Self-Aligned van der Waals Heterojunction Diodes and Transistors.

Science.gov (United States)

Sangwan, Vinod K; Beck, Megan E; Henning, Alex; Luo, Jiajia; Bergeron, Hadallia; Kang, Junmo; Balla, Itamar; Inbar, Hadass; Lauhon, Lincoln J; Hersam, Mark C

2018-02-14

A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS 2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS 2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS 2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

Experiments on high-power ion beam generation in self-insulated diodes

International Nuclear Information System (INIS)

Bystritskii, V.M.; Glyshko, Yu.A.; Sinerbrjukhov, A.A.; Kharlov, A.V.

1991-01-01

Experimental results are given on high-power ion beams (HPIB) generation in a vacuum spherical focusing diode with self-magnetic insulation, obtained from the nanosecond accelerator PARUS with 0.2-TW power and 60-ns pulse duration for a matched load. When the passive plasma source of the ions was used, the efficiency of the HPIB generation was measured to be as high as 20% for 700-kV diode voltage and 10-kA/cm 2 beam density in the focal plane. The application of a coaxial plasma opening switch (POS) prior to the diode resulted in a factor-of-1.8 increase in the diode power in comparison with a match operation in the absence of a POS. (author)

Quasi-CW diode-pumped self-starting adaptive laser with self-Q-switched output.

Science.gov (United States)

Smith, G; Damzen, M J

2007-05-14

An investigation is made into a quasi-CW (QCW) diode-pumped holographic adaptive laser utilising an ultra high gain (approximately 10(4)) Nd:YVO(4) bounce amplifier. The laser produces pulses at 1064 nm with energy approximately 0.6 mJ, duration laser configuration, the output was amplified to obtain pulses of approximately 5.6 mJ energy, approximately 7 ns duration and approximately 1 MW peak power. The output spatial quality is also M(2)diode-pumped self-adaptive holographic lasers can provide a useful source of high peak power, short duration pulses with excellent spatial quality and narrow linewidth spectrum.

DC Analysis of an Ideal Diode Network Using Its Decomposed Piecevise-Linear Model

Directory of Open Access Journals (Sweden)

Z. Kolka

1994-09-01

Full Text Available A new method of finding the operating points in circuits containing ideal diodes which utilizes the decomposed form of the state model of an one-dimensional piecewise-linear (PWL system is developed. The universal procedure shown gives all the existing solutions quite automatically.

Scanning For Hotspots In Lamp Filaments

Science.gov (United States)

Powers, Charles E.; Van Sant, Tim; Leidecker, Henning

1993-01-01

Scanning photometer designed for use in investigation of failures of incandescent lamp filaments. Maps brightness as function of position along each filament to identify bright (hot) spots, occurring at notches and signifying incipient breaks or rewelds. Also used to measure nonuniformity in outputs of such linear devices as light-emitting diodes, and to measure diffraction patterns of lenses.

Uniform irradiation using rotational-linear scanning method for narrow synchrotron radiation beam

International Nuclear Information System (INIS)

Nariyama, N.; Ohnishi, S.; Odano, N.

2004-01-01

At SPring-8, photon intensity monitors for synchrotron radiation have been developed. Using these monitors, the responses of radiation detectors and dosimeters to monoenergetic photons can be measured. In most cases, uniform irradiation to the sample is necessary. Here, two scanning methods are proposed. One is an XZ-linear scanning method, which moves the sample simultaneously in both the X and Z direction, that is, in zigzag fashion. The other is a rotational-linear scanning method, which rotates the sample moving in the X direction. To investigate the validity of the two methods, thermoluminescent dosimeters were irradiated with a broad synchrotron-radiation beam, and the readings from the two methods were compared with that of the dosimeters fixed in the beam. The results for both scanning methods virtually agreed with that of the fixed method. The advantages of the rotational-linear scanning method are that low- and medium-dose irradiation is possible, uniformity is excellent and the load to the scanning equipment is light: hence, this method is superior to the XZ-linear scanning method for most applications. (author)

Novel 755-nm diode laser vs. conventional 755-nm scanned alexandrite laser: Side-by-side comparison pilot study for thorax and axillary hair removal.

Science.gov (United States)

Paasch, Uwe; Wagner, Justinus A; Paasch, Hartmut W

2015-01-01

Alexandrite (755 nm) and diode lasers (800-810 nm) are commonly used for hair removal. The alexandrite laser technology is somewhat cumbersome whereas new diode lasers are more robust. Recently, alexandrite-like 755 nm wavelength diodes became available. To compare the efficacy, tolerability, and subject satisfaction of a 755 nm diode laser operated in conventional (HR) and non-conventional in-motion (SHR) modes with a conventional scanned alexandrite 755 nm laser for chest and axillary hair removal. A prospective, single-center, proof of principle study was designed to evaluate the safety, efficacy and handling of a 755 nm diode laser system in comparison to a standard alexandrite 755 nm scanning hair removal laser. The new 755 nm diode is suitable to be used in SHR and HR mode and has been tested for its safety, efficacy and handling in a volunteer with success. Overall, both systems showed a high efficacy in hair reduction (88.8% 755 nm diode laser vs. 77.7% 755 nm alexandrite laser). Also, during the study period, no severe adverse effects were reported. The new 755 nm diode laser is as effective and safe as the traditional 755 nm alexandrite laser. Additionally, treatment with the 755 nm diode laser with HR and SHR modes was found to be less painful.

Shot reproducibility of the self-magnetic-pinch diode at 4.5 MV

OpenAIRE

Nichelle Bennett; M. Dale Crain; Darryl W. Droemer; Raymond E. Gignac; Greg Lare; Isidro Molina; Robert Obregon; Chase C. Smith; Frank L. Wilkins; Dale R. Welch; Steve Cordova; Manuel L. Gallegos; Mark D. Johnston; Mark L. Kiefer; Joshua J. Leckbee

2014-01-01

In experiments conducted at Sandia National Laboratories’ RITS-6 accelerator, the self-magnetic-pinch diode exhibits significant shot-to-shot variability. Specifically, for identical hardware operated at the same voltage, some shots exhibit a catastrophic drop in diode impedance. A study is underway to identify sources of shot-to-shot variations which correlate with diode impedance collapse. The scope of this report is limited to data collected at 4.5-MV peak voltage and sources of variabilit...

The classical Pierce diode: Using particle simulations on linear and nonlinear behavior and final states

International Nuclear Information System (INIS)

Crystal, T.L.; Kuhn, S.; Birdsall, C.K.

1984-01-01

The classical Pierce diode is a simple 1-d system of two shorted metal plates, a cold beam of electrons injected from one side and a neutralizing background of rigid ions. While the plasma medium is technically stable, the finiteness of the Pierce system allows stable and unstable operation. It is usefully studied as an archetypical bounded plasma system, related e.g., to Q-machines, particle accelerators, thermionic converters. New particle simulations of the Pierce diode have successfully recovered many novel linear phenomena including the dominant linear eigenmodes (seen in the internal electrostatic fields), and the dominant and subdominant eigenfrequencies, (seen both in the internal electrostatics and in the external circuit current, J/sub ext/(t)). These simulation results conform very well to detailed predictions of a new linear analysis. The final (nonlinear) state recovered can show critical dependence on initial (linear perturbation) conditions, and can be made steady-state (d.c.) or periodic-oscillatory by simply changing the initial conditions by a factor of 10/sup -4/ or less. A third class of final state is also possible which has oscillations which seem to be nonperiodic

RANSAC approach for automated registration of terrestrial laser scans using linear features

Directory of Open Access Journals (Sweden)

K. Al-Durgham

2013-10-01

Full Text Available The registration process of terrestrial laser scans (TLS targets the problem of how to combine several laser scans in order to attain better information about features than what could be obtained through single scan. The main goal of the registration process is to estimate the parameters which determine geometrical variation between the origins of datasets collected from different locations. Scale, shifts, and rotation parameters are usually used to describe such variation. This paper presents a framework for the registration of overlapping terrestrial laser scans by establishing an automatic matching strategy that uses 3D linear features. More specifically, invariant separation characteristics between 3D linear features extracted from laser scans will be used to establish hypothesized conjugate linear features between the laser scans. These candidate matches are then used to geo-reference scans relative to a common reference frame. The registration workflow simulates the well-known RANndom Sample Consensus method (RANSAC for determining the registration parameters, whereas the iterative closest projected point (ICPP is utilized to determine the most probable solution of the transformation parameters from several solutions. The experimental results prove that the proposed methodology can be used for the automatic registration of terrestrial laser scans using linear features.

Modelling of the thermal parameters of high-power linear laser-diode arrays. Two-dimensional transient model

International Nuclear Information System (INIS)

Bezotosnyi, V V; Kumykov, Kh Kh

1998-01-01

A two-dimensional transient thermal model of an injection laser is developed. This model makes it possible to analyse the temperature profiles in pulsed and cw stripe lasers with an arbitrary width of the stripe contact, and also in linear laser-diode arrays. This can be done for any durations and repetition rates of the pump pulses. The model can also be applied to two-dimensional laser-diode arrays operating quasicontinuously. An analysis is reported of the influence of various structural parameters of a diode array on the thermal regime of a single laser. The temperature distributions along the cavity axis are investigated for different variants of mounting a crystal on a heat sink. It is found that the temperature drop along the cavity length in cw and quasi-cw laser diodes may exceed 20%. (lasers)

Limitation of the electron emission in an ion diode with magnetic self-insulation

International Nuclear Information System (INIS)

Pushkarev, A. I.; Isakova, Yu. I.; Guselnikov, V. I.

2011-01-01

The results of a study of the generation of a pulsed ion beam of gigawatt power formed by a diode with an explosive-emission potential electrode in a mode of magnetic self-insulation are presented. The studies were conducted at the TEMP-4M ion accelerator set in double pulse formation mode: the first pulse was negative (300-500 ns and 100-150 kV) and the second, positive (150 ns and 250-300 kV). The ion current density was 20-40 A/cm 2 ; the beam composition was protons and carbon ions. It was shown that plasma is effectively formed over the entire working surface of the graphite potential electrode. During the ion beam generation, a condition of magnetic cutoff of electrons along the entire length of the diode (B/B cr ≥ 4) is fulfilled. Because of the high drift rate, the residence time of the electrons and protons in the anode-cathode gap is 3-5 ns, while for the C + carbon ions, it is more than 8 ns. This denotes low efficiency of magnetic self-insulation in a diode of such a design. At the same time, it has been experimentally observed that, during the generation of ion current (second pulse), the electronic component of the total current is suppressed by a factor of 1.5-2 for a strip diode with plane and focusing geometry. A new model of the effect of limiting the electron emission explaining the decrease in the electronic component of the total current in a diode with magnetic self-insulation is proposed.

Development of a dual-energy silicon X-ray diode and its application to gadolinium imaging

International Nuclear Information System (INIS)

Sato, Yuichi; Sato, Eiichi; Ehara, Shigeru; Oda, Yasuyuki; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya

2015-01-01

To perform dual-energy X-ray imaging, we developed a dual-energy silicon X-ray diode (DE-Si-XD) consisting of two ceramic-substrate silicon X-ray diodes (Si-XD) and a 0.2-mm-thick copper filter. The Si-XD is a high-sensitivity Si photodiode selected for detecting X-rays. In the front Si-XD, X-ray photons from an X-ray tube are directly detected. Because low-energy photons are absorbed by the front Si-XD and the filter, the average photon energy increases when the back Si-XD is used. In the front Si-XD, the photocurrents flowing through the Si-XD are converted into voltages and amplified using current–voltage and voltage–voltage (V–V) amplifiers. The output from the V–V amplifier is input to an analog-digital converter through an integrator for smoothing the voltage. The same amplification method is also used in the back Si-XD. Dual-energy computed tomography (DE–CT) is accomplished by repeated linear scans and rotations of the object, and two projection curves of the object are obtained simultaneously by linear scanning at a tube voltage of 90 kV and a current of 1.0 mA. In the DE–CT, the exposure time for obtaining a tomogram is 10 min with scan steps of 0.5 mm and rotation steps of 1.0°. Using gadolinium-based contrast media, energy subtraction was performed. - Highlights: • Dual-energy X-ray diode consists of two Si diodes and a Cu filter. • Low and high-energy X-rays are detected using front and back diodes. • Two-different-energy tomograms were easily obtained simultaneously. • Gd-K-edge CT was accomplished using the back diode. • Energy subtraction was performed easily to image a target object

Screening of Carotenoids in Tomato Fruits by Using Liquid Chromatography with Diode Array-Linear Ion Trap Mass Spectrometry Detection.

Science.gov (United States)

Gentili, Alessandra; Caretti, Fulvia; Ventura, Salvatore; Pérez-Fernández, Virginia; Venditti, Alessandro; Curini, Roberta

2015-08-26

This paper presents an analytical strategy for a large-scale screening of carotenoids in tomato fruits by exploiting the potentialities of the triple quadrupole-linear ion trap hybrid mass spectrometer (QqQLIT). The method involves separation on C30 reversed-phase column and identification by means of diode array detection (DAD) and atmospheric pressure chemical ionization-mass spectrometry (APCI-MS). The authentic standards of six model compounds were used to optimize the separative conditions and to predict the chromatographic behavior of untargeted carotenoids. An information dependent acquisition (IDA) was performed with (i) enhanced-mass scan (EMS) as the survey scan, (ii) enhanced-resolution (ER) scan to obtain the exact mass of the precursor ions (16-35 ppm), and (iii) enhanced product ion (EPI) scan as dependent scan to obtain structural information. LC-DAD-multiple reaction monitoring (MRM) chromatograms were also acquired for the identification of targeted carotenoids occurring at low concentrations; for the first time, the relative abundance between the MRM transitions (ion ratio) was used as an extra tool for the MS distinction of structural isomers and the related families of geometrical isomers. The whole analytical strategy was high-throughput, because a great number of experimental data could be acquired with few analytical steps, and cost-effective, because only few standards were used; when applied to characterize some tomato varieties ('Tangerine', 'Pachino', 'Datterino', and 'Camone') and passata of 'San Marzano' tomatoes, our method succeeded in identifying up to 44 carotenoids in the 'Tangerine'" variety.

Linear variable voltage diode capacitor and adaptive matching networks

NARCIS (Netherlands)

Larson, L.E.; De Vreede, L.C.N.

2006-01-01

An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor

Self-diffraction and Z-scan studies in organic dye doped thin films

International Nuclear Information System (INIS)

Madhana Sundari, R.; Palanisamy, P.K.

2006-01-01

Self-diffraction in Acid Red 87 (eosin Y) dye doped thin films is studied using argon ion laser (514.5 nm). Growth of self-diffraction grating is monitored by measuring intensities of various diffraction orders. This study has resulted in the observation of phase variation between the contributing beams in any diffracted order. This change of phase is measured at various stages of grating formation. Due to self-phase modulation, circular concentric rings pattern is obtained in the far field. The observed fluctuation in this pattern may be due to the phase variation between the contributing beams in any diffracted order. Z-scan technique is used to study the optical non-linearity of the sample

Contribution of the backstreaming ions to the self-magnetic pinch (SMP) diode current

Science.gov (United States)

Mazarakis, Michael G.; Bennett, Nichelle; Cuneo, Michael E.; Fournier, Sean D.; Johnston, Mark D.; Kiefer, Mark L.; Leckbee, Joshua J.; Nielsen, Dan S.; Oliver, Bryan V.; Sceiford, Matthew E.; Simpson, Sean C.; Renk, Timothy J.; Ruiz, Carlos L.; Webb, Timothy J.; Ziska, Derek; Droemer, Darryl W.; Gignac, Raymond E.; Obregon, Robert J.; Wilkins, Frank L.; Welch, Dale R.

2018-04-01

The results presented here were obtained with a self-magnetic pinch (SMP) diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulse of six 1.3 MV inductively insulated cavities. The RITS driver together with the SMP diode has produced x-ray spots of the order of 1 mm in diameter and doses adequate for the radiographic imaging of high area density objects. Although, through the years, a number of different types of radiographic electron diodes have been utilized with SABER, HERMES III and RITS accelerators, the SMP diode appears to be the most successful and simplest diode for the radiographic investigation of various objects. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target and second to try to evaluate the energy of those ions and hence the Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage adder utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the A-K gap is problematic. This is even more difficult in an SMP diode where the A-K gap is very small (˜1 cm) and the diode region very hostile. The accelerating voltage quoted in the literature is from estimates based on the measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus, it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high-Z metals in order to produce copious and energetic flash x-rays. It was established experimentally that the back-streaming ion currents are a strong function of the anode materials and their stage of cleanness. We have measured the back-streaming ion currents emitted from the anode and propagating

The impact of plasma dynamics on the self-magnetic-pinch diode impedance

International Nuclear Information System (INIS)

Bennett, Nichelle; Crain, M. Dale; Droemer, Darryl W.; Gignac, Raymond E.; Molina, Isidro; Obregon, Robert; Smith, Chase C.; Wilkins, Frank L.; Welch, Dale R.; Webb, Timothy J.; Mazarakis, Michael G.; Kiefer, Mark L.; Johnston, Mark D.; Leckbee, Joshua J.; Nielsen, Dan; Romero, Tobias; Simpson, Sean; Ziska, Derek

2015-01-01

The self-magnetic-pinch diode is being developed as an intense electron beam source for pulsed-power-driven x-ray radiography. The basic operation of this diode has long been understood in the context of pinched diodes, including the dynamic effect that the diode impedance decreases during the pulse due to electrode plasma formation and expansion. Experiments being conducted at Sandia National Laboratories' RITS-6 accelerator are helping to characterize these plasmas using time-resolved and time-integrated camera systems in the x-ray and visible. These diagnostics are analyzed in conjunction with particle-in-cell simulations of anode plasma formation and evolution. The results confirm the long-standing theory of critical-current operation with the addition of a time-dependent anode-cathode gap length. The results may suggest that anomalous impedance collapse is driven by increased plasma radial drift, leading to larger-than-average ion v r × B θ acceleration into the gap

An electron beam linear scanning mode for industrial limited-angle nano-computed tomography

Science.gov (United States)

Wang, Chengxiang; Zeng, Li; Yu, Wei; Zhang, Lingli; Guo, Yumeng; Gong, Changcheng

2018-01-01

Nano-computed tomography (nano-CT), which utilizes X-rays to research the inner structure of some small objects and has been widely utilized in biomedical research, electronic technology, geology, material sciences, etc., is a high spatial resolution and non-destructive research technique. A traditional nano-CT scanning model with a very high mechanical precision and stability of object manipulator, which is difficult to reach when the scanned object is continuously rotated, is required for high resolution imaging. To reduce the scanning time and attain a stable and high resolution imaging in industrial non-destructive testing, we study an electron beam linear scanning mode of nano-CT system that can avoid mechanical vibration and object movement caused by the continuously rotated object. Furthermore, to further save the scanning time and study how small the scanning range could be considered with acceptable spatial resolution, an alternating iterative algorithm based on ℓ0 minimization is utilized to limited-angle nano-CT reconstruction problem with the electron beam linear scanning mode. The experimental results confirm the feasibility of the electron beam linear scanning mode of nano-CT system.

Electron dosimetry in irradiation processing with rad-hard diodes

International Nuclear Information System (INIS)

Santos, Thais Cavalheri dos

2012-01-01

This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar® window and LEMO® connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for electron beams within the

Experimental study of self magnetic pinch diode as flash radiography source at 4 megavolt

International Nuclear Information System (INIS)

Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Maisonny, Rémi; Toury, Martial; Hourdin, Laurent; Cartier, Frédéric; Cartier, Stéphanie; D'Almeida, Thierry; Delbos, Christophe; Garrigues, Alain; Plouhinec, Damien; Ritter, Sandra; Sol, David; Zucchini, Frédéric; Caron, Michel

2013-01-01

The Self Magnetic Pinch (SMP) diode is a potential high-brightness X-ray source for high voltage generators (2–10 MV) that has shown good reliability for flash radiography applications [D. D. Hinchelwood et al., “High power self-pinch diode experiments for radiographic applications” IEEE Trans. Plasma Sci. 35(3), 565–572 (2007)]. We have studied this diode at about 4 MV, driven by the ASTERIX generator operated at the CEA/GRAMAT [G. Raboisson et al., “ASTERIX, a high intensity X-ray generator,” in Proceedings of the 7th IEEE Pulsed Power Conference (1989), pp. 567–570]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode is modified in order to set up flash radiographic diodes. A previous set of radiographic experiments was carried out on ASTERIX with a Negative Polarity Rod Pinch (NPRP) diode [B. Etchessahar et al., “Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV,” Phys. Plasmas 19(9), 093104 (2012)]. The SMP diode which is examined in the present study provides an alternative operating point on the same generator and a different radiographic performance: 142 ± 11 rad at 1 m dose (Al) for a 3.46 ± 0.42 mm spot size (1.4× FWHM of the LSF). This performance is obtained in a reproducible and robust nominal configuration. However, several parametric variations were also tested, such as cathode diameter and anode/cathode gap. They showed that an even better performance is accessible after optimization, in particular, a smaller spot size (<3 mm). Numbers of electrical, optical, and X-ray diagnostics have been implemented in order to gain more insight in the diode physics and to optimize it further. For the first time in France, visible and laser imaging of the SMP diode has been realized, from a radial point of view, thus, providing key information on the electrode

An overview of self-switching diode rectifiers using green materials

Science.gov (United States)

Kasjoo, Shahrir Rizal; Zailan, Zarimawaty; Zakaria, Nor Farhani; Isa, Muammar Mohamad; Arshad, Mohd Khairuddin Md; Taking, Sanna

2017-09-01

A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar architecture of SSD not only makes the fabrication process of the device faster, simpler and at a lower cost when compared with other rectifying diodes, but also allows the use of various materials to realize and fabricate SSDs. This includes the utilization of `green' materials such as organic and graphene thin films for environmental sustainability. This paper reviews the properties of current `green' SSD rectifiers with respect to their operating frequencies and rectifying performances, including responsivity and noise-equivalent power of the devices, along with the applications.

Shot reproducibility of the self-magnetic-pinch diode at 4.5 MV

Directory of Open Access Journals (Sweden)

Nichelle Bennett

2014-05-01

Full Text Available In experiments conducted at Sandia National Laboratories’ RITS-6 accelerator, the self-magnetic-pinch diode exhibits significant shot-to-shot variability. Specifically, for identical hardware operated at the same voltage, some shots exhibit a catastrophic drop in diode impedance. A study is underway to identify sources of shot-to-shot variations which correlate with diode impedance collapse. The scope of this report is limited to data collected at 4.5-MV peak voltage and sources of variability which occur away from the diode, such as sheath electron emission and trajectories, variations in pulsed power, load and transmission line alignment, and different field shapers. We find no changes in the transmission line hardware, alignment, or hardware preparation methods which correlate with impedance collapse. However, in classifying good versus poor shots, we find that there is not a continuous spectrum of diode impedance behavior but that the good and poor shots can be grouped into two distinct impedance profiles. In poor shots, the sheath current in the load region falls from 16%–30% of the total current to less than 10%. This result will form the basis of a follow-up study focusing on the variability resulting from diode physics.

Non-Linear Structural Dynamics Characterization using a Scanning Laser Vibrometer

Science.gov (United States)

Pai, P. F.; Lee, S.-Y.

2003-01-01

This paper presents the use of a scanning laser vibrometer and a signal decomposition method to characterize non-linear dynamics of highly flexible structures. A Polytec PI PSV-200 scanning laser vibrometer is used to measure transverse velocities of points on a structure subjected to a harmonic excitation. Velocity profiles at different times are constructed using the measured velocities, and then each velocity profile is decomposed using the first four linear mode shapes and a least-squares curve-fitting method. From the variations of the obtained modal \\ielocities with time we search for possible non-linear phenomena. A cantilevered titanium alloy beam subjected to harmonic base-excitations around the second. third, and fourth natural frequencies are examined in detail. Influences of the fixture mass. gravity. mass centers of mode shapes. and non-linearities are evaluated. Geometrically exact equations governing the planar, harmonic large-amplitude vibrations of beams are solved for operational deflection shapes using the multiple shooting method. Experimental results show the existence of 1:3 and 1:2:3 external and internal resonances. energy transfer from high-frequency modes to the first mode. and amplitude- and phase- modulation among several modes. Moreover, the existence of non-linear normal modes is found to be questionable.

Investigation of magnetically self-insulated effect in an ion diode with an explosive emission potential electrode

International Nuclear Information System (INIS)

Pushkarev, A. I.; Isakova, J. I.; Saltimakov, M. S.; Sazonov, R. V.

2010-01-01

The results of an experimental investigation of a magnetically self-insulated effect in an ion diode in bipolar-pulse mode are presented. The investigations were accomplished at the TEMP-4M accelerator by formation of a first negative pulse (100 ns, 150-200 kV) and a second positive pulse (80 ns, 200-300 kV) [G. E. Remnev et al., Surf. Coat. Technol. 114, 206 (1999)]. Plasma behavior in the anode-cathode gap was analyzed according to the current-voltage characteristics of the diode with a time resolution of 0.5 ns. It is shown that during the discrete emissive surface mode, the magnetic field influence on plasma dynamics is slight. During the space charge limitation mode, the current-voltage characteristics of the diode are well-described by the Child-Langmuir ratio. The drift speed of electrons in the diode exceeds 80 mm/ns and the effect of magnetic insulation is insignificant. It was discovered, when plasma formation at the potential electrode is complete and up until the second positive pulse that the plasma speed is constant and equals to 1.3±0.2 cm/μs. After the voltage polarity at the potential electrode changes (second pulse), plasma breakup at the anode-cathode gap takes place. The impedance of the diode begins to increase and, when the total current is more than 30 kA, the diode impedance exceeds the calculated values by more than three times. The energy efficiency and limiting characteristics of the magnetically self-insulated diode are determined.

Self-magnetically-insulated 'plasma-focus diode' as a new source of an intence pulsed light-ion beam

International Nuclear Information System (INIS)

Takahashi, Akira; Aga, Keigo; Masugata, Katsumi; Ito, Michiaki; Yatsui, Kiyoshi

1986-01-01

A new and simple type of self-magnetically-insulated diode named ''Plasma-Focus Diode'' has been successfully developed, where anode and cathode are constituted by a pair of coaxial cylindrical electrodes similarly to a Mather-type plasma-focus device. Operating conditions are typically as follows: inductively-calibrated diode voltage ∼ 660 kV, diode current ∼ 142 kA, total ion current ∼ 32 kA, pulse width ∼ 90 ns and diode efficiency ∼ 22 %. Multiple-shots operation more than 50 shots has been possible without changing flashboard. Local divergence angle has been observed to be 0.9 deg ∼ 1.6 deg. Using such a simple ion diode, we have demonstrated a possibility of high concentration of beam-power density onto a target placed at the center. (author)

The Pierce-diode approximation to the single-emitter plasma diode

International Nuclear Information System (INIS)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-01-01

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ε,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions

Effect of aromatic SAMs molecules on graphene/silicon schottky diode performance

OpenAIRE

Yağmurcukardeş, Nesli; Aydın, Hasan; Can, Mustafa; Yanılmaz, Alper; Mermer, Ömer; Okur, Salih; Selamet, Yusuf

2016-01-01

Au/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron ...

High Resolution Trichromatic Road Surface Scanning with a Line Scan Camera and Light Emitting Diode Lighting for Road-Kill Detection

Directory of Open Access Journals (Sweden)

Gil Lopes

2016-04-01

Full Text Available This paper presents a road surface scanning system that operates with a trichromatic line scan camera with light emitting diode (LED lighting achieving road surface resolution under a millimeter. It was part of a project named Roadkills—Intelligent systems for surveying mortality of amphibians in Portuguese roads, sponsored by the Portuguese Science and Technology Foundation. A trailer was developed in order to accommodate the complete system with standalone power generation, computer image capture and recording, controlled lighting to operate day or night without disturbance, incremental encoder with 5000 pulses per revolution attached to one of the trailer wheels, under a meter Global Positioning System (GPS localization, easy to utilize with any vehicle with a trailer towing system and focused on a complete low cost solution. The paper describes the system architecture of the developed prototype, its calibration procedure, the performed experimentation and some obtained results, along with a discussion and comparison with existing systems. Sustained operating trailer speeds of up to 30 km/h are achievable without loss of quality at 4096 pixels’ image width (1 m width of road surface with 250 µm/pixel resolution. Higher scanning speeds can be achieved by lowering the image resolution (120 km/h with 1 mm/pixel. Computer vision algorithms are under development to operate on the captured images in order to automatically detect road-kills of amphibians.

High Resolution Trichromatic Road Surface Scanning with a Line Scan Camera and Light Emitting Diode Lighting for Road-Kill Detection.

Science.gov (United States)

Lopes, Gil; Ribeiro, A Fernando; Sillero, Neftalí; Gonçalves-Seco, Luís; Silva, Cristiano; Franch, Marc; Trigueiros, Paulo

2016-04-19

This paper presents a road surface scanning system that operates with a trichromatic line scan camera with light emitting diode (LED) lighting achieving road surface resolution under a millimeter. It was part of a project named Roadkills-Intelligent systems for surveying mortality of amphibians in Portuguese roads, sponsored by the Portuguese Science and Technology Foundation. A trailer was developed in order to accommodate the complete system with standalone power generation, computer image capture and recording, controlled lighting to operate day or night without disturbance, incremental encoder with 5000 pulses per revolution attached to one of the trailer wheels, under a meter Global Positioning System (GPS) localization, easy to utilize with any vehicle with a trailer towing system and focused on a complete low cost solution. The paper describes the system architecture of the developed prototype, its calibration procedure, the performed experimentation and some obtained results, along with a discussion and comparison with existing systems. Sustained operating trailer speeds of up to 30 km/h are achievable without loss of quality at 4096 pixels' image width (1 m width of road surface) with 250 µm/pixel resolution. Higher scanning speeds can be achieved by lowering the image resolution (120 km/h with 1 mm/pixel). Computer vision algorithms are under development to operate on the captured images in order to automatically detect road-kills of amphibians.

Characterization of the self magnetic pinch diode at high voltages for flash radiography

International Nuclear Information System (INIS)

Cordova, Steve Ray; Portillo, Salvador; Oliver, Bryan Velten; Ziska, Derek Raymond; Crotch, Ian; Threadgold, James R.

2008-01-01

The Sandia Laboratories Advanced Radiographic Technologies Department, in collaboration with the United Kingdom Atomic Weapons Establishment, has been conducting research into the development of the Self-Magnetic-Pinched diode as an x-ray source suitable for flash radiographic experiments. We have demonstrated that this source is capable of meeting and exceeding the initial requirements of 250 rads (measured at one meter) with a 2.75 mm source spot-size. Recent experiments conducted on the RITS-6 accelerator have demonstrated the ability of this diode to meet intermediate requirements with a sub 3 mm source spot size and a dose in excess of 400 rads at one meter

Silicon-on-Insulator Lateral-Insulated-Gate-Bipolar-Transistor with Built-in Self-anti-ESD Diode

Directory of Open Access Journals (Sweden)

Xiaojun Cheng

2014-05-01

Full Text Available Power SOI (Silicon-On-Insulator devices have an inherent sandwich structure of MOS (Metal-Oxide-Semiconductor gate which is very easy to suffer ESD (Electro-Static Discharge overstress. To solve this reliability problem, studies on design and modification of a built-in self-anti-ESD diode for a preliminarily optimized high voltage SOI LIGBT (Lateral-Insulated-Gate-Bipolar-Transistor were carried out on the Silvaco TCAD (Technology-Computer-Aided-Design platform. According to the constrains of the technological process, the new introduction of the N+ doped region into P-well region that form the built-in self-anti-ESD diode should be done together with the doping of source under the same mask. The modifications were done by adjusting the vertical impurity profile in P-well into retrograde distribution and designing a cathode plate with a proper length to cover the forward depletion terminal and make sure that the thickness of the cathode plate is the same as that of the gate plate. The simulation results indicate that the modified device structure is compatible with the original one in process and design, the breakdown voltage margin of the former was expanded properly, and both the transient cathode voltages are clamped low enough very quickly. Therefore, the design and optimization results of the modified device structure of the built-in self-anti-ESD diode for the given SOI LIGBT meet the given requirements.

Impact self-excited vibrations of linear motor

Science.gov (United States)

Zhuravlev, V. Ph.

2010-08-01

Impact self-exciting vibration modes in a linear motor of a monorail car are studied. Existence and stability conditions of self-exciting vibrations are found. Ways of avoiding the vibrations are discussed.

Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits.

Science.gov (United States)

Si, Jia; Liu, Lijun; Wang, Fanglin; Zhang, Zhiyong; Peng, Lian-Mao

2016-07-26

A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed, simulated, and realized on semiconducting carbon nanotubes (CNTs) through a doping-free fabrication process. The relationships between the performance and material/structural parameters of the SGD are explored through numerical simulation and verified by experiment results. Based on these results, performance optimization strategy is outlined, and high performance CNT SGDs are fabricated and demonstrated to surpass other published CNT diodes. In particular the CNT SGD exhibits high rectifier factor of up to 1.4 × 10(6) while retains large on-state current. Benefiting from high yield and stability, CNT SGDs are used for constructing logic and analog integrated circuits. Two kinds of basic digital gates (AND and OR) have been realized on chip through using CNT SGDs and on-chip Ti wire resistances, and a full wave rectifier circuit has been demonstrated through using two CNT SGDs. Although demonstrated here using CNT SGDs, this device structure may in principle be implemented using other semiconducting nanomaterials, to provide ideas and building blocks for electronic applications based on nanoscale materials.

Contribution of the backstreaming ions to the Self-Magnetic pinch (SMP) diode current

Energy Technology Data Exchange (ETDEWEB)

Mazarakis, Michael G.; Cuneo, Michael E.; Fournier, Sean D.; Johnston, Mark D.; Kiefer, Mark L.; Leckbee, Joshua J.; Nielsen, Dan S.; Oliver, Bryan V.; Simpson, Sean; Renk, Timothy J.; Webb, Timothy J.; Ziska, Derek; Bennett, Nichelle; Droemer, Darryl W.; Cignac, Raymond E.; Obregon, Robert J.; Smith, Chase C.; Wilkins, Frank L.; Welch, Dale R.

2016-08-08

Summary form only given. The results presented here were obtained with an SMP diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulses of six 1.3 MV inductively insulated cavities. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target to the diode beam current, and second to try to evaluate the energy of those ions and hence the actual Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage adder (IVA) utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the anode-cathode (A-K) gap is problematic. The accelerating voltage quoted in the literature is from estimates based on measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high Z metals in order to produce copious and energetic flash x-rays. The backstreaming currents are a strong fraction of the anode materials and their stage of cleanness and gas adsorption. We have measured the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatments, such as heating to very high temperatures with DC and pulsed current, with RF plasma cleaning and with both plasma cleaning and heating. Finally, we have also evaluated the A-K gap voltage by ion filtering techniques.

Shot-to-shot reproducibility of a self-magnetically insulated ion diode

International Nuclear Information System (INIS)

Pushkarev, A. I.; Isakova, Yu. I.; Khailov, I. P.

2012-01-01

In this paper we present the analysis of shot to shot reproducibility of the ion beam which is formed by a self-magnetically insulated ion diode with an explosive emission graphite cathode. The experiments were carried out with the TEMP-4M accelerator operating in double-pulse mode: the first pulse is of negative polarity (300–500 ns, 100–150 kV), and this is followed by a second pulse of positive polarity (150 ns, 250–300 kV). The ion current density was 10–70 A/cm 2 depending on the diode geometry. The beam was composed from carbon ions (80%–85%) and protons. It was found that shot to shot variation in the ion current density was about 35%–40%, whilst the diode voltage and current were comparatively stable with the variation limited to no more than 10%. It was shown that focusing of the ion beam can improve the stability of the ion current generation and reduces the variation to 18%–20%. In order to find out the reason for the shot-to-shot variation in ion current density we examined the statistical correlation between the current density of the accelerated beam and other measured characteristics of the diode, such as the accelerating voltage, total current, and first pulse duration. The correlation between the ion current density measured simultaneously at different positions within the cross-section of the beam was also investigated. It was shown that the shot-to-shot variation in ion current density is mainly attributed to the variation in the density of electrons diffusing from the drift region into the A-K gap.

Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

International Nuclear Information System (INIS)

Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T; Song, A M

2009-01-01

In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

Energy Technology Data Exchange (ETDEWEB)

Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T [Departamento de Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain); Song, A M, E-mail: indy@usal.e [School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD (United Kingdom)

2009-11-15

In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

High Performance self-injection locked 524 nm green laser diode for high bitrate visible light communications

KAUST Repository

Shamim, Md. Hosne Mobarok; Shemis, Mohamed; Shen, Chao; Oubei, Hassan M.; Ng, Tien Khee; Ooi, Boon S.; Khan, Mohammed Zahed Mustafa

2018-01-01

First demonstration of self-injection locking on 524 nm visible laser diode is presented. Enhancement by ~440 MHz (~30%) in modulation bandwidth, ~7 times reduction in lasing linewidth, and ~10 dB improvement in SMSR is achieved.

High Performance self-injection locked 524 nm green laser diode for high bitrate visible light communications

KAUST Repository

Shamim, Md. Hosne Mobarok

2018-03-05

First demonstration of self-injection locking on 524 nm visible laser diode is presented. Enhancement by ~440 MHz (~30%) in modulation bandwidth, ~7 times reduction in lasing linewidth, and ~10 dB improvement in SMSR is achieved.

Destructive Single-Event Effects in Diodes

Science.gov (United States)

Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

2017-01-01

In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

SU-F-E-06: Dosimetric Characterization of Small Photons Beams of a Novel Linear Accelerator

Energy Technology Data Exchange (ETDEWEB)

Almonte, A; Polanco, G; Sanchez, E [Instituto Oncologico Dr. Heriberto Pieter, Santo Domingo, Distrito Nacional (Dominican Republic)

2016-06-15

Purpose: The aim of the present contribution was to measure the main dosimetric quantities of small fields produced by UNIQUE and evaluate its matching with the corresponding dosimetric data of one 21EX conventional linear accelerator (Varian) in operation at the same center. The second step was to evaluate comparative performance of the EDGE diode detector and the PinPoint micro-ionization chamber for dosimetry of small fields. Methods: UNIQUE is configured with MLC (120 leaves with 0.5 cm leaf width) and a single low photon energy of 6 MV. Beam data were measured with scanning EDGE diode detector (volume of 0.019 mm{sup 3}), a PinPoint micro-ionization chamber (PTW) and for larger fields (≥ 4×4cm{sup 2}) a PTW Semi flex chamber (0.125 cm{sup 3}) was used. The scanning system used was the 3D cylindrical tank manufactured by Sun Nuclear, Inc. The measurement of PDD and profiles were done at 100 cm SSD and 1.5 depth; the relative output factors were measured at 10 cm depth. Results: PDD and the profile data showed less than 1% variation between the two linear accelerators for fields size between 2×2 cm{sup 2} and 5×5cm{sup 2}. Output factor differences was less than 1% for field sizes between 3×3 cm{sup 2} and 10×10 cm{sup 2} and less of 1.5 % for fields of 1.5×1.5 cm{sup 2} and 2×2 cm{sup 2} respectively. The dmax value of the EDGE diode detector, measured from the PDD, was 8.347 mm for 0.5×0,5cm{sup 2} for UNIQUE. The performance of EDGE diode detector was comparable for all measurements in small fields. Conclusion: UNIQUE linear accelerator show similar dosimetrics characteristics as conventional 21EX Varian linear accelerator for small, medium and large field sizes.EDGE detector show good performance by measuring dosimetrics quantities in small fields typically used in IMRT and radiosurgery treatments.

Investigation of Self-injection Locked Visible Laser Diodes for High Bit-rate Visible Light Communication

KAUST Repository

Shamim, Md. Hosne Mobarok; Shemis, Mohamed; Shen, Chao; Oubei, Hassan M.; Ng, Tien Khee; Ooi, Boon S.; Khan, Mohammed Zahed Mustafa

2018-01-01

-mode-suppression-ratio was considerably increased in all the cases, reaching as high as ~20 dB in self-injection locked blue laser diode, thus enabling a close to single mode operation. This work paves the way for attaining high speed optical wireless communications by overcoming

Magnetically insulated H- diodes

International Nuclear Information System (INIS)

Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

1993-01-01

At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

Diode pumped actively Q-switched Nd:YVO4 self-Raman laser

International Nuclear Information System (INIS)

Su Fufang; Zhang Xingyu; Wang Qingpu; Ding Shuanghong; Jia Peng; Li Shutao; Fan Shuzhen; Zhang Chen; Liu Bo

2006-01-01

By using Nd:YVO 4 as the gain medium and the Raman medium simultaneously, the actively Q-switched operation of the self-Raman Nd:YVO 4 laser at 1176 nm was realized. The output characteristics including the average power, pulse energy and pulse width versus the incident pump power and pulse repetition rate were investigated. At a pulse repetition rate of 20 kHz an average power up to 0.57 W was obtained with the incident pump power of 10.2 W, corresponding to a conversion efficiency of 5.6% with respect to the diode laser input power. Meanwhile, an analysis of the self-Raman Nd:YVO 4 laser was carried out by using the rate equations. The obtained theoretical results were in agreement with the experimental results on the whole

The Use of Self-scanned Silicon Photodiode Arrays for Astronomical Spectrophotometry

Science.gov (United States)

Cochran, A. L.

1984-01-01

The use of a Reticon self scanned silicon photodiode array for precision spectrophotometry is discussed. It is shown that internal errors are + or - 0.003 mag. Observations obtained with a photodiode array are compared with observations obtained with other types of detectors with agreement, from 3500 A to 10500 A, of 1%. The photometric properties of self scanned photodiode arrays are discussed. Potential pitfalls are given.

A laser sheet self-calibration method for scanning PIV

Science.gov (United States)

Knutsen, Anna N.; Lawson, John M.; Dawson, James R.; Worth, Nicholas A.

2017-10-01

Knowledge of laser sheet position, orientation, and thickness is a fundamental requirement of scanning PIV and other laser-scanning methods. This paper describes the development and evaluation of a new laser sheet self-calibration method for stereoscopic scanning PIV, which allows the measurement of these properties from particle images themselves. The approach is to fit a laser sheet model by treating particles as randomly distributed probes of the laser sheet profile, whose position is obtained via a triangulation procedure enhanced by matching particle images according to their variation in brightness over a scan. Numerical simulations and tests with experimental data were used to quantify the sensitivity of the method to typical experimental error sources and validate its performance in practice. The numerical simulations demonstrate the accurate recovery of the laser sheet parameters over range of different seeding densities and sheet thicknesses. Furthermore, they show that the method is robust to significant image noise and camera misalignment. Tests with experimental data confirm that the laser sheet model can be accurately reconstructed with no impairment to PIV measurement accuracy. The new method is more efficient and robust in comparison with the standard (self-) calibration approach, which requires an involved, separate calibration step that is sensitive to experimental misalignments. The method significantly improves the practicality of making accurate scanning PIV measurements and broadens its potential applicability to scanning systems with significant vibrations.

Rectification of graphene self-switching diodes: First-principles study

Science.gov (United States)

Ghaziasadi, Hassan; Jamasb, Shahriar; Nayebi, Payman; Fouladian, Majid

2018-05-01

The first principles calculations based on self-consistent charge density functional tight-binding have performed to investigate the electrical properties and rectification behavior of the graphene self-switching diodes (GSSD). The devices contained two structures called CG-GSSD and DG-GSSD which have metallic or semiconductor gates depending on their side gates have a single or double hydrogen edge functionalized. We have relaxed the devices and calculated I-V curves, transmission spectrums and maximum rectification ratios. We found that the DG-MSM devices are more favorable and more stable. Also, the DG-MSM devices have better maximum rectification ratios and current. Moreover, by changing the side gates widths and behaviors from semiconductor to metal, the threshold voltages under forward bias changed from +1.2 V to +0.3 V. Also, the maximum currents are obtained from 1.12 μA to 10.50 μA. Finally, the MSM and SSS type of all devices have minimum and maximum values of voltage threshold and maximum rectification ratios, but the 769-DG devices don't obey this rule.

Microcontact printing of self-assembled monolayers to pattern the light-emission of polymeric light-emitting diodes

NARCIS (Netherlands)

Brondijk, J. J.; Li, X.; Akkerman, H. B.; Blom, P. W. M.; de Boer, B.

By patterning a self-assembled monolayer (SAM) of thiolated molecules with opposing dipole moments on a gold anode of a polymer light-emitting diode (PLED), the charge injection and, therefore, the light-emission of the device can be controlled with a micrometer-scale resolution. Gold surfaces were

Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

Science.gov (United States)

Löbl, Matthias C.; Söllner, Immo; Javadi, Alisa; Pregnolato, Tommaso; Schott, Rüdiger; Midolo, Leonardo; Kuhlmann, Andreas V.; Stobbe, Søren; Wieck, Andreas D.; Lodahl, Peter; Ludwig, Arne; Warburton, Richard J.

