WorldWideScience

Sample records for self-bias voltage effects

  1. Effect of self-bias voltage on the wettability, chemical functionality and nanomechanical properties of hexamethyldisiloxane films

    Energy Technology Data Exchange (ETDEWEB)

    Albuquerque, M.D.F. [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil); Santos, E. [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil); Faculty of Civil Engineering, University Center of Volta Redonda (UniFOA), Volta Redonda, RJ (Brazil); Perdone, R.R.T. [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil); Simao, R.A., E-mail: renata@metalmat.ufrj.br [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil)

    2014-08-01

    Copper and silicon substrates were coated by chemical vapor deposition using hexamethyldisiloxane (HMDSO) as the precursor gas. Substrates were placed both at the anode and cathode of a glow discharge reactor, and films were deposited using different self-bias voltages. This study focuses on comparing the differences between the hydrophilicity, polymeric character, chemical structure and nanomechanical properties of HMDSO films produced at the cathode and anode of the reactor at different self-bias voltages. Fourier transform infrared spectroscopy and Raman confocal spectroscopy indicated a significant increase in the content of organic groups when films were deposited at the anode. Analyzing the nanomechanical properties of the cathode and anode films indicated that the penetration depth was higher for samples prepared at the cathode (lower hardness) compared with the samples produced at the anode. The measured contact angles indicated that all samples became hydrophobic with water contact angles close to 100°; however, a different lyophobic character was observed when diiodomethane was used. Films produced at the anode with diiodomethane exhibited higher contact angles than did films produced at the cathode. - Highlights: • Hexamethyldisiloxane (HMDSO) films deposited by CVD on Si and Cu substrates • HMDSO films produced at the anode have greater content of organic SiO{sub 4} groups. • Films produced at the anode are harder than those deposited at the cathode. • HMDSO films produced at the cathode exhibited higher elastic recovery. • All films are hydrophobic (θ close to 100°)

  2. Effect of self-bias voltage on the wettability, chemical functionality and nanomechanical properties of hexamethyldisiloxane films

    International Nuclear Information System (INIS)

    Albuquerque, M.D.F.; Santos, E.; Perdone, R.R.T.; Simao, R.A.

    2014-01-01

    Copper and silicon substrates were coated by chemical vapor deposition using hexamethyldisiloxane (HMDSO) as the precursor gas. Substrates were placed both at the anode and cathode of a glow discharge reactor, and films were deposited using different self-bias voltages. This study focuses on comparing the differences between the hydrophilicity, polymeric character, chemical structure and nanomechanical properties of HMDSO films produced at the cathode and anode of the reactor at different self-bias voltages. Fourier transform infrared spectroscopy and Raman confocal spectroscopy indicated a significant increase in the content of organic groups when films were deposited at the anode. Analyzing the nanomechanical properties of the cathode and anode films indicated that the penetration depth was higher for samples prepared at the cathode (lower hardness) compared with the samples produced at the anode. The measured contact angles indicated that all samples became hydrophobic with water contact angles close to 100°; however, a different lyophobic character was observed when diiodomethane was used. Films produced at the anode with diiodomethane exhibited higher contact angles than did films produced at the cathode. - Highlights: • Hexamethyldisiloxane (HMDSO) films deposited by CVD on Si and Cu substrates • HMDSO films produced at the anode have greater content of organic SiO 4 groups. • Films produced at the anode are harder than those deposited at the cathode. • HMDSO films produced at the cathode exhibited higher elastic recovery. • All films are hydrophobic (θ close to 100°)

  3. A Self-Biased Active Voltage Doubler for Energy Harvesting Systems

    KAUST Repository

    Tayyab, Umais

    2017-12-03

    An active voltage doubler utilizing a single supply op-amp for energy harvesting system is presented. The proposed doubler is used for rectification process to achieve both acceptably high power conversion efficiency (PCE) and large rectified DC voltage. The incorporated op-amp is self-biased, meaning no external supply is needed but rather it uses part of the harvested energy for its biasing. The proposed active doubler achieves maximum power conversion efficiency (PCE) of 61.7% for a 200 Hz sinusoidal input of 0.8 V for a 20 K load resistor. This efficiency is 2 times more when compared with the passive voltage doubler. The rectified DC voltage is almost 2 times more than conventional passive doubler. The relation between PCE and the load resistor is also presented. The proposed active voltage doubler is designed and simulated in LF 0.15 μm CMOS process technology using Cadence virtuoso tool.

  4. Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

    Science.gov (United States)

    Ho, Teck Seng; Charles, Christine; Boswell, Rod

    2018-05-01

    In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

  5. The effect of radio-frequency self bias on ion acceleration in expanding argon plasmas in helicon sources

    Science.gov (United States)

    Wiebold, Matthew D.

    Time-averaged plasma potential differences up to ˜ 165 V over several hundred Debye lengths are observed in low pressure (pn floating potential for argon (Vp ≈ 5kTe/e). In the capacitive mode, the ion acceleration is not well described by an ambipolar relation. The accelerated population decay is consistent with that predicted by charge-exchange collisions. Grounding the upstream endplate increases the self-bias voltage compared to a floating endplate. In the inductive and helicon modes, the ion acceleration more closely follows an ambipolar relation, a result of decreased capacitive coupling due to the decreased RF skin depth. The scaling of the potential gradient with the argon flow rate, magnetic field and RF power are investigated, with the highest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees well with that predicted for RF sheaths. Use of the self-bias effect in a plasma thruster is explored, possibly for a low thrust, high specific impulse mode in a multi-mode helicon thruster. This work could also explain similar potential gradients in expanding helicon plasmas that are ascribed to double layer formation in the literature.

  6. Note: Self-biased voltage to suppress secondary electrons by a ZnO varistor in a compact pulsed neutron generator

    Science.gov (United States)

    Yang, Z.; Li, X.; Li, J.; Long, J. D.; Lan, C. H.; Wang, T.; Dong, P.; He, J. L.

    2017-03-01

    A large amount of back streaming electrons will bring about a part of current drain on power supply, cause sparking or high-voltage breakdowns, and affect the neutron yield and waveform for a compact sealed-tube pulsed neutron generator. A novel idea which uses a ZnO varistor to provide a constant self-biased voltage to suppress the secondary electrons is introduced. The I-V curve for the ZnO varistor was measured in the experiment. The effects of suppressing the secondary electrons were investigated using a ZnO varistor, linear resistors, and an independent power supply, respectively. The results show that the secondary electrons are suppressed effectively by the compact ZnO varistor, while not increasing the size and the component of the device. It is a promising design for compact sealed-tube neutron generators.

  7. The effect of dust on electron heating and dc self-bias in hydrogen diluted silane discharges

    International Nuclear Information System (INIS)

    Schüngel, E; Mohr, S; Iwashita, S; Schulze, J; Czarnetzki, U

    2013-01-01

    In capacitive hydrogen diluted silane discharges the formation of dust affects plasma processes used, e.g. for thin film solar cell manufacturing. Thus, a basic understanding of the interaction between plasma and dust is required to optimize such processes. We investigate a highly diluted silane discharge experimentally using phase-resolved optical emission spectroscopy to study the electron dynamics, laser light scattering on the dust particles to relate the electron dynamics with the spatial distribution of dust, and current and voltage measurements to characterize the electrical symmetry of the discharge via the dc self-bias. The measurements are performed in single and dual frequency discharges. A mode transition from the α-mode to a bulk drift mode (Ω-mode) is found, if the amount of silane and, thereby, the amount of dust and negative ions is increased. By controlling the electrode temperatures, the dust can be distributed asymmetrically between the electrodes via the thermophoretic force. This affects both the electron heating and the discharge symmetry, i.e. a dc self-bias develops in a single frequency discharge. Using the Electrical Asymmetry Effect (EAE), the dc self-bias can be controlled in dual frequency discharges via the phase angle between the two applied frequencies. The Ω-mode is observed for all phase angles and is explained by a simple model of the electron power dissipation. The model shows that the mode transition is characterized by a phase shift between the applied voltage and the electron conduction current, and that the plasma density profile can be estimated using the measured phase shift. The control interval of the dc self-bias obtained using the EAE will be shifted, if an asymmetric dust distribution is present. However, the width of the interval remains unchanged, because the dust distribution is hardly affected by the phase angle. (paper)

  8. A Self-Biased Active Voltage Doubler for Energy Harvesting Systems

    KAUST Repository

    Tayyab, Umais; Alzaher, Hussain A.

    2017-01-01

    An active voltage doubler utilizing a single supply op-amp for energy harvesting system is presented. The proposed doubler is used for rectification process to achieve both acceptably high power conversion efficiency (PCE) and large rectified DC

  9. Generation of pure spin currents via spin Seebeck effect in self-biased hexagonal ferrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Peng; Ellsworth, David; Chang, Houchen; Janantha, Praveen; Richardson, Daniel; Phillips, Preston; Vijayasarathy, Tarah; Wu, Mingzhong, E-mail: mwu@lamar.colostate.edu [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States); Shah, Faisal [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2014-12-15

    Light-induced generation of pure spin currents in a Pt(2.5 nm)/BaFe{sub 12}O{sub 19}(1.2 μm)/sapphire(0.5 mm) structure is reported. The BaFe{sub 12}O{sub 19} film had strong in-plane uniaxial anisotropy and was therefore self-biased. Upon exposure to light, a temperature difference (ΔT) was established across the BaFe{sub 12}O{sub 19} thickness that gave rise to a pure spin current in the Pt via the spin Seebeck effect. Via the inverse spin Hall effect, the spin current produced an electric voltage across one of the Pt lateral dimensions. The voltage varied with time in the same manner as ΔT and flipped its sign when the magnetization in BaFe{sub 12}O{sub 19} was reversed.

  10. Ion acceleration in a helicon source due to the self-bias effect

    International Nuclear Information System (INIS)

    Wiebold, Matt; Sung, Yung-Ta; Scharer, John E.

    2012-01-01

    Time-averaged plasma potential differences up to 165 V over several hundred Debye lengths are observed in low pressure (p n i ≈ 7 kT e in some cases. RF power up to 500 W at 13.56 MHz is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field, adjustable up to 1 kG. A retarding potential analyzer (RPA) measures the ion energy distribution function (IEDF) and a swept emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in density as RF power is increased. In the capacitive (E) mode, large fluctuations of the plasma potential (V p-p ≳140V, V p-p /V p ≈150%) exist at the RF frequency and its harmonics. The more mobile electrons can easily respond to RF-timescale gradients in the plasma potential whereas the inertially constrained ions cannot, leading to an initial flux imbalance and formation of a self-bias voltage between the source and expansion chambers. In the capacitive mode, the ion acceleration is not well described by an ambipolar relation, while in the inductive and helicon modes the ion acceleration more closely follows an ambipolar relation. The scaling of the potential gradient with the argon flow rate and RF power are investigated, with the largest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees with that predicted for RF self-bias at a wall. Rapid fluctuations in the plasma potential result in a time-dependent axial electron flux that acts to “neutralize” the accelerated ion population, resulting in a zero net time-averaged current through the acceleration region when an insulating upstream boundary condition is enforced. Grounding the upstream endplate increases the self-bias voltage compared to a floating endplate.

  11. Ion acceleration in a helicon source due to the self-bias effect

    Energy Technology Data Exchange (ETDEWEB)

    Wiebold, Matt; Sung, Yung-Ta; Scharer, John E. [University of Wisconsin-Madison, Electrical and Computer Engineering, Madison, Wisconsin 53706 (United States)

    2012-05-15

    Time-averaged plasma potential differences up to 165 V over several hundred Debye lengths are observed in low pressure (p{sub n} < 1 mTorr) expanding argon plasmas in the Madison Helicon eXperiment (MadHeX). The potential gradient leads to ion acceleration greater than that predicted by ambipolar expansion, exceeding E{sub i} Almost-Equal-To 7 kT{sub e} in some cases. RF power up to 500 W at 13.56 MHz is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field, adjustable up to 1 kG. A retarding potential analyzer (RPA) measures the ion energy distribution function (IEDF) and a swept emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in density as RF power is increased. In the capacitive (E) mode, large fluctuations of the plasma potential (V{sub p-p} Greater-Than-Or-Equivalent-To 140V, V{sub p-p}/V{sub p} Almost-Equal-To 150%) exist at the RF frequency and its harmonics. The more mobile electrons can easily respond to RF-timescale gradients in the plasma potential whereas the inertially constrained ions cannot, leading to an initial flux imbalance and formation of a self-bias voltage between the source and expansion chambers. In the capacitive mode, the ion acceleration is not well described by an ambipolar relation, while in the inductive and helicon modes the ion acceleration more closely follows an ambipolar relation. The scaling of the potential gradient with the argon flow rate and RF power are investigated, with the largest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees with that predicted for RF self-bias at a wall. Rapid fluctuations in the plasma potential result in a time-dependent axial electron flux that acts to 'neutralize' the accelerated ion

  12. Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device.

    Science.gov (United States)

    Khan, Muhammad Atif; Rathi, Servin; Park, Jinwoo; Lim, Dongsuk; Lee, Yoontae; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

    2017-08-16

    The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS 2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 10 3 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS 2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.

  13. Effect of driving voltages in dual capacitively coupled radio frequency plasma: A study by nonlinear global model

    International Nuclear Information System (INIS)

    Bora, B.

    2015-01-01

    On the basis of nonlinear global model, a dual frequency capacitively coupled radio frequency plasma driven by 13.56 MHz and 27.12 MHz has been studied to investigate the influences of driving voltages on the generation of dc self-bias and plasma heating. Fluid equations for the ions inside the plasma sheath have been considered to determine the voltage-charge relations of the plasma sheath. Geometrically symmetric as well as asymmetric cases with finite geometrical asymmetry of 1.2 (ratio of electrodes area) have been considered to make the study more reasonable to experiment. The electrical asymmetry effect (EAE) and finite geometrical asymmetry is found to work differently in controlling the dc self-bias. The amount of EAE has been primarily controlled by the phase angle between the two consecutive harmonics waveforms. The incorporation of the finite geometrical asymmetry in the calculations shift the dc self-bias towards negative polarity direction while increasing the amount of EAE is found to increase the dc self-bias in either direction. For phase angle between the two waveforms ϕ = 0 and ϕ = π/2, the amount of EAE increases significantly with increasing the low frequency voltage, whereas no such increase in the amount of EAE is found with increasing high frequency voltage. In contrast to the geometrically symmetric case, where the variation of the dc self-bias with driving voltages for phase angle ϕ = 0 and π/2 are just opposite in polarity, the variation for the geometrically asymmetric case is different for ϕ = 0 and π/2. In asymmetric case, for ϕ = 0, the dc self-bias increases towards the negative direction with increasing both the low and high frequency voltages, but for the ϕ = π/2, the dc-self bias is increased towards positive direction with increasing low frequency voltage while dc self-bias increases towards negative direction with increasing high frequency voltage

  14. Room temperature large self-biased magnetoelectric effect in non-lead based piezoelectric and magnetostrictive (0−3) particulate composite system

    International Nuclear Information System (INIS)

    Kumari, Mukesh; Prakash, Chandra; Chatterjee, Ratnamala

    2017-01-01

    In this work, room temperature magnetoelectric properties of (0−3) particulate composites of non lead based piezoelectric BNTKNNLTS [0.97(Bi 0.5 Na 0.5 TiO 3 )–0.03(K 0.47 Na 0.47 Li 0.06 Nb 0.74 Sb 0.06 Ta 0.2 O 3 ) and magnetostrictive CZFMO (Co 0.6 Zn 0.4 Fe 1.7 Mn 0.3 O 4 ) are presented. Composite samples of (1-x)(BNTKNNLTS)-x(CZFMO) , with x=0.1 and 0.5, are synthesized by solid state reaction route. X-ray diffraction confirms the single phase formation of parent phases and the presence of two phases in the composites. Similar sintering conditions of the two individual components lead to optimal ferroelectric and ferromagnetic properties in the composites. A large self-biased magnetoelectric (ME) coupling ~74 mV/cm.Oe for the sample with x=0.1 (measured in longitudinally magnetized-transversely polarized configuration) is observed at room temperature. - Highlights: • Modified BNT-CFO based (0−3) particulate composites have been synthesized. • Similar sintering conditions of two components lead to optimal multiferroicity. • A large self-biased ME coupling ~74 mV/cm. Oe is obtained at room temperature.

  15. Room temperature large self-biased magnetoelectric effect in non-lead based piezoelectric and magnetostrictive (0−3) particulate composite system

    Energy Technology Data Exchange (ETDEWEB)

    Kumari, Mukesh [Magnetics & Advanced Ceramics Laboratory, Indian Institute of Technology, Delhi-110016 India (India); Prakash, Chandra [Solid State Physics Laboratory Timarpur, Delhi-110054 India (India); Chatterjee, Ratnamala, E-mail: rmala@physics.iitd.ac.in [Magnetics & Advanced Ceramics Laboratory, Indian Institute of Technology, Delhi-110016 India (India)

    2017-05-01

    In this work, room temperature magnetoelectric properties of (0−3) particulate composites of non lead based piezoelectric BNTKNNLTS [0.97(Bi{sub 0.5}Na{sub 0.5}TiO{sub 3})–0.03(K{sub 0.47}Na{sub 0.47}Li{sub 0.06}Nb{sub 0.74}Sb{sub 0.06}Ta{sub 0.2}O{sub 3}) and magnetostrictive CZFMO (Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4}) are presented. Composite samples of (1-x)(BNTKNNLTS)-x(CZFMO){sub ,} with x=0.1 and 0.5, are synthesized by solid state reaction route. X-ray diffraction confirms the single phase formation of parent phases and the presence of two phases in the composites. Similar sintering conditions of the two individual components lead to optimal ferroelectric and ferromagnetic properties in the composites. A large self-biased magnetoelectric (ME) coupling ~74 mV/cm.Oe for the sample with x=0.1 (measured in longitudinally magnetized-transversely polarized configuration) is observed at room temperature. - Highlights: • Modified BNT-CFO based (0−3) particulate composites have been synthesized. • Similar sintering conditions of two components lead to optimal multiferroicity. • A large self-biased ME coupling ~74 mV/cm. Oe is obtained at room temperature.

  16. Stabilization of electron beam spot size by self bias potential

    International Nuclear Information System (INIS)

    Kwan, T.J.T.; Moir, D.C.; Snell, C.M.; Kang, M.

    1998-01-01

    In high resolution flash x-ray imaging technology the electric field developed between the electron beam and the converter target is large enough to draw ions from the target surface. The ions provide fractional neutralization and cause the electron beam to focus radially inward, and the focal point subsequently moves upstream due to the expansion of the ion column. A self-bias target concept is proposed and verified via computer simulation that the electron charge deposited on the target can generate an electric potential, which can effectively limit the ion motion and thereby stabilize the growth of the spot size. A target chamber using the self bias target concept was designed and tested in the Integrated Test Stand (ITS). The authors have obtained good agreement between computer simulation and experiment

  17. Piezo Voltage Controlled Planar Hall Effect Devices.

    Science.gov (United States)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  18. Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process

    Science.gov (United States)

    Song, Ki-Whan; Lee, Yong Kyu; Sim, Jae Sung; Kim, Kyung Rok; Lee, Jong Duk; Park, Byung-Gook; You, Young Sub; Park, Joo-On; Jin, You Seung; Kim, Young-Wug

    2005-04-01

    We propose a complementary self-biasing method which enables the single-electron transistor (SET)/complementary metal-oxide semiconductor (CMOS) hybrid multi-valued logics (MVLs) to operate well at high temperatures, where the peak-to-valley current ratio (PVCR) of the Coulomb oscillation markedly decreases. The new architecture is implemented with a few transistors by utilizing the phase control capability of the sidewall depletion gates in dual-gate single-electron transistors (DGSETs). The suggested scheme is evaluated by a SPICE simulation with an analytical DGSET model. Furthermore, we have developed a new process technology for the SET/CMOS hybrid systems. We have confirmed that both of the fabricated devices, namely, SET and CMOS transistors, exhibit the ideal characteristics for the complementary self-biasing scheme: the SET shows clear Coulomb oscillations with a 100 mV period and the CMOS transistors show a high voltage gain.

  19. Design and simulation of self-biased circulators in the ultra high frequency band

    International Nuclear Information System (INIS)

    Wang Jianwei; Geiler, Anton; Mistry, Perhaad; Kaeli, David R.; Harris, Vincent G.; Vittoria, Carmine

    2012-01-01

    Theoretical models were developed to design self-biased Y-junction circulators operating at ultra high frequency (UHF). The proposed circulator designs consist of insulating nanowires of yttrium iron garnet (YIG) embedded in high permittivity barium–strontium titanate (BSTO) substrates. A design with as many as 10 5 or greater wires may be considered in its entirety to determine the electromagnetic scattering S-parameters of a circulator design, thus helping to mitigate the computational limitations of the available finite element method (FEM) tools. The approach seeks to represent the nanowires and the BSTO substrate by an equivalent medium with effective properties inclusive of the average saturation magnetization, dynamic demagnetizing fields, and permittivity. The effective medium approach was validated in comparison with the FEM models. Using the proposed approach, a self-biased junction circulator consisting of YIG nanowires embedded in a BSTO substrate was designed and simulated in which the center frequency insertion loss was calculated to be as low as 0.16 dB with isolation of −42.3 dB at 1 GHz. The 20 dB bandwidth was calculated to be 50 MHz. These results suggest that practical self-biased circulators at the UHF band are feasible. - Highlights: ► Presented a self-biased Y-junction circulator topology on composite substrate with YIG nanowires and high permittivity BSTO. ► Developed an equivalent model to characterize the composite substrate. ► Designed a self-biased junction circulator consisting of YIG nanowires embedded in a BSTO substrate at 1 GHz.

  20. Critical voltage effects in electron channeling patterns

    International Nuclear Information System (INIS)

    Farrow, R.C.

    1984-01-01

    Electron channeling patterns were used to study critical voltage effects in the metals molybdenum and tungsten. The purpose was to characterize both theoretically and experimentally how a critical voltage will affect the channeling pattern line shapes. The study focused on the second order critical voltage that results from the degeneracy between the Bloch wave states of the (110) and (220) reflections. Theoretical (110) series electron channeling pattern line profiles were calculated using the dynamical theory of Hirsch and Humphreys (1970). A 10 beam dynamical electron diffraction calculation was performed (using complex Fourier lattice potentials) to generate Bloch wave coefficients, excitation amplitudes, and absorption coefficients needed for determining backscattering coefficients and subsequent backscattered electron intensities. The theoretical model is applicable to electron diffraction at all energies since no high energy approximation or perturbation method was used

  1. Implementation of Self-Bias Transistor on Voting Logic

    International Nuclear Information System (INIS)

    Harzawardi Hasim; Syirrazie Che Soh

    2014-01-01

    Study in the eld of digital integrated circuit (IC) already become common to the modern industrial. Day by day we have been introduced with new gadget that was developed based on transistor. This paper will study the implementation of self-bias transistor on voting logic. The self-bias transistor will connected both on pull-up network and pull-down network. On previous research, study on comparison of total number of transistors, time propagation delay, and frequency between NAND and NOR gate of voting logic. It's show, with the same number of transistor, NAND gate achieve high frequency and low time propagation delay compare to NOR gate. We extend this analysis by comparing the total number of transistor, time propagation delay, frequency and power dissipation between common NAND gate with self-bias NAND gate. Extensive LTSpice simulations were performed using IBM 90 nm CMOS(Complementary Metal Oxide Semiconductor) process technology. The result show self-bias voting NAND gate consumes 54 % less power dissipation, 43% slow frequency and 43 % high time propagation delay compare to common voting NAND gate. (author)

  2. Coincident ion acceleration and electron extraction for space propulsion using the self-bias formed on a set of RF biased grids bounding a plasma source

    International Nuclear Information System (INIS)

    Rafalskyi, D; Aanesland, A

    2014-01-01

    We propose an alternative method to accelerate ions in classical gridded ion thrusters and ion sources such that co-extracted electrons from the source may provide beam space charge neutralization. In this way there is no need for an additional electron neutralizer. The method consists of applying RF voltage to a two-grid acceleration system via a blocking capacitor. Due to the unequal effective area of the two grids in contact with the plasma, a dc self-bias is formed, rectifying the applied RF voltage. As a result, ions are continuously accelerated within the grid system while electrons are emitted in brief instants within the RF period when the RF space charge sheath collapses. This paper presents the first experimental results and a proof-of-principle. Experiments are carried out using the Neptune thruster prototype which is a gridded Inductively Coupled Plasma (ICP) source operated at 4 MHz, attached to a larger beam propagation chamber. The RF power supply is used both for the ICP discharge (plasma generation) and powering the acceleration grids via a capacitor for ion acceleration and electron extraction without any dc power supplies. The ion and electron energies, particle flux and densities are measured using retarding field energy analyzers (RFEA), Langmuir probes and a large beam target. The system operates in Argon and N 2 . The dc self-bias is found to be generated within the gridded extraction system in all the range of operating conditions. Broad quasi-neutral ion-electron beams are measured in the downstream chamber with energies up to 400 eV. The beams from the RF acceleration method are compared with classical dc acceleration with an additional external electron neutralizer. It is found that the two acceleration techniques provide similar performance, but the ion energy distribution function from RF acceleration is broader, while the floating potential of the beam is lower than for the dc accelerated beam. (paper)

  3. Self-Biased Differential Rectifier with Enhanced Dynamic Range for Wireless Powering

    KAUST Repository

    Ouda, Mahmoud H.

    2016-08-29

    A self-biased, cross-coupled, differential rectifier is proposed with enhanced power-conversion efficiency over an extended range of input power. A prototype is designed for UHF 433MHz RF power-harvesting applications and is implemented using 0.18μm CMOS technology. The proposed rectifier architecture is compared to the conventional cross-coupled rectifier. It demonstrates an improvement of more than 40% in the rectifier power conversion efficiency (PCE) and an input power range extension of more than 50% relative to the conventional crosscoupled rectifier. A sensitivity of -15.2dBm (30μW) input power for 1V output voltage and a peak power-conversion efficiency of 65% are achieved for a 50kω load. © 2004-2012 IEEE.

  4. Self-Biased 215MHz Magnetoelectric NEMS Resonator for Ultra-Sensitive DC Magnetic Field Detection

    Science.gov (United States)

    Nan, Tianxiang; Hui, Yu; Rinaldi, Matteo; Sun, Nian X.

    2013-06-01

    High sensitivity magnetoelectric sensors with their electromechanical resonance frequencies electromechanical systems (NEMS) resonator with an electromechanical resonance frequency of 215 MHz based on an AlN/(FeGaB/Al2O3) × 10 magnetoelectric heterostructure for detecting DC magnetic fields. This magnetoelectric NEMS resonator showed a high quality factor of 735, and strong magnetoelectric coupling with a large voltage tunable sensitivity. The admittance of the magnetoelectric NEMS resonator was very sensitive to DC magnetic fields at its electromechanical resonance, which led to a new detection mechanism for ultra-sensitive self-biased RF NEMS magnetoelectric sensor with a low limit of detection of DC magnetic fields of ~300 picoTelsa. The magnetic/piezoelectric heterostructure based RF NEMS magnetoelectric sensor is compact, power efficient and readily integrated with CMOS technology, which represents a new class of ultra-sensitive magnetometers for DC and low frequency AC magnetic fields.

  5. A thermoelectric voltage effect in polyethylene oxide

    CERN Document Server

    Martin, B; Kliem, H

    2003-01-01

    The conductivity of polyethylene oxide (PEO) is described with a three-dimensional hopping model considering electrostatic interactions between the ions. Ions fluctuate over energy-barriers in a multi-well potential. To decide whether positive or negative charges are responsible for this conductivity, the thermoelectric voltage is measured. The samples are embedded between two aluminium-electrodes. The oxide on the interface between the electrodes and the PEO serves as a blocking layer. The temperature of each electrode is controlled by a Peltier element. A temperature step is applied to one electrode by changing the temperature of one of the Peltier elements. Due to this temperature gradient, the mobile charges fluctuate thermally activated from the warmer side to the colder side of the sample. The direction of the measured thermoelectric voltage indicates the type of mobile charges. It is found that positive charges are mobile. Further, it is shown that the absolute value of the thermoelectric voltage depen...

  6. The effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased sup 1 sup 0 B-coated high-purity epitaxial GaAs thermal neutron detectors

    CERN Document Server

    Gersch, H K; Simpson, P A

    2002-01-01

    High-purity epitaxial GaAs sup 1 sup 0 B-coated thermal neutron detectors advantageously operate at room temperature without externally applied voltage. Sample detectors were systematically irradiated at fixed grid locations near the core of a 2 MW research reactor to determine their operational neutron dose threshold. Reactor pool locations were assigned so that fast and thermal neutron fluxes to the devices were similar. Neutron fluences ranged between 10 sup 1 sup 1 and 10 sup 1 sup 4 n/cm sup 2. GaAs detectors were exposed to exponential fluences of base ten. Ten detector designs were irradiated and studied, differentiated between p-i-n diodes and Schottky barrier diodes. The irradiated sup 1 sup 0 B-coated detectors were tested for neutron detection sensitivity in a thermalized neutron beam. Little damage was observed for detectors irradiated at neutron fluences of 10 sup 1 sup 2 n/cm sup 2 and below, but signals noticeably degraded at fluences of 10 sup 1 sup 3 n/cm sup 2. Catastrophic damage was appare...

  7. Radiation effects on residual voltage of polyethylene films

    International Nuclear Information System (INIS)

    Kyokane, Jun; Park, Dae-Hee; Yoshino, Katsumi.

    1986-01-01

    It has recently been pointed out that diagnosis of deterioration in insulating materials for electric cables used in nuclear power plants and outer space (communications satellite in particular) can be effectively performed based on measurements of residual voltage. In the present study, polyethylene films are irradiated with γ-rays or electron beam to examine the changes in residual voltage characteristics. Irradiation of electron beam and γ-rays are carried out to a dose of 0 - 90 Mrad and 0 - 100 Mrad, respectively. Measurements are made of the dependence of residual voltage on applied voltage, electron beam and γ-ray irradiation, annealing temperature and annealing time. Results show that carriers, which are once trapped after being released from the electrode, move within the material after the opening of the circuit to produce resiual voltage. The residual voltage increases with increasing dose of electron beam or γ-ray and levels off at high dose. Residual voltage is increased about several times by either electron beam or γ-rays, but electron beam tends to cause greater residual voltage than γ-ray. Polyethylene films irradiated with electron beam can recover upon annealing. It is concluded from observations made that residual voltage has close relations with defects in molecular structures caused by radiations, particularly the breaking of backbone chains and alteration in superstructures. (Nogami, K.)

  8. A thermoelectric voltage effect in polyethylene oxide

    International Nuclear Information System (INIS)

    Martin, Bjoern; Wagner, Achim; Kliem, Herbert

    2003-01-01

    The conductivity of polyethylene oxide (PEO) is described with a three-dimensional hopping model considering electrostatic interactions between the ions. Ions fluctuate over energy-barriers in a multi-well potential. To decide whether positive or negative charges are responsible for this conductivity, the thermoelectric voltage is measured. The samples are embedded between two aluminium-electrodes. The oxide on the interface between the electrodes and the PEO serves as a blocking layer. The temperature of each electrode is controlled by a Peltier element. A temperature step is applied to one electrode by changing the temperature of one of the Peltier elements. Due to this temperature gradient, the mobile charges fluctuate thermally activated from the warmer side to the colder side of the sample. The direction of the measured thermoelectric voltage indicates the type of mobile charges. It is found that positive charges are mobile. Further, it is shown that the absolute value of the thermoelectric voltage depends on the energy-barrier heights in the multi-well potential

  9. A novel self-biased linear silicon drift detector

    International Nuclear Information System (INIS)

    Corsi, F.; Gramegna, G.; Marzocca, C.

    1999-01-01

    A novel linear silicon drift detector (SDD) is proposed in which the proper potential profile is established by the voltage drop along a unique p + cathode implanted across the surfaces. This p + implant, arranged in a zigzag shape, acts at the same time as voltage divider and field cathode and allows one to increase the sensitive area, improving also the uniformity of the thermal distribution and thus minimizing the fluctuation of the electron mobility on the sensitive zone of the SDD. The perturbations of the drift field due to the asymmetry of the strips constituting the zigzag cathode have been evaluated by solving analytically Poisson's equation for a simplified model of the structure. Three-dimensional numerical simulations have been carried out to prove the negligible amount of the perturbation and the effectiveness of the proposed structure. Based on this principle, a prototype has been manufactured at Canberra Semiconductor Company. Dynamic measurements of the time-of-flight of an injected charge prove that the linearity of the prototype and the drift uniformity in the anode direction are very high

  10. Magnetoelectric effect in two-layered self-biased composites Tb{sub 0.12}Dy{sub 0.2}Fe{sub 0.68}/epoxy - PbZr{sub 0.53}Ti{sub 0.47}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Kalgin, A.V.; Gridnev, S.A.; Popov, I.I. [Voronezh State Technical University, Voronezh (Russian Federation)

    2017-03-15

    Direct magnetoelectric (ME) effect in two-layered Tb{sub 0.12}Dy{sub 0.2}Fe{sub 0.68}/Epoxy - PbZr{sub 0.53}Ti{sub 0.47}O{sub 3} composites containing magnetostrictive layers of the epoxy with distributed in it Tb{sub 0.12}Dy{sub 0.2}Fe{sub 0.68} granules and piezoelectric layers of the PbZr{sub 0.53}Ti{sub 0.47}O{sub 3} ceramics was studied. It was found, that the gradient distribution of Tb{sub 0.12}Dy{sub 0.2}Fe{sub 0.68} granules in magnetostrictive layers induces the internal (self-biased) magnetic field. This field leads to the increase in ME responses in composites with the gradient distribution of Tb{sub 0.12}Dy{sub 0.2}Fe{sub 0.68} granules in magnetostrictive layers as compared with ME responses in composites with the random distribution of Tb{sub 0.12}Dy{sub 0.2}Fe{sub 0.68} granules in magnetostrictive layers, which does not induce the internal magnetic field. We revealed the possibility of controlling and determining values of the internal magnetic field in composites and conditions for obtaining optimal ME responses. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Effects of load voltage on voltage breakdown modes of electrical exploding aluminum wires in air

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jian; Li, Xingwen, E-mail: xwli@mail.xjtu.edu.cn; Yang, Zefeng; Wang, Kun; Chao, Youchuang; Shi, Zongqian; Jia, Shenli; Qiu, Aici [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China)

    2015-06-15

    The effects of the load voltage on the breakdown modes are investigated in exploding aluminum wires driven by a 1 kA, 0.1 kA/ns pulsed current in air. From laser probing images taken by laser shadowgraphy, schlieren imaging, and interferometry, the position of the shockwave front, the plasma channel, and the wire core edge of the exploding product can be determined. The breakdown mode makes a transition from the internal mode, which involves breakdown inside the wire core, to the shunting mode, which involves breakdown in the compressed air, with decreasing charging voltage. The breakdown electrical field for a gaseous aluminum wire core of nearly solid density is estimated to be more than 20 kV/cm, while the value for gaseous aluminum of approximately 0.2% solid density decreases to 15–20 kV/cm. The breakdown field in shunting mode is less than 20 kV/cm and is strongly affected by the vaporized aluminum, the desorbed gas, and the electrons emitted from the wire core during the current pause. Ohmic heating during voltage collapses will induce further energy deposition in the current channel and thus will result in different expansion speeds for both the wire core and the shockwave front in the different modes.

  12. Effect of bias voltage on microstructure and mechanical properties of ...

    Indian Academy of Sciences (India)

    In the present study, authors report on the effect that substrate bias voltage has on the ... ings and at high deposition rates, having a wide range of .... The coatings were then ultra- ... The results of a typical compositional analysis carried out.

  13. Proximity effects of high voltage electric power transmission lines on ...

    African Journals Online (AJOL)

    The proximity effects of high voltage electric power transmission lines on Leyland Cypress (xCupressocyparis leylandii (Dallim. and A.B. Jacks.) Dallim) and Japanese Privet (Ligustrum japonicum Thunb.) growth were examined in a private nursery located in Sakarya, Turkey. Five transect were randomly chosen in both ...

  14. THE EFFECT OF VOLTAGE ON ELECTROCHEMICAL DEGRADATION OF TRICHLOROETHYLENE

    Science.gov (United States)

    This study investigates electrochemical degradation of Trichloroethylene (TCE) using granular graphite as electrodes in a flow-through reactor system. The experiments were conducted to obtain information on the effect of voltage and flow rates on the degradation rates of TCE. The...

  15. Grain boundary effect of ZnO voltage sensitive ceramic

    International Nuclear Information System (INIS)

    Zhu Ziying; Lei Deming; Li Jingde

    1991-01-01

    Positron annihilation techenique has been to study the non-linear Ohmic effect of ZnO. The resemblence of curve representing the short life-time τ 1 and its component I 1 vs. current i with the voltage drop curve proves that this component I 1 belongs to the annihilation of transporting electron and positron. The experimental results give support to the explaination of Schottky barrier model for the effect of intergranular boundary

  16. Optimum distributed generation placement with voltage sag effect minimization

    International Nuclear Information System (INIS)

    Biswas, Soma; Goswami, Swapan Kumar; Chatterjee, Amitava

    2012-01-01

    Highlights: ► A new optimal distributed generation placement algorithm is proposed. ► Optimal number, sizes and locations of the DGs are determined. ► Technical factors like loss, voltage sag problem are minimized. ► The percentage savings are optimized. - Abstract: The present paper proposes a new formulation for the optimum distributed generator (DG) placement problem which considers a hybrid combination of technical factors, like minimization of the line loss, reduction in the voltage sag problem, etc., and economical factors, like installation and maintenance cost of the DGs. The new formulation proposed is inspired by the idea that the optimum placement of the DGs can help in reducing and mitigating voltage dips in low voltage distribution networks. The problem is configured as a multi-objective, constrained optimization problem, where the optimal number of DGs, along with their sizes and bus locations, are simultaneously obtained. This problem has been solved using genetic algorithm, a traditionally popular stochastic optimization algorithm. A few benchmark systems radial and networked (like 34-bus radial distribution system, 30 bus loop distribution system and IEEE 14 bus system) are considered as the case study where the effectiveness of the proposed algorithm is aptly demonstrated.

  17. Self-biased broadband magnet-free linear isolator based on one-way space-time coherency

    Science.gov (United States)

    Taravati, Sajjad

    2017-12-01

    This paper introduces a self-biased broadband magnet-free and linear isolator based on one-way space-time coherency. The incident wave and the space-time-modulated medium share the same temporal frequency and are hence temporally coherent. However, thanks to the unidirectionally of the space-time modulation, the space-time-modulated medium and the incident wave are spatially coherent only in the forward direction and not in the opposite direction. As a consequence, the energy of the medium strongly couples to the propagating wave in the forward direction, while it conflicts with the propagating wave in the opposite direction, yielding strong isolation. We first derive a closed-form solution for the wave scattering from a spatiotemporally coherent medium and then show that a perfectly coherent space-time-modulated medium provides a moderate isolation level which is also subject to one-way transmission gain. To overcome this issue, we next investigate the effect of space-coherency imperfection between the medium and the wave, while they are still perfectly temporally coherent. Leveraging the spatial-coherency imperfection, the medium exhibits a quasiarbitrary and strong nonreciprocal transmission. Finally, we present the experimental demonstration of the self-biased version of the proposed broadband isolator, exhibiting more than 122 % fractional operation bandwidth.

  18. Self-Biased Differential Rectifier with Enhanced Dynamic Range for Wireless Powering

    KAUST Repository

    Ouda, Mahmoud H.; Khalil, Waleed; Salama, Khaled N.

    2016-01-01

    A self-biased, cross-coupled, differential rectifier is proposed with enhanced power-conversion efficiency over an extended range of input power. A prototype is designed for UHF 433MHz RF power-harvesting applications and is implemented using 0.18μm

  19. Self-biased cobalt ferrite nanocomposites for microwave applications

    Energy Technology Data Exchange (ETDEWEB)

    Hannour, Abdelkrim, E-mail: abdelkrim.hannour@hotmail.com [LT2C Laboratory, Jean-Monnet University, 25 rue Dr. Rémy Annino, F-42000, Saint-Etienne (France); Vincent, Didier; Kahlouche, Faouzi; Tchangoulian, Ardaches [LT2C Laboratory, Jean-Monnet University, 25 rue Dr. Rémy Annino, F-42000, Saint-Etienne (France); Neveu, Sophie; Dupuis, Vincent [UPMC Univ Paris 06, UMR 7195, PECSA, F-75005, Paris (France)

    2014-03-15

    Oriented CoFe{sub 2}O{sub 4} nanoparticles, dispersed in polymethyl methacrylate (PMMA) matrix, were fabricated by magnetophoretic deposition of functionalized nanocolloidal cobalt ferrite particles into porous alumina membrane. Their magnetic behavior exhibits an out-of-plane easy axis with a large remanent magnetization and coercitivity. This orientation allows high effective internal magnetic anisotropy that contributes to the permanent bias along the wire axis. The microwave studies reveal a ferromagnetic resonance at 46.5 and 49.5 GHz, depending on the filling ratio of the membrane. Ansoft High Frequency Structure Simulator (Ansoft HFSS) simulations are in good agreement with experimental results. Such nanocomposite is presented as one of the promising candidates for microwave devices (circulators, isolators, noise suppressors etc.). - Highlights: • Oriented magnetic CoFe{sub 2}O{sub 4} nanoparticles were fabricated by magnetophoretic deposition of functionalized cobalt ferrite particles into porous alumina membrane. • The nanocomposite obtained presents an out-of-plane easy axis with a large remanent magnetization and coercitivity. • The high effective internal magnetic anisotropy contributes to the permanent bias along the wire axis. • The frequency ferromagnetic resonance ranges from 46.5 to 49.5 GHz, depending on the filling ratio of the membrane. • We have obtained a good agreement between Ansoft High Frequency Structure Simulator simulations and experimental results.

  20. Self-biased cobalt ferrite nanocomposites for microwave applications

    International Nuclear Information System (INIS)

    Hannour, Abdelkrim; Vincent, Didier; Kahlouche, Faouzi; Tchangoulian, Ardaches; Neveu, Sophie; Dupuis, Vincent

    2014-01-01

    Oriented CoFe 2 O 4 nanoparticles, dispersed in polymethyl methacrylate (PMMA) matrix, were fabricated by magnetophoretic deposition of functionalized nanocolloidal cobalt ferrite particles into porous alumina membrane. Their magnetic behavior exhibits an out-of-plane easy axis with a large remanent magnetization and coercitivity. This orientation allows high effective internal magnetic anisotropy that contributes to the permanent bias along the wire axis. The microwave studies reveal a ferromagnetic resonance at 46.5 and 49.5 GHz, depending on the filling ratio of the membrane. Ansoft High Frequency Structure Simulator (Ansoft HFSS) simulations are in good agreement with experimental results. Such nanocomposite is presented as one of the promising candidates for microwave devices (circulators, isolators, noise suppressors etc.). - Highlights: • Oriented magnetic CoFe 2 O 4 nanoparticles were fabricated by magnetophoretic deposition of functionalized cobalt ferrite particles into porous alumina membrane. • The nanocomposite obtained presents an out-of-plane easy axis with a large remanent magnetization and coercitivity. • The high effective internal magnetic anisotropy contributes to the permanent bias along the wire axis. • The frequency ferromagnetic resonance ranges from 46.5 to 49.5 GHz, depending on the filling ratio of the membrane. • We have obtained a good agreement between Ansoft High Frequency Structure Simulator simulations and experimental results

  1. The effect of activation rate on left atrial bipolar voltage in patients with paroxysmal atrial fibrillation.

    Science.gov (United States)

    Williams, Steven E; Linton, Nick; O'Neill, Louisa; Harrison, James; Whitaker, John; Mukherjee, Rahul; Rinaldi, Christopher A; Gill, Jaswinder; Niederer, Steven; Wright, Matthew; O'Neill, Mark

    2017-09-01

    Bipolar voltage is used during electroanatomic mapping to define abnormal myocardium, but the effect of activation rate on bipolar voltage is not known. We hypothesized that bipolar voltage may change in response to activation rate. By examining corresponding unipolar signals we sought to determine the mechanisms of such changes. LA extrastimulus mapping was performed during CS pacing in 10 patients undergoing first time paroxysmal atrial fibrillation ablation. Bipolar and unipolar electrograms were recorded using a PentaRay catheter (4-4-4 spacing) and indifferent IVC electrode, respectively. An S1S2 pacing protocol was delivered with extrastimulus coupling interval reducing from 350 to 200 milliseconds. At each recording site (119 ± 37 per LA), bipolar peak-to-peak voltage, unipolar peak to peak voltage and activation delay between unipole pairs was measured. Four patterns of bipolar voltage/extrastimulus coupling interval curves were seen: voltage attenuation with plateau voltage >1 mV (48 ± 15%) or voltage unaffected by coupling interval with plateau voltage >1 mV (17 ± 10%) or voltage attenuation were associated with significantly greater unipolar voltage attenuation at low (25 ± 28 mV/s vs. 9 ± 11 mV/s) and high (23 ± 29 mV/s vs. 6 ± 12 mV/s) plateau voltage sites (P voltage attenuation (P = 0.026). Bipolar electrogram voltage is dependent on activation rate at a significant proportion of sites. Changes in unipolar voltage and timing underlie these effects. These observations have important implications for use of voltage mapping to delineate abnormal atrial substrate. © 2017 The Authors. Journal of Cardiovascular Electrophysiology published by Wiley Periodicals, Inc.

  2. Effect of DC voltage pulses on memristor behavior.

    Energy Technology Data Exchange (ETDEWEB)

    Evans, Brian R.

    2013-10-01

    Current knowledge of memristor behavior is limited to a few physical models of which little comprehensive data collection has taken place. The purpose of this research is to collect data in search of exploitable memristor behavior by designing and implementing tests on a HP Labs Rev2 Memristor Test Board. The results are then graphed in their optimal format for conceptualizing behavioral patterns. This series of experiments has concluded the existence of an additional memristor state affecting the behavior of memristors when pulsed with positively polarized DC voltages. This effect has been observed across multiple memristors and data sets. The following pages outline the process that led to the hypothetical existence and eventual proof of this additional state of memristor behavior.

  3. Tailoring magnetic properties of self-biased hexaferrites using an alternative copolymer of isobutylene and maleic anhydride

    Science.gov (United States)

    Wu, Chuanjian; Yu, Zhong; Sokolov, Alexander S.; Yu, Chengju; Sun, Ke; Jiang, Xiaona; Lan, Zhongwen; Harris, Vincent G.

    2018-05-01

    Discussed is a novel self-biased hexaferrite gelling system based on a nontoxic and water-soluble copolymer of isobutylene and maleic anhydride. This copolymer simultaneously acts as a dispersant and gelling agent, and recently received much attention from the ceramics community. Herein its effects on the rheological conditions throughout magnetic-field pressing, and consequently, orientation, density and magnetic properties of textured hexaferrites were investigated. Ka-band FMR linewidths were measured, and the crystalline anisotropy and porosity induced linewidth broadening were estimated according to Schlömann's theory. The copolymer allowed to reduce the friction between micron-sized magnetic particulates, resulting in higher density and degree of crystalline orientation, and lower FMR linewidth.

  4. Large self-biased and multi-peak magnetoelectric coupling in transducer of Pb(Zr,Ti)O3 plates and H-type magnetization-graded ferromagnetic fork

    Science.gov (United States)

    Shen, Yongchun; Ling, Zhihao; Lu, Caijiang

    2015-12-01

    This paper develops a self-biased magnetoelectric (ME) composite Metglas/H-type-FeNi/PZT (MHFP) of H-type magnetization-graded Metglas/H-type-FeNi fork and piezoelectric Pb(Zr,Ti)O3 (PZT) plate. By using the magnetization-graded magnetostrictive layer and symmetrical H-type structure, giant self-biased ME coupling and multi-peak phenomenon are observed. The zero-biased ME voltage coefficient of MHFP composite reaches ˜63.8 V/cm Oe, which is ˜37.5 times higher than that of traditional FeNi/PZT laminate. The output ME voltage has a good near linear relation with Hac and is determined to be ˜5.1 V/Oe and ˜10.6 mV/Oe at ˜65 kHz and 1 kHz, respectively. These indicate that the proposed composite show promising applications for ME transducers and high-sensitivity self-biased magnetic sensors.

  5. Voltage stress effects on microcircuit accelerated life test failure rates

    Science.gov (United States)

    Johnson, G. M.

    1976-01-01

    The applicability of Arrhenius and Eyring reaction rate models for describing microcircuit aging characteristics as a function of junction temperature and applied voltage was evaluated. The results of a matrix of accelerated life tests with a single metal oxide semiconductor microcircuit operated at six different combinations of temperature and voltage were used to evaluate the models. A total of 450 devices from two different lots were tested at ambient temperatures between 200 C and 250 C and applied voltages between 5 Vdc and 15 Vdc. A statistical analysis of the surface related failure data resulted in bimodal failure distributions comprising two lognormal distributions; a 'freak' distribution observed early in time, and a 'main' distribution observed later in time. The Arrhenius model was shown to provide a good description of device aging as a function of temperature at a fixed voltage. The Eyring model also appeared to provide a reasonable description of main distribution device aging as a function of temperature and voltage. Circuit diagrams are shown.

  6. Effect of inductance between middle and outer cylinders on diode voltage of pulse forming line

    International Nuclear Information System (INIS)

    Liu Jinliang; Wang Xinxin

    2008-01-01

    Based on the experimental device of the water spiral pulse forming line(PFL) type electron beam accelerator, the effect of inductance between the middle and outer cylinders of PFL on diode voltage is theoretically and experimentally studied in this paper. The formulae are introduced, with which the effect of inductance on diode voltage is calculated. In addition, the diode voltage waveform is simulated through the Pspice software. The theoretical and simulated results agree well with the experimental results, which show that large inductance between middle and outer cylinders can shorten the waveform flat part of diode voltage, increase waveform rise time and reduce the diode peak voltage. When the inductance is smaller than 200 nH, a nearly square voltage waveform can be obtained in field-emission diode. (authors)

  7. Effect of voltage sags on digitally controlled line connected switched-mode power supplies

    DEFF Research Database (Denmark)

    Török, Lajos; Munk-Nielsen, Stig

    2012-01-01

    Different voltage disorders like voltage fluctuations, sags, frequency variations may occur in the power supply networks due to different fault conditions. These deviations from normal operation affects in different ways the line connected devices. Standards were developed to protect and ensure...... of voltage sags is analyzed. Fault tolerant control algorithm was designed, implemented and is discussed. The fault conditions and their effects were investigated at different power levels....

  8. Effects of Electrode Material on the Voltage of a Tree-Based Energy Generator.

    Science.gov (United States)

    Hao, Zhibin; Wang, Guozhu; Li, Wenbin; Zhang, Junguo; Kan, Jiangming

    2015-01-01

    The voltage between a standing tree and its surrounding soil is regarded as an innovative renewable energy source. This source is expected to provide a new power generation system for the low-power electrical equipment used in forestry. However, the voltage is weak, which has caused great difficulty in application. Consequently, the development of a method to increase the voltage is a key issue that must be addressed in this area of applied research. As the front-end component for energy harvesting, a metal electrode has a material effect on the level and stability of the voltage obtained. This study aimed to preliminarily ascertain the rules and mechanisms that underlie the effects of electrode material on voltage. Electrodes of different materials were used to measure the tree-source voltage, and the data were employed in a comparative analysis. The results indicate that the conductivity of the metal electrode significantly affects the contact resistance of the electrode-soil and electrode-trunk contact surfaces, thereby influencing the voltage level. The metal reactivity of the electrode has no significant effect on the voltage. However, passivation of the electrode materials markedly reduces the voltage. Suitable electrode materials are demonstrated and recommended.

  9. Effects of Electrode Material on the Voltage of a Tree-Based Energy Generator.

    Directory of Open Access Journals (Sweden)

    Zhibin Hao

    Full Text Available The voltage between a standing tree and its surrounding soil is regarded as an innovative renewable energy source. This source is expected to provide a new power generation system for the low-power electrical equipment used in forestry. However, the voltage is weak, which has caused great difficulty in application. Consequently, the development of a method to increase the voltage is a key issue that must be addressed in this area of applied research. As the front-end component for energy harvesting, a metal electrode has a material effect on the level and stability of the voltage obtained. This study aimed to preliminarily ascertain the rules and mechanisms that underlie the effects of electrode material on voltage. Electrodes of different materials were used to measure the tree-source voltage, and the data were employed in a comparative analysis. The results indicate that the conductivity of the metal electrode significantly affects the contact resistance of the electrode-soil and electrode-trunk contact surfaces, thereby influencing the voltage level. The metal reactivity of the electrode has no significant effect on the voltage. However, passivation of the electrode materials markedly reduces the voltage. Suitable electrode materials are demonstrated and recommended.

  10. Analysis for the Effects of Grid Voltage Degradation on APR1400 Operation, Case Study for Egypt

    International Nuclear Information System (INIS)

    Hassan, Mostafa Ahmed Fouad; Koo, Chang Choong

    2015-01-01

    Egypt is one of the countries planning to introduce a NPP into its electrical power system. Although the Egyptian power system has sufficient capacity to integrate any commercially available nuclear unit as the total installed capacity of the power system is more than 32GWe, which is more than 10 times capacity of any nuclear unit in the range of 1000 to 1700MWe, the system is vulnerable to extreme voltage variations, especially voltage degradation during peak load conditions. These conditions can lead to voltage collapse if a counter measure, usually load shedding, is not taken in a proper time. Hence, it is necessary to analyze the effect of such conditions on the safe and economic operation of the NPP. In this paper we analyzed the effects of grid voltage degradation on the safe and economic operation of the Advanced Power Reactor (APR1400) to determine any adverse effects on the plant auxiliary loads while operating in the Egyptian power system. In this paper the effects of grid voltage degradation on the safe and economic operation of APR1400 were investigated taking into account, generator operating limits, plant safety requirements, operation modes and loading categories in order to determine any adverse effect on the plant auxiliary loads while operating in the Egyptian power system. The results of the load flow and motor starting analysis demonstrated that during normal operation the automatic voltage regulator and transformers OLTCs can mitigate the effect of grid voltage degradation without any detrimental effect on the plant auxiliary loads. During the highly unlikely LOCA condition if the grid voltage degraded below 95%, the degraded voltage relays at Class 1E 4.16 kV buses will trip the supply and load breakers and reconnect the required safety loads to the EDG after 4 minutes time delay. During this period the safety loads required for LOCA can be started and accelerated to their rated speed safely even in the worst case of expected degraded voltage

  11. Effect of Circuit Breaker Shunt Resistance on Chaotic Ferroresonance in Voltage Transformer

    Directory of Open Access Journals (Sweden)

    RADMANESH, H.

    2010-08-01

    Full Text Available Ferroresonance or nonlinear resonance is a complex electrical phenomenon, which may cause over voltages and over currents in the electrical power system which endangers the system reliability and continuous safe operating. This paper studies the effect of circuit breaker shunt resistance on the control of chaotic ferroresonance in a voltage transformer. It is expected that this resistance generally can cause ferroresonance dropout. For confirmation this aspect Simulation has been done on a one phase voltage transformer rated 100VA, 275kV. The magnetization characteristic of the transformer is modeled by a single-value two-term polynomial with q=7. The simulation results reveal that considering the shunt resistance on the circuit breaker, exhibits a great mitigating effect on ferroresonance over voltages. Significant effect on the onset of chaos, the range of parameter values that may lead to chaos along with ferroresonance voltages has been obtained and presented.

  12. The electric strength of high-voltage transformers insulation at effect of partial dischargers

    International Nuclear Information System (INIS)

    Khoshravan, E.; Zeraatparvar, A.; Gashimov, A.M.; Mehdizadeh, R.N.

