s total loss point of view. Regarding varia- tion of loss in parts of the motor, a constant iron loss pattern was found when the load was changed for each type of voltage supply and that the place where the loss had the largest rise was in the machine’s rotor.

  9. Application of distinct element method to toppling failure of slopes

    International Nuclear Information System (INIS)

    Ishida, Tsuyoshi; Hibino, Satoshi; Kitahara, Yoshihiro; Asai, Yoshiyuki.

    1985-01-01

    Recently, the stability of slopes during earthquakes has become to be an important engineering problem, especially in case of the earthquake-proof design of nuclear power plants. But, for fissured rock slopes, some problems are remained unresolved, because they can not be treated as continua. The authors have been investigating toppling failure of slopes, from a point of view which regards a fissured rock mass as an assemblage of rigid blocks. DEM (Distinct Element Method) proposed by Cundall (1974) seems to be very helpful to such a investigation. So, in this paper, the applicability of DEM to toppling failure of slopes is examined through the comparison between DEM results and theoretical or experimental results using 3 simple models. (author)

  10. A finite-elements method for turbulent flow analysis

    International Nuclear Information System (INIS)

    Autret, A.

    1986-03-01

    The work discussed here covers turbulent flow calculations using GALERKIN's finite-element method. Turbulence effects on the mean field are taken into account by the k-epsilon model with two evolution equations: one for the kinetic energy of the turbulence, and one for the energy dissipation rate. The wall zone is covered by wall laws, and by REICHARDT's law in particular. A law is advanced for the epsilon input profile, and a numerical solution is proposed for the physically aberrant values of k and epsilon generated by the model. Single-equation models are reviewed comparatively with the k-epsilon model. A comparison between calculated and analytical solutions or calculated and experimental results is presented for decreasing turbulence behind a grid, for the flow between parallel flat plates with three REYNOLDS numbers, and for backward facing step. This part contains graphs and curves corresponding to results of the calculations presented in part one [fr

  11. A mixed finite element method for nonlinear diffusion equations

    KAUST Repository

    Burger, Martin; Carrillo, José ; Wolfram, Marie-Therese

    2010-01-01

    We propose a mixed finite element method for a class of nonlinear diffusion equations, which is based on their interpretation as gradient flows in optimal transportation metrics. We introduce an appropriate linearization of the optimal transport problem, which leads to a mixed symmetric formulation. This formulation preserves the maximum principle in case of the semi-discrete scheme as well as the fully discrete scheme for a certain class of problems. In addition solutions of the mixed formulation maintain exponential convergence in the relative entropy towards the steady state in case of a nonlinear Fokker-Planck equation with uniformly convex potential. We demonstrate the behavior of the proposed scheme with 2D simulations of the porous medium equations and blow-up questions in the Patlak-Keller-Segel model. © American Institute of Mathematical Sciences.

  12. A 3D Finite Element Method for Flexible Multibody Systems

    International Nuclear Information System (INIS)

    Gerstmayr, Johannes; Schoeberl, Joachim

    2006-01-01

    An efficient finite element (FE) formulation for the simulation of multibody systems is derived from Hamilton's principle. According to the classical assumptions of multibody systems, a large rotation formulation has been chosen, where large rotations and large displacements, but only small deformations of the single bodies are taken into account. The strain tensor is linearized with respect to a co-rotated frame. The present approach uses absolute coordinates for the degrees of freedom and forms an alternative to the floating frame of reference formulation that is based on relative coordinates and describes deformation with respect to a co-rotated frame. Due to the modified strain tensor, the present formulation distinguishes significantly from standard nodal based nonlinear FE methods. Constraints are defined in integral form for every pair of surfaces of two bodies. This leads to a small number of constraint equations and avoids artificial stress singularities. The resulting mass and stiffness matrices are constant apart from a transformation based on a single rotation matrix for each body. The particular structure of this transformation allows to prevent from the usually expensive factorization of the system Jacobian within implicit time--integration methods. The present method has been implemented and tested with the FE-package NGSolve and specific 3D examples are verified with a standard beam formulation

  13. Novel TMS coils designed using an inverse boundary element method

    Science.gov (United States)

    Cobos Sánchez, Clemente; María Guerrero Rodriguez, Jose; Quirós Olozábal, Ángel; Blanco-Navarro, David

    2017-01-01

    In this work, a new method to design TMS coils is presented. It is based on the inclusion of the concept of stream function of a quasi-static electric current into a boundary element method. The proposed TMS coil design approach is a powerful technique to produce stimulators of arbitrary shape, and remarkably versatile as it permits the prototyping of many different performance requirements and constraints. To illustrate the power of this approach, it has been used for the design of TMS coils wound on rectangular flat, spherical and hemispherical surfaces, subjected to different constraints, such as minimum stored magnetic energy or power dissipation. The performances of such coils have been additionally described; and the torque experienced by each stimulator in the presence of a main magnetic static field have theoretically found in order to study the prospect of using them to perform TMS and fMRI concurrently. The obtained results show that described method is an efficient tool for the design of TMS stimulators, which can be applied to a wide range of coil geometries and performance requirements.

  14. Spectral Analysis of Large Finite Element Problems by Optimization Methods

    Directory of Open Access Journals (Sweden)

    Luca Bergamaschi

    1994-01-01

    Full Text Available Recently an efficient method for the solution of the partial symmetric eigenproblem (DACG, deflated-accelerated conjugate gradient was developed, based on the conjugate gradient (CG minimization of successive Rayleigh quotients over deflated subspaces of decreasing size. In this article four different choices of the coefficient βk required at each DACG iteration for the computation of the new search direction Pk are discussed. The “optimal” choice is the one that yields the same asymptotic convergence rate as the CG scheme applied to the solution of linear systems. Numerical results point out that the optimal βk leads to a very cost effective algorithm in terms of CPU time in all the sample problems presented. Various preconditioners are also analyzed. It is found that DACG using the optimal βk and (LLT−1 as a preconditioner, L being the incomplete Cholesky factor of A, proves a very promising method for the partial eigensolution. It appears to be superior to the Lanczos method in the evaluation of the 40 leftmost eigenpairs of five finite element problems, and particularly for the largest problem, with size equal to 4560, for which the speed gain turns out to fall between 2.5 and 6.0, depending on the eigenpair level.

  15. Measurement of glomerular filtration rate (GFR) with 99mTc-DTPA and semiconductors minidetectors: further validation of the method

    International Nuclear Information System (INIS)

    Mahlstedt, J.; Muehlbauer, J.; Schrott, K.H.; Wolf, F.

    1982-01-01

    A technique measuring external radiation with semiconductor minidetectors (SCM) by use of a portable solid state memory after bolus injection of 1mCi 99mTc-DTPA is described. The correlation of the calculated clearances to plasma creatinine levels and to endogenous creatinine clearance as well is satisfactory. This new technique is compared with a standard steady state technique (GFR-SS) using 51 Cr-EDTA. GFR-SCM is strongly correlated to GFR-SS as standard method, therefore the data provides substantial evidence that GFR-SCM is a reliable method of GFR measurement. The advantages are: fast availability of the test result especially when calculated by use of a minicomputer; ease of performance in routine work; convenience for the patient without need of compliance and low costs for the detector system

  16. SEMICONDUCTOR INTEGRATED CIRCUITS: A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

    Science.gov (United States)

    Jizhi, Liu; Xingbi, Chen

    2009-12-01

    A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.

  17. Reactor calculation in coarse mesh by finite element method applied to matrix response method

    International Nuclear Information System (INIS)

    Nakata, H.

    1982-01-01

    The finite element method is applied to the solution of the modified formulation of the matrix-response method aiming to do reactor calculations in coarse mesh. Good results are obtained with a short running time. The method is applicable to problems where the heterogeneity is predominant and to problems of evolution in coarse meshes where the burnup is variable in one same coarse mesh, making the cross section vary spatially with the evolution. (E.G.) [pt

  18. Proposal for element size and time increment selection guideline by 3-D finite element method for elastic waves propagation analysis

    International Nuclear Information System (INIS)

    Ishida, Hitoshi; Meshii, Toshiyuki

    2008-01-01

    This paper proposes a guideline for selection of element size and time increment by 3-D finite element method, which is applied to elastic wave propagation analysis for a long distance of a large structure. An element size and a time increment are determined by quantitative evaluation of strain, which must be 0 on the analysis model with a uniform motion, caused by spatial and time discretization. (author)

  19. Method of mounting filter elements and mounting therefor

    International Nuclear Information System (INIS)

    Karelin, J.; Neumann, G.M.

    1981-01-01

    A process for the insertion and exchange of the filter elements for suspended matter is performed from the clean-air-side. During the insertion of a filter element, a plastic tube (Which encircles the circumference of the filter element and which exceeds in its length the layer thickness of the filter element several times) is tightly connected in its middle section with the side walls, which side walls form a border around the filter element; and then the open end of the plastic tube, which faces the frame, is connected by way of a tight fit with a ring, which is actually known and which surrounds the orifice of the frame into which the filter element is inserted. The filter element is connected with the frame by means of tightening devices, and the outer free end of the tube is turned inside out and around the filter element for the purpose of unhindered air passage through the filter layer, that during the exchange of the contaminated filter element, the outer open end of the tube is heat sealed. The filter element is disconnected and removed from the frame by flipping down of the tightening devices, and the tube is heat sealed in the section between the filter element and the frame, and, that during the insertion of a new filter element, a new tube is attached by way of tight fitting to the ring of the frame , which tube is at its middle section tightly connected with the filter element, and which tube is attached to the ring of the frame in an actually known by overlapping of the heat-sealed tube rest. The tube rest is pulled onto the new tube and pulled off the ring, and the filter element is tightly connected with the frame by means of the tightening devices

  20. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  1. Topology optimization for three-dimensional electromagnetic waves using an edge element-based finite-element method.

    Science.gov (United States)

    Deng, Yongbo; Korvink, Jan G

    2016-05-01

    This paper develops a topology optimization procedure for three-dimensional electromagnetic waves with an edge element-based finite-element method. In contrast to the two-dimensional case, three-dimensional electromagnetic waves must include an additional divergence-free condition for the field variables. The edge element-based finite-element method is used to both discretize the wave equations and enforce the divergence-free condition. For wave propagation described in terms of the magnetic field in the widely used class of non-magnetic materials, the divergence-free condition is imposed on the magnetic field. This naturally leads to a nodal topology optimization method. When wave propagation is described using the electric field, the divergence-free condition must be imposed on the electric displacement. In this case, the material in the design domain is assumed to be piecewise homogeneous to impose the divergence-free condition on the electric field. This results in an element-wise topology optimization algorithm. The topology optimization problems are regularized using a Helmholtz filter and a threshold projection method and are analysed using a continuous adjoint method. In order to ensure the applicability of the filter in the element-wise topology optimization version, a regularization method is presented to project the nodal into an element-wise physical density variable.

  2. Numerical simulation for cracks detection using the finite elements method

    Directory of Open Access Journals (Sweden)

    S Bennoud

    2016-09-01

    Full Text Available The means of detection must ensure controls either during initial construction, or at the time of exploitation of all parts. The Non destructive testing (NDT gathers the most widespread methods for detecting defects of a part or review the integrity of a structure. In the areas of advanced industry (aeronautics, aerospace, nuclear …, assessing the damage of materials is a key point to control durability and reliability of parts and materials in service. In this context, it is necessary to quantify the damage and identify the different mechanisms responsible for the progress of this damage. It is therefore essential to characterize materials and identify the most sensitive indicators attached to damage to prevent their destruction and use them optimally. In this work, simulation by finite elements method is realized with aim to calculate the electromagnetic energy of interaction: probe and piece (with/without defect. From calculated energy, we deduce the real and imaginary components of the impedance which enables to determine the characteristic parameters of a crack in various metallic parts.

  3. Generalized multiscale finite element method for elasticity equations

    KAUST Repository

    Chung, Eric T.

    2014-10-05

    In this paper, we discuss the application of generalized multiscale finite element method (GMsFEM) to elasticity equation in heterogeneous media. We consider steady state elasticity equations though some of our applications are motivated by elastic wave propagation in subsurface where the subsurface properties can be highly heterogeneous and have high contrast. We present the construction of main ingredients for GMsFEM such as the snapshot space and offline spaces. The latter is constructed using local spectral decomposition in the snapshot space. The spectral decomposition is based on the analysis which is provided in the paper. We consider both continuous Galerkin and discontinuous Galerkin coupling of basis functions. Both approaches have their cons and pros. Continuous Galerkin methods allow avoiding penalty parameters though they involve partition of unity functions which can alter the properties of multiscale basis functions. On the other hand, discontinuous Galerkin techniques allow gluing multiscale basis functions without any modifications. Because basis functions are constructed independently from each other, this approach provides an advantage. We discuss the use of oversampling techniques that use snapshots in larger regions to construct the offline space. We provide numerical results to show that one can accurately approximate the solution using reduced number of degrees of freedom.

  4. Randomized Oversampling for Generalized Multiscale Finite Element Methods

    KAUST Repository

    Calo, Victor M.

    2016-03-23

    In this paper, we develop efficient multiscale methods for flows in heterogeneous media. We use the generalized multiscale finite element (GMsFEM) framework. GMsFEM approximates the solution space locally using a few multiscale basis functions. This approximation selects an appropriate snapshot space and a local spectral decomposition, e.g., the use of oversampled regions, in order to achieve an efficient model reduction. However, the successful construction of snapshot spaces may be costly if too many local problems need to be solved in order to obtain these spaces. We use a moderate quantity of local solutions (or snapshot vectors) with random boundary conditions on oversampled regions with zero forcing to deliver an efficient methodology. Motivated by the randomized algorithm presented in [P. G. Martinsson, V. Rokhlin, and M. Tygert, A Randomized Algorithm for the approximation of Matrices, YALEU/DCS/TR-1361, Yale University, 2006], we consider a snapshot space which consists of harmonic extensions of random boundary conditions defined in a domain larger than the target region. Furthermore, we perform an eigenvalue decomposition in this small space. We study the application of randomized sampling for GMsFEM in conjunction with adaptivity, where local multiscale spaces are adaptively enriched. Convergence analysis is provided. We present representative numerical results to validate the method proposed.

  5. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  6. Calibration of Ge(Li) semiconductor detector by method using agar volume source

    International Nuclear Information System (INIS)

    Yanase, Nobuyuki; Kasai, Atsushi

    1979-12-01

    The Ge(Li) semiconductor detector was calibrated for measurements of environmental samples. The radioisotopes used for standard sources are 22 Na, 51 Cr, 56 Co, 57 Co, 133 Ba, 137 Cs, 144 Ce and 241 Am. These are mixed with hot agar aqueous solution and fixed uniformly in a cylindrical plastic case in cooling. The agar volume source is advantageous in handling over the fluid aqueous source. The prepared cylindrical standard sources are in diameters 6 and 8 cm and thicknesses 1, 5, 10, 20, 30 and 40 mm (only for 8 cm diameter). The radioactivities of prepared standard sources are between 0.03 μCi and 0.2 μCi. It takes only a week to make the calibration except data processing. The obtained full energy peak efficiency curves include 5 - 10% error due to preparation of agar source, reference radioactivity data of purchased standard solutions, reference data of branching ratio of gamma-ray and sum effect. The efficiency curves, however, are sufficient for quantitative analysis of environmental samples. (author)

  7. Quantitative autoradiography of semiconductor base material

    International Nuclear Information System (INIS)

    Treutler, H.C.; Freyer, K.