2017-10-01

We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a 162.5 -nm -thin diode structure. The quantum dots are just 88 nm from the top GaAs surface. We design and realize a p -i -n -i -n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below 2 μ eV , just a factor of 2 above the transform limit. Clear optical spin pumping is observed in a magnetic field of 0.5 T in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots—highly coherent single-photon generation, ultrafast optical spin manipulation—in the thin diodes required in quantum nanophotonics and nanophononics applications.

Frequency-scanning MALDI linear ion trap mass spectrometer for large biomolecular ion detection.

Science.gov (United States)

Lu, I-Chung; Lin, Jung Lee; Lai, Szu-Hsueh; Chen, Chung-Hsuan

2011-11-01

This study presents the first report on the development of a matrix-assisted laser desorption ionization (MALDI) linear ion trap mass spectrometer for large biomolecular ion detection by frequency scan. We designed, installed, and tested this radio frequency (RF) scan linear ion trap mass spectrometer and its associated electronics to dramatically extend the mass region to be detected. The RF circuit can be adjusted from 300 to 10 kHz with a set of operation amplifiers. To trap the ions produced by MALDI, a high pressure of helium buffer gas was employed to quench extra kinetic energy of the heavy ions produced by MALDI. The successful detection of the singly charged secretory immunoglobulin A ions indicates that the detectable mass-to-charge ratio (m/z) of this system can reach ~385 000 or beyond.

Simultaneous and Sequential MS/MS Scan Combinations and Permutations in a Linear Quadrupole Ion Trap.

Science.gov (United States)

Snyder, Dalton T; Szalwinski, Lucas J; Cooks, R Graham

2017-10-17

Methods of performing precursor ion scans as well as neutral loss scans in a single linear quadrupole ion trap have recently been described. In this paper we report methodology for performing permutations of MS/MS scan modes, that is, ordered combinations of precursor, product, and neutral loss scans following a single ion injection event. Only particular permutations are allowed; the sequences demonstrated here are (1) multiple precursor ion scans, (2) precursor ion scans followed by a single neutral loss scan, (3) precursor ion scans followed by product ion scans, and (4) segmented neutral loss scans. (5) The common product ion scan can be performed earlier in these sequences, under certain conditions. Simultaneous scans can also be performed. These include multiple precursor ion scans, precursor ion scans with an accompanying neutral loss scan, and multiple neutral loss scans. We argue that the new capability to perform complex simultaneous and sequential MS n operations on single ion populations represents a significant step in increasing the selectivity of mass spectrometry.

Laser-assisted selective fusing of thermal sprayed Ni-based self-fluxing alloys by using high-power diode lasers

Science.gov (United States)

Chun, Eun-Joon; Kim, Min-Su; Nishikawa, Hiroshi; Park, Changkyoo; Suh, Jeong

2018-03-01

Fusing treatment of Ni-based self-fluxing alloys (Metco-16C and 1276F) was performed using high-power diode lasers to control the temperature of the substrate's surface in real time. The effects of the fusing treatment temperature on the microstructural change and hardness distribution were also investigated. For Metco-16C and 1276F, the macrostructural inhomogeneity (voids) within the thermal sprayed layer decreased considerably as the fusing temperature increased. For both self-fluxing alloys, the optimal temperature for fusing was approximately 1423 K (for Metco-16C) and 1373 K (for 1276F), both of which are within the solid state temperature range; these temperatures maximize the alloy hardness together with the macrostructural homogeneity. In this temperature range, the microstructure consists of a lamellar-structured matrix phase with fine (diode laser system.

[A Method for Selecting Self-Adoptive Chromaticity of the Projected Markers].

Science.gov (United States)

Zhao, Shou-bo; Zhang, Fu-min; Qu, Xing-hua; Zheng, Shi-wei; Chen, Zhe

2015-04-01

The authors designed a self-adaptive projection system which is composed of color camera, projector and PC. In detail, digital micro-mirror device (DMD) as a spatial light modulator for the projector was introduced in the optical path to modulate the illuminant spectrum based on red, green and blue light emitting diodes (LED). However, the color visibility of active markers is affected by the screen which has unknown reflective spectrum as well. Here active markers are projected spot array. And chromaticity feature of markers is sometimes submerged in similar spectral screen. In order to enhance the color visibility of active markers relative to screen, a method for selecting self-adaptive chromaticity of the projected markers in 3D scanning metrology is described. Color camera with 3 channels limits the accuracy of device characterization. For achieving interconversion of device-independent color space and device-dependent color space, high-dimensional linear model of reflective spectrum was built. Prior training samples provide additional constraints to yield high-dimensional linear model with more than three degrees of freedom. Meanwhile, spectral power distribution of ambient light was estimated. Subsequently, markers' chromaticity in CIE color spaces was selected via maximization principle of Euclidean distance. The setting values of RGB were easily estimated via inverse transform. Finally, we implemented a typical experiment to show the performance of the proposed approach. An 24 Munsell Color Checker was used as projective screen. Color difference in the chromaticity coordinates between the active marker and the color patch was utilized to evaluate the color visibility of active markers relative to the screen. The result comparison between self-adaptive projection system and traditional diode-laser light projector was listed and discussed to highlight advantage of our proposed method.

Crosstalk of HgCdTe LWIR n-on-p diode arrays

International Nuclear Information System (INIS)

Sun Yinghui; Zhang Bo; Yu Meifang; Liao Qingjun; Zhang Yan; Wen Xin; Jiang Peilu; Hu Xiaoning; Dai Ning

2009-01-01

Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed.

Integral force feedback control with input shaping: Application to piezo-based scanning systems in ECDLs

Science.gov (United States)

Zhang, Meng; Liu, Zhigang; Zhu, Yu; Bu, Mingfan; Hong, Jun

2017-07-01

In this paper, a hybrid control system is developed by integrating the closed-loop force feedback and input shaping method to overcome the problem of the hysteresis and dynamic behavior in piezo-based scanning systems and increase the scanning speed of tunable external cavity diode lasers. The flexible hinge and piezoelectric actuators are analyzed, and a dynamic model of the scanning systems is established. A force sensor and an integral controller are utilized in integral force feedback (IFF) to directly augment the damping of the piezoelectric scanning systems. Hysteresis has been effectively eliminated, but the mechanical resonance is still evident. Noticeable residual vibration occurred after the inflection points and then gradually disappeared. For the further control of mechanical resonance, based on the theory of minimum-acceleration trajectory planning, the time-domain input shaping method was developed. The turning sections of a scanning trajectory are replaced by smooth curves, while the linear sections are retained. The IFF method is combined with the input shaping method to control the non-linearity and mechanical resonance in high-speed piezo-based scanning systems. Experiments are conducted, and the results demonstrate the effectiveness of the proposed control approach.

Integral force feedback control with input shaping: Application to piezo-based scanning systems in ECDLs.

Science.gov (United States)

Zhang, Meng; Liu, Zhigang; Zhu, Yu; Bu, Mingfan; Hong, Jun

2017-07-01

In this paper, a hybrid control system is developed by integrating the closed-loop force feedback and input shaping method to overcome the problem of the hysteresis and dynamic behavior in piezo-based scanning systems and increase the scanning speed of tunable external cavity diode lasers. The flexible hinge and piezoelectric actuators are analyzed, and a dynamic model of the scanning systems is established. A force sensor and an integral controller are utilized in integral force feedback (IFF) to directly augment the damping of the piezoelectric scanning systems. Hysteresis has been effectively eliminated, but the mechanical resonance is still evident. Noticeable residual vibration occurred after the inflection points and then gradually disappeared. For the further control of mechanical resonance, based on the theory of minimum-acceleration trajectory planning, the time-domain input shaping method was developed. The turning sections of a scanning trajectory are replaced by smooth curves, while the linear sections are retained. The IFF method is combined with the input shaping method to control the non-linearity and mechanical resonance in high-speed piezo-based scanning systems. Experiments are conducted, and the results demonstrate the effectiveness of the proposed control approach.

Peripheral dose measurements with diode and thermoluminescence dosimeters for intensity modulated radiotherapy delivered with conventional and un-conventional linear accelerator

International Nuclear Information System (INIS)

Kinhikar, Rajesh; Tambe, Chandrashekhar; Kadam, Sudarshan; Deshpande, Deepak; Gamre, Poonam; Biju, George; Suryaprakash; Magai, C.S.; Shrivastava, Shyam; Dhote, Dipak

2013-01-01

The objective of this paper was to measure the peripheral dose (PD) with diode and thermoluminescence dosimeter (TLD) for intensity modulated radiotherapy (IMRT) with linear accelerator (conventional LINAC), and tomotherapy (novel LINAC). Ten patients each were selected from Trilogy dual-energy and from Hi-Art II tomotherapy. Two diodes were kept at 20 and 25 cm from treatment field edge. TLDs (LiF:MgTi) were also kept at same distance. TLDs were also kept at 5, 10, and 15 cm from field edge. The TLDs were read with REXON reader. The readings at the respective distance were recorded for both diode and TLD. The PD was estimated by taking the ratio of measured dose at the particular distance to the prescription dose. PD was then compared with diode and TLD for LINAC and tomotherapy. Mean PD for LINAC with TLD and diode was 2.52 cGy (SD 0.69), 2.07 cGy (SD 0.88) at 20 cm, respectively, while at 25 cm, it was 1.94 cGy (SD 0.58) and 1.5 cGy (SD 0.75), respectively. Mean PD for tomotherapy with TLD and diode was 1.681 cGy (SD 0.53) and 1.58 (SD 0.44) at 20 cm, respectively. The PD was 1.24 cGy (SD 0.42) and 1.088 cGy (SD 0.35) at 25 cm, respectively, for tomotherapy. Overall, PD from tomotherapy was found lower than LINAC by the factor of 1.2-1.5 PD measurement is essential to find out the potential of secondary cancer. PD for both (conventional LINAC) and novel LINACs (tomotherapy) were measured and compared with each other. The comparison of the values for PD presented in this work and those published in the literature is difficult because of the different experimental conditions. The diode and TLD readings were reproducible and both the detector readings were comparable. (author)

Robust Comparison of the Linear Model Structures in Self-tuning Adaptive Control

DEFF Research Database (Denmark)

Zhou, Jianjun; Conrad, Finn

1989-01-01

The Generalized Predictive Controller (GPC) is extended to the systems with a generalized linear model structure which contains a number of choices of linear model structures. The Recursive Prediction Error Method (RPEM) is used to estimate the unknown parameters of the linear model structures...... to constitute a GPC self-tuner. Different linear model structures commonly used are compared and evaluated by applying them to the extended GPC self-tuner as well as to the special cases of the GPC, the GMV and MV self-tuners. The simulation results show how the choice of model structure affects the input......-output behaviour of self-tuning controllers....

Robust self-triggered MPC for constrained linear systems

NARCIS (Netherlands)

Brunner, F.D.; Heemels, W.P.M.H.; Allgöwer, F.

2014-01-01

In this paper we propose a robust self-triggered model predictive control algorithm for linear systems with additive bounded disturbances and hard constraints on the inputs and state. In self-triggered control, at every sampling instant the time until the next sampling instant is computed online

Electron injection in diodes with field emission

International Nuclear Information System (INIS)

Denavit, J.; Strobel, G.L.

1986-01-01

This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

Self-pinch focusing experiments performed on the KALIF accelerator using the Bappl diode

International Nuclear Information System (INIS)

Hoppe, P.; Nakagawa, Y.; Bauer, W.

1996-01-01

Experiments using the B appl diode with a subdivided beam drift section were performed on the KALIF accelerator with the objective to investigate the generation of net currents and their influence on the focusing properties of the extracted proton beam. The generation of net currents up to 50% of the diode current was observed for argon gas pressures below 0.1 mbar in the second drift section. The differences in the time histories of various net current monitors might be related to a radial dependency of the net current densities in the beam. A comparison of the focusing properties investigated in shots with and without current neutralization showed only small differences. No enhancement of the power density related to self-pinch effects was found. However, the possibility of beam propagation over a short vacuum distance allows the use of a backlighter target required for laser absorption spectroscopy. (author). 4 figs., 4 refs

High efficiency and broadband acoustic diodes

Science.gov (United States)

Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

2018-01-01

Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

Phase-change radiative thermal diode

OpenAIRE

Ben-Abdallah, Philippe; Biehs, Svend-Age

2013-01-01

A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important ap...

Demonstration of the self-magnetic-pinch diode as an X-ray source for flash core-punch radiography

International Nuclear Information System (INIS)

Cordova, Steve Ray; Rovang, Dean Curtis; Portillo, Salvador; Oliver, Bryan Velten; Bruner, Nichelle Lee; Ziska, Derek Raymond

2007-01-01

Minimization of the radiographic spot size and maximization of the radiation dose is a continuing long-range goal for development of electron beam driven X-ray radiography sources. In collaboration with members of the Atomic Weapons Establishment(AWE), Aldermaston UK, the Advanced Radiographic Technologies Dept. 1645 is conducting research on the development of X-ray sources for flash core-punch radiography. The Hydrodynamics Dept. at AWE has defined a near term radiographic source requirement for scaled core-punch experiments to be 250 rads(at)m with a 2.75 mm source spot-size. As part of this collaborative effort, Dept. 1645 is investigating the potential of the Self-Magnetic-Pinched (SMP) diode as a source for core-punch radiography. Recent experiments conducted on the RITS-6 accelerator [1,2] demonstrated the potential of the SMP diode by meeting and exceeding the near term radiographic requirements established by AWE. During the demonstration experiments, RITS-6 was configured with a low-impedance (40 (Omega)) Magnetically Insulated Transmission Line (MITL), which provided a 75-ns, 180-kA, 7.5-MeV forward going electrical pulse to the diode. The use of a low-impedance MITL enabled greater power coupling to the SMP diode and thus allowed for increased radiation output. In addition to reconfiguring the driver (accelerator), geometric changes to the diode were also performed which allowed for an increase in dose production without sacrificing the time integrated spot characteristics. The combination of changes to both the pulsed power driver and the diode significantly increased the source x-ray intensity

A novel diode laser system for photodynamic therapy

DEFF Research Database (Denmark)

Samsøe, E.; Andersen, P. E.; Petersen, P.

2001-01-01

In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...

Relating Linear and Volumetric Variables Through Body Scanning to Improve Human Interfaces in Space

Science.gov (United States)

Margerum, Sarah E.; Ferrer, Mike A.; Young, Karen S.; Rajulu, Sudhakar

2010-01-01

Designing space suits and vehicles for the diverse human population present unique challenges for the methods of traditional anthropometry. Space suits are bulky and allow the operator to shift position within the suit and inhibit the ability to identify body landmarks. Limited suit sizing options also cause variability in fit and performance between similarly sized individuals. Space vehicles are restrictive in volume in both the fit and the ability to collect data. NASA's Anthropometric and Biomechanics Facility (ABF) has utilized 3D scanning to shift from traditional linear anthropometry to explore and examine volumetric capabilities to provide anthropometric solutions for design. Overall, the key goals are to improve the human-system performance and develop new processes to aid in the design and evaluation of space systems. Four case studies are presented that illustrate the shift from purely linear analyses to an augmented volumetric toolset to predict and analyze the human within the space suit and vehicle. The first case study involves the calculation of maximal head volume to estimate total free volume in the helmet for proper air exchange. Traditional linear measurements resulted in an inaccurate representation of the head shape, yet limited data exists for the determination of a large head volume. Steps were first taken to identify and classify a maximum head volume and the resulting comparisons to the estimate are presented in this paper. This study illustrates the gap between linear components of anthropometry and the need for overall volume metrics in order to provide solutions. A second case study examines the overlay of the space suit scans and components onto scanned individuals to quantify fit and clearance to aid in sizing the suit to the individual. Restrictions in space suit size availability present unique challenges to optimally fit the individual within a limited sizing range while maintaining performance. Quantification of the clearance and

Thermometric Property of a Diode.

Science.gov (United States)

Inman, Fred W.; Woodruff, Dan

1995-01-01

Presents a simple way to implement the thermometric property of a semiconductor diode to produce a thermometer with a nearly linear dependence upon temperature over a wide range of temperatures. (JRH)

Multistage linear electron acceleration using pulsed transmission lines

International Nuclear Information System (INIS)

Miller, R.B.; Prestwich, K.R.; Poukey, J.W.; Epstein, B.G.; Freeman, J.R.; Sharpe, A.W.; Tucker, W.K.; Shope, S.L.

1981-01-01

A four-stage linear electron accelerator is described which uses pulsed radial transmission lines as the basic accelerating units. An annular electron beam produced by a foilless diode is guided through the accelerator by a strong axial magnetic field. Synchronous firing of the injector and the acccelerating modules is accomplished with self-breaking oil switches. The device has accelerated beam currents of 25 kA to kinetic energies of 9 MV, with 90% current transport efficiency. The average accelerating gradient is 3 MV/m

Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy

International Nuclear Information System (INIS)

Bizetto, Cesar Augusto

2013-01-01

In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer Keithley® 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens Primus® linear accelerator), 6 and 15 MV (Novalis TX®) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens Primus the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TX® the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm 2 , with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

Linear-chain assemblies of iron oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Dhak, Prasanta; Kim, Min-Kwan; Lee, Jae Hyeok; Kim, Miyoung; Kim, Sang-Koog, E-mail: sangkoog@snu.ac.kr

2017-07-01

Highlights: • Hydrothermal synthesis of pure phase 200 nm Fe{sub 3}O{sub 4} nanoparticles. • Studies of linear-chain assemblies of iron oxide nanosphere by FESEM. • Micromagnetic simulations showed the presence of 3D vortex states. • The B.E. for different numbers of particles in linear chain assemblies were calculated. - Abstract: We synthesized iron oxide nanoparticles using a simple hydrothermal approach and found several types of segments of their linear-chain self-assemblies as observed by field emission scanning electron microscopy. X-ray diffraction and transmission electron microscopy measurements confirm a well-defined single-phase FCC structure. Vibrating sample magnetometry measurements exhibit a ferromagnetic behavior. Micromagnetic numerical simulations show magnetic vortex states in the nanosphere model. Also, calculations of binding energies for different numbers of particles in the linear-chain assemblies explain a possible mechanism responsible for the self-assemblies of segments of the linear chains of nanoparticles. This work offers a step towards linear-chain self-assemblies of iron oxide nanoparticles and the effect of magnetic vortex states in individual nanoparticles on their binding energy.

Responses of diode detectors to radiation beams from teletherapy machines

International Nuclear Information System (INIS)

Malinda, Lora; Nasukha

2003-01-01

Responses of diode detectors to radiation beams from teletherapy machines. It has been carried out responses to two sets of diode detector by using the beams of teletherapy Co-60 and medical linear accelerator. Each set of consist of 8 diode detectors was irradiated by using gamma beams from teletherapy Co-60 machines and 6 MV and 10 MV foron beams from medical linear accelerator and 6.9.12.16. and 20 MeV electron beams from medical linear accelerator. The detectors were positioned on the phantom circularly and radially and electronic equilibrium condition for all type and energy beams. It was found that every detectors had own individual response and it is not to be uniformity, since the fluctuation in between 16.6 % to 30.9 %. All detectors responses are linear to gamma and foron beams, and also for energy above 6 MeV for electron beams. Nonlinearity response occurs for 6 MeV electron beam, it is probably from the assumption of electronic equilibrium

Microprocessor system to recover data from a self-scanning photodiode array

International Nuclear Information System (INIS)

Koppel, L.N.; Gadd, T.J.

1975-01-01

A microprocessor system developed at Lawrence Livermore Laboratory has expedited the recovery of data describing the low energy x-ray spectra radiated by laser-fusion targets. An Intel microprocessor controls the digitization and scanning of the data stream of an x-ray-sensitive self-scanning photodiode array incorporated in a crystal diffraction spectrometer

Analogy between optically driven injection-locked laser diodes and driven damped linear oscillators

International Nuclear Information System (INIS)

Murakami, Atsushi; Shore, K. Alan

2006-01-01

An analytical study of optically driven laser diodes (LDs) has been undertaken to meet the requirement for a theoretical treatment for chaotic drive and synchronization occurring in the injection-locked LDs with strong injection. A small-signal analysis is performed for the sets of rate equations for the injection-locked LDs driven by a sinusoidal optical signal. In particular, as a model of chaotic driving signals from LD dynamics, an optical signal caused by direct modulation to the master LD is assumed, oscillating both in field amplitude and phase as is the case with chaotic driving signals. Consequently, we find conditions that allow reduction in the degrees of freedom of the driven LD. Under these conditions, the driven response is approximated to a simple form which is found to be equivalent to driven damped linear oscillators. The validity of the application of this theory to previous work on the synchronization of chaos and related phenomena occurring in the injection-locked LDs is demonstrated

Study on time-varying velocity measurement with self-mixing laser diode based on Discrete Chirp-Fourier Transform

International Nuclear Information System (INIS)

Zhang Zhaoyun; Gao Yang; Zhao Xinghai; Zhao Xiang

2011-01-01

Laser's optical output power and frequency are modulated when the optical beam is back-scattered into the active cavity of the laser. By signal processing, the Doppler frequency can be acquired, and the target's velocity can be calculated. Based on these properties, an interferometry velocity sensor can be designed. When target move in time-varying velocity mode, it is difficult to extract the target's velocity. Time-varying velocity measurement by self-mixing laser diode is explored. A mathematics model was proposed for the time-varying velocity (invariable acceleration) measurement by self-mixing laser diode. Based on this model, a Discrete Chirp-Fourier Transform (DCFT) method was applied, DCFT is analogous to DFT. We show that when the signal length N is prime, the magnitudes of all the side lobes are 1, whereas the magnitudes of the main lobe is √N, And the coordinates of the main lobe shows the target's velocity and acceleration information. The simulation results prove the validity of the algorithm even in the situation of low SNR when N is prime.

Study on the near-field non-linearity (SMILE) of high power diode laser arrays

Science.gov (United States)

Zhang, Hongyou; Jia, Yangtao; Li, Changxuan; Zah, Chung-en; Liu, Xingsheng

2018-02-01

High power laser diodes have been found a wide range of industrial, space, medical applications, characterized by high conversion efficiency, small size, light weight and a long lifetime. However, due to thermal induced stress, each emitter in a semiconductor laser bar or array is displaced along p-n junction, resulting of each emitter is not in a line, called Near-field Non-linearity. Near-field Non-linearity along laser bar (also known as "SMILE") determines the outcome of optical coupling and beam shaping [1]. The SMILE of a laser array is the main obstacle to obtain good optical coupling efficiency and beam shaping from a laser array. Larger SMILE value causes a larger divergence angle and a wider line after collimation and focusing, respectively. In this letter, we simulate two different package structures based on MCC (Micro Channel Cooler) with Indium and AuSn solders, including the distribution of normal stress and the SMILE value. According to the theoretical results, we found the distribution of normal stress on laser bar shows the largest in the middle and drops rapidly near both ends. At last, we did another experiment to prove that the SMILE value of a laser bar was mainly affected by the die bonding process, rather than the operating condition.

Particle linear theory on a self-gravitating perturbed cubic Bravais lattice

International Nuclear Information System (INIS)

Marcos, B.

2008-01-01

Discreteness effects are a source of uncontrolled systematic errors of N-body simulations, which are used to compute the evolution of a self-gravitating fluid. We have already developed the so-called ''particle linear theory''(PLT), which describes the evolution of the position of self-gravitating particles located on a perturbed simple cubic lattice. It is the discrete analogue of the well-known (Lagrangian) linear theory of a self-gravitating fluid. Comparing both theories permits us to quantify precisely discreteness effects in the linear regime. It is useful to develop the PLT also for other perturbed lattices because they represent different discretizations of the same continuous system. In this paper we detail how to implement the PLT for perturbed cubic Bravais lattices (simple, body, and face-centered) in a cubic simulation box. As an application, we will study the discreteness effects--in the linear regime--of N-body simulations for which initial conditions have been set up using these different lattices.

Molecular diodes in optical rectennas

Science.gov (United States)

Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

2016-09-01

The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

Application of a diode-array detector in capillary electrophoresis

NARCIS (Netherlands)

Beck, W.; Hoek, van R.; Engelhardt, H.

1993-01-01

In the last decade diode-array detection has proved to be extremely useful in high performance liquid chromatography in recording UV-visible spectra directly and on-line in the column effluent. In capillary electrophoresis (CE) only fast-scanning detectors with long scan times (up to 2 s) are

Analysis of calibration-free wavelength-scanned wavelength modulation spectroscopy for practical gas sensing using tunable diode lasers

Science.gov (United States)

Sun, K.; Chao, X.; Sur, R.; Goldenstein, C. S.; Jeffries, J. B.; Hanson, R. K.

2013-12-01

A novel strategy has been developed for analysis of wavelength-scanned, wavelength modulation spectroscopy (WMS) with tunable diode lasers (TDLs). The method simulates WMS signals to compare with measurements to determine gas properties (e.g., temperature, pressure and concentration of the absorbing species). Injection-current-tuned TDLs have simultaneous wavelength and intensity variation, which severely complicates the Fourier expansion of the simulated WMS signal into harmonics of the modulation frequency (fm). The new method differs from previous WMS analysis strategies in two significant ways: (1) the measured laser intensity is used to simulate the transmitted laser intensity and (2) digital lock-in and low-pass filter software is used to expand both simulated and measured transmitted laser intensities into harmonics of the modulation frequency, WMS-nfm (n = 1, 2, 3,…), avoiding the need for an analytic model of intensity modulation or Fourier expansion of the simulated WMS harmonics. This analysis scheme is valid at any optical depth, modulation index, and at all values of scanned-laser wavelength. The method is demonstrated and validated with WMS of H2O dilute in air (1 atm, 296 K, near 1392 nm). WMS-nfm harmonics for n = 1 to 6 are extracted and the simulation and measurements are found in good agreement for the entire WMS lineshape. The use of 1f-normalization strategies to realize calibration-free wavelength-scanned WMS is also discussed.

High-power non linear frequency converted laser diodes

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Andersen, Peter E.; Hansen, Anders Kragh

2015-01-01

We present different methods of generating light in the blue-green spectral range by nonlinear frequency conversion of tapered diode lasers achieving state-of-the-art power levels. In the blue spectral range, we show results using single-pass second harmonic generation (SHG) as well as cavity enh...... enhanced sum frequency generation (SFG) with watt-level output powers. SHG and SFG are also demonstrated in the green spectral range as a viable method to generate up to 4 W output power with high efficiency using different configurations....

Active stabilization of a diode laser injection lock.

Science.gov (United States)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-06-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Free space broad-bandwidth tunable laser diode based on Littman configuration for 3D profile measurement

Science.gov (United States)

Shirazi, Muhammad Faizan; Kim, Pilun; Jeon, Mansik; Kim, Chang-Seok; Kim, Jeehyun

2018-05-01

We developed a tunable laser diode for an optical coherence tomography system that can perform three-dimensional profile measurement using an area scanning technique. The tunable laser diode is designed using an Eagleyard tunable laser diode with a galvano filter. The Littman free space configuration is used to demonstrate laser operation. The line- and bandwidths of this source are 0.27 nm (∼110 GHz) and 43 nm, respectively, at the center wavelength of 860 nm. The output power is 20 mW at an operating current of 150 mA. A step height target is imaged using a wide-area scanning system to show the measurement accuracy of the proposed tunable laser diode. A TEM grid is also imaged to measure the topography and thickness of the sample by proposed tunable laser diode.

Electron dosimetry in irradiation processing with rad-hard diodes; Dosimetria de eletrons em processos de irradiacao com diodos resistentes a danos de radiacao

Energy Technology Data Exchange (ETDEWEB)

Santos, Thais Cavalheri dos

2012-07-01

This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar Registered-Sign window and LEMO Registered-Sign connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for

Accuracy and reliability of linear cephalometric measurements from cone-beam computed tomography scans of a dry human skull.

Science.gov (United States)

Berco, Mauricio; Rigali, Paul H; Miner, R Matthew; DeLuca, Stephelynn; Anderson, Nina K; Will, Leslie A

2009-07-01

The purpose of this study was to determine the accuracy and reliability of 3-dimensional craniofacial measurements obtained from cone-beam computed tomography (CBCT) scans of a dry human skull. Seventeen landmarks were identified on the skull. CBCT scans were then obtained, with 2 skull orientations during scanning. Twenty-nine interlandmark linear measurements were made directly on the skull and compared with the same measurements made on the CBCT scans. All measurements were made by 2 operators on 4 separate occasions. The method errors were 0.19, 0.21, and 0.19 mm in the x-, y- and z-axes, respectively. Repeated measures analysis of variance (ANOVA) showed no significant intraoperator or interoperator differences. The mean measurement error was -0.01 mm (SD, 0.129 mm). Five measurement errors were found to be statistically significantly different; however, all measurement errors were below the known voxel size and clinically insignificant. No differences were found in the measurements from the 2 CBCT scan orientations of the skull. CBCT allows for clinically accurate and reliable 3-dimensional linear measurements of the craniofacial complex. Moreover, skull orientation during CBCT scanning does not affect the accuracy or the reliability of these measurements.

Non-Linear Optical Studies On Sol-Gel Derived Lead Chloride Crystals Using Z-Scan Technique

OpenAIRE

Rejeena, I; Lillibai, B; Toms, Roseleena; Nampoori, VP N; Radhakrishnan, P

2014-01-01

In this paper we report the preparation, optical characterization and non linear optical behavior of pure lead chloride crystals. Lead chloride samples subjected to UV and IR irradiation and electric and magnetic fields have also been investigated Optical nonlinearity in these lead chloride samples were determined using single beam and high sensitive Z-scan technique. Non linear optical studies of these materials in single distilled water show reverse saturable absorption which makes th...

Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose

Science.gov (United States)

Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

2016-06-01

Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future “internet of things” viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm2, a current rectification ratio up to 4 × 103 between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

Self-mode-locking operation of a diode-end-pumped Tm:YAP laser with watt-level output power

Science.gov (United States)

Zhang, Su; Zhang, Xinlu; Huang, Jinjer; Wang, Tianhan; Dai, Junfeng; Dong, Guangzong

2018-03-01

We report on a high power continuous wave (CW) self-mode-locked Tm:YAP laser pumped by a 792 nm laser diode. Without any additional mode-locking elements in the cavity, stable and self-starting mode-locking operation has been realized. The threshold pump power of the CW self-mode-locked Tm:YAP laser is only 5.4 W. The maximum average output power is as high as 1.65 W at the pump power of 12 W, with the repetition frequency of 468 MHz and the center wavelength of 1943 nm. To the best of our knowledge, this is the first CW self-mode-locked Tm:YAP laser. The experiment results show that the Tm:YAP crystal is a promising gain medium for realizing the high power self-mode-locking operation at 2 µm.

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

International Nuclear Information System (INIS)

Winterfeldt, M.; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G.

2014-01-01

GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPP lat ) at high power. An experimental study of the factors limiting BPP lat is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPP lat is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPP lat , whose influence on total BPP lat remains small, provided the overall polarization purity is >95%

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

Science.gov (United States)

Winterfeldt, M.; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G.

2014-08-01

GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPPlat) at high power. An experimental study of the factors limiting BPPlat is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPPlat is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPPlat, whose influence on total BPPlat remains small, provided the overall polarization purity is >95%.

Self-pinch focusing experiments performed on the KALIF accelerator using the B{sub appl} diode

Energy Technology Data Exchange (ETDEWEB)

Hoppe, P; Nakagawa, Y; Bauer, W [Forschungszentrum Karlsruhe (Germany); and others

1997-12-31

Experiments using the B{sub appl} diode with a subdivided beam drift section were performed on the KALIF accelerator with the objective to investigate the generation of net currents and their influence on the focusing properties of the extracted proton beam. The generation of net currents up to 50% of the diode current was observed for argon gas pressures below 0.1 mbar in the second drift section. The differences in the time histories of various net current monitors might be related to a radial dependency of the net current densities in the beam. A comparison of the focusing properties investigated in shots with and without current neutralization showed only small differences. No enhancement of the power density related to self-pinch effects was found. However, the possibility of beam propagation over a short vacuum distance allows the use of a backlighter target required for laser absorption spectroscopy. (author). 4 figs., 4 refs.

Scanning differential polarization microscope: Its use to image linear and circular differential scattering

International Nuclear Information System (INIS)

Mickols, W.; Maestre, M.F.

1988-01-01

A differential polarization microscope that couples the sensitivity of single-beam measurement of circular dichroism and circular differential scattering with the simultaneous measurement of linear dichroism and linear differential scattering has been developed. The microscope uses a scanning microscope stage and single-point illumination to give the very shallow depth of field found in confocal microscopy. This microscope can operate in the confocal mode as well as in the near confocal condition that can allow one to program the coherence and spatial resolution of the microscope. This microscope has been used to study the change in the structure of chromatin during the development of sperm in Drosophila

PIC simulations of conical magnetically insulated transmission line with LTD generator: Transition from self-limited to load-limited flow

Science.gov (United States)

Liu, Laqun; Wang, Huihui; Guo, Fan; Zou, Wenkang; Liu, Dagang

2017-04-01

Based on the 3-dimensional Particle-In-Cell (PIC) code CHIPIC3D, with a new circuit boundary algorithm we developed, a conical magnetically insulated transmission line (MITL) with a 1.0-MV linear transformer driver (LTD) is explored numerically. The values of switch jitter time of LTD are critical parameters for the system, which are difficult to be measured experimentally. In this paper, these values are obtained by comparing the PIC results with experimental data of large diode-gap MITL. By decreasing the diode gap, we find that all PIC results agree well with experimental data only if MITL works on self-limited flow no matter how large the diode gap is. However, when the diode gap decreases to a threshold, the self-limited flow would transfer to a load-limited flow. In this situation, PIC results no longer agree with experimental data anymore due to the anode plasma expansion in the diode load. This disagreement is used to estimate the plasma expansion speed.

Active Stabilization of a Diode Laser Injection Lock

OpenAIRE

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-01-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

CERN Document Server

Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

A Fiber-Coupled Self-Mixing Laser Diode for the Measurement of Young’s Modulus

Directory of Open Access Journals (Sweden)

Ke Lin

2016-06-01

Full Text Available This paper presents the design of a fiber-coupled self-mixing laser diode (SMLD for non-contact and non-destructive measurement of Young’s modulus. By the presented measuring system, the Young’s modulus of aluminum 6061 and brass are measured as 70.0 GPa and 116.7 GPa, respectively, showing a good agreement within the standards in the literature and yielding a much smaller deviation and a higher repeatability compared with traditional tensile testing. Its fiber-coupled characteristics make the system quite easy to be installed in many application cases.

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

International Nuclear Information System (INIS)

Morgado, Jorge; Barbagallo, Nunzio; Charas, Ana; Matos, Manuel; Alcacer, Luis; Cacialli, Franco

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide

A case of linear nevus sebaceous syndrome showing abnormalities by head CT scan

International Nuclear Information System (INIS)

Matsuda, Yoshio; Kuraya, Kazue; Sumiyoshi, Minoru; Seki, Shuichiro; Murakami, Naoki

1982-01-01

A female baby weighing 2,702 g, who was delivered spontaneously after 37 weeks of gestation, showed linear nevus sebaceous syndrome with abnormalities on EEG and head CT scan. Immediately after birth, the baby showed abnormalities of the skin in the left half of the body, especially from the head to the face. At the same time, EEG showed a low voltage on the affected side, and head CT scan showed expansion of the lateral ventricle. Funduscopic findings showed retinochoroidal toxoplasmosis-like degeneration. This disease has been rarely reported. An early diagnosis is seemed to be important since the skin lesion per se was premalignant, and generalized abnormalities including those of the central nervous system occurred concurrently. (Chiba, N.)

Design and experimental research on a self-magnetic pinch diode under MV

Science.gov (United States)

Pengfei, ZHANG; Yang, HU; Jiang, SUN; Yan, SONG; Jianfeng, SUN; Zhiming, YAO; Peitian, CONG; Mengtong, QIU; Aici, QIU

2018-01-01

A self-magnetic pinch diode (SMPD) integrating an anode foil-reinforced electron beam pinch focus and a small high-dose x-ray spot output was designed and optimized. An x-ray focal spot measuring system was developed in accordance with the principle of pinhole imaging. The designed SMPD and the corresponding measuring system were tested under ∼MV, with 1.75 × 2 mm2 oval x-ray spots (AWE defined) and forward directed dose 1.6 rad at 1 m. Results confirmed that the anode foil can significantly strengthen the electron beam pinch focus, and the focal spot measuring system can collect clear focal spot images. This finding indicated that the principle and method are feasible.

Design and experimental research on a self-magnetic pinch diode under MV

Institute of Scientific and Technical Information of China (English)

Pengfei ZHANG; Yang HU; Jiang SUN; Yan SONG; Jianfeng SUN; Zhiming YAO; Peitian CONG; Mengtong QIU; Aici QIU

2018-01-01

A self-magnetic pinch diode (SMPD) integrating an anode foil-reinforced electron beam pinch focus and a small high-dose x-ray spot output was designed and optimized.An x-ray focal spot measuring system was developed in accordance with the principle of pinhole imaging.The designed SMPD and the corresponding measuring system were tested under ～MV,with 1.75 × 2 mm2 oval x-ray spots (AWE defined) and forward directed dose 1.6 rad at 1 m.Results confirmed that the anode foil can significantly strengthen the electron beam pinch focus,and the focal spot measuring system can collect clear focal spot images.This finding indicated that the principle and method are feasible.

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

Science.gov (United States)

Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

2017-01-01

In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

Active stabilization of a diode laser injection lock

Energy Technology Data Exchange (ETDEWEB)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep [Department of Physics, University of Washington, P.O. Box 351560, Seattle, Washington 98195-1560 (United States)

2016-06-15

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Active stabilization of a diode laser injection lock

International Nuclear Information System (INIS)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-01-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Development of a semiconductor neutron dosimeter with a PIN diode

International Nuclear Information System (INIS)

Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck

2004-01-01

When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)

Self-assembled patches in PtSi/n-Si (111) diodes

Science.gov (United States)

Afandiyeva, I. M.; Altιndal, Ş.; Abdullayeva, L. K.; Bayramova, A. İ.

2018-05-01

Using the effect of the temperature on the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent doping concentration (N Dapp), the potential difference between the Fermi energy level and the bottom of the conduction band (V n), apparent barrier height (Φ Bapp), series resistance (R s) and the interface state density N ss have been investigated. From the temperature dependence of (C–V) it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K. The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells, which formed due to the process of PtSi formation on semiconductor and the presence of hexagonal voids of Si (111).

Microprocessor-controlled scanning densitometer system

International Nuclear Information System (INIS)

Shurtliff, R.W.

1980-04-01

An Automated Scanning Densitometer System has been developed by uniting a microprocessor with a low energy x-ray densitometer system. The microprocessor controls the detector movement, provides self-calibration, compensates raw readings to provide time-linear output, controls both data storage and the host computer interface, and provides measurement output in engineering units for immediate reading. The densitometer, when used in a scanning mode, is a precision reference instrument that provides chordal average density measurements over the cross section of a pipe under steady-state flow conditions. Results have shown an improvement over the original densitometer in reliability and repeatability of the system, an a factor-of-five improvement in accuracy

Use of epitaxial silicon diodes in photon dosimetry

International Nuclear Information System (INIS)

Pereira, Lilian Nunes

2013-01-01

In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200kGy from 60 Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratorio de Calibracao de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at lm from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 10 4 higher than the lowest photocurrents measured. The directional response of both

Scanning Electron Microscope Calibration Using a Multi-Image Non-Linear Minimization Process

Science.gov (United States)

Cui, Le; Marchand, Éric

2015-04-01

A scanning electron microscope (SEM) calibrating approach based on non-linear minimization procedure is presented in this article. A part of this article has been published in IEEE International Conference on Robotics and Automation (ICRA), 2014. . Both the intrinsic parameters and the extrinsic parameters estimations are achieved simultaneously by minimizing the registration error. The proposed approach considers multi-images of a multi-scale calibration pattern view from different positions and orientations. Since the projection geometry of the scanning electron microscope is different from that of a classical optical sensor, the perspective projection model and the parallel projection model are considered and compared with distortion models. Experiments are realized by varying the position and the orientation of a multi-scale chessboard calibration pattern from 300× to 10,000×. The experimental results show the efficiency and the accuracy of this approach.

Diode laser spectroscopy of oxygen electronic band at 760 nm

International Nuclear Information System (INIS)

Lucchesini, A.; De Rosa, M.; Gozzini, S.

1998-01-01

Collisional broadening and shift coefficients have been obtained by analyzing the line shapes of oxygen absorptions in the 760 nm electronic band. By using a diode laser spectrometer with commercially available etherostructure Al x Ga 1-x As diode lasers operating in 'free-running mode', line shape parameters have been collected at room temperature by varying the gas pressure. A systematic study has been carried on seven absorption lines by scanning the diode laser emission wavelength around the gas resonances. The weak absorption lines have been detected by using the wavelength modulation (WM) spectroscopy technique with second-harmonic detection

Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

DEFF Research Database (Denmark)

Liu, Junqiu; Brasch, Victor; Pfeiffer, Martin H. P.

2016-01-01

Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method using cascaded frequency agile diode lasers......, which allows us to extend the measurement bandwidth to 37.4 THz (1355-1630 nm) at megahertz resolution with scanning speeds above 1 THz/s. It is demonstrated as a useful tool to characterize a broadband spectrum for molecular spectroscopy, and in particular it enables us to characterize the dispersion...

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

Energy Technology Data Exchange (ETDEWEB)

Winterfeldt, M., E-mail: martin.winterfeldt@fbh-berlin.de; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2014-08-14

GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPP{sub lat}) at high power. An experimental study of the factors limiting BPP{sub lat} is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPP{sub lat} is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPP{sub lat}, whose influence on total BPP{sub lat} remains small, provided the overall polarization purity is >95%.

Amorphous structure evolution of high power diode laser cladded Fe–Co–B–Si–Nb coatings

International Nuclear Information System (INIS)

Zhu Yanyan; Li Zhuguo; Huang Jian; Li Min; Li Ruifeng; Wu Yixiong

2012-01-01

Highlights: ► Fabricated amorphous composited coating by high power diode laser cladding with single track. ► Lower dilution and higher scanning speed are desired to obtain higher amorphous phase fraction. ► White spots phase with high content of Nb embedded in the amorphous matrix. - Abstract: Fe–Co–B–Si–Nb coatings were fabricated on the surface of low carbon steel using high power diode laser cladding of [(Fe 0.5 Co 0.5 ) 0.75 B 0.2 Si 0.05 ] 95.7 Nb 4.3 amorphous powders at three different scanning speeds of 6, 17 and 50 m/s. At each scanning speed, laser power was optimized to obtain low dilution ratio. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy with energy dispersive spectrometer and electron probe micro analysis were carried out to characterize the microstructure and chemical composition of the cladded coatings. Differential scanning calorimetry was also carried out to investigate the fraction of the amorphous phase. The results showed that dilution ratio and scanning speed were the two main factors for fabricating Fe–Co–B–Si–Nb amorphous coating by high power diode laser cladding. Low dilution ratio was crucial for the formation of amorphous phase. When the dilution ratio was low, the fraction of amorphous phase in the cladded coatings increased upon increasing the scanning speed.

A Fourier Transform Spectrometer Based on an Electrothermal MEMS Mirror with Improved Linear Scan Range

Directory of Open Access Journals (Sweden)

Wei Wang

2016-09-01

Full Text Available A Fourier transform spectrometer (FTS that incorporates a closed-loop controlled, electrothermally actuated microelectromechanical systems (MEMS micromirror is proposed and experimentally verified. The scan range and the tilting angle of the mirror plate are the two critical parameters for MEMS-based FTS. In this work, the MEMS mirror with a footprint of 4.3 mm × 3.1 mm is based on a modified lateral-shift-free (LSF bimorph actuator design with large piston and reduced tilting. Combined with a position-sensitive device (PSD for tilt angle sensing, the feedback controlled MEMS mirror generates a 430 µm stable linear piston scan with the mirror plate tilting angle less than ±0.002°. The usable piston scan range is increased to 78% of the MEMS mirror’s full scan capability, and a spectral resolution of 0.55 nm at 531.9 nm wavelength, has been achieved. It is a significant improvement compared to the prior work.

Use of a radial self-field diode geometry for intense pulsed ion beam generation at 6 MeV on Hermes III

Energy Technology Data Exchange (ETDEWEB)

Renk, T. J., E-mail: tjrenk@sandia.gov; Harper-Slaboszewicz, V.; Mikkelson, K. A.; Ginn, W. C. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Ottinger, P. F. [ENGILITY, Chantilly, Virginia 20151 (United States); Schumer, J. W. [Plasma Physics Division, Naval Research Laboratory, Washington, DC 20375 (United States)

2014-12-15

We investigate the generation of intense pulsed focused ion beams at the 6 MeV level using an inductive voltage adder (IVA) pulsed-power generator, which employs a magnetically insulated transmission line (MITL). Such IVA machines typical run at an impedance of few tens of Ohms. Previous successful intense ion beam generation experiments have often featured an “axial” pinch-reflex ion diode (i.e., with an axial anode-cathode gap) and operated on a conventional Marx generator/water line driver with an impedance of a few Ohms and no need for an MITL. The goals of these experiments are to develop a pinch-reflex ion diode geometry that has an impedance to efficiently match to an IVA, produces a reasonably high ion current fraction, captures the vacuum electron current flowing forward in the MITL, and focuses the resulting ion beam to small spot size. A new “radial” pinch-reflex ion diode (i.e., with a radial anode-cathode gap) is found to best demonstrate these properties. Operation in both positive and negative polarities was undertaken, although the negative polarity experiments are emphasized. Particle-in-cell (PIC) simulations are consistent with experimental results indicating that, for diode impedances less than the self-limited impedance of the MITL, almost all of the forward-going IVA vacuum electron flow current is incorporated into the diode current. PIC results also provide understanding of the diode-impedance and ion-focusing properties of the diode. In addition, a substantial high-energy ion population is also identified propagating in the “reverse” direction, i.e., from the back side of the anode foil in the electron beam dump.

The Pierce diode with an external circuit: II, Non-uniform equilibria

International Nuclear Information System (INIS)

Lawson, W.S.

1987-01-01

The non-uniform (non-linear) equilibria of the classical (short circuit) Pierce diode and the extended (series RLC external circuit) Pierce diode are described theoretically, and explored via computer simulation. It is found that most equilibria are correctly predicted by theory, but that the continuous set of equilibria of the classical Pierce diode at α = 2π are not observed. The stability characteristics of the non-uniform equilibria are also worked out, and are consistent with the simulations. 8 refs., 22 figs., 3 tabs

Dosimetric validation of new semiconductor diode dosimetry system for intensity modulated radiotherapy

Directory of Open Access Journals (Sweden)

Rajesh Kinhikar

2012-01-01

Full Text Available Introduction: The new diode Isorad was validated for intensity modulated radiotherapy (IMRT and the observations during the validation are reported. Materials and Methods: The validation includes intrinsic precision, post-irradiation stability, dose linearity, dose-rate effect, angular response, source to surface (SSD dependence, field size dependence, and dose calibration. Results: The intrinsic precision of the diode was more than 1% (1 σ. The linearity found in the whole range of dose analyzed was 1.93% (R 2 = 1. The minimum and maximum variation in the measured and calculated dose were found to be 0.78% (with 25 MU at ioscentre and 4.8% (with 1000 MU at isocentre, respectively. The maximal variation in angular response with respect to arbitrary angle 0° found was 1.31%. The diode exhibited a 51.7% and 35% decrease in the response in the 35 cm and 20 cm SSD range, respectively. The minimum and the maximum variation in the measured dose from the diode and calculated dose were 0.82% (5 cm × 5 cm and 3.75% (30 cm × 30 cm, respectively. At couch 270°, the response of the diode was found to vary maximum by 1.4% with ΁ 60 gantry angle. Mean variation between measured dose with diode and planned dose by TPS was found to be 1.3% (SD 0.75 for IMRT patient-specific quality assurance. Conclusion: For the evaluation of IMRT, use of cylindrical diode is strongly recommended.

Estimation of power dissipation of a 4H-SiC Schottky barrier diode with a linearly graded doping profile in the drift region

Directory of Open Access Journals (Sweden)

Rajneesh Talwar

2009-09-01

Full Text Available The aim of this paper is to establish the importance of a linearly graded profile in the drift region of a 4H-SiC Schottky barrier diode (SBD. The power dissipation of the device is found to be considerably lower at any given current density as compared to its value obtained for a uniformly doped drift region. The corresponding values of breakdown voltages obtained are similar to those obtained with uniformly doped wafers of 4H-SiC.

Extraction of depth-dependent perturbation factors for silicon diodes using a plastic scintillation detector.

Science.gov (United States)

Lacroix, Frederic; Guillot, Mathieu; McEwen, Malcolm; Gingras, Luc; Beaulieu, Luc

2011-10-01

This work presents the experimental extraction of the perturbation factor in megavoltage electron beams for three models of silicon diodes (IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded) using a plastic scintillation detector (PSD). The authors used a single scanning PSD mounted on a high-precision scanning tank to measure depth-dose curves in 6-, 12-, and 18-MeV clinical electron beams. They also measured depth-dose curves using the IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded diodes. The authors used the depth-dose curves measured with the PSD as a perturbation-free reference to extract the perturbation factors of the diodes. The authors found that the perturbation factors for the diodes increased substantially with depth, especially for low-energy electron beams. The experimental results show the same trend as published Monte Carlo simulation results for the EFD diode; however, the perturbations measured experimentally were greater. They found that using an effective point of measurement (EPOM) placed slightly away from the source reduced the variation of perturbation factors with depth and that the optimal EPOM appears to be energy dependent. The manufacturer recommended EPOM appears to be incorrect at low electron energy (6 MeV). In addition, the perturbation factors for diodes may be greater than predicted by Monte Carlo simulations.

Extraction of depth-dependent perturbation factors for silicon diodes using a plastic scintillation detector

International Nuclear Information System (INIS)

Lacroix, Frederic; Guillot, Mathieu; McEwen, Malcolm; Gingras, Luc; Beaulieu, Luc

2011-01-01

Purpose: This work presents the experimental extraction of the perturbation factor in megavoltage electron beams for three models of silicon diodes (IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded) using a plastic scintillation detector (PSD). Methods: The authors used a single scanning PSD mounted on a high-precision scanning tank to measure depth-dose curves in 6-, 12-, and 18-MeV clinical electron beams. They also measured depth-dose curves using the IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded diodes. The authors used the depth-dose curves measured with the PSD as a perturbation-free reference to extract the perturbation factors of the diodes. Results: The authors found that the perturbation factors for the diodes increased substantially with depth, especially for low-energy electron beams. The experimental results show the same trend as published Monte Carlo simulation results for the EFD diode; however, the perturbations measured experimentally were greater. They found that using an effective point of measurement (EPOM) placed slightly away from the source reduced the variation of perturbation factors with depth and that the optimal EPOM appears to be energy dependent. Conclusions: The manufacturer recommended EPOM appears to be incorrect at low electron energy (6 MeV). In addition, the perturbation factors for diodes may be greater than predicted by Monte Carlo simulations.

Numerical simulation on the energy spectrum of the electron beam generated by low-impedance diode and the influence of external magnetic field on diode impedance

International Nuclear Information System (INIS)

Liu Guozhi

2003-01-01

The energy spectrum of the electron beam generated by low-impedance diode and the influence of external magnetic field on the impedance of diode are studied numerically in this paper. The results show that the beam generated by the diode has an energy spread, even with constant applied voltage. Additionally, external magnetic field has great but reverse influence on the impedance of low-impedance diode, which is, according to the author's analysis, the result of the change of the electron's track due to external magnetic field. If the beam current is less than the critical one for self-pinch, the impedance will be constant with the variation of external magnetic field

Huffman and linear scanning methods with statistical language models.

Science.gov (United States)

Roark, Brian; Fried-Oken, Melanie; Gibbons, Chris

2015-03-01

Current scanning access methods for text generation in AAC devices are limited to relatively few options, most notably row/column variations within a matrix. We present Huffman scanning, a new method for applying statistical language models to binary-switch, static-grid typing AAC interfaces, and compare it to other scanning options under a variety of conditions. We present results for 16 adults without disabilities and one 36-year-old man with locked-in syndrome who presents with complex communication needs and uses AAC scanning devices for writing. Huffman scanning with a statistical language model yielded significant typing speedups for the 16 participants without disabilities versus any of the other methods tested, including two row/column scanning methods. A similar pattern of results was found with the individual with locked-in syndrome. Interestingly, faster typing speeds were obtained with Huffman scanning using a more leisurely scan rate than relatively fast individually calibrated scan rates. Overall, the results reported here demonstrate great promise for the usability of Huffman scanning as a faster alternative to row/column scanning.

A new linear induction voltage adder approach to radiography

International Nuclear Information System (INIS)

Mazarakis, M.G.; Poukey, J.W.; Frost, C.A.; Johnson, D.L.; Shope, S.L.; Halbleib, J.A.; Prestwich, K.R.; Turman, B.N.; Smith, I.

1992-01-01

At present, two types of accelerators are being utilized for x-ray radiography: first a linear RF or induction accelerator with multiple accelerating gaps and beam vacuum magnetic transport systems; and second, single gap pulse-power devices with a high voltage Blumlein pulse forming line. The authors present a conceptual design of a new type of linear induction accelerator that can bridge the gap between the two devices. It can produce 30--50-kA electron currents small diameter (∼ 1 mm) and high energy (12--20-MV) beams. There is no beam drifting through the device. The voltage addition of the accelerating gaps occurs at the central self-magnetically insulated cathode electrode. The electron beam is created at the high voltage end in a single gap diode. A magnetically-immersed foilless diode can produce high quality 0.5 mm radius 30--50 kA beams. A short 100--200-kG small bore solenoidal coil is required to maintain the beam radius during transport from the cathode tips to the x-ray converter target, 50--70 cm downstream. The idea of very high impedance MITL voltage adder accelerators was first tested with RADLAC II/SMILE experiments where 12--14-MV, 50-kA 1 cm radius beams were produced with 2--3 mm annulus thickness. A 12.5 m eight-stage voltage adder was utilized, coupled to a 20 kG magnetically immersed foilless diode. In addition the magnetically-immersed foilless diodes with very thin (mm diameter) cathode tips were investigated in experiments with the IBEX accelerator. As an example of this new accelerator technology the authors present the following point design for a 16-MV, 50-kA accelerator producing 1-mm diameter electron beams. The design is based on a cavity fed MITL voltage adder which performs the series addition of the voltage pulses from 16 identical inductively-isolated cavity feed systems. Each cavity is a structure that is driven by one 14 ohm pulse-forming line, providing a 1 MV voltage pulse to the accelerating gap

Ion diode diagnostics to resolve beam quality issues

Energy Technology Data Exchange (ETDEWEB)

Bluhm, H; Buth, L; Hoppe, P [Forschungszentrum Karlsruhe (Germany). Institut fuer Neutronenphysik und Reaktortechnik; and others

1997-12-31

Various diagnostic methods and instruments are under development at the Forschungszentrum Karlsruhe to measure important physical quantities in the accelerating gap of high power diodes on KALIF with a high spatial and temporal resolution. The methods include optical spectroscopy, refractive index measurements, dispersion interferometry, and high resolution energy analysis. The setup of these diagnostic tools and the first results obtained for applied and self-magnetically insulated diodes are presented. (author). 6 figs., 5 refs.

High voltage high brightness electron accelerators with MITL voltage adder coupled to foilless diodes

International Nuclear Information System (INIS)

Mazarakis, M.G.; Poukey, J.W.; Frost, C.A.; Shope, S.L.; Halbleib, J.A.; Turman, B.N.

1993-01-01

During the last ten years the authors have extensively studied the physics and operation of magnetically-immersed electron foilless diodes. Most of these sources were utilized as injectors to high current, high energy linear induction accelerators such as those of the RADLAC family. Recently they have experimentally and theoretically demonstrated that foilless diodes can be successfully coupled to self-magnetically insulated transmission line voltage adders to produce very small high brightness, high definition (no halo) electron beams. The RADLAC/SMILE experience opened the path to a new approach in high brightness, high energy induction accelerators. There is no beam drifting through the device. The voltage addition occurs in a center conductor, and the beam is created at the high voltage end in an applied magnetic field diode. This work was motivated by the remarkable success of the HERMES-III accelerator and the need to produce small radius, high energy, high current electron beams for air propagation studies and flash x-ray radiography. In this paper they present experimental results compared with analytical and numerical simulations in addition to design examples of devices that can produce multikiloamp electron beams of as high as 100 MV energies and radii as small as 1 mm

Radiation monitoring with CVD diamonds and PIN diodes at BaBar

Energy Technology Data Exchange (ETDEWEB)

Bruinsma, M. [University of California Irvine, Irvine, CA 92697 (United States); Burchat, P. [Stanford University, Stanford, CA 94305-4060 (United States); Curry, S. [University of California Irvine, Irvine, CA 92697 (United States)], E-mail: scurry@slac.stanford.edu; Edwards, A.J. [Stanford University, Stanford, CA 94305-4060 (United States); Kagan, H.; Kass, R. [Ohio State University, Columbus, OH 43210 (United States); Kirkby, D. [University of California Irvine, Irvine, CA 92697 (United States); Majewski, S.; Petersen, B.A. [Stanford University, Stanford, CA 94305-4060 (United States)

2007-12-11

The BaBar experiment at the Stanford Linear Accelerator Center has been using two polycrystalline chemical vapor deposition (pCVD) diamonds and 12 silicon PIN diodes for radiation monitoring and protection of the Silicon Vertex Tracker (SVT). We have used the pCVD diamonds for more than 3 years, and the PIN diodes for 7 years. We will describe the SVT and SVT radiation monitoring system as well as the operational difficulties and radiation damage effects on the PIN diodes and pCVD diamonds in a high-energy physics environment.

Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

DEFF Research Database (Denmark)

Ou, Yiyu; Fadil, Ahmed; Ou, Haiyan

Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.......Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction....

Self-Tuning Control of Linear Systems Followed by Deadzones

Directory of Open Access Journals (Sweden)

K. Kazlauskas

2014-02-01

Full Text Available The aim of the present paper is to increase the efficiency of self-tuning generalized minimum variance (GMV control of linear time-invariant (LTI systems followed by deadzone nonlinearities. An approach, based on reordering of observations to be processed for the reconstruction of an unknown internal signal that acts between LTI system and a static nonlinear block of the closed-loop Wiener system, has been developed. The results of GMV self-tuning control of the second order LTI system with an ordinary deadzone are given.

A Homogeneous and Self-Dual Interior-Point Linear Programming Algorithm for Economic Model Predictive Control

DEFF Research Database (Denmark)

Sokoler, Leo Emil; Frison, Gianluca; Skajaa, Anders

2015-01-01

We develop an efficient homogeneous and self-dual interior-point method (IPM) for the linear programs arising in economic model predictive control of constrained linear systems with linear objective functions. The algorithm is based on a Riccati iteration procedure, which is adapted to the linear...... system of equations solved in homogeneous and self-dual IPMs. Fast convergence is further achieved using a warm-start strategy. We implement the algorithm in MATLAB and C. Its performance is tested using a conceptual power management case study. Closed loop simulations show that 1) the proposed algorithm...

Design of a 7-MV Linear Transformer Driver (LTD) for down-hole flash x-ray radiography

International Nuclear Information System (INIS)

Cordova, Steve Ray; Welch, Dale Robert; Oliver, Bryan Velten; Rose, David Vincent; Johnson, David Lee; Bruner, Nichelle Lee; Leckbee, Joshua J.

2008-01-01

Pulsed power driven flash x-ray radiography is a valuable diagnostic for subcritical experiments at the Nevada Test Site. The existing dual-axis Cygnus system produces images using a 2.25 MV electron beam diode to produce intense x-rays from a small source. Future hydrodynamic experiments will likely use objects with higher areal mass, requiring increased x-ray dose and higher voltages while maintaining small source spot size. A linear transformer driver (LTD) is a compact pulsed power technology with applications ranging from pulsed power flash x-ray radiography to high current Z-pinch accelerators. This report describes the design of a 7-MV dual-axis system that occupies the same lab space as the Cygnus accelerators. The work builds on a design proposed in a previous report [1]. This new design provides increased diode voltage from a lower impedance accelerator to improve coupling to low impedance diodes such as the self magnetic pinch (SMP) diode. The design also improves the predicted reliability by operating at a lower charge voltage and removing components that have proven vulnerable to failure. Simulations of the new design and experimental results of the 1-MV prototype are presented

Solvent-Dependent Self-Assembly of 4,7-Dibromo-5,6-bis(octyloxybenzo[c][1,2,5] Thiadiazole on Graphite Surface by Scanning Tunneling Microscopy

Directory of Open Access Journals (Sweden)

Bao Zha

2013-01-01

Full Text Available Solvent effect on self-assembly of 4,7-dibromo-5,6-bis(octyloxybenzo[c][1,2,5] thiadiazole (DBT on a highly oriented graphite (HOPG surface was investigated by scanning tunneling microscopy (STM by using 1-phenyloctane, 1-octanoic acid, and 1-octanol as the solvents. Two different patterns were obtained in 1-phenyloctane and 1-octanoic acid, suggesting that the self-assembly of DBT was solvent dependent. At the 1-phenyloctane/HOPG interface, a linear structure was revealed due to the intermolecular halogen bonding. When 1-octanoic acid and 1-octanol are used as the solvents, the coadsorption of solvent molecules resulting from the hydrogen bonding between DBT and solvent made an important contribution to the formation of a lamellar structure. The results demonstrate that solvents could affect the molecular self-assembly according to the variational intermolecular interactions.

Design of decoupled dual servo stage with voice coil motor and linear motor for XY long stroke ultra-precision scanning system

Science.gov (United States)

Kim, Ki-Hyun; Choi, Young-Man; Gweon, Dae-Gab; Hong, Dong-Pyo; Kim, Koung-Suk; Lee, Suk-Won; Lee, Moon-Gu

2005-12-01

A decoupled dual servo (DDS) stage for ultra-precision scanning system is introduced in this paper. The proposed DDS consists of a 3 axis fine stage for handling and carrying workpieces and a XY coarse stage. Especially, the DDS uses three voice coil motors (VCM) as a planar actuation system of the fine stage to reduce the disturbances due to any mechanical connections with its coarse stage. VCMs are governed by Lorentz law. According to the law and its structure, there are no mechanical connections between coils and magnetic circuits. Moreover, the VCM doesn't have force ripples due to imperfections of commutation components of linear motor systems - currents and flux densities. However, due to the VCM's mechanical constraints the working range of the fine is about 5mm2. To break that hurdle, the coarse stage with linear motors is used for the fine stage to move about 200mm2. Because of the above reasons, the proposed DDS can achieve higher precision scanning than other stages with only one servo. Using MATLAB's Sequential Quadratic Programming (SQP), the VCMs are optimally designed for the highest force under conditions and constraints such as thermal dissipations due to its coil, its size, and so on. For linear motors, Halbach magnet linear motor is proposed and optimally designed in this paper. In addition, for their smooth movements without any frictions, guide systems of the DDS are composed of air bearings. And then, precisely to get their positions, linear scales with 0.1um resolution are used for the coarse's XY motions and plane mirror laser interferometers with 20nm for the fine's XYθz. On scanning, the two stages have same trajectories and are controlled. The control algorithm is Parallel method. The embodied ultra-precision scanning system has about 100nm tracking error and in-positioning stability.

Linear augmented plane wave method for self-consistent calculations

International Nuclear Information System (INIS)

Takeda, T.; Kuebler, J.

1979-01-01

O.K. Andersen has recently introduced a linear augmented plane wave method (LAPW) for the calculation of electronic structure that was shown to be computationally fast. A more general formulation of an LAPW method is presented here. It makes use of a freely disposable number of eigenfunctions of the radial Schroedinger equation. These eigenfunctions can be selected in a self-consistent way. The present formulation also results in a computationally fast method. It is shown that Andersen's LAPW is obtained in a special limit from the present formulation. Self-consistent test calculations for copper show the present method to be remarkably accurate. As an application, scalar-relativistic self-consistent calculations are presented for the band structure of FCC lanthanum. (author)

Self-assembled H-aggregation induced high performance poly (3-hexylthiophene) Schottky diode

Science.gov (United States)

Chaudhary, Vivek; Pandey, Rajiv K.; Prakash, Rajiv; Singh, Arun Kumar

2017-12-01

The investigation of size confinement and chain orientation within the microstructure of a polymer thin film is very important for electronic device applications and fundamental research. Here, we present single step methodology for the synthesis of solution-processable poly (3-hexylthiophene) (P3HT) nanofibers via a self-assembly process. The formation of P3HT nanofibers is confirmed by atomic force microscopy. The synthesized nanofibers are characterized by UV-visible absorption, photoluminescence, and Raman spectroscopy. The aggregation type of self-assembled P3HT is studied by both UV-visible absorbance and photoluminescence spectroscopy. The exciton bandwidth in polymer films is calculated by following the Spano's H-aggregate model and found to be 28 meV. Raman spectroscopy is used to identify the various stretching modes present in nanofibers. The structural investigation using grazing angle X-ray diffraction of nanofibers reveals the presence of alkyl chain ordering. We have fabricated organic Schottky diodes with P3HT nanofibers on indium tin oxide (ITO) coated glass with configuration Al/P3HT/ITO, and current density-voltage characteristics are subsequently used for extracting the electronic parameters of the device. We have also discussed the charge transport mechanism at the metal/polymer interface.

Self-driven particles in linear flows and trapped in a harmonic potential

Science.gov (United States)

Sandoval, Mario; Hidalgo-Gonzalez, Julio C.; Jimenez-Aquino, Jose I.

2018-03-01

We present analytical expressions for the mean-square displacement of self-driven particles in general linear flows and trapped in a harmonic potential. The general expressions are applied to three types of linear flows, namely, shear flow, solid-body rotation flow, and extensional flow. By using Brownian dynamics simulations, the effect of trapping and external linear flows on the particles' distribution is also elucidated. These simulations also enabled us to validate our theoretical results.

Laser-diode pumped self-mode-locked praseodymium visible lasers with multi-gigahertz repetition rate.

Science.gov (United States)

Zhang, Yuxia; Yu, Haohai; Zhang, Huaijin; Di Lieto, Alberto; Tonelli, Mauro; Wang, Jiyang

2016-06-15

We demonstrate efficient laser-diode pumped multi-gigahertz (GHz) self-mode-locked praseodymium (Pr3+) visible lasers with broadband spectra from green to deep red for the first time to our knowledge. With a Pr3+-doped GdLiF4 crystal, stable self-mode-locked visible pulsed lasers at the wavelengths of 522 nm, 607 nm, 639 nm, and 720 nm have been obtained with the repetition rates of 2.8 GHz, 3.1 GHz, 3.1 GHz, and 3.0 GHz, respectively. The maximum output power was 612 mW with the slope efficiency of 46.9% at 639 nm. The mode-locking mechanism was theoretically analyzed. The stable second-harmonic mode-locking with doubled repetition frequency was also realized based on the Fabry-Perot effect formed in the laser cavity. In addition, we find that the polarization directions were turned with lasing wavelengths. This work may provide a new way for generating efficient ultrafast pulses with high- and changeable-repetition rates in the visible range.

Construction of an inexpensive molecular iodine spectrometer using a self-developed Pohl wavemeter around 670 nm wavelength

International Nuclear Information System (INIS)

Barthwal, Sachin; Vudayagiri, Ashok

2015-01-01

We describe the construction of an inexpensive iodine spectrometer with a homemade iodine vapour cell and a self-developed wavemeter based on the Pohl interferometer, around the 670 nm wavelength. This can be easily realized in an undergraduate teaching laboratory to demonstrate the use of a diode laser interferometer using a Pohl interferometer and measurement of the wavelength using image processing techniques. A visible alternative to the infrared diode lasers, the 670 nm diode laser used here gives undergraduate students a chance to perform comprehensive though illustrative atomic physics experiments including the Zeeman effect, the Hanle effect, and the magneto-optic rotation effect with a little tweaking in the present spectrometer. The advantage of the spectrometer is its ease of construction with readily available optics, electronics, evacuation and glass-blowing facilities, and easy analysis algorithm to evaluate the wavelength. The self-developed algorithm of raster scanning and circular averaging gives the researcher insight into the basics of image processing techniques. Resolution approaching 0.5 nm can be easily achieved using such a simple setup. (paper)

[Gas pipeline leak detection based on tunable diode laser absorption spectroscopy].

Science.gov (United States)

Zhang, Qi-Xing; Wang, Jin-Jun; Liu, Bing-Hai; Cai, Ting-Li; Qiao, Li-Feng; Zhang, Yong-Ming

2009-08-01

The principle of tunable diode laser absorption spectroscopy and harmonic detection technique was introduced. An experimental device was developed by point sampling through small multi-reflection gas cell. A specific line near 1 653. 7 nm was targeted for methane measurement using a distributed feedback diode laser as tunable light source. The linearity between the intensity of second harmonic signal and the concentration of methane was determined. The background content of methane in air was measured. The results show that gas sensors using tunable diode lasers provide a high sensitivity and high selectivity method for city gas pipeline leak detection.

A Scanning scheimpflug lidar system developed for urban pollution monitoring

Science.gov (United States)

Yang, Yang; Guan, Peng; Mei, Liang

2018-04-01

A scanning Scheimpflug lidar system based on the Scheimpflug principle has been developed by employing a high power multimode 808 nm laser diode and a highly integrated CMOS sensor in Dalian University of Technology, Dalian, Northern China. Atmospheric scanning measurements in urban area were performed for the studies of particle emission sources.

Diode temperature sensor array for measuring and controlling micro scale surface temperature

International Nuclear Information System (INIS)

Han, Il Young; Kim, Sung Jin

2004-01-01

The needs of micro scale thermal detecting technique are increasing in biology and chemical industry. For example, thermal finger print, Micro PCR(Polymer Chain Reaction), TAS and so on. To satisfy these needs, we developed a DTSA(Diode Temperature Sensor Array) for detecting and controlling the temperature on small surface. The DTSA is fabricated by using VLSI technique. It consists of 32 array of diodes(1,024 diodes) for temperature detection and 8 heaters for temperature control on a 8mm surface area. The working principle of temperature detection is that the forward voltage drop across a silicon diode is approximately proportional to the inverse of the absolute temperature of diode. And eight heaters (1K) made of poly-silicon are added onto a silicon wafer and controlled individually to maintain a uniform temperature distribution across the DTSA. Flip chip packaging used for easy connection of the DTSA. The circuitry for scanning and controlling DTSA are also developed

Fabrication and current–voltage characteristics of NiOx/ZnO based MIIM tunnel diode

Energy Technology Data Exchange (ETDEWEB)

Singh, Aparajita, E-mail: asing044@fiu.edu [BioMEMS and Microsystems Laboratory, Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174, United States of America (United States); Ratnadurai, Rudraskandan [Global Foundaries, Malta, New York 12020 (United States); Kumar, Rajesh [BioMEMS and Microsystems Laboratory, Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174 (United States); Department of Physics, Panjab University, Chandigarh 160014 (India); Krishnan, Subramanian [BioMEMS and Microsystems Laboratory, Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174 (United States); Emirov, Yusuf [Advanced Materials Engineering Research Institute, Florida International University, Miami, Florida 33174 (United States); Bhansali, Shekhar [BioMEMS and Microsystems Laboratory, Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174 (United States)

2015-04-15

Highlights: • Fabrication of single and bilayer tunnel diodes by sputter deposition. • Current–voltage characteristics study. • Enhanced asymmetry and non-linearity. • Study of tunneling mechanism. - Abstract: Enhanced asymmetric and non-linear characteristics of Ni–NiOx based MIM diode has been reported by the addition of a second insulator layer ZnO to form MIIM configuration. These properties are required for applications like energy-harvesting devices, terahertz electronics, macro electronics, etc. In this work, single insulator layer Ni–NiOx–Cr and double insulator Ni–NiOx–ZnO–Cr tunnel diodes were fabricated and their I–V characteristics were studied. A significant increase by one order of magnitude in asymmetry has been observed in case of bilayer NiOx/ZnO dielectric configuration at low voltages. The sensitivity of the NiOx and NiOx/ZnO dielectric configuration in MIM stack was 11 V{sup −1} and 16 V{sup −1}. The improved performance of the bilayer insulator diode is due to the second insulator which enables resonant tunneling or step-tunneling. Resonant tunneling was found to be dominant through trap assisted tunneling in the NiOx/ZnO diode.

Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation

Directory of Open Access Journals (Sweden)

Stanković Koviljka

2009-01-01

Full Text Available The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.

Three-Dimensional Computed Tomography as a Method for Finding Die Attach Voids in Diodes

Science.gov (United States)

Brahm, E. N.; Rolin, T. D.

2010-01-01

NASA analyzes electrical, electronic, and electromechanical (EEE) parts used in space vehicles to understand failure modes of these components. The diode is an EEE part critical to NASA missions that can fail due to excessive voiding in the die attach. Metallography, one established method for studying the die attach, is a time-intensive, destructive, and equivocal process whereby mechanical grinding of the diodes is performed to reveal voiding in the die attach. Problems such as die attach pull-out tend to complicate results and can lead to erroneous conclusions. The objective of this study is to determine if three-dimensional computed tomography (3DCT), a nondestructive technique, is a viable alternative to metallography for detecting die attach voiding. The die attach voiding in two- dimensional planes created from 3DCT scans was compared to several physical cross sections of the same diode to determine if the 3DCT scan accurately recreates die attach volumetric variability

Linear self-focusing of continuous UV laser beam in photo-thermo-refractive glasses.

Science.gov (United States)

Sidorov, Alexander I; Gorbyak, Veronika V; Nikonorov, Nikolay V

2018-03-19

The experimental and theoretical study of continuous UV laser beam propagation through thick silver-containing photo-thermo-refractive glass is presented. It is shown for the first time that self-action of UV Gaussian beam in glass results in its self-focusing. The observed linear effect is non-reversible and is caused by the transformation of subnanosized charged silver molecular clusters to neutral state under UV laser radiation. Such transformation is accompanied by the increase of molecular clusters polarizability and the refractive index increase in irradiated area. As a result, an extended positive lens is formed in glass bulk. In a theoretical study of linear self-focusing effect, the "aberration-free" approximation was used, taking into account spatial distribution of induced absorption.

Giving Students Control over Their Learning; from Self-guided Museum Visits and Field Trips to Using Scanning Technology to Link Content to Earth Samples

Science.gov (United States)

Kirkby, K. C.; Phipps, M.

2011-12-01

While it may seem counterintuitive, sometimes stepping back is one of the more effective pedagogical approaches instructors can make. On museum visits, an instructor's presence fundamentally alters students' experiences and can curtail student learning by limiting questions or discouraging students from exploring their own interests. Students often rely on the instructor and become passive observers, rather than engaged learners. As an alternative to instructor-led visits, self-guided student explorations of museum exhibits proved to be both popular and pedagogically effective. On pre-instruction and post-instruction surveys, these ungraded, self-guided explorations match or exceed the efficacy of traditional graded lab instruction and completely eclipse gains normally achieved by traditional lecture instruction. In addition, these explorations achieve the remarkable goal of integrating undergraduate earth science instruction into students' social lives. Based on the success of the self-guided museum explorations, this fall saw the debut of an attempt to expand this concept to field experiences. A self-guided student field exploration of Saint Anthony Falls focuses on the intersections of geological processes with human history. Students explore the waterfalls' evolution, its early interpretation by 18th and 19th century Dakota and Euro-America societies, and its subsequent social and economic impacts on Upper Midwest societies. Self-guided explorations allow students to explore field settings on their own or with friends and family in a more relaxed manner. At the same time, these explorations give students control over, and responsibility for, their own learning - a powerful pedagogical approach. Student control over their learning is also the goal of an initiative to use scanning technologies, such as linear bar codes, 2D barcodes and radio-frequency identification (RFID), to revolutionize sample identification and study. Scanning technology allows students to

Design and fabrication of metal-insulator-metal diode for high frequency applications

Science.gov (United States)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

Transverse section radionuclide scanning system

International Nuclear Information System (INIS)

Kuhl, D.E.; Edwards, R.Q.

1976-01-01

This invention provides a transverse section radionuclide scanning system for high-sensitivity quantification of brain radioactivity in cross-section picture format in order to permit accurate assessment of regional brain function localized in three dimensions. High sensitivity crucially depends on overcoming the heretofore known raster type scanning, which requires back and forth detector movement involving dead-time or partial enclosure of the scan field. Accordingly, this invention provides a detector array having no back and forth movement by interlaced detectors that enclose the scan field and rotate as an integral unit around one axis of rotation in a slip ring that continuously transmits the detector data by means of laser emitting diodes, with the advantages that increased amounts of data can be continuously collected, processed and displayed with increased sensitivity according to a suitable computer program. 5 claims, 11 figures

Mesoscopic self-organization of a self-assembled supramolecular rectangle on highly oriented pyrolytic graphite and Au(111) surfaces.

Science.gov (United States)

Gong, Jian-Ru; Wan, Li-Jun; Yuan, Qun-Hui; Bai, Chun-Li; Jude, Hershel; Stang, Peter J

2005-01-25

A self-assembled supramolecular metallacyclic rectangle was investigated with scanning tunneling microscopy on highly oriented pyrolytic graphite and Au(111) surfaces. The rectangles spontaneously adsorb on both surfaces and self-organize into well ordered adlayers. On highly oriented pyrolytic graphite, the long edge of the rectangle stands on the surface, forming a 2D molecular network. In contrast, the face of the rectangle lays flat on the Au(111) surface, forming linear chains. The structures and intramolecular features obtained through high-resolution scanning tunneling microscopy imaging are discussed.

Impedance characteristics of the Bz diode on the LION accelerator

International Nuclear Information System (INIS)

Meyerhofer, D.D.; Horioka, K.; Kusse, B.; Rondeau, G.; Struckman, C.

1987-01-01

The LION accelerator at Cornell University is being used to study the characteristics of the applied B/sub z/, or 'barrel' diode. This 0.8 TW, 4 ohm, ion accelerator has the ability to take several shots per day, and hence alloys systematic scans to be performed. An important result of a recent series of experiments is that the diode impedance remains relatively constant, decaying only slowly, during the 50 nsec pulse. When the diode is operated with a 4.5 mm gap and a 21 kG insulating magnetic field, the typical diode parameters, are a voltage of 1 MV and a total current of 250 kA, leading to a diode impedance of 4 ohms and power of 0.25 TW. The diode impedance decays with a 100 nsec time constant. The ion beams have peak currents of roughly 125 kA and typical impedances of Bohms, which decays with a time constant of 25 nsec. The Child-Langmuir gap was approximately 2 mm and closed with a velocity of roughly 2X10/sup 6/ cm/sec. Current experimental work is aimed at characterizing the impedance of the B/sub z/ diode as a function of the applied magnetic field, the A-K gap, the anode curvature, and the anode groove parameters. In addition, the effect of changing the voltage rise with a plasma opening switch and of adding an electron limiter is examined. The ion beam quality is examined at the focus of the barrel diode with a swept Thomson parabola and various Rutherford scattering diagnostics

Decomposed Implicit Models of Piecewise - Linear Networks

Directory of Open Access Journals (Sweden)

J. Brzobohaty

1992-05-01

Full Text Available The general matrix form of the implicit description of a piecewise-linear (PWL network and the symbolic block diagram of the corresponding circuit model are proposed. Their decomposed forms enable us to determine quite separately the existence of the individual breakpoints of the resultant PWL characteristic and their coordinates using independent network parameters. For the two-diode and three-diode cases all the attainable types of the PWL characteristic are introduced.

A New Linearization Technique Using Multi-sinh Doublet

Directory of Open Access Journals (Sweden)

CEHAN, V.

2009-06-01

Full Text Available In this paper a new linearization technique using multi-sinh doublet, implemented with a second generation current conveyor is presented. This new linearization technique is compared with the one based on multi-tanh doublets with linearization series connected diodes on the branches. The comparative study of the two linearization techniques is carried out using both dynamic range analysis, expressed by linearity error and the THD value calculation of output current, and the noise behavior of the two analyzed doublets. For the multi-sinh linearization technique proposed in the paper a method which assures the increase of the dynamic range, keeping the transconductance value constant is presented. This is done by using two design parameters: the number of series connected diodes N, which specifies the desired linear operating range and the k emitters areas ratio of the input stage transistors, which establishes the transconductance value. In the paper is also shown that if the transconductances of the two analyzed doublets are identical, and for the same values of N and k parameters, respectively, the current consumption of the multi-sinh doublet is always smaller than for the multi-tanh doublet.

"Accelerated Perceptron": A Self-Learning Linear Decision Algorithm

OpenAIRE

Zuev, Yu. A.

2003-01-01

The class of linear decision rules is studied. A new algorithm for weight correction, called an "accelerated perceptron", is proposed. In contrast to classical Rosenblatt's perceptron this algorithm modifies the weight vector at each step. The algorithm may be employed both in learning and in self-learning modes. The theoretical aspects of the behaviour of the algorithm are studied when the algorithm is used for the purpose of increasing the decision reliability by means of weighted voting. I...

Experimental evidence of energetic neutrals production in an ion diode

Energy Technology Data Exchange (ETDEWEB)

Pushkarev, A.I., E-mail: aipush@mail.ru; Isakova, Y.I.; Khaylov, I.P.

2015-01-15

The paper presents several experimental proofs of the formation of energetic charge-exchange neutrals in a self-magnetically insulated ion diode with a graphite cathode. The energetic neutrals are thought to be produced as a result of charge exchange process between accelerated ions and stationary neutral molecules. The experiments have been carried out using both a diode with externally applied magnetic insulation (single-pulse mode: 100 ns, 250–300 kV) and a diode with self-magnetic insulation (double-pulse mode: 300–500 ns, 100–150 kV (negative pulse); 120 ns, 250–300 kV (positive pulse)). The motivation for looking at the neutral component of the ion beam came when we compared two independent methods to measure the energy density of the beam. A quantitative comparison of infrared measurements with signals from Faraday cups and diode voltage was made to assess the presence of neutral atoms in the ion beam. As another proof of charge-exchange effects in ion diode we present the results of statistical analysis of diode performance. It was found that the shot-to shot variation of the energy density in a set of 50–100 shots does not exceed 11%, whilst the same variation for ion current density was 20–30%; suggesting the presence of neutrals in the beam. Moreover, the pressure in the zone of ion beam energy dissipation exceeds the results stated in cited references. The difference between our experimental data and results stated by other authors we attribute to the presence of a low-energy charge-exchange neutral component in the ion beam.

Degradation of light emitting diodes: a proposed methodology

International Nuclear Information System (INIS)

Koh, Sau; Vam Driel, Willem; Zhang, G.Q.

2011-01-01

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)

Codification of scan path parameters and development of perimeter scan strategies for 3D bowl-shaped laser forming

Science.gov (United States)

Tavakoli, A.; Naeini, H. Moslemi; Roohi, Amir H.; Gollo, M. Hoseinpour; Shahabad, Sh. Imani

2018-01-01

In the 3D laser forming process, developing an appropriate laser scan pattern for producing specimens with high quality and uniformity is critical. This study presents certain principles for developing scan paths. Seven scan path parameters are considered, including: (1) combined linear or curved path; (2) type of combined linear path; (3) order of scan sequences; (4) the position of the start point in each scan; (5) continuous or discontinuous scan path; (6) direction of scan path; and (7) angular arrangement of combined linear scan paths. Regarding these path parameters, ten combined linear scan patterns are presented. Numerical simulations show continuous hexagonal, scan pattern, scanning from outer to inner path, is the optimized. In addition, it is observed the position of the start point and the angular arrangement of scan paths is the most effective path parameters. Also, further experimentations show four sequences due to creat symmetric condition enhance the height of the bowl-shaped products and uniformity. Finally, the optimized hexagonal pattern was compared with the similar circular one. In the hexagonal scan path, distortion value and standard deviation rather to edge height of formed specimen is very low, and the edge height despite of decreasing length of scan path increases significantly compared to the circular scan path. As a result, four-sequence hexagonal scan pattern is proposed as the optimized perimeter scan path to produce bowl-shaped product.

Rectifying behaviour of self assembled porphyrin/fullerene dyads on Au(111)

International Nuclear Information System (INIS)

Matino, F; Arima, V; Maruccio, G; Phaneuf, R J; Sole, R Del; Mele, G; Vasapollo, G; Cingolani, R; Rinaldi, R

2007-01-01

Here we present an Ultra High Vacuum Scanning Tunnelling Microscopy (UHVSTM) and Scanning Tunnelling Spectroscopy (STS) study of self assembled donor-acceptor conjugate dyads, consisting of fulleropyrrolidines and metallo-porphyrins immobilized on gold. The coverage in the fulleropyrrolidine layers was optimized up to obtain isolated protrusions which we identify with isolated dyads since their lateral dimensions are consistent with the fullerene size. The STS study reveals a diode-like asymmetric behaviour of the dyads, different from the surrounding areas. We investigate also the influence of the tunneling conditions on the rectifying ratio which is found to be dependent on the initial set point conditions and to increase by increasing the tip-sample distance

Rectifying behaviour of self assembled porphyrin/fullerene dyads on Au(111)

Energy Technology Data Exchange (ETDEWEB)

Matino, F [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy); Arima, V [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy); Maruccio, G [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy); Phaneuf, R J [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy); Sole, R Del [Dipartimento di Ingegneria dell' Innovazione - Universita degli Studi di Lecce- via Arnesano, 73100 Lecce (Italy); Mele, G [Dipartimento di Ingegneria dell' Innovazione - Universita degli Studi di Lecce- via Arnesano, 73100 Lecce (Italy); Vasapollo, G [Dipartimento di Ingegneria dell' Innovazione - Universita degli Studi di Lecce- via Arnesano, 73100 Lecce (Italy); Cingolani, R [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy); Rinaldi, R [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy)

2007-04-15

Here we present an Ultra High Vacuum Scanning Tunnelling Microscopy (UHVSTM) and Scanning Tunnelling Spectroscopy (STS) study of self assembled donor-acceptor conjugate dyads, consisting of fulleropyrrolidines and metallo-porphyrins immobilized on gold. The coverage in the fulleropyrrolidine layers was optimized up to obtain isolated protrusions which we identify with isolated dyads since their lateral dimensions are consistent with the fullerene size. The STS study reveals a diode-like asymmetric behaviour of the dyads, different from the surrounding areas. We investigate also the influence of the tunneling conditions on the rectifying ratio which is found to be dependent on the initial set point conditions and to increase by increasing the tip-sample distance.

Theory and experiment on charging and discharging a capacitor through a reverse-biased diode

Science.gov (United States)

Roy, Arijit; Mallick, Abhishek; Adhikari, Aparna; Guin, Priyanka; Chatterjee, Dibyendu

2018-06-01

The beauty of a diode lies in its voltage-dependent nonlinear resistance. The voltage on a charging and discharging capacitor through a reverse-biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. Instead of the exponential dependence of charging and discharging voltages with time for a resistor-capacitor circuit, a linear time dependence is found when the resistor is replaced by a reverse-biased diode. Thus, well controlled positive and negative ramp voltages are obtained from the charging and discharging diode-capacitor circuits. This experiment can readily be performed in an introductory physics and electronics laboratory.

Measurements of the Backstreaming Proton IONS in the Self-Magnetic Pinch (SMP) Diode Utilizing Copper Activation Technique

Science.gov (United States)

Mazarakis, Michael; Cuneo, Michael; Fournier, Sean; Johnston, Mark; Kiefer, Mark; Leckbee, Joshua; Simpson, Sean; Renk, Timothy; Webb, Timothy; Bennett, Nichelle

2016-10-01

The results presented here were obtained with an SMP diode mounted at the front high voltage end of the 8-10-MV RITS Self-Magnetically Insulated Transmission Line (MITL) voltage adder. Our experiments had two objectives: first, to measure the contribution of the back-streaming proton currents emitted from the anode target, and second, to evaluate the energy of those ions and hence the actual Anode-Cathode (A-K) gap voltage. The accelerating voltage quoted in the literature is estimated utilizing para-potential flow theories. Thus, it is interesting to have another independent measurement of the A-K voltage. We have measured the back-streaming protons emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatment, namely, heating at very high temperatures with DC and pulsed current, with RF plasma cleaning, and with both plasma cleaning and heating. We have also evaluated the A-K gap voltage by energy filtering techniques. Sandia is operated by Sandia Corporation, a subsidiary of Lockheed Martin Company, for the US DOE NNSA under Contract No. DE-AC04-94AL85000.

Electron diodes and cavity design for the new 4-MeV injector of the recirculating linear accelerator (RLA)

International Nuclear Information System (INIS)

Mazarakis, M.G.; Smith, D.L.; Poukey, J.W.; Bennett, L.F.; Olson, W.R.; Turman, B.N.

1991-01-01

The authors have designed and constructed four types of electron-beam diodes for the new 4-MV RLA injector: a non-immersed foilless diode, a magnetically immersed foilless diode, a foil diode and an ion-focused foilless diode, They are tailored to fit the new injector cavity. The design goals were to produce high quality 10-kA to 20-kA electron beams with a β perpendicular smaller than 0.2 and a beam radius of the order of 2 cm. These beams will be matched to the RLA IFR channel so β perpendicular must be equal to or smaller than the square root of the ratio of the beam current versus Alfven current for f e = 1. A reentrant anode geometry was selected for the injector cavity design, because it offers substantial savings on the required amount of feromagnetic cores. The inner radius of the outside shell, now only 30 cm, would have been twice as large (60 cm) if a coaxial non-reentrant geometry had been adopted. The shape of the anode and cathode electrodes were carefully selected to minimize the electric field stresses. The field stresses on the inner surface of the outer shell do not exceed 200 kV/cm

Direct writing of micro/nano-scale patterns by means of particle lens arrays scanned by a focused diode pumped Nd:YVO4 laser

Science.gov (United States)

Pena, Ana; Wang, Zengbo; Whitehead, David; Li, Lin

2010-11-01

A practical approach to a well-known technique of laser micro/nano-patterning by optical near fields is presented. It is based on surface patterning by scanning a Gaussian laser beam through a self-assembled monolayer of silica micro-spheres on a single-crystalline silicon (Si) substrate. So far, the outcome of this kind of near-field patterning has been related to the simultaneous, parallel surface-structuring of large areas either by top hat or Gaussian laser intensity distributions. We attempt to explore the possibility of using the same technique in order to produce single, direct writing of features. This could be of advantage for applications in which only some areas need to be patterned (i.e. local area selective patterning) or single lines are required (e.g. a particular micro/nano-fluidic channel). A diode pumped Nd:YVO4 laser system (wavelength of 532 nm, pulse duration of 8 ns, repetition rate of 30 kHz) with a computer-controlled 3 axis galvanometer beam scanner was employed to write user-defined patterns through the particle lens array on the Si substrate. After laser irradiation, the obtained patterns which are in the micro-scale were composed of sub-micro/micro-holes or bumps. The micro-pattern resolution depends on the dimension of both the micro-sphere’s diameter and the beam’s spot size. The developed technique could potentially be employed to fabricate photonic crystal structures mimicking nature’s butterfly wings and anti-reflective “moth eye” arrays for photovoltaic cells.

Diode line scanner for beam diagnostics

International Nuclear Information System (INIS)

Gustov, S.A.

1987-01-01

The device-scanning diode line is described. It is applied for beam profile measuring with space precision better than ± 0.5 mm and with discreteness of 3 mm along Y-axis and 0.25 mm along X-axis. The device is easy in construction, reliable and has a small time of information acquisition (2-5 min). The working range is from 100 to 10 6 rad/min (10 6 -10 10 part/mm 2 /s for 660 MeV protons). Radioresistance is 10 7 rad. The device can be applied for precise beam line element tuning at beam transporting and emittance measuring. The fixed diode line (a simplified device version) has smaller dimensions and smaller time of data acquisition (2-5 s). It is applied for quick preliminary beamline tuning. The flowsheet and different variants of data representation on beam profile are given

Self-consistent field theory based molecular dynamics with linear system-size scaling

Energy Technology Data Exchange (ETDEWEB)

Richters, Dorothee [Institute of Mathematics and Center for Computational Sciences, Johannes Gutenberg University Mainz, Staudinger Weg 9, D-55128 Mainz (Germany); Kühne, Thomas D., E-mail: kuehne@uni-mainz.de [Institute of Physical Chemistry and Center for Computational Sciences, Johannes Gutenberg University Mainz, Staudinger Weg 7, D-55128 Mainz (Germany); Technical and Macromolecular Chemistry, University of Paderborn, Warburger Str. 100, D-33098 Paderborn (Germany)

2014-04-07

We present an improved field-theoretic approach to the grand-canonical potential suitable for linear scaling molecular dynamics simulations using forces from self-consistent electronic structure calculations. It is based on an exact decomposition of the grand canonical potential for independent fermions and does neither rely on the ability to localize the orbitals nor that the Hamilton operator is well-conditioned. Hence, this scheme enables highly accurate all-electron linear scaling calculations even for metallic systems. The inherent energy drift of Born-Oppenheimer molecular dynamics simulations, arising from an incomplete convergence of the self-consistent field cycle, is circumvented by means of a properly modified Langevin equation. The predictive power of the present approach is illustrated using the example of liquid methane under extreme conditions.

[Measurement of cardiac output by thermodilution with a diode as a temperature sensor].

Science.gov (United States)

Díaz Fernández, A; Benítez, D; Sánchez Tello, G; Márquez, L A

1979-01-01

An area integrator for the thermodilution curve in cardiac output measurement is described. A new temperature sensor is used, a diode with some advantages over the thermistor normally used. The main advantages are: easy calibration and replacement, and broad range of linearity. The cardiac output values obtained in dog with the integrator follow a linear relationship with those of the flowmeter. In simultaneous measurements the correlation is R = 0.96. Using a diode as temperature sensor a modification of the Steward Hamilton equation (used for thermistor) is necessary. With this new equation a monogram is performed to calculate the cardiac output from the area given by the numerical integrator.

Self-Similar Nonlinear Dynamical Solutions for One-Component Nonneutral Plasma in a Time-Dependent Linear Focusing Field

International Nuclear Information System (INIS)

Qin, Hong; Davidson, Ronald C.

2011-01-01

In a linear trap confining a one-component nonneutral plasma, the external focusing force is a linear function of the configuration coordinates and/or the velocity coordinates. Linear traps include the classical Paul trap and the Penning trap, as well as the newly proposed rotating-radio- frequency traps and the Mobius accelerator. This paper describes a class of self-similar nonlinear solutions of nonneutral plasma in general time-dependent linear focusing devices, with self-consistent electrostatic field. This class of nonlinear solutions includes many known solutions as special cases.

Portable, universal, and visual ion sensing platform based on the light emitting diode-based self-referencing-ion selective field-effect transistor.

Science.gov (United States)

Zhang, Xiaowei; Han, Yanchao; Li, Jing; Zhang, Libing; Jia, Xiaofang; Wang, Erkang

2014-02-04

In this work, a novel and universal ion sensing platform was presented, which enables the visual detection of various ions with high sensitivity and selectivity. Coaxial potential signals (millivolt-scale) of the sample from the self-referencing (SR) ion selective chip can be transferred into the ad620-based amplifier with an output of volt-scale potentials. The amplified voltage is high enough to drive a light emitting diode (LED), which can be used as an amplifier and indicator to report the sample information. With this double amplification device (light emitting diode-based self-referencing-ion selective field-effect transistor, LED-SR-ISFET), a tiny change of the sample concentration can be observed with a distinguishable variation of LED brightness by visual inspection. This LED-based luminescent platform provided a facile, low-cost, and rapid sensing strategy without the need of additional expensive chemiluminescence reagent and instruments. Moreover, the SR mode also endows this device excellent stability and reliability. With this innovative design, sensitive determination of K(+), H(+), and Cl(-) by the naked eye was achieved. It should also be noticed that this sensing strategy can easily be extended to other ions (or molecules) by simply integrating the corresponding ion (or molecule) selective electrode.

Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser

Science.gov (United States)

Alloush, M. Ali; Pilny, Rouven H.; Brenner, Carsten; Klehr, Andreas; Knigge, Andrea; Tränkle, Günther; Hofmann, Martin R.

2018-02-01

Semiconductor lasers are promising sources for generating ultrashort pulses. They are directly electrically pumped, allow for a compact design, and therefore they are cost-effective alternatives to established solid-state systems. Additionally, their emission wavelength depends on the bandgap which can be tuned by changing the semiconductor materials. Theoretically, the obtained pulse width can be few tens of femtoseconds. However, the generated pulses are typically in the range of several hundred femtoseconds only. Recently, it was shown that by implementing a spatial light modulator (SLM) for phase and amplitude control inside the resonator the optical bandwidth can be optimized. Consequently, by using an external pulse compressor shorter pulses can be obtained. We present a Fourier-Transform-External-Cavity setup which utilizes an ultrafast edge-emitting diode laser. The used InGaAsP diode is 1 mm long and emits at a center wavelength of 850 nm. We investigate the best conditions for passive, active and hybrid mode-locking operation using the method of self-adaptive pulse shaping. For passive mode-locking, the bandwidth is increased from 2.34 nm to 7.2 nm and ultrashort pulses with a pulse width of 216 fs are achieved after external pulse compression. For active and hybrid mode-locking, we also increased the bandwidth. It is increased from 0.26 nm to 5.06 nm for active mode-locking and from 3.21 nm to 8.7 nm for hybrid mode-locking. As the pulse width is strongly correlated with the bandwidth of the laser, we expect further reduction in the pulse duration by increasing the bandwidth.

Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

International Nuclear Information System (INIS)

Chand, Subhash; Bala, Saroj

2007-01-01

The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

Magnetic insulation regimes in high-current diodes and transmission lines of conical configuration

International Nuclear Information System (INIS)

Vasilenko, O.I.; Voronin, V.S.; Lebedev, A.N.

1977-01-01

Steady states of the electron current in a high-voltage diode and of the transmission line of conical configuration at emission current restriction by the space are considered on the basis of the self-consistant kinetic description in connection with the prospects of controlled thermonuclear synthesis. Proceeding from the magnetic self-insulation principle solved are the problems of controling the emission electron current in the double-electron geometry to prevent it from being present on the anode in the line regime and to achieve its maximum focusing in the diode regime. The motion of plasma boundaries as well as the probable contribution of the ion component of the current were not taken into consideration. It is shown that the beam focusing on the system axis takes place at sufficiently strong currents. It is connected with the fact that some part of the full diode current runs on the cathode surface. The results were compared with existing approximate diode models and with the experimetal data on focusien of strong-current beams

Developmental memory capacity resources of typical children retrieving picture communication symbols using direct selection and visual linear scanning with fixed communication displays.

Science.gov (United States)

Wagner, Barry T; Jackson, Heather M

2006-02-01

This study examined the cognitive demands of 2 selection techniques in augmentative and alternative communication (AAC), direct selection, and visual linear scanning, by determining the memory retrieval abilities of typically developing children when presented with fixed communication displays. One hundred twenty typical children from kindergarten, 1st, and 3rd grades were randomly assigned to either a direct selection or visual linear scanning group. Memory retrieval was assessed through word span using Picture Communication Symbols (PCSs). Participants were presented various numbers and arrays of PCSs and asked to retrieve them by placing identical graphic symbols on fixed communication displays with grid layouts. The results revealed that participants were able to retrieve more PCSs during direct selection than scanning. Additionally, 3rd-grade children retrieved more PCSs than kindergarten and 1st-grade children. An analysis on the type of errors during retrieval indicated that children were more successful at retrieving the correct PCSs than the designated location of those symbols on fixed communication displays. AAC practitioners should consider using direct selection over scanning whenever possible and account for anticipatory monitoring and pulses when scanning is used in the service delivery of children with little or no functional speech. Also, researchers should continue to investigate AAC selection techniques in relationship to working memory resources.

An electronic probe micro-analyser. A linear scan device; Microanalyseur a sonde electronique. Dispositif de balayage lineaire

Energy Technology Data Exchange (ETDEWEB)

Kirianenko, A; Maurice, F [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1963-07-01

The Castaing electronic probe micro-analyser makes possible static analysis at successive points. For two years this apparatus has been equipped by its constructor with an automatic device for surface scanning. In order to increase the micro-analyser's efficiency a 'linear' scan device has been incorporated making it possible to obtain semi-quantitative analyses very rapidly. (authors) [French] Le microanalyseur a sonde electronique de Castaing permet l'analyse statique en des points successifs. Depuis deux ans, cet appareil a ete equipe par son constructeur d'un dispositif de balayage automatique 'surface'. Afin d'augmenter l'efficacite du microanalyaeur, on a adapte un dispositif de balayage 'lineaire' qui permet d'obtenir tres rapidement des analyses semi-quantitative. (auteurs)

Circularly polarized light to study linear magneto-optics for ferrofluids: θ-scan technique

Science.gov (United States)

Meng, Xiangshen; Huang, Yan; He, Zhenghong; Lin, Yueqiang; Liu, Xiaodong; Li, Decai; Li, Jian; Qiu, Xiaoyan

2018-06-01

Circularly polarized light can be divided into two vertically linearly polarized light beams with  ±π/2 phase differences. In the presence of an external magnetic field, when circularly polarized light travels through a ferrofluid film, whose thickness is no more than that of λ/4 plate, magneto-optical, magnetic birefringence and dichroism effects cause the transmitted light to behave as elliptically polarized light. Using angular scan by a continuously rotating polarizer as analyzer, the angular (θ) distribution curve of relative intensity (T) corresponding to elliptically polarized light can be measured. From the T  ‑  θ curve having ellipsometry, the parameters such as the ratio of short to long axis, and angular orientation of the long axis to the vertical field direction can be obtained. Thus, magnetic birefringence and dichroism can be probed simultaneously by measuring magneto-optical, positive or negative birefringence and dichroism features from the transmission mode. The proposed method is called θ-scan technique, and can accurately determine sample stability, magnetic field direction, and cancel intrinsic light source ellipticity. This study may be helpful to further research done to ferrofluids and other similar colloidal samples with anisotropic optics.

Self-assembly behavior of a linear-star supramolecular amphiphile based on host-guest complexation.

Science.gov (United States)

Wang, Juan; Wang, Xing; Yang, Fei; Shen, Hong; You, Yezi; Wu, Decheng

2014-11-04

A star polymer, β-cyclodextrin-poly(l-lactide) (β-CD-PLLA), and a linear polymer, azobenzene-poly(ethylene glycol) (Azo-PEG), could self-assemble into a supramolecular amphiphilic copolymer (β-CD-PLLA@Azo-PEG) based on the host-guest interaction between β-CD and azobenzene moieties. This linear-star supramolecular amphiphilic copolymer further self-assembled into a variety of morphologies, including sphere-like micelle, carambola-like micelle, naan-like micelle, shuttle-like lamellae, tube-like fiber, and random curled-up lamellae, by tuning the length of hydrophilic or hydrophobic chains. The variation of morphology was closely related to the topological structure and block ratio of the supramolecular amphiphiles. These self-assembly structures could disassemble upon an ultraviolet (UV) light irradiation.

Self-organized complex space charge configurations at the origin of flicker noise

International Nuclear Information System (INIS)

Popescu, S.; Lozneanu, E.; Sanduloviciu, M.

2003-01-01

Based on experimental results obtained from a plasma diode we explain the fluctuations of the voltage supported by a non-linear gaseous conductor by the dynamical behavior of spatiotemporal patterns, in the form of moving double layers, formed after self-organization. Such phenomena appear when the system is subjected to an external constraint that creates and maintains a local gradient of electron kinetic energy. The described phenomenology suggests a plausible explanation for the appearance of flicker noise also in other physical systems, as for example semiconductors and, implicitly, offers a new model for the so-called self-organized criticality concept

Generation of a cold, intense relativistic electron beam using a magnetized foilless diode

International Nuclear Information System (INIS)

Sheffield, R.L.; Montgomery, M.D.; Parker, J.V.; Riepe, K.B.; Singer, S.

1982-01-01

An annular electron beam with less than 30 mrad of angular velocity spread, a radius of 1 cm, and a current density exceeding 0.4 MA/cm 2 has been generated with a magnetized foilless diode. The diode current loss is limited to less than a few percent by careful design of the tapered transition region connecting a self-magnetically insulated vacuum transmission line to the externally magnetized foilless diode. Details of the transition section design and operating characteristics of the electron beam generator are given

Patient dosimetry quality assurance program with a commerical diode system

International Nuclear Information System (INIS)

Lee, P.C.; Sawicka, J.M.; Glasgow, G.P.

1994-01-01

The purpose was to evaluate a commercial silicone diode dosimeter for a patient dosimetry quality assurance program. The diode dosimeter was calibrated against an ion chamber, and percentage depth dose, linearity, anisotrophy, virtual source position, and field size factor studies were performed. Correction factors for lack of full scatter medium in the diode entrance and exit dose measurements were acquired. Dosimetry equations were proposed for calculation of dose delivered at isocenter. Diode dose accuracy and reproducibility were tested on phantom and on four patients. A patient dosimetry quality assurance program based on diode-measured dose was instituted and patient dose data were collected. Diode measured percentage depth dose and field factors agreed to within 3% with those measured with an ion chamber. The diode exhibited less than 1.7% angular dose anisotrophy and less than 0.5% nonlinearity up to 4 Gy. Diode dose measurements in phantom showed that the calculated doses differed from the prescribed dose by less than 1.%; the diode exhibited a daily dose reproducibility of better than 0.2%. On four selected patients, the measured dose reproducibility was 1.5%; the average calculated doses were all within ± 7% of the prescribed doses. For 33 of 40 patients treated with a 6 MW beam, measured doses were within ± 7% of the prescribed doses. For 11 out of 12 patients, a second repeat measurements yielded doses within ± 7% of the prescribed doses. The proposed diode-based patient dosimetry quality assurance program with dose tolerance at ± 7% is simple and feasible. It is capable of detecting certain serious treatment errors such as incorrect daily dose greater than 7%, incorrect wedge use, incorrect photon energy and patient setup errors involving some incorrect source-to-surface-distance vs. source-to-axis-distance treatments. 13 refs., 5 figs., 5 tabs

Performance of EPI diodes as dosimeters for photon beam radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Santos, Thais C. dos; Bizetto, Cesar A., E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Neves-Junior, Wellington F.P.; Haddad, Cecilia M.K. [Hospital Sirio Libanes (HSL), Sao Paulo, SP (Brazil); Goncalves, Josemary A.C.; Bueno, Carmen C. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Pontificia Universidade Catolica de Sao Paulo (PUC-SP), SP (Brazil)

2011-07-01

In this work we present the preliminary results about the performance of an epitaxial (EPI) diode as on-line dosimeter for photon beam radiotherapy. The diode used was processed at University of Hamburg on n-type 75 {mu}m thick epitaxial silicon layer grown on a highly doped n-type 300 {mu}m thick Czochralski (Cz) silicon substrate. The measurements were performed with a diode which not received any type of pre-dose. In order to use this device as a dosimeter, it was enclosed in a black polymethylmethacrylate (PMMA) probe. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. During all measurements, the diode was held between PMMA plates, placed at 10.0 cm depth and centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. The short-term repeatability was measured with photon beams of 6 and 18 MV energy by registering five consecutive current signals for the same radiation dose. The current signals induced showed good instantaneous repeatability of the diode, characterized by a smallest coefficient of variation (CV) of 0.21%. Furthermore, the dose-response curves of the diode were quite linear with the highest charge sensitivity achieved of 5.0 {mu}C/Gy. It worth noting that still remains to be investigated the pre-dose influence on epitaxial silicon diode response in radiotherapy photon beam dosimetry, the long term stability and the radiation hardness of these diodes for absorbed doses higher than that investigated in this work. All these studies are under way. (author)

In Vivo Diode Dosimetry for Imrt Treatments Generated by Pinnacle Treatment Planning System

International Nuclear Information System (INIS)

Alaei, Parham; Higgins, Patrick D.; Gerbi, Bruce J.

2009-01-01

Dose verification using diodes has been proposed and used for intensity modulated radiation therapy (IMRT) treatments. We have previously evaluated diode response for IMRT deliveries planned with the Eclipse/Helios treatment planning system. The Pinnacle treatment planning system generates plans that are delivered in a different fashion than Eclipse. Whereas the Eclipse-generated segments are delivered in organized progression from one side of each field to the other, Pinnacle-generated segments are delivered in a much more randomized fashion to different areas within the field. This makes diode measurements at a point more challenging because the diode may be exposed fully or partially to multiple small segments during one single field's treatment as opposed to being exposed to very few segments scanning across the diode during an Eclipse-generated delivery. We have evaluated in vivo dosimetry for Pinnacle-generated IMRT plans and characterized the response of the diode to various size segments on phantom. We present results of patient measurements on approximately 300 fields, which show that 76% of measurements agree to within 10% of the treatment-plan generated calculated doses. Of the other 24%, about 11% are within 15% of the calculated dose. Comparison of these with phantom measurements indicates that many of the discrepancies are due to diode positioning on patients and increased diode response at short source-to-surface distances (SSDs), with the remainder attributable to other factors such as segment size and partial irradiation of the diode

Linearized self-consistent quasiparticle GW method: Application to semiconductors and simple metals

International Nuclear Information System (INIS)

Kutepov, A. L.

2017-01-01

We present a code implementing the linearized self-consistent quasiparticle GW method (QSGW) in the LAPW basis. Our approach is based on the linearization of the self-energy around zero frequency which differs it from the existing implementations of the QSGW method. The linearization allows us to use Matsubara frequencies instead of working on the real axis. This results in efficiency gains by switching to the imaginary time representation in the same way as in the space time method. The all electron LAPW basis set eliminates the need for pseudopotentials. We discuss the advantages of our approach, such as its N 3 scaling with the system size N, as well as its shortcomings. We apply our approach to study the electronic properties of selected semiconductors, insulators, and simple metals and show that our code produces the results very close to the previously published QSGW data. Our implementation is a good platform for further many body diagrammatic resummations such as the vertex-corrected GW approach and the GW+DMFT method.

Atomic-resolution measurements with a new tunable diode laser-based interferometer

DEFF Research Database (Denmark)

Silver, R.M.; Zou, H.; Gonda, S.

2004-01-01

is lightweight and is mounted directly on an ultra-high vacuum scanning tunneling microscope capable of atomic resolution. We report the simultaneous acquisition of an atomic resolution image, while the relative lateral displacement of the tip along the sample distance is measured with the new tunable diode...

Linear Scaling Solution of the Time-Dependent Self-Consistent-Field Equations

Directory of Open Access Journals (Sweden)

Matt Challacombe

2014-03-01

Full Text Available A new approach to solving the Time-Dependent Self-Consistent-Field equations is developed based on the double quotient formulation of Tsiper 2001 (J. Phys. B. Dual channel, quasi-independent non-linear optimization of these quotients is found to yield convergence rates approaching those of the best case (single channel Tamm-Dancoff approximation. This formulation is variational with respect to matrix truncation, admitting linear scaling solution of the matrix-eigenvalue problem, which is demonstrated for bulk excitons in the polyphenylene vinylene oligomer and the (4,3 carbon nanotube segment.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

Science.gov (United States)

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-04-19

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

Science.gov (United States)

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-01-01

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling

Directory of Open Access Journals (Sweden)

Umesh Kumar

1995-01-01

junction diode have been developed. The results of computer simulated examples have been presented in each case. The non-linear lumped model for Gunn is a unified model as it describes the diffusion effects as the-domain traves from cathode to anode. An additional feature of this model is that it describes the domain extinction and nucleation phenomena in Gunn dioder with the help of a simple timing circuit. The non-linear lumped model for SCR is general and is valid under any mode of operation in any circuit environment. The memristive circuit model for p-n junction diodes is capable of simulating realistically the diode’s dynamic behavior under reverse, forward and sinusiodal operating modes. The model uses memristor, the charge-controlled resistor to mimic various second-order effects due to conductivity modulation. It is found that both storage time and fall time of the diode can be accurately predicted.

Monte Carlo modelling of Schottky diode for rectenna simulation

Science.gov (United States)

Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

2017-09-01

Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters

Science.gov (United States)

Ilican, Saliha; Gorgun, Kamuran; Aksoy, Seval; Caglar, Yasemin; Caglar, Mujdat

2018-03-01

We present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) spectroscopy were used to analyze the microstructures and crystalline structures of these films, respectively. The p-Si/n-ZnO:Al heterojunction diodes were fabricated. The current-voltage (I-V) characteristics of these diodes were measured at room temperature. The important electrical parameters such as series resistance, the ideality factor and the barrier height were determined by performing plots from the forward bias I-V characteristics using different methods. The obtained results indicate that Al doping improve the electrical properties of the p-Si/n-ZnO diode. The best rectification properties were observed in the p-Si/n-ZnO:5%Al heterojunction diode, so only capacitance-voltage (C-V) measurements of this diode were taken. Electrical parameter values such as series resistance, the built-in potential and the acceptor concentration calculated for this heterojunction diode.

Pin Diode Detector For Radiation Field Monitoring In A Current Mode

International Nuclear Information System (INIS)

Beck, A.; Wengrowicz, U.; Kadmon, Y.; Tirosh, D.; Osovizky, A.; Vulasky, E.; Tal, N.

1999-01-01

Thus paper presents calculations and tests made for a detector based on a bare Pin diode and a Pin diode coupled to a plastic scintillator. These configurations have a variety of applications in radiation field monitoring. For example, the Positron Emission Tomography (PET) technology which becomes an established diagnostic imaging modality. Flour-18 is one of the major isotopes being used by PET imaging. The PET method utilizes short half life β + radioisotopes which, by annihilation, produce a pair of high energy photons (511 keV). Fluoro-deoxyglucose producers are required to meet federal regulations and licensing requirements. Some of the regulations are related to the production in chemistry modules regarding measuring the Start Of Synthesis (SOS) activity and verifying the process repeatability. Locating a radiation detector based on Pin diode inside the chemistry modules is suitable for this purpose. The dimensions of a Pin diode based detector can be small, with expected linearity over several scale decades

Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

Science.gov (United States)

Eklund, Karin; Ahnesjö, Anders

2010-11-01

Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode

Traceable X,Y self-calibration at single nm level of an optical microscope used for coherence scanning interferometry

Science.gov (United States)

Ekberg, Peter; Mattsson, Lars

2018-03-01

Coherence scanning interferometry used in optical profilers are typically good for Z-calibration at nm-levels, but the X,Y accuracy is often left without further notice than typical resolution limits of the optics, i.e. of the order of ~1 µm. For the calibration of metrology tools we rely on traceable artefacts, e.g. gauge blocks for traditional coordinate measurement machines, and lithographically mask made artefacts for microscope calibrations. In situations where the repeatability and accuracy of the measurement tool is much better than the uncertainty of the traceable artefact, we are bound to specify the uncertainty based on the calibration artefact rather than on the measurement tool. This is a big drawback as the specified uncertainty of a calibrated measurement may shrink the available manufacturing tolerance. To improve the uncertainty in X,Y we can use self-calibration. Then, we do not need to know anything more than that the artefact contains a pattern with some nominal grid. This also gives the opportunity to manufacture the artefact in-house, rather than buying a calibrated and expensive artefact. The self-calibration approach we present here is based on an iteration algorithm, rather than the traditional mathematical inversion, and it leads to much more relaxed constrains on the input measurements. In this paper we show how the X,Y errors, primarily optical distortions, within the field of view (FOV) of an optical coherence scanning interferometry microscope, can be reduced with a large factor. By self-calibration we achieve an X,Y consistency in the 175  ×  175 µm2 FOV of ~2.3 nm (1σ) using the 50×  objective. Besides the calibrated coordinate X,Y system of the microscope we also receive, as a bonus, the absolute positions of the pattern in the artefact with a combined uncertainty of 6 nm (1σ) by relying on a traceable 1D linear measurement of a twin artefact at NIST.

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

Energy Technology Data Exchange (ETDEWEB)

Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2014-02-03

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

Thermal-Induced Non-linearity of Ag Nano-fluid Prepared using γ-Radiation Method

International Nuclear Information System (INIS)

Esmaeil Shahriari; Wan Mahmood Mat Yunus; Zainal Abidin Talib; Elias Saion

2011-01-01

The non-linear refractive index of Ag nano-fluids prepared by γ-radiation method was investigated using a single beam z-scan technique. Under CW 532 nm laser excitation with power output of 40 mW, the Ag nano-fluids showed a large thermal-induced non-linear refractive index. In the present work it was determined that the non-linear refractive index for Ag nano-fluids is -4.80x10 -8 cm 2 / W. The value of Δn 0 was calculated to be -2.05x10 -4 . Our measurements also confirmed that the non-linear phenomenon was caused by the self-defocusing process making them good candidates for non linear optical devices. (author)

Precision controlled atomic resolution scanning transmission electron microscopy using spiral scan pathways

Science.gov (United States)

Sang, Xiahan; Lupini, Andrew R.; Ding, Jilai; Kalinin, Sergei V.; Jesse, Stephen; Unocic, Raymond R.

2017-03-01

Atomic-resolution imaging in an aberration-corrected scanning transmission electron microscope (STEM) can enable direct correlation between atomic structure and materials functionality. The fast and precise control of the STEM probe is, however, challenging because the true beam location deviates from the assigned location depending on the properties of the deflectors. To reduce these deviations, i.e. image distortions, we use spiral scanning paths, allowing precise control of a sub-Å sized electron probe within an aberration-corrected STEM. Although spiral scanning avoids the sudden changes in the beam location (fly-back distortion) present in conventional raster scans, it is not distortion-free. “Archimedean” spirals, with a constant angular frequency within each scan, are used to determine the characteristic response at different frequencies. We then show that such characteristic functions can be used to correct image distortions present in more complicated constant linear velocity spirals, where the frequency varies within each scan. Through the combined application of constant linear velocity scanning and beam path corrections, spiral scan images are shown to exhibit less scan distortion than conventional raster scan images. The methodology presented here will be useful for in situ STEM imaging at higher temporal resolution and for imaging beam sensitive materials.

Simulation of cylindrical Pierce diodes with radial flow

International Nuclear Information System (INIS)

Alves, M.V.; Gnavi, G.; Gratton, F.T.; Buenos Aires Univ.

1996-01-01

In this paper we study the electron instability and the non linear behaviour of cylindrical Pierce's diodes by particle simulation. We ignore here the ion contribution (ions are fixed at a 1/r density and given a very large mass) to give perspicuity to the electron dynamics, and to facilitate comparison with existing theory. (author). 8 refs., 10 figs

Dynamics of decanethiol self-assembled monolayers on Au(111) studied by Scanning tunnelling microscopy

NARCIS (Netherlands)

Wu, Hairong; Sotthewes, Kai; Kumar, Avijit; Vancso, Gyula J.; Schön, Peter Manfred; Zandvliet, Henricus J.W.

2013-01-01

We investigated the dynamics of decanethiol self-assembled monolayers on Au(111) surfaces using time-resolved scanning tunneling microscopy at room temperature. The expected ordered phases (β, δ, χ*, and ) and a disordered phase (ε) were observed. Current–time traces with the feedback loop disabled

THE STUDY OF SELF-BALANCED POTATO SORTING MACHINE WITH LINEAR INDUCTION DRIVE

OpenAIRE

Linenko A. V.; Baynazarov V. G.; Kamalov T. I.

2016-01-01

In the article we have considered the self-balanced potato sorting machine differing from existing designs of self-balanced potato sorting machines with an oscillatory electric drive. That drive uses a linear induction motor. As the counterbalancing device, the method of the duplicating mechanism is applied. The duplicating mechanism is a specular reflection of the main working body, and also participates in technological process. Its application in the drive of machine allows not only to inc...

Eye-safe diode laser Doppler lidar with a MEMS beam-scanner

DEFF Research Database (Denmark)

Hu, Qi; Pedersen, Christian; Rodrigo, Peter John

2016-01-01

We present a novel Doppler lidar that employs a cw diode laser operating at 1.5 μm and a micro-electro-mechanical-system scanning mirror (MEMS-SM). In this work, two functionalities of the lidar system are demonstrated. Firstly, we describe the capability to effectively steer the lidar probe beam...

Assessment of the setup dependence of detector response functions for mega-voltage linear accelerators

Energy Technology Data Exchange (ETDEWEB)

Fox, Christopher; Simon, Tom; Simon, Bill; Dempsey, James F.; Kahler, Darren; Palta, Jatinder R.; Liu Chihray; Yan Guanghua [Sun Nuclear Inc., 425-A Pineda Court, Melbourne, Florida 32940 and Department of Radiation Oncology, University of Florida, P.O. Box 100385, Gainesville, Florida 32610-0385 (United States); NRE, 202 Nuclear Science Building, University of Florida, P.O. Box 118300, Gainesville, Florida 32611-8300 and Sun Nuclear Inc., 425-A Pineda Court, Melbourne, Florida 32940 (United States); Sun Nuclear Inc., 425-A Pineda Court, Melbourne, Florida 32940 (United States); ViewRay Inc., 2 Thermo Fisher Way, Oakwood Village, Ohio 44146 (United States); Department of Radiation Oncology, University of Florida, P.O. Box 100385, Gainesville, Florida 32610-0385 (United States)

2010-02-15

Purpose: Accurate modeling of beam profiles is important for precise treatment planning dosimetry. Calculated beam profiles need to precisely replicate profiles measured during machine commissioning. Finite detector size introduces perturbations into the measured profiles, which, in turn, impact the resulting modeled profiles. The authors investigate a method for extracting the unperturbed beam profiles from those measured during linear accelerator commissioning. Methods: In-plane and cross-plane data were collected for an Elekta Synergy linac at 6 MV using ionization chambers of volume 0.01, 0.04, 0.13, and 0.65 cm{sup 3} and a diode of surface area 0.64 mm{sup 2}. The detectors were orientated with the stem perpendicular to the beam and pointing away from the gantry. Profiles were measured for a 10x10 cm{sup 2} field at depths ranging from 0.8 to 25.0 cm and SSDs from 90 to 110 cm. Shaping parameters of a Gaussian response function were obtained relative to the Edge detector. The Gaussian function was deconvolved from the measured ionization chamber data. The Edge detector profile was taken as an approximation to the true profile, to which deconvolved data were compared. Data were also collected with CC13 and Edge detectors for additional fields and energies on an Elekta Synergy, Varian Trilogy, and Siemens Oncor linear accelerator and response functions obtained. Response functions were compared as a function of depth, SSD, and detector scan direction. Variations in the shaping parameter were introduced and the effect on the resulting deconvolution profiles assessed. Results: Up to 10% setup dependence in the Gaussian shaping parameter occurred, for each detector for a particular plane. This translated to less than a {+-}0.7 mm variation in the 80%-20% penumbral width. For large volume ionization chambers such as the FC65 Farmer type, where the cavity length to diameter ratio is far from 1, the scan direction produced up to a 40% difference in the shaping

Assessment of the setup dependence of detector response functions for mega-voltage linear accelerators

International Nuclear Information System (INIS)

Fox, Christopher; Simon, Tom; Simon, Bill; Dempsey, James F.; Kahler, Darren; Palta, Jatinder R.; Liu Chihray; Yan Guanghua

2010-01-01

Purpose: Accurate modeling of beam profiles is important for precise treatment planning dosimetry. Calculated beam profiles need to precisely replicate profiles measured during machine commissioning. Finite detector size introduces perturbations into the measured profiles, which, in turn, impact the resulting modeled profiles. The authors investigate a method for extracting the unperturbed beam profiles from those measured during linear accelerator commissioning. Methods: In-plane and cross-plane data were collected for an Elekta Synergy linac at 6 MV using ionization chambers of volume 0.01, 0.04, 0.13, and 0.65 cm 3 and a diode of surface area 0.64 mm 2 . The detectors were orientated with the stem perpendicular to the beam and pointing away from the gantry. Profiles were measured for a 10x10 cm 2 field at depths ranging from 0.8 to 25.0 cm and SSDs from 90 to 110 cm. Shaping parameters of a Gaussian response function were obtained relative to the Edge detector. The Gaussian function was deconvolved from the measured ionization chamber data. The Edge detector profile was taken as an approximation to the true profile, to which deconvolved data were compared. Data were also collected with CC13 and Edge detectors for additional fields and energies on an Elekta Synergy, Varian Trilogy, and Siemens Oncor linear accelerator and response functions obtained. Response functions were compared as a function of depth, SSD, and detector scan direction. Variations in the shaping parameter were introduced and the effect on the resulting deconvolution profiles assessed. Results: Up to 10% setup dependence in the Gaussian shaping parameter occurred, for each detector for a particular plane. This translated to less than a ±0.7 mm variation in the 80%-20% penumbral width. For large volume ionization chambers such as the FC65 Farmer type, where the cavity length to diameter ratio is far from 1, the scan direction produced up to a 40% difference in the shaping parameter between in

1.34 µm picosecond self-mode-locked Nd:GdVO4 watt-level laser

Science.gov (United States)

Han, Ming; Peng, Jiying; Li, Zuohan; Cao, Qiuyuan; Yuan, Ruixia

2017-01-01

With a simple linear configuration, a diode-pumped, self-mode-locked Nd:GdVO4 laser at 1.34 µm is experimentally demonstrated for the first time. Based on the aberrationless theory of self-focusing and thermal lensing effect, through designing and optimizing the resonator, a pulse width as short as 9.1 ps is generated at a repetition rate of 2.0 GHz and the average output power is 2.51 W. The optical conversion efficiency and the slope efficiency for the stable mode-locked operation are approximately 16.7% and 19.2%, respectively.

Moderately converging ion and electron flows in two-dimensional diodes

International Nuclear Information System (INIS)

Cavenago, M.

2012-01-01

Flow of particles in diodes is solved selfconsistently assuming an approximated system of flow lines, that can be easily represented by an analytic transformation in a complex plane, with assumed uniformity in the third spatial direction. Beam current compression is tunable by an angle parameter α 0 ; transformed coordinate lines are circular arcs, exactly matching to the curved cathode usually considered by rectilinear converging flows. The curvature of flow lines allows to partly balance the transverse effect of space charge. A self-contained discussion of the whole theory is reported, ranging from analytical solution for selfconsistent potential to electrode drawing to precise numerical simulation, which serves as a verification and as an illustration of typical electrode shapes. Motion and Poisson equation are written in a curved flow line system and their approximate consistency is shown to imply an ordinary differential equation for the beam edge potential. Transformations of this equation and their series solutions are given and discussed, showing that beam edge potential has a maximum, so supporting both diode (with α 0 ≅π/3) and triode design. Numerical simulations confirm the consistency of these solution. Geometrical details of diode design are discussed: the condition of a zero divergence beam, with the necessary anode lens effect included, is written and solved, as a function of beam compression; accurate relations for diode parameters and perveance are given. Weakly relativistic effects including self-magnetic field are finally discussed as a refinement.

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

Directory of Open Access Journals (Sweden)

Wen-Chung Chang

2016-06-01

Full Text Available Vertically aligned p-type silicon nanowire (SiNW arrays were fabricated through metal-assisted chemical etching (MACE of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM, X-ray diffraction (XRD, and current−voltage (I−V measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

Diode pumped solid state laser by two diodes

International Nuclear Information System (INIS)

Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

1995-01-01

A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

Non linear self consistency of microtearing modes

International Nuclear Information System (INIS)

Garbet, X.; Mourgues, F.; Samain, A.

1987-01-01

The self consistency of a microtearing turbulence is studied in non linear regimes where the ergodicity of the flux lines determines the electron response. The current which sustains the magnetic perturbation via the Ampere law results from the combines action of the radial electric field in the frame where the island chains are static and of the thermal electron diamagnetism. Numerical calculations show that at usual values of β pol in Tokamaks the turbulence can create a diffusion coefficient of order ν th p 2 i where p i is the ion larmor radius and ν th the electron ion collision frequency. On the other hand, collisionless regimes involving special profiles of each mode near the resonant surface seem possible

Effective of diode laser on teeth enamel in the teeth whitening treatment

Science.gov (United States)

Klunboot, U.; Arayathanitkul, K.; Chitaree, R.; Emarat, N.

2011-12-01

This research purpose is to investigate the changing of teeth color and to study the surface of teeth after treatment by laser diode at different power densities for tooth whitening treatment. In the experiment, human-extracted teeth samples were divided into 7 groups of 6 teeth each. After that laser diode was irradiated to teeth, which were coated by 38% concentration of hydrogen peroxide, during for 20, 30 and 60 seconds at power densities of 10.9 and 52.1 W/cm2. The results of teeth color change were described by the CIEL*a*b* systems and the damage of teeth surface were investigated by scanning electron microscopy (SEM). The results showed that the power density of the laser diode could affect the whiteness of teeth. The high power density caused more luminous teeth than the low power density did, but on the other hand the high power density also caused damage to the teeth surface. Therefore, the laser diode at the low power densities has high efficiency for tooth whitening treatment and it has a potential for other clinical applications.

Linear perturbations of a self-similar solution of hydrodynamics with non-linear heat conduction

International Nuclear Information System (INIS)

Dubois-Boudesocque, Carine

2000-01-01

The stability of an ablative flow, where a shock wave is located upstream a thermal front, is of importance in inertial confinement fusion. The present model considers an exact self-similar solution to the hydrodynamic equations with non-linear heat conduction for a semi-infinite slab. For lack of an analytical solution, a high resolution numerical procedure is devised, which couples a finite difference method with a relaxation algorithm using a two-domain pseudo-spectral method. Stability of this solution is studied by introducing linear perturbation method within a Lagrangian-Eulerian framework. The initial and boundary value problem is solved by a splitting of the equations between a hyperbolic system and a parabolic equation. The boundary conditions of the hyperbolic system are treated, in the case of spectral methods, according to Thompson's approach. The parabolic equation is solved by an influence matrix method. These numerical procedures have been tested versus exact solutions. Considering a boundary heat flux perturbation, the space-time evolution of density, velocity and temperature are shown. (author) [fr

High Current Ionic Diode Using Homogeneously Charged Asymmetric Nanochannel Network Membrane.

Science.gov (United States)

Choi, Eunpyo; Wang, Cong; Chang, Gyu Tae; Park, Jungyul

2016-04-13

A high current ionic diode is achieved using an asymmetric nanochannel network membrane (NCNM) constructed by soft lithography and in situ self-assembly of nanoparticles with uniform surface charge. The asymmetric NCNM exhibits high rectified currents without losing a rectification ratio because of its ionic selectivity gradient and differentiated electrical conductance. Asymmetric ionic transport is analyzed with diode-like I-V curves and visualized via fluorescent dyes, which is closely correlated with ionic selectivity and ion distribution according to variation of NCNM geometries.

Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy; Caracterizacao das propriedades dosimetricas de diodos de silicio empregados em radioterapia com fotons

Energy Technology Data Exchange (ETDEWEB)

Bizetto, Cesar Augusto

2013-07-01

In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer KeithleyÒ 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens PrimusÒ linear accelerator), 6 and 15 MV (Novalis TXÒ) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens PrimusÒ the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TXÒ the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

Development on mini X-ray diode

International Nuclear Information System (INIS)

Jiang Shaoen; Sun Kexu; Peng Nengling; Huang Tianxuan; Cui Yanli; Yi Rongqing; Chen Jiusen

2004-01-01

The mini X-ray diode (M-XRD) was developed, and was used in mini soft X-ray spectrometer. Compared with traditional XRD, M-XRD's volume reduces to 1/30. M-XRD's property was experimentally examined on Shenguang II laser facility. The experimental results indicated that the temporal response and sensitivity of M-XRD are basically consistent with traditional XRD. The equivalent circuit of XRD was analyzed, and its response time and linear saturated current were calculated. (authors)

Characteristics of ITO electrode grown by linear facing target sputtering with ladder type magnetic arrangement for organic light emitting diodes

International Nuclear Information System (INIS)

Jeong, Jin-A; Kim, Han-Ki; Lee, Jae-Young; Lee, Jung-Hwan; Bae, Hyo-Dae; Tak, Yoon-Heung

2009-01-01

The preparation and characteristics of indium tin oxide (ITO) electrodes grown using a specially designed linear facing target sputtering (LFTS) system with a ladder type magnet arrangement for organic light emitting diodes (OLED) are described. It was found that the electrical and optical properties of the ITO electrode were critically dependent on the Ar/O 2 flow ratio, while its structural and surface properties remained fairly constant regardless of the Ar/O 2 flow ratio, due to the low substrate temperature during the plasma damage-free sputtering. Under the optimized conditions, we obtained an ITO electrode with the lowest sheet resistance of 39.4 Ω/sq and high transmittance of 90.1% (550 nm wavelength) at room temperature. This suggests that LFTS is a promising low temperature and plasma damage free sputtering technology for preparing high-quality ITO electrodes for OLEDs and flexible OLEDs at room temperature.

A line scanned light-sheet microscope with phase shaped self-reconstructing beams.

Science.gov (United States)

Fahrbach, Florian O; Rohrbach, Alexander

2010-11-08

We recently demonstrated that Microscopy with Self-Reconstructing Beams (MISERB) increases both image quality and penetration depth of illumination beams in strongly scattering media. Based on the concept of line scanned light-sheet microscopy, we present an add-on module to a standard inverted microscope using a scanned beam that is shaped in phase and amplitude by a spatial light modulator. We explain technical details of the setup as well as of the holograms for the creation, positioning and scaling of static light-sheets, Gaussian beams and Bessel beams. The comparison of images from identical sample areas illuminated by different beams allows a precise assessment of the interconnection between beam shape and image quality. The superior propagation ability of Bessel beams through inhomogeneous media is demonstrated by measurements on various scattering media.

Gamma radiation processing dosimetry with commercial silicon diodes

International Nuclear Information System (INIS)

Ferreira, Danilo Cardenuto

2009-01-01

This work envisages the development of dosimeters based on Si diodes for gamma radiation dosimetry from 1 Gy up to 100 Gy. This dose range is frequently utilized in radiation processing of crystal modifications, polymers crosslinking and biological studies carried out in the Radiation Technology Center at IPEN-CNEN/SP. The dosimeter was constructed by a commercial SFH00206 (Siemens) Si diode, operating in a photovoltaic mode, whose electrical characteristics are suitable for this application. The current generated in the device by the Cobalt-60 gamma radiation from the Irradiators types I and II was registered with a digital electrometer and stored during the exposure time. In all measurements, the current signals of the diode registered as a function of the exposure time were very stable. Furthermore, the device photocurrent was linearly dependent on the dose rate within a range of 6.1x10 -2 Gy/min up to 1.9x10 2 Gy/min. The calibration curves of the dosimeters, e.g., the average charge registered as a function of the absorbed dose were obtained by the integration of the current signals as a function of the exposure time. The results showed a linear response of the dosimeter with a correlation coefficient better than 0.998 for total absorbed dose up to 120 Gy. Finally, due to the small experimental errors 5 % it was also possible to measure the transit dose due to the movement of the Cobalto- 60 radioactive sources in irradiation facilities used in this work. (author)

Design of a self-focusing linear electron accelerator

International Nuclear Information System (INIS)

Hddab, S.

1983-06-01

In this report we tackle the principal physical and technical problems related to the design of a self-focusing linear electron accelerator. The study of the dynamic phenomena occurring at the entrance to the first resonant cell allows us, by an adequate choice of the longitudinal height of this cell, to avoid the use of an external magnetic focusing coil. Optimization of the ultra high frequency properties of the resonant structure has been achieved by polishing the internal surfaces of the cavities, by adapting a new brazing technique and optimizing the geometry of the cells. A simulation code has been adapted to an interactive use on microcomputer [fr

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

Energy Technology Data Exchange (ETDEWEB)

Yuryev, V. A., E-mail: vyuryev@kapella.gpi.ru; Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow 119991 (Russian Federation); Senkov, V. M. [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Avenue, Moscow 119991 (Russian Federation); Nalivaiko, O. Y. [JSC “Integral” – “Integral” Holding Management Company, 121A, Kazintsa I. P. Street, Minsk 220108 (Belarus); Novikau, A. G.; Gaiduk, P. I. [Belarusian State University, 4 Nezavisimosti Avenue, 220030 Minsk (Belarus)

2015-05-28

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.

Linear LIDAR versus Geiger-mode LIDAR: impact on data properties and data quality

Science.gov (United States)

Ullrich, A.; Pfennigbauer, M.

2016-05-01

LIDAR has become the inevitable technology to provide accurate 3D data fast and reliably even in adverse measurement situations and harsh environments. It provides highly accurate point clouds with a significant number of additional valuable attributes per point. LIDAR systems based on Geiger-mode avalanche photo diode arrays, also called single photon avalanche photo diode arrays, earlier employed for military applications, now seek to enter the commercial market of 3D data acquisition, advertising higher point acquisition speeds from longer ranges compared to conventional techniques. Publications pointing out the advantages of these new systems refer to the other category of LIDAR as "linear LIDAR", as the prime receiver element for detecting the laser echo pulses - avalanche photo diodes - are used in a linear mode of operation. We analyze the differences between the two LIDAR technologies and the fundamental differences in the data they provide. The limitations imposed by physics on both approaches to LIDAR are also addressed and advantages of linear LIDAR over the photon counting approach are discussed.

Analysis of self-organized In(Ga)As quantum structures with the scanning transmission electron microscope

International Nuclear Information System (INIS)

Sauerwald, Andres

2008-01-01

Aim of this thesis was to apply the analytical methods of the scanning transmission electron microscopy to the study of self-organized In(Ga)As quantum structures. With the imaging methods Z contrast and bright field (position resolutions in the subnanometer range) and especially with the possibilities of the quantitative chemical EELS analysis of the scanning transmission electron microscope (STEM) fundamental questions concerning morphology and chemical properties of self-organized quantum structures should be answered. By the high position resolution of the STEM among others essentail morphological and structural parameters in the growth behaviour of ''dot in a well'' (DWell) structures and of vertically correlated quantum dots (QDs) could be analyzed. For the optimization of DWell structures samples were studied, the nominal InAs-QD growth position was directedly varied within the embedding InGaAs quantum wells. The STEM offers in connection with the EELS method a large potential for the chemical analysis of quantum structures. Studied was a sample series of self-organized InGaAs/GaAs structures on GaAs substrate, the stress of which was changed by varying the Ga content of the INGaAs material between 2.4 % and 4.3 % [de

Diode-side-pumped continuous wave Nd³⁺ : YVO₄ self-Raman laser at 1176 nm.

Science.gov (United States)

Kores, Cristine Calil; Jakutis-Neto, Jonas; Geskus, Dimitri; Pask, Helen M; Wetter, Niklaus U

2015-08-01

Here we report, to the best of our knowledge, the first diode-side-pumped continuous wave (cw) Nd3+:YVO4 self-Raman laser operating at 1176 nm. The compact cavity design is based on the total internal reflection of the laser beam at the pumped side of the Nd3+:YVO4 crystal. Configurations with a single bounce and a double bounce of the laser beam at the pumped faced have been characterized, providing a quasi-cw peak output power of more than 8 W (multimode) with an optical conversion efficiency of 11.5% and 3.7 W (TEM00) having an optical conversion efficiency of 5.4%, respectively. Cw output power of 1.8 W has been demonstrated.

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface.

Science.gov (United States)

Lenfant, S; Guerin, D; Tran Van, F; Chevrot, C; Palacin, S; Bourgoin, J P; Bouloussa, O; Rondelez, F; Vuillaume, D

2006-07-20

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices, and we examine the extent to which the nature of the pi end group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. Self-assembled monolayers of alkyl chains (different chain lengths from 6 to 15 methylene groups) functionalized by phenyl, anthracene, pyrene, ethylene dioxythiophene, ethylene dioxyphenyl, thiophene, terthiophene, and quaterthiophene were synthesized and characterized by contact angle measurements, ellipsometry, Fourier transform infrared spectroscopy, and atomic force microscopy. We demonstrate that reasonably well-packed monolayers are obtained in all cases. Their electrical properties were assessed by dc current-voltage characteristics and high-frequency (1-MHz) capacitance measurements. For all of the pi groups investigated here, we observed rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (Lenfant et al., Nano Lett. 2003, 3, 741). The experimental current-voltage curves were analyzed with a simple analytical model, from which we extracted the energy position of the molecular orbital of the pi group in resonance with the Fermi energy of the electrodes. We report experimental studies of the band lineup in these silicon/alkyl pi-conjugated molecule/metal junctions. We conclude that Fermi-level pinning at the pi group/metal interface is mainly responsible for the observed absence of a dependence of the rectification effect on the nature of the pi groups, even though the groups examined were selected to have significant variations in their electronic molecular orbitals.

Hybrid simulation of electrode plasmas in high-power diodes

International Nuclear Information System (INIS)

Welch, Dale R.; Rose, David V.; Bruner, Nichelle; Clark, Robert E.; Oliver, Bryan V.; Hahn, Kelly D.; Johnston, Mark D.

2009-01-01

New numerical techniques for simulating the formation and evolution of cathode and anode plasmas have been successfully implemented in a hybrid code. The dynamics of expanding electrode plasmas has long been recognized as a limiting factor in the impedance lifetimes of high-power vacuum diodes and magnetically insulated transmission lines. Realistic modeling of such plasmas is being pursued to aid in understanding the operating characteristics of these devices as well as establishing scaling relations for reliable extrapolation to higher voltages. Here, in addition to kinetic and fluid modeling, a hybrid particle-in-cell technique is described that models high density, thermal plasmas as an inertial fluid which transitions to kinetic electron or ion macroparticles above a prescribed energy. The hybrid technique is computationally efficient and does not require resolution of the Debye length. These techniques are first tested on a simple planar diode then applied to the evolution of both cathode and anode plasmas in a high-power self-magnetic pinch diode. The impact of an intense electron flux on the anode surface leads to rapid heating of contaminant material and diode impedance loss.

Scanning probe microscope simulator for the assessment of noise in scanning probe microscopy controllers

International Nuclear Information System (INIS)

Wutscher, T.; Niebauer, J.; Giessibl, F. J.

2013-01-01

We present an electronic circuit that allows to calibrate and troubleshoot scanning probe microscopy (SPM) controllers with respect to their noise performance. The control signal in an SPM is typically highly nonlinear—the tunneling current in scanning tunneling microscopy (STM) varies exponentially with distance. The exponential current-versus-voltage characteristics of diodes allow to model the current dependence in STM. Additional inputs allow to simulate the effects of external perturbations and the reactions of the control electronics. We characterized the noise performance of the feedback controller using the apparent topography roughness of recorded images. For a comparison of different STM controllers, an optimal gain parameter was determined by exploring settling times through a rectangular perturbation signal. We used the circuit to directly compare the performance of two types of SPM controllers used in our laboratory

Fiber-based all-solid-state flexible supercapacitors for self-powered systems.

Science.gov (United States)

Xiao, Xu; Li, Tianqi; Yang, Peihua; Gao, Yuan; Jin, Huanyu; Ni, Weijian; Zhan, Wenhui; Zhang, Xianghui; Cao, Yuanzhi; Zhong, Junwen; Gong, Li; Yen, Wen-Chun; Mai, Wenjie; Chen, Jian; Huo, Kaifu; Chueh, Yu-Lun; Wang, Zhong Lin; Zhou, Jun

2012-10-23

All-solid-state flexible supercapacitors based on a carbon/MnO(2) (C/M) core-shell fiber structure were fabricated with high electrochemical performance such as high rate capability with a scan rate up to 20 V s(-1), high volume capacitance of 2.5 F cm(-3), and an energy density of 2.2 × 10(-4) Wh cm(-3). By integrating with a triboelectric generator, supercapacitors could be charged and power commercial electronic devices, such as a liquid crystal display or a light-emitting-diode, demonstrating feasibility as an efficient storage component and self-powered micro/nanosystems.

Coaxial foilless diode

OpenAIRE

Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

2014-01-01

A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

How to use body tilt for the simulation of linear self motion

NARCIS (Netherlands)

Groen, E.L.; Bles, W.

2004-01-01

We examined to what extent body tilt may augment the perception of visually simulated linear self acceleration. Fourteen subjects judged visual motion profiles of fore-aft motion at four different frequencies between 0.04-0.33 Hz, and at three different acceleration amplitudes (0.44, 0.88 and 1.76

Density Transition Based Self-Focusing of cosh-Gaussian Laser Beam in Plasma with Linear Absorption

International Nuclear Information System (INIS)

Kant, Niti; Wani, Manzoor Ahmad

2015-01-01

Density transition based self-focusing of cosh-Gaussian laser beam in plasma with linear absorption has been studied. The field distribution in the plasma is expressed in terms of beam width parameter, decentered parameter, and linear absorption coefficient. The differential equation for the beam width parameter is solved by following Wentzel–Kramers–Brillouin (WKB) and paraxial approximation through parabolic wave equation approach. The behaviour of beam width parameter with dimensionless distance of propagation is studied at optimum values of plasma density, decentered parameter and with different absorption levels in the medium. The results reveal that these parameters can affect the self-focusing significantly. (paper)

Diagnostic X-Ray dosimeters using standard Float Zone (FZ) and XRA-50 commercial diodes

Energy Technology Data Exchange (ETDEWEB)

Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: josemary@ipen.br, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN-CNEN/SP), São Paulo, SP (Brazil); Barros, Vinicius S.M.; Asfora, Viviane K.; Khoury, Helen J., E-mail: vsmdbarros@gmail.com, E-mail: vikhoury@gmail.com, E-mail: hjkhoury@gmail.com [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Departamento de Física

2017-07-01

The results obtained with a standard float zone (FZ) silicon diode, processed at the Helsinki Institute of Physics, used as on-line diagnostic X-ray dosimeter are described in this work. The device was connected in the short circuit current mode to the input of an integrating electrometer. The response repeatability and the current sensitivity coefficient of the diode were measured with diagnostic X-ray beams in the range of 40-80 kV. The dose-response of the device, evaluated from 10 mGy up to 500 mGy, was linear with high charge sensitivity. Nevertheless, significant energy dependence was observed in the charge sensitivity of FZ device for energies below 70 kV. The dosimetric characteristics of this FZ diode were compared to those of an XRA-50 commercial Si diode, specially designed to X-ray dosimetry. The results obtained with the FZ diode evidenced that it can be an alternative choice for diagnostic X-ray dosimetry, although it needs to be calibrated for individual X-ray beam energies. The studies of long-term stability and the radiation hardness of these diodes are under way. (author)

Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy; Caracterizacao das propriedades dosimetricas de diodos de silicio empregados em radioterapia com feixe de fotons

Energy Technology Data Exchange (ETDEWEB)

Bizetto, Cesar Augusto

2013-07-01

In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer Keithley Registered-Sign 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens Primus Registered-Sign linear accelerator), 6 and 15 MV (Novalis TX Registered-Sign ) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens Primus the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TX Registered-Sign the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

A Riccati Based Homogeneous and Self-Dual Interior-Point Method for Linear Economic Model Predictive Control

DEFF Research Database (Denmark)

Sokoler, Leo Emil; Frison, Gianluca; Edlund, Kristian

2013-01-01

In this paper, we develop an efficient interior-point method (IPM) for the linear programs arising in economic model predictive control of linear systems. The novelty of our algorithm is that it combines a homogeneous and self-dual model, and a specialized Riccati iteration procedure. We test...

Exact solutions of linearized Schwinger endash Dyson equation of fermion self-energy

International Nuclear Information System (INIS)

Zhou, B.

1997-01-01

The Schwinger endash Dyson equation of fermion self-energy in the linearization approximation is solved exactly in a theory with gauge and effective four-fermion interactions. Different expressions for the independent solutions, which, respectively, submit to irregular and regular ultraviolet boundary condition are derived and expounded. copyright 1997 American Institute of Physics

Stochastic quantum inflation for a canonical scalar field with linear self-interaction potential

Energy Technology Data Exchange (ETDEWEB)

Panotopoulos, Grigoris [CENTRA, Instituto Superior Tecnico, Universidade de Lisboa, Lisboa (Portugal)

2017-10-15

We apply Starobinsky's formalism of stochastic inflation to the case of a massless minimally coupled scalar field with linear self-interaction potential. We solve the corresponding Fokker-Planck equation exactly, and we obtain analytical expressions for the stochastic expectation values. (orig.)

Transport characteristics in Au/pentacene/Au diodes

Science.gov (United States)

Hayashi, Toshiaki; Naka, Akiyoshi; Hiroki, Masanobu; Yokota, Tomoyuki; Someya, Takao; Fujiwara, Akira

2018-03-01

We have used scanning and transmission electron microscopes (SEM and TEM) to study the structure of a pentacene thin film grown on a Au layer with and shown that it consists of randomly oriented amorphous pentacene clusters. We have also investigated the transport properties of amorphous pentacene in a metal-semiconductor-metal (MSM) diode structure and shown that the current is logarithmically proportional to the square root of the applied voltage, which indicates that transport occurs as the result of hopping between localized sites randomly distributed in space and energy.

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

Science.gov (United States)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.

Oxygen measurement by multimode diode lasers employing gas correlation spectroscopy.

Science.gov (United States)

Lou, Xiutao; Somesfalean, Gabriel; Chen, Bin; Zhang, Zhiguo

2009-02-10

Multimode diode laser (MDL)-based correlation spectroscopy (COSPEC) was used to measure oxygen in ambient air, thereby employing a diode laser (DL) having an emission spectrum that overlaps the oxygen absorption lines of the A band. A sensitivity of 700 ppm m was achieved with good accuracy (2%) and linearity (R(2)=0.999). For comparison, measurements of ambient oxygen were also performed by tunable DL absorption spectroscopy (TDLAS) technique employing a vertical cavity surface emitting laser. We demonstrate that, despite slightly degraded sensitivity, the MDL-based COSPEC-based oxygen sensor has the advantages of high stability, low cost, ease-of-use, and relaxed requirements in component selection and instrument buildup compared with the TDLAS-based instrument.

Analysis of diodes used as precision power detectors above the square law region

DEFF Research Database (Denmark)

Guldbrandsen, Tom

1990-01-01

The deviation from square law found in diode power detectors at moderate power levels has been modeled for a general system consisting of a number of diode detectors connected to a common arbitrary linear passive network, containing an approximately sinusoidal source. This situation covers the case...... if an extra-set of measurements is made in situ. For precision measurements the maximum power level can be increased by about 10 dB. The dynamic range can thus be increased sufficiently to enable fast measurements to be made with an accuracy of 10-3 dB...

A real time analysis of the self-assembly process using thermal analysis inside the differential scanning calorimeter instrument.

Science.gov (United States)

Roy, Debmalya; Shastri, Babita; Mukhopadhyay, K

2012-07-12

The supramolecular assembly of the regioregular poly-3-hexylthiophene (rr-P3HT) in solution has been investigated thoroughly in the past. In the current study, our focus is on the enthalpy of nanofiber formation using thermal analysis techniques by performing the self-assembly process inside the differential scanning calorimetry (DSC) instrument. Thermogravimetric analysis (TGA) was carried out to check the concentration of the solvent during the self-assembly process of P3HT in p-xylene. Ultraviolet visible (UV-vis) spectophotometric technique, small-angle X-ray scattering (SAXS) experiment, atomic force microscopic (AFM), and scanning electron microscopic (SEM) images were used to characterize the different experimental yields generated by cooling the reaction mixture at desired temperatures. Comparison of the morphologies of self-assembled products at different fiber formation temperatures gives us an idea about the possible crystallization parameters which could affect the P3HT nanofiber morphology.

An environmental scan of policies in support of chronic disease self-management in Canada.

Science.gov (United States)

Liddy, C; Mill, K

2014-02-01

The evidence supporting chronic disease self-management warrants further attention. Our aim was to identify existing policies, strategies and frameworks that support self-management initiatives. This descriptive study was conducted as an environmental scan, consisting of an Internet search of government and other publicly available websites, and interviews with jurisdictional representatives identified through the Health Council of Canada and academic networking. We interviewed 16 representatives from all provinces and territories in Canada and found 30 publicly available and relevant provincial and national documents. Most provinces and territories have policies that incorporate aspects of chronic disease self-management. Alberta and British Columbia have the most detailed policies. Both feature primary care prominently and are not disease specific. Both also have provincial level implementation of chronic disease self-management programming. Canada's northern territories all lacked specific policies supporting chronic disease self-management despite a significant burden of disease. Engaging patients in self-management of their chronic diseases is important and effective. Although most provinces and territories have policies that incorporate aspects of chronic disease self-management, they were often embedded within other initiatives and/or policy documents framed around specific diseases or populations. This approach could limit the potential reach and effect of self-management.

Semiconductor-diode-aided dosimetry of the irradiation of pourable bulk material

International Nuclear Information System (INIS)

Gruenewald, T.; Rudolf, M.

1987-01-01

The irradiation of unpackaged pourable bulk material requires the employment of a dosimeter which can be readily transported along with the material. Planar diffused silicon diodes have been found to be suitable for this purpose. To date these have been used solely for the purpose of dose rate measurements; however, it can be shown that the permanent change in reverse recover time at the p-n junction correlates with the absorbed irradiation dose in the range up to 10 kGy. Appropriate selection of the diode and thermal treatment lead to a linear dependence and enable the silicon dosimeter to be reused. (author). 16 refs, 4 figs

Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Biber, M

2003-01-01

The current-voltage (I-V) characteristics of metal-insulating layer-semiconductor Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky barrier diodes were determined in the temperature range 80-300 K. The evaluation of the experimental I-V data reveals a nonlinear increase of the zero-bias barrier height (qPHI{sub 0}) for the inhomogeneous Cu/n-GaAs Schottky barrier diodes and a linear increase of the zero-bias barrier height (qPHI{sub 0}) for Cu/n-GaAs Schottky barrier diodes with an interfacial layer. The ideality factor n decreases with increasing temperature for all diodes. Furthermore, the changes in PHI{sub 0} and n become quite significant below 150 K and the plot of ln(I{sub 0}/T{sup 2}) versus 1/T exhibits a non-linearity below 180 K for the inhomogeneous barrier diodes. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. The value of the Richardson constant was found to be 5.033 A/cm{sup 2} K{sup 2}, which is close to the theoretical value of 8.16 A/cm{sup 2} K{sup 2} used for the determination of the zero-bias barrier height.

Reliability and validity of a self-administered tool for online neuropsychological testing : The Amsterdam Cognition Scan

NARCIS (Netherlands)

Feenstra, H.E.M.; Murre, J.M.J.; Vermeulen, I. E.; Kieffer, J.M.; Schagen, S.B.

2018-01-01

Introduction : To facilitate large-scale assessment of a variety of cognitive abilities in clinical studies, we developed a self-administered online neuropsychological test battery: the Amsterdam Cognition Scan (ACS). The current studies evaluate in a group of adult cancer patients: test–retest

Reliability and validity of a self-administered tool for online neuropsychological testing : The Amsterdam Cognition Scan

NARCIS (Netherlands)

Feenstra, Heleen E.M.; Murre, Jaap M.J.; Vermeulen, Ivar E.; Kieffer, Jacobien M.; Schagen, Sanne B.

2018-01-01

Introduction: To facilitate large-scale assessment of a variety of cognitive abilities in clinical studies, we developed a self-administered online neuropsychological test battery: the Amsterdam Cognition Scan (ACS). The current studies evaluate in a group of adult cancer patients: test–retest

Coaxial foilless diode

Energy Technology Data Exchange (ETDEWEB)

Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

2014-05-15

A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

Self-oscillations of aircraft landing gear shock-strut at considerable non-linear friction

Directory of Open Access Journals (Sweden)

Б.М. Шифрин

2004-01-01

Full Text Available  The report considers self-oscillations at ε >1. The previous works were dedicated to the elastic frictional L.G. shock strut oscillations, the mathematical model of which is a non-linear differential equation with low ε parameter of its right-hand part.

Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

Science.gov (United States)

Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H

2014-07-21

Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

Development and optimization of a diode laser for photodynamic therapy.

Science.gov (United States)

Lim, Hyun Soo

2011-01-01

This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes.

Stable CW Single Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

Science.gov (United States)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by tWo methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback'. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

Use of FET in automatic scanning of measurements using thermocouples and self-powered neutron detectors

International Nuclear Information System (INIS)

Plaige, Yves.

1977-01-01

Advantages lying in using FET switches in the relays of multiplexing systems are shown with two examples of application. Their performance as regard fast reliable operation are used in temperature measurement scanning inside nuclear reactors. As for current measurements using self-powered neutron detectors, the weak leakage currents of said switches ( [fr

In Vitro Study of Dentin Hypersensitivity Treated by 980-nm Diode Laser.

Science.gov (United States)

Liu, Ying; Gao, Jie; Gao, Yan; Xu, Shuaimei; Zhan, Xueling; Wu, Buling

2013-01-01

To investigate the ultrastructural changes of dentin irradiated with 980-nm diode laser under different parameters and to observe the morphological alterations of odontoblasts and pulp tissue to determine the safety parameters of 980-nm diode laser in the treatment of dentin hypersensitivity (DH). Twenty extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into four areas and was irradiated by 980-nm diode laser under different parameters: Group A: control group, 0 J/cm(2); Group B: 2 W/CW (continuous mode), 166 J/cm(2); Group C: 3W/CW, 250 J/cm(2); and Group D: 4W/CW, 333 J/cm(2). Ten additional extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into two areas and was irradiated by 980-nm diode laser: Group E: control group, 0 J/cm(2); and Group F: 2.0 W/CW, 166 J/cm(2). The morphological alterations of the dentin surfaces and odontoblasts were examined with scanning electron microscopy (SEM), and the morphological alterations of the dental pulp tissue irradiated by laser were observed with an upright microscope. The study demonstrated that dentinal tubules can be entirely blocked after irradiation by 980-nm diode laser, regardless of the parameter setting. Diode laser with settings of 2.0 W and 980-nm sealed exposed dentin tubules effectively, and no significant morphological alterations of the pulp and odontoblasts were observed after irradiation. Irradiation with 980-nm diode laser could be effective for routine clinical treatment of DH, and 2.0W/CW (166 J/cm(2)) was a suitable energy parameter due to its rapid sealing of the exposed dentin tubules and its safety to the odontoblasts and pulp tissue.

In Vitro Study of Dentin Hypersensitivity Treated by 980-nm Diode Laser

Science.gov (United States)

Liu, Ying; Gao, Jie; Gao, Yan; XU, Shuaimei; Zhan, Xueling; Wu, Buling

2013-01-01

Introduction: To investigate the ultrastructural changes of dentin irradiated with 980-nm diode laser under different parameters and to observe the morphological alterations of odontoblasts and pulp tissue to determine the safety parameters of 980-nm diode laser in the treatment of dentin hypersensitivity (DH). Methods: Twenty extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into four areas and was irradiated by 980-nm diode laser under different parameters: Group A: control group, 0 J/cm2; Group B: 2 W/CW (continuous mode), 166 J/cm2; Group C: 3W/CW, 250 J/cm2; and Group D: 4W/CW, 333 J/cm2. Ten additional extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into two areas and was irradiated by 980-nm diode laser: Group E: control group, 0 J/cm2; and Group F: 2.0 W/CW, 166 J/cm2. The morphological alterations of the dentin surfaces and odontoblasts were examined with scanning electron microscopy (SEM), and the morphological alterations of the dental pulp tissue irradiated by laser were observed with an upright microscope. Results: The study demonstrated that dentinal tubules can be entirely blocked after irradiation by 980-nm diode laser, regardless of the parameter setting. Diode laser with settings of 2.0 W and 980-nm sealed exposed dentin tubules effectively, and no significant morphological alterations of the pulp and odontoblasts were observed after irradiation. Conclusions: Irradiation with 980-nm diode laser could be effective for routine clinical treatment of DH, and 2.0W/CW (166 J/cm2) was a suitable energy parameter due to its rapid sealing of the exposed dentin tubules and its safety to the odontoblasts and pulp tissue. PMID:25606318

Diode-pumped Alexandrite laser with passive SESAM Q-switching and wavelength tunability

Science.gov (United States)

Parali, Ufuk; Sheng, Xin; Minassian, Ara; Tawy, Goronwy; Sathian, Juna; Thomas, Gabrielle M.; Damzen, Michael J.

2018-03-01

We report the first experimental demonstration of a wavelength tunable passively Q-switched red-diode-end pumped Alexandrite laser using a semiconductor saturable absorber mirror (SESAM). We present the results of the study of passive SESAM Q-switching and wavelength-tuning in continuous diode-pumped Alexandrite lasers in both linear cavity and X-cavity configurations. In the linear cavity configuration, pulsed operation up to 27 kHz repetition rate in fundamental TEM00 mode was achieved and maximum average power was 41 mW. The shortest pulse generated was 550 ns (FWHM) and the Q-switched wavelength tuning band spanned was between 740 nm and 755 nm. In the X-cavity configuration, a higher average power up to 73 mW, and obtained with higher pulse energy 6 . 5 μJ at 11.2 kHz repetition rate, in fundamental TEM00 mode with excellent spatial quality M2 < 1 . 1. The Q-switched wavelength tuning band spanned was between 775 nm and 781 nm.

Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

Science.gov (United States)

Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

2018-01-01

We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

Electron beam diodes using ferroelectric cathodes

International Nuclear Information System (INIS)

Ivers, J.D.; Schaechter, L.; Nation, J.A.; Kerslick, G.S.

1993-01-01

A new high current density electron source is investigated. The source consists of a polarized ceramic disk with aluminum electrodes coated on both faces. The front electrode is etched in a periodic grid to expose the ceramic beneath. A rapid change in the polarization state of the ceramic results in the emission of a high density electron cloud into a 1 to 10mm diode gap. The anode potential is maintained by a charged transmission line. Some of the emitted electrons traverse the gap and an electron current flows. The emitted electron current has been measured as a function of the gap spacing and the anode potential. Current densities in excess of 70 A/cm 2 have been measured. The current is found to vary linearly with the anode voltage for gaps < 10 mm, and exceeds the Child-Langmuir current by at least two orders of magnitude. The experimental data will be compared with predictions from a model based on the emission of a cloud of electrons from the ferroelectric which in turn reflex in the diode gap

Coaxial foilless diode

Directory of Open Access Journals (Sweden)

Long Kong

2014-05-01

Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

Evaluation of 1024 channel VUV-photo-diodes for soft x-ray diagnostic applications

International Nuclear Information System (INIS)

Molvik, A.W.

1997-01-01

We tested the operation of 1024 channel diode arrays (Model AXUV-1024, from IRD, Inc.) in subdued room light to establish that they worked and to determine the direction and speed of the scan of the 1024 channels. Further tests were performed in vacuum in the HAP, High-Average-Power Facility. There we found that the bare or glass covered diodes detected primarily visible light as expected, but diodes filtered by aluminized parylene, produced a signal consistent with soft x-rays. It is probable that the spectral response and sensitivity, as discussed below, reproduce that previously demonstrated by 1 to 16 channel VUV-photodiodes; however, significantly more effort would be required to establish that experimentally. These detectors appear to be worth further evaluation where 25 w spatial resolution bolometers or spectrograph detectors of known sensitivity are required, and single-shot or 0.02-0.2s time response is adequate. (Presumably, faster readout would be available with custom drive circuitry.)

Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique

Science.gov (United States)

Kim, Younghyun; Sung, Yunsu; Yang, Jung-Tack; Choi, Woo-Young

2018-02-01

The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

Diode laser welding of aluminum to steel

International Nuclear Information System (INIS)

Santo, Loredana; Quadrini, Fabrizio; Trovalusci, Federica

2011-01-01

Laser welding of dissimilar materials was carried out by using a high power diode laser to join aluminum to steel in a butt-joint configuration. During testing, the laser scan rate was changed as well as the laser power: at low values of fluence (i.e. the ratio between laser power and scan rate), poor joining was observed; instead at high values of fluence, an excess in the material melting affected the joint integrity. Between these limiting values, a good aesthetics was obtained; further investigations were carried out by means of tensile tests and SEM analyses. Unfortunately, a brittle behavior was observed for all the joints and a maximum rupture stress about 40 MPa was measured. Apart from the formation of intermeltallic phases, poor mechanical performances also depended on the chosen joining configuration, particularly because of the thickness reduction of the seam in comparison with the base material.

Gaas Displacement Damage Dosimeter Based on Diode Dark Currents

Directory of Open Access Journals (Sweden)

Warner Jeffrey H.

2017-01-01

Full Text Available GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD. The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellent candidate for a displacement damage dosimeter. Additional proton testing performed in situ enabled error estimate determination to within 10% for simulated space use.

Evolution of diffraction and self-diffraction phenomena in thin films of Gelite Bloom/Hibiscus Sabdariffa

Science.gov (United States)

Cano-Lara, Miroslava; Severiano-Carrillo, Israel; Trejo-Durán, Mónica; Alvarado-Méndez, Edgar

2017-09-01

In this work, we present a study of non-linear optical response in thin films elaborated with Gelite Bloom and extract of Hibiscus Sabdariffa. Non-linear refraction and absorption effects were studied experimentally (Z-scan technique) and numerically, by considering the transmittance as non-linear absorption and refraction contribution. We observe large phase shifts to far field, and diffraction due to self-phase modulation of the sample. Diffraction and self-diffraction effects were observed as time function. The aim of studying non-linear optical properties in thin films is to eliminate thermal vortex effects that occur in liquids. This is desirable in applications such as non-linear phase contrast, optical limiting, optics switches, etc. Finally, we find good agreement between experimental and theoretical results.

Simulations about self-absorption of tritium in titanium tritide and the energy deposition in a silicon Schottky barrier diode

International Nuclear Information System (INIS)

Li, Hao; Liu, Yebing; Hu, Rui; Yang, Yuqing; Wang, Guanquan; Zhong, Zhengkun; Luo, Shunzhong

2012-01-01

Simulations on the self-absorption of tritium electrons in titanium tritide films and the energy deposition in a silicon Schottky barrier diode are carried out using the Geant4 radiation transport toolkit. Energy consumed in each part of the Schottky radiovoltaic battery is simulated to give a clue about how to make the battery work better. The power and energy-conversion efficiency of the tritium silicon Schottky radiovoltaic battery in an optimized design are simulated. Good consistency with experiments is obtained. - Highlights: ► Simulation of the energy conversion inside the radiovoltaic battery is carried out. ► Energy-conversion efficiency in the simulation shows good consistency with experimental result. ► Inadequacy of the present configuration is studied in this work and improvements are proposed.

Operation of passive wax flashover and LiF ion sources on extraction applied-B ion diodes on SABRE

International Nuclear Information System (INIS)

Cuneo, M.E.; Hanson, D.L.; Smith, J.R.; Rosenthal, S.E.; Coats, R.S.; Bernard, M.A.

1993-01-01

The authors are fielding wax flashover and LiF anodes on an extraction ion diode on SABRE (Sandia Accelerator and Beam Research Experiment), a magnetically insulated linear induction voltage adder, presently providing a 6 MV, 300 kA output. These anodes are passive sources of principally hydrocarbon and lithium beams. In applied-B ion diodes, passive ion sources use the applied voltage to produce the required ions either through an electron assisted desorption and surface flashover process, and/or through field emission mechanisms. Passive sources therefore require power delivered to the diode before ions will be turned-on. Passive sources provide a simple way to generate ions to test accelerator performance, accelerator to diode coupling, diagnostics, and to study sources of divergence and divergence reduction techniques. The authors will discuss the effect of magnetic field geometry and the important role of cathode feed electrons in the formation and evolution of the A-K gap electron sheath in the diode. Experimental data on diode operation and beam production will be compared to the predictions of PIC code simulations

Temperature-controlled transfer and self-wiring for multi-color light-emitting diode arrays

International Nuclear Information System (INIS)

Onoe, Hiroaki; Nakai, Akihito; Iwase, Eiji; Matsumoto, Kiyoshi; Shimoyama, Isao

2009-01-01

We propose an integration method for arranging light-emitting diode (LED) bare chips on a flexible substrate for multi-color inorganic LED displays. The LED bare chips (240 µm × 240 µm × 75 µm), which were diced on an adhesive sheet by the manufacturer, were transferred to a flexible polyimide substrate by our temperature-controlled transfer (TCT) and self-wiring (SW) processes. In these processes, low-melting point solder (LMPS) and poly-(ethylene glycol) (PEG) worked as adhesive layers for the LED chips during the TCT processes, and the adhesion force of the LMPS and PEG layers was controlled by changing the temperature to melt and solidify the layers. After the TCT processes, electrical connection between the transferred LED chips and the flexible substrate was automatically established via the SW process, by using the surface tension of the melted LMPS. This TCT/SW method enabled us to (i) handle arrays of commercially available bare chips, (ii) arrange multiple types of chips on the circuit substrate by simply repeating the TCT processes and (iii) establish electrical connection between the chips and the substrate automatically. Applying this transfer printing and wiring method, we experimentally demonstrated a 5-by-5 flexible LED array and a two-color (blue and green) LED array

Non self-similar collapses described by the non-linear Schroedinger equation

International Nuclear Information System (INIS)

Berge, L.; Pesme, D.

1992-01-01

We develop a rapid method in order to find the contraction rates of the radially symmetric collapsing solutions of the nonlinear Schroedinger equation defined for space dimensions exceeding a threshold value. We explicitly determine the asymptotic behaviour of these latter solutions by solving the non stationary linear problem relative to the nonlinear Schroedinger equation. We show that the self-similar states associated with the collapsing solutions are characterized by a spatial extent which is bounded from the top by a cut-off radius

Acceptance test for the linear motion actuator for the scanning slit of the HIE-ISOLDE short diagnostic boxes

CERN Document Server

Cantero, E D; Bravin, E; Sosa, A

2014-01-01

We performed experimental tests to characterize the mechanical accuracy of a linear actuator designed by the company AVS for the movement of the scanning slit of the HIE-ISOLDE short diagnostic boxes. The mechanism consists of a linear actuator composed of two guiding rods and a lead screw, with a full stroke of 135 mm. A specially designed blade was mounted on the actuator and the transverse positioning of the blade was monitored with a camera-based optical system while moving the actuator at speeds of up to 10 mm/s. The repeatability of the positioning of the blade after several cycles around predefined positions was also measured. The results of the measurements and a general inspection of the device show that the proposed solution fulfils the specifications. A full prototype of short diagnostic box for the HIE-ISOLDE project can now be built for testing.

Two-wavelength, passive self-injection-controlled operation of diode-pumped cw Yb-doped crystal lasers.

Science.gov (United States)

Louyer, Yann; Wallerand, Jean-Pierre; Himbert, Marc; Deneva, Margarita; Nenchev, Marin

2003-09-20

We demonstrate and investigate a peculiar mode of cw Yb3+-doped crystal laser operation when two emissions, at two independently tunable wavelengths, are simultaneously produced. Both emissions are generated from a single pumped volume and take place in either a single beam or spatially separated beams. The laser employs original two-channel cavities that use a passive self-injection-locking (PSIL) control to reduce intracavity loss. The advantages of the application of the PSIL technique and some limitations are shown. The conditions for two-wavelength multimode operation of the cw quasi-three-level diode-pumped Yb3+ lasers and the peculiarity of such an operation are carried out both theoretically and experimentally. The results reported are based on the example of a Yb3+:GGG laser but similar results are also obtained with a Yb3+:YAG laser. The laser operates in the 1023-1033-nm (1030-1040-nm) range with a total output power of 0.4 W. A two-wavelength, single longitudinal mode generation is also obtained.

Linear coupling of electromagnetic and Jeans modes in self-gravitating plasma streams

International Nuclear Information System (INIS)

Yaroshenko, Victoria V.; Voitenko, Yuriy; Goossens, Marcel

2002-01-01

A new mechanism of linear coupling between electromagnetic (nonpotential) and gravitational disturbances is found for oblique propagation relatively to particle streams. The general dispersion law is derived and applied to the case of two countersteaming dust beams of equal strength and quiasiperpendicular propagation. It reveals a strong linear coupling between the low-frequency aperiodically unstable electromagnetic (AEM) and the Jeans (JM) modes. The coupling is of a mode conversion type, resulting in a frequency gap in the dispersion, and thus significantly modifies the instability criteria. It is shown that, in contrast to the electrostatic case, AEM and JM coupling in streaming self-gravitating plasmas can actually appear even if the plasma frequencies of the dust species greatly exceed the corresponding Jeans frequencies

Influence of the helium-pressure on diode-pumped alkali-vapor laser

Science.gov (United States)

Gao, Fei; Chen, Fei; Xie, Ji-jiang; Zhang, Lai-ming; Li, Dian-jun; Yang, Gui-long; Guo, Jing

2013-05-01

Diode-pumped alkali-vapor laser (DPAL) is a kind of laser attracted much attention for its merits, such as high quantum efficiency, excellent beam quality, favorable thermal management, and potential scalability to high power and so on. Based on the rate-equation theory of end-pumped DPAL, the performances of DPAL using Cs-vapor collisionally broadened by helium are simulated and studied. With the increase of helium pressure, the numerical results show that: 1) the absorption line-width increases and the stimulated absorption cross-section decreases contrarily; 2) the threshold pumping power decreases to minimum and then rolls over to increase linearly; 3) the absorption efficiency rises to maximum initially due to enough large stimulated absorption cross-section in the far wings of collisionally broadened D2 transition (absorption transition), and then begins to reduce; 4) an optimal value of helium pressure exists to obtain the highest output power, leading to an optimal optical-optical efficiency. Furthermore, to generate the self-oscillation of laser, a critical value of helium pressure occurs when small-signal gain equals to the threshold gain.

The Role of Digital 3D Scanned Models in Dental Students' Self-Assessments in Preclinical Operative Dentistry.

Science.gov (United States)

Lee, Cliff; Kobayashi, Hiro; Lee, Samuel R; Ohyama, Hiroe

2018-04-01

The aim of this study was to determine how dental student self-assessment and faculty assessment of operative preparations compared for conventional visual assessment versus assessment of scanned digital 3D models. In 2016, all third-year students in the Class of 2018 (N=35) at Harvard School of Dental Medicine performed preclinical exams of Class II amalgam preparations (C2AP) and Class III composite preparations (C3CP) and completed self-assessment forms; in 2017, all third-year students in the Class of 2019 (N=34) performed the same exams. Afterwards, the prepared typodont teeth were digitally scanned. Students self-assessed their preparations digitally, and four faculty members graded the preparations conventionally and digitally. The results showed that, overall, the students assessed their preparations higher than the faculty assessments. The mean student-faculty gaps for C2AP and C3CP in the conventional assessments were 11% and 5%, respectively. The mean digital student-faculty gap for C2AP and C3CP were 8% and 2%, respectively. In the conventional assessments, preclinical performance was negatively correlated with the student-faculty gap (r=-0.47, pStudents in the bottom quartile significantly improved their self-assessment accuracy using digital self-assessments over conventional assessments (C2AP 10% vs. 17% and C3CP 3% vs. 10%, respectively). These results suggest that digital assessments offered a significant learning opportunity for students to critically self-assess themselves in operative preclinical dentistry. The lower performing students benefitted the most, improving their assessment ability to the level of the rest of the class.

A scanning probe microscope for magnetoresistive cantilevers utilizing a nested scanner design for large-area scans

Directory of Open Access Journals (Sweden)

Tobias Meier

2015-02-01

Full Text Available We describe an atomic force microscope (AFM for the characterization of self-sensing tunneling magnetoresistive (TMR cantilevers. Furthermore, we achieve a large scan-range with a nested scanner design of two independent piezo scanners: a small high resolution scanner with a scan range of 5 × 5 × 5 μm3 is mounted on a large-area scanner with a scan range of 800 × 800 × 35 μm3. In order to characterize TMR sensors on AFM cantilevers as deflection sensors, the AFM is equipped with a laser beam deflection setup to measure the deflection of the cantilevers independently. The instrument is based on a commercial AFM controller and capable to perform large-area scanning directly without stitching of images. Images obtained on different samples such as calibration standard, optical grating, EPROM chip, self-assembled monolayers and atomic step-edges of gold demonstrate the high stability of the nested scanner design and the performance of self-sensing TMR cantilevers.

Theory of life time measurements with the scanning electron microscope: steady state

NARCIS (Netherlands)

Berz, F.; Kuiken, H.K.

1976-01-01

A theoretical steady state analysis is given of the scanning electron microscope method of measuring bulk life time in diodes, where the plane of the junction is perpendicular to the surface. The current in the junction is obtained as a function of the beam power, the beam penetration into the

Scanning electron microscopy of the collodion membrane from a self-healing collodion baby*

Science.gov (United States)

de Almeida Jr., Hiram Larangeira; Isaacsson, Henrique; Guarenti, Isabelle Maffei; Silva, Ricardo Marques e; de Castro, Luis Antônio Suita

2015-01-01

Abstract Self-healing collodion baby is a well-established subtype of this condition. We examined a male newborn, who was covered by a collodion membrane. The shed membrane was examined with scanning electron microscopy. The outer surface showed a very compact keratin without the normal elimination of corneocytes. The lateral view of the specimen revealed a very thick, horny layer. The inner surface showed the structure of lower corneocytes with polygonal contour. With higher magnifications villous projections were seen in the cell membrane. PMID:26375232

Charge Transport in 2D DNA Tunnel Junction Diodes

KAUST Repository

Yoon, Minho

2017-11-06

Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

Charge Transport in 2D DNA Tunnel Junction Diodes

KAUST Repository

Yoon, Minho; Min, Sung-Wook; Dugasani, Sreekantha Reddy; Lee, Yong Uk; Oh, Min Suk; Anthopoulos, Thomas D.; Park, Sung Ha; Im, Seongil

2017-01-01

Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

Remote optically-tunable transimpedance amplifiers for quantum well diodes

Energy Technology Data Exchange (ETDEWEB)

Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V

1999-08-01

In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed.

Remote optically-tunable transimpedance amplifiers for quantum well diodes

International Nuclear Information System (INIS)

Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V.

1999-01-01

In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed

Self assembled linear polymeric chains with tuneable semiflexibility using isotropic interactions

Science.gov (United States)

Abraham, Alex; Chatterji, Apratim

2018-04-01

We propose a two-body spherically symmetric (isotropic) potential such that particles interacting by the potential self-assemble into linear semiflexible polymeric chains without branching. By suitable control of the potential parameters, we can control the persistence length of the polymer and can even introduce a controlled number of branches. Thus we show how to achieve effective directional interactions starting from spherically symmetric potentials. The self-assembled polymers have an exponential distribution of chain lengths akin to what is observed for worm-like micellar systems. On increasing particle density, the polymeric chains self-organize to an ordered line-hexagonal phase where every chain is surrounded by six parallel chains, the transition is first order. On further increase in monomer density, the order is destroyed and we get a branched gel-like phase. This potential can be used to model semi-flexible equilibrium polymers with tunable semiflexibility and excluded volume. The use of the potential is computationally cheap and hence can be used to simulate and probe equilibrium polymer dynamics with long chains. The potential also gives a plausible method of tuning colloidal interactions in experiments such that one can obtain self-assembling polymeric chains made up of colloids and probe polymer dynamics using an optical microscope. Furthermore, we show how a modified potential leads to the observation of an intermediate nematic phase of self-assembled chains in between the low density disordered phase and the line-ordered hexagonal phase.

Long pulse diode experiments

Science.gov (United States)

McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.

1990-10-01

A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.

Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.

Science.gov (United States)

Kafar, A; Stanczyk, S; Sarzynski, M; Grzanka, S; Goss, J; Targowski, G; Nowakowska-Siwinska, A; Suski, T; Perlin, P

2016-05-02

We demonstrate InGaN/GaN superluminescent diodes with broadened emission spectra fabricated on surface-shaped bulk GaN (0001) substrates. The patterning changes the local vicinal angle linearly along the device waveguide, which results in an indium incorporation profile in InGaN quantum wells. The structure was investigated by microphotoluminescence mapping, showing a shift of central emission wavelength from 413 nm to 430 nm. Spectral full width at half maximum of processed superluminescent diodes is equal to 6.1 nm, while the reference chips show 3.4 nm. This approach may open the path for using nitride devices in applications requiring broad emission spectrum and high beam quality, such as optical coherence tomography.

Diode Laser Velocity Measurements by Modulated Filtered Rayleigh Scattering

Science.gov (United States)

Mach, J. J.; Varghese, P. L.; Jagodzinski, J. J.

1999-01-01

The ability of solid-state lasers to be tuned in operating frequency at MHz rates by input current modulation, while maintaining a relatively narrow line-width, has made them useful for spectroscopic measurements. Their other advantages include low cost, reliability, durability, compact size, and modest power requirements, making them a good choice for a laser source in micro-gravity experiments in drop-towers and in flight. For their size, they are also very bright. In a filtered Rayleigh scattering (FRS) experiment, a diode laser can be used to scan across an atomic or molecular absorption line, generating large changes in transmission at the resonances for very small changes in frequency. The hyperfine structure components of atomic lines of alkali metal vapors are closely spaced and very strong, which makes such atomic filters excellent candidates for sensitive Doppler shift detection and therefore for high-resolution velocimetry. In the work we describe here we use a Rubidium vapor filter, and work with the strong D(sub 2) transitions at 780 nm that are conveniently accessed by near infrared diode lasers. The low power output of infrared laser diodes is their primary drawback relative to other laser systems commonly used for velocimetry. However, the capability to modulate the laser frequency rapidly and continuously helps mitigate this. Using modulation spectroscopy and a heterodyne detection scheme with a lock-in amplifier, one can extract sub-microvolt signals occurring at a specific frequency from a background that is orders of magnitude stronger. The diode laser modulation is simply achieved by adding a small current modulation to the laser bias current. It may also be swept repetitively in wavelength using an additional lower frequency current ramp.

Perception of linear horizontal self-motion induced by peripheral vision /linearvection/ - Basic characteristics and visual-vestibular interactions

Science.gov (United States)

Berthoz, A.; Pavard, B.; Young, L. R.

1975-01-01

The basic characteristics of the sensation of linear horizontal motion have been studied. Objective linear motion was induced by means of a moving cart. Visually induced linear motion perception (linearvection) was obtained by projection of moving images at the periphery of the visual field. Image velocity and luminance thresholds for the appearance of linearvection have been measured and are in the range of those for image motion detection (without sensation of self motion) by the visual system. Latencies of onset are around 1 sec and short term adaptation has been shown. The dynamic range of the visual analyzer as judged by frequency analysis is lower than the vestibular analyzer. Conflicting situations in which visual cues contradict vestibular and other proprioceptive cues show, in the case of linearvection a dominance of vision which supports the idea of an essential although not independent role of vision in self motion perception.

Elimination Voltammetry with Linear Scan as a New Detection Method for DNA Sensors

Directory of Open Access Journals (Sweden)

Rene Kizek

2005-11-01

Full Text Available The paper describes successful coupling of adsorptive transfer stripping (AdTS andelimination voltammetry with linear scan (EVLS for the resolution of reduction signals of cytosine (Cand adenine (A residues in hetero-oligodeoxynucleotides (ODNs. Short ODNs (9-mers and 20-merswere adsorbed from a small volume on a hanging mercury drop electrode (HMDE. After washing ofthe ODN-modified electrode by water and its transferring to an electrochemical cell, voltammetric curves were measured. The AdTS EVLS was able to determine of C/A ratio of ODNs through theelimination function conserving the diffusion current component and eliminating kinetic and chargingcurrent components. This function, which provides the elimination signal in a peak-counterpeak form,increased the current sensitivity for A and C resolution, and for the recognition of bases sequences inODN chains. Optimal conditions of elimination experiments such as pH, time of adsorption, and scanrate were found. The combination of EVLS with AdTS procedure can be considered as a newdetection method in a DNA sensor.

n-ZnO nanorods/p+-Si (111) heterojunction light emitting diodes

Science.gov (United States)

Tsai, Jenn Kai; Shih, Jun Hong; Wu, Tian Chiuan; Meen, Teen Hang

2012-12-01

In this study, we report the effects of thermal annealing in nitrogen ambient on the optical and electrical properties of zinc oxide (ZnO) nanorod (NR) arrays for the application in light emission diodes (LED). The single-crystalline ZnO NR array was synthesized on p+-Si (111) substrate without seed layer using simple, low-cost, and low-temperature hydrothermal method. The substrate surface was functionalized by hydrofluoric acid and self-assembled monolayer of octadecyltrimethoxysilane ((CH3 (CH2)17Si(OCH3)3). ZnO NRs were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and micro-photoluminescence (micro-PL). The results of FESEM and XRD indicate that single crystalline ZnO NRs with (002) preferred orientation along the substrate surface is successfully grown on functionalized p+-Si (111) substrate. The current-voltage and electroluminescence (EL) characteristics of the LED show that the most suitable annealing temperature ranges from 400°C to 600°C. Both PL and EL spectra show broadband emissions, ultraviolet and visible (green-yellow) light. The white-like light emission is able to be observed by naked eyes.

Evaluation of automatic densitometer with laser diode

International Nuclear Information System (INIS)

Larrea Cox, Pedro J.; Hernandez Tabares, Lorenzo; Suarez San Pedro, Cirilo E.; Vazquez Cano, Aradys; Reyes Rodriguez, Marlen de los

2009-01-01

The evaluation of a prototype of an automatic transmission scanning densitometer is presented. It contains a semiconductor diode laser as a light source, and is mainly oriented to the analysis of protein electrophoresis. It was developed on the Center for Technological Applications and Nuclear Development (CEADEN). Its technical specifications were established and certified by the National Institute of Researches on Metrology (INIMET), and also the equipment was submitted for assays to the Process Control Laboratory, that belongs to the 'Adalberto Pesant' Enterprise for Sera and Hemo derivatives Products, in Havana city, where it was employed to the partial quality control of products that are made there, achieving satisfactory results. (Author)

Pre-clinical evaluation of a diode-based In vivo dosimetry system

International Nuclear Information System (INIS)

Trujillo, G.

1998-01-01

Diode detector systems are routinely used in a number of departments for the quality assurance of the delivered dose in radiation oncology (1,2,3,4,5). The main advantage of diode detectors for in vivo dosimetry (over TLDs, film dosimetry, ionization chambers) is that results are immediately available in real time, do not need external bias voltage and are more sensitive for the same detection volume than ionization chambers thereby allowing a direct and immediate check of the treatment accuracy. Also, is important to mention that is possible to obtain different accuracy levels. For example, in the case of the measurements designed for evaluating the dosimetric accuracy of a new treatment technique for dose escalation studies the action level should be tighter (the order of 2 % to 4 %, 2 standard deviations) than for routine measurements aiming to discover and correct for errors in the treatment of individual patients (± 5 % - 10 % or to avoid mis administrations (10 % - 15 %). This work describes the calibration method adopted and the evaluation of the accuracy and precision of in vivo dosimetry at Co 60 and 23 MV photon energies. Extensive phantoms measurements were made to determine the influence of physical conditions on the diode response. Parameters investigated included diode linearity, leakage, and measurement reproducibility, as well as the field size, SSD, and angular dependence. the practical consequences of these measurements are reported. There is still some controversy as to whether in vivo (diode) dosemeters are required for routine quality assurance purposes. Our work has shown that while care must be taken in choosing and handling diode detector systems they are able to provide an efficient and effective method of ensuring the dose delivered to the patient during treatment is within acceptable limits. (Author)

Laterally injected light-emitting diode and laser diode

Science.gov (United States)

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Investigation of Supramolecular Coordination Self-Assembly and Polymerization Confined on Metal Surfaces Using Scanning Tunneling Microscopy

Science.gov (United States)

Lin, Tao

Organic molecules are envisioned as the building blocks for design and fabrication of functional devices in future, owing to their versatility, low cost and flexibility. Although some devices such as organic light-emitting diode (OLED) have been already applied in our daily lives, the field is still in its infancy and numerous challenges still remain. In particular, fundamental understanding of the process of organic material fabrication at a molecular level is highly desirable. This thesis focuses on the design and fabrication of supramolecular and macromolecular nanostructures on a Au(111) surface through self-assembly, polymerization and a combination of two. We used scanning tunneling microscopy (STM) as an experimental tool and Monte Carlo (MC) and kinetic Monte Carlo (KMC) simulations as theoretical tools to characterize the structures of these systems and to investigate the mechanisms of the self-assembly and polymerization processes at a single-molecular level. The results of this thesis consist of four parts as below: Part I addresses the mechanisms of two-dimensional multicomponent supramolecular self-assembly via pyridyl-Fe-terpyridyl coordination. Firstly, we studied four types of self-assembled metal-organic systems exhibiting different dimensionalities using specifically-designed molecular building blocks. We found that the two-dimensional system is under thermodynamic controls while the systems of lower dimension are under kinetic controls. Secondly, we studied the self-assembly of a series of cyclic supramolecular polygons. Our results indicate that the yield of on-surface cyclic polygon structures is very low independent of temperature and concentration and this phenomenon can be attributed to a subtle competition between kinetic and thermodynamic controls. These results shed light on thermodynamic and kinetic controls in on-surface coordination self-assembly. Part II addresses the two-dimensional supramolecular self-assembly of porphyrin

A Linear Empirical Model of Self-Regulation on Flourishing, Health, Procrastination, and Achievement, Among University Students

Science.gov (United States)

Garzón-Umerenkova, Angélica; de la Fuente, Jesús; Amate, Jorge; Paoloni, Paola V.; Fadda, Salvatore; Pérez, Javier Fiz

2018-01-01

This research aimed to analyze the linear bivariate correlation and structural relations between self-regulation -as a central construct-, with flow, health, procrastination and academic performance, in an academic context. A total of 363 college students took part, 101 men (27.8%) and 262 women (72.2%). Participants had an average age of 22 years and were between the first and fifth year of studies. They were from five different programs and two universities in Bogotá city (Colombia). A validated ad hoc questionnaire of physical and psychological health was applied along with a battery of tests to measure self-regulation, procrastination, and flourishing. To establish an association relationship, Pearson bivariate correlations were performed using SPSS software (v. 22.0), and structural relationship predictive analysis was performed using an SEM on AMOS software (v. 22.0). Regarding this linear association, it was established that (1) self-regulation has a significant positive association on flourishing and overall health, and a negative effect on procrastination. Regarding the structural relation, it confirmed that (2) self-regulation is a direct and positive predictor of flourishing and health; (3) self-regulation predicts procrastination directly and negatively, and academic performance indirectly and positively; and (4) age and gender have a prediction effect on the analyzed variables. Implications, limitations and future research scope are discussed.

A Linear Empirical Model of Self-Regulation on Flourishing, Health, Procrastination, and Achievement, Among University Students

Directory of Open Access Journals (Sweden)

Angélica Garzón-Umerenkova

2018-04-01

Full Text Available This research aimed to analyze the linear bivariate correlation and structural relations between self-regulation -as a central construct-, with flow, health, procrastination and academic performance, in an academic context. A total of 363 college students took part, 101 men (27.8% and 262 women (72.2%. Participants had an average age of 22 years and were between the first and fifth year of studies. They were from five different programs and two universities in Bogotá city (Colombia. A validated ad hoc questionnaire of physical and psychological health was applied along with a battery of tests to measure self-regulation, procrastination, and flourishing. To establish an association relationship, Pearson bivariate correlations were performed using SPSS software (v. 22.0, and structural relationship predictive analysis was performed using an SEM on AMOS software (v. 22.0. Regarding this linear association, it was established that (1 self-regulation has a significant positive association on flourishing and overall health, and a negative effect on procrastination. Regarding the structural relation, it confirmed that (2 self-regulation is a direct and positive predictor of flourishing and health; (3 self-regulation predicts procrastination directly and negatively, and academic performance indirectly and positively; and (4 age and gender have a prediction effect on the analyzed variables. Implications, limitations and future research scope are discussed.

A Linear Empirical Model of Self-Regulation on Flourishing, Health, Procrastination, and Achievement, Among University Students.

Science.gov (United States)

Garzón-Umerenkova, Angélica; de la Fuente, Jesús; Amate, Jorge; Paoloni, Paola V; Fadda, Salvatore; Pérez, Javier Fiz

2018-01-01

This research aimed to analyze the linear bivariate correlation and structural relations between self-regulation -as a central construct-, with flow, health, procrastination and academic performance, in an academic context. A total of 363 college students took part, 101 men (27.8%) and 262 women (72.2%). Participants had an average age of 22 years and were between the first and fifth year of studies. They were from five different programs and two universities in Bogotá city (Colombia). A validated ad hoc questionnaire of physical and psychological health was applied along with a battery of tests to measure self-regulation, procrastination, and flourishing. To establish an association relationship, Pearson bivariate correlations were performed using SPSS software (v. 22.0), and structural relationship predictive analysis was performed using an SEM on AMOS software (v. 22.0). Regarding this linear association, it was established that (1) self-regulation has a significant positive association on flourishing and overall health, and a negative effect on procrastination. Regarding the structural relation, it confirmed that (2) self-regulation is a direct and positive predictor of flourishing and health; (3) self-regulation predicts procrastination directly and negatively, and academic performance indirectly and positively; and (4) age and gender have a prediction effect on the analyzed variables. Implications, limitations and future research scope are discussed.

Power blue and green laser diodes and their applications

Science.gov (United States)

Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

2013-03-01

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

Laterality of foetal self-touch in relation to maternal stress.

Science.gov (United States)

Reissland, Nadja; Aydin, Ezra; Francis, Brian; Exley, Kendra

2015-01-01

This longitudinal observational study investigated whether foetuses change their hand preference with gestational age, and also examined the effects of maternal stress on lateralized foetal self-touch. Following ethical approval, fifteen healthy foetuses (eight girls and seven boys) were scanned four times from 24 to 36 weeks gestation. Self-touch behaviours which resulted in a touch of the foetal face/head were coded in 60 scans for 10 min and analysed in terms of frequency of the foetuses using left and right hands to touch their face. The joint effects of foetal age, stress and sex on laterality were assessed. We modelled the proportion of right self-touches for each foetal scan using a generalized linear mixed model, taking account of the repeated measures design. There was substantial variability in hand preference between foetuses. However, there was no significant increase in the proportion of right-handed touches with foetal age. No sex differences in handedness were identified. However, maternally reported stress level was significantly positively related to foetal left-handed self-touches (odds ratio 0.915; p < .0001). This longitudinal study provides important new insights into the effect of recent maternal stress on foetal predominant hand use during self-touch.

Recent results from experimental and numerical investigations of the self-magnetically B{sub {Theta}}-insulated ion diode

Energy Technology Data Exchange (ETDEWEB)

Bauer, W; Hoppe, P; Bachmann, H [Forschungszentrum Karlsruhe (Germany); and others

1997-12-31

Comparison of the observed and calculated data of foil acceleration experiments on KALIF showed discrepancies which called for a re-investigation of the beam characteristics produced by the Bo-Diode. It was shown that the peak power density achieved in the focus is only 0.15 TW/cm{sup 2} and not 0.25 TW/cm{sup 2} as reported earlier. In addition, a most likely time history of the proton power density with a FWHM pulse duration of 60 ns in the focus was derived. The experiments led to a new description of the operating principle of this diode, which was confirmed by particle-in-cell-simulations. As a result of these considerations, suggestions for a new design of the diode were developed and investigated by simulations. (author). 7 figs., 6 refs.

Simplified Chua's attractor via bridging a diode pair

Directory of Open Access Journals (Sweden)

Quan Xu

2015-04-01

Full Text Available In this paper, a simplified Chua's circuit is realised by bridging a diode pair between a passive LC (inductance and capacitance in parallel connection - LC oscillator and an active RC (resistance and capacitance in parallel connection - RC filter. The dynamical behaviours of the circuit are investigated by numerical simulations and verified by experimental measurements. It is found that the simplified Chua's circuit generates Chua's attractors similarly and demonstrates complex non-linear phenomena including coexisting bifurcation modes and coexisting attractors in particular.

Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate.

Science.gov (United States)

Wu, Chia-Ching; Yang, Cheng-Fu

2013-06-12

P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a transparent p-n heterojunction diode. The structural, optical, and electrical properties of the p-LNiO and ITO thin films and the p-LNiO/n-ITO heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and current-voltage (I-V) measurements. The nonlinear and rectifying I-V properties confirmed that a heterojunction diode characteristic was successfully formed in the p-LNiO/n-ITO (p-n) structure. The I-V characteristic was dominated by space-charge-limited current (SCLC), and the Anderson model demonstrated that band alignment existed in the p-LNiO/n-ITO heterojunction diode.

A Passive X-Band Double Balanced Mixer Utilizing Diode Connected SiGe HBTs

DEFF Research Database (Denmark)

Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld

2013-01-01

In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compressio...

Near-infrared dental imaging using scanning fiber endoscope

Science.gov (United States)

Zhou, Yaxuan; Lee, Robert; Sadr, Alireza; Seibel, Eric J.

2018-02-01

Near-infrared (NIR) wavelength range of 1300-1500nm has the potential to outperform or augment other dental imaging modalities such as fluorescence imaging, owing to its lower scattering coefficient in enamel and trans- parency on stains and non-cariogenic plaque. However, cameras in this wavelength range are bulky and expensive, which lead to difficulties for in-vivo use and commercialization. Thus, we have proposed a new imaging device combining the scanning fiber endoscopy (SFE) and NIR imaging technology. The NIR SFE system has the advantage of miniature size (1.6 mm), flexible shaft, video frame rate (7Hz) and expandable wide field-of-view (60 degrees). Eleven extracted human teeth with or without occlusal caries were scanned by micro-computed X-ray tomography (micro-CT) to obtain 3D micro-CT images, which serve as the standard for comparison. NIR images in reflection mode were then taken on all the occlusal surfaces, using 1310nm super luminescent diode and 1460nm laser diode respectively. Qualitative comparison was performed between near-infrared im- ages and micro-CT images. Enamel demineralization in NIR appeared as areas of increased reflectivity, and distinguished from non-carious staining at the base of occlusal fissures or developmental defects on cusps. This preliminary work presented proof for practicability of combining NIR imaging technology with SFE for reliable and noninvasive dental imaging with miniaturization and low cost.

Study on photon sensitivity of silicon diodes related to materials used for shielding

International Nuclear Information System (INIS)

Moiseev, T.

1999-01-01

Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter. (author)

Study on Photon Sensitivity of Silicon Diodes Related to Materials Used for Shielding

International Nuclear Information System (INIS)

Moiseev, T.

2000-01-01

Large area Silicon diodes used in electronic neutron dosemeters have a significant over-response to X and gamma rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diodes active area and strongly affects the neutron sensitivity of such dosemeters. Since Silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X and gamma rays energy range is proposed by designing a composed photon filter. (author)

Powering laser diode systems

CERN Document Server

Trestman, Grigoriy A

2017-01-01

This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

Scanning slit for HIE-ISOLDE: vibrational test (linear motion actuator from UHV design, speed = 2.5 mm/s)

CERN Document Server

Bravin, E; Sosa, A

2014-01-01

This report summarizes the results of a series of tests performed on the prototype HIE-ISOLDE diagnostic box (HIE-DB) regarding the vibrations and drifts in the transverse position of the scanning blade while moving inside or outside the box. To monitor the transverse position of the blade, a series of 0.1 mm diameter holes were drilled on it and their positions were tracked with an optical system. The linear motion actuator was acquired from UHV design (model LSM38-150-SS), is driven by a stepper motor and has all the guiding mechanisms outside vacuum. The maximum speed of the scanning blade during the tests was 2.5 mm/s. The transverse movement of the slit in the direction perpendicular to the movement was lower than 50 m, and is dominated by the displacement of the contact point of the applied force on the lead-screw. An offset on the slit position was observed while changing the direction of movement of the blade, its amplitude being of the order of 30 m. The amplitudes of the displacements of the transve...

Nonequilibrium transition and pattern formation in a linear reaction-diffusion system with self-regulated kinetics

Science.gov (United States)

Paul, Shibashis; Ghosh, Shyamolina; Ray, Deb Shankar

2018-02-01

We consider a reaction-diffusion system with linear, stochastic activator-inhibitor kinetics where the time evolution of concentration of a species at any spatial location depends on the relative average concentration of its neighbors. This self-regulating nature of kinetics brings in spatial correlation between the activator and the inhibitor. An interplay of this correlation in kinetics and disparity of diffusivities of the two species leads to symmetry breaking non-equilibrium transition resulting in stationary pattern formation. The role of initial noise strength and the linear reaction terms has been analyzed for pattern selection.

Characterization of ultrashort laser pulses employing self-phase modulation dispersion-scan technique

Science.gov (United States)

Sharba, A. B.; Chekhlov, O.; Wyatt, A. S.; Pattathil, R.; Borghesi, M.; Sarri, G.

2018-03-01

We present a new phase characterization technique for ultrashort laser pulses that employs self-phase modulation (SPM) in the dispersion scan approach. The method can be implemented by recording a set of nonlinearly modulated spectra generated with a set of known chirp values. The unknown phase of the pulse is retrieved by linking the recorded spectra to the initial spectrum of the pulse via a phase function guessed by a function minimization iterative algorithm. This technique has many advantages over the dispersion scan techniques that use frequency conversion processes. Mainly, the use of SPM cancels out the phase and group velocity mismatch errors and dramatically widens the spectral acceptance of the nonlinear medium and the range of working wavelength. The robustness of the technique is demonstrated with smooth and complex phase retrievals using numerical examples. The method is shown to be not affected by the spatial distribution of the beam or the presence of nonlinear absorption process. In addition, we present an efficient method for phase representation based on a summation of a set of Gaussian functions. The independence of the functions from each other prevents phase coupling of any kind and facilitates a flexible phase representation.

Special set linear algebra and special set fuzzy linear algebra

OpenAIRE

Kandasamy, W. B. Vasantha; Smarandache, Florentin; Ilanthenral, K.

2009-01-01

The authors in this book introduce the notion of special set linear algebra and special set fuzzy Linear algebra, which is an extension of the notion set linear algebra and set fuzzy linear algebra. These concepts are best suited in the application of multi expert models and cryptology. This book has five chapters. In chapter one the basic concepts about set linear algebra is given in order to make this book a self contained one. The notion of special set linear algebra and their fuzzy analog...

Performance of the cold powered diodes and diode leads in the main magnets of the LHC

CERN Document Server

Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

2015-01-01

During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

High average power diode pumped solid state lasers for CALIOPE

International Nuclear Information System (INIS)

Comaskey, B.; Halpin, J.; Moran, B.

1994-07-01

Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

Linearized self-consistent quasiparticle GW method: Application to semiconductors and simple metals

Science.gov (United States)

Kutepov, A. L.; Oudovenko, V. S.; Kotliar, G.

2017-10-01

We present a code implementing the linearized quasiparticle self-consistent GW method (LQSGW) in the LAPW basis. Our approach is based on the linearization of the self-energy around zero frequency which differs it from the existing implementations of the QSGW method. The linearization allows us to use Matsubara frequencies instead of working on the real axis. This results in efficiency gains by switching to the imaginary time representation in the same way as in the space time method. The all electron LAPW basis set eliminates the need for pseudopotentials. We discuss the advantages of our approach, such as its N3 scaling with the system size N, as well as its shortcomings. We apply our approach to study the electronic properties of selected semiconductors, insulators, and simple metals and show that our code produces the results very close to the previously published QSGW data. Our implementation is a good platform for further many body diagrammatic resummations such as the vertex-corrected GW approach and the GW+DMFT method. Program Files doi:http://dx.doi.org/10.17632/cpchkfty4w.1 Licensing provisions: GNU General Public License Programming language: Fortran 90 External routines/libraries: BLAS, LAPACK, MPI (optional) Nature of problem: Direct implementation of the GW method scales as N4 with the system size, which quickly becomes prohibitively time consuming even in the modern computers. Solution method: We implemented the GW approach using a method that switches between real space and momentum space representations. Some operations are faster in real space, whereas others are more computationally efficient in the reciprocal space. This makes our approach scale as N3. Restrictions: The limiting factor is usually the memory available in a computer. Using 10 GB/core of memory allows us to study the systems up to 15 atoms per unit cell.

Graphene geometric diodes for terahertz rectennas

International Nuclear Information System (INIS)

Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

2013-01-01

We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

High-efficient Nd:YAG microchip laser for optical surface scanning

Science.gov (United States)

Šulc, Jan; Jelínková, Helena; Nejezchleb, Karel; Škoda, Václav

2017-12-01

A CW operating, compact, high-power, high-efficient diode pumped 1064nm laser, based on Nd:YAG active medium, was developed for optical surface scanning and mapping applications. To enhance the output beam quality, laser stability, and compactness, a microchip configuration was used. In this arrangement the resonator mirrors were deposited directly on to the laser crystal faces. The Nd-doping concentration was 1 at.% Nd/Y. The Nd:YAG crystal was 5mm long. The laser resonator without pumping radiation recuperation was investigated {the output coupler was transparent for pumping radiation. For the generated laser radiation the output coupler reflectivity was 95%@1064 nm. The diameter of the samples was 5 mm. For the laser pumping two arrangements were investigated. Firstly, a fibre coupled laser diode operating at wavelength 808nm was used in CW mode. The 400 ¹m fiber was delivering up to 14W of pump power amplitude to the microchip laser. The maximum CW output power of 7.2W @ 1064nm in close to TEM00 beam was obtained for incident pumping power 13.7W @ 808 nm. The differential efficiency in respect to the incident pump power reached 56 %. Secondly, a single-emitter, 1W laser diode operating at 808nm was used for Nd:YAG microchip pumping. The laser pumping was directly coupled into the microchip laser using free-space lens optics. Slope efficiency up to 70% was obtained in stable, high-quality, 1064nm laser beam with CW power up to 350mW. The system was successfully used for scanning of super-Gaussian laser mirrors reflectivity profile.

In vivo dosimetry with diodes in a radiotherapy department in Pakistan

International Nuclear Information System (INIS)

Tunio, M.; Rafi, M.; Ali, S.; Ahmed, Z.; Zameer, A.; Hashmi, A.; Maqbool, S. A.

2011-01-01

The International Commission of Radiological Units (ICRU) sets a tolerance of ±5 % on dose delivery, with more recent data limiting the overall tolerances to ±3 %. One of the best methods for accurate dose delivery and quality check is in vivo dosimetry, while radiotherapy is performed. The present study was carried out to test the applicability of diodes for performing in vivo entrance dose measurements in external photon beam radiotherapy for pelvic tumours and its implementation as quality assurance tool in radiotherapy. During November 2007 to December 2009, in 300 patients who received pelvic radiotherapy on a multi-leaf-collimator-assisted linear accelerator, the central axis dose was measured by in vivo dosimetry by p-Si diodes. Entrance dose measurements were taken by diodes and were compared with the prescribed dose. Totally 1000 calculations were performed. The mean and standard deviation between measured and prescribed dose was 1.26 ± 2.8 %. In 938 measurements (93.8 %), the deviation was 5 % (5.51 ± 2.3 %). Larger variations were seen in lateral and oblique fields more than anteroposterior fields. For larger deviations, patients and diode positional errors were found to be the common factors alone or in combination with other factors. After additional corrections, repeated measurements were achieved within tolerance levels. This study showed that diode-detector-based in vivo dosimetry was simple, cost-effective, provides quick results and can serve as a useful quality assurance tool in radiotherapy. The data acquired in the present study can be used for evaluating output calibration of therapy machine, precision of calculations, effectiveness of treatment plan and patient setup. (authors)

MEMS scanner mirror based system for retina scanning and in eye projection

Science.gov (United States)

Woittennek, Franziska; Knobbe, Jens; Pügner, Tino; Dallmann, Hans-Georg; Schelinski, Uwe; Grüger, Heinrich

2015-02-01

Many applications could benefit from miniaturized systems to scan blood vessels behind the retina in the human eye, so called "retina scanning". This reaches from access control to sophisticated security applications and medical devices. High volume systems for consumer applications require low cost and a user friendly operation. For example this includes no need for removal of glasses and self-adjustment, in turn guidance of focus and point of attraction by simultaneous projection for the user. A new system has been designed based on the well-known resonantly driven 2-d scanner mirror of Fraunhofer IPMS. A combined NIR and VIS laser system illuminates the eye through an eye piece designed for an operating distance allowing the use of glasses and granting sufficient field of view. This usability feature was considered to be more important than highest miniaturization. The modulated VIS laser facilitates the projection of an image directly onto the retina. The backscattered light from the continuous NIR laser contains the information of the blood vessels and is detected by a highly sensitive photo diode. A demonstrational setup has been realized including readout and driving electronics. The laser power was adjusted to an eye-secure level. Additional security features were integrated. Test measurements revealed promising results. In a first demonstration application the detection of biometric pattern of the blood vessels was evaluated for issues authentication in.

Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL)

International Nuclear Information System (INIS)

Lim, Daniel J; Ki, Hyungson; Mazumder, Jyoti

2006-01-01

A fundamental study on the Q-switched diode-pumped solid-state laser interaction with silicon was performed both experimentally and numerically. Single pulse drilling experiments were conducted on N-type silicon wafers by varying the laser intensity from 10 8 -10 9 W cm -2 to investigate how the mass removal mechanism changes depending on the laser intensity. Hole width and depth were measured and surface morphology was studied using scanning electron microscopy. For the numerical model study, Ki et al's self-consistent continuous-wave laser drilling model (2001 J. Phys. D: Appl. Phys. 34 364-72) was modified to treat the solidification phenomenon between successive laser pulses. The model has the capabilities of simulating major interaction physics, such as melt flow, heat transfer, evaporation, homogeneous boiling, multiple reflections and surface evolution. This study presents some interesting results on how the mass removal mode changes as the laser intensity increases

Photo-Detectors Integrated with Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

José M. L. Figueiredo

2013-07-01

Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

Investigation into diode pumped modelocked Nd based laser oscillators for the CLIC-3 photoinjector system

NARCIS (Netherlands)

Valentine, G.J.; Burns, D.; Bente, E.A.J.M.; Berghmans, F.; Thienpont, H.; Danckaert, J.; Desmet, L.

2001-01-01

The photo-injector system envisaged for the proposed CLIC linear e+-e- accelerator at CERN has a demanding set of specifications on output pulse structure, power and timing stability. This paper reports on results obtained with quasi-CW diode pumped laser oscillators with output stabilisation. A

Towards Robust Self-Calibration for Handheld 3d Line Laser Scanning

Science.gov (United States)

Bleier, M.; Nüchter, A.

2017-11-01

This paper studies self-calibration of a structured light system, which reconstructs 3D information using video from a static consumer camera and a handheld cross line laser projector. Intersections between the individual laser curves and geometric constraints on the relative position of the laser planes are exploited to achieve dense 3D reconstruction. This is possible without any prior knowledge of the movement of the projector. However, inaccurrately extracted laser lines introduce noise in the detected intersection positions and therefore distort the reconstruction result. Furthermore, when scanning objects with specular reflections, such as glossy painted or metalic surfaces, the reflections are often extracted from the camera image as erroneous laser curves. In this paper we investiagte how robust estimates of the parameters of the laser planes can be obtained despite of noisy detections.

MR guided spatial normalization of SPECT scans

International Nuclear Information System (INIS)

Crouch, B.; Barnden, L.R.; Kwiatek, R.

2010-01-01

Full text: In SPECT population studies where magnetic resonance (MR) scans are also available, the higher resolution of the MR scans allows for an improved spatial normalization of the SPECT scans. In this approach, the SPECT images are first coregistered to their corresponding MR images by a linear (affine) transformation which is calculated using SPM's mutual information maximization algorithm. Non-linear spatial normalization maps are then computed either directly from the MR scans using SPM's built in spatial normalization algorithm, or, from segmented TI MR images using DARTEL, an advanced diffeomorphism based spatial normalization algorithm. We compare these MR based methods to standard SPECT based spatial normalization for a population of 27 fibromyalgia patients and 25 healthy controls with spin echo T 1 scans. We identify significant perfusion deficits in prefrontal white matter in FM patients, with the DARTEL based spatial normalization procedure yielding stronger statistics than the standard SPECT based spatial normalization. (author)

Temperature Scanning Stress Relaxation of an Autonomous Self-Healing Elastomer Containing Non-Covalent Reversible Network Junctions

Directory of Open Access Journals (Sweden)

Amit Das

2018-01-01

Full Text Available In this work, we report about the mechanical relaxation characteristics of an intrinsically self-healable imidazole modified commercial rubber. This kind of self-healing rubber was prepared by melt mixing of 1-butyl imidazole with bromo-butyl rubber (bromine modified isoprene-isobutylene copolymer, BIIR. By this melt mixing process, the reactive allylic bromine of bromo-butyl rubber was converted into imidazole bromide salt. The resulting development of an ionic character to the polymer backbone leads to an ionic association of the groups which ultimately results to the formation of a network structure of the rubber chains. The modified BIIR thus behaves like a robust crosslinked rubber and shows unusual self-healing properties. The non-covalent reversible network has been studied in detail with respect to stress relaxation experiments, scanning electron microscopic and X-ray scattering.

Ultra-Fast All-Optical Self-Aware Protection Switching Based on a Bistable Laser Diode

DEFF Research Database (Denmark)

An, Yi; Vukovic, Dragana; Lorences Riesgo, Abel

2014-01-01

We propose a novel concept of all-optical protection switching with link failure automatic awareness based on AOWFF. The scheme is experimentally demonstrated using a single MG-Y laser diode with a record switching time ~200 ps....

Bipolar one diode-one resistor integration for high-density resistive memory applications.

Science.gov (United States)

Li, Yingtao; Lv, Hangbing; Liu, Qi; Long, Shibing; Wang, Ming; Xie, Hongwei; Zhang, Kangwei; Huo, Zongliang; Liu, Ming

2013-06-07

Different from conventional unipolar-type 1D-1R RRAM devices, a bipolar-type 1D-1R memory device concept is proposed and successfully demonstrated by the integration of Ni/TiOx/Ti diode and Pt/HfO2/Cu bipolar RRAM cell to suppress the undesired sneak current in a cross-point array. The bipolar 1D-1R memory device not only achieves self-compliance resistive switching characteristics by the reverse bias current of the Ni/TiOx/Ti diode, but also exhibits excellent bipolar resistive switching characteristics such as uniform switching, satisfactory data retention, and excellent scalability, which give it high potentiality for high-density integrated nonvolatile memory applications.

Duality in non-linear B and F models: equivalence between self-dual and topologically massive Born-Infeld B and F models

International Nuclear Information System (INIS)

Menezes, R.; Nascimento, J.R.S.; Ribeiro, R.F.; Wotzasek, C.

2002-01-01

We study the dual equivalence between the non-linear generalization of the self-dual (NSD BF ) and the topologically massive B and F models with particular emphasis on the non-linear electrodynamics proposed by Born and Infeld. This is done through a dynamical gauge embedding of the non-linear self-dual model yielding to a gauge invariant and dynamically equivalent theory. We clearly show that non-polinomial NSD BF models can be map, through a properly defined duality transformation into TM BF actions. The general result obtained is then particularized for a number of examples, including the Born-Infeld-BF (BIBF) model that has experienced a revival in the recent literature

Evaluation of non-linear blending in dual-energy computed tomography

International Nuclear Information System (INIS)

Holmes, David R.; Fletcher, Joel G.; Apel, Anja; Huprich, James E.; Siddiki, Hassan; Hough, David M.; Schmidt, Bernhard; Flohr, Thomas G.; Robb, Richard; McCollough, Cynthia; Wittmer, Michael; Eusemann, Christian

2008-01-01

Dual-energy CT scanning has significant potential for disease identification and classification. However, it dramatically increases the amount of data collected and therefore impacts the clinical workflow. One way to simplify image review is to fuse CT datasets of different tube energies into a unique blended dataset with desirable properties. A non-linear blending method based on a modified sigmoid function was compared to a standard 0.3 linear blending method. The methods were evaluated in both a liver phantom and patient study. The liver phantom contained six syringes of known CT contrast which were placed in a bovine liver. After scanning at multiple tube currents (45, 55, 65, 75, 85, 95, 105, and 115 mAs for the 140-kV tube), the datasets were blended using both methods. A contrast-to-noise (CNR) measure was calculated for each syringe. In addition, all eight scans were normalized using the effective dose and statistically compared. In the patient study, 45 dual-energy CT scans were retrospectively mixed using the 0.3 linear blending and modified sigmoid blending functions. The scans were compared visually by two radiologists. For the 15, 45, and 64 HU syringes, the non-linear blended images exhibited similar CNR to the linear blended images; however, for the 79, 116, and 145 HU syringes, the non-linear blended images consistently had a higher CNR across dose settings. The radiologists qualitatively preferred the non-linear blended images of the phantom. In the patient study, the radiologists preferred non-linear blending in 31 of 45 cases with a strong preference in bowel and liver cases. Non-linear blending of dual energy data can provide an improvement in CNR over linear blending and is accompanied by a visual preference for non-linear blended images. Further study on selection of blending parameters and lesion conspicuity in non-linear blended images is being pursued

Passivation of organic light emitting diode anode grid lines by pulsed Joule heating

NARCIS (Netherlands)

Janka, M.; Gierth, R.; Rubingh, J.E.; Abendroth, M.; Eggert, M.; Moet, D.J.D.; Lupo, D.

2015-01-01

We report the self-aligned passivation of a current distribution grid for an organic light emitting diode (OLED) anode using a pulsed Joule heating method to align the passivation layer accurately on the metal grid. This method involves passing an electric current through the grid to cure a polymer

Optimization of a rod pinch diode radiography source at 2.3 MV

International Nuclear Information System (INIS)

Menge, P.R.; Johnson, D.L.; Maenchen, J.E.; Rovang, D.C.; Oliver, B.V.; Rose, D.V.; Welch, D.R.

2003-01-01

Rod pinch diodes have shown considerable capability as high-brightness flash x-ray sources for penetrating dynamic radiography. The rod pinch diode uses a small diameter (0.4-2 mm) anode rod extended through a cathode aperture. When properly configured, the electron beam born off of the aperture edge can self-insulate and pinch onto the tip of the rod creating an intense, small x-ray source. Sandia's SABRE accelerator (2.3 MV, 40 Ω, 70 ns) has been utilized to optimize the source experimentally by maximizing the figure of merit (dose/spot diameter2) and minimizing the diode impedance droop. Many diode parameters have been examined including rod diameter, rod length, rod material, cathode aperture diameter, cathode thickness, power flow gap, vacuum quality, and severity of rod-cathode misalignment. The configuration producing the greatest figure of merit uses a 0.5 mm diameter gold rod, a 6 mm rod extension beyond the cathode aperture (diameter=8 mm), and a 10 cm power flow gap to produce up to 3.5 rad (filtered dose) at 1 m from a 0.85 mm x-ray on-axis spot (1.02 mm at 3 deg. off axis). The resultant survey of parameter space has elucidated several physics issues that are discussed

Investigation on multi-frequency oscillations in InGaAs planar Gunn diode with multiple anode-cathode spacings

Science.gov (United States)

Li, B.; Alimi, Y.; Ma, G. L.

2016-12-01

Current oscillations in an AlGaAs/InGaAs/AlGaAs-based two-dimensional electron gas (2DEG)-based hetero-structure have been investigated by means of semiconductor device simulation software SILVACO, with an interest on the charge domain formation at large biases. Single-frequency oscillations are generated in planar Gunn diodes with uniform anode and cathode contacts. The oscillation frequency reduces as the applied bias voltage increases. We show that it is possible to create multiple, independent charge domains in a novel Gunn diode structure with designed multiple anode-cathode spacings. This enables simultaneous generation of multiple frequency oscillations in a single planar device, in contrast to traditional vertical Gunn diodes where only single-frequency oscillations can be achieved. More interestingly, frequency mixing in multiple-channel configured Gunn diodes appeared. This proof-of-concept opens up the possibility for realizing compact self-oscillating mixer at millimeter-wave applications.

Self-Tuning Linear Quadratic Supervisory Regulation of a Diesel Generator using Large-Signal State Estimation

DEFF Research Database (Denmark)

Knudsen, Jesper Viese; Bendtsen, Jan Dimon; Andersen, Palle

2016-01-01

In this paper, a self-tuning linear quadratic supervisory regulator using a large-signal state estimator for a diesel driven generator set is proposed. The regulator improves operational efficiency, in comparison to current implementations, by (i) automating the initial tuning process and (ii...... throughout the operating range of the diesel generator....

Self-sensing cantilevers with integrated conductive coaxial tips for high-resolution electrical scanning probe metrology

International Nuclear Information System (INIS)

Haemmerli, Alexandre J.; Pruitt, Beth L.; Harjee, Nahid; Koenig, Markus; Garcia, Andrei G. F.; Goldhaber-Gordon, David

2015-01-01

The lateral resolution of many electrical scanning probe techniques is limited by the spatial extent of the electrostatic potential profiles produced by their probes. Conventional unshielded conductive atomic force microscopy probes produce broad potential profiles. Shielded probes could offer higher resolution and easier data interpretation in the study of nanostructures. Electrical scanning probe techniques require a method of locating structures of interest, often by mapping surface topography. As the samples studied with these techniques are often photosensitive, the typical laser measurement of cantilever deflection can excite the sample, causing undesirable changes electrical properties. In this work, we present the design, fabrication, and characterization of probes that integrate coaxial tips for spatially sharp potential profiles with piezoresistors for self-contained, electrical displacement sensing. With the apex 100 nm above the sample surface, the electrostatic potential profile produced by our coaxial tips is more than 2 times narrower than that of unshielded tips with no long tails. In a scan bandwidth of 1 Hz–10 kHz, our probes have a displacement resolution of 2.9 Å at 293 K and 79 Å at 2 K, where the low-temperature performance is limited by amplifier noise. We show scanning gate microscopy images of a quantum point contact obtained with our probes, highlighting the improvement to lateral resolution resulting from the coaxial tip

Effect of linear alcohol molecular size on the self-assembly of fullerene whiskers

International Nuclear Information System (INIS)

Amer, Maher S.; Todd, T. Kyle; Busbee, John D.

2011-01-01

Highlights: → The longer the alcohol molecule, the shorter the length of the assembled whisker. → Interaction between alcohol and fullerene solvent is the key factor. → The stronger the alcohol/solvent interaction, the longer the whisker. - Abstract: The recent development of self-assembled fullerene whiskers and wires has created an enormous potential and resolved a serious challenge for utilizing such unique class of carbon material in advanced nano-scale, molecular-based electronic, optical, and thermal devices. In this paper we investigate, the self-assembly of C 60 molecules into one-dimensional whiskers using a series of linear alcohols H(CH 2 ) n OH, with n changing from 1 (methanol) to 3 (isopropyl alcohol), to elucidate the effect of alcohol molecular size on the size distribution of the self-assemble fullerene whiskers. Our results show that the length of the produced fullerene whiskers is affected by the molecular size of the alcohol used in the process. The crucial role played by solvent/alcohol interaction in the assembly process is discussed. In addition, Raman spectroscopy measurements support the notion that the self-assembled whiskers are primarily held by depletion forces and no evidence of fullerene polymerization was observed.

Tunable diode-pumped-LNA laser

International Nuclear Information System (INIS)

Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.

1987-01-01

Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW

CHARACTERIZATION OF 27 MEV PROTON BEAM GENERATED BY TOP-IMPLART LINEAR ACCELERATOR.

Science.gov (United States)

De Angelis, C; Ampollini, A; Basile, E; Cisbani, E; Della Monaca, S; Ghio, F; Montereali, R M; Picardi, L; Piccinini, M; Placido, C; Ronsivalle, C; Soriani, A; Strigari, L; Trinca, E; Vadrucci, M

2018-01-29

The first proton linear accelerator for tumor therapy based on an actively scanned beam up to the energy of 150 MeV, is under development and construction by ENEA-Frascati, ISS and IFO, under the Italian TOP-IMPLART project. Protons up to the energy of 7 MeV are generated by a customized commercial injector operating at 425 MHz; currently three accelerating modules allow proton delivery with energy up to 27 MeV. Beam homogeneity and reproducibility were studied using a 2D ionizing chamber, EBT3 films, a silicon diode, MOSFETs, LiF crystals and alanine dosimetry systems. Measurements were taken in air with the detectors at ~1 m from the beam line exit window. The maximum energy impinging on the detectors surface was 24.1 MeV, an energy suitable for radiobiological studies. Results showed beam reproducibility within 5% and homogeneity within 4%, on a circular surface of 16 mm in diameter. © The Author(s) 2018. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

Energy Technology Data Exchange (ETDEWEB)

Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

2000-04-01

Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

Self-Focusing of Quadruple Gaussian Laser Beam in an Inhomogenous Magnetized Plasma with Ponderomotive Non-Linearity: Effect of Linear Absorption

International Nuclear Information System (INIS)

Aggarwal, Munish; Vij, Shivani; Kant, Niti

2015-01-01

The propagation of quadruple Gaussian laser beam in a plasma characterized by axial inhomogeneity and nonlinearity due to ponderomotive force in the paraxial ray approximation is investigated. An appropriate expression for the nonlinear dielectric constant has been developed in the presence of external magnetic field, with linear absorption and due to saturation effects for arbitrary large intensity. The effects of different types of plasma axial inhomogeneities on self-focusing of laser beam have been studied with the typical laser and plasma parameters. Self-focusing of quadruple Gaussian laser beam in the presence of externally applied magnetic field and saturating parameter is found significantly improved in the case of extraordinary mode. Our results reveal that initially converging beam shows oscillatory convergence whereas initially diverging beam shows oscillatory divergence. The beam is more focussed at lower intensity in both cases viz. extraordinary and ordinary mode. (paper)

Dual-range linearized transimpedance amplifier system

Science.gov (United States)

Wessendorf, Kurt O.