    2001-01-01

    Full text : In paper the change of electric strength of high-voltage transformers insulation at the effect of partial discharges with space charge accumulation was investigated. It is revealed that the effect of partial discharges of insulation materials results the reduction of their pulsing electric strength which can restore the own initial value at releasing of saved charge the volume of a material under condition of absence the ineversible structural changes in it. Researches of high-voltage transformers insulation's non-failure operation conditions show, that at increasing of insulation work time in a strong electrical field the reduction of average breakdown voltages with simultaneous increasing of spread in discharge voltage values takes place. It authentically testifies to reduction of short-time discharge voltage of insulation materials during their electrical aging. As the basic reason of insulation electrical aging the partial discharges occurring in gas cavities inside insulation were considered. It is known that the space charges will be formed in insulation elements of high-voltage devices which effects in dielectrical property of these elements including the electric strength and the space charge formation can occur also at partial discharges in an alternating voltage while the service of high-voltage transformers. In the given work the experiments in revealing separate influence partial discharges in pulsing electric strength of insulation materials at presence and at absence inside them the space charge were spent

  13. Studies of radiation blistering effects on voltage holding

    International Nuclear Information System (INIS)

    Miley, G.H.

    1975-01-01

    The surfaces of niobium and tungsten wires were blistered by 300-keV helium-ion irradiation and then tested for voltage holding. A cylindrical projection-tube technique was employed so that regions of strong electron emission could be observed and later examined with a scanning electron microscope (SEM). Blistering was found to cause significant increases in pre-breakdown currents. However, these currents tend to saturate over a region corresponding to around 200-400 kV/cm surface field such that the ultimate voltage breakdown limit is not seriously reduced. Emission image observations and SEM photographs suggest that, in many cases, parts of the blistered surface are gradually erected by the strong surface fields, but this may not occur until after several arc breakdowns. SEM photographs also indicate that vapor from the anode may play an important part in the breakdown mechanism. Implications of these results to the design of devices important to fusion development, such as direct collectors and ion sources, are briefly discussed. The importance of future in situ irradiation-voltage experiments is also stressed. (U.S.)

  14. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    International Nuclear Information System (INIS)

    Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

    2014-01-01

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

  15. Effects of Photovoltaic and Fuel Cell Hybrid System on Distribution Network Considering the Voltage Limits

    Directory of Open Access Journals (Sweden)

    ABYANEH, H. A.

    2010-11-01

    Full Text Available Development of distribution network and power consumption growth, increase voltage drop on the line impedance and therefore voltage drop in system buses. In some cases consumption is so high that voltage in some buses exceed from standard. In this paper, effect of the fuel cell and photovoltaic hybrid system on distribution network for solving expressed problem is studied. For determining the capacity of each distributed generation source, voltage limitation on the bus voltages under different conditions is considered. Simulation is done by using DIgSILENT software on the part of the 20 kV real life Sirjan distribution system. In this article, optimum location with regard to system and environmental conditions are studied in two different viewpoints.

  16. Effect of neutron irradiation on the breakdown voltage of power MOSFET's

    International Nuclear Information System (INIS)

    Hasan, S.M.Y.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

    1994-01-01

    The effect of neutron irradiation on power metal-oxide-semiconductor field effect transistor (power MOSFET) breakdown voltage has been investigated. Transistors with various breakdown voltage ratings were irradiated in a TRIGA nuclear reactor with cumulative fluence levels up to 5 x 10 14 neutrons/cm 2 (1 MeV equivalent). Noticeable increases in the breakdown voltages are observed in n-type MOSFET's after 10 13 neutrons/cm 2 and in p-type MOSFETs after 10 12 neutrons/cm 2 . An increase in breakdown voltage of as much as 30% is observed after 5 x 10 14 neutrons/cm 2 . The increase in breakdown voltage is attributed to the neutron-irradiation-induced defects which decrease the mean free path and trap majority carriers in the space charge region. The effect of positive trapped oxide charge due to concomitant gamma radiation and the effect of the termination structure on the increase in breakdown voltage are considered. An empirical model is presented to predict the value of the breakdown voltage as a function of neutron fluence

  17. Effects of an applied voltage on direct interspecies electron transfer via conductive materials for methane production.

    Science.gov (United States)

    Lee, Jung-Yeol; Park, Jeong-Hoon; Park, Hee-Deung

    2017-10-01

    Direct interspecies electron transfer (DIET) between exoelectrogenic bacteria and methanogenic archaea via conductive materials is reported as an efficient method to produce methane in anaerobic organic waste digestion. A voltage can be applied to the conductive materials to accelerate the DIET between two groups of microorganisms to produce methane. To evaluate this hypothesis, two sets of anaerobic serum bottles with and without applied voltage were used with a pair of graphite rods as conductive materials to facilitate DIET. Initially, the methane production rate was similar between the two sets of serum bottles, and later the serum bottles with an applied voltage of 0.39V showed a 168% higher methane production rate than serum bottles without an applied voltage. In cyclic voltammograms, the characteristic redox peaks for hydrogen and acetate oxidation were identified in the serum bottles with an applied voltage. In the microbial community analyses, hydrogenotrophic methanogens (e.g. Methanobacterium) were observed to be abundant in serum bottles with an applied voltage, while methanogens utilizing carbon dioxide (e.g., Methanosaeta and Methanosarcina) were dominant in serum bottles without an applied voltage. Taken together, the applied voltage on conductive materials might not be effective to promote DIET in methane production. Instead, it appeared to generate a condition for hydrogenotrophic methanogenesis. Copyright © 2017 Elsevier Ltd. All rights reserved.

  18. Capacitively coupled radio-frequency plasmas excited by tailored voltage waveforms

    International Nuclear Information System (INIS)

    Lafleur, T; Delattre, P A; Booth, J P; Johnson, E V

    2013-01-01

    By applying certain types of ‘tailored’ voltage waveforms (TVWs) to capacitively coupled plasmas, a dc self-bias and an asymmetric plasma response can be produced, even in geometrically symmetric reactors. Furthermore, these arbitrary applied waveforms can produce a number of interesting phenomena that are not present in typical single-frequency sinusoidal discharges. This electrical asymmetry effect presents emerging possibilities for the improved control of the ion energy and ion flux in these systems; parameters of vital importance to both etching and deposition applications for materials processing. With a combined research approach utilizing both experimental measurements, and particle-in-cell simulations, we review and extend recent investigations that study a particular class of TVW. The waveforms used have a pulse-type shape and are composed of a varying number of harmonic frequencies. This allows a strong self-bias to be produced, and causes most of the applied voltage to be dropped across a single sheath. Additionally, decreasing the pulse width (by increasing the number of harmonics), allows the plasma density and ion flux to be increased. Simulation and experimental results both demonstrate that this type of waveform can be used to separately control the ion flux and ion energy, while still producing a uniform plasma over large area (50 cm diameter) rf electrodes. (paper)

  19. Project resumes: biological effects from electric fields associated with high-voltage transmission lines

    Energy Technology Data Exchange (ETDEWEB)

    None

    1980-01-01

    Abstracts of research projects are presented in the following areas: measurements and special facilities; cellular and subcellular studies; physiology; behavior; environmental effects; modeling, scaling and dosimetry; and high voltage direct current. (ACR)

  20. Numerical analysis on the effect of voltage change on removing condensed water inside the GDL of a PEM fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Nam Woo [Fuel Cell Technology Development Team, Eco-Technology Center, Hyundai-Kia Motors, Yongin (Korea, Republic of); Kim, Young Sang; Kim, Min Soo [Dept. of Mechanical and Aerospace Engineering, Seoul National University, Seoul (Korea, Republic of); Kim, Min Sung [School of Energy Systems Engineering, Chung-Ang University, Seoul (Korea, Republic of)

    2016-09-15

    Decreasing the voltage of a fuel cell through hydrogen mixing or using low-air stoichiometry ratio is beneficial to remove condensed water inside GDL under flooding condition. In this study, the effect of voltage level of a fuel cell on water distribution in GDL under flooding condition was numerically analyzed. Water content in GDL was dependent on the voltage level of a fuel cell, that is, the water content was low when the cell voltage was maintained low. The effect of voltage change under flooding condition was also simulated. The flow rate of condensed water inside GDL considerably increased immediately after decreasing the cell voltage. The oxygen concentration in the catalyst layer was increased by decreasing the voltage of the fuel cell. Consequently, the cell voltage was recovered. Therefore, decreasing cell voltage under flooding condition can facilitate removal of condensed water in GDL.

  1. Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-12

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  2. Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-01

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  3. Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

    International Nuclear Information System (INIS)

    Lytvynenko, Ia.M.; Hauet, T.; Montaigne, F.; Bibyk, V.V.; Andrieu, S.

    2015-01-01

    Interplay between voltage-induced magnetic anisotropy transition and voltage-induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems. - Highlights: • Voltage-induced time dependence of resistance is studied in epitaxial Fe/MgO/Fe. • Resistance change is not related to the bottom Fe/MgO interface. • The effect is thermally activated with an energy barrier of the order of 0.2 eV height

  4. Effect of unbalanced voltage on windings temperature, operational life and load carrying capacity of induction machine

    Energy Technology Data Exchange (ETDEWEB)

    Gnacinski, P. [Gdynia Maritime University, Department of Ship Electrical Power Engineering, Morska Street 83, 81-225 Gdynia (Poland)

    2008-04-15

    This paper investigates the influence of the CVUF angle on the windings temperature rise and the derating factor of an induction machine supplied with unbalanced voltage. The effect of simultaneous voltage unbalance and harmonics on its operational life is analyzed as well. The results of calculations and experimental investigations are presented for two induction cage machines of rated power 3 and 5.5 kW. (author)

  5. The effect of external visible light on the breakdown voltage of a long discharge tube

    Science.gov (United States)

    Shishpanov, A. I.; Ionikh, Yu. Z.; Meshchanov, A. V.

    2016-06-01

    The breakdown characteristics of a discharge tube with a configuration typical of gas-discharge light sources and electric-discharge lasers (a so-called "long discharge tube") filled with argon or helium at a pressure of 1 Torr have been investigated. A breakdown has been implemented using positive and negative voltage pulses with a linear leading edge having a slope dU/ dt ~ 10-107 V/s. Visible light from an external source (halogen incandescent lamp) is found to affect the breakdown characteristics. The dependences of the dynamic breakdown voltage of the tube on dU/ dt and on the incident light intensity are measured. The breakdown voltage is found to decrease under irradiation of the high-voltage anode of the tube in a wide range of dU/ dt. A dependence of the effect magnitude on the light intensity and spectrum is obtained. Possible physical mechanisms of this phenomenon are discussed.

  6. Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

    International Nuclear Information System (INIS)

    Lotfi, E; Rezania, H; Arghavaninia, B; Yarmohammadi, M

    2016-01-01

    We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength. (paper)

  7. Effects of Voltage-Gated K+ Channel on Cell Proliferation in Multiple Myeloma

    Directory of Open Access Journals (Sweden)

    Wei Wang

    2014-01-01

    Full Text Available Objective. To study the effects and underlying mechanisms of voltage-gated K+ channels on the proliferation of multiple myeloma cells. Methods. RPMI-8226 MM cell line was used for the experiments. Voltage-gated K+ currents and the resting potential were recorded by whole-cell patch-clamp technique. RT-PCR detected Kv channel mRNA expression. Cell viability was analyzed with MTT assay. Cell counting system was employed to monitor cell proliferation. DNA contents and cell volume were analyzed by flow cytometry. Results. Currents recorded in RPMI-8226 cells were confirmed to be voltage-gated K+ channels. A high level of Kv1.3 mRNA was detected but no Kv3.1 mRNA was detected in RPMI-8226 cells. Voltage-gated K+ channel blocker 4-aminopyridine (4-AP (2 mM depolarized the resting potential from −42 ± 1.7 mV to −31.8 ± 2.8 mV (P0.05. Conclusions. In RPMI-8226, voltage-gated K+ channels are involved in proliferation and cell cycle progression its influence on the resting potential and cell volume may be responsible for this process; the inhibitory effect of the voltage-gated K+ channel blocker on RPMI-8226 cell proliferation is a phase-specific event.

  8. Research of the voltage and current stabilization processes by using the silicon field-effect transistor

    International Nuclear Information System (INIS)

    Karimov, A.V.; Yodgorova, D.M.; Kamanov, B.M.; Giyasova, F.A.; Yakudov, A.A.

    2012-01-01

    The silicon field-effect transistors were investigated to use in circuits for stabilization of current and voltage. As in gallium arsenide field-effect transistors, in silicon field-effect transistors with p-n-junction a new mechanism of saturation of the drain current is experimentally found out due to both transverse and longitudinal compression of channel by additional resistance between the source and the gate of the transistor. The criteria for evaluating the coefficients of stabilization of transient current suppressors and voltage stabilizator based on the field-effect transistor are considered. (authors)

  9. Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

    KAUST Repository

    Shaikh, Parvez Abdul Ajij

    2016-08-16

    Schottky junctions formed between semiconductors and metal contacts are ubiquitous in modern electronic and optoelectronic devices. Here we report on the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single crystals. It is found that light illumination can significantly increase the dielectric constant of perovskite junctions by 2300%. Furthermore, such Pt/perovskite junctions are used to fabricate self-biased photodetectors. A photodetectivity of 1.4 × 1010 Jones is obtained at zero bias, which increases to 7.1 × 1011 Jones at a bias of +3 V, and the photodetectivity remains almost constant in a wide range of light intensity. These devices also exhibit fast responses with a rising time of 70 μs and a falling time of 150 μs. As a result of the high crystal quality and low defect density, such single-crystal photodetectors show stable performance after storage in air for over 45 days. Our results suggest that hybrid perovskite single crystals provide a new platform to develop promising optoelectronic applications. © 2016 The Royal Society of Chemistry.

  10. Effect of a longitudinally applied voltage upon the growth of Zea mays seedlings

    Science.gov (United States)

    Desrosiers, M. F.; Bandurski, R. S.

    1988-01-01

    The electrical parameters that affect young seedling growth were investigated. Voltages ranging from 5 to 40 volts were applied longitudinally along the mesocotyl region of 4-day old Zea mays L. (cv Silver Queen) seedlings for periods of 3 or 4 hours. It was determined that: (a) making the tips of the seedlings electrically positive relative to the base strongly inhibited shoot growth at 5 volts, whereas the reverse polarity had no effect; (b) at higher voltages, making the tip of the seedlings negative caused less growth inhibition than the reverse polarity at each voltage level; (c) the higher the applied voltage the greater the degree of inhibition; and, (d) the more growth inhibition experienced by the plants the poorer, and slower, their recovery. Previous observations of a relationship between the amount of free indole-3-acetic acid in the mesocotyl cortex and the growth rate of the mesocotyl and of gravitropism-induced movement of labeled indole-3-acetic acid from the seed to the shoot lead to the prediction of a voltage-dependent gating of the movement of indole-3-acetic acid from the stele to the cortex. This provided the basis for attempting to alter the growth rate of seedlings by means of an applied voltage.

  11. Effective high voltage at X-ray tube in hard X-ray chest imaging

    International Nuclear Information System (INIS)

    Klein, J.

    1987-01-01

    The FRG standard TGL 36 661 (March 1980) for synoptical chest pictures of large size in adults specifies the 120 kV voltage at the X-ray tube together with maximal, 100% use of the capacity of the tube (hard picture, short exposure time). By means of circular recording and by measuring the high voltage at the X-ray tube it was quantitatively shown that the effective voltage during exposure is (according to the exposure time and the attenuation phase of the generator) always lower than the set-up voltage of 120 kV. This phenomenon is the more marked the shorter the actual exposure time in comparison with the attenuation phase of the generator. The typical characteristic of a hard X-ray chest picture is thus not given only by the setting-up of voltage. The impact of the reduction in voltage is thus quantitatively shown also from the aspect of the radiation burden for the patient. (author). 7 figs., 8 refs

  12. The effect of random dopant fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

    International Nuclear Information System (INIS)

    Rezapour, Arash; Rezapour, Pegah

    2015-01-01

    We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel. (paper)

  13. Threshold voltage roll-off modelling of bilayer graphene field-effect transistors

    International Nuclear Information System (INIS)

    Saeidmanesh, M; Ismail, Razali; Khaledian, M; Karimi, H; Akbari, E

    2013-01-01

    An analytical model is presented for threshold voltage roll-off of double gate bilayer graphene field-effect transistors. To this end, threshold voltage models of short- and long-channel states have been developed. In the short-channel case, front and back gate potential distributions have been modelled and used. In addition, the tunnelling probability is modelled and its effect is taken into consideration in the potential distribution model. To evaluate the accuracy of the potential model, FlexPDE software is employed with proper boundary conditions and a good agreement is observed. Using the proposed models, the effect of several structural parameters on the threshold voltage and its roll-off are studied at room temperature. (paper)

  14. Effects of a low-voltage static electric field on energy metabolism in astrocytes.

    Science.gov (United States)

    Huang, R; Peng, L; Hertz, L

    1997-01-01

    Mouse astrocytes (glial cells) in primary cultures were exposed to a low-voltage static DC electric field with no current flow and thus with no generation of magnetic fields. The electric field altered the rate of glycolysis, measured by 2-deoxyglucose accumulation. The magnitude and direction of this effect depended on the polarization of the field and the applied voltage. The maximum effect was an increase of approximately 30%, which occurred with field across the cells at an intensity that can be calculated to be 0.3 mV/cm or less. Reversal of the polarization converted the stimulation to a small but statistically significant inhibition.

  15. Dose-rate effects of low-dropout voltage regulator at various biases

    International Nuclear Information System (INIS)

    Wang Yiyuan; Zheng Yuzhan; Gao Bo; Chen Rui; Fei Wuxiong; Lu Wu; Ren Diyuan

    2010-01-01

    A low-dropout voltage regulator, LM2941, was irradiated by 60 Co γ-rays at various dose rates and biases for investigating the total dose and dose rate effects. The radiation responses show that the key electrical parameters, including its output and dropout voltage, and the maximum output current, are sensitive to total dose and dose rates, and are significantly degraded at low dose rate and zero bias. The integrated circuits damage change with the dose rates and biases, and the dose-rate effects are relative to its electric field. (authors)

  16. Proximity effects of high voltage electric power transmission lines on ...

    African Journals Online (AJOL)

    Yomi

    2010-08-18

    Aug 18, 2010 ... transmission lines on ornamental plant growth. Zeki Demir ... The effects of proximity to power-line on specific leaf area and seedling dbh were tested .... during vegetation season is about 72% and common wind blow.

  17. Effect of actuating voltage and discharge gap on plasma assisted detonation initiation process

    Science.gov (United States)

    Siyin, ZHOU; Xueke, CHE; Wansheng, NIE; Di, WANG

    2018-06-01

    The influence of actuating voltage and discharge gap on plasma assisted detonation initiation by alternating current dielectric barrier discharge was studied in detail. A loose coupling method was used to simulate the detonation initiation process of a hydrogen–oxygen mixture in a detonation tube under different actuating voltage amplitudes and discharge gap sizes. Both the discharge products and the detonation forming process assisted by the plasma were analyzed. It was found that the patterns of the temporal and spatial distributions of discharge products in one cycle keep unchanged as changing the two discharge operating parameters. However, the adoption of a higher actuating voltage leads to a higher active species concentration within the discharge zone, and atom H is the most sensitive to the variations of the actuating voltage amplitude among the given species. Adopting a larger discharge gap results in a lower concentration of the active species, and all species have the same sensitivity to the variations of the gap. With respect to the reaction flow of the detonation tube, the corresponding deflagration to detonation transition (DDT) time and distance become slightly longer when a higher actuating voltage is chosen. The acceleration effect of plasma is more prominent with a smaller discharge gap, and the benefit builds gradually throughout the DDT process. Generally, these two control parameters have little effect on the amplitude of the flow field parameters, and they do not alter the combustion degree within the reaction zone.

  18. Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

    Science.gov (United States)

    Zhong, Donglai; Zhao, Chenyi; Liu, Lijun; Zhang, Zhiyong; Peng, Lian-Mao

    2018-04-01

    In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from -1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

  19. Effects of symmetrical voltage sags on squirrel-cage induction motors

    Energy Technology Data Exchange (ETDEWEB)

    Pedra, Joaquin; Sainz, Luis; Corcoles, Felipe [Department of Electrical Engineering, ETSEIB-UPC, Av. Diagonal, 647, 08028 Barcelona (Spain)

    2007-10-15

    This paper analyzes the symmetrical voltage sag consequences on the induction motor behavior when single- and double-cage models are considered, namely current and torque peaks, and speed loss. These effects depend on several variables like sag type, duration and depth. Voltage sag effects are studied by using single- and double-cage models for three motors of different rated power. The double-cage model always predicts torque and current peaks higher than those of the single-cage model. The single-cage model predicts that voltage sags can produce motor instability, whereas the double-cage model is always stable. Therefore, the double-cage model must be used for the simulation of the squirrel-cage induction motor, because the single-cage model can give erroneous results in some situations. (author)

  20. Gigantic transverse voltage induced via off-diagonal thermoelectric effect in CaxCoO2 thin films

    Science.gov (United States)

    Takahashi, Kouhei; Kanno, Tsutomu; Sakai, Akihiro; Adachi, Hideaki; Yamada, Yuka

    2010-07-01

    Gigantic transverse voltages exceeding several tens volt have been observed in CaxCoO2 thin films with tilted c-axis orientation upon illumination of nanosecond laser pulses. The voltage signals were highly anisotropic within the film surface showing close relation with the c-axis tilt direction. The magnitude and the decay time of the voltage strongly depended on the film thickness. These results confirm that the large laser-induced voltage originates from a phenomenon termed the off-diagonal thermoelectric effect, by which a film out-of-plane temperature gradient leads to generation of a film in-plane voltage.

  1. Measurement of spin pumping voltage separated from extrinsic microwave effects

    International Nuclear Information System (INIS)

    Iguchi, Ryo; Saitoh, Eiji

    2017-01-01

    Conversions between spin and charge currents are core technologies in recent spintronics. In this article, we provide methods for estimating inverse spin Hall effects (ISHEs) induced by using microwave-driven spin pumping (SP) as a spin-current generator. ISHE and SP induce an electromotive force at the ferromagnetic or spin-wave resonance, which offers a valuable electric method of studying spin physics in materials. At the resonance, a microwave for exciting the magnetization dynamics induces an additional electromotive force via rf-current rectification and thermoelectric effects. We discuss methods of separating the signals generated from such extrinsic microwave effects by controlling sample structures and configurations. These methods are helpful in performing accurate measurements on ISHE induced by SP, enabling quantitative studies on the conversion between spin and charge currents on various kinds of materials. (author)

  2. Culture modulates implicit ownership-induced self-bias in memory.

    Science.gov (United States)

    Sparks, Samuel; Cunningham, Sheila J; Kritikos, Ada

    2016-08-01

    The relation of incoming stimuli to the self implicitly determines the allocation of cognitive resources. Cultural variations in the self-concept shape cognition, but the extent is unclear because the majority of studies sample only Western participants. We report cultural differences (Asian versus Western) in ownership-induced self-bias in recognition memory for objects. In two experiments, participants allocated a series of images depicting household objects to self-owned or other-owned virtual baskets based on colour cues before completing a surprise recognition memory test for the objects. The 'other' was either a stranger or a close other. In both experiments, Western participants showed greater recognition memory accuracy for self-owned compared with other-owned objects, consistent with an independent self-construal. In Experiment 1, which required minimal attention to the owned objects, Asian participants showed no such ownership-related bias in recognition accuracy. In Experiment 2, which required attention to owned objects to move them along the screen, Asian participants again showed no overall memory advantage for self-owned items and actually exhibited higher recognition accuracy for mother-owned than self-owned objects, reversing the pattern observed for Westerners. This is consistent with an interdependent self-construal which is sensitive to the particular relationship between the self and other. Overall, our results suggest that the self acts as an organising principle for allocating cognitive resources, but that the way it is constructed depends upon cultural experience. Additionally, the manifestation of these cultural differences in self-representation depends on the allocation of attentional resources to self- and other-associated stimuli. Crown Copyright © 2016. Published by Elsevier B.V. All rights reserved.

  3. Power supply and impedance matching to drive technological radio-frequency plasmas with customized voltage waveforms.

    Science.gov (United States)

    Franek, James; Brandt, Steven; Berger, Birk; Liese, Martin; Barthel, Matthias; Schüngel, Edmund; Schulze, Julian

    2015-05-01

    We present a novel radio-frequency (RF) power supply and impedance matching to drive technological plasmas with customized voltage waveforms. It is based on a system of phase-locked RF generators that output single frequency voltage waveforms corresponding to multiple consecutive harmonics of a fundamental frequency. These signals are matched individually and combined to drive a RF plasma. Electrical filters are used to prevent parasitic interactions between the matching branches. By adjusting the harmonics' phases and voltage amplitudes individually, any voltage waveform can be approximated as a customized finite Fourier series. This RF supply system is easily adaptable to any technological plasma for industrial applications and allows the commercial utilization of process optimization based on voltage waveform tailoring for the first time. Here, this system is tested on a capacitive discharge based on three consecutive harmonics of 13.56 MHz. According to the Electrical Asymmetry Effect, tuning the phases between the applied harmonics results in an electrical control of the DC self-bias and the mean ion energy at almost constant ion flux. A comparison with the reference case of an electrically asymmetric dual-frequency discharge reveals that the control range of the mean ion energy can be significantly enlarged by using more than two consecutive harmonics.

  4. Experimental Investigation of the Effect of the Driving Voltage of an Electroadhesion Actuator.

    Science.gov (United States)

    Koh, Keng Huat; Sreekumar, M; Ponnambalam, S G

    2014-06-25

    This paper investigates the effect of driving voltage on the attachment force of an electroadhesion actuator, as the existing literature on the saturation of the adhesive force at a higher electric field is incomplete. A new type of electroadhesion actuator using normally available materials, such as aluminum foil, PVC tape and a silicone rubber sheet used for keyboard protection, has been developed with a simple layered structure that is capable of developing adhesive force consistently. The developed actuator is subjected to the experiment for the evaluation of various test surfaces; aluminum, brick, ceramic, concrete and glass. The driving high voltage is varied in steps to determine the characteristics of the output holding force. Results show a quadratic relation between F (adhesion force) and V (driving voltage) within the 2 kV range. After this range, the F - V responses consistently show a saturation trend at high electric fields. Next, the concept of the leakage current that can occur in the dielectric material and the corona discharge through air has been introduced. Results show that the voltage level, which corresponds to the beginning of the supply current, matches well with the beginning of the force saturation. With the confirmation of this hypothesis, a working model for electroadhesion actuation is proposed. Based on the experimental results, it is proposed that such a kind of actuator can be driven within a range of optimum high voltage to remain electrically efficient. This practice is recommended for the future design, development and characterization of electroadhesion actuators for robotic applications.

  5. The Effect of Image Potential on the Current-Voltage Characteristics of a Ferritin-layer

    Directory of Open Access Journals (Sweden)

    Eunjung Bang

    2010-11-01

    Full Text Available Considering for the concept of power storage systems, such as those used to supply power to microelectronic devices, ferritins have aroused a lot of interests for applications in bioelectrochemical devices. And electron transfer rates from the proteins to electrode surface are key determinants of overall performance and efficiency of the ferritin-based devices. Here we have investigated the electron transport mechanism of ferritin layer which was immobilized on an Au electrode. The current-voltage (I-V curves are obtained by a conductive atomic force microscope (c-AFM as a function of contact area between AFM tip and the ferritin layer. In the low voltage region, I-V curves are affected by both Fowler-Nordheim tunneling and image force. On the other hand, the experimental results are consistent with a Simmons model in a high voltage region, indicating that, as the voltage increases, the image potential has a dominant effect on the electron transport mechanism. These results are attributed to the film-like character of the ferritin layer, which generates an image potential to lower the barrier height in proportion to the voltage increment.

  6. A simple method to increase effective PMT gain by amplifier circuit powered from voltage divider

    International Nuclear Information System (INIS)

    Popov, V.; Majewski, S.; Wojtsekhowski, B.; Guerin, D

    2001-01-01

    A novel concept is introduced of additional effective signal amplification by employing a dedicated circuit to process anode or dynode signals prior to sending them through a standard 50 /spl Omega/ line/cable. The circuit is entirely powered by the current flowing through the base voltage divider. Additional gain factors of 2-10 were easily achieved with preserved operation speed and rate capability up to several MHz. This additional signal boost can be used in many applications where higher gain and/or lower PMT operational voltages are desirable. For example, in the case of a PMT employed in a low input light signal (such as a Cherenkov counter), this technique will permit operation at a lower voltage and, therefore, will result in better operational PMT stability and longer PMT lifetime. At present, two experimental set-ups at Jefferson Lab are using PMT bases using this concept

  7. Effect of solar-cell junction geometry on open-circuit voltage

    Science.gov (United States)

    Weizer, V. G.; Godlewski, M. P.

    1985-01-01

    Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

  8. The humidity effect on the breakdown voltage characteristics and the transport parameters of air

    International Nuclear Information System (INIS)

    Radmilović-Radjenović, M.; Radjenović, B.; Nikitović, Ž.; Matejčik, Š.; Klas, M.

    2012-01-01

    This paper contains experimental results for the direct current (DC) breakdown voltages and calculated transport parameters for dry, synthetic and ambient air. The breakdown voltage curves for dry, ambient and synthetic air at the gap size of 100μm are very similar. The differences between them are much more pronounced at the interelectrode separation of 20μm, especially at the right hand branch of the breakdown voltage curves. On the other hand, the effective yields γ for dry and synthetic air are in disagreement at lower values of the E/p. Results of calculations based on the Two Term Approximation indicate that the humidity has no a great influence on the transport parameters at all range of the reduce field E/N.

  9. Investigation about decoupling capacitors of PMT voltage divider effects on neutron-gamma discrimination

    International Nuclear Information System (INIS)

    Divani, Nazila; Firoozabadi, Mohammad M.; Bayat, Esmail

    2014-01-01

    Scintillators are almost used in any nuclear laboratory. These detectors combine of scintillation materials, PMT and a voltage divider. Voltage dividers are different in resistive ladder design. But the effect of decoupling capacitors and damping resistors haven’t discussed yet. In this paper at first a good equilibrium circuit designed for PMT, and it was used for investigating about capacitors and resistors in much manner. Results show that decoupling capacitors have great effect on PMT output pulses. In this research, it was tried to investigate the effect of Capacitor’s value and places on PMT voltage divider in Neutron-Gamma discrimination capability. Therefore, the voltage divider circuit for R329-02 Hamamatsu PMT was made and Zero Cross method used for neutron-gamma discrimination. The neutron source was a 20Ci Am-Be. Anode and Dynode pulses and discrimination spectrum were saved. The results showed that the pulse height and discrimination quality change with the value and setting of capacitors

  10. High Voltage Solar Array Arc Testing for a Direct Drive Hall Effect Thruster System

    Science.gov (United States)

    Schneider, Todd; Carruth, M. R., Jr.; Vaughn, J. A.; Jongeward, G. A.; Mikellides, I. G.; Ferguson, D.; Kerslake, T. W.; Peterson, T.; Snyder, D.; Hoskins, A.

    2004-01-01

    The deleterious effects of spacecraft charging are well known, particularly when the charging leads to arc events. The damage that results from arcing can severely reduce system lifetime and even cause critical system failures. On a primary spacecraft system such as a solar array, there is very little tolerance for arcing. Motivated by these concerns, an experimental investigation was undertaken to determine arc thresholds for a high voltage (200-500 V) solar array in a plasma environment. The investigation was in support of a NASA program to develop a Direct Drive Hall-Effect Thruster (D2HET) system. By directly coupling the solar array to a Hall-effect thruster, the D2HET program seeks to reduce mass, cost and complexity commonly associated with the power processing in conventional power systems. In the investigation, multiple solar array technologies and configurations were tested. The cell samples were biased to a negative voltage, with an applied potential difference between them, to imitate possible scenarios in solar array strings that could lead to damaging arcs. The samples were tested in an environment that emulated a low-energy, HET-induced plasma. Short duration trigger arcs as well as long duration sustained arcs were generated. Typical current and voltage waveforms associated with the arc events are presented. Arc thresholds are also defined in terms of voltage, current and power. The data will be used to propose a new, high-voltage (greater than 300 V) solar array design for which the likelihood of damage from arcing is minimal.

  11. Facts and feelings: Framing effects in responses to uncertainties about high-voltage power lines

    OpenAIRE

    de Vries, G.; de Bruijn, J.A.

    2017-01-01

    To ensure power supply security, electricity transmission system operators (TSOs) have to upscale high-voltage overhead power lines. However, upscaling frequently meets opposition. Opposition can be caused by uncertainties about risks and benefits and might lead to costly delays (Linder, 1995; Wiedemann, Boerner,& Claus, 2016). To minimize opposition, TSOs and related public services need to respond to these uncertainties in a credible and convincing (effective) way. Effective risk commun...

  12. The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

    International Nuclear Information System (INIS)

    Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

    2013-01-01

    The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

  13. Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

    Energy Technology Data Exchange (ETDEWEB)

    Prasetyaningrum, A., E-mail: ajiprasetyaningrum@gmail.com; Ratnawati,; Jos, B. [Department of Chemical Engineering, Faculty of Engineering, Diponegoro University Jl. Prof. H. Soedarto Tembalang, Semarang, Central Java, Indonesia, 50276 (Indonesia)

    2015-12-29

    Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O{sub 3}) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flow rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV.

  14. Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

    International Nuclear Information System (INIS)

    Prasetyaningrum, A.; Ratnawati,; Jos, B.

    2015-01-01

    Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O 3 ) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flow rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV

  15. Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

    Science.gov (United States)

    Prasetyaningrum, A.; Ratnawati, Jos, B.

    2015-12-01

    Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O3) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flow rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV.

  16. Lowering effect of radioactive irradiation on breakdown voltage and electron avalanche pulse characteristics

    International Nuclear Information System (INIS)

    Kawahashi, Akira; Nakano, Toru; Hosokawa, Tatsuzo; Miyoshi, Yosinori.

    1976-01-01

    In the time resolving measurement of the growing process and breakdown of electron avalanche in a gap of uniform electric field, the phenomenon that DC breakdown voltage slightly lowered was observed when β ray was irradiated as the initial electron source, as compared with unirradiated condition. Beta source used is 90 Sr- 90 Y of 2 mCi in radiative equilibrium. The experimental results and the examination are described in detail. In brief, the remarkable superposition of succeeding avalanche pulse over the preceeding avalanche pulse waveform was observed under the gap condition in which the breakdown voltage decreased in β-ray irradiation. Thus this superposition of avalanche pulses is considered as one of the causes of the breakdown voltage reduction. When β source is used as the initial electron source, the number of supplied initial electrons is very large as compared with unity, and at the same time, a great number of initial electrons can be supplied within the diffusion radius r of avalanche. Then the effect of initial electron number n 0 was considered by employing a diagram for breakdown scheme. The transition from Townsend type breakdown to streamer type breakdown occurs owing to increasing n 0 , and in that condition, the breakdown voltage lowers slightly. (Wakatsuki, Y)

  17. Effect of state feedback coupling on the transient performance of voltage source inverters with LC filter

    DEFF Research Database (Denmark)

    Federico, de Bosio; Pastorelli, Michele; Antonio DeSouza Ribeiro, Luiz

    2016-01-01

    State feedback coupling between the capacitor voltage and inductor current deteriorates notably the performance during transients of voltage and current regulators in stand-alone systems based on voltage source inverters. A decoupling technique is proposed, considering the limitations introduced...

  18. Experimental Investigation of the Effect of the Driving Voltage of an Electroadhesion Actuator

    Directory of Open Access Journals (Sweden)

    Keng Huat Koh

    2014-06-01

    Full Text Available This paper investigates the effect of driving voltage on the attachment force of an electroadhesion actuator, as the existing literature on the saturation of the adhesive force at a higher electric field is incomplete. A new type of electroadhesion actuator using normally available materials, such as aluminum foil, PVC tape and a silicone rubber sheet used for keyboard protection, has been developed with a simple layered structure that is capable of developing adhesive force consistently. The developed actuator is subjected to the experiment for the evaluation of various test surfaces; aluminum, brick, ceramic, concrete and glass. The driving high voltage is varied in steps to determine the characteristics of the output holding force. Results show a quadratic relation between F (adhesion force and V (driving voltage within the 2 kV range. After this range, the F-V responses consistently show a saturation trend at high electric fields. Next, the concept of the leakage current that can occur in the dielectric material and the corona discharge through air has been introduced. Results show that the voltage level, which corresponds to the beginning of the supply current, matches well with the beginning of the force saturation. With the confirmation of this hypothesis, a working model for electroadhesion actuation is proposed. Based on the experimental results, it is proposed that such a kind of actuator can be driven within a range of optimum high voltage to remain electrically efficient. This practice is recommended for the future design, development and characterization of electroadhesion actuators for robotic applications.

  19. Simulation of subnanosecond streamers in atmospheric-pressure air: Effects of polarity of applied voltage pulse

    Energy Technology Data Exchange (ETDEWEB)

    Babaeva, N. Yu.; Naidis, G. V. [Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow 125412 (Russian Federation)

    2016-08-15

    Results of simulation of subnanosecond streamer propagation in corona gap configuration, obtained in the framework of 2D fluid model, are presented. Effects related with the polarity of a voltage pulse applied to the stressed electrode are discussed. It is argued that these effects (dependence of the discharge current and propagation velocity on the polarity of applied voltage) observed in experiments can be attributed to the difference in initial (preceding the streamer formation) distributions of charged species inside the gap. This difference can be caused by preionization (at negative polarity) of the gas inside the discharge gap by runaway electrons. Calculated streamers have large widths (up to 1 cm) and move with velocities in the range of 10{sup 9}–10{sup 10 }cm s{sup −1}, similar to experimental data.

  20. Effect of Turkish propolis extracts on expression of voltage-gated ...

    African Journals Online (AJOL)

    Purpose: To investigate the effect of dimethyl sulfoxide (DMSO) and water extracts of Turkish propolis (WEP) on mRNA expression of Nav 1.5 and 1.7 α isoforms of Voltage-Gated Sodium Channel (VGSC) proteins in PC-3 human prostate cancer cells. Methods: DMSO and WEP (20 μg/mL each) were incubated for 24 h with ...

  1. The effect of a defective BSF layer on solar cell open circuit voltage. [Back Surface Field

    Science.gov (United States)

    Weizer, V. G.

    1985-01-01

    A straightforward analysis of special limiting cases has permitted the determination of the range of possible open circuit voltage losses due to a defective BSF (back surface field) layer. An important result of the analysis is the finding that it is possible to have a fully effective BSF region, regardless of the spatial distribution of the defective areas, as long as the total defective area is reduced below certain limits. Distributed defects were found to be much more harmful than lumped defects.

  2. Effect of voltage on the characteristics of magnesium-lanthanum deposits synthesized by an electrodeposition process

    Energy Technology Data Exchange (ETDEWEB)

    Sahli, M. [Laboratoire de Physique Energétique, Université de Constantine 1 (Algeria); Chetehouna, K.; Gascoin, N. [INSA-CVL, Univ. Orléans, PRISME, EA 4229, F-18020, Bourges (France); Bellel, N. [Laboratoire de Physique Energétique, Université de Constantine 1 (Algeria); Tadini, P., E-mail: tadini.pietro@gmail.com [INSA-CVL, Univ. Orléans, PRISME, EA 4229, F-18020, Bourges (France)

    2017-04-15

    This work deals with the characterization of magnesium-lanthanum powders deposits produced with an electrodeposition technique using an aqueous solution based on magnesium chloride and lanthanum(III) nitrate. In recent years, the interest for magnesium-based alloys is growing due to their potential use as solid state systems for hydrogen storage. This work is a preliminary study on the synthesis of magnesium-lanthanum powders oriented to their later evaluation in systems for hydrogen storage. Magnesium and Lanthanum are deposited on a copper plate used as a cathode. Chemical composition, structure and morphology are investigated by EDS, XRD, FTIR and SEM. The effect of voltage on powders characteristics is studied considering three values (3, 3.5 and 4 V). EDS analysis shows the presence of three major elements (Mg, La and O) with a little amount of Cl. The weight percentages of Mg and O increase whereas the one of La decreases with the growth of voltage. Morphological characterization reveals that heterogeneous chemical structures are formed on the surface of the electrode and the size of aggregates decreases with the increase of voltage. From the results of X-ray analysis the deposits reveal the significant presence of two phases: Mg(OH){sub 2} and La(OH){sub 3}. The peaks originating from the Mg(OH){sub 2} phase has a non-monotonic behavior and those of La(OH){sub 3} phase increase with the increase of voltage. FTIR analysis confirms the presence of the two phases identified in XRD diffractograms and exhibits that their corresponding transmittance values increase for higher voltage values. - Highlights: • Synthesis of magnesium-lanthanum deposits by an electrodeposition process. • Voltage effect is investigated using different physicochemical analysis techniques (EDS, XRD, FTIR and SEM). • The EDS analysis shows the presence of three major elements (Mg, La and O) and a little amount of Cl. • Two phases, namely Mg(OH){sub 2} and La(OH){sub 3} are

  3. Voltage Effect in Holograms of Polyvinyl Alcohol with FeCl3

    Directory of Open Access Journals (Sweden)

    Arturo Olivares-Pérez

    2014-03-01

    Full Text Available We show experimentally that the metallic salt, FeCl3, at different concentrations, provides photosensitivity and conductivity characteristics with poly(vinyl alcohol material. The holographic recording in this photosensitive material was made in real time. The effect of applied voltage on holographic diffraction gratings in the recording process and the changes in their diffraction efficiency, depending on their composition, are shown. In addition, we describe the photo-mechanism, physicochemical processes, and water condensations involved in changes of the formation of images due to applied voltage. The results suggest that polymers doped with metallic salts may have potential as inexpensive photosensitive materials that are easy to work under normal laboratory condition.

  4. Effect of electric and magnetic fields on current-voltage characteristics of a lyotropic liquid crystal

    International Nuclear Information System (INIS)

    Minasyants, M.Kh.; Badalyan, G. G.; Shahinian, A. A.

    1997-01-01

    The effect of electric and magnetic fields on current-voltage characteristics is studied for the lamellar phase in the lyotropic liquid-crystal sodium pentadecylsulfonate (SPDS)-water and lecithin-water systems. It has been found that the current-voltage characteristics of both systems have hysteresis. In the case of ionogenic SPDS, the hysteresis is formed due to ion current caused by the spatial reorientation of domains consisting of parallel lamellar fragments; in the case of lecithin, whose molecules contain dipoles, the hysteresis is formed due to the spatial reorientation of domains caused by the interaction of the resultant dipole moment of the domains with the electric field. It is shown that the introduction into lamellae of cetylpyridine bromide, which has an intrinsic magnetic moment, changes the resultant magnetic moment of domains and, thus, also the hysteresis loop of the current-voltage characteristic. The systems studied show the 'memory' effect with respect to both the electric and magnetic fields. Field-induced processes of domain reorientation were recorded by the method of small-angle x-ray scattering

  5. Bias voltage effect on electron tunneling across a junction with a ferroelectric–ferromagnetic two-phase composite barrier

    International Nuclear Information System (INIS)

    Wang Jian; Ju Sheng; Li, Z.Y.

    2012-01-01

    The effect of bias voltage on electron tunneling across a junction with a ferroelectric–ferromagnetic composite barrier is investigated theoretically. Because of the inversion symmetry breaking of the spontaneous ferroelectric polarization, bias voltage dependence of the electron tunneling shows significant differences between the positive bias and the negative one. The differences of spin filtering or tunnel magnetoresistance increase with the increasing absolute value of bias voltage. Such direction preferred electron tunneling is found intimately related with the unusual asymmetry of the electrical potential profile in two-phase composite barrier and provides a unique change to realize rectifying functions in spintronics. - Highlights: ► Electron tunneling across a ferroelectric–ferromagnetic composite barrier junction. ► TMR effect is different under the same value but opposite direction bias voltage. ► This directionality of the electron tunneling enhances with increasing bias voltage.

  6. High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

    2014-05-21

    We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

  7. Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors

    International Nuclear Information System (INIS)

    Guang-Guo, Wu; Hong-Ri, Li; Kun, Liang; Ru, Yang; De-Jun, Han; Xue-Lei, Cao; Huan-Yu, Wang; Jun-Ming, An; Xiong-Wei, Hu

    2009-01-01

    Anode Boating voltage is predicted and investigated for silicon drift detectors (SDDs) with an active area of 5 mm 2 fabricated by a double-side parallel technology. It is demonstrated that the anode Boating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode Boating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (−50 V) of the SDD. Theoretical analysis and experimental results show that the anode Boating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p + inner ring and the n + anode. A fast checking method before detector encapsulation is proposed by employing the anode Boating voltage along with checking the leakage current, potential distribution and drift properties

  8. Substrate effects in high gain, low operating voltage SnSe2 photoconductor

    Science.gov (United States)

    Krishna, Murali; Kallatt, Sangeeth; Majumdar, Kausik

    2018-01-01

    High gain photoconductive devices find wide spread applications in low intensity light detection. Ultra-thin layered materials have recently drawn a lot of attention from researchers in this regard. However, in general, a large operating voltage is required to obtain large responsivity in these devices. In addition, the characteristics are often confounded by substrate induced trap effects. Here we report multi-layer SnSe2 based photoconductive devices using two different structures: (1) SiO2 substrate supported inter-digitated electrode (IDE), and (2) suspended channel. The IDE device exhibits a responsivity of ≈ {10}3 A W-1 and ≈ 8.66× {10}4 A W-1 at operating voltages of 1 mV and 100 mV, respectively—a superior low voltage performance over existing literature on planar 2D structures. However, the responsivity reduces by more than two orders of magnitude, while the transient response improves for the suspended device—providing insights into the critical role played by the channel-substrate interface in the gain mechanism. The results, on one hand, are promising for highly sensitive photoconductive applications consuming ultra-low power, and on the other hand, show a generic methodology that could be applied to other layered material based photoconductive devices as well for extracting the intrinsic behavior.

  9. Voltage effect in PTCR ceramics: Calculation by the method of tilted energy band

    International Nuclear Information System (INIS)

    Fang Chao; Zhou Dongxiang; Gong Shuping

    2010-01-01

    A numerical model for the calculation of the electrical characteristics of donor-doped BaTiO 3 semiconducting ceramics is suggested. This paper established a differential equation about electron level on the base of Poisson equation, and solved the equation with Runge-Kutta method. Under extra electric field, electrical characteristics have been calculated by the method of tilted energy band. We have quantitatively computed the positive temperature coefficient of resistivity (PTCR) behavior of donor-doped BaTiO 3 semiconducting ceramics and its voltage effect, and further obtained non-linear current-voltage characteristics with different grain sizes at different temperature. The results pointed out that the resistance jumping is reduced with increasing electric field applied; current and voltage relation follows Ohm's law below Curie temperature, and exhibits strong non-linear above Curie temperature; the non-linear coefficient shows a maximum value at temperature the resistivity reaches maximum and with grain size closed to depletion region width. The results are compared with experimental data.

  10. The Effect of Current-Limiting Reactors on the Tripping of Short Circuits in High-Voltage Electrical Equipment

    International Nuclear Information System (INIS)

    Volkov, M. S.; Gusev, Yu. P.; Monakov, Yu. V.; Cho, Gvan Chun

    2016-01-01

    The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limiting resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed

  11. Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations.

    Science.gov (United States)

    Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

    2017-09-15

    The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

  12. Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

    Science.gov (United States)

    Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

    2017-09-01

    The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

  13. Effect of non-uniform Hall parameter on the electrode voltage drop in Faraday-type combustion MHD generators

    International Nuclear Information System (INIS)

    Gupta, G.P.; Rohatgi, V.K.

    1982-01-01

    Following a simplified approach, an expression is derived for the gas-dynamic voltage drop in a finitely segmented Faraday-type combustion MHD generator, taking into account the non-uniform Hall parameter across the channel. Combining the electrical sheath voltage drop, discussed briefly, with the gas-dynamic voltage drop, the effect of a non-uniform Hall parameter on the electrode voltage drop is studied using the theoretical and experimental input parameters of the Indian MHD channel test. The condition for the validity of the usual assumption of uniform Hall parameter across the channel is pointed out. Analysis of the measured electrode voltage drop predicts the real gas conductivity in the core to be in the range of 60 to 75 per cent of the theoretically calculated core conductivity. (author)

  14. Through thick and thin: tuning the threshold voltage in organic field-effect transistors.

    Science.gov (United States)

    Martínez Hardigree, Josué F; Katz, Howard E

    2014-04-15

    Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more

  15. Investigating the Effect of Voltage-Switching on Low-Energy Task Scheduling in Hard Real-Time Systems

    National Research Council Canada - National Science Library

    Swaminathan, Vishnu; Chakrabarty, Krishnendu

    2005-01-01

    We investigate the effect of voltage-switching on task execution times and energy consumption for dual-speed hard real-time systems, and present a new approach for scheduling workloads containing periodic tasks...

  16. Effects of detector–source distance and detector bias voltage variations on time resolution of general purpose plastic scintillation detectors

    International Nuclear Information System (INIS)

    Ermis, E.E.; Celiktas, C.

    2012-01-01

    Effects of source-detector distance and the detector bias voltage variations on time resolution of a general purpose plastic scintillation detector such as BC400 were investigated. 133 Ba and 207 Bi calibration sources with and without collimator were used in the present work. Optimum source-detector distance and bias voltage values were determined for the best time resolution by using leading edge timing method. Effect of the collimator usage on time resolution was also investigated. - Highlights: ► Effect of the source-detector distance on time spectra was investigated. ► Effect of the detector bias voltage variations on time spectra was examined. ► Optimum detector–source distance was determined for the best time resolution. ► Optimum detector bias voltage was determined for the best time resolution. ► 133 Ba and 207 Bi radioisotopes were used.

  17. Effect of pulsed voltage on electrochemical migration of tin in electronics

    DEFF Research Database (Denmark)

    Verdingovas, Vadimas; Jellesen, Morten Stendahl; Ambat, Rajan

    2015-01-01

    formation and increases the charge transferred between the electrodes over time. With increase of duty cycle, increases the anodic dissolution of tin, which was visualized using a tin ion indicator applied on the components prior to applying the voltage. The anodic dissolution of tin significantly...... respectively at 10 and 5 V, while the duty cycle and the pulse width were varied in the range of ms. The results showed that varying of pulse width at fixed duty cycle has a minor effect under investigated conditions, whereas increasing duty cycle significantly reduces the time to short due to dendrite...

  18. Effect of high-voltage impulse current on the structure and function of rabbit heart

    Directory of Open Access Journals (Sweden)

    Xin-ping XU

    2011-06-01

    Full Text Available Objective To explore the effect of high-voltage impulse current(HVIC on the structure and function of rabbit heart.Methods Sixty healthy male rabbits were involved in present study and divided into 6 groups randomly(n=10.The rabbits were then shocked using a high-voltage pulse generator with current intensity of 0,50,100,150,250 and 500mA(pulse width 100μs,duration 5s respectively.The heart rate and electrocardiogram(ECG of rabbits were detected before and 0,1,3,7,14 and 28 days after the electric shock.Moreover,the myocardial tissue of rabbits was obtained immediately and 28 days after shock to observe the pathological changes.Results Immediately after electric shock of 50 to 500mA,the heart rate of rabbit increased by different degree,and the ECG showed arrhythmia,myocardial ischemia,atrial fibrillation and atrioventricular block,and the changes recovered gradually one day later.The pathological observation showed cell swelling,separation of myofibril and sarcoplasmic condensation of Purkinje fibers immediately after electric shock of 50 to 500mA,and the changes recovered 28 days after shock.The cardiac injuries aggravated with the increasing of current intensity,especially when it exceeded 150mA,and the recovery time prolonged.Conclusion High-voltage impulse current may induce recoverable injuries on heart structure and function,and the damage effect shows a correlation with the current intensity.

  19. A simple process to obtain anisotropic self-biased magnets constituted of stacked barium ferrite single domain particles

    Science.gov (United States)

    Mattei, Jean-Luc; Le, Cong Nha; Chevalier, Alexis; Maalouf, Azar; Noutehou, Nathan; Queffelec, Patrick; Laur, Vincent

    2018-04-01

    An efficient and inexpensive process is presented that produces highly oriented bulk compacts made of BaM particles. Barium hexaferrite particles (BaM, nominal composition BaFe11O19) were prepared by a chemical coprecipitation method, using different rates and types of precipitating agents (NaOH and Na2CO3). It was demonstrated that when a large excess of Na2CO3 is used, a noteworthy packing of hexagonal BaM platelets is obtained, after mechanical compaction and firing at moderate temperature (1140 °C), without including any more steps than those required for a conventional sintering process. The hysteresis loop displays a very competitive squareness of 0.88 (normalized remanent magnetization) and a coercivity of 215 kA/m, which make this BaM bulk ferrite suitable for self-biased applications.

  20. Impact of scaling voltage and size on the performance of Side-contacted Field Effect Diode

    Science.gov (United States)

    Touchaei, Behnam Jafari; Manavizadeh, Negin

    2018-05-01

    Side-contacted Fild Effect Diode (S-FED), with low leakage current and high Ion/Ioff ratio, has been recently introduced to suppress short channel effects in nanoscale regime. The voltage and size scalability of S-FEDs and effects on the power consumption, propagation delay time, and power delay product have been studied in this article. The most attractive properties are related to channel length to channel thickness ratio in the S-FED which reduces in comparison with MOSFET significantly, while gates control over the channel improve and the off-state current reduces dramatically. This promising advantage is not only capable to improve important S-FED's characteristics such as subthreshold slope but also eliminate Latch-up and floating body effect.

  1. Research into the Effect of Supercapacitor Terminal Voltage on Regenerative Suspension Energy-Regeneration and Dynamic Performance

    Directory of Open Access Journals (Sweden)

    Ruochen Wang

    2017-01-01

    Full Text Available To study the effect of supercapacitor initial terminal voltage on the regenerative and semiactive suspension energy-regeneration and dynamic performance, firstly, the relationship between supercapacitor terminal voltage and linear motor electromagnetic damping force and that between supercapacitor terminal voltage and recycled energy by the supercapacitor in one single switching period were both analyzed. The result shows that the linear motor electromagnetic damping force is irrelevant to the supercapacitor terminal voltage, and the recycled energy by the supercapacitor reaches the maximum when initial terminal voltage of the supercapacitor equals output terminal voltage of the linear motor. Then, performances of system dynamics and energy-regeneration were studied as the supercapacitor initial terminal voltage varied in situations of B level and C level road. The result showed that recycled energy by the supercapacitor increased at first and then decreased while the dynamic performance had no obvious change. On the basis of previous study, a mode-switching control strategy of supercapacitor for the regenerative and semiactive suspension system was proposed, and the mode-switching rule was built. According to simulation and experiment results, the system energy-regeneration efficiency can be increased by utilizing the control strategy without influencing suspension dynamic performance, which is highly valuable to practical engineering.

  2. Effect of plasma voltage on sulfurization of α-MoO{sub 3} nanostructured thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Prabhat, E-mail: prabhat89k@gmail.com; Singh, Megha; Sharma, Rabindar K.; Reddy, G. B. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, Hauz Khas, New Delhi-110016 (India)

    2016-05-06

    In this report, the effect of plasma voltage on plasma assisted sulfurization (PAS) of vertically aligned molybdenum trioxide (α- MoO{sub 3}) nanoflakes (NFs) on glass substrates has been studied systematically. MoO{sub 3} NFs were deposited using plasma assisted sublimation process. These nanoflakes were subjected to H{sub 2}S/Ar plasma at two different plasma voltages 600 and 1000 volts; to study the effect of plasma ionization on degree of sulfurization of MoO{sub 3} into MoS{sub 2}. XRD and Raman analysis show that film sulfurized at 1000 volts have relatively higher degree of conversion into MoS{sub 2}, as more intense peaks of MoS{sub 2} and MoO{sub 2} are obtained than that sulfurized at 600 volts. HRTEM of sulfurized film shows that outer surface of nanoflake has been converted into MoS{sub 2} (4-5 monolayers). Meanwhile, MoO{sub 3} was reduced into MoO{sub 2} as confirmed by XRD and Raman results. All the observed results are well in consonance with each other.

