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Sample records for semiconductor alloy thermoelectric

  1. Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors

    Science.gov (United States)

    Kim, Il-Ho

    2018-05-01

    Thermoelectric materials can convert thermal energy directly into electric energy and vice versa. The electricity generation from waste heat via thermoelectric devices can be considered as a new energy source. For instance, automotive exhaust gas and all industrial processes generate an enormous amount of waste heat that can be converted to electricity by using thermoelectric devices. Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Mg2BIV has been recognized as a promising material for thermoelectric energy conversion at temperatures ranging from 500 K to 800 K. Compared to other thermoelectric materials operating in the similar temperature range, such as PbTe and filled skutterudites, the important aspects of Mg2BIV are non-toxic and earth-abundant elements. Based on classical thermoelectric theory, the material factor β ( m* / m e)3/2μκ L -1 can be utilized as the criterion for thermoelectric material selection, where m* is the density-of-states effective mass, me is the mass of an electron, μ is the carrier mobility, and κL is the lattice thermal conductivity. The β for magnesium silicides is 14, which is very high compared to 0.8 for iron silicides, 1.4 for manganese silicides, and 2.6 for silicon-germanium alloys. In this paper, basic phenomena of thermoelectricity and transport parameters for thermoelectric materials were briefly introduced, and thermoelectric properties of Mg2BIV synthesized by using a solid-state reaction were reviewed. In addition, various Mg2BIV compounds were discussed

  2. Semiconductor thermoelectric generators

    CERN Document Server

    Fahrner, Wolfgang R

    2009-01-01

    It is well-known that fossil fuels are being rapidly depleted, and that atomic power is rejected by many people. As a consequence, there is a strong trend towards alternative sources such as wind, photovoltaics, solar heat and biomass. Strangely enough, quite another power source is generally neglected: namely, the thermoelectric generator (a device which converts heat, i.e. thermal energy, directly into electrical energy). The reason for this neglect is probably the low conversion efficiency, which is of the order of a few percent at most. However, there are two arguments in favor of the ther

  3. Dynamic thermoelectricity in uniform bipolar semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Volovichev, I.N., E-mail: vin@ire.kharkov.ua

    2016-07-01

    The theory of the dynamic thermoelectric effect has been developed. The effect lies in an electric current flowing in a closed circuit that consists of a uniform bipolar semiconductor, in which a non-uniform temperature distribution in the form of the traveling wave is created. The calculations are performed for the one-dimensional model in the quasi-neutrality approximation. It was shown that the direct thermoelectric current prevails, despite the periodicity of the thermal excitation, the circuit homogeneity and the lack of rectifier properties of the semiconductor system. Several physical reasons underlining the dynamic thermoelectric effect are found. One of them is similar to the Dember photoelectric effect, its contribution to the current flowing is determined by the difference in the electron and hole mobilities, and is completely independent of the carrier Seebeck coefficients. The dependence of the thermoelectric short circuit current magnitude on the semiconductor parameters, as well as on the temperature wave amplitude, length and velocity is studied. It is shown that the magnitude of the thermoelectric current is proportional to the square of the temperature wave amplitude. The dependence of the thermoelectric short circuit current on the temperature wave length and velocity is the nonmonotonic function. The optimum values for the temperature wave length and velocity, at which the dynamic thermoelectric effect is the greatest, have been deduced. It is found that the thermoelectric short circuit current changes its direction with decreasing the temperature wave length under certain conditions. The prospects for the possible applications of the dynamic thermoelectric effect are also discussed.

  4. Thermoelectricity in correlated narrow-gap semiconductors

    Science.gov (United States)

    Tomczak, Jan M.

    2018-05-01

    We review many-body effects, their microscopic origin, as well as their impact on thermoelectricity in correlated narrow-gap semiconductors. Members of this class—such as FeSi and FeSb2—display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie–Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators—such as Ce3Bi4Pt3 for which we present new results—and propose a general classification of paramagnetic insulators. From the latter, FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as silicides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we explore new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance.

  5. Thermoelectric properties of semiconductor nanowire networks

    Science.gov (United States)

    Roslyak, Oleksiy; Piryatinski, Andrei

    2016-03-01

    To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

  6. Instrument for measuring metal-thermoelectric semiconductor contact resistence

    International Nuclear Information System (INIS)

    Lanxner, M.; Nechmadi, M.; Meiri, B.; Schildkraut, I.

    1979-02-01

    An instrument for measuring electrical, metal-thermoelectric semiconductor contact resistance is described. The expected errors of measurement are indicated. The operation of the instrument which is based on potential traversing perpendicularly to the contact plane is illustrated for the case of contacts of palladium and bismuth telluride-based thermoelectric material

  7. High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

    Science.gov (United States)

    Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

    2015-01-01

    The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

  8. Electronic fitness function for screening semiconductors as thermoelectric materials

    International Nuclear Information System (INIS)

    Xing, Guangzong; Sun, Jifeng; Li, Yuwei; Fan, Xiaofeng

    2017-01-01

    Here, we introduce a simple but efficient electronic fitness function (EFF) that describes the electronic aspect of the thermoelectric performance. This EFF finds materials that overcome the inverse relationship between σ and S based on the complexity of the electronic structures regardless of specific origin (e.g., isosurface corrugation, valley degeneracy, heavy-light bands mixture, valley anisotropy or reduced dimensionality). This function is well suited for application in high throughput screening. We applied this function to 75 different thermoelectric and potential thermoelectric materials including full- and half-Heuslers, binary semiconductors, and Zintl phases. We find an efficient screening using this transport function. The EFF identifies known high-performance p- and n-type Zintl phases and half-Heuslers. In addition, we find some previously unstudied phases with superior EFF.

  9. High efficiency semimetal/semiconductor nanocomposite thermoelectric materials

    International Nuclear Information System (INIS)

    Zide, J. M. O.; Bahk, J.-H.; Zeng, G.; Bowers, J. E.; Singh, R.; Zebarjadi, M.; Bian, Z. X.; Shakouri, A.; Lu, H.; Gossard, A. C.; Feser, J. P.; Xu, D.; Singer, S. L.; Majumdar, A.

    2010-01-01

    Rare-earth impurities in III-V semiconductors are known to self-assemble into semimetallic nanoparticles which have been shown to reduce lattice thermal conductivity without harming electronic properties. Here, we show that adjusting the band alignment between ErAs and In 0.53 Ga 0.47-X Al X As allows energy-dependent scattering of carriers that can be used to increase thermoelectric power factor. Films of various Al concentrations were grown by molecular beam epitaxy, and thermoelectric properties were characterized. We observe concurrent increases in electrical conductivity and Seebeck coefficient with increasing temperatures, demonstrating energy-dependent scattering. We report the first simultaneous power factor enhancement and thermal conductivity reduction in a nanoparticle-based system, resulting in a high figure of merit, ZT=1.33 at 800 K.

  10. Thermoelectric transport properties of high mobility organic semiconductors

    Science.gov (United States)

    Venkateshvaran, Deepak; Broch, Katharina; Warwick, Chris N.; Sirringhaus, Henning

    2016-09-01

    Transport in organic semiconductors has traditionally been investigated using measurements of the temperature and gate voltage dependent mobility of charge carriers within the channel of organic field-effect transistors (OFETs). In such measurements, the behavior of charge carrier mobility with temperature and gate voltage, studied together with carrier activation energies, provide a metric to quantify the extent of disorder within these van der Waals bonded materials. In addition to the mobility and activation energy, another potent but often-overlooked transport coefficient useful in understanding disorder is the Seebeck coefficient (also known as thermoelectric power). Fundamentally, the Seebeck coefficient represents the entropy per charge carrier in the solid state, and thus proves powerful in distinguishing materials in which charge carriers move freely from those where a high degree of disorder causes the induced carriers to remain trapped. This paper briefly covers the recent highlights in the field of organic thermoelectrics, showing how significant strides have been made both from an applied standpoint as well as from a viewpoint of fundamental thermoelectric transport physics. It shall be illustrated how thermoelectric transport parameters in organic semiconductors can be tuned over a significant range, and how this tunability facilitates an enhanced performance for heat-to-electricity conversion as well as quantifies energetic disorder and the nature of the density of states (DOS). The work of the authors shall be spotlighted in this context, illustrating how Seebeck coefficient measurements in the polymer indacenodithiophene-co-benzothiadiazole (IDTBT) known for its ultra-low degree of torsion within the polymer backbone, has a trend consistent with low disorder. 1 Finally, using examples of the small molecules C8-BTBT and C10-DNTT, it shall be discussed how the Seebeck coefficient can aid the estimation of the density and distribution of trap states

  11. Methods for synthesis of semiconductor nanocrystals and thermoelectric compositions

    Science.gov (United States)

    Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Dresselhaus, Mildred (Inventor); Ren, Zhifeng (Inventor); Wang, Wenzhong (Inventor)

    2007-01-01

    The present invention provides methods for synthesis of IV VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20.degree. C. to about 360.degree. C., for a duration sufficient for generating nanoparticles as binary alloys of the IV VI elements.

  12. Thermoelectric Performance Enhancement by Surrounding Crystalline Semiconductors with Metallic Nanoparticles

    Science.gov (United States)

    Kim, Hyun-Jung; King, Glen C.; Park, Yeonjoon; Lee, Kunik; Choi, Sang H.

    2011-01-01

    Direct conversion of thermal energy to electricity by thermoelectric (TE) devices may play a key role in future energy production and utilization. However, relatively poor performance of current TE materials has slowed development of new energy conversion applications. Recent reports have shown that the dimensionless Figure of Merit, ZT, for TE devices can be increased beyond the state-of-the-art level by nanoscale structuring of materials to reduce their thermal conductivity. New morphologically designed TE materials have been fabricated at the NASA Langley Research Center, and their characterization is underway. These newly designed materials are based on semiconductor crystal grains whose surfaces are surrounded by metallic nanoparticles. The nanoscale particles are used to tailor the thermal and electrical conduction properties for TE applications by altering the phonon and electron transport pathways. A sample of bismuth telluride decorated with metallic nanoparticles showed less thermal conductivity and twice the electrical conductivity at room temperature as compared to pure Bi2Te3. Apparently, electrons cross easily between semiconductor crystal grains via the intervening metallic nanoparticle bridges, but phonons are scattered at the interfacing gaps. Hence, if the interfacing gap is larger than the mean free path of the phonon, thermal energy transmission from one grain to others is reduced. Here we describe the design and analysis of these new materials that offer substantial improvements in thermoelectric performance.

  13. Thermoelectrical power analysis of precipitation in 6013 aluminum alloy

    International Nuclear Information System (INIS)

    Abdala, M.R.W.S.; Garcia de Blas, J.C.; Barbosa, C.; Acselrad, O.

    2008-01-01

    The 6013 aluminum alloy was first developed for application in the aircraft industry and, more recently, as a replacement option for the use of the 6061 alloy in the automotive industry. The present work describes the evolution of the process of formation and dissolution of different kinds of precipitates in 6013 aluminum alloy, subjected to different conditions of heat treatment, using for this purpose measurements of thermoelectrical power, Vickers microhardness and differential scanning calorimeter (DSC). Although in the last years many works have been published on the use of thermoelectrical power (TEP) measurements for the analysis of precipitation process in traditional alloys such as 6061, there is still little information related to 6013 alloy. The results obtained are compared with a previous characterization work on the same alloy using transmission electron microscopy. It was observed that TEP measurements are very sensitive to precipitation phenomena in this alloy, and it has been found that there is an inverse relation between TEP and Vickers microhardness values, which allowed proposing a precipitation sequence for 6013 aluminum alloy

  14. CONVERTER SOLAR RADIATION INTO ELECTRICITY TO SUPPLY THE AUTOMOTIVE SEMICONDUCTOR THERMOELECTRIC AIR CONDITIONING

    Directory of Open Access Journals (Sweden)

    T. A. Ismailov

    2015-01-01

    Full Text Available The article considers the possibility to increase the efficiency of converters of solar radiation into electricity by combining constructive photoelectric effect, See-beck thermoeffect and semiconductor solar cells, which will create integrated device to provide power semiconductor thermoelectric automobile air conditioner. 

  15. Half-Heusler Alloys as Promising Thermoelectric Materials

    Science.gov (United States)

    Page, Alexander A.

    This thesis describes Ph.D. research on the half-Heusler class of thermoelectric materials. Half-Heusler alloys are a versatile class of materials that have been studied for use in photovoltaics, phase change memory, and thermoelectric power generation. With respect to thermoelectric power generation, new approaches were recently developed in order to improve the thermoelectric figure of merit, ZT, of half-Heusler alloys. Two of the strategies discussed in this work are adding excess Ni within MNiSn (M = Ti, Zr, or Hf) compounds to form full-Heusler nanostructures and using isoelectronic substitution of Ti, Zr, and Hf in MNiSn compounds to create microscale grain boundaries. This work uses computational simulations based on density functional theory, combined with the cluster expansion method, to predict the stable phases of pseudo-binary and pseudo-ternary composition systems. Statistical mechanics methods were used to calculate temperature-composition phase diagrams that relate the equilibrium phases. It is shown that full-Heusler nanostructures are predicted to remain stable even at high temperatures, and the microscale grain boundaries observed in (Ti,Zr,Hf)NiSn materials are found to be thermodynamically unstable at equilibrium. A new strategy of combining MNiSn materials with ZrNiPb has also recently emerged, and theoretical and experimental work show that a solid solution of the two materials is stable.

  16. Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.

    Science.gov (United States)

    Hung, Nguyen T; Hasdeo, Eddwi H; Nugraha, Ahmad R T; Dresselhaus, Mildred S; Saito, Riichiro

    2016-07-15

    We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones.

  17. Synthesis, Processing, and Thermoelectric Properties of Germanium-Antimony-Tellurium Based Compounds and Alloys

    Science.gov (United States)

    Williams, Jared Brett

    Society has become increasingly more aware of the negative impacts which nonrenewable energy sources have on the environment, and therefore the search for new and more efficient means of energy production has become an important research endeavor. Thermoelectric modules possess the unique ability to convert wasted heat into useful electrical energy via solid state processes, which could vastly improve the efficiency of a number of applications. The materials which accomplish this are typically comprised of semiconductors which exhibit high electrical conductivity, Seebeck coefficient, and thermal resistivity. Together these properties give us a gauge for the overall efficiency of the thermal to electrical energy conversion. Phase change materials are a class of materials primarily used for optical data storage in CDs, DVDs, and Blu-Ray discs. Today's state of the art phase change materials are based on alloys of GeTe and Sb2Te3. These materials have also been found to exhibit high thermoelectric efficiencies. These high efficiencies stem from their complex crystal structure and degenerate semiconducting nature. The purpose of this work was to study and engineer the thermoelectric properties of various alloys and compounds which belong to this family of materials. Specifically studied were the compounds Ge4SbTe5 and Ge17Sb2Te20. In each case various synthesis and processing strategies were implemented to increase the thermoelectric performance and better understand the fundamental electrical and thermal properties. Finally various proposals for future work on these materials are presented, all of which are based on the findings described herein.

  18. Thermoelectric power of small polarons in magnetic semiconductors

    International Nuclear Information System (INIS)

    Liu, N.H.; Emin, D.

    1984-01-01

    The thermoelectric power (Seebeck coefficient) α of a small polaron in both ferromagnetic and antiferromagnetic semiconductors and insulators is calculated for the first time. In particular, we obtain the contribution to the Seebeck coefficient arising from exchange interactions between the severely localized carrier (i.e., small polaron) of charge q and the spins of the host lattice. In essence, we study the heat transported along with a carrier. This heat, the Peltier heat, Pi, is related to the Seebeck coefficient by the Kelvin relation: Pi = qTα, where T is the temperature. The heat per carrier is simply the product of the temperature and the change of the entropy of the system when a small polaron is added to it. The magnetic contribution to the Seebeck coefficient is therefore directly related to the change of the magnetic entropy of the system upon introduction of a charge carrier. We explicitly treat the intrasite and intersite exchange interactions between a small polaron and the spins of a spin-1/2 system. These magnetic interactions produce two competing contributions to the Seebeck coefficient. First, adding the carrier tends to provide extra spin freedom (e.g., spin up or spin down of the carrier). This effect augments the entropy of the system, thereby producing a positive contribution to the Peltier heat. Second, however, the additional exchange between the carrier and the sites about it enhances the exchange binding among these sites. This generally reduces the energetically allowable spin configurations. The concomitant reduction of the system's entropy provides a negative contribution to the Peltier heat. At the highest of temperatures, when kT exceeds the intrasite exchange energy, the first effect dominates. Then, the Peltier heat is simply augmented by kT ln2

  19. Measurement of thermoelectric power of Fe-Cu binary alloys

    International Nuclear Information System (INIS)

    Joubouji, Katsuo

    2007-01-01

    In INSS, non-destructive evaluation (NDE) of irradiation embrittlement of low alloy steel using thermoelectric power (TEP) measurement has been considered, as well as NDE of thermal aging of cast duplex stainless steel which has been studied in recent years. Material degradation is evaluated based on a relation between progress of the degradation and change in TEP due to change in material structure caused by the degradation event. So it is necessary for NDE of irradiation embrittlement to measure the change in TEP due to precipitation of Cu contained as an impurity, which is known as one of the reasons for the embrittlement. In this study, TEP of Fe-Cu binary alloys with different Cu content was measured for investigation of the relationship between TEP of the alloys and Cu content. In addition, appropriateness of measuring TEP of Fe-Cu binary alloy in the same way to measure TEP of duplex stainless steel was examined. It was found that increment of Cu contained in the alloys changed TEP in a negative direction and the rate was evaluated as -6.6μV/K/wt%Cu. There were the cases that it took 20 minutes for measurement values to become stable in measurement of Fe-Cu binary alloys. It was much longer than the time taken in measurement of duplex stainless steel. So the measurement time per a point was extended to 60 minutes in case of Fe-Cu binary alloys. (author)

  20. High Tc Superconducting Magnet Excited by a Semiconductor Thermoelectric Element

    Science.gov (United States)

    Kuriyama, T.; Ono, M.; Tabe, S.; Oguchi, A.; Okamura, T.

    2006-04-01

    A high Tc superconducting (HTS) magnet excited by a thermal electromotive force of a thermoelectric element is studied. This HTS magnet has the advantages of compactness, lightweight and continuous excitation in comparison with conventional HTS magnets, because this HTS magnet does not need a large external power source. In this system, a heat input into the cryogenic environment is necessary to excite the thermoelectric element for constant operation. This heat generation, however, causes a rise in temperature of an HTS coil and reduces the system performance. In this paper, a newly designed magnet system which adopted a two-stage GM cryocooler was investigated. It enabled us to control the temperature of a thermoelectric element and that of an HTS coil independently. The temperature of the HTS coil could be kept at 10-20 K at the second stage of the GM cryocooler, while the thermoelectric element could be excited at higher temperature in the range of 50-70 K at the first stage, where the performance of the thermoelectric element was higher. The experimental results on this HTS magnet are shown and the possibility of the thermoelectric element as a main power source of the HTS magnets is discussed.

  1. High-entropy alloys as high-temperature thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Shafeie, Samrand [Surface and Microstructure Engineering Group, Materials and Manufacturing Technology, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Department of Chemistry and Chemical Engineering, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Guo, Sheng, E-mail: sheng.guo@chalmers.se [Surface and Microstructure Engineering Group, Materials and Manufacturing Technology, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Hu, Qiang [Institute of Applied Physics, Jiangxi Academy of Sciences, Nanchang 330029 (China); Fahlquist, Henrik [Bruker AXS Nordic AB, 17067 Solna (Sweden); Erhart, Paul [Department of Applied Physics, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Palmqvist, Anders, E-mail: anders.palmqvist@chalmers.se [Department of Chemistry and Chemical Engineering, Chalmers University of Technology, SE-41296 Gothenburg (Sweden)

    2015-11-14

    Thermoelectric (TE) generators that efficiently recycle a large portion of waste heat will be an important complementary energy technology in the future. While many efficient TE materials exist in the lower temperature region, few are efficient at high temperatures. Here, we present the high temperature properties of high-entropy alloys (HEAs), as a potential new class of high temperature TE materials. We show that their TE properties can be controlled significantly by changing the valence electron concentration (VEC) of the system with appropriate substitutional elements. Both the electrical and thermal transport properties in this system were found to decrease with a lower VEC number. Overall, the large microstructural complexity and lower average VEC in these types of alloys can potentially be used to lower both the total and the lattice thermal conductivity. These findings highlight the possibility to exploit HEAs as a new class of future high temperature TE materials.

  2. Soft Chemistry, Coloring and Polytypism in Filled Tetrahedral Semiconductors: Toward Enhanced Thermoelectric and Battery Materials.

    Science.gov (United States)

    White, Miles A; Medina-Gonzalez, Alan M; Vela, Javier

    2018-03-12

    Filled tetrahedral semiconductors are a rich family of compounds with tunable electronic structure, making them ideal for applications in thermoelectrics, photovoltaics, and battery anodes. Furthermore, these materials crystallize in a plethora of related structures that are very close in energy, giving rise to polytypism through the manipulation of synthetic parameters. This Minireview highlights recent advances in the solution-phase synthesis and nanostructuring of these materials. These methods enable the synthesis of metastable phases and polytypes that were previously unobtainable. Additionally, samples synthesized in solution phase have enhanced thermoelectric performance due to their decreased grain size. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Overcoming Limitations in Semiconductor Alloy Design

    Science.gov (United States)

    Christian, Theresa Marie

    Inorganic semiconductors provide an astonishingly versatile, robust, and efficient platform for optoelectronic energy conversion devices. However, conventional alloys and growth regimes face materials challenges that restrict the full potential of these devices. Novel alloy designs based on isoelectronic co-doping, metamorphic growth and controllable atomic ordering offer new pathways to practical and ultra-high-efficiency optoelectronic devices including solar cells and light-emitting diodes. Abnormal isoelectronic alloys of GaP1-xBix, GaP 1-x-yBixNy, and GaAs1-xBix with unprecedented bismuth incorporation fractions and crystalline quality are explored in this thesis research. Comparative studies of several GaP1-xBix and GaP1-x-yBixNy alloys demonstrate that the site-specific incorporation of bismuth during epitaxial growth is sensitive to growth temperature and has dramatic effects on carrier transfer processes in these alloys. Additionally, distinctive bismuth-related localized states are spectrally identified for the first time in samples of GaAs1-xBix grown by laser-assisted epitaxial growth. These results address fundamental questions about the nature of bismuth-bismuth inter-impurity interactions. Finally, a metamorphic growth strategy for a novel light-emitting diode (LED) design is also discussed. This work utilized direct-bandgap AlxIn1-xP active layers with atomic ordering-based electron confinement to improve emission in the yellow and green spectral regions, where incumbent technologies are least effective, and demonstrated the feasibility of non-lattice-matched LED active materials for visible light emission.

  4. Design of segmented thermoelectric generator based on cost-effective and light-weight thermoelectric alloys

    International Nuclear Information System (INIS)

    Kim, Hee Seok; Kikuchi, Keiko; Itoh, Takashi; Iida, Tsutomu; Taya, Minoru

    2014-01-01

    Highlights: • Segmented thermoelectric (TE) module operating at 500 °C for combustion engine system. • Si based light-weight TE generator increases the specific power density [W/kg]. • Study of contact resistance at the bonding interfaces maximizing output power. • Accurate agreement of the theoretical predictions with experimental results. - Abstract: A segmented thermoelectric (TE) generator was designed with higher temperature segments composed of n-type Mg 2 Si and p-type higher manganese silicide (HMS) and lower temperature segments composed of n- and p-type Bi–Te based compounds. Since magnesium and silicon based TE alloys have low densities, they produce a TE module with a high specific power density that is suitable for airborne applications. A two-pair segmented π-shaped TE generator was assembled with low contact resistance materials across bonding interfaces. The peak specific power density of this generator was measured at 42.9 W/kg under a 498 °C temperature difference, which has a good agreement with analytical predictions

  5. Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Narducci, Dario, E-mail: dario.narducci@unimib.it [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Consorzio DeltaTi Research (Italy); Selezneva, Ekaterina [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Cerofolini, Gianfranco [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Consorzio DeltaTi Research (Italy); Frabboni, Stefano; Ottaviani, Giampiero [Department of Physics, University of Modena and Reggio Emilia, via Campi 213, 41100 Modena (Italy)

    2012-09-15

    Energy filtering has been widely considered as a suitable tool to increase the thermoelectric performances of several classes of materials. In its essence, energy filtering provides a way to increase the Seebeck coefficient by introducing a strongly energy-dependent scattering mechanism. Under certain conditions, however, potential barriers may lead to carrier localization, that may also affect the thermoelectric properties of a material. A model is proposed, actually showing that randomly distributed potential barriers (as those found, e.g., in polycrystalline films) may lead to the simultaneous occurrence of energy filtering and carrier localization. Localization is shown to cause a decrease of the actual carrier density that, along with the quantum tunneling of carriers, may result in an unexpected increase of the power factor with the doping level. The model is corroborated toward experimental data gathered by several authors on degenerate polycrystalline silicon and lead telluride. - Graphical abstract: In heavily doped semiconductors potential barriers may lead to both carrier energy filtering and localization. This may lead to an enhancement of the thermoelectric properties of the material, resulting in an unexpected increase of the power factor with the doping level. Highlights: Black-Right-Pointing-Pointer Potential barriers are shown to lead to carrier localization in thermoelectric materials. Black-Right-Pointing-Pointer Evidence is put forward of the formation of a mobility edge. Black-Right-Pointing-Pointer Energy filtering and localization may explain the enhancement of power factor in degenerate semiconductors.

  6. Direct evidence of strong local ferroelectric ordering in a thermoelectric semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Aggarwal, Leena; Sekhon, Jagmeet S.; Arora, Ashima; Sheet, Goutam, E-mail: goutam@iisermohali.ac.in [Department of Physical Sciences, Indian Institute of Science Education and Research Mohali (IISER M), Sector 81, S. A. S. Nagar, Manauli PO-140306 (India); Guin, Satya N.; Negi, Devendra S.; Datta, Ranjan; Biswas, Kanishka, E-mail: kanishka@jncasr.ac.in [New Chemistry Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur, Bangalore 560064 (India)

    2014-09-15

    It is thought that the proposed new family of multi-functional materials, namely, the ferroelectric thermoelectrics may exhibit enhanced functionalities due to the coupling of the thermoelectric parameters with ferroelectric polarization in solids. Therefore, the ferroelectric thermoelectrics are expected to be of immense technological and fundamental significance. As a first step towards this direction, it is most important to identify the existing high performance thermoelectric materials exhibiting ferroelectricity. Herein, through the direct measurement of local polarization switching, we show that the recently discovered thermoelectric semiconductor AgSbSe{sub 2} has local ferroelectric ordering. Using piezo-response force microscopy, we demonstrate the existence of nanometer scale ferroelectric domains that can be switched by external electric field. These observations are intriguing as AgSbSe{sub 2} crystalizes in cubic rock-salt structure with centro-symmetric space group (Fm–3m), and therefore, no ferroelectricity is expected. However, from high resolution transmission electron microscopy measurement, we found the evidence of local superstructure formation which, we believe, leads to local distortion of the centro-symmetric arrangement in AgSbSe{sub 2} and gives rise to the observed ferroelectricity. Stereochemically active 5S{sup 2} lone-pair of Sb may also give rise to local structural distortion thereby creating ferroelectricity in AgSbSe{sub 2}.

  7. POWER, METALLURGICAL AND CHEMICAL MECHANICAL ENGINEERING THERMOELECTRIC EVENTS IN LIGHT-EMITTING BIPOLAR SEMICONDUCTOR STRUCTURES

    Directory of Open Access Journals (Sweden)

    P. A. Magomedova

    2017-01-01

    Full Text Available Objective. The development of light-emitting bipolar semiconductor structures having a low level of parasitic heat release.Methods. A method for converting thermoelectric heat in bipolar semiconductor structures into optical radiation to divert the excess energy into the environment was developed. At the same time, the cooling effect on thermoelectric junctions remains. Instead of an inertial process of conductive or convective heat transfer, practically instantaneous heat removal from electronic components to the environment takes place.Results. As a result, light-emitting bipolar semiconductor structures will allow more powerful devices with greater speed and degree of integration to be created. It is possible to produce transparent LED matrices with a two-way arrangement of transparent solar cells and mirror metal electrodes along the perimeter. When current is applied, the LED matrix on one of the transitions will absorb thermal energy; on other electrodes, it will emit radiation that is completely recovered into electricity by means of transparent solar cells following repeated reflection between the mirror electrodes. The low efficiency of solar cells will be completely compensated for with the multiple passages of photons through these batteries.Conclusion. Light-emitting bipolar semiconductor structures will not only improve the reliability of electronic components in a wide range of performance characteristics, but also improve energy efficiency through the use of optical radiation recovery. Semiconductor thermoelectric devices using optical phenomena in conjunction with the Peltier effect allow a wide range of energy-efficient components of radio electronic equipment to be realised, both for discrete electronics and for microsystem techniques. Systems for obtaining ultra-low temperatures in order to achieve superconductivity are of particular value. 

  8. Thermoelectric Properties of the XCoSb (X: Ti,Zr,Hf) Half-Heusler Alloys

    KAUST Repository

    Gandi, Appala

    2017-09-18

    We investigate the thermoelectric properties of the half-Heusler alloys XCoSb (X: Ti,Zr,Hf) by solving Boltzmann transport equations and discuss them in terms of the electronic band structure. The rigid band approximation is employed to address the effects of doping. While many half-Heuser alloys show excellent thermoelectric performance, the materials under study are special by supporting both n- and p-doping. We identify the reasons for this balanced thermoelectric transport and explain why experimentally p-doping is superior to n-doping. We also determine the spectrum of phonon mean free paths to guide grain refinement methods to enhance the thermoelectric figure of merit.

  9. Local order dependent impurity levels in alloy semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da; Ecole Normale Superieure, 75 - Paris

    1981-01-01

    We develop a one band/may sites model for an isoelectronic impurity in a semiconductor alloy. The cluster-Bethe-lattice approximation is used to study the dependence of the impurity energy level upon the short range order (SRO) of the alloy. The Kikuchi parametrization is used to describe the latter. We take into account diagonal disorder only, with possible off-diagonal relaxation around the impurity site. All the inequivalent clusters of the impurity site and its first nearest neighbours are considered, thus including the important short range alloy potential fluctuations. Results are presented for the local density of impurity states, for different degrees of SRO in the alloy. (Author) [pt

  10. Universal Curve of Optimum Thermoelectric Figures of Merit for Bulk and Low-Dimensional Semiconductors

    Science.gov (United States)

    Hung, Nguyen T.; Nugraha, Ahmad R. T.; Saito, Riichiro

    2018-02-01

    This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus. Analytical formulas for thermoelectric figures of merit and power factors are derived based on the one-band model. We find that there is a direct relationship between the optimum figures of merit and the optimum power factors of semiconductors despite of the fact that the two quantities are generally given by different values of chemical potentials. By introducing a dimensionless parameter consisting of the optimum power factor and lattice thermal conductivity (without electronic thermal conductivity), it is possible to unify optimum figures of merit of both bulk and low-dimensional semiconductors into a single universal curve that covers many materials with different dimensionalities.

  11. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    KAUST Repository

    Kiefer, David; Yu, Liyang; Fransson, Erik; Gó mez, André s; Primetzhofer, Daniel; Amassian, Aram; Campoy-Quiles, Mariano; Mü ller, Christian

    2016-01-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  12. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    KAUST Repository

    Kiefer, David

    2016-09-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  13. Understanding the resistivity and absolute thermoelectric power of disordered metals and alloys

    International Nuclear Information System (INIS)

    Gasser, Jean-Georges

    2008-01-01

    We recall definitions of the electronic transport properties, direct coefficients like electrical and thermal transport conductivities and crossed thermoelectric coefficients like the Seebeck, Peltier and Thomson coefficients. We discuss the links between the different electronic transport coefficients and the experimental problems in measuring these properties in liquid metals. The electronic transport properties are interpreted in terms of the scattering of electrons by 'pseudo-atoms'. The absolute thermoelectric power (ATP), thermopower or Seebeck coefficient is known as the derivative of the electrical resistivity versus energy. The key is to understand the concept of resistivity versus energy. We show that the resistivity follows approximately a 1/E curve. The structure factor modulates this curve and, for a Fermi energy corresponding to noble and divalent metals, induces a positive thermopower when the free electron theory predicts a negative one. A second modulation is introduced by the pseudopotential squared form factor or equivalently by the squared t matrix of the scattering potential. This term sometimes introduces an anti-resonance (divalent metals) which lowers the resistivity, and sometimes a resonance having an important effect on the transition metals. Following the position of the Fermi energy, the thermopower can be positive or negative. For heavy semi-metals, the density of states splits into an s and a p band, themselves different from a free electron E 0.5 curve. The electrons available to be scattered enter the Ziman formula. Thus if the density of states is not a free electron one, a third modulation of the ρ ≅ 1/E curve is needed, which also can change the sign of the thermopower. For alloys, different contributions weighted by the concentrations are needed to explain the concentration dependent resistivity or thermopower. The formalism is the same for amorphous metals. It is possible that this mechanism can be extended to high

  14. Electron transport in erbium arsenide:indium gallium(aluminum)arsenide metal/semiconductor nanocomposites for thermoelectric power generation

    Science.gov (United States)

    Bahk, Je-Hyeong

    Electron transport in thin film ErAs:InGa(Al)As metal/semiconductor nanocomposite materials grown by molecular beam epitaxy is investigated experimentally and theoretically for efficient thermoelectric power generation. Thermoelectric properties such as the Seebeck coefficient, the electrical conductivity, and the thermal conductivity are measured for the various compositions of the material up to 840 K. A special sample preparation method is proposed to protect the thin films from damage and/or decomposition, and prevent the parasitic substrate conduction effect during the high temperature measurements. The sample preparation method includes surface passivation, high temperature metallization with a diffusion barrier, and the covalent oxide bonding technique for substrate removal. The experimental results for the nanocomposite materials are analyzed using the Boltzmann transport equation under the relaxation time approximation. The scattering characteristics of free electrons in the InGa(Al)As is defined by four major scattering mechanisms such as the polar optical phonon scattering, the ionized impurity scattering, the alloy scattering, and the acoustic phonon deformation potential scattering. Combining these scattering mechanisms, the electron transport model successfully fits the temperature-dependent thermoelectric properties of Si-doped InGaAlAs materials, and predicts the figure of merits at various doping levels in various Al compositions. The nanoparticle-electron interaction is modeled as a momentum scattering for free electrons caused by the electrostatic potential perturbation around nanoparticles and the band offset at the interface. The ErAs nanoparticles are assumed to be semi-metals that can donate electrons to the matrix, and positively charged after the charge transfer to build up the screened coulomb potential outside them. The nanoparticle scattering rate is calculated for this potential profile using the partial wave method, and used to analyze

  15. Thermoelectric Properties of the XCoSb (X: Ti,Zr,Hf) Half-Heusler Alloys

    KAUST Repository

    Gandi, Appala; Schwingenschlö gl, Udo

    2017-01-01

    We investigate the thermoelectric properties of the half-Heusler alloys XCoSb (X: Ti,Zr,Hf) by solving Boltzmann transport equations and discuss them in terms of the electronic band structure. The rigid band approximation is employed to address

  16. Thermoelectric property of fine-grained CoSb3 skutterudite compound fabricated by mechanical alloying and spark plasma sintering

    International Nuclear Information System (INIS)

    Liu Weishu; Zhang Boping; Li Jingfeng; Zhao Lidong

    2007-01-01

    Skutterudite CoSb 3 polycrystalline materials were prepared using a combined process of mechanical alloying (MA) and spark plasma sintering (SPS). The influence of SPS temperature on the thermoelectric properties was focused in this work with a special emphasis on the analysis of the size effects of grains. The average grain sizes decreased from 300 to 50 nm with decreasing SPS temperatures from 600 to 300 deg. C. The electrical resistivities of samples spark plasma sintered at 300-600 deg. C all decreased with increasing temperature, indicating a classic intrinsic conduction behaviour of semiconductors. The samples spark plasma sintered at 300-500 deg. C showed a positive Seebeck coefficient while the sample spark plasma sintered at 600 deg. C showed a negative Seebeck coefficient. The room-temperature thermal conductivities were reduced from 4.30 to 2.92 W m -1 K -1 as the grain sizes were decreased from 300 to 100 nm corresponding to SPS at 600 and 400 deg. C, respectively. The present work indicates that MA and SPS is a good combination for fabricating fine-grained CoSb 3 thermoelectric materials

  17. Electron dominated thermoelectric response in MNiSn (M: Ti, Zr, Hf) half-Heusler alloys

    KAUST Repository

    Gandi, Appala

    2016-05-09

    We solve the transport equations of the electrons and phonons to understand the thermoelectric behaviour of the technologically important half-Heusler alloys MNiSn (M: Ti, Zr, Hf). Doping is simulated within the rigid band approximation. We clarify the origin of the electron dominated thermoelectric response and determine the carrier concentrations with maximal figures of merit. The phonon mean free path is studied to calculate the grain size below which grain refinement methods can enforce ballistic heat conduction to enhance the figure of merit. © The Owner Societies 2016.

  18. Electron dominated thermoelectric response in MNiSn (M: Ti, Zr, Hf) half-Heusler alloys

    KAUST Repository

    Gandi, Appala; Schwingenschlö gl, Udo

    2016-01-01

    We solve the transport equations of the electrons and phonons to understand the thermoelectric behaviour of the technologically important half-Heusler alloys MNiSn (M: Ti, Zr, Hf). Doping is simulated within the rigid band approximation. We clarify the origin of the electron dominated thermoelectric response and determine the carrier concentrations with maximal figures of merit. The phonon mean free path is studied to calculate the grain size below which grain refinement methods can enforce ballistic heat conduction to enhance the figure of merit. © The Owner Societies 2016.

  19. Phase separation and antisite defects in the thermoelectric TiNiSn half-Heusler alloys

    International Nuclear Information System (INIS)

    Kirievsky, K.; Gelbstein, Y.; Fuks, D.

    2013-01-01

    The half-Heusler TiNiSn alloys have recently gained an attention as promising candidates for thermoelectric applications. Improvement of these alloys for such applications can be obtained by both electronic and compositional optimizations. The latter can result in a miscibility gap, allowing a phase separation in the nano-scale and consequently a thermal conductivity reduction. Combination of ab initio calculations and statistical thermodynamics was applied for studying the relative stability of a number of superstructures in TiNiSn based alloys. The quasi-binary phase diagram beyond T=0 K for TiNiSn–TiNi 2 Sn solid solutions was calculated using energy parameters extracted from the total energy calculations for ordered structures in the Ni sublattice. We demonstrated that a decomposition of the off-stoichiometric Ni-rich half-Heusler alloy into the stoichiometric TiNiSn phase and into Ni deficient Heusler TiNi 2 Sn phase occurs at elevated temperatures—an effect which recently had been observed experimentally. Furthermore, favorable energetic conditions for antisite defects formation were deduced, based on calculations of the energy of formation, an effect which was explained as a cooperative process of partial disordering on the Ni sublattice. The influence of these two effects on improvement of the thermoelectric performance of TiNiSn based half Heusler compounds is discussed. - Graphical abstract: Phase separation and antisite defects in the thermoelectric TiNiSn alloy, are covered as methods for nanostructuring and thereby enhancement of the thermoelectric potential. - Highlights: • Ab initio calculations/statistical thermodynamics was applied for studying the TiNiSn system. • The phase diagram for TiNiSn–TiNi 2 Sn solid solutions was calculated. • Decomposition of the Ni-rich HH into TiNiSn and Ni deficient TiNi 2 Sn phases was observed. • Favorable energetic conditions for antisite defects formation were deduced

  20. Zinc Alloys for the Fabrication of Semiconductor Devices

    Science.gov (United States)

    Ryu, Yungryel; Lee, Tae S.

    2009-01-01

    ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and

  1. Study of thermoelectric power of Co-B liquid quenched amorphous alloys at relatively high temperature

    International Nuclear Information System (INIS)

    Naqvi, S.M.N.R.; Rizvi, S.D.H.; Raza, S.M.; Rizvi, S.; Hussain, A.; Rehman, F.

    1999-01-01

    Measurements of thermoelectric power TEP were carried out for the samples of Co-1 alloy with appropriate compositions of constitutions in the temperature range, 350K< T<760K. The analysis of data shows an inverse Gaussian profile. Ziman theoretical model was used to fit the resistivity data which shows an agreement. Dynamic recovery processes as well as formation of vacancies, interstials, intersection of basal dislocations and indeed pyramidal interlocking of dislocations for seeding scattering centers are responsible for residual TEP at relatively high temperatures Co-B LQA alloys also undergo into other structural changes at such temperatures. (author)

  2. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Wang, Wenzhong (Inventor); Dresselhaus, Mildred (Inventor)

    2009-01-01

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  3. Influence of germanium nano-inclusions on the thermoelectric power factor of bulk bismuth telluride alloy

    International Nuclear Information System (INIS)

    Satyala, Nikhil; Zamanipour, Zahra; Norouzzadeh, Payam; Krasinski, Jerzy S.; Vashaee, Daryoosh; Tahmasbi Rad, Armin; Tayebi, Lobat

    2014-01-01

    Nanocomposite thermoelectric compound of bismuth telluride (Bi 2 Te 3 ) with 5 at. % germanium nano-inclusions was prepared via mechanically alloying and sintering techniques. The influence of Ge nano-inclusions and long duration annealing on the thermoelectric properties of nanostructured Bi 2 Te 3 were investigated. It was found that annealing has significant effect on the carrier concentration, Seebeck coefficient, and the power factor of the thermoelectric compound. The systematic heat treatment also reduced the density of donor type defects thereby decreasing the electron concentration. While the as-pressed nanocomposite materials showed n-type properties, it was observed that with the increase of annealing time, the nanocomposite gradually transformed to an abundantly hole-dominated (p-type) sample. The long duration annealing (∼500 h) resulted in a significantly enhanced electrical conductivity pertaining to the augmentation in the density and the structural properties of the sample. Therefore, a simultaneous enhancement in both electrical and Seebeck coefficient characteristics resulted in a remarkable increase in the thermoelectric power factor.

  4. Thermoelectric power measurements in liquid quenched amorphous alloys for FeZr and (FeCo)B

    International Nuclear Information System (INIS)

    Raza, S.M.; Naqvi, S.M.M.R.; Rizvi, S.; Hussain, A.; Rahman, F.

    1999-01-01

    Thermoelectric power (TEP) measurements have been carried out on six samples of LQA alloys from two different series, namely FeZr and Fe(Co)B, at relatively low temperatures. Thermoelectric power shows an overall Gaussian trend. The scattering centers are the major contributors to the residual TEP. Ziman theoretical model was used to estimate TEP. It was found that Ziman theory fails to account for quantitative TEP measurements at relatively low temperatures (77K< T<300K). (author)

  5. Crystallization and Thermoelectric Transport in Semiconductor Micro- and Nanostructures Under Extreme Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Gokirmak, Ali [Univ. of Connecticut, Storrs, CT (United States); Silva, Helena [Univ. of Connecticut, Storrs, CT (United States)

    2017-08-30

    This project focused on thermoelectric transport in semiconductor micro and nanostructures where moderate and typical operating voltages and currents lead to extreme thermal gradients and current densities. Models that describe behavior of semiconducting materials typically assume an equilibrium condition or slight deviations from it. In these cases the generation-recombination processes are assumed to have reached a local equilibrium for a given temperature. Hence, free carrier concentrations and their mobilities, band-gap, thermal conductivity, thermoelectric properties, mobility of atoms and mechanical properties of the material, can be described as a function of temperature. In the case of PN junctions under electrical bias, carrier concentrations can change up to ~ 1020 cm-3 and a drift-diffusion approximation is typically used to obtain the carrier concentrations while assuming that the material properties do not change. In non-equilibrium conditions, the assumption that the material properties remain the same may not be valid. While the increased conduction-band electron concentration may not have a drastic effect on the material, large hole concentration is expected to soften the material as ‘a hole’ comes into existence as a broken bond in the lattice. As the hole density approaches 1022 cm-3, the number of bonds holding the lattice together is significantly reduced, making it easier to break additional bonds, reduce band-gap and inhibit phonon transport. As these holes move away from where they were generated, local properties are expected to deviate significantly from the equilibrium case. Hence, temperature alone is not sufficient to describe the behavior of the material. The behavior of the solid material close to a molten region (liquid-solid interfaces) is also expected to deviate from the equilibrium case as a function of hole injection rate, which can be drastically increased or decreased in the presence of an electric field. In the past years

  6. Compact Models for Defect Diffusivity in Semiconductor Alloys.

    Energy Technology Data Exchange (ETDEWEB)

    Wright, Alan F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Nanostructure Physics Department; Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Nanostructure Physics Department; Lee, Stephen R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Materials Sciences Department; Foiles, Stephen M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Computational Materials and Data Science Department

    2017-09-01

    Predicting transient effects caused by short - pulse neutron irradiation of electronic devices is an important part of Sandia's mission. For example , predicting the diffusion of radiation - induced point defects is needed with in Sandia's Qualification Alternative to the Sandia Pulsed Reactor (QASPR) pro gram since defect diffusion mediates transient gain recovery in QASPR electronic devices. Recently, the semiconductors used to fabricate radiation - hard electronic devices have begun to shift from silicon to III - V compounds such as GaAs, InAs , GaP and InP . An advantage of this shift is that it allows engineers to optimize the radiation hardness of electronic devices by using alloy s such as InGaAs and InGaP . However, the computer codes currently being used to simulate transient radiation effects in QASP R devices will need to be modified since they presume that defect properties (charge states, energy levels, and diffusivities) in these alloys do not change with time. This is not realistic since the energy and properties of a defect depend on the types of atoms near it and , therefore, on its location in the alloy. In particular, radiation - induced defects are created at nearly random locations in an alloy and the distribution of their local environments - and thus their energies and properties - evolves with time as the defects diffuse through the alloy . To incorporate these consequential effects into computer codes used to simulate transient radiation effects, we have developed procedures to accurately compute the time dependence of defect energies and properties and then formulate them within compact models that can be employed in these computer codes. In this document, we demonstrate these procedures for the case of the highly mobile P interstitial (I P ) in an InGaP alloy. Further dissemination only as authorized to U.S. Government agencies and their contractors; other requests shall be approved by the originating facility or higher DOE

  7. Band anticrossing effects in highly mismatched semiconductor alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Junqiao [Univ. of California, Berkeley, CA (United States)

    2002-01-01

    The first five chapters of this thesis focus on studies of band anticrossing (BAC) effects in highly electronegativity- mismatched semiconductor alloys. The concept of bandgap bowing has been used to describe the deviation of the alloy bandgap from a linear interpolation. Bowing parameters as large as 2.5 eV (for ZnSTe) and close to zero (for AlGaAs and ZnSSe) have been observed experimentally. Recent advances in thin film deposition techniques have allowed the growth of semiconductor alloys composed of significantly different constituents with ever- improving crystalline quality (e.g., GaAs1-xNx and GaP1-xNx with x ~< 0.05). These alloys exhibit many novel and interesting properties including, in particular, a giant bandgap bowing (bowing parameters > 14 eV). A band anticrossing model has been developed to explain these properties. The model shows that the predominant bowing mechanism in these systems is driven by the anticrossing interaction between the localized level associated with the minority component and the band states of the host. In this thesis I discuss my studies of the BAC effects in these highly mismatched semiconductors. It will be shown that the results of the physically intuitive BAC model can be derived from the Hamiltonian of the many-impurity Anderson model. The band restructuring caused by the BAC interaction is responsible for a series of experimental observations such as a large bandgap reduction, an enhancement of the electron effective mass, and a decrease in the pressure coefficient of the fundamental gap energy. Results of further experimental investigations of the optical properties of quantum wells based on these materials will be also presented. It will be shown that the BAC interaction occurs not only between localized states and conduction band states at the Brillouin zone center, but also exists over all of k-space. Finally, taking ZnSTe and ZnSeTe as examples, I show that BAC also

  8. Phonon structures of GaN-based random semiconductor alloys

    Science.gov (United States)

    Zhou, Mei; Chen, Xiaobin; Li, Gang; Zheng, Fawei; Zhang, Ping

    2017-12-01

    Accurate modeling of thermal properties is strikingly important for developing next-generation electronics with high performance. Many thermal properties are closely related to phonon dispersions, such as sound velocity. However, random substituted semiconductor alloys AxB1-x usually lack translational symmetry, and simulation with periodic boundary conditions often requires large supercells, which makes phonon dispersion highly folded and hardly comparable with experimental results. Here, we adopt a large supercell with randomly distributed A and B atoms to investigate substitution effect on the phonon dispersions of semiconductor alloys systematically by using phonon unfolding method [F. Zheng, P. Zhang, Comput. Mater. Sci. 125, 218 (2016)]. The results reveal the extent to which phonon band characteristics in (In,Ga)N and Ga(N,P) are preserved or lost at different compositions and q points. Generally, most characteristics of phonon dispersions can be preserved with indium substitution of gallium in GaN, while substitution of nitrogen with phosphorus strongly perturbs the phonon dispersion of GaN, showing a rapid disintegration of the Bloch characteristics of optical modes and introducing localized impurity modes. In addition, the sound velocities of both (In,Ga)N and Ga(N,P) display a nearly linear behavior as a function of substitution compositions. Supplementary material in the form of one pdf file available from the Journal web page at http://https://doi.org/10.1140/epjb/e2017-80481-0.

  9. Magneto-electronic, thermal, and thermoelectric properties of some Co-based quaternary alloys

    Science.gov (United States)

    Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

    2018-01-01

    In this study, quaternary Heusler alloys CoFeCrZ (Z = Si, As, Sb) were investigated based on the modified Becke-Johnson exchange potential. The electronic structures demonstrated that CoFeCrZ (Z = Si, As, Sb) alloys are completely spin polarized with indirect bandgap and has an integer magnetic moment according to the Slater-Pauling rule. Pugh's and Poisson's ratios showed that these materials are highly ductile with high melting temperatures. The thermal properties comprising the thermal expansion coefficient, heat capacity, and Grüneisen parameter were evaluated at various pressures from 0 to 20 GPa. The Grüneisen parameter values indicated the strong anharmonicity of the lattice vibrations that predominated in these compounds. We also studied the dependency of the thermoelectric transport properties on the temperature, i.e., the thermal conductivity and Seebeck coefficient. These alloys exhibited low lattice thermal conductivity and good Seebeck coefficients at room temperature. The half-metallic structures of these compounds with large band gaps and adequate Seebeck coefficients mean that they are suitable for use in spintronic and thermoelectric device applications.

  10. High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys

    OpenAIRE

    Chen, Long; Liu, Yamei; He, Jian; Tritt, Terry M.; Poon, S. Joseph

    2017-01-01

    Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in e...

  11. Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors

    International Nuclear Information System (INIS)

    Blumers, Mathias

    2012-01-01

    The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S 2 .σ/k, where S is the Seebeck-coefficient, σ is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb 1-x Sr x Te and Bi 2 (Se x Te 1-x ) 3 , respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, σ and κ parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,σ,κ) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

  12. The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

    Science.gov (United States)

    Kucukgok, Bahadir; Wu, Xuewang; Wang, Xiaojia; Liu, Zhiqiang; Ferguson, Ian T.; Lu, Na

    2016-02-01

    The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x = 0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K-1 and 21.84 × 10-4 Wm-1K-1 were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature.

  13. Thermoelectric study of Ag doped SnSe-Sb2Se3 based alloy

    Science.gov (United States)

    Das, Anish; Talukdar, M.; Kumar, Aparabal; Sarkar, Kalyan Jyoti; Dhama, P.; Banerji, P.

