Best voltage bias-flipping strategy towards maximum piezoelectric power generation

International Nuclear Information System (INIS)

Liang, Junrui; Chung, Henry Shu-Hung

2013-01-01

In piezoelectric energy harvesting (PEH) systems, energy extracted from piezoelectric structure can be increased by making piezoelectric voltage in phase with vibration velocity and raising the voltage amplitude. Such voltage manipulations can be realized by synchronously flipping the piezoelectric voltage with respect to a bias dc source at every displacement extremum. Given that net harvested energy is obtained by deducting dissipated energy from total extracted energy, a sophisticated voltage bias-flipping scheme, which can maximize extracted energy at low dissipative cost, is required towards harvested energy optimization. This paper extends the state of the art by proposing the best bias-flip strategy, which is delivered on conceptual synchronized multiple bias-flip (SMBF) interface circuits. The proposed strategy coordinates both requirements on larger voltage change in synchronized instant for more extracted energy and smaller voltage change in each bias-flip action for less dissipated energy. It not only leads to further enhancement of harvesting capability beyond existing solutions, but also provides an unprecedented physical insight on maximum achievable harvesting capability of PEH interface circuit

The effect of dust on electron heating and dc self-bias in hydrogen diluted silane discharges

International Nuclear Information System (INIS)

Schüngel, E; Mohr, S; Iwashita, S; Schulze, J; Czarnetzki, U

2013-01-01

In capacitive hydrogen diluted silane discharges the formation of dust affects plasma processes used, e.g. for thin film solar cell manufacturing. Thus, a basic understanding of the interaction between plasma and dust is required to optimize such processes. We investigate a highly diluted silane discharge experimentally using phase-resolved optical emission spectroscopy to study the electron dynamics, laser light scattering on the dust particles to relate the electron dynamics with the spatial distribution of dust, and current and voltage measurements to characterize the electrical symmetry of the discharge via the dc self-bias. The measurements are performed in single and dual frequency discharges. A mode transition from the α-mode to a bulk drift mode (Ω-mode) is found, if the amount of silane and, thereby, the amount of dust and negative ions is increased. By controlling the electrode temperatures, the dust can be distributed asymmetrically between the electrodes via the thermophoretic force. This affects both the electron heating and the discharge symmetry, i.e. a dc self-bias develops in a single frequency discharge. Using the Electrical Asymmetry Effect (EAE), the dc self-bias can be controlled in dual frequency discharges via the phase angle between the two applied frequencies. The Ω-mode is observed for all phase angles and is explained by a simple model of the electron power dissipation. The model shows that the mode transition is characterized by a phase shift between the applied voltage and the electron conduction current, and that the plasma density profile can be estimated using the measured phase shift. The control interval of the dc self-bias obtained using the EAE will be shifted, if an asymmetric dust distribution is present. However, the width of the interval remains unchanged, because the dust distribution is hardly affected by the phase angle. (paper)

Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems.

Science.gov (United States)

Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong

2017-10-23

The impact of high-voltage-high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between -13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers.

Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

International Nuclear Information System (INIS)

Yu Jun-Ting; Chen Shu-Ming; Chen Jian-Jun; Huang Peng-Cheng; Song Rui-Qiang

2016-01-01

Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications. (paper)

Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2011-01-01

the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.

Effects of detector-source distance and detector bias voltage variations on time resolution of general purpose plastic scintillation detectors.

Science.gov (United States)

Ermis, E E; Celiktas, C

2012-12-01

Effects of source-detector distance and the detector bias voltage variations on time resolution of a general purpose plastic scintillation detector such as BC400 were investigated. (133)Ba and (207)Bi calibration sources with and without collimator were used in the present work. Optimum source-detector distance and bias voltage values were determined for the best time resolution by using leading edge timing method. Effect of the collimator usage on time resolution was also investigated. Copyright © 2012 Elsevier Ltd. All rights reserved.

Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

International Nuclear Information System (INIS)

Li Qi; Wang Weidong; Zhao Qiuming; Wei Xueming

2012-01-01

A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a lowon-resistance. (semiconductor devices)

Improvement of stability of sinusoidally driven atmospheric pressure plasma jet using auxiliary bias voltage

Directory of Open Access Journals (Sweden)

Hyun-Jin Kim

2015-12-01

Full Text Available In this study, we have proposed the auxiliary bias pulse scheme to improve the stability of atmospheric pressure plasma jets driven by an AC sinusoidal waveform excitation source. The stability of discharges can be significantly improved by the compensation of irregular variation in memory voltage due to the effect of auxiliary bias pulse. From the parametric study, such as the width, voltage, and onset time of auxiliary bias pulse, it has been demonstrated that the auxiliary bias pulse plays a significant role in suppressing the irregular discharges caused by the irregular variation in memory voltage and stable discharge can be initiated with the termination of the auxiliary bias pulse. As a result of further investigating the effects of the auxiliary pulse scheme on the jet stability under various process conditions such as the distance between the jet head and the counter electrode, and carrier gas flow, the jet stability can be improved by adjusting the amplitude and number of the bias pulse depending on the variations in the process conditions.

Effects of doping and bias voltage on the screening in AAA-stacked trilayer graphene

Science.gov (United States)

Mohammadi, Yawar; Moradian, Rostam; Shirzadi Tabar, Farzad

2014-09-01

We calculate the static polarization of AAA-stacked trilayer graphene (TLG) and study its screening properties within the random phase approximation (RPA) in all undoped, doped and biased regimes. We find that the static polarization of undoped AAA-stacked TLG is a combination of the doped and undoped single-layer graphene static polarization. This leads to an enhancement of the dielectric background constant along a Thomas-Fermi screening with the Thomas-Fermi wave vector which is independent of carrier concentrations and a 1/r3 power law decay for the long-distance behavior of the screened Coulomb potential. We show that effects of a bias voltage can be taken into account by a renormalization of the interlayer hopping energy to a new bias-voltage-dependent value, indicating screening properties of AAA-stacked TLG can be tuned electrically. We also find that screening properties of doped AAA-stacked TLG, when μ exceeds √{2}γ, are similar to that of doped SLG only depending on doping. While for μ<√{2}γ, its screening properties are combination of SLG and AA-stacked bilayer graphene screening properties and they are determined by doping and the interlayer hopping energy.

Additional ion bombardment in PVD processes generated by a superimposed pulse bias voltage

International Nuclear Information System (INIS)

Olbrich, W.; Kampschulte, G.

1993-01-01

The superimposed pulse bias voltage is a tool to apply an additional ion bombardment during deposition in physical vapour deposition (PVD) processes. It is generated by the combination of a d.c. ground voltage and a higher d.c. pulse voltage. Using a superimposed pulse bias voltage in ion-assisted PVD processes effects an additional all-around ion bombardment on the surface with ions of higher energy. Both metal and reactive or inert-gas ions are accelerated to the surface. The basic principles and important characteristics of this newly developed process such as ion fluxes or deposition rates are shown. Because of pulsing the high voltage, the deposition temperature does not increase much. The adhesion, structure, morphology and internal stresses are influenced by these additional ion impacts. The columnar growth of the deposited films could be suppressed by using the superimposed pulse bias voltage without increasing the deposition temperature. Different metallizations (Cr and Cu) produced by arc and sputter ion plating are investigated. Carbon-fibre-reinforced epoxy are coated with PVD copper films for further treatment in electrochemical processes. (orig.)

Linearity optimizations of analog ring resonator modulators through bias voltage adjustments

Science.gov (United States)

Hosseinzadeh, Arash; Middlebrook, Christopher T.

2018-03-01

The linearity of ring resonator modulator (RRM) in microwave photonic links is studied in terms of instantaneous bandwidth, fabrication tolerances, and operational bandwidth. A proposed bias voltage adjustment method is shown to maximize spur-free dynamic range (SFDR) at instantaneous bandwidths required by microwave photonic link (MPL) applications while also mitigating RRM fabrication tolerances effects. The proposed bias voltage adjustment method shows RRM SFDR improvement of ∼5.8 dB versus common Mach-Zehnder modulators at 500 MHz instantaneous bandwidth. Analyzing operational bandwidth effects on SFDR shows RRMs can be promising electro-optic modulators for MPL applications which require high operational frequencies while in a limited bandwidth such as radio-over-fiber 60 GHz wireless network access.

Generation of pure spin currents via spin Seebeck effect in self-biased hexagonal ferrite thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Peng; Ellsworth, David; Chang, Houchen; Janantha, Praveen; Richardson, Daniel; Phillips, Preston; Vijayasarathy, Tarah; Wu, Mingzhong, E-mail: mwu@lamar.colostate.edu [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States); Shah, Faisal [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-12-15

Light-induced generation of pure spin currents in a Pt(2.5 nm)/BaFe{sub 12}O{sub 19}(1.2 μm)/sapphire(0.5 mm) structure is reported. The BaFe{sub 12}O{sub 19} film had strong in-plane uniaxial anisotropy and was therefore self-biased. Upon exposure to light, a temperature difference (ΔT) was established across the BaFe{sub 12}O{sub 19} thickness that gave rise to a pure spin current in the Pt via the spin Seebeck effect. Via the inverse spin Hall effect, the spin current produced an electric voltage across one of the Pt lateral dimensions. The voltage varied with time in the same manner as ΔT and flipped its sign when the magnetization in BaFe{sub 12}O{sub 19} was reversed.

Quantum dynamics of a Josephson junction driven cavity mode system in the presence of voltage bias noise

Science.gov (United States)

Wang, Hui; Blencowe, M. P.; Armour, A. D.; Rimberg, A. J.

2017-09-01

We give a semiclassical analysis of the average photon number as well as photon number variance (Fano factor F ) for a Josephson junction (JJ) embedded microwave cavity system, where the JJ is subject to a fluctuating (i.e., noisy) bias voltage with finite dc average. Through the ac Josephson effect, the dc voltage bias drives the effectively nonlinear microwave cavity mode into an amplitude squeezed state (F Armour et al., Phys. Rev. Lett. 111, 247001 (2013), 10.1103/PhysRevLett.111.247001], but bias noise acts to degrade this squeezing. We find that the sensitivity of the Fano factor to bias voltage noise depends qualitatively on which stable fixed point regime the system is in for the corresponding classical nonlinear steady-state dynamics. Furthermore, we show that the impact of voltage bias noise is most significant when the cavity is excited to states with large average photon number.

Self-serving bias effects on job analysis ratings.

Science.gov (United States)

Cucina, Jeffrey M; Martin, Nicholas R; Vasilopoulos, Nicholas L; Thibodeuax, Henry F

2012-01-01

The purpose of this study was to investigate whether worker-oriented job analysis importance ratings were influenced by subject matter experts' (SME) standing (as measured by self-rated performance) on a competency. This type of relationship (whereby SMEs indicate that the traits they have are important for successful job performance) is an example of the self-serving bias (which is widely described in the social cognition literature and rarely described in the industrial/organizational psychology literature). An archival dataset covering 57 clerical and technical occupations with 26,682 participants was used. Support was found for the relationship between self-rated performance and importance ratings. Significant relationships (typically in the .30s) were observed for all 31 competencies that were studied. Controls were taken to account for common method bias and differences in the competencies required for each of the 57 occupations. Past research has demonstrated the effects of the self-serving bias on personality-based job analysis ratings. This study was the first to extend these findings to traditional job analysis, which covers other competencies in addition to personality. In addition, this study is the first to use operational field data instead of laboratory data.

Influence of X and gamma radiation and bias conditions on dropout voltage of voltage regulators serial transistors

International Nuclear Information System (INIS)

Vukic, V.; Osmokrovic, P.; Stankovic, S.; Kovacevic, M.

2005-01-01

Research topic presented in this paper is degradation of characteristics of low-dropout voltage regulator's serial transistor during exposure of device to the ionizing radiation. Voltage regulators were exposed to X and γ radiation in two modes: without bias conditions, and with bias conditions and load. Tested circuits are representatives of the first and the second generation of low-dropout voltage regulators, with lateral and vertical PNP serial transistor: LM2940 and L4940. Experimental results of output voltage and serial dropout voltage change in function of total ionizing dose, during the medium-dose-rate exposure, were presented. (author) [sr

Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles

Science.gov (United States)

Dey, Arka; Dhar, Joydeep; Sil, Sayantan; Jana, Rajkumar; Ray, Partha Pratim

2018-04-01

In this report, bias voltage-dependent dielectric and electron transport properties of ZnS nanoparticles were discussed. ZnS nanoparticles were synthesized by introducing a modified hydrothermal process. The powder XRD pattern indicates the phase purity, and field emission scanning electron microscope image demonstrates the morphology of the synthesized sample. The optical band gap energy (E g = 4.2 eV) from UV measurement explores semiconductor behavior of the synthesized material. The electrical properties were performed at room temperature using complex impedance spectroscopy (CIS) technique as a function of frequency (40 Hz-10 MHz) under different forward dc bias voltages (0-1 V). The CIS analysis demonstrates the contribution of bulk resistance in conduction mechanism and its dependency on forward dc bias voltages. The imaginary part of the impedance versus frequency curve exhibits the existence of relaxation peak which shifts with increasing dc forward bias voltages. The dc bias voltage-dependent ac and dc conductivity of the synthesized ZnS was studied on thin film structure. A possible hopping mechanism for electrical transport processes in the system was investigated. Finally, it is worth to mention that this analysis of bias voltage-dependent dielectric and transport properties of as-synthesized ZnS showed excellent properties for emerging energy applications.

Bias stress effect and recovery in organic field effect transistors : proton migration mechanism

NARCIS (Netherlands)

Sharma, A.; Mathijssen, S.G.J.; Kemerink, M.; Leeuw, de D.M.; Bobbert, P.A.; Bao, Z.; McCulloch, I.

2010-01-01

Organic field-effect transistors exhibit operational instabilities when a gate bias is applied. For a constant gate bias the threshold voltage shifts towards the applied gate bias voltage, an effect known as the bias-stress effect. We have performed a detailed experimental and theoretical study of

A voltage biased superconducting quantum interference device bootstrap circuit

International Nuclear Information System (INIS)

Xie Xiaoming; Wang Huiwu; Wang Yongliang; Dong Hui; Jiang Mianheng; Zhang Yi; Krause, Hans-Joachim; Braginski, Alex I; Offenhaeusser, Andreas; Mueck, Michael

2010-01-01

We present a dc superconducting quantum interference device (SQUID) readout circuit operating in the voltage bias mode and called a SQUID bootstrap circuit (SBC). The SBC is an alternative implementation of two existing methods for suppression of room-temperature amplifier noise: additional voltage feedback and current feedback. Two circuit branches are connected in parallel. In the dc SQUID branch, an inductively coupled coil connected in series provides the bias current feedback for enhancing the flux-to-current coefficient. The circuit branch parallel to the dc SQUID branch contains an inductively coupled voltage feedback coil with a shunt resistor in series for suppressing the preamplifier noise current by increasing the dynamic resistance. We show that the SBC effectively reduces the preamplifier noise to below the SQUID intrinsic noise. For a helium-cooled planar SQUID magnetometer with a SQUID inductance of 350 pH, a flux noise of about 3 μΦ 0 Hz -1/2 and a magnetic field resolution of less than 3 fT Hz -1/2 were obtained. The SBC leads to a convenient direct readout electronics for a dc SQUID with a wider adjustment tolerance than other feedback schemes.

An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage and I-R Drop

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2011-01-01

Full Text Available We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed threshold voltage and I-R drop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7% and low voltage drop of VDD power line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop of VDD power line using AC bias on OLED cathode.

Effect of negative bias voltage on CrN films deposited by arc ion plating. I. Macroparticles filtration and film-growth characteristics

International Nuclear Information System (INIS)

Wang Qimin; Kim, Kwang Ho

2008-01-01

Chromium nitride (CrN) films were deposited on Si wafers by arc ion plating (AIP) at various negative bias voltages and several groups of N 2 /Ar gas flux ratios and chamber gas pressures. The authors systematically investigated the influence of negative bias voltage on the synthesis, composition, microstructure, and properties of the AIP CrN films. In this part (Part I), the investigations were mainly focused on the macroparticle distributions and film-growth characteristics. The results showed that macroparticle densities on the film surfaces decreased greatly by applying negative bias voltage, which can be affected by partial pressure of N 2 and Ar gases. From the statistical analysis of the experimental results, they proposed a new hybrid mechanism of ion bombardment and electrical repulsion. Also, the growth of the AIP CrN films was greatly altered by applying negative bias voltage. By increasing the bias voltage, the film surfaces became much smoother and the films evolved from apparent columnar microstructures to an equiaxed microstructure. The impinging high-energy Cr ions accelerated by negative bias voltages were deemed the inherent reason for the evolution of growth characteristics

Non-equilibrium scaling analysis of the Kondo model with voltage bias

International Nuclear Information System (INIS)

Fritsch, Peter; Kehrein, Stefan

2009-01-01

The quintessential description of Kondo physics in equilibrium is obtained within a scaling picture that shows the buildup of Kondo screening at low temperature. For the non-equilibrium Kondo model with a voltage bias, the key new feature are decoherence effects due to the current across the impurity. In the present paper, we show how one can develop a consistent framework for studying the non-equilibrium Kondo model within a scaling picture of infinitesimal unitary transformations (flow equations). Decoherence effects appear naturally in third order of the β-function and dominate the Hamiltonian flow for sufficiently large voltage bias. We work out the spin dynamics in non-equilibrium and compare it with finite temperature equilibrium results. In particular, we report on the behavior of the static spin susceptibility including leading logarithmic corrections and compare it with the celebrated equilibrium result as a function of temperature.

Influence of surface losses and the self-pumping effect on current-voltage characteristics of a long Josephson junction

DEFF Research Database (Denmark)

Pankratov, A.L.; Sobolev, A.S.; Koshelets, V.P.

2007-01-01

We have numerically investigated the dynamics of a long linear Josephson tunnel junction with overlap geometry. Biased by a direct current (dc) and an applied dc magnetic field, the junction has important applications as tunable high frequency oscillator [flux-flow oscillator (FFO......) placed at both ends of the FFO. In our model, the damping parameter depends both on the spatial coordinate and on the amplitude of the ac voltage. In order to find the dc current-voltage curves, the damping parameter has to be calculated self-consistently by successive approximations and time integration...

Bias voltage dependence of a flux-sensitive Al/GaAs/Al (SNS) interferometer

DEFF Research Database (Denmark)

Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Hansen, Jørn Bindslev

1999-01-01

bias voltage the fabricated interferometers typically exhibit 3% sinusoidal modulation of the conductance as a function of a magnetic field applied perpendicular to the loop. The conductance modulation is caused by resonant Andreev states in the normal GaAs region of the device. With increasing bias...... voltage of the order of a few microvolts the device is driven out of resonance and the conductance oscillations are extinguished. However, at higher bias voltage corresponding to the superconducting energy gap of Al (178 mu V) the conductance oscillations reappear but with reduced amplitude...

Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium

International Nuclear Information System (INIS)

Zhu, Meiping; Yi, Kui; Arhilger, Detlef; Qi, Hongji; Shao, Jianda

2013-01-01

HfO 2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO 2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO 2 films at 1064 nm and 532 nm are dominated by the nodular-defect density in coatings, while the 355 nm LIDT is dominated by the film absorption. HfO 2 films with higher 1064 nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100 V. - Highlights: • HfO 2 films are evaporated with different Advanced Plasma Source (APS) bias voltages. • Properties of HfO 2 films are sensitive to APS bias voltage. • With a bias voltage of 100 V, HfO 2 coatings without any stress can be achieved. • Higher 1064 nm laser induced damage threshold is achieved at a bias voltage of 100 V

Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

Science.gov (United States)

Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

Field angle dependence of voltage-induced ferromagnetic resonance under DC bias voltage

International Nuclear Information System (INIS)

Shiota, Yoichi; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Suzuki, Yoshishige; Yuasa, Shinji

2016-01-01

We studied the rectification function of microwaves in CoFeB/MgO-based magnetic tunnel junctions using voltage-induced ferromagnetic resonance (FMR). Our findings reveal that the shape of the structure of the spectrum depends on the rotation angle of the external magnetic field, providing clear evidence that FMR dynamics are excited by voltage-induced magnetic anisotropy changes. Further, enhancement of the rectified voltage was demonstrated under a DC bias voltage. In our experiments, the highest microwave detection sensitivity obtained was 350 mV/mW, at an RF frequency of 1.0 GHz and field angle of θ_H=80°, ϕ_H=0°. The experimental results correlated with those obtained via simulation, and the calculated results revealed the magnetization dynamics at the resonance state. - Highlights: • Examined voltage-induced ferromagnetic resonance (FMR) under various field angles. • FMR dynamics are excited by voltage-induced magnetic anisotropy changes. • Microwave detection sensitivity depends on input RF and elevation angle. • Microwave detection sensitivity=350 mV/mW at RF=1.0 GHz, θ_H=80°, ϕ_H=0°.

In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

DEFF Research Database (Denmark)

Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

2003-01-01

Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...... a broad tunnelling current-overpotential range at a constant (large) bias voltage of +0.2 V. The current is found to be constant over a 0.25 V overpotential range, which covers roughly the range where the oxidised and reduced redox levels are located within the energy tip. STM contrast and apparent...... of previous theoretical work on in situ STM of redox molecules, to large bias voltages, \\eV(bias)\\ > E-r. Large bias voltages give tunnelling contrasts independent of the overpotential over a broad range, as both the oxidised and reduced redox levels are located within the 'energy tip' between the substrate...

Output pressure and harmonic characteristics of a CMUT as function of bias and excitation voltage

DEFF Research Database (Denmark)

Lei, Anders; Diederichsen, Søren Elmin; Hansen, Sebastian Molbech

2015-01-01

of the transmitted signal. The generation of intrinsic harmonics by the CMUT can be minimized by decreasing the excitation signal. This, however, leads to lower fundamental pressure which limits the desired generation of harmonics in the medium. This work examines the output pressure and harmonic characteristics...... of a CMUT as function of bias and excitation voltage. The harmonic to fundamental ratio of the surface pressures declines for decreasing excitation voltage and increasing bias voltage. The ratio, however, becomes unchanged for bias levels close to the pull-in voltage. The harmonic limitations of the CMUT...

[Negative bias on self-referent processing in depression: focused on mood congruent effects].

Science.gov (United States)

Tagami, Kyoko

2002-12-01

The purpose of this study was to investigate negative bias on self-referent processing in depression, focused on the mood congruent effects in a natural depressed state and an experimentally induced transient depressed mood state. In Experiment 1, autobiographical memories and self-relevant ratings of personality trait words were examined in a natural depressed state or non-depressed state, which were measured by Beck Depression Inventory. Results revealed the mood congruent effects on both tasks. In Experiment 2, the same tasks as Experiment 1 were conducted in a transient depressed mood state or non-depressed mood state, which were induced through listening music. Unlike Experiment 1, there were no effects in both tasks, and a positive bias was observed in both mood states. It was suggested that transient mood state did not bias self-referent processing in depression, and Beck's schema hypothesis was supported.

Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages

Science.gov (United States)

Kanai, Shun; Gajek, Martin; Worledge, D. C.; Matsukura, Fumihiro; Ohno, Hideo

2014-12-01

We measure homodyne-detected ferromagnetic resonance (FMR) induced by the electric-field effect in a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with perpendicular magnetic easy axis under dc bias voltages up to 0.1 V. From the bias dependence of the resonant frequency, we find that the first order perpendicular magnetic anisotropy is modulated by the applied electric field, whereas the second order component is virtually independent of the electric field. The lineshapes of the FMR spectra are bias dependent, which are explained by the combination of electric-field effect and reflection of the bias voltage from the MTJ.

The effects of self-focus on attentional biases in social anxiety:An ERP study.

Science.gov (United States)

Judah, Matt R; Grant, DeMond M; Carlisle, Nancy B

2016-06-01

Cognitive theories of social anxiety disorder suggest that biased attention plays a key role in maintaining symptoms. These biases include self-focus and attention to socially threatening stimuli in the environment. The goal of this study was to utilize ERPs that are elicited by a change detection task to examine biases in selective attention (i.e., N2pc) and working memory maintenance (i.e., contralateral delay activity; CDA). Additionally, the effect of self-focus was examined using false heart rate feedback. In support of the manipulation, self-focus cues resulted in greater self-reported self-consciousness and task interference, enhanced anterior P2 amplitude and reduced SPN amplitude. Moreover, P2 amplitude for self-focus cues was correlated with reduced task performance for socially anxious subjects only. The difference in P2 amplitude between self-focus and standard cues was correlated with social anxiety independent of depression. As hypothesized, socially anxious participants (n = 20) showed early selection and maintenance of disgust faces relative to neutral faces as indicated by the N2pc and CDA components. Nonanxious controls (n = 22) did not show these biases. During self-focus cues, controls showed marginal evidence of biased selection for disgust faces, whereas socially anxious subjects showed no bias in this condition. Controls showed an ipsilateral delay activity after being cued to attend to one hemifield. Overall, this study supports early and persistent attentional bias for social threat in socially anxious individuals. Furthermore, self-focus may disrupt these biases. These findings and supplementary data are discussed in light of cognitive models of social anxiety disorder, recent empirical findings, and treatment.

Effects of target bias voltage on indium tin oxide films deposited by high target utilisation sputtering

International Nuclear Information System (INIS)

Calnan, Sonya; Upadhyaya, Hari M.; Dann, Sandra E.; Thwaites, Mike J.; Tiwari, Ayodhya N.

2007-01-01

Indium tin oxide (ITO) films were deposited by reactive High Target Utilisation Sputtering (HiTUS) onto glass and polyimide substrates. The ion plasma was generated by an RF power source while the target bias voltage was varied from 300 V to 500 V using a separate DC power supply. The deposition rate, at constant target power, increased with DC target voltage due to increased ion energy reaching 34 nm/min at 500 V. All the films were polycrystalline and showed strong (400) and (222) reflections with the relative strength of latter increasing with target bias voltage. The resistivity was lowest at 500 V with values of 1.8 x 10 -4 Ω cm and 2.4 x 10 -4 Ω cm on glass and polyimide, respectively but was still less than 5 x 10 -4 Ω cm at 400 V. All films were highly transparent to visible light, (> 80%) but the NIR transmittance decreased with increasing target voltage due to higher free carrier absorption. Therefore, ITO films can be deposited onto semiconductor layers such as in solar cells, with minimal ion damage while maintaining low resistivity

The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

Science.gov (United States)

Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

2009-01-01

CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

Effect of substrate bias voltage on tensile properties of single crystal silicon microstructure fully coated with plasma CVD diamond-like carbon film

Science.gov (United States)

Zhang, Wenlei; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

2018-06-01

Tensile strength and strength distribution in a microstructure of single crystal silicon (SCS) were improved significantly by coating the surface with a diamond-like carbon (DLC) film. To explore the influence of coating parameters and the mechanism of film fracture, SCS microstructure surfaces (120 × 4 × 5 μm3) were fully coated by plasma enhanced chemical vapor deposition (PECVD) of a DLC at five different bias voltages. After the depositions, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), thermal desorption spectrometry (TDS), surface profilometry, atomic force microscope (AFM) measurement, and nanoindentation methods were used to study the chemical and mechanical properties of the deposited DLC films. Tensile test indicated that the average strength of coated samples was 13.2-29.6% higher than that of the SCS sample, and samples fabricated with a -400 V bias voltage were strongest. The fracture toughness of the DLC film was the dominant factor in the observed tensile strength. Deviations in strength were reduced with increasingly negative bias voltage. The effect of residual stress on the tensile properties is discussed in detail.

Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

DEFF Research Database (Denmark)

Gloos, K.; Utko, P.; Aagesen, M.

2006-01-01

We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our....... Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we...

The effect of metacognitive self on confirmation bias revealed in relation to community and competence

Directory of Open Access Journals (Sweden)

Brycz Hanna

2014-09-01

Full Text Available The main goal of our study was to investigate the role of insight into one’s own biases (metacognitive self in the process of hypothesis validation in accordance to the two fundamental social perception domains (community and competence on the example of confirmation bias. The study was conducted on a group of 593 participants with the use of a confirmation bias procedure, a free recall procedure and the Metacognitive Self scale. We manipulated with the domain and the value of information given to the respondents. We suspected that individuals with a high metacognitive self, in opposition to low metacognitive self ones, would not process the given information according to the two fundamental social perception domains. The results verified the existence of an interaction effect of the metacognitive self (MCS and the domain of the information given about a perceived person on the susceptibility to follow the confirmation bias. Contrary to the low metacognitive self individuals, who show a higher tendency for the confirmation bias within the competence than the community domain, persons with a high insight into their own biases express the same level of confirmation bias in no respect to the domain of the information. The value of the information has no significant influence.

A 50–60 GHz mm-wave rectifier with bulk voltage bias in 65-nm CMOS

NARCIS (Netherlands)

Gao, H.; Matters-Kammerer, M.; Harpe, P.; Baltus, P.

2016-01-01

This letter presents a 50∼60 GHz fully integrated 3-stage rectifier with bulk voltage bias for threshold voltage modulation in a 65-nm CMOS technology, which can be integrated in a mm-wave hybrid rectifier structure as the main rectifier. In this letter, the new technique of bulk voltage bias is

Regression Analysis of the Effect of Bias Voltage on Nano- and Macrotribological Properties of Diamond-Like Carbon Films Deposited by a Filtered Cathodic Vacuum Arc Ion-Plating Method

Directory of Open Access Journals (Sweden)

Shojiro Miyake

2014-01-01

Full Text Available Diamond-like carbon (DLC films are deposited by bend filtered cathodic vacuum arc (FCVA technique with DC and pulsed bias voltage. The effects of varying bias voltage on nanoindentation and nanowear properties were evaluated by atomic force microscopy. DLC films deposited with DC bias voltage of −50 V exhibited the greatest hardness at approximately 50 GPa, a low modulus of dissipation, low elastic modulus to nanoindentation hardness ratio, and high nanowear resistance. Nanoindentation hardness was positively correlated with the Raman peak ratio Id/Ig, whereas wear depth was negatively correlated with this ratio. These nanotribological properties highly depend on the films’ nanostructures. The tribological properties of the FCVA-DLC films were also investigated using a ball-on-disk test. The average friction coefficient of DLC films deposited with DC bias voltage was lower than that of DLC films deposited with pulse bias voltage. The friction coefficient calculated from the ball-on-disk test was correlated with the nanoindentation hardness in dry conditions. However, under boundary lubrication conditions, the friction coefficient and specific wear rate had little correlation with nanoindentation hardness, and wear behavior seemed to be influenced by other factors such as adhesion strength between the film and substrate.

A high PSRR Class-D audio amplifier IC based on a self-adjusting voltage reference

OpenAIRE

Huffenus , Alexandre; Pillonnet , Gaël; Abouchi , Nacer; Goutti , Frédéric; Rabary , Vincent; Cittadini , Robert

2010-01-01

International audience; In a wide range of applications, audio amplifiers require a large Power Supply Rejection Ratio (PSRR) that the current Class-D architecture cannot reach. This paper proposes a self-adjusting internal voltage reference scheme that sets the bias voltages of the amplifier without losing on output dynamics. This solution relaxes the constraints on gain and feedback resistors matching that were previously the limiting factor for the PSRR. Theory of operation, design and IC ...

Influence of bias voltage on the stability of CsI photocathodes exposed to air

CERN Document Server

Nitti, M A; Nappi, E; Singh, B K; Valentini, A

2002-01-01

We describe a possible correlation between the bias voltage applied to the substrate during the growth of CsI photocathodes and the variation of quantum efficiency (QE) after one day exposure to humid air. It was found that fresh samples are much less sensitive to humid air when a high negative bias voltage was applied during film growth. A model based on surface film interaction with water molecules is presented for the observed effect. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements have been performed to examine, respectively, the bulk structure and the surface of fresh and exposed CsI samples. Also reported are transmittance measurements for fresh and aged CsI samples in the wavelength range 190-850 nm.

Relationship between bias voltage and microstructure as well as properties of CrAlYN films

International Nuclear Information System (INIS)

Fu Ying-Ying; Li Hong-Xuan; Ji Li; Liu Xiao-Hong; Zhou Hui-Di; Chen Jian-Min; Liu Liu

2015-01-01

In this work, a series of CrAlYN films doped with 1 at.% yttrium were deposited by unbalanced reactive magnetron sputtering under different bias voltages. The effects of bias voltage on microstructure and properties of the CrAlYN films were subsequently investigated. It is found that all the as-deposited films have similar chemical composition and crystalline structure. However, the bias voltage has significant impact on the mechanical properties and oxidation resistance of the resulting films. Namely, the film deposited at 100 V has the highest hardness and best oxidation resistance, which are mainly attributed to its denser structure and higher Al content than others. In addition, the film obtained at 100 V exhibits superior oxidation resistance even at 1000 °C, and good friction and wear properties at 600 and 800 °C, and the latter two are mainly ascribed to the formation of compact transfer layer on the worn surfaces. However, this film experienced obvious wear loss at low testing temperatures (i.e., 200 and 400 °C) due to the serious abrasive wear. (paper)

Investigations of a voltage-biased microwave cavity for quantum measurements of nanomechanical resonators

Science.gov (United States)

Rouxinol, Francisco; Hao, Hugo; Lahaye, Matt

2015-03-01

Quantum electromechanical systems incorporating superconducting qubits have received extensive interest in recent years due to their promising prospects for studying fundamental topics of quantum mechanics such as quantum measurement, entanglement and decoherence in new macroscopic limits, also for their potential as elements in technological applications in quantum information network and weak force detector, to name a few. In this presentation we will discuss ours efforts toward to devise an electromechanical circuit to strongly couple a nanomechanical resonator to a superconductor qubit, where a high voltage dc-bias is required, to study quantum behavior of a mechanical resonator. Preliminary results of our latest generation of devices integrating a superconductor qubit into a high-Q voltage biased microwave cavities are presented. Developments in the circuit design to couple a mechanical resonator to a qubit in the high-Q voltage bias CPW cavity is discussed as well prospects of achieving single-phonon measurement resolution. National Science Foundation under Grant No. DMR-1056423 and Grant No. DMR-1312421.

The Effect of Bias Voltage and Gas Pressure on the Structure, Adhesion and Wear Behavior of Diamond Like Carbon (DLC Coatings With Si Interlayers

Directory of Open Access Journals (Sweden)

Liam Ward

2014-04-01

Full Text Available In this study diamond like carbon (DLC coatings with Si interlayers were deposited on 316L stainless steel with varying gas pressure and substrate bias voltage using plasma enhanced chemical vapor deposition (PECVD technology. Coating and interlayer thickness values were determined using X-ray photoelectron spectroscopy (XPS which also revealed the presence of a gradient layer at the coating substrate interface. Coatings were evaluated in terms of the hardness, elastic modulus, wear behavior and adhesion. Deposition rate generally increased with increasing bias voltage and increasing gas pressure. At low working gas pressures, hardness and modulus of elasticity increased with increasing bias voltage. Reduced hardness and modulus of elasticity were observed at higher gas pressures. Increased adhesion was generally observed at lower bias voltages and higher gas pressures. All DLC coatings significantly improved the overall wear resistance of the base material. Lower wear rates were observed for coatings deposited with lower bias voltages. For coatings that showed wear tracks considerably deeper than the coating thickness but without spallation, the wear behavior was largely attributed to deformation of both the coating and substrate with some cracks at the wear track edges. This suggests that coatings deposited under certain conditions can exhibit ultra high flexible properties.

Large self-biased and multi-peak magnetoelectric coupling in transducer of Pb(Zr,Ti)O3 plates and H-type magnetization-graded ferromagnetic fork

Science.gov (United States)

Shen, Yongchun; Ling, Zhihao; Lu, Caijiang

2015-12-01

This paper develops a self-biased magnetoelectric (ME) composite Metglas/H-type-FeNi/PZT (MHFP) of H-type magnetization-graded Metglas/H-type-FeNi fork and piezoelectric Pb(Zr,Ti)O3 (PZT) plate. By using the magnetization-graded magnetostrictive layer and symmetrical H-type structure, giant self-biased ME coupling and multi-peak phenomenon are observed. The zero-biased ME voltage coefficient of MHFP composite reaches ˜63.8 V/cm Oe, which is ˜37.5 times higher than that of traditional FeNi/PZT laminate. The output ME voltage has a good near linear relation with Hac and is determined to be ˜5.1 V/Oe and ˜10.6 mV/Oe at ˜65 kHz and 1 kHz, respectively. These indicate that the proposed composite show promising applications for ME transducers and high-sensitivity self-biased magnetic sensors.

Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

Science.gov (United States)

Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.;

Simulations of momentum transfer process between solar wind plasma and bias voltage tethers of electric sail thruster

Science.gov (United States)

Xia, Guangqing; Han, Yajie; Chen, Liuwei; Wei, Yanming; Yu, Yang; Chen, Maolin

2018-06-01

The interaction between the solar wind plasma and the bias voltage of long tethers is the basic mechanism of the electric sail thruster. The momentum transfer process between the solar wind plasma and electric tethers was investigated using a 2D full particle PIC method. The coupled electric field distribution and deflected ion trajectory under different bias voltages were compared, and the influence of bias voltage on momentum transfer process was analyzed. The results show that the high potential of the bias voltage of long tethers will slow down, stagnate, reflect and deflect a large number of ions, so that ion cavities are formed in the vicinity of the tether, and the ions will transmit the axial momentum to the sail tethers to produce the thrust. Compared to the singe tether, double tethers show a better thrust performance.

Predictors of Biased Self-perception in Individuals with High Social Anxiety: The Effect of Self-consciousness in the Private and Public Self Domains

Directory of Open Access Journals (Sweden)

Henrik Nordahl

2017-07-01

Full Text Available “Biased self-perception,” the tendency to perceive one’s social performance as more negative than observers do, is characteristic of socially anxious individuals. Self-attention processes are hypothesised to underlie biased self-perception, however, different models emphasise different aspects of self-attention, with attention to the public aspects of the self being prominent. The current study aimed to investigate the relative contribution of two types of dispositional self-attention; public- and private self-consciousness to biased self-perception in a high (n = 48 versus a low (n = 48 social anxiety group undergoing an interaction task. The main finding was that private self-consciousness explained substantial and unique variance in biased negative self-perception in individuals with high social anxiety, while public self-consciousness did not. This relationship was independent of increments in state anxiety. Private self-consciousness appeared to have a specific association with bias related to overestimation of negative social performance rather than underestimation of positive social performance. The implication of this finding is that current treatment models of Social anxiety disorder might include broader aspects of self-focused attention, especially in the context of formulating self-evaluation biases.

Predictors of Biased Self-perception in Individuals with High Social Anxiety: The Effect of Self-consciousness in the Private and Public Self Domains.

