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Sample records for self-catalyzed group iii-v

  1. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    Science.gov (United States)

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  2. Transferable tight-binding model for strained group IV and III-V materials and heterostructures

    Science.gov (United States)

    Tan, Yaohua; Povolotskyi, Michael; Kubis, Tillmann; Boykin, Timothy B.; Klimeck, Gerhard

    2016-07-01

    It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduce a transferable s p3d5s* tight-binding model with nearest-neighbor interactions for arbitrarily strained group IV and III-V materials. The tight-binding model is parametrized with respect to hybrid functional (HSE06) calculations for varieties of strained systems. The tight-binding calculations of ultrasmall superlattices formed by group IV and group III-V materials show good agreement with the corresponding HSE06 calculations. The application of the tight-binding model to superlattices demonstrates that the transferable tight-binding model with nearest-neighbor interactions can be obtained for group IV and III-V materials.

  3. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  4. III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

    International Nuclear Information System (INIS)

    Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

    1984-01-01

    Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

  5. Transferable tight binding model for strained group IV and III-V heterostructures

    Science.gov (United States)

    Tan, Yaohua; Povolotskyi, Micheal; Kubis, Tillmann; Boykin, Timothy; Klimeck, Gerhard

    Modern semiconductor devices have reached critical device dimensions in the range of several nanometers. For reliable prediction of device performance, it is critical to have a numerical efficient model that are transferable to material interfaces. In this work, we present an empirical tight binding (ETB) model with transferable parameters for strained IV and III-V group semiconductors. The ETB model is numerically highly efficient as it make use of an orthogonal sp3d5s* basis set with nearest neighbor inter-atomic interactions. The ETB parameters are generated from HSE06 hybrid functional calculations. Band structures of strained group IV and III-V materials by ETB model are in good agreement with corresponding HSE06 calculations. Furthermore, the ETB model is applied to strained superlattices which consist of group IV and III-V elements. The ETB model turns out to be transferable to nano-scale hetero-structure. The ETB band structures agree with the corresponding HSE06 results in the whole Brillouin zone. The ETB band gaps of superlattices with common cations or common anions have discrepancies within 0.05eV.

  6. Cycloadditions to Epoxides Catalyzed by GroupIII-V Transition-Metal Complexes

    KAUST Repository

    D'Elia, Valerio

    2015-05-25

    Complexes of groupIII-V transition metals are gaining increasing importance as Lewis acid catalysts for the cycloaddition of dipolarophiles to epoxides. This review examines the latest reports, including homogeneous and heterogeneous applications. The pivotal step for the cycloaddition reactions is the ring opening of the epoxide following activation by the Lewis acid. Two modes of cleavage (C-C versus C-O) have been identified depending primarily on the substitution pattern of the epoxide, with lesser influence observed from the Lewis acid employed. The widely studied cycloaddition of CO2 to epoxides to afford cyclic carbonates (C-O bond cleavage) has been scrutinized in terms of catalytic efficiency and reaction mechanism, showing that unsophisticated complexes of groupIII-V transition metals are excellent molecular catalysts. These metals have been incorporated, as well, in highly performing, recyclable heterogeneous catalysts. Cycloadditions to epoxides with other dipolarophiles (alkynes, imines, indoles) have been conducted with scandium triflate with remarkable performances (C-C bond cleavage). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Cycloadditions to Epoxides Catalyzed by GroupIII-V Transition-Metal Complexes

    KAUST Repository

    D'Elia, Valerio; Pelletier, Jeremie; Basset, Jean-Marie

    2015-01-01

    Complexes of groupIII-V transition metals are gaining increasing importance as Lewis acid catalysts for the cycloaddition of dipolarophiles to epoxides. This review examines the latest reports, including homogeneous and heterogeneous applications. The pivotal step for the cycloaddition reactions is the ring opening of the epoxide following activation by the Lewis acid. Two modes of cleavage (C-C versus C-O) have been identified depending primarily on the substitution pattern of the epoxide, with lesser influence observed from the Lewis acid employed. The widely studied cycloaddition of CO2 to epoxides to afford cyclic carbonates (C-O bond cleavage) has been scrutinized in terms of catalytic efficiency and reaction mechanism, showing that unsophisticated complexes of groupIII-V transition metals are excellent molecular catalysts. These metals have been incorporated, as well, in highly performing, recyclable heterogeneous catalysts. Cycloadditions to epoxides with other dipolarophiles (alkynes, imines, indoles) have been conducted with scandium triflate with remarkable performances (C-C bond cleavage). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. The coupling of thermochemistry and phase diagrams for group III-V semiconductor systems. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, T.J.

    1998-07-21

    The project was directed at linking the thermochemical properties of III-V compound semiconductors systems with the reported phase diagrams. The solid-liquid phase equilibrium problem was formulated and three approaches to calculating the reduced standard state chemical potential were identified and values were calculated. In addition, thermochemical values for critical properties were measured using solid state electrochemical techniques. These values, along with the standard state chemical potentials and other available thermochemical and phase diagram data, were combined with a critical assessment of selected III-V systems. This work was culminated with a comprehensive assessment of all the III-V binary systems. A novel aspect of the experimental part of this project was the demonstration of the use of a liquid encapsulate to measure component activities by a solid state emf technique in liquid III-V systems that exhibit high vapor pressures at the measurement temperature.

  9. First principles calculation of material properties of group IV elements and III-V compounds

    Science.gov (United States)

    Malone, Brad Dean

    This thesis presents first principles calculations on the properties of group IV elements and group III-V compounds. It includes investigations into what structure a material is likely to form in, and given that structure, what are its electronic, optical, and lattice dynamical properties as well as what are the properties of defects that might be introduced into the sample. The thesis is divided as follows: • Chapter 1 contains some of the conceptual foundations used in the present work. These involve the major approximations which allow us to approach the problem of systems with huge numbers of interacting electrons and atomic cores. • Then, in Chapter 2, we discuss one of the major limitations to the DFT formalism introduced in Chapter 1, namely its inability to predict the quasiparticle spectra of materials and in particular the band gap of a semiconductor. We introduce a Green's function approach to the electron self-energy Sigma known as the GW approximation and use it to compute the quasiparticle band structures of a number of group IV and III-V semiconductors. • In Chapter 3 we present a first-principles study of a number of high-pressure metastable phases of Si with tetrahedral bonding. The phases studied include all experimentally determined phases that result from decompression from the metallic beta-Sn phase, specifically the BC8 (Si-III), hexagonal diamond (Si-IV), and R8 (Si-XII). In addition to these, we also study the hypothetical ST12 structure found upon decompression from beta-Sn in germanium. • Our attention is then turned to the first principles calculations of optical properties in Chapter 4. The Bethe-Salpeter equation is then solved to obtain the optical spectrum of this material including electron-hole interactions. The calculated optical spectrum is compared with experimental data for other forms of silicon commonly used in photovoltaic devices, namely the cubic, polycrystalline, and amorphous forms. • In Chapter 5 we present

  10. Quantitative STEM on indium containing group III-V semiconductor nanostructures

    International Nuclear Information System (INIS)

    Mehrtens, Thorsten

    2013-01-01

    In the framework of this thesis. a method for compositional analysis of semiconductor nanostructures is applied on technologically relevant group III-V alloys. It is based on a quantitative comparison between intensities of experimentally acquired High-Angle Annular Dark Field Scanning Tansmission Electron Microscopy (HAADF-STEM) images and simulated intensities from multislice calculations in the frozen lattice approach. The demonstrated method allows determination of specimen thickness and material composition on subnanometer scale. Since quantitative HAADF-STEM is still a very young technique, its applicability has only been proven for a few materials, yet. Thus, the main goal of this thesis is the simulation of suitable reference datasets for different ternary semiconducting alloys and to test their reliability by complementary analysis. A total of three different semiconducting materials are thereby analyzed (InGaN, InGaAs and InAlN) that have all in common that they contain indium. The main focus of this work lies on InGaN which is due to its bandgap particularly suitable for the fabrication of optoelectronic devices operating in the visible spectrum of the light. In the first part of the presented results, the quality of ultra-thin TEM-specimens prepared by techniques involving ion milling at high energies is optimized. This is done by an additional ion milling step where the impinging ions possess an energy of only 400 eV. It is found that the preparation induced amorphous surface layer that occurs during ion milling can be drastically reduced below 1 nm. The second part concentrates on results obtained on InGaN. Here, different simulations in the frozen lattice approach are carried out under certain conditions. These simulations either include or do not include thermal diffuse scattering and/or static atomic displacement to demonstrate their influence on the amount of intensity measured in the experiment. As the consideration of thermal diffuse scattering

  11. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad

    2016-01-01

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III

  12. III-V microelectronics

    CERN Document Server

    Nougier, JP

    1991-01-01

    As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental p

  13. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  14. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.

    2014-01-01

    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS

  15. Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis.

    Science.gov (United States)

    Tice, Jesse B; Chizmeshya, A V G; Tolle, J; D' Costa, V R; Menendez, J; Kouvetakis, J

    2010-05-21

    The (SiH₃)₃P hydride is introduced as a practical source for n-doping of group IV semiconductors and as a highly-reactive delivery agent of -(SiH₃)₂P functionalities in exploratory synthesis. In contrast to earlier methods, the compound is produced here in high purity quantitative yields via a new single-step method based on reactions of SiH₃Br and (Me₃Sn)₃P, circumventing the need for toxic and unstable starting materials. As an initial demonstration of its utility we synthesized monosubstituted Me₂M-P(SiH₃)₂ (M = Al, Ga, In) derivatives of Me₃M containing the (SiH₃)₂P ligand for the first time, in analogy to the known Me₂M-P(SiMe₃)₂ counterparts. A dimeric structure of Me₂M-P(SiH₃)₂ is proposed on the basis of spectroscopic characterizations and quantum chemical simulations. Next, in the context of materials synthesis, the (SiH₃)₃P compound was used to dope germanium for the first time by building a prototype p(++)Si(100)/i-Ge/n-Ge photodiode structure. The resultant n-type Ge layers contained active carrier concentrations of 3-4 × 10¹⁹ atoms cm⁻³ as determined by spectroscopic ellipsometry and confirmed by SIMS. Strain analysis using high resolution XRD yielded a Si content of 4 × 10²⁰ atoms cm⁻³ in agreement with SIMS and within the range expected for incorporating Si₃P type units into the diamond cubic Ge matrix. Extensive characterizations for structure, morphology and crystallinity indicate that the Si co-dopant plays essentially a passive role and does not compromise the device quality of the host material nor does it fundamentally alter its optical properties.

  16. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.

    2014-04-01

    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

  17. Antisites in III-V semiconductors: Density functional theory calculations

    KAUST Repository

    Chroneos, A.; Tahini, Hassan Ali; Schwingenschlö gl, Udo; Grimes, R. W.

    2014-01-01

    as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I

  18. Thermal oxidation of III-V compounds

    International Nuclear Information System (INIS)

    Monteiro, O.R.; Evans, J.W.

    1988-01-01

    The thermal oxidation of two important III-V compound semiconductor materials, namely GaAs and InP, has been studied between 300 and 600 0 C. In-situ TEM, cross-sectional TEM (XTEM) and SIMS analyses were used to characterize the reaction products. The first technique allows us to access the reactions at the very moment they are occurring. XTEM provides a clearer picture of the distribution of phases in the oxidized samples. SIMS gives us information on the dopant redistribution after oxidation as well as enrichment of group V element at the oxide semiconductor interface. Based on those results, the reaction products were characterized and reaction mechanisms proposed

  19. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays.

    Science.gov (United States)

    Ren, Dingding; Dheeraj, Dasa L; Jin, Chengjun; Nilsen, Julie S; Huh, Junghwan; Reinertsen, Johannes F; Munshi, A Mazid; Gustafsson, Anders; van Helvoort, Antonius T J; Weman, Helge; Fimland, Bjørn-Ove

    2016-02-10

    Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.

  20. III-V semiconductor materials and devices

    CERN Document Server

    Malik, R J

    1989-01-01

    The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

  1. Surface passivation technology for III-V semiconductor nanoelectronics

    International Nuclear Information System (INIS)

    Hasegawa, Hideki; Akazawa, Masamichi

    2008-01-01

    The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

  2. Research progress of III-V laser bonding to Si

    Science.gov (United States)

    Bo, Ren; Yan, Hou; Yanan, Liang

    2016-12-01

    The vigorous development of silicon photonics makes a silicon-based light source essential for optoelectronics' integration. Bonding of III-V/Si hybrid laser has developed rapidly in the last ten years. In the tireless efforts of researchers, we are privileged to see these bonding methods, such as direct bonding, medium adhesive bonding and low temperature eutectic bonding. They have been developed and applied to the research and fabrication of III-V/Si hybrid lasers. Some research groups have made remarkable progress. Tanabe Katsuaki of Tokyo University successfully implemented a silicon-based InAs/GaAs quantum dot laser with direct bonding method in 2012. They have bonded the InAs/GaAs quantum dot laser to the silicon substrate and the silicon ridge waveguide, respectively. The threshold current of the device is as low as 200 A/cm2. Stevan Stanković and Sui Shaoshuai successfully produced a variety of hybrid III-V/Si laser with the method of BCB bonding, respectively. BCB has high light transmittance and it can provide high bonding strength. Researchers of Tokyo University and Peking University have realized III-V/Si hybrid lasers with metal bonding method. We describe the progress in the fabrication of III-V/Si hybrid lasers with bonding methods by various research groups in recent years. The advantages and disadvantages of these methods are presented. We also introduce the progress of the growth of III-V epitaxial layer on silicon substrate, which is also a promising method to realize silicon-based light source. I hope that readers can have a general understanding of this field from this article and we can attract more researchers to focus on the study in this field.

  3. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  4. Antisites in III-V semiconductors: Density functional theory calculations

    KAUST Repository

    Chroneos, A.

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III=Al, Ga, and In and V=P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I q) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III V q defects dominate under III-rich conditions and V I I I q under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies. © 2014 AIP Publishing LLC.

  5. Growth of Ag-seeded III-V Nanowires and TEM Characterization

    DEFF Research Database (Denmark)

    Lindberg, Anna Helmi Caroline

    appropriate, the density and the vertical yield were obtained. The crystal structures for the grown nanowires have been investigated with TEM.We have also performed additional growths to further understand exactly how the nanowire growth proceeds as well as to understand the limitations of using Ag as a seed......This thesis deals with growth and characterization of GaAs and InAs nanowires. Today Au nanoparticle-seeding together with self-catalyzing are the dominating techniques to grow III-V nanowires with molecular beam epitaxy. In this thesis we instead investigate the possibility to use Ag as seed...... particle for growth of GaAs and InAs nanowires. The aim with the experiments performed has been to conclude whether Ag can be used to nucleate and grow nanowires on III-V substrates with molecular beam epitaxy. To investigate this we have performed growths of GaAs nanowires on GaAs(111)B and GaAs(100...

  6. Understanding the vapor-liquid-solid growth and composition of ternary III-V nanowires and nanowire heterostructures

    Science.gov (United States)

    Dubrovskii, V. G.

    2017-11-01

    Based on the recent achievements in vapor-liquid-solid (VLS) synthesis, characterization and modeling of ternary III-V nanowires and axial heterostructures within such nanowires, we try to understand the major trends in their compositional evolution from a general theoretical perspective. Clearly, the VLS growth of ternary materials is much more complex than in standard vapor-solid epitaxy techniques, and even maintaining the necessary control over the composition of steady-state ternary nanowires is far from straightforward. On the other hand, VLS nanowires offer otherwise unattainable material combinations without introducing structural defects and hence are very promising for next-generation optoelectronic devices, in particular those integrated with a silicon electronic platform. In this review, we consider two main problems. First, we show how and by means of which parameters the steady-state composition of Au-catalyzed or self-catalyzed ternary III-V nanowires can be tuned to a desired value and why it is generally different from the vapor composition. Second, we present some experimental data and modeling results for the interfacial abruptness across axial nanowire heterostructures, both in Au-catalyzed and self-catalyzed VLS growth methods. Refined modeling allows us to formulate some general growth recipes for suppressing the unwanted reservoir effect in the droplet and sharpening the nanowire heterojunctions. We consider and refine two approaches developed to date, namely the regular crystallization model for a liquid alloy with a critical size of only one III-V pair at high supersaturations or classical binary nucleation theory with a macroscopic critical nucleus at modest supersaturations.

  7. Subsurface dimerization in III-V semiconductor (001) surfaces

    DEFF Research Database (Denmark)

    Kumpf, C.; Marks, L.D.; Ellis, D.

    2001-01-01

    We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms ...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

  8. Structure of metal-rich (001) surfaces of III-V compound semiconductors

    DEFF Research Database (Denmark)

    Kumpf, C.; Smilgies, D.; Landemark, E.

    2001-01-01

    The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks....

  9. Progress in III-V materials technology

    Science.gov (United States)

    Grant, Ian R.

    2004-12-01

    Compound semiconductors, in the form of GaAs and InP have achieved major commercial significance in areas of application such as mobile communications, displays and telecoms and offer a versatility of function beyond the capabilities of Si. III-V compounds, and in particular GaAs, have since their early development been the subject of defence related interest. Support from this sector established the basic materials technologies and nurtured development up until their commercial breakthrough into consumer products. GaAs, for example, now provides essential components for mobile phones and CD / DVD players. An overview is presented of the crystal growth and processing methods used in the manufacture of these materials. Current state of the art characteristics on crystal form and quality are discussed, together with the evolution of single crystal growth techniques. Consideration is given to how these principal compounds together with the minor materials, InSb, GaSb and InAs are employed in diverse applications over a broad spectral range, together with information on markets and future perspectives.

  10. Organic / IV, III-V Semiconductor Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Pang-Leen Ong

    2010-03-01

    Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

  11. Position-controlled epitaxial III-V nanowires on silicon

    NARCIS (Netherlands)

    Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

  12. Fast optical in situ spectroscopy in III-V MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Kaspari, C.

    2007-09-29

    This work describes the application of optical in situ measurement techniques (reflectance anisotropy spectroscopy, RAS, and spectroscopic ellipsometry, SE) to processes that are important for the growth of III-V semiconductors like GaAs, InP, InAs and GaP in metal-organic vapour phase epitaxy (MOVPE). Special emphasis is placed on the determination of the free carrier concentration (doping level) and the study of the thermal desorption properties of III-V oxides. A large part of this work is concerned with the development and the construction of a multichannel RAS setup that allows the recording of RAS spectra within fractions of a second. On the basis of benchmark measurements it was shown that the spectral resolution is sufficiently accurate for application in epitaxy. To demonstrate the recording of spectra with high temporal resolution, RAS monolayer oscillations during growth of GaAs were studied and it was shown that the surface changes periodically between a relatively smooth morphology with adsorbed methyl groups (type III) and a stepped, gallium-rich surface (type II). Furthermore the non-reversible process of growing InAs quantum dots on GaAs was studied. It was shown that the multichannel RAS is capable of detecting the 2D-3D transition as well as the following morphological change of the surface at high temporal resolution. For the measurement of the doping level, the relationship between the doping-induced internal electric field and the anisotropy of the sample was studied. To understand the effect of the so-called doping oscillations, a theoretical model was developed. For the investigation of the thermal desorption of the III-V oxides in MOVPE, a number of test series were realised. It was also found that the formation of the reconstructed surface is finished a considerable time after the SE transient indicates stable conditions (no further reduction of the oxide layer). The activation energy for oxide desorption from InAs, GaAs and InP was

  13. Magnetooptical investigations on ferromagnetic III-V-semiconductors; Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Winter, Andreas

    2009-07-23

    Magnetooptical Kerr effect (MOKE) and Magnetic Circular Dichroism (MCD) have been used to investigate magnetic as well as bandstructure properties of diluted magnetic III-V-semiconductors containing Mn. In these ferromagnetic systems it has been found that the strength of the observed effects depends linearly on the magnetization of the samples with no influence of the external magnetic field. The magnetooptical effects allowed the recording of hysteresis loops of GaMnAs, GaMnSb, InMnAs and InMnSb samples for different temperatures and in the case of GaMnAs also for different alignments of the external magnetic field with respect to the easy axis of magnetization. The Stoner-Wohlfahrt-Model has been used to describe the resulting shapes of the loops yielding the magnetic anisotropy parameters of the samples. For magnetically saturated samples, spectra of MOKE and MCD have been recorded. Contrary to pure III-V-semiconductors, which exhibit lots of sharp resonances due to interband transitions between Landau levels, III-Mn-V-semi-conductors how only very few (or just one) considerably broad resonance(s). Their spectral position(s) do(es) neither depend upon the magnetic field as it would be the case for pure III-V-semiconductors nor the magnetization. Only the amplitude increases linearly with the magnetization. Utilizing a kp-theory it has been possible to describe the observed dependencies. Valence- and conduction-band are split into Landau levels by the external magnetic field and, in addition to the Zeeman-effect, the spin-levels are split by the exchange interaction between the localized electrons of the Mn ions and the free carriers which is proportional to the magnetization of the samples. This splitting is much bigger than the Landau level splitting. Due to an inhomogeneous distribution of the Mn ions and due to the high carrier density the Landau levels are strongly broadened and their structure is not observable. Owing to the high carrier-concentration in

  14. Position-controlled epitaxial III-V nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

    2006-06-14

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

  15. Position-controlled epitaxial III-V nanowires on silicon

    International Nuclear Information System (INIS)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

  16. Development of III-V/Si Multijunction Space Photovoltaics

    Data.gov (United States)

    National Aeronautics and Space Administration — High substrate costs, as well as weight, typically play a major role in the high costs of multijunction space solar cell production and deployment. III-V/Si...

  17. Hybrid III-V/SOI Resonant Cavity Photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-01-01

    A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization.......A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

  18. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S M

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed by a

  19. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S.M.

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

  20. Epitaxial III-V nanowires on silicon for vertical devices

    NARCIS (Netherlands)

    Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

  1. Long-wavelength III-V/silicon photonic integrated circuits

    NARCIS (Netherlands)

    Roelkens, G.C.; Kuyken, B.; Leo, F.; Hattasan, N.; Ryckeboer, E.M.P.; Muneeb, M.; Hu, C.L.; Malik, A.; Hens, Z.; Baets, R.G.F.; Shimura, Y.; Gencarelli, F.; Vincent, B.; Loo, van de R.; Verheyen, P.A.; Lepage, G.; Campenhout, van J.; Cerutti, L.; Rodriquez, J.B.; Tournie, E.; Chen, X; Nedeljkovic, G.; Mashanovich, G.; Liu, X.; Green, W.S.

    2013-01-01

    We review our work in the field of short-wave infrared and mid-infrared photonic integrated circuits for applications in spectroscopic sensing systems. Passive silicon waveguide circuits, GeSn photodetectors, the integration of III-V and IV-VI semiconductors on these circuits, and silicon nonlinear

  2. Durability Improvement of Pt/RGO Catalysts for PEMFC by Low-Temperature Self-Catalyzed Reduction.

    Science.gov (United States)

    Sun, Kang Gyu; Chung, Jin Suk; Hur, Seung Hyun

    2015-12-01

    Pt/C catalyst used for polymer electrolyte membrane fuel cells (PEMFCs) displays excellent initial performance, but it does not last long because of the lack of durability. In this study, a Pt/reduced graphene oxide (RGO) catalyst was synthesized by the polyol method using ethylene glycol (EG) as the reducing agent, and then low-temperature hydrogen bubbling (LTHB) treatment was introduced to enhance the durability of the Pt/RGO catalyst. The cyclic voltammetry (CV), oxygen reduction reaction (ORR) analysis, and transmittance electron microscopy (TEM) results suggested that the loss of the oxygen functional groups, because of the hydrogen spillover and self-catalyzed dehydration reaction during LTHB, reduced the carbon corrosion and Pt agglomeration and thus enhanced the durability of the electrocatalyst.

  3. Cleavage mechanoluminescence in elemental and III-V semiconductors

    International Nuclear Information System (INIS)

    Chandra, B.P.; Patel, R.P.; Gour, Anubha S.; Chandra, V.K.; Gupta, R.K.

    2003-01-01

    The present paper reports the theory of mechanoluminescence (ML) produced during cleavage of elemental and III-V semiconductors. It seems that the formation of crack-induced localized states is responsible for the ML excitation produced during the cleavage of elemental and III-V semiconductors. According to this mechanism, as the atoms are drawn away from each other in an advancing crack tip, the decreasing wave function overlap across the crack may result in localized states which is associated with increasing electron energy. If the energy of these localized states approach that of the conduction band, transition to the conduction band via tunnelling would be possible, creating minority carriers, and consequently the electron-hole recombination may give rise to mechanoluminescence. When an elemental or III-V semiconductor is cleaved, initially the ML intensity increases with time, attains a peak value I m at the time t m corresponding to completion of the cleavage of the semiconductor, and then it decreases following power law decay. Expressions are derived for the ML intensity I m corresponding to the peak of the ML intensity versus time curve and for the total ML intensity I T . It is shown that both I m and I T should increase directly with the area of the newly created surfaces of the crystals. From the measurements of the ML intensity, the velocity of crack propagation in material can be determined by using the relation v=H/t m

  4. Radiation Effects in III-V Nanowire Devices

    Science.gov (United States)

    2016-09-01

    fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field- effect transistor (MOSFET) by focused -ion beam (FIB) etching and chemical...8725 John J. Kingman Road, MS 6201 Fort Belvoir, VA 22060-6201 T E C H N IC A L R E P O R T DTRA-TR-16-94 Radiation Effects in III-V...5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING / MONITORING AGENCY

  5. DX centers in III-V semiconductors under hydrostatic pressure

    International Nuclear Information System (INIS)

    Wolk, J.A.

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si Ga shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity

  6. III-V nanoelectronics and related surface/interface issues

    International Nuclear Information System (INIS)

    Hasegawa, Hideki

    2003-01-01

    The conventional logic gate architecture is not suitable for high-density integration of quantum devices which are non-robust and extremely structure- and charge-sensitive. In this paper, our novel hexagonal binary-decision-diagram (BDD) quantum circuit approach for III-V nanoelectronics is reviewed and related critical surface/interface issues for high-density integration are discussed. First, the basic concept and actual implementation method of our approach are explained, giving examples of novel BDD quantum integrated circuits where nanowire networks are controlled by nanoscale Schottky wrap gates. For high-density integration, growth of embedded sub-10 nm III-V quantum wire networks by selective molecular beam epitaxy (MBE) on patterned substrates is described, including effects of atomic hydrogen irradiation and kinetic control of wire width. The key processing issue lies in understanding and control of nanostructure surfaces/interfaces. Behavior of nanoscale Schottky gates, recent scanning tunneling microscopy (STM)/scanning tunneling spectroscopy (STS) studies of surface states, and successful removal of surface states by MBE-grown silicon interface control layer are discussed

  7. Hybrid III-V-on-Si Vertical Cavity laser for Optical Interconnects

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Semenova, Elizaveta; Chung, Il-Sug

    2013-01-01

    Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers.......Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers....

  8. Growth of Self-Catalyzed InP Nanowires by Metalorganic Chemical Vapour Deposition

    International Nuclear Information System (INIS)

    Lv Xiao-Long; Zhang Xia; Yan Xin; Liu Xiao-Long; Cui Jian-Gong; Li Jun-Shuai; Huang Yong-Qing; Ren Xiao-Min

    2012-01-01

    The fabrication of self-catalyzed InP nanowires (NWs) is investigated under different growth conditions. Indium droplets induced by surface reconstruction act as nucleation sites for NW growth. Vertical standing NWs with uniform cross sections are obtained under optimized conditions. It is confirmed that the growth rate of NWs is strongly affected by the surface diffusion adatoms while contributions from the direct impingement of vapor species onto the In droplets can be negligible. The results indicate that the droplet acts as an adatom collector rather than a catalyst. Moreover, the diffusion flow rate of adatoms increases with time at the beginning of growth and stabilizes as the growth proceeds

  9. Spectroscopic characterization of III-V semiconductor nanomaterials

    Science.gov (United States)

    Crankshaw, Shanna Marie

    III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored

  10. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Science.gov (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  11. Wide bandgap collector III-V double heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Flitcroft, R.M.

    2000-10-01

    This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ionisation coefficients over a range of electric fields beyond the scope of conventional optical injection techniques. This data has enabled the study of ''dead space'' effects in HBT collectors and have been used to develop an analytical model of impact ionisation which has been incorporated into an existing Ebers-Moll HBT simulator. This simulator has been shown to accurately reproduce current-voltage characteristics in both the devices used in this work and for external clients. (author)

  12. Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

    2016-01-01

    We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

  13. Heterogeneous Silicon III-V Mode-Locked Lasers

    Science.gov (United States)

    Davenport, Michael Loehrlein

    Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and surgical instruments. This work focuses on integrated-circuit mode-locked lasers: those that combine multiple optical and electronic functions and are manufactured together on a single chip. While this allows production at high volume and lower cost, the true potential of integration is to open applications for mode-locked laser diodes where solid state lasers cannot fit, either due to size and power consumption constraints, or where small optical or electrical paths are needed for high bandwidth. Unfortunately, most high power and highly stable mode-locked laser diode demonstrations in scientific literature are based on the Fabry-Perot resonator design, with cleaved mirrors, and are unsuitable for use in integrated circuits because of the difficulty of producing integrated Fabry-Perot cavities. We use silicon photonics and heterogeneous integration with III-V gain material to produce the most powerful and lowest noise fully integrated mode-locked laser diode in the 20 GHz frequency range. If low noise and high peak power are required, it is arguably the best performing fully integrated mode-locked laser ever demonstrated. We present the design methodology and experimental pathway to realize a fully integrated mode-locked laser diode. The construction of the device, beginning with the selection of an integration platform, and proceeding through the fabrication process to final optimization, is presented in detail. The dependence of mode-locked laser performance on a wide variety of design parameters is presented. Applications for integrated circuit mode-locked lasers are also discussed, as well as proposed methods for using integration to improve mode-locking performance to beyond the current state of the art.

  14. Mixing of III-V compound semiconductor superlattices

    International Nuclear Information System (INIS)

    Mei, Ping.

    1989-01-01

    In this work, the methods as well as mechanisms of III-V compound superlattice mixing are discussed, with particular attention on the AlGaAs based superlattice system. Comparative studies of ion-induced mixing showed two distinct effects resulting from ion implantation followed by a thermal anneal; i.e. collisional mixing and impurity induced mixing. It was found that Ga and As ion induced mixing are mainly due to the collisional effect, where the extent of the mixing can be estimated theoretically, with the parameters of ion mass, incident energy and the implant dose. The impurity effect was dominant for Si, Ge, Be, Zn and Te. Quantitative studies of impurity induced mixing have been conducted on samples doped with Si or Te during the growth process. It was discovered that Si induced AlGaAs superlattice mixing yielded an activation energy of approximately 4 eV for the Al diffusion coefficient with a high power law dependence of the prefactor on the Si concentration. In the Te doped AlGaAs superlattice the Al diffusion coefficient exhibited an activation energy of ∼3.0 eV, with a prefactor approximately proportional to the Te concentration. These results are of importance in examining the current diffusion models. Zn and Si induced InP/InGaAs superlattice mixing are examined. It was found that Zn predominantly induces cation interdiffusion, while Si induces comparable cation and anion interdiffusion. In addition, widely dispersed Zn rich islands form with Zn residing in the InP layers in the form of Zn 3 P 2 . With unstrained starting material, the layer bandgap disparity increases due to mixing induced strain, while in the Si diffused sample the mixed region would be expected to exhibit bandgaps intermediate between those of the original layers. Semiconductor superlattice mixing shows technological potential for optoelectronic device fabrication

  15. Relationship between type III-V radio and hard X-ray bursts

    International Nuclear Information System (INIS)

    Stewart, R.T.

    1978-01-01

    Type III-V radio bursts are found to be closely associated with impulsive hard X-ray bursts. Probably 0.1% to 1% of the fast electrons in the X-ray source region escape to heights >0.1 solar radii in the corona and excite the type III-V burst. (Auth.)

  16. Analysis of novel silicon and III-V solar cells by simulation and experiment; Analyse neuartiger Silizium- und III-V-Solarzellen mittels Simulation und Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hermle, Martin

    2008-11-27

    This work presents various simulation studies of silicon and III-V solar cells. For standard silicon solar cells, one of the critical parameters to obtain good performance, is the rear side recombination velocity. The optical and electrical differences of the different cell structures were determined. The optical differences and the effective recombination velocity Sback of the different rear side structures for 1 Ohmcm material were extracted. Beside standard silicon solar cells, back junction silicon solar cells were investigated. Especially the influence of the front surface field and the electrical shading due to the rear side, was investigated. In the last two chapters, III-V solar cells were analysed. For the simulation of III-V multi-junction solar cells, the simulation of the tunneldiode is the basic prerequisite. In this work, the numerical calibration of an GaAs tunneldiode was achieved by using an non-local tunnel model. Using this model, it was possible to successfully simulate a III-V tandem solar cell. The last chapter deals with an optimization of the III-V 3-junction cell for space applications. Especially the influence of the GaAs middle cell was investigated. Due to structural changes, the end-of-life efficiency was drastically increased.

  17. Growth and characterization of manganese doped III-V heterostructures; Herstellung und Charakterisierung von Mangan dotierten III-V Halbleiterheterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Wurstbauer, Ursula

    2008-04-15

    Subject of this thesis is the growth of III-V heterostructures doped with manganese by means of molecular beam epitaxy (MBE). The characterization was done primarily by magnetotransport measurements in the temperature range from 300 K to 20 mK and fields up to 19 T. Two different kind of Mn doped materials, ferromagnetic GaMnAs layers and Mn modulation doped magnetic two dimensional hole systems were studied. The first part focuses on the enhancement of the electric and magnetic properties of ferromagnetic properties and the integration of GaMnAs layers in more sophisticated heterostructures. Therefore, the crystal quality and the influence of the buffer layer beneath the magnetic layer are crucial. The MBE-growth of ferromagnetic GaMnAs layers on (001), (311)A and (311)A was successfully achieved with present values of the Curie-temperature (TC). Additionally, the growth of ferromagnetic GaMnAs layers on nonpolar (110) substrates and on cleaved [110] edges was established. An application of the latter was the investigation of magnetic bipolar junctions. Magnetic two dimensional hole gases (M2DHG) has been realized by the use of In0.75Al0.25As/In0.75Ga0.25As/InAs quantum well (QW) structures. It is necessary to grow a buffer layer for strain relaxation due to the lattice mismatch by gradually increasing the In mole fraction. Magnetotransport measurements were carried out on Si doped two-dimensional electron gases (2DEG) and on Mn doped M2DHGs. From magnetotransport measurements on the M2DHGs we see some interesting features, in particular in the mK region. From the 2DEGs and all non inverted doped M2DEGs weak localization and weak antilocalization effects can be observed in the low field region. Whereas all M2DHGs with an inverted doping layer show strong localization effects and a metal insulator transition dependent on the applied magnetic field perpendicular to the QW. In the high field region Shubnikov-de-Haas oscillations in the longitudinal resistance and

  18. Methods for enhancing P-type doping in III-V semiconductor films

    Science.gov (United States)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  19. Interpreting Interfacial Structure in Cross-Sectional STM Images of III-V Semiconductor Heterostructures

    National Research Council Canada - National Science Library

    Nosho, B. Z; Barvosa-Carter, W; Yang, M. J; Bennett, B. R; Whitman, L. J

    2000-01-01

    ...) can be used for the study of III-V heterostructure interfaces. The interpretation of interfacial structure in XSTM images is impeded by the fact that only every other III or V plane as grown on the (001...

  20. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — We are proposing to utilize quantum dots to develop a super high-efficiency multijunction III-V solar cell for space. In metamorphic triple junction space solar...

  1. III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

    Science.gov (United States)

    Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

    2018-04-01

    Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

  2. In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

    DEFF Research Database (Denmark)

    Ambrosini, S.; Wagner, Jakob Birkedal; Booth, Tim

    2011-01-01

    Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stacking...... faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment....

  3. III-V/Si wafer bonding using transparent, conductive oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Tamboli, Adele C., E-mail: Adele.Tamboli@nrel.gov; Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States); Perl, Emmett E. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

    2015-06-29

    We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

  4. An ultrahigh vacuum, low-energy ion-assisted deposition system for III-V semiconductor film growth

    Science.gov (United States)

    Rohde, S.; Barnett, S. A.; Choi, C.-H.

    1989-06-01

    A novel ion-assisted deposition system is described in which the substrate and growing film can be bombarded with high current densities (greater than 1 mA/sq cm) of very low energy (10-200 eV) ions. The system design philosophy is similar to that used in III-V semiconductor molecular-beam epitaxy systems: the chamber is an all-metal ultrahigh vacuum system with liquid-nitrogen-cooled shrouds, Knudsen-cell evaporation sources, a sample insertion load-lock, and a 30-kV reflection high-energy electron diffraction system. III-V semiconductor film growth is achieved using evaporated group-V fluxes and group-III elemental fluxes sputtered from high-purity targets using ions extracted from a triode glow discharge. Using an In target and an As effusion cell, InAs deposition rates R of 2 microns/h have been obtained. Epitaxial growth of InAs was observed on both GaSb(100) and Si(100) substrates.

  5. Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

    DEFF Research Database (Denmark)

    Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.

    2010-01-01

    Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections...... lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III...

  6. Monte-Carlo simulation of crystallographical pore growth in III-V-semiconductors

    International Nuclear Information System (INIS)

    Leisner, Malte; Carstensen, Juergen; Foell, Helmut

    2011-01-01

    The growth of crystallographical pores in III-V-semiconductors can be understood in the framework of a simple model, which is based on the assumption that the branching of pores is proportional to the current density at the pore tips. The stochastic nature of this model allows its implementation into a three-dimensional Monte-Carlo-simulation of pore growth. The simulation is able to reproduce the experimentally observed crysto pore structures in III-V-semiconductors in full quantitative detail. The different branching probabilities for different semiconductors, as well as doping levels, can be deduced from the specific passivation behavior of the semiconductor-electrolyte-interface at the pore tips.

  7. Photoelectrochemistry of III-V epitaxial layers and nanowires for solar energy conversion

    Science.gov (United States)

    Parameshwaran, Vijay; Enck, Ryan; Chung, Roy; Kelley, Stephen; Sampath, Anand; Reed, Meredith; Xu, Xiaoqing; Clemens, Bruce

    2017-05-01

    III-V materials, which exhibit high absorption coefficients and charge carrier mobility, are ideal templates for solar energy conversion applications. This work describes the photoelectrochemistry research in several IIIV/electrolyte junctions as an enabler for device design for solar chemical reactions. By designing lattice-matched epitaxial growth of InGaP and GaP on GaAs and Si, respectively, extended depletion region electrodes achieve photovoltages which provide an additional boost to the underlying substrate photovoltage. The InGaP/GaAs and GaP/Si electrodes drive hydrogen evolution currents under aqueous conditions. By using nanowires of InN and InP under carefully controlled growth conditions, current and capacitance measurements are obtained to reveal the nature of the nanowire-electrolyte interface and how light is translated into photocurrent for InP and a photovoltage in InN. The materials system is expanded into the III-V nitride semiconductors, in which it is shown that varying the morphology of GaN on silicon yields insights to how the interface and light conversion is modulated as a basis for future designs. Current extensions of this work address growth and tuning of the III-V nitride electrodes with doping and polarization engineering for efficient coupling to solar-driven chemical reactions, and rapid-throughput methods for III-V nanomaterials synthesis in this materials space.

  8. Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

    Directory of Open Access Journals (Sweden)

    Kan Li

    2016-06-01

    Full Text Available Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

  9. Concomitant glenohumeral pathologies in high-grade acromioclavicular separation (type III - V).

    Science.gov (United States)

    Markel, Jochen; Schwarting, Tim; Malcherczyk, Dominik; Peterlein, Christian-Dominik; Ruchholtz, Steffen; El-Zayat, Bilal Farouk

    2017-11-10

    Acromioclavicular joint (ACJ) dislocations are common injuries of the shoulder associated with physical activity. The diagnosis of concomitant injuries proves complicated due to the prominent clinical symptoms of acute ACJ dislocation. Because of increasing use of minimally invasive surgery techniques concomitant pathologies are diagnosed more often than with previous procedures. The aim of this study was to identify the incidence of concomitant intraarticular injuries in patients with high-grade acromioclavicular separation (Rockwood type III - V) as well as to reveal potential risk constellations. The concomitant pathologies were compiled during routine arthroscopically assisted treatment in altogether 163 patients (147 male; 16 female; mean age 36.8 years) with high-grade acromioclavicular separation (Rockwood type III: n = 60; Rockwood type IV: n = 6; Rockwood type V: n = 97). Acromioclavicular separation occurred less often in women than men (1:9). In patients under 35, the most common cause for ACJ dislocation was sporting activity (37.4%). Rockwood type V was observed significantly more often than the other types with 57.5% (Rockwood type III = 36.8%, Rockwood type IV 3.7%). Concomitant pathologies were diagnosed in 39.3% of the patients with that number rising to as much as 57.3% in patients above 35 years. Most common associated injuries were rotator cuff injuries (32.3%), chondral defects (30.6%) and SLAP-lesions (22.6%). Of all patients, 8.6% needed additional reconstructive surgery. Glenohumeral injuries are a much more common epiphenomenon during acromioclavicular separation than previously ascertained. High risk group for accompanying injuries are patients above 35 years with preexisting degenerative disease. The increasing use of minimally invasive techniques allows for an easier diagnosis and simultaneous treatment of the additional pathologies.

  10. Exploring Cryogenic Focused Ion Beam Milling as a Group III-V Device Fabrication Tool

    Science.gov (United States)

    2013-09-01

    boiling, triple , and critical points of the elements” in CRC Handbook of Chemistry and Physics, 92nd ed., Boca Raton, FL: CRC press, 2011-2012, p. 4...The most widely used ion source in FIB instruments is a gallium (Ga) liquid metal ion source (LMIS) [4]. Gallium is attractive as an ion source...Figure 3b. EDS spectra were captured at different points across the patterned region of the room temperature milled sample, as indicated in Figure 4

  11. Cr-doped III-V nitrides: Potential candidates for spintronics

    KAUST Repository

    Amin, Bin

    2011-02-19

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

  12. Efficient n-type doping of zinc-blende III-V semiconductor nanowires

    Science.gov (United States)

    Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

    2014-03-01

    We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

  13. III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Ringel, Steven [The Ohio State Univ., Columbus, OH (United States); Carlin, John A [The Ohio State Univ., Columbus, OH (United States); Grassman, Tyler [The Ohio State Univ., Columbus, OH (United States)

    2018-04-17

    This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of our recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first

  14. Coherent-potential approximation for the lattice vibrations of mixed III-V crystals

    International Nuclear Information System (INIS)

    Kleinert, P.

    1984-01-01

    The coherent-potential approximation (CPA) is applied to the lattice dynamics of some III-V mixed crystals. The calculations are based on an eleven-parameter rigid-ion model (RIM 11). Explicit results are reported for the one-mode system In/sub 1-c/Ga/sub c/P and the two mixed-mode crystals In/sub 1-c/Ga/sub c/Sb and GaSb/sub 1-c/As/sub c/. Both, the reflectivity spectra and the composition dependence of vibrations at the GAMMA and X points are compared with existing experimental data. Force-constant changes are considered by the virtual-crystal approximation (VCA). The CPA theory is uniquely successful for III-V mixed-mode systems, which appear to switch from one-mode to two-mode behaviour. (author)

  15. David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices

    Science.gov (United States)

    Riel, Heike

    Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.

  16. Cr-doped III-V nitrides: Potential candidates for spintronics

    KAUST Repository

    Amin, Bin; Arif, Suneela K.; Ahmad, Iftikhar; Maqbool, Muhammad; Ahmad, Roshan; Goumri-Said, Souraya; Prisbrey, Keith A.

    2011-01-01

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

  17. Blocking of indium incorporation by antimony in III-V-Sb nanostructures

    International Nuclear Information System (INIS)

    Sanchez, A M; Beltran, A M; Ben, T; Molina, S I; Beanland, R; Gass, M H; De la Pena, F; Walls, M; Taboada, A G; Ripalda, J M

    2010-01-01

    The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.

  18. Low Thermal Budget Fabrication of III-V Quantum Nanostructures on Si Substrates

    International Nuclear Information System (INIS)

    Bietti, S; Somaschini, C; Sanguinetti, S; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

    2010-01-01

    We show the possibility to integrate high quality III-V quantum nanostructures tunable in shape and emission energy on Si-Ge Virtual Substrate. Strong photoemission is observed, also at room temperature, from two different kind of GaAs quantum nanostructures fabricated on Silicon substrate. Due to the low thermal budget of the procedure used for the fabrication of the active layer, Droplet Epitaxy is to be considered an excellent candidate for implementation of optoelectronic devices on CMOS circuits.

  19. Observation of electron polarization above 80% in photoemission from strained III-V compounds

    International Nuclear Information System (INIS)

    Garwin, E.L.; Maruyama, T.; Prepost, R.; Zapalac, G.H.

    1992-02-01

    Spin-polarized electron photoemission has been investigated for strained III--V compounds; (1) strained In x Ga 1-x As epitaxially grown on a GaAs substrate, and (2) strained GaAs grown on a GaAs 1-x P x buffer layer. The lattice mismatched heterostructure results in a highly strained epitaxial layer, and electron spin polarization as high as 90% has been observed

  20. III-V quantum light source and cavity-QED on silicon.

    Science.gov (United States)

    Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

    2013-01-01

    Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

  1. Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

    Science.gov (United States)

    Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

    2015-12-22

    Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

  2. Morphology of interior interfaces in dilute nitride III/V material systems; Morphologie innerer Grenzflaechen in verduennt stickstoffhaltigen III/V-Materialsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Oberhoff, S.

    2007-12-03

    This study aims to clarify structure formation processes in dilute N-containing III/V-based material systems, using highly selective etching methods and subsequent atomic force microscopy (AFM) to expose and analyse interior interfaces. In the first part of this study it was directly proved for the first time that adding Sb during growth interruption inhibits the GI-induced structural phase transition and reduces the diffusivity on GaAs and (GaIn)(NAs) surfaces. However, applying Sb during GI does not affect the driving force of the structural phase transition. Therefore a fundamental analysis about the incorporation of Sb into GaAs, Ga(NAs) and (GaIn)(NAs) was carried out in the second part of the study. Using a combination of high resolution X-ray diffraction, transmission electron microscopy and SIMS measurements, it was verified that incorporating Sb into (GaIn)(NAs) causes an increase of the In content and a decrease of the N content. In the third part of the study, novel etching methods for the GaP-based material system Ga(NAsP) are introduced which provide the opportunity to analyse structure formation processes on interior interfaces in this material system by AFM. (orig.)

  3. Hydrogen-Mediated Nitrogen Clustering in Dilute III-V Nitrides

    Science.gov (United States)

    Du, Mao-Hua; Limpijumnong, Sukit; Zhang, S. B.

    2006-08-01

    First-principles calculation reveals multi-N clusters to be the ground states for hydrogenated N in dilute III-V nitrides. While hydrogenation of a single N, forming H2*(N), can relax the large strain induced by the size-mismatched N, formation of the clusters will relax the strain even more effectively. This suppresses the formation of H2*(N), the existence of which has recently been debated. More importantly, postgrowth dehydrogenation of the N-H clusters provides an explanation to the observed metastable bare N clusters in GaAsN grown by gas-source molecular beam epitaxy or metal-organic chemical vapor deposition.

  4. General theory of the transverse dielectric constant of III-V semiconducting compounds

    Science.gov (United States)

    Kahen, K. B.; Leburton, J. P.

    1985-01-01

    A general model of the transverse dielectric constant of III-V compounds is developed using a hybrid method which combines the kp method with a nonlocal pseudopotential calculation. In this method the Brillouin zone is partitioned into three regions by expanding the energy bands and matrix elements about the F, X, and L symmetry points. The real and imaginary parts of the dielectric constant are calculated as a sum of the individual contributions of each region. By using this partition method, it is possible to get good insight into the dependence of the dielectric constant on the shape of the band structure.

  5. Ultracompact electro-optic phase modulator based on III-V-on-silicon microdisk resonator.

    Science.gov (United States)

    Lloret, J; Kumar, R; Sales, S; Ramos, F; Morthier, G; Mechet, P; Spuesens, T; Van Thourhout, D; Olivier, N; Fédéli, J-M; Capmany, J

    2012-06-15

    A novel ultracompact electro-optic phase modulator based on a single 9 μm-diameter III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic waveguide is presented. Modulation is enabled by effective index modification through carrier injection. Proof-of-concept implementation involving binary phase shift keying modulation format is assembled. A power imbalance of ∼0.6  dB between both symbols and a modulation rate up to 1.8 Gbps are demonstrated without using any special driving technique.

  6. On the use of the plasma in III-V semiconductor processing

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, G.; Capezzuto, P.; Losurdo, M. [C.N.R.-Centro di Studio per la Chimica dei Plasmi Dipartimento di Chimica-Universita di Bari via Orabona, 4-70126 Bari (Italy)

    1996-03-01

    The manufacture of usable devices based on III-V semiconductor materials is a complex process requiring epilayer growth, anisotropic etching, defect passivation, surface oxidation and substrate preparation processes. The combination of plasma based methods with metalorganic chemical vapor deposition (MOCVD) offers some real advantages: {ital in} {ital situ} production and preactivation of PH{sub 3} and sample preparation using H-atom. The detailed understanding and use of the plasma (using mass spectrometry, optical emission spectroscopy, laser reflectance interferometry and spectroscopic ellipsometry) as applied to InP material is discussed. {copyright} {ital 1996 American Institute of Physics.}

  7. Study of III-V semiconductor band structure by synchrotron photoemission

    International Nuclear Information System (INIS)

    Williams, G.P.; Cerrina, F.; Anderson, J.; Lapeyre, G.J.; Smith, R.J.; Hermanson, J.; Knapp, J.A.

    1982-01-01

    Angle-resolved synchrotron photoemission studies of six III-V semiconductors have been carried out. For emission normal to the (110) plane of these materials, peaks in the experimental spectra were identified with the bands involved in the transitions, and the critical point energies X 3 , X 5 , and Σ 1 /sup min/, were determined. The data indicate that k perpendicular is conserved in the transitions. Comparison of the data with theoretical bands permits an evaluation of k perpendicular associated with the experimentally observed transition, and from this information the bands were plotted out

  8. Self-catalyzed photo-initiated RAFT polymerization for fabrication of fluorescent polymeric nanoparticles with aggregation-induced emission feature.

    Science.gov (United States)

    Zeng, Guangjian; Liu, Meiying; Jiang, Ruming; Huang, Qiang; Huang, Long; Wan, Qing; Dai, Yanfeng; Wen, Yuanqing; Zhang, Xiaoyong; Wei, Yen

    2018-02-01

    In recent years, the fluorescent polymeric nanoparticles (FPNs) with aggregation-induced emission (AIE) feature have been extensively exploited in various biomedical fields owing to their advantages, such as low toxicity, biodegradation, excellent biocompatibility, good designability and optical properties. Therefore, development of a facile, efficient and well designable strategy should be of great importance for the biomedical applications of these AIE-active FPNs. In this work, a novel method for the fabrication of AIE-active FPNs has been developed through the self-catalyzed photo-initiated reversible addition fragmentation chain transfer (RAFT) polymerization using an AIE dye containing chain transfer agent (CTA), which could initiate the RAFT polymerization under light irradiation. The results suggested that the final AIE-active FPNs (named as TPE-poly(St-PEGMA)) showed great potential for biomedical applications owing to their optical and biological properties. More importantly, the method described in the work is rather simple and effective and can be further extended to prepare many other different AIE-active FPNs owing to the good monomer adoptability of RAFT polymerization. Copyright © 2017 Elsevier B.V. All rights reserved.

  9. Pulsed laser deposition of II-VI and III-V semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica

    1998-12-01

    Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

  10. Mechanical properties of some binary, ternary and quaternary III-V compound semiconductor alloys

    International Nuclear Information System (INIS)

    Navamathavan, R.; Arivuoli, D.; Attolini, G.; Pelosi, C.; Choi, Chi Kyu

    2007-01-01

    Vicker's microindentation tests have been carried out on InP/InP, GaAs/InP, InGaAs/InP and InGaAsP/InP III-V compound semiconductor alloys. The detailed mechanical properties of these binary, ternary and quaternary epilayers were determined from the indentation experiments. Microindentation studies of (1 1 1) GaAs/InP both A and B faces show that the hardness value increases with load and attains a constant for further increase in load and the microhardness values were found to lie between 3.5 and 4.0 GPa. The microhardness values of InGaAs/InP epilayers with different thickness were found to lie between 3.93 and 4.312 GPa. The microhardness values of InGaAsP/InP with different elemental composition were found to lie between 5.08 and 5.73 GPa. The results show that the hardness of the quaternary alloy drastically increases, the reason may be that the increase in As concentration hardens the lattice when phosphorous concentration is less and hardness decreases when phosphorous is increased. It was interestingly observed that the hardness value increases as we proceed from binary to quaternary III-V compound semiconductor alloys

  11. Dense Plasma Focus-Based Nanofabrication of III-V Semiconductors: Unique Features and Recent Advances.

    Science.gov (United States)

    Mangla, Onkar; Roy, Savita; Ostrikov, Kostya Ken

    2015-12-29

    The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III-V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III-V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well.

  12. Metabolomic and proteomic biomarkers for III-V semiconductors: Chemical-specific porphyrinurias and proteinurias

    International Nuclear Information System (INIS)

    Fowler, Bruce A.; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2005-01-01

    A pressing need exists to develop and validate molecular biomarkers to assess the early effects of chemical agents, both individually and in mixtures. This is particularly true for new and chemically intensive industries such as the semiconductor industry. Previous studies from this laboratory and others have demonstrated element-specific alterations of the heme biosynthetic pathway for the III-V semiconductors gallium arsenide (GaAs) and indium arsenide (InAs) with attendant increased urinary excretion of specific heme precursors. These data represent an example of a metabolomic biomarker to assess chemical effects early, before clinical disease develops. Previous studies have demonstrated that the intratracheal or subcutaneous administration of GaAs and InAs particles to hamsters produces the induction of the major stress protein gene families in renal proximal tubule cells. This was monitored by 35-S methionine labeling of gene products followed by two-dimensional gel electrophoresis after exposure to InAs particles. The present studies examined whether these effects were associated with the development of compound-specific proteinuria after 10 or 30 days following subcutaneous injection of GaAs or InAs particles in hamsters. The results of these studies demonstrated the development of GaAs- and InAs-specific alterations in renal tubule cell protein expression patterns that varied at 10 and 30 days. At the 30-day point, cells in hamsters that received InAs particles showed marked attenuation of protein expression, suggesting inhibition of the stress protein response. These changes were associated with GaAs and InAs proteinuria patterns as monitored by two-dimensional gel electrophoresis and silver staining. The intensity of the protein excretion patterns increased between the 10- and 30-day points and was most pronounced for animals in the 30-day InAs treatment group. No overt morphologic signs of cell death were seen in renal tubule cells of these animals

  13. Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Boettcher, Shannon [Univ. of Oregon, Eugene, OR (United States); Greenaway, Ann [Univ. of Oregon, Eugene, OR (United States); Boucher, Jason [Univ. of Oregon, Eugene, OR (United States); Aloni, Shaul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-02-10

    Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substrates conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial

  14. Pressure-induced structural change of liquid InAs and the systematics of liquid III-V compounds

    International Nuclear Information System (INIS)

    Hattori, T.; Tsuji, K.; Miyata, Y.; Sugahara, T.; Shimojo, F.

    2007-01-01

    To understand the pressure-induced structural changes of liquid III-V compounds systematically, the pressure dependence of l-InAs was investigated using the synchrotron x-ray diffraction and an ab initio molecular-dynamics simulation (AIMD). The x-ray diffraction experiments revealed that the liquid changes its compression behavior from a nearly uniform type to a nonuniform one around 9 GPa. Corresponding to this change, the coordination number (China), which is maintained up to 9 GPa, markedly increases from 6.0 to 7.5. The AIMD simulation revealed that this change is related to the change in the pressure dependence of all three pair correlations. In particular, a marked change is observed in the As-As correlation; in the low-pressure region, the position of the first peak in g AsAs (r), r AsAs , increases while maintaining the CN AsAs , but in the high-pressure region, the r AsAs stops increasing and the CN AsAs begins to increase. The AIMD simulation also revealed that each partial structure of l-InAs is similar to that for the pure-element liquid with the same valence electron number. Upon compression, each partial structure approaches the respective one for a heavier element in the same group. These findings suggest that the structures of liquid compounds are locally controlled by the number of the valence electrons in each ion pair and that the change in each partial structure obeys the empirical rule that the high-pressure state resembles the ambient state of a heavier element in the same group. Comparing the pressure-induced structural change of l-InAs to those of other liquid III-V compounds (GaSb and InSb) has revealed that, although the high-pressure behaviors of these three liquids are apparently different, their structural changes are systematically understood by a common structural sequence. This systematics originates from the same effect on each partial structure between increasing the atomic number and the pressurization

  15. Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE

    Science.gov (United States)

    Nattermann, L.; Ludewig, P.; Sterzer, E.; Volz, K.

    2017-07-01

    Bi containing III/V semiconductors are frequently mentioned for their importance as part of the next generation of optoelectronic devices. Bi containing ternary and quaternary materials like Ga(AsBi), Ga(NAsBi) or Ga(PAsBi) are promising candidates to meet the requirements for new laser structures for telecommunications and solar cell applications. However, in previous studies it was determined that the incorporation of sufficient amounts of Bi still poses a challenge, especially when using MOVPE (metalorganic vapour phase epitaxy) as the growth technique. In order to figure out which mechanisms are responsible for the limitation of Bi incorporation, this work deals with the question of whether there is a relationship between strain, induced by the large Bi atoms, and the saturation level of Bi incorporation in Ga(AsBi). Ga(NAsBi) structures were grown by MOVPE at a low temperature, 400 °C, and compared to Ga(PAsBi) as well as Ga(AsBi) growth. By using the two group V atoms P and N, which have a smaller covalent radius than Bi, the effect of local strain compensation was investigated systematically. The comparison of Bi incorporation in the two quaternary materials systems proved the importance of local strain for the limitation of Bi incorporation, in addition to other effects, like Bi surface coverage and hydrocarbon groups at the growth surface. This, of course, also opens up ways to strain-state-engineer the Bi incorporation in semiconductor alloys.

  16. New insights into thorium and uranium oxo-arsenic (III/V) and oxo-phosphates (V) crystal chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Na

    2015-12-11

    The fundamental chemistry of actinides is of great interest owing to the diverse number of valence states and complex coordination chemistry of the actinides. The phases based on actinides and oxo-salt fragments have been under thorough investigation in the last decades. These compounds can be widely found in nature and they affect the migration process of actinides in nature. A better understanding of the fundamental coordination chemistry of actinide compounds with oxo-salts of group V elements is not only important for understanding the actinides behavior within the migration process but can also be used to understand actinide properties in phosphate ceramics. Concerning the radioactive issues, the less radioactive early actinides (i.e. U, Th) can be taken as modeling elements to study the crystal chemistry of the transuranic elements (Np, Pu) without the major handling problems. This can be done as Th(IV) has a very similar coordination chemistry with An(IV) and U(VI) can be chosen as a modeling element for transuranic elements in higher valence states. Therefore, a systematic research on the actinides (U, Th) bearing phases with tetrahedral oxo-anions such as phosphates and arsenates have been performed in this work. High temperature (HT) solid state reaction, High pressure high temperature (HP-HT) solid state reaction and the hydrothermal method were the methods of choice for synthesizing actinide bearing oxo-arsenic(III/V) and oxo- phosphorus(V) phases in the past three years. As a result, numerous novel compounds containing actinides were obtained. The structures of all compounds were determined using single crystal X-ray diffraction data. Raman spectroscopy, EDS, DSC and high temperature powder X-ray diffraction (HT-PXRD) measurements were implemented to characterize the chemical and physical properties of the obtained compounds. The core of this dissertation is a fundamental study of the crystal chemistry of actinides (Th, U) oxo-arsenic (III/V) and oxo

  17. New insights into thorium and uranium oxo-arsenic (III/V) and oxo-phosphates (V) crystal chemistry

    International Nuclear Information System (INIS)

    Yu, Na

    2015-01-01

    The fundamental chemistry of actinides is of great interest owing to the diverse number of valence states and complex coordination chemistry of the actinides. The phases based on actinides and oxo-salt fragments have been under thorough investigation in the last decades. These compounds can be widely found in nature and they affect the migration process of actinides in nature. A better understanding of the fundamental coordination chemistry of actinide compounds with oxo-salts of group V elements is not only important for understanding the actinides behavior within the migration process but can also be used to understand actinide properties in phosphate ceramics. Concerning the radioactive issues, the less radioactive early actinides (i.e. U, Th) can be taken as modeling elements to study the crystal chemistry of the transuranic elements (Np, Pu) without the major handling problems. This can be done as Th(IV) has a very similar coordination chemistry with An(IV) and U(VI) can be chosen as a modeling element for transuranic elements in higher valence states. Therefore, a systematic research on the actinides (U, Th) bearing phases with tetrahedral oxo-anions such as phosphates and arsenates have been performed in this work. High temperature (HT) solid state reaction, High pressure high temperature (HP-HT) solid state reaction and the hydrothermal method were the methods of choice for synthesizing actinide bearing oxo-arsenic(III/V) and oxo- phosphorus(V) phases in the past three years. As a result, numerous novel compounds containing actinides were obtained. The structures of all compounds were determined using single crystal X-ray diffraction data. Raman spectroscopy, EDS, DSC and high temperature powder X-ray diffraction (HT-PXRD) measurements were implemented to characterize the chemical and physical properties of the obtained compounds. The core of this dissertation is a fundamental study of the crystal chemistry of actinides (Th, U) oxo-arsenic (III/V) and oxo

  18. Structural properties of III-V zinc-blende semiconductors under pressure

    International Nuclear Information System (INIS)

    Froyen, S.; Cohen, M.L.

    1983-01-01

    The pseudopotential method within the local-density approximation is used to investigate the static and structural properties of some III-V compound semiconductors. Comparisons of calculated total energies as a function of volume and structure yield information about solid-solid phase transformations. At high pressures the results indicate that several metallic structures are lower in energy than the zinc-blende structure. From our results the compounds (AlP, AlAs, GaP, and GaAs) can be divided into two classes. In the Ga compounds, we find a pressure-induced phase transformation to either rocksalt, β-Sn, or NiAs, whereas in the Al compounds rocksalt and NiAs are stabilized with respect to β-Sn. All structures except zinc blende are metallic. We discuss the electronic structure of each phase and show how it relates to structural stability

  19. New III-V cell design approaches for very high efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. (Purdue Univ., Lafayette, IN (United States))

    1993-04-01

    This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell's efficiency less dependent on materialquality.

  20. Hydrogen-mediated Nitrogen Clustering in Dilute III-V Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Du, M.-H.; Limpijumnong, S.; Zhang, S. B

    2006-01-01

    First-principles calculation reveals multi-N clusters to be the ground states for hydrogenated N in dilute III-V nitrides. While hydrogenation of a single N, forming H*{sub 2}(N), can relax the large strain induced by the size-mismatched N, formation of the clusters will relax the strain even more effectively. This suppresses the formation of H*{sub 2}(N), the existence of which has recently been debated. More importantly, postgrowth dehydrogenation of the N-H clusters provides an explanation to the observed metastable bare N clusters in GaAsN grown by gas-source molecular beam epitaxy or metal-organic chemical vapor deposition.

  1. Acousto-optic modulation of III-V semiconductor multiple quantum wells

    International Nuclear Information System (INIS)

    Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.

    1996-01-01

    We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society

  2. Optical analysis of a III-V-nanowire-array-on-Si dual junction solar cell.

    Science.gov (United States)

    Chen, Yang; Höhn, Oliver; Tucher, Nico; Pistol, Mats-Erik; Anttu, Nicklas

    2017-08-07

    A tandem solar cell consisting of a III-V nanowire subcell on top of a planar Si subcell is a promising candidate for next generation photovoltaics due to the potential for high efficiency. However, for success with such applications, the geometry of the system must be optimized for absorption of sunlight. Here, we consider this absorption through optics modeling. Similarly, as for a bulk dual-junction tandem system on a silicon bottom cell, a bandgap of approximately 1.7 eV is optimum for the nanowire top cell. First, we consider a simplified system of bare, uncoated III-V nanowires on the silicon substrate and optimize the absorption in the nanowires. We find that an optimum absorption in 2000 nm long nanowires is reached for a dense array of approximately 15 nanowires per square micrometer. However, when we coat such an array with a conformal indium tin oxide (ITO) top contact layer, a substantial absorption loss occurs in the ITO. This ITO could absorb 37% of the low energy photons intended for the silicon subcell. By moving to a design with a 50 nm thick, planarized ITO top layer, we can reduce this ITO absorption to 5%. However, such a planarized design introduces additional reflection losses. We show that these reflection losses can be reduced with a 100 nm thick SiO 2 anti-reflection coating on top of the ITO layer. When we at the same time include a Si 3 N 4 layer with a thickness of 90 nm on the silicon surface between the nanowires, we can reduce the average reflection loss of the silicon cell from 17% to 4%. Finally, we show that different approximate models for the absorption in the silicon substrate can lead to a 15% variation in the estimated photocurrent density in the silicon subcell.

  3. Narrow-linewidth Si/III-V lasers: A study of laser dynamics and nonlinear effects

    Science.gov (United States)

    Vilenchik, Yaakov Yasha

    Narrow-linewidth lasers play an important role in a wide variety of applications, from sensing and spectroscopy to optical communication and on-chip clocks. Current narrow-linewidth systems are usually implemented in doped fibers and are big, expensive, and power-hungry. Semiconductor lasers compete favorably in size, cost, and power consumption, but their linewidth is historically limited to the sub-MHz regime. However, it has been recently demonstrated that a new design paradigm, in which the optical energy is stored away from the active region in a composite high-Q resonator, has the potential to dramatically improve the coherence of the laser. This work explores this design paradigm, as applied on the hybrid Si/III-V platform. It demonstrates a record sub-KHz white-noise-floor linewidth. It further shows, both theoretically and experimentally, that this strategy practically eliminates Henry's linewidth enhancement by positioning a damped relaxation resonance at frequencies as low as 70 MHz, yielding truly quantum limited devices at frequencies of interest. In addition to this empirical contribution, this work explores the limits of performance of this platform. Here, the effect of two-photon-absorption and free-carrier-absorption are analyzed, using modified rate equations and Langevin force approach. The analysis predicts that as the intra-cavity field intensity builds up in the high-Q resonator, non-linear effects cause a new domain of performance-limiting factors. Steady-state behavior, laser dynamics, and frequency noise performance are examined in the context of this unique platform, pointing at the importance of nonlinear effects. This work offers a theoretical model predicting laser performance in light of nonlinear effects, obtaining a good agreement with experimental results from fabricated high-Q Si/III-V lasers. In addition to demonstrating unprecedented semiconductor laser performance, this work establishes a first attempt to predict and demonstrate

  4. High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

    Energy Technology Data Exchange (ETDEWEB)

    Hubbard, Seth

    2012-09-12

    The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

  5. Analytical Electron Diffraction from Iii-V and II-Vi Semiconductors

    Science.gov (United States)

    Spellward, Paul

    Available from UMI in association with The British Library. This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of Cd_{rm x}Hg _{rm 1-x}Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-based compositional determination techniques is described. The use of HOLZ deficiency lines to infer composition from a lattice parameter measurement is evaluated. In the case of Cd_{ rm x}Hg_{rm 1-x}Te, it is found to be inferior to other techniques developed. Studies of dynamical aspects of HOLZ diffraction can yield information about the dispersion surface from which a measure of composition may be obtained. This technique is evaluated for Al_{rm x}Ga_{rm 1-x} As, in which it is found to be of some use, and for Cd_{rm x}Hg _{rm 1-x}Te, in which the large Debye-Waller factor associated with mercury in discovered to render the method of little value. A number of critical voltages may be measured in medium voltage TEMs. The (111) zone axis critical voltage of Cd_{rm x}Hg _{rm 1-x}Te is found to vary significantly with x and forms the basis of an accurate technique for composition measurement in that ternary compound. Other critical voltage phenomena are investigated. In Al _{rm x}Ga_ {rm 1-x}As and other light ternaries, a non-systematic critical voltage is found to vary with x, providing a good indicator of composition. Critical voltage measurements may be made by conventional CBED or by various other techniques, which may also simultaneously yield information on the spatial variation of composition. The

  6. Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers

    International Nuclear Information System (INIS)

    Umlor, M.T.; Keeble, D.J.; Cooke, P.W.

    1994-01-01

    A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al 0.32 Ga 0.68 As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al 0.32 Ga 0.68 :Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700 degrees C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450 degrees C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500 degrees C. The nature of the defect was shown to be different for material grown at 350 and 230 degrees C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230 degrees C, respectively

  7. III-V semiconductors for photoelectrochemical applications: surface preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Fertig, Dominic; Schaechner, Birgit; Calvet, Wofram; Kaiser, Bernhard; Jaegermann, Wolfram [TU Darmstadt, Fachbereich Materialwissenschaft, Fachgebiet Oberflaechenforschung (Germany)

    2011-07-01

    III-V semiconductors are promising reference systems for photoelectrochemical energy conversion. Therefore we have studied the influence of different acids and acidic solutions on the etching of p-doped gallium-arsenide and gallium-phosphide single crystal surfaces. From our experiments we conclude, that etching with HCl and subsequent annealing up to 450 C gives the best results for the removal of the carbonates and the oxides without affecting the quality of the sample. By treating the surfaces with ''piranha''-solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O/7:2:1), the creation of an oxide layer with well defined thickness can be achieved. For the creation of an efficient photoelectrochemical cell, Pt nanoparticles have been deposited from solution. These surfaces are then characterized by photoelectron spectroscopy and AFM. Further electrochemical measurements try to correlate the effect of the surface cleaning and the Pt deposition on the photoactivity of the GaAs- and GaP-semiconductors.

  8. Spin Relaxation in III-V Semiconductors in various systems: Contribution of Electron-Electron Interaction

    Science.gov (United States)

    Dogan, Fatih; Kesserwan, Hasan; Manchon, Aurelien

    2015-03-01

    In spintronics, most of the phenomena that we are interested happen at very fast time scales and are rich in structure in time domain. Our understanding, on the other hand, is mostly based on energy domain calculations. Many of the theoretical tools use approximations and simplifications that can be perceived as oversimplifications. We compare the structure, material, carrier density and temperature dependence of spin relaxation time in n-doped III-V semiconductors using Elliot-Yafet (EY) and D'yakanov-Perel'(DP) with real time analysis using kinetic spin Bloch equations (KSBE). The EY and DP theories fail to capture details as the system investigated is varied. KSBE, on the other hand, incorporates all relaxation sources as well as electron-electron interaction which modifies the spin relaxation time in a non-linear way. Since el-el interaction is very fast (~ fs) and spin-conserving, it is usually ignored in the analysis of spin relaxation. Our results indicate that electron-electron interaction cannot be neglected and its interplay with the other (spin and momentum) relaxation mechanisms (electron-impurity and electron-phonon scattering) dramatically alters the resulting spin dynamics. We use each interaction explicitly to investigate how, in the presence of others, each relaxation source behaves. We use GaAs and GaN for zinc-blend structure, and GaN and AlN for the wurtzite structure.

  9. FREQUENCY DEFORMITY SCOLIOSIS AND FLAT FEET IN PUPILS III, V.VII GRADE SCHOOL

    Directory of Open Access Journals (Sweden)

    Dejаn Gojković

    2013-07-01

    Full Text Available Scoliosis is a lateral deviation of the spine or the angular deviation of the normal position of one or more segmenata.Funkcional curve can be fully corrected until the internal structural scoliosis are bone disorders, muscle nerve elements that support the spine, and complete correction is impossible. Static role is reflected in the foot taking kisses body weight through the bones pop and transmission and distribution of weight on the main point of support of the foot and therefore subject to various changes in the normal foot status.Dinamic role is reflected in walking, running and jumping in different forms. Because of this, the percentage of foot disorders is particularly large in the form of lowering the testing we arche.Perform o.š.Pale Pale deformities in scoliosis and flat feet in students III, V, VII grade. Our aim was to verify the extent to which physical education classes take appropriate measures in the detection and removal of poor posture and physical deformities. For testing we used: clinical method for scoliosis, a method for flat feet -Thomson method.

  10. Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

    International Nuclear Information System (INIS)

    Glas, F; Patriarche, G; Harmand, J C

    2010-01-01

    We review and illustrate the impact of TEM on the study of nanowires of non-nitride III-V semiconductors, with particular emphasis on the understanding of the thermodynamics and kinetics of their formation assisted by nano-sized catalyst particles. Besides providing basic information about the morphology of the nanowires and their growth rate as a function of diameter, TEM offers insights into the peculiar crystalline structure that they adopt. We discuss the formation of the unusual wurtzite hexagonal crystalline phase and that of planar stacking defects in these nanowires and show that they are kinetically controlled. We also demonstrate the transformation of wurtzite into cubic sphalerite upon epitaxial burying of the nanowires. Nanowires are particularly interesting in that they allow the fabrication of precisely positioned quantum dots with well-defined geometries. In this respect, we discuss the formation of strained quantum-size inclusions in nanowires, their critical dimensions and the kinetic and thermodynamic factors governing the changes of the crystalline structure that sometimes occur around a hetero-interface.

  11. Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks

    International Nuclear Information System (INIS)

    Coelho, J; Patriarche, G; Glas, F; Saint-Girons, G; Sagnes, I

    2004-01-01

    We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temperatures. For both samples, the ordering is induced by the stress field of a periodic dislocation network (DN) shallowly buried and parallel to the surface. This DN is a grain boundary (GB) that forms, between a thin GaAs layer (on which growth was performed) and a GaAs substrate joined together by wafer bonding, in order to accommodate a tilt and a twist between these two crystals; both these misorientations are imposed in a controlled manner. This GB is composed of a one-dimensional network of mixed dislocations and of a one-dimensional network of screw dislocations. For both samples, the nanostructures observed by transmission electron microscopy (TEM) and atomic force microscopy are ordered by the underlying DN observed by TEM since they have same dimensions and orientations as the cells of the DN

  12. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Philip M., E-mail: philip.campbell@gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States); Tarasov, Alexey; Joiner, Corey A.; Vogel, Eric M. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Ready, W. Jud [Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States)

    2016-01-14

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  13. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    Science.gov (United States)

    Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Ready, W. Jud; Vogel, Eric M.

    2016-01-01

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  14. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Passmann, Regina

    2008-08-15

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  15. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Veer Dhaka

    2016-01-01

    Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  16. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

    2016-01-15

    Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  17. Progress in the development of metamorphic multi-junction III-V space solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sinharoy, S.; Patton, M.O.; Valko, T.M.; Weizer, V.G. [Essential Research Inc., Cleveland, OH (United States)

    2002-07-01

    Theoretical calculations have shown that highest-efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single-junction 1.1 and 1.2 eV InGaAs solar cells, interest has grown in the development of multi-junction cells of this type, using graded buffer layer technology. Essential Research Incorporated (ERI) is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AMO), one-sun efficiency of 27%, and 100-sun efficiency of 31.1%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort involves the development of a 2.1 eV A1GaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AMO efficiency 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. For the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper. (author)

  18. A III-V nanowire channel on silicon for high-performance vertical transistors.

    Science.gov (United States)

    Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

    2012-08-09

    Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

  19. Phenomenological survey on the potential profile evolution in III-V binary compounds

    Directory of Open Access Journals (Sweden)

    Alejandro Mendoza Álvarez

    2011-01-01

    Full Text Available En este artículo se presenta el cambio en el perfil de eficacia potencial de algunos compuestos cuando el bandmixing de huecos ligeros y pesados se altera. Se obtuvieron mediante la aplicación de este teorema generalizado Shur a un problema de valores propios cuadrática obtenidos a partir de un sistema con N ecuaciones de segundo orden, junto en el contexto de la aproximación de masa efectiva multibanda. Se consideraron los valores de energía incidente que fue menor, igual y superior a la altura de la barrera de dispersión potencial de diferentes compuestos de semiconductores III-V binario. La mayoría de las propiedades estándar de los compuestos binarios en este estudio están garantizados, pero no todos los materiales que elegimos, han puesto de manifiesto la evolución que se espera en su perfil de potencial efectivo: algunos de los que constituyen los pozos cuánticos (QW en aplicaciones tecnológicas sólo convertirse en efectiva barrera (B las conductas de los agujeros de luz (LH cuando están en la energía incidente diferente (E se extiende y bandmixing diferentes presentes. Ninguno de los compuestos que constituyen barreras para las aplicaciones tecnológicas en este estudio se convierte en eficaz comportamientos QW válido tanto para la LH y HH. Sorprendentemente, todos los compuestos en este estudio que constituyen barreras estándar en las aplicaciones tecnológicas, las transiciones presente desde CS a B para la LH en el rango donde el valor de E es mayor que la altura de la barrera.

  20. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    International Nuclear Information System (INIS)

    Passmann, Regina

    2008-01-01

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  1. Radial Growth of Self-Catalyzed GaAs Nanowires and the Evolution of the Liquid Ga-Droplet Studied by Time-Resolved in Situ X-ray Diffraction.

    Science.gov (United States)

    Schroth, Philipp; Jakob, Julian; Feigl, Ludwig; Mostafavi Kashani, Seyed Mohammad; Vogel, Jonas; Strempfer, Jörg; Keller, Thomas F; Pietsch, Ullrich; Baumbach, Tilo

    2018-01-10

    We report on a growth study of self-catalyzed GaAs nanowires based on time-resolved in situ X-ray structure characterization during molecular-beam-epitaxy in combination with ex situ scanning-electron-microscopy. We reveal the evolution of nanowire radius and polytypism and distinguish radial growth processes responsible for tapering and side-wall growth. We interpret our results using a model for diameter self-stabilization processes during growth of self-catalyzed GaAs nanowires including the shape of the liquid Ga-droplet and its evolution during growth.

  2. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    International Nuclear Information System (INIS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-01-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  3. Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology

    Science.gov (United States)

    García-Tabarés, Elisa; Martín, Diego; García, Iván; Lelièvre, Jean François; Rey-Stolle, Ignacio

    2012-10-01

    Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

  4. Silicon, germanium, and III-V-based tunneling devices for low-power applications

    Science.gov (United States)

    Smith, Joshua T.

    While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

  5. III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kunert, B.; Guo, W.; Mols, Y.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K. [imec, Kapeldreef 75, 3001 Heverlee (Belgium); Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D. [Photonics Research Group, Ghent University, Technologiepark-Zwijnaarde 15, 9052 Gent (Belgium)

    2016-08-29

    We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

  6. Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.

    Science.gov (United States)

    Ben Bakir, B; Descos, A; Olivier, N; Bordel, D; Grosse, P; Augendre, E; Fulbert, L; Fedeli, J M

    2011-05-23

    We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.

  7. Surface characterization of III-V MOCVD films from heterocyclic single-source precursors; Oberflaechencharakterisierung von III-V MOCVD-Filmen aus heterozyklischen Single Source Precursoren

    Energy Technology Data Exchange (ETDEWEB)

    Seemayer, Andreas

    2009-07-13

    In the present thesis the sublimation and evaporation properties of heterocyclic gallium and antimony containing single-source precursors as well as the chemical composition and morphology of the films fabricated from this were studied. The single-source precursors available by a new synthesis route were characterized concerning their evaporation properties and the obtained films studied surface-physically. By this way the process parameters were optimized and the applicability of the single-source precursors in HV-MOCVD processes studied. By evaporation experiments in the UHV it could be shown that thereby lighter ligands like ethyl- and methyl-groups lead to a lower contamination of the reaction space with carbon containing molecules. Furthermore it was expected that the 6-rings synthetized with short ligands exhibit a high stability. This however could not be confirmed. By unwanted parasitary reactions in the gaseous phase respectively dissociative sublimation in the gaseous phase a deposition of GaSb with these precursors was not possible. The 4-ring stabilized with tertiary-butyl and ethyl-groups caused in the evaporation the largest contamination of the gaseous phase, becauselonger-chain hydrocarbons exhibil only a bad pump cross section. By parasitary reactions originating elementary antimony is detectable in the gaseous phase. The films were studied concerning their chemical composition and their transport- respectively storage-conditioned surface contamination. Furthermore it has become clear that not only a purely synthetized precursor substance but also the reactor design is deciding for a successful deposition and a high film quality. First by successive optimization of the evaporation geometry it was possible to reduce the roughness of the produced GaSb films down to about 10 nm-30 nm.

  8. Self-Catalyzing Chemiluminescence of Luminol-Diazonium Ion and Its Application for Catalyst-Free Hydrogen Peroxide Detection and Rat Arthritis Imaging.

    Science.gov (United States)

    Zhao, Chunxin; Cui, Hongbo; Duan, Jing; Zhang, Shenghai; Lv, Jiagen

    2018-02-06

    We report the unique self-catalyzing chemiluminescence (CL) of luminol-diazonium ion (N 2 + -luminol) and its analytical potential. Visual CL emission was initially observed when N 2 + -luminol was subjected to alkaline aqueous H 2 O 2 without the aid of any catalysts. Further experimental investigations found peroxidase-like activity of N 2 + -luminol on the cleavage of H 2 O 2 into OH • radical. Together with other experimental evidence, the CL mechanism is suggested as the activation of N 2 + -luminol and its dediazotization product 3-hydroxyl luminol by OH • radical into corresponding intermediate radicals, and then further oxidation to excited-state 3-N 2 + -phthalic acid and 3-hydroxyphthalic acid, which finally produce 415 nm CL. The self-catalyzing CL of N 2 + -luminol provides us an opportunity to achieve the attractive catalyst-free CL detection of H 2 O 2 . Experiments demonstrated the 10 -8 M level detection sensitivity to H 2 O 2 as well as to glucose or uric acid if presubjected to glucose oxidase or uricase. With the exampled determination of serum glucose and uric acid, N 2 + -luminol shows its analytical potential for other analytes linking the production or consumption of H 2 O 2 . Under physiological condition, N 2 + -luminol exhibits highly selective and sensitive CL toward 1 O 2 among the common reactive oxygen species. This capacity supports the significant application of N 2 + -luminol for detecting 1 O 2 in live animals. By imaging the arthritis in LEW rats, N 2 + -luminol CL is demonstrated as a potential tool for mapping the inflammation-relevant biological events in a live body.

  9. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors

    Directory of Open Access Journals (Sweden)

    Sipahi Guilherme

    2011-01-01

    Full Text Available Abstract The electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.3Ga0.7N thin superlattices (SLs. The calculations are done within a self-consistent approach to the k → ⋅ p → theory by means of a full six-band Luttinger-Kohn Hamiltonian, together with the Poisson equation in a plane wave representation, including exchange correlation effects within the local density approximation. It was also assumed that transport in the SL occurs through extended minibands states for each carrier, and the conductivity is calculated at zero temperature and in low-field ohmic limits by the quasi-chemical Boltzmann kinetic equation. It was shown that the particular minibands structure of the p-doped SLs leads to a plateau-like behavior in the conductivity as a function of the donor concentration and/or the Fermi level energy. In addition, it is shown that the Coulomb and exchange-correlation effects play an important role in these systems, since they determine the bending potential.

  10. III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

    Science.gov (United States)

    Huang, Cheng-Ying

    As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing

  11. Improved Electron Yield and Spin-Polarization from III-V Photocathodes via Bias Enhanced Carrier Drift: Final Report

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.

    2006-01-01

    In this DOE STTR program, Saxet Surface Science, with the Stanford Linear Accelerator Center as partner, designed, built and tested photocathode structures such that optimal drift-enhanced spin-polarization from GaAs based photoemitters was achieved with minimal bias supply requirements. The forward bias surface grid composition was optimized for maximum polarization and yield, together with other construction parameters including doping profile. This program has culminated in a cathode bias structure affording increased electron spin polarization when applied to III-V based photocathodes. The optimized bias structure has been incorporated into a cathode mounting and biasing design for use in a polarized electron gun.

  12. Factors affecting stress distribution and displacements in crystals III-V grown by Czochralski method with liquid encapsulation

    International Nuclear Information System (INIS)

    Schvezov, C.E.; Samarasekera, I.; Weinberg, F.

    1988-01-01

    A mathematical model based on the finite element method for calculating temperature and shear stress distributions in III-V crystals grown by LEC technique was developed. The calculated temperature are in good agreements with the experimental measurements. The shear stress distribution was calculated for several environmental conditions. The results showed that the magnitude and the distribution of shear stresses are highly sensitive to the crystal environment, including thickness and temperature distribution in boron oxides and the gas. The shear stress is also strongly influenced by interface curvature and cystals radius. (author) [pt

  13. 30 CFR 57.22202 - Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Main fans (I-A, I-B, I-C, II-A, III, V-A, and V... Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). (a) Main fans shall be— (1) Installed on the... mines, provided with an automatic signal device to give an alarm when the fan stops. The signal device...

  14. Preservation of water samples for arsenic(III/V) determinations: An evaluation of the literature and new analytical results

    Science.gov (United States)

    McCleskey, R. Blaine; Nordstrom, D. Kirk; Maest, A.S.

    2004-01-01

    Published literature on preservation procedures for stabilizing aqueous inorganic As(III/V) redox species contains discrepancies. This study critically evaluates published reports on As redox preservation and explains discrepancies in the literature. Synthetic laboratory preservation experiments and time stability experiments were conducted for natural water samples from several field sites. Any field collection procedure that filters out microorganisms, adds a reagent that prevents dissolved Fe and Mn oxidation and precipitation, and isolates the sample from solar radiation will preserve the As(III/V) ratio. Reagents that prevent Fe and Mn oxidation and precipitation include HCl, H 2SO4, and EDTA, although extremely high concentrations of EDTA are necessary for some water samples high in Fe. Photo-catalyzed Fe(III) reduction causes As(III) oxidation; however, storing the sample in the dark prevents photochemical reactions. Furthermore, the presence of Fe(II) or SO 4 inhibits the oxidation of As(III) by Fe(III) because of complexation reactions and competing reactions with free radicals. Consequently, fast abiotic As(III) oxidation reactions observed in the laboratory are not observed in natural water samples for one or more of the following reasons: (1) the As redox species have already stabilized, (2) most natural waters contain very low dissolved Fe(III) concentrations, (3) the As(III) oxidation caused by Fe(III) photoreduction is inhibited by Fe(II) or SO4.

  15. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    Directory of Open Access Journals (Sweden)

    N. Daix

    2014-08-01

    Full Text Available We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs active layer is equal to 3.5 × 109 cm−2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

  16. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    Energy Technology Data Exchange (ETDEWEB)

    Daix, N., E-mail: dai@zurich.ibm.com; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Fompeyrine, J. [IBM Research - Zürich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Hartmann, J. M. [CEA, LETI 17, rue des Martyrs, F-38054 Grenoble (France); Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D. [IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Route 134 Yorktown Heights, New York 10598 (United States)

    2014-08-01

    We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In{sub 0.53}Ga{sub 0.47}As (InGaAs) active layer is equal to 3.5 × 10{sup 9} cm{sup −2}, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm{sup 2}/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm{sup 2}/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

  17. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    Science.gov (United States)

    Daix, N.; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.; Fompeyrine, J.

    2014-08-01

    We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active layer is equal to 3.5 × 109 cm-2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000-3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

  18. Preservation of water samples for arsenic(III/V) determinations: an evaluation of the literature and new analytical results

    International Nuclear Information System (INIS)

    McCleskey, R.Blaine; Nordstrom, D.Kirk; Maest, Ann S.

    2004-01-01

    Published literature on preservation procedures for stabilizing aqueous inorganic As(III/V) redox species contains discrepancies. This study critically evaluates published reports on As redox preservation and explains discrepancies in the literature. Synthetic laboratory preservation experiments and time stability experiments were conducted for natural water samples from several field sites. Any field collection procedure that filters out microorganisms, adds a reagent that prevents dissolved Fe and Mn oxidation and precipitation, and isolates the sample from solar radiation will preserve the As(III/V) ratio. Reagents that prevent Fe and Mn oxidation and precipitation include HCl, H 2 SO 4 , and EDTA, although extremely high concentrations of EDTA are necessary for some water samples high in Fe. Photo-catalyzed Fe(III) reduction causes As(III) oxidation; however, storing the sample in the dark prevents photochemical reactions. Furthermore, the presence of Fe(II) or SO 4 inhibits the oxidation of As(III) by Fe(III) because of complexation reactions and competing reactions with free radicals. Consequently, fast abiotic As(III) oxidation reactions observed in the laboratory are not observed in natural water samples for one or more of the following reasons: (1) the As redox species have already stabilized, (2) most natural waters contain very low dissolved Fe(III) concentrations, (3) the As(III) oxidation caused by Fe(III) photoreduction is inhibited by Fe(II) or SO 4

  19. Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

    Science.gov (United States)

    Nagaiah, Padmaja

    As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p

  20. Deviations from Vegard’s law in ternary III-V alloys

    KAUST Repository

    Murphy, S. T.; Chroneos, Alexander; Grimes, R. W.; Jiang, C.; Schwingenschlö gl, Udo

    2010-01-01

    the linear relationship would predict. Here we use special quasirandom structures and density functional theory to investigate such deviations for MxN1−xAs ternary alloys, where M and N are group III species (B, Al, Ga, and In). Our simulations predict a

  1. Photon confinement in high-efficiency, thin-film III-V solar cells obtained by epitaxial lift-off

    International Nuclear Information System (INIS)

    Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Deelen, J. van; Niftrik, A.T.J. van; Larsen, P.K.

    2006-01-01

    Using the epitaxial lift-off (ELO) technique, a III-V device structure can be separated from its GaAs substrate by selective wet etching of a thin release layer. The thin-film structures obtained by the ELO process can be cemented or van der Waals bonded on arbitrary smooth surface carriers for further processing. It is shown that the ELO method, initially able to separate millimetre-sized GaAs layers with a lateral etch rate of about 1 mm/h, has been developed to a process capable to free the entire 2-in. epitaxial structures from their substrates with etch rates up to 30 mm/h. With these characteristics the method has a large potential for the production of high efficiency thin-film solar cells. By choosing the right deposition and ELO strategy, the thin-film III-V cells can be adequately processed on both sides allowing for an entire range of new cell structures. In the present work, the performance of semi-transparent bifacial solar cells, produced by the deposition of metal grid contacts on both sides, was evaluated. Reflection of light at the rear side of the bifacial GaAs solar cells was found to result in an enhanced collection probability of the photon-induced carriers compared to that of regular III-V cells on a GaAs substrate. To enhance this effect, thin-film GaAs cells with gold mirror back contacts were prepared. Even in their present premature stage of development, these single-junction thin-film cells reached a record efficiency of 24.5% which is already very close to the 24.9% efficiency that was obtained with a regular GaAs cell on a GaAs substrate. From this it could be concluded that, as a result of the photon confinement, ELO cells require a significantly thinner base layer than regular GaAs cells while at the same time they have the potential to reach a higher efficiency

  2. Deviations from Vegard’s law in ternary III-V alloys

    KAUST Repository

    Murphy, S. T.

    2010-08-03

    Vegard’s law states that, at a constant temperature, the volume of an alloy can be determined from a linear interpolation of its constituent’s volumes. Deviations from this description occur such that volumes are both greater and smaller than the linear relationship would predict. Here we use special quasirandom structures and density functional theory to investigate such deviations for MxN1−xAs ternary alloys, where M and N are group III species (B, Al, Ga, and In). Our simulations predict a tendency, with the exception of AlxGa1−xAs, for the volume of the ternary alloys to be smaller than that determined from the linear interpolation of the volumes of the MAs and BAs binary alloys. Importantly, we establish a simple relationship linking the relative size of the group III atoms in the alloy and the predicted magnitude of the deviation from Vegard’s law.

  3. Theory of Anion-Substituted Nitrogen-Bearing III-V Alloys

    Science.gov (United States)

    1998-07-20

    was found by Zunger group). When more than 4% arsenic is incorporated into GaN in an ordered array, the band gap closes . Calculations of the...arsenic is incorporated into GaN in an ordered array, the band gap closes . Calculations of the properties of random alloys predict smaller bowing...BEARING lll-V ALLOYS Prepared by: M. A. Berding, Senior Research Physicist M. van Schilfgaarde, Senior Research Physicist A. Sher, Associate Director

  4. Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

    International Nuclear Information System (INIS)

    Chao, K.; Zhang, Z.; Ebert, P.; Shih, C.K.

    1999-01-01

    Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism. copyright 1999 The American Physical Society

  5. The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

    Directory of Open Access Journals (Sweden)

    Florent Ravaux

    2017-06-01

    Full Text Available To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM structures of molybdenum (Mo were fabricated on indium phosphide (InP substrate on the top of an indium gallium arsenide (InGaAs layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS showed that the amount of oxides (InxOy, GaxOy or AsxOy was significantly decreased for the etched samples. These results suggest that the low contact resistance obtained after digital etching is attributed to the combined effects of the induced surface roughness and oxides removal during the digital etch process.

  6. Broadband microwave photonic fully tunable filter using a single heterogeneously integrated III-V/SOI-microdisk-based phase shifter.

    Science.gov (United States)

    Lloret, Juan; Morthier, Geert; Ramos, Francisco; Sales, Salvador; Van Thourhout, Dries; Spuesens, Thijs; Olivier, Nicolas; Fédéli, Jean-Marc; Capmany, José

    2012-05-07

    A broadband microwave photonic phase shifter based on a single III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic silicon-on-insulator waveguide is reported. The phase shift tunability is accomplished by modifying the effective index through carrier injection. A comprehensive semi-analytical model aiming at predicting its behavior is formulated and confirmed by measurements. Quasi-linear and continuously tunable 2π phase shifts at radiofrequencies greater than 18 GHz are experimentally demonstrated. The phase shifter performance is also evaluated when used as a key element in tunable filtering schemes. Distortion-free and wideband filtering responses with a tuning range of ~100% over the free spectral range are obtained.

  7. Pesan Sosial dalam Foto Jurnalistik (Analisis Semiotika dalam Buku ‘Jakarta Estetika Banal’, Bab I, III, V, dan VII

    Directory of Open Access Journals (Sweden)

    Jaka Priyo Nuswantara

    2014-01-01

    Full Text Available This study aims to determine the meaning of denotation and connotation, and social message in the book 'Aesthetics Jakarta Banal', Chapter I, III, V, and VII. The author uses the theory Semiotics of Roland Barthes. Where Semiotics of Roland Barthes uses two stages of analysis denotation and connotation. The research method used is a Roland Barthes semiotic analysis method on the basis that this study analyzes the messages conveyed in the book 'Aesthetics Jakarta Banal', which gives an explanation and overview of issues related to the formulation. Inferred outline text analysis results indicate that the social life of silence in the city with the concept of light to be seen. Of all the images examined, the object edges and political society into something dominant to be something that should be understood by the reader.

  8. Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

    International Nuclear Information System (INIS)

    Zhao, W.; Steidl, M.; Paszuk, A.; Brückner, S.; Dobrich, A.; Supplie, O.; Kleinschmidt, P.; Hannappel, T.

    2017-01-01

    Highlights: • We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H_2. • UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied. • After processing the Si(111) surface is free of contamination and atomically flat. • The surface exhibits a (1 × 1) reconstruction and monohydride termination. • Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. - Abstract: For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H_2-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H_2 ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

  9. Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, W.; Steidl, M.; Paszuk, A. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Brückner, S. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany); Dobrich, A. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Supplie, O. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany); Kleinschmidt, P. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Hannappel, T., E-mail: thomas.hannappel@tu-ilmenau.de [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany)

    2017-01-15

    Highlights: • We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H{sub 2}. • UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied. • After processing the Si(111) surface is free of contamination and atomically flat. • The surface exhibits a (1 × 1) reconstruction and monohydride termination. • Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. - Abstract: For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H{sub 2}-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H{sub 2} ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

  10. Intensity of adjuvant chemotherapy regimens and grade III-V toxicities among elderly stage III colon cancer patients.

    Science.gov (United States)

    van Erning, F N; Razenberg, L G E M; Lemmens, V E P P; Creemers, G J; Pruijt, J F M; Maas, H A A M; Janssen-Heijnen, M L G

    2016-07-01

    The aim of this study was to provide insight in the use, intensity and toxicity of therapy with capecitabine and oxaliplatin (CAPOX) and capecitabine monotherapy (CapMono) among elderly stage III colon cancer patients treated in everyday clinical practice. Data from the Netherlands Cancer Registry were used. All stage III colon cancer patients aged ≥70 years diagnosed in the southeastern part between 2005 and 2012 and treated with CAPOX or CapMono were included. Differences in completion of all planned cycles, cumulative dosages and toxicity between both regimens were evaluated. One hundred ninety-three patients received CAPOX and 164 patients received CapMono; 33% (n = 63) of the patients receiving CAPOX completed all planned cycles of both agents, whereas 55% (n = 90) of the patients receiving CapMono completed all planned cycles (P characteristics, CapMono was associated with a lower odds of developing grade III-V toxicity than CAPOX (odds ratio 0.54, 95% confidence interval 0.33-0.89). For patients treated with CAPOX, the most common toxicities were gastrointestinal (29%), haematological (14%), neurological (11%) and other toxicity (13%). For patients treated with CapMono, dermatological (17%), gastrointestinal (13%) and other toxicity (11%) were the most common. CAPOX is associated with significantly more grade III-V toxicities than CapMono, which had a pronounced impact on the cumulative dosage received and completion of all planned cycles. In this light, CapMono seems preferable over CAPOX. Copyright © 2016 Elsevier Ltd. All rights reserved.

  11. III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Klein, Talysa R.; Jain, Nikhil; Essig, Stephanie; Schulte-Huxel, Henning; Warren, Emily; van Hest, Maikel F. A. M.; Geisz, John; Stradins, Paul; Tamboli, Adele; Rienacker, Michael; Merkle, Agnes; Schmidt, Jan; Brendel, Rolf; Peibst, Robby

    2017-07-11

    Solar cells made from bulk crystalline silicon (c-Si) dominate the market, but laboratory efficiencies have stagnated because the current record efficiency of 26.3% is already very close to the theoretical limit of 29.4% for a single-junction c-Si cell. In order to substantially boost the efficiency of Si solar cells we have been developing stacked III-V/Si tandem cells, recently attaining efficiencies above 32% in four-terminal configuration. In this contribution, we use state-of-the-art III-V cells coupled with equivalent circuit simulations to compare four-terminal (4T) to three- and two-terminal (3T, 2T) operation. Equivalent circuit simulations are used to show that tandem cells can be operated just as efficiently using three terminals as with four terminals. However, care must be taken not to overestimate 3T efficiency, as the two circuits used to extract current interact, and a method is described to accurately determine this efficiency. Experimentally, a 4T GaInP/Si tandem cell utilizing an interdigitated back contact cell is shown, exhibiting a 4T efficiency of 31.5% and a 2T efficiency of 28.1%. In 3T configuration, it is used to verify the finding from simulation that 3T efficiency is overestimated when interactions between the two circuits are neglected. Considering these, a 3T efficiency approaching the 4T efficiency is found, showing that 3T operation is efficient, and an outlook on fully integrated high-efficiency 3T and 2T tandem cells is given.

  12. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

    Science.gov (United States)

    Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

    2012-08-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

  13. High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Xianshu eLuo

    2015-04-01

    Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

  14. Study of the transport phenomena in III-V materials by the Monte Carlo method: application to INAS

    International Nuclear Information System (INIS)

    Bouazza, B.; Amer, L.; Guen-Bouazza, A.; Sayeh, C.; Chabanne-Sari, N.E.; Gontrand, C.

    2004-01-01

    Full text.The microelectronic comprehension of the phenomena which describes the behavior of the carriers in semiconductor materials requires the knowledge of energy distribution function. This distribution function is obtained by the resolution of Boltzmann equation which is very hard to solve analytically. Other methods based on modeling are actually successfully used to solve this equation. This Monte Carlo method is among of the most methods used for studying electronics components operations. It consists to follow the evolution of electron packets in real space, where each electron subjected to the electric field present in material goes interact with the crystal lattice. It is therefore an iterative process made up from a whole coasting flights stopped by acoustics interactions, polar and non polar optics, piezoelectric, inter-valley, impurity, ionization and surface. By applying this method to the III-V material: InAs. We can describe the behavior of the carriers from dynamic and energetic point of view (variation speed according to the field). The simulation is applied, taking into account variation of the carriers according to time in the non stationary mode, and the effect of temperature, and measurements doping. Results obtained are shown to be comparable to those of the theory

  15. Proteomic and metabolomic biomarkers for III-V semiconductors: And prospects for application to nano-materials

    International Nuclear Information System (INIS)

    Fowler, Bruce A.; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2008-01-01

    There has been an increased appreciation over the last 20 years that chemical agents at very low dose levels can produce biological responses in protein expression patterns (proteomic responses) or alterations in sensitive metabolic pathways (metabolomic responses). Marked improvements in analytical methodologies, such as 2-D gel electrophoresis, matrix-assisted laser desorption-time of flight (MALDI-TOF) and surface enhanced laser desorption-time of flight (SELDI-TOF) technologies are capable of identifying specific protein patterns related to exposure to chemicals either alone or as mixtures. The detection and interpretation of early cellular responses to chemical agents have also made great advances through correlative ultrastructural morphometric and biochemical studies. Similarly, advances in analytical technologies such as HPLC, proton NMR, MALDI-TOF, and SELDI-TOF have permitted early detection of changes in a number of essential metabolic pathways following chemical exposures by measurement of alterations in metabolic products from those pathways. Data from these approaches are increasingly regarded as potentially useful biomarkers of chemical exposure and early cellular responses. Validation and establishment of linkages to biological outcomes are needed in order for biomarkers of effect to be established. This short review will cover a number of the above techniques and report data from chemical exposures to two binary III-V semiconductor compounds to illustrate gender differences in proteomic responses. In addition, the use of these methodologies in relation to rapid safety evaluations of nanotechnology products will be discussed. (Supported in part by NIH R01-ES4879)

  16. Two Dimensional Effective Electron Mass at the Fermi Level in Quantum Wells of III-V, Ternary and Quaternary Semiconductors.

    Science.gov (United States)

    Chakrabarti, S; Chatterjee, B; Debbarma, S; Ghatak, K P

    2015-09-01

    In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology.

  17. Atomic scale images of acceptors in III-V semiconductors. Band bending, tunneling paths and wave functions

    Energy Technology Data Exchange (ETDEWEB)

    Loth, S.

    2007-10-26

    This thesis reports measurements of single dopant atoms in III-V semiconductors with low temperature Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS). It investigates the anisotropic spatial distribution of acceptor induced tunneling processes at the {l_brace}110{r_brace} cleavage planes. Two different tunneling processes are identified: conventional imaging of the squared acceptor wave function and resonant tunneling at the charged acceptor. A thorough analysis of the tip induced space charge layers identifies characteristic bias windows for each tunnel process. The symmetry of the host crystal's band structure determines the spatial distribution of the tunneling paths for both processes. Symmetry reducing effects at the surface are responsible for a pronounced asymmetry of the acceptor contrasts along the principal [001] axis. Uniaxial strain fields due to surface relaxation and spin orbit interaction of the tip induced electric field are discussed on the basis of band structure calculations. High-resolution STS studies of acceptor atoms in an operating p-i-n diode confirm that an electric field indeed changes the acceptor contrasts. In conclusion, the anisotropic contrasts of acceptors are created by the host crystal's band structure and concomitant symmetry reduction effects at the surface. (orig.)

  18. Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures.

    Science.gov (United States)

    Ng, Wing H; Lu, Yao; Liu, Huiyun; Carmalt, Claire J; Parkin, Ivan P; Kenyon, Anthony J

    2018-02-23

    Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.

  19. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory.

    Science.gov (United States)

    El-Atwani, O; Norris, S A; Ludwig, K; Gonderman, S; Allain, J P

    2015-12-16

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  20. Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Walker, A. W., E-mail: alexandre.walker@ise.fraunhofer.de; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany)

    2016-04-21

    A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 10{sup 17 }cm{sup −3}) for an injected excess carrier concentration below 4 × 10{sup 12 }cm{sup −3}. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

  1. Error-free Dispersion-uncompensated Transmission at 20 Gb/s over SSMF using a Hybrid III-V/SOI DML with MRR Filtering

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Kamchevska, Valerija; Ding, Yunhong

    2016-01-01

    Error-free 20-Gb/s directly-modulated transmission is achieved by enhancing the dispersion tolerance of a III-V/SOI DFB laser with a silicon micro-ring resonator. Low (∼0.4 dB) penalty compared to back-to-back without ring is demonstrated after 5-km SSMF....

  2. Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

    Science.gov (United States)

    Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

    2017-06-26

    A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

  3. Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy

    Science.gov (United States)

    Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    A simple analysis is provided to determine the characteristics of an electron cyclotron resonance (ECR) plasma source for the generation of active nitrogen species in the molecular beam epitaxy of III-V nitrides. The effects of reactor geometry, pressure, power, and flow rate on the dissociation efficiency and ion flux are presented. Pulsing the input power is proposed to reduce the ion flux.

  4. Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH42S Treated III-V Semiconductors

    Directory of Open Access Journals (Sweden)

    Ming-Kwei Lee

    2012-01-01

    Full Text Available The electrical characteristics of TiO2 films grown on III-V semiconductors (e.g., p-type InP and GaAs by metal-organic chemical vapor deposition were studied. With (NH42S treatment, the electrical characteristics of MOS capacitors are improved due to the reduction of native oxides. The electrical characteristics can be further improved by the postmetallization annealing, which causes hydrogen atomic ion to passivate defects and the grain boundary of polycrystalline TiO2 films. For postmetallization annealed TiO2 on (NH42S treated InP MOS, the leakage current densities can reach 2.7 × 10−7 and 2.3 × 10−7 A/cm2 at ±1 MV/cm, respectively. The dielectric constant and effective oxide charges are 46 and 1.96 × 1012 C/cm2, respectively. The interface state density is 7.13×1011 cm−2 eV−1 at the energy of 0.67 eV from the edge of valence band. For postmetallization annealed TiO2 on (NH42S treated GaAs MOS, The leakage current densities can reach 9.7×10−8 and 1.4×10−7 at ±1 MV/cm, respectively. The dielectric constant and effective oxide charges are 66 and 1.86×1012 C/cm2, respectively. The interface state density is 5.96×1011 cm−2 eV−1 at the energy of 0.7 eV from the edge of valence band.

  5. Influence of light waves on the thermoelectric power under large magnetic field in III-V, ternary and quaternary materials

    Energy Technology Data Exchange (ETDEWEB)

    Ghatak, K.P. [Department of Electronic Science, The University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Bhattacharya, S. [Post Graduate Department of Computer Science, St. Xavier' s College, 30 Park Street, Kolkata 700 016 (India); Pahari, S. [Department of Administration, Jadavpur University, Kolkata 700 032 (India); De, D. [Department of Computer Science and Engineering, West Bengal University of Technology, B. F. 142, Sector I, Salt Lake, Kolkata 700 064 (India); Ghosh, S.; Mitra, M. [Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University, Howrah 711 103 (India)

    2008-04-15

    We study theoretically the influence of light waves on the thermoelectric power under large magnetic field (TPM) for III-V, ternary and quaternary materials, whose unperturbed energy-band structures, are defined by the three-band model of Kane. The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings in the presence of external photoexcitation. It has been found by taking n-InAs, n-InSb, n-Hg{sub 1-x}Cd{sub x}Te and n-In{sub 1-x}Ga{sub x}As{sub y}P{sub 1-y} lattice matched to InP as examples that the TPM decreases with increase in electron concentration, and increases with increase in intensity and wavelength, respectively in various manners. The strong dependence of the TPM on both light intensity and wavelength reflects the direct signature of light waves that is in direct contrast as compared with the corresponding bulk specimens of the said materials in the absence of external photoexcitation. The rate of change is totally band-structure dependent and is significantly influenced by the presence of the different energy-band constants. The well-known result for the TPM for nondegenerate wide-gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions and this compatibility is the indirect test of our generalized formalism. Besides, we have also suggested the experimental methods of determining the Einstein relation for the diffusivity:mobility ratio, the Debye screening length and the electronic contribution to the elastic constants for materials having arbitrary dispersion laws. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  6. Conformal, planarizing and bridging AZ5214-E layers deposited by a 'draping' technique on non-planar III V substrates

    Science.gov (United States)

    Eliás, P.; Strichovanec, P.; Kostic, I.; Novák, J.

    2006-12-01

    A draping technique was tested for the deposition of positive-tone AZ5214-E photo-resist layers on non-planar (1 0 0)-oriented III-V substrates, which had a variety of three-dimensional (3D) topographies micromachined in them that consisted, e.g., of mesa ridges confined to side facets with variable tilt, inverted pyramidal holes and stubs confined to perpendicular side facets. All objects were sharp-edged. In each draping experiment, an AZ5214-E sheet was (1) formed floating on the water surface, (2) lowered onto a non-planar substrate and (3) draped over it during drying to form either self-sustained, or conformal, or planarizing layers over the non-planar substrates. The draping process is based on the depression of the glass transition temperature Tg of AZ5214-E material induced by penetrant water molecules that interact with AZ5214-E. During the process, the molecules are initially trapped under an AZ5214-E sheet and then transported out through the sheet via permeation. The water-AZ5214-E interaction modifies the stiffness κ of the sheet. The magnitude of the effect depends on temperature T and on partial water vapour pressure difference p(T, P, κ): the net effect is that Tg = f(C(T, P), p(T, P, κ)) is lowered as the concentration C of water increases with T and p, where P is the permeability of the sheet. The interaction depressed the Tg of the sheets as low as or lower than 53 °C for 6 µm thick sheets. At room temperature T Tg, the sheet becomes rubbery and mouldable by adhesion and capillary forces. As a result, it can either contour or planarize the topography depending on its geometry and thickness of the sheet.

  7. III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

    Science.gov (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-08-04

    The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

  8. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

    Science.gov (United States)

    2015-08-27

    copyright information. 13. SUPPLEMENTARY NOTES. Enter information not included elsewhere such as: prepared in cooperation with; translation of; report...II-VI heterojunctions such as multi-color photodetectors and solar cells [2]. Mixing lattice-matched II-VI and III-V semiconductors could be an...at 77 K, further silicon oxide surface passivation can be done to suppress the surface leakage [10] in the future work. Figure 10 The dark I-V

  9. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory

    Science.gov (United States)

    Bastos, Carlos M. O.; Sabino, Fernando P.; Sipahi, Guilherme M.; Da Silva, Juarez L. F.

    2018-02-01

    Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on an equal footing, is due to the unphysical self-interaction problem that mainly affects the band gap and spin-orbit splitting (SOC) in semiconductors and, in particular, III-V systems with similar magnitude of the band gap and SOC. In this work, we report a consistent study of the structural and electronic properties of the III-V semiconductors by using the screening hybrid-density functional theory framework, by fitting the α parameters for 12 different III-V compounds, namely, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, and InSb, to minimize the deviation between the theoretical and experimental values of the band gap and SOC. Structural relaxation effects were also included. Except for AlP, whose α = 0.127, we obtained α values that ranged from 0.209 to 0.343, which deviate by less than 0.1 from the universal value of 0.25. Our results for the lattice parameter and elastic constants indicate that the fitting of α does not affect those structural parameters when compared with the HSE06 functional, where α = 0.25. Our analysis of the band structure based on the k ṡ p method shows that the effective masses are in agreement with the experimental values, which can be attributed to the simultaneous fitting of the band gap and SOC. Also, we estimate the values of g-factors, extracted directly from the band structure, which are close to experimental results, which indicate that the obtained band structure produced a realistic set of k ṡ p parameters.

  10. [Double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament at stage I for the treatment of acromioclavicular dislocation with Rockwood type III - V].

    Science.gov (United States)

    Hu, Wen-yue; Yu, Chong; Huang, Zhong-ming; Han, Lei

    2015-06-01

    To explore clinical efficacy of double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament in stage I in treating acromioclavicular dislocation with Rockwood type III - V . From January 2010 to September 2013, 56 patients with Rockwood type III - V acromioclavicular dislocation were treated by operation, including 20 males and 36 femlaes, aged from 32 to 52 years old with an average of 38.5 years old. Twenty-five patients were on the left side and 31 cases on the right side. The time from injury to operation was from 3 to 14 days, averaged 7 days. All patients were diagnosed as acromioclavicular dislocation with Rockwood type III - V, and double Endobutto were used to reconstituting coracoclavicular ligament, line metal anchors were applied for repairing acromioclavicular ligament. Postoperative complications were observed, Karlsson and Constant-Murley evaluation standard were used to evaluate clinical effects. All patients were followed up from 8 to 24 months with average of 11 months. According to Karlsson evaluation standard at 6 months after operation,42 cases were grade A, 13 were grade B and 1 was grade C. Constant-Murley score were improved from (42.80±5.43) before operation to (91.75±4.27) at 6 months after operation. All items at 6 months after operation were better than that of preoperative items. Forty-eight patients got excellent results, 7 were moderate and only 1 with bad result. No shoulder joint adhesion, screw loosening or breakage were occurred during following up. Double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament in stage I for the treatment of acromioclavicular dislocation with Rockwood type III - V could obtain early staisfied clinical effects, and benefit for early recovery of shoulder joint function.

  11. InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform.

    Science.gov (United States)

    Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru

    2018-02-19

    We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.

  12. Studies on the self-catalyzed Knoevenagel condensation, characterization, DPPH radical scavenging activity, cytotoxicity, and molecular properties of 5-arylidene-2,2-dimethyl-1,3-dioxane-4,6-diones using single crystal XRD and DFT techniques

    Science.gov (United States)

    Suresh Kumar, G. S.; Antony Muthu Prabhu, A.; Bhuvanesh, N.

    2014-10-01

    We have studied the self-catalyzed Knoevenagel condensation, spectral characterization, DPPH radical scavenging activity, cytotoxicity, and molecular properties of 5-arylidene-2,2-dimethyl-1,3-dioxane-4,6-diones using single crystal XRD and DFT techniques. In the absence of any catalyst, a series of novel 5-arylidene-2,2-dimethyl-1,3-dioxane-4,6-diones were synthesized using Meldrum’s acid and formylphenoxyaliphatic acid(s) in water. These molecules are arranged in the dimer form through intermolecular H-bonding in the single crystal XRD structure. Compounds have better DPPH radical scavenging activity and cytotoxicity against A431 cancer cell line. The optimized molecular structure, natural bond orbital analysis, electrostatic potential map, HOMO-LUMO energies, molecular properties, and atomic charges of these molecules have been studied by performing DFT/B3LYP/3-21G(*) level of theory in gas phase.

  13. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

    Directory of Open Access Journals (Sweden)

    Konstantinos Pantzas

    2015-10-01

    Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

  14. Diagnostic accuracy of circulating thyrotropin receptor messenger RNA combined with neck ultrasonography in patients with Bethesda III-V thyroid cytology.

    Science.gov (United States)

    Aliyev, Altay; Patel, Jinesh; Brainard, Jennifer; Gupta, Manjula; Nasr, Christian; Hatipoglu, Betul; Siperstein, Allan; Berber, Eren

    2016-01-01

    The aim of this study was to analyze the usefulness of thyrotropin receptor messenger RNA (TSHR-mRNA) combined with neck ultrasonography (US) in the management of thyroid nodules with Bethesda III-V cytology. Cytology slides of patients with a preoperative fine needle aspiration (FNA) and TSHR-mRNA who underwent thyroidectomy between 2002 and 2011 were recategorized based on the Bethesda classification. Results of thyroid FNA, TSHR-mRNA, and US were compared with the final pathology. Sensitivity, specificity, positive predictive value (PPV), and negative predictive value (NPV) were calculated. There were 12 patients with Bethesda III, 112 with Bethesda IV, and 58 with Bethesda V cytology. The sensitivity of TSHR-mRNA in predicting cancer was 33%, 65%, and 79 %, and specificity was 67%, 66%, and 71%, for Bethesda III, IV, and V categories, respectively. For the same categories, the PPV of TSHR-mRNA was 25%, 33%, and 79%, respectively; whereas the NPV was 75%, 88%, and 71%, respectively. The addition of neck US to TSHR-mRNA increased the NPV to 100% for Bethesda III, and 86%, for Bethesda IV, and 82% for Bethesda V disease. This study documents the potential usefulness of TSHR-mRNA for thyroid nodules with Bethesda III-V FNA categories. TSHR-mRNA may be used to exclude Bethesda IV disease. A large sample analysis is needed to determine its accuracy for Bethesda category III nodules. Copyright © 2016 Elsevier Inc. All rights reserved.

  15. A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

    Directory of Open Access Journals (Sweden)

    Katsuaki Tanabe

    2009-07-01

    Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

  16. Health Behaviors of Korean Gastric Cancer Survivors with Hypertension: A Propensity Analysis of KNHANES III-V (2005-2012.

    Directory of Open Access Journals (Sweden)

    So-Ra Jo

    Full Text Available This study provides a comparison of health behaviors between gastric cancer survivors with hypertension and non-cancer subjects in Korea.Data from the Korean National Health and Nutrition Examination Survey (KNHANES for the period of 2005-2012 were used in this study. A propensity score matching method was used to compare health behaviors. Before the matching of propensity scores, the number of participants was 11034 (102 gastric cancer survivors and 10932 non-cancer participants. A 1:5 propensity score matching procedure yielded a total of 480 participants (80 gastric cancer survivors and 400 non-cancer participants for the final analysis. Drinking, smoking, physical activity, antihypertensive medication adherence, self-reported diet control, and sodium intake accordance in the two groups were compared. A complex samples logistic regression analysis was conducted to assess any differences between the two groups.The group of hypertensive gastric cancer survivors had lower alcohol consumption (OR = 0.30; 95% CI: 0.14-0.66; p-value = 0.003. They were more likely to be on dietary control than the control group (OR = 3.12; 95% CI: 1.60-6.10; p-value = 0.001. However, there was no significant (p > 0.05 difference in sodium intake accordance or other health behaviors (including medication adherence, smoking, and physical activity between the two groups.Our results revealed that gastric cancer survivors with hypertension were more likely to be on dietary control with lower alcohol consumption than the control group. However, there was no significant difference in sodium intake accordance or other health behaviors between the two groups. Therefore, primary care physicians should inform cancer survivors about the appropriate health behaviors to reduce their risk of cardiovascular disease and improve their overall survival rate, even though they say they have been doing health behaviors.

  17. New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1990--31 July 1991

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O`Bradovich, G.J.; Young, M.P. [Purdue Univ., Lafayette, IN (United States)

    1993-01-01

    This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

  18. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum.

    Science.gov (United States)

    Seghilani, Mohamed S; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

    2016-12-05

    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here "orbital birefringence", based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create "orbital gain dichroism" allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

  19. Ka-band to L-band frequency down-conversion based on III-V-on-silicon photonic integrated circuits

    Science.gov (United States)

    Van Gasse, K.; Wang, Z.; Uvin, S.; De Deckere, B.; Mariën, J.; Thomassen, L.; Roelkens, G.

    2017-12-01

    In this work, we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we demonstrate frequency conversion using an integrated mode-locked laser and integrated modulator. In our experiments, five channels in the Ka-band (27.5-30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of - 20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a positive conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

  20. Reduction of bonding resistance of two-terminal III-V/Si tandem solar cells fabricated using smart-stack technology

    Science.gov (United States)

    Baba, Masaaki; Makita, Kikuo; Mizuno, Hidenori; Takato, Hidetaka; Sugaya, Takeyoshi; Yamada, Noboru

    2017-12-01

    This paper describes a method that remarkably reduces the bonding resistance of mechanically stacked two-terminal GaAs/Si and InGaP/Si tandem solar cells, where the top and bottom cells are bonded using a Pd nanoparticle array. A transparent conductive oxide (TCO) layer, which partially covers the surface of the Si bottom cell below the electrodes of the III-V top cell, significantly enhances the fill factor (FF) and cell conversion efficiency. The partial TCO layer reduces the bonding resistance and thus, increases the FF and efficiency of InGaP/Si by factors of 1.20 and 1.11, respectively. Eventually, the efficiency exceeds 15%. Minimizing the optical losses at the bonding interfaces of the TCO layer is important in the fabrication of high-efficiency solar cells. To help facilitate this, the optical losses in the tandem solar cells are thoroughly characterized through optical simulations and experimental verifications.

  1. Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

    Science.gov (United States)

    Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

    2015-10-01

    In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

  2. A CROSS-SECTIONAL SURVEY ON LIPID ABNORMALITIES ASSOCIATED WITH NONDIABETIC SUBJECTS WITH CHRONIC KIDNEY DISEASE, STAGE III-V

    Directory of Open Access Journals (Sweden)

    Sibi N. S

    2017-09-01

    Full Text Available BACKGROUND Chronic kidney disease is a worldwide public health problem. The adverse outcomes of chronic kidney disease, such as kidney failure, cardiovascular disease and premature death can be prevented or delayed. Chronic renal disease is accompanied by characteristic abnormalities of lipid metabolism. High cholesterol and triglyceride plasma levels have been demonstrated to be independent risk factors for progression of renal disease in humans. The pattern of lipid abnormalities in chronic renal disease patients in Kerala, India, has not been studied. The primary aim of the study is to describe the pattern of lipid profile in nondiabetic chronic kidney disease patients. The secondary objective is to determine the proportion of patients with nondiabetic chronic kidney disease who have lipid abnormalities. MATERIALS AND METHODS Our study is a cross-sectional study conducted in Department of Internal Medicine, Government Medical College, Trivandrum, during the time period of 22-08-2014 to 22-08-2015. The study was conducted after clearance from Institutional Ethics Committee and written informed consent was obtained from all study participants. 134 nondiabetic patients who were diagnosed to have Chronic Kidney disease (CKD according to KDOQI and NKF criteria with a GFR 70 years showed significantly higher serum creatinine value and lower EGFR. Significantly, higher values of Total Cholesterol (TC, Low-Density Lipoproteins (LDL, Triglycerides (TG and Very Low-Density Lipoproteins (VLDL were seen in the age group >70 years and in stage V CKD compared to other groups. CONCLUSION Dyslipidaemia is common in nondiabetic CKD patients (67.91%. Higher stages of CKD were associated with more dyslipidaemia.

  3. Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su; Kim, Jong Nam; Noh, Sam Kyu

    2014-01-01

    We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J sc . The maximum J sc , which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J sc value of 13.92 mA/cm 2 is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

  4. Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Kyung Hee University, Yongin (Korea, Republic of); Kim, Jong Nam [Pukyung National University, Pusan (Korea, Republic of); Noh, Sam Kyu [Korea Research Institute of Standards and Science, Daejon (Korea, Republic of)

    2014-05-15

    We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J{sub sc}. The maximum J{sub sc}, which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J{sub sc} value of 13.92 mA/cm{sup 2} is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

  5. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors.

    Science.gov (United States)

    Schowalter, M; Müller, K; Rosenauer, A

    2012-01-01

    Modified atomic scattering amplitudes (MASAs), taking into account the redistribution of charge due to bonds, and the respective correction factors considering the effect of static atomic displacements were computed for the chemically sensitive 002 reflection for ternary III-V and II-VI semiconductors. MASAs were derived from computations within the density functional theory formalism. Binary eight-atom unit cells were strained according to each strain state s (thin, intermediate, thick and fully relaxed electron microscopic specimen) and each concentration (x = 0, …, 1 in 0.01 steps), where the lattice parameters for composition x in strain state s were calculated using continuum elasticity theory. The concentration dependence was derived by computing MASAs for each of these binary cells. Correction factors for static atomic displacements were computed from relaxed atom positions by generating 50 × 50 × 50 supercells using the lattice parameter of the eight-atom unit cells. Atoms were randomly distributed according to the required composition. Polynomials were fitted to the composition dependence of the MASAs and the correction factors for the different strain states. Fit parameters are given in the paper.

  6. “Direct modulation of a hybrid III-V/Si DFB laser with MRR filtering for 22.5-Gb/s error-free dispersion-uncompensated transmission over 2.5-km SSMF

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Da Ros, Francesco; Ding, Yunhong

    2016-01-01

    Error-free and penalty-free transmission over 2.5 km SSMF of a 22.5 Gb/s data signal from a directly modulated hybrid III-V/Si DFB laser is achieved by enhancing the dispersion tolerance using a silicon micro-ring resonator....

  7. Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III-V nanostructure fabrication

    International Nuclear Information System (INIS)

    Kurowski, Ludovic; Bernard, Dorothee; Constant, Eugene; Decoster, Didier

    2004-01-01

    Hydrogen incorporation in n-type Si-doped GaAs epilayers is a well-known process which leads to the neutralization of the active Si impurities with the formation of SiH complexes. Recently, we have shown that SiH complex dissociation and, consequently, Si-dopant reactivation could occur when the epilayers are exposed to an electron beam. Two epilayers have been studied: the first is a 0.35 μm thick hydrogenated Si-doped GaAs epilayer and the second is Si planar-doped AlGaAs/GaAs/InGaAs heterostructures. Firstly, Hall effect measurements have been carried out on the epilayers exposed, after RF hydrogen plasma exposition, to increasing electron doses with different injection energies. For the 2D heterostructures, we have observed that the free carrier density N s does not vary significantly for weak electron densities. This reactivation presents a threshold value, contrary to the 0.35 μm epilayer in which N s varies quite linearly. It will be shown that such phenomena might be attributed to the filling of surface states as the dopants are progressively reactivated. Then, using a high spatial resolution electron beam lithography system, nanometric conductive patterns have been fabricated starting from hydrogenated epilayers. Electric measurements have been performed and the results obtained show that about 15 nm spatial resolution could be expected. In conclusion, taking into account this spatial resolution, the high spatial contrast of conductivity which could be expected due to the existence of an electron dose threshold, and the high mobility of the AlGaAs/GaAs/InGaAs heterostructure, the effects described in this paper could open a new way for the fabrication of III-V 1D or 2D mesoscopic structures for electronic or optoelectronic applications

  8. Self-Catalyzed CdTe Wires

    Directory of Open Access Journals (Sweden)

    Tom Baines

    2018-04-01

    Full Text Available CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111 oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

  9. Electric dipole (hyper)polarizabilities of selected X2Y2 and X3Y3 (X = Al, Ga, In and Y = P, As): III-V semiconductor clusters. An ab initio comparative study.

    Science.gov (United States)

    Karamanis, Panaghiotis; Pouchan, Claude; Leszczynski, Jerzy

    2008-12-25

    A systematic ab initio comparative study of the (hyper)polarizabilities of selected III-V stoichiometric semiconductor clusters has been carried out. Our investigation focuses on the ground state structures of the dimers and on two dissimilar trimer configurations of aluminum, gallium, indium phosphide and arsenide. The basis set effect on both the polarizabilities and hyperpolarizabilities of the studied systems has been explicitly taken into account relying on the augmented correlation consistent aug-cc-pVnZ (n = D, T, Q, and 5) basis sets series. In addition, a rough estimation of the effects of the relativistic effects on the investigated properties is provided by extension of the study to include calculations performed with relativistic electron core potentials (or pseudopotentials). Electron correlation effects have been estimated utilizing methods of increasing predictive reliability, e.g., the Møller-Plesset many body perturbation theory and the couple cluster approach. Our results reveal that in the considered semiconductor species the Group III elements (Al, Ga, In) play a vital role on the values of their relative (hyper)polarizability. At all levels of theory employed the most hyperpolarizable clusters are the indium derivatives while the aluminum arsenide clusters also exhibit high, comparable hyperpolarizabilities. The less hyperpolarizable species are those composed of gallium and this is associated with the strong influence of the nuclear charge on the valence electrons of Ga due to the poor shielding that is provided by the semicore d electrons. In addition, the analysis of the electronic structure and the hyperpolarizability magnitudes reveals that clusters, in which their bonding is characterized by strong electron transfer from the electropositive to the electronegative atoms, are less hyperpolarizable than species in which the corresponding electron transfer is weaker. Lastly, from the methodological point of view our results point out that

  10. Technological development for super-high efficiency solar cells. Technological development for crystalline compound solar cells (high-efficiency III-V tandem solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Kessho kagobutsu taiyo denchi no gijutsu kaihatsu (III-V zoku kagobutsu handotai taiyo denchi no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development of III-V compound semiconductor solar cells in fiscal 1994. (1) On development of epitaxial growth technology of lattice mismatching systems, the optimum structure of InGaAs strain intermediate layers was studied for reducing a dislocation density by lattice mismatching of GaAs layer grown on Si substrate and difference in thermal expansion coefficient. The effect of strain layer on dislocation reduction was found only at 250dyne/cm in strain energy. Growth of GaAs layers on the Si substrate treated by hydrofluoric acid at low temperature was attempted by MBE method. As a dislocation distribution was controlled by laying different atoms at hetero-interface, the dislocation density of growing layer surfaces decreased by concentration of dislocation at hetero-interface. (2) On development of high-efficiency tandem cell structure, tunnel junction characteristics, cell formation process and optimum design method of lattice matching tandem cells were studied, while thin film cell formation was basically studied for lattice mismatching tandem cells. 45 figs., 8 tabs.

  11. Desarrollo de la tecnología de MOVPE para el crecimiento de semiconductores III-V : fabricación de células solares para concentraciones luminosas elevadas

    OpenAIRE

    Galiana Blanco, Beatriz

    2011-01-01

    El trabajo de estas tesis trata sobre el desarrollo en el IES-UPM de la tecnología de crecimiento epitaxial de fase vapor mediante precursores metalorgánicos (MOVPE) para el crecimiento de células solares de semiconductores III-V para concentraciones luminosas elevadas. En la primera parte de la memoria se presentan los principios de la MOVPE y el estudio de los materiales semiconductores utilizados a lo largo de la tesis: GaAs, AlGaAs, GaInP y AlInP. Para ello, se ha analizado cómo influ...

  12. Caractérisations de matériaux et tests de composants des cellules solaires à base des nitrures des éléments III-V

    OpenAIRE

    Gorge , Vanessa

    2012-01-01

    Among III-V nitrides, the InGaN material has intensively been studied since the year 2000 for photovoltaic applications, in particular for multi-junction solar cells, thanks to its large tunable band gap covering almost the entire solar spectrum. Then, it will be possible to reach high efficiency and low cost. However, one of the problems of InGaN material is the absence of lattice-matched substrate leading to high defect density which limits device performances. We have thus studied the feas...

  13. Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations.

    Science.gov (United States)

    Afzalian, A; Vasen, T; Ramvall, P; Shen, T-M; Wu, J; Passlack, M

    2018-06-27

    We report the capability to simulate in a quantum-mechanical atomistic fashion record-large nanowire devices, featuring several hundred to millions of atoms and a diameter up to 18.2 nm. We have employed a tight-binding mode-space NEGF technique demonstrating by far the fastest (up to 10 000  ×  faster) but accurate (error  <  1%) atomistic simulations to date. Such technique and capability opens new avenues to explore and understand the physics of nanoscale and mesoscopic devices dominated by quantum effects. In particular, our method addresses in an unprecedented way the technologically-relevant case of band-to-band tunneling (BTBT) in III-V nanowire broken-gap heterojunction tunnel-FETs (HTFETs). We demonstrate an accurate match of simulated BTBT currents to experimental measurements in a 12 nm diameter InAs NW and in an InAs/GaSb Esaki tunneling diode. We apply our TB MS simulations and report the first in-depth atomistic study of the scaling potential of III-V GAA nanowire HTFETs including the effect of electron-phonon scattering and discrete dopant impurity band tails, quantifying the benefits of this technology for low-power low-voltage CMOS applications.

  14. Studies on II-VI and III-V semiconductor nanostructures. Introduction of the core/shell/shell structure and development of CdSe nanocrystals in an automatized procedure; Untersuchungen an II-VI und III-V Halbleiternanostrukturen. Einfuehrung der Core/shell/shell-Struktur und Darstellung von CdSe-Nanokristallen in einem automatisierten Verfahren

    Energy Technology Data Exchange (ETDEWEB)

    Mekis, I.

    2005-11-15

    The work in this dissertation is focused on the development and characterization of fluorescent II-VI and III-V-Nanomaterials. Highly luminescent and photostable Nanocrystals with narrow size distributions were prepared. It was shown that nearly monodisperse CdSe-Nanocrystals could be prepared from Cd(Ac){sub 2} and TOPSe in a mixture of TOPO/TOP/HDA/TDPA. Nearly monodisperse CdSe/CdS-Core/shell-Nanocrystals have been prepared in a one-pot-synthesis by injection of H{sub 2}S-Gas into a freshly prepared crude solution of CdSe. The passivation of the CdSe-core with an inorganic shell of CdS resulted in the drastic improvement of the photoluminescence-efficiency of the colloidal solution. Reproducible room-temperature quantum yields reached up to a value of 85%. Photostability investigations have proved the enhanced stability of CdSe/CdS-Nanocrystals compared to CdSe-Nanocrystals under illumination with UV-Light. A novel type of luminescent semiconductor nanocrystal structure has been developed, consisting of a CdSe core and two anorganic shells. Highly fluorescent and nearly monodisperse CdSe/CdS/ZnS- and CdSe/ZnSe/ZnS-Core/shell/shell-nanocrystals have been prepared via organometallic- and acetate-precursors. The Core/she ll/shell particles reached reproducible room-temperature quantum yields up to 85%. Photostability investigations among CdSe-core, CdSe/CdS-Core/shell- and CdSe/CdS/ZnS- Core/shell/-shell-nanocrystals under illumination with UV-light have proved the highest photostability of the Core/shell/shell-particles. The photostabilities of CdSe/ZnSe/ZnS-and CdSe/ZnS-nanocrystals were compared under illumination with intense laser-beam in air. Another part of this work focused on the development of an automated synthesis procedure of CdSe-nanocrystals by constructing and implementing a flow-reactor system. The size and structure of prepared nanocrystals depended considerably on the Cd:Se-precursorratio and the flow-rate. The preparation of CdSe using Cd(Ac)2

  15. Hybrid III-V Silicon Lasers

    Science.gov (United States)

    Bowers, John

    2014-03-01

    Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

  16. II-VI/III-V Heterojunction Lasers

    National Research Council Canada - National Science Library

    Gunshor, Robert

    1999-01-01

    ... in both. In the second part of the program we studied the growth and the optical evaluation of wide bandgap nitride heterostructures, an effort which included the first reporting of a GaN-based laser to be fabricated...

  17. Synthesis, characterization, spectroscopic and catalytic oxidation studies of Fe(III), Ni(II), Co(III), V(IV) and U(VI) Schiff base complexes with N, O donor ligands derived from 2,3-diaminopyridine

    Energy Technology Data Exchange (ETDEWEB)

    Zabardasti, Abedien; Shangaie, Sayed Asad [Lorestan Univ., Khorramabad (Iran, Islamic Republic of). Dept. of Chemistry

    2016-10-15

    Fifteen new complexes of transition metals were designed using three Schiff base ligands and aldol condensation of 2,3-diaminopyridine with 5-R-2-hydroxybenzaldehyde (R = F, Cl, Br) in the 1:2 molar ratio. The tetradentate ligands N,N{sup '}-bis(5-R-2-hydroxybenzaldehyde) pyridine were acquired with the common formula H{sub 2}[(5-R-sal){sub 2}py] and characterized by IR, UV-Vis spectra, {sup 1}H-NMR and elemental analysis. These ligands produce 1:1 complexes M[(5-R-sal){sub 2}py] with Fe(III), Ni(II), Co(III), V(IV) and U(VI) metal ions. The electronic property and nature of complexes were identified by IR, UV-Vis spectra, elemental analysis, X-ray crystallography and cyclic voltammetric methods. The catalytic activity of complexes for epoxidation of styrene with UHP as primary oxidant at minimal temperature (10 C) has been planned. The spectral data of the ligands and their complexes are deliberate in connection with the structural changes which happen due to complex preparation. The electrochemical outcome has good conformability with what suggested for electronic interaction among metal center and ligand by the UV-Vis and IR measurements.

  18. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for development of extra-high efficiency solar cells (fundamental research on extra-high efficiency III-V compound semiconductor tandem solar cells); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Chokokoritsu taiyo denchi no gijutsu kaihatsu no tame no kaiseki hyoka (chokokoritsu III-V zoku kagobutsu taiyo denchi gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Sekikawa, T; Kawanami, H; Sakata, I; Nagai, K; Matsumoto, K; Miki, K [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for development of extra-high efficiency III-V compound semiconductor tandem solar cells. Heteroepitaxial structures of compound semiconductors, such as GaAs, on silicon substrates are analyzed and evaluated by EXAFS, Raman and RHEED for the initial stage of the film growth and heterointerfaces. The device capable of in-situ observation of the growing surface structures during the period of heteroepitaxial film growth is introduced, to investigate the effects of rise-up and initial growth conditions on defects. The effects of atomic hydrogen on growth of a GaAs film on a silicon substrate are investigated from photoluminescence and solar cell characteristics, to confirm the effects of reducing defects. Heteroepitaxial growth of InGaP, which has the optimum band width for forming multi-junction silicon solar cells, on a silicon substrate is investigated, to find that an interfacial buffer layer is necessary to form a good film. 2 figs.

  19. The C-terminal N-glycosylation sites of the human alpha1,3/4-fucosyltransferase III, -V, and -VI (hFucTIII, -V, adn -VI) are necessary for the expression of full enzyme activity.

    Science.gov (United States)

    Christensen, L L; Jensen, U B; Bross, P; Orntoft, T F

    2000-09-01

    The alpha1,3/4-fucosyltransferases are involved in the synthesis of fucosylated cell surface glycoconjugates. Human alpha1,3/4-fucosyltransferase III, -V, and -VI (hFucTIII, -V, and -VI) contain two conserved C-terminal N-glycosylation sites (hFucTIII: Asn154 and Asn185; hFucTV: Asn167 and Asn198; and hFucTVI: Asn153 and Asn184). In the present study, we have analyzed the functional role of these potential N-glycosylation sites, laying the main emphasis on the sites in hFucTIII. Tunicamycin treatment completely abolished hFucTIII enzyme activity while castanospermine treatment diminished hFucTIII enzyme activity to approximately 40% of the activity of the native enzyme. To further analyze the role of the conserved N-glycosylation sites in hFucTIII, -V, and -VI, we made a series of mutant genomic DNAs in which the asparagine residues in the potential C-terminal N-glycosylation sites were replaced by glutamine. Subsequently, the hFucTIII, -V, and -VI wild type and the mutants were expressed in COS-7 cells. All the mutants exhibited lower enzyme activity than the wild type and elimination of individual sites had different effects on the activity. The mutations did not affect the protein level of the mutants in the cells, but reduced the molecular mass as predicted. Kinetic analysis of hFucTIII revealed that lack of glycosylation at Asn185 did not change the Km values for the oligosaccharide acceptor and the nucleotide sugar donor. The present study demonstrates that hFucTIII, -V, and -VI require N-glycosylation at the two conserved C-terminal N-glycosylation sites for expression of full enzyme activity.

  20. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    International Nuclear Information System (INIS)

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

    2014-01-01

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers

  1. Quantum transport in III-V-semiconductor nanocolumns; Quantentransport in III-V-Halbleiternanosaeulen

    Energy Technology Data Exchange (ETDEWEB)

    Wensorra, Jakob

    2009-03-20

    The goal of this work has been to investigate und understand the electronic transport properties of vertical GaAs/AlAs nanocolumn resonant tunneling diodes (RTDs) and field effect transistors (RTTs) as well as of vertical InAs nanocolumn phase interference diodes. Besides the fabrication and electrical characterization of the devices, numerical calculations, simulations and quantum transport models represent the second important part of the work. GaAs/AlAs and InAs nanocolumns with lateral dimensions down to 30 nm have been processed by top-down approach. Room temperature DC electrical measurements on the nano-RTDs show a distinct negative differential resistance in the I-V characteristics for devices down to 30 nm lateral dimension. The miniaturization of the RTDs leads to the degradation of the transport properties, especially of the peak to valley current ratio (PVR), due to the increased surface scattering. Apart from the main current peak, new substructures can be observed in the I-V characteristics. These are shoulder like features for columns with diameters between 80 nm and 100 nm but become clear peaks when the column diameters are in the 55-75 nm range. For sub-65 nm column lateral dimensions, a strong increase of the PVR and a sharp single peak is observed. A local maximum of the PVR of 3 is reached for columns with 50 nm diameter. The sub-40 nm devices show only space charge limited currents in the I-V characteristics. This behavior can be shifted to smaller or larger diameters by increasing or reduction of the channel doping. For the smallest nanocolumns the lateral quantum confinement, caused by the low dimensionality of the system, leads to the formation of a 3D quantum-point-contact (QPC) in front of the DBQW structure. The quantization in this QPC depends on the column diameter and for a 50 nm column it exceeds the room temperature thermal broadening of the Fermi distribution function of about 25 meV. The measurements of the nano-RTTs indicate a good control of the device current by the gate voltage, without gate leakage. The peak current swing factor (the ratio between peak currents corresponding to the limits of a certain interval of the gate voltage) is about 3 for 150 nm diameter nano-RTTs but reach 6 for 60 nm diameter nano-RTTs (functionality based on the quantum collimation effect). Apart from GaAs/AlAs nanocolumns, InAs nanocolumns have been investigated as well. Nano-diodes were characterized by DC room temperature measurements and low temperature magneto-transport measurements. At room temperature, a linear behavior is observed in the I-V characteristics. Periodic oscillations of the resistance were measured by varying magnetic field at low temperatures. (orig.)

  2. Elastic constants of nanoporous III-V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Janovská, Michaela; Sedlák, Petr; Kruisová, Alena; Seiner, Hanuš; Landa, Michal; Grym, Jan

    2015-01-01

    Roč. 48, č. 24 (2015) ISSN 0022-3727 R&D Projects: GA ČR GB14-36566G Institutional support: RVO:61388998 ; RVO:67985882 Keywords : nanoporous semiconductors * resonant ultrasound spectroscopy * finite elements modelling Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (URE-Y) Impact factor: 2.772, year: 2015 http://iopscience.iop.org/0022-3727/48/24/245102/article

  3. [Update of breast cancer in Primary Care (III/V)].

    Science.gov (United States)

    Álvarez Hernández, C; Vich Pérez, P; Brusint, B; Cuadrado Rouco, C; Díaz García, N; Robles Díaz, L

    2014-01-01

    Breast cancer is a prevalent disease with implications in all aspects of patientś life, therefore, family doctors must know this pathology in depth, in order to optimize the health care provided to these patients with the best available resources. This series of five articles on breast cancer is based on a review of the scientific literature of the last ten years. This third article will review the clinical context and the staging and prognostic factors of the disease. This summary report aims to provide a global, current and practical review about this problem, providing answers to family doctors and helping them to be by the patients for their benefit throughout their illness. Copyright © 2014 Sociedad Española de Médicos de Atención Primaria (SEMERGEN). Publicado por Elsevier España. All rights reserved.

  4. Characterization of Hydrogen Complex Formation in III-V Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Williams, Michael D

    2006-09-28

    Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

  5. Hybrid III-V/SOI resonant cavity enhanced photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-01-01

    A hybrid III–V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated...... as part of the HG reflector, enabling a very compact vertical cavity. Numerical investigations show that a quantum efficiency close to 100 % and a detection linewidth of about 1 nm can be achieved, which are desirable for wavelength division multiplexing applications. Based on these results, a hybrid RCE...

  6. Free Surface Properties of III-V Compound Semiconductor Surfaces.

    Science.gov (United States)

    1980-06-01

    selvage. Most important is the fact that atomic displacements also occur up to two layers into the substrate in the IaSb (ll0) selvage, presumably because of...result is that the interaction is of a disordering nature. 1 2,1 3 We took LEED measurements for a very large range of exposure to molecular oxygen (103...which the Al replaces the Ga. Arguments in favor of this reaction are given by measured photoemission peak shifts: 1 8󈧗 the Ga 3-d core level shifts

  7. Theory of Doping and Defects in III-V Nitrides

    OpenAIRE

    van de Walle, Chris G.; Stampfl, Catherine; Neugebauer, Joerg

    1998-01-01

    Doping problems in GaN and in AlGaN alloys are addressed on the basis of state-of-the-art first-principles calculations. For n-type doping we find that nitrogen vacancies are too high in energy to be incorporated during growth, but silicon and oxygen readily form donors. The properties of oxygen, including DX-center formation, support it as the main cause of unintentional n-type conductivity. For p-type doping we find that the solubility of Mg is the main factor limiting the hole concentratio...

  8. Ion implantation and annealing studies in III-V nitrides

    International Nuclear Information System (INIS)

    Zolper, J.C.; Pearton, S.J.

    1996-01-01

    Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n + -surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10 16 cm -2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material

  9. Likviditní riziko podle Basel III v EU

    OpenAIRE

    Mošnová, Alžběta

    2014-01-01

    In order to address the deficiencies in the banking regulation revealed by the recent financial crisis the Basel III introduces two minimum standards for funding liquidity, Liquidity Coverage Ratio (LCR) and Net Stable Funding Ratio (NSFR). The goal of this thesis is to analyze whether the NSFR is defined optimally or whether the Basel Committee on Banking Supervision (BCBS) will be forced to relax NSFR conditions similarly as happened by the LCR. Based on the approximation of the NSFR betwee...

  10. Nonlinear Frequency Conversion in III-V Semiconductor Photonic Crystals

    Science.gov (United States)

    2012-03-01

    benefited early in my PhD from the assistance of Dirk Englund and Vanessa Sih. Subsequently, I was fortunate to collab- orate with newer members of the...to defense practice talks. I would also like to acknowledge Seth Lloyd, Vicky Wen, Jason Pelc, Qiang Zhang, Peter McMahon, Liz Edwards , Stephanie...2006. [67] Z. Yang, P. Chak, A. D. Bristow, H. M. van Driel, R. Iyer, J. S. Aitchison, A. L. Smirl, and J. E. Sipe, “Enhanced second-harmonic

  11. Growth far from equilibrium: Examples from III-V semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kuech, Thomas F. [Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Babcock, Susan E. [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Mawst, Luke [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2016-12-15

    The development of new applications has driven the field of materials design and synthesis to investigate materials that are not thermodynamically stable phases. Materials which are not thermodynamically stable can be synthesized and used in many applications. These materials are kinetically stabilized during use. The formation of such metastable materials requires both an understanding of the associated thermochemistry and the key surface transport processes present during growth. Phase separation is most easily accomplished at the growth surface during synthesis where mass transport is most rapid. These surface transport processes are sensitive to the surface stoichiometry, reconstruction, and chemistry as well as the growth temperature. The formation of new metastable semiconducting alloys with compositions deep within a compositional miscibility gap serves as model systems for the understanding of the surface chemical and physical processes controlling their formation. The GaAs{sub 1−y}Bi{sub y} system is used here to elucidate the role of surface chemistry in the formation of a homogeneous metastable composition during the chemical vapor deposition of the alloy system.

  12. Enhancing Hole Mobility in III-V Semiconductors

    Science.gov (United States)

    2012-05-21

    offset, and the identification of the dominant scattering mechanism. Section V reports on gated Hall bar measure- ments and mobility results. Finally, the...achieved using the AlAsxSb1x barrier (approach B) as compared to AlyGa1ySb barrier (approach A), which was also expected from the bulk band lineup in

  13. High bandgap III-V alloys for high efficiency optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  14. Theoretical models of ferromagnetic III-V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; Kučera, Jan; MacDonald, A. H.

    2003-01-01

    Roč. 3, - (2003), s. 461-464 ISSN 1567-1739. [Mesoscopic Electronics COST Workshop. Catania, 16.10.2002-19.10.2002] Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.117, year: 2002

  15. Critical thickness of atomically ordered III-V alloys

    Energy Technology Data Exchange (ETDEWEB)

    France, R. M.; McMahon, W. E.; Guthrey, H. L. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401 (United States)

    2015-10-12

    The critical thickness model is modified with a general boundary energy that describes the change in bulk energy as a dislocation regularly alters the atomic structure of an ordered material. The model is evaluated for dislocations gliding through CuPt-ordered GaInP and GaInAs, where the boundary energy is negative and the boundary is stable. With ordering present, the critical thickness is significantly lowered and remains finite as the mismatch strain approaches zero. The reduction in critical thickness is most significant when the order parameter is greatest and the amount of misfit energy is low. The modified model is experimentally validated for low-misfit GaInP epilayers with varying order parameters using in situ wafer curvature and ex situ cathodoluminescence. With strong ordering, relaxation begins at a lower thickness and occurs at a greater rate, which is consistent with a lower critical thickness and increased glide force. Thus, atomic ordering is an important consideration for the stability of lattice-mismatched devices.

  16. Ion Implantation in III-V Compound Semiconductors

    Science.gov (United States)

    1984-09-01

    340 keV H + -0 Ga P  O UES-723-292 !:• (H o>ray *P-K X - rayO Ga-K X -ray iii! RBS * ..I -iO.. 0 10I to1. 01 • .0 -. I0 1 LI =i, O I 0 01 0.J 10...Identity by blo ," pume) Ion Implantation, GaAs, Hall effect, electrical resistivity, Rutherford Backscattering (RBS), channeling, Proton induced x -ray...Mebility (jH) upon Aiinealing Temperature (TA) for 1 X 101 /cm• Dose Samples of GaAs:Mg with Three Different Capping Methods 33 p 14 Dependence of Surface

  17. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N

    2002-01-01

    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  18. Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

    Science.gov (United States)

    Li, Sichao; Luo, Wei; Gu, Jiangjiang; Cheng, Xiang; Ye, Peide D; Wu, Yanqing

    2015-12-09

    Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using top-down fabrication approaches, which are compatible with commercial silicon platform.

  19. Catalyst-free, III-V nanowire photovoltaics

    Science.gov (United States)

    Davies, D. G.; Lambert, N.; Fry, P. W.; Foster, A.; Krysa, A. B.; Wilson, L. R.

    2014-05-01

    We report on room temperature, photovoltaic operation of catalyst-free GaAs p-i-n junction nanowire arrays. Growth studies were first performed to determine the optimum conditions for controlling the vertical and lateral growth of the nanowires. Following this, devices consisting of axial p-i-n junctions were fabricated by planarising the nanowire arrays with a hard baked polymer. We discuss the photovoltaic properties of this proof-of-concept device, and significant improvements to be made during the growth.

  20. New group III precursors for the MOVPE of GaAs and InP based material

    International Nuclear Information System (INIS)

    Hostaler, M.; Pohl, L.; Brauers, A.; Balk, P.; Frese, V.; Hovel, R.; Regel, G.K.; Hardtdegen, H.

    1989-01-01

    This paper presents proposals for the synthesis of several group III metal organics (In, Ga, Al compounds) and preliminary results on their use in the MOVPE (metal organic vapor phase epitaxy) of III-V semiconductors. The common feature of all these precursors is that they are saturated by inter- or intramolecular coordination. They are even non-pyrophoric and air resistant which is an interesting aspect with respect to safe handling. In addition, the compounds are liquid at room temperature with a low but sufficient vapor pressure for MOVPE without additional heating of the source

  1. Group X

    Energy Technology Data Exchange (ETDEWEB)

    Fields, Susannah

    2007-08-16

    This project is currently under contract for research through the Department of Homeland Security until 2011. The group I was responsible for studying has to remain confidential so as not to affect the current project. All dates, reference links and authors, and other distinguishing characteristics of the original group have been removed from this report. All references to the name of this group or the individual splinter groups has been changed to 'Group X'. I have been collecting texts from a variety of sources intended for the use of recruiting and radicalizing members for Group X splinter groups for the purpose of researching the motivation and intent of leaders of those groups and their influence over the likelihood of group radicalization. This work included visiting many Group X websites to find information on splinter group leaders and finding their statements to new and old members. This proved difficult because the splinter groups of Group X are united in beliefs, but differ in public opinion. They are eager to tear each other down, prove their superiority, and yet remain anonymous. After a few weeks of intense searching, a list of eight recruiting texts and eight radicalizing texts from a variety of Group X leaders were compiled.

  2. Group Flow and Group Genius

    Science.gov (United States)

    Sawyer, Keith

    2015-01-01

    Keith Sawyer views the spontaneous collaboration of group creativity and improvisation actions as "group flow," which organizations can use to function at optimum levels. Sawyer establishes ideal conditions for group flow: group goals, close listening, complete concentration, being in control, blending egos, equal participation, knowing…

  3. Permutation groups

    CERN Document Server

    Passman, Donald S

    2012-01-01

    This volume by a prominent authority on permutation groups consists of lecture notes that provide a self-contained account of distinct classification theorems. A ready source of frequently quoted but usually inaccessible theorems, it is ideally suited for professional group theorists as well as students with a solid background in modern algebra.The three-part treatment begins with an introductory chapter and advances to an economical development of the tools of basic group theory, including group extensions, transfer theorems, and group representations and characters. The final chapter feature

  4. Group devaluation and group identification

    NARCIS (Netherlands)

    Leach, C.W.; Rodriguez Mosquera, P.M.; Vliek, M.L.W.; Hirt, E.

    2010-01-01

    In three studies, we showed that increased in-group identification after (perceived or actual) group devaluation is an assertion of a (preexisting) positive social identity that counters the negative social identity implied in societal devaluation. Two studies with real-world groups used order

  5. Lie groups and algebraic groups

    Indian Academy of Sciences (India)

    We give an exposition of certain topics in Lie groups and algebraic groups. This is not a complete ... of a polynomial equation is equivalent to the solva- bility of the equation ..... to a subgroup of the group of roots of unity in k (in particular, it is a ...

  6. Group Work

    Science.gov (United States)

    Wilson, Kristy J.; Brickman, Peggy; Brame, Cynthia J.

    2018-01-01

    Science, technology, engineering, and mathematics faculty are increasingly incorporating both formal and informal group work in their courses. Implementing group work can be improved by an understanding of the extensive body of educational research studies on this topic. This essay describes an online, evidence-based teaching guide published by…

  7. Reflection groups

    International Nuclear Information System (INIS)

    Eggermont, G.

    2006-01-01

    In 2005, PISA organised proactive meetings of reflection groups on involvement in decision making, expert culture and ethical aspects of radiation protection.All reflection group meetings address particular targeted audiences while the output publication in book form is put forward

  8. Group theory

    CERN Document Server

    Scott, W R

    2010-01-01

    Here is a clear, well-organized coverage of the most standard theorems, including isomorphism theorems, transformations and subgroups, direct sums, abelian groups, and more. This undergraduate-level text features more than 500 exercises.

  9. Group Grammar

    Science.gov (United States)

    Adams, Karen

    2015-01-01

    In this article Karen Adams demonstrates how to incorporate group grammar techniques into a classroom activity. In the activity, students practice using the target grammar to do something they naturally enjoy: learning about each other.

  10. Computer group

    International Nuclear Information System (INIS)

    Bauer, H.; Black, I.; Heusler, A.; Hoeptner, G.; Krafft, F.; Lang, R.; Moellenkamp, R.; Mueller, W.; Mueller, W.F.; Schati, C.; Schmidt, A.; Schwind, D.; Weber, G.

    1983-01-01

    The computer groups has been reorganized to take charge for the general purpose computers DEC10 and VAX and the computer network (Dataswitch, DECnet, IBM - connections to GSI and IPP, preparation for Datex-P). (orig.)

  11. Group learning

    DEFF Research Database (Denmark)

    Pimentel, Ricardo; Noguira, Eloy Eros da Silva; Elkjær, Bente

    The article presents a study that aims at the apprehension of the group learning in a top management team composed by teachers in a Brazilian Waldorf school whose management is collective. After deciding to extend the school, they had problems recruiting teachers who were already trained based...... on the Steiner´s ideas, which created practical problems for conducting management activities. The research seeks to understand how that group of teachers collectively manage the school, facing the lack of resources, a significant heterogeneity in the relationships, and the conflicts and contradictions......, and they are interrelated to the group learning as the construction, maintenance and reconstruction of the intelligibility of practices. From this perspective, it can be said that learning is a practice and not an exceptional phenomenon. Building, maintaining and rebuilding the intelligibility is the group learning...

  12. Group technology

    International Nuclear Information System (INIS)

    Rome, C.P.

    1976-01-01

    Group Technology has been conceptually applied to the manufacture of batch-lots of 554 machined electromechanical parts which now require 79 different types of metal-removal tools. The products have been grouped into 7 distinct families which require from 8 to 22 machines in each machine-cell. Throughput time can be significantly reduced and savings can be realized from tooling, direct-labor, and indirect-labor costs

  13. Abelian groups

    CERN Document Server

    Fuchs, László

    2015-01-01

    Written by one of the subject’s foremost experts, this book focuses on the central developments and modern methods of the advanced theory of abelian groups, while remaining accessible, as an introduction and reference, to the non-specialist. It provides a coherent source for results scattered throughout the research literature with lots of new proofs. The presentation highlights major trends that have radically changed the modern character of the subject, in particular, the use of homological methods in the structure theory of various classes of abelian groups, and the use of advanced set-theoretical methods in the study of undecidability problems. The treatment of the latter trend includes Shelah’s seminal work on the undecidability in ZFC of Whitehead’s Problem; while the treatment of the former trend includes an extensive (but non-exhaustive) study of p-groups, torsion-free groups, mixed groups, and important classes of groups arising from ring theory. To prepare the reader to tackle these topics, th...

  14. Growth and properties of self-catalyzed (In,Mn)As nanowires

    International Nuclear Information System (INIS)

    Bouravleuv, Alexei; Soshnikov, Ilya; Cirlin, George; Reznik, Rodion; Khrebtov, Artem; Samsonenko, Yuriy; Werner, Peter; Savin, Alexander; Lipsanen, Harri

    2016-01-01

    Mn-assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side-walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Group dynamics.

    Science.gov (United States)

    Scandiffio, A L

    1990-12-01

    Group dynamics play a significant role within any organization, culture, or unit. The important thing to remember with any of these structures is that they are made up of people--people with different ideas, motivations, background, and sometimes different agendas. Most groups, formal or informal, look for a leader in an effort to maintain cohesiveness of the unit. At times, that cultural bond must be developed; once developed, it must be nurtured. There are also times that one of the group no longer finds the culture comfortable and begins to act out behaviorally. It is these times that become trying for the leader as she or he attempts to remain objective when that which was once in the building phase of group cohesiveness starts to fall apart. At all times, the manager must continue to view the employee creating the disturbance as an integral part of the group. It is at this time that it is beneficial to perceive the employee exhibiting problem behaviors as a special employee, as one who needs the benefit of your experience and skills, as one who is still part of the group. It is also during this time that the manager should focus upon her or his own views in the area of power, communication, and the corporate culture of the unit that one has established before attempting to understand another's point of view. Once we understand our own motivation and accept ourselves, it is then that we may move on to offer assistance to another. Once we understand our insecurities recognizing staff dysfunction as a symptom of system dysfunction will not be so threatening to the concept of the manager that we perceive ourselves to be. It takes a secure person to admit that she or he favors staff before deciding to do something to change things. The important thing to know is that it can be done. The favored staff can find a new way of relating to others, the special employee can find new modes of behavior (and even find self-esteem in the process), the group can find new ways

  16. Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks

    International Nuclear Information System (INIS)

    Calleja, E.; Ristic, J.; Fernandez-Garrido, S.; Sanchez-Garcia, M.A.; Grandal, J.; Cerutti, L.; Trampert, A.; Jahn, U.; Sanchez, G.; Griol, A.; Sanchez, B.

    2007-01-01

    The growth conditions to achieve group-III-nitride nanocolumns and nanocolumnar heterostructures by plasma-assisted molecular beam epitaxy are studied. The evolution of the nanocolumnar morphology with the growth conditions is determined for (Ga,Al)N and (In,Ga)N nanocolumns. The mechanisms behind the nanocolumnar growth under high N-rich conditions are clarified in the sense that no seeding or catalysts are required, as it is the case in the vapour-liquid-solid model that applies to most nanocolumns grown by metal organic chemical vapour deposition, either with group-III nitrides, II-VI or III-V compounds. Some examples of nanocolumnar heterostructures are given, like quantum disks and cylindrical nanocavities. Preliminary results on the growth of arrays of ordered GaN nanocolumns are reported. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Group representations

    CERN Document Server

    Karpilovsky, G

    1994-01-01

    This third volume can be roughly divided into two parts. The first part is devoted to the investigation of various properties of projective characters. Special attention is drawn to spin representations and their character tables and to various correspondences for projective characters. Among other topics, projective Schur index and projective representations of abelian groups are covered. The last topic is investigated by introducing a symplectic geometry on finite abelian groups. The second part is devoted to Clifford theory for graded algebras and its application to the corresponding theory

  18. Lego Group

    DEFF Research Database (Denmark)

    Møller Larsen, Marcus; Pedersen, Torben; Slepniov, Dmitrij

    2010-01-01

    The last years’ rather adventurous journey from 2004 to 2009 had taught the fifth-largest toy-maker in the world - the LEGO Group - the importance of managing the global supply chain effectively. In order to survive the largest internal financial crisis in its roughly 70 years of existence......, the management had, among many initiatives, decided to offshore and outsource a major chunk of its production to Flextronics. In this pursuit of rapid cost-cutting sourcing advantages, the LEGO Group planned to license out as much as 80 per cent of its production besides closing down major parts...

  19. Informal groups

    NARCIS (Netherlands)

    E. van den Berg; P. van Houwelingen; J. de Hart

    2011-01-01

    Original title: Informele groepen Going out running with a group of friends, rather than joining an official sports club. Individuals who decide to take action themselves rather than giving money to good causes. Maintaining contact with others not as a member of an association, but through an

  20. COMMUNICATIONS GROUP

    CERN Multimedia

    L. Taylor

    2011-01-01

    The CMS Communications Group, established at the start of 2010, has been busy in all three areas of its responsibility: (1) Communications Infrastructure, (2) Information Systems, and (3) Outreach and Education. Communications Infrastructure There are now 55 CMS Centres worldwide that are well used by physicists working on remote CMS shifts, Computing operations, data quality monitoring, data analysis and outreach. The CMS Centre@CERN in Meyrin, is the centre of the CMS offline and computing operations, hosting dedicated analysis efforts such as during the CMS Heavy Ion lead-lead running. With a majority of CMS sub-detectors now operating in a “shifterless” mode, many monitoring operations are now routinely performed from there, rather than in the main Control Room at P5. The CMS Communications Group, CERN IT and the EVO team are providing excellent videoconferencing support for the rapidly-increasing number of CMS meetings. In parallel, CERN IT and ...

  1. Group therapy

    International Nuclear Information System (INIS)

    Anon.

    1993-01-01

    Full text: In his review 'Genesis of Unified Gauge Theories' at the symposium in Honour of Abdus Salam (June, page 23), Tom Kibble of Imperial College, London, looked back to the physics events around Salam from 1959-67. He described how, in the early 1960s, people were pushing to enlarge the symmetry of strong interactions beyond the SU(2) of isospin and incorporate the additional strangeness quantum number. Kibble wrote - 'Salam had students working on every conceivable symmetry group. One of these was Yuval Ne'eman, who had the good fortune and/or prescience to work on SU(3). From that work, and of course from the independent work of Murray Gell- Mann, stemmed the Eightfold Way, with its triumphant vindication in the discovery of the omega-minus in 1964.' Yuval Ne'eman writes - 'I was the Defence Attaché at the Israeli Embassy in London and was admitted by Salam as a part-time graduate student when I arrived in 1958. I started research after resigning from the Embassy in May 1960. Salam suggested a problem: provide vector mesons with mass - the problem which was eventually solved by Higgs, Guralnik, Kibble,.... (as described by Kibble in his article). I explained to Salam that I had become interested in symmetry. Nobody at Imperial College at the time, other than Salam himself, was doing anything in groups, and attention further afield was focused on the rotation - SO(N) - groups. Reacting to my own half-baked schemes, Salam told me to forget about the rotation groups he taught us, and study group theory in depth, directing me to Eugene Dynkin's classification of Lie subalgebras, about which he had heard from Morton Hamermesh. I found Dynkin incomprehensible without first learning about Lie algebras from Henri Cartan's thesis, which luckily had been reproduced by Dynkin in his 1946 thesis, using his diagram method. From a copy of a translation of Dynkin's thesis which I found in the British Museum Library, I

  2. COMMUNICATIONS GROUP

    CERN Multimedia

    L. Taylor

    2010-01-01

    The CMS Communications Group, established at the start of 2010, has been strengthening the activities in all three areas of its responsibility: (1) Communications Infrastructure, (2) Information Systems, and (3) Outreach and Education. Communications Infrastructure The Communications Group has invested a lot of effort to support the operations needs of CMS. Hence, the CMS Centres where physicists work on remote CMS shifts, Data Quality Monitoring, and Data Analysis are running very smoothly. There are now 55 CMS Centres worldwide, up from just 16 at the start of CMS data-taking. The latest to join are Imperial College London, the University of Iowa, and the Università di Napoli. The CMS Centre@CERN in Meyrin, which is now full repaired after the major flooding at the beginning of the year, has been at the centre of CMS offline and computing operations, most recently hosting a large fraction of the CMS Heavy Ion community during the lead-lead run. A number of sub-detector shifts can now take pla...

  3. Group play

    DEFF Research Database (Denmark)

    Tychsen, Anders; Hitchens, Michael; Brolund, Thea

    2008-01-01

    Role-playing games (RPGs) are a well-known game form, existing in a number of formats, including tabletop, live action, and various digital forms. Despite their popularity, empirical studies of these games are relatively rare. In particular there have been few examinations of the effects of the v......Role-playing games (RPGs) are a well-known game form, existing in a number of formats, including tabletop, live action, and various digital forms. Despite their popularity, empirical studies of these games are relatively rare. In particular there have been few examinations of the effects...... of the various formats used by RPGs on the gaming experience. This article presents the results of an empirical study, examining how multi-player tabletop RPGs are affected as they are ported to the digital medium. Issues examined include the use of disposition assessments to predict play experience, the effect...... of group dynamics, the influence of the fictional game characters and the comparative play experience between the two formats. The results indicate that group dynamics and the relationship between the players and their digital characters, are integral to the quality of the gaming experience in multiplayer...

  4. COMMUNICATIONS GROUP

    CERN Multimedia

    L. Taylor

    2011-01-01

    The CMS Communications Group has been busy in all three areas of its responsibility: (1) Communications Infrastructure, (2) Information Systems, and (3) Outreach and Education. Communications Infrastructure The 55 CMS Centres worldwide are well used by physicists working on remote CMS shifts, Computing operations, data quality monitoring, data analysis and outreach. The CMS Centre@CERN in Meyrin, is the centre of the CMS Offline and Computing operations, and a number of subdetector shifts can now take place there, rather than in the main Control Room at P5. A new CMS meeting room has been equipped for videoconferencing in building 42, next to building 40. Our building 28 meeting room and the facilities at P5 will be refurbished soon and plans are underway to steadily upgrade the ageing equipment in all 15 CMS meeting rooms at CERN. The CMS evaluation of the Vidyo tool indicates that it is not yet ready to be considered as a potential replacement for EVO. The Communications Group provides the CMS-TV (web) cha...

  5. COMMUNICATIONS GROUP

    CERN Multimedia

    L. Taylor

    2010-01-01

    The recently established CMS Communications Group, led by Lucas Taylor, has been busy in all three of its main are areas of responsibility: Communications Infrastructure, Information Systems, and Outreach and Education Communications Infrastructure The damage caused by the flooding of the CMS Centre@CERN on 21st December has been completely repaired and all systems are back in operation. Major repairs were made to the roofs, ceilings and one third of the floor had to be completely replaced. Throughout these works, the CMS Centre was kept operating and even hosted a major press event for first 7 TeV collisions, as described below. Incremental work behind the scenes is steadily improving the quality of the CMS communications infrastructure, particularly Webcasting, video conferencing, and meeting rooms at CERN. CERN/IT is also deploying a pilot service of a new videoconference tool called Vidyo, to assess whether it might provide an enhanced service at a lower cost, compared to the EVO tool currently in w...

  6. COMMUNICATIONS GROUP

    CERN Multimedia

    L. Taylor

    2011-01-01

    Communications Infrastructure The 55 CMS Centres worldwide are well used by physicists working on remote CMS shifts, Computing operations, data quality monitoring, data analysis and outreach. The CMS Centre@CERN in Meyrin is particularly busy at the moment, hosting about 50 physicists taking part in the heavy-ion data-taking and analysis. Three new CMS meeting room will be equipped for videoconferencing in early 2012: 40/5B-08, 42/R-031, and 28/S-029. The CMS-TV service showing LHC Page 1, CMS Page 1, etc. (http://cmsdoc.cern.ch/cmscc/projector/index.jsp) is now also available for mobile devices: http://cern.ch/mcmstv. Figure 12: Screenshots of CMS-TV for mobile devices Information Systems CMS has a new web site: (http://cern.ch/cms) using a modern web Content Management System to ensure content and links are managed and updated easily and coherently. It covers all CMS sub-projects and groups, replacing the iCMS internal pages. It also incorporates the existing CMS public web site (http:/...

  7. COMMUNICATIONS GROUP

    CERN Multimedia

    L. Taylor

    2012-01-01

      Outreach and Education We are fortunate that our research has captured the public imagination, even though this inevitably puts us under the global media spotlight, as we saw with the Higgs seminar at CERN in December, which had 110,000 distinct webcast viewers. The media interest was huge with 71 media organisations registering to come to CERN to cover the Higgs seminar, which was followed by a press briefing with the DG and Spokespersons. This event resulted in about 2,000 generally positive stories in the global media. For this seminar, the CMS Communications Group prepared up-to-date news and public material, including links to the CMS results, animations and event displays [http://cern.ch/go/Ch8thttp://cern.ch/go/Ch8t]. There were 44,000 page-views on the CMS public website, with the Higgs news article being by far the most popular item. CMS event displays from iSpy are fast becoming the iconic media images, featuring on numerous major news outlets (BBC, CNN, MSN...) as well as in the sci...