    1983-01-01

    Autoradiographic methods for the quantitative determination of elements interesting in semiconductor technology and their distribution in silicon are described. Whereas the local concentration and distribution of phosphorus has been determined with the aid of silver halide films the neutron-induced autoradiography has been applied in the case of boron. Silicon disks containing diffused phosphorus or implanted or diffused boron have been used as standard samples. Different possibilities of the quantitative evaluation of autoradiograms are considered and compared

  8. Efficiency of High Order Spectral Element Methods on Petascale Architectures

    KAUST Repository

    Hutchinson, Maxwell; Heinecke, Alexander; Pabst, Hans; Henry, Greg; Parsani, Matteo; Keyes, David E.

    2016-01-01

    High order methods for the solution of PDEs expose a tradeoff between computational cost and accuracy on a per degree of freedom basis. In many cases, the cost increases due to higher arithmetic intensity while affecting data movement minimally. As architectures tend towards wider vector instructions and expect higher arithmetic intensities, the best order for a particular simulation may change. This study highlights preferred orders by identifying the high order efficiency frontier of the spectral element method implemented in Nek5000 and NekBox: the set of orders and meshes that minimize computational cost at fixed accuracy. First, we extract Nek’s order-dependent computational kernels and demonstrate exceptional hardware utilization by hardware-aware implementations. Then, we perform productionscale calculations of the nonlinear single mode Rayleigh-Taylor instability on BlueGene/Q and Cray XC40-based supercomputers to highlight the influence of the architecture. Accuracy is defined with respect to physical observables, and computational costs are measured by the corehour charge of the entire application. The total number of grid points needed to achieve a given accuracy is reduced by increasing the polynomial order. On the XC40 and BlueGene/Q, polynomial orders as high as 31 and 15 come at no marginal cost per timestep, respectively. Taken together, these observations lead to a strong preference for high order discretizations that use fewer degrees of freedom. From a performance point of view, we demonstrate up to 60% full application bandwidth utilization at scale and achieve ≈1PFlop/s of compute performance in Nek’s most flop-intense methods.

  9. Efficiency of High Order Spectral Element Methods on Petascale Architectures

    KAUST Repository

    Hutchinson, Maxwell

    2016-06-14

    High order methods for the solution of PDEs expose a tradeoff between computational cost and accuracy on a per degree of freedom basis. In many cases, the cost increases due to higher arithmetic intensity while affecting data movement minimally. As architectures tend towards wider vector instructions and expect higher arithmetic intensities, the best order for a particular simulation may change. This study highlights preferred orders by identifying the high order efficiency frontier of the spectral element method implemented in Nek5000 and NekBox: the set of orders and meshes that minimize computational cost at fixed accuracy. First, we extract Nek’s order-dependent computational kernels and demonstrate exceptional hardware utilization by hardware-aware implementations. Then, we perform productionscale calculations of the nonlinear single mode Rayleigh-Taylor instability on BlueGene/Q and Cray XC40-based supercomputers to highlight the influence of the architecture. Accuracy is defined with respect to physical observables, and computational costs are measured by the corehour charge of the entire application. The total number of grid points needed to achieve a given accuracy is reduced by increasing the polynomial order. On the XC40 and BlueGene/Q, polynomial orders as high as 31 and 15 come at no marginal cost per timestep, respectively. Taken together, these observations lead to a strong preference for high order discretizations that use fewer degrees of freedom. From a performance point of view, we demonstrate up to 60% full application bandwidth utilization at scale and achieve ≈1PFlop/s of compute performance in Nek’s most flop-intense methods.

  10. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  11. Fluid pressure method for recovering fuel pellets from nuclear fuel elements

    International Nuclear Information System (INIS)

    John, C.D. Jr.

    1979-01-01

    A method is described for removing fuel pellets from a nuclear fuel element without damaging the fuel pellets or fuel element sheath so that both may be reused. The method comprises holding the fuel element while a high pressure stream internally pressurizes the fuel element to expand the fuel element sheath away from the fuel pellets therein so that the fuel pellets may be easily removed

  12. Preisach hysteresis implementation in reluctance network method, comparison with finite element method

    OpenAIRE

    Allag , Hicham; Kedous-Lebouc , Afef; Latreche , Mohamed E. H.

    2008-01-01

    International audience; In this work, an implementation of static magnetic hysteresis in the reluctance network method is presented and its effectiveness is demonstrated. This implementation is achieved by a succession of iterative steps in the form of algorithm explained and developed for simple examples. However it remains valid for any magnetic circuit. The results obtained are compared to those given by finite element method simulation and essentially the effect of relaxation is discussed...

  13. FY 2000 report on the development of ultra low loss power element technology. Commercialization of next generation power semiconductor device; 2000 nendo choteisonshitsu denryoku soshi gijutsu kaihatsu seika hokokusho. Jisedai power handotai device jitsuyoka chosa

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    For the purpose of contributing to the promotion of development of ultra low loss power element technology, survey was conducted on the present situation, future, etc. of various technologies/systems related to power semiconductor devices. In the industrial equipment field, it is predicted that power semiconductor devices will be increased in the field of application by enlargement of the defense field of IGBT, new MOS structure elements, etc. In the field of home appliances, possibilities are expected of switching loss reduction and electric noise reduction by making SiC high speed diode. As to the space photovoltaic power generation, SiC is expected for various semiconductors such as solar cells, FET for transmitter/amplifier of radio power electric transmission use micro waves, etc. Concerning the radio communication system plan using stratosphere platform, there are technical problems on communication equipment such as antenna and RF circuit, and the role of SiC device is expected to be large. The society where the electrification rate is 80% and fuel cell vehicles are used is a new paradigm, and it is necessary and indispensable to commercialize ultra low loss power elements using SiC. (NEDO)

  14. Element stacking method for topology optimization with material-dependent boundary and loading conditions

    DEFF Research Database (Denmark)

    Yoon, Gil Ho; Park, Y.K.; Kim, Y.Y.

    2007-01-01

    A new topology optimization scheme, called the element stacking method, is developed to better handle design optimization involving material-dependent boundary conditions and selection of elements of different types. If these problems are solved by existing standard approaches, complicated finite...... element models or topology optimization reformulation may be necessary. The key idea of the proposed method is to stack multiple elements on the same discretization pixel and select a single or no element. In this method, stacked elements on the same pixel have the same coordinates but may have...... independent degrees of freedom. Some test problems are considered to check the effectiveness of the proposed stacking method....

  15. Non linear permanent magnets modelling with the finite element method

    International Nuclear Information System (INIS)

    Chavanne, J.; Meunier, G.; Sabonnadiere, J.C.

    1989-01-01

    In order to perform the calculation of permanent magnets with the finite element method, it is necessary to take into account the anisotropic behaviour of hard magnetic materials (Ferrites, NdFeB, SmCo5). In linear cases, the permeability of permanent magnets is a tensor. This one is fully described with the permeabilities parallel and perpendicular to the easy axis of the magnet. In non linear cases, the model uses a texture function which represents the distribution of the local easy axis of the cristallytes of the magnet. This function allows a good representation of the angular dependance of the coercitive field of the magnet. As a result, it is possible to express the magnetic induction B and the tensor as functions of the field and the texture parameter. This model has been implemented in the software FLUX3D where the tensor is used for the Newton-Raphson procedure. 3D demagnetization of a ferrite magnet by a NdFeB magnet is a suitable representative example. They analyze the results obtained for an ideally oriented ferrite magnet and a real one using a measured texture parameter

  16. Three-dimensional discrete element method simulation of core disking

    Science.gov (United States)

    Wu, Shunchuan; Wu, Haoyan; Kemeny, John

    2018-04-01

    The phenomenon of core disking is commonly seen in deep drilling of highly stressed regions in the Earth's crust. Given its close relationship with the in situ stress state, the presence and features of core disking can be used to interpret the stresses when traditional in situ stress measuring techniques are not available. The core disking process was simulated in this paper using the three-dimensional discrete element method software PFC3D (particle flow code). In particular, PFC3D is used to examine the evolution of fracture initiation, propagation and coalescence associated with core disking under various stress states. In this paper, four unresolved problems concerning core disking are investigated with a series of numerical simulations. These simulations also provide some verification of existing results by other researchers: (1) Core disking occurs when the maximum principal stress is about 6.5 times the tensile strength. (2) For most stress situations, core disking occurs from the outer surface, except for the thrust faulting stress regime, where the fractures were found to initiate from the inner part. (3) The anisotropy of the two horizontal principal stresses has an effect on the core disking morphology. (4) The thickness of core disk has a positive relationship with radial stress and a negative relationship with axial stresses.

  17. Fluid-film bearings: a finite element method of analysis

    International Nuclear Information System (INIS)

    Pururav, T.; Soni, R.S.; Kushwaha, H.S.; Mahajan, S.C.

    1995-01-01

    Finite element method (FEM) has become a very popular technique for the analysis of fluid-film bearings in the last few years. These bearings are extensively used in nuclear industry applications such as in moderator pumps and main coolant pumps. This report gives the methodology for the solution of Reynold's equation using FEM and its implementation in FE software LUBAN developed in house. It also deals with the mathematical basis and algorithm to account for the cavitation phenomena which makes these problems non-linear in nature. The dynamic coefficients of bearings are evaluated by one-step approach using variational principles. These coefficients are useful for the dynamic characterisation of fluid-film bearings. Several problems have been solved using this code including two real life problems, a circumferentially grooved journal bearing for which experimental results are available and the bearing of moderator pump of 500 MWe PHWR, have been solved. The results obtained for sample problems are in good agreement with the published literature. (author). 9 refs., 14 figs., 5 tabs., 2 ills

  18. Determination of heterogeneous medium parameters by single fuel element method

    International Nuclear Information System (INIS)

    Veloso, M.A.F.

    1985-01-01

    The neutron pulse propagation technique was employed to study an heterogeneous system consisting of a single fuel element placed at the symmetry axis of a large cylindrical D 2 O tank. The response of system for the pulse propagation technique is related to the inverse complex relaxation length of the neutron waves also known as the system dispersion law ρ (ω). Experimental values of ρ (ω) were compared with the ones derived from Fermi age - Diffusion theory. The main purpose of the experiment was to obtain the Feinberg-Galanin thermal constant (γ), which is the logaritmic derivative of the neutron flux at the fuel-moderator interface and a such a main input data for heterogeneous reactor theory calculations. The γ thermal constant was determined as the number giving the best agreement between the theoretical and experimental values of ρ (ω). The simultaneous determination of two among four parameters η,ρ,τ and L s is possible through the intersection of dispersion laws of the pure moderator system and the fuel moderator system. The parameters τ and η were termined by this method. It was shown that the thermal constant γ and the product η ρ can be computed from the real and imaginary parts of the fuel-moderator dispersion law. The results for this evaluation scheme showns a not stable behavior of γ as a function of frequency, a result not foreseen by the theoretical model. (Author) [pt

  19. Moving finite element method for ICF target implosion

    Science.gov (United States)

    Furuta, J.; Kawata, S.; Niu, K.

    1985-03-01

    One dimensional hydrodynamic codes for the analysis of internal confinement fusion (ICF) target implosion which include various effects were developed, but most of them utilize the artificial viscosity (e.g., Von Neumann's viscosity) which cannot reveal accurately the shock waves. A gain of ICF target implosion is much due to the dissipation at the shock fronts, so it is necessary to express correctly the shock waves which are affected by the viscosity. The width of the shock waves is usually a few times as large as the length of mean free path, therefore the meshes for the shock waves must be set to about 10 to the 4th to 10 to the 5th power. It is a serious problem because of the computational memories or CPU time. In the moving finite element (MPE) method, both nodal amplitudes and nodal positions move continuously with time in such a way as to satisfy simultaneous ordinary differential equations (OPDs) which minimize partial differential equation (PDE) residuals.

  20. A finite-elements method for turbulent flow analysis

    International Nuclear Information System (INIS)

    Autret, A.

    1986-03-01

    The work discussed here covers turbulent flow calculations using GALERKIN's finite-element method. In our specific case, we have to deal with monophasic incompressible flow in Boussinesq approximation in the normal operating conditions of a primary circuit of nuclear power plant. Turbulence effects on the mean field are taken into account by the k-epsilon model with two evolution equations: one for the kinetic energy of the turbulence, and one for the energy dissipation rate. The wall zone is covered by wall laws, and by REICHARDT's law in particular. A Law is advanced for the epsilon input profile, and a numerical solution is proposed for the physically aberrant values of k and epsilon generated by the model. Single-equation models are reviewed comparatively with the k-epsilon model. A comparison between calculated and analytical solutions or calculated and experimental results is presented for decreasing turbulence behind a grid, for the flow between parallel flat plates with three REYNOLDS numbers, and for backward facing step [fr

  1. Finite element analysis of CFRP reinforced silo structure design method

    Science.gov (United States)

    Yuan, Long; Xu, Xinsheng

    2017-11-01

    Because of poor construction, there is a serious problem of concrete quality in the silo project, which seriously affects the safe use of the structure. Concrete quality problems are mainly seen in three aspects: concrete strength cannot meet the design requirements, concrete cracking phenomenon is serious, and the unreasonable concrete vibration leads to a lot of honeycombs and surface voids. Silos are usually reinforced by carbon fiber cloth in order to ensure the safe use of silos. By the example of an alumina silo in a fly ash plant in Binzhou, Shandong Province, the alumina silo project was tested and examined on site. According to filed test results, the actual concrete strength was determined, and the damage causes of the silo was analysed. Then, a finite element analysis model of this silo was established, the CFRP cloth reinforcement method was adopted to strengthen the silo, and other technology like additional reinforcement, rebar planting, carbon fiber bonding technology was also expounded. The research of this paper is of great significance to the design and construction of silo structure.

  2. Mechanics of a crushable pebble assembly using discrete element method

    International Nuclear Information System (INIS)

    Annabattula, R.K.; Gan, Y.; Zhao, S.; Kamlah, M.

    2012-01-01

    The influence of crushing of individual pebbles on the overall strength of a pebble assembly is investigated using discrete element method. An assembly comprising of 5000 spherical pebbles is assigned with random critical failure energies with a Weibull distribution in accordance with the experimental observation. Then, the pebble assembly is subjected to uni-axial compression (ε 33 =1.5%) with periodic boundary conditions. The crushable pebble assembly shows a significant difference in stress–strain response in comparison to a non-crushable pebble assembly. The analysis shows that a ideal plasticity like behaviour (constant stress with increase in strain) is the characteristic of a crushable pebble assembly with sudden damage. The damage accumulation law plays a critical role in determining the critical stress while the critical number of completely failed pebbles at the onset of critical stress is independent of such a damage law. Furthermore, a loosely packed pebble assembly shows a higher crush resistance while the critical stress is insensitive to the packing factor (η) of the assembly.

  3. Analysis of gear reducer housing using the finite element method

    Science.gov (United States)

    Miklos, I. Zs; Miklos, C. C.; Alic, C. I.; Raţiu, S.