  3. Effects of contrast improvement on high voltage rectification type of x-ray diagnostic apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hoo Min; Yoon, Joon [Dept. of Radiological technology, Dongnam Health University, Suwon (Korea, Republic of); Kim, Hyun Ju [Dept. of Radiology, Soonchunhyang University Hospital Buchen, Bucheon (Korea, Republic of)

    2014-09-15

    The purpose of this study was to analyze the effect on the selectivity on of high-voltage rectification device that measured the performance of the grid, and the contrast improvement ability (K factor) by measuring the scattered radiation content of the transmitted X-rays. The scattered radiation generated when the X-ray flux comes from the diagnostic X-ray generator that passes through an object. Targeting four different rectifications of X-ray generators, the mean value of the tube voltage and the tube current was measured in order to maximize the accuracy of the generating power dose within the same exposure condition. Using fluorescence meter, the content of the scattered rays that are transmitted through the acrylic was measured depending on the grid usage. When grid is not used, the content of the scattered rays was the lowest (34.158%) with the single-phase rectifier, was increased with the inverter rectifier (37.043%) and the three-phase 24-peak rectification method (37.447%). The difference of the scattered radiation content of each device was significant from the lowest 0.404% to the highest 3.289% while using 8:1 grid, the content of the scattered ray was the lowest with the single content of the scattered ray was the lowest with the single-phase rectifier (18.258%), was increased with the rectifier (25.502%) and the 24-peaks rectification (24.217%). Furthermore, there was difference up to content 7.244% to the lowest content 1.285% within three-phase 24-peaks rectification, inverter rectifications, and single-phase rectifier depending on the selectivity of the grid. Drawn from the statistical analysis, there was a similar relationship between the contrast improvement factor and the K factor. As a result, the grid selectivity and the contrast were increased within the single-phase rectifier rather than the constant voltage rectifier.

  4. Effects of contrast improvement on high voltage rectification type of x-ray diagnostic apparatus

    International Nuclear Information System (INIS)

    Lee, Hoo Min; Yoon, Joon; Kim, Hyun Ju

    2014-01-01

    The purpose of this study was to analyze the effect on the selectivity on of high-voltage rectification device that measured the performance of the grid, and the contrast improvement ability (K factor) by measuring the scattered radiation content of the transmitted X-rays. The scattered radiation generated when the X-ray flux comes from the diagnostic X-ray generator that passes through an object. Targeting four different rectifications of X-ray generators, the mean value of the tube voltage and the tube current was measured in order to maximize the accuracy of the generating power dose within the same exposure condition. Using fluorescence meter, the content of the scattered rays that are transmitted through the acrylic was measured depending on the grid usage. When grid is not used, the content of the scattered rays was the lowest (34.158%) with the single-phase rectifier, was increased with the inverter rectifier (37.043%) and the three-phase 24-peak rectification method (37.447%). The difference of the scattered radiation content of each device was significant from the lowest 0.404% to the highest 3.289% while using 8:1 grid, the content of the scattered ray was the lowest with the single content of the scattered ray was the lowest with the single-phase rectifier (18.258%), was increased with the rectifier (25.502%) and the 24-peaks rectification (24.217%). Furthermore, there was difference up to content 7.244% to the lowest content 1.285% within three-phase 24-peaks rectification, inverter rectifications, and single-phase rectifier depending on the selectivity of the grid. Drawn from the statistical analysis, there was a similar relationship between the contrast improvement factor and the K factor. As a result, the grid selectivity and the contrast were increased within the single-phase rectifier rather than the constant voltage rectifier

  5. A Unified Impedance Model of Voltage-Source Converters with Phase-Locked Loop Effect

    DEFF Research Database (Denmark)

    Wang, Xiongfei; Harnefors, Lennart; Blaabjerg, Frede

    2016-01-01

    This paper proposes a unified impedance model for analyzing the effect of Phase-Locked Loop (PLL) on the stability of grid-connected voltage-source converters. In the approach, the dq-frame impedance model is transformed into the stationary αβ-frame by means of complex transfer functions...... and complex space vectors, which not only predicts the stability impact of the PLL, but reveals also its frequency coupling effect in the phase domain. Thus, the impedance models previously developed in the different domains can be unified. Moreover, the impedance shaping effects of PLL are structurally...... characterized for the current control in the rotating dq-frame and the stationary αβ-frame. Case studies based on the unified impedance model are presented, which are then verified in the time-domain simulations and experiments. The results closely correlate with the impedance-based analysis....

  6. Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise

    International Nuclear Information System (INIS)

    Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

    2009-01-01

    A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10 -18 F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear ΔC gate-source/drain -V gate response of FETs is utilized to determine the inversion layer capacitance (C inv ) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C inv = 60 aF.

  7. Effects of inositol trisphosphate on calcium mobilization in high-voltage and saponin-permeabilized platelets

    International Nuclear Information System (INIS)

    Gear, A.R.L.; Hallam, T.J.

    1986-01-01

    Interest in phosphatidylinositol metabolism has been greatly stimulated by the findings that diglyceride and inositol phosphates may serve as second messengers in modulating cellular function. Formation of 1,4,5-inositol trisphosphate (IP 3 ), in particular, has been linked to mobilization of intracellular calcium in a number of cell types. The authors have examined the ability of IP 3 to mobilize calcium in human platelets permeabilized by either saponin or high-voltage discharge. Saponin at 15 μg/ml effectively permeabilized platelets to exogenous inositol 1,4,5-trisphosphate which released bound [ 45 Ca] within 1 min and with a Ka of 7.4 +/- 4.1 μM. A small (25%) azide-sensitive pool was also responsive to inositol trisphosphate. The calcium pools were completely discharged by A-23187 and the ATP-dependent uptake was prevented by dinitrophenol. In contrast to the result with saponin, platelets accessed by high-voltage discharge were insensitive to challenge by inositol 1,4,5-trisphosphate. The data suggest that while inositol 1,4,5-trisphosphate can rapidly mobilize platelet calcium, the ability to demonstrate this depends on the method of permeabilization

  8. Effect of single walled carbon nanotubes on the threshold voltage of dye based photovoltaic devices

    International Nuclear Information System (INIS)

    Chakraborty, S.; Manik, N.B.

    2016-01-01

    Carbon nanotubes are being widely used in organic photovoltaic (OPV) devices as their usage has been reported to enhance the device efficiency along with other related parameters. In this work we have studied the energy (E_c) effect of single walled carbon nanotubes (SWCNT) on the threshold voltage (V_t_h) and also on the trap states of dye based photovoltaic devices. SWCNT is added in a series of dyes such as Rose Bengal (RB), Methyl Red (MR), Malachite Green (MG) and Crystal Violet (CV). By analysing the steady state dark current–voltage (I–V) characteristics V_t_h and E_c is estimated for the different devices with and without addition of SWCNT. It is observed that on an average for all the dyes V_t_h is reduced by about 30% in presence of SWCNT. The trap energy E_c also reduces in case of all the dyes. The relation between V_t_h, E_c and total trap density is discussed. From the photovoltaic measurements it is seen that the different photovoltaic parameters change with addition of SWCNT to the dye based devices. Both the short circuit current density and fill factor are found to increase for all the dye based devices in presence of SWCNT.

  9. Effects of doping and bias voltage on the screening in AAA-stacked trilayer graphene

    Science.gov (United States)

    Mohammadi, Yawar; Moradian, Rostam; Shirzadi Tabar, Farzad

    2014-09-01

    We calculate the static polarization of AAA-stacked trilayer graphene (TLG) and study its screening properties within the random phase approximation (RPA) in all undoped, doped and biased regimes. We find that the static polarization of undoped AAA-stacked TLG is a combination of the doped and undoped single-layer graphene static polarization. This leads to an enhancement of the dielectric background constant along a Thomas-Fermi screening with the Thomas-Fermi wave vector which is independent of carrier concentrations and a 1/r3 power law decay for the long-distance behavior of the screened Coulomb potential. We show that effects of a bias voltage can be taken into account by a renormalization of the interlayer hopping energy to a new bias-voltage-dependent value, indicating screening properties of AAA-stacked TLG can be tuned electrically. We also find that screening properties of doped AAA-stacked TLG, when μ exceeds √{2}γ, are similar to that of doped SLG only depending on doping. While for μ<√{2}γ, its screening properties are combination of SLG and AA-stacked bilayer graphene screening properties and they are determined by doping and the interlayer hopping energy.

  10. Effect of applied voltage and initial concentration to desalting NaCl solution using electrodialysis

    International Nuclear Information System (INIS)

    Boubakri, Ali; Gzara, Lassaad; Dhahbi, Mahmoud; Bouguecha, Salah

    2009-01-01

    The desalination process of electrodialysis is one of membrane separation that competes with reverse osmosis for desalination of brackish water and seawater. In this work water desalination using a laboratory electrodialysis was performed and evaluated to desalting aqueous solutions containing 5000, 10000 and 20000 mg/L NaCl at different applied potential (10, 15 and 20 V) and at a constant flow rate of 3 L/min. Nine electrodialysis runs were performed. The results showed that the increasing of applied potential and decreasing of NaCl concentration have an important effect to enhance the electrodialysis performance. The efficiencies of each experiment were evaluated as function of specific power consumption with the electrical energy consumed in electrodialysis stack. It was obtained that the specific power consumption increased when the salt concentration and applied voltage increased. A laboratory electrodialysis stack containing fifteen cation exchange membranes and fifteen anion exchange membranes of 0,716 m 2 total effective area was used.

  11. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2011-01-01

    the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.

  12. Effect of alternating voltage treatment on corrosion resistance of AZ91D magnesium alloy

    Energy Technology Data Exchange (ETDEWEB)

    Liu, X. [Corrosion and Protection Laboratory, Key Laboratory of Superlight Materials and Surface Technology (Harbin Engineering University), Ministry of Education, Harbin (China); Zhang, T.; Shao, Y.; Meng, G.; Wang, F. [Corrosion and Protection Laboratory, Key Laboratory of Superlight Materials and Surface Technology (Harbin Engineering University), Ministry of Education, Harbin (China); State Key Laboratory for Corrosion and Protection, Institute of Metal Research, Chinese Academy of Sciences, Shenyang (China)

    2012-06-15

    AZ91D magnesium alloy was treated by the alternating voltage (AV) treatment technique. The optimal AV-treatment parameters of the alloy were determined by orthogonal experiments. Polarization curve, electrochemical impedance spectroscopy (EIS), and scanning electrochemical microscopy (SECM) were used to understand the effect of AV-treatment on the corrosion resistance of the alloy. AFM, contact angle, and XPS were employed to investigate further the influence of AV-treatment on the properties of the surface film formed on the alloy after AV-treatment. The results showed that a uniform and stable film was formed and the corrosion resistance of AZ91D magnesium alloy was significantly improved after AV-treatment. This was caused by the noticeable change of the chemical structure and semi-conducting properties of the surface film after AV-treatment. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. APPLIED OPTICS. Voltage-tunable circular photogalvanic effect in silicon nanowires.

    Science.gov (United States)

    Dhara, Sajal; Mele, Eugene J; Agarwal, Ritesh

    2015-08-14

    Electronic bands in crystals can support nontrivial topological textures arising from spin-orbit interactions, but purely orbital mechanisms can realize closely related dynamics without breaking spin degeneracies, opening up applications in materials containing only light elements. One such application is the circular photogalvanic effect (CPGE), which is the generation of photocurrents whose magnitude and polarity depend on the chirality of optical excitation. We show that the CPGE can arise from interband transitions at the metal contacts to silicon nanowires, where inversion symmetry is locally broken by an electric field. Bias voltage that modulates this field further controls the sign and magnitude of the CPGE. The generation of chirality-dependent photocurrents in silicon with a purely orbital-based mechanism will enable new functionalities in silicon that can be integrated with conventional electronics. Copyright © 2015, American Association for the Advancement of Science.

  14. Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, Himadri; Kataria, Satender [RWTH Aachen University, Chair for Electronic Devices, Aachen (Germany); University of Siegen, School of Science and Technology, Siegen (Germany); Aguirre-Morales, Jorge-Daniel; Fregonese, Sebastien; Zimmer, Thomas [IMS Laboratory, Centre National de la Recherche Scientifique, University of Bordeaux, Talence (France); Passi, Vikram [University of Siegen, School of Science and Technology, Siegen (Germany); AMO GmbH, Advanced Microelectronics Center Aachen (Germany); Iannazzo, Mario; Alarcon, Eduard [Technical University of Catalonia, Department of Electronics Engineering, UPC, Barcelona (Spain); Lemme, Max C. [RWTH Aachen University, Chair for Electronic Devices, Aachen (Germany); University of Siegen, School of Science and Technology, Siegen (Germany); AMO GmbH, Advanced Microelectronics Center Aachen (Germany)

    2017-11-15

    We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may be attributed to increased charge carrier density in the channel and thus reduced saturation velocity due to carrier-carrier scattering. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Effect of quantum noise and tunneling on the fluctuational voltage-current characteristics and the lifetime of the zero-voltage state in Josephson junctions

    International Nuclear Information System (INIS)

    Mel'nikov, V.I.; Suetoe, A.

    1986-01-01

    The minima of the potential energy for the dynamical variable phi of a Josephson junction are separated by barriers of height hI/sub c//e, where I/sub c/ is the critical current. At low temperatures, T hΩ/2π (Ω is the Josephson plasma frequency). We consider this problem for high-quality junctions (RCΩ>>1, R and C are the resistance and the capacitance of the junction), accounting for the effect of a Johnson-Nyquist noise and quantum tunneling at the barrier top. With a simplifying assumption, we derive a pair of integral equations containing an energy variable for the steady-state distribution of phi and phi-dot, and solve it by a modification of the Wiener-Hopf method. The result is a formula for the current dependence of the fluctuational voltage, valid for currents I 2 <<1

  16. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tarasova, E. A.; Obolenskaya, E. S., E-mail: obolensk@rf.unn.ru; Hananova, A. V.; Obolensky, S. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Zemliakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Nezhenzev, A. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Saharov, A. V.; Zazul’nokov, A. F.; Lundin, V. V.; Zavarin, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Medvedev, G. V. [JSC RPE Salut (Russian Federation)

    2016-12-15

    The sensitivity of classical n{sup +}/n{sup –} GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current–voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defects that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.

  17. Effect of voltage waveform on dielectric barrier discharge ozone production efficiency

    Science.gov (United States)

    Mericam-Bourdet, N.; Kirkpatrick, M. J.; Tuvache, F.; Frochot, D.; Odic, E.

    2012-03-01

    Dielectric barrier discharges (DBDs) are commonly used for gas effluent cleanup and ozone generation. For these applications, the energy efficiency of the discharge is a major concern. This paper reports on investigations carried out on the voltage shape applied to DBD reactor electrodes, aiming to evaluate a possible energy efficiency improvement for ozone production. Two DBD reactor geometries were used: pin-to-pin and cylinder-to-cylinder, both driven either by a bi-directional power supply (voltage rise rate 1 kV/μs) or by a pulsed power supply (voltage rise rate 1 kV/ns). Ozone formed in dry air was measured at the reactor outlet. Special attention was paid to discharge input power evaluation using different methods including instantaneous current-voltage product and transferred charge-applied voltage figures. The charge transferred by the discharges was also correlated to the ozone production. It is shown that, in the case of the DBD reactors under investigation, the applied voltage shape has no influence on the ozone production efficiency. For the considered voltage rise rate, the charge deposit on the dielectric inserted inside the discharge gap is the important factor (as opposed to the voltage shape) governing the efficiency of the discharge - it does this by tailoring the duration of the current peak into the tens of nanosecond range.

  18. Synthesis of sheath voltage drops in asymmetric radio-frequency discharges

    International Nuclear Information System (INIS)

    Yonemura, Shigeru; Nanbu, Kenichi; Iwata, Naoaki

    2004-01-01

    A sheath voltage drop in asymmetric discharges is one of the most important parameters of radio-frequency capacitively coupled plasmas because it determines the kinetic energy of the ions incident on the target or substrate. In this study, we developed a numerical simulation code to estimate the sheath voltage drops and, consequently, the self-bias voltage. We roughly approximated general asymmetric rf discharges to one-dimensional spherical ones. The results obtained by using our simulation code are consistent with measurements and Lieberman's theory

  19. Effects of tetracaine on voltage-activated calcium sparks in frog intact skeletal muscle fibers.

    Science.gov (United States)

    Hollingworth, Stephen; Chandler, W Knox; Baylor, Stephen M

    2006-03-01

    The properties of Ca(2+) sparks in frog intact skeletal muscle fibers depolarized with 13 mM [K(+)] Ringer's are well described by a computational model with a Ca(2+) source flux of amplitude 2.5 pA (units of current) and duration 4.6 ms (18 degrees C; Model 2 of Baylor et al., 2002). This result, in combination with the values of single-channel Ca(2+) current reported for ryanodine receptors (RyRs) in bilayers under physiological ion conditions, 0.5 pA (Kettlun et al., 2003) to 2 pA (Tinker et al., 1993), suggests that 1-5 RyR Ca(2+) release channels open during a voltage-activated Ca(2+) spark in an intact fiber. To distinguish between one and greater than one channel per spark, sparks were measured in 8 mM [K(+)] Ringer's in the absence and presence of tetracaine, an inhibitor of RyR channel openings in bilayers. The most prominent effect of 75-100 microM tetracaine was an approximately sixfold reduction in spark frequency. The remaining sparks showed significant reductions in the mean values of peak amplitude, decay time constant, full duration at half maximum (FDHM), full width at half maximum (FWHM), and mass, but not in the mean value of rise time. Spark properties in tetracaine were simulated with an updated spark model that differed in minor ways from our previous model. The simulations show that (a) the properties of sparks in tetracaine are those expected if tetracaine reduces the number of active RyR Ca(2+) channels per spark, and (b) the single-channel Ca(2+) current of an RyR channel is normal voltage-activated sparks (i.e., in the absence of tetracaine) are produced by two or more active RyR Ca(2+) channels. The question of how the activation of multiple RyRs is coordinated is discussed.

  20. Effect of anodizing voltage on the sorption of water molecules on porous alumina

    Energy Technology Data Exchange (ETDEWEB)

    Vrublevsky, I., E-mail: vrublevsky@bsuir.edu.by [Belarusian State University of Informatics and Radioelectronics, Department of Micro and Nanoelectronics, 220013 Minsk (Belarus); Chernyakova, K. [Belarusian State University of Informatics and Radioelectronics, Department of Micro and Nanoelectronics, 220013 Minsk (Belarus); Bund, A.; Ispas, A.; Schmidt, U. [Fachgebiet Elektrochemie und Galvanotechnik, Technische Universitaet Ilmenau, 98693 Ilmenau (Germany)

    2012-05-01

    The amount of water adsorbed on different centers on the surface of oxalic acid alumina films is a function of the anodizing voltage. It is decreased with increasing the anodizing voltage from 20 up to 50 V, came up to maximum value at 20-30 V and slightly increased at voltages above 50 V. Water adsorption by oxide films formed at voltages below 50 V can be due to the negative surface charge that is present on the alumina surface. The negative surface charge disappears in the films formed at voltages higher than 50 V, and thus, the water is adsorbed on aluminum ions in a tetrahedral and octahedral environment. The correlation between anodizing conditions of aluminum in oxalic acid and the structure and composition of anodic alumina was established by Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM), thermogravimetric and differential thermal analyses (TG/DTA).

  1. The Effect of Voltage Charging on the Transport Properties of Gold Nanotube Membranes.

    Science.gov (United States)

    Experton, Juliette; Martin, Charles R

    2018-05-01

    Porous membranes are used in chemical separations and in many electrochemical processes and devices. Research on the transport properties of a unique class of porous membranes that contain monodisperse gold nanotubes traversing the entire membrane thickness is reviewed here. These gold nanotubes can act as conduits for ionic and molecular transports through the membrane. Because the tubes are electronically conductive, they can be electrochemically charged by applying a voltage to the membrane. How this "voltage charging" affects the transport properties of gold nanotube membranes is the subject of this Review. Experiments showing that voltage charging can be used to reversibly switch the membrane between ideally cation- and anion-transporting states are reviewed. Voltage charging can also be used to enhance the ionic conductivity of gold nanotube membranes. Finally, voltage charging to accomplish electroporation of living bacteria as they pass through gold nanotube membranes is reviewed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Effects of detector-source distance and detector bias voltage variations on time resolution of general purpose plastic scintillation detectors.

    Science.gov (United States)

    Ermis, E E; Celiktas, C

    2012-12-01

    Effects of source-detector distance and the detector bias voltage variations on time resolution of a general purpose plastic scintillation detector such as BC400 were investigated. (133)Ba and (207)Bi calibration sources with and without collimator were used in the present work. Optimum source-detector distance and bias voltage values were determined for the best time resolution by using leading edge timing method. Effect of the collimator usage on time resolution was also investigated. Copyright © 2012 Elsevier Ltd. All rights reserved.

  3. A self-biased 3D tunable helical antenna in ferrite LTCC substrate

    KAUST Repository

    Ghaffar, Farhan A.; Shamim, Atif

    2015-01-01

    A ferrite LTCC based helical antenna which also provides magneto-static bias for its frequency tuning is presented in this work. The 3D helical-cum-bias winding design avoids the use of large external electromagnets which are traditionally used with ferrite based tunable antennas. This reduces the overall size of the design while making it efficient by getting rid of demagnetization effect experienced at the air-to-ferrite interface. RF choke and DC blocking capacitor, required to isolate the RF and DC passing through a single structure, are integrated within the multi-layer Ferrite LTCC substrate. Magnetostatic and microwave simulations have been carried out for the design optimization. The prototype antenna demonstrates a tuning range of 10 % around 13 GHz. An optimized design with an air cavity is also presented which reduces the biasing power requirement by 40 %.

  4. A self-biased 3D tunable helical antenna in ferrite LTCC substrate

    KAUST Repository

    Ghaffar, Farhan A.

    2015-07-19

    A ferrite LTCC based helical antenna which also provides magneto-static bias for its frequency tuning is presented in this work. The 3D helical-cum-bias winding design avoids the use of large external electromagnets which are traditionally used with ferrite based tunable antennas. This reduces the overall size of the design while making it efficient by getting rid of demagnetization effect experienced at the air-to-ferrite interface. RF choke and DC blocking capacitor, required to isolate the RF and DC passing through a single structure, are integrated within the multi-layer Ferrite LTCC substrate. Magnetostatic and microwave simulations have been carried out for the design optimization. The prototype antenna demonstrates a tuning range of 10 % around 13 GHz. An optimized design with an air cavity is also presented which reduces the biasing power requirement by 40 %.

  5. Effects of low level laser therapy and high voltage stimulation on diabetic wound healing

    Directory of Open Access Journals (Sweden)

    María Cristina Sandoval Ortíz

    2014-08-01

    Full Text Available Background: a review of the literature found no clinical studies in which low level laser therapy (LLLT and high voltage pulsed current (HVPC were compared to evaluate their effectiveness in promoting wound healing. Objective: The purpose of this study was compare the effects of LLLT, HVPC and standard wound care (SWC on the healing of diabetic foot ulcers. Methods: randomized controlled clinical trial where diabetic patients were divided in control group (CG treated with SWC; HVPC group received HVPC plus SWC; LLLTgroup, treated with LLLT plus SWC. HVPC was applied 45min, 100pps and 100μs. LLLTparameters were 685nm, 30mW,2J/cm² applied to the wound edges and 1,5J/cm² in the wound bed. All subjects were treated 16 weeks or until the wound closed. The variables were healing, healing proportion, ulcers's characteristics, protective sensation, nerve conduction studies (NCS and quality life. ANCOVA analysis and a Fisher's exact test were applied. Results: Twenty-eight subjects completed the protocol.The healing was reached by 7/9, 8/10 and 6/9 participants of the LLLT, HVPC and CG respectively in the 16th week. There were no statistically significant differences between the groups in the healing proportion, NCS, sensory testing or quality of life (p>0,05. Conclusions: The results of this study did not demonstrated additional effects of LLL or HVPC to the standard wound care (SWC on healing of diabetic ulcers.

  6. Atomic mean-square displacements and the critical-voltage effect in cubic solid solutions

    International Nuclear Information System (INIS)

    Shirley, C.G.; Fisher, R.M.

    1979-01-01

    The critical-voltage phenomena observed in high-voltage electron microscope images of bend contours as well as in corresponding Kikuchi or convergent-beam diffraction patterns provide sensitive methods of determining submicroscopic alloy parameters such as Debye temperatures, short-range order, and atomic scattering factors. Only a very limited number of critical voltages can be observed in metal crystals in the voltage range usually available, 100 to 1200 kV, so that quantitative interpretation of the data must be based on a few-parameter model which incorporates all the pertinent factors. A satisfactory two-parameter model has been developed which can be used to interpret or compute the critical voltages of substitutional solid solutions as functions of composition, temperature and short-range order. In the alloy systems Fe-Cr, Ni-Au, Cu-Au and Cu-Al, sufficient critical voltage data are available to derive the model parameters which pertain to atomic bonding in the lattice. In addition to atomic scattering amplitudes, the critical voltage depends strongly on the atomic mean-square displacements. The static contribution to the mean-square displacements is large in alloys with large atomic-radius disparity, and is especially sensitive to short-range order in f.c.c. solid solutions. Well-defined best estimates for the model parameters are used to predict the critical voltage and its sensitivity to composition, temperature and short-range order for a large number of solid solutions. Systems for which critical-voltage studies may be of considerable interest are indicated. (author)

  7. Effects of bias voltage on the properties of ITO films prepared on polymer substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lim, Donggun; Yang, Keajoon; Song, Woochang; Yi, Junsin

    2005-01-01

    The ITO (indium tin oxide) thin films were deposited on acryl, glass, PET, and poly-carbonate substrates by DC reactive magnetron sputtering. The bias voltage was changed from -20 to -80 V. As the bias voltage increased, the deposition rate of ITO films decreased regardless of substrate types. The roughness of the films on PET increased with the bias voltage. The study demonstrated that the bias improved the electrical and optical properties of ITO films regardless of substrate types. The lowest electrical resistivity of 5.5x10 -4 no. OMEGAno. -cm and visible transmittance of about 80% were achieved by applying a negative bias of -60 V

  8. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    International Nuclear Information System (INIS)

    Luo Jun; Zhao Sheng-Lei; Mi Min-Han; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei; Hou Bin

    2016-01-01

    The effects of gate length L G on breakdown voltage V BR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with L G = 1 μm∼ 20 μm. With the increase of L G , V BR is first increased, and then saturated at L G = 3 μm. For the HEMT with L G = 1 μm, breakdown voltage V BR is 117 V, and it can be enhanced to 148 V for the HEMT with L G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with L G > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with L G = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. (paper)

  9. Effectiveness evaluation of the tube voltage measurement by using additional filter

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Jun Ho; Lee, Kyung Ho; Choi, Yoon Bong [Dept. of Radiology, Kyung Hee University Medical Center, Seoul (Korea, Republic of); Kang, Byung Sam [Dept. of Radiological Technology, Shingu College, Sungnam (Korea, Republic of)

    2015-12-15

    Advancement in the medical field provides an opportunity for the development of medical equipment and also enable accurate diagnosis for the inspection and the treatment of diseases. The aging of equipment due to the frequent operation produce uncertainty in the patient exposure dose, so a quality control was implemented by establishing a safety management system on a regular basis. The x-ray tube voltage (kVp), which is directly involved in the patient exposure dose and the life of the equipment, needs periodic performance for the quality control, but it has a limitation due to the time and the cost. In this study, we proposed a new method for measuring the kVp with ease by using the Y and Cu to solve the problem of the time and cost. We also evaluated the usefulness and the effectiveness of the new method and its accuracy through the kVp measurement. After securing the condition, the amount of the tube current and evaluating the usefulness and effectiveness of kVp measured using Y and Cu. The density range used was at 0.5-1.0, kVp was in the range of ±10%, then, we recorded the change in concentration as % of Y and Cu. This experiment showed that when Cu and Y was at 75 kVp, concentration was the same, and when the kVp was changed to 65 ⁓ 85 % , a gradual increase in concentration to 85 ⁓ 110 % was noted.

  10. Effectiveness evaluation of the tube voltage measurement by using additional filter

    International Nuclear Information System (INIS)

    Hwang, Jun Ho; Lee, Kyung Ho; Choi, Yoon Bong; Kang, Byung Sam

    2015-01-01

    Advancement in the medical field provides an opportunity for the development of medical equipment and also enable accurate diagnosis for the inspection and the treatment of diseases. The aging of equipment due to the frequent operation produce uncertainty in the patient exposure dose, so a quality control was implemented by establishing a safety management system on a regular basis. The x-ray tube voltage (kVp), which is directly involved in the patient exposure dose and the life of the equipment, needs periodic performance for the quality control, but it has a limitation due to the time and the cost. In this study, we proposed a new method for measuring the kVp with ease by using the Y and Cu to solve the problem of the time and cost. We also evaluated the usefulness and the effectiveness of the new method and its accuracy through the kVp measurement. After securing the condition, the amount of the tube current and evaluating the usefulness and effectiveness of kVp measured using Y and Cu. The density range used was at 0.5-1.0, kVp was in the range of ±10%, then, we recorded the change in concentration as % of Y and Cu. This experiment showed that when Cu and Y was at 75 kVp, concentration was the same, and when the kVp was changed to 65 ⁓ 85 % , a gradual increase in concentration to 85 ⁓ 110 % was noted

  11. Synergistic effects of liquid and gas phase discharges using pulsed high voltage for dyes degradation in the presence of oxygen.

    Science.gov (United States)

    Yang, Bin; Zhou, Minghua; Lei, Lecheng

    2005-07-01

    The technology of combined liquid and gas phase discharges (LGD) using pulsed high voltage for dyes degradation was developed in this study. Apparent synergistic effects for Acid orange II (AO) degradation in the presence of oxygen were observed. The enhancement of AO degradation rate was around 302%. Furthermore, higher energy efficiency was obtained comparing with individual liquid phase discharge (LD) or gas phase discharge process (GD). The AO degradation in the presence of oxygen by LGD proceeded through the direct ozone oxidation and the ozone decomposition induced by LD. Important operating parameters such as electrode distance, applied voltage, pulse repetition rate, and types of dyes were further investigated.

  12. Effect of voltage shape of electrical power supply on radiation and density of a cold atmospheric argon plasma jet

    Directory of Open Access Journals (Sweden)

    F Sohbatzadeh

    2017-02-01

    Full Text Available In this work, we investigated generating argon cold plasma jet at atmospheric pressure based on dielectric barrier discharge configuration using three electrical power supplies of sinusoidal, pulsed and saw tooth high voltage shapes at 8 KHZ. At first; we describe the electronic circuit features for generating high voltage (HV wave forms including saw tooth, sinusoidal and pulsed forms. Then, we consider the effect of voltage shape on the electrical breakdown. Relative concentrations of chemical reactive species such as Oxygen, atomic Nitrogen and OH were measured using optical emission spectroscopy. Using a simple numerical model, we showed a HV with less rise time increases electron density, therefore a cold plasma jet can be produced with a minimal consumption electrical power

  13. Effect of resin composition to the electrical and mechanical properties of high voltage insulator material

    International Nuclear Information System (INIS)

    Totok Dermawan; Elin Nuraini; Suyamto

    2012-01-01

    A solid insulator manufacture of resins for high voltage with a variation of resin and hardener composition has been made. The purpose of research to know electrical and mechanical properties of high voltage insulator material of resin. To determine its electric properties, the material is tested its breakdown voltage and the flashover voltage that occurred on the surface. While to determine the mechanical properties were tested by measuring its strength with a tensile test. From testing with variety of mixed composition it is known that for composition between hardener and resin of 1 : 800 has most advantageous properties because it has good strength with a tensile strength of 19.86 MPa and enough high dielectric strength of 43.2 kV / mm). (author)

  14. Effects of balanced and unbalanced voltage sags on DC adjustable-speed drives

    Energy Technology Data Exchange (ETDEWEB)

    Pedra, Joaquin; Sainz, Luis; Corcoles, Felipe; Bergas, Joan [Department of Electrical Engineering, ETSEIB-UPC, Av. Diagonal, 647, 08028 Barcelona (Spain); de Blas, Alfredo [Department of Electrical Engineering, EUETIB-UPC, C. d' Urgell, 187, 08036 Barcelona (Spain)

    2008-06-15

    This paper analyzes the sensitivity of DC adjustable-speed drives to balanced and unbalanced voltage sags. The influence of sag type, depth, duration and phase-angle jump on DC drives is studied. The control of the DC drive has been taken into account to understand drive behavior in the presence of voltage sags. Two working modes of the DC motor are considered in the study: as a consumer load and as a regenerative load. When the DC motor works as a consumer load, the study shows that sag type and depth have a significant influence on drive behavior. However, the voltage sag can be ridden through if the rectifier firing angle is set correctly by the control. When the DC motor works as a regenerative load, the study shows the consequences of the three-phase rectifier commutation failure due to the voltage sag. (author)

  15. Effect of strain on voltage-controlled magnetism in BiFeO₃-based heterostructures.

    Science.gov (United States)

    Wang, J J; Hu, J M; Yang, T N; Feng, M; Zhang, J X; Chen, L Q; Nan, C W

    2014-04-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures.

  16. Effect of strain on voltage-controlled magnetism in BiFeO3-based heterostructures

    Science.gov (United States)

    Wang, J. J.; Hu, J. M.; Yang, T. N.; Feng, M.; Zhang, J. X.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures. PMID:24686503

  17. Disinfection of fresh chicken breast fillets with in-package atmospheric cold plasma: effect of treatment voltage and time

    Science.gov (United States)

    Effects of treatment voltage and time of in-package atmospheric cold plasma (ACP) were studied on ozone formation, microbiological quality, surface color, and pH of fresh chicken fillets. Samples were sealed in food trays in air, treated with a dielectric-barrier-discharge (DBD) ACP system, and stor...

  18. Contact angle influence on the pull-in voltage of microswitches in the presence of capillary and quantum vacuum effects

    NARCIS (Netherlands)

    Palasantzas, George

    2007-01-01

    Capillary condensation between the electrodes of microswitches influences the effective pull-in voltage in a manner that depends on the contact angle of the capillary meniscus and the presence of plate surface roughness. Indeed, surface roughening is shown to have a stronger influence on the pull-in

  19. Perpendicular magnetic anisotropy influence on voltage-driven spin-diode effect in magnetic tunnel junctions: A micromagnetic study

    Energy Technology Data Exchange (ETDEWEB)

    Frankowski, Marek, E-mail: mfrankow@agh.edu.pl [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); Chȩciński, Jakub [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); AGH University of Science and Technology, al. Mickiewicza 30, Faculty of Physics and Applied Computer Science, 30-059 Kraków (Poland); Skowroński, Witold; Stobiecki, Tomasz [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland)

    2017-05-01

    We study the influence of the perpendicular magnetic anisotropy on the voltage-induced ferromagnetic resonance in magnetic tunnel junctions (MTJs). An MTJ response to the applied radio-frequency voltage excitation is investigated using micromagnetic calculations with the free layer oriented both in-plane and out-of-plane. Our model allows for a quantitative description of the magnetic system parameters such as resonance frequency, sensitivity or quality factor and for a distinction between material-dependent internal damping and disorder-dependent effective damping. We find that the sensitivity abruptly increases up to three orders of magnitude near the anisotropy transition regime, while the quality factor declines due to effective damping increase. We attribute the origin of this behaviour to the changes of the exchange energy in the system, which is calculated using micromagnetic approach. - Highlights: • Micromagnetic approach is used for modelling of voltage-induced spin-diode effect. • Voltage-induced switching simulations are performed. • Spin-diode line is analyzed as a function of perpendicular anisotropy energy. • Effective damping, quality factor and sensitivity are calculated.

  20. Low operating voltage n-channel organic field effect transistors using lithium fluoride/PMMA bilayer gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Dhar, A., E-mail: adhar@phy.iitkgp.ernet.in

    2015-10-15

    Highlights: • Alternative to chemically crosslinking of PMMA to achieve low leakage in provided. • Effect of LiF in reducing gate leakage through the OFET device is studied. • Effect of gate leakage on transistor performance has been investigated. • Low voltage operable and low temperature processed n-channel OFETs were fabricated. - Abstract: We report low temperature processed, low voltage operable n-channel organic field effect transistors (OFETs) using N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C{sub 8}) organic semiconductor and poly(methylmethacrylate) (PMMA)/lithium fluoride (LiF) bilayer gate dielectric. We have studied the role of LiF buffer dielectric in effectively reducing the gate leakage through the device and thus obtaining superior performance in contrast to the single layer PMMA dielectric devices. The bilayer OFET devices had a low threshold voltage (V{sub t}) of the order of 5.3 V. The typical values of saturation electron mobility (μ{sub s}), on/off ratio and inverse sub-threshold slope (S) for the range of devices made were estimated to be 2.8 × 10{sup −3} cm{sup 2}/V s, 385, and 3.8 V/decade respectively. Our work thus provides a potential substitution for much complicated process of chemically crosslinking PMMA to achieve low leakage, high capacitance, and thus low operating voltage OFETs.

  1. Effects of gamma irradiation on voltage-dependant NA+ and K+ currents in N1E-115 cells

    International Nuclear Information System (INIS)

    Diserbo, M.; Barbier, M.; Quignard, J.F.

    1998-01-01

    Effects of 15 Gy gamma irradiation on voltage-dependent Na + and K + currents in differentiated N1E-115 cells are studied by using whole cell recording. Only, we observed an activation of Na + currents at a lower threshold. (authors)

  2. Effect of Transportation and Low Voltage Electrical Stimulation on Meat Quality Characteristics of Omani Sheep

    Directory of Open Access Journals (Sweden)

    Isam T. Kadim

    2010-01-01

    Full Text Available The aim of this study was to determine the effects of road transportation during the hot season (36 oC and low voltage electrical stimulation on meat quality characteristics of Omani sheep. Twenty intact male sheep (1-year old were divided into two equal groups: 3 hrs transported or non-transported. The transported group was transferred to the slaughterhouse the day of slaughter in an open truck covering a distance of approximately 300 km. The non-transported group was kept in a lairage of a commercial slaughterhouse with ad libitum feed and water for 3 days prior to slaughter. Blood samples were collected from the animals before loading and prior to slaughter in order to assess their physiological response to stress in terms of hormonal levels. Fifty percent of the carcasses from each group were randomly assigned to low voltage (90 V at 20 min postmortem. Muscle ultimate pH, expressed juice, cooking loss percentage, WB-shear force value, sarcomere length, myofibrillar fragmentation index and colour L*, a*, b* were measured on samples from Longissimus dorsi muscles collected 24 hrs postmortem at 2-4 oC. The transported sheep had significantly (P<0.05 higher cortisol adrenaline, nor-adrenaline, and dopamine levels than the non-transported group. Muscles from electrically-stimulated carcasses had significantly (P<0.05 lower pH values, longer sarcomere length, lower shear force value, higher expressed juice, myofibrillar fragmentation index and L* values than those from non-stimulated ones. Transportation significantly influenced meat quality characteristics of the Longissimus dorsi muscle. Muscle ultimate pH and shear force values were significantly higher, while CIE L*, a*, b*, expressed juice and cooking loss were lower in transported than non-transported sheep. This study indicated that pre-slaughter transportation at high ambient temperatures can cause noticeable changes in muscle physiology in sheep. Nevertheless, meat quality of transported

  3. Effect of high voltage atmospheric cold plasma on white grape juice quality.

    Science.gov (United States)

    Pankaj, Shashi Kishor; Wan, Zifan; Colonna, William; Keener, Kevin M

    2017-09-01

    This study focuses on the effects of novel, non-thermal high voltage atmospheric cold plasma (HVACP) processing on the quality of grape juice. A quality-based comparison of cold plasma treatment with thermal pasteurization treatment of white grape juice was done. HVACP treatment of grape juice at 80 kV for 4 min resulted in a 7.4 log 10 CFU mL -1 reduction in Saccharomyces cerevisiae without any significant (P > 0.05) change in pH, acidity and electrical conductivity of the juice. An increase in non-enzymatic browning was observed, but total color difference was very low and within acceptable limits. Spectrophotometric measurements showed a decrease in total phenolics, total flavonoids, DPPH free radical scavenging and antioxidant capacity, but they were found to be comparable to those resulting from thermal pasteurization. An increase in total flavonols was observed after HVACP treatments. HVACP treatment of white grape juice at 80 kV for 2 min was found to be comparable to thermal pasteurization in all analyzed quality attributes. HVACP has shown the potential to be used as an alternative to thermal treatment of white grape juice. © 2017 Society of Chemical Industry. © 2017 Society of Chemical Industry.

  4. Effect of applied voltage and inter-pulse delay in spark-assisted LIBS

    Science.gov (United States)

    Robledo-Martinez, A.; Sobral, H.; Garcia-Villarreal, A.

    2018-06-01

    We report the results obtained in an investigation on the effect of the time delay between the laser and electrical pulses in a spark-assisted laser-induced breakdown spectroscopy (LIBS) experiment. The electrical discharge is produced by the discharge of a charged coaxial cable. This arrangement produces a fast unipolar current pulse (500 ns) that applies high power ( 600 kW) to the laser ablation plasma. The delay between the laser pulse and the electric pulse can be controlled at will in order to find the optimal time in terms of enhancement of the emitted lines. It was found that the application of the high voltage pulse enhances the ionic lines emitted by up to two orders of magnitude. An additional enhancement by a factor of 2-4 can be obtained delaying the application of the electric pulse by a time of 0.6-20 μs. In the tests it was noticed that the ionic lines were found to be clearly responsive to increments in the applied electric energy while the neutral lines did so marginally. Our results show that the intensification of the lines is mainly due to reheating of the ablation plasma as the application of the electrical pulse increments the temperature of the ablation plasma by about 50%. It is demonstrated that the present technique is an efficient way of intensifying the lines emitted without incurring in additional damage to the sample.

  5. Effect of High Solenoidal Magnetic Fields on Breakdown Voltages of High Vacuum 805 MHz Cavities

    CERN Document Server

    Moretti, A; Geer, S; Qian, Z

    2004-01-01

    The demonstration of muon ionization cooling by a large factor is necessary to demonstrate the feasilibility of a collider or neutrino factory. An important cooling experiment, MICE [1], has been proposed to demonstrate 10 % cooling which will validate the technology. Ionization cooling is accomplished by passing a high-emittance beam in a multi-Tesla solenoidal channel alternately through regions of low Z material and very high accelerating RF Cavities. To determine the effect of very large solenoidal magnetic fields on the generations of Dark current, X-Rays and breakdown Voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station, and a large bore 5 T solenoidal superconducting magnet containing a pill box type Cavity with thin removable window apertures allowing dark current studies and breakdown studies of different materials. The results of this study will be presented. The study has shown that the peak achievab...

  6. Effect of high solenoidal magnetic fields on breakdown voltages of high vacuum 805 MHz cavities

    International Nuclear Information System (INIS)

    Moretti, A.; Bross, A.; Geer, S.; Qian, Z.; Norem, J.; Li, D.; Zisman, M.; Torun, Y.; Rimmer, R.; Errede, D.

    2005-01-01

    There is an on going international collaboration studying the feasibility and cost of building a muon collider or neutrino factory [1,2]. An important aspect of this study is the full understanding of ionization cooling of muons by many orders of magnitude for the collider case. An important muon ionization cooling experiment, MICE [3], has been proposed to demonstrate and validate the technology that could be used for cooling. Ionization cooling is accomplished by passing a high-emittance muon beam alternately through regions of low Z material, such as liquid hydrogen, and very high accelerating RF Cavities within a multi-Tesla solenoidal field. To determine the effect of very large solenoidal magnetic fields on the generation of dark current, x-rays and on the breakdown voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station and a large warm bore 5 T solenoidal superconducting magnet containing a pill box type cavity with thin removable window apertures. This system allows dark current and breakdown studies of different window configurations and materials. The results of this study will be presented. The study has shown that the peak achievable accelerating gradient is reduced by a factor greater than 2 when solenoidal field of greater than 2 T are applied to the cavity

  7. Control and optimization of the slope asymmetry effect in tailored voltage waveforms for capacitively coupled plasmas

    International Nuclear Information System (INIS)

    Bruneau, B; Novikova, T; Johnson, E V; Lafleur, T; Booth, J P

    2015-01-01

    Through the use of particle-in-cell simulations, we study the ion flux asymmetry in an argon discharge that is induced by a ‘sawtooth-like’ excitation voltage waveform. In a previous article we have shown that, due to their differing rising and falling slopes, these waveforms can create a plasma with a significantly higher ion flux to one electrode in a geometrically symmetric reactor. Furthermore, they have the unique property of providing a lower ion energy at the electrode with a higher ion flux. In the present work, we show that a refined waveform allows the ion flux asymmetry to be increased for a given number of harmonics by reducing the ionization rate in front of the low-flux electrode. The flux asymmetry is found to disappear at low pressure due to the increased electron energy transport, which causes a transition from sheath edge ionization to bulk ionization. Changing the fundamental frequency is shown to have two counterbalancing effects: reducing the ionization on the low ion-flux electrode and shifting the maximum ionization to the center of the discharge. Under the representative conditions that we have studied, a maximum asymmetry is found for a base frequency of 3.4 MHz. Finally, it is shown that, by adjusting the rise- to fall-time ratio of the refined waveforms, the ion-flux asymmetry can be continuously shifted from one electrode to the other. (paper)

  8. A research technique for the effect of higher harmonic voltages on the operating parameters of a permanent magnet synchronous generator

    Directory of Open Access Journals (Sweden)

    Hasanova L. H.

    2017-12-01

    Full Text Available Nowadays permanent magnet synchronous machines those frequency-controlled from stator side with frequency inverters made on the basis of power transistors or fully controlled thyristors, are widely used as motors and generators. In future they are also promising a good application in transport, including marine. Modern frequency inverters are equipped with a control system based on sine-shaped pulse width modulation. While shaping the voltage in the output of the inverter, in addition to the fundamental harmonic, higher harmonic components are also included in the voltage shape, which certainly affect the operating parameters of the generator (electromagnetic torque, power, currents. To determine this effect the modeling and investigation technique of higher harmonic voltages in the "electric network – frequency converter – synchronous machine with permanent magnets" system has been developed. The proposed equations of a frequency-controlled permanent magnet synchronous machine allow relatively simply reproduce the harmonic composition of the voltage in the output of a frequency inverter equipped with the control system based on a sinusoidal pulse width modulation. The developed research technique can be used for inverters with any number and composition of voltage harmonic components feeding a stator winding of a permanent magnet synchronous machine. On a particular case, the efficiency of the research technique of the higher harmonics influence on the operating parameters of the generator has been demonstrated. At the same time, the study has been carried out taking into account the shape of the voltage curve feeding the windings of the synchronous machine containing in addition to the fundamental harmonic the 8, 10, 11, 13, 14 and 16-th harmonic components, and the rated active power of the synchronous machine has been equal to 1 500 kW.

  9. Enhanced Self-Biased Magnetoelectric Coupling in Laser-Annealed Pb(Zr,Ti)O3 Thick Film Deposited on Ni Foil.

    Science.gov (United States)

    Palneedi, Haribabu; Maurya, Deepam; Geng, Liwei D; Song, Hyun-Cheol; Hwang, Geon-Tae; Peddigari, Mahesh; Annapureddy, Venkateswarlu; Song, Kyung; Oh, Yoon Seok; Yang, Su-Chul; Wang, Yu U; Priya, Shashank; Ryu, Jungho

    2018-04-04

    Enhanced and self-biased magnetoelectric (ME) coupling is demonstrated in a laminate heterostructure comprising 4 μm-thick Pb(Zr,Ti)O 3 (PZT) film deposited on 50 μm-thick flexible nickel (Ni) foil. A unique fabrication approach, combining room temperature deposition of PZT film by granule spray in vacuum (GSV) process and localized thermal treatment of the film by laser radiation, is utilized. This approach addresses the challenges in integrating ceramic films on metal substrates, which is often limited by the interfacial chemical reactions occurring at high processing temperatures. Laser-induced crystallinity improvement in the PZT thick film led to enhanced dielectric, ferroelectric, and magnetoelectric properties of the PZT/Ni composite. A high self-biased ME response on the order of 3.15 V/cm·Oe was obtained from the laser-annealed PZT/Ni film heterostructure. This value corresponds to a ∼2000% increment from the ME response (0.16 V/cm·Oe) measured from the as-deposited PZT/Ni sample. This result is also one of the highest reported values among similar ME composite systems. The tunability of self-biased ME coupling in PZT/Ni composite has been found to be related to the demagnetization field in Ni, strain mismatch between PZT and Ni, and flexural moment of the laminate structure. The phase-field model provides quantitative insight into these factors and illustrates their contributions toward the observed self-biased ME response. The results present a viable pathway toward designing and integrating ME components for a new generation of miniaturized tunable electronic devices.

  10. Effect of two X-ray tube voltages on detection of approximal caries in digital radiographs. An in vitro study.

    Science.gov (United States)

    Hellén-Halme, Kristina

    2011-04-01

    This study evaluated the effect of two different tube voltages on clinicians' ability to diagnose approximal carious lesions in digital radiographs. One hundred extracted teeth were radiographed twice at two voltage settings, 60 and 70 kV, using a standardized procedure. Seven observers evaluated the radiographs on a standard color monitor pre-calibrated according to DICOM part 14. Evaluations were made at ambient light levels below 50 lx. All observations were analyzed with receiver operating characteristic curves. A histological examination of the teeth served as the criterion standard. A paired t test compared the effects of the two voltages. The significance level was set to p < 0.05. Weighted kappa statistics estimated intra-observer agreement. No significant difference in accuracy of approximal carious lesion diagnosis was found between the two voltage settings. But five observers rated dentin lesions on radiographs exposed at 70 kV better than on radiographs exposed at 60 kV. Intra-observer agreement differed from fair to moderate. There was no significant difference in accuracy of approximal carious lesion diagnosis between digital radiographs exposed with 60 or 70 kV.

  11. Assessment of High-Voltage Photovoltaic Technologies for the Design of a Direct Drive Hall Effect Thruster Solar Array

    Science.gov (United States)

    Mikellides, I. G.; Jongeward, G. A.; Schneider, T.; Carruth, M. R.; Peterson, T.; Kerslake, T. W.; Snyder, D.; Ferguson, D.; Hoskins, A.

    2004-01-01

    A three-year program to develop a Direct Drive Hall-Effect Thruster system (D2HET) begun in 2001 as part of the NASA Advanced Cross-Enterprise Technology Development initiative. The system, which is expected to reduce significantly the power processing, complexity, weight, and cost over conventional low-voltage systems, will employ solar arrays that operate at voltages higher than (or equal to) 300 V. The lessons learned from the development of the technology also promise to become a stepping-stone for the production of the next generation of power systems employing high voltage solar arrays. This paper summarizes the results from experiments conducted mainly at the NASA Marshal Space Flight Center with two main solar array technologies. The experiments focused on electron collection and arcing studies, when the solar cells operated at high voltages. The tests utilized small coupons representative of each solar array technology. A hollow cathode was used to emulate parts of the induced environment on the solar arrays, mostly the low-energy charge-exchange plasma (1012-1013 m-3 and 0.5-1 eV). Results and conclusions from modeling of electron collection are also summarized. The observations from the total effort are used to propose a preliminary, new solar array design for 2 kW and 30-40 kW class, deep space missions that may employ a single or a cluster of Hall- Effect thrusters.

  12. The effect of voltage droop on the output of an electrostatic accelerator free electron laser

    International Nuclear Information System (INIS)

    Wright, C.C.; Al-Shamma'a, A.I.; Lucas, J.; Stuart, R.A.

    2000-01-01

    Electrostatic accelerator FEL oscillators when operated with energy recovery offer the prospect of long pulse, single-mode operation with very narrow linewidth at high-power levels. However, special care with wiggler construction, electron beam steering, and collector design is necessary to reduce the fraction of the electron beam lost before depressed collection to a sufficiently small value to stop the output hopping from one longitudinal mode of the cavity to another due to the droop of the terminal accelerating voltage. We are investigating what minimum recovery fraction is required both experimentally and theoretically. We have constructed a pulsed microwave FEM oscillator having an accelerating voltage of 65 kV supplied by a source, which is a capacitor, charged by a low-current, high-voltage supply. By changing the capacitor value, it is easily possible to achieve a range of voltage droop rates. Furthermore, because the gain bandwidth of the FEM is small, only 1 or 2 longitudinal modes are capable of being amplified at any voltage which eases the problem of analysing mode hopping behaviour. A simple model of mode switching is outlined

  13. Investigating the Effect of Voltage-Switching on Low-Energy Task Scheduling in Hard Real-Time Systems

    Science.gov (United States)

    2005-01-01

    We investigate the effect of voltage-switching on task execution times and energy consumption for dual-speed hard real - time systems , and present a...scheduling algorithm and apply it to two real-life task sets. Our results show that energy can be conserved in embedded real - time systems using energy...aware task scheduling. We also show that switching times have a significant effect on the energy consumed in hard real - time systems .

  14. Subnanosecond breakdown development in high-voltage pulse discharge: Effect of secondary electron emission

    Science.gov (United States)

    Alexandrov, A. L.; Schweigert, I. V.; Zakrevskiy, Dm. E.; Bokhan, P. A.; Gugin, P.; Lavrukhin, M.

    2017-10-01

    A subnanosecond breakdown in high-voltage pulse discharge may be a key tool for superfast commutation of high power devices. The breakdown in high-voltage open discharge at mid-high pressure in helium was studied in experiment and in kinetic simulations. The kinetic model of electron avalanche development was constructed, based on PIC-MCC simulations, including dynamics of electrons, ions and fast helium atoms, produced by ions scattering. Special attention was paid to electron emission processes from cathode, such as: photoemission by Doppler-shifted resonant photons, produced in excitation processes involving fast atoms; electron emission by ions and fast atoms bombardment of cathode; the secondary electron emission (SEE) by hot electrons from bulk plasma. The simulations show that the fast atoms accumulation is the main reason of emission growth at the early stage of breakdown, but at the final stage, when the voltage on plasma gap diminishes, namely the SEE is responsible for subnanosecond rate of current growth. It was shown that the characteristic time of the current growth can be controlled by the SEE yield. The influence of SEE yield for three types of cathode material (titanium, SiC, and CuAlMg-alloy) was tested. By changing the pulse voltage amplitude and gas pressure, the area of existence of subnanosecond breakdown is identified. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time value as small as τs = 0.4 ns, for the pulse voltage amplitude of 5÷12 kV. An increase of gas pressure from 15 Torr to 30 Torr essentially decreases the time of of current front growth, whereas the pulse voltage variation weakly affects the results.