    2018-05-01

    In this article we have synthesized p-type alloy of SnSe and Sb2Se3 (10 atomic %) to study the thermoelectric transport properties. The alloy was prepared by melt grown technique followed by spark plasma sintering and latter doped with 2 atomic % Ag to compensate the carrier density in order to achieve higher electrical conductivity (σ). Out of these, the doped sample resulted in the maximum figure of merit, ZT˜0.7 at 773 K due to the existence of the secondary phase AgSbSe2 and reduced lattice thermal conductivity (0.61 W m-1 K-1 at 300 K). The fitted lattice thermal conductivity shows that point defect and Umklapp scattering are the primary process of phonon scattering for all the samples whereas the fitted mobility data confirms acoustic phonon scattering along with point defect and grain boundary scattering to be the main carrier scattering mechanism. More over room temperature carrier density and electrical conductivity are found to increase for the doped sample which further corroborate (90%)SnSe-(10%)Sb2Se3:2%Ag to be a potential candidate for highly efficient thermoelectric materials.

  14. Bond-Length Distortions in Strained Semiconductor Alloys

    International Nuclear Information System (INIS)

    Woicik, J.C.; Pellegrino, J.G.; Steiner, B.; Miyano, K.E.; Bompadre, S.G.; Sorensen, L.B.; Lee, T.; Khalid, S.

    1997-01-01

    Extended x-ray absorption fine structure measurements performed at In-K edge have resolved the outstanding issue of bond-length strain in semiconductor-alloy heterostructures. We determine the In-As bond length to be 2.581±0.004 Angstrom in a buried, 213 Angstrom thick Ga 0.78 In 0.22 As layer grown coherently on GaAs(001). This bond length corresponds to a strain-induced contraction of 0.015±0.004 Angstrom relative to the In-As bond length in bulk Ga 1-x In x As of the same composition; it is consistent with a simple model which assumes a uniform bond-length distortion in the epilayer despite the inequivalent In-As and Ga-As bond lengths. copyright 1997 The American Physical Society

  15. Orbital frustration induced unusual ordering in semiconductor alloys

    Science.gov (United States)

    Liu, Kai; Yin, Wanjian; Chen, Shiyou; Gong, Xingao; Wei, Suhuai; Xiang, Hongjun

    It is well known that ternary zinc-blende semiconductors are always more stable in the chalcopyrite (CH) structure than the Cu-Au (CA) structure because CH structure has large Coulomb interaction and reduced strain energy. Surprisingly, an experimental study showed that ZnFeSe2 alloy takes the CA order as the ground state structure, which is consistent with our density function theory (DFT) calculations showing that the CA order has lower energy than the CH order for ZnFeSe2. We reveal that the orbital degree of freedom of high-spin Fe2+ ion (d6) in the tetrahedral crystal field plays a key role in stabilizing the CA order. First, the spin-minority d electron of the Fe2+ ion tends to occupy the dx2-y 2 -like orbital instead of the d3z2 -r2 -like orbital because of its large negative Coulomb energy. Second, for a nearest-neighboring Fe2+ pair, two spin-minority d electrons with occupied dx2-y 2 -like orbitals in the plane containing the Fe-Fe bond has lower electronic kinetic energy. Both conditions can be satisfied in the CA ordered ZnFeSe2 alloy, while there is an orbital frustration in the CH structure. Our results suggest that orbital degree of freedom provides a new way to manipulate the structure and properties of alloys. Work at Fudan was supported by NSFC (11374056), the Special Funds for Major State Basic Research (2012CB921400, 2015CB921700), Program for Professor of Special Appointment (Eastern Scholar), and Fok Ying Tung Education Foundation.

  16. High thermoelectric figure of merit by resonant dopant in half-Heusler alloys

    Science.gov (United States)

    Chen, Long; Liu, Yamei; He, Jian; Tritt, Terry M.; Poon, S. Joseph

    2017-06-01

    Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in enhancing the ZT of n-type half-Heusler alloys based on Hf0.6Zr0.4NiSn0.995Sb0.005. The V doping was found to increase the Seebeck coefficient in the temperature range 300-1000 K, consistent with a resonant doping scheme. In contrast, Nb and Ta act as normal n-type dopants, as evident by the systematic decrease in electrical resistivity and Seebeck coefficient. The combination of enhanced Seebeck coefficient due to the presence of V resonant states and the reduced thermal conductivity has led to a state-of-the-art ZT of 1.3 near 850 K in n-type (Hf0.6Zr0.4)0.99V0.01NiSn0.995Sb0.005 alloys.

  17. Temperature-induced assembly of semiconductor nanocrystals into fractal architectures and thermoelectric power properties in Au/Ge bilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Li Quanbao; Wang Jian; Jiao Zheng [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Wu Minghong, E-mail: mhwu@staff.shu.edu.cn [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Shek, Chan-Hung; Lawrence Wu, C.M.; Lai, Joseph K.L. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Chen Zhiwen, E-mail: cnzwchen@yahoo.com.cn [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)

    2011-08-15

    Highlights: > Ge fractal architectures were achieved by temperature-induced assembly. > The appearance of fractal architectures influences the thermoelectric power. > But it has little effect on the resistivity. > The values of the superlocalization exponent were within 1.22 {<=} {xi} {<=} 1.29. > It was higher than expected for two-dimension fractal system. - Abstract: Fractal architectures of semiconductor nanocrystals were successfully achieved by temperature-induced assembly of semiconductor nanocrystals in gold/germanium (Au/Ge) bilayer films. New assessment strategies of fractal architectures are of fundamental importance in the development of micro/nano-devices. Temperature-dependent properties including resistivity and thermoelectric power (TEP) of Au/Ge bilayer films with self-similar fractal patterns were investigated in detail. Experimental results indicated that the microstructure of Au film plays an important role in the characteristics of Au/Ge bilayer films after annealing and the crystallization processes of amorphous Ge accompany by fractal formation of Ge nanocrystals via temperature-induced assembly. The appearance of fractal architectures has significantly influence on the TEP but little effect on the resistivity of the annealed bilayer film. By analysis of the data, we found that the values of superlocalization exponent are within 1.22 {<=} {xi} {<=} 1.29, which are higher than expected for two-dimension fractal systems. The results provided possible evidence for the superlocalization on fractal architectures in Au/Ge bilayer films. The TEP measurements are considered a more effective method than the conductivity for investigating superlocalization in a percolating system.

  18. Importance of non-parabolic band effects in the thermoelectric properties of semiconductors

    Science.gov (United States)

    Chen, Xin; Parker, David; Singh, David J.

    2013-01-01

    We present an analysis of the thermoelectric properties of of n-type GeTe and SnTe in relation to the lead chalcogenides PbTe and PbSe. We find that the singly degenerate conduction bands of semiconducting GeTe and SnTe are highly non-ellipsoidal, even very close to the band edges. This leads to isoenergy surfaces with a strongly corrugated shape that is clearly evident at carrier concentrations well below 0.005 e per formula unit (7–9 × 1019 cm−3 depending on material). Analysis within Boltzmann theory suggests that this corrugation may be favorable for the thermoelectric transport. Our calculations also indicate that values of the power factor for these two materials may well exceed those of PbTe and PbSe. As a result these materials may exhibit n-type performance exceeding that of the lead chalcogenides. PMID:24196778

  19. The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

    Directory of Open Access Journals (Sweden)

    Bahadir Kucukgok

    2016-02-01

    Full Text Available The III-Nitrides are promising candidate for high efficiency thermoelectric (TE materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x =  0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K−1 and 21.84 × 10−4 Wm−1K−1 were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature.

  20. The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

    Energy Technology Data Exchange (ETDEWEB)

    Kucukgok, Bahadir; Lu, Na, E-mail: Luna@purdue.edu [Lyles School of Civil Engineering, Purdue University, West Lafayette, IN 47907 (United States); Wu, Xuewang; Wang, Xiaojia [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Liu, Zhiqiang [Institute of Semiconductors, Chinese Academy of Science, Beijing (China); Ferguson, Ian T. [College of Engineering and Computing, Missouri University of Science and Technology, Rolla, MO 65409 (United States)

    2016-02-15

    The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown In{sub x}Ga{sub 1-x}N were investigated for x =  0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K{sup −1} and 21.84 × 10{sup −4} Wm{sup −1}K{sup −1} were observed, respectively for In{sub 0.07}Ga{sub 0.93}N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In{sub 0.20}Ga{sub 0.80}N alloy at room temperature.

  1. Possible High Thermoelectric Power in Semiconducting Carbon Nanotubes ˜A Case Study of Doped One-Dimensional Semiconductors˜

    Science.gov (United States)

    Yamamoto, Takahiro; Fukuyama, Hidetoshi

    2018-02-01

    We have theoretically investigated the thermoelectric properties of impurity-doped one-dimensional semiconductors, focusing on nitrogen-substituted (N-substituted) carbon nanotubes (CNTs), using the Kubo formula combined with a self-consistent t-matrix approximation. N-substituted CNTs exhibit extremely high thermoelectric power factor (PF) values originating from a characteristic of one-dimensional materials where decrease in the carrier density increase both the electrical conductivity and the Seebeck coefficient in the low-N regime. The chemical potential dependence of the PF values of semiconducting CNTs has also been studied as a field-effect transistor and it turns out that the PF values show a noticeable maximum in the vicinity of the band edges. This result demonstrates that "band-edge engineering" will be crucial for solid development of high-performance thermoelectric materials.

  2. Microstructure and mechanical properties of thermoelectric nanostructured n-type silicon-germanium alloys synthesized employing spark plasma sintering

    Energy Technology Data Exchange (ETDEWEB)

    Bathula, Sivaiah [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Department of Applied Physics, Delhi Technological University, Delhi (India); Gahtori, Bhasker; Tripathy, S. K.; Tyagi, Kriti; Srivastava, A. K.; Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Jayasimhadri, M. [Department of Applied Physics, Delhi Technological University, Delhi (India)

    2014-08-11

    Owing to their high thermoelectric (TE) figure-of-merit, nanostructured Si{sub 80}Ge{sub 20} alloys are evolving as a potential replacement for their bulk counterparts in designing efficient radio-isotope TE generators. However, as the mechanical properties of these alloys are equally important in order to avoid in-service catastrophic failure of their TE modules, we report the strength, hardness, fracture toughness, and thermal shock resistance of nanostructured n-type Si{sub 80}Ge{sub 20} alloys synthesized employing spark plasma sintering of mechanically alloyed nanopowders of its constituent elements. These mechanical properties show a significant enhancement, which has been correlated with the microstructural features at nano-scale, delineated by transmission electron microscopy.

  3. Thermoelectric conversion efficiency in IV-VI semiconductors with reduced thermal conductivity

    Directory of Open Access Journals (Sweden)

    Akihiro Ishida

    2015-10-01

    Full Text Available Mid-temperature thermoelectric conversion efficiencies of the IV-VI materials were calculated under the Boltzmann transport theory of carriers, taking the Seebeck, Peltier, and Thomson effects into account. The conversion efficiency was discussed with respect to the lattice thermal conductivity, keeping other parameters such as Seebeck coefficient and electrical conductivity to the same values. If room temperature lattice thermal conductivity is decreased up to 0.5W/mK, the conversion efficiency of a PbS based material becomes as high as 15% with the temperature difference of 500K between 800K and 300K.

  4. Band structure and thermoelectric properties of half-Heusler semiconductors from many-body perturbation theory

    Science.gov (United States)

    Zahedifar, Maedeh; Kratzer, Peter

    2018-01-01

    Various ab initio approaches to the band structure of A NiSn and A CoSb half-Heusler compounds (A = Ti, Zr, Hf) are compared and their consequences for the prediction of thermoelectric properties are explored. Density functional theory with the generalized-gradient approximation (GGA), as well as the hybrid density functional HSE06 and ab initio many-body perturbation theory in the form of the G W0 approach, are employed. The G W0 calculations confirm the trend of a smaller band gap (0.75 to 1.05 eV) in A NiSn compared to the A CoSb compounds (1.13 to 1.44 eV) already expected from the GGA calculations. While in A NiSn materials the G W0 band gap is 20% to 50% larger than in HSE06, the fundamental gap of A CoSb materials is smaller in G W0 compared to HSE06. This is because G W0 , similar to PBE, locates the valence band maximum at the L point of the Brillouin zone, whereas it is at the Γ point in the HSE06 calculations. The differences are attributed to the observation that the relative positions of the d levels of the transition metal atoms vary among the different methods. Using the calculated band structures and scattering rates taking into account the band effective masses at the extrema, the Seebeck coefficients, thermoelectric power factors, and figures of merit Z T are predicted for all six half-Heusler compounds. Comparable performance is predicted for the n -type A NiSn materials, whereas clear differences are found for the p -type A CoSb materials. Using the most reliable G W0 electronic structure, ZrCoSb is predicted to be the most efficient material with a power factor of up to 0.07 W/(K2 m) at a temperature of 600 K. We find strong variations among the different ab initio methods not only in the prediction of the maximum power factor and Z T value of a given material, but also in comparing different materials to each other, in particular in the p -type thermoelectric materials. Thus we conclude that the most elaborate, but also most costly G W0

  5. Ordering-induced changes in the optical spectra of semiconductor alloys

    International Nuclear Information System (INIS)

    Bernard, J.E.; Wei, S.; Wood, D.M.; Zunger, A.

    1988-01-01

    It is shown how the recently predicted and subsequently observed spontaneous long-range ordering of pseudobinary A/sub 0.5/B/sub 0.5/C isovalent semiconductor alloys into the (AC) 1 (BC) 1 superlattice structure (a CuAuI-type crystal) gives rise to characteristic changes in the optical and photoemission spectra. We predict new direct transitions and substantial splittings of transitions absent in the disordered alloy

  6. Studies of bulk materials for thermoelectric cooling

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, J W; Nolas, G S; Volckmann, E H

    1997-07-01

    The authors discuss ongoing work in three areas of thermoelectric materials research: (1) broad band semiconductors featuring anion networks, (2) filled skutterudites, and (3) polycrystalline Bi-Sb alloys. Key results include: a preliminary evaluation of a previously untested ternary semiconductor, KSnSb; the first reported data in which Sn is used as a charge compensator in filled antimonide skutterudites; the finding that Sn doping does not effect polycrystalline Bi{sub 1{minus}x}Sb{sub x} as it does single crystal samples.

  7. Electric resistivity and thermoelectricity of Ni-Nb-Zr and Ni-Nb-Zr-H glassy alloys

    Science.gov (United States)

    Fukuhara, Mikio; Inoue, Akihisa

    2010-09-01

    Electric resistivity ρ and thermoelectric power S of Ni 36Nb 24Zr 40 and (Ni 0.36Nb 0.24Zr 0.4) 90H 10 glassy alloys were investigated in temperature region between 1.5 and 300 K. After resistivity curves of both alloys increase gradually with decreasing temperature down to around 6 K, they dropped suddenly and then reached zero resistivity at 2.1 K, leading to superconductivity. Linear curve with negative TCR of ρ vs T2 and slight increase of S/ T in temperature region down to around 6 K clearly reveal Fermi-liquid phenomenon in electronic state for both alloys independent of hydrogen content.

  8. Electric resistivity and thermoelectricity of Ni-Nb-Zr and Ni-Nb-Zr-H glassy alloys

    International Nuclear Information System (INIS)

    Fukuhara, Mikio; Inoue, Akihisa

    2010-01-01

    Electric resistivity ρ and thermoelectric power S of Ni 36 Nb 24 Zr 40 and (Ni 0.36 Nb 0.24 Zr 0.4 ) 90 H 10 glassy alloys were investigated in temperature region between 1.5 and 300 K. After resistivity curves of both alloys increase gradually with decreasing temperature down to around 6 K, they dropped suddenly and then reached zero resistivity at 2.1 K, leading to superconductivity. Linear curve with negative TCR of ρ vs T 2 and slight increase of S/T in temperature region down to around 6 K clearly reveal Fermi-liquid phenomenon in electronic state for both alloys independent of hydrogen content.

  9. High thermoelectric potential of Bi{sub 2}Te{sub 3} alloyed GeTe-rich phases

    Energy Technology Data Exchange (ETDEWEB)

    Madar, Naor; Givon, Tom; Mogilyansky, Dmitry; Gelbstein, Yaniv [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel)

    2016-07-21

    In an attempt to reduce our reliance on fossil fuels, associated with severe environmental effects, the current research is focused on the identification of the thermoelectric potential of p-type (GeTe){sub 1−x}(Bi{sub 2}Te{sub 3}){sub x} alloys, with x values of up to 20%. Higher solubility limit of Bi{sub 2}Te{sub 3} in GeTe, than previously reported, was identified around ∼9%, extending the doping potential of GeTe by the Bi{sub 2}Te{sub 3} donor dopant, for an effective compensation of the high inherent hole concentration of GeTe toward thermoelectrically optimal values. Around the solubility limit of 9%, an electronic optimization resulted in an impressive maximal thermoelectric figure of merit, ZT, of ∼1.55 at ∼410 °C, which is one of the highest ever reported for any p-type GeTe-rich alloys. Beyond the solubility limit, a Fermi Level Pinning effect of stabilizing the Seebeck coefficient was observed in the x = 12%–17% range, leading to stabilization of the maximal ZTs over an extended temperature range; an effect that was associated with the potential of the governed highly symmetric Ge{sub 8}Bi{sub 2}Te{sub 11} and Ge{sub 4}Bi{sub 2}Te{sub 7} phases to create high valence band degeneracy with several bands and multiple hole pockets on the Fermi surface. At this compositional range, co-doping with additional dopants, creating shallow impurity levels (in contrast to the deep lying level created by Bi{sub 2}Te{sub 3}), was suggested for further electronic optimization of the thermoelectric properties.

  10. Characterization of the interface between an Fe–Cr alloy and the p-type thermoelectric oxide Ca3Co4O9

    DEFF Research Database (Denmark)

    Holgate, Tim; Han, Li; Wu, NingYu

    2014-01-01

    A customized Fe–Cr alloy that has been optimized for high temperature applications in oxidizing atmospheres has been interfaced via spark plasma sintering (SPS) with a p-type thermoelectric oxide material: calcium cobaltate (Ca3Co4O9). The properties of the alloy have been analyzed for its...... calcium and chromium in the interface that is highly resistive at room temperature, but conducting at the intended thermoelectric device hot-side operating temperature of 800 °C. As the alloy is well matched in terms of its thermal expansion and highly conducting compared to the Ca3Co4O9, it may...... be further considered as an interconnect material candidate at least with application on the hot-side of an oxide thermoelectric power generation module....

  11. ZnO-based semiconductors studied by Raman spectroscopy. Semimagnetic alloying, doping, and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Schumm, Marcel

    2009-07-01

    ZnO-based semiconductors were studied by Raman spectroscopy and complementary methods (e.g. XRD, EPS) with focus on semimagnetic alloying with transition metal ions, doping (especially p-type doping with nitrogen as acceptor), and nanostructures (especially wet-chemically synthesized nanoparticles). (orig.)

  12. Influence of nanosized inclusions on the room temperature thermoelectrical properties of a p-type bismuth–tellurium–antimony alloy

    International Nuclear Information System (INIS)

    Bernard-Granger, Guillaume; Addad, Ahmed; Navone, Christelle; Soulier, Mathieu; Simon, Julia; Szkutnik, Pierre-David

    2012-01-01

    Transmission electron microscopy observations and thermoelectrical property measurements (electrical conductivity, Seebeck coefficient and thermal conductivity) at room temperature have been completed on two fully dense polycrystalline p-type bismuth–tellurium–antimony alloy samples. It is shown that the presence of antimony oxide-based nanosized inclusions (controlled as to volume fraction and size distribution), homogeneously dispersed in the surrounding matrix leads to a dimensionless figure of merit (ZT) of ∼1.3 at room temperature. For comparison, when such inclusions are missing the ZT value is only 0.6.

  13. Effect mutual carrying away of electrons and photons on thermomagnet and thermoelectric phenomena in semiconductors with generated statistics of current carriers

    International Nuclear Information System (INIS)

    Kuliev, I.G.

    2000-01-01

    One studied the effects of the mutual carrying away of electrons and phonons on the thermomagnetic and thermoelectric phenomena in semiconductors with the degenerated statistics of current carriers. One estimated the conduction current within nonequilibrium electron-phonon system in the linear approximation on the basis of the degeneration parameter. Under the isothermal conductors the mutual carrying away was shown to affect essentially the values of the Nernst-Ettingshausen effects. One estimated the heat flow and analyzed the dependence of heat conductivity and of the Muggy-Regge (MR) effect on the magnetic field. The contribution of the mutual carrying away into the isothermal MR-effect was determined to be proportional to the degeneration parameter. One studied thermomagnetic and thermoelectric effects in the degenerated conductors with regard to the mutual carrying away of electrons and phonons both under the isothermal and under the adiabatic conditions [ru

  14. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  15. Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

    Directory of Open Access Journals (Sweden)

    Zheng Huang

    2015-09-01

    Full Text Available We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.

  16. Semiconductor properties and protective role of passive films of iron base alloys

    International Nuclear Information System (INIS)

    Fujimoto, Shinji; Tsuchiya, Hiroaki

    2007-01-01

    Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H 2 SO 4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the other hand, the passive film of the Fe-18Cr alloy in the sulphuric acid consists of p-type oxide and n-type hydroxide layers. The behaviour of passive film growth and corrosion was discussed in terms of the electronic structure in the passive film

  17. Electronic structure calculations on nitride semiconductors and their alloys

    International Nuclear Information System (INIS)

    Dugdale, D.

    2000-09-01

    Calculations of the electronic properties of AIN, GaN, InN and their alloys are presented. Initial calculations are performed using the first principles pseudopotential method to obtain accurate lattice constants. Further calculations then investigate bonding in the nitrides through population analysis and density of state calculations. The empirical pseudopotential method is also used in this work. Pseudopotentials for each of the nitrides are constructed using a functional form that allows strained material and alloys to be studied. The conventional k.p valence band parameters for both zincblende and wurtzite are obtained from the empirical band structure using two different methods. A Monte-Carlo fitting of the k.p band structure to the pseudopotential data (or an effective mass method for the zincblende structure) is used to produce one set. Another set is obtained directly from the momentum matrix elements and energy eigenvalues at the centre of the Brillouin zone. Both methods of calculating k.p parameters produce band structure in excellent agreement with the original empirical band calculations near the centre of the Brillouin zone. The advantage of the direct method is that it produces consistent sets of parameters, and can be used in studies involving a series of alloy compositions. Further empirical pseudopotential method calculations are then performed for alloys of the nitrides. In particular, the variation of the band gap with alloy composition is investigated, and good agreement with theory and experiment is found. The direct method is used to obtain k.p parameters for the alloys, and is contrasted with the fitting approach. The behaviour of the nitrides under strain is also studied. In particular. valence band offsets for nitride heterojunctions are calculated, and a strong forward- backward asymmetry in the band offset is found, in good agreement with other results in the literature. (author)

  18. Analysis of polarized photoluminescence emission of ordered III–V semiconductor quaternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Prutskij, Tatiana, E-mail: tatiana.prutskij@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Makarov, Nykolay, E-mail: nykolay.makarov@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Attolini, Giovanni, E-mail: giovanni@imem.cnr.it [IMEM/CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy)

    2016-04-15

    Ternary and quaternary III–V alloys obtained by metal-organic vapor-phase epitaxy (MOVPE) grow very often with some degree of atomic ordering. Atomic ordering reduces the symmetry of the crystal lattice and thus drastically changes optical properties of the alloy. Moreover, the photoluminescence (PL) emission becomes polarized and its study helps to understand the atomic arrangement within the crystal lattice. In this work we experimentally studied the polarization of the PL emission from different crystallographic planes of several quaternary III–V semiconductor alloys grown on GaAs substrates by MOVPE. We compare the measured PL emission polarization angular patterns with those calculated with a model made for ternary alloys and discuss the limits of application of this model for quaternaries. It is found that the experimentally obtained polarization patterns are consistent with the existence of different ordering crystallographic planes for III- and for V-group atoms.

  19. Influence of hydrogen on the thermoelectric power of palladium alloyed with neighbouring elements: I. Pd/Ru/H and Pd/Rh/H alloys

    CERN Document Server

    Szafranski, A W

    2003-01-01

    Pd/Ru and Pd/Rh alloys have been loaded with hydrogen in high-pressure conditions. The resulting hydrogen contents were close to the stoichiometric composition, H/(Pd + Me) = 1. Lower hydrogen contents have been obtained by successive partial desorptions. The thermoelectric power and electrical resistance of one- and two-phase alloys have been measured simultaneously in the temperature range between 80 and 300 K. A Nordheim-Gorter type correlation of the two quantities has been observed in many cases and the partial thermopowers corresponding to electron-phonon scattering and lattice disorder could be determined. The observed anomalous behaviour of the total and partial thermopowers is attributed to virtual bound states of ruthenium or rhodium.

  20. Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

    DEFF Research Database (Denmark)

    Chavez, Ruben; Angst, Sebastian; Hall, Joseph

    2017-01-01

    In many industrial processes a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited...... in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring...... in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against...

  1. Electronic tuning of the transport properties of off-stoichiometric PbxSn1−xTe thermoelectric alloys by Bi2Te3 doping

    International Nuclear Information System (INIS)

    Guttmann, Gilad M.; Dadon, David; Gelbstein, Yaniv

    2015-01-01

    The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb x Sn 1−x Te alloys by tuning of Bi 2 Te 3 doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb 0.5 Sn 0.5 Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected

  2. Phase diagram of nanoscale alloy particles used for vapor-liquid-solid growth of semiconductor nanowires.

    Science.gov (United States)

    Sutter, Eli; Sutter, Peter

    2008-02-01

    We use transmission electron microscopy observations to establish the parts of the phase diagram of nanometer sized Au-Ge alloy drops at the tips of Ge nanowires (NWs) that determine their temperature-dependent equilibrium composition and, hence, their exchange of semiconductor material with the NWs. We find that the phase diagram of the nanoscale drop deviates significantly from that of the bulk alloy, which explains discrepancies between actual growth results and predictions on the basis of the bulk-phase equilibria. Our findings provide the basis for tailoring vapor-liquid-solid growth to achieve complex one-dimensional materials geometries.

  3. Mechanical properties of some binary, ternary and quaternary III-V compound semiconductor alloys

    International Nuclear Information System (INIS)

    Navamathavan, R.; Arivuoli, D.; Attolini, G.; Pelosi, C.; Choi, Chi Kyu

    2007-01-01

    Vicker's microindentation tests have been carried out on InP/InP, GaAs/InP, InGaAs/InP and InGaAsP/InP III-V compound semiconductor alloys. The detailed mechanical properties of these binary, ternary and quaternary epilayers were determined from the indentation experiments. Microindentation studies of (1 1 1) GaAs/InP both A and B faces show that the hardness value increases with load and attains a constant for further increase in load and the microhardness values were found to lie between 3.5 and 4.0 GPa. The microhardness values of InGaAs/InP epilayers with different thickness were found to lie between 3.93 and 4.312 GPa. The microhardness values of InGaAsP/InP with different elemental composition were found to lie between 5.08 and 5.73 GPa. The results show that the hardness of the quaternary alloy drastically increases, the reason may be that the increase in As concentration hardens the lattice when phosphorous concentration is less and hardness decreases when phosphorous is increased. It was interestingly observed that the hardness value increases as we proceed from binary to quaternary III-V compound semiconductor alloys

  4. Thermoelectric properties of fine-grained FeVSb half-Heusler alloys tuned to p-type by substituting vanadium with titanium

    International Nuclear Information System (INIS)

    Zou, Minmin; Li, Jing-Feng; Kita, Takuji

    2013-01-01

    Fine-grained Ti-doped FeVSb half-Heusler alloys were synthesized by combining mechanical alloying and spark plasma sintering and their thermoelectric properties were investigated with an emphasis on the influences of Ti doping and phase purity. It was found that substituting V with Ti can change the electrical transport behavior from n-type to p-type due to one less valence electron of Ti than V, and the sample with nominal composition FeV 0.8 Ti 0.4 Sb exhibits the largest Seebeck coefficient and the maximum power factor. By optimizing the sintering temperature and applying annealing treatment, the power factor is significantly improved and the thermal conductivity is reduced simultaneously, resulting in a ZT value of 0.43 at 500 °C, which is relatively high as for p-type half-Heusler alloys containing earth-abundant elements. - Graphical abstract: Fine-grained Ti-doped FeVSb alloys were prepared by the MA-SPS method. The maximum ZT value reaches 0.43 at 500 °C, which is relatively high for p-type half-Heusler alloys. Highlights: ► Ti-doped FeVSb half-Heusler alloys were synthesized by combining MA and SPS. ► Substituting V with Ti changes the electrical behavior from n-type to p-type. ► Thermoelectric properties are improved by optimizing sintering temperature. ► Thermoelectric properties are further improved by applying annealing treatment. ► A high ZT value of 0.43 is obtained at 500 °C for p-type Ti-doped FeVSb alloys.

  5. Effect of Synthesis Procedure on Thermoelectric Property of SiGe Alloy

    Science.gov (United States)

    Li, Jing; Han, Jun; Jiang, Tao; Luo, Lili; Xiang, Yongchun

    2018-05-01

    SiGe thermoelectric material has been synthesized by ball milling combined with hot pressing (HP) or spark plasma sintering (SPS). Effects of ball milling time, powder to ball weight ratio and sintering method on microstructure and thermoelectric properties of SiGe are studied. The results show that longer ball milling time leads to decreased density and worse electrical properties. In the sintering process, SPS results in much larger density and better electrical properties than HP. The Si0.795Ge0.2B0.005 sample prepared by 2 h ball milling combined with SPS obtains a maximum power factor of 3.0 mW m-1 K-2 at 860 K and ZT of 0.95 at 1000 K.

  6. High Performance High Temperature Thermoelectric Composites with Metallic Inclusions

    Science.gov (United States)

    Ma, James M. (Inventor); Bux, Sabah K. (Inventor); Fleurial, Jean-Pierre (Inventor); Ravi, Vilupanur A. (Inventor); Firdosy, Samad A. (Inventor); Star, Kurt (Inventor); Kaner, Richard B. (Inventor)

    2017-01-01

    The present invention provides a composite thermoelectric material. The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectric material can further include a metal forming metallic inclusions distributed throughout the semiconductor material. The present invention also provides a method of forming this composite thermoelectric material.

  7. A 3D TCAD simulation of a thermoelectric module configured for thermoelectric power generation, cooling and heating

    Science.gov (United States)

    Gould, C. A.; Shammas, N. Y. A.; Grainger, S.; Taylor, I.; Simpson, K.

    2012-06-01

    This paper documents the 3D modeling and simulation of a three couple thermoelectric module using the Synopsys Technology Computer Aided Design (TCAD) semiconductor simulation software. Simulation results are presented for thermoelectric power generation, cooling and heating, and successfully demonstrate the basic thermoelectric principles. The 3D TCAD simulation model of a three couple thermoelectric module can be used in the future to evaluate different thermoelectric materials, device structures, and improve the efficiency and performance of thermoelectric modules.

  8. Evolution of Thermoelectric Properties of Zn4Sb3 Prepared by Mechanical Alloying and Different Consolidation Routes

    Directory of Open Access Journals (Sweden)

    Pee-Yew Lee

    2018-05-01

    Full Text Available In this research, a method combining the mechanical alloying with the vacuum sintering or hot pressing was adopted to obtain the compact of β-Zn4Sb3. Pure zinc and antimony powders were used as the starting material for mechanical alloying. These powders were mixed in the stoichiometry ratio of 4 to 3, or more Zn-rich. Single phase Zn4Sb3 was produced using a nominally 0.6 at. % Zn rich powder. Thermoelectric Zn4Sb3 bulk specimens have been fabricated by vacuum sintering or hot pressing of mechanically alloyed powders at various temperatures from 373 to 673 K. For the bulk specimens sintering at high temperature, phase transformation of β-Zn4Sb3 to ZnSb and Sb was observed due to Zn vaporization. However, single-phase Zn4Sb3 bulk specimens with 97.87% of theoretical density were successfully produced by vacuum hot pressing at 473 K. Electric resistivity, Seebeck coefficient, and thermal conductivity were evaluated for the hot pressed specimens from room temperature to 673 K. The results indicate that the Zn4Sb3 shows an intrinsic p-type behavior. The increase of Zn4Sb3 phase ratio can increase Seebeck coefficient but decrease electric conductivity. The maximum power factor and figure of merit (ZT value were 1.31 × 10−3 W/mK2 and 0.81 at 600 K, respectively. The ZT value was lower than that reported in the available data for materials prepared by conventional melt growth and hot pressed methods, but higher than the samples fabricated by vacuum melting and heat treatment techniques.

  9. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    Energy Technology Data Exchange (ETDEWEB)

    Teubert, Joerg

    2008-07-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  10. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    International Nuclear Information System (INIS)

    Teubert, Joerg

    2008-01-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  11. Effects of hydrostatic pressure on the thermoelectric properties of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds: an ab initio study

    Science.gov (United States)

    Elsayed, H.; Olguín, D.; Cantarero, A.

    2017-12-01

    This work presents an ab initio study of the effects of hydrostatic pressure on the Seebeck coefficients and thermoelectric power factors of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds. Our study is performed using the semi-classical Boltzmann theory and the rigid band approach. The electronic band structures of these materials are calculated using the full-potential linearized augmented plane-wave method. The obtained thermoelectric properties are discussed in terms of the results of the electronic structure calculations. As we will show, our calculated Seebeck coefficient values indicate that these materials are good alternatives to other well-studied thermoelectric systems.

  12. Compatibility between Co-Metallized PbTe Thermoelectric Legs and an Ag-Cu-In Brazing Alloy.

    Science.gov (United States)

    Ben-Ayoun, Dana; Sadia, Yatir; Gelbstein, Yaniv

    2018-01-10

    In thermoelectric (TE) generators, maximizing the efficiency of conversion of direct heat to electricity requires the reduction of any thermal and electrical contact resistances between the TE legs and the metallic contacts. This requirement is especially challenging in the development of intermediate to high-temperature TE generators. PbTe-based TE materials are known to be highly efficient up to temperatures of around 500 °C; however, only a few practical TE generators based on these materials are currently commercially available. One reason for that is the insufficient bonding techniques between the TE legs and the hot-side metallic contacts. The current research is focused on the interaction between cobalt-metallized n -type 9.104 × 10 -3 mol % PbI₂-doped PbTe TE legs and the Ag 0.32 Cu 0.43 In 0.25 brazing alloy, which is free of volatile species. Clear and fine interfaces without any noticeable formation of adverse brittle intermetallic compounds were observed following prolonged thermal treatment testing. Moreover, a reasonable electrical contact resistance of ~2.25 mΩmm² was observed upon brazing at 600 °C, highlighting the potential of such contacts while developing practical PbTe-based TE generators.

  13. Compatibility between Co-Metallized PbTe Thermoelectric Legs and an Ag–Cu–In Brazing Alloy

    Science.gov (United States)

    Ben-Ayoun, Dana; Sadia, Yatir; Gelbstein, Yaniv

    2018-01-01

    In thermoelectric (TE) generators, maximizing the efficiency of conversion of direct heat to electricity requires the reduction of any thermal and electrical contact resistances between the TE legs and the metallic contacts. This requirement is especially challenging in the development of intermediate to high-temperature TE generators. PbTe-based TE materials are known to be highly efficient up to temperatures of around 500 °C; however, only a few practical TE generators based on these materials are currently commercially available. One reason for that is the insufficient bonding techniques between the TE legs and the hot-side metallic contacts. The current research is focused on the interaction between cobalt-metallized n-type 9.104 × 10−3 mol % PbI2-doped PbTe TE legs and the Ag0.32Cu0.43In0.25 brazing alloy, which is free of volatile species. Clear and fine interfaces without any noticeable formation of adverse brittle intermetallic compounds were observed following prolonged thermal treatment testing. Moreover, a reasonable electrical contact resistance of ~2.25 mΩmm2 was observed upon brazing at 600 °C, highlighting the potential of such contacts while developing practical PbTe-based TE generators. PMID:29320430

  14. Synthesis and thermoelectric performance of a p-type Bi0.4Sb1.6Te3 material developed via mechanical alloying

    International Nuclear Information System (INIS)

    Jimenez, Sandra; Perez, Jose G.; Tritt, Terry M.; Zhu, Song; Sosa-Sanchez, Jose L.; Martinez-Juarez, Javier; López, Osvaldo

    2014-01-01

    Highlights: • This paper shows a Bi 1.6 Sb 0.4 Te 3 alloy prepared by MA-SPS process. • A ZT value of about 1.2–1.3 around 360 K was achieved for this compound. • The lower sintering process was carried out in a short time. • The resulting material has a very fine microstructure and high density. - Abstract: A p-type Bi 0.4 Sb 1.6 Te 3 thermoelectric compound was fabricated via mechanical alloying of bismuth, antimony and tellurium elemental powders as starting materials. The mechanically alloyed compositions were sintered through a spark-plasma sintering (SPS) process. The effect of the milling time was investigated. In order to characterize the powders obtained via mechanical alloying, X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) analysis were used. The morphological evolution was studied by scanning electron microscopy (SEM). Results showed that the p-type Bi 0.4 Sb 1.6 Te 3 compound was formed after 2 h of milling. Further, the variation of milling time showed that the synthesized phase was stable. All the powders exhibit the same morphology albeit with slight differences. Measurements of the electrical resistivity, Seebeck coefficient and thermal conductivity were performed in the temperature range 300–520 K for the SPS samples. The resulting thermoelectric figure of merit ZT reaches a maximum of 1.2 at 360 K for the p-type bulk material with a 5 h milling time. This study demonstrates the possibility of preparing thermoelectric materials of high performance and short processing time

  15. Temperature-dependent thermal and thermoelectric properties of n -type and p -type S c1 -xM gxN

    Science.gov (United States)

    Saha, Bivas; Perez-Taborda, Jaime Andres; Bahk, Je-Hyeong; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Sands, Timothy D.

    2018-02-01

    Scandium Nitride (ScN) is an emerging rocksalt semiconductor with octahedral coordination and an indirect bandgap. ScN has attracted significant attention in recent years for its potential thermoelectric applications, as a component material in epitaxial metal/semiconductor superlattices, and as a substrate for defect-free GaN growth. Sputter-deposited ScN thin films are highly degenerate n -type semiconductors and exhibit a large thermoelectric power factor of ˜3.5 ×10-3W /m -K2 at 600-800 K. Since practical thermoelectric devices require both n- and p-type materials with high thermoelectric figures-of-merit, development and demonstration of highly efficient p-type ScN is extremely important. Recently, the authors have demonstrated p-type S c1 -xM gxN thin film alloys with low M gxNy mole-fractions within the ScN matrix. In this article, we demonstrate temperature dependent thermal and thermoelectric transport properties, including large thermoelectric power factors in both n- and p-type S c1 -xM gxN thin film alloys at high temperatures (up to 850 K). Employing a combination of temperature-dependent Seebeck coefficient, electrical conductivity, and thermal conductivity measurements, as well as detailed Boltzmann transport-based modeling analyses of the transport properties, we demonstrate that p-type S c1 -xM gxN thin film alloys exhibit a maximum thermoelectric power factor of ˜0.8 ×10-3W /m -K2 at 850 K. The thermoelectric properties are tunable by adjusting the M gxNy mole-fraction inside the ScN matrix, thereby shifting the Fermi energy in the alloy films from inside the conduction band in case of undoped n -type ScN to inside the valence band in highly hole-doped p -type S c1 -xM gxN thin film alloys. The thermal conductivities of both the n- and p-type films were found to be undesirably large for thermoelectric applications. Thus, future work should address strategies to reduce the thermal conductivity of S c1 -xM gxN thin-film alloys, without affecting

  16. Influence of temperature on thermoelectric properties of Fe{sub x}Co{sub 1−x}S{sub 2} thin films: A semiconductor to semimetal conversion

    Energy Technology Data Exchange (ETDEWEB)

    Clamagirand, J.M.; Ares, J.R., E-mail: joser.ares@uam.es; Flores, E.; Diaz-Chao, P.; Leardini, F.; Ferrer, I.J.; Sánchez, C.

    2016-02-01

    In this work, we investigate the thermoelectric properties of p and n-type thin films obtained by cobalt doping of FeS{sub 2}. Films were synthesized by direct sulfuration of Co–Fe thin bilayers at 300 °C. It is found that at room temperature (RT), the Seebeck coefficient is reduced from 80 μV/K to − 70 μV/K when Co concentration is increased and the electrical resistivity of the films is decreased two orders of magnitude. X-ray diffraction and Raman measurements point out that Co is replacing Fe into the pyrite lattice and, subsequently is promoting a semiconductor to semimetal conversion. The influence of temperature on transport properties of different Fe{sub x}Co{sub 1−x}S{sub 2} films has been investigated. Whereas the Seebeck coefficient is hardly modified, the film resistivity is drastically decreased when temperature increases what has been attributed to the thermal activation of electrical carriers. The influence of Co doping on the band scheme of FeS{sub 2} is shown. To this aim, donor and acceptor states are included into its forbidden gap. Whereas the band scheme of FeS{sub 2} exhibits an acceptor level with an E = 0.11 ± 0.03 eV above the top of the valence band due to iron vacancies, a wide donor level close to the bottom of the conduction band (E = 0.08 ± 0.05 eV) is created by the progressive replacement of iron by cobalt into the FeS{sub 2} lattice. - Highlights: • Thermoelectric properties of pyrite and Co-doped pyrite thin films were measured. • Whereas ρ decreases, S remains practically unaltered on increasing temperature (RT-300 °C). • On increasing Co-concentration, films exhibit a p semiconductor to n type semimetal conversion. • Donor states close to the botton of the conduction band are created by Co doping. • Energy of the donor level decreases and gets wider due to Co-concentration.

  17. Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

    Directory of Open Access Journals (Sweden)

    Abdellah Boulouz

    2014-01-01

    Full Text Available The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T at room temperature for Bi2Te3, and (Bi1−xSbx2Te3 with x = 0.77 are found to be −220 µV/K and +240 µV/K, respectively. Fabrication and evaluation of performance devices are reported. 2.60°C of cooling of only one Peltier module device for an optimal current of Iopt=2.50 mA is obtained. The values of temperature measured by infrared camera, by simulation, and those measured by the integrated and external thermocouple are reported. A sensitivity of the sensors of 5 mV Torr−1 mW−1 for the pressure sensor has been found with a response time of about 600 ms.

  18. Reduction of the thermal conductivity of the thermoelectric material ScN by Nb alloying

    DEFF Research Database (Denmark)

    Tureson, Nina; Van Nong, Ngo; Fournier, Daniele

    2017-01-01

    ) orientation. The crystal structure, morphology, thermal conductivity, and thermoelectric and electrical properties were investigated. The ScN reference film exhibited a Seebeck coefficient of −45 μV/K and a power factor of 6 × 10−4 W/m K2 at 750 K. Estimated from room temperature Hall measurements, all...... samples exhibit a high carrier density of the order of 1021 cm−3. Inclusion of heavy transition metals into ScN enables the reduction in thermal conductivity by an increase in phonon scattering. The Nb inserted ScN thin films exhibited a thermal conductivity lower than the value of the ScN reference (10.......5 W m−1 K−1) down to a minimum value of 2.2 Wm−1 K−1. Insertion of Nb into ScN thus resulted in a reduction in thermal conductivity by a factor of ∼5 due to the mass contrast in ScN, which increases the phonon scattering in the material....

  19. Thermoelectrode for thermoelectric converter

    International Nuclear Information System (INIS)

    Bodiul, Pavel; Bondarciuc, Nicolae; Ghitu, Dumitru; Nikolaeva, Albina; Konopko, Leonid; Turcan, Ana

    2008-01-01

    The invention relates to the electronic engneering and can be used for manufacturing of thermoelectrodes for thermoelectric converters. The thermoelectrode is made of semiconductor anisotropic material in the form of thread in glass insulation. At the same timer, the thread is made of stannum-doped tellurium in the ratio of 0.1...3 at.%.

  20. Thermoelectrically cooled semiconductor detectors for non-destructive analysis of works of art by means of energy dispersive X-ray fluorescence

    CERN Document Server

    Cesareo, R; Castellano, A

    1999-01-01

    Thermoelectrically cooled semiconductor detectors, such as Si-PIN, Si-drift, Cd sub 1 sub - sub x Zn sub x Te and HgI sub 2 , coupled to miniaturized low-power X-ray tubes, are well suited in portable systems for energy-dispersive X-ray fluorescence (EDXRF), analysis of archaeological samples. The Si-PIN detector is characterized by a thickness of about 300 mu m, an area of about 2x3 mm sup 2 , an energy resolution of about 200-250 eV at 5.9 keV and an entrance window of 25-75 mu m. The Si-drift detector has approximately the same area and thickness, but an energy resolution of 155 eV at 5.9 keV. The efficiency of these detectors is around 100% from 4 to 10 keV, and then decreases versus energy, reaching approx 9% at 30 keV. Coupled to a miniaturized 10 kV, 0.1 mA, Ca-anode or to a miniaturized 30 kV, 0.1 mA, W-anode X-ray tubes, portable systems can be constructed, which are able to analyse K-lines of elements up to about silver, and L-lines of heavy elements. The Cd sub 1 sub - sub x Zn sub x Te detector ha...

  1. Barkhausen noise and thermoelectric power applied to study microstructural evolutions in metallic alloys

    International Nuclear Information System (INIS)

    Kleber, X.; Borrelly, R.; Vincent, A.

    2001-01-01

    The increase in complexity, dimensions and production rate of parts as well as the reduction of production time govern rapid technical evolutions of moulds and tools. The hot isostatic pressing process (HIP) provides solutions adapted to the fabrication of complex and reliable moulds and tools. In a HIP installation, parts are treated at high temperature and pressure (typically 1000 deg. C and 1000 bars). During HIP, materials previously tightly sealed in a canister are fully densified and/or welded together. Powder densification and/or solid state welding can be achieved. Multi-material and multi function components can be manufactured by this process: components equipped with complex cooling channels obtained by the densification of a powder material surrounding tubes; components made of a structural material (steel) and a high thermal conductivity material (copper alloy) or a wear / corrosion resistant one (nickel alloy). Industrial applications already exist which are related to material forming: extrusion screws and sleeves, continuous casting nozzles... as well as related to mechanical parts: rotary actuator ring gears, valve seats... The economic context is in favour of the development of these processes thanks to the operation of large HIP devices that offer moderate unit costs. (authors)

  2. Ion beam synthesis and characterization of metastable group-IV alloy semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, Naoto; Hasegawa, Masataka; Hayashi, Nobuyuki; Makita, Yunosuke; Shibata, Hajime [Electrotechnical Lab., Tsukuba, Ibaraki (Japan); Katsumata, Hiroshi; Uekusa, Shin-ichiro

    1997-03-01

    New Group-IV metastable alloy semiconductors and their heterostructures based on combinations of C-Si-Ge-Sn are recently attracting interest because of feasible new electronic and optoelectronic application in Si-technology and here research works on synthesis and characterization of the epitaxial heterostructures of Si-C, Si-Sn on Si fabricated by ion implantation together either with ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG) have been investigated. Formations of layers of Si{sub 1-y}C{sub y} (y=0.014 at peak concentration) on Si(100) have been performed by high-dose implantation of 17 keV C ions and successive IBIEC with 400 keV Ar or Ge ion bombardments at 300-400degC or SPEG up to 750degC. Crystalline growth by IBIEC has shown a lower growth rate in Si{sub 1-y}C{sub y}/Si than in intrinsic Si due mainly to the strain existence, which was observed by the X-ray diffraction (XRD) measurements. Photoluminescence(PL) measurements have revealed I{sub 1} or G line emissions that are relevant to small vacancy clusters or C pair formation, respectively. The crystalline growth of Si{sub 1-z}Sn{sub z} layers by 110 keV {sup 120}Sn ion implantation (z=0.029 and z=0.058 at peak concentration) into Si(100) followed either by IBIEC or by SPEG has been also investigated. PL emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I{sub 1} or I{sub 1}-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-C and Si-Sn alloy semiconductors. (J.P.N.)

  3. Electronic tuning of the transport properties of off-stoichiometric Pb{sub x}Sn{sub 1−x}Te thermoelectric alloys by Bi{sub 2}Te{sub 3} doping

    Energy Technology Data Exchange (ETDEWEB)

    Guttmann, Gilad M. [The Unit of Energy Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Dadon, David [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Gelbstein, Yaniv [The Unit of Energy Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel)

    2015-08-14

    The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb{sub x}Sn{sub 1−x}Te alloys by tuning of Bi{sub 2}Te{sub 3} doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb{sub 0.5}Sn{sub 0.5}Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected.

  4. Introduction to thermoelectricity

    CERN Document Server

    Goldsmid, H Julian

    2016-01-01

    This book is a comprehensive introduction to all aspects of thermoelectric energy conversion. It covers both theory and practice. The book is timely as it refers to the many improvements that have come about in the last few years through the use of nanostructures. The concept of semiconductor thermoelements led to major advances during the second half of the twentieth century, making Peltier refrigeration a widely used technique. The latest materials herald thermoelectric generation as the preferred technique for exploiting low-grade heat. The book shows how progress has been made by increasing the thermal resistivity of the lattice until it is almost as large as it is for glass. It points the way towards the attainment of similar improvements in the electronic parameters. It does not neglect practical considerations, such as the desirability of making thermocouples from inexpensive and environmentally acceptable materials. The second edition was extended to also include recent advances in thermoelectric ener...

  5. Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors; Thermoelektrische Eigenschaften duenner Schichten und Uebergitterstrukturen von IV-VI- und V-VI-Verbundhalbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Blumers, Mathias

    2012-02-29

    The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S{sup 2}.{sigma}/k, where S is the Seebeck-coefficient, {sigma} is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb{sub 1-x}Sr{sub x}Te and Bi{sub 2}(Se{sub x}Te{sub 1-x}){sub 3}, respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, {sigma} and {kappa} parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,{sigma},{kappa}) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

  6. Measurement of the thermoelectric properties of quasicrystalline AlPdRe and AlCuFe alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, M L; LeGault, S; Stroud, R M; Tritt, T M

    1997-07-01

    The authors report the measurement of the thermal conductivity, electrical resistivity, and thermoelectric power on two quasicrystalline compounds, Al{sub 70}Pd{sub 20}Re{sub 10} and Al{sub 62.5}Cu{sub 25}Fe{sub 12.5}. These materials are found to possess a thermal conductivity of order 1 W/m{center{underscore}dot}K, while retaining their semimetallic conductivity. These features coupled with moderately large thermopowers, up to 55 {micro}V/K, imply that the general class of quasicrystalline compounds warrants careful investigation for their potential as new thermoelectric materials.

  7. Ab initio study of domain structures in half-metallic CoTi{sub 1−x}Mn{sub x}Sb and thermoelectric CoTi{sub 1−x}Sc{sub x}Sb half-Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Miranda Mena, Joaquin, E-mail: joaquin.miranda@uni-bayreuth.de; Schoberth, Heiko G.; Gruhn, Thomas; Emmerich, Heike

    2015-11-25

    We present first-principles calculations of the electronic density of state, the structures in CoTi{sub 1−x}Sc{sub x}Sb and CoTi{sub 1−x}Mn{sub x}Sb. In addition for the latter we calculate magnetic moments. Systems with different stoichiometries are compared and low energy configurations are determined using a cluster expansion procedure. For all studied manganese concentrations, x > 0, CoTi{sub 1−x}Mn{sub x}Sb is half-metallic and magnetic, which make it interesting for spintronic applications. In contrast, with increasing scandium concentration, the band gap of CoTi{sub x}Sc{sub 1-x}Sb closes continuously, while the material changes from a semiconductor to a non-magnetic metal. For low Sc doping this material is well suited for thermoelectric applications. The electronic states close to the Fermi energy are strongly influenced by the distribution of Ti and Mn (or Ti and Sc). This has important consequences for the usage of materials in application fields like spintronics and thermoelectrics. In general, a phase separation of the alloys into a Ti rich and a Ti poor phase is energetically favored. Using mean field theory we create a phase diagram that shows the coexistence and the spinodal region. A spontaneous demixing can be used for the creation of nanodomains within the material. In the case of CoTi{sub 1−x}Sc{sub x}Sb, the resulting reduced lattice thermal conductivity is beneficial for thermoelectric applications, while in CoTi{sub 1−x}Mn{sub x}Sb the nanodomains are detrimental for polarization.