    2018-01-01

    The housing is an important component in the construction of gear reducers, having the role of fixing the relative position of the shafts and toothed wheels. At the same time, the housing takes over, via the bearings, the shaft loads resulting when the toothed wheel is engaging another toothed mechanism (i.e. power transmission through belts or chains), and conveys them to the foundation on which it is anchored. In this regard, in order to ensure the most accurate gearing, a high stiffness of the housing is required. In this paper, we present the computer-aided 3D modelling of the housing (in cast version) of a single stage cylindrical gear reducer, using the Autodesk Inventor Professional software, on the principle of constructive sizing. For the housing resistance calculation, we carried out an analysis using the Autodesk Simulation Mechanical software to apply the finite element method, based on the actual loads, as well as a comparative study of the stress and strain distribution, for several tightening values of the retaining bolts that secure the cover and the foundation housing.

  4. A local level set method based on a finite element method for unstructured meshes

    International Nuclear Information System (INIS)

    Ngo, Long Cu; Choi, Hyoung Gwon

    2016-01-01

    A local level set method for unstructured meshes has been implemented by using a finite element method. A least-square weighted residual method was employed for implicit discretization to solve the level set advection equation. By contrast, a direct re-initialization method, which is directly applicable to the local level set method for unstructured meshes, was adopted to re-correct the level set function to become a signed distance function after advection. The proposed algorithm was constructed such that the advection and direct reinitialization steps were conducted only for nodes inside the narrow band around the interface. Therefore, in the advection step, the Gauss–Seidel method was used to update the level set function using a node-by-node solution method. Some benchmark problems were solved by using the present local level set method. Numerical results have shown that the proposed algorithm is accurate and efficient in terms of computational time

  5. A local level set method based on a finite element method for unstructured meshes

    Energy Technology Data Exchange (ETDEWEB)

    Ngo, Long Cu; Choi, Hyoung Gwon [School of Mechanical Engineering, Seoul National University of Science and Technology, Seoul (Korea, Republic of)

    2016-12-15

    A local level set method for unstructured meshes has been implemented by using a finite element method. A least-square weighted residual method was employed for implicit discretization to solve the level set advection equation. By contrast, a direct re-initialization method, which is directly applicable to the local level set method for unstructured meshes, was adopted to re-correct the level set function to become a signed distance function after advection. The proposed algorithm was constructed such that the advection and direct reinitialization steps were conducted only for nodes inside the narrow band around the interface. Therefore, in the advection step, the Gauss–Seidel method was used to update the level set function using a node-by-node solution method. Some benchmark problems were solved by using the present local level set method. Numerical results have shown that the proposed algorithm is accurate and efficient in terms of computational time.

  6. Magnetic field computations of the magnetic circuits with permanent magnets by infinite element method

    International Nuclear Information System (INIS)

    Hahn, Song Yop

    1985-01-01

    A method employing infinite elements is described for the magnetic field computations of the magnetic circuits with permanent magnet. The system stiffness matrix is derived by a variational approach, while the interfacial boundary conditions between the finite element regions and the infinite element regions are dealt with using collocation method. The proposed method is applied to a simple linear problems, and the numerical results are compared with those of the standard finite element method and the analytic solutions. It is observed that the proposed method gives more accurate results than those of the standard finite element method under the same computing efforts. (Author)

  7. Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

    International Nuclear Information System (INIS)

    Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo

    2006-01-01

    Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

  8. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  9. Development of quadrilateral spline thin plate elements using the B-net method

    Science.gov (United States)

    Chen, Juan; Li, Chong-Jun

    2013-08-01

    The quadrilateral discrete Kirchhoff thin plate bending element DKQ is based on the isoparametric element Q8, however, the accuracy of the isoparametric quadrilateral elements will drop significantly due to mesh distortions. In a previouswork, we constructed an 8-node quadrilateral spline element L8 using the triangular area coordinates and the B-net method, which can be insensitive to mesh distortions and possess the second order completeness in the Cartesian coordinates. In this paper, a thin plate spline element is developed based on the spline element L8 and the refined technique. Numerical examples show that the present element indeed possesses higher accuracy than the DKQ element for distorted meshes.

  10. An implementation analysis of the linear discontinuous finite element method

    International Nuclear Information System (INIS)

    Becker, T. L.

    2013-01-01

    This paper provides an implementation analysis of the linear discontinuous finite element method (LD-FEM) that spans the space of (l, x, y, z). A practical implementation of LD includes 1) selecting a computationally efficient algorithm to solve the 4 x 4 matrix system Ax = b that describes the angular flux in a mesh element, and 2) choosing how to store the data used to construct the matrix A and the vector b to either reduce memory consumption or increase computational speed. To analyze the first of these, three algorithms were selected to solve the 4 x 4 matrix equation: Cramer's rule, a streamlined implementation of Gaussian elimination, and LAPACK's Gaussian elimination subroutine dgesv. The results indicate that Cramer's rule and the streamlined Gaussian elimination algorithm perform nearly equivalently and outperform LAPACK's implementation of Gaussian elimination by a factor of 2. To analyze the second implementation detail, three formulations of the discretized LD-FEM equations were provided for implementation in a transport solver: 1) a low-memory formulation, which relies heavily on 'on-the-fly' calculations and less on the storage of pre-computed data, 2) a high-memory formulation, which pre-computes much of the data used to construct A and b, and 3) a reduced-memory formulation, which lies between the low - and high-memory formulations. These three formulations were assessed in the Jaguar transport solver based on relative memory footprint and computational speed for increasing mesh size and quadrature order. The results indicated that the memory savings of the low-memory formulation were not sufficient to warrant its implementation. The high-memory formulation resulted in a significant speed advantage over the reduced-memory option (10-50%), but also resulted in a proportional increase in memory consumption (5-45%) for increasing quadrature order and mesh count; therefore, the practitioner should weigh the system memory constraints against any

  11. An implementation analysis of the linear discontinuous finite element method

    Energy Technology Data Exchange (ETDEWEB)

    Becker, T. L. [Bechtel Marine Propulsion Corporation, Knolls Atomic Power Laboratory, P.O. Box 1072, Schenectady, NY 12301-1072 (United States)

    2013-07-01

    This paper provides an implementation analysis of the linear discontinuous finite element method (LD-FEM) that spans the space of (l, x, y, z). A practical implementation of LD includes 1) selecting a computationally efficient algorithm to solve the 4 x 4 matrix system Ax = b that describes the angular flux in a mesh element, and 2) choosing how to store the data used to construct the matrix A and the vector b to either reduce memory consumption or increase computational speed. To analyze the first of these, three algorithms were selected to solve the 4 x 4 matrix equation: Cramer's rule, a streamlined implementation of Gaussian elimination, and LAPACK's Gaussian elimination subroutine dgesv. The results indicate that Cramer's rule and the streamlined Gaussian elimination algorithm perform nearly equivalently and outperform LAPACK's implementation of Gaussian elimination by a factor of 2. To analyze the second implementation detail, three formulations of the discretized LD-FEM equations were provided for implementation in a transport solver: 1) a low-memory formulation, which relies heavily on 'on-the-fly' calculations and less on the storage of pre-computed data, 2) a high-memory formulation, which pre-computes much of the data used to construct A and b, and 3) a reduced-memory formulation, which lies between the low - and high-memory formulations. These three formulations were assessed in the Jaguar transport solver based on relative memory footprint and computational speed for increasing mesh size and quadrature order. The results indicated that the memory savings of the low-memory formulation were not sufficient to warrant its implementation. The high-memory formulation resulted in a significant speed advantage over the reduced-memory option (10-50%), but also resulted in a proportional increase in memory consumption (5-45%) for increasing quadrature order and mesh count; therefore, the practitioner should weigh the system memory

  12. Sensitivity of Particle Size in Discrete Element Method to Particle Gas Method (DEM_PGM) Coupling in Underbody Blast Simulations

    Science.gov (United States)

    2016-06-12

    Particle Size in Discrete Element Method to Particle Gas Method (DEM_PGM) Coupling in Underbody Blast Simulations Venkatesh Babu, Kumar Kulkarni, Sanjay...buried in soil viz., (1) coupled discrete element & particle gas methods (DEM-PGM) and (2) Arbitrary Lagrangian-Eulerian (ALE), are investigated. The...DEM_PGM and identify the limitations/strengths compared to the ALE method. Discrete Element Method (DEM) can model individual particle directly, and

  13. Sensitivity analysis of the Galerkin finite element method neutron diffusion solver to the shape of the elements

    Energy Technology Data Exchange (ETDEWEB)

    Hosseini, Seyed Abolfaz [Dept. of Energy Engineering, Sharif University of Technology, Tehran (Iran, Islamic Republic of)

    2017-02-15

    The purpose of the present study is the presentation of the appropriate element and shape function in the solution of the neutron diffusion equation in two-dimensional (2D) geometries. To this end, the multigroup neutron diffusion equation is solved using the Galerkin finite element method in both rectangular and hexagonal reactor cores. The spatial discretization of the equation is performed using unstructured triangular and quadrilateral finite elements. Calculations are performed using both linear and quadratic approximations of shape function in the Galerkin finite element method, based on which results are compared. Using the power iteration method, the neutron flux distributions with the corresponding eigenvalue are obtained. The results are then validated against the valid results for IAEA-2D and BIBLIS-2D benchmark problems. To investigate the dependency of the results to the type and number of the elements, and shape function order, a sensitivity analysis of the calculations to the mentioned parameters is performed. It is shown that the triangular elements and second order of the shape function in each element give the best results in comparison to the other states.

  14. Element analysis of Japanese traditional papers by PIXE method

    International Nuclear Information System (INIS)

    Suzuki, Tatsuya; Yasuda, Keisuke; Tani, Teruhiro

    2000-01-01

    The Japanese papers, 'washi', are made from the bast fibers of the plants. Since washi have the informations of the raw material plants, there is potentiality of the identification of the production place by the element analysis of the washi. Three kinds of washi made of kozo, which have different habitats, were prepared. The elements in their washi were measured by the PIXE. It was confirmed that the amount of elements included in the washi depend on the habitats of their raw material plants. (author)

  15. Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

    Science.gov (United States)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2018-01-01

    Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-principles simulations to evaluate concepts such as the electron effective mass for disordered systems since the absence of periodicity induced by the disorder precludes the use of common concepts derived from condensed matter physics. In this paper, we propose a methodology based on first-principles simulations that partially solves this problem, by quantifying the degree of delocalization of a wave function and of the connectivity between the atomic sites within this electronic state. We validate the robustness of the proposed formalism on crystalline and molecular systems and extend the insights gained to disordered/amorphous InGaZnO4 and Si. We also explore the properties of p -type oxide semiconductor candidates recently reported to have a low effective mass in their crystalline phases [G. Hautier et al., Nat. Commun. 4, 2292 (2013), 10.1038/ncomms3292]. Although in their amorphous phase none of the candidates present a valence band with delocalization properties matching those found in the conduction band of amorphous InGaZnO4, three of the seven analyzed materials show some potential. The most promising candidate, K2Sn2O3 , is expected to possess in its amorphous phase a slightly higher hole mobility than the electron mobility in amorphous silicon.

  16. A Monte Carlo adapted finite element method for dislocation ...

    Indian Academy of Sciences (India)

    27

    This theory concerns the state of self-stress in a body which is discontinuously deformed. ..... Furthermore, force vectors of likely (or, potential) split elements may be computed ..... for elastic dislocation problems in geophysics; J. Geophys. Res.

  17. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  18. Prediction of residual stress using explicit finite element method

    Directory of Open Access Journals (Sweden)

    W.A. Siswanto

    2015-12-01

    Full Text Available This paper presents the residual stress behaviour under various values of friction coefficients and scratching displacement amplitudes. The investigation is based on numerical solution using explicit finite element method in quasi-static condition. Two different aeroengine materials, i.e. Super CMV (Cr-Mo-V and Titanium alloys (Ti-6Al-4V, are examined. The usage of FEM analysis in plate under normal contact is validated with Hertzian theoretical solution in terms of contact pressure distributions. The residual stress distributions along with normal and shear stresses on elastic and plastic regimes of the materials are studied for a simple cylinder-on-flat contact configuration model subjected to normal loading, scratching and followed by unloading. The investigated friction coefficients are 0.3, 0.6 and 0.9, while scratching displacement amplitudes are 0.05 mm, 0.10 mm and 0.20 mm respectively. It is found that friction coefficient of 0.6 results in higher residual stress for both materials. Meanwhile, the predicted residual stress is proportional to the scratching displacement amplitude, higher displacement amplitude, resulting in higher residual stress. It is found that less residual stress is predicted on Super CMV material compared to Ti-6Al-4V material because of its high yield stress and ultimate strength. Super CMV material with friction coefficient of 0.3 and scratching displacement amplitude of 0.10 mm is recommended to be used in contact engineering applications due to its minimum possibility of fatigue.

  19. Residual-driven online generalized multiscale finite element methods

    KAUST Repository

    Chung, Eric T.

    2015-09-08

    The construction of local reduced-order models via multiscale basis functions has been an area of active research. In this paper, we propose online multiscale basis functions which are constructed using the offline space and the current residual. Online multiscale basis functions are constructed adaptively in some selected regions based on our error indicators. We derive an error estimator which shows that one needs to have an offline space with certain properties to guarantee that additional online multiscale basis function will decrease the error. This error decrease is independent of physical parameters, such as the contrast and multiple scales in the problem. The offline spaces are constructed using Generalized Multiscale Finite Element Methods (GMsFEM). We show that if one chooses a sufficient number of offline basis functions, one can guarantee that additional online multiscale basis functions will reduce the error independent of contrast. We note that the construction of online basis functions is motivated by the fact that the offline space construction does not take into account distant effects. Using the residual information, we can incorporate the distant information provided the offline approximation satisfies certain properties. In the paper, theoretical and numerical results are presented. Our numerical results show that if the offline space is sufficiently large (in terms of the dimension) such that the coarse space contains all multiscale spectral basis functions that correspond to small eigenvalues, then the error reduction by adding online multiscale basis function is independent of the contrast. We discuss various ways computing online multiscale basis functions which include a use of small dimensional offline spaces.

  20. Method to mount defect fuel elements i transport casks

    International Nuclear Information System (INIS)

    Borgers, H.; Deleryd, R.

    1996-01-01

    Leaching or otherwise failed fuel elements are mounted in special containers that fit into specially designed chambers in a transportation cask for transport to reprocessing or long-time storage. The fuel elements are entered into the container under water in a pool. The interior of the container is dried before transfer to the cask. Before closing the cask, its interior, and the exterior of the container are dried. 2 figs

  1. Chemical method for producing nanoscale semiconductor compound CdS in a polymer matrix; Khimicheskij metod polucheniya nanorazmernogo poluprovodnikovogo soedineniya CdS v polimernoj matritse

    Energy Technology Data Exchange (ETDEWEB)

    Goglidze, Natalia; Dement' ev, Igor' ; Zadorozhnyj, Aleksandru; Koval' , Andrej; Gashin, Petr [Moldavskij gosudarstvennyj univ., Chisinau (Moldova, Republic of); Gutsul, Tatiana; Taraburkin, Aleksandr [Academiya nauk Moldovy, Chisinau (Moldova, Republic of)

    2012-07-15

    The results of cadmium sulfide synthesis in a polymer matrix from cadmium stearate and tiourea are given. Luminescent properties of the obtained materials were studied. It was shown that the elaborated method allows to efficiently synthesize 2-6 semiconductor compounds with the nano-granulated particles in various organic media including biopolymers. (authors)

  2. Analysis of a discrete element method and coupling with a compressible fluid flow method

    International Nuclear Information System (INIS)

    Monasse, L.