  15. Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

    Science.gov (United States)

    Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

    2018-02-01

    Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

  16. A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

    Science.gov (United States)

    Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

    2015-09-01

    In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

  17. Effects of Cascaded Voltage Collapse and Protection of Many Induction Machine Loads upon Load Characteristics Viewed from Bulk Transmission System

    Science.gov (United States)

    Kumano, Teruhisa

    As known well, two of the fundamental processes which give rise to voltage collapse in power systems are the on load tap changers of transformers and dynamic characteristics of loads such as induction machines. It has been well established that, comparing among these two, the former makes slower collapse while the latter makes faster. However, in realistic situations, the load level of each induction machine is not uniform and it is well expected that only a part of loads collapses first, followed by collapse process of each load which did not go into instability during the preceding collapses. In such situations the over all equivalent collapse behavior viewed from bulk transmission level becomes somewhat different from the simple collapse driven by one aggregated induction machine. This paper studies the process of cascaded voltage collapse among many induction machines by time simulation, where load distribution on a feeder line is modeled by several hundreds of induction machines and static impedance loads. It is shown that in some cases voltage collapse really cascades among induction machines, where the macroscopic load dynamics viewed from upper voltage level makes slower collapse than expected by the aggregated load model. Also shown is the effects of machine protection of induction machines, which also makes slower collapse.

  18. Efficient 2,4-dichloronitrobenzene removal in the coupled BES-UASB reactor: Effect of external voltage mode.

    Science.gov (United States)

    Chen, Hui; Gao, Xinyi; Wang, Caiqin; Shao, Junjie; Xu, Xiangyang; Zhu, Liang

    2017-10-01

    In this study, bioelectrochemical-upflow anaerobic sludge blanket (BES-UASB) system was developed for treatment of 2,4-dichloronitrobenzen (DClNB) containing wastewater to investigate the effect of external voltage with different supplying modes. Results showed that 2,4-dichloroaniline (DClAN) was under detection limit in R1 (applied with intermittent voltage) and R2 (applied with continuous voltage) when the DClNB loading increased from 25 to 100gm 3 d -1 (hydraulic retention time (HRT) was decreased from 24 to 6h) while sudden accumulation of DClAN (1.7mgL -1 ) was observed in R0 (control). Dechlorination efficiency (DE) decreased to 32.7%, 45.0% and 45.3% in R0, R1 and R2 when HRT was further shortened to 4h. Microbial community analysis indicated the significant enrichment of dechlorination-related species in R1 and R2 compared with R0, e.g., Dehalobacter and Dehalococcoides. In summary, the BES-UASB system with intermittent voltage is an alternative process for efficient treatment of DClNB containing wastewater, and the energy input was reduced markedly. Copyright © 2017 Elsevier Ltd. All rights reserved.

  19. Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

    International Nuclear Information System (INIS)

    Eslami, E.; Barjasteh, A.; Morshedian, N.

    2015-01-01

    In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown that applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap

  20. Demonstration of high current carbon nanotube enabled vertical organic field effect transistors at industrially relevant voltages

    Science.gov (United States)

    McCarthy, Mitchell

    The display market is presently dominated by the active matrix liquid crystal display (LCD). However, the active matrix organic light emitting diode (AMOLED) display is argued to become the successor to the LCD, and is already beginning its way into the market, mainly in small size displays. But, for AMOLED technology to become comparable in market share to LCD, larger size displays must become available at a competitive price with their LCD counterparts. A major issue preventing low-cost large AMOLED displays is the thin-film transistor (TFT) technology. Unlike the voltage driven LCD, the OLEDs in the AMOLED display are current driven. Because of this, the mature amorphous silicon TFT backplane technology used in the LCD must be upgraded to a material possessing a higher mobility. Polycrystalline silicon and transparent oxide TFT technologies are being considered to fill this need. But these technologies bring with them significant manufacturing complexity and cost concerns. Carbon nanotube enabled vertical organic field effect transistors (CN-VFETs) offer a unique solution to this problem (now known as the AMOLED backplane problem). The CN-VFET allows the use of organic semiconductors to be used for the semiconductor layer. Organics are known for their low-cost large area processing compatibility. Although the mobility of the best organics is only comparable to that of amorphous silicon, the CN-VFET makes up for this by orienting the channel vertically, as opposed to horizontally (like in conventional TFTs). This allows the CN-VFET to achieve sub-micron channel lengths without expensive high resolution patterning. Additionally, because the CN-VFET can be easily converted into a light emitting transistor (called the carbon nanotube enabled vertical organic light emitting transistor---CN-VOLET) by essentially stacking an OLED on top of the CN-VFET, more potential benefits can be realized. These potential benefits include, increased aperture ratio, increased OLED

  1. Effects of target bias voltage on indium tin oxide films deposited by high target utilisation sputtering

    International Nuclear Information System (INIS)

    Calnan, Sonya; Upadhyaya, Hari M.; Dann, Sandra E.; Thwaites, Mike J.; Tiwari, Ayodhya N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited by reactive High Target Utilisation Sputtering (HiTUS) onto glass and polyimide substrates. The ion plasma was generated by an RF power source while the target bias voltage was varied from 300 V to 500 V using a separate DC power supply. The deposition rate, at constant target power, increased with DC target voltage due to increased ion energy reaching 34 nm/min at 500 V. All the films were polycrystalline and showed strong (400) and (222) reflections with the relative strength of latter increasing with target bias voltage. The resistivity was lowest at 500 V with values of 1.8 x 10 -4 Ω cm and 2.4 x 10 -4 Ω cm on glass and polyimide, respectively but was still less than 5 x 10 -4 Ω cm at 400 V. All films were highly transparent to visible light, (> 80%) but the NIR transmittance decreased with increasing target voltage due to higher free carrier absorption. Therefore, ITO films can be deposited onto semiconductor layers such as in solar cells, with minimal ion damage while maintaining low resistivity

  2. Effect of applied voltage parameters on the electric characteristics of a DBD in coaxial electrode configuration

    NARCIS (Netherlands)

    Petrovic, D.; Martens, T.; De Bie, C.; Brok, W.J.M.; Bogaerts, A.; Schmidt, J.; Simek, M.; Pekarek, S.

    2009-01-01

    A numerical parameter study has been performed for a cylindrical atmospheric pressure dielectric barrier discharge (DBD) in helium with nitrogen impurities using a two-dimensional time dependent fluid model. The calculated electric currents and gap voltages as a function of time for a given applied

  3. The Effect of Swarming on a Voltage Potential-Based Conflict Resolution Algorithm

    NARCIS (Netherlands)

    Maas, J.B.; Sunil, E.; Ellerbroek, J.; Hoekstra, J.M.; Tra, M.A.P.

    2016-01-01

    Several conflict resolution algorithms for airborne self-separation rely on principles derived from the repulsive forces that exist between similarly charged particles. This research investigates whether the performance of the Modified Voltage Potential algorithm, which is based on this algorithm,

  4. Facts and feelings : Framing effects in responses to uncertainties about high-voltage power lines

    NARCIS (Netherlands)

    de Vries, G.; de Bruijn, J.A.

    2017-01-01

    To ensure power supply security, electricity transmission system operators (TSOs) have to upscale high-voltage overhead power lines. However, upscaling frequently meets opposition. Opposition can be caused by uncertainties about risks and benefits and might lead to costly delays (Linder, 1995;

  5. The effect of voltage droop on the output of an electrostatic accelerator free electron laser

    CERN Document Server

    Wright, C C; Lucas, J; Stuart, R A

    2000-01-01

    Electrostatic accelerator FEL oscillators when operated with energy recovery offer the prospect of long pulse, single-mode operation with very narrow linewidth at high-power levels. However, special care with wiggler construction, electron beam steering, and collector design is necessary to reduce the fraction of the electron beam lost before depressed collection to a sufficiently small value to stop the output hopping from one longitudinal mode of the cavity to another due to the droop of the terminal accelerating voltage. We are investigating what minimum recovery fraction is required both experimentally and theoretically. We have constructed a pulsed microwave FEM oscillator having an accelerating voltage of 65 kV supplied by a source, which is a capacitor, charged by a low-current, high-voltage supply. By changing the capacitor value, it is easily possible to achieve a range of voltage droop rates. Furthermore, because the gain bandwidth of the FEM is small, only 1 or 2 longitudinal modes are capable of b...

  6. Effect of selected factors on the current flow and voltage loss at ...

    African Journals Online (AJOL)

    In this paper, laboratory scale study was conducted to investigate the current flow and voltage loss at the electrodes in the electrochemical treatment of a tropical laterite. Three different tests using calcium chloride (CC) as anolyte and sodium chloride (SC) as catholyte (NC); SC as anolyte and Phosphoric acid (PA) as ...

  7. Effects of voltage unbalance and system harmonics on the performance of doubly fed induction wind generators

    Science.gov (United States)

    Kiani, Morgan Mozhgan

    Inherent difficulties in management of electric power in the presence of an increasing demand for more energy, non-conventional loads such as digital appliances, and non-sustainable imported fossil fuels has initiated a multi-folded effort by many countries to restructure the way electric energy is generated, dispatched, and consumed. Smart power grid is the manifestation of many technologies that would eventually transforms the existing power grid into a more flexible, fault resilient, and intelligent system. Integration of distributed renewable energy sources plays a central role in successful implementation of this transformation. Among the renewable options, wind energy harvesting offers superior engineering and economical incentives with minimal environmental impacts. Doubly fed induction generators (DFIG) have turned into a serious contender for wind energy generators due to their flexibility in control of active and reactive power with minimal silicon loss. Significant presence of voltage unbalance and system harmonics in finite inertia transmission lines can potentially undermine the reliability of these wind generators. The present dissertation has investigated the impacts of system unbalances and harmonics on the performance of the DFIG. Our investigation indicates that these effects can result in an undesirable undulation in the rotor shaft which can potentially invoke mechanical resonance, thereby causing catastrophic damages to the installations and the power grid. In order to remedy the above issue, a control solution for real time monitoring of the system unbalance and optimal excitation of the three phase rotor currents in a DFIG is offered. The optimal rotor currents will create appropriate components of the magneto-motive force in the airgap that will actively compensate the undesirable magnetic field originated by the stator windings. Due to the iterative nature of the optimization procedure, field reconstruction method has been incorporated

  8. The effect of fault ride-through requirements on voltage dips and post-fault voltage recovery in a Dutch distribution network

    NARCIS (Netherlands)

    Karaliolios, P.; Coster, E.J.; Slootweg, J.G.; Kling, W.L.

    2010-01-01

    In this paper the possibility to use Decentralized Generation (DG) units for voltage support in Distribution Networks during and after a Short Circuit (S/C) event is discussed. Two types of DG units will be examined, Combined Heat-Power (CHP) plants and Doubly-Fed Induction Generators (DFIG).

  9. The effect of gate voltage on the electrical transport properties in the contacts of C60 to carbon nanotube leads

    Directory of Open Access Journals (Sweden)

    AA Shokri

    2012-06-01

    Full Text Available  In this paper, we examined the effect of gate voltage, bias voltage, contact geometries and the different bond lengths on the electrical transport properties in a nanostructure consisting of C60 molecule attached to two semi-infinite leads made of single wall carbon nanotubes in the coherent regime. Our calculation was based on the Green’s function method within nearest-neighbour tight-binding approximation. After the calculation was of transmission, the electrical current was obtained by the Landauer-Buttiker formula. Next, the effect of the mentioned factors was investigated in the nanostructure. The application of the present results may be useful in designing devices based on molecular electronics in nanoscale.

  10. The effect of high voltage, high frequency pulsed electric field on slain ovine cortical bone.

    Science.gov (United States)

    Asgarifar, Hajarossadat; Oloyede, Adekunle; Zare, Firuz

    2014-04-01

    High power, high frequency pulsed electric fields known as pulsed power (PP) has been applied recently in biology and medicine. However, little attention has been paid to investigate the application of pulse power in musculoskeletal system and its possible effect on functional behavior and biomechanical properties of bone tissue. This paper presents the first research investigating whether or not PP can be applied safely on bone tissue as a stimuli and what will be the possible effect of these signals on the characteristics of cortical bone by comparing the mechanical properties of this type of bone pre and post expose to PP and in comparison with the control samples. A positive buck-boost converter was applied to generate adjustable high voltage, high frequency pulses (up to 500 V and 10 kHz). The functional behavior of bone in response to pulse power excitation was elucidated by applying compressive loading until failure. The stiffness, failure stress (strength) and the total fracture energy (bone toughness) were determined as a measure of the main bone characteristics. Furthermore, an ultrasonic technique was applied to determine and comprise bone elasticity before and after pulse power stimulation. The elastic property of cortical bone samples appeared to remain unchanged following exposure to pulse power excitation for all three orthogonal directions obtained from ultrasonic technique and similarly from the compression test. Nevertheless, the compressive strength and toughness of bone samples were increased when they were exposed to 66 h of high power pulsed electromagnetic field compared to the control samples. As the toughness and the strength of the cortical bone tissue are directly associated with the quality and integrity of the collagen matrix whereas its stiffness is primarily related to bone mineral content these overall results may address that although, the pulse power stimulation can influence the arrangement or the quality of the collagen network

  11. Effect of high-voltage pulsed electric field (HPEF pretreatment on biogas production rates of hybrid Pennisetum by anaerobic fermentation

    Directory of Open Access Journals (Sweden)

    Baijuan Wang

    2018-02-01

    Full Text Available In this paper, the raw materials of hybrid Pennisetum were pretreated in different conditions of high voltage pulsed electric field (HPEF to improve its material utilization ratios and biogas production rates of anaerobic fermentation. Then, anaerobic digestion experiments were conducted within 32 days at moderate temperature (35 °C with TS mass fraction (6%, inoculation rate (20% and initial pH (7.0. It is indicated that compared with the control group, 9 groups of hybrid Pennisetum pretreated by HPEF are obviously superior in gas production efficiency of anaerobic fermentation, and higher in cumulative gas production, peak daily gas production and maximum methane concentration; that the most remarkable stimulation occurs in the HPEF condition of 15 kV/120 Hz/60 min, in that situation, the cumulative gas production in the fermentation period of 32 days is up to 9587 mL, 26.95% higher than that of the control group, the peak daily gas production increases and the range of peak period extends. It is demonstrated that the optimal HPEF pretreatment time is 60 min and three HPEF parameters have a better effect on gas production in the order of voltage > time > frequency; and that the effect degree of treatment parameters on peak daily gas production is voltage, frequency and time in turn. It is concluded that HPEF can improve material utilization ratio and gas production rate of hybrid Pennisetum by anaerobic fermentation and shorten the gas production cycle. By virtue of this physical pretreatment method, the resource of Pennisetum is utilized sufficiently and the classes of energy plants are enlarged effectively. Keywords: Hybrid Pennisetum, Anaerobic fermentation, High voltage pulsed electric field (HPEF, Biogas, Material utilization ratio, Gas generation rate, Model, Stimulation

  12. Effect of nano-imprinting on open-circuit voltage of organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Emah, J.B.; Curry, R.J.; Silva, S.R.P. [Surrey Univ., Guildford (United Kingdom). Advanced Technology Inst.

    2010-07-01

    The open-circuit voltage (V{sub oc}) of solar cells with non-Ohmic contacts are determined by the work function difference of the electrodes. For Ohmic contacts the V{sub oc} is governed by the LUMO and HOMO levels of the acceptor and donor, respectively, which pin the Fermi levels of the cathode and anode. We present a case where the V{sub oc} of a single layer device using poly (3-hexylthiopene-2,5-diyl) (P3HT) as the photoactive material between a nanoimprinted poly poly (3,4-ethylenedioxythiophene) poly (styrene sulfonate)(PEDOT:PSS) and Al electrode decreases due to patterning. The reverse is shown to be the case when [6,6]-phenyl-C{sub 61}-butyric acid ester (PCBM) is introduced to form a bulk heterojunction (BHJ). In both scenarios, there is an increase in the short-circuit current, attributed to an extended optical path length within the photoactive layer and enhanced charge extraction through the increased surface area. The patterned BHJ devices show a 28% and 40% increase in the power conversion efficiency when imprinted with 727 nm and 340 nm periodic patterns respectively. ATR-FTIR investigations of the interfacial PEDOT:PSS film following patterning reveals the presence of PDMS residue which is supported by consideration of the effect on single layer P3HT and P3HT:PCBM blend device performance. UPS measurements demonstrate a reduction in the work function of the interfacial PEDOT:OSS layer by {proportional_to}0.5 eV following nanoimprinting which may originate from chemical modification by the PDMS residue or interfacial dipole formation. XPS spectrum of the imprinted PEDOT:PSS also shows a chemical shift in the 0(1s) core-level towards higher binding energy signifying interaction of the PDMS stamp residue with the PSS dominated surface of PEDOT:PSS. This led to significant improvement in the V{sub oc} and ultimately, the PCE. (orig.)

  13. The effect of high voltage pulsed electric field on water molecular

    Science.gov (United States)

    Fan, Xuejie; Bai, Yaxiang; Ren, Ziying

    2017-10-01

    In order to study the mechanism of high voltage pulsed electric field pre-treatment on the food drying technology. In this paper, water was treated with high pulse electric field (HPEF) in different frequency, and different voltage, then, the viscosity coefficient and the surface tension coefficient of the water were measured. The results showed that indicated that the viscosity coefficient and the surface tension coefficient of the treated water can be decreased, and while HPEF pre-treatment was applied for 22.5kV at a frequency of 50Hz and 70 Hz, the surface tension and the viscosity coefficient of the pre-treatment treatment were reduced 13.1% and 7.5%, respectively.

  14. Effect of driving voltage polarity on dynamic response characteristics of electrowetting liquid lens

    Science.gov (United States)

    Na, Xie; Ning, Zhang; Rong-Qing, Xu

    2018-05-01

    A test device is developed for studying the dynamic process of an electrowetting liquid lens. By analyzing the light signals through the liquid lens, the dynamical properties of the lens are investigated. In our experiment, three types of pulse, i.e., sine, bipolar pulse, and single pulse signals, are employed to drive the liquid lens, and the dynamic characteristics of the lens are subsequently analyzed. The results show that the positive and negative polarities of the driving voltage can cause a significant difference in the response of the liquid lens; meanwhile, the lens’s response to the negative polarity of the driving voltage is clearer. We use the theory of charge restraint to explain this phenomenon, and it is concluded that the negative ions are more easily restrained by a dielectric layer. This work gives direct guidance for practical applications based on an electrowetting liquid lens.

  15. Effect of Voltage and Flow Rate Electrospinning Parameters on Polyacrylonitrile Electrospun Fibers

    Science.gov (United States)

    Bakar, S. S. S.; Fong, K. C.; Eleyas, A.; Nazeri, M. F. M.

    2018-03-01

    Currently, electrospinning is a very famous technique and widely used for forming polymer nanofibers. In this paper, the Polyacrylonitrile (PAN) nanofibers were prepared in concentration of 10wt% with varied processing parameters that can affect the properties of PAN fiber in term of fiber diameter and electrical conductivity was presented. Voltage of 10, 15 and 20 kV with PAN flow rate of 1 electrospun PAN fibers were then undergo pyrolysis at 800°C for 30 minutes. The resultant PAN nanofibers were then analysed by SEM, XRD and four point probe test after pyrolysis process. SEM image show continuos uniform and smooth surface fibrous structure of electrospun PAN fibers with average diameter of 1.81 μm. The fiber morphology is controlled by manipulating the processing parameters of electrospinning process. The results showed that the resistance of electrospun PAN fibers decreases as the processing parameter changes by increasing the applied voltage and flow rate of electrospinning.

  16. Effect of applied voltage on phase components of composite coatings prepared by micro-arc oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Wenjun [Department of Prosthodontics, Guanghua School of Stomatology, Sun Yat-sen University, Guangzhou 510055 (China); Fang, Yu-Jing [Department of Colorectal Surgery, State Key Laboratory of Oncology in South China, Sun Yat-sen University Cancer Center, Guangzhou 510060 (China); Zheng, Huade [College of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Tan, Guoxin [Guangdong University of Technology, Guangdong Province 510006 (China); Cheng, Haimei [College of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Ning, Chengyun, E-mail: imcyning@scut.edu.cn [College of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)

    2013-10-01

    In this report, we present results from our experiments on composite coatings formed on biomedical titanium substrates by micro-arc oxidation (MAO) in constant-voltage mode. The coatings were prepared on the substrates in an aqueous electrolyte containing calcium acetate and β-glycerol phosphate disodium salt pentahydrate (β-GP). We analyzed the element distribution and phase components of the coatings prepared at different voltages by X-ray diffraction, thin-coating X-ray diffraction, electron-probe microanalysis, and Fourier-transform infrared spectroscopy. The results show that the composite coatings formed at 500 V consist of titania (TiO{sub 2}), hydroxylapatite (HA), and calcium carbonate (CaCO{sub 3}). Furthermore, the concentration of Ca, P, and Ti gradually changes with increasing applied voltage, and the phase components of the composite coatings gradually change from the bottom of the coating to the top: the bottom layer consists of TiO{sub 2}, the middle layer consists of TiO{sub 2} and HA, and the top layer consists of HA and a small amount of CaCO{sub 3}. The formation of HA directly on the coating surface by MAO technique can greatly enhance the surface bioactivity. - Highlights: • Coatings prepared on biomedical titanium substrate by micro-arc oxidation • Coatings composed of titania, hydroxyapatite and calcium carbonate • Hydroxyapatite on the coating surface can enhance the surface bioactivity.

  17. Dynamics and Collapse in a Power System Model with Voltage Variation: The Damping Effect.

    Science.gov (United States)

    Ma, Jinpeng; Sun, Yong; Yuan, Xiaoming; Kurths, Jürgen; Zhan, Meng

    2016-01-01

    Complex nonlinear phenomena are investigated in a basic power system model of the single-machine-infinite-bus (SMIB) with a synchronous generator modeled by a classical third-order differential equation including both angle dynamics and voltage dynamics, the so-called flux decay equation. In contrast, for the second-order differential equation considering the angle dynamics only, it is the classical swing equation. Similarities and differences of the dynamics generated between the third-order model and the second-order one are studied. We mainly find that, for positive damping, these two models show quite similar behavior, namely, stable fixed point, stable limit cycle, and their coexistence for different parameters. However, for negative damping, the second-order system can only collapse, whereas for the third-order model, more complicated behavior may happen, such as stable fixed point, limit cycle, quasi-periodicity, and chaos. Interesting partial collapse phenomena for angle instability only and not for voltage instability are also found here, including collapse from quasi-periodicity and from chaos etc. These findings not only provide a basic physical picture for power system dynamics in the third-order model incorporating voltage dynamics, but also enable us a deeper understanding of the complex dynamical behavior and even leading to a design of oscillation damping in electric power systems.

  18. Effects of high voltage pulse trimming on structural properties of thick-film resistors

    Directory of Open Access Journals (Sweden)

    Stanimirović Zdravko

    2017-01-01

    Full Text Available Nowadays, compact and reliable electronic devices including up-to-date ceramic micro-electro-mechanical systems require thick-film resistors with significantly reduced dimensions and stable and precise resistance values. For that reason, instead of standard laser trimming method, high voltage pulse trimming of thick-film resistors is being introduced. This method allows controlled and reliable resistance adjustment regardless of resistor position or dimensions and without the presence of cuts. However, it causes irreversible structural changes in the pseudorandom network formed during sintering causing the changes in conducting mechanisms. In this paper results of the experimental investigation of high voltage pulse trimming of thick-film resistors are presented. Obtained results are analyzed and correlations between resistance and low-frequency noise changes and changes in conducting mechanisms in resistors due to high voltage pulse trimming are observed. Sources of measured fluctuations are identified and it is shown that this type of trimming is a valid alternative trimming method to the dominant laser trimming. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III44003 and III45007

  19. Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

    Science.gov (United States)

    Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

    2017-11-01

    The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

  20. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    International Nuclear Information System (INIS)

    Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

  1. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

    International Nuclear Information System (INIS)

    Li Qi; Wang Weidong; Zhao Qiuming; Wei Xueming

    2012-01-01

    A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a lowon-resistance. (semiconductor devices)

  2. Plasmas in saline solutions sustained using rectified ac voltages: polarity and frequency effects on the discharge behaviour

    International Nuclear Information System (INIS)

    Chang Hungwen; Hsu Chengche

    2012-01-01

    In this work, three major problems, namely severe electrode damage, poor plasma stability and excess power consumption, arising in ac-driven plasmas in saline solutions are solved using a rectified power source. Diagnostic studies on the effects of power source polarity and frequency on the plasma behaviour are performed. Examination of I-V characteristics and temporally resolved light emission shows that the polarity significantly influences the current amplitude when the plasma exists, while the frequency alters the bubble dynamics, which in turn affects the plasma ignition voltage. When the plasma is driven by a rectified ac power source, the electrode erosion is reduced substantially. With a low frequency, moderate applied voltage and positively rectified ac power source (e.g. 100 Hz and 350 V), a stable plasma is ignited in nearly every power cycle. (paper)

  3. Stability Analysis of a Matrix Converter Drive: Effects of Input Filter Type and the Voltage Fed to the Modulation Algorithm

    Directory of Open Access Journals (Sweden)

    M. Hosseini Abardeh

    2015-03-01

    Full Text Available The matrix converter instability can cause a substantial distortion in the input currents and voltages which leads to the malfunction of the converter. This paper deals with the effects of input filter type, grid inductance, voltage fed to the modulation algorithm and the synchronous rotating digital filter time constant on the stability and performance of the matrix converter. The studies are carried out using eigenvalues of the linearized system and simulations. Two most common schemes for the input filter (LC and RLC are analyzed. It is shown that by a proper choice of voltage input to the modulation algorithm, structure of the input filter and its parameters, the need for the digital filter for ensuring the stability can be resolved. Moreover, a detailed model of the system considering the switching effects is simulated and the results are used to validate the analytical outcomes. The agreement between simulation and analytical results implies that the system performance is not deteriorated by neglecting the nonlinear switching behavior of the converter. Hence, the eigenvalue analysis of the linearized system can be a proper indicator of the system stability.

  4. Investigation of the Effects of Facility Background Pressure on the Performance and Voltage-Current Characteristics of the High Voltage Hall Accelerator

    Science.gov (United States)

    Kamhawi, Hani; Huang, Wensheng; Haag, Thomas; Spektor, Rostislav

    2014-01-01

    The National Aeronautics and Space Administration (NASA) Science Mission Directorate In-Space Propulsion Technology office is sponsoring NASA Glenn Research Center to develop a 4 kW-class Hall thruster propulsion system for implementation in NASA science missions. A study was conducted to assess the impact of varying the facility background pressure on the High Voltage Hall Accelerator (HiVHAc) thruster performance and voltage-current characteristics. This present study evaluated the HiVHAc thruster performance in the lowest attainable background pressure condition at NASA GRC Vacuum Facility 5 to best simulate space-like conditions. Additional tests were performed at selected thruster operating conditions to investigate and elucidate the underlying physics that change during thruster operation at elevated facility background pressure. Tests were performed at background pressure conditions that are three and ten times higher than the lowest realized background pressure. Results indicated that the thruster discharge specific impulse and efficiency increased with elevated facility background pressure. The voltage-current profiles indicated a narrower stable operating region with increased background pressure. Experimental observations of the thruster operation indicated that increasing the facility background pressure shifted the ionization and acceleration zones upstream towards the thruster's anode. Future tests of the HiVHAc thruster are planned at background pressure conditions that are expected to be two to three times lower than what was achieved during this test campaign. These tests will not only assess the impact of reduced facility background pressure on thruster performance, voltage-current characteristics, and plume properties; but will also attempt to quantify the magnitude of the ionization and acceleration zones upstream shifting as a function of increased background pressure.

  5. A Small-Area Self-Biased Wideband CMOS Balun LNA with Noise Cancelling and Gain Enhancement

    DEFF Research Database (Denmark)

    Bruun, Erik; Andreani, Pietro; Custódio, J. R.

    2010-01-01

    In this paper we present a low-power and small-area balun LNA. The proposed inverter-based topology uses selfbiasing and noise cancelling, yielding a very robust LNA with a low NF. Comparing this circuit with a conventional inverterbased circuit, we obtain a ∼3 dB enhancement in voltage gain......, with improved robustness against PVT variations. Simulations results in a 130 nm CMOS technology show a 17.7dB voltage gain, nearly flat over a wide bandwidth (200MHz-1GHz), and an NF of approximately 4dB. The total power consumption is below 7.5 mW, with a very small die area of 0.007 mm2. All data...

  6. Electromagnetic fields (UHF) increase voltage sensitivity of membrane ion channels; possible indication of cell phone effect on living cells.

    Science.gov (United States)

    Ketabi, N; Mobasheri, H; Faraji-Dana, R

    2015-03-01

    The effects of ultra high frequency (UHF) nonionizing electromagnetic fields (EMF) on the channel activities of nanopore forming protein, OmpF porin, were investigated. The voltage clamp technique was used to study the single channel activity of the pore in an artificial bilayer in the presence and absence of the electromagnetic fields at 910 to 990 MHz in real time. Channel activity patterns were used to address the effect of EMF on the dynamic, arrangement and dielectric properties of water molecules, as well as on the hydration state and arrangements of side chains lining the channel barrel. Based on the varied voltage sensitivity of the channel at different temperatures in the presence and absence of EMF, the amount of energy transferred to nano-environments of accessible groups was estimated to address the possible thermal effects of EMF. Our results show that the effects of EMF on channel activities are frequency dependent, with a maximum effect at 930 MHz. The frequency of channel gating and the voltage sensitivity is increased when the channel is exposed to EMF, while its conductance remains unchanged at all frequencies applied. We have not identified any changes in the capacitance and permeability of membrane in the presence of EMF. The effect of the EMF irradiated by cell phones is measured by Specific Absorption Rate (SAR) in artificial model of human head, Phantom. Thus, current approach applied to biological molecules and electrolytes might be considered as complement to evaluate safety of irradiating sources on biological matter at molecular level.

  7. Magnetic fields and childhood cancer: an epidemiological investigation of the effects of high-voltage underground cables

    International Nuclear Information System (INIS)

    Bunch, K J; Vincent, T J; Murphy, M F G; Swanson, J

    2015-01-01

    Epidemiological evidence of increased risks for childhood leukaemia from magnetic fields has implicated, as one source of such fields, high-voltage overhead lines. Magnetic fields are not the only factor that varies in their vicinity, complicating interpretation of any associations. Underground cables (UGCs), however, produce magnetic fields but have no other discernible effects in their vicinity. We report here the largest ever epidemiological study of high voltage UGCs, based on 52 525 cases occurring from 1962–2008, with matched birth controls. We calculated the distance of the mother’s address at child’s birth to the closest 275 or 400 kV ac or high-voltage dc UGC in England and Wales and the resulting magnetic fields. Few people are exposed to magnetic fields from UGCs limiting the statistical power. We found no indications of an association of risk with distance or of trend in risk with increasing magnetic field for leukaemia, and no convincing pattern of risks for any other cancer. Trend estimates for leukaemia as shown by the odds ratio (and 95% confidence interval) per unit increase in exposure were: reciprocal of distance 0.99 (0.95–1.03), magnetic field 1.01 (0.76–1.33). The absence of risk detected in relation to UGCs tends to add to the argument that any risks from overhead lines may not be caused by magnetic fields. (paper)

  8. Effect of Copper and Silicon on Al-5%Zn Alloy as a Candidate Low Voltage Sacrificial Anode

    Science.gov (United States)

    Pratesa, Yudha; Ferdian, Deni; Togina, Inez

    2017-05-01

    One common method used for corrosion protection is a sacrificial anode. Sacrificial anodes that usually employed in the marine environment are an aluminum alloy sacrificial anode, especially Al-Zn-In. However, the electronegativity of these alloys can cause corrosion overprotection and stress cracking (SCC) on a high-strength steel. Therefore, there is a development of the sacrificial anode aluminum low voltage to reduce the risk of overprotection. The addition of alloying elements such as Cu, Si, and Ge will minimize the possibility of overprotection. This study was conducted to analyze the effect of silicon and copper addition in Al-5Zn. The experiment started from casting the sacrificial anode aluminum uses electrical resistance furnace in a graphite crucible in 800°C. The results alloy was analyzed using Optical emission spectroscopy (OES), Differential scanning calorimetry, electrochemical impedance spectroscopy, and metallography. Aluminum alloy with the addition of a copper alloy is the most suitable and efficient to serve as a low-voltage sacrificial anode aluminum. Charge transfer resistivity of copper is smaller than silicon which indicates that the charge transfer between the metal and the electrolyte is easier t to occur. Also, the current potential values in coupling with steel are also in the criteria range of low-voltage aluminum sacrificial anodes.

  9. Effect of ciguatoxin 3C on voltage-gated Na+ and K+ currents in mouse taste cells.

    Science.gov (United States)

    Ghiaroni, Valeria; Fuwa, Haruhiko; Inoue, Masayuki; Sasaki, Makoto; Miyazaki, Keisuke; Hirama, Masahiro; Yasumoto, Takeshi; Rossini, Gian Paolo; Scalera, Giuseppe; Bigiani, Albertino

    2006-09-01

    The marine dinoflagellate Gambierdiscus toxicus produces highly lipophilic, polycyclic ether toxins that cause a seafood poisoning called ciguatera. Ciguatoxins (CTXs) and gambierol represent the two major causative agents of ciguatera intoxication, which include taste alterations (dysgeusiae). However, information on the mode of action of ciguatera toxins in taste cells is scarce. Here, we have studied the effect of synthetic CTX3C (a CTX congener) on mouse taste cells. By using the patch-clamp technique to monitor membrane ion currents, we found that CTX3C markedly affected the operation of voltage-gated Na(+) channels but was ineffective on voltage-gated K(+) channels. This result was the exact opposite of what we obtained earlier with gambierol, which inhibits K(+) channels but not Na(+) channels. Thus, CTXs and gambierol affect with high potency the operation of separate classes of voltage-gated ion channels in taste cells. Our data suggest that taste disturbances reported in ciguatera poisoning might be due to the ability of ciguatera toxins to interfere with ion channels in taste buds.

  10. Novel analytical model for optimizing the pull-in voltage in a flexured MEMS switch incorporating beam perforation effect

    Science.gov (United States)

    Guha, K.; Laskar, N. M.; Gogoi, H. J.; Borah, A. K.; Baishnab, K. L.; Baishya, S.

    2017-11-01

    This paper presents a new method for the design, modelling and optimization of a uniform serpentine meander based MEMS shunt capacitive switch with perforation on upper beam. The new approach is proposed to improve the Pull-in Voltage performance in a MEMS switch. First a new analytical model of the Pull-in Voltage is proposed using the modified Mejis-Fokkema capacitance model taking care of the nonlinear electrostatic force, the fringing field effect due to beam thickness and etched holes on the beam simultaneously followed by the validation of same with the simulated results of benchmark full 3D FEM solver CoventorWare in a wide range of structural parameter variations. It shows a good agreement with the simulated results. Secondly, an optimization method is presented to determine the optimum configuration of switch for achieving minimum Pull-in voltage considering the proposed analytical mode as objective function. Some high performance Evolutionary Optimization Algorithms have been utilized to obtain the optimum dimensions with less computational cost and complexity. Upon comparing the applied algorithms between each other, the Dragonfly Algorithm is found to be most suitable in terms of minimum Pull-in voltage and higher convergence speed. Optimized values are validated against the simulated results of CoventorWare which shows a very satisfactory results with a small deviation of 0.223 V. In addition to these, the paper proposes, for the first time, a novel algorithmic approach for uniform arrangement of square holes in a given beam area of RF MEMS switch for perforation. The algorithm dynamically accommodates all the square holes within a given beam area such that the maximum space is utilized. This automated arrangement of perforation holes will further improve the computational complexity and design accuracy of the complex design of perforated MEMS switch.

  11. Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors

    International Nuclear Information System (INIS)

    Chen Zuhui; Jie Binbin; Sah Chihtang

    2010-01-01

    Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO 2 /Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range. (invited papers)

  12. Effects of low voltage electrolysis and freezing on coliform content of contaminated water

    International Nuclear Information System (INIS)

    Qazi, J.I.; Saleem, F.

    2003-01-01

    A sewage sample was mixed with drinking water and subjected to low voltage (15V) electrolysis in the presence of 1% NaCl. The prepared sample was also kept in freezer with and without the presence of sodium chloride for 4-hours. Among these treatments the electrolysis proved to kill the coliforms, while the freezing reduced the bacterial content. Antibiotics sensitivity patterns revealed that certain of the coliform strains survived the freezing and thawing shocks. Nature of such surviving bacteria and need to study chemical parameters of electrolyzed water are discussed. (author)

  13. Effect of recombination on the open-circuit voltage of a silicon solar cell

    Science.gov (United States)

    Von Roos, O.; Landsberg, P. T.

    1985-01-01

    A theoretical study of the influence of band-band Auger, band-trap Auger, and the ordinary Shockley-Read-Hall mechanism for carrier recombination on the open-circuit voltage VOC of a solar cell is presented. Under reasonable assumptions for the magnitude of rate constants and realistic values for trap densities, surface recombination velocities and band-gap narrowing, the maximum VOC for typical back surface field solar cells is found to lie in the range between 0.61 and 0.72 V independent of base width.

  14. Electrode configuration effects on the electrification and voltage variation in an electrostatic inkjet printing head

    International Nuclear Information System (INIS)

    Choi, Kyung Hyun; Ali, Adnan; Rahman, Ahsan; Malik Mohammad, Nauman; Rahman, Khalid; Khan, Arshad; Khan, Saleem; Kim, D S

    2010-01-01

    The electrode configuration of an electrostatic inkjet printing head is under study. This paper introduces the development of a new electrostatic inkjet head with an improved electrode configuration as compared to the conventional configuration. Two tungsten electrodes, connected in parallel, are inserted into the electrostatic print head at a certain angle from opposite sides. The aim of this double-side inserted angular electrodes (DSIAEs) head is to intensify the electrification of the fluid inside the head at minimum suitable exposure of the electrode, which results in maximizing surface charge density. The main advantage of the DSIAEs head is to get a very stable meniscus at low applied voltage for printing. This stable meniscus is transformed to a very stable jet by increasing the applied voltage. Therefore, printed patterns obtained with this DSIAEs head are more uniform because of a more stable meniscus and jet as compared to a conventional electrostatic vertically inserted single electrode head. Also, with this DSIAEs configuration, the life of the electrostatic inkjet printing head is increased.

  15. Effect of angiotensin II-induced arterial hypertension on the voltage-dependent contractions of mouse arteries.

    Science.gov (United States)

    Fransen, Paul; Van Hove, Cor E; Leloup, Arthur J A; Schrijvers, Dorien M; De Meyer, Guido R Y; De Keulenaer, Gilles W

    2016-02-01

    Arterial hypertension (AHT) affects the voltage dependency of L-type Ca(2+) channels in cardiomyocytes. We analyzed the effect of angiotensin II (AngII)-induced AHT on L-type Ca(2+) channel-mediated isometric contractions in conduit arteries. AHT was induced in C57Bl6 mice with AngII-filled osmotic mini-pumps (4 weeks). Normotensive mice treated with saline-filled osmotic mini-pumps were used for comparison. Voltage-dependent contractions mediated by L-type Ca(2+) channels were studied in vaso-reactive studies in vitro in isolated aortic and femoral arteries by using extracellular K(+) concentration-response (KDR) experiments. In aortic segments, AngII-induced AHT significantly sensitized isometric contractions induced by elevated extracellular K(+) and depolarization. This sensitization was partly prevented by normalizing blood pressure with hydralazine, suggesting that it was caused by AHT rather than by direct AngII effects on aortic smooth muscle cells. The EC50 for extracellular K(+) obtained in vitro correlated significantly with the rise in arterial blood pressure induced by AngII in vivo. The AHT-induced sensitization persisted when aortic segments were exposed to levcromakalim or to inhibitors of basal nitric oxide release. Consistent with these observations, AngII-treatment also sensitized the vaso-relaxing effects of the L-type Ca(2+) channel blocker diltiazem during K(+)-induced contractions. Unlike aorta, AngII-treatment desensitized the isometric contractions to depolarization in femoral arteries pointing to vascular bed specific responses of arteries to hypertension. AHT affects the voltage-dependent L-type Ca(2+) channel-mediated contraction of conduit arteries. This effect may contribute to the decreased vascular compliance in AHT and explain the efficacy of Ca(2+) channel blockers to reduce vascular stiffness and central blood pressure in AHT.

  16. Ionization asymmetry effects on the properties modulation of atmospheric pressure dielectric barrier discharge sustained by tailored voltage waveforms

    Science.gov (United States)

    Zhang, Z. L.; Nie, Q. Y.; Zhang, X. N.; Wang, Z. B.; Kong, F. R.; Jiang, B. H.; Lim, J. W. M.

    2018-04-01

    The dielectric barrier discharge (DBD) is a promising technology to generate high density and uniform cold plasmas in atmospheric pressure gases. The effective independent tuning of key plasma parameters is quite important for both application-focused and fundamental studies. In this paper, based on a one-dimensional fluid model with semi-kinetics treatment, numerical studies of ionization asymmetry effects on the properties modulation of atmospheric DBD sustained by tailored voltage waveforms are reported. The driving voltage waveform is characterized by an asymmetric-slope fundamental sinusoidal radio frequency signal superimposing one or more harmonics, and the effects of the number of harmonics, phase shift, as well as the fluctuation of harmonics on the sheath dynamics, impact ionization of electrons and key plasma parameters are investigated. The results have shown that the electron density can exhibit a substantial increase due to the effective electron heating by a spatially asymmetric sheath structure. The strategic modulation of harmonics number and phase shift is capable of raising the electron density significantly (e.g., nearly three times in this case), but without a significant increase in the gas temperature. Moreover, by tailoring the fluctuation of harmonics with a steeper slope, a more profound efficiency in electron impact ionization can be achieved, and thus enhancing the electron density effectively. This method then enables a novel alternative approach to realize the independent control of the key plasma parameters under atmospheric pressure.

  17. Magnetosphere-ionosphere coupling currents in Jupiter's middle magnetosphere: effect of magnetosphere-ionosphere decoupling by field-aligned auroral voltages

    Directory of Open Access Journals (Sweden)

    J. D. Nichols

    2005-03-01

    Full Text Available We consider the effect of field-aligned voltages on the magnetosphere-ionosphere coupling current system associated with the breakdown of rigid corotation of equatorial plasma in Jupiter's middle magnetosphere. Previous analyses have assumed perfect mapping of the electric field and flow along equipotential field lines between the equatorial plane and the ionosphere, whereas it has been shown that substantial field-aligned voltages must exist to drive the field-aligned currents associated with the main auroral oval. The effect of these field-aligned voltages is to decouple the flow of the equatorial and ionospheric plasma, such that their angular velocities are in general different from each other. In this paper we self-consistently include the field-aligned voltages in computing the plasma flows and currents in the system. A third order differential equation is derived for the ionospheric plasma angular velocity, and a power series solution obtained which reduces to previous solutions in the limit that the field-aligned voltage is small. Results are obtained to second order in the power series, and are compared to the original zeroth order results with no parallel voltage. We find that for system parameters appropriate to Jupiter the effect of the field-aligned voltages on the solutions is small, thus validating the results of previously-published analyses.

  18. Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

    Directory of Open Access Journals (Sweden)

    P. T. Tue

    2013-01-01

    Full Text Available We adopted a lanthanum oxide capping layer between semiconducting channel and insulator layers for fabrication of a ferroelectric-gate thin-film transistor memory (FGT which uses solution-processed indium-tin-oxide (ITO and lead-zirconium-titanate (PZT film as a channel layer and a gate insulator, respectively. Good transistor characteristics such as a high “on/off” current ratio, high channel mobility, and a large memory window of 108, 15.0 cm2 V−1 s−1, and 3.5 V were obtained, respectively. Further, a correlation between effective coercive voltage, charge injection effect, and FGT’s memory window was investigated. It is found that the charge injection from the channel to the insulator layer, which occurs at a high electric field, dramatically influences the memory window. The memory window’s enhancement can be explained by a dual effect of the capping layer: (1 a reduction of the charge injection and (2 an increase of effective coercive voltage dropped on the insulator.

  19. Effect of secretin and inhibitors of HCO3-/H+ transport on the membrane voltage of rat pancreatic duct cells

    DEFF Research Database (Denmark)

    Novak, I; Pahl, C

    1993-01-01

    depolarized the basolateral membrane voltage, Vbl, by up to 35 mV (n = 37); a half-maximal response was obtained at 3 x 10(-11) mol/l. In unstimulated ducts a decrease in the luminal Cl- concentration (120 to 37 mmol/l) had a marginal effect on Vbl, but after maximal secretin stimulation it evoked a 14 +/- 2......), respectively. The fractional resistance of the basolateral membrane (FRbl) doubled, and the depolarizing responses to changes in bath K+ concentrations (5 to 20 mmol/l) decreased from 22 +/- 1 to 11 +/- 2 mV.(ABSTRACT TRUNCATED AT 250 WORDS)...

  20. Recommendation on the Environmental Effect Report for the high-voltage transmission line between Netherlands and Norway

    International Nuclear Information System (INIS)

    1998-01-01

    The recommendation on the title subject was addressed to the Dutch Minister of Economic Affairs and concerns the environmental impact of the new high-voltage transmission line (NorNed cable) from Norway to the Eemshaven in Groningen, Netherlands. In planning this power cable the environmental impact on the Wadden Sea has to be taken into account. Therefore an environmental effect report (MER, abbreviated in Dutch) has been drafted by the Dutch cooperative of electric power generating companies, Sep, and commented by the WaddenAdviesRaad

  1. Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

    Science.gov (United States)

    Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

    2018-04-01

    This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

  2. The Sterilization Effect of Cooperative Treatment of High Voltage Electrostatic Field and Variable Frequency Pulsed Electromagnetic Field on Heterotrophic Bacteria in Circulating Cooling Water

    Science.gov (United States)

    Gao, Xuetong; Liu, Zhian; Zhao, Judong

    2018-01-01

    Compared to other treatment of industrial circulating cooling water in the field of industrial water treatment, high-voltage electrostatic field and variable frequency pulsed electromagnetic field co-sterilization technology, an advanced technology, is widely used because of its special characteristics--low energy consumption, nonpoisonous and environmentally friendly. In order to get a better cooling water sterilization effect under the premise of not polluting the environment, some experiments about sterilization of heterotrophic bacteria in industrial circulating cooling water by cooperative treatment of high voltage electrostatic field and variable frequency pulsed electromagnetic field were carried out. The comparison experiment on the sterilization effect of high-voltage electrostatic field and variable frequency pulsed electromagnetic field co-sterilization on heterotrophic bacteria in industrial circulating cooling water was carried out by change electric field strength and pulse frequency. The results show that the bactericidal rate is selective to the frequency and output voltage, and the heterotrophic bacterium can only kill under the condition of sweep frequency range and output voltage. When the voltage of the high voltage power supply is 4000V, the pulse frequency is 1000Hz and the water temperature is 30°C, the sterilization rate is 48.7%, the sterilization rate is over 90%. Results of this study have important guiding significance for future application of magnetic field sterilization.

  3. Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

    International Nuclear Information System (INIS)

    Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

    1985-05-01

    When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance

  4. "Water-in-salt" electrolytes enable the use of cost-effective aluminum current collectors for aqueous high-voltage batteries.

    Science.gov (United States)

    Kühnel, R-S; Reber, D; Remhof, A; Figi, R; Bleiner, D; Battaglia, C

    2016-08-16

    The extended electrochemical stability window offered by highly concentrated electrolytes allows the operation of aqueous batteries at voltages significantly above the thermodynamic stability limit of water, at which the stability of the current collector potentially limits the cell voltage. Here we report the observation of suppressed anodic dissolution of aluminum in "water-in-salt" electrolytes enabling roll-to-roll electrode fabrication for high-voltage aqueous lithium-ion batteries on cost-effective light-weight aluminum current collectors using established lithium-ion battery technology.

  5. High frequency breakdown voltage

    International Nuclear Information System (INIS)

    Chu, Thanh Duy.

    1992-03-01

    This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

  6. Effects of switching frequency and leakage inductance on slow-scale stability in a voltage controlled flyback converter

    International Nuclear Information System (INIS)

    Wang Fa-Qiang; Ma Xi-Kui

    2013-01-01

    The effects of both the switching frequency and the leakage inductance on the slow-scale stability in a voltage controlled flyback converter are investigated in this paper. Firstly, the system description and its mathematical model are presented. Then, the improved averaged model, which covers both the switching frequency and the leakage inductance, is established, and the effects of these two parameters on the slow-scale stability in the system are analyzed. It is found that the occurrence of Hopf bifurcation in the system is the main reason for losing its slow-scale stability and both the switching frequency and the leakage inductance have an important effect on this slow-scale stability. Finally, the effectiveness of the improved averaged model and that of the corresponding theoretical analysis are confirmed by the simulation results and the experimental results. (general)

  7. Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

    International Nuclear Information System (INIS)

    Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Park, Chan Eon; Choi, Woon-Seop

    2010-01-01

    Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

  8. The effect of using sun tracking systems on the voltage-current characteristics and power generation of flat plate photovoltaics

    International Nuclear Information System (INIS)

    Abdallah, Salah

    2004-01-01

    An experimental study was performed to investigate the effect of using different types of sun tracking systems on the voltage-current characteristics and electrical power generation at the output of flat plate photovoltaics (FPPV). Four electromechanical sun tracking systems, two axes, one axis vertical, one axis east-west and one axis north-south, were designed and constructed for the purpose of investigating the effect of tracking on the electrical values, current, voltage and power, according to the different loads (variable resistance). The above mentioned variables were measured at the output of the FPPV and compared with those on a fixed surface. The results indicated that the volt-ampere characteristics on the tracking surfaces were significantly greater than that on a fixed surface. There were increases of electrical power gain up to 43.87%, 37.53%, 34.43% and 15.69% for the two axes, east-west, vertical and north-south tracking, respectively, as compared with the fixed surface inclined 32 deg. to the south in Amman, Jordan

  9. Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

    International Nuclear Information System (INIS)

    Yu Jun-Ting; Chen Shu-Ming; Chen Jian-Jun; Huang Peng-Cheng; Song Rui-Qiang

    2016-01-01

    Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications. (paper)

  10. Effect of Extended State Observer and Automatic Voltage Regulator on Synchronous Machine Connected to Infinite Bus Power System

    Science.gov (United States)

    Angu, Rittu; Mehta, R. K.

    2018-04-01

    This paper presents a robust controller known as Extended State Observer (ESO) in order to improve the stability and voltage regulation of a synchronous machine connected to an infinite bus power system through a transmission line. The ESO-based control scheme is implemented with an automatic voltage regulator in conjunction with an excitation system to enhance the damping of low frequency power system oscillations, as the Power System Stabilizer (PSS) does. The implementation of PSS excitation control techniques however requires reliable information about the entire states, though they are not always directly measureable. To address this issue, the proposed ESO provides the estimate of system states as well as disturbance state together in order to improve not only the damping but also compensates system efficiently in presence of parameter uncertainties and external disturbances. The Closed-Loop Poles (CLPs) of the system have been assigned by the symmetric root locus technique, with the desired level of system damping provided by the dominant CLPs. The performance of the system is analyzed through simulating at different operating conditions. The control method is not only capable of providing zero estimation error in steady-state, but also shows robustness in tracking the reference command under parametric variations and external disturbances. Illustrative examples have been provided to demonstrate the effectiveness of the developed methodology.

  11. A new method for compensation of the effect of charging transformer's leakage inductance on PFN voltage regulation in Klystron pulse modulators

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Akhil, E-mail: akhilpatel@rrcat.gov.in; Kale, Umesh; Shrivastava, Purushottam

    2017-04-21

    The Line type modulators have been widely used to generate high voltage rectangular pulses to power the klystron for high power RF generation. In Line type modulator, the Pulse Forming Network (PFN) which is a cascade combination of lumped capacitors and inductors is used to store the electrical energy. The charged PFN is then discharged into a klystron by firing a high voltage Thyratron switch. This discharge generates a high voltage rectangular pulse across the klystron electrodes. The amplitude and phase of Klystron's RF output is governed by the high voltage pulse amplitude. The undesired RF amplitude and phase stability issues arises at the klystron's output due to inter-pulse and during the pulse amplitude variations. To reduce inter-pulse voltage variations, the PFN is required to be charged at the same voltage after every discharge cycle. At present, the combination of widely used resonant charging and deQing method is used to regulate the pulse to pulse PFN voltage variations but the charging transformer's leakage inductance puts an upper bound on the regulation achievable by this method. Here we have developed few insights of the deQing process and devised a new compensation method to compensate this undesired effect of charging transformer's leakage inductance on the pulse to pulse PFN voltage stability. This compensation is accomplished by the controlled partial discharging of the split PFN capacitor using a low voltage MOSFET switch. Theoretically, very high values of pulse to pulse voltage stability may be achieved using this method. This method may be used in deQing based existing modulators or in new modulators, to increase the pulse to pulse voltage stability, without having a very tight bound on charging transformer's leakage inductance. Given a stable charging power supply, this method may be used to further enhance the inter-pulse voltage stability of modulators which employ the direct charging, after replacing the

  12. Investigations into the locomotor activity of white rats under the effect of 50 Hz high voltage fields

    Energy Technology Data Exchange (ETDEWEB)

    Hilmer, H.; Tembrock, G.

    1970-07-01

    Tests were carried out on white rats to determine the effect of high-voltage 50 Hz ac electric fields on their locomotor activity. Short-term tests showed that, when they were able to choose between a box not subjected to a field (or subjected to a light field) and one exposed to the field, they stayed for only 27% of the time in the "field box". In the long-term tests, when exposed to the field for three hours, the principal activity peak which occurred during the last hour of the test period was shifted by one hour. Exposure to the field resulted in a change in the ratio between activity during darkness and that during periods of light. It seems probable that this ratio, as well as the daily activity pattern, will be subject to certain afer-effects of an exposure to the field lasting several weeks. 13 refs., 2 figs.

  13. Universal Approach to Estimate Perfluorocarbons Emissions During Individual High-Voltage Anode Effect for Prebaked Cell Technologies

    Science.gov (United States)

    Dion, Lukas; Gaboury, Simon; Picard, Frédéric; Kiss, Laszlo I.; Poncsak, Sandor; Morais, Nadia

    2018-04-01

    Recent investigations on aluminum electrolysis cell demonstrated limitations to the commonly used tier-3 slope methodology to estimate perfluorocarbon (PFC) emissions from high-voltage anode effects (HVAEs). These limitations are greater for smelters with a reduced HVAE frequency. A novel approach is proposed to estimate the specific emissions using a tier 2 model resulting from individual HVAE instead of estimating monthly emissions for pot lines with the slope methodology. This approach considers the nonlinear behavior of PFC emissions as a function of the polarized anode effect duration but also integrates the change in behavior attributed to cell productivity. Validation was performed by comparing the new approach and the slope methodology with measurement campaigns from different smelters. The results demonstrate a good agreement between measured and estimated emissions as well as more accurately reflect individual HVAE dynamics occurring over time. Finally, the possible impact of this approach for the aluminum industry is discussed.

  14. Voltage regulating circuit

    NARCIS (Netherlands)

    2005-01-01

    A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

  15. Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

    Science.gov (United States)

    Chattopadhyay, P.

    1994-10-01

    The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

  16. Effects of Voltage on Microstructure and Corrosion Resistance of Micro-arc Oxidation Ceramic Coatings Formed on KBM10 Magnesium Alloy

    Science.gov (United States)

    Lu, J. P.; Cao, G. P.; Quan, G. F.; Wang, C.; Zhuang, J. J.; Song, R. G.

    2018-01-01

    Micro-arc oxidation (MAO) coatings on KBM10 magnesium alloy were prepared in an electrolyte system with sodium silicate, potassium hydroxide, sodium tungstate, and citric acid. The effects of voltage on the microstructure and corrosion resistance of MAO coatings were studied using stereoscopic microscopy, scanning electron microscopy, x-ray diffraction, scratch tests, potentiodynamic polarization, and electrochemical impedance spectroscopy. The results showed that the roughness of the MAO coatings, diameter, and number of pores increase with the increase in voltage. The coating formed at the voltage of 350 V exhibited the best adhesive strength when evaluated by the automatic scratch tester. The coatings were mainly composed of MgO, MgWO4, and Mg2SiO4, and the content of Mg2SiO4 increased with the increase in voltage. The corrosion resistance of MAO coatings could be improved by changing the applied voltage, and the best corrosion resistance of MAO coating was observed at the voltage of 350 V.