2010-11-02

A transimpedance amplifier system is disclosed which simultaneously generates a low-gain output signal and a high-gain output signal from an input current signal using a single transimpedance amplifier having two different feedback loops with different amplification factors to generate two different output voltage signals. One of the feedback loops includes a resistor, and the other feedback loop includes another resistor in series with one or more diodes. The transimpedance amplifier system includes a signal linearizer to linearize one or both of the low- and high-gain output signals by scaling and adding the two output voltage signals from the transimpedance amplifier. The signal linearizer can be formed either as an analog device using one or two summing amplifiers, or alternately can be formed as a digital device using two analog-to-digital converters and a digital signal processor (e.g. a microprocessor or a computer).

Linear and nonlinear Biot waves in a noncohesive granular medium slab: transfer function, self-action, second harmonic generation.

Science.gov (United States)

Legland, J-B; Tournat, V; Dazel, O; Novak, A; Gusev, V

2012-06-01

Experimental results are reported on second harmonic generation and self-action in a noncohesive granular medium supporting wave energy propagation both in the solid frame and in the saturating fluid. The acoustic transfer function of the probed granular slab can be separated into two main frequency regions: a low frequency region where the wave propagation is controlled by the solid skeleton elastic properties, and a higher frequency region where the behavior is dominantly due to the air saturating the beads. Experimental results agree well with a recently developed nonlinear Biot wave model applied to granular media. The linear transfer function, second harmonic generation, and self-action effect are studied as a function of bead diameter, compaction step, excitation amplitude, and frequency. This parametric study allows one to isolate different propagation regimes involving a range of described and interpreted linear and nonlinear processes that are encountered in granular media experiments. In particular, a theoretical interpretation is proposed for the observed strong self-action effect.

Linear algebraic groups

CERN Document Server

Springer, T A

1998-01-01

"[The first] ten chapters...are an efficient, accessible, and self-contained introduction to affine algebraic groups over an algebraically closed field. The author includes exercises and the book is certainly usable by graduate students as a text or for self-study...the author [has a] student-friendly style… [The following] seven chapters... would also be a good introduction to rationality issues for algebraic groups. A number of results from the literature…appear for the first time in a text." –Mathematical Reviews (Review of the Second Edition) "This book is a completely new version of the first edition. The aim of the old book was to present the theory of linear algebraic groups over an algebraically closed field. Reading that book, many people entered the research field of linear algebraic groups. The present book has a wider scope. Its aim is to treat the theory of linear algebraic groups over arbitrary fields. Again, the author keeps the treatment of prerequisites self-contained. The material of t...

Multiphoton imaging with a novel compact diode-pumped Ti:sapphire oscillator

DEFF Research Database (Denmark)

König, Karsten; Andersen, Peter E.; Le, Tuan

2015-01-01

Multiphoton laser scanning microscopy commonly relies on bulky and expensive femtosecond lasers. We integrated a novel minimal-footprint Ti:sapphire oscillator, pumped by a frequency-doubled distributed Bragg reflector tapered diode laser, into a clinical multiphoton tomograph and evaluated its...... imaging capability using different biological samples, i.e. cell monolayers, corneal tissue, and human skin. With the novel laser, the realization of very compact Ti:sapphire-based systems for high-quality multiphoton imaging at a significantly size and weight compared to current systems will become...

Red/near-infrared light-emitting diode therapy for traumatic brain injury

Science.gov (United States)

Naeser, Margaret A.; Martin, Paula I.; Ho, Michael D.; Krengel, Maxine H.; Bogdanova, Yelena; Knight, Jeffrey A.; Yee, Megan K.; Zafonte, Ross; Frazier, Judith; Hamblin, Michael R.; Koo, Bang-Bon

2015-05-01

This invited paper reviews our research with scalp application of red/near-infrared (NIR) light-emitting diodes (LED) to improve cognition in chronic, traumatic brain injury 1. Application of red/NIR light improves mitochondrial function (especially hypoxic/compromised cells) promoting increased ATP, important for cellular metabolism. Nitric oxide is released locally, increasing regional cerebral blood flow. Eleven chronic, mTBI participants with closed-head injury and cognitive dysfunction received 18 outpatient treatments (MWF, 6 Wks) starting at 10 Mo. to 8 Yr. post-mTBI (MVA, sports-related, IED blast injury). LED therapy is non-invasive, painless, non-thermal (FDA-cleared, non-significant risk device). Each LED cluster head (2.1" diameter, 500mW, 22.2mW/cm2) was applied 10 min (13J/cm2) to 11 scalp placements: midline, from front-to-back hairline; and bilaterally on dorsolateral prefrontal cortex, temporal, and parietal areas. Testing performed pre- and post-LED (+1 Wk, 1 and 2 Mo post- 18th treatment) showed significant linear trend for LED effect over time, on improved executive function and verbal memory. Fewer PTSD symptoms were reported. New studies at VA Boston include TBI patients treated with transcranial LED (26J/cm2); or treated with only intranasal red, 633nm and NIR, 810nm diodes placed into the nostrils (25 min, 6.5mW, 11.4J/cm2). Intranasal LEDs are hypothesized to deliver photons to hippocampus. Results are similar to Naeser et al. (2014). Actigraphy sleep data show increased sleep time (average, +1 Hr/night) post-18th transcranial or intranasal LED treatment. LED treatments may be self-administered at home (Naeser et al., 2011). A shamcontrolled study with Gulf War Illness Veterans is underway.

Isotropic-resolution linear-array-based photoacoustic computed tomography through inverse Radon transform

Science.gov (United States)

Li, Guo; Xia, Jun; Li, Lei; Wang, Lidai; Wang, Lihong V.

2015-03-01

Linear transducer arrays are readily available for ultrasonic detection in photoacoustic computed tomography. They offer low cost, hand-held convenience, and conventional ultrasonic imaging. However, the elevational resolution of linear transducer arrays, which is usually determined by the weak focus of the cylindrical acoustic lens, is about one order of magnitude worse than the in-plane axial and lateral spatial resolutions. Therefore, conventional linear scanning along the elevational direction cannot provide high-quality three-dimensional photoacoustic images due to the anisotropic spatial resolutions. Here we propose an innovative method to achieve isotropic resolutions for three-dimensional photoacoustic images through combined linear and rotational scanning. In each scan step, we first elevationally scan the linear transducer array, and then rotate the linear transducer array along its center in small steps, and scan again until 180 degrees have been covered. To reconstruct isotropic three-dimensional images from the multiple-directional scanning dataset, we use the standard inverse Radon transform originating from X-ray CT. We acquired a three-dimensional microsphere phantom image through the inverse Radon transform method and compared it with a single-elevational-scan three-dimensional image. The comparison shows that our method improves the elevational resolution by up to one order of magnitude, approaching the in-plane lateral-direction resolution. In vivo rat images were also acquired.

Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

DEFF Research Database (Denmark)

Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.

2015-01-01

It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with Ga...

Vortex diode jet

Science.gov (United States)

Houck, Edward D.

1994-01-01

A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

Laser Diode Beam Basics, Manipulations and Characterizations

CERN Document Server

Sun, Haiyin

2012-01-01

Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

Comparison between rad-hard standard float zone (FZ) and magnetic Czochralski (MCZ) silicon diodes in radiotherapy electron beam dosimetry

Energy Technology Data Exchange (ETDEWEB)

Santos, T.C. dos; Goncalves, J.A.C.; Vasques, M.M.; Tobias, C.C.B. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes; Neves-Junior, W.F.P.; Haddad, C.M.K. [Hospital Sirio Libanes, Sao Paulo, SP (Brazil). Sociedade Beneficente de Senhoras; Harkonen, J. [Helsinki University of Technology (Denmark). Helsinki Inst. of Physics

2010-07-01

Full text. The use of semiconductor detectors has increased in radiotherapy practice since 1980s due to mainly their fast processing time, small sensitive volume and high relative sensitivity to ionizing radiation. Other major advantages of Si devices are excellent repeatability, good mechanical stability, high spatial resolution and the energy independence of mass collision stopping powers ratios (between silicon and water for electron beams with energy from 4 up to 20 MeV). However, ordinary silicon devices are very prone to radiation damage effects. In the last years, the development of radiation tolerant silicon detectors for High Energy Physics experiments has overcome this drawback. In this work we present the preliminary results obtained with a rad-hard epitaxial silicon diode as on-line clinical electron beam dosimeter. The diodes with 25 mm{sup 2} active area, were housed in a PMMA probe and connected, in a photovoltaic mode, to a Keithley 6517B electrometer. During all measurements, the diodes were held between PMMA plates, placed at Zref and centered in a radiation field of 10 cm x 10 cm, with the SSD kept at 100 cm. The devices dosimetric response was evaluated for 6, 9, 12, 15, 18 e 21 MeV electron beams from a Siemens KD 2 Radiotherapy Linear Accelerator, located at Sirio-Libanes Hospital. The radiation induced current in the diodes was registered as a function of the exposure time during 60 s for a fixed 300 MU. To study the short term repeatability, current signals were registered for the same radiation dose, for all energies. The dose-response of the diodes was achieved through the integration of the current signals as a function of the exposure time. The results obtained in the energy range of 6 up to 21 MeV evidenced that, for the same average dose rate of 5.0 cGy/s, the current signals are very stable and repeatable in both cases. For all energies, data shows good instantaneous repeatability with a percentage variation coefficient better than 2

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

International Nuclear Information System (INIS)

Lü Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting; Cai Shu-Jun; Lin Zhao-Jun

2014-01-01

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Third order mode laser diode: design of a twin photon source

International Nuclear Information System (INIS)

Ducci, S.; Berger, V.; Rossi, A. de; Ortiz, V.; Calligaro, M.; Vinter, B.; Nagle, J.; Berger, V.

2004-01-01

We demonstrate the lasing action on a third order waveguide mode in a laser diode. The AlGaAs heterostructure has been designed to achieve a parametric emission of photons pairs through modal phase matching. This device is very compact and does not generate coupling loss between the laser source and the non-linear waveguide. It is the first step on the way to design a twin photon micro-source. (A.C.)

A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Yakuphanoglu, F., E-mail: fyhanoglu@firat.edu.tr [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Shokr, F.S. [Physics Department, Faculty of Science & Arts, King Abdulaziz University, Rabigh (Saudi Arabia); Gupta, R.K., E-mail: ramguptamsu@gmail.com [Department of Chemistry and Kansas Polymer Research Center, Pittsburg State University, Pittsburg (United States); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Bin-Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, Riyadh (Saudi Arabia); Al-Turki, Yusuf [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah (Saudi Arabia); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt)

2015-11-25

Large quantities of gallium nitride (GaN) nanoparticles were successfully synthesized via a facile sol-gel approach. X-ray diffraction analysis confirms the polycrystalline nature of the GaN with hexagonal wurtzite structure and lattice constants a = 0.3189 nm and c = 0.5185 nm. The morphology of the GaN film was investigated by field emission scanning electron microscopy. The obtained results indicate that the synthesized GaN nanorods have an average length of around 60 nm and an average diameter of 23 nm. The optical band gap of the GaN film was obtained to be 3.4 eV. The gallium nitride/p-Si Schottky diode was fabricated by thermal evaporation technique on p-silicon. The current–voltage (I–V) characteristics of the fabricated diode was tested under dark and various light intensities. T The diode ideality factor and barrier height were computed using forward bias I–V characteristics of the diode and are found to be 1.66 and 0.53 eV, respectively. The obtained results suggest that the film preparation by sol gel method is fast and simple to prepare GaN based photodiode by according to metal organic deposition methods. - Highlights: • Facile method was used to synthesize GaN powder. • The Al/p-Si/GaN/Ag diode was fabricated using thermal evaporator technique. • Al/p-Si/GaN/Ag diode can be used as a photosensor for optoelectronic applications.

Self-error-rejecting photonic qubit transmission in polarization-spatial modes with linear optical elements

Science.gov (United States)

Jiang, YuXiao; Guo, PengLiang; Gao, ChengYan; Wang, HaiBo; Alzahrani, Faris; Hobiny, Aatef; Deng, FuGuo

2017-12-01

We present an original self-error-rejecting photonic qubit transmission scheme for both the polarization and spatial states of photon systems transmitted over collective noise channels. In our scheme, we use simple linear-optical elements, including half-wave plates, 50:50 beam splitters, and polarization beam splitters, to convert spatial-polarization modes into different time bins. By using postselection in different time bins, the success probability of obtaining the uncorrupted states approaches 1/4 for single-photon transmission, which is not influenced by the coefficients of noisy channels. Our self-error-rejecting transmission scheme can be generalized to hyperentangled n-photon systems and is useful in practical high-capacity quantum communications with photon systems in two degrees of freedom.

Operation and maintenance manual for diode performance analysis program DIODE0

International Nuclear Information System (INIS)

Boyer, W.B.

1977-03-01

This program computes diode performance parameters for the e beam fusion accelerators HYDRA, PROTO I and PROTO II. The program works in conjunction with other programs in the data acquisition facility library. It reads the input data produced by the Tekronix R7012 Transient Digitizers off the disc. It then computes and plots the diode corrected voltages, impedances, powers, and energies

Laser diode package with enhanced cooling

Science.gov (United States)

Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

2011-09-13

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

Science.gov (United States)

Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

2016-03-01

Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

Fabrication and properties of light-emitting diodes based on self-assembled multilayers of poly(phenylene vinylene)

Science.gov (United States)

Fou, A. C.; Onitsuka, O.; Ferreira, M.; Rubner, M. F.; Hsieh, B. R.

1996-05-01

Light-emitting diodes have been fabricated from self-assembled multilayers of poly(p-phenylene vinylene) (PPV) and two different polyanions; polystyrene sulfonic acid (SPS) and polymethacrylic acid (PMA). The type of polyanion used to assemble the multilayer thin films was found to dramatically influence the behavior and performance of devices fabricated with indium tin oxide and aluminum electrodes. Light-emitting devices fabricated from PMA/PPV multilayers were found to exhibit luminance levels in the range of 20-60 cd/m2, a thickness dependent turn-on voltage and classical rectifying behavior with rectification ratios greater than 105. In sharp contrast, the devices based on SPS/PPV exhibited near symmetric current-voltage curves, thickness independent turn-on voltages and much lower luminance levels. The significant difference in device behavior observed between these two systems is primarily due to a doping effect induced either chemically or electrochemically by the sulfonic acid groups of SPS. It was also found that the performance of these devices depends on the type of layer that is in contact with the Al top electrode thereby making it possible to manipulate device efficiency at the molecular level.

High power diode pumped solid state lasers

International Nuclear Information System (INIS)

Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

1992-01-01

Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

Powerful infrared emitting diodes

Directory of Open Access Journals (Sweden)

Kogan L. M.

2012-02-01

Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

Does Prigogine’s Non-linear Thermodynamics Support Popular Philosophical Discussions of Self-Organization?

Directory of Open Access Journals (Sweden)

Alexander Pechenkin

2015-10-01

Full Text Available The article is concerned with the philosophical talks which became popular in the 1980s and have kept their popularity till now–the philosophical essays about self-organization. The author attempts to find out as to which extent are these essays founded on the scientific theory to which they regularly refer, that is, Ilya Prigogine’s non-linear thermodynamics. The author insists that the equivalent of self-organization in Prigogine’s theoretical physics is the concept of dissipative structure. The concept of selforganization, as it is used in philosophical literature, presupposes a sequence of extrapolations, the first extrapolation being conducted by Prigogine and his coauthors. They became to use the concept of dissipative structure beyond the rigorous theory of this phenomenon. The subsequent step was that the scientific term “dissipative structure” was replaced by the vague concept “self-organization” in many popular and semi-popular books and papers. The author also emphasizes that by placing the concept of self-organization into the framework of philosophical concepts (the picture of the world, the ideals of scientific thought, the contemporary scientific revolution, etc. a philosopher conducts the extrapolation of extrapolation and comes to a kind of what Edmund Husserl called Weltanschauung (‘worldview’ philosophy.

Ion divergence in magnetically insulated diodes

International Nuclear Information System (INIS)

Slutz, S.A.; Lemke, R.W.; Pointon, T.D.; Desjarlais, M.P.; Johnson, D.J.; Mehlhorn, T.A.; Filuk, A.; Bailey, J.

1995-01-01

Magnetically insulated ion diodes are being developed to drive inertial confinement fusion. Ion beam microdivergence must be reduced to achieve the very high beam intensities required to achieve this goal. Three-dimensional particle-in-cell simulations indicate that instability induced fluctuations can produce significant ion divergence during acceleration. These simulations exhibit a fast growing mode early in time, which has been identified as the diocotron instability. The divergence generated by this mode is modest due to the relatively high frequency (>1GHz). Later, a low-frequency low-phase-velocity instability develops. This instability couples effectively to the ions, since the frequency is approximately the reciprocal of the ion transit time, and can generate unacceptably large ion divergences (>30 mrad). Linear stability theory reveals that this mode requires perturbations parallel to the applied magnetic field and is related to the modified two stream instability. Measurements of ion density fluctuations and energy-momentum correlations have confirmed that instabilities develop in ion diodes and contribute to the ion divergence. In addition, spectroscopic measurements indicate that the ions have a significant transverse temperature very close to the emission surface. Passive lithium fluoride (LiF) anodes have larger transverse beam temperatures than laser irradiated active sources. Calculations of source divergence expected from the roughness of LiF surfaces and the possible removal of this layer is presented

Diode laser irradiation of rat blood and its effect on hemoglobin and plasma

International Nuclear Information System (INIS)

Saad-El-Din, A.A.; El-Ahdaal, M.A.; Omran, M.F.

2002-01-01

Blood was exposed to diode laser irradiation of wavelength 830 nm and maximum powe of 31.4 MW, with exposure times 15, 30, 45 and 60 minutes. Hemoglobin IR spectra and X-ray crystallography, plasma Na + , K + , Ca + +. cholesterol concentrations and viscosity were measured. There were changes in hemoglobin amide groups as well as changes in the X-ray in hemoglobin structure. Decreases in both Na concentration and plasma viscosity occurred at 15 and 30 minutes of laser exposure. On increasing time to 45 and 60 minutes, the Na concentration and viscosity were increased. K, Ca and cholesterol concentration were decreased linearly with time. Na / K ratio was increased also with time of exposure. The results have been indicated that the diode laser affect the secondary structure of hemoglobin, membranes structures and plasma

Manufacture of axially insulated large-area diodes

International Nuclear Information System (INIS)

Ma Weiyi; Zhou Kungang; Wang Youtian; Zhang Dong; Shan Yusheng; Wang Naiyan

1999-01-01

The author describes the design and construction of the axially insulated large-area diodes used in the 'Heaven-1'. The four axially insulated large-area diodes are connected to the 10 ohm pulse transmission lines via the vacuum feed through tubes. The experimental results with the diodes are given. The diodes can steadily work at the voltage of 650 kV, and the diode current density is about 80 A per cm 2 with a pulse width of 220 ns. The electron beams with a total energy of 25 kJ are obtained

Self-Consistency Method to Evaluate a Linear Expansion Thermal Coefficient of Composite with Dispersed Inclusions

Directory of Open Access Journals (Sweden)

V. S. Zarubin

2015-01-01

Full Text Available The rational use of composites as structural materials, while perceiving the thermal and mechanical loads, to a large extent determined by their thermoelastic properties. From the presented review of works devoted to the analysis of thermoelastic characteristics of composites, it follows that the problem of estimating these characteristics is important. Among the thermoelastic properties of composites occupies an important place its temperature coefficient of linear expansion.Along with fiber composites are widely used in the technique of dispersion hardening composites, in which the role of inclusions carry particles of high-strength and high-modulus materials, including nanostructured elements. Typically, the dispersed particles have similar dimensions in all directions, which allows the shape of the particles in the first approximation the ball.In an article for the composite with isotropic spherical inclusions of a plurality of different materials by the self-produced design formulas relating the temperature coefficient of linear expansion with volume concentration of inclusions and their thermoelastic characteristics, as well as the thermoelastic properties of the matrix of the composite. Feature of the method is the self-accountability thermomechanical interaction of a single inclusion or matrix particles with a homogeneous isotropic medium having the desired temperature coefficient of linear expansion. Averaging over the volume of the composite arising from such interaction perturbation strain and stress in the inclusions and the matrix particles and makes it possible to obtain such calculation formulas.For the validation of the results of calculations of the temperature coefficient of linear expansion of the composite of this type used two-sided estimates that are based on the dual variational formulation of linear thermoelasticity problem in an inhomogeneous solid containing two alternative functional (such as Lagrange and Castigliano

A METHOD FOR SELF-CALIBRATION IN SATELLITE WITH HIGH PRECISION OF SPACE LINEAR ARRAY CAMERA

Directory of Open Access Journals (Sweden)

W. Liu

2016-06-01

Full Text Available At present, the on-orbit calibration of the geometric parameters of a space surveying camera is usually processed by data from a ground calibration field after capturing the images. The entire process is very complicated and lengthy and cannot monitor and calibrate the geometric parameters in real time. On the basis of a large number of on-orbit calibrations, we found that owing to the influence of many factors, e.g., weather, it is often difficult to capture images of the ground calibration field. Thus, regular calibration using field data cannot be ensured. This article proposes a real time self-calibration method for a space linear array camera on a satellite using the optical auto collimation principle. A collimating light source and small matrix array CCD devices are installed inside the load system of the satellite; these use the same light path as the linear array camera. We can extract the location changes of the cross marks in the matrix array CCD to determine the real-time variations in the focal length and angle parameters of the linear array camera. The on-orbit status of the camera is rapidly obtained using this method. On one hand, the camera’s change regulation can be mastered accurately and the camera’s attitude can be adjusted in a timely manner to ensure optimal photography; in contrast, self-calibration of the camera aboard the satellite can be realized quickly, which improves the efficiency and reliability of photogrammetric processing.

Visible-to-visible four-photon ultrahigh resolution microscopic imaging with 730-nm diode laser excited nanocrystals.

Science.gov (United States)

Wang, Baoju; Zhan, Qiuqiang; Zhao, Yuxiang; Wu, Ruitao; Liu, Jing; He, Sailing

2016-01-25

Further development of multiphoton microscopic imaging is confronted with a number of limitations, including high-cost, high complexity and relatively low spatial resolution due to the long excitation wavelength. To overcome these problems, for the first time, we propose visible-to-visible four-photon ultrahigh resolution microscopic imaging by using a common cost-effective 730-nm laser diode to excite the prepared Nd(3+)-sensitized upconversion nanoparticles (Nd(3+)-UCNPs). An ordinary multiphoton scanning microscope system was built using a visible CW diode laser and the lateral imaging resolution as high as 161-nm was achieved via the four-photon upconversion process. The demonstrated large saturation excitation power for Nd(3+)-UCNPs would be more practical and facilitate the four-photon imaging in the application. A sample with fine structure was imaged to demonstrate the advantages of visible-to-visible four-photon ultrahigh resolution microscopic imaging with 730-nm diode laser excited nanocrystals. Combining the uniqueness of UCNPs, the proposed visible-to-visible four-photon imaging would be highly promising and attractive in the field of multiphoton imaging.

Enhanced vbasis laser diode package

Science.gov (United States)

Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

2014-08-19

A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

OpenAIRE

Cappuccio, Joseph C., Jr.

1988-01-01

Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

Diode lasers: From laboratory to industry

Science.gov (United States)

Nasim, Hira; Jamil, Yasir

2014-03-01

The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

Science.gov (United States)

Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M; Yu, Edward T; Lee, Jack C

2014-02-12

We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

Studies of cold protection diodes

International Nuclear Information System (INIS)

Carcagno, R.; Zeigler, J.

1990-01-01

The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current IV measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 14 refs., 8 figs., 2 tabs

Studies of cold protection diodes

International Nuclear Information System (INIS)

Carcagno, R.; Zeigler, J.

1990-03-01

The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current 4 measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 11 refs., 8 figs., 2 tabs

Effect of defects on electrical properties of 4H-SiC Schottky diodes

International Nuclear Information System (INIS)

Ben Karoui, M.; Gharbi, R.; Alzaied, N.; Fathallah, M.; Tresso, E.; Scaltrito, L.; Ferrero, S.

2008-01-01

Most of power electronic circuits use power semiconductor switching devices which ideally present infinite resistance when off, zero resistance when on, and switch instantaneously between those two states. Switches and rectifiers are key components in power electronic systems, which cover a wide range of applications, from power transmission to control electronics and power supplies. Typical power switching devices such as diodes, thyristors, and transistors are based on a monocrystalline silicon semiconductor or silicon carbide. Silicon is less expensive, more widely used, and a more versatile processing material than silicon carbide. The silicon carbide (SiC) has properties that allow devices with high power voltage rating and high operating temperatures. The technology overcomes some crystal growth obstacles, by using the hydrogen in the fabrication of 4H-SiC wafers. The presence of structural defects on 4H-SiC wafers was shown by different techniques such as optical microscopy and scanning electron microscopy. The presence of different SiC polytypes inclusions was found by Raman spectroscopy. Schottky diodes were realized on investigated wafers in order to obtain information about the correlation between those defects and electrical properties of the devices. The diodes with voltage breakdown as 600 V and ideality factor as 1.05 were obtained and characterized after packaging

Low Temperature Hydrothermal Growth of ZnO Nanorod Films for Schottky Diode Application

International Nuclear Information System (INIS)

Singh, Shaivalini; Park, Si-Hyun

2016-01-01

The purpose of this research is to report on the fabrication and characterizations of Pd/ZnO nanorod-based Schottky diodes for optoelectronic applications. ZnO nanorods (NRs) were grown on silicon (Si) substrates by a two step hydrothermal method. In the first step, a seed layer of pure ZnO was deposited from a solution of zinc acetate and ethyl alcohol, and then in the second step, the main growth of the ZnO NRs was done over the seed layer. The structural morphology and optical properties of the ZnO NR films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. The electrical characterization of the Pd/ZnO NR contacts was studied using a current-voltage (I-V) tool. The ZnO NR films exhibited a wurtzite ZnO structure,and the average length of the ZnO NRs were in the range of 750 nm to 800 nm. The values of ideality factor, turn-on voltage and reverse saturation current were calculated from the I-V characteristics of Pd/ZnO NR-based Schottky diodes. The study demonstrates that Pd/ZnO NR Schottky contacts fabricated by a simple and inexpensive method can be used as a substitute for conventional Schottky diodes for optoelectronic applications.

Demonstration of GaAsSb/InAs nanowire backward diodes grown using position-controlled vapor-liquid-solid method

Science.gov (United States)

Kawaguchi, Kenichi; Takahashi, Tsuyoshi; Okamoto, Naoya; Sato, Masaru

2018-02-01

p-GaAsSb/n-InAs type-II nanowire (NW) diodes were fabricated using the position-controlled vapor-liquid-solid growth method. InAs and GaAsSb NW segments were grown vertically on GaAs(111)B substrates with the assistance of Au catalysts. Transmission electron microscopy-energy-dispersive X-ray spectroscopy analysis revealed that the GaAsSb segments have an Sb content of 40%, which is sufficient to form a tunnel heterostructure. Scanning capacitance microscope images clearly indicated the formation of a p-n junction in the NWs. Backward diode characteristics, that is, current flow toward negative bias originating from a tunnel current and current suppression toward positive bias by a heterobarrier, were demonstrated.

Impedance of an annular-cathode indented-anode electron diode terminating a coaxial magnetically insulated transmission line

International Nuclear Information System (INIS)

Sanford, T.W.L.; Poukey, J.W.; Wright, T.P.; Bailey, J.; Heath, C.E.; Mock, R.; Spence, P.W.; Fockler, J.; Kishi, H.

1988-01-01

The impedance of a diode having an annular cathode and indented anode that terminates a coaxial MITL (magnetically insulated transmission line) is measured and compared with a semiempirical model developed from calculations made using the magIc code. The measurements were made on the 16-Ω electron accelerator HELIA (high-energy linear induction accelerator) operating at 3 MV. The model agrees with the measurements within the 10% measuring error and shows that the diode operates in either a load- or line-dominated regime depending on AK (anode-cathode) gap spacing. In the load-dominated regime, which corresponds to small AK gaps, the diode impedance is controlled by an effective anode-cathode gap, and the flow is approximately axial. In the line-dominated regime, which corresponds to large AK gaps, the impedance is independent of the AK gap and corresponds to the impedance associated with the minimum current solution of the MITL, with the flow becoming more radial as the AK gap is increased

Coupling of an applied field magnetically insulated ion diode to a high power magnetically insulated transmission line system

International Nuclear Information System (INIS)

Maenchen, J.E.

1983-01-01

The coupling of energy from a high power pulsed accelerator through a long triplate magnetically insulated transmission line (MITL) in vacuum to an annular applied magnetic field insulated extraction ion diode is examined. The narrow power transport window and the wave front erosion of the MITL set stringent impedance history conditions on the diode load. A new ion diode design developed to satisfy these criteria with marginal electron insulation is presented. The LION accelerator is used to provide a positive polarity 1.5 MV, 350 kA, 40 ns FWHM pulse with a 30 kA/ns current rate from a triplate MITL source. A transition converts the triplate into a cylindrical cross section which flares into the ion diode load. Extensive current and voltage measurements performed along this structure and on the extracted ion beam provide conclusive evidence that the self insulation condition of the MITL is maintained in the transition by current loss alone. The ion diode utilizes a radial magnetic field between a grounded cathode annular emission tip and a disk anode. A 50 cm 2 dielectric/metal anode area serves as the ion plasma source subject to direct electron bombardment from the opposing cathode tip under marginal magnetic insulation conditions. The ions extracted cross the radial magnetic field and exit the diode volume as an annular cross section beam of peak current about 100 kA. The diode current gradually converts from the initial electron flow to nearly 100% ion current after 30 ns, coupling 60% of the diode energy into ions

Regimes of magnetic insulation in a high-current diodes and transmission lines of conical configuration

International Nuclear Information System (INIS)

Vasilenko, O.I.; Voronin, V.S.; Lebedev, A.N.

1977-01-01

A self-consistent kinematic model of a steady-state electron flow between two electrodes of a high-current diode has been considered with a tapered configuration. All the electrons have presumably been released from the cathode with a zero velocity and some portion of the total current flows along the cathode surface as the conduction current. A set of volt-ampere characteristics has been obtained for the tapered diode with a flat anode. At a preset cathode current the thickness and current of the electron layer increase as the voltage goes up. The considered kinematic model substantiates and specifies a model of the Brillouin parapotential flow

Spin-current diode with a ferromagnetic semiconductor

International Nuclear Information System (INIS)

Sun, Qing-Feng; Xie, X. C.

2015-01-01

Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

Diode, transistor & fet circuits manual

CERN Document Server

Marston, R M

2013-01-01

Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

Online correction of scanning probe microscopes with pixel accuracy

DEFF Research Database (Denmark)

Dirscherl, Kai

2000-01-01

of 10 nm and an opening angle of 30.0 °. Even atomic resolution can be achieved. The scan movement of the tip is not linear however. This is caused by the propelling device of the SPM for the scan motion - a piezoelectric ceramic. The two major non-linear responses o f the piezo to the applied control....... The algorithm typically contains 5 - 7 parameters which have to be calibrated manually. Still, non-linear errors remain in the order of 1-2%. One pixel in a 512x 512 image corresponds to 0.2% per direction. This goal of measurement accuracy i s reached with the algorithm developed in this thesis. Three...... different SPM are analyzed for their non-linearity. Two commercial tube sc anners are applied with a maximum scan range in x and y of 40.0 µm and 160.0 µm as well as one specially designed stack scanner with a maximum range of 5.0 µm. For the tube scanners, a 1-dimensional line pattern with a reference...

Self-broadening coefficients and positions of acetylene around 1.533 μm studied by high-resolution diode laser absorption spectrometry

International Nuclear Information System (INIS)

Li Jingsong; Durry, Georges; Cousin, Julien; Joly, Lilian; Parvitte, Bertrand; Zeninari, Virginie

2010-01-01

The self-broadening coefficients of acetylene at room temperature have been measured for 10 lines in the P branch of the ν 1 +ν 3 (Σ u + )-0(Σ g + ) bands of 12 C 2 H 2 and 13 C 12 CH 2 near 1.533 μm, using a high resolution tunable diode laser spectrometer developed for the Martian space mission PHOBOS-Grunt. The collisional widths are obtained by fitting each recorded line with the Voigt profile as well as the Rautian profile accounting for the collisional Dicke narrowing effect. The standard Voigt model provides slightly smaller broadening coefficients than the Rautian model. Our data are thoroughly compared to the main atmospheric molecule database HITRAN and previous values in various bands of acetylene. Moreover, it is worth noting that a large number of new transitions not listed in the latest HITRAN08 were measured and identified for the first time.

Distance measurement using frequency scanning interferometry with mode-hoped laser

Science.gov (United States)

Medhat, M.; Sobee, M.; Hussein, H. M.; Terra, O.

2016-06-01

In this paper, frequency scanning interferometry is implemented to measure distances up to 5 m absolutely. The setup consists of a Michelson interferometer, an external cavity tunable diode laser, and an ultra-low expansion (ULE) Fabry-Pérot (FP) cavity to measure the frequency scanning range. The distance is measured by acquiring simultaneously the interference fringes from, the Michelson and the FP interferometers, while scanning the laser frequency. An online fringe processing technique is developed to calculate the distance from the fringe ratio while removing the parts result from the laser mode-hops without significantly affecting the measurement accuracy. This fringe processing method enables accurate distance measurements up to 5 m with measurements repeatability ±3.9×10-6 L. An accurate translation stage is used to find the FP cavity free-spectral-range and therefore allow accurate measurement. Finally, the setup is applied for the short distance calibration of a laser distance meter (LDM).

12 MeV, 4.3 kW electron linear accelerator irradiation application

International Nuclear Information System (INIS)

Hang Desheng; Lai Qiji

2000-01-01

Characteristics of an electron linear accelerator, which has 6-12 MeV energy, 4.2 kW average beam power is introduced. Results show that it has advantages on improving the characteristics of semiconductor devices such as diodes, triodes, SCR, preventing garlic from sprout, preservation of food, and so on

Focusing experiments with light ion diodes

International Nuclear Information System (INIS)

Johnson, D.L.

1978-01-01

A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

Photosensitive and temperature-dependent I–V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Long, Hao; Ai, Lei [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); Li, Songzhan [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei 430073 (China); Huang, Huihui; Mo, Xiaoming; Wang, Haoning; Chen, Zhao; Liu, Yuping [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); Fang, Guojia, E-mail: gjfang@whu.edu.cn [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China)

2014-05-01

Highlights: • A p-NiO film/n-ZnO nanorod array heterojunction was prepared. • The heterojunction shows good morphology and crystal properties. • The diode exhibits excellent rectifying behavior. • The diode exhibits strong temperature dependent I–V properties. • The hybrid diode shows good photosensitivity under the ultraviolet irradiation. - Abstract: A p-NiO film/n-ZnO nanorod (NR) array heterojunction was prepared by deposition of NiO film on ZnO NRs using radio-frequency reactive magnetron sputtering. The well-aligned ZnO NRs were fabricated by a simple and economic hydrothermal method on a ZnO:Al-coated glass substrate. Good morphology and crystal properties of the fabricated ZnO NRs and NiO film were confirmed by scanning electron microscopy and X-ray diffraction. The p–n heterojunction exhibits excellent rectifying behaviour and strong temperature-dependent current–voltage properties in the range from −50 to 80 °C. The hybrid NR heterojunction diode shows good photosensitivity under the irradiation of 365 nm ultraviolet light. These results present potential applications in future microelectronic devices based on NiO films and the one-dimensional ZnO nanomaterials.

A comparative study of the work involved in measuring profiles using ion chambers, a linear diode array and film

International Nuclear Information System (INIS)

Rykers, K.L.; RMIT University, Melbourne, VIC; Royal North Shore Hospital, St Leonards, NSW; Geso, M.; Brown, G.M.; Olilver, L.D.

1996-01-01

Full text: The usefulness of film to perform dosimetric measurement is a topic often discussed and not clearly agreed upon. While single point measurement detectors give consistent and reliable results for physically wedged fields they cannot be easily used to measure intensity modulated fields. In this work a method of using film to measure profiles for dynamically wedged (DW) fields is presented. The method of positioning film for the subsequent generation of a conversion function to allow for the variation in films' response with energy is outlined. Furthermore, the profiles determined by film measurement are compared with those measured with single point measurement detector and an array of silicon diodes. Both Leavitt et. al. 8 and Weber et. al. 7 have reported on the successful use of the linear diode array (LDA) in measuring dynamic wedge data. This claim will be investigated. The film used in this work was Kodak X-Omat V. The solid water was RW3 with high water equivalency in the range from 137 CS to 50 MV for photons and electrons. All films were processed in an automatic processor. Both the Wellhoefer and the Scanditronix RFA 300 densitometers were used to take film readings. Wedged field and open field profiles measurements were taken in water using both the Wellhoefer IC-10 chamber, the Scanditronix RFA 300 RK chamber and the Scanditronix LDA . The energy investigated was 6 MV at 1.5, 5.0, 10.0, 15.0 and 20.0 cm for a Varian 2100C machine. More consistent density readings were obtained when films were processed with the edge of the film that was parallel to the beam axis was fed into the processor first; rather than when the beam incident edge was fed into the processor first. Comparing the position of the central axis (CAX) of open films from the geometric method developed in this work to the software determined CAX (as available with the Wellhoefer software), it was found that the difference in CAX positions varied between -0.03 to +0.04 cm at 2.5 cm

Collapse transition of self-avoiding walks on a square lattice in the bulk and near a linear wall: The universality classes of the θ and θ' points

International Nuclear Information System (INIS)

Chang, I.; Meirovitch, H.

1993-01-01

Using the scanning method we study by extensive simulations the θ transition of self-avoiding walks with nearest-neighbor attractions in the bulk and near a linear wall on a square lattice. Consistent results for the two models are obtained for the radius of gyration, but not for the end-to-end distance. Our results for the exponents ν and γ agree with those derived by Duplantier and Saleur [Phys. Rev. Lett. 59, 539 (1987)] for the θ' model. However, our results for the crossover exponent φ (which constitute upper bounds for the correct value) are significantly larger than the value of φ(θ'). At the ordinary point our result for γ 1 is larger (even though not much) than the value suggested by Vanderzande, Stella, and Seno [Phys. Rev. Lett. 67, 2757 (1991)] for the θ' model

Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography

Directory of Open Access Journals (Sweden)

Kui Wu

2013-09-01

Full Text Available The InGaN multiple quantum well light-emitting diodes (LEDs with different sizes of indium-tin-oxide (ITO nanobowl photonic crystal (PhC structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP of PhC LEDs (at 350 mA has been enhanced by 63.5% and the emission divergence exhibits a 28.8° reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD has also been performed for light extraction and emission characteristics, which is consistent with the experimental results.

Quaternary InGaAsSb Thermophotovoltaic Diodes

International Nuclear Information System (INIS)

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-01-01

In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

Scanning transmission ion microscopy on Fudan SPM facility

International Nuclear Information System (INIS)

Li Yongqiang; Shen Hao; Zheng Yi; Li Xinyi; Liu Bo; Satoh Takahiro

2011-01-01

In this paper, we report a novel measurement system based on the development of Fudan Scanning Proton Microscopy (SPM) facility. By using Si-PIN diode(Hamamatsu S1223-01) detector, scanning transmission ion microscopy (STIM) measurement system has been set up. It can provide density and structural images with high probing efficiency and non-destruction by utilizing the energy loss of high energy (MeV) and focused ions penetrating through a thin sample. STIM measurement is able to map the density distribution of organic elements which mostly compose biology materials, such information can not be detected by using conventional Be-windowed Si (Li) X-ray detector in Particle Induced X-ray Emission (PIXE) technique. The spatial resolution capability of STIM is higher than PIXE technique at same accelerator status. As a result of STIM measurement, Paramecium attached on the top of Kapton tube was measured by STIM. (authors)

Third-order linearization for self-beating filtered microwave photonic systems using a dual parallel Mach-Zehnder modulator.

Science.gov (United States)

Pérez, Daniel; Gasulla, Ivana; Capmany, José; Fandiño, Javier S; Muñoz, Pascual; Alavi, Hossein

2016-09-05

We develop, analyze and apply a linearization technique based on dual parallel Mach-Zehnder modulator to self-beating microwave photonics systems. The approach enables broadband low-distortion transmission and reception at expense of a moderate electrical power penalty yielding a small optical power penalty (<1 dB).

Fourier-based reconstruction via alternating direction total variation minimization in linear scan CT

International Nuclear Information System (INIS)

Cai, Ailong; Wang, Linyuan; Yan, Bin; Zhang, Hanming; Li, Lei; Xi, Xiaoqi; Li, Jianxin

2015-01-01

In this study, we consider a novel form of computed tomography (CT), that is, linear scan CT (LCT), which applies a straight line trajectory. Furthermore, an iterative algorithm is proposed for pseudo-polar Fourier reconstruction through total variation minimization (PPF-TVM). Considering that the sampled Fourier data are distributed in pseudo-polar coordinates, the reconstruction model minimizes the TV of the image subject to the constraint that the estimated 2D Fourier data for the image are consistent with the 1D Fourier transform of the projection data. PPF-TVM employs the alternating direction method (ADM) to develop a robust and efficient iteration scheme, which ensures stable convergence provided that appropriate parameter values are given. In the ADM scheme, PPF-TVM applies the pseudo-polar fast Fourier transform and its adjoint to iterate back and forth between the image and frequency domains. Thus, there is no interpolation in the Fourier domain, which makes the algorithm both fast and accurate. PPF-TVM is particularly useful for limited angle reconstruction in LCT and it appears to be robust against artifacts. The PPF-TVM algorithm was tested with the FORBILD head phantom and real data in comparisons with state-of-the-art algorithms. Simulation studies and real data verification suggest that PPF-TVM can reconstruct higher accuracy images with lower time consumption

Stability and linearity control of spectrometric channels of the Cherenkov counters using controllable units

International Nuclear Information System (INIS)

Kollar, D.; Kollarova, L.; Khorvat, P.

1976-01-01

A system is elaborated to control stability and linearity of the Cherenkov counter spectrometric channels in an experiment on a magnetic monopole search. Linearity of a light characteristic of a photoelectric multiplier is checked with the help of the calibrated light-strikings of light emitting diodes with flare intensity adjusted by controlling generator voltage across the mercury body. A program algorithm is presented for checking stability and linearity of the Cherenkov counter spectrometric channels which helps to consider the fatigue effects of the photoelectric multiplier resulting from the considerable loads

Monolayer WS{sub 2} crossed with an electro-spun PEDOT-PSS nano-ribbon: Fabricating a Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Ortiz, Deliris N.; Vedrine, Josee [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00791 (United States); Pinto, Nicholas J., E-mail: nicholas.pinto@upr.edu [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00791 (United States); Naylor, Carl H.; Charlie Johnson, A.T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104 (United States)

2016-12-15

Highlights: • First report on a Schottky diode formed from monolayer WS{sub 2} and PEDOT-PSSA nano-ribbon. • Straightforward and unique fabrication technique. • Diode operation is stable in air. - Abstract: WS{sub 2} and PEDOT-PSS were individually characterized with the goal of analyzing charge transport across a hetero-junction formed by these two materials. In thermal equilibrium electron flow from the WS{sub 2} conduction band into the polymer LUMO level leads to band bending that creates a potential barrier preventing further current. The measured current-voltage (I{sub DS}-V{sub DS}) curve across the hetero-junction was non-linear and asymmetric similar to a diode, with a turn-on voltage of 1.4 V and a rectification ratio of 12. The device I–V data were analyzed using the standard thermionic emission model of a Schottky junction and yielded an ideality parameter of 1.9 and a barrier height of 0.58 eV. This facile technique is the first report on a nano-diode fabricated using WS{sub 2} and PEDOT-PSS, opening up the possibility of extending this work to include other layered transition metal dichalcogenides and conducting polymers.

1 CW green self-frequency-doubled Yb:YAl3(BO3)4 laser

International Nuclear Information System (INIS)

Dekker, P.; Dawes, J.; Wang, P.; Piper, J.

2000-01-01

Full text: We report 1.1 W continuous wave (CW) green output from a 977nm diode-end-pumped self-frequency-doubled Yb:YAB laser, with a diode-to-green optical conversion efficiency of 10%. Wavelength tunability from 513-546nm has been demonstrated

Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

Energy Technology Data Exchange (ETDEWEB)

Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

2014-06-16

The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

Science.gov (United States)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2018-04-01

Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

Fabrication and characterization of NiO based metal−insulator−metal diode using Langmuir-Blodgett method for high frequency rectification

Directory of Open Access Journals (Sweden)

Ibrahim Azad

2018-04-01

Full Text Available Thin film metal–insulator–metal (MIM diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB technique. The nickel stearate (NiSt LB precursor film was deposited on glass, silicon (Si, ITO glass and gold coated silicon substrates. The photodesorption (UV exposure and the thermodesorption (annealing at 100 °C and 350 °C methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni on the NiO film, all on a gold (Au plated silicon (Si substrate. The current (I-voltage (V characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ∼100 ohms (at a bias voltage of 0.60 V, and the rectification ratio was about 22 (for a signal voltage of ±200 mV. At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

Atomic spectroscopy with diode lasers

International Nuclear Information System (INIS)

Tino, G.M.

1994-01-01

Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

Thermometric characteristics of silicon semiconductor diodes

International Nuclear Information System (INIS)

Bezverkhnyaya, N.S.; Vasil'ev, L.M.; Dmitrevskij, Yu.P.; Mel'nik, Yu.M.

1975-01-01

To substantiate the feasibility of using silicon diodes made by the Soviet industry as detectors of temperature in the 15 - 300 K range, 25 different types of silicon diodes have been investigated. The results obtained for the thermometric characteristics of the diodes are presented in tabular form. It is shown that a stability of readings of up to 0.05 deg can be obtained [ru

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

International Nuclear Information System (INIS)

Guellue, O.; Tueruet, A.

2011-01-01

Research highlights: → This work proposes that DNA molecules should be considered, among other candidates, as a potential organic thin film for metal-interface layer-semiconductor devices. → We successfully fabricated Al/DNA/p-Si device with interlayer by a simple cast method. → The temperature is found to significantly effect the electrical properties of the Al/DNA/p-Si device. → The facts: (i) that the technology of the fabrication of a Al/DNA/p-Si Schottky diode much simpler and economical than that for the Si p-n junction and (ii) the sensibility of the Al/DNA/p-Si Schottky diode as temperature sensor is 42% higher than that of a Si p-n junction, indicate that the Al/DNA/p-Si Schottky diode is a good alternative as temperature sensor. - Abstract: The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 ± 0.02 and 1.70 ± 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height Φ b determined from the I-V measurements was 0.75 ± 0.01 eV at 300 K and decreases to 0.61 ± 0.01 eV at 200 K. The forward voltage-temperature (V F -T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (I F ) in the range 20 nA-6 μA. The V F -T characteristics were linear for three activation currents in the diode. From the V F -T characteristics at 20 nA, 100 nA and 6 μA, the values of the temperature coefficients of the forward bias voltage (dV F /dT) for the diode were determined as -2.30 mV K -1 , -2.60 mV K -1 and -3.26 mV K -1 with a standard error of 0.05 mV K -1 , respectively.

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

Energy Technology Data Exchange (ETDEWEB)

Guellue, O., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, 72060 Batman (Turkey); Osmaniye Korkut Ata University, Science and Art Faculty, Department of Physics, 80000 Osmaniye (Turkey); Tueruet, A. [Atatuerk University, Science Faculty, Department of Physics, 25240 Erzurum (Turkey)

2011-01-21

Research highlights: > This work proposes that DNA molecules should be considered, among other candidates, as a potential organic thin film for metal-interface layer-semiconductor devices. > We successfully fabricated Al/DNA/p-Si device with interlayer by a simple cast method. > The temperature is found to significantly effect the electrical properties of the Al/DNA/p-Si device. > The facts: (i) that the technology of the fabrication of a Al/DNA/p-Si Schottky diode much simpler and economical than that for the Si p-n junction and (ii) the sensibility of the Al/DNA/p-Si Schottky diode as temperature sensor is 42% higher than that of a Si p-n junction, indicate that the Al/DNA/p-Si Schottky diode is a good alternative as temperature sensor. - Abstract: The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 {+-} 0.02 and 1.70 {+-} 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height {Phi}{sub b} determined from the I-V measurements was 0.75 {+-} 0.01 eV at 300 K and decreases to 0.61 {+-} 0.01 eV at 200 K. The forward voltage-temperature (V{sub F}-T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (I{sub F}) in the range 20 nA-6 {mu}A. The V{sub F}-T characteristics were linear for three activation currents in the diode. From the V{sub F}-T characteristics at 20 nA, 100 nA and 6 {mu}A, the values of the temperature coefficients of the forward bias voltage (dV{sub F}/dT) for the diode were determined as -2.30 mV K{sup -1}, -2.60 mV K{sup -1} and -3.26 mV K{sup -1} with a standard error of 0.05 mV K{sup -1}, respectively.

Microstructural characterization of Ni-based self-fluxing alloy after selective surface-engineering using diode laser

Science.gov (United States)

Chun, Eun-Joon; Park, Changkyoo; Nishikawa, Hiroshi; Kim, Min-Su

2018-06-01

The microstructural characterization of thermal-sprayed Ni-based self-fluxing alloy (Metco-16C®) after laser-assisted homogenization treatment was performed. To this end, a high-power diode laser system was used. This supported the real-time control of the target homogenization temperature at the substrate surface. Non-homogeneities of the macrosegregation of certain elements (C and Cu) and the local concentration of Cr-based carbides and borides in certain regions in the as-sprayed state could be enhanced with the application of homogenization. After homogenization at 1423 K, the hardness of the thermal-sprayed layer was found to have increased by 1280 HV from the as-sprayed state (750 HV). At this homogenization temperature, the microstructure of the thermal-sprayed layer consisted of a lamellar structuring of the matrix phase (austenite and Ni3Si) with fine (<5 μm) carbides and borides (the rod-like phase of Cr5B3, the lumpy phase of M23C6, and the extra-fine phase of M7C3). Despite the formation of several kinds of carbides and borides during homogenization at 1473 K, the lowest hardness level was found to be less than that of the as-sprayed state, because of the liquid-state homogenization treatment without formation of lamellar structuring between austenite and Ni3Si.

Efficiency of broadband terahertz rectennas based on self-switching nanodiodes

Science.gov (United States)

Briones, Edgar; Cortes-Mestizo, Irving E.; Briones, Joel; Droopad, Ravindranath; Espinosa-Vega, Leticia I.; Vilchis, Heber; Mendez-Garcia, Victor H.

2017-04-01

The authors investigate the efficiency of a series of broadband rectennas designed to harvest the free-propagating electromagnetic energy at terahertz frequencies. We analyze by simulations the case of self-complementary square- and Archimedean-spiral antennas coupled to L-shaped self-switching diodes (L-SSDs). First, the geometry (i.e., the width and length of the channel) of the L-SSD was optimized to obtain a remarkable diode-like I-V response. Subsequently, the optimized L-SSD geometry was coupled to both types of spiral antennas and their characteristic impedance was studied. Finally, the energy conversion efficiency was evaluated for both rectenna architectures.

Microcontact printing of self-assembled monolayers to pattern the light-emission of polymeric light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Brondijk, J.J.; Li, X.; Akkerman, H.B.; Blom, P.W.M.; Boer, B. de [University of Groningen, Molecular Electronics, Zernike Institute for Advanced Materials, Groningen (Netherlands)

2009-04-15

By patterning a self-assembled monolayer (SAM) of thiolated molecules with opposing dipole moments on a gold anode of a polymer light-emitting diode (PLED), the charge injection and, therefore, the light-emission of the device can be controlled with a micrometer-scale resolution. Gold surfaces were modified with SAMs based on alkanethiols and perfluorinated alkanethiols, applied by microcontact printing, and their work functions have been measured. The molecules form a chemisorbed monolayer of only {proportional_to}1.5 nm on the gold surface, thereby locally changing the work function of the metal. Kelvin probe measurements show that the local work function can be tuned from 4.3 to 5.5 eV, which implies that this anode can be used as a hole blocking electrode or as a hole injecting electrode, respectively, in PLEDs based on poly(p-phenylene vinylene) (PPV) derivatives. By microcontact printing of SAMs with opposing dipole moments, the work function was locally modified and the charge injection in the PLED could be controlled down to the micrometer length scale. Consequently, the local light-emission exhibits a high contrast. Microcontact printing of SAMs is a simple and inexpensive method to pattern, with micrometer resolution, the light-emission for low-end applications like static displays. (orig.)

Microcontact printing of self-assembled monolayers to pattern the light-emission of polymeric light-emitting diodes

Science.gov (United States)

Brondijk, J. J.; Li, X.; Akkerman, H. B.; Blom, P. W. M.; de Boer, B.

2009-04-01

By patterning a self-assembled monolayer (SAM) of thiolated molecules with opposing dipole moments on a gold anode of a polymer light-emitting diode (PLED), the charge injection and, therefore, the light-emission of the device can be controlled with a micrometer-scale resolution. Gold surfaces were modified with SAMs based on alkanethiols and perfluorinated alkanethiols, applied by microcontact printing, and their work functions have been measured. The molecules form a chemisorbed monolayer of only ˜1.5 nm on the gold surface, thereby locally changing the work function of the metal. Kelvin probe measurements show that the local work function can be tuned from 4.3 to 5.5 eV, which implies that this anode can be used as a hole blocking electrode or as a hole injecting electrode, respectively, in PLEDs based on poly( p-phenylene vinylene) (PPV) derivatives. By microcontact printing of SAMs with opposing dipole moments, the work function was locally modified and the charge injection in the PLED could be controlled down to the micrometer length scale. Consequently, the local light-emission exhibits a high contrast. Microcontact printing of SAMs is a simple and inexpensive method to pattern, with micrometer resolution, the light-emission for low-end applications like static displays.

Near-field microscopy of waveguide architectures of InGaN/GaN diode lasers

Science.gov (United States)

Friede, Sebastian; Tomm, Jens W.; Kühn, Sergei; Hoffmann, Veit; Wenzel, Hans; Weyers, Markus

2016-11-01

Waveguide (WG) architectures of 420 nm emitting InGaN/GaN diode lasers are analyzed by photoluminescence and photocurrent spectroscopy using a nearfield scanning optical microscope that scans along their front facets. The components of the ‘optical active cavity’, quantum wells, WGs, and cladding layers are individually inspected with a spatial resolution of ∼100 nm. Separate analysis of the p- and n-sections of the WG was achieved, and reveals defect levels in the p-part. Moreover, it is demonstrated that the homogeneity of the n-WG section directly affects the quantum wells that are grown on top of this layer. Substantially increased carrier capture efficiencies into InGaN/GaN-WGs compared to GaN-WGs are demonstrated.

Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

2012-02-29

The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

Optical surfacing via linear ion source

International Nuclear Information System (INIS)

Wu, Lixiang; Wei, Chaoyang; Shao, Jianda

2017-01-01

We present a concept of surface decomposition extended from double Fourier series to nonnegative sinusoidal wave surfaces, on the basis of which linear ion sources apply to the ultra-precision fabrication of complex surfaces and diffractive optics. The modified Fourier series, or sinusoidal wave surfaces, build a relationship between the fabrication process of optical surfaces and the surface characterization based on power spectral density (PSD) analysis. Also, we demonstrate that the one-dimensional scanning of linear ion source is applicable to the removal of mid-spatial frequency (MSF) errors caused by small-tool polishing in raster scan mode as well as the fabrication of beam sampling grating of high diffractive uniformity without a post-processing procedure. The simulation results show that optical fabrication with linear ion source is feasible and even of higher output efficiency compared with the conventional approach.

Optical surfacing via linear ion source

Energy Technology Data Exchange (ETDEWEB)

Wu, Lixiang, E-mail: wulx@hdu.edu.cn [Key Lab of RF Circuits and Systems of Ministry of Education, Zhejiang Provincial Key Lab of LSI Design, Microelectronics CAD Center, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou (China); Wei, Chaoyang, E-mail: siomwei@siom.ac.cn [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Shao, Jianda, E-mail: jdshao@siom.ac.cn [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

2017-04-15

We present a concept of surface decomposition extended from double Fourier series to nonnegative sinusoidal wave surfaces, on the basis of which linear ion sources apply to the ultra-precision fabrication of complex surfaces and diffractive optics. The modified Fourier series, or sinusoidal wave surfaces, build a relationship between the fabrication process of optical surfaces and the surface characterization based on power spectral density (PSD) analysis. Also, we demonstrate that the one-dimensional scanning of linear ion source is applicable to the removal of mid-spatial frequency (MSF) errors caused by small-tool polishing in raster scan mode as well as the fabrication of beam sampling grating of high diffractive uniformity without a post-processing procedure. The simulation results show that optical fabrication with linear ion source is feasible and even of higher output efficiency compared with the conventional approach.

Bulk-Like Electrical Properties Induced by Contact-Limited Charge Transport in Organic Diodes: Revised Space Charge Limited Current

KAUST Repository

Xu, Guangwei

2018-02-22

Charge transport governs the operation and performance of organic diodes. Illuminating the charge-transfer/transport processes across the interfaces and the bulk organic semiconductors is at the focus of intensive investigations. Traditionally, the charge transport properties of organic diodes are usually characterized by probing the current–voltage (I–V) curves of the devices. However, to unveil the landscape of the underlying potential/charge distribution, which essentially determines the I–V characteristics, still represents a major challenge. Here, the electrical potential distribution in planar organic diodes is investigated by using the scanning Kelvin probe force microscopy technique, a method that can clearly separate the contact and bulk regimes of charge transport. Interestingly, by applying to devices based on novel, high mobility organic materials, the space-charge-limited-current-like I–V curves, which are previously believed to be a result of the bulk transport, are surprisingly but unambiguously demonstrated to be caused by contact-limited conduction. A model accounting is developed for the transport properties of both the two metal/organic interfaces and the bulk. The results indicate that pure interface-dominated transport can indeed give rise to I–V curves similar to those caused by bulk transport. These findings provide a new insight into the charge injection and transport processes in organic diodes.

Diode-pumped 2.8-μm laser emission from Er/sup 3+/:YLF at room temperature

International Nuclear Information System (INIS)

Kintz, G.J.; Allen, R.; Esterowitz, L.

1987-01-01

This paper details laser emission from an erbium-doped LiYF/sub 4/ sample longitudinally pumped at room temperature with a laser diode array observed in both pulsed and cw pumping. The threshold for pulsed emission is much less than for cw emission due to the lifetime of the terminal laser level being longer than the upper laser level. Depopulation of the lower laser level, which permits cw operation, is due to a cooperative upconversion process. The threshold energy for pulsed emission is 28 μJ when pumped with a 300-μs diode pulse. At 147 mW of diode power the threshold for cw emission occurs. The system relaxes to a steady state after 40 ms. The threshold for cw emission corresponds to --62 mW of diode power being absorbed into the crystal. Pulsed outputs of 21 μJ and cw outputs of 180 μW have been obtained. These low outputs and correspondingly low efficiencies are due to currently operating near threshold and in the self-terminating mode of the laser system. Higher concentrations and higher pumping rates should significantly improve the efficiency

Respiratory complications after diode-laser-assisted tonsillotomy.

Science.gov (United States)

Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

2014-08-01

Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

Usability of a barcode scanning system as a means of data entry on a PDA for self-report health outcome questionnaires

DEFF Research Database (Denmark)

Boissy, Patrice; Jacobs, Karen; Roy, Serge H

2006-01-01

with a text-to-speech synthesizer to collect data electronically from self-report health outcome questionnaires. METHODS: Usability of the system was tested on a sample of 24 community-living older adults (7 men, 17 women) ranging in age from 63 to 93 years. After receiving a brief demonstration on the use...... of errors). RESULTS: Overall, participants found barcode scanning easy to learn, easy to use, and pleasant. Participants were marginally faster in completing the 16 survey questions when using pen entry (20/24 participants). The mean response time with the barcode scanner was 31 seconds longer than...... traditional pen entry for a subset of 16 questions (p = 0.001). The responsiveness of the scanning system, expressed as first scan success rate, was less than perfect, with approximately one-third of first scans requiring a rescan to successfully capture the data entry. The responsiveness of the system can...

Uniform current density and divergence control in high power extraction ion diodes

International Nuclear Information System (INIS)

Desjarlais, M.P.; Coats, R.S.; Lockner, T.R.; Pointon, T.D.; Johnson, D.J.; Slutz, S.A.; Lemke, R.W.; Cuneo, M.E.; Mehlhorn, T.A.

1996-01-01

A theory of radial beam uniformity in extraction ion diodes is presented. The theory is based on a locally one-dimensional analysis of the diamagnetic compression of magnetic streamlines and the self-consistent determination of the virtual cathode location. The radial dependence of the applied magnetic field is used to determine the critical parameters of this locally one-dimensional treatment. The theory has been incorporated into the ATHETA magnetic field code to allow the rapid evaluation of realistic magnetic field configurations. Comparisons between the theoretical results, simulations with the QUICKSILVER code, and experiments on the PBFA-X accelerator establish the usefulness of this tool for tuning magnetic fields to improve ion beam uniformity. The consequences of poor beam uniformity on the evolution of ion diode instabilities are discussed with supporting evidence from simulations, theory, and experiments. (author). 8 figs., 15 refs

Uniform current density and divergence control in high power extraction ion diodes

International Nuclear Information System (INIS)

Desjarlais, M.P.; Coats, R.S.; Lockner, T.R.; Pointon, T.D.; Johnson, D.J.; Slutz, S.A.; Lemke, R.W.; Cuneo, M.E.; Melhorn, T.A.

1996-01-01

A theory of radial beam uniformity in extraction ion diodes is presented. The theory is based on a locally one dimensional analysis of the diamagnetic compression of magnetic streamlines and the self consistent determination of the virtual cathode location. The radial dependence of the applied magnetic field is used to determine the critical parameters of this locally one dimensional treatment. The theory has been incorporated into the ATHETA magnetic field code to allow the rapid evaluation of realistic magnetic field configurations. Comparisons between the theoretical results, simulations with the QUICKSILVER code, and experiments on the PBFA-X accelerator establish the usefulness of this tool for tuning magnetic fields to improve ion beam uniformity. The consequences of poor beam uniformity on the evolution of ion diode instabilities are discussed with supporting evidence from simulations, theory, and experiments

Uniform current density and divergence control in high power extraction ion diodes

Energy Technology Data Exchange (ETDEWEB)

Desjarlais, M P; Coats, R S; Lockner, T R; Pointon, T D; Johnson, D J; Slutz, S A; Lemke, R W; Cuneo, M E; Mehlhorn, T A [Sandia Labs., Albuquerque, NM (United States)

1997-12-31

A theory of radial beam uniformity in extraction ion diodes is presented. The theory is based on a locally one-dimensional analysis of the diamagnetic compression of magnetic streamlines and the self-consistent determination of the virtual cathode location. The radial dependence of the applied magnetic field is used to determine the critical parameters of this locally one-dimensional treatment. The theory has been incorporated into the ATHETA magnetic field code to allow the rapid evaluation of realistic magnetic field configurations. Comparisons between the theoretical results, simulations with the QUICKSILVER code, and experiments on the PBFA-X accelerator establish the usefulness of this tool for tuning magnetic fields to improve ion beam uniformity. The consequences of poor beam uniformity on the evolution of ion diode instabilities are discussed with supporting evidence from simulations, theory, and experiments. (author). 8 figs., 15 refs.

Ultrafast CT scanning of an oak log for internal defects

Science.gov (United States)

Francis G. Wagner; Fred W. Taylor; Douglas S. Ladd; Charles W. McMillin; Fredrick L. Roder

1989-01-01

Detecting internal defects in sawlogs and veneer logs with computerized tomographic (CT) scanning is possible, but has been impractical due to the long scanning time required. This research investigated a new scanner able to acquire 34 cross-sectional log scans per second. This scanning rate translates to a linear log feed rate of 85 feet (25.91 m) per minute at one...

Aortic and Hepatic Contrast Enhancement During Hepatic-Arterial and Portal Venous Phase Computed Tomography Scanning: Multivariate Linear Regression Analysis Using Age, Sex, Total Body Weight, Height, and Cardiac Output.

Science.gov (United States)

Masuda, Takanori; Nakaura, Takeshi; Funama, Yoshinori; Higaki, Toru; Kiguchi, Masao; Imada, Naoyuki; Sato, Tomoyasu; Awai, Kazuo

We evaluated the effect of the age, sex, total body weight (TBW), height (HT) and cardiac output (CO) of patients on aortic and hepatic contrast enhancement during hepatic-arterial phase (HAP) and portal venous phase (PVP) computed tomography (CT) scanning. This prospective study received institutional review board approval; prior informed consent to participate was obtained from all 168 patients. All were examined using our routine protocol; the contrast material was 600 mg/kg iodine. Cardiac output was measured with a portable electrical velocimeter within 5 minutes of starting the CT scan. We calculated contrast enhancement (per gram of iodine: [INCREMENT]HU/gI) of the abdominal aorta during the HAP and of the liver parenchyma during the PVP. We performed univariate and multivariate linear regression analysis between all patient characteristics and the [INCREMENT]HU/gI of aortic- and liver parenchymal enhancement. Univariate linear regression analysis demonstrated statistically significant correlations between the [INCREMENT]HU/gI and the age, sex, TBW, HT, and CO (all P linear regression analysis showed that only the TBW and CO were of independent predictive value (P linear regression analysis only the TBW and CO were significantly correlated with aortic and liver parenchymal enhancement; the age, sex, and HT were not. The CO was the only independent factor affecting aortic and liver parenchymal enhancement at hepatic CT when the protocol was adjusted for the TBW.

Laser diode technology for coherent communications

Science.gov (United States)

Channin, D. J.; Palfrey, S. L.; Toda, M.

1989-01-01

The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

Plasma filled diodes and application to a PEOS

International Nuclear Information System (INIS)

Grossmann, J.M.; Ottinger, P.F.; Drobot, A.T.; Seftor, L.

1985-01-01

Pinched beam diodes generally begin operation at large impedances until the diode has had time to turn on (at which point strong electric fields turn on electric emission at the cathode). Current turn-on is accompanied by a sharp drop in impedance and is accomplished initially through space charge limited flow. As the current increases, the diode impedance will be determined by critical current flow when the electron beam pinches. Eventually the diode shorts out by gap closure as the high density electrode plasmas expand cross the AK gap. After turn-on, then, the diode acts as a low impedance load which is favorable for coupling to a PEOS by allowing for strong insulation of the electron flow from the PEOS to the load. It would be advantageous when using a PEOS to have the impedance of the diode low even at early times. This can be accomplished by introducing a low density plasma in the region between the cathode and the anode. The plasma initially presents the PEOS with a low impedance current path at the load as the switch opens - thereby reducing current losses upstream of the load. As the switch opens, the impedance of the diode can increase as the diode plasma erodes away, and the diode gap opens

Performance of a shallow-focus applied-magnetic-field diode for ion-beam-transport experiments

Energy Technology Data Exchange (ETDEWEB)

Young, F.C.; Neri, J.M.; Ottinger, P.F. [Naval Research Lab., Washington, DC (United States); Rose, D.V. [JAYCOR, Vienna (Vatican City State, Holy See); Jones, T.G.; Oliver, B.V.

1997-12-31

An applied-magnetic-field ion diode to study the transport of intense ion beams for light-ion inertial confinement fusion is being operated on the Gamble II generator at NRL. A Large-area (145-cm{sup 2}), shallow-focusing diode is used to provide the ion beam required for self-pinched transport (SPT) experiments. Experiments have demonstrated focusing at 70 cm for 1.2-MV, 40-kA protons. Beyond the focus, the beam hollows out consistent with 20--30 mrad microdivergence. The effect of the counter-pulse B-field on altering the ion-beam trajectories and improving the focus has been diagnosed with a multiple-pinhole-camera using radiachromic film. This diagnostic is also used to determine the radial and azimuthal uniformity of ion emission at the anode for different B-field conditions. Increasing the diode voltage to 1.5 MV and optimizing the ion current are planned before initiating SPT experiments. Experiments to measure the spatial beam profile at focus, i.e., the SPT channel entrance, are in progress. Results are presented.

Recent advancements in spectroscopy using tunable diode lasers

International Nuclear Information System (INIS)

Nasim, Hira; Jamil, Yasir

2013-01-01

Spectroscopy using tunable diode lasers is an area of research that has gone through a dramatic evolution over the last few years, principally because of new exciting approaches in the field of atomic and molecular spectroscopy. This article attempts to review major recent advancements in the field of diode laser based spectroscopy. The discussion covers the developments made so far in the field of diode lasers and illustrates comprehensively the properties of free-running diode lasers. Since the commercially available free-running diode lasers are not suitable for high-precision spectroscopic studies, various techniques developed so far for converting these free-running diode lasers into true narrow linewidth tunable laser sources are discussed comprehensively herein. The potential uses of diode lasers in different spectroscopic fields and their extensive list of applications have also been included, which may be interesting for the novice and the advanced user as well. (topical review)

Enhanced Emission Efficiency of Size-Controlled InGaN/GaN Green Nanopillar Light-Emitting Diodes

DEFF Research Database (Denmark)

Ou, Yiyu; Iida, Daisuke; Fadil, Ahmed

2016-01-01

Nanopillar InGaN/GaN green light-emitting diode (LED) arrays were fabricated by self-assembled Au nanoparticles patterning and dry etching process. Structure size and density of the nanopillar arrays have been modified by varying the Au film thickness in the nanopatterning process. Fabricated...

Quasi-CW Laser Diode Bar Life Tests

Science.gov (United States)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

Carbon nanotube Schottky diode: an atomic perspective

International Nuclear Information System (INIS)

Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T

2008-01-01

The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode

Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes

Science.gov (United States)

Sadat Mohajerani, Matin; Müller, Marcus; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-H.; Veit, Peter; Bertram, Frank; Christen, Jürgen; Waag, Andreas

2016-05-01

Three-dimensional (3D) InGaN/GaN quantum-well (QW) core-shell light emitting diodes (LEDs) are a promising candidate for the future solid state lighting. In this contribution, we study direct correlations of structural and optical properties of the core-shell LEDs using highly spatially-resolved cathodoluminescence spectroscopy (CL) in combination with scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM). Temperature-dependent resonant photoluminescence (PL) spectroscopy has been performed to understand recombination mechanisms and to estimate the internal quantum efficiency (IQE).

Electromagnetic wave analogue of electronic diode

OpenAIRE

Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

2010-01-01

An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

A practical guide to handling laser diode beams

CERN Document Server

Sun, Haiyin

2015-01-01

This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

Steady states of a diode with counterstreaming electron and positron beams

Energy Technology Data Exchange (ETDEWEB)

Ender, A. Ya.; Kuznetsov, V. I., E-mail: victor.kuznetsov@mail.ioffe.ru; Gruzdev, A. A. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

2016-10-15

Steady states of a plasma layer with counterstreaming beams of oppositely charged particles moving without collisions in a self-consistent electric field are analyzed. The study is aimed at clarifying the mechanism of generation and reconstruction of pulsar radiation. Such a layer also models the processes occurring in Knudsen plasma diodes with counterstreaming electron and ion beams. The steady-state solutions are exhaustively classified. The existence of several solutions at the same external parameters is established.

Diode for providing X-rays

International Nuclear Information System (INIS)

Rix, W.H.; Shannon, J.P.

1991-01-01

This patent describes a diode for generating X-rays and adapted for connection to a source of high electrical energy having a source of high energy electrons and a ground, the diode having a first end from which the X-rays are emitted, a second end and an axis extending between the ends. It comprises: a ring cathode connected to the electron source; an intermediate anode spaced from the ring cathode and with at least a portion of the intermediate anode being disposed between the ring cathode and the diode first end, the intermediate anode hiving means for decelerating electrons to cause the generation of X-rays emitted from the first end; an intermediate cathode disposed radially outwardly of the intermediate anode and connected thereto; and an inverse anode spaced from the intermediate cathode, the inverse and anode being disposed radially outwardly of the intermediate cathode and the inverse anode being positioned between the intermediate cathode and the diode second end

Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

Energy Technology Data Exchange (ETDEWEB)

Etchessahar, Bertrand; Bicrel, Beatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hebert, David [CEA, DAM, CESTA, F-33114 Le Barp (France); Bernigaud, Virgile; Magnin, Laurent; Nicolas, Remi; Poulet, Frederic; Tailleur, Yaeel [CEA, DAM, VALDUC, F-21120 Is sur Tille (France); Caron, Michel; Cartier, Frederic; Cartier, Stephanie; Hourdin, Laurent; Rosol, Rodolphe; Toury, Martial; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle [CEA, DAM, GRAMAT, F-46500 Gramat (France); and others

2012-09-15

The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., 'Considerations of rod-pinch diode operation in negative polarity for radiography,' in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975-978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., 'Theoretical modeling and experimental characterization of a rod-pinch diode,' Phys. Plasmas 8(10), 4618-4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., 'Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources,' IEEE Trans. Plasma Sci. 32(5), 2004-2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., 'ASTERIX, a high intensity X-ray generator,' in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567-570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., 'Negative polarity rod pinch diode experiments on the ASTERIX generator,' in Conference Records-Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to

Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

International Nuclear Information System (INIS)

Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hébert, David; Bernigaud, Virgile; Magnin, Laurent; Nicolas, Rémi; Poulet, Frédéric; Tailleur, Yaël; Caron, Michel; Cartier, Frédéric; Cartier, Stéphanie; Hourdin, Laurent; Rosol, Rodolphe; Toury, Martial; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle

2012-01-01

The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., “Considerations of rod-pinch diode operation in negative polarity for radiography,” in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975–978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., “Theoretical modeling and experimental characterization of a rod-pinch diode,” Phys. Plasmas 8(10), 4618–4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., “Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources,” IEEE Trans. Plasma Sci. 32(5), 2004–2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., “ASTERIX, a high intensity X-ray generator,” in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567–570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., “Negative polarity rod pinch diode experiments on the ASTERIX generator,” in Conference Records–Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to achieve the most

Rapid-scan EPR imaging.

Science.gov (United States)

Eaton, Sandra S; Shi, Yilin; Woodcock, Lukas; Buchanan, Laura A; McPeak, Joseph; Quine, Richard W; Rinard, George A; Epel, Boris; Halpern, Howard J; Eaton, Gareth R

2017-07-01

In rapid-scan EPR the magnetic field or frequency is repeatedly scanned through the spectrum at rates that are much faster than in conventional continuous wave EPR. The signal is directly-detected with a mixer at the source frequency. Rapid-scan EPR is particularly advantageous when the scan rate through resonance is fast relative to electron spin relaxation rates. In such scans, there may be oscillations on the trailing edge of the spectrum. These oscillations can be removed by mathematical deconvolution to recover the slow-scan absorption spectrum. In cases of inhomogeneous broadening, the oscillations may interfere destructively to the extent that they are not visible. The deconvolution can be used even when it is not required, so spectra can be obtained in which some portions of the spectrum are in the rapid-scan regime and some are not. The technology developed for rapid-scan EPR can be applied generally so long as spectra are obtained in the linear response region. The detection of the full spectrum in each scan, the ability to use higher microwave power without saturation, and the noise filtering inherent in coherent averaging results in substantial improvement in signal-to-noise relative to conventional continuous wave spectroscopy, which is particularly advantageous for low-frequency EPR imaging. This overview describes the principles of rapid-scan EPR and the hardware used to generate the spectra. Examples are provided of its application to imaging of nitroxide radicals, diradicals, and spin-trapped radicals at a Larmor frequency of ca. 250MHz. Copyright © 2017 Elsevier Inc. All rights reserved.

Investigation of the structural anisotropy in a self-assembling glycinate layer on Cu(100) by scanning tunneling microscopy and density functional theory calculations

Energy Technology Data Exchange (ETDEWEB)

Kuzmin, Mikhail [Surface Science Laboratory, Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland); Ioffe Physical Technical Institute, Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021 (Russian Federation); Lahtonen, Kimmo; Vuori, Leena [Surface Science Laboratory, Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland); Sánchez-de-Armas, Rocío [Materials Theory Division, Department of Physics and Astronomy, Uppsala University, P.O. Box 516, S75120 Uppsala (Sweden); Hirsimäki, Mika, E-mail: mikahirsi@gmail.com [Surface Science Laboratory, Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland); Valden, Mika [Surface Science Laboratory, Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland)

2017-07-01

Highlights: • Deprotonation reaction of glycine and self-assembly of glycinate is observed on Cu. • Bias-dependent scanning tunneling microscopy indicates two glycinate geometries. • Density functional theory calculations confirm the two non-identical configurations. • Non-identical adsorption explains the anisotropy in adlayer’s electronic structure. - Abstract: Self-assembling organic molecule-metal interfaces exhibiting free-electron like (FEL) states offers an attractive bottom-up approach to fabricating materials for molecular electronics. Accomplishing this, however, requires detailed understanding of the fundamental driving mechanisms behind the self-assembly process. For instance, it is still unresolved as to why the adsorption of glycine ([NH{sub 2}(CH{sub 2})COOH]) on isotropic Cu(100) single crystal surface leads, via deprotonation and self-assembly, to a glycinate ([NH{sub 2}(CH{sub 2})COO–]) layer that exhibits anisotropic FEL behavior. Here, we report on bias-dependent scanning tunneling microscopy (STM) experiments and density functional theory (DFT) calculations for glycine adsorption on Cu(100) single crystal surface. We find that after physical vapor deposition (PVD) of glycine on Cu(100), glycinate self-assembles into an overlayer exhibiting c(2 × 4) and p(2 × 4) symmetries with non-identical adsorption sites. Our findings underscore the intricacy of electrical conductivity in nanomolecular organic overlayers and the critical role the structural anisotropy at molecule-metal interface plays in the fabrication of materials for molecular electronics.

Diode laser based light sources for biomedical applications

DEFF Research Database (Denmark)

Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin

2013-01-01

Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

Semi-automatic mapping of linear-trending bedforms using 'Self-Organizing Maps' algorithm

Science.gov (United States)

Foroutan, M.; Zimbelman, J. R.

2017-09-01

Increased application of high resolution spatial data such as high resolution satellite or Unmanned Aerial Vehicle (UAV) images from Earth, as well as High Resolution Imaging Science Experiment (HiRISE) images from Mars, makes it necessary to increase automation techniques capable of extracting detailed geomorphologic elements from such large data sets. Model validation by repeated images in environmental management studies such as climate-related changes as well as increasing access to high-resolution satellite images underline the demand for detailed automatic image-processing techniques in remote sensing. This study presents a methodology based on an unsupervised Artificial Neural Network (ANN) algorithm, known as Self Organizing Maps (SOM), to achieve the semi-automatic extraction of linear features with small footprints on satellite images. SOM is based on competitive learning and is efficient for handling huge data sets. We applied the SOM algorithm to high resolution satellite images of Earth and Mars (Quickbird, Worldview and HiRISE) in order to facilitate and speed up image analysis along with the improvement of the accuracy of results. About 98% overall accuracy and 0.001 quantization error in the recognition of small linear-trending bedforms demonstrate a promising framework.

Diode-Assisted Buck-Boost Voltage-Source Inverters

DEFF Research Database (Denmark)

Gao, Feng; Loh, Poh Chiang; Teodorescu, Remus

2009-01-01

, a number of diode-assisted inverter variants can be designed with each having its own operational principle and voltage gain expression. For controlling them, a generic modulation scheme that can be used for controlling all diode-assisted variants with minimized harmonic distortion and component stress......This paper proposes a number of diode-assisted buck-boost voltage-source inverters with a unique X-shaped diode-capacitor network inserted between the inverter circuitry and dc source for producing a voltage gain that is comparatively higher than those of other buck-boost conversion techniques....... Using the diode-assisted network, the proposed inverters can naturally configure themselves to perform capacitive charging in parallel and discharging in series to give a higher voltage multiplication factor without compromising waveform quality. In addition, by adopting different front-end circuitries...

Ion current reduction in pinched electron beam diodes

International Nuclear Information System (INIS)

Quintenz, J.P.; Poukey, J.W.

1977-01-01

A new version of a particle-in-cell diode code has been written which permits the accurate treatment of higher-current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large-aspect-ratio pinched electron beam diodes. In particular, we find that allowing the ions to reflex in such diodes lowers the ion to electron current ratio considerably. In a 3-MV R/d=24 case this ratio was lowered by a factor of 6--8 compared with the corresponding nonreflexing-ion diode, while still producing a superpinched electron beam

Scanning slit for HIE-ISOLDE: vibrations test (linear motion actuator from UHV design, MAXON brushless motor, speed = 10 mm/s)

CERN Document Server

Bravin, E; Sosa, A

2014-01-01

This report summarizes the results of a series of tests performed on the prototype HIE-ISOLDE diagnostic box (HIE-DB) regarding the vibrations and drifts in the transverse position of the scanning blade while moving in and out of beam path in the HIE-ISOLDE short box prototype. To monitor the transverse position of the blade, a series of 0.1 mm diameter holes were drilled on it and their positions were tracked with an optical system. The linear motion actuator was acquired from UHV design (model LSM38-150-SS), and it was adapted to be driven by a brushless EC motor from MAXON. The speed of the scanning blade during the tests was 10 mm/s. The transverse movement of the slit in the direction perpendicular to the movement was lower than 40 m, and is dominated by the displacement of the contact point of the applied force on the lead-screw. An offset on the slit position was observed while changing the direction of movement of the blade, its amplitude being of the order of 30 m. The amplitudes of the displacements...

Arbitrary waveform generator to improve laser diode driver performance

Science.gov (United States)

Fulkerson, Jr, Edward Steven

2015-11-03

An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

Trap-induced photoconductivity in singlet fission pentacene diodes

Energy Technology Data Exchange (ETDEWEB)

Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)

2014-07-21

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

The vortex-like self-consistent electron fluid model by the applied-B ion diode: equilibrium and instability

International Nuclear Information System (INIS)

Gordeev, A.V.

1996-01-01

The electron inertia effects in the one-dimensional model of the applied-B ion diode for the relativistic diode potential eU/m e c 2 ≥ 1 were investigated, where the magnetic Debye length r B is of the order of the collisionless electron skin depth c/ω pe . For this, an analytical relation between the magnetic field and the electric potential was developed, owing to which the second order eigenvalue problem can be reduced to a system of algebraic equations. Instabilities inside the vacuum gap and in the near-anode emitting plasma are considered. In the near-anode Hall plasma, the instability with two ion species was obtained; this can can contribute to the ion angle divergence. (author). 10 refs

The vortex-like self-consistent electron fluid model by the applied-B ion diode: equilibrium and instability

Energy Technology Data Exchange (ETDEWEB)

Gordeev, A V [Kurchatov Institute, Moscow (Russian Federation). Nuclear Fusion Institute

1997-12-31

The electron inertia effects in the one-dimensional model of the applied-B ion diode for the relativistic diode potential eU/m{sub e}c{sup 2} {>=} 1 were investigated, where the magnetic Debye length r{sub B} is of the order of the collisionless electron skin depth c/{omega}{sub pe}. For this, an analytical relation between the magnetic field and the electric potential was developed, owing to which the second order eigenvalue problem can be reduced to a system of algebraic equations. Instabilities inside the vacuum gap and in the near-anode emitting plasma are considered. In the near-anode Hall plasma, the instability with two ion species was obtained; this can can contribute to the ion angle divergence. (author). 10 refs.

P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

Science.gov (United States)

Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

2017-10-01

In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

Coupling Phenomenon in Diode with Dielectric Gridded Cathode

International Nuclear Information System (INIS)

Lahav, A.; Berezovsky, V.; Schachter, L.

1999-01-01

We investigated the current characteristic in a vacuum diode with a Gridded cathode. The grid is located on a top of a Ferro - Electric disk with a uniform cathode on its back side. We found experimental evidence that the current in such a system exceeds Child - Langmuir limit, in agreement with results reported in [1]. Explanations to this phenomenon were given in term of the non-linear characteristic of the ferro - electric ceramic or by plasma-assisted emission and gap closure. Recently [2] it has been shown theoretically that electrostatic coupling between the dielectric disk and the vacuum gap is directly responsible to the excess of current. We shall report experimental results that may support this possibility

Measurement and deconvolution of detector response time for short HPM pulses: Part 1, Microwave diodes

International Nuclear Information System (INIS)

Bolton, P.R.

1987-06-01

A technique is described for measuring and deconvolving response times of microwave diode detection systems in order to generate corrected input signals typical of an infinite detection rate. The method has been applied to cases of 2.86 GHz ultra-short HPM pulse detection where pulse rise time is comparable to that of the detector; whereas, the duration of a few nanoseconds is significantly longer. Results are specified in terms of the enhancement of equivalent deconvolved input voltages for given observed voltages. The convolution integral imposes the constraint of linear detector response to input power levels. This is physically equivalent to the conservation of integrated pulse energy in the deconvolution process. The applicable dynamic range of a microwave diode is therefore limited to a smaller signal region as determined by its calibration

Preliminary testing of the Scanning Laser Environmental Airborne Fluorosensor

International Nuclear Information System (INIS)

Brown, C.E.; Marois, R.; Fingas, M.F.; Mullin, J.V.

2000-01-01

The installation and testing program of the Scanning Laser Environmental Airborne Fluorosensor (SLEAF) on Environment Canada's DC-3 aircraft was described and the capabilities of the new system were presented. SLEAF is a new generation of laser fluorosensor designed to provide prompt reliable detection and mapping of oil pollution in different marine and terrestrial environments. It consists of a high-power excimer laser, high-resolution range-gated intensified diode-array spectrometer, and a pair of variable speed and angular displacement scanning mirrors. SLEAF is capable of detecting narrow bands of oil that can pile up along the high tide lines of beaches and shorelines, including those that contain ice and snow. It also has the added benefit of providing real-time detection. SLEAF will be declared operational for emergency response personnel when the initial test flight program will be completed in the near future. 9 refs., 2 figs

Ultrafast photon counting applied to resonant scanning STED microscopy.

Science.gov (United States)

Wu, Xundong; Toro, Ligia; Stefani, Enrico; Wu, Yong

2015-01-01

To take full advantage of fast resonant scanning in super-resolution stimulated emission depletion (STED) microscopy, we have developed an ultrafast photon counting system based on a multigiga sample per second analogue-to-digital conversion chip that delivers an unprecedented 450 MHz pixel clock (2.2 ns pixel dwell time in each scan). The system achieves a large field of view (∼50 × 50 μm) with fast scanning that reduces photobleaching, and advances the time-gated continuous wave STED technology to the usage of resonant scanning with hardware-based time-gating. The assembled system provides superb signal-to-noise ratio and highly linear quantification of light that result in superior image quality. Also, the system design allows great flexibility in processing photon signals to further improve the dynamic range. In conclusion, we have constructed a frontier photon counting image acquisition system with ultrafast readout rate, excellent counting linearity, and with the capacity of realizing resonant-scanning continuous wave STED microscopy with online time-gated detection. © 2014 The Authors Journal of Microscopy © 2014 Royal Microscopical Society.

Diode array pumped, non-linear mirror Q-switched and mode-locked ...

Indian Academy of Sciences (India)

A non-linear mirror consisting of a lithium triborate crystal and a dichroic ... effects such as all-optical switching [7,8], nearly degenerate four-wave mixing [9,10], .... is driven by a radio frequency signal of 27.2MHz with a modulation available in.

Near-field phase-change recording using a GaN laser diode

Science.gov (United States)

Kishima, Koichiro; Ichimura, Isao; Yamamoto, Kenji; Osato, Kiyoshi; Kuroda, Yuji; Iida, Atsushi; Saito, Kimihiro

2000-09-01

We developed a 1.5-Numerical-Aperture optical setup using a GaN blue-violet laser diode. We used a 1.0 mm-diameter super-hemispherical solid immersion lens, and optimized a phase-change disk structure including the cover layer by the method of MTF simulation. The disk surface was polished by tape burnishing technique. An eye-pattern of (1-7)-coded data at the linear density of 80 nm/bit was demonstrated on the phase-change disk below a 50 nm gap height, which was realized through our air-gap servo mechanism.

Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

Science.gov (United States)

Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

2014-09-01

Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

Evaluation of the accuracy of linear measurements on multi-slice and cone beam computed tomography scans to detect the mandibular canal during bilateral sagittal split osteotomy of the mandible.

Science.gov (United States)

Freire-Maia, B; Machado, V deC; Valerio, C S; Custódio, A L N; Manzi, F R; Junqueira, J L C

2017-03-01

The aim of this study was to compare the accuracy of linear measurements of the distance between the mandibular cortical bone and the mandibular canal using 64-detector multi-slice computed tomography (MSCT) and cone beam computed tomography (CBCT). It was sought to evaluate the reliability of these examinations in detecting the mandibular canal for use in bilateral sagittal split osteotomy (BSSO) planning. Eight dry human mandibles were studied. Three sites, corresponding to the lingula, the angle, and the body of the mandible, were selected. After the CT scans had been obtained, the mandibles were sectioned and the bone segments measured to obtain the actual measurements. On analysis, no statistically significant difference was found between the measurements obtained through MSCT and CBCT, or when comparing the measurements from these scans with the actual measurements. It is concluded that the images obtained by CT scan, both 64-detector multi-slice and cone beam, can be used to obtain accurate linear measurements to locate the mandibular canal for preoperative planning of BSSO. The ability to correctly locate the mandibular canal during BSSO will reduce the occurrence of neurosensory disturbances in the postoperative period. Copyright © 2016 International Association of Oral and Maxillofacial Surgeons. Published by Elsevier Ltd. All rights reserved.