    2011-01-01

    This work aims at the numerical simulation of compressible fluid/deformable structure interactions. In particular, we have developed a partitioned coupling algorithm between a Finite Volume method for the compressible fluid and a Discrete Element method capable of taking into account fractures in the solid. A survey of existing fictitious domain methods and partitioned algorithms has led to choose an Embedded Boundary method and an explicit coupling scheme. We first showed that the Discrete Element method used for the solid yielded the correct macroscopic behaviour and that the symplectic time-integration scheme ensured the preservation of energy. We then developed an explicit coupling algorithm between a compressible inviscid fluid and an un-deformable solid. Mass, momentum and energy conservation and consistency properties were proved for the coupling scheme. The algorithm was then extended to the coupling with a deformable solid, in the form of a semi implicit scheme. Finally, we applied this method to unsteady inviscid flows around moving structures: comparisons with existing numerical and experimental results demonstrate the excellent accuracy of our method. (author) [fr

  3. Modeling 3D PCMI using the Extended Finite Element Method with higher order elements

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, W. [Idaho National Lab. (INL), Idaho Falls, ID (United States); Spencer, Benjamin W. [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2017-03-31

    This report documents the recent development to enable XFEM to work with higher order elements. It also demonstrates the application of higher order (quadratic) elements to both 2D and 3D models of PCMI problems, where discrete fractures in the fuel are represented using XFEM. The modeling results demonstrate the ability of the higher order XFEM to accurately capture the effects of a crack on the response in the vicinity of the intersecting surfaces of cracked fuel and cladding, as well as represent smooth responses in the regions away from the crack.

  4. Prediction of radiation ratio and sound transmission of complex extruded panel using wavenumber domain Unite element and boundary element methods

    International Nuclear Information System (INIS)

    Kim, H; Ryue, J; Thompson, D J; Müller, A D

    2016-01-01

    Recently, complex shaped aluminium panels have been adopted in many structures to make them lighter and stronger. The vibro-acoustic behaviour of these complex panels has been of interest for many years but conventional finite element and boundary element methods are not efficient to predict their performance at higher frequencies. Where the cross-sectional properties of the panels are constant in one direction, wavenumber domain numerical analysis can be applied and this becomes more suitable for panels with complex cross-sectional geometries. In this paper, a coupled wavenumber domain finite element and boundary element method is applied to predict the sound radiation from and sound transmission through a double-layered aluminium extruded panel, having a typical shape used in railway carriages. The predicted results are compared with measured ones carried out on a finite length panel and good agreement is found. (paper)

  5. Numerical Methods Application for Reinforced Concrete Elements-Theoretical Approach for Direct Stiffness Matrix Method

    Directory of Open Access Journals (Sweden)

    Sergiu Ciprian Catinas

    2015-07-01

    Full Text Available A detailed theoretical and practical investigation of the reinforced concrete elements is due to recent techniques and method that are implemented in the construction market. More over a theoretical study is a demand for a better and faster approach nowadays due to rapid development of the calculus technique. The paper above will present a study for implementing in a static calculus the direct stiffness matrix method in order capable to address phenomena related to different stages of loading, rapid change of cross section area and physical properties. The method is a demand due to the fact that in our days the FEM (Finite Element Method is the only alternative to such a calculus and FEM are considered as expensive methods from the time and calculus resources point of view. The main goal in such a method is to create the moment-curvature diagram in the cross section that is analyzed. The paper above will express some of the most important techniques and new ideas as well in order to create the moment curvature graphic in the cross sections considered.

  6. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  7. Expanded Mixed Multiscale Finite Element Methods and Their Applications for Flows in Porous Media

    KAUST Repository

    Jiang, L.; Copeland, D.; Moulton, J. D.

    2012-01-01

    We develop a family of expanded mixed multiscale finite element methods (MsFEMs) and their hybridizations for second-order elliptic equations. This formulation expands the standard mixed multiscale finite element formulation in the sense that four

  8. Semiconductor composition containing iron, dysprosium, and terbium

    Science.gov (United States)

    Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.; Malasi, Abhinav; Taz, Humaira; Farah, Annettee E.; Kalyanaraman, Ramakrishnan; Duscher, Gerd Josef Mansfred; Patel, Maulik K.

    2017-09-26

    An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

  9. Nuclear fuel element, and method of producing same

    International Nuclear Information System (INIS)

    Armijo, J.S.; Esch, E.L.

    1986-01-01

    This invention relates to an improvement in nuclear fuel elements having a composite container comprising a cladding sheath provided with a protective barrier of zirconium metal covering the inner surface of the sheath, rendering such fuel elements more resistant to hydrogen accumulation in service. The invention specifically comprises removing substantially all zirconium metal of the barrier layer from the part of the sheath surrounding and defining the plenum region. Thus the protective barrier of zirconium metal covers only the inner surface of the fuel container in the area immediately embracing the fissionable fuel material

  10. Finite element and finite difference methods in electromagnetic scattering

    CERN Document Server

    Morgan, MA

    2013-01-01

    This second volume in the Progress in Electromagnetic Research series examines recent advances in computational electromagnetics, with emphasis on scattering, as brought about by new formulations and algorithms which use finite element or finite difference techniques. Containing contributions by some of the world's leading experts, the papers thoroughly review and analyze this rapidly evolving area of computational electromagnetics. Covering topics ranging from the new finite-element based formulation for representing time-harmonic vector fields in 3-D inhomogeneous media using two coupled sca

  11. Method to incorporate anisotropic semiconductor nanocrystals of all shapes in an ultrathin and uniform silica shell

    NARCIS (Netherlands)

    Hutter, Eline M.; Pietra, Francesca; Moes, Relinde; Mitoraj, Dariusz; Meeldijk, Johannes D.; De Mello Donegá, Celso; Vanmaekelbergh, Daniël

    2014-01-01

    In this work, we present a method for the incorporation of anisotropic colloidal nanocrystals of many different shapes in silica in a highly controlled way. This method yields a uniform silica shell, with thickness tunable from 3 to 17 nm. The silica shell perfectly adapts to the shape of the

  12. Topology optimization of bounded acoustic problems using the hybrid finite element-wave based method

    DEFF Research Database (Denmark)

    Goo, Seongyeol; Wang, Semyung; Kook, Junghwan

    2017-01-01

    This paper presents an alternative topology optimization method for bounded acoustic problems that uses the hybrid finite element-wave based method (FE-WBM). The conventional method for the topology optimization of bounded acoustic problems is based on the finite element method (FEM), which...

  13. The boundary element method : errors and gridding for problems with hot spots

    NARCIS (Netherlands)

    Kakuba, G.

    2011-01-01

    Adaptive gridding methods are of fundamental importance both for industry and academia. As one of the computing methods, the Boundary Element Method (BEM) is used to simulate problems whose fundamental solutions are available. The method is usually characterised as constant elements BEM or linear

  14. Modeling of detection efficiency of HPGe semiconductor detector by Monte Carlo method

    International Nuclear Information System (INIS)

    Rapant, T.

    2003-01-01

    Over the past ten years following the gradual adoption of new legislative standards for protection against ionizing radiation was significant penetration of gamma-spectrometry between standard radioanalytical methods. In terms of nuclear power plant gamma-spectrometry has shown as the most effective method of determining of the activity of individual radionuclides. Spectrometric laboratories were gradually equipped with the most modern technical equipment. Nevertheless, due to the use of costly and time intensive experimental calibration methods, the possibilities of gamma-spectrometry were partially limited. Mainly in late 90-ies during substantial renovation and modernization works. For this reason, in spectrometric laboratory in Nuclear Power Plants Bohunice in cooperation with the Department of Nuclear Physics FMPI in Bratislava were developed and tested several calibration procedures based on computer simulations using GEANT program. In presented thesis the calibration method for measuring of bulk samples based on auto-absorption factors is described. The accuracy of the proposed method is at least comparable with other used methods, but it surpasses them significantly in terms of efficiency and financial time and simplicity. The described method has been used successfully almost for two years in laboratory spectrometric Radiation Protection Division in Bohunice nuclear power. It is shown by the results of international comparison measurements and repeated validation measurements performed by Slovak Institute of Metrology in Bratislava.

  15. The development of a curved beam element model applied to finite elements method

    International Nuclear Information System (INIS)

    Bento Filho, A.

    1980-01-01

    A procedure for the evaluation of the stiffness matrix for a thick curved beam element is developed, by means of the minimum potential energy principle, applied to finite elements. The displacement field is prescribed through polynomial expansions, and the interpolation model is determined by comparison of results obtained by the use of a sample of different expansions. As a limiting case of the curved beam, three cases of straight beams, with different dimensional ratios are analised, employing the approach proposed. Finally, an interpolation model is proposed and applied to a curved beam with great curvature. Desplacements and internal stresses are determined and the results are compared with those found in the literature. (Author) [pt

  16. Electron mobilities of n-type organic semiconductors from time-dependent wavepacket diffusion method: pentacenequinone derivatives.

    Science.gov (United States)

    Zhang, WeiWei; Zhong, XinXin; Zhao, Yi

    2012-11-26

    The electron mobilities of two n-type pentacenequinone derivative organic semiconductors, 5,7,12,14-tetraaza-6,13-pentacenequinone (TAPQ5) and 1,4,8,11-tetraaza-6,13-pentacenequinone (TAPQ7), are investigated with use of the methods of electronic structure and quantum dynamics. The electronic structure calculations reveal that the two key parameters for the control of electron transfer, reorganization energy and electronic coupling, are similar for these two isomerization systems, and the charge carriers essentially display one-dimensional transport properties. The mobilities are then calculated by using the time-dependent wavepacket diffusion approach in which the dynamic fluctuations of the electronic couplings are incorporated via their correlation functions obtained from molecular dynamics simulations. The predicted mobility of TAPQ7 crystal is about six times larger than that of TAPQ5 crystal. Most interestingly, Fermi's golden rule predicts the mobilities very close to those from the time-dependent wavepacket diffusion method, even though the electronic couplings are explicitly large enough to make the perturbation theory invalid. The possible reason is analyzed from the dynamic fluctuations.

  17. Method for making photovoltaic devices using oxygenated semiconductor thin film layers

    Science.gov (United States)

    Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

    2014-12-16

    A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

  18. Reliability-Based Shape Optimization using Stochastic Finite Element Methods

    DEFF Research Database (Denmark)

    Enevoldsen, Ib; Sørensen, John Dalsgaard; Sigurdsson, G.

    1991-01-01

    stochastic fields (e.g. loads and material parameters such as Young's modulus and the Poisson ratio). In this case stochastic finite element techniques combined with FORM analysis can be used to obtain measures of the reliability of the structural systems, see Der Kiureghian & Ke (6) and Liu & Der Kiureghian...

  19. Leakage monitoring equipment of fuel element by delayed neutron method

    International Nuclear Information System (INIS)

    Ji Changsong; Zhang Shulan; Zhang Shuheng

    1999-01-01

    Based on monitoring results of delayed neutrons from reactor first circle water, the leakage of reactor fuel elements is monitored. A monitoring equipment consisted of an array of 3 He proportional counter tubes with 75 s delay has been developed. The neutron detection efficiency of 6.1% is obtained

  20. Stability estimates for hp spectral element methods for elliptic ...

    Indian Academy of Sciences (India)

    ... parallel preconditioners and error estimates for the solution of the minimization problem which are nearly optimal as the condition number of the preconditioned system is polylogarithmic in , the number of processors and the number of degrees of freedom in each variable on each element. Moreover if the data is analytic ...

  1. A Novel Mesh Quality Improvement Method for Boundary Elements

    Directory of Open Access Journals (Sweden)

    Hou-lin Liu

    2012-01-01

    Full Text Available In order to improve the boundary mesh quality while maintaining the essential characteristics of discrete surfaces, a new approach combining optimization-based smoothing and topology optimization is developed. The smoothing objective function is modified, in which two functions denoting boundary and interior quality, respectively, and a weight coefficient controlling boundary quality are taken into account. In addition, the existing smoothing algorithm can improve the mesh quality only by repositioning vertices of the interior mesh. Without destroying boundary conformity, bad elements with all their vertices on the boundary cannot be eliminated. Then, topology optimization is employed, and those elements are converted into other types of elements whose quality can be improved by smoothing. The practical application shows that the worst elements can be eliminated and, with the increase of weight coefficient, the average quality of boundary mesh can also be improved. Results obtained with the combined approach are compared with some common approach. It is clearly shown that it performs better than the existing approach.

  2. hp Spectral element methods for three dimensional elliptic problems

    Indian Academy of Sciences (India)

    elliptic boundary value problems on non-smooth domains in R3. For Dirichlet problems, ... of variable degree bounded by W. Let N denote the number of layers in the geomet- ric mesh ... We prove a stability theorem for mixed problems when the spectral element functions vanish ..... Applying Theorem 3.1,. ∫ r l. |Mu|2dx −.

  3. Application of hexagonal element scheme in finite element method to three-dimensional diffusion problem of fast reactors

    International Nuclear Information System (INIS)

    Ishiguro, Misako; Higuchi, Kenji

    1983-01-01

    The finite element method is applied in Galerkin-type approximation to three-dimensional neutron diffusion equations of fast reactors. A hexagonal element scheme is adopted for treating the hexagonal lattice which is typical for fast reactors. The validity of the scheme is verified by applying the scheme as well as alternative schemes to the neutron diffusion calculation of a gas-cooled fast reactor of actual scale. The computed results are compared with corresponding values obtained using the currently applied triangular-element and also with conventional finite difference schemes. The hexagonal finite element scheme is found to yield a reasonable solution to the problem taken up here, with some merit in terms of saving in computing time, but the resulting multiplication factor differs by 1% and the flux by 9% compared with the triangular mesh finite difference scheme. The finite element method, even in triangular element scheme, would appear to incur error in inadmissible amount and which could not be easily eliminated by refining the nodes. (author)

  4. QUANTITATIVE EVALUATION METHOD OF ELEMENTS PRIORITY OF CARTOGRAPHIC GENERALIZATION BASED ON TAXI TRAJECTORY DATA

    Directory of Open Access Journals (Sweden)

    Z. Long

    2017-09-01

    Full Text Available Considering the lack of quantitative criteria for the selection of elements in cartographic generalization, this study divided the hotspot areas of passengers into parts at three levels, gave them different weights, and then classified the elements from the different hotspots. On this basis, a method was proposed to quantify the priority of elements selection. Subsequently, the quantitative priority of different cartographic elements was summarized based on this method. In cartographic generalization, the method can be preferred to select the significant elements and discard those that are relatively non-significant.

  5. ASTM E 1559 method for measuring material outgassing/deposition kinetics has applications to aerospace, electronics, and semiconductor industries

    Science.gov (United States)

    Garrett, J. W.; Glassford, A. P. M.; Steakley, J. M.