  17. The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

    Science.gov (United States)

    Szmyd, Janusz S.; Komatsu, Yosuke; Brus, Grzegorz; Ghigliazza, Francesco; Kimijima, Shinji; Ściążko, Anna

    2014-09-01

    This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V) correlation. The current-based fuel control (CBFC) was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

  18. The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

    Directory of Open Access Journals (Sweden)

    Szmyd Janusz S.

    2014-09-01

    Full Text Available This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V correlation. The current-based fuel control (CBFC was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

  19. Control and simulation of fault and change effect in a back to back system of high voltage direct current network

    International Nuclear Information System (INIS)

    Mohsen, Kalantar; Mehdi, Rashidi; Mehdi, Rashidi; Tabatabaei, Naser M.

    2005-01-01

    Full text : The primary knowledge of human being from electrical energy was in the form of statistic electricity and the first transmission line was DC. But because of primary problems in transmitting electrical power in DC form with average and low voltage levels and because of the higher efficiency of AC machines in comparison with DC machines and presence of AC transistors in different capacitance, have caused the electrical power to be transmitted in AC form. But with the avancement of electrical engineering technology in the 20th century, the transition systems were used in HVDC form, and from that time the HDVC technology passed its improvement process so fast. In this paper in addition to discussing the advantage of HDVC systems and back to back instruction, the fault and change effect in a back to back system is discussed

  20. Irreversible magnetic-field dependence of ferromagnetic resonance and inverse spin Hall effect voltage in CoFeB/Pt bilayer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sang-Il [Department of Materials Science and Engineering, Korea University, Seoul, 136-713 (Korea, Republic of); Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Seo, Min-Su [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Choi, Yeon Suk, E-mail: ychoi@kbsi.re.kr [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Park, Seung-Young, E-mail: parksy@kbsi.re.kr [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of)

    2017-01-01

    Magnetic field (H) sweeping direction dependences of the mixed voltage V{sub mix} induced by the inverse-spin Hall effect(ISHE) and spin-rectified effect (SRE) in a CoFeB (5 nm)/Pt (10 nm) bilayer structure are investigated using the ferromagnetic resonance in the TE mode cavities and coplanar waveguide methods. Conventionally, the magnitude of ISHE voltage V{sub ISH} (symmetric) excluding the SRE (antisymmetric component) was unavoidably separated from the fitting curve of V{sub mix} (a sum of a symmetric and an antisymmetric part) for one direction of H-source. By studying the ratio of the two voltage parts with the bi-directional H sweeping, the optimized V{sub ISH} (no SRE condition) value which also include a well-defined spin Hall angle can be obtained via the linear response relation of ISHE and SRE components. - Highlights: • Hysteretic behavior of ferromagnetic resonance spectra in the CoFeB/Pt sample. • Hysteretic behavior of inverse-spin Hall effect voltage in the CoFeB/Pt sample. • Proportion of inverse spin-Hall effect voltage can be determined by the cavity mode. • The hysteretic behavior arise from the unsaturated magnetization limit. • The well-defined spin Hall angle which consider a hysteresis can be obtained.

  1. Neuroprotective effect of interleukin-6 regulation of voltage-gated Na+ channels of cortical neurons is time- and dose-dependent

    Directory of Open Access Journals (Sweden)

    Wei Xia

    2015-01-01

    Full Text Available Interleukin-6 has been shown to be involved in nerve injury and nerve regeneration, but the effects of long-term administration of high concentrations of interleukin-6 on neurons in the central nervous system is poorly understood. This study investigated the effects of 24 hour exposure of interleukin-6 on cortical neurons at various concentrations (0.1, 1, 5 and 10 ng/mL and the effects of 10 ng/mL interleukin-6 exposure to cortical neurons for various durations (2, 4, 8, 24 and 48 hours by studying voltage-gated Na + channels using a patch-clamp technique. Voltage-clamp recording results demonstrated that interleukin-6 suppressed Na + currents through its receptor in a time- and dose-dependent manner, but did not alter voltage-dependent activation and inactivation. Current-clamp recording results were consistent with voltage-clamp recording results. Interleukin-6 reduced the action potential amplitude of cortical neurons, but did not change the action potential threshold. The regulation of voltage-gated Na + channels in rat cortical neurons by interleukin-6 is time- and dose-dependent.

  2. Voltage Controlled Dynamic Demand Response

    DEFF Research Database (Denmark)

    Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Future power system is expected to be characterized by increased penetration of intermittent sources. Random and rapid fluctuations in demands together with intermittency in generation impose new challenges for power balancing in the existing system. Conventional techniques of balancing by large...... central or dispersed generations might not be sufficient for future scenario. One of the effective methods to cope with this scenario is to enable demand response. This paper proposes a dynamic voltage regulation based demand response technique to be applied in low voltage (LV) distribution feeders....... An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...

  3. Quasiparticle conductance-voltage characteristics for break junctions involving d-wave superconductors: charge-density-wave effects.

    Science.gov (United States)

    Ekino, T; Gabovich, A M; Suan Li, Mai; Szymczak, H; Voitenko, A I

    2017-12-20

    Quasiparticle tunnel conductance-voltage characteristics (CVCs), [Formula: see text], were calculated for break junctions (BJs) made up of layered d-wave superconductors partially gapped by charge-density waves (CDWs). The current is assumed to flow in the ab-plane of electrodes. The influence of CDWs is analyzed by comparing the resulting CVCs with CVCs calculated for BJs made up of pure d-wave superconductors with relevant parameters. The main CDW-effects were found to be the appearance of new CVC peculiarities and the loss of CVC symmetry with respect to the V-sign. Tunnel directionality was shown to be one of the key factors in the formation of [Formula: see text] dependences. In particular, the orientation of electrodes with respect to the current channel becomes very important. As a result, [Formula: see text] can acquire a large variety of forms similar to those for tunnel junctions between superconductors with s-wave, d-wave, and mixed symmetry of their order parameters. The diversity of peculiarities is especially striking at finite temperatures. In the case of BJs made up of pure d-wave superconductors, the resulting CVC can include a two-peak gap-driven structure. The results were compared with the experimental BJ data for a number of high-T c oxides. It was shown that the large variety of the observed current-voltage characteristics can be interpreted in the framework of our approach. Thus, quasiparticle tunnel currents in the ab-plane can be used as an additional mean to detect CDWs competing with superconductivity in cuprates or other layered superconductors.

  4. The effects of voltage of x-ray tube on fractal dimension and anisotropy of diagnostic image

    International Nuclear Information System (INIS)

    Baik, Jee Seon; Lee, Sam Sun; Huh, Kyung Hoe; Yi, Won Jin; Heo, Min Suk; Choi, Soon Chul; Park, Kwan Soo

    2007-01-01

    The purpose of this study was to evaluate the effect of the kV on fractal dimension of trabecular bone in digital radiographs. 16 bone cores were obtained from patients who had taken partial resection of tibia due to accidents. Each bone core along with an aluminum step wedge was radiographed with an occlusal film at 0.08 sec and with the constant film-focus distance (32 cm). All radiographs were acquired at 60, 75, and 90 kV. A rectangular ROI was drawn at medial part, distal part, and the bone defect area of each bone core image according to each kV. The directional fractal dimension was measured using Fourier Transform spectrum, and the anisotropy was obtained using directional fractal dimension. The values were compared by the repeated measures ANOVA. The fractal dimensions increased along with kV increase (p<0.05). The anisotropy measurements did not show statistically significant difference according to kV change. The fractal dimensions of the bone defect areas of the bone cores have low values contrast to the non-defect areas of the bone cores. The anisotropy measurements of the bone defect areas were lower than those of the non-defect areas of the bone cores, but not statistically significant. Fractal analysis can notice a difference of a change of voltage of x-ray tube and bone defect or not. And anisotropy of a trabecular bone is coherent even with change of the voltage of x-ray tube or defecting off a part of bone

  5. Effective suppression of thermoelectric voltage in nonlocal spin-valve measurement

    Science.gov (United States)

    Ariki, Taisei; Nomura, Tatsuya; Ohnishi, Kohei; Kimura, Takashi

    2017-06-01

    We demonstrate that the background signal in the nonlocal spin-valve measurement can be sufficiently suppressed by optimizing the electrode design of the lateral spin valve. A relatively long length scale of heat propagation produces spin-independent thermoelectric signals under the combination of the Peltier and Seebeck effects. These unfavorable signals can be reduced by mixing the Peltier effects in two transparent ferromagnetic/nonmagnetic junctions. Proper understanding of the contribution from the heat current in no spin-current area is a key for effective reduction of the spin-independent background signal.

  6. Combined effect of CVR and penetration of DG in the voltage profile and losses of lowvoltage secondary distribution networks

    Science.gov (United States)

    Bokhari, Abdullah

    Demarcations between traditional distribution power systems and distributed generation (DG) architectures are increasingly evolving as higher DG penetration is introduced in the system. The concerns in existing electric power systems (EPSs) to accommodate less restrictive interconnection policies while maintaining reliability and performance of power delivery have been the major challenge for DG growth. In this dissertation, the work is aimed to study power quality, energy saving and losses in a low voltage distributed network under various DG penetration cases. Simulation platform suite that includes electric power system, distributed generation and ZIP load models is implemented to determine the impact of DGs on power system steady state performance and the voltage profile of the customers/loads in the network under the voltage reduction events. The investigation designed to test the DG impact on power system starting with one type of DG, then moves on multiple DG types distributed in a random case and realistic/balanced case. The functionality of the proposed DG interconnection is designed to meet the basic requirements imposed by the various interconnection standards, most notably IEEE 1547, public service commission, and local utility regulation. It is found that implementation of DGs on the low voltage secondary network would improve customer's voltage profile, system losses and significantly provide energy savings and economics for utilities. In a network populated with DGs, utility would have a uniform voltage profile at the customers end as the voltage profile becomes more concentrated around targeted voltage level. The study further reinforced the concept that the behavior of DG in distributed network would improve voltage regulation as certain percentage reduction on utility side would ensure uniform percentage reduction seen by all customers and reduce number of voltage violations.

  7. Analysis of the effect of interface state charges on threshold voltage and transconductance of 6H-SiC N-channel MOSFET

    International Nuclear Information System (INIS)

    Tang Xiaoyan; Zhang Yimen; Zhang Yuming

    2002-01-01

    The effect of interface state charges on the threshold voltage and transconductance of 6H-SiC N-channel metal-oxide semiconductor field-effect transistor (MOSFET) is analyzed based on the non-uniformly distributed interface state density in the band gap and incomplete impurity ionization in silicon carbide. The results show that the nonuniform distribution of interface state density cause not only the increment of the threshold voltage but also the degradation of the transconductance of MOSFET so that it is one of the important factors to influence the characteristics of SiC MOSFET

  8. A comparative study of the effect of ciguatoxins on voltage-dependent Na+ and K+ channels in cerebellar neurons.

    Science.gov (United States)

    Pérez, Sheila; Vale, Carmen; Alonso, Eva; Alfonso, Carmen; Rodríguez, Paula; Otero, Paz; Alfonso, Amparo; Vale, Paulo; Hirama, Masahiro; Vieytes, Mercedes R; Botana, Luis M

    2011-04-18

    Ciguatera is a global disease caused by the consumption of certain warm-water fish (ciguateric fish) that have accumulated orally effective levels of sodium channel activator toxins (ciguatoxins) through the marine food chain. The effect of ciguatoxin standards and contaminated ciguatoxin samples was evaluated by electrophysiological recordings in cultured cerebellar neurons. The toxins affected both voltage-gated sodium (Nav) and potassium channels (Kv) although with different potencies. CTX 3C was the most active toxin blocking the peak inward sodium currents, followed by P-CTX 1B and 51-OH CTX 3C. In contrast, P-CTX 1B was more effective in blocking potassium currents. The analysis of six different samples of contaminated fish, in which a ciguatoxin analogue of mass 1040.6, not identical with the standard 51-OH CTX 3C, was the most prevalent compound, indicated an additive effect of the different ciguatoxins present in the samples. The results presented here constitute the first comparison of the potencies of three different purified ciguatoxins on sodium and potassium channels in the same neuronal preparation and indicate that electrophysiological recordings from cultured cerebellar neurons may provide a valuable tool to detect and quantify ciguatoxins in the very low nanomolar range.

  9. Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO3/NdGaO3 heterostructures

    Directory of Open Access Journals (Sweden)

    Yongqi Dong

    2017-05-01

    Full Text Available The effect of gate voltage polarity on the behavior of NdNiO3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (∼3% and pronounced lattice expansion (0.17% in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is provided for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors.

  10. Effect of Electric Voltage and Current of X-ray Chamber on the Element inthe Zirconium Alloy Analysis X-ray by X-ray Fluorescence

    International Nuclear Information System (INIS)

    Yusuf-Nampira; Narko-Wibowo, L; Rosika-Krisnawati; Nudia-Barenzani

    2000-01-01

    The using of x-ray fluorescence in the chemical analysis depend heavilyon the parameters of x-ray chamber, for examples : electric voltage andelectric current. That parameter give effect in the result of determine ofSn, Cr, Fe and Ni in the zirconium alloy. 20 kV electric voltages are used onthe Mo x-ray chamber shall product x-ray of zirconium in the sample materialcan give effect in the stability of the analysis result (deviation more than5%). The result of analysis of elements in the zirconium alloy shall givedeviation less than 5% when using of electric voltage of the x-ray chamberless than 19 kV. The sensitivity of analysis can be reached by step upelectric current of x-ray chamber. (author)

  11. Effects of magnetic fields during high voltage live-line maintenance

    Science.gov (United States)

    Göcsei, Gábor; Kiss, István, Dr; Németh, Bálint

    2015-10-01

    In case of transmission and distribution networks, extra low frequency (typically 50 or 60 Hz) electric and magnetic fields have to be taken into consideration separately from each other. Health effects have been documented from exposures to both types of fields. Magnetic fields are qualified as possibly carcinogenic to humans (category “2B”) by WHO's cancer research institute, International Agency for Research on Cancer (IARC), so it is essential to protect the workers against their harmful effects. During live-line maintenance (LLM) electric fields can be shielded effectively by different kinds of conductive clothing, which are enclosed metal surfaces acting as a Faraday-cage. In practice laboratory measurements also prove their efficiency, the required shielding ratio is above 99% by the related standard.. A set of measurements have proved that regular conductive clothing used against the electric fields cannot shield the magnetic fields effectively at all. This paper introduces the possible risks of LLM from the aspect of the health effects of magnetic fields. Although in this case the principle of shielding the electric fields cannot be applied, new considerations in equipment design and technology can be used as a possible solution. Calculations and simulations based on the data of the Hungarian transmission network - which represents the European grid as a part of ENTSO-E - and high-current laboratory measurement results also prove the importance of the topic.

  12. Effects of magnetic fields during high voltage live-line maintenance

    International Nuclear Information System (INIS)

    Göcsei, Gábor; Kiss, Dr István; Németh, Bálint

    2015-01-01

    In case of transmission and distribution networks, extra low frequency (typically 50 or 60 Hz) electric and magnetic fields have to be taken into consideration separately from each other. Health effects have been documented from exposures to both types of fields. Magnetic fields are qualified as possibly carcinogenic to humans (category “2B”) by WHO's cancer research institute, International Agency for Research on Cancer (IARC), so it is essential to protect the workers against their harmful effects. During live-line maintenance (LLM) electric fields can be shielded effectively by different kinds of conductive clothing, which are enclosed metal surfaces acting as a Faraday-cage. In practice laboratory measurements also prove their efficiency, the required shielding ratio is above 99% by the related standard.. A set of measurements have proved that regular conductive clothing used against the electric fields cannot shield the magnetic fields effectively at all. This paper introduces the possible risks of LLM from the aspect of the health effects of magnetic fields. Although in this case the principle of shielding the electric fields cannot be applied, new considerations in equipment design and technology can be used as a possible solution. Calculations and simulations based on the data of the Hungarian transmission network - which represents the European grid as a part of ENTSO-E - and high-current laboratory measurement results also prove the importance of the topic. (paper)

  13. Effects of Amiodarone and N-Desethylamiodarone on Cardiac Voltage-gated Sodium Channels

    Directory of Open Access Journals (Sweden)

    Mohammad-Reza eGhovanloo

    2016-03-01

    Full Text Available Amiodarone (AMD is a potent antiarrhythmic drug with high efficacy for treating atrial fibrillation and tachycardia. The pharmacologic profile of AMD is complex. AMD possesses biophysical characteristics of all of class I, II, III, and IV agents. Despite its adverse side effects, AMD remains the most commonly prescribed antiarrhythmic drug. AMD was described to prolong the QT interval and can lead to torsades de pointes. Our goal was to study the effects of AMD on peak and late sodium currents (INa,P and INa,L and determine whether these effects change as AMD is metabolized into N-Desethylamiodarone (DES. We hypothesized that AMD and DES block both INa,P and INa,L with similar profiles due to structural similarities. Given the inherent small amounts of INa,L in NaV1.5, we screened AMD and DES against the Long QT-3-causing mutation, ∆KPQ, to better detect any drug-mediated effect on INa,L. Our results show that AMD and DES do not affect WT or ∆KPQ activation; however, both drugs altered the apparent valence of steady-state fast-inactivation. In addition, AMD and DES preferentially block ∆KPQ peak conductance compared to WT. Both compounds significantly increase INa,L and window currents. We conclude that both compounds have pro-arrhythmic effects on NaV1.5, especially ∆KPQ; however, DES seems to have a greater pro-arrhythmic effect than AMD.

  14. High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

    NARCIS (Netherlands)

    Houin, G.J.R.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

    2016-01-01

    The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance

  15. Reverse bistable effect in ferroelectric liquid crystal devices with ultra-fast switching at low driving voltage.

    Science.gov (United States)

    Guo, Qi; Zhao, Xiaojin; Zhao, Huijie; Chigrinov, V G

    2015-05-15

    In this Letter, reverse bistable effect with deep-sub-millisecond switching time is first reported in ferroelectric liquid crystal (FLC) devices using a homogeneous photo-alignment technique. It is indicated by our experimental results that both the anchoring energy and the dielectric property of the FLC's alignment layer is critical for the existence of the reverse bistable effect. In addition, with the derived criteria of the reverse bistable effect, we quantitatively analyze the switching dynamics of the reverse bistable FLC and the transition condition between the traditional bistability and our presented reverse bistability. Moreover, the fabricated FLC device exhibits an ultra-fast switching of ∼160  μs and a high contrast ratio of 1000:1, both of which were measured at a low driving voltage of 11 V. The featured deep-sub-millisecond switching time is really advantageous for our presented reverse bistable FLC devices, which enables a significant quality improvement of the existing optical devices, as well as a wide range of new applications in photonics and display areas.

  16. Evaluation of the Effects of Nationwide Conservation Voltage Reduction on Peak-Load Shaving Using SOMAS Data

    Directory of Open Access Journals (Sweden)

    Soon-Ryul Nam

    2013-12-01

    Full Text Available In this paper we propose a new method to evaluate the effects of nationwide conservation voltage reduction (CVR on peak-load shaving, using substation operating results management system (SOMAS data. Its evaluation is based on a national CVR factor, which is defined as the weighted average of CVR factors associated with all transformer banks and weighting coefficients are determined by the reconstructed loads corresponding to each transformer bank. To make use of the data resulting from nationwide CVR without installing additional measuring devices, we adopt a linearized static-load model with a linearizing parameter. SOMAS data are used to evaluate the effects of nationwide CVR on peak-load shaving in the Korean power system. Evaluation results show that the national CVR factor of the Korean power system has small values in the summer season and large values in the winter season. This means that the effect of nationwide CVR on peak-load shaving in the Korean power system presents stronger benefits during winter months.

  17. Low-voltage self-assembled monolayer field-effect transistors on flexible substrates.

    Science.gov (United States)

    Schmaltz, Thomas; Amin, Atefeh Y; Khassanov, Artoem; Meyer-Friedrichsen, Timo; Steinrück, Hans-Georg; Magerl, Andreas; Segura, Juan José; Voitchovsky, Kislon; Stellacci, Francesco; Halik, Marcus

    2013-08-27

    Self-assembled monolayer field-effect transistors (SAMFETs) of BTBT functionalized phosphonic acids are fabricated. The molecular design enables device operation with charge carrier mobilities up to 10(-2) cm(2) V(-1) s(-1) and for the first time SAMFETs which operate on rough, flexible PEN substrates even under mechanical substrate bending. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. High voltage electric field effects on structure and biological characteristics of barley seeds

    Energy Technology Data Exchange (ETDEWEB)

    Khazaei, J. [Tehran Univ., Tehran (Iran, Islamic Republic of). Dept. of Agrotechnology, Univ. College of Abouraihan; Aliabadi, E. [Tehran Univ., Tehran (Iran, Islamic Republic of). Dept. of Crop Production Horticulture, Univ. College of Aburaihan; Shayegani, A.A. [Tehran Univ., Tehran (Iran, Islamic Republic of). Univ. College of Engineering

    2010-07-01

    Electric biostimulation of seeds is a pre-sowing treatment in which an electric field is applied to seeds to increase germination of non standard seeds. This paper reported on a study that examined the effects of AC electric field and exposure time on the structure and biological characteristics of barley seeds. The objective was to determine the potential to accelerate seed germination, plant growth and root development by the electric field strength and exposure time. Makooei cultivar barley seeds were used in this study. The effect of electric field strength (at 2, 4, 9, and 14 kV/m) and exposure time (at 15, 45, 80, and 150 min) on seed germination was studied along with height of seedling, length or root, height of stem, length of leaves, earliness, dry weight and wet weight of seedling. The treated seeds were stored for a month in a refrigerator at 5 degrees C prior to the germination experiments. The initial germination percent of the seed was 81 per cent. The treatment of barley seeds in an AC electric field had a positive effect on all investigated parameters. The germination percent of the treated seed increased to 94.5 per cent . The seeds exposed for long periods of time (45 to 150 min) showed better germination than the seeds exposed to lower exposure times. Dry and wet weights of seedling increased 143.4 per cent and 45.7 per cent, respectively.

  19. Symmetric voltage-controlled variable resistance

    Science.gov (United States)

    Vanelli, J. C.

    1978-01-01

    Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

  20. Effect of gold nano-particles on switch-on voltage and relaxation frequency of nematic liquid crystal cell

    Directory of Open Access Journals (Sweden)

    M. Inam

    2011-12-01

    Full Text Available We report the observation of large changes in the electro-optical properties of nematic liquid crystal (NLC due to inclusion of small concentration of 10 nm diameter gold nanoparticles (GNPs. It is observed that GNPs lower switch-on voltage and also lower the relaxation frequency with applied voltage (AC field to NLC cell. These studies of GNP doped NLC cell have been done using optical interferometry and capacity measurement by impedance analyzer. The change in threshold voltage and relaxation frequency by doping GNPs in NLC is explained theoretically.

  1. Effect of applied voltage on surface properties of anodised titanium in mixture of β-glycerophosphate (β-GP) and calcium acetate (CA)

    Energy Technology Data Exchange (ETDEWEB)

    Chuan, Lee Te, E-mail: gd130079@siswa.uthm.edu.my; Rathi, Muhammad Fareez Mohamad, E-mail: cd110238@siswa.uthm.edu.my; Abidin, Muhamad Yusuf Zainal, E-mail: cd110221@siswa.uthm.edu.my; Abdullah, Hasan Zuhudi, E-mail: hasan@uthm.edu.my; Idris, Maizlinda Izwana, E-mail: izwana@uthm.edu.my [Faculty of Mechanical and Manufacturing Engineering, Universiti Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2015-07-22

    Anodic oxidation is a surface modification method which combines electric field driven metal and oxygen ion diffusion for formation of oxide layer on the anode surface. This method has been widely used to modify the surface morphology of biomaterial especially titanium. This study aimed to investigate the effect of applied voltage on titanium. Specifically, the titanium foil was anodised in mixture of β-glycerophosphate disodium salt pentahydrate (β-GP) and calcium acetate monohydrate (CA) with different applied voltage (50-350 V), electrolyte concentration (0.04 M β-GP + 0.4 M CA), anodising time (10minutes) and current density (50 and 70 mA.cm{sup −2}) at room temperature. Surface oxide properties of anodised titanium were characterised by digital single-lens reflex camera (DSLR camera), field emission scanning electron microscope (FESEM) and atomic force microscopy (AFM). At lower applied voltage (≤150 V), surface of titanium foils were relatively smooth. With increasing applied voltage (≥250 V), the oxide layer became more porous and donut-shaped pores were formed on the surface of titanium foils. The AFM results indicated that the surface roughness of anodised titanium increases with increasing of applied voltage. The porous and rough surface is able to promote the osseointegration and reduce the suffering time of patient.

  2. Numerical Study on Open-Circuit Voltage of Single Layer Organic Solar Cells with Schottky Contacts: Effects of Molecular Energy Levels, Temperature and Thickness

    International Nuclear Information System (INIS)

    Rong-Hua, Li; Ying-Quan, Peng; Chao-Zhu, Ma; Run-Sheng, Wang; Hong-Wei, Xie; Ying, Wang; Wei-Min, Meng

    2010-01-01

    We numerically investigate the effects of the exciton generation rate G, temperature T, the active layer thickness d and the position of LUMO level E L related to the cathode work function W c at a given energy gap on the open-circuit voltage V oc of single layer organic solar cells with Schottky contact. It is demonstrated that open-circuit voltage increases concomitantly with the decreasing cathode work function W c for given anode work functions and exciton generation rates. In the case of given cathode and anode work functions, the open-circuit voltage first increases with the exciton generation rate and then reaches a saturation value, which equals to the built-in voltage. Additionally, it is worth noting that a significant improvement to V oc could be made by selecting an organic material which has a relative high LUMO level (low |E L | value). However, V oc decreases as the temperature increases, and the decreasing rate reduces with the enhancement of exciton generation rate. Our study also shows that it is of no benefit to improve the open-circuit voltage by increasing the device thickness because of an enhanced charge recombination in thicker devices. (cross-disciplinary physics and related areas of science and technology)

  3. Evaluation results on the effectiveness of the corrosion protection system for underground pipelines, using the DC-voltage gradient technique

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, Antonio Carlos [Petroquimica Uniao S.A., Santo Andre, SP (Brazil)

    2003-07-01

    A pipeline of diameter 6'' with 17.694 km of extension was evaluated how much to the integrity of its external covering and the effectiveness of the system of cathodic protection, using the method DC-Voltage Gradient. The Cathodic Protection in this pipeline is made by seven rectifiers. The gotten data indicate that the potential pipe-ground registered in some check points to the long one of the pipeline is extremely negative, what has led to a super protection of the pipeline for the CP. This if explains for the great proximity between the anodes and the pipeline. For km had been identified 917 failures with a mean density of 50,1 per Km. Beyond the analysis of the data, this work includes conclusions and recommendations detailed for the repairs of the covering of the pipeline and for improvement of the effectiveness of the CP. One sends regards to a combination of repairs in the covering and reevaluation of the CP, in way to improve the protection level and to assure the reduction of the risk of external corrosion. (author)

  4. Evaluation results on the effectiveness of the corrosion protection system for underground pipelines, using the DC-voltage gradient technique

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, Antonio Carlos [Petroquimica Uniao S.A., Santo Andre, SP (Brazil)

    2003-07-01

    A pipeline of diameter 6'' with 17.694 km of extension was evaluated how much to the integrity of its external covering and the effectiveness of the system of cathodic protection, using the method DC-Voltage Gradient. The Cathodic Protection in this pipeline is made by seven rectifiers. The gotten data indicate that the potential pipe-ground registered in some check points to the long one of the pipeline is extremely negative, what has led to a super protection of the pipeline for the CP. This if explains for the great proximity between the anodes and the pipeline. For km had been identified 917 failures with a mean density of 50,1 per Km. Beyond the analysis of the data, this work includes conclusions and recommendations detailed for the repairs of the covering of the pipeline and for improvement of the effectiveness of the CP. One sends regards to a combination of repairs in the covering and reevaluation of the CP, in way to improve the protection level and to assure the reduction of the risk of external corrosion. (author)

  5. Effects of high voltage electrical stimulation on the rate of pH decline, meat quality and color stability in chilled beef carcasses

    OpenAIRE

    Mombeni, Ehsan Gharib; Mombeini, Manoochehr Gharib; Figueiredo, Lucas Chaves; Siqueira, Luciano Soares Jacintho; Dias, Debora Testoni

    2013-01-01

    Objective: To determine the effects of high voltage electrical stimulation (HVES, 800 Voltage) on rapid decreases in pH values and improvements in meat quality. Methods: A total of 50 beef carcasses were applied, divided into two groups, one as a control and another for HVES. Meat quality was evaluated based on M. longissimus dorsi by examining pH and temperature levels at 1, 2, 5, 10 and 24 h, while color stability was examined seven days after slaughter. Results: HVES decreased the pH...

  6. An Efficient and Robust Hybrid Damper for LCL- or LLCL-Based Grid-Tied Inverter With Strong Grid-Side Harmonic Voltage Effect Rejection

    DEFF Research Database (Denmark)

    Liu, Yuan; Wu, Weimin; He, Yuanbin

    2016-01-01

    to resist the effect of the BHV, a feedforward voltage compensator and a proportional resonant regulator with harmonic compensation are often adopted. However, they still have their own limitations, particularly when there are higher order BHVs at the point of common coupling and when the equivalent grid......A high-order (LCL or LLCL) power filter with a small grid-side inductor is becoming more preferred for a grid-tied inverter due to less total inductance and reduced costs. In a microgrid, the background harmonic voltage (BHV) may distort the injected currents of the grid-tied inverters. In order...

  7. Electron emission of cathode holder of vacuum diode of an intense electron-beam accelerator and its effect on the output voltage

    OpenAIRE

    Xin-Bing Cheng; Jin-Liang Liu; Hong-Bo Zhang; Zhi-Qiang Hong; Bao-Liang Qian

    2011-01-01

    The vacuum diode which is used to generate relativistic electron beams is one of the most important parts of a pulsed-power modulator. In this paper, the electron emission of cathode holder of a vacuum diode and its effect on the output voltage is investigated by experiments on an intense electron-beam accelerator with 180 ns full width at half maximum and 200–500 kV output voltage. First, the field emission is analyzed and the electric field of the vacuum chamber is calculated. Then, the fla...

  8. Parametric effect of a spatially periodic voltage depression on operation of Cerenkov sources of electromagnetic radiation

    International Nuclear Information System (INIS)

    Nusinovich, G.S.; Vlasov, A.N.

    1994-01-01

    In microwave sources of coherent Cerenkov radiation the electrons usually propagate near the rippled wall of a slow-wave structure. These ripples cause the periodic modulation of electron potential depression, and therefore, lead to periodic modulation of electron axial velocities. Since the period of this electrostatic pumping is the period of the slow-wave structure the parametric coupling of electrons to originally nonsynchronous spatial harmonics of the microwave field may occur. This effect can be especially important for backward-wave oscillators (BWO's) driven by high current, relativistic electron beams. In the paper both linear and nonlinear theories of the relativistic resonant BWO with periodic modulation of electron axial velocities are developed and results illustrating the evolution of the linear gain function and the efficiency of operation in the large-signal regime are presented

  9. Effects of constant voltage and constant current stress in PCBM:P3HT solar cells

    DEFF Research Database (Denmark)

    Cester, Andrea; Rizzo, Aldo; Bazzega, A.

    2015-01-01

    The aimof this work is the investigation of forward and reverse bias stress effects, cell self-heating and annealing in roll coated organic solar cells with PCBM:P3HT active layer. In reverse bias stress cells show a constant degradation over time. In forward current stress cells alternate...... mechanisms: the decrease of the net generation rate (due to formation of exciton quenching centres or the reduction of exciton separation rate); the formation of small leaky paths between anode and cathode, which reduces the total current extracted from the cell. The stress-induced damage can be recovered...... degradation and annealing phases, which are explained through the high power dissipation during the current stress, and the consequent self-heating. The high temperature is able to recover the cell performances at least until a critical temperature is reached. The degradation can be explained by the following...

  10. SU-F-T-478: Effect of Deconvolution in Analysis of Mega Voltage Photon Beam Profiles

    Energy Technology Data Exchange (ETDEWEB)

    Muthukumaran, M [Apollo Speciality Hospitals, Chennai, Tamil Nadu (India); Manigandan, D [Fortis Cancer Institute, Mohali, Punjab (India); Murali, V; Chitra, S; Ganapathy, K [Apollo Speciality Hospital, Chennai, Tamil Nadu (India); Vikraman, S [JAYPEE HOSPITAL- RADIATION ONCOLOGY, Noida, UTTAR PRADESH (India)

    2016-06-15

    Purpose: To study and compare the penumbra of 6 MV and 15 MV photon beam profiles after deconvoluting different volume ionization chambers. Methods: 0.125cc Semi-Flex chamber, Markus Chamber and PTW Farmer chamber were used to measure the in-plane and cross-plane profiles at 5 cm depth for 6 MV and 15 MV photons. The profiles were measured for various field sizes starting from 2×2 cm till 30×30 cm. PTW TBA scan software was used for the measurements and the “deconvolution” functionality in the software was used to remove the volume averaging effect due to finite volume of the chamber along lateral and longitudinal directions for all the ionization chambers. The predicted true profile was compared and the change in penumbra before and after deconvolution was studied. Results: After deconvoluting the penumbra decreased by 1 mm for field sizes ranging from 2 × 2 cm till 20 x20 cm. This is observed for along both lateral and longitudinal directions. However for field sizes from 20 × 20 till 30 ×30 cm the difference in penumbra was around 1.2 till 1.8 mm. This was observed for both 6 MV and 15 MV photon beams. The penumbra was always lesser in the deconvoluted profiles for all the ionization chambers involved in the study. The variation in difference in penumbral values were in the order of 0.1 till 0.3 mm between the deconvoluted profile along lateral and longitudinal directions for all the chambers under study. Deconvolution of the profiles along longitudinal direction for Farmer chamber was not good and is not comparable with other deconvoluted profiles. Conclusion: The results of the deconvoluted profiles for 0.125cc and Markus chamber was comparable and the deconvolution functionality can be used to overcome the volume averaging effect.

  11. Effect of voltage-gated sodium channels blockers on motility and viability of human sperm in vitro

    Directory of Open Access Journals (Sweden)

    Hammad Ahmad Gakhar

    2018-01-01

    Full Text Available Objective: To test the effect of voltage-gated sodium channels (VGSCs blockers on the motility and viability of human sperm in-vitro and to evaluate the tested compounds as potential contact spermicidal.Methods: Sperm samples were obtained from healthy nonsmoking volunteers of age 25-30 years who had not taken any drug 3 months before and during the course of the study. The effect of VGSCs blockers evaluated from two pharmacological classes including antiarrhythmic (amiodarone, procainamide and disopyramide and antiepileptic (carbamazepine, oxcarbazepine, phenytoin, and lamotrigine drugs. They were tested on the in-vitro motility and viability of human sperm using Computer Assisted Semen Analyzer.Results: All tested drugs except oxcarbazepine showed dose dependent inhibition of total motility with significant reduction (P<0.05 at the maximum concentration of 200 μΜ when compared with the control. The concentrations of drugs that reduced total sperm motility to 50% of control (half maximal inhibitory concentration were 2.76, 14.16 and 20.29 μΜ for phenytoin, lamotrigine and carbamazepine, respectively; and 2.53, 5.32 and 0.37 μΜ for amiodarone, procainamide and disopyramide, respectively. The anti-motility effects were reversible to various degrees. There was statistically insignificant difference in the inhibition of sperm viability among amiodarone, procainamide and disopyramide. Phenytoin demonstrated the most potent spermicidal action.Conclusions: VGSCs blockers have significant adverse effects on in-vitro motility of human spermatozoa. So in-vivo studies are required to determine their potential toxicological effects on human semen quality, which is an important factor regarding fertility. Moreover, these drugs have the potential to be developed into contact spermicidal.

  12. Space Life Sciences Directorate's Position on the Physiological Effects of Exposing the Crewmemeber to Low-Voltage Electrical Hazards During Extravehicular Activity

    Science.gov (United States)

    Hamilton, Douglas; Kramer, Leonard; Mikatarian, Ron; Polk, James; Duncan, Michael; Koontz, Steven

    2010-01-01

    The models predict that, for low voltage exposures in the space suit, physiologically active current could be conducted across the crew member causing catastrophic hazards. Future work with Naval Health Research Center Detachment Directed Energy Bio-effects Laboratory is being proposed to analyze additional current paths across the human torso and upper limbs. These models may need to be verified with human studies.

  13. EFFECTS OF PYRETHROIDS ON VOLTAGE-SENSITIVE CALCIUM CHANNELS: A CRITICAL EVALUATION OF STRENGTHS, WEAKNESSES, DATA NEEDS, AND RELATIONSHIP TO ASSESSMENT OF CUMULATIVE NEUROTOXICITY.

    Science.gov (United States)

    A recently published review (Soderlund et al., 2002, Toxicology 171, 3-59.) of the mechanisms of acute neurotoxicity of pyrethroid compounds postulated that voltage-sensitive calcium channels (VSCC) may be a target of some pyrethroid compounds and that effects on VSCC may contrib...

  14. Study of protection devices against the effects of electric discharges inside a very high voltage generator: the Vivitron accelerator

    International Nuclear Information System (INIS)

    Nolot, E.

    1996-01-01

    The Vivitron tandem is a large electrostatic accelerator comprising a Van de Graaff generator designed to reach terminal voltages of around 30 MV. The machine is limited at rather lower nominal voltages (about 20 MV) due to the sensitivity of the insulating column structure to transient overvoltages. These are induced by electrical discharges in compressed SF 6 . This thesis first aims at analysing the fundamental reasons of electrical discharges in order to limit the probability of their occurrence. Then we simulate the transient overvoltages induced and present some improvements which may lead to a stable behaviour of the Vivitron at nominal voltages higher than 20 MV. Initially we deduce discharge onset voltages and actual breakdown field limitations in the different gap geometries from analysis of possible breakdown mechanisms in compressed SF 6 . In a second part, some electrical characteristics of the insulating column structure are measured at high voltage. Fast rising oscillating waves induced by sparking in the Vivitron, along with the associated energies,are determined in the third part. The last part deals with new surge protections of the insulating column structure. Spark gaps with precise onset voltage and optimized shielding electrodes are discussed. ZnO-based varistors designed for operation at very high fields have also been developed in order to reduce transient overvoltage values. (author)

  15. [Changes of platelet rheological behavior and the interventional effects of ulinastatin in rats with high-voltage electrical burns].

    Science.gov (United States)

    Zhang, Q F; Li, Y; Feng, J K; Xu, Y F; Tu, L L

    2017-12-20

    Objective: To explore the influence of high-voltage electrical burns on the number of platelet aggregation, β-thromboglobulin (β-TG) and platelet factor 4 (PF-4) and the interventional effects of ulinastatin in rats with high-voltage electrical burns. Methods: A total of 240 Sprague-Dawley rats were divided into sham injury (SI) group, simple electrical burn (SEB) group, normal saline (NS) group, and ulinastatin (UTI) group according to the random number table, with 60 rats in each group. The electrical current was applied to the outside proximal part of left forelimb of rats and exited from the outside proximal part of right hind limb of rats. Rats in groups SEB, NS, and UTI were inflicted with high-voltage electrical burn wounds of 1 cm×1 cm at current entrances and exits, with the voltage regulator and experimental transformer. Rats in group SI were sham injured through connecting the same equipments without electricity. At 2 min post injury, rats in group NS were intraperitoneally injected with 2 mL/kg NS, and rats in group UTI were intraperitoneally injected with 2×10(4) U/kg UTI of 10 g/L. At 15 min before injury and 5 min, 1 h, 2 h, 4 h, 8 h post injury, 10 rats in each group were selected to collect 5-7 mL blood of heart respectively. Blood of 0.05 mL were collected to make fresh blood smear for observing the number of platelet aggregation, and serum were separated from the remaining blood to determine content of β-TG and PF-4 with enzyme-linked immunosorbent assay. Data were processed with analysis of factorial design of variance, student-Newman-Keuls test, Kruskal-Wallis H test, Wilcoxon rank sum test, and Bonferroni correction. Results: (1) At 15 min before injury, the numbers of platelet aggregation of rats were close among groups SI, SEB, NS and UTI (5.9±1.2, 5.8±1.2, 5.9±1.3, 5.9±1.1, respectively, with P values above 0.05). At 5 min, 1 h, 2 h, 4 h, 8 h post injury, the numbers of platelet aggregation of rats in group SEB were 57.2±16.3, 59

  16. Reliability criteria for voltage stability

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Carson W; Silverstein, Brian L [Bonneville Power Administration, Portland, OR (United States)

    1994-12-31

    In face of costs pressures, there is need to allocate scare resources more effectively in order to achieve voltage stability. This naturally leads to development of probabilistic criteria and notions of rick management. In this paper it is presented a discussion about criteria for long term voltage stability limited to the case in which the time frames are topically several minutes. (author) 14 refs., 1 fig.

  17. Effects of synchronous irradiance monitoring and correction of current-voltage curves on the outdoor performance measurements of photovoltaic modules

    Science.gov (United States)

    Hishikawa, Yoshihiro; Doi, Takuya; Higa, Michiya; Ohshima, Hironori; Takenouchi, Takakazu; Yamagoe, Kengo

    2017-08-01

    Precise outdoor measurement of the current-voltage (I-V) curves of photovoltaic (PV) modules is desired for many applications such as low-cost onsite performance measurement, monitoring, and diagnosis. Conventional outdoor measurement technologies have a problem in that their precision is low when the solar irradiance is unstable, hence, limiting the opportunity of precise measurement only on clear sunny days. The purpose of this study is to investigate an outdoor measurement procedure, that can improve both the measurement opportunity and precision. Fast I-V curve measurements within 0.2 s and synchronous measurement of irradiance using a PV module irradiance sensor very effectively improved the precision. A small standard deviation (σ) of the module’s maximum output power (P max) in the range of 0.7-0.9% is demonstrated, based on the basis of a 6 month experiment, that mainly includes partly sunny days and cloudy days, during which the solar irradiance is unstable. The σ was further improved to 0.3-0.5% by correcting the curves for the small variation of irradiance. This indicates that the procedure of this study enables much more reproducible I-V curve measurements than a conventional usual procedure under various climatic conditions. Factors that affect measurement results are discussed, to further improve the precision.

  18. Simulator of Non-homogenous Alumina and Current Distribution in an Aluminum Electrolysis Cell to Predict Low-Voltage Anode Effects

    Science.gov (United States)

    Dion, Lukas; Kiss, László I.; Poncsák, Sándor; Lagacé, Charles-Luc

    2018-04-01

    Perfluorocarbons are important contributors to aluminum production greenhouse gas inventories. Tetrafluoromethane and hexafluoroethane are produced in the electrolysis process when a harmful event called anode effect occurs in the cell. This incident is strongly related to the lack of alumina and the current distribution in the cell and can be classified into two categories: high-voltage and low-voltage anode effects. The latter is hard to detect during the normal electrolysis process and, therefore, new tools are necessary to predict this event and minimize its occurrence. This paper discusses a new approach to model the alumina distribution behavior in an electrolysis cell by dividing the electrolytic bath into non-homogenous concentration zones using discrete elements. The different mechanisms related to the alumina distribution are discussed in detail. Moreover, with a detailed electrical model, it is possible to calculate the current distribution among the different anodic assemblies. With this information, the model can evaluate if low-voltage emissions are likely to be present under the simulated conditions. Using the simulator will help the understanding of the role of the alumina distribution which, in turn, will improve the cell energy consumption and stability while reducing the occurrence of high- and low-voltage anode effects.

  19. High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

    Science.gov (United States)

    Bae, Jinho; Kim, Hyoung Woo; Kang, In Ho; Yang, Gwangseok; Kim, Jihyun

    2018-03-01

    We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional β-Ga2O3 field-plated with hexagonal boron nitride (h-BN). Both the β-Ga2O3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO2/Si substrate for integration into a high breakdown voltage quasi-two-dimensional β-Ga2O3 MESFETs. N-type conducting behavior was observed in the fabricated β-Ga2O3 MESFETs, along with a high on/off current ratio (>106) and excellent current saturation. A three-terminal off-state breakdown voltage of 344 V was obtained, with a threshold voltage of -7.3 V and a subthreshold swing of 84.6 mV/dec. The distribution of electric fields in the quasi-two-dimensional β-Ga2O3 MESFETs was simulated to analyze the role of the dielectric h-BN field plate in improving the off-state breakdown voltage. The stability of the field-plated β-Ga2O3 MESFET in air was confirmed after storing the MESFET in ambient air for one month. Our results pave the way for unlocking the full potential of β-Ga2O3 for use in a high-power nano-device with an ultrahigh breakdown voltage.

  20. High voltage systems

    International Nuclear Information System (INIS)

    Martin, M.

    1991-01-01

    Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

  1. Effect of the change in the load resistance on the high voltage pulse transformer of the intense electron-beam accelerators.

    Science.gov (United States)

    Cheng, Xin-bing; Liu, Jin-liang; Qian, Bao-liang; Zhang, Yu; Zhang, Hong-bo

    2009-11-01

    A high voltage pulse transformer (HVPT) is usually used as a charging device for the pulse forming line (PFL) of intense electron-beam accelerators (IEBAs). Insulation of the HVPT is one of the important factors that restrict the development of the HVPT. Until now, considerable effort has been focused on minimizing high field regions to avoid insulation breakdown between windings. Characteristics of the HVPT have been widely discussed to achieve these goals, but the effects of the PFL and load resistance on HVPT are usually neglected. In this paper, a HVPT is used as a charging device for the PFL of an IEBA and the effect of the change in the load resistance on the HVPT of the IEBA is presented. When the load resistance does not match the wave impedance of the PFL, a high-frequency bipolar oscillating voltage will occur, and the amplitude of the oscillating voltage will increase with the decrease in the load resistance. The load resistance approximates to zero and the amplitude of the oscillating voltage is much higher. This makes it easier for surface flashover along the insulation materials to form and decrease the lifetime of the HVPT.

  2. Spectrum analysis of a voltage source converter due to semiconductor voltage drops

    DEFF Research Database (Denmark)

    Rasmussen, Tonny Wederberg; Eltouki, Mustafa

    2017-01-01

    It is known that power electronic voltage source converters are non-ideal. This paper presents a state-of-the-art review on the effect of semiconductor voltage drop on the output voltage spectrum, using single-phase H-bridge two-level converter topology with natural sampled pulse width modulation....... The paper describes the analysis of output voltage spectrum, when the semiconductor voltage drop is added. The results of the analysis of the spectral contribution including and excluding semiconductor voltage drop reveal a good agreement between the theoretical results, simulations and laboratory...

  3. Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

    International Nuclear Information System (INIS)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-01-01

    We report the current–voltage (I–V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I–V characteristic in the temperature range of 280–400 K. This is to study the effect of temperature on the I–V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A * was 10.32 A·cm −2 ·K −2 , which is close to the theoretical value of 9.4 A·cm −2 ·K −2 for n-InP. The temperature dependence of the I–V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I–V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP. (paper)

  4. Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

    Science.gov (United States)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-12-01

    We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

  5. Immunomodulatory effects of diclofenac in leukocytes through the targeting of Kv1.3 voltage-dependent potassium channels.

    Science.gov (United States)

    Villalonga, Núria; David, Miren; Bielańska, Joanna; González, Teresa; Parra, David; Soler, Concepció; Comes, Núria; Valenzuela, Carmen; Felipe, Antonio

    2010-09-15

    Kv1.3 plays a crucial role in the activation and proliferation of T-lymphocytes and macrophages. While Kv1.3 is responsible for the voltage-dependent potassium current in T-cells, in macrophages this K(+) current is generated by the association of Kv1.3 and Kv1.5. Patients with autoimmune diseases show a high number of effector memory T cells that are characterized by a high expression of Kv1.3 and Kv1.3 antagonists ameliorate autoimmune disorders in vivo. Diclofenac is a non-steroidal anti-inflammatory drug (NSAID) used in patients who suffer from painful autoimmune diseases such as rheumatoid arthritis. In this study, we show that diclofenac impairs immune response via a mechanism that involves Kv1.3. While diclofenac inhibited Kv1.3 expression in activated macrophages and T-lymphocytes, Kv1.5 remained unaffected. Diclofenac also decreased iNOS levels in Raw 264.7 cells, impairing their activation in response to lipopolysaccharide (LPS). LPS-induced macrophage migration and IL-2 production in stimulated Jurkat T-cells were also blocked by pharmacological doses of diclofenac. These effects were mimicked by Margatoxin, a specific Kv1.3 inhibitor, and Charybdotoxin, which blocks both Kv1.3 and Ca(2+)-activated K(+) channels (K(Ca)3.1). Because Kv1.3 is a very good target for autoimmune therapies, the effects of diclofenac on Kv1.3 are of high pharmacological relevance. Copyright 2010 Elsevier Inc. All rights reserved.

  6. Power conditioning using dynamic voltage restorers under different voltage sag types.

    Science.gov (United States)

    Saeed, Ahmed M; Abdel Aleem, Shady H E; Ibrahim, Ahmed M; Balci, Murat E; El-Zahab, Essam E A

    2016-01-01

    Voltage sags can be symmetrical or unsymmetrical depending on the causes of the sag. At the present time, one of the most common procedures for mitigating voltage sags is by the use of dynamic voltage restorers (DVRs). By definition, a DVR is a controlled voltage source inserted between the network and a sensitive load through a booster transformer injecting voltage into the network in order to correct any disturbance affecting a sensitive load voltage. In this paper, modelling of DVR for voltage correction using MatLab software is presented. The performance of the device under different voltage sag types is described, where the voltage sag types are introduced using the different types of short-circuit faults included in the environment of the MatLab/Simulink package. The robustness of the proposed device is evaluated using the common voltage sag indices, while taking into account voltage and current unbalance percentages, where maintaining the total harmonic distortion percentage of the load voltage within a specified range is desired. Finally, several simulation results are shown in order to highlight that the DVR is capable of effective correction of the voltage sag while minimizing the grid voltage unbalance and distortion, regardless of the fault type.

  7. Voltage regulator for generator

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K

    1989-01-17

    It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

  8. Influence of surface losses and the self-pumping effect on current-voltage characteristics of a long Josephson junction

    DEFF Research Database (Denmark)

    Pankratov, A.L.; Sobolev, A.S.; Koshelets, V.P.

    2007-01-01

    We have numerically investigated the dynamics of a long linear Josephson tunnel junction with overlap geometry. Biased by a direct current (dc) and an applied dc magnetic field, the junction has important applications as tunable high frequency oscillator [flux-flow oscillator (FFO......) placed at both ends of the FFO. In our model, the damping parameter depends both on the spatial coordinate and on the amplitude of the ac voltage. In order to find the dc current-voltage curves, the damping parameter has to be calculated self-consistently by successive approximations and time integration...

  9. Effect of applied DC voltages and temperatures on space charge behaviour of multi-layer oil-paper insulation

    Energy Technology Data Exchange (ETDEWEB)

    Tang Chao; Liao Ruijin [The State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University (China); Chen, G [School of Electronics and Computer Science, University of Southampton (United Kingdom); Fu, M, E-mail: tangchao_1981@163.co [AVERA T and D Technology Centre, Stafford (United Kingdom)

    2009-08-01

    In this paper, space charge in a multi-layer oil-paper insulation system was investigated using the pulsed electroacoustic (PEA) technique. A series of measurements had been carried following subjection of the insulation system to different applied voltages and different temperatures. Charge behaviours in the insulation system were analyzed and the influence of temperature on charge dynamics was discussed. The test results shows that homocharge injection takes place under all the test conditions, the applied DC voltage mainly affects the amount of space charge, while the temperature has greater influence on the distribution and mobility of space charge inside oil-paper samples.

  10. Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

    Science.gov (United States)

    Xu, Meili; Xiang, Lanyi; Xu, Ting; Wang, Wei; Xie, Wenfa; Zhou, Dayu

    2017-10-01

    Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V-1 s-1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.

  11. Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qi; Li, Yi; Zhang, Yang; Song, You, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Wang, Xizhang, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Hu, Zheng [Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China. High-Tech Research Institute of Nanjing University (Suzhou), Suzhou 215123 (China); Sun, Huabin; Li, Yun, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Shi, Yi [School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093 (China)

    2014-08-15

    A novel high-κ organometallic lanthanide complex, Eu(tta){sub 3}L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine), is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs). The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μ{sub FET}) of 0.17 cm{sup 2} V{sup −1} s{sup −1}, threshold voltage (V{sub th}) of −0.9 V, on/off current ratio of 5 × 10{sup 3}, and subthreshold slope (SS) of 1.0 V dec{sup −1}, which is much better than that of devices obtained on conventional 300 nm SiO{sub 2} substrate (0.13 cm{sup 2} V{sup −1} s{sup −1}, −7.3 V and 3.1 V dec{sup −1} for μ{sub FET}, V{sub th} and SS value when operated at −30 V). These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

  12. Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

    Directory of Open Access Journals (Sweden)

    Qi Liu

    2014-08-01

    Full Text Available A novel high-κ organometallic lanthanide complex, Eu(tta3L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine, is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs. The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μFET of 0.17 cm2 V−1 s−1, threshold voltage (Vth of −0.9 V, on/off current ratio of 5 × 103, and subthreshold slope (SS of 1.0 V dec−1, which is much better than that of devices obtained on conventional 300 nm SiO2 substrate (0.13 cm2 V−1 s−1, −7.3 V and 3.1 V dec−1 for μFET, Vth and SS value when operated at −30 V. These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

  13. Electron emission of cathode holder of vacuum diode of an intense electron-beam accelerator and its effect on the output voltage

    Directory of Open Access Journals (Sweden)

    Xin-Bing Cheng

    2011-04-01

    Full Text Available The vacuum diode which is used to generate relativistic electron beams is one of the most important parts of a pulsed-power modulator. In this paper, the electron emission of cathode holder of a vacuum diode and its effect on the output voltage is investigated by experiments on an intense electron-beam accelerator with 180 ns full width at half maximum and 200–500 kV output voltage. First, the field emission is analyzed and the electric field of the vacuum chamber is calculated. Then, the flatness of the output voltage is discussed before and after adding an insulation plate when a water load is used. It is found that the electron emission at the edges of the cathode holder is the main reason to cause the change of the flatness. Last, a piece of polyester film is used as a target to further show the electron emission of the cathode holder. This analysis shows that decreasing the electron emission of the cathode holder in such a pulse power modulator could be a good way to improve the quality of the output voltage.

  14. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  15. Influence of current limitation on voltage stability with voltage sourced converter HVDC

    DEFF Research Database (Denmark)

    Zeni, Lorenzo; Jóhannsson, Hjörtur; Hansen, Anca Daniela

    2013-01-01

    A first study of voltage stability with relevant amount of Voltage Sourced Converter based High Voltage Direct Current (VSC-HVDC) transmission is presented, with particular focus on the converters’ behaviour when reaching their rated current. The detrimental effect of entering the current...

  16. Effect of vasoactive intestinal peptide, carbachol and other agonists on the membrane voltage of pancreatic duct cells

    DEFF Research Database (Denmark)

    Pahl, C; Novak, I

    1993-01-01

    pancreatic ducts and, as a physiological response, we measured the basolateral membrane voltage of the duct cells (Vbl) with microelectrodes. Pancreatic ducts were dissected from pancreas of normal rats and bathed in a HCO(3-)(-containing solution. Under control conditions, the average Vbl was between -50...

  17. Effect of particle size, filler loadings and x-ray tube voltage on the transmitted x-ray transmission in tungsten oxide—epoxy composites

    International Nuclear Information System (INIS)

    Noor Azman, N.Z.; Siddiqui, S.A.; Hart, R.; Low, I.M.