Science.gov (United States)

Nordahl, Henrik; Plummer, Alice; Wells, Adrian

2017-01-01

"Biased self-perception," the tendency to perceive one's social performance as more negative than observers do, is characteristic of socially anxious individuals. Self-attention processes are hypothesised to underlie biased self-perception, however, different models emphasise different aspects of self-attention, with attention to the public aspects of the self being prominent. The current study aimed to investigate the relative contribution of two types of dispositional self-attention; public- and private self-consciousness to biased self-perception in a high ( n = 48) versus a low ( n = 48) social anxiety group undergoing an interaction task. The main finding was that private self-consciousness explained substantial and unique variance in biased negative self-perception in individuals with high social anxiety, while public self-consciousness did not. This relationship was independent of increments in state anxiety. Private self-consciousness appeared to have a specific association with bias related to overestimation of negative social performance rather than underestimation of positive social performance. The implication of this finding is that current treatment models of Social anxiety disorder might include broader aspects of self-focused attention, especially in the context of formulating self-evaluation biases.

Particle flows to shape and voltage surface discontinuities in the electron sheath surrounding a high voltage solar array in LEO

Science.gov (United States)

Metz, Roger N.

1991-01-01

This paper discusses the numerical modeling of electron flows from the sheath surrounding high positively biased objects in LEO (Low Earth Orbit) to regions of voltage or shape discontinuity on the biased surfaces. The sheath equations are derived from the Two-fluid, Warm Plasma Model. An equipotential corner and a plane containing strips of alternating voltage bias are treated in two dimensions. A self-consistent field solution of the sheath equations is outlined and is pursued through one cycle. The electron density field is determined by numerical solution of Poisson's equation for the electrostatic potential in the sheath using the NASCAP-LEO relation between electrostatic potential and charge density. Electron flows are calculated numerically from the electron continuity equation. Magnetic field effects are not treated.

Self-esteem modulates the time course of self-positivity bias in explicit self-evaluation.

Science.gov (United States)

Zhang, Hua; Guan, Lili; Qi, Mingming; Yang, Juan

2013-01-01

Researchers have suggested that certain individuals may show a self-positivity bias, rating themselves as possessing more positive personality traits than others. Previous evidence has shown that people evaluate self-related information in such a way as to maintain or enhance self-esteem. However, whether self-esteem would modulate the time course of self-positivity bias in explicit self-evaluation has never been explored. In the present study, 21 participants completed the Rosenberg self-esteem scale and then completed a task where they were instructed to indicate to what extent positive/negative traits described themselves. Behavioral data showed that participants endorsed positive traits as higher in self-relevance compared to the negative traits. Further, participants' self-esteem levels were positively correlated with their self-positivity bias. Electrophysiological data revealed smaller N1 amplitude and larger late positive component (LPC) amplitude to stimuli consistent with the self-positivity bias (positive-high self-relevant stimuli) when compared to stimuli that were inconsistent with the self-positivity bias (positive-low self-relevant stimuli). Moreover, only in individuals with low self-esteem, the latency of P2 was more pronounced in processing stimuli that were consistent with the self-positivity bias (negative-low self-relevant stimuli) than to stimuli that were inconsistent with the self-positivity bias (positive-low self-relevant stimuli). Overall, the present study provides additional support for the view that low self-esteem as a personality variable would affect the early attentional processing.

Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

2015-08-28

In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

Influence of substrate bias voltage on structure and properties of the CrAlN films deposited by unbalanced magnetron sputtering

Science.gov (United States)

Lv, Yanhong; Ji, Li; Liu, Xiaohong; Li, Hongxuan; Zhou, Huidi; Chen, Jianmin

2012-02-01

The CrAlN films were deposited on silicon and stainless steel substrates by unbalanced magnetron sputtering system. The influence of substrate bias on deposition rate, composition, structure, morphology and properties of the CrAlN films was investigated. The results showed that, with the increase of the substrate bias voltage, the deposition rate decreased accompanied by a change of the preferred orientation of the CrAlN film from (2 2 0) to (2 0 0). The grain size and the average surface roughness of the CrAlN films declined as the bias voltage increases above -100 V. The morphology of the films changed from obviously columnar to dense glass-like structure with the increase of the bias voltage from -50 to -250 V. Meanwhile, the films deposited at moderate bias voltage had better mechanical and tribological properties, while the films deposited at higher bias voltage showed better corrosion resistance. It was found that the corrosion resistance improvement was not only attributed to the low pinhole density of the film, but also to chemical composition of films.

Tuning of the microstructure, mechanical and tribological properties of a-C:H films by bias voltage of high frequency unipolar pulse

International Nuclear Information System (INIS)

Wang, Jia; Cao, Zhongyue; Pan, Fuping; Wang, Fuguo; Liang, Aimin; Zhang, Junyan

2015-01-01

Highlights: • a-C:H films deposited by high frequency unipolar pulse PECVD. • The film structures can be adjusted by bias voltage. • More graphitic structures form at high bias voltage. • The mechanical and tribological properties are improved by these structures. - Abstract: Amorphous hydrogenated carbon (a-C:H) films were prepared by high frequency unipolar pulse plasma-enhanced chemical vapor deposition in CH 4 , Ar, and H 2 atmosphere with the bias voltage in the range of −800 –−1600 V. The microstructures and mechanical properties of a-C:H films were investigated via high resolution transmission electron microscope (HRTEM), Raman spectroscopy, and Nanoindenter. The results reveal that the curved and straight graphitic microstructures appear in amorphous carbon matrix, and their contents increase obviously with the bias voltage. At the same time, the corresponding hardness decreases and elastic recovery increases, however even in such a case films still possess excellent mechanical properties. According to the tribological property characterization, we believe that the bias voltage also influences their tribological performances significantly, the higher the bias voltage finally gets, the lower the friction coefficient and wear rate occur. These results indicate that the microstructures of a-C:H films can be tuned efficiently by bias voltage and the films with good mechanical and tribological properties can be obtained at a higher range.

Tuning of the microstructure, mechanical and tribological properties of a-C:H films by bias voltage of high frequency unipolar pulse

Energy Technology Data Exchange (ETDEWEB)

Wang, Jia; Cao, Zhongyue; Pan, Fuping [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Fuguo, E-mail: fgwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Liang, Aimin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Junyan, E-mail: zhangjunyan@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2015-11-30

Highlights: • a-C:H films deposited by high frequency unipolar pulse PECVD. • The film structures can be adjusted by bias voltage. • More graphitic structures form at high bias voltage. • The mechanical and tribological properties are improved by these structures. - Abstract: Amorphous hydrogenated carbon (a-C:H) films were prepared by high frequency unipolar pulse plasma-enhanced chemical vapor deposition in CH{sub 4}, Ar, and H{sub 2} atmosphere with the bias voltage in the range of −800 –−1600 V. The microstructures and mechanical properties of a-C:H films were investigated via high resolution transmission electron microscope (HRTEM), Raman spectroscopy, and Nanoindenter. The results reveal that the curved and straight graphitic microstructures appear in amorphous carbon matrix, and their contents increase obviously with the bias voltage. At the same time, the corresponding hardness decreases and elastic recovery increases, however even in such a case films still possess excellent mechanical properties. According to the tribological property characterization, we believe that the bias voltage also influences their tribological performances significantly, the higher the bias voltage finally gets, the lower the friction coefficient and wear rate occur. These results indicate that the microstructures of a-C:H films can be tuned efficiently by bias voltage and the films with good mechanical and tribological properties can be obtained at a higher range.

Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device.

Science.gov (United States)

Khan, Muhammad Atif; Rathi, Servin; Park, Jinwoo; Lim, Dongsuk; Lee, Yoontae; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

2017-08-16

The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS 2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 10 3 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS 2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.

Explicit self-esteem mediates the relationship between implicit self-esteem and memory biases in major depression.

Science.gov (United States)

Romero, Nuria; Sanchez, Alvaro; Vázquez, Carmelo; Valiente, Carmen

2016-08-30

This study examines the relationships between explicit and implicit self-esteem and self-referent memory biases in depression. We specifically tested the hypothesis that implicit self-esteem would influence depression-related memory biases via its association with explicit self-esteem. Self-esteem was assessed in patients with a current Major Depressive Disorder (MDD; n=38) and in a control group of participants who had never experienced depression (ND; n=40) by using explicit (Rosenberg Self-esteem Questionnaire) and implicit (Go/No-go Association Task) measures. A self-referent processing task of negative and positive adjectives was used to assess memory bias. Our analyses revealed that participants diagnosed with MDD showed lower levels of both explicit and implicit self-esteem in comparison to ND participants. MDD compared to ND participants also recalled a greater number of depressed self-referent adjectives and lower recall of positive self-referent information. Mediation analyses showed an indirect effect of explicit self-esteem on the relationship between implicit self-esteem and depression-related memory biases in the MDD group. These findings suggest an association between implicit and explicit self-esteem in depression that may result in negative cognitive processing, as reflected by self-referent memory biases. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Liu, Kuan-Hsien; Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Wu, Ming-Siou; Hung, Yi-Syuan; Sze, Simon M. [Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Hung, Pei-Hua; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Yeh, Bo-Liang [Advanced Display Technology Research Center, AU Optronics, No. 1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsinchu 30078, Taiwan (China)

2014-03-31

This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation.

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

Science.gov (United States)

Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

2016-08-10

This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

Directory of Open Access Journals (Sweden)

Wen-Jeng Ho

2016-08-01

Full Text Available This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs and an indium-tin-oxide (ITO electrode with periodic holes (perforations under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

Science.gov (United States)

Degtiarenko, Pavel V [Williamsburg, VA; Popov, Vladimir E [Newport News, VA

2011-03-22

A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process

Science.gov (United States)

Song, Ki-Whan; Lee, Yong Kyu; Sim, Jae Sung; Kim, Kyung Rok; Lee, Jong Duk; Park, Byung-Gook; You, Young Sub; Park, Joo-On; Jin, You Seung; Kim, Young-Wug

2005-04-01

We propose a complementary self-biasing method which enables the single-electron transistor (SET)/complementary metal-oxide semiconductor (CMOS) hybrid multi-valued logics (MVLs) to operate well at high temperatures, where the peak-to-valley current ratio (PVCR) of the Coulomb oscillation markedly decreases. The new architecture is implemented with a few transistors by utilizing the phase control capability of the sidewall depletion gates in dual-gate single-electron transistors (DGSETs). The suggested scheme is evaluated by a SPICE simulation with an analytical DGSET model. Furthermore, we have developed a new process technology for the SET/CMOS hybrid systems. We have confirmed that both of the fabricated devices, namely, SET and CMOS transistors, exhibit the ideal characteristics for the complementary self-biasing scheme: the SET shows clear Coulomb oscillations with a 100 mV period and the CMOS transistors show a high voltage gain.

Strong mechanically induced effects in DC current-biased suspended Josephson junctions

Science.gov (United States)

McDermott, Thomas; Deng, Hai-Yao; Isacsson, Andreas; Mariani, Eros

2018-01-01

Superconductivity is a result of quantum coherence at macroscopic scales. Two superconductors separated by a metallic or insulating weak link exhibit the AC Josephson effect: the conversion of a DC voltage bias into an AC supercurrent. This current may be used to activate mechanical oscillations in a suspended weak link. As the DC-voltage bias condition is remarkably difficult to achieve in experiments, here we analyze theoretically how the Josephson effect can be exploited to activate and detect mechanical oscillations in the experimentally relevant condition with purely DC current bias. We unveil how changing the strength of the electromechanical coupling results in two qualitatively different regimes showing dramatic effects of the oscillations on the DC-voltage characteristic of the device. These include the appearance of Shapiro-type plateaus for weak coupling and a sudden mechanically induced retrapping for strong coupling. Our predictions, measurable in state-of-the-art experimental setups, allow the determination of the frequency and quality factor of the resonator using DC only techniques.

Self-face Captures, Holds, and Biases Attention.

Science.gov (United States)

Wójcik, Michał J; Nowicka, Maria M; Kotlewska, Ilona; Nowicka, Anna

2017-01-01

The implicit self-recognition process may take place already in the pre-attentive stages of perception. After a silent stimulus has captured attention, it is passed on to the attentive stage where it can affect decision making and responding. Numerous studies show that the presence of self-referential information affects almost every cognitive level. These effects may share a common and fundamental basis in an attentional mechanism, conceptualized as attentional bias: the exaggerated deployment of attentional resources to a salient stimulus. A gold standard in attentional bias research is the dot-probe paradigm. In this task, a prominent stimulus (cue) and a neutral stimulus are presented in different spatial locations, followed by the presentation of a target. In the current study we aimed at investigating whether the self-face captures, holds and biases attention when presented as a task-irrelevant stimulus. In two dot-probe experiments coupled with the event-related potential (ERP) technique we analyzed the following relevant ERPs components: N2pc and SPCN which reflect attentional shifts and the maintenance of attention, respectively. An inter-stimulus interval separating face-cues and probes (800 ms) was introduced only in the first experiment. In line with our predictions, in Experiment 1 the self-face elicited the N2pc and the SPCN component. In Experiment 2 in addition to N2pc, an attentional bias was observed. Our results indicate that unintentional self-face processing disables the top-down control setting to filter out distractors, thus leading to the engagement of attentional resources and visual short-term memory.

Self-face Captures, Holds, and Biases Attention

Directory of Open Access Journals (Sweden)

Michał J. Wójcik

2018-01-01

Full Text Available The implicit self-recognition process may take place already in the pre-attentive stages of perception. After a silent stimulus has captured attention, it is passed on to the attentive stage where it can affect decision making and responding. Numerous studies show that the presence of self-referential information affects almost every cognitive level. These effects may share a common and fundamental basis in an attentional mechanism, conceptualized as attentional bias: the exaggerated deployment of attentional resources to a salient stimulus. A gold standard in attentional bias research is the dot-probe paradigm. In this task, a prominent stimulus (cue and a neutral stimulus are presented in different spatial locations, followed by the presentation of a target. In the current study we aimed at investigating whether the self-face captures, holds and biases attention when presented as a task-irrelevant stimulus. In two dot-probe experiments coupled with the event-related potential (ERP technique we analyzed the following relevant ERPs components: N2pc and SPCN which reflect attentional shifts and the maintenance of attention, respectively. An inter-stimulus interval separating face-cues and probes (800 ms was introduced only in the first experiment. In line with our predictions, in Experiment 1 the self-face elicited the N2pc and the SPCN component. In Experiment 2 in addition to N2pc, an attentional bias was observed. Our results indicate that unintentional self-face processing disables the top-down control setting to filter out distractors, thus leading to the engagement of attentional resources and visual short-term memory.

In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

DEFF Research Database (Denmark)

Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

2003-01-01

Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...

Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition

International Nuclear Information System (INIS)

Manis-Levy, Hadar; Mintz, Moshe H.; Livneh, Tsachi; Zukerman Ido; Raveh, Avi

2014-01-01

The effect of radio-frequency (RF) or low-frequency (LF) bias voltage on the formation of amorphous hydrogenated carbon (a-C:H) films was studied on silicon substrates with a low methane (CH 4 ) concentration (2–10 vol.%) in CH 4 +Ar mixtures. The bias substrate was applied either by RF (13.56 MHz) or by LF (150 kHz) power supply. The highest hardness values (∼18–22 GPa) with lower hydrogen content in the films (∼20 at.%) deposited at 10 vol.% CH 4 , was achieved by using the RF bias. However, the films deposited using the LF bias, under similar RF plasma generation power and CH 4 concentration (50 W and 10 vol.%, respectively), displayed lower hardness (∼6–12 GPa) with high hydrogen content (∼40 at.%). The structures analyzed by Fourier Transform Infrared (FTIR) and Raman scattering measurements provide an indication of trans-polyacetylene structure formation. However, its excessive formation in the films deposited by the LF bias method is consistent with its higher bonded hydrogen concentration and low level of hardness, as compared to the film prepared by the RF bias method. It was found that the effect of RF bias on the film structure and properties is stronger than the effect of the low-frequency (LF) bias under identical radio-frequency (RF) powered electrode and identical PECVD (plasma enhanced chemical vapor deposition) system configuration. (plasma technology)

Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Jinlong Jiang

2014-01-01

Full Text Available The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3 carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2 ratio of the films.

Multipacting in a coaxial coupler with bias voltage for SRF operation with a large beam current

Science.gov (United States)

Liu, Z.-K.; Wang, Ch.; Chang, F.-Y.; Chang, L.-H.; Chang, M.-H.; Chen, L.-J.; Chung, F.-T.; Lin, M.-C.; Lo, C.-H.; Tsai, C.-L.; Tsai, M.-H.; Yeh, M.-S.; Yu, T.-C.

2016-09-01

A superconducting radio-frequency (SRF) module is commonly used for a high-energy accelerator; its purpose is to provide energy to the particle beam. Because of the low power dissipation and smaller impedance of a higher-order mode for this module, it can provide more power to the particle beam with better stability through decreasing the couple bunch instability. A RF coupler is necessary to transfer the high power from a RF generator to the cavity. A coupler of coaxial type is a common choice. With high-power operation, it might suffer from multipacting, which is a resonance phenomenon due to re-emission of secondary electrons. Applying a bias voltage between inner and outer conductors of the coaxial coupler might increase or decrease the strength of the multipacting effect. We studied the effect of a bias voltage on multipacting using numerical simulation to track the motion of the electrons. The simulation results and an application for SRF operation with a large beam current are presented in this paper.

Effects of bias voltage and annealing on the structure and mechanical properties of WC0.75N0.25 thin films

International Nuclear Information System (INIS)

Su, Y.D.; Hu, C.Q.; Wen, M.; Wang, C.; Liu, D.S.; Zheng, W.T.

2009-01-01

We investigated the effects of both bias voltage and annealing on the structure and mechanical properties of WC 0.75 N 0.25 thin films, deposited on Si (1 0 0) substrates by a direct current reactive magnetron sputtering system, in which the negative substrate bias voltage (V b ) was varied from floating (-1.6 V) to -200 V, and the deposited films were annealed at 800 deg. C for 2 h. The X-ray photoelectron spectroscopy and selected area electron diffraction analyses, along with the density-functional theory (DFT) calculations on the electronic structure, showed that WC 0.75 N 0.25 films were a single-phase of carbonitrides. After annealing, a significant decrease in hardness for the films was observed, being a result of point-defect annihilation as V b was in the range of floating to -120 V. However, when V b was in the range of -160 to -200 V, the hardness increased from ∼37 GPa for the as-deposited film to a maximum of ∼43 GPa for the annealed one. This increase in hardness after annealing might be attributed to age-hardening.

Self-oscillating resonant power converter

DEFF Research Database (Denmark)

2014-01-01

The present invention relates to resonant power converters and inverters comprising a self-oscillating feedback loop coupled from a switch output to a control input of a switching network comprising one or more semiconductor switches. The self-oscillating feedback loop sets a switching frequency...... of the power converter and comprises a first intrinsic switch capacitance coupled between a switch output and a control input of the switching network and a first inductor. The first inductor is coupled in-between a first bias voltage source and the control input of the switching network and has...... a substantially fixed inductance. The first bias voltage source is configured to generate an adjustable bias voltage applied to the first inductor. The output voltage of the power converter is controlled in a flexible and rapid manner by controlling the adjustable bias voltage....

Bias-stress characterization of solution-processed organic field-effect transistor based on highly ordered liquid crystals

Science.gov (United States)

Kunii, M.; Iino, H.; Hanna, J.

2017-06-01

Bias-stress effects in solution-processed, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) field effect transistors (FETs) are studied under negative and positive direct current bias. The bottom gate, bottom contact polycrystalline Ph-BTBT-10 FET with a hybrid gate dielectric of polystyrene and SiO2 shows high field effect mobility as well as a steep subthreshold slope when fabricated with a highly ordered smectic E liquid crystalline (SmE) film as a precursor. Negative gate bias-stress causes negative threshold voltage shift (ΔVth) for Ph-BTBT-10 FET in ambient air, but ΔVth rapidly decreases as the gate bias decreases and approaches to near zero when the gate bias goes down to 9 V in amplitude. In contrast, positive gate bias-stress causes negligible ΔVth even with a relatively high bias voltage. These results conclude that Ph-BTBT-10 FET has excellent bias-stress stability in ambient air in the range of low to moderate operating voltages.

Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

International Nuclear Information System (INIS)

Yan-Rong, Cao; Xiao-Hua, Ma; Yue, Hao; Shi-Gang, Hu

2010-01-01

This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Magnetoresistance and negative differential resistance in Ni/graphene/Ni vertical heterostructures driven by finite bias voltage: a first-principles study

DEFF Research Database (Denmark)

Saha, Kamal K.; Blom, Anders; Thygesen, Kristian S.

2012-01-01

Using the nonequilibrium Green's function formalism combined with density functional theory, we study finite bias quantum transport in Ni/Grn/Ni vertical heterostructures where n graphene layers are sandwiched between two semi-infinite Ni(111) electrodes. We find that the recently predicted “pess...... differential resistance as the bias voltage is increased from Vb=0 V to Vb≃0.5 V. We confirm that both of these nonequilibrium transport effects hold for different types of bonding of Gr on the Ni(111) surface while maintaining Bernal stacking between individual Gr layers....... “pessimistic” magnetoresistance of 100% for n≥5 junctions at zero bias voltage Vb→0 persists up to Vb≃0.4 V, which makes such devices promising for spin-torque-based device applications. In addition, for parallel orientations of the Ni magnetizations, the n=5 junction exhibits a pronounced negative...

Piezoelectric self sensing actuators for high voltage excitation

International Nuclear Information System (INIS)

Grasso, E; Totaro, N; Janocha, H; Naso, D

2013-01-01

Self sensing techniques allow the use of a piezoelectric transducer simultaneously as an actuator and as a sensor. Such techniques are based on knowledge of the transducer behaviour and on measurements of electrical quantities, in particular voltage and charge. Past research work has mainly considered the linear behaviour of piezoelectric transducers, consequently restricting the operating driving voltages to low values. In this work a new self sensing technique is proposed which is able to perform self sensing reconstruction both at low and at high driving voltages. This technique, in fact, makes use of a hysteretic model to describe the nonlinear piezoelectric capacitance necessary for self sensing reconstruction. The capacitance can be measured and identified at the antiresonances of a vibrating structure with a good approximation. After providing a mathematical background to deal with the main aspects of self sensing, this technique is compared theoretically and experimentally to a typical linear one by using an aluminum plate with one bonded self sensing transducer and a positive position feedback (PPF) controller to verify the performance in self sensing based vibration control. (paper)

Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma

International Nuclear Information System (INIS)

Lee, Gyeo-Re; Hwang, Sung-Wook; Min, Jae-Ho; Moon, Sang Heup

2002-01-01

The dependence of the SiO 2 etch rate on the angle of ions incident on the substrate surface was studied over a bias voltage range from -20 to -600 V in a high-density CHF 3 plasma using a Faraday cage to control the ion incident angle. The effect of the bottom plane on the sidewall etching was also examined. Differences in the characteristics of the etch rate as a function of the ion angle were observed for different bias voltage regions. When the absolute value of the bias voltage was smaller than 200 V, the normalized etch rate (NER) defined as the etch rate normalized by the rate on the horizontal surface, changed following a cosine curve with respect to the ion incident angle, defined as the angle between the ion direction and the normal of the substrate surface. When the magnitude of the bias voltage was larger than 200 V, the NER was deviated to higher values from those given by a cosine curve at ion angles between 30 deg. and 70 deg. , and then drastically decreased at angles higher than 70 deg. until a net deposition was observed at angles near 90 deg. . The characteristic etch-rate patterns at ion angles below 70 deg. were determined by the ion energy transferred to the surface, which affected the SiO 2 etch rate and, simultaneously, the rate of removal of a fluorocarbon polymer film formed on the substrate surface. At high ion angles, particles emitted from the bottom plane contributed to polymer formation on and affected the etching characteristics of the substrate

Theoretical investigation of phase-controlled bias effect in capacitively coupled plasma discharges

International Nuclear Information System (INIS)

Kwon, Deuk-Chul; Yoon, Jung-Sik

2011-01-01

We theoretically investigated the effect of phase difference between powered electrodes in capacitively coupled plasma (CCP) discharges. Previous experimental result has shown that the plasma potential could be controlled by using a phase-shift controller in CCP discharges. In this work, based on the previously developed radio frequency sheath models, we developed a circuit model to self-consistently determine the bias voltage from the plasma parameters. Results show that the present theoretical model explains the experimental results quite well and there is an optimum value of the phase difference for which the V dc /V pp ratio becomes a minimum.

A Self-Biased Active Voltage Doubler for Energy Harvesting Systems

KAUST Repository

Tayyab, Umais; Alzaher, Hussain A.

2017-01-01

An active voltage doubler utilizing a single supply op-amp for energy harvesting system is presented. The proposed doubler is used for rectification process to achieve both acceptably high power conversion efficiency (PCE) and large rectified DC

Economic inequality is linked to biased self-perception.

Science.gov (United States)

Loughnan, Steve; Kuppens, Peter; Allik, Jüri; Balazs, Katalin; de Lemus, Soledad; Dumont, Kitty; Gargurevich, Rafael; Hidegkuti, Istvan; Leidner, Bernhard; Matos, Lennia; Park, Joonha; Realo, Anu; Shi, Junqi; Sojo, Victor Eduardo; Tong, Yuk-Yue; Vaes, Jeroen; Verduyn, Philippe; Yeung, Victoria; Haslam, Nick

2011-10-01

People's self-perception biases often lead them to see themselves as better than the average person (a phenomenon known as self-enhancement). This bias varies across cultures, and variations are typically explained using cultural variables, such as individualism versus collectivism. We propose that socioeconomic differences among societies--specifically, relative levels of economic inequality--play an important but unrecognized role in how people evaluate themselves. Evidence for self-enhancement was found in 15 diverse nations, but the magnitude of the bias varied. Greater self-enhancement was found in societies with more income inequality, and income inequality predicted cross-cultural differences in self-enhancement better than did individualism/collectivism. These results indicate that macrosocial differences in the distribution of economic goods are linked to microsocial processes of perceiving the self.

The self-attribution bias and paranormal beliefs.

Science.gov (United States)

van Elk, Michiel

2017-03-01

The present study investigated the relation between paranormal beliefs, illusory control and the self-attribution bias, i.e., the motivated tendency to attribute positive outcomes to oneself while negative outcomes are externalized. Visitors of a psychic fair played a card guessing game and indicated their perceived control over randomly selected cards as a function of the congruency and valence of the card. A stronger self-attribution bias was observed for paranormal believers compared to skeptics and this bias was specifically related to traditional religious beliefs and belief in superstition. No relation between paranormal beliefs and illusory control was found. Self-report measures indicated that paranormal beliefs were associated to being raised in a spiritual family and to anomalous experiences during childhood. Thereby this study suggests that paranormal beliefs are related to specific cognitive biases that in turn are shaped by socio-cultural factors. Copyright © 2017 Elsevier Inc. All rights reserved.

Bias voltage dependence of tunneling magnetoresistance in granular C60–Co films with current-perpendicular-to-plane geometry

International Nuclear Information System (INIS)

Sakai, Seiji; Mitani, Seiji; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, Pavel; Ohtomo, Manabu; Naramoto, Hiroshi; Takanashi, Koki

2012-01-01

Voltage-dependence of the tunneling magnetoresistance effect in the granular C 60 –Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C 60 –Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C 60 -based matrix (C 60 –Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures. - Highlights: ► Unusual voltage dependence of the TMR effect in granular C 60 –Co films is studied. ► Linear temperature-characteristic voltage dependence in the MR–V relationship. ► Spin-flip scattering by the exchange-coupled d-electron spins at the interface.

Contamination effects on fixed-bias Langmuir probes

Energy Technology Data Exchange (ETDEWEB)

Steigies, C. T. [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, 24098 Kiel (Germany); Barjatya, A. [Department of Physical Sciences, Embry-Riddle Aeronautical University, Daytona Beach, Florida 32114 (United States)

2012-11-15

Langmuir probes are standard instruments for plasma density measurements on many sounding rockets. These probes can be operated in swept-bias as well as in fixed-bias modes. In swept-bias Langmuir probes, contamination effects are frequently visible as a hysteresis between consecutive up and down voltage ramps. This hysteresis, if not corrected, leads to poorly determined plasma densities and temperatures. With a properly chosen sweep function, the contamination parameters can be determined from the measurements and correct plasma parameters can then be determined. In this paper, we study the contamination effects on fixed-bias Langmuir probes, where no hysteresis type effect is seen in the data. Even though the contamination is not evident from the measurements, it does affect the plasma density fluctuation spectrum as measured by the fixed-bias Langmuir probe. We model the contamination as a simple resistor-capacitor circuit between the probe surface and the plasma. We find that measurements of small scale plasma fluctuations (meter to sub-meter scale) along a rocket trajectory are not affected, but the measured amplitude of large scale plasma density variation (tens of meters or larger) is attenuated. From the model calculations, we determine amplitude and cross-over frequency of the contamination effect on fixed-bias probes for different contamination parameters. The model results also show that a fixed bias probe operating in the ion-saturation region is affected less by contamination as compared to a fixed bias probe operating in the electron saturation region.

An auto-biased 0.5 um CMOS transconductor for very high frequency applications

OpenAIRE

Garrido, Nuno; Franca, José E.

1998-01-01

This paper describes a CMOS transconductance cell for the implementation of very high frequency current-mode gm-C filters. It features simple pseudo-differential circuitry employing small device size transistors and yielding a power dissipation of less than 1 mW/pole at nominal 3.0 V supply voltage. Self-biased common-mode voltage designed to minimize mismatch errors, improves noise and stability behavior. Short channel effects are analyzed and simulation results are presented.

Influence of bias voltage on properties of AlCrN coatings prepared by cathodic arc deposition

International Nuclear Information System (INIS)

Lomello, F.; Sanchette, F.; Schuster, F.; Tabarant, M.; Billard, A.

2013-01-01

AlCrN coatings were prepared by vacuum cathodic arc deposition. This low-temperature technique has been chosen due to its versatility, allowing the industrial up-scaling. In this study, the attention was focused on the correlation of the bias voltage with the resulting mechanical-tribological properties. For this purpose, the bias voltage was varied from 0 to -150 V. Indeed, the variation of grain sizes from 24 to 16 nm as well as the residual stresses from -0.68 to -8.94 GPa lead to obtain different mechanical-tribological properties. In this context, the sample deposited at -100 V exhibited an enhanced hardness (50 ± 2 GPa) and an acceptable wear resistance. (authors)

Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

International Nuclear Information System (INIS)

Zhang Yong; Yang Jianhong; Cai Xueyuan; Wang Zaixing

2010-01-01

The exponential dependence of the potential barrier height φ c on the biased voltages of the inorganic/organic static induction transistor (SIT/OSIT) through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of φ c on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description of φ c can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics. (semiconductor devices)

Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

International Nuclear Information System (INIS)

Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

1985-05-01

When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance

Implementation of Self-Bias Transistor on Voting Logic

International Nuclear Information System (INIS)

Harzawardi Hasim; Syirrazie Che Soh

2014-01-01

Study in the eld of digital integrated circuit (IC) already become common to the modern industrial. Day by day we have been introduced with new gadget that was developed based on transistor. This paper will study the implementation of self-bias transistor on voting logic. The self-bias transistor will connected both on pull-up network and pull-down network. On previous research, study on comparison of total number of transistors, time propagation delay, and frequency between NAND and NOR gate of voting logic. It's show, with the same number of transistor, NAND gate achieve high frequency and low time propagation delay compare to NOR gate. We extend this analysis by comparing the total number of transistor, time propagation delay, frequency and power dissipation between common NAND gate with self-bias NAND gate. Extensive LTSpice simulations were performed using IBM 90 nm CMOS(Complementary Metal Oxide Semiconductor) process technology. The result show self-bias voting NAND gate consumes 54 % less power dissipation, 43% slow frequency and 43 % high time propagation delay compare to common voting NAND gate. (author)

Analysis of bias effects on the total ionizing dose response in a 180 nm technology

International Nuclear Information System (INIS)

Liu Zhangli; Hu Zhiyuan; Zhang, Zhengxuan; Shao Hua; Chen Ming; Bi Dawei; Ning Bingxu; Zou Shichang

2011-01-01

The effects of gamma ray irradiation on the shallow trench isolation (STI) leakage current in a 180 nm technology are investigated. The radiation response is strongly influenced by the bias modes, gate bias during irradiation, substrate bias during irradiation and operating substrate bias after irradiation. We found that the worst case occurs under the ON bias condition for the ON, OFF and PASS bias mode. A positive gate bias during irradiation significantly enhances the STI leakage current, indicating the electric field influence on the charge buildup process during radiation. Also, a negative substrate bias during irradiation enhances the STI leakage current. However a negative operating substrate bias effectively suppresses the STI leakage current, and can be used to eliminate the leakage current produced by the charge trapped in the deep STI oxide. Appropriate substrate bias should be introduced to alleviate the total ionizing dose (TID) response, and lead to acceptable threshold voltage shift and subthreshold hump effect. Depending on the simulation results, we believe that the electric field distribution in the STI oxide is the key parameter influencing bias effects on the radiation response of transistor. - Highlights: → ON bias is the worst bias condition for the ON, PASS and OFF bias modes. → Larger gate bias during irradiation leads to more pronounced characteristic degradation. → TID induced STI leakage can be suppressed by negative operating substrate bias voltage. → Negative substrate bias during irradiation leads to larger increase of off-state leakage. → Electric field in the STI oxide greatly influences the device's radiation effect.

Self-Biased Differential Rectifier with Enhanced Dynamic Range for Wireless Powering

KAUST Repository

Ouda, Mahmoud H.

2016-08-29

A self-biased, cross-coupled, differential rectifier is proposed with enhanced power-conversion efficiency over an extended range of input power. A prototype is designed for UHF 433MHz RF power-harvesting applications and is implemented using 0.18μm CMOS technology. The proposed rectifier architecture is compared to the conventional cross-coupled rectifier. It demonstrates an improvement of more than 40% in the rectifier power conversion efficiency (PCE) and an input power range extension of more than 50% relative to the conventional crosscoupled rectifier. A sensitivity of -15.2dBm (30μW) input power for 1V output voltage and a peak power-conversion efficiency of 65% are achieved for a 50kω load. © 2004-2012 IEEE.

Positively Biased Self-Perceptions of Peer Acceptance and Subtypes of Aggression in Children

Science.gov (United States)

Lynch, Rebecca J.; Kistner, Janet A.; Stephens, Haley F.; David-Ferdon, Corinne

2016-01-01

There is a growing body of research linking children’s positively biased self-perceptions with higher levels of aggression. This study extended this area of research by examining prospective associations of positively biased self-perceptions of peer acceptance with overt and relational aggression. In addition, moderating effects of peer rejection were examined to test the “disputed overestimation hypothesis,” which posits that the link between bias and aggression is limited to children who are rejected by their peers. Using a two-wave longitudinal design, measures of peer-rated and self-perceived peer acceptance and peer-rated overt and relational aggression were obtained for 712 children in 3rd through 5th grades (386 girls and 326 boys). Positively biased perceptions led to increases in relational, but not overt, aggression. This pattern was observed even when the effects of gender, race, peer rejection, and overt aggression on relational aggression were controlled. Contrary to the disputed overestimation hypothesis, the prospective associations between bias and aggression did not vary as a function of children’s peer rejection status, thus supporting the view that positive bias predicts future aggressive behavior, regardless of social status. The results are discussed in terms of the comparability with previous findings and practical implications. PMID:26423823

Bias temperature instability in tunnel field-effect transistors

Science.gov (United States)

Mizubayashi, Wataru; Mori, Takahiro; Fukuda, Koichi; Ishikawa, Yuki; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Liu, Yongxun; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Matsukawa, Takashi; Masahara, Meishoku; Endo, Kazuhiko

2017-04-01

We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). The positive BTI and negative BTI mechanisms in TFETs are the same as those in metal-oxide-semiconductor FETs (MOSFETs). In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (V th) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. The BTI lifetime in n- and p-type TFETs is improved by applying a drain bias corresponding to the operation conditions.

The effect of body-weight and obesity bias on children’s self-esteem

OpenAIRE

Kornilaki, Ekaterina N.

2014-01-01

The aims of this study were: a) to compare the self-esteem of obese children and normal–weight controls, and b) to examine whether obesity bias moderates the relationship between weight status and self-esteem. Fifty three normal-weight and forty 11-year-old obese children were administered Harter’s (1985) Self-Perception Profile for Children (SPPC), which consists of a global self-worth subscale and five domain-specific subscales that measure scholastic competence, social acceptance, athletic...

The foreign language effect on the self-serving bias: A field experiment in the high school classroom.

Science.gov (United States)

van Hugten, Joeri; van Witteloostuijn, Arjen

2018-01-01

The rise of bilingual education triggers an important question: which language is preferred for a particular school activity? Our field experiment (n = 120) shows that students (aged 13-15) who process feedback in non-native English have greater self-serving bias than students who process feedback in their native Dutch. By contrast, literature on the foreign-language emotionality effect suggests a weaker self-serving bias in the non-native language, so our result adds nuance to that literature. The result is important to schools as it suggests that teachers may be able to reduce students' defensiveness and demotivation by communicating negative feedback in the native language, and teachers may be able to increase students' confidence and motivation by communicating positive feedback in the foreign language.

Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

International Nuclear Information System (INIS)

Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

2008-01-01

Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of social approval bias on self-reported fruit and vegetable consumption: a randomized controlled trial

Directory of Open Access Journals (Sweden)

Marcus Al C

2008-06-01

Full Text Available Abstract Background Self-reports of dietary intake in the context of nutrition intervention research can be biased by the tendency of respondents to answer consistent with expected norms (social approval bias. The objective of this study was to assess the potential influence of social approval bias on self-reports of fruit and vegetable intake obtained using both food frequency questionnaire (FFQ and 24-hour recall methods. Methods A randomized blinded trial compared reported fruit and vegetable intake among subjects exposed to a potentially biasing prompt to that from control subjects. Subjects included 163 women residing in Colorado between 35 and 65 years of age who were randomly selected and recruited by telephone to complete what they were told would be a future telephone survey about health. Randomly half of the subjects then received a letter prior to the interview describing this as a study of fruit and vegetable intake. The letter included a brief statement of the benefits of fruits and vegetables, a 5-A-Day sticker, and a 5-a-Day refrigerator magnet. The remainder received the same letter, but describing the study purpose only as a more general nutrition survey, with neither the fruit and vegetable message nor the 5-A-Day materials. Subjects were then interviewed on the telephone within 10 days following the letters using an eight-item FFQ and a limited 24-hour recall to estimate fruit and vegetable intake. All interviewers were blinded to the treatment condition. Results By the FFQ method, subjects who viewed the potentially biasing prompts reported consuming more fruits and vegetables than did control subjects (5.2 vs. 3.7 servings per day, p Conclusion Self-reports of fruit and vegetable intake using either a food frequency questionnaire or a limited 24-hour recall are both susceptible to substantial social approval bias. Valid assessments of intervention effects in nutritional intervention trials may require objective measures of

On the theory of non-self-maintained low voltage arc discharge

International Nuclear Information System (INIS)

Shcherbinin, P.P.; Cherednichenko, Yu.G.