    1994-01-01

    The American Society for Testing and Materials has published a new standard test method for characterizing time and temperature-dependence of material outgassing kinetics and the deposition kinetics of outgassed species on surfaces at various temperatures. This new ASTM standard, E 1559(1), uses the quartz crystal microbalance (QCM) collection measurement approach. The test method was originally developed under a program sponsored by the United States Air Force Materials Laboratory (AFML) to create a standard test method for obtaining outgassing and deposition kinetics data for spacecraft materials. Standardization by ASTM recognizes that the method has applications beyond aerospace. In particular, the method will provide data of use to the electronics, semiconductor, and high vacuum industries. In ASTM E 1559 the material sample is held in vacuum in a temperature-controlled effusion cell, while its outgassing flux impinges on several QCM's which view the orifice of the effusion cell. Sample isothermal total mass loss (TML) is measured as a function of time from the mass collected on one of the QCM's which is cooled by liquid nitrogen, and the view factor from this QCM to the cell. The amount of outgassed volatile condensable material (VCM) on surfaces at higher temperatures is measured as a function of time during the isothermal outgassing test by controlling the temperatures of the remaining QCM's to selected values. The VCM on surfaces at temperatures in between those of the collector QCM's is determined at the end of the isothermal test by heating the QCM's at a controlled rate and measuring the mass loss from the end of the QCM's as a function of time and temperature. This reevaporation of the deposit collected on the QCM's is referred to as QCM thermogravimetric analysis. Isothermal outgassing and deposition rates can be determined by differentiating the isothermal TML and VCM data, respectively, while the evaporation rates of the species can be obtained as a

  6. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  7. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  8. Self-supporting method; an alternative method for steel truss bridge element replacement

    Science.gov (United States)

    Arsyad, Muhammad; Sangadji, Senot; As'ad, Sholihin

    2017-11-01

    Steel truss bridge often requires replacement of its element due to serious damage caused by traffic accidents. This replacement is carried out using temporary supporting structure. It would be difficult when the available space for the temporary structure is quite limited and or the position of work is at a high elevation. The self-supporting method is proposed instead of temporary supporting structure. This paper will discuss an innovative method of bridge rehabilitation by utilizing the existing bridge structure. It requires such temporary connecting structure that installed on the existing bridge element, therefore, the forces during replacement process could be transferred to the bridge foundation directly. By taking the case on a steel truss bridge Jetis Salatiga which requires element replacement due to its damages on two main diagonals, a modeling is carried out to get a proper repair method. Structural analysis is conducted for three temporary connecting structure models: “I,” “V,” and triangular model. Stresses and translations that occur in the structure are used as constraints. Bridge bearings are modeled in two different modes: fixed-fixed system and fixed-free one. Temperature load is given in each condition to obtain the appropriate time for execution. The triangular model is chosen as the best one. In the fixed-fixed mode, this method can be carried out in a temperature range 27-28.8° C, while in fixed-free one, the temperature it is allowed between 27-43.4 °C. The D4 is dismantled first by cutting the D4 leaving an area of 1140.2 mm2 or 127 mm web length to enable plastic condition until the D4 collapses. At the beginning of elongation occurs, immediately performed a slowly jacking on a temporary connecting structure so that the force on D4 is gradually transferred to the temporary connecting structure then the D4 and D5 are set in their place.

  9. A method to reproduce alpha-particle spectra measured with semiconductor detectors.

    Science.gov (United States)

    Timón, A Fernández; Vargas, M Jurado; Sánchez, A Martín

    2010-01-01

    A method is proposed to reproduce alpha-particle spectra measured with silicon detectors, combining analytical and computer simulation techniques. The procedure includes the use of the Monte Carlo method to simulate the tracks of alpha-particles within the source and in the detector entrance window. The alpha-particle spectrum is finally obtained by the convolution of this simulated distribution and the theoretical distributions representing the contributions of the alpha-particle spectrometer to the spectrum. Experimental spectra from (233)U and (241)Am sources were compared with the predictions given by the proposed procedure, showing good agreement. The proposed method can be an important aid for the analysis and deconvolution of complex alpha-particle spectra. Copyright 2009 Elsevier Ltd. All rights reserved.

  10. Method to produce fuel element blocks for HTR reactors

    International Nuclear Information System (INIS)

    Hrovat, M.; Rachor, L.

    1977-01-01

    The patent claim relates to one partial step of the multi-stage pressing process in the production of fuel elements. A binder resin with a softening point at least 15 0 C but preferably 25-40 0 C above the melting point of the lubricant is proposed. The pressed block is expelled from the forging die in the temperature interval between the melting point of the lubricant and the softening point of the binder resin. The purpose of the invention is that the pressed fuel element blocks are expelled from the machine tool without damage at a pressure low enough to protect the mechanical integrity of the coated fuel particles or fertile particles. (UA) [de

  11. Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production

    Science.gov (United States)

    Lany, Stephan

    2016-06-07

    Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula Sn.sub.1-x(R).sub.xS, where R is selected from magnesium, calcium and strontium, as well as methods of producing the same, are disclosed.

  12. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  13. On angle conditions in the finite element method

    Czech Academy of Sciences Publication Activity Database

    Brandts, J.; Hannukainen, A.; Korotov, S.; Křížek, Michal

    2011-01-01

    Roč. 56, - (2011), s. 81-95 ISSN 1575-9822 R&D Projects: GA AV ČR(CZ) IAA100190803 Institutional research plan: CEZ:AV0Z10190503 Keywords : simplicial finite elements * minimum and maximum angle condition * ball conditions Subject RIV: BA - General Mathematics http://www.sema.org.es/ojs/index.php?journal=journal&page=article&op=viewArticle&path%5B%5D=612

  14. Parametric study on single shot peening by dimensional analysis method incorporated with finite element method

    Science.gov (United States)

    Wu, Xian-Qian; Wang, Xi; Wei, Yan-Peng; Song, Hong-Wei; Huang, Chen-Guang

    2012-06-01

    Shot peening is a widely used surface treatment method by generating compressive residual stress near the surface of metallic materials to increase fatigue life and resistance to corrosion fatigue, cracking, etc. Compressive residual stress and dent profile are important factors to evaluate the effectiveness of shot peening process. In this paper, the influence of dimensionless parameters on maximum compressive residual stress and maximum depth of the dent were investigated. Firstly, dimensionless relations of processing parameters that affect the maximum compressive residual stress and the maximum depth of the dent were deduced by dimensional analysis method. Secondly, the influence of each dimensionless parameter on dimensionless variables was investigated by the finite element method. Furthermore, related empirical formulas were given for each dimensionless parameter based on the simulation results. Finally, comparison was made and good agreement was found between the simulation results and the empirical formula, which shows that a useful approach is provided in this paper for analyzing the influence of each individual parameter.

  15. A Novel Method for Control Performance Assessment with Fractional Order Signal Processing and Its Application to Semiconductor Manufacturing

    Directory of Open Access Journals (Sweden)

    Kai Liu

    2018-06-01

    Full Text Available The significant task for control performance assessment (CPA is to review and evaluate the performance of the control system. The control system in the semiconductor industry exhibits a complex dynamic behavior, which is hard to analyze. This paper investigates the interesting crossover properties of Hurst exponent estimations and proposes a novel method for feature extraction of the nonlinear multi-input multi-output (MIMO systems. At first, coupled data from real industry are analyzed by multifractal detrended fluctuation analysis (MFDFA and the resultant multifractal spectrum is obtained. Secondly, the crossover points with spline fit in the scale-law curve are located and then employed to segment the entire scale-law curve into several different scaling regions, in which a single Hurst exponent can be estimated. Thirdly, to further ascertain the origin of the multifractality of control signals, the generalized Hurst exponents of the original series are compared with shuffled data. At last, non-Gaussian statistical properties, multifractal properties and Hurst exponents of the process control variables are derived and compared with different sets of tuning parameters. The results have shown that CPA of the MIMO system can be better employed with the help of fractional order signal processing (FOSP.

  16. Study of film semiconductor glass-metal interfaces by nuclear methods

    International Nuclear Information System (INIS)

    Wehr, Muryel.

    1979-01-01

    The use of nuclear method analysis, particularly α particles and Li + ions elastic backscattering permitted to study the glass chalcogenide-metal interdiffusion submitted to thermal and electric stresses. The 8 MeV alpha particles are of a great interest, they increase five times the depth of the gold analysis in glasses compared with the 3,5 MeV alpha particles [fr

  17. Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements

    Science.gov (United States)

    Savenkov, G. G.; Kardo-Sysoev, A. F.; Zegrya, A. G.; Os'kin, I. A.; Bragin, V. A.; Zegrya, G. G.

    2017-10-01

    The first findings concerning the initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds via the electrical explosion of a semiconductor bridge are presented. The obtained results indicate that the energy parameters of an explosive conversion depend on the mass of a combustible agent—namely, nanoporous silicon—and the silicon-doping type.

  18. hpGEM -- A software framework for discontinuous Galerkin finite element methods

    NARCIS (Netherlands)

    Pesch, L.; Bell, A.; Sollie, W.E.H.; Ambati, V.R.; Bokhove, Onno; van der Vegt, Jacobus J.W.

    2006-01-01

    hpGEM, a novel framework for the implementation of discontinuous Galerkin finite element methods, is described. We present structures and methods that are common for many (discontinuous) finite element methods and show how we have implemented the components as an object-oriented framework. This

  19. Acoustic boundary element method formulation with treatment of nearly singular integrands by element subdivision

    DEFF Research Database (Denmark)

    Cutanda Henríquez, Vicente; Juhl, Peter Møller

    2008-01-01

    It is well known that the Boundary Element Method (BEM) in its standard version cannot readily handle situations where the calculation point is very close to a surface. These problems are found: i) when two boundary surfaces are very close together, such as in narrow gaps and thin bodies, and ii)...

  20. Performance of thallium bromide semiconductor detectors produced by repeated Bridgman method

    International Nuclear Information System (INIS)

    Santos, Robinson Alves dos; Costa, Fabio Eduardo da; Martins, Joao Francisco Trencher; Hamada, Margarida M.

    2009-01-01

    TlBr crystals have been grown by the Repeated Bridgman method from commercial TlBr materials and characterized to be used as radiation detectors. We have shown that the Repeated Bridgman is effective to reduce the concentration of impurities in TlBr. It was observed that detectors fabricated from higher purity crystal exhibit significant improvement in performance compared to those produced from low purity crystals. However, problems still exist in TlBr detectors, due to the low charge carrier collection efficiency, which is probably caused by additional impurities or defects incorporated during crystal growth and detector fabrication processes. (author)

  1. Report on achievement in developing an ultra low loss power element technology. Survey on practical application of the next generation power semiconductor devices; 1998 nendo choteisonshitsu denryoku soshi gijutsu kaihatsu seika hokokusho. Jisedai power handotai device jitsuyoka chosa

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Trends were surveyed for development of an ultra low loss power element. Performance improvement has been progressed on power semiconductor elements by using Si as the raw material, but loss reduction has come close to the physical limit. SiC is expected of possibility to go beyond this limit. SiC is so very excellent that its band gap is two to three times greater, insulation breakdown electric field is 7.5 times higher, temperature to become a true semiconductor is three to four times higher than those of Si. The wide gap can reduce high temperature leaking current in p-n junctions, and the increased authenticity temperature can increase the upper limit for operation temperature. The insulation breakdown strength being higher by one digit can reduce the drift layer thickness, and is expected to dramatically reduce the loss. The problem is that high quality crystals have not been obtained to date. One of the promising application fields is electric vehicle. The device currently using the power element in the largest scale is used in frequency converting stations to link the 50-Hz power network in the eastern part of Japan to the 60-Hz network in the western part of Japan. Surveys were carried out on the Sakuma frequency converting station and the New Shinano substation. (NEDO)

  2. Method for separating the isotopes of a chemical element

    International Nuclear Information System (INIS)

    Devienne, F.M.

    1977-01-01

    A beam of positive or negative primary ions of at least one compound of a chemical element is accelerated in order to pass through collision boxes placed in series. As a result of inelastic collisions of the ions with the molecules of a neutral target gas within each collision box, a given percentage of primary ions is dissociated into at least two fragments, one of which is a secondary ion in the form of at least two isotopic species. The collision boxes are brought to a potential V 2 so as to trap preferentially one isotopic species which is condensed within each box. 15 claims, 4 figures

  3. SAFE-3D, Stress Analysis of 3-D Composite Structure by Finite Elements Method

    International Nuclear Information System (INIS)

    Cornell, D.C.; Jadhav, K.; Crowell, J.S.

    1969-01-01

    1 - Description of problem or function: SAFE-3D is a finite-element program for the three-dimensional elastic analysis of heterogeneous composite structures. The program uses the following types of finite elements - (1) tetrahedral elements to represent the continuum, (2) triangular plane stress membrane elements to represent inner liner or outer case, and (3) uniaxial tension-compression elements to represent internal reinforcement. The structure can be of arbitrary geometry and have any distribution of material properties, temperatures, surface loadings, and boundary conditions. 2 - Method of solution: The finite-element variational method is used. Equilibrium equations are solved by the alternating component iterative method. 3 - Restrictions on the complexity of the problem - Maxima of: 5000 nodes; 16000 elements. The program cannot be applied to incompressible solids and is not recommended for Poisson's ratio in the range of nu between 0.495 and 0.5

  4. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  5. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  6. Nano crystals of Ni doped Zn O semiconductor by Sol-Gel combustion method

    Energy Technology Data Exchange (ETDEWEB)

    Carrero, A.; Sagredo, V. [Universidad de Los Andes, Departamento de Fisica, Laboratorio de Magnetismo, 5101 Merida (Venezuela, Bolivarian Republic of); Larionova, J., E-mail: aneelyc@gmail.com [Universite Montpellier II, 2 Place Eugene Bataillon, 34090 Montpellier (France)

    2016-11-01

    Nanoparticles of the system Zn{sub 0.95}O were prepared by sol-gel self - combustion method and a study of their structural, optical and magnetic properties were conducted. X-ray diffraction study shows a hexagonal wurtzite structure for the nano compound. The formation of the wurtzite structure in Ni doped Zn O was further confirmed by Fourier transform infra-red spectrometry. Transmission electron microscopy revealed an average size of 31 nm for the particles. Optical absorption spectra shows that the band energy of Zn{sub 0.95}Ni{sub 0.}9{sub 5}O powders is about 2.54 eV at room temperature. A study of the magnetic properties of the nano powders of Zn O: Ni, reveals paramagnetic behavior, with interaction ferromagnetic between particles. (Author)

  7. A method for the combined measurement of volatile and condensable organic AMC in semiconductor applications

    Science.gov (United States)

    Miller, Charles M.; Zaloga, Emily C.; Lobert, Jürgen M.