    2013-01-01

    The effect of particle size, filler loadings and x-ray tube voltage on the x-ray transmission in WO 3 -epoxy composites has been investigated using the mammography unit and a general radiography unit. Results indicate that nano-sized WO 3 has a better ability to attenuate the x-ray beam generated by lower tube voltages (25–35 kV) when compared to micro-sized WO 3 of the same filler loading. However, the effect of particle size on x-ray transmission was negligible at the higher x-ray tube voltages (40–120 kV). - Highlights: ► Investigated the effect of particle size of WO 3 on the x-ray attenuation ability. ► Nano-sized WO 3 has a better ability to attenuate lower x-ray energies (22–49 kV p ). ► Particle size has negligible effect at the higher x-ray energy range (40–120 kV p ).

  18. Mapping of Residues Forming the Voltage Sensor of the Voltage-Dependent Anion-Selective Channel

    Science.gov (United States)

    Thomas, Lorie; Blachly-Dyson, Elizabeth; Colombini, Marco; Forte, Michael

    1993-06-01

    Voltage-gated ion-channel proteins contain "voltage-sensing" domains that drive the conformational transitions between open and closed states in response to changes in transmembrane voltage. We have used site-directed mutagenesis to identify residues affecting the voltage sensitivity of a mitochondrial channel, the voltage-dependent anion-selective channel (VDAC). Although charge changes at many sites had no effect, at other sites substitutions that increased positive charge also increased the steepness of voltage dependance and substitutions that decreased positive charge decreased voltage dependance by an appropriate amount. In contrast to the plasma membrane K^+ and Na^+ channels, these residues are distributed over large parts of the VDAC protein. These results have been used to define the conformational transitions that accompany voltage gating of an ion channel. This gating mechanism requires the movement of large portions of the VDAC protein through the membrane.

  19. The electrical asymmetry effect in geometrically asymmetric capacitive radio frequency plasmas

    International Nuclear Information System (INIS)

    Schüngel, E.; Schulze, J.; Czarnetzki, U.; Eremin, D.; Mussenbrock, T.

    2012-01-01

    The electrical asymmetry effect (EAE) allows an almost ideal separate control of the mean ion energy, i >, and flux, Γ i , at the electrodes in capacitive radio frequency discharges with identical electrode areas driven at two consecutive harmonics with adjustable phase shift, θ. In such geometrically symmetric discharges, a DC self bias is generated as a function of θ. Consequently, i > can be controlled separately from Γ i by adjusting the phase shift. Here, we systematically study the EAE in low pressure dual-frequency discharges with different electrode areas operated in argon at 13.56 MHz and 27.12 MHz by experiments, kinetic simulations, and analytical modeling. We find that the functional dependence of the DC self bias on θ is similar, but its absolute value is strongly affected by the electrode area ratio. Consequently, the ion energy distributions change and i > can be controlled by adjusting θ, but its control range is different at both electrodes and determined by the area ratio. Under distinct conditions, the geometric asymmetry can be compensated electrically. In contrast to geometrically symmetric discharges, we find the ratio of the maximum sheath voltages to remain constant as a function of θ at low pressures and Γ i to depend on θ at the smaller electrode. These observations are understood by the model. Finally, we study the self-excitation of non-linear plasma series resonance oscillations and its effect on the electron heating.

  20. Effect of a Cooling Step Treatment on a High-Voltage GaN LED During ICP Dry Etching

    Science.gov (United States)

    Lin, Yen-Sheng; Hsiao, Sheng-Yu; Tseng, Chun-Lung; Shen, Ching-Hsing; Chiang, Jung-Sheng

    2017-02-01

    In this study, a lower dislocation density for a GaN surface and a reduced current path are observed at the interface of a SiO2 isolation sidewall, using high-resolution transmission electron microscopy. This is grown using a 3-min cooling step treatment during inductivity coupled plasma dry etching. The lower forward voltage is measured, the leakage current decreases from 53nA to 32nA, and the maximum output power increases from 354.8 W to 357.2 W for an input current of 30 mA. The microstructure and the optoelectronic properties of high-voltage light-emitting-diodes is proven to be affected by the cooling step treatment, which allows enough time to release the thermal energy of the SiO2 isolation well.

  1. Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode

    International Nuclear Information System (INIS)

    Jia Yun-Peng; Zhao Bao; Wu Yu; Zhou Xuan; Li Zhe; Tan Jian; Yang Fei

    2015-01-01

    The temperature dependences of forward voltage drop (V F ) of the fast recovery diodes (FRDs) are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study are presented, which are the lifetime controls of platinum treatment, electron irradiation treatment, and the combined treatment of the above ones. Based on deep level transient spectroscopy (DLTS) measurements, a new level E6 (E C -0.376 eV) is found in the combined lifetime treated (CLT) sample, which is different from the levels of the individual platinum and electron irradiation ones. Comparing the tested V F results of CLT samples with the others, the level E6 is responsible for the degradation of temperature dependence of the forward voltage drop in the FRD. (paper)

  2. The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

    Science.gov (United States)

    Weizer, V. G.; Godlewski, M. P.

    1984-01-01

    It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

  3. Effects of the voltage and time of anodization on modulation of the pore dimensions of AAO films for nanomaterials synthesis

    Science.gov (United States)

    Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Maryam, W.; Ahmad, M. A.; Bououdina, M.

    2015-12-01

    Highly-ordered and hexagonal-shaped nanoporous anodic aluminum oxide (AAO) of 1 μm thickness of Al pre-deposited onto Si substrate using two-step anodization was successfully fabricated. The growth mechanism of the porous AAO film was investigated by anodization current-time behavior for different anodizing voltages and by visualizing the microstructural procedure of the fabrication of AAO film by two-step anodization using cross-sectional and top view of FESEM imaging. Optimum conditions of the process variables such as annealing time of the as-deposited Al thin film and pore widening time of porous AAO film were experimentally determined to obtain AAO films with uniformly distributed and vertically aligned porous microstructure. Pores with diameter ranging from 50 nm to 110 nm and thicknesses between 250 nm and 1400 nm, were obtained by controlling two main influential anodization parameters: the anodizing voltage and time of the second-step anodization. X-ray diffraction analysis reveals amorphous-to-crystalline phase transformation after annealing at temperatures above 800 °C. AFM images show optimum ordering of the porous AAO film anodized under low voltage condition. AAO films may be exploited as templates with desired size distribution for the fabrication of CuO nanorod arrays. Such nanostructured materials exhibit unique properties and hold high potential for nanotechnology devices.

  4. Multidetector CT of pancreatic ductal adenocarcinoma: Effect of tube voltage and iodine load on tumour conspicuity and image quality

    Energy Technology Data Exchange (ETDEWEB)

    Loizou, L.; Leidner, B.; Axelsson, E.; Fischer, M.A.; Grigoriadis, A.; Kartalis, N. [Karolinska Institutet, Division of Medical Imaging and Technology, Department of Clinical Science, Intervention and Technology (CLINTEC), Stockholm (Sweden); C1-46 Karolinska University Hospital Huddinge, Department of Radiology, Stockholm (Sweden); Albiin, N. [Karolinska Institutet, Division of Medical Imaging and Technology, Department of Clinical Science, Intervention and Technology (CLINTEC), Stockholm (Sweden); Ersta Hospital, Department of Radiology, Stockholm (Sweden); Del Chiaro, M.; Segersvaerd, R. [Karolinska University Hospital Huddinge, Division of Surgery, Department of Clinical Science, Intervention and Technology (CLINTEC), Karolinska Institutet and Center for Digestive Diseases, Stockholm (Sweden); Verbeke, C. [Karolinska Institutet and Karolinska University Hospital Huddinge, Division of Pathology, Department of Laboratory Medicine, Stockholm (Sweden); Sundin, A. [Uppsala University Hospital, Department of Surgical Sciences, Division of Radiology, Uppsala University and Department of Radiology, Uppsala (Sweden)

    2016-11-15

    To compare a low-tube-voltage with or without high-iodine-load multidetector CT (MDCT) protocol with a normal-tube-voltage, normal-iodine-load (standard) protocol in patients with pancreatic ductal adenocarcinoma (PDAC) with respect to tumour conspicuity and image quality. Thirty consecutive patients (mean age: 66 years, men/women: 14/16) preoperatively underwent triple-phase 64-channel MDCT examinations twice according to: (i) 120-kV standard protocol (PS; 0.75 g iodine (I)/kg body weight, n = 30) and (ii) 80-kV protocol A (PA; 0.75 g I/kg, n = 14) or protocol B (PB; 1 g I/kg, n = 16). Two independent readers evaluated tumour delineation and image quality blindly for all protocols. A third reader estimated the pancreas-to-tumour contrast-to-noise ratio (CNR). Statistical analysis was performed with the Chi-square test. Tumour delineation was significantly better in PB and PA compared with PS (P = 0.02). The evaluation of image quality was similar for the three protocols (all, P > 0.05). The highest CNR was observed with PB and was significantly better compared to PA (P = 0.02) and PS (P = 0.0002). In patients with PDAC, a low-tube-voltage, high-iodine-load protocol improves tumour delineation and CNR leading to higher tumour conspicuity compared to standard protocol MDCT. (orig.)

  5. Multidetector CT of pancreatic ductal adenocarcinoma: Effect of tube voltage and iodine load on tumour conspicuity and image quality

    International Nuclear Information System (INIS)

    Loizou, L.; Leidner, B.; Axelsson, E.; Fischer, M.A.; Grigoriadis, A.; Kartalis, N.; Albiin, N.; Del Chiaro, M.; Segersvaerd, R.; Verbeke, C.; Sundin, A.

    2016-01-01

    To compare a low-tube-voltage with or without high-iodine-load multidetector CT (MDCT) protocol with a normal-tube-voltage, normal-iodine-load (standard) protocol in patients with pancreatic ductal adenocarcinoma (PDAC) with respect to tumour conspicuity and image quality. Thirty consecutive patients (mean age: 66 years, men/women: 14/16) preoperatively underwent triple-phase 64-channel MDCT examinations twice according to: (i) 120-kV standard protocol (PS; 0.75 g iodine (I)/kg body weight, n = 30) and (ii) 80-kV protocol A (PA; 0.75 g I/kg, n = 14) or protocol B (PB; 1 g I/kg, n = 16). Two independent readers evaluated tumour delineation and image quality blindly for all protocols. A third reader estimated the pancreas-to-tumour contrast-to-noise ratio (CNR). Statistical analysis was performed with the Chi-square test. Tumour delineation was significantly better in PB and PA compared with PS (P = 0.02). The evaluation of image quality was similar for the three protocols (all, P > 0.05). The highest CNR was observed with PB and was significantly better compared to PA (P = 0.02) and PS (P = 0.0002). In patients with PDAC, a low-tube-voltage, high-iodine-load protocol improves tumour delineation and CNR leading to higher tumour conspicuity compared to standard protocol MDCT. (orig.)

  6. Discharge runaway in high power impulse magnetron sputtering of carbon: the effect of gas pressure, composition and target peak voltage

    Science.gov (United States)

    Vitelaru, Catalin; Aijaz, Asim; Constantina Parau, Anca; Kiss, Adrian Emil; Sobetkii, Arcadie; Kubart, Tomas

    2018-04-01

    Pressure and target voltage driven discharge runaway from low to high discharge current density regimes in high power impulse magnetron sputtering of carbon is investigated. The main purpose is to provide a meaningful insight of the discharge dynamics, with the ultimate goal to establish a correlation between discharge properties and process parameters to control the film growth. This is achieved by examining a wide range of pressures (2–20 mTorr) and target voltages (700–850 V) and measuring ion saturation current density at the substrate position. We show that the minimum plasma impedance is an important parameter identifying the discharge transition as well as establishing a stable operating condition. Using the formalism of generalized recycling model, we introduce a new parameter, ‘recycling ratio’, to quantify the process gas recycling for specific process conditions. The model takes into account the ion flux to the target, the amount of gas available, and the amount of gas required for sustaining the discharge. We show that this parameter describes the relation between the gas recycling and the discharge current density. As a test case, we discuss the pressure and voltage driven transitions by changing the gas composition when adding Ne into the discharge. We propose that standard Ar HiPIMS discharges operated with significant gas recycling do not require Ne to increase the carbon ionization.

  7. Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

    International Nuclear Information System (INIS)

    Ma Lin; Feng Shiwei; Zhang Yamin; Deng Bing; Yue Yuan

    2014-01-01

    The effect of drain—source voltage on AlGaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that AlGaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain—source voltage (V DS ) is decreased. Moreover, the relatively low V DS and large drain—source current (I DS ) result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low V DS leads to a relatively low electric field, which leads to the decline of the thermal resistance. (semiconductor devices)

  8. Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

    Science.gov (United States)

    Wan, J.; Cahay, M.; Bandyopadhyay, S.

    2008-06-01

    We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.

  9. Investigation of the double exponential in the current-voltage characteristics of silicon solar cells. [proton irradiation effects on ATS 1 cells

    Science.gov (United States)

    Wolf, M.; Noel, G. T.; Stirn, R. J.

    1977-01-01

    Difficulties in relating observed current-voltage characteristics of individual silicon solar cells to their physical and material parameters were underscored by the unexpected large changes in the current-voltage characteristics telemetered back from solar cells on the ATS-1 spacecraft during their first year in synchronous orbit. Depletion region recombination was studied in cells exhibiting a clear double-exponential dark characteristic by subjecting the cells to proton irradiation. A significant change in the saturation current, an effect included in the Sah, Noyce, Shockley formulation of diode current resulting from recombination in the depletion region, was caused by the introduction of shallow levels in the depletion region by the proton irradiation. This saturation current is not attributable only to diffusion current from outside the depletion region and only its temperature dependence can clarify its origin. The current associated with the introduction of deep-lying levels did not change significantly in these experiments.

  10. The Effects of Voltage and Concentration of Sodium Bicarbonate on Electrochemical Synthesis of Ethanol from Carbon Dioxide Using Brass as Cathode

    Science.gov (United States)

    Ramadan, Septian; Fariduddin, Sholah; Rizki Aminudin, Afianti; Kurnia Hayatri, Antisa; Riyanto

    2017-11-01

    The effects of voltage and concentration of sodium bicarbonate were investigated to determine the optimum conditions of the electrochemical synthesis process to convert carbon dioxide into ethanol. The conversion process is carried out using a sodium bicarbonate electrolyte solution in an electrochemical synthesis reactor equipped with a cathode and anode. As the cathode was used brass, while as the anode carbon was utilized. Sample of the electrochemical synthesis process was analyzed by gas chromatography to determine the content of the compounds produced. The optimum electrochemical synthesis conditions to convert carbon dioxide into ethanol are voltage and concentration of sodium bicarbonate are 3 volts and 0.4 M with ethanol concentration of 1.33%.

  11. Technological Aspects: High Voltage

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

  12. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  13. A Novel Index for Online Voltage Stability Assessment Based on Correlation Characteristic of Voltage Profiles

    Directory of Open Access Journals (Sweden)

    M. R. Aghamohammadi

    2011-06-01

    Full Text Available Abstract: Voltage instability is a major threat for security of power systems. Preserving voltage security margin at a certain limit is a vital requirement for today’s power systems. Assessment of voltage security margin is a challenging task demanding sophisticated indices. In this paper, for the purpose of on line voltage security assessment a new index based on the correlation characteristic of network voltage profile is proposed. Voltage profile comprising all bus voltages contains the effect of network structure, load-generation patterns and reactive power compensation on the system behaviour and voltage security margin. Therefore, the proposed index is capable to clearly reveal the effect of system characteristics and events on the voltage security margin. The most attractive feature for this index is its fast and easy calculation from synchronously measured voltage profile without any need to system modelling and simulation and without any dependency on network size. At any instant of system operation by merely measuring network voltage profile and no further simulation calculation this index could be evaluated with respect to a specific reference profile. The results show that the behaviour of this index with respect to the change in system security is independent of the selected reference profile. The simplicity and easy calculation make this index very suitable for on line application. The proposed approach has been demonstrated on IEEE 39 bus test system with promising results showing its effectiveness and applicability.

  14. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  15. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  16. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  17. Cavity Voltage Phase Modulation MD

    CERN Document Server

    Mastoridis, Themistoklis; Molendijk, John; Timko, Helga; CERN. Geneva. ATS Department

    2016-01-01

    The LHC RF/LLRF system is currently configured for extremely stable RF voltage to minimize transient beam loading effects. The present scheme cannot be extended beyond nominal beam current since the demanded power would exceed the peak klystron power and lead to saturation. A new scheme has therefore been proposed: for beam currents above nominal (and possibly earlier), the cavity phase modulation by the beam will not be corrected (transient beam loading), but the strong RF feedback and One-Turn Delay feedback will still be active for loop and beam stability in physics. To achieve this, the voltage set point will be adapted for each bunch. The goal of this MD was to test a new algorithm that would adjust the voltage set point to achieve the cavity phase modulation that would minimize klystron forward power.

  18. Integrated electrokinetics-adsorption remediation of saline-sodic soils: effects of voltage gradient and contaminant concentration on soil electrical conductivity.

    Science.gov (United States)

    Essa, Mohammed Hussain; Mu'azu, Nuhu Dalhat; Lukman, Salihu; Bukhari, Alaadin

    2013-01-01

    In this study, an integrated in situ remediation technique which couples electrokinetics with adsorption, using locally produced granular activated carbon from date palm pits in the treatment zones that are installed directly to bracket the contaminated soils at bench-scale, is investigated. Natural saline-sodic clay soil, spiked with contaminant mixture (kerosene, phenol, Cr, Cd, Cu, Zn, Pb, and Hg), was used in this study to investigate the effects of voltage gradient, initial contaminant concentration, and polarity reversal rate on the soil electrical conductivity. Box-Behnken Design (BBD) was used for the experimental design and response surface methodology (RSM) was employed to model, optimize, and interpret the results obtained using Design-Expert version 8 platform. The total number of experiments conducted was 15 with voltage gradient, polarity reversal rate, and initial contaminant concentration as variables. The main target response discussed in this paper is the soil electrical conductivity due to its importance in electrokinetic remediation process. Responses obtained were fitted to quadratic models whose R (2) ranges from 84.66% to 99.19% with insignificant lack of fit in each case. Among the investigated factors, voltage gradient and initial contaminant concentration were found to be the most significant influential factors.

  19. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

    2015-08-24

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

  20. Effects of controlling the interface trap densities in InGaZnO thin-film transistors on their threshold voltage shifts

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, S-W.; Lee, J-T.; Roh, Y. [Sungkyunkwan University, Suwon (Korea, Republic of)

    2014-12-15

    In this paper, the threshold voltage stability characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) are discussed. The IGZO TFTs were found to induce a parallel threshold voltage (V{sub th}) shift with changing field effect mobility (μ{sub FE}) or a sub-threshold gate voltage swing (SS) due to various thermal annealing conditions. The IGZO TFT that was post-annealed in an O{sub 2} ambient was found to be more stable for use in oxide-based TFT devices and to have better performance characteristics, such as the on/off current ratio (I{sub on/off} ), SS, and V{sub th}, than other TFTs did. The mechanism for improving the V{sub th} stability in the post-annealed IGZO TFT is a decrease in the number of trap sites for the electrons and the weak oxygen bonding in the IGZO thin films. The device's performance could be significantly affected by adjusting the annealing conditions. This mechanism is closely related to that of modulation annealing, where the number of localized trapped carriers and defect centers at the interface or in the channel layer are reduced.

  1. Integrated Electrokinetics-Adsorption Remediation of Saline-Sodic Soils: Effects of Voltage Gradient and Contaminant Concentration on Soil Electrical Conductivity

    Directory of Open Access Journals (Sweden)

    Mohammed Hussain Essa

    2013-01-01

    Full Text Available In this study, an integrated in situ remediation technique which couples electrokinetics with adsorption, using locally produced granular activated carbon from date palm pits in the treatment zones that are installed directly to bracket the contaminated soils at bench-scale, is investigated. Natural saline-sodic clay soil, spiked with contaminant mixture (kerosene, phenol, Cr, Cd, Cu, Zn, Pb, and Hg, was used in this study to investigate the effects of voltage gradient, initial contaminant concentration, and polarity reversal rate on the soil electrical conductivity. Box-Behnken Design (BBD was used for the experimental design and response surface methodology (RSM was employed to model, optimize, and interpret the results obtained using Design-Expert version 8 platform. The total number of experiments conducted was 15 with voltage gradient, polarity reversal rate, and initial contaminant concentration as variables. The main target response discussed in this paper is the soil electrical conductivity due to its importance in electrokinetic remediation process. Responses obtained were fitted to quadratic models whose R2 ranges from 84.66% to 99.19% with insignificant lack of fit in each case. Among the investigated factors, voltage gradient and initial contaminant concentration were found to be the most significant influential factors.

  2. Facilely solving cathode/electrolyte interfacial issue for high-voltage lithium ion batteries by constructing an effective solid electrolyte interface film

    International Nuclear Information System (INIS)

    Xu, Jingjing; Xia, Qingbo; Chen, Fangyuan; Liu, Tao; Li, Li; Cheng, Xueyuan; Lu, Wei; Wu, Xiaodong

    2016-01-01

    The cathode/electrolyte interface stability is the key factor for the cyclic performance and the safety performance of lithium ion batteries. Suppression of consuming key elements in the electrode materials is essential in this concern. In this purpose, we investigate a facile strategy to solve interfacial issue for high-voltage lithium ion batteries by adding an oxidable fluorinated phosphate, Bis(2,2,2-trifluoroethyl) Phosphite (BTFEP), as a sacrificial additive in electrolyte. We demonstrate that BTFEP additive could be oxidized at slightly above 4.28 V which is a relatively lower voltage than that of solvents, and the oxidative products facilitate in-situ forming a stable solid electrolyte interphase (SEI) film on the cathode surface. The results manifest the SEI film validly restrains the generation of HF and the interfacial side reaction between high-voltage charged LiNi 0.5 Mn 1.5 O 4 (LNMO) and electrolyte, hence, the dissolution of Mn and Ni is effectively suppressed. Finally, the cyclic performance of LNMO after 200 cycles was remarkably improved from 68.4% in blank electrolyte to 95% in 1 wt% BTFEP-adding electrolyte.

  3. The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

    Science.gov (United States)

    Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

    2009-01-01

    CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

  4. Effect of substrate bias voltage on tensile properties of single crystal silicon microstructure fully coated with plasma CVD diamond-like carbon film

    Science.gov (United States)

    Zhang, Wenlei; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

    2018-06-01

    Tensile strength and strength distribution in a microstructure of single crystal silicon (SCS) were improved significantly by coating the surface with a diamond-like carbon (DLC) film. To explore the influence of coating parameters and the mechanism of film fracture, SCS microstructure surfaces (120 × 4 × 5 μm3) were fully coated by plasma enhanced chemical vapor deposition (PECVD) of a DLC at five different bias voltages. After the depositions, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), thermal desorption spectrometry (TDS), surface profilometry, atomic force microscope (AFM) measurement, and nanoindentation methods were used to study the chemical and mechanical properties of the deposited DLC films. Tensile test indicated that the average strength of coated samples was 13.2-29.6% higher than that of the SCS sample, and samples fabricated with a -400 V bias voltage were strongest. The fracture toughness of the DLC film was the dominant factor in the observed tensile strength. Deviations in strength were reduced with increasingly negative bias voltage. The effect of residual stress on the tensile properties is discussed in detail.

  5. Effects of (−-Gallocatechin-3-Gallate on Tetrodotoxin-Resistant Voltage-Gated Sodium Channels in Rat Dorsal Root Ganglion Neurons

    Directory of Open Access Journals (Sweden)

    Jian-Min Jiang

    2013-05-01

    Full Text Available The (−-gallocatechin-3-gallate (GCG concentration in some tea beverages can account for as much as 50% of the total catechins. It has been shown that catechins have analgesic properties. Voltage-gated sodium channels (Nav mediate neuronal action potentials. Tetrodotoxin inhibits all Nav isoforms, but Nav1.8 and Nav1.9 are relatively tetrodotoxin-resistant compared to other isoforms and functionally linked to nociception. In this study, the effects of GCG on tetrodotoxin-resistant Na+ currents were investigated in rat primary cultures of dorsal root ganglion neurons via the whole-cell patch-clamp technique. We found that 1 μM GCG reduced the amplitudes of peak current density of tetrodotoxin-resistant Na+ currents significantly. Furthermore, the inhibition was accompanied by a depolarizing shift of the activation voltage and a hyperpolarizing shift of steady-state inactivation voltage. The percentage block of GCG (1 μM on tetrodotoxin-resistant Na+ current was 45.1% ± 1.1% in 10 min. In addition, GCG did not produce frequency-dependent block of tetrodotoxin-resistant Na+ currents at stimulation frequencies of 1 Hz, 2 Hz and 5 Hz. On the basis of these findings, we propose that GCG may be a potential analgesic agent.

  6. Voltage-Controlled Floating Resistor Using DDCC

    Directory of Open Access Journals (Sweden)

    M. Kumngern

    2011-04-01

    Full Text Available This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of three main components: MOS transistor operating in the non-saturation region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-saturation region is used to configure a floating linear resistor. The DDCC and the MOS transistor voltage divider are used for canceling the nonlinear component term of MOS transistor in the non-saturation region to obtain a linear current/voltage relationship. The DDCC is employed to provide a simple summer of the circuit. This circuit offers an ease for realizing the voltage divider circuit and the temperature effect that includes in term of threshold voltage can be compensated. The proposed configuration employs only 16 MOS transistors. The performances of the proposed circuit are simulated with PSPICE to confirm the presented theory.

  7. Voltage Weak DC Distribution Grids

    NARCIS (Netherlands)

    Hailu, T.G.; Mackay, L.J.; Ramirez Elizondo, L.M.; Ferreira, J.A.

    2017-01-01

    This paper describes the behavior of voltage weak DC distribution systems. These systems have relatively small system capacitance. The size of system capacitance, which stores energy, has a considerable effect on the value of fault currents, control complexity, and system reliability. A number of

  8. Measurement of the Magnetic Fields from High-Voltage (230 kV Substations in Tehran and Assessment of Their Effects

    Directory of Open Access Journals (Sweden)

    Mahdieh Sharifi Fard

    2010-06-01

    Full Text Available Introduction: Recent industrial developments in human societies have caused rapid advancements in technologies of production and distribution of electricity, which in turn result in enhancement of power networks and utilization of high voltages. These networks and the high voltages in transfer lines cause the exposure to electric and magnetic fields. In this study, the situation regarding the magnetic fields from high-voltage (230 kV substations in Tehran was investigated. Material and Methods: In this study, 8 high-voltage (230 kV substations were selected (Shous, Shahid Firouzi, Ozgol, Kan, Tehranpars, Azadegan, Ghorkhane and Besat substations. The premises of each substation was divided into some stations and measurements were done in each one. Measurements were done according to the IEEE std 644-1994 Standard in a way that the device, specifically its probe, was kept at a height of 1 meter above the ground surface. Then, we tried to examine the probable effects of exposure to magnetic fields through the Essex questionnaire, with Cronbach coefficient of 94%, completed by the employees of the substations. These questionnaires were completed by substation operators as an exposed group (36 persons and the employees of the office section of the Tehran regional electric company as a witness group (32 persons. Results: The measured density in none of the stations exceeded the standard limits of the International Commission on Non-Ionizing Radiation Protection. With regard to the questionnaire results about mental and neurological, cardiac and respiratory, and gastrointestinal and auditory disorders, we observed significant differences between witness and exposed groups, however, regarding skin allergies, there was no significant difference. Conclusion: Among all control rooms, the highest measured magnetic field was 6.9 mG in the Ozgol Substation Control Room and the lowest was 2 mG in the post of Shahid Firouzi. The control room of Ozgol

  9. Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

    Science.gov (United States)

    Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

    1988-01-01

    Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

  10. Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

    Science.gov (United States)

    Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

    2015-12-14

    Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

  11. Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

    Science.gov (United States)

    Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

    2015-01-01

    Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

  12. Voltage control of ferromagnetic resonance

    Directory of Open Access Journals (Sweden)

    Ziyao Zhou

    2016-06-01

    Full Text Available Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME coupling mechanism: strain/stress, interfacial charge, spin–electromagnetic (EM coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin–EM coupling and exchange coupling.

  13. Reduction the effects of opamp finite gain and offset voltage in LDI termination with a minus one half delay of SC ladder filters

    Directory of Open Access Journals (Sweden)

    Radev Nikolay A.

    2006-01-01

    Full Text Available In this paper a combined approach for reducing the effects of op amp imperfections (finite gain A and offset voltage VOS in first-order SC cell, realizing LDI (loss less discrete integrator termination with a minus one half delay is presented. First, the conventional integrator is replaced with gain- and offset-compensated (GOC integrator. Next, the gain errors m(ω and the phase errors θ(ω are further reduced by using the precise op amp gain approach in the GOC structure. The variation of the dc gain A from its nominal value A0 is taken into account.

  14. Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode.

    Science.gov (United States)

    Chen, Horng-Shyang; Liu, Zhan Hui; Shih, Pei-Ying; Su, Chia-Ying; Chen, Chih-Yen; Lin, Chun-Han; Yao, Yu-Feng; Kiang, Yean-Woei; Yang, C C

    2014-04-07

    A reverse-biased voltage is applied to either device in the vertical configuration of two light-emitting diodes (LEDs) grown on patterned and flat Si (110) substrates with weak and strong quantum-confined Stark effects (QCSEs), respectively, in the InGaN/GaN quantum wells for independently controlling the applied voltage across and the injection current into the p-i-n junction in the lateral configuration of LED operation. The results show that more carrier supply is needed in the LED of weaker QCSE to produce a carrier screening effect for balancing the potential tilt in increasing the forward-biased voltage, when compared with the LED of stronger QCSE. The small spectral shift range in increasing injection current in the LED of weaker QCSE is attributed not only to the weaker QCSE, but also to its smaller device resistance such that a given increment of applied voltage leads to a larger increment of injection current. From a viewpoint of practical application in LED operation, by applying a reverse-biased voltage in the vertical configuration, the applied voltage and injection current in the lateral configuration can be independently controlled by adjusting the vertical voltage for keeping the emission spectral peak fixed.

  15. Report on health and environmental effects of electromagnetic fields produced by high and very high voltage lines

    International Nuclear Information System (INIS)

    2010-01-01

    In its first part, this report presents some characteristics and properties of electric, magnetic and electromagnetic fields, indicates which are the artificial sources of exposure to very low frequency electromagnetic fields, and gives an overview of some investigations and researches on the exposure to magnetic fields. The second part contains a description of the French high and very high voltage network, its role and development. It also discusses the possibility of burying these lines, and outlines the importance of citizen participation. The third part deals with the potential impacts on health; it comments the results of international studies, discusses the problem of electro-hypersensitivity (EHS) and the relationship between electric and magnetic fields and infantile leukaemia. The fourth part deals with the potential impacts on the environment, animals, agriculture

  16. Effects of Input Voltage on Flow Separation Control for Low-Pressure Turbine at Low Reynolds Number by Plasma Actuators

    Directory of Open Access Journals (Sweden)

    Takayuki Matsunuma

    2012-01-01

    Full Text Available Active flow control using dielectric barrier discharge (DBD plasma actuators was investigated to reattach the simulated boundary layer separation on the suction surface of a turbine blade at low Reynolds number, Re = 1.7 × 104. The flow separation is induced on a curved plate installed in the test section of a low-speed wind tunnel. Particle image velocimetry (PIV was used to obtain instantaneous and time-averaged two-dimensional velocity measurements. The amplitude of input voltage for the plasma actuator was varied from ±2.0 kV to ±2.8 kV. The separated flow reattached on the curved wall when the input voltage was ±2.4 kV and above. The displacement thickness of the boundary layer near the trailing edge decreased by 20% at ±2.0 kV. The displacement thickness was suddenly reduced as much as 56% at ±2.2 kV, and it was reduced gradually from ±2.4 kV to ±2.8 kV (77% reduction. The total pressure loss coefficient, estimated from the boundary layer displacement thickness and momentum thickness, was 0.172 at the baseline (actuator off condition. The total pressure loss was reduced to 0.107 (38% reduction at ±2.2 kV and 0.078 (55% reduction at ±2.8 kV.

  17. The Nitric Oxide Donor SNAP-Induced Amino Acid Neurotransmitter Release in Cortical Neurons. Effects of Blockers of Voltage-Dependent Sodium and Calcium Channels

    Science.gov (United States)

    Merino, José Joaquín; Arce, Carmen; Naddaf, Ahmad; Bellver-Landete, Victor; Oset-Gasque, Maria Jesús; González, María Pilar

    2014-01-01

    Background The discovery that nitric oxide (NO) functions as a signalling molecule in the nervous system has radically changed the concept of neuronal communication. NO induces the release of amino acid neurotransmitters but the underlying mechanisms remain to be elucidated. Findings The aim of this work was to study the effect of NO on amino acid neurotransmitter release (Asp, Glu, Gly and GABA) in cortical neurons as well as the mechanism underlying the release of these neurotransmitters. Cortical neurons were stimulated with SNAP, a NO donor, and the release of different amino acid neurotransmitters was measured by HPLC. The involvement of voltage dependent Na+ and Ca2+ channels as well as cGMP in its mechanism of action was evaluated. Conclusions Our results indicate that NO induces release of aspartate, glutamate, glycine and GABA in cortical neurons and that this release is inhibited by ODQ, an inhibitor of soluble guanylate cyclase. Thus, the NO effect on amino acid neurotransmission could be mediated by cGMP formation in cortical neurons. Our data also demonstrate that the Na+ and Ca2+ voltage- dependent calcium channels are involved in the NO effects on cortical neurons. PMID:24598811

  18. The nitric oxide donor SNAP-induced amino acid neurotransmitter release in cortical neurons. Effects of blockers of voltage-dependent sodium and calcium channels.

    Science.gov (United States)

    Merino, José Joaquín; Arce, Carmen; Naddaf, Ahmad; Bellver-Landete, Victor; Oset-Gasque, Maria Jesús; González, María Pilar

    2014-01-01

    The discovery that nitric oxide (NO) functions as a signalling molecule in the nervous system has radically changed the concept of neuronal communication. NO induces the release of amino acid neurotransmitters but the underlying mechanisms remain to be elucidated. The aim of this work was to study the effect of NO on amino acid neurotransmitter release (Asp, Glu, Gly and GABA) in cortical neurons as well as the mechanism underlying the release of these neurotransmitters. Cortical neurons were stimulated with SNAP, a NO donor, and the release of different amino acid neurotransmitters was measured by HPLC. The involvement of voltage dependent Na+ and Ca2+ channels as well as cGMP in its mechanism of action was evaluated. Our results indicate that NO induces release of aspartate, glutamate, glycine and GABA in cortical neurons and that this release is inhibited by ODQ, an inhibitor of soluble guanylate cyclase. Thus, the NO effect on amino acid neurotransmission could be mediated by cGMP formation in cortical neurons. Our data also demonstrate that the Na+ and Ca2+ voltage- dependent calcium channels are involved in the NO effects on cortical neurons.

  19. The nitric oxide donor SNAP-induced amino acid neurotransmitter release in cortical neurons. Effects of blockers of voltage-dependent sodium and calcium channels.

    Directory of Open Access Journals (Sweden)

    José Joaquín Merino

    Full Text Available The discovery that nitric oxide (NO functions as a signalling molecule in the nervous system has radically changed the concept of neuronal communication. NO induces the release of amino acid neurotransmitters but the underlying mechanisms remain to be elucidated.The aim of this work was to study the effect of NO on amino acid neurotransmitter release (Asp, Glu, Gly and GABA in cortical neurons as well as the mechanism underlying the release of these neurotransmitters. Cortical neurons were stimulated with SNAP, a NO donor, and the release of different amino acid neurotransmitters was measured by HPLC. The involvement of voltage dependent Na+ and Ca2+ channels as well as cGMP in its mechanism of action was evaluated.Our results indicate that NO induces release of aspartate, glutamate, glycine and GABA in cortical neurons and that this release is inhibited by ODQ, an inhibitor of soluble guanylate cyclase. Thus, the NO effect on amino acid neurotransmission could be mediated by cGMP formation in cortical neurons. Our data also demonstrate that the Na+ and Ca2+ voltage- dependent calcium channels are involved in the NO effects on cortical neurons.

  20. Optical sensors for the measurement of electric current and voltage

    Energy Technology Data Exchange (ETDEWEB)

    Rutgers, W R; Hulshof, H J.M.; Laurensse, I J; van der Wey, A H

    1987-01-01

    Optical sensors for the measurement of electrical current and voltage were developed for application in electric power systems. The current sensor, based on the Faraday effect in a monomode glass fiber, and the voltage sensor, based on the transverse Pockels effect in a crystal, are demonstrated in wide-band (10 MHz) interference-free measurements of pulsed currents and impulse voltages.

  1. based dynamic voltage restorer

    African Journals Online (AJOL)

    HOD

    operation due to presence of increased use of nonlinear loads (computers, microcontrollers ... simulations of a dynamic voltage restorer (DVR) was achieved using MATLAB/Simulink. ..... using Discrete PWM generator, then the IGBT inverter.

  2. Effects of oxide replacement with fluoride at the CoFeB interface on interface magnetic anisotropy and its voltage control

    Science.gov (United States)

    Pankieiev, Mykhailo; Kita, Koji

    2018-05-01

    In this paper we report results of improving Co60Fe20B20 interface perpendicular magnetic anisotropy (PMA) by replacing neighbor oxide layer with fluoride one. We expected that fluorine as element with higher than oxide electronegativity could more effectively attract electrons from out-of-plane d orbitals of ferromagnetic, increasing role of in-plane orbitals. By this we wanted to increase PMA and its response to applied voltage bias. Polar magneto-optic Kerr effect measurement show decreasing of out-of-plane magnetic field needed to change magnetization to perpendicular in stacks with oxygen replaced by fluorine as well as increasing of coefficient of response to applied voltage α from < 10 fJ/Vm for CoFeB/Al2O3 interface to 20 fJ/Vm for CoFeB/AlF3/Al2O3 and 22 fJ/Vm for CoFeB/MgF2 stacks. Direct chemical interaction of Co with F was confirmed by x-ray photoelectron spectroscopy (XPS) measurement of Co2p core level region. Moreover angular-resolved XPS showed that F tends to stay at CoFeB interface rather than diffuse out of it.

  3. Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

    Science.gov (United States)

    Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

    2016-04-01

    Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

  4. Effect of samarium in corrosion and microstructure of Al-5Zn-0.5Cu as low driving voltage sacrificial anode

    Science.gov (United States)

    Pratesa, Yudha; Ferdian, Deni; Ramadhan, Fajar Yusya; Maulana, Bramuda

    2018-05-01

    Sacrificial Anode Low voltage is the latest generation of the sacrificial anode that can prevent the occurrence of Hydrogen Cracking (HIC) due to overprotection. The Al-5n-0.5Cu alloy showed the potential to be developed as the new sacrificial anode. However, the main problem is copper made Al2Cu intermetallic in grain boundary. Samarium is added to modify the shape of the intermetallic to make it finer and make the corrosion uniform. Several characterizations were conducted to analyze the effect of Samarium. Scanning electron microscope (SEM) and Energy dispersive spectroscopy was used to analyzed the microstructure of the alloy. Metallography preparation was prepared for SEM analysis. Corrosion behavior was characterized by cyclic polarization in 3.5% NaCl solution. The results show samarium can change the shape of intermetallic and refine the grains. In addition, samarium makes better pitting resistance and exhibits a tendency for uniform corrosion. It is indicated by the loop reduction (ΔEpit-prot). Current density increased as an effect of samarium addition from 6x10-5 Ampere (Al-5Zn-0.5Cu) to 2.5x10-4 Ampere (Al-5Zn-0.5Cu-0.5Sm). Steel potential protection increased after addition of samarium which is an indication the possibility of Al-Zn-Cu-Sm to be used as low voltage sacrificial anode.

  5. Studies on the radicidation of natural food colorants. Effects of electron energy (accelerating voltages) and dose rate of ionizing radiation on functional properties of beet red colorant

    International Nuclear Information System (INIS)

    Higashimura, Yutaka; Tada, Mikiro; Furuta, Masakazu

    2003-01-01

    In order to the practical use of radicidation of beet red, natural food colorant with low heat stability and high possibility of microbe contamination, we studied on the energy dependency and dose rate effect for the influence on functional properties of the beet red colorant. For the elucidation of energy dependency, the γ-ray (1.33 MeV) and electron beams with different accelerating voltages (0.75, 1, 2.5, 5 and 10 MeV) were used. The dose rate effect was studied under the different dose rate by using γ-ray (0.723, 1.91 and 4.55 kGy/h) and electron beams with accelerating voltage of 10 MeV (1.0 x 10 3 , 2.6 x 10 3 , 7.0 x 10 3 , 7.0 x 10 3 , 2.0 x 10 4 and 5.0 x 10 4 kGy/h). The results obtained in this study showed that regardless of these energy and dose rate, the functional properties of the beet red colorant were little affected by irradiation less than 25 kGy of ionizing radiations. (author)

  6. Image quality and radiation dose of brain computed tomography in children: effects of decreasing tube voltage from 120 kVp to 80 kVp

    International Nuclear Information System (INIS)

    Park, Ji Eun; Choi, Young Hun; Cheon, Jung-Eun; Kim, Woo Sun; Kim, In-One; Cho, Hyun Suk; Ryu, Young Jin; Kim, Yu Jin

    2017-01-01

    Computed tomography (CT) has generated public concern associated with radiation exposure, especially for children. Lowering the tube voltage is one strategy to reduce radiation dose. To assess the image quality and radiation dose of non-enhanced brain CT scans acquired at 80 kilo-voltage peak (kVp) compared to those at 120 kVp in children. Thirty children who had undergone both 80- and 120-kVp non-enhanced brain CT were enrolled. For quantitative analysis, the mean attenuation of white and gray matter, attenuation difference, noise, signal-to-noise ratio, contrast-to-noise ratio and posterior fossa artifact index were measured. For qualitative analysis, noise, gray-white matter differentiation, artifact and overall image quality were scored. Radiation doses were evaluated by CT dose index, dose-length product and effective dose. The mean attenuations of gray and white matter and contrast-to-noise ratio were significantly increased at 80 kVp, while parameters related to image noise, i.e. noise, signal-to-noise ratio and posterior fossa artifact index were higher at 80 kVp than at 120 kVp. In qualitative analysis, 80-kVp images showed improved gray-white differentiation but more artifacts compared to 120-kVp images. Subjective image noise and overall image quality scores were similar between the two scans. Radiation dose parameters were significantly lower at 80 kVp than at 120 kVp. In pediatric non-enhanced brain CT scans, a decrease in tube voltage from 120 kVp to 80 kVp resulted in improved gray-white matter contrast, comparable image quality and decreased radiation dose. (orig.)

  7. Image quality and radiation dose of brain computed tomography in children: effects of decreasing tube voltage from 120 kVp to 80 kVp.

    Science.gov (United States)

    Park, Ji Eun; Choi, Young Hun; Cheon, Jung-Eun; Kim, Woo Sun; Kim, In-One; Cho, Hyun Suk; Ryu, Young Jin; Kim, Yu Jin

    2017-05-01

    Computed tomography (CT) has generated public concern associated with radiation exposure, especially for children. Lowering the tube voltage is one strategy to reduce radiation dose. To assess the image quality and radiation dose of non-enhanced brain CT scans acquired at 80 kilo-voltage peak (kVp) compared to those at 120 kVp in children. Thirty children who had undergone both 80- and 120-kVp non-enhanced brain CT were enrolled. For quantitative analysis, the mean attenuation of white and gray matter, attenuation difference, noise, signal-to-noise ratio, contrast-to-noise ratio and posterior fossa artifact index were measured. For qualitative analysis, noise, gray-white matter differentiation, artifact and overall image quality were scored. Radiation doses were evaluated by CT dose index, dose-length product and effective dose. The mean attenuations of gray and white matter and contrast-to-noise ratio were significantly increased at 80 kVp, while parameters related to image noise, i.e. noise, signal-to-noise ratio and posterior fossa artifact index were higher at 80 kVp than at 120 kVp. In qualitative analysis, 80-kVp images showed improved gray-white differentiation but more artifacts compared to 120-kVp images. Subjective image noise and overall image quality scores were similar between the two scans. Radiation dose parameters were significantly lower at 80 kVp than at 120 kVp. In pediatric non-enhanced brain CT scans, a decrease in tube voltage from 120 kVp to 80 kVp resulted in improved gray-white matter contrast, comparable image quality and decreased radiation dose.

  8. Image quality and radiation dose of brain computed tomography in children: effects of decreasing tube voltage from 120 kVp to 80 kVp

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Eun [Kyung Hee University Hospital, Department of Radiology, Graduate School, Seoul (Korea, Republic of); Choi, Young Hun [Seoul National University Hospital, Department of Radiology, Seoul (Korea, Republic of); Seoul National University College of Medicine, Department of Radiology, Seoul (Korea, Republic of); Cheon, Jung-Eun; Kim, Woo Sun; Kim, In-One [Seoul National University Hospital, Department of Radiology, Seoul (Korea, Republic of); Seoul National University College of Medicine, Department of Radiology, Seoul (Korea, Republic of); Seoul National University Medical Research Center, Institute of Radiation Medicine, Seoul (Korea, Republic of); Cho, Hyun Suk; Ryu, Young Jin; Kim, Yu Jin [Seoul National University Hospital, Department of Radiology, Seoul (Korea, Republic of)

    2017-05-15

    Computed tomography (CT) has generated public concern associated with radiation exposure, especially for children. Lowering the tube voltage is one strategy to reduce radiation dose. To assess the image quality and radiation dose of non-enhanced brain CT scans acquired at 80 kilo-voltage peak (kVp) compared to those at 120 kVp in children. Thirty children who had undergone both 80- and 120-kVp non-enhanced brain CT were enrolled. For quantitative analysis, the mean attenuation of white and gray matter, attenuation difference, noise, signal-to-noise ratio, contrast-to-noise ratio and posterior fossa artifact index were measured. For qualitative analysis, noise, gray-white matter differentiation, artifact and overall image quality were scored. Radiation doses were evaluated by CT dose index, dose-length product and effective dose. The mean attenuations of gray and white matter and contrast-to-noise ratio were significantly increased at 80 kVp, while parameters related to image noise, i.e. noise, signal-to-noise ratio and posterior fossa artifact index were higher at 80 kVp than at 120 kVp. In qualitative analysis, 80-kVp images showed improved gray-white differentiation but more artifacts compared to 120-kVp images. Subjective image noise and overall image quality scores were similar between the two scans. Radiation dose parameters were significantly lower at 80 kVp than at 120 kVp. In pediatric non-enhanced brain CT scans, a decrease in tube voltage from 120 kVp to 80 kVp resulted in improved gray-white matter contrast, comparable image quality and decreased radiation dose. (orig.)

  9. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  10. Low-voltage gyrotrons

    International Nuclear Information System (INIS)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-01-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5–10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%–2% in the submillimeter wavelength region).

  11. Practical considerations in voltage stability assessment

    Energy Technology Data Exchange (ETDEWEB)

    Kundur, P; Gao, B [Powertech Labs. Inc., Surrey, BC (Canada)

    1994-12-31

    This paper deals with some of the most important practical issues related to voltage stability assessment of large practical systems. A brief discussion of the practical aspects of voltage stability problem and prevention of voltage instability is given first, followed by descriptions of different analytical techniques and tools for voltage stability analysis. Presentations of analytical tools is focused on the VSTAB program which incorporates the modal analysis, continuation power flow, and shortest distance to instability techniques, Finally, an example case study of a practical large system is presented. The case study illustrates how modal analysis is used to determine the most effective load shedding scheme for preventing voltage instability. (author) 15 refs., 2 figs., 2 tabs.

  12. Non-contact current and voltage sensor

    Science.gov (United States)

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  13. G-protein mediates voltage regulation of agonist binding to muscarinic receptors: effects on receptor-Na+ channel interaction

    International Nuclear Information System (INIS)

    Cohen-Armon, M.; Garty, H.; Sokolovsky, M.

    1988-01-01

    The authors previous experiments in membranes prepared from rat heart and brain led them to suggest that the binding of agonist to the muscarinic receptors and to the Na + channels is a coupled event mediated by guanine nucleotide binding protein(s) [G-protein(s)]. These in vitro findings prompted us to employ synaptoneurosomes from brain stem tissue to examine (i) the binding properties of [ 3 H] acetylcholine at resting potential and under depolarization conditions in the absence and presence of pertussis toxin; (ii) the binding of [ 3 H]batrachotoxin to Na + channel(s) in the presence of the muscarinic agonists; and (iii) muscarinically induced 22 Na + uptake in the presence and absence of tetrodotoxin, which blocks Na + channels. The findings indicate that agonist binding to muscarinic receptors is voltage dependent, that this process is mediated by G-protein(s), and that muscarinic agonists induce opening of Na + channels. The latter process persists even after pertussis toxin treatment, indicating that it is not likely to be mediated by pertussis toxin sensitive G-protein(s). The system with its three interacting components-receptor, G-protein, and Na + channel-is such that at resting potential the muscarinic receptor induces opening of Na + channels; this property may provide a possible physiological mechanism for the depolarization stimulus necessary for autoexcitation or repetitive firing in heart or brain tissues

  14. Analysis of the Effect of Channel Leakage on Design, Characterization and Modelling of a High Voltage Pseudo-Floating Gate Sensor-Front-End

    Directory of Open Access Journals (Sweden)

    Luca Marchetti

    2017-10-01

    Full Text Available In this paper, we analyze the effects of channel leakage on the design, modelling and characterization of a high voltage pseudo-floating gate amplifier (PFGA used as sensor front-end. Leakages are known as a major challenge in new modern CMOS technologies, which are used to bias the PFGA, and consequently affect the behavior of the amplifier. As high voltages are desired for actuation of many types of resonating sensors, especially in ultrasound applications, PFGA implemented in high voltage and low leakage technologies, such as older CMOS fabrication processes or power MOSFET can be the only option. The challenge with these technologies used to implement the PFGA is that the leakages are very low, which affect the biasing of the floating gate. However, the numerous advantages of this type of amplifier, implemented with modern fabrication processes, such as high flexibility, compactness, low power consumption , etc. encouraged the authors to research about this topic. This work provides analysis of the working principle and the design rules for this amplifier, emphasizing the major differences between PFGA implemented in low leakage and high leakage technologies. Static and dynamic analysis, input offset and non-linearity of the PFGA are the main topics of this article. Three different design approaches are presented in this paper, in order to provide a more general design procedure and offset compensation for any low leakage PFGA. The amplifier has been simulated in AMS- 0 . 35 μ m CMOS models for supply voltages of 5 V and 10 V. Two prototypes have been realized to verify the validity of the modelling and the simulation results. Both devices have been realized by using discrete components and mounted on a printed circuit board. In this work, MOSFETs are realized by using commercial IC CD4007UB and 2N7000. Measurement results of the first prototype proved that the implementation of a low leakage PFGA is possible after that the input offset of

  15. Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

    International Nuclear Information System (INIS)

    Tian Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2002-01-01

    Dynamic plasma-based thin-film deposition incorporating ion mixing and plasma immersion is an effective technique to synthesize nitride-based hard films. We have fabricated TiN films using a filtered titanium vacuum arc in a nitrogen plasma environment. A pulsed high voltage is applied to the target for a short time when the metallic arc is fired to attain simultaneous plasma deposition and ion mixing. We investigate the dependence of the corrosion resistance and interfacial structure of the treated samples on the applied voltage. Our Auger results reveal an oxygen-rich surface film due to the non-ultra-high-vacuum conditions and high affinity of oxygen to titanium. The corrosion current is reduced by two orders of magnitude comparing the sample processed at 8 kV to the untreated sample, but the 23 kV sample unexpectedly shows worse results. The pitting potential diminishes substantially although the corrosion current is similar to that observed in the 8 kV sample. The polarization test data are consistent with our scanning electron microscopy observation, corroborating the difference in the pitting distribution and appearance. This anomalous behavior is believed to be due to the change in the chemical composition as a result of high-energy ion bombardment

  16. Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

    Science.gov (United States)

    Bao, Meng-tian; Wang, Ying

    2017-02-01

    In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

  17. Effects of bias voltage and annealing on the structure and mechanical properties of WC0.75N0.25 thin films

    International Nuclear Information System (INIS)

    Su, Y.D.; Hu, C.Q.; Wen, M.; Wang, C.; Liu, D.S.; Zheng, W.T.

    2009-01-01

    We investigated the effects of both bias voltage and annealing on the structure and mechanical properties of WC 0.75 N 0.25 thin films, deposited on Si (1 0 0) substrates by a direct current reactive magnetron sputtering system, in which the negative substrate bias voltage (V b ) was varied from floating (-1.6 V) to -200 V, and the deposited films were annealed at 800 deg. C for 2 h. The X-ray photoelectron spectroscopy and selected area electron diffraction analyses, along with the density-functional theory (DFT) calculations on the electronic structure, showed that WC 0.75 N 0.25 films were a single-phase of carbonitrides. After annealing, a significant decrease in hardness for the films was observed, being a result of point-defect annihilation as V b was in the range of floating to -120 V. However, when V b was in the range of -160 to -200 V, the hardness increased from ∼37 GPa for the as-deposited film to a maximum of ∼43 GPa for the annealed one. This increase in hardness after annealing might be attributed to age-hardening.

  18. Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

    International Nuclear Information System (INIS)

    Ma Da; Luo Xiao-Rong; Wei Jie; Tan Qiao; Zhou Kun; Wu Jun-Feng

    2016-01-01

    A new ultra-low specific on-resistance (R on,sp ) vertical double diffusion metal–oxide–semiconductor field-effect transistor (VDMOS) with continuous electron accumulation (CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the R on,sp but also makes the R on,sp almost independent of the n-pillar doping concentration (N n ). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the N n , and further reduces the R on,sp . Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the R on,sp by 80% compared with the conventional super-junction VDMOS (CSJ-VDMOS) at the same high breakdown voltage (BV). (paper)

  19. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  20. Voltage Balancing Control of Diode-Clamped Multilevel Inverter

    Directory of Open Access Journals (Sweden)

    ŞCHIOP Adrian

    2013-10-01

    Full Text Available In this paper is developed a control scheme for mono-phase diode clamped inverter to achieve balancing voltages on inverter capacitors. First, it develops a control scheme without taking into account the need to balance voltage on two capacitors. It examines the effects on the output voltage inverter, and then it realizes two control schemes that will balance the voltages. The simulations of control schemes were performed in OrCAD Pspice.

  1. Measurement of the internal stress and electric field in a resonating piezoelectric transformer for high-voltage applications using the electro-optic and photoelastic effects.