1980-01-01

In the approximation of constant temperature of plasma electrons for two emitter temperatures 1440 and 1830 K calculated are the volt-ampere characteristics and components of the voltage internal drop in a thermionic converter in the cases of self-maintained discharge in cesium and with an external source of atom ionization and electron heating. It is obtained, that using an external ionization source the decrease of voltage drop in the interelectrode gap with account of ionization energy constitutes about 0.1 V. Electron heating is not effective. For further reduction of voltage losses it is necessary to search for ways for decreasing electron Coulomb scattering on ions

Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

Energy Technology Data Exchange (ETDEWEB)

Hernández-Rosales, E.; Cedeño, E. [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil); Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Hernandez-Wong, J. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); CONACYT, México, DF, México (Mexico); Rojas-Trigos, J. B.; Marin, E. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Gandra, F. C. G.; Mansanares, A. M., E-mail: manoel@ifi.unicamp.br [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil)

2016-07-25

In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

Design and simulation of self-biased circulators in the ultra high frequency band

International Nuclear Information System (INIS)

Wang Jianwei; Geiler, Anton; Mistry, Perhaad; Kaeli, David R.; Harris, Vincent G.; Vittoria, Carmine

2012-01-01

Theoretical models were developed to design self-biased Y-junction circulators operating at ultra high frequency (UHF). The proposed circulator designs consist of insulating nanowires of yttrium iron garnet (YIG) embedded in high permittivity barium–strontium titanate (BSTO) substrates. A design with as many as 10 5 or greater wires may be considered in its entirety to determine the electromagnetic scattering S-parameters of a circulator design, thus helping to mitigate the computational limitations of the available finite element method (FEM) tools. The approach seeks to represent the nanowires and the BSTO substrate by an equivalent medium with effective properties inclusive of the average saturation magnetization, dynamic demagnetizing fields, and permittivity. The effective medium approach was validated in comparison with the FEM models. Using the proposed approach, a self-biased junction circulator consisting of YIG nanowires embedded in a BSTO substrate was designed and simulated in which the center frequency insertion loss was calculated to be as low as 0.16 dB with isolation of −42.3 dB at 1 GHz. The 20 dB bandwidth was calculated to be 50 MHz. These results suggest that practical self-biased circulators at the UHF band are feasible. - Highlights: ► Presented a self-biased Y-junction circulator topology on composite substrate with YIG nanowires and high permittivity BSTO. ► Developed an equivalent model to characterize the composite substrate. ► Designed a self-biased junction circulator consisting of YIG nanowires embedded in a BSTO substrate at 1 GHz.

Bias voltage dependence of molecular orientation of dialkyl ketone and fatty acid alkyl ester at the liquid–graphite interface

Energy Technology Data Exchange (ETDEWEB)

Hibino, Masahiro, E-mail: hibino@mmm.muroran-it.ac.jp [Department of Applied Sciences, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Tsuchiya, Hiroshi [Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan)

2014-10-30

Graphical abstract: - Highlights: • Self-assembled monolayers (SAMs) of 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) were formed on a graphite surface at the liquid–solid interface. • Orientations of the molecules in SAMs on the substrate were studied by scanning tunneling microscopy. • A perpendicular carbon skeleton-plane orientation with the CO pointing up on the surface is favorable for a substrate with negative charge and vice versa. - Abstract: Molecular orientations of self-assembled 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) monolayers adsorbed on a graphite surface were studied by scanning tunneling microscopy (STM) at the liquid–solid interface. At a positive sample bias, the central areas of the dialkyl ketone and fatty acid alkyl ester molecules in the STM images appeared as two bright regions on both sides of a dim spot and a bright region on one side of a dim spot, whereas at a negative sample bias, the areas appeared dim. This contrast variation indicates that a perpendicular carbon skeleton-plane orientation with the CO pointing down on the surface is favorable for a substrate with positive charge and vice versa because of the greater electronegativity of the oxygen atom. Upon the bias voltage reversal, the delay time for the STM image contrast change in the region was observed on a time scale of minutes. The difference between the delay time lengths for the direction of bias polarity change indicates that the perpendicular configuration with CO pointing up is more stable than that with CO pointing down. These results indicate that the use of an electric field along a direction vertical to the monolayer on the substrate provides control over the orientations of the molecules between two stable states at the liquid–solid interface.

Practical investigation of the gate bias effect on the reverse recovery behavior of the body diode in power MOSFETs

DEFF Research Database (Denmark)

Lindberg-Poulsen, Kristian; Petersen, Lars Press; Ouyang, Ziwei

2014-01-01

This work considers an alternative method of reducing the body diode reverse recovery by taking advantage of the MOSFET body effect, and applying a bias voltage to the gate before reverse recovery. A test method is presented, allowing the accurate measurement of voltage and current waveforms during...... reverse recovery at high di=dt. Different bias voltages and dead times are combined, giving a loss map which makes it possible to evaluate the practical efficacy of gate bias on reducing the MOSFET body diode reverse recovery, while comparing it to the well known methods of dead time optimization...

Through thick and thin: tuning the threshold voltage in organic field-effect transistors.

Science.gov (United States)

Martínez Hardigree, Josué F; Katz, Howard E

2014-04-15

Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more

Effects of the location of a biased limiter on turbulent transport in the IR-T1 tokamak plasma

International Nuclear Information System (INIS)

Alipour, R.; Ghoranneviss, M.; Salar Elahi, A.; Meshkani, S.

2017-01-01

Plasma confinement plays an important role in fusion study. Applying an external voltage using limiter biasing system is proved to be an efficient approach for plasma confinement. In this study, the position of the limiter biasing system was changed to investigate the effect of applying external voltages at different places to the plasma. The external voltages of ±200 V were applied at the different positions of edge, 5 mm and 10 mm inside the plasma. Then, the main plasma parameters were measured. The results show that the poloidal turbulent transport and radial electric field increased about 25-35% and 35-45%, respectively (specially when the limiter biasing system was placed 5 mm inside the plasma). Also, the Reynolds stress has experienced its maximum reduction about 5-10% when the limiter biasing system was at 5 mm inside the plasma and the voltage of +200 V was applied to the plasma. When the limiter biasing system move 10 mm inside the plasma, the main plasma parameters experienced more instabilities and fluctuations than other positions. (authors)

Emissive limiter bias experiment for improved confinement of tokamaks

International Nuclear Information System (INIS)

Choe, W.; Ono, M.; Darrow, D.S.; Pribyl, P.A.; Liberati, J.R.; Taylor, R.J.

1992-01-01

Experiments have been performed in Ohmic discharges of the UCLA CCT tokamak with a LaB 6 biased limiter, capable of emitting energetic electrons as a technique to improve confinement in tokamaks. To study the effects of emitted electrons, the limiter position, bias voltage, and plasma position were varied. The results have shown that the plasma positioning with respect to the emissive limiter plays an important role in obtaining H-mode plasmas. The emissive cathode must be located close to the last closed flux surface in order to charge up the plasma. As the cathode is moved closer to the wall, the positioning of the plasma becomes more critical since the plasma can easily detach from the cathode and reattach to the wall, resulting in the termination of H-mode. The emissive capability appears to be important for operating at lower bias voltage and reducing impurity levels in the plasma. With a heated cathode, transition to H-mode was observed for V bias ≤ 50 V and I inj ≥ 30 A. At a lower cathode heater current, a higher bias voltage is required for the transition. Moreover, with a lower cathode heater current, the time delay for inducing H-mode becomes longer, which can be attributed to the required time for the self-heating of the cathode to reach the emissive temperature. From this result, we conclude that the capacity for emission can significantly improve the performance of limiter biasing for inducing H-mode transition. With L-mode plasmas, the injection current flowing out of the cathode was generally higher than 100 A

Synthesis of sheath voltage drops in asymmetric radio-frequency discharges

International Nuclear Information System (INIS)

Yonemura, Shigeru; Nanbu, Kenichi; Iwata, Naoaki

2004-01-01

A sheath voltage drop in asymmetric discharges is one of the most important parameters of radio-frequency capacitively coupled plasmas because it determines the kinetic energy of the ions incident on the target or substrate. In this study, we developed a numerical simulation code to estimate the sheath voltage drops and, consequently, the self-bias voltage. We roughly approximated general asymmetric rf discharges to one-dimensional spherical ones. The results obtained by using our simulation code are consistent with measurements and Lieberman's theory

Influence of substrate bias voltage on the properties of TiO2 deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications

Science.gov (United States)

Bait, L.; Azzouz, L.; Madaoui, N.; Saoula, N.

2017-02-01

The aim of this paper is to investigate the effect of the substrate bias, varied from 0 to -100 V, on the structure and properties of the TiO2 thin films for biomaterials applications. The TiO2 films were grown onto 304L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure titanium target in Ar-O2 gas mixture. The variation of substrate bias voltage from 0 to -100 V produces variations of structure and mechanical properties of the films. The deposited films were characterized by X-rays diffraction, nanoindentation and potentiodynamic polarization. Also, the friction and wear properties of TiO2 films sliding against alumina ball in air were investigated. Experimental results showed that the thickness increases for non-biased substrate voltage to Vs = -100 V from 820 nm to 1936 nm respectively. The roughness is in the range of 50 nm and 14 nm. XRD results show that all structures of the films are crystalline and changed with varying the bias voltage. The anatase phase is predominant in the low negative bias range (0-50 V). The hardness significantly increased from 2.2 to 6.4 GPa when the bias voltage was increased from 0 to 75 V and then slightly decrease to 5.1 GPa as further increased to 100 V. At the same time, the results indicate that TiO2 films deposited at -100 V exhibited better wear resistance compared to the other samples, i.e. the minimum wear rates and the lower coefficient of friction of 0.16. In order to simulate natural biological conditions, physiological serum (pH = 6.3), thermostatically controlled at 37 °C, was used as the electrolyte for the study of the electrochemical properties. Comparison between the corrosion resistance of the uncoated and coated samples showed a reduction in corrosion current density for coated samples compared to the uncoated one. The best corrosion current density of the film deposited at -75 V was 5.9 nA/cm2, which is about 11 times less than that of the uncoated steel 68.3 nA/cm2). The

Coincident ion acceleration and electron extraction for space propulsion using the self-bias formed on a set of RF biased grids bounding a plasma source

International Nuclear Information System (INIS)

Rafalskyi, D; Aanesland, A

2014-01-01

We propose an alternative method to accelerate ions in classical gridded ion thrusters and ion sources such that co-extracted electrons from the source may provide beam space charge neutralization. In this way there is no need for an additional electron neutralizer. The method consists of applying RF voltage to a two-grid acceleration system via a blocking capacitor. Due to the unequal effective area of the two grids in contact with the plasma, a dc self-bias is formed, rectifying the applied RF voltage. As a result, ions are continuously accelerated within the grid system while electrons are emitted in brief instants within the RF period when the RF space charge sheath collapses. This paper presents the first experimental results and a proof-of-principle. Experiments are carried out using the Neptune thruster prototype which is a gridded Inductively Coupled Plasma (ICP) source operated at 4 MHz, attached to a larger beam propagation chamber. The RF power supply is used both for the ICP discharge (plasma generation) and powering the acceleration grids via a capacitor for ion acceleration and electron extraction without any dc power supplies. The ion and electron energies, particle flux and densities are measured using retarding field energy analyzers (RFEA), Langmuir probes and a large beam target. The system operates in Argon and N 2 . The dc self-bias is found to be generated within the gridded extraction system in all the range of operating conditions. Broad quasi-neutral ion-electron beams are measured in the downstream chamber with energies up to 400 eV. The beams from the RF acceleration method are compared with classical dc acceleration with an additional external electron neutralizer. It is found that the two acceleration techniques provide similar performance, but the ion energy distribution function from RF acceleration is broader, while the floating potential of the beam is lower than for the dc accelerated beam. (paper)

Unawareness of Self-interest Bias in Moral Judgments of Others’ Behavior

Directory of Open Access Journals (Sweden)

Bocian Konrad

2014-12-01

Full Text Available Previous studies (Bocian & Wojciszke, 2014 showed that self-interest biases moral perception of others’ unethical actions. Moreover, affective changes in attitudinal responses towards the perpetrator of an immoral act drives the bias. In the present studies, we attempted to answer the question whether people are aware of the self-interest bias in their judgments of others’ behavior. We conducted two experiments showing that moral judgments of verbally described and imagined actions were dominated by norms rather than self-interest (Study 1 and that people were not aware that self-interest distorted their moral judgment (Study 2. The unawareness of the self-interest bias among the participants was attributable to omission of their own emotional responses when forecasting their moral judgments. We discuss the importance of emotions presence in studies on moral judgments as well as contribution of the present research to the intuitionist approach to moral judgment.

Actor-Observer Bias in Close Relationships: The Role of Self-Knowledge and Self-Related Language.

Science.gov (United States)

Fiedler, Klaus; And Others

1995-01-01

Studied attributional biases in close relationships. Found that partner attributions prevail at the abstract level of adjectives, whereas self-attributions resided at the concrete level of action verbs. Findings underscore language's importance in attributional biases and reveal how people talk in less abstract terms about the self than about…

Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

Directory of Open Access Journals (Sweden)

Aleksei Obrosov

2017-02-01

Full Text Available MAX phases (M = transition metal, A = A-group element, and X = C/N are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100 and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM, X-ray Photoelectron Spectroscopy (XPS, X-ray Diffraction (XRD, Atomic Force Microscopy (AFM, and nanoindentation. Transmission Electron Microscopy (TEM was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm and granular size (76 nm combined with the highest hardness (15.9 GPa. The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films.

Helpers' Self-Assessment Biases Before and after Helping Skills Training

Science.gov (United States)

Jaeken, Marine; Zech, Emmanuelle; Brison, Céline; Verhofstadt, Lesley L.; Van Broeck, Nady; Mikolajczak, Moïra

2017-01-01

Several studies have shown that therapists are generally biased concerning their performed helping skills, as compared to judges' ratings. As clients' ratings of therapists' performance are better predictors of psychotherapy effectiveness than judges' ratings, this study examined the validity and effectiveness of a helping skills training program at reducing novice helpers' self-enhancement biases concerning their helping skills, in comparison to their clients' ratings. Helping skills were assessed by three objective measures (a knowledge multiple choice test, a video test and a role play), as well as by a self- and peer-reported questionnaire. In addition, some performed helping skills' correlates (relationship quality, session quality, and helpers' therapeutic attitudes) were assessed both by helpers and their simulated helpees. Seventy-two sophomores in psychology participated to this study, 37 being assigned to a 12-h helping skills training program, and 35 to a control group. Helpers were expected to assess the aforementioned performed helping skills and correlates as being better than their helpees' assessments at pretest, thus revealing a self-enhancement bias. At posttest, we expected that trained helpers would objectively exhibit better helping skills than untrained helpers while beginning to underestimate their performance, thus indexing a self-diminishment bias. In contrast, we hypothesized that untrained helpers would continue to overestimate their performance. Our hypotheses were only partly confirmed but results reflected a skilled-unaware pattern among trainees. Trained helpers went either from a pretest overestimation to a posttest equivalence (performed helping skills and performed therapeutic attitudes), or from a pretest equivalence to a posttest underestimation (performed session quality and performed therapeutic relationship), as compared to helpees' ratings. Results showed that trained helpers improved on all helping skills objective measures

Helpers' Self-Assessment Biases Before and after Helping Skills Training.

Science.gov (United States)

Jaeken, Marine; Zech, Emmanuelle; Brison, Céline; Verhofstadt, Lesley L; Van Broeck, Nady; Mikolajczak, Moïra

2017-01-01

Several studies have shown that therapists are generally biased concerning their performed helping skills, as compared to judges' ratings. As clients' ratings of therapists' performance are better predictors of psychotherapy effectiveness than judges' ratings, this study examined the validity and effectiveness of a helping skills training program at reducing novice helpers' self-enhancement biases concerning their helping skills, in comparison to their clients' ratings. Helping skills were assessed by three objective measures (a knowledge multiple choice test, a video test and a role play), as well as by a self- and peer-reported questionnaire. In addition, some performed helping skills' correlates (relationship quality, session quality, and helpers' therapeutic attitudes) were assessed both by helpers and their simulated helpees. Seventy-two sophomores in psychology participated to this study, 37 being assigned to a 12-h helping skills training program, and 35 to a control group. Helpers were expected to assess the aforementioned performed helping skills and correlates as being better than their helpees' assessments at pretest, thus revealing a self-enhancement bias. At posttest, we expected that trained helpers would objectively exhibit better helping skills than untrained helpers while beginning to underestimate their performance, thus indexing a self-diminishment bias. In contrast, we hypothesized that untrained helpers would continue to overestimate their performance. Our hypotheses were only partly confirmed but results reflected a skilled-unaware pattern among trainees. Trained helpers went either from a pretest overestimation to a posttest equivalence (performed helping skills and performed therapeutic attitudes), or from a pretest equivalence to a posttest underestimation (performed session quality and performed therapeutic relationship), as compared to helpees' ratings. Results showed that trained helpers improved on all helping skills objective measures

The effect of self-control on attentional bias for alcohol cues in male heavy drinkers.

NARCIS (Netherlands)

Teunissen, H.A.; Spijkerman, R.; Schoenmakers, T.M.; Vohs, K.D.; Engels, R.C.M.

2012-01-01

Attentional bias for alcohol cues increases craving and subsequent alcohol consumption. Override processes can be used to disengage attention from alcohol cues. This requires self-control and implies that depletion of self-control would impair the ability to disengage attention from alcohol cues.

Stabilization of electron beam spot size by self bias potential

International Nuclear Information System (INIS)

Kwan, T.J.T.; Moir, D.C.; Snell, C.M.; Kang, M.

1998-01-01

In high resolution flash x-ray imaging technology the electric field developed between the electron beam and the converter target is large enough to draw ions from the target surface. The ions provide fractional neutralization and cause the electron beam to focus radially inward, and the focal point subsequently moves upstream due to the expansion of the ion column. A self-bias target concept is proposed and verified via computer simulation that the electron charge deposited on the target can generate an electric potential, which can effectively limit the ion motion and thereby stabilize the growth of the spot size. A target chamber using the self bias target concept was designed and tested in the Integrated Test Stand (ITS). The authors have obtained good agreement between computer simulation and experiment

On-chip active gate bias circuit for MMIC amplifier applications with 100% threshold voltage variation compensation

NARCIS (Netherlands)

Hek, A.P. de; Busking, E.B.

2006-01-01

In this paper the design and performance of an on-chip active gate bias circuit for application in MMIC amplifiers, which gives 100% compensation for threshold variation and at the same time is insensitive to supply voltage variations, is discussed. Design equations have been given. In addition, the

Self-Heating Effects In Polysilicon Source Gated Transistors

Science.gov (United States)

Sporea, R. A.; Burridge, T.; Silva, S. R. P.

2015-01-01

Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may lead to undesirable thermal runaway effects and even device failure through self-heating. Using numerical simulations we show that, even in highly thermally-confined scenarios and at high current levels, self-heating is insufficient to compromise device integrity. Performance is minimally affected through a modest increase in output conductance, which may limit the maximum attainable gain. Measurements on polysilicon devices confirm the simulated results, with even smaller penalties in performance, largely due to improved heat dissipation through metal contacts. We conclude that SGTs can be reliably used for high gain, power efficient analog and digital circuits without significant performance impact due to self-heating. This further demonstrates the robustness of SGTs. PMID:26351099

Capacitively coupled radio-frequency plasmas excited by tailored voltage waveforms

International Nuclear Information System (INIS)

Lafleur, T; Delattre, P A; Booth, J P; Johnson, E V

2013-01-01

By applying certain types of ‘tailored’ voltage waveforms (TVWs) to capacitively coupled plasmas, a dc self-bias and an asymmetric plasma response can be produced, even in geometrically symmetric reactors. Furthermore, these arbitrary applied waveforms can produce a number of interesting phenomena that are not present in typical single-frequency sinusoidal discharges. This electrical asymmetry effect presents emerging possibilities for the improved control of the ion energy and ion flux in these systems; parameters of vital importance to both etching and deposition applications for materials processing. With a combined research approach utilizing both experimental measurements, and particle-in-cell simulations, we review and extend recent investigations that study a particular class of TVW. The waveforms used have a pulse-type shape and are composed of a varying number of harmonic frequencies. This allows a strong self-bias to be produced, and causes most of the applied voltage to be dropped across a single sheath. Additionally, decreasing the pulse width (by increasing the number of harmonics), allows the plasma density and ion flux to be increased. Simulation and experimental results both demonstrate that this type of waveform can be used to separately control the ion flux and ion energy, while still producing a uniform plasma over large area (50 cm diameter) rf electrodes. (paper)

Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

Energy Technology Data Exchange (ETDEWEB)

Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

2014-04-24

Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress

International Nuclear Information System (INIS)

Hsieh, Tien-Yu; Chang, Ting-Chang; Chen, Te-Chih; Tsai, Ming-Yen; Chen, Yu-Te

2013-01-01

This paper investigates the degradation mechanism of amorphous InGaZnO thin-film transistors under DC and AC gate bias stress. Comparing the degradation behavior at equal accumulated effective stress time, more pronounced threshold voltage shift under AC positive gate bias stress in comparison with DC stress indicates extra electron-trapping phenomenon that occurs in the duration of rising/falling time in pulse. Contrarily, illuminated AC negative gate bias stress exhibits much less threshold voltage shift than DC stress, suggesting that the photo-generated hole does not have sufficient time to drift to the interface of IGZO/gate insulator and causes hole-trapping under AC operation. Since the evolution of threshold voltage fits the stretched-exponential equation well, the different degradation tendencies under DC/AC stress can be attributed to the different electron- and hole-trapping efficiencies, and this is further verified by varying pulse waveform. - Highlights: ► Static and dynamic gate bias stresses are imposed on InGaZnO TFTs. ► Dynamic positive gate bias induces more pronounced threshold voltage shift. ► Static negative-bias illumination stress induces more severe threshold voltage shift. ► Evolution of threshold voltage fits the stretched-exponential equation well

Self-objectification, weight bias internalization, and binge eating in young women: Testing a mediational model.

Science.gov (United States)

Mehak, Adrienne; Friedman, Aliza; Cassin, Stephanie E

2018-03-01

Self-objectification and weight bias internalization are two internalization processes that are positively correlated with binge eating among young women. However, the mechanisms underlying these relationships are understudied. Consistent with objectification theory, this study examined appearance anxiety and body shame as mediators between self-objectification, weight bias internalization and binge eating. Female undergraduates (N=102) completed self-report measures of self-objectification, weight bias internalization, appearance anxiety, body shame, and binge eating. Results indicated that women who self-objectified and internalized negative weight-related attitudes reported greater binge eating (r s =.43 and r s =.57, respectively) and these associations were mediated by the combined effects of body shame and appearance anxiety. The contrast between the two mediators was also significant, such that body shame emerged as a stronger mediator within both mediational models. Results demonstrated that these internalization processes contribute to negative affect in young women, which may in turn lead to binge eating. Copyright © 2018 Elsevier Ltd. All rights reserved.

Social anxiety is characterized by biased learning about performance and the self.

Science.gov (United States)

Koban, Leonie; Schneider, Rebecca; Ashar, Yoni K; Andrews-Hanna, Jessica R; Landy, Lauren; Moscovitch, David A; Wager, Tor D; Arch, Joanna J

2017-12-01

People learn about their self from social information, and recent work suggests that healthy adults show a positive bias for learning self-related information. In contrast, social anxiety disorder (SAD) is characterized by a negative view of the self, yet what causes and maintains this negative self-view is not well understood. Here the authors use a novel experimental paradigm and computational model to test the hypothesis that biased social learning regarding self-evaluation and self-feelings represents a core feature that distinguishes adults with SAD from healthy controls. Twenty-one adults with SAD and 35 healthy controls (HCs) performed a speech in front of 3 judges. They subsequently evaluated themselves and received performance feedback from the judges and then rated how they felt about themselves and the judges. Affective updating (i.e., change in feelings about the self over time, in response to feedback from the judges) was modeled using an adapted Rescorla-Wagner learning model. HCs demonstrated a positivity bias in affective updating, which was absent in SAD. Further, self-performance ratings revealed group differences in learning from positive feedback-a difference that endured at an average of 1 year follow up. These findings demonstrate the presence and long-term endurance of positively biased social learning about the self among healthy adults, a bias that is absent or reversed among socially anxious adults. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

Self-aligned photolithography for the fabrication of fully transparent high-voltage devices

Science.gov (United States)

Zhang, Yonghui; Mei, Zengxia; Huo, Wenxing; Wang, Tao; Liang, Huili; Du, Xiaolong

2018-05-01

High-voltage devices, working in the range of hundreds of volts, are indispensable elements in the driving or readout circuits for various kinds of displays, integrated microelectromechanical systems and x-ray imaging sensors. However, the device performances are found hardly uniform or repeatable due to the misalignment issue, which are extremely common for offset drain high-voltage devices. To resolve this issue, this article reports a set of self-aligned photolithography technology for the fabrication of high-voltage devices. High-performance fully-transparent high-voltage thin film transistors, diodes and logic inverters are successfully fabricated with this technology. Unlike other self-aligned routes, opaque masks are introduced on the backside of the transparent substrate to facilitate proximity exposure method. The photolithography process is simulated and analyzed with technology computer aided design simulation to explain the working principle of the proximity exposure method. The substrate thickness is found to be vital for the implementation of this technology based on both simulation and experimental results. The electrical performance of high-voltage devices is dependent on the offset length, which can be delicately modulated by changing the exposure dose. The presented self-aligned photolithography technology is proved to be feasible in high-voltage circuits, demonstrating its huge potential in practical industrial applications.

Influence of substrate bias voltage on the properties of TiO2 deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications

International Nuclear Information System (INIS)

Bait, L.; Azzouz, L.; Madaoui, N.; Saoula, N.

2017-01-01

Highlights: • TiO 2 films were deposited on stainless steel 304L RF magnetron sputtering at different substrate bias. • The hardness of TiO 2 coated 304L are higher than those obtained for uncoated substrate. • TiO 2 films provide good protection for stainless steel against corrosion in Ringer solution. - Abstract: The aim of this paper is to investigate the effect of the substrate bias, varied from 0 to −100 V, on the structure and properties of the TiO 2 thin films for biomaterials applications. The TiO 2 films were grown onto 304L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure titanium target in Ar-O 2 gas mixture. The variation of substrate bias voltage from 0 to −100 V produces variations of structure and mechanical properties of the films. The deposited films were characterized by X-rays diffraction, nanoindentation and potentiodynamic polarization. Also, the friction and wear properties of TiO 2 films sliding against alumina ball in air were investigated. Experimental results showed that the thickness increases for non-biased substrate voltage to Vs = −100 V from 820 nm to 1936 nm respectively. The roughness is in the range of 50 nm and 14 nm. XRD results show that all structures of the films are crystalline and changed with varying the bias voltage. The anatase phase is predominant in the low negative bias range (0–50 V). The hardness significantly increased from 2.2 to 6.4 GPa when the bias voltage was increased from 0 to 75 V and then slightly decrease to 5.1 GPa as further increased to 100 V. At the same time, the results indicate that TiO 2 films deposited at −100 V exhibited better wear resistance compared to the other samples, i.e. the minimum wear rates and the lower coefficient of friction of 0.16. In order to simulate natural biological conditions, physiological serum (pH = 6.3), thermostatically controlled at 37 °C, was used as the electrolyte for the study of the electrochemical properties

A novel high voltage start up circuit for an integrated switched mode power supply

Energy Technology Data Exchange (ETDEWEB)

Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2010-09-15

A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

Enhanced Corrosion Resistance and Interfacial Conductivity of TiC x/a-C Nanolayered Coatings via Synergy of Substrate Bias Voltage for Bipolar Plates Applications in PEMFCs.

Science.gov (United States)

Yi, Peiyun; Zhang, Weixin; Bi, Feifei; Peng, Linfa; Lai, Xinmin

2018-06-06

Proton-exchange membrane fuel cells are one kind of renewable and clean energy conversion device, whose metallic bipolar plates are one of the key components. However, high interfacial contact resistance and poor corrosion resistance are still great challenges for the commercialization of metallic bipolar plates. In this study, we demonstrated a novel strategy for depositing TiC x /amorphous carbon (a-C) nanolayered coatings by synergy of 60 and 300 V bias voltage to enhance corrosion resistance and interfacial conductivity. The synergistic effects of bias voltage on the composition, microstructure, surface roughness, electrochemical corrosion behaviors, and interfacial conductivity of TiC x /a-C coatings were explored. The results revealed that the columnar structures in the inner layer were suppressed and the surface became rougher with the 300 V a-C layer outside. The composition analysis indicated that the sp 2 content increased with an increase of 300 V sputtering time. Due to the synergy strategy of bias voltage, lower corrosion current densities were achieved both in potentiostatic polarization (1.6 V vs standard hydrogen electrode) and potentiodynamic polarization. With the increase of 300 V sputtering time, the interfacial conductivity was improved. The enhanced corrosion resistance and interfacial conductivity of the TiC x /a-C coatings would provide new opportunities for commercial bipolar plates.

Electro-optical effect of a magnetically biased ferronematic liquid crystal.

Science.gov (United States)

Chen, S H; Liang, B J

1988-09-01

The electro-optical effect of a magnetically biased ferronematic liquid-crystal film is investigated by using birefringence measurements. When a magnetic field is applied, the threshold voltage of the Freedericksz transition no longer exists. The dependence of the birefringence on the magnetic field strength in the low field regime is presented. A theory that accounts for the results is given.

The effect of a medical opinion on self-perceptions of weight for Mexican adults: perception of change and cognitive biases.

Science.gov (United States)

Easton, Jonathan F; Stephens, Christopher R; Román Sicilia, Heriberto

2017-01-01

This study analysed the relationship between perceived and actual Body Mass Index (BMI) and the effect of a prior identification of obesity by a medical professional for adults using difference in response for two distinct BMI self-perception questions. Typically, self-perception studies only investigate the relation with current weight, whereas here the focus is on the self-perception of weight differences. A statistical approach was used to assess responses to the Mexican ENSANUT 2006 survey. Adults in the range of BMI from 13 to 60 were tested on responses to a categorical question and a figure rating scale self-perception question. Differences in response by gender and identification of obesity by a medical professional were analysed using linear regression. Results indicated that regardless of current BMI and gender, a verbal intervention by a medical professional will increase perceived BMI independently of actual BMI but does not necessarily make the identified obese more accurate in their BMI estimates. A shift in the average self-perception was seen with a higher response for the identified obese. A linear increase in perceived BMI as a function of actual BMI was observed in the range BMI self-image, to be considerably less. It was seen that an identification of obesity by a health care professional did not improve ability to judge weight but, rather, served as a new anchor from which the identified obese judge their weight, suggesting that even those identified obese who have lost weight, perceive their weight to be greater than it actually is. We believe that these results can be explained in terms of two cognitive biases; the self-serving bias and the anchoring bias.

Conduction channels at finite bias in single-atom gold contacts

DEFF Research Database (Denmark)

Brandbyge, Mads; Kobayashi, Nobuhiko; Tsukada, Masaru

1999-01-01

We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using the nonequilib......We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using...... of the eigenchannels projected onto tight-binding orbitals. We find a single almost fully transmitting channel with mainly s character for low bias while for high bias this channel becomes less transmitting and additional channels involving only d orbitals start to conduct....

Reconceptualizing Individual Differences in Self-Enhancement Bias: An Interpersonal Approach

Science.gov (United States)

Kwan, Virginia S. Y.; John, Oliver P.; Kenny, David A.; Bond, Michael H.; Robins, Richard W.

2004-01-01

Self-enhancement bias has been studied from 2 perspectives: L. Festinger's (1954) social comparison theory (self-enhancers perceive themselves more positively than they perceive others) and G. W. Allport's (1937) self-insight theory (self-enhancers perceive themselves more positively than they are perceived by others). These 2 perspectives are…

Electrical properties of fluorine-doped ZnO nanowires formed by biased plasma treatment

Science.gov (United States)

Wang, Ying; Chen, Yicong; Song, Xiaomeng; Zhang, Zhipeng; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-05-01

Doping is an effective method for tuning electrical properties of zinc oxide nanowires, which are used in nanoelectronic devices. Here, ZnO nanowires were prepared by a thermal oxidation method. Fluorine doping was achieved by a biased plasma treatment, with bias voltages of 100, 200, and 300 V. Transmission electron microscopy indicated that the nanowires treated at bias voltages of 100 and 200 V featured low crystallinity. When the bias voltage was 300 V, the nanowires showed single crystalline structures. Photoluminescence measurements revealed that concentrations of oxygen and surface defects decreased at high bias voltage. X-ray photoelectron spectroscopy suggested that the F content increased as the bias voltage was increased. The conductivity of the as-grown nanowires was less than 103 S/m; the conductivity of the treated nanowires ranged from 1 × 104-5 × 104, 1 × 104-1 × 105, and 1 × 103-2 × 104 S/m for bias voltage treatments at 100, 200, and 300 V, respectively. The conductivity improvements of nanowires formed at bias voltages of 100 and 200 V, were attributed to F-doping, defects and surface states. The conductivity of nanowires treated at 300 V was attributed to the presence of F ions. Thus, we provide a method of improving electrical properties of ZnO nanowires without altering their crystal structure.

Quantifying the Association of Self-Enhancement Bias With Self-Ratings of Personality and Life Satisfaction.

Science.gov (United States)

Leising, Daniel; Locke, Kenneth D; Kurzius, Elena; Zimmermann, Johannes

2016-10-01

Kwan, John, Kenny, Bond, and Robins conceptualize self-enhancement as a favorable comparison of self-judgments with judgments of and by others. Applying a modified version of Kwan et al.'s approach to behavior observation data, we show that the resulting measure of self-enhancement bias is highly reliable, predicts self-ratings of intelligence as well as does actual intelligence, interacts with item desirability in predicting responses to questionnaire items, and also predicts general life satisfaction. Consistent with previous research, however, self-ratings of intelligence did not become more valid when controlling for self-enhancement bias. We also show that common personality scales like the Rosenberg Self-Esteem Scale reflect self-enhancement at least as strongly as do scales that were designed particularly for that purpose (i.e., "social desirability scales"). The relevance of these findings in regard to the validity and utility of social desirability scales is discussed. © The Author(s) 2015.

Front-side biasing of n-in-p silicon strip detectors

CERN Document Server

Baselga Bacardit, Marta; Dierlamm, Alexander Hermann; Dragicevic, Marko Gerhart; Konig, Axel; Pree, Elias; Metzler, Marius

2018-01-01

Front-side biasing is an alternative method to bias a silicon sensor. Instead of directly applying high voltage to the back-side, one can exploit the conductive properties of the edge region to bias a detector exclusively via top-side connections. This option can be beneficial for the detector design and might help to facilitate the assembly process of modules. The effective bias voltage is affected by the resistance of the edge region and the sensor current. The measurements of n-in-p sensors performed to qualify this concept have shown that the voltage drop emerging from this resistance is negligible before irradiation. After irradiation, however, the resistivity of the edge region increases with fluence and saturates in the region of 10$^{7}\\,\\Omega$ at a fluence of 1$\\,\\cdot\\,10^{15}\\,$n$_{\\textrm{eq}}$cm$^{-2}$. The measurements are complemented by TCAD simulations and interpretations of the observed effects.

The self-attribution bias and paranormal beliefs

NARCIS (Netherlands)

van Elk, M.

The present study investigated the relation between paranormal beliefs, illusory control and the self-attribution bias, i.e., the motivated tendency to attribute positive outcomes to oneself while negative outcomes are externalized. Visitors of a psychic fair played a card guessing game and

Fast Self-Synchronization between LowVoltage Microgrid and Inverter using Virtual Synchronous Converter

Directory of Open Access Journals (Sweden)

Md Ruhul Amin

2017-12-01

Full Text Available In this paper, a fast self-synchronization known as virtual synchronous converter (VSCon between single-phase microgrid and inverter in low-voltage microgrid, has been developed in Matlab/Simulink. The idea is to any phase locked loop (PLL circuit for inverter-microgrid synchronization in order to improve the synchronization time. As known, it is difficult and lengthy process to tune the PLL gain parameters to reach suitable performance for synchronizing among the voltage, phase-angle and frequency between them. Due to this problem, a fast self synchronization technique is needed in order to minimize the time losses at the microgrid connection. Therefore, the VSCon has been developed which is based on the synchronous generator mathematical model but in virtual environment representation. It has been applied in the inverter control for generating switching pattern to the inverter switches in order to respond to the grid voltage for improve the synchronization. For a prove of concept, several simulation tests in MATLAB models have been conducted, in order to see the effectiveness of this VSCon. First test has been conducted, when a 240V, 50Hz frequency grid source is used for observing the self-synchronization the system with the power flows output. Furthermore, the next test is conducted when the grid frequency is changed from the rated frequency at 50Hz to 51Hz and the result shows the VSCon in inverter control takes nearly 40ms to synchronize to this new frequency value. The test on grid phase-angle delay also been tested when ac grid voltage has 150 phase delay. As from all the results, the improved inverter control with VSCon structure is able to have fast and self-synchronized between the invertergrid connection before the power from the inverter can be transferred.

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

Directory of Open Access Journals (Sweden)

Peter Hornak

2017-12-01

Full Text Available Tungsten carbide (WC/C layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT, indentation modulus (EIT and coefficient of friction (COF values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.

Cognitive bias measurement and social anxiety disorder: Correlating self-report data and attentional bias

Directory of Open Access Journals (Sweden)

Alexander Miloff

2015-09-01

Full Text Available Social anxiety disorder (SAD and attentional bias are theoretically connected in cognitive behavioral therapeutic models. In fact, there is an emerging field focusing on modifying attentional bias as a stand-alone treatment. However, it is unclear to what degree these attentional biases are present before commencing treatment. The purpose of this study was to measure pre-treatment attentional bias in 153 participants diagnosed with SAD using a home-based Internet version of the dot-probe paradigm. Results showed no significant correlation for attentional bias (towards or away from negative words or faces and the self-rated version of the Liebowitz Social Anxiety Scale (LSAS-SR. However, two positive correlations were found for the secondary measures Generalized Anxiety Disorder 7 (GAD-7 and Patient Health Questionnaire 9 (PHQ-9. These indicated that those with elevated levels of anxiety and depression had a higher bias towards negative faces in neutral–negative and positive–negative valence combinations, respectively. The unreliability of the dot-probe paradigm and home-based Internet delivery are discussed to explain the lack of correlations between LSAS-SR and attentional bias. Changes to the dot-probe task are suggested that could improve reliability.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

Energy Technology Data Exchange (ETDEWEB)

Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

2014-04-07

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage

Development of a broadband reflective T-filter for voltage biasing high-Q superconducting microwave cavities

International Nuclear Information System (INIS)

Hao, Yu; Rouxinol, Francisco; LaHaye, M. D.

2014-01-01

We present the design of a reflective stop-band filter based on quasi-lumped elements that can be utilized to introduce large dc and low-frequency voltage biases into a low-loss superconducting coplanar waveguide (CPW) cavity. Transmission measurements of the filter are seen to be in good agreement with simulations and demonstrate insertion losses greater than 20 dB in the range of 3–10 GHz. Moreover, transmission measurements of the CPW's fundamental mode demonstrate that loaded quality factors exceeding 10 5 can be achieved with this design for dc voltages as large as 20 V and for the cavity operated in the single-photon regime. This makes the design suitable for use in a number of applications including qubit-coupled mechanical systems and circuit QED

Attentional Bias Associated with Habitual Self-Stigma in People with Mental Illness.