    2014-04-01

    Monitoring airborne molecular contamination (AMC) at the parts per trillion (ppt) level in cleanroom environments, scanner applications and compressed gas lines is essential for processes, equipment and yield-control. For the operation of EUV tools, in particular, volatile organic contamination is known to have as much impact as condensable organic compounds, which requires a suitable sampling and measurement methodology. Some of the current industry standards use sample traps comprised of porous 2,6-diphenylene-oxide polymer resin, such as Tenax®, for measuring volatile organic (6 C atoms, about toluene and higher) AMC. Inherent problems associated with these traps are a number of artifacts and chemical reactions that reduce accuracy of reported organic AMC concentrations. The break-down of the polymeric material forms false positive artifacts when used in the presence of reactive gases, such as nitrous acid and ozone, which attack and degrade the polymer to form detectable AMC. Most importantly, these traps have poor capture efficiency for volatile organic compounds (VOC). To address the disadvantages of polymer-based sample traps, we developed a method based on carbonaceous, multi-layered adsorbent traps to replace the 2,6-diphenylene-oxide polymer resin sample trap type. Along with the new trap's ability to retain volatile organics, the trap was found to provide artifact-free results. With industry trends towards detecting more contaminants while continuously reducing required reporting limits for those compounds, artifact-free and accurate detection of AMC is needed at the parts per quadrillion (ppq) level. The proposed, multi-layered trap substantially increases laboratory productivity and reduces cost by eliminating the need to analyze condensable and volatile organic compounds in two separate methods. In our studies, even some organic compounds with six C-atoms, that are part of exposure tool OEM requirements, were not effectively retained by polymeric

  8. Numerical Investigations on Several Stabilized Finite Element Methods for the Stokes Eigenvalue Problem

    Directory of Open Access Journals (Sweden)

    Pengzhan Huang

    2011-01-01

    Full Text Available Several stabilized finite element methods for the Stokes eigenvalue problem based on the lowest equal-order finite element pair are numerically investigated. They are penalty, regular, multiscale enrichment, and local Gauss integration method. Comparisons between them are carried out, which show that the local Gauss integration method has good stability, efficiency, and accuracy properties, and it is a favorite method among these methods for the Stokes eigenvalue problem.

  9. Nuclear fuel element and a method of manufacture thereof

    International Nuclear Information System (INIS)

    Wood, J.C.

    1975-01-01

    A nuclear fuel element having a sheath of zirconium or a zirconium alloy and a cross-linked siloxane lacquer coating on the inner surface of the sheath and separating the nuclear fuel material from the sheath is described. The siloxane lacquer coating retards cracking of the sheath by iodine vapor emitted by the fuel during burn-up, and acts as a lubricant for the fuel to prevent rupture of the sheath by thermal ratchetting of the fuel against the sheath and caused by differential thermal expansion between the fuel and the sheath. A silicone grease is applied as a thin layer in the sheath and then baked so that oxidative cleavage of the side chains of the grease occurs to form a cross-linked siloxane lacquer coating bonded to the sheath

  10. Studying apple bruise using a finite element method analysis

    Science.gov (United States)

    Pascoal-Faria, P.; Alves, N.

    2017-07-01

    Apple bruise damage from harvesting, handling, transporting and sorting is considered to be the major source of reduced fruit quality, resulting in a loss of profits for the entire fruit industry. Bruising is defined as damage and discoloration of fruit flesh, usually with no breach of the skin. The three factors which can physically cause fruit bruising are vibration, compression load and impact. The last one is the main source of bruise damage. Therefore, prediction of the level of damage, stress distribution and deformation of the fruits under external force has become a very important task. To address these problems a finite element analysis has been developed for studying Portuguese Royal Gala apple bruise. The results obtained will be suitable to apple distributors and sellers and will allow a reduction of the impact caused by bruise damage in apple annual production.

  11. On Round-off Error for Adaptive Finite Element Methods

    KAUST Repository

    Alvarez-Aramberri, J.

    2012-06-02

    Round-off error analysis has been historically studied by analyzing the condition number of the associated matrix. By controlling the size of the condition number, it is possible to guarantee a prescribed round-off error tolerance. However, the opposite is not true, since it is possible to have a system of linear equations with an arbitrarily large condition number that still delivers a small round-off error. In this paper, we perform a round-off error analysis in context of 1D and 2D hp-adaptive Finite Element simulations for the case of Poisson equation. We conclude that boundary conditions play a fundamental role on the round-off error analysis, specially for the so-called ‘radical meshes’. Moreover, we illustrate the importance of the right-hand side when analyzing the round-off error, which is independent of the condition number of the matrix.

  12. Quadratic Finite Element Method for 1D Deterministic Transport

    International Nuclear Information System (INIS)

    Tolar, D R Jr.; Ferguson, J M

    2004-01-01

    In the discrete ordinates, or SN, numerical solution of the transport equation, both the spatial ((und r)) and angular ((und (Omega))) dependences on the angular flux ψ(und r),(und (Omega))are modeled discretely. While significant effort has been devoted toward improving the spatial discretization of the angular flux, we focus on improving the angular discretization of ψ(und r),(und (Omega)). Specifically, we employ a Petrov-Galerkin quadratic finite element approximation for the differencing of the angular variable (μ) in developing the one-dimensional (1D) spherical geometry S N equations. We develop an algorithm that shows faster convergence with angular resolution than conventional S N algorithms

  13. On Round-off Error for Adaptive Finite Element Methods

    KAUST Repository

    Alvarez-Aramberri, J.; Pardo, David; Paszynski, Maciej; Collier, Nathan; Dalcin, Lisandro; Calo, Victor M.

    2012-01-01

    Round-off error analysis has been historically studied by analyzing the condition number of the associated matrix. By controlling the size of the condition number, it is possible to guarantee a prescribed round-off error tolerance. However, the opposite is not true, since it is possible to have a system of linear equations with an arbitrarily large condition number that still delivers a small round-off error. In this paper, we perform a round-off error analysis in context of 1D and 2D hp-adaptive Finite Element simulations for the case of Poisson equation. We conclude that boundary conditions play a fundamental role on the round-off error analysis, specially for the so-called ‘radical meshes’. Moreover, we illustrate the importance of the right-hand side when analyzing the round-off error, which is independent of the condition number of the matrix.

  14. Explicit Dynamic Finite Element Method for Predicting Implosion/Explosion Induced Failure of Shell Structures

    Directory of Open Access Journals (Sweden)

    Jeong-Hoon Song

    2013-01-01

    Full Text Available A simplified implementation of the conventional extended finite element method (XFEM for dynamic fracture in thin shells is presented. Though this implementation uses the same linear combination of the conventional XFEM, it allows for considerable simplifications of the discontinuous displacement and velocity fields in shell finite elements. The proposed method is implemented for the discrete Kirchhoff triangular (DKT shell element, which is one of the most popular shell elements in engineering analysis. Numerical examples for dynamic failure of shells under impulsive loads including implosion and explosion are presented to demonstrate the effectiveness and robustness of the method.

  15. A mixed finite element domain decomposition method for nearly elastic wave equations in the frequency domain

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Xiaobing [Univ. of Tennessee, Knoxville, TN (United States)

    1996-12-31

    A non-overlapping domain decomposition iterative method is proposed and analyzed for mixed finite element methods for a sequence of noncoercive elliptic systems with radiation boundary conditions. These differential systems describe the motion of a nearly elastic solid in the frequency domain. The convergence of the iterative procedure is demonstrated and the rate of convergence is derived for the case when the domain is decomposed into subdomains in which each subdomain consists of an individual element associated with the mixed finite elements. The hybridization of mixed finite element methods plays a important role in the construction of the discrete procedure.

  16. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  17. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  18. Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same

    Science.gov (United States)

    McGregor, Douglas S.; Shultis, John K.; Rice, Blake B.; McNeil, Walter J.; Solomon, Clell J.; Patterson, Eric L.; Bellinger, Steven L.

    2010-12-21

    Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

  19. A novel hybrid stress-function finite element method immune to severe mesh distortion

    International Nuclear Information System (INIS)

    Cen Song; Zhou Mingjue; Fu Xiangrong

    2010-01-01

    This paper introduces a hybrid stress-function finite element method proposed recently for developing 2D finite element models immune to element shapes. Deferent from the first version of the hybrid-stress element constructed by Pian, the stress function φ of 2D elastic or fracture problem is regarded as the functional variable of the complementary energy functional. Then, the basic analytical solutions of φ are taken as the trial functions for finite element models, and meanwhile, the corresponding unknown stress-function constants are introduced. By using the principle of minimum complementary energy, these unknown stress-function constants can be expressed in terms of the displacements along element edges. Finally, the complementary energy functional can be rewritten in terms of element nodal displacement vector, and thus, the element stiffness matrix of such hybrid-function element can be obtained. As examples, two (8- and 12-node) quadrilateral plane elements and an arbitrary polygonal crack element are constructed by employing different basic analytical solutions of different stress functions. Numerical results show that, the 8- and 12-node plane models can produce the exact solutions for pure bending and linear bending problems, respectively, even the element shape degenerates into triangle and concave quadrangle; and the crack element can also predict accurate results with very low computational cost in analysis of stress-singularity problems.

  20. Stress analysis in pressure vessels by mixed finite element methods taking into account shear deformation

    International Nuclear Information System (INIS)

    Franca, L.P.; Toledo, E.M.; Loula, A.F.D.; Garcia, E.L.M.

    1988-12-01

    A new finite element method is employed to approximate axisymmetric shell problems. This formulation enhances stability and accuracy, from thin to moderately thick shells, compared to the correspondent Galerkin finite element approximations. Numerical results illustrate the good performance of the present method on some typical pressure vessels aplications. (author) [pt

  1. Assembly of finite element methods on graphics processors

    KAUST Repository

    Cecka, Cris; Lew, Adrian J.; Darve, E.

    2010-01-01

    in assembling and solving sparse linear systems with NVIDIA GPUs and the Compute Unified Device Architecture (CUDA) are created and analyzed. Multiple strategies for efficient use of global, shared, and local memory, methods to achieve memory coalescing

  2. Convergence of a residual based artificial viscosity finite element method

    KAUST Repository

    Nazarov, Murtazo

    2013-01-01

    . We prove convergence of the method, applied to a scalar conservation law in two space dimensions, toward an unique entropy solution for implicit time stepping schemes. © 2012 Elsevier B.V. All rights reserved.

  3. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  4. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  5. Two gamma-ray detectors method for examination of fuel elements

    International Nuclear Information System (INIS)

    Kristof, E.; Pregl, G.

    1979-01-01

    Th initial experiment and method for the nondestructive determination of a fuel element burnup is given. The method eliminates the error which originates from the unknown local dependency of the attenuation coefficient for gamma rays in fuel. (author)

  6. A Family of Multipoint Flux Mixed Finite Element Methods for Elliptic Problems on General Grids

    KAUST Repository

    Wheeler, Mary F.; Xue, Guangri; Yotov, Ivan

    2011-01-01

    In this paper, we discuss a family of multipoint flux mixed finite element (MFMFE) methods on simplicial, quadrilateral, hexahedral, and triangular-prismatic grids. The MFMFE methods are locally conservative with continuous normal fluxes, since

  7. Containment penetration design and analysis by finite element methods

    International Nuclear Information System (INIS)

    Perry, R.F.; Rigamonti, G.; Dainora, J.

    1975-01-01

    Containment penetration designs which provide complete support to process piping containing high pressure and high temperature fluids and which do not employ cooling coils, require special provisions to sustain loadings associated with normal/abnormal conditions and to limit maximum temperature transmitted to the containment concrete wall. In order to accomodate piping loads and fluid temperatures within code and regulatory limitations, the containment penetration designs require careful analysis of two critical regions: 1) the portion of the penetration sleeve which is exposed to containment ambient conditions and 2) the portion of the penetration which connects the sleeve to process piping (flued head). Analytical models using finite element representation of process piping, penetration flued head, and exposed sleeve were employed to investigate the penetration assembly design. By application of flexible multi-step analyses, different penetration configurations were evaluated to determine the effects of key design parameters. Among the parameters studied were flued head angles with the process piping, sleeve length and wall thickness. Special designs employing fins welded to the sleeve to further lower the temperature at the concrete wall interface were also investigated and fin geometry effects reported. (Auth.)

  8. Seismic Analysis of Concrete Dam by Using Finite Element Method

    Directory of Open Access Journals (Sweden)

    Rozaina Ismail

    2017-01-01

    Full Text Available This paper reports a brief study on linear seismic analysis of Sg. Kinta Concrete Dam. The analysis was conducted in order to determine the performance and behaviour of the dam under seismic excitation. The dam was modelled as two-dimensional and developed based on the design drawing that is obtained from Angkasa Consulting Services Sdn. Bhd. The seismic analysis of the dam is conducted using finite element analysis software package LUSAS 14.3 and the dam has been analyse as a plain stress problem with a linear consideration. A set of historic data, with E1 Centro earthquake acceleration of about 0.50g is used as an earthquake excitation. The natural frequency and mode shape up to fifth mode of the dam has been obtained from the analysis to show the differences of the stress and deformation between each mode. The maximum horizontal and vertical stress of Sg. Kinta dam was found and the distribution of them was discussed in form of contours. The deformation of the dam were also been discussed by comparing the maximum displacement for each mode shaped.

  9. Essentials of the finite element method for mechanical and structural engineers

    CERN Document Server

    Pavlou, Dimitrios G

    2015-01-01

    Fundamental coverage, analytic mathematics, and up-to-date software applications are hard to find in a single text on the finite element method (FEM). Dimitrios Pavlou's Essentials of the Finite Element Method: For Structural and Mechanical Engineers makes the search easier by providing a comprehensive but concise text for those new to FEM, or just in need of a refresher on the essentials. Essentials of the Finite Element Method explains the basics of FEM, then relates these basics to a number of practical engineering applications. Specific topics covered include linear spring elements, bar elements, trusses, beams and frames, heat transfer, and structural dynamics. Throughout the text, readers are shown step-by-step detailed analyses for finite element equations development. The text also demonstrates how FEM is programmed, with examples in MATLAB, CALFEM, and ANSYS allowing readers to learn how to develop their own computer code. Suitable for everyone from first-time BSc/MSc students to practicing mechanic...

  10. Groundwater flow analysis using mixed hybrid finite element method for radioactive waste disposal facilities

    International Nuclear Information System (INIS)

    Aoki, Hiroomi; Shimomura, Masanori; Kawakami, Hiroto; Suzuki, Shunichi

    2011-01-01

    In safety assessments of radioactive waste disposal facilities, ground water flow analysis are used for calculating the radionuclide transport pathway and the infiltration flow rate of groundwater into the disposal facilities. For this type of calculations, the mixed hybrid finite element method has been used and discussed about the accuracy of ones in Europe. This paper puts great emphasis on the infiltration flow rate of groundwater into the disposal facilities, and describes the accuracy of results obtained from mixed hybrid finite element method by comparing of local water mass conservation and the reliability of the element breakdown numbers among the mixed hybrid finite element method, finite volume method and nondegenerated finite element method. (author)

  11. The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

    International Nuclear Information System (INIS)

    Aydin, M. E.

    2008-01-01

    n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

  12. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  13. Two-point method uncertainty during control and measurement of cylindrical element diameters

    Science.gov (United States)

    Glukhov, V. I.; Shalay, V. V.; Radev, H.

    2018-04-01

    The topic of the article is devoted to the urgent problem of the reliability of technical products geometric specifications measurements. The purpose of the article is to improve the quality of parts linear sizes control by the two-point measurement method. The article task is to investigate methodical extended uncertainties in measuring cylindrical element linear sizes. The investigation method is a geometric modeling of the element surfaces shape and location deviations in a rectangular coordinate system. The studies were carried out for elements of various service use, taking into account their informativeness, corresponding to the kinematic pairs classes in theoretical mechanics and the number of constrained degrees of freedom in the datum element function. Cylindrical elements with informativity of 4, 2, 1 and θ (zero) were investigated. The uncertainties estimation of in two-point measurements was made by comparing the results of of linear dimensions measurements with the functional diameters maximum and minimum of the element material. Methodical uncertainty is formed when cylindrical elements with maximum informativeness have shape deviations of the cut and the curvature types. Methodical uncertainty is formed by measuring the element average size for all types of shape deviations. The two-point measurement method cannot take into account the location deviations of a dimensional element, so its use for elements with informativeness less than the maximum creates unacceptable methodical uncertainties in measurements of the maximum, minimum and medium linear dimensions. Similar methodical uncertainties also exist in the arbitration control of the linear dimensions of the cylindrical elements by limiting two-point gauges.

  14. Nested element method in multidimensional neutron diffusion calculations

    International Nuclear Information System (INIS)

    Altiparmakov, D.V.

    1983-01-01

    A new numerical method is developed that is particularly efficient in solving the multidimensional neutron diffusion equation in geometrically complex systems. The needs for a generally applicable and fast running computer code have stimulated the inroad of a nonclassical (R-function) numerical method into the nuclear field. By using the R-functions, the geometrical components of the diffusion problem are a priori analytically implemented into the approximate solution. The class of functions, to which the approximate solution belongs, is chosen as close to the exact solution class as practically acceptable from the time consumption point of view. That implies a drastic reduction of the number of degrees of freedom, compared to the other methods. Furthermore, the reduced number of degrees of freedom enables calculation of large multidimensional problems on small computers

  15. Elements of a method to scale ignition reactor Tokamak

    International Nuclear Information System (INIS)

    Cotsaftis, M.

    1984-08-01

    Due to unavoidable uncertainties from present scaling laws when projected to thermonuclear regime, a method is proposed to minimize these uncertainties in order to figure out the main parameters of ignited tokamak. The method mainly consists in searching, if any, a domain in adapted parameters space which allows Ignition, but is the least sensitive to possible change in scaling laws. In other words, Ignition domain is researched which is the intersection of all possible Ignition domains corresponding to all possible scaling laws produced by all possible transports

  16. Containment penetration design and analysis by finite element methods

    International Nuclear Information System (INIS)

    Perry, R.F.; Rigamonti, G.; Dainora, J.

    1975-01-01

    Containment penetration designs which provide complete support to process piping containing high pressure and high temperature fluids and which do not employ cooling coils, require special provisions to sustain loadings associated with normal/abnormal conditions and to limit maximum temperature transmitted to the containment concrete wall. In order to accommodate piping imposed loads and fluid temperatures within code and regulatory limitations, the containment penetration designs require careful analysis of two critical regions: the portion of the penetration sleeve which is exposed to containment ambient conditions and the portion of the penetration which connects the sleeve to process piping (flued head). The length and thickness of the sleeve must be designed to provide maximum heat dissipation to the atmosphere and minimum heat conduction through the sleeve to meet concrete temperature limitations. The sleeve must have the capability to transmit the postulated piping loads to concrete embedments in the containment shell. The penetration flued head design must be strong enough to transfer high mechanical loads and be flexible enough to accommodate the thermal stresses generated by the high temperature fluid. Analytical models using finite element representations of process piping, penetration flued head, and exposed sleeve were employed to investigate the penetration assembly design. By application of flexible multi-step analyses, different penetration configurations were evaluated to determine the effects of key design parameters. Among the parameters studied were flued head profiles, flued head angles with the process piping, sleeve length and wall thickness. Special designs employing fins welded to the sleeve to lower the temperature at the concrete wall interface were investigated and fin geometry effects reported

  17. Characterization of craniofacial sutures using the finite element method.

    Science.gov (United States)

    Maloul, Asmaa; Fialkov, Jeffrey; Wagner, Diane; Whyne, Cari M

    2014-01-03

    Characterizing the biomechanical behavior of sutures in the human craniofacial skeleton (CFS) is essential to understand the global impact of these articulations on load transmission, but is challenging due to the complexity of their interdigitated morphology, the multidirectional loading they are exposed to and the lack of well-defined suture material properties. This study aimed to quantify the impact of morphological features, direction of loading and suture material properties on the mechanical behavior of sutures and surrounding bone in the CFS. Thirty-six idealized finite element (FE) models were developed. One additional specimen-specific FE model was developed based on the morphology obtained from a µCT scan to represent the morphological complexity inherent in CFS sutures. Outcome variables of strain energy (SE) and von Mises stress (σvm) were evaluated to characterize the sutures' biomechanical behavior. Loading direction was found to impact the relationship between SE and interdigitation index and yielded varied patterns of σvm in both the suture and surrounding bone. Adding bone connectivity reduced suture strain energy and altered the σvm distribution. Incorporating transversely isotropic material properties was found to reduce SE, but had little impact on stress patterns. High-resolution µCT scanning of the suture revealed a complex morphology with areas of high and low interdigitations. The specimen specific suture model results were reflective of SE absorption and σvm distribution patterns consistent with the simplified FE results. Suture mechanical behavior is impacted by morphologic factors (interdigitation and connectivity), which may be optimized for regional loading within the CFS. © 2013 Elsevier Ltd. All rights reserved.

  18. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  19. Bottom-up nanoarchitecture of semiconductor nano-building blocks by controllable in situ SEM-FIB thermal soldering method

    KAUST Repository

    Zhang, Xuan

    2017-08-10

    Here we demonstrate that the building blocks of semiconductor WO3 nanowires can be controllably soldered together by a novel nano-soldering technique of in situ SEM-FIB thermal soldering, in which the soldering temperature can precisely remain in an optimal range to avoid a strong thermal diffusion.

  20. Simulation of charge transport in organic semiconductors: A time-dependent multiscale method based on nonequilibrium Green's functions

    DEFF Research Database (Denmark)

    Leitherer, Susanne; Jager, C. M.; Krause, A.

    2017-01-01

    In weakly interacting organic semiconductors, static disorder and dynamic disorder often have an important impact on transport properties. Describing charge transport in these systems requires an approach that correctly takes structural and electronic fluctuations into account. Here, we present...... are used in organic field-effect transistors....

  1. Bottom-up nanoarchitecture of semiconductor nano-building blocks by controllable in situ SEM-FIB thermal soldering method

    KAUST Repository

    Zhang, Xuan; Zheng, Xiujun; Zhang, Hong; Zhang, Junli; Fu, Jiecai; Zhang, Qiang; Peng, Chaoyi; Bai, Feiming; Zhang, Xixiang; Peng, Yong

    2017-01-01

    Here we demonstrate that the building blocks of semiconductor WO3 nanowires can be controllably soldered together by a novel nano-soldering technique of in situ SEM-FIB thermal soldering, in which the soldering temperature can precisely remain in an optimal range to avoid a strong thermal diffusion.

  2. Output power PDF of a saturated semiconductor optical amplifier: Second-order noise contributions by path integral method

    DEFF Research Database (Denmark)

    Öhman, Filip; Mørk, Jesper; Tromborg, Bjarne

    2007-01-01

    We have developed a second-order small-signal model for describing the nonlinear redistribution of noise in a saturated semiconductor optical amplifier. In this paper, the details of the model are presented. A numerical example is used to compare the model to statistical simulations. We show that...

  3. Fast multipole acceleration of the MEG/EEG boundary element method

    International Nuclear Information System (INIS)

    Kybic, Jan; Clerc, Maureen; Faugeras, Olivier; Keriven, Renaud; Papadopoulo, Theo

    2005-01-01

    The accurate solution of the forward electrostatic problem is an essential first step before solving the inverse problem of magneto- and electroencephalography (MEG/EEG). The symmetric Galerkin boundary element method is accurate but cannot be used for very large problems because of its computational complexity and memory requirements. We describe a fast multipole-based acceleration for the symmetric boundary element method (BEM). It creates a hierarchical structure of the elements and approximates far interactions using spherical harmonics expansions. The accelerated method is shown to be as accurate as the direct method, yet for large problems it is both faster and more economical in terms of memory consumption

  4. Incompressible spectral-element method: Derivation of equations

    Science.gov (United States)

    Deanna, Russell G.

    1993-01-01

    A fractional-step splitting scheme breaks the full Navier-Stokes equations into explicit and implicit portions amenable to the calculus of variations. Beginning with the functional forms of the Poisson and Helmholtz equations, we substitute finite expansion series for the dependent variables and derive the matrix equations for the unknown expansion coefficients. This method employs a new splitting scheme which differs from conventional three-step (nonlinear, pressure, viscous) schemes. The nonlinear step appears in the conventional, explicit manner, the difference occurs in the pressure step. Instead of solving for the pressure gradient using the nonlinear velocity, we add the viscous portion of the Navier-Stokes equation from the previous time step to the velocity before solving for the pressure gradient. By combining this 'predicted' pressure gradient with the nonlinear velocity in an explicit term, and the Crank-Nicholson method for the viscous terms, we develop a Helmholtz equation for the final velocity.

  5. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  6. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  7. Design of horizontal-axis wind turbine using blade element momentum method

    Science.gov (United States)

    Bobonea, Andreea; Pricop, Mihai Victor

    2013-10-01

    The study of mathematical models applied to wind turbine design in recent years, principally in electrical energy generation, has become significant due to the increasing use of renewable energy sources with low environmental impact. Thus, this paper shows an alternative mathematical scheme for the wind turbine design, based on the Blade Element Momentum (BEM) Theory. The results from the BEM method are greatly dependent on the precision of the lift and drag coefficients. The basic of BEM method assumes the blade can be analyzed as a number of independent element in spanwise direction. The induced velocity at each element is determined by performing the momentum balance for a control volume containing the blade element. The aerodynamic forces on the element are calculated using the lift and drag coefficient from the empirical two-dimensional wind tunnel test data at the geometric angle of attack (AOA) of the blade element relative to the local flow velocity.

  8. Spectral/hp element methods: Recent developments, applications, and perspectives

    DEFF Research Database (Denmark)

    Xu, Hui; Cantwell, Chris; Monteserin, Carlos

    2018-01-01

    regularity assumptions an exponential reduction in approximation error between numerical and exact solutions can be achieved. This method has now been applied in many simulation studies of both fundamental and practical engineering flows. This paper briefly describes the formulation of the spectral...... is based upon orthogonal polynomials, such as Legendre or Chebychev polynomials, modified to accommodate a C 0 - continuous expansion. Computationally and theoretically, by increasing the polynomial order p, high-precision solutions and fast convergence can be obtained and, in particular, under certain...

  9. Neutron radiative capture methods for surface elemental analysis

    Science.gov (United States)

    Trombka, J.I.; Senftle, F.; Schmadebeck, R.

    1970-01-01

    Both an accelerator and a 252Cf neutron source have been used to induce characteristic gamma radiation from extended soil samples. To demonstrate the method, measurements of the neutron-induced radiative capture and activation gamma rays have been made with both Ge(Li) and NaI(Tl) detectors, Because of the possible application to space flight geochemical analysis, it is believed that NaI(Tl) detectors must be used. Analytical procedures have been developed to obtain both qualitative and semiquantitative results from an interpretation of the measured NaI(Tl) pulse-height spectrum. Experiment results and the analytic procedure are presented. ?? 1970.

  10. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  11. Optimal Layout Design using the Element Connectivity Parameterization Method: Application to Three Dimensional Geometrical Nonlinear Structures

    DEFF Research Database (Denmark)

    Yoon, Gil Ho; Joung, Young Soo; Kim, Yoon Young

    2005-01-01

    The topology design optimization of “three-dimensional geometrically-nonlinear” continuum structures is still a difficult problem not only because of its problem size but also the occurrence of unstable continuum finite elements during the design optimization. To overcome this difficulty, the ele......) stiffness matrix of continuum finite elements. Therefore, any finite element code, including commercial codes, can be readily used for the ECP implementation. The key ideas and characteristics of these methods will be presented in this paper....

  12. Method of removing and recovering elemental sulfur from highly reducing gas streams containing sulfur gases

    Science.gov (United States)

    Gangwal, Santosh K.; Nikolopoulos, Apostolos A.; Dorchak, Thomas P.; Dorchak, Mary Anne

    2005-11-08

    A method is provided for removal of sulfur gases and recovery of elemental sulfur from sulfur gas containing supply streams, such as syngas or coal gas, by contacting the supply stream with a catalyst, that is either an activated carbon or an oxide based catalyst, and an oxidant, such as sulfur dioxide, in a reaction medium such as molten sulfur, to convert the sulfur gases in the supply stream to elemental sulfur, and recovering the elemental sulfur by separation from the reaction medium.

  13. Micromechanical Study of Interface Stress in a Fiber-Reinforced Composite under Transverse Loading Using Boundary Element Method

    National Research Council Canada - National Science Library

    Eren, Hakan

    2000-01-01

    .... The objective of this study is, by using Boundary Element Method, to examine different shapes of reinforcement elements under unit traction and unit displacement boundary conditions in transversal...

  14. A weak Galerkin least-squares finite element method for div-curl systems

    Science.gov (United States)

    Li, Jichun; Ye, Xiu; Zhang, Shangyou

    2018-06-01

    In this paper, we introduce a weak Galerkin least-squares method for solving div-curl problem. This finite element method leads to a symmetric positive definite system and has the flexibility to work with general meshes such as hybrid mesh, polytopal mesh and mesh with hanging nodes. Error estimates of the finite element solution are derived. The numerical examples demonstrate the robustness and flexibility of the proposed method.

  15. Parallel iterative procedures for approximate solutions of wave propagation by finite element and finite difference methods

    Energy Technology Data Exchange (ETDEWEB)

    Kim, S. [Purdue Univ., West Lafayette, IN (United States)

    1994-12-31

    Parallel iterative procedures based on domain decomposition techniques are defined and analyzed for the numerical solution of wave propagation by finite element and finite difference methods. For finite element methods, in a Lagrangian framework, an efficient way for choosing the algorithm parameter as well as the algorithm convergence are indicated. Some heuristic arguments for finding the algorithm parameter for finite difference schemes are addressed. Numerical results are presented to indicate the effectiveness of the methods.

  16. Method of manufacturing mixed stock powders for nuclear fuel elements

    International Nuclear Information System (INIS)

    Hirayama, Satoshi.

    1980-01-01

    Purpose: To alleviate the limit of the present reactor operating conditions by uniformly mixing an additive to the main content as an uranium dioxide or mixture of the uranium dioxide with plutonium dioxide. Method: A mixed stock powder is obtained by adding an additive of at least two of aluminium oxide, beryllium oxide, calcium oxide, magnesium oxide, silicon oxide, sodium oxide, potassium oxide, phosphorus oxide, titanium oxide and iron oxide to suspension having ammonia water as dispersion medium to start the deposition of precipitation at a step of precipitating ammonium diuranate or plutionium hydroxide of a main content of uranium dioxide or mixture of uranium dioxide and plutonium dioxide and deposited precipitate is calcinated and reduced. (Yoshihara, H.)

  17. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

  18. Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices

    CERN Document Server

    Merten, K; Bulirsch, R

    1990-01-01

    Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in­ cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con­ nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues dis...

  19. Comparison of ALE finite element method and adaptive smoothed finite element method for the numerical simulation of friction stir welding

    NARCIS (Netherlands)

    van der Stelt, A.A.; Bor, Teunis Cornelis; Geijselaers, Hubertus J.M.; Quak, W.; Akkerman, Remko; Huetink, Han; Menary, G

    2011-01-01

    In this paper, the material flow around the pin during friction stir welding (FSW) is simulated using a 2D plane strain model. A pin rotates without translation in a disc with elasto-viscoplastic material properties and the outer boundary of the disc is clamped. Two numerical methods are used to

  20. Crack modeling of rotating blades with cracked hexahedral finite element method

    Science.gov (United States)

    Liu, Chao; Jiang, Dongxiang

    2014-06-01

    Dynamic analysis is the basis in investigating vibration features of cracked blades, where the features can be applied to monitor health state of blades, detect cracks in an early stage and prevent failures. This work presents a cracked hexahedral finite element method for dynamic analysis of cracked blades, with the purpose of addressing the contradiction between accuracy and efficiency in crack modeling of blades in rotor system. The cracked hexahedral element is first derived with strain energy release rate method, where correction of stress intensity factors of crack front and formulation of load distribution of crack surface are carried out to improve the modeling accuracy. To consider nonlinear characteristics of time-varying opening and closure effects caused by alternating loads, breathing function is proposed for the cracked hexahedral element. Second, finite element method with contact element is analyzed and used for comparison. Finally, validation of the cracked hexahedral element is carried out in terms of breathing effects of cracked blades and natural frequency in different crack depths. Good consistency is acquired between the results with developed cracked hexahedral element and contact element, while the computation time is significantly reduced in the previous one. Therefore, the developed cracked hexahedral element achieves good accuracy and high efficiency in crack modeling of rotating blades.

  1. Element analysis on Japanese ancient glass by PIXE method

    International Nuclear Information System (INIS)

    Koizumi, Y.; Kobayashi, K.

    2001-01-01

    The authors analyzed ancient glasses using PIXE (particle induced X-ray emission) method associated with the accelerator used for the trace analysis of environments and organisms. They examined whether the material properties of the glasses made by ancient technology have correlation with those of each era or each region both in and out of Japan. The alkali lime glasses excavated from Japanese ancient ruins are classified as soda lime glasses and potash lime glasses, and intermediate glasses containing both are also detected. As for the glasses between the late Yayoi period and the early Tumulus period in eastern Japan, glass beads were mostly classified as potash lime glasses. In the mid and late Tumulus periods, soda lime glasses and the glasses with an intermediate composition increased in addition to potash lime glasses. In the analysis of the glass beads excavated from the ruins of the late Yayoi period to the early Tumult period in Tsushima, potash lime glasses and soda lime glasses coexisted in the same period. Most of the coloring components of deep-blue system mostly found in eastern Japan were manganese and iron, and the coloring components such as blue, green, sky blue, etc. were copper. Yellow was the color expressed with lead or lead - iron. The coloring materials were common regardless of the classification of glasses based on main components. (A.O.)

  2. Research of carbon composite material for nonlinear finite element method

    Science.gov (United States)

    Kim, Jung Ho; Garg, Mohit; Kim, Ji Hoon

    2012-04-01

    Works on the absorption of collision energy in the structural members are carried out widely with various material and cross-sections. And, with ever increasing safety concerns, they are presently applied in various fields including railroad trains, air crafts and automobiles. In addition to this, problem of lighting structural members became important subject by control of exhaust gas emission, fuel economy and energy efficiency. CFRP(Carbon Fiber Reinforced Plastics) usually is applying the two primary structural members because of different result each design parameter as like stacking thickness, stacking angle, moisture absorption ect. We have to secure the data for applying primary structural members. But it always happens to test design parameters each for securing the data. So, it has much more money and time. We can reduce the money and the time, if can ensure the CFRP material properties each design parameters. In this study, we experiment the coupon test each tension, compression and shear using CFRP prepreg sheet and simulate non-linear analyze at the sources - test result, Caron longitudinal modulus and matrix poisson's ratio using GENOAMQC is specialized at Composite analysis. And then we predict the result that specimen manufacture changing stacking angle and experiment in such a way of test method using GENOA-MCQ.

  3. Modelling of Conveyor Belt Passage by Driving Drum Using Finite Element Methods

    Directory of Open Access Journals (Sweden)

    Nikoleta Mikušová

    2017-12-01

    Full Text Available The finite element methods are used in many disciplines by the development of products, typically in mechanical engineering (for example in automotive industry, biomechanics, etc.. Some modern programs of the finite element's methods have specific tools (electromagnetic, fluid and structural simulations. The finite elements methods allow detailed presentation of structures by bending or torsion, complete design, testing and optimization before the prototype production. The aims of this paper were to the model of conveyor belt passage by driving drum. The model was created by the program Abaqus CAE. The created model presented data about forces, pressures, and deformation of the belt conveyor.

  4. Introduction to the Explicit Finite Element Method for Nonlinear Transient Dynamics

    CERN Document Server

    Wu, Shen R

    2012-01-01

    A systematic introduction to the theories and formulations of the explicit finite element method As numerical technology continues to grow and evolve with industrial applications, understanding the explicit finite element method has become increasingly important, particularly in the areas of crashworthiness, metal forming, and impact engineering. Introduction to the Explicit FiniteElement Method for Nonlinear Transient Dynamics is the first book to address specifically what is now accepted as the most successful numerical tool for nonlinear transient dynamics. The book aids readers in master

  5. A finite element modeling method for predicting long term corrosion rates

    International Nuclear Information System (INIS)

    Fu, J.W.; Chan, S.

    1984-01-01

    For the analyses of galvanic corrosion, pitting and crevice corrosion, which have been identified as possible corrosion processes for nuclear waste isolation, a finite element method has been developed for the prediction of corrosion rates. The method uses a finite element mesh to model the corrosive environment and the polarization curves of metals are assigned as the boundary conditions to calculate the corrosion cell current distribution. A subroutine is used to calculate the chemical change with time in the crevice or the pit environments. In this paper, the finite element method is described along with experimental confirmation

  6. Method for the removal of elemental mercury from a gas stream

    Science.gov (United States)

    Mendelsohn, M.H.; Huang, H.S.

    1999-05-04

    A method is provided to remove elemental mercury from a gas stream by reacting the gas stream with an oxidizing solution to convert the elemental mercury to soluble mercury compounds. Other constituents are also oxidized. The gas stream is then passed through a wet scrubber to remove the mercuric compounds and oxidized constituents. 7 figs.

  7. Method for the removal of elemental mercury from a gas stream

    Science.gov (United States)

    Mendelsohn, Marshall H.; Huang, Hann-Sheng

    1999-01-01

    A method is provided to remove elemental mercury from a gas stream by reacting the gas stream with an oxidizing solution to convert the elemental mercury to soluble mercury compounds. Other constituents are also oxidized. The gas stream is then passed through a wet scrubber to remove the mercuric compounds and oxidized constituents.

  8. An introductory study of the convergence of the direct boundary element method

    DEFF Research Database (Denmark)

    Juhl, Peter Møller

    1997-01-01

    of an axisymmetric boundary element formulation is studied using linear, quadratic or superparametric elements. It is demonstrated that the rate of convergence of these formulations is reduced for calculations involving bodies with edges (geometric singularities). Two methods for improving the rate of convergence...

  9. Multisymplectic Structure-Preserving in Simple Finite Element Method in High Dimensional Case

    Institute of Scientific and Technical Information of China (English)

    BAIYong-Qiang; LIUZhen; PEIMing; ZHENGZhu-Jun

    2003-01-01

    In this paper, we study a finite element scheme of some semi-linear elliptic boundary value problems in high-dhnensjonal space. With uniform mesh, we find that, the numerical scheme derived from finite element method can keep a preserved multisymplectic structure.

  10. Multisymplectic Structure-Preserving in Simple Finite Element Method in High Dimensional Case

    Institute of Scientific and Technical Information of China (English)

    BAI Yong-Qiang; LIU Zhen; PEI Ming; ZHENG Zhu-Jun

    2003-01-01

    In this paper, we study a finite element scheme of some semi-linear elliptic boundary value problems inhigh-dimensional space. With uniform mesh, we find that, the numerical scheme derived from finite element method cankeep a preserved multisymplectic structure.

  11. Application of finite element method in the solution of transport equation

    International Nuclear Information System (INIS)

    Maiorino, J.R.; Vieira, W.J.

    1985-01-01

    It is presented the application of finite element method in the solution of second order transport equation (self-adjoint) for the even parity flux. The angular component is treated by expansion in Legendre polinomials uncoupled of the spatial component, which is approached by an expansion in base functions, interpolated in each spatial element. (M.C.K.) [pt

  12. Determination of trace elements in standard reference materials by the ko-standardization method

    International Nuclear Information System (INIS)

    Smodis, B.; Jacimovic, R.; Stegnar, P.; Jovanovic, S.

    1990-01-01

    The k o -standardization method is suitable for routine multielement determinations by reactor neutron activation analysis (NAA). Investigation of NIST standard reference materials SRM 1571 Orchard Leaves, SRM 1572 Citrus leaves, and SRM 1573 Tomato Leaves showed the systematic error of 12 certified elements determined to be less than 8%. Thirty-four elements were determined in NIST proposed SRM 1515 Apple Leaves

  13. Temperature and stress distribution in pressure vessel by the boundary element method

    International Nuclear Information System (INIS)

    Alujevic, A.; Apostolovic, D.

    1990-01-01

    The aim of this paper is to demonstrate the applicability of boundary element method for the solution of temperatures and thermal stresses in the body of reactor pressure vessel of the NPP Krsko . In addition to the theory of boundary elements for thermo-elastic continua (2D, 3D) results are given of a numerically evaluated meridional cross-section. (author)

  14. Method of making a self-aligned schottky metal semi-conductor field effect transistor with buried source and drain

    International Nuclear Information System (INIS)

    Bol, I.

    1984-01-01

    A semi-conductor structure and particularly a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source and drain areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried source and drain areas thereby providing effective vertical separation of the channel from the buried source and drain respectively. Accordingly, spatial separations between the self-aligned gate-to-drain, and gate-to-source can be relatively very closely controlled by varying the doping intensity and duration of the implantation thereby reducing the series resistance and increasing the operating speed

  15. Bubble-Enriched Least-Squares Finite Element Method for Transient Advective Transport

    Directory of Open Access Journals (Sweden)

    Rajeev Kumar

    2008-01-01

    Full Text Available The least-squares finite element method (LSFEM has received increasing attention in recent years due to advantages over the Galerkin finite element method (GFEM. The method leads to a minimization problem in the L2-norm and thus results in a symmetric and positive definite matrix, even for first-order differential equations. In addition, the method contains an implicit streamline upwinding mechanism that prevents the appearance of oscillations that are characteristic of the Galerkin method. Thus, the least-squares approach does not require explicit stabilization and the associated stabilization parameters required by the Galerkin method. A new approach, the bubble enriched least-squares finite element method (BELSFEM, is presented and compared with the classical LSFEM. The BELSFEM requires a space-time element formulation and employs bubble functions in space and time to increase the accuracy of the finite element solution without degrading computational performance. We apply the BELSFEM and classical least-squares finite element methods to benchmark problems for 1D and 2D linear transport. The accuracy and performance are compared.

  16. Adaptive Multilevel Methods with Local Smoothing for $H^1$- and $H^{\\mathrm{curl}}$-Conforming High Order Finite Element Methods

    KAUST Repository

    Janssen, Bä rbel; Kanschat, Guido

    2011-01-01

    A multilevel method on adaptive meshes with hanging nodes is presented, and the additional matrices appearing in the implementation are derived. Smoothers of overlapping Schwarz type are discussed; smoothing is restricted to the interior of the subdomains refined to the current level; thus it has optimal computational complexity. When applied to conforming finite element discretizations of elliptic problems and Maxwell equations, the method's convergence rates are very close to those for the nonadaptive version. Furthermore, the smoothers remain efficient for high order finite elements. We discuss the implementation in a general finite element code using the example of the deal.II library. © 2011 Societ y for Industrial and Applied Mathematics.

  17. Trace elements in cigarette tobacco by a method of instrumental neutron activation analysis

    International Nuclear Information System (INIS)

    Noordin Ibrahim

    1986-01-01

    A total of ten cigarette brands were investigated for determining the trace elemental concentrations in tobacco so as to assess their role in the induction of related diseases through smoking. A method instrumental Neutron Activation analysis was employed due to high sensitivity, speed and ability to analyse sample for a wide spectrum of elements simultaneously. A total of 18 elements were detected of which the majority are toxic elements. A full result and conclusion will be reported in the forthcoming paper. (A.J.)

  18. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  19. Trace elements detection in whole food samples by Neutron Activation Analysis, k0-method

    International Nuclear Information System (INIS)

    Sathler, Márcia Maia; Menezes, Maria Ângela de Barros Correia; Salles, Paula Maria Borges de

    2017-01-01

    Inorganic elements, from natural and anthropogenic sources are present in foods in different concentrations. With the increase in anthropogenic activities, there was also a considerable increase in the emission of these elements in the environment, leading to the need of monitoring the elemental composition of foods available for consumption. Numerous techniques have been used to detect inorganic elements in biological and environmental matrices, always aiming at reaching lower detection limits in order to evaluate the trace element content in the sample. Neutron activation analysis (INAA), applying the k 0 -method, produces accurate and precise results without the need of chemical preparation of the samples – that could cause their contamination. This study evaluated the presence of inorganic elements in whole foods samples, mainly elements on trace levels. For this purpose, seven samples of different types of whole foods were irradiated in the TRIGA MARK I IPR-R1 research reactor - located at CDTN/CNEN, in Belo Horizonte, MG. It was possible to detect twenty two elements above the limit of detection in, at least, one of the samples analyzed. This study reaffirms the INAA, k 0 - method, as a safe and efficient technique for detecting trace elements in food samples. (author)

  20. Trace elements detection in whole food samples by Neutron Activation Analysis, k{sub 0}-method

    Energy Technology Data Exchange (ETDEWEB)

    Sathler, Márcia Maia; Menezes, Maria Ângela de Barros Correia, E-mail: maia.sathler@gmail.com, E-mail: menezes@cdtn.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil); Salles, Paula Maria Borges de, E-mail: pauladesalles@yahoo.com.br [Universidade Federal de Minas Gerais (DEN/UFMG), Belo Horizonte, MG (Brazil). Departamento de Engenharia Nuclear

    2017-07-01

    Inorganic elements, from natural and anthropogenic sources are present in foods in different concentrations. With the increase in anthropogenic activities, there was also a considerable increase in the emission of these elements in the environment, leading to the need of monitoring the elemental composition of foods available for consumption. Numerous techniques have been used to detect inorganic elements in biological and environmental matrices, always aiming at reaching lower detection limits in order to evaluate the trace element content in the sample. Neutron activation analysis (INAA), applying the k{sub 0}-method, produces accurate and precise results without the need of chemical preparation of the samples – that could cause their contamination. This study evaluated the presence of inorganic elements in whole foods samples, mainly elements on trace levels. For this purpose, seven samples of different types of whole foods were irradiated in the TRIGA MARK I IPR-R1 research reactor - located at CDTN/CNEN, in Belo Horizonte, MG. It was possible to detect twenty two elements above the limit of detection in, at least, one of the samples analyzed. This study reaffirms the INAA, k{sub 0} - method, as a safe and efficient technique for detecting trace elements in food samples. (author)