    Science.gov (United States)

    VanGordon, James A; Kovaleski, Scott D; Norgard, Peter; Gall, Brady B; Dale, Gregory E

    2014-02-01

    The high output voltages from piezoelectric transformers are currently being used to accelerate charged particle beams for x-ray and neutron production. Traditional methods of characterizing piezoelectric transformers (PTs) using electrical probes can decrease the voltage transformation ratio of the device due to the introduction of load impedances on the order of hundreds of kiloohms to hundreds of megaohms. Consequently, an optical diagnostic was developed that used the photoelastic and electro-optic effects present in piezoelectric materials that are transparent to a given optical wavelength to determine the internal stress and electric field. The combined effects of the piezoelectric, photoelastic, and electro-optic effects result in a time-dependent change the refractive indices of the material and produce an artificially induced, time-dependent birefringence in the piezoelectric material. This induced time-dependent birefringence results in a change in the relative phase difference between the ordinary and extraordinary wave components of a helium-neon laser beam. The change in phase difference between the wave components was measured using a set of linear polarizers. The measured change in phase difference was used to calculate the stress and electric field based on the nonlinear optical properties, the piezoelectric constitutive equations, and the boundary conditions of the PT. Maximum stresses of approximately 10 MPa and electric fields of as high as 6 kV/cm were measured with the optical diagnostic. Measured results were compared to results from both a simple one-dimensional (1D) model of the piezoelectric transformer and a three-dimensional (3D) finite element model. Measured stresses and electric fields along the length of an operating length-extensional PT for two different electrical loads were within at least 50 % of 3D finite element simulated results. Additionally, the 3D finite element results were more accurate than the results from the 1D model

  2. Measurement of the internal stress and electric field in a resonating piezoelectric transformer for high-voltage applications using the electro-optic and photoelastic effects

    Energy Technology Data Exchange (ETDEWEB)

    VanGordon, James A.; Kovaleski, Scott D., E-mail: kovaleskis@missouri.edu; Norgard, Peter; Gall, Brady B. [Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Dale, Gregory E. [High Power Electrodynamics Group, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2014-02-15

    The high output voltages from piezoelectric transformers are currently being used to accelerate charged particle beams for x-ray and neutron production. Traditional methods of characterizing piezoelectric transformers (PTs) using electrical probes can decrease the voltage transformation ratio of the device due to the introduction of load impedances on the order of hundreds of kiloohms to hundreds of megaohms. Consequently, an optical diagnostic was developed that used the photoelastic and electro-optic effects present in piezoelectric materials that are transparent to a given optical wavelength to determine the internal stress and electric field. The combined effects of the piezoelectric, photoelastic, and electro-optic effects result in a time-dependent change the refractive indices of the material and produce an artificially induced, time-dependent birefringence in the piezoelectric material. This induced time-dependent birefringence results in a change in the relative phase difference between the ordinary and extraordinary wave components of a helium-neon laser beam. The change in phase difference between the wave components was measured using a set of linear polarizers. The measured change in phase difference was used to calculate the stress and electric field based on the nonlinear optical properties, the piezoelectric constitutive equations, and the boundary conditions of the PT. Maximum stresses of approximately 10 MPa and electric fields of as high as 6 kV/cm were measured with the optical diagnostic. Measured results were compared to results from both a simple one-dimensional (1D) model of the piezoelectric transformer and a three-dimensional (3D) finite element model. Measured stresses and electric fields along the length of an operating length-extensional PT for two different electrical loads were within at least 50 % of 3D finite element simulated results. Additionally, the 3D finite element results were more accurate than the results from the 1D model

  3. Reliability of supply of switchgear for auxiliary low voltage in substations extra high voltage to high voltage

    Directory of Open Access Journals (Sweden)

    Perić Dragoslav M.

    2015-01-01

    Full Text Available Switchgear for auxiliary low voltage in substations (SS of extra high voltages (EHV to high voltage (HV - SS EHV/HV kV/kV is of special interest for the functioning of these important SS, as it provides a supply for system of protection and other vital functions of SS. The article addresses several characteristic examples involving MV lines with varying degrees of independence of their supply, and the possible application of direct transformation EHV/LV through special voltage transformers. Auxiliary sources such as inverters and diesel generators, which have limited power and expensive energy, are also used for the supply of switchgear for auxiliary low voltage. Corresponding reliability indices are calculated for all examples including mean expected annual engagement of diesel generators. The applicability of certain solutions of switchgear for auxiliary low voltage SS EHV/HV, taking into account their reliability, feasibility and cost-effectiveness is analyzed too. In particular, the analysis of applications of direct transformation EHV/LV for supply of switchgear for auxiliary low voltage, for both new and existing SS EHV/HV.

  4. Evaluation of the effectiveness of neurofeedback in the reduction of Posttraumatic stress disorder (PTSD in a patient following high-voltage electric shock with the use of ERPs

    Directory of Open Access Journals (Sweden)

    Anna Chrapusta

    2015-09-01

    Full Text Available Background. The aim of our research was an evaluation of the effectiveness of neurofeedback in reducing the symptoms of Post-trauma stress disorder (PTSD, which had developed as a result of a high-voltage electric burn to the head. Quantitative EEG (QEEG and Event related potentials (ERPs were utilised in the evaluation. Case study. A 21-year-old patient, experienced 4[sup]th[/sup] degree burns to his head as a result of a high-voltage electric burn. The patient was repeatedly operated on and despite the severity of the injuries was to recover. However the patient complained of flashbacks, difficulties with sleeping as well as an inability to continue work in his given profession. Specialist tests were to show the presence within him of PTSD. As a result of which the patient was provided with neurofeedback therapy. The effectiveness of this therapy in the reduction (eradication of the symptoms of PTSD were evaluated through the utilisation of qantitative eeg (Qeeg and event related potentials (ERPs. Results. It was found that in the first examination that ERPs display the most significant deviations from the reference in the two components: (1 the one component is generated within the cingulate cortex. The pattern of its deviation from the norms is similar to that found in a group of OCD patients. In contrast to healthy subjects the component repeats itself twice; (2 the second component is generated in the medial prefrontal cortex. Its pattern (neuromarker is similar to that found in PTSD patients. There is a delay in the late part of the component, which probably reflects the flashbacks. In the second examination, after neurofeedback training, the ERPs were similar to the norm. The patient returned to work. Conclusions. Chronic PTSD developed within the patient as a result of a high-voltage electric burn. The application of a method of therapy (neurofeedback resulted in the withdrawal of the syndrome symptoms. ERPs in a GO/NOGO task can be

  5. Evaluation of the effectiveness of neurofeedback in the reduction of Posttraumatic stress disorder (PTSD) in a patient following high-voltage electric shock with the use of ERPs.

    Science.gov (United States)

    Chrapusta, Anna; Pąchalska, Maria; Wilk-Frańczuk, Magdalena; Starczyńska, Małgorzata; Kropotov, Juri D

    2015-01-01

    The aim of our research was an evaluation of the effectiveness of neurofeedback in reducing the symptoms of Post-trauma stress disorder (PTSD), which had developed as a result of a high-voltage electric burn to the head. Quantitative EEG (QEEG) and Event related potentials (ERPs) were utilised in the evaluation. A 21-year-old patient, experienced 4(th) degree burns to his head as a result of a high-voltage electric burn. The patient was repeatedly operated on and despite the severity of the injuries was to recover. However the patient complained of flashbacks, difficulties with sleeping as well as an inability to continue work in his given profession. Specialist tests were to show the presence within him of PTSD. As a result of which the patient was provided with neurofeedback therapy. The effectiveness of this therapy in the reduction (eradication) of the symptoms of PTSD were evaluated through the utilisation of qantitative eeg (Qeeg) and event related potentials (ERPs). It was found that in the first examination that ERPs display the most significant deviations from the reference in the two components: (1) the one component is generated within the cingulate cortex. The pattern of its deviation from the norms is similar to that found in a group of OCD patients. In contrast to healthy subjects the component repeats itself twice; (2) the second component is generated in the medial prefrontal cortex. Its pattern (neuromarker) is similar to that found in PTSD patients. There is a delay in the late part of the component, which probably reflects the flashbacks. In the second examination, after neurofeedback training, the ERPs were similar to the norm. The patient returned to work. Chronic PTSD developed within the patient as a result of a high-voltage electric burn. The application of a method of therapy (neurofeedback) resulted in the withdrawal of the syndrome symptoms. ERPs in a GO/NOGO task can be used to plan neurofeedback and in the assessment of functional brain

  6. Development of Multi-Functional Voltage Restore System

    Science.gov (United States)

    Suzuki, Satoshi; Ueda, Yoshinobu; Koganezawa, Takehisa; Ogihara, Yoshinori; Mori, Kenjiro; Fukazu, Naoaki

    Recently, with the dawn of the electric deregulation, the installation of distributed generation with power electronics device has grown. This current causes a greater concern of power quality, primarily voltage disturbance for power companies, and their interest in power quality is peaking. Utilities are also interested in keeping their customers satisfied, as well as keeping them on-line and creating more revenue for the utility. As a countermeasure against the above surroundings, a variety type of devices based on power electronics has been developed to protect customers' load from power line voltage disturbance. One of them is the series type voltage restore. The series device is an active device, designed to provide a pure sinusoidal load voltage at all times, correcting voltage disturbance. Series type device compensates for voltage anomalies by inserting the ‘missing’ voltage onto the line through insertion transformer and inverter. This paper shows the setting guideline of target level to compensate voltage disturbance, that is, voltage dip, voltage harmonics, voltage imbalance and voltage flicker, and the design approach of the prototype of series voltage restores to accomplish the required compensation level. The prototype system gives satisfactory compensation performance through evaluation tests, which confirm the validity and effectiveness of the system.

  7. Investigation of voltage swell mitigation using STATCOM

    International Nuclear Information System (INIS)

    Razak, N A Abdul; Jaafar, S; Hussain, I S

    2013-01-01

    STATCOM is one of the best applications of a self commutated FACTS device to control power quality problems in the distribution system. This project proposed a STATCOM model with voltage control mechanism. DQ transformation was implemented in the controller system to achieve better estimation. Then, the model was used to investigate and analyse voltage swell problem in distribution system. The simulation results show that voltage swell could contaminate distribution network with unwanted harmonic frequencies. Negative sequence frequencies give harmful effects to the network. System connected with proposed STATCOM model illustrates that it could mitigate this problems efficiently.

  8. Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

    Energy Technology Data Exchange (ETDEWEB)

    Tiskumara, R. [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529 (United States); Joshi, R. P., E-mail: ravi.joshi@ttu.edu; Mauch, D.; Dickens, J. C.; Neuber, A. A. [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2015-09-07

    A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted up to applied fields as high as ∼275 kV/cm.

  9. A study of the effect on human mesenchymal stem cells of an atmospheric pressure plasma source driven by different voltage waveforms

    Science.gov (United States)

    Laurita, R.; Alviano, F.; Marchionni, C.; Abruzzo, P. M.; Bolotta, A.; Bonsi, L.; Colombo, V.; Gherardi, M.; Liguori, A.; Ricci, F.; Rossi, M.; Stancampiano, A.; Tazzari, P. L.; Marini, M.

    2016-09-01

    The effect of an atmospheric pressure non-equilibrium plasma on human mesenchymal stem cells was investigated. A dielectric barrier discharge non-equilibrium plasma source driven by two different high-voltage pulsed generators was used and cell survival, senescence, proliferation, and differentiation were evaluated. Cells deprived of the culture medium and treated with nanosecond pulsed plasma showed a higher mortality rate, while higher survival and retention of proliferation were observed in cells treated with microsecond pulsed plasma in the presence of the culture medium. While a few treated cells showed the hallmarks of senescence, unexpected delayed apoptosis ensued in cells exposed to plasma-treated medium. The plasma treatment did not change the expression of OCT4, a marker of mesenchymal stem cell differentiation.

  10. Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

    Science.gov (United States)

    Jain, Raj K.; Flood, Dennis J.

    1990-01-01

    Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

  11. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

    Science.gov (United States)

    Zaidi, Z. H.; Lee, K. B.; Roberts, J. W.; Guiney, I.; Qian, H.; Jiang, S.; Cheong, J. S.; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, P. R.; Houston, P. A.

    2018-05-01

    In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

  12. EPG waveform library for Graphocephala atropunctata (Hemiptera: Cicadellidae): Effect of adhesive, input resistor, and voltage levels on waveform appearance and stylet probing behaviors.

    Science.gov (United States)

    Cervantes, Felix A; Backus, Elaine A

    2018-05-31

    Blue-green sharpshooter, Graphocephala atropunctata, is a native California vector of Xylella fastidiosa (Xf), a foregut-borne bacterium that is the causal agent of Pierce's disease in grapevines. A 3rd-generation, AC-DC electropenetrograph (EPG monitor) was used to record stylet probing and ingestion behaviors of adult G. atropunctata on healthy grapevines. This study presents for the first time a complete, updated waveform library for this species, as well as effects of different electropenetrograph settings and adhesives on waveform appearances. Both AC and DC applied signals were used with input resistor (Ri) levels (amplifier sensitivities) of 10 6 , 10 7 , 10 8 and 10 9  Ohms, as well as two type of adhesives, conducting silver paint and handmade silver glue. Waveform description, characterization of electrical origins (R versus emf components), and proposed biological meanings of waveforms are reported, as well as qualitative differences in waveform appearances observed with different electropenetrograph settings and adhesives. In addition, a quantitative study with AC signal, using two applied voltage levels (50 and 200 mV) and two Ri levels (10 7 and 10 9  Ohms) was performed. Intermediate Ri levels 10 7 and 10 8  Ohms provided EPG waveforms with the greatest amount of information, because both levels captured similar proportions of R and emf components, as supported by appearance, clarity, and definition of waveforms. Similarly, use of a gold wire loop plus handmade silver glue provided more definition of waveforms than a gold wire loop plus commercial conducting silver paint. Qualitative/observational evidence suggested that AC applied signal caused fewer aberrant behaviors/waveforms than DC applied signal. In the quantitative study, behavioral components of the sharpshooter X wave were the most affected by changes in Ri and voltage level. Because the X wave probably represents X. fastidiosa inoculation behavior, future studies of X. fastidiosa

  13. Digital voltage discriminator

    International Nuclear Information System (INIS)

    Zhou Zhicheng

    1992-01-01

    A digital voltage discriminator is described, which is synthesized by digital comparator and ADC. The threshold is program controllable with high stability. Digital region of confusion is approximately equal to 1.5 LSB. This discriminator has a single channel analyzer function model with channel width of 1.5 LSB

  14. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  15. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  16. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

  17. Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium

    International Nuclear Information System (INIS)

    Zhu, Meiping; Yi, Kui; Arhilger, Detlef; Qi, Hongji; Shao, Jianda

    2013-01-01

    HfO 2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO 2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO 2 films at 1064 nm and 532 nm are dominated by the nodular-defect density in coatings, while the 355 nm LIDT is dominated by the film absorption. HfO 2 films with higher 1064 nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100 V. - Highlights: • HfO 2 films are evaporated with different Advanced Plasma Source (APS) bias voltages. • Properties of HfO 2 films are sensitive to APS bias voltage. • With a bias voltage of 100 V, HfO 2 coatings without any stress can be achieved. • Higher 1064 nm laser induced damage threshold is achieved at a bias voltage of 100 V

  18. Offshore wind power plants with VSC-HVDC transmission : Grid code compliance optimization and the effect on high voltage ac transmission system

    NARCIS (Netherlands)

    Ndreko, M.

    2017-01-01

    The development of large offshore wind power generation in the North Sea has been significantly accelerated in the last years. The large distance from shore in combination with the need for large transmission capacity has raised the interest for the voltage source converter high voltage direct

  19. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage p....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...... problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults...

  20. Voltage generators of high voltage high power accelerators

    International Nuclear Information System (INIS)

    Svinin, M.P.

    1981-01-01

    High voltage electron accelerators are widely used in modern radiation installations for industrial purposes. In the near future further increasing of their power may be effected, which enables to raise the efficiency of the radiation processes known and to master new power-consuming production in industry. Improvement of HV generators by increasing their power and efficiency is one of many scientific and engineering aspects the successful solution of which provides further development of these accelerators and their technical parameters. The subject is discussed in detail. (author)

  1. Fiber-optic voltage measuring system

    Science.gov (United States)

    Ye, Miaoyuan; Nie, De-Xin; Li, Yan; Peng, Yu; Lin, Qi-Qing; Wang, Jing-Gang

    1993-09-01

    A new fibre optic voltage measuring system has been developed based on the electrooptic effect of bismuth germanium oxide (Bi4Ge3O12)crystal. It uses the LED as the light source. The light beam emitted from the light source is transmitted to the sensor through the optic fibre and the intensity of the output beam is changed by the applied voltage. This optic signal is transmitted to the PIN detector and converted to an electric signal which is processed by the electronic circuit and 8098 single chip microcomputer the output voltage signal obtained is directly proportional to the applied voltage. This paper describes the principle the configuration and the performance parameters of the system. Test results are evaluated and discussed.

  2. A nanoscale piezoelectric transformer for low-voltage transistors.

    Science.gov (United States)

    Agarwal, Sapan; Yablonovitch, Eli

    2014-11-12

    A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

  3. Voltage regulation in distribution networks with distributed generation

    Science.gov (United States)

    Blažič, B.; Uljanić, B.; Papič, I.

    2012-11-01

    The paper deals with the topic of voltage regulation in distribution networks with relatively high distributed energy resources (DER) penetration. The problem of voltage rise is described and different options for voltage regulation are given. The influence of DER on voltage profile and the effectiveness of the investigated solutions are evaluated by means of simulation in DIgSILENT. The simulated network is an actual distribution network in Slovenia with a relatively high penetration of distributed generation. Recommendations for voltage control in networks with DER penetration are given at the end.

  4. Investigation of CeO2 Buffer Layer Effects on the Voltage Response of YBCO Transition-Edge Bolometers

    DEFF Research Database (Denmark)

    Mohajeri, Roya; Nazifi, Rana; Wulff, Anders Christian

    2016-01-01

    The effect on the thermal parameters of superconducting transition-edge bolometers produced on a single crystalline SrTiO3 (STO) substrate with and without a CeO2 buffer layer was investigated. Metal-organic deposition was used to deposit the 20-nm CeO2 buffer layer, whereas RF magnetron sputtering...

  5. Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field-Effect Transistors

    NARCIS (Netherlands)

    Mathijssen, Simon G. J.; Spijkman, Mark-Jan; Andringa, Anne-Marije; van Hal, Paul A.; McCulloch, Iain; Kemerink, Martijn; Janssen, Rene A. J.; de Leeuw, Dago M.

    2010-01-01

    The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate

  6. Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

    Science.gov (United States)

    Cheng-Yin Wang; Canek Fuentes-Hernandez; Jen-Chieh Liu; Amir Dindar; Sangmoo Choi; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen

    2015-01-01

    We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/ Al2O3 and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal−glycerol (CNC/glycerol...

  7. Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Manis-Levy, Hadar; Mintz, Moshe H.; Livneh, Tsachi; Zukerman Ido; Raveh, Avi

    2014-01-01

    The effect of radio-frequency (RF) or low-frequency (LF) bias voltage on the formation of amorphous hydrogenated carbon (a-C:H) films was studied on silicon substrates with a low methane (CH 4 ) concentration (2–10 vol.%) in CH 4 +Ar mixtures. The bias substrate was applied either by RF (13.56 MHz) or by LF (150 kHz) power supply. The highest hardness values (∼18–22 GPa) with lower hydrogen content in the films (∼20 at.%) deposited at 10 vol.% CH 4 , was achieved by using the RF bias. However, the films deposited using the LF bias, under similar RF plasma generation power and CH 4 concentration (50 W and 10 vol.%, respectively), displayed lower hardness (∼6–12 GPa) with high hydrogen content (∼40 at.%). The structures analyzed by Fourier Transform Infrared (FTIR) and Raman scattering measurements provide an indication of trans-polyacetylene structure formation. However, its excessive formation in the films deposited by the LF bias method is consistent with its higher bonded hydrogen concentration and low level of hardness, as compared to the film prepared by the RF bias method. It was found that the effect of RF bias on the film structure and properties is stronger than the effect of the low-frequency (LF) bias under identical radio-frequency (RF) powered electrode and identical PECVD (plasma enhanced chemical vapor deposition) system configuration. (plasma technology)

  8. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.; Abdelghany, Mohamed A.; Elsayed, Mohannad Yomn; Elshurafa, Amro M; Salama, Khaled N.

    2014-01-01

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  9. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  10. Vivitron 1995, transient voltage simulation, high voltage insulator tests, electric field calculation

    International Nuclear Information System (INIS)

    Frick, G.; Osswald, F.; Heusch, B.

    1996-01-01

    Preliminary investigations showed clearly that, because of the discrete electrode structure of the Vivitron, important overvoltage leading to insulator damage can appear in case of a spark. The first high voltage tests showed damage connected with such events. This fact leads to a severe voltage limitation. This work describes, at first, studies made to understand the effects of transients and the associated over-voltage appearing in the Vivitron. Then we present the high voltage tests made with full size Vivitron components using the CN 6 MV machine as a pilot machine. Extensive field calculations were made. These involve simulations of static stresses and transient overvoltages, on insulating boards and electrodes. This work gave us the solutions for arrangements and modifications in the machine. After application, the Vivitron runs now without any sparks and damage at 20 MV. In the same manner, we tested column insulators of a new design and so we will find out how to get to higher voltages. Electric field calculation around the tie bars connecting the discrete electrodes together showed field enhancements when the voltages applied on the discrete electrodes are not equally distributed. This fact is one of the sources of discharges and voltage limitations. A scenario of a spark event is described and indications are given how to proceed towards higher voltages, in the 30 MV range. (orig.)

  11. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  12. Increased voltage photovoltaic cell

    Science.gov (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  13. Simulation of the Process of Arc Energy-Effect in High Voltage Auto-Expansion SF6 Circuit Breaker

    International Nuclear Information System (INIS)

    Rong Mingzhe; Yang Qian; Fan Chunduo

    2005-01-01

    A new magnetic hydro-dynamics (MHD) model of arc in H.V. auto-expansion SF 6 circuit breaker that takes into consideration nozzle ablation due to both radiation and thermal conduction is presented in this paper. The effect of PTFE (polytetrafluorethylene) vapor is considered in the mass, momentum and energy conservation equations of the constructed model. Then, the gas flow fields with and without conduction considered are simulated. By comparing the aforementioned two results, it is indicated that the arc's maximal temperature with conduction considered is 90 percent of that without considering conduction

  14. Regression Analysis of the Effect of Bias Voltage on Nano- and Macrotribological Properties of Diamond-Like Carbon Films Deposited by a Filtered Cathodic Vacuum Arc Ion-Plating Method

    Directory of Open Access Journals (Sweden)

    Shojiro Miyake

    2014-01-01

    Full Text Available Diamond-like carbon (DLC films are deposited by bend filtered cathodic vacuum arc (FCVA technique with DC and pulsed bias voltage. The effects of varying bias voltage on nanoindentation and nanowear properties were evaluated by atomic force microscopy. DLC films deposited with DC bias voltage of −50 V exhibited the greatest hardness at approximately 50 GPa, a low modulus of dissipation, low elastic modulus to nanoindentation hardness ratio, and high nanowear resistance. Nanoindentation hardness was positively correlated with the Raman peak ratio Id/Ig, whereas wear depth was negatively correlated with this ratio. These nanotribological properties highly depend on the films’ nanostructures. The tribological properties of the FCVA-DLC films were also investigated using a ball-on-disk test. The average friction coefficient of DLC films deposited with DC bias voltage was lower than that of DLC films deposited with pulse bias voltage. The friction coefficient calculated from the ball-on-disk test was correlated with the nanoindentation hardness in dry conditions. However, under boundary lubrication conditions, the friction coefficient and specific wear rate had little correlation with nanoindentation hardness, and wear behavior seemed to be influenced by other factors such as adhesion strength between the film and substrate.

  15. Steric effects in the dynamics of electrolytes at large applied voltages. II. Modified Poisson-Nernst-Planck equations.

    Science.gov (United States)

    Kilic, Mustafa Sabri; Bazant, Martin Z; Ajdari, Armand

    2007-02-01

    In situations involving large potentials or surface charges, the Poisson-Boltzman (PB) equation has shortcomings because it neglects ion-ion interactions and steric effects. This has been widely recognized by the electrochemistry community, leading to the development of various alternative models resulting in different sets "modified PB equations," which have had at least qualitative success in predicting equilibrium ion distributions. On the other hand, the literature is scarce in terms of descriptions of concentration dynamics in these regimes. Here, adapting strategies developed to modify the PB equation, we propose a simple modification of the widely used Poisson-Nernst-Planck (PNP) equations for ionic transport, which at least qualitatively accounts for steric effects. We analyze numerical solutions of these modified PNP equations on the model problem of the charging of a simple electrolyte cell, and compare the outcome to that of the standard PNP equations. Finally, we repeat the asymptotic analysis of Bazant, Thornton, and Ajdari [Phys. Rev. E 70, 021506 (2004)] for this new system of equations to further document the interest and limits of validity of the simpler equivalent electrical circuit models introduced in Part I [Kilic, Bazant, and Ajdari, Phys. Rev. E 75, 021502 (2007)] for such problems.

  16. THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

    Directory of Open Access Journals (Sweden)

    Peter Hornak

    2017-12-01

    Full Text Available Tungsten carbide (WC/C layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT, indentation modulus (EIT and coefficient of friction (COF values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.

  17. The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells

    International Nuclear Information System (INIS)

    Islam, S. M. Z.; Gayen, Taposh; Tint, Naing; Alfano, Robert; Shi, Lingyan; Seredych, Mykola; Bandosz, Teresa J.

    2014-01-01

    The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2 wt. % graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450 °C showing conversion of ∼10.60% under a tungsten lamp (12.1 mW/cm 2 ) are reported here, while using potassium iodide as an electrolyte. The output photocurrent, I (μA) with input power, P (mW/cm 2 ) is found to be superlinear, showing a relation of I = P n , where n = 1.4.

  18. Preparation Nano-Structure Polytetrafluoroethylene (PTFE Functional Film on the Cellulose Insulation Polymer and Its Effect on the Breakdown Voltage and Hydrophobicity Properties

    Directory of Open Access Journals (Sweden)

    Jian Hao

    2018-05-01

    Full Text Available Cellulose insulation polymer is an important component of oil-paper insulation, which is widely used in power transformer. The weight of the cellulose insulation polymer materials is as high as tens of tons in the larger converter transformer. Excellent performance of oil-paper insulation is very important for ensuring the safe operation of larger converter transformer. An effective way to improve the insulation and the physicochemical property of the oil impregnated insulation pressboard/paper is currently a popular research topic. In this paper, the polytetrafluoroethylene (PTFE functional film was coated on the cellulose insulation pressboard by radio frequency (RF magnetron sputtering to improve its breakdown voltage and the hydrophobicity properties. X-ray photoelectron spectroscopy (XPS results show that the nano-structure PTFE functional film was successfully fabricated on the cellulose insulation pressboard surface. The scanning electron microscopy (SEM and X-ray diffraction (XRD present that the nanoscale size PTFE particles were attached to the pressboard surface and it exists in the amorphous form. Atomic force microscopy (AFM shows that the sputtered pressboard surface is still rough. The rough PTFE functional film and the reduction of the hydrophilic hydroxyl of the surface due to the shielding effect of PTFE improve the breakdown and the hydrophobicity properties of the cellulose insulation pressboard obviously. This paper provides an innovative way to improve the performance of the cellulose insulation polymer.

  19. Suppressing voltage transients in high voltage power supplies

    International Nuclear Information System (INIS)

    Lickel, K.F.; Stonebank, R.

    1979-01-01

    A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

  20. Benchmarking of Voltage Sag Generators

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

    2012-01-01

    The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...

  1. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  2. A summary of the low angle x-ray atomic scattering factors which have been measured by the critical voltage effect in High Energy Electron Diffraction (HEED)

    International Nuclear Information System (INIS)

    Fox, A.G.; Fisher, R.M.

    1987-08-01

    A tabulated summary of all the accurate (/approximately/0.1%) low-angle x-ray atomic scattering (form) factors which have been determined by the systematic critical voltage technique in HEED is presented. For low atomic number elements (Z/approx lt/40) the low angle form factors can be significantly different to best free atom values, and so the best band structure calculated and/or x-ray measured form factors consistent with the critical voltage measurements are also indicated. At intermediate atomic numbers Z≅40→50 only the very low-angle form factors appear to be different to the best free atom values, and even then only by a small amount. For heavy elements (Z/approx lt/70) the best free atom form factors appear to agree very closely with the critical voltage measured values and so, in this case, critical voltage measurements give very accurate measurements of Debye-Waller factors. 48 refs

  3. Modeling and simulation of dynamic voltage restorer in power system

    International Nuclear Information System (INIS)

    Abdel Aziz, M.A.A.M.

    2012-01-01

    There are many loads subjected to several Power Quality Problems such as voltage sags/swells, unbalance, harmonics distortion, and short interruption. These loads encompass a wide range of equipment which are very sensitive to voltage disturbances. The Dynamic Voltage Restorer (DVR) has recently been introduced to protect sensitive loads from voltage sags and other voltage disturbances in addition to this, it mitigates current harmonics distortion. It is a series connected power electronic based device. It is considered as one of the most efficient and effective solutions. Its appeal includes smaller size and fast dynamic response to disturbances. This work describes a proposal of the DVR to improve power quality distribution (medium voltage) system. The control of the compensation voltage and harmonics cancellation in the DVR is based on Adaptive Noise Canceling (ANC) technique. Simulation results carried out by PSCAD/EMTDC to investigate the performance of the proposed method.

  4. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  5. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

  6. Effect of negative bias voltage on CrN films deposited by arc ion plating. I. Macroparticles filtration and film-growth characteristics

    International Nuclear Information System (INIS)

    Wang Qimin; Kim, Kwang Ho

    2008-01-01

    Chromium nitride (CrN) films were deposited on Si wafers by arc ion plating (AIP) at various negative bias voltages and several groups of N 2 /Ar gas flux ratios and chamber gas pressures. The authors systematically investigated the influence of negative bias voltage on the synthesis, composition, microstructure, and properties of the AIP CrN films. In this part (Part I), the investigations were mainly focused on the macroparticle distributions and film-growth characteristics. The results showed that macroparticle densities on the film surfaces decreased greatly by applying negative bias voltage, which can be affected by partial pressure of N 2 and Ar gases. From the statistical analysis of the experimental results, they proposed a new hybrid mechanism of ion bombardment and electrical repulsion. Also, the growth of the AIP CrN films was greatly altered by applying negative bias voltage. By increasing the bias voltage, the film surfaces became much smoother and the films evolved from apparent columnar microstructures to an equiaxed microstructure. The impinging high-energy Cr ions accelerated by negative bias voltages were deemed the inherent reason for the evolution of growth characteristics

  7. Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects.

    Science.gov (United States)

    Aghamohammadi, Mahdieh; Rödel, Reinhold; Zschieschang, Ute; Ocal, Carmen; Boschker, Hans; Weitz, R Thomas; Barrena, Esther; Klauk, Hagen

    2015-10-21

    The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor.

  8. Control and Testing of a Dynamic Voltage Restorer (DVR) at Medium Voltage Level

    DEFF Research Database (Denmark)

    Nielsen, John Godsk; Newman, Michael; Nielsen, Hans Ove

    2004-01-01

    power sensitive loads from voltage sags. This paper reports practical test results obtained on a medium voltage (10 kV) level using a DVR at a Distribution test facility in Kyndby, Denmark. The DVR was designed to protect a 400-kVA load from a 0.5-p.u. maximum voltage sag. The reported DVR verifies......The dynamic voltage restorer (DVR) has become popular as a cost effective solution for the protection of sensitive loads from voltage sags. Implementations of the DVR have been proposed at both a low voltage (LV) level, as well as a medium voltage (MV) level; and give an opportunity to protect high...... the use of a feed-forward and feed-back technique of the controller and it obtains both good transient and steady state responses. The effect of the DVR on the system is experimentally investigated under both faulted and non-faulted system states, for a variety of linear and non-linear loads. Variable...

  9. CONTRIBUTIONS OF INTRACELLULAR IONS TO Kv CHANNEL VOLTAGE SENSOR DYNAMICS.

    Directory of Open Access Journals (Sweden)

    Samuel eGoodchild

    2012-06-01

    Full Text Available Voltage sensing domains of Kv channels control ionic conductance through coupling of the movement of charged residues in the S4 segment to conformational changes at the cytoplasmic region of the pore domain, that allow K+ ions to flow. Conformational transitions within the voltage sensing domain caused by changes in the applied voltage across the membrane field are coupled to the conducting pore region and the gating of ionic conductance. However, several other factors not directly linked to the voltage dependent movement of charged residues within the voltage sensor impact the dynamics of the voltage sensor, such as inactivation, ionic conductance, intracellular ion identity and block of the channel by intracellular ligands. The effect of intracellular ions on voltage sensor dynamics is of importance in the interpretation of gating current measurements and the physiology of pore/voltage sensor coupling. There is a significant amount of variability in the reported kinetics of voltage sensor deactivation kinetics of Kv channels attributed to different mechanisms such as open state stabilization, immobilization and relaxation processes of the voltage sensor. Here we separate these factors and focus on the causal role that intracellular ions can play in allosterically modulating the dynamics of Kv voltage sensor deactivation kinetics. These considerations are of critical importance in understanding the molecular determinants of the complete channel gating cycle from activation to deactivation.

  10. Sensing voltage across lipid membranes

    Science.gov (United States)

    Swartz, Kenton J.

    2009-01-01

    The detection of electrical potentials across lipid bilayers by specialized membrane proteins is required for many fundamental cellular processes such as the generation and propagation of nerve impulses. These membrane proteins possess modular voltage-sensing domains, a notable example being the S1-S4 domains of voltage-activated ion channels. Ground-breaking structural studies on these domains explain how voltage sensors are designed and reveal important interactions with the surrounding lipid membrane. Although further structures are needed to fully understand the conformational changes that occur during voltage sensing, the available data help to frame several key concepts that are fundamental to the mechanism of voltage sensing. PMID:19092925

  11. Effects of Battery Voltage in Fluorescent Lamps for Use in Photovoltaic Systems; Efectos de la Tension de Bateria en Lamparas Fluorescentes para Uso en Instalaciones Fotovoltaicas

    Energy Technology Data Exchange (ETDEWEB)

    Garcia Rosillo, F; Egido Aguilera, M A

    2008-07-01

    It is known the importance of lighting systems with fluorescent lamps and electronic ballast in isolated photo-voltaic systems. The positive characteristics of the fluorescent lamps sometimes are not developed in full, due to the incorrect choice of ballast The failure of a lamp in the photovoltaic system can have great significance in the subjective perception of the user for the complete system. The purpose of this study is to analyze the behavior of two very similar fluorescent lamps, fed with different electronic ballasts, showing the great influence of the electronic ballast topology in the operation of the fluorescent lamp. In particular, this work aims to analyze the effect of variations of the input voltage to the ballast in the electrical and luminous characteristics of the lamp, as well as to understand the influence of electrical parameters in the life time of the fluorescent lamp. It is also analyzed the operating temperature of the electrode and the time necessary for electrode cooling after switching off the lamp. (Author) 23 refs.

  12. Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si

    International Nuclear Information System (INIS)

    Horiuchi, Takeshi; Takahashi, Mitsue; Li, Qiu-Hong; Wang, Shouyu; Sakai, Shigeki

    2010-01-01

    Oxynitrided Si (SiON) surfaces show smaller subthreshold swings than do directly nitrided Si (SiN) surfaces when used in ferroelectric-gate field-effect transistors (FeFETs) having the following stacked-gate structure: Pt/SrBi 2 Ta 2 O 9 (SBT)/HfO 2 /Si. SiON/Si substrates for FeFETs were prepared by rapid thermal oxidation (RTO) in O 2 at 1000 °C and subsequent rapid thermal nitridation (RTN) in NH 3 at various temperatures in the range 950–1150 °C. The electrical properties of the Pt/SBT/HfO 2 /SiON/Si FeFET were compared with those of reference FETs, i.e. Pt/SBT/HfO 2 gate stacks formed on Si substrates subjected to various treatments: SiN x /Si formed by RTN, SiO 2 /Si formed by RTO and untreated Si. The Pt/SBT/HfO 2 /SiON/Si FeFET had a larger memory window than all the other reference FeFETs, particularly at low operation voltages when the RTN temperature was 1050 °C

  13. Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films

    Directory of Open Access Journals (Sweden)

    Jian-Yang Lin

    2014-01-01

    Full Text Available SiO2 or Cu-doped SiO2 (Cu:SiO2 insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS at room temperature. The experimental results show that the room-temperature CVS treatment can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cells. After the CVS, the current conduction mechanisms in the high resistance state during the set process of the Cu/Cu:SiO2/W cell can be changed from Ohm’s law and the space charge limited conduction to Ohm’s law, the Schottky emission, and the space charge limited conduction. Presumably, it is due to the breakage of the conduction filaments during the CVS treatment that the conduction electrons cannot go back to the back electrode smoothly.

  14. Effect of angiotensin II on voltage-gated sodium currents in aortic baroreceptor neurons and arterial baroreflex sensitivity in heart failure rats.

    Science.gov (United States)

    Zhang, Dongze; Liu, Jinxu; Zheng, Hong; Tu, Huiyin; Muelleman, Robert L; Li, Yu-Long

    2015-07-01

    Impairment of arterial baroreflex sensitivity is associated with mortality in patients with chronic heart failure (CHF). Elevation of plasma angiotension II (Ang II) contributes to arterial baroreflex dysfunction in CHF. A reduced number of voltage-gated sodium (Nav) channels in aortic baroreceptor neurons are involved in CHF-blunted arterial baroreflex. In this study, we investigated acute effect of Ang II on Nav currents in the aortic baroreceptor neuron and on arterial baroreflex in sham and coronary artery ligation-induced CHF rats. Using Ang II I radioimmunoassay, real-time reverse transcription-PCR and western blot, we found that Ang II levels, and mRNA and protein expression of angiotension II type 1 receptor in nodose ganglia from CHF rats were higher than that from sham rats. Local microinjection of Ang II (0.2  nmol) into the nodose ganglia decreased the arterial baroreflex sensitivity in sham rats, whereas losartan (1  nmol, an angiotension II type 1 receptor antagonist) improved the arterial baroreflex sensitivity in CHF rats. Data from patch-clamp recording showed that Ang II (100  nmol/l) acutely inhibited Nav currents in the aortic baroreceptor neurons from sham and CHF rats. In particular, inhibitory effect of Ang II on Nav currents in the aortic baroreceptor neurons was larger in CHF rats than that in sham rats. Losartan (1  μmol/l) totally abolished the inhibitory effect of Ang II on Nav currents in sham and CHF aortic baroreceptor neurons. These results suggest that elevation of endogenous Ang II in the nodose ganglia contributes to impairment of the arterial baroreflex function in CHF rats through inhibiting Nav channels.

  15. Effect of high-voltage electrical stimulation on the albumin and histamine serum concentrations, edema, and pain in acute joint inflammation of rats

    Directory of Open Access Journals (Sweden)

    Maria C. Sandoval

    2015-04-01

    Full Text Available BACKGROUND: The mechanism by which high-voltage electrical stimulation (HVPC acts on edema reduction is unknown. OBJECTIVE: To assess the effect of HVPC with negative polarity (- applied to the ankle of rats with acute joint inflammation. METHOD: Sixty-four rats were divided into four groups (n=16: inflamed+HVPC(-, 0.03 mL application of ι-carrageenan (3% to the tibiotarsal joint plus HVPC(-; inflamed+HVPC placebo, carrageenan application and HVPC placebo; normal+HVPC(-, HVPC application(-; and normal control, no intervention. The HVPC(- 100 Hz at a submotor level was applied daily for 45 min on three consecutive days. The variables were pain, hind-foot volume, and serum histamine and albumin assessed before and during the 48 hours following inflammation. The variables were compared using the t test, one-way ANOVA, nested ANOVA for repeated measures, and the post hoc Bonferroni test. Analysis of covariance was applied to adjust the effects of HVPC(- by measurements of pain, inflammation, albumin, and histamine at 24 h, and the final weight was compared to the other groups. The significance level was set at p0.05. Albumin was reduced in the groups that received the intervention, but there was no differences between them. There was only a 24 hour increase in histamine with the normal+HVPC(- (p=0.0001 and inflamed+HVPC placebo groups (p=0.01 compared to the normal control group. CONCLUSIONS: The results of the present study suggest that HVPC(- with the parameters employed did not reduce pain or edema and did not change serum albumin or histamine levels,, which indicates the inability of this resource to have a positive effect when treating treat acute joint inflammation.

  16. Voltage Dependence of a Neuromodulator-Activated Ionic Current123

    Science.gov (United States)

    2016-01-01

    Abstract The neuromodulatory inward current (IMI) generated by crab Cancer borealis stomatogastric ganglion neurons is an inward current whose voltage dependence has been shown to be crucial in the activation of oscillatory activity of the pyloric network of this system. It has been previously shown that IMI loses its voltage dependence in conditions of low extracellular calcium, but that this effect appears to be regulated by intracellular calmodulin. Voltage dependence is only rarely regulated by intracellular signaling mechanisms. Here we address the hypothesis that the voltage dependence of IMI is mediated by intracellular signaling pathways activated by extracellular calcium. We demonstrate that calmodulin inhibitors and a ryanodine antagonist can reduce IMI voltage dependence in normal Ca2+, but that, in conditions of low Ca2+, calmodulin activators do not restore IMI voltage dependence. Further, we show evidence that CaMKII alters IMI voltage dependence. These results suggest that calmodulin is necessary but not sufficient for IMI voltage dependence. We therefore hypothesize that the Ca2+/calmodulin requirement for IMI voltage dependence is due to an active sensing of extracellular calcium by a GPCR family calcium-sensing receptor (CaSR) and that the reduction in IMI voltage dependence by a calmodulin inhibitor is due to CaSR endocytosis. Supporting this, preincubation with an endocytosis inhibitor prevented W7 (N-(6-aminohexyl)-5-chloro-1-naphthalenesulfonamide hydrochloride)-induced loss of IMI voltage dependence, and a CaSR antagonist reduced IMI voltage dependence. Additionally, myosin light chain kinase, which is known to act downstream of the CaSR, seems to play a role in regulating IMI voltage dependence. Finally, a Gβγ-subunit inhibitor also affects IMI voltage dependence, in support of the hypothesis that this process is regulated by a G-protein-coupled CaSR. PMID:27257619

  17. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  18. Voltage scheduling for low power/energy

    Science.gov (United States)

    Manzak, Ali

    2001-07-01

    Power considerations have become an increasingly dominant factor in the design of both portable and desk-top systems. An effective way to reduce power consumption is to lower the supply voltage since voltage is quadratically related to power. This dissertation considers the problem of lowering the supply voltage at (i) the system level and at (ii) the behavioral level. At the system level, the voltage of the variable voltage processor is dynamically changed with the work load. Processors with limited sized buffers as well as those with very large buffers are considered. Given the task arrival times, deadline times, execution times, periods and switching activities, task scheduling algorithms that minimize energy or peak power are developed for the processors equipped with very large buffers. A relation between the operating voltages of the tasks for minimum energy/power is determined using the Lagrange multiplier method, and an iterative algorithm that utilizes this relation is developed. Experimental results show that the voltage assignment obtained by the proposed algorithm is very close (0.1% error) to that of the optimal energy assignment and the optimal peak power (1% error) assignment. Next, on-line and off-fine minimum energy task scheduling algorithms are developed for processors with limited sized buffers. These algorithms have polynomial time complexity and present optimal (off-line) and close-to-optimal (on-line) solutions. A procedure to calculate the minimum buffer size given information about the size of the task (maximum, minimum), execution time (best case, worst case) and deadlines is also presented. At the behavioral level, resources operating at multiple voltages are used to minimize power while maintaining the throughput. Such a scheme has the advantage of allowing modules on the critical paths to be assigned to the highest voltage levels (thus meeting the required timing constraints) while allowing modules on non-critical paths to be assigned

  19. Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

    2014-01-01

    The electrical characterization of HfO 2 /ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO 2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO 2 /ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

  20. The Effect of Bias Voltage and Gas Pressure on the Structure, Adhesion and Wear Behavior of Diamond Like Carbon (DLC Coatings With Si Interlayers

    Directory of Open Access Journals (Sweden)

    Liam Ward

    2014-04-01

    Full Text Available In this study diamond like carbon (DLC coatings with Si interlayers were deposited on 316L stainless steel with varying gas pressure and substrate bias voltage using plasma enhanced chemical vapor deposition (PECVD technology. Coating and interlayer thickness values were determined using X-ray photoelectron spectroscopy (XPS which also revealed the presence of a gradient layer at the coating substrate interface. Coatings were evaluated in terms of the hardness, elastic modulus, wear behavior and adhesion. Deposition rate generally increased with increasing bias voltage and increasing gas pressure. At low working gas pressures, hardness and modulus of elasticity increased with increasing bias voltage. Reduced hardness and modulus of elasticity were observed at higher gas pressures. Increased adhesion was generally observed at lower bias voltages and higher gas pressures. All DLC coatings significantly improved the overall wear resistance of the base material. Lower wear rates were observed for coatings deposited with lower bias voltages. For coatings that showed wear tracks considerably deeper than the coating thickness but without spallation, the wear behavior was largely attributed to deformation of both the coating and substrate with some cracks at the wear track edges. This suggests that coatings deposited under certain conditions can exhibit ultra high flexible properties.

  1. Inhibition of T-Type Voltage Sensitive Calcium Channel Reduces Load-Induced OA in Mice and Suppresses the Catabolic Effect of Bone Mechanical Stress on Chondrocytes.

    Directory of Open Access Journals (Sweden)

    Padma P Srinivasan

    Full Text Available Voltage-sensitive calcium channels (VSCC regulate cellular calcium influx, one of the earliest responses to mechanical stimulation in osteoblasts. Here, we postulate that T-type VSCCs play an essential role in bone mechanical response to load and participate in events leading to the pathology of load-induced OA. Repetitive mechanical insult was used to induce OA in Cav3.2 T-VSCC null and wild-type control mouse knees. Osteoblasts (MC3T3-E1 and chondrocytes were treated with a selective T-VSCC inhibitor and subjected to fluid shear stress to determine how blocking of T-VSCCs alters the expression profile of each cell type upon mechanical stimulation. Conditioned-media (CM obtained from static and sheared MC3T3-E1 was used to assess the effect of osteoblast-derived factors on the chondrocyte phenotype. T-VSCC null knees exhibited significantly lower focal articular cartilage damage than age-matched controls. In vitro inhibition of T-VSCC significantly reduced the expression of both early and late mechanoresponsive genes in osteoblasts but had no effect on gene expression in chondrocytes. Furthermore, treatment of chondrocytes with CM obtained from sheared osteoblasts induced expression of markers of hypertrophy in chondrocytes and this was nearly abolished when osteoblasts were pre-treated with the T-VSCC-specific inhibitor. These results indicate that T-VSCC plays a role in signaling events associated with induction of OA and is essential to the release of osteoblast-derived factors that promote an early OA phenotype in chondrocytes. Further, these findings suggest that local inhibition of T-VSCC may serve as a therapy for blocking load-induced bone formation that results in cartilage degeneration.

  2. Effects of trimethoprim-sulfadiazine and detomidine on the function of equine Kv 11.1 channels in a two-electrode voltage-clamp (TEVC) oocyte model.

    Science.gov (United States)

    Trachsel, D S; Tejada, M A; Groesfjeld Christensen, V; Pedersen, P J; Kanters, J K; Buhl, R; Calloe, K; Klaerke, D A

    2018-03-22

    The long QT syndrome (LQTS) is a channelopathy that can lead to severe arrhythmia and sudden cardiac death. Pharmacologically induced LQTS is caused by interaction between drugs and potassium channels, especially the K v 11.1 channel. Due to such interactions, numerous drugs have been withdrawn from the market or are administered with precautions in human medicine. However, some compounds, such as trimethoprim-sulfonamide combinations are still widely used in veterinarian medicine. Therefore, we investigate the effect of trimethoprim-sulfadiazine (TMS), trimethoprim, sulfadiazine, and detomidine on equine-specific K v 11.1 channels. K v 11.1 channels cloned from equine hearts were heterologously expressed in Xenopus laevis oocytes, and whole cell currents were measured by two-electrode voltage-clamp before and after drug application. TMS blocked equine K v 11.1 current with an IC 50 of 3.74 mm (95% CI: 2.95-4.73 mm) and affected the kinetics of activation and inactivation. Similar was found for trimethoprim but not for sulfadiazine, suggesting the effect is due to trimethoprim. Detomidine did not affect equine K v 11.1 current. Thus, equine K v 11.1 channels are also susceptible to pharmacological block, indicating that some drugs may have the potential to affect repolarization in horse. However, in vivo studies are needed to assess the potential risk of these drugs to induce equine LQTS. © 2018 The Authors. Journal of Veterinary Pharmacology and Therapeutics Published by John Wiley & Sons Ltd.

  3. PLZT light transmittance memory driven with an asymmetric voltage pulse

    International Nuclear Information System (INIS)

    Inoue, Kazuhiko; Morita, Takeshi

    2010-01-01

    PLZT is a ferroelectric electro-optic material, which has been operated with a constant voltage supply to keep a certain optical property. In this study, we propose an optical transmittance memory effect by controlling the domain conditions. The keypoint is to use an asymmetric voltage pulse. In the positive direction, a sufficiently-large voltage is applied to align the polarization directions. After this operation, a relatively small light transmittance is memorized even after removing the electric field. On the other hand, in the negative direction, the amplitude of the voltage is adjusted to the coercive electric field. In this condition, the domain structure is almost the same as the depolarization state. With this voltage supply, the maximum light transmittance can be kept after removing the electric field. Using these voltage operations, the PLZT can obtain two light transmittance states depending on the domain structure. This memory effect should be useful for innovative optical scanners or shutters in the future.

  4. Opposite effects of the S4-S5 linker and PIP2 on voltage-gated channel function: KCNQ1/KCNE1 and other channels

    Directory of Open Access Journals (Sweden)

    Frank S Choveau

    2012-07-01

    Full Text Available Voltage-gated potassium (Kv channels are tetramers, each subunit presenting six transmembrane segments (S1-S6, with each S1-S4 segments forming a voltage-sensing domain (VSD and the four S5-S6 forming both the conduction pathway and its gate. S4 segments control the opening of the intracellular activation gate in response to changes in membrane potential. Crystal structures of several voltage-gated ion channels in combination with biophysical and mutagenesis studies highlighted the critical role of the S4-S5 linker (S4S5L and of the S6 C-terminal part (S6T in the coupling between the VSD and the activation gate. Several mechanisms have been proposed to describe the coupling at a molecular scale. This review summarizes the mechanisms suggested for various voltage-gated ion channels, including a mechanism that we described for KCNQ1, in which S4S5L is acting like a ligand binding to S6T to stabilize the channel in a closed state. As discussed in this review, this mechanism may explain the reverse response to depolarization in HCN-like channels. As opposed to S4S5L, the phosphoinositide, phosphatidylinositol 4,5-bisphosphate (PIP2, stabilizes KCNQ1 channel in an open state. Many other ion channels (not only voltage-gated require PIP2 to function properly, confirming its crucial importance as an ion channel co-factor. This is highlighted in cases in which an altered regulation of ion channels by PIP2 leads to channelopathies, as observed for KCNQ1. This review summarizes the state of the art on the two regulatory mechanisms that are critical for KCNQ1 and other voltage-gated channels function (PIP2 and S4-S5L, and assesses their potential physiological and pathophysiological roles.

  5. Experimental evaluation of voltage unbalance compensation in an islanded microgrid

    DEFF Research Database (Denmark)

    Savaghebi, Mehdi; Guerrero, Josep M.; Jalilian, Alireza

    2011-01-01

    In this paper, a method for voltage unbalance compensation in an islanded microgrid based on the proper control of distributed generators (DGs) interface converter is proposed. In this method, active and reactive power control loops are considered to control the power sharing among the DGs. Also......, a virtual impedance loop and voltage and current proportional-resonant controllers are included. Experimental results show the effectiveness of the proposed method for compensating voltage unbalance to an acceptable level....

  6. High voltage isolation transformer

    Science.gov (United States)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  7. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor

    Science.gov (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  8. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor.

    Science.gov (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  9. Dispersion of breakdown voltage of liquid helium

    International Nuclear Information System (INIS)

    Ishii, Itaru; Noguchi, Takuya

    1978-01-01

    As for the electrical insulation characteristics of liquid helium, the discrepancy among the measured values by each person is very large even in the fundamental DC breakdown voltage in uniform electric field. The dispersion of experimental values obtained in the experiments by the same person is also large. Hereafter, the difference among the mean values obtained by each experimenter will be referred to as ''deviation of mean values'', and the dispersion of measured values around the mean value obtained by the same person as ''deviation around the man value''. The authors have mainly investigated on the latter experimentally. The cryostat was made of stainless steel, and the innermost helium chamber was of 500 mm I.D. and approximately 1200 mm deep. The high voltage electrode was of brass sphere of 25 mm diameter, and the low voltage electrode was of brass plate. The experiment was conducted for liquid helium boiling at 4.2 K and 1 atm, and the breakdown voltage and time lag were measured by applying the approximately square wave impulses of fast rise and long tail, ramp and DC voltages. The cause of the deviation of mean values may be the presence of impurity particles or the effect of electrode shape. As for the deviation around the mean value, the dispersion is large, and its standard deviation may amount to 10 to 20% of the man value. The dispersion is not due to the statistical time lag, but is due to parameters that vary with breakdown. (Wakatsuki, Y.)

  10. Conservation voltage regulation (CVR) applied to energy savings by voltage-adjusting equipment through AMI

    Science.gov (United States)

    Lan, B.-R.; Chang, C.-A.; Huang, P.-Y.; Kuo, C.-H.; Ye, Z.-J.; Shen, B.-C.; Chen, B.-K.

    2017-11-01

    Conservation voltage reduction (CVR) includes peak demand reduction, energy conservation, carbon emission reduction, and electricity bill reduction. This paper analyzes the energy-reduction of Siwei Feeders with applying CVR, which are situated in Penghu region and equipped with smart meters. Furthermore, the applicable voltage reduction range for the feeders will be explored. This study will also investigate how the CVR effect and energy conservation are improved with the voltage control devices integrated. The results of this study can serve as a reference for the Taiwan Power Company to promote and implement voltage reduction and energy conservation techniques. This study is expected to enhance the energy-reduction performance of the Penghu Low Carbon Island Project.

  11. Modelling voltage sag mitigation using dynamic voltage restorer and analyzing power quality issue

    Science.gov (United States)

    Ismail, Nor Laili; Hidzir, Hizrin Dayana Mohd; Thanakodi, Suresh; Nazar, Nazatul Shiema Moh; Ibrahim, Pungut; Ali, Che Ku Muhammad Sabri Che Ku

    2018-02-01

    Power quality problem which are arise due to a fault or a pulsed load can have caused an interruption of critical load. The modern power systems are becoming more sensitive to the quality of the power supplied by the utility company. Voltage sags and swells, flicker, interruptions, harmonic distortion and other distortion to the sinusoidal waveform are the examples of the power quality problems. The most affected due to these problems is industrial customers who use a lot of sensitive equipment. There has suffered a huge loss to these problems. Resulting of broken or damage equipment if voltage sag exceeds the sensitive threshold of the equipment. Thus, device such as Static Synchronous Compensator (STATCOM) and Dynamic Voltage Restorer (DVR) has been created to solve this problem among users. DVR is a custom power device that most effective and efficient. This paper intended to report the DVR operations during voltage sag compensation.

  12. Pulse-voltage fast generator

    International Nuclear Information System (INIS)

    Valeev, R.I.; Nikiforov, M.G.; Kharchenko, A.F.

    1988-01-01

    The design is described and the test results of a four-channel pulse-voltage generator with maximum output voltage 200 kV are presented. The measurement results of generator triggering time depending on the value and polarity of the triggering voltage pulse for different triggering circuits are presented. The tests have shown stable triggering of all four channels of the generator in the range up to 40 % from selfbreakdown voltage. The generator triggering delay in the given range is <25 ns, asynchronism in channel triggering is <±1 ns

  13. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  14. Semisupervised Community Detection by Voltage Drops

    Directory of Open Access Journals (Sweden)

    Min Ji

    2016-01-01

    Full Text Available Many applications show that semisupervised community detection is one of the important topics and has attracted considerable attention in the study of complex network. In this paper, based on notion of voltage drops and discrete potential theory, a simple and fast semisupervised community detection algorithm is proposed. The label propagation through discrete potential transmission is accomplished by using voltage drops. The complexity of the proposal is OV+E for the sparse network with V vertices and E edges. The obtained voltage value of a vertex can be reflected clearly in the relationship between the vertex and community. The experimental results on four real networks and three benchmarks indicate that the proposed algorithm is effective and flexible. Furthermore, this algorithm is easily applied to graph-based machine learning methods.