Science.gov (United States)

Chan, Kevin K S; Mak, Winnie W S

2015-01-01

As habitual self-stigma can have a tremendous negative impact on people with mental illness, it is of paramount importance to identify its risk factors. The present study aims to examine the potential contributory role of attentional bias in habitual self-stigma. People with mental illness having strong (n = 47) and weak (n = 47) habitual self-stigma completed a computerized emotional Stroop task which included stigma-related, positive, and non-affective words as stimuli. The strong habit group was found to exhibit faster color-naming of stigma-related words (compared to non-affective words), whereas the weak habit group showed no difference in the speed of response to different stimuli. These findings suggest that people with stronger habitual self-stigma may be more able to ignore the semantic meaning of stigma-related words and focus on the color-naming task. Moreover, people with stronger habitual self-stigma may have greater attentional avoidance of stigma-related material. The present study is the first to demonstrate a specific relationship between habitual self-stigma and biased processing of stigma-related information. In order to further determine the role and the nature of attentional bias in habitual self-stigma, future research should employ a broader range of experimental paradigms and measurement techniques to examine stigma-related attentional bias in people with mental illness.

Light emitting diode driver with differential voltage supply

NARCIS (Netherlands)

2015-01-01

The current invention relates to a driver for driving one or a plurality of LEDs (D1, D2), comprising at least one driving unit (201, 202) adapted to be supplied with a differential voltage, between one first bias voltage (VB1) and one second bias voltage (VB2), the differential voltage being

Effect of applied bias voltage on corrosion-resistance for TiC1-xNx and Ti1-xNbxC1-yNy coatings

International Nuclear Information System (INIS)

Caicedo, J.C.; Amaya, C.; Yate, L.; Aperador, W.; Zambrano, G.; Gomez, M.E.; Alvarado-Rivera, J.; Munoz-Saldana, J.; Prieto, P.

2010-01-01

Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and 'impurities' of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

Is it me? Self-recognition bias across sensory modalities and its relationship to autistic traits.

Science.gov (United States)

Chakraborty, Anya; Chakrabarti, Bhismadev

2015-01-01

Atypical self-processing is an emerging theme in autism research, suggested by lower self-reference effect in memory, and atypical neural responses to visual self-representations. Most research on physical self-processing in autism uses visual stimuli. However, the self is a multimodal construct, and therefore, it is essential to test self-recognition in other sensory modalities as well. Self-recognition in the auditory modality remains relatively unexplored and has not been tested in relation to autism and related traits. This study investigates self-recognition in auditory and visual domain in the general population and tests if it is associated with autistic traits. Thirty-nine neurotypical adults participated in a two-part study. In the first session, individual participant's voice was recorded and face was photographed and morphed respectively with voices and faces from unfamiliar identities. In the second session, participants performed a 'self-identification' task, classifying each morph as 'self' voice (or face) or an 'other' voice (or face). All participants also completed the Autism Spectrum Quotient (AQ). For each sensory modality, slope of the self-recognition curve was used as individual self-recognition metric. These two self-recognition metrics were tested for association between each other, and with autistic traits. Fifty percent 'self' response was reached for a higher percentage of self in the auditory domain compared to the visual domain (t = 3.142; P self-recognition bias across sensory modalities (τ = -0.165, P = 0.204). Higher recognition bias for self-voice was observed in individuals higher in autistic traits (τ AQ = 0.301, P = 0.008). No such correlation was observed between recognition bias for self-face and autistic traits (τ AQ = -0.020, P = 0.438). Our data shows that recognition bias for physical self-representation is not related across sensory modalities. Further, individuals with higher autistic traits were better able

Influence of substrate bias voltage on the properties of TiO{sub 2} deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications

Energy Technology Data Exchange (ETDEWEB)

Bait, L. [Division Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, CDTA,Cité du 20 aout 1956, Baba Hassen, BP n°. 17, Alger (Algeria); Azzouz, L. [Université de Amar Telidji, Laghouat (Algeria); Madaoui, N. [Division Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, CDTA,Cité du 20 aout 1956, Baba Hassen, BP n°. 17, Alger (Algeria); Saoula, N., E-mail: nsaoula@cdta.dz [Division Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, CDTA,Cité du 20 aout 1956, Baba Hassen, BP n°. 17, Alger (Algeria)

2017-02-15

Highlights: • TiO{sub 2} films were deposited on stainless steel 304L RF magnetron sputtering at different substrate bias. • The hardness of TiO{sub 2} coated 304L are higher than those obtained for uncoated substrate. • TiO{sub 2} films provide good protection for stainless steel against corrosion in Ringer solution. - Abstract: The aim of this paper is to investigate the effect of the substrate bias, varied from 0 to −100 V, on the structure and properties of the TiO{sub 2} thin films for biomaterials applications. The TiO{sub 2} films were grown onto 304L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure titanium target in Ar-O{sub 2} gas mixture. The variation of substrate bias voltage from 0 to −100 V produces variations of structure and mechanical properties of the films. The deposited films were characterized by X-rays diffraction, nanoindentation and potentiodynamic polarization. Also, the friction and wear properties of TiO{sub 2} films sliding against alumina ball in air were investigated. Experimental results showed that the thickness increases for non-biased substrate voltage to Vs = −100 V from 820 nm to 1936 nm respectively. The roughness is in the range of 50 nm and 14 nm. XRD results show that all structures of the films are crystalline and changed with varying the bias voltage. The anatase phase is predominant in the low negative bias range (0–50 V). The hardness significantly increased from 2.2 to 6.4 GPa when the bias voltage was increased from 0 to 75 V and then slightly decrease to 5.1 GPa as further increased to 100 V. At the same time, the results indicate that TiO{sub 2} films deposited at −100 V exhibited better wear resistance compared to the other samples, i.e. the minimum wear rates and the lower coefficient of friction of 0.16. In order to simulate natural biological conditions, physiological serum (pH = 6.3), thermostatically controlled at 37 °C, was used as the electrolyte for the

The Effects of Halo Assembly Bias on Self-Calibration in Galaxy Cluster Surveys

Energy Technology Data Exchange (ETDEWEB)

Wu, Hao-Yi; Rozo, Eduardo; Wechsler, Risa H.

2008-08-07

Self-calibration techniques for analyzing galaxy cluster counts utilize the abundance and the clustering amplitude of dark matter halos. These properties simultaneously constrain cosmological parameters and the cluster observable-mass relation. It was recently discovered that the clustering amplitude of halos depends not only on the halo mass, but also on various secondary variables, such as the halo formation time and the concentration; these dependences are collectively termed 'assembly bias'. Applying modified Fisher matrix formalism, we explore whether these secondary variables have a significant impact on the study of dark energy properties using the self-calibration technique in current (SDSS) and the near future (DES, SPT, and LSST) cluster surveys. The impact of the secondary dependence is determined by (1) the scatter in the observable-mass relation and (2) the correlation between observable and secondary variables. We find that for optical surveys, the secondary dependence does not significantly influence an SDSS-like survey; however, it may affect a DES-like survey (given the high scatter currently expected from optical clusters) and an LSST-like survey (even for low scatter values and low correlations). For an SZ survey such as SPT, the impact of secondary dependence is insignificant if the scatter is 20% or lower but can be enhanced by the potential high scatter values introduced by a highly-correlated background. Accurate modeling of the assembly bias is necessary for cluster self-calibration in the era of precision cosmology.

Identification of voltage collapse point in self excited induction generator

Directory of Open Access Journals (Sweden)

Kalyanasundaram Rajambal

2009-10-01

Full Text Available This paper presents a direct equilibrium tracing method for identifying the voltage collapse point of a self-excitedinduction generator (SEIG without many trials. The technique solves differential and algebraic equations simultaneously toobtain the variables in a single step. The load parameter is also automatically varied during equilibrium tracing and thisreduces the computational time significantly. Comparing the simulation results obtained through conventional iterative procedure shows the effectiveness of the technique. An experimental verification on a 1.5KW induction machine validates the simulation results.

Dynamic range of low-voltage cascode current mirrors

DEFF Research Database (Denmark)

Bruun, Erik; Shah, Peter Jivan

1995-01-01

Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use....... The proposed configuration has the advantage of simplicity combined with a complete elimination of the need for fixed bias voltages or bias currents in the current mirror. A disadvantage is that it requires a higher input voltage to the current mirror...

The Difference-in-Difference Method: Assessing the Selection Bias in the Effects of Neighborhood Environment on Health

Science.gov (United States)

Grafova, Irina; Freedman, Vicki; Lurie, Nicole; Kumar, Rizie; Rogowski, Jeannette

2013-01-01

This paper uses the difference-in-difference estimation approach to explore the self-selection bias in estimating the effect of neighborhood economic environment on self-assessed health among older adults. The results indicate that there is evidence of downward bias in the conventional estimates of the effect of neighborhood economic disadvantage on self-reported health, representing a lower bound of the true effect. PMID:23623818

Noise performance in AlGaN/GaN HEMTs under high drain bias

International Nuclear Information System (INIS)

Pang Lei; Pu Yan; Lin Xinyu; Wang Liang; Liu Jian

2009-01-01

The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias. (semiconductor devices)

Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

Energy Technology Data Exchange (ETDEWEB)

Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M., E-mail: m.gregg@qub.ac.uk [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Ashcroft, C. M. [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Canalias, C. [Department of Applied Physics, Royal Institute of Technology, Roslagstullsbacken 21, 10691 Stockholm (Sweden); Gruverman, A. [Department of Physics and Astronomy, University of Nebraska Lincoln, Nebraska 68588–0299 (United States)

2014-08-14

Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

Biased Self-Perceptions, Peer Rejection, and Aggression in Children

Science.gov (United States)

White, Bradley A.; Kistner, Janet A.

2011-01-01

This study examined whether children's biased self-perceptions of peer acceptance are associated in a linear or curvilinear fashion with aggression, whether associations are moderated by peer rejection status, and whether associations apply uniquely to reactive aggression. Children in the 4th through 7th grades completed a self-report measure on…

A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

Science.gov (United States)

Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

2015-09-01

In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

Negative evaluation bias for positive self-referential information in borderline personality disorder.

Directory of Open Access Journals (Sweden)

Dorina Winter

Full Text Available Previous research has suggested that patients meeting criteria for borderline personality disorder (BPD display altered self-related information processing. However, experimental studies on dysfunctional self-referential information processing in BPD are rare. In this study, BPD patients (N = 30 and healthy control participants (N = 30 judged positive, neutral, and negative words in terms of emotional valence. Referential processing was manipulated by a preceding self-referential pronoun, an other-referential pronoun, or no referential context. Subsequently, patients and participants completed a free recall and recognition task. BPD patients judged positive and neutral words as more negative than healthy control participants when the words had self-reference or no reference. In BPD patients, these biases were significantly correlated with self-reported attributional style, particularly for negative events, but unrelated to measures of depressive mood. However, BPD patients did not differ from healthy control participants in a subsequent free recall task and a recognition task. Our findings point to a negative evaluation bias for positive, self-referential information in BPD. This bias did not affect the storage of information in memory, but may be related to self-attributions of negative events in everyday life in BPD.

Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

International Nuclear Information System (INIS)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2014-01-01

Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

Self-powered photogalvanic phosphorene photodetectors with high polarization sensitivity and suppressed dark current.

Science.gov (United States)

Li, Shuaishuai; Wang, Tao; Chen, Xiaoshuang; Lu, Wei; Xie, Yiqun; Hu, Yibin

2018-04-26

High polarization sensitivity, suppressed dark current and low energy consumption are all desirable device properties for photodetectors. In this work, we propose phosphorene-based photodetectors that are driven using photogalvanic effects (PGEs). The inversion symmetry of pristine phosphorene is broken using either application of an out-of-plane gate voltage or a heterostructure that is composed of the original phosphorene and blue phosphorene. The potential asymmetry enables PGEs under illumination by polarized light. Quantum transport calculations show that robust photocurrents are indeed generated by PGEs under a zero external bias voltage because of the broken inversion symmetry. These results indicate that the proposed photodetector is self-powered. In addition, the zero bias voltage eliminates the dark currents that are caused by application of an external bias voltage to traditional photodetectors. High polarization sensitivity to both linearly and circularly polarized light can also be realized, with extinction ratios ranging up to 102. The photoresponse of the proposed phosphorene/blue phosphorene heterostructure can be greatly enhanced by gating and is several orders of magnitude higher than that in gated phosphorene.

Culture modulates implicit ownership-induced self-bias in memory.

Science.gov (United States)

Sparks, Samuel; Cunningham, Sheila J; Kritikos, Ada

2016-08-01

The relation of incoming stimuli to the self implicitly determines the allocation of cognitive resources. Cultural variations in the self-concept shape cognition, but the extent is unclear because the majority of studies sample only Western participants. We report cultural differences (Asian versus Western) in ownership-induced self-bias in recognition memory for objects. In two experiments, participants allocated a series of images depicting household objects to self-owned or other-owned virtual baskets based on colour cues before completing a surprise recognition memory test for the objects. The 'other' was either a stranger or a close other. In both experiments, Western participants showed greater recognition memory accuracy for self-owned compared with other-owned objects, consistent with an independent self-construal. In Experiment 1, which required minimal attention to the owned objects, Asian participants showed no such ownership-related bias in recognition accuracy. In Experiment 2, which required attention to owned objects to move them along the screen, Asian participants again showed no overall memory advantage for self-owned items and actually exhibited higher recognition accuracy for mother-owned than self-owned objects, reversing the pattern observed for Westerners. This is consistent with an interdependent self-construal which is sensitive to the particular relationship between the self and other. Overall, our results suggest that the self acts as an organising principle for allocating cognitive resources, but that the way it is constructed depends upon cultural experience. Additionally, the manifestation of these cultural differences in self-representation depends on the allocation of attentional resources to self- and other-associated stimuli. Crown Copyright © 2016. Published by Elsevier B.V. All rights reserved.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

Science.gov (United States)

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-04-19

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

Science.gov (United States)

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-01-01

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode.

Science.gov (United States)

Chen, Horng-Shyang; Liu, Zhan Hui; Shih, Pei-Ying; Su, Chia-Ying; Chen, Chih-Yen; Lin, Chun-Han; Yao, Yu-Feng; Kiang, Yean-Woei; Yang, C C

2014-04-07

A reverse-biased voltage is applied to either device in the vertical configuration of two light-emitting diodes (LEDs) grown on patterned and flat Si (110) substrates with weak and strong quantum-confined Stark effects (QCSEs), respectively, in the InGaN/GaN quantum wells for independently controlling the applied voltage across and the injection current into the p-i-n junction in the lateral configuration of LED operation. The results show that more carrier supply is needed in the LED of weaker QCSE to produce a carrier screening effect for balancing the potential tilt in increasing the forward-biased voltage, when compared with the LED of stronger QCSE. The small spectral shift range in increasing injection current in the LED of weaker QCSE is attributed not only to the weaker QCSE, but also to its smaller device resistance such that a given increment of applied voltage leads to a larger increment of injection current. From a viewpoint of practical application in LED operation, by applying a reverse-biased voltage in the vertical configuration, the applied voltage and injection current in the lateral configuration can be independently controlled by adjusting the vertical voltage for keeping the emission spectral peak fixed.

Self-Presentation Bias in Surveys of Teachers' Educational Technology Practices

Science.gov (United States)

Kopcha, Theodore J.; Sullivan, Howard

2007-01-01

This study investigated self-presentation bias in the self-reports of teachers about their practices in six topic areas in educational technology (Instructional Design, Assessment, Learner-Centered Instruction, Curriculum Alignment, Attitudes about Computers, and Use of Computers with Students). Subjects were 50 middle-school teachers. Data were…

Phase diagrams and switching of voltage and magnetic field in dilute magnetic semiconductor nanostructures

Energy Technology Data Exchange (ETDEWEB)

Escobedo, R. [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, M.; Bonilla, L.L. [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Maths., Universidad Carlos III de Madrid, 28911 Leganes (Spain); Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain); Platero, G. [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain)

2010-04-15

The response of an n-doped dc voltage biased II-VI multi-quantum well dilute magnetic semiconductor nanostructure having its first well doped with magnetic (Mn) impurities is analyzed by sweeping wide ranges of both the voltage and the Zeeman level splitting induced by an external magnetic field. The level splitting versus voltage phase diagram shows regions of stable self-sustained current oscillations immersed in a region of stable stationary states. Transitions between stationary states and self-sustained current oscillations are systematically analyzed by both voltage and level splitting abrupt switching. Sudden voltage or/and magnetic field changes may switch on current oscillations from an initial stationary state, and reciprocally, current oscillations may disappear after sudden changes of voltage or/and magnetic field changes into the stable stationary states region. The results show how to design such a device to operate as a spin injector and a spin oscillator by tuning the Zeeman splitting (through the applied external magnetic field), the applied voltage and the sample configuration parameters (doping density, barrier and well widths, etc.) to select the desired stationary or oscillatory behavior. Phase diagram of Zeeman level splitting {delta} vs. dimensionless applied voltage {phi} for N = 10 QWs. White region: stable stationary states; black: stable self-sustained current oscillations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Self-Biased 215MHz Magnetoelectric NEMS Resonator for Ultra-Sensitive DC Magnetic Field Detection

Science.gov (United States)

Nan, Tianxiang; Hui, Yu; Rinaldi, Matteo; Sun, Nian X.

2013-06-01

High sensitivity magnetoelectric sensors with their electromechanical resonance frequencies electromechanical systems (NEMS) resonator with an electromechanical resonance frequency of 215 MHz based on an AlN/(FeGaB/Al2O3) × 10 magnetoelectric heterostructure for detecting DC magnetic fields. This magnetoelectric NEMS resonator showed a high quality factor of 735, and strong magnetoelectric coupling with a large voltage tunable sensitivity. The admittance of the magnetoelectric NEMS resonator was very sensitive to DC magnetic fields at its electromechanical resonance, which led to a new detection mechanism for ultra-sensitive self-biased RF NEMS magnetoelectric sensor with a low limit of detection of DC magnetic fields of ~300 picoTelsa. The magnetic/piezoelectric heterostructure based RF NEMS magnetoelectric sensor is compact, power efficient and readily integrated with CMOS technology, which represents a new class of ultra-sensitive magnetometers for DC and low frequency AC magnetic fields.

Effects of negative bias on structure and surface topography of titanium films deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Duan Linglong

2008-01-01

Pure Ti films were fabricated by bias sputtering. The deposition rate, the density and the surface topography of the Ti films at different negative bias were studied. The results show that the deposition rate is weakly affected when the bias power is low. As the bias voltage increases, the deposition rate decreases strongly due to the increase of the layer density and the resputtering phenomena. The film density increased and saturated to nearly bulk value at a bias voltage of -119.1 V. SEM view indicates that the columnar-type structure of Ti films can be destroyed by applying negative bias. The experiments demonstrated that a dense Ti film with more smooth surface can be produced by applying negative bias. (authors)

Biasing of Capacitive Micromachined Ultrasonic Transducers.

Science.gov (United States)

Caliano, Giosue; Matrone, Giulia; Savoia, Alessandro Stuart

2017-02-01

Capacitive micromachined ultrasonic transducers (CMUTs) represent an effective alternative to piezoelectric transducers for medical ultrasound imaging applications. They are microelectromechanical devices fabricated using silicon micromachining techniques, developed in the last two decades in many laboratories. The interest for this novel transducer technology relies on its full compatibility with standard integrated circuit technology that makes it possible to integrate on the same chip the transducers and the electronics, thus enabling the realization of extremely low-cost and high-performance devices, including both 1-D or 2-D arrays. Being capacitive transducers, CMUTs require a high bias voltage to be properly operated in pulse-echo imaging applications. The typical bias supply residual ripple of high-quality high-voltage (HV) generators is in the millivolt range, which is comparable with the amplitude of the received echo signals, and it is particularly difficult to minimize. The aim of this paper is to analyze the classical CMUT biasing circuits, highlighting the features of each one, and to propose two novel HV generator architectures optimized for CMUT biasing applications. The first circuit proposed is an ultralow-residual ripple (generator that uses an extremely stable sinusoidal power oscillator topology. The second circuit employs a commercially available integrated step-up converter characterized by a particularly efficient switching topology. The circuit is used to bias the CMUT by charging a buffer capacitor synchronously with the pulsing sequence, thus reducing the impact of the switching noise on the received echo signals. The small area of the circuit (about 1.5 cm 2 ) makes it possible to generate the bias voltage inside the probe, very close to the CMUT, making the proposed solution attractive for portable applications. Measurements and experiments are shown to demonstrate the effectiveness of the new approaches presented.

Indium tin oxide thin films by bias magnetron rf sputtering for heterojunction solar cells application

International Nuclear Information System (INIS)

Zhao Liang; Zhou Zhibin; Peng Hua; Cui Rongqiang

2005-01-01

In this investigation ITO thin films were prepared by bias magnetron rf sputtering technique at substrate temperature of 180 deg. C and low substrate-target distance for future a-Si:H/c-Si heterojunction (HJ) solar cells application. Microstructure, surface morphology, electrical and optical properties of these films were characterized and analyzed. The effects of ion bombardments on growing ITO films are well discussed. XRD analysis revealed a change in preferential orientation of polycrystalline structure from (2 2 2) to (4 0 0) plane with the increase of negative bias voltage. Textured surface were observed on AFM graphs of samples prepared at high negative bias. Hall measurements showed that the carrier density and Hall mobility of these ITO films are sensitive to the bias voltage applied. We attributed these effects to the sensitivity of energy of Ar + ions bombarding on growing films to the applied bias voltage in our experiments. At last the figure of merit was calculated to evaluate the quality of ITO thin films, the results of which show that sample prepared at bias voltage of -75 V is good to be used in HJ cells application

Influences of general self-efficacy and weight bias internalization on physical activity in bariatric surgery candidates.

Science.gov (United States)

Hübner, Claudia; Baldofski, Sabrina; Zenger, Markus; Tigges, Wolfgang; Herbig, Beate; Jurowich, Christian; Kaiser, Stefan; Dietrich, Arne; Hilbert, Anja

2015-01-01

Physical activity (PA) seems to be important for long-term weight loss after bariatric surgery; however, studies provide evidence for insufficient PA levels in bariatric patients. Research found self-efficacy to be associated with PA and weight bias internalization, for which an influence on mental and physical health has been shown in recent studies. The purpose of the present study was to investigate the influence of general self-efficacy on PA, mediated by weight bias internalization. In 179 bariatric surgery candidates, general self-efficacy, weight bias internalization, and different intensities of PA were assessed by self-report questionnaires. Structural equation modeling was used to analyze the assumed mediational relationship. After controlling for sociodemographic variables, weight bias internalization fully mediated the association between general self-efficacy and moderate-intense as well as vigorous-intense PA. Lower general self-efficacy predicted greater weight bias internalization, which in turn predicted lower levels of moderate-intense and vigorous-intense PA. The results suggest an influence of weight bias internalization on preoperative PA in bariatric surgery candidates. Subsequently, implementation of interventions addressing weight bias internalization in the usual treatment of bariatric surgery candidates might enhance patients' preoperative PA, while longitudinal analyses are needed to further examine its predictive value on PA after bariatric surgery. Copyright © 2015 American Society for Bariatric Surgery. Published by Elsevier Inc. All rights reserved.

Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

International Nuclear Information System (INIS)

Hiroki, Masanobu; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki

2014-01-01

We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated

Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

Energy Technology Data Exchange (ETDEWEB)

Hiroki, Masanobu, E-mail: hiroki.masanobu@lab.ntt.co.jp; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki [NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi 243-0198 (Japan)

2014-11-10

We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.

Spin effects in InAs self-assembled quantum dots

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Brasil Maria

2011-01-01

Full Text Available Abstract We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs in the center of a GaAs quantum well (QW. We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors

International Nuclear Information System (INIS)

Guang-Guo, Wu; Hong-Ri, Li; Kun, Liang; Ru, Yang; De-Jun, Han; Xue-Lei, Cao; Huan-Yu, Wang; Jun-Ming, An; Xiong-Wei, Hu

2009-01-01

Anode Boating voltage is predicted and investigated for silicon drift detectors (SDDs) with an active area of 5 mm 2 fabricated by a double-side parallel technology. It is demonstrated that the anode Boating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode Boating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (−50 V) of the SDD. Theoretical analysis and experimental results show that the anode Boating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p + inner ring and the n + anode. A fast checking method before detector encapsulation is proposed by employing the anode Boating voltage along with checking the leakage current, potential distribution and drift properties

Overvaluation of shape and weight as a mediator between self-esteem and weight bias internalization among patients with binge eating disorder.

Science.gov (United States)

Pearl, Rebecca L; White, Marney A; Grilo, Carlos M

2014-04-01

This study aimed to evaluate the roles of self-esteem and overvaluation of shape and weight in accounting for the internalization of weight bias among patients with binge eating disorder (BED) and obesity. Two hundred forty-five treatment-seeking individuals with BED and obesity were evaluated with diagnostic and semi-structured interviews and completed the Weight Bias Internalization Scale (WBIS) and the Rosenberg Self-Esteem Scale (RSE). Correlations and bootstrapping mediation analyses were computed to evaluate the relationships among self-esteem, overvaluation of shape/weight, and weight bias internalization. The effects of body mass index (BMI) and binge-eating frequency were also tested. Significant correlations emerged between WBIS, RSE, and overvaluation of shape and weight. BMI did not correlate with any measure, and binge-eating frequency only correlated with overvaluation. Mediation analyses provided support for the hypothesis that overvaluation of shape and weight mediates the relationship between self-esteem and weight bias internalization. These findings provide support to the proposed model that self-esteem and overvaluation of shape and weight contribute to weight bias internalization among patients with BED, which holds implications for clinical efforts to address weight bias and associated eating and weight-related psychopathology. Copyright © 2014 Elsevier Ltd. All rights reserved.

Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

Science.gov (United States)

Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

2015-12-01

Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

Analysis of bias voltage dependent spectral response in Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell

International Nuclear Information System (INIS)

Sogabe, Tomah; Ogura, Akio; Okada, Yoshitaka

2014-01-01

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V bias ) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V bias for Ga 0.51 In 0.49 P/Ga 0.99 In 0.01 As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V bias measurements. The profile of SR−V bias curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell

Self-serving episodic memory biases: Findings in the repressive coping style

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Lauren L Alston

2013-09-01

Full Text Available Individuals with a repressive coping style self-report low anxiety, but show high defensiveness and high physiological arousal. Repressors have impoverished negative autobiographical memories and are better able to suppress memory for negatively valenced and self-related laboratory materials when asked to do so. Research on spontaneous forgetting of negative information in repressors suggests that they show significant forgetting of negative items, but only after a delay. Unknown is whether increased forgetting after a delay is potentiated by self-relevance. Here we asked in three experiments whether repressors would show reduced episodic memories for negative self-relevant information when tested immediately versus after a 2-day delay. We predicted that repressors would show an exaggerated reduction in recall of negative self-relevant memories after a delay, at least without anew priming of this information. We tested a total of 300 participants (experiment 1: N= 95, experiment 2: N=106; experiment 3: N=99 of four types: repressors, high anxious, low anxious, and defensive high anxious individuals. Participants judged positive and negative adjectives with regard to self-descriptiveness, serving as incidental encoding. Surprise free recall was conducted immediately after encoding (experiment 1, after a 2-day delay (experiment 2 or after a 2-day delay following priming via a lexical decision task (experiment 3. In experiment 1, repressors showed a bias against negative self-relevant words in immediate recall. Such a bias was neither observed in delayed recall without priming nor in delayed recall with priming. Thus, counter to our hypothesis, negative information that was initially judged as self-relevant was not forgotten at a higher rate after a delay in repressors. We suggest that repressors may reinterpret initially negative information in a more positive light after a delay, and therefore no longer experience the need to bias their recall

Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

Science.gov (United States)

Bao, Meng-tian; Wang, Ying

2017-02-01

In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

Effect of applied bias voltage on corrosion-resistance for TiC 1- xN x and Ti 1- xNb xC 1- yN y coatings

Science.gov (United States)

Caicedo, J. C.; Amaya, C.; Yate, L.; Aperador, W.; Zambrano, G.; Gómez, M. E.; Alvarado-Rivera, J.; Muñoz-Saldaña, J.; Prieto, P.

2010-02-01

Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and "impurities" of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

High-output microwave detector using voltage-induced ferromagnetic resonance

International Nuclear Information System (INIS)

Shiota, Yoichi; Suzuki, Yoshishige; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

2014-01-01

We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque

High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

Science.gov (United States)

Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

2010-10-01

White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

Voltage Dependence of Supercapacitor Capacitance

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Szewczyk Arkadiusz

2016-09-01

Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

Biasing vector network analyzers using variable frequency and amplitude signals

Science.gov (United States)

Nobles, J. E.; Zagorodnii, V.; Hutchison, A.; Celinski, Z.

2016-08-01

We report the development of a test setup designed to provide a variable frequency biasing signal to a vector network analyzer (VNA). The test setup is currently used for the testing of liquid crystal (LC) based devices in the microwave region. The use of an AC bias for LC based devices minimizes the negative effects associated with ionic impurities in the media encountered with DC biasing. The test setup utilizes bias tees on the VNA test station to inject the bias signal. The square wave biasing signal is variable from 0.5 to 36.0 V peak-to-peak (VPP) with a frequency range of DC to 10 kHz. The test setup protects the VNA from transient processes, voltage spikes, and high-frequency leakage. Additionally, the signals to the VNA are fused to ½ amp and clipped to a maximum of 36 VPP based on bias tee limitations. This setup allows us to measure S-parameters as a function of both the voltage and the frequency of the applied bias signal.

Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

Science.gov (United States)

Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

2011-11-30

We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

Energy Technology Data Exchange (ETDEWEB)

Niang, K. M.; Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Barquinha, P. M. C.; Martins, R. F. P. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Cobb, B. [Holst Centre/TNO, High Tech Campus 31, 5656AE Eindhoven (Netherlands); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

2016-02-29

Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 10{sup 7} s{sup −1}. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

Model of 1/f noise in ion implanted resistors as a function of the resistance, determined by a reverse bias voltage

International Nuclear Information System (INIS)

Beck, H.G.E.

1979-01-01

A model is presented for the 1/f noise in ion-implanted resistors. The resistance was changed by a reverse bias voltage. The model explains the experimentally found square dependence between the relative 1/f noise intensity C/C 0 and the relative change in resistance R/R 0 . (author)

Simulation of HPIB propagation in biased charge collector

International Nuclear Information System (INIS)

Li Hongyu; Qiu Aici

2004-01-01

A 2.5D PIC simulation using KARAT code for inner charge propagation within biased charge collector for measuring HPIB is presented. The simulation results indicate that the charges were neutralized but the current non-neutralized in the biased charge collector. The influence of ions collected vs biased voltage of the collector was also simulated. -800 V biased voltage can meet the measurement of 500 keV HPIB, and this is consistent with the experimental results

Exploring the Self-Ownership Effect: Separating Stimulus and Response Biases

Science.gov (United States)

Golubickis, Marius; Falben, Johanna K.; Cunningham, William A.; Macrae, C. Neil

2018-01-01

Although ownership is acknowledged to exert a potent influence on various aspects of information processing, the origin of these effects remains largely unknown. Based on the demonstration that self-relevance facilitates perceptual judgments (i.e., the self-prioritization effect), here we explored the possibility that ownership enhances object…

Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films

Energy Technology Data Exchange (ETDEWEB)

Wu, Mingzhong [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Tian, Xiubo, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Li, Muqin [School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Gong, Chunzhi [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Wei, Ronghua [Southwest Research Institute, San Antonio, TX 78238 (United States)

2016-07-15

Highlights: • A novel Meshed Plasma Immersion Ion Deposition is proposed. • The deposited Si-DLC films possess denser structures and high deposition rate. • It is attributed to ion bombardment of the deposited films. • The ion energy can be independently controlled by an additional bias (novel set up). - Abstract: Meshed Plasma Immersion Ion Deposition (MPIID) using cage-like hollow cathode discharge is a modified process of conventional PIID, but it allows the deposition of thick diamond-like carbon (DLC) films (up to 50 μm) at a high deposition rate (up to 6.5 μm/h). To further improve the DLC film properties, a new approach to the MPIID process is proposed, in which the energy of ions incident to the sample surface can be independently controlled by an additional voltage applied between the samples and the metal meshed cage. In this study, the meshed cage was biased with a pulsed DC power supply at −1350 V peak voltage for the plasma generation, while the samples inside the cage were biased with a DC voltage from 0 V to −500 V with respect to the cage to study its effect. Si-DLC films were synthesized with a mixture of Ar, C{sub 2}H{sub 2} and tetramethylsilane (TMS). After the depositions, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS), Raman spectroscopy and nanoindentation were used to study the morphology, surface roughness, chemical bonding and structure, and the surface hardness as well as the modulus of elasticity of the Si-DLC films. It was observed that the intense ion bombardment significantly densified the films, reduced the surface roughness, reduced the H and Si contents, and increased the nanohardness (H) and modulus of elasticity (E), whereas the deposition rate decreased slightly. Using the H and E data, high values of H{sup 3}/E{sup 2} and H/E were obtained on the biased films, indicating the potential excellent mechanical and tribological properties of the films. In this

Hydrogen Permeation, and Mechanical and Tribological Behavior, of CrNx Coatings Deposited at Various Bias Voltages on IN718 by Direct Current Reactive Sputtering

Directory of Open Access Journals (Sweden)

Egor B. Kashkarov

2018-02-01

Full Text Available In the current work, the microstructure, hydrogen permeability, and properties of chromium nitride (CrNx thin films deposited on the Inconel 718 superalloy using direct current reactive sputtering are investigated. The influence of the substrate bias voltage on the crystal structure, mechanical, and tribological properties before and after hydrogen exposure was studied. It was found that increasing the substrate bias voltage leads to densification of the coating. X-ray diffraction (XRD results reveal a change from mixed fcc-CrN + hcp-Cr2N to the approximately stoichiometric hcp-Cr2N phase with increasing substrate bias confirmed by wavelength-dispersive X-ray spectroscopy (WDS. The texture coefficients of (113, (110, and (111 planes vary significantly with increasing substrate bias voltage. The hydrogen permeability was measured by gas-phase hydrogenation. The CrN coating deposited at 60 V with mixed c-CrN and (113 textured hcp-Cr2N phases exhibits the lowest hydrogen absorption at 873 K. It is suggested that the crystal orientation is only one parameter influencing the permeation resistance of the CrNx coating together with the film structure, the presence of mixing phases, and the packing density of the structure. After hydrogenation, the hardness increased for all coatings, which could be related to the formation of a Cr2O3 oxide film on the surface, as well as the defect formation after hydrogen loading. Tribological tests reveal that hydrogenation leads to a decrease of the friction coefficient by up to 40%. The lowest value of 0.25 ± 0.02 was reached for the CrNx coating deposited at 60 V after hydrogenation.

Electrode and limiter biasing experiments on the tokamak ISTTOK

International Nuclear Information System (INIS)

Silva, C.; Figueiredo, H.; Cabral, J.A.C.; Nedzelsky, I.; Varandas, C.A.F.

2003-01-01

In this contribution limiter and electrode biasing experiments are compared, in particular in what concerns their effects on the edge plasma parameters. For electrode AC bias a substantial increase (>50%) in the average plasma density is observed with positive voltage, without significant changes in the edge density, leading to steeper profiles. The ratio n e /Hα also increases significantly (>20%), indicating an improvement in gross particle confinement. The plasma potential profile is strongly modified as both the edge E r and its shear increase significantly. For positive limiter bias an increase in the average plasma density and the radiation losses is observed, resulting in almost no modification, or a slight, in particle confinement. Preliminary results of simultaneous electrode and limiter bias experiments show that the control of the plasma potential profile is very limited, since negative voltages do not modify the plasma parameters significantly. (author)

Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Murata, Koichi; Mitomo, Satoshi; Matsuda, Takuma; Yokoseki, Takashi [Saitama University, Sakuraku (Japan); National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki (Japan); Makino, Takahiro; Onoda, Shinobu; Takeyama, Akinori; Ohshima, Takeshi [National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki (Japan); Okubo, Shuichi; Tanaka, Yuki; Kandori, Mikio; Yoshie, Toru [Sanken Electric Co., Ltd., Niiza, Saitama (Japan); Hijikata, Yasuto [Saitama University, Sakuraku (Japan)

2017-04-15

Gamma-ray irradiation into vertical type n-channel hexagonal (4H)-silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) was performed under various gate biases. The threshold voltage for the MOSFETs irradiated with a constant positive gate bias showed a large negative shift, and the shift slightly recovered above 100 kGy. For MOSFETs with non- and a negative constant biases, no significant change in threshold voltage, V{sub th}, was observed up to 400 kGy. By changing the gate bias from positive bias to either negative or non-bias, the V{sub th} significantly recovered from the large negative voltage shift induced by 50 kGy irradiation with positive gate bias after only 10 kGy irradiation with either negative or zero bias. It indicates that the positive charges generated in the gate oxide near the oxide-SiC interface due to irradiation were removed or recombined instantly by the irradiation under zero or negative biases. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Dual-electrode biasing experiments in KT-5C device

International Nuclear Information System (INIS)

Yu Yi; Lu Ronghua; Wang Chen; Pan Geshen; Wen Yizhi; Yu Changxuan; Ma Jinxiu; Wan Shude; Liu Wandong

2005-01-01

Based on the single biasing electrode experiments to optimize the confinement of plasma in the device of KT-5C tokamak, dual-biasing electrodes were inserted into the KT5C plasma for the first time to explore the enhancement of the effects of biasing and the mechanisms of the biasing. By means of applying different combinations of biasing voltages to the dual electrodes, the changes in E r , which is the key factor for boosting up the Er x B flow shear, were observed. The time evolution showed the inner electrode played a major role in dual-biasing, for it always drew a larger current than the outer one. The outer electrode made little influence. It turned out that the dual-biasing electrodes were as effective as a single one, in improving plasma confinement, for the mechanism of biasing was essentially an edge effect. (author)

Weight Bias: A Systematic Review of Characteristics and Psychometric Properties of Self-Report Questionnaires.

Science.gov (United States)

Lacroix, Emilie; Alberga, Angela; Russell-Mathew, Shelly; McLaren, Lindsay; von Ranson, Kristin

2017-01-01

People living with overweight and obesity often experience weight-based stigmatization. Investigations of the prevalence and correlates of weight bias and evaluation of weight bias reduction interventions depend upon psychometrically-sound measurement. Our paper is the first to comprehensively evaluate the psychometric properties, use of people-first language within items, and suitability for use with various populations of available self-report measures of weight bias. We searched five electronic databases to identify English-language self-report questionnaires of weight bias. We rated each questionnaire's psychometric properties based on initial validation reports and subsequent use, and examined item language. Our systematic review identified 40 original self-report questionnaires. Most questionnaires were brief, demonstrated adequate internal consistency, and tapped key cognitive and affective dimensions of weight bias such as stereotypes and blaming. Current psychometric evidence is incomplete for many questionnaires, particularly with regard to the properties of test-retest reliability, sensitivity to change as well as discriminant and structural validity. Most questionnaires were developed prior to debate surrounding terminology preferences, and do not employ people-first language in the items administered to participants. We provide information and recommendations for clinicians and researchers in selecting psychometrically sound measures of weight bias for various purposes and populations, and discuss future directions to improve measurement of this construct. © 2017 The Author(s) Published by S. Karger GmbH, Freiburg.