  8. Thermoelectric properties of p-type (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} fabricated by mechanical alloying process

    Energy Technology Data Exchange (ETDEWEB)

    Jung, B Y; Choi, J S; Oh, T S; Hyun, D B

    1997-07-01

    Thermoelectric properties of polycrystalline (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} (0.75 {le} x {le} 0.85), fabricated by mechanical alloying and hot pressing methods, have been investigated. Formation of (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} alloy powder was completed by mechanical alloying for 5 hours at ball-to-material ratio of 5:1, and processing time for (Bi{sub 1{minus}sub x}Sb{sub x}){sub 2}Te{sub 3} formation increased with Sb{sub 2}Te{sub 3} content x. When (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} was hot pressed at temperatures ranging from 300 C to 550 C for 30 minutes, figure-of-merit increased with hot pressing temperature and maximum value of 2.8 x 10{sup {minus}3}/K could be obtained by hot pressing at 550 C. When hot pressed at 550 C, (Bi{sub 0.2}Sb{sub 0.8}){sub 2}Te{sub 3} exhibited figure-of-merit of 2.92 x 10{sup {minus}3}/K, which could be improved to 2.97 x 10{sup {minus}3}/K with addition of 1 wt% Sb as acceptor dopant.

  9. High-performance Ag0.8Pb18+xSbTe20 thermoelectric bulk materials fabricated by mechanical alloying and spark plasma sintering

    International Nuclear Information System (INIS)

    Wang Heng; Li Jingfeng; Nan Cewen; Zhou Min; Liu Weishu; Zhang Boping; Kita, Takuji

    2006-01-01

    Polycrystalline Ag n Pb m SbTe m+2n thermoelectric materials, whose compositions can be described as Ag 0.8 Pb 18+x SbTe 20 were prepared using a combined process of mechanical alloying and spark plasma sintering. Electric properties of the sintered samples with different Pb contents were measured from room temperature to 700 K. The maximum power factor of 1.766 mW/mK 2 was obtained at 673 K for the Ag 0.8 Pb 22 SbTe 20 sample, which corresponds to a high dimensionless figure of merit, ZT=1.37. This best composition is different from that reported before

  10. Thermoelectric power of Bi and Bi{sub 1{minus}x}Sb{sub x} alloy thin films and superlattices grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Cho, S; DiVenere, A; Wong, G K; Ketterson, J B; Meyer, J R; Hoffman, C A

    1997-07-01

    The authors have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi{sub 1{minus}x} alloy thin films and superlattices as a function of temperature in the range 20--300 K. They have observed that the TEP of a Bi thin film of 1 {micro}m thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 {angstrom} and 800 {angstrom} Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi{sub 1{minus}x}Sb{sub x} thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi{sub 1{minus}x}Sb{sub x} well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

  11. Microstructures and thermoelectric properties of GeSbTe based layered compounds

    Energy Technology Data Exchange (ETDEWEB)

    Yan, F.; Zhu, T.J.; Zhao, X.B. [Zhejiang University, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Hangzhou (China); Dong, S.R. [Zhejiang University, Department of Information and Electronics Engineering, Hangzhou (China)

    2007-08-15

    Microstructures and thermoelectric properties of Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide semiconductors have been investigated to explore the possibility of their thermoelectric applications. The phase transformation from the face-centered cubic to hexagonal structure was observed in Ge{sub 2}Sb{sub 2}Te{sub 5} compounds prepared by the melt spinning technique. The Seebeck coefficient and electrical resistivity of the alloys were increased due to the enhanced scattering of charge carriers at grain boundaries. The maximum power factors of the rapidly solidified Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} attained 0.975 x 10{sup -3} Wm{sup -1}K{sup -2} at 750 K and 0.767 x 10{sup -3} Wm{sup -1}K{sup -2} at 643 K respectively, higher than those of water quenched counterparts, implying that thermoelectric properties of GeSbTe based layered compounds can be improved by grain refinement. The present results show this class of chalcogenide semiconductors is promising for thermoelectric applications. (orig.)

  12. Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

    Science.gov (United States)

    Chavez, Ruben; Angst, Sebastian; Hall, Joseph; Maculewicz, Franziska; Stoetzel, Julia; Wiggers, Hartmut; Thanh Hung, Le; Van Nong, Ngo; Pryds, Nini; Span, Gerhard; Wolf, Dietrich E.; Schmechel, Roland; Schierning, Gabi

    2018-01-01

    In many industrial processes, a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against temperature induced failure. In our proof-of-principle demonstration, a p-n junction device made from nanocrystalline silicon is at least comparable in its efficiency and power output to conventional devices of the same material and fabrication process, but with the advantage of sustaining high hot side temperatures and oxidative atmosphere.

  13. Thermoelectric properties control due to doping level and sintering conditions for FGM thermoelectric element

    CERN Document Server

    Kajikawa, T; Shiraishi, K; Ohmori, M; Hirai, T

    1999-01-01

    Thermoelectric performance is determined with three factors, namely, Seebeck coefficient, electrical resistivity and thermal conductivity. For metal and single crystalline semiconductor, those factors have close interrelation each $9 other. However, as the sintered thermoelectric element has various levels of superstructure from macro scale and micro scale in terms of the thermoelectric mechanism, the relationship among them is more complex than that for the $9 melt- grown element, so it is suggested that the control of the temperature dependence of thermoelectric properties is possible to enhance the thermoelectric performance for wide temperature range due to FGM approach. The research $9 objective is to investigate the characteristics of the thermoelectric properties for various doping levels and hot-pressed conditions to make the thermoelectric elements for which the temperature dependence of the performance is $9 controlled due to FGM approach varying the doping levels and sintering conditions. By usage ...

  14. Characterization of the interface between an Fe–Cr alloy and the p-type thermoelectric oxide Ca{sub 3}Co{sub 4}O{sub 9}

    Energy Technology Data Exchange (ETDEWEB)

    Holgate, Tim C., E-mail: timholgate@hotmail.com [Dept. of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, Building 779, 4000 Roskilde (Denmark); Han, Li; Wu, NingYu [Dept. of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, Building 779, 4000 Roskilde (Denmark); Bøjesen, Espen D.; Christensen, Mogens; Iversen, Bo B. [Centre for Materials Crystallography, Department of Chemistry and iNANO, Aarhus University, 8000 Aarhus C (Denmark); Nong, Ngo Van; Pryds, Nini [Dept. of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, Building 779, 4000 Roskilde (Denmark)

    2014-01-05

    Highlights: • The competitive thermoelectric oxide Ca{sub 3}Co{sub 4}O{sub 9} and a custom Fe–Cr alloy were interfaced using spark plasma sintering. • Compared to similarly contacted Ni/Ca{sub 3}Co{sub 4}O{sub 9} interfaces, the high-temperature stability and electrical contact resistance were improved. • The successes and issues associated with this interfacing technique and the materials involved are discussed. -- Abstract: A customized Fe–Cr alloy that has been optimized for high temperature applications in oxidizing atmospheres has been interfaced via spark plasma sintering (SPS) with a p-type thermoelectric oxide material: calcium cobaltate (Ca{sub 3}Co{sub 4}O{sub 9}). The properties of the alloy have been analyzed for its compatibility with the Ca{sub 3}Co{sub 4}O{sub 9} in terms of its thermal expansion and transport properties. The thermal and electrical contact resistances have been measured as a function of temperature, and the long term electronic integrity of the interface analyzed by measuring the resistance vs. time at an elevated temperature. The kinetics of the interface have been analyzed through imaging with scanning electron microscopy (SEM), elemental analysis using energy dispersive spectroscopy (EDS), and phase identification with X-ray diffraction (XRD). The results reveal the formation of an intermediate phase containing calcium and chromium in the interface that is highly resistive at room temperature, but conducting at the intended thermoelectric device hot-side operating temperature of 800 °C. As the alloy is well matched in terms of its thermal expansion and highly conducting compared to the Ca{sub 3}Co{sub 4}O{sub 9}, it may be further considered as an interconnect material candidate at least with application on the hot-side of an oxide thermoelectric power generation module.

  15. Evolution of thermoelectric performance for (Bi,Sb)2Te3 alloys from cutting waste powders to bulks with high figure of merit

    Science.gov (United States)

    Fan, Xi‧an; Cai, Xin zhi; Han, Xue wu; Zhang, Cheng cheng; Rong, Zhen zhou; Yang, Fan; Li, Guang qiang

    2016-01-01

    Bi2Te3 based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi2Te3 based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb)2Te3 alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb)2Te3 alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi0.44Sb1.56Te3 was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi0.36Sb1.64Te3 and Bi0.4Sb1.6Te3 alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi2Te3 based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers.

  16. Thermoelectrically cooled semiconductor detectors for non-destructive analysis of works of art by means of energy dispersive X-ray fluorescence

    International Nuclear Information System (INIS)

    Cesareo, Roberto; Ettore Gigante, Giovanni; Castellano, Alfredo

    1999-01-01

    Thermoelectrically cooled semiconductor detectors, such as Si-PIN, Si-drift, Cd 1-x Zn x Te and HgI 2 , coupled to miniaturized low-power X-ray tubes, are well suited in portable systems for energy-dispersive X-ray fluorescence (EDXRF), analysis of archaeological samples. The Si-PIN detector is characterized by a thickness of about 300 μm, an area of about 2x3 mm 2 , an energy resolution of about 200-250 eV at 5.9 keV and an entrance window of 25-75 μm. The Si-drift detector has approximately the same area and thickness, but an energy resolution of 155 eV at 5.9 keV. The efficiency of these detectors is around 100% from 4 to 10 keV, and then decreases versus energy, reaching ∼9% at 30 keV. Coupled to a miniaturized 10 kV, 0.1 mA, Ca-anode or to a miniaturized 30 kV, 0.1 mA, W-anode X-ray tubes, portable systems can be constructed, which are able to analyse K-lines of elements up to about silver, and L-lines of heavy elements. The Cd 1-x Zn x Te detector has an area of 4 mm 2 and a thickness of 3 mm. It has an energy resolution of about 300 eV at 5.9 keV, and an efficiency of 100% over the whole range of X-rays. Finally the HgI 2 detector has an efficiency of about 100% in the whole range of X-rays, and an energy resolution of about 200 eV at 5.9 keV. Coupled to a small 50-60 kV, 1 mA, W-anode X-ray tube, portable systems can be constructed, for the analysis of practically all elements. These systems were applied to analysis in the field of archaeometry and in all applications for which portable systems are needed or at least useful (for example X-ray transmission measurements, X-ray microtomography and so on). Results of in-field use of these detectors and a comparison among these room temperature detectors in relation to concrete applications are presented. More specifically, concerning EDXRF analysis, ancient gold samples were analysed in Rome, in Mexico City and in Milan, ancient bronzes in Sassari, in Bologna, in Chieti and in Naples, and sulfur (due to

  17. Novel phase diagram behavior and materials design in heterostructural semiconductor alloys.

    Science.gov (United States)

    Holder, Aaron M; Siol, Sebastian; Ndione, Paul F; Peng, Haowei; Deml, Ann M; Matthews, Bethany E; Schelhas, Laura T; Toney, Michael F; Gordon, Roy G; Tumas, William; Perkins, John D; Ginley, David S; Gorman, Brian P; Tate, Janet; Zakutayev, Andriy; Lany, Stephan

    2017-06-01

    Structure and composition control the behavior of materials. Isostructural alloying is historically an extremely successful approach for tuning materials properties, but it is often limited by binodal and spinodal decomposition, which correspond to the thermodynamic solubility limit and the stability against composition fluctuations, respectively. We show that heterostructural alloys can exhibit a markedly increased range of metastable alloy compositions between the binodal and spinodal lines, thereby opening up a vast phase space for novel homogeneous single-phase alloys. We distinguish two types of heterostructural alloys, that is, those between commensurate and incommensurate phases. Because of the structural transition around the critical composition, the properties change in a highly nonlinear or even discontinuous fashion, providing a mechanism for materials design that does not exist in conventional isostructural alloys. The novel phase diagram behavior follows from standard alloy models using mixing enthalpies from first-principles calculations. Thin-film deposition demonstrates the viability of the synthesis of these metastable single-phase domains and validates the computationally predicted phase separation mechanism above the upper temperature bound of the nonequilibrium single-phase region.

  18. Systematic study of the spin stiffness dependence on phosphorus alloying in the ferromagnetic semiconductor (Ga,Mn)As

    International Nuclear Information System (INIS)

    Shihab, S.; Thevenard, L.; Bardeleben, H. J. von; Gourdon, C.; Riahi, H.; Lemaître, A.

    2015-01-01

    We study the dependence of the spin stiffness constant on the phosphorus concentration in the ferromagnetic semiconductor (Ga,Mn)(As,P) with the aim of determining whether alloying with phosphorus is detrimental, neutral, or advantageous to the spin stiffness. Time-resolved magneto-optical experiments are carried out in thin epilayers. Laser pulses excite two perpendicular standing spin wave modes, which are exchange related. We show that the first mode is spatially uniform across the layer corresponding to a k≈0 wavevector. From the two frequencies and k-vector spacings we obtain the spin stiffness constant for different phosphorus concentrations using weak surface pinning conditions. The mode assessment is checked by comparison to the spin stiffness obtained from domain pattern analysis for samples with out-of-plane magnetization. The spin stiffness is found to exhibit little variation with phosphorus concentration in contradiction with ab-initio predictions

  19. Evolution of thermoelectric performance for (Bi,Sb){sub 2}Te{sub 3} alloys from cutting waste powders to bulks with high figure of merit

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Xi' an, E-mail: groupfxa@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Cai, Xin zhi, E-mail: xzcwust@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Han, Xue wu, E-mail: hanxuewu1990@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Zhang, Cheng cheng, E-mail: zcc516990418@live.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); and others

    2016-01-15

    Bi{sub 2}Te{sub 3} based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi{sub 2}Te{sub 3} based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb){sub 2}Te{sub 3} alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb){sub 2}Te{sub 3} alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi{sub 0.44}Sb{sub 1.56}Te{sub 3} was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi{sub 0.36}Sb{sub 1.64}Te{sub 3} and Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi{sub 2}Te{sub 3} based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers. - Graphical abstract: Three kinds of typical morphologies for the fractographs: typical lamellar structure, agglomerated submicron-sized granules and dispersed cubic particles from the initial cutting waste powders. - Highlights: • Bi{sub 2}Te{sub 3} based wastes were directly selected as raw materials

  20. Evolution of thermoelectric performance for (Bi,Sb)2Te3 alloys from cutting waste powders to bulks with high figure of merit

    International Nuclear Information System (INIS)

    Fan, Xi'an; Cai, Xin zhi; Han, Xue wu; Zhang, Cheng cheng

    2016-01-01

    Bi 2 Te 3 based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi 2 Te 3 based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb) 2 Te 3 alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb) 2 Te 3 alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi 0.44 Sb 1.56 Te 3 was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi 0.36 Sb 1.64 Te 3 and Bi 0.4 Sb 1.6 Te 3 alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi 2 Te 3 based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers. - Graphical abstract: Three kinds of typical morphologies for the fractographs: typical lamellar structure, agglomerated submicron-sized granules and dispersed cubic particles from the initial cutting waste powders. - Highlights: • Bi 2 Te 3 based wastes were directly selected as raw materials for TE alloys. • Contaminants from cutting fluid and oxides could be effectively removed.

  1. Contact of ZnSb thermoelectric material to metallic electrodes using S-Bond 400 solder alloy

    DEFF Research Database (Denmark)

    Malik, Safdar Abbas; Le, Thanh Hung; Van Nong, Ngo

    2018-01-01

    and metallic electrodes. In this paper, we investigate the joining of ZnSb to Ni and Ag electrodes using a commercial solder alloy S-Bond 400 and hot-pressing technique. Ti and Cr layers are also introduced as a diffusion barrier and microstructure at the interfaces is observed by scanning electron microscopy....... We found that S-bond 400 solder reacts with Ag and Ni electrodes to form different alloys at the interfaces. Cr layer was found to be broken after joining, resulting in a thicker reaction/diffusion layer at the interface, while Ti layer was preserved....

  2. Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production

    Science.gov (United States)

    Lany, Stephan

    2016-06-07

    Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula Sn.sub.1-x(R).sub.xS, where R is selected from magnesium, calcium and strontium, as well as methods of producing the same, are disclosed.

  3. Thermophysical property of undercooled liquid binary alloy composed of metallic and semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H P; Wei, B, E-mail: bbwei@nwpu.edu.c [Department of Applied Physics, Northwestern Polytechnical University, Xi' an 710072 (China)

    2009-02-07

    The thermophysical properties of the liquid Ni-Si binary alloy system were investigated by the molecular dynamics method. The properties investigated include density, excessive volume, enthalpy, mixing enthalpy and specific heat at both superheated and undercooled states. It is found that the density decreases with an increase in the Si content, and so do the temperature coefficients. If the Si content is smaller than 30%, the density changes linearly with the temperature. If it is larger than 30%, the density is a quadratic function of the temperature. The simulated enthalpies of different composition alloys increase linearly with a rise in temperature. This indicates that the specific heats of Ni-Si alloys change little with temperature. The specific heat versus composition first decreases to a minimum value at 50% Si, then experiences a rise to a maximum value at 90% Si and finally falls again. According to the excessive volume and mixing enthalpy, it can be deduced that the Ni-Si alloy system seriously deviates from the ideal solution. Moreover, a comparison was also performed between the present results and the approximated values by the Neumann-Kopp rule. It reveals that this work provides reasonable data in a broad temperature range, especially for the metastable undercooled liquid state.

  4. Thermophysical property of undercooled liquid binary alloy composed of metallic and semiconductor elements

    Science.gov (United States)

    Wang, H. P.; Wei, B.

    2009-02-01

    The thermophysical properties of the liquid Ni-Si binary alloy system were investigated by the molecular dynamics method. The properties investigated include density, excessive volume, enthalpy, mixing enthalpy and specific heat at both superheated and undercooled states. It is found that the density decreases with an increase in the Si content, and so do the temperature coefficients. If the Si content is smaller than 30%, the density changes linearly with the temperature. If it is larger than 30%, the density is a quadratic function of the temperature. The simulated enthalpies of different composition alloys increase linearly with a rise in temperature. This indicates that the specific heats of Ni-Si alloys change little with temperature. The specific heat versus composition first decreases to a minimum value at 50% Si, then experiences a rise to a maximum value at 90% Si and finally falls again. According to the excessive volume and mixing enthalpy, it can be deduced that the Ni-Si alloy system seriously deviates from the ideal solution. Moreover, a comparison was also performed between the present results and the approximated values by the Neumann-Kopp rule. It reveals that this work provides reasonable data in a broad temperature range, especially for the metastable undercooled liquid state.

  5. Materials growth and characterization of thermoelectric and resistive switching devices

    Science.gov (United States)

    Norris, Kate J.

    erbium monoantimonide (ErSb) thin films with thermal conductivities close to or slightly smaller than the alloy limit of the two ternary alloy hosts. Second we consider an ex-situ monitoring technique based on glancing-angle infrared-absorption used to determine small amounts of erbium antimonide (ErSb) deposited on an indium antimonide (InSb) layer, a concept for thermoelectric devices to scatter phonons. Thirdly we begin our discussion of nanowires with the selective area growth (SAG) of single crystalline indium phosphide (InP) nanopillars on an array of template segments composed of a stack of gold and amorphous silicon. Our approach enables flexible and scalable nanofabrication using industrially proven tools and a wide range of semiconductors on various non-semiconductor substrates. Then we examine the use of graphene to promote the growth of nanowire networks on flexible copper foil leading to the testing of nanowire network devices for thermoelectric applications and the concept of multi-stage devices. We present the ability to tailor current-voltage characteristics to fit a desired application of thermoelectric devices by using nanowire networks as building blocks that can be stacked vertically or laterally. Furthermore, in the study of our flexible nanowire network multi-stage devices, we discovered the presence of nonlinear current-voltage characteristics and discuss how this feature could be utilized to increase efficiency for thermoelectric devices. This work indicates that with sufficient volume and optimized doping, flexible nanowire networks could be a low cost semiconductor solution to our wasted heat challenge. Resistive switching devices are two terminal electrical resistance switches that retain a state of internal resistance based on the history of applied voltage and current. The occurrence of reversible resistance switching has been widely studied in a variety of material systems for applications including nonvolatile memory, logic circuits, and

  6. Creep properties of forged 2219 T6 aluminum alloy shell of general-purpose heat source-radioisotope thermoelectric generator

    International Nuclear Information System (INIS)

    Hammond, J.P.

    1981-12-01

    The shell (2219 T6 aluminum forging) of the General Purpose Heat Source-Radioisotope Thermoelectric Generator was designed to retain the generator under sufficient elastic stress to secure it during space flight. A major concern was the extent to which the elastic stress would relax by creep. To determine acceptability of the shell construction material, the following proof tests simulating service were performed: 600 h of testing at 270 0 C under 24.1 MPa stress followed by 10,000 h of storage at 177 0 C under 55.1 MPa, both on the ground; and 10,000 h of flight in space at 270 0 C under 34.4 MPa stress. Additionally, systematic creep testing was performed at 177 and 260 0 C to establish creep design curves. The creep tests performed at 177 0 C revealed comparatively large amounts of primary creep followed by small amounts of secondary creep. The early creep is believed to be abetted by unstable substructures that are annealed out during testing at this temperature. The creep tests performed at 270 0 C showed normal primary creep followed by large amounts of secondary creep. Duplicate proof tests simulating the ground exposure conditions gave results that were in good agreement. The proof test simulating space flight at 270 0 C gave 0.11% primary creep followed by 0.59% secondary creep. About 10% of the second-stage creep was caused by four or five instantaneous strains, which began at the 4500-h mark. One or two of these strain bursts, occurred in each of several other tests at 177 and 260 0 C but were assessed as very moderate in magnitude. The effect is attributable to a slightly microsegregated condition remaining from the original cast structure

  7. semiconducting nanostructures: morphology and thermoelectric properties

    Science.gov (United States)

    Culebras, Mario; Torán, Raquel; Gómez, Clara M.; Cantarero, Andrés

    2014-08-01

    Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1- x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

  8. Preparation and optimization of thermoelectric properties of Bi2Te3 based alloys using the waste particles as raw materials from the cutting process of the zone melting crystal rods

    Science.gov (United States)

    Xiang, Qiusheng; Fan, Xi'an; Han, Xuewu; Zhang, Chengcheng; Hu, Jie; Feng, Bo; Jiang, Chengpeng; Li, Guangqiang; Li, Yawei; He, Zhu

    2017-12-01

    The p-type Bi2Te3 alloys were prepared using the waste particles from the cutting process of the zone melting crystal rods as the main raw materials by impurity removal process including washing, carbon monoxide reduction and vacuum metallurgical process. The thermoelectric properties of the Bi2Te3 based bulk materials were optimized by component adjustment, second smelting and resistance pressing sintering (RPS) process. All evidences confirmed that most of impurities from the line cutting process and the oxidation such as Sb2O3, Bi2O3 and Bi2Te4O11 could be removed by carbon monoxide reduction and vacuum metallurgical process adopted in this work, and the recycling yield was higher than 97%. Appropriate component adjustment treatment was used to optimize the carrier content and corresponding thermoelectric properties. Lastly, a Bi0.36Sb1.64Te3 bulk was obtained and its power factor (PF) could reach 4.24 mW m-1 K-2 at 300 K and the average PF value was over 3.2 mW m-1 K-2 from 300 K to 470 K, which was equivalent with the thermoelectric performance of the zone melting products from high purity elements Bi, Te and Sb. It was worth mentioning that the recovery process introduced here was a simple, low-cost, high recovery rate and green recycling technology.

  9. Development in Zn4Sb-based thermoelectric materials

    DEFF Research Database (Denmark)

    Yin, Hao

    or thermopower,  the electrical conductivity, the thermal conductivity and T the absolute temperature. The best thermoelectrics are heavily doped semiconductors with high thermoelectric power factors and low thermal conductivities, known as “Phonon Glasses Electrical Crystals”. Zn4Sb3 is one such material......-section. The following part reports the effect of nano-particles on the thermoelectric properties and thermal stability of Zn4Sb3. Though TiO2 nano particles have remarkably enhanced the stability, the thermoelectric performance of all the nano-composites deteriorates. Optimization of the content of the nano...

  10. Silicon nanowire networks for multi-stage thermoelectric modules

    International Nuclear Information System (INIS)

    Norris, Kate J.; Garrett, Matthew P.; Zhang, Junce; Coleman, Elane; Tompa, Gary S.; Kobayashi, Nobuhiko P.

    2015-01-01

    Highlights: • Fabricated flexible single, double, and quadruple stacked Si thermoelectric modules. • Measured an enhanced power production of 27%, showing vertical stacking is scalable. • Vertically scalable thermoelectric module design of semiconducting nanowires. • Design can utilize either p or n-type semiconductors, both types are not required. • ΔT increases with thickness therefore power/area can increase as modules are stacked. - Abstract: We present the fabrication and characterization of single, double, and quadruple stacked flexible silicon nanowire network based thermoelectric modules. From double to quadruple stacked modules, power production increased 27%, demonstrating that stacking multiple nanowire thermoelectric devices in series is a scalable method to generate power by supplying larger temperature gradient. We present a vertically scalable multi-stage thermoelectric module design using semiconducting nanowires, eliminating the need for both n-type and p-type semiconductors for modules

  11. Half-heusler alloys with enhanced figure of merit and methods of making

    Science.gov (United States)

    Ren, Zhifeng; Yan, Xiao; Joshi, Giri; Chen, Shuo; Chen, Gang; Poudel, Bed; Caylor, James Christopher

    2015-06-02

    Thermoelectric materials and methods of making thermoelectric materials having a nanometer mean grain size less than 1 micron. The method includes combining and arc melting constituent elements of the thermoelectric material to form a liquid alloy of the thermoelectric material and casting the liquid alloy of the thermoelectric material to form a solid casting of the thermoelectric material. The method also includes ball milling the solid casting of the thermoelectric material into nanometer mean size particles and sintering the nanometer size particles to form the thermoelectric material having nanometer scale mean grain size.

  12. Theoretical study of the noble metals on semiconductor surfaces and Ti-base shape memory alloys

    International Nuclear Information System (INIS)

    Ding, Yungui.

    1994-01-01

    The electronic and structural properties of the (√3 x √3) R30 degrees Ag/Si(111) and (√3 x √3) R30 degrees Au/Si(111) surfaces are investigated using first principles total energy calculations. We have tested almost all experimentally proposed structural models for both surfaces and found the energetically most favorable model for each of them. The lowest energy model structure of the (√3 x √3) R30 degrees Ag/Si(111) surface consists of a top layer of Ag atoms arranged as ''honeycomb-chained-trimers'' lying above a distorted ''missing top layer'' Si(111) substrate. The coverage of Ag is 1 monolayer (ML). We find that the honeycomb structure observed in STM images arise from the electronic charge densities of an empty surface band near the Fermi level. The electronic density of states of this model gives a ''pseudo-gap'' around the Fermi level, which is consistent with experimental results. The lowest energy model for the (√3 x √3) R30 degrees Au/Si(111) surface is a conjugate honeycomb-chained-trimer (CHCT-1) configuration which consists of a top layer of trimers formed by 1 ML Au atoms lying above a ''missing top layer'' Si(111) substrate with a honeycomb-chained-trimer structure for its first layer. The structures of Au and Ag are in fact quite similar and belong to the same class of structural models. However, small variation in the structural details gives rise to quite different observed STM images, as revealed in the theoretical calculations. The electronic charge density from bands around the Fermi level for the (√3 x √3) R30 degrees, Au/Si(111) surface also gives a good description of the images observed in STM experiments. First principles calculations are performed to study the electronic and structural properties of a series of Ti-base binary alloys TiFe, TiNi, TiPd, TiMo, and TiAu in the B2 structure

  13. Growth of In x Ga1-x Sb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments.

    Science.gov (United States)

    Inatomi, Y; Sakata, K; Arivanandhan, M; Rajesh, G; Nirmal Kumar, V; Koyama, T; Momose, Y; Ozawa, T; Okano, Y; Hayakawa, Y

    2015-01-01

    In x Ga 1- x Sb is an important material that has tunable properties in the infrared (IR) region and is suitable for IR-device applications. Since the quality of crystals relies on growth conditions, the growth process of alloy semiconductors can be examined better under microgravity (μG) conditions where convection is suppressed. To investigate the dissolution and growth process of In x Ga 1- x Sb alloy semiconductors via a sandwiched structure of GaSb(seed)/InSb/GaSb(feed) under normal and μG conditions. In x Ga 1- x Sb crystals were grown at the International Space Station (ISS) under μG conditions, and a similar experiment was conducted under terrestrial conditions (1G) using the vertical gradient freezing (VGF) method. The grown crystals were cut along the growth direction and its growth properties were studied. The indium composition and growth rate of grown crystals were calculated. The shape of the growth interface was nearly flat under μG, whereas under 1G, it was highly concave with the initial seed interface being nearly flat and having facets at the peripheries. The quality of the μG crystals was better than that of the 1G samples, as the etch pit density was low in the μG sample. The growth rate was higher under μG compared with 1G. Moreover, the growth started at the peripheries under 1G, whereas it started throughout the seed interface under μG. Kinetics played a dominant role under 1G. The suppressed convection under μG affected the dissolution and growth process of the In x Ga 1- x Sb alloy semiconductor.

  14. CuAu–ZnO–graphene nanocomposite: A novel graphene-based bimetallic alloy-semiconductor catalyst with its enhanced photocatalytic degradation performance

    International Nuclear Information System (INIS)

    Xie, Hong; Ye, Xiaoliang; Duan, Kaiyue; Xue, Muyin; Du, Yongling; Ye, Weichun; Wang, Chunming

    2015-01-01

    Graphical abstract: In this work, we have successfully synthesized a novel graphene-based bimetallic alloy-semiconductor catalyst: CuAu–ZnO–Gr nanocomposite, and which behaved an enhanced photocatalytic activity. - Highlights: • A bimetallic alloy-based catalyst: CuAu–ZnO–Gr is synthesized. • CuAu–ZnO–Gr behaves an enhanced photocatalytic activity. • The detailed explanation of photocatalytic mechanism of CuAu–ZnO–Gr. - Abstract: The bimetallic alloy CuAu nanoparticles (NPs) can produce more photogenerated electrons when compared with single metal Au NPs. Moreover, graphene (Gr) sheets can help the charge separation and slow down the recombination of the electron hole pairs of ZnO. Hence, a novel graphene-based bimetallic alloy-semiconductor catalyst: CuAu–ZnO–Gr nanocomposite is synthesized. Due to the synergistic effect among CuAu NPs, ZnO nanopyramids, and Gr sheets, CuAu–ZnO–Gr behaves an enhanced photocatalytic activity for the photocatalytic degradation of synthetic colorants methyl orange (MO), methylene blue (MB), indigotin (IN), sunset yellow (SY), and tartrazine (TT) under the simulated sunlight irradiation. Furthermore, the apparent rate constants (k app ) of MO, MB, IN, SY, and TT degradation are estimated respectively. In addition, the as-prepared CuAu–ZnO–Gr nanocomposite is characterized by X-ray diffraction, UV–vis spectrum, transmission electron microscopy, energy dispersive X-ray analysis (EDX), and EDX mapping. As a result of the facile synthesis route and the enhanced photocatalytic activity, this new material CuAu–ZnO–Gr can be a promising photocatalyst for the degradation of dyes

  15. CuAu–ZnO–graphene nanocomposite: A novel graphene-based bimetallic alloy-semiconductor catalyst with its enhanced photocatalytic degradation performance

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Hong [College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000 (China); Ye, Xiaoliang [College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000 (China); College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005 (China); Duan, Kaiyue; Xue, Muyin; Du, Yongling; Ye, Weichun [College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000 (China); Wang, Chunming, E-mail: wangcm@lzu.edu.cn [College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000 (China)

    2015-07-05

    Graphical abstract: In this work, we have successfully synthesized a novel graphene-based bimetallic alloy-semiconductor catalyst: CuAu–ZnO–Gr nanocomposite, and which behaved an enhanced photocatalytic activity. - Highlights: • A bimetallic alloy-based catalyst: CuAu–ZnO–Gr is synthesized. • CuAu–ZnO–Gr behaves an enhanced photocatalytic activity. • The detailed explanation of photocatalytic mechanism of CuAu–ZnO–Gr. - Abstract: The bimetallic alloy CuAu nanoparticles (NPs) can produce more photogenerated electrons when compared with single metal Au NPs. Moreover, graphene (Gr) sheets can help the charge separation and slow down the recombination of the electron hole pairs of ZnO. Hence, a novel graphene-based bimetallic alloy-semiconductor catalyst: CuAu–ZnO–Gr nanocomposite is synthesized. Due to the synergistic effect among CuAu NPs, ZnO nanopyramids, and Gr sheets, CuAu–ZnO–Gr behaves an enhanced photocatalytic activity for the photocatalytic degradation of synthetic colorants methyl orange (MO), methylene blue (MB), indigotin (IN), sunset yellow (SY), and tartrazine (TT) under the simulated sunlight irradiation. Furthermore, the apparent rate constants (k{sub app}) of MO, MB, IN, SY, and TT degradation are estimated respectively. In addition, the as-prepared CuAu–ZnO–Gr nanocomposite is characterized by X-ray diffraction, UV–vis spectrum, transmission electron microscopy, energy dispersive X-ray analysis (EDX), and EDX mapping. As a result of the facile synthesis route and the enhanced photocatalytic activity, this new material CuAu–ZnO–Gr can be a promising photocatalyst for the degradation of dyes.

  16. Thermoelectric neutron dosimetry: a short introduction

    International Nuclear Information System (INIS)

    Mathieu, F.; Meier, R.; Debrue, J.; Leonard, F.; Schubert, W.

    1977-01-01

    The paper gives a short introduction and state-of-the-art account of an unconventional, non destructive neutron dosimetry method based on monitoring the neutron fluence dependent changes of the thermoelectric properties of base metals and alloys. The basic principles are exposed and illustrated with experimental data obtained during an exploratory irradiation in the BR2 reactor

  17. Thermoelectric materials and devices made therewith

    International Nuclear Information System (INIS)

    Moore, D.E.

    1985-01-01

    The disclosed invention includes improved devices and materials for thermoelectric conversion, particularly for operation at temperatures of 300 0 C. and below. Disordered p-type semiconductor elements incorporate compound adjuvants of silver and lead to achieve enhanced ''figure of merit'' values and corresponding increased efficiencies of thermoelectric conversion. Similar results are obtained with disordered n-type elements by employing lowered selenium contents, preferably in combination with cuprous bromide. Improved conversion devices include powder pressed elements from one or both of these materials

  18. Thermoelectric Materials

    Science.gov (United States)

    Gao, Peng; Berkun, Isil; Schmidt, Robert D.; Luzenski, Matthew F.; Lu, Xu; Bordon Sarac, Patricia; Case, Eldon D.; Hogan, Timothy P.

    2014-06-01

    Mg2(Si,Sn) compounds are promising candidate low-cost, lightweight, nontoxic thermoelectric materials made from abundant elements and are suited for power generation applications in the intermediate temperature range of 600 K to 800 K. Knowledge on the transport and mechanical properties of Mg2(Si,Sn) compounds is essential to the design of Mg2(Si,Sn)-based thermoelectric devices. In this work, such materials were synthesized using the molten-salt sealing method and were powder processed, followed by pulsed electric sintering densification. A set of Mg2.08Si0.4- x Sn0.6Sb x (0 ≤ x ≤ 0.072) compounds were investigated, and a peak ZT of 1.50 was obtained at 716 K in Mg2.08Si0.364Sn0.6Sb0.036. The high ZT is attributed to a high electrical conductivity in these samples, possibly caused by a magnesium deficiency in the final product. The mechanical response of the material to stresses is a function of the elastic moduli. The temperature-dependent Young's modulus, shear modulus, bulk modulus, Poisson's ratio, acoustic wave speeds, and acoustic Debye temperature of the undoped Mg2(Si,Sn) compounds were measured using resonant ultrasound spectroscopy from 295 K to 603 K. In addition, the hardness and fracture toughness were measured at room temperature.

  19. Electronic Structure Properties and a Bonding Model of Thermoelectric Half-Heusler and Boride Phases

    Science.gov (United States)

    Simonson, Jack William

    be n-type semiconductors with band gaps ranging from 0.15 eV to 0.25 eV. These alloys exhibited thermoelectric power factors comparable with those of other potential boride thermoelectric materials reported in the literature. Furthermore, as a result of the procedure developed for precision synthesis of boron-rich intermetallics and the improved understanding of bonding trends, layered borides of several previously overlooked structure-types were synthesized and screened for superconductivity. Consequently, alloys of the MoB4 phase were discovered to be superconducting when doped with Nb or Ti. Electrical resistivity measurements of superconducting transitions between 6 and 8 K in these materials were confirmed via magnetic susceptibility measurements and x-ray diffraction. Structural measurements indicated opposite trends in lattice modification than those reported for the superconducting transition metal diborides.

  20. Review—Organic Materials for Thermoelectric Energy Generation

    KAUST Repository

    Cowen, Lewis M.; Atoyo, Jonathan; Carnie, Matthew J.; Baran, Derya; Schroeder, Bob C.

    2017-01-01

    Organic semiconductor materials have been promising alternatives to their inorganic counterparts in several electronic applications such as solar cells, light emitting diodes, field effect transistors as well as thermoelectric generators. Their low cost, light weight and flexibility make them appealing in future applications such as foldable electronics and wearable circuits using printing techniques. In this report, we present a mini-review on the organic materials that have been used for thermoelectric energy generation.

  1. Method of manufacturing a layer thermoelectric battery. Herstellungsverfahren fuer Schichtthermobatterien

    Energy Technology Data Exchange (ETDEWEB)

    Lidorenko, N.S.; Kolomoets, N.V.; Daschevsky, Z.M.; Granovsky, V.I.; Schemtschuschina, E.A.; Chernousov, L.N.; Schmidt, I.A.; Nikolaschina, L.A.; Gelfgat, D.M.; Sgibnev, I.V.

    1980-08-21

    A method of manufacturing a layer thermoelectric battery is described, whereby a film of a thermoelectric semiconductor material which is an n-type stoichiometric solid solution containing Bi2Te3 and Sb2Te3 is deposited on a substrate. Then heating is effected so that adjacent arms of the film are at different temperatures, some at a temperature of not above 300/sup 0/C, and others at a temperature of not less than 350/sup 0/C.

  2. Review—Organic Materials for Thermoelectric Energy Generation

    KAUST Repository

    Cowen, Lewis M.

    2017-01-29

    Organic semiconductor materials have been promising alternatives to their inorganic counterparts in several electronic applications such as solar cells, light emitting diodes, field effect transistors as well as thermoelectric generators. Their low cost, light weight and flexibility make them appealing in future applications such as foldable electronics and wearable circuits using printing techniques. In this report, we present a mini-review on the organic materials that have been used for thermoelectric energy generation.

  3. Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches

    Directory of Open Access Journals (Sweden)

    M. P. Polak

    2016-01-01

    Full Text Available Structural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the first principles in both zinc-blende and wurtzite structures. Performances of the finite difference (FD method and the density functional perturbation theory (DFPT are tested and compared. Both of these methods are applied to two different approaches of alloy simulation, a supercell of 16 and 32 atoms (for zinc-blende and wurtzite structures, resp. and the alchemical mixing (AM method, where the pseudopotentials are mixed in an appropriate way to form an alloy. All elastic properties, including the elastic tensors, elastic moduli, Poisson’s ratio, B/G, and relaxation coefficient, as well as lattice parameters are calculated using all said methods. Conclusions about the use of the approaches investigated in this paper and about their performance are drawn. In addition, in both crystal structures, the band gap is studied in the whole composition range using the MBJLDA functional. The band gap bowings are unusually high, which confirms earlier reports.

  4. Advanced thermoelectric materials and systems for automotive applications in the next millennium

    Energy Technology Data Exchange (ETDEWEB)

    Morelli, D T

    1997-07-01

    A combination of environmental, economic, and technological drivers has led to a reassessment of the potential for using thermoelectric devices in several automotive applications. In order for this technology to achieve its ultimate potential, new materials with enhanced thermoelectric properties are required. Experimental results on the fundamental physical properties of some new thermoelectric materials, including filled skutterudites and 1-1-1 intermetallic semiconductors, are presented.

  5. Thermoelectric generator

    International Nuclear Information System (INIS)

    Purdy, D.L.

    1978-01-01

    The main components of a thermoelectric generator are housed in an evacuated cylindrical vessel. In the middle of it there is the radioactive heat source, e.g. 90 Sr or 238 Pu, enclosed by a gamma radiation shield. This one is surrounded by a heat-insulating screen from getter material or indicidual sheets of titanium. In the bottom of the screen there are arranged several thermocouples on a circle. The thermocouples themselves are contained within casings sealed gas-tight and filled with an inert gas, e.g. argon. By separating the internal space of the generator vessel from the thermocouple casings, made of e.g. n- respectively p-doped lead telluride cylinders, for both the optimal gas state may be obtained. (DG) [de

  6. Mechanical Response of Thermoelectric Materials

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, Andrew A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Case, Eldon D. [Michigan State Univ., East Lansing, MI (United States)

    2015-05-01

    A sufficient mechanical response of thermoelectric materials (TEMats) to structural loadings is a prerequisite to the exploitation of any candidate TEMat's thermoelectric efficiency. If a TEMat is mechanically damaged or cracks from service-induced stresses, then its thermal and electrical functions can be compromised or even cease. Semiconductor TEMats tend to be quite brittle and have a high coefficient of thermal expansion; therefore, they can be quite susceptible to mechanical failure when subjected to operational thermal gradients. Because of this, sufficient mechanical response (vis-a-vis, mechanical properties) of any candidate TEMat must be achieved and sustained in the context of the service-induced stress state to which it is subjected. This report provides an overview of the mechanical responses of state-of-the-art TEMats; discusses the relevant properties that are associated with those responses and their measurement; and describes important, nonequilibrium phenomena that further complicate their use in thermoelectric devices. For reference purposes, the report also includes several appendixes that list published data on elastic properties and strengths of a variety of TEMats.

  7. Structural and electronic properties of Ga{sub 1-x}In{sub x} As{sub 1-y}N{sub y} quaternary semiconductor alloy on GaAs substrate

    Energy Technology Data Exchange (ETDEWEB)

    Aslan, Metin, E-mail: maslan@sakarya.edu.tr [Sakarya University, Art, Science Faculty, Department of Physics, Esentepe Campus, 54187 Sakarya (Turkey); Yalc Latin-Small-Letter-Dotless-I n, Battal G.; Uestuendag, Mehmet [Sakarya University, Art, Science Faculty, Department of Physics, Esentepe Campus, 54187 Sakarya (Turkey)

    2012-04-05

    Highlights: Black-Right-Pointing-Pointer In this study we used DFT in the frame of LDA approach to determine electronic and structural properties of GaInAsN alloy. Black-Right-Pointing-Pointer We calculated lattice parameter and band gap energy of binary (GaAs, InAs, and GaN), ternary (GaInAs, GaAsN) and quaternary (GaInAsN) semiconductor alloys. Black-Right-Pointing-Pointer We formulated lattice parameter of GaInAsN respect to In and N composition. Black-Right-Pointing-Pointer We investigated different In and N composition of GaInAsN/GaAs heterostructure for various device applications. - Abstract: We have presented structural and electronic properties of binary (GaAs, GaN and InAs), ternary (Ga{sub 1-x}In{sub x}As and GaAs{sub 1-y}N{sub y}) and quaternary (Ga{sub 1-x}In{sub x}As{sub 1-y}N{sub y}) semiconductor alloys by using a first-principles pseudopotential technique. The structural and electronic properties of Zinc-Blende phase of these materials have been calculated by using the local density approximation (LDA) of the density-functional theory (DFT). To obtain the lattice parameter and band gap energy of the (GaInAsN) quaternary semiconductor alloy we separately calculated the lattice constant and band gap energies of ternary semiconductor alloys, namely GaAsN and GaInAs. The calculated lattice constant, bulk modulus and the direct band gaps for studied semiconductors showed great parallelism with the previous available theoretical and experimental studies.

  8. Thermoelectric properties of n-type Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} fabricated by mechanical alloying and hot pressing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, H J; Choi, J S; Oh, T S; Hyun, D B

    1997-07-01

    Thermoelectric properties of polycrystalline Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} (0.05 {le} x {le} 0.25), fabricated by mechanical alloying and hot pressing, have been investigated. Formation of n-type Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}){sub 3} alloy powders was completed by mechanical alloying for 3 hours at ball-to-material ratio of 5:1, and processing time for Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} formation increased with Bi{sub 2}Se{sub 3} content x. Figure-of-merit of Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}) was markedly increased by hot pressing at temperatures above 450 C, and maximum value of 1.9 x 10{sup {minus}3}/K was obtained by hot pressing at 550 C. With addition of 0.015 wt% Bi as acceptor dopant, figure-of-merit of Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}){sub 3} was hot pressed at 550 C, could be improved to 2.1 x 10{sup {minus}3}/K. When Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} was hot pressed at 550 C, figure-of-merit increased from 1.14 x 10{sup {minus}3}/K to 1.92 x 10{sup {minus}3}/K with increasing Bi{sub 2}Se{sub 3} content x from 0.05 to 0.15, and then decreased to 1.30 x 10{sup {minus}3}/K for x = 0.25 composition.

  9. Improvement In The COP Of Thermoelectric Cooler

    Directory of Open Access Journals (Sweden)

    Jatin Patel

    2015-08-01

    Full Text Available This paper described the study for heat transfer through thermoelectric cooler TEC by use of multistage thermoelectric module. To satisfy the heat dissipation of modern electronic element thermal designers have to increase fin area and fan speed to improve its cooling capacity. However the increase of fin area is restricted by the space. Besides the increase of fan speed would induce noise which damages human health. So air cooling by fan is hardly to meet the requirement of modern electronic component. Recently thermoelectric cooler TEC is applied to electronic cooling with the advantages of small size quietness and reliability. A typical thermoelectric cooler consists of p-type and n-type semiconductor pellets connected electrically in series and sandwiched between two ceramic substrates. Whenever direct current passes through the circuit it causes temperature differential between TEC sides. As a result one face of TEC which is called cold side will be cooled while its opposite face which is called hot side is simultaneously heated. The main problem over the use of TEC is the limited COP and its thermal performance. But these can be eliminated by use of multistage thermoelectric cooler.

  10. Assessing the Thermal Conductivity of Cu2-xSe Alloys Undergoing a Phase Transition via the Simultaneous Measurement of Thermoelectric Parameters by a Harman-Based Setup

    Science.gov (United States)

    Vasilevskiy, D.; Keshavarz, M. K.; Simard, J.-M.; Masut, R. A.; Turenne, S.; Snyder, G. J.

    2018-01-01

    Some materials such as Cu2-xSe, Cu1.97Ag0.03Se, and SnSe have attracted attention by demonstrating a significant enhancement of their thermoelectric performance, which is associated with a phase transition. This phenomenon, observed in a limited temperature (T) interval, results in sharp changes of the Seebeck coefficient (S), the electrical resistivity (ρ), and the thermal conductivity (κ), which may render the correct evaluation of the dimensionless figure of merit (ZT) difficult. We report the thermoelectric properties of a polycrystalline Cu2-xSe sample which is known to undergo a phase transition near 410 K, containing a mixture of α- and β-phases at room temperature, as determined by x-ray diffraction measurements. We have used a Harman-based setup (TEMTE Inc.), which assures the direct measurement of ZT at all temperatures, including the phase transition region. This approach ensures that κ(T) is determined under steady-state conditions at any given temperature, including points arbitrarily close to the transition temperature which cannot be guaranteed by previously used techniques such as laser flash. We have observed a sharp maximum for κ(T) near 410 K, similar to the reported specific heat variation, with a ZT peak value of 0.2 at 400 K. The expected gain in ZT related to the phase transition is reduced because the increase in S is counterbalanced by the increase in κ(T). Thus, our detailed assessment of the temperature variation of the individual thermoelectric properties accurately evaluates the performance enhancement associated to a structural phase transition and helps to elucidate this complex phenomenon.

  11. Assessing the Thermal Conductivity of Cu2-xSe Alloys Undergoing a Phase Transition via the Simultaneous Measurement of Thermoelectric Parameters by a Harman-Based Setup

    Science.gov (United States)

    Vasilevskiy, D.; Keshavarz, M. K.; Simard, J.-M.; Masut, R. A.; Turenne, S.; Snyder, G. J.

    2018-06-01

    Some materials such as Cu2-xSe, Cu1.97Ag0.03Se, and SnSe have attracted attention by demonstrating a significant enhancement of their thermoelectric performance, which is associated with a phase transition. This phenomenon, observed in a limited temperature ( T) interval, results in sharp changes of the Seebeck coefficient ( S), the electrical resistivity ( ρ), and the thermal conductivity ( κ), which may render the correct evaluation of the dimensionless figure of merit (ZT) difficult. We report the thermoelectric properties of a polycrystalline Cu2-xSe sample which is known to undergo a phase transition near 410 K, containing a mixture of α- and β-phases at room temperature, as determined by x-ray diffraction measurements. We have used a Harman-based setup (TEMTE Inc.), which assures the direct measurement of ZT at all temperatures, including the phase transition region. This approach ensures that κ( T) is determined under steady-state conditions at any given temperature, including points arbitrarily close to the transition temperature which cannot be guaranteed by previously used techniques such as laser flash. We have observed a sharp maximum for κ( T) near 410 K, similar to the reported specific heat variation, with a ZT peak value of 0.2 at 400 K. The expected gain in ZT related to the phase transition is reduced because the increase in S is counterbalanced by the increase in κ( T). Thus, our detailed assessment of the temperature variation of the individual thermoelectric properties accurately evaluates the performance enhancement associated to a structural phase transition and helps to elucidate this complex phenomenon.

  12. Epitaxial Growth, Surface, and Electronic Properties of Unconventional Semiconductors: RE-V/III-V Nanocomposites and Semiconducting Half Heusler Alloys

    Science.gov (United States)

    2014-09-01

    10.1103/PhysRevLett.45.494. [2] D.C. Tsui, H.L. Stormer , and A.C. Gossard. Two-dimensional magnetotransport in the extreme quantum limit. Phys. Rev. Lett...5] R. Dingle, H. L. Stormer , A. C. Gossard, and W. Wiegmann. Electron mobil- ities in modulation-doped semiconductor heterojunction superlattices

  13. Influence of hydrostatic pressure on nuclear radiation detector's properties based on semiconductor alloy CdZnTe

    International Nuclear Information System (INIS)

    Kutnij, V.E.; Kutnij, D.V.; Rybka, A.V.; Nakonechnyj, D.V.; Babun, A.V.

    2003-01-01

    The influence of hydrostatic pressure on properties of CdZnTe semiconductor detectors (Cd-50,Zn-2,Te-48 mas.%, 5 centre dot 5 centre dot 2 mm) was investigated. Were considered different types of hydrostatic treatment at 100 MPa, second hydrostatic treatment at 100 MPa and 200 MPa. Hydrostatic pressure influence on detectors electric resistance, J-V characteristics and spectrometric parameters was determined

  14. Thermoelectric materials having porosity

    Science.gov (United States)

    Heremans, Joseph P.; Jaworski, Christopher M.; Jovovic, Vladimir; Harris, Fred

    2014-08-05

    A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi.sub.1-xSb.sub.x).sub.u(Te.sub.1-ySe.sub.y).sub.w, wherein 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 1.8.ltoreq.u.ltoreq.2.2, 2.8.ltoreq.w.ltoreq.3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.

  15. Effects of Rh on the thermoelectric performance of the p-type Zr0.5Hf0.5Co1-xRhxSb0.99Sn0.01 half-Heusler alloys

    International Nuclear Information System (INIS)

    Maji, Pramathesh; Takas, Nathan J.; Misra, Dinesh K.; Gabrisch, Heike; Stokes, Kevin; Poudeu, Pierre F.P.

