Self-trapped states in proteins?

NARCIS (Netherlands)

Austin, R. H.; Xie, A. H.; van der Meer, L.; Shinn, M.; Neil, G.

2003-01-01

We show here that the temperature dependence of the amide I band of myoglobin shows evidence for a low-lying S-elf-trapped state at 6.15 mum. We have conducted a careful set of picosecond pump-probe experiments providing results as a function of temperature. and wavelength and show that this

Tunneling of self-trapped states and formation of a band

International Nuclear Information System (INIS)

Yonemitsu, K.

1993-12-01

Tunneling of a self-trapped kink and formation of a band are studied semi classically in the one-dimensional extended Peierls-Hubbard model near half filling, considering up to Gaussian fluctuations around imaginary-time-dependent periodic motion of electrons and phonons on the stationary phase of the action derived using Slater determinants. In the strong-coupling limit of both the Holstein and attractive Hubbard models, it reproduces analytically-known effective hopping of a single bipolaron because the tunneling involves only one in this limit. The method gives new results in other general cases and is easily applied to excited or more complex systems. 13 refs, 4 figs

Electrons in feldspar I: On the wavefunction of electrons trapped at simple lattice defects

DEFF Research Database (Denmark)

Poolton, H.R.J.; Wallinga, J.; Murray, A.S.

2002-01-01

The purpose of this article is to make an initial consideration of the physical properties of electrons trapped at classic hydrogenic lattice defects in feldspar. We are particularly interested to determine the radial extent of the electron wavefunctions in the ground and excited states. It is sh......The purpose of this article is to make an initial consideration of the physical properties of electrons trapped at classic hydrogenic lattice defects in feldspar. We are particularly interested to determine the radial extent of the electron wavefunctions in the ground and excited states...

Features of exciton dynamics in molecular nanoclusters (J-aggregates): Exciton self-trapping (Review Article)

Science.gov (United States)

Malyukin, Yu. V.; Sorokin, A. V.; Semynozhenko, V. P.

2016-06-01

We present thoroughly analyzed experimental results that demonstrate the anomalous manifestation of the exciton self-trapping effect, which is already well-known in bulk crystals, in ordered molecular nanoclusters called J-aggregates. Weakly-coupled one-dimensional (1D) molecular chains are the main structural feature of J-aggregates, wherein the electron excitations are manifested as 1D Frenkel excitons. According to the continuum theory of Rashba-Toyozawa, J-aggregates can have only self-trapped excitons, because 1D excitons must adhere to barrier-free self-trapping at any exciton-phonon coupling constant g = ɛLR/2β, wherein ɛLR is the lattice relaxation energy, and 2β is the half-width of the exciton band. In contrast, very often only the luminescence of free, mobile excitons would manifest in experiments involving J-aggregates. Using the Urbach rule in order to analyze the low-frequency region of the low-temperature exciton absorption spectra has shown that J-aggregates can have both a weak (g 1) exciton-phonon coupling. Moreover, it is experimentally demonstrated that under certain conditions, the J-aggregate excited state can have both free and self-trapped excitons, i.e., we establish the existence of a self-trapping barrier for 1D Frenkel excitons. We demonstrate and analyze the reasons behind the anomalous existence of both free and self-trapped excitons in J-aggregates, and demonstrate how exciton-self trapping efficiency can be managed in J-aggregates by varying the values of g, which is fundamentally impossible in bulk crystals. We discuss how the exciton-self trapping phenomenon can be used as an alternate interpretation of the wide band emission of some J-aggregates, which has thus far been explained by the strongly localized exciton model.

Injection into electron plasma traps

International Nuclear Information System (INIS)

Gorgadze, Vladimir; Pasquini, Thomas A.; Fajans, Joel; Wurtele, Jonathan S.

2003-01-01

Computational studies and experimental measurements of plasma injection into a Malmberg-Penning trap reveal that the number of trapped particles can be an order of magnitude higher than predicted by a simple estimates based on a ballistic trapping model. Enhanced trapping is associated with a rich nonlinear dynamics generated by the space-charge forces of the evolving trapped electron density. A particle-in-cell simulation is used to identify the physical mechanisms that lead to the increase in trapped electrons. The simulations initially show strong two-stream interactions between the electrons emitted from the cathode and those reflected off the end plug of the trap. This is followed by virtual cathode oscillations near the injection region. As electrons are trapped, the initially hollow longitudinal phase-space is filled, and the transverse radial density profile evolves so that the plasma potential matches that of the cathode. Simple theoretical arguments are given that describe the different dynamical regimes. Good agreement is found between simulation and theory

Self-generated zonal flows in the plasma turbulence driven by trapped-ion and trapped-electron instabilities

Energy Technology Data Exchange (ETDEWEB)

Drouot, T.; Gravier, E.; Reveille, T.; Collard, M. [Institut Jean Lamour, UMR 7198 CNRS - Université de Lorraine, 54 506 Vandoeuvre-lès-Nancy Cedex (France)

2015-10-15

This paper presents a study of zonal flows generated by trapped-electron mode and trapped-ion mode micro turbulence as a function of two plasma parameters—banana width and electron temperature. For this purpose, a gyrokinetic code considering only trapped particles is used. First, an analytical equation giving the predicted level of zonal flows is derived from the quasi-neutrality equation of our model, as a function of the density fluctuation levels and the banana widths. Then, the influence of the banana width on the number of zonal flows occurring in the system is studied using the gyrokinetic code. Finally, the impact of the temperature ratio T{sub e}/T{sub i} on the reduction of zonal flows is shown and a close link is highlighted between reduction and different gyro-and-bounce-average ion and electron density fluctuation levels. This reduction is found to be due to the amplitudes of gyro-and-bounce-average density perturbations n{sub e} and n{sub i} gradually becoming closer, which is in agreement with the analytical results given by the quasi-neutrality equation.

Kinetic features and non-stationary electron trapping in paraxial magnetic nozzles

Science.gov (United States)

Sánchez-Arriaga, G.; Zhou, J.; Ahedo, E.; Martínez-Sánchez, M.; Ramos, J. J.

2018-03-01

The paraxial expansion of a collisionless plasma jet into vacuum, guided by a magnetic nozzle, is studied with an Eulerian and non-stationary Vlasov-Poisson solver. Parametric analyzes varying the magnetic field expansion rate, the size of the simulation box, and the electrostatic potential fall are presented. After choosing the potential fall leading to a zero net current beam, the steady states of the simulations exhibit a quasi-neutral region followed by a downstream sheath. The latter, an unavoidable consequence of the finite size of the computational domain, does not affect the quasi-neutral region if the box size is chosen appropriately. The steady state presents a strong decay of the perpendicular temperature of the electrons, whose profile versus the inverse of the magnetic field does not depend on the expansion rate within the quasi-neutral region. As a consequence, the electron distribution function is highly anisotropic downstream. The simulations revealed that the ions reach a higher velocity during the transient than in the steady state and their distribution functions are not far from mono-energetic. The density percentage of the population of electrons trapped during the transient, which is computed self-consistently by the code, is up to 25% of the total electron density in the quasi-neutral region. It is demonstrated that the exact amount depends on the history of the system and the steady state is not unique. Nevertheless, the amount of trapped electrons is smaller than the one assumed heuristically by kinetic stationary theories.

Electron self-injection in the donut bubble wakefield

Science.gov (United States)

Firouzjaei, Ali Shekari; Shokri, Babak

2018-05-01

We investigate electron self-injection in a donut bubble wakefield driven by a Laguerre-Gauss laser pulse. The present work discusses the electron capture by modeling the analytical donut bubble field. We discuss the self-injection of the electrons from plasma for various initial conditions and then compare the results. We show that the donut bubble can trap plasma electrons forming a hollow beam. We present the phase spaces and longitudinal momentum evolution for the trapped electrons in the bubble and discuss their characteristic behaviors and stability. It will be shown that the electrons self-injected in the front are ideal for applications in which a good stability and low energy spread are essential.

Electron trapping during irradiation in reoxidized nitrided oxide

International Nuclear Information System (INIS)

Mallik, A.; Vasi, J.; Chandorkar, A.N.

1993-01-01

Isochronal detrapping experiments have been performed following irradiation under different gate biases in reoxidized nitrided oxide (RNO) MOS capacitors. These show electron trapping by the nitridation-induced electron traps at low oxide fields during irradiation. A difference in the detrapping behavior of trapped holes and electrons is observed, with trapped holes being detrapped at relatively lower temperatures compared to trapped electrons. Electron trapping shows a strong dependence on tile magnitude of the applied gate bias during irradiation but is independent of its polarity. Conventional oxide devices, as expected, do not show any electron trapping during irradiation by the native electron traps. Finally, a comparison of the isochronal detrapping behavior following irradiation and following avalanche injection of electrons has been made to estimate the extent of electron trapping. The results show that electron trapping by the nitridation-induced electron traps does not play the dominant role in improving radiation performance of RNO, though its contribution cannot be completely neglected for low oxide field irradiations

A multidimensional theory for electron trapping by a plasma wake generated in the bubble regime

International Nuclear Information System (INIS)

Kostyukov, I; Nerush, E; Pukhov, A; Seredov, V

2010-01-01

We present a theory for electron self-injection in nonlinear, multidimensional plasma waves excited by a short laser pulse in the bubble regime or by a short electron beam in the blowout regime. In these regimes, which are typical for electron acceleration in the last impressive experiments, the laser radiation pressure or the electron beam charge pushes out plasma electrons from some region, forming a plasma cavity or a bubble with a huge ion charge. The plasma electrons can be trapped in the bubble and accelerated by the plasma wakefields up to a very high energy. We derive the condition of the electron trapping in the bubble. The developed theory predicts the trapping cross section in terms of the bubble radius and the bubble velocity. It is found that the dynamic bubble deformations observed in the three-dimensional (3D) particle-in-cell (PIC) simulations influence the trapping process significantly. The bubble elongation reduces the gamma-factor of the bubble, thereby strongly enhancing self-injection. The obtained analytical results are in good agreement with the 3D PIC simulations.

Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states

International Nuclear Information System (INIS)

Patrocinio, Weslley S.; Ribeiro, Mauro; Fonseca, Leonardo R.C.

2012-01-01

Silicon nitride, with a permittivity mid-way between SiO 2 and common high-k materials such as HfO 2 , is widely used in microelectronics as an insulating layer on top of oxides where it serves as an impurity barrier with the positive side effect of increasing the dielectric constant of the insulator when it is SiO 2 . It is also employed as charge storage in nonvolatile memory devices thanks to its high concentration of charge traps. However, in the case of memories, it is still unclear which defects are responsible for charge trapping and what is the impact of defect concentration on the structural and electronic properties of SiN x . Indeed, for the amorphous phase the band gap was measured in the range 5.1–5.5 eV, with long tails in the density of states penetrating the gap region. It is still not clear which defects are responsible for the tails. On the other hand, the K-center defects have been associated with charge trapping, though its origin is assigned to one Si back bond. To investigate the contribution of defect states to the band edge tails and band gap states, we adopted the β phase of stoichiometric silicon nitride (β-Si 3 N 4 ) as our model material and calculated its electronic properties employing ab initio DFT/LDA simulations with self-energy correction to improve the location of defect states in the SiN x band gap through the correction of the band gap underestimation typical of DFT/LDA. We considered some important defects in SiN x , as the Si anti-site and the N vacancy with H saturation, in two defect concentrations. The location of our calculated defect levels in the band gap correlates well with the available experimental data, offering a structural explanation to the measured band edge tails and charge trapping characteristics.

MOS Capacitance—Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

International Nuclear Information System (INIS)

Jie Binbin; Sah Chihtang

2011-01-01

Low-frequency and high-frequency Capacitance—Voltage (C—V) curves of Metal—Oxide—Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from > 0.01C OX to > 10C OX . Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, N DD , the ground state electron trapping energy level depth measured from the conduction band edge, E C –E D , the degeneracy of the trapped electron at the ground state, g D , the device temperature, T, and the gate oxide thickness, x OX . (invited papers)

The self-trapping of anion excitons in alkali halides at elastic deformation

International Nuclear Information System (INIS)

Tulepbergenov, S.K.; Dzhumanov, S.; Spivak-Lavrov, I.F.; Shunkeev, K.Sh.

2001-01-01

The self-trapping of electronic excitations (EE) (excitons, holes and electrons) in alkali halides (AH), fluorides and oxides plays an important roles in luminescence and defect formation. Therein the specific features of self-trapping of EE in various materials are essentially different. In particular, the self-trapping of excitons in some AH (i.e. alkali iodides and bromides) occurs with overcoming of the potential barrier and in other AH (e.g. alkali fluorides and chlorides) such a barrier is absent. Here we develop the continuum theory of self-trapping of within the adiabatic approximation elastically stressed AH. In the continuum model of solids the functional of the total energy of are interacting exciton-phonon system in the deformed ionic crystal just as in the undeformed crystal depends on the dilation Δ(r) described by the deformation potential of acoustic phonon, the electrostatic potential φ[r) due to the lattice polarization at optical lattice vibrations and the wave function of exciton chosen for hydro statically and uniaxially stressed 3D crystals. The functionals of the total energy of the interfacing exciton-phonon system E{Δ(r),φ(r),ψ(r)} are minimized relative to Δ, φ and ψ for the cases of isotropic and anisotropic 3D crystals. As a result, we obtained the functionals depending on μ and determined their possible extremum. We have show that the linear deformations under the hydrostatic and uniaxial stress at 80 K lead to the decreasing of the self trapping barrier for exciton and to the increasing of the luminescence of self-trapped excitons (STE). While the nonlinear deformations under the such stress at 80 K lead to the increasing of the self-trapping barrier for excitons and to the decreasing at the STE luminescence in AH. At T=0 K the small hydrostatic and uniaxial pressures lead to the same effects. Further at hydrostatic and uniaxial compressions of AH the minimums of the adiabatic potentials of quasifree and STE are shifted to

On the mobility of delocalized and self-trapped positronium states in ionic crystals

CERN Document Server

Bondarev, I V

2003-01-01

The temperature dependence of the diffusivity is studied for delocalized and self-trapped positronium (Ps) atoms in ionic crystals. Detailed calculations taking into account low-temperature and inelastic scattering corrections and a Ps scattering form-factor have been performed for delocalized Ps. Low-temperature and inelastic corrections to the delocalized Ps diffusivity are shown to be essential below several tens of K, while the form-factor contribution is negligibly small up to thousand K. The mobility of self-trapped Ps is analyzed within the framework of a small polaron approach. The hopping contribution to the self-trapped Ps diffusivity is shown to be adiabatic in its physical nature. The tunnel contribution is in general not small and may turn out to be dominating even at very high temperatures. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

Self-Trapping Self-Repelling Random Walks

Science.gov (United States)

Grassberger, Peter

2017-10-01

Although the title seems self-contradictory, it does not contain a misprint. The model we study is a seemingly minor modification of the "true self-avoiding walk" model of Amit, Parisi, and Peliti in two dimensions. The walks in it are self-repelling up to a characteristic time T* (which depends on various parameters), but spontaneously (i.e., without changing any control parameter) become self-trapping after that. For free walks, T* is astronomically large, but on finite lattices the transition is easily observable. In the self-trapped regime, walks are subdiffusive and intermittent, spending longer and longer times in small areas until they escape and move rapidly to a new area. In spite of this, these walks are extremely efficient in covering finite lattices, as measured by average cover times.

A way for evaluating parameters of electron transport in non-polar molecular liquids derived from analysis of the trapped electron recombination kinetics

International Nuclear Information System (INIS)

Lukin, L.V.

2012-01-01

The geminate recombination kinetics of electron-ion pairs produced by high energy radiation in liquid hydrocarbons is considered in the two state model of electron transport. The purpose of the study is to relate the trapped electron transient optical absorption, observed in the pulse radiolysis experiments, to fundamental parameters of electron transport in liquid. It is shown that measurements of the half-life time and amplitude of the trapped electron decay curve allow one to find the electron life time in a localized state. - Highlights: ► A two state electron model is applied to geminate charge recombination. ► Time dependence of trapped electrons is computed for liquid isooctane and squalane. ► Electron decay kinetics depends on electron life time in a localized state. ► Key parameters of electron transport are found from the pulse radiolysis studies.

Electron traps in semiconducting polymers : Exponential versus Gaussian trap distribution

NARCIS (Netherlands)

Nicolai, H. T.; Mandoc, M. M.; Blom, P. W. M.

2011-01-01

The low electron currents in poly(dialkoxy-p-phenylene vinylene) (PPV) derivatives and their steep voltage dependence are generally explained by trap-limited conduction in the presence of an exponential trap distribution. Here we demonstrate that the electron transport of several PPV derivatives can

Electron traps in semiconducting polymers: exponential versus Gaussian trap distribution

NARCIS (Netherlands)

Nicolai, H.T.; Mandoc, M.M.; Blom, P.W.M.

2011-01-01

The low electron currents in poly(dialkoxy-p-phenylene vinylene) (PPV) derivatives and their steep voltage dependence are generally explained by trap-limited conduction in the presence of an exponential trap distribution. Here we demonstrate that the electron transport of several PPV derivatives can

Nonlinear trapped electron mode and anomalous heat transport in tokamaks

International Nuclear Information System (INIS)

Kaw, P.K.

1982-01-01

We take the phenomenological point of view that the anomalous electron thermal conductivity produced by the non-linear trapped electron mode should also influence the stability properties of the mode itself. Using a model equation, we show that this effect makes the mode self-stabilizing. A simple expression for the anomalous thermal conductivity is derived, and its scaling properties are discussed. (orig.)

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan [imec, Kapeldreef 75, 3001 Leuven (Belgium); Bakeroot, Benoit [imec, Kapeldreef 75, 3001 Leuven (Belgium); Centre for Microsystems Technology, Ghent University, 9052 Gent (Belgium); Roelofs, Robin [ASM, Kapeldreef 75, 3001 Leuven (Belgium)

2015-08-31

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

Stability of trapped electrons in SiO2

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Flament, O.; Leray, J.L.

1998-01-01

Electron trapping near the Si/SiO 2 interface plays a crucial role in mitigating the response of MOS devices to ionizing radiation or high-field stress. These electrons offset positive charge due to trapped holes, and can be present at densities exceeding 10 12 cm -2 in the presence of a similar density of trapped positive charge. The nature of the defects that serve as hosts for trapped electrons in the near-interfacial SiO 2 is presently unknown, although there is compelling evidence that these defects are often intimately associated with trapped holes. This association is depicted most directly in the model of Lelis et al., which suggests that trapped electrons and holes occupy opposite sides of a compensated E center in SiO 2 . Charge exchange between electron traps and the Si can occur over a wide range of time scales, depending on the trap depth and location relative to the Si/SiO 2 interface. Here the authors report a detailed study of the stability of electron traps associated with trapped holes near the Si/SiO 2 interface

Neutralizing trapped electrons on the hydrogenated surface of a diamond amplifier

Directory of Open Access Journals (Sweden)

Xiangyun Chang

2012-01-01

Full Text Available We discuss our investigation of electron trapping in a diamond amplifier (DA. Our previous work demonstrated that some electrons reaching the DA’s hydrogenated surface are not emitted. The state and the removal of these electrons is important for DA applications. We found that these stopped electrons are trapped, and cannot be removed by a strong reversed-polarity electric field; to neutralize this surface charge, holes must be sent to the hydrogenated surface to recombine with the trapped electrons through the Shockley-Read-Hall surface-recombination mechanism. We measured the time taken for such recombination on the hydrogenated surface, viz. the recombination time, as less than 5 ns, limited by the resolution of our test system. With this measurement, we demonstrated that DA could be operated in an rf cavity with frequency of a few hundred megahertz.

States of the electron in hydrocarbon liquids

International Nuclear Information System (INIS)

Mozumder, A.

2005-01-01

Some features of the stationary and dynamic states of the electron are critically examined. Outline of a quantum mechanical description of electron thermalization is attempted qualitatively. The effects of both the mean free path and the reaction inefficiency on electron-ion geminate escape probability are investigated by a recently developed Metropolis method. The trapped state is interpreted in terms of Anderson localization, yielding an approximate number of molecules interacting with the trapped electron

Stability of Trapped Electrons in SiO(2)

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.

1999-01-01

Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of ∼3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

Science.gov (United States)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

International Nuclear Information System (INIS)

Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

2014-01-01

Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

MOS Capacitance—Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

International Nuclear Information System (INIS)

Jie Binbin; Sah Chihtang

2011-01-01

Low-frequency and high-frequency capacitance—voltage curves of Metal—Oxide—Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications. (invited papers)

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Energy Technology Data Exchange (ETDEWEB)

Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Bisi, D.; Meneghesso, G.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Marcon, D.; Stoffels, S.; Van Hove, M.; Wu, T.-L.; Decoutere, S. [IMEC, Kapeldreef 75, 3001 Heverlee (Belgium)

2014-04-07

This paper describes an extensive analysis of the role of off-state and semi-on state bias in inducing the trapping in GaN-based power High Electron Mobility Transistors. The study is based on combined pulsed characterization and on-resistance transient measurements. We demonstrate that—by changing the quiescent bias point from the off-state to the semi-on state—it is possible to separately analyze two relevant trapping mechanisms: (i) the trapping of electrons in the gate-drain access region, activated by the exposure to high drain bias in the off-state; (ii) the trapping of hot-electrons within the AlGaN barrier or the gate insulator, which occurs when the devices are operated in the semi-on state. The dependence of these two mechanisms on the bias conditions and on temperature, and the properties (activation energy and cross section) of the related traps are described in the text.

Spectral response of crystalline acetanilide and N -methylacetamide: Vibrational self-trapping in hydrogen-bonded crystals

Science.gov (United States)

Edler, Julian; Hamm, Peter

2004-06-01

Femtosecond pump-probe and Fourier transform infrared spectroscopy is applied to compare the spectral response of the amide I band and the NH-stretching band of acetanilide (ACN) and N -methylacetamide (NMA), as well as their deuterated derivatives. Both molecules form hydrogen-bonded molecular crystals that are regarded to be model systems for polypeptides and proteins. The amide I bands of both ACN and NMA show a temperature-dependent sideband, while the NH bands are accompanied by a sequence of equidistantly spaced satellite peaks. These spectral anomalies are interpreted as a signature of vibrational self-trapping. Two different types of states can be identified in both crystals in the pump-probe signal: a delocalized free-exciton state and a set of localized self-trapped states. The phonons that mediate self-trapping in ACN and deuterated ACN are identified by their temperature dependence, confirming our previous results. The study shows that the substructure of the NH band in NMA (amide A and amide B bands) originates, at least partly, from vibrational self-trapping and not, as often assumed, from a Fermi resonance.

Kinetic Simulations of the Self-Focusing and Dissipation of Finite-Width Electron Plasma Waves

Energy Technology Data Exchange (ETDEWEB)

Winjum, B. J. [Univ. of California, Los Angeles, CA (United States); Berger, R. L. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Chapman, T. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Banks, J. W. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Brunner, S. [Federal Inst. of Technology, Lausanne (Switzerland)

2013-09-01

Two-dimensional simulations, both Vlasov and particle-in-cell, are presented that show the evolution of the field and electron distribution of finite-width, nonlinear electron plasma waves. The intrinsically intertwined effects of self-focusing and dissipation of field energy caused by electron trapping are studied in simulated systems that are hundreds of wavelengths long in the transverse direction but only one wavelength long and periodic in the propagation direction. From various initial wave states, both the width at focus Δm relative to the initial width Δ0 and the maximum field amplitude at focus are shown to be a function of the growth rate of the transverse modulational instability γ_TPMI divided by the loss rate of field energy ν_E to electrons escaping the trapping region. With dissipation included, an amplitude threshold for self-focusing γ_TPMI/ν_E~1 is found that supports the analysis of Rose [Phys. Plasmas 12, 012318 (2005)].

Dielectronic recombination measurements using the Electron Beam Ion Trap

International Nuclear Information System (INIS)

Knapp, D.A.

1991-01-01

We have used the Electron Beam Ion Trap at LLNL to study dielectronic recombination in highly charged ions. Our technique is unique because we observe the x-rays from dielectronic recombination at the same time we see x-rays from all other electron-ion interactions. We have recently taken high-resolution, state-selective data that resolves individual resonances

Nested Penning Trap as a Source of Singly Charged Ions

International Nuclear Information System (INIS)

Ordonez, C.A.

2003-01-01

In the work reported, the possibility of using a nested Penning trap as a high purity source of low-charge-state ions is studied. For the configuration considered, a relatively dense ion plasma is confined by a three-dimensional electric potential well. The three-dimensional well is produced by the electric field generated by both the trap electrodes and a trapped electron plasma. The ion and electron plasmas are each considered to have Maxwellian velocity distributions. However, it is shown that the electron plasma must have a temperature that is higher than that of the ion plasma when the ions have low charge states. The work reported includes a self-consistent prediction of a possible plasma equilibrium

Evaporative cooling of highly charged ions in EBIT [Electron Beam Ion Trap]: An experimental realization

International Nuclear Information System (INIS)

Schneider, M.B.; Levine, M.A.; Bennett, C.L.; Henderson, J.R.; Knapp, D.A.; Marrs, R.E.

1988-01-01

Both the total number and trapping lifetime of near-neon-like gold ions held in an electron beam ion trap have been greatly increased by a process of 'evaporative cooling'. A continuous flow of low-charge-state ions into the trap cools the high-charge-state ions in the trap. Preliminary experimental results using titanium ions as a coolant are presented. 8 refs., 6 figs., 2 tabs

Electron beam charging of insulators: A self-consistent flight-drift model

International Nuclear Information System (INIS)

Touzin, M.; Goeuriot, D.; Guerret-Piecourt, C.; Juve, D.; Treheux, D.; Fitting, H.-J.

2006-01-01

Electron beam irradiation and the self-consistent charge transport in bulk insulating samples are described by means of a new flight-drift model and an iterative computer simulation. Ballistic secondary electron and hole transport is followed by electron and hole drifts, their possible recombination and/or trapping in shallow and deep traps. The trap capture cross sections are the Poole-Frenkel-type temperature and field dependent. As a main result the spatial distributions of currents j(x,t), charges ρ(x,t), the field F(x,t), and the potential slope V(x,t) are obtained in a self-consistent procedure as well as the time-dependent secondary electron emission rate σ(t) and the surface potential V 0 (t). For bulk insulating samples the time-dependent distributions approach the final stationary state with j(x,t)=const=0 and σ=1. Especially for low electron beam energies E 0 G of a vacuum grid in front of the target surface. For high beam energies E 0 =10, 20, and 30 keV high negative surface potentials V 0 =-4, -14, and -24 kV are obtained, respectively. Besides open nonconductive samples also positive ion-covered samples and targets with a conducting and grounded layer (metal or carbon) on the surface have been considered as used in environmental scanning electron microscopy and common SEM in order to prevent charging. Indeed, the potential distributions V(x) are considerably small in magnitude and do not affect the incident electron beam neither by retarding field effects in front of the surface nor within the bulk insulating sample. Thus the spatial scattering and excitation distributions are almost not affected

Self-trapped excitons in LH2 bacteriochlorophyll-protein complexes under high pressure

International Nuclear Information System (INIS)

Timpmann, K.; Ellervee, Aleksandr; Kuznetsov, Anatoli; Laisaar, Arlentin; Trinkunas, Gediminas; Freiberg, Arvi

2003-01-01

The absorption and emission spectra of excitons in LH2 antenna complexes from the photosynthetic purple bacterium Rhodobacter sphaeroides have been studied under hydrostatic pressure. The measurements made between ambient pressure and 6 kbar over a broad temperature range reveal largely different rates of the pressure-induced shifts for the absorption and emission bands. Numerical calculations based on exciton polaron model provide evidence for the exciton self-trapping at ambient pressure as well as for the pressure stabilization of the self-trapped exciton states responsible for the emission, whereas the light absorbing states belong to nearly free excitons over the whole pressure and temperature ranges studied

A study of the profile of the E3 electron trap in GaAs

Energy Technology Data Exchange (ETDEWEB)

Kourkoutas, C.D. (TEI Athens (Greece). Dept. of Physics Chemistry and Material Technology); Kovacs, B.; Szentpali, B.; Somogyi, K. (Research Inst. for Technical Physics, Budapest (Hungary)); Euthymiou, P.C. (Athens Univ. (Greece)); Giakoumakis, G.E. (Ioannina Univ. (Greece). Dept. of Physics)

1994-01-01

Electron irradiation at room temperature introduces in GaAs a donor type electronic state Tx at 0.18 eV, which is associated with the E3 electron trap. The presence of Tx is observed at depths d > 1.5 [mu]m, which correspond to the limits of the depletion region under the highest applied reverse bias voltage, while the E3 trap concentration drops off into the same region. (author).

A study of the profile of the E3 electron trap in GaAs

International Nuclear Information System (INIS)

Kourkoutas, C.D.; Euthymiou, P.C.; Giakoumakis, G.E.

1994-01-01

Electron irradiation at room temperature introduces in GaAs a donor type electronic state Tx at 0.18 eV, which is associated with the E3 electron trap. The presence of Tx is observed at depths d > 1.5 μm, which correspond to the limits of the depletion region under the highest applied reverse bias voltage, while the E3 trap concentration drops off into the same region. (author)

Ultrafast carrier dynamics in tetrahedral amorphous carbon: carrier trapping versus electron-hole recombination

International Nuclear Information System (INIS)

Carpene, E; Mancini, E; Dallera, C; Schwen, D; Ronning, C; Silvestri, S De

2007-01-01

We report the investigation of the ultrafast carrier dynamics in thin tetrahedral amorphous carbon films by means of femtosecond time-resolved reflectivity. We estimated the electron-phonon relaxation time of a few hundred femtoseconds and we observed that under low optical excitation photo-generated carriers decay according to two distinct mechanisms attributed to trapping by defect states and direct electron-hole recombination. With high excitation, when photo-carrier and trap densities are comparable, a unique temporal evolution develops, as the time dependence of the trapping process becomes degenerate with the electron-hole recombination. This experimental evidence highlights the role of defects in the ultrafast electronic dynamics and is not specific to this particular form of carbon, but has general validity for amorphous and disordered semiconductors

EPR reversible signature of self-trapped holes in fictive temperature-treated silica glass

Science.gov (United States)

Lancry, Matthieu; Ollier, Nadège; Babu, B. H.; Herrero, Christian; Poumellec, Bertrand

2018-03-01

Post-mortem electron paramagnetic resonance spectroscopy experiments have been carried out between room temperature and 20 K to examine the radiation-induced defects in fictive temperature (Tf) treated Heraeus F300 silica (0.1 ppm OH, 1500 ppm Cl2). In particular, we focus our attention on Self-Trapped Hole (STH) centers detected in 1000 °C, 1100 °C, and 1200 °C Tf treated samples irradiated at room temperature by gamma rays at 6 kGy. By repeating annealing cycles between 77 and 300 K on the same samples, we observed that the EPR signal attributed to STH decreases as the temperature increases but in a reversible manner. We evidenced a deviation from the Curie law for T > 70 K and suggested an interpretation based on the decrease in the "strain-assisted TH" population by reversible excitation of the trapped hole to a delocalized state with an activation energy of 7.8 meV. This also means that the precursors of hole trapping sites (a local strain atomic configuration) remain stable until 300 K at least.

Saturation of backward stimulated scattering of laser in kinetic regime: Wavefront bowing, trapped particle modulational instability, and trapped particle self-focusing of plasma waves

International Nuclear Information System (INIS)

Yin, L.; Albright, B. J.; Bowers, K. J.; Daughton, W.; Rose, H. A.

2008-01-01

Backward stimulated Raman and Brillouin scattering (SRS and SBS) of laser are examined in the kinetic regime using particle-in-cell simulations. The SRS reflectivity measured as a function of the laser intensity in a single hot spot from two-dimensional (2D) simulations shows a sharp onset at a threshold laser intensity and a saturated level at higher intensities, as obtained previously in Trident experiments [D. S. Montgomery et al., Phys. Plasmas 9, 2311 (2002)]. In these simulations, wavefront bowing of electron plasma waves (ion acoustic waves) due to the trapped particle nonlinear frequency shift, which increases with laser intensity, is observed in the SRS (SBS) regime for the first time. Self-focusing from trapped particle modulational instability (TPMI) [H. A. Rose, Phys. Plasmas 12, 12318 (2005)] is shown to occur in both two- and three-dimensional SRS simulations. The key physics underlying nonlinear saturation of SRS is identified as a combination of wavefront bowing, TPMI, and self-focusing of electron plasma waves. The wavefront bowing marks the beginning of SRS saturation and self-focusing alone is sufficient to terminate the SRS reflectivity, both effects resulting from cancellation of the source term for SRS and from greatly increased dissipation rate of the electron plasm waves. Ion acoustic wave bowing also contributes to the SBS saturation. Velocity diffusion by transverse modes and rapid loss of hot electrons in regions of small transverse extent formed from self-focusing lead to dissipation of the wave energy and an increase in the Landau damping rate in spite of strong electron trapping that reduces Landau damping initially. The ranges of wavelength and growth rate associated with transverse breakup of the electron-plasma wave are also examined in 2D speckle simulations as well as in 2D periodic systems from Bernstein-Greene-Kruskal equilibrium and are compared with theory predictions

A nonlinear bounce kinetic equation for trapped electrons

International Nuclear Information System (INIS)

Gang, F.Y.

1990-03-01

A nonlinear bounce averaged drift kinetic equation for trapped electrons is derived. This equation enables one to compute the nonlinear response of the trapped electron distribution function in terms of the field-line projection of a potential fluctuation left-angle e -inqθ φ n right-angle b . It is useful for both analytical and computational studies of the nonlinear evolution of short wavelength (n much-gt 1) trapped electron mode-driven turbulence. 7 refs

Self-trapping nature of Tl nanoclusters on the Si(111)-7x7 surface

International Nuclear Information System (INIS)

Hwang, C G; Kim, N D; Lee, G; Shin, S Y; Kim, J S; Chung, J W

2008-01-01

We have studied properties of thallium (Tl) nanoclusters formed on the Si(111)-7x7 surface at room temperature (RT) by utilizing photoemission spectroscopy (PES) and high-resolution electron-energy-loss spectroscopy (HREELS) combined with first principles calculations. Our PES data reveal that the surface states stemming from the Si substrate remain quite inert with Tl adsorption producing no Tl-induced state until saturation at Tl coverage θ=0.21 monolayers. Such a behavior, in sharp contrast with the extremely reactive surface states upon the formation of Na or Li nanoclusters, together with the presence of a unique Tl-induced loss peak in HREELS spectra suggests no strong Si-Tl bonding, and is well understood in terms of gradual filling of Si dangling bonds with increasing θ. Our calculation further indicates the presence of several metastable atomic structures of Tl nanoclusters at RT rapidly transforming from one to another faster than 10 10 flippings per second. We thus conclude that the highly mobile Tl atoms form self-trapped nanoclusters within the attractive basins of the Si substrate at RT with several metastable phases. The mobile and multi-phased nature of Tl nanoclusters not only accounts for all the existing experimental observations available at present, but also provides an example of self-trapping of atoms in a nanometre-scale region

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

Science.gov (United States)

Anand, M. J.; Ng, G. I.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.; Syamal, B.; Zhou, X.

2015-02-01

The influence of electric field (EF) on the dynamic ON-resistance (dyn-RDS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with devices of different gate-drain spacing (Lgd) under the same OFF-state stress. Under high-EF (Lgd = 2 μm), the devices exhibited higher dyn-RDS[ON] degradation but a small ΔVth (˜120 mV). However, at low-EF (Lgd = 5 μm), smaller dyn-RDS[ON] degradation but a larger ΔVth (˜380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-RDS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔVth. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by ID-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

SELF-TRAPPING OF DISKOSEISMIC CORRUGATION MODES IN NEUTRON STAR SPACETIMES

Energy Technology Data Exchange (ETDEWEB)

Tsang, David [Center for Theory and Computation, Department of Astronomy, University of Maryland, College Park, MD 20742 (United States); Pappas, George [Department of Physics and Astronomy, The University of Mississippi, University, MS 38677 (United States)

2016-02-10

We examine the effects of higher-order multipole contributions of rotating neutron star (NS) spacetimes on the propagation of corrugation (c-)modes within a thin accretion disk. We find that the Lense–Thirring precession frequency, which determines the propagation region of the low-frequency fundamental corrugation modes, can experience a turnover allowing for c-modes to become self-trapped for sufficiently high dimensionless spin j and quadrupole rotational deformability α. If such self-trapping c-modes can be detected, e.g., through phase-resolved spectroscopy of the iron line for a high-spin low-mass accreting neutron star, this could potentially constrain the spin-induced NS quadrupole and the NS equation of state.

Self-Trapping of Diskoseismic Corrugation Modes in Neutron Star Spacetimes

Science.gov (United States)

Tsang, David; Pappas, George

2016-02-01

We examine the effects of higher-order multipole contributions of rotating neutron star (NS) spacetimes on the propagation of corrugation (c-)modes within a thin accretion disk. We find that the Lense-Thirring precession frequency, which determines the propagation region of the low-frequency fundamental corrugation modes, can experience a turnover allowing for c-modes to become self-trapped for sufficiently high dimensionless spin j and quadrupole rotational deformability α. If such self-trapping c-modes can be detected, e.g., through phase-resolved spectroscopy of the iron line for a high-spin low-mass accreting neutron star, this could potentially constrain the spin-induced NS quadrupole and the NS equation of state.

Experimental evaluation of quantum computing elements (qubits) made of electrons trapped over a liquid helium film

International Nuclear Information System (INIS)

Rousseau, E.

2006-12-01

An electron on helium presents a quantized energy spectrum. The interaction with the environment is considered sufficiently weak in order to allow the realization of a quantum bit (qubit) by using the first two energy levels. The first stage in the realization of this qubit was to trap and control a single electron. This is carried out thanks to a set of micro-fabricated electrodes defining a well of potential in which the electron is trapped. We are able with such a sample to trap and detect a variables number of electrons varying between one and around twenty. This then allowed us to study the static behaviour of a small number of electrons in a trap. They are supposed to crystallize and form structures called Wigner molecules. Such molecules have not yet been observed yet with electrons above helium. Our results bring circumstantial evidence for of Wigner crystallization. We then sought to characterize the qubit more precisely. We sought to carry out a projective reading (depending on the state of the qubit) and a measurement of the relaxation time. The results were obtained by exciting the electron with an incoherent electric field. A clean measurement of the relaxation time would require a coherent electric field. The conclusion cannot thus be final but it would seem that the relaxation time is shorter than calculated theoretically. That is perhaps due to a measurement of the relaxation between the oscillating states in the trap and not between the states of the qubit. (author)

Self-trapping and self-focusing of an elliptical laser beam in a collisionless magnetoplasma

Energy Technology Data Exchange (ETDEWEB)

Soni, V S; Nayyar, V P [Punjabi Univ., Patiala (India). Dept. of Physics

1980-03-14

The authors have studied the self-trapping and self-focusing-defocusing of an elliptically shaped laser beam in a magnetoplasma. The critical self-trapping power of the beam for the ordinary mode is twice the critical power for the extraordinary mode. On both sides of the critical power required for self-trapping, there are separate values of the critical power for the x-dimension as well as for the y-dimension of the beam. At and above the critical value for the x-dimension, the beam defocuses in both directions while at and below the critical value for the y-dimension, it self-focuses in both directions. Self-trapping is also observed in the case of the ordinary mode at a critical value of the external magnetic field for any power value.

Electron Cooling of Protons in a Nested Penning Trap

International Nuclear Information System (INIS)

Hall, D.S.; Gabrielse, G.

1996-01-01

Trapped protons cool via collisions with trapped electrons at 4 K.This first demonstration of sympathetic cooling by trapped species of opposite sign of charge utilizes a nested Penning trap. The demonstrated interaction of electrons and protons at very low relative velocities, where recombination is predicted to be most rapid, indicates that this may be a route towards the study of low temperature recombination. The production of cold antihydrogen is of particular interest, and electron cooling of highly stripped ions may also be possible. copyright 1996 The American Physical Society

Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

International Nuclear Information System (INIS)

Li Yun; Pan Lijia; Pu Lin; Shi Yi; Liu Chuan; Tsukagoshi, Kazuhito

2012-01-01

Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels. (paper)

Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

Science.gov (United States)

Li, Yun; Liu, Chuan; Pan, Lijia; Pu, Lin; Tsukagoshi, Kazuhito; Shi, Yi

2012-01-01

Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels.

Proposed LLNL electron beam ion trap

International Nuclear Information System (INIS)

Marrs, R.E.; Egan, P.O.; Proctor, I.; Levine, M.A.; Hansen, L.; Kajiyama, Y.; Wolgast, R.

1985-01-01

The interaction of energetic electrons with highly charged ions is of great importance to several research fields such as astrophysics, laser fusion and magnetic fusion. In spite of this importance there are almost no measurements of electron interaction cross sections for ions more than a few times ionized. To address this problem an electron beam ion trap (EBIT) is being developed at LLNL. The device is essentially an EBIS except that it is not intended as a source of extracted ions. Instead the (variable energy) electron beam interacting with the confined ions will be used to obtain measurements of ionization cross sections, dielectronic recombination cross sections, radiative recombination cross sections, energy levels and oscillator strengths. Charge-exchange recombinaion cross sections with neutral gasses could also be measured. The goal is to produce and study elements in many different charge states up to He-like xenon and Ne-like uranium. 5 refs., 2 figs

Properties of Trapped Electron Bunches in a Plasma Wakefield Accelerator

Energy Technology Data Exchange (ETDEWEB)

Kirby, Neil; /SLAC

2009-10-30

Plasma-based accelerators use the propagation of a drive bunch through plasma to create large electric fields. Recent plasma wakefield accelerator (PWFA) experiments, carried out at the Stanford Linear Accelerator Center (SLAC), successfully doubled the energy for some of the 42 GeV drive bunch electrons in less than a meter; this feat would have required 3 km in the SLAC linac. This dissertation covers one phenomenon associated with the PWFA, electron trapping. Recently it was shown that PWFAs, operated in the nonlinear bubble regime, can trap electrons that are released by ionization inside the plasma wake and accelerate them to high energies. These trapped electrons occupy and can degrade the accelerating portion of the plasma wake, so it is important to understand their origins and how to remove them. Here, the onset of electron trapping is connected to the drive bunch properties. Additionally, the trapped electron bunches are observed with normalized transverse emittance divided by peak current, {epsilon}{sub N,x}/I{sub t}, below the level of 0.2 {micro}m/kA. A theoretical model of the trapped electron emittance, developed here, indicates that the emittance scales inversely with the square root of the plasma density in the non-linear 'bubble' regime of the PWFA. This model and simulations indicate that the observed values of {epsilon}{sub N,x}/I{sub t} result from multi-GeV trapped electron bunches with emittances of a few {micro}m and multi-kA peak currents. These properties make the trapped electrons a possible particle source for next generation light sources. This dissertation is organized as follows. The first chapter is an overview of the PWFA, which includes a review of the accelerating and focusing fields and a survey of the remaining issues for a plasma-based particle collider. Then, the second chapter examines the physics of electron trapping in the PWFA. The third chapter uses theory and simulations to analyze the properties of the trapped

Electronic properties of hafnium oxide: A contribution from defects and traps

Energy Technology Data Exchange (ETDEWEB)

Gritsenko, Vladimir A., E-mail: grits@isp.nsc.ru; Perevalov, Timofey V.; Islamov, Damir R., E-mail: damir@isp.nsc.ru

2016-02-15

In the present article, we give a review of modern data and latest achievements pertaining to the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a key dielectric for use in many advanced silicon devices. Oxygen vacancies in hafnium oxide largely determine the electronic properties of the material. We show that the electronic transitions between the states due to oxygen vacancies largely determine the optical absorption and luminescent properties of hafnium oxide. We discuss the role of oxygen vacancies as traps that facilitate charge transport in hafnium oxide films. Also, we demonstrate the fact that the electrical conductivity in hafnium oxide is controlled by the phonon-assisted tunnelling of charge carriers between traps that were identified as oxygen vacancies.

Trapped electron losses by interactions with coherent VLF waves

International Nuclear Information System (INIS)

Walt, M.; Inan, U.S.; Voss, H.D.

1996-01-01

VLF whistler waves from lightning enter the magnetosphere and cause the precipitation of energetic trapped electrons by pitch angle scattering. These events, known as Lightning-induced Electron Precipitation (LEP) have been detected by satellite and rocket instruments and by perturbations of VLF waves traveling in the earth-ionosphere waveguide. Detailed comparison of precipitating electron energy spectra and time dependence are in general agreement with calculations of trapped electron interactions with ducted whistler waves. In particular the temporal structure of the precipitation and the dynamic energy spectra of the electrons confirm this interpretation of the phenomena. There are discrepancies between observed and measured electron flux intensities and pitch angle distributions, but these quantities are sensitive to unknown wave intensities and trapped particle fluxes near the loss cone angle. The overall effect of lightning generated VLF waves on the lifetime of trapped electrons is still uncertain. The flux of electrons deflected into the bounce loss cone by a discrete whistler wave has been measured in a few cases. However, the area of the precipitation region is not known, and thus the total number of electrons lost in an LEP event can only be estimated. While the LEP events are dramatic, more important effects on trapped electrons may arise from the small but numerous deflections which increase the pitch angle diffusion rate of the electron population. copyright 1996 American Institute of Physics

Trapped electron losses by interactions with coherent VLF waves

Science.gov (United States)

Walt, M.; Inan, U. S.; Voss, H. D.

1996-07-01

VLF whistler waves from lightning enter the magnetosphere and cause the precipitation of energetic trapped electrons by pitch angle scattering. These events, known as Lightning-induced Electron Precipitation (LEP) have been detected by satellite and rocket instruments and by perturbations of VLF waves traveling in the earth-ionosphere waveguide. Detailed comparison of precipitating electron energy spectra and time dependence are in general agreement with calculations of trapped electron interactions with ducted whistler waves. In particular the temporal structure of the precipitation and the dynamic energy spectra of the electrons confirm this interpretation of the phenomena. There are discrepancies between observed and measured electron flux intensities and pitch angle distributions, but these quantities are sensitive to unknown wave intensities and trapped particle fluxes near the loss cone angle. The overall effect of lightning generated VLF waves on the lifetime of trapped electrons is still uncertain. The flux of electrons deflected into the bounce loss cone by a discrete whistler wave has been measured in a few cases. However, the area of the precipitation region is not known, and thus the total number of electrons lost in an LEP event can only be estimated. While the LEP events are dramatic, more important effects on trapped electrons may arise from the small but numerous deflections which increase the pitch angle diffusion rate of the electron population.

Trapped electrons in irradiated single crystals of polyhydroxy compounds

International Nuclear Information System (INIS)

Box, H.C.; Budzinski, E.E.; Freund, H.G.; Potter, W.R.

1979-01-01

The intermolecular trapping of electrons has been observed in single crystals of dulcitol and L(+) arabinose x-irradiated at 4.2 0 K. Attribution of a major component of the ESR absorption to trapped electrons is based upon the character of the hyperfine pattern, which arises from multiple anisotropic hyperfine interactions with exchangeable protons, and on the g value of the absorption, which is always less than the free spin value. The removal of the trapped electron absorption upon irradiation with visible light has also been demonstrated. In these experiments all of the electrons are trapped in identical sites. This circumstance provides some important advantages in the study of the factors affecting the stabilization of charge in an environment of polarizable molecules

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

International Nuclear Information System (INIS)

Anand, M. J.; Ng, G. I.; Syamal, B.; Zhou, X.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.

2015-01-01

The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON] ) and threshold-voltage shift (ΔV th ) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I DS -V DS ) and drain current (I D ) transients. Different EF was realized with devices of different gate-drain spacing (L gd ) under the same OFF-state stress. Under high-EF (L gd  = 2 μm), the devices exhibited higher dyn-R DS[ON] degradation but a small ΔV th (∼120 mV). However, at low-EF (L gd  = 5 μm), smaller dyn-R DS[ON] degradation but a larger ΔV th (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R DS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV th . A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I D -transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations

Identification of electron and hole traps in KH2PO4 crystals

International Nuclear Information System (INIS)

Garces, N. Y.; Stevens, K. T.; Halliburton, L. E.; Demos, S. G.; Radousky, H. B.; Zaitseva, N. P.

2001-01-01

Electron paramagnetic resonance (EPR) has been used to characterize a hole trap and several electron traps in single crystals of potassium dihydrogen phosphate (KH 2 PO 4 or KDP). The paramagnetic charge states of these centers are produced by ionizing radiation (e.g., x rays or a 266 nm beam from a pulsed Nd:YAG laser) and are stable for days and even weeks at room temperature. One center consists of a hole trapped on an oxygen ion adjacent to a silicon impurity located on a phosphorus site. This defect has a small, but easily observed, hyperfine interaction with the adjacent substitutional proton. The other centers are formed when an electron is trapped at an oxygen vacancy. These latter defects are best described as (PO 3 ) 2- molecular ions, where the primary phosphorus nucleus is responsible for a large hyperfine splitting (500--800 G in magnitude). Five EPR spectra representing variations of these oxygen vacancy centers are observed, with the differences being attributed to the relative position of a nearby cation vacancy, either a missing proton or potassium. An angular study of the EPR spectra, conducted at room temperature, provided principal values and principal directions for the g matrices and hyperfine matrices for the hole center and two of the electron centers

Trapping of Electron Cloud LLC/Cesrta Quadrupole and Sextupole Magnets

International Nuclear Information System (INIS)

Wang, L.

2011-01-01

The Cornell Electron Storage Ring (CESR) has been reconfigured as an ultra low emittance damping ring for use as a test accelerator (CesrTA) for International Linear Collider (ILC) damping ring R and D (1). One of the primary goals of the CesrTA program is to investigate the interaction of the electron cloud with low emittance positron beam to explore methods to suppress the electron cloud, develop suitable advanced instrumentation required for these experimental studies and benchmark predictions by simulation codes. This paper reports the simulation of the electron-cloud formation in CESRTA and ILC quadrupole and sextupole magnets using the 3D code CLOUDLAND. We found that electrons can be trapped with a long lifetime in a quadrupole and sextupole magnet due to the mirror field trapping mechanism. We study the effects of magnet strength, bunch current, ante-chamber effect, bunch spacing effect and secondary emission yield (SEY) in great detail. The development of an electron cloud in magnets is the main concern where a weak solenoid field is not effective. Quadrupole and sextupole magnets have mirror field configurations which may trap electrons by the mirror field trapping mechanism (2). Fig.1 shows the orbit of a trapped electron in a quadrupole magnet. The electron makes gyration motion (called transverse motion) and also moves along the field line (called longitudinal motion). At the mirror point (middle of the field line), there is a maximum longitudinal energy and minimum transverse energy. When the electron moves away from the mirror point, its longitudinal energy reduces and the transverse energy increases as the magnetic field increases. If the magnetic field is strong enough, the longitudinal energy becomes zero at one point and then the electron is turned back by the strong field. Note that the electrons are trapped in the region near the middle of the field lines. Although all quadrupole and sextupole magnets can trap electrons in principle, the

Hydration of excess electrons trapped in charge pockets on molecular surfaces

Science.gov (United States)

Jalbout, Abraham F.; Del Castillo, R.; Adamowicz, Ludwik

2007-01-01

In this work we strive to design a novel electron trap located on a molecular surface. The process of electron trapping involves hydration of the trapped electron. Previous calculations on surface electron trapping revealed that clusters of OH groups can form stable hydrogen-bonded networks on one side of a hydrocarbon surface (i.e. cyclohexane sheets), while the hydrogen atoms on the opposite side of the surface form pockets of positive charge that can attract extra negative charge. The excess electron density on such surfaces can be further stabilized by interactions with water molecules. Our calculations show that these anionic systems are stable with respect to vertical electron detachment (VDE).

Slow electron acoustic double layer (SEADL) structures in bi-ion plasma with trapped electrons

Science.gov (United States)

Shan, Shaukat Ali; Imtiaz, Nadia

2018-05-01

The properties of ion acoustic double layer (IADL) structures in bi-ion plasma with electron trapping are investigated by using the quasi-potential analysis. The κ-distributed trapped electrons number density expression is truncated to some finite order of the electrostatic potential. By utilizing the reductive perturbation method, a modified Schamel equation which describes the evolution of the slow electron acoustic double layer (SEADL) with the modified speed due to the presence of bi-ion species is investigated. The Sagdeev-like potential has been derived which accounts for the effect of the electron trapping and superthermality in a bi-ion plasma. It is found that the superthermality index, the trapping efficiency of electrons, and ion to electron temperature ratio are the inhibiting parameters for the amplitude of the slow electron acoustic double layers (SEADLs). However, the enhanced population of the cold ions is found to play a supportive role for the low frequency DLs in bi-ion plasmas. The illustrations have been presented with the help of the bi-ion plasma parameters in the Earth's ionosphere F-region.

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

Energy Technology Data Exchange (ETDEWEB)

Anand, M. J., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Ng, G. I., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Syamal, B.; Zhou, X. [School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C. [Temasek Laboratories@NTU, Nanyang Technological University, 50 Nanyang Drive, Research Techno Plaza, Singapore 637553 (Singapore)

2015-02-23

The influence of electric field (EF) on the dynamic ON-resistance (dyn-R{sub DS[ON]}) and threshold-voltage shift (ΔV{sub th}) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I{sub DS}-V{sub DS}) and drain current (I{sub D}) transients. Different EF was realized with devices of different gate-drain spacing (L{sub gd}) under the same OFF-state stress. Under high-EF (L{sub gd} = 2 μm), the devices exhibited higher dyn-R{sub DS[ON]} degradation but a small ΔV{sub th} (∼120 mV). However, at low-EF (L{sub gd} = 5 μm), smaller dyn-R{sub DS[ON]} degradation but a larger ΔV{sub th} (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R{sub DS[ON]} degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV{sub th}. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I{sub D}-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

Electron self-trapping at quantum and classical critical points

NARCIS (Netherlands)

Auslender, M.I.; Katsnelson, M.I.

2006-01-01

Using Feynman path integral technique estimations of the ground state energy have been found for a conduction electron interacting with order parameter fluctuations near quantum critical points. In some cases only singular perturbation theory in the coupling constant emerges for the electron ground

Excitation transfer and trapping kinetics in plant photosystem I probed by two-dimensional electronic spectroscopy.

Science.gov (United States)

Akhtar, Parveen; Zhang, Cheng; Liu, Zhengtang; Tan, Howe-Siang; Lambrev, Petar H

2018-03-01

Photosystem I is a robust and highly efficient biological solar engine. Its capacity to utilize virtually every absorbed photon's energy in a photochemical reaction generates great interest in the kinetics and mechanisms of excitation energy transfer and charge separation. In this work, we have employed room-temperature coherent two-dimensional electronic spectroscopy and time-resolved fluorescence spectroscopy to follow exciton equilibration and excitation trapping in intact Photosystem I complexes as well as core complexes isolated from Pisum sativum. We performed two-dimensional electronic spectroscopy measurements with low excitation pulse energies to record excited-state kinetics free from singlet-singlet annihilation. Global lifetime analysis resolved energy transfer and trapping lifetimes closely matches the time-correlated single-photon counting data. Exciton energy equilibration in the core antenna occurred on a timescale of 0.5 ps. We further observed spectral equilibration component in the core complex with a 3-4 ps lifetime between the bulk Chl states and a state absorbing at 700 nm. Trapping in the core complex occurred with a 20 ps lifetime, which in the supercomplex split into two lifetimes, 16 ps and 67-75 ps. The experimental data could be modelled with two alternative models resulting in equally good fits-a transfer-to-trap-limited model and a trap-limited model. However, the former model is only possible if the 3-4 ps component is ascribed to equilibration with a "red" core antenna pool absorbing at 700 nm. Conversely, if these low-energy states are identified with the P 700 reaction centre, the transfer-to-trap-model is ruled out in favour of a trap-limited model.

Reactivity of Trapped and Accumulated Electrons in Titanium Dioxide Photocatalysis

Directory of Open Access Journals (Sweden)

Shigeru Kohtani

2017-10-01

Full Text Available Electrons, photogenerated in conduction bands (CB and trapped in electron trap defects (Tids in titanium dioxide (TiO2, play crucial roles in characteristic reductive reactions. This review summarizes the recent progress in the research on electron transfer in photo-excited TiO2. Particularly, the reactivity of electrons accumulated in CB and trapped at Tids on TiO2 is highlighted in the reduction of molecular oxygen and molecular nitrogen, and the hydrogenation and dehalogenation of organic substrates. Finally, the prospects for developing highly active TiO2 photocatalysts are discussed.

Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer

Directory of Open Access Journals (Sweden)

Keanchuan Lee

2012-06-01

Full Text Available A silver nanoparticles self-assembled monolayer (SAM was incorporated in pentacene field-effect transistor and its effects on the carrier injection and transport were investigated using the current-voltage (I − V and impedance spectroscopy (IS measurements. The I − V results showed that there was a significant negative shift of the threshold voltage, indicating the hole trapping inside the devices with about two orders higher in the contact resistance and an order lower in the effective mobility when a SAM was introduced. The IS measurements with the simulation using a Maxwell-Wagner equivalent circuit model revealed the existence of multiple trapping states for the devices with NPs, while the devices without NPs exhibited only a single trap state.

Electron cooling of highly charged ions in penning traps; Elektronenkuehlung hochgeladener Ionen in Penningfallen

Energy Technology Data Exchange (ETDEWEB)

Moellers, B.

2007-02-08

estimate recombination rates and survival probabilities of a charge state. These are calculated and compared for different ion and electron densities. In a further step the external trap potential and the shape of the electron plasma is included. A full analytic approximation (except for the calculation of the energy loss) of the ion movement in the trap is developed. With this model the time dependence of ion distributions is investigated. (orig.)

Nonlinear ion-mixing-mode particle transport in the dissipative trapped electron regime

International Nuclear Information System (INIS)

Ware, A.S.; Terry, P.W.

1993-09-01

The nonlinear particle transport arising from the convection of nonadiabatic electron density by ion temperature gradient driven turbulence is examined for trapped electron collisionality regimes. The renormalized dissipative nonadiabatic trapped electron phase space density response is derived and used to calculate the nonlinear particle flux along with an ansatz for the turbulently broadened frequency spectrum. In the lower temperature end of this regime, trapped electrons are collisional and all components of the quasilinear particle flux are outward (i.e., in the direction of the gradients). Nonlinear effects can alter the phase between the nonadiabatic trapped electron phase space density and the electrostatic potential, producing inward components in the particle flux. Specifically, both turbulent shifting of the peak of the frequency spectrum and nonlinear source terms in the trapped electron response can give rise to inward components. However, in the dissipative regime these terms are small and the trapped electron response remains dominantly laminar. When the trapped electrons are collisionless, there is a temperature threshold above which the electron temperature gradient driven component of the quasilinear particle flux changes sign and becomes inward. For finite amplitude turbulence, however, turbulent broadening of both the electron collisional resonance and the frequency spectrum removes tills threshold., and the temperature gradient driven component remains outward

Experimental efforts at NIST towards one-electron ions in circular Rydberg states

International Nuclear Information System (INIS)

Tan, Joseph N; Guise, Nicholas D; Brewer, Samuel M

2011-01-01

Experimental effort is underway at NIST to enable tests of theory with one-electron ions synthesized in circular Rydberg states from captured bare nuclei. Problematic effects that limit the accuracy of predicted energy levels for low-lying states are vanishingly small for high-angular-momentum (high-L) states; in particular, the nuclear size correction for high-L states is completely negligible for any foreseeable improvement of measurement precision. As an initial step towards realizing such states, highly charged ions are extracted from the NIST electron beam ion trap (EBIT) and steered through the electrodes of a Penning trap. The goal is to capture bare nuclei in the Penning trap for experiments to make one-electron atoms in circular Rydberg states with dipole (E1) transitions in the optical domain accessible to a frequency comb.

Atomic physics measurements in an electron Beam Ion Trap

International Nuclear Information System (INIS)

Marrs, R.E.; Beiersdorfer, P.; Bennett, C.

1989-01-01

An electron Beam Ion Trap at Lawrence Livermore National Laboratory is being used to produce and trap very-highly-charged ions (q ≤ 70/+/) for x-ray spectroscopy measurements. Recent measurements of transition energies and electron excitation cross sections for x-ray line emission are summarized. 13 refs., 10 figs

The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

1999-01-01

Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models. Here we separate the effects of electron-hole annihilation and electron trapping on the neutralization of radiation-induced charge during switched-bias irradiation for hard and soft oxides, via combined thermally stimulated current (TSC) and capacitance-voltage measurements. We also show that present total-dose models cannot account for the thermal stability of deeply trapped electrons near the Si/SiO 2 interface, or the inability of electrons in deep or shallow traps to contribute to TSC at positive bias following (1) room-temperature, (2) high-temperature, or (3) switched-bias irradiation. These results require revisions of modeling parameters and boundary conditions for hole and electron transport in SiO 2 . The nature of deep and shallow electron traps in the near-interfacial SiO 2 is discussed

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

International Nuclear Information System (INIS)

Cho, Joung-min; Akiyama, Yuto; Kakinuma, Tomoyuki; Mori, Takehiko

2013-01-01

We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V G above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge

Trapping and dark current in plasma-based accelerators

International Nuclear Information System (INIS)

Schroder, C.B.; Esarey, E.; Shadwick, B.A.; Leemans, W.P.

2004-01-01

The trapping of thermal electrons in a nonlinear plasma wave of arbitrary phase velocity is investigated. The threshold plasma wave amplitude for trapping plasma electrons is calculated, thereby determining the fraction trapped and the expected dark current in a plasma-based accelerator. It is shown that the presence of a laser field (e.g., trapping in the self-modulated regime of the laser wakefield accelerator) increases the trapping threshold. Implications for experimental and numerical laser-plasma studies are discussed

Coherent states approach to Penning trap

International Nuclear Information System (INIS)

Fernandez, David J; Velazquez, Mercedes

2009-01-01

By using a matrix technique, which allows us to identify directly the ladder operators, the Penning trap coherent states are derived as eigenstates of the appropriate annihilation operators. These states are compared with those obtained through the displacement operator. The associated wavefunctions and mean values for some relevant operators in these states are also evaluated. It turns out that the Penning trap coherent states minimize the Heisenberg uncertainty relation

Feedback-controlled diffusion: From self-trapping to true self-avoiding walks

International Nuclear Information System (INIS)

Schulz, B.M.; Trimper, S.; Schulz, M.

2005-01-01

We study the asymptotic behavior of a Brownian particle under the influence of a dynamical feedback by numerical simulations and analytical considerations. The feedback is controlled by a memory coupling of strength λ. Whereas a negative memory strength yields a true self avoiding walk, a positive memory leads to a self-trapping of the particle. The localization is manifested by a constant mean square displacement in the long time limit which appears after an initial diffusive regime. The probability distribution function of the trapping distance shows an exponential decay. The numerical simulations are compared with an analytical modeling

Spontaneous symmetry breaking, self-trapping, and Josephson oscillations

CERN Document Server

2013-01-01

This volume collects a a number of contributions on spontaneous symmetry breaking. Current studies in this general field are going ahead at a full speed. The book present review chapters which give an overview on the major break throughs of recent years. It covers a number of different physical settings which are introduced when a nonlinearity is added to the underlying symmetric problems and its strength exceeds a certain critical value. The corresponding loss of symmetry, called spontaneous symmetry breaking, alias self-trapping into asymmetric states is extensively discussed in this book.

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

Science.gov (United States)

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-01

The threshold voltage instabilities and huge hysteresis of MoS2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Tin Oxide Nanowires: The Influence of Trap States on Ultrafast Carrier Relaxation

Directory of Open Access Journals (Sweden)

Zervos Matthew

2009-01-01

Full Text Available Abstract We have studied the optical properties and carrier dynamics in SnO2nanowires (NWs with an average radius of 50 nm that were grown via the vapor–liquid solid method. Transient differential absorption measurements have been employed to investigate the ultrafast relaxation dynamics of photogenerated carriers in the SnO2NWs. Steady state transmission measurements revealed that the band gap of these NWs is 3.77 eV and contains two broad absorption bands. The first is located below the band edge (shallow traps and the second near the center of the band gap (deep traps. Both of these absorption bands seem to play a crucial role in the relaxation of the photogenerated carriers. Time resolved measurements suggest that the photogenerated carriers take a few picoseconds to move into the shallow trap states whereas they take ~70 ps to move from the shallow to the deep trap states. Furthermore the recombination process of electrons in these trap states with holes in the valence band takes ~2 ns. Auger recombination appears to be important at the highest fluence used in this study (500 μJ/cm2; however, it has negligible effect for fluences below 50 μJ/cm2. The Auger coefficient for the SnO2NWs was estimated to be 7.5 ± 2.5 × 10−31 cm6/s.

Spectral measurements of few-electron uranium ions produced and trapped in a high-energy electron beam ion trap

International Nuclear Information System (INIS)

Beiersdorfer, P.

1994-01-01

Measurements of 2s l/2 -2p 3/2 electric dipole and 2p 1/2 -2p 3/2 magnetic dipole and electric quadrupole transitions in U 82+ through U 89+ have been made with a high-resolution crystal spectrometer that recorded the line radiation from stationary ions produced and trapped in a high-energy electron beam ion trap. From the measurements we infer -39.21 ± 0.23 eV for the QED contribution to the 2s 1/2 -2p 3/2 transition energy of lithiumlike U 89+ . A comparison between our measurements and various computations illustrates the need for continued improvements in theoretical approaches for calculating the atomic structure of ions with two or more electrons in the L shell

Ion trapping within the dust grain plasma sheath

International Nuclear Information System (INIS)

Jovanovic, D.; Shukla, P.K.

2002-01-01

One of the most important and still unresolved problems in the physics of dusty plasmas is the determination of the dust charge. The grains are not directly accessible to measurements and it is necessary to have a reliable theoretical model of the electron and ion dynamics inside the Debye sphere for the interpretation of the relevant experimental data, which include also the effects of the surrounding electron and ion clouds. Recent computer simulations [6] and laboratory experiments [9] indicate that the plasma sheath is dominated by trapped ions, orbiting the grain on closed trajectories at distances smaller than the Debye radius, that cannot be accounted for by the classical theories. We present the first analytical, fully self-consistent, calculations of the electrostatic shielding of a charged dust grain in a collisional plasma. In the regime when the mean free path for the ion-dust collisions is larger than that for the ion-neutral collisions, we solve the kinetic equation for the ions, coupled with Boltzmann distributed electrons and Poisson's equation. The ion velocity distribution function, in the form of a spherically symmetric ion hole, is found to be anisotropic in the presence of charge-exchange collisions. The number of trapped ions and their spatial distribution are determined from the interplay between the collective plasma interaction and the collisional trapping/de-trapping. The stationary state results from the self-tuning of the trapped ion density by the feedback based on the nonlocality of the collisional integral, and on the ion mixing in the radial direction along elongated orbits. Our results confirm the existence of a strong Debye shielding of the dust charge, allowing also the over-population of the trapped ion distribution (ion hump)

Sawtooth activity of the ion cloud in an electron-beam ion trap

International Nuclear Information System (INIS)

Radtke, R.; Biedermann, C.

2003-01-01

The dynamics of an ensemble of highly charged Ar and Ba ions in an electron-beam ion trap (EBIT) was studied by recording time-resolved x-ray spectra emitted from trapped ions. Sawtoothlike signatures manifest in the spectra for a variety of EBIT operating conditions indicating a sudden collapse of the ion inventory in the trap. The collapse occurs on a time scale of approximately 100 ms and the evolution of the sawteeth is very sensitive to parameters such as electron-beam current and axial trap depth. Analysis of the measurements is based on a time-dependent calculation of the trapping process showing that sawtooth activity is caused by the feedback between the low-Z argon and high-Z barium ions. This unexpected behavior demonstrates the importance of nonlinear effects in electron-beam traps containing more than a single ion species

Electron trap annealing in neutron transmutation doped silicon

DEFF Research Database (Denmark)

Guldberg, J.

1977-01-01

Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

Negative pion trapping by metastable state in liquid helium

International Nuclear Information System (INIS)

Nakamura, S.N.; Iwasaki, M.; Outa, H.

1991-11-01

We found long-lived metastable states of stopped π - 's in liquid helium by measuring time spectra of two different delayed products: 1) protons emitted after π - absorption by 4 He nuclei and 2) 70-MeV electrons originating from free π - → e - (ν e )-bar decay. The lifetime and fraction of delayed π - absorption obtained by emitted protons are 7.26±0.12 nsec and 1.66±0.05%, respectively. The free-decay fraction was calculated to be 0.64±0.03% from this result, which is consistent with the observed free-decay fraction of π e2 decay. These results imply that 2.30±0.07% of stopped π - are trapped in metastable states which have an overall lifetime of 10.1±0.2 nsec. The same experiment and analysis were performed for stopped π - in liquid neon. No evidence for trapping was found in liquid neon. (author)

Resonant Self-Trapping and Absorption of Intense Bessel Beams

International Nuclear Information System (INIS)

Fan, J.; Parra, E.; Milchberg, H. M.

2000-01-01

We report the observation of resonant self-trapping and enhanced laser-plasma heating resulting from propagation of high intensity Bessel beams in neutral gas. The enhancement in absorption and plasma heating is directly correlated to the spatial trapping of laser radiation. (c) 2000 The American Physical Society

Electron-trapping probability in natural dosemeters as a function of irradiation temperature

DEFF Research Database (Denmark)

Wallinga, J.; Murray, A.S.; Wintle, A.G.

2002-01-01

The electron-trapping probability in OSL traps as a function of irradiation temperature is investigated for sedimentary quartz and feldspar. A dependency was found for both minerals; this phenomenon could give rise to errors in dose estimation when the irradiation temperature used in laboratory...... procedures is different from that in the natural environment. No evidence was found for the existence of shallow trap saturation effects that Could give rise to a dose-rate dependency of electron trapping....

Experimental evaluation of quantum computing elements (qubits) made of electrons trapped over a liquid helium film; Evaluation experimentale d'elements de calcul quantique (qubit) formes d'electrons pieges sur l'helium liquide

Energy Technology Data Exchange (ETDEWEB)

Rousseau, E

2006-12-15

An electron on helium presents a quantized energy spectrum. The interaction with the environment is considered sufficiently weak in order to allow the realization of a quantum bit (qubit) by using the first two energy levels. The first stage in the realization of this qubit was to trap and control a single electron. This is carried out thanks to a set of micro-fabricated electrodes defining a well of potential in which the electron is trapped. We are able with such a sample to trap and detect a variables number of electrons varying between one and around twenty. This then allowed us to study the static behaviour of a small number of electrons in a trap. They are supposed to crystallize and form structures called Wigner molecules. Such molecules have not yet been observed yet with electrons above helium. Our results bring circumstantial evidence for of Wigner crystallization. We then sought to characterize the qubit more precisely. We sought to carry out a projective reading (depending on the state of the qubit) and a measurement of the relaxation time. The results were obtained by exciting the electron with an incoherent electric field. A clean measurement of the relaxation time would require a coherent electric field. The conclusion cannot thus be final but it would seem that the relaxation time is shorter than calculated theoretically. That is perhaps due to a measurement of the relaxation between the oscillating states in the trap and not between the states of the qubit. (author)

Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids

NARCIS (Netherlands)

Boehme, Simon C.; Mikel Azpiroz, Jon; Aulin, Yaroslav V.; Grozema, Ferdinand C.; Vanmaekelbergh, Daniel; Siebbeles, Laurens D. A.; Infante, Ivan; Houtepen, Arjan J.

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact

Density of trap states and Auger-mediated electron trapping in CdTe quantum-dot solids

NARCIS (Netherlands)

Boehme, Simon C.; Azpiroz, Jon Mikel; Aulin, Yaroslav V.; Grozema, Ferdinand C.; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J.

2015-01-01

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact

Trapped electronic states in YAG crystal excited by femtosecond radiation

Energy Technology Data Exchange (ETDEWEB)

Zavedeev, E.V.; Kononenko, V.V.; Konov, V.I. [General Physics Institute of RAS, Moscow (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

2017-07-15

The excitation of an electronic subsystem of an yttrium aluminum garnet by 800 nm femtosecond radiation was studied theoretically and experimentally. The spatio-temporal dynamics of the refractive index (n) inside the beam waist was explored by means of the pump-probe interferometric technique with a submicron resolution. The observed increase in n indicated the formation of bound electronic states relaxed for ∝ 150 ps. We showed that the experimental data agreed with the computational simulation based on the numerical solution of the nonlinear Schroedinger equation only if these transient states were considered to arise from a direct light-induced process but not from the decay of radiatively generated free-electron-hole pairs. (orig.)

Trapped electron decay by the thermally-assisted tunnelling to electron acceptors in glassy matrices. A computer simulation study

International Nuclear Information System (INIS)

Feret, B.; Bartczak, W.M.; Kroh, J.

1991-01-01

The Redi-Hopefield quantum mechanical model of the thermally-assisted electron transfer has been applied to simulate the decay of trapped electrons by tunnelling to electron acceptor molecules added to the glassy matrix. It was assumed that the electron energy levels in donors and acceptors are statistically distributed and the electron excess energy after transfer is dissipated in the medium by the electron-phonon coupling. The electron decay curves were obtained by the method of computer simulation. It was found that for a given medium there exists a certain preferred value of the electronic excess energy which can be effectively converted into the matrix vibrations. If the mismatch of the electron states on the donor and acceptor coincides with the ''resonance'' energy the overall kinetics of electron transfer is accelerated. (author)

Origin and behavior of main electron traps in Si-implanted GaAs

International Nuclear Information System (INIS)

Fang, Z.Q.; Yamamoto, H.; Look, D.C.

1990-01-01

The electron traps in Si-implanted active layers (n ∼ 10 17 cm -3 ) have been studied by capacitance and conductance DLTS techniques in conjunction with different anneal conditions, which include rapid thermal anneals at different temperatures and furnace anneals with Si 3 N 4 cap or capless in an AsH 3 atmosphere. As compared to the electron traps in as-grown bulk n-GaAs (n ∼ 4 x 10 16 cm -3 ), nearly the same electron traps, i.e. EL2, EL3, EL4, EL5, EL6, and EL9 can be observed in the Si-implanted layers. Through a comparison with the annealing behavior of the main electron traps in bulk n-GaAs, the processing associated origins of some of the traps (EL2, EL3, EL4, EL5 and EL9) observed in Si-implanted GaAs layers have been determined. For some Si-implanted capped with Si 3 N 4 and furnace annealed, traps EL3 and EL4 dominate the trap EL2. In such layers it is found that emission due to EL3 is reduced while emission from EL12 is augmented by increasing the filling pulse width from 10 μs to 5 x 10 3 μs. In this paper phenomenon is explained in terms of a defect reaction enhanced by electron capture, showing a metastability or bistability

On the self-trapping of an electromagnetic wave in magnetized plasma

International Nuclear Information System (INIS)

El-Ashry, M.Y.; Berezhiani, V.I.; Pichkhadze, Sh.D.

1987-06-01

The possibility of relativistic self-trapping of an electromagnetic wave in magnetized plasma is studied. It is shown that in the case of propagation of fast wave packet of electromagnetic wave in plasma, self-trapping is possible due to the effect of relativistic non-linearity, which is effective even for small amplitudes of the pumping wave. (author). 7 refs

Electron Fermi acceleration in collapsing magnetic traps: Computational and analytical models

International Nuclear Information System (INIS)

Gisler, G.; Lemons, D.

1990-01-01

The authors consider the heating and acceleration of electrons trapped on magnetic field lines between approaching magnetic mirrors. Such a collapsing magnetic trap and consequent electron energization can occur whenever a curved (or straight) flux tube drifts into a relatively straight (or curved) perpendicular shock. The relativistic, three-dimensional, collisionless test particle simulations show that an initial thermal electron distribution is bulk heated while a few individual electrons are accelerated to many times their original energy before they escape the trap. Upstream field-aligned beams and downstream pancake distributions perpendicular to the field are predicted. In the appropriate limit the simulation results agree well with a nonrelativistic analytic model of the distribution of escaping electrons which is based on the first adiabatic invariant and energy conservation between collisions with the mirrors. Space science and astrophysical applications are discussed

Secondary electron emission and self-consistent charge transport in semi-insulating samples

Energy Technology Data Exchange (ETDEWEB)

Fitting, H.-J. [Institute of Physics, University of Rostock, Universitaetsplatz 3, D-18051 Rostock (Germany); Touzin, M. [Unite Materiaux et Transformations, UMR CNRS 8207, Universite de Lille 1, F-59655 Villeneuve d' Ascq (France)

2011-08-15

Electron beam induced self-consistent charge transport and secondary electron emission (SEE) in insulators are described by means of an electron-hole flight-drift model (FDM) now extended by a certain intrinsic conductivity (c) and are implemented by an iterative computer simulation. Ballistic secondary electrons (SE) and holes, their attenuation to drifting charge carriers, and their recombination, trapping, and field- and temperature-dependent detrapping are included. As a main result the time dependent ''true'' secondary electron emission rate {delta}(t) released from the target material and based on ballistic electrons and the spatial distributions of currents j(x,t), charges {rho}(x,t), field F(x,t), and potential V(x,t) are obtained where V{sub 0} = V(0,t) presents the surface potential. The intrinsic electronic conductivity limits the charging process and leads to a conduction sample current to the support. In that case the steady-state total SE yield will be fixed below the unit: i.e., {sigma} {eta} + {delta} < 1.

ELECTRON TRAPPING IN WIGGLER AND QUADRUPOLE MAGNETS OF CESRTA

International Nuclear Information System (INIS)

Wang, Lanfa

2010-01-01

The Cornell Electron Storage Ring (CESR) has been reconfigured as an ultra low emittance damping ring for use as a test accelerator (CesrTA) for International Linear Collider (ILC) damping ring R and D (1). One of the primary goals of the CesrTA program is to investigate the interaction of the electron cloud with low emittance positron beam to explore methods to suppress the electron cloud, develop suitable advanced instrumentation required for these experimental studies and benchmark predictions by simulation codes. This paper reports the simulation of the electron-cloud formation in the wiggler and quadrupole magnets using the 3D code CLOUDLAND. We found that electrons can be trapped with long lifetime in a quadrupole magnet due to the mirror field trapping mechanism and photoelectrons produced in the wiggler zero field zone have long lifetime due to their complicated trajectory.

Dynamic Trap Formation and Elimination in Colloidal Quantum Dots

KAUST Repository

Voznyy, O.; Thon, S. M.; Ip, A. H.; Sargent, E. H.

2013-01-01

Using first-principles simulations on PbS and CdSe colloidal quantum dots, we find that surface defects form in response to electronic doping and charging of the nanoparticles. We show that electronic trap states in nanocrystals are dynamic entities, in contrast with the conventional picture wherein traps are viewed as stable electronic states that can be filled or emptied, but not created or destroyed. These traps arise from the formation or breaking of atomic dimers at the nanoparticle surface. The dimers' energy levels can reside within the bandgap, in which case a trap is formed. Fortunately, we are also able to identify a number of shallow-electron-affinity cations that stabilize the surface, working to counter dynamic trap formation and allowing for trap-free doping. © 2013 American Chemical Society.

Dynamic Trap Formation and Elimination in Colloidal Quantum Dots

KAUST Repository

Voznyy, O.

2013-03-21

Using first-principles simulations on PbS and CdSe colloidal quantum dots, we find that surface defects form in response to electronic doping and charging of the nanoparticles. We show that electronic trap states in nanocrystals are dynamic entities, in contrast with the conventional picture wherein traps are viewed as stable electronic states that can be filled or emptied, but not created or destroyed. These traps arise from the formation or breaking of atomic dimers at the nanoparticle surface. The dimers\\' energy levels can reside within the bandgap, in which case a trap is formed. Fortunately, we are also able to identify a number of shallow-electron-affinity cations that stabilize the surface, working to counter dynamic trap formation and allowing for trap-free doping. © 2013 American Chemical Society.

Josephson oscillation and self-trapping in momentum space

Science.gov (United States)

Zheng, Yi; Feng, Shiping; Yang, Shi-Jie

2018-04-01

The Creutz ladder model is studied in the presence of unconventional flux induced by complex tunneling rates along and between the two legs. In the vortex phase, the double-minima band structure is regarded as a double well. By introducing a tunable coupling between the two momentum minima, we demonstrate a phenomenon of Josephson oscillations in momentum space. The condensate density locked in one of the momentum valleys is referred to as macroscopic quantum self-trapping. The on-site interaction of the lattice provides an effective analogy to the double-well model within the two-mode approximation which allows for a quantitative understanding of the Josephson effect and the self-trapping in momentum space.

Observation of Nonlinear Self-Trapping of Broad Beams in Defocusing Waveguide Arrays

International Nuclear Information System (INIS)

Bennet, Francis H.; Haslinger, Franz; Neshev, Dragomir N.; Kivshar, Yuri S.; Alexander, Tristram J.; Mitchell, Arnan

2011-01-01

We demonstrate experimentally the localization of broad optical beams in periodic arrays of optical waveguides with defocusing nonlinearity. This observation in optics is linked to nonlinear self-trapping of Bose-Einstein-condensed atoms in stationary periodic potentials being associated with the generation of truncated nonlinear Bloch states, existing in the gaps of the linear transmission spectrum. We reveal that unlike gap solitons, these novel localized states can have an arbitrary width defined solely by the size of the input beam while independent of nonlinearity.

Localized and Extended States in a Disordered Trap

International Nuclear Information System (INIS)

Pezze, Luca; Sanchez-Palencia, Laurent

2011-01-01

We study Anderson localization in a disordered potential combined with an inhomogeneous trap. We show that the spectrum displays both localized and extended states, which coexist at intermediate energies. In the region of coexistence, we find that the extended states result from confinement by the trap and are weakly affected by the disorder. Conversely, the localized states correspond to eigenstates of the disordered potential, which are only affected by the trap via an inhomogeneous energy shift. These results are relevant to disordered quantum gases and we propose a realistic scheme to observe the coexistence of localized and extended states in these systems.

Trapping cold ground state argon atoms.

Science.gov (United States)

Edmunds, P D; Barker, P F

2014-10-31

We trap cold, ground state argon atoms in a deep optical dipole trap produced by a buildup cavity. The atoms, which are a general source for the sympathetic cooling of molecules, are loaded in the trap by quenching them from a cloud of laser-cooled metastable argon atoms. Although the ground state atoms cannot be directly probed, we detect them by observing the collisional loss of cotrapped metastable argon atoms and determine an elastic cross section. Using a type of parametric loss spectroscopy we also determine the polarizability of the metastable 4s[3/2](2) state to be (7.3±1.1)×10(-39)  C m(2)/V. Finally, Penning and associative losses of metastable atoms in the absence of light assisted collisions, are determined to be (3.3±0.8)×10(-10)  cm(3) s(-1).

Geometric Phases for Mixed States in Trapped Ions

International Nuclear Information System (INIS)

Lu Hongxia

2006-01-01

The generalization of geometric phase from the pure states to the mixed states may have potential applications in constructing geometric quantum gates. We here investigate the mixed state geometric phases and visibilities of the trapped ion system in both non-degenerate and degenerate cases. In the proposed quantum system, the geometric phases are determined by the evolution time, the initial states of trapped ions, and the initial states of photons. Moreover, special periods are gained under which the geometric phases do not change with the initial states changing of photon parts in both non-degenerate and degenerate cases. The high detection efficiency in the ion trap system implies that the mixed state geometric phases proposed here can be easily tested.

Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

Energy Technology Data Exchange (ETDEWEB)

Cerbu, F.; Madia, O.; Afanas' ev, V. V.; Houssa, M.; Stesmans, A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Andreev, D. V. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Bauman Moscow State Technical University—Kaluga Branch, 248000 Kaluga, Moscow obl. (Russian Federation); Fadida, S.; Eizenberg, M. [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel); Breuil, L. [imec, 3001 Leuven (Belgium); Lisoni, J. G. [imec, 3001 Leuven (Belgium); Institute of Physics and Mathematics, Faculty of Science, Universidad Austral de Chile, Valdivia (Chile); Kittl, J. A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, 78754 Texas (United States); Strand, J.; Shluger, A. L. [Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

2016-05-30

Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO{sub 2}, suggesting that alternative defect models should be considered.

Radiation of electrons in an electromagnetic axial trap

International Nuclear Information System (INIS)

Toropova, A.I.

1998-01-01

The version of a trap. wherein particles move in a homogeneous constant magnetic field and electrostatic field, formed by two equipotential planes and rotation axial surface, is proposed. The solution of canonic equations is found. It is shown that interaction of electrons with the radiation field leads to damping parametric resonance. The trap model, accounting for the finite conductivity of the resonator walls and losses by collisions with gas, is studied

Role of trapped and solvated electrons in Ps formation

International Nuclear Information System (INIS)

Stepanov, S.V.; Byakov, V.M.; Mikhin, K.V.; He, C.; Hirade, T.

2005-01-01

Role of trapped and solvated electrons in Ps formation is discussed. Combination of thermalized positron with such electrons is possible from the view point of the energy balance and may results in Ps formation. This process proceeds during all e = lifetime matter. Fitting of raw experimental e + -e - annihilation spectra has to be based on an adequate physical input, which often leads to necessity of nonexponential deconvolution of the spectra. We have interpreted the Ps formation data in polyethylene, ethylene-methylmethacrylate and polymethylmethacrylate in dark and in light vs. tome of the measurement and temperature. parameters characterized accumulation of trapped electrons and their recombination with counter ions and positrons are obtained. (author)

Electron self-injection and acceleration in the bubble regime of laser-plasma interaction

International Nuclear Information System (INIS)

Kostyukov, I.; Nerush, E.

2010-01-01

Complete text of publication follows. The intense laser-plasma and beam-plasma interactions are highly nonlinear-phenomena, which besides being of fundamental interest, attract a great attention due to a number of important applications. One of the key applications is particle acceleration based on excitation of the strong plasma wakefield by laser pulse. In the linear regime of interaction when the laser intensity is low the plasma wake is the linear plasma wave. Moreover, the ponderomotive force of the laser pulse pushes out the plasma electrons from high intensity region leaving behind the laser pulse the plasma cavity - bubble, which is almost free from the plasma electrons. This is the bubble the laser-plasma interaction. Although the bubble propagates with velocity, which is close to speed of light, the huge charge of unshielded ions inside the plasma cavity can trap the cold plasma electrons. Moreover, the electrons are trapped in the accelerated phase of the bubble plasma field thereby leading to efficient electron acceleration. The electron self-injection is an important advantage of the plasma-based acceleration, which allows to exclude the beam loading system requiring accurate synchronization and additional space. The recent experiments have demonstrated high efficiency of the electron self-injection. The beam quality is often of crucial importance in many applications ranging from inertial confinement fusion to the x-ray free electron lasers. Despite a great interest there is still a little theory for relativistic electron dynamics in the plasma wake in multidimensional geometry including electron self-injection. The dynamics of the self-injected electrons can be roughly divided into three stage: (i) electron scattering by the laser pulse, (ii) electron trapping by the bubble, (iii) electron acceleration in the bubble. We developed two analytical models for electron dynamics in the bubble field and verify them by direct measurements of model parameters

Ultralow-Power Electronic Trapping of Nanoparticles with Sub-10 nm Gold Nanogap Electrodes.

Science.gov (United States)

Barik, Avijit; Chen, Xiaoshu; Oh, Sang-Hyun

2016-10-12

We demonstrate nanogap electrodes for rapid, parallel, and ultralow-power trapping of nanoparticles. Our device pushes the limit of dielectrophoresis by shrinking the separation between gold electrodes to sub-10 nm, thereby creating strong trapping forces at biases as low as the 100 mV ranges. Using high-throughput atomic layer lithography, we manufacture sub-10 nm gaps between 0.8 mm long gold electrodes and pattern them into individually addressable parallel electronic traps. Unlike pointlike junctions made by electron-beam lithography or larger micron-gap electrodes that are used for conventional dielectrophoresis, our sub-10 nm gold nanogap electrodes provide strong trapping forces over a mm-scale trapping zone. Importantly, our technology solves the key challenges associated with traditional dielectrophoresis experiments, such as high voltages that cause heat generation, bubble formation, and unwanted electrochemical reactions. The strongly enhanced fields around the nanogap induce particle-transport speed exceeding 10 μm/s and enable the trapping of 30 nm polystyrene nanoparticles using an ultralow bias of 200 mV. We also demonstrate rapid electronic trapping of quantum dots and nanodiamond particles on arrays of parallel traps. Our sub-10 nm gold nanogap electrodes can be combined with plasmonic sensors or nanophotonic circuitry, and their low-power electronic operation can potentially enable high-density integration on a chip as well as portable biosensing.

Post-filament self-trapping of ultrashort laser pulses.

Science.gov (United States)

Mitrofanov, A V; Voronin, A A; Sidorov-Biryukov, D A; Andriukaitis, G; Flöry, T; Pugžlys, A; Fedotov, A B; Mikhailova, J M; Panchenko, V Ya; Baltuška, A; Zheltikov, A M

2014-08-15

Laser filamentation is understood to be self-channeling of intense ultrashort laser pulses achieved when the self-focusing because of the Kerr nonlinearity is balanced by ionization-induced defocusing. Here, we show that, right behind the ionized region of a laser filament, ultrashort laser pulses can couple into a much longer light channel, where a stable self-guiding spatial mode is sustained by the saturable self-focusing nonlinearity. In the limiting regime of negligibly low ionization, this post-filamentation beam dynamics converges to a large-scale beam self-trapping scenario known since the pioneering work on saturable self-focusing nonlinearities.

Self-learning estimation of quantum states

International Nuclear Information System (INIS)

Hannemann, Th.; Reiss, D.; Balzer, Ch.; Neuhauser, W.; Toschek, P.E.; Wunderlich, Ch.

2002-01-01

We report the experimental estimation of arbitrary qubit states using a succession of N measurements on individual qubits, where the measurement basis is changed during the estimation procedure conditioned on the outcome of previous measurements (self-learning estimation). Two hyperfine states of a single trapped 171 Yb + ion serve as a qubit. It is demonstrated that the difference in fidelity between this adaptive strategy and passive strategies increases in the presence of decoherence

Self-consistent static analysis of using nested-well plasma traps for achieving antihydrogen recombination

International Nuclear Information System (INIS)

Dolliver, D. D.; Ordonez, C. A.

1999-01-01

The use of a Malmberg-Penning type trap with nested electric potential wells to confine overlapping antiproton and positron plasmas for the purpose of producing low temperature antihydrogen is studied. Two approaches for confining antiproton and positron plasmas with a region of overlap are considered. In one approach the two components have a large temperature difference. In the other, one of the components is in a nonequilibrium 'antishielding' plasma state. A finite differences algorithm is used to solve Poisson's equation based on a simultaneous overrelaxation numerical approach. Self-consistent numerical results for required trap potentials and possible particle density profiles are presented

Formation of Deep Electron Trap by Yb3+ Codoping Leads into Super-Long Persistent Luminescence in Ce3+-doped Yttrium Aluminum Gallium Garnet Phosphors.

Science.gov (United States)

Ueda, Jumpei; Miyano, Shun; Tanabe, Setsuhisa

2018-05-23

The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Cr 3+ compound is one of the brightest persistent phosphors, but its persistent luminescence (PersL) duration is not so long due to the relatively shallow Cr 3+ electron trap. Comparing the vacuum referred binding energy of the electron trapping state by Cr 3+ and those by lanthanide ions, we selected Yb 3+ as a deeper electron trapping center. The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Yb 3+ phosphors show Ce 3+ :5d→4f green persistent luminescence after ceasing blue light excitation. The formation of Yb 2+ was confirmed by the increased intensity of absorption at 585 nm during the charging process. This result indicates that the Yb 3+ ions act as electron traps by capturing an electron. From the thermoluminescence glow curves, it was found the Yb 3+ trap makes much deeper electron trap with 1.01 eV depth than the Cr 3+ electron trap with 0.81 eV depth. This deeper Yb 3+ trap provides much slower detrapping rate of filled electron traps than the Cr 3+ -codoped persistent phosphor. In addition, by preparing transparent ceramics and optimizing Ce 3+ and Yb 3+ concentrations, the Y 3 Al 2 Ga 3 O 12 :Ce 3+ (0.2%)-Yb 3+ (0.1%) as-made transparent ceramic phosphor showed super long persistent luminescence for over 138.8 hours after ceasing blue light charging.

Regulation of electron temperature gradient turbulence by zonal flows driven by trapped electron modes

Science.gov (United States)

Asahi, Y.; Ishizawa, A.; Watanabe, T.-H.; Tsutsui, H.; Tsuji-Iio, S.

2014-05-01

Turbulent transport caused by electron temperature gradient (ETG) modes was investigated by means of gyrokinetic simulations. It was found that the ETG turbulence can be regulated by meso-scale zonal flows driven by trapped electron modes (TEMs), which are excited with much smaller growth rates than those of ETG modes. The zonal flows of which radial wavelengths are in between the ion and the electron banana widths are not shielded by trapped ions nor electrons, and hence they are effectively driven by the TEMs. It was also shown that an E × B shearing rate of the TEM-driven zonal flows is larger than or comparable to the growth rates of long-wavelength ETG modes and TEMs, which make a main contribution to the turbulent transport before excitation of the zonal flows.

Experimental evaluation of quantum computing elements (qubits) made of electrons trapped over a liquid helium film; Evaluation experimentale d'elements de calcul quantique (qubit) formes d'electrons pieges sur l'helium liquide

Energy Technology Data Exchange (ETDEWEB)

Rousseau, E

2006-12-15

An electron on helium presents a quantized energy spectrum. The interaction with the environment is considered sufficiently weak in order to allow the realization of a quantum bit (qubit) by using the first two energy levels. The first stage in the realization of this qubit was to trap and control a single electron. This is carried out thanks to a set of micro-fabricated electrodes defining a well of potential in which the electron is trapped. We are able with such a sample to trap and detect a variables number of electrons varying between one and around twenty. This then allowed us to study the static behaviour of a small number of electrons in a trap. They are supposed to crystallize and form structures called Wigner molecules. Such molecules have not yet been observed yet with electrons above helium. Our results bring circumstantial evidence for of Wigner crystallization. We then sought to characterize the qubit more precisely. We sought to carry out a projective reading (depending on the state of the qubit) and a measurement of the relaxation time. The results were obtained by exciting the electron with an incoherent electric field. A clean measurement of the relaxation time would require a coherent electric field. The conclusion cannot thus be final but it would seem that the relaxation time is shorter than calculated theoretically. That is perhaps due to a measurement of the relaxation between the oscillating states in the trap and not between the states of the qubit. (author)

Electron spin resonance from NV centers in diamonds levitating in an ion trap

International Nuclear Information System (INIS)

Delord, T; Nicolas, L; Schwab, L; Hétet, G

2017-01-01

We report observations of the electron spin resonance (ESR) of nitrogen vacancy centers in diamonds that are levitating in an ion trap. Using a needle Paul trap operating under ambient conditions, we demonstrate efficient microwave driving of the electronic spin and show that the spin properties of deposited diamond particles measured by the ESR are retained in the Paul trap. We also exploit the ESR signal to show angle stability of single trapped mono-crystals, a necessary step towards spin-controlled levitating macroscopic objects. (paper)

The energy distribution function of excess electrons trapped in the pulse irradiated low density polyethylene (LDPE)

International Nuclear Information System (INIS)

Wysocki, S.; Mazurek, L.; Karolczak, S.; Kroh, J.

1995-01-01

Distribution function D (E) of electrons trapped in irradiated LDPE was calculated on the basis of time resolved absorption spectra recorded at temperatures of 20-250 K. Variation of absorption spectra with time and temperature were observed and discussed in terms of simultaneous decay and relocation of electrons from shallow to deeper traps. Results obtained imply domination of trap limited transport for shallowly trapped electrons. For deeper traps, hopping mechanism is prevailing. (author)

Time-dependence hole and electron trapping effects in SIMOX buried oxides

International Nuclear Information System (INIS)

Boesch, H.E. Jr.; Taylor, T.L.; Hite, L.R.; Bailey, W.E.

1990-01-01

Back-channel threshold shift associated with the buried oxide layers of separation by implanted oxygen (SIMOX) and zone-melted recrystallization (ZMR) field-effect transistors (FETs) was measured following pulsed irradiation as a function of temperature and back-gate bias using a fast time-resolved I-V measurement technique. The SIMOX FETs showed large initial negative voltage shifts at 0.2 ms after irradiation followed by temperature- and bias-dependent additional negative shifts to 800s. Analysis and modeling of the results indicate efficient deep trapping of radiation-generated holes in the bulk of the oxide, substantial initial trapping of radiation-generated electrons in the oxide, and rapid removal of the trapped electrons by a thermal detrapping process. The ZMR FETs showed evidence of substantial trapping of holes alone in the oxide bulk

The role of electron-phonon interaction and non-Gaussian transport in spectral changes of trapped electrons in glasses

International Nuclear Information System (INIS)

Funabishi, K.; Hamill, W.H.

The continuous-time-random-walk (CTRW) model which was developed for electron scavenging reactions in polar glasses is extended to the phenomenon of spectral relaxation of electrons in shallow traps esub(t) - in a wider range of systems. The central role of electron-phonon coupling in understanding the initial electron localization, the ''pre-existing trap'', and electron transfer processes are emphasized. The reactivity of esub(t) - with scavengers, including protons, is discussed in terms of the theory of multi-phonon non-radiative transitions. (author)

Chaotic behavior, collective modes, and self-trapping in the dynamics of three coupled Bose-Einstein condensates

International Nuclear Information System (INIS)

Franzosi, Roberto; Penna, Vittorio

2003-01-01

The dynamics of the three coupled bosonic wells (trimer) containing N bosons is investigated within a standard (mean-field) semiclassical picture based on the coherent-state method. Various periodic solutions (configured as π-like, dimerlike, and vortex states) representing collective modes are obtained analytically when the fixed points of trimer dynamics are identified on the N=const submanifold in the phase space. Hyperbolic, maximum and minimum points are recognized in the fixed-point set by studying the Hessian signature of the trimer Hamiltonian. The system dynamics in the neighborhood of periodic orbits (associated with fixed points) is studied via numeric integration of trimer motion equations, thus revealing a diffused chaotic behavior (not excluding the presence of regular orbits), macroscopic effects of population inversion, and self-trapping. In particular, the behavior of orbits with initial conditions close to the dimerlike periodic orbits shows how the self-trapping effect of dimerlike integrable subregimes is destroyed by the presence of chaos

Macroscopic self-trapping in Bose-Einstein condensates: Analysis of a dynamical quantum phase transition

International Nuclear Information System (INIS)

Julia-Diaz, B.; Dagnino, D.; Martorell, J.; Polls, A.; Lewenstein, M.

2010-01-01

We consider a Bose-Einstein condensate in a double-well potential undergoing a dynamical transition from the regime of Josephson oscillations to the regime of self-trapping. We analyze the statistical properties of the ground state (or the highest excited state) of the Hamiltonian in these two regimes for attractive (repulsive) interactions. We demonstrate that it is impossible to describe the transition within the mean-field theory. In contrast, the transition proceeds through a strongly correlated delocalized state, with large quantum fluctuations, and spontaneous breaking of the symmetry.

The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

Science.gov (United States)

Rhee, Jihyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Ko, Daehyun; Ahn, Geumho; Jung, Haesun; Choi, Sung-Jin; Myong Kim, Dong; Kim, Dae Hwan

2018-02-01

Experimental extraction of the electron trap parameters which are associated with charge trapping into gate insulators under the positive bias temperature stress (PBTS) is proposed and demonstrated for the first time in amorphous indium-gallium-zinc-oxide thin-film transistors. This was done by combining the PBTS/recovery time-evolution of the experimentally decomposed threshold voltage shift (ΔVT) and the technology computer-aided design (TCAD)-based charge trapping simulation. The extracted parameters were the trap density (NOT) = 2.6 × 1018 cm-3, the trap energy level (ΔET) = 0.6 eV, and the capture cross section (σ0) = 3 × 10-19 cm2. Furthermore, based on the established TCAD framework, the relationship between the electron trap parameters and the activation energy (Ea) is comprehensively investigated. It is found that Ea increases with an increase in σ0, whereas Ea is independent of NOT. In addition, as ΔET increases, Ea decreases in the electron trapping-dominant regime (low ΔET) and increases again in the Poole-Frenkel (PF) emission/hopping-dominant regime (high ΔET). Moreover, our results suggest that the cross-over ΔET point originates from the complicated temperature-dependent competition between the capture rate and the emission rate. The PBTS bias dependence of the relationship between Ea and ΔET suggests that the electric field dependence of the PF emission-based electron hopping is stronger than that of the thermionic field emission-based electron trapping.

Electron beam ion trap bi-annual report 1996/1997

International Nuclear Information System (INIS)

Schneider, D.

1999-01-01

The research of the EBIT (Electron Beam Ion Trap) program in N Division of the Physics and Space Technology Directorate at LLNL continues to contribute significantly to the understanding of physical processes with low energy highly charged ions in atomic physics, plasma physics, and material science. Low-energy highly charged ions (up to U 92+ ), provided by the EBIT facilities, provide a unique laboratory opportunity to study high field effects in atomic structures and dynamic interaction processes. The formation, existence, and structure of highly charged ions in astrophysical environments and laboratory plasmas make highly charged ions desirable for diagnosing various plasma conditions. The strong interaction of highly charged ions with matter and the response of solid surfaces make them a sensitive analysis tool and possibly a future capability for materials modifications at the atomic scale (nano technology). These physical applications require a good understanding and careful study of the dynamics of the interactions of the ions with complex systems. The EBIT group hosted an international conference and a workshop on trapped charged particles. The various talks and discussions showed that physics research with trapped charged particles is a very active and attractive area of innovative research, and provides a basis for research efforts in new areas. It also became obvious that the EBIT/RETRAP project has unique capabilities to perform important new experiments with trapped very highly charged ions at rest, which are complementary to and competitive with research at heavy ion storage rings and other trapping facilities planned or in operation in Europe, Japan, and the United States. Atomic structure research at EBIT provides ever better and more experimental complete benchmark data, supplying data needed to improve atomic theories. Research highlights through 1996 and 1997 include hyperfine structure measurements in H-like ions, QED studies, lifetime and

Self-trapping mechanisms in the dynamics of three coupled Bose-Einstein condensates

International Nuclear Information System (INIS)

Franzosi, Roberto; Penna, Vittorio

2002-01-01

We formulate the dynamics of three coupled Bose-Einstein condensates within a semiclassical scenario based on the standard boson coherent states. We compare such a picture with that of K. Nemoto et al. [Phys. Rev. A 63, 013604 (2001)] and show how our approach entails a simple formulation of the dimeric regime therein studied. This allows us to recognize the parameters that govern the bifurcation mechanism causing self-trapping, and paves the way to the construction of analytic solutions

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

Science.gov (United States)

Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

2018-04-01

We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

Characterization of nonequilibrium states of trapped Bose–Einstein condensates

Science.gov (United States)

Yukalov, V. I.; Novikov, A. N.; Bagnato, V. S.

2018-06-01

The generation of different nonequilibrium states in trapped Bose–Einstein condensates is studied by numerically solving the nonlinear Schrödinger equation. Inducing nonequilibrium states by shaking a trap creates the following states: weak nonequilibrium, the state of vortex germs, the state of vortex rings, the state of straight vortex lines, the state of deformed vortices, vortex turbulence, grain turbulence, and wave turbulence. A characterization of nonequilibrium states is advanced by introducing effective temperature, Fresnel number, and Mach number.

Scheme for teleportation of unknown states of trapped ion

Institute of Scientific and Technical Information of China (English)

Chen Mei-Feng; Ma Song-She

2008-01-01

A scheme is presented for teleporting an unknown state in a trapped ion system.The scheme only requires a single laser beam.It allows the trap to be in any state with a few phonons,e.g.a thermal motion.Furthermore,it works in the regime,where the Rabi frequency of the laser is on the order of the trap frequency.Thus,the teleportation speed is greatly increased,which is important for decreasing the decoherence effect.This idea can also be used to teleport an unknown ionic entangled state.

A variational study of the self-trapped magnetic polaron formation in double-exchange model

International Nuclear Information System (INIS)

Liu Tao; Feng Mang; Wang Kelin

2005-01-01

We study the formation of self-trapped magnetic polaron (STMP) in an antiferro/ferromagnetic double-exchange model semi-analytically by variational solutions. It is shown that the Jahn-Teller effect is not essential to the STMP formation and the STMP forms in the antiferromagnetic material within the region of the order of the lattice constant. We also confirm that no ground state STMP exists in the ferromagnetic background, but the ground state bound MP could appear due to the impurity potential

A small electron beam ion trap/source facility for electron/neutral–ion collisional spectroscopy in astrophysical plasmas

Science.gov (United States)

Liang, Gui-Yun; Wei, Hui-Gang; Yuan, Da-Wei; Wang, Fei-Lu; Peng, Ji-Min; Zhong, Jia-Yong; Zhu, Xiao-Long; Schmidt, Mike; Zschornack, Günter; Ma, Xin-Wen; Zhao, Gang

2018-01-01

Spectra are fundamental observation data used for astronomical research, but understanding them strongly depends on theoretical models with many fundamental parameters from theoretical calculations. Different models give different insights for understanding a specific object. Hence, laboratory benchmarks for these theoretical models become necessary. An electron beam ion trap is an ideal facility for spectroscopic benchmarks due to its similar conditions of electron density and temperature compared to astrophysical plasmas in stellar coronae, supernova remnants and so on. In this paper, we will describe the performance of a small electron beam ion trap/source facility installed at National Astronomical Observatories, Chinese Academy of Sciences.We present some preliminary experimental results on X-ray emission, ion production, the ionization process of trapped ions as well as the effects of charge exchange on the ionization.

Generation of Arbitrary Pure States for Three-dimensional Motion of a Trapped Ion

International Nuclear Information System (INIS)

Li Dachuang; Dong Ping; Cao Zhuoliang; Wang Xianping; Yang Ming

2010-01-01

In this paper, we propose a scheme for generating an arbitrary three-dimensional pure state of vibrational motion of a trapped ion. Our scheme is based on a sequence of laser pulses, which are tuned to the appropriate vibrational sidebands with respect to the appropriate electronic transition. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Electronic circuit provides automatic level control for liquid nitrogen traps

Science.gov (United States)

Turvy, R. R.

1968-01-01

Electronic circuit, based on the principle of increased thermistor resistance corresponding to decreases in temperature provides an automatic level control for liquid nitrogen cold traps. The electronically controlled apparatus is practically service-free, requiring only occasional reliability checks.

Strong Electron Self-Cooling in the Cold-Electron Bolometers Designed for CMB Measurements

Science.gov (United States)

Kuzmin, L. S.; Pankratov, A. L.; Gordeeva, A. V.; Zbrozhek, V. O.; Revin, L. S.; Shamporov, V. A.; Masi, S.; de Bernardis, P.

2018-03-01

We have realized cold-electron bolometers (CEB) with direct electron self-cooling of the nanoabsorber by SIN (Superconductor-Insulator-Normal metal) tunnel junctions. This electron self-cooling acts as a strong negative electrothermal feedback, improving noise and dynamic properties. Due to this cooling the photon-noise-limited operation of CEBs was realized in array of bolometers developed for the 345 GHz channel of the OLIMPO Balloon Telescope in the power range from 10 pW to 20 pW at phonon temperature Tph =310 mK. The negative electrothermal feedback in CEB is analogous to TES but instead of artificial heating we use cooling of the absorber. The high efficiency of the electron self-cooling to Te =100 mK without power load and to Te=160 mK under power load is achieved by: - a very small volume of the nanoabsorber (0.02 μm3) and a large area of the SIN tunnel junctions, - effective removal of hot quasiparticles by arranging double stock at both sides of the junctions and close position of the normal metal traps, - self-protection of the 2D array of CEBs against interferences by dividing them between N series CEBs (for voltage interferences) and M parallel CEBs (for current interferences), - suppression of Andreev reflection by a thin layer of Fe in the AlFe absorber. As a result even under high power load the CEBs are working at electron temperature Te less than Tph . To our knowledge, there is no analogue in the bolometers technology in the world for bolometers working at electron temperature colder than phonon temperature.

PIC simulations of the trapped electron filamentation instability in finite-width electron plasma waves

Science.gov (United States)

Winjum, B. J.; Banks, J. W.; Berger, R. L.; Cohen, B. I.; Chapman, T.; Hittinger, J. A. F.; Rozmus, W.; Strozzi, D. J.; Brunner, S.

2012-10-01

We present results on the kinetic filamentation of finite-width nonlinear electron plasma waves (EPW). Using 2D simulations with the PIC code BEPS, we excite a traveling EPW with a Gaussian transverse profile and a wavenumber k0λDe= 1/3. The transverse wavenumber spectrum broadens during transverse EPW localization for small width (but sufficiently large amplitude) waves, while the spectrum narrows to a dominant k as the initial EPW width increases to the plane-wave limit. For large EPW widths, filaments can grow and destroy the wave coherence before transverse localization destroys the wave; the filaments in turn evolve individually as self-focusing EPWs. Additionally, a transverse electric field develops that affects trapped electrons, and a beam-like distribution of untrapped electrons develops between filaments and on the sides of a localizing EPW. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344 and funded by the Laboratory Research and Development Program at LLNL under project tracking code 12-ERD-061. Supported also under Grants DE-FG52-09NA29552 and NSF-Phy-0904039. Simulations were performed on UCLA's Hoffman2 and NERSC's Hopper.

Phase-Space Density Analyses of the AE-8 Trapped Electron and the AP-8 Trapped Proton Model Environments

Energy Technology Data Exchange (ETDEWEB)

T.E. Cayton

2005-08-12

The AE-8 trapped electron and the AP-8 trapped proton models are used to examine the L-shell variation of phase-space densities for sets of transverse (or 1st) invariants, {mu}, and geometrical invariants, K (related to the first two adiabatic invariants). The motivation for this study is twofold: first, to discover the functional dependence of the phase-space density upon the invariants; and, second, to explore the global structure of the radiation belts within this context. Variation due to particle rest mass is considered as well. The overall goal of this work is to provide a framework for analyzing energetic particle data collected by instruments on Global Positioning System (GPS) spacecraft that fly through the most intense region of the radiation belt. For all considered values of {mu} and K, and for 3.5 R{sub E} < L < 6.5 R{sub E}, the AE-8 electron phase-space density increases with increasing L; this trend--the expected one for a population diffusing inward from an external source--continues to L = 7.5 R{sub E} for both small and large values of K but reverses slightly for intermediate values of K. The AP-8 proton phase-space density exhibits {mu}-dependent local minima around L = 5 R{sub E}. Both AE-8 and AP-8 exhibit critical or cutoff values for the invariants beyond which the flux and therefore the phase-space density vanish. For both electrons and protons, these cutoff values vary systematically with magnetic moment and L-shell and are smaller than those estimated for the atmospheric loss cone. For large magnetic moments, for both electrons and protons, the K-dependence of the phase-space density is exponential, with maxima at the magnetic equator (K = 0) and vanishing beyond a cutoff value, K{sub c}. Such features suggest that momentum-dependent trapping boundaries, perhaps drift-type loss cones, serve as boundary conditions for trapped electrons as well as trapped protons.

Phase-Space Density Analyses of the AE-8 Trapped Electron and the AP-8 Trapped Proton Model Environments

International Nuclear Information System (INIS)

Cayton, Thomas E.

2005-01-01

The AE-8 trapped electron and the AP-8 trapped proton models are used to examine the L-shell variation of phase-space densities for sets of transverse (or 1st) invariants, μ, and geometrical invariants, K (related to the first two adiabatic invariants). The motivation for this study is twofold: first, to discover the functional dependence of the phase-space density upon the invariants; and, second, to explore the global structure of the radiation belts within this context. Variation due to particle rest mass is considered as well. The overall goal of this work is to provide a framework for analyzing energetic particle data collected by instruments on Global Positioning System (GPS) spacecraft that fly through the most intense region of the radiation belt. For all considered values of μ and K, and for 3.5 R E E , the AE-8 electron phase-space density increases with increasing L; this trend--the expected one for a population diffusing inward from an external source--continues to L = 7.5 R E for both small and large values of K but reverses slightly for intermediate values of K. The AP-8 proton phase-space density exhibits μ-dependent local minima around L = 5 R E . Both AE-8 and AP-8 exhibit critical or cutoff values for the invariants beyond which the flux and therefore the phase-space density vanish. For both electrons and protons, these cutoff values vary systematically with magnetic moment and L-shell and are smaller than those estimated for the atmospheric loss cone. For large magnetic moments, for both electrons and protons, the K-dependence of the phase-space density is exponential, with maxima at the magnetic equator (K = 0) and vanishing beyond a cutoff value, K c . Such features suggest that momentum-dependent trapping boundaries, perhaps drift-type loss cones, serve as boundary conditions for trapped electrons as well as trapped protons

Reduction of charge trapping and electron tunneling in SIMOX by supplemental implantation of oxygen

International Nuclear Information System (INIS)

Stahlbush, R.E.; Hughes, H.L.; Krull, W.A.

1993-01-01

Silicon-on-insulator, SOI, technologies are being aggressively pursued to produce high density, high speed, radiation tolerant electronics. The dielectric isolation of the buried oxide makes it possible to design integrated circuits that greatly minimize single event upset and eliminate dose-rate induced latchup and upset. The reduction of excess-silicon related defects in SIMOX by the supplemental implantation of oxygen has been examined. The supplemental implant is 6% of the oxygen dose used to form the buried oxide, and is followed by a 1,000 C anneal, in contrast to the >1,300 C anneal used to form the buried oxide layer of SIMOX. The defects examined include shallow electron traps, deep hole traps, and silicon clusters. The radiation-induced shallow electron and deep hole trapping are measured by cryogenic detrapping and isothermal annealing techniques. The low-field (3 to 6 MV/cm) electron tunneling is interpreted as due to a two phase mixture of stoichiometric SiO 2 and Si clusters a few nm in size. Single and triple SIMOS samples have been examined. All of the defects are reduced by the supplemental oxygen processing. Shallow electron trapping is reduced by an order of magnitude. Because of the larger capture cross section for hole trapping, hole trapping is not reduced as much. The low-field electron tunneling due to Si clusters is also significantly reduced. Both uniform and nonuniform electron tunneling have been observed in SIMOX samples without supplement processing. In samples exhibiting only uniform tunneling, electron capture at holes has been observed. The nonuniform tunneling is superimposed upon the uniform tunneling and is characterized by current spiking

Photoconductivity and bleaching of trapped electrons at 770C in irradiated methylcyclohexane

International Nuclear Information System (INIS)

Dolivo, G.; Gaeumann, T.

1977-01-01

The influence of the wavelength and intensity of the bleaching radiation on the thermoluminescence, thermoconductivity, optical absorption and photoconductivity of the methylcyclohexane, protonated and deuterated, was studied. The energy level scheme of the trapped electron in this alkane is very similar to that found in MTHF and 3-MP. The rate of bleaching of the trapped electrons is less in the deuterated product. (U.K.)

Self-trapping of helium in metals

International Nuclear Information System (INIS)

Wilson, W.D.; Bisson, C.L.; Baskes, M.I.

1981-01-01

Atomistic calculations are presented which demonstrate that helium atoms in a metal lattice are able to cluster with each other, producing vacancies and nearby self-interstitial defects. Even a small number of helium atoms is found to be sufficient to create these large distortions. As few as five interstitial helium can spontaneously produce a lattice vacancy and nearby self-interstitial. An eight-helium-atom cluster gives rise to two such defects, and 16 helium atoms to more than five self-interstitial vacancy pairs. It was noted that the self-interstitials prefer to agglomerate on the same ''side'' of the helium cluster rather than to spread themselves out uniformly. The binding energy of each additional helium atom to these clusters increases with helium concentration and the trap is apparently unsaturable. A rate theory using these atomistic binding energies has been used to calculate the kinetics of helium-bubble nucleation and growth. The results are consistent with measurements of the properties of helium resulting from tritium decay

Intrinsic charge trapping in amorphous oxide films: status and challenges

Science.gov (United States)

Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

2018-06-01

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection

Asymptotic theory of dissipative trapped electron mode overlapping many rational surfaces

International Nuclear Information System (INIS)

Rogister, A.; Hasselberg, G.

1978-01-01

The two dimensional eigenvalue equation describing the dissipative trapped electron mode is solved exactly in the limit of the mode overlapping many rational surfaces using the Pogutse model for the magnetic field and the pitch angle collision operator. The trapped electron contribution to the growth rate decreases, with respect to the standard theory, by a factor of order Δ/chi sub(T) << 1 where chi sub(T) is the position of the turning point and Δ the distance between rational surfaces

Dependence of the confinement time of an electron plasma on the magnetic field in a quadrupole Penning trap

Energy Technology Data Exchange (ETDEWEB)

Dyavappa, B.M.; Datar, Durgesh; Prakash; Ananthamurthy, Sharath [Bangalore University, Department of Physics, Bangalore (India)

2017-12-15

A quadrupole Penning trap is used to confine electrons in weak magnetic fields. Perturbations due to space charge and imperfections in the trap geometry, as well as collisions with the background gas molecules, lead to loss of the electrons from the trap. We present in this work the results on measurements of the electron confinement time and its dependence on the magnetic field in a quadrupolar Penning trap. We describe a method to measure the confinement time of an electron cloud under weak magnetic fields (0.01 T - 0.1 T). This time is found to scale as τ ∝ B{sup 1.41} in variance with the theoretically expected confinement time that scales as τ ∝ B{sup 2} for trapped electrons that are lost through collisions with the neutrals present in the trap. A measurement of the expansion rate of the electron plasma in the trap through controlled variation of the trap voltage, yields expansion times that depend on the energy of escaping electrons. This is found to vary in our case in the scaling range B{sup 0.32} to B{sup 0.43}. Distorting the geometry of the trap, results in a marked change in the confinement time's dependence on the magnetic field. The results indicate that the confinement time of the electron cloud in the trap is limited by both, effects of collisions and perturbations that result in the plasma loss through expansion in the trap. (orig.)

Tuning the Electronic and Dynamical Properties of a Molecule by Atom Trapping Chemistry.

Science.gov (United States)

Pham, Van Dong; Repain, Vincent; Chacon, Cyril; Bellec, Amandine; Girard, Yann; Rousset, Sylvie; Abad, Enrique; Dappe, Yannick J; Smogunov, Alexander; Lagoute, Jérôme

2017-11-28

The ability to trap adatoms with an organic molecule on a surface has been used to obtain a range of molecular functionalities controlled by the choice of the molecular trapping site and local deprotonation. The tetraphenylporphyrin molecule used in this study contains three types of trapping sites: two carbon rings (phenyl and pyrrole) and the center of a macrocycle. Catching a gold adatom on the carbon rings leads to an electronic doping of the molecule, whereas trapping the adatom at the macrocycle center with single deprotonation leads to a molecular rotor and a second deprotonation leads to a molecular jumper. We call "atom trapping chemistry" the control of the structure, electronic, and dynamical properties of a molecule achieved by trapping metallic atoms with a molecule on a surface. In addition to the examples previously described, we show that more complex structures can be envisaged.

Extraction of highly charged ions from the Berlin Electron Beam Ion Trap for interactions with a gas target

International Nuclear Information System (INIS)

Allen, F.I.; Biedermann, C.; Radtke, R.; Fussmann, G.

2006-01-01

Highly charged ions are extracted from the Berlin Electron Beam Ion Trap for investigations of charge exchange with a gas target. The classical over-the-barrier model for slow highly charged ions describes this process, whereby one or more electrons are captured from the target into Rydberg states of the ion. The excited state relaxes via a radiative cascade of the electron to ground energy. The cascade spectra are characteristic of the capture state. We investigate x-ray photons emitted as a result of interactions between Ar 17+ ions at energies ≤5q keV with Ar atoms. Of particular interest is the velocity dependence of the angular momentum capture state l c

Study of the motion of electrons in non polar classical liquids. Measurement of Hall effect and f.i.r. search for low energy traps. Progress report

International Nuclear Information System (INIS)

1981-01-01

Progress is reported on experiments aimed at the measurement of the Hall mobility of injected electrons in classical non polar insulating liquids and the optical absorption associated with electrons captured by shallow traps in the liquefied rare gases. Theoretical work aimed at a better understanding of the trapping kinetics of electrons by SF 6 and O 2 dissolved in rare gas liquids was also carried out. Its conclusion is that the electric field dependence of the trapping probability can be explained, basically without adjustable parameters, by considering the Poole-Frenkel-Schotky ionization of the excited state of the traps. From the analysis of published data on the motion of electrons in liquid ethane it is tentatively concluded that at low temperatures the trapping of electrons in the liquid involves a Jahn-Teller like distortion of a single ethane molecule while at higher temperatures it is necessary to consider a small molecular cluster, possibly made up of 2 molecules

Asymmetric Penning trap coherent states

International Nuclear Information System (INIS)

Contreras-Astorga, Alonso; Fernandez, David J.

2010-01-01

By using a matrix technique, which allows to identify directly the ladder operators, the coherent states of the asymmetric Penning trap are derived as eigenstates of the appropriate annihilation operators. They are compared with those obtained through the displacement operator method.

Stability and Polaronic Motion of Self-Trapped Holes in Silver Halides

DEFF Research Database (Denmark)

Loftager, Simon; Garcia-Fernandez, P.; Aramburu, J. A.

2016-01-01

Polarons and their associated transport properties are a field of great current interest both in chemistry and physics. To further our understanding of these quasi-particles, we have carried out first-principles calculations of self-trapped holes (STHs) in the model compounds AgCl and AgBr, for w......Polarons and their associated transport properties are a field of great current interest both in chemistry and physics. To further our understanding of these quasi-particles, we have carried out first-principles calculations of self-trapped holes (STHs) in the model compounds AgCl and Ag...

Ion trapping in one-minimum potentials via charge-exchange collisions

International Nuclear Information System (INIS)

Maier, H.; Kuhn, S.

1994-01-01

A (1 d, 2 v), electrostatic, kinetics model for time-independent single-ended Q-machine states with a positively biased cold plate and a single internal minimum near the hot plate is presented. While the electrons are treated as collisionless, charge-exchange collisions between the ions and the neutral background gas atoms are taken into account by means of a linearized Boltzmann collision operator. The self-consistent plasma states are found by using an iterative analytic-numerical trajectory-simulation method in which the charge-density and potential distributions are alternately determined numerical results clearly demonstrate the sensitive role that trapped ions play in shaping the microscopic and macroscopic properties of the dc states under study. The trapped-ion distributions themselves are shown to be controlled critically by the detailed scattering conditions, which in turn are determined by the choice of the background properties. (author). 10 refs, 3 figs

A metastable helium trap for atomic collision physics

International Nuclear Information System (INIS)

Colla, M.; Gulley, R.; Uhlmann, L.; Hoogerland, M.D.; Baldwin, K.G.H.; Buckman, S.J.

1999-01-01

Full text: Metastable helium in the 2 3 S state is an important species for atom optics and atomic collision physics. Because of its large internal energy (20eV), long lifetime (∼8000s) and large collision cross section for a range of processes, metastable helium plays an important role in atmospheric physics, plasma discharges and gas laser physics. We have embarked on a program of studies on atom-atom and electron-atom collision processes involving cold metastable helium. We confine metastable helium atoms in a magneto-optic trap (MOT), which is loaded by a transversely collimated, slowed and 2-D focussed atomic beam. We employ diode laser tuned to the 1083 nm (2 3 S 1 - 2 3 P2 1 ) transition to generate laser cooling forces in both the loading beam and the trap. Approximately 10 million helium atoms are trapped at temperatures of ∼ 1mK. We use phase modulation spectroscopy to measure the trapped atomic density. The cold, trapped atoms can collide to produce either atomic He + or molecular He 2 + ions by Penning Ionisation (PI) or Associative Ionisation (AI). The rate of formation of these ions is dependant upon the detuning of the trapping laser from resonance. A further laser can be used to connect the 2 3 S 1 state to another higher lying excited state, and variation of the probe laser detuning used to measure interatomic collision potential. Electron-atom collision processes are studied using a monochromatic electron beam with a well defined spatial current distribution. The total trap loss due to electron collisions is measured as a function of electron energy. Results will be presented for these atomic collision physics measurements involving cold, trapped metastable helium atoms. Copyright (1999) Australian Optical Society

Spectroscopy of a Synthetic Trapped Ion Qubit

Science.gov (United States)

Hucul, David; Christensen, Justin E.; Hudson, Eric R.; Campbell, Wesley C.

2017-09-01

133Ba+ has been identified as an attractive ion for quantum information processing due to the unique combination of its spin-1 /2 nucleus and visible wavelength electronic transitions. Using a microgram source of radioactive material, we trap and laser cool the synthetic A =133 radioisotope of barium II in a radio-frequency ion trap. Using the same, single trapped atom, we measure the isotope shifts and hyperfine structure of the 62P1 /2↔62S1 /2 and 62P1 /2↔52D3 /2 electronic transitions that are needed for laser cooling, state preparation, and state detection of the clock-state hyperfine and optical qubits. We also report the 62P1 /2↔52D3 /2 electronic transition isotope shift for the rare A =130 and 132 barium nuclides, completing the spectroscopic characterization necessary for laser cooling all long-lived barium II isotopes.

Carrier emission from the electronic states of self-assembled indium arsenide quantum dots

International Nuclear Information System (INIS)

Lin, S.W.; Song, A.M.; Missous, M.; Hawkins, I.D; Hamilton, B.; Engstroem, O.; Peaker, A.R.

2006-01-01

We have used the new technique of high resolution (Laplace) transient spectroscopy to examine the electronic states of ensembles of self-assembled quantum dots of InAs in a GaAs matrix. These have been produced by solid source MBE. We have monitored the s and p state occupancies as a function of time under thermal excitation over a range of temperatures after electrons have been captured by the quantum dots with different Fermi level positions. This can provide more information about the interaction of the dots with the host matrix than is possible with optical techniques and gives new fundamental insights into how such dots may operate in electronic devices such as memory and sensors. The increase in resolution of Laplace transient spectroscopy over conventional experiments reveals quite specific rates of carrier loss which we attribute to tunnelling at low temperatures and a combination of thermal emission and tunnelling as the temperature is increased

Homoclinic chaos in the discrete self-trapping trimer

DEFF Research Database (Denmark)

Hennig, D.; Gabriel, H.; Jørgensen, Michael Finn

1995-01-01

We study the discrete self-trapping (DST) equation with three degrees of freedom. By taking the DST dimer as the underlying unperturbed system we treat the coupling to the additional oscillator as a small perturbation. Using the generalized Melnikov method we prove the existence of homoclinic chaos...

Beam self-trapping in a BCT crystal

Science.gov (United States)

Matusevich, V.; Kiessling, A.; Kowarschik, R.; Zagorskiy, A. E.; Shepelevich, V. V.

2006-01-01

We present some aspects of wave self-focusing and self-defocusing in a photorefractive Ba 0.77Ca 0.23TiO 3 (BCT) crystal without external electric field and without background illumination. The effects depend on the cross-section of the input beam. We show that by decreasing of the diameter of the input beam from 730 μm the fanning effect disappears at 150 μm. A symmetrical self-focusing is observed for input diameters from 150 um down to 40 μm and a symmetrical self-defocusing for input diameters from 40 μm down to 20 μm. The 1D self-trapping is detected at 65 μm in BCT. Light power and wavelength are correspondingly 3 mW and 633 nm. The experimental results are supplemented with numerical calculations based on both photovoltaic model and model of screening soliton.

On the correct implementation of Fermi-Dirac statistics and electron trapping in nonlinear electrostatic plane wave propagation in collisionless plasmas

Science.gov (United States)

Schamel, Hans; Eliasson, Bengt

2016-05-01

Quantum statistics and electron trapping have a decisive influence on the propagation characteristics of coherent stationary electrostatic waves. The description of these strictly nonlinear structures, which are of electron hole type and violate linear Vlasov theory due to the particle trapping at any excitation amplitude, is obtained by a correct reduction of the three-dimensional Fermi-Dirac distribution function to one dimension and by a proper incorporation of trapping. For small but finite amplitudes, the holes become of cnoidal wave type and the electron density is shown to be described by a ϕ ( x ) 1 / 2 rather than a ϕ ( x ) expansion, where ϕ ( x ) is the electrostatic potential. The general coefficients are presented for a degenerate plasma as well as the quantum statistical analogue to these steady state coherent structures, including the shape of ϕ ( x ) and the nonlinear dispersion relation, which describes their phase velocity.

The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

International Nuclear Information System (INIS)

Flament, O.; Fleetwood, D.M.; Leray, J.L.; Paillet, P.; Riewe, L.C.; Winokur, P.S.

1999-01-01

Deep and shallow electron traps form in irradiated thermal SiO 2 as a natural response to hole transport and trapping. The density and stability of these defects are discussed, as are their implications for total-dose modeling

Coupling a Surface Acoustic Wave to an Electron Spin in Diamond via a Dark State

Directory of Open Access Journals (Sweden)

D. Andrew Golter

2016-12-01

Full Text Available The emerging field of quantum acoustics explores interactions between acoustic waves and artificial atoms and their applications in quantum information processing. In this experimental study, we demonstrate the coupling between a surface acoustic wave (SAW and an electron spin in diamond by taking advantage of the strong strain coupling of the excited states of a nitrogen vacancy center while avoiding the short lifetime of these states. The SAW-spin coupling takes place through a Λ-type three-level system where two ground spin states couple to a common excited state through a phonon-assisted as well as a direct dipole optical transition. Both coherent population trapping and optically driven spin transitions have been realized. The coherent population trapping demonstrates the coupling between a SAW and an electron spin coherence through a dark state. The optically driven spin transitions, which resemble the sideband transitions in a trapped-ion system, can enable the quantum control of both spin and mechanical degrees of freedom and potentially a trapped-ion-like solid-state system for applications in quantum computing. These results establish an experimental platform for spin-based quantum acoustics, bridging the gap between spintronics and quantum acoustics.

Self-consistent electrostatic potential due to trapped plasma in the magnetosphere

International Nuclear Information System (INIS)

Miller, R.H.; Khazanov, G.V.

1993-01-01

The authors address the problem of the steady state confinement of plasma in a magnetic flux tube. They construct a steady state distribution function, under the assumption of no waves or collisions, using the kinematic constants of the motion, total energy and magnetic moment. The local particle densities are shown to be integrals over the equatorial distribution function for the particle of concern. The electric potential is determined by the imposition of quasineutrality. The authors show that their self consistent model produces potential drops which are consistent with the kinetic energy of the equatorially trapped particles. They comment on earlier work of Alfven and Faelthammar, and for a bi-Maxwellian distribution compare the results of the present model with the Alfven and Faelthammar model

Atomic physics of highly charged ions in an electron beam ion trap

International Nuclear Information System (INIS)

Marrs, R.E.

1990-07-01

Two electron beam ion traps are in use at LLNL for the purpose of studying the properties of very highly charged ions and their interactions with electrons. This paper reviews the operation of the traps and discusses recent experiments in three areas: precision transition energy measurements in the limit of very high ion charge, dielectronic recombination measurements for the He-like isoelectronic sequence, and measurements of x-ray polarization. 22 refs., 11 figs., 1 tab

Model of electron capture in low-temperature glasses

International Nuclear Information System (INIS)

Bartczak, W.M.; Swiatla, D.; Kroh, J.

1983-01-01

The new model of electron capture by a statistical variety of traps in glassy matrices is proposed. The electron capture is interpreted as the radiationless transition (assisted by multiphonon emission) of the mobile electron to the localized state in the trap. The conception of 'unfair' and 'fair' traps is introduced. The 'unfair' trap captures the mobile electron by the shallow excited state. In contrast, the 'fair' trap captures the electron by the ground state. The model calculations of the statistical distributions of the occupied electron traps are presented and discussed with respect to experimental results. (author)

Dopant controlled trap-filling and conductivity enhancement in an electron-transport polymer

Energy Technology Data Exchange (ETDEWEB)

Higgins, Andrew, E-mail: aehiggin@princeton.edu, E-mail: kahn@princeton.edu; Kahn, Antoine, E-mail: aehiggin@princeton.edu, E-mail: kahn@princeton.edu [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544-5263 (United States); Mohapatra, Swagat K.; Barlow, Stephen; Marder, Seth R. [Center for Organic Photonics and Electronics and School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332-0400 (United States)

2015-04-20

Charge transport in organic semiconductors is often inhibited by the presence of tail states that extend into the band gap of a material and act as traps for charge carriers. This work demonstrates the passivation of acceptor tail states by solution processing of ultra-low concentrations of a strongly reducing air-stable organometallic dimer, the pentamethylrhodocene dimer, [RhCp*Cp]{sub 2}, into the electron transport polymer poly([N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide) -2,6-diyl]-alt-5,5′-(2,2′-bithiophene)), P(NDI{sub 2}OD-T{sub 2}). Variable-temperature current-voltage measurements of n-doped P(NDI{sub 2}OD-T{sub 2}) are presented with doping concentration varied through two orders of magnitude. Systematic variation of the doping parameter is shown to lower the activation energy for hopping transport and enhance film conductivity and electron mobility.

X-ray spectroscopy of highly-ionized atoms in an electron beam ion trap (EBIT)

International Nuclear Information System (INIS)

Marrs, R.E.; Bennett, C.; Chen, M.H.

1988-01-01

An Electron Beam Ion Trap at Lawrence Livermore National Laboratory is being used to produce and trap very-highly-charged-ions (q /le/ 70+) for x-ray spectroscopy measurements. Recent measurements of dielectronic recombination, electron impact excitation and transition energies are presented. 15 refs., 12 figs., 1 tab

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Chi, Li-Feng, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

2015-03-23

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

International Nuclear Information System (INIS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-01-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process

General variational many-body theory with complete self-consistency for trapped bosonic systems

International Nuclear Information System (INIS)

Streltsov, Alexej I.; Alon, Ofir E.; Cederbaum, Lorenz S.

2006-01-01

In this work we develop a complete variational many-body theory for a system of N trapped bosons interacting via a general two-body potential. The many-body solution of this system is expanded over orthogonal many-body basis functions (configurations). In this theory both the many-body basis functions and the respective expansion coefficients are treated as variational parameters. The optimal variational parameters are obtained self-consistently by solving a coupled system of noneigenvalue--generally integro-differential--equations to get the one-particle functions and by diagonalizing the secular matrix problem to find the expansion coefficients. We call this theory multiconfigurational Hartree theory for bosons or MCHB(M), where M specifies explicitly the number of one-particle functions used to construct the configurations. General rules for evaluating the matrix elements of one- and two-particle operators are derived and applied to construct the secular Hamiltonian matrix. We discuss properties of the derived equations. We show that in the limiting cases of one configuration the theory boils down to the well-known Gross-Pitaevskii and the recently developed multi-orbital mean fields. The invariance of the complete solution with respect to unitary transformations of the one-particle functions is utilized to find the solution with the minimal number of contributing configurations. In the second part of our work we implement and apply the developed theory. It is demonstrated that for any practical computation where the configurational space is restricted, the description of trapped bosonic systems strongly depends on the choice of the many-body basis set used, i.e., self-consistency is of great relevance. As illustrative examples we consider bosonic systems trapped in one- and two-dimensional symmetric and asymmetric double well potentials. We demonstrate that self-consistency has great impact on the predicted physical properties of the ground and excited states

Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

2016-01-01

Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

Precision Measurement of the Electron's Electric Dipole Moment Using Trapped Molecular Ions

Science.gov (United States)

Cairncross, William B.; Gresh, Daniel N.; Grau, Matt; Cossel, Kevin C.; Roussy, Tanya S.; Ni, Yiqi; Zhou, Yan; Ye, Jun; Cornell, Eric A.

2017-10-01

We describe the first precision measurement of the electron's electric dipole moment (de) using trapped molecular ions, demonstrating the application of spin interrogation times over 700 ms to achieve high sensitivity and stringent rejection of systematic errors. Through electron spin resonance spectroscopy on 180Hf 19F+ in its metastable 3Δ1 electronic state, we obtain de=(0.9 ±7. 7stat±1. 7syst)×10-29 e cm , resulting in an upper bound of |de|<1.3 ×10-28 e cm (90% confidence). Our result provides independent confirmation of the current upper bound of |de|<9.4 ×10-29 e cm [J. Baron et al., New J. Phys. 19, 073029 (2017), 10.1088/1367-2630/aa708e], and offers the potential to improve on this limit in the near future.

Electron shakeoff following the β+ decay of +19Ne and +35Ar trapped ions

Science.gov (United States)

Fabian, X.; Fléchard, X.; Pons, B.; Liénard, E.; Ban, G.; Breitenfeldt, M.; Couratin, C.; Delahaye, P.; Durand, D.; Finlay, P.; Guillon, B.; Lemière, Y.; Mauger, F.; Méry, A.; Naviliat-Cuncic, O.; Porobic, T.; Quéméner, G.; Severijns, N.; Thomas, J.-C.

2018-02-01

The electron shakeoff of 19F and 35Cl atoms resulting from the β+ decay of +19Ne and +35Ar ions has been investigated using a Paul trap coupled to a time of flight recoil-ion spectrometer. The charge-state distributions of the recoiling daughter nuclei were compared to theoretical calculations based on the sudden approximation and accounting for subsequent Auger processes. The excellent agreement obtained for 35Cl is not reproduced in 19F. The shortcoming is attributed to the inaccuracy of the independent particle model employed to calculate the primary shakeoff probabilities in systems with rather low atomic numbers. This calls for more elaborate calculations, including explicitly the electron-electron correlations.

Ion production and trapping in electron rings

International Nuclear Information System (INIS)

Gluckstern, R.C.; Ruggiero, A.G.

1979-08-01

The electron beam in the VUV and X-ray rings of NSLS will ionize residual gas by collisions. Positive ions will be produced with low velocity, and will be attracted by the electron beam to the beam axis. If they are trapped in stable (transverse) orbits, they may accumulate, thereby increasing the ν/sub x,z/ of the individual electrons. Since the accumulated ions are unlikely to be of uniform density, a spread in ν/sub x,z/ will also occur. Should these effects be serious, it may be necessary to introduce clearing electrodes, although this may increase Z/n in the rings, thereby adding to longitudinal instability problems. The seriousness of the above effect for the VUV and X-ray rings is estimated

Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

International Nuclear Information System (INIS)

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Yugova, T. G.; Cox, H.; Helava, H.; Makarov, Yu.; Usikov, A. S.

2014-01-01

Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10 17  cm −3 to (2–5) × 10 14  cm −3 . The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10 13  cm −3 versus 2.9 × 10 16  cm −3 in the standard samples, with a similar decrease in the electron traps concentration

X-ray spectroscopy of hydrogen-like ions in an electron beam ion trap

Energy Technology Data Exchange (ETDEWEB)

Tarbutt, M.R.; Crosby, D.; Silver, J.D. [Univ. of Oxford, Clarendon Lab. (United Kingdom); Myers, E.G. [Dept. of Physics, Florida State Univ., Tallahassee, FL (United States); Nakamura, N.; Ohtani, S. [ICORP, JST, Chofu, Tokyo (Japan)

2001-07-01

The X-ray emission from highly charged hydrogen-like ions in an electron beam ion trap is free from the problems of satellite contamination and Doppler shifts inherent in fast-beam sources. This is a favourable situation for the measurement of ground-state Lamb shifts in these ions. We present recent progress toward this goal, and discuss a method whereby wavelength comparison between transitions in hydrogenlike ions of different nuclear charge Z, enable the measurement of QED effects without requiring an absolute calibration.

Trapped electrons as a free energy source for the auroral kilometric radiation

International Nuclear Information System (INIS)

Louarn, P.; Roux, A.; de Feraudy, H.; Le Queau, D.; Andre, M.; Matson, L.

1990-01-01

Simultaneous measurements of electromagnetic fields and particle distributions, measured during the crossing by the Swedish spacecraft Viking of an auroral kilometric radiation (AKR) source, are presented. It is shown that AKR is generated within an acceleration region characterized by an upward directed parallel electric field, as evidenced by its signature on the proton and electron distributions. From particle observations inside the AKR source it is clear that the potential drop below the spacecraft produces upward moving field-aligned ion beams and a depletion in the density of low energy electrons. The potential drop above the spacecraft produces downward accelerated electrons. A large fraction of these electrons have small parallel velocities; they mirror above the ionosphere. These trapped electrons lie in a region of velocity space which should be empty in a simple adiabatic theory. The authors suggest that these electrons get trapped when they experience a time-varying (or space-varying) parallel electric field. This conclusion is supported by the comparison between the observed electron distribution function and a model distribution function built by applying Liouville theorem. Since trapped electrons can cause positive gradients (∂f e /∂V perpendicular > 0) over a broad range of parallel velocities, around v parallel ∼ 0, it is suggested that they are the free energy source for the AKR. This conclusion is substantiated by an evaluation of the convective growth rate, where the various input parameters have been determined by fitting particle data

Fast Transverse Beam Instability Caused by Electron Cloud Trapped in Combined Function Magnets

Energy Technology Data Exchange (ETDEWEB)

Antipov, Sergey [Univ. of Chicago, IL (United States)

2017-03-01

Electron cloud instabilities affect the performance of many circular high-intensity particle accelerators. They usually have a fast growth rate and might lead to an increase of the transverse emittance and beam loss. A peculiar example of such an instability is observed in the Fermilab Recycler proton storage ring. Although this instability might pose a challenge for future intensity upgrades, its nature had not been completely understood. The phenomena has been studied experimentally by comparing the dynamics of stable and unstable beam, numerically by simulating the build-up of the electron cloud and its interaction with the beam, and analytically by constructing a model of an electron cloud driven instability with the electrons trapped in combined function dipoles. Stabilization of the beam by a clearing bunch reveals that the instability is caused by the electron cloud, trapped in beam optics magnets. Measurements of microwave propagation confirm the presence of the cloud in the combined function dipoles. Numerical simulations show that up to 10$^{-2}$ of the particles can be trapped by their magnetic field. Since the process of electron cloud build-up is exponential, once trapped this amount of electrons significantly increases the density of the cloud on the next revolution. In a combined function dipole this multi-turn accumulation allows the electron cloud reaching final intensities orders of magnitude greater than in a pure dipole. The estimated fast instability growth rate of about 30 revolutions and low mode frequency of 0.4 MHz are consistent with experimental observations and agree with the simulations. The created instability model allows investigating the beam stability for the future intensity upgrades.

Theoretical characterization on the size-dependent electron and hole trapping activity of chloride-passivated CdSe nanoclusters

Science.gov (United States)

Cui, Yingqi; Cui, Xianhui; Zhang, Li; Xie, Yujuan; Yang, Mingli

2018-04-01

Ligand passivation is often used to suppress the surface trap states of semiconductor quantum dots (QDs) for their continuous photoluminescence output. The suppression process is related to the electrophilic/nucleophilic activity of surface atoms that varies with the structure and size of QD and the electron donating/accepting nature of ligand. Based on first-principles-based descriptors and cluster models, the electrophilic/nucleophilic activities of bare and chloride-coated CdSe clusters were studied to reveal the suppression mechanism of Cl-passivated QDs and compared to experimental observations. The surface atoms of bare clusters have higher activity than inner atoms and their activity decreases with cluster size. In the ligand-coated clusters, the Cd atom remains as the electrophilic site, while the nucleophilic site of Se atoms is replaced by Cl atoms. The activities of Cd and Cl atoms in the coated clusters are, however, remarkably weaker than those in bare clusters. Cluster size, dangling atoms, ligand coverage, electronegativity of ligand atoms, and solvent (water) were found to have considerable influence on the activity of surface atoms. The suppression of surface trap states in Cl-passivated QDs was attributed to the reduction of electrophilic/nucleophilic activity of Cd/Se/Cl atoms. Both saturation to under-coordinated surface atoms and proper selection for the electron donating/accepting strength of ligands are crucial for eliminating the charge carrier traps. Our calculations predicted a similar suppressing effect of chloride ligands with experiments and provided a simple but effective approach to assess the charge carrier trapping behaviors of semiconductor QDs.

Trapping cold ground state argon atoms for sympathetic cooling of molecules

OpenAIRE

Edmunds, P. D.; Barker, P. F.

2014-01-01

We trap cold, ground-state, argon atoms in a deep optical dipole trap produced by a build-up cavity. The atoms, which are a general source for the sympathetic cooling of molecules, are loaded in the trap by quenching them from a cloud of laser-cooled metastable argon atoms. Although the ground state atoms cannot be directly probed, we detect them by observing the collisional loss of co-trapped metastable argon atoms using a new type of parametric loss spectroscopy. Using this technique we als...

High-resolution compact Johann crystal spectrometer with the Livermore electron beam ion trap

International Nuclear Information System (INIS)

Robbins, D.L.; Chen, H.; Beiersdorfer, P.; Faenov, A.Ya.; Pikuz, T.A.; May, M.J.; Dunn, J.; Smith, A.J.

2004-01-01

A compact high-resolution (λ/Δλ≅10 000) spherically bent crystal spectrometer in the Johann geometry was recently installed and tested on the Lawrence Livermore National Laboratory SuperEBIT electron beam ion trap. The curvature of the mica (002) crystal grating allows for higher collection efficiency compared to the flat and cylindrically bent crystal spectrometers commonly used on the Livermore electron beam ion traps. The spectrometer's Johann configuration enables orientation of its dispersion plane to be parallel to the electron beam propagation. Used in concert with a crystal spectrometer, whose dispersion plane is perpendicular to the electron beam propagation, the polarization of x-ray emission lines can be measured

Unraveling surface and bulk trap states in lead halide perovskite solar cells using impedance spectroscopy

Science.gov (United States)

Han, Changfeng; Wang, Kai; Zhu, Xixiang; Yu, Haomiao; Sun, Xiaojuan; Yang, Qin; Hu, Bin

2018-03-01

Organic-inorganic hybrid perovskites (OIHPs) have been widely recognized as an excellent candidate for next-generation photovoltaic materials because of their highly efficient power conversion. Acquiring a complete understanding of trap states and dielectric properties in OIHP-based solar cells at the steady state is highly desirable in order to further explore and improve their optoelectronic functionalities and properties. We report CH3NH3PbI3-x Cl x -based planar solar cells with a power conversion efficiency (PCE) of 15.8%. The illumination intensity dependence of the current density-voltage (J-V) revealed the presence of trap-assisted recombination at low fluences. Non-destructive ac impedance spectroscopy (ac-IS) was applied to characterize the device at the steady state. The capacitance-voltage (C-V) spectra exhibited some distinct variations at a wide range of ac modulation frequencies with and without photo-excitations. Since the frequency-dependent chemical capacitance ({{C}μ }) is concerned with the surface and bulk related density of states (DOS) in CH3NH3PbI3-x Cl x , we verified this by fitting the corresponding DOS by a Gaussian distribution function. We ascertained that the electronic sub-gap trap states present in the solution processed CH3NH3PbI3-x Cl x and their distribution differs from the surface to the bulk. In fact, we demonstrated that both surfaces that were adjacent to the electron and hole transport layers featured analogous DOS. Despite this, photo- and bias-induced giant dielectric responses (i.e. both real and imaginary parts) were detected. A remarkable reduction of {{C}μ } at higher frequencies (i.e. more than 100 kHz) was ascribed to the effect of dielectric loss in CH3NH3PbI3-x Cl x .

Study of heliumlike neon using an electron beam ion trap

International Nuclear Information System (INIS)

Wargelin, B.J.; Kahn, S.M.; Beiersdorfer, P.

1992-01-01

The 2-to-1 spectra of several astrophysically abundant He-like ions are being studied using the Electron Beam Ion Trap (EBIT) at Lawrence Livermore National Laboratory. Spectra are recorded for a broad range of plasma parameters, including electron density, energy, and ionization balance. We describe the experimental equipment and procedure and present some typical data

Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

Energy Technology Data Exchange (ETDEWEB)

Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

2008-06-15

To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

Evaluating Origin of Electron Traps in Tris(8-hydroxyquinoline) Aluminum Thin Films using Thermally Stimulated Current Technique

OpenAIRE

Matsushima, Toshinori; Adachi, Chihaya

2008-01-01

We measured the energy distributions and concentrations of electron traps in O_2-unexposed and O_2-exposed tris(8-hydroxyquinoline) aluminum (Alq_3) films using a thermally stimulated current (TSC) technique to investigate how doping O_2 molecules in Alq_3 films affect the films' electron trap and electron transport characteristics. The results of our TSC studies revealed that Alq_3 films have an electron trap distribution with peak depths ranging from 0.075 to 0.1 eV and peak widths ranging ...

EBIT (Electron Beam Ion Trap), N-Division Experimental Physics. Annual report, 1994

International Nuclear Information System (INIS)

Schneider, D.

1995-10-01

The experimental groups in the Electron Beam Ion Trap (EBIT) program continue to perform front-line research with trapped and extracted highly charged ions (HCI) in the areas of ion/surface interactions, atomic spectroscopy, electron-ion interaction and structure measurements, highly charged ion confinement, and EBIT development studies. The ion surface/interaction studies which were initiated five years ago have reached a stage where they an carry out routine investigations, as well as produce breakthrough results towards the development of novel nanotechnology. At EBIT and SuperEBIT studies of the x-ray emission from trapped ions continue to produce significant atomic structure data with high precision for few electron systems of high-Z ions. Furthermore, diagnostics development for magnetic and laser fusion, supporting research for the x-ray laser and weapons programs, and laboratory astrophysics experiments in support of NASA's astrophysics program are a continuing effort. The two-electron contributions to the binding energy of helium like ions were measured for the first time. The results are significant because their precision is an order of magnitude better than those of competing measurements at accelerators, and the novel technique isolates the energy corrections that are the most interesting. The RETRAP project which was initiated three years ago has reached a stage where trapping, confining and electronic cooling of HCI ions up to Th 80+ can be performed routinely. Measurements of the rates and cross sections for electron transfer from H 2 performed to determine the lifetime of HCI up to Xe q+ and Th q+ (35 ≤ q ≤ 80) have been studied at mean energies estimated to be ∼ 5 q eV. This combination of heavy ions with very high charges and very low energies is rare in nature, but may be encountered in planned fusion energy demonstration devices, in highly charged ion sources, or in certain astrophysical events

Impact of Shock Front Rippling and Self-reformation on the Electron Dynamics at Low-Mach-number Shocks

Science.gov (United States)

Yang, Zhongwei; Lu, Quanming; Liu, Ying D.; Wang, Rui

2018-04-01

Electron dynamics at low-Mach-number collisionless shocks are investigated by using two-dimensional electromagnetic particle-in-cell simulations with various shock normal angles. We found: (1) The reflected ions and incident electrons at the shock front provide an effective mechanism for the quasi-electrostatic wave generation due to the charge-separation. A fraction of incident electrons can be effectively trapped and accelerated at the leading edge of the shock foot. (2) At quasi-perpendicular shocks, the electron trapping and reflection is nonuniform due to the shock rippling along the shock surface and is more likely to take place at some locations accompanied by intense reflected ion-beams. The electron trapping process has a periodical evolution over time due to the shock front self-reformation, which is controlled by ion dynamics. Thus, this is a cross-scale coupling phenomenon. (3) At quasi-parallel shocks, reflected ions can travel far back upstream. Consequently, quasi-electrostatic waves can be excited in the shock transition and the foreshock region. The electron trajectory analysis shows these waves can trap electrons at the foot region and reflect a fraction of them far back upstream. Simulation runs in this paper indicate that the micro-turbulence at the shock foot can provide a possible scenario for producing the reflected electron beam, which is a basic condition for the type II radio burst emission at low-Mach-number interplanetary shocks driven by Coronal Mass Ejections (CMEs).

Discovery of deep and shallow trap states from step structures of rutile TiO2 vicinal surfaces by second harmonic and sum frequency generation spectroscopy

International Nuclear Information System (INIS)

Takahashi, Hiroaki; Watanabe, Ryosuke; Miyauchi, Yoshihiro; Mizutani, Goro

2011-01-01

In this report, local electronic structures of steps and terraces on rutile TiO 2 single crystal faces were studied by second harmonic and sum frequency generation (SHG/SFG) spectroscopy. We attained selective measurement of the local electronic states of the step bunches formed on the vicinal (17 18 1) and (15 13 0) surfaces using a recently developed step-selective probing technique. The electronic structures of the flat (110)-(1x1) (the terrace face of the vicinal surfaces) and (011)-(2x1) surfaces were also discussed. The SHG/SFG spectra showed that step structures are mainly responsible for the formation of trap states, since significant resonances from the trap states were observed only from the vicinal surfaces. We detected deep hole trap (DHT) states and shallow electron trap (SET) states selectively from the step bunches on the vicinal surfaces. Detailed analysis of the SHG/SFG spectra showed that the DHT and SET states are more likely to be induced at the top edges of the step bunches than on their hillsides. Unlike the SET states, the DHT states were observed only at the step bunches parallel to [1 1 1][equivalent to the step bunches formed on the (17 18 1) surface]. Photocatalytic activity for each TiO 2 sample was also measured through methylene blue photodegradation reactions and was found to follow the sequence: (110) < (17 18 1) < (15 13 0) < (011), indicating that steps along [0 0 1] are more reactive than steps along [1 1 1]. This result implies that the presence of the DHT states observed from the step bunches parallel to [1 1 1] did not effectively contribute to the methylene blue photodegradation reactions.

Trapped Electron Instability of Electron Plasma Waves: Vlasov simulations and theory

Science.gov (United States)

Berger, Richard; Chapman, Thomas; Brunner, Stephan

2013-10-01

The growth of sidebands of a large-amplitude electron plasma wave is studied with Vlasov simulations for a range of amplitudes (. 001 vph = +/-ωbe , where vph =ω0 /k0 and ωbe is the bounce frequency of a deeply trapped electron. In 2D simulations, we find that the instability persists and co-exists with the filamentation instability. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344 and funded by the Laboratory Research and Development Program at LLNL under project tracking code 12-ERD.

Experimental demonstration and visual observation of dust trapping in an electron storage ring

Directory of Open Access Journals (Sweden)

Yasunori Tanimoto

2009-11-01

Full Text Available Sudden decreases in the beam lifetime, which are attributed to the dust trappings, sometimes occur at the electron storage ring Photon Factory Advanced Ring (PF-AR. Since these dust events cause difficulties in user operations, we have been carefully observing this phenomenon for many years. Our observations indicated that the dust trappings could be caused by electric discharges in vacuum ducts. In order to demonstrate this hypothesis experimentally, we designed a new vacuum device that intentionally generates electric discharges and installed it in PF-AR. Using this device, we could repeatedly induce sudden decreases in the beam lifetime because of the generated electric discharge. We also detected decreases in the beam lifetime caused by mechanical movement of the electrodes in the device. Moreover, we could visually observe the dust trapping phenomenon; the trapped dust particle was observed by two video cameras and appeared as a luminous body that resembled a shooting star. This was the first direct observation of a luminous dust particle trapped by the electron beam.

Natural variations in the geomagnetically trapped electron population

Science.gov (United States)

Vampola, A. L.

1972-01-01

Temporal variations in the trapped natural electron flux intensities and energy spectra are discussed and demonstrated using recent satellite data. These data are intended to acquaint the space systems engineer with the types of natural variations that may be encountered during a mission and to augment the models of the electron environment currently being used in space system design and orbit selection. An understanding of the temporal variations which may be encountered should prove helpful. Some of the variations demonstrated here which are not widely known include: (1) addition of very energetic electrons to the outer zone during moderate magnetic storms: (2) addition of energetic electrons to the inner zone during major magnetic storms; (3) inversions in the outer zone electron energy spectrum during the decay phase of a storm injection event and (4) occasional formation of multiple maxima in the flux vs altitude profile of moderately energetic electrons.

Spectroscopy of highly charged tungsten ions with Electron Beam Ion Traps

International Nuclear Information System (INIS)

Sakaue, Hiroyuki A.; Kato, Daiji; Morita, Shigeru; Murakami, Izumi; Yamamoto, Norimasa; Ohashi, Hayato; Yatsurugi, Junji; Nakamura, Nobuyuki

2013-01-01

We present spectra of highly charged tungsten ions in the extreme ultra-violet (EUV) by using electron beam ion traps. The electron energy dependence of spectra is investigated of electron energies from 490 to 1440 eV. Previously unreported lines are presented in the EUV range, and some of them are identified by comparing the wavelengths with theoretical calculations. (author)

A high-energy electron beam ion trap for production of high-charge high-Z ions

International Nuclear Information System (INIS)

Knapp, D.A.; Marrs, R.E.; Elliott, S.R.; Magee, E.W.; Zasadzinski, R.

1993-01-01

We have developed a new high-energy electron beam ion trap, the first laboratory source of low-energy, few-electron, high-Z ions. We describe the device and report measurements of its performance, including the electron beam diameter, current density and energy, and measurements of the ionization balance for several high-Z elements in the trap. This device opens up a wide range of possible experiments in atomic physics, plasma physics, and nuclear physics. (orig.)

Origin of the main deep electron trap in electron irradiated InP

International Nuclear Information System (INIS)

Sibille, A.

1986-01-01

The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p + n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P)

Tunnelling Dynamics of Bose—Einstein Condensates in a Five-Well Trap

International Nuclear Information System (INIS)

Ai-Xia, Zhang; Shi-Ling, Tian; Rong-An, Tang; Ju-Kui, Xue

2008-01-01

We develop a five-well model for describing the tunnelling dynamics of Bose-Einstein condensates (BECs) trapped in 2D optical lattices. The tunnelling dynamics of BECs in this five-well model are investigated both analytically and numerically. We focus on the self-trapped states and the difference of the tunnelling dynamics among two-well, three-well and five-well systems. The criterions for the self-trapped states and the phase diagrams of the five trapped BECs in zero-phase mode and π-phase mode are obtained. We find that the criterions and the phase diagrams are largely modified by the dimension of the system and the phase difference between wells. The five-well model is a good model and can give us an insight into the tunnelling dynamics of BECs trapped in 2D optical lattices

Geometry and electronic structure of an impurity-trapped exciton in the Cs2GeF6 crystal doped with U4+. The 5f17s1 manifold

International Nuclear Information System (INIS)

Ordejon, B.; Seijo, L.; Barandiaran, Z.

2007-01-01

Complete text of publication follows: Excitons trapped at impurity centres in highly ionic crystals were first described by McClure and Pedrini [Phys. Rev. B 32, 8465 (1985)] as excited states consisting of a bound electron-hole pair with the hole localized on the impurity and the electron on nearby lattice sites, and a very short impurity-ligand bond length. In this work we present a detailed microscopic characterization of an impurity - trapped exciton in Cs 2 GeF 6 doped with U 4+ . Its electronic structure has been studied by means of CASSCF/CASPT2/SOCI relativistic ab initio model potential (AIMP) embedded-cluster calculations on (UF 6 ) 2- and (UF 6 Cs 8 ) 6+ clusters embedded in Cs 2 GeF 6 . The local geometry of the impurity-trapped exciton, the potential energy curves, and the multi electronic wavefunctions, have been obtained as direct, non-empirical results of the methods. The calculated excited states appear to be significantly delocalized outside the UF 6 volume and their U-F bond length turns out to be very short, closer to that of a pentavalent uranium defect than to that of a tetravalent uranium defect. The wavefunctions of these excited states show a dominant U 5f 1 7s 1 configuration character. This result has never been anticipated by simpler models and reveals the unprecedented ability of diffuse orbitals of f-element impurities to act as electron traps in ionic crystals

The influence of isomer purity on trap states and performance of organic thin-film transistors.

Science.gov (United States)

Diemer, Peter J; Hayes, Jacori; Welchman, Evan; Hallani, Rawad; Pookpanratana, Sujitra J; Hacker, Christina A; Richter, Curt A; Anthony, John E; Thonhauser, Timo; Jurchescu, Oana D

2017-01-01

Organic field-effect transistor (OFET) performance is dictated by its composition and geometry, as well as the quality of the organic semiconductor (OSC) film, which strongly depends on purity and microstructure. When present, impurities and defects give rise to trap states in the bandgap of the OSC, lowering device performance. Here, 2,8-difluoro-5,11-bis(triethylsilylethynyl)-anthradithiophene is used as a model system to study the mechanism responsible for performance degradation in OFETs due to isomer coexistence. The density of trapping states is evaluated through temperature dependent current-voltage measurements, and it is discovered that OFETs containing a mixture of syn - and anti -isomers exhibit a discrete trapping state detected as a peak located at ~ 0.4 eV above the valence-band edge, which is absent in the samples fabricated on single-isomer films. Ultraviolet photoelectron spectroscopy measurements and density functional theory calculations do not point to a significant difference in electronic band structure between individual isomers. Instead, it is proposed that the dipole moment of the syn -isomer present in the host crystal of the anti -isomer locally polarizes the neighboring molecules, inducing energetic disorder. The isomers can be separated by applying gentle mechanical vibrations during film crystallization, as confirmed by the suppression of the peak and improvement in device performance.

Matrix-product-state method with local basis optimization for nonequilibrium electron-phonon systems

Science.gov (United States)

Heidrich-Meisner, Fabian; Brockt, Christoph; Dorfner, Florian; Vidmar, Lev; Jeckelmann, Eric

We present a method for simulating the time evolution of quasi-one-dimensional correlated systems with strongly fluctuating bosonic degrees of freedom (e.g., phonons) using matrix product states. For this purpose we combine the time-evolving block decimation (TEBD) algorithm with a local basis optimization (LBO) approach. We discuss the performance of our approach in comparison to TEBD with a bare boson basis, exact diagonalization, and diagonalization in a limited functional space. TEBD with LBO can reduce the computational cost by orders of magnitude when boson fluctuations are large and thus it allows one to investigate problems that are out of reach of other approaches. First, we test our method on the non-equilibrium dynamics of a Holstein polaron and show that it allows us to study the regime of strong electron-phonon coupling. Second, the method is applied to the scattering of an electronic wave packet off a region with electron-phonon coupling. Our study reveals a rich physics including transient self-trapping and dissipation. Supported by Deutsche Forschungsgemeinschaft (DFG) via FOR 1807.

Oxidative trends of TiO₂—hole trapping at anatase and rutile surfaces

DEFF Research Database (Denmark)

Zawadzki, Pawel; Laursen, Anders B.; Jacobsen, Karsten Wedel

2012-01-01

Understanding the nature of photogenerated carriers in a photocatalyst is central to understanding its photocatalytic performance. Based on density functional theory calculation we show that for TiO2, the most popular photo-catalyst, the electron hole self-trapping leads to band gap states which...... position is dependent on the type of surface termination. Such variations in hole state energies can lead to differences in photocatalytic activity among rutile and anatase surface facets. We find that the calculated hole state energies correlate with photo-deposition and photo-etching rates. We...

EBIT (Electron Beam Ion Trap), N-Division Experimental Physics. Annual report, 1994

Energy Technology Data Exchange (ETDEWEB)

Schneider, D. [ed.

1995-10-01

The experimental groups in the Electron Beam Ion Trap (EBIT) program continue to perform front-line research with trapped and extracted highly charged ions (HCI) in the areas of ion/surface interactions, atomic spectroscopy, electron-ion interaction and structure measurements, highly charged ion confinement, and EBIT development studies. The ion surface/interaction studies which were initiated five years ago have reached a stage where they an carry out routine investigations, as well as produce breakthrough results towards the development of novel nanotechnology. At EBIT and SuperEBIT studies of the x-ray emission from trapped ions continue to produce significant atomic structure data with high precision for few electron systems of high-Z ions. Furthermore, diagnostics development for magnetic and laser fusion, supporting research for the x-ray laser and weapons programs, and laboratory astrophysics experiments in support of NASA`s astrophysics program are a continuing effort. The two-electron contributions to the binding energy of helium like ions were measured for the first time. The results are significant because their precision is an order of magnitude better than those of competing measurements at accelerators, and the novel technique isolates the energy corrections that are the most interesting. The RETRAP project which was initiated three years ago has reached a stage where trapping, confining and electronic cooling of HCI ions up to Th{sup 80+} can be performed routinely. Measurements of the rates and cross sections for electron transfer from H{sub 2} performed to determine the lifetime of HCI up to Xe{sup q+} and Th{sup q+} (35 {le} q {le} 80) have been studied at mean energies estimated to be {approximately} 5 q eV. This combination of heavy ions with very high charges and very low energies is rare in nature, but may be encountered in planned fusion energy demonstration devices, in highly charged ion sources, or in certain astrophysical events.

Quantum versus semiclassical description of self-trapping: Anharmonic effects

International Nuclear Information System (INIS)

Raghavan, S.; Bishop, A.R.; Kenkre, V.M.

1999-01-01

Self-trapping has been traditionally studied on the assumption that quasiparticles interact with harmonic phonons and that this interaction is linear in the displacement of the phonon. To complement recent semiclassical studies of anharmonicity and nonlinearity in this context, we present below a fully quantum-mechanical analysis of a two-site system, where the oscillator is described by a tunably anharmonic potential, with a square well with infinite walls and the harmonic potential as its extreme limits, and wherein the interaction is nonlinear in the oscillator displacement. We find that even highly anharmonic polarons behave similar to their harmonic counterparts in that self-trapping is preserved for long times in the limit of strong coupling, and that the polaronic tunneling time scale depends exponentially on the polaron binding energy. Further, in agreement, with earlier results related to harmonic polarons, the semiclassical approximation agrees with the full quantum result in the massive oscillator limit of small oscillator frequency and strong quasiparticle-oscillator coupling. copyright 1999 The American Physical Society

Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

International Nuclear Information System (INIS)

Tokuda, Yutaka; Shimada, Hitoshi

1998-01-01

Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

NH2- in a cold ion trap with He buffer gas: Ab initio quantum modeling of the interaction potential and of state-changing multichannel dynamics

Science.gov (United States)

Hernández Vera, Mario; Yurtsever, Ersin; Wester, Roland; Gianturco, Franco A.

2018-05-01

We present an extensive range of accurate ab initio calculations, which map in detail the spatial electronic potential energy surface that describes the interaction between the molecular anion NH2 - (1A1) in its ground electronic state and the He atom. The time-independent close-coupling method is employed to generate the corresponding rotationally inelastic cross sections, and then the state-changing rates over a range of temperatures from 10 to 30 K, which is expected to realistically represent the experimental trapping conditions for this ion in a radio frequency ion trap filled with helium buffer gas. The overall evolutionary kinetics of the rotational level population involving the molecular anion in the cold trap is also modelled during a photodetachment experiment and analyzed using the computed rates. The present results clearly indicate the possibility of selectively detecting differences in behavior between the ortho- and para-anions undergoing photodetachment in the trap.

Measurement of few-electron uranium ions on a high-energy electron beam ion trap

International Nuclear Information System (INIS)

Beiersdorfer, P.

1994-01-01

The high-energy electron beam ion trap, dubbed Super-EBIT, was used to produce, trap, and excite uranium ions as highly charged as fully stripped U 92+ . The production of such highly charged ions was indicated by the x-ray emission observed with high-purity Ge detectors. Moreover, high-resolution Bragg crystal spectromters were used to analyze the x-ray emission, including a detailed measurement of both the 2s 1/2 -2p 3/2 electric dipole and 2p 1/2 -2p 3/2 magnetic dipole transitions. Unlike in ion accelerators, where the uranium ions move at relativistic speeds, the ions in this trap are stationary. Thus very precise measurements of the transition energies could be made, and the QED contribution to the transition energies could be measured within less than 1 %. Details of the production of these highly charged ions and their measurement is given

Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Shen, Xiao, E-mail: xiao.shen@vanderbilt.edu [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States); Pantelides, Sokrates T. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2015-04-06

MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

EUV spectrum of highly charged tungsten ions in electron beam ion trap

International Nuclear Information System (INIS)

Sakaue, H.A.; Kato, D.; Murakami, I.; Nakamura, N.

2016-01-01

We present spectra of highly charged tungsten ions in the extreme ultra-violet (EUV) by using electron beam ion traps. The electron energy dependence of spectra was investigated for electron energy from 540 to 1370 eV. Previously unreported lines were presented in the EUV range, and comparing the wavelengths with theoretical calculations identified them. (author)

Thermal and optical excitation of trapped electrons in high-density polyethylene (HDPE) studied through positron annihilation

International Nuclear Information System (INIS)

Nahid, F.; Zhang, J.D.; Yu, T.F.; Ling, C.C.; Fung, S.; Beling, C.D.

2011-01-01

Positronium (Ps) formation in high-density polyethylene (HDPE) has been studied below the glass transition temperature. The formation probability increases with positron irradiation time due to an increasing number of inter-track trapped electrons becoming available for positron capture. The temperature variation of the saturated Ps level is discussed in different models. The quenching of trapped electrons by light has been studied and the optical de-trapping cross-section for different photon energies has been estimated over the visible region.

Femtosecond study of self-trapped vibrational excitons in crystalline acetanilide

DEFF Research Database (Denmark)

Edler, J.; Hamm, Peter; Scott, Alwyn C.

2002-01-01

Femtosecond IR spectroscopy of delocalized NH excitations of crystalline acetanilide confirms that self-trapping in hydrogen-bonded peptide units exists and does stabilize the excitation. Two phonons with frequencies of 48 and 76 cm(-1) are identified as the major degrees of freedom that mediate...

Photoluminescence, trap states and thermoluminescence decay ...

Indian Academy of Sciences (India)

Administrator

Photoluminescence, trap states and thermoluminescence decay process study of Ca2MgSi2O7 : Eu. 2+. , Dy. 3+ phosphor. RAVI SHRIVASTAVA*, JAGJEET KAUR, VIKAS DUBEY and BEENA JAYKUMAR. Govt. VYT PG Autonomous College, Durg 491 001, (C.G.) India. MS received 9 July 2013; revised 5 December 2013.

Symplectic tomography of nonclassical states of trapped ion

International Nuclear Information System (INIS)

Man'ko, O.

1996-03-01

The marginal distribution for two types of nonclassical states of trapped ion - for squeezed and correlated states and for squeezed even and odd coherent states (squeezed Schroedinger cat states) is studied. The obtained marginal distribution for the two types of states is shown to satisfy classical dynamical equation equivalent to standard quantum evolution equation for density matrix (wave function) derived in symplectic tomography scheme. (author). 20 refs

Hydrogen in trapping states innocuous to environmental degradation of high-strength steels

International Nuclear Information System (INIS)

Takai, Kenichi

2003-01-01

Hydrogen in trapping states innocuous to environmental degradation of the mechanical properties of high-strength steels has been separated and extracted using thermal desorption analysis (TDA) and slow strain rate test (SSRT). The high-strength steel occluding only hydrogen desorbed at low temperature (peak 1), as determined by TDA, decreases in maximum stress and plastic elongation with increasing occlusion time of peak 1 hydrogen. Thus the trapping state of peak 1 hydrogen is directly associated with environmental degradation. The trap activation energy for peak 1 hydrogen is 23.4 kJ/mol, so the peak 1 hydrogen corresponds to weaker binding states and diffusible states at room temperature. In contrast, the high-strength steel occluding only hydrogen desorbed at high temperature (peak 2), by TDA, maintains the maximum stress and plastic elongation in spite of an increasing content of peak 2 hydrogen. This result indicates that the peak 2 hydrogen trapping state is innocuous to environmental degradation, even though the steel occludes a large amount of peak 2 hydrogen. The trap activation energy for peak 2 hydrogen is 65.0 kJ/mol, which indicates a stronger binding state and nondiffusibility at room temperature. The trap activation energy for peak 2 hydrogen suggests that the driving force energy required for stress-induced, diffusion during elastic and plastic deformation, and the energy required for hydrogen dragging by dislocation mobility during plastic deformation are lower than the binding energy between hydrogen and trapping sites. The peak 2 hydrogen, therefore, is believed to not accumulate in front of the crack tip and to not cause environmental degradation in spite of being present in amounts as high as 2.9 mass ppm. (author)

Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Bhat, Sathyanarayana, E-mail: asharao76@gmail.com; Rao, Asha, E-mail: asharao76@gmail.com [Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India); Krishnan, Sheeja [Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India); Sanjeev, Ganesh [Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India); Suresh, E. P. [Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)

2014-04-24

The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.

Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells

Energy Technology Data Exchange (ETDEWEB)

Li, Tian, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu; Dagenais, Mario, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu [Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742 (United States); Lu, Haofeng; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)

2015-02-02

Reduced quantum dot (QD) absorption due to state filling effects and enhanced electron transport in doped QDs are demonstrated to play a key role in solar energy conversion. Reduced QD state absorption with increased n-doping is observed in the self-assembled In{sub 0.5}Ga{sub 0.5}As/GaAs QDs from high resolution below-bandgap external quantum efficiency (EQE) measurement, which is a direct consequence of the Pauli exclusion principle. We also show that besides partial filling of the quantum states, electron-doping produces negatively charged QDs that exert a repulsive Coulomb force on the mobile electrons, thus altering the electron trajectory and reducing the probability of electron capture, leading to an improved collection efficiency of photo-generated carriers, as indicated by an absolute above-bandgap EQE measurement. The resulting redistribution of the mobile electron in the planar direction is further validated by the observed photoluminescence intensity dependence on doping.

Effect of trapped electrons on the transient current density and luminance of organic light-emitting diode

Science.gov (United States)

Lee, Jiun-Haw; Chen, Chia-Hsun; Lin, Bo-Yen; Shih, Yen-Chen; Lin, King-Fu; Wang, Leeyih; Chiu, Tien-Lung; Lin, Chi-Feng

2018-04-01

Transient current density and luminance from an organic light-emitting diode (OLED) driven by voltage pulses were investigated. Waveforms with different repetition rate, duty cycle, off-period, and on-period were used to study the injection and transport characteristics of electron and holes in an OLED under pulse operation. It was found that trapped electrons inside the emitting layer (EML) and the electron transporting layer (ETL) material, tris(8-hydroxyquinolate)aluminum (Alq3) helped for attracting the holes into the EML/ETL and reducing the driving voltage, which was further confirmed from the analysis of capacitance-voltage and displacement current measurement. The relaxation time and trapped filling time of the trapped electrons in Alq3 layer were ~200 µs and ~600 µs with 6 V pulse operation, respectively.

The Electronic McPhail Trap

Science.gov (United States)

Potamitis, Ilyas; Rigakis, Iraklis; Fysarakis, Konstantinos

2014-01-01

Certain insects affect cultivations in a detrimental way. A notable case is the olive fruit fly (Bactrocera oleae (Rossi)), that in Europe alone causes billions of euros in crop-loss/per year. Pests can be controlled with aerial and ground bait pesticide sprays, the efficiency of which depends on knowing the time and location of insect infestations as early as possible. The inspection of traps is currently carried out manually. Automatic monitoring traps can enhance efficient monitoring of flying pests by identifying and counting targeted pests as they enter the trap. This work deals with the hardware setup of an insect trap with an embedded optoelectronic sensor that automatically records insects as they fly in the trap. The sensor responsible for detecting the insect is an array of phototransistors receiving light from an infrared LED. The wing-beat recording is based on the interruption of the emitted light due to the partial occlusion from insect's wings as they fly in the trap. We show that the recordings are of high quality paving the way for automatic recognition and transmission of insect detections from the field to a smartphone. This work emphasizes the hardware implementation of the sensor and the detection/counting module giving all necessary implementation details needed to construct it. PMID:25429412

Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

1998-02-01

Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

Ab initio study of He-He interactions in homogeneous electron gas

Energy Technology Data Exchange (ETDEWEB)

Wang, Jinlong; Niu, Liang-Liang; Zhang, Ying, E-mail: zhyi@buaa.edu.cn

2017-02-15

Highlights: • Helium atoms interact via the He induced Friedel oscillations of electron densities. • He-He global binding energy minimum of ∼−0.09 eV is reached at an optimal electron density of 0.04 e/Å{sup 3}, corresponding to an optimal He-He separation of ∼1.7 Å. • The present results can qualitatively interpret the well-known He self-trapping behavior in metals. - Abstract: We have investigated the immersion energy of a single He and the He-He interactions in homogeneous electron gas using ab initio calculations. It is found that He dislikes electrons and He-He interact via the He induced Friedel oscillations of electron densities. A critical electron density at which the global binding energy extremum shifts from the first minimum to the second one is identified. We also discover that the He-He global binding energy minimum of ∼−0.09 eV is reached at an optimal electron density of 0.04 e/Å{sup 3}, corresponding to an optimal He-He separation of ∼1.7 Å. Further, the He atoms are found to gain a trivial amount of 2s and 2p states from the free electrons, inducing a hybridization between the He s- and p-states. The present results can qualitatively interpret the well-known He self-trapping behavior in metals.

Self-driven particles in linear flows and trapped in a harmonic potential

Science.gov (United States)

Sandoval, Mario; Hidalgo-Gonzalez, Julio C.; Jimenez-Aquino, Jose I.

2018-03-01

We present analytical expressions for the mean-square displacement of self-driven particles in general linear flows and trapped in a harmonic potential. The general expressions are applied to three types of linear flows, namely, shear flow, solid-body rotation flow, and extensional flow. By using Brownian dynamics simulations, the effect of trapping and external linear flows on the particles' distribution is also elucidated. These simulations also enabled us to validate our theoretical results.

Bifurcation analysis for ion acoustic waves in a strongly coupled plasma including trapped electrons

Science.gov (United States)

El-Labany, S. K.; El-Taibany, W. F.; Atteya, A.

2018-02-01

The nonlinear ion acoustic wave propagation in a strongly coupled plasma composed of ions and trapped electrons has been investigated. The reductive perturbation method is employed to derive a modified Korteweg-de Vries-Burgers (mKdV-Burgers) equation. To solve this equation in case of dissipative system, the tangent hyperbolic method is used, and a shock wave solution is obtained. Numerical investigations show that, the ion acoustic waves are significantly modified by the effect of polarization force, the trapped electrons and the viscosity coefficients. Applying the bifurcation theory to the dynamical system of the derived mKdV-Burgers equation, the phase portraits of the traveling wave solutions of both of dissipative and non-dissipative systems are analyzed. The present results could be helpful for a better understanding of the waves nonlinear propagation in a strongly coupled plasma, which can be produced by photoionizing laser-cooled and trapped electrons [1], and also in neutron stars or white dwarfs interior.

Observation of Hyperfine Transitions in Trapped Ground-State Antihydrogen

CERN Document Server

Olin, Arthur

2015-01-01

This paper discusses the first observation of stimulated magnetic resonance transitions between the hyperfine levels of trapped ground state atomic antihydrogen, confirming its presence in the ALPHA apparatus. Our observations show that these transitions are consistent with the values in hydrogen to within 4~parts~in~$10^3$. Simulations of the trapped antiatoms in a microwave field are consistent with our measurements.

Observation of hyperfine transitions in trapped ground-state antihydrogen

Energy Technology Data Exchange (ETDEWEB)

Collaboration: A. Olin for the ALPHA Collaboration

2015-08-15

This paper discusses the first observation of stimulated magnetic resonance transitions between the hyperfine levels of trapped ground state atomic antihydrogen, confirming its presence in the ALPHA apparatus. Our observations show that these transitions are consistent with the values in hydrogen to within 4 parts in 10{sup 3}. Simulations of the trapped antiatoms in a microwave field are consistent with our measurements.

All-electron ab initio investigations of the electronic states of the NiC molecule

DEFF Research Database (Denmark)

Shim, Irene; Gingerich, Karl. A.

1999-01-01

The low-lying electronic states of NiC are investigated by all-electron ab initio multi-configuration self-consistent-field (CASSCF) calculations including relativistic corrections. The electronic structure of NiC is interpreted as perturbed antiferromagnetic couplings of the localized angular...

Molecular dynamics simulation of electron trapping in the sapphire lattice

International Nuclear Information System (INIS)

Rambaut, C.; Oh, K.H.; Fayeulle, S.; Kohanoff, J.

1995-10-01

Energy storage and release in dielectric materials can be described on the basis of the charge trapping mechanism. Most phenomenological aspects have been recently rationalized in terms of the space charge mode. Dynamical aspects are studied here by performing Molecular Dynamics simulations. We show that an excess electron introduced into the sapphire lattice (α -Al 2 O 3 ) can be trapped only at a limited number of sites. The energy gained by allowing the electron to localize in these sites is of the order of 4-5 eV, in good agreement with the results of the space charge model. Displacements of the neighboring ions due to the implanted charge are shown to be localized in a small region of about 5 A. Detrapping is observed at 250 K. The ionic displacements turn out to play an important role in modifying the potential landscape by lowering, in a dynamical way, the barriers that cause localization at low temperature. (author). 18 refs, 7 figs, 2 tabs

Coupled ion temperature gradient and trapped electron mode to electron temperature gradient mode gyrokinetic simulations

International Nuclear Information System (INIS)

Waltz, R. E.; Candy, J.; Fahey, M.

2007-01-01

Electron temperature gradient (ETG) transport is conventionally defined as the electron energy transport at high wave number (high-k) where ions are adiabatic and there can be no ion energy or plasma transport. Previous gyrokinetic simulations have assumed adiabatic ions (ETG-ai) and work on the small electron gyroradius scale. However such ETG-ai simulations with trapped electrons often do not have well behaved nonlinear saturation unless fully kinetic ions (ki) and proper ion scale zonal flow modes are included. Electron energy transport is separated into ETG-ki at high-k and ion temperature gradient-trapped electron mode (ITG/TEM) at low-k. Expensive (more computer-intensive), high-resolution, large-ion-scale flux-tube simulations coupling ITG/TEM and ETG-ki turbulence are presented. These require a high effective Reynolds number R≡[k(max)/k(min)] 2 =μ 2 , where μ=[ρ si /ρ si ] is the ratio of ion to electron gyroradii. Compute times scale faster than μ 3 . By comparing the coupled expensive simulations with (1) much cheaper (less compute-intensive), uncoupled, high-resolution, small, flux-tube ETG-ki and with (2) uncoupled low-resolution, large, flux-tube ITG/TEM simulations, and also by artificially turning ''off'' the low-k or high-k drives, it appears that ITG/TEM and ETG-ki transport are not strongly coupled so long as ETG-ki can access some nonadiabatic ion scale zonal flows and both high-k and low-k are linearly unstable. However expensive coupled simulations are required for physically accurate k-spectra of the transport and turbulence. Simulations with μ≥30 appear to represent the physical range μ>40. ETG-ki transport measured in ion gyro-Bohm units is weakly dependent on μ. For the mid-radius core tokamak plasma parameters studied, ETG-ki is about 10% of the electron energy transport, which in turn is about 30% of the total energy transport (with negligible ExB shear). However at large ExB shear sufficient to quench the low-k ITG

Theoretical study of the electronic structure of different states of the KRb+ molecular ion

International Nuclear Information System (INIS)

Korek, M.; Younis, G.

2000-01-01

Full text.The molecular activities in ultra-cold alkali atom trapping stimulate theoretical developments to compute relevant adiabatic potential curves, especially in the framework of the pseudopotential methods. For these methods the molecular ion KRb+ is treated as system with one active electron moving in a field of two ionic cores, where core valence electron interactions are presented by an effective potential. Potential energies have been calculated over a wide range of internuclear distance (5.0-60a o ) for the lowest states of symmetry 2 Σ, 2 Π, 2 Δ and Ω for the molecular ion KRb+. To avoid an over estimation of the dissociation energy the perturbative treatment is replaced by an l-dependent core-polarization potential of the Foucrault et al. For the one valence electron of the two considered atoms, we recalculated the polarization potential cut-off parameters r k l , and r R b l by taking l=0,1,2 and r i 2 =r i 3 . Molecular orbital for the molecular ion KRb+ were derived from Self Consistent Field calculations (SCF), and full valence Configuration Interaction (IC) calculations were performed. Extensive tables of energy values versus internuclear distance are displayed and molecular spectroscopic constants have been derived, for the first time, for the bound states with regular shape

The Electronic McPhail Trap

Directory of Open Access Journals (Sweden)

Ilyas Potamitis

2014-11-01

Full Text Available Certain insects affect cultivations in a detrimental way. A notable case is the olive fruit fly (Bactrocera oleae (Rossi, that in Europe alone causes billions of euros in crop-loss/per year. Pests can be controlled with aerial and ground bait pesticide sprays, the efficiency of which depends on knowing the time and location of insect infestations as early as possible. The inspection of traps is currently carried out manually. Automatic monitoring traps can enhance efficient monitoring of flying pests by identifying and counting targeted pests as they enter the trap. This work deals with the hardware setup of an insect trap with an embedded optoelectronic sensor that automatically records insects as they fly in the trap. The sensor responsible for detecting the insect is an array of phototransistors receiving light from an infrared LED. The wing-beat recording is based on the interruption of the emitted light due to the partial occlusion from insect’s wings as they fly in the trap. We show that the recordings are of high quality paving the way for automatic recognition and transmission of insect detections from the field to a smartphone. This work emphasizes the hardware implementation of the sensor and the detection/counting module giving all necessary implementation details needed to construct it.

A tunable electron beam source using trapping of electrons in a density down-ramp in laser wakefield acceleration.

Science.gov (United States)

Ekerfelt, Henrik; Hansson, Martin; Gallardo González, Isabel; Davoine, Xavier; Lundh, Olle

2017-09-25

One challenge in the development of laser wakefield accelerators is to demonstrate sufficient control and reproducibility of the parameters of the generated bunches of accelerated electrons. Here we report on a numerical study, where we demonstrate that trapping using density down-ramps allows for tuning of several electron bunch parameters by varying the properties of the density down-ramp. We show that the electron bunch length is determined by the difference in density before and after the ramp. Furthermore, the transverse emittance of the bunch is controlled by the steepness of the ramp. Finally, the amount of trapped charge depends both on the density difference and on the steepness of the ramp. We emphasize that both parameters of the density ramp are feasible to vary experimentally. We therefore conclude that this tunable electron accelerator makes it suitable for a wide range of applications, from those requiring short pulse length and low emittance, such as the free-electron lasers, to those requiring high-charge, large-emittance bunches to maximize betatron X-ray generation.

All electron ab initio investigations of the electronic states of the FeC molecule

DEFF Research Database (Denmark)

Shim, Irene; Gingerich, Karl A.

1999-01-01

The low lying electronic states of the molecule FeC have been investigated by performing all electron ab initio multi-configuration self-consistent-field (CASSCF) and multi reference configuration interaction (MRCI) calculations. The relativistic corrections for the one electron Darwin contact term...

All Electron ab initio Investigations of the Electronic States of the MoN Molecule

DEFF Research Database (Denmark)

Shim, Irene; Gingerich, Karl A.

1999-01-01

The low lying electronic states of the molecule MoN have been investigated by performing all electron ab initio multi-configuration self-consistent-field (CASSCF) calculations. The relativistic corrections for the one electron Darwin contact term and the relativistic mass-velocity correction have...

Mixed-valence molecular four-dot unit for quantum cellular automata: Vibronic self-trapping and cell-cell response.

Science.gov (United States)

Tsukerblat, Boris; Palii, Andrew; Clemente-Juan, Juan Modesto; Coronado, Eugenio

2015-10-07

Our interest in this article is prompted by the vibronic problem of charge polarized states in the four-dot molecular quantum cellular automata (mQCA), a paradigm for nanoelectronics, in which binary information is encoded in charge configuration of the mQCA cell. Here, we report the evaluation of the electronic levels and adiabatic potentials of mixed-valence (MV) tetra-ruthenium (2Ru(ii) + 2Ru(iii)) derivatives (assembled as two coupled Creutz-Taube complexes) for which molecular implementations of quantum cellular automata (QCA) was proposed. The cell based on this molecule includes two holes shared among four spinless sites and correspondingly we employ the model which takes into account the two relevant electron transfer processes (through the side and through the diagonal of the square) as well as the difference in Coulomb energies for different instant positions of localization of the hole pair. The combined Jahn-Teller (JT) and pseudo JT vibronic coupling is treated within the conventional Piepho-Krauzs-Schatz model adapted to a bi-electronic MV species with the square-planar topology. The adiabatic potentials are evaluated for the low lying Coulomb levels in which the antipodal sites are occupied, the case just actual for utilization in mQCA. The conditions for the vibronic self-trapping in spin-singlet and spin-triplet states are revealed in terms of the two actual transfer pathways parameters and the strength of the vibronic coupling. Spin related effects in degrees of the localization which are found for spin-singlet and spin-triplet states are discussed. The polarization of the cell is evaluated and we demonstrate how the partial delocalization caused by the joint action of the vibronic coupling and electron transfer processes influences polarization of a four-dot cell. The results obtained within the adiabatic approach are compared with those based on the numerical solution of the dynamic vibronic problem. Finally, the Coulomb interaction between

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Science.gov (United States)

Arehart, A. R.; Sasikumar, A.; Rajan, S.; Via, G. D.; Poling, B.; Winningham, B.; Heller, E. R.; Brown, D.; Pei, Y.; Recht, F.; Mishra, U. K.; Ringel, S. A.

2013-02-01

This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) through increased concentration of a specific electron trap at EC-0.57 eV that is located in the drain access region, as a function of accelerated life testing (ALT). The trap is detected by constant drain current deep level transient spectroscopy (CID-DLTS) and the CID-DLTS thermal emission time constant precisely matches the measured drain lag. Both drain lag and CID-DLTS measurements show this state to already exist in pre-stressed devices, which coupled with its strong increase in concentration as a function of stress in the absence of significant increases in concentrations of other detected traps, imply its role in causing degradation, in particular knee walkout. This study reveals EC-0.57 eV trap concentration tracks degradation induced by ALT for MOCVD-grown HEMTs supplied by several commercial and university sources. The results suggest this defect has a common source and may be a key degradation pathway in AlGaN/GaN HEMTs and/or an indicator to predict device lifetime.

Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

Energy Technology Data Exchange (ETDEWEB)

Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

2016-09-15

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

Properties and parameters of the electron beam injected into the mirror magnetic trap of a plasma accelerator

Energy Technology Data Exchange (ETDEWEB)

Andreev, V. V., E-mail: temple18@mail.ru; Novitsky, A. A.; Vinnichenko, L. A.; Umnov, A. M.; Ndong, D. O. [Peoples’ Friendship University of Russia (Russian Federation)

2016-03-15

The parameters of the injector of an axial plasma beam injected into a plasma accelerator operating on the basis of gyroresonance acceleration of electrons in the reverse magnetic field are determined. The trapping of the beam electrons into the regime of gyroresonance acceleration is numerically simulated by the particle- in-cell method. The optimal time of axial injection of the beam into a magnetic mirror trap is determined. The beam parameters satisfying the condition of efficient particle trapping into the gyromagnetic autoresonance regime are found.

Electron spin resonance of nitrogen-vacancy centers in optically trapped nanodiamonds

Science.gov (United States)

Horowitz, Viva R.; Alemán, Benjamín J.; Christle, David J.; Cleland, Andrew N.; Awschalom, David D.

2012-01-01

Using an optical tweezers apparatus, we demonstrate three-dimensional control of nanodiamonds in solution with simultaneous readout of ground-state electron-spin resonance (ESR) transitions in an ensemble of diamond nitrogen-vacancy color centers. Despite the motion and random orientation of nitrogen-vacancy centers suspended in the optical trap, we observe distinct peaks in the measured ESR spectra qualitatively similar to the same measurement in bulk. Accounting for the random dynamics, we model the ESR spectra observed in an externally applied magnetic field to enable dc magnetometry in solution. We estimate the dc magnetic field sensitivity based on variations in ESR line shapes to be approximately . This technique may provide a pathway for spin-based magnetic, electric, and thermal sensing in fluidic environments and biophysical systems inaccessible to existing scanning probe techniques. PMID:22869706

Modeling of radiation-induced charge trapping in MOS devices under ionizing irradiation

Energy Technology Data Exchange (ETDEWEB)

Petukhov, M. A., E-mail: m.a.petukhov@gmail.com; Ryazanov, A. I. [National Research Center Kurchatov Institute (Russian Federation)

2016-12-15

The numerical model of the radiation-induced charge trapping process in the oxide layer of a MOS device under ionizing irradiation is developed; the model includes carrier transport, hole capture by traps in different states, recombination of free electrons and trapped holes, kinetics of hydrogen ions which can be accumulated in the material during transistor manufacture, and accumulation and charging of interface states. Modeling of n-channel MOSFET behavior under 1 MeV photon irradiation is performed. The obtained dose dependences of the threshold voltage shift and its contributions from trapped holes and interface states are in good agreement with experimental data.

A Springloaded Metal-Ligand Mesocate Allows Access to Trapped Intermediates of Self-Assembly.

Science.gov (United States)

Bogie, Paul M; Holloway, Lauren R; Lyon, Yana; Onishi, Nicole C; Beran, Gregory J O; Julian, Ryan R; Hooley, Richard J

2018-04-02

A strained, "springloaded" Fe 2 L 3 iminopyridine mesocate shows highly variable reactivity upon postassembly reaction with competitive diamines. The strained assembly is reactive toward transimination in minutes at ambient temperature and allows observation of kinetically trapped intermediates in the self-assembly pathway. When diamines are used that can only form less favored cage products upon full equilibration, trapped ML 3 fragments with pendant, "hanging" NH 2 groups are selectively formed instead. Slight variations in diamine structure have large effects on the product outcome: less rigid diamines convert the mesocate to more favored self-assembled cage complexes under mild conditions and allow observation of heterocomplex intermediates in the displacement pathway. The mesocate allows control of equilibrium processes and direction of product outcomes via small, iterative changes in added subcomponent structure and provides a method of accessing metal-ligand cage structures not normally observed in multicomponent Fe-iminopyridine self-assembly.

Experimental investigation of the trapping and energy loss mechanisms of intense relativistic electron rings in hydrogen gas and plasma

International Nuclear Information System (INIS)

Smith, A.C. Jr.

1977-01-01

The results of an experimental study on the trapping and energy loss mechanisms of intense, relativistic electron rings confined in Astron-like magnetic field geometries are presented. The work is subdivided into four sections: gas trapping; average ring electron energetics; plasma trapping, and hollow-beam cusp-injection into gas and plasma. The mechanisms by which the injected beam coalesces into a current ring in the existing Cornell RECE-Berta facility are considered. To investigate the nature of ring electron energy loss mechanisms following completion of the trapping process, a diagnostic was developed utilizing multi-foil X-ray absorption spectroscopy to analyze the Bremsstrahlung generated by the electrons as they impinge upon a thin tungsten wire target suspended in the circulating current. Finally, a set of preliminary experimental results is presented in which an annular electron beam was passed through a coaxial, non-adiabatic magnetic cusp located at one end of a magnetic mirror well

Zonal flow generation in collisionless trapped electron mode turbulence

International Nuclear Information System (INIS)

Anderson, J; Nordman, H; Singh, R; Weiland, J

2006-01-01

In the present work the generation of zonal flows in collisionless trapped electron mode (TEM) turbulence is studied analytically. A reduced model for TEM turbulence is utilized based on an advanced fluid model for reactive drift waves. An analytical expression for the zonal flow growth rate is derived and compared with the linear TEM growth, and its scaling with plasma parameters is examined for typical tokamak parameter values

In situ electromagnetic field diagnostics with an electron plasma in a Penning-Malmberg trap

CERN Document Server

Amole, C; Baquero-Ruiz, M.; Bertsche, W.; Butler, E.; Capra, A.; Cesar, C.L.; Charlton, M.; Deller, A.; Evetts, N.; Eriksson, S.; Fajans, J.; Friesen, T.; Fujiwara, M.C.; Gill, D.R.; Gutierrez, A.; Hangst, J.S.; Hardy, W.N.; Hayden, M.E.; Isaac, C.A.; Jonsell, S.; Kurchaninov, L.; Little, A.; Madsen, N.; McKenna, J.T.K.; Menary, S.; Napoli, S.C.; Olchanski, K.; Olin, A.; Pusa, P.; Rasmussen, C.; Robicheaux, F.; Sarid, E.; Silveira, D.M.; So, C.; Stracka, S.; Tharp, T.; Thompson, R.I.; van der Werf, D.P.; Wurtele, J.S.

2014-01-01

We demonstrate a novel detection method for the cyclotron resonance frequency of an electron plasma in a Penning-Malmberg trap. With this technique, the electron plasma is used as an in situ diagnostic tool for measurement of the static magnetic field and the microwave electric field in the trap. The cyclotron motion of the electron plasma is excited by microwave radiation and the temperature change of the plasma is measured non-destructively by monitoring the plasma's quadrupole mode frequency. The spatially-resolved microwave electric field strength can be inferred from the plasma temperature change and the magnetic field is found through the cyclotron resonance frequency. These measurements were used extensively in the recently reported demonstration of resonant quantum interactions with antihydrogen.

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

Science.gov (United States)

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-10

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Dependence of secondary electron emission on surface charging in sapphire and polycrystalline alumina: Evaluation of the effective cross sections for recombination and trapping

International Nuclear Information System (INIS)

Said, K.; Damamme, G.; Si Ahmed, A.; Moya, G.; Kallel, A.

2014-01-01

Highlights: • A novel approach for the analysis of the secondary electron emission in connection with the surface density of trapped charges. • Experimental estimation of the effective cross section for electron–hole recombination and electron trapping in defects. • A simplified charge transport and trapping model which corroborates qualitatively the interpretation of the results. - Abstract: The evolution of the secondary electron emission from sapphire and polycrystalline alumina during electron irradiation, achieved in a scanning electron microscope at room temperature, is derived from the measurement of the induced and the secondary electron currents. The semi-logarithmic plot of the secondary electron emission yield versus the surface density of trapped charges displays a plateau followed by a linear variation. For positive charging, the slope of the linear part, whose value is of about 10 −9 cm 2 , is independent of the primary electron energy, the microstructure and the impurities. It is interpreted as an effective microscopic cross section for electron–hole recombination. For negative charging of sapphire, the slope is associated with an effective electron trapping cross section close to 10 −11 cm 2 , which can be assigned to the dominant impurity trap. These effective values reflect the multiple interactions leading to the accumulation of charges. The yield corresponding to the plateau is controlled by the initial density of impurity traps. A charge transport and trapping >model, based on simplifying assumptions, confirms qualitatively these inferences

Increased electric sail thrust through removal of trapped shielding electrons by orbit chaotisation due to spacecraft body

Directory of Open Access Journals (Sweden)

P. Janhunen

2009-08-01

Full Text Available An electric solar wind sail is a recently introduced propellantless space propulsion method whose technical development has also started. The electric sail consists of a set of long, thin, centrifugally stretched and conducting tethers which are charged positively and kept in a high positive potential of order 20 kV by an onboard electron gun. The positively charged tethers deflect solar wind protons, thus tapping momentum from the solar wind stream and producing thrust. The amount of obtained propulsive thrust depends on how many electrons are trapped by the potential structures of the tethers, because the trapped electrons tend to shield the charged tether and reduce its effect on the solar wind. Here we present physical arguments and test particle calculations indicating that in a realistic three-dimensional electric sail spacecraft there exist a natural mechanism which tends to remove the trapped electrons by chaotising their orbits and causing them to eventually collide with the conducting tethers. We present calculations which indicate that if these mechanisms were able to remove trapped electrons nearly completely, the electric sail performance could be about five times higher than previously estimated, about 500 nN/m, corresponding to 1 N thrust for a baseline construction with 2000 km total tether length.

Second generation measurement of the electric dipole moment of the electron using trapped ThF+ ions

Science.gov (United States)

Ng, Kia Boon; Zhou, Yan; Gresh, Daniel; Cairncross, William; Grau, Matthew; Ni, Yiqi; Ye, Jun; Cornell, Eric

2016-05-01

ThF+ has been chosen as the candidate for a second generation measurement of the electric dipole moment of the electron (eEDM). Compared to the current HfF+ eEDM experiment, ThF+ has several advantages: (i) the eEDM-sensitive state (3Δ1) is the ground state, which facilitates a long coherence time; (ii) its effective electric field (38 GV/cm) is 50% larger than that of HfF+, which promises a direct increase of the eEDM sensitivity; and (iii) the ionization energy of neutral ThF is lower than its dissociation energy, which introduces greater flexibility in rotational state-selective photoionization via core-nonpenetrating Rydberg states. Here, we present progress of our experimental setup, preliminary spectroscopic data of multi-photon ionization, and discussions of new features in ion trapping, state preparation and population readout.

Electronic States in Thorium under Pressure

DEFF Research Database (Denmark)

Skriver, Hans Lomholt; Jan, J. P.

1980-01-01

We have used the local-density formalism and the atomic-sphere approximation to calculate self-consistently the electronic properties of thorium at pressures up to 400 kbar. The derived equation of state agrees very well with static pressure experiments and shock data. Below the Fermi level (EF......) the electronic band structure is formed by 7s and 6d states while the bottom of a relatively broad 5f band is positioned 0.07 Ry above EF. The calculated extremal areas of the Fermi surface and their calculated pressure dependence agree with earlier calculations and with de Haas-van Alphen measurements...

Optical storage studies on the trapping states of BaFCl:Eu sup 2 sup +

CERN Document Server

Meng Xian Guo; Sun Li; Jin Hui; Zhang Li

2003-01-01

The optical absorption spectra of BaF sub 2 sub - sub x Cl sub x :Eu in different states of optical storage were measured to clarify the electron trapping mechanism for its optical storage and photo-stimulated luminescence (PSL). Based on the absorption spectra and difference absorption spectra, the electron transfer processes after ultraviolet (UV) light irradiation were investigated. This demonstrates that (1) Eu sup 3 sup + ions are formed upon UV light irradiation at room temperature; (2) the two absorption bands in the visible region (400-600 nm) should be assigned to two different F centres, both of which contribute to the optical storage and PSL, and (3) a third broad difference absorption band around approx 650 nm, which matches the common laser better, was observed.

Trapping time of excitons in Si nanocrystals embedded in a SiO2 matrix

Science.gov (United States)

de Jong, E. M. L. D.; de Boer, W. D. A. M.; Yassievich, I. N.; Gregorkiewicz, T.

2017-05-01

Silicon (Si) nanocrystals (NCs) are of great interest for many applications, ranging from photovoltaics to optoelectonics. The photoluminescence quantum yield of Si NCs dispersed in SiO2 is limited, suggesting the existence of very efficient processes of nonradiative recombination, among which the formation of a self-trapped exciton state on the surface of the NC. In order to improve the external quantum efficiency of these systems, the carrier relaxation and recombination need to be understood more thoroughly. For that purpose, we perform transient-induced absorption spectroscopy on Si NCs embedded in a SiO2 matrix over a broad probe range for NCs of average sizes from 2.5 to 5.5 nm. The self-trapping of free excitons on surface-related states is experimentally and theoretically discussed and found to be dependent on the NC size. These results offer more insight into the self-trapped exciton state and are important to increase the optical performance of Si NCs.

Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO

Science.gov (United States)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-04-01

The effects of hole injection in amorphous indium-gallium-zinc-oxide (a-IGZO) are analyzed by means of first-principles calculations. The injection of holes in the valence band tail states leads to their capture as a polaron, with high self-trapping energies (from 0.44 to 1.15 eV). Once formed, they mediate the formation of peroxides and remain localized close to the hole injection source due to the presence of a large diffusion energy barrier (of at least 0.6 eV). Their diffusion mechanism can be mediated by the presence of hydrogen. The capture of these holes is correlated with the low off-current observed for a-IGZO transistors, as well as with the difficulty to obtain a p-type conductivity. The results further support the formation of peroxides as being the root cause of Negative Bias Illumination Stress (NBIS). The strong self-trapping substantially reduces the injection of holes from the contact and limits the creation of peroxides from a direct hole injection. In the presence of light, the concentration of holes substantially rises and mediates the creation of peroxides, responsible for NBIS.

Charge Trapping in Photovoltaically Active Perovskites and Related Halogenoplumbate Compounds.

Science.gov (United States)

Shkrob, Ilya A; Marin, Timothy W

2014-04-03

Halogenoplumbate perovskites (MeNH3PbX3, where X is I and/or Br) have emerged as promising solar panel materials. Their limiting photovoltaic efficiency depends on charge localization and trapping processes that are presently insufficiently understood. We demonstrate that in halogenoplumbate materials the holes are trapped by organic cations (that deprotonate from their oxidized state) and Pb(2+) cations (as Pb(3+) centers), whereas the electrons are trapped by several Pb(2+) cations, forming diamagnetic lead clusters that also serve as color centers. In some cases, paramagnetic variants of these clusters can be observed. We suggest that charge separation in the halogenoplumbates resembles latent image formation in silver halide photography. Electron and hole trapping by lead clusters in extended dislocations in the bulk may be responsible for accumulation of trapped charge observed in this photovoltaic material.

Transport through dissipative trapped electron mode and toroidal ion temperature gradient mode in TEXTOR

International Nuclear Information System (INIS)

Rogister, A.; Hasselberg, G.; Waelbroeck, F.; Weiland, J.

1987-12-01

A self-consistent transport code is used to evaluate how plasma confinement in tokamaks is influenced by the microturbulent fields which are excited by the dissipative trapped electron (DTE) instability. As shown previously, the saturation theory on which the code is based has been developed from first principles. The toroidal coupling resulting from the ion magnetic drifts is neglected; arguments are presented to justify this approximation. The numerical results reproduce well the neo-Alcator scaling law observed experimentally - e.g. in TEXTOR - in non detached ohmic discharges, the confinement degradation which results when auxiliary heating is applied, as well as a large number of other experimental observations. We also assess the possible impact of the toroidal ion temperature gradient mode on energy confinement by estimating the ion thermal flux with the help of the mixing length approximation. (orig./GG)

Impact of electron trapping on RF current drive in tokamaks

International Nuclear Information System (INIS)

Giruzzi, G.; Engelmann, F.

1987-01-01

The impact of the presence of trapped electrons on noninductive current drive by RF waves in tokamak plasmas is investigated. The appropriate response function, allowing to express the current drive efficiency J/P by a simple analytical formula, has been derived. The approach displays the reasons for the degradation of the current drive efficiency away from the plasma axis in the case of methods relying on the diffusion of electrons in the velocity component perpendicular to the confining magnetic field. It is shown that this degradation is appreciable even for large resonant parallel velocities. (author) [pt

Overview of the Livermore electron beam ion trap project

International Nuclear Information System (INIS)

Beiersdorfer, P.; Behar, E.; Boyce, K.R.; Brown, G.V.; Chen, H.; Gendreau, K.C.; Graf, A.; Gu, M.-F.; Harris, C.L.; Kahn, S.M.; Kelley, R.L.; Lepson, J.K.; May, M.J.; Neill, P.A.; Pinnington, E.H.; Porter, F.S.; Smith, A.J.; Stahle, C.K.; Szymkowiak, A.E.; Tillotson, A.; Thorn, D.B.; Traebert, E.; Wargelin, B.J.

2003-01-01

The Livermore electron beam ion trap facility has recently been moved to a new location within LLNL, and new instrumentation was added, including a 32-pixel microcalorimeter. The move was accompanied by a shift of focus toward in situ measurements of highly charged ions, which continue with increased vigor. Overviews of the facility, which includes EBIT-I and SuperEBIT, and the research projects are given, including results from optical spectroscopy, QED, and X-ray line excitation measurements

Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

International Nuclear Information System (INIS)

Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

1990-01-01

Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

Probing the density of trap states in the middle of the bandgap using ambipolar organic field-effect transistors

Science.gov (United States)

Häusermann, Roger; Chauvin, Sophie; Facchetti, Antonio; Chen, Zhihua; Takeya, Jun; Batlogg, Bertram

2018-04-01

The number of trap states in the band gap of organic semiconductors directly influences the charge transport as well as the threshold and turn-on voltage. Direct charge transport measurements have been used until now to probe the trap states rather close to the transport level, whereas their number in the middle of the band gap has been elusive. In this study, we use PDIF-CN2, a well known n-type semiconductor, together with vanadium pentoxide electrodes to build ambipolar field-effect transistors. Employing three different methods, we study the density of trap states in the band gap of the semiconductor. These methods give consistent results, and no pool of defect states was found. Additionally, we show first evidence that the number of trap states close to the transport level is correlated with the number of traps in the middle of the band-gap, meaning that a high number of trap states close to the transport level also implies a high number of trap states in the middle of the band gap. This points to a common origin of the trap states over a wide energy range.

Quantum computing with four-particle decoherence-free states in ion trap

OpenAIRE

Feng, Mang; Wang, Xiaoguang

2001-01-01

Quantum computing gates are proposed to apply on trapped ions in decoherence-free states. As phase changes due to time evolution of components with different eigenenergies of quantum superposition are completely frozen, quantum computing based on this model would be perfect. Possible application of our scheme in future ion-trap quantum computer is discussed.

The drift-diffusion interpretation of the electron current within the organic semiconductor characterized by the bulk single energy trap level

Science.gov (United States)

Cvikl, B.

2010-01-01

The closed solution for the internal electric field and the total charge density derived in the drift-diffusion approximation for the model of a single layer organic semiconductor structure characterized by the bulk shallow single trap-charge energy level is presented. The solutions for two examples of electric field boundary conditions are tested on room temperature current density-voltage data of the electron conducting aluminum/tris(8-hydroxyquinoline aluminum/calcium structure [W. Brütting et al., Synth. Met. 122, 99 (2001)] for which jexp∝Va3.4, within the interval of bias 0.4 V≤Va≤7. In each case investigated the apparent electron mobility determined at given bias is distributed within a given, finite interval of values. The bias dependence of the logarithm of their lower limit, i.e., their minimum values, is found to be in each case, to a good approximation, proportional to the square root of the applied electric field. On account of the bias dependence as incorporated in the minimum value of the apparent electron mobility the spatial distribution of the organic bulk electric field as well as the total charge density turn out to be bias independent. The first case investigated is based on the boundary condition of zero electric field at the electron injection interface. It is shown that for minimum valued apparent mobilities, the strong but finite accumulation of electrons close to the anode is obtained, which characterize the inverted space charge limited current (SCLC) effect. The second example refers to the internal electric field allowing for self-adjustment of its boundary values. The total electron charge density is than found typically to be of U shape, which may, depending on the parameters, peak at both or at either Alq3 boundary. It is this example in which the proper SCLC effect is consequently predicted. In each of the above two cases, the calculations predict the minimum values of the electron apparent mobility, which substantially

Self-confinement of finite dust clusters in isotropic plasmas.

Science.gov (United States)

Miloshevsky, G V; Hassanein, A

2012-05-01

Finite two-dimensional dust clusters are systems of a small number of charged grains. The self-confinement of dust clusters in isotropic plasmas is studied using the particle-in-cell method. The energetically favorable configurations of grains in plasma are found that are due to the kinetic effects of plasma ions and electrons. The self-confinement phenomenon is attributed to the change in the plasma composition within a dust cluster resulting in grain attraction mediated by plasma ions. This is a self-consistent state of a dust cluster in which grain's repulsion is compensated by the reduced charge and floating potential on grains, overlapped ion clouds, and depleted electrons within a cluster. The common potential well is formed trapping dust clusters in the confined state. These results provide both valuable insights and a different perspective to the classical view on the formation of boundary-free dust clusters in isotropic plasmas.

Photoexcited carrier trapping and recombination at Fe centers in GaN

International Nuclear Information System (INIS)

Uždavinys, T. K.; Marcinkevičius, S.; Leach, J. H.; Evans, K. R.; Look, D. C.

2016-01-01

Fe doped GaN was studied by time-resolved photoluminescence (PL) spectroscopy. The shape of PL transients at different temperatures and excitation powers allowed discrimination between electron and hole capture to Fe"3"+ and Fe"2"+ centers, respectively. Analysis of the internal structure of Fe ions and intra-ion relaxation rates suggests that for high repetition rates of photoexciting laser pulses the electron and hole trapping takes place in the excited state rather than the ground state of Fe ions. Hence, the estimated electron and hole capture coefficients of 5.5 × 10"−"8 cm"3/s and 1.8 × 10"−"8 cm"3/s should be attributed to excited Fe"3"+ and Fe"2"+ states. The difference in electron capture rates determined for high (MHz) and low (Hz) (Fang et al., Appl. Phys. Lett. 107, 051901 (2015)) pulse repetition rates may be assigned to the different Fe states participating in the carrier capture. A weak temperature dependence of the electron trapping rate shows that the potential barrier for the multiphonon electron capture is small. A spectral feature observed at ∼420 nm is assigned to the radiative recombination of an electron in the ground Fe"2"+ state and a bound hole.

Capturing self-propelled particles in a moving microwedge

Science.gov (United States)

Kaiser, A.; Popowa, K.; Wensink, H. H.; Löwen, H.

2013-08-01

Catching fish with a fishing net is typically done either by dragging a fishing net through quiescent water or by placing a stationary basket trap into a stream. We transfer these general concepts to micron-sized self-motile particles moving in a solvent at low Reynolds number and study their collective trapping behavior by means of computer simulations of a two-dimensional system of self-propelled rods. A chevron-shaped obstacle is dragged through the active suspension with a constant speed v and acts as a trapping “net.” Three trapping states can be identified corresponding to no trapping, partial trapping, and complete trapping and their relative stability is studied as a function of the apex angle of the wedge, the swimmer density, and the drag speed v. When the net is dragged along the inner wedge, complete trapping is facilitated and a partially trapped state changes into a complete trapping state if the drag speed exceeds a certain value. Reversing the drag direction leads to a reentrant transition from no trapping to complete trapping and then back to no trapping upon increasing the drag speed along the outer wedge contour. The transition to complete trapping is marked by a templated self-assembly of rods forming polar smectic structures anchored onto the inner contour of the wedge. Our predictions can be verified in experiments of artificial or microbial swimmers confined in microfluidic trapping devices.

METHOD AND APPARATUS FOR INJECTING AND TRAPPING ELECTRONS IN A MAGNETIC FIELD

Science.gov (United States)

Christofilos, N.C.

1962-05-29

An apparatus is designed for the manipulation of electrons in an exially symmetric magnetic field region and may be employed to trap electrons in such a field by directing an electron beam into a gradientially intensified field region therein to form an annular electron moving axially in the field and along a decreasing field gradient. Dissipative loop circuits such as resistive loops are disposed along at least the decreasing field gradient so as to be inductively coupled to the electron bunch so as to extract energy of the electron bunch and provide a braking force effective to reduce the velocity of the bunch. Accordingly, the electron bunch upon entering a lower intensity magnetic field region is retained therein since the electrons no longer possess sufficient energy to escape. (AEC)

A comprehensive spectral theory of zonal-mode dynamics in trapped electron mode turbulence

International Nuclear Information System (INIS)

Terry, P.W.; Gatto, R.; Baver, D.A.; Fernandez, E.

2005-01-01

A comprehensive, self-consistent theory for spectral dynamics in trapped electron mode (TEM) turbulence offers critical new understanding and insights into zonal-mode physics. This theory shows that 1) zonal mode structure, anisotropy, excitation, and temporal behavior arise at and from the interface of nonlinear advection and linear wave properties; 2) waves induce a marked spectral energy-transfer anisotropy that preferentially drives zonal modes relative to non zonal modes; 3) triplet correlations involving density (as opposed to those involving only flow) mediate the dominant energy transfer at long wavelengths; 4) energy transfer becomes inverse in the presence of wave anisotropy, where otherwise it is forward; 5) zonal-mode excitation is accompanied by excitation of a spectrum of damped eigenmodes, making zonal modes nonlinearly damped; and 6) the combination of anisotropic transfer to zonal modes and their nonlinear damping make this the dominant saturation mechanism for TEM turbulence. This accounts for the reduction of turbulence level by zonal modes, not zonal-flow ExB shearing. (author)

Dynamic trapping of electrons in space plasmas

International Nuclear Information System (INIS)

Brenning, N.; Bohm, M.; Faelthammar, C.G.

1989-12-01

The neutralization of positive space charge is studied in a case where heavy positive ions are added to a limited region of length L in a collisionfree magnetized plasma. It is found that electrons which become accelerated towards the positive space charge can only achieve a partial neutralization: they overshoot, and the positive region becomes surrounded by negative space charges which screen the electric field from the surroundings. The process is studied both analytically and by computer simulations with consistent results: large positive potentials (U>>kT e /e) can be built up with respect to the surrounding plasma. In the process of growth, the potential maximum traps electrons in transit so that quasineutrality is maintained. The potential U is proportional to the ambient electron temperature and the square of the plasma density increase, but independent of both the ion injection rate and the length L. The process explains several features of the Porcupinge xenon beam injection experiment. It could also have importance for the electrodynamic coupling between plasmas of different densities, e.g. the injection of neutral clouds in the ionosphere of species that becomes rapidly photoionized, or penetration of dense plasma clouds from the solar wind into the magnetosphere. (31 refs.) (authors)

Coherent structural trapping through wave packet dispersion during photoinduced spin state switching

DEFF Research Database (Denmark)

Lemke, Henrik T.; Kjær, Kasper Skov; Hartsock, Robert

2017-01-01

The description of ultrafast nonadiabatic chemical dynamics during molecular photo-transformations remains challenging because electronic and nuclear configurations impact each other and cannot be treated independently. Here we gain experimental insights, beyond the Born-Oppenheimer approximation...... is distinguished from the structural trapping dynamics, which launches a coherent oscillating wave packet (265 fs period), clearly identified as molecular breathing. Throughout the structural trapping, the dispersion of the wave packet along the reaction coordinate reveals details of intramolecular vibronic...

A dominant electron trap in molecular beam epitaxial InAlN lattice-matched to GaN

Science.gov (United States)

Pandey, Ayush; Bhattacharya, Aniruddha; Cheng, Shaobo; Botton, Gianluigi A.; Mi, Zetian; Bhattacharya, Pallab

2018-04-01

Deep levels in lattice-matched undoped and Si-doped InAlN/GaN grown by plasma-assisted molecular beam epitaxy have been identified and characterized by capacitance and photocapacitance measurements. From x-ray diffraction, reflectance measurements, electron energy loss spectroscopy and high-resolution transmission electron microscopy it is evident that the material has two distinct phases with different compositions. These correspond to In compositions of 18.1% and 25.8%, with corresponding bandgaps of 4.6 eV and 4.1 eV, respectively. The lower bandgap material is present as columnar microstructures in the form of quantum wires. A dominant electron trap with an activation energy of 0.293  ±  0.01 eV, a small capture cross-section of (1.54  ±  0.25)  ×  10-18 cm2, and density increasing linearly with Si doping density is identified in all the samples. The characteristics of the electron trap and variation of diode capacitance are discussed in the context of carrier dynamics involving the dominant trap level and the quantum wires.

Electron spin-lattice relaxation mechanisms of radiation produced trapped electrons and hydrogen atoms in aqueous and organic glassy matrices. Modulation of electron nuclear dipolar interaction by tunnelling modes in a glassy matrix. [. gamma. rays

Energy Technology Data Exchange (ETDEWEB)

Bowman, M K; Kevan, L [Wayne State Univ., Detroit, Mich. (USA). Dept. of Chemistry

1977-01-01

The spin lattice relaxation of trapped electrons in aqueous and organic glasses and trapped hydrogen atoms in phosphoric acid glass has been directly studied as a function of temperature by the saturation recovery method. Below 50 to 100 K, the major spin lattice relaxation mechanism involves modulation of the electron nuclear dipolar (END) interaction with nuclei in the radical's environment by tunnelling of those nuclei between two or more positions. This relaxation mechanism occurs with high efficiency and has a characteristic linear temperature dependence. The tunnelling nuclei around trapped electrons do not seem to involve the nearest neighbor nuclei which are oriented by the electron in the process of solvation. Instead the tunnelling nuclei typically appear to be next nearest neighbors to the trapped electron. The identities of the tunnelling nuclei have been deduced by isotopic substitution and are attributed to: Na in 10 mol dm/sup -3/ NaOH aqueous glass, ethyl protons in ethanol glass, methyl protons in methanol glass and methyl protons in MTHF glass. For trapped hydrogen atoms in phosphoric acid, the phosphorus nuclei appear to be the effective tunnelling nuclei. Below approximately 10 K the spin lattice relaxation is dominated by a temperature independent cross relaxation term for H atoms in phosphoric acid glass and for electrons in 10 mol dm/sup -3/ NaOH aqueous glass, but not for electrons in organic glasses. This is compared with recent electron-electron double resonance studies of cross relaxation in these glasses. The spin lattice relaxation of O/sup -/ formed in 10 mol dm/sup -3/ NaOH aqueous glass was also studied and found to be mainly dominated by a Raman process with an effective Debye temperature of about 100 K.

Deeply trapped electrons in imaging plates and their utilization for extending the dynamic range

International Nuclear Information System (INIS)

Ohuchi, Hiroko; Kondo, Yasuhiro

2010-01-01

The absorption spectra of deep centers in an imaging plate (IP) made of BaFBr 0:85 I 0:15 :Eu 2+ have been studied in the ultraviolet region. Electrons trapped in deep centers are considered to be the cause of unerasable and reappearing latent images in IPs over-irradiated with X-rays. Deep centers showed a dominant peak at around 320 nm, followed by two small peaks at around 345 and 380 nm. By utilizing deeply trapped electrons, we have attempted to extend the dynamic range of an IP. The IP was irradiated by 150-kV X-rays with doses from 8.07 mGy to 80.7 Gy. Reading out the latent image by the stimulation of Eu 2+ luminescence with a 633-nm He-Ne laser light from a conventional Fuji reader showed a linear relationship with irradiated dose up to 0.8 Gy, but then becoming non-linear. After fully erasing with visible light, unerasable latent images were read out using 635-nm semi-conductor laser light combined with a photon-counting detection system. The dose-response curve so obtained gave a further two orders of magnitude extending the dynamic range up to 80.7 Gy. Comprehensive results indicate that electrons supplied from deep centers to the F centers provided the extended dynamic range after the F centers became saturated. Based on these facts, a model of the excitation of deeply trapped electrons and PSL processes is proposed.

Molecular Electronics of Self-Assembled Monolayers

DEFF Research Database (Denmark)

Wang, Xintai

This thesis deals withmolecular electronic investigations on self-assembledmonolayers. The thesis is divided into seven chapters, as outlined below.Chapter 1 is a general introduction of the history of molecular electronics and its current state.Chapter 2 is separated into three parts. Part I...... providesa brief introduction toself-assembledmonolayers(SAMs), includingits structure, formation, and its role in molecular electronic investigations. Part II is an introduction of different molecular functions, which are interesting for designing real devices. Part III is an introduction of a novel carbon...... material: graphene, and how such material can be incorporated intothe field of molecular electronics.Chapter 3 is a brief introduction of important instruments used in this thesis.Chapter 4, 5 and 6 describe the major experimental work in this thesis. Chapter 4 introduces two novel anchoring...

Plasma electron hole kinematics. I. Momentum conservation

Energy Technology Data Exchange (ETDEWEB)

Hutchinson, I. H.; Zhou, C. [Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2016-08-15

We analyse the kinematic properties of a plasma electron hole: a non-linear self-sustained localized positive electric potential perturbation, trapping electrons, which behaves as a coherent entity. When a hole accelerates or grows in depth, ion and electron plasma momentum is changed both within the hole and outside, by an energization process we call jetting. We present a comprehensive analytic calculation of the momentum changes of an isolated general one-dimensional hole. The conservation of the total momentum gives the hole's kinematics, determining its velocity evolution. Our results explain many features of the behavior of hole speed observed in numerical simulations, including self-acceleration at formation, and hole pushing and trapping by ion streams.

Shallow trapping vs. deep polarons in a hybrid lead halide perovskite, CH3NH3PbI3.

Science.gov (United States)

Kang, Byungkyun; Biswas, Koushik

2017-10-18

There has been considerable speculation over the nature of charge carriers in organic-inorganic hybrid perovskites, i.e., whether they are free and band-like, or they are prone to self-trapping via short range deformation potentials. Unusually long minority-carrier diffusion lengths and moderate-to-low mobilities, together with relatively few deep defects add to their intrigue. Here we implement density functional methods to investigate the room-temperature, tetragonal phase of CH 3 NH 3 PbI 3 . We compare charge localization behavior at shallow levels and associated lattice relaxation versus those at deep polaronic states. The shallow level originates from screened Coulomb interaction between the perturbed host and an excited electron or hole. The host lattice has a tendency towards forming these shallow traps where the electron or hole is localized not too far from the band edge. In contrast, there is a considerable potential barrier that must be overcome in order to initiate polaronic hole trapping. The formation of a hole polaron (I 2 - center) involves strong lattice relaxation, including large off-center displacement of the organic cation, CH 3 NH 3 + . This type of deep polaron is energetically unfavorable, and active shallow traps are expected to shape the carrier dynamics in this material.

Hydrodynamic Relaxation of an Electron Plasma to a Near-Maximum Entropy State

International Nuclear Information System (INIS)

Rodgers, D. J.; Servidio, S.; Matthaeus, W. H.; Mitchell, T. B.; Aziz, T.; Montgomery, D. C.

2009-01-01

Dynamical relaxation of a pure electron plasma in a Malmberg-Penning trap is studied, comparing experiments, numerical simulations and statistical theories of weakly dissipative two-dimensional (2D) turbulence. Simulations confirm that the dynamics are approximated well by a 2D hydrodynamic model. Statistical analysis favors a theoretical picture of relaxation to a near-maximum entropy state with constrained energy, circulation, and angular momentum. This provides evidence that 2D electron fluid relaxation in a turbulent regime is governed by principles of maximum entropy.

Deuterium trapping at vacancy clusters in electron/neutron-irradiated tungsten studied by positron annihilation spectroscopy

Science.gov (United States)

Toyama, T.; Ami, K.; Inoue, K.; Nagai, Y.; Sato, K.; Xu, Q.; Hatano, Y.

2018-02-01

Deuterium trapping at irradiation-induced defects in tungsten, a candidate material for plasma facing components in fusion reactors, was revealed by positron annihilation spectroscopy. Pure tungsten was electron-irradiated (8.5 MeV at ∼373 K and to a dose of ∼1 × 10-3 dpa) or neutron-irradiated (at 573 K to a dose of ∼0.3 dpa), followed by post-irradiation annealing at 573 K for 100 h in deuterium gas of ∼0.1 MPa. In both cases of electron- or neutron-irradiation, vacancy clusters were found by positron lifetime measurements. In addition, positron annihilation with deuterium electrons was demonstrated by coincidence Doppler broadening measurements, directly indicating deuterium trapping at vacancy-type defects. This is expected to cause significant increase in deuterium retention in irradiated-tungsten.

Trap spectrum of the ``new oxygen donor'' in silicon

Science.gov (United States)

Hölzlein, K.; Pensl, G.; Schulz, M.

1984-07-01

Electronic properties of the new oxygen donor generated in phosphorus-doped Czochralski-silicon at 650‡C are investigated by deep level transient spectroscopy. A continuous distribution of trap states (1014 1016 cm-3 eV-1) is detected in the upper half of the band gap with increasing values towards the conduction band. The magnitude of the state density observed increases with the oxygen content, the heat duration, and a preanneal at temperatures lower than 650‡C. The continuous trap spectrum of the new donor is explained by interface states occuring at the surface of SiO x precipitates.

A Landau fluid model for dissipative trapped electron modes

International Nuclear Information System (INIS)

Hedrick, C.L.; Leboeuf, J.N.; Sidikman, K.L.

1995-09-01

A Landau fluid model for dissipative trapped electron modes is developed which focuses on an improved description of the ion dynamics. The model is simple enough to allow nonlinear calculations with many harmonics for the times necessary to reach saturation. The model is motivated by a discussion that starts with the gyro-kinetic equation and emphasizes the importance of simultaneously including particular features of magnetic drift resonance, shear, and Landau effects. To ensure that these features are simultaneously incorporated in a Landau fluid model with only two evolution equations, a new approach to determining the closure coefficients is employed. The effect of this technique is to reduce the matching of fluid and kinetic responses to a single variable, rather than two, and to allow focusing on essential features of the fluctuations in question, rather than features that are only important for other types of fluctuations. Radially resolved nonlinear calculations of this model, advanced in time to reach saturation, are presented to partially illustrate its intended use. These calculations have a large number of poloidal and toroidal harmonics to represent the nonlinear dynamics in a converged steady state which includes cascading of energy to both short and long wavelengths

Energy Spread Reduction of Electron Beams Produced via Laser Wake

Energy Technology Data Exchange (ETDEWEB)

Pollock, Bradley Bolt [Univ. of California, San Diego, CA (United States)

2012-01-01

Laser wakefield acceleration of electrons holds great promise for producing ultra-compact stages of GeV scale, high quality electron beams for applications such as x-ray free electron lasers and high energy colliders. Ultra-high intensity laser pulses can be self-guided by relativistic plasma waves over tens of vacuum diffraction lengths, to give >1 GeV energy in cm-scale low density plasma using ionization-induced injection to inject charge into the wake at low densities. This thesis describes a series of experiments which investigates the physics of LWFA in the self-guided blowout regime. Beginning with high density gas jet experiments the scaling of the LWFA-produced electron beam energy with plasma electron density is found to be in excellent agreement with both phenomenological theory and with 3-D PIC simulations. It is also determined that self-trapping of background electrons into the wake exhibits a threshold as a function of the electron density, and at the densities required to produce electron beams with energies exceeding 1 GeV a different mechanism is required to trap charge into low density wakes. By introducing small concentrations of high-Z gas to the nominal He background the ionization-induced injection mechanism is enabled. Electron trapping is observed at densities as low as 1.3 x 10¹⁸ cm^-3 in a gas cell target, and 1.45 GeV electrons are demonstrated for the first time from LWFA. This is currently the highest electron energy ever produced from LWFA. The ionization-induced trapping mechanism is also shown to generate quasi-continuous electron beam energies, which is undesirable for accelerator applications. By limiting the region over which ionization-induced trapping occurs, the energy spread of the electron beams can be controlled. The development of a novel two-stage gas cell target provides the capability to tailor the gas composition in the longitudinal direction, and confine the trapping process to occur only in a

Relaxation oscillations induced by amplitude-dependent frequency in dissipative trapped electron mode turbulence

International Nuclear Information System (INIS)

Terry, P.W.; Ware, A.S.; Newman, D.E.

1994-01-01

A nonlinear frequency shift in dissipative trapped electron mode turbulence is shown to give rise to a relaxation oscillation in the saturated power density spectrum. A simple non-Markovian closure for the coupled evolution of ion momentum and electron density response is developed to describe the oscillations. From solutions of a nonlinear oscillator model based on the closure, it is found that the oscillation is driven by the growth rate, as modified by the amplitude-dependent frequency shift, with inertia provided by the memory of the growth rate of prior amplitudes. This memory arises from time-history integrals common to statistical closures. The memory associated with a finite time of energy transfer between coupled spectrum components does not sustain the oscillation in the simple model. Solutions of the model agree qualitatively with the time-dependent numerical solutions of the original dissipative trapped electron model, yielding oscillations with the proper phase relationship between the fluctuation energy and the frequency shift, the proper evolution of the wave number spectrum shape and particle flux, and a realistic period

Ultrafast state detection and 2D ion crystals in a Paul trap

Science.gov (United States)

Ip, Michael; Ransford, Anthony; Campbell, Wesley

2016-05-01

Projective readout of quantum information stored in atomic qubits typically uses state-dependent CW laser-induced fluorescence. This method requires an often sophisticated imaging system to spatially filter out the background CW laser light. We present an alternative approach that instead uses simple pulse sequences from a mode-locked laser to affect the same state-dependent excitations in less than 1 ns. The resulting atomic fluorescence occurs in the dark, allowing the placement of non-imaging detectors right next to the atom to improve the qubit state detection efficiency and speed. We also study 2D Coulomb crystals of atomic ions in an oblate Paul trap. We find that crystals with hundreds of ions can be held in the trap, potentially offering an alternative to the use of Penning traps for the quantum simulation of 2D lattice spin models. We discuss the classical physics of these crystals and the metastable states that are supported in 2D. This work is supported by the US Army Research Office.

Effects of electrostatic trapping on neoclassical transport in an impure plasma

International Nuclear Information System (INIS)

Hazeltine, R.D.; Ware, A.A.

1976-01-01

Contamination of a toroidally confined plasma by highly charged impurity ions can produce substantial variation of the electrostatic potential within a magnetic surface. The resulting electrostatic trapping and electrostatic drifts, of hydrogen ions and electrons, yields significant alterations in neoclassical transport theory. A transport theory which includes these effects is derived from the drift-kinetic equation, with an ordering scheme modeled on the parameters of recent tokamak experiments. The theory self-consistently predicts that electrostatic trapping should be fully comparable to magnetic trapping, and provides transport coefficients which, depending quadratically upon the temperature and pressure gradients, differ markedly from the standard neoclassical coefficients for a pure plasma

Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity

International Nuclear Information System (INIS)

Lee, E.Y.; Brunett, B.A.; Olsen, R.W.; Van Scyoc, J.M. III; Hermon, H.; James, R.B.

1998-01-01

The electrical properties of CdZnTe radiation detectors are largely determined by electron and hole traps in this material. The traps, in addition to degrading the detector performance, can function as dopants and determine the resistivity of the material. Thermoelectric emission spectroscopy and thermally stimulated conductivity are used to detect these traps in a commercially available spectrometer-grade CdZnTe detector, and the electrical resistivity is measured as a function of temperature. A deep electron trap having an energy of 695 meV and cross section of 8 x 10 -16 cm 2 is detected and three hole traps having energies of 70 ± 20 meV, 105 ± 30 meV and 694 ± 162 meV are detected. A simple model based on these traps explains quantitatively all the data, including the electrical properties at room temperature and also their temperature dependence

Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

1993-01-01

We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

Laboratory X-ray Studies with Trapped Highly Charged Ions Using Synchrotrons and Free-electron Lasers

Science.gov (United States)

Crespo López-Urrutia, José R.

2018-06-01

Laboratory studies on highly charged ions (HCI) using electron beam ion traps (EBITs) can cover all charge states and chemical elements found in astrophysical sources. Since their introduction in 1986, a wealth of emission measurements from the optical to the x-ray range has been carried out by different groups. In most of the work, electron-impact excitation was the driving mechanism, and high resolution spectrometers were used for the diagnostic of the emitted radiation. Other recent studies included x-ray emission following charge exchange, a mechanism which is present in many astrophysical environments and can help explain some of the unknown spectral features at 3.55 keV.In the last decade, excitation and photoionization have also been investigated by exposing HCI trapped in an EBIT to intense, monochromatic radiation from free-electron lasers and synchrotron sources. Here, advanced monochromators in powerful undulator beamlines allowed us to work at photon energies from 50 eV to 15 keV while resolving the natural linewidths of x-ray transitions like the Kα complex of Fe up to the highest charge states, and to measure the oscillator strengths of, e. g., the neonlike Fe16+ spectrum. Photoionization studies have been performed for those species as well. Very recently, our novel compact EBIT with an off-axis electron gun allows for simultaneously using the photon beam downstream, enabling exact wavelength determinations referenced to HCI with accurately calculable transitions. We have performed a recalibration of the molecular and atomic oxygen soft x-ray absorption lines in the 500 eV range with an uncertainty estimate of 30 meV. This revealed a 600 meV calibration error that propagated through the literature for decades with the consequence of a 200 km/s misfit of the velocity in interstellar oxygen absorbers. Other possibilities for the compact EBIT are investigations of resonant photorecombination processes with excellent energy resolution. With the

First experiments with the Greifswald electron-beam ion trap

Science.gov (United States)

Schabinger, B.; Biedermann, C.; Gierke, S.; Marx, G.; Radtke, R.; Schweikhard, L.

2013-09-01

The former Berlin electron-beam ion trap (EBIT) was moved to Greifswald. In addition to x-ray studies the setup will be used for the investigation of interaction processes between highly charged ions and atomic clusters such as charge exchange and fragmentation. The EBIT setup has now been reassembled and highly charged ions have been produced from Xe-Ar gas mixtures to study the ‘sawtooth effect’. In addition, the layout of the extraction beamline, the interaction region and product analysis for interaction studies with highly charged ions are presented.

Radiation damage in nonmetallic solids under dense electronic excitation

International Nuclear Information System (INIS)

Itoh, Noriaki; Tanimura, Katsumi; Nakai, Yasuo

1992-01-01

Basic processes of radiation damage of insulators by dense electronic excitation are reviewed. First it is pointed out that electronic excitation of nonmetallic solids produces the self-trapped excitons and defect-related metastable states having relatively long lifetimes, and that the excitation of these metastable states, produces stable defects. The effects of irradiation with heavy ions, including track registration, are surveyed on the basis of the microscopic studies. It is pointed out also that the excitation of the metastable states plays a role in laser-induced damage at relatively low fluences, while the laser damage has been reported to be governed by heating of free electrons produced by multiphoton excitation. Difference in the contributions of the excitation of metastable defects to laser-induced damage of surfaces, or laser ablation, and laser-induced bulk damage is stressed. (orig.)

RF-Trapped Chip Scale Helium Ion Pump (RFT-CHIP)

Science.gov (United States)

2016-04-06

utilizes two operation states: an ion extraction state and an RF electron trapping state. A high power RF switch S1 (RF- LAMBDA RFSP2TRDC06G, DC-6 GHz...integrated in time. The electric potential is obtained by solution of Poisson’s equation using an incomplete LU BiConjugate Gradient sparse matrix

Effects of the radial electric field on confinement and trapping for non collisional electrons in TJ-II

International Nuclear Information System (INIS)

Guasp, J.; Liniers, M.

1998-01-01

The effects of radial electric fields on the non collisional losses, asymmetries at plasma border and on the Vacuum Vessel and trapping fractions for 0.1 1 KeV electrons in TJ-II are analysed. This study complements a series, already published, for ions, therefore only the main differences are stressed. Many of these effect are similar for electrons and ions, mainly the drastic decrease of losses with the electric field, the increasing peripherical loss concentration, the strong accumulation on the Hard Core (HC), the modification in the direction of the induced poloidal rotation, similar angular distributions for trapped particles, etc. Nevertheless, there appear also important differences, that in many cases are originated by the higher electron mobility, in particular a higher sensitivity to the electric field, as well to the intensity as to the sign, producing a faster drop in electron losses for positive potential and a higher asymmetry in the sign dependence. Most of these electron losses exit through the upper side of the plasma, the opposite happens for ions. The strong concentration on the HC appears, many, on the PL-1 plate (the one that is placed upside for toroidal angle φ=0 degree centigree), instead of the opposite PL-2 plate for ions.Finally, for the analysed energy range, there is no variation of electron trapping with the potential nor resonant effect. (Author) 8 refs

Electron trapping in the electrosound solitary wave for propagation of high intensity laser in a relativistic plasma

International Nuclear Information System (INIS)

Heidari, E; Aslaninejad, M; Eshraghi, H

2010-01-01

Using a set of relativistic equations for plasmas with warm electrons and cold ions, we have investigated the effects of trapped electrons in the propagation of an electrosound wave and discussed the possibility of the formation of electromagnetic solitons in a plasma. The effective potential energy and deviations of the electron and ion number densities in this relativistic model have been found. We have obtained the governing equations for the amplitude of the HF field with relativistic corrections. In order to show the destructive impact of the trapped electrons on the solitary wave, a relativistic effective potential and the governing equation have been found. It is shown that for certain values of the parameters the condition of localization of the HF amplitude is violated. In addition, it is shown that as the flow velocity of the plasma changes, the shape of the solitary wave shows two opposing behaviours, depending on whether the solitary wave velocity is larger than the flow velocity or smaller. Also, the existence of stationary solitary waves which are prohibited for nonrelativistic plasma has been predicted. Finally, we have obtained the Korteweg-de Vries equation showing the relativistic, trapping and nonlinearity effects.

Electronic states in a quantum lens

International Nuclear Information System (INIS)

Rodriguez, Arezky H.; Trallero-Giner, C.; Ulloa, S. E.; Marin-Antuna, J.

2001-01-01

We present a model to find analytically the electronic states in self-assembled quantum dots with a truncated spherical cap (''lens'') geometry. A conformal analytical image is designed to map the quantum dot boundary into a dot with semispherical shape. The Hamiltonian for a carrier confined in the quantum lens is correspondingly mapped into an equivalent operator and its eigenvalues and eigenfunctions for the corresponding Dirichlet problem are analyzed. A modified Rayleigh-Schro''dinger perturbation theory is presented to obtain analytical expressions for the energy levels and wave functions as a function of the spherical cap height b and radius a of the circular cross section. Calculations for a hard wall confinement potential are presented, and the effect of decreasing symmetry on the energy values and eigenfunctions of the lens-shape quantum dot is studied. As the degeneracies of a semicircular geometry are broken for b≠a, our perturbation approach allows tracking of the split states. Energy states and electronic wave functions with m=0 present the most pronounced influence on the reduction of the lens height. The method and expressions presented here can be straightforwardly extended to deal with more general Hamiltonians, including strains and valence-band coupling effects in Group III--V and Group II--VI self-assembled quantum dots

Continuous-measurement-enhanced self-trapping of degenerate ultracold atoms in a double well: Nonlinear quantum Zeno effect

International Nuclear Information System (INIS)

Li Weidong; Liu Jie

2006-01-01

In the present paper we investigate the influence of measurements on the quantum dynamics of degenerate Bose atoms gases in a symmetric double well. We show that continuous measurements enhance asymmetry on the density distribution of the atoms and broaden the parameter regime for self-trapping. We term this phenomenon as nonlinear quantum Zeno effect in analog to the celebrated Zeno effect in a linear quantum system. Under discontinuous measurements, the self-trapping due to the atomic interaction in the degenerate bosons is shown to be destroyed completely. Underlying physics is revealed and possible experimental realization is discussed

Regimes of radiative and nonradiative transitions in transport through an electronic system in a photon cavity reaching a steady state

Science.gov (United States)

Gudmundsson, Vidar; Jonsson, Thorsteinn H.; Bernodusson, Maria Laura; Abdullah, Nzar Rauf; Sitek, Anna; Goan, Hsi-Sheng; Tang, Chi-Shung; Manolescu, Andrei

2017-01-01

We analyze how a multilevel many-electron system in a photon cavity approaches the steady state when coupled to external leads. When a plunger gate is used to lower cavity photon dressed one- and two-electron states below the bias window defined by the external leads, we can identify one regime with nonradiative transitions dominating the electron transport, and another regime with radiative transitions. Both transitions trap the electrons in the states below the bias bringing the system into a steady state. The order of the two regimes and their relative strength depends on the location of the bias window in the energy spectrum of the system and the initial conditions.

Design and Fabrication of Cryostat Interface and Electronics for High Performance Antimatter Trap (HI-PAT)

Science.gov (United States)

Smith, Gerald A.

1999-01-01

Included in Appendix I to this report is a complete set of design and assembly schematics for the high vacuum inner trap assembly, cryostat interfaces and electronic components for the MSFC HI-PAT. Also included in the final report are summaries of vacuum tests, and electronic tests performed upon completion of the assembly.

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

Science.gov (United States)

He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

2018-05-30

Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

Changes in the surface electronic states of semiconductor fine particles induced by high energy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Yamaki, Tetsuya; Asai, Keisuke; Ishigure, Kenkichi [Tokyo Univ. (Japan); Shibata, Hiromi

1997-03-01

The changes in the surface electronic states of Q-sized semiconductor particles in Langmuir-Blodgett (LB) films, induced by high energy ion irradiation, were examined by observation of ion induced emission and photoluminescence (PL). Various emission bands attributed to different defect sites in the band gap were observed at the initial irradiation stage. As the dose increased, the emissions via the trapping sites decreased in intensity while the band-edge emission developed. This suggests that the ion irradiation would remove almost all the trapping sites in the band gap. The low energy emissions, which show a multiexponential decay, were due to a donor-acceptor recombination between the deeply trapped carriers. It was found that the processes of formation, reaction, and stabilization of the trapping sites would predominantly occur under the photooxidizing conditions. (author)

Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon

International Nuclear Information System (INIS)

Sah, C.; Sun, J.Y.; Tzou, J.J.

1983-01-01

After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200 0 C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons

Extreme ultra-violet emission spectroscopy of highly charged gadolinium ions with an electron beam ion trap

International Nuclear Information System (INIS)

Ohashi, Hayato; Nakamura, Nobuyuki; Sakaue, Hiroyuki A

2013-01-01

We present extreme ultra-violet emission spectra of highly charged gadolinium ions obtained with an electron beam ion trap at electron energies of 0.53–1.51 keV. The electron energy dependence of the spectra in the 5.7–11.3 nm range is compared with calculation with the flexible atomic code. (paper)

Nonextensive statistical mechanics approach to electron trapping in degenerate plasmas

Science.gov (United States)

Mebrouk, Khireddine; Gougam, Leila Ait; Tribeche, Mouloud

2016-06-01

The electron trapping in a weakly nondegenerate plasma is reformulated and re-examined by incorporating the nonextensive entropy prescription. Using the q-deformed Fermi-Dirac distribution function including the quantum as well as the nonextensive statistical effects, we derive a new generalized electron density with a new contribution proportional to the electron temperature T, which may dominate the usual thermal correction (∼T2) at very low temperatures. To make the physics behind the effect of this new contribution more transparent, we analyze the modifications arising in the propagation of ion-acoustic solitary waves. Interestingly, we find that due to the nonextensive correction, our plasma model allows the possibility of existence of quantum ion-acoustic solitons with velocity higher than the Fermi ion-sound velocity. Moreover, as the nonextensive parameter q increases, the critical temperature Tc beyond which coexistence of compressive and rarefactive solitons sets in, is shifted towards higher values.

Triplet Transport to and Trapping by Acceptor End Groups on Conjugated Polyfluorene Chains

Energy Technology Data Exchange (ETDEWEB)

Sreearunothai, P.; Miller, J.; Estrada, A.; Asaoka, S.; Kowalczyk, M.; Jang, S.; Cook, A.R.; Preses, J.M.

2011-08-31

Triplet excited states created in polyfluorene (pF) molecules having average lengths up to 170 repeat units were transported to and captured by trap groups at the ends in less {approx}40 ns. Almost all of the triplets attached to the chains reached the trap groups, ruling out the presence of substantial numbers of defects that prevent transport. The transport yields a diffusion coefficient D of at least 3 x 10{sup -4} cm{sup 2} s{sup -1}, which is 30 times typical molecular diffusion and close to a value for triplet transport reported by Keller (J. Am. Chem. Soc.2011, 133, 11289-11298). The triplet states were created in solution by pulse radiolysis; time resolution was limited by the rate of attachment of triplets to the pF chains. Naphthylimide (NI) or anthraquinone (AQ) groups attached to the ends of the chains acted as traps for the triplets, although AQ would not have been expected to serve as a trap on the basis of triplet energies of the separate molecules. The depths of the NI and AQ triplet traps were determined by intermolecular triplet transfer equilibria and temperature dependence. The trap depths are shallow, just a few times thermal energy for both, so a small fraction of the triplets reside in the pF chains in equilibrium with the end-trapped triplets. Trapping by AQ appears to arise from charge transfer interactions between the pF chains and the electron-accepting AQ groups. Absorption bands of the end-trapped triplet states are similar in peak wavelength (760 nm) and shape to the 760 nm bands of triplets in the pF chains but have reduced intensities. When an electron donor, N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD), is added to the solution, it reacts with the end-trapped triplets to remove the 760 nm bands and to make the trapping irreversible. New bands created upon reaction with TMPD may be due to charge transfer states.

Two-dimensional spatial structure of the dissipative trapped-electron mode

International Nuclear Information System (INIS)

Rewoldt, G.; Tang, W.M.; Frieman, E.A.

1976-09-01

This paper deals with the complete two-dimensional structure of the dissipative trapped-electron mode over its full width, which may extend over several mode-rational surfaces. The complete integro-differential equation is studied in the limit k/sub r/rho/sub i/ less than 1, where rho/sub i/ is the ion gyroradius, and k/sub r/, the radial wavenumber, is regarded as a differential operator. This is converted into a matrix equation which is then solved by standard numerical methods

Low temperature luminescence and charge carrier trapping in a cryogenic scintillator Li{sub 2}MoO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Spassky, D.A., E-mail: deris2002@mail.ru [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Nagirnyi, V. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Savon, A.E. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Kamenskikh, I.A. [Physics Faculty, Moscow State University, 119991 Moscow (Russian Federation); Barinova, O.P.; Kirsanova, S.V. [D. Mendeleyev University of Chemical Technology of Russia, 125047 Moscow (Russian Federation); Grigorieva, V.D.; Ivannikova, N.V.; Shlegel, V.N. [Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation); Aleksanyan, E. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); A.Alikhanyan National Science Laboratory, 2 Br. Alikhanyan Str., 0036 Yerevan (Armenia); Yelisseyev, A.P. [Sobolev Institute of Geology and Mineralogy, SB RAS, 630090 Novosibirsk (Russian Federation); Belsky, A. [Institute of Light and Matter, CNRS, University Lyon1, 69622 Villeurbanne (France)

2015-10-15

The luminescence and optical properties of promising cryogenic scintillator Li{sub 2}MoO{sub 4} were studied in the temperature region of 2–300 K. The data on luminescence spectra and decay characteristics, excitation spectra, thermostimulated luminescence curves and spectra as well as transmission and reflectivity spectra are presented for the single crystals grown by two different procedures, the conventional Czochralski method and the low-temperature gradient Czochralski technique. The bandgap of Li{sub 2}MoO{sub 4} is estimated from the analysis of transmission, luminescence excitation and reflectivity spectra. Up to three luminescence bands with the maxima at 1.98, 2.08 and 2.25 eV are detected in the emission spectra of crystals and their origin is discussed. In the thermoluminescence curves of both studied crystals, two high-intensity peaks were observed at 22 and 42 K, which are ascribed to the thermal release of self-trapped charge carriers. The coexistence of self-trapped electrons and holes allows one to explain the poor scintillation light yield of Li{sub 2}MoO{sub 4} at low temperatures. - Highlights: • Single crystals of Li{sub 2}MoO{sub 4} were grown by two methods. • The transparency cutoff (~4.3 eV) and bandgap values (<4.9 eV) are estimated. • The emission 2.08 eV is ascribed to self-trapped excitons and quenches at T>7 K. • Shallow traps considerably influence the energy transfer to emission centres. • Co-existence of self-trapped holes and electrons results in a low light yield.

Kβ spectra of heliumlike chromium from an electron-beam ion trap

International Nuclear Information System (INIS)

Decaux, V.; Beiersdorfer, P.; Elliott, S.; Osterheld, A.

1993-01-01

Kβ spectra of heliumlike chromium have been recorded using the Livermore electron-beam ion trap (EBIT) with a high-resolution Bragg crystal spectrometer in the von Hamos configuration, in the wavelong range from 1.870 Angstrom. Measurements have been made both for direct excitation at an electron beam energy of 8 k and dielectronic recombination around the KLM resonance energy of 5 keV. In order to evaluate the resonance strength the lithiumlike dielectronic satellites, we used a data routine technique to accumulate spectra at 15 different beam energies between 4.96 and 5.28 keV. Results are compared to theoretical calculations using the multiconfiguration parametric potential method

Computation of transverse muon-spin relaxation functions including trapping-detrapping reactions, with application to electron-irradiated tantalum

International Nuclear Information System (INIS)

Doering, K.P.; Aurenz, T.; Herlach, D.; Schaefer, H.E.; Arnold, K.P.; Jacobs, W.; Orth, H.; Haas, N.; Seeger, A.; Max-Planck-Institut fuer Metallforschung, Stuttgart

1986-01-01

A new technique for the economical evaluation of transverse muon spin relaxation functions in situations involving μ + trapping at and detrapping from crystal defects is applied to electron-irradiated Ta exhibiting relaxation maxima at about 35 K, 100 K, and 250 K. The long-range μ + diffusion is shown to be limted by traps over the entire temperature range investigated. The (static) relaxation rates for several possible configurations of trapped muons are discussed, including the effect of the simultaneous presence of a proton in a vacancy. (orig.)

Two Schemes for Generation of Entanglement for Vibronic Collective States of Multiple Trapped Ions

International Nuclear Information System (INIS)

Yang Wenxing; Li Jiahua; Zheng Anshou

2007-01-01

We propose two schemes to prepare entanglement for the vibronic collective states of multiple trapped ions. The first scheme aims to generating multipartite entanglement for vibrational modes of trapped ions, which only requires a single laser beam tuned to the ionic carrier frequency. Our scheme works in the mediated excitation regime, in which the corresponding Rabi frequency is equal to the trap frequency. Beyond their fundamental importance, these states may be of interest for experimental studies on decoherence since the present scheme operates in a fast way. The second scheme aims to preparing the continuous variable multimode maximally Greenberger-Horne-Zeilinger state. The distinct advantage is that the operation time is only limited by the available laser intensity, not by the inherent mechanisms such as off-resonant excitations. This makes it promising to obtain entanglement of multiple coherent and squeezing states with desired amplitudes in a reasonable time.

About stability of levitating states of superconducting myxini of plasma traps-galateas

International Nuclear Information System (INIS)

Bishaev, A.M.; Bush, A.A.; Denis'uk, A.I.; D'yakonitsa, O.Y.; Kamentsev, K.Y.; Kozintseva, M.V.; Kolesnikova, T.G.; Shapovalov, M.M.; Voronchenko, S.A.; Gavrikov, M.B.; Savelyev, V.V.; Smirnov, P.G.

2015-01-01

To develop a plasma trap with levitating superconducting magnetic coils it is necessary to carry out the search of their stable levitating states. With this purpose, based upon the superconductor property to conserve the trapped magnetic flux, in the uniform gravitational field the analytical dependence of the potential energy of one or two superconducting rings, having trapped the given magnetic fluxes, in the field of the fixed ring with the constant current from the coordinates of the free rings and the deflection angle of their axes from the common axis of the magnetic system has been obtained in the thin ring approximation. Under magnetic fluxes of the same polarity in coils the existence of the found from the calculations equilibrium levitating states for the manufactured HTSC rings stable relative to the vertical shifts of levitating rings and to the deflection angle of their axes from the vertical has been confirmed experimentally

A quasi-electrostatic trap for neutral atoms

International Nuclear Information System (INIS)

Engler, H.

2000-01-01

This thesis reports on the realization of a ''quasi-electrostatic trap'' (QUEST) for neutral atoms. Cesium ( 133 Cs) and Lithium ( 7 Li) atoms are stored, which represents for the first time a mixture of different species in an optical dipole trap. The trap is formed by the focused Gaussian beam of a 30 W cw CO 2 -laser. For a beam waist of 108 μm the resulting trap depth is κ B x 118 μK for Cesium and κ B x 48 μK for Lithium. We transfer up to 2 x 10 6 Cesium and 10 5 Lithium atoms from a magneto-optical trap into the QUEST. When simultaneously transferred, the atom number currently is reduced by roughly a factor of 10. Since photon scattering from the trapping light can be neglected, the QUEST represents an almost perfect conservative trapping potential. Atoms in the QUEST populate the electronic ground state sublevels. Arbitrary sublevels can be addressed via optical pumping. Due to the very low background gas pressure of 2 x 10 -11 mbar storage times of several minutes are realized. Evaporative cooling of Cesium is observed. In addition, laser cooling is applied to the trapped Cesium sample, which reduces the temperature from 25 μK to a value below 7 μK. If prepared in the upper hyper-fine ground state sublevel, spin changing collisions are observed not only within one single species, but also between the two different species. The corresponding relaxation rates are quantitatively analyzed. (orig.)

Trapping Dynamics in Photosystem I-Light Harvesting Complex I of Higher Plants Is Governed by the Competition Between Excited State Diffusion from Low Energy States and Photochemical Charge Separation.

Science.gov (United States)

Molotokaite, Egle; Remelli, William; Casazza, Anna Paola; Zucchelli, Giuseppe; Polli, Dario; Cerullo, Giulio; Santabarbara, Stefano

2017-10-26

The dynamics of excited state equilibration and primary photochemical trapping have been investigated in the photosystem I-light harvesting complex I isolated from spinach, by the complementary time-resolved fluorescence and transient absorption approaches. The combined analysis of the experimental data indicates that the excited state decay is described by lifetimes in the ranges of 12-16 ps, 32-36 ps, and 64-77 ps, for both detection methods, whereas faster components, having lifetimes of 550-780 fs and 4.2-5.2 ps, are resolved only by transient absorption. A unified model capable of describing both the fluorescence and the absorption dynamics has been developed. From this model it appears that the majority of excited state equilibration between the bulk of the antenna pigments and the reaction center occurs in less than 2 ps, that the primary charge separated state is populated in ∼4 ps, and that the charge stabilization by electron transfer is completed in ∼70 ps. Energy equilibration dynamics associated with the long wavelength absorbing/emitting forms harbored by the PSI external antenna are also characterized by a time mean lifetime of ∼75 ps, thus overlapping with radical pair charge stabilization reactions. Even in the presence of a kinetic bottleneck for energy equilibration, the excited state dynamics are shown to be principally trap-limited. However, direct excitation of the low energy chlorophyll forms is predicted to lengthen significantly (∼2-folds) the average trapping time.

Trapping of slow recoil ions: past results and speculations on the future

International Nuclear Information System (INIS)

Prior, M.H.

1983-01-01

A simple electrostatic ion trap has been utilized to capture low energy recoil ions made by fast heavy ion impact upon a neon gas target. The heavy ion beams have been provided by the LBL SuperHILAC and the work has so far concentrated upon studies of the decay of the trapped ion population in time following creation by the pulsed HILAC beam (3.3 msec pulse length, 36Hz repetition rate). The various charge states decay predominantly via electron capture collisions with the ambient gas in the ion trap. By varying the gas composition and density, one can determine the electron capture rate constants from which an effective (velocity averaged) capture cross-section can be obtained. The uniqueness of this work lies in the high charge states, up to Ne 10 + (fully stripped), and the low mean collision energies available (in the range 1.0 to 70.0 eV)

Photoionization of radiation-induced traps in quartz and alkali feldspars.

Science.gov (United States)

Hütt, G; Jaek, I; Vasilchenko, V

2001-01-01

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction.

Photoionization of radiation-induced traps in quartz and alkali feldspars

International Nuclear Information System (INIS)

Huett, G.; Jaek, I.; Vasilchenko, V.

2001-01-01

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction

Photoionization of radiation-induced traps in quartz and alkali feldspars

Energy Technology Data Exchange (ETDEWEB)

Huett, G. E-mail: hutt@pdos.gi.ee; Jaek, I.; Vasilchenko, V

2001-01-15

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction.

ESR study on free radicals trapped in crosslinked polytetrafluoroethylene (PTFE)

International Nuclear Information System (INIS)

Oshima, Akihiro; Tabata, Yoneho; Seguchi, Tadao

1997-01-01

Free radicals in crosslinked PTFE which formed by 60 Co γ-rays irradiation at 77 K and at room temperature were studied by electron spin resonance (ESR) spectroscopy. The crosslinked PTFE specimens with different crosslinking density were prepared by electron beam irradiation in the molten state. The ESR spectra observed in the irradiated crosslinked PTFE are much different from those in non-crosslinked PTFE (virgin); a broad singlet component increases with increasing the crosslinking density, G-value of radicals is much higher in crosslinked PTFE than in non-crosslinked one. Free radicals related to the broad component are trapped in the non-crystalline region of crosslinked PTFE and rather stable at room temperature, whereas radicals trapped in amorphous non-crosslinked PTFE are unstable at room temperature. It is thought that most of free radicals trapped in the crosslinked PTFE are formed in the crosslinked amorphous region. The trapped radicals decays around 383 K (110 o C) due to the molecular motion of α-relaxation. (Author)

Confinement in a cryogenic Penning trap of highest charge state ions from EBIT

International Nuclear Information System (INIS)

Schneider, D.

1994-01-01

The retrapping of highly charged Xe 44+ and Th 68+,72+ ions extracted from an open-quotes Electron Beam Ion Trapclose quotes (EBIT) is demonstrated after injection of the ions into RETRAP, a cryogenic Penning trap (up to 6 Tesla magnetic field) currently with an open cylinder design. Ion extraction in a short pulse (5-20 μsec) from EBIT, essential for efficient retrapping, is employed. The ions are slowed down upon entering a deceleration tube mounted above the trap within the magnetic field. The potential is then rapidly (100 ns) decreased, enabling low energy ions to enter the trap. Capture efficiencies up to 25% are observed via detection of the delayed ion release pulse with a detector below the trap. Signal voltages induced in a tuned circuit due to single and multiple ions have been observed by tuning the ion resonant axial oscillation frequencies for different ions. Results from transporting and retrapping of the ions, as well as their detection, are described and the trapping efficiency is discussed, The motivation for these studies is to cool the trapped very highly charged ions to low temperatures (< 4 K) in order to perform ultrahigh resolution precision spectroscopy, collision studies at ultra low energies and to observe phase transitions in Coulomb clusters of highly charged ions

Fast Ground State Manipulation of Neutral Atoms in Microscopic Optical Traps

International Nuclear Information System (INIS)

Yavuz, D.D.; Kulatunga, P.B.; Urban, E.; Johnson, T.A.; Proite, N.; Henage, T.; Walker, T.G.; Saffman, M.

2006-01-01

We demonstrate Rabi flopping at MHz rates between ground hyperfine states of neutral 87 Rb atoms that are trapped in two micron sized optical traps. Using tightly focused laser beams we demonstrate high fidelity, site specific Rabi rotations with cross talk on neighboring sites separated by 8 μm at the level of 10 -3 . Ramsey spectroscopy is used to measure a dephasing time of 870 μs, which is ≅5000 times longer than the time for a π/2 pulse

Dissipative dust-acoustic shock waves in a varying charge electronegative magnetized dusty plasma with trapped electrons

Energy Technology Data Exchange (ETDEWEB)

Bacha, Mustapha [Faculty of Physics, Theoretical Physics Laboratory, Plasma Physics Group, University of Bab-Ezzouar, USTHB, B.P. 32, El Alia, Algiers 16111 (Algeria); Tribeche, Mouloud, E-mail: mouloudtribeche@yahoo.fr, E-mail: mtribeche@usthb.dz [Faculty of Physics, Theoretical Physics Laboratory, Plasma Physics Group, University of Bab-Ezzouar, USTHB, B.P. 32, El Alia, Algiers 16111 (Algeria); Algerian Academy of Sciences and Technologies, Algiers (Algeria)

2016-08-15

The combined effects of an oblique magnetic field and electron trapping on dissipative dust-acoustic waves are examined in varying charge electronegative dusty plasmas with application to the Halley Comet plasma (∼10{sup 4} km from the nucleus). A weakly nonlinear analysis is carried out to derive a modified Korteweg-de Vries-Burger-like equation. Making use of the equilibrium current balance equation, the physically admissible values of the electron trapping parameter are first constrained. We then show that the Burger dissipative term is solely due to the dust charge variation process. It is found that an increase of the magnetic field obliqueness or a decrease of its magnitude renders the shock structure more dispersive.

Stationary solutions and self-trapping in discrete quadratic nonlinear systems

DEFF Research Database (Denmark)

Bang, Ole; Christiansen, Peter Leth; Clausen, Carl A. Balslev

1998-01-01

We consider the simplest equations describing coupled quadratic nonlinear (chi((2))) systems, which each consists of a fundamental mode resonantly interacting with its second harmonic. Such discrete equations apply, e.g., to optics, where they can describe arrays of chi((2)) waveguides...... the nonintegrable dimer reduce to the discrete nonlinear Schrodinger (DNLS) equation with two degrees of freedom, which is integrable. We show how the stationary solutions to the two systems correspond to each other and how the self-trapped DNLS solutions gradually develop chaotic dynamics in the chi((2)) system...

Spectroscopy with trapped highly charged ions

International Nuclear Information System (INIS)

Beiersdorfer, Peter

2009-01-01

We give an overview of atomic spectroscopy performed on electron beam ion traps at various locations throughout the world. Spectroscopy at these facilities contributes to various areas of science and engineering, including but not limited to basic atomic physics, astrophysics, extreme ultraviolet lithography, and the development of density and temperature diagnostics of fusion plasmas. These contributions are accomplished by generating, for example, spectral surveys, making precise radiative lifetime measurements, accounting for radiative power emitted in a given wavelength band, illucidating isotopic effects, and testing collisional-radiative models. While spectroscopy with electron beam ion traps had originally focused on the x-ray emission from highly charged ions interacting with the electron beam, the operating modes of such devices have expanded to study radiation in almost all wavelength bands from the visible to the hard x-ray region; and at several facilities the ions can be studied even in the absence of an electron beam. Photon emission after charge exchange or laser excitation has been observed; and the work is no longer restricted to highly charged ions. Much of the experimental capabilities are unique to electron beam ion traps, and the work performed with these devices cannot be undertaken elsewhere. However, in other areas the work on electron beam ion traps rivals the spectroscopy performed with conventional ion traps or heavy-ion storage rings. The examples we present highlight many of the capabilities of the existing electron beam ion traps and their contributions to physics.

Potential curves and spectroscopic study of the electronic states of the molecular ion LiCs+

International Nuclear Information System (INIS)

Moughrabi, A.; Korek, M.; Allouche, A.R.

2004-01-01

Full text.Due to a very accurate high-resolution techniques and to the spectacular developments in ultracold alkali atom trapping developments which are at the root of photo association spectroscopy there has been a renewed interest on the spectroscopic study of alkali dimers. The existence of new experimental data on these species has stimulated theoretical approaches, necessary to provide predictions accurate enough to be useful for interpretation and evenly for guidance of experiments. With the aim of improving the accuracy of predictions we will perform a theoretical study of the electronic structure of the molecular ion LiCs + , using a method mainly in the way by which core-valence effects are taken into account. To investigate the electronic structure of LiCs + we will use the package CIPSI (Configuration Interaction by Perturbation of a multiconfiguration wave function Selected Interactively) of the Laboratoire de Physique Quantique (Toulouse, France). The atoms Li and Cs will be treated through non-empirical effective one electron core potentials of Durand and Barthelat type. Molecular orbitals for LiCs + will be derived from Self Consistent Field Calculations (SCF) and full valence Configuration Interaction (IC) calculations. A core-core interaction more elaborated than the usual approximation 1/R will be taken into account as the sum of an exponential repulsive term plus a long range dispersion term approximated by the well known London formula. Potential energy calculations will be performed for different molecular states, for numerous values of the inter-nuclear distance R in a wide range. Spectroscopic constants have been derived for the bound states with a regular shape A ro vibrational study have been performed for the ground states with a calculation of the rotational and centrifugal distortion constants. A calculation for the transition dipole moment and matrix elements have been done for the bound states

Phase-Space Density Analysis of the AE-8 Traped Electron and the AP-8 Trapped Proton Model Environments

Energy Technology Data Exchange (ETDEWEB)

Thomas E. Cayton

2005-08-01

The AE-8 trapped electron and the AP-8 trapped proton models are used to examine the L-shell variation of phase-space densities for sets of transverse (or 1st) invariants, {mu}, and geometrical invariants, K (related to the first two adiabatic invariants). The motivation for this study is twofold: first, to discover the functional dependence of the phase-space density upon the invariants; and, second, to explore the global structure of the radiation belts within this context. Variation due to particle rest mass is considered as well. The overall goal of this work is to provide a framework for analyzing energetic particle data collected by instruments on Global Positioning System (GPS) spacecraft that fly through the most intense region of the radiation belt. For all considered values of {mu} and K, and for 3.5 R{sub E} < L < 6.5 R{sub E}, the AE-8 electron phase-space density increases with increasing L; this trend--the expected one for a population diffusing inward from an external source--continues to L = 7.5 R{sub E} for both small and large values of K but reverses slightly for intermediate values of K. The AP-8 proton phase-space density exhibits {mu}-dependent local minima around L = 5 R{sub E}. Both AE-8 and AP-8 exhibit critical or cutoff values for the invariants beyond which the flux and therefore the phase-space density vanish. For both electrons and protons, these cutoff values vary systematically with magnetic moment and L-shell and are smaller than those estimated for the atmospheric loss cone. For large magnetic moments, for both electrons and protons, the K-dependence of the phase-space density is exponential, with maxima at the magnetic equator (K = 0) and vanishing beyond a cutoff value, K{sub c}. Such features suggest that momentum-dependent trapping boundaries, perhaps drift-type loss cones, serve as boundary conditions for trapped electrons as well as trapped protons.

EPR study of electron traps in x-ray-irradiated yttria-stabilized zirconia

International Nuclear Information System (INIS)

Azzoni, C.B.; Paleari, A.

1989-01-01

Single crystals of yttria-stabilized zirconia (12 mol % of Y 2 O 3 ) have been x-ray irradiated at room temperature. The electron paramagnetic resonance spectrum of the filled electron traps is analyzed in terms of a single oxygen vacancy type of defect with its symmetry axis along the left-angle 111 right-angle direction. The angular dependence of the linewidth and the asymmetry of the line shape are attributed to the disordered rearrangements of the anion sublattice surrounding the oxygen vacancy. This affects the local crystal fields and the directions of the symmetry axis of the defects

EPR study of electron traps in x-ray-irradiated yttria-stabilized zirconia

Energy Technology Data Exchange (ETDEWEB)

Azzoni, C.B.; Paleari, A. (Dipartimento di Fisica, Alessandro Volta dell' Universita di Pavia, via Bassi 6, 27100 Pavia, Italy (IT))

1989-10-01

Single crystals of yttria-stabilized zirconia (12 mol % of Y{sub 2}O{sub 3}) have been x-ray irradiated at room temperature. The electron paramagnetic resonance spectrum of the filled electron traps is analyzed in terms of a single oxygen vacancy type of defect with its symmetry axis along the {l angle}111{r angle} direction. The angular dependence of the linewidth and the asymmetry of the line shape are attributed to the disordered rearrangements of the anion sublattice surrounding the oxygen vacancy. This affects the local crystal fields and the directions of the symmetry axis of the defects.

Coherent oscillations between two weakly coupled Bose-Einstein condensates: Josephson effects, π oscillations, and macroscopic quantum self-trapping

International Nuclear Information System (INIS)

Raghavan, S.; Smerzi, A.; Fantoni, S.; Shenoy, S.R.

2001-03-01

We discuss the coherent atomic oscillations between two weakly coupled Bose-Einstein condensates. The weak link is provided by a laser barrier in a (possibly asymmetric) double-well trap or by Raman coupling between two condensates in different hyperfine levels. The boson Josephson junction (BJJ) dynamics is described by the two-mode nonlinear Gross-Pitaevskii equation that is solved analytically in terms of elliptic functions. The BJJ, being a neutral, isolated system, allows the investigations of dynamical regimes for the phase difference across the junction and for the population imbalance that are not accessible with superconductor Josephson junctions (SJJ's). These include oscillations with either or both of the following properties: (i) the time-averaged value of the phase is equal to π (π-phase oscillations); (ii) the average population imbalance is nonzero, in states with macroscopic quantum self-trapping. The (nonsinusoidal) generalization of the SJJ ac and plasma oscillations and the Shapiro resonance can also be observed. We predict the collapse of experimental data (corresponding to different trap geometries and the total number of condensate atoms) onto a single universal curve for the inverse period of oscillations. Analogies with Josephson oscillations between two weakly coupled reservoirs of 3 He-B and the internal Josephson effect in 3 He-A are also discussed. (author)

Nonlocal effects in a bounded low-temperature plasma with fast electrons

International Nuclear Information System (INIS)

DeJoseph, C. A. Jr.; Demidov, V. I.; Kudryavtsev, A. A.

2007-01-01

Effects associated with nonlocality of the electron energy distribution function (EEDF) in a bounded, low-temperature plasma containing fast electrons, can lead to a significant increase in the near-wall potential drop, leading to self-trapping of fast electrons in the plasma volume, even if the density of this group is only a small fraction (∼0.001%) of the total electron density. If self-trapping occurs, the fast electrons can substantially increase the rate of stepwise excitation, supply additional heating to slow electrons, and reduce their rate of diffusion cooling. Altering the source terms of these fast electrons will, therefore, alter the near-wall sheath and, through modification of the EEDF, a number of plasma parameters. Self-trapping of fast electrons is important in a variety of plasmas, including hollow-cathode discharges and capacitive rf discharges, and is especially pronounced in an afterglow plasma, which is a key phase of any pulse-modulated discharge. In the afterglow, the electron temperature is less than a few tenths of an electron volt, and the fast electrons will have energies typically greater than an electron volt. It is shown that in the afterglow plasma of noble gases, fast electrons, arising from Penning ionization of metastable atoms, can lead to the above condition and significantly change the plasma and sheath properties. Similar effects can be important in technologically relevant electronegative gas plasmas, where fast electrons can arise due to electron detachment in collisions of negative ions with atomic species. Both experimental and modeling results are presented to illustrate these effects

Trapping and Evolution Dynamics of Ultracold Two-Component Plasmas

International Nuclear Information System (INIS)

Choi, J.-H.; Knuffman, B.; Zhang, X. H.; Povilus, A. P.; Raithel, G.

2008-01-01

We demonstrate the trapping of a strongly magnetized, quasineutral ultracold plasma in a nested Penning trap with a background field of 2.9 T. Electrons remain trapped in this system for several milliseconds. Early in the evolution, the dynamics are driven by a breathing-mode oscillation in the ionic charge distribution, which modulates the electron trap depth. Over longer times scales, the electronic component undergoes cooling. Trap loss resulting from ExB drift is characterized

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

Science.gov (United States)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

High-precision measurement of the electron spin g factor of trapped atomic nitrogen in the endohedral fullerene N@C60

Science.gov (United States)

Wittmann, J. J.; Can, T. V.; Eckardt, M.; Harneit, W.; Griffin, R. G.; Corzilius, B.

2018-05-01

The electronic g factor carries highly useful information about the electronic structure of a paramagnetic species, such as spin-orbit coupling and dia- or paramagnetic (de-)shielding due to local fields of surrounding electron pairs. However, in many cases, a near "spin-only" case is observed, in particular for light elements, necessitating accurate and precise measurement of the g factors. Such measurement is typically impeded by a "chicken and egg situation": internal or external reference standards are used for relative comparison of electron paramagnetic resonance (EPR) Larmor frequencies. However, the g factor of the standard itself usually is subject to a significant uncertainty which directly limits the precision and/or accuracy of the sought after sample g factor. Here, we apply an EPR reference-free approach for determining the g factor of atomic nitrogen trapped within the endohedral fullerene C60:N@C60 in its polycrystalline state by measuring the 1H NMR resonance frequency of dispersing toluene at room temperature. We found a value of g = 2.00204 (4) with a finally reached relative precision of ∼20 ppm. This accurate measurement allows us to directly compare the electronic properties of N@C60 to those found in atomic nitrogen in the gas phase or trapped in other solid matrices at liquid helium temperature. We conclude that spin-orbit coupling in N@C60 at room temperature is very similar in magnitude and of same sign as found in other inert solid matrices and that interactions between the quartet spin system and the C60 molecular orbitals are thus negligible.

Optical Trapping of Ion Coulomb Crystals

Science.gov (United States)

Schmidt, Julian; Lambrecht, Alexander; Weckesser, Pascal; Debatin, Markus; Karpa, Leon; Schaetz, Tobias

2018-04-01

The electronic and motional degrees of freedom of trapped ions can be controlled and coherently coupled on the level of individual quanta. Assembling complex quantum systems ion by ion while keeping this unique level of control remains a challenging task. For many applications, linear chains of ions in conventional traps are ideally suited to address this problem. However, driven motion due to the magnetic or radio-frequency electric trapping fields sometimes limits the performance in one dimension and severely affects the extension to higher-dimensional systems. Here, we report on the trapping of multiple barium ions in a single-beam optical dipole trap without radio-frequency or additional magnetic fields. We study the persistence of order in ensembles of up to six ions within the optical trap, measure their temperature, and conclude that the ions form a linear chain, commonly called a one-dimensional Coulomb crystal. As a proof-of-concept demonstration, we access the collective motion and perform spectrometry of the normal modes in the optical trap. Our system provides a platform that is free of driven motion and combines advantages of optical trapping, such as state-dependent confinement and nanoscale potentials, with the desirable properties of crystals of trapped ions, such as long-range interactions featuring collective motion. Starting with small numbers of ions, it has been proposed that these properties would allow the experimental study of many-body physics and the onset of structural quantum phase transitions between one- and two-dimensional crystals.

Characterisation of retention properties of charge-trapping memory cells at low temperatures

International Nuclear Information System (INIS)

Yurchuk, E; Bollmann, J; Mikolajick, T

2009-01-01

The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more 'shallow' traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

Characterisation of retention properties of charge-trapping memory cells at low temperatures

Science.gov (United States)

Yurchuk, E.; Bollmann, J.; Mikolajick, T.

2009-09-01

The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more "shallow" traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

Broad self-trapped and slow light bands based on negative refraction and interference of magnetic coupled modes

International Nuclear Information System (INIS)

Fang, Yun-tuan; Ni, Zhi-yao; Zhu, Na; Zhou, Jun

2016-01-01

We propose a new mechanism to achieve light localization and slow light. Through the study on the coupling of two magnetic surface modes, we find a special convex band that takes on a negative refraction effect. The negative refraction results in an energy flow concellation effect from two degenerated modes on the convex band. The energy flow concellation effect leads to forming of the self-trapped and slow light bands. In the self-trapped band light is localized around the source without reflection wall in the waveguide direction, whereas in the slow light band, light becomes the standing-waves and moving standing-waves at the center and the two sides of the waveguide, respectively. (paper)

Broad self-trapped and slow light bands based on negative refraction and interference of magnetic coupled modes.

Science.gov (United States)

Fang, Yun-Tuan; Ni, Zhi-Yao; Zhu, Na; Zhou, Jun

2016-01-13

We propose a new mechanism to achieve light localization and slow light. Through the study on the coupling of two magnetic surface modes, we find a special convex band that takes on a negative refraction effect. The negative refraction results in an energy flow concellation effect from two degenerated modes on the convex band. The energy flow concellation effect leads to forming of the self-trapped and slow light bands. In the self-trapped band light is localized around the source without reflection wall in the waveguide direction, whereas in the slow light band, light becomes the standing-waves and moving standing-waves at the center and the two sides of the waveguide, respectively.

Perturbation approach to the self-energy of non-S hydrogenic states

International Nuclear Information System (INIS)

Le Bigot, Eric-Olivier; Jentschura, Ulrich D.; Mohr, Peter J.; Indelicato, Paul; Soff, Gerhard

2003-01-01

We present results on the self-energy correction to the energy levels of hydrogen and hydrogenlike ions. The self-energy represents the largest QED correction to the relativistic (Dirac-Coulomb) energy of a bound electron. We focus on the perturbation expansion of the self-energy of non-S states, and provide estimates of the so-called A 60 perturbation coefficient, which can be viewed as a relativistic Bethe logarithm. Precise values of A 60 are given for many P, D, F, and G states, while estimates are given for other states. These results can be used in high-precision spectroscopy experiments in hydrogen and hydrogenlike ions. They yield the best available estimate of the self-energy correction of many atomic states

The nature and role of trap states in a dendrimer-based organic field-effect transistor explosive sensor

Science.gov (United States)

Tang, Guoqiang; Chen, Simon S. Y.; Lee, Kwan H.; Pivrikas, Almantas; Aljada, Muhsen; Burn, Paul L.; Meredith, Paul; Shaw, Paul E.

2013-06-01

We report the fabrication and charge transport characterization of carbazole dendrimer-based organic field-effect transistors (OFETs) for the sensing of explosive vapors. After exposure to para-nitrotoluene (pNT) vapor, the OFET channel carrier mobility decreases due to trapping induced by the absorbed pNT. The influence of trap states on transport in devices before and after exposure to pNT vapor has been determined using temperature-dependent measurements of the field-effect mobility. These data clearly show that the absorption of pNT vapor into the dendrimer active layer results in the formation of additional trap states. Such states inhibit charge transport by decreasing the density of conducting states.

One-Dimensional Rydberg Gas in a Magnetoelectric Trap

International Nuclear Information System (INIS)

Mayle, Michael; Hezel, Bernd; Lesanovsky, Igor; Schmelcher, Peter

2007-01-01

We study the quantum properties of Rydberg atoms in a magnetic Ioffe-Pritchard trap which is superimposed by a homogeneous electric field. Trapped Rydberg atoms can be created in long-lived electronic states exhibiting a permanent electric dipole moment of several hundred Debye. The resulting dipole-dipole interaction in conjunction with the radial confinement is demonstrated to give rise to an effectively one-dimensional ultracold Rydberg gas with a macroscopic interparticle distance. We derive analytical expressions for the electric dipole moment and the required linear density of Rydberg atoms

Many-body Green’s function theory for electron-phonon interactions: Ground state properties of the Holstein dimer

International Nuclear Information System (INIS)

Säkkinen, Niko; Leeuwen, Robert van; Peng, Yang; Appel, Heiko

2015-01-01

We study ground-state properties of a two-site, two-electron Holstein model describing two molecules coupled indirectly via electron-phonon interaction by using both exact diagonalization and self-consistent diagrammatic many-body perturbation theory. The Hartree and self-consistent Born approximations used in the present work are studied at different levels of self-consistency. The governing equations are shown to exhibit multiple solutions when the electron-phonon interaction is sufficiently strong, whereas at smaller interactions, only a single solution is found. The additional solutions at larger electron-phonon couplings correspond to symmetry-broken states with inhomogeneous electron densities. A comparison to exact results indicates that this symmetry breaking is strongly correlated with the formation of a bipolaron state in which the two electrons prefer to reside on the same molecule. The results further show that the Hartree and partially self-consistent Born solutions obtained by enforcing symmetry do not compare well with exact energetics, while the fully self-consistent Born approximation improves the qualitative and quantitative agreement with exact results in the same symmetric case. This together with a presented natural occupation number analysis supports the conclusion that the fully self-consistent approximation describes partially the bipolaron crossover. These results contribute to better understanding how these approximations cope with the strong localizing effect of the electron-phonon interaction

The effects of electron spiraling on the anisotropy and polarization of photon emission from an electron beam ion trap

International Nuclear Information System (INIS)

Savin, D.W.; Gu, M.F.; Beiersdorfer, P.

1998-01-01

We present a theoretical formalism for calculating the anisotropy and polarization of photon emission due to a spiraling beam of electrons in an electron beam ion trap (EBIT). We present measurements of the polarization for the Fe XXIV 4p 2 P 3/2 → 2s 2 S 1/2 X-ray transition due to electron impact excitation. We discuss these results, together with previously reported EBIT polarization measurements, in the light of electron spiraling. We find that spiraling effects cannot yet be discerned in these measurements. This is important for many EBIT measurements concerned with X-ray line intensity measurements. While the amount of spiraling is not accurately known, neglecting its effects introduces an error typically no larger than that given by counting statistics. (author)

DFT+U study of self-trapping, trapping, and mobility of oxygen-type hole polarons in barium stannate

Science.gov (United States)

Geneste, Grégory; Amadon, Bernard; Torrent, Marc; Dezanneau, Guilhem

2017-10-01

The charge-transfer insulating perovskite oxides currently used as fuel cell electrolytes undergo, at high temperature, an oxidation reaction 1/2 O2(g ) +VO••→OOX+2 h• , that produces oxygen-type holes. Understanding the nature and mobility of these oxygen-type holes is an important step to improve the performance of devices, but presents a theoretical challenge since, in their localized form, they cannot be captured by standard density functional theory. Here, we employ the DFT+U formalism with a Hubbard correction on the p orbitals of oxygen to investigate several properties of these holes, in the particular case of BaSnO3. We describe the small oxygen-type hole polarons, the self-trapping at their origin, and their trapping by trivalent dopants (Ga, Sc, In, Lu, Y, Gd, La). Strong similarities with protonic defects are observed concerning the evolution of the trapping energy with ionic radius of the dopant. Moreover, we show that long-range diffusion of holes is a complex phenomenon, that proceeds by a succession of several mechanisms. However, the standard implementation of DFT+U within the projector augmented-wave (PAW) formalism leads to use very large, unphysical values of U for the O-p orbital. We propose here a slightly modified DFT+U scheme, that takes into account the fact that the O-p is truncated in usual DFT+U implementation in PAW. This scheme yields more physical values of U than the ones traditionally used in the literature, and describes well the properties of the hole polaron.

All Electron ab initio Investigations of the Three Lowest Lying Electronic States of the RuC Molecule

DEFF Research Database (Denmark)

Shim, Irene; Gingerich, K. A.

2000-01-01

The three lowest-lying electronic states of RuC, (1)Sigma(+), (3)Delta, and (1)Delta, have been investigated by performing all-electron ab initio multi-configuration self-consistent-field (CASSCF) and multi-reference configuration interaction (MRCI) calculations including relativistic corrections....... The electronic ground state is derived as (1)Sigma(+) with the spectroscopic constants r(e) = 1.616 Angstrom and omega(e) = 1085 cm(-1). The lowest-lying excited state, (3)Delta, has r(e) = 1.632 Angstrom, omega(e) = 1063 cm(-1), and T-e = 912 cm(-1). These results are consistent with recent spectroscopic values....... The chemical bonds in all three lowest-lying states are triple bonds composed of one sigma and two pi bonds. (C) 2000 Elsevier Science B.V. All rights reserved....

Technology for On-Chip Qubit Control with Microfabricated Surface Ion Traps

Energy Technology Data Exchange (ETDEWEB)

Highstrete, Clark [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Quantum Information Sciences Dept.; Scott, Sean Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). RF/Optoelectronics Dept.; Nordquist, Christopher D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). RF/Optoelectronics Dept.; Sterk, Jonathan David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Photonic Microsystem Technologies Dept.; Maunz, Peter Lukas Wilhelm [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Photonic Microsystem Technologies Dept.; Tigges, Christopher P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Photonic Microsystem Technologies Dept.; Blain, Matthew Glenn [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Photonic Microsystem Technologies Dept.; Heller, Edwin J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Microsystems Integration Dept.; Stevens, James E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). MESAFab Operations 2 Dept.

2013-11-01

Trapped atomic ions are a leading physical system for quantum information processing. However, scalability and operational fidelity remain limiting technical issues often associated with optical qubit control. One promising approach is to develop on-chip microwave electronic control of ion qubits based on the atomic hyperfine interaction. This project developed expertise and capabilities at Sandia toward on-chip electronic qubit control in a scalable architecture. The project developed a foundation of laboratory capabilities, including trapping the ¹⁷¹Yb⁺ hyperfine ion qubit and developing an experimental microwave coherent control capability. Additionally, the project investigated the integration of microwave device elements with surface ion traps utilizing Sandia’s state-of-the-art MEMS microfabrication processing. This effort culminated in a device design for a multi-purpose ion trap experimental platform for investigating on-chip microwave qubit control, laying the groundwork for further funded R&D to develop on-chip microwave qubit control in an architecture that is suitable to engineering development.

Quantum dots use both LUMO and surface trap electrons in photoreduction process

Energy Technology Data Exchange (ETDEWEB)

Darżynkiewicz, Zbigniew M. [Centre of New Technologies, University of Warsaw, Banacha 2c, 02-097 Warsaw (Poland); Division of Biophysics, Faculty of Physics, University of Warsaw, Żwirki i Wigury 93, 02-089 Warsaw (Poland); Pędziwiatr, Marta [Institute of Physics PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Grzyb, Joanna, E-mail: jgrzyb@ifpan.edu.pl [Institute of Physics PAS, al. Lotników 32/46, 02-668 Warsaw (Poland)

2017-03-15

Here, we explore a mechanism of quantum dots related photoreduction of two redox-active proteins, cytochrome c and ferredoxin, by detailed analysis of fluorescence decay and reconstruction of time-resolved emission spectra (TRES). We used two types of cadmium telluride quantum dots, with diameters of 2.6 nm and 3.9 nm and maximum emissions at 550 nm and at 650 nm, respectively, which are known to be able to reduce proteins with different efficiencies. First, we observed that for a pure quantum dots solution, the fluorescence decay can be well fitted by three components. The average fluorescence lifetimes, as well as separate time constants, depend on the nanocrystal diameter. In the presence of proteins, fluorescence decay is faster and cytochrome c has a greater impact than ferredoxin. The TRES experiment showed that a fraction of the medium τ decay component is dominant in a pure quantum dot solution, with the maximum corresponding to the steady-state spectrum. The addition of ferredoxin does not change this pattern, while the presence of cytochrome c strongly promotes the shortest τ. Additionally, potassium iodide titration experiments were used to verify the origin of individual decay components. We propose that reduction occurs by electron transfer from both conductive band and surface trap states.

Towards a Measurement of the n=2 Lamb Shift in Hydrogen-like Nitrogen Using an Electron Beam Ion Trap

International Nuclear Information System (INIS)

Hosaka, K.; Crosby, D. N.; Gaarde-Widdowson, K.; Smith, C. J.; Silver, J. D.; Myers, E. G.; Kinugawa, T.; Ohtani, S.

2003-01-01

Using a 14 C 16 O 2 laser the 2s 1/2 -2p 3/2 (fine structure - Lamb shift) transition has been induced in 14 N 6+ ions trapped in an electron beam ion trap. Prospects for a measurement of the Lamb shift in hydrogen-like nitrogen are discussed.

Influence of the shear flow on electron cyclotron resonance plasma confinement in an axisymmetric magnetic mirror trap of the electron cyclotron resonance ion source.

Science.gov (United States)

Izotov, I V; Razin, S V; Sidorov, A V; Skalyga, V A; Zorin, V G; Bagryansky, P A; Beklemishev, A D; Prikhodko, V V

2012-02-01

Influence of shear flows of the dense plasma created under conditions of the electron cyclotron resonance (ECR) gas breakdown on the plasma confinement in the axisymmetric mirror trap ("vortex" confinement) was studied experimentally and theoretically. A limiter with bias potential was set inside the mirror trap for plasma rotation. The limiter construction and the optimal value of the potential were chosen according to the results of the preliminary theoretical analysis. This method of "vortex" confinement realization in an axisymmetric mirror trap for non-equilibrium heavy-ion plasmas seems to be promising for creation of ECR multicharged ion sources with high magnetic fields, more than 1 T.

Influence of the shear flow on electron cyclotron resonance plasma confinement in an axisymmetric magnetic mirror trap of the electron cyclotron resonance ion source

International Nuclear Information System (INIS)

Izotov, I. V.; Razin, S. V.; Sidorov, A. V.; Skalyga, V. A.; Zorin, V. G.; Bagryansky, P. A.; Beklemishev, A. D.; Prikhodko, V. V.

2012-01-01

Influence of shear flows of the dense plasma created under conditions of the electron cyclotron resonance (ECR) gas breakdown on the plasma confinement in the axisymmetric mirror trap (''vortex'' confinement) was studied experimentally and theoretically. A limiter with bias potential was set inside the mirror trap for plasma rotation. The limiter construction and the optimal value of the potential were chosen according to the results of the preliminary theoretical analysis. This method of ''vortex'' confinement realization in an axisymmetric mirror trap for non-equilibrium heavy-ion plasmas seems to be promising for creation of ECR multicharged ion sources with high magnetic fields, more than 1 T.

Electronic correlation studies. III. Self-correlated field method. Application to 2S ground state and 2P excited state of three-electron atomic systems

International Nuclear Information System (INIS)

Lissillour, R.; Guerillot, C.R.

1975-01-01

The self-correlated field method is based on the insertion in the group product wave function of pair functions built upon a set of correlated ''local'' functions and of ''nonlocal'' functions. This work is an application to three-electron systems. The effects of the outer electron on the inner pair are studied. The total electronic energy and some intermediary results such as pair energies, Coulomb and exchange ''correlated'' integrals, are given. The results are always better than those given by conventional SCF computations and reach the same level of accuracy as those given by more laborious methods used in correlation studies. (auth)

Detection and characterisation of radicals using electron paramagnetic resonance (EPR) spin trapping and related methods

DEFF Research Database (Denmark)

Davies, Michael Jonathan

2016-01-01

Electron paramagnetic resonance (EPR) spectroscopy (also known as electron spin resonance, ESR, or electron magnetic resonance, EMR, spectroscopy) is often described as the “gold standard” for the detection and characterisation of radicals in chemical, biological and medical systems. The article...... reviews aspects of EPR spectroscopy and discusses how this methodology and related techniques can be used to obtain useful information from biological systems. Consideration is given to the direct detection of radicals, the use of spin traps and the detection of nitric oxide, and the advantages...

Numerical realization of the variational method for generating self-trapped beams.

Science.gov (United States)

Duque, Erick I; Lopez-Aguayo, Servando; Malomed, Boris A

2018-03-19

We introduce a numerical variational method based on the Rayleigh-Ritz optimization principle for predicting two-dimensional self-trapped beams in nonlinear media. This technique overcomes the limitation of the traditional variational approximation in performing analytical Lagrangian integration and differentiation. Approximate soliton solutions of a generalized nonlinear Schrödinger equation are obtained, demonstrating robustness of the beams of various types (fundamental, vortices, multipoles, azimuthons) in the course of their propagation. The algorithm offers possibilities to produce more sophisticated soliton profiles in general nonlinear models.

Numerical realization of the variational method for generating self-trapped beams

Science.gov (United States)

Duque, Erick I.; Lopez-Aguayo, Servando; Malomed, Boris A.

2018-03-01

We introduce a numerical variational method based on the Rayleigh-Ritz optimization principle for predicting two-dimensional self-trapped beams in nonlinear media. This technique overcomes the limitation of the traditional variational approximation in performing analytical Lagrangian integration and differentiation. Approximate soliton solutions of a generalized nonlinear Schr\\"odinger equation are obtained, demonstrating robustness of the beams of various types (fundamental, vortices, multipoles, azimuthons) in the course of their propagation. The algorithm offers possibilities to produce more sophisticated soliton profiles in general nonlinear models.

Influence of scattering processes on electron quantum states in nanowires

Directory of Open Access Journals (Sweden)

Pozdnyakov Dmitry

2007-01-01

Full Text Available AbstractIn the framework of quantum perturbation theory the self-consistent method of calculation of electron scattering rates in nanowires with the one-dimensional electron gas in the quantum limit is worked out. The developed method allows both the collisional broadening and the quantum correlations between scattering events to be taken into account. It is an alternativeper seto the Fock approximation for the self-energy approach based on Green’s function formalism. However this approach is free of mathematical difficulties typical to the Fock approximation. Moreover, the developed method is simpler than the Fock approximation from the computational point of view. Using the approximation of stable one-particle quantum states it is proved that the electron scattering processes determine the dependence of electron energy versus its wave vector.

Electron collisions in the trapped gyro-Landau fluid transport model

International Nuclear Information System (INIS)

Staebler, G. M.; Kinsey, J. E.

2010-01-01

Accurately modeling electron collisions in the trapped gyro-Landau fluid (TGLF) equations has been a major challenge. Insights gained from numerically solving the gyrokinetic equation have lead to a significant improvement of the low order TGLF model. The theoretical motivation and verification of this model with the velocity-space gyrokinetic code GYRO[J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] will be presented. The improvement in the fidelity of TGLF to GYRO is shown to also lead to better prediction of experimental temperature profiles by TGLF for a dedicated collision frequency scan.

Electron scattering off short-lived radioactive nuclei

International Nuclear Information System (INIS)

Wang, S.; Emoto, T.; Furukawa, Y.

2009-01-01

We have established a novel method which make electron scattering off short-lived radioactive nuclei come into being. This novel method was named SCRIT (Self-Confining RI ion Target). It was based on the well known "ion trapping" phenomenon in electron storage rings. Stable nucleus, 133 Cs, was used as target nucleus in the R&D experiment. The luminosity of interaction between stored electrons and Cs ions was about 1.02(0.06) × 10 26 cm -2 s -1 at beam current around 80 mA. The angular distribution of elastically scattered electrons from trapped Cs ions was measured. And an online luminosity monitor was used to monitor the change of luminosity during the experiment. (author)

Optical Trapping of Ion Coulomb Crystals

Directory of Open Access Journals (Sweden)

Julian Schmidt

2018-05-01

Full Text Available The electronic and motional degrees of freedom of trapped ions can be controlled and coherently coupled on the level of individual quanta. Assembling complex quantum systems ion by ion while keeping this unique level of control remains a challenging task. For many applications, linear chains of ions in conventional traps are ideally suited to address this problem. However, driven motion due to the magnetic or radio-frequency electric trapping fields sometimes limits the performance in one dimension and severely affects the extension to higher-dimensional systems. Here, we report on the trapping of multiple barium ions in a single-beam optical dipole trap without radio-frequency or additional magnetic fields. We study the persistence of order in ensembles of up to six ions within the optical trap, measure their temperature, and conclude that the ions form a linear chain, commonly called a one-dimensional Coulomb crystal. As a proof-of-concept demonstration, we access the collective motion and perform spectrometry of the normal modes in the optical trap. Our system provides a platform that is free of driven motion and combines advantages of optical trapping, such as state-dependent confinement and nanoscale potentials, with the desirable properties of crystals of trapped ions, such as long-range interactions featuring collective motion. Starting with small numbers of ions, it has been proposed that these properties would allow the experimental study of many-body physics and the onset of structural quantum phase transitions between one- and two-dimensional crystals.

Digital quantum simulation, Schrödinger cat state spectroscopy and setting up a linear ion trap

International Nuclear Information System (INIS)

Hempel, C.

2014-01-01

This PhD thesis reports on two experiments in the field of quantum information processing using trapped calcium ions. In addition, the text covers the setup and characterization of a new linear Paul trap accompanied by a novel implementation of single-ion addressing using an acousto-optic deflector. The first of the two experiments is concerned with the proof-of-principle implementation of digital quantum simulations using up to 6 ions and 100 gate operations. It investigates the scaling behavior of simulations of elementary models of magnetism in terms of the number of involved spins and the complexity of their mutual interactions. The second experiment introduces the application of a Schroedinger cat state in the indirect detection of photon scattering events on a broad electronic transition. The method is shown to have a sensitivity down to the single photon level in a proof-of-principle demonstration using a mixed-isotope crystal of 40Ca+ and 44Ca+. A brief outlook towards future experiments and extensions of the experimental setup concludes the manuscript.(author) [de

Experiments with highly charged ions up to bare U92+ on the electron beam ion trap

International Nuclear Information System (INIS)

Beiersdorfer, P.

1994-07-01

An overview is given of the current experimental effort to investigate the level structure of highly charged ions with the Livermore electron beam ion trap (EBIT) facility. The facility allows the production and study of virtually any ionization state of any element up to bare U 92+ . Precision spectroscopic measurements have been performed for a range of Δn = 0 and Δn = 1 transitions. Examples involving 3-4 and 2-3 as well as 3-3 and 2-2 transitions in uranium ions are discussed that illustrated some of the measurement and analysis techniques employed. The measurements have allowed tests of calculations of the the quantum electrodynamical contributions to the transitions energies at the 0.4% level in a regime where (Zα) ∼ 1

Self-trapped excitonic green emission from layered semiconductors

International Nuclear Information System (INIS)

Miah, M. Idrish

2009-01-01

Crystals of layered semiconductor are grown by Bridgman technique and are studied them under two-photon excitation by a Q-switched 20-ns pulse laser. The photoluminescence (PL) emission spectra of the crystals are measured at various pumping powers and temperatures. The PL spectra appear broad and structureless emissions with their peaks in the green spectral region. The characteristic emissions are from self-trapped excitons of the crystals. An analysis of the spectra measured at various pumping powers shows a quadratic dependence of the PL peak intensity on the power, confirming a biphotonic process of the two-photon pumping. The temperature dependence shows an enhancement of the nonlinear response at low temperatures. The activation energy is estimated and found to be 2.4 meV. The roles of the bound excitons in the observed PL are discussed briefly.

Self-trapped excitonic green emission from layered semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

2009-08-15

Crystals of layered semiconductor are grown by Bridgman technique and are studied them under two-photon excitation by a Q-switched 20-ns pulse laser. The photoluminescence (PL) emission spectra of the crystals are measured at various pumping powers and temperatures. The PL spectra appear broad and structureless emissions with their peaks in the green spectral region. The characteristic emissions are from self-trapped excitons of the crystals. An analysis of the spectra measured at various pumping powers shows a quadratic dependence of the PL peak intensity on the power, confirming a biphotonic process of the two-photon pumping. The temperature dependence shows an enhancement of the nonlinear response at low temperatures. The activation energy is estimated and found to be 2.4 meV. The roles of the bound excitons in the observed PL are discussed briefly.

Self-trapped holes in β-Ga2O3 crystals

Science.gov (United States)

Kananen, B. E.; Giles, N. C.; Halliburton, L. E.; Foundos, G. K.; Chang, K. B.; Stevens, K. T.

2017-12-01

We have experimentally observed self-trapped holes (STHs) in a β-Ga2O3 crystal using electron paramagnetic resonance (EPR). These STHs are an intrinsic defect in this wide-band-gap semiconductor and may serve as a significant deterrent to producing usable p-type material. In our study, an as-grown undoped n-type β-Ga2O3 crystal was initially irradiated near room temperature with high-energy neutrons. This produced gallium vacancies (acceptors) and lowered the Fermi level. The STHs (i.e., small polarons) were then formed during a subsequent irradiation at 77 K with x rays. Warming the crystal above 90 K destroyed the STHs. This low thermal stability is a strong indicator that the STH is the correct assignment for these new defects. The S = 1/2 EPR spectrum from the STHs is easily observed near 30 K. A holelike angular dependence of the g matrix (the principal values are 2.0026, 2.0072, and 2.0461) suggests that the defect's unpaired spin is localized on one oxygen ion in a nonbonding p orbital aligned near the a direction in the crystal. The EPR spectrum also has resolved hyperfine structure due to equal and nearly isotropic interactions with 69,71Ga nuclei at two neighboring Ga sites. With the magnetic field along the a direction, the hyperfine parameters are 0.92 mT for the 69Ga nuclei and 1.16 mT for the 71Ga nuclei.

Observation of trapped-electron-mode microturbulence in reversed field pinch plasmas

Science.gov (United States)

Duff, J. R.; Williams, Z. R.; Brower, D. L.; Chapman, B. E.; Ding, W. X.; Pueschel, M. J.; Sarff, J. S.; Terry, P. W.

2018-01-01

Density fluctuations in the large-density-gradient region of improved confinement Madison Symmetric Torus reversed field pinch (RFP) plasmas exhibit multiple features that are characteristic of the trapped-electron mode (TEM). Core transport in conventional RFP plasmas is governed by magnetic stochasticity stemming from multiple long-wavelength tearing modes. Using inductive current profile control, these tearing modes are reduced, and global confinement is increased to that expected for comparable tokamak plasmas. Under these conditions, new short-wavelength fluctuations distinct from global tearing modes appear in the spectrum at a frequency of f ˜ 50 kHz, which have normalized perpendicular wavenumbers k⊥ρs≲ 0.2 and propagate in the electron diamagnetic drift direction. They exhibit a critical-gradient threshold, and the fluctuation amplitude increases with the local electron density gradient. These characteristics are consistent with predictions from gyrokinetic analysis using the Gene code, including increased TEM turbulence and transport from the interaction of remnant tearing magnetic fluctuations and zonal flow.

An application of random field theory to analysis of electron trapping sites in disordered media

International Nuclear Information System (INIS)

Hilczer, M.; Bartczak, W.M.

1993-01-01

The potential energy surface in a disordered medium is considered a random field and described using the concepts of the mathematical theory of random fields. The preexisting traps for excess electrons are identified with certain regions of excursion (extreme regions) of the potential field. The theory provides an analytical method of statistical analysis of these regions. Parameters of the cavity-averaged potential field, which are provided by computer simulation of a given medium, serve as input data for the analysis. The statistics of preexisting traps are obtained for liquid methanol as a numerical example of the random field method. 26 refs., 6 figs

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

International Nuclear Information System (INIS)

Ji Xiao-Li; Liao Yi-Ming; Yan Feng; Shi Yi; Zhang Guan; Guo Qiang

2011-01-01

Negative bias temperature instability (NBTI) in ultrathin-plasma-nitrided-oxide (PNO) based p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) is investigated at temperatures ranging from 220K to 470K. It is found that the threshold voltage V T degradation below 290 K is dominated by the hole trapping process. Further studies unambiguously show that this process is unnecessarily related to nitrogen but the incorporation of nitrogen in the gate dielectric increases the probability of hole trapping in the NBTI process as it introduces extra trap states located in the upper half of the Si band gap. The possible hole trapping mechanism in NBTI stressed PNO pMOSFETs is suggested by taking account of oxygen and nitrogen related trap centers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Towards a Measurement of the n=2 Lamb Shift in Hydrogen-like Nitrogen Using an Electron Beam Ion Trap

Energy Technology Data Exchange (ETDEWEB)

Hosaka, K.; Crosby, D. N.; Gaarde-Widdowson, K.; Smith, C. J.; Silver, J. D. [University of Oxford, Department of Physics (United Kingdom); Myers, E. G. [Florida State University (United States); Kinugawa, T.; Ohtani, S. [University of Electro-Communications, Cold Trapped Ions Project, JST (Japan)

2003-03-15

Using a {sup 14}C{sup 16}O{sub 2} laser the 2s{sub 1/2}-2p{sub 3/2} (fine structure - Lamb shift) transition has been induced in {sup 14}N{sup 6+} ions trapped in an electron beam ion trap. Prospects for a measurement of the Lamb shift in hydrogen-like nitrogen are discussed.

A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization

International Nuclear Information System (INIS)

Jeong, Chan-Yong; Lee, Daeun; Song, Sang-Hun; Kwon, Hyuck-In; Kim, Jong In; Lee, Jong-Ho

2014-01-01

We discuss the device degradation mechanism of amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) under simultaneous gate and drain bias stresses based on the electronic trap characterization results. The transfer curve exhibits an apparent negative shift as the stress time increases, and a formation of hump is observed in the transfer curve after stresses. A notable increase of the frequency dispersion is observed after stresses in both gate-to-drain capacitance–voltage (C GD –V G ) and gate-to-source capacitance–voltage (C GS –V G ) curves, which implies that the subgap states are generated by simultaneous gate and drain bias stresses, and the damaged location is not limited to the drain side of TFTs. The larger frequency dispersion is observed in C GD –V G  curves after stresses in a wider channel device, which implies that the heat is an important factor in the generation of the subgap states under simultaneous gate and drain bias stresses in a-IGZO TFTs. Based on the electronic trap characterization results, we conclude that the impact ionization near the drain side of the device is not a dominant mechanism causing the generation of subgap states and device degradation in a-IGZO TFTs under simultaneous gate and drain bias stresses. The generation of oxygen vacancy-related donor-like traps near the conduction band edge is considered as a possible mechanism causing the device degradation under simultaneous gate and drain bias stresses in a-IGZO TFTs. (paper)

Deuterium trapping in carbon fiber composites under high fluence

International Nuclear Information System (INIS)

Airapetov, A.A.; Begrambekov, L.B.; Kuzmin, A.A.; Shigin, P.A.; Zakharov, A.M.

2010-01-01

The paper is devoted to investigation of deuterium trapping in CFC, dance graphite MPG-8 and pyrolytic graphite (PG) under plasma ion- and electron irradiation. Number of specific features of deuterium trapping and retention under plasma ion and electron irradiation is presented and discussed. In particular it is shown that 1) deuterium trapping takes place even when energy of impinging ions approaches zero; 2) deuterium is trapped under irradiation by plasma electrons; 3) under irradiation at equal fluences deuterium trapping is higher, when ion flux is smaller. High energy ion penetrating the surfaces are trapped in the traps created at the expense of their kinetic energy. The process may be named 'kinetic trapping'. Under low energy (smaller than 200 eV) electron and/or ion irradiation the energy of inelastic interaction on the surface provides creation of active centers, which initiate dissociation of deuterium sorbed on the surface, penetration of deuterium atoms into graphite and their trapping in specific low energy traps. The term 'potential trapping' is proposed for this type of trapping. Under high energy irradiation such atoms can fill the traps formed through kinetic mechanism. Origination of moveable deuterium atoms from the layer of surface sorption seems to be time dependent process and it is a reason of increase of trapping along with irradiation time. New features of deuterium trapping and retention in graphite evaluated in this study offer new opportunities for analysis and correct estimation of hydrogen isotope trapping and retention in tokamaks having graphite tiles. (authors)

Charge-trapping effect of doped fluorescent dye on the electroluminescent processes and its performance in polymer light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Ye Tengling; Chen Zhenyu; Chen Jiangshan [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China); Ma Dongge, E-mail: mdg1014@ciac.jl.cn [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China)

2010-11-15

We have measured the temperature dependence of the steady-state current-voltage (I-V) characteristics and the transient electroluminescent (EL) characteristics in 4-(dicyanomethylene)-2-t-propyl-6-(1,1,7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped polyfluorene devices to study the charge-trapping effect of DCJTB fluorescent dye on luminescence processes and on device performance. Physical and chemical analyses prove that DCJTB molecules serve both as electron and hole traps, and the charge-trapping effect is more sensitive against the electrons than the holes at the low dopant concentration. This intrinsic characteristic causes the electron to be injected into the emitting layer first and then trapped in the bulk, producing a strong effect on device performance.

Ground-state electronic structure of actinide monocarbides and mononitrides

DEFF Research Database (Denmark)

Petit, Leon; Svane, Axel; Szotek, Z.

2009-01-01

The self-interaction corrected local spin-density approximation is used to investigate the ground-state valency configuration of the actinide ions in the actinide monocarbides, AC (A=U,Np,Pu,Am,Cm), and the actinide mononitrides, AN. The electronic structure is characterized by a gradually increa...

Electron confinement in quantum nanostructures: Self-consistent Poisson-Schroedinger theory

International Nuclear Information System (INIS)

Luscombe, J.H.; Bouchard, A.M.; Luban, M.

1992-01-01

We compute the self-consistent electron states and confining potential, V(r,T), for laterally confined cylindrical quantum wires at a temperature T from a numerical solution of the coupled Poisson and Schroedinger (PS) equations. Finite-temperature effects are included in the electron density function, n(r,T), via the single-particle density matrix in the grand-canonical ensemble using the self-consistent bound states. We compare our results for a GaAs quantum wire with those obtained previously [J. H. Luscombe and M. Luban, Appl. Phys. Lett. 57, 61 (1990)] from a finite-temperature Thomas-Fermi (TF) approximation. We find that the TF results agree well with those of the more realistic, but also more computationally intensive PS theory, except for low temperatures or for cases where the quantum wire is almost, but not totally, depleted due to a combination of either small geometry, surface boundary conditions, or low doping concentrations. In the latter situations, the number of subbands that are populated is relatively small, and both n(r,T) and V(r,T) exhibit Friedel-type oscillations. Otherwise the TF theory, which is based on free-particle states, is remarkably accurate. We also present results for the partial electron density functions associated with the angular momentum quantum numbers, and discuss their role in populating the quantum wire

Simulating quantum effects of cosmological expansion using a static ion trap

Science.gov (United States)

Menicucci, Nicolas C.; Olson, S. Jay; Milburn, Gerard J.

2010-09-01

We propose a new experimental test bed that uses ions in the collective ground state of a static trap to study the analogue of quantum-field effects in cosmological spacetimes, including the Gibbons-Hawking effect for a single detector in de Sitter spacetime, as well as the possibility of modeling inflationary structure formation and the entanglement signature of de Sitter spacetime. To date, proposals for using trapped ions in analogue gravity experiments have simulated the effect of gravity on the field modes by directly manipulating the ions' motion. In contrast, by associating laboratory time with conformal time in the simulated universe, we can encode the full effect of curvature in the modulation of the laser used to couple the ions' vibrational motion and electronic states. This model simplifies the experimental requirements for modeling the analogue of an expanding universe using trapped ions, and it enlarges the validity of the ion-trap analogy to a wide range of interesting cases.

Distinguishing between deep trapping transients of electrons and holes in TiO2 nanotube arrays using planar microwave resonator sensor.

Science.gov (United States)

Zarifi, Mohammad H; Wiltshire, Benjamin Daniel; Mahdi, Najia; Shankar, Karthik; Daneshmand, Mojgan

2018-05-16

A large signal DC bias and a small signal microwave bias were simultaneously applied to TiO2 nanotube membranes mounted on a planar microwave resonator. The DC bias modulated the electron concentration in the TiO2 nanotubes, and was varied between 0 and 120 V in this study. Transients immediately following the application and removal of DC bias were measured by monitoring the S-parameters of the resonator as a function of time. The DC bias stimulated Poole-Frenkel type trap-mediated electrical injection of excess carriers into TiO2 nanotubes which resulted in a near constant resonant frequency but a pronounced decrease in the microwave amplitude due to free electron absorption. When ultraviolet illumination and DC bias were both present and then step-wise removed, the resonant frequency shifted due to trapping -mediated change in the dielectric constant of the nanotube membranes. Characteristic lifetimes of 60-80 s, 300-800 s and ~3000 s were present regardless of whether light or bias was applied and are also observed in the presence of a hole scavenger, which we attribute to oxygen adsorption and deep electron traps while another characteristic lifetime > 9000 s was only present when illumination was applied, and is attributed to the presence of hole traps.

Proposed demonstration of the Einstein-Poldosky-Rosen paradox using trapped electrons

International Nuclear Information System (INIS)

Martins, Ana M.

2002-01-01

Correlations of the type discussed by Einstein, Poldosky, and Rosen in their original 1935 paradox may be generated between the positions and the momenta of two electrons confined in two spatially separated Penning traps when they are allowed to be coupled for a certain time interval. An experimental demonstration of the paradox could be done using the accurate techniques of manipulation and measurement of confined charged particles. The basic ideas presented in this paper might be extended in order to enable quantum information transfer of continuous variables between massive particles

Variations of electron fluxes in the outer radiation belt near the boundary of a trapping region during substorms

International Nuclear Information System (INIS)

Ginzburg, E.A.; Malyshev, A.B.

1979-01-01

Variations of electron fluxes with the energy Esub(e) > 0.7 MeV have been investigated near the high-latitude boundary of electron trapping region in the night and day sections of the magnetosphere. It is found that during substorms the natural changes of the structure of electron fluxes take place. On the night side of the magnetosphere after the flux boundary drift to the equator at the preliminary phase, its sharp drift to the pole at the explosion phase takes place with further slow ( during 1-2 hours) shift to the initial position. The boundary position reconstruction period coincide by duration with the life time of negative bays at magnetograms of the night section stations. On the day side the boundary of electron fluxes recorded drifts to the pole in 30-60 min after the beginning of the substorm exposion phase. The results obtained are interpreted within the framework of the theory of adiabatic drift of trapped electrons and their pitch-angular diffusion under the effect of very low frequency waves

Trapping molecules in two and three dimensions

International Nuclear Information System (INIS)

Pinkse, PW.H.; Junglen, T.; Rieger, T.; Rangwala, S.A.; Windpassinger, P.; Rempe, G.

2005-01-01

Full text: Cold molecules offer a new testing ground for quantum-physical effects in nature. For example, producing slow beams of large molecules could push experiments studying the boundary between quantum interference and classical particles up towards ever heavier particles. Moreover, cold molecules, in particular YbF, seem an attractive way to narrow down the constraints on the value of the electron dipole moment and finally, quantum information processing using chains of cold polar molecules or vibrational states in molecules have been proposed. All these proposals rely on advanced production and trapping techniques, most of which are still under development. Therefore, novel production and trapping techniques for cold molecules could offer new possibilities not found in previous methods. Electric traps hold promise for deep trap potentials for neutral molecules. Recently we have demonstrated two-dimensional trapping of polar molecules in a four-wire guide using electrostatic and electrodynamic trapping techniques. Filled from a thermal effusive source, such a guide will deliver a beam of slow molecules, which is an ideal source for interferometry experiments with large molecules, for instance. Here we report about the extension of this work to three-dimensional trapping. Polar molecules with a positive Stark shift can be trapped in the minimum of an electrostatic field. We have successfully tested a large volume electrostatic trap for ND3 molecules. A special feature of this trap is that it can be loaded continuously from an electrostatic guide, at a temperature of a few hundred mK. (author)

Mats and LaSpec: High-precision experiments using ion traps and lasers at Fair

Energy Technology Data Exchange (ETDEWEB)

Rodriguez, D.; Lallena, A.M.; Blaum, K.; Bohm, C.; Cakirli, R.B.; Crespo Lopez-Urrutia, J.R.; Eliseev, S.; Ketelaer, J.; Kreim, M.S.; Kowalska, M.; Litvinov, Y.A.; Nagy, S.; Neidherr, D.; Repp, J.; Roux, C.; Schabinger, B.; Ullrich, J.; Nortershauser, W.; Eberhardt, K.; Geppert, C.; Kramer, J.; Krieger, A.; Sanchez, R.; Ahammed, M.; Das, P.; Ray, A.; Algora, A.; Rubio, B.; Tain, J.L.; Audi, G.; Lunney, D.; Naimi, S.; Aysto, J.; Jokinen, A.; Kolhinen, V.; Moore, I.; Beck, D.; Block, M.; Geissel, H.; Heinz, S.; Herfurth, F.; Litvinov, Y.A.; Minaya-Ramirez, E.; Plab, W.R.; Quint, W.; Scheidenberger, C.; Winkler, M.; Bender, M.; Billowes, J.; Campbell, P.; Flanagan, K.T.; Schwarz, S.; Bollen, G.; Ferrer, R.; George, S.; Kester, O.; Brodeur, M.; Brunner, T.; Delheij, P.; Dilling, J.; Ettenauer, S.; Lapierre, A.; Bushaw, B.A.; Cano-Ott, D.; Martinez, T.; Cortes, G.; Gomez-Hornillos, M.B.; Dax, A.; Herlert, A.; Yordanov, D.; De, A.; Dickel, T.; Geissel, H.; Jesch, C.; Kuhl, T.; Petrick, M.; PlaB, W.R.; Scheidenberger, C.; Garcia-Ramos, J.E.; Gartzke, E.; Habs, D.; Szerypo, J.; Thirolf, P.G.; Weber, C.; Gusev, Y.; Nesterenko, D.; Novikov, Y.N.; Popov, A.; Seliverstov, M.; Vasiliev, A.; Vorobjev, G.; Heenen, P.H.; Marx, G.; Schweikhard, L.; Ziegler, F.; Hobein, M.; Schuch, R.; Solders, A.; Suhonen, M.; Huber, G.; Wendt, K.; Huyse, M.; Koudriavtsev, I.; Neyens, G.; Van Duppen, P.; Le Blanc, F.; Matos, M.; Reinhard, P.G.; Schneider, D.

2010-05-15

Nuclear ground state properties including mass, charge radii, spins and moments can be determined by applying atomic physics techniques such as Penning-trap based mass spectrometry and laser spectroscopy. The MATS and LaSpec setups at the low-energy beamline at FAIR will allow us to extend the knowledge of these properties further into the region far from stability. With MATS (Precision Measurements of very short-lived nuclei using an Advanced Trapping System for highly-charged ions) at FAIR we aim to apply several techniques to very short-lived radionuclides: High-accuracy mass measurements, in-trap conversion electron and alpha spectroscopy, and trap-assisted spectroscopy. The experimental setup of MATS is a unique combination of an electron beam ion trap for charge breeding, ion traps for beam preparation, and a high-precision Penning trap system for mass measurements and decay studies. For the mass measurements, MATS offers both a high accuracy and a high sensitivity. A relative mass uncertainty of 10{sup -9} can be reached by employing highly-charged ions and a non-destructive Fourier-Transform Ion-Cyclotron-Resonance (FT-ICR) detection technique on single stored ions. Decay studies in ion traps will become possible with MATS. Laser spectroscopy of radioactive isotopes and isomers is an efficient and model-independent approach for the determination of nuclear ground and isomeric state properties. Hyperfine structures and isotope shifts in electronic transitions exhibit readily accessible information on the nuclear spin, magnetic dipole and electric quadrupole moments as well as root-mean-square charge radii. The accuracy of laser-spectroscopic-determined nuclear properties is very high while requirements concerning production rates are moderate. This Technical Design Report describes a new Penning trap mass spectrometry setup as well as a number of complementary experimental devices for laser spectroscopy. Since MATS and LaSpec require high-quality low

Mats and LaSpec: High-precision experiments using ion traps and lasers at Fair

International Nuclear Information System (INIS)

Rodriguez, D.; Lallena, A.M.; Blaum, K.; Bohm, C.; Cakirli, R.B.; Crespo Lopez-Urrutia, J.R.; Eliseev, S.; Ketelaer, J.; Kreim, M.S.; Kowalska, M.; Litvinov, Y.A.; Nagy, S.; Neidherr, D.; Repp, J.; Roux, C.; Schabinger, B.; Ullrich, J.; Nortershauser, W.; Eberhardt, K.; Geppert, C.; Kramer, J.; Krieger, A.; Sanchez, R.; Ahammed, M.; Das, P.; Ray, A.; Algora, A.; Rubio, B.; Tain, J.L.; Audi, G.; Lunney, D.; Naimi, S.; Aysto, J.; Jokinen, A.; Kolhinen, V.; Moore, I.; Beck, D.; Block, M.; Geissel, H.; Heinz, S.; Herfurth, F.; Litvinov, Y.A.; Minaya-Ramirez, E.; Plab, W.R.; Quint, W.; Scheidenberger, C.; Winkler, M.; Bender, M.; Billowes, J.; Campbell, P.; Flanagan, K.T.; Schwarz, S.; Bollen, G.; Ferrer, R.; George, S.; Kester, O.; Brodeur, M.; Brunner, T.; Delheij, P.; Dilling, J.; Ettenauer, S.; Lapierre, A.; Bushaw, B.A.; Cano-Ott, D.; Martinez, T.; Cortes, G.; Gomez-Hornillos, M.B.; Dax, A.; Herlert, A.; Yordanov, D.; De, A.; Dickel, T.; Geissel, H.; Jesch, C.; Kuhl, T.; Petrick, M.; PlaB, W.R.; Scheidenberger, C.; Garcia-Ramos, J.E.; Gartzke, E.; Habs, D.; Szerypo, J.; Thirolf, P.G.; Weber, C.; Gusev, Y.; Nesterenko, D.; Novikov, Y.N.; Popov, A.; Seliverstov, M.; Vasiliev, A.; Vorobjev, G.; Heenen, P.H.; Marx, G.; Schweikhard, L.; Ziegler, F.; Hobein, M.; Schuch, R.; Solders, A.; Suhonen, M.; Huber, G.; Wendt, K.; Huyse, M.; Koudriavtsev, I.; Neyens, G.; Van Duppen, P.; Le Blanc, F.; Matos, M.; Reinhard, P.G.; Schneider, D.

2010-01-01

Nuclear ground state properties including mass, charge radii, spins and moments can be determined by applying atomic physics techniques such as Penning-trap based mass spectrometry and laser spectroscopy. The MATS and LaSpec setups at the low-energy beamline at FAIR will allow us to extend the knowledge of these properties further into the region far from stability. With MATS (Precision Measurements of very short-lived nuclei using an Advanced Trapping System for highly-charged ions) at FAIR we aim to apply several techniques to very short-lived radionuclides: High-accuracy mass measurements, in-trap conversion electron and alpha spectroscopy, and trap-assisted spectroscopy. The experimental setup of MATS is a unique combination of an electron beam ion trap for charge breeding, ion traps for beam preparation, and a high-precision Penning trap system for mass measurements and decay studies. For the mass measurements, MATS offers both a high accuracy and a high sensitivity. A relative mass uncertainty of 10 -9 can be reached by employing highly-charged ions and a non-destructive Fourier-Transform Ion-Cyclotron-Resonance (FT-ICR) detection technique on single stored ions. Decay studies in ion traps will become possible with MATS. Laser spectroscopy of radioactive isotopes and isomers is an efficient and model-independent approach for the determination of nuclear ground and isomeric state properties. Hyperfine structures and isotope shifts in electronic transitions exhibit readily accessible information on the nuclear spin, magnetic dipole and electric quadrupole moments as well as root-mean-square charge radii. The accuracy of laser-spectroscopic-determined nuclear properties is very high while requirements concerning production rates are moderate. This Technical Design Report describes a new Penning trap mass spectrometry setup as well as a number of complementary experimental devices for laser spectroscopy. Since MATS and LaSpec require high-quality low-energy beams

Optical electronics self-organized integration and applications

CERN Document Server

Yoshimura, Tetsuzo

2012-01-01

IntroductionFrom Electronics to Optical ElectronicsAnalysis Tools for Optical CircuitsSelf-Organized Optical Waveguides: Theoretical AnalysisSelf-Organized Optical Waveguides: Experimental DemonstrationsOptical Waveguide Films with Vertical Mirrors 3-D Optical Circuits with Stacked Waveguide Films Heterogeneous Thin-Film Device IntegrationOptical Switches OE Hardware Built by Optical ElectronicsIntegrated Solar Energy Conversion SystemsFuture Challenges.

Screening conditions in a magnetized plasma with electron beam, with application to ripple trapped electron losses

Energy Technology Data Exchange (ETDEWEB)

Faudot, E.; Heuraux, S. [Nancy-1 Univ. Henri Poincare, LPMIA, UMR CNRS 7040, 54 (France); Colas, L.; Saint-Laurent, F.; Martin, G.; Basiuk, V. [Association Euratom-CEA Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee

2004-07-01

In Tore Supra, electrons are accelerated by lower hybrid waves in the direction parallel to the confinement magnetic field, in order to drive non-inductive current. But electrons have also on increase of their perpendicular velocity, then 10% of the most energetic electrons get trapped in the magnetic ripple between 2 adjacent toroidal coils, thus forming a beam. The electron beam follows a banana trajectory, the 20 mm wide protection represented by a cooled copper tube is assumed to protect the VP entrance from this energetic flux. Nevertheless, this beam is able to go beyond the copper tube and creates a hot spot on the steel panel edge able to melt the metal. Heat fluxes deposition on the vertical port (VP) can be understood with a beam+sheath theory including the fact that the sheaths can be obstructed when their length becomes greater than flux tube length. By this way, we identify 4 deposition regimes: 2 free sheath regimes and 2 obstructed sheath regimes. Beam flux deposits either at the entrance of the VP along first 2 cm behind the copper tube or until the end of the VP when beam flux is high and for free sheath. Obstructed sheaths make the repulsive, potential for electrons decrease and so accelerate the flux deposition. (authors)

New experimental initiatives using very highly charged ions from an 'electron beam ion trap'

International Nuclear Information System (INIS)

Schneider, D.

1996-01-01

A short review of the experimental program in highly-charged heavy ion physics conducted at the Lawrence Livermore National Laboratory Electron Beam Ion Trap (EBIT) facility is presented. The heavy-ion research, involving ions up to fully stripped U 92+ , includes precision x-ray spectroscopy and lifetime studies, electron impact ionization and excitation cross section measurements. The investigations of ion-surface interactions following the impact of high-Z highly charged ions on surfaces are aimed to study the neutralization dynamics effecting the ion and the response of the surface as well. (author)

Measurement of the radiative cooling rates for high-ionization species of krypton using an electron beam ion trap

International Nuclear Information System (INIS)

Radtke, R.; Biedermann, C.; Fuchs, T.; Fussmann, G.; Beiersdorfer, P.

2000-01-01

We describe a measurement of the radiative cooling rate for krypton made at the Berlin electron beam ion trap (EBIT). The EBIT was tuned to a charge-state distribution approaching the ionization balance of a plasma at a temperature of about 5 keV. To determine the cooling rate, we made use of EBIT's capabilities to sample a wide range of electron-beam energies and distinguish between different radiation channels. We have measured the x-ray emission from bremsstrahlung, radiative recombination, dielectronic recombination, and line radiation following electron-impact excitation. The dominant contribution to the cooling rate is made by the n=3-2, n=4-2,... x rays of the L-shell spectra of krypton, which produce more than 75% of the total radiation loss. A difference with theoretical calculations is noted for the measured total cooling rate. The predicted values are lower by a factor of 1.5-2, depending on the theoretical model. For our measurement of the cooling rate, we estimate an uncertainty interval of 22-30 %. (c) 2000 The American Physical Society

The Effects of Surface Reconstruction and Electron-Positron Correlation on the Annihilation Characteristics of Positrons Trapped at Semiconductor Surfaces

International Nuclear Information System (INIS)

Fazleev, N. G.; Jung, E.; Weiss, A. H.

2009-01-01

Experimental positron annihilation induced Auger electron spectroscopy (PAES) data from Ge(100) and Ge(111) surfaces display several strong Auger peaks corresponding to M 4,5 N 1 N 2,3 , M 2,3 M 4,5 M 4,5 , M 2,3 M 4,5 V, and M 1 M 4,5 M 4,5 Auger transitions. The integrated peak intensities of Auger transitions have been used to obtain experimental annihilation probabilities for the Ge 3d and 3p core electrons. The experimental data were analyzed by performing theoretical studies of the effects of surface reconstructions and electron-positron correlations on image potential induced surface states and annihilation characteristics of positrons trapped at the reconstructed Ge(100) and Ge(111) surfaces. Calculations of positron surface states and annihilation characteristics have been performed for Ge(100) surface with (2x1), (2x2), and (4x2) reconstructions, and for Ge(111) surface with c(2x8) reconstruction. Estimates of the positron binding energy and annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of the semiconductor and to the approximations used to describe electron-positron correlations. The results of these theoretical studies are compared with the ones obtained for the reconstructed Si(100)-(2x1) and Si(111)-(7x7) surfaces.

Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

International Nuclear Information System (INIS)

Zhu Qing; Ma Xiao-Hua; Chen Wei-Wei; Hou Bin; Zhu Jie-Jie; Zhang Meng; Chen Li-Xiang; Cao Yan-Rong; Hao Yue

2016-01-01

Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E v + 0.47 eV, and E v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E c − 0.56 eV are located in the channel, those with E c − 0.33 eV and E c − 0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state. (paper)

(Anti)hydrogen recombination studies in a nested Penning trap

International Nuclear Information System (INIS)

Quint, W.; Kaiser, R.; Hall, D.; Gabrielse, G.

1993-01-01

Extremely cold antiprotons, stored in Penning trap at 4 K, open the way toward the production and study of cold antihydrogen. We have begun experimentally investigating the possibility to recombine cold positrons and antiprotons within nested Penning traps. Trap potentials are adjusted to allow cold trapped protons (and positive helium ions) to pass through cold trapped electrons. Electrons, protons and ions are counted by ejecting them to a cold channel plate and by nondestructive radiofrequency techniques. The effect of the space charge of one trapped species upon another trapped species passing through is clearly observed. (orig.)

Entanglement and quantum state transfer between two atoms trapped in two indirectly coupled cavities

Science.gov (United States)

Zheng, Bin; Shen, Li-Tuo; Chen, Ming-Feng

2016-05-01

We propose a one-step scheme for implementing entanglement generation and the quantum state transfer between two atomic qubits trapped in two different cavities that are not directly coupled to each other. The process is realized through engineering an effective asymmetric X-Y interaction for the two atoms involved in the gate operation and an auxiliary atom trapped in an intermediate cavity, induced by virtually manipulating the atomic excited states and photons. We study the validity of the scheme as well as the influences of the dissipation by numerical simulation and demonstrate that it is robust against decoherence.

Capture, Electron-Cooling and Compression of Antiprotons in a Large Penning-Trap for Physics Experiments with an Ultra-Low Energy Extracted Antiproton Beam

CERN Multimedia

2002-01-01

% PS200 \\\\ \\\\The availability of ultra-low energy antiprotons is a crucial ingredient for the execution of the gravity measurements PS200. We have developed a method to provide such low energy antiprotons based on a large Penning trap (the PS200 catching trap). This system can accept a fast-extracted pulse from LEAR, reduce the energy of the antiprotons in the pulse from 5.9~MeV to several tens of kilovolts using a degrading foil, and then capture the antiprotons in a large Penning trap. These antiprotons are cooled by electrons previously admitted to the trap and are collected in a small region at the center of the trap. We have demonstrated our capability to capture up to 1~million antiprotons from LEAR in a single shot, electron cool these antiprotons, and transfer up to 95\\% of them into the inner, harmonic region. A storage time in excess of 1 hour was observed. These results have been obtained with the cryogenic trap vacuum coupled to a room temperature vacuum at about l0$ ^- ^{1} ^0 $ Torr, which is an...

Self-fields in free-electron lasers with planar wiggler and ion-channel guiding

International Nuclear Information System (INIS)

Farokhi, B; Jafary, F B; Maraghechi, B

2006-01-01

A theory of self-electric and self-magnetic fields of a relativistic electron beam passing through a one-dimensional planar wiggler and an ion-channel is presented. The equilibrium orbits and their stability, under the influence of self-electric and self-magnetic fields, are analysed. New unstable orbits, in the first part of the group I orbits, are found. It is shown that for a low energy and high density beam the self-fields can produce very large effects. Stabilities of quasi-steady-state orbits are investigated by analytical and numerical methods and perfect agreement was found. The theory of small signal gain is used to derive a formula for the gain with the self-field effects included. A numerical analysis is conducted to study the self-field effects on the quasi-steady-state orbits and the gain

Quantum technologies for solid state physics using cold trapped ions

International Nuclear Information System (INIS)

Ferdinand Schmidt-Kaler

2014-01-01

The quantum states of ions are perfectly controlled, and may be used for fundamental research in quantum physics, as highlighted by the Nobel Prize given to Dave Wineland in 2012. Two directions of quantum technologies, followed by the Mainz group, have high impact on solid state physics: I) The delivery of single cold ions on demand for the deterministic doping of solid state materials with nm spatial precision to generate design-structures optimized for quantum processors. II) The simulation of solid state relevant Hamiltonians with AMO systems of one or two dimensional arrays of trapped ions. I will talk about the recent progress in both fields. http://www.quantenbit.de/#Number Sign#/publications/(author)

Stable confinement of toroidal electron plasma in an internal conductor device Prototype-Ring Trap

International Nuclear Information System (INIS)

Saitoh, H.; Yoshida, Z.; Watanabe, S.

2005-01-01

A pure electron plasma has been produced in an internal conductor device Prototype-Ring Trap (Proto-RT). The temporal evolution of the electron plasma was investigated by the measurement of electrostatic fluctuations. Stable confinement was realized when the potential profile adjusted to match the magnetic surfaces. The confinement time varies as a function of the magnetic field strength and the neutral gas pressure, and is comparable to the diffusion time of electrons determined by the classical collisions with neutral gas. Although the addition of a toroidal magnetic field stabilized the electrostatic fluctuation of the plasma, the effects of the magnetic shear shortened the stable confinement time, possibly because of the obstacles of coil support structures

Spin resonance with trapped ions

Energy Technology Data Exchange (ETDEWEB)

Wunderlich, Ch; Balzer, Ch; Hannemann, T; Mintert, F; Neuhauser, W; Reiss, D; Toschek, P E [Institut fuer Laser-Physik, Universitaet Hamburg, Jungiusstrasse 9, 20355 Hamburg (Germany)

2003-03-14

A modified ion trap is described where experiments (in particular related to quantum information processing) that usually require optical radiation can be carried out using microwave or radio frequency electromagnetic fields. Instead of applying the usual methods for coherent manipulation of trapped ions, a string of ions in such a modified trap can be treated like a molecule in nuclear magnetic resonance experiments taking advantage of spin-spin coupling. The collection of trapped ions can be viewed as an N-qubit molecule with adjustable spin-spin coupling constants. Given N identically prepared quantum mechanical two-level systems (qubits), the optimal strategy to estimate their quantum state requires collective measurements. Using the ground state hyperfine levels of electrodynamically trapped {sup 171}Yb{sup +}, we have implemented an adaptive algorithm for state estimation involving sequential measurements on arbitrary qubit states.

Spin resonance with trapped ions

International Nuclear Information System (INIS)

Wunderlich, Ch; Balzer, Ch; Hannemann, T; Mintert, F; Neuhauser, W; Reiss, D; Toschek, P E

2003-01-01

A modified ion trap is described where experiments (in particular related to quantum information processing) that usually require optical radiation can be carried out using microwave or radio frequency electromagnetic fields. Instead of applying the usual methods for coherent manipulation of trapped ions, a string of ions in such a modified trap can be treated like a molecule in nuclear magnetic resonance experiments taking advantage of spin-spin coupling. The collection of trapped ions can be viewed as an N-qubit molecule with adjustable spin-spin coupling constants. Given N identically prepared quantum mechanical two-level systems (qubits), the optimal strategy to estimate their quantum state requires collective measurements. Using the ground state hyperfine levels of electrodynamically trapped 171 Yb + , we have implemented an adaptive algorithm for state estimation involving sequential measurements on arbitrary qubit states

Local charge trapping in Ge nanoclustersdetected by Kelvin probe force microscopy

Energy Technology Data Exchange (ETDEWEB)

Kondratenko, S.V., E-mail: kondr@univ.kiev.ua [Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Str., 01601, Kyiv (Ukraine); Lysenko, V.S. [Institute of Semiconductor Physics, 41 Prospect Nauki, 03028, Kyiv (Ukraine); Kozyrev, Yu. N. [O.O. Chuiko Institute of Surface Chemistry, 17 GeneralaNaumova Str. 03164, Kiev (Ukraine); Kratzer, M. [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria); Storozhuk, D.P.; Iliash, S.A. [Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Str., 01601, Kyiv (Ukraine); Czibula, C. [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria); Teichert, C., E-mail: teichert@unileoben.ac.at [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria)

2016-12-15

The understanding of local charge trapping on the nanoscale is crucial for the design of novel electronic devices and photodetectors based on SiGe nanoclusters (NCs). Here, the local spatial distribution of the surface potential of the Ge NCs was detected using Kelvin probe force microscopy (KPFM). Different surface potentials between Ge NCs and the wetting layer (WL) surface were detected at room temperature. Changes of the local contact potential differences (CPD) were studied after injection of electrons or holes into single Ge NCs on top of the Si layer using a conductive atomic force microscopy tip. The CPD image contrast was increased after electron injection by applying a forward bias to the n-tip/i-Ge NC/p-Si junction. Injecting holes into a single Ge NC was also accompanied by filling of two-dimensional states in the surrounding region, which is governed by leakage currents through WL or surface states and Coulomb charging effects. A long retention time of holes trapped by the Ge NC was found.

Population trapping: The mechanism for the lost resonance lines in Pm-like ions