Précis of Social Perception and Social Reality: Why accuracy dominates bias and self-fulfilling prophecy.

Science.gov (United States)

Jussim, Lee

2017-01-01

Social Perception and Social Reality (Jussim 2012) reviews the evidence in social psychology and related fields and reaches three conclusions: (1) Although errors, biases, and self-fulfilling prophecies in person perception are real, reliable, and occasionally quite powerful, on average, they tend to be weak, fragile, and fleeting. (2) Perceptions of individuals and groups tend to be at least moderately, and often highly accurate. (3) Conclusions based on the research on error, bias, and self-fulfilling prophecies routinely greatly overstate their power and pervasiveness, and consistently ignore evidence of accuracy, agreement, and rationality in social perception. The weight of the evidence - including some of the most classic research widely interpreted as testifying to the power of biased and self-fulfilling processes - is that interpersonal expectations relate to social reality primarily because they reflect rather than cause social reality. This is the case not only for teacher expectations, but also for social stereotypes, both as perceptions of groups, and as the bases of expectations regarding individuals. The time is long overdue to replace cherry-picked and unjustified stories emphasizing error, bias, the power of self-fulfilling prophecies, and the inaccuracy of stereotypes, with conclusions that more closely correspond to the full range of empirical findings, which includes multiple failed replications of classic expectancy studies, meta-analyses consistently demonstrating small or at best moderate expectancy effects, and high accuracy in social perception.

Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors

Science.gov (United States)

Jang, Jungkyu; Choi, Sungju; Kim, Jungmok; Park, Tae Jung; Park, Byung-Gook; Kim, Dong Myong; Choi, Sung-Jin; Lee, Seung Min; Kim, Dae Hwan; Mo, Hyun-Sun

2018-02-01

In this study, we investigate the effect of rising time (TR) of liquid gate bias (VLG) on transient responses in pH sensors based on Si nanowire ion-sensitive field-effect transistors (ISFETs). As TR becomes shorter and pH values decrease, the ISFET current takes a longer time to saturate to the pH-dependent steady-state value. By correlating VLG with the internal gate-to-source voltage of the ISFET, we found that this effect occurs when the drift/diffusion of mobile ions in analytes in response to VLG is delayed. This gives us useful insight on the design of ISFET-based point-of-care circuits and systems, particularly with respect to determining an appropriate rising time for the liquid gate bias.

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects.

Science.gov (United States)

Aghamohammadi, Mahdieh; Rödel, Reinhold; Zschieschang, Ute; Ocal, Carmen; Boschker, Hans; Weitz, R Thomas; Barrena, Esther; Klauk, Hagen

2015-10-21

The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor.

Capillary condensation and quantum vacuum effects on the pull-in voltage of electrostatic switches with self-affine rough plates

NARCIS (Netherlands)

Palasantzas, George

2006-01-01

In this work, we study the influence of capillary forces in combination with electrostatic and quantum vacuum generated forces on the pull-in voltage of microswitches having self-affine rough surfaces. This type of roughness is described by the rms roughness amplitude w, the in-plane correlation

A system for biasing a differential amplifier

International Nuclear Information System (INIS)

Barbier, Daniel; Ittel, J.M.; Poujois, Robert

1975-01-01

This invention concerns a system for biasing a differential amplifier. It particularly applies to the integrated differential amplifiers designed with MOS field effect transistors. Variations in the technological parameters may well cause the amplifying transistors to work outside their usual operational area, in other words outside the linear part of the transfer characteristic. To ensure that these transistors function correctly, it is necessary that the value of the voltage difference at the output be equally null. To do this and to centre on the so called 'rest' point of the amplifier transfer charateristic, the condition will be set that the output potentials of each amplifier transistor should have a zero value or a constant value as sum. With this in view, the bias on the source (generally a transistor powered by its grid bias voltage) supplying current to the two amplifying transistors fitted in parallel, is permanently adjusted in a suitable manner [fr

Influence of 60Co γ-ray irradiation and applied bias voltages on dielectric properties of Al/SiO2/p-Si (MIS) structures

International Nuclear Information System (INIS)

Tascioglu, I.; Uslu, H.; Aydemir, U.

2010-01-01

The MIS structures were exposed to 6 0Co γ-ray source at 5 kGy and radiation effect on dielectric properties has been investigated using admittance method (C-V and G/ω-V) by applying a small ac signal of 40 mV amplitude at 1 MHz and room temperature. The voltage dependent dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ), electric modulus(M*) and ac electrical conductivity (σ a c) profiles show an intersection behavior about 1.6 V. The ε', ε'', tanδ and σ a c values decrease with increasing dose before intersection point after than they become increase. Such behavior can be explained on the basis of Maxwell-Wagner interfacial polarization and restructuring and reordering of interface states charges due to the effect of γ-ray irradiation. Also, the imaginer part of M* exhibits a peak. It is concluded that all these parameters of MIS structure are strongly dependent on the radiation dose and applied bias voltage especially in depletion region.

AC bias operation of the perpendicular biased ferrite tuned cavity for the TRIUMF KAON Factory booster synchrotron

International Nuclear Information System (INIS)

Poirier, R.L.; Enegren, T.A.; Enchevich, I.B.

1991-05-01

The RF cavity for the booster synchrotron requires a frequency swing from 46 MHz at a repetition rate of 50 Hz and a maximum accelerating gap voltage of 65 kV. A DC biased prototype cavity built at LANL using perpendicular-biased yttrium-garnet ferrites, rather than the more conventional parallel-biased NiZn ferrites, has now undergone major reconstruction at TRIUMF for AC bias operation. RF signal level measurements have shown that the frequency swing at a repetition rate of 50 Hz can be accomplished and still handle the eddy current losses in the cavity structures with minimal effect on the magnetizing field. The prototype cavity is now undergoing high power RF tests with full power AC bias operation. The results of these tests and operational experience is reported. (Author) ref., 6 figs

Low-power operation using self-timed circuits and adaptive scaling of the supply voltage

DEFF Research Database (Denmark)

Nielsen, Lars Skovby; Niessen, C.; Sparsø, Jens

1994-01-01

Recent research has demonstrated that for certain types of applications like sampled audio systems, self-timed circuits can achieve very low power consumption, because unused circuit parts automatically turn into a stand-by mode. Additional savings may be obtained by combining the self......-timed circuits with a mechanism that adaptively adjusts the supply voltage to the smallest possible, while maintaining the performance requirements. This paper describes such a mechanism, analyzes the possible power savings, and presents a demonstrator chip that has been fabricated and tested. The idea...... of voltage scaling has been used previously in synchronous circuits, and the contributions of the present paper are: 1) the combination of supply scaling and self-timed circuitry which has some unique advantages, and 2) the thorough analysis of the power savings that are possible using this technique.>...

Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

Directory of Open Access Journals (Sweden)

Chaichana Amornchai

2017-01-01

Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

Angular dependence of Si3N4 etch rates and the etch selectivity of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma

International Nuclear Information System (INIS)

Lee, Jin-Kwan; Lee, Gyeo-Re; Min, Jae-Ho; Moon, Sang Heup

2007-01-01

The dependence of Si 3 N 4 etch rates and the etch selectivity of SiO 2 to Si 3 N 4 on ion-incident angles was studied for different bias voltages in a high-density C 4 F 8 plasma. A Faraday cage and specially designed substrate holders were used to accurately control the angles of incident ions on the substrate surface. The normalized etch yield (NEY), defined as the etch yield obtained at a given ion-incident angle normalized to that obtained on a horizontal surface, was unaffected by the bias voltage in Si 3 N 4 etching, but it increased with the bias voltage in SiO 2 etching in the range of -100 to -300 V. The NEY changed showing a maximum with an increase in the ion-incident angle in the etching of both substrates. In the Si 3 N 4 etching, a maximum NEY of 1.7 was obtained at 70 deg. in the above bias voltage range. However, an increase in the NEY at high ion-incident angles was smaller for SiO 2 than for Si 3 N 4 and, consequently, the etch selectivity of SiO 2 to Si 3 N 4 decreased with an increase in the ion-incident angle. The etch selectivity decreased to a smaller extent at high bias voltage because the NEY of SiO 2 had increased. The characteristic changes in the NEY for different substrates could be correlated with the thickness of a steady-state fluorocarbon (CF x ) film formed on the substrates

The impact of the biasing radial electric field on the SOL in a divertor tokamak

International Nuclear Information System (INIS)

Rozhansky, V.; Tendler, M.

1993-01-01

Strong radial electric field can be induced within the SOL in a divertor tokamak by applying a voltage to divertor plates with respect to the first wall. This biasing scheme results in the strong radial electric field which is much larger than the natural electric field, usually of the order T e /e. Experiments employing this biasing scheme were carried out on the tokamak TdeV. Many interesting effects such as - modifications of the density profile and radial transport of impurities as a function of the polarity and the magnitude of the biasing voltage, the generation of the flux surface average toroidal rotation proportional to the applied voltage, redistribution of the plasma outflow onto divertor plates and so on - were demonstrated to result from the biasing. Furthermore, in contrast to studies carried out employing a different biasing scheme which primarily results in a poloidal electric field, the strong radial electric field impacts more significantly within SOL than the poloidal electric field. Here, we aim to show that the main effects observed experimentally follow from the analysis, provided continuity and momentum balances are employed invoking anomalous viscosity and inertia. (author) 4 refs

Bunch motion in the presence of the self-induced voltage due to a reactive impedance with RF off

Energy Technology Data Exchange (ETDEWEB)

Shaposhnikova, E [European Organization for Nuclear Research, Geneva (Switzerland)

1996-08-01

Analytic self-consistent solutions have been found for the nonlinear Vlasov equation describing different types of behaviour with time of an intense bunch under the influence of voltage induced due to a reactive part of broad band impedance. The problem is solved for the particular type of the initial distribution function in longitudinal phase space which is elliptic and corresponds to parabolic line density. This paper is devoted to the consideration of the effects in the machine with RF off. In this case the induced voltage is changing with time and can significantly affect bunch motion. The same method applied in the case with RF on allows the time dependent effects of potential well distortion to be analysed. Numerical estimations for the CERN SPS show that effect of induced voltage is important for beam manipulations with RF off. Measurements of the change in the rate of debunching with intensity can be used to estimate the value of the reactive impedance. (author)

Challenging emotional prejudice by changing self-concept: priming independent self-construal reduces racial in-group bias in neural responses to other's pain.

Science.gov (United States)

Wang, Chenbo; Wu, Bing; Liu, Yi; Wu, Xinhuai; Han, Shihui

2015-09-01

Humans show stronger empathy for in-group compared with out-group members' suffering and help in-group members more than out-group members. Moreover, the in-group bias in empathy and parochial altruism tend to be more salient in collectivistic than individualistic cultures. This work tested the hypothesis that modifying self-construals, which differentiate between collectivistic and individualistic cultural orientations, affects in-group bias in empathy for perceived own-race vs other-race pain. By scanning adults using functional magnetic resonance imaging, we found stronger neural activities in the mid-cingulate, left insula and supplementary motor area (SMA) in response to racial in-group compared with out-group members' pain after participants had been primed with interdependent self-construals. However, the racial in-group bias in neural responses to others' pain in the left SMA, mid-cingulate cortex and insula was significantly reduced by priming independent self-construals. Our findings suggest that shifting an individual's self-construal leads to changes of his/her racial in-group bias in neural responses to others' suffering. © The Author (2015). Published by Oxford University Press. For Permissions, please email: journals.permissions@oup.com.

High Voltage Solar Array Arc Testing for a Direct Drive Hall Effect Thruster System

Science.gov (United States)

Schneider, Todd; Carruth, M. R., Jr.; Vaughn, J. A.; Jongeward, G. A.; Mikellides, I. G.; Ferguson, D.; Kerslake, T. W.; Peterson, T.; Snyder, D.; Hoskins, A.

2004-01-01

The deleterious effects of spacecraft charging are well known, particularly when the charging leads to arc events. The damage that results from arcing can severely reduce system lifetime and even cause critical system failures. On a primary spacecraft system such as a solar array, there is very little tolerance for arcing. Motivated by these concerns, an experimental investigation was undertaken to determine arc thresholds for a high voltage (200-500 V) solar array in a plasma environment. The investigation was in support of a NASA program to develop a Direct Drive Hall-Effect Thruster (D2HET) system. By directly coupling the solar array to a Hall-effect thruster, the D2HET program seeks to reduce mass, cost and complexity commonly associated with the power processing in conventional power systems. In the investigation, multiple solar array technologies and configurations were tested. The cell samples were biased to a negative voltage, with an applied potential difference between them, to imitate possible scenarios in solar array strings that could lead to damaging arcs. The samples were tested in an environment that emulated a low-energy, HET-induced plasma. Short duration trigger arcs as well as long duration sustained arcs were generated. Typical current and voltage waveforms associated with the arc events are presented. Arc thresholds are also defined in terms of voltage, current and power. The data will be used to propose a new, high-voltage (greater than 300 V) solar array design for which the likelihood of damage from arcing is minimal.

The Mediating Effect of Self-Evaluation Bias of Competence on the Relationship between Parental Emotional Support and Children's Academic Functioning

Science.gov (United States)

Côté, Sébastien; Bouffard, Thérèse; Vezeau, Carole

2014-01-01

Background: It is well established that children's self-evaluation bias of competence is related to the quality of parent-child emotional relationship. Such biases are linked to children's academic functioning and achievement. Links have also been established between the quality of parent-child emotional relationship and children's…

Power supply and impedance matching to drive technological radio-frequency plasmas with customized voltage waveforms.

Science.gov (United States)

Franek, James; Brandt, Steven; Berger, Birk; Liese, Martin; Barthel, Matthias; Schüngel, Edmund; Schulze, Julian

2015-05-01

We present a novel radio-frequency (RF) power supply and impedance matching to drive technological plasmas with customized voltage waveforms. It is based on a system of phase-locked RF generators that output single frequency voltage waveforms corresponding to multiple consecutive harmonics of a fundamental frequency. These signals are matched individually and combined to drive a RF plasma. Electrical filters are used to prevent parasitic interactions between the matching branches. By adjusting the harmonics' phases and voltage amplitudes individually, any voltage waveform can be approximated as a customized finite Fourier series. This RF supply system is easily adaptable to any technological plasma for industrial applications and allows the commercial utilization of process optimization based on voltage waveform tailoring for the first time. Here, this system is tested on a capacitive discharge based on three consecutive harmonics of 13.56 MHz. According to the Electrical Asymmetry Effect, tuning the phases between the applied harmonics results in an electrical control of the DC self-bias and the mean ion energy at almost constant ion flux. A comparison with the reference case of an electrically asymmetric dual-frequency discharge reveals that the control range of the mean ion energy can be significantly enlarged by using more than two consecutive harmonics.

Optimizing the ingredients for imagery-based interpretation bias modification for depressed mood: is self-generation more effective than imagination alone?

Science.gov (United States)

Rohrbacher, Heike; Blackwell, Simon E; Holmes, Emily A; Reinecke, Andrea

2014-01-01

Negative interpretation is thought to be crucial in the development and maintenance of depression. Recently developed cognitive bias modification paradigms, intending to change these biases towards a more optimistic interpretation tendency (CBM-I), seem to offer new promising implications for cognitive therapy innovation. This study aimed to increase our knowledge of the underlying mechanisms of action of imagery-based CBM-I in the context of depressed mood. We therefore compared the efficacy of CBM-I requiring participants to imagine standardized positive resolutions to a novel, more active training version that required participants to generate the positive interpretations themselves. Fifty-four participants were randomly allocated to (1) standardized CBM-I, (2) self-generation CBM-I or (3) a control group. Outcome measures included self-report mood measures and a depression-related interpretation bias measure. Both positive training variants significantly increased the tendency to interpret fresh ambiguous material in an optimistic manner. However, only the standardized imagery CBM-I paradigm positively influenced mood. © 2013 Published by Elsevier B.V.

Optimizing the ingredients for imagery-based interpretation bias modification for depressed mood: Is self-generation more effective than imagination alone?☆

Science.gov (United States)

Rohrbacher, Heike; Blackwell, Simon E.; Holmes, Emily A.; Reinecke, Andrea

2014-01-01

Negative interpretation is thought to be crucial in the development and maintenance of depression. Recently developed cognitive bias modification paradigms, intending to change these biases towards a more optimistic interpretation tendency (CBM-I), seem to offer new promising implications for cognitive therapy innovation. This study aimed to increase our knowledge of the underlying mechanisms of action of imagery-based CBM-I in the context of depressed mood. We therefore compared the efficacy of CBM-I requiring participants to imagine standardized positive resolutions to a novel, more active training version that required participants to generate the positive interpretations themselves. Fifty-four participants were randomly allocated to (1) standardized CBM-I, (2) self-generation CBM-I or (3) a control group. Outcome measures included self-report mood measures and a depression-related interpretation bias measure. Both positive training variants significantly increased the tendency to interpret fresh ambiguous material in an optimistic manner. However, only the standardized imagery CBM-I paradigm positively influenced mood. PMID:24113076

Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

Energy Technology Data Exchange (ETDEWEB)

Sogabe, Tomah, E-mail: Sogabe@mbe.rcast.u-tokyo.ac.jp; Ogura, Akio; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504 (Japan)

2014-02-21

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V{sub bias} measurements. The profile of SR−V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

Impulsivity moderates the effect of approach bias modification on healthy food consumption.

Science.gov (United States)

Kakoschke, Naomi; Kemps, Eva; Tiggemann, Marika

2017-10-01

The study aimed to modify approach bias for healthy and unhealthy food and to determine its effect on subsequent food consumption. In addition, we investigated the potential moderating role of impulsivity in the effect of approach bias re-training on food consumption. Participants were 200 undergraduate women (17-26 years) who were randomly allocated to one of five conditions of an approach-avoidance task varying in the training of an approach bias for healthy food, unhealthy food, and non-food cues in a single session of 10 min. Outcome variables were approach bias for healthy and unhealthy food and the proportion of healthy relative to unhealthy snack food consumed. As predicted, approach bias for healthy food significantly increased in the 'avoid unhealthy food/approach healthy food' condition. Importantly, the effect of training on snack consumption was moderated by trait impulsivity. Participants high in impulsivity consumed a greater proportion of healthy snack food following the 'avoid unhealthy food/approach healthy food' training. This finding supports the suggestion that automatic processing of appetitive cues has a greater influence on consumption behaviour in individuals with poor self-regulatory control. Copyright © 2017 Elsevier Ltd. All rights reserved.

Accuracy and bias of ICT self-efficacy: an empirical study into students' over- and underestimation of their ICT competences

NARCIS (Netherlands)

Aesaert, K.; Voogt, J.; Kuiper, E.; van Braak, J.

2017-01-01

Most studies on the assessment of ICT competences use measures of ICT self-efficacy. These studies are often accused that they suffer from self-reported bias, i.e. students can over- and/or underestimate their ICT competences. As such, taking bias and accuracy of ICT self-efficacy into account,

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

Science.gov (United States)

Tezuka, N.; Oikawa, S.; Matsuura, M.; Sugimoto, S.; Nishimura, K.; Irisawa, T.; Nagamine, Y.; Tsunekawa, K.

2018-05-01

The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

Self-control predicts attentional bias assessed by online shopping-related Stroop in high online shopping addiction tendency college students.

Science.gov (United States)

Jiang, Zhaocai; Zhao, Xiuxin; Li, Cancan

2017-05-01

The aim of this study was to examine the relationships of personality types (i.e., self-control, BAS/BIS) and online shopping addiction (OSA) behavior and to investigate whether high-OSA tendency individuals display attentional biases toward online shopping-related (OS-related) stimuli as well as the links between attentional bias and personality types. The study included 98 college students divided into three groups (i.e., high-, medium- and low-OSA) according to their OSA behavior. The personality types (i.e., self-control, BAS/BIS) and OSA behavior were investigated by questionnaires. The attentional bias was evaluated by the OS-related Stroop and dot-probe task (DPT) paradigms. OSA was positively predicted by time spent on online shopping per day and average consumption for online shopping monthly, and negatively by self-control. High-OSA individuals displayed significant attentional biases toward OS-related stimuli in the Stroop, but not DPT paradigm. Moreover, the attentional bias toward OSA-related stimuli in high-OSA individuals was negatively correlated with self-control. These findings demonstrated the critical role of self-control in OSA behavior and attentional bias to OS-related stimuli in high-OSA individuals, indicating that more importance should be attached to self-control for the clinical intervention of online shopping addiction in future studies. Copyright © 2017 Elsevier Inc. All rights reserved.

Differential effects of weight bias experiences and internalization on exercise among women with overweight and obesity.

Science.gov (United States)

Pearl, Rebecca L; Puhl, Rebecca M; Dovidio, John F

2015-12-01

This study investigated the effects of experiences with weight stigma and weight bias internalization on exercise. An online sample of 177 women with overweight and obesity (M(age) = 35.48 years, M(BMI) = 32.81) completed questionnaires assessing exercise behavior, self-efficacy, and motivation; experiences of weight stigmatization; weight bias internalization; and weight-stigmatizing attitudes toward others. Weight stigma experiences positively correlated with exercise behavior, but weight bias internalization was negatively associated with all exercise variables. Weight bias internalization was a partial mediator between weight stigma experiences and exercise behavior. The distinct effects of experiencing versus internalizing weight bias carry implications for clinical practice and public health. © The Author(s) 2014.

Some device implications of voltage controlled magnetic anisotropy in Co/Gd2O3 thin films through REDOX chemistry

Science.gov (United States)

Hao, Guanhua; Noviasky, Nicholas; Cao, Shi; Sabirianov, Ildar; Yin, Yuewei; Ilie, Carolina C.; Kirianov, Eugene; Sharma, Nishtha; Sokolov, Andrei; Marshall, Andrew; Xu, Xiaoshan; Dowben, Peter A.

2018-04-01

The effect of intermediate interfacial oxidation on the in-plane magnetization of multilayer stack Pt/Co/Gd2O3, on a p-type silicon substrate, has been investigated by magneto-optical Kerr effect (MOKE) measurements, the anomalous Hall effect, and magnetoresistance measurements. While voltage controlled perpendicular magnetic anisotropy of a metal/oxide heterostructure is known, this heterostructure displays an inverse relationship between voltage and coercivity. The anomalous Hall effect demonstrates a significant change in hysteresis, with the applied bias sign. There is a higher perpendicular magnetic anisotropy with positive bias exposure.

Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions

Directory of Open Access Journals (Sweden)

Chip-Hong Chang

2016-08-01

Full Text Available Static Random Access Memory (SRAM has recently been developed into a physical unclonable function (PUF for generating chip-unique signatures for hardware cryptography. The most compelling issue in designing a good SRAM-based PUF (SPUF is that while maximizing the mismatches between the transistors in the cross-coupled inverters improves the quality of the SPUF, this ironically also gives rise to increased memory read/write failures. For this reason, the memory cells of existing SPUFs cannot be reused as storage elements, which increases the overheads of cryptographic system where long signatures and high-density storage are both required. This paper presents a novel design methodology for dual-mode SRAM cell optimization. The design conflicts are resolved by using word-line voltage modulation, dynamic voltage scaling, negative bit-line and adaptive body bias techniques to compensate for reliability degradation due to transistor downsizing. The augmented circuit-level techniques expand the design space to achieve a good solution to fulfill several otherwise contradicting key design qualities for both modes of operation, as evinced by our statistical analysis and simulation results based on complementary metal–oxide–semiconductor (CMOS 45 nm bulk Predictive Technology Model.

Self-Biased Differential Rectifier with Enhanced Dynamic Range for Wireless Powering

KAUST Repository

Ouda, Mahmoud H.; Khalil, Waleed; Salama, Khaled N.

2016-01-01

A self-biased, cross-coupled, differential rectifier is proposed with enhanced power-conversion efficiency over an extended range of input power. A prototype is designed for UHF 433MHz RF power-harvesting applications and is implemented using 0.18μm

High Voltage GaN Schottky Rectifiers

Energy Technology Data Exchange (ETDEWEB)

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

The effect of framing on surrogate optimism bias: A simulation study.

Science.gov (United States)

Patel, Dev; Cohen, Elan D; Barnato, Amber E

2016-04-01

To explore the effect of emotion priming and physician communication behaviors on optimism bias. We conducted a 5 × 2 between-subject randomized factorial experiment using a Web-based interactive video designed to simulate a family meeting for a critically ill spouse/parent. Eligibility included age at least 35 years and self-identifying as the surrogate for a spouse/parent. The primary outcome was the surrogate's election of code status. We defined optimism bias as the surrogate's estimate of prognosis with cardiopulmonary resuscitation (CPR) > their recollection of the physician's estimate. Of 373 respondents, 256 (69%) logged in and were randomized and 220 (86%) had nonmissing data for prognosis. Sixty-seven (30%) of 220 overall and 56 of (32%) 173 with an accurate recollection of the physician's estimate had optimism bias. Optimism bias correlated with choosing CPR (P optimism bias. Framing the decision as the patient's vs the surrogate's (25% vs 36%, P = .066) and describing the alternative to CPR as "allow natural death" instead of "do not resuscitate" (25% vs 37%, P = .035) decreased optimism bias. Framing of CPR choice during code status conversations may influence surrogates' optimism bias. Copyright © 2015 Elsevier Inc. All rights reserved.

Self-reverse-biased solar panel optical receiver for simultaneous visible light communication and energy harvesting.

Science.gov (United States)

Shin, Won-Ho; Yang, Se-Hoon; Kwon, Do-Hoon; Han, Sang-Kook

2016-10-31

We propose a self-reverse-biased solar panel optical receiver for energy harvesting and visible light communication. Since the solar panel converts an optical component into an electrical component, it provides both energy harvesting and communication. The signal component can be separated from the direct current component, and these components are used for communication and energy harvesting. We employed a self-reverse-biased receiver circuit to improve the communication and energy harvesting performance. The reverse bias on the solar panel improves the responsivity and response time. The proposed system achieved 17.05 mbps discrete multitone transmission with a bit error rate of 1.1 x 10-3 and enhanced solar energy conversion efficiency.

Social desirability bias in dietary self-report may compromise the validity of dietary intake measures.

Science.gov (United States)

Hebert, J R; Clemow, L; Pbert, L; Ockene, I S; Ockene, J K

1995-04-01

Self-report of dietary intake could be biased by social desirability or social approval thus affecting risk estimates in epidemiological studies. These constructs produce response set biases, which are evident when testing in domains characterized by easily recognizable correct or desirable responses. Given the social and psychological value ascribed to diet, assessment methodologies used most commonly in epidemiological studies are particularly vulnerable to these biases. Social desirability and social approval biases were tested by comparing nutrient scores derived from multiple 24-hour diet recalls (24HR) on seven randomly assigned days with those from two 7-day diet recalls (7DDR) (similar in some respects to commonly used food frequency questionnaires), one administered at the beginning of the test period (pre) and one at the end (post). Statistical analysis included correlation and multiple linear regression. Cross-sectionally, no relationships between social approval score and the nutritional variables existed. Social desirability score was negatively correlated with most nutritional variables. In linear regression analysis, social desirability score produced a large downward bias in nutrient estimation in the 7DDR relative to the 24HR. For total energy, this bias equalled about 50 kcal/point on the social desirability scale or about 450 kcal over its interquartile range. The bias was approximately twice as large for women as for men and only about half as large in the post measures. Individuals having the highest 24HR-derived fat and total energy intake scores had the largest downward bias due to social desirability. We observed a large downward bias in reporting food intake related to social desirability score. These results are consistent with the theoretical constructs on which the hypothesis is based. The effect of social desirability bias is discussed in terms of its influence on epidemiological estimates of effect. Suggestions are made for future work

COMT Val(108/158)Met polymorphism effects on emotional brain function and negativity bias.

Science.gov (United States)

Williams, Leanne M; Gatt, Justine M; Grieve, Stuart M; Dobson-Stone, Carol; Paul, Robert H; Gordon, Evian; Schofield, Peter R

2010-11-15

Biases toward processing negative versus positive information vary as a function of level of awareness, and are modulated by monoamines. Excessive biases are associated with individual differences in mood and emotional stability, and emotional disorder. Here, we examined the impact of the catechol-O-methyltransferase (COMT) Val(108/158)Met polymorphism, involved in dopamine and norepinephrine catabolism, on both emotional brain function and self-reported negativity bias. COMT genotyping and self-reported level of negativity bias were completed for 46 healthy participants taking part in the Brain Resource International Database. Functional MRI was undertaken during perception of facial expressions of fear and happiness presented under unmasked (consciously identified) and masked (to prevent conscious detection) conditions. Structural MR images were also acquired. A greater number of COMT Met alleles predicted increased activation in brainstem, amygdala, basal ganglia and medial prefrontal regions for conscious fear, but decreased activation for conscious happiness. This pattern was also apparent for brainstem activation for the masked condition. Effects were most apparent for females. These differences could not be explained by gray matter variations. The Met-related profile of activation, particularly prefrontally, predicted greater negativity bias associated with risk for emotional disorder. The findings suggest that the COMT Met allele modulates neural substrates of negative versus positive emotion processing. This effect may contribute to negativity biases, which confer susceptibility for emotional disorders. Copyright 2010 Elsevier Inc. All rights reserved.

Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

Energy Technology Data Exchange (ETDEWEB)

Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

2008-06-15

To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

Spatial solitons in biased photovoltaic photorefractive materials with the pyroelectric effect

Energy Technology Data Exchange (ETDEWEB)

Katti, Aavishkar; Yadav, R.A., E-mail: rayadav@bhu.ac.in

2017-01-23

Spatial solitons in biased photorefractive media due to the photovoltaic effect and the pyroelectric effect are investigated. The pyroelectric field considered is induced due to the heating by the incident beam's energy. These solitons can be called screening photovoltaic pyroelectric solitons. It is shown that the solitons can exist in the bright and dark realizations. The conditions for formation of these solitons are discussed. Relevant example is considered to illustrate the self trapping of such solitons. The external electric field interacts with the photovoltaic field and the pyroelectric field to either support or oppose the self trapping. - Highlights: • Effect of pyroelectric field on screening photovoltaic solitons is studied. • Illumination induced pyroelectric field is considered for the first time. • Self trapping depends on external, pyroelectric and photovoltaic space charge field.

Theory and experimental study of biased charge collector for measuring HPIB

International Nuclear Information System (INIS)

He Xiaoping; Wang Haiyang; Sun Jianfeng; Yang Hailiang; Qiu Aici; Tang Junping; Li Jingya; Li Hongyu

2004-01-01

Structure of the biased charge collector for measuring HPIB (High-power ion beam) is introduced in this paper. The inner charge propagation process of HPIB in the biased charge collector was simulated with KARAT PIC code. The simulation results indicated that charge was neutralized but current was not neutralized in the biased charge collector. The influence of biased voltage and aperture diameter were also simulated. A -800V biased voltage can meet the requirement for measuring 500 keV HPIB, and this is consistent with the experimental results

Right perceptual bias and self-face recognition in individuals with congenital prosopagnosia.

Science.gov (United States)

Malaspina, Manuela; Albonico, Andrea; Daini, Roberta

2016-01-01

The existence of a drift to base judgments more on the right half-part of facial stimuli, which falls in the observer's left visual field (left perceptual bias (LPB)), in normal individuals has been demonstrated. However, less is known about the existence of this phenomenon in people affected by face impairment from birth, namely congenital prosopagnosics. In the current study, we aimed to investigate the presence of the LPB under face impairment conditions using chimeric stimuli and the most familiar face of all: the self-face. For this purpose we tested 10 participants with congenital prosopagnosia and 21 healthy controls with a face matching task using facial stimuli, involving a spatial manipulation of the left and the right hemi-faces of self-photos and photos of others. Even though congenital prosopagnosics performance was significantly lower than that of controls, both groups showed a consistent self-face advantage. Moreover, congenital prosopagnosics showed optimal performance when the right side of their face was presented, that is, right perceptual bias, suggesting a differential strategy for self-recognition in those subjects. A possible explanation for this result is discussed.

The effect of interpersonal rejection on attentional biases regarding thin-ideal and non-thin images: The moderating role of body weight- and shape-based self-worth.

Science.gov (United States)

Rieger, Elizabeth; Dolan, Ashleigh; Thomas, Brittany; Bell, Jason

2017-09-01

Interpersonal dysfunction and weight/shape-based self-worth have been implicated as key constructs for eating disorders, although the relationship between these two concepts is under-researched. This study investigated the moderating role of weight/shape-based self-worth in terms of the impact of interpersonal rejection on attentional bias regarding thin-ideal and non-thin images. Participants were 94 females without an eating disorder, who were exposed to either interpersonal rejection or acceptance (using the Cyberball paradigm), and subsequently assessed in terms of their attentional biases regarding thin-ideal and non-thin images. Results revealed that weight/shape-based self-worth moderated the relationship between interpersonal rejection/acceptance and attentional biases for thin-ideal (but not non-thin) images. Specifically, participants with a greater tendency to base their self-worth on weight/shape demonstrated reduced avoidance of thin-ideal images when rejected relative to those who were accepted. The findings support the role of interpersonal rejection in eliciting attentional disturbances among those with higher body weight/shape-based self-worth. Copyright © 2017 Elsevier Ltd. All rights reserved.

Numerical simulation of the self-pumped long Josephson junction using a modified sine-Gordon model

DEFF Research Database (Denmark)

Sobolev, A.; Pankratov, A.; Mygind, Jesper

2006-01-01

We have numerically investigated the dynamics of a long Josephson junction (flux-flow oscillator) biased by a DC current in the presence of magnetic field. The study is performed in the frame of the modified sine-Gordon model, which includes the surface losses, RC-load at both FFO ends and the self-pumping...... effect. In our model the dumping parameter depends both on the spatial coordinate and the amplitude of the AC voltage. In order to find the DC FFO voltage the damping parameter has to be calculated by successive approximations and time integration of the perturbed sine-Gordon equation. The modified model...

Readdressing gender bias in the Coopersmith Self-Esteem Inventory-short form.

Science.gov (United States)

Chapman, Paula L; Mullis, Ann K

2002-12-01

The short form of the Coopersmith Self-Esteem Inventory (SEI) was evaluated for gender bias. The authors replicated a study by L. Francis and D. James (1998) and administered the SEI to 361 middle and high school students (146 boys, 2l5 girls). They found that gender bias existed in 6 of the 25 items on the SEI, with 5 of those items favoring boys. Because recent literature indicates that male and female adolescents experience problems in different areas of their lives, the authors suggest that researchers consider such differences when selecting items for a standardized measure.

Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

International Nuclear Information System (INIS)

Liu Fei; Yang Sen; Zhou Dong; Lu Hai; Zhang Rong; Zheng You-Dou

2015-01-01

In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode (APD) is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed. (paper)

Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO

Science.gov (United States)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-04-01

The effects of hole injection in amorphous indium-gallium-zinc-oxide (a-IGZO) are analyzed by means of first-principles calculations. The injection of holes in the valence band tail states leads to their capture as a polaron, with high self-trapping energies (from 0.44 to 1.15 eV). Once formed, they mediate the formation of peroxides and remain localized close to the hole injection source due to the presence of a large diffusion energy barrier (of at least 0.6 eV). Their diffusion mechanism can be mediated by the presence of hydrogen. The capture of these holes is correlated with the low off-current observed for a-IGZO transistors, as well as with the difficulty to obtain a p-type conductivity. The results further support the formation of peroxides as being the root cause of Negative Bias Illumination Stress (NBIS). The strong self-trapping substantially reduces the injection of holes from the contact and limits the creation of peroxides from a direct hole injection. In the presence of light, the concentration of holes substantially rises and mediates the creation of peroxides, responsible for NBIS.

The self-protective nature of implicit identity and its relationship to weight bias and short-term weight loss.

Science.gov (United States)

Carels, Robert A; Hinman, Nova; Koball, Afton; Oehlhof, Marissa Wagner; Gumble, Amanda; Young, Kathleen M

2011-01-01

Research suggests that making overly positive self-evaluations is the norm rather than the exception. However, unlike other stigmatized groups, overweight individuals do not exhibit a positive in-group social identity and instead exhibit significant explicit, implicit, and internalized weight bias. Therefore, it is not known whether overweight/obese individuals will evidence self-enhancement on general traits (good, attractive), or on traits inconsistent with fat stereotypes (disciplined, active, healthy eater), on an assessment of implicit attitudes. Similarly, it is not known whether these ratings will be associated with preexisting levels of weight bias, gender, or short-term weight loss. At baseline, 53 overweight/obese adults (BMI > 27 kg/m(2), mean BMI = 37.3 kg/m(2), SD = 6.6 kg/m(2), 89% Caucasian, and 77% female) participating in a weight loss intervention completed measures of explicit and internalized weight bias as well as implicit weight bias and identity (self-other comparisons). Although participants evidenced significant anti-fat attitudes, they implicitly identified themselves as significantly thinner, better, more attractive, active, disciplined, and more likely to eat healthy than 'other' people. Compared to men, women were less likely to view themselves as thin and attractive relative to others. Greater implicit anti-fat bias and implicitly seeing the self as thin relative to others was associated with less short-term weight loss. Despite evidence for explicit, implicit, and internalized weight bias, participants generally evidenced a positive implicit self-identity, including areas consistent with negative fat stereotypes. Copyright © 2011 S. Karger AG, Basel.

Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Science.gov (United States)

Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

2017-07-01

Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

Science.gov (United States)

Tang, Lan-Feng; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Qian, Hui-Min; Zhou, Dong; Zhang, Rong; Zheng, You-Dou; Huang, Xiao-Ming

2015-08-01

The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed. Project supported by the State Key Program for Basic Research of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures

Directory of Open Access Journals (Sweden)

Yongqi Dong

2017-05-01

Full Text Available The effect of gate voltage polarity on the behavior of NdNiO3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (∼3% and pronounced lattice expansion (0.17% in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is provided for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors.

Asymmetrical transfer effects of cognitive bias modification: Modifying attention to threat influences interpretation of emotional ambiguity, but not vice versa.