    2010-01-01

    We show that Rh substitution at the Co site in Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 (0≤x≤1) half-Heusler alloys strongly reduces the thermal conductivity with a simultaneous, significant improvement of the power factor of the materials. Thermoelectric properties of hot-pressed pellets of several compositions with various Rh concentrations were investigated in the temperature range from 300 to 775 K. The Rh 'free' composition shows n-type conduction, while Rh substitution at the Co site drives the system to p-type semiconducting behavior. The lattice thermal conductivity of Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 alloys rapidly decreased with increasing Rh concentration and lattice thermal conductivity as low as 3.7 W/m*K was obtained at 300 K for Zr 0.5 Hf 0.5 RhSb 0.99 Sn 0.01 . The drastic reduction of the lattice thermal conductivity is attributed to mass fluctuation induced by the Rh substitution at the Co site, as well as enhanced phonon scattering at grain boundaries due to the small grain size of the synthesized materials. - Graphical abstract: Significant reduction of the lattice thermal conductivity with increasing Rh concentration in the p-type Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 half-Heusler materials prepared by solid state reaction at 1173 K.

  16. Low cost thermoelectric module

    Energy Technology Data Exchange (ETDEWEB)

    Kumpeerapun, T.; Hirunlabh, J. [King Mongkut Univ. of Technology, Bangkok (Thailand); Zeghmati, B. [Perpignan Univ., Perpignan (France). Faculty of Sciences; Scherrer, H.; Dauscher, A.; Weber, S.; Jahed, H.M.; Lernoir, B.; Kosalathip, V. [Ecole des Mines, Nancy (France). Laboratoire de Physique des Materiaux; Khedari, J. [South-East Asia Univ., Bangkok (Thailand). Faculty of Engineering

    2006-07-01

    The properties of a bismuth-telluride-antimony (Bi{sub x}Sb{sub 2-8}Te{sub 3}) polycrystalline thermoelectric material prepared using a novel melting and hot pressing process were investigated. The aim of the study was to synthesize the materials without the need for doping. Materials were weighed and placed in a quartz tube, which was sealed under vacuum and heated in a rocking furnace from room temperature to 750 degrees C over a period of 1 hour. Temperatures were maintained at 750 degrees C for a further 2 hours. The sample was then removed from the furnace and suddenly quenched in water. The ingot was then crushed into a powder using an agate mortar and sieved. Samples exhibiting a cylindrical shape were reserved. Samples were then examined using scanning electron microscopy (SEM) to determine their morphology and homogeneity. A sample pellet was then prepared for thermal conductivity measurements at room temperature. the pellet was nickel-plated on both sides and stacked between circular copper disks with thermocouples. Data were collected when the system reached thermal equilibrium. The Seebeck coefficient was measured by applying a small temperature difference. Results showed that the process effectively transformed the base materials into an alloy. It was concluded that the hot pressing successfully synthesized the materials. 6 refs., 1 tab., 6 figs.

  17. Quasi-two-dimensional thermoelectricity in SnSe

    Science.gov (United States)

    Tayari, V.; Senkovskiy, B. V.; Rybkovskiy, D.; Ehlen, N.; Fedorov, A.; Chen, C.-Y.; Avila, J.; Asensio, M.; Perucchi, A.; di Pietro, P.; Yashina, L.; Fakih, I.; Hemsworth, N.; Petrescu, M.; Gervais, G.; Grüneis, A.; Szkopek, T.

    2018-01-01

    Stannous selenide is a layered semiconductor that is a polar analog of black phosphorus and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle-resolved photoemission spectroscopy, optical reflection spectroscopy, and magnetotransport measurements reveal a multiple-valley valence-band structure and a quasi-two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250 cm2/V s at T =1.3 K . SnSe is thus found to be a high-quality quasi-two-dimensional semiconductor ideal for thermoelectric applications.

  18. Semiconductor-metal transitions in liquid In100-xSex alloys: A concentration-induced transition

    International Nuclear Information System (INIS)

    Ferlat, G.; San Miguel, A.; Xu, H.; Aouizerat, A.; Blase, X.; Zuniga, J.; Munoz-Sanjose, V.

    2004-01-01

    The electronic and structural properties of In 100-x Se x liquid alloys close to their melting points have been investigated by combining x-ray-absorption experiments with ab initio molecular-dynamics simulations. Extended x-ray-absorption fine-structure data have been acquired at both the In and Se K edges in a large concentration range (x=20% to x=50% of Se content). Ab initio molecular-dynamics simulations have been carried out at the two most extreme concentrations explored experimentally. Liquid InSe is found to retain a semiconducting behavior which results from a low-dimensional structure, reminiscent of that of the ambient solid phase, characterized by strong In-Se interactions within tetrahedral units. On the other side, the In 80 Se 20 liquid alloy shows a metalliclike behavior which is correlated to a more dense-packed structure

  19. Energy gaps, effective masses and ionicity of AlxGa1-xSb ternary semiconductor alloys

    Science.gov (United States)

    Bouarissa, N.; Boucenna, M.; Saib, S.; Siddiqui, S. A.

    2017-12-01

    A pseudopotential calculation of the electronic structure of AlxGa1-xSb ternary alloys in the zinc-blende structure has been performed. The compositional dependence of energy gaps, electron and heavy hole effective masses and ionicity of the material system of interest have been examined and discussed. Special attention has been given to the effect of the alloy disorder on the direct (Γ-Γ) bandgap energy. It is found that all features of interest vary monotonically with increasing the Al concentration x. Besides, bandgap bowing parameters and extent of the direct-to-indirect bandgap transition have been determined. Our findings agree generally well with the data reported in the literature. Trends in ionicity are found to be consistent with the Phillips ionicity scale.

  20. Thermoelectrics and its energy harvesting

    National Research Council Canada - National Science Library

    Rowe, David Michael

    2012-01-01

    .... It details the latest techniques for the preparation of thermoelectric materials employed in energy harvesting, together with advances in the thermoelectric characterisation of nanoscale material...

  1. Introduction to thermoelectricity

    CERN Document Server

    Goldsmid, H Julian

    2010-01-01

    Introduction to Thermoelectricity is the latest work by Professor Julian Goldsmid drawing on his 55 years experience in the field. The theory of the thermoelectric and related phenomena is presented in sufficient detail to enable researchers to understand their observations and develop improved thermoelectric materials. The methods for the selection of materials and their improvement are discussed. Thermoelectric materials for use in refrigeration and electrical generation are reviewed. Experimental techniques for the measurement of properties and for the production of thermoelements are described. Special emphasis is placed on nanotechnology which promises to yield great improvements in the efficiency of thermoelectric devices. Chapters are also devoted to transverse thermoelectric effects and thermionic energy conversion, both techniques offering the promise of important applications in the future.

  2. Thermoelectricity in liquid crystals

    Science.gov (United States)

    Mohd Said, Suhana; Nordin, Abdul Rahman; Abdullah, Norbani; Balamurugan, S.

    2015-09-01

    The thermoelectric effect, also known as the Seebeck effect, describes the conversion of a temperature gradient into electricity. A Figure of Merit (ZT) is used to describe the thermoelectric ability of a material. It is directly dependent on its Seebeck coefficient and electrical conductivity, and inversely dependent on its thermal conductivity. There is usually a compromise between these parameters, which limit the performance of thermoelectric materials. The current achievement for ZT~2.2 falls short of the expected threshold of ZT=3 to allow its viability in commercial applications. In recent times, advances in organic thermoelectrics been significant, improving by over 3 orders of magnitude over a period of about 10 years. Liquid crystals are newly investigated as candidate thermoelectric materials, given their low thermal conductivity, inherent ordering, and in some cases, reasonable electrical conductivity. In this work the thermoelectric behaviour of a discotic liquid crystal, is discussed. The DLC was filled into cells coated with a charge injector, and an alignment of the columnar axis perpendicular to the substrate was allowed to form. This thermoelectric behavior can be correlated to the order-disorder transition. A reasonable thermoelectric power in the liquid crystal temperature regime was noted. In summary, thermoelectric liquid crystals may have the potential to be utilised in flexible devices, as a standalone power source.

  3. Thermoelectric Effects under Adiabatic Conditions

    Directory of Open Access Journals (Sweden)

    George Levy

    2013-10-01

    Full Text Available This paper investigates not fully explained voltage offsets observed by several researchers during the measurement of the Seebeck coefficient of high Z materials. These offsets, traditionally attributed to faulty laboratory procedures, have proven to have an irreducible component that cannot be fully eliminated in spite of careful laboratory procedures. In fact, these offsets are commonly observed and routinely subtracted out of commercially available Seebeck measurement systems. This paper offers a possible explanation based on the spontaneous formation of an adiabatic temperature gradient in the presence of a force field. The diffusion-diffusion heat transport mechanism is formulated and applied to predict two new thermoelectric effects. The first is the existence of a temperature gradient across a potential barrier in a semiconductor and the second is the Onsager reciprocal of the first, that is, the presence of a measureable voltage that arises across a junction when the temperature gradient is forced to zero by a thermal clamp. Suggested future research includes strategies for utilizing the new thermoelectric effects.

  4. Grain boundary engineering with nano-scale InSb producing high performance InxCeyCo4Sb12+z skutterudite thermoelectrics

    Directory of Open Access Journals (Sweden)

    Han Li

    2017-12-01

    Full Text Available Thermoelectric semiconductors based on CoSb3 hold the best promise for recovering industrial or automotive waste heat because of their high efficiency and relatively abundant, lead-free constituent elements. However, higher efficiency is needed before thermoelectrics reach economic viability for widespread use. In this study, n-type InxCeyCo4Sb12+z skutterudites with high thermoelectric performance are produced by combining several phonon scattering mechanisms in a panoscopic synthesis. Using melt spinning followed by spark plasma sintering (MS-SPS, bulk InxCeyCo4Sb12+z alloys are formed with grain boundaries decorated with nano-phase of InSb. The skutterudite matrix has grains on a scale of 100–200 nm and the InSb nano-phase with a typical size of 5–15 nm is evenly dispersed at the grain boundaries of the skutterudite matrix. Coupled with the presence of defects on the Sb sublattice, this multi-scale nanometer structure is exceptionally effective in scattering phonons and, therefore, InxCeyCo4Sb12/InSb nano-composites have very low lattice thermal conductivity and high zT values reaching in excess of 1.5 at 800 K.

  5. Nano-Micro Materials Enabled Thermoelectricity From Window Glasses

    KAUST Repository

    Inayat, Salman Bin

    2012-11-03

    With growing world population and decreasing fossil fuel reserves we need to explore and utilize variety of renewable and clean energy sources to meet the imminent challenge of energy crisis. Solar energy is considered as the leading promising alternate energy source with the pertinent challenge of off sunshine period and uneven worldwide distribution of usable sun light. Although thermoelectricity is considered as a reasonable energy harvester from wasted heat, its mass scale usage is yet to be developed. By transforming window glasses into generators of thermoelectricity, this doctoral work explores engineering aspects of using the temperature gradient between the hot outdoor heated by the sun and the relatively cold indoor of a building for mass scale energy generation. In order to utilize the two counter temperature environments simultaneously, variety of techniques, including: a) insertion of basic metals like copper and nickel wire, b) sputtering of thermoelectric films on side walls of individual glass strips to form the thickness depth of the glass on subsequent curing of the strips, and c) embedding nano-manufactured thermoelectric pillars, have been implemented for innovative integration of thermoelectric materials into window glasses. The practical demonstration of thermoelectric windows has been validated using a finite element model to predict the behavior of thermoelectric window under variety of varying conditions. MEMS based characterization platform has been fabricated for thermoelectric characterization of thin films employing van der Pauw and four probe modules. Enhancement of thermoelectric properties of the nano- manufactured pillars due to nano-structuring, achieved through mechanical alloying of micro-sized thermoelectric powders, has been explored. Modulation of thermoelectric properties of the nano-structured thermoelectric pillars by addition of sulfur to nano-powder matrix has also been investigated in detail. Using the best possible p

  6. Thermoelectric properties by high temperature annealing

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Kumar, Shankar (Inventor); Lee, Hohyun (Inventor)

    2009-01-01

    The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

  7. Effect of spark plasma sintering conditions on the thermoelectric properties of (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Sang-Soon [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Ju-Heon [High Temp. Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Kwon, Beomjin; Kim, Seong Keun [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Park, Hyung-Ho [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Ki-Suk; Baik, Jeong Min [School of Materials and Science Engineering, UNIST, Ulsan 689-798 (Korea, Republic of); KIST-UNIST Ulsan Center for Convergent Materials, UNIST, Ulsan 689-798 (Korea, Republic of); Choi, Won Jun [Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Kim, Dong-Ik [High Temp. Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Hyun, Dow-Bin; Kim, Jin-Sang [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Baek, Seung-Hyub, E-mail: shbaek77@kist.re.kr [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); KIST-UNIST Ulsan Center for Convergent Materials, UNIST, Ulsan 689-798 (Korea, Republic of); Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of)

    2016-09-05

    As a field-assisted technique, spark plasma sintering (SPS) enables densification of specimens in a very short period of time compared to other sintering techniques. For high performance thermoelectric material synthesis, SPS is widely used to fabricate nanograin-structured thermoelectric materials by rapidly densifying the nanopowders suppressing grain growth. However, the microstructural evolution behavior of thermoelectric materials by SPS, another important process during sintering, has been rarely studied. Here, we explore SPS as a tool to control the microstructure by long-time SPS. Using p-type (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} thermoelectric materials as a model system, we systematically vary SPS temperature and time to understand the correlations between SPS conditions, microstructural evolution, and the thermoelectric properties. Our results show that the relatively low eutectic temperature (∼420 °C) and the existence of volatile tellurium (Te) are critical factors to determine both microstructure and thermoelectric property. In the liquid-phase sintering regime, rapid evaporation of Te leads to a strong dependence of thermoelectric property on SPS time. On the other hand, in the solid-phase sintering regime, there is a weak dependence on SPS time. The optimum thermoelectric figure-of-merit (Z) of 2.93 × 10{sup −3}/K is achieved by SPS at 500 °C for 30 min. Our results will provide an insight on the optimization of SPS conditions for materials containing volatile elements with low eutectic temperature. - Highlights: • Spark plasma sintering (SPS) is used to synthesize the thermoelectric (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3}. • Liquid phase and volatile element are a key for the microstructure and thermoelectric property. • Thermoelectric figure-of-merit of 2.9 × 10{sup −3}/K is achieved at 500 °C for 30 min.

  8. Cross-plane Thermoelectric Transport in p-type La0.67Sr0.33MnO3/LaMnO3 Oxide Metal/Semiconductor Superlattices

    Science.gov (United States)

    2013-12-07

    fre- quency of 5 Hz, and temperature maintained at 750 C measured using an infrared pyrometer (STO emissivity of 0.8). The target was mechanically...thermoelectric transport Thermal conductivity of LSMO/LMO superlattices was measured using a photo- acoustic (PA) technique.18,19 The high resistivity...multilayer material,” J. Appl. Phys. 86(7), 3953 (1999). 19X. W. Wang, H. P. Hu, and X. F. Xu, “Photo- acoustic measurement of thermal conductivity of

  9. Thermoelectricity: materials and applications

    International Nuclear Information System (INIS)

    Elberg, S.; Mathonnet, P.

    1975-01-01

    After a brief recall of the basic principles of thermoelectricity, the essential characteristics intervening in the different thermoelectric devices operating modes are defined. Properties of the materials the most used nowadays and performances of the apparatus that they allow to realize are indicated. Advantages and drawbacks of the principal applications in the form of electrical generators, refrigerators and heat pumps are pointed out [fr

  10. Modelling of thermoelectric materials

    DEFF Research Database (Denmark)

    Bjerg, Lasse

    In order to discover new good thermoelectric materials, there are essentially two ways. One way is to go to the laboratory, synthesise a new material, and measure the thermoelectric properties. The amount of compounds, which can be investigated this way is limited because the process is time...... consuming. Another approach is to model the thermoelectric properties of a material on a computer. Several crystal structures can be investigated this way without use of much man power. I have chosen the latter approach. Using density functional theory I am able to calculate the band structure of a material....... This band structure I can then use to calculate the thermoelectric properties of the material. With these results I have investigated several materials and found the optimum theoretical doping concentration. If materials with these doping concentrations be synthesised, considerably better thermoelectric...

  11. The question about increasing of thermoelectrical Q and percent of the yield of the semiconductor material on the basis of chalcogenides of the bismuth and antimony under conditions of experimental-industrial production

    International Nuclear Information System (INIS)

    Magerramov, A.A.; Barkhalov, B.S.

    2005-01-01

    Full text : Different methods of the receiving of monocrystalline ingots of the semiconductor materials for thermo electrical inverter of energy have been considered. On the basis of the analyses of theoretical and experimental data generated series of recommendations, directed to increase thermo electrical Q receiving from thermo electrical materials and increasing percent of yield of semiconductor materials on the basis of chalcogenides of the bismuth and antimony on the basis of industrial production

  12. Thermoelectric properties of low-dimensional clathrates from first principles

    Science.gov (United States)

    Kasinathan, Deepa; Rosner, Helge

    2011-03-01

    Type-I inorganic clathrates are host-guest structures with the guest atoms trapped in the framework of the host structure. From a thermoelectric point of view, they are interesting because they are semiconductors with adjustable bandgaps. Investigations in the past decade have shown that type-I clathrates X8 Ga 16 Ge 30 (X = Ba, Sr, Eu) may have the unusual property of ``phonon glass-electron crystal'' for good thermoelectric materials. Among the known clathrates, Ba 8 Ga 16 Ge 30 has the highest figure of merit (ZT~1). To enable a more widespread usage of thermoelectric technology power generation and heating/cooling applications, ZT of at least 2-3 is required. Two different research approaches have been proposed for developing next generation thermoelectric materials: one investigating new families of advanced bulk materials, and the other studying low-dimensional materials. In our work, we concentrate on understanding the thermoelectric properties of the nanostructured Ba-based clathrates. We use semi-classical Boltzmann transport equations to calculate the various thermoelectric properties as a function of reduced dimensions. We observe that there exists a delicate balance between the electrical conductivity and the electronic part of the thermal conductivity in reduced dimensions. Insights from these results can directly be used to control particle size in nanostructuring experiments.

  13. The thermoelectric process

    Energy Technology Data Exchange (ETDEWEB)

    Vining, C B

    1997-07-01

    The efficiency of thermoelectric technology today is limited by the properties of available thermoelectric materials and a wide variety of new approaches to developing better materials have recently been suggested. The key goal is to find a material with a large ZT, the dimensionless thermoelectric figure of merit. However, if an analogy is drawn between thermoelectric technology and gas-cycle engines then selecting different materials for the thermoelements is analogous to selecting a different working gas for the mechanical engine. And an attempt to improve ZT is analogous to an attempt to improve certain thermodynamic properties of the working-gas. An alternative approach is to focus on the thermoelectric process itself (rather than on ZT), which is analogous to considering alternate cycles such as Stirling vs. Brayton vs. Rankine etc., rather than merely considering alternative gases. Focusing on the process is a radically different approach compared to previous studies focusing on ZT. Aspects of the thermoelectric process and alternative approaches to efficient thermoelectric conversion are discussed.

  14. Decoupling interrelated parameters for designing high performance thermoelectric materials.

    Science.gov (United States)

    Xiao, Chong; Li, Zhou; Li, Kun; Huang, Pengcheng; Xie, Yi

    2014-04-15

    The world's supply of fossil fuels is quickly being exhausted, and the impact of their overuse is contributing to both climate change and global political unrest. In order to help solve these escalating problems, scientists must find a way to either replace combustion engines or reduce their use. Thermoelectric materials have attracted widespread research interest because of their potential applications as clean and renewable energy sources. They are reliable, lightweight, robust, and environmentally friendly and can reversibly convert between heat and electricity. However, after decades of development, the energy conversion efficiency of thermoelectric devices has been hovering around 10%. This is far below the theoretical predictions, mainly due to the interdependence and coupling between electrical and thermal parameters, which are strongly interrelated through the electronic structure of the materials. Therefore, any strategy that balances or decouples these parameters, in addition to optimizing the materials' intrinsic electronic structure, should be critical to the development of thermoelectric technology. In this Account, we discuss our recently developed strategies to decouple thermoelectric parameters for the synergistic optimization of electrical and thermal transport. We first highlight the phase transition, which is accompanied by an abrupt change of electrical transport, such as with a metal-insulator and semiconductor-superionic conductor transition. This should be a universal and effective strategy to optimize the thermoelectric performance, which takes advantage of modulated electronic structure and critical scattering across phase transitions to decouple the power factor and thermal conductivity. We propose that solid-solution homojunction nanoplates with disordered lattices are promising thermoelectric materials to meet the "phonon glass electron crystal" approach. The formation of a solid solution, coupled with homojunctions, allows for

  15. Influence of Ga-doping on the thermoelectric properties of Bi(2−xGaxTe2.7Se0.3 alloy

    Directory of Open Access Journals (Sweden)

    Xingkai Duan

    2015-02-01

    Full Text Available Bi(2−xGaxTe2.7Se0.3 (x=0, 0.04, 0.08, 0.12 alloys were fabricated by vacuum melting and hot pressing technique. The structure of the samples was evaluated by means of X-ray diffraction. The peak shift toward higher angle can be observed by Ga-doping. The effects of Ga substitution for Bi on the electrical and thermal transport properties were investigated in the temperature range of 300–500 K. The power factor values of the Ga-doped samples are obviously improved in the temperature range of 300–440 K. Among all the samples, the Bi(2−xGaxTe2.7Se0.3 (x=0.04 sample showed the lowest thermal conductivity near room temperature and the maximum ZT value reached 0.82 at 400 K.

  16. Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te) x -(Bi0.5Sb1.5Te3)1-x (x=0-1.0) alloys prepared by spark plasma sintering

    International Nuclear Information System (INIS)

    Cui, J.L.; Xue, H.F.; Xiu, W.J.; Jiang, L.; Ying, P.Z.

    2006-01-01

    In this paper, pseudo-binary (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys were prepared using spark plasma sintering technique, and the composition-dependent thermoelectric properties were evaluated. Electrical conductivities range from 7.9x10 4 to 15.6x10 4 Ω -1 m -1 at temperatures of 507 and 318 K, respectively, being about 3.0 and 8.5 times those of Bi 0.5 Sb 1.5 Te 3 alloy at the corresponding temperatures. The optimal dimensionless figure of merit (ZT) of the sample with molar fraction x=0.025 reaches 1.1 at 478 K, whereas that of the ternary Bi 0.5 Sb 1.5 Te 3 alloy is 0.58 near room temperature. The results also reveal that a direct introduction of Ag 0.365 Sb 0.558 Te in the Bi-Sb-Te system is much more effective to the property improvement than naturally precipitated Ag 0.365 Sb 0.558 Te in the Ag-doped Ag-Bi-Sb-Te system. - Graphical abstract: The temperature dependence of the dimensionless thermoelectric figure of merit ZT for different (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys prepared by spark plasma sintering

  17. P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

    DEFF Research Database (Denmark)

    Febvrier, Arnaud le; Van Nong, Ngo; Abadias, Gregory

    2018-01-01

    Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over......-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale....

  18. Design Optimization of a Thermoelectric Cooling Module Using Finite Element Simulations

    Science.gov (United States)

    Abid, Muhammad; Somdalen, Ragnar; Rodrigo, Marina Sancho

    2018-05-01

    The thermoelectric industry is concerned about the size reduction, cooling performance and, ultimately, the production cost of thermoelectric modules. Optimization of the size and performance of a commercially available thermoelectric cooling module is considered using finite element simulations. Numerical simulations are performed on eight different three-dimensional geometries of a single thermocouple, and the results are further extended for a whole module as well. The maximum temperature rise at the hot and cold sides of a thermocouple is determined by altering its height and cross-sectional area. The influence of the soldering layer is analyzed numerically using temperature dependent and temperature independent thermoelectric properties of the solder material and the semiconductor pellets. Experiments are conducted to test the cooling performance of the thermoelectric module and the results are compared with the results obtained through simulations. Finally, cooling rate and maximum coefficient of performance (COPmax) are computed using convective and non-convective boundary conditions.

  19. Solar thermoelectric generator

    Science.gov (United States)

    Toberer, Eric S.; Baranowski, Lauryn L.; Warren, Emily L.

    2016-05-03

    Solar thermoelectric generators (STEGs) are solid state heat engines that generate electricity from concentrated sunlight. A novel detailed balance model for STEGs is provided and applied to both state-of-the-art and idealized materials. STEGs can produce electricity by using sunlight to heat one side of a thermoelectric generator. While concentrated sunlight can be used to achieve extremely high temperatures (and thus improved generator efficiency), the solar absorber also emits a significant amount of black body radiation. This emitted light is the dominant loss mechanism in these generators. In this invention, we propose a solution to this problem that eliminates virtually all of the emitted black body radiation. This enables solar thermoelectric generators to operate at higher efficiency and achieve said efficient with lower levels of optical concentration. The solution is suitable for both single and dual axis solar thermoelectric generators.

  20. Thermoelectric transport in superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Reinecke, T L; Broido, D A

    1997-07-01

    The thermoelectric transport properties of superlattices have been studied using an exact solution of the Boltzmann equation. The role of heat transport along the barrier layers, of carrier tunneling through the barriers, of valley degeneracy and of the well width and energy dependences of the carrier-phonon scattering rates on the thermoelectric figure of merit are given. Calculations are given for Bi{sub 2}Te{sub 3} and for PbTe, and the results of recent experiments are discussed.

  1. Universal Majorana thermoelectric noise

    Science.gov (United States)

    Smirnov, Sergey

    2018-04-01

    Thermoelectric phenomena resulting from an interplay between particle flows induced by electric fields and temperature inhomogeneities are extremely insightful as a tool providing substantial knowledge about the microscopic structure of a given system. By tuning, e.g., parameters of a nanoscopic system coupled via tunneling mechanisms to two contacts, one may achieve various situations where the electric current induced by an external bias voltage competes with the electric current excited by the temperature difference of the two contacts. Even more exciting physics emerges when the system's electronic degrees freedom split to form Majorana fermions which make the thermoelectric dynamics universal. Here, we propose revealing these unique universal signatures of Majorana fermions in strongly nonequilibrium quantum dots via noise of the thermoelectric transport beyond linear response. It is demonstrated that whereas mean thermoelectric quantities are only universal at large-bias voltages, the noise of the electric current excited by an external bias voltage and the temperature difference of the contacts is universal at any bias voltage. We provide truly universal, i.e., independent of the system's parameters, thermoelectric ratios between nonlinear response coefficients of the noise and mean current at large-bias voltages where experiments may easily be performed to uniquely detect these truly universal Majorana thermoelectric signatures.

  2. A Review of SnSe: Growth and Thermoelectric Properties

    Science.gov (United States)

    Nguyen, Van Quang; Kim, Jungdae; Cho, Sunglae

    2018-04-01

    SnSe is a 2D semiconductor with an indirect energy gap of 0.86 - 1 eV; it is widely used in solar cell, optoelectronics, and electronic device applications. Recently, SnSe has been considered as a robust candidate for energy conversion applications due to its high thermoelectric performance ( ZT = 2.6 in p-type and 2.2 in n-type), which is assigned mainly to its anhamornic bonding leading to an ultralow thermal conductivity. In this review, we first discuss the crystalline and electronic structures of SnSe and the source of its p-type characteristic. Then, some typical single crystal and polycrystal growth techniques, as well as an epitaxial thin film growth technique, are outlined. The reported thermoelectric properties of SnSe grown by using each technique are also reviewed. Finally, we will describe some remaining issues concerning the use of SnSe for thermoelectric applications.

  3. From phase-change materials to thermoelectrics?

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, Matthias N.; Rosenthal, Tobias; Oeckler, Oliver [Dept. of Chemistry, Ludwig Maximilian Univ. Munich (Germany); Stiewe, Christian [German Aerospace Center, Cologne (Germany)

    2010-07-01

    Metastable tellurides play an important role as phase-change materials in data storage media and non-volatile RAM devices. The corresponding crystalline phases with very simple basic structures are not stable as bulk materials at ambient conditions, however, for a broad range of compositions they represent stable high-temperature phases. In the system Ge/Sb/Te, rocksalt-type high-temperature phases are characterized by a large number of vacancies randomly distributed over the cation position, which order as 2D vacancy layers upon cooling. Short-range order in quenched samples produces pronounced nanostructures by the formation of twin domains and finite intersecting vacancy layers. As phase-change materials are usually semimetals or small-bandgap semiconductors and efficient data storage requires low thermal conductivity, bulk materials with similar compositions and properties can be expected to exhibit promising thermoelectric characteristics. Nanostructuring by phase transitions that involve partial vacancy ordering may enhance the efficiency of such thermoelectrics. We have shown that germanium antimony tellurides with compositions close to those used as phase-change materials in rewritable Blu-Ray Discs, e.g. (GeTe){sub 12}Sb{sub 2}Te{sub 3}, exhibit thermoelectric figures of merit of up to ZT = 1.3 at 450 C if a nanodomain structure is induced by rapidly quenching the cubic high-temperature phase. Structural changes have been elucidated by X-ray diffraction and high-resolution electron microscopy. (orig.)

  4. The effect of doping on thermoelectric performance of p-type SnSe: Promising thermoelectric material

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Niraj Kumar; Bathula, Sivaiah; Gahtori, Bhasker [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Tyagi, Kriti [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Acdemy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (NPL) Campus, New Delhi (India); Haranath, D. [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

    2016-05-25

    Tin selenide (SnSe) based thermoelectric materials are being explored for making inexpensive and efficient thermoelectric devices with improved thermoelectric efficiency. As both Sn and Se are earth abundant and relatively inexpensive and these alloys do not involve toxic materials, such as lead and expensive tellurium. Hence, in the present study, we have synthesized SnSe doped with 2 at% of aluminium (Al), lead (Pb), indium (In) and copper (Cu) individually, which is not reported in literature. Out of these, Cu doped SnSe resulted in enhancement of figure-of-merit (zT) of ∼0.7 ± 0.02 at 773 K, synthesized employing conventional fusion method followed by spark plasma sintering. This enhancement in zT is ∼16% over the existing state-of-the-art value for p-type SnSe alloy doped with expensive Ag. This enhancement in ZT is primarily due to the presence of Cu{sub 2}Se second phase associated with intrinsic nanostructure formation of SnSe. This enhancement has been corroborated with the microstructural characterization using field emission scanning electron microscopy and X-ray diffraction studies. Also, Cu doped SnSe exhibited a higher value of carrier concentration in comparison to other samples doped with Al, Pb and In. Further, the compatibility factor of Cu doped SnSe alloys exhibited value of 1.62 V{sup −1} at 773 K and it is suitable to segment with most of the novel TE materials for obtaining the higher thermoelectric efficiencies. - Highlights: • Tin selenide (SnSe) doped with non-toxic and inexpensive dopants. • Synthesized highly dense SnSe employing Spark plasma sintering. • Enhanced thermoelectric compatibility factor of SnSe. • Enhanced thermoelectric performance of SnSe doped with Copper.

  5. Optimization of Thermoelectric Components for Automobile Waste Heat Recovery Systems

    Science.gov (United States)

    Kumar, Sumeet; Heister, Stephen D.; Xu, Xianfan; Salvador, James R.

    2015-10-01

    For a typical spark ignition engine approximately 40% of available thermal energy is lost as hot exhaust gas. To improve fuel economy, researchers are currently evaluating technology which exploits exhaust stream thermal power by use of thermoelectric generators (TEGs) that operate on the basis of the Seebeck effect. A 5% improvement in fuel economy, achieved by use of TEG output power, is a stated objective for light-duty trucks and personal automobiles. System modeling of thermoelectric (TE) components requires solution of coupled thermal and electric fluxes through the n and p-type semiconductor legs, given appropriate thermal boundary conditions at the junctions. Such applications have large thermal gradients along the semiconductor legs, and material properties are highly dependent on spatially varying temperature profiles. In this work, one-dimensional heat flux and temperature variations across thermoelectric legs were solved by using an iterative numerical approach to optimize both TE module and TEG designs. Design traits were investigated by assuming use of skutterudite as a thermoelectric material with potential for automotive applications in which exhaust gas and heat exchanger temperatures typically vary from 100°C to over 600°C. Dependence of leg efficiency, thermal fluxes and electric power generation on leg geometry, fill fractions, electric current, thermal boundary conditions, etc., were studied in detail. Optimum leg geometries were computed for a variety of automotive exhaust conditions.

  6. La 1-x Ca x MnO 3 semiconducting nanostructures: morphology and thermoelectric properties.

    Science.gov (United States)

    Culebras, Mario; Torán, Raquel; Gómez, Clara M; Cantarero, Andrés

    2014-01-01

    Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1-x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

  7. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  8. A note on the electrochemical nature of the thermoelectric power

    Science.gov (United States)

    Apertet, Y.; Ouerdane, H.; Goupil, C.; Lecoeur, Ph.

    2016-04-01

    While thermoelectric transport theory is well established and widely applied, it is not always clear in the literature whether the Seebeck coefficient, which is a measure of the strength of the mutual interaction between electric charge transport and heat transport, is to be related to the gradient of the system's chemical potential or to the gradient of its electrochemical potential. The present article aims to clarify the thermodynamic definition of the thermoelectric coupling. First, we recall how the Seebeck coefficient is experimentally determined. We then turn to the analysis of the relationship between the thermoelectric power and the relevant potentials in the thermoelectric system: As the definitions of the chemical and electrochemical potentials are clarified, we show that, with a proper consideration of each potential, one may derive the Seebeck coefficient of a non-degenerate semiconductor without the need to introduce a contact potential as seen sometimes in the literature. Furthermore, we demonstrate that the phenomenological expression of the electrical current resulting from thermoelectric effects may be directly obtained from the drift-diffusion equation.

  9. Americium-241 radioisotope thermoelectric generator development for space applications

    International Nuclear Information System (INIS)

    Ambrosi, Richard; Williams, Hugo; Samara-Ratna, Piyal

    2013-01-01

    Space nuclear power systems are under development in the UK in collaboration with European partners as part of a European Space Agency (ESA) programme. Radioisotope thermoelectric generators (RTG) are an important element of this new capability in Europe. RTG systems being developed in Europe are targeting the 10 W electric to 50 W electric power generation range adopting a modular scalable approach to the design. Radiogenic decay heat from radioisotopes can be converted to electrical power by using appropriate semiconductor based thermoelectric materials. The plan for Europe is to develop radioisotope space nuclear power systems based on both thermoelectric and Stirling power conversion systems. Although primarily focused on delivering up to 50 W of electrical power, the European radioisotope thermoelectric system development programme is targeting americium-241 as a fuel source and is maximizing the use of commercially available thermoelectric manufacturing processes in order to accelerate the development of power conversion systems. The use of americium provides an economic solution at high isotopic purity and is product of a separation process from stored plutonium produced during the reprocessing of civil nuclear fuel. A laboratory prototype that uses electrical heating as a substitute for the radioisotope was developed to validate the designs. This prototype has now been tested. This paper outlines the requirements for a European americium-241 fuelled RTG, describes the most recent updates in system design and provides further insight into recent laboratory prototype test campaigns. (author)

  10. Americium-241 radioisotope thermoelectric generator development for space applications

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosi, Richard; Williams, Hugo; Samara-Ratna, Piyal, E-mail: rma8@le.ac.uk [University of Leicester, (United Kingdom); and others

    2013-07-01

    Space nuclear power systems are under development in the UK in collaboration with European partners as part of a European Space Agency (ESA) programme. Radioisotope thermoelectric generators (RTG) are an important element of this new capability in Europe. RTG systems being developed in Europe are targeting the 10 W electric to 50 W electric power generation range adopting a modular scalable approach to the design. Radiogenic decay heat from radioisotopes can be converted to electrical power by using appropriate semiconductor based thermoelectric materials. The plan for Europe is to develop radioisotope space nuclear power systems based on both thermoelectric and Stirling power conversion systems. Although primarily focused on delivering up to 50 W of electrical power, the European radioisotope thermoelectric system development programme is targeting americium-241 as a fuel source and is maximizing the use of commercially available thermoelectric manufacturing processes in order to accelerate the development of power conversion systems. The use of americium provides an economic solution at high isotopic purity and is product of a separation process from stored plutonium produced during the reprocessing of civil nuclear fuel. A laboratory prototype that uses electrical heating as a substitute for the radioisotope was developed to validate the designs. This prototype has now been tested. This paper outlines the requirements for a European americium-241 fuelled RTG, describes the most recent updates in system design and provides further insight into recent laboratory prototype test campaigns. (author)

  11. The thermo-electric nature of the Debye temperature

    Directory of Open Access Journals (Sweden)

    Mithun Bhowmick

    2018-05-01

    Full Text Available The Debye temperature is typically associated with the heat capacity of a solid and the cut-off of the possible lattice vibrations, but not necessarily to the electric conductivity of the material. By investigating III-V and II-VI compound semiconductors, we reveal that the Debye temperature represents a thermo-electric material parameter, connecting the thermal and electronic properties of a solid via a distinct power law.

  12. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  13. Silicon Germanium Quantum Well Thermoelectrics

    Science.gov (United States)

    Davidson, Anthony Lee, III

    Today's growing energy demands require new technologies to provide high efficiency clean energy. Thermoelectrics that convert heat to electrical energy directly can provide a method for the automobile industry to recover waste heat to power vehicle electronics, hence improving fuel economy. If large enough efficiencies can be obtained then the internal combustion engine could even be replaced. Exhaust temperature for automotive application range from 400 to 800 K. In this temperature range the current state of the art materials are bulk Si1-xGex alloys. By alternating layers of Si and Si1-xGex alloy device performance may be enhanced through quantum well effects and variations in material thermal properties. In this study, superlattices designed for in-plane operation with varying period and crystallinity are examined to determine the effect on electrical and thermal properties. In-plane electrical resistivity of these materials was found to be below the bulk material at a similar doping at room temperature, confirming the role of quantum wells in electron transport. As period is reduced in the structures boundary scattering limits electron propagation leading to increased resistivity. The Seebeck coefficient measured at room temperature is higher than the bulk material, additionally lending proof to the effects of quantum wells. When examining cross-plane operation the low doping in the Si layers of the device produce high resistivity resulting from boundary scattering. Thermal conductivity was measured from 77 K up to 674 K and shows little variation due to periodicity and temperature, however an order of magnitude reduction over bulk Si1-xGex is shown in all samples. A model is developed that suggests a combination of phonon dispersion effects and strong boundary scattering. Further study of the phonon dispersion effects was achieved through the examination of the heat capacity by combining thermal diffusivity with thermal conductivity. All superlattices show a

  14. Thermoelectric detection of inclusions in metallic biomaterials by magnetic sensing

    Directory of Open Access Journals (Sweden)

    Hector Carreon

    2017-05-01

    Full Text Available The detectability of small inclusions and subtle imperfections by magnetic measurements that senses thermoelectric currents produced by a temperature gradient is ultimately limited by the intrinsic thermoelectric anisotropy and inhomogeneity of the material to be inspected. The probability of detection (POD of a given material flaw is determined by the resulting signal-to-noise ratio rather than by the absolute magnitude of the signal itself. The strength of the magnetic field to be detected greatly depends on the physical nature of the host medium and dimensions of the imperfection. This paper presents experimental data for the magnetic field produced by thermoelectric currents around tin inclusions in different host medium such as 316LVM stainless steel and Ti-6Al-4V titanium alloy under external thermal excitation. The diameter of the inclusions and the lift-off distance varied from 0.39 to 3.175 mm and from 1 to 10 mm, respectively. A 0.6 °C/cm temperature gradient in the samples produced peak magnetic flux densities ranging from 0.1 to 280 nT, that was measured by a fluxgate magnetometer. The numerical results were found to be in good agreement with theoretical predictions and demonstrated that both property anisotropy and gradient in thermoelectric materials can significantly influence the induced thermoelectric currents and magnetic fields.

  15. Thermoelectric detection of inclusions in metallic biomaterials by magnetic sensing

    Science.gov (United States)

    Carreon, Hector

    2017-05-01

    The detectability of small inclusions and subtle imperfections by magnetic measurements that senses thermoelectric currents produced by a temperature gradient is ultimately limited by the intrinsic thermoelectric anisotropy and inhomogeneity of the material to be inspected. The probability of detection (POD) of a given material flaw is determined by the resulting signal-to-noise ratio rather than by the absolute magnitude of the signal itself. The strength of the magnetic field to be detected greatly depends on the physical nature of the host medium and dimensions of the imperfection. This paper presents experimental data for the magnetic field produced by thermoelectric currents around tin inclusions in different host medium such as 316LVM stainless steel and Ti-6Al-4V titanium alloy under external thermal excitation. The diameter of the inclusions and the lift-off distance varied from 0.39 to 3.175 mm and from 1 to 10 mm, respectively. A 0.6 °C/cm temperature gradient in the samples produced peak magnetic flux densities ranging from 0.1 to 280 nT, that was measured by a fluxgate magnetometer. The numerical results were found to be in good agreement with theoretical predictions and demonstrated that both property anisotropy and gradient in thermoelectric materials can significantly influence the induced thermoelectric currents and magnetic fields.

  16. Low-Temperature Thermoelectric Properties of Fe2VAl with Partial Cobalt Doping

    Science.gov (United States)

    Liu, Chang; Morelli, Donald T.

    2012-06-01

    Ternary metallic alloy Fe2VAl with a pseudogap in its energy band structure has received intensive scrutiny for potential thermoelectric applications. Due to the sharp change in the density of states profile near the Fermi level, interesting transport properties can be triggered to render possible enhancement in the overall thermoelectric performance. Previously, this full-Heusler-type alloy was partially doped with cobalt at the iron sites to produce a series of compounds with n-type conductivity. Their thermoelectric properties in the temperature range of 300 K to 850 K were reported. In this research, efforts were made to extend the investigation on (Fe1- x Co x )2VAl to the low-temperature range. Alloy samples were prepared by arc-melting and annealing. Seebeck coefficient, electrical resistivity, and thermal conductivity measurements were performed from 80 K to room temperature. The effects of cobalt doping on the material's electronic and thermal properties are discussed.

  17. Nanostructured Thermoelectric Oxides for Energy Harvesting Applications

    KAUST Repository

    Abutaha, Anas I.

    2015-01-01

    of thermoelectrics are still limited to one materials system, namely SiGe, since the traditional thermoelectric materials degrade and oxidize at high temperature. Therefore, oxide thermoelectrics emerge as a promising class of materials since they can operate

  18. Green thermoelectrics: Observation and analysis of plant thermoelectric response

    Directory of Open Access Journals (Sweden)

    Goupil Christophe

    2016-01-01

    Full Text Available Plants are sensitive to thermal and electrical effects; yet the coupling of both, known as thermoelectricity, and its quantitative measurement in vegetal systems never were reported. We recorded the thermoelectric response of bean sprouts under various thermal conditions and stress. The obtained experimental data unambiguously demonstrate that a temperature difference between the roots and the leaves of a bean sprout induces a thermoelectric voltage between these two points. Basing our analysis of the data on the force-flux formalism of linear response theory, we found that the strength of the vegetal equivalent to the thermoelectric coupling is one order of magnitude larger than that in the best thermoelectric materials. Experimental data also show the importance of the thermal stress variation rate in the plant’s electrophysiological response. therefore, thermoelectric effects are sufficiently important to partake in the complex and intertwined processes of energy and matter transport within plants.

  19. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  20. Dismantling and chemical characterization of spent Peltier thermoelectric devices for antimony, bismuth and tellurium recovery.

    Science.gov (United States)

    Balva, Maxime; Legeai, Sophie; Garoux, Laetitia; Leclerc, Nathalie; Meux, Eric

    2017-04-01

    Major uses of thermoelectricity concern refrigeration purposes, using Peltier devices, mainly composed of antimony, bismuth and tellurium. Antimony was identified as a critical raw material by EU and resources of bismuth and tellurium are not inexhaustible, so it is necessary to imagine the recycling of thermoelectric devices. That for, a complete characterization is needed, which is the aim of this work. Peltier devices were manually dismantled in three parts: the thermoelectric legs, the alumina plates on which remain the electrical contacts and the silicone paste used to connect the plates. The characterization was performed using five Peltier devices. It includes mass balances of the components, X-ray diffraction analysis of the thermoelectric legs and elemental analysis of each part of the device. It appears that alumina represents 45% of a Peltier device in weight. The electrical contacts are mainly composed of copper and tin, and the thermoelectric legs of bismuth, tellurium and antimony. Thermoelectric legs appear to be Se-doped Bi 2 Te 3 and (Bi 0,5 Sb 1,5 )Te 3 for n type and p type semiconductors, respectively. This work shows that Peltier devices can be considered as a copper ore and that thermoelectric legs contain high amounts of bismuth, tellurium and antimony compared to their traditional resources.

  1. Thermoelectric properties of WSi{sub 2}–Si{sub x}Ge{sub 1−x} composites

    Energy Technology Data Exchange (ETDEWEB)

    Dynys, F.W.; Sayir, A. [NASA Glenn Research Center, Cleveland, OH 44135 (United States); Mackey, J., E-mail: jam151@zips.uakron.edu [Department of Mechanical Engineering, University of Akron, Akron, OH 44325 (United States); Sehirlioglu, A. [Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106 (United States)

    2014-08-01

    Highlights: • We explore a novel W/Si/Ge composite system for thermoelectric applications. • The influence of crucible selection on electrical properties is investigated. • Introduction of W can reduce the expensive Ge component of the alloy. - Abstract: Thermoelectric properties of the W/Si/Ge alloy system have been investigated with varying concentration levels of germanium and tungsten. The alloys were fabricated by directional solidification with the Bridgman method using boron nitride and fused silica crucibles. The effect of crucible contamination was investigated and found to result in doping the system to suitable levels for thermoelectric applications. The system has been demonstrated as a suitable high temperature p-type thermoelectric material exhibiting high power factors, >3000 μW/m K{sup 2}. Seebeck coefficients of the system are on the order of +300 μV/K and electrical conductivities of 2.8 × 10{sup 4} S/m at the optimum operating temperature. The best composition, 0.9 at% W/9.3 at% Ge, achieved a figure of merit comparable to RTG values over the temperature range of interest. The results suggest that W addition can reduce the use of expensive Ge component of the alloy. Reported are the details of processing conditions, microstructure development, and temperature dependent thermoelectric properties. The material system was stable at the temperatures required for NASA’s radioisotope thermoelectric generators.

  2. Applications of nuclear-powered thermoelectric generators in space

    International Nuclear Information System (INIS)

    Rowe, D.M.

    1991-01-01

    The source of electrical power which enables information to be transmitted from the space crafts Voyager 1 and 2 back to Earth after a time period of more than a decade and at a distance of more than a billion miles is known as an RTG (radioisotope thermoelectric generator). It utilises the Seebeck effect in producing electricity from heat. In essence it consists of a large number of semiconductor thermocouples connected electrically in series and thermally in parallel. A temperature difference is maintained across the thermocouples by providing a heat source, which in the case of an RTG is a radioactive isotope, and the heat sink is space. The combination of an energy-conversion system, free of moving parts and a long-life, high energy-density heat source, provides a supply of electrical power typically in the range of tens to hundred of watts and which operates reliably over extended periods of time. An electric power source, based upon thermoelectric conversion by which utilises a nuclear reactor as a heat source, has also been deployed in space and a 100-kW system is being developed to provide electrical power to a variety of commercial and military projects including SDI. Developments in thermoelectrics that have taken place in the western world during the past 30 years are primarily due to United States interest and involvement in the exploration of space. This paper reviews US applications of nuclear-powered thermoelectric generators in space. (author)

  3. Thermoelectric Power Factor Limit of a 1D Nanowire

    Science.gov (United States)

    Chen, I.-Ju; Burke, Adam; Svilans, Artis; Linke, Heiner; Thelander, Claes

    2018-04-01

    In the past decade, there has been significant interest in the potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it has been challenging to find high thermoelectric power factors based on 1D effects in practice. Here we point out that there is an upper limit to the thermoelectric power factor of nonballistic 1D nanowires, as a consequence of the recently established quantum bound of thermoelectric power output. We experimentally test this limit in quasiballistic InAs nanowires by extracting the maximum power factor of the first 1D subband through I -V characterization, finding that the measured maximum power factors conform to the theoretical limit. The established limit allows the prediction of the achievable power factor of a specific nanowire material system with 1D electronic transport based on the nanowire dimension and mean free path. The power factor of state-of-the-art semiconductor nanowires with small cross section and high crystal quality can be expected to be highly competitive (on the order of mW /m K2 ) at low temperatures. However, they have no clear advantage over bulk materials at, or above, room temperature.

  4. Performance study of thermo-electric generator

    Science.gov (United States)

    Rohit, G.; Manaswini, D.; Kotebavi, Vinod; R, Nagaraja S.

    2017-07-01

    Devices like automobiles, stoves, ovens, boilers, kilns and heaters dissipate large amount of waste heat. Since most of this waste heat goes unused, the efficiency of these devices is drastically reduced. A lot of research is being conducted on the recovery of the waste heat, among which Thermoelectric Generators (TEG) is one of the popular method. TEG is a semiconductor device that produces electric potential difference when a thermal gradient develops on it. This paper deals with the study of performance of a TEG module for different hot surface temperatures. Performance characteristics used here are voltage, current and power developed by the TEG. One side of the TEG was kept on a hot plate where uniform heat flux was supplied to that. And the other side was cooled by supplying cold water. The results show that the output power increases significantly with increase in the temperature of the hot surface.

  5. Fine Art of Thermoelectricity.

    Science.gov (United States)

    Brus, Viktor V; Gluba, Marc; Rappich, Jörg; Lang, Felix; Maryanchuk, Pavlo D; Nickel, Norbert H

    2018-02-07

    A detailed study of hitherto unknown electrical and thermoelectric properties of graphite pencil traces on paper was carried out by measuring the Hall and Seebeck effects. We show that the combination of pencil-drawn graphite and brush-painted poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) films on regular office paper results in extremely simple, low-cost, and environmentally friendly thermoelectric power generators with promising output characteristics at low-temperature gradients. The working characteristics can be improved even further by incorporating n-type InSe flakes. The combination of pencil-drawn n-InSe:graphite nanocomposites and brush-painted PEDOT:PSS increases the power output by 1 order of magnitude.

  6. Microwatt thermoelectric generator

    International Nuclear Information System (INIS)

    Goslee, D.E.; Bustard, T.S.

    1976-01-01

    A microwatt thermoelectric generator suitable for implanting in the body is described. The generator utilizes a nuclear energy source. Provision is made for temporary electrical connection to the generator for testing purposes, and for ensuring that the heat generated by the nuclear source does not bypass the pile. Also disclosed is a getter which is resistant to shrinkage during sintering, and a foil configuration for controlling the radiation of heat from the nuclear source to the hot plate of the pile

  7. Microwatt thermoelectric generator

    International Nuclear Information System (INIS)

    Goslee, D.E.

    1976-01-01

    A microwatt thermoelectric generator suitable for implanting in the body is described. The disclosed generator utilizes a nuclear energy source. Provision is made for temporary electrical connection to the generator for testing purposes, and for ensuring that the heat generated by the nuclear source does not bypass the pile. Also disclosed is a getter which is resistant to shrinkage during sintering, and a foil configuration for controlling the radiation of heat from the nuclear source to the hot plate of the pile

  8. Opto-thermoelectric nanotweezers

    Science.gov (United States)

    Lin, Linhan; Wang, Mingsong; Peng, Xiaolei; Lissek, Emanuel N.; Mao, Zhangming; Scarabelli, Leonardo; Adkins, Emily; Coskun, Sahin; Unalan, Husnu Emrah; Korgel, Brian A.; Liz-Marzán, Luis M.; Florin, Ernst-Ludwig; Zheng, Yuebing

    2018-04-01

    Optical manipulation of plasmonic nanoparticles provides opportunities for fundamental and technical innovation in nanophotonics. Optical heating arising from the photon-to-phonon conversion is considered as an intrinsic loss in metal nanoparticles, which limits their applications. We show here that this drawback can be turned into an advantage, by developing an extremely low-power optical tweezing technique, termed opto-thermoelectric nanotweezers. By optically heating a thermoplasmonic substrate, a light-directed thermoelectric field can be generated due to spatial separation of dissolved ions within the heating laser spot, which allows us to manipulate metal nanoparticles of a wide range of materials, sizes and shapes with single-particle resolution. In combination with dark-field optical imaging, nanoparticles can be selectively trapped and their spectroscopic response can be resolved in situ. With its simple optics, versatile low-power operation, applicability to diverse nanoparticles and tunable working wavelength, opto-thermoelectric nanotweezers will become a powerful tool in colloid science and nanotechnology.