  15. Temporary over voltages in the high voltage networks

    International Nuclear Information System (INIS)

    Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

    2001-01-01

    The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

  16. Automatic Voltage Control (AVC) System under Uncertainty from Wind Power

    DEFF Research Database (Denmark)

    Qin, Nan; Abildgaard, Hans; Flynn, Damian

    2016-01-01

    An automatic voltage control (AVC) system maintains the voltage profile of a power system in an acceptable range and minimizes the operational cost by coordinating the regulation of controllable components. Typically, all of the parameters in the optimization problem are assumed to be certain...... and constant in the decision making process. However, for high shares of wind power, uncertainty in the decision process due to wind power variability may result in an infeasible AVC solution. This paper proposes a voltage control approach which considers the voltage uncertainty from wind power productions....... The proposed method improves the performance and the robustness of a scenario based approach by estimating the potential voltage variations due to fluctuating wind power production, and introduces a voltage margin to protect the decision against uncertainty for each scenario. The effectiveness of the proposed...

  17. Resonance of magnetization excited by voltage in magnetoelectric heterostructures

    Science.gov (United States)

    Yu, Guoliang; Zhang, Huaiwu; Li, Yuanxun; Li, Jie; Zhang, Dainan; Sun, Nian

    2018-04-01

    Manipulation of magnetization dynamics is critical for spin-based devices. Voltage driven magnetization resonance is promising for realizing low-power information processing systems. Here, we show through Finite Element Method (FEM) simulations that magnetization resonance in nanoscale magnetic elements can be generated by a radio frequency (rf) voltage via the converse magnetoelectric (ME) effect. The magnetization dynamics induced by voltage in a ME heterostructures is simulated by taking into account the magnetoelastic and piezoelectric coupling mechanisms among magnetization, strain and voltage. The frequency of the excited magnetization resonance is equal to the driving rf voltage frequency. The proposed voltage driven magnetization resonance excitation mechanism opens a way toward energy-efficient spin based device applications.

  18. Phosphorus Enrichment as a New Composition in the Solid Electrolyte Interphase of High-Voltage Cathodes and Its Effects on Battery Cycling

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Pengfei; Zheng, Jianming; Kuppan, Saravanan; Li, Qiuyan; Lv, Dongping; Xiao, Jie; Chen, Guoying; Zhang, Jiguang; Wang, Chong M.

    2015-11-10

    Immersion of a solid into liquid often leads to the modification of both the structure and chemistry of surface of the solid, which subsequently affects the chemical and physical properties of the system. For the case of the rechargeable lithium ion battery, such a surface modification is termed as solid electrolyte interphase (SEI) layer, which has been perceived to play critical role for the stable operation of the batteries. However, the structure and chemical composition of SEI layer and its spatial distribution and dependence on the battery operating condition remain unclear. By using aberration corrected scanning transmission electron microscopy coupled with ultra-high sensitive energy dispersive x-ray spectroscopy, we probed the structure and chemistry of SEI layer on several high voltage cathodes. We show that layer-structured cathodes, when cycled at a high cut off voltage, can form a P-rich SEI layer on their surface, which is a direct evidence of Li-salt (LiPF6) decomposition. Our systematical investigations indicate such cathode/Li-salt side reaction shows strong dependence on structure of the cathode materials, operating voltage and temperature, indicating the feasibility of SEI engineering. These findings provide us valuable insights into the complex interface between the high-voltage cathode and the electrolyte.

  19. Study of the effect of Pyrophosphate in low voltage Plasma Electrolytic Oxidation on the corrosion resistance of AZ31B Magnesium alloy

    International Nuclear Information System (INIS)

    Yun, Jae Gon; Kim, Eng Chan; Kim, Ki Hong

    2016-01-01

    In this study, low voltage Plasma Electrolytic Oxidation (PEO) was utilized to eliminate the drawbacks of high voltage PEO such as high cost, dimensional deformation, and porosity. Low voltage PEO produces a thin coating, which leads to low corrosion resistance. In order to solve this problem, 0.1⁓0.6 M pyrophosphates were added to a bath containing 1.4 M NaOH and 0.35 M Na_2SiO_3.PEO at 70V was conducted at 25℃ for 3 minutes. The chemical composition, morphology, and corrosion resistance of the anodized coating were analyzed. The anodized film was composed of MgO, Mg_2SiO_4, and Mg_2O_7P_2. Themorphology of the film showed a inappropriately dense structure and low porosity in the anodized layers. It is found that low voltage Plasma Electrolytic Oxidation in cooperation with phosphating treatment can provide good corrosion protection for the AZ31B magnesium alloy.

  20. Study of the effect of Pyrophosphate in low voltage Plasma Electrolytic Oxidation on the corrosion resistance of AZ31B Magnesium alloy

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Jae Gon; Kim, Eng Chan [Yeungnam University, Gyeongsan (Korea, Republic of); Kim, Ki Hong [Catholic University of Daegu, Gyeongsan (Korea, Republic of)

    2016-01-15

    In this study, low voltage Plasma Electrolytic Oxidation (PEO) was utilized to eliminate the drawbacks of high voltage PEO such as high cost, dimensional deformation, and porosity. Low voltage PEO produces a thin coating, which leads to low corrosion resistance. In order to solve this problem, 0.1⁓0.6 M pyrophosphates were added to a bath containing 1.4 M NaOH and 0.35 M Na{sub 2}SiO{sub 3}.PEO at 70V was conducted at 25℃ for 3 minutes. The chemical composition, morphology, and corrosion resistance of the anodized coating were analyzed. The anodized film was composed of MgO, Mg{sub 2}SiO{sub 4}, and Mg{sub 2}O{sub 7}P{sub 2}. Themorphology of the film showed a inappropriately dense structure and low porosity in the anodized layers. It is found that low voltage Plasma Electrolytic Oxidation in cooperation with phosphating treatment can provide good corrosion protection for the AZ31B magnesium alloy.

  1. Evaluation of the effectiveness of neurofeedback in the reduction of Posttraumatic stress disorder (PTSD in a patient following high-voltage electric shock with the use of ERPs

    Directory of Open Access Journals (Sweden)

    Anna Chrapusta

    2015-09-01

    Chronic PTSD developed within the patient as a result of a high-voltage electric burn. The application of a method of therapy (neurofeedback resulted in the withdrawal of the syndrome symptoms. ERPs in a GO/NOGO task can be used to plan neurofeedback and in the assessment of functional brain changes induced by neurotherapeutic programmes. Funds Collection: Private sources.

  2. Voltage regulation of the Y-source boost DC-DC converter considering effects of leakage inductances based on cascaded sliding-mode control

    DEFF Research Database (Denmark)

    Ahmadzadeh, Soheil; Markadeh, Gholamreza Arab; Blaabjerg, Frede

    2017-01-01

    In this study, a sliding mode-based controller is designed for regulating the output voltage of a high step-up DC-DC converter with three coupled inductors called Y-source impedance network. As Y-source converter can provide a very high boost at a lower shoot-through duty cycle of the switch...

  3. Capillary condensation and quantum vacuum effects on the pull-in voltage of electrostatic switches with self-affine rough plates

    NARCIS (Netherlands)

    Palasantzas, George

    2006-01-01

    In this work, we study the influence of capillary forces in combination with electrostatic and quantum vacuum generated forces on the pull-in voltage of microswitches having self-affine rough surfaces. This type of roughness is described by the rms roughness amplitude w, the in-plane correlation

  4. Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

    2004-01-01

    Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

  5. SU-G-IeP2-12: The Effect of Iterative Reconstruction and CT Tube Voltage On Hounsfield Unit Values of Iodinated Contrast

    Energy Technology Data Exchange (ETDEWEB)

    Ogden, K; Greene-Donnelly, K; Vallabhaneni, D; Scalzetti, E [SUNY Upstate Medical University, Syracuse, New York (United States)

    2016-06-15

    Purpose: To investigate the effects of changing iterative reconstruction strength and tube voltage on Hounsfield Unit (HU) values of varying concentrations of Iodinated contrast medium in a phantom. Method: Iodinated contrast (Omnipaque 300, GE Healthcare, Princeton NJ) was diluted with distilled water to concentrations of 0.6, 0.9, 1.8, 3.6, 7.2, and 10.8 mg/mL of Iodine. The solutions were scanned in a patient equivalent water phantom on two MDCT scanners: VCT 64 slice (GE Medical Systems, Waukesha, WI) and an Aquilion One 320 slice scanner (Toshiba America Medical Systems, Tustin CA). The phantom was scanned at 80, 100, 120, 140 kV using 400, 255, 180, and 130 mAs, respectively, for the VCT scanner, and 80, 100, 120, and 135 kV using 400, 250, 200, and 150 mAs, respectively, on the Aquilion One. Images were reconstructed at 2.5 mm (VCT) and 0.5 mm (Aquilion One). The VCT images were reconstructed using Advanced Statistical Iterative Reconstruction (ASIR) at 6 different strengths: 0%, 20%, 40%, 60%, 80%, and 100%. Aquilion One images were reconstructed using Adaptive Iterative Dose Reduction (AIDR) at 4 strengths: no AIDR, Weak AIDR, Standard AIDR, and Strong AIDR. Regions of interest (ROIs) were drawn on the images to measure the HU values and standard deviations of the diluted contrast. Second order polynomials were used to fit the HU values as a function of Iodine concentration. Results: For both scanners, there was no significant effect of changing the iterative reconstruction strength. The polynomial fits yielded goodness-of-fit (R2) values averaging 0.997. Conclusion: Changing the strength of the iterative reconstruction has no significant effect on the HU values of Iodinated contrast in a tissue-equivalent phantom. Fit values of HU vs Iodine concentration are useful in quantitative imaging protocols such as the determination of cardiac output from time-density curves in the main pulmonary artery.

  6. Three-level boost converter with zero voltage transition

    Directory of Open Access Journals (Sweden)

    Kuo-Ing Hwu

    2017-06-01

    Full Text Available As compared with the traditional boost converter, the three-level boost converter possesses several advantages, such as lower switch voltage stresses and lower inductor current ripple. To improve the efficiency, this paper proposes a zero voltage transition (ZVT three-level boost converter. With the proposed ZVT circuit, the switches can achieve soft switching. Moreover, by using the voltage balance control, the output voltage can be equally across the output capacitors. In this study, the effectiveness of the proposed topology is verified by the experimental results based on the field-programmable gate array control.

  7. The Effects on Absorbed Dose Distribution in Intraoral X-ray Imaging When Using Tube Voltages of 60 and 70 kV for Bitewing Imaging

    Directory of Open Access Journals (Sweden)

    Kristina Hellén-Halme

    2013-10-01

    Full Text Available Objectives: Efforts are made in radiographic examinations to obtain the best image quality with the lowest possible absorbed dose to the patient. In dental radiography, the absorbed dose to patients is very low, but exposures are relatively frequent. It has been suggested that frequent low-dose exposures can pose a risk for development of future cancer. It has previously been reported that there was no significant difference in the diagnostic accuracy of approximal carious lesions in radiographs obtained using tube voltages of 60 and 70 kV. The aim of this study was, therefore, to evaluate the patient dose resulting from exposures at these tube voltages to obtain intraoral bitewing radiographs.Material and Methods: The absorbed dose distributions resulting from two bitewing exposures were measured at tube voltages of 60 and 70 kV using Gafchromic® film and an anatomical head phantom. The dose was measured in the occlusal plane, and ± 50 mm cranially and caudally to evaluate the amount of scattered radiation. The same entrance dose to the phantom was used. The absorbed dose was expressed as the ratio of the maximal doses, the mean doses and the integral doses at tube voltages of 70 and 60 kV.Results: The patient receives approximately 40 - 50% higher (mean and integral absorbed dose when a tube voltage of 70 kV is used.Conclusions: The results of this study clearly indicate that 60 kV should be used for dental intraoral radiographic examinations for approximal caries detection.

  8. Computer controlled high voltage system

    Energy Technology Data Exchange (ETDEWEB)

    Kunov, B; Georgiev, G; Dimitrov, L [and others

    1996-12-31

    A multichannel computer controlled high-voltage power supply system is developed. The basic technical parameters of the system are: output voltage -100-3000 V, output current - 0-3 mA, maximum number of channels in one crate - 78. 3 refs.

  9. A Voltage Quality Detection Method

    DEFF Research Database (Denmark)

    Chen, Zhe; Wei, Mu

    2008-01-01

    This paper presents a voltage quality detection method based on a phase-locked loop (PLL) technique. The technique can detect the voltage magnitude and phase angle of each individual phase under both normal and fault power system conditions. The proposed method has the potential to evaluate various...

  10. Transient voltage oscillations in coils

    International Nuclear Information System (INIS)

    Chowdhuri, P.

    1985-01-01

    Magnet coils may be excited into internal voltage oscillations by transient voltages. Such oscillations may electrically stress the magnet's dielectric components to many times its normal stress. This may precipitate a dielectric failure, and the attendant prolonged loss of service and costly repair work. Therefore, it is important to know the natural frequencies of oscillations of a magnet during the design stage, and to determine whether the expected switching transient voltages can excite the magnet into high-voltage internal oscillations. The series capacitance of a winding significantly affects its natural frequencies. However, the series capacitance is difficult to calculate, because it may comprise complex capacitance network, consisting of intra- and inter-coil turn-to-turn capacitances of the coil sections. A method of calculating the series capacitance of a winding is proposed. This method is rigorous but simple to execute. The time-varying transient voltages along the winding are also calculated

  11. Comparison CCEM-K8 of DC voltage ratio: results

    CSIR Research Space (South Africa)

    Marullo-Reedtz, G

    2003-04-01

    Full Text Available , he has been with VNIIM where he has been involved in inves- tigation and development of electrical standards of dc voltage and dc current, using quantum effects in LT- and HT-superconductors and ratio voltage mea- surement up to 1000 V. Ronald...

  12. The influence of the electrical asymmetry effect on deposition uniformity of thin silicon film

    Energy Technology Data Exchange (ETDEWEB)

    Hrunski, D., E-mail: Dzmitry.Hrunski@leyboldoptics.com; Janssen, A.; Fritz, T.; Hegemann, T.; Clark, C.; Schreiber, U.; Grabosch, G.

    2013-04-01

    The deposition of amorphous and microcrystalline silicon is an important step in the production of thin silicon film solar panels. Deposition rate, layer uniformity and material quality are key attributes for achieving high efficiency in such panels. Due to the multilayer structure of tandem solar cells (more than 6 thin silicon layers), it is becoming increasingly important to improve the uniformity of deposition without sacrificing deposition rate and material quality. This paper reports the results of an investigation into the influence of the electrical asymmetry effect (EAE) on the uniformity of deposited layers. 13.56 MHz + 27.12 MHz excitation frequencies were used for thin silicon film deposition in a Gen5 reactor (1100 × 1400 mm). To change the plasma properties, the DC self bias voltage on the RF electrode was varied by adjustment of the phase angle between the two frequencies applied. It was found that the layers deposited by EAE method have better uniformity than layers deposited in single frequency 27.12 MHz discharge. The EAE provides additional opportunities for improvement of uniformity, deposition rate and material quality. - Highlights: ► The electrical asymmetry effect technique tested for thin silicon film deposition ► Bias voltage has an influence on film uniformity. ► Minimized the deterioration of layer uniformity while increasing discharge frequency.

  13. The effect of the variable frequency drive of the CNC roll grinding machine on the operation of other devices in low-voltage electrical installation

    Directory of Open Access Journals (Sweden)

    Simić Ninoslav

    2016-01-01

    Full Text Available This paper presents one of the observations that have been collected during the years of testing of electrical installations. A typical case from industrial plant in which are installed loads with variable frequency regulation is analyzed. We propose a simple way by measuring the frequency of the voltage in the objects, to establish the existence of possible irregularities in the operation of the individual units and analyze the influence of the current and voltage signal shape of one load to the work of other loads in the plant. The need for verification of electrical installations immediately upon receipt and installation of electrical equipment is emphasized and the use of the latest standards in the design and selection of equipment, in order to avoid unplanned expenses is recommended.

  14. Optically-powered Voltage-supply-device for Effective Utilization of Optical Energy in the Fiber-To-The-Home Network

    Science.gov (United States)

    Fukano, Hideki; Shinagawa, Takeshi; Tsuruta, Kenji

    An optically powered device with using InGaAs-Photodiode has been developed. This study aims to harvest light energy (2.8∼500μW) from the FTTH (Fiber To The Home) network and to utilize it for operating remote sensors without external energy sources. First, we designed and evaluated the characteristics of the booster circuit and confirmed that it could boost an input voltage of 0.3 V to 3.0 V. Next, we also evaluated the characteristics of InGaAs photodiode and confirmed that it can output a voltage over 0.3 V at 10-μW input light. We demonstrate that a ready-made sensor can be operated with an input optical power as low as 10 μW.

  15. Studying the effect of over-modulation on the output voltage of three-phase single-stage grid-connected boost inverter

    Directory of Open Access Journals (Sweden)

    A. Abbas Elserougi

    2013-09-01

    Full Text Available Voltage boosting is very essential issue in renewable-energy fed applications. The classical two-stage power conversion process is typically used to interface the renewable energy sources to the grid. For better efficiency, single-stage inverters are recommended. In this paper, the performance of single-stage three-phase grid-connected boost inverter is investigated when its gain is extended by employing over-modulation technique. Using of over-modulation is compared with the employment of third order harmonic injection. The latter method can increase the inverter gain by 15% without distorting the inverter output voltage. The performance of extended gain grid-connected boost inverter is also tested during normal operation as well as in the presence of grid side disturbances. Simulation and experimental results are satisfactory.

  16. Separating inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wenxu, E-mail: xwzhang@uestc.edu.cn; Peng, Bin; Han, Fangbin; Wang, Qiuru; Zhang, Wanli [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Soh, Wee Tee; Ong, Chong Kim [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore)

    2016-03-07

    We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from the spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, the inversion of the spin injection direction changes the ISHE voltage signal, while the SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range and has the flexibility of sample preparation.

  17. Effect of electric field in the characterization of pultruded GFRP boron-free composite insulator for the extra high voltage by the ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Fujiwara, Hissae; Silva Junior, Edmilson Jose; Shinohara, Armando Hideki [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil); Xavier, Gustavo Jose Vasconcelos [CHESF, Recife, PE (Brazil); Costa, Edson Guedes [Universidade Federal de Campina Grande (UFCG), PB (Brazil); Lott Neto, Henrique Batista Duffles Teixeira; Britto, Paulo Roberto Ranzan; Fontan, Marcio A.B. [Sistema de Transmissao do Nordeste S.A., Recife, PE (Brazil)

    2016-07-01

    Full text: The pultruded boron-free glass fiber reinforced polymer (GFRP) composite has been widely used material for the electrical insulators in the high, extra and ultra high voltage overhead lines worldwide. In terms of design, the composite insulator has a highly complex geometry and large size. Aging of materials begin as soon as the insulators start their operation due to the strong electric field, mechanical load due to the weight of conductor cables, environment, corona discharge, generation of acids, and as a result, GFRP can fail mechanically by the stress corrosion crack (SCC) and electrical breakdown known as flashover. In order to mitigate the mechanical and electrical failures, the insulators in the field are frequently monitored by visual inspection, infrared thermography, UV detection, variation of measurement of distribution of electric field variation. However, new technologies for characterization and inspection of the composite insulator in the field are required for reliable operation. Imaging characterization using ionizing radiation (X-ray or g-ray) is an interesting technique, however, it can reduce drastically breakdown voltage due to the Townsend discharge, which free electrons are accelerated by an electric field, collide with gas molecules of air, and free additional electrons resulting in an avalanche multiplication that allows an electrical conduction through the air. In this study, in order to evaluate the potential application of ionization radiation for characterization of composite insulator under electric field, testing were conducted in high voltage laboratory by applying voltages up to 640 kV and varying radiation area of the composite insulator. As a result, even though there was an occurrence of flame on Imaging Plate (IP) detector case when it was located near the phase, corona discharge, but no breakdown discharge (flashover) occurred and high quality imaging of radiography could be obtained when X-ray source was employed

  18. Investigation of the Effects of Cathode Flow Fraction and Position on the Performance and Operation of the High Voltage Hall Accelerator

    Science.gov (United States)

    Kamhawi, Hani; Huang, Wensheng; Haag, Thomas

    2014-01-01

    The National Aeronautics and Space Administration (NASA) Science Mission Directorate In- Space Propulsion Technology office is sponsoring NASA Glenn Research Center (GRC) to develop a 4 kW-class Hall thruster propulsion system for implementation in NASA science missions. Tests were performed within NASA GRC Vacuum Facility 5 at background pressure levels that were six times lower than what has previously been attained in other vacuum facilities. A study was conducted to assess the impact of varying the cathode-to-anode flow fraction and cathode position on the performance and operational characteristics of the High Voltage Hall Accelerator (HiVHAc) thruster. In addition, the impact of injecting additional xenon propellant in the vicinity of the cathode was also assessed. Cathode-to-anode flow fraction sensitivity tests were performed for power levels between 1.0 and 3.9 kW. It was found that varying the cathode flow fraction from 5 to approximately 10% of the anode flow resulted in the cathode-to-ground voltage becoming more positive. For an operating condition of 3.8 kW and 500 V, varying the cathode position from a distance of closest approach to 600 mm away did not result in any substantial variation in thrust but resulted in the cathode-to-ground changing from -17 to -4 V. The change in the cathode-to-ground voltage along with visual observations indicated a change in how the cathode plume was coupling to the thruster discharge. Finally, the injection of secondary xenon flow in the vicinity of the cathode had an impact similar to increasing the cathode-to-anode flow fraction, where the cathode-to-ground voltage became more positive and discharge current and thrust increased slightly. Future tests of the HiVHAc thruster are planned with a centrally mounted cathode in order to further assess the impact of cathode position on thruster performance.

  19. Effect of annealing on the second harmonic amplitude of Giant Magneto-Impedance (GMI) voltage of a Co-Fe-Si-B amorphous wire

    Energy Technology Data Exchange (ETDEWEB)

    Pal, S.K. [National Metallurgical Laboratory, Jamshedpur 831007 (India)], E-mail: skp@nmlindia.org; Panda, A.K.; Mitra, A. [National Metallurgical Laboratory, Jamshedpur 831007 (India)

    2008-02-15

    Second harmonic amplitude (V{sub 2f}) of Giant Magneto-Impedance (GMI) voltage of (Fe{sub 6}Co{sub 94}){sub 72.5}Si{sub 12.5}B{sub 15} amorphous wires has been studied systematically for as-cast and Joule-heated states. Joule heating was carried out at current densities (J) of 20-40 A/mm{sup 2} for a period of 1-300 min. The amplitude of the second harmonic voltage (V{sub 2f}) initially increased with J, attained maximum and then decreased. The maximum amplitude of V{sub 2f} was observed for the sample annealed at J=25 A/mm{sup 2} for 5 min. The second harmonic peak shifted towards the higher field side with the increase of annealing current density and annealing period (t{sub p}). Few-fold increase in the amplitude of the second harmonic voltage (V{sub 2f}) was observed due to the presence of a small dc bias current (I{sub b}) of amplitude 1 mA. The asymmetry in V{sub 2f} was also observed in a Joule-heated sample. The observed asymmetry has been correlated with the bias field generated between the surface crystallized layer and the amorphous core. A small bias current of amplitude of 1 mA was applied along the direction of the applied field to minimize the asymmetry.

  20. Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current-voltage and impedance spectroscopy

    Science.gov (United States)

    Rahman Khan, Motiur; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Menon, R.

    2017-03-01

    We report on the analysis of temperature-dependent current-voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current-voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  1016 cm-3 and 8.6  ×  1015 cm-3) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance-frequency data for various devices can not be explained using the parallel resistance-capacitance (RC) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current-voltage characteristics.

  1. Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current–voltage and impedance spectroscopy

    International Nuclear Information System (INIS)

    Khan, Motiur Rahman; Koteswara Rao, K S R; Menon, R; Anjaneyulu, P

    2017-01-01

    We report on the analysis of temperature-dependent current–voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current–voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  10 16 cm −3 and 8.6  ×  10 15 cm −3 ) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance–frequency data for various devices can not be explained using the parallel resistance–capacitance ( RC ) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current–voltage characteristics. (paper)

  2. A quantitative and comparative study of the effects of a synthetic ciguatoxin CTX3C on the kinetic properties of voltage-dependent sodium channels

    Science.gov (United States)

    Yamaoka, Kaoru; Inoue, Masayuki; Miyahara, Hidemichi; Miyazaki, Keisuke; Hirama, Masahiro

    2004-01-01

    Ciguatoxins (CTXs) are known to bind to receptor site 5 of the voltage-dependent Na channel, but the toxin's physiological effects are poorly understood. In this study, we investigated the effects of a ciguatoxin congener (CTX3C) on three different Na-channel isoforms, rNav1.2, rNav1.4, and rNav1.5, which were transiently expressed in HEK293 cells. The toxin (1.0 μmol l−1) shifted the activation potential (V1/2 of activation curve) in the negative direction by 4–9 mV and increased the slope factor (k) from 8 mV to between 9 and 12 mV (indicative of decreased steepness of the activation curve), thereby resulting in a hyperpolarizing shift of the threshold potential by 30 mV for all Na channel isoforms. The toxin (1.0 μmol l−1) significantly accelerated the time-to-peak current from 0.62 to 0.52 ms in isoform rNav1.2. Higher doses of the toxin (3–10 μmol l−1) additionally decreased time-to-peak current in rNav1.4 and rNav1.5. A toxin effect on decay of INa at −20 mV was either absent or marginal even at relatively high doses of CTX3C. The toxin (1 μmol l−1) shifted the inactivation potential (V1/2 of inactivation curve) in the negative direction by 15–18 mV in all isoforms. INa maxima of the I–V curve (at −20 mV) were suppressed by application of 1.0 μmol l−1 CTX3C to a similar extent (80–85% of the control) in all the three isoforms. Higher doses of CTX3C up to 10 μmol l−1 further suppressed INa to 61–72% of the control. Recovery from slow inactivation induced by a depolarizing prepulse of intermediate duration (500 ms) was dramatically delayed in the presence of 1.0 μmol l−1 CTX3C, as time constants describing the monoexponential recovery were increased from 38±8 to 588±151 ms (n=5), 53±6 to 338±85 ms (n=4), and 23±3 to 232±117 ms (n=3) in rNav1.2, rNav1.4, and rNav1.5, respectively. CTX3C exerted multimodal effects on sodium channels, with simultaneous stimulatory and inhibitory aspects, probably due to the large

  3. Effect of Ca doping level on the laser-induced voltages in tilted La{sub 1-x}Ca{sub x}MnO{sub 3} (0.1 ≤ x ≤ 0.7) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Ji; Zhang, Hui; Chen, Qingming; Liu, Xiang [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); Theingi, Mya [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); University of Yangon, Department of Chemistry, Yangon (Myanmar)

    2014-03-15

    Tilted La{sub 1-x}Ca{sub x}MnO{sub 3} (0.1 ≤ x ≤ 0.7) thin films have been grown on vicinal cut LaAlO{sub 3} (100) substrate by pulsed laser deposition. The laser-induced voltage effect was studied at room temperature with the KrF excimer laser using as the thermal source. The relationships between Ca doping level and voltage signal, response time and anisotropy Seebeck coefficient were established. The voltage signal and anisotropy Seebeck coefficient increase at first with increasing Ca doping level, reach a maximum at the same Ca content around x = 0.5, and then decrease. The respond time decreases with the Ca concentration increasing, and changes very little after x = 0.5. The figure of merit F{sub m} was also the largest at this doping level, indicating a potential good performance of the photodetector devices. The variation of intrinsic structural and transport anisotropy induced by the change of Ca concentration has been proposed to account for the different LIV effects observed in LCMO thin films. (orig.)

  4. Direct model-based predictive control scheme without cost function for voltage source inverters with reduced common-mode voltage

    Science.gov (United States)

    Kim, Jae-Chang; Moon, Sung-Ki; Kwak, Sangshin

    2018-04-01

    This paper presents a direct model-based predictive control scheme for voltage source inverters (VSIs) with reduced common-mode voltages (CMVs). The developed method directly finds optimal vectors without using repetitive calculation of a cost function. To adjust output currents with the CMVs in the range of -Vdc/6 to +Vdc/6, the developed method uses voltage vectors, as finite control resources, excluding zero voltage vectors which produce the CMVs in the VSI within ±Vdc/2. In a model-based predictive control (MPC), not using zero voltage vectors increases the output current ripples and the current errors. To alleviate these problems, the developed method uses two non-zero voltage vectors in one sampling step. In addition, the voltage vectors scheduled to be used are directly selected at every sampling step once the developed method calculates the future reference voltage vector, saving the efforts of repeatedly calculating the cost function. And the two non-zero voltage vectors are optimally allocated to make the output current approach the reference current as close as possible. Thus, low CMV, rapid current-following capability and sufficient output current ripple performance are attained by the developed method. The results of a simulation and an experiment verify the effectiveness of the developed method.

  5. LOFT voltage insertion calibaration program

    International Nuclear Information System (INIS)

    Tillitt, D.N.; Miyasaki, F.S.

    1975-08-01

    The Loss-of-Fluid Test (LOFT) Facility is an experimental facility built around a ''scaled'' version of a large pressurized water reactor (LPWR). Part of this facility is the Data Acquisition and Visual Display System (DAVDS) as defined by the LOFT System Design Document SDD 1.4.2C. The DAVDS has a 702 data channel recording capability of which 548 are recorded digitally. The DAVDS also contains a Voltage Insertion Calibration Subsystem used to inject precise and known voltage steps into the recording systems. The computer program that controls the Voltage Insertion Calibration Subsystem is presented. 7 references. (auth)

  6. Power-MOSFET Voltage Regulator

    Science.gov (United States)

    Miller, W. N.; Gray, O. E.

    1982-01-01

    Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

  7. CMOS-compatible high-voltage integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Parpia, Z

    1988-01-01

    Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

  8. Voltage-gated calcium flux mediates Escherichia coli mechanosensation.

    Science.gov (United States)

    Bruni, Giancarlo N; Weekley, R Andrew; Dodd, Benjamin J T; Kralj, Joel M

    2017-08-29

    Electrically excitable cells harness voltage-coupled calcium influx to transmit intracellular signals, typically studied in neurons and cardiomyocytes. Despite intense study in higher organisms, investigations of voltage and calcium signaling in bacteria have lagged due to their small size and a lack of sensitive tools. Only recently were bacteria shown to modulate their membrane potential on the timescale of seconds, and little is known about the downstream effects from this modulation. In this paper, we report on the effects of electrophysiology in individual bacteria. A genetically encoded calcium sensor expressed in Escherichia coli revealed calcium transients in single cells. A fusion sensor that simultaneously reports voltage and calcium indicated that calcium influx is induced by voltage depolarizations, similar to metazoan action potentials. Cytoplasmic calcium levels and transients increased upon mechanical stimulation with a hydrogel, and single cells altered protein concentrations dependent on the mechanical environment. Blocking voltage and calcium flux altered mechanically induced changes in protein concentration, while inducing calcium flux reproduced these changes. Thus, voltage and calcium relay a bacterial sense of touch and alter cellular lifestyle. Although the calcium effectors remain unknown, these data open a host of new questions about E. coli , including the identity of the underlying molecular players, as well as other signals conveyed by voltage and calcium. These data also provide evidence that dynamic voltage and calcium exists as a signaling modality in the oldest domain of life, and therefore studying electrophysiology beyond canonical electrically excitable cells could yield exciting new findings.

  9. Five-Level Active-Neutral-Point-Clamped DC/DC Converter for Medium-Voltage DC Grids

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Chen, Zhe

    2017-01-01

    This paper proposes a five-level active-neutralpoint- clamped (5L-ANPC) dc/dc converter for applications in medium voltage dc (MVDC) grids. A modulation strategy is proposed for the 5L-ANPC dc/dc converter to generate multilevel voltage waveforms, which can effectively reduce voltage change rate dv...... effectively eliminate high voltage leaps caused by the dead time effect. In addition, a capacitor voltage control strategy is proposed for the 5L-ANPC dc/dc converter to ensure the balanced flying capacitor voltage and desired five-level voltage waveforms. Finally, simulation and experimental studies...

  10. Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qing, E-mail: yangqing@cqu.edu.cn; Yu, Fei; Sima, Wenxia [State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Shapingba District, Chongqing, 400044 (China); Zahn, Markus [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2015-09-15

    Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticles can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.

  11. A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

    Science.gov (United States)

    Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

    2012-01-01

    This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters.

  12. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  13. High voltage distributions in RPCs

    International Nuclear Information System (INIS)

    Inoue, Y.; Muranishi, Y.; Nakamura, M.; Nakano, E.; Takahashi, T.; Teramoto, Y.

    1996-01-01

    High voltage distributions on the inner surfaces of RPCs electrodes were calculated by using a two-dimensional resistor network model. The calculated result shows that the surface resistivity of the electrodes should be high, compared to their volume resistivity, to get a uniform high voltage over the surface. Our model predicts that the rate capabilities of RPCs should be inversely proportional to the thickness of the electrodes if the ratio of surface-to-volume resistivity is low. (orig.)

  14. Automated tube voltage adaptation in head and neck computed tomography between 120 and 100 kV: effects on image quality and radiation dose.

    Science.gov (United States)

    May, Matthias S; Kramer, Manuel R; Eller, Achim; Wuest, Wolfgang; Scharf, Michael; Brand, Michael; Saake, Marc; Schmidt, Bernhard; Uder, Michael; Lell, Michael M

    2014-09-01

    Low tube voltage allows for computed tomography (CT) imaging with increased iodine contrast at reduced radiation dose. We sought to evaluate the image quality and potential dose reduction using a combination of attenuation based tube current modulation (TCM) and automated tube voltage adaptation (TVA) between 100 and 120 kV in CT of the head and neck. One hundred thirty consecutive patients with indication for head and neck CT were examined with a 128-slice system capable of TCM and TVA. Reference protocol was set at 120 kV. Tube voltage was reduced to 100 kV whenever proposed by automated analysis of the localizer. An additional small scan aligned to the jaw was performed at a fixed 120 kV setting. Image quality was assessed by two radiologists on a standardized Likert-scale and measurements of signal- (SNR) and contrast-to-noise ratio (CNR). Radiation dose was assessed as CTDIvol. Diagnostic image quality was excellent in both groups and did not differ significantly (p = 0.34). Image noise in the 100 kV data was increased and SNR decreased (17.8/9.6) in the jugular veins and the sternocleidomastoid muscle when compared to 120 kV (SNR 24.4/10.3), but not in fatty tissue and air. However, CNR did not differ statistically significant between 100 (23.5/14.4/9.4) and 120 kV data (24.2/15.3/8.6) while radiation dose was decreased by 7-8%. TVA between 100 and 120 kV in combination with TCM led to a radiation dose reduction compared to TCM alone, while keeping CNR constant though maintaining diagnostic image quality.

  15. Automated tube voltage adaptation in head and neck computed tomography between 120 and 100 kV: effects on image quality and radiation dose

    Energy Technology Data Exchange (ETDEWEB)

    May, Matthias S.; Uder, Michael; Lell, Michael M. [University Hospital Erlangen, Department of Radiology, Erlangen (Germany); University Erlangen, Imaging Science Institute, Erlangen (Germany); Kramer, Manuel R.; Eller, Achim; Wuest, Wolfgang; Scharf, Michael; Brand, Michael; Saake, Marc [University Hospital Erlangen, Department of Radiology, Erlangen (Germany); Schmidt, Bernhard [Siemens Healthcare, Erlangen (Germany)

    2014-09-15

    Low tube voltage allows for computed tomography (CT) imaging with increased iodine contrast at reduced radiation dose. We sought to evaluate the image quality and potential dose reduction using a combination of attenuation based tube current modulation (TCM) and automated tube voltage adaptation (TVA) between 100 and 120 kV in CT of the head and neck. One hundred thirty consecutive patients with indication for head and neck CT were examined with a 128-slice system capable of TCM and TVA. Reference protocol was set at 120 kV. Tube voltage was reduced to 100 kV whenever proposed by automated analysis of the localizer. An additional small scan aligned to the jaw was performed at a fixed 120 kV setting. Image quality was assessed by two radiologists on a standardized Likert-scale and measurements of signal- (SNR) and contrast-to-noise ratio (CNR). Radiation dose was assessed as CTDI{sub vol}. Diagnostic image quality was excellent in both groups and did not differ significantly (p = 0.34). Image noise in the 100 kV data was increased and SNR decreased (17.8/9.6) in the jugular veins and the sternocleidomastoid muscle when compared to 120 kV (SNR 24.4/10.3), but not in fatty tissue and air. However, CNR did not differ statistically significant between 100 (23.5/14.4/9.4) and 120 kV data (24.2/15.3/8.6) while radiation dose was decreased by 7-8 %. TVA between 100 and 120 kV in combination with TCM led to a radiation dose reduction compared to TCM alone, while keeping CNR constant though maintaining diagnostic image quality. (orig.)

  16. Macroeconomic Assessment of Voltage Sags

    Directory of Open Access Journals (Sweden)

    Sinan Küfeoğlu

    2016-12-01

    Full Text Available The electric power sector has changed dramatically since the 1980s. Electricity customers are now demanding uninterrupted and high quality service from both utilities and authorities. By becoming more and more dependent on the voltage sensitive electronic equipment, the industry sector is the one which is affected the most by voltage disturbances. Voltage sags are one of the most crucial problems for these customers. The utilities, on the other hand, conduct cost-benefit analyses before going through new investment projects. At this point, understanding the costs of voltage sags become imperative for planning purposes. The characteristics of electric power consumption and hence the susceptibility against voltage sags differ considerably among different industry subsectors. Therefore, a model that will address the estimation of worth of electric power reliability for a large number of customer groups is necessary. This paper introduces a macroeconomic model to calculate Customer Voltage Sag Costs (CVSCs for the industry sector customers. The proposed model makes use of analytical data such as value added, annual energy consumption, working hours, and average outage durations and provides a straightforward, credible, and easy to follow methodology for the estimation of CVSCs.

  17. A matter of quantum voltages

    Energy Technology Data Exchange (ETDEWEB)

    Sellner, Bernhard; Kathmann, Shawn M., E-mail: Shawn.Kathmann@pnnl.gov [Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. The variation of voltages in matter can be measured by experiment, however, modern supercomputers allow the calculation of accurate quantum voltages with spatial resolutions of bulk systems well beyond what can currently be measured provided a sufficient level of theory is employed. Of particular interest is the Mean Inner Potential (V{sub o}) – the spatial average of these quantum voltages referenced to the vacuum. Here we establish a protocol to reliably evaluate V{sub o} from quantum calculations. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of V{sub o} for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Certain aspects in this regard are highlighted making use of simple model systems/approximations. Furthermore, we predict V{sub o} as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms.

  18. Low-voltage organic field effect transistors with a 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene semiconductor layer.

    Science.gov (United States)

    Amin, Atefeh Y; Khassanov, Artoem; Reuter, Knud; Meyer-Friedrichsen, Timo; Halik, Marcus

    2012-10-10

    An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C(13)-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm(2)/(V·s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT π-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.

  19. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  20. High Bandwidth Zero Voltage Injection Method for Sensorless Control of PMSM

    DEFF Research Database (Denmark)

    Ge, Xie; Lu, Kaiyuan; Kumar, Dwivedi Sanjeet

    2014-01-01

    High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses to be inj......High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses...... in a fast current regulation performance. Injection of zero voltage also minimizes the inverter voltage error effects caused by the dead-time....

  1. Local Dynamic Reactive Power for Correction of System Voltage Problems

    Energy Technology Data Exchange (ETDEWEB)

    Kueck, John D [ORNL; Rizy, D Tom [ORNL; Li, Fangxing [ORNL; Xu, Yan [ORNL; Li, Huijuan [University of Tennessee, Knoxville (UTK); Adhikari, Sarina [ORNL; Irminger, Philip [ORNL

    2008-12-01

    Distribution systems are experiencing outages due to a phenomenon known as local voltage collapse. Local voltage collapse is occurring in part because modern air conditioner compressor motors are much more susceptible to stalling during a voltage dip than older motors. These motors can stall in less than 3 cycles (.05s) when a fault, such as on the sub-transmission system, causes voltage to sag to 70 to 60%. The reasons for this susceptibility are discussed in the report. During the local voltage collapse, voltages are depressed for a period of perhaps one or two minutes. There is a concern that these local events are interacting together over larger areas and may present a challenge to system reliability. An effective method of preventing local voltage collapse is the use of voltage regulation from Distributed Energy Resources (DER) that can supply or absorb reactive power. DER, when properly controlled, can provide a rapid correction to voltage dips and prevent motor stall. This report discusses the phenomenon and causes of local voltage collapse as well as the control methodology we have developed to counter voltage sag. The problem is growing because of the use of low inertia, high efficiency air conditioner (A/C) compressor motors and because the use of electric A/C is growing in use and becoming a larger percentage of system load. A method for local dynamic voltage regulation is discussed which uses reactive power injection or absorption from local DER. This method is independent, rapid, and will not interfere with conventional utility system voltage control. The results of simulations of this method are provided. The method has also been tested at the ORNL s Distributed Energy Communications and Control (DECC) Laboratory using our research inverter and synchronous condenser. These systems at the DECC Lab are interconnected to an actual distribution system, the ORNL distribution system, which is fed from TVA s 161kV sub-transmission backbone. The test results

  2. Triple Line-Voltage Cascaded VIENNA Converter Applied as the Medium-Voltage AC Drive

    Directory of Open Access Journals (Sweden)

    Jia Zou

    2018-04-01

    Full Text Available A novel rectifier based on a triple line-voltage cascaded VIENNA converter (LVC-VC was proposed. Compared to the conventional cascaded H-bridge converters, the switch voltage stress is lower, and the numbers of switches and dc capacitors are fewer under similar operating conditions in the proposed new multilevel converter. The modeling and control for the LVC-VC ware presented. Based on the analysis of the operation principle of the new converter, the power factor correction of the proposed converter was realized by employing a traditional one-cycle control strategy. The minimum average value and maximum harmonic components of the dc-link voltages of the three VIENNA rectifier modules ware calculated. Three VIENNA dc-link voltages were unbalanced under the unbalanced load conditions, so the zero sequence current was injected to the three inner currents for balancing three VIENNA dc-link voltages. Simulation and the results of the experiment verified the availability of the new proposed multilevel converter and the effectiveness of the corresponding control strategy applied.

  3. The effect of the shape of single, sub-ms voltage pulses on the rates of surface immobilization and hybridization of DNA

    International Nuclear Information System (INIS)

    Cabeca, R; Rodrigues, M; Chu, V; Conde, J P; Prazeres, D M F

    2009-01-01

    Electric fields generated by single square and sinusoidal voltage pulses with amplitudes below 2 V were used to assist the covalent immobilization of single-stranded, thiolated DNA probes, onto a chemically functionalized SiO 2 surface and to assist the specific hybridization of single-stranded DNA targets with immobilized complementary probes. The single-stranded immobilized DNA probes were either covalently immobilized (chemisorption) or electrostatically adsorbed (physisorption) to a chemically functionalized surface. Comparing the speed of electric field assisted immobilization and hybridization with the corresponding control reactions (without electric field), an increase of several orders of magnitude is observed, with the reaction timescaled down from 1 to 2 h to a range between 100 ns and 1 ms. The influence of the shape of the voltage pulse (square versus sinusoidal) and its duration were studied for both immobilization and hybridization reactions. The results show that pulsed electric fields are a useful tool to achieve temporal and spatial control of surface immobilization and hybridization reactions of DNA.

  4. Effect of applied voltage on the structural properties of SnO2 nanostuctures grown on indium-tin-oxide coated glass substrates.

    Science.gov (United States)

    Lee, Dea Uk; Yun, Dong Yeol; No, Young Soo; Hwang, Jun Ho; Lee, Chang Hun; Kim, Tae Whan

    2013-11-01

    SnO2 nanostuctures were formed on indium-tin-oxide (ITO)-coated glass substrates by using an electrochemical deposition (ECD) method. X-ray photoelectron spectroscopy (XPS) spectra showed the existence of elemental Sn and O in the samples, indicative of the formation of SnO2 materials. An XPS spectrum showing the O 1s peak at a binding energy of 531.5 eV indicated that the oxygen atoms were bonded to the SnO2. Field-emission scanning electron microscopy (FE-SEM) images showed that the samples formed by using the ECD method had SnO2 nanostructures with a size between 280 and 350 nm. FE-SEM images showed that the size of the SnO2 nanostructures formed at 65 degrees C for 30 min increased with decreasing applied voltage. X-ray diffraction (XRD) patterns showed that the SnO2 nanostrucures had tetragonal structures with cell parameters of a = 4.738 A and c = 3.187 A. XRD results showed that the peak intensity of the (110) plane increased with decreasing applied voltage, indicative of a preferencial orientation of the (110) plane.

  5. New High Voltage Interconnections with Islands in the Mediterranean Sea: Malta and Sicily. Analysis of the Effects on Renewable Energy Sources Integration and Benefits for the Electricity Market

    Directory of Open Access Journals (Sweden)

    Mariano Giuseppe Ippolito

    2018-04-01

    Full Text Available The present paper shows the benefits coming from the operation of the recent electrical high voltage (HV interconnections between Sicily, Malta and mainland Italy. These new interconnections allow zonal prices of electricity considerably lower than in the past, ensuring greater flexibility to the system and a better integration of Renewable Energy Sources (RES. After briefly illustrating the two high-voltage electrical systems (Sicily and Malta, and having provided a description of the interconnection cable with Malta and its protection devices, the authors hypothesized two modes of operation (Sicily-Malta system islanded or interconnected to the rest of Europe. For the first case (islanded some simulations are performed through the use of an electric network model realized in the Neplan® environment, and for the second case an analysis of one year real data was made. The results of the simulation, thanks to the use of a power flow tracing method, show that this new interconnection between the two islands (Sicily and Malta allows an important improvement in the integration and dispatching of the power generated by RES of the Sicilian territory, better operation of traditional Sicilian generation units, lower electricity zonal prices and a significant reduction in emissions from obsolete fuel oil thermal units located in Malta.

  6. Ion peak narrowing by applying additional AC voltage (ripple voltage) to FAIMS extractor electrode.

    Science.gov (United States)

    Pervukhin, Viktor V; Sheven, Dmitriy G

    2010-01-01

    The use of a non-uniform electric field in a high-field asymmetric waveform ion mobility spectrometry (FAIMS) analyzer increases sensitivity but decreases resolution. The application of an additional AC voltage to the extractor electrode ("ripple" voltage, U(ripple)) can overcome this effect, which decreases the FAIMS peak width. In this approach, the diffusion ion loss remains minimal in the non-uniform electric field in the cylindrical part of the device, and all ion losses under U(ripple) occur in a short portion of their path. Application of the ripple voltage to the extractor electrode is twice as efficient as the applying of U(ripple) along the total length of the device. 2010 American Society for Mass Spectrometry. Published by Elsevier Inc. All rights reserved.

  7. Characteristics of output voltage and current of integrated nanogenerators

    KAUST Repository

    Yang, Rusen; Qin, Yong; Li, Cheng; Dai, Liming; Wang, Zhong Lin

    2009-01-01

    three criteria: Schottky behavior test, switching-polarity tests, and linear superposition of current and voltage tests. The 11 tests can effectively rule out the system artifacts, whose sign does not change with the switching measurement polarity

  8. Mitigation of voltage sags in the distribution system with dynamic voltage restorer

    International Nuclear Information System (INIS)

    Viglas, D.; Belan, A.

    2012-01-01

    Dynamic voltage restorer is a custom power device that is used to improve voltage sags or swells in electrical distribution system. The components of the Dynamic Voltage Restorer consist of injection transformers, voltage source inverter, passive filters and energy storage. The main function of the Dynamic voltage restorer is used to inject three phase voltage in series and in synchronism with the grid voltages in order to compensate voltage disturbances. This article deals with mitigation of voltage sags caused by three-phase short circuit. Dynamic voltage restorer is modelled in MATLAB/Simulink. (Authors)

  9. Differential effect of T-type voltage-gated calcium channel disruption on renal plasma flow and glomerular filtration rate in vivo

    DEFF Research Database (Denmark)

    Thuesen, Anne D; Andersen, Henrik; Cardel, Majken

    2014-01-01

    Voltage-gated calcium channels (Cav) play an essential role in regulation of renal blood flow and GFR. Because T-type Cavs are differentially expressed in pre- and postglomerular vessels it was hypothesized that they impact renal blood flow and GFR differentially. The question was addressed by use...... of two T-type Cav knock-out mice strains. Continuous recordings of blood pressure and heart rate, and para-aminohippurate clearance (renal plasma flow) and inulin clearance (GFR) were performed in conscious, chronically catheterized, wild type and Cav 3.1-/- and Cav 3.2-/- mice. Contractility of afferent...... and efferent arterioles was determined in isolated perfused blood vessels. Efferent arterioles from Cav 3.2-/- mice constricted significantly more in response to a depolarization compared to Wt mice. GFR was increased in Cav 3.2-/- mice with no significant changes in renal plasma flow, heart rate and blood...

  10. The effect of post-processing treatments on inflection points in current–voltage curves of roll-to-roll processed polymer photovoltaics

    DEFF Research Database (Denmark)

    Lilliedal, Mathilde Raad; Medford, Andrew James; Vesterager Madsen, Morten

    2010-01-01

    Inflection point behaviour is often observed in the current–voltage (IV) curve of polymer solar cells. This phenomenon is examined in the context of flexible roll-to-roll (R2R) processed polymer solar cells in a large series of devices with a layer structure of: PET–ITO–ZnO–P3HT...... characterization of device interfaces was carried out in order to identify possible chemical processes that are related to photo-annealing. A possible mechanism based on ZnO photoconductivity, photooxidation and redistribution of oxygen inside the cell is proposed, and it is anticipated that the findings......:PCBM–PEDOT:PSS–Ag. The devices were manufactured using a combination of slot-die coating and screen printing; they were then encapsulated by lamination using a polymer based barrier material. All manufacturing steps were carried out in ambient air. The freshly prepared devices showed a consistent inflection point in the IV...

  11. Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions

    Directory of Open Access Journals (Sweden)

    Mykola O. Semenenko

    2016-01-01

    Full Text Available Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversion mainly due to reduction of internal stresses at the interfaces. Application of reactive ion etching technique removes the broken layer, reduces elastic strain in the wafer, decreases recombination of charge carriers in the bulk, and provides cell efficiency increase by up to ten times.

  12. Effect of temperature on current voltage characteristics in ZnO/CdS/CuGaSe2 single crystal solar cells

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.

    2005-03-01

    Current voltage characteristics of Zn O/CdS/CuGaSe 2 single crystal solar cells, which have gone through repetitive annealing treatment and have been measured at different values of temperature and illumination intensity, were analyzed using the two-diode equation. The analysis revealed that current transport in these cells is governed by two competing transport mechanisms relating strongly to interface states and that both mechanisms are thermally and light activated. These two mechanisms are interface recombination and tunneling enhanced interface recombination. The activation energy values of the saturation current density in both mechanisms were calculated from the temperature dependence of the parameters describing each of them. It was found that these values depend on temperature and illumination intensity. Furthermore, the behavior of the photovoltaic parameters could be explained relying on the results of the analysis. (Authors)

  13. Scaling of Supply Voltage in Design of Energy Saver FIR Filter on 28nm FPGA

    DEFF Research Database (Denmark)

    Pandey, Bishwajeet; Jain, Vishal; Sharma, Rashmi

    2017-01-01

    In this work, we are going to analyze the effect of main supply voltage, auxiliary supply voltage, local voltage of different power bank, and supply voltage in GTX transceiver and BRAM on power dissipation of our FIR design using Verilog during implementation on 28nm FPGA. We have also taken three.......33%, 86%, 90.67%, 65.33%, 52%, and 48.67% reduction in IO power dissipation of FIR Filter design on CSG324 package of Artix-7 FPGA family....

  14. SOGI-based capacitor voltage feedback active damping in LCL-filtered grid converters

    DEFF Research Database (Denmark)

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    The capacitor voltage feedback active damping control is an attractive way to suppress LCL-filter resonance especially for the systems where the capacitor voltage is used for grid synchronization, since no extra sensors are added. The derivative is the core of the capacitor voltage feedback active...... derivative is more suited for capacitor voltage feedback active damping control. Experimental results validate the effectiveness of the proposed method....

  15. Voltage current characteristics of type III superconductors

    International Nuclear Information System (INIS)

    Dorofejev, G.L.; Imenitov, A.B.; Klimenko, E.Y.

    1980-01-01

    An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb 3 Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T. (author)

  16. Voltage current characteristics of type III superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Dorofeiev, G L; Imenitov, A B; Klimenko, E Y [Gosudarstvennyi Komitet po Ispol' zovaniyu Atomnoi Ehnergii SSSR, Moscow. Inst. Atomnoi Ehnergii

    1980-06-01

    An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb/sub 3/Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T.

  17. Low-Energy Real-Time OS Using Voltage Scheduling Algorithm for Variable Voltage Processors

    OpenAIRE

    Okuma, Takanori; Yasuura, Hiroto

    2001-01-01

    This paper presents a real-time OS based on $ mu $ITRON using proposed voltage scheduling algorithm for variable voltage processors which can vary supply voltage dynamically. The proposed voltage scheduling algorithms assign voltage level for each task dynamically in order to minimize energy consumption under timing constraints. Using the presented real-time OS, running tasks with low supply voltage leads to drastic energy reduction. In addition, the presented voltage scheduling algorithm is ...

  18. Development of a New Cascade Voltage-Doubler for Voltage Multiplication

    OpenAIRE

    Toudeshki, Arash; Mariun, Norman; Hizam, Hashim; Abdul Wahab, Noor Izzri

    2014-01-01

    For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

  19. Design of shielded voltage divider for impulse voltage measurement

    International Nuclear Information System (INIS)

    Kato, Shohei; Kouno, Teruya; Maruyama, Yoshio; Kikuchi, Koji.

    1976-01-01

    The dividers used for the study of the insulation and electric discharge phenomena in high voltage equipments have the problems of the change of response characteristics owing to adjacent bodies and of induced noise. To improve the characteristics, the enclosed type divider shielded with metal has been investigated, and the divider of excellent response has been obtained by adopting the frequency-separating divider system, which is divided into two parts, resistance divider (lower frequency region) and capacitance divider (higher frequency region), for avoiding to degrade the response. Theoretical analysis was carried out in the cases that residual inductance can be neglected or can not be neglected in the small capacitance divider, and that the connecting wires are added. Next, the structure of the divider and the design of the electric field for the divider manufactured on the basis of the theory are described. The response characteristics were measured. The results show that 1 MV impulse voltage can be measured within the response time of 10 ns. Though this divider aims at the impulse voltage, the duration time of which is about that of standard lightning impulse, in view of the heat capacity because of the input resistance of 10.5 kΩ, it is expected that the divider can be applied to the voltage of longer duration time by increasing the input resistance in future. (Wakatsuki, Y.)

  20. Unbalanced Voltage Compensation in Low Voltage Residential AC Grids

    DEFF Research Database (Denmark)

    Trintis, Ionut; Douglass, Philip; Munk-Nielsen, Stig

    2016-01-01

    This paper describes the design and test of a control algorithm for active front-end rectifiers that draw power from a residential AC grid to feed heat pump loads. The control algorithm is able to control the phase to neutral or phase to phase RMS voltages at the point of common coupling...