Science.gov (United States)

Bowler, J O; Hoppitt, L; Illingworth, J; Dalgleish, T; Ononaiye, M; Perez-Olivas, G; Mackintosh, B

2017-03-01

It is well established that attention bias and interpretation bias each have a key role in the development and continuation of anxiety. How the biases may interact with one another in anxiety is, however, poorly understood. Using cognitive bias modification techniques, the present study examined whether training a more positive interpretation bias or attention bias resulted in transfer of effects to the untrained cognitive domain. Differences in anxiety reactivity to a real-world stressor were also assessed. Ninety-seven first year undergraduates who had self-reported anxiety were allocated to one of four groups: attention bias training (n = 24), interpretation bias training (n = 26), control task training (n = 25) and no training (n = 22). Training was computer-based and comprised eight sessions over four weeks. Baseline and follow-up measures of attention and interpretation bias, anxiety and depression were taken. A significant reduction in threat-related attention bias and an increase in positive interpretation bias occurred in the attention bias training group. The interpretation bias training group did not exhibit a significant change in attention bias, only interpretation bias. The effect of attention bias training on interpretation bias was significant as compared with the two control groups. There were no effects on self-report measures. The extent to which interpretive training can modify attentional processing remains unclear. Findings support the idea that attentional training might have broad cognitive consequences, impacting downstream on interpretive bias. However, they do not fully support a common mechanism hypothesis, as interpretive training did not impact on attentional bias. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

The high voltage system for the novel MPGD-based photon detectors of COMPASS RICH-1

CERN Document Server

Dalla Torre, S.; Birsa, R.; Bradamante, F.; Bressan, A.; Chatterjee, C.; Ciliberti, P.; Dasgupta, S.; Gobbo, B.; Gregori, M.; Hamar, G.; Levorato, S.; Martin, A.; Menon, G.; Tessarotto, F.; Zhao, Y.

2018-01-01

The architecture of the novel MPGD-based photon detectors of COMPASS RICH-1 consists in a large-size hybrid MPGD multilayer layout combining two layers of Thick-GEMs and a bulk resistive MICROMEGAS. Concerning biasing voltage, the Thick-GEMs are segmented in order to reduce the energy released in case of occasional discharges, while the MICROMEGAS anode is segmented in pads individually biased at positive voltage, while the micromesh is grounded. In total, there are ten different electrode types and more than 20000 electrodes supplied by more than 100 HV channels. Commercial power supply units are used. The original elements of the power supply system are the architecture of the voltage distribution net, the compensation, by voltage adjustment, of the effects of pressure and temperature variation affecting the detector gain and a sophisticated control software, which allows to protect the detectors against errors by the operator, to monitor and log voltages and current at 1 Hz rate and to automatically react ...

Thermally-induced voltage alteration for integrated circuit analysis

Energy Technology Data Exchange (ETDEWEB)

Cole, E.I. Jr.

2000-06-20

A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

Development of the self-learning machine for creating models of microprocessor of single-phase earth fault protection devices in networks with isolated neutral voltage above 1000 V

Science.gov (United States)

Utegulov, B. B.; Utegulov, A. B.; Meiramova, S.

2018-02-01

The paper proposes the development of a self-learning machine for creating models of microprocessor-based single-phase ground fault protection devices in networks with an isolated neutral voltage higher than 1000 V. Development of a self-learning machine for creating models of microprocessor-based single-phase earth fault protection devices in networks with an isolated neutral voltage higher than 1000 V. allows to effectively implement mathematical models of automatic change of protection settings. Single-phase earth fault protection devices.

Design of Low Voltage Low Power CMOS OP-AMPS with Rail-to-Rail Input/Output Swing

OpenAIRE

Gopalaiah, SV; Shivaprasad, AP; Panigrahi, Sukanta K

2004-01-01

A novel input and output biasing circuit to extend the input common mode (CM) voltage range and the output swing to rail-to-rail in a low voltage op-amp in standard CMOS technology is presented. The input biasing circuit uses a Switched Capacitor Based Attenuator (SCBA) approach to establish rail-to-rail common mode input voltage range. And the output biasing circuit uses an Output Driver (OD), with floating bias to give the rail-to-rail swing at output stage. Three different OD schemes in op...

The effect of gate voltage on the electrical transport properties in the contacts of C60 to carbon nanotube leads

Directory of Open Access Journals (Sweden)

AA Shokri

2012-06-01

Full Text Available  In this paper, we examined the effect of gate voltage, bias voltage, contact geometries and the different bond lengths on the electrical transport properties in a nanostructure consisting of C60 molecule attached to two semi-infinite leads made of single wall carbon nanotubes in the coherent regime. Our calculation was based on the Green’s function method within nearest-neighbour tight-binding approximation. After the calculation was of transmission, the electrical current was obtained by the Landauer-Buttiker formula. Next, the effect of the mentioned factors was investigated in the nanostructure. The application of the present results may be useful in designing devices based on molecular electronics in nanoscale.

Can Children with ADHD Be Motivated to Reduce Bias in Self-Reports of Competence?

Science.gov (United States)

Hoza, Betsy; Vaughn, Aaron; Waschbusch, Daniel A.; Murray-Close, Dianna; McCabe, George

2012-01-01

Objective: Our purpose in the current study was to examine whether children with attention-deficit/hyperactivity disorder (ADHD) and comparison children, if adequately motivated, are able to purposefully match their teachers' ratings of competence in multiple domains and whether any reductions in self-perceptual bias normalize self-views in…

Self-Awareness and Cultural Identity as an Effort to Reduce Bias in Medicine.

Science.gov (United States)

White, Augustus A; Logghe, Heather J; Goodenough, Dan A; Barnes, Linda L; Hallward, Anne; Allen, Irving M; Green, David W; Krupat, Edward; Llerena-Quinn, Roxana

2018-02-01

In response to persistently documented health disparities based on race and other demographic factors, medical schools have implemented "cultural competency" coursework. While many of these courses have focused on strategies for treating patients of different cultural backgrounds, very few have addressed the impact of the physician's own cultural background and offered methods to overcome his or her own unconscious biases. In hopes of training physicians to contextualize the impact of their own cultural background on their ability to provide optimal patient care, the authors created a 14-session course on culture, self-reflection, and medicine. After completing the course, students reported an increased awareness of their blind spots and that providing equitable care and treatment would require lifelong reflection and attention to these biases. In this article, the authors describe the formation and implementation of a novel medical school course on self-awareness and cultural identity designed to reduce unconscious bias in medicine. Finally, we discuss our observations and lessons learned after more than 10 years of experience teaching the course.

Effect of Substrate Bias on Friction Coefficient, Adhesion Strength and Hardness of TiN-COATED Tool Steel

Science.gov (United States)

Hamzah, Esah; Ali, Mubarak; Toff, Mohd Radzi Hj. Mohd

In the present study, TiN coatings have been deposited on D2 tool steel substrates by using cathodic arc physical vapor deposition technique. The objective of this research work is to determine the usefulness of TiN coatings in order to improve the micro-Vickers hardness and friction coefficient of TiN coating deposited on D2 tool steel, which is widely used in tooling applications. A Pin-on-Disc test was carried out to study the coefficient of friction versus sliding distance of TiN coating deposited at various substrate biases. The standard deviation parameter during tribo-test result showed that the coating deposited at substrate bias of -75 V was the most stable coating. A significant increase in micro-Vickers hardness was recorded, when substrate bias was reduced from -150 V to zero. Scratch tester was used to compare the critical loads for coatings deposited at different bias voltages and the adhesion achievable was demonstrated with relevance to the various modes, scratch macroscopic analysis, critical load, acoustic emission and penetration depth. A considerable improvement in TiN coatings was observed as a function of various substrate bias voltages.

Substrate bias effects on composition and coercivity of CoCrTa/Cr thin films on canasite and glass

Science.gov (United States)

Deng, Y.; Lambeth, D. N.; Sui, X.; Lee, L.-L.; Laughlin, D. E.

1993-05-01

CoCrTa/Cr thin films were prepared by rf diode sputtering onto canasite and glass substrates at various bias voltages from two targets of different compositions (Co82.8Cr14.6Ta2.6 and Co86Cr12Ta2). While Auger depth profile analysis indicates that there is some broadening at the CoCrTa-Cr interface, x-ray fluorescence spectroscopy reveals that changes in alloy composition due to the resputtering processes are even more prominent. For both targets, as the substrate bias increases the Co content in the films declines, and the magnetization decreases. The maximum film coercivity appears to correlate to the final film composition. By investigating the results from both targets, it is concluded that the coercivity reaches a maximum when the film composition is in the neighborhood of Co84Cr13Ta3. Thus, to optimize the coercivity different bias voltages are required for each target. Excessive substrate bias, however, leads to films with low magnetization and coercivity.

Bias-dependent oscillatory electron transport of monatomic sulfur chains

KAUST Repository

Yu, Jing-Xin; Cheng, Yan; Sanvito, Stefano; Chen, Xiang-Rong

2012-01-01

The bias-dependent oscillatory electron transport of monatomic sulfur chains sandwiched between gold electrodes is investigated with density functional theory and non-equilibrium Green's function method. At zero bias, in contrast to the typical odd-even oscillations observed in most metallic chains, we find that the conductance oscillates with a period of four atoms. However, as the bias voltage is increased the current displays a two-atom periodicity. This emerges gradually, first for the longer chains and then, at voltages larger than 0.7 V, for lengths. The oscillatory behaviors are analyzed by the density of states and the energy-dependent and bias-dependent transmission coefficients. © 2012 American Institute of Physics.

Bias-dependent oscillatory electron transport of monatomic sulfur chains

KAUST Repository

Yu, Jing-Xin

2012-01-01

The bias-dependent oscillatory electron transport of monatomic sulfur chains sandwiched between gold electrodes is investigated with density functional theory and non-equilibrium Green\\'s function method. At zero bias, in contrast to the typical odd-even oscillations observed in most metallic chains, we find that the conductance oscillates with a period of four atoms. However, as the bias voltage is increased the current displays a two-atom periodicity. This emerges gradually, first for the longer chains and then, at voltages larger than 0.7 V, for lengths. The oscillatory behaviors are analyzed by the density of states and the energy-dependent and bias-dependent transmission coefficients. © 2012 American Institute of Physics.

Modifications of plasma edge electric field and confinement properties by limiter biasing on the KT-5C tokamak

International Nuclear Information System (INIS)

Hui Gao; Kan Zhai; Yizhi Wen; Shude Wan; Guiding Wang; Changxun Yu

1995-01-01

Experiments using a biased multiblock limiter in the KT-5C tokamak show that positive biasing is more effective than negative biasing in modifying the edge electric field, suppressing fluctuations and improving plasma confinement. The biasing effect varies with the limiter area, the toroidal magnetic field and the biasing voltage. By positive biasing, the edge profiles of the plasma potential, the electron temperature and the density become steeper, resulting in a reduced edge particle flux, an increased global particle confinement time and lower fluctuation levels of the edge plasma. (author)

The restraint bias: how the illusion of self-restraint promotes impulsive behavior

NARCIS (Netherlands)

Nordgren, L.F.; van Harreveld, F.; van der Pligt, J.

2009-01-01

Four studies examined how impulse-control beliefs—beliefs regarding one's ability to regulate visceral impulses, such as hunger, drug craving, and sexual arousal—influence the self-control process. The findings provide evidence for a restraint bias: a tendency for people to overestimate their

Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

Directory of Open Access Journals (Sweden)

P. Pipinys

2010-01-01

Full Text Available Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K using for calculation the effective mass of 0.222 me. and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy are also explicable in the framework of the PhAT model.

Simulation experiment on total ionization dose effects of linear CCD

International Nuclear Information System (INIS)

Tang Benqi; Zhang Yong; Xiao Zhigang; Wang Zujun; Huang Shaoyan

2004-01-01

We carry out the ionization radiation experiment of linear CCDs operated in unbiased, biased, biased and driven mode respectively by Co-60 γ source with our self-designed test system, and offline test the Dark signal and Saturation voltage and SNR varied with total dose for TCD132D, and get some valuable results. On the basis of above work, we set forth a primary experiment approaches to simulate the total dose radiation effects of charge coupled devices. (authors)

Change in bias in self-reported body mass index in Australia between 1995 and 2008 and the evaluation of correction equations.

Science.gov (United States)

Hayes, Alison J; Clarke, Philip M; Lung, Tom Wc

2011-09-25

Many studies have documented the bias in body mass index (BMI) determined from self-reported data on height and weight, but few have examined the change in bias over time. Using data from large, nationally-representative population health surveys, we examined change in bias in height and weight reporting among Australian adults between 1995 and 2008. Our study dataset included 9,635 men and women in 1995 and 9,141 in 2007-2008. We investigated the determinants of the bias and derived correction equations using 2007-2008 data, which can be applied when only self-reported anthropometric data are available. In 1995, self-reported BMI (derived from height and weight) was 1.2 units (men) and 1.4 units (women) lower than measured BMI. In 2007-2008, there was still underreporting, but the amount had declined to 0.6 units (men) and 0.7 units (women) below measured BMI. The major determinants of reporting error in 2007-2008 were age, sex, measured BMI, and education of the respondent. Correction equations for height and weight derived from 2007-2008 data and applied to self-reported data were able to adjust for the bias and were accurate across all age and sex strata. The diminishing reporting bias in BMI in Australia means that correction equations derived from 2007-2008 data may not be transferable to earlier self-reported data. Second, predictions of future overweight and obesity in Australia based on trends in self-reported information are likely to be inaccurate, as the change in reporting bias will affect the apparent increase in self-reported obesity prevalence.

Subclinical delusional ideation and a self-reference bias in everyday reasoning.

Science.gov (United States)

Galbraith, Niall; Manktelow, Ken; Morris, Neil

2008-02-01

Previous studies (e.g. Moller & Husby, 2000; Blackwood et al., 2004) have revealed that delusional thinking is accompanied by an exaggerated focus upon the self and upon stimuli that are perceived to be related to the self. The objective was to examine whether those high in subclinical delusional ideation exhibit a heightened tendency for self-reference. Using a mixed design, healthy individuals, classified into high- and low-scoring groups on the Peters et al. Delusions Inventory (Peters, Day, & Garety, 1996), were compared on everyday reasoning tasks across three experiments. High-PDI scorers, in contrast to the low-PDI group, rated self-referent objections to everyday arguments as stronger than other-referent objections and formulated more self-referent assertion-based objections to everyday arguments. The findings support the notion that subclinical delusional ideation is linked to a self-reference bias, which is evident in the sort of everyday thinking that people engage in when forming or evaluating their beliefs and which may contribute to delusion formation.

A self-learning algorithm for biased molecular dynamics

Science.gov (United States)

Tribello, Gareth A.; Ceriotti, Michele; Parrinello, Michele

2010-01-01

A new self-learning algorithm for accelerated dynamics, reconnaissance metadynamics, is proposed that is able to work with a very large number of collective coordinates. Acceleration of the dynamics is achieved by constructing a bias potential in terms of a patchwork of one-dimensional, locally valid collective coordinates. These collective coordinates are obtained from trajectory analyses so that they adapt to any new features encountered during the simulation. We show how this methodology can be used to enhance sampling in real chemical systems citing examples both from the physics of clusters and from the biological sciences. PMID:20876135

Self and team prioritisation effects in perceptual matching: Evidence for a shared representation.

Science.gov (United States)

Enock, Florence; Sui, Jie; Hewstone, Miles; Humphreys, Glyn W

2018-01-01

Previous research has demonstrated that in-group favouritism occurs not only in higher-level judgments such as reward allocation, but also in low-level perceptual and attentional tasks. Recently, Moradi, Sui, Hewstone, and Humphreys (2015) found a novel effect of in-group bias on a simple perceptual matching task in which football fans responded more efficiently to stimuli newly associated with their own football team than stimuli associated with rival or neutral teams. This result is consistent with a robust self-bias effect in which individuals show a large performance advantage in responding to stimuli associated with the self over stimuli associated with a close friend or a stranger (Sui, He, & Humphreys, 2012). The present research utilised a perceptual matching paradigm to investigate the relations between self and in-group prioritisation amongst a sample of college rowers. Across two experiments, we demonstrated a reliable performance advantage for self and team stimuli. We also found a relationship between the self and team advantage in RT, and demonstrated an overlap in the perception of self- and team-associated shapes that was stronger in participants who reported a greater sense of group identity with their team. Further, we found no relation between the team bias and positive valence implicitly associated with the team, showing that the team bias effects are unlikely to be driven by emotional significance. The results are consistent with an overlap between self and in-group representation, which may provide evidence for a common process driving both self and in-group perceptual advantage effects. Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.

Liquid–Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing

KAUST Repository

Zhang, Yu

2017-10-17

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid–liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the “sensing channel” can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

Liquid-Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing.

Science.gov (United States)

Zhang, Yu; Li, Jun; Li, Rui; Sbircea, Dan-Tiberiu; Giovannitti, Alexander; Xu, Junling; Xu, Huihua; Zhou, Guodong; Bian, Liming; McCulloch, Iain; Zhao, Ni

2017-11-08

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid-liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the "sensing channel" can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

Piezo Voltage Controlled Planar Hall Effect Devices.

Science.gov (United States)

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-06-22

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Ultra-Low Voltage Class AB Switched Current Memory Cell

DEFF Research Database (Denmark)

Igor, Mucha

1996-01-01

This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

Effect of applied bias voltage on corrosion-resistance for TiC{sub 1-x}N{sub x} and Ti{sub 1-x}Nb{sub x}C{sub 1-y}N{sub y} coatings

Energy Technology Data Exchange (ETDEWEB)

Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Amaya, C. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Laboratorio de Recubrimientos Duros DT-ASTIN SENA, Cali (Colombia); Yate, L. [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Aperador, W.; Zambrano, G.; Gomez, M.E. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Alvarado-Rivera, J.; Munoz-Saldana, J. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro (Mexico); Prieto, P. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Centro de Excelencia en Nuevos Materiales, Calle 13 100-00 Edificio 320, espacio 1026, Cali (Colombia)

2010-02-15

Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and 'impurities' of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

International Nuclear Information System (INIS)

Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Park, Chan Eon; Choi, Woon-Seop

2010-01-01

Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

Instabilities in RF-power amplifiers caused by a self-oscillation in the transistor bias network

DEFF Research Database (Denmark)

Vidkjær, Jens

1976-01-01

This paper describes a self-oscillation in the bias network of an amplifier which is commonly used for the output stage in mobile transmitters. It is demonstrated how some often observed spurious oscillations may be related to the self-oscillation and a method for stabilizing the amplifier...

Is self-esteem predictor of in-group bias and out-group discrimination?

OpenAIRE

Jelić, Margareta

2009-01-01

Previous research has found that, in cases of intergroup conflict, people are likely to evaluate their groups more positively than the groups they do not belong to, but are also more ready to derogate the out-group. Two important factors need to be taken into consideration to explain these processes: self-esteem and group status. We explored the role of personal and social self-esteem in predicting in-group bias and out-group discrimination on two conflicted ethnic groups living in Vukovar. C...

Item bias in self-reported functional ability among 75-year-old men and women in three Nordic localities

DEFF Research Database (Denmark)

Avlund, K; Era, P; Davidsen, M

1996-01-01

to geographical locality and gender. Information about self-reported functional ability was gathered from surveys on 75-year-old men and women in Glostrup (Denmark), Göteborg (Sweden) and Jyväskylä (Finland). The data were collected by structured home interviews about mobility and Physical activities of daily......The purpose of this article is to analyse item bias in a measure of self-reported functional ability among 75-year-old people in three Nordic localities. The present item bias analysis examines whether the construction of a functional ability index from several variables results in bias in relation...... living (PADL) in relation to tiredness, reduced speed and dependency and combined into three tiredness-scales, three reduced speed-scales and two dependency-scales. The analysis revealed item bias regarding geographical locality in seven out of eight of the functional ability scales, but nearly no bias...

APPLIED OPTICS. Voltage-tunable circular photogalvanic effect in silicon nanowires.

Science.gov (United States)

Dhara, Sajal; Mele, Eugene J; Agarwal, Ritesh

2015-08-14

Electronic bands in crystals can support nontrivial topological textures arising from spin-orbit interactions, but purely orbital mechanisms can realize closely related dynamics without breaking spin degeneracies, opening up applications in materials containing only light elements. One such application is the circular photogalvanic effect (CPGE), which is the generation of photocurrents whose magnitude and polarity depend on the chirality of optical excitation. We show that the CPGE can arise from interband transitions at the metal contacts to silicon nanowires, where inversion symmetry is locally broken by an electric field. Bias voltage that modulates this field further controls the sign and magnitude of the CPGE. The generation of chirality-dependent photocurrents in silicon with a purely orbital-based mechanism will enable new functionalities in silicon that can be integrated with conventional electronics. Copyright © 2015, American Association for the Advancement of Science.

Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan; Zhang, Zhong-Da; Xu, Jian-Long; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123 (China)

2016-07-11

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

Self-biased broadband magnet-free linear isolator based on one-way space-time coherency

Science.gov (United States)

Taravati, Sajjad

2017-12-01

This paper introduces a self-biased broadband magnet-free and linear isolator based on one-way space-time coherency. The incident wave and the space-time-modulated medium share the same temporal frequency and are hence temporally coherent. However, thanks to the unidirectionally of the space-time modulation, the space-time-modulated medium and the incident wave are spatially coherent only in the forward direction and not in the opposite direction. As a consequence, the energy of the medium strongly couples to the propagating wave in the forward direction, while it conflicts with the propagating wave in the opposite direction, yielding strong isolation. We first derive a closed-form solution for the wave scattering from a spatiotemporally coherent medium and then show that a perfectly coherent space-time-modulated medium provides a moderate isolation level which is also subject to one-way transmission gain. To overcome this issue, we next investigate the effect of space-coherency imperfection between the medium and the wave, while they are still perfectly temporally coherent. Leveraging the spatial-coherency imperfection, the medium exhibits a quasiarbitrary and strong nonreciprocal transmission. Finally, we present the experimental demonstration of the self-biased version of the proposed broadband isolator, exhibiting more than 122 % fractional operation bandwidth.

Hard coatings on magnesium alloys by sputter deposition using a pulsed d.c. bias voltage

Energy Technology Data Exchange (ETDEWEB)

Reiners, G. [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Griepentrog, M. [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany)

1995-12-01

An increasing use of magnesium-based light-metal alloys for various industrial applications was predicted in different technological studies. Companies in different branches have developed machine parts made of magnesium alloys (e.g. cars, car engines, sewing and knitting machines). Hence, this work was started to evaluate the ability of hard coatings obtained by physical vapour deposition (PVD) in combination with coatings obtained by electrochemical deposition to protect magnesium alloys against wear and corrosion. TiN hard coatings were deposited onto magnesium alloys by unbalanced magnetron sputter deposition. A bipolar pulsed d.c. bias voltage was used to limit substrate temperatures to 180 C during deposition without considerable loss of microhardness and adhesion. Adhesion, hardness and load-carrying capacity of TiN coatings deposited directly onto magnesium alloys are compared with the corresponding values of TiN coatings deposited onto substrates which had been coated electroless with an Ni-P alloy interlayer prior to the PVD. (orig.)

Low voltage excess noise and shot noise in YBCO bicrystal junctions

DEFF Research Database (Denmark)

Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.

2002-01-01

The spectral density of background noise emitted by symmetric bicrystal YBaCuO Josephson junctions on sapphire substrates have been measured by a low noise cooled HEMT amplifier for bias voltages up to V approximate to 50 mV. At relatively low voltages V noise rise has been...... registered. At large bias voltages V > 30 mV a clear dependence of noise power. exactly coinciding to the asymptote of the Schottky shot noise function, has been observed for the first time. Experimental results are discussed in terms of multiple Andreev reflections which may take place in d...

Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics

Science.gov (United States)

Been, J. F.

1973-01-01

The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.

High sensitivity, fast speed and self-powered ultraviolet photodetectors based on ZnO micro/nanowire networks

Directory of Open Access Journals (Sweden)

Zhiming Bai

2014-02-01

Full Text Available Ultraviolet (UV photodetectors (PDs based on ZnO micro/nanowire (MNW networks with Pt contacts have been fabricated on glass substrates. The PDs exhibited a high photosensitivity (5×103 for 365 nm UV light with a fast recovery time (0.2 s at a reverse bias voltage of 2 V. The light induced modulation of Schottky barrier and MNW–MNW junction barrier was employed to account for the results. It was also observed that the PD had a high on–off ratio of 800 without external bias. The photovoltaic effect was proposed to explain the self-powered phenomenon.

On the stability of silicon field effect capacitors with phosphate buffered saline electrolytic gate and self assembled monolayer gate insulator

International Nuclear Information System (INIS)

Hemed, Nofar Mintz; Inberg, Alexandra; Shacham-Diamand, Yosi

2013-01-01

We herein report on the stability of Electrolyte/Insulator/Semiconductor (EIS) devices with Self-Assembled Monolayer (SAM) gate insulator layers, i.e. Electrolyte/SAM/Semiconductor (ESS) devices. ESS devices can be functionalized creating highly specific sensors that can be integrated on standard silicon platform. However, biosensors by their nature are in contact with biological solutions that contain ions and molecules that may affect the device characteristics and cause electrical instability. In this paper we present a list of potential hazards to ESS devices and a study of the device stability under common testing conditions analyzing possible causes for the instabilities. ESS capacitors under open circuit conditions (i.e. open circuit bias of ∼0.6 V vs. Ag/AgCl reference electrode) were periodically characterized. We measured the complex impedance of the capacitors versus bias and extracted the effective capacitance vs. voltage (C–V) curves using two methods. We observed a parallel shift of the C–V curves toward negative bias; showing an effective accumulation of positive charge. The quantitative analysis of the drift vs. time was found to depend on the effective capacitance evaluation method. This effect is discussed and a best-known method is proposed. The devices surface composition was tested before and after the stress experiment by X-ray Photoelectron Spectroscopy (XPS) and sodium accumulation was observed. To further explore the flat-band voltage drift effect and to challenge the assumption that alkali ions are involved in the drift we conceived a novel alkali-free phosphate buffer saline (AF-PBS) where the sodium and potassium ions are replaced by ammonium ion and tested the capacitor under similar conditions to standard PBS. We found that the drift of the AF-PBS solution was much less at the first hour but was similar to that of the conventional PBS for longer stress times; hence, AF-PBS does not solve the long-term instability problem

The joint effect of bias awareness and self-reported prejudice on intergroup anxiety and intentions for intergroup contact.

Science.gov (United States)

Perry, Sylvia P; Dovidio, John F; Murphy, Mary C; van Ryn, Michelle

2015-01-01

Two correlational studies investigated the joint effect of bias awareness-a new individual difference measure that assesses Whites' awareness and concern about their propensity to be biased-and prejudice on Whites' intergroup anxiety and intended intergroup contact. Using a community sample (Study 1), we found the predicted Bias Awareness × Prejudice interaction. Prejudice was more strongly related to interracial anxiety among those high (vs. low) in bias awareness. Study 2 investigated potential behavioral consequences in an important real world context: medical students' intentions for working primarily with minority patients. Study 2 replicated the Bias Awareness × Prejudice interaction and further demonstrated that interracial anxiety mediated medical students' intentions to work with minority populations. (PsycINFO Database Record (c) 2015 APA, all rights reserved).

Bunch motion in the presence of the self-induced voltage due to a reactive impedance; 1, RF off

CERN Document Server

Shaposhnikova, Elena

1995-01-01

Analytic self-consistent solutions have been found for the nonlinear Vlasov equation describing different types of behaviour with time of an intense bunch under the influence of voltage induced due to a reactive part of broad band impedance. The problem is solved for the particular type of the initial distribution function in longitudinal phase space which is elliptic and corresponds to parabolic line density. The first part of the paper is devoted to the consideration of the effects in the machine with RF off. In this case induced voltage is changing with time and, as in the case with RF on, can have a significant effect on bunch motion. Numerical estimations for the SPS show that this effect can be important for manipulations with beam at 26GeV. Measurements of the change in the rate of debunching with intensity can also be used to estimate the value of the impedance. The same method is applied in the second part of the paper to analyse time dependent effects of potential well distortion when RF is on.

Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

Science.gov (United States)

Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

2012-03-01

High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

Information processing biases concurrently and prospectively predict depressive symptoms in adolescents: Evidence from a self-referent encoding task.

Science.gov (United States)

Connolly, Samantha L; Abramson, Lyn Y; Alloy, Lauren B

2016-01-01

Negative information processing biases have been hypothesised to serve as precursors for the development of depression. The current study examined negative self-referent information processing and depressive symptoms in a community sample of adolescents (N = 291, Mage at baseline = 12.34 ± 0.61, 53% female, 47.4% African-American, 49.5% Caucasian and 3.1% Biracial). Participants completed a computerised self-referent encoding task (SRET) and a measure of depressive symptoms at baseline and completed an additional measure of depressive symptoms nine months later. Several negative information processing biases on the SRET were associated with concurrent depressive symptoms and predicted increases in depressive symptoms at follow-up. Findings partially support the hypothesis that negative information processing biases are associated with depressive symptoms in a nonclinical sample of adolescents, and provide preliminary evidence that these biases prospectively predict increases in depressive symptoms.

Effect of dc negative-bias and silicon introduction on performance of Si-B-N composite film by RF-PECD technique

International Nuclear Information System (INIS)

Meng Hua; Yu Xiang; Yu Junfeng; Wang Chengbiao

2005-01-01

Under action of different dc negative-bias voltages on samples incorporating with silicon, a series of Si-B-N composite films were synthesized on steel 1045 using RF-PECVD technique (radio-frequency plasma enhanced chemical vapor deposition), and the surface analysis of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and etc. were followed. The experimental results showed: Si-B-N composite films had an obvious mixture phase of c-BN and h-BN crystal at a certain dc negative bias, and the film's mechanical performances including micro-hardness and adhesion were improved. Moreover, bias effect on deposition performance of Si-B-N composite film has been systematically investigated, and silicon introduction was found to be necessary for the growth of Si-B-N film and the improvement of adhesion

New method for determining avalanche breakdown voltage of silicon photomultipliers

International Nuclear Information System (INIS)

Chirikov-Zorin, I.

2017-01-01

The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDE rel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDE rel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts. [ru

An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

Science.gov (United States)

Li, Kexin; Rakheja, Shaloo

2018-05-01

We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

Energy Technology Data Exchange (ETDEWEB)

Chun, Minkyu; Um, Jae Gwang; Park, Min Sang; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 02447 (Korea, Republic of)

2016-07-15

We report the abnormal behavior of the threshold voltage (V{sub TH}) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V{sub TG}), while bottom gate bias (V{sub BG}) is less effect than V{sub TG}. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO{sub 2}/a-IGZO and also the existence of large amount of In{sup +} under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH{sup −} at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V{sub TG} both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

Exposure reduces negative bias in self-rated performance in public speaking fearful participants.

Science.gov (United States)

Cheng, Joyce; Niles, Andrea N; Craske, Michelle G

2017-03-01

Individuals with public speaking anxiety (PSA) under-rate their performance compared to objective observers. The present study examined whether exposure reduces the discrepancy between self and observer performance ratings and improved observer-rated performance in individuals with PSA. PSA participants gave a speech in front of a small audience and rated their performance using a questionnaire before and after completing repeated exposures to public speaking. Non-anxious control participants gave a speech and completed the questionnaire one time only. Objective observers watched videos of the speeches and rated performance using the same questionnaire. PSA participants underrated their performance to a greater degree than did controls prior to exposure, but also performed significantly more poorly than did controls when rated objectively. Bias significantly decreased and objective-rated performance significantly increased following completion of exposure in PSA participants, and on one performance measure, anxious participants no longer showed a greater discrepancy between self and observer performance ratings compared to controls. The study employed non-clinical student sample, but the results should be replicated in clinical anxiety samples. These findings indicate that exposure alone significantly reduces negative performance bias among PSA individuals, but additional exposure or additional interventions may be necessary to fully correct bias and performance deficits. Copyright © 2016 Elsevier Ltd. All rights reserved.

Investigation of voltage swell mitigation using STATCOM

International Nuclear Information System (INIS)

Razak, N A Abdul; Jaafar, S; Hussain, I S

2013-01-01

STATCOM is one of the best applications of a self commutated FACTS device to control power quality problems in the distribution system. This project proposed a STATCOM model with voltage control mechanism. DQ transformation was implemented in the controller system to achieve better estimation. Then, the model was used to investigate and analyse voltage swell problem in distribution system. The simulation results show that voltage swell could contaminate distribution network with unwanted harmonic frequencies. Negative sequence frequencies give harmful effects to the network. System connected with proposed STATCOM model illustrates that it could mitigate this problems efficiently.

Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide

International Nuclear Information System (INIS)

Bory, Benjamin F.; Wang, Jingxin; Janssen, René A. J.; Meskers, Stefan C. J.; Gomes, Henrique L.; De Leeuw, Dago M.

2014-01-01

Electroforming of indium-tin-oxide/alkali halide/poly(spirofluorene)/Ba/Al diodes has been investigated by bias dependent reflectivity measurements. The threshold voltages for electrocoloration and electroforming are independent of layer thickness and correlate with the bandgap of the alkali halide. We argue that the origin is voltage induced defect formation. Frenkel defect pairs are formed by electron–hole recombination in the alkali halide. This self-accelerating process mitigates injection barriers. The dynamic junction formation is compared to that of a light emitting electrochemical cell. A critical defect density for electroforming is 10 25 /m 3 . The electroformed alkali halide layer can be considered as a highly doped semiconductor with metallic transport characteristics

Hot Cathode Biasing Experiment in Compact Helical System

Energy Technology Data Exchange (ETDEWEB)

Takahashi, H.; Utoh, H.; Kitajima, S.; Isobe, M.; Suzuki, C.; Takeuchi, M.; Ikeda, R.; Tanaka, Y.; Yokoyama, M.; Toi, K.; Okamura, S.; Sasao, M.

2005-07-01

One of the H mode characteristics is a sudden formation of a radial electric field at LH transition. To date, H mode was widely observed in various tokamaks [1-3] and stellarator devices [4, 5], and the importance of the radial electric field has been shown in both experiments and in theory. However, it is difficult to investigate the behaviour of a radial electric field in detail at LH transition induced by NBI heating because the radial electric field is self-organised and changes suddenly. Electrode bias experiments are methods for active control of the radial electric field. The electrode bias experiment has the advantage of the ability to control the radial electric field externally by controlling the electrode voltage and/or the electrode current and to estimate the driving force from the electrode current. The neoclassical theory indicates the criterion of LH transition from the viewpoint of the ion viscosity. In this theory, the ion viscosity has local maxima against the rotation velocity [6-8]. When the driving force in the poloidal direction exceeds a critical value, the poloidal rotation velocity increases rapidly and the plasma undergoes a transition to the H mode. This means that the LH transition mechanism is a bifurcation phenomenon due to the existence of local maxima in the ion viscosity. Here, we carried out the electrode biasing experiment in TU-Heliac and CHS to investigate the effect of ripple structure on ion viscosity and to clarify the role of ion viscosity in triggering the transition from the degraded state to enhanced confinement. (Author)

Mind-Body Practices and the Self: Yoga and Meditation Do Not Quiet the Ego but Instead Boost Self-Enhancement.

Science.gov (United States)

Gebauer, Jochen E; Nehrlich, Andreas D; Stahlberg, Dagmar; Sedikides, Constantine; Hackenschmidt, Anke; Schick, Doreen; Stegmaier, Clara A; Windfelder, Cara C; Bruk, Anna; Mander, Johannes

2018-06-01

Mind-body practices enjoy immense public and scientific interest. Yoga and meditation are highly popular. Purportedly, they foster well-being by curtailing self-enhancement bias. However, this "ego-quieting" effect contradicts an apparent psychological universal, the self-centrality principle. According to this principle, practicing any skill renders that skill self-central, and self-centrality breeds self-enhancement bias. We examined those opposing predictions in the first tests of mind-body practices' self-enhancement effects. In Experiment 1, we followed 93 yoga students over 15 weeks, assessing self-centrality and self-enhancement bias after yoga practice (yoga condition, n = 246) and without practice (control condition, n = 231). In Experiment 2, we followed 162 meditators over 4 weeks (meditation condition: n = 246; control condition: n = 245). Self-enhancement bias was higher in the yoga (Experiment 1) and meditation (Experiment 2) conditions, and those effects were mediated by greater self-centrality. Additionally, greater self-enhancement bias mediated mind-body practices' well-being benefits. Evidently, neither yoga nor meditation fully quiet the ego; to the contrary, they boost self-enhancement.

The effects of perspective-taking on prejudice: the moderating role of self-evaluation.

Science.gov (United States)

Galinsky, Adam D; Ku, Gillian

2004-05-01

Perspective-taking, by means of creating an overlap between self and other cognitive representations, has been found to effectively decrease stereotyping and ingroup favoritism. In the present investigation, the authors examined the potential moderating role of self-esteem on the effects of perspective-taking on prejudice. In two experiments, it was found that perspective-takers, but not control participants, with temporarily or chronically high self-esteem evaluated an outgroup more positively than perspective-takers with low self-esteem. This finding suggests an irony of perspective-taking: it builds off egocentric biases to improve outgroup evaluations. The discussion focuses on how debiasing intergroup thought is often best accomplished by working through the very processes that produced the bias in the first place.

Observations of sensor bias dependent cluster centroid shifts in a prototype sensor for the LHCb Vertex Locator detector

CERN Document Server

Papadelis, Aras

2006-01-01

We present results from a recent beam test of a prototype sensor for the LHCb Vertex Locator detector, read out with the Beetle 1.3 front-end chip. We have studied the effect of the sensor bias voltage on the reconstructed cluster positions in a sensor placed in a 120GeV pion beam at a 10° incidence angle. We find an unexplained sysematic shift in the reconstructed cluster centroid when increasing the bias voltage on an already overdepleted sensor. The shift is independent of strip pitch and sensor thickness.

Friends' knowledge of youth internalizing and externalizing adjustment: accuracy, bias, and the influences of gender, grade, positive friendship quality, and self-disclosure.

Science.gov (United States)

Swenson, Lance P; Rose, Amanda J

2009-08-01

Some evidence suggests that close friends may be knowledgeable of youth's psychological adjustment. However, friends are understudied as reporters of adjustment. The current study examines associations between self- and friend-reports of internalizing and externalizing adjustment in a community sample of fifth-, eighth-, and eleventh-grade youth. The study extends prior work by considering the degree to which friends' reports of youth adjustment are accurate (i.e., predicted by youths' actual adjustment) versus biased (i.e., predicted by the friend reporters' own adjustment). Findings indicated stronger bias effects than accuracy effects, but the accuracy effects were significant for both internalizing and externalizing adjustment. Additionally, friends who perceived their relationships as high in positive quality, friends in relationships high in disclosure, and girls perceived youths' internalizing symptoms most accurately. Knowledge of externalizing adjustment was not influenced by gender, grade, relationship quality, or self-disclosure. Findings suggest that friends could play an important role in prevention efforts.

Design and Implementation of a High-Voltage Generator with Output Voltage Control for Vehicle ER Shock-Absorber Applications

Directory of Open Access Journals (Sweden)

Chih-Lung Shen

2013-01-01

Full Text Available A self-oscillating high-voltage generator is proposed to supply voltage for a suspension system in order to control the damping force of an electrorheological (ER fluid shock absorber. By controlling the output voltage level of the generator, the damping force in the ER fluid shock absorber can be adjusted immediately. The shock absorber is part of the suspension system. The high-voltage generator drives a power transistor based on self-excited oscillation, which converts dc to ac. A high-frequency transformer with high turns ratio is used to increase the voltage. In addition, the system uses the car battery as dc power supply. By regulating the duty cycle of the main switch in the buck converter, the output voltage of the buck converter can be linearly adjusted so as to obtain a specific high voltage for ER. The driving system is self-excited; that is, no additional external driving circuit is required. Thus, it reduces cost and simplifies system structure. A prototype version of the actual product is studied to measure and evaluate the key waveforms. The feasibility of the proposed system is verified based on experimental results.