  9. Shape memory alloy actuator

    Science.gov (United States)

    Varma, Venugopal K.

    2001-01-01

    An actuator for cycling between first and second positions includes a first shaped memory alloy (SMA) leg, a second SMA leg. At least one heating/cooling device is thermally connected to at least one of the legs, each heating/cooling device capable of simultaneously heating one leg while cooling the other leg. The heating/cooling devices can include thermoelectric and/or thermoionic elements.

  10. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  11. Intrinsically High Thermoelectric Performance in AgInSe2 n-Type Diamond-Like Compounds.

    Science.gov (United States)

    Qiu, Pengfei; Qin, Yuting; Zhang, Qihao; Li, Ruoxi; Yang, Jiong; Song, Qingfeng; Tang, Yunshan; Bai, Shengqiang; Shi, Xun; Chen, Lidong

    2018-03-01

    Diamond-like compounds are a promising class of thermoelectric materials, very suitable for real applications. However, almost all high-performance diamond-like thermoelectric materials are p-type semiconductors. The lack of high-performance n-type diamond-like thermoelectric materials greatly restricts the fabrication of diamond-like material-based modules and their real applications. In this work, it is revealed that n-type AgInSe 2 diamond-like compound has intrinsically high thermoelectric performance with a figure of merit ( zT ) of 1.1 at 900 K, comparable to the best p-type diamond-like thermoelectric materials reported before. Such high zT is mainly due to the ultralow lattice thermal conductivity, which is fundamentally limited by the low-frequency Ag-Se "cluster vibrations," as confirmed by ab initio lattice dynamic calculations. Doping Cd at Ag sites significantly improves the thermoelectric performance in the low and medium temperature ranges. By using such high-performance n-type AgInSe 2 -based compounds, the diamond-like thermoelectric module has been fabricated for the first time. An output power of 0.06 W under a temperature difference of 520 K between the two ends of the module is obtained. This work opens a new window for the applications using the diamond-like thermoelectric materials.

  12. Methods of synthesizing thermoelectric materials

    Science.gov (United States)

    Ren, Zhifeng; Chen, Shuo; Liu, Wei-Shu; Wang, Hengzhi; Wang, Hui; Yu, Bo; Chen, Gang

    2016-04-05

    Methods for synthesis of thermoelectric materials are disclosed. In some embodiments, a method of fabricating a thermoelectric material includes generating a plurality of nanoparticles from a starting material comprising one or more chalcogens and one or more transition metals; and consolidating the nanoparticles under elevated pressure and temperature, wherein the nanoparticles are heated and cooled at a controlled rate.

  13. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  14. Engineering half-Heusler thermoelectric materials using Zintl chemistry

    Science.gov (United States)

    Zeier, Wolfgang G.; Schmitt, Jennifer; Hautier, Geoffroy; Aydemir, Umut; Gibbs, Zachary M.; Felser, Claudia; Snyder, G. Jeffrey

    2016-06-01

    Half-Heusler compounds based on XNiSn and XCoSb (X = Ti, Zr or Hf) have rapidly become important thermoelectric materials for converting waste heat into electricity. In this Review, we provide an overview on the electronic properties of half-Heusler compounds in an attempt to understand their basic structural chemistry and physical properties, and to guide their further development. Half-Heusler compounds can exhibit semiconducting transport behaviour even though they are described as ‘intermetallic’ compounds. Therefore, it is most useful to consider these systems as rigid-band semiconductors within the framework of Zintl (or valence-precise) compounds. These considerations aid our understanding of their properties, such as the bandgap and low hole mobility because of interstitial Ni defects in XNiSn. Understanding the structural and bonding characteristics, including the presence of defects, will help to develop different strategies to improve and design better half-Heusler thermoelectric materials.

  15. Thermoelectric properties of doped BaHfO_3

    International Nuclear Information System (INIS)

    Dixit, Chandra Kr.; Bhamu, K. C.; Sharma, Ramesh

    2016-01-01

    We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO_3 by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO_3 doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO_3 is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO_3 is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

  16. Criteria for extending the operation periods of thermoelectric converters based on IV-VI compounds

    Energy Technology Data Exchange (ETDEWEB)

    Sadia, Yatir, E-mail: yatttir@yahoo.com [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Ohaion-Raz, Tsion [Department of Chemistry, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Ben-Yehuda, Ohad; Korngold, Meidad; Gelbstein, Yaniv [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel)

    2016-09-15

    The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations, had positioned the research of renewable energy conversion methods in general and of thermoelectric direct conversion of thermal into electrical energies in particular, in the forefront of the currently active applicative sciences. IV-VI thermoelectric compounds (e.g. GeTe, PbTe and SnTe) and their alloys comprise some of the most efficient thermoelectric compositions ever reported. Yet a proper utilization of such materials in practical thermoelectric devices, still requires an overcoming the so-called technological “valley of death”, including among others, transport properties' degradation, due to sublimation of volatile Te rich species, while being subjected to elevated temperatures for long periods of time. In an attempt to establish practical operation criteria for extending the operation periods of such thermoelectric converters, it is currently shown based on thermal gravimetric and metallurgical considerations that such harmful sublimation can be practically bridged over by limiting the maximal operating temperatures to the 410–430 °C range for GeTe rich alloys and to 510–530 °C for PbTe and SnTe rich alloys, depending of the thermoelectric leg's diameter. - Graphical abstract: Evaporation rate in the GeTe and PbTe system showing the measured evaporation rates and the maximal operating temperatures for different compositions. In addition, the microstructure after evaporation is shown for PbTe, TAGS-85, and doped Pb{sub 0.13}Ge{sub 087}Te. Display Omitted - Highlights: • Evaporation rates of GeTe and PbTe based thermoelectric compounds were determined. • A criterion for their maximum operating temperature was established. • The materials showed phase separations and off-stoichiometry compositions.

  17. Electronic cooling using thermoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Zebarjadi, M., E-mail: m.zebarjadi@rutgers.edu [Department of Mechanical and Aerospace Engineering, Rutgers University, Piscataway, New Jersey 08854 (United States); Institute of Advanced Materials, Devices, and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States)

    2015-05-18

    Thermoelectric coolers or Peltier coolers are used to pump heat in the opposite direction of the natural heat flux. These coolers have also been proposed for electronic cooling, wherein the aim is to pump heat in the natural heat flux direction and from hot spots to the colder ambient temperature. In this manuscript, we show that for such applications, one needs to use thermoelectric materials with large thermal conductivity and large power factor, instead of the traditionally used high ZT thermoelectric materials. We further show that with the known thermoelectric materials, the active cooling cannot compete with passive cooling, and one needs to explore a new set of materials to provide a cooling solution better than a regular copper heat sink. We propose a set of materials and directions for exploring possible materials candidates suitable for electronic cooling. Finally, to achieve maximum cooling, we propose to use thermoelectric elements as fins attached to copper blocks.

  18. Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor

    Science.gov (United States)

    Bui, Cong Tinh; Garcia, Christina A. C.; Tu, Nguyen Thanh; Tanaka, Masaaki; Hai, Pham Nam

    2018-05-01

    Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.

  19. Thermoelectric materials -- New directions and approaches. Materials Research Society symposium proceedings, Volume 478

    Energy Technology Data Exchange (ETDEWEB)

    Tritt, T M; Kanatzidis, M G; Lyon, Jr, H B; Mahan, G D [eds.

    1997-07-01

    Thermoelectric materials are utilized in a wide variety of applications related to solid-state refrigeration or small-scale power generation. Thermoelectric cooling is an environmentally friendly method of small-scale cooling in specific applications such as cooling computer chips and laser diodes. Thermoelectric materials are used in a wide range of applications from beverage coolers to power generation for deep-space probes such as the Voyager missions. Over the past thirty years, alloys based on the Bi-Te systems {l{underscore}brace}(Bi{sub 1{minus}x}Sb{sub x}){sub 2} (Te{sub 1{minus}x}Se{sub x}){sub 3}{r{underscore}brace} and Si{sub 1{minus}x}Ge{sub x} systems have been extensively studied and optimized for their use as thermoelectric materials to perform a variety of solid-state thermoelectric refrigeration and power generation tasks. Despite this extensive investigation of the traditional thermoelectric materials, there is still a substantial need and room for improvement, and thus, entirely new classes of compounds will have to be investigated. Over the past two-to-three years, research in the field of thermoelectric materials has been undergoing a rapid rebirth. The enhanced interest in better thermoelectric materials has been driven by the need for much higher performance and new temperature regimes for thermoelectric devices in many applications. The essence of a good thermoelectric is given by the determination of the material's dimensionless figure of merit, ZT = ({alpha}{sup 2}{sigma}/{lambda})T, where {alpha} is the Seebeck coefficient, {sigma} the electrical conductivity and {lambda} the total thermal conductivity. The best thermoelectric materials have a value of ZT = 1. This ZT = 1 has been an upper limit for more than 30 years, yet no theoretical or thermodynamic reason exits for why it can not be larger. The focus of the symposium is embodied in the title, Thermoelectric Materials: New Directions and Approaches. Many of the researchers in the

  20. Thermoelectric performance of tellurium-reduced quaternary p-type lead–chalcogenide composites

    International Nuclear Information System (INIS)

    Aminorroaya Yamini, Sima; Wang, Heng; Gibbs, Zachary M.; Pei, Yanzhong; Mitchell, David R.G.; Dou, Shi Xue; Snyder, G. Jeffrey

    2014-01-01

    Graphical abstract: - Abstract: A long-standing technological challenge to the widespread application of thermoelectric generators is obtaining high-performance thermoelectric materials from abundant elements. Intensive study on PbTe alloys has resulted in a high figure of merit for the single-phase ternary PbTe–PbSe system through band structure engineering, and the low thermal conductivity achieved due to nanostructuring leads to high thermoelectric performance for ternary PbTe–PbS compounds. Recently, the single-phase p-type quaternary PbTe–PbSe–PbS alloys have been shown to provide thermoelectric performance superior to the binary and ternary lead chalcogenides. This occurs via tuning of the band structure and from an extraordinary low thermal conductivity resulting from high-contrast atomic mass solute atoms. Here, we present the thermoelectric efficiency of nanostructured p-type quaternary PbTe–PbSe–PbS composites and compare the results with corresponding single-phase quaternary lead chalcogenide alloys. We demonstrate that the very low lattice thermal conductivity achieved is attributed to phonon scattering at high-contrast atomic mass solute atoms rather than from the contribution of secondary phases. This results in a thermoelectric efficiency of ∼1.4 over a wide temperature range (650–850 K) in a p-type quaternary (PbTe) 0.65 (PbSe) 0.1 (PbS) 0.25 composite that is lower than that of single-phase (PbTe) 0.85 (PbSe) 0.1 (PbS) 0.05 alloy without secondary phases

  1. Technical Feasibility Evaluation on The Use of A Peltier Thermoelectric Module to Recover Automobile Exhaust Heat

    Science.gov (United States)

    Sugiartha, N.; Sastra Negara, P.

    2018-01-01

    A thermoelectric module composes of integrated p-n semiconductors as hot and cold side junctions and uses Seebeck effect between them to function as a thermoelectric generator (TEG) to directly convert heat into electrical power. Exhaust heat from engines as otherwise wasted to the atmosphere is one of the heat sources freely available to drive the TEG. This paper evaluates technical feasibility on the use of a Peltier thermoelectric module for energy recovery application of such kind of waste heat. An experimental apparatus has been setup to simulate real conditions of automobile engine exhaust piping system. It includes a square section aluminium ducting, an aluminium fin heat sink and a TEC1 12706 thermoelectric module. A heater and a cooling fan are employed to simulate hot exhaust gas and ambient air flows, respectively. Electrical loading is controlled by resistors. Dependent variables measured during the test are cold and hot side temperatures, open and loaded circuit output voltages and electrical current. The test results revealed a promising application of the Peltier thermoelectric module for the engine exhaust heat recovery, though the loaded output power produced and loaded output voltage are still far lower than the commercially thermoelectric module originally purposed for the TEG application.

  2. High thermoelectric power factor in two-dimensional crystals of Mo S2

    Science.gov (United States)

    Hippalgaonkar, Kedar; Wang, Ying; Ye, Yu; Qiu, Diana Y.; Zhu, Hanyu; Wang, Yuan; Moore, Joel; Louie, Steven G.; Zhang, Xiang

    2017-03-01

    The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces toward renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature gradient and a large electrical conductivity while maintaining a low thermal conductivity. For a given thermal conductivity and temperature, the thermoelectric power factor is determined by the electronic structure of the material. Low dimensionality (1D and 2D) opens new routes to a high power factor due to the unique density of states (DOS) of confined electrons and holes. The 2D transition metal dichalcogenide (TMDC) semiconductors represent a new class of thermoelectric materials not only due to such confinement effects but especially due to their large effective masses and valley degeneracies. Here, we report a power factor of Mo S2 as large as 8.5 mW m-1K-2 at room temperature, which is among the highest measured in traditional, gapped thermoelectric materials. To obtain these high power factors, we perform thermoelectric measurements on few-layer Mo S2 in the metallic regime, which allows us to access the 2D DOS near the conduction band edge and exploit the effect of 2D confinement on electron scattering rates, resulting in a large Seebeck coefficient. The demonstrated high, electronically modulated power factor in 2D TMDCs holds promise for efficient thermoelectric energy conversion.

  3. CuAlTe{sub 2}: A promising bulk thermoelectric material

    Energy Technology Data Exchange (ETDEWEB)

    Gudelli, Vijay Kumar [Department of Physics, Indian Institute of Technology Hyderabad, Ordnance Factory Estate, Yeddumailaram 502 205, Telangana (India); Kanchana, V., E-mail: kanchana@iith.ac.in [Department of Physics, Indian Institute of Technology Hyderabad, Ordnance Factory Estate, Yeddumailaram 502 205, Telangana (India); Vaitheeswaran, G. [Advanced Centre of Research in High Energy Materials (ACRHEM), University of Hyderabad, Prof. C. R. Rao Road, Gachibowli, Hyderabad 500 046, Telangana (India)

    2015-11-05

    Transport properties of Cu-based chalcopyrite materials are presented using the full potential linear augmented plane wave method and Boltzmann Semi-classical theory. All the studied compounds appear to be direct band gap semiconductors evaluated based on the Tran-Blaha modified Becke-Johnson potential. The heavy and light band combination found near the valence band maximum (VBM) drive these materials to possess good thermoelectric properties. Among the studied compounds, CuAlTe{sub 2} is found to be more promising, in comparison with CuGaTe{sub 2}, which is reported to be an efficient thermoelectric material with appreciable figure of merit. Another interesting fact about CuAlTe{sub 2} is the comparable thermoelectric properties possessed by both n- type and p-type carriers, which might attract good device applications and are explained in detail using the electronic structure calculations. - Highlights: • Band structure calculation of Cu(Al,Ga)Ch{sub 2} compounds with the TB-mBJ functional. • Mixed heavy-light bands near Fermi level might favour good thermoelectric properties. • Among the investigated compounds CuAlTe{sub 2} appears to be more promising. • Thermoelectric properties of CuAlTe{sub 2} are almost comparable with CuGaTe{sub 2}. • Both n,p-type thermoelectric properties of CuAlTe{sub 2} can attract device applications.

  4. Microwatt thermoelectric generator

    International Nuclear Information System (INIS)

    Hittman, F.; Bustard, T.S.

    1976-01-01

    A microwatt thermoelectric generator suitable for implanting in the body is described. The generator utilizes a nuclear energy source. Provision is made for temporary electrical connection to the generator for testing purposes, and for ensuring that the heat generated by the nuclear source does not bypass the pile. Also disclosed is a getter which is resistant to shrinkage during sintering, and a foil configuration for controlling the radiation of heat from the nuclear source to the hot plate of the pile. 2 claims, 4 drawing figures

  5. Microwatt thermoelectric generator

    International Nuclear Information System (INIS)

    Barr, H.N.

    1978-01-01

    A microwatt thermoelectric generator suitable for implanting in the body is described. The disclosed generator utilizes a nuclear energy source. Provision is made for temporary electrical connection to the generator for testing purposes, and for ensuring that the heat generated by the nuclear source does not bypass the pile. Also disclosed is a getter which is resistant to shrinkage during sintering, and a foil configuration for controlling the radiation of heat from the nuclear source to the hot plate of the pile. 4 claims, 4 figures

  6. Superlattices in thermoelectric applications

    International Nuclear Information System (INIS)

    Sofo, J.O.; Mahan, G.D.; Tennessee Univ., Knoxville, TN

    1994-08-01

    The electrical conductivity, thermopower and the electronic contribution to the thermal conductivity of a superlattice, are calculated with the electric field and the thermal gradient applied parallel to the interfaces. Tunneling between quantum wells is included. The broadening of the lowest subband when the period of the superlattice is decreased produces a reduction of the thermoelectric figure of merit. However, we found that a moderate increase of the figure of merit may be expected for intermediate values of the period, due to the enhancement of the density of states produced by the superlattice structure

  7. Hall and thermoelectric evaluation of p-type InAs

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-15

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  8. Hall and thermoelectric evaluation of p-type InAs

    International Nuclear Information System (INIS)

    Wagener, M.C.; Wagener, V.; Botha, J.R.

    2009-01-01

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  9. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  10. Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Directory of Open Access Journals (Sweden)

    D. P. Samajdar

    2014-01-01

    Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  11. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

    Energy Technology Data Exchange (ETDEWEB)

    Azam, Sikander; Khan, Saleem Ayaz [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States)

    2015-10-15

    Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

  12. Development of Inexpensive, Efficient and Non-Toxic Thermoelectric Materials

    Science.gov (United States)

    Gali, Anand Pratik

    In the wake of the impending climate change challenges, it is highly necessary to reevaluate our energy utilization technologies and ensure their efficient operation. Fossil fuel powered power-plants account for the majority of the energy production in the United States. With an average efficiency not exceeding 40%, these fossil fuel power plants dissipate exorbitant amounts of wasted heat. One of the ways of making such energy conversion processes more efficient is by incorporating technologies that can harvest this scavenge heat. One of the ways of achieving this is by the use of thermoelectric (TE) materials, which utilize the Seebeck effect to convert thermal gradient into potential difference. Therefore, our research project focusses on development of TE materials, which are inexpensive, efficient, and non-toxic. Fe0.50V0.25Al0.25 is a narrow band-gap semiconductor, ideal for TE applications. Unlike the current market leader Bi0.4Te0.6, Fe0.50V0.25 Al0.25 contains earth abundant and non-toxic constituents making it viable for commercial production. Nevertheless, the TE efficiency, ZT, of Fe0.50V0.25Al0.25 is limited by its high thermal conductivity. Therefore, the goal of the current research is two-fold. Firstly, to design and fabricate apparatus for performing TE characterization on bulk materials. For this purpose, two sets of apparatus were designed and fabricated for measuring high temperature Seebeck coefficient and electrical resistivity. Secondly, to study the influence of doping on TE properties of Fe0.50V0.25Al0.25 alloy. In order to achieve this, vanadium in Fe0.50V0.25Al0.25 was substituted with dopants like Ti, Cr, Zr, W, Nb, Ta. This led to a 20 times improvement in ZT, from the baseline Fe0.50V0.25Al0.25, by effectively reducing the thermal conductivity and increasing the Seebeck coefficient.

  13. Nanoscale thermoelectric materials

    International Nuclear Information System (INIS)

    Failamani, F.

    2015-01-01

    Thermoelectric (TE) materials directly convert thermal energy to electrical energy when subjected to a temperature gradient, whereas if electricity is applied to thermoelectric materials, a temperature gradient is formed. The performance of thermoelectric materials is characterized by a dimensionless figure of merit (ZT = S2T/ρλ), which consists of three parameters, Seebeck coefficient (S), electrical resistivity (ρ) and thermal conductivity (λ). To achieve good performance of thermoelectric power generation and cooling, ZT's of thermoelectric materials must be as high as possible, preferably above unity. This thesis comprises three main parts, which are distributed into six chapters: (i) nanostructuring to improve TE performance of trivalent rare earth-filled skutterudites (chapter 1 and 2), (ii) interactions of skutterudite thermolectrics with group V metals as potential electrode or diffusion barrier for TE devices (chapter 3 and 4), and (iii) search for new materials for TE application (chapter 5 and 6). Addition of secondary phases, especially nano sized phases can cause additional reduction of the thermal conductivity of a filled skutterudite which improves the figure of merit (ZT) of thermoelectric materials. In chapter 1 we investigated the effect of various types of secondary phases (silicides, borides, etc.) on the TE properties of trivalent rare earth filled Sb-based skutterudites as commercially potential TE materials. In this context the possibilty to introduce borides as nano-particles (via ball-milling in terms of a skutterudite/boride composite) is also elucidated in chapter 2. As a preliminary study, crystal structure of novel high temperature FeB-type phases found in the ternary Ta-{Ti,Zr,Hf,}-B systems were investigated. In case of Ti and Hf this phase is the high temperature stabilization of binary group IV metal monoborides, whereas single crystal study of (Ta,Zr)B proves that it is a true ternary phase as no stable monoboride exist in the

  14. Very High Output Thermoelectric Devices Based on ITO Nanocomposites

    Science.gov (United States)

    Fralick, Gustave; Gregory, Otto J.

    2009-01-01

    A material having useful thermoelectric properties was synthesized by combining indium-tin-oxide (ITO) with a NiCoCrAlY alloy/alumina cermet. This material had a very large Seebeck coefficient with electromotive-force-versustemperature behavior that is considered to be excellent with respect to utility in thermocouples and other thermoelectric devices. When deposited in thin-film form, ceramic thermocouples offer advantages over precious-metal (based, variously, on platinum or rhodium) thermocouples that are typically used in gas turbines. Ceramic thermocouples exhibit high melting temperatures, chemical stability at high temperatures, and little or no electromigration. Oxide ceramics also resist oxidation better than metal thermocouples, cost substantially less than precious-metal thermocouples, and, unlike precious-metal thermocouples, do not exert catalytic effects.

  15. Semimetals and the problem of cryogenic thermoelectric cooling

    International Nuclear Information System (INIS)

    Bodiul, P.; Gitsu, D.; Konopko, L.; Nikolaeva, A.; Huber, T.

    2002-01-01

    Reviewed are some specific peculiarities of the electronic transport phenomena in bismuth and its alloys single crystals, the impurity states behaviour and the crystal sizes influence with the purpose to determine the convenient method for the improvement of the thermoelectric efficiency in these materials. High temperature superconductivity has open new possibilities for the development of the cryoelectronics. However, for their realisation, it is essential to obtain low temperatures (T c ∼ 5 mm at T = 4.2 K), and technological parameters, bismuth and its alloys are of a special interest for nanoelectronics. The given paper is a brief review of some specific peculiarities of galvano-thermomagnetic phenomena in the bismuth and its alloys single crystals, behaviour of impurity states and the influence of the crystal sizes. (authors)

  16. Process controls for Bi2Te3-Sb2Te3 prepared by mechanical alloying and hot pressing

    International Nuclear Information System (INIS)

    Lee, Go-Eun; Kim, Il-Ho; Choi, Soon-Mok; Lim, Young-Soo; Seo, Won-Seon; Park, Jae-Soung; Yang, Seung-Ho

    2014-01-01

    p-Type Bi 2 Te 3 -Sb 2 Te 3 solid solutions were prepared by mechanical alloying (MA) and hot pressing (HP) under different process conditions, after which the transport and the thermoelectric properties were evaluated. The relative densities of all hot-pressed specimens were over 98%, and the microstructure and crystal orientation were independent of the HP direction. All specimens exhibited p-type conduction, and the electrical resistivity was observed to increase slightly with increasing temperature, indicating a degenerate semiconductor behavior. The carrier concentration decreased with increasing HP temperature while the mobility increased. The maximum figure of merit obtained was 0.86 at 323 K for Bi 0.5 Sb 1.5 Te 3 hot-pressed at 648 K.

  17. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  18. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  19. Thermoelectric Properties of Cu-doped Bi2-xSbxTe3 Prepared by Encapsulated Melting and Hot Pressing

    Science.gov (United States)

    Jung, Woo-Jin; Kim, Il-Ho

    2018-03-01

    P-type Bi2-xSbxTe3:Cum (x = 1.5-1.7 and m = 0.002-0.003) solid solutions were synthesized using encapsulated melting and were consolidated using hot pressing. The effects of Sb substitution and Cu doping on the charge transport and thermoelectric properties were examined. The lattice constants decreased with increasing Sb and Cu contents. As the amount of Sb substitution and Cu doping was increased, the electrical conductivity increased, and the Seebeck coefficient decreased owing to the increase in the carrier concentration. All specimens exhibited degenerate semiconductor characteristics and positive Hall and Seebeck coefficients, indicating p-type conduction. The increased Sb substitution caused a shift in the onset temperature of the intrinsic transition and bipolar conduction to higher temperatures. The electronic thermal conductivity increased with increasing Sb and Cu contents owing to the increase in the carrier concentration, while the lattice thermal conductivity slightly decreased due to alloy scattering. A maximum figure of merit, ZTmax = 1.25, was achieved at 373 K for Bi0.4Sb1.6Te3:Cu0.003.

  20. Compliant Interfacial Layers in Thermoelectric Devices

    Science.gov (United States)

    Firdosy, Samad A. (Inventor); Li, Billy Chun-Yip (Inventor); Ravi, Vilupanur A. (Inventor); Fleurial, Jean-Pierre (Inventor); Caillat, Thierry (Inventor); Anjunyan, Harut (Inventor)

    2017-01-01

    A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.

  1. Interfacial reactions in thermoelectric modules

    KAUST Repository

    Wu, Hsin-jay; Wu, Albert T.; Wei, Pei-chun; Chen, Sinn-wen

    2018-01-01

    Engineering transport properties of thermoelectric (TE) materials leads to incessantly breakthroughs in the zT values. Nevertheless, modular design holds a key factor to advance the TE technology. Herein, we discuss the structures of TE module

  2. Material parameters for thermoelectric performance

    Indian Academy of Sciences (India)

    The thermoelectric performance of a thermoelement is ideally defined in terms of the so-called ... However, there are other parameters which are fairly good indicators ... Whereas a final deciding factor reflecting on .... matter of a future work.

  3. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  4. Apparatus, System, and Method for On-Chip Thermoelectricity Generation

    KAUST Repository

    Hussain, Muhammad Mustafa

    2012-01-26

    An apparatus, system, and method for a thermoelectric generator. In some embodiments, the thermoelectric generator comprises a first thermoelectric region and a second thermoelectric region, where the second thermoelectric region may be coupled to the first thermoelectric region by a first conductor. In some embodiments, a second conductor may be coupled to the first thermoelectric region and a third conductor may be coupled to the second thermoelectric region. In some embodiments, the first conductor may be in a first plane, the first thermoelectric region and the second thermoelectric region may be in a second plane, and the second conductor and the third conductor may be in a third plane.

  5. Apparatus, System, and Method for On-Chip Thermoelectricity Generation

    KAUST Repository

    Hussain, Muhammad Mustafa; Fahad, Hossain M.; Rojas, Jhonathan Prieto

    2012-01-01

    An apparatus, system, and method for a thermoelectric generator. In some embodiments, the thermoelectric generator comprises a first thermoelectric region and a second thermoelectric region, where the second thermoelectric region may be coupled to the first thermoelectric region by a first conductor. In some embodiments, a second conductor may be coupled to the first thermoelectric region and a third conductor may be coupled to the second thermoelectric region. In some embodiments, the first conductor may be in a first plane, the first thermoelectric region and the second thermoelectric region may be in a second plane, and the second conductor and the third conductor may be in a third plane.

  6. Scandium-doped zinc cadmium oxide as a new stable n-type oxide thermoelectric material

    DEFF Research Database (Denmark)

    Han, Li; Christensen, Dennis Valbjørn; Bhowmik, Arghya

    2016-01-01

    Scandium-doped zinc cadmium oxide (Sc-doped ZnCdO) is proposed as a new n-type oxide thermoelectric material. The material is sintered in air to maintain the oxygen stoichiometry and avoid instability issues. The successful alloying of CdO with ZnO at a molar ratio of 1 : 9 significantly reduced...... is a good candidate for improving the overall conversion efficiencies in oxide thermoelectric modules. Meanwhile, Sc-doped ZnCdO is robust in air at high temperatures, whereas other n-type materials, such as Al-doped ZnO, will experience rapid degradation of their electrical conductivity and ZT....

  7. Encapsulation of high temperature thermoelectric modules

    Energy Technology Data Exchange (ETDEWEB)

    Salvador, James R.; Sakamoto, Jeffrey; Park, Youngsam

    2017-07-11

    A method of encapsulating a thermoelectric device and its associated thermoelectric elements in an inert atmosphere and a thermoelectric device fabricated by such method are described. These thermoelectric devices may be intended for use under conditions which would otherwise promote oxidation of the thermoelectric elements. The capsule is formed by securing a suitably-sized thin-walled strip of oxidation-resistant metal to the ceramic substrates which support the thermoelectric elements. The thin-walled metal strip is positioned to enclose the edges of the thermoelectric device and is secured to the substrates using gap-filling materials. The strip, substrates and gap-filling materials cooperatively encapsulate the thermoelectric elements and exclude oxygen and water vapor from atmospheric air so that the elements may be maintained in an inert, non-oxidizing environment.

  8. Deployable Thermoelectric Metamaterial Energy Harvesting Monitoring System

    Data.gov (United States)

    National Aeronautics and Space Administration — This project will combine a novel asynchronous monitoring system with the first-of-its-kind thermoelectric metamaterial.  The thermoelectric prototype is constructed...

  9. Thermoelectric Devices: Solid-State Refrigerators and Electrical Generators in the Classroom

    Science.gov (United States)

    Winder, Edmund J.; Ellis, Arthur B.; Lisensky, George C.

    1996-10-01

    of merit Z. Figure 6. (a) Generalized dependence of electrical and thermal conductivity and thermopower on the carrier concentration. (b) The resultant dependence of the figure-of-merit, Z, on the carrier concentration. Adapted from Heikes, R. R., and Ure, R. W., Jr. Thermoelectricity: Science and Engineering; Interscicence: New York, 1961; p 20. The greatest Z value is obtained with a carrier concentration between 1018 and 1021 cm-3. This implies that the best thermoelectric materials will be semiconductors with a relatively high carrier concentration. The choice of carrier type is also important. As mentioned above, the direction of both the Seebeck and Peltier effects is reversed depending on whether the carriers are electrons or holes. If both carrier types are present in a material, their effects will work against each other. Semiconductors always contain both carrier types, but often the semiconductor is intentionally laced with impurities ("doped") so that one carrier type is greatly predominant (2). In this case, the semiconductor is said to be extrinsic. Intrinsic semiconductors, on the other hand, have roughly equal numbers of each type of carrier, causing their performance as thermoelectric materials to suffer. Extrinsic semiconductors, then, are the better choice for thermoelectric devices. Researchers are continually trying to increase the efficiency of thermoelectric materials, through the processing of existing materials or the creation of new ones. Strategies to further improve the figure of merit of semiconductors generally involve decreasing the lattice thermal conductivity through a number of techniques that affect the microstructure of the material (4). These include solid-solution alloying of different semiconductors and dispersing inert particles in the semiconductor. Both treatments disrupt the regular ordering of the crystalline grains and decrease the ability of the material to carry heat through lattice vibrations. Put another way, the mean

  10. Semiconductor Nanowire and Nanoribbon Thermoelectrics: A Comprehensive Computational Study

    Science.gov (United States)

    2013-05-01

    August 17-20, 2010). Available online through IEEE Xplore . http://dx.doi.org/10.1109/NANO.2010.5698047 4. Z. Aksamija and I. Knezevic...Korea (August 17-20, 2010). Available online through IEEE Xplore . http://dx.doi.org/10.1109/NANO.2010.5697827 5. D. Vasileska, K. Raleva, S. M...IWCE 2010) Available online through IEEE Xplore , http://dx.doi.org/10.1109/IWCE.2010.5677916 6. E. B. Ramayya and I. Knezevic, “Ultrascaled

  11. Mechanisms of current flow in metal-semiconductor ohmic contacts

    International Nuclear Information System (INIS)

    Blank, T. V.; Gol'dberg, Yu. A.

    2007-01-01

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

  12. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  13. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  14. A lightweight scalable agarose-gel-synthesized thermoelectric composite

    Science.gov (United States)

    Kim, Jin Ho; Fernandes, Gustavo E.; Lee, Do-Joong; Hirst, Elizabeth S.; Osgood, Richard M., III; Xu, Jimmy

    2018-03-01

    Electronic devices are now advancing beyond classical, rigid systems and moving into lighweight flexible regimes, enabling new applications such as body-wearables and ‘e-textiles’. To support this new electronic platform, composite materials that are highly conductive yet scalable, flexible, and wearable are needed. Materials with high electrical conductivity often have poor thermoelectric properties because their thermal transport is made greater by the same factors as their electronic conductivity. We demonstrate, in proof-of-principle experiments, that a novel binary composite can disrupt thermal (phononic) transport, while maintaining high electrical conductivity, thus yielding promising thermoelectric properties. Highly conductive Multi-Wall Carbon Nanotube (MWCNT) composites are combined with a low-band gap semiconductor, PbS. The work functions of the two materials are closely matched, minimizing the electrical contact resistance within the composite. Disparities in the speed of sound in MWCNTs and PbS help to inhibit phonon propagation, and boundary layer scattering at interfaces between these two materials lead to large Seebeck coefficient (> 150 μV/K) (Mott N F and Davis E A 1971 Electronic Processes in Non-crystalline Materials (Oxford: Clarendon), p 47) and a power factor as high as 10 μW/(K2 m). The overall fabrication process is not only scalable but also conformal and compatible with large-area flexible hosts including metal sheets, films, coatings, possibly arrays of fibers, textiles and fabrics. We explain the behavior of this novel thermoelectric material platform in terms of differing length scales for electrical conductivity and phononic heat transfer, and explore new material configurations for potentially lightweight and flexible thermoelectric devices that could be networked in a textile.

  15. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  16. Thermoelectric characterization of Sb{sub 2}Te{sub 3} thin films deposited by ALD

    Energy Technology Data Exchange (ETDEWEB)

    Zastrow, Sebastian; Schumacher, Christian; Nielsch, Kornelius [University of Hamburg (Germany); Regus, Matthias [University of Kiel (Germany); Schulz, Stephan [University of Duisburg-Essen (Germany)

    2012-07-01

    Thermoelectric materials can be used as temperature sensors or peltier cooling devices as well as to recover a part of the massive losses of energy due to the waste heat generated in fossil-fuel driven power plants and vehicles. Antimony Telluride (Sb{sub 2}Te{sub 3}) is a p-doped semiconductor and in the focus of interest for room temperature applications because of its thermoelectric peak performance at around 350 K. However, thermoelectric properties of Sb{sub 2}Te{sub 3} ALD thin films have not been reported yet. Based on the work of Pore et al., Sb{sub 2}Te{sub 3} is deposited with a home-made reactor on SiO{sub 2} by using (Et{sub 3}Si){sub 2}Te and SbCl{sub 3}. The surface roughness as well as the growth rate depend strongly on the deposition temperature as reported by Cu et al. To check the preferential growth directions and the composition, XRD and EDX measurements are carried out. The thermoelectric properties are influenced by the deposition parameters. Therefore, spatial scans of the Seebeck coefficient are performed and the electrical resistivity is measured. In order to enhance the thermoelectric performance, a first optimization by short annealing processes is done under helium atmosphere up to 570 K. The authors would like to thank the ''Karl-Vossloh-Stiftung''.

  17. Thermoelectric conversion at the divertor plates and the first wall of a fusion reactor

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, S. [National Inst. for Fusion Science, Nagoya (Japan); Sagara, A. [National Inst. for Fusion Science, Nagoya (Japan); Komori, A. [National Inst. for Fusion Science, Nagoya (Japan); Tazima, T. [National Inst. for Fusion Science, Nagoya (Japan); Motojima, O. [National Inst. for Fusion Science, Nagoya (Japan); Iiyoshi, A. [National Inst. for Fusion Science, Nagoya (Japan); Matsubara, K. [National Inst. for Fusion Science, Nagoya (Japan)]|[Yamaguchi Univ. (Japan); Onozuka, M. [National Inst. for Fusion Science, Nagoya (Japan)]|[Mitsubishi Heavy Industries Ltd. (Japan); Koganezawa, K. [National Inst. for Fusion Science, Nagoya (Japan)]|[Mitsubishi Heavy Industries Ltd. (Japan); Matsuda, T. [National Inst. for Fusion Science, Nagoya (Japan)]|[Toyo Tanso Co. Ltd. (Japan)

    1995-12-31

    We investigated thermoelectric conversion on the first wall and the divertor plates. Carbon, B{sub 4}C, and other carbon-based materials were tested as components of a thermoelectric element. The heat flux from the plasma was assumed to be 400 kW/m{sup 2}, and the cooling side temperature the fixed design parameter of either 350 K or 650 K. While differential radiation cooling was not considered in this study, a computer programme was used to estimate the distribution of temperature and thermal stress over the thermoelectric element. The three-legged element was conceived to be 20 cm long and 12 cm wide. The temperature in its arches reached almost 2500 K, and the maximal thermal stress was 80 MPa - still within the acceptable range for the ITER design parameter. The high thermoelectric power of B{sub 4}C accounts for the thermal efficiency of 2.8% (for 650 K) or 3.3% (for 350 K). If we find an N-type semi-conductor material with the same high absolute value as B{sub 4}C to replace carbon, the efficiency will improve to 9.4% (for 650 K) or 11% (for 350 K). Since plasma is a current-conducting medium, we discuss aspects of a plasma-connected thermoelectric element. Its efficiency would depend on the connection length of magnetic field and plasma parameters near the wall. (orig.).

  18. Semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  19. Modeling of interface roughness in thermoelectric composite materials

    International Nuclear Information System (INIS)

    Gather, F; Heiliger, C; Klar, P J

    2011-01-01

    We use a network model to calculate the influence of the mesoscopic interface structure on the thermoelectric properties of superlattice structures consisting of alternating layers of materials A and B. The thermoelectric figure of merit of such a composite material depends on the layer thickness, if interface resistances are accounted for, and can be increased by proper interface design. In general, interface roughness reduces the figure of merit, again compared to the case of ideal interfaces. However, the strength of this reduction depends strongly on the type of interface roughness. Smooth atomic surface diffusion leading to alloying of materials A and B causes the largest reduction of the figure of merit. Consequently, in real structures, it is important not only to minimize interface roughness, but also to control the type of roughness. Although the microscopic effects of interfaces are only empirically accounted for, using a network model can yield useful information about the dependence of the macroscopic transport coefficients on the mesoscopic disorder in structured thermoelectric materials.

  20. Conductivity-limiting bipolar thermal conductivity in semiconductors

    Science.gov (United States)

    Wang, Shanyu; Yang, Jiong; Toll, Trevor; Yang, Jihui; Zhang, Wenqing; Tang, Xinfeng

    2015-01-01

    Intriguing experimental results raised the question about the fundamental mechanisms governing the electron-hole coupling induced bipolar thermal conduction in semiconductors. Our combined theoretical analysis and experimental measurements show that in semiconductors bipolar thermal transport is in general a “conductivity-limiting” phenomenon, and it is thus controlled by the carrier mobility ratio and by the minority carrier partial electrical conductivity for the intrinsic and extrinsic cases, respectively. Our numerical method quantifies the role of electronic band structure and carrier scattering mechanisms. We have successfully demonstrated bipolar thermal conductivity reduction in doped semiconductors via electronic band structure modulation and/or preferential minority carrier scatterings. We expect this study to be beneficial to the current interests in optimizing thermoelectric properties of narrow gap semiconductors. PMID:25970560

  1. Simple experiments with a thermoelectric module

    International Nuclear Information System (INIS)

    Kraftmakher, Yaakov

    2005-01-01

    The Seebeck and Peltier effects are explored with a commercially available thermoelectric module and a data-acquisition system. Five topics are presented: (i) thermoelectric heating and cooling, (ii) the Seebeck coefficient, (iii) efficiency of a thermoelectric generator, (iv) the maximum temperature difference provided by a thermoelectric cooler and (v) the Peltier coefficient and the coefficient of performance. Using a data-acquisition system, the measurements are carried out in a reasonably short time. It is shown how to deduce quantities important for the theory and applications of thermoelectric devices

  2. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  3. Thermoelectricity for future sustainable energy technologies

    Directory of Open Access Journals (Sweden)

    Weidenkaff Anke

    2017-01-01

    Full Text Available Thermoelectricity is a general term for a number of effects describing the direct interconversion of heat and electricity. Thermoelectric devices are therefore promising, environmental-friendly alternatives to conventional power generators or cooling units. Since the mid-90s, research on thermoelectric properties and their applications has steadily increased. In the course of years, the development of high-temperature resistant TE materials and devices has emerged as one of the main areas of interest focusing both on basic research and practical applications. A wide range of innovative and cost-efficient material classes has been studied and their properties improved. This has also led to advances in synthesis and metrology. The paper starts out with thermoelectric history, basic effects underlying thermoelectric conversion and selected examples of application. The main part focuses on thermoelectric materials including an outline of the design rules, a review on the most common materials and the feasibility of improved future high-temperature thermoelectric converters.

  4. Apparatuses And Systems For Embedded Thermoelectric Generators

    KAUST Repository

    Hussain, Muhammad M.

    2013-08-08

    An apparatus and a system for embedded thermoelectric generators are disclosed. In one embodiment, the apparatus is embedded in an interface where the ambient temperatures on two sides of the interface are different. In one embodiment, the apparatus is fabricated with the interface in integrity as a unitary piece. In one embodiment, the apparatus includes a first thermoelectric material embedded through the interface. The apparatus further includes a second thermoelectric material embedded through the interface. The first thermoelectric material is electrically coupled to the second thermoelectric material. In one embodiment, the apparatus further includes an output structure coupled to the first thermoelectric material and the second thermoelectric material and configured to output a voltage.

  5. Apparatuses And Systems For Embedded Thermoelectric Generators

    KAUST Repository

    Hussain, Muhammad M.; Inayat, Salman Bin; Smith, Casey Eben

    2013-01-01

    An apparatus and a system for embedded thermoelectric generators are disclosed. In one embodiment, the apparatus is embedded in an interface where the ambient temperatures on two sides of the interface are different. In one embodiment, the apparatus is fabricated with the interface in integrity as a unitary piece. In one embodiment, the apparatus includes a first thermoelectric material embedded through the interface. The apparatus further includes a second thermoelectric material embedded through the interface. The first thermoelectric material is electrically coupled to the second thermoelectric material. In one embodiment, the apparatus further includes an output structure coupled to the first thermoelectric material and the second thermoelectric material and configured to output a voltage.

  6. Thermoelectric refrigerator having improved temperature stabilization means

    International Nuclear Information System (INIS)

    Falco, C.M.

    1982-01-01

    A control system for thermoelectric refrigerators is disclosed. The thermoelectric refrigerator includes at least one thermoelectric element that undergoes a first order change at a predetermined critical temperature. The element functions as a thermoelectric refrigerator element above the critical temperature, but discontinuously ceases to function as a thermoelectric refrigerator element below the critical temperature. One example of such an arrangement includes thermoelectric refrigerator elements which are superconductors. The transition temperature of one of the superconductor elements is selected as the temperature control point of the refrigerator. When the refrigerator attempts to cool below the point, the metals become superconductors losing their ability to perform as a thermoelectric refrigerator. An extremely accurate, first-order control is realized

  7. The Physics of Semiconductors An Introduction Including Devices and Nanophysics

    CERN Document Server

    Grundmann, Marius

    2006-01-01

    The Physics of Semiconductors provides material for a comprehensive upper-level-undergrauate and graduate course on the subject, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. For the interested reader some additional advanced topics are included, such as Bragg mirrors, resonators, polarized and magnetic semiconductors are included. Also supplied are explicit formulas for many results, to support better understanding. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from ...

  8. Semiconductor Nanowires and Nanotubes for Energy Conversion

    Science.gov (United States)

    Fardy, Melissa Anne

    In recent years semiconductor nanowires and nanotubes have garnered increased attention for their unique properties. With their nanoscale dimensions comes high surface area and quantum confinement, promising enhancements in a wide range of applications. 1-dimensional nanostructures are especially attractive for energy conversion applications where photons, phonons, and electrons come into play. Since the bohr exciton radius and phonon and electron mean free paths are on the same length scales as nanowire diameters, optical, thermal, and electrical properties can be tuned by simple nanowire size adjustments. In addition, the high surface area inherent to nanowires and nanotubes lends them towards efficient charge separation and superior catalytic performance. In thermoelectric power generation, the nanoscale wire diameter can effectively scatter phonons, promoting reductions in thermal conductivity and enhancements in the thermoelectric figure of merit. To that end, single-crystalline arrays of PbS, PbSe, and PbTe nanowires have been synthesized by a chemical vapor transport approach. The electrical and thermal transport properties of the nanowires were characterized to investigate their potential as thermoelectric materials. Compared to bulk, the lead chalcogenide nanowires exhibit reduced thermal conductivity below 100 K by up to 3 orders of magnitude, suggesting that they may be promising thermoelectric materials. Smaller diameters and increased surface roughness are expected to give additional enhancements. The solution-phase synthesis of PbSe nanowires via oriented attachment of nanoparticles enables facile surface engineering and diameter control. Branched PbSe nanowires synthesized by this approach showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the Pb

  9. Nanostructured layers of thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Urban, Jeffrey J.; Lynch, Jared; Coates, Nelson; Forster, Jason; Sahu, Ayaskanta; Chabinyc, Michael; Russ, Boris

    2018-01-30

    This disclosure provides systems, methods, and apparatus related to thermoelectric materials. In one aspect, a method includes providing a plurality of nanostructures. The plurality of nanostructures comprise a thermoelectric material, with each nanostructure of the plurality of nanostructures having first ligands disposed on a surface of the nanostructure. The plurality of nanostructures is mixed with a solution containing second ligands and a ligand exchange process occurs in which the first ligands disposed on the plurality of nanostructures are replaced with the second ligands. The plurality of nanostructures is deposited on a substrate to form a layer. The layer is thermally annealed.

  10. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  11. The Effects of Doping and Processing on the Thermoelectric Properties of Platinum Diantimonide Based Materials for Cryogenic Peltier Cooling Applications

    Science.gov (United States)

    Waldrop, Spencer Laine

    The study of thermoelectrics is nearly two centuries old. In that time a large number of applications have been discovered for these materials which are capable of transforming thermal energy into electricity or using electrical work to create a thermal gradient. Current use of thermoelectric materials is in very niche applications with contemporary focus being upon their capability to recover waste heat. A relatively undeveloped region for thermoelectric application is focused upon Peltier cooling at low temperatures. Materials based on bismuth telluride semiconductors have been the gold standard for close to room temperature applications for over sixty years. For applications below room temperature, semiconductors based on bismuth antimony reign supreme with few other possible materials. The cause of this diculty in developing new, higher performing materials is due to the interplay of the thermoelectric properties of these materials. The Seebeck coecient, which characterizes the phenomenon of the conversion of heat to electricity, the electrical conductivity, and the thermal conductivity are all interconnected properties of a material which must be optimized to generate a high performance thermoelectric material. While for above room temperature applications many advancements have been made in the creation of highly ecient thermoelectric materials, the below room temperature regime has been stymied by ill-suited properties, low operating temperatures, and a lack of research. The focus of this work has been to investigate and optimize the thermoelectric properties of platinum diantimonide, PtSb2, a nearly zero gap semiconductor. The electronic properties of PtSb2 are very favorable for cryogenic Peltier applications, as it exhibits good conductivity and large Seebeck coecient below 200 K. It is shown that both n- and p-type doping may be applied to this compound to further improve its electronic properties. Through both solid solution formation and processing

  12. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  13. Concentrated Solar Thermoelectric Power

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Gang [MIT; Ren, Zhifeng [University of Houston

    2015-07-09

    The goal of this project is to demonstrate in the lab that solar thermoelectric generators (STEGs) can exceed 10% solar-to-electricity efficiency, and STEGs can be integrated with phase-change materials (PCM) for thermal storage, providing operation beyond daylight hours. This project achieved significant progress in many tasks necessary to achieving the overall project goals. An accurate Themoelectric Generator (TEG) model was developed, which included realistic treatment of contact materials, contact resistances and radiative losses. In terms of fabricating physical TEGs, high performance contact materials for skutterudite TE segments were developed, along with brazing and soldering methods to assemble segmented TEGs. Accurate measurement systems for determining device performance (in addition to just TE material performance) were built for this project and used to characterize our TEGs. From the optical components’ side, a spectrally selective cermet surface was developed with high solar absorptance and low thermal emittance, with thermal stability at high temperature. A measurement technique was also developed to determine absorptance and total hemispherical emittance at high temperature, and was used to characterize the fabricated spectrally selective surfaces. In addition, a novel reflective cavity was designed to reduce radiative absorber losses and achieve high receiver efficiency at low concentration ratios. A prototype cavity demonstrated that large reductions in radiative losses were possible through this technique. For the overall concentrating STEG system, a number of devices were fabricated and tested in a custom built test platform to characterize their efficiency performance. Additionally, testing was performed with integration of PCM thermal storage, and the storage time of the lab scale system was evaluated. Our latest testing results showed a STEG efficiency of 9.6%, indicating promising potential for high performance concentrated STEGs.

  14. Room-temperature ductile inorganic semiconductor

    Science.gov (United States)

    Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

    2018-05-01

    Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

  15. X-ray absorption spectroscopy of semiconductors

    CERN Document Server

    Ridgway, Mark

    2015-01-01

    X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

  16. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  17. Material parameters for thermoelectric performance

    Indian Academy of Sciences (India)

    The thermoelectric performance of a thermoelement is ideally defined in terms of the so-called figure-of-merit = 2 / , where , and refer respectively to the Seebeck coefficient, electrical conductivity and thermal conductivity of the thermoelement material. However, there are other parameters which are fairly good ...

  18. High Performance Bulk Thermoelectric Materials

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Zhifeng [Boston College, Chestnut Hill, MA (United States)

    2013-03-31

    Over 13 plus years, we have carried out research on electron pairing symmetry of superconductors, growth and their field emission property studies on carbon nanotubes and semiconducting nanowires, high performance thermoelectric materials and other interesting materials. As a result of the research, we have published 104 papers, have educated six undergraduate students, twenty graduate students, nine postdocs, nine visitors, and one technician.

  19. Thermoelectric effects in magnetic nanostructures

    NARCIS (Netherlands)

    Hatami, Moosa; Bauer, Gerrit E.W.; Zhang, Q.F.; Kelly, Paul J.

    2009-01-01

    We model and evaluate the Peltier and Seebeck effects in magnetic multilayer nanostructures by a finite-element theory of thermoelectric properties. We present analytical expressions for the thermopower and the current-induced temperature changes due to Peltier cooling/heating. The thermopower of a

  20. Metallization for Yb14MnSb11-Based Thermoelectric Materials

    Science.gov (United States)

    Firdosy, Samad; Li, Billy Chun-Yip; Ravi, Vilupanur; Sakamoto, Jeffrey; Caillat, Thierry; Ewell, Richard C.; Brandon, Erik J.