  8. Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires; Phasenkohaerenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Estevez Hernandez, Sergio

    2009-10-16

    Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e{sup 2}/h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties of gated InN, InAs and GaAs/AlGaAs nanowires were investigated. Magnetic field-dependent as well as gate-dependent measurements of universal conductance fluctuations were performed to gain information on the phase coherence in the electron transport. In this work was found a pronounced decrease in the variance of the conductance by about a factor of 2 in gate-dependent fluctuation measurements if a magnetic field is applied. This effect is explained by the suppression of the Cooperon channel of the electron correlation contributing to the conductance fluctuations. Despite the fact that the diameter of the nanowire is less than 100 nm a clear weak antilocalization effect is found in the averaged magnetoconductance being in strong contrast to the suppression of weak antilocalization for narrow quantum wires based on planar two-dimensional electron gases. The unexpected robustness of the weak antilocalization effect observed here is attributed to the tubular topology of the surface electron gas in InN and InAs nanowires. (orig.)

  9. The influence of nitrogen on the photoluminescence of metastable III-V nitrides; Einflussvon Stickstoff auf die Photolumineszenz von metastabilen III-V-Nitriden

    Energy Technology Data Exchange (ETDEWEB)

    Hantke, K.

    2005-12-20

    The work presented here mainly summarizes experimental and theoretical results enlightening the material-specific, optical properties of (GaIn)(NAs). The primarily used experiment is the time-resolved photoluminescence spectroscopy. The comparison of experiment and theory yields a simple exponential form for the density of localized states. Furthermore it can be confirmed that the typical energy scale of the localization is diminished by the annealing step as well as by the hydrogenation process. In a next step, the investigation of (GaIn)(NAs) epitactical layers, that were optimized for solar cell application, reveals astonishing features: The minority-carrier diffusion-length of the p-doped layers is found to be slightly higher than for the n-doped material implying that (GaIn)(NAs) solar cells with a p-on-n structure should be preferred in terms of higher quantum efficiency. A new effect found during the investigations is the optimization of the internal quantum efficiency of the (GaIn)(NAs) structures after irradiation with intensive laser light attributed to the laser-induced annealing of defects. The final paragraph concentrates on the successful comparison of time-resolved photoluminescence, photo-modulated reflection measurements and a microscopic many-body theory. A profound understanding of the type-I type-II transition in (GaIn)As/Ga(NAs) heterostructures is achieved resulting in material-specific information as e.g. the temperature-dependent bandgap energies, the band offsets in Ga(NAs)/GaAs and (GaIn)As/Ga(NAs) respectively, as well as the interaction potential VN dependent on the nitrogen content. Finally, the fundamental dependence on excitation density investigated in the experiment is theoretically quantified not only for the photoluminescence intensity and but for the lifetimes, too. (orig.)

  10. Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

    NARCIS (Netherlands)

    Sammak, A.

    2012-01-01

    Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

  11. Which finite simple groups are unit groups?

    DEFF Research Database (Denmark)

    Davis, Christopher James; Occhipinti, Tommy

    2014-01-01

    We prove that if G is a finite simple group which is the unit group of a ring, then G is isomorphic to either (a) a cyclic group of order 2; (b) a cyclic group of prime order 2^k −1 for some k; or (c) a projective special linear group PSLn(F2) for some n ≥ 3. Moreover, these groups do all occur a...

  12. Group Cohesion in Experiential Growth Groups

    Science.gov (United States)

    Steen, Sam; Vasserman-Stokes, Elaina; Vannatta, Rachel

    2014-01-01

    This article explores the effect of web-based journaling on changes in group cohesion within experiential growth groups. Master's students were divided into 2 groups. Both used a web-based platform to journal after each session; however, only 1 of the groups was able to read each other's journals. Quantitative data collected before and…

  13. Kinetics and Mechanism of the Iron(II-Iron(III) Electron-Exchange Reaction in Mixed Solvent Media; Cinetique et Mecanisme de l'Echange d'Electrons entre Fer (II) et Fer (III), dans des Melanges de Solvants; Ikinetika i mekhanizm reaktsii ehlektronnogo obmena zheleza (I) - zheleza (III) v smeshannoj rastvoryayushchej srede; Cinetica y Mecanismo del Intercambio de Electrones Entre Fe{sup II} Y Fe{sup lII} en Mezclas de Disolventes

    Energy Technology Data Exchange (ETDEWEB)

    Horne, R. A. [Arthur D. Little, Inc. Cambridge, MA (United States)

    1965-10-15

    de intercambio electronico entre Fe{sup II} y Fe{sup III} a diversas temperaturas, grados de acidez y fuerzas ionicas, en soluciones de aguaacetona, agua-metanol y agua-etanol. La velocidad de reaccion disminuye apreciablemente al aumentar la concentracion de agua en el ultimo de estos sistemas, tendiendo a cero con la concentracion. La energfa de activacion del intercambio es la misma en mezclas de disolventes que en solucion acuosa. La constante dielectrica efectiva que interviene entre los reactivos sigue siendo la misma que en agua pura, incluso par a soluciones en agua-etanol bastante pobres en agua. Las mediciones espectroscopicas y del intercambio electronico reflejan las alteraciones de la composicion de la vaina de solvatacion del Fe{sup III} en disolventes mixtos. Estos resultados corroboran la teoria de que el intercambio electronico se efectua por intermedio de puentes agua. (author) [Russian] Byli izmereny udel'nye kon stanty skorosti reakcii jelektronnogo obmena Fe{sup II} - Fe{sup III} n pri razlichnyh temperaturah kislotnostjah i ionnyh silah v sredah: voda - aceton, voda - metanal i voda - jetanol. Sko rost' reakcii zametno snizhaetsja s umen'sheniem koncentracii vody v poslednej sistem i priblizhaetsja k nulju, kogda koncentracija vody priblizhaetsja k nulju. Jenergija aktivaci obmena javljaetsja toj zhe samoj v.smeshannom rastvore, kak i v vodnom rastvore. Jeffektiv naja dijelektricheskaja konstanta, kotoruju 'vidjat' reagirujushhie veshhestva, prodolzhaet byt konstantoj chistoj vody dazhe v rastvorah - jetanol, vpolne rastvorimyh v vode. Iz menenija v sostave obolochki sol'vatacii Fe{sup III} v smeshannoj srede otrazhajutsja kak v jelek tronnom obmene, tak i v spektroskopicheskih izmerenijah. Jeti vyvody, poluchennye na osnov rezul'tatov v smeshannoj rastvorjajushhej srede, podtverzhdajut teoriju vodjanogo mostika pr jelektronnom obmene. (author)

  14. Group Work Publication-1991.

    Science.gov (United States)

    Zimpfer, David G.

    1992-01-01

    Lists 21 new publications in group work, of which 9 are reviewed. Those discussed include publications on group counseling and psychotherapy, structured groups, support groups, psychodrama, and social group work. (Author/NB)

  15. Quantum isometry groups

    Indian Academy of Sciences (India)

    Jyotishman Bhowmick

    2015-11-07

    Nov 7, 2015 ... Classical. Quantum. Background. Compact Hausdorff space. Unital C∗ algebra. Gelfand-Naimark. Compact Group. Compact Quantum Group. Woronowicz. Group Action. Coaction. Woronowicz. Riemannian manifold. Spectral triple. Connes. Isometry group. Quantum Isometry Group. To be discussed.

  16. Group typicality, group loyalty and cognitive development.

    Science.gov (United States)

    Patterson, Meagan M

    2014-09-01

    Over the course of childhood, children's thinking about social groups changes in a variety of ways. Developmental Subjective Group Dynamics (DSGD) theory emphasizes children's understanding of the importance of conforming to group norms. Abrams et al.'s study, which uses DSGD theory as a framework, demonstrates the social cognitive skills underlying young elementary school children's thinking about group norms. Future research on children's thinking about groups and group norms should explore additional elements of this topic, including aspects of typicality beyond loyalty. © 2014 The British Psychological Society.

  17. AREVA group overview; Presentation du groupe AREVA

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2002-02-08

    This document presents the Group Areva, a world nuclear industry leader, from a financial holding company to an industrial group, operating in two businesses: the nuclear energy and the components. The structure and the market of the group are discussed, as the financial assets. (A.L.B.)

  18. Overgroups of root groups in classical groups

    CERN Document Server

    Aschbacher, Michael

    2016-01-01

    The author extends results of McLaughlin and Kantor on overgroups of long root subgroups and long root elements in finite classical groups. In particular he determines the maximal subgroups of this form. He also determines the maximal overgroups of short root subgroups in finite classical groups and the maximal overgroups in finite orthogonal groups of c-root subgroups.

  19. Interagency mechanical operations group numerical systems group

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-09-01

    This report consists of the minutes of the May 20-21, 1971 meeting of the Interagency Mechanical Operations Group (IMOG) Numerical Systems Group. This group looks at issues related to numerical control in the machining industry. Items discussed related to the use of CAD and CAM, EIA standards, data links, and numerical control.

  20. Theory of Lie groups

    CERN Document Server

    Chevalley, Claude

    2018-01-01

    The standard text on the subject for many years, this introductory treatment covers classical linear groups, topological groups, manifolds, analytic groups, differential calculus of Cartan, and compact Lie groups and their representations. 1946 edition.

  1. Nanoscopic diffusion studies on III-V compound semiconductor structures: Experiment and theory

    Science.gov (United States)

    Gonzalez Debs, Mariam

    The electronic structure of multilayer semiconductor heterostructures is affected by the detailed compositional profiles throughout the structure and at critical interfaces. The extent of interdiffusion across these interfaces places limits on both the processing time and temperatures for many applications based on the resultant compositional profile and associated electronic structure. Atomic and phenomenological methods were used in this work through the combination of experiment and theory to understand the nanoscopic mechanisms in complex heterostructures. Two principal studies were conducted. Tin diffusion in GaAs was studied by fitting complex experimental diffusion profiles to a phenomenological model which involved the diffusion of substitutional and interstitial dopant atoms. A methodology was developed combining both the atomistic model and the use of key features within these experimentally-obtained diffusion profiles to determine meaningful values of the transport and defect reaction rate parameters. Interdiffusion across AlSb/GaSb multi-quantum well interfaces was also studied. The chemical diffusion coefficient characterizing the AlSb/GaSb diffusion couple was quantitatively determined by fitting the observed photoluminescence (PL) peak shifts to the solution of the Schrodinger equation using a potential derived from the solution of the diffusion equation to quantify the interband transition energy shifts. First-principles calculations implementing Density Functional Theory were performed to study the thermochemistry of point defects as a function of local environment, allowing a direct comparison of interfacial and bulk diffusion phenomena within these nanoscopic structures. Significant differences were observed in the Ga and Al vacancy formation energies at the AlSb/GaSb interface when compared to bulk AlSb and GaSb with the largest change found for Al vacancies. The AlSb/GaSb structures were further studied using positron annihilation spectroscopy (PAS) to investigate the role of vacancies in the interdiffusion of Al and Ga in the superlattices. The PL and PAS experimental techniques together with the phenomenological and atomistic modeling allowed for the determination of the underlying mass transport mechanisms at the nanoscale.

  2. Advances in High-Efficiency III-V Multijunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Richard R. King

    2007-01-01

    Full Text Available The high efficiency of multijunction concentrator cells has the potential to revolutionize the cost structure of photovoltaic electricity generation. Advances in the design of metamorphic subcells to reduce carrier recombination and increase voltage, wide-band-gap tunnel junctions capable of operating at high concentration, metamorphic buffers to transition from the substrate lattice constant to that of the epitaxial subcells, concentrator cell AR coating and grid design, and integration into 3-junction cells with current-matched subcells under the terrestrial spectrum have resulted in new heights in solar cell performance. A metamorphic Ga0.44In0.56P/Ga0.92In0.08As/ Ge 3-junction solar cell from this research has reached a record 40.7% efficiency at 240 suns, under the standard reporting spectrum for terrestrial concentrator cells (AM1.5 direct, low-AOD, 24.0 W/cm2, 25∘C, and experimental lattice-matched 3-junction cells have now also achieved over 40% efficiency, with 40.1% measured at 135 suns. This metamorphic 3-junction device is the first solar cell to reach over 40% in efficiency, and has the highest solar conversion efficiency for any type of photovoltaic cell developed to date. Solar cells with more junctions offer the potential for still higher efficiencies to be reached. Four-junction cells limited by radiative recombination can reach over 58% in principle, and practical 4-junction cell efficiencies over 46% are possible with the right combination of band gaps, taking into account series resistance and gridline shadowing. Many of the optimum band gaps for maximum energy conversion can be accessed with metamorphic semiconductor materials. The lower current in cells with 4 or more junctions, resulting in lower I2R resistive power loss, is a particularly significant advantage in concentrator PV systems. Prototype 4-junction terrestrial concentrator cells have been grown by metal-organic vapor-phase epitaxy, with preliminary measured efficiency of 35.7% under the AM1.5 direct terrestrial solar spectrum at 256 suns.

  3. Calculating the Curie temperature reliably in diluted III-V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Bouzerar, G.; Ziman, T.; Kudrnovský, Josef

    2005-01-01

    Roč. 69, č. 5 (2005), s. 812-818 ISSN 0295-5075 R&D Projects: GA AV ČR(CZ) IAA1010203; GA ČR(CZ) GA202/04/0583 Institutional research plan: CEZ:AV0Z10100520 Keywords : local RPA * Curie temperaure * ab-initio * Heisenberg model * magnetic percolation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.237, year: 2005

  4. All-optical XOR logic gate using intersubband transition in III-V quantum well materials.

    Science.gov (United States)

    Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo

    2014-06-02

    A monolithically integrated all-optical exclusive-OR (XOR) logic gate is experimentally demonstrated based on a Michelson interferometer (MI) gating device in InGaAs/AlAsSb coupled double quantum wells (CDQWs). The MI arms can convert the pump data with return-to-zero ON-OFF keying (RZ OOK) to binary phase-shift keying (BPSK) format, then two BPSK signals can interfere with each other for realizing a desired logical operation. All-optical format conversion from the RZ OOK to BPSK is based on the cross-phase modulation to the transverse electric (TE) probe wave, which is caused by the intersubband transition excited by the transverse magnetic (TM) pump light. Bit error rate measurements show that error free operation for both BPSK format conversion and XOR logical operation can be achieved.

  5. InGaAs focal plane array developments at III-V Lab

    Science.gov (United States)

    Rouvié, Anne; Reverchon, Jean-Luc; Huet, Odile; Djedidi, Anis; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Bria, Toufiq; Pires, Mauricio; Decobert, Jean; Costard, Eric

    2012-06-01

    SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. For few years, III-VLab has been studying InGaAs imagery, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has lead to put quickly on the market a 320x256 InGaAs module, exhibiting high performances in terms of dark current, uniformity and quantum efficiency. In this paper, we present the last developments achieved in our laboratory, mainly focused on increasing the pixels number to VGA format associated to pixel pitch decrease (15μm) and broadening detection spectrum toward visible wavelengths. Depending on targeted applications, different Read Out Integrated Circuits (ROIC) have been used. Low noise ROIC have been developed by CEA LETI to fit the requirements of low light level imaging whereas logarithmic ROIC designed by NIT allows high dynamic imaging adapted for automotive safety.

  6. Time Resolved Studies of Carrier Dynamics in III -v Heterojunction Semiconductors.

    Science.gov (United States)

    Westland, Duncan James

    Available from UMI in association with The British Library. Requires signed TDF. Picosecond time-resolution photoluminescence spectroscopy has been used to study transient processes in Ga _{.47}In_{.53 }As/InP multiple quantum wells (MQWs), and in bulk Ga_{.47}In _{.53}As and GaSb. To facilitate the experimental studies, apparatus was constructed to allow the detection of transient luminescence with 3ps time resolution. A frequency upconversion technique was employed. Relaxation of energetic carriers in bulk Ga _{.47}In_{.53 }As by optic phonons has been investigated, and, at carrier densities ~3 times 10^{18}cm ^{-3} is found to be a considerably slower process than simple theory predicts. The discrepancy is resolved by the inclusion of a non-equilibrium population of longitudinal optic phonons in the theoretical description. Slow energy loss is also observed in a 154A MQW under similar conditions, but carriers are found to relax more quickly in a 14A MQW with a comparable repeat period. The theory of non-equilibrium mode occupation is modified to describe the case of a MQW and is found to agree with experiment. Carrier relaxation in GaSb is studied and the importance of occupation of the L _6 conduction band valley in this material is demonstrated. The ambipolar diffusion of a photoexcited carrier plasma through an InP capping layer was investigated using an optical time-of-flight technique. This experiment also enables the efficiency of carrier capture by a Ga _{.47}In_{.53 }As quantum well to be determined. A capture time of 4ps was found.

  7. Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

    Science.gov (United States)

    Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

    2018-02-01

    Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

  8. Theoretical Crystal-Field Calculations for Rare-Earth Ions in III-V semiconductor Compounds

    Science.gov (United States)

    1991-10-01

    22209 Director Director US Army Electronics Warfare Laboratory Defense Nuclear Agency Attn AMSEL-DD Attn Tech Library Attn AMSEL-DD, J. Charlton 6801...Washougal, WA 98671 Attn SLCHD-NW-TN, Chief Attn SLCHD-NW-TS, Chief Departmento Quimica Fundamental Attn SLCHD-PO, Chief Universidade Federal de

  9. Characterization of III-V nanowires for photovoltaic devices using advanced electron microscopy techniques

    DEFF Research Database (Denmark)

    Persson, Johan Mikael

    In this work, the crystal structure of epitaxially grown semiconductor nanowires has been analysed using electron microscopy and to some extent X-ray diffractometry. The goal of the EU project which this work was a part of was to build multi-junction solar cells with nanowires as the main building...... of the crystal structure at the junction. This thesis also comments on some unusual properties and _ndings of the examined nanowires: Some nanowires sported a droplet-like protrusion of the catalyst gold particle reaching into the solid center of the nanowire. This feature can be discussed in terms of nanowire...

  10. Growth and properties of low-dimensional III-V semiconductor nanowire heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Martin

    2010-08-25

    In this work the properties of GaAs nanowire based heterostructures are investigated. The nanowires and their heterostructures are synthesized with Molecular Beam Epitaxy. The optical and structural properties are characterized by means of low temperature confocal micro-photoluminescence spectroscopy and Transmission Electron Microscopy. Molecular Beam Epitaxy is a versatile technique that allows to switch from radial to axial growth in order to cap the nanowires by an epitaxial prismatic AlGaAs/GaAs heterostructure. This can passivate surface states and improve the optical properties. The effect of such a passivation layer is studied by quantitative comparison of the diameter dependence of photoluminescence in passivated and unpassivated nanowires. The passivation is an important prerequisite for more complex axial heterostructures. Evidence for radial confinement effects is found in passivated nanowires with core diameters smaller than 70 nm. Furthermore, the polarization dependence of light absorption and emission is investigated. Two different types of axial heterostructures are studied that have the potential to further enhance the functionality of such nanowires. In a first step, the possibility of growth of axial InGaAs heterostructure in the Au-free Molecular Beam Epitaxy growth regime is investigated. Suitable growth conditions are identified and the growth temperature window for both GaAs and InGaAs nanowires is determined. At the optimum growth temperature for GaAs nanowires, the incorporation of indium in the structure is limited to a few percent. It is shown that by lowering the growth temperature the indium concentration in the structure can be increased up to 20%. The optical properties of the synthesized axial heterostructures are investigated by means of micro-photoluminescence spectroscopy and Transmission Electron Microscopy. The second type of axial nanowire heterostructure investigated in the present work is characterized by a change in crystal symmetry from cubic zinc-blende to hexagonal wurtzite structure, while the chemical composition of the material remains constant. The GaAs nanowires synthesized with the Au-free technique can be grown under conditions where a statistical wurtzite/zinc-blende polytypism occurs. A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is developed in order to characterize the resulting statistically distributed quantum heterostructures. Nanowires consisting of {approx}100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are studied by photoluminescence spectroscopy and Transmission Electron Microscopy. The photoluminescence of wurtzite GaAs is found to be consistent with a bulk wurtzite band gap of 1.50 eV, slightly smaller compared to the zinc-blende GaAs band gap. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the according bulk band gaps, while regions composed of a non periodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to estimate the band offsets of {delta}E{sub CB}=53{+-}20 meV and {delta}E{sub VB}=76{+-}12 meV between the two crystalline phases. These results are in excellent agreement with recent theoretical band structure calculations. (orig.)

  11. Investigation of Current Induced Spin Polarization in III-V Semiconductor Epilayers

    Science.gov (United States)

    Luengo-Kovac, Marta

    In the development of a semiconductor spintronics device, a thorough understanding of spin dynamics in semiconductors is necessary. In particular, electrical control of electron spins is advantageous for its compatibility with present day electronics. In this thesis, we will discuss the electrical modification of the electron g-factor, which characterizes the strength of the interaction between a spin and a magnetic field, as well as investigate electrically generated spin polarizations as a function of various material parameters. We report on the modification of the electron g-factor by an in-plane electric field in an InGaAs epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to measure the g-factor independently of the spin-orbit fields. The g-factor increases from -0.4473(0.0001) at 0 V/cm to -0.4419( 0.0001) at 50 V/cm applied along the [110] crystal axis. A comparison of temperature and voltage dependent photoluminescence measurements indicate that minimal channel heating occurs at these voltages. Possible explanations for this g-factor modification are discussed, including an increase in the electron temperature that is independent of the lattice temperature and the modification of the donor-bound electron wave function by the electric field. The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InGaAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the spin polarization mechanism is extrinsic. Temperature-dependent measurements of the spin dephasing rates and mobilities were used to characterize the relative strengths of the intrinsic D'yakonov-Perel' and extrinsic Elliot-Yafet spin dephasing mechanisms. Proposed spin polarization mechanisms are discussed and compared with the experimental results.

  12. A new standardless quantitative electron probe microanalysis technique applied to III-V compound semiconductors

    International Nuclear Information System (INIS)

    Zangalis, K.P.; Christou, A.

    1982-01-01

    The present paper introduces a new standardless quantitative scheme for off-line electron microprobe analysis applications. The analysis is based on standard equations of the type Isub(i)=Csub(i)fsub(ZAF)βsub(i) and is specifically suitable for compound semiconductors. The roots to the resultant nth-degree polynomial are the unknown concentrations. Methods for computing Csub(i) when coefficients βsub(i) are unknown are also outlined. Applications of standardless analysis to GaAs and InP specimens are compared with results obtained by Auger electron spectroscopy and quantitative electron probe analysis with standards. (Auth.)

  13. Charge transport in non-polar and semi-polar III-V nitride heterostructures

    International Nuclear Information System (INIS)

    Konar, Aniruddha; Verma, Amit; Fang, Tian; Zhao, Pei; Jana, Raj; Jena, Debdeep

    2012-01-01

    Compared to the intense research focus on the optical properties, the transport properties in non-polar and semi-polar III-nitride semiconductors remain relatively unexplored to date. The purpose of this paper is to discuss charge-transport properties in non-polar and semi-polar orientations of GaN in a comparative fashion to what is known for transport in polar orientations. A comprehensive approach is adopted, starting from an investigation of the differences in the electronic bandstructure along different polar orientations of GaN. The polarization fields along various orientations are then discussed, followed by the low-field electron and hole mobilities. A number of scattering mechanisms that are specific to non-polar and semi-polar GaN heterostructures are identified, and their effects are evaluated. Many of these scattering mechanisms originate due to the coupling of polarization with disorder and defects in various incarnations depending on the crystal orientation. The effect of polarization orientation on carrier injection into quantum-well light-emitting diodes is discussed. This paper ends with a discussion of orientation-dependent high-field charge-transport properties including velocity saturation, instabilities and tunneling transport. Possible open problems and opportunities are also discussed. (paper)

  14. Bismuth containing III-V quaternary alloy InGaAsBi grown by MBE

    International Nuclear Information System (INIS)

    Feng, G.; Oe, K.; Yoshimoto, M.

    2006-01-01

    InGaAsBi epilayers were created on InP substrates by molecular beam epitaxy for the first time. The high crystalline quality of the InGaAsBi epilayer with smooth interface was confirmed by high resolution X-ray diffraction measurements. Up to 2.5% Bi was incorporated in the film based on Rutherford back scattering (RBS) results. The RBS channeling spectra give clear evidence that the Bi atoms were substitutionally located in the InGaAs zinc-blende lattice sites. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  15. Molecular beam epitaxy of Cd3As2 on a III-V substrate

    Directory of Open Access Journals (Sweden)

    Timo Schumann

    2016-12-01

    Full Text Available Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C, in situ, on (111 GaSb buffer layers deposited on (111 GaAs substrates. The orientation relationship is described by ( 112 Cd 3 As 2 || (111 GaSb and [ 1 1 ¯ 0 ] Cd 3 As 2 || [ 1 ¯ 01 ] GaSb . The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

  16. Discrimination of defects in III-V semiconductors by positron lifetime distribution

    CERN Document Server

    Chen, Z Q; Wang, S J

    2000-01-01

    In this paper, the numerical Laplace inversion technique and maximum entropy method are utilized to extract continuous positron lifetime distribution in semiconductors. The result is used to discriminate the native vacancy-type defects in as-grown GaAs and In P with different conduction type. Direct evidence of shallow positron traps were also observed in ion-implanted p-In P. It is demonstrated that the lifetime distribution can give us more detailed information on the native defects.

  17. Theoretical modeling of a new structure of III-V tandem solar cells by ...

    African Journals Online (AJOL)

    junction solar cell is theoretically investigated by optimizing the thickness of GaAs and GaInPandusing a new optical model to separate the junction between the two solar cell in order to solve problems of tunnel junction and difficulties of fabrication.

  18. Structure of disordered alloys - II: self-consistent CCPA calculations for III-V semiconducting alloys

    International Nuclear Information System (INIS)

    Mookerjee, A.; Chaudhry, V.

    1980-09-01

    Using the chemical pseudopotential approach of Anderson and Bullett we have generated from first principles pseudo-Hamiltonians for heteropolar alloys. The one-electron density of states has been generated for Gasub(x)Insub(1-x)As using a self-consistent cluster CPA introduced earlier by one of us. Off-diagonal disorder has also been incorporated. (author)

  19. Optical characterisation of III-V nitride-based multiphase and diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Wegscheider, M.

    2009-01-01

    The present work is devoted to the investigation of the optical properties of transition metal doped Gallium nitride. The Gallium nitride layers are epitaxially grown in a full metalorganic chemical vapour deposition process whereas the transition metals iron or manganese as well as the n and p-type dopants silicon and magnesium are incorporated simultaneously. Background and driving force of the realization of such material systems is basically the evocation of ferromagnetic spin alignment where free carriers ensure the correspondence between the localized spin state provided by the metal ions. The production of completely new devices for semiconductor industries based on the possibility to switch on or off the ferrimagnetic alignment by changing the free carrier concentration can be expected in the near future. In this context photoluminescence studies in the ultraviolet and mid infrared spectral range at temperatures between the liquid helium point and room temperature at atmospheric pressure were made. These measurements basically provide information on optical transitions between the conduction and valence band and deep defects as well as on crystal field forced transitions within the d-orbitals of the metal ion involved. In this context valuable knowledge could have been gained on doping concentrations, growth fashions and parameters, formation of secondary phases as well as on the doping efficiency and incorporation sites of the metal atoms. (author) [de

  20. Temperature dependence Infrared and Raman studies of III-V/II-VI core-shell nanostructures

    Science.gov (United States)

    Manciu, Felicia S.; McCombe, Bruce D.; Lucey, Derrick

    2005-03-01

    The temperature dependence (8 K InP/ZnS sample. Raman scattering (457.9 nm excitation) features were determined without polarization selection in the backscattering geometry. Interesting T-dependent resonant Raman effect of the surface optical phonon modes has been discovered in InP/ZnSe sample. Reasonable agreement is obtained between the Raman and FIR results, as well as with theoretical calculations.

  1. Improved Ion Resistance for III-V Photocathodes in High Current Guns

    Energy Technology Data Exchange (ETDEWEB)

    Mulhollan, Gregory, A.

    2012-11-16

    The two photocathode test systems were modified, baked and recommissioned. The first system was dedicated to ion studies and the second to electron stimulated recovery (ESR) work. The demonstration system for the electron beam rejuvenation was set up, tested and demonstrated to one of the SSRL team (Dr. Kirby) during a site visit. The requisite subsystems were transferred to SSRL, installed and photoemission studies conducted on activated surfaces following electron beam exposure. Little surface chemistry change was detected in the photoemission spectra following the ESR process. The yield mapping system for the ion (and later, the electron beam rejuvenation) studies was implemented and use made routine. Ion species and flux measurements were performed for H, He, Ne, Ar, Kr and Xe ions at energies of 0.5, 1.0 and 2.0 kV. Gas induced photoyield measurements followed each ion exposure measurement. These data permit the extraction of photoyield induced change per ion (by species) at the measured energies. Electron beam induced rejuvenation was first demonstrated in the second chamber with primary electron beam energy and dependency investigations following. A Hiden quadrupole mass spectrometer for the electron stimulated desorption (ESD) measurements was procured. The UHV test systems needed for subsequent measurements were configured, baked, commissioned and utilized for their intended purposes. Measurements characterizing the desorption products from the ESD process and secondary electron (SE) yield at the surfaces of negative electron affinity GaAs photocathodes have been performed. One US Utility Patent was granted covering the ESR process.

  2. Atomic scale study of intrinsic and Mn doped quantum dots in III-V semiconductors

    NARCIS (Netherlands)

    Bozkurt, M.

    2011-01-01

    In this thesis, a Cross Sectional Scanning Tunneling Microscope (X-STM) is used to investigate nanostructures in IIIV semiconductors and single Mn impurities in bulk GaAs. The atomic resolution which can be achieved with X-STM makes it possible to link structural properties of nanostructures to

  3. Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

    Science.gov (United States)

    Alterovitz, Samuel A.; Sekula-Moise, Patricia A.; Sieg, Robert M.; Drotos, Mark N.; Bogner, Nancy A.

    1992-01-01

    An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

  4. Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires

    International Nuclear Information System (INIS)

    Estevez Hernandez, Sergio

    2009-01-01

    Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e 2 /h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties of gated InN, InAs and GaAs/AlGaAs nanowires were investigated. Magnetic field-dependent as well as gate-dependent measurements of universal conductance fluctuations were performed to gain information on the phase coherence in the electron transport. In this work was found a pronounced decrease in the variance of the conductance by about a factor of 2 in gate-dependent fluctuation measurements if a magnetic field is applied. This effect is explained by the suppression of the Cooperon channel of the electron correlation contributing to the conductance fluctuations. Despite the fact that the diameter of the nanowire is less than 100 nm a clear weak antilocalization effect is found in the averaged magnetoconductance being in strong contrast to the suppression of weak antilocalization for narrow quantum wires based on planar two-dimensional electron gases. The unexpected robustness of the weak antilocalization effect observed here is attributed to the tubular topology of the surface electron gas in InN and InAs nanowires. (orig.)

  5. Modulation doping and delta doping of III-V compound semiconductors

    NARCIS (Netherlands)

    Hendriks, P.; Zwaal, E.A.E.; Haverkort, J.E.M.; Wolter, J.H.; Razeghi, M.

    1991-01-01

    The transport properties of the 2D electron gas produced by modulation doping of compound semiconductors are reviewed with attention given to the properties at high electric fields. Experimental studies are discussed in which the transport properties lead to insights into current instabilities and

  6. A model of gettering effects of rare-earth elements in III-V compounds

    Czech Academy of Sciences Publication Activity Database

    Šrobár, Fedor; Procházková, Olga

    2006-01-01

    Roč. 100, č. 8 (2006), s. 643-- ISSN 0009-2770. [Sjezd chemických společností /58./. Ústí nad Labem, 04.09.2006-08.09.2006] R&D Projects: GA ČR(CZ) GA102/06/0153 Institutional research plan: CEZ:AV0Z20670512 Keywords : semiconductor technology * rare earth metals * getters Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.431, year: 2006

  7. Study and characterization of III-V semiconductor materials for applications in ionizing radiation detection

    International Nuclear Information System (INIS)

    Moulin, H.

    1989-11-01

    The photoconduction in the bulk of the gallium arsenide (GaAs) and of the indium phosphide doped with iron (InP:Fe) is investigated. These semiconductor materials are to be applied in X rays detection. The photoconduction theory and the physical characteristics of those materials are reviewed. The computer simulation models for studying the photoconductor responses to the radiation pulses are described. The experimental results are discussed. They include the following aspects: the characterization of the GaAs and InP:Fe, in the obscurity, as a function of the polarized electric field and of the neutrons dose; the characterization under X ray. Continuous X rays and pulsed synchrotron radiation are applied [fr

  8. Growth and characterization of GaAs-GaSb III-V pseudo-binary nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Schamp, C.T. [Cerium Laboratories, Austin, TX 78741 (United States); Jesser, W.A. [Department of Materials Science and Engineering, 116 Engineer' s Way, University of Virginia, Charlottesville, VA 22904 (United States)

    2008-07-01

    The GaAs-GaSb pseudo-binary materials system presents an interesting challenge for growth because of 1) the existence of a miscibility gap in the solid-solid portion of the equilibrium phase diagram, and 2) the large differences in vapor pressure between the column III element, Ga, and the column V elements, As and Sb. To overcome these challenges in the growth of GaAs, GaSb, and Ga{sub 50}As{sub x}Sb{sub 50-x} alloy nanoparticles, single- and dual-target pulsed laser deposition (PLD) techniques were implemented using an Nd:YAG laser operated with a harmonic generator to utilize the second harmonic wavelength (532 nm) and a combination of the fundamental and the second harmonic wavelengths (1064 nm+532 nm). The nanoparticles were collected on amorphous carbon films for subsequent characterization by transmission electron microscopy. The analysis shows that single phase GaAs-rich Ga{sub 50}As{sub x}Sb{sub 50-x} (28>x>50) nanoparticles and nanocrystalline films have been formed through dual-target, single-wavelength (532 nm) pulsed laser ablation. Interestingly, through the ablation of the single component targets, two-phase particles were also found to form. These two phase particles resemble ''nano-ice cream cones'' with solid cones of either GaAs or GaSb with a spherical ''ice cream'' ball of Ga located at the wide portion of the cone, which is either an amorphous phase or liquid phase. Through an analysis by STEM-EDX spectroscopy, these particles are found to be consistant with this model. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum dots are nanoscale materials that have already improved the performance of optical sensors, lasers, and light emitting diodes. The unique properties of these...

  10. High Efficiency Quantum Dot III-V Thermophotovoltaic Cell for Space Power, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum dots are nanoscale materials that have already improved the performance of optical sensors, lasers, light emitting diodes and solar cells. The unique...

  11. Silicon-photonics light source realized by III-V/Si grating-mirror laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared...... to existing silicon light sources....

  12. Investigation of proton damage in III-V semiconductors by optical spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Yaccuzzi, E.; Giudici, P. [Departamento Energía Solar, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Khachadorian, S.; Strittmatter, A.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Suárez, S. [Laboratorio de Colisiones Atómicas, Centro Atómico Bariloche, E. Bustillo 9500, 8400 Bariloche (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Reinoso, M. [Departamento Física Experimental, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Goñi, A. R. [ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra (Spain)

    2016-06-21

    We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase in the intensity of longitudinal optical phonons and a decrease in the luminescence were observed. We associate these changes with the creation of defects in the damaged region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with stopping and range of ions in matter simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20% for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation, we propose an increase in 40% in the electronic stopping power for InGaP.

  13. Modeling Three-Terminal III-V/Si Tandem Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Warren, Emily L.; Deceglie, Michael G.; Stradins, Paul; Tamboli, Adele C.

    2017-06-27

    Three-terminal (3T) tandem cells fabricated by combining an interdigitated back contact (IBC) Si device with a wider bandgap top cell have the potential to provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects between cells. Here we develop a two dimensional device physics model to study the behavior of IBC Si solar cells operated in a 3T configuration. We investigate how different cell designs impact device performance and discuss the analysis protocol used to understand and optimize power produced from a single junction, 3T device.

  14. Cutoff-mesa isolated rib optical waveguide for III-V heterostructure photonic integrated circuits

    Science.gov (United States)

    Vawter, G.A.; Smith, R.E.

    1998-04-28

    A cutoff mesa rib waveguide provides single-mode performance regardless of any deep etches that might be used for electrical isolation between integrated electrooptic devices. Utilizing a principle of a cutoff slab waveguide with an asymmetrical refractive index profile, single mode operation is achievable with a wide range of rib widths and does not require demanding etch depth tolerances. This new waveguide design eliminates reflection effects, or self-interference, commonly seen when conventional rib waveguides are combined with deep isolation etches and thereby reduces high order mode propagation and crosstalk compared to the conventional rib waveguides. 7 figs.

  15. Growth and Characterization of III-V Semiconductors for Device Applications

    Science.gov (United States)

    Williams, Michael D.

    2000-01-01

    The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

  16. Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases

    International Nuclear Information System (INIS)

    Moses, A. F.; Hoang, T. B.; Ahtapodov, L.; Dheeraj, D. L.; Fimland, B. O.; Weman, H.; Helvoort, A. T. J. van

    2011-01-01

    Low temperature (10 K) micro-photoluminescence (μ-PL) of single GaAs/AlGaAs core-shell nanowires with single GaAsSb inserts were measured. The PL emission from the zinc blende GaAsSb insert is strongly polarized along the nanowire axis while the PL emission from the wurtzite GaAs nanowire is perpendiculary polarized to the nanowire axis. The result indicates that the crystal phase, through the optical selection rules, has significant effect on the polarization of the PL from NWs besides the dielectric mismatch. The analysis of the PL results based on the electronic structure of these nanowires supports the correlation between the crystal phase and the PL emission.

  17. Electron scattering by native defects in III-V nitrides and their alloys

    International Nuclear Information System (INIS)

    Hsu, L.; Walukiewicz, W.

    1996-03-01

    We have calculated the electron mobilities in GaN and InN taking into consideration scattering by short range potentials, in addition to all standard scattering mechanisms. These potentials are produced by the native defects which are responsible for the high electron concentrations in nominally undoped nitrides. Comparison of the calculated mobilities with experimental data shows that scattering by short range potentials is the dominant mechanism limiting the electron mobilities in unintentionally doped nitrides with large electron concentrations. In the case of Al x Ga 1-x N alloys, the reduction in the electron concentration due to the upward shift of the conduction band relative to the native defect level can account for the experimentally measured mobilities. Resonant scattering is shown to be important when the defect and Fermi levels are close in energy

  18. Polarization dependent femtosecond laser modification of MBE-grown III-V nanostructures on silicon

    OpenAIRE

    Zandbergen, Sander R.; Gibson, Ricky; Amirsolaimani, Babak; Mehravar, Soroush; Keiffer, Patrick; Azarm, Ali; Kieu, Khanh

    2017-01-01

    We report a novel, polarization dependent, femtosecond laser-induced modification of surface nanostructures of indium, gallium, and arsenic grown on silicon via molecular beam epitaxy, yielding shape control from linear and circular polarization of laser excitation. Linear polarization causes an elongation effect, beyond the dimensions of the unexposed nanostructures, ranging from 88 nm to over 1 um, and circular polarization causes the nanostructures to flatten out or form loops of material,...

  19. The influence of nitrogen on the photoluminescence of metastable III-V nitrides

    International Nuclear Information System (INIS)

    Hantke, K.

    2005-01-01

    The work presented here mainly summarizes experimental and theoretical results enlightening the material-specific, optical properties of (GaIn)(NAs). The primarily used experiment is the time-resolved photoluminescence spectroscopy. The comparison of experiment and theory yields a simple exponential form for the density of localized states. Furthermore it can be confirmed that the typical energy scale of the localization is diminished by the annealing step as well as by the hydrogenation process. In a next step, the investigation of (GaIn)(NAs) epitactical layers, that were optimized for solar cell application, reveals astonishing features: The minority-carrier diffusion-length of the p-doped layers is found to be slightly higher than for the n-doped material implying that (GaIn)(NAs) solar cells with a p-on-n structure should be preferred in terms of higher quantum efficiency. A new effect found during the investigations is the optimization of the internal quantum efficiency of the (GaIn)(NAs) structures after irradiation with intensive laser light attributed to the laser-induced annealing of defects. The final paragraph concentrates on the successful comparison of time-resolved photoluminescence, photo-modulated reflection measurements and a microscopic many-body theory. A profound understanding of the type-I type-II transition in (GaIn)As/Ga(NAs) heterostructures is achieved resulting in material-specific information as e.g. the temperature-dependent bandgap energies, the band offsets in Ga(NAs)/GaAs and (GaIn)As/Ga(NAs) respectively, as well as the interaction potential VN dependent on the nitrogen content. Finally, the fundamental dependence on excitation density investigated in the experiment is theoretically quantified not only for the photoluminescence intensity and but for the lifetimes, too. (orig.)

  20. Determination of stress distribution in III-V single crystal layers for heterogeneous integration applications

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, M.; Hayashi, S. [Dept. of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Goorsky, M.S.; Sandhu, R.; Chang-Chien, P.; Gutierrez-Aitken, A.; Tsai, R. [Northrop Grumman Space Technology, Redondo Beach, CA 90278 (United States); Noori, A.; Poust, B. [Dept. of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Northrop Grumman Space Technology, Redondo Beach, CA 90278 (United States)

    2007-08-15

    Double crystal X-ray diffraction imaging and a variable temperature stage are employed to determine the stress distribution in heterogeneous wafer bonded layers though the superposition of images produced at different rocking curve angles. The stress distribution in InP layers transferred to a silicon substrate at room temperature exhibits an anticlastic deformation, with different regions of the wafer experiencing different signs of curvature. Measurements at elevated temperatures ({<=}125 C) reveals that differences in thermal expansion coefficients dominate the stress and that interfacial particulates introduce very high local stress gradients that increase with increased temperature. For thinned GaAs substrates (100 {mu}m) bonded using patterned metal interlayers to a separate GaAs substrate at {approx}200 C, residual stresses are produced at room temperature due to local stress points from metallization contacts and vias and the complex stress patterns can be observed using the diffraction imaging technique. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Introduction to Sporadic Groups

    Directory of Open Access Journals (Sweden)

    Luis J. Boya

    2011-01-01

    Full Text Available This is an introduction to finite simple groups, in particular sporadic groups, intended for physicists. After a short review of group theory, we enumerate the 1+1+16=18 families of finite simple groups, as an introduction to the sporadic groups. These are described next, in three levels of increasing complexity, plus the six isolated ''pariah'' groups. The (old five Mathieu groups make up the first, smallest order level. The seven groups related to the Leech lattice, including the three Conway groups, constitute the second level. The third and highest level contains the Monster group M, plus seven other related groups. Next a brief mention is made of the remaining six pariah groups, thus completing the 5+7+8+6=26 sporadic groups. The review ends up with a brief discussion of a few of physical applications of finite groups in physics, including a couple of recent examples which use sporadic groups.

  2. Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering.

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-02-15

    ITO nanowires have been successfully fabricated using a radio-frequency sputtering technique with a high RF-power of 250W. The fabrication of the ITO nanowires has been optimized through the study of oxygen flow rates, temperatures and RF-power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target has been first observed and the mechanism for the difference has been discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method has demonstrated good conductivity (15Ω/sq) and a transmittance of more than 64% at a wavelength longer than 550nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices. © 2018 IOP Publishing Ltd.

  3. Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-04-01

    Tin-doped indium oxide (ITO) nanowires are successfully fabricated using a radio frequency (RF) sputtering technique with a high RF power of 250 W. The fabrication of the ITO nanowires is optimized through the study of oxygen flow rates, temperatures and RF power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target is observed and the mechanism for the difference is discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method demonstrated good conductivity (15 Ω sq-1) and a transmittance of more than 64% at a wavelength longer than 550 nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices.

  4. A novel self-catalyzed photoATRP strategy for preparation of fluorescent hydroxyapatite nanoparticles and their biological imaging

    Science.gov (United States)

    Jiang, Ruming; Liu, Meiying; Huang, Hongye; Huang, Long; Huang, Qiang; Wen, Yuanqing; Cao, Qian-yong; Tian, Jianwen; Zhang, Xiaoyong; Wei, Yen

    2018-03-01

    Hydroxyapatite (HAp), as an important biomaterial for the regeneration and reconstruction of bone tissue, has attracted more and more attention of researchers and scientists due to its unique structure and compositions. However, the preparation of fluorescent HAp with controllable morphology has achieved only limited success. In this work, we reported a novel strategy to construct the water dispersible fluorescent HAp nanorods via the combination of ligand exchange and metal-free atom transfer radical polymerization (ATRP). The Br-containing fluorescent HAp nanorods with controllable size and morphology were first prepared through hydrothermal treatment. A multifunctional organic molecule (named as PTH-Br) with aggregation-induced emission feature was immobilized on the surface of hydrophobic HAp nanorods through ligand exchange reaction. The PTH-Br could be used as the initiator and catalyst for surface-initiated metal-free ATRP using poly(ethylene glycol) methacrylate as monomer to obtain hydrophilic fluorescent HAp polymer nanoparticles. This strategy successfully endowed HAp nanorods excellent fluorescence properties and favorable water dispersibility but well preserved their regular morphology. Biological assays demonstrated that the HAp-PTH-poly(PEGMA) nanoparticles exhibited good biocompatibility and efficient cell uptake performance. Taken together, we have developed a rather facile strategy based on the surface ligand exchange reaction and metal-free photoATRP to fabricate fluorescent HAp with controllable size and morphology, high water dispersibility and biological properties. These HAp-PTH-poly(PEGMA) nanoparticles should be novel and promising candidates for biomedical applications.

  5. Self-Catalyzed Growth of Axial GaAs/GaAsSb Nanowires by Molecular Beam Epitaxy for Photodetectors

    Science.gov (United States)

    2015-06-01

    MOVPE Metal organic vapor phase epitaxy NCA Nano Channel Aluminum NW Nanowire PL Photoluminescence PMMA Poly methyl methacrylate...GaAs (111) B substrate. The NWs were grown using a nanochannel alumina ( NCA ) template. It was later shown by Dubrovskii et al. [16], that the NWs... cathode gun. The type of signals produced are secondary electron (SE), back scattered electron (BSE), characteristic X- rays, specimen current and

  6. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays

    DEFF Research Database (Denmark)

    Ren, Dingding; Dheeraj, Dasa L.; Jin, Chengjun

    2016-01-01

    and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses...

  7. Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Galopin, E; Largeau, L; Patriarche, G; Travers, L; Glas, F; Harmand, J C

    2011-01-01

    GaN nanowires are synthesized by plasma-assisted molecular beam epitaxy on Si(111) substrates. The strong impact of the cell orientation relative to the substrate on the nanowire morphology is shown. To study the kinetics of growth, thin AlN markers are introduced periodically during NW growth. These markers are observed in single nanowires by transmission electron microscopy, giving access to the chronology of the nanowire formation and to the time evolution of the nanowire morphology. A long delay precedes the beginning of nanowire formation. Then, their elongation proceeds at a constant rate. Later, shells develop on the side-wall facets by ascending growth of layer bunches which first agglomerate at the nanowire foot.

  8. Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy

    Science.gov (United States)

    Sharma, Manish; Deshmukh, Prithviraj; Kasanaboina, Pavan; Reynolds, C. Lewis, Jr.; Liu, Yang; Iyer, Shanthi

    2017-12-01

    Bandgap reduction of 10% by incorporation of a dilute amount of N is reported for the first time, in axial GaAsSb nanowires (NWs) grown on Si (111) via Ga-assisted molecular beam epitaxy. Impact of N incorporation on the surface morphology, NW growth kinetics, and their structural and optical properties were examined. Dilute nitride NWs with Sb composition of 7 at% did not exhibit any noticeable planar defects, as revealed by the absence of satellite twin peaks in the selected-area diffraction pattern and high-resolution transmission electron microscopy imaging. Point defects were also minimal in as-grown dilute nitride NWs, as ascertained from the comparison of low-temperature photoluminescence spectra as well as the shape and shift of Raman modes, with in situ annealed NWs in different ambients. Evidence of enhanced incorporation of N was found in the NWs in situ annealed in N ambient, but with deteriorated optical quality due to simultaneous creation of N-induced defects. The lack of any noticeable defects in the as-grown GaAsSbN NWs demonstrates the advantage of the vapor-liquid-solid mechanism responsible for growth of axial configuration over the vapor-solid growth mechanism for core-shell NWs as well as their thin film counterpart, which commonly exhibit N-induced point defects.

  9. Group Work: How to Use Groups Effectively

    Science.gov (United States)

    Burke, Alison

    2011-01-01

    Many students cringe and groan when told that they will need to work in a group. However, group work has been found to be good for students and good for teachers. Employers want college graduates to have developed teamwork skills. Additionally, students who participate in collaborative learning get better grades, are more satisfied with their…

  10. Free Boolean Topological Groups

    Directory of Open Access Journals (Sweden)

    Ol’ga Sipacheva

    2015-11-01

    Full Text Available Known and new results on free Boolean topological groups are collected. An account of the properties that these groups share with free or free Abelian topological groups and properties specific to free Boolean groups is given. Special emphasis is placed on the application of set-theoretic methods to the study of Boolean topological groups.

  11. Small Group Research

    Science.gov (United States)

    McGrath, Joseph E.

    1978-01-01

    Summarizes research on small group processes by giving a comprehensive account of the types of variables primarily studied in the laboratory. These include group structure, group composition, group size, and group relations. Considers effects of power, leadership, conformity to social norms, and role relationships. (Author/AV)

  12. Geometric group theory

    CERN Document Server

    Druţu, Cornelia

    2018-01-01

    The key idea in geometric group theory is to study infinite groups by endowing them with a metric and treating them as geometric spaces. This applies to many groups naturally appearing in topology, geometry, and algebra, such as fundamental groups of manifolds, groups of matrices with integer coefficients, etc. The primary focus of this book is to cover the foundations of geometric group theory, including coarse topology, ultralimits and asymptotic cones, hyperbolic groups, isoperimetric inequalities, growth of groups, amenability, Kazhdan's Property (T) and the Haagerup property, as well as their characterizations in terms of group actions on median spaces and spaces with walls. The book contains proofs of several fundamental results of geometric group theory, such as Gromov's theorem on groups of polynomial growth, Tits's alternative, Stallings's theorem on ends of groups, Dunwoody's accessibility theorem, the Mostow Rigidity Theorem, and quasiisometric rigidity theorems of Tukia and Schwartz. This is the f...

  13. Profinite graphs and groups

    CERN Document Server

    Ribes, Luis

    2017-01-01

    This book offers a detailed introduction to graph theoretic methods in profinite groups and applications to abstract groups. It is the first to provide a comprehensive treatment of the subject. The author begins by carefully developing relevant notions in topology, profinite groups and homology, including free products of profinite groups, cohomological methods in profinite groups, and fixed points of automorphisms of free pro-p groups. The final part of the book is dedicated to applications of the profinite theory to abstract groups, with sections on finitely generated subgroups of free groups, separability conditions in free and amalgamated products, and algorithms in free groups and finite monoids. Profinite Graphs and Groups will appeal to students and researchers interested in profinite groups, geometric group theory, graphs and connections with the theory of formal languages. A complete reference on the subject, the book includes historical and bibliographical notes as well as a discussion of open quest...

  14. Group purchasing: an overview.

    Science.gov (United States)

    Wetrich, J G

    1987-07-01

    The various types and operational methods of purchasing groups are described, and evaluation of groups is discussed. Since group purchasing is increasing in popularity as a method of controlling drug costs, community and hospital pharmacy managers may need to evaluate various groups to determine the appropriateness of their services. Groups are categorized as independent, system based, or alliance or association based. Instead of "purchasing," some groups develop contracts for hospitals, which then purchase directly from the vendor. Aside from this basic difference between groups that purchase and groups that contract, comparisons among groups are difficult because of the wide variation in sizes and services. Competition developing from diversification among groups has led to "super groups," formed from local and regional groups. In evaluating groups, advantages and disadvantages germane to accomplishing the member's objectives must be considered. To ensure a group's success, members must be committed and support the group's philosophies; hospital pharmacists must help to establish a strong formulary system. To select vendors, groups should develop formal qualification and selection criteria and should not base a decision solely on price. The method of solicitation (bidding or negotiating), as well as the role of the prime vendor, should be studied. Legal implications of group purchasing, especially in the areas of administrative fees and drug diversion, must also be considered. The most advantageous group for each organization will include members with common missions and will be able to implement strategies for future success.

  15. Ordered groups and infinite permutation groups

    CERN Document Server

    1996-01-01

    The subjects of ordered groups and of infinite permutation groups have long en­ joyed a symbiotic relationship. Although the two subjects come from very different sources, they have in certain ways come together, and each has derived considerable benefit from the other. My own personal contact with this interaction began in 1961. I had done Ph. D. work on sequence convergence in totally ordered groups under the direction of Paul Conrad. In the process, I had encountered "pseudo-convergent" sequences in an ordered group G, which are like Cauchy sequences, except that the differences be­ tween terms of large index approach not 0 but a convex subgroup G of G. If G is normal, then such sequences are conveniently described as Cauchy sequences in the quotient ordered group GIG. If G is not normal, of course GIG has no group structure, though it is still a totally ordered set. The best that can be said is that the elements of G permute GIG in an order-preserving fashion. In independent investigations around that t...

  16. ALIGNMENTS OF GROUP GALAXIES WITH NEIGHBORING GROUPS

    International Nuclear Information System (INIS)

    Wang Yougang; Chen Xuelei; Park, Changbom; Yang Xiaohu; Choi, Yun-Young

    2009-01-01

    Using a sample of galaxy groups found in the Sloan Digital Sky Survey Data Release 4, we measure the following four types of alignment signals: (1) the alignment between the distributions of the satellites of each group relative to the direction of the nearest neighbor group (NNG); (2) the alignment between the major axis direction of the central galaxy of the host group (HG) and the direction of the NNG; (3) the alignment between the major axes of the central galaxies of the HG and the NNG; and (4) the alignment between the major axes of the satellites of the HG and the direction of the NNG. We find strong signal of alignment between the satellite distribution and the orientation of central galaxy relative to the direction of the NNG, even when the NNG is located beyond 3r vir of the host group. The major axis of the central galaxy of the HG is aligned with the direction of the NNG. The alignment signals are more prominent for groups that are more massive and with early-type central galaxies. We also find that there is a preference for the two major axes of the central galaxies of the HG and NNG to be parallel for the system with both early central galaxies, however, not for the systems with both late-type central galaxies. For the orientation of satellite galaxies, we do not find any significant alignment signals relative to the direction of the NNG. From these four types of alignment measurements, we conclude that the large-scale environment traced by the nearby group affects primarily the shape of the host dark matter halo, and hence also affects the distribution of satellite galaxies and the orientation of central galaxies. In addition, the NNG directly affects the distribution of the satellite galaxies by inducing asymmetric alignment signals, and the NNG at very small separation may also contribute a second-order impact on the orientation of the central galaxy in the HG.

  17. Citizens' action group

    International Nuclear Information System (INIS)

    Andritzky, W.

    1978-01-01

    For the first empirical study of citizens' action groups 331 such groups were consulted. Important information was collected on the following aspects of these groups: their self-image, areas and forms of activities, objectives and their extent, how long the group has existed, successes and failures and their forms of organisation. (orig.) [de

  18. Brainstem auditory evoked response characteristics in normal-hearing subjects with chronic tinnitus and in non-tinnitus group

    Directory of Open Access Journals (Sweden)

    Shadman Nemati

    2014-06-01

    Full Text Available Background and Aim: While most of the people with tinnitus have some degrees of hearing impairment, a small percent of patients admitted to ear, nose and throat clinics or hearing evaluation centers are those who complain of tinnitus despite having normal hearing thresholds. This study was performed to better understanding of the reasons of probable causes of tinnitus and to investigate possible changes in the auditory brainstem function in normal-hearing patients with chronic tinnitus.Methods: In this comparative cross-sectional, descriptive and analytic study, 52 ears (26 with and 26 without tinnitus were examined. Components of the auditory brainstem response (ABR including wave latencies and wave amplitudes were determined in the two groups and analyzed using appropriate statistical methods.Results: The mean differences between the absolute latencies of waves I, III and V was less than 0.1 ms between the two groups that was not statistically significant. Also, the interpeak latency values of waves I-III, III-V and I-V in both groups had no significant difference. Only, the V/I amplitude ratio in the tinnitus group was significantly higher (p=0.04.Conclusion: The changes observed in amplitude of waves, especially in the latter ones, can be considered as an indication of plastic changes in neuronal activity and its possible role in generation of tinnitus in normal-hearing patients.

  19. Communication in Organizational Groups

    OpenAIRE

    Monica RADU

    2007-01-01

    Organizational group can be defined as some persons between who exist interactive connections (functional, communication, affective, normative type). Classification of these groups can reflect the dimension, type of relationship or type of rules included. Organizational groups and their influence over the individual efficiency and the efficiency of the entire group are interconnected. Spontaneous roles in these groups sustain the structure of the relationship, and the personality of each indi...

  20. [Social crisis, spontaneous groups and group order].

    Science.gov (United States)

    Edelman, Lucila; Kordon, Diana

    2002-12-01

    Argentina has gone through very difficult times during the last years and, in particularly, new kinds of social practices have emerged in order to cope with the crisis. This situation demands and urges a new type of reflection upon the double role of groups, as tools to transform reality and as a way to elaborate those processes regarding subjectivity. In this paper we analyse some topics regarding the groupal field (considering spontaneous groups as well as groupal devices that allow to elaborate the crisis). We consider social bond to be the condition of possibility for the existence of the psyche and of time continuity, and that it also makes possible personal and social elaboration of trauma, crisis and social catastrophe. We develop some aspects of an specific device (the reflection group), which we have already depicted in another moment, showing it's usefulness to cope with social crisis and to promote the subjective elaboration of crisis.

  1. Introduction to topological groups

    CERN Document Server

    Husain, Taqdir

    2018-01-01

    Concise treatment covers semitopological groups, locally compact groups, Harr measure, and duality theory and some of its applications. The volume concludes with a chapter that introduces Banach algebras. 1966 edition.

  2. MSUD Family Support Group

    Science.gov (United States)

    ... The Treatment Of MSUD The MSUD Family Support Group has provided funds to Buck Institute for its ... of the membership of the MSUD Family Support Group, research for improved treatments and potential cure was ...

  3. Nilpotent -local finite groups

    Science.gov (United States)

    Cantarero, José; Scherer, Jérôme; Viruel, Antonio

    2014-10-01

    We provide characterizations of -nilpotency for fusion systems and -local finite groups that are inspired by known result for finite groups. In particular, we generalize criteria by Atiyah, Brunetti, Frobenius, Quillen, Stammbach and Tate.

  4. UPIN Group File

    Data.gov (United States)

    U.S. Department of Health & Human Services — The Group Unique Physician Identifier Number (UPIN) File is the business entity file that contains the group practice UPIN and descriptive information. It does NOT...

  5. Group Decision Process Support

    DEFF Research Database (Denmark)

    Gøtze, John; Hijikata, Masao

    1997-01-01

    Introducing the notion of Group Decision Process Support Systems (GDPSS) to traditional decision-support theorists.......Introducing the notion of Group Decision Process Support Systems (GDPSS) to traditional decision-support theorists....

  6. Gestalt Interactional Groups

    Science.gov (United States)

    Harman, Robert L.; Franklin, Richard W.

    1975-01-01

    Gestalt therapy in groups is not limited to individual work in the presence of an audience. Describes several ways to involve gestalt groups interactionally. Interactions described focus on learning by doing and discovering, and are noninterpretive. (Author/EJT)

  7. Group B streptococcus - pregnancy

    Science.gov (United States)

    ... medlineplus.gov/ency/patientinstructions/000511.htm Group B streptococcus - pregnancy To use the sharing features on this page, please enable JavaScript. Group B streptococcus (GBS) is a type of bacteria that some ...

  8. Multicultural group work

    DEFF Research Database (Denmark)

    Hansen, Annette Skovsted

    2014-01-01

    Motivation for the activity I use this strategy for forming groups to ensure diverse/multicultural groups that combine a variety of different strengths and resources based on student's academic, disciplinary, linguistic, national, personal and work backgrounds.......Motivation for the activity I use this strategy for forming groups to ensure diverse/multicultural groups that combine a variety of different strengths and resources based on student's academic, disciplinary, linguistic, national, personal and work backgrounds....

  9. The Areva Group; Le groupe Areva

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2004-08-01

    This document provides information on the Areva Group, a world nuclear industry leader, offering solutions for nuclear power generation, electricity transmission and distribution and interconnect systems to the telecommunications, computer and automotive markets. It presents successively the front end division including the group business lines involved in producing nuclear fuel for electric power generation (uranium mining, concentration, conversion and enrichment and nuclear fuel fabrication); the reactors and services division which designs and builds PWR, BWR and research reactors; the back end division which encompasses the management of the fuel that has been used in nuclear power plants; the transmission and distribution division which provides products, systems and services to the medium and high voltage energy markets; the connectors division which designs and manufactures electrical, electronic and optical connectors, flexible micro circuitry and interconnection systems. Areva is implemented in Europe, north and south america, africa and asia-pacific. (A.L.B.)

  10. Groups, combinatorics and geometry

    CERN Document Server

    Ivanov, A A; Saxl, J

    2003-01-01

    Over the past 20 years, the theory of groups in particular simplegroups, finite and algebraic has influenced a number of diverseareas of mathematics. Such areas include topics where groups have beentraditionally applied, such as algebraic combinatorics, finitegeometries, Galois theory and permutation groups, as well as severalmore recent developments.

  11. Working Group 7 Summary

    Energy Technology Data Exchange (ETDEWEB)

    Nagaitsev S.; Berg J.

    2012-06-10

    The primary subject of working group 7 at the 2012 Advanced Accelerator Concepts Workshop was muon accelerators for a muon collider or neutrino factory. Additionally, this working group included topics that did not fit well into other working groups. Two subjects were discussed by more than one speaker: lattices to create a perfectly integrable nonlinear lattice, and a Penning trap to create antihydrogen.

  12. AREVA group overview

    International Nuclear Information System (INIS)

    2002-01-01

    This document presents the Group Areva, a world nuclear industry leader, from a financial holding company to an industrial group, operating in two businesses: the nuclear energy and the components. The structure and the market of the group are discussed, as the financial assets. (A.L.B.)

  13. Group Psychotherapy in Denmark.

    Science.gov (United States)

    Jørgensen, Lars Bo; Thygesen, Bente; Aagaard, Søren

    2015-10-01

    This is a short article on the history and training standards in the Institute of Group Analysis in Copenhagen (IGA-CPH). We describe theoretical orientations and influences in the long-term training program and new initiatives, like courses in mentalization-based group treatment and a dynamic short-term group therapy course, as well as research in group psychotherapy in Denmark. Some group analytic initiatives in relation to social issues and social welfare are presented, as well as initiatives concerning the school system and unemployment.

  14. Group theory I essentials

    CERN Document Server

    Milewski, Emil G

    2012-01-01

    REA's Essentials provide quick and easy access to critical information in a variety of different fields, ranging from the most basic to the most advanced. As its name implies, these concise, comprehensive study guides summarize the essentials of the field covered. Essentials are helpful when preparing for exams, doing homework and will remain a lasting reference source for students, teachers, and professionals. Group Theory I includes sets and mapping, groupoids and semi-groups, groups, isomorphisms and homomorphisms, cyclic groups, the Sylow theorems, and finite p-groups.

  15. Lectures on Chevalley groups

    CERN Document Server

    Steinberg, Robert

    2016-01-01

    Robert Steinberg's Lectures on Chevalley Groups were delivered and written during the author's sabbatical visit to Yale University in the 1967-1968 academic year. The work presents the status of the theory of Chevalley groups as it was in the mid-1960s. Much of this material was instrumental in many areas of mathematics, in particular in the theory of algebraic groups and in the subsequent classification of finite groups. This posthumous edition incorporates additions and corrections prepared by the author during his retirement, including a new introductory chapter. A bibliography and editorial notes have also been added. This is a great unsurpassed introduction to the subject of Chevalley groups that influenced generations of mathematicians. I would recommend it to anybody whose interests include group theory. -Efim Zelmanov, University of California, San Diego Robert Steinberg's lectures on Chevalley groups were given at Yale University in 1967. The notes for the lectures contain a wonderful exposition of ...

  16. E-groups training

    CERN Multimedia

    HR Department

    2012-01-01

    There will be an e-groups training course on 16 March 2012 which will cover the main e-groups functionalities i.e.: creating and managing e-groups, difference between static and dynamic e-groups, configuring posting restrictions and archives, examples of where e-groups can be used in daily work. Even if you have already worked with e-groups, this may be a good opportunity to learn about the best practices and security related recommendations when using e-groups. You can find more details as well as enrolment form for the training (it’s free) here. The number of places is limited, so enrolling early is recommended.   Technical Training Tel. 72844

  17. Group Psychotherapy in Italy.

    Science.gov (United States)

    Giannone, Francesca; Giordano, Cecilia; Di Blasi, Maria

    2015-10-01

    This article describes the history and the prevailing orientations of group psychotherapy in Italy (psychoanalytically oriented, psychodrama, CBT groups) and particularly group analysis. Provided free of charge by the Italian health system, group psychotherapy is growing, but its expansion is patchy. The main pathways of Italian training in the different group psychotherapy orientations are also presented. Clinical-theoretical elaboration on self development, psychopathology related to group experiences, and the methodological attention paid to objectives and methods in different clinical groups are issues related to group therapy in Italy. Difficulties in the relationship between research and clinical practice are discussed, as well as the empirical research network that tries to bridge the gap between research and clinical work in group psychotherapy. The economic crisis in Italy has led to massive cuts in health care and to an increasing demand for some forms of psychological treatment. For these reasons, and because of its positive cost-benefit ratio, group psychotherapy is now considered an important tool in the national health care system to expand the clinical response to different forms of psychological distress.

  18. Geometric group theory

    CERN Document Server

    Bestvina, Mladen; Vogtmann, Karen

    2014-01-01

    Geometric group theory refers to the study of discrete groups using tools from topology, geometry, dynamics and analysis. The field is evolving very rapidly and the present volume provides an introduction to and overview of various topics which have played critical roles in this evolution. The book contains lecture notes from courses given at the Park City Math Institute on Geometric Group Theory. The institute consists of a set of intensive short courses offered by leaders in the field, designed to introduce students to exciting, current research in mathematics. These lectures do not duplicate standard courses available elsewhere. The courses begin at an introductory level suitable for graduate students and lead up to currently active topics of research. The articles in this volume include introductions to CAT(0) cube complexes and groups, to modern small cancellation theory, to isometry groups of general CAT(0) spaces, and a discussion of nilpotent genus in the context of mapping class groups and CAT(0) gro...

  19. CLASSIFICATION OF CRIMINAL GROUPS

    OpenAIRE

    Natalia Romanova

    2013-01-01

    New types of criminal groups are emerging in modern society.  These types have their special criminal subculture. The research objective is to develop new parameters of classification of modern criminal groups, create a new typology of criminal groups and identify some features of their subculture. Research methodology is based on the system approach that includes using the method of analysis of documentary sources (materials of a criminal case), method of conversations with themembers of the...

  20. Group therapy for adolescents

    OpenAIRE

    Nada Hribar

    2001-01-01

    The group included adolescents from secondary school and some students. The group had weekly sessions or twice on mounth. The adolescents had varied simptoms: depressive, anxiety, psychosomatic disorders, learning difficulties, cunduct problems. All of adolescents were common on many problems in social interactions. The goal of therapeutic work were: to increase assertiveness skills and to reduce the anxious in social situations. The adolescents in group raised a self-esteem and developed som...

  1. Presentations of groups

    CERN Document Server

    Johnson, D L

    1997-01-01

    The aim of this book is to provide an introduction to combinatorial group theory. Any reader who has completed first courses in linear algebra, group theory and ring theory will find this book accessible. The emphasis is on computational techniques but rigorous proofs of all theorems are supplied. This new edition has been revised throughout, including new exercises and an additional chapter on proving that certain groups are infinite.

  2. Group-Server Queues

    OpenAIRE

    Li, Quan-Lin; Ma, Jing-Yu; Xie, Mingzhou; Xia, Li

    2017-01-01

    By analyzing energy-efficient management of data centers, this paper proposes and develops a class of interesting {\\it Group-Server Queues}, and establishes two representative group-server queues through loss networks and impatient customers, respectively. Furthermore, such two group-server queues are given model descriptions and necessary interpretation. Also, simple mathematical discussion is provided, and simulations are made to study the expected queue lengths, the expected sojourn times ...

  3. Environmental groups in politics

    International Nuclear Information System (INIS)

    Lowe, P.; Goyder, J.

    1983-01-01

    The subject is covered in chapters, entitled: introduction; (Part I) the environmental movement (environmental groups and the attentive public; the episodic development of the environmental movement; the underlying values of environmentalism; the roots of environmental concern; the social limits to growth; elite manipulation of values); the organisation of environmental groups; environmental groups in national politics; environmental groups in local politics; (Part II) the Henley Society; Friends of the Earth; the National Trust; the Royal Society for Nature Conservation; the European Environmental Bureau. (U.K.)

  4. Complex quantum groups

    International Nuclear Information System (INIS)

    Drabant, B.; Schlieker, M.

    1993-01-01

    The complex quantum groups are constructed. They are q-deformations of the real Lie groups which are obtained as the complex groups corresponding to the Lie algebras of type A n-1 , B n , C n . Following the ideas of Faddeev, Reshetikhin and Takhtajan Hopf algebras of regular functionals U R for these complexified quantum groups are constructed. One has thus in particular found a construction scheme for the q-Lorentz algebra to be identified as U(sl q (2,C). (orig.)

  5. Explosive Technology Group

    Data.gov (United States)

    Federal Laboratory Consortium — The Explosive Technology Group (ETG) provides diverse technical expertise and an agile, integrated approach to solve complex challenges for all classes of energetic...

  6. Study Groups in Denmark

    DEFF Research Database (Denmark)

    Hjorth, Poul G.

    2007-01-01

    Since 1998 European Study Groups have been held in Denmark, and Danish companies from LEGO and NOVO to very small high-tech firms have participated. I briefly describe the history, the organisation and the format of the Danish Study Groups, and highlight a few problem solutions.......Since 1998 European Study Groups have been held in Denmark, and Danish companies from LEGO and NOVO to very small high-tech firms have participated. I briefly describe the history, the organisation and the format of the Danish Study Groups, and highlight a few problem solutions....

  7. Lie groups for pedestrians

    CERN Document Server

    Lipkin, Harry J

    2002-01-01

    According to the author of this concise, high-level study, physicists often shy away from group theory, perhaps because they are unsure which parts of the subject belong to the physicist and which belong to the mathematician. However, it is possible for physicists to understand and use many techniques which have a group theoretical basis without necessarily understanding all of group theory. This book is designed to familiarize physicists with those techniques. Specifically, the author aims to show how the well-known methods of angular momentum algebra can be extended to treat other Lie group

  8. The normal holonomy group

    International Nuclear Information System (INIS)

    Olmos, C.

    1990-05-01

    The restricted holonomy group of a Riemannian manifold is a compact Lie group and its representation on the tangent space is a product of irreducible representations and a trivial one. Each one of the non-trivial factors is either an orthogonal representation of a connected compact Lie group which acts transitively on the unit sphere or it is the isotropy representation of a single Riemannian symmetric space of rank ≥ 2. We prove that, all these properties are also true for the representation on the normal space of the restricted normal holonomy group of any submanifold of a space of constant curvature. 4 refs

  9. Trajectory grouping structure

    Directory of Open Access Journals (Sweden)

    Maike Buchin

    2015-03-01

    Full Text Available The collective motion of a set of moving entities like people, birds, or other animals, is characterized by groups arising, merging, splitting, and ending. Given the trajectories of these entities, we define and model a structure that captures all of such changes using the Reeb graph, a concept from topology. The trajectory grouping structure has three natural parameters that allow more global views of the data in group size, group duration, and entity inter-distance. We prove complexity bounds on the maximum number of maximal groups that can be present, and give algorithms to compute the grouping structure efficiently. We also study how the trajectory grouping structure can be made robust, that is, how brief interruptions of groups can be disregarded in the global structure, adding a notion of persistence to the structure. Furthermore, we showcase the results of experiments using data generated by the NetLogo flocking model and from the Starkey project. The Starkey data describe the movement of elk, deer, and cattle. Although there is no ground truth for the grouping structure in this data, the experiments show that the trajectory grouping structure is plausible and has the desired effects when changing the essential parameters. Our research provides the first complete study of trajectory group evolvement, including combinatorial,algorithmic, and experimental results.

  10. Computational methods working group

    International Nuclear Information System (INIS)

    Gabriel, T.A.

    1997-09-01

    During the Cold Moderator Workshop several working groups were established including one to discuss calculational methods. The charge for this working group was to identify problems in theory, data, program execution, etc., and to suggest solutions considering both deterministic and stochastic methods including acceleration procedures.

  11. GroupFinder

    DEFF Research Database (Denmark)

    Bøgh, Kenneth Sejdenfaden; Skovsgaard, Anders; Jensen, Christian S.

    2013-01-01

    . Such groups are relevant to users who wish to conveniently explore several options before making a decision such as to purchase a specific product. Specifically, we demonstrate a practical proposal for finding top-k PoI groups in response to a query. We show how problem parameter settings can be mapped...

  12. Toleration, Groups, and Multiculturalism

    DEFF Research Database (Denmark)

    Lægaard, Sune

    2014-01-01

    have the ability to interfere with the group’s activities, an object of dislike or disapproval, an agent enjoying non-interference or a moral patient. This means that 'toleration of groups' can mean quite different things depending on the exact meaning of 'group' in relation to each component...

  13. Group B Strep Infection

    Science.gov (United States)

    ... IV) to kill the germs. If you take antibiotics while you’re in labor, the chances are very good that your baby won’t get this infection. What if my baby has group B strep? If your baby gets group B strep, he or she will be treated with IV antibiotics to kill the bacteria. Your baby will stay ...

  14. Group Process as Drama.

    Science.gov (United States)

    McLeod, John

    1984-01-01

    Suggests that drama, as well as training or therapy, may be employed as a useful research and practice paradigm in working with small groups. The implications of this view for group development as a whole, and for member and leader participation, are explored. (JAC)

  15. Group Work. Research Brief

    Science.gov (United States)

    Walker, Karen

    2010-01-01

    According to Johnson and Johnson, group work helps increase student retention and satisfaction, develops strong oral communication and social skills, as well as higher self-esteem (University of Minnesota, n.d.). Group work, when planned and implemented deliberately and thoughtfully helps students develop cognitive and leadership skills as well as…

  16. Physically detached 'compact groups'

    Science.gov (United States)

    Hernquist, Lars; Katz, Neal; Weinberg, David H.

    1995-01-01

    A small fraction of galaxies appear to reside in dense compact groups, whose inferred crossing times are much shorter than a Hubble time. These short crossing times have led to considerable disagreement among researchers attempting to deduce the dynamical state of these systems. In this paper, we suggest that many of the observed groups are not physically bound but are chance projections of galaxies well separated along the line of sight. Unlike earlier similar proposals, ours does not require that the galaxies in the compact group be members of a more diffuse, but physically bound entity. The probability of physically separated galaxies projecting into an apparent compact group is nonnegligible if most galaxies are distributed in thin filaments. We illustrate this general point with a specific example: a simulation of a cold dark matter universe, in which hydrodynamic effects are included to identify galaxies. The simulated galaxy distribution is filamentary and end-on views of these filaments produce apparent galaxy associations that have sizes and velocity dispersions similar to those of observed compact groups. The frequency of such projections is sufficient, in principle, to explain the observed space density of groups in the Hickson catalog. We discuss the implications of our proposal for the formation and evolution of groups and elliptical galaxies. The proposal can be tested by using redshift-independent distance estimators to measure the line-of-sight spatial extent of nearby compact groups.

  17. Introduction to quantum groups

    International Nuclear Information System (INIS)

    Sudbery, A.

    1996-01-01

    These pedagogical lectures contain some motivation for the study of quantum groups; a definition of ''quasi triangular Hopf algebra'' with explanations of all the concepts required to build it up; descriptions of quantised universal enveloping algebras and the quantum double; and an account of quantised function algebras and the action of quantum groups on quantum spaces. (author)

  18. Beam dynamics group summary

    International Nuclear Information System (INIS)

    Peggs, S.

    1994-01-01

    This paper summarizes the activities of the beam dynamics working group of the LHC Collective Effects Workshop that was held in Montreux in 1994. It reviews the presentations that were made to the group, the discussions that ensued, and the consensuses that evolved

  19. Our Deming Users' Group.

    Science.gov (United States)

    Dinklocker, Christina

    1992-01-01

    After training in the Total Quality Management concept, a suburban Ohio school district created a Deming Users' Group to link agencies, individuals, and ideas. The group has facilitated ongoing school/business collaboration, networking among individuals from diverse school systems, mentoring and cooperative learning activities, and resource…

  20. Asymmetry within social groups

    DEFF Research Database (Denmark)

    Barker, Jessie; Loope, Kevin J.; Reeve, H. Kern

    2016-01-01

    Social animals vary in their ability to compete with group members over shared resources and also vary in their cooperative efforts to produce these resources. Competition among groups can promote within-group cooperation, but many existing models of intergroup cooperation do not explicitly account...... of two roles, with relative competitive efficiency and the number of individuals varying between roles. Players in each role make simultaneous, coevolving decisions. The model predicts that although intergroup competition increases cooperative contributions to group resources by both roles, contributions...... are predominantly from individuals in the less competitively efficient role, whereas individuals in the more competitively efficient role generally gain the larger share of these resources. When asymmetry in relative competitive efficiency is greater, a group's per capita cooperation (averaged across both roles...

  1. Supervision and group dynamics

    DEFF Research Database (Denmark)

    Hansen, Søren; Jensen, Lars Peter

    2004-01-01

     An important aspect of the problem based and project organized study at Aalborg University is the supervision of the project groups. At the basic education (first year) it is stated in the curriculum that part of the supervisors' job is to deal with group dynamics. This is due to the experience...... that many students are having difficulties with practical issues such as collaboration, communication, and project management. Most supervisors either ignore this demand, because they do not find it important or they find it frustrating, because they do not know, how to supervise group dynamics...... as well as at Aalborg University. The first visible result has been participating supervisors telling us that the course has inspired them to try supervising group dynamics in the future. This paper will explore some aspects of supervising group dynamics as well as, how to develop the Aalborg model...

  2. Summary of group discussions

    International Nuclear Information System (INIS)

    2009-01-01

    A key aspect of the workshop was the interaction and exchange of ideas and information among the 40 participants. To facilitate this activity the workshop participants were divided into five discussions groups. These groups reviewed selected subjects and reported back to the main body with summaries of their considerations. Over the 3 days the 5 discussion groups were requested to focus on the following subjects: the characteristics and capabilities of 'good' organisations; how to ensure sufficient resources; how to ensure competence within the organisation; how to demonstrate organisational suitability; the regulatory oversight processes - including their strengths and weaknesses. A list of the related questions that were provided to the discussion groups can be found in Appendix 3. Also included in Appendix 3 are copies of the slides the groups prepared that summarised their considerations

  3. Natural analogue working group

    International Nuclear Information System (INIS)

    Come, B.; Chapman, N.

    1986-01-01

    A Natural Analogue Working Group was established by the Commission of the European Communities in 1985. The purpose of this group is to bring together modellers with earth scientists and others, so that maximum benefit can be obtained from natural analogue studies with a view to safe geological disposal of radioactive waste. The first meeting of this group was held in Brussels from November 5 to 7, 1985. The discussions mainly concerned the identification of the modellers' needs and of the earth scientists' capacity to provide for them. Following the debates, a written statement was produced by the Group; this document forms the core of the present Report. Notes and outlines of many of the presentations made are grouped in four appendixes. The valuable contribution of all those involved in the meeting is gratefully acknowledged

  4. Ordered groups and topology

    CERN Document Server

    Clay, Adam

    2016-01-01

    This book deals with the connections between topology and ordered groups. It begins with a self-contained introduction to orderable groups and from there explores the interactions between orderability and objects in low-dimensional topology, such as knot theory, braid groups, and 3-manifolds, as well as groups of homeomorphisms and other topological structures. The book also addresses recent applications of orderability in the studies of codimension-one foliations and Heegaard-Floer homology. The use of topological methods in proving algebraic results is another feature of the book. The book was written to serve both as a textbook for graduate students, containing many exercises, and as a reference for researchers in topology, algebra, and dynamical systems. A basic background in group theory and topology is the only prerequisite for the reader.

  5. Group prenatal care.

    Science.gov (United States)

    Mazzoni, Sara E; Carter, Ebony B

    2017-06-01

    Patients participating in group prenatal care gather together with women of similar gestational ages and 2 providers who cofacilitate an educational session after a brief medical assessment. The model was first described in the 1990s by a midwife for low-risk patients and is now practiced by midwives and physicians for both low-risk patients and some high-risk patients, such as those with diabetes. The majority of literature on group prenatal care uses CenteringPregnancy, the most popular model. The first randomized controlled trial of CenteringPregnancy showed that it reduced the risk of preterm birth in low-risk women. However, recent meta-analyses have shown similar rates of preterm birth, low birthweight, and neonatal intensive care unit admission between women participating in group prenatal care and individual prenatal care. There may be subgroups, such as African Americans, who benefit from this type of prenatal care with significantly lower rates of preterm birth. Group prenatal care seems to result in increased patient satisfaction and knowledge and use of postpartum family planning as well as improved weight gain parameters. The literature is inconclusive regarding breast-feeding, stress, depression, and positive health behaviors, although it is theorized that group prenatal care positively affects these outcomes. It is unclear whether group prenatal care results in cost savings, although it may in large-volume practices if each group consists of approximately 8-10 women. Group prenatal care requires a significant paradigm shift. It can be difficult to implement and sustain. More randomized trials are needed to ascertain the true benefits of the model, best practices for implementation, and subgroups who may benefit most from this innovative way to provide prenatal care. In short, group prenatal care is an innovative and promising model with comparable pregnancy outcomes to individual prenatal care in the general population and improved outcomes in some

  6. Critical groups - basic concepts

    International Nuclear Information System (INIS)

    Carter, M.W.

    1992-01-01

    The potential exposure pathways from the land application site to man are presented. It is emphasised that the critical group is not necessary the population group closest to the source. It could be the group impact by the most significant pathways(s). Only by assessing the importance of each of these pathways and then combining them can a proper choice of critical group be made. It would be wrong to select a critical group on the basis that it seems the most probable one, before the pathways have been properly assessed. A calculation in Carter (1983) suggested that for the operating mine site, the annual doses to an Aboriginal person, a service worker and a local housewife, were all about the same and were in the range 0.1 to 0.2 mSv per year. Thus it may be that for the land application area, the critical group turns out to be non-Aboriginal rather than the expected Aboriginal group. 6 refs., 3 figs

  7. Groups - Modular Mathematics Series

    CERN Document Server

    Jordan, David

    1994-01-01

    This text provides an introduction to group theory with an emphasis on clear examples. The authors present groups as naturally occurring structures arising from symmetry in geometrical figures and other mathematical objects. Written in a 'user-friendly' style, where new ideas are always motivated before being fully introduced, the text will help readers to gain confidence and skill in handling group theory notation before progressing on to applying it in complex situations. An ideal companion to any first or second year course on the topic.

  8. Introduction to quantum groups

    CERN Document Server

    Chaichian, Masud

    1996-01-01

    In the past decade there has been an extemely rapid growth in the interest and development of quantum group theory.This book provides students and researchers with a practical introduction to the principal ideas of quantum groups theory and its applications to quantum mechanical and modern field theory problems. It begins with a review of, and introduction to, the mathematical aspects of quantum deformation of classical groups, Lie algebras and related objects (algebras of functions on spaces, differential and integral calculi). In the subsequent chapters the richness of mathematical structure

  9. Group key management

    Energy Technology Data Exchange (ETDEWEB)

    Dunigan, T.; Cao, C.

    1997-08-01

    This report describes an architecture and implementation for doing group key management over a data communications network. The architecture describes a protocol for establishing a shared encryption key among an authenticated and authorized collection of network entities. Group access requires one or more authorization certificates. The implementation includes a simple public key and certificate infrastructure. Multicast is used for some of the key management messages. An application programming interface multiplexes key management and user application messages. An implementation using the new IP security protocols is postulated. The architecture is compared with other group key management proposals, and the performance and the limitations of the implementation are described.

  10. Group therapy for adolescents

    Directory of Open Access Journals (Sweden)

    Nada Hribar

    2001-03-01

    Full Text Available The group included adolescents from secondary school and some students. The group had weekly sessions or twice on mounth. The adolescents had varied simptoms: depressive, anxiety, psychosomatic disorders, learning difficulties, cunduct problems. All of adolescents were common on many problems in social interactions. The goal of therapeutic work were: to increase assertiveness skills and to reduce the anxious in social situations. The adolescents in group raised a self-esteem and developed some assertiveness skills: eye contact" and effective communication skills, persistence, refusing and requesting, giving and receiving critism, etc. The methods of work and techniques were based on principles of cognitive-behaviour therapy.

  11. Matrix groups for undergraduates

    CERN Document Server

    Tapp, Kristopher

    2005-01-01

    Matrix groups touch an enormous spectrum of the mathematical arena. This textbook brings them into the undergraduate curriculum. It makes an excellent one-semester course for students familiar with linear and abstract algebra and prepares them for a graduate course on Lie groups. Matrix Groups for Undergraduates is concrete and example-driven, with geometric motivation and rigorous proofs. The story begins and ends with the rotations of a globe. In between, the author combines rigor and intuition to describe basic objects of Lie theory: Lie algebras, matrix exponentiation, Lie brackets, and maximal tori.

  12. UnitedHealth Group

    Science.gov (United States)

    UnitedHealth Group provides accessible and affordable services, improved quality of care, coordinated health care efforts, and a supportive environment for shared decision making between patients and their physicians.

  13. Homogeneous group, research, institution

    Directory of Open Access Journals (Sweden)

    Francesca Natascia Vasta

    2014-09-01

    Full Text Available The work outlines the complex connection among empiric research, therapeutic programs and host institution. It is considered the current research state in Italy. Italian research field is analyzed and critic data are outlined: lack of results regarding both the therapeutic processes and the effectiveness of eating disorders group analytic treatment. The work investigates on an eating disorders homogeneous group, led into an eating disorder outpatient service. First we present the methodological steps the research is based on including the strong connection among theory and clinical tools. Secondly clinical tools are described and the results commented. Finally, our results suggest the necessity of validating some more specifical hypothesis: verifying the relationship between clinical improvement (sense of exclusion and painful emotions reduction and specific group therapeutic processes; verifying the relationship between depressive feelings, relapses and transition trough a more differentiated groupal field.Keywords: Homogeneous group; Eating disorders; Institutional field; Therapeutic outcome

  14. Color transparency study group

    International Nuclear Information System (INIS)

    Appel, J.A.; Pordes, S.; Botts, J.; Bunce, G.; Farrar, G.

    1990-01-01

    The group studied the relatively new notion of color transparency, discussed present experimental evidence for the effect, and explored several ideas for future experiments. This write-up summarizes these discussions. 11 refs., 1 fig

  15. Generalized quantum groups

    International Nuclear Information System (INIS)

    Leivo, H.P.

    1992-01-01

    The algebraic approach to quantum groups is generalized to include what may be called an anyonic symmetry, reflecting the appearance of phases more general than ±1 under transposition. (author). 6 refs

  16. Groups – Additive Notation

    Directory of Open Access Journals (Sweden)

    Coghetto Roland

    2015-06-01

    Full Text Available We translate the articles covering group theory already available in the Mizar Mathematical Library from multiplicative into additive notation. We adapt the works of Wojciech A. Trybulec [41, 42, 43] and Artur Korniłowicz [25].

  17. Groups – Additive Notation

    OpenAIRE

    Coghetto Roland

    2015-01-01

    We translate the articles covering group theory already available in the Mizar Mathematical Library from multiplicative into additive notation. We adapt the works of Wojciech A. Trybulec [41, 42, 43] and Artur Korniłowicz [25].

  18. Creativity and group innovation

    NARCIS (Netherlands)

    Nijstad, B.A.; de Dreu, C.K.W.

    2002-01-01

    Comments on M. West's article regarding the validity of an integrative model of creativity and innovation implementation in work groups. Variables affecting the level of team innovation; Relationship between predictors and team innovation; Promotion of constructive conflict.

  19. Truck shovel users group

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, J. [Surface Mining Association for Research and Technology, AB (Canada)

    2008-07-01

    The Truck Shovel Users Group (TSUG) was developed as part of the Surface Mining Association for Research and Technology (SMART), an association of companies that meet to coordinate technology developments for the mining industry. The TSUG meet regularly to discuss equipment upgrades, maintenance planning systems, and repair techniques. The group strives to maximize the value of its assets through increased safety, equipment performance and productivity. This presentation provided administrative details about the TSUG including contact details and admission costs. It was concluded that members of the group must be employed by companies that use heavy mining equipment, and must also be willing to host meetings, make presentations, and support the common goals of the group. tabs., figs.

  20. The theory of groups

    CERN Document Server

    Hall, Marshall

    2018-01-01

    This 1959 text offers an unsurpassed resource for learning and reviewing the basics of a fundamental and ever-expanding area. "This remarkable book undoubtedly will become a standard text on group theory." - American Scientist.

  1. Radiation Protection Group

    CERN Document Server

    2006-01-01

    The Radioactive Waste Section of the Radiation Protection Group wishes to inform you that the Radioactive Waste Treatment Centre will be closed on the afternoon of Tuesday 19 December 2006. Thank-you for your understanding.

  2. The Military Cooperation Group

    National Research Council Canada - National Science Library

    Renzi, Jr, Alfred E

    2006-01-01

    .... This thesis will describe a structure to assist with both those needs. The premise is that an expanded and improved network of US Military Groups is the weapon of choice for the war on terror, and beyond...

  3. Introduction to group theory

    Directory of Open Access Journals (Sweden)

    Canals B.

    2012-03-01

    Full Text Available This chapter is a concise mathematical introduction into the algebra of groups. It is build up in the way that definitions are followed by propositions and proofs. The concepts and the terminology introduced here will serve as a basis for the following chapters that deal with group theory in the stricter sense and its application to problems in physics. The mathematical prerequisites are at the bachelor level.1

  4. Groups, rings, modules

    CERN Document Server

    Auslander, Maurice

    2014-01-01

    This classic monograph is geared toward advanced undergraduates and graduate students. The treatment presupposes some familiarity with sets, groups, rings, and vector spaces. The four-part approach begins with examinations of sets and maps, monoids and groups, categories, and rings. The second part explores unique factorization domains, general module theory, semisimple rings and modules, and Artinian rings. Part three's topics include localization and tensor products, principal ideal domains, and applications of fundamental theorem. The fourth and final part covers algebraic field extensions

  5. Focus Group Guide

    Science.gov (United States)

    2017-07-01

    home for the arrival of school- aged children. TIP: Do not conduct focus groups in a command conference room in the command group area. Doing so...organizational effectiveness and equal opportunity/equal employment opportunity/fair treatment and sexual assault and response factors (which are listed on the... Sexual Harassment (C) Sex Harassment Retaliation (D) Discrimination - Sex (E) Discrimination - Race (F) Discrimination - Disability (G

  6. Choice Shifts in Groups

    OpenAIRE

    Kfir Eliaz; Debraj Ray

    2004-01-01

    The phenomenon of "choice shifts" in group decision-making is fairly ubiquitous in the social psychology literature. Faced with a choice between a ``safe" and ``risky" decision, group members appear to move to one extreme or the other, relative to the choices each member might have made on her own. Both risky and cautious shifts have been identified in different situations. This paper demonstrates that from an individual decision-making perspective, choice shifts may be viewed as a systematic...

  7. Group Capability Model

    Science.gov (United States)

    Olejarski, Michael; Appleton, Amy; Deltorchio, Stephen

    2009-01-01

    The Group Capability Model (GCM) is a software tool that allows an organization, from first line management to senior executive, to monitor and track the health (capability) of various groups in performing their contractual obligations. GCM calculates a Group Capability Index (GCI) by comparing actual head counts, certifications, and/or skills within a group. The model can also be used to simulate the effects of employee usage, training, and attrition on the GCI. A universal tool and common method was required due to the high risk of losing skills necessary to complete the Space Shuttle Program and meet the needs of the Constellation Program. During this transition from one space vehicle to another, the uncertainty among the critical skilled workforce is high and attrition has the potential to be unmanageable. GCM allows managers to establish requirements for their group in the form of head counts, certification requirements, or skills requirements. GCM then calculates a Group Capability Index (GCI), where a score of 1 indicates that the group is at the appropriate level; anything less than 1 indicates a potential for improvement. This shows the health of a group, both currently and over time. GCM accepts as input head count, certification needs, critical needs, competency needs, and competency critical needs. In addition, team members are categorized by years of experience, percentage of contribution, ex-members and their skills, availability, function, and in-work requirements. Outputs are several reports, including actual vs. required head count, actual vs. required certificates, CGI change over time (by month), and more. The program stores historical data for summary and historical reporting, which is done via an Excel spreadsheet that is color-coded to show health statistics at a glance. GCM has provided the Shuttle Ground Processing team with a quantifiable, repeatable approach to assessing and managing the skills in their organization. They now have a common

  8. Parton Distributions Working Group

    International Nuclear Information System (INIS)

    Barbaro, L. de; Keller, S. A.; Kuhlmann, S.; Schellman, H.; Tung, W.-K.

    2000-01-01

    This report summarizes the activities of the Parton Distributions Working Group of the QCD and Weak Boson Physics workshop held in preparation for Run II at the Fermilab Tevatron. The main focus of this working group was to investigate the different issues associated with the development of quantitative tools to estimate parton distribution functions uncertainties. In the conclusion, the authors introduce a Manifesto that describes an optimal method for reporting data

  9. Renormalization Group Theory

    International Nuclear Information System (INIS)

    Stephens, C. R.

    2006-01-01

    In this article I give a brief account of the development of research in the Renormalization Group in Mexico, paying particular attention to novel conceptual and technical developments associated with the tool itself, rather than applications of standard Renormalization Group techniques. Some highlights include the development of new methods for understanding and analysing two extreme regimes of great interest in quantum field theory -- the ''high temperature'' regime and the Regge regime

  10. Independents' group posts loss

    International Nuclear Information System (INIS)

    Sanders, V.; Price, R.B.

    1992-01-01

    Low oil gas prices and special charges caused the group of 50 U.S. independent producers Oil and Gas Journal tracks to post a combined loss in first half 1992. The group logged a net loss of $53 million in the first half compared with net earnings of $354 million in first half 1991, when higher oil prices during the Persian Gulf crisis buoyed earnings in spite of crude oil and natural gas production declines. The combined loss in the first half follows a 45% drop in the group's earnings in 1991 and compares with the OGJ group of integrated oil companies whose first half 1992 income fell 47% from the prior year. Special charges, generally related to asset writedowns, accounted for most of the almost $560 million in losses posted by about the third of the group. Nerco Oil and Gas Inc., Vancouver, Wash., alone accounted for almost half that total with charges related to an asset writedown of $238 million in the first quarter. Despite the poor first half performance, the outlook is bright for sharply improved group earnings in the second half, assuming reasonably healthy oil and gas prices and increased production resulting from acquisitions and in response to those prices

  11. Assessment of Group Preferences and Group Uncertainty for Decision Making

    Science.gov (United States)

    1976-06-01

    the individ- uals. decision making , group judgments should be preferred to individual judgments if obtaining group judgments costs more. -26- -YI IV... decision making group . IV. A. 3. Aggregation using conjugate distribution. Arvther procedure for combining indivi(jai probability judgments into a group...statisticized group group decision making group judgment subjective probability Delphi method expected utility nominal group 20. ABSTRACT (Continue on

  12. Cyclic Soft Groups and Their Applications on Groups

    Directory of Open Access Journals (Sweden)

    Hacı Aktaş

    2014-01-01

    Full Text Available In crisp environment the notions of order of group and cyclic group are well known due to many applications. In this paper, we introduce order of the soft groups, power of the soft sets, power of the soft groups, and cyclic soft group on a group. We also investigate the relationship between cyclic soft groups and classical groups.

  13. Coordinating Group report

    International Nuclear Information System (INIS)

    1994-01-01

    In December 1992, western governors and four federal agencies established a Federal Advisory Committee to Develop On-site Innovative Technologies for Environmental Restoration and Waste Management (the DOIT Committee). The purpose of the Committee is to advise the federal government on ways to improve waste cleanup technology development and the cleanup of federal sites in the West. The Committee directed in January 1993 that information be collected from a wide range of potential stakeholders and that innovative technology candidate projects be identified, organized, set in motion, and evaluated to test new partnerships, regulatory approaches, and technologies which will lead to improve site cleanup. Five working groups were organized, one to develop broad project selection and evaluation criteria and four to focus on specific contaminant problems. A Coordinating Group comprised of working group spokesmen and federal and state representatives, was set up to plan and organize the routine functioning of these working groups. The working groups were charged with defining particular contaminant problems; identifying shortcomings in technology development, stakeholder involvement, regulatory review, and commercialization which impede the resolution of these problems; and identifying candidate sites or technologies which could serve as regional innovative demonstration projects to test new approaches to overcome the shortcomings. This report from the Coordinating Group to the DOIT Committee highlights the key findings and opportunities uncovered by these fact-finding working groups. It provides a basis from which recommendations from the DOIT Committee to the federal government can be made. It also includes observations from two public roundtables, one on commercialization and another on regulatory and institutional barriers impeding technology development and cleanup

  14. Linear algebraic groups

    CERN Document Server

    Springer, T A

    1998-01-01

    "[The first] ten chapters...are an efficient, accessible, and self-contained introduction to affine algebraic groups over an algebraically closed field. The author includes exercises and the book is certainly usable by graduate students as a text or for self-study...the author [has a] student-friendly style… [The following] seven chapters... would also be a good introduction to rationality issues for algebraic groups. A number of results from the literature…appear for the first time in a text." –Mathematical Reviews (Review of the Second Edition) "This book is a completely new version of the first edition. The aim of the old book was to present the theory of linear algebraic groups over an algebraically closed field. Reading that book, many people entered the research field of linear algebraic groups. The present book has a wider scope. Its aim is to treat the theory of linear algebraic groups over arbitrary fields. Again, the author keeps the treatment of prerequisites self-contained. The material of t...

  15. Summary report: injection group

    International Nuclear Information System (INIS)

    Simpson, J.; Ankenbrandt, C.; Brown, B.

    1984-01-01

    The injector group attempted to define and address several problem areas related to the SSC injector as defined in the Reference Design Study (RDS). It also considered the topic of machine utilization, particularly the question of test beam requirements. Details of the work are given in individually contributed papers, but the general concerns and consensus of the group are presented within this note. The group recognized that the injector as outlined in the RDS was developed primarily for costing estimates. As such, it was not necessarily well optimized from the standpoint of insuring the required beam properties for the SSC. On the other hand, considering the extraordinary short time in which the RDS was prepared, it is an impressive document and a good basis from which to work. Because the documented SSC performance goals are ambitious, the group sought an injector solution which would more likely guarantee that SSC performance not be limited by its injectors. As will be seen, this leads to a somewhat different solution than that described in the RDS. Furthermore, it is the consensus of the group that the new, conservative approach represents only a modest cost increase of the overall project well worth the confidence gained and the risks avoided

  16. Matrix groups for undergraduates

    CERN Document Server

    Tapp, Kristopher

    2016-01-01

    Matrix groups touch an enormous spectrum of the mathematical arena. This textbook brings them into the undergraduate curriculum. It makes an excellent one-semester course for students familiar with linear and abstract algebra and prepares them for a graduate course on Lie groups. Matrix Groups for Undergraduates is concrete and example-driven, with geometric motivation and rigorous proofs. The story begins and ends with the rotations of a globe. In between, the author combines rigor and intuition to describe the basic objects of Lie theory: Lie algebras, matrix exponentiation, Lie brackets, maximal tori, homogeneous spaces, and roots. This second edition includes two new chapters that allow for an easier transition to the general theory of Lie groups. From reviews of the First Edition: This book could be used as an excellent textbook for a one semester course at university and it will prepare students for a graduate course on Lie groups, Lie algebras, etc. … The book combines an intuitive style of writing w...

  17. Frailty Across Age Groups.

    Science.gov (United States)

    Pérez-Zepeda, M U; Ávila-Funes, J A; Gutiérrez-Robledo, L M; García-Peña, C

    2016-01-01

    The implementation of an aging biomarker into clinical practice is under debate. The Frailty Index is a model of deficit accumulation and has shown to accurately capture frailty in older adults, thus bridging biological with clinical practice. To describe the association of socio-demographic characteristics and the Frailty Index in different age groups (from 20 to over one hundred years) in a representative sample of Mexican subjects. Cross-sectional analysis. Nationwide and population-representative survey. Adults 20-years and older interviewed during the last Mexican National Health and Nutrition Survey (2012). A 30-item Frailty Index following standard construction was developed. Multi-level regression models were performed to test the associations of the Frailty Index with multiple socio-demographic characteristics across age groups. A total of 29,504 subjects was analyzed. The 30-item Frailty Index showed the highest scores in the older age groups, especially in women. No sociodemographic variable was associated with the Frailty Index in all the studied age groups. However, employment, economic income, and smoking status were more consistently found across age groups. To our knowledge, this is the first report describing the Frailty Index in a representative large sample of a Latin American country. Increasing age and gender were closely associated with a higher score.

  18. Illinois Wind Workers Group

    Energy Technology Data Exchange (ETDEWEB)

    David G. Loomis

    2012-05-28

    The Illinois Wind Working Group (IWWG) was founded in 2006 with about 15 members. It has grown to over 200 members today representing all aspects of the wind industry across the State of Illinois. In 2008, the IWWG developed a strategic plan to give direction to the group and its activities. The strategic plan identifies ways to address critical market barriers to the further penetration of wind. The key to addressing these market barriers is public education and outreach. Since Illinois has a restructured electricity market, utilities no longer have a strong control over the addition of new capacity within the state. Instead, market acceptance depends on willing landowners to lease land and willing county officials to site wind farms. Many times these groups are uninformed about the benefits of wind energy and unfamiliar with the process. Therefore, many of the project objectives focus on conferences, forum, databases and research that will allow these stakeholders to make well-educated decisions.

  19. Focus group discussions

    CERN Document Server

    Hennink, Monique M

    2014-01-01

    The Understanding Research series focuses on the process of writing up social research. The series is broken down into three categories: Understanding Statistics, Understanding Measurement, and Understanding Qualitative Research. The books provide researchers with guides to understanding, writing, and evaluating social research. Each volume demonstrates how research should be represented, including how to write up the methodology as well as the research findings. Each volume also reviews how to appropriately evaluate published research. Focus Group Discussions addresses the challenges associated with conducting and writing focus group research. It provides detailed guidance on the practical and theoretical considerations in conducting focus group discussions including: designing the discussion guide, recruiting participants, training a field team, moderating techniques and ethical considerations. Monique Hennink describes how a methodology section is read and evaluated by others, such as journal reviewers or ...

  20. Bell, group and tangle

    International Nuclear Information System (INIS)

    Solomon, A. I.

    2010-01-01

    The 'Bell' of the title refers to bipartite Bell states, and their extensions to, for example, tripartite systems. The 'Group' of the title is the Braid Group in its various representations; while 'Tangle' refers to the property of entanglement which is present in both of these scenarios. The objective of this note is to explore the relation between Quantum Entanglement and Topological Links, and to show that the use of the language of entanglement in both cases is more than one of linguistic analogy.

  1. A Quantum Groups Primer

    Science.gov (United States)

    Majid, Shahn

    2002-05-01

    Here is a self-contained introduction to quantum groups as algebraic objects. Based on the author's lecture notes for the Part III pure mathematics course at Cambridge University, the book is suitable as a primary text for graduate courses in quantum groups or supplementary reading for modern courses in advanced algebra. The material assumes knowledge of basic and linear algebra. Some familiarity with semisimple Lie algebras would also be helpful. The volume is a primer for mathematicians but it will also be useful for mathematical physicists.

  2. Introduction to quantum groups

    International Nuclear Information System (INIS)

    Monteiro, Marco A.R.

    1994-01-01

    An elementary introduction to quantum groups is presented. The example of Universal Enveloping Algebra of deformed SU(2) is analysed in detail. It is also discussed systems made up of bosonic q-oscillators at finite temperature within the formalism of Thermo-Field Dynamics. (author). 39 refs

  3. Lectures on Lie groups

    CERN Document Server

    Hsiang, Wu-Yi

    2017-01-01

    This volume consists of nine lectures on selected topics of Lie group theory. We provide the readers a concise introduction as well as a comprehensive 'tour of revisiting' the remarkable achievements of S Lie, W Killing, É Cartan and H Weyl on structural and classification theory of semi-simple Lie groups, Lie algebras and their representations; and also the wonderful duet of Cartans' theory on Lie groups and symmetric spaces.With the benefit of retrospective hindsight, mainly inspired by the outstanding contribution of H Weyl in the special case of compact connected Lie groups, we develop the above theory via a route quite different from the original methods engaged by most other books.We begin our revisiting with the compact theory which is much simpler than that of the general semi-simple Lie theory; mainly due to the well fittings between the Frobenius-Schur character theory and the maximal tori theorem of É Cartan together with Weyl's reduction (cf. Lectures 1-4). It is a wonderful reality of the Lie t...

  4. Gluten Intolerance Group

    Science.gov (United States)

    ... Intolerance Group (GIG), the industry leader in the certification of gluten-free products and food services, announced today that a wide ... of gluten-free products. One of the top certification programs in the world, GFCO inspects products and manufacturing facilities for gluten, in an effort ...

  5. With the Radiobiology Group

    CERN Multimedia

    CERN PhotoLab

    1980-01-01

    The Radiobiology Group carries out experiments to study the effect of radiation on living cells. The photo shows the apparatus for growing broad beans which have been irradiated by 250 GeV protons. The roots are immersed in a tank of running water (CERN Weekly Bulletin 26 January 1981 and Annual Report 1980 p. 160). Karen Panman, Marilena Streit-Bianchi, Roger Paris.

  6. Group control of elevators

    Energy Technology Data Exchange (ETDEWEB)

    Umeda, Yasukazu; Hikita, Shiro; Tuji, Sintaro (Mitsubishi Electric Corp., Tokyo (Japan))

    1988-09-05

    Items to be evaluated in the group control of elevators, and a typical control system are described. A new system in which the fuzzy rule base is employed is introduced together with the configuration. The items to be evaluated are waiting time, riding time, accuracy of forecasting, energy saving, and ease of usage. The everage waiting time of less than 20 seconds with less than 3% waiting rate of more than 60 seconds is accepted as a satisfactory service condition. There are many conflicting matters in group-controlling, and the study for the controlling must deal with the optimization of multi-purpose problems. The standards for group-control evaluation differ according to building structures and the tastes of users, and an important problem is where to give emphasis of the evaluation. The TRAFFIC PATTERN LEARNING METHOD has been applied in the system for careful control to accommodate the traffic. No specific function is provided for the evaluation, but the call allocation is made by fuzzy rule-base. The configuration of a new group-control system is introduced. 7 references, 7 figures, 1 table.

  7. Functional Group Analysis.

    Science.gov (United States)

    Smith, Walter T., Jr.; Patterson, John M.

    1984-01-01

    Literature on analytical methods related to the functional groups of 17 chemical compounds is reviewed. These compounds include acids, acid azides, alcohols, aldehydes, ketones, amino acids, aromatic hydrocarbons, carbodiimides, carbohydrates, ethers, nitro compounds, nitrosamines, organometallic compounds, peroxides, phenols, silicon compounds,…

  8. Moral motivation within groups

    NARCIS (Netherlands)

    Lee, Romy van der

    2013-01-01

    Morality is of particular importance to people: People want to be considered moral and want to belong to moral groups. Consequently, morality judgments have the potential to motivate individuals to behave in ways that are considered to be ‘good’. In the current dissertation, I examined the impact of

  9. Smoot Group Cosmology

    Science.gov (United States)

    the Universe About Cosmology Planck Satellite Launched Cosmology Videos Professor George Smoot's group conducts research on the early universe (cosmology) using the Cosmic Microwave Background radiation (CMB science goals regarding cosmology. George Smoot named Director of Korean Cosmology Institute The GRB

  10. Groups and Symmetry

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 4; Issue 10. Groups and Symmetry: A Guide to Discovering Mathematics. Geetha Venkataraman. Book Review Volume 4 Issue 10 October 1999 pp 91-92. Fulltext. Click here to view fulltext PDF. Permanent link:

  11. Public interest group involvement

    International Nuclear Information System (INIS)

    Shelley, P.

    1986-01-01

    Including public interest groups in the siting process for nuclear waste disposal facilities is of great importance. Controversial sitings often result in litigation, but involving public interest groups early in the process will lessen the change of this. They act as surrogates for the general public and should be considered as members of the team. It is important to remember though, that all public interest groups are different. In choosing public panels such as public advisory committees, members should not be chosen on the basis of some quota. Opposition groups should not be excluded. Also, it is important to put the right person in charge of the committee. The goal of public involvement is to identify the conflicts. This must be done during the decision process, because conflicts must be known before they can be eliminated. Regarding litigation, it is important to ease through and around legal battles. If the siting process has integrity and a good faith effort has been shown, the court should uphold the effort. In addition, it is important to be negotiable and to eliminate shortcuts

  12. Leukosis/Sarcoma Group

    Science.gov (United States)

    The leukosis/sarcoma (L/S) group of diseases designates a variety of transmissible benign and malignant neoplasms of chickens caused by members that belong to the family Retroviridae. Because the expansion of the literature on this disease, it is no longer feasible to cite all relevant publications ...

  13. Working Group Report: Neutrinos

    Energy Technology Data Exchange (ETDEWEB)

    de Gouvea, A.; Pitts, K.; Scholberg, K.; Zeller, G. P. [et al.

    2013-10-16

    This document represents the response of the Intensity Frontier Neutrino Working Group to the Snowmass charge. We summarize the current status of neutrino physics and identify many exciting future opportunities for studying the properties of neutrinos and for addressing important physics and astrophysics questions with neutrinos.

  14. Group: radiation dosimetry

    International Nuclear Information System (INIS)

    Caldas, L.V.E.

    1990-01-01

    The main activities of the radiation dosimetry group is described, including the calibration of instruments, sources and radioactive solutions and the determination of neutron flux; development, production and market dosimetric materials; development radiation sensor make the control of radiation dose received by IPEN workers; development new techniques for monitoring, etc. (C.G.C.)

  15. Categorization by Groups

    NARCIS (Netherlands)

    R.W. Hamilton (Rebecca); S. Puntoni (Stefano); N.T. Tavassoli (Nader)

    2006-01-01

    textabstractCategorization is a core psychological process central to consumer and managerial decision-making. While a substantial amount of research has been conducted to examine individual categorization behaviors, relatively little is known about the group categorization process. In two

  16. Gamma gamma technology group

    Indian Academy of Sciences (India)

    The purpose of the meeting was to form a group of people who ... able by looking at the energy deposited at the face of the final dipole, 4.5 m from ... A F Zarnecki has made a good start on background studies, V Telnov has proposed.

  17. Group theory in physics

    CERN Document Server

    Cornwell, J F

    1989-01-01

    Recent devopments, particularly in high-energy physics, have projected group theory and symmetry consideration into a central position in theoretical physics. These developments have taken physicists increasingly deeper into the fascinating world of pure mathematics. This work presents important mathematical developments of the last fifteen years in a form that is easy to comprehend and appreciate.

  18. Anaphylaxis vulnerable groups

    African Journals Online (AJOL)

    Ehab

    Age groups vulnerable to serious attacks of anaphylaxis include infants, teenagers, pregnant women, and the elderly. Concomitant diseases, such as severe or uncontrolled asthma, cardiovascular disease, mastocytosis or clonal mast cell disorders and the concurrent use of some medications such as beta adrenergic ...

  19. Special Interest Groups.

    Science.gov (United States)

    Degi, Bruce J.

    1999-01-01

    Offers a reflection on the shootings at Columbine High School in Littleton, Colorado, on April 20, 1999. Notes how every special-interest group has used the tragedy to support its own point of view, and concludes that teachers have become bystanders in the education of America's children. (SR)

  20. Ignalina Safety Analysis Group

    International Nuclear Information System (INIS)

    Ushpuras, E.

    1995-01-01

    The article describes the fields of activities of Ignalina NPP Safety Analysis Group (ISAG) in the Lithuanian Energy Institute and overview the main achievements gained since the group establishment in 1992. The group is working under the following guidelines: in-depth analysis of the fundamental physical processes of RBMK-1500 reactors; collection, systematization and verification of the design and operational data; simulation and analysis of potential accident consequences; analysis of thermohydraulic and neutronic characteristics of the plant; provision of technical and scientific consultations to VATESI, Governmental authorities, and also international institutions, participating in various projects aiming at Ignalina NPP safety enhancement. The ISAG is performing broad scientific co-operation programs with both Eastern and Western scientific groups, supplying engineering assistance for Ignalina NPP. ISAG is also participating in the joint Lithuanian - Swedish - Russian project - Barselina, the first Probabilistic Safety Assessment (PSA) study of Ignalina NPP. The work is underway together with Maryland University (USA) for assessment of the accident confinement system for a range of breaks in the primary circuit. At present the ISAG personnel is also involved in the project under the grant from the Nuclear Safety Account, administered by the European Bank for reconstruction and development for the preparation and review of an in-depth safety assessment of the Ignalina plant

  1. Gartner Group reports

    CERN Document Server

    Gartner Group. Stamford, CT

    Gartner Group is the one of the leading independent providers of research and analysis material for IT professionals. Their reports provide in-depth analysis of dominant trends, companies and products. CERN has obtained a licence making these reports available online to anyone within CERN. The database contains not only current reports, updated monthly, but also some going back over a year.

  2. Lattices in group manifolds

    International Nuclear Information System (INIS)

    Lisboa, P.; Michael, C.

    1982-01-01

    We address the question of designing optimum discrete sets of points to represent numerically a continuous group manifold. We consider subsets which are extensions of the regular discrete subgroups. Applications to Monte Carlo simulation of SU(2) and SU(3) gauge theory are discussed. (orig.)

  3. Teaching Badminton to Groups.

    Science.gov (United States)

    Nelson, Jonathan E.

    1980-01-01

    Numerous ideas for teaching badminton to large groups are presented. The focus is on drills and techniques for off the court instructional stations. Instead of having students waiting their turn to play, more students can participate actively as they rotate from one station to another. (JN)

  4. Group leaders optimization algorithm

    Science.gov (United States)

    Daskin, Anmer; Kais, Sabre

    2011-03-01

    We present a new global optimization algorithm in which the influence of the leaders in social groups is used as an inspiration for the evolutionary technique which is designed into a group architecture. To demonstrate the efficiency of the method, a standard suite of single and multi-dimensional optimization functions along with the energies and the geometric structures of Lennard-Jones clusters are given as well as the application of the algorithm on quantum circuit design problems. We show that as an improvement over previous methods, the algorithm scales as N 2.5 for the Lennard-Jones clusters of N-particles. In addition, an efficient circuit design is shown for a two-qubit Grover search algorithm which is a quantum algorithm providing quadratic speedup over the classical counterpart.

  5. Communication from ST Group

    CERN Document Server

    TS Department

    2008-01-01

    Please note that owing the preparations for the Open Days, the FM Group will not able to handle specific requests for waste collection from 2nd to 6th of April, nor removal or PC transport requests between the 31 March and 11 April. We kindly ask you to plan the collection of all types of waste and any urgent transport of office furniture or PCs before 31 March. Waste collection requests must be made by contacting FM Support on 77777 or at the e-mail address mailto:Fm.Support@cern.ch; removal of office furniture or PC transport requests must be made using the EDH ‘Transport request’ form (select "Removals" or "PC transport" from the drop-down menu). For any question concerning the sorting of waste, please consult the following web site: http://dechets-waste.web.cern.ch/dechets-waste/ Thank you for your understanding and collaboration. TS/FM Group

  6. Mindfulness for group facilitation

    DEFF Research Database (Denmark)

    Adriansen, Hanne Kirstine; Krohn, Simon

    2014-01-01

    In this paper, we argue that mindfulness techniques can be used for enhancing the outcome of group performance. The word mindfulness has different connotations in the academic literature. Broadly speaking there is ‘mindfulness without meditation’ or ‘Western’ mindfulness which involves active...... thinking and ‘Eastern’ mindfulness which refers to an open, accepting state of mind, as intended with Buddhist-inspired techniques such as meditation. In this paper, we are interested in the latter type of mindfulness and demonstrate how Eastern mindfulness techniques can be used as a tool for facilitation....... A brief introduction to the physiology and philosophy of Eastern mindfulness constitutes the basis for the arguments of the effect of mindfulness techniques. The use of mindfulness techniques for group facilitation is novel as it changes the focus from individuals’ mindfulness practice...

  7. Group and representation theory

    CERN Document Server

    Vergados, J D

    2017-01-01

    This volume goes beyond the understanding of symmetries and exploits them in the study of the behavior of both classical and quantum physical systems. Thus it is important to study the symmetries described by continuous (Lie) groups of transformations. We then discuss how we get operators that form a Lie algebra. Of particular interest to physics is the representation of the elements of the algebra and the group in terms of matrices and, in particular, the irreducible representations. These representations can be identified with physical observables. This leads to the study of the classical Lie algebras, associated with unitary, unimodular, orthogonal and symplectic transformations. We also discuss some special algebras in some detail. The discussion proceeds along the lines of the Cartan-Weyl theory via the root vectors and root diagrams and, in particular, the Dynkin representation of the roots. Thus the representations are expressed in terms of weights, which are generated by the application of the elemen...

  8. Working group 4: Terrestrial

    International Nuclear Information System (INIS)

    Anon.

    1993-01-01

    A working group at a Canada/USA symposium on climate change and the Arctic identified major concerns and issues related to terrestrial resources. The group examined the need for, and the means of, involving resource managers and users at local and territorial levels in the process of identifying and examining the impacts and consequences of climatic change. Climatic change will be important to the Arctic because of the magnitude of the change projected for northern latitudes; the apparent sensitivity of its terrestrial ecosystems, natural resources, and human support systems; and the dependence of the social, cultural, and economic welfare of Arctic communities, businesses, and industries on the health and quality of their environment. Impacts of climatic change on the physical, biological, and associated socio-economic environment are outlined. Gaps in knowledge needed to quantify these impacts are listed along with their relationships with resource management. Finally, potential actions for response and adaptation are presented

  9. Duality and quantum groups

    International Nuclear Information System (INIS)

    Alvarez-Gaume, L.; Gomez, C.; Sierra, G.

    1990-01-01

    We show that the duality properties of Rational Conformal Field Theories follow from the defining relations and the representation theory of quantum groups. The fusion and braiding matrices are q-analogues of the 6j-symbols and the modular transformation matrices are obtained from the properties of the co-multiplication. We study in detail the Wess-Zumino-Witten models and the rational gaussian models as examples, but carry out the arguments in general. We point out the connections with the Chern-Simons approach. We give general arguments of why the general solution to the polynomial equations of Moore and Seiberg describing the duality properties of Rational Conformal Field Theories defines a Quantum Group acting on the space of conformal blocks. A direct connection between Rational Theories and knot invariants is also presented along the lines of Jones' original work. (orig.)

  10. The Areva Group

    International Nuclear Information System (INIS)

    2004-08-01

    This document provides information on the Areva Group, a world nuclear industry leader, offering solutions for nuclear power generation, electricity transmission and distribution and interconnect systems to the telecommunications, computer and automotive markets. It presents successively the front end division including the group business lines involved in producing nuclear fuel for electric power generation (uranium mining, concentration, conversion and enrichment and nuclear fuel fabrication); the reactors and services division which designs and builds PWR, BWR and research reactors; the back end division which encompasses the management of the fuel that has been used in nuclear power plants; the transmission and distribution division which provides products, systems and services to the medium and high voltage energy markets; the connectors division which designs and manufactures electrical, electronic and optical connectors, flexible micro circuitry and interconnection systems. Areva is implemented in Europe, north and south america, africa and asia-pacific. (A.L.B.)

  11. The Ombudperson Initiative Group

    CERN Multimedia

    Laura Stewart

    Following many discussions that took place at some of the ATLAS Women's Network lunch gatherings, a few ATLAS women joined forces with similarly concerned CERN staff women to form a small group last Fall to discuss the need for a CERN-wide Ombudsperson. This has since evolved into the Ombudsperson Initiative Group (OIG) currently composed of the following members: Barbro Asman, Stockholm University; Pierre Charrue, CERN AB; Anna Cook, CERN IT; Catherine Delamare, CERN and IT Ombudsperson; Paula Eerola, Lund University; Pauline Gagnon, Indiana University; Eugenia Hatziangeli, CERN AB; Doreen Klem, CERN IT; Bertrand Nicquevert, CERN TS and Laura Stewart, CERN AT. On June 12, members of the OIG met with representatives of Human Resources (HR) and the Equal Opportunity Advisory Panel (EOAP) to discuss the proposal drafted by the OIG. The meeting was very positive. Everybody agreed that the current procedures at CERN applicable in the event of conflict required a thorough review, and that a professionnally trai...

  12. Metrically universal abelian groups

    Czech Academy of Sciences Publication Activity Database

    Doucha, Michal

    2017-01-01

    Roč. 369, č. 8 (2017), s. 5981-5998 ISSN 0002-9947 R&D Projects: GA AV ČR IAA100190902 Institutional support: RVO:67985840 Keywords : Abelian group Subject RIV: BA - General Mathematics OBOR OECD: Pure mathematics Impact factor: 1.426, year: 2016 http://www.ams.org/journals/tran/2017-369-08/S0002-9947-2017-07059-8/

  13. Storage ring group summary

    International Nuclear Information System (INIS)

    King, N.M.

    1980-01-01

    The Storage Ring Group set out to identify and pursue salient problems in accelerator physics for heavy ion fusion, divorced from any particular reference design concept. However, it became apparent that some basic parameter framework was required to correlate the different study topics. As the Workshop progressed, ring parameters were modified and updated. Consequently, the accompanying papers on individual topics will be found to refer to slightly varied parameters, according to the stage at which the different problems were tackled

  14. MAGIC user's group software

    International Nuclear Information System (INIS)

    Warren, G.; Ludeking, L.; McDonald, J.; Nguyen, K.; Goplen, B.

    1990-01-01

    The MAGIC User's Group has been established to facilitate the use of electromagnetic particle-in-cell software by universities, government agencies, and industrial firms. The software consists of a series of independent executables that are capable of inter-communication. MAGIC, SOS, μ SOS are used to perform electromagnetic simulations while POSTER is used to provide post-processing capabilities. Each is described in the paper. Use of the codes for Klystrode simulation is discussed

  15. Multibunch working group

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-07-01

    The goal of this working group was to foment discussions about the use and limitations of multi-bunch, representatives from most operating or in-project synchrotron radiation sources (ALS, SPEAR, BESSY-2, SPRING-8, ANKA, DELTA, PEP-2, DIAMOND, ESRF...) have presented their experience. The discussions have been led around 3 topics: 1) resistive wall instabilities and ion instabilities, 2) higher harmonic cavities, and 3) multibunch feedback systems.

  16. Group 4. Containment

    International Nuclear Information System (INIS)

    McCauley, V.S.; Keiser, J.R.

    1992-01-01

    This paper summarizes the findings of the Containment Working Group which met at the Workshop on Radioactive, Hazardous, and/or Mixed Waste Sludge Management. The Containment Working Group (CWG) examined the problems associated with providing adequate containment of waste forms from both short- and long-term storage. By its nature, containment encompasses a wide variety of waste forms, storage conditions, container types, containment schemes, and handling activities. A containment system can be anything from a 55-gal drum to a 100-ft-long underground vault. Because of the diverse nature of containment systems, the CWG chose to focus its limited time on broad issues that are applicable to the design of any containment system, rather than attempting to address problems specific to a particular containment system or waste-form type. Four major issues were identified by the CWG. They relate to: (1) service conditions and required system performance; (2) ultimate disposition; (3) cost and schedule; and (4) acceptance criteria, including quality assurance/quality control (QA/QC) concerns. All of the issues raised by the group are similar in that they all help to define containment system requirements

  17. Near infrared group IV optoelectronics and novel pre-cursors for CVD epitaxy

    Science.gov (United States)

    Hazbun, Ramsey Michael

    Near infrared and mid infrared optoelectronic devices have become increasingly important for the telecommunications, security, and medical imaging industries. The addition of nitrogen to III-V alloys has been widely studied as a method of modifying the band gap for mid infrared (IR) applications. In xGa1-xSb1-y Ny/InAs strained-layer superlattices with type-II (staggered) energy offsets on GaSb substrates, were modeled using eight-band k˙p simulations to analyze the superlattice miniband energies. Three different zero-stress strain balance conditions are reported: fixed superlattice period thickness, fixed InAs well thickness, and fixed InxGa1-xSb 1-yNy barrier thickness. Optoelectronics have traditionally been the realm of III-V semiconductors due to their direct band gap, while integrated circuit chips have been the realm of Group IV semiconductors such as silicon because of its relative abundance and ease of use. Recently the alloying of Sn with Ge and Si has been shown to allow direct band-gap light emission. This presents the exciting prospect of integrating optoelectronics into current Group IV chip fabrication facilities. However, new approaches for low temperature growth are needed to realize these new SiGeSn alloys. Silicon-germanium epitaxy via ultra-high vacuum chemical vapor deposition has the advantage of allowing low process temperatures. Deposition processes are sensitive to substrate surface preparation and the time delay between oxide removal and epitaxial growth. A new monitoring process utilizing doped substrates and defect decoration etching is demonstrated to have controllable and unique sensitivity to interfacial contaminants. Doped substrates were prepared and subjected to various loading conditions prior to the growth of typical Si/SiGe bilayers. The defect densities were correlated to the concentration of interfacial oxygen suggesting this monitoring process may be an effective complement to monitoring via secondary ion mass spectrometry

  18. Technology working group

    International Nuclear Information System (INIS)

    Tsujikura, Y.

    2000-01-01

    The workshop of 26-27 june 2000, on nuclear power Plant LIfe Management (PLIM), also included working groups in which major issues facing PLIM activities for nuclear power plants were identified and discussed. The first group was on Technology. Utilities should consider required provisions capacity by properly maintaining and preserving the existing power plants to the extent practicable and taking into account growing demand, limits of energy conservation, and difficulties in finding new power plant sites. Generally, the extension of the life of nuclear power plant (e.g. from 40 years to 60 years) is an attractive option for utilities, as the marginal cost of most existing nuclear power plants is lower than that of almost all other power sources. It is also an attractive option for environmental protection. Consequently, PLIM has become an important issue in the context of the regulatory reform of the electricity markets. Therefore, the three main objectives of the Technology working group are: 1) Documenting how the safety of nuclear power plants being operated for the long-term has been confirmed, and suggesting ways of sharing this information. 2) Addressing development of advanced maintenance technologies necessary over the plant lifetime, and clarifying their technical challenges. 3) Suggesting potential areas of research and development that might, be necessary. Some potential examples of such research include: - improving the effectiveness of maintenance methods to assure detection of incipient faults; - providing cost effective preventive maintenance programmes; - furnishing systematic, cost-effective refurbishment programmes framed to be consistent with efforts to extend the time between re-fuelling; - developing a methodology that moves routine maintenance on-line without compromising safety. (author)

  19. Notes on quantum groups

    International Nuclear Information System (INIS)

    Pressley, A.; Chari, V.; Tata Inst. of Fundamental Research, Bombay

    1990-01-01

    The authors presents an introduction to quantum groups defined as a deformation of the universal enveloping algebra of a Lie algebra. After the description of Hopf algebras with some examples the approach of Drinfel'd and Jimbo is described, where the quantization of a Lie algebra represents a Hopf algebra, defined over the algebra of formal power series in an indetermined h. The authors show that this approach arises from a r-matrix, which satisfies the classical Yang-Baxter equation. As example quantum sl 2 is considered. Furthermore the approaches of Manin and Woroniwicz and the R-matrix approach are described. (HSI)

  20. Unilever Group : equity valuation

    OpenAIRE

    Pires, Susana Sofia Castelo

    2014-01-01

    The following dissertation has the purpose to value the Unilever Group, but more specifically Unilever N.V. being publicly traded in the Amsterdam Exchange Index. Unilever is seen as a global player and one of most successful and competitive fast-moving consumer goods companies. In order to valuate Unilever’s equity, a Discounted Cash Flow (DCF) approach is first carried out, since it is believed to be the most reliable methodology. The value estimated was €36.39, advising one to buy its s...

  1. Statistical Group Comparison

    CERN Document Server

    Liao, Tim Futing

    2011-01-01

    An incomparably useful examination of statistical methods for comparisonThe nature of doing science, be it natural or social, inevitably calls for comparison. Statistical methods are at the heart of such comparison, for they not only help us gain understanding of the world around us but often define how our research is to be carried out. The need to compare between groups is best exemplified by experiments, which have clearly defined statistical methods. However, true experiments are not always possible. What complicates the matter more is a great deal of diversity in factors that are not inde

  2. Renormalization Group Functional Equations

    CERN Document Server

    Curtright, Thomas L

    2011-01-01

    Functional conjugation methods are used to analyze the global structure of various renormalization group trajectories. With minimal assumptions, the methods produce continuous flows from step-scaling {\\sigma} functions, and lead to exact functional relations for the local flow {\\beta} functions, whose solutions may have novel, exotic features, including multiple branches. As a result, fixed points of {\\sigma} are sometimes not true fixed points under continuous changes in scale, and zeroes of {\\beta} do not necessarily signal fixed points of the flow, but instead may only indicate turning points of the trajectories.

  3. Grouping Notes Through Nodes

    DEFF Research Database (Denmark)

    Dove, Graham; Abildgaard, Sille Julie Jøhnk; Biskjær, Michael Mose

    , both individually and when grouped, and their role in categorisation in semantic long-term memory. To do this, we adopt a multimodal analytical approach focusing on interaction between humans, and between humans and artefacts, alongside language. We discuss in detail examples of four different...... externalisation functions served by Post-ItTM notes, and show how these functions are present in complex overlapping combinations rather than being discrete. We then show how the temporal development of Post-ItTM note interactions supports categorisation qualities of semantic long-term memory....

  4. Grouping Notes Through Nodes

    DEFF Research Database (Denmark)

    Dove, Graham; Abildgaard, Sille Julie; Biskjær, Michael Mose

    2017-01-01

    , both individually and when grouped, and their role in categorisation in semantic long-term memory. To do this, we adopt a multimodal analytical approach focusing on interaction between humans, and between humans and artefacts, alongside language. We discuss in detail examples of four different...... externalisation functions served by Post-ItTM notes, and show how these functions are present in complex overlapping combinations rather than being discrete. We then show how the temporal development of Post-ItTM note interactions supports categorisation qualities of semantic long-term memory....

  5. Groups and symmetry

    CERN Document Server

    Farmer, David W

    1995-01-01

    In most mathematics textbooks, the most exciting part of mathematics-the process of invention and discovery-is completely hidden from the reader. The aim of Groups and Symmetry is to change all that. By means of a series of carefully selected tasks, this book leads readers to discover some real mathematics. There are no formulas to memorize; no procedures to follow. The book is a guide: Its job is to start you in the right direction and to bring you back if you stray too far. Discovery is left to you. Suitable for a one-semester course at the beginning undergraduate level, there are no prerequ

  6. Theory and modeling group

    Science.gov (United States)

    Holman, Gordon D.

    1989-01-01

    The primary purpose of the Theory and Modeling Group meeting was to identify scientists engaged or interested in theoretical work pertinent to the Max '91 program, and to encourage theorists to pursue modeling which is directly relevant to data which can be expected to result from the program. A list of participants and their institutions is presented. Two solar flare paradigms were discussed during the meeting -- the importance of magnetic reconnection in flares and the applicability of numerical simulation results to solar flare studies.

  7. The OMERACT Ultrasound Group

    DEFF Research Database (Denmark)

    Terslev, Lene; Iagnocco, Annamaria; Bruyn, George A W

    2017-01-01

    OBJECTIVE: To provide an update from the Outcome Measures in Rheumatology (OMERACT) Ultrasound Working Group on the progress for defining ultrasound (US) minimal disease activity threshold at joint level in rheumatoid arthritis (RA) and for standardization of US application in juvenile idiopathic......) and power Doppler (PD). Synovial effusion (SE) was scored a binary variable. For JIA, a Delphi approach and subsequent validation in static images and patient-based exercises were used to developed preliminary definitions for synovitis and a scoring system. RESULTS: For minimal disease activity, 7% HC had...

  8. A village group, Trashibiola

    OpenAIRE

    Thomson, John, 1837-1921, photographer

    2003-01-01

    158 x 111 mm. Woodburytype. A view showing a group of villagers seated in a paved courtyard in front of a stonewalled house (the principal house in the village). The village is near the town of Paphos. The photograph appears in Thomson's 'Through Cyprus with the camera, in the autumn of 1878' (vol.2, London: Sampson Low, Marston, Searle, and Rivington, 1879). Thomson states that the purpose of the gathering was twofold: to welcome strangers to the village and to discuss a point of law c...

  9. Bevalac computer support group

    International Nuclear Information System (INIS)

    McParland, C.; Bronson, M.

    1985-01-01

    During the past year, a group was created and placed under the leadership of Charles McParland. This is an expansion of previous Bevalac software efforts and has responsibilities in three major hardware and software areas. The first area is the support of the existing data acquisition/analysis VAX 11/780s at the Bevalac. The second area is the continued support of present data acquisition programs. The third principal area of effort is the development of new data acquisition systems to meet the increasing needs of the Bevalac experimental program

  10. Social group utility maximization

    CERN Document Server

    Gong, Xiaowen; Yang, Lei; Zhang, Junshan

    2014-01-01

    This SpringerBrief explains how to leverage mobile users' social relationships to improve the interactions of mobile devices in mobile networks. It develops a social group utility maximization (SGUM) framework that captures diverse social ties of mobile users and diverse physical coupling of mobile devices. Key topics include random access control, power control, spectrum access, and location privacy.This brief also investigates SGUM-based power control game and random access control game, for which it establishes the socially-aware Nash equilibrium (SNE). It then examines the critical SGUM-b

  11. ATLAS Detector Interface Group

    CERN Multimedia

    Mapelli, L

    Originally organised as a sub-system in the DAQ/EF-1 Prototype Project, the Detector Interface Group (DIG) was an information exchange channel between the Detector systems and the Data Acquisition to provide critical detector information for prototype design and detector integration. After the reorganisation of the Trigger/DAQ Project and of Technical Coordination, the necessity to provide an adequate context for integration of detectors with the Trigger and DAQ lead to organisation of the DIG as one of the activities of Technical Coordination. Such an organisation emphasises the ATLAS wide coordination of the Trigger and DAQ exploitation aspects, which go beyond the domain of the Trigger/DAQ project itself. As part of Technical Coordination, the DIG provides the natural environment for the common work of Trigger/DAQ and detector experts. A DIG forum for a wide discussion of all the detector and Trigger/DAQ integration issues. A more restricted DIG group for the practical organisation and implementation o...

  12. Communication from ST Group

    CERN Multimedia

    TS Department

    2008-01-01

    In order to prepare the organization of the Open Days, please note that FM Group will not able to take into account either specific requests for waste collection from 2nd to 6th of April, either removal or PC transport requests between the 31st and the 11th of March. We kindly ask you to plan the collection of any type of waste and the urgent transport of office furniture or PC before the 31st of March. Waste collection requests shall be formulated contacting FM Support at 77777 or at the email address mailto:Fm.Support@cern.ch; removal of office furniture or PC transport requests must be made using the EDH ‘Transport request’ form selecting the "Removals" or the "PC transport" category from the drop-down menu. For any question concerning the waste sorting, please consult the following web address: http://dechets-waste.web.cern.ch/dechets-waste/. Thank you for your understanding and collaboration. TS/FM Group

  13. Social group and mobbing

    Directory of Open Access Journals (Sweden)

    Baltezarević Vesna

    2009-01-01

    Full Text Available Our reality, having been subject to the numerous social crises during the last decades of the 20th century, is characterized by frequent incidences of powerlessness and alienation. The man is more frequently a subject to loneliness and overcomes the feeling of worthlessness, no matter whether he considers himself an individual or a part of a whole larger social. Such an environment leads to development of aggression in all fields of ones life. This paper has as an objective the pointing out of the mental harassment that is manifested in the working environment. There is a prevalence of mobbing cases, as a mode of pathological communication. The result of this is that a person, subjected to this kind of abuse, is soon faced with social isolation. This research also aspires to initiate the need for social groups self-organization of which victims are part of. The reaction modality of a social group directly conditions the outcome of the deliberate social drama, one is subjected to it as a result of mobbing.

  14. Meningococcal group B vaccines.

    Science.gov (United States)

    Findlow, Jamie

    2013-06-01

    Meningococcal disease remains a devastating and feared infection with a significant morbidity and mortality profile. The successful impact of meningococcal capsular group C glyconconjugate vaccines introduced into the UK infant immunization schedule in 1999, has resulted in >80% of disease now being attributable to meningococcal capsular group B (MenB). MenB glyconconjugate vaccines are not immunogenic and hence, vaccine design has focused on sub-capsular antigens. Recently, a four component vaccine to combat MenB disease (4CMenB) has progressed through clinical development and was approved by the European Medicines Agency at the end of 2012. This vaccine has proven safe and immunogenic and has been predicted to provide protection against ~73% of the MenB disease from England and Wales. Recommendation/implementation of the vaccine into the UK infant schedule is currently being evaluated. 4CMenB has the potential to provide protection against a significant proportion of MenB disease in the UK which is currently unpreventable.

  15. Business working group

    International Nuclear Information System (INIS)

    Doroshuk, B.W.

    2000-01-01

    The workshop of 26-27 june 2000, on nuclear power Plant LIfe Management (PLIM), also included working groups in which major issues facing PLIM activities for nuclear power plants were identified and discussed. The third group was on Business. The discussion concerned the following points: There are concerns about retaining experienced/trained personnel, and maintaining a good working relationship among them, as well as about the closure of research facilities, the reduction in staff numbers under increasing economic pressure and the lack of new nuclear power plant constructions. The marginal cost of producing electricity is lower for most existing nuclear power plants than for almost all other energy sources. Refurbishment costs are usually relatively small compared with new investments. The ongoing regulatory reform of the electricity market will bring increasing competition. Although PLIM has been carried out in many countries with favourable results, there are still uncertainties which affect business decisions regarding financial and market risks in PLIM activities. Recommendations were made. (author)

  16. Group Life Insurance

    CERN Multimedia

    2013-01-01

    The CERN Administration would like to remind you that staff members and fellows have the possibility to take out a life insurance contract on favourable terms through a Group Life Insurance.   This insurance is provided by the company Helvetia and is available to you on a voluntary basis. The premium, which varies depending on the age and gender of the person insured, is calculated on the basis of the amount of the death benefit chosen by the staff member/fellow and can be purchased in slices of 10,000 CHF.    The contract normally ends at the retirement age (65/67 years) or when the staff member/fellow leaves the Organization. The premium is deducted monthly from the payroll.   Upon retirement, the staff member can opt to maintain his membership under certain conditions.   More information about Group Life Insurance can be found at: Regulations (in French) Table of premiums The Pension Fund Benefit Service &...

  17. On the Brauer group

    International Nuclear Information System (INIS)

    Tankeev, Sergei G

    2000-01-01

    For an arithmetic model X of a Fermat surface or a hyperkahler variety with Betti number b 2 (V otimes k-bar)>3 over a purely imaginary number field k, we prove the finiteness of the l-components of Br'(X) for all primes l>>0. This yields a variant of a conjecture of M. Artin. If V is a smooth projective irregular surface over a number field k and V(k)≠ nothing, then the l-primary component of Br(V)/Br(k) is an infinite group for every prime l. Let A 1 →M 1 be the universal family of elliptic curves with a Jacobian structure of level N>=3 over a number field k supset of Q(e 2πi/N ). Assume that M 1 (k) ≠ nothing. If V is a smooth projective compactification of the surface A 1 , then the l-primary component of Br(V)/Br(M-bar 1 ) is a finite group for each sufficiently large prime l

  18. Biology task group

    International Nuclear Information System (INIS)

    Anon.

    1981-01-01

    The accomplishments of the task group studies over the past year are reviewed. The purposes of biological investigations, in the context of subseabed disposal, are: an evaluation of the dose to man; an estimation of effects on the ecosystem; and an estimation of the influence of organisms on and as barriers to radionuclide migration. To accomplish these ends, the task group adopted the following research goals: (1) acquire more data on biological accumulation of specific radionuclides, such as those of Tc, Np, Ra, and Sr; (2) acquire more data on transfer coefficients from sediment to organism; (3) Calculate mass transfer rates, construct simple models using them, and estimate collective dose commitment; (4) Identify specific pathways or transfer routes, determine the rates of transfer, and make dose limit calculations with simple models; (5) Calculate dose rates to and estimate irradiation effects on the biota as a result of waste emplacement, by reference to background irradiation calculations. (6) Examine the effect of the biota on altering sediment/water radionuclide exchange; (7) Consider the biological data required to address different accident scenarios; (8) Continue to provide the basic biological information for all of the above, and ensure that the system analysis model is based on the most realistic and up-to-date concepts of marine biologists; and (9) Ensure by way of free exchange of information that the data used in any model are the best currently available

  19. Doing focus group research

    DEFF Research Database (Denmark)

    Lindegaard, Laura Bang

    2014-01-01

    Scholars of ethnomethodologically informed discourse studies are often sceptical of the use of interview data such as focus group data. Some scholars quite simply reject interview data with reference to a general preference for so-called naturally occurring data. Other scholars acknowledge...... that interview data can be of some use if the distinction between natural and contrived data is given up and replaced with a distinction between interview data as topic or as resource. In greater detail, such scholars argue that interview data are perfectly adequate if the researcher wants to study the topic...... of interview interaction, but inadequate as data for studying phenomena that go beyond the phenomenon of interview interaction. Neither of these more and less sceptical positions are, on the face of it, surprising due to the ethnomethodological commitment to study social order as accomplished in situ...

  20. Group life insurance

    CERN Multimedia

    2013-01-01

    The CERN Administration wishes to inform staff members and fellows having taken out optional life insurance under the group contract signed by CERN that the following changes to the rules and regulations entered into force on 1 January 2013:   The maximum age for an active member has been extended from 65 to 67 years. The beneficiary clause now allows insured persons to designate one or more persons of their choice to be their beneficiary(-ies), either at the time of taking out the insurance or at a later date, in which case the membership/modification form must be updated accordingly. Beneficiaries must be clearly identified (name, first name, date of birth, address).   The membership/modification form is available on the FP website: http://fp.web.cern.ch/helvetia-life-insurance For further information, please contact: Valentina Clavel (Tel. 73904) Peggy Pithioud (Tel. 72736)

  1. End Group Modification

    DEFF Research Database (Denmark)

    Jahnsen, Rasmus O; Sandberg-Schaal, Anne; Frimodt-Møller, Niels

    2015-01-01

    Increased incidence of infections with multidrug-resistant bacterial strains warrants an intensive search for novel potential antimicrobial agents. Here, an antimicrobial peptide analogue with a cationic/hydrophobic alternating design displaying only moderate activity against Gram-positive pathog......Increased incidence of infections with multidrug-resistant bacterial strains warrants an intensive search for novel potential antimicrobial agents. Here, an antimicrobial peptide analogue with a cationic/hydrophobic alternating design displaying only moderate activity against Gram......, the most favorable hydrophobic activity-inducing moieties were found to be cyclohexylacetyl and pentafluorophenylacetyl groups, while the presence of a short PEG-like chain had no significant effect on activity. Introduction of cationic moieties conferred no effect or merely a moderate activity...

  2. Optimised Renormalisation Group Flows

    CERN Document Server

    Litim, Daniel F

    2001-01-01

    Exact renormalisation group (ERG) flows interpolate between a microscopic or classical theory and the corresponding macroscopic or quantum effective theory. For most problems of physical interest, the efficiency of the ERG is constrained due to unavoidable approximations. Approximate solutions of ERG flows depend spuriously on the regularisation scheme which is determined by a regulator function. This is similar to the spurious dependence on the ultraviolet regularisation known from perturbative QCD. Providing a good control over approximated ERG flows is at the root for reliable physical predictions. We explain why the convergence of approximate solutions towards the physical theory is optimised by appropriate choices of the regulator. We study specific optimised regulators for bosonic and fermionic fields and compare the optimised ERG flows with generic ones. This is done up to second order in the derivative expansion at both vanishing and non-vanishing temperature. An optimised flow for a ``proper-time ren...

  3. Graphs, groups and surfaces

    CERN Document Server

    White, AT

    1985-01-01

    The field of topological graph theory has expanded greatly in the ten years since the first edition of this book appeared. The original nine chapters of this classic work have therefore been revised and updated. Six new chapters have been added, dealing with: voltage graphs, non-orientable imbeddings, block designs associated with graph imbeddings, hypergraph imbeddings, map automorphism groups and change ringing.Thirty-two new problems have been added to this new edition, so that there are now 181 in all; 22 of these have been designated as ``difficult'''' and 9 as ``unsolved''''. Three of the four unsolved problems from the first edition have been solved in the ten years between editions; they are now marked as ``difficult''''.

  4. Quantum Secure Group Communication.

    Science.gov (United States)

    Li, Zheng-Hong; Zubairy, M Suhail; Al-Amri, M

    2018-03-01

    We propose a quantum secure group communication protocol for the purpose of sharing the same message among multiple authorized users. Our protocol can remove the need for key management that is needed for the quantum network built on quantum key distribution. Comparing with the secure quantum network based on BB84, we show our protocol is more efficient and securer. Particularly, in the security analysis, we introduce a new way of attack, i.e., the counterfactual quantum attack, which can steal information by "invisible" photons. This invisible photon can reveal a single-photon detector in the photon path without triggering the detector. Moreover, the photon can identify phase operations applied to itself, thereby stealing information. To defeat this counterfactual quantum attack, we propose a quantum multi-user authorization system. It allows us to precisely control the communication time so that the attack can not be completed in time.

  5. Working Group Report: Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Artuso, M.; et al.,

    2013-10-18

    Sensors play a key role in detecting both charged particles and photons for all three frontiers in Particle Physics. The signals from an individual sensor that can be used include ionization deposited, phonons created, or light emitted from excitations of the material. The individual sensors are then typically arrayed for detection of individual particles or groups of particles. Mounting of new, ever higher performance experiments, often depend on advances in sensors in a range of performance characteristics. These performance metrics can include position resolution for passing particles, time resolution on particles impacting the sensor, and overall rate capabilities. In addition the feasible detector area and cost frequently provides a limit to what can be built and therefore is often another area where improvements are important. Finally, radiation tolerance is becoming a requirement in a broad array of devices. We present a status report on a broad category of sensors, including challenges for the future and work in progress to solve those challenges.

  6. Representation Theory of Algebraic Groups and Quantum Groups

    CERN Document Server

    Gyoja, A; Shinoda, K-I; Shoji, T; Tanisaki, Toshiyuki

    2010-01-01

    Invited articles by top notch expertsFocus is on topics in representation theory of algebraic groups and quantum groupsOf interest to graduate students and researchers in representation theory, group theory, algebraic geometry, quantum theory and math physics

  7. Oklo working group meeting

    International Nuclear Information System (INIS)

    Von Maravic, H.

    1993-01-01

    Natural analogue studies have been carried out for several years in the framework of the European Community's R and D programme on radioactive waste; and within its recent fourth five-year programme on 'Management and storage of radioactive waste (1990-94)' the Community is participating in the Oklo study, natural analogue for transfer processes in a geological repository. The Oklo project is coordinated by CEA-IPSN (F) and involves laboratories from several CEA directorates (IPSN, DTA and DCC) which collaborate with other institutions from France: CREGU, Nancy; CNRS, Strasbourg and ENSMD, Fontainebleau. Moreover, institutes from non-EC member States are also taking part in the Oklo study. The second joint CEC-CEA progress meeting of the Oklo Working Group was held in April 1992 in Brussels and gave the possibility of reviewing and discussing progress made since its first meeting in February 1991 at CEA in Fontenay-aux-Roses. About 40 participants from 15 laboratories and organizations coming from France, Canada, Gabon, Japan, Sweden and the USA underline the great interest in the ongoing research activities. The meeting focused on the different tasks within the CEC-CEA Oklo project concerning (i) field survey and sampling, (ii) characterization of the source term, (iii) studies of the petrographical and geochemical system, and (iv) studies of the hydrogeological system and hydrodynamic modelling. (author) 17 papers are presented

  8. The Liabilities Management Group

    International Nuclear Information System (INIS)

    Whitehead, A.W.

    1998-01-01

    The Liabilities Management Group (LMG) was initiated by DTI. It is a cooperative forum which was set up in 1995. The current participants are DTI, UKAEA, NLM (for BNFL), MOD and Magnox Electric. The LMG was initiated to produce closer cooperation between public sector liability management organizations, achieve more cost-effective management of UK nuclear liabilities and enhance development of the UK nuclear decommissioning and waste management strategy. The objectives are to compare practices between liabilities management organizations discuss the scope for collaboration identify priority areas for possible collaboration agree action plans for exploring and undertaking such collaboration.Four task forces have been formed to look at specific areas (R and D, safety, contracts, and project management) and each reports separately to the LMG. The LMG has achieved its original aim of bringing together those with public sector liability management responsibilities. All participants feel that the LMG has been useful and that it should continue. Looking to the future, there is a continuing need for the LMG to facilitate removal of barriers to the achievement of best value for money. The LMG might also consider addressing the 'business process' elements that a liability management organization must be good at in order to define best practice in these. (author)

  9. CORRELATION BETWEEN GROUP LOCAL DENSITY AND GROUP LUMINOSITY

    Energy Technology Data Exchange (ETDEWEB)

    Deng Xinfa [School of Science, Nanchang University, Jiangxi 330031 (China); Yu Guisheng [Department of Natural Science, Nanchang Teachers College, Jiangxi 330103 (China)

    2012-11-10

    In this study, we investigate the correlation between group local number density and total luminosity of groups. In four volume-limited group catalogs, we can conclude that groups with high luminosity exist preferentially in high-density regions, while groups with low luminosity are located preferentially in low-density regions, and that in a volume-limited group sample with absolute magnitude limit M{sub r} = -18, the correlation between group local number density and total luminosity of groups is the weakest. These results basically are consistent with the environmental dependence of galaxy luminosity.

  10. Group Counseling in the Schools

    Science.gov (United States)

    Perusse, Rachelle; Goodnough, Gary E.; Lee, Vivian V.

    2009-01-01

    Group counseling is an effective intervention when working in a school setting. In this article, the authors discuss the different kinds of groups offered in schools, types of group interventions, strategies to use in forming groups, and how to collaborate with others in the school. Because leading groups in schools is a specialized skill, the…

  11. Naive Theories of Social Groups

    Science.gov (United States)

    Rhodes, Marjorie

    2012-01-01

    Four studies examined children's (ages 3-10, Total N = 235) naive theories of social groups, in particular, their expectations about how group memberships constrain social interactions. After introduction to novel groups of people, preschoolers (ages 3-5) reliably expected agents from one group to harm members of the other group (rather than…

  12. Making Cooperative Learning Groups Work.

    Science.gov (United States)

    Hawley, James; De Jong, Cherie

    1995-01-01

    Discusses the use of cooperative-learning groups with middle school students. Describes cooperative-learning techniques, including group roles, peer evaluation, and observation and monitoring. Considers grouping options, including group size and configuration, dyads, the think-pair-share lecture, student teams achievement divisions, jigsaw groups,…

  13. Fermilab Steering Group Report

    Energy Technology Data Exchange (ETDEWEB)

    Beier, Eugene; /Pennsylvania U.; Butler, Joel; /Fermilab; Dawson, Sally; /Brookhaven; Edwards, Helen; /Fermilab; Himel, Thomas; /SLAC; Holmes, Stephen; /Fermilab; Kim, Young-Kee; /Fermilab /Chicago U.; Lankford, Andrew; /UC, Irvine; McGinnis, David; /Fermilab; Nagaitsev, Sergei; /Fermilab; Raubenheimer, Tor; /SLAC /Fermilab

    2007-01-01

    The Fermilab Steering Group has developed a plan to keep U.S. accelerator-based particle physics on the pathway to discovery, both at the Terascale with the LHC and the ILC and in the domain of neutrinos and precision physics with a high-intensity accelerator. The plan puts discovering Terascale physics with the LHC and the ILC as Fermilab's highest priority. While supporting ILC development, the plan creates opportunities for exciting science at the intensity frontier. If the ILC remains near the Global Design Effort's technically driven timeline, Fermilab would continue neutrino science with the NOVA experiment, using the NuMI (Neutrinos at the Main Injector) proton plan, scheduled to begin operating in 2011. If ILC construction must wait somewhat longer, Fermilab's plan proposes SNuMI, an upgrade of NuMI to create a more powerful neutrino beam. If the ILC start is postponed significantly, a central feature of the proposed Fermilab plan calls for building an intense proton facility, Project X, consisting of a linear accelerator with the currently planned characteristics of the ILC combined with Fermilab's existing Recycler Ring and the Main Injector accelerator. The major component of Project X is the linac. Cryomodules, radio-frequency distribution, cryogenics and instrumentation for the linac are the same as or similar to those used in the ILC at a scale of about one percent of a full ILC linac. Project X's intense proton beams would open a path to discovery in neutrino science and in precision physics with charged leptons and quarks. World-leading experiments would allow physicists to address key questions of the Quantum Universe: How did the universe come to be? Are there undiscovered principles of nature: new symmetries, new physical laws? Do all the particles and forces become one? What happened to the antimatter? Building Project X's ILC-like linac would offer substantial support for ILC development by accelerating the

  14. Linear deformations of discrete groups and constructions of multivalued groups

    International Nuclear Information System (INIS)

    Yagodovskii, Petr V

    2000-01-01

    We construct deformations of discrete multivalued groups described as special deformations of their group algebras in the class of finite-dimensional associative algebras. We show that the deformations of ordinary groups producing multivalued groups are defined by cocycles with coefficients in the group algebra of the original group and obtain classification theorems on these deformations. We indicate a connection between the linear deformations of discrete groups introduced in this paper and the well-known constructions of multivalued groups. We describe the manifold of three-dimensional associative commutative algebras with identity element, fixed basis, and a constant number of values. The group algebras of n-valued groups of order three (three-dimensional n-group algebras) form a discrete set in this manifold

  15. Group B Streptococcus and Pregnancy

    Science.gov (United States)

    ... B Strep and Pregnancy • What is group B streptococcus (GBS)? • What does it mean to be colonized ... planned cesarean birth? •Glossary What is group B streptococcus (GBS)? Group B streptococcus is one of the ...

  16. Harmonic Analysis and Group Representation

    CERN Document Server

    Figa-Talamanca, Alessandro

    2011-01-01

    This title includes: Lectures - A. Auslander, R. Tolimeri - Nilpotent groups and abelian varieties, M Cowling - Unitary and uniformly bounded representations of some simple Lie groups, M. Duflo - Construction de representations unitaires d'un groupe de Lie, R. Howe - On a notion of rank for unitary representations of the classical groups, V.S. Varadarajan - Eigenfunction expansions of semisimple Lie groups, and R. Zimmer - Ergodic theory, group representations and rigidity; and, Seminars - A. Koranyi - Some applications of Gelfand pairs in classical analysis.

  17. Topological K-Kolmogorov groups

    International Nuclear Information System (INIS)

    Abd El-Sattar, A. Dabbour.

    1987-07-01

    The idea of the K-groups was used to define K-Kolmogorov homology and cohomology (over pairs of coefficient groups) which are descriptions of certain modifications of the Kolmogorov groups. The present work is devoted to the study of the topological properties of the K-Kolmogorov groups which lie at the root of the group duality based essentially upon Pontrjagin's concept of group multiplication. 14 refs

  18. Post-Disaster Social Justice Group Work and Group Supervision

    Science.gov (United States)

    Bemak, Fred; Chung, Rita Chi-Ying

    2011-01-01

    This article discusses post-disaster group counseling and group supervision using a social justice orientation for working with post-disaster survivors from underserved populations. The Disaster Cross-Cultural Counseling model is a culturally responsive group counseling model that infuses social justice into post-disaster group counseling and…

  19. Group Leader Development: Effects of Personal Growth and Psychoeducational Groups

    Science.gov (United States)

    Ohrt, Jonathan H.; Robinson, E. H., III; Hagedorn, W. Bryce

    2013-01-01

    The purpose of this quasi-experimental study was to compare the effects of personal growth groups and psychoeducational groups on counselor education students' (n = 74) empathy and group leader self-efficacy. Additionally, we compared the degree to which participants in each group valued: (a) cohesion, (b) catharsis, and (c) insight. There were no…

  20. Feminist Principles in Survivor's Groups: Out-of-Group Contact.

    Science.gov (United States)

    Rittenhouse, JoAn

    1997-01-01

    Illustrates the value of theoretical concepts from Feminist Therapy in the group treatment of women survivors. Theoretical underpinnings are supported using data taken from clinical experience and by examining group themes and out-of-group contact developed from the case sample. Principles regarding feminist groups are proposed. (RJM)

  1. Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

    KAUST Repository

    Anua, N. Najwa

    2013-08-20

    Exchange correlation (XC) energy functionals play a vital role in the efficiency of density functional theory (DFT) calculations, more soundly in the calculation of fundamental electronic energy bandgap. In the present DFT study of III-arsenides, we investigate the implications of XC-energy functional and corresponding potential on the structural, electronic and optical properties of XAs (X = B, Al, Ga, In). Firstly we report and discuss the optimized structural lattice parameters and the band gap calculations performed within different non-local XC functionals as implemented in the DFT-packages: WIEN2k, CASTEP and SIESTA. These packages are representative of the available code in ab initio studies. We employed the LDA, GGA-PBE, GGA-WC and mBJ-LDA using WIEN2k. In CASTEP, we employed the hybrid functional, sX-LDA. Furthermore LDA, GGA-PBE and meta-GGA were employed using SIESTA code. Our results point to GGA-WC as a more appropriate approximation for the calculations of structural parameters. However our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice agreement with the experimental measurements in addition to other theoretical results. © 2013 IOP Publishing Ltd.

  2. Study and characterization of semi-conductor materials III-V for their applications to the ionizing radiation detection

    International Nuclear Information System (INIS)

    Moulin, H.

    1989-01-01

    This work is the study of photoconduction in volume of gallium arsenide and of indium phosphide doped with iron for their applications to X-ray detection which is carried out directly in the material. After having recalled the physical characterization of materials and the principle of photoconduction, we describe two informatic simulations. The first supposes the spatial uniformity of the electric field on the semiconductor, the second takes the spatial and temporal variations of the field into consideration. Then we show the advantage of a first irradiation to neutrons of the photoconductors. With the gallium arsenide there is swiftness improvement of the detectors to the detriment of the sensitivity. The second part studies first the characterizations in the obscurity of the photoconductors according to the electric polarization field and to the neutron dose they received before and then their characterizations under X radiation. 77 refs., 221 figs., 33 tabs., 6 photos., 3 annexes

  3. A comparative TCAD assessment of III-V channel materials for future high speed and low power logic applications

    Science.gov (United States)

    Gomes, U. P.; Takhar, K.; Ranjan, K.; Rathi, S.; Biswas, D.

    2015-02-01

    In this work, by means physics based drift-diffusion simulations, three different narrow band gap semiconductors; InAs, InSb and In0.53Ga0.47As, and their associated heterostructures have been studied for future high speed and low power logic applications. It is observed that In0.53Ga0.47As has higher immunity towards short channel effects with low DIBL and sub-threshold slope than InSb and InAs. Also it is observed that for the same device geometry InSb has the highest drive current and lower intrinsic delay but its ION/IOFF figure of merit is deteriorated due to excess leakage current.

  4. On the applicability of the Natori formula to realistic multi-layer quantum well III-V FETs

    Science.gov (United States)

    Gili, A.; Xanthakis, J. P.

    2017-10-01

    We investigated the validity of the Natori formalism for realistic multi-layer quantum well FETs. We show that the assumption of a single layer (the channel) carrying all of the current density is far from reality in the sub-threshold region, where in fact most of the current density resides below the channel. Our analysis is based on comparing results of Natori calculations with experimental ones and on comparing with other first-principles calculations. If the Natori calculations are employed in the subthreshold region then a misleadingly small subthreshold slope would be obtained. We propose a way to remedy this inefficiency of this formulation so that it can be applicable to realistic many-layer devices. In particular we show that if the 1-dimensional quantum well of the Natori method enclosing the electron gas is expanded to include the supply layer-usually below the channel- and a proper ab initio potential is used to obtain its eigenvalues, then the Natori formula regains its validity.

  5. Hybrid III-V on Si grating as a broadband reflector and a high-Q resonator

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-01-01

    Hybrid grating (HG) with a high-refractive-index cap layer added onto a high contrast grating (HCG), can provide a high reflectance close 100 % over a broader wavelength range than HCGs, or work as a ultrahigh quality (Q) factor resonator. The reflection and resonance properties of HGs have been...

  6. Exploration of GaInT1P and Related T1-Containing III-V Alloys for Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Friedman, D.J.; Kibbler, A.E.; Kurtz, S.R.

    1998-11-02

    This paper discusses the results of an attempt to grow GaInTlP for application as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications as photovoltaics.

  7. Workshop on III-V Integrated Optoelectronics Held in Hilton Head, South Carolina on 28-30 March 1989

    Science.gov (United States)

    1990-01-01

    Barney De Loach AT&T Bell Laboratories MH 2D-351 600 Mountain Avenue Murray Hill, NJ 07974 Tel: 201-582-3382 Fax: 201-582-2451 Dr. M.A. Di Giuseppe AT...Park, NC 27709-2211 Tel: 919-549-0641 Fax: 919-549-9399 Professor T. Ken Gustafson Department of Electrical Engineering and Computer Sciences

  8. Exploration of GaInTlP and related Tl-containing III-V alloys for photovoltaics

    International Nuclear Information System (INIS)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.

    1999-01-01

    This paper discusses the results of an attempt to grow GaInTlP for application as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications as photovoltaics

  9. A direct measurement of g-factors in II-VI and III-V core-shell nanocrystals

    Science.gov (United States)

    Fradkin, L.; Langof, L.; Lifshitz, E.; Gaponik, N.; Rogach, A.; Eychmüller, A.; Weller, H.; Micic, O. I.; Nozik, A. J.

    2005-02-01

    This study describes a direct measurement of spectroscopic g-factors of photo-generated carriers in InP/ZnS and HgTe/Hg xCd 1-xTe(S) core-shell nanocrystals. The g-factor of trapped electrons and their spin-lattice versus radiative relaxation ratio ( T1/ τ) were measured by the use of continuous-wave and time-resolved optically detected magnetic resonance (ODMR) spectroscopy. The g-factors of excitons and donor-hole pairs were derived by the use of field-induced circular-polarized photoluminescence (CP-PL) spectroscopy. The combined information enabled to determine the g-factors of the individual band-edge electrons and holes. The results suggested an increase of the g-factor of the exciton and conduction electron with a decrease of the nanocrystal size.

  10. The extracellular matrix of Gadus morhua muscle contains types III, V, VI and IV collagens in addition to type I

    DEFF Research Database (Denmark)

    Brüggemann, Dagmar Adeline; Lawson, M.A.

    2005-01-01

    Confocal microscopy and immuno‐histochemistry were used to examine collagens in the extracellular matrix of cod Gadus morhua swimming muscle. In addition to the well known presence of type I fibrous collagen, types III and VI were also found in the myocommata and the endomysium. The beaded collagen......, type VI, was found in the endomysium and the network forming collagen, type IV, was found in the basement membrane. This is the first report of type V collagen in cod muscle and of types II, IV and VI in the muscle of a teleost....

  11. Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructures

    Directory of Open Access Journals (Sweden)

    Jacky Even

    2014-01-01

    Full Text Available Potentialities of density functional theory (DFT based methodologies are explored for photovoltaic materials through the modeling of the structural and optoelectronic properties of semiconductor hybrid organic-inorganic perovskites and GaAs/GaP heterostructures. They show how the properties of these bulk materials, as well as atomistic relaxations, interfaces, and electronic band-lineups in small heterostructures, can be thoroughly investigated. Some limitations of available standard DFT codes are discussed. Recent improvements able to treat many-body effects or based on density-functional perturbation theory are also reviewed in the context of issues relevant to photovoltaic technologies.

  12. Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

    KAUST Repository

    Anua, N. Najwa; Ahmed, Rashid; Shaari, Amiruddin; Saeed, Mohammad Alam; Ul Haq, Bakhtiar; Goumri-Said, Souraya

    2013-01-01

    our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice

  13. 30 CFR 57.22218 - Seals and stoppings (III, V-A, and V-B mines).

    Science.gov (United States)

    2010-07-01

    ... combustible materials or foam-type blocks shall be coated with at least one inch of construction plaster containing perlite and gypsum; at least one inch of expanded vermiculite, Portland cement and limestone; or other coatings with equivalent fire resistance. Stoppings constructed to phenolic foam blocks at least...

  14. Study and characterization of the III-V semiconductor materials for applications in the detection of ionizing radiation

    International Nuclear Information System (INIS)

    Moulin, H.

    1989-11-01

    The photoconduction in the bulk of the gallium arsenide (GaAs) and of the indium phosphide doped with iron (InP:Fe) is investigated. These compounds are to be applied in devices for X-ray detection. In such semiconductor materials the detection of X-rays occurs in the bulk. The photoconduction theory and the characteristics of the materials are reviewed. Two computerized simulation models for studying the response of the photoconductors to the radiation pulses are described. The results concerning the following measurements are presented: the characterization of GaAs and InP:Fe photoconductors, in obscurity, as a function of the electric field of polarization and of the neutrons dose; and their characterization under X-ray radiation [fr

  15. Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

    International Nuclear Information System (INIS)

    Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

    2008-01-01

    Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

  16. Simulation of the effects of rare earth elements presence in the growth of III-V compound layers

    Czech Academy of Sciences Publication Activity Database

    Šrobár, Fedor; Procházková, Olga

    2007-01-01

    Roč. 1, č. 10 (2007), s. 528-530 ISSN 1842-6573 R&D Projects: GA ČR GA102/06/0153 Institutional research plan: CEZ:AV0Z20670512 Keywords : semiconductor technology * rare earth compounds * getters Subject RIV: BM - Solid Matter Physics ; Magnetism

  17. Preliminary temperature Accelerated Life Test (ALT) on III-V commercial concentrator triple-junction solar cells

    OpenAIRE

    Espinet González, Pilar; Algora del Valle, Carlos; Orlando Carrillo, Vincenzo; Nuñez Mendoza, Neftali; Vázquez López, Manuel; Bautista Villares, Jesus; Xiugang, He; Barrutia Poncela, Laura; Rey-Stolle Prado, Ignacio; Araki, Kenji

    2012-01-01

    A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three e...

  18. Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, gap bowing, and effective masses

    DEFF Research Database (Denmark)

    Svane, Axel; Christensen, Niels Egede; Gorczyca, I.

    2010-01-01

    on the basis of the local approximation to density functional theory, although generally overestimated by 0.2–0.3 eV in comparison with experimental gap values. Details of the electronic energies and the effective masses including their pressure dependence are compared with available experimental information....... The band gap of InGaN2 is considerably smaller than what would be expected by linear interpolation implying a significant band gap bowing in InGaN alloys....

  19. Improved Electron Yield and Spin-Polarization from III-V Photocathodes Via Bias Enhanced Carrier Drift

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.; Bierman, John; Brachmann, Axel; Clendenin, James E.; Garwin, Edward; Kirby, Robert; Luh, Dah-An

    2005-01-01

    Spin-polarized electrons are commonly used in high energy physics. Future work will benefit from greater polarization. Polarizations approaching 90% have been achieved at the expense of yield. The primary paths to higher polarization are material design and electron transport. Our work addresses the latter. Photoexcited electrons may be preferentially emitted or suppressed by an electric field applied across the active region. We are tuning this forward bias for maximum polarization and yield, together with other parameters, e.g., doping profile. Preliminary measurements have been carried out on bulk and thin film GaAs. As expected, the yield change far from the bandgap is quite large for bulk material. The bias is applied to the bottom (non-activated) side of the cathode so that the accelerating potential as measured with respect to the ground potential chamber walls is unchanged for different front-to-back cathode bias values. The size of the bias to cause an appreciable effect is rather small reflecting the low drift kinetic energy in the zero bias case

  20. Epitaxial Growth, Surface, and Electronic Properties of Unconventional Semiconductors: RE-V/III-V Nanocomposites and Semiconducting Half Heusler Alloys

    Science.gov (United States)

    2014-09-01

    10.1103/PhysRevLett.45.494. [2] D.C. Tsui, H.L. Stormer , and A.C. Gossard. Two-dimensional magnetotransport in the extreme quantum limit. Phys. Rev. Lett...5] R. Dingle, H. L. Stormer , A. C. Gossard, and W. Wiegmann. Electron mobil- ities in modulation-doped semiconductor heterojunction superlattices