Enhanced Emission by Accumulated Charges at Organic/Metal Interfaces Generated during the Reverse Bias of Organic Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Soichiro Nozoe

2017-10-01

Full Text Available A high frequency rectangular alternating voltage was applied to organic light emitting diodes (OLEDs with the structure ITO/TPD/Alq3/Al and ITO/CoPc/Alq3/Al, where ITO is indium-tin-oxide, TPD is 4,4′-bis[N-phenyl-N-(m-tolylamino]biphenyl, CoPc is cobalt phthalocyanine, and Alq3 is Tris(8-quinolinolatoaluminum, and the effect on emission of the reverse bias was examined. The results reveal that the emission intensity under an alternating reverse-forward bias is greater than that under an alternating zero-forward bias. The difference in the emission intensity (∆I increased both for decreasing frequency and increasing voltage level of the reverse bias. In particular, the change in emission intensity was proportional to the voltage level of the reverse bias given the same frequency. To understand ΔI, this paper proposes a model in which an OLED works as a capacitor under reverse bias, where positive and negative charges accumulate on the metal/organic interfaces. In this model, the emission enhancement that occurs during the alternating reverse-forward bias is rationalized as a result of the charge accumulation at the organic/metal interfaces during the reverse bias, which possibly modulates the vacuum level shifts at the organic/metal interfaces to reduce both the hole injection barrier at the organic/ITO interface and the electron injection barrier at the organic/Al interface under forward bias.

Effects of interpretation training on hostile attribution bias and reactivity to interpersonal insult.

Science.gov (United States)

Hawkins, Kirsten A; Cougle, Jesse R

2013-09-01

Research suggests that individuals high in anger have a bias for attributing hostile intentions to ambiguous situations. The current study tested whether this interpretation bias can be altered to influence anger reactivity to an interpersonal insult using a single-session cognitive bias modification program. One hundred thirty-five undergraduate students were randomized to receive positive training, negative training, or a control condition. Anger reactivity to insult was then assessed. Positive training led to significantly greater increases in positive interpretation bias relative to the negative group, though these increases were only marginally greater than the control group. Negative training led to increased negative interpretation bias relative to other groups. During the insult, participants in the positive condition reported less anger than those in the control condition. Observers rated participants in the positive condition as less irritated than those in the negative condition and more amused than the other two conditions. Though mediation of effects via bias modification was not demonstrated, among the positive condition posttraining interpretation bias was correlated with self-reported anger, suggesting that positive training reduced anger reactivity by influencing interpretation biases. Findings suggest that positive interpretation training may be a promising treatment for reducing anger. However, the current study was conducted with a non-treatment-seeking student sample; further research with a treatment-seeking sample with problematic anger is necessary. Copyright © 2013. Published by Elsevier Ltd.

Carrier accumulation and depletion in point-contact capacitance-voltage measurements

Science.gov (United States)

Naitou, Yuichi

2017-11-01

Scanning capacitance microscopy (SCM) is a variation of atomic force microscopy in which a conductive probe tip detects the bias modulated capacitance for the purpose of measuring the nanoscale semiconductor carrier concentration. SCM can be regarded as a point-contact capacitance-voltage system, and its capacitance-voltage properties are different from those of a conventional parallel-plate capacitor. In this study, the charge accumulation and depletion behavior of a semiconductor sample were closely investigated by SCM. By analyzing the tip-sample approach curve, the effective probe tip area and charge depletion depth could be quantitatively determined.

Weight bias internalization in treatment-seeking overweight adults: Psychometric validation and associations with self-esteem, body image, and mood symptoms.

Science.gov (United States)

Durso, Laura E; Latner, Janet D; Ciao, Anna C

2016-04-01

Internalized weight bias has been previously associated with impairments in eating behaviors, body image, and psychological functioning. The present study explored the psychological correlates and psychometric properties of the Weight Bias Internalization Scale (WBIS) among overweight adults enrolled in a behavioral weight loss program. Questionnaires assessing internalized weight bias, anti-fat attitudes, self-esteem, body image concern, and mood symptoms were administered to 90 obese or overweight men and women between the ages of 21 and 73. Reliability statistics suggested revisions to the WBIS. The resulting 9-item scale was shown to be positively associated with body image concern, depressive symptoms, and stress, and negatively associated with self-esteem. Multiple linear regression models demonstrated that WBIS scores were significant and independent predictors of body image concern, self-esteem, and depressive symptoms. These results support the use of the revised 9-item WBIS in treatment-seeking samples as a reliable and valid measure of internalized weight bias. Copyright © 2016. Published by Elsevier Ltd.

The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs

International Nuclear Information System (INIS)

Huang Xiao-Ming; Zhu Hong-Bo; Wang Yong-Jin; Wu Chen-Fei; Lu Hai; Ren Fang-Fang

2015-01-01

The effect of oxygen partial pressure (P_O_2) during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated. As P_O_2 increases from 10% to 30%, it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies (O_V) within the a-IGZO layer is suppressed by increasing P_O_2. Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing P_O_2. Therefore, the improved interface quality with increasing P_O_2 during the channel layer deposition can be attributed to the reduction of interface O_V-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs. (paper)

Measuring the phase difference in network and residual voltages under the GTsN-195M pump self-starting

International Nuclear Information System (INIS)

Druba, V.V.; Druba, T.A.; Reznik, V.R.

1989-01-01

Determination of time dependence of phase difference of residual voltage on motor windings of the main circulation pumps (MCP) and voltage of power supply section under MCP self-starting under conditions of short-time breaks in electric power supply is one of the main problems to which reliability and safety of NPP operation is related. A method to measure this dependence in real conditions in case of MCP free run-out and run-out in generating mode is suggested. The method considered is used for tests of the Kalinin NPP-2 MCP-195M self-starting. Analysis of run-out curves in the case of a break in MCP power supply for 1.8 s shows that the most favourable conditions for MCP self-starting are 0.63±0.03 s after de-energizing. 2 refs.; 3 figs.; 1 tab

Ultrahigh surface area meso/microporous carbon formed with self-template for high-voltage aqueous supercapacitors

Science.gov (United States)

Yang, Jie; Hu, Jiangtao; Zhu, Min; Zhao, Yan; Chen, Haibiao; Pan, Feng

2017-10-01

A new hierarchically porous carbon has been synthesized with self-template of silica phase from a commercial silicone resin by pyrolysis and subsequent NaOH activation. The obtained carbon materials achieve an ultrahigh specific surface area (2896 m2 g-1) with abundant mesopores. The C800 sample demonstrates excellent performance in supercapacitors, with a high capacitance of 322 F g-1 at 0.5 A g-1 and outstanding rate capability (182 F g-1 at 100 A g-1) in a three-electrode system using 6.0 mol L-1 KOH electrolyte. The energy density is improved by widening the voltage window using 1.0 mol L-1 alkali metal nitrate solutions (LiNO3, NaNO3, KNO3) in which the strong solvation of alkali metal cations and nitrate anions effectively reduce the activity of water. In a symmetric supercapacitor, the maximum operating voltage is essentially restricted by the potential of positive electrode and the total capacitance is dominated by the capacitance of the anion at the positive electrode. The symmetric supercapacitors based on C800 deliver a high energy density of 22.4 Wh kg-1 at a power density of 0.23 kW kg-1 in 1.0 mol L-1 LiNO3 with a voltage of 1.8 V and long-term stability with a retention of 89.87% after 10000 cycles.

Quantifying transition voltage spectroscopy of molecular junctions: Ab initio calculations

DEFF Research Database (Denmark)

Chen, Jingzhe; Markussen, Troels; Thygesen, Kristian Sommer

2010-01-01

Transition voltage spectroscopy (TVS) has recently been introduced as a spectroscopic tool for molecular junctions where it offers the possibility to probe molecular level energies at relatively low bias voltages. In this work we perform extensive ab initio calculations of the nonlinear current...

Eliminating the Effect of Rating Bias on Reputation Systems

Directory of Open Access Journals (Sweden)

Leilei Wu

2018-01-01

Full Text Available The ongoing rapid development of the e-commercial and interest-base websites makes it more pressing to evaluate objects’ accurate quality before recommendation. The objects’ quality is often calculated based on their historical information, such as selected records or rating scores. Usually high quality products obtain higher average ratings than low quality products regardless of rating biases or errors. However, many empirical cases demonstrate that consumers may be misled by rating scores added by unreliable users or deliberate tampering. In this case, users’ reputation, that is, the ability to rate trustily and precisely, makes a big difference during the evaluation process. Thus, one of the main challenges in designing reputation systems is eliminating the effects of users’ rating bias. To give an objective evaluation of each user’s reputation and uncover an object’s intrinsic quality, we propose an iterative balance (IB method to correct users’ rating biases. Experiments on two datasets show that the IB method is a highly self-consistent and robust algorithm and it can accurately quantify movies’ actual quality and users’ stability of rating. Compared with existing methods, the IB method has higher ability to find the “dark horses,” that is, not so popular yet good movies, in the Academy Awards.

The Joint Effect of Bias Awareness and Self-Reported Prejudice on Intergroup Anxiety and Intentions for Intergroup Contact

Science.gov (United States)

Perry, Sylvia P.; Dovidio, John F.; Murphy, Mary C.; van Ryn, Michelle

2015-01-01

Two correlational studies investigated the joint effect of Bias Awareness—a new individual difference measure that assesses Whites’ awareness and concern about their propensity to be biased—and prejudice on Whites’ intergroup anxiety and intended intergroup contact. Using a community sample (Study 1), we found the predicted Bias Awareness × Prejudice interaction. Prejudice was more strongly related to interracial anxiety among those high (vs. low) in Bias Awareness. Study 2 investigated potential behavioral consequences in an important real world context: medical students’ intentions for working primarily with minority patients. Study 2 replicated the Bias Awareness × Prejudice interaction and further demonstrated that interracial anxiety mediated medical students’ intentions to work with minority populations. PMID:25111552

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

Science.gov (United States)

Zaidi, Z. H.; Lee, K. B.; Roberts, J. W.; Guiney, I.; Qian, H.; Jiang, S.; Cheong, J. S.; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, P. R.; Houston, P. A.

2018-05-01

In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

International Nuclear Information System (INIS)

Liu, Kuan-Hsien; Chou, Wu-Ching; Chang, Ting-Chang; Chen, Hua-Mao; Tai, Ya-Hsiang; Tsai, Ming-Yen; Hung, Pei-Hua; Chu, Ann-Kuo; Wu, Ming-Siou; Hung, Yi-Syuan; Hsieh, Tien-Yu; Yeh, Bo-Liang

2014-01-01

This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast I D -V G and modulated peak/base pulse time I D -V D measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Liu, Kuan-Hsien; Chou, Wu-Ching, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw [Department of Electrophysics, National Chiao Tung University, Hsin-chu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Chen, Hua-Mao; Tai, Ya-Hsiang [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-chu 300, Taiwan (China); Tsai, Ming-Yen; Hung, Pei-Hua; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Wu, Ming-Siou; Hung, Yi-Syuan [Department of Electronics Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Yeh, Bo-Liang [Advanced Display Technology Research Center, AU Optronics, No.1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsin-Chu 30078, Taiwan (China)

2014-10-21

This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast I{sub D}-V{sub G} and modulated peak/base pulse time I{sub D}-V{sub D} measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.

Resistance and resistance fluctuations in random resistor networks under biased percolation.

Science.gov (United States)

Pennetta, Cecilia; Reggiani, L; Trefán, Gy; Alfinito, E

2002-06-01

We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased processes consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an electrical bias and of the heat exchange with a thermal bath. The electrical bias is set up by applying a constant voltage or, alternatively, a constant current. Monte Carlo simulations are performed to analyze the network evolution in the full range of bias values. Depending on the bias strength, electrical failure or steady state are achieved. Here we investigate the steady state of the RRN focusing on the properties of the non-Ohmic regime. In constant-voltage conditions, a scaling relation is found between /(0) and V/V(0), where is the average network resistance, (0) the linear regime resistance, and V0 the threshold value for the onset of nonlinearity. A similar relation is found in constant-current conditions. The relative variance of resistance fluctuations also exhibits a strong nonlinearity whose properties are investigated. The power spectral density of resistance fluctuations presents a Lorentzian spectrum and the amplitude of fluctuations shows a significant non-Gaussian behavior in the prebreakdown region. These results compare well with electrical breakdown measurements in thin films of composites and of other conducting materials.

Programming Arduino to Control Bias Voltages to Temperature-Depedndent Gamma-ray Detectors aboard TRYAD Mission

Science.gov (United States)

Stevons, C. E.; Jenke, P.; Briggs, M. S.

2016-12-01

Terrestrial Gamma-ray Flashes (TGFs) are sub-millisecond gamma-ray flashes that are correlated with lightning have been observed with numerous satellites since their discovery in the early 1990s. Although substantial research has been conducted on TGFs, puzzling questions regarding their origin are still left unanswered. Consequently, the Terrestrial RaYs Analysis and Detection (TRYAD) mission is designed to solve many issues about TGFs by measuring the beam profile and orientation of TGFs in low Earth orbit. This project consists of sending two CubeSats into low-Earth orbit where they will independently sample TGF beams. Both of the TRYAD CubeSats will contain a gamma-ray detector composed of lead doped plastic scintillator coupled to silicon photomultiplier (SiPM) arrays. The gain readings of the SiPMs vary with temperature and the bias voltage must be corrected to compensate. Using an Arduino micro-controller, circuitry and software was developed to control the gain in response to the resistance of a thermistor. I will present the difficulties involved with this project along with our solutions.

Variation of microchannel plate resistance with temperature and applied voltage

International Nuclear Information System (INIS)

Pearson, J.F.; Fraser, G.W.; Whiteley, M.J.

1987-01-01

The resistance of microchannel plate electron multiplier is well known to be a function of both applied voltage and detector temperature. We show that the apparent variation of resistance with bias voltage is simply due to plate temperature increases resulting from resistive heating. (orig.)

The Coefficient of the Voltage Induced Frequency Shift Measurement on a Quartz Tuning Fork

Directory of Open Access Journals (Sweden)

Yubin Hou

2014-11-01

Full Text Available We have measured the coefficient of the voltage induced frequency shift (VIFS of a 32.768 KHz quartz tuning fork. Three vibration modes were studied: one prong oscillating, two prongs oscillating in the same direction, and two prongs oscillating in opposite directions. They all showed a parabolic dependence of the eigen-frequency shift on the bias voltage applied across the fork, due to the voltage-induced internal stress, which varies as the fork oscillates. The average coefficient of the VIFS effect is as low as several hundred nano-Hz per millivolt, implying that fast-response voltage-controlled oscillators and phase-locked loops with nano-Hz resolution can be built.

Boron doped bcc-W films: Achieving excellent mechanical properties and tribological performance by regulating substrate bias voltage

Science.gov (United States)

Yang, Lina; Zhang, Kan; Zeng, Yi; Wang, Xin; Du, Suxuan; Tao, Chuanying; Ren, Ping; Cui, Xiaoqiang; Wen, Mao

2017-11-01

Boron doped bcc-W (WBx, x = B/W) films were deposited on Si(100) substrates by magnetron co-sputtering pure W and B targets. Our results reveal that when the absolute value of substrate bias voltage (Vb) increases from floating to 240 V, the value of x monotonously decreases from 0.18 to 0.04, accompanied by a phase transition from a mixture of tetragonal γ-W2B and body-centered cubic α-W(B) phase (-Vb ≤ 60 V) to α-W(B) single phase (-Vb > 60 V). Hardness, depending on Vb, increases first and then drops, where the maximum hardness of 30.8 GPa was obtained at -Vb = 60 V and far higher than pure W and W2B theoretical value. In the mixed phase structure, the grain boundaries strengthening, Hall-Petch effect and solid-solution strengthening induced by B dominate the strengthening mechanism. Astonishingly, the film grown at -Vb = 120 V still possesses twice higher hardness than pure W, wherein unexpectedly low (6.7 at.%) B concentration and only the single α-W(B) phase can be identified. In this case, both Hall-Petch effect and solid-solution strengthening work. Besides, low friction coefficient of ∼0.18 can be obtained for the films with α-W(B) phase, which is competitive to that of reported B-rich transition-metal borides, such as TiB2, CrB and CrB2.

The mediating role of state maladaptive emotion regulation in the relation between social anxiety symptoms and self-evaluation bias.

Science.gov (United States)

Sarfan, Laurel D; Cody, Meghan W; Clerkin, Elise M

2018-03-16

Although social anxiety symptoms are robustly linked to biased self-evaluations across time, the mechanisms of this relation remain unclear. The present study tested three maladaptive emotion regulation strategies - state post-event processing, state experiential avoidance, and state expressive suppression - as potential mediators of this relation. Undergraduate participants (N = 88; 61.4% Female) rated their social skill in an impromptu conversation task and then returned to the laboratory approximately two days later to evaluate their social skill in the conversation again. Consistent with expectations, state post-event processing and state experiential avoidance mediated the relation between social anxiety symptoms and worsening self-evaluations of social skill (controlling for research assistant evaluations), particularly for positive qualities (e.g. appeared confident, demonstrated social skill). State expressive suppression did not mediate the relation between social anxiety symptoms and changes in self-evaluation bias across time. These findings highlight the role that spontaneous, state experiential avoidance and state post-event processing may play in the relation between social anxiety symptoms and worsening self-evaluation biases of social skill across time.

Zero-bias microwave detectors based on array of nanorectifiers coupled with a dipole antenna

Science.gov (United States)

Kasjoo, Shahrir R.; Singh, Arun K.; Mat Isa, Siti S.; Ramli, Muhammad M.; Mohamad Isa, Muammar; Ahmad, Norhawati; Mohd Nor, Nurul I.; Khalid, Nazuhusna; Song, Ai Min

2016-04-01

We report on zero-bias microwave detection using a large array of unipolar nanodevices, known as the self-switching diodes (SSDs). The large array was realized in a single lithography step without the need of interconnection layers, hence allowing for a simple and low-cost fabrication process. The SSD array was coupled with a narrowband dipole antenna with a resonant frequency of 890 MHz, to form a simple rectenna (rectifying antenna). The extrinsic voltage responsivity and noise-equivalent-power (NEP) of the rectenna were ∼70 V/W and ∼0.18 nW/Hz1/2, respectively, measured in the far-field region at unbiased condition. Nevertheless, the estimated intrinsic voltage responsivity can achieve up to ∼5 kV/W with NEP of ∼2.6 pW/Hz1/2.

Effects of Inventory Bias on Landslide Susceptibility Calculations

Science.gov (United States)

Stanley, T. A.; Kirschbaum, D. B.

2017-01-01

Many landslide inventories are known to be biased, especially inventories for large regions such as Oregon's SLIDO or NASA's Global Landslide Catalog. These biases must affect the results of empirically derived susceptibility models to some degree. We evaluated the strength of the susceptibility model distortion from postulated biases by truncating an unbiased inventory. We generated a synthetic inventory from an existing landslide susceptibility map of Oregon, then removed landslides from this inventory to simulate the effects of reporting biases likely to affect inventories in this region, namely population and infrastructure effects. Logistic regression models were fitted to the modified inventories. Then the process of biasing a susceptibility model was repeated with SLIDO data. We evaluated each susceptibility model with qualitative and quantitative methods. Results suggest that the effects of landslide inventory bias on empirical models should not be ignored, even if those models are, in some cases, useful. We suggest fitting models in well-documented areas and extrapolating across the study region as a possible approach to modeling landslide susceptibility with heavily biased inventories.

Self-reported Cognitive Biases Moderate the Associations Between Social Stress and Paranoid Ideation in a Virtual Reality Experimental Study

NARCIS (Netherlands)

Pot-Kolder, Roos; Veling, Wim; Counotte, Jacqueline; van der Gaag, Mark

2017-01-01

Introduction: Cognitive biases are associated with psychosis liability and paranoid ideation. This study investigated the moderating relationship between pre-existing self-reported cognitive biases and the occurrence of paranoid ideation in response to different levels of social stress in a virtual

Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

Directory of Open Access Journals (Sweden)

Sangeeta Singh

2016-03-01

Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

Science.gov (United States)

Singh, Amol; Uddin, Ahsan; Sudarshan, Tangali; Koley, Goutam

2014-04-24

A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity. Such sensitivity control is also possible by carefully selecting the graphene/Si heterojunction Schottky barrier height. Compared to a conventional graphene amperometric sensor fabricated on the same chip, the proposed sensor demonstrated 13 times higher sensitivity for NO₂ and 3 times higher for NH₃ in ambient conditions, while consuming ∼500 times less power for same magnitude of applied voltage bias. The sensing mechanism based on heterojunction Schottky barrier height change has been confirmed using capacitance-voltage measurements. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A scanning tunneling microscope break junction method with continuous bias modulation.

Science.gov (United States)

Beall, Edward; Yin, Xing; Waldeck, David H; Wierzbinski, Emil

2015-09-28

Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule.

Effects of constant voltage and constant current stress in PCBM:P3HT solar cells

DEFF Research Database (Denmark)

Cester, Andrea; Rizzo, Aldo; Bazzega, A.

2015-01-01

The aimof this work is the investigation of forward and reverse bias stress effects, cell self-heating and annealing in roll coated organic solar cells with PCBM:P3HT active layer. In reverse bias stress cells show a constant degradation over time. In forward current stress cells alternate...... mechanisms: the decrease of the net generation rate (due to formation of exciton quenching centres or the reduction of exciton separation rate); the formation of small leaky paths between anode and cathode, which reduces the total current extracted from the cell. The stress-induced damage can be recovered...... degradation and annealing phases, which are explained through the high power dissipation during the current stress, and the consequent self-heating. The high temperature is able to recover the cell performances at least until a critical temperature is reached. The degradation can be explained by the following...

The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors

International Nuclear Information System (INIS)

Kim, Chul Ho; Rim, You Seung; Kim, Hyun Jae

2014-01-01

We investigated the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors (IGZO TFTs) using zinc–tin-oxide (ZTO) as the etch-stopper layer, the so-called dual-active-layered ZTO/IGZO TFT (DALZI TFT). The DALZI TFT can use a low-cost back-channel-etch structure because of the high chemical stability of the upper ZTO layer. The DALZI TFT exhibited only a threshold voltage shift of −1.86 V under negative bias illumination stress (NBIS) conditions (stress time = 1000 s), while the unpassivated IGZO TFT suffered from a threshold voltage shift of −19.59 V under NBIS conditions (stress time = 1000 s). The superior bias stress stability of the DALZI TFT is attributed not only to the densification effect by the multi-stacking process but also to the lower sensitivity to ambient gases (e.g., oxygen and water vapour) due to the low oxygen vacancy in the upper ZTO layer. (paper)

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

Science.gov (United States)

Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

1988-01-01

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Self-excitation of single nanomechanical pillars

Science.gov (United States)

Kim, Hyun S.; Qin, Hua; Blick, Robert H.

2010-03-01

Self-excitation is a mechanism that is ubiquitous for electromechanical power devices such as electrical generators. This is conventionally achieved by making use of the magnetic field component in electrical generators (Nedic and Lipo 2000 IEEE/IAS Conf. Records (Rome, Italy) vol 1 pp 51-6), a good and widely visible example of which is the wind turbine farm (Muljadi et al 2005 J. Sol. Energy Eng. 127 581-7). In other words, a static force, such as the wind acting on rotor blades, can generate a resonant excitation at a certain mechanical frequency. For nanomechanical systems (Craighead 2000 Science 290 1532-5 Roukes 2001 Phys. World 14 25-31 Cleland 2003 Foundations of Nanomechanics (Berlin: Springer); Ayari et al 2007 Nano Lett. 7 2252-7 Koenig et al 2008 Nat. Nanotechnol. 3 482-4) such a self-excitation (SE) mechanism is also highly desirable, because it can generate mechanical oscillations at radio frequencies by simply applying a dc bias voltage. This is of great importance for low-power signal communication devices and detectors, as well as for mechanical computing elements. For a particular nanomechanical system—the single electron shuttle—this effect was predicted some time ago by Gorelik et al (Phys. Rev. Lett. 80 4526-9). Here, we use a nanoelectromechanical single electron transistor (NEMSET) to demonstrate self-excitation for both the soft and hard regimes, respectively. The ability to use self-excitation in nanomechanical systems may enable the detection of quantum mechanical backaction effects (Naik et al 2006 Nature 443 193-6) in direct tunneling, macroscopic quantum tunneling (Savelev et al 2006 New J. Phys. 8 105-15) and rectification (Pistolesi and Fazio 2005 Phys. Rev. Lett. 94 036806-4). All these effects have so far been overshadowed by the large driving voltages that had to be applied.

Effects of standard and explicit cognitive bias modification and computer-administered cognitive-behaviour therapy on cognitive biases and social anxiety.

Science.gov (United States)

Mobini, Sirous; Mackintosh, Bundy; Illingworth, Jo; Gega, Lina; Langdon, Peter; Hoppitt, Laura

2014-06-01

This study examines the effects of a single session of Cognitive Bias Modification to induce positive Interpretative bias (CBM-I) using standard or explicit instructions and an analogue of computer-administered CBT (c-CBT) program on modifying cognitive biases and social anxiety. A sample of 76 volunteers with social anxiety attended a research site. At both pre- and post-test, participants completed two computer-administered tests of interpretative and attentional biases and a self-report measure of social anxiety. Participants in the training conditions completed a single session of either standard or explicit CBM-I positive training and a c-CBT program. Participants in the Control (no training) condition completed a CBM-I neutral task matched the active CBM-I intervention in format and duration but did not encourage positive disambiguation of socially ambiguous or threatening scenarios. Participants in both CBM-I programs (either standard or explicit instructions) and the c-CBT condition exhibited more positive interpretations of ambiguous social scenarios at post-test and one-week follow-up as compared to the Control condition. Moreover, the results showed that CBM-I and c-CBT, to some extent, changed negative attention biases in a positive direction. Furthermore, the results showed that both CBM-I training conditions and c-CBT reduced social anxiety symptoms at one-week follow-up. This study used a single session of CBM-I training, however multi-sessions intervention might result in more endurable positive CBM-I changes. A computerised single session of CBM-I and an analogue of c-CBT program reduced negative interpretative biases and social anxiety. Copyright © 2014 The Authors. Published by Elsevier Ltd.. All rights reserved.

Numerical simulation of the self-pumped long Josephson junction using a modified sine-Gordon model

International Nuclear Information System (INIS)

Sobolev, A.S.; Pankratov, A.L.; Mygind, J.

2006-01-01

We have numerically investigated the dynamics of a long Josephson junction (flux-flow oscillator) biased by a DC current in the presence of magnetic field. The study is performed in the frame of the modified sine-Gordon model, which includes the surface losses, RC-load at both FFO ends and the self-pumping effect. In our model the dumping parameter depends both on the spatial coordinate and the amplitude of the AC voltage. In order to find the DC FFO voltage the damping parameter has to be calculated by successive approximations and time integration of the perturbed sine-Gordon equation. The modified model, which accounts for the presence of the superconducting gap, gives better qualitative agreement with experimental results compare to the conventional sine-Gordon model

Room temperature large self-biased magnetoelectric effect in non-lead based piezoelectric and magnetostrictive (0−3) particulate composite system

International Nuclear Information System (INIS)

Kumari, Mukesh; Prakash, Chandra; Chatterjee, Ratnamala

2017-01-01

In this work, room temperature magnetoelectric properties of (0−3) particulate composites of non lead based piezoelectric BNTKNNLTS [0.97(Bi 0.5 Na 0.5 TiO 3 )–0.03(K 0.47 Na 0.47 Li 0.06 Nb 0.74 Sb 0.06 Ta 0.2 O 3 ) and magnetostrictive CZFMO (Co 0.6 Zn 0.4 Fe 1.7 Mn 0.3 O 4 ) are presented. Composite samples of (1-x)(BNTKNNLTS)-x(CZFMO) , with x=0.1 and 0.5, are synthesized by solid state reaction route. X-ray diffraction confirms the single phase formation of parent phases and the presence of two phases in the composites. Similar sintering conditions of the two individual components lead to optimal ferroelectric and ferromagnetic properties in the composites. A large self-biased magnetoelectric (ME) coupling ~74 mV/cm.Oe for the sample with x=0.1 (measured in longitudinally magnetized-transversely polarized configuration) is observed at room temperature. - Highlights: • Modified BNT-CFO based (0−3) particulate composites have been synthesized. • Similar sintering conditions of two components lead to optimal multiferroicity. • A large self-biased ME coupling ~74 mV/cm. Oe is obtained at room temperature.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Energy Technology Data Exchange (ETDEWEB)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

2015-08-24

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

Statistical study on the self-selection bias in FDG-PET cancer screening by a questionnaire survey

International Nuclear Information System (INIS)

Kita, Tamotsu; Yano, Fuzuki; Watanabe, Sadahiro; Soga, Shigeyoshi; Hama, Yukihiro; Shinmoto, Hiroshi; Kosuda, Shigeru

2008-01-01

A questionnaire survey was performed to investigate the possible presence of self-selection bias in 18 F-fluorodeoxyglucose (FDG) positron emission tomography (PET) cancer screening (PET cancer screening). Responders to the questionnaires survey consisted of 80 healthy persons, who answered whether they undergo PET cancer screening, health consciousness, age, sex, and smoking history. The univariate and multivariate analyses on the four parameters were performed between the responders who were to undergo PET cancer screening and the responders who were not. Statistically significant difference was found in health consciousness between the above-mentioned two groups by both univariate and multivariate analysis with the odds ratio of 2.088. The study indicated that self-selection bias should exist in PET cancer screening. (author)

Magnetosphere-ionosphere coupling currents in Jupiter's middle magnetosphere: effect of magnetosphere-ionosphere decoupling by field-aligned auroral voltages

Directory of Open Access Journals (Sweden)

J. D. Nichols

2005-03-01

Full Text Available We consider the effect of field-aligned voltages on the magnetosphere-ionosphere coupling current system associated with the breakdown of rigid corotation of equatorial plasma in Jupiter's middle magnetosphere. Previous analyses have assumed perfect mapping of the electric field and flow along equipotential field lines between the equatorial plane and the ionosphere, whereas it has been shown that substantial field-aligned voltages must exist to drive the field-aligned currents associated with the main auroral oval. The effect of these field-aligned voltages is to decouple the flow of the equatorial and ionospheric plasma, such that their angular velocities are in general different from each other. In this paper we self-consistently include the field-aligned voltages in computing the plasma flows and currents in the system. A third order differential equation is derived for the ionospheric plasma angular velocity, and a power series solution obtained which reduces to previous solutions in the limit that the field-aligned voltage is small. Results are obtained to second order in the power series, and are compared to the original zeroth order results with no parallel voltage. We find that for system parameters appropriate to Jupiter the effect of the field-aligned voltages on the solutions is small, thus validating the results of previously-published analyses.

When Dishonesty Leads to Trust: Moral Judgments Biased by Self-interest are Truly Believed

Directory of Open Access Journals (Sweden)

Bocian Konrad

2016-09-01

Full Text Available Research has shown that cheating is perceived as immoral when it serves the cheater’s interests, though it can be seen as moral when it serves the interests of the perceiver. However, are such biased moral judgments real, or are they merely lip service? To answer the question of whether biased moral judgments actually inform behavior, the authors asked participants to observe a confederate who either cheated for money or did not cheat, which benefited either the confederate alone or both the confederate and the participating observer. Then, participants evaluated the confederate and, finally, played a one shot trust game with her. Cheating influenced moral judgments and decreased behavioral trust, but this only occurred when self-interest was not involved. When self-interest was involved, participants showed no significant differences in trust levels, independent of whether the confederate had cheated or not. Implications for the dual process theory in moral psychology are discussed.

Voltage control of cavity magnon polariton

Energy Technology Data Exchange (ETDEWEB)

Kaur, S., E-mail: kaurs3@myumanitoba.ca; Rao, J. W.; Gui, Y. S.; Hu, C.-M., E-mail: hu@physics.umanitoba.ca [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Yao, B. M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

2016-07-18

We have experimentally investigated the microwave transmission of the cavity-magnon-polariton (CMP) generated by integrating a low damping magnetic insulator onto a 2D microwave cavity. The high tunability of our planar cavity allows the cavity resonance frequency to be precisely controlled using a DC voltage. By appropriately tuning the voltage and magnetic bias, we can observe the cavity photon magnon coupling and the magnetic coupling between a magnetostatic mode and the generated CMP. The dispersion of the generated CMP was measured by either tuning the magnetic field or the applied voltage. This electrical control of CMP may open up avenues for designing advanced on-chip microwave devices that utilize light-matter interaction.

Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

Science.gov (United States)

Dix-Peek, RM.; van Dyk, EE.; Vorster, FJ.; Pretorius, CJ.

2018-04-01

Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.

Theory and experiment on charging and discharging a capacitor through a reverse-biased diode

Science.gov (United States)

Roy, Arijit; Mallick, Abhishek; Adhikari, Aparna; Guin, Priyanka; Chatterjee, Dibyendu

2018-06-01

The beauty of a diode lies in its voltage-dependent nonlinear resistance. The voltage on a charging and discharging capacitor through a reverse-biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. Instead of the exponential dependence of charging and discharging voltages with time for a resistor-capacitor circuit, a linear time dependence is found when the resistor is replaced by a reverse-biased diode. Thus, well controlled positive and negative ramp voltages are obtained from the charging and discharging diode-capacitor circuits. This experiment can readily be performed in an introductory physics and electronics laboratory.

The transfer voltage standard for calibration outside of a laboratory

Directory of Open Access Journals (Sweden)

Urekar Marjan

2017-01-01

Full Text Available The transfer voltage standard is designed for transferring the analog voltage from a calibrator to the process control workstation for multi-electrode electrolysis process in a plating plant. Transfer voltage standard is based on polypropylene capacitors and operational amplifiers with tera-ohm range input resistance needed for capacitor self-discharging effect cancellation. Dielectric absorption effect is described. An instrument for comparison of reference and control voltages is devised, based on precise window comparator. Detailed description of the main task is given, including constraints, theoretical and practical solutions. Procedure for usage of the standard outside of a laboratory conditions is explained. Comparison of expected and realized standard characteristics is given. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. TR-32019

Profile Control by Biased Electrodes in Large Diameter RF Produced Pl asma

Science.gov (United States)

Shinohara, Shunjiro; Matsuoka, Norikazu; Yoshinaka, Toshiro

1998-10-01

Control of the plasma profile has been carried out, using the voltage biasing method in the large diameter (45 cm) RF (radio frequency) produced plasma in the presence of the uniform magnetic field (less than 1200 G). Under the low filling pressure condition of 0.16 mTorr, changing the biasing voltages to the three individual end plates with concentric circular ring shapes, the radial electron density (about 10^10 cm-3) profile could be changed from the hollow to the peaked one. On the contrary, the nearly flat electron temperature (several eV) profile did not change appreciably. The azimuthal rotation velocity measured by the Mach probe, i.e. directional probe, showed the different radial profiles (but nearly uniform along the axis) depending on the biasing voltage. This velocity became slower with the low magnetic field (less than 200 G) or in the higher pressure regime up to 20 mTorr with the higher electron density. The experimental results by other biasing methods will also be presented.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

Science.gov (United States)

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-12-14

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

Science.gov (United States)

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-01-01

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

Does attention redirection contribute to the effectiveness of attention bias modification on social anxiety?

Science.gov (United States)

Yao, Nisha; Yu, Hongyu; Qian, Mingyi; Li, Songwei

2015-12-01

Attention bias modification (ABM) is designed to modify threat-related attention bias and thus alleviate anxiety. The current research examined whether consistently directing attention towards targeted goals per se contributes to ABM efficacy. We randomly assigned 68 non-clinical college students with elevated social anxiety to non-valence-specific attend-to-geometrics (AGC), attention modification (AMC), or attention control (ACC) conditions. We assessed subjective, behavioral, and physiological reactivity to a speech task and self-reported social anxiety symptoms. After training, participants in the AMC exhibited an attention avoidance from threat, and those in the AGC responded more rapidly toward targeted geometrics. There was a significant pre- to post-reduction in subjective speech distress across groups, but behavioral and physiological reactivity to speech, as well as self-report social anxiety symptoms, remained unchanged. These results lead to questions concerning effectiveness of ABM training for reducing social anxiety. Further examination of the current ABM protocol is required. Copyright © 2015 Elsevier Ltd. All rights reserved.

Radiation effects on residual voltage of polyethylene films

International Nuclear Information System (INIS)

Kyokane, Jun; Park, Dae-Hee; Yoshino, Katsumi.

1986-01-01

It has recently been pointed out that diagnosis of deterioration in insulating materials for electric cables used in nuclear power plants and outer space (communications satellite in particular) can be effectively performed based on measurements of residual voltage. In the present study, polyethylene films are irradiated with γ-rays or electron beam to examine the changes in residual voltage characteristics. Irradiation of electron beam and γ-rays are carried out to a dose of 0 - 90 Mrad and 0 - 100 Mrad, respectively. Measurements are made of the dependence of residual voltage on applied voltage, electron beam and γ-ray irradiation, annealing temperature and annealing time. Results show that carriers, which are once trapped after being released from the electrode, move within the material after the opening of the circuit to produce resiual voltage. The residual voltage increases with increasing dose of electron beam or γ-ray and levels off at high dose. Residual voltage is increased about several times by either electron beam or γ-rays, but electron beam tends to cause greater residual voltage than γ-ray. Polyethylene films irradiated with electron beam can recover upon annealing. It is concluded from observations made that residual voltage has close relations with defects in molecular structures caused by radiations, particularly the breaking of backbone chains and alteration in superstructures. (Nogami, K.)

Effect of neutron irradiation on the breakdown voltage of power MOSFET's

International Nuclear Information System (INIS)

Hasan, S.M.Y.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

1994-01-01

The effect of neutron irradiation on power metal-oxide-semiconductor field effect transistor (power MOSFET) breakdown voltage has been investigated. Transistors with various breakdown voltage ratings were irradiated in a TRIGA nuclear reactor with cumulative fluence levels up to 5 x 10 14 neutrons/cm 2 (1 MeV equivalent). Noticeable increases in the breakdown voltages are observed in n-type MOSFET's after 10 13 neutrons/cm 2 and in p-type MOSFETs after 10 12 neutrons/cm 2 . An increase in breakdown voltage of as much as 30% is observed after 5 x 10 14 neutrons/cm 2 . The increase in breakdown voltage is attributed to the neutron-irradiation-induced defects which decrease the mean free path and trap majority carriers in the space charge region. The effect of positive trapped oxide charge due to concomitant gamma radiation and the effect of the termination structure on the increase in breakdown voltage are considered. An empirical model is presented to predict the value of the breakdown voltage as a function of neutron fluence

Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

International Nuclear Information System (INIS)

Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

2014-01-01

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

High Efficient THz Emission From Unbiased and Biased Semiconductor Nanowires Fabricated Using Electron Beam Lithography

Energy Technology Data Exchange (ETDEWEB)

Balci, Soner; Czaplewski, David A.; Jung, Il Woong; Kim, Ju-Hyung; Hatami, Fariba; Kung, Patrick; Kim, Seongsin Margaret

2017-07-01

Besides having perfect control on structural features, such as vertical alignment and uniform distribution by fabricating the wires via e-beam lithography and etching process, we also investigated the THz emission from these fabricated nanowires when they are applied DC bias voltage. To be able to apply a voltage bias, an interdigitated gold (Au) electrode was patterned on the high-quality InGaAs epilayer grown on InP substrate bymolecular beam epitaxy. Afterwards, perfect vertically aligned and uniformly distributed nanowires were fabricated in between the electrodes of this interdigitated pattern so that we could apply voltage bias to improve the THz emission. As a result, we achieved enhancement in the emitted THz radiation by ~four times, about 12 dB increase in power ratio at 0.25 THz with a DC biased electric field compared with unbiased NWs.

Visual search attentional bias modification reduced social phobia in adolescents.

Science.gov (United States)

De Voogd, E L; Wiers, R W; Prins, P J M; Salemink, E

2014-06-01

An attentional bias for negative information plays an important role in the development and maintenance of (social) anxiety and depression, which are highly prevalent in adolescence. Attention Bias Modification (ABM) might be an interesting tool in the prevention of emotional disorders. The current study investigated whether visual search ABM might affect attentional bias and emotional functioning in adolescents. A visual search task was used as a training paradigm; participants (n = 16 adolescents, aged 13-16) had to repeatedly identify the only smiling face in a 4 × 4 matrix of negative emotional faces, while participants in the control condition (n = 16) were randomly allocated to one of three placebo training versions. An assessment version of the task was developed to directly test whether attentional bias changed due to the training. Self-reported anxiety and depressive symptoms and self-esteem were measured pre- and post-training. After two sessions of training, the ABM group showed a significant decrease in attentional bias for negative information and self-reported social phobia, while the control group did not. There were no effects of training on depressive mood or self-esteem. No correlation between attentional bias and social phobia was found, which raises questions about the validity of the attentional bias assessment task. Also, the small sample size precludes strong conclusions. Visual search ABM might be beneficial in changing attentional bias and social phobia in adolescents, but further research with larger sample sizes and longer follow-up is needed. Copyright © 2013 Elsevier Ltd. All rights reserved.

DC-pulsed voltage electrochemical method based on duty cycle self-control for producing TERS gold tips

International Nuclear Information System (INIS)

Vasilchenko, V E; Kharintsev, S S; Salakhov, M Kh

2013-01-01

This paper presents a modified dc-pulsed low voltage electrochemical method in which a duty cycle is self tuned while etching. A higher yield of gold tips suitable for performing tip-enhanced Raman scattering (TERS) measurements is demonstrated. The improvement is caused by the self-control of the etching rate along the full surface of the tip. A capability of the gold tips to enhance a Raman signal is exemplified by TERS spectroscopy of single walled carbon nanotubes bundle, sulfur and vanadium oxide

Application of the voltage biased digital relay for the optimal protection of high inertia drive induction motors

International Nuclear Information System (INIS)

Choi, D. B.

1999-01-01

This paper describes typical protection schemes for large-size high inertia drive motor that are generally rotor thermal limited. Difficult and variable starting conditions of the large-size high inertia drive motor and compromises in the selection and setting of the protective devices are frequently encountered. The motors that typically encounter severe starting duty and present difficulties in achieving full motor protection are reactor coolant pumps (RCPs), blowers and compressors. For difficult starting conditions that are encountered by the large-size high inertia drive motors, state-of-the-art computer based calculations are capable of providing realistic predictions of the band of margin available for applying the protective relay. Based on the analysis of starting characteristics of large-size high inertia drive motors, this paper recommends that the optimal protection scheme for high inertia drive motors for nuclear power plants can be achieved by using the voltage biased digital relay instead of a speed switch and conventional overcurrent relays. (author)

Analysis of the giant magnetostrictive actuator with strong bias magnetic field

Energy Technology Data Exchange (ETDEWEB)

Xue, Guangming, E-mail: yy0youxia@163.com; He, Zhongbo; Li, Dongwei; Yang, Zhaoshu; Zhao, Zhenglong

2015-11-15

Giant magnetostrictive actuator with strong bias magnetic field is designed to control the injector bullet valve opening and closing. The relationship between actuator displacement amplitude and input signal direction is analyzed. And based on the approximate linearity of strain-magnetic field, second-order system model of the actuator displacement is established. Experimental system suitable for the actuator is designed. The experimental results show that, the square voltage amplitude being 12 V, the actuator displacement amplitude is about 17 μm with backward direction signal input while being 1.5 μm under forward direction signal. From the results, the suitable input direction is confirmed to be backward. With exciting frequncy lower than 200 Hz, the error between the model and experimental result is less than 1.7 μm. So the model is validated under the low-frequency signal input. The testing displacement-voltage curves are approximately straight lines. But due to the biased position, the line slope and the displacement-voltage linearity change as the input voltage changes. - Highlights: • Giant magnetostrictive actuator with strong bias magnetic field is designed. • The relationship between actuator displacement amplitude and input current direction is analyzed. • The model of the actuator displacement is established and its accuracy is verified by the test. • The actuator displacement-voltage curves are achieved by the test, and the curves’ characteristics are analyzed theoretically.

Low-voltage self-assembled monolayer field-effect transistors on flexible substrates.

Science.gov (United States)

Schmaltz, Thomas; Amin, Atefeh Y; Khassanov, Artoem; Meyer-Friedrichsen, Timo; Steinrück, Hans-Georg; Magerl, Andreas; Segura, Juan José; Voitchovsky, Kislon; Stellacci, Francesco; Halik, Marcus

2013-08-27

Self-assembled monolayer field-effect transistors (SAMFETs) of BTBT functionalized phosphonic acids are fabricated. The molecular design enables device operation with charge carrier mobilities up to 10(-2) cm(2) V(-1) s(-1) and for the first time SAMFETs which operate on rough, flexible PEN substrates even under mechanical substrate bending. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Controlling for Response Bias in Self-Ratings of Personality: A Comparison of Impression Management Scales and the Overclaiming Technique.

Science.gov (United States)

Müller, Sascha; Moshagen, Morten

2018-04-12

Self-serving response distortions pose a threat to the validity of personality scales. A common approach to deal with this issue is to rely on impression management (IM) scales. More recently, the overclaiming technique (OCT) has been proposed as an alternative and arguably superior measure of such biases. In this study (N = 162), we tested these approaches in the context of self- and other-ratings using the HEXACO personality inventory. To the extent that the OCT and IM scales can be considered valid measures of response distortions, they are expected to account for inflated self-ratings in particular for those personality dimensions that are prone to socially desirable responding. However, the results show that neither the OCT nor IM account for overly favorable self-ratings. The validity of IM as a measure of response biases was further scrutinized by a substantial correlation with other-rated honesty-humility. As such, this study questions the use of both the OCT and IM to assess self-serving response distortions.

Properties of TiO{sub 2} thin films deposited by rf reactive magnetron sputtering on biased substrates

Energy Technology Data Exchange (ETDEWEB)

Nezar, Sawsen, E-mail: snezar@cdta.dz [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Saoula, Nadia [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Sali, Samira [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE Algiers) (Algeria); Faiz, Mohammed; Mekki, Mogtaba [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Laoufi, Nadia Aïcha [Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Tabet, Nouar [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University (HBKU), Doha (Qatar)

2017-02-15

Highlights: • TiO{sub 2} thin films were deposited on negatively biased substrates by rf magnetron sputtering technique. • The bias favors the formation of TiO{sub 2} crystalline phase. • The roughness of the films increases and the grain size decreases as the bias voltage is varied between (0 and −100 V). • XPS reveals the presence of adsorbed humidity of the surface and Ti{sup 4+} oxidation state in the as prepared samples. - Abstract: TiO{sub 2} thin films are of paramount importance due to their pervasive applications. In contrast to previous published works where the substrate was heated at high temperatures to obtain TiO{sub 2} crystalline phase, we show in this study that it is possible to deposit crystalline TiO{sub 2} thin films on biased and unbiased substrate at room temperature using reactive rf magnetron sputtering. The bias voltage was varied from 0 V to −100 V. The deposited films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, Raman spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and atomic force microscopy (AFM). The average crystallite size was estimated using x-ray diffraction. The results showed that the application of negative bias affects the surface roughness of the films and favors the formation of the rutile phase. The root mean square roughness (R{sub rms}), the average grain size and the optical band gap of the films decreased as the substrate bias voltage was varied from 0 to −100 V. The UV–visible transmittance spectra showed that the films were transparent in the visible range and absorb strongly in the UV range. This study shows that biasing the substrate could be a promising and effective alternative to deposit TiO{sub 2} crystallized thin films of engineered properties at room temperature.

The Effect of Swarming on a Voltage Potential-Based Conflict Resolution Algorithm

NARCIS (Netherlands)

Maas, J.B.; Sunil, E.; Ellerbroek, J.; Hoekstra, J.M.; Tra, M.A.P.

2016-01-01

Several conflict resolution algorithms for airborne self-separation rely on principles derived from the repulsive forces that exist between similarly charged particles. This research investigates whether the performance of the Modified Voltage Potential algorithm, which is based on this algorithm,

Room temperature large self-biased magnetoelectric effect in non-lead based piezoelectric and magnetostrictive (0−3) particulate composite system

Energy Technology Data Exchange (ETDEWEB)

Kumari, Mukesh [Magnetics & Advanced Ceramics Laboratory, Indian Institute of Technology, Delhi-110016 India (India); Prakash, Chandra [Solid State Physics Laboratory Timarpur, Delhi-110054 India (India); Chatterjee, Ratnamala, E-mail: rmala@physics.iitd.ac.in [Magnetics & Advanced Ceramics Laboratory, Indian Institute of Technology, Delhi-110016 India (India)

2017-05-01

In this work, room temperature magnetoelectric properties of (0−3) particulate composites of non lead based piezoelectric BNTKNNLTS [0.97(Bi{sub 0.5}Na{sub 0.5}TiO{sub 3})–0.03(K{sub 0.47}Na{sub 0.47}Li{sub 0.06}Nb{sub 0.74}Sb{sub 0.06}Ta{sub 0.2}O{sub 3}) and magnetostrictive CZFMO (Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4}) are presented. Composite samples of (1-x)(BNTKNNLTS)-x(CZFMO){sub ,} with x=0.1 and 0.5, are synthesized by solid state reaction route. X-ray diffraction confirms the single phase formation of parent phases and the presence of two phases in the composites. Similar sintering conditions of the two individual components lead to optimal ferroelectric and ferromagnetic properties in the composites. A large self-biased magnetoelectric (ME) coupling ~74 mV/cm.Oe for the sample with x=0.1 (measured in longitudinally magnetized-transversely polarized configuration) is observed at room temperature. - Highlights: • Modified BNT-CFO based (0−3) particulate composites have been synthesized. • Similar sintering conditions of two components lead to optimal multiferroicity. • A large self-biased ME coupling ~74 mV/cm. Oe is obtained at room temperature.

Placebo effect studies are susceptible to response bias and to other types of biases

DEFF Research Database (Denmark)

Hróbjartsson, Asbjørn; Kaptchuk, Ted J; Miller, Franklin G

2011-01-01

Investigations of the effect of placebo are often challenging to conduct and interpret. The history of placebo shows that assessment of its clinical significance has a real potential to be biased. We analyze and discuss typical types of bias in studies on placebo....

Low-bias negative differential conductance controlled by electrode separation

International Nuclear Information System (INIS)

Yi Xiao-Hua; Liu Ran; Bi Jun-Jie; Jiao Yang; Wang Chuan-Kui; Li Zong-Liang

2016-01-01

The electronic transport properties of a single thiolated arylethynylene molecule with 9,10-dihydroanthracene core, denoted as TADHA, is studied by using non-equilibrium Green’s function formalism combined with ab initio calculations. The numerical results show that the TADHA molecule exhibits excellent negative differential conductance (NDC) behavior at lower bias regime as probed experimentally. The NDC behavior of TADHA molecule originates from the Stark effect of the applied bias voltage, by which the highest occupied molecular orbital (HOMO) and the HOMO-1 are pulled apart and become localized. The NDC behavior of TADHA molecular system is tunable by changing the electrode distance. Shortening the electrode separation can enhance the NDC effect which is attributed to the possible increase of coupling between the two branches of TADHA molecule. (paper)

Rf-biasing of highly idealized plasmas

NARCIS (Netherlands)

Westermann, R.H.J.; Blauw, M.A.; Goedheer, W.J.; Sanden, van de M.C.M.; Schmidt, J.; Simek, M.; Pekarek, S.; Prukner, V.

2007-01-01

Remote plasmas, which are subjected to a radio-frequency (RF) biased surface, have been investigated theoretically and experimentally for decades. The relation between the complex power (DC) voltage characteristics, the ion energy distribution and control losses of the ion bombardment are of

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

NARCIS (Netherlands)

Profijt, H. B.; M. C. M. van de Sanden,; Kessele, W. M. M.

2013-01-01

Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been

Enhanced Self-Biased Magnetoelectric Coupling in Laser-Annealed Pb(Zr,Ti)O3 Thick Film Deposited on Ni Foil.

Science.gov (United States)

Palneedi, Haribabu; Maurya, Deepam; Geng, Liwei D; Song, Hyun-Cheol; Hwang, Geon-Tae; Peddigari, Mahesh; Annapureddy, Venkateswarlu; Song, Kyung; Oh, Yoon Seok; Yang, Su-Chul; Wang, Yu U; Priya, Shashank; Ryu, Jungho

2018-04-04

Enhanced and self-biased magnetoelectric (ME) coupling is demonstrated in a laminate heterostructure comprising 4 μm-thick Pb(Zr,Ti)O 3 (PZT) film deposited on 50 μm-thick flexible nickel (Ni) foil. A unique fabrication approach, combining room temperature deposition of PZT film by granule spray in vacuum (GSV) process and localized thermal treatment of the film by laser radiation, is utilized. This approach addresses the challenges in integrating ceramic films on metal substrates, which is often limited by the interfacial chemical reactions occurring at high processing temperatures. Laser-induced crystallinity improvement in the PZT thick film led to enhanced dielectric, ferroelectric, and magnetoelectric properties of the PZT/Ni composite. A high self-biased ME response on the order of 3.15 V/cm·Oe was obtained from the laser-annealed PZT/Ni film heterostructure. This value corresponds to a ∼2000% increment from the ME response (0.16 V/cm·Oe) measured from the as-deposited PZT/Ni sample. This result is also one of the highest reported values among similar ME composite systems. The tunability of self-biased ME coupling in PZT/Ni composite has been found to be related to the demagnetization field in Ni, strain mismatch between PZT and Ni, and flexural moment of the laminate structure. The phase-field model provides quantitative insight into these factors and illustrates their contributions toward the observed self-biased ME response. The results present a viable pathway toward designing and integrating ME components for a new generation of miniaturized tunable electronic devices.

Effects of Cognitive Bias Modification Training via Smartphones

Directory of Open Access Journals (Sweden)

Ranming Yang

2017-08-01

Full Text Available Background and Objectives: Negative cognitive biases have been linked to anxiety and mood problems. Accumulated data from laboratory studies show that positive and negative interpretation styles with accompanying changes in mood can be induced through cognitive bias modification (CBM paradigms. Despite the therapeutic potential of positive training effects, few studies have explored training paradigms administered via smartphones. The current study aimed to compare the effectiveness of three different types of training programmes (cognitive bias modification-attention, CBM-A; cognitive bias modification-interpretation, CBM-I; attention and interpretation modification, AIM administered via smart-phones by using a control condition (CC.Methods:Seventy-six undergraduate participants with high social anxiety (Liebowitz Social Anxiety Scale, LSAS ≥ 30 were randomly assigned to four groups: CBM-A (n = 20, CBM-I (n = 20, AIM (n = 16, and CC (n = 20.Results: The results showed that the effects of CBM training, CBM-I training, or AIM training vs. CC for attention yielded no significant differences in dot-probe attention bias scores. The CBM-I group showed significantly less threat interpretation and more benign interpretation than the CC group on interpretation bias scores.Conclusions: The present results supported the feasibility of delivering CBM-I via smartphones, but the effectiveness of CBM-A and AIM training via smartphones was limited.

Nonequilibrium Kondo effect by the equilibrium numerical renormalization group method: The hybrid Anderson model subject to a finite spin bias

Science.gov (United States)

Fang, Tie-Feng; Guo, Ai-Min; Sun, Qing-Feng

2018-06-01

We investigate Kondo correlations in a quantum dot with normal and superconducting electrodes, where a spin bias voltage is applied across the device and the local interaction U is either attractive or repulsive. When the spin current is blockaded in the large-gap regime, this nonequilibrium strongly correlated problem maps into an equilibrium model solvable by the numerical renormalization group method. The Kondo spectra with characteristic splitting due to the nonequilibrium spin accumulation are thus obtained at high precision. It is shown that while the bias-induced decoherence of the spin Kondo effect is partially compensated by the superconductivity, the charge Kondo effect is enhanced out of equilibrium and undergoes an additional splitting by the superconducting proximity effect, yielding four Kondo peaks in the local spectral density. In the charge Kondo regime, we find a universal scaling of charge conductance in this hybrid device under different spin biases. The universal conductance as a function of the coupling to the superconducting lead is peaked at and hence directly measures the Kondo temperature. Our results are of direct relevance to recent experiments realizing a negative-U charge Kondo effect in hybrid oxide quantum dots [Nat. Commun. 8, 395 (2017), 10.1038/s41467-017-00495-7].

Improvement of the detection limits in radio-frequency-powered glow discharge optical emission spectrometry associated with bias-current conduction method; Jiko bias denryu donyuho ni yoru koshuha glow hoden hakko bunseki ni okeru kenshutsu genkai no kaizen

Energy Technology Data Exchange (ETDEWEB)

Wagatsuma, K. [Tohoku University, Sendai (Japan). Research Institute for Materials

1999-01-01

A d.c. bias current driven by the self-bias voltage which is conducted through the r.f.-powered glow discharge plasma varies the emission characteristics drastically, leading to improvement of the detection power in the optical emission spectrometry. By conducting the bias currents of 20-30 mA, the emission intensities of the atomic resonance lines were 10-20 times larger than those obtained with conventional r.t.- powered plasmas. The detection limits for determination of alloyed elements in the re-based binary alloy samples were estimated to be l.6 x 10{sup -3}% Cr for CrI 425.43nm, 7 x 10{sup -4}% Mn for MnI 403.10nm, 1.9>10{sup -3}% Cu for CuI 327.40nm, 1.1 x 10{sup -3}% Al for AlI 396.16nm, and 6.6 x 10{sup -3}% Ni for NiI 352.45 nm. (author)

Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor

International Nuclear Information System (INIS)

Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Lin, Kun-Yao; Wu, Yi-Chun; Huang, Shih-Feng; Chiang, Cheng-Lung; Chen, Po-Lin; Lai, Tzu-Chieh; Lo, Chang-Cheng; Lien, Alan

2014-01-01

This study investigates the impact of gate bias stress with and without light illumination in a-Si:H thin film transistors. It has been observed that the I–V curve shifts toward the positive direction after negative and positive gate bias stress due to interface state creation at the gate dielectric. However, this study found that threshold voltages shift negatively and that the transconductance curve maxima are anomalously degraded under illuminated positive gate bias stress. In addition, threshold voltages shift positively under illuminated negative gate bias stress. These degradation behaviors can be ascribed to charge trapping in the passivation layer dominating degradation instability and are verified by a double gate a-Si:H device. - Highlights: • There is abnormal V T shift induced by illuminated gate bias stress in a-Si:H thin film transistors. • Electron–hole pair is generated via trap-assisted photoexcitation. • Abnormal transconductance hump is induced by the leakage current from back channel. • Charge trapping in the passivation layer is likely due to the fact that a constant voltage has been applied to the top gate

Investigating vulnerability to eating disorders: biases in emotional processing.

Science.gov (United States)

Pringle, A; Harmer, C J; Cooper, M J

2010-04-01

Biases in emotional processing and cognitions about the self are thought to play a role in the maintenance of eating disorders (EDs). However, little is known about whether these difficulties exist pre-morbidly and how they might contribute to risk. Female dieters (n=82) completed a battery of tasks designed to assess the processing of social cues (facial emotion recognition), cognitions about the self [Self-Schema Processing Task (SSPT)] and ED-specific cognitions about eating, weight and shape (emotional Stroop). The 26-item Eating Attitudes Test (EAT-26; Garner et al. 1982) was used to assess subclinical ED symptoms; this was used as an index of vulnerability within this at-risk group. Regression analyses showed that biases in the processing of both neutral and angry faces were predictive of our measure of vulnerability (EAT-26). In the self-schema task, biases in the processing of negative self descriptors previously found to be common in EDs predicted vulnerability. Biases in the processing of shape-related words on the Stroop task were also predictive; however, these biases were more important in dieters who also displayed biases in the self-schema task. We were also able to demonstrate that these biases are specific and separable from more general negative biases that could be attributed to depressive symptoms. These results suggest that specific biases in the processing of social cues, cognitions about the self, and also about eating, weight and shape information, may be important in understanding risk and preventing relapse in EDs.

Regional differences in the validity of self-reported use of health care in Belgium: selection versus reporting bias

Directory of Open Access Journals (Sweden)

J. Van der Heyden

2016-08-01

Full Text Available Abstract Background The Health Care Module of the European Health Interview Survey (EHIS is aimed to obtain comparable information on the use of inpatient and ambulatory care in all EU member states. In this study we assessed the validity of self-reported information on the use of health care, collected through this instrument, in the Belgian Health Interview Survey (BHIS, and explored the impact of selection and reporting bias on the validity of regional differences in health care use observed in the BHIS. Methods To assess reporting bias, self-reported BHIS 2008 data were linked with register-based data from the Belgian compulsory health insurance (BCHI. The latter were compared with similar estimates from a random sample of the BCHI to investigate the selection bias. Outcome indicators included the prevalence of a contact with a GP, specialist, dentist and a physiotherapist, as well as inpatient and day patient hospitalisation. The validity of the estimates and the regional differences were explored through measures of agreement and logistic regression analyses. Results Validity of self-reported health care use varies by type of health service and is more affected by reporting than by selection bias. Compared to health insurance estimates, self-reported results underestimate the percentage of people with a specialist contact in the past year (50.5 % versus 65.0 % and a day patient hospitalisation (7.8 % versus 13.9 %. Inversely, survey results overestimated the percentage of people having visited a dentist in the past year: 58.3 % versus 48.6 %. The best concordance was obtained for an inpatient hospitalisation (kappa 0.75. Survey data overestimate the higher prevalence of a contact with a specialist [OR 1.51 (95 % CI 1.33–1.72 for self-report and 1.08 (95 % CI 1.05–1.15 for register] and underestimate the lower prevalence of a contact with a GP [ORs 0.59 (95 % CI 0.51–0.70 and 0.41 (95 % CI 0.39–0.42 respectively] in

Pulsed total dose damage effect experimental study on EPROM

International Nuclear Information System (INIS)

Luo Yinhong; Yao Zhibin; Zhang Fengqi; Guo Hongxia; Zhang Keying; Wang Yuanming; He Baoping

2011-01-01

Nowadays, memory radiation effect study mainly focus on functionality measurement. Measurable parameters is few in china. According to the present situation, threshold voltage testing method was presented on floating gate EPROM memory. Experimental study of pulsed total dose effect on EPROM threshold voltage was carried out. Damage mechanism was analysed The experiment results showed that memory cell threshold voltage negative shift was caused by pulsed total dose, memory cell threshold voltage shift is basically coincident under steady bias supply and no bias supply. (authors)

Origin of the transition voltage in gold–vacuum–gold atomic junctions

International Nuclear Information System (INIS)

Wu Kunlin; Bai Meilin; Hou Shimin; Sanvito, Stefano

2013-01-01

The origin and the distance dependence of the transition voltage of gold–vacuum–gold junctions are investigated by employing first-principles quantum transport simulations. Our calculations show that atomic protrusions always exist on the electrode surface of gold–vacuum–gold junctions fabricated using the mechanically controllable break junction (MCBJ) method. The transition voltage of these gold–vacuum–gold junctions with atomically sharp electrodes is determined by the local density of states (LDOS) of the apex gold atom on the electrode surface rather than by the vacuum barrier shape. More specifically, the absolute value of the transition voltage roughly equals the rising edge of the LDOS peak contributed by the 6p atomic orbitals of the gold atoms protruding from the electrode surface, whose local Fermi level is shifted downwards when a bias voltage is applied. Since the LDOS of the apex gold atom depends strongly on the exact shape of the electrode, the transition voltage is sensitive to the variation of the atomic configuration of the junction. For asymmetric junctions, the transition voltage may also change significantly depending on the bias polarity. Considering that the occurrence of the transition voltage requires the electrode distance to be larger than a critical value, the interaction between the two electrodes is actually rather weak. Consequently, the LDOS of the apex gold atom is mainly determined by its local atomic configuration and the transition voltage only depends weakly on the electrode distance as observed in the MCBJ experiments. (paper)

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

Science.gov (United States)

Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

2018-04-01

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

Social inference and social anxiety: evidence of a fear-congruent self-referential learning bias.

Science.gov (United States)

Button, Katherine S; Browning, Michael; Munafò, Marcus R; Lewis, Glyn

2012-12-01

Fears of negative evaluation characterise social anxiety, and preferential processing of fear-relevant information is implicated in maintaining symptoms. Little is known, however, about the relationship between social anxiety and the process of inferring negative evaluation. The ability to use social information to learn what others think about one, referred to here as self-referential learning, is fundamental for effective social interaction. The aim of this research was to examine whether social anxiety is associated with self-referential learning. 102 Females with either high (n = 52) or low (n = 50) self-reported social anxiety completed a novel probabilistic social learning task. Using trial and error, the task required participants to learn two self-referential rules, 'I am liked' and 'I am disliked'. Participants across the sample were better at learning the positive rule 'I am liked' than the negative rule 'I am disliked', β = -6.4, 95% CI [-8.0, -4.7], p learning positive self-referential information was strongest in the lowest socially anxious and was abolished in the most symptomatic participants. Relative to the low group, the high anxiety group were better at learning they were disliked and worse at learning they were liked, social anxiety by rule interaction β = 3.6; 95% CI [+0.3, +7.0], p = 0.03. The specificity of the results to self-referential processing requires further research. Healthy individuals show a robust preference for learning that they are liked relative to disliked. This positive self-referential bias is reduced in social anxiety in a way that would be expected to exacerbate anxiety symptoms. Copyright © 2012 Elsevier Ltd. All rights reserved.

Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

International Nuclear Information System (INIS)

Kim, N.; Cheong, Y.; Song, W.

2010-01-01

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

Effectiveness of reactive oral cholera vaccination in rural Haiti: a case-control study and bias-indicator analysis.

Science.gov (United States)

Ivers, Louise C; Hilaire, Isabelle J; Teng, Jessica E; Almazor, Charles P; Jerome, J Gregory; Ternier, Ralph; Boncy, Jacques; Buteau, Josiane; Murray, Megan B; Harris, Jason B; Franke, Molly F

2015-03-01

Between April and June, 2012, a reactive cholera vaccination campaign was done in Haiti with an oral inactivated bivalent whole-cell vaccine. We aimed to assess the effectiveness of the vaccine in a case-control study and to assess the likelihood of bias in that study in a bias-indicator study. Residents of Bocozel or Grand Saline who were eligible for the vaccination campaign (ie, age ≥12 months, not pregnant, and living in the region at the time of the vaccine campaign) were included. In the primary case-control study, cases had acute watery diarrhoea, sought treatment at one of three participating cholera treatment units, and had a stool sample positive for cholera by culture. For each case, four control individuals who did not seek treatment for acute watery diarrhoea were matched by location of residence, enrolment time (within 2 weeks of the case), and age (1-4 years, 5-15 years, and >15 years). Cases in the bias-indicator study were individuals with acute watery diarrhoea with a negative stool sample for cholera. Controls were selected in the same manner as in the primary case-control study. Trained staff used standard laboratory procedures to do rapid tests and stool cultures from study cases. Participants were interviewed to collect data on sociodemographic characteristics, risk factors for cholera, and self-reported vaccination. Data were analysed by conditional logistic regression, adjusting for matching factors. From Oct 24, 2012, to March 9, 2014, 114 eligible individuals presented with acute watery diarrhoea and were enrolled, 25 of whom were subsequently excluded. 47 participants were analysed as cases in the vaccine effectiveness case-control study and 42 as cases in the bias-indicator study. 33 (70%) of 47 cholera cases self-reported vaccination versus 167 (89%) of 188 controls (vaccine effectiveness 63%, 95% CI 8-85). 27 (57%) of 47 cases had certified vaccination versus 147 (78%) of 188 controls (vaccine effectiveness 58%, 13-80). Neither self

On guided circumferential waves in soft electroactive tubes under radially inhomogeneous biasing fields

Science.gov (United States)

Wu, Bin; Su, Yipin; Chen, Weiqiu; Zhang, Chuanzeng

2017-02-01

Soft electroactive (EA) tube actuators and many other cylindrical devices have been proposed recently in literature, which show great advantages over those made from conventional hard solid materials. However, their practical applications may be limited because these soft EA devices are prone to various failure modes. In this paper, we present an analysis of the guided circumferential elastic waves in soft EA tube actuators, which has potential applications in the in-situ nondestructive evaluation (NDE) or online structural health monitoring (SHM) to detect structural defects or fatigue cracks in soft EA tube actuators and in the self-sensing of soft EA tube actuators based on the concept of guided circumferential elastic waves. Both circumferential SH and Lamb-type waves in an incompressible soft EA cylindrical tube under inhomogeneous biasing fields are considered. The biasing fields, induced by the application of an electric voltage difference to the electrodes on the inner and outer cylindrical surfaces of the EA tube in addition to an axial pre-stretch, are inhomogeneous in the radial direction. Dorfmann and Ogden's theory of nonlinear electroelasticity and the associated linear theory for small incremental motion constitute the basis of our analysis. By means of the state-space formalism for the incremental wave motion along with the approximate laminate technique, dispersion relations are derived in a particularly efficient way. For a neo-Hookean ideal dielectric model, the proposed approach is first validated numerically. Numerical examples are then given to show that the guided circumferential wave propagation characteristics are significantly affected by the inhomogeneous biasing fields and the geometrical parameters. Some particular phenomena such as the frequency veering and the nonlinear dependence of the phase velocity on the radial electric voltage are discussed. Our numerical findings demonstrate that it is feasible to use guided circumferential

A Floquet-Green's function approach to mesoscopic transport under ac bias

International Nuclear Information System (INIS)

Wu, B H; Cao, J C

2008-01-01

The current response of a mesoscopic system under a periodic ac bias is investigated by combining the Floquet theorem and the nonequilibrium Green's function method. The band structure of the lead under ac bias is fully taken into account by using appropriate self-energies in an enlarged Floquet space. Both the retarded and lesser Green's functions are obtained in the Floquet basis to account for the interference and interaction effects. In addition to the external ac bias, the time-varying Coulomb interaction, which is treated at the self-consistent Hartree-Fock level, provides another internal ac field. The numerical results show that the time-varying Coulomb field yields decoherence and reduces the ringing behavior of the current response to a harmonic bias

Critical voltage effects in electron channeling patterns

International Nuclear Information System (INIS)

Farrow, R.C.

1984-01-01

Electron channeling patterns were used to study critical voltage effects in the metals molybdenum and tungsten. The purpose was to characterize both theoretically and experimentally how a critical voltage will affect the channeling pattern line shapes. The study focused on the second order critical voltage that results from the degeneracy between the Bloch wave states of the (110) and (220) reflections. Theoretical (110) series electron channeling pattern line profiles were calculated using the dynamical theory of Hirsch and Humphreys (1970). A 10 beam dynamical electron diffraction calculation was performed (using complex Fourier lattice potentials) to generate Bloch wave coefficients, excitation amplitudes, and absorption coefficients needed for determining backscattering coefficients and subsequent backscattered electron intensities. The theoretical model is applicable to electron diffraction at all energies since no high energy approximation or perturbation method was used

10-bit rapid single flux quantum digital-to-analog converter for ac voltage standard

International Nuclear Information System (INIS)

Maezawa, M; Hirayama, F

2008-01-01

Digital-to-analog (D/A) converters based on rapid single flux quantum (RSFQ) technology are under development for ac voltage standard applications. We present design and test results on a prototype 10-bit version integrated on a single chip. The 10-bit chip includes over 6000 Josephson junctions and consumes a bias current exceeding 1 A. To reduce the effects of the high bias current on circuit operation, a custom design method was employed in part and large circuit blocks were divided into smaller ones. The 10-bit chips were fabricated and tested at low speed. The test results suggested that our design approach could manage large bias currents on the order of 1 A per chip

Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

Science.gov (United States)

Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

2016-04-01

Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

Self-monitoring and feedback : A new attempt to find the main cause of lexical bias in phonological speech errors

NARCIS (Netherlands)

Nooteboom, S.G.; Quené, H.

2008-01-01

This paper reports two experiments designed to investigate whether lexical bias in phonological speech errors is caused by immediate feedback of activation, by self-monitoring of inner speech, or by both. The experiments test a number of predictions derived from a model of self-monitoring of inner

Low voltage stress-induced leakage current and traps in ultrathin oxide (1.2 2.5 nm) after constant voltage stresses

Science.gov (United States)

Petit, C.; Zander, D.

2007-10-01

It has been shown that the low voltage gate current in ultrathin oxide metal-oxide-semiconductor devices is very sensitive to electrical stresses. Therefore, it can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements to be used. In this work, we present a study on n-MOSCAP devices at negative gate bias in the direct tunneling (DT) regime. If the low voltage stress-induced leakage current (LVSILC) depends strongly on the low sense voltages, it also depends strongly on the stress voltage magnitude. We show that two LVSILC peaks appear as a function of the sense voltage in the LVSILC region and that their magnitude, one compared to the other, depends strongly on the stress voltage magnitude. One is larger than the other at low stress voltage and smaller at high stress voltage. From our experimental results, different conduction mechanisms are analyzed. To explain LVSILC variations, we propose a model of the conduction through the ultrathin gate oxide based on two distinctly different trap-assisted tunneling mechanisms: inelastic of gate electron (INE) and trap-assisted electron (ETAT).

Current and Voltage Mode Multiphase Sinusoidal Oscillators Using CBTAs

Directory of Open Access Journals (Sweden)

M. Sagbas

2013-04-01

Full Text Available Current-mode (CM and voltage-mode (VM multiphase sinusoidal oscillator (MSO structures using current backward transconductance amplifier (CBTA are proposed. The proposed oscillators can generate n current or voltage signals (n being even or odd equally spaced in phase. n+1 CBTAs, n grounded capacitors and a grounded resistor are used for nth-state oscillator. The oscillation frequency can be independently controlled through transconductance (gm of the CBTAs which are adjustable via their bias currents. The effects caused by the non-ideality of the CBTA on the oscillation frequency and condition have been analyzed. The performance of the proposed circuits is demonstrated on third-stage and fifth-stage MSOs by using PSPICE simulations based on the 0.25 µm TSMC level-7 CMOS technology parameters.

A fatigue test method for Pb(Zr,Ti)O3 thin films by using MEMS-based self-sensitive piezoelectric microcantilevers

Science.gov (United States)

Kobayashi, T.; Maeda, R.; Itoh, T.

2008-11-01

In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 Vpp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 107 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method.

A fatigue test method for Pb(Zr,Ti)O3 thin films by using MEMS-based self-sensitive piezoelectric microcantilevers

International Nuclear Information System (INIS)

Kobayashi, T; Maeda, R; Itoh, T

2008-01-01

In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 V pp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 10 7 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method

Analytical modeling of threshold voltage for Cylindrical Gate All Around (CGAA MOSFET using center potential

Directory of Open Access Journals (Sweden)

K.P. Pradhan

2015-12-01

Full Text Available In this paper, an analytical threshold voltage model is proposed for a cylindrical gate-all-around (CGAA MOSFET by solving the 2-D Poisson’s equation in the cylindrical coordinate system. A comparison is made for both the center and the surface potential model of CGAA MOSFET. This paper claims that the calculation of threshold voltage using center potential is more accurate rather than the calculation from surface potential. The effects of the device parameters like the drain bias (VDS, oxide thickness (tox, channel thickness (r, etc., on the threshold voltage are also studied in this paper. The model is verified with 3D numerical device simulator Sentaurus from Synopsys Inc.

Effect of annealing on the second harmonic amplitude of Giant Magneto-Impedance (GMI) voltage of a Co-Fe-Si-B amorphous wire

Energy Technology Data Exchange (ETDEWEB)

Pal, S.K. [National Metallurgical Laboratory, Jamshedpur 831007 (India)], E-mail: skp@nmlindia.org; Panda, A.K.; Mitra, A. [National Metallurgical Laboratory, Jamshedpur 831007 (India)

2008-02-15

Second harmonic amplitude (V{sub 2f}) of Giant Magneto-Impedance (GMI) voltage of (Fe{sub 6}Co{sub 94}){sub 72.5}Si{sub 12.5}B{sub 15} amorphous wires has been studied systematically for as-cast and Joule-heated states. Joule heating was carried out at current densities (J) of 20-40 A/mm{sup 2} for a period of 1-300 min. The amplitude of the second harmonic voltage (V{sub 2f}) initially increased with J, attained maximum and then decreased. The maximum amplitude of V{sub 2f} was observed for the sample annealed at J=25 A/mm{sup 2} for 5 min. The second harmonic peak shifted towards the higher field side with the increase of annealing current density and annealing period (t{sub p}). Few-fold increase in the amplitude of the second harmonic voltage (V{sub 2f}) was observed due to the presence of a small dc bias current (I{sub b}) of amplitude 1 mA. The asymmetry in V{sub 2f} was also observed in a Joule-heated sample. The observed asymmetry has been correlated with the bias field generated between the surface crystallized layer and the amorphous core. A small bias current of amplitude of 1 mA was applied along the direction of the applied field to minimize the asymmetry.

RF plasma-driven hydrogen permeation through a biased iron membrane

International Nuclear Information System (INIS)

Banno, T.; Waelbroeck, F.; Winter, J.

1984-01-01

The steady-state RF plasma-driven hydrogen permeation through an electrically biased iron membrane has been investigated as a function of the bias potential Vsub(M) for membrane temperatures in the range of 150-400 0 C. Vsub(M) has been gradually increased positively from the floating potential of the membrane. The permeation flux decreases when Vsub(M) increases at low voltages: positive hydrogen ions are repelled. The membrane temperature does not influence this effect measurably. The permeation flux starts to increase when Vsub(M) is raised higher, i.e. when energetic electrons strike the surface. This phenomenon shows a pronounced temperature dependence - the enhancement is largest for the lowest temperatures. The effect is interpreted in terms of an electron-induced dissociation of hydrogen molecules on the membrane surface. (orig.)