    2011-01-01

    Thermoelectric materials provide a means for converting heat into electrical power using a fully solid-state device. Power-generating devices (which include individual couples as well as multicouple modules) require the use of ntype and p-type thermoelectric materials, typically comprising highly doped narrow band-gap semiconductors which are connected to a heat collector and electrodes. To achieve greater device efficiency and greater specific power will require using new thermoelectric materials, in more complex combinations. One such material is the p-type compound semiconductor Yb14MnSb11 (YMS), which has been demonstrated to have one of the highest ZT values at 1,000 C, the desired operational temperature of many space-based radioisotope thermoelectric generators (RTGs). Despite the favorable attributes of the bulk YMS material, it must ultimately be incorporated into a power-generating device using a suitable joining technology. Typically, processes such as diffusion bonding and/or brazing are used to join thermoelectric materials to the heat collector and electrodes, with the goal of providing a stable, ohmic contact with high thermal conductivity at the required operating temperature. Since YMS is an inorganic compound featuring chemical bonds with a mixture of covalent and ionic character, simple metallurgical diffusion bonding is difficult to implement. Furthermore, the Sb within YMS readily reacts with most metals to form antimonide compounds with a wide range of stoichiometries. Although choosing metals that react to form high-melting-point antimonides could be employed to form a stable reaction bond, it is difficult to limit the reactivity of Sb in YMS such that the electrode is not completely consumed at an operating temperature of 1,000 C. Previous attempts to form suitable metallization layers resulted in poor bonding, complete consumption of the metallization layer or fracture within the YMS thermoelement (or leg).

  1. Proceedings of wide band gap semiconductors

    International Nuclear Information System (INIS)

    Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

    1992-01-01

    This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

  2. Digital Alloy Absorber for Photodetectors

    Science.gov (United States)

    Hill, Cory J. (Inventor); Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor)

    2016-01-01

    In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

  3. Optimized thermoelectric performance of the n-type half-Heusler material TiNiSn by substitution and addition of Mn

    Directory of Open Access Journals (Sweden)

    Enkhtaivan Lkhagvasuren

    2017-04-01

    Full Text Available Alloys based on the half-Heusler compound TiNiSn with the addition of Mn or with a substitution of Ti by Mn are investigated as high-temperature thermoelectric materials. In both materials an intrinsic phase separation is observed, similar to TiNiSn where Ti has been partially substituted by Hf, with increasing Mn concentration the phase separation drastically reduces the lattice thermal conductivity while the power factor is increased. The thermoelectric performance of the n-type conducting alloy can be optimized both by substitution of Ti by Mn as well as the addition of Mn.

  4. Enhancement in figure-of-merit with superlattices structures for thin-film thermoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R; Colpitts, T

    1997-07-01

    Thin-film superlattice (SL) structures in thermoelectric materials are shown to be a promising approach to obtaining an enhanced figure-of-merit, ZT, compared to conventional, state-of-the-art bulk alloyed materials. In this paper the authors describe experimental results on Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures, relevant to thermoelectric cooling and power conversion, respectively. The short-period Bi{sub 2}Te{sub 3} and Si/Ge SL structures appear to indicate reduced thermal conductivities compared to alloys of these materials. From the observed behavior of thermal conductivity values in the Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} SL structures, a distinction is made where certain types of periodic structures may correspond to an ordered alloy rather than an SL, and therefore, do not offer a significant reduction in thermal conductivity values. The study also indicates that SL structures, with little or weak quantum-confinement, also offer an improvement in thermoelectric power factor over conventional alloys. They present power factor and electrical transport data in the plane of the SL interfaces to provide preliminary support for the arguments on reduced alloy scattering and impurity scattering in Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures. These results, though tentative due to the possible role of the substrate and the developmental nature of the 3-{omega} method used to determine thermal conductivity values, suggest that the short-period SL structures potentially offer factorial improvements in the three-dimensional figure-of-merit (ZT3D) compared to current state-of-the-art bulk alloys. An approach to a thin-film thermoelectric device called a Bipolarity-Assembled, Series-Inter-Connected Thin-Film Thermoelectric Device (BASIC-TFTD) is introduced to take advantage of these thin-film SL structures.

  5. Microwave plasma synthesis of Si/Ge and Si/WSi2 nanoparticles for thermoelectric applications

    Science.gov (United States)

    Petermann, Nils; Schneider, Tom; Stötzel, Julia; Stein, Niklas; Weise, Claudia; Wlokas, Irenäus; Schierning, Gabi; Wiggers, Hartmut

    2015-08-01

    The utilization of microwave-based plasma systems enables a contamination-free synthesis of highly specific nanoparticles in the gas phase. A reactor setup allowing stable, long-term operation was developed with the support of computational fluid dynamics. This paper highlights the prospects of gas-phase plasma synthesis to produce specific materials for bulk thermoelectrics. Taking advantage of specific plasma reactor properties such as Coulomb repulsion in combination with gas temperatures considerably higher than 1000 K, spherical and non-aggregated nanoparticles of multiple compositions are accessible. Different strategies towards various nanostructured composites and alloys are discussed. It is shown that, based on doped silicon/germanium alloys and composites, thermoelectric materials with zT values up to almost unity can be synthesized in one step. First experimental results concerning silicon/tungsten silicide thermoelectrics applying the nanoparticle-in-alloy idea are presented indicating that this concept might work. However, it is found that tungsten silicides show a surprising sinter activity more than 1000 K below their melting temperature.

  6. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  7. Investigation of mesoporous structures for thermoelectric applications

    International Nuclear Information System (INIS)

    Cojocaru, A.; Carstensen, J.; Foell, H.; Boor, J.; Schmidt, V.

    2011-01-01

    Mesoporous silicon is an attractive material for thermoelectric application. For pore wall thicknesses around <100 nm, phonons can not penetrate the porous layer while electrons still can, due to there smaller mean free path length. The resulting good electrical and bad thermal conductivity is a premise for efficient thermoelectric devices. This paper presents results regarding homogeneity, high porosity, and optimal pore wall thicknesses for porous silicon based thermoelectric devices.

  8. Alkaline earth lead and tin compounds Ae2Pb, Ae2Sn, Ae = Ca, Sr, Ba, as thermoelectric materials

    Directory of Open Access Journals (Sweden)

    David Parker and David J Singh

    2013-01-01

    Full Text Available We present a detailed theoretical study of three alkaline earth compounds Ca2Pb, Sr2Pb and Ba2Pb, which have undergone little previous study, calculating electronic band structures and Boltzmann transport and bulk moduli using density functional theory. We also study the corresponding tin compounds Ca2Sn, Sr2Sn and Ba2Sn. We find that these are all narrow band gap semiconductors with an electronic structure favorable for thermoelectric performance, with substantial thermopowers for the lead compounds at temperature ranges from 300 to 800 K. For the lead compounds, we further find very low calculated bulk moduli—roughly half of the values for the lead chalcogenides, suggestive of soft phonons and hence low lattice thermal conductivity. All these facts indicate that these materials merit experimental investigation as potential high performance thermoelectrics. We find good potential for thermoelectric performance in the environmentally friendly stannide materials, particularly at high temperature.

  9. Alkaline earth lead and tin compounds Ae2Pb, Ae2Sn, Ae = Ca, Sr, Ba, as thermoelectric materials

    Science.gov (United States)

    Parker, David; Singh, David J

    2013-01-01

    We present a detailed theoretical study of three alkaline earth compounds Ca2Pb, Sr2Pb and Ba2Pb, which have undergone little previous study, calculating electronic band structures and Boltzmann transport and bulk moduli using density functional theory. We also study the corresponding tin compounds Ca2Sn, Sr2Sn and Ba2Sn. We find that these are all narrow band gap semiconductors with an electronic structure favorable for thermoelectric performance, with substantial thermopowers for the lead compounds at temperature ranges from 300 to 800 K. For the lead compounds, we further find very low calculated bulk moduli—roughly half of the values for the lead chalcogenides, suggestive of soft phonons and hence low lattice thermal conductivity. All these facts indicate that these materials merit experimental investigation as potential high performance thermoelectrics. We find good potential for thermoelectric performance in the environmentally friendly stannide materials, particularly at high temperature. PMID:27877610

  10. Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

    Directory of Open Access Journals (Sweden)

    James (Zi-Jian Ju

    2016-04-01

    Full Text Available The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga < 0.2 yields a more than 10-fold reduction in thermal conductivity (κ without deteriorating electrical conductivity (σ, while the Seebeck coefficient (S increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga = 0.1 with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K, and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.

  11. Investigation of Nanophase Materials for Thermoelectric Applications

    National Research Council Canada - National Science Library

    Stokes, Kevin

    2004-01-01

    .... We have also made contributions to new, pressure-dependent thermoelectric transport measurement techniques and chemical techniques for creating ordered nanoparticle assemblies consisting of two different nanoparticle materials.

  12. Optimal operation of thermoelectric cooler driven by solar thermoelectric generator

    International Nuclear Information System (INIS)

    Khattab, N.M.; El Shenawy, E.T.

    2006-01-01

    The possibility of using a solar thermoelectric generator (TEG) to drive a small thermoelectric cooler (TEC) is studied in the present work. The study includes the theory of both the TEG and the TEC, giving special consideration to determination of the number of TEG modules required to power the TEC to achieve the best performance of the TEG-TEC system all year round. Commercially available thermoelectric modules (TE) are used in the system. The TEG contains 49 thermocouples and the TEC contains 127 thermocouples. A simple arrangement of plane reflectors that are designed to receive maximum solar energy during noon time is used to heat the TEG. Performance tests are conducted to determine both the physical properties and the performance curves of the available TE modules. Also, empirical relations describing the performance of the TEG and TEC modules have been established. These relations are used to develop a mathematical model simulating the TEG-TEC system to predict its performance all year round under the actual climatic conditions of Cairo, Egypt (30 deg. N latitude). The model results are used to determine the number of TEG modules required to drive a single TEC module at maximum cooling capacity. The results show that five thermocouples of the TEG can drive one thermocouple of the TEC, which coincides with the previous theory of the TEG-TEC. This means that 10 of the used TEG modules are required to power the used TEC at optimum performance most times of the year

  13. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  14. Analysis Of Power Characteristics Of Model Thermoelectric Generator TEG Small Modular

    Directory of Open Access Journals (Sweden)

    Kisman H. Mahmud

    2017-04-01

    Full Text Available Thermoelectrically Generator TEG can generate electricity from the temperature difference between hot and cold at the junction thermoelectric module with two different semiconductor materials there will be a flow of current through the junction so as to produce a voltage. This principle uses the Seebeck effect thermoelectric generator as a base. By using these principles this research was conducted to determine the potential of the electric energy of the two peltier modules which would be an alternative source for mobile charger using heat from source of methylated. The focus in this research is the testing of the model TEG Thermoelectric Generator Small Modular to generate power with a variety of different materials of 4 namely Bi2Te3 Bismuth Telluride PbTe-Bite CMO and CMO Cascade-32-62S-32-62S Calcium Mangan oxide to use the cold side heat sink and a fan to simulate heat aluminum plate attached to the hot side of the TEG modules with heat source of methylated. Test results on the TEG Small Modular Model for mobile charger output voltage obtained from 2 pieces Bi2Te3 module Bismuth Telluride Peltier strung together a series of 3.01 Volt with amp916T of 22.7 C which produce power of 0.091 Watt.

  15. Enhanced thermoelectric efficiency via orthogonal electrical and thermal conductances in phosphorene.

    Science.gov (United States)

    Fei, Ruixiang; Faghaninia, Alireza; Soklaski, Ryan; Yan, Jia-An; Lo, Cynthia; Yang, Li

    2014-11-12

    Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy and are highly desirable for the development of portable, solid state, passively powered electronic systems. The conversion efficiencies of such devices are quantified by the dimensionless thermoelectric figure of merit (ZT), which is proportional to the ratio of a device's electrical conductance to its thermal conductance. In this paper, a recently fabricated two-dimensional (2D) semiconductor called phosphorene (monolayer black phosphorus) is assessed for its thermoelectric capabilities. First-principles and model calculations reveal not only that phosphorene possesses a spatially anisotropic electrical conductance, but that its lattice thermal conductance exhibits a pronounced spatial-anisotropy as well. The prominent electrical and thermal conducting directions are orthogonal to one another, enhancing the ratio of these conductances. As a result, ZT may reach the criterion for commercial deployment along the armchair direction of phosphorene at T = 500 K and is close to 1 even at room temperature given moderate doping (∼2 × 10(16) m(-2) or 2 × 10(12) cm(-2)). Ultimately, phosphorene hopefully stands out as an environmentally sound thermoelectric material with unprecedented qualities. Intrinsically, it is a mechanically flexible material that converts heat energy with high efficiency at low temperatures (∼300 K), one whose performance does not require any sophisticated engineering techniques.

  16. Thermoelectric properties of doped BaHfO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Dixit, Chandra Kr., E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Dr. Shakuntala Misra National Rehabilitation University, Lucknow-229001, U.P India (India); Bhamu, K. C. [Department of Physics, Goa University, Goa-403 206 (India); Sharma, Ramesh, E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Feroze Gandhi Institute of Engineering & Technology, Raebareli-229001, U.P India (India)

    2016-05-06

    We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO{sub 3} by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO{sub 3} doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO{sub 3} is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO{sub 3} is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

  17. Thermoelectric effects of amorphous Ga-Sn-O thin film

    Science.gov (United States)

    Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

    2017-07-01

    The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

  18. Performance estimation of photovoltaic–thermoelectric hybrid systems

    International Nuclear Information System (INIS)

    Zhang, Jin; Xuan, Yimin; Yang, Lili

    2014-01-01

    A theoretical model for evaluating the efficiency of concentrating PV–TE (photovoltaic–thermoelectric) hybrid system is developed in this paper. Hybrid systems with different photovoltaic cells are studied, including crystalline silicon photovoltaic cell, silicon thin-film photovoltaic cell, polymer photovoltaic cell and copper indium gallium selenide photovoltaic cell. The influence of temperature on the efficiency of photovoltaic cell has been taken into account based on the semiconductor equations, which reveals different efficiency temperature characteristic of polymer photovoltaic cells. It is demonstrated that the polycrystalline silicon thin-film photovoltaic cell is suitable for concentrating PV–TE hybrid system through optimization of the convection heat transfer coefficient and concentrating ratio. The polymer photovoltaic cell is proved to be suitable for non-concentrating PV–TE hybrid system. - Highlights: • Performances of four types of photovoltaic–thermoelectric hybrid systems are studied. • Temperature is one of dominant factors of affecting the conversion efficiency of PV–TE systems. • One can select a proper PV–TE assembly system according to given operating conditions

  19. Variation of equation of state parameters in the Mg2(Si 1-xSnx) alloys

    KAUST Repository

    Pulikkotil, Jiji Thomas Joseph; Alshareef, Husam N.; Schwingenschlö gl, Udo

    2010-01-01

    Thermoelectric performance peaks up for intermediate Mg2(Si 1-x:Snx) alloys, but not for isomorphic and isoelectronic Mg2(Si1-xGex) alloys. A comparative study of the equation of state parameters is performed using density functional theory, Green

  20. On the resistivity of metal-tellurium alloys for low concentrations of tellurium

    International Nuclear Information System (INIS)

    Gorecki, J.

    1982-04-01

    The resistivity and thermoelectric power of metal-tellurium liquid alloys have been discussed for the case of small tellurium concentration. Nearly free electron model of conduction band has been used. The rapid increase of resistivity in transition metal-tellurium alloys has been predicted. (author)

  1. Thermoelectric single-photon detector

    International Nuclear Information System (INIS)

    Kuzanyan, A A; Petrosyan, V A; Kuzanyan, A S

    2012-01-01

    The ability to detect a single photon is the ultimate level of sensitivity in the measurement of optical radiation. Sensors capable of detecting single photons and determining their energy have many scientific and technological applications. Kondo-enhanced Seebeck effect cryogenic detectors are based on thermoelectric heat-to-voltage conversion and voltage readout. We evaluate the prospects of CeB 6 and (La,Ce)B 6 hexaboride crystals for their application as a sensitive element in this type of detectors. We conclude that such detectors can register a single UV photon, have a fast count rate (up to 45 MHz) and a high spectral resolution of 0.1 eV. We calculate the electric potential generated along the thermoelectric sensor upon registering a UV single photon.

  2. Multifold Seebeck increase in RuO2 films by quantum-guided lanthanide dilute alloying

    International Nuclear Information System (INIS)

    Music, Denis; Basse, Felix H.-U.; Schneider, Jochen M.; Han, Liang; Borca-Tasciuc, Theo; Devender; Gengler, Jamie J.; Voevodin, Andrey A.; Ramanath, Ganpati

    2014-01-01

    Ab initio predictions indicating that alloying RuO 2 with La, Eu, or Lu can increase the Seebeck coefficient α manifold due to quantum confinement effects are validated in sputter-deposited La-alloyed RuO 2 films showing fourfold α increase. Combinatorial screening reveals that α enhancement correlates with La-induced lattice distortion, which also decreases the thermal conductivity twentyfold, conducive for high thermoelectric figures of merit. These insights should facilitate the rational design of high efficiency oxide-based thermoelectrics through quantum-guided alloying

  3. Thermoelectric coolers as power generators

    International Nuclear Information System (INIS)

    Burke, E.J.; Buist, R.J.

    1984-01-01

    There are many applications where thermoelectric (TE) coolers can be used effectively as power generators. The literature available on this subject is scarce and very limited in scope. This paper describes the configuration, capability, limitations and performance of TE coolers to be used as power generators. Also presented are performance curves enabling the user to design the optimum TE module for any given power generation application

  4. Ab initio study of thermoelectric properties of doped SnO{sub 2} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pdborges@gmail.com [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J. [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Scolfaro, L. [Department of Physics, Texas State University, 78666 San Marcos, TX (United States)

    2015-11-15

    Transparent conductive oxides, such as tin dioxide (SnO{sub 2}), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO{sub 2}, as well as of Sb and Zn planar (or delta)-doped layers in SnO{sub 2} forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO{sub 2} SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO{sub 2}-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO{sub 2} superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

  5. Ab initio study of thermoelectric properties of doped SnO_2 superlattices

    International Nuclear Information System (INIS)

    Borges, P.D.; Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J.; Scolfaro, L.

    2015-01-01

    Transparent conductive oxides, such as tin dioxide (SnO_2), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO_2, as well as of Sb and Zn planar (or delta)-doped layers in SnO_2 forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO_2 SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO_2-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO_2 superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

  6. Thermoelectric behavior of conducting polymers: On the possibility of off-diagonal thermoelectricity

    Energy Technology Data Exchange (ETDEWEB)

    Mateeva, N; Niculescu, H; Schlenoff, J; Testardi, L

    1997-07-01

    Non-cubic materials, when structurally aligned, possess sufficient anisotropy to exhibit thermoelectric effects where the electrical and thermal currents are orthogonal (off-diagonal thermoelectricity). The authors discuss the benefits of this form of thermoelectricity for devices and describe a search for suitable properties in the air-stable conducting polymers polyaniline and polypyrrole. They find the simple and general correlation that the logarithm of the electrical conductivity scales linearly with the Seebeck coefficient on doping but with proportionality in excess of the conventional prediction for thermoelectricity. The correlation is unexpected in its universality and unfavorable for thermoelectric applications. A simple model suggests that mobile charges of both signs exist in these polymers, and this leads to reduced thermoelectric efficiency. They also briefly discuss non air-stable polyacetylene, where ambipolar transport does not appear to occur, and where properties seem more favorable for thermoelectricity.

  7. Enhancement of thermoelectric power factor of Sr2CoMoO6 double perovskite by annealing in reducing atmosphere

    Science.gov (United States)

    Tanwar, Khagesh; Saxena, Mandvi; Maiti, Tanmoy

    2017-10-01

    In general, n-type thermoelectric materials are rather difficult to design. This study particularly pivoted on designing potential environmentally benign oxides based n-type thermoelectric material. We synthesized Sr2CoMoO6 (SCMO) polycrystalline ceramics via the solid-state synthesis route. XRD, SEM, and thermoelectric measurements were carried out for phase constitution, microstructure analysis, and to determine its potential for thermoelectric applications. As-sintered SCMO sample showed an insulator like behavior till 640 °C after which it exhibited an n-type non-degenerate semiconductor behavior followed by a p-n type conduction switching. To stabilize a high temperature n-type behavior, annealing of SCMO in reducing atmosphere (H2) at 1000 °C was carried out. After annealing, the SCMO demonstrated an n-type semiconductor behavior throughout the temperature range of measurement. The electrical conductivity (σ) and the power factor (S2σ) were found to be increased manifold in the annealed SCMO double perovskite.

  8. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  9. INTENSIFICATION OF HEAT TRANSFER FROM THE IC CHIP TO THE HEAT SINK THROUGH THE USE OF NANOFILM THERMOELECTRIC HEAT PUMP

    Directory of Open Access Journals (Sweden)

    T. A. Ismailov

    2014-01-01

    Full Text Available The article considers the to enhance the efficiency the thermoelectric heat pump by making the branches of semiconductor p- and n-type as nanofilms and creating conditions for the emergence of additional thermoeffect between the hot and cold junctions of dissimilar metals that will create a more efficient heat pumps with small dimensions.

  10. A Flue Gas Tube for Thermoelectric Generator

    DEFF Research Database (Denmark)

    2013-01-01

    The invention relates to a flue gas tube (FGT) (1) for generation of thermoelectric power having thermoelectric elements (8) that are integrated in the tube. The FTG may be used in combined heat and power (CHP) system (13) to produce directly electricity from waste heat from, e.g. a biomass boiler...

  11. Test system for thermoelectric modules and materials

    Czech Academy of Sciences Publication Activity Database

    Hejtmánek, Jiří; Knížek, Karel; Švejda, V.; Horna, P.; Sikora, M.

    2014-01-01

    Roč. 43, č. 10 (2014), s. 3726-3732 ISSN 0361-5235 R&D Projects: GA ČR GA13-17538S Institutional support: RVO:68378271 Keywords : thermoelectric power module * automatic thermoelectric testing setup * heat flow measurement * power generation * heat recovery Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.798, year: 2014

  12. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  13. P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

    Science.gov (United States)

    le Febvrier, Arnaud; Van Nong, Ngo; Abadias, Gregory; Eklund, Per

    2018-05-01

    Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN1+δ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr0.96Al0.04N1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.

  14. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  15. Thermoelectric enhancement at low temperature in nonstoichiometric lead-telluride compounds

    International Nuclear Information System (INIS)

    Wang Heng; Li Jingfeng; Kita, Takuji

    2007-01-01

    Pb 1.17 Te thermoelectric polycrystalline materials were fabricated by mechanical alloying (MA) and spark plasma sintering (SPS). The property measurement and microstructural characterization showed that the present material has special features different from traditional Pb 1+x Te ingots with secondary Pb phase. An attractive enhancement of the thermoelectric figure of merit ZT = 0.64 was obtained at 450 K, with a low thermal conductivity of 1.11 W m -1 K -1 at this temperature. Transmission electron microscopy observation showed the existence of randomly dispersed nano features that are responsible for such enhancement, some of which are similar to the nanostructures reported in the AgPb m SbTe m+2 system. The origin of these regions is discussed and their influence on thermal conductivity is revealed. The results confirm the effectiveness of such a kind of nano feature in improving thermoelectric properties, especially in reducing thermal conductivity. They also indicate a new way of obtaining thermoelectric materials with such a kind of nano feature via MA and SPS

  16. Thermoelectric generators: A review of applications

    International Nuclear Information System (INIS)

    Champier, Daniel

    2017-01-01

    Highlights: • This paper reviews the state of the art of thermoelectric generators. • The latest thermoelectric modules are introduced. • Waste heat recovery in transport and industry with thermoelectric generators. • Domestic and industrial applications of thermoelectric generators. • Thermoelectric generators in space, micro-generation and solar conversion. - Abstract: In past centuries, men have mainly looked to increase their production of energy in order to develop their industry, means of transport and quality of life. Since the recent energy crisis, researchers and industrials have looked mainly to manage energy in a better way, especially by increasing energy system efficiency. This context explains the growing interest for thermoelectric generators. Today, thermoelectric generators allow lost thermal energy to be recovered, energy to be produced in extreme environments, electric power to be generated in remote areas and microsensors to be powered. Direct solar thermal energy can also be used to produce electricity. This review begins with the basic principles of thermoelectricity and a presentation of existing and future materials. Design and optimization of generators are addressed. Finally in this paper, we developed an exhaustive presentation of thermoelectric generation applications covering electricity generation in extreme environments, waste heat recovery in transport and industry, domestic production in developing and developed countries, micro-generation for sensors and microelectronics and solar thermoelectric generators. Many recent applications are presented, as well as the future applications which are currently being studied in research laboratories or in industry. The main purpose of this paper is to clearly demonstrate that, almost anywhere in industry or in domestic uses, it is worth checking whether a TEG can be added whenever heat is moving from a hot source to a cold source.

  17. Exploring SiSn as a performance enhancing semiconductor: A theoretical and experimental approach

    KAUST Repository

    Hussain, Aftab M.; Singh, Nirpendra; Fahad, Hossain M.; Rader, Kelly; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

    2014-01-01

    We present a novel semiconducting alloy, silicon-tin (SiSn), as channel material for complementary metal oxide semiconductor (CMOS) circuit applications. The material has been studied theoretically using first principles analysis as well

  18. Nanostructured Thermoelectric Oxides for Energy Harvesting Applications

    KAUST Repository

    Abutaha, Anas I.

    2015-11-24

    As the world strives to adapt to the increasing demand for electrical power, sustainable energy sources are attracting significant interest. Around 60% of energy utilized in the world is wasted as heat. Different industrial processes, home heating, and exhausts in cars, all generate a huge amount of unused waste heat. With such a huge potential, there is also significant interest in discovering inexpensive technologies for power generation from waste heat. As a result, thermoelectric materials have become important for many renewable energy research programs. While significant advancements have been done in improving the thermoelectric properties of the conventional heavy-element based materials (such as Bi2Te3 and PbTe), high-temperature applications of thermoelectrics are still limited to one materials system, namely SiGe, since the traditional thermoelectric materials degrade and oxidize at high temperature. Therefore, oxide thermoelectrics emerge as a promising class of materials since they can operate athigher temperatures and in harsher environments compared to non-oxide thermoelectrics. Furthermore, oxides are abundant and friendly to the environment. Among oxides, crystalline SrTiO3 and ZnO are promising thermoelectric materials. The main objective of this work is therefore to pursue focused investigations of SrTiO3 and ZnO thin films and superlattices grown by pulsed laser deposition (PLD), with the goal of optimizing their thermoelectric properties by following different strategies. First, the effect of laser fluence on the thermoelectric properties of La doped epitaxial SrTiO3 films is discussed. Films grown at higher laser fluences exhibit better thermoelectric performance. Second, the role of crystal orientation in determining the thermoelectric properties of epitaxial Al doped ZnO (AZO) films is explained. Vertically aligned (c-axis) AZO films have superior thermoelectric properties compared to other films with different crystal orientations. Third

  19. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  20. Electronic structure and high thermoelectric properties of a new material Ba{sub 3}Cu{sub 20}Te{sub 13}

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Gui, E-mail: kuiziyang@126.com [College of Physics and Electrical Engineering, Anyang Normal University, Anyang, Henan, 455000 (China); Wu, Jinghe [Department of Physics and Electronic Engineering, Henan Institute of Education, Zhengzhou, 450046 (China); Zhang, Jing; Ma, Dongwei [College of Physics and Electrical Engineering, Anyang Normal University, Anyang, Henan, 455000 (China)

    2016-09-05

    The electronic structure and high thermoelectric properties of Ba{sub 3}Cu{sub 20}Te{sub 13} are studied using first principles calculations and the semiclassical Boltzmann theory. The coexistence of ionic and covalent bonding in Ba{sub 3}Cu{sub 20}Te{sub 13} indicates that it is a Zintl phase compound. The calculated band structure shows that the compound is a semiconductor with an indirect band gap ∼0.45 eV, which is an appropriate band for the high thermoelectric performance. The transport calculations based on the electronic structure indicate that it exhibits relatively large Seebeck coefficients, high electrical conductivities, and high power factor. For Ba{sub 3}Cu{sub 20}Te{sub 13}, the n-type doping may achieve a higher thermoelectric performance than that of p-type doping. It is worth noting that the thermoelectric parameters of Ba{sub 3}Cu{sub 20}Te{sub 13} are comparable or larger than that of Ca{sub 5}Al{sub 2}Sb{sub 6}, a typical Zintl compound representative with high thermoelectric performance. - Highlights: • The electronic structure and thermoelectric(TE) properties are firstly studied. • The heavy and light bands near the Fermi level benefit TE properties. • The comparison indicates Ba{sub 3}Cu{sub 20}Te{sub 13} is a potential high TE material.

  1. High temperature thermoelectric energy conversion

    International Nuclear Information System (INIS)

    Wood, C.

    1986-01-01

    Considerable advances were made in the late '50's and early early '60's in the theory and development of materials for high-temperature thermoelectric energy conversion. This early work culminated in a variety of materials, spanning a range of temperatures, with the product of the figure of merit, Z, and temperature, T, i.e., the dimensionless figure of merit, ZT, of the order of one. This experimental limitation appeared to be universal and led a number of investigators to explore the possibility that a ZT - also represents a theoretical limitation. It was found not to be so

  2. Investigation of electronic, magnetic and thermoelectric properties of Zr{sub 2}NiZ (Z = Al,Ga) ferromagnets

    Energy Technology Data Exchange (ETDEWEB)

    Yousuf, Saleem, E-mail: nengroosaleem17@gmail.com; Gupta, Dinesh C., E-mail: sosfizix@gmail.com

    2017-05-01

    Systematic investigation of impact of electronic structure and magnetism, on the thermoelectric properties of new Zr{sub 2}NiZ (Z = Al, Ga) Heusler alloys are determined using density functional theory calculations. Half-metallicity with ferromagnetic character is supported by their 100% spin polarizations at the Fermi level. Magnetic moment of ∼3 μ{sub B} is according to the Slater-Puling rule, enables their practical applications. Electron density plots are used to analyse the nature of bonding and chemical composition. Boltzmann's theory is conveniently employed to investigate the thermoelectric properties of these compounds. The analysis of the thermal transport properties specifies the Seebeck coefficient as 25.6 μV/K and 18.6 μV/K at room temperature for Zr{sub 2}NiAl and Zr{sub 2}NiGa, respectively. The half-metallic nature with efficient thermoelectric coefficients suggests the likelihood of these materials to have application in designing spintronic devices and imminent thermoelectric materials. - Highlights: • The compounds are half-metallic ferromagnets. • 100% spin-polarized compounds for spintronics. • Increasing Seebeck coefficient over a wide temperature range. • Zr{sub 2}NiAl is efficient thermoelectric material than Zr{sub 2}NiGa.

  3. A MODIFIED VAN DER PAUW SETUP FOR MEASURING THE RESISTIVITY AND THERMOPOWER OF THERMOELECTRIC MATERIALS OF VARYING THICKNESSES

    KAUST Repository

    HITCHCOCK, DALE

    2013-10-01

    In the investigation of thermoelectric (TE) materials as a practical, and efficient, means of power generation/ refrigeration nearly ninety percent of the possible high-efficient binary compounds have been evaluated. But only a few proved to be useful such as Bi2Te3 alloys, PbTe and SiGe to name the most important materials. Therefore, in order to expand the research of high-efficiency TE materials new compounds and methods of efficiency optimization must be explored. There currently exist a vast number of uninvestigated ternary and quaternary materials that could be potential high-efficiency thermoelectric materials. The device and methodology discussed herein deal with rapidly measuring both the electrical resistivity and the Seebeck coefficient of thermoelectric materials, at a set temperature of T ≈ 300 K. Using nontraditional resistivity measurements and rapid, room-temperature thermopower measurements, a reliable and time-efficient means of gauging the power factor (defined below) values of newly synthesized thermoelectric materials is achievable. Furthermore, the efficacy of the van der Pauw technique for measuring the resistivity of thermoelectric materials has been verified. © World Scientific Publishing Company.

  4. A MODIFIED VAN DER PAUW SETUP FOR MEASURING THE RESISTIVITY AND THERMOPOWER OF THERMOELECTRIC MATERIALS OF VARYING THICKNESSES

    KAUST Repository

    HITCHCOCK, DALE; WALDROP, SPENCER; WILLIAMS, JARED; TRITT, TERRY M.

    2013-01-01

    In the investigation of thermoelectric (TE) materials as a practical, and efficient, means of power generation/ refrigeration nearly ninety percent of the possible high-efficient binary compounds have been evaluated. But only a few proved to be useful such as Bi2Te3 alloys, PbTe and SiGe to name the most important materials. Therefore, in order to expand the research of high-efficiency TE materials new compounds and methods of efficiency optimization must be explored. There currently exist a vast number of uninvestigated ternary and quaternary materials that could be potential high-efficiency thermoelectric materials. The device and methodology discussed herein deal with rapidly measuring both the electrical resistivity and the Seebeck coefficient of thermoelectric materials, at a set temperature of T ≈ 300 K. Using nontraditional resistivity measurements and rapid, room-temperature thermopower measurements, a reliable and time-efficient means of gauging the power factor (defined below) values of newly synthesized thermoelectric materials is achievable. Furthermore, the efficacy of the van der Pauw technique for measuring the resistivity of thermoelectric materials has been verified. © World Scientific Publishing Company.

  5. The physics of semiconductors an introduction including nanophysics and applications

    CERN Document Server

    Grundmann, Marius

    2016-01-01

    The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better under...

  6. Thermoelectric Energy Conversion: Materials, Devices, and Systems

    International Nuclear Information System (INIS)

    Chen, Gang

    2015-01-01

    This paper will present a discussion of challenges, progresses, and opportunities in thermoelectric energy conversion technology. We will start with an introduction to thermoelectric technology, followed by discussing advances in thermoelectric materials, devices, and systems. Thermoelectric energy conversion exploits the Seebeck effect to convert thermal energy into electricity, or the Peltier effect for heat pumping applications. Thermoelectric devices are scalable, capable of generating power from nano Watts to mega Watts. One key issue is to improve materials thermoelectric figure- of-merit that is linearly proportional to the Seebeck coefficient, the square of the electrical conductivity, and inversely proportional to the thermal conductivity. Improving the figure-of-merit requires good understanding of electron and phonon transport as their properties are often contradictory in trends. Over the past decade, excellent progresses have been made in the understanding of electron and phonon transport in thermoelectric materials, and in improving existing and identify new materials, especially by exploring nanoscale size effects. Taking materials to real world applications, however, faces more challenges in terms of materials stability, device fabrication, thermal management and system design. Progresses and lessons learnt from our effort in fabricating thermoelectric devices will be discussed. We have demonstrated device thermal-to-electrical energy conversion efficiency ∼10% and solar-thermoelectric generator efficiency at 4.6% without optical concentration of sunlight (Figure 1) and ∼8-9% efficiency with optical concentration. Great opportunities exist in advancing materials as well as in using existing materials for energy efficiency improvements and renewable energy utilization, as well as mobile applications. (paper)

  7. General Approach for Composite Thermoelectric Systems with Thermal Coupling: The Case of a Dual Thermoelectric Cooler

    Directory of Open Access Journals (Sweden)

    Cuautli Yanehowi Flores-Niño

    2015-06-01

    Full Text Available In this work, we show a general approach for inhomogeneous composite thermoelectric systems, and as an illustrative case, we consider a dual thermoelectric cooler. This composite cooler consists of two thermoelectric modules (TEMs connected thermally in parallel and electrically in series. Each TEM has different thermoelectric (TE properties, namely thermal conductance, electrical resistance and the Seebeck coefficient. The system is coupled by thermal conductances to heat reservoirs. The proposed approach consists of derivation of the dimensionless thermoelectric properties for the whole system. Thus, we obtain an equivalent figure of merit whose impact and meaning is discussed. We make use of dimensionless equations to study the impact of the thermal conductance matching on the cooling capacity and the coefficient of the performance of the system. The equivalent thermoelectric properties derived with our formalism include the external conductances and all intrinsic thermoelectric properties of each component of the system. Our proposed approach permits us changing the thermoelectric parameters of the TEMs and the working conditions of the composite system. Furthermore, our analysis shows the effect of the number of thermocouples on the system. These considerations are very useful for the design of thermoelectric composite systems. We reproduce the qualitative behavior of a commercial composite TEM connected electrically in series.

  8. Thermoelectricity an introduction to the principles

    CERN Document Server

    MacDonald, D K C

    2006-01-01

    This introductory treatment provides an understanding of the fundamental concepts and principles involved in the study of thermoelectricity in solids and of conduction in general. Aimed at graduate-level students and those interested in basic theory, it will be especially valuable to experimental physicists working in fields connected with electron transport and to theoreticians seeking a survey of thermoelectricity and related questions.Chronicling the early history of thermoelectricity from its discovery to modern times, this text features a considerable amount of experimental data and discu

  9. Thermoelectric power and topological transitions in quasi-two-dimensional electronic systems

    International Nuclear Information System (INIS)

    Blanter, Ya.M.; Pantsulaya, A.V.; Varlamov, A.A.

    1991-05-01

    Electron-impurity relaxation time and the thermoelectric power (TEP) of quasi-two-dimensional electron gas are calculated. Two cases are discussed: the isotropic spectrum and the electronic topological transition (ETT) of the ''neck-breaking'' type. Methods of thermal diagramatic technique are used for the calculation. It is found that the TEP in the vicinity of the ETT greatly exceeds its background value. The results of experimental investigations of the TEP in the metal-oxide-semiconductor structures are compared with the predictions of the proposed theory. (author). 17 refs, 5 figs

  10. Electronic, optical, and thermoelectric properties of Fe2+xV1−xAl

    Directory of Open Access Journals (Sweden)

    D. P. Rai

    2017-04-01

    Full Text Available We report the electronic, optical, and thermoelectric properties of full-Heusler alloy Fe2VAl with Fe antisite doping (Fe2+xV1−xAl as obtained from the first-principles Tran-Blaha modified Becke-Johnson potential. The results are discussed in relation to the available experimental data and show good agreements for the band gap, magnetic moment, and optical spectra. Exploring our transport data for thermoelectric applicability suggest that Fe2+xV1−xAl is a good candidate with a high figure of merit (ZT 0.75(0.65 for x = 0.25(0.50 at room temperature.

  11. WSi2 in Si(1-x)Ge(x) Composites: Processing and Thermoelectric Properties

    Science.gov (United States)

    Mackey, Jonathan A.; Sehirlioglu, Alp; Dynys, Fred

    2015-01-01

    Traditional SiGe thermoelectrics have potential for enhanced figure of merit (ZT) via nano-structuring with a silicide phase, such as WSi2. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples were prepared using powder metallurgy techniques; including mechano-chemical alloying, via ball milling, and spark plasma sintering for densification. Processing, micro-structural development, and thermoelectric properties will be discussed. Additionally, couple and device level characterization will be introduced.

  12. Thermoelectric generator cooling system and method of control

    Science.gov (United States)

    Prior, Gregory P; Meisner, Gregory P; Glassford, Daniel B

    2012-10-16

    An apparatus is provided that includes a thermoelectric generator and an exhaust gas system operatively connected to the thermoelectric generator to heat a portion of the thermoelectric generator with exhaust gas flow through the thermoelectric generator. A coolant system is operatively connected to the thermoelectric generator to cool another portion of the thermoelectric generator with coolant flow through the thermoelectric generator. At least one valve is controllable to cause the coolant flow through the thermoelectric generator in a direction that opposes a direction of the exhaust gas flow under a first set of operating conditions and to cause the coolant flow through the thermoelectric generator in the direction of exhaust gas flow under a second set of operating conditions.

  13. Multifold Seebeck increase in RuO{sub 2} films by quantum-guided lanthanide dilute alloying

    Energy Technology Data Exchange (ETDEWEB)

    Music, Denis, E-mail: music@mch.rwth-aachen.de; Basse, Felix H.-U.; Schneider, Jochen M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Han, Liang; Borca-Tasciuc, Theo [Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th St., Troy, New York 12180 (United States); Devender [Materials Science and Engineering Department, Rensselaer Polytechnic Institute, 110 8th St., Troy, New York 12180 (United States); Gengler, Jamie J. [Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, Ohio 45433 (United States); Spectral Energies, LLC, Dayton, Ohio 45431 (United States); Voevodin, Andrey A. [Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, Ohio 45433 (United States); Ramanath, Ganpati [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Materials Science and Engineering Department, Rensselaer Polytechnic Institute, 110 8th St., Troy, New York 12180 (United States)

    2014-02-03

    Ab initio predictions indicating that alloying RuO{sub 2} with La, Eu, or Lu can increase the Seebeck coefficient α manifold due to quantum confinement effects are validated in sputter-deposited La-alloyed RuO{sub 2} films showing fourfold α increase. Combinatorial screening reveals that α enhancement correlates with La-induced lattice distortion, which also decreases the thermal conductivity twentyfold, conducive for high thermoelectric figures of merit. These insights should facilitate the rational design of high efficiency oxide-based thermoelectrics through quantum-guided alloying.

  14. Thermoelectric-figure-of-merit enhancement of silicon-germanium through nanocomposite concept

    Science.gov (United States)

    Wang, Dezhi

    SiGe alloy has been the thermoelectric material element of RTGs (Radioisotope thermoelectric power generators) for more than 20 years because of its good performance at high temperature. It also has a very high potential application in converting exhaust heat into useful electricity, which currently attracts a lot of research interest in the automotive industry where 40% of the energy was rejected as exhaust heat. However, its low conversion efficiency (8%) is a major concern although it is the best in practice. A new concept, namely Si-Ge nanocomposite, was proposed to enhance thermoelectric figure-of-merit. Fast heating pressure sintering was found to be an appropriate synthesizing method and a lab-made direct current-induced hot press system was established. It can reach l200°C within several minutes and many parameters can be controlled. The uniquely designed graphite die assembly can stand l60MPa pressure which is better than the best commercial products (127MPa). Numerous Si-Ge nanocomposite samples were pressed using our DC hot press. Fully dense n-type Si-Ge nanocomposite samples of nanoSi80nanoGe20P were finally obtained. The nanocomposite structure was characterized via XRD, SEM, EDS, and TEM. The proposed nanocomposite structure, dots in a matrix, was observed. Most importantly, the thermoelectric property measurements showed that the Si-Ge nanocomposite of n-type nanoSi80nanoGe20 possessed higher electrical conductivity but lower thermal conductivity, thus a higher ZT than that of n-type nanoSi80microGe20. This result proved that thermoelectric-figure-of-merit enhancement through the nanocomposite concept was the right direction.

  15. Magnetic susceptibility of semiconductor melts

    International Nuclear Information System (INIS)

    Kutvitskij, V.A.; Shurygin, P.M.

    1975-01-01

    The temperature dependences chi of various alloys confirm the existence of cluster formations in molten semiconductors, the stability of these formations in melts being considerably affected by the anion nature. The concentrational dependences of the magnetic susceptibility for all the investigated systems exhibit the diamagnetism maxima corresponding to the compound compositions. Heating the melt causes ''smearing'' the maxima, which is related with the cluster structure dissociation. The existence of the maxima concentrational dependence chi corresponding to BiTe and BiSe is found in the isotherms. The non-linear dependence of chi on the composition shows the absence of a single-valued relation between the phase diagram and the chi-diagram for melts

  16. Recent Progress on PEDOT-Based Thermoelectric Materials.

    Science.gov (United States)

    Wei, Qingshuo; Mukaida, Masakazu; Kirihara, Kazuhiro; Naitoh, Yasuhisa; Ishida, Takao

    2015-02-16

    The thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT)-based materials have attracted attention recently because of their remarkable electrical conductivity, power factor, and figure of merit. In this review, we summarize recent efforts toward improving the thermoelectric properties of PEDOT-based materials. We also discuss thermoelectric measurement techniques and several unsolved problems with the PEDOT system such as the effect of water absorption from the air and the anisotropic thermoelectric properties. In the last part, we describe our work on improving the power output of thermoelectric modules by using PEDOT, and we outline the potential applications of polymer thermoelectric generators.

  17. Review on Polymers for Thermoelectric Applications

    Directory of Open Access Journals (Sweden)

    Mario Culebras

    2014-09-01

    Full Text Available In this review, we report the state-of-the-art of polymers in thermoelectricity. Classically, a number of inorganic compounds have been considered as the best thermoelectric materials. Since the prediction of the improvement of the figure of merit by means of electronic confinement in 1993, it has been improved by a factor of 3–4. In the mean time, organic materials, in particular intrinsically conducting polymers, had been considered as competitors of classical thermoelectrics, since their figure of merit has been improved several orders of magnitude in the last few years. We review here the evolution of the figure of merit or the power factor during the last years, and the best candidates to compete with inorganic materials. We also outline the best polymers to substitute classical thermoelectric materials and the advantages they present in comparison with inorganic systems.

  18. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-01-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart

  19. Review on Polymers for Thermoelectric Applications.

    Science.gov (United States)

    Culebras, Mario; Gómez, Clara M; Cantarero, Andrés

    2014-09-18

    In this review, we report the state-of-the-art of polymers in thermoelectricity. Classically, a number of inorganic compounds have been considered as the best thermoelectric materials. Since the prediction of the improvement of the figure of merit by means of electronic confinement in 1993, it has been improved by a factor of 3-4. In the mean time, organic materials, in particular intrinsically conducting polymers, had been considered as competitors of classical thermoelectrics, since their figure of merit has been improved several orders of magnitude in the last few years. We review here the evolution of the figure of merit or the power factor during the last years, and the best candidates to compete with inorganic materials. We also outline the best polymers to substitute classical thermoelectric materials and the advantages they present in comparison with inorganic systems.

  20. Effective thermal conductivity in thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Baranowski, LL; Snyder, GJ; Toberer, ES

    2013-05-28

    Thermoelectric generators (TEGs) are solid state heat engines that generate electricity from a temperature gradient. Optimizing these devices for maximum power production can be difficult due to the many heat transport mechanisms occurring simultaneously within the TEG. In this paper, we develop a model for heat transport in thermoelectric materials in which an "effective thermal conductivity" (kappa(eff)) encompasses both the one dimensional steady-state Fourier conduction and the heat generation/consumption due to secondary thermoelectric effects. This model is especially powerful in that the value of kappa(eff) does not depend upon the operating conditions of the TEG but rather on the transport properties of the TE materials themselves. We analyze a variety of thermoelectric materials and generator designs using this concept and demonstrate that kappa(eff) predicts the heat fluxes within these devices to 5% of the exact value. (C) 2013 AIP Publishing LLC.

  1. PV-hybrid and thermoelectric collectors

    Energy Technology Data Exchange (ETDEWEB)

    Rockendorf, G.; Sillmann, R. [Institut fuer Solarenergieforschung GmbH, Emmerthal (Germany); Podlowski, L.; Litzenburger, B. [SolarWerk GmbH, Teltow (Germany)

    1999-07-01

    Two different principles of thermoelectric cogeneration solar collectors have been realized and investigated. Concerning the first principle, the thermoelectric collector (TEC) delivers electricity indirectly by first producing heat and subsequently generating electricity by means of a thermoelectric generator. Concerning the second principle, the photovoltaic-hybrid collector (PVHC) uses photovoltaic cells, which are cooled by a liquid heat-transfer medium. The characteristics of both collector types are described. Simulation modules have been developed and implemented in TRNSYS 14.1 (1994), in order to simulate their behaviour in typical domestic hot-water systems. The discussion of the results shows that the electric output of the PV-hybrid collector is significantly higher than that of the thermoelectric collector. (author)

  2. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  3. A thermoelectric cap for seafloor hydrothermal vents

    International Nuclear Information System (INIS)

    Xie, Yu; Wu, Shi-jun; Yang, Can-jun

    2016-01-01

    Highlights: • We developed a thermoelectric cap (TC) to harvest hydrothermal energy. • The TC was deployed at a hydrothermal vent site near Kueishantao islet, Taiwan. • The TC monitored the temperature of the hydrothermal fluids during the field test. • The TC could make the thermal energy of hydrothermal fluids a viable power source. - Abstract: Long-term in situ monitoring is crucial to seafloor scientific investigations. One of the challenges of operating sensors in seabed is the lifespan of the sensors. Such sensors are commonly powered by batteries when other alternatives, such as tidal or solar energy, are unavailable. However, the batteries have a limited lifespan and must be recharged or replaced periodically, which is costly and impractical. A thermoelectric cap, which harvests the thermal energy of hydrothermal fluids through a conduction pipe and converts the heat to electrical energy by using thermoelectric generators, was developed to avoid these inconveniences. The thermoelectric cap was combined with a power and temperature measurement system that enables the thermoelectric cap to power a light-emitting diode lamp, an electronic load (60 Ω), and 16 thermocouples continuously. The thermoelectric cap was field tested at a shallow hydrothermal vent site near Kueishantao islet, which is located offshore of northeastern Taiwan. By using the thermal gradient between hydrothermal fluids and seawater, the thermoelectric cap obtained a sustained power of 0.2–0.5 W during the field test. The thermoelectric cap successfully powered the 16 thermocouples and recorded the temperature of the hydrothermal fluids during the entire field test. Our results show that the thermal energy of hydrothermal fluids can be an alternative renewable power source for oceanographic research.

  4. Thermoelectric nanomaterials materials design and applications

    CERN Document Server

    Koumoto, Kunihito

    2014-01-01

    Presently, there is an intense race throughout the world to develop good enough thermoelectric materials which can be used in wide scale applications. This book focuses comprehensively on very recent up-to-date breakthroughs in thermoelectrics utilizing nanomaterials and methods based in nanoscience. Importantly, it provides the readers with methodology and concepts utilizing atomic scale and nanoscale materials design (such as superlattice structuring, atomic network structuring and properties control, electron correlation design, low dimensionality, nanostructuring, etc.). Furthermore, also

  5. Semiconductor-based, large-area, flexible, electronic devices on {110} oriented substrates

    Science.gov (United States)

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110} textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  6. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  7. {100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  8. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  9. Making the semiconductor-metal transition in a growth-dominant phase-change alloy InSb for double density blu-ray super-RENS-ROM disc

    Energy Technology Data Exchange (ETDEWEB)

    Hyot, Berangere [CEA, LETI, MINATEC, F- 38054 Grenoble (France)

    2012-10-15

    Phenomenologically, a semiconductor-metal transition is characterized by a sudden change in electrical properties but also in optical behaviours, as a consequence of a change in electron behaviour. The ability to induce a reversible semiconductor-metal transition in a material by varying conditions such as applied temperature or electrical field, results in attractive changes in properties that have fuelled the curiosity of scientists. In this paper, we discuss the interest of such materials exhibiting the reversible semiconductor-metal transition in the development of the next generation of optical Bly-ray discs (BD), the so-called super-resolution near field structure (super-RENS) discs and we show that InSb semiconductor material exhibits huge variations of its optical properties during the optically (thermally)-induced solid-to-liquid change corresponding to a semiconductor-metal transition. First success in the video playback on HDTV (High Definition TeleVision) display from 50 GB (BD capacity x 2) InSb-based super-RENS-ROM discs including a high definition video content with 1920 x 1080 pixels was realized in September 2009 by the super-RENS consortium joining three partners: AIST (National Institute of Advanced Industrial Science and Technology), Mitsubishi Electric Co. and LETI. Snapshot of high definition video content from InSb-based super-RENS-ROM disc corresponding to 50 GB per layer (BD capacity x 2) displayed on HDTV. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Changes in the thermoelectric response of vitreous carbon due to the irradiation by γ-rays

    Science.gov (United States)

    Culebras, M.; Madroñero, A.; Mota, C.; Gómez, C. M.; Amo, Jose M.; Cantarero, A.

    2014-07-01

    In order to study variations in the thermoelectric properties, some commercial glassy carbon samples were subjected to a sequence of steps consisting of a combination of irradiation with γ-rays produced by radioisotopes 60Co, and hydrogen adsorption when the samples were put in an over pressured atmosphere of this gas. With this procedure it was possible to observe that the irradiation decreases the electrical conductivity of glassy carbon samples and the hydrogenation changes the sign of Seebeck coefficient. The material initially is an n-type semiconductor, but with hydrogenation changes to p-type semiconductor. X-ray diffraction analysis showed that the hydrogenated vitreous carbon is more amorphous than the pristine material and the γ-rays irradiation produces changes in the crystallite size and shape.

  11. A review of thermoelectric cooling: Materials, modeling and applications

    International Nuclear Information System (INIS)

    Zhao, Dongliang; Tan, Gang

    2014-01-01

    This study reviews the recent advances of thermoelectric materials, modeling approaches, and applications. Thermoelectric cooling systems have advantages over conventional cooling devices, including compact in size, light in weight, high reliability, no mechanical moving parts, no working fluid, being powered by direct current, and easily switching between cooling and heating modes. In this study, historical development of thermoelectric cooling has been briefly introduced first. Next, the development of thermoelectric materials has been given and the achievements in past decade have been summarized. To improve thermoelectric cooling system's performance, the modeling techniques have been described for both the thermoelement modeling and thermoelectric cooler (TEC) modeling including standard simplified energy equilibrium model, one-dimensional and three-dimensional models, and numerical compact model. Finally, the thermoelectric cooling applications have been reviewed in aspects of domestic refrigeration, electronic cooling, scientific application, and automobile air conditioning and seat temperature control, with summaries for the commercially available thermoelectric modules and thermoelectric refrigerators. It is expected that this study will be beneficial to thermoelectric cooling system design, simulation, and analysis. - Highlights: •Thermoelectric cooling has great prospects with thermoelectric material's advances. •Modeling techniques for both thermoelement and TEC have been reviewed. •Principle thermoelectric cooling applications have been reviewed and summarized

  12. Indium antimonide nanowires arrays for promising thermoelectric converters

    Directory of Open Access Journals (Sweden)

    Gorokh G. G.

    2015-02-01

    Full Text Available The authors have theoretically substantiated the possibility to create promising thermoelectric converters based on quantum wires. The calculations have shown that the use of quantum wires with lateral dimensions smaller than quantum confinement values and high concentration and mobility of electrons, can lead to a substantial cooling of one of the contacts up to tens of degrees and to the heating of the other. The technological methods of manufacturing of indium antimonide nanowires arrays with high aspect ratio of the nanowire diameters to their length in the modified nanoporous anodic alumina matrixes were developed and tested. The microstructure and composition of the formed nanostructures were investigated. The electron microscopy allowed establishing that within each pore nanowires are formed with diameters of 35 nm and a length of 35 microns (equal to the matrix thickness. The electron probe x-ray microanalysis has shown that the atomic ratio of indium and antimony in the semiconductor nanostructures amounted to 38,26% and 61,74%, respectively. The current-voltage measurement between the upper and lower contacts of Cu/InSb/Cu structure (1 mm2 has shown that at 2.82 V negative voltage at the emitter contact, current density is 129,8 A/cм2, and the collector contact is heated up to 75 degrees during 150 sec. Thus, the experimental results confirmed the theoretical findings that the quantum wire systems can be used to create thermoelectric devices, which can be widely applied in electronics, in particular, for cooling integrated circuits (processors, thermal controlling of the electrical circuits by changing voltage value.

  13. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  14. Interfacial reactions in thermoelectric modules

    KAUST Repository

    Wu, Hsin-jay

    2018-02-21

    Engineering transport properties of thermoelectric (TE) materials leads to incessantly breakthroughs in the zT values. Nevertheless, modular design holds a key factor to advance the TE technology. Herein, we discuss the structures of TE module and illustrate the inter-diffusions across the interface of constituent layers. For Bi2Te3-based module, soldering is the primary bonding method, giving rise to the investigations on the selections of solder, diffusion barrier layer and electrode. For mid-temperature PbTe-based TE module, hot-pressing or spark plasma sintering are alternative bonding approaches; the inter-diffusions between the diffusion barrier layer, electrode and TE substrate are addressed as well.

  15. High Temperature Integrated Thermoelectric Ststem and Materials

    Energy Technology Data Exchange (ETDEWEB)

    Mike S. H. Chu

    2011-06-06

    The final goal of this project is to produce, by the end of Phase II, an all ceramic high temperature thermoelectric module. Such a module design integrates oxide ceramic n-type, oxide ceramic p-type materials as thermoelectric legs and oxide ceramic conductive material as metalizing connection between n-type and p-type legs. The benefits of this all ceramic module are that it can function at higher temperatures (> 700 C), it is mechanically and functionally more reliable and it can be scaled up to production at lower cost. With this all ceramic module, millions of dollars in savings or in new opportunities recovering waste heat from high temperature processes could be made available. A very attractive application will be to convert exhaust heat from a vehicle to reusable electric energy by a thermoelectric generator (TEG). Phase I activities were focused on evaluating potential n-type and p-type oxide compositions as the thermoelectric legs. More than 40 oxide ceramic powder compositions were made and studied in the laboratory. The compositions were divided into 6 groups representing different material systems. Basic ceramic properties and thermoelectric properties of discs sintered from these powders were measured. Powders with different particles sizes were made to evaluate the effects of particle size reduction on thermoelectric properties. Several powders were submitted to a leading thermoelectric company for complete thermoelectric evaluation. Initial evaluation showed that when samples were sintered by conventional method, they had reasonable values of Seebeck coefficient but very low values of electrical conductivity. Therefore, their power factors (PF) and figure of merits (ZT) were too low to be useful for high temperature thermoelectric applications. An unconventional sintering method, Spark Plasma Sintering (SPS) was determined to produce better thermoelectric properties. Particle size reduction of powders also was found to have some positive benefits

  16. Synthesis of bulk nanocrystalline Pb-Sn-Te alloy under high pressure

    International Nuclear Information System (INIS)

    Zhu, P W; Chen, L X; Jia, X; Ma, H A; Ren, G Z; Guo, W L; Liu, H J; Zou, G T

    2002-01-01

    Pb-Sn-Te bulk nanocrystalline (NC) materials are prepared successfully by quenching melts under high pressure. The mean particle size is about 100 nm and the crystal structure is NaCl type. The mechanism of formation of the bulk NC alloy is explained: there is an increasing of the nucleation rate and a decrease in the growth rate of nuclei with increase of pressure during the solidification processes. The thermoelectric properties of Pb-Sn-Te bulk NC alloy are enhanced. This method is promising for producing thermoelectric materials with improved high-energy conversion efficiency

  17. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  18. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  19. Calculation of Nonlinear Thermoelectric Coefficients of InAs1-xSbx Using Monte Carlo Method

    Energy Technology Data Exchange (ETDEWEB)

    Sadeghian, RB; Bahk, JH; Bian, ZX; Shakouri, A

    2011-12-28

    It was found that the nonlinear Peltier effect could take place and increase the cooling power density when a lightly doped thermoelectric material is under a large electrical field. This effect is due to the Seebeck coefficient enhancement from an electron distribution far from equilibrium. In the nonequilibrium transport regime, the solution of the Boltzmann transport equation in the relaxation-time approximation ceases to apply. The Monte Carlo method, on the other hand, proves to be a capable tool for simulation of semiconductor devices at small scales as well as thermoelectric effects with local nonequilibrium charge distribution. InAs1-xSb is a favorable thermoelectric material for nonlinear operation owing to its high mobility inherited from the binary compounds InSb and InAs. In this work we report simulation results on the nonlinear Peltier power of InAs1-xSb at low doping levels, at room temperature and at low temperatures. The thermoelectric power factor in nonlinear operation is compared with the maximum value that can be achieved with optimal doping in the linear transport regime.

  20. Model Thermoelectric Generator TEG Small Modular As Micro Electricity Plant At Indonesia Part 1 Design And Material

    Directory of Open Access Journals (Sweden)

    Kisman M. Mahmud

    2015-08-01

    Full Text Available Thermoelectrically Generator TEG can generate electricity from the temperature difference between hot and cold at the junction thermoelectric module with two different semiconductor materials there will be a flow of current through the junction so as to produce a voltage. This principle uses the Seebeck effect thermoelectric generator as a base. By using these principles this study was conducted to determine the potential of the electric energy of the two Peltier modules which would be an alternative source for micro electricity plant using heat from methylated. The focus of this research is to design a model TEG Thermoelectric Generator Small Modular to produce the kind of material that is optimum for a TEG on the simulation Computer Aided Design CAD with a variety of four different materials that Bi2Te3 Bismuth Telluride PbTe-BiTe CMO-32 -62S Cascade and CMO-32-62S Calcium Manganese Oxide to its cold side using the heat sink fan and simulating heat aluminum plate attached to the hot side of the TEG modules with heat source of methylated. Model simulation results on TEG Small Modular micro electrical plant material obtained CMO-32-62S Cascade thermal material that has a value greater than 3 other material.

  1. Structural and thermoelectric properties of zintl-phase CaLiPn (Pn=As, Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Chandran, Anoop K.; Gudelli, Vijay Kumar; Sreeparvathy, P.C.; Kanchana, V., E-mail: kanchana@iith.ac.in

    2016-11-15

    First-principles calculations were carried out to study the structural, mechanical, dynamical and transport properties of zintl phase materials CaLiPn (Pn=As, Sb and Bi). We have used two different approaches to solve the system based on density functional theory. The plane wave pseudopotential approach has been used to study the structural and dynamical properties whereas, full potential linear augment plane wave method is used to examine the electronic structure, mechanical and thermoelectric properties. The calculated ground-state properties agree quite well with experimental values. The computed electronic structure shows the investigated compounds to be direct band gap semiconductors. Further, we have calculated the thermoelectric properties of all the investigated compounds for both the carriers at various temperatures. We found a high thermopower for both the carriers, especially n-type doping to be more favourable, which enabled us to predict that CaLiPn might have promising applications as a good thermoelectric material. Further, the phonon dispersion curves of the investigated compounds showed flat phonon modes and we also find lower optical and acoustic modes to cut each other at the lower frequency range, which further indicate the investigated compounds to possess reasonably low thermal conductivity. We have also analysed the low value of the thermal conductivity through the empirical relations and discussions are presented here. - Highlights: • Electronic band structure and chemical bonding. • Single crystalline elastic constants and poly crystalline elastic moduli. • Thermoelectric properties of zintl phase. • Lattice dynamics and phonon density of states.

  2. Hierarchical thermoelectrics : Crystal grain boundaries as scalable phonon scatterers

    NARCIS (Netherlands)

    Selli, Daniele; Boulfelfel, Salah Eddine; Schapotschnikow, PZ; Donadio, Davide; Leoni, Stefano

    2016-01-01

    Thermoelectric materials are strategically valuable for sustainable development, as they allow for the generation of electrical energy from wasted heat. In recent years several strategies have demonstrated some efficiency in improving thermoelectric properties. Dopants affect carrier

  3. Nano-Micro Materials Enabled Thermoelectricity From Window Glasses

    KAUST Repository

    Inayat, Salman Bin

    2012-01-01

    of individual glass strips to form the thickness depth of the glass on subsequent curing of the strips, and c) embedding nano-manufactured thermoelectric pillars, have been implemented for innovative integration of thermoelectric materials into window glasses

  4. Disordered Zinc in Zn4Sb3 with Phonon-Glass and Electron-Crystal Thermoelectric Properties

    Science.gov (United States)

    Snyder, G. Jeffrey; Christensen, Mogens; Nishibori, Eiji; Caillat, Thierry; Brummerstedt Iversen, Bo

    2004-01-01

    By converting waste heat into electricity, thermoelectric generators could be an important part of the solution to today's energy challenges. The compound Zn4Sb3 is one of the most efficient thermoelectric materials known. Its high efficiency results from an extraordinarily low thermal conductivity in conjunction with the electronic structure of a heavily doped semiconductor. Previous structural studies have been unable to explain this unusual combination of properties. Here, we show through a comprehensive structural analysis using single-crystal X-ray and powder-synchrotron-radiation diffraction methods, that both the electronic and thermal properties of Zn4Sb3 can be understood in terms of unique structural features that have been previously overlooked. The identification of Sb3- ions and Sb-2(4-) dimers reveals that Zn4Sb3 is a valence semiconductor with the ideal stoichiometry Zn13Sb10. In addition, the structure contains significant disorder, with zinc atoms distributed over multiple positions. The discovery of glass-like interstitial sites uncovers a highly effective mechanism for reducing thermal conductivity. Thus Zn4Sb3 is in many ways an ideal 'phonon glass, electron crystal' thermoelectric material.

  5. Strategies for optimizing the thermoelectricity of PbTe alloys

    Science.gov (United States)

    Zhai, Jinze; Wang, Teng; Wang, Hongchao; Su, Wenbin; Wang, Xue; Chen, Tingting; Wang, Chunlei

    2018-04-01

    Not Available Project supported by the National Basic Research Program of China (Grant No. 2013CB632506), the National Natural Science Foundation of China (Grant Nos. 51501105, 51672159, and 51611540342), the Young Scholars Program of Shandong University (Grant No. 2015WLJH21), the China Postdoctoral Science Foundation (Grant Nos. 2015M580588 and 2016T90631), the Postdoctoral Innovation Foundation of Shandong Province, China (Grant No. 201603027), the Fundamental Research Funds of Shandong University (Grant No. 2015TB019), and the Foundation of the State Key Laboratory of Metastable Materials Science and Technology (Grant No. 201703).

  6. High thermoelectric power factor from multilayer solution-processed organic films

    Science.gov (United States)

    Zuo, Guangzheng; Andersson, Olof; Abdalla, Hassan; Kemerink, Martijn

    2018-02-01

    We investigate the suitability of the "sequential doping" method of organic semiconductors for thermoelectric applications. The method consists of depositing a dopant (F4TCNQ) containing solution on a previously cast semiconductor (P3HT) thin film to achieve high conductivity, while preserving the morphology. For very thin films (˜25 nm), we achieve a high power factor around 8 μW/mK-2 with a conductivity over 500 S/m. For the increasing film thickness, conductivity and power factor show a decreasing trend, which we attribute to the inability to dope the deeper parts of the film. Since thick films are required to extract significant power from thermoelectric generators, we developed a simple additive technique that allows the deposition of an arbitrary number of layers without significant loss in conductivity or power factor that, for 5 subsequent layers, remain at ˜300 S/m and ˜5 μW/mK-2, respectively, whereas the power output increases almost one order of magnitude as compared to a single layer. The efficient doping in multilayers is further confirmed by an increased intensity of (bi)polaronic features in the UV-Vis spectra.

  7. Parametric modeling of energy filtering by energy barriers in thermoelectric nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Zianni, Xanthippi, E-mail: xzianni@teiste.gr, E-mail: xzianni@gmail.com [Department of Aircraft Technology, Technological Educational Institution of Sterea Ellada, 34400 Psachna (Greece); Department of Microelectronics, INN, NCSR “Demokritos,” 15310 Athens (Greece); Narducci, Dario [Department of Materials Science, University of Milano Bicocca, 20125 Milano (Italy)

    2015-01-21

    We present a parametric modeling of the thermoelectric transport coefficients based on a model previously used to interpret experimental measurements on the conductivity, σ, and Seebeck coefficient, S, in highly Boron-doped polycrystalline Si, where a very significant thermoelectric power factor (TPF) enhancement was observed. We have derived analytical formalism for the transport coefficients in the presence of an energy barrier assuming thermionic emission over the barrier for (i) non-degenerate and (ii) degenerate one-band semiconductor. Simple generic parametric equations are found that are in agreement with the exact Boltzmann transport formalism in a wide range of parameters. Moreover, we explore the effect of energy barriers in 1-d composite semiconductors in the presence of two phases: (a) the bulk-like phase and (b) the barrier phase. It is pointed out that significant TPF enhancement can be achieved in the composite structure of two phases with different thermal conductivities. The TPF enhancement is estimated as a function of temperature, the Fermi energy position, the type of scattering, and the barrier height. The derived modeling provides guidance for experiments and device design.

  8. Morphology, thermoelectric properties and wet-chemical doping of laser-sintered germanium nanoparticles

    International Nuclear Information System (INIS)

    Stoib, Benedikt; Langmann, Tim; Matich, Sonja; Sachsenhauser, Matthias; Stutzmann, Martin; Brandt, Martin S.; Petermann, Nils; Wiggers, Hartmut

    2013-01-01

    Porous, highly doped semiconductors are potential candidates for thermoelectric energy conversion elements. We report on the fabrication of thin films of Ge via short-pulse laser-sintering of Ge nanoparticles (NPs) in vacuum and study the macroporous morphology of the samples by secondary electron microscopy (SEM) imaging. The temperature dependence of the electrical conductivity and the Seebeck coefficient of undoped Ge is discussed in conjunction with the formation of a defect band near the valence band. We further introduce a versatile method of doping the resulting films with a variety of common dopant elements in group-IV semiconductors by using a liquid containing the dopant atoms. This method is fully compatible with laser-direct writing and suited to fabricate small scale thermoelectric generators. The incorporation of the dopants is verified by X-ray photoelectron spectroscopy (XPS) and their electrical activation is studied by conductivity and thermopower measurements. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. High Thermoelectric Power Factor of High-Mobility 2D Electron Gas.

    Science.gov (United States)

    Ohta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu

    2018-01-01

    Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower ( S ), high electrical conductivity (σ), and low thermal conductivity (κ). State-of-the-art nanostructuring techniques that significantly reduce κ have realized high-performance thermoelectric materials with a figure of merit ( ZT = S 2 ∙σ∙ T ∙κ -1 ) between 1.5 and 2. Although the power factor (PF = S 2 ∙σ) must also be enhanced to further improve ZT , the maximum PF remains near 1.5-4 mW m -1 K -2 due to the well-known trade-off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and σ of the high-mobility electron gas from -490 µV K -1 and ≈10 -1 S cm -1 to -90 µV K -1 and ≈10 4 S cm -1 , while maintaining a high carrier mobility (≈1500 cm 2 V -1 s -1 ). The maximized PF of the high-mobility electron gas is ≈9 mW m -1 K -2 , which is a two- to sixfold increase compared to state-of-the-art practical thermoelectric materials.

  10. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  11. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  12. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  13. Transport and first-principles study of novel thermoelectric materials

    Science.gov (United States)

    Chi, Hang

    Thermoelectric materials can recover waste industrial heat and convert it to electricity as well as provide efficient local cooling of electronic devices. The efficiency of such environmentally responsible and exceptionally reliable solid state energy conversion is determined by the dimensionless figure-of-merit ZT = alpha2 sigmaT/kappa, where alpha is the Seebeck coefficient, sigma is the electrical conductivity, kappa is the thermal conductivity, and T is the absolute temperature. The goal of the thesis is to (i) illustrate the physics to achieve high ZT of advanced thermoelectric materials and (ii) explore fundamental structure and transport properties in novel condensed matter systems, via an approach combining comprehensive experimental techniques and state-of-the-art first-principles simulation methods. Thermo-galvanomagnetic transport coefficients are derived from Onsager's reciprocal relations and evaluated via solving Boltzmann transport equation using Fermi-Dirac statistics, under the relaxation time approximation. Such understanding provides insights on enhancing ZT through two physically intuitive and very effective routes: (i) improving power factor PF = alpha2sigma; and (ii) reducing thermal conductivity kappa, as demonstrated in the cases of Mg2Si1-xSnx solid solution and Ge/Te double substituted skutterudites CoSb3(1-x)Ge1.5x Te1.5x, respectively. Motivated by recent theoretical predictions of enhanced thermoelectric performance in highly mismatched alloys, ZnTe:N molecular beam epitaxy (MBE) films deposited on GaAs (100) substrates are carefully examined, which leads to a surprising discovery of significant phonon-drag thermopower (reaching 1-2 mV/K-1) at ~13 K. Further systematic study in Bi2Te3 MBE thin films grown on sapphire (0001) and/or BaF2 (111) substrates, reveal that the peak of phonon drag can be tuned by the choice of substrates with different Debye temperatures. Moreover, the detailed transport and structure studies of Bi2-xTl xTe3

  14. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  15. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  16. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  17. Thermoelectric transport through quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Merker, Lukas Heinrich

    2016-06-30

    In this thesis the thermoelectric properties (electrical conductance, Seebeck coefficient and thermal conductance)of quantum dots described by the Anderson impurity model have been investigated by using the numerical renormalization group (NRG) method. In order to make accurate calculations for thermoelectric properties of quantum impurity systems, a number of recent developments and refinements of the NRG have been implemented. These include the z-averaging and Campo discretization scheme, which enable the evaluation of physical quantities on an arbitrary temperature grid and at large discretization parameter Λ and the full density matrix (FDM) approach, which allows a more accurate calculation of spectral functions and transport coefficients. The implementation of the z-averaging and Campo discretization scheme has been tested within a new method for specific heats of quantum impurities. The accuracy of this new method was established by comparison with the numerical solution of the Bethe-ansatz equations for the Anderson model. The FDM approach was implemented and tested within a new approach to the calculation of impurity contributions to the uniform susceptibilities. Within this method a non-negligible contribution from the ''environmental'' degrees of freedom needs to be taken into account to recover the correct susceptibility, as shown by comparison with the Bethe-ansatz approach. An accurate method to calculate the conductance of a quantum dot is implemented, enabling the extraction of the Fermi liquid scaling coefficients c{sub T} and c{sub B} to high accuracy, being able to verify the results of the renormalized super perturbation theory approach (within its regime of validity). The method was generalized to higher order moments of the local level spectral function. This, as well as reduction of the SU(2) code to the U(1) symmetry, enabled the investigation of the effect of a magnetic field on the thermoelectric properties of quantum

  18. Thermoelectric potential in UO2 and (U,Pu)O2 and its influence on oxygen migration in presence of a temperature gradient

    International Nuclear Information System (INIS)

    D'Annucci, F.

    1979-09-01

    Measurement of the thermoelectric power have been carried out in sintered pellets of uranium-oxide and uranium-plutonium mixed oxides up to 1800 K. For the thermal treatment an inducting furnace is used. The temperatures and the thermoelectric potential are measured with two thermocouples wich are contained in two holes in the lower end of the pellet. During the experiments a temperature difference of 80 K is maintained between the two measuring points. The Seebeck coefficients are calculated from the EMF measurements as a function of temperature and of the O/M ratio. The results show that these oxides have the typical electric properties of a classic semiconductor. The conductivity is of p-type up to a defined temperature wich is a function of the stoichiometry. The Seebeck coefficients are characterized by a defined energy of activation wich is independent from the stochiometry in the regions of hypo- and hyperstochiometric oxides. The thermoelectric forces and the lattice forces drive ions along the temperature gradients. Both forces can be described by the heat of transport of oxygen ions wich contains a thermoelectric and a thermal part. The thermoelectric part of the heat of transport is calculated with the values of the Seebeck coefficients and the contribution to the total heat of transport is discussed. (orig.) [de

  19. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  20. Alloy materials

    Energy Technology Data Exchange (ETDEWEB)

    Hans Thieme, Cornelis Leo (Westborough, MA); Thompson, Elliott D. (Coventry, RI); Fritzemeier, Leslie G. (Acton, MA); Cameron, Robert D. (Franklin, MA); Siegal, Edward J. (Malden, MA)

    2002-01-01

    An alloy that contains at least two metals and can be used as a substrate for a superconductor is disclosed. The alloy can contain an oxide former. The alloy can have a biaxial or cube texture. The substrate can be used in a multilayer superconductor, which can further include one or more buffer layers disposed between the substrate and the superconductor material. The alloys can be made a by process that involves first rolling the alloy then annealing the alloy. A relatively large volume percentage of the alloy can be formed of grains having a biaxial or cube texture.

  1. Coupled Thermoelectric Devices: Theory and Experiment

    Directory of Open Access Journals (Sweden)

    Jaziel A. Rojas

    2016-07-01

    Full Text Available In this paper, we address theoretically and experimentally the optimization problem of the heat transfer occurring in two coupled thermoelectric devices. A simple experimental set up is used. The optimization parameters are the applied electric currents. When one thermoelectric is analysed, the temperature difference Δ T between the thermoelectric boundaries shows a parabolic profile with respect to the applied electric current. This behaviour agrees qualitatively with the corresponding experimental measurement. The global entropy generation shows a monotonous increase with the electric current. In the case of two coupled thermoelectric devices, elliptic isocontours for Δ T are obtained in applying an electric current through each of the thermoelectrics. The isocontours also fit well with measurements. Optimal figure of merit is found for a specific set of values of the applied electric currents. The entropy generation-thermal figure of merit relationship is studied. It is shown that, given a value of the thermal figure of merit, the device can be operated in a state of minimum entropy production.

  2. Study of aluminum content in a welding metal by thermoelectric measurements

    Science.gov (United States)

    Carreón, H.; Ramirez, S.; Coronado, C.; Salazar, M.

    2018-03-01

    This work investigates the effect caused by the aluminum content in a welding metal and its variation in mechanical properties through the use of a non-destructive thermoelectric technique. It is known that aluminum has positive effects as deoxidizer in low percentages and alloying element together with Niobium and Vanadium. Aluminum has a positive and negative effect, initially improves the mechanical properties of the metal, as it acts as a grain refiner, increasing the yield strength, but in larger quantities, important mechanical properties such as hardness and toughness are seriously affected. For this purpose, HSLA ASTM 572 Gr. 50 steel was used as the base metal, where the weld metal was deposited, after which the specimens were fabricated and the mechanical tests and non-destructive tests were carried out. The sensitivity of the thermoelectric potential technique to microstructural and chemical composition changes was confirmed. The evolution of absolute thermoelectric potential (TEP) values with respect to the percentage of aluminum added to the weld was observed, being also quite sensitive to defects such as micro-cracks.

  3. Defects and diffusion in semiconductors XIV

    CERN Document Server

    Fisher, David J

    2012-01-01

    This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and

  4. Photoconductivity response time in amorphous semiconductors

    Science.gov (United States)

    Adriaenssens, G. J.; Baranovskii, S. D.; Fuhs, W.; Jansen, J.; Öktü, Ö.

    1995-04-01

    The photoconductivity response time of amorphous semiconductors is examined theoretically on the basis of standard definitions for free- and trapped-carrier lifetimes, and experimentally for a series of a-Si1-xCx:H alloys with xgeneration rate and temperature. As no satisfactory agreement between models and experiments emerges, a simple theory is developed that can account for the experimental observations on the basis of the usual multiple-trappping ideas, provided a small probability of direct free-carrier recombination is included. The theory leads to a stretched-exponential photocurrent decay.

  5. A thermoelectric voltage effect in polyethylene oxide

    CERN Document Server

    Martin, B; Kliem, H

    2003-01-01

    The conductivity of polyethylene oxide (PEO) is described with a three-dimensional hopping model considering electrostatic interactions between the ions. Ions fluctuate over energy-barriers in a multi-well potential. To decide whether positive or negative charges are responsible for this conductivity, the thermoelectric voltage is measured. The samples are embedded between two aluminium-electrodes. The oxide on the interface between the electrodes and the PEO serves as a blocking layer. The temperature of each electrode is controlled by a Peltier element. A temperature step is applied to one electrode by changing the temperature of one of the Peltier elements. Due to this temperature gradient, the mobile charges fluctuate thermally activated from the warmer side to the colder side of the sample. The direction of the measured thermoelectric voltage indicates the type of mobile charges. It is found that positive charges are mobile. Further, it is shown that the absolute value of the thermoelectric voltage depen...

  6. Peridynamic Formulation for Coupled Thermoelectric Phenomena

    Directory of Open Access Journals (Sweden)

    Migbar Assefa

    2017-01-01

    Full Text Available Modeling of heat and electrical current flow simultaneously in thermoelectric convertor using classical theories do not consider the influence of defects in the material. This is because traditional methods are developed based on partial differential equations (PDEs and lead to infinite fluxes at the discontinuities. The usual way of solving such PDEs is by using numerical technique, like Finite Element Method (FEM. Although FEM is robust and versatile, it is not suitable to model evolving discontinuities. To avoid such shortcomings, we propose the concept of peridynamic theory to derive the balance of energy and charge equations in the coupled thermoelectric phenomena. Therefore, this paper presents the transport of heat and charge in thermoelectric material in the framework of peridynamic (PD theory. To illustrate the reliability of the PD formulation, numerical examples are presented and results are compared with those from literature, analytical solutions, or finite element solutions.

  7. Holistic quantum design of thermoelectric niobium oxynitride

    Science.gov (United States)

    Music, Denis; Bliem, Pascal; Hans, Marcus

    2015-06-01

    We have applied holistic quantum design to thermoelectric NbON (space group Pm-3m). Even though transport properties are central in designing efficient thermoelectrics, mechanical properties should also be considered to minimize their thermal fatigue during multiple heating/cooling cycles. Using density functional theory, elastic constants of NbON were predicted and validated by nanoindentation measurements on reactively sputtered thin films. Based on large bulk-to-shear modulus ratio and positive Cauchy pressure, ceramic NbON appears ductile. These unusual properties may be understood by analyzing the electronic structure. Nb-O bonding is of covalent-ionic nature with metallic contributions. Second neighbor O-N bonds exhibit covalent-ionic character. Upon shear loading, these O-N bonds break giving rise to easily shearable planes. Ductile NbON, together with large Seebeck coefficient and low thermal expansion, is promising for thermoelectric applications.

  8. Measurement and characterization techniques for thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Tritt, T M

    1997-07-01

    Characterization of thermoelectric materials can pose many problems. A temperature difference can be established across these materials as an electrical current is passed due to the Peltier effect. The thermopower of these materials is quite large and thus large thermal voltages can contribute to many of the measurements necessary to investigate these materials. This paper will discuss the chracterization techniques necessary to investigate these materials and provide an overview of some of the potential systematic errors which can arise. It will also discuss some of the corrections one needs to consider. This should provide an introduction to the characterization and measurement of thermoelectric materials and provide references for a more in depth discussion of the concepts. It should also serve as an indication of the care that must be taken while working with thermoelectric materials.

  9. Method of operating a thermoelectric generator

    Science.gov (United States)

    Reynolds, Michael G; Cowgill, Joshua D

    2013-11-05

    A method for operating a thermoelectric generator supplying a variable-load component includes commanding the variable-load component to operate at a first output and determining a first load current and a first load voltage to the variable-load component while operating at the commanded first output. The method also includes commanding the variable-load component to operate at a second output and determining a second load current and a second load voltage to the variable-load component while operating at the commanded second output. The method includes calculating a maximum power output of the thermoelectric generator from the determined first load current and voltage and the determined second load current and voltage, and commanding the variable-load component to operate at a third output. The commanded third output is configured to draw the calculated maximum power output from the thermoelectric generator.

  10. Graphite moderated reactor for thermoelectric generation

    International Nuclear Information System (INIS)

    Akazawa, Issei; Yamada, Akira; Mizogami, Yorikata

    1998-01-01

    Fuel rods filled with cladded fuel particles distributed and filled are buried each at a predetermined distance in graphite blocks situated in a reactor core. Perforation channels for helium gas as coolants are formed to the periphery thereof passing through vertically. An alkali metal thermoelectric power generation module is disposed to the upper lid of a reactor container while being supported by a securing receptacle. Helium gas in the coolant channels in the graphite blocks in the reactor core absorbs nuclear reaction heat, to be heated to a high temperature, rises upwardly by the reduction of the specific gravity, and then flows into an upper space above the laminated graphite block layer. Then the gas collides against a ceiling and turns, and flows down in a circular gap around the circumference of the alkali metal thermoelectric generation module. In this case, it transfers heat to the alkali metal thermoelectric generation module. (I.N.)

  11. Knudsen pump driven by a thermoelectric material

    International Nuclear Information System (INIS)

    Pharas, Kunal; McNamara, Shamus

    2010-01-01

    The first use of a thermoelectric material in the bidirectional operation of a gas pump using thermal transpiration has been demonstrated. The thermoelectric material maintains a higher temperature difference which favors thermal transpiration and thus increases the efficiency of gas pumping. Since the hot and cold sides of the thermoelectric material are reversible, the direction of the pump may be changed by reversing the electrical current direction. Two different pump designs are presented that illustrate some of the design tradeoffs. The pumps are characterized by measuring the pressure difference that may be generated and by measuring the flow rate in the forward and reverse directions. For a pump composed of a porous material with a pore size of 100 nm, a maximum flow rate of 0.74 cm 3 min −1 and a maximum pressure of 1.69 kPa are achieved

  12. Tuning the Transport Properties of Layered Materials for Thermoelectric Applications using First-Principles Calculations

    KAUST Repository

    Saeed, Yasir

    2014-05-11

    Thermoelectric materials can convert waste heat into electric power and thus provide a way to reduce the dependence on fossil fuels. Our aim is to model the underlying materials properties and, in particular, the transport as controlled by electrons and lattice vibrations. The goal is to develop an understanding of the thermoelectric properties of selected materials at a fundamental level. The structural, electronic, optical, and phononic properties are studied in order to tune the transport, focusing on KxRhO2, NaxRhO2, PtSb2 and Bi2Se3. The investigations are based on density functional theory as implemented in the all electron linearized augmented plane wave plus local orbitals WIEN2k and pseudo potential Quantum-ESPRESSO codes. The thermoelectric properties are derived from Boltzmann transport theory under the constant relaxation time approximation, using the BoltzTraP code. We will discuss first the changes in the electronic band structure under variation of the cation concentration in layered KxRhO2 in the 2H phase and NaxRhO2 in the 3R phase. We will also study the hydrated phase. The deformations of the RhO6 octahedra turn out to govern the thermoelectric properties, where the high Seebeck coefficient results from ”pudding mold" bands. We investigate the thermoelectric properties of electron and hole doped PtSb2, which is not a layered material but shares “pudding mold" bands. PtSb2 has a high Seebeck coefficient at room temperature, which increases significantly under As alloying by bandgap opening and reduction of the lattice thermal conductivity. Bi2Se3 (bulk and thin film) has a larger bandgap then the well-known thermoelectric material Bi2Te3, which is important at high temperature. The structural stability, electronic structure, and transport properties of one to six quintuple layers of Bi2Se3 will be discussed. We also address the effect of strain on a single quintuple layer by phonon band structures. We will analyze the electronic and transport

  13. Valence Band Structure of InAs1−xBix and InSb1−xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Science.gov (United States)

    Samajdar, D. P.; Dhar, S.

    2014-01-01

    The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1−xBix and InSb1−xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E − energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data. PMID:24592181

  14. Valence band structure of InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy semiconductors calculated using valence band anticrossing model.

    Science.gov (United States)

    Samajdar, D P; Dhar, S

    2014-01-01

    The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  15. Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Zhuang-hao [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Fan, Ping, E-mail: fanping308@126.com [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Luo, Jing-ting [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Cai, Xing-min; Liang, Guang-xing; Zhang, Dong-ping [College of Physics Science and Technology, Shenzhen University, 518060 (China); Ye, Fan [Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China)

    2014-07-01

    Bismuth antimony tellurium is one of the most important tellurium-based materials for high-efficient thermoelectric application. In this paper, ion beam sputtering was used to deposit Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films on borosilicate substrates at room-temperature. Then the bismuth antimony tellurium thin films were synthesized via post thermal treatment of the Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films. The effect of annealing temperature and compositions on the thermoelectric properties of the thin films was investigated. After the thin films were annealed from 150 °C to 350 °C for 1 h in the high vacuum condition, the Seebeck coefficient changed from a negative sign to a positive sign. The X-ray diffraction results showed that the synthesized tellurium-based thermoelectric thin film exhibited various alloys phases, which contributed different thermoelectricity conductivity to the synthesized thin film. The overall Seebeck coefficient of the synthesized thin film changed from negative sign to positive sign, which was due to the change of the primary phase of the tellurium-based materials at different annealing conditions. Similarly, the thermoelectric properties of the films were also associated with the grown phase. High-quality thin film with the Seebeck coefficient of 240 μV K{sup −1} and the power factor of 2.67 × 10{sup −3} Wm{sup −1} K{sup −2} showed a single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase when the Sb/Te thin film sputtering time was 40 min. - Highlights: • Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thermoelectric thin films synthesized via bilayer annealing • The film has single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase with best thermoelectric performance. • The film has high thermoelectric properties comparable with other best results.

  16. NANOSTRUCTURING AS A WAY FOR THERMOELECTRIC EFFICIENCY IMPROVEMENT

    Directory of Open Access Journals (Sweden)

    L. V. Bochkov

    2014-07-01

    Full Text Available The urgency of thermoelectric energy conversion is proved. Perspectives of nanostructures usage as thermoelectric materials are shown. The authors have systematized and generalized the methods and investigation results of bulk nanostructure thermoelectrics based on Bi-Sb-Te solid solutions. Ways of nanoparticles fabrication and their subsequent sintering into a bulk sample, results of structure study of the received materials are shown by methods of electronic microscopy and X-ray spectroscopy, results of mechanical properties investigation. Methods of manufacturing suggested with the authors’ participation and properties of thermoelectric nanocomposites, fabricated with addition of fullerene, thermally split graphite, graphene and molybdenum disulphide are discussed. Methods for prevention of recrystallization, measurement methods of thermoelectric properties of studied nanothermoelectrics are considered, including electric and thermal conductivities, thermoemf and the figure of merit. Factors that influence on thermoelectric figure of merit, including the tunneling of carriers through interfaces between nanograins, the additional phonon scattering on nanograin borders and the energy filtration of carriers through barriers have been theoretically investigated. Mechanisms and ways for improvement of the figure of merit are determined. Experimental confirmation for thermoelectric figure of merit increase is received. Physical mechanisms of thermoelectric figure of merit increase are shown by perceptivity of nanostructures utilization. The growth of thermoelectric figure of merit means an expansion of areas for rational application of thermoelectric energy generation and thermoelectric cooling.

  17. Spin thermoelectric effects in organic single-molecule devices

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H.L.; Wang, M.X.; Qian, C.; Hong, X.K.; Zhang, D.B.; Liu, Y.S.; Yang, X.F., E-mail: xfyang@cslg.edu.cn

    2017-05-25

    Highlights: • A stronger spin thermoelectric performance in a polyacetylene device is observed. • For the antiferromagnetic (AFM) ordering, a transport gap is opened. Thus the thermoelectric effects are largely enhanced. - Abstract: The spin thermoelectric performance of a polyacetylene chain bridging two zigzag graphene nanoribbons (ZGNRs) is investigated based on first principles method. Two different edge spin arrangements in ZGNRs are considered. For ferromagnetic (FM) ordering, transmission eigenstates with different spin indices distributed below and above Fermi level are observed, leading directly to a strong spin thermoelectric effect in a wide temperature range. With the edge spins arranged in the antiferromagnetic (AFM) ordering, an obvious transport gap appears in the system, which greatly enhances the thermoelectric effects. The presence of a small spin splitting also induces a spin thermoelectric effect greater than the charge thermoelectric effect in certain temperature range. In general, the single-molecule junction exhibits the potential to be used for the design of perfect thermospin devices.

  18. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  19. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  20. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  1. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  2. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  3. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  4. Thermoelectric Control Of Temperatures Of Pressure Sensors

    Science.gov (United States)

    Burkett, Cecil G., Jr.; West, James W.; Hutchinson, Mark A.; Lawrence, Robert M.; Crum, James R.

    1995-01-01

    Prototype controlled-temperature enclosure containing thermoelectric devices developed to house electronically scanned array of pressure sensors. Enclosure needed because (1) temperatures of transducers in sensors must be maintained at specified set point to ensure proper operation and calibration and (2) sensors sometimes used to measure pressure in hostile environments (wind tunnels in original application) that are hotter or colder than set point. Thus, depending on temperature of pressure-measurement environment, thermoelectric devices in enclosure used to heat or cool transducers to keep them at set point.

  5. Compatibility of Segments of Thermoelectric Generators

    Science.gov (United States)

    Snyder, G. Jeffrey; Ursell, Tristan

    2009-01-01

    A method of calculating (usually for the purpose of maximizing) the power-conversion efficiency of a segmented thermoelectric generator is based on equations derived from the fundamental equations of thermoelectricity. Because it is directly traceable to first principles, the method provides physical explanations in addition to predictions of phenomena involved in segmentation. In comparison with the finite-element method used heretofore to predict (without being able to explain) the behavior of a segmented thermoelectric generator, this method is much simpler to implement in practice: in particular, the efficiency of a segmented thermoelectric generator can be estimated by evaluating equations using only hand-held calculator with this method. In addition, the method provides for determination of cascading ratios. The concept of cascading is illustrated in the figure and the definition of the cascading ratio is defined in the figure caption. An important aspect of the method is its approach to the issue of compatibility among segments, in combination with introduction of the concept of compatibility within a segment. Prior approaches involved the use of only averaged material properties. Two materials in direct contact could be examined for compatibility with each other, but there was no general framework for analysis of compatibility. The present method establishes such a framework. The mathematical derivation of the method begins with the definition of reduced efficiency of a thermoelectric generator as the ratio between (1) its thermal-to-electric power-conversion efficiency and (2) its Carnot efficiency (the maximum efficiency theoretically attainable, given its hot- and cold-side temperatures). The derivation involves calculation of the reduced efficiency of a model thermoelectric generator for which the hot-side temperature is only infinitesimally greater than the cold-side temperature. The derivation includes consideration of the ratio (u) between the

  6. Thermoelectric power generator with intermediate loop

    Science.gov (United States)

    Bell, Lon E; Crane, Douglas Todd

    2013-05-21

    A thermoelectric power generator is disclosed for use to generate electrical power from heat, typically waste heat. An intermediate heat transfer loop forms a part of the system to permit added control and adjustability in the system. This allows the thermoelectric power generator to more effectively and efficiently generate power in the face of dynamically varying temperatures and heat flux conditions, such as where the heat source is the exhaust of an automobile, or any other heat source with dynamic temperature and heat flux conditions.

  7. Peltier coefficient measurement in a thermoelectric module

    International Nuclear Information System (INIS)

    Garrido, Javier; Casanovas, Alejandro; Chimeno, José María

    2013-01-01

    A new method for measuring the Peltier coefficient in a thermocouple X/Y based on the energy balance at the junction has been proposed recently. This technique needs only the hot and cold temperatures of a thermoelectric module when an electric current flows through it as the operational variables. The temperature evolutions of the two module sides provide an evident and accurate idea of the Peltier effect. From these temperatures, the heat transfer between the module and the ambient is also evaluated. The thermoelectric phenomena are described in the framework of an observable theory. Based on this procedure, an experiment is presented for a university teaching laboratory at the undergraduate level. (paper)

  8. Alkaline earth filled nickel skutterudite antimonide thermoelectrics

    Science.gov (United States)

    Singh, David Joseph

    2013-07-16

    A thermoelectric material including a body centered cubic filled skutterudite having the formula A.sub.xFe.sub.yNi.sub.zSb.sub.12, where A is an alkaline earth element, x is no more than approximately 1.0, and the sum of y and z is approximately equal to 4.0. The alkaline earth element includes guest atoms selected from the group consisting of Be, Mb, Ca, Sr, Ba, Ra and combinations thereof. The filled skutterudite is shown to have properties suitable for a wide variety of thermoelectric applications.

  9. Temperature and Voltage Offsets in High-ZT Thermoelectrics

    Science.gov (United States)

    Levy, George S.

    2017-10-01

    Thermodynamic temperature can take on different meanings. Kinetic temperature is an expectation value and a function of the kinetic energy distribution. Statistical temperature is a parameter of the distribution. Kinetic temperature and statistical temperature, identical in Maxwell-Boltzmann statistics, can differ in other statistics such as those of Fermi-Dirac or Bose-Einstein when a field is present. Thermal equilibrium corresponds to zero statistical temperature gradient, not zero kinetic temperature gradient. Since heat carriers in thermoelectrics are fermions, the difference between these two temperatures may explain voltage and temperature offsets observed during meticulous Seebeck measurements in which the temperature-voltage curve does not go through the origin. In conventional semiconductors, temperature offsets produced by fermionic electrical carriers are not observable because they are shorted by heat phonons in the lattice. In high-ZT materials, however, these offsets have been detected but attributed to faulty laboratory procedures. Additional supporting evidence for spontaneous voltages and temperature gradients includes data collected in epistatic experiments and in the plasma Q-machine. Device fabrication guidelines for testing the hypothesis are suggested including using unipolar junctions stacked in a superlattice, alternating n/n + and p/p + junctions, selecting appropriate dimensions, doping, and loading.

  10. Temperature and Voltage Offsets in High- ZT Thermoelectrics

    Science.gov (United States)

    Levy, George S.

    2018-06-01

    Thermodynamic temperature can take on different meanings. Kinetic temperature is an expectation value and a function of the kinetic energy distribution. Statistical temperature is a parameter of the distribution. Kinetic temperature and statistical temperature, identical in Maxwell-Boltzmann statistics, can differ in other statistics such as those of Fermi-Dirac or Bose-Einstein when a field is present. Thermal equilibrium corresponds to zero statistical temperature gradient, not zero kinetic temperature gradient. Since heat carriers in thermoelectrics are fermions, the difference between these two temperatures may explain voltage and temperature offsets observed during meticulous Seebeck measurements in which the temperature-voltage curve does not go through the origin. In conventional semiconductors, temperature offsets produced by fermionic electrical carriers are not observable because they are shorted by heat phonons in the lattice. In high- ZT materials, however, these offsets have been detected but attributed to faulty laboratory procedures. Additional supporting evidence for spontaneous voltages and temperature gradients includes data collected in epistatic experiments and in the plasma Q-machine. Device fabrication guidelines for testing the hypothesis are suggested including using unipolar junctions stacked in a superlattice, alternating n/ n + and p/ p + junctions, selecting appropriate dimensions, doping, and loading.

  11. Correlating thermoelectric properties with microstructure in Bi0.8Sb0.2 thin films

    Science.gov (United States)

    Siegal, M. P.; Lima-Sharma, A. L.; Sharma, P. A.; Rochford, C.

    2017-04-01

    The room temperature electronic transport properties of 100 nm-thick thermoelectric Bi0.8Sb0.2 films, sputter-deposited onto quartz substrates and post-annealed in an ex-situ furnace, systematically correlate with the overall microstructural quality, improving with increasing annealing temperature until close to the melting point for the alloy composition. The optimized films have high crystalline quality with ˜99% of the grains oriented with the trigonal axis perpendicular to the substrate surface. Film resistivities and Seebeck coefficients are accurately measured by preventing deleterious surface oxide formation via a SiN capping layer and using Nd-doped Al for contacts. The resulting values are similar to single crystals and significantly better than previous reports from films and polycrystalline bulk alloys.

  12. Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2016-03-01

    Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

  13. THERMOELECTRIC PROPERTIES OF HOT-PRESSED p-TYPE Mg2Si0.3Sn0.7 SOLID SOLUTION

    Directory of Open Access Journals (Sweden)

    G. N. Isachenko

    2014-05-01

    Full Text Available It is shown that thermoelectric energy conversion which gives the possibility for utilizing a low potential heat is one of the ways for adoption of energy-saving technologies; and semiconductor materials with p-type and n-type conductivities having high thermoelectric figure of merit are necessary for operation of thermoelectric generators. The paper deals with possibility of usage of the p-Mg2Si0.3Sn0.7 solid solution (with a nanostructured modification as a couple for the well studied thermoelectric material based on n-Mg2Si-Mg2Sn. A technological scheme for fabrication of heavily doped Mg2Si0.3Sn0.7 solid solution of p-type by hot pressing from nanopowder is developed. The given technology has made it possible to reduce duration of a homogeneous material fabrication and has improved its physical and chemical properties. The samples were made by three ways: direct fusion for polycrystals fabrication; hot pressing from microparticles; nanostructuring, i.e. hot pressing from nanoparticles. By X-ray diffraction it is shown that sizes of structural elements in the fabricated samples are about 40 nm. The probe technique is used for measurement of electric conductivity and Seebeck coefficient. The stationary absolute method is used for measurement of thermal conductivity. Thermoelectric figure of merit is defined by measured values of kinetic coefficients in the temperatures range of 77 – 800 K. It was demonstrated, that electric conductivity, Seebeck coefficient and the power factor do not depend practically on a way of solid solution preparation. Thermal conductivity of samples pressed from nanoparticles has appeared to be higher, than of samples, obtained by direct fusion; i.e. in this case nanostructuring has not led to increase of thermoelectric figure of merit. The conclusion is drawn, that polycrystalline semiconductor Mg2Si0.3Sn0.7 can be used as a p-branch for a thermoelectric generator though nanostructuring has not led to the figure of

  14. An oxide-based thermoelectric generator: Transversal thermoelectric strip-device

    Science.gov (United States)

    Teichert, S.; Bochmann, A.; Reimann, T.; Schulz, T.; Dreßler, C.; Töpfer, J.

    2015-07-01

    A special design of an oxide-based transversal thermoelectric device utilizing thermoelectric oxides in combination with a ceramic multilayer technology is proposed. Metal strips within the ceramic matrix replace the tilted stack of alternating layers used in artificial anisotropic transversal thermoelectric devices. Numerical three-dimensional simulations of both device types reveal better thermoelectric performance data for the device with metal stripes. A monolithic transversal strip-device based on the material combination La1.97Sr0.03CuO4/Ag6Pd1 was prepared and electrically characterized. A maximum power output of 4.0 mW was determined at ΔT = 225 K for the monolithic device. The observed results are in remarkable agreement with three-dimensional numerical simulations utilizing the transport parameters of the two materials and the geometry data of the device.

  15. Electroforming of Bi(1-x)Sb(x) nanowires for high-efficiency micro-thermoelectric cooling devices on a chip.

    Energy Technology Data Exchange (ETDEWEB)

    Overmyer, Donald L.; Webb, Edmund Blackburn, III (,; ); Siegal, Michael P.; Yelton, William Graham

    2006-11-01

    Active cooling of electronic systems for space-based and terrestrial National Security missions has demanded use of Stirling, reverse-Brayton, closed Joule-Thompson, pulse tube and more elaborate refrigeration cycles. Such cryocoolers are large systems that are expensive, demand large powers, often contain moving parts and are difficult to integrate with electronic systems. On-chip, solid-state, active cooling would greatly enhance the capabilities of future systems by reducing the size, cost and inefficiencies compared to existing solutions. We proposed to develop the technology for a thermoelectric cooler capable of reaching 77K by replacing bulk thermoelectric materials with arrays of Bi{sub 1-x}Sb{sub x} nanowires. Furthermore, the Sandia-developed technique we will use to produce the oriented nanowires occurs at room temperature and can be applied directly to a silicon substrate. Key obstacles include (1) optimizing the Bi{sub 1-x}Sb{sub x} alloy composition for thermoelectric properties; (2) increasing wire aspect ratios to 3000:1; and (3) increasing the array density to {ge} 10{sup 9} wires/cm{sup 2}. The primary objective of this LDRD was to fabricate and test the thermoelectric properties of arrays of Bi{sub 1-x}Sb{sub x} nanowires. With this proof-of-concept data under our belts we are positioned to engage National Security systems customers to invest in the integration of on-chip thermoelectric coolers for future missions.

  16. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  17. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  18. Thermoelectric Mixed Thick-/Thin Film Microgenerators Based on Constantan/Silver

    Directory of Open Access Journals (Sweden)

    Mirosław Gierczak

    2018-01-01

    Full Text Available This paper describes the design, manufacturing and characterization of newly developed mixed thick-/thin film thermoelectric microgenerators based on magnetron sputtered constantan (copper-nickel alloy and screen-printed silver layers. The thermoelectric microgenerator consists of sixteen thermocouples made on a 34.2 × 27.5 × 0.25 mm3 alumina substrate. One of thermocouple arms was made of magnetron-sputtered constantan (Cu-Ni alloy, the second was a Ag-based screen-printed film. The length of each thermocouple arm was equal to 27 mm, and their width 0.3 mm. The distance between the arms was equal to 0.3 mm. In the first step, a pattern mask with thermocouples was designed and fabricated. Then, a constantan layer was magnetron sputtered over the whole substrate, and a photolithography process was used to prepare the first thermocouple arms. The second arms were screen-printed onto the substrate using a low-temperature silver paste (Heraeus C8829A or ElectroScience Laboratories ESL 599-E. To avoid oxidation of constantan, they were fired in a belt furnace in a nitrogen atmosphere at 550/450 °C peak firing temperature. Thermoelectric and electrical measurements were performed using the self-made measuring system. Two pyrometers included into the system were used for temperature measurement of hot and cold junctions. The estimated Seebeck coefficient, α was from the range 35 − 41 µV/K, whereas the total internal resistances R were between 250 and 3200 ohms, depending on magnetron sputtering time and kind of silver ink (the resistance of a single thermocouple was between 15.5 and 200 ohms.

  19. Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications

    Science.gov (United States)

    Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Goumri-Said, Souraya; Tahir, S. A.

    2018-05-01

    Germanium mono-chalcogenides have received considerable attention for being a promising replacement for the relatively toxic and expensive chalcogenides in renewable and sustainable energy applications. In this paper, we explore the potential of the recently discovered novel cubic structured (π-phase) GeS and GeSe for thermoelectric applications in the framework of density functional theory coupled with Boltzmann transport theory. To examine the modifications in their physical properties, the across composition alloying of π-GeS and π-GeSe (such as π-GeS1-xSex for x =0, 0.25, 0.50, 0.75, and 1) has been performed that has shown important effects on the electronic band structures and effective masses of charge carriers. An increase in Se composition in π-GeS1-xSex has induced a downward shift in their conduction bands, resulting in the narrowing of their energy band gaps. The thermoelectric coefficients of π-GeS1-xSex have been accordingly influenced by the evolution of the electronic band structures and effective masses of charge carriers. π-GeS1-xSex features sufficiently larger values of Seebeck coefficients, power factors and figures of merit (ZTs), which experience further improvement with an increase in temperature, revealing their potential for high-temperature applications. The calculated results show that ZT values equivalent to unity can be achieved for π-GeS1-xSex at appropriate n-type doping levels. Our calculations for the formation enthalpies indicate that a π-GeS1-xSex alloying system is energetically stable and could be synthesized experimentally. These intriguing characteristics make π-GeS1-xSex a promising candidate for futuristic thermoelectric applications in energy harvesting devices.

  20. Doping in controlling the type of conductivity in bulk and nanostructured thermoelectric materials

    International Nuclear Information System (INIS)

    Fuks, D.; Komisarchik, G.; Kaller, M.; Gelbstein, Y.

    2016-01-01

    Doping of materials for thermoelectric applications is widely used nowadays to control the type of conductivity. We report the results of ab-initio calculations aimed at developing the consistent scheme for determining the role of impurities that may change the type of conductivity in two attractive thermoelectric classes of materials. It is demonstrated that alloying of TiNiSn with Cu makes the material of n-type, and alloying with Fe leads to p-type conductivity. Similar calculations for PbTe with small amount of Na substituting for Pb leads to p-type conductivity, while Cl substituting for Te makes PbTe an n-type material. It is shown also that for nano-grained materials the n-type conductivity should be observed. The effect of impurities segregating to the grain boundaries in nano-structured PbTe is also discussed. - Highlights: • Bulk and nano-grained TE materials were analyzed by DFT. • The electronic effects on both PbTe and TiNiSn were demonstrated. • The role of impurities on the conductivity type was analyzed. • Interfacial states in nano-grained PbTe affect the conductivity type.

  1. The role of rare earths in narrow energy gap semiconductors

    International Nuclear Information System (INIS)

    Partin, D.L.; Heremans, J.; Morelli, D.T.; Thrush, C.M.

    1991-01-01

    Narrow energy band gap semiconductors are potentially useful for various devices, including infrared detectors and diode lasers. Rare earth elements have been introduced into lead chalcogenide semiconductors using the molecular beam epitaxy growth process. Europium and ytterbium increase the energy band gap, and nearly lattice-matched heterojunctions have been grown. In some cases, valence changes in the rare earth element cause doping of the alloy. In this paper some initial investigations of the addition of europium to indium antimonide are reported, including the variation of lattice parameter and optical transmission with composition and a negative magnetoresistance effect

  2. Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Krivoruchko, V.N.

    1996-01-01

    The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

  3. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  4. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  5. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  6. Printing and Folding: A Solution for High-Throughput Processing of Organic Thin-Film Thermoelectric Devices

    DEFF Research Database (Denmark)

    Mortazavinatanzi, Seyedmohammad; Rezaniakolaei, Alireza; Rosendahl, Lasse Aistrup

    2018-01-01

    implantable sensors. Introducing new semiconductor materials like organic thermoelectric materials and advancing manufacturing techniques are paving the way to overcome the barriers associated with the bulky and inflexible nature of the common TEGs and are making it possible to fabricate flexible...... and biocompatible modules. Yet, the lower efficiency of these materials in comparison with bulk-inorganic counterparts as well as applying them mostly in the form of thin layers on flexible substrates limits their applications. This research aims to improve the functionality of thin and flexible organic...

  7. Thermophysical properties of some liquid binary Mg-based alloys

    Directory of Open Access Journals (Sweden)

    Plevachuk Y.

    2017-01-01

    Full Text Available In this study, some structure-sensitive thermophysical properties, namely, electrical conductivity, thermal conductivity and thermoelectric power of liquid binary alloys Al33.3Mg66.7, Mg47.6Zn52.4 and Mg33.3Zn66.7 (all in wt.%, as the most promising cast alloys to fabricate components for cars, aircraft and other complex engineering products, were investigated. The electrical conductivity and thermoelectric power were measured in a wide temperature range by the four-point contact method. The thermal conductivity was measured by the steady-state concentric cylinder method. The obtained results are compared with literature experimental and calculated data.

  8. Thermoelectric transport in rare-earth compounds

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, Ulrike

    2007-07-01

    This work focuses on the thermoelectric transport in rare-earth compounds. The measurements of the thermal conductivity, thermopower, and Nernst coefficient are supplemented by investigations of other quantities as magnetic susceptibility and specific heat. Chapter 2 provides an introduction to the relevant physical concepts. Section 1 of that chapter summarizes the characteristic properties of rare-earth systems; section 2 gives an overview on thermoelectric transport processes in magnetic fields. The applied experimental techniques as well as the new experimental setup are described in detail in Chapter 3. The experimental results are presented in Chapter 4-6, of which each concentrates on a different subject. In Chapter 4, various Eu clathrates and the skutterudite-like Ce{sub 3}Rh{sub 4}Sn{sub 13} are presented, which have been investigated as potential thermoelectric materials for applications. Chapter 5 focusses on the study of the energy scales in the heavy-fermion series Lu{sub 1-x}Yb{sub x}Rh{sub 2}Si{sub 2} and Ce{sub x}La{sub 1-x}Ni{sub 2}Ge{sub 2} by means of thermopower investigations. Chapter 6 is dedicated to the thermoelectric transport properties of the correlated semimetal CeNiSn with special emphasis on the Nernst coefficient of this compound. (orig.)

  9. Thermoelectric Generator Emulator for MPPT Testing

    DEFF Research Database (Denmark)

    Man, Elena Anamaria; Sera, Dezso; Máthé, Lászlo

    2015-01-01

    This paper presents a novel approach to use a DC power supply as a thermoelectric generator (TEG) emulator to perform static and dynamic maximum power point tracking (MPPT). First, the electrical characterization of a calcium-manganese-oxide module is performed on a TEG test rig. Afterwards...

  10. Experimental Study of a Thermoelectric Generation System

    DEFF Research Database (Denmark)

    Zhu, Junpeng; Gao, Junling; Chen, Min

    2011-01-01

    . System-level simulation is carried out using a quasi-one-dimensional numerical model that enables direct comparison with experimental results. The results of both experiment and simulation will provide a foundation to improve and optimize complex thermoelectric generation systems....

  11. Potency of Thermoelectric Generator for Hybrid Vehicle

    Directory of Open Access Journals (Sweden)

    Nandy Putra

    2010-10-01

    Full Text Available Thermoelectric Generator (TEG has been known as electricity generation for many years. If the temperature difference occurred between two difference semi conductor materials, the current will flow in the material and produced difference voltage. This principle is known as Seebeck effect that is the opposite of Peltier effect Thermoelectric Cooling (TEC. This research was conducted to test the potential of electric source from twelve peltier modules. Then, these thermoelectric generators were applied in hybrid car by using waste heat from the combustion engine. The experiment has been conducted with variations of peltier module arrangements (series and parallels and heater as heat source for the thermoelectric generator, with variations of heater voltage input (110V and 220V applied. The experimental result showed that twelve of peltier modules arranged in series and heater voltage of 220V generated power output of 8.11 Watts with average temperature difference of 42.82°C. This result shows that TEG has a bright prospect as alternative electric source.

  12. Thermoelectric transport in rare-earth compounds

    International Nuclear Information System (INIS)

    Koehler, Ulrike

    2007-01-01

    This work focuses on the thermoelectric transport in rare-earth compounds. The measurements of the thermal conductivity, thermopower, and Nernst coefficient are supplemented by investigations of other quantities as magnetic susceptibility and specific heat. Chapter 2 provides an introduction to the relevant physical concepts. Section 1 of that chapter summarizes the characteristic properties of rare-earth systems; section 2 gives an overview on thermoelectric transport processes in magnetic fields. The applied experimental techniques as well as the new experimental setup are described in detail in Chapter 3. The experimental results are presented in Chapter 4-6, of which each concentrates on a different subject. In Chapter 4, various Eu clathrates and the skutterudite-like Ce 3 Rh 4 Sn 13 are presented, which have been investigated as potential thermoelectric materials for applications. Chapter 5 focusses on the study of the energy scales in the heavy-fermion series Lu 1-x Yb x Rh 2 Si 2 and Ce x La 1-x Ni 2 Ge 2 by means of thermopower investigations. Chapter 6 is dedicated to the thermoelectric transport properties of the correlated semimetal CeNiSn with special emphasis on the Nernst coefficient of this compound. (orig.)

  13. Thermoelectric devices and applications for the same

    Science.gov (United States)

    Olsen, Larry C.; DeSteese, John G.; Martin, Peter M.; Johnston, John W.; Peters, Timothy J.

    2016-03-08

    High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

  14. High thermoelectric performance of graphite nanofibers.

    Science.gov (United States)

    Tran, Van-Truong; Saint-Martin, Jérôme; Dollfus, Philippe; Volz, Sebastian

    2018-02-22

    Graphite nanofibers (GNFs) have been demonstrated to be a promising material for hydrogen storage and heat management in electronic devices. Here, by means of first-principles and transport simulations, we show that GNFs can also be an excellent material for thermoelectric applications thanks to the interlayer weak van der Waals interaction that induces low thermal conductance and a step-like shape in the electronic transmission with mini-gaps, which are necessary ingredients to achieve high thermoelectric performance. This study unveils that the platelet form of GNFs in which graphite layers are perpendicular to the fiber axis can exhibit outstanding thermoelectric properties with a figure of merit ZT reaching 3.55 in a 0.5 nm diameter fiber and 1.1 in a 1.1 nm diameter one. Interestingly, by introducing 14 C isotope doping, ZT can even be enhanced up to more than 5, and more than 8 if we include the effect of finite phonon mean free path, which demonstrates the amazing thermoelectric potential of GNFs.

  15. Thermoelectric cooling container for medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Aivazov, A A; Shtern, Y I; Budaguan, B G; Makhrachev, K B; Pastor, M

    1997-07-01

    In this work the thermoelectric cooling container for storing and transportation of the medicine, particularly for insulin, is discussed. In the working volume the temperature is supported on the level of +4 C. The container can work in two operating conditions: with the power supply and without the power supply. Two removable blocks are used for this purpose. One block (thermoelectric) is used for the work with the power supply and another (passive)-for the work without power supply. The thermoelectric block has a 12V power supply, which is used in the automobiles, yachts and other kinds of transport. The temperature in the working volume is supported by the use of the Peltier effect. An electronic device is used in this block and stabilizes temperature on the level of +4 C and indicates information about working conditions. The thermoelectric container has a power supply block for work at 220(110)V. The working temperature in the container can be maintained in the absence of the power supply. In this case the necessary temperature conditions are supported by melting of the crystallized salt. For this purpose the container has a hermetic volume containing this salt and contacting with the working volume.

  16. Design concepts for improved thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Slack, G A

    1997-07-01

    Some new guidelines are given that should be useful in the search for thermoelectric materials that are better than those currently available. In particular, clathrate and cryptoclathrate compounds with filler atoms in their cages offer the ability to substantially lower the lattice thermal conductivity.

  17. Interference enhanced thermoelectricity in quinoid type structures

    Energy Technology Data Exchange (ETDEWEB)

    Strange, M., E-mail: strange@chem.ku.dk; Solomon, G. C. [Nano-Science Center and Department of Chemistry, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen Ø (Denmark); Seldenthuis, J. S.; Verzijl, C. J. O.; Thijssen, J. M. [Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft (Netherlands)

    2015-02-28

    Quantum interference (QI) effects in molecular junctions may be used to obtain large thermoelectric responses. We study the electrical conductance G and the thermoelectric response of a series of molecules featuring a quinoid core using density functional theory, as well as a semi-empirical interacting model Hamiltonian describing the π-system of the molecule which we treat in the GW approximation. Molecules with a quinoid type structure are shown to have two distinct destructive QI features close to the frontier orbital energies. These manifest themselves as two dips in the transmission, that remain separated, even when either electron donating or withdrawing side groups are added. We find that the position of the dips in the transmission and the frontier molecular levels can be chemically controlled by varying the electron donating or withdrawing character of the side groups as well as the conjugation length inside the molecule. This feature results in a very high thermoelectric power factor S{sup 2}G and figure of merit ZT, where S is the Seebeck coefficient, making quinoid type molecules potential candidates for efficient thermoelectric devices.

  18. Test System for Thermoelectric Modules and Materials

    Science.gov (United States)

    Hejtmánek, J.; Knížek, K.; Švejda, V.; Horna, P.; Sikora, M.

    2014-10-01

    We present a design for a complex measuring device that enables its user to assess the parameters of power-generating thermoelectric modules (TEMs) (or bulk thermoelectric materials) under a wide range of temperatures ( T cold = 25°C to 90°C, T hot TEM, the actual heat flow through the module, and its mechanical load, which can be varied during the measurement. Key components of our testing setup are (i) a measuring chamber where the TEM/material is compressed between thermally shielded heating blocks equipped with a mechanical loading system and water-cooled copper-based cooler, (ii) an electrical load system, (iii) a type K thermocouple array connected to a data acquisition computer, and (iv) a thermostatic water-based cooling system with electronically controlled flow rate and temperature of cooling water. Our testing setup represents a useful tool able to assess, e.g., the thermoelectric parameters of newly developed TEMs and materials or to evaluate the thermoelectric parameters of commercially available modules and materials for comparison with values declared by the manufacturer.

  19. Shape Memory Alloys (Part II: Classification, Production and Application

    Directory of Open Access Journals (Sweden)

    I. Ivanic

    2014-09-01

    Full Text Available Shape memory alloys (SMAs have been extensively investigated because of their unique shape memory behaviour, i.e. their ability to recover their original shape they had before deformation. Shape memory effect is related to the thermoelastic martensitic transformation. Austenite to martensite phase transformation can be obtained by mechanical (loading and thermal methods (heating and cooling. Depending on thermomechanical conditions, SMAs demonstrate several thermomechanical phenomena, such as pseudoelasticity, superelasticity, shape memory effect (one-way and two-way and rubber-like behaviour. Numerous alloys show shape memory effect (NiTi-based alloys, Cu-based alloys, Fe-based alloys etc.. Nitinol (NiTi is the most popular and the most commonly used SMA due to its superior thermomechanical and thermoelectrical properties. NiTi alloys have greater shape memory strain and excellent corrosion resistance compared to Cu – based alloys. However, they are very costly. On the other hand, copper-based alloys (CuZn and CuAl based alloys are much less expensive, easier to manufacture and have a wider range of potential transformation temperatures. The characteristic transformation temperatures of martensitic transformation of CuAlNi alloys can lie between −200 and 200 °C, and these temperatures depend on Al and Ni content. Among the Cu – based SMAs, the most frequently applied are CuZnAl and CuAlNi alloys. Although CuZnAl alloys with better mechanical properties are the most popular among the Cu-based SMAs, they lack sufficient thermal stability, while CuAlNi shape memory alloys, in spite of their better thermal stability, have found only limited applications due to insufficient formability owing to the brittle γ2 precipitates. The most important disadvantage of polycrystalline CuAlNi alloys is a small reversible deformation (one-way shape memory effect: up to 4 %; two-way shape memory effect: only approximately 1.5 % due to intergranular

  20. Automotive Thermoelectric Waste Heat Recovery

    Science.gov (United States)

    Meisner, Gregory P.

    2015-03-01

    Considerable fuel energy, as much as 70%, is not converted to useful work by internal combustion engines but is instead rejected as waste heat, and more than half of the waste heat, nearly 40% of fuel energy, is contained in vehicle exhaust gas. This provides an opportunity to recover some of the wasted fuel energy and convert it from heat into useful work, subject to the laws of thermodynamics, and thereby improve vehicle energy efficiency. Thermoelectric (TE) materials have been extensively researched and TE devices are now being developed for operation at high temperatures corresponding to automotive exhaust gases for direct solid-state conversion of heat into electricity. This has stimulated substantial progress in the development of practical TE generator (TEG) systems for large-scale commercialization. A significant enabler of this progress has been the US Department of Energy's Vehicle Technologies Program through funding for low cost solutions for automotive TE waste heat recovery to improve fuel economy. Our current project at General Motors has culminated in the identification of the potential supply chain for all components and assembly of an automotive TEG. A significant focus has been to develop integrated and iterative modeling tools for a fully optimized TEG design that includes all components and subsystems (TE modules, heat exchangers, thermal interfaces, electrical interconnects, power conditioning, and vehicle integration for maximal use of TEG power). We have built and tested a new, low-cost Initial TEG prototype based on state-of-the-art production-scale skutterudite TE modules, novel heat exchanger designs, and practical solutions to the many technical challenges for optimum TEG performance. We will use the results for our Initial TEG prototype to refine our modeling and design tools for a Final automotive TEG system prototype. Our recent results will be presented. Thanks to: J.R. Salvador, E.R. Gundlach, D. Thompson, N.K. Bucknor, M

  1. Bond charges and electronic charge transfer in ternary semiconductors

    International Nuclear Information System (INIS)

    Pietsch, U.

    1986-01-01

    By means of a simple molecule-theoretic model of 'linear superposition of two-electron molecules' the bond charges between nearest neighbours and the effective charges of ions are calculated for ternary zinc-blende structure alloys as well as chalcopyrite semiconductors. Taking into account both, the charge transfer among the ions caused by the differences of electronegativities of atoms used and between the bonds created by the internal stress of the lattice a nearly unvaried averaged bond charge amount of the alloy is found, but rather dramatically changed local bond charge parameters in comparison with the respective values of binary compounds used. This fact should influence the noncentral force interaction in such semiconductors. (author)

  2. Critical review of thermoelectrics in modern power generation applications

    Directory of Open Access Journals (Sweden)

    Saqr Khalid M.

    2009-01-01

    Full Text Available The thermoelectric complementary effects have been discovered in the nineteenth century. However, their role in engineering applications has been very limited until the first half of the twentieth century, the beginning of space exploration era. Radioisotope thermoelectric generators have been the actual motive for the research community to develop efficient, reliable and advanced thermoelectrics. The efficiency of thermoelectric materials has been doubled several times during the past three decades. Nevertheless, there are numerous challenges to be resolved in order to develop thermoelectric systems for our modern applications. This paper discusses the recent advances in thermoelectric power systems and sheds the light on the main problematic concerns which confront contemporary research efforts in that field.

  3. The thermoelectric performance of bulk three-dimensional graphene

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Zhi, E-mail: yangzhi@tyut.edu.cn [Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education and Shanxi Province, Taiyuan University of Technology, Taiyuan 030024 (China); College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Lan, Guoqiang; Ouyang, Bin [Department of Mining and Materials Engineering, McGill University, Montreal H3A 0C5 (Canada); Xu, Li-Chun; Liu, Ruiping [College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Liu, Xuguang, E-mail: liuxuguang@tyut.edu.cn [Key Lab of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024 (China); College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Song, Jun [Department of Mining and Materials Engineering, McGill University, Montreal H3A 0C5 (Canada)

    2016-11-01

    The electronic and thermoelectric properties of a new carbon bulk material, three-dimensional (3D) graphene, are investigated in this study. Our results show that 3D graphene has unique electronic structure, i.e., near the Fermi level there exist Dirac cones. More importantly, the thermoelectric performance of 3D graphene is excellent, at room temperature the thermoelectric figure of merit (ZT) is 0.21, an order of magnitude higher than that of graphene. By introducing line defects, the ZT of 3D graphene could be enhanced to 1.52, indicating 3D graphene is a powerful candidate for constructing novel thermoelectric materials. - Highlights: • There exist Dirac cones in three-dimensional (3D) graphene. • The thermoelectric performance of 3D graphene is excellent. • The defective 3D graphene has better thermoelectric performance.

  4. Applications of thermoelectric modules on heat flow detection.

    Science.gov (United States)

    Leephakpreeda, Thananchai

    2012-03-01

    This paper presents quantitative analysis and practical scenarios of implementation of the thermoelectric module for heat flow detection. Mathematical models of the thermoelectric effects are derived to describe the heat flow from/to the detected media. It is observed that the amount of the heat flow through the thermoelectric module proportionally induces the conduction heat owing to the temperature difference between the hot side and the cold side of the thermoelectric module. In turn, the Seebeck effect takes place in the thermoelectric module where the temperature difference is converted to the electric voltage. Hence, the heat flow from/to the detected media can be observed from both the amount and the polarity of the voltage across the thermoelectric module. Two experiments are demonstrated for viability of the proposed technique by the measurements of the heat flux through the building wall and thermal radiation from the outdoor environment during daytime. Copyright © 2011 ISA. Published by Elsevier Ltd. All rights reserved.

  5. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  6. CCST [Center for Compound Semiconductor Technology] research briefs

    International Nuclear Information System (INIS)

    Zipperian, T.E.; Voelker, E.R.

    1989-12-01

    This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

  7. {\\rm{ZnO}}_{1-{{x}}}{\\rm{Te}}_{{{x}}} and {\\rm{ZnO}}_{1-{{x}}}\\rm{S}_{{{x}}} semiconductor alloys as competent materials for opto-electronic and solar cell applications: a comparative analysis

    Science.gov (United States)

    Das, Utsa; Pal, Partha P.

    2017-08-01

    ZnO1-x Te x ternary alloys have great potential to work as a photovoltaic (PV) absorber in solar cells. ZnO1-x S x is also a ZnO based alloy that have uses in solar cells. In this paper we report the comparative study of various parameters of ZnO1-x Te x and ZnO1-x S x for selecting it to be a competent material for solar cell applications. The parameters are mainly being calculated using the well-known VCA (virtual crystal approximation) and VBAC (Valence Band Anti-Crossing) model. It was certainly being analysed that the incorporation of Te atoms produces a high band gap lower than S atoms in the host ZnO material. The spin-orbit splitting energy value of ZnO1-x Te x was found to be higher than that of ZnO1-x S x . Beside this, the strain effects are also higher in ZnO1-x Te x than ZnO1-x S x . The remarkable notifying result which the paper is reporting is that at a higher percentage of Te atoms in ZnO1-x Te x , the spin-orbit splitting energy value rises above the band gap value, which signifies a very less internal carrier recombination that decreases the leakage current and increases the efficiency of the solar cell. Moreover, it also covers a wide wavelength range compared to ZnO1-x S x .

  8. ZnO1-xTex and ZnO1-xSx semiconductor alloys as competent materials for opto-electronic and solar cell applications: a comparative analysis

    Institute of Scientific and Technical Information of China (English)

    Utsa Das; Partha P.Pal

    2017-01-01

    ZnO1-xTex ternary alloys have great potential to work as a photovoltaic (PV) absorber in solar cells.ZnO1-xSx is also a ZnO based alloy that have uses in solar cells.In this paper we report the comparative study of various parameters of ZnO1-xTex and ZnO1-xSx for selecting it to be a competent material for solar cell applications.The parameters are mainly being calculated using the well-known VCA (virtual crystal approximation) and VBAC (Valence Band Anti-Crossing) model.It was certainly being analysed that the incorporation of Te atoms produces a high band gap lower than S atoms in the host ZnO material.The spin-orbit splitting energy value of ZnO1-xTex was found to be higher than that of ZnO1-xSx.Beside this,the strain effects are also higher in ZnO1-xTex than ZnO1-xSx.The remarkable notifying result which the paper is reporting is that at a higher percentage of Te atoms in ZnO1-xTex,the spin-orbit splitting energy value rises above the band gap value,which signifies a very less internal carrier recombination that decreases the leakage current and increases the efficiency of the solar ceil.Moreover,it also covers a wide wavelength range compared to ZnO1-xSx.

  9. Portable Thermoelectric Power Generator Coupled with Phase Change Material

    OpenAIRE

    Lim Chong C.; Al-Kayiem Hussain H.; Sing Chin Y.

    2014-01-01

    Solar is the intermittent source of renewable energy and all thermal solar systems having a setback on non-functioning during the night and cloudy environment. This paper presents alternative solution for power generation using thermoelectric which is the direct conversion of temperature gradient of hot side and cold side of thermoelectric material to electric voltage. Phase change material with latent heat effect would help to prolong the temperature gradient across thermoelectric material f...

  10. Enhanced thermoelectric power in ultrathin topological insulators with magnetic doping

    KAUST Repository

    Tahir, M.

    2014-09-07

    We derive analytical expressions for the magnetic moment and orbital magnetization as well as for the corresponding thermal conductivity and thermoelectric power of a topological insulator film. We demonstrate enhancement of the thermoelectric transport for decreasing film thickness and for application of an exchange field due to the tunable band gap. Combining hybridization and exchange field is particularly suitable for heat to electric energy conversion and thermoelectric cooling.

  11. Research for Actively Reducing Infrared Radiation by Thermoelectric Refrigerator

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hoon; Kim, Kyomin; Kim, Woochul [Yonsei Univ., Seoul (Korea, Republic of)

    2017-03-15

    We introduced a technology for reducing infrared radiation through the active cooling of hot surfaces by using a thermoelectric refrigerator. Certain surfaces were heated by aerodynamic heating, and the heat generation processes are proposed here. We calculated the temperatures and radiations from surfaces, while using thermoelectric refrigerators to cool the surfaces. The results showed that the contrast between the radiations of certain surfaces and the ambient environments can be removed using thermoelectric refrigerators.

  12. Enhanced thermoelectric power in ultrathin topological insulators with magnetic doping

    KAUST Repository

    Tahir, M.; Manchon, Aurelien; Schwingenschlö gl, Udo

    2014-01-01

    We derive analytical expressions for the magnetic moment and orbital magnetization as well as for the corresponding thermal conductivity and thermoelectric power of a topological insulator film. We demonstrate enhancement of the thermoelectric transport for decreasing film thickness and for application of an exchange field due to the tunable band gap. Combining hybridization and exchange field is particularly suitable for heat to electric energy conversion and thermoelectric cooling.

  13. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  14. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  15. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  16. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  17. High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

    Science.gov (United States)

    Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

    2015-06-01

    Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation high reproducibility. A silver-paste-based brazing technique was used to assemble the TE elements into modules. This assembly technique afforded low and repeatable electrical contact resistance (high temperatures (up to 600°C), and thirty 20 mm × 20 mm TE modules were produced and tested. The results revealed the performance was reproducible, with power output reaching 1.9 ± 0.2 W for a 370 degree temperature difference. When the temperature difference was increased to 500°C, electrical power output increased to >3.6 W. An air-water heat exchanger was developed and 30 TE modules were clamped and connected electrically

  18. Laser assisted hybrid additive manufacturing of thermoelectric modules

    Science.gov (United States)

    Zhang, Tao; Tewolde, Mahder; Longtin, Jon P.; Hwang, David J.

    2017-02-01

    Thermoelectric generators (TEGs) are an attractive means to produce electricity, particular from waste heat applications. However, TEGs are almost exclusively manufactured as flat, rigid modules of limited size and shape, and therefore an appropriate mounting for intimate contact of TEGs modules onto arbitrary surfaces represents a significant challenge. In this study, we introduce laser assisted additive manufacturing method to produce multi-layered thermoelectric generator device directly on flat and non-flat surfaces for waste heat recovery. The laser assisted processing spans from laser scribing of thermal sprayed thin films, curing of dispensed thermoelectric inks and selective laser sintering to functionalize thermoelectric materials.

  19. Semirelativity in semiconductors: a review.

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-20

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures [Formula: see text] are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band [Formula: see text] description for NGS. The maximum electron velocity in NGS is [Formula: see text], which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In [Formula: see text] alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength [Formula: see text] is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that [Formula: see text] is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing energy. This conclusion is confirmed experimentally for NGS. Electrons

  20. Semirelativity in semiconductors: a review

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-01

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures \\varepsilon ≤ft(\\mathbf{k}\\right) are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band \\mathbf{k}\\centerdot \\mathbf{p} description for NGS. The maximum electron velocity in NGS is u≃ 1× {{10}8}~\\text{cm}~{{\\text{s}}-1} , which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In \\text{H}{{\\text{g}}1-x}\\text{C}{{\\text{d}}x}\\text{Te} alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength {λz} is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that {λz} is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing

  1. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  2. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  3. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  4. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  5. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  6. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  7. Parameters of thermoelectric power and electronic structure of Yb-based compounds of YbM2X2(M=Fe,Co,Ni,Cu; X=Si,Ge) type

    International Nuclear Information System (INIS)

    Levin, E.M.; Kuzhel', B.S.

    1990-01-01

    Thermoelectric power of Yb-based intermetallic alloys YbM 2 Si 2 (M-Co,Ni,Cu) and YbM 2 Ge 2 (M=Fe,Co,Ni) have been investigated and found to have anomalous low-temperature peaks conditioned by intermediate Yb valency. Calculation of electronic structure parameters performed in frames of the localized Fermi-liquid model using experimental data on the thermoelectric power is in good agreement with results of YbCu 2 Si 2 band structure calculation based on the experimental value of the electronic heat capacity with regard for the (2J+1) - fold Yb 2+ degeneration

  8. Special quasirandom structures for binary/ternary group IV random alloys

    KAUST Repository

    Chroneos, Alexander I.; Jiang, Chao; Grimes, Robin W.; Schwingenschlö gl, Udo

    2010-01-01

    Simulation of defect interactions in binary/ternary group IV semiconductor alloys at the density functional theory level is difficult due to the random distribution of the constituent atoms. The special quasirandom structures approach is a

  9. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  10. Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications

    Directory of Open Access Journals (Sweden)

    Pantelija M. Nikolic

    2015-01-01

    Full Text Available PbTe single crystals doped with monovalent Au or Cu were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for all samples and plasma minima were registered. These experimental spectra were numerically analyzed and optical parameters were calculated. All the samples of PbTe doped with Au or Cu were of the “n” type. The properties of these compositions were analyzed and compared with PbTe containing other dopants. The samples of PbTe doped with only 3.3 at% Au were the best among the PbTe + Au samples having the lowest plasma frequency and the highest mobility of free carriers-electrons, while PbTe doped with Cu was the opposite. Samples with the lowest Cu concentration of 0.23 at% Cu had the best properties. Thermal diffusivity and electronic transport properties of the same PbTe doped samples were also investigated using a photoacoustic (PA method with the transmission detection configuration. The results obtained with the far infrared and photoacoustic characterization of PbTe doped samples were compared and discussed. Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material.

  11. Maximization of the Thermoelectric Cooling of a Graded Peltier Device by Analytical Heat-Equation Resolution

    Science.gov (United States)

    Thiébaut, E.; Goupil, C.; Pesty, F.; D'Angelo, Y.; Guegan, G.; Lecoeur, P.

    2017-12-01

    Increasing the maximum cooling effect of a Peltier cooler can be achieved through material and device design. The use of inhomogeneous, functionally graded materials may be adopted in order to increase maximum cooling without improvement of the Z T (figure of merit); however, these systems are usually based on the assumption that the local optimization of the Z T is the suitable criterion to increase thermoelectric performance. We solve the heat equation in a graded material and perform both analytical and numerical analysis of a graded Peltier cooler. We find a local criterion that we use to assess the possible improvement of graded materials for thermoelectric cooling. A fair improvement of the cooling effect (up to 36%) is predicted for semiconductor materials, and the best graded system for cooling is described. The influence of the equation of state of the electronic gas of the material is discussed, and the difference in term of entropy production between the graded and the classical system is also described.

  12. Efficiency Study of a Commercial Thermoelectric Power Generator (TEG) Under Thermal Cycling

    Science.gov (United States)

    Hatzikraniotis, E.; Zorbas, K. T.; Samaras, I.; Kyratsi, Th.; Paraskevopoulos, K. M.

    2010-09-01

    Thermoelectric generators (TEGs) make use of the Seebeck effect in semiconductors for the direct conversion of heat to electrical energy. The possible use of a device consisting of numerous TEG modules for waste heat recovery from an internal combustion (IC) engine could considerably help worldwide efforts towards energy saving. However, commercially available TEGs operate at temperatures much lower than the actual operating temperature range in the exhaust pipe of an automobile, which could cause structural failure of the thermoelectric elements. Furthermore, continuous thermal cycling could lead to reduced efficiency and lifetime of the TEG. In this work we investigate the long-term performance and stability of a commercially available TEG under temperature and power cycling. The module was subjected to sequential hot-side heating (at 200°C) and cooling for long times (3000 h) in order to measure changes in the TEG’s performance. A reduction in Seebeck coefficient and an increase in resistivity were observed. Alternating-current (AC) impedance measurements and scanning electron microscope (SEM) observations were performed on the module, and results are presented and discussed.

  13. High-temperature thermoelectric properties of La-doped BaSnO3 ceramics

    International Nuclear Information System (INIS)

    Yasukawa, Masahiro; Kono, Toshio; Ueda, Kazushige; Yanagi, Hiroshi; Hosono, Hideo

    2010-01-01

    To elucidate the thermoelectric properties at high temperatures, perovskite-type La-doped BaSnO 3 ceramics were fabricated by a polymerized complex (PC) method and subsequent spark plasma sintering (SPS) technique. Fine powders of Ba 1-x La x SnO 3 (x = 0.00-0.07) were prepared by the PC method using citrate complexes, and SPS treatment converted the powders into dense ceramics with relative densities of 93-97%. The La content dependence of the lattice parameter suggested that the solubility of La for Ba sites was approximately x = 0.03. The temperature dependence of the electrical conductivity σ and Seebeck coefficient S showed that each La-doped ceramic was an n-type degenerate semiconductor in the measured temperature range of 373-1073 K. The La content dependence of the S values indicated that the electron carrier concentration increased successively up to x = 0.03, which was the solubility limit of the La atoms. The thermoelectric power factors S 2 σ increased drastically with La doping, and reached a maximum for x = 0.01 with values of 0.8 x 10 -4 W m -1 K -2 at 373 K to 2.8 x 10 -4 W m -1 K -2 at 1073 K.

  14. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  15. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  16. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  17. Method for estimating the lattice thermal conductivity of metallic alloys

    International Nuclear Information System (INIS)

    Yarbrough, D.W.; Williams, R.K.

    1978-08-01

    A method is described for calculating the lattice thermal conductivity of alloys as a function of temperature and composition for temperatures above theta/sub D//2 using readily available information about the atomic species present in the alloy. The calculation takes into account phonon interactions with point defects, electrons and other phonons. Comparisons between experimental thermal conductivities (resistivities) and calculated values are discussed for binary alloys of semiconductors, alkali halides and metals. A discussion of the theoretical background is followed by sufficient numerical work to facilitate the calculation of lattice thermal conductivity of an alloy for which no conductivity data exist

  18. Effect of quantum confinement on thermoelectric properties of vanadium dioxide nanofilms

    Energy Technology Data Exchange (ETDEWEB)

    Khan, G.R.; Ahmad, Bilal [National Institute of Technology Srinagar, Nanotech Research Lab, Department of Physics, Kashmir (India)

    2017-12-15

    The quantum confinement effect on thermoelectric properties of pristine vanadium dioxide (VO{sub 2}) nanofilms across semiconductor to metal phase transition (SMT) has been demonstrated by studying VO{sub 2} nanofilms of 15 nm thickness in comparison to microfilms of 290 nm thickness synthesized via inorganic sol-gel method casted on glass substrates by spin coating technique. The ebbing of phase transition temperature in nanofilms across SMT was consistent with the results obtained from resistance-temperature hysteresis contour during SMT dynamics of the nanofilms. The temperature dependent Hall and Seebeck measurements revealed that electrons were the charge carriers in the nanofilms and that the value of charge carrier concentration increased as much as 4 orders of magnitude while going across SMT which stood responsible almost entirely for resistance variations. The decline in carrier mobility and escalation in Seebeck coefficient in the low temperature semiconducting region were splendidly witnessed across SMT. (orig.)

  19. Thermoelectric Transport by Surface States in Bi2Se3-Based Topological Insulator Thin Films

    International Nuclear Information System (INIS)

    Li Long-Long; Xu Wen

    2015-01-01

    We develop a tractable theoretical model to investigate the thermoelectric (TE) transport properties of surface states in topological insulator thin films (TITFs) of Bi 2 Se 3 at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi 2 Se 3 -based TITFs as high-performance TE materials and devices. (paper)

  20. Thermal effect of a thermoelectric generator on parallel microchannel heat sink

    DEFF Research Database (Denmark)

    Kolaei, Alireza Rezania; Rosendahl, Lasse

    2012-01-01

    Thermoelectric generators (TEG) convert heat energy to electrical power by means of semiconductor charge carriers serving as working fluid. In this work, a TEG is applied to a parallel microchannel heat sink. The effect of the inlet plenum arrangement on the laminar flow distribution...... in the channels is considered at a wide range of the pressure drop along the heat sink. The particular focus of this study is geometrical effect of the TEG on the heat transfer characteristics in the micro-heat sink. The hydraulic diameter of the microchannels is 270 μm, and three heat fluxes are applied...... on the hot surface of the TEG. By considering the maximum temperature limitation for Bi_2 Te_3 material and using the microchannel heat sink for cooling down the TEG system, an optimum pumping power is achieved. The results are in a good agreement with the previous experimental and theoretical studies....

  1. Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning

    Science.gov (United States)

    Lee, Ji Eun; Cho, Sang-Hum; Oh, Min-Wook; Ryu, Byungi; Joo, Sung-Jae; Kim, Bong-Seo; Min, Bok-Ki; Lee, Hee-Woong; Park, Su-Dong

    2014-07-01

    The Bi-doped Mg2Si powder was fabricated with solid state reaction method and consolidated with hot pressing method and then its thermoelectric properties were investigated. The n-type transport properties were measured in all samples and temperature dependence of the electrical properties shows a behavior of degenerate semiconductors for Bi-doped samples. The electrical resistivity and the Seebeck coefficient were greatly reduced with Bi, which was mainly due to the increment of the carrier concentration. The samples have maximum carrier concentration of 8.2 × 1018 cm-3. The largest ZT value of 0.61 was achieve at 873 K for Mg2.04SiBi0.02. The Bi-doping was found to be an effective n-type dopant to adjust carrier concentration. [Figure not available: see fulltext.

  2. Unified Quantum Model of Work Generation in Thermoelectric Generators, Solar and Fuel Cells

    Directory of Open Access Journals (Sweden)

    Robert Alicki

    2016-05-01

    Full Text Available In the previous papers, the idea of “hidden oscillations” has been applied to explain work generation in semiconductor photovoltaic cells and thermoelectric generators. The aim of this paper is firstly to extend this approach to fuel cells and, secondly, to create a unified quantum model for all types of such devices. They are treated as electron pumps powered by heat or chemical engines. The working fluid is electron gas and the necessary oscillating element (“piston” is provided by plasma oscillation. Those oscillations are localized around the junction that also serves as a diode rectifying fast electric charge oscillations and yielding a final output direct current (DC. The dynamics of the devices are governed by the Markovian master equations that can be derived in a rigorous way from the underlying Hamiltonian models and are consistent with the laws of thermodynamics. The new ingredient is the derivation of master equations for systems driven by chemical reactions.

  3. Nanocomposites with High Thermoelectric Figures of Merit

    Science.gov (United States)

    Chen, Gang (Inventor); Dresselhaus, Mildred (Inventor); Ren, Zhifeng (Inventor)

    2015-01-01

    The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k(sub B)T, wherein k(sub B) is the Boltzman constant and T is an average temperature of said nanocomposite composition.

  4. Thermoelectric properties of finite graphene antidot lattices

    DEFF Research Database (Denmark)

    Gunst, Tue; Markussen, Troels; Jauho, Antti-Pekka

    2011-01-01

    We present calculations of the electronic and thermal transport properties of graphene antidot lattices with a finite length along the transport direction. The calculations are based on the π-tight-binding model and the Brenner potential. We show that both electronic and thermal transport...... properties converge fast toward the bulk limit with increasing length of the lattice: only a few repetitions (≃6) of the fundamental unit cell are required to recover the electronic band gap of the infinite lattice as a transport gap for the finite lattice. We investigate how different antidot shapes...... and sizes affect the thermoelectric properties. The resulting thermoelectric figure of merit, ZT, can exceed 0.25, and it is highly sensitive to the atomic arrangement of the antidot edges. Specifically, hexagonal holes with pure armchair edges lead to an order-of-magnitude larger ZT as compared to pure...

  5. Thermoelectric integrated membrane evaporation water recovery technology

    Science.gov (United States)

    Roebelen, G. J., Jr.; Winkler, H. E.; Dehner, G. F.

    1982-01-01

    The recently developed Thermoelectric Integrated Membrane Evaporation Subsystem (TIMES) offers a highly competitive approach to water recovery from waste fluids for future on-orbit stations such as the Space Operations Center. Low power, compactness and gravity insensitive operation are featured in this vacuum distillation subsystem that combines a hollow fiber membrane evaporator with a thermoelectric heat pump. The hollow fiber elements provide positive liquid/gas phase control with no moving parts other than pumps and an accumulator, thus solving problems inherent in other reclamation subsystem designs. In an extensive test program, over 850 hours of operation were accumulated during which time high quality product water was recovered from both urine and wash water at an average steady state production rate of 2.2 pounds per hour.

  6. Thermoelectric properties of silicon nano pillars

    Energy Technology Data Exchange (ETDEWEB)

    Stranz, Andrej; Soekmen, Uensal; Waag, Andreas; Peiner, Erwin [Institute of Semiconductor Technology, Braunschweig (Germany)

    2010-07-01

    In order to establish silicon as a efficient thermoelectric material, its high thermal conductivity has to be reduced which is feasible, e.g., by nano structuring. Therefore, in this study Si-based sub-micron pillars of various dimensions were investigated. Using anisotropic etching followed by thermal oxidation we could fabricate pillars of diameters <500 nm, about 25 {mu}m in height with aspect ratios of more than 50. The distance between the pillars was varied from 500 nm to 10 micron. Besides the fabrication and structural characterization of sub-micron silicon pillars, and adequate metrology for measuring their thermoelectric properties was implemented. Commercial tungsten probes and self-made gold probes, as well as Wollaston wire probes were used for electrical and thermal conductivity, as well as Seebeck voltage measurements on single pillars in a scanning electron microscope equipped with nano manipulators.

  7. Thermoelectric power of PrMg3

    Science.gov (United States)

    Isikawa, Yosikazu; Somiya, Kazuya; Koyanagi, Huruto; Mizushima, Toshio; Kuwai, Tomohiko; Tayama, Takashi

    2010-01-01

    PrMg3 is supposed to be one of the strongly correlated electron systems originated from the hybridization between the Pr 4f and conduction electrons, because the gigantic electronic specific heat coefficient C/T was observed at low temperatures. However, a typical behaviour of - ln T dependence was not observed in the temperature dependence of the electrical resistivity. The thermoelectric power S is a powerful tool to investigate the density of states at the Fermi energy. We measured carefully the thermoelectric power of PrMg3 in the temperature range between 2 and 300 K. S is extremely small, ranged within ±1 μV/K over the whole temperature. The value of S/T at low temperature limit was also significantly smaller than expected from the specific heat results. We therefore conclude that the density of state at the Fermi level is not enhanced in PrMg3.

  8. Thermoelectric power of PrMg3

    International Nuclear Information System (INIS)

    Isikawa, Yosikazu; Somiya, Kazuya; Koyanagi, Huruto; Mizushima, Toshio; Kuwai, Tomohiko; Tayama, Takashi

    2010-01-01

    PrMg 3 is supposed to be one of the strongly correlated electron systems originated from the hybridization between the Pr 4f and conduction electrons, because the gigantic electronic specific heat coefficient C/T was observed at low temperatures. However, a typical behaviour of - ln T dependence was not observed in the temperature dependence of the electrical resistivity. The thermoelectric power S is a powerful tool to investigate the density of states at the Fermi energy. We measured carefully the thermoelectric power of PrMg 3 in the temperature range between 2 and 300 K. S is extremely small, ranged within ±1 μV/K over the whole temperature. The value of S/T at low temperature limit was also significantly smaller than expected from the specific heat results. We therefore conclude that the density of state at the Fermi level is not enhanced in PrMg 3 .

  9. Manipulation of charge transport in thermoelectrics

    Science.gov (United States)

    Zhang, Xinyue; Pei, Yanzhong

    2017-12-01

    While numerous improvements have been achieved in thermoelectric materials by reducing the lattice thermal conductivity (κL), electronic approaches for enhancement can be as effective, or even more. A key challenge is decoupling Seebeck coefficient (S) from electrical conductivity (σ). The first order approximation - a single parabolic band assumption with acoustic scattering - leads the thermoelectric power factor (S2σ) to be maximized at a constant reduced Fermi level (η 0.67) and therefore at a given S of 167 μV/K. This simplifies the challenge of maximization of σ at a constant η, leading to a large number of degenerate transport channels (band degeneracy, Nv) and a fast transportation of charges (carrier mobility, μ). In this paper, existing efforts on this issue are summarized and future prospectives are given.

  10. Kinetic theory of thermotransport of polar semiconductors: Degenerate limit

    Energy Technology Data Exchange (ETDEWEB)

    Rangel-Huerta, A. [Facultad de Ciencias de la Computacion Benemerita, Universidad Autonoma de Puebla, 14 Sur y San Claudio C.U., Puebla 72570 (Mexico); Rodriguez-Meza, M.A. [Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico D.F. 11801 (Mexico)

    2005-08-01

    We develop a kinetic theory approach from the semiclassical Boltzmann transport equation for the thermotransport of electrons in degenerate polar semiconductors. The method of moments applied to the Boltzmann equation gives us a set of hydrodynamical equations which are closed up to thirteen relevant variables, including energy density, the stress tensor and the heat flux in the description. The closure of the balance equations is achieved by evaluating the higher order momenta, as well as the production terms, through a non equilibrium distribution function coming from the maximum entropy principle. We assume that electronoptical polar phonon interaction is the leading scattering process in order to obtain analytical expressions for both, the characteristic relaxation times and the usual thermoelectric coefficients. We also show that in this case the Onsager symmetry relationship is not satisfied. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  12. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  13. Scanning thermal microscopy of thermoelectric nanostructures

    Czech Academy of Sciences Publication Activity Database

    Vaniš, Jan; Zelinka, Jiří; Zeipl, Radek; Jelínek, Miroslav; Kocourek, Tomáš; Remsa, Jan; Navrátil, Jiří

    2016-01-01

    Roč. 45, č. 3 (2016), s. 1734-1739 ISSN 0361-5235 R&D Projects: GA ČR(CZ) GA15-05864S; GA ČR(CZ) GA13-33056S Institutional support: RVO:68378271 ; RVO:61389013 Keywords : thermoelectric layer * scanning thermal microscopy * pulsed laser deposition * laser deposition * secondary ion mass spectrometry Subject RIV: BM - Solid Matter Physics ; Magnetism; CA - Inorganic Chemistry (UMCH-V) Impact factor: 1.579, year: 2016

  14. New thinking on modeling of thermoelectric devices

    International Nuclear Information System (INIS)

    Zhang, T.

    2016-01-01

    Highlights: • New model was developed for performance calculation of thermoelectric devices. • The model takes into account the temperature-dependent material properties. • It takes into account the spatial-dependent heat flow rate in thermoelement. • It can take into account the heat and electricity losses at the junctions. • It can probe a broad range of parameters for module performance optimization. - Abstract: The performance of a thermoelectric power generation (TEPG) module and a device designed to convert engine exhaust heat directly into electricity was studied under different operating conditions using a proposed thermoelectric (TE) model in this work. The proposed model was obtained from the first law of thermodynamics, Ohm’s law, nonlinear analytical solution of thermoelectric transport equation, and a control volume that represents a typical TEPG module or device such that the temperature-dependent material properties of, the spatial-dependent heat flow rate through the TE element, and the interfacial electrical and thermal losses can be taken into account in the performance calculation. The performance of a typical TEPG module under a broad range of cold-side temperatures and the temperature differences between its hot-side and cold-side was calculated by the proposed model and the results agree very well with the existing model predictions. Comparison between the model predictions and the experimental results confirmed that reducing the interfacial electric resistance can enhance the module performance. The inter-dependence of the key thermal and TEPG system design and optimization parameters was examined for a real TEPG device using the proposed model and an optimal module fill factor of 0.35 was found within the given mass flow rates between 0.0154 and 0.052 kg/s of exhaust stream.

  15. Advanced Radioisotope Power Systems Segmented Thermoelectric Research

    Science.gov (United States)

    Caillat, Thierry

    2004-01-01

    Flight times are long; - Need power systems with >15 years life. Mass is at an absolute premium; - Need power systems with high specific power and scalability. 3 orders of magnitude reduction in solar irradiance from Earth to Pluto. Nuclear power sources preferable. The Overall objective is to develop low mass, high efficiency, low-cost Advanced Radioisotope Power System with double the Specific Power and Efficiency over state-of-the-art Radioisotope Thermoelectric Generators (RTGs).

  16. High thermoelectric performance of graphite nanofibers

    OpenAIRE

    Tran, Van-Truong; Saint-Martin, Jérôme; Dollfus, Philippe; Volz, Sebastian

    2017-01-01

    Graphite nanofibers (GNFs) have been demonstrated to be a promising material for hydrogen storage and heat management in electronic devices. Here, by means of first-principles and transport simulations, we show that GNFs can also be an excellent material for thermoelectric applications thanks to the interlayer weak van der Waals interaction that induces low thermal conductance and a step-like shape in the electronic transmission with mini-gaps, which are necessary ingredients to achieve high ...

  17. Lunar base thermoelectric power station study

    Science.gov (United States)

    Determan, William; Frye, Patrick; Mondt, Jack; Fleurial, Jean-Pierre; Johnson, Ken; Stapfer, G.; Brooks, Michael D.; Heshmatpour, Ben

    2006-01-01

    Under NASA's Project Prometheus, the Nuclear Systems Program, the Jet Propulsion Laboratory, Pratt & Whitney Rocketdyne, and Teledyne Energy Systems have teamed with a number of universities, under the Segmented Thermoelectric Multicouple Converter (STMC) program, to develop the next generation of advanced thermoelectric converters for space reactor power systems. Work on the STMC converter assembly has progressed to the point where the lower temperature stage of the segmented multicouple converter assembly is ready for laboratory testing and the upper stage materials have been identified and their properties are being characterized. One aspect of the program involves mission application studies to help define the potential benefits from the use of these STMC technologies for designated NASA missions such as the lunar base power station where kilowatts of power are required to maintain a permanent manned presence on the surface of the moon. A modular 50 kWe thermoelectric power station concept was developed to address a specific set of requirements developed for this mission. Previous lunar lander concepts had proposed the use of lunar regolith as in-situ radiation shielding material for a reactor power station with a one kilometer exclusion zone radius to minimize astronaut radiation dose rate levels. In the present concept, we will examine the benefits and requirements for a hermetically-sealed reactor thermoelectric power station module suspended within a man-made lunar surface cavity. The concept appears to maximize the shielding capabilities of the lunar regolith while minimizing its handling requirements. Both thermal and nuclear radiation levels from operation of the station, at its 100-m exclusion zone radius, were evaluated and found to be acceptable. Site preparation activities are reviewed and well as transport issues for this concept. The goal of the study was to review the entire life cycle of the unit to assess its technical problems and technology

  18. Thermoelectric simple and multilayers prepared by laser

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Zeipl, Radek; Vaniš, Jan; Kocourek, Tomáš; Remsa, Jan; Navrátil, Jiří; Lorinčík, J.

    2016-01-01

    Roč. 4, Jan (2016), s. 52-64 ISSN 2327-6045 R&D Projects: GA ČR(CZ) GA13-33056S Institutional support: RVO:68378271 ; RVO:61389013 Keywords : PLD * RTA * laser deposition * annealing * thermoelectric layer * harman * FeSb 2 Te * Ce 0.1 * Fe 0.7 * Co 3.3 * Sb 12 Subject RIV: BM - Solid Matter Physics ; Magnetism

  19. